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Sample records for metal-insulator phase transition

  1. Chiral phase transition in lattice QCD as a metal-insulator transition

    SciTech Connect

    Garcia-Garcia, Antonio M.; Osborn, James C.

    2007-02-01

    We investigate the lattice QCD Dirac operator with staggered fermions at temperatures around the chiral phase transition. We present evidence of a metal-insulator transition in the low lying modes of the Dirac operator around the same temperature as the chiral phase transition. This strongly suggests the phenomenon of Anderson localization drives the QCD vacuum to the chirally symmetric phase in a way similar to a metal-insulator transition in a disordered conductor. We also discuss how Anderson localization affects the usual phenomenological treatment of phase transitions a la Ginzburg-Landau.

  2. Phase coexistence and metal-insulator transition in few-layer phosphorene: a computational study.

    PubMed

    Guan, Jie; Zhu, Zhen; Tománek, David

    2014-07-25

    Based on ab initio density functional calculations, we propose γ-P and δ-P as two additional stable structural phases of layered phosphorus besides the layered α-P (black) and β-P (blue) phosphorus allotropes. Monolayers of some of these allotropes have a wide band gap, whereas others, including γ-P, show a metal-insulator transition caused by in-layer strain or changing the number of layers. An unforeseen benefit is the possibility to connect different structural phases at no energy cost. This becomes particularly valuable in assembling heterostructures with well-defined metallic and semiconducting regions in one contiguous layer.

  3. Approximating metal-insulator transitions

    NASA Astrophysics Data System (ADS)

    Danieli, Carlo; Rayanov, Kristian; Pavlov, Boris; Martin, Gaven; Flach, Sergej

    2015-12-01

    We consider quantum wave propagation in one-dimensional quasiperiodic lattices. We propose an iterative construction of quasiperiodic potentials from sequences of potentials with increasing spatial period. At each finite iteration step, the eigenstates reflect the properties of the limiting quasiperiodic potential properties up to a controlled maximum system size. We then observe approximate Metal-Insulator Transitions (MIT) at the finite iteration steps. We also report evidence on mobility edges, which are at variance to the celebrated Aubry-André model. The dynamics near the MIT shows a critical slowing down of the ballistic group velocity in the metallic phase, similar to the divergence of the localization length in the insulating phase.

  4. The metal-insulator phase transition in the strained GdBiTe3

    NASA Astrophysics Data System (ADS)

    Van Quang, Tran; Kim, Miyoung

    2013-05-01

    In this work, we investigated the electronic structures and magnetic properties of the GdBiTe3 alloy employing a first-principles all-electron density-functional approach, aiming to understand the magnetic phase stability and electronic structure dependences on the exchange correlation potential and the strain. The results show that the ferromagnetic phase is energetically more stable over the paramagnetic phase and the metal-insulator phase transition occurs upon the lattice distortion via the strain along the perpendicular c direction, which is not influenced by the strength of correlation energy introduced to describe the localized f orbitals. Thermoelectric transport properties are also investigated to reveal that the compressive strain markedly enhances the Seebeck coefficient, which is reduced in comparison with the Bismuth telluride due to the Gd doping.

  5. Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

    PubMed

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-01-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.

  6. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

    PubMed Central

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-01-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows. PMID:27033314

  7. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

    NASA Astrophysics Data System (ADS)

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-04-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.

  8. Phase coexistence and Mott metal-insulator transition in the doped Hubbard-Holstein model

    NASA Astrophysics Data System (ADS)

    Moradi Kurdestany, Jamshid; Satpathy, Sashi

    2015-03-01

    Motivated by recent progress in the understanding of the Mott insulators away from half filling [?], often observed in the oxide materials, we study the role of the electron-lattice interaction vis-à-vis the electron correlations by studying the one-band Hubbard-Holstein model using the Gutzwiller variational method. Our theory predicts phase separation for sufficiently strong electron-lattice interaction, which however is frustrated in the solid due to the long-range Coulomb interaction of the dopant atoms, resulting in puddles of metallic phases embedded in the insulating matrix. Metallic state occurs when the volume fraction of the metallic phase exceeds the percolation threshold, as the dopant concentration is increased. Connection is made with the experimentally observed metal-insulator transition in the complex oxides.

  9. Composition induced metal-insulator quantum phase transition in the Heusler type Fe2VAl

    NASA Astrophysics Data System (ADS)

    Naka, Takashi; Nikitin, Artem M.; Pan, Yu; de Visser, Anne; Nakane, Takayuki; Ishikawa, Fumihiro; Yamada, Yuh; Imai, Motoharu; Matsushita, Akiyuki

    2016-07-01

    We report the magnetism and transport properties of the Heusler compound Fe2+x V1-x Al at  -0.10  ⩽  x  ⩽  0.20 under pressure and a magnetic field. A metal-insulator quantum phase transition occurred at x  ≈  -0.05. Application of pressure or a magnetic field facilitated the emergence of finite zero-temperature conductivity σ 0 around the critical point, which scaled approximately according to the power law (P  -  P c ) γ . At x  ⩽  -0.05, a localized paramagnetic spin appeared, whereas above the ferromagnetic quantum critical point at x  ≈  0.05, itinerant ferromagnetism was established. At the quantum critical points at x  =  -0.05 and 0.05, the resistivity and specific heat exhibited singularities characteristic of a Griffiths phase appearing as an inhomogeneous electronic state.

  10. Composition induced metal-insulator quantum phase transition in the Heusler type Fe2VAl.

    PubMed

    Naka, Takashi; Nikitin, Artem M; Pan, Yu; de Visser, Anne; Nakane, Takayuki; Ishikawa, Fumihiro; Yamada, Yuh; Imai, Motoharu; Matsushita, Akiyuki

    2016-07-20

    We report the magnetism and transport properties of the Heusler compound Fe2+x V1-x Al at  -0.10  ⩽  x  ⩽  0.20 under pressure and a magnetic field. A metal-insulator quantum phase transition occurred at x  ≈  -0.05. Application of pressure or a magnetic field facilitated the emergence of finite zero-temperature conductivity σ 0 around the critical point, which scaled approximately according to the power law (P  -  P c ) (γ) . At x  ⩽  -0.05, a localized paramagnetic spin appeared, whereas above the ferromagnetic quantum critical point at x  ≈  0.05, itinerant ferromagnetism was established. At the quantum critical points at x  =  -0.05 and 0.05, the resistivity and specific heat exhibited singularities characteristic of a Griffiths phase appearing as an inhomogeneous electronic state.

  11. Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

    NASA Astrophysics Data System (ADS)

    Yang, Mengmeng; Yang, Yuanjun; Bin Hong; Wang, Liangxin; Hu, Kai; Dong, Yongqi; Xu, Han; Huang, Haoliang; Zhao, Jiangtao; Chen, Haiping; Song, Li; Ju, Huanxin; Zhu, Junfa; Bao, Jun; Li, Xiaoguang; Gu, Yueliang; Yang, Tieying; Gao, Xingyu; Luo, Zhenlin; Gao, Chen

    2016-03-01

    Mechanism of metal-insulator transition (MIT) in strained VO2 thin films is very complicated and incompletely understood despite three scenarios with potential explanations including electronic correlation (Mott mechanism), structural transformation (Peierls theory) and collaborative Mott-Peierls transition. Herein, we have decoupled coactions of structural and electronic phase transitions across the MIT by implementing epitaxial strain on 13-nm-thick (001)-VO2 films in comparison to thicker films. The structural evolution during MIT characterized by temperature-dependent synchrotron radiation high-resolution X-ray diffraction reciprocal space mapping and Raman spectroscopy suggested that the structural phase transition in the temperature range of vicinity of the MIT is suppressed by epitaxial strain. Furthermore, temperature-dependent Ultraviolet Photoelectron Spectroscopy (UPS) revealed the changes in electron occupancy near the Fermi energy EF of V 3d orbital, implying that the electronic transition triggers the MIT in the strained films. Thus the MIT in the bi-axially strained VO2 thin films should be only driven by electronic transition without assistance of structural phase transition. Density functional theoretical calculations further confirmed that the tetragonal phase across the MIT can be both in insulating and metallic states in the strained (001)-VO2/TiO2 thin films. This work offers a better understanding of the mechanism of MIT in the strained VO2 films.

  12. Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

    PubMed Central

    Yang, Mengmeng; Yang, Yuanjun; Bin Hong; Wang, Liangxin; Hu, Kai; Dong, Yongqi; Xu, Han; Huang, Haoliang; Zhao, Jiangtao; Chen, Haiping; Song, Li; Ju, Huanxin; Zhu, Junfa; Bao, Jun; Li, Xiaoguang; Gu, Yueliang; Yang, Tieying; Gao, Xingyu; Luo, Zhenlin; Gao, Chen

    2016-01-01

    Mechanism of metal-insulator transition (MIT) in strained VO2 thin films is very complicated and incompletely understood despite three scenarios with potential explanations including electronic correlation (Mott mechanism), structural transformation (Peierls theory) and collaborative Mott-Peierls transition. Herein, we have decoupled coactions of structural and electronic phase transitions across the MIT by implementing epitaxial strain on 13-nm-thick (001)-VO2 films in comparison to thicker films. The structural evolution during MIT characterized by temperature-dependent synchrotron radiation high-resolution X-ray diffraction reciprocal space mapping and Raman spectroscopy suggested that the structural phase transition in the temperature range of vicinity of the MIT is suppressed by epitaxial strain. Furthermore, temperature-dependent Ultraviolet Photoelectron Spectroscopy (UPS) revealed the changes in electron occupancy near the Fermi energy EF of V 3d orbital, implying that the electronic transition triggers the MIT in the strained films. Thus the MIT in the bi-axially strained VO2 thin films should be only driven by electronic transition without assistance of structural phase transition. Density functional theoretical calculations further confirmed that the tetragonal phase across the MIT can be both in insulating and metallic states in the strained (001)-VO2/TiO2 thin films. This work offers a better understanding of the mechanism of MIT in the strained VO2 films. PMID:26975328

  13. High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation

    PubMed Central

    Yamin, Tony; Strelniker, Yakov M.; Sharoni, Amos

    2016-01-01

    Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of microscopic understanding of mechanisms involved in these transitions. A prototypical example is VO2, where previous studies indicated that the MIT resistance change correlate with changes in carrier density and mobility. We studied the MIT using Hall measurements with unprecedented resolution and accuracy, simultaneously with resistance measurements. Contrast to prior reports, we find that the MIT is not correlated with a change in mobility, but rather, is a macroscopic manifestation of the spatial phase separation which accompanies the MIT. Our results demonstrate that, surprisingly, properties of the nano-scale spatially-separated metallic and semiconducting domains actually retain their bulk properties. This study highlights the importance of taking into account local fluctuations and correlations when interpreting transport measurements in highly correlated systems. PMID:26783076

  14. High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation

    NASA Astrophysics Data System (ADS)

    Yamin, Tony; Strelniker, Yakov M.; Sharoni, Amos

    2016-01-01

    Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of microscopic understanding of mechanisms involved in these transitions. A prototypical example is VO2, where previous studies indicated that the MIT resistance change correlate with changes in carrier density and mobility. We studied the MIT using Hall measurements with unprecedented resolution and accuracy, simultaneously with resistance measurements. Contrast to prior reports, we find that the MIT is not correlated with a change in mobility, but rather, is a macroscopic manifestation of the spatial phase separation which accompanies the MIT. Our results demonstrate that, surprisingly, properties of the nano-scale spatially-separated metallic and semiconducting domains actually retain their bulk properties. This study highlights the importance of taking into account local fluctuations and correlations when interpreting transport measurements in highly correlated systems.

  15. High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation.

    PubMed

    Yamin, Tony; Strelniker, Yakov M; Sharoni, Amos

    2016-01-01

    Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of microscopic understanding of mechanisms involved in these transitions. A prototypical example is VO2, where previous studies indicated that the MIT resistance change correlate with changes in carrier density and mobility. We studied the MIT using Hall measurements with unprecedented resolution and accuracy, simultaneously with resistance measurements. Contrast to prior reports, we find that the MIT is not correlated with a change in mobility, but rather, is a macroscopic manifestation of the spatial phase separation which accompanies the MIT. Our results demonstrate that, surprisingly, properties of the nano-scale spatially-separated metallic and semiconducting domains actually retain their bulk properties. This study highlights the importance of taking into account local fluctuations and correlations when interpreting transport measurements in highly correlated systems. PMID:26783076

  16. Role of thermal strain in the metal-insulator and structural phase transition of epitaxial VO2 films

    NASA Astrophysics Data System (ADS)

    Théry, V.; Boulle, A.; Crunteanu, A.; Orlianges, J. C.; Beaumont, A.; Mayet, R.; Mennai, A.; Cosset, F.; Bessaudou, A.; Fabert, M.

    2016-05-01

    The metal-insulator switching characteristics of VO2 play a crucial role in the performances of VO2-based devices. In this paper we study high-quality (010)-oriented epitaxial films grown on (001) sapphire substrates by means of electron-beam evaporation and investigate the role of interface defects and thermal strain on the parallel evolution of the metal-insulator transition (MIT) and structural phase transition (SPT) between the monoclinic (insulator) and rutile (metal) phases. It is demonstrated that the highly-mismatched VO2/Al2O3 interface promotes a domain-matching epitaxial growth process where the film grows in a strain-relaxed state and the lattice distortions are confined at the interface in regions with limited spatial extent. Upon cooling down from the growth temperature, tensile strain is stored in the films as a consequence of the thermal expansion mismatch between VO2 and Al2O3 . The thinnest films exhibit the highest level of tensile strain in the interfacial plane resulting in a shift of both the MIT and the SPT temperatures towards higher values, pointing to a stabilization of the monoclinic/insulating phase. Concomitantly, the electrical switching characteristics are altered (lower resistivity ratio and broader transition) as a result of the presence of structural defects located at the interface. The SPT exhibits a similar evolution with, additionally, a broader hysteresis due to the formation of an intermediate, strain-stabilized phase in the M1-R transition. Films with thickness ranging between 100-300 nm undergo a partial strain relaxation and exhibit the best performances, with a sharp (10°C temperature range) and narrow (hysteresis <4°C) MIT extending over more than four orders of magnitude in resistivity (6 ×104 ).

  17. Thermodynamic behavior near a metal-insulator transition

    NASA Technical Reports Server (NTRS)

    Paalanen, M. A.; Graebner, J. E.; Bhatt, R. N.; Sachdev, S.

    1988-01-01

    Measurements of the low-temperature specific heat of phosphorus-doped silicon for densities near the metal-insulator transition show an enhancement over the conduction-band itinerant-electron value. The enhancement increases toward lower temperatures but is less than that found for the spin susceptibility. The data are compared with various theoretical models; the large ratio of the spin susceptibility to specific heat indicates the presence of localized spin excitations in the metallic phase as the metal-insulator transition is approached.

  18. Synchronization of pairwise-coupled, identical, relaxation oscillators based on metal-insulator phase transition devices: A model study

    NASA Astrophysics Data System (ADS)

    Parihar, Abhinav; Shukla, Nikhil; Datta, Suman; Raychowdhury, Arijit

    2015-02-01

    Computing with networks of synchronous oscillators has attracted wide-spread attention as novel materials and device topologies have enabled realization of compact, scalable and low-power coupled oscillatory systems. Of particular interest are compact and low-power relaxation oscillators that have been recently demonstrated using MIT (metal-insulator-transition) devices using properties of correlated oxides. Further the computational capability of pairwise coupled relaxation oscillators has also been shown to outperform traditional Boolean digital logic circuits. This paper presents an analysis of the dynamics and synchronization of a system of two such identical coupled relaxation oscillators implemented with MIT devices. We focus on two implementations of the oscillator: (a) a D-D configuration where complementary MIT devices (D) are connected in series to provide oscillations and (b) a D-R configuration where it is composed of a resistor (R) in series with a voltage-triggered state changing MIT device (D). The MIT device acts like a hysteresis resistor with different resistances in the two different states. The synchronization dynamics of such a system has been analyzed with purely charge based coupling using a resistive (RC) and a capacitive (CC) element in parallel. It is shown that in a D-D configuration symmetric, identical and capacitively coupled relaxation oscillator system synchronizes to an anti-phase locking state, whereas when coupled resistively the system locks in phase. Further, we demonstrate that for certain range of values of RC and CC, a bistable system is possible which can have potential applications in associative computing. In D-R configuration, we demonstrate the existence of rich dynamics including non-monotonic flows and complex phase relationship governed by the ratios of the coupling impedance. Finally, the developed theoretical formulations have been shown to explain experimentally measured waveforms of such pairwise coupled

  19. Ferromagnetic-nonmagnetic and metal-insulator phase transitions at the interfaces of KTaO{sub 3} and PbTiO{sub 3}

    SciTech Connect

    Yang, Yi; Chen, Jin-Feng; Hu, Lei; Lin, Chen-Sheng; Cheng, Wen-Dan

    2014-10-21

    We studied the electronic and magnetic properties of hole doped KTaO{sub 3}/PbTiO{sub 3} interface using density functional theory methods. Ferromagnetic-nonmagnetic phase transition and metal-insulator phase transition occur simultaneously at the interface with ferroelectric polarization reversal. Furthermore, these two transitions are coupled with each other because hole doping with large concentration of holes gives rise to ferromagnetism. The interfacial magnetization, which is proportional to hole concentration at the interface, can be tuned by ferroelectric polarization, leading to strong intrinsic magnetoelectric effect at the interface of originally nonmagnetic KTaO{sub 3} and PbTiO{sub 3}.

  20. Dielectric breakdown and avalanches at nonequilibrium metal-insulator transitions.

    PubMed

    Shekhawat, Ashivni; Papanikolaou, Stefanos; Zapperi, Stefano; Sethna, James P

    2011-12-30

    Motivated by recent experiments on the finite temperature Mott transition in VO(2) films, we propose a classical coarse-grained dielectric breakdown model where each degree of freedom represents a nanograin which transitions from insulator to metal with increasing temperature and voltage at random thresholds due to quenched disorder. We describe the properties of the resulting nonequilibrium metal-insulator transition and explain the universal characteristics of the resistance jump distribution. We predict that by tuning voltage, another critical point is approached, which separates a phase of boltlike avalanches from percolationlike ones.

  1. Metal-Insulator Transition of Dirac Fermions: Variational Cluster Study

    NASA Astrophysics Data System (ADS)

    Ebato, Masaki; Kaneko, Tatsuya; Ohta, Yukinori

    2015-04-01

    A comparative study is made on the metal-insulator transition of Dirac fermions in the honeycomb and π-flux Hubbard models at half filling by means of the variational cluster approximation and cluster dynamical impurity approximation. Paying particular attention to the choice of the geometry of solver clusters and the inclusion of particle-bath sites, we show that the direct transition from the Dirac semimetallic state to the antiferromagnetic Mott insulator state occurs in these models, and therefore, the spin liquid phase is absent in the intermediate region, in agreement with recent quantum-Monte-Carlo-based calculations.

  2. On metal-insulator transition in cubic fullerides

    NASA Astrophysics Data System (ADS)

    Iwahara, Naoya; Chibotaru, Liviu

    The interplay between degenerate orbital and electron correlation is a key to characterize the electronic phases in, for example, transition metal compounds and alkali-doped fullerides. Besides, the degenerate orbital couples to spin and lattice degrees of freedom ,giving rise to exotic phenomena. Here, we develop the self-consistent Gutzwiller approach for the simultaneous treatment of the Jahn-Teller effect and electron correlation, and apply the methodology to reveal the nature of the ground electronic state of fullerides. For small Coulomb repulsion on site U, the fulleride is quasi degenerate correlated metal. With increase of U, we found the quantum phase transition from the metallic phase to JT split phase. In the latter, the Mott transition (MT) mainly develops in the half-filled subband, whereas the empty and the completely filled subbands are almost uninvolved. Therefore, we can qualify the metal-insulator transition in fullerides as an orbital selective MT induced by JT effect.

  3. Cu(Ir1 − xCrx)2S4: a model system for studying nanoscale phase coexistence at the metal-insulator transition

    PubMed Central

    Božin, E. S.; Knox, K. R.; Juhás, P.; Hor, Y. S.; Mitchell, J. F.; Billinge, S. J. L.

    2014-01-01

    Increasingly, nanoscale phase coexistence and hidden broken symmetry states are being found in the vicinity of metal-insulator transitions (MIT), for example, in high temperature superconductors, heavy fermion and colossal magnetoresistive materials, but their importance and possible role in the MIT and related emergent behaviors is not understood. Despite their ubiquity, they are hard to study because they produce weak diffuse signals in most measurements. Here we propose Cu(Ir1 − xCrx)2S4 as a model system, where robust local structural signals lead to key new insights. We demonstrate a hitherto unobserved coexistence of an Ir4+ charge-localized dimer phase and Cr-ferromagnetism. The resulting phase diagram that takes into account the short range dimer order is highly reminiscent of a generic MIT phase diagram similar to the cuprates. We suggest that the presence of quenched strain from dopant ions acts as an arbiter deciding between the competing ground states. PMID:24518384

  4. Cu(Ir1 - xCrx)2S4: a model system for studying nanoscale phase coexistence at the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Božin, E. S.; Knox, K. R.; Juhás, P.; Hor, Y. S.; Mitchell, J. F.; Billinge, S. J. L.

    2014-02-01

    Increasingly, nanoscale phase coexistence and hidden broken symmetry states are being found in the vicinity of metal-insulator transitions (MIT), for example, in high temperature superconductors, heavy fermion and colossal magnetoresistive materials, but their importance and possible role in the MIT and related emergent behaviors is not understood. Despite their ubiquity, they are hard to study because they produce weak diffuse signals in most measurements. Here we propose Cu(Ir1 - xCrx)2S4 as a model system, where robust local structural signals lead to key new insights. We demonstrate a hitherto unobserved coexistence of an Ir4+ charge-localized dimer phase and Cr-ferromagnetism. The resulting phase diagram that takes into account the short range dimer order is highly reminiscent of a generic MIT phase diagram similar to the cuprates. We suggest that the presence of quenched strain from dopant ions acts as an arbiter deciding between the competing ground states.

  5. Distinctive Finite Size Effects on the Phase Diagram and Metal-insulator Transitions of Tungsten-doped Vanadium(IV) Oxide

    SciTech Connect

    L Whittaker; T Wu; C Patridge; S Ganapathy; S Banerjee

    2011-12-31

    The influence of finite size in altering the phase stabilities of strongly correlated materials gives rise to the interesting prospect of achieving additional tunability of solid-solid phase transitions such as those involved in metal-insulator switching, ferroelectricity, and superconductivity. We note here some distinctive finite size effects on the relative phase stabilities of insulating (monoclinic) and metallic (tetragonal) phases of solid-solution W{sub x}V{sub 1-x}O{sub 2}. Ensemble differential scanning calorimetry and individual nanobelt electrical transport measurements suggest a pronounced hysteresis between metal {yields} insulator and insulator {yields} metal phase transformations. Both transitions are depressed to lower critical temperatures upon the incorporation of substitutional tungsten dopants but the impact on the former transition seems far more prominent. In general, the depression in the critical temperatures upon tungsten doping far exceeds corresponding values for bulk W{sub x}V{sub 1-x}O{sub 2} of the same composition. Notably, the depression in phase transition temperature saturates at a relatively low dopant concentration in the nanobelts, thought to be associated with the specific sites occupied by the tungsten substitutional dopants in these structures. The marked deviations from bulk behavior are rationalized in terms of a percolative model of the phase transition taking into account the nucleation of locally tetragonal domains and enhanced carrier delocalization that accompany W{sup 6+} doping in the W{sub x}V{sub 1-x}O{sub 2} nanobelts.

  6. Effective Hamiltonians for correlated narrow energy band systems and magnetic insulators: Role of spin-orbit interactions in metal-insulator transitions and magnetic phase transitions.

    PubMed

    Chakraborty, Subrata; Vijay, Amrendra

    2016-04-14

    Using a second-quantized many-electron Hamiltonian, we obtain (a) an effective Hamiltonian suitable for materials whose electronic properties are governed by a set of strongly correlated bands in a narrow energy range and (b) an effective spin-only Hamiltonian for magnetic materials. The present Hamiltonians faithfully include phonon and spin-related interactions as well as the external fields to study the electromagnetic response properties of complex materials and they, in appropriate limits, reduce to the model Hamiltonians due to Hubbard and Heisenberg. With the Hamiltonian for narrow-band strongly correlated materials, we show that the spin-orbit interaction provides a mechanism for metal-insulator transition, which is distinct from the Mott-Hubbard (driven by the electron correlation) and the Anderson mechanism (driven by the disorder). Next, with the spin-only Hamiltonian, we demonstrate the spin-orbit interaction to be a reason for the existence of antiferromagnetic phase in materials which are characterized by a positive isotropic spin-exchange energy. This is distinct from the Néel-VanVleck-Anderson paradigm which posits a negative spin-exchange for the existence of antiferromagnetism. We also find that the Néel temperature increases as the absolute value of the spin-orbit coupling increases. PMID:27083708

  7. Real-Time Structural and Electrical Characterization of Metal-Insulator Transition in Strain-Modulated Single-Phase VO2 Wires with Controlled Diameters.

    PubMed

    Kim, Min-Woo; Ha, Sung-Soo; Seo, Okkyun; Noh, Do Young; Kim, Bong-Joong

    2016-07-13

    Single-crystal VO2 wires have gained tremendous popularity for enabling the study of the fundamental properties of the metal-insulator transition (MIT); however, it remains tricky to precisely measure the intrinsic properties of the transitional phases with controlled wire-growth properties, such as diameter. Here, we report a facile method for growing VO2 wires with controlled diameters by separating the formation of the liquidus V2O5 seed droplets from the evolution of the VO2 wire using oxygen gas. The kinetic analyses suggest that the growth proceeds via the VS (vapor-solid) mechanism, whereas the droplet determines the size and the location of the wire. In situ Raman spectroscopy combined with analyses of the electrical properties of an individual wire allowed us to construct a diameter-temperature phase diagram from three initial phases (i.e., M1, T, and M2), which were created by misfit stress from the substrate and were preserved at room temperature. We also correlated this relation with resistivity-diameter and activation energy-diameter relations supported by theoretical modeling. These carefully designed approaches enabled us to elucidate the details of the phase transitions over a wide range of stress conditions, offering an opportunity to quantify relevant thermodynamic and electronic parameters (including resistivities, activation energies, and energy barriers of the key insulating phases) and to explain the intriguing behaviors of the T phase during the MIT.

  8. Real-Time Structural and Electrical Characterization of Metal-Insulator Transition in Strain-Modulated Single-Phase VO2 Wires with Controlled Diameters.

    PubMed

    Kim, Min-Woo; Ha, Sung-Soo; Seo, Okkyun; Noh, Do Young; Kim, Bong-Joong

    2016-07-13

    Single-crystal VO2 wires have gained tremendous popularity for enabling the study of the fundamental properties of the metal-insulator transition (MIT); however, it remains tricky to precisely measure the intrinsic properties of the transitional phases with controlled wire-growth properties, such as diameter. Here, we report a facile method for growing VO2 wires with controlled diameters by separating the formation of the liquidus V2O5 seed droplets from the evolution of the VO2 wire using oxygen gas. The kinetic analyses suggest that the growth proceeds via the VS (vapor-solid) mechanism, whereas the droplet determines the size and the location of the wire. In situ Raman spectroscopy combined with analyses of the electrical properties of an individual wire allowed us to construct a diameter-temperature phase diagram from three initial phases (i.e., M1, T, and M2), which were created by misfit stress from the substrate and were preserved at room temperature. We also correlated this relation with resistivity-diameter and activation energy-diameter relations supported by theoretical modeling. These carefully designed approaches enabled us to elucidate the details of the phase transitions over a wide range of stress conditions, offering an opportunity to quantify relevant thermodynamic and electronic parameters (including resistivities, activation energies, and energy barriers of the key insulating phases) and to explain the intriguing behaviors of the T phase during the MIT. PMID:27253750

  9. Quantum critical transport at a continuous metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Haldar, P.; Laad, M. S.; Hassan, S. R.

    2016-08-01

    In contrast to the first-order correlation-driven Mott metal-insulator transition, continuous disorder-driven transitions are intrinsically quantum critical. Here, we investigate transport quantum criticality in the Falicov-Kimball model, a representative of the latter class in the strong disorder category. Employing cluster-dynamical mean-field theory, we find clear and anomalous quantum critical scaling behavior manifesting as perfect mirror symmetry of scaling curves on both sides of the MIT. Surprisingly, we find that the beta function β (g ) scales as log(g ) deep into the bad-metallic phase as well, providing a sound unified basis for these findings. We argue that such strong localization quantum criticality may manifest in real three-dimensional systems where disorder effects are more important than electron-electron interactions.

  10. Metal-insulator transitions due to self-doping

    SciTech Connect

    Blawid, S.; Tuan, H.A.; Yanagisawa, T.; Fulde, P.

    1996-09-01

    We investigate the influence of an unoccupied band on the transport properties of a strongly correlated electron system. For that purpose, additional orbitals are coupled to a Hubbard model via hybridization. The filling is one electron per site. Depending on the position of the additional band, both a metal-to-insulator and an insulator-to-metal transition occur with increasing hybridization. The latter transition from a Mott insulator into a metal via {open_quote}{open_quote}self-doping{close_quote}{close_quote} was recently proposed to explain the low carrier concentration in Yb{sub 4}As{sub 3}. We suggest a restrictive parameter regime for this transition, making use of exact results in various limits. The predicted absence of the self-doping transition for nested Fermi surfaces is confirmed by means of an unrestricted Hartree-Fock approximation and an exact diagonalization study in one dimension. In the general case metal-insulator phase diagrams are obtained within the slave-boson mean-field and the alloy-analog approximations. {copyright} {ital 1996 The American Physical Society.}

  11. Metal-insulator transition of fermions on a kagome lattice at 1/3 filling.

    PubMed

    Nishimoto, Satoshi; Nakamura, Masaaki; O'Brien, Aroon; Fulde, Peter

    2010-05-14

    We discuss the metal-insulator transition of the spinless fermion model on a kagome lattice at 1/3 filling. The system is analyzed by using exact diagonalization, density-matrix renormalization group methods, and random-phase approximation. In the strong-coupling region, the charge-ordered ground state is consistent with the predictions of an effective model, i.e., plaquette order. We find that the qualitative properties of the metal-insulator transition are totally different depending on the sign of the hopping matrix elements, reflecting the difference in the band structure near the Fermi level.

  12. Quantum capacitance in thin film vanadium dioxide metal insulator transition

    NASA Astrophysics Data System (ADS)

    Wu, Zhe; Knighton, Talbot; Tarquini, Vinicio; Torres, David; Wang, Tongyu; Sepulveda, Nelson; Huang, Jian

    We present capacitance measurements of the electronic density of states performed in high quality vanadium dioxide (VO2) thin films on sapphire (Al2O3) substrate. These films show the expected metal insulator transition near 60 °C with resistivity changing by 3 orders of magnitude with a hysteresis of 10 °C. To make a capacitive probe, a gate is suspended above the film surface using a flip-chip method with microfabricated supports. The geometric capacitance per-area reached is 40 pF/mm2. Such a large capacitance can be significantly modified by electron interaction and band charging/discharging which appear as an extra term known as the quantum capacitance (Cq). An AC signal applied to the gate allows measurement of the changing density of states (DOS) across the MIT. The DOS abruptly increases as the sample is heated through the transition point. Conversely the low temperature drop of d μ / d n is consistent with an energy gap opening in the insulating phase. These parameters shed light on the transition mechanism. NSF DMR-1105183, NSF ECCS 1306311.

  13. Metal-insulator transition in films of doped semiconductor nanocrystals.

    PubMed

    Chen, Ting; Reich, K V; Kramer, Nicolaas J; Fu, Han; Kortshagen, Uwe R; Shklovskii, B I

    2016-03-01

    To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration nc for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.

  14. Anderson metal-insulator transitions with classical magnetic impurities

    SciTech Connect

    Jung, Daniel; Kettemann, Stefan

    2014-08-20

    We study the effects of classical magnetic impurities on the Anderson metal-insulator transition (AMIT) numerically. In particular we find that while a finite concentration of Ising impurities lowers the critical value of the site-diagonal disorder amplitude W{sub c}, in the presence of Heisenberg impurities, W{sub c} is first increased with increasing exchange coupling strength J due to time-reversal symmetry breaking. The resulting scaling with J is compared to analytical predictions by Wegner [1]. The results are obtained numerically, based on a finite-size scaling procedure for the typical density of states [2], which is the geometric average of the local density of states. The latter can efficiently be calculated using the kernel polynomial method [3]. Although still suffering from methodical shortcomings, our method proves to deliver results close to established results for the orthogonal symmetry class [4]. We extend previous approaches [5] by combining the KPM with a finite-size scaling analysis. We also discuss the relevance of our findings for systems like phosphor-doped silicon (Si:P), which are known to exhibit a quantum phase transition from metal to insulator driven by the interplay of both interaction and disorder, accompanied by the presence of a finite concentration of magnetic moments [6].

  15. Quasiparticle transformation during a metal-insulator transition in graphene.

    PubMed

    Bostwick, Aaron; McChesney, Jessica L; Emtsev, Konstantin V; Seyller, Thomas; Horn, Karsten; Kevan, Stephen D; Rotenberg, Eli

    2009-07-31

    Here we show, with simultaneous transport and photoemission measurements, that the graphene-terminated SiC(0001) surface undergoes a metal-insulator transition upon dosing with small amounts of atomic hydrogen. We find the room temperature resistance increases by about 4 orders of magnitude, a transition accompanied by anomalies in the momentum-resolved spectral function including a non-Fermi-liquid behavior and a breakdown of the quasiparticle picture. These effects are discussed in terms of a possible transition to a strongly (Anderson) localized ground state. PMID:19792520

  16. Pure electronic metal-insulator transition at the interface of complex oxides.

    PubMed

    Meyers, D; Liu, Jian; Freeland, J W; Middey, S; Kareev, M; Kwon, Jihwan; Zuo, J M; Chuang, Yi-De; Kim, J W; Ryan, P J; Chakhalian, J

    2016-01-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change. PMID:27324948

  17. Pure electronic metal-insulator transition at the interface of complex oxides

    PubMed Central

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; Chakhalian, J.

    2016-01-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change. PMID:27324948

  18. Pure electronic metal-insulator transition at the interface of complex oxides

    NASA Astrophysics Data System (ADS)

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; Chakhalian, J.

    2016-06-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.

  19. Metal-insulator and charge ordering transitions in oxide nanostructures

    NASA Astrophysics Data System (ADS)

    Singh, Sujay Kumar

    Strongly correlated oxides are a class of materials wherein interplay of various degrees of freedom results in novel electronic and magnetic phenomena. Vanadium oxides are widely studied correlated materials that exhibit metal-insulator transitions (MIT) in a wide temperature range from 70 K to 380 K. In this Thesis, results from electrical transport measurements on vanadium dioxide (VO2) and vanadium oxide bronze (MxV 2O5) (where M: alkali, alkaline earth, and transition metal cations) are presented and discussed. Although the MIT in VO2 has been studied for more than 50 years, the microscopic origin of the transition is still debated since a slew of external parameters such as light, voltage, and strain are found to significantly alter the transition. Furthermore, recent works on electrically driven switching in VO2 have shown that the role of Joule heating to be a major cause as opposed to electric field. We explore the mechanisms behind the electrically driven switching in single crystalline nanobeams of VO2 through DC and AC transport measurements. The harmonic analysis of the AC measurement data shows that non-uniform Joule heating causes electronic inhomogeneities to develop within the nanobeam and is responsible for driving the transition in VO2. Surprisingly, field assisted emission mechanisms such as Poole-Frenkel effect is found to be absent and the role of percolation is also identified in the electrically driven transition. This Thesis also provides a new insight into the mechanisms behind the electrolyte gating induced resistance modulation and the suppression of MIT in VO2. We show that the metallic phase of VO2 induced by electrolyte gating is due to an electrochemical process and can be both reversible and irreversible under different conditions. The kinetics of the redox processes increase with temperature; a complete suppression of the transition and the stabilization of the metallic phase are achievable by gating in the rutile metallic phase

  20. Quantum spin liquids and the metal-insulator transition in doped semiconductors.

    PubMed

    Potter, Andrew C; Barkeshli, Maissam; McGreevy, John; Senthil, T

    2012-08-17

    We describe a new possible route to the metal-insulator transition in doped semiconductors such as Si:P or Si:B. We explore the possibility that the loss of metallic transport occurs through Mott localization of electrons into a quantum spin liquid state with diffusive charge neutral "spinon" excitations. Such a quantum spin liquid state can appear as an intermediate phase between the metal and the Anderson-Mott insulator. An immediate testable consequence is the presence of metallic thermal conductivity at low temperature in the electrical insulator near the metal-insulator transition. Further, we show that though the transition is second order, the zero temperature residual electrical conductivity will jump as the transition is approached from the metallic side. However, the electrical conductivity will have a nonmonotonic temperature dependence that may complicate the extrapolation to zero temperature. Signatures in other experiments and some comparisons with existing data are made. PMID:23006401

  1. Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

    NASA Astrophysics Data System (ADS)

    Menges, F.; Dittberner, M.; Novotny, L.; Passarello, D.; Parkin, S. S. P.; Spieser, M.; Riel, H.; Gotsmann, B.

    2016-04-01

    The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, and the sphere temperatures were varied in a range between 100 and 200 °C. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.

  2. Metal-insulator transition in Na{sub x}WO{sub 3}: Photoemission spectromicroscopy study

    SciTech Connect

    Paul, Sanhita Ghosh, Anirudha Raj, Satyabrata

    2014-04-24

    We have investigated the validity of percolation model, which is quite often invoked to explain the metal-insulator transition in sodium tungsten bronzes, Na{sub x}WO{sub 3} by photoelectron spectromicroscopy. The spatially resolved direct spectromicroscopic probing on both the insulating and metallic phases of high quality single crystals of Na{sub x}WO{sub 3} reveals the absence of any microscopic inhomogeneities embedded in the system within the experimental limit. Neither any metallic domains in the insulating host nor any insulating domains in the metallic host have been found to support the validity of percolation model to explain the metal-insulator transition in Na{sub x}WO{sub 3}.

  3. Metal insulator transitions in perovskite SrIrO{sub 3} thin films

    SciTech Connect

    Biswas, Abhijit; Jeong, Yoon Hee; Kim, Ki-Seok

    2014-12-07

    Understanding of metal insulator transitions in a strongly correlated system, driven by Anderson localization (disorder) and/or Mott localization (correlation), is a long standing problem in condensed matter physics. The prevailing fundamental question would be how these two mechanisms contrive to accomplish emergent anomalous behaviors. Here, we have grown high quality perovskite SrIrO{sub 3} thin films, containing a strong spin orbit coupled 5d element Ir, on various substrates such as GdScO{sub 3} (110), DyScO{sub 3} (110), SrTiO{sub 3} (001), and NdGaO{sub 3} (110) with increasing lattice mismatch, in order to carry out a systematic study on the transport properties. We found that metal insulator transitions can be induced in this system; by either reducing thickness (on best lattice matched substrate) or changing degree of lattice strain (by lattice mismatch between film and substrates) of films. Surprisingly these two pathways seek two distinct types of metal insulator transitions; the former falls into disorder driven Anderson type whereas the latter turns out to be of unconventional Mott-Anderson type with the interplay of disorder and correlation. More interestingly, in the metallic phases of SrIrO{sub 3}, unusual non-Fermi liquid characteristics emerge in resistivity as Δρ ∝ T{sup ε} with ε evolving from 4/5 to 1 to 3/2 with increasing lattice strain. We discuss theoretical implications of these phenomena to shed light on the metal insulator transitions.

  4. Exponential Orthogonality Catastrophe at the Anderson Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Kettemann, S.

    2016-09-01

    We consider the orthogonality catastrophe at the Anderson metal-insulator transition (AMIT). The typical overlap F between the ground state of a Fermi liquid and the one of the same system with an added potential impurity is found to decay at the AMIT exponentially with system size L as F ˜exp (-c Lη) , where η is the power of multifractal intensity correlations. Thus, strong disorder typically increases the sensitivity of a system to an added impurity exponentially. We recover, on the metallic side of the transition, Anderson's result that the fidelity F decays with a power law F ˜L-q (EF) with system size L . Its power increases as the Fermi energy EF approaches the mobility edge EM as q (EF)˜[(EF-EM )/EM]-ν η , where ν is the critical exponent of the correlation length ξc. On the insulating side of the transition, F is constant for system sizes exceeding the localization length ξ . While these results are obtained for the typical fidelity F , we find that log F is widely, log normally, distributed with a width diverging at the AMIT. As a consequence, the mean value of the fidelity F converges to one at the AMIT, in strong contrast to its typical value which converges to zero exponentially fast with system size L . This counterintuitive behavior is explained as a manifestation of multifractality at the AMIT.

  5. Origin of the metal-insulator transition of indium atom wires on Si(111)

    NASA Astrophysics Data System (ADS)

    Kim, Sun-Woo; Cho, Jun-Hyung

    2016-06-01

    As a prototypical one-dimensional electron system, self-assembled indium (In) nanowires on the Si(111) surface have been believed to drive a metal-insulator transition by a charge-density-wave (CDW) formation due to Fermi surface nesting. Here, our first-principles calculations demonstrate that the structural phase transition from the high-temperature 4 ×1 phase to the low-temperature 8 ×2 phase occurs through an exothermic reaction with the consecutive bond-breaking and bond-making processes, giving rise to an energy barrier between the two phases as well as a gap opening. This atomistic picture for the phase transition not only identifies its first-order nature but also solves a long-standing puzzle of the origin of the metal-insulator transition in terms of the ×2 periodic lattice reconstruction of In hexagons via bond breakage and new bond formation, not by the Peierls-instability-driven CDW formation.

  6. Metal-Insulator Transition in the Hubbard Model: Correlations and Spiral Magnetic Structures

    NASA Astrophysics Data System (ADS)

    Timirgazin, Marat A.; Igoshev, Petr A.; Arzhnikov, Anatoly K.; Irkhin, Valentin Yu.

    2016-03-01

    The metal-insulator transition (MIT) for the square, simple cubic, and body-centered cubic lattices is investigated within the t-t^' Hubbard model at half-filling by using both the generalized for the case of spiral order Hartree-Fock approximation (HFA) and Kotliar-Ruckenstein slave-boson approach. It turns out that the magnetic scenario of MIT becomes superior over the non-magnetic one. The electron correlations lead to some suppression of the spiral phases in comparison with HFA. We found the presence of a metallic antiferromagnetic (spiral) phase in the case of three-dimensional lattices.

  7. Metal-insulator transitions in IZO, IGZO, and ITZO films

    NASA Astrophysics Data System (ADS)

    Makise, Kazumasa; Hidaka, Kazuya; Ezaki, Syohei; Asano, Takayuki; Shinozaki, Bunju; Tomai, Shigekazu; Yano, Koki; Nakamura, Hiroaki

    2014-10-01

    In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator transition (MIT), we used the Ioffe-Regel criterion. We found that the MIT occurs in a narrow range between k F ℓ = 0.13 and k F ℓ = 0.25, where k F and ℓ are the Fermi wave number and electron mean free path, respectively. For films in the insulating region, we analyzed ρ ( T ) using a procedure proposed by Zabrodskii and Zinov'eva. This analysis confirmed the occurrence of Mott and Efros-Shklovskii (ES) variable-range hopping. The materials studied show crossover behavior from exp(TMott/T)1/4 or exp(TMott/T)1/3 for Mott hopping conduction to exp(TES/T)1/2 for ES hopping conduction with decreasing temperature. For both 2D and 3D materials, we found that the relationship between TMott and TES satisfies TES ∝ TMott2/3.

  8. Metal-insulator transitions in IZO, IGZO, and ITZO films

    SciTech Connect

    Makise, Kazumasa; Hidaka, Kazuya; Ezaki, Syohei; Asano, Takayuki; Shinozaki, Bunju; Tomai, Shigekazu; Yano, Koki; Nakamura, Hiroaki

    2014-10-21

    In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator transition (MIT), we used the Ioffe–Regel criterion. We found that the MIT occurs in a narrow range between k{sub F}ℓ =0.13 and k{sub F}ℓ =0.25, where k{sub F} and ℓ are the Fermi wave number and electron mean free path, respectively. For films in the insulating region, we analyzed ρ(T) using a procedure proposed by Zabrodskii and Zinov'eva. This analysis confirmed the occurrence of Mott and Efros–Shklovskii (ES) variable-range hopping. The materials studied show crossover behavior from exp(T{sub Mott}/T){sup 1/4} or exp(T{sub Mott}/T){sup 1/3} for Mott hopping conduction to exp(T{sub ES}/T){sup 1/2} for ES hopping conduction with decreasing temperature. For both 2D and 3D materials, we found that the relationship between T{sub Mott} and T{sub ES} satisfies T{sub ES}∝T{sub Mott}{sup 2/3}.

  9. Broken symmetry and strangeness of the semiconductor impurity band metal-insulator transition.

    PubMed

    Phillips, J C

    1998-06-23

    The filamentary model of the metal-insulator transition in randomly doped semiconductor impurity bands is geometrically equivalent to similar models for continuous transitions in dilute antiferromagnets and even to the lambda transition in liquid He, but the critical behaviors are different. The origin of these differences lies in two factors: quantum statistics and the presence of long range Coulomb forces on both sides of the transition in the electrical case. In the latter case, in addition to the main transition, there are two satellite transitions associated with disappearance of the filamentary structure in both insulating and metallic phases. These two satellite transitions were first identified by Fritzsche in 1958, and their physical origin is explained here in geometrical and topological terms that facilitate calculation of critical exponents.

  10. Pure electronic metal-insulator transition at the interface of complex oxides

    DOE PAGESBeta

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; et al

    2016-06-21

    We observed complex materials in electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. We demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. Furthermore, these findings illustrate the utility of heterointerfaces as amore » powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.« less

  11. Thermally driven analog of the Barkhausen effect at the metal-insulator transition in vanadium dioxide

    SciTech Connect

    Huber-Rodriguez, Benjamin; Ji, Heng; Chen, Chih-Wei; Kwang, Siu Yi; Hardy, Will J.; Morosan, Emilia; Natelson, Douglas

    2014-09-29

    The physics of the metal-insulator transition (MIT) in vanadium dioxide remains a subject of intense interest. Because of the complicating effects of elastic strain on the phase transition, there is interest in comparatively strain-free means of examining VO{sub 2} material properties. We report contact-free, low-strain studies of the MIT through an inductive bridge approach sensitive to the magnetic response of VO{sub 2} powder. Rather than observing the expected step-like change in susceptibility at the transition, we argue that the measured response is dominated by an analog of the Barkhausen effect, due to the extremely sharp jump in the magnetic response of each grain as a function of time as the material is cycled across the phase boundary. This effect suggests that future measurements could access the dynamics of this and similar phase transitions.

  12. Thermal Conductivity and Thermopower near the 2D Metal-Insulator transition, Final Technical Report

    SciTech Connect

    SARACHIK, MYRIAM P

    2015-02-20

    STUDIES OF STRONGLY-INTERACTING 2D ELECTRON SYSTEMS – There is a great deal of current interest in the properties of systems in which the interaction between electrons (their potential energy) is large compared to their kinetic energy. We have investigated an apparent, unexpected metal-insulator transition inferred from the behavior of the temperature-dependence of the resistivity; moreover, detailed analysis of the behavior of the magnetoresistance suggests that the electrons’ effective mass diverges, supporting this scenario. Whether this is a true phase transition or crossover behavior has been strenuously debated over the past 20 years. Our measurements have now shown that the thermoelectric power of these 2D materials diverges at a finite density, providing clear evidence that this is, in fact, a phase transition to a new low-density phase which may be a precursor or a direct transition to the long sought-after electronic crystal predicted by Eugene Wigner in 1934.

  13. Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Ito, Kota; Nishikawa, Kazutaka; Iizuka, Hideo

    2016-02-01

    Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO2) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO2 film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.

  14. Ultrafast electronic dynamics in the metal-insulator transition compound NdNiO3

    NASA Astrophysics Data System (ADS)

    Ruello, P.; Zhang, S.; Laffez, P.; Perrin, B.; Gusev, V.

    2007-10-01

    Visible ultrafast optical property studies have been performed in the metal-insulator transition compound NdNiO3 from room temperature down to 16K . A clear slowing down of the electronic relaxation is reported when the system becomes insulating. Two characteristic times of electronic relaxation have been found in the insulating phase while a single one is observed in the metallic state. Moreover, the magnitude of the ultrafast electronic transient reflectivity exhibits a drastic increase in the insulating state. Finally, a hysteresis of the electronic response is evidenced in accordance with electrical resistivity measurements.

  15. Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures.

    PubMed

    Chen, Xiaolong; Wu, Zefei; Xu, Shuigang; Wang, Lin; Huang, Rui; Han, Yu; Ye, Weiguang; Xiong, Wei; Han, Tianyi; Long, Gen; Wang, Yang; He, Yuheng; Cai, Yuan; Sheng, Ping; Wang, Ning

    2015-01-01

    The metal-insulator transition is one of the remarkable electrical properties of atomically thin molybdenum disulphide. Although the theory of electron-electron interactions has been used in modelling the metal-insulator transition in molybdenum disulphide, the underlying mechanism and detailed transition process still remain largely unexplored. Here we demonstrate that the vertical metal-insulator-semiconductor heterostructures built from atomically thin molybdenum disulphide are ideal capacitor structures for probing the electron states. The vertical configuration offers the added advantage of eliminating the influence of large impedance at the band tails and allows the observation of fully excited electron states near the surface of molybdenum disulphide over a wide excitation frequency and temperature range. By combining capacitance and transport measurements, we have observed a percolation-type metal-insulator transition, driven by density inhomogeneities of electron states, in monolayer and multilayer molybdenum disulphide. In addition, the valence band of thin molybdenum disulphide layers and their intrinsic properties are accessed.

  16. Light scattering by epitaxial VO{sub 2} films near the metal-insulator transition point

    SciTech Connect

    Lysenko, Sergiy Fernández, Felix; Rúa, Armando; Figueroa, Jose; Vargas, Kevin; Cordero, Joseph; Aparicio, Joaquin; Sepúlveda, Nelson

    2015-05-14

    Experimental observation of metal-insulator transition in epitaxial films of vanadium dioxide is reported. Hemispherical angle-resolved light scattering technique is applied for statistical analysis of the phase transition processes on mesoscale. It is shown that the thermal hysteresis strongly depends on spatial frequency of surface irregularities. The transformation of scattering indicatrix depends on sample morphology and is principally different for the thin films with higher internal elastic strain and for the thicker films where this strain is suppressed by introduction of misfit dislocations. The evolution of scattering indicatrix, fractal dimension, surface power spectral density, and surface autocorrelation function demonstrates distinctive behavior which elucidates the influence of structural defects and strain on thermal hysteresis, twinning of microcrystallites, and domain formation during the phase transition.

  17. Correlation Between Metal-Insulator Transition Characteristics and Electronic Structure Changes in Vanadium Oxide Thin Films

    SciTech Connect

    Ruzmetov,D.; Senanayake, S.; Narayanamurti, V.; Ramanathan, S.

    2008-01-01

    We correlate electron transport data directly with energy band structure measurements in vanadium oxide thin films with varying V-O stoichiometry across the VO2 metal-insulator transition. A set of vanadium oxide thin films were prepared by reactive dc sputtering from a V target at various oxygen partial pressures (O2 p.p.). Metal-insulator transition (MIT) characteristic to VO2 can be seen from the temperature dependence of electrical resistance of the films sputtered at optimal O2 p.p. Lower and higher O2 p.p. result in disappearance of the MIT. The results of the near edge x-ray absorption fine structure spectroscopy of the O K edge in identical VO films are presented. Redistribution of the spectral weight from {sigma}* to {pi}* bands is found in the vanadium oxide films exhibiting stronger VO2 MIT. This is taken as evidence of the strengthening of the metal-metal ion interaction with respect to the metal-ligand and indirect V-O-V interaction in vanadium oxide films featuring sharp MIT. We also observe a clear correlation between MIT and the width and area of the lower {pi}* band, which is likely to be due to the emergence of the d|| band overlapping with {pi}*. The strengthening of this d|| band near the Fermi level only in the vanadium oxide compounds displaying the MIT points out the importance of the role of the d|| band and electron correlations in the phase transition.

  18. Raman study of the metal-insulator transition in pyrochlore Mo oxides

    NASA Astrophysics Data System (ADS)

    Taniguchi, K.; Katsufuji, T.; Iguchi, S.; Taguchi, Y.; Takagi, H.; Tokura, Y.

    2004-09-01

    Raman scattering spectra have been investigated for the correlated 4d -electron system, R2Mo2O7 ( R=Nd , Sm , Gd , Tb , Dy , Nd1-xDyx ), which undergoes a metal-insulator transition with changing the rare-earth ion R , or equivalently the one-electron bandwidth. It is found that several phonon peaks modulating the Mo-O-Mo bond angle appear in the metallic phase ( R=Nd , Sm , Gd , Nd1-xDyx ), whereas they are remarkably suppressed in intensity in the insulating phase ( R=Tb , Dy ). This result indicates that the phonon modes of R2Mo2O7 are coupled with the electron-hole excitation across the Fermi level, thus probing sensitively the low-energy charge dynamics in the vicinity of the bandwidth-control Mott transition.

  19. Electrical-field-driven metal-insulator transition tuned with self-aligned atomic defects.

    PubMed

    Syrlybekov, Askar; Wu, Han-Chun; Mauit, Ozhet; Wu, Ye-Cun; Maguire, Pierce; Khalid, Abbas; Coileáin, Cormac Ó; Farrell, Leo; Heng, Cheng-Lin; Abid, Mohamed; Liu, Huajun; Yang, Li; Zhang, Hong-Zhou; Shvets, Igor V

    2015-09-01

    Recently, significant attention has been paid to the resistance switching (RS) behaviour in Fe3O4 and it was explained through the analogy of the electrically driven metal-insulator transition based on the quantum tunneling theory. Here, we propose a method to experimentally support this explanation and provide a way to tune the critical switching parameter by introducing self-aligned localized impurities through the growth of Fe3O4 thin films on stepped SrTiO3 substrates. Anisotropic behavior in the RS was observed, where a lower switching voltage in the range of 10(4) V cm(-1) is required to switch Fe3O4 from a high conducting state to a low conducting state when the electrical field is applied along the steps. The anisotropic RS behavior is attributed to a high density array of anti-phase boundaries (APBs) formed at the step edges and thus are aligned along the same direction in the film which act as a train of hotspot forming conduits for resonant tunneling. Our experimental studies open an interesting window to tune the electrical-field-driven metal-insulator transition in strongly correlated systems.

  20. Electrical permittivity driven metal-insulator transition in heterostructures of nonpolar Mott and band insulators

    NASA Astrophysics Data System (ADS)

    Omori, Yukiko; Rüegg, Andreas; Sigrist, Manfred

    2014-10-01

    Metallic interfaces between insulating perovskites are often observed in heterostructures combining polar and nonpolar materials. In these systems, the polar discontinuity across the interface may drive an electronic reconstruction inducing free carriers at the interface. Here, we theoretically show that a metallic interface between a Mott and a band insulator can also form in the absence of a polar discontinuity. The condition for the appearance of such a metallic state is consistent with the classical Mott criterion: the metallic state is stable if the screening length falls below the effective Bohr radius of a particle-hole pair. In this case, the metallic state bears a remarkable similarity to the one found in polar/nonpolar heterostructures. On the other hand, if the screening length approaches the size of the effective Bohr radius, particles and holes are bound to each other resulting in an overall insulating phase. We analyze this metal-insulator transition, which is tunable by the dielectric constant, in the framework of the slave-boson mean-field theory for a lattice model with both on-site and long-range Coulomb interactions. We discuss ground-state properties and transport coefficients, which we derive in the relaxation-time approximation. Interestingly, we find that the metal-insulator transition is accompanied by a strong enhancement of the Seebeck coefficient in the band-insulator region in the vicinity of the interface. The implications of our theoretical findings for various experimental systems such as nonpolar (110) interfaces are also discussed.

  1. Buckley Prize Talk: The Suprerconductor-(Metal)-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Kapitulnik, Aharon

    2015-03-01

    While the classical theory of phase transitions has been extraordinarily successful, there are several reasons to exercise caution when applying this approach to the zero temperature superconducting transition. First, experimental identification of the relevant phases requires extrapolation to zero temperature, which becomes complicated, especially when one needs to identify sources of dissipation. In addition, since superconductivity may be highly inhomogeneous as appreciable superconducting order parameter may be concentrated in ``superconducting puddles'' due to disorder and/or spontaneous phase separation, the nature of the quantum phase transition to a superconducting state may be highly anomalous, where the system attempts to optimizes the formation of puddles with the Josephson coupling among them to obtain global superconductivity. In this talk we will review some of the consequences of these considerations, emphasizing the possible emergence of anomalous metallic phases close to the superconductor-insulator transition.

  2. Metal-insulator transitions of bulk and domain-wall states in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Ueda, Kentaro

    A family of pyrochlore iridates R2Ir2O7 offers an ideal platform to explore intriguing phases such as topological Mott insulator and Weyl semimetal. Here we report transport and spectroscopic studies on the metal-insulator transition (MIT) induced by the modulations of effective electron correlation and magnetic structures, which is finely tuned by external pressure, chemical substitutions (R = Nd1-x Prx and SmyNd1-y) , and magnetic field. A reentrant insulator-metal-insulator transition is observed near the paramagnetic insulator-metal phase boundary reminiscent of a first-order Mott transition for R = SmyNd1-y compounds (y~0.8). The metallic states on the magnetic domain walls (DWs), which are observed for R = Nd in real space as well as in transport properties, is simultaneously turned into the insulating one. These findings imply that the DW electronic state is intimately linked to the bulk states. For the mixed R = Nd1-x Prx compounds, the divergent behavior of resistivity with antiferromagnetic order is significantly suppressed by applying a magnetic field along [001] direction. It is attributed to the phase transition from the antiferromagnetic insulating state to the novel Weyl (semi-)metal state accompanied by the change of magnetic structure. The present study combined with experiment and theory suggests that there are abundant exotic phases with physical parameters such as electron correlation and Ir-5 d magnetic order pattern. Work performed in collaboration with J. Fujioka, B.-J. Yang, C. Terakura, N. Nagaosa, Y. Tokura (University of Tokyo, RIKEN CEMS), J. Shiogai, A. Tsukazaki, S. Nakamura, S. Awaji (Tohoku University). 1This work was supported by JSPS FIRST Program and Grant-in-Aid for Scientific Research (Grants No. 80609488 and No. 24224009).

  3. Percolative Metal-Insulator transition in the doped Hubbard-Holstein model with the Gutzwiller Approach

    NASA Astrophysics Data System (ADS)

    Moradi Kurdestany, Jamshid; Satpathy, Sashi

    Motivated by the recent progress in understanding of Mott insulators away from half filling, observed in many perovskite oxides, we study the metal-insulator transition in the Hubbard-Holstein model, which contains both the Coulomb and the electron-lattice (Jahn Teller) interactions by using the Gutzwiller variational method. We find that strong electron-lattice Interaction leads to phase separation, which however can be frustrated due to the long-range Coulomb interaction, resulting in a mixed phase consisting of puddles of metallic phases embedded in an insulating matrix. When the dopant concentration exceeds a threshold value xc , the metallic part forms a percolating network leading to metallic conduction. Depending on the strength of the electron-lattice interaction, xc can be of the order of 0.05 - 0.20 or so, which is the typical value observed in the perovskites.

  4. Separating electric field and thermal effects across the metal-insulator transition in vanadium oxide nanobeams

    NASA Astrophysics Data System (ADS)

    Stabile, Adam A.; Singh, Sujay K.; Wu, Tai-Lung; Whittaker, Luisa; Banerjee, Sarbajit; Sambandamurthy, G.

    2015-07-01

    We present results from an experimental study of the equilibrium and non-equilibrium transport properties of vanadium oxide nanobeams near the metal-insulator transition (MIT). Application of a large electric field in the insulating phase across the nanobeams produces an abrupt MIT, and the individual roles of thermal and non-thermal effects in driving the transition are studied. Transport measurements at temperatures (T) far below the critical temperature (Tc) of MIT, in nanoscale vanadium oxide devices, show that both T and electric field play distinctly separate, but critical roles in inducing the MIT. Specifically, at T ≪ T c , electric field dominates the MIT through an avalanche-type process, whereas thermal effects become progressively critical as T approaches Tc.

  5. Infrared study of the metal-insulator transition regime in vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Qazilbash, M. M.; Chae, B. G.; Kim, H. T.; Basov, D. N.

    2007-03-01

    Vanadium dioxide (VO2) undergoes a metal-insulator transition at Tc 340 K. The transition region of a VO2 film has been studied with infrared ellipsometry and near-normal incidence reflectance between 40 cm-1 and 5000 cm-1. The measured optical constants are compared to calculations based on effective medium theories. The anomalies in the frequency and temperature dependence of the optical constants will be presented. The implications of the data for the mechanism of the metal-insulator transition will be discussed.

  6. Local Peltier-effect-induced reversible metal-insulator transition in VO2 nanowires

    NASA Astrophysics Data System (ADS)

    Takami, Hidefumi; Kanki, Teruo; Tanaka, Hidekazu

    2016-06-01

    We report anomalous resistance leaps and drops in VO2 nanowires with operating current density and direction, showing reversible and nonvolatile switching. This event is associated with the metal-insulator phase transition (MIT) of local nanodomains with coexistence states of metallic and insulating phases induced by thermoelectric cooling and heating effects. Because the interface of metal and insulator domains has much different Peltier coefficient, it is possible that a significant Peltier effect would be a source of the local MIT. This operation can be realized by one-dimensional domain configuration in VO2 nanowires because one straight current path through the electronic domain-interface enables theoretical control of thermoelectric effects. This result will open a new method of reversible control of electronic states in correlated electron materials.

  7. Selective electrochemical reactivity of rutile VO2 towards the suppression of metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Singh, Sujay; Abtew, Tesfaye A.; Horrocks, Gregory; Kilcoyne, Colin; Marley, Peter M.; Stabile, Adam A.; Banerjee, Sarbajit; Zhang, Peihong; Sambandamurthy, G.

    2016-03-01

    We demonstrate through electrolyte gating measurements of a single nanobeam that the rultile phase of VO2 is electrochemically more reactive than the monoclinic phase. Our results show that the complete suppression of the metal-insulator transition and stabilization of the metallic phase is possible when gate voltage is applied in the rutile metallic phase. The results are discussed based on the formation of oxygen vacancies wherein accommodation of a high concentration of vacancies in the rutile phase selectively stabilizes it by disrupting dimerization of adjacent V-V pairs required for a transition to the monoclinic phase. The creation of oxygen vacancies is proposed to proceed through the oxidation of the electrolyte. Raman spectroscopy data suggest surface metallization upon electrolyte gating with an initial coexistence of insulating monoclinic and metallic domains. The selective electrochemical reactivity of the rutile phase and the resulting defect-induced stabilization of this phase across a vastly expanded temperature window suggest a facile defect engineering route to tune electronic phase transitions.

  8. Disorder and Metal-Insulator Transitions in Weyl Semimetals.

    PubMed

    Chen, Chui-Zhen; Song, Juntao; Jiang, Hua; Sun, Qing-feng; Wang, Ziqiang; Xie, X C

    2015-12-11

    The Weyl semimetal (WSM) is a newly proposed quantum state of matter. It has Weyl nodes in bulk excitations and Fermi arc surface states. We study the effects of disorder and localization in WSMs and find three novel phase transitions. (i) Two Weyl nodes near the Brillouin zone boundary can be annihilated pairwise by disorder scattering, resulting in the opening of a topologically nontrivial gap and a transition from a WSM to a three-dimensional quantum anomalous Hall state. (ii) When the two Weyl nodes are well separated in momentum space, the emergent bulk extended states can give rise to a direct transition from a WSM to a 3D diffusive anomalous Hall metal. (iii) Two Weyl nodes can emerge near the zone center when an insulating gap closes with increasing disorder, enabling a direct transition from a normal band insulator to a WSM. We determine the phase diagram by numerically computing the localization length and the Hall conductivity, and propose that the novel phase transitions can be realized on a photonic lattice. PMID:26705648

  9. Metal-insulator transition in nanocomposite VO{sub x} films formed by anodic electrodeposition

    SciTech Connect

    Tsui, Lok-kun; Lu, Jiwei; Zangari, Giovanni; Hildebrand, Helga; Schmuki, Patrik

    2013-11-11

    The ability to grow VO{sub 2} films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VO{sub x} films by anodic electrodeposition of V{sub 2}O{sub 5}, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO{sub 2} stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is observed between room temperature and 140 °C. In addition, the films exhibit a temperature coefficient of resistance of ∼ −2.4%/ °C from 20 to 140 °C.

  10. Universal Quantum Criticality in the Metal-Insulator Transition of Two-Dimensional Interacting Dirac Electrons

    NASA Astrophysics Data System (ADS)

    Otsuka, Yuichi; Yunoki, Seiji; Sorella, Sandro

    2016-01-01

    The metal-insulator transition has been a subject of intense research since Mott first proposed that the metallic behavior of interacting electrons could turn to an insulating one as electron correlations increase. Here, we consider electrons with massless Dirac-like dispersion in two spatial dimensions, described by the Hubbard models on two geometrically different lattices, and perform numerically exact calculations on unprecedentedly large systems that, combined with a careful finite-size scaling analysis, allow us to explore the quantum critical behavior in the vicinity of the interaction-driven metal-insulator transition. Thereby, we find that the transition is continuous, and we determine the quantum criticality for the corresponding universality class, which is described in the continuous limit by the Gross-Neveu model, a model extensively studied in quantum field theory. Furthermore, we discuss a fluctuation-driven scenario for the metal-insulator transition in the interacting Dirac electrons: The metal-insulator transition is triggered only by the vanishing of the quasiparticle weight, not by the Dirac Fermi velocity, which instead remains finite near the transition. This important feature cannot be captured by a simple mean-field or Gutzwiller-type approximate picture but is rather consistent with the low-energy behavior of the Gross-Neveu model.

  11. Voltage-induced Metal-Insulator Transitions in Perovskite Oxide Thin Films Doped with Strongly Correlelated Electrons

    NASA Astrophysics Data System (ADS)

    Wang, Yudi; Gil Kim, Soo; Chen, I.-Wei

    2007-03-01

    We have observed a reversible metal-insulator transition in perovskite oxide thin films that can be controlled by charge trapping pumped by a bipolar voltage bias. In the as-fabricated state, the thin film is metallic with a very low resistance comparable to that of the metallic bottom electrode, showing decreasing resistance with decreasing temperature. This metallic state switches to a high-resistance state after applying a voltage bias: such state is non-ohmic showing a negative temperature dependence of resistance. Switching at essentially the same voltage bias was observed down to 2K. The metal-insulator transition is attributed to charge trapping that disorders the energy of correlated electron states in the conduction band. By increasing the amount of charge trapped, which increases the disorder relative to the band width, increasingly more insulating states with a stronger temperature dependence of resistivity are accessed. This metal-insulator transition provides a platform to engineer new nonvolatile memory that does not require heat (as in phase transition) or dielectric breakdown (as in most other oxide resistance devices).

  12. Experimental Observation of a Metal-insulator Transition in 2D at Zero Magnetic Field

    NASA Astrophysics Data System (ADS)

    Kravchenko, S. V.

    1996-03-01

    The scaling theory of Abrahams et al. ^1 has had considerable success in describing many features of metal-insulator transitions. Within this theory, which was developed for non-interacting electrons, no such transition is possible in two-dimensional electron systems (2DES) in the absence of a magnetic field. However, we show experimentally that an ultra-high-mobility 2DES on the surface of silicon does exhibit the signature of a true metal-insulator phase transition at zero magnetic field at a critical electron density n_c ~10^11 cm-2. The energy of electron-electron interactions, ignored in the scaling theory,^1 is the dominant parameter in this 2DES. The resistivity, ρ, is empirically found to scale near the critical point both with temperature T and electric field E so that it can be represented by the form ρ(T,n_s)=ρ(T/T_0(n_s)) as Earrow0 or ρ(E,n_s)=ρ(E/E_0(n_s)) as Tarrow0. At the transition, the resistivity is close to 3h/e^2. Both scaling parameters, T0 and E_0, show power law behavior at the critical point. This is characteristic of a true phase transition and strongly resembles, in particular, the superconductor-insulator transition in disordered thin films,^2 as well as the transition between quantum Hall liquid and insulator.^3 Many high-mobility samples from two different sources (Institute for Metrological Service, Russia, and Siemens AG, Germany) with different oxide thicknesses and gate materials have been studied and similar results were found. Work done in collaboration with J. E. Furneaux, Whitney Mason, V. M. Pudalov, and M. D'Iorio, supported by NSF. ^1 E. Abrahams, P. W. Anderson, D. C. Licciardello, and T. V. Ramakrishnan, Phys. Rev. Lett. 42, 673 (1979). ^2 Y. Liu, K. A. McGreer, B. Nease, D. B. Haviland, G. Martinez, J. W. Halley, and A. M. Goldman, Phys. Rev. Lett. 67, 2068 (1991). ^3 T. Wang, K. P. Clark, G. F. Spencer, A. M. Mack, and W. P. Kirk, Phys. Rev. Lett. 72, 709 (1994).

  13. Metal-insulator transition by holographic charge density waves.

    PubMed

    Ling, Yi; Niu, Chao; Wu, Jian-Pin; Xian, Zhuo-Yu; Zhang, Hongbao

    2014-08-29

    We construct a gravity dual for charge density waves (CDWs) in which the translational symmetry along one spatial direction is spontaneously broken. Our linear perturbation calculation on the gravity side produces the frequency dependence of the optical conductivity, which exhibits the two familiar features of CDWs, namely, the pinned collective mode and gapped single-particle excitation. These two features indicate that our gravity dual also provides a new mechanism to implement the metal to insulator phase transition by CDWs, which is further confirmed by the fact that dc conductivity decreases with the decreased temperature below the critical temperature. PMID:25215974

  14. Metal-insulator transition by holographic charge density waves.

    PubMed

    Ling, Yi; Niu, Chao; Wu, Jian-Pin; Xian, Zhuo-Yu; Zhang, Hongbao

    2014-08-29

    We construct a gravity dual for charge density waves (CDWs) in which the translational symmetry along one spatial direction is spontaneously broken. Our linear perturbation calculation on the gravity side produces the frequency dependence of the optical conductivity, which exhibits the two familiar features of CDWs, namely, the pinned collective mode and gapped single-particle excitation. These two features indicate that our gravity dual also provides a new mechanism to implement the metal to insulator phase transition by CDWs, which is further confirmed by the fact that dc conductivity decreases with the decreased temperature below the critical temperature.

  15. Electrothermal actuation of metal-insulator transition in SmNiO3 thin film devices above room temperature

    NASA Astrophysics Data System (ADS)

    Ha, Sieu D.; Viswanath, B.; Ramanathan, Shriram

    2012-06-01

    We demonstrate that a metal-insulator phase transition can be electrothermally actuated in the correlated complex oxide SmNiO3 (SNO) above room temperature from current-voltage measurements on thin film two-terminal devices. We simulate the internal temperature of SmNiO3 as a function of applied dc power by a Joule heating mechanism with substrate/electrode dissipation and find good agreement with experiment and device scaling. The results are relevant towards integrating correlated oxide phase transition functionality into semiconductor electronic/optoelectronic platforms.

  16. Metal-insulator transitions and superconductivity in ditetramethyltetraselenafulvalenium flourosulfonate ((TMTSF)/sub 2/FSO/sub 3/)

    SciTech Connect

    Lacoe, R.C.; Wolf, S.A.; Chaikin, P.M.; Wudl, F.; Aharon-Shalom, E.

    1983-02-01

    We have investigated the phase diagram of the organic charge-transfer salt ditetramethyltetraselenafulvalenium flourosulfonate ((TMTSF)/sub 2/FSO/sub 3/) which contains an asymmetric dipolar anion. At low pressures there is a metal-insulator transition related to anion ordering. Between 5 and 6 kbar, there is a dipolar glass phase with increased resistivity. However, thermopower and superconducting measurements indicate that the Fermi surface remains ungapped. Above 5 kbar there is a superconducting transition with T/sub c/>2 K. This is the highest T/sub c/ for this family of compounds and suggests that the anions can enhance T/sub c/.

  17. Antiferromagnetic, metal-insulator, and superconducting phase transitions in underdoped cuprates: Slave-fermion t-J model in the hopping expansion

    SciTech Connect

    Shimizu, Akihiro; Aoki, Koji; Ichinose, Ikuo; Sakakibara, Kazuhiko; Matsui, Tetsuo

    2011-02-01

    We study a system of doped antiferromagnet in three dimensions at finite temperatures using the t-J model, a canonical model of strongly correlated electrons. We employ the slave-fermion representation of electrons, in which an electron is described as a composite of a charged spinless holon and a chargeless spinon. We introduce two kinds of U(1) gauge fields on links as auxiliary fields, one describing resonating valence bonds of antiferromagnetic nearest-neighbor spin pairs and the other for nearest-neighbor hopping amplitudes of holons and spinons in the ferromagnetic channel. To perform a numerical study of the system, we integrate out the fermionic holon field by using the hopping expansion in powers of the hopping amplitude, which is legitimate for the region in and near the insulating phase. The resultant effective model is described in terms of bosonic spinons, two U(1) gauge fields, and a collective field for hole pairs. We study this model by means of Monte Carlo simulations, calculating the specific heat, spin correlation functions, and instanton densities. We obtain a phase diagram in the hole concentration-temperature plane, which is in good agreement with that observed recently for clean and homogeneous underdoped samples.

  18. Percolative metal-insulator transition in LaMnO3

    NASA Astrophysics Data System (ADS)

    Sherafati, M.; Baldini, M.; Malavasi, L.; Satpathy, S.

    2016-01-01

    We show that the pressure-induced metal-insulator transition (MIT) in LaMnO3 is fundamentally different from the Mott-Hubbard transition and is percolative in nature, with the measured resistivity obeying the percolation scaling laws. Using the Gutzwiller method to treat correlation effects in a model Hamiltonian that includes both Coulomb and Jahn-Teller interactions, we show, one, that the MIT is driven by a competition between electronic correlation and the electron-lattice interaction, an issue that has been long debated, and two, that with compressed volume, the system has a tendency towards phase separation into insulating and metallic regions, consisting, respectively, of Jahn-Teller distorted and undistorted octahedra. This tendency manifests itself in a mixed phase of intermixed insulating and metallic regions in the experiment. Conduction in the mixed phase occurs by percolation and the MIT occurs when the metallic volume fraction, steadily increasing with pressure, exceeds the percolation threshold vc≈0.29 . Measured high-pressure resistivity follows the percolation scaling laws quite well, and the temperature dependence follows the Efros-Shklovskii variable-range hopping behavior for granular materials.

  19. Electrocaloric effect of metal-insulator transition in VO{sub 2}

    SciTech Connect

    Matsunami, Daichi; Fujita, Asaya

    2015-01-26

    The electrocaloric effect was observed in association with an electric-field induced metal-insulator transition in VO{sub 2} using a calorimetric measurement under an applied voltage. For a VO{sub 2} plate with a 0.4 mm thickness located in the center of a capacitor-like structure, the metal-insulator transition was manipulated by applying a few volts. The occurrence of a transition in such a thick sample with relatively low voltage indicates that a surface charge accumulation mechanism is effective. The isothermal entropy change reached 94 J kg{sup −1} K{sup −1}, while the adiabatic temperature change was calculated as −3.8 K under a voltage change of 0–3 V. The large entropy change is attributed to correlation of the complex freedom among spin, charge, and lattice.

  20. Oxygen vacancy induced metal-insulator transition in LaNiO3

    NASA Astrophysics Data System (ADS)

    Misra, Debolina; Kundu, Tarun Kumar

    2016-01-01

    First principle calculations were carried out to examine the metal-insulator transition in LaNiO3 due to changes in oxygen content and consequent alteration of valence state of nickel. The optical properties of all the oxygen deficient LaNiO3-x compounds were calculated to illustrate the electronic structures of the compounds and the change they undergo during the metal-insulator transition. The metallic nature of LaNiO3 is characterized by the Drude peak in the optical conductivity spectra and the high reflectivity it exhibits in the low frequency region. The complex dielectric function and the optical conductivity spectra clearly show that, for x = 0.25, i.e., LaNiO2.75 becomes a semiconductor. As x increases further to 0.5, a gap in the optical spectra appears, indicating the insulating nature of LaNiO2.5. The insulating state of LaNiO2.5 is best described by the GW+HSE method which gives a good estimation of the optical gap of the material. The absorption spectra of LaNiO2.5 clearly reveal that this material is transparent in the low frequency region. This metal-insulator transition is followed by another insulator to semiconductor transition, as x is increased further to 1 i.e., in case of LaNiO2. The metal-insulator transition is then explained on the basis of electron localization function calculations, which show the increase in the covalent bonding in the system as the transition to the insulating state sets in.

  1. Elastic behavior around metal-insulator transition in PrRu 4P 12

    NASA Astrophysics Data System (ADS)

    Nakanishi, Y.; Kumagai, T.; Oikawa, M.; Saha, S. R.; Sugawara, H.; Sato, H.; Yoshizawa, M.

    2006-03-01

    Elastic properties of PrRu 4P 12 have been investigated by means of the ultrasonic measurement. A clear bend was observed in elastic constants C11, (C11-C12)/2 and C44 at metal-insulator transition temperature TMI of 62.3 K. Furthermore, C11, and ( C11-C12)/2 exhibits a pronounced elastic softening towards low temperature in the temperature range down to 1.5 K. This fact suggests strongly that PrΓ3 non-Kramers doublet ground state is realized in PrRu 4P 12 under the crystalline electric field (CEF) potential. This also suggests that an orbital degree of freedom still remains below TMI and a quadrupolar ordering has nothing to do with the metal-insulator transition. The elastic property and 4f ground state of Pr ions in this system will be discussed from the view point of CEF effect.

  2. Infrared evidence of a Slater metal-insulator transition in NaOsO3

    PubMed Central

    Vecchio, I. Lo; Perucchi, A.; Di Pietro, P.; Limaj, O.; Schade, U.; Sun, Y.; Arai, M.; Yamaura, K.; Lupi, S.

    2013-01-01

    The magnetically driven metal-insulator transition (MIT) was predicted by Slater in the fifties. Here a long-range antiferromagnetic (AF) order can open up a gap at the Brillouin electronic band boundary regardless of the Coulomb repulsion magnitude. However, while many low-dimensional organic conductors display evidence for an AF driven MIT, in three-dimensional (3D) systems the Slater MIT still remains elusive. We employ terahertz and infrared spectroscopy to investigate the MIT in the NaOsO3 3D antiferromagnet. From the optical conductivity analysis we find evidence for a continuous opening of the energy gap, whose temperature dependence can be well described in terms of a second order phase transition. The comparison between the experimental Drude spectral weight and the one calculated through Local Density Approximation (LDA) shows that electronic correlations play a limited role in the MIT. All the experimental evidence demonstrates that NaOsO3 is the first known 3D Slater insulator. PMID:24141899

  3. Metal-Insulator Transition in nanoparticle solids: a kinetic Monte Carlo study

    NASA Astrophysics Data System (ADS)

    Zimanyi, Gergely; Qu, Luman; Voros, Marton

    Nanoparticle (NP) solids recently emerged as a promising platform for high performance electronic/optoelectronic devices, including third generation solar cells, light emitting diodes and field effect transistors. A challenge of NP films is that their charge transport is in the unfavorable hopping/insulating regime. Recent experiments showed that it is possible to tune the NP solids through a Metal-Insulator Transition (MIT) via ligand engineering and ALD matrix infilling. However, the microscopic understanding of this transition is not yet clear. To address this challenge, we developed a Kinetic Monte Carlo transport modeling framework that builds on determining NP parameters from ab initio-based calculations of the energy level structures, charging energies and overlaps, and then uses these to compute the hopping mobility across a disordered NP array by the Marcus and Miller-Abrahams mechanisms. We reproduced and explained the observed non-monotonous dependence of the mobility on the NP diameter. Centrally, we extended our platform to be able to capture the MIT. We determined the MIT phase boundary on the (NP-NP overlap - Electron density) plane. We demonstrated that all mobilities fall on a universal scaling curve, allowing us to determine the critical behavior across the MIT. Supported by: UC Davis Office of Research RISE ANSWER Grant.

  4. Unraveling metal-insulator transition mechanism of VO₂ triggered by tungsten doping.

    PubMed

    Tan, Xiaogang; Yao, Tao; Long, Ran; Sun, Zhihu; Feng, Yajuan; Cheng, Hao; Yuan, Xun; Zhang, Wenqing; Liu, Qinghua; Wu, Changzheng; Xie, Yi; Wei, Shiqiang

    2012-01-01

    Understanding the mechanism of W-doping induced reduction of critical temperature (T(C)) for VO(2) metal-insulator transition (MIT) is crucial for both fundamental study and technological application. Here, using synchrotron radiation X-ray absorption spectroscopy combined with first-principles calculations, we unveil the atomic structure evolutions of W dopant and its role in tailoring the T(C) of VO(2) MIT. We find that the local structure around W atom is intrinsically symmetric with a tetragonal-like structure, exhibiting a concentration-dependent evolution involving the initial distortion, further repulsion, and final stabilization due to the strong interaction between doped W atoms and VO(2) lattices across the MIT. These results directly give the experimental evidence that the symmetric W core drives the detwisting of the nearby asymmetric monoclinic VO(2) lattice to form rutile-like VO(2) nuclei, and the propagations of these W-encampassed nuclei through the matrix lower the thermal energy barrier for phase transition.

  5. Control of the Metal-Insulator Transition at Complex Oxide Heterointerfaces through Visible Light.

    PubMed

    Lin, Jheng-Cyuan; Tra, Vu Thanh; Tsai, Dung-Sheng; Lin, Tai-Te; Huang, Po-Cheng; Hsu, Wei-Lun; Wu, Hui Jun; Huang, Rong; Van Chien, Nguyen; Yoshida, Ryuji; Lin, Jiunn-Yuan; Ikuhara, Yuichi; Chiu, Ya-Ping; Gwo, Shangjr; Tsai, Din Ping; He, Jr-Hau; Chu, Ying-Hao

    2016-01-27

    The coupling of the localized surface plasmon resonance of Au nanoparticles is utilized to deliver a visible-light stimulus to control conduction at the LaAlO3 /SrTiO3 interface. A giant photoresponse and the controllable metal-insulator transition are characterized at this heterointerface. This study paves a new route to optical control of the functionality at the heterointerfaces.

  6. Temperature dependence of thermal conductivity of VO2 thin films across metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Kizuka, Hinako; Yagi, Takashi; Jia, Junjun; Yamashita, Yuichiro; Nakamura, Shinichi; Taketoshi, Naoyuki; Shigesato, Yuzo

    2015-05-01

    Thermal conductivity of a 300-nm-thick VO2 thin film and its temperature dependence across the metal-insulator phase transition (TMIT) were studied using a pulsed light heating thermoreflectance technique. The VO2 and Mo/VO2/Mo films with a VO2 thickness of 300 nm were prepared on quartz glass substrates: the former was used for the characterization of electrical properties, and the latter was used for the thermal conductivity measurement. The VO2 films were deposited by reactive rf magnetron sputtering using a V2O3 target and an Ar-O2 mixture gas at 645 K. The VO2 films consisted of single phase VO2 as confirmed by X-ray diffraction and electron beam diffraction. With increased temperature, the electrical resistivity of the VO2 film decreased abruptly from 6.3 × 10-1 to 5.3 × 10-4 Ω cm across the TMIT of around 325-340 K. The thermal conductivity of the VO2 film increased from 3.6 to 5.4 W m-1 K-1 across the TMIT. This discontinuity and temperature dependence of thermal conductivity can be explained by the phonon heat conduction and the Wiedemann-Franz law.

  7. Metal-insulator transition in epitaxial perovskite SrIrO3 thin films via strain

    NASA Astrophysics Data System (ADS)

    Gruenewald, J. H.; Terzic, J.; Nichols, J.; Cao, G.; Seo, S. S. A.

    2014-03-01

    Iridates have drawn considerable interest due to their exotic phases arising from the interplay of the strong spin-orbit interaction and the electronic correlation. Here we will discuss our experimental investigations of the electronic properties of epitaxially strained SrIrO3 thin-films. The orthorhombic perovskite crystal phase of SrIrO3 is synthesized as a thin film (~ 20 nm) on various substrates of (LaAlO3)0.3-(Sr2AlTaO6)0.7, SrTiO3, GdScO3, and MgO using pulsed laser deposition. We have observed that when the in-plane lattice parameters are tuned from tensile to compressive strain, the electronic behavior of the strained SrIrO3 thin-films changes from metallic to insulating. All samples have sheet resistance below 13 k Ω/ □, and the insulating samples were fit using the Mott variable-range-hopping equation at low temperatures (< 15 K), which is believed to be the conducing mechanism of Anderson localization at finite temperature. The strain-dependent metal-insulator transition in epitaxial perovskite SrIrO3 thin-films offers an important insight into the electronic structure of these strongly correlated, spin-orbit-coupled materials. This work was supported by grants EPS-0814194, DMR-0856234, DMR-1265162, and KSEF-148-502-12-303.

  8. Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide

    NASA Astrophysics Data System (ADS)

    Booth, Jamie M.; Drumm, Daniel W.; Casey, Phil S.; Smith, Jackson S.; Seeber, Aaron J.; Bhargava, Suresh K.; Russo, Salvy P.

    2016-05-01

    Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure’s crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices.

  9. Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide

    PubMed Central

    Booth, Jamie M.; Drumm, Daniel W.; Casey, Phil S.; Smith, Jackson S.; Seeber, Aaron J.; Bhargava, Suresh K.; Russo, Salvy P.

    2016-01-01

    Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure’s crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices. PMID:27211303

  10. Oxygen Vacancy Induced Room-Temperature Metal-Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics.

    PubMed

    Wang, Le; Dash, Sibashisa; Chang, Lei; You, Lu; Feng, Yaqing; He, Xu; Jin, Kui-juan; Zhou, Yang; Ong, Hock Guan; Ren, Peng; Wang, Shiwei; Chen, Lang; Wang, Junling

    2016-04-20

    Oxygen vacancy is intrinsically coupled with magnetic, electronic, and transport properties of transition-metal oxide materials and directly determines their multifunctionality. Here, we demonstrate reversible control of oxygen content by postannealing at temperature lower than 300 °C and realize the reversible metal-insulator transition in epitaxial NdNiO₃ films. Importantly, over 6 orders of magnitude in the resistance modulation and a large change in optical bandgap are demonstrated at room temperature without destroying the parent framework and changing the p-type conductive mechanism. Further study revealed that oxygen vacancies stabilized the insulating phase at room temperature is universal for perovskite nickelate films. Acting as electron donors, oxygen vacancies not only stabilize the insulating phase at room temperature, but also induce a large magnetization of ∼50 emu/cm³ due to the formation of strongly correlated Ni²⁺ t(2g)⁶e(g)² states. The bandgap opening is an order of magnitude larger than that of the thermally driven metal-insulator transition and continuously tunable. Potential application of the newly found insulating phase in photovoltaics has been demonstrated in the nickelate-based heterojunctions. Our discovery opens up new possibilities for strongly correlated perovskite nickelates.

  11. Nano-optical investigations of the metal-insulator phase behavior of individual VO(2) microcrystals.

    PubMed

    Jones, Andrew C; Berweger, Samuel; Wei, Jiang; Cobden, David; Raschke, Markus B

    2010-05-12

    Despite the relatively simple stoichiometry and structure of VO(2), many questions regarding the nature of its famous metal-insulator transition (MIT) remain unresolved. This is in part due to the prevailing use of polycrystalline film samples and the limited spatial resolution in most studies, hindering access to and control of the complex phase behavior and its inevitable spatial inhomogeneities. Here, we investigate the MIT and associated nanodomain formation in individual VO(2) microcrystals subject to substrate stress. We employ symmetry-selective polarization Raman spectroscopy to identify crystals that are strain-stabilized in either the monoclinic M1 or M2 insulating phase at room-temperature. Raman measurements are further used to characterize the phase dependence on temperature, identifying the appearance of the M2 phase during the MIT. The associated formation and spatial evolution of rutile (R) metallic domains is studied with nanometer-scale spatial resolution using infrared scattering-scanning near-field optical microscopy (s-SNOM). We deduce that even for small crystals of VO(2), the MIT is influenced by the competition between the R, M1, and M2 crystal phases with their different lattice constants subjected to the external substrate-induced stress. The results have important implications for the interpretation of the investigations of conventional polycrystalline thin films where the mutual interaction of constituent crystallites may affect the nature of the MIT in VO(2).

  12. Control of plasmonic nanoantennas by reversible metal-insulator transition

    DOE PAGESBeta

    Abate, Yohannes; Marvel, Robert E.; Ziegler, Jed I.; Gamage, Sampath; Javani, Mohammad H.; Stockman, Mark I.; Haglund, Richard F.

    2015-09-11

    We demonstrate dynamic reversible switching of VO2 insulator-to-metal transition (IMT) locally on the scale of 15 nm or less and control of nanoantennas, observed for the first time in the near-field. Using polarization-selective near-field imaging techniques, we simultaneously monitor the IMT in VO2 and the change of plasmons on gold infrared nanoantennas. Structured nanodomains of the metallic VO2 locally and reversibly transform infrared plasmonic dipole nanoantennas to monopole nanoantennas. Fundamentally, the IMT in VO2 can be triggered on femtosecond timescale to allow ultrafast nanoscale control of optical phenomena. In conclusion, these unique features open up promising novel applications in activemore » nanophotonics.« less

  13. Control of plasmonic nanoantennas by reversible metal-insulator transition

    SciTech Connect

    Abate, Yohannes; Marvel, Robert E.; Ziegler, Jed I.; Gamage, Sampath; Javani, Mohammad H.; Stockman, Mark I.; Haglund, Richard F.

    2015-09-11

    We demonstrate dynamic reversible switching of VO2 insulator-to-metal transition (IMT) locally on the scale of 15 nm or less and control of nanoantennas, observed for the first time in the near-field. Using polarization-selective near-field imaging techniques, we simultaneously monitor the IMT in VO2 and the change of plasmons on gold infrared nanoantennas. Structured nanodomains of the metallic VO2 locally and reversibly transform infrared plasmonic dipole nanoantennas to monopole nanoantennas. Fundamentally, the IMT in VO2 can be triggered on femtosecond timescale to allow ultrafast nanoscale control of optical phenomena. In conclusion, these unique features open up promising novel applications in active nanophotonics.

  14. Metallic behavior and metal insulator transition of two-dimensional holes in gallium arsenide

    NASA Astrophysics Data System (ADS)

    Gao, Xuan

    This thesis is an investigation of the anomalous metallic behavior and metal-insulator transition (MIT) of low density two dimensional (2D) holes in gallium arsenide (GaAs) quantum well. The prevailing one parameter scaling theory of localization for disordered 2D Fermi liquids predicts an insulating ground state at zero magnetic field for small rs---the ratio of Coulomb interaction energy over the Fermi energy. On the other hand, metallic-like temperature (T) dependent transport has been observed in various high mobility Fermionic 2D systems with high rs. Exploring the electronic transport of high mobility hole gas in 2D GaAs quantum wells down to 10mKelvin temperature range, we find that weak localization or single particle quantum interference is greatly suppressed in both the temperature dependence of the resistance and the low field magnetoresistance. We observe that a parallel magnetic field B11 applied in the 2D plane does not affect T *, the temperature/energy scale of the metallic resistance drop of the system, although it suppresses the magnitude of the resistance drop. Furthermore, the temperature dependent conductivity of 2D holes in a strong B 11 agrees with the Coulomb interaction theory of a spin polarized Fermi liquid in both the diffusive (T < h/k Btau) and ballistic (T > h/ kBtau) transport regime, with r being the momentum relaxation time. Our transport data are consistent with the phase separation scenario. Driven by the competition between kinetic energy and Coulomb potential energy, the 2D hole liquid phase separates into a mixture of the localized 2D Fermi liquid phase and a metallic phase below T*. The 2D MIT at zero magnetic field in turn could be due to the localized Fermi liquid phase percolates through the metallic phase as disorder strength increases.

  15. Metal-insulator transition induced in CaVO{sub 3} thin films

    SciTech Connect

    Gu Man; Laverock, Jude; Chen, Bo; Smith, Kevin E.; Wolf, Stuart A.; Lu Jiwei

    2013-04-07

    Stoichiometric CaVO{sub 3} (CVO) thin films of various thicknesses were grown on single crystal SrTiO{sub 3} (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 {mu}A. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film ({approx}60 nm), thin films of CVO (2-4 nm) were more two-dimensional with the V charge state closer to V{sup 4+}.

  16. The metal-insulator transition in trivalent-ion-doped tungsten bronzes.

    PubMed

    Kasl, C; Hoch, M J R

    2014-02-12

    Electrical transport measurements have been made on a series of trivalent-ion-doped tungsten bronzes MxWO3, with M = Y (0.05 ≤ x ≤ 0.12) or La (0.05 ≤ x ≤ 0.19), over the temperature range 2-300 K. The results are consistent with a metal-insulator transition (MIT) at a critical concentration xC ≃ 0.06, which corresponds to an electron concentration nC ≃ 3.3 × 10(21) cm(-3). The appearance of small concentrations of non-cubic phases for x ∼ xC does not have a significant impact on the evolution of the electronic properties of the trivalent bronzes in the low x range. Analysis of the transport results, and a comparison of the findings with those obtained by other workers for the sodium tungsten bronzes, suggest that electron-electron interaction effects play a significant role in inducing the MIT in this type of disordered system.

  17. Chaos in fermionic many-body systems and the metal-insulator transition

    SciTech Connect

    Papenbrock, T.; Pluhar, Z.; Tithof, J.; Weidenmueller, H. A.

    2011-03-15

    We show that finite Fermi systems governed by a mean field and a few-body interaction generically possess spectral fluctuations of the Wigner-Dyson type and are, thus, chaotic. Our argument is based on an analogy to the metal-insulator transition. We construct a sparse random-matrix scaffolding ensemble (ScE) that mimics this transition. Our claim then follows from the fact that the generic random-matrix ensemble modeling a fermionic interacting many-body system is much less sparse than ScE.

  18. Chaos in Fermionic Many-Body Systems and the Metal Insulator Transition

    SciTech Connect

    Papenbrock, Thomas F; Pluhar, Z.; Tithof, J.; Weidenmueller, H. A.

    2011-01-01

    We show that finite Fermi systems governed by a mean field and a few-body interaction generically possess spectral fluctuations of the Wigner-Dyson type and are thus chaotic. Our proof is based on an analogy to the metal-insulator transition. We construct a sparse random-matrix ensemble H^{cr} that mimicks that transition. Our claim then follows from the fact that the generic random-matrix ensemble modeling a fermionic interacting many-body is much less sparse than H^{cr}.

  19. The electrochemical impact on electrostatic modulation of the metal-insulator transition in nickelates

    SciTech Connect

    Bubel, Simon; Glaudell, Anne M.; Mates, Thomas E.; Chabinyc, Michael L.; Hauser, Adam J.; Stemmer, Susanne

    2015-03-23

    For physical studies of correlated electron systems and for realizing novel device concepts, electrostatic modulation of metal-insulator transitions (MITs) is desired. The inherently high charge densities needed to modulate MITs make this difficult to achieve. The high capacitance of ionic liquids are attractive but, voltages are needed that can be in excess of the electrochemical stability of the system. Here, we show temperature/resistivity data that suggest electrostatic modulation of the MIT temperature of NdNiO{sub 3} in a wide regime. However, additional voltammetric and x-ray photoelectron spectroscopy measurements demonstrate the electrochemical impact of the electrostatic doping approach with ionic liquids.

  20. Comprehensive studies of interfacial strain and oxygen vacancy on metal-insulator transition of VO2 film

    NASA Astrophysics Data System (ADS)

    Fan, L. L.; Chen, S.; Liao, G. M.; Chen, Y. L.; Ren, H.; Zou, C. W.

    2016-06-01

    As a typical strong correlation material, vanadium dioxide (VO2) has attracted wide interest due to its particular metal-insulator transition (MIT) property. However, the relatively high critical temperature (T c) of ~68 °C seriously hinders its practical applications. Thus modulating the phase transition process and decreasing the T c close to room temperature have been hot topics for VO2 study. In the current work, we conducted a multi-approach strategy to control the phase transition of VO2 films, including the interfacial tensile/compressive strain and oxygen vacancies. A synchrotron radiation reciprocal space mapping technique was used to directly record the interfacial strain evolution and variations of lattice parameters. The effects of interfacial strain and oxygen vacancies in the MIT process were systematically investigated based on band structure and d-orbital electron occupation. It was suggested that the MIT behavior can be modulated through the combined effects of the interfacial strain and oxygen vacancies, achieving the distinct phase transition close to room temperature. The current findings not only provide better understanding for strain engineering and oxygen vacancies controlling phase transition behavior, but also supply a combined way to control the phase transition of VO2 film, which is essential for VO2 film based device applications in the future.

  1. Comprehensive studies of interfacial strain and oxygen vacancy on metal-insulator transition of VO2 film.

    PubMed

    Fan, L L; Chen, S; Liao, G M; Chen, Y L; Ren, H; Zou, C W

    2016-06-29

    As a typical strong correlation material, vanadium dioxide (VO2) has attracted wide interest due to its particular metal-insulator transition (MIT) property. However, the relatively high critical temperature (T c) of ~68 °C seriously hinders its practical applications. Thus modulating the phase transition process and decreasing the T c close to room temperature have been hot topics for VO2 study. In the current work, we conducted a multi-approach strategy to control the phase transition of VO2 films, including the interfacial tensile/compressive strain and oxygen vacancies. A synchrotron radiation reciprocal space mapping technique was used to directly record the interfacial strain evolution and variations of lattice parameters. The effects of interfacial strain and oxygen vacancies in the MIT process were systematically investigated based on band structure and d-orbital electron occupation. It was suggested that the MIT behavior can be modulated through the combined effects of the interfacial strain and oxygen vacancies, achieving the distinct phase transition close to room temperature. The current findings not only provide better understanding for strain engineering and oxygen vacancies controlling phase transition behavior, but also supply a combined way to control the phase transition of VO2 film, which is essential for VO2 film based device applications in the future.

  2. Redox chemistry and metal-insulator transitions intertwined in a nano-porous material.

    PubMed

    Maximoff, Sergey N; Smit, Berend

    2014-06-06

    Metal-organic frameworks are nano-porous adsorbents of relevance to gas separation and catalysis, and separation of oxygen from air is essential to diverse industrial applications. The ferrous salt of 2,5-dihydroxy-terephthalic acid, a metal-organic framework of the MOF74 family, can selectively adsorb oxygen in a manner that defies the classical picture: adsorption sites either do or do not share electrons over a long range. Here we propose, and then justify phenomenologically and computationally, a mechanism. Charge-transfer-mediated adsorption of electron acceptor oxygen molecules in the metal-organic framework, which is a quasi-one-dimensional electron-donor semiconductor, drives and is driven by quasi-one-dimensional metal-insulator-metal transitions that localize or delocalize the quasi-one-dimensional electrons. This mechanism agrees with the empirical evidence, and predicts a class of nano-porous semiconductors or metals and potential adsorbents and catalysts in which chemistry and metal-insulator-metal transitions intertwine.

  3. Dynamically tracking the joule heating effect on the voltage induced metal-insulator transition in VO2 crystal film

    NASA Astrophysics Data System (ADS)

    Liao, G. M.; Chen, S.; Fan, L. L.; Chen, Y. L.; Wang, X. Q.; Ren, H.; Zhang, Z. M.; Zou, C. W.

    2016-04-01

    Insulator to metal phase transitions driven by external electric field are one of the hottest topics in correlated oxide study. While this electric triggered phenomena always mixes the electric field switching effect and joule thermal effect together, which are difficult to clarify the intrinsic mechanism. In this paper, we investigate the dynamical process of voltage-triggered metal-insulator transition (MIT) in a VO2 crystal film and observe the temperature dependence of the threshold voltages and switching delay times, which can be explained quite well based on a straightforward joule thermal model. By conducting the voltage controlled infrared transmittance measurement, the delayed infrared transmission change is also observed, further confirming the homogeneous switching process for a large-size film. All of these results show strong evidences that joule thermal effect plays a dominated role in electric-field-induced switching of VO2 crystal.

  4. Metal-insulator-transition in SrTiO3 induced by argon bombardment combined with field effect

    SciTech Connect

    Xu, Jie; Zhu, Zhengyong; Zhao, Hengliang; Luo, Zhijiong

    2014-12-15

    By fabricating the Field-Effect-Transistors on argon bombardment SrTiO3 substrates, not only we have achieved one of the best mobility for Field-Effect-Transistors fabricated on SrTiO3, but also realized strong field induced Metal-Insulator-Transition. The critical sheet resistance for the Metal-Insulator-Transition is only 1/7 of the value obtained in the former experiments, indicating a different mechanism. Further study shows that the Metal-Insulator-Transition can be attributed to the oxygen vacancies formed after the bombardment becoming the electron donor under the electric field modulation, increasing SrTiO3 surface electron density and transforming the substrate into metallic state.

  5. Electronic Excitations and Metal-Insulator Transition inPoly(3-hexylthiophene) Organic Field-Effect Transistors

    SciTech Connect

    Sai, N.; Li, Z.Q.; Martin, M.C.; Basov, D.N.; Di Ventra, M.

    2006-11-07

    We carry out a comprehensive theoretical and experimentalstudy of charge injection in poly(3-hexylthiophene) (P3HT) to determinethe most likely scenario for metal-insulator transition in this system.Wecalculate the optical-absorption frequencies corresponding to a polaronand a bipolaron lattice in P3HT. We also analyze the electronicexcitations for three possible scenarios under which a first- or asecond-order metal-insulator transition can occur in doped P3HT. Thesetheoretical scenarios are compared with data from infrared absorptionspectroscopy on P3HT thin-film field-effect transistors (FETs). Ourmeasurements and theoretical predictions suggest that charge-inducedlocalized states in P3HT FETs are bipolarons and that the highest dopinglevel achieved in our experiments approaches that required for afirst-order metal-insulator transition.

  6. Charge Mediated Reversible Metal-Insulator Transition in Monolayer MoTe2 and WxMo1-xTe2 Alloy.

    PubMed

    Zhang, Chenxi; Kc, Santosh; Nie, Yifan; Liang, Chaoping; Vandenberghe, William G; Longo, Roberto C; Zheng, Yongping; Kong, Fantai; Hong, Suklyun; Wallace, Robert M; Cho, Kyeongjae

    2016-08-23

    Metal-insulator transitions in low-dimensional materials under ambient conditions are rare and worth pursuing due to their intriguing physics and rich device applications. Monolayer MoTe2 and WTe2 are distinguished from other TMDs by the existence of an exceptional semimetallic distorted octahedral structure (T') with a quite small energy difference from the semiconducting H phase. In the process of transition metal alloying, an equal stability point of the H and the T' phase is observed in the formation energy diagram of monolayer WxMo1-xTe2. This thermodynamically driven phase transition enables a controlled synthesis of the desired phase (H or T') of monolayer WxMo1-xTe2 using a growth method such as chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). Furthermore, charge mediation, as a more feasible method, is found to make the T' phase more stable than the H phase and induce a phase transition from the H phase (semiconducting) to the T' phase (semimetallic) in monolayer WxMo1-xTe2 alloy. This suggests that a dynamic metal-insulator phase transition can be induced, which can be exploited for rich phase transition applications in two-dimensional nanoelectronics. PMID:27415610

  7. Role of magnetic and orbital ordering at the metal-insulator transition in NdNiO{sub 3}

    SciTech Connect

    Scagnoli, V.; Staub, U.; Mulders, A. M.; Janousch, M.; Meijer, G. I.; Hammerl, G.; Tonnerre, J. M.; Stojic, N.

    2006-03-01

    Soft x-ray resonant scattering at the Ni L{sub 2,3} edges is used to test models of magnetic- and orbital-ordering below the metal-insulator transition in NdNiO{sub 3}. The large branching ratio of the L{sub 3} to L{sub 2} intensities of the (1/2 0 1/2) reflection and the observed azimuthal angle and polarization dependence originates from a noncollinear magnetic structure. The absence of an orbital signal and the noncollinear magnetic structure show that the nickelates are materials for which orbital ordering is absent at the metal-insulator transition.

  8. The metal-insulator transition in vanadium dioxide explored by optical methods

    NASA Astrophysics Data System (ADS)

    Qazilbash, M. M.; Burch, K. S.; Basov, D. N.; Chae, B. G.; Kim, H. T.

    2006-03-01

    The nature of the metal-insulator transition (MIT) in vanadium dioxide (VO2) remains a matter of debate. At the center of the debate is the relative importance of electron-electron correlations to the MIT. We study the MIT with spectroscopic ellipsometry on VO2 films grown on sapphire substrates, and determine the optical constants in the insulating and metallic states from 50 meV to 5.5 eV. The changes in the optical constants with temperature in the metallic state have been tracked from 360 K up to 500 K. The redistribution of spectral weight in the real part of the optical conductivity as a result of the MIT will be discussed with emphasis on the changes to the interband transitions. This work has been supported by Department of Energy Grant No.DE-FG03-00ER45799.

  9. Metal-insulator transitions in non-stoichiometric, chromium, and titanium doped vanadium oxide thin films

    NASA Astrophysics Data System (ADS)

    Metcalf, Patricia Ann

    The major focus of the research was on the preparation of vanadium oxide thin films with metal-insulator transitions equivalent to those found in single crystals. Thin films of VO2, V1-x M'xO 2 (M' = Cr, Ti, Mo, W), V3O5, V6O 13, V2O3, and (V1-xMx) 2O3 (M = Cr, Ti) were prepared by the reduction of sol-gel derived vanadium oxide films in inert atmospheres. Subsequent anneals of un-doped V2O3 films in controlled oxygen atmosphere conditions yielded non-stoichiometric V2-yO3 films. In addition, thick films of V2O3 were produced using laser lift-off and particle embedding techniques. Vanadium oxide nano-crystals and nano-powders were synthesized via hydrothermal techniques for use as the embedded particle materials. The effect of thickness and orientation on the structure was examined in the V2O3 films. The majority of the films were grown on (0001)-oriented sapphire substrates, in addition films were grown on (11 20)-oriented sapphire, x and z-oriented-LiTaO3, (101)-oriented SiO2, and ZnSe substrates. V2O3 films with thicknesses of less than 450 nm grown on (0001)-oriented sapphire were shown to consist of well oriented, 10--100 nm diameter columnar grains when examined by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. Films deposited on (0001)-oriented sapphire were found to possess a preferred (0001) orientation and those deposited on (11 20)-oriented sapphire, a preferred (1120) orientation. The x-ray diffraction patterns indicated that other orientations were present for films thicker than 450 nm. The optical transmission and electrical conductivity measurements on films revealed metal-insulator transitions characteristic of single crystal V2O3, (V1-xCrx)2O 3, (V1-zTiz)2O3, V 2-yO3 and VO2. Upon cooling from room temperature, the V2O3 films displayed a reversible metal-insulator transition at about 150 K, with an increase in electrical resistivity of about 106 and a change in optical transmission of

  10. Mott metal-insulator transition in a metallic liquid - Gutzwiller molecular dynamics simulations

    NASA Astrophysics Data System (ADS)

    Barros, Kipton; Chern, Gia-Wei; Batista, Cristian D.; Kress, Joel D.; Kotliar, Gabriel

    2015-03-01

    Molecular dynamics (MD) simulations are crucial to modern computational physics, chemistry, and materials science, especially when combined with potentials derived from density-functional theory. However, even in state of the art MD codes, the on-site Coulomb repulsion is only treated at the self-consistent Hartree-Fock level. This standard approximation may miss important effects due to electron correlations. The Gutzwiller variational method captures essential correlated-electron physics yet is much faster than, e.g., the dynamical-mean field theory approach. We present our efficient Gutzwiller-MD implementation. With it, we investigate the Mott metal-insulator transition in a metallic fluid and uncover several surprising static and dynamic properties of this system.

  11. Hallmarks of Metal Insulator transition in Doped Sr2IrO4

    NASA Astrophysics Data System (ADS)

    Cao, Yue; Wang, Qiang; Dhaka, Rajendra; Waugh, Justin; Reber, Theodore; Li, Haoxiang; Parham, Stephen; Zhou, Xiaoqing; Park, Seung Ryong; Qi, Tongfei; Korneta, Oleksandr; Plumb, Nicholas; Bostwick, Aaron; Rotenberg, Eli; Denlinger, Jonathan; Hermele, Michael; Cao, Gang; Dessau, Daniel

    2014-03-01

    How Mott insulators acquire metallicity upon the introduction of extra carriers lies at the heart of correlated electron physics. The evolution of the electronic structure and low energy dynamics in the ultra-low doped region where the Mottness begins to break down is a critical place to study this physics. We report ARPES studies of the Rh and La doped Sr2IrO4 and show the appearance and evolution of a pseudogap and Fermi arcs. Further more we present evidence how the Mott gap breaks down with a profound change in the band structure. The experimental results in the doped iridates resemble those observed in the cuprate systems, which are prototype Mott insulators, and suggest we could establish a series of signatures that occur in the metal insulator transition. Now at Los Alamos National Lab.

  12. Switching adhesion forces by crossing the metal-insulator transition in Magnéli-type vanadium oxide crystals.

    PubMed

    Stegemann, Bert; Klemm, Matthias; Horn, Siegfried; Woydt, Mathias

    2011-01-01

    Magnéli-type vanadium oxides form the homologous series V(n)O(2) (n) (-1) and exhibit a temperature-induced, reversible metal-insulator first order phase transition (MIT). We studied the change of the adhesion force across the transition temperature between the cleavage planes of various vanadium oxide Magnéli phases (n = 3 … 7) and spherical titanium atomic force microscope (AFM) tips by systematic force-distance measurements with a variable-temperature AFM under ultrahigh vacuum conditions (UHV). The results show, for all investigated samples, that crossing the transition temperatures leads to a distinct change of the adhesion force. Low adhesion corresponds consistently to the metallic state. Accordingly, the ability to modify the electronic structure of the vanadium Magnéli phases while maintaining composition, stoichiometry and crystallographic integrity, allows for relating frictional and electronic material properties at the nano scale. This behavior makes the vanadium Magnéli phases interesting candidates for technology, e.g., as intelligent devices or coatings where switching of adhesion or friction is desired.

  13. Resistance noise spectroscopy across the thermally and electrically driven metal-insulator transitions in VO2 nanobeams

    NASA Astrophysics Data System (ADS)

    Alsaqqa, Ali; Kilcoyne, Colin; Singh, Sujay; Horrocks, Gregory; Marley, Peter; Banerjee, Sarbajit; Sambandamurthy, G.

    Vanadium dioxide (VO2) is a strongly correlated material that exhibits a sharp thermally driven metal-insulator transition at Tc ~ 340 K. The transition can also be triggered by a DC voltage in the insulating phase with a threshold (Vth) behavior. The mechanisms behind these transitions are hotly discussed and resistance noise spectroscopy is a suitable tool to delineate different transport mechanisms in correlated systems. We present results from a systematic study of the low frequency (1 mHz < f < 10 Hz) noise behavior in VO2 nanobeams across the thermally and electrically driven transitions. In the thermal transition, the power spectral density (PSD) of the resistance noise is unchanged as we approach Tc from 300 K and an abrupt drop in the magnitude is seen above Tc and it remains unchanged till 400 K. However, the noise behavior in the electrically driven case is distinctly different: as the voltage is ramped from zero, the PSD gradually increases by an order of magnitude before reaching Vth and an abrupt increase is seen at Vth. The noise magnitude decreases above Vth, approaching the V = 0 value. The individual roles of percolation, Joule heating and signatures of correlated behavior will be discussed. This work is supported by NSF DMR 0847324.

  14. Functionalized graphene as a model system for the two-dimensional metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Osofsky, M. S.; Hernández, S. C.; Nath, A.; Wheeler, V. D.; Walton, S. G.; Krowne, C. M.; Gaskill, D. K.

    2016-02-01

    Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all 2D systems must be insulating. The existence of a metallic state for such a wide range of 2D systems thus reveals a wide gap in our understanding of 2D transport that has become more important as research in 2D systems expands. A key to understanding the 2D metallic state is the metal-insulator transition (MIT). In this report, we explore the nature of a disorder induced MIT in functionalized graphene, a model 2D system. Magneto-transport measurements show that weak-localization overwhelmingly drives the transition, in contradiction to theoretical assumptions that enhanced electron-electron interactions dominate. These results provide the first detailed picture of the nature of the transition from the metallic to insulating states of a 2D system.

  15. Systematics in the metal-insulator transition temperatures in vanadium oxides

    NASA Astrophysics Data System (ADS)

    Fisher, B.; Genossar, J.; Reisner, G. M.

    2016-01-01

    Nine of the known vanadium oxides, VO 2 - 1 / n (n - a positive or negative integer) with n = 2 - 6 , 8 , 9 , ∞ and -6, undergo metal-insulator transitions accompanied by structural transitions, at various temperatures TMIT (V7O13 is metallic above T=0). Among the persistent efforts to determine the driving force(s) of these transitions, electron-electron (Mott-like) and electron-phonon (Peierls-like) interactions, there were several attempts to find systematics in TMIT as function of n. Here we present an unexpectedly simple and illuminating systematics that holds for positive n: if TMIT is the absolute value of the difference between TM(n) and TP(n), which represent the contributions of electron-electron and electron-phonon interactions, respectively, all data points of TM-TP versus 1/n lie on, or close to, two simple straight lines; one is TM -TP =T∞(7 / n - 1) for V3O5, V4O7, V5O9, V7O13, V8O15, V9O17 and VO2 and the other is TM -TP =T∞(3 / n - 1) for V2O3, V6O11 and VO2.

  16. Functionalized graphene as a model system for the two-dimensional metal-insulator transition

    PubMed Central

    Osofsky, M. S.; Hernández, S. C.; Nath, A.; Wheeler, V. D.; Walton, S. G.; Krowne, C. M.; Gaskill, D. K.

    2016-01-01

    Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all 2D systems must be insulating. The existence of a metallic state for such a wide range of 2D systems thus reveals a wide gap in our understanding of 2D transport that has become more important as research in 2D systems expands. A key to understanding the 2D metallic state is the metal-insulator transition (MIT). In this report, we explore the nature of a disorder induced MIT in functionalized graphene, a model 2D system. Magneto-transport measurements show that weak-localization overwhelmingly drives the transition, in contradiction to theoretical assumptions that enhanced electron-electron interactions dominate. These results provide the first detailed picture of the nature of the transition from the metallic to insulating states of a 2D system. PMID:26860789

  17. Metal-insulator transition in low dimensional La{sub 0.75}Sr{sub 0.25}VO{sub 3} thin films

    SciTech Connect

    Dao, Tran M.; Mondal, Partha S.; Takamura, Y.; Arenholz, E.; Lee, Jaichan

    2011-06-15

    We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin La{sub 0.75}Sr{sub 0.25}VO{sub 3} films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electronelectron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization.

  18. Phase modulation in horizontal metal-insulator-silicon-insulator-metal plasmonic waveguides.

    PubMed

    Zhu, Shiyang; Lo, G Q; Kwong, D L

    2013-04-01

    An extremely compact Si phase modulator is proposed and validated, which relies on effective modulation of the real part of modal index of horizontal metal-insulator-Si-insulator-metal plasmonic waveguides by a voltage applied between the metal cover and the Si core. Proof-of-concept devices are fabricated on silicon-on-insulator substrates using standard complementary metal-oxide-semiconductor technology using copper as the metal and thermal silicon dioxide as the insulator. A modulator with a 1-μm-long phase shifter inserted in an asymmetric Si Mach-Zehnder interferometer exhibits 9-dB extinction ratio under a 6-V/10-kHz voltage swing. Numerical simulations suggest that high speed and low driving voltage could be achieved by shortening the distance between the Si core and the n(+)-contact and by using a high-κ dielectric as the insulator, respectively.

  19. Electric field gating near the metal-insulator transition using ionic liquid dielectrics

    NASA Astrophysics Data System (ADS)

    Hebard, Arthur; Misra, Rajiv; McCarthy, Mitchell

    2007-03-01

    Ionic liquids (ILs) are highly polar low-melting-temperature binary salts typically comprising nitrogen-containing organic cations and inorganic anions. Since there is no solvent, ILs are distinctly different from aqueous, organic, gel or polymer electrolytes. Using either coplanar or overlay gate configurations in which the IL is the gate dielectric, we demonstrate room temperature field-induced resistance changes on the order of a factor of 10^4 for thin conducting InOx films. There is a large asymmetry manifested by the significantly larger changes in impedance for negative gate voltage Vg (electron depletion) compared to positive Vg (electron enhancement). The pronounced frequency dependence over the range 10-2--10^6 Hz, due to the low ionic mobilities in the dielectric fluid, is modeled well by a simple RC circuit from which an effective areal gate capacitance can be derived. The induced surface charge densities and field-effect mobilities noticeably exceed those that can be achieved on similar films using AlOx dielectrics. In addition, the charge state can be frozen in by reducing the temperature below the glass transition (˜250K) of the IL, thus providing an opportunity for electric field tuning of metal-insulator transitions in a variety of novel thin-film systems.

  20. ARPES studies on metal-insulator-transition in NiS2-xSex

    NASA Astrophysics Data System (ADS)

    Han, Garam; Kim, Y. K.; Kyung, W. S.; Kim, Chul; Koh, Y. Y.; Lee, K. D.; Kim, C.

    2012-02-01

    Understanding Metal insulator transition (MIT) is one of the most challenging issues in condensed matter physics. NiS2-xSex (NSS) is a well known system for band width controlled MIT studies while most of High-Tc superconductors (HTSCs) are described within band filling MIT picture. Cubic pyrite NiS2 is known as a charge-transfer (CT) insulator and easily forms a solid solution with NiSe2, which is a good metal even though it is isostrucural and isoelectronic to NiS2. MIT is induced by Se alloying and is observed at a low temperature for x=0.5. The important merit is that there is no structure transition which often accompanies MIT. In spite of the importance of the system, even the experimental band dispersion is not known so far along with many controversies. For this reason, we performed angle resolved photoemission spectroscopy on high quality single crystals and successfully obtained Fermi surface maps of x=0.5, x=0.7 and x=0.8 systems (the metallic side). By doping dependent systematic studies on NSS and comparison with LDA calculation, we try to explain the relationship between band width and the MIT.

  1. Linear-in-temperature resistivity close to a topological metal insulator transition in ultra-multi valley fcc-ytterbium

    NASA Astrophysics Data System (ADS)

    Enderlein, Carsten; Fontes, Magda; Baggio-Saitovich, Elisa; Continentino, Mucio A.

    2016-01-01

    The semimetal-to-semiconductor transition in fcc-Yb under modest pressure can be considered a picture book example of a metal-insulator transition of the Lifshitz type. We have performed transport measurements at low temperatures in the closest vicinity of the transition and related DFT calculations of the Fermi surface. Our resistivity measurements show a linear temperature dependence with an unusually low dρ / dT at low temperatures approaching the MIT. The calculations suggest fcc-ytterbium being an ultra-multi valley system with 24 electron and 6 hole pockets in the Brillouin zone. Such Fermi surface topology naturally supports the appearance of strongly correlated phases. An estimation of the quasiparticle-enhanced effective mass shows that the scattering rate is by at least two orders of magnitude lower than in other materials which exhibit linear-in-T behavior at a quantum critical point. However, we cannot exclude an excessive effective mass enhancement, when the van Hove singularity touches the Fermi level.

  2. Magnetic Superstructure and Metal-Insulator Transition in Mn-Substituted Sr3Ru2O7

    NASA Astrophysics Data System (ADS)

    Hossain, M. A.; Bohnenbuck, B.; Chuang, Y.-D.; Geck, J.; Tokura, Y.; Yoshida, Y.; Hussain, Z.; Keimer, B.; Sawatzky, G. A.; Damascelli, A.

    2010-03-01

    We present a temperature-dependent resonant elastic soft x-ray scattering (REXS) study of the metal-insulator transition in Sr3(Ru1-xMnx)2O7, performed at both Ru and Mn L-edges. Resonant magnetic superstructure reflections, which indicate an incipient instability of the parent compound, are detected below the transition. Based on modelling of the REXS intensity from randomly distributed Mn impurities, we establish the inhomogeneous nature of the metal-insulator transition, with an effective percolation threshold corresponding to an anomalously low x˜0.05 Mn substitution. In collaboration with A.G. Cruz Gonzalez, J.D. Denlinger (Berkeley Lab), I. Zegkinoglou, M.W. Haverkort (MPI, Stuttgart), I.S. Elfimov, D.G. Hawthorn (UBC), R. Mathieu, S. Satow, H. Takagi (Tokyo), H.-H. Wu and C. Sch"ußler-Langeheine (Cologne).

  3. Phonon modes and metal-insulator transition in GaN crystals under pressure

    NASA Astrophysics Data System (ADS)

    Falkovsky, L. A.; Knap, W.; Chervin, J. C.; Wisniewski, P.

    1998-05-01

    Close inspection of experimental results given by Perlin and co-workers [Phys. Status Solidi B 198, 223 (1996); Phys. Rev. B 45, 83 (1992)] shows that three phenomena were observed in that work: optical-phonon shift and splitting under pressures, which can be explained in a symmetry consideration for the Γ point of hexagonal crystals; inhomogeneous broadening and shift of phonon frequencies due to strain fluctuations which are described in the present paper using Dyson's equation for the phonon Green's function; phonon hardening and decreasing of width in the metal-insulator transition in GaN under pressure of about 22 GPa. The last effect results from the interaction between electrons and optical phonons, but this interaction makes no impact on the line shape (Fano effect). We find that the phonon line shape in semiconductors with small carrier concentration is determined by strain fluctuations or imperfections. Estimates show that the electron-phonon interaction is the reason why optical phonons are not detected in typical metals.

  4. Unusual behaviour of thermal conductivity in vanadium dioxide across the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Hippalgaonkar, Kedar; Lee, Sangwook; Ko, Changhyun; Yang, Fan; Suh, Joonki; Liu, Kai; Wang, Kevin; Zhang, Xiang; Dames, Chris; Wu, Junqiao

    In an electrically conductive solid, the Wiedemann-Franz (WF) law requires the electronic contribution to thermal conductivity to be proportional to the product of electrical conductivity and absolute temperature , where the ratio is the Lorenz number, typically not much different from the Sommerfeld value L0 = 2.44x10-8 W-ohm-K-2 at room temperature. The WF law reflects a basic property of metals where charge and heat are both carried by the same quasiparticles that both experience elastic scattering. At temperatures below the Debye temperature, the WF law has been experimentally shown to be robust in conventional conductors, with violations theoretically predicted or experimentally observed in strongly correlated electron systems or Luttinger liquids. However, the experimentally observed violations are at very low temperatures. Here we report breakdown of the WF law in a strongly correlated metal, in which the electronic thermal conductivity and L nearly vanish at temperatures above room temperature, where the electronic thermal conductivity amounts to only <~5% of the value expected from the WF law. Unusual behaviour of thermal conductivity in vanadium dioxide across the metal-insulator transition.

  5. Magnetic and Transport Properties of Amorphous GdGe Alloys near the Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Sinenian, Nareg; Smith, D. J.

    2005-03-01

    The temperature and field dependence of magnetization and conductivity of amorphous Ge doped with the rare earth Gd (a-GdxGe1-x) has been measured for a range of x near the metal-insulator transition 0.08 < x <0.25). As in previous work on a-Gd-Si, high field magnetization and low field susceptibility per Gd atom in the paramagnetic state above the spin glass freezing temperature are significantly suppressed below that of non-interacting Gd, indicative of strong antiferromagnetic interactions. However, unlike a-Gd-Si, the low field susceptibility does not fit a Curie-Weiss law, instead showing 1/T^α dependence. As in a-Gd-Si, Gd causes localization of charge carriers below a characteristic temperature T*, which is also an onset of significant negative magnetoresistance MR. Both T* and the magnitude of MR are however significantly less in a-Gd-Ge than in comparable a-Gd-Si alloys. It is suggested that the large effects of matrix (Ge vs Si) are due to differences in dielectric constant and bandgap, which cause changes in screening, thereby altering the effect of the magnetic moments of Gd on both localization of carriers and on the indirect mediated Gd-Gd exchange interactions. We thank the NSF for support.

  6. Carbon kagome lattice and orbital-frustration-induced metal-insulator transition for optoelectronics.

    PubMed

    Chen, Yuanping; Sun, Y Y; Wang, H; West, D; Xie, Yuee; Zhong, J; Meunier, V; Cohen, Marvin L; Zhang, S B

    2014-08-22

    A three-dimensional elemental carbon kagome lattice, made of only fourfold-coordinated carbon atoms, is proposed based on first-principles calculations. Despite the existence of 60° bond angles in the triangle rings, widely perceived to be energetically unfavorable, the carbon kagome lattice is found to display exceptional stability comparable to that of C(60). The system allows us to study the effects of triangular frustration on the electronic properties of realistic solids, and it demonstrates a metal-insulator transition from that of graphene to a direct gap semiconductor in the visible blue region. By minimizing s-p orbital hybridization, which is an intrinsic property of carbon, not only the band edge states become nearly purely frustrated p states, but also the band structure is qualitatively different from any known bulk elemental semiconductors. For example, the optical properties are similar to those of direct-gap semiconductors GaN and ZnO, whereas the effective masses are comparable to or smaller than those of Si.

  7. Metal-insulator transitions in LaTiO3 / CaTiO3 superlattices

    NASA Astrophysics Data System (ADS)

    Seo, Sung Seok A.; Lee, Ho Nyung

    2010-03-01

    Strongly correlated electrons at an interface of complex oxide heterostructures often show interesting behaviors that require an introduction of new physical concepts. For example, the metallic transport behavior found in the superlattices of a Mott insulator LaTiO3 and a band insulator SrTiO3 (STO) has established the concept of interfacial electronic reconstruction. In this work, we have studied the transport property of a new type of Mott/band insulator LaTiO3/CaTiO3 (LTO/CTO) superlattices grown by pulsed laser deposition (PLD). In order to rule out concerns about the PLD plume-triggered oxygen vacancies generated in STO substrates, which might influence transport measurement, and to investigate the effect of epitaxial strain, we have used insulating NdGaO3 substrates. While both LTO and CTO single films are highly insulating, we have observed intriguing metal-insulator transitions (MIT) in the LTO/CTO superlattices depending on the global LTO/CTO thickness ratio and temperature. (Note that LTO/STO superlattices are metallic at all temperatures (2-300 K)). In this talk, we will discuss the origin of the MIT in the scheme of self compensation mechanism of d-electrons at the hetero-interface between LTO and CTO.

  8. Variation of optical conductivity spectra in the course of bandwidth-controlled metal-insulator transitions in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Ueda, K.; Fujioka, J.; Tokura, Y.

    2016-06-01

    We spectroscopically investigate a series of pyrochlore iridates R2Ir2O7 (R : rare-earth and Y ions) where the metal-insulator transitions are induced by systematic bandwidth control via chemical substitutions of R ions. We establish the phase diagram of R2Ir2O7 , as endorsed by the variation of the optical conductivity spectra, in which the competing phases including paramagnetic insulator (PI), paramagnetic metal (PM), and antiferromagnetic insulator (AFI) show up as a function of bandwidth and temperature. For small R -ionic radius (R = Y-Sm), i.e., strongly correlated region, pronounced peaks on the edge of the optical gap are discerned below the magnetic transition temperature TN, which is attributable to exciton and magnon sideband absorptions. It turns out that the estimated nearest-neighbor exchange interaction increases as R -ionic radius increases, whereas TN monotonically decreases, indicating that the all-in all-out magnetic order arises from the interplay among several exchange interactions inherent to extended 5 d orbitals on the frustrated lattice. For larger R -ionic radius (R = Sm-Pr), i.e., relatively weakly correlated region, the optical conductivity spectra markedly change below 0.3 eV in the course of PM-AFI transition, implying that the magnetic order induces the insulating state. In particular, we have found distinct electrodynamics in the composition of R =Nd0.5Pr0.5 which is located on the boundary of the quantum PM-AFI transition, pointing to the possible emergence of unconventional topological electronic phases related possibly to the correlated Weyl electrons.

  9. Heteroepitaxial VO{sub 2} thin films on GaN: Structure and metal-insulator transition characteristics

    SciTech Connect

    Zhou You; Ramanathan, Shriram

    2012-10-01

    Monolithic integration of correlated oxide and nitride semiconductors may open up new opportunities in solid-state electronics and opto-electronics that combine desirable functional properties of both classes of materials. Here, we report on epitaxial growth and phase transition-related electrical properties of vanadium dioxide (VO{sub 2}) thin films on GaN epitaxial layers on c-sapphire. The epitaxial relation is determined to be (010){sub vo{sub 2}} parallel (0001){sub GaN} parallel (0001){sub A1{sub 2O{sub 3}}} and [100]{sub vo{sub 2}} parallel [1210]{sub GaN} parallel [0110]{sub A1{sub 2O{sub 3}}} from x-ray diffraction. VO{sub 2} heteroepitaxial growth and lattice mismatch are analyzed by comparing the GaN basal plane (0001) with the almost close packed corrugated oxygen plane in vanadium dioxide and an experimental stereographic projection describing the orientation relationship is established. X-ray photoelectron spectroscopy suggests a slightly oxygen rich composition at the surface, while Raman scattering measurements suggests that the quality of GaN layer is not significantly degraded by the high-temperature deposition of VO{sub 2}. Electrical characterization of VO{sub 2} films on GaN indicates that the resistance changes by about four orders of magnitude upon heating, similar to epitaxial VO{sub 2} films grown directly on c-sapphire. It is shown that the metal-insulator transition could also be voltage-triggered at room temperature and the transition threshold voltage scaling variation with temperature is analyzed in the framework of a current-driven Joule heating model. The ability to synthesize high quality correlated oxide films on GaN with sharp phase transition could enable new directions in semiconductor-photonic integrated devices.

  10. Metal-insulator transition in Nd1-xEuxNiO3: Entropy change and electronic delocalization

    NASA Astrophysics Data System (ADS)

    Jardim, R. F.; Barbeta, V. B.; Andrade, S.; Escote, M. T.; Cordero, F.; Torikachvili, M. S.

    2015-05-01

    The metal-insulator (MI) phase transition in Nd1-xEuxNiO3, 0 ≤ x ≤ 0.35, has been investigated through the pressure dependence of the electrical resistivity ρ(P, T) and measurements of specific heat CP(T). The MI transition temperature (TMI) increases with increasing Eu substitution and decreases with increasing pressure. Two distinct regions for the Eu dependence of dTMI/dP were found: (i) for x ≤ 0.15, dTMI/dP is nearly constant and ˜-4.3 K/kbar; (ii) for x ≥ 0.15, dTMI/dP increases with x and it seems to reach a saturation value ˜-6.2 K/kbar for the x = 0.35 sample. This change is accompanied with a strong decrease in the thermal hysteresis in ρ(P, T) between the cooling and warming cycles, observed in the vicinity of TMI. The entropy change (ΔS) at TMI for the sample x = 0, estimated by using the dTMI/dP data and the Clausius-Clapeyron equation, resulted in ΔS ˜ 1.2 J/mol K, a value in line with specific heat measurements. When the Eu concentration is increased, the antiferromagnetic (AF) and the MI transitions are separated in temperature, permitting that an estimate of the entropy change due to the AF/Paramagnetic transition be carried out, yielding ΔSM ˜ 200 mJ/mol K. This value is much smaller than that expected for a s = 1/2 spin system. The analysis of ρ(P, T) and CP(T) data indicates that the entropy change at TMI is mainly due to the electronic delocalization and not related to the AF transition.

  11. Metal-insulator transition of valence-controlled VO2 thin film prepared by RF magnetron sputtering using oxygen radical

    NASA Astrophysics Data System (ADS)

    Suetsugu, Takaaki; Shimazu, Yuichi; Tsuchiya, Takashi; Kobayashi, Masaki; Minohara, Makoto; Sakai, Enju; Horiba, Koji; Kumigashira, Hiroshi; Higuchi, Tohru

    2016-06-01

    We have prepared b-axis-oriented VO2 thin films by RF magnetron sputtering using oxygen radicals as the reactive gas. The VO2 thin films consist of a mixed-valence V3+/V4+ state formed by oxygen vacancies. The V3+ ratio strongly depends on the film thickness and the oxygen partial pressure of the radical gun during deposition. The lattice constant of the b-axis increases and the metal-insulator transition (MIT) temperature decreases with decreasing V3+ ratio, although the VO2 thin films with a high V3+ ratio of 42% do not exhibit MIT. The bandwidths and spectral weights of V 3d a1g and \\text{e}\\text{g}σ bands at around the Fermi level, which correspond to the insulating phase at 300 K, are smaller in the VO2 thin films with a low V3+ ratio. These results indicate that the control of the mixed-valence V3+/V4+ state is important for the MIT of b-axis-oriented VO2 thin films.

  12. Dynamics of the metal-insulator transition of donor-doped SrTi O3

    NASA Astrophysics Data System (ADS)

    Meyer, René; Zurhelle, Alexander F.; De Souza, Roger A.; Waser, Rainer; Gunkel, Felix

    2016-09-01

    The electrical properties of donor-doped SrTi O3 (n -STO) are profoundly affected by an oxidation-induced metal-insulator transition (MIT). Here we employ dynamical numerical simulations to examine the high-temperature MIT of n -STO over a large range of time and length scales. The simulations are based on the Nernst-Planck equations, the continuity equations, and the Poisson equation, in combination with surface lattice disorder equilibria serving as time-dependent boundary conditions. The simulations reveal that n -STO, upon oxidation, develops a kinetic space charge region (SCR) in the near-surface region. The surface concentrations of the variously mobile defects (electrons, Sr vacancies, and O vacancies) are found to vary over time and to differ considerably from the values of the new equilibrium. The formation of the SCR in which electrons are strongly depleted occurs within nanoseconds, i.e., it yields a fast MIT in the near-surface region during the oxidation process. As a result of charge (over-)compensation by Sr vacancies incorporated at the surface of n -STO, this SCR is much more pronounced than conventionally expected. In addition, we find an anomalous increase of O vacancy concentration at the surface upon oxidation caused by the SCR. Our simulations show that the SCR fades in the long term as a result of the slow in-diffusion of Sr vacancies. We discuss implications for the electrical conductivity of n -STO crystals used as substrates for epitaxial oxide thin films, of n -STO thin films and interfaces, and of polycrystalline n -STO with various functionalities.

  13. Changes in the electronic structure and spin dynamics across the metal-insulator transition in La1 -xSrxCoO3

    NASA Astrophysics Data System (ADS)

    Smith, R. X.; Hoch, M. J. R.; Moulton, W. G.; Kuhns, P. L.; Reyes, A. P.; Boebinger, G. S.; Zheng, H.; Mitchell, J. F.

    2016-01-01

    The magnetoelectronic properties of La1 -xSrxCoO3 , which include giant magnetoresistance, are strongly dependent on the level of hole doping. The system evolves, with increasing x , from a spin glass insulator to a metallic ferromagnet with a metal-insulator (MI) transition at xC ˜0.18 . Nanoscale phase separation occurs in the insulating phase and persists, to some extent, into the just-metallic phase. The present experiments at 4.2 K have used 139139 La nuclear magnetic resonance to investigate the transition from hopping dynamics for x < xC to Korringa-like ferromagnetic metal behavior for x > xC. A marked decrease in the spin-lattice relaxation rate is found in the vicinity of xC as the MI transition is crossed. This behavior is accounted for in terms of the evolution of the electronic structure and dynamics with cluster size.

  14. Electrolysis-induced protonation of VO2 thin film transistor for the metal-insulator phase modulation

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Endo, Kenji; Ohta, Hiromichi

    2016-02-01

    Compared to state-of-the-art modulation techniques, protonation is the most ideal to control the electrical and optical properties of transition metal oxides (TMOs) due to its intrinsic non-volatile operation. However, the protonation of TMOs is not typically utilized for solid-state devices because of imperative high-temperature annealing treatment in hydrogen source. Although one solution for room temperature (RT) protonation of TMOs is liquid-phase electrochemistry, it is unsuited for practical purposes due to liquid-leakage problem. Herein we demonstrate solid-state RT-protonation of vanadium dioxide (VO2), which is a well-known thermochromic TMO. We fabricated the three terminal thin-film-transistor structure on an insulating VO2 film using a water-infiltrated nanoporous glass, which serves as a solid electrolyte. For gate voltage application, water electrolysis and protonation/deprotonation of VO2 film surface occurred, leading to reversible metal-insulator phase conversion of ~11-nm-thick VO2 layer. The protonation was clearly accompanied by the structural change from an insulating monoclinic to a metallic tetragonal phase. Present results offer a new route for the development of electro-optically active solid-state devices with TMO materials by engineering RT protonation.

  15. Ultracold fermions in a one-dimensional bipartite optical lattice: Metal-insulator transitions driven by shaking

    NASA Astrophysics Data System (ADS)

    Di Liberto, M.; Malpetti, D.; Japaridze, G. I.; Morais Smith, C.

    2014-08-01

    We theoretically investigate the behavior of a system of fermionic atoms loaded in a bipartite one-dimensional optical lattice that is under the action of an external time-periodic driving force. By using Floquet theory, an effective model is derived. The bare hopping coefficients are renormalized by zeroth-order Bessel functions of the first kind with different arguments for the nearest-neighbor and next-nearest-neighbor hopping. The insulating behavior characterizing the system at half filling in the absence of driving is dynamically suppressed, and for particular values of the driving parameter the system becomes either a standard metal or an unconventional metal with four Fermi points. The existence of the four-Fermi-point metal relies on the fact that, as a consequence of the shaking procedure, the next-nearest-neighbor hopping coefficients become significant compared to the nearest-neighbor ones. We use the bosonization technique to investigate the effect of on-site Hubbard interactions on the four-Fermi-point metal-insulator phase transition. Attractive interactions are expected to enlarge the regime of parameters where the unconventional metallic phase arises, whereas repulsive interactions reduce it. This metallic phase is known to be a Luther-Emery liquid (spin-gapped metal) for both repulsive and attractive interactions, contrary to the usual Hubbard model, which exhibits a Mott-insulator phase for repulsive interactions. Ultracold fermions in driven one-dimensional bipartite optical lattices provide an interesting platform for the realization of this long-studied four-Fermi-point unconventional metal.

  16. Disproportionation, Metal-Insulator Transition, and Critical Interaction Strength in Na1/2CoO2

    NASA Astrophysics Data System (ADS)

    Kunes, Jan

    2006-03-01

    Spontaneous breaking of symmetry is one of the key concepts of solid state physics related to phase transitions. Charge/spin density wave, or charge/spin ordering if the propagation vector is commensurate, are notorious examples of broken symmetry. The charge disproportionation in Na0.5CoO2 is the main theme of the present work. The results of LDA+U calculations will be presented, exhibiting a charge disproportionation transition at U 3eV. NaxCoO2 attracted considerable attention mainly due to superconductivity of its hydrated form Na0.3CoO2.1.3H2O [1]. Besides the superconductivity NaxCoO2 exhibits several intriguing properties throughout its phase diagram, such crossover from Pauli-like to Curie-Weiss susceptibility at x=0.5, spin-density wave around x=0.7 or several phase transitions for x=0.5 including metal-insulator transition, charge ordering and magnetic ordering [2]. The NaxCoO2 lattice consists of triangular CoO2 layers separated by Na layer. The mobility of Na ions and fractional occupation of Na sublattice provides an additional complication. Using LDA+U functional within FPLO [3] bandstructure method we have performed series of supercell calculations allowing for breaking of the symmetry between different Co sites. We have found that for large enough, but physically realistic, values of the on-site Coulomb interaction U the Co sublattice disproportionates into sites with formal valencies Co^4+ and Co^3+. We have found that at the same time a gap opens in the excitation spectrum. Details of the bandstructure across the transition as well as the driving forces of the transition in the LDA+U mean field picture will be discussed. [1] K. Takada et al., Nature (London) 422, 53 (2003).[2] M. L. Foo et al., Phys. Rev. Lett. 92, 247001 (2004).[3] K. Koepernik and H. Eschrig, Phys. Rev. B 59, 1743 (1999).

  17. Charge-density-wave ordering in the metal-insulator transition compound PrRu{sub 4}P{sub 12}

    SciTech Connect

    Lee, C.H.; Matsuhata, H.; Yamaguchi, H.; Sekine, C.; Kihou, K.; Suzuki, T.; Noro, T.; Shirotani, I.

    2004-10-15

    X-ray and electron diffraction measurements on the metal-insulator (M-I) transition compound PrRu{sub 4}P{sub 12} have revealed a periodic ordering of charge density around the Pr atoms. It is found that the ordering is associated with the onset of a low temperature insulator phase. These conclusions are supported by the facts that the space group of the crystal structure transforms from Im3 to Pm3 below the M-I transition temperature and also that the temperature dependence of the superlattice peaks in the insulator phase follows the squared BCS function. The M-I transition could be originated from the perfect nesting of the Fermi surface and/or the instability of the f electrons.

  18. Covalency, Excitons, Double Counting and the Metal-Insulator Transition in Transition Metal Oxides

    NASA Astrophysics Data System (ADS)

    Wang, Xin

    2012-02-01

    We present single-site dynamical mean-field studies of realistic models of transition metal oxides, including the cuprate superconductors and rare earth nickelates (in bulk and superlattice form). We include orbital multiplet effects and hybridization to ligands. We explicitly calculate the d-d exciton spectra for cuprates, finding sharp exciton lines in both metallic and insulating phases, which should be visible in experiments. We also find that the additional d3z^2-r^2 orbital does not contribute to an additional Fermi surface at any reasonable doping, in contradiction to previous slave-boson studies. The hybridization to ligands is shown to have crucial effects, for example suppressing the ferro-orbital order previously found in Hubbard model studies of nickelates. Hybridization to ligands is shown to be most naturally parametrized by the d-orbital occupancy. For cuprates and nickelates, insulating behavior is found to be present only for a very narrow range of d-occupancy, irrespective of the Coulomb repulsion. The d-occupancy predicted by standard band calculations is found to be very far from the values required to obtain an insulating phase, calling into question the interpretation of these materials as charge transfer insulators. [4pt] This work is done in collaboration with A.J. Millis, M.J. Han, C.A. Marianetti, L. de' Medici, and H.T. Dang, and is supported by NSF-DMR-1006282, the Army Office of Scientific Research, and the Condensed Matter Theory Center and CNAM at University of Maryland. [4pt] [1] X. Wang, H. T. Dang, and A. J. Millis, Phys. Rev. B 84, 014530 (2011).[0pt] [2] X. Wang, M. J. Han, L. de' Medici, C. A. Marianetti, and A. J. Millis, arXiv:1110.2782.[0pt] [3] M. J. Han, X. Wang, C. A. Marianetti, and A. J. Millis, Phys. Rev. Lett. 107, 206804 (2011).

  19. Positive-bias gate-controlled metal-insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics

    NASA Astrophysics Data System (ADS)

    Yajima, Takeaki; Nishimura, Tomonori; Toriumi, Akira

    2015-12-01

    The next generation of electronics is likely to incorporate various functional materials, including those exhibiting ferroelectricity, ferromagnetism and metal-insulator transitions. Metal-insulator transitions can be controlled by electron doping, and so incorporating such a material in transistor channels will enable us to significantly modulate transistor current. However, such gate-controlled metal-insulator transitions have been challenging because of the limited number of electrons accumulated by gate dielectrics, or possible electrochemical reaction in ionic liquid gate. Here we achieve a positive-bias gate-controlled metal-insulator transition near the transition temperature. A significant number of electrons were accumulated via a high-permittivity TiO2 gate dielectric with subnanometre equivalent oxide thickness in the inverse-Schottky-gate geometry. An abrupt transition in the VO2 channel is further exploited, leading to a significant current modulation far beyond the capacitive coupling. This solid-state operation enables us to discuss the electrostatic mechanism as well as the collective nature of gate-controlled metal-insulator transitions, paving the pathway for developing functional field effect transistors.

  20. Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures

    PubMed Central

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X.

    2014-01-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or ‘Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices. PMID:25088796

  1. Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

    PubMed

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X

    2014-01-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices. PMID:25088796

  2. Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures

    NASA Astrophysics Data System (ADS)

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X.

    2014-08-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or `Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

  3. Spin Correlations and the Mott-Hubbard Metal-Insulator Transition in Vanadium Trioxide: a Neutron Scattering Study.

    NASA Astrophysics Data System (ADS)

    Bao, Wei

    rm V_2O_3 is a canonical Mott system where strong correlations among electrons drive spectacular metal-insulator transitions and the metallic rm V_2O_3 has served as a prototype of the Brinkman-Rice strongly correlated Fermi liquid. Research in Mott-Hubbard systems has largely focused on charge dynamics. Spin dynamics is widely assumed as described by localized spin fluctuations on the grounds that the electrons in the metal are nearly localized near the Mott transition. Discovery of high T_{C} superconductivity in cuprates and the subsequent attribution of spin fluctuations in pairing electrons demand a better understanding of strongly correlated electron systems in general and spin dynamics of these systems in particular. Using magnetic neutron scattering, we discovered an incommensurate spin density wave in doping stabilized metallic V_{2-y}O _3 at low temperatures, which appears not to be directly related to the antiferromagnetic order in the insulating rm V_2O_3. This weak ordering phenomenon at low temperatures is accompanied by energetic spin fluctuations with large spectral weight throughout the paramagnetic metallic phase of rm V_2O_3, reflecting the itinerant nature of magnetism with an energy scale related to the Fermi energy, in contrast to the conventional k _{B}T ~ J of a localized -spin model, even on the verge of Mott transition. Spin fluctuations in the paramagnetic insulating (V _{1-x}Cr_{x })_2O_3 were discovered to relate to those of paramagnetic metallic rm V_2O_3 rather than to the antiferromagnetic order of the low temperature insulating phase. The short correlation length in the paramagnetic insulator was discovered to be controlled by a mechanism other than thermal spin fluctuations. This unusual property invalidates previous claims of explaining the phase diagram of rm V_2O_3 based on a one-band Hubbard model and indicates the important physical consequences of degenerate Hubbard bands in rm V_2O_3. Work in this dissertation was performed

  4. Metal-insulator transitions in two dimensions at zero magnetic field in a p-type gallium arsenide heterostructure

    NASA Astrophysics Data System (ADS)

    Dultz, Shane Cole

    Presented in this work is a comparative study of two different two dimensional systems in GaAs heterostructures. In the two dimensional hole system, electron-electron interactions are strong and possibly the reason for an anomolous temperature dependence in the resistivity that is reminiscent of metallic behavior which is known not to exist in a non-interacting two dimensional Fermi gas. The other system is an electron system where interactions are much weaker and whose properties have been understood in the context of Fermi liquid theory. In the first set of experiments, the delocalized states of the two dimensional hole system in a p-type GaAs heterostructure are tracked in density-magnetic field parameter space to find qualitatively very different behavior from what is found in the weakly interacting electron system. The lowest delocalized state which corresponds to the lowest Landau level in high magnetic fields, is found to float up in energy as the magnetic field is reduced to zero for the electron system. We found that there is an absence of this floating for the hole system and discuss this in the context of the recently discovered metal-insulator transition at B = 0. We further investigate the high temperature properties of the hole system by analyzing the resistivity to temperatures as high as 120 K to see how well the strongly interacting hole system fits what is expected from acoustic and optical phonon scattering. This is done over a wide range of densities and temperatures so that we could understand what sort of temperature dependence is truly considered anomolous in low temperatures. Finally, the compressibility of both systems is studied. An unequivocal signature for a phase transition is found in the compressibility measurements for the hole system with a temperature independent crossing point in the resistance of the gas occurring at the minimum of the inverse compressibility signal as a function of density (disorder). Differences in the way the

  5. Magnetic and Metal-Insulator Transition in natural Transition Metal Sulfides

    NASA Astrophysics Data System (ADS)

    Wang, Renxiong; Metz, Tristin; Liu, I.-Lin; Wang, Kefeng; Wang, Xiangfeng; Jeffries, J. R.; Saha, S. R.; Greene, R. L.; Paglione, J.; Santelli, C. C.; Post, J.,

    In collaboration with the Smithsonian Institution's National Museum of Natural History, we present detailed studies of a class of natural minerals with potential to harbor correlated behavior. Transition metal sulfide minerals, such as Bornite (Cu5FeS4), are an important family of compounds known for their thermoelectric properties. We will present low temperature experimental studies of magnetic transitions and focus on a compound that exhibits a metal to insulator transition concident with entrance to an antiferromagnetic ground state, suggesting a potentially interesting system with promise for realizing new correlated states of matter in a naturally occurring mineral.

  6. Bond formation effects on the metal-insulator transition in the half-filled kagome Hubbard model

    NASA Astrophysics Data System (ADS)

    Higa, Ryota; Asano, Kenichi

    2016-06-01

    We study the metal-insulator transition in the half-filled Hubbard model on a Kagome lattice using the variational cluster approximation. The strong coupling limit of the model corresponds to the S =1 /2 Kagome Heisenberg antiferromagnet, which is known to have a singlet ground state, although its detail is still debated. As the results of the cluster methods generally depend much on the choice of the unit cluster, we have chosen the clusters that are compatible with these singlet ground states in the strong coupling case found so far, which basically consist of even number of sites. It is found that the correlated electrons on the Kagome lattice have a strong tendency to form valence-bond structures, which are the resonation of electrons on a single bond or several bonds forming loops. The zero-temperature metal-insulator transition at some interaction strength is possibly driven by the formation of such short range valence bonds and shows a second order character, which is distinctive from the Brinkman-Rice scenario. The electrons on these valence bonds further localizes onto each site as the interaction increases, and the valence bonds of electrons finally turn into magnetic singlet bonds between localized S =1 /2 spins, which are consistent with the ground states of the Kagome antiferromagnet.

  7. Magnetic Superstructure and Metal-Insulator Transition in Mn-Substituted Sr3 Ru 2 O 7

    NASA Astrophysics Data System (ADS)

    Hossain, M. A.; Zhu, Z. H.; Bohnenbuck, B.; Chuang, Y.-D.; Yoshida, Y.; Hussain, Z.; Keimer, B.; Elfimov, I. S.; Sawatzky, G. A.; Damascelli, A.

    2011-03-01

    We present a temperature-dependent resonant elastic soft x-ray scattering (REXS) study of the metal-insulator transition in Sr 3 (Ru 1-x Mn x)2 O7 , performed at both Ru and Mn L -edges. Resonant magnetic superstructure reflections together with ab-initio density functional theory calculations identify the ground state as a spin checkerboard with blocks of 4 spins up and 4 spins down. Based on modelling of the REXS intensity from randomly distributed Mn impurities, we establish the inhomogeneous nature of the metal-insulator transition, with an effective percolation threshold corresponding to an anomalously low x ~ 0.05 Mn substitution. Perhaps more important, our results suggest that the same checkerboard instability might be present already in the parent compound Sr 3 Ru 2 O7 . In collaboration with: A.G. Cruz Gonzalez, J.D. Denlinger (Berkeley) I. Zegkinoglou, M.W. Haverkort (MPI) J. Geck, D.G. Hawthorn (UBC) R. Mathieu, Y. Tokura, S. Satow, H. Takagi (Tokyo) H.-H. Wu and C. Schussler-Langeheine (Cologne).

  8. Origin of the metal-insulator transition in ultrathin films of L a2 /3S r2 /3Mn O3

    NASA Astrophysics Data System (ADS)

    Liao, Zhaoliang; Li, Fengmiao; Gao, Peng; Li, Lin; Guo, Jiandong; Pan, Xiaoqing; Jin, R.; Plummer, E. W.; Zhang, Jiandi

    2015-09-01

    Many ultrathin films of transition metal oxides exhibit nonmetallic behavior, in contrast to their metallic bulk counterpart, thus displaying a metal-insulator transition (MIT) as the film thickness is reduced. The nature of this MIT has been a long-standing issue in the epitaxial oxide research community. Here, we report the processing dependence of the critical thickness (tc) of MIT and the origin of the insulating phase in L a2 /3S r1 /3Mn O3 (LSMO) films. A tc of 3 unit cells (u.c.) is achieved by minimizing oxygen vacancies under optimal growth conditions, diminishing the epitaxial strain with a tunable buffer layer and suppressing surface strain by film capping. The electrical transport measurements demonstrate that the nonmetallic behavior in LSMO thin films is an unavoidable result of localization initiated by inherent disorder but amplified by the reduction in dimensionality.

  9. Metal-Insulator Transition in VO_{2}: A DFT+DMFT Perspective.

    PubMed

    Brito, W H; Aguiar, M C O; Haule, K; Kotliar, G

    2016-07-29

    We present a theoretical investigation of the electronic structure of rutile (metallic) and M_{1} and M_{2} monoclinic (insulating) phases of VO_{2} employing a fully self-consistent combination of density functional theory and embedded dynamical mean field theory calculations. We describe the electronic structure of the metallic and both insulating phases of VO_{2}, and propose a distinct mechanism for the gap opening. We show that Mott physics plays an essential role in all phases of VO_{2}: undimerized vanadium atoms undergo classical Mott transition through local moment formation (in the M_{2} phase), while strong superexchange within V dimers adds significant dynamic intersite correlations, which remove the singularity of self-energy for dimerized V atoms. The resulting transition from rutile to dimerized M_{1} phase is adiabatically connected to the Peierls-like transition, but is better characterized as the Mott transition in the presence of strong intersite exchange. As a consequence of Mott physics, the gap in the dimerized M_{1} phase is temperature dependent. The sole increase of electronic temperature collapses the gap, reminiscent of recent experiments. PMID:27517782

  10. Metal-Insulator Transition in VO2 : A DFT +DMFT Perspective

    NASA Astrophysics Data System (ADS)

    Brito, W. H.; Aguiar, M. C. O.; Haule, K.; Kotliar, G.

    2016-07-01

    We present a theoretical investigation of the electronic structure of rutile (metallic) and M1 and M2 monoclinic (insulating) phases of VO2 employing a fully self-consistent combination of density functional theory and embedded dynamical mean field theory calculations. We describe the electronic structure of the metallic and both insulating phases of VO2 , and propose a distinct mechanism for the gap opening. We show that Mott physics plays an essential role in all phases of VO2 : undimerized vanadium atoms undergo classical Mott transition through local moment formation (in the M2 phase), while strong superexchange within V dimers adds significant dynamic intersite correlations, which remove the singularity of self-energy for dimerized V atoms. The resulting transition from rutile to dimerized M1 phase is adiabatically connected to the Peierls-like transition, but is better characterized as the Mott transition in the presence of strong intersite exchange. As a consequence of Mott physics, the gap in the dimerized M1 phase is temperature dependent. The sole increase of electronic temperature collapses the gap, reminiscent of recent experiments.

  11. Superconductivity and bandwidth-controlled Mott metal-insulator transition in 1T-TaS2-xSex

    NASA Astrophysics Data System (ADS)

    Ang, R.; Miyata, Y.; Ieki, E.; Nakayama, K.; Sato, T.; Liu, Y.; Lu, W. J.; Sun, Y. P.; Takahashi, T.

    2013-09-01

    We have performed high-resolution angle-resolved photoemission spectroscopy (ARPES) of layered chalcogenide 1T-TaS2-xSex to elucidate the electronic states especially relevant to the occurrence of superconductivity. We found a direct evidence for a Ta-5d-derived electron pocket associated with the superconductivity, which is fragile against a Mott-gap opening observed in the insulating ground state for S-rich samples. In particular, a strong electron-electron interaction-induced Mott gap driven by a Ta 5d orbital also exists in the metallic ground state for Se-rich samples, while finite ARPES intensity near the Fermi level likely originating from a Se 4p orbital survives, indicative of the orbital-selective nature of the Mott transition. Present results suggest that effective electron correlation and p-d hybridization play a crucial role to tune the superconductivity and Mott metal-insulator transition.

  12. Plasmonic effects on the laser-induced metal-insulator transition of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Ferrara, Davon W.; MacQuarrie, Evan R.; Nag, Joyeeta; Haglund, Richard F., Jr.

    2010-03-01

    Vanadium dioxide (VO2) is a strongly-correlated electron material with a well-known semiconducting to metallic phase transition that can be induced thermally, optically, or electrically. When switched to the high-temperature (T > 68°C) metallic phase, the greatest contrast in the optical properties occurs at wavelengths in the near-to-mid-infrared and beyond. In the visible to near-infrared, however, upon switching for wavelengths between ~500-1000 nm, VO2 transmits more light in the metallic phase. In this paper, we report studies of the effect of near-IR irradiation (785 nm) on lithographically prepared arrays of gold nanoparticles (NPs) covered with a thin film of VO2 and find that the presence of the NPs substantially lowers the laser threshold for low-power induction of the phase transition. Hybrid Au::VO2 structures were created by coating lithographically prepared arrays of gold nanoparticles (NPs) (diameters 140 and 200 nm, array spacing 450 nm) with 60 nm thick films of VO2 by pulsed laser deposition. Due to resonant absorption of the Au particle-plasmon resonance (PPR) at 785 nm, a temperature-dependent shift in the PPR can be generated by switching the VO2 from one phase to another. We have measured the switching behavior of VO2 and Au::VO2 structures using shuttered CW laser irradiation in order to study both optical and thermal mechanisms of the phase transition. Transient absorption measurements using a shuttered 785 nm pump laser corresponding to the PPR resonance of the Au NPs and 1550 nm CW probe show that the presence of the Au NPs lowers the threshold laser power required to induce the phase transition.

  13. Metal-insulator transition in SrTi{sub 1−x}V{sub x}O{sub 3} thin films

    SciTech Connect

    Gu, Man; Wolf, Stuart A.; Lu, Jiwei

    2013-11-25

    Epitaxial SrTi{sub 1−x}V{sub x}O{sub 3} (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization.

  14. Superconductor-Metal-Insulator transition in two dimensional Ta thin Films

    NASA Astrophysics Data System (ADS)

    Park, Sun-Gyu; Kim, Eunseong

    2013-03-01

    Superconductor-insulator transition has been induced by tuning film thickness or magnetic field. Recent electrical transport measurements of MoGe, Bi, Ta thin films revealed an interesting intermediate metallic phase which intervened superconducting and insulating phases at certain range of magnetic field. Especially, Ta thin films show the characteristic IV behavior at each phase and the disorder tuned intermediate metallic phase [Y. Li, C. L. Vicente, and J. Yoon, Physical Review B 81, 020505 (2010)]. This unexpected metallic phase can be interpreted as a consequence of vortex motion or contribution of fermionic quasiparticles. In this presentation, we report the scaling behavior during the transitions in Ta thin film as well as the transport measurements in various phases. Critical exponents v and z are obtained in samples with wide ranges of disorder. These results reveal new universality class appears when disorder exceeds a critical value. Dynamical exponent z of Superconducting sample is found to be 1, which is consistent with theoretical prediction of unity. z in a metallic sample is suddenly increased to be approximately 2.5. This critical exponent is much larger than the value found in other system and theoretical prediction. We gratefully acknowledge the financial support by the National Research Foundation of Korea through the Creative Research Initiatives.

  15. Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices.

    PubMed

    Li, Dasheng; Sharma, Abhishek A; Gala, Darshil K; Shukla, Nikhil; Paik, Hanjong; Datta, Suman; Schlom, Darrell G; Bain, James A; Skowronski, Marek

    2016-05-25

    DC and pulse voltage-induced metal-insulator transition (MIT) in epitaxial VO2 two terminal devices were measured at various stage temperatures. The power needed to switch the device to the ON-state decrease linearly with increasing stage temperature, which can be explained by the Joule heating effect. During transient voltage induced MIT measurement, the incubation time varied across 6 orders of magnitude. Both DC I-V characteristic and incubation times calculated from the electrothermal simulations show good agreement with measured values, indicating Joule heating effect is the cause of MIT with no evidence of electronic effects. The width of the metallic filament in the ON-state of the device was extracted and simulated within the thermal model. PMID:27136956

  16. Metal-insulator transition in SrTiO(3-x) thin films induced by frozen-out carriers.

    PubMed

    Liu, Z Q; Leusink, D P; Wang, X; Lü, W M; Gopinadhan, K; Annadi, A; Zhao, Y L; Huang, X H; Zeng, S W; Huang, Z; Srivastava, A; Dhar, S; Venkatesan, T; Ariando

    2011-09-30

    We report optical, electrical and magnetotransport properties of oxygen deficient SrTiO(3) (SrTiO(3-x)) thin films fabricated by pulsed laser deposition technique. The oxygen vacancies (O(vac)) in the thin film are expected to be uniform. By comparing its electrical properties to those of bulk SrTiO(3-x), it was found that O(vac) in bulk SrTiO(3-x) is far from uniform over the whole material. The metal-insulator transition (MIT) observed in the SrTiO(3-x) film was found to be induced by the carrier freeze-out effect. The low temperature frozen state can be reexcited by Joule heating, electric and intriguingly magnetic field. PMID:22112172

  17. Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices.

    PubMed

    Li, Dasheng; Sharma, Abhishek A; Gala, Darshil K; Shukla, Nikhil; Paik, Hanjong; Datta, Suman; Schlom, Darrell G; Bain, James A; Skowronski, Marek

    2016-05-25

    DC and pulse voltage-induced metal-insulator transition (MIT) in epitaxial VO2 two terminal devices were measured at various stage temperatures. The power needed to switch the device to the ON-state decrease linearly with increasing stage temperature, which can be explained by the Joule heating effect. During transient voltage induced MIT measurement, the incubation time varied across 6 orders of magnitude. Both DC I-V characteristic and incubation times calculated from the electrothermal simulations show good agreement with measured values, indicating Joule heating effect is the cause of MIT with no evidence of electronic effects. The width of the metallic filament in the ON-state of the device was extracted and simulated within the thermal model.

  18. Transferring MBE-grown topological insulator films to arbitrary substrates and metal-insulator transition via Dirac gap.

    PubMed

    Bansal, Namrata; Cho, Myung Rae; Brahlek, Matthew; Koirala, Nikesh; Horibe, Yoichi; Chen, Jing; Wu, Weida; Park, Yun Daniel; Oh, Seongshik

    2014-03-12

    Mechanical exfoliation of bulk crystals has been widely used to obtain thin topological insulator (TI) flakes for device fabrication. However, such a process produces only microsized flakes that are highly irregular in shape and thickness. In this work, we developed a process to transfer the entire area of TI Bi2Se3 thin films grown epitaxially on Al2O3 and SiO2 to arbitrary substrates, maintaining their pristine morphology and crystallinity. Transport measurements show that these transferred films have lower carrier concentrations and comparable or higher mobilities than before the transfer. Furthermore, using this process we demonstrated a clear metal-insulator transition in an ultrathin Bi2Se3 film by gate-tuning its Fermi level into the hybridization gap formed at the Dirac point. The ability to transfer large area TI films to any substrate will facilitate fabrication of TI heterostructure devices, which will help explore exotic phenomena such as Majorana fermions and topological magnetoelectricity.

  19. Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: Implications to ferromagnetism

    SciTech Connect

    Stone, P.R.; Alberi, K.; Tardif, S.K.Z.; Beeman, J.W.; Yu, K.M.; Walukiewicz, W.; Dubon, O.D.

    2008-02-07

    We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4percent of As by P induces a metal-insulator transition at a constant Mn doping of x=0.046 while the replacement of 0.4 percent As with N results in the crossover from metal to insulator for x=0.037. This remarkable behavior is consistent with a scenario in which holes located within an impurity band are scattered by alloy disorder in the anion sublattice. The shorter mean free path of holes, which mediate ferromagnetism, reduces the Curie temperature TC from 113 K to 60 K (100 K to 65 K) upon the introduction of 3.1 percent P (1percent N) into the As sublattice.

  20. Optically induced metal-insulator transition in gold::vanadium dioxide hybrid structures

    NASA Astrophysics Data System (ADS)

    Ferrara, Davon W.; Macquarrie, Evan R.; Nag, Joyeeta; Kaye, Anthony; Haglund, Richard F., Jr.

    2010-03-01

    Vanadium dioxide (VO2) is a strongly-correlated electron material with a well-known semi-conducting to metallic phase transition that can be induced thermally, optically, or electrically. By coating lithographically prepared arrays of gold nanoparticles (NPs) of diameters up to 200 nm with 60 nm thick films of VO2 via pulsed laser deposition, hybrid Au::VO2 structures were created. Due to the sensitivity of the Au particle-plasmon resonance (PPR), a temperature dependent shift in the PPR can be generated by switching the VO2 from one phase to another, creating a tunable plasmonic metamaterial. To study the low-power switching characteristics of these structures, transient absorption measurements were made using a chopped 780 nm pump laser, corresponding to the PPR resonance of the Au NPs, and 1550 nm CW probe. Additionally, pump-probe measurements were conducted on the structures using a Ti:sapphire oscillator with 100-fs pulses. Results show that the presence of Au NPs lowers the threshold laser power required to induce the phase transition. Finite element modeling was performed to better understand the complex thermodynamics of the structure.

  1. Confocal Raman microscopy across the metal-insulator transition of single vanadium dioxide nanoparticles.

    PubMed

    Donev, Eugenii U; Lopez, Rene; Feldman, Leonard C; Haglund, Richard F

    2009-02-01

    We present the first Raman scattering measurements on nanoparticulate vanadium dioxide (VO(2)), as well as the first observations of the temperature-induced phase transition in individual VO(2) nanoparticles (NPs). We compare the Raman response of two VO(2) NPs and a companion VO(2) film undergoing their monoclinic-tetragonal-monoclinic transformations and offer qualitative explanations for the large observed differences in hysteresis width. While bulk crystals and contiguous films contain numerous nucleation sites, individual NPs likely harbor only a few, which may make it possible to correlate detectable defects (e.g., grain boundaries and dislocations) with the "ease" of switching phases, as quantified by the width of the thermal hysteresis.

  2. Volume-based considerations for the metal-insulator transition of CMR oxides

    SciTech Connect

    Neumeier, J.J. |; Hundley, M.F.; Cornelius, A.L.; Andres, K.

    1998-03-01

    The sensitivity of {rho} [electrical resistivity] to changes in volume which occur through: (1) applied pressure, (2) variations in temperature, and (3) phase transitions, is evaluated for some selected CMR oxides. It is argued that the changes in volume associated with phase changes are large enough to produce self pressures in the range of 0.18 to 0.45 GPa. The extreme sensitivity of the electrical resistivity to pressure indicates that these self pressures are responsible for large features in the electrical resistivity and are an important component for occurrence the metallicity below {Tc}. It is suggested that this is related to a strong volume dependence of the electron phonon coupling in the CMR oxides.

  3. Universal role of quantum uncertainty in Anderson metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Cheng, W. W.; Zhang, Z. J.; Gong, L. Y.; Zhao, S. M.

    2016-07-01

    We explore quantum uncertainty, based on Wigner-Yanase skew information, in various one-dimensional single-electron wave functions. For the power-law function and eigenfunctions in the Aubry-André model, the electronic localization properties are well-defined. For them, we find that quantum uncertainty is relatively small and large for delocalized and localized states, respectively. And around the transition points, the first-order derivative of the quantum uncertainty exhibits singular behavior. All these characters can be used as signatures of the transition from a delocalized phase to a localized one. With this criterion, we also study the quantum uncertainty in one-dimensional disorder system with long-range correlated potential. The results show that the first-order derivative of spectrum-averaged quantum uncertainty is minimal at a certain correlation exponent αm for a finite system, and has perfect finite-size scaling behaviors around αm. By extrapolating αm, the threshold value αc ≃ 1.56 ± 0.02 is obtained for the infinite system. Thus we give another perspective and propose a consistent interpretation for the discrepancies about localization property in the long-range correlated potential model. These results suggest that the quantum uncertainty can provide us with a new physical intuition to the localization transition in these models.

  4. Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2).

    PubMed

    Martens, K; Jeong, J W; Aetukuri, N; Rettner, C; Shukla, N; Freeman, E; Esfahani, D N; Peeters, F M; Topuria, T; Rice, P M; Volodin, A; Douhard, B; Vandervorst, W; Samant, M G; Datta, S; Parkin, S S P

    2015-11-01

    The intrinsic field effect, the change in surface conductance with an applied transverse electric field, of prototypal strongly correlated VO(2) has remained elusive. Here we report its measurement enabled by epitaxial VO(2) and atomic layer deposited high-κ dielectrics. Oxygen migration, joule heating, and the linked field-induced phase transition are precluded. The field effect can be understood in terms of field-induced carriers with densities up to ∼5×10(13)  cm(-2) which are trongly localized, as shown by their low, thermally activated mobility (∼1×10(-3)  cm(2)/V s at 300 K). These carriers show behavior consistent with that of Holstein polarons and strongly impact the (opto)electronics of VO(2). PMID:26588400

  5. Tuning near field radiative heat flux through surface excitations with a metal insulator transition.

    PubMed

    van Zwol, P J; Ranno, L; Chevrier, J

    2012-06-01

    The control of heat flow is a formidable challenge due to lack of good thermal insulators. Promising new opportunities for heat flow control were recently theoretically discovered for radiative heat flow in near field, where large heat flow contrasts may be achieved by tuning electronic excitations on surfaces. Here we show experimentally that the phase transition of VO2 entails a change of surface polariton states that significantly affects radiative heat transfer in near field. In all cases the Derjaguin approximation correctly predicted radiative heat transfer in near field, but it underestimated the far field limit. Our results indicate that heat flow contrasts can be realized in near field that can be larger than those obtained in far field. PMID:23003960

  6. Magnetic-field-induced superconductor-metal-insulator transitions in bismuth metal graphite

    NASA Astrophysics Data System (ADS)

    Suzuki, Masatsugu; Suzuki, Itsuko S.; Lee, Robert; Walter, Jürgen

    2002-07-01

    Bismuth metal graphite (MG) has a unique layered structure where Bi nanoparticles are encapsulated between adjacent sheets of nanographites. The superconductivity below Tc (=2.48 K) is due to Bi nanoparticles. The Curie-like susceptibility below 30 K is due to conduction electrons localized near zigzag edges of nanographites. A magnetic-field-induced transition from metallic to semiconductorlike phase is observed in the in-plane resistivity ρa around Hc (~25 kOe) for both H⊥c and H||c (c: c axis). A negative magnetoresistance in ρa for H⊥c (040 kOe) suggest the occurrence of a two-dimensional weak-localization effect.

  7. Giant oxygen isotope effect on the metal-insulator transition of RNiO{sub 3} perovskites

    SciTech Connect

    Medarde, M.; Fauth, F.; Furrer, A.; Lacorre, P.; Conder, K.

    1998-08-01

    The metal to insulator transition displayed by all the members of the perovskite family RNiO{sub 3} (R = 4f rare earth different from La) has attracted a lot of interest since it constitutes one of the few examples of this phenomenon in perfectly stoichiometric compounds. In spite of the great deal of work performed during the last six years, the mechanism responsible for the electronic localization is still a matter of controversy. The observation of unusually large O isotope shifts on the metal-insulator temperature T{sub MI} reported in this study represents an important advance since it clearly proves the dominant role of the electron lattice interaction as driving force for the transition. Moreover, the good agreement between this observation and a simple model based on the existence of Jahn-Teller polarons in the metallic state gives further qualitative and quantitative support to the polaronic picture recently suggested to account for O isotope effects in other 3d transition metal oxides containing Jahn-Teller ions.

  8. Strain controlled systematic variation of metal-insulator transition in epitaxial NdNiO{sub 3} thin films

    SciTech Connect

    Kumar, Yogesh; Choudhary, R. J.; Kumar, Ravi

    2012-10-01

    We report here the strain dependent structural and electrical transport properties of epitaxial NdNiO{sub 3} thin films. Pulsed laser deposition technique was used to grow the NdNiO{sub 3} thin films on c-axis oriented SrTiO{sub 3} single crystals. Deposited films were irradiated using 200 MeV Ag{sup 15+} ion beam at the varying fluence (1 Multiplication-Sign 10{sup 11}, 5 Multiplication-Sign 10{sup 11}, and 1 Multiplication-Sign 10{sup 12} ions/cm{sup 2}). X-ray diffraction studies confirm the epitaxial growth of the deposited films, which is maintained even up to the highest fluence. Rise in the in-plane compressive strain has been observed after the irradiation. All the films exhibit metal-insulator transition, however, a systematic decrease in the transition temperature (T{sub MI}) has been observed after irradiation, which may be attributed to the increase in the in-plane compression. Raman spectroscopy data reveal that this reduction in T{sub MI}, with the irradiation, is related to the decrease in band gap due to the stress generated by the in-plane compressive strain.

  9. Monolayer MoS2 metal insulator transition based memcapacitor modeling with extension to a ternary device

    NASA Astrophysics Data System (ADS)

    Khan, Abdul Karim; Lee, Byoung Hun

    2016-09-01

    Memcapacitor model based on its one possible physical realization is developed and simulated in order to know its limitation before making a real device. The proposed device structure consists of vertically stacked dielectric layer and MoS2 monolayer between two external metal plates. The Metal Insulator Transition (MIT) phenomenon of MoS2 monolayer is represented in terms of percolation probabilty which is used as the system state. Cluster based site percolation theory is used to mimic the MIT of MoS2 which shows slight discontinuous change in MoS2 monolayer conductivity. The metal to insulator transition switches the capacitance of the device in hysterical way. An Ioffe Regel criterion is used to determine the MIT state of MoS2 monolayer. A good control of MIT time in the range of psec is also achieved by changing a single parameter in the model. The model shows memcapacitive behavior with an edge of fast switching (in psec range) over the previous general models. The model is then extended into vertical cascaded version which behaves like a ternary device instead of binary.

  10. Magnetic-field induced superconductor-metal-insulator transitions in bismuth metal-graphite

    NASA Astrophysics Data System (ADS)

    Suzuki, Masatsugu; Suzuki, Itsuko S.; Lee, Robert; Walter, Jürgen

    2002-03-01

    Bismuth-metal graphite (MG) has a unique layered structure where Bi nanoparticles are encapsulated in nanographites. The size of nanographite is on the same order as that of Bi nanographite. The observed superconductivity below Tc (= 2.48 K) and the Curie-like Pauli paramagnetic susceptibility below 30 K are related to the high density of states at the Fermi energy arising from edge states of nanographites.^1 A magnetic-field induced transition from metallic to semiconductor-like phase is observed in the in-plane resistivity ρa around Hc (≈ 25 kOe) for both H⊥c and H‖c (c: c axis). The suppression of the metallic phase by H is independent of the directions of H (H‖c and H⊥c) for Bi-MG, suggesting that the spin related effect is significant compared to the orbital effect. The Zeemann energy gSμ_BH at 25 kOe corresponds to a thermal energy k_BTH with TH = 1.7 K, where g = 2 and S = 1/2. The temperature TH is slightly lower than T_c. A negative magnetoresistance in ρa for H⊥c (040 kOe) suggest the occurrence of two-dimensional weak localization effect. ^1K. Wakabayashi, M. Fujita, H. Ajiki, and M. Sigrist, Phys. Rev. 59, 8271 (1999).

  11. Low-power laser induced metal-insulator transition in gold::vanadium dioxide nanoarrays

    NASA Astrophysics Data System (ADS)

    Ferrara, Davon W.; Macquarrie, Evan R.; Nag, Joyeeta; Haglund, Richard F.

    2010-10-01

    Vanadium dioxide (VO2) is a strongly-correlated electron material with a well-known semiconductor-to-metal transition (SMT) that can be induced thermally, optically, or electrically. By coating lithographically prepared arrays of gold nanoparticles (NPs) of diameter 140 nm with a 60 nm thick film of VO2 by pulsed laser deposition, hybrid Au::VO2 structures were created. Due to the sensitivity of the Au particle-plasmon resonance (PPR), a temperature dependent shift in the PPR can be generated by switching the VO2 from one phase to another, creating a tunable plasmonic metamaterial. To study the low-power switching characteristics of these structures, transient absorption measurements were made using a mechanically shuttered 785 nm pump laser, corresponding to the PPR resonance of the Au NPs, and 1550 nm CW probe. Results show that the presence of Au NPs significantly lowers the threshold laser power required to induce the SMT. Measurements on arrays of different grating constants (350 nm and 500 nm) support the hypothesis that the particles are acting as ``nano-radiators'' that absorb and redeposit thermal energy by scattering light back into the film. Finite element modeling was performed to better understand the complex thermodynamics of the structure.

  12. Directing colloidal assembly and a metal-insulator transition using quenched-disordered polymeric networks

    NASA Astrophysics Data System (ADS)

    Phan, Anh; Jadrich, Ryan; Schweizer, Kenneth

    2015-03-01

    Replica integral equation and effective medium theory methods are employed to elucidate how to massively reconfigure a colloidal assembly and realize equilibrium states of high electrical conductivity at low physical volume fractions. This is achieved by employing variable mesh size networks of rigid rod or semiflexible polymers as a templating internal field. By exploiting bulk phase separation frustration and the tunable competing processes of colloid adsorption on the low dimensional network and fluctuation-driven colloid clustering in the pore spaces, distinct spatial organizations of greatly enhanced particle contacts can be achieved. As a result, a continuous, but very abrupt, transition from an insulating to metallic-like state can be realized via a small change of either the colloid-template or colloid-colloid attraction strength. Polymer conformational fluctuations are found to significantly modify the physical adsorption process and hence the ability of colloids to organize along the filamentary network strands. Qualitatively new physical behavior can emerge as the pore size approaches the colloid diameter, reflecting strong frustrating constraints of the template on colloidal assembly.

  13. Studies related to the magnetic-field-induced metal-insulator transition in n-type InSb

    NASA Astrophysics Data System (ADS)

    Abdul-Gader, Mousa Mohammad

    Measurements of the longitudinal and transverse resistivities of several n-type InSb samples with carrier densities in the range 2 to 7 x 10 cm-3 have been made as a function (a) of temperature ([greater or equal to] 0.04K) at constant magnetic field and (b) of magnetic field ( [less or equal to] 70KG) at constant temperature. A metal-insulator (MI) transition has been found to occur in the sample under study at a certain magnetic field Hc, dependent on the carrier concentration n. On the metallic side of this magnetically induced has been used to interpret the magnetic-field variation of the observed conductivity at very low temperatures. Good agreement is obtained in the vicinity of the transition with the critical exponent v ranging between 0.8 and nearly metallic region of the transition the temperature dependence of the conductivity obeys the relation ?(T) = qq+ mT + BT for T [lesser or equal to]1.5K. When the magnetic field is reduced sufficiently so that the sample becomes like a metal but still remaining in the extreme quantum limit, the resistivity becomes independent of temperature and agrees with the magnetoresistance theory of Roth and Argyres (1966) with the screening radius given by Wallace (1974a and b). In the insulator region of the transition, the low-temperature dependence of the resistivity is represented by [rho] = [rho]0exp (T0/T)x predicted for variable range hopping ° conduction, but no common value of x has been observed and it was in the range 1/4 to 1/2. For any temperature dependence in this regime, To is found to increase with increasing magnetic field and the discrepancy between the experimental and theoretical values of To is attributed to correlation effects.

  14. Growth temperature-dependent metal-insulator transition of vanadium dioxide epitaxial films on perovskite strontium titanate (111) single crystals

    NASA Astrophysics Data System (ADS)

    Wang, Liangxin; Yang, Yuanjun; Zhao, Jiangtao; Hong, Bin; Hu, Kai; Peng, Jinlan; Zhang, Haibin; Wen, Xiaolei; Luo, Zhenlin; Li, Xiaoguang; Gao, Chen

    2016-04-01

    Vanadium dioxide (VO2) epitaxial films were grown on perovskite single-crystal strontium titanate (SrTiO3) substrates by reactive radio-frequency magnetron sputtering. The growth temperature-dependent metal-insulator transition (MIT) behavior of the VO2 epitaxial films was then investigated. We found that the order of magnitude of resistance change across the MIT increased from 102 to 104 with increasing growth temperature. In contrast, the temperature of the MIT does not strongly depend on the growth temperature and is fairly stable at about 345 K. On one hand, the increasing magnitude of the MIT is attributed to the better crystallinity and thus larger grain size in the (010)-VO2/(111)-SrTiO3 epitaxial films at elevated temperature. On the other hand, the strain states do not change in the VO2 films deposited at various temperatures, resulting in stable V-V chains and V-O bonds in the VO2 epitaxial films. The accompanied orbital occupancy near the Fermi level is also constant and thus the MIT temperatures of VO2 films deposited at various temperatures are nearly the same. This work demonstrates that high-quality VO2 can be grown on perovskite substrates, showing potential for integration into oxide heterostructures and superlattices.

  15. Electric field induced metal-insulator transition and colossal magnetoresistance in CdCr2S4

    NASA Astrophysics Data System (ADS)

    Sun, C. P.; Lin, C. C.; Her, J. L.; Taran, S.; Chou, C. C.; Chan, C. L.; Huang, C. L.; Berger, H.; Yang, H. D.

    2008-03-01

    Multiferroic ordering existing in a single material is a recent hot topic in the field of condensed matter physics due to its potential application in device control. The chromium chalcogenide spinel CdCr2S4 is one of the attractive materials investigated by Hemberger et al. recently.[1] Based on the electrical measurement, there is no discontinuity through the ferromagnetic ordering at TC ˜ 85K.[2] We measure the temperature dependent resistance under various electric fields to investigate the electrical properties of the present material. To our knowledge, we first observe the electric field induced metal-insulator transition in this material around TC. Moreover, a colossal magnetoresistance (CMR), which is comparable to that of manganese-based CMR material, is also observed near TC. The origin for these properties is discussed. [1] J. Hemberger, P. Lunkenheimer, R. Fichtl, H.-A. Krug von Nidda, V. Tsurkan, A. Loidl, Nature 434, 364 (2006). [2] P. K. Baltzer, H. W. Lehmann, and M. Robbins, Phys. Rev. Lett. 15, 493 (1965).

  16. Magnetic and transport properties of amorphous GdxGe1-x alloys near the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Helgren, E.; Hellman, F.; Zeng, Li; Sinenian, N.; Islam, R.; Smith, David J.

    2007-11-01

    The temperature and field dependence of magnetization and conductivity of amorphous Ge doped with Gd (a-GdxGe1-x) has been measured for a wide range of x (0.08metal-insulator transition. Magnetization and magnetic susceptibility measurements show strong magnetic interactions and a low temperature spin-glass freezing. High field magnetization and susceptibility per Gd atom in the paramagnetic state are significantly suppressed below that of noninteracting Gd, as observed previously for a-Gd-Si alloys. However, unlike a-Gd-Si , the low field susceptibility does not fit a Curie-Weiss law and shows no significant dependence on composition. Conductivity measurements show that Gd causes localization of charge carriers below a characteristic temperature T* , which also marks the onset of significant negative magnetoresistance. Both T* and the magnitude of the MR are significantly lower in a-Gd-Ge than in comparable a-Gd-Si alloys. It is proposed that the large effects of the host matrix (Ge vs Si) are due to differences in both the band gap and dielectric constant, which cause changes in screening, thereby altering the effect of Gd magnetic moments on the localization of carriers and on the indirect mediated Gd-Gd exchange interactions.

  17. Disordered RuO2 exhibits two dimensional, low-mobility transport and a metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Osofsky, M. S.; Krowne, C. M.; Charipar, K. M.; Bussmann, K.; Chervin, C. N.; Pala, I. R.; Rolison, D. R.

    2016-02-01

    The discovery of low-dimensional metallic systems such as high-mobility metal oxide field-effect transistors, the cuprate superconductors, and conducting oxide interfaces (e.g., LaAlO3/SrTiO3) has stimulated research into the nature of electronic transport in two-dimensional systems given that the seminal theory for transport in disordered metals predicts that the metallic state cannot exist in two dimensions (2D). In this report, we demonstrate the existence of a metal-insulator transition (MIT) in highly disordered RuO2 nanoskins with carrier concentrations that are one-to-six orders of magnitude higher and with mobilities that are one-to-six orders of magnitude lower than those reported previously for 2D oxides. The presence of an MIT and the accompanying atypical electronic characteristics place this form of the oxide in a highly diffusive, strong disorder regime and establishes the existence of a metallic state in 2D that is analogous to the three-dimensional case.

  18. Competing exchange interactions on the verge of a metal-insulator transition in the two-dimensional spiral magnet Sr3Fe2O7.

    PubMed

    Kim, J-H; Jain, Anil; Reehuis, M; Khaliullin, G; Peets, D C; Ulrich, C; Park, J T; Faulhaber, E; Hoser, A; Walker, H C; Adroja, D T; Walters, A C; Inosov, D S; Maljuk, A; Keimer, B

    2014-10-01

    We report a neutron scattering study of the magnetic order and dynamics of the bilayer perovskite Sr(3)Fe(2)O(7), which exhibits a temperature-driven metal-insulator transition at 340 K. We show that the Fe(4+) moments adopt incommensurate spiral order below T(N) = 115 K and provide a comprehensive description of the corresponding spin-wave excitations. The observed magnetic order and excitation spectra can be well understood in terms of an effective spin Hamiltonian with interactions ranging up to third-nearest-neighbor pairs. The results indicate that the helical magnetism in Sr(3)Fe(2)O(7) results from competition between ferromagnetic double-exchange and antiferromagnetic superexchange interactions whose strengths become comparable near the metal-insulator transition. They thus confirm a decades-old theoretical prediction and provide a firm experimental basis for models of magnetic correlations in strongly correlated metals. PMID:25325658

  19. Electronic properties and the nature of metal-insulator transition in NdNiO3 prepared at ambient oxygen pressure

    NASA Astrophysics Data System (ADS)

    Hooda, M. K.; Yadav, C. S.

    2016-06-01

    We report the electronic properties of the NdNiO3, prepared at the ambient oxygen pressure condition. The metal-insulator transition temperature is observed at 192 K, but the low temperature state is found to be less insulating compared to the NdNiO3 prepared at high oxygen pressure. The electric resistivity, Seebeck coefficient and thermal conductivity of the compound show large hysteresis below the metal-insulator transition. The large value of the effective mass (m*~8me) in the metallic state indicates the narrow character of the 3d band. The electric conduction at low temperatures (T=2-20 K) is governed by the variable range hopping of the charge carriers.

  20. Disappearance of metal-insulator transition in NdNiO3/LaAlO3 films by ion irradiation controlled stress

    NASA Astrophysics Data System (ADS)

    Kumar, Yogesh; Choudhary, R. J.; Kumar, Ravi

    2016-09-01

    The effect of strain on the metal-insulator transition (MIT) of the epitaxial NdNiO3 film on the c-axis oriented LaAlO3 single crystal, grown by pulsed laser deposition, has been investigated. Swift heavy ion irradiation was used to vary the strain state of the deposited film. X-ray diffraction confirmed a systematic fluence dependent rise in the in-plane compressive strain, while maintaining the epitaxy of the film. This in-plane compressive strain has been found to reduce the MIT temperature, which finally disappeared for the highest fluence of the irradiation. This is also corroborated with the Raman spectroscopy measurements which suggest that the ion irradiation induced stress is responsible for the suppression of the metal-insulator transition.

  1. Electric field-assisted metal insulator transition in vanadium dioxide (VO2) thin films: optical switching behavior and anomalous far-infrared emissivity variation

    NASA Astrophysics Data System (ADS)

    Crunteanu, Aurelian; Fabert, Marc; Cornette, Julie; Colas, Maggy; Orlianges, Jean-Christophe; Bessaudou, Annie; Cosset, Françoise

    2014-03-01

    We present the vanadium dioxide (VO2) thin films deposition using e-beam evaporation of a vanadium target under oxygen atmosphere on different substrates (sapphire, Si, SiO2/Si…) and we focus on their electrical and optical properties variations as the material undergoes a metal-insulator transition under thermal and electrical stimuli. The phase transition induces extremely abrupt changes in the electronic and optical properties of the material: the electrical resistivity increases up to 5 orders of magnitude while the optical properties (transmission, reflection, refractive index) are drastically modified. We present the integration of these films in simple planar optical devices and we demonstrate electrical-activated optical modulators for visible-infrared signals with high discrimination between the two states. We will highlight a peculiar behavior of the VO2 material in the infrared and far infrared regions (2- 20 μm), namely its anomalous emissivity change under thermal- end electrical activation (negative differential emittance phenomenon) with potential applications in active coatings for thermal regulation, optical limiting or camouflage coatings.

  2. Compositionally controlled metal-insulator transition in Tl{sub 2-x}In{sub x}TeO{sub 6}

    SciTech Connect

    Siritanon, Theeranun; Sleight, A.W.; Subramanian, M.A.

    2011-04-15

    Tl{sub 2}TeO{sub 6} and In{sub 2}TeO{sub 6} are both known to crystallize in the Na{sub 2}SiF{sub 6}-type structure. We find Tl{sub 2}TeO{sub 6} is metallic, whereas In{sub 2}TeO{sub 6} is an insulator. We have prepared a complete Tl{sub 2-x}In{sub x}TeO{sub 6} series in a search for a compositionally controlled metal-insulator transition that might be expected if a complete solid solution can be obtained. Unit cell edges and volume vary monotonically with no indication of a miscibility gap. The metal-insulator transition occurs at an x value of about 1.4, which can be rationalized on a percolation model. No superconductivity could be detected down to 5 K. -- Graphical abstract: A complete solid solution between Tl{sub 2}TeO{sub 6} and In{sub 2}TeO{sub 6} is formed. A compositionally controlled metal-insulator transition occurs in Tl{sub 2-x}In{sub x}TeO{sub 6} at an x value of about 1.5. No superconductivity could be detected down to 5 K. Display Omitted Research highlights: {yields} A complete solid solution between Tl{sub 2}TeO{sub 6} and In{sub 2}TeO{sub 6} is formed. {yields} A compositionally controlled metal-insulator transition occurs in Tl{sub 2-x}In{sub x}TeO{sub 6} at an x value of about 1.5, which can be rationalized on a percolation model. {yields} No superconductivity could be detected down to 5 K.

  3. Structurally-driven metal-insulator transition in Ca{sub 2}Ru{sub 1-x}Cr{sub x}O{sub 4} (0{<=}x<0.14): A single crystal X-ray diffraction study

    SciTech Connect

    Qi, T.F.; Ge, M.; Korneta, O.B.; Parkin, S.; De Long, L.E.; Cao, G.

    2011-04-15

    Correlation between structure and transport properties are investigated in high-quality single-crystals of Ca{sub 2}Ru{sub 1-x}Cr{sub x}O{sub 4} with 0metal-insulator (MI) transition at 357 K. Upon chromium doping on the ruthenium site, the metal-insulator transition temperature (T{sub MI}) was drastically reduced, and is related to the competition between structural changes that occur upon Cr doping and with decreasing temperature. A strong suppression of structural distortions with increasing Cr substitution was identified. No clear T{sub MI} can be observed when x>13.5% and the system behaves as an insulator. Such a large, sharp metal-insulator transition and tuneable transition temperature may have potential applications in electronic devices. -- Graphical abstract: The metal-insulator transition temperature (T{sub MI}) was drastically reduced by Cr doping, and is closely related to the distortion of structure. Display Omitted Research highlights: {yields} The metal-insulator transition temperature (T{sub MI}) was drastically reduced by doping Cr into Ca{sub 2}RuO{sub 4} single crystal. {yields} Detailed single crystal structural analysis provided important insight into this structurally-driven metal-insulator transition. {yields} Negative Volume Thermal Expansion (NVTE) was observed with increasing temperature.

  4. Exotic topological states near a quantum metal-insulator transition in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Tian, Zhaoming

    Pyrochlore iridates have attracted great interest as prime candidates that may host topologically nontrivial states, spin ice ordering and quantum spin liquid states, in particular through the interplay between different degrees of freedom, such as local moments and mobile electrons. Based on our extensive study using our high quality single crystals, we will discuss such examples, i.e. chiral spin liquid in a quadratic band touching state, Weyl semimetallic state and chiral domain wall transport nearby a quantum insulator-semimetal transition in pyrochlore iridates. This work is based on the collaboration with Nakatsuji Satoru, Kohama Yoshimitsu, Tomita Takahiro, Kindo Koichi, Jun J. Ishikawa, Balents Leon, Ishizuka Hiroaki, Timothy H. Hsieh. ZM. Tian was supported by JSPS Postdoctoral Fellowship (No.P1402).

  5. Three-dimensional electronic structures and the metal-insulator transition in Ruddlesden-Popper iridates

    NASA Astrophysics Data System (ADS)

    Yamasaki, A.; Fujiwara, H.; Tachibana, S.; Iwasaki, D.; Higashino, Y.; Yoshimi, C.; Nakagawa, K.; Nakatani, Y.; Yamagami, K.; Aratani, H.; Kirilmaz, O.; Sing, M.; Claessen, R.; Watanabe, H.; Shirakawa, T.; Yunoki, S.; Naitoh, A.; Takase, K.; Matsuno, J.; Takagi, H.; Sekiyama, A.; Saitoh, Y.

    2016-09-01

    In this study, we systematically investigate three-dimensional (3D) momentum (ℏ k )-resolved electronic structures of Ruddlesden-Popper-type iridium oxides Srn +1IrnO3 n +1 using soft-x-ray (SX) angle-resolved photoemission spectroscopy (ARPES). Our results provide direct evidence of an insulator-to-metal transition that occurs upon increasing the dimensionality of the IrO2-plane structure. This transition occurs when the spin-orbit-coupled jeff=1 /2 band changes its behavior in the dispersion relation and moves across the Fermi energy. In addition, an emerging band along the Γ (0,0,0)-R (π ,π ,π ) direction is found to play a crucial role in the metallic characteristics of SrIrO3. By scanning the photon energy over 350 eV, we reveal the 3D Fermi surface in SrIrO3 and kz-dependent oscillations of photoelectron intensity in Sr3Ir2O7 . In contrast to previously reported results obtained using low-energy photons, folded bands derived from lattice distortions and/or magnetic ordering make significantly weak (but finite) contributions to the k -resolved photoemission spectrum. At the first glance, this leads to the ambiguous result that the observed k -space topology is consistent with the unfolded Brillouin zone (BZ) picture derived from a nonrealistic simple square or cubic Ir lattice. Through careful analysis, we determine that a superposition of the folded and unfolded band structures has been observed in the ARPES spectra obtained using photons in both ultraviolet and SX regions. To corroborate the physics deduced using low-energy ARPES studies, we propose to utilize SX-ARPES as a powerful complementary technique, as this method surveys more than one whole BZ and provides a panoramic view of electronic structures.

  6. Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well.

    SciTech Connect

    Schaffler, F.; Muhlberger, M.; Lai, K. W.; Lyon, S.A.; Tsui, Daniel Chee; Pan, W. Y.

    2005-01-01

    The apparent metal-insulator transition is observed in a high-quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si{sub 1-x}Ge{sub x} heterostructure with mobility {mu} = 1.9 x 10{sup 5} cm{sup 2}/V s at density n = 1.45 x 10{sup 11} cm{sup -2}. The critical density, at which the thermal coefficient of low T resistivity changes sign, is -0.32 x 10{sup 11} cm{sup -2}, a very low value obtained in Si-based 2D systems. The in-plane magnetoresistivity {rho}(B{sub ip}) was measured in the density range, 0.35 x 10{sup 11} < n < 1.45 x 10{sup 11} cm{sup -2}, where the 2DES shows the metallic-like behavior. It first increases and then saturates to a finite value {rho}(B{sub c}) for B{sub ip}>B{sub c} , with B{sub c} the full spin-polarization field. Surprisingly, {rho}(B{sub c})/{rho}(0)-1.8 for all the densities, even down to n = 0.35 x 10{sup 11} cm{sup -2}, only 10% higher than n{sub c}. This is different from that in clean Si metal-oxide-semiconductor field-effect transistors, where the enhancement is strongly density dependent and {rho}(B{sub c})/{rho}(0) appears to diverge as n {yields} n{sub c}. Finally, we show that in the fully spin-polarized regime, dependent on the 2DES density, the temperature dependence of {rho}(B{sub ip}) can be either metallic-like or insulating.

  7. Metal-insulator transition in variably doped (Bi(1-x)Sb(x))2Se3 nanosheets.

    PubMed

    Lee, Chee Huei; He, Rui; Wang, ZhenHua; Qiu, Richard L J; Kumar, Ajay; Delaney, Conor; Beck, Ben; Kidd, T E; Chancey, C C; Sankaran, R Mohan; Gao, Xuan P A

    2013-05-21

    Topological insulators are novel quantum materials with metallic surface transport but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to isolate the more interesting surface transport characteristics. Here, we report the synthesis and characterization of nanosheets of a topological insulator Bi2Se3 with variable Sb-doping levels to control the electron carrier density and surface transport behavior. (Bi(1-x)Sb(x))2Se3 thin films of thickness less than 10 nm are prepared by epitaxial growth on mica substrates in a vapor transport setup. The introduction of Sb in Bi2Se3 effectively suppresses the room temperature electron density from ∼4 × 10(13) cm(-2) in pure Bi2Se3 (x = 0) to ∼2 × 10(12) cm(-2) in (Bi(1-x)Sb(x))2Se3 at x ∼ 0.15, while maintaining the metallic transport behavior. At x ≳ ∼0.20, a metal-insulator transition (MIT) is observed, indicating that the system has transformed into an insulator in which the metallic surface conduction is blocked. In agreement with the observed MIT, Raman spectroscopy reveals the emergence of vibrational modes arising from Sb-Sb and Sb-Se bonds at high Sb concentrations, confirming the appearance of the Sb2Se3 crystal structure in the sample. These results suggest that nanostructured chalcogenide films with controlled doping can be a tunable platform for fundamental studies and electronic applications of topological insulator systems. PMID:23563061

  8. Magnetism and Metal-Insulator Transition in Fe(Sb1−xTex)2

    SciTech Connect

    Petrovic, C.; Hu, R.; Mitrovic, V.F.

    2009-02-09

    We have investigated structural, magnetic, and transport properties of Fe(Sb{sub 1-x}Te{sub x}){sub 2} single crystals. Whereas metallic ground state is induced for x = 0.001, canted antiferromagnetism is observed for 0.1 {le} x {le} 0.4 with an intermediate ferromagnetic phase for x = 0.2. With higher Te doping, semiconducting behavior is restored and the variable range hopping conduction mechanism dominates at low temperatures for 0.4 {le} x {le} 0.6. We discuss our results within the framework of inverted metal to insulator in correlated electron insulators.

  9. Topological textures and metal-insulator transition in Reentrant Integer Quantum Hall Effect: role of disorder

    NASA Astrophysics Data System (ADS)

    Lyanda-Geller, Yuli; Simion, George

    2015-03-01

    We investigate a ground state of the two-dimensional (2D) electron liquid in the presence of disorder for Landau level filling factors, for which the re-entrant integer quantum Hall effect is observed. Our particular interest is the range of filling factors, which in a clean 2D system is favorable to formation of the two-electron (2e) bubble crystal. For the smooth random potential due to charged impurities placed far away from the 2D gas, the ground state is a lightly distorted 2e bubble crystal. However, for positively or negatively charged residual impurities located approximately within about three magnetic lengths from the 2D electrons, the ground state contains charged 2e complexes formed either by positively charged impurity and 3e defect bubble, or negatively charged impurity and 2e defect bubble. In the vicinity of 1e and 3e defect bubbles, the 2e bubbles of the crystal change their shape from round to elongated forming hedgehog (for 1e defect) or vortex (for 3e defect) textures. The topological textures due to these complexes interact with vortex and hedgehog excitations, generated as temperature increases that are not bound by residual impurities. The temperature of insulator to metal transition calculated with both bound and unbound defects agrees with experiment. Research was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award DE-SC0010544.

  10. Probing the Metal-Insulator Transition in BaTiO3 by Electrostatic Doping

    NASA Astrophysics Data System (ADS)

    Raghavan, Santosh; Zhang, Jack Y.; Shoron, Omor F.; Stemmer, Susanne

    2016-07-01

    The metal-to-insulator transition in BaTiO3 is investigated using electrostatic doping, which avoids effects from disorder and strain that would accompany chemical doping. SmTiO3/BaTiO3/SrTiO3 heterostructures are doped with a constant sheet carrier density of 3 ×1014 cm-2 that is introduced via the polar SmTiO3/BaTiO3 interface. Below a critical BaTiO3 thickness, the structures exhibit metallic behavior with high carrier mobilities at low temperatures, similar to SmTiO3/SrTiO3 interfaces. Above this thickness, data indicate that the BaTiO3 layer becomes ferroelectric. The BaTiO3 lattice parameters increase to a value consistent with a strained, tetragonal unit cell, the structures are insulating below ˜125 K , and the mobility drops by more than an order of magnitude, indicating self-trapping of carriers. The results shed light on the interplay between charge carriers and ferroelectricity.

  11. Metal-Insulator Transitions.

    ERIC Educational Resources Information Center

    Mott, Nevill

    1978-01-01

    Explains how changes in temperature, pressure, magnetic field or alloy composition can affect the electronic band structure of substances, leading in some cases to dramatic changes in conductivity. (GA)

  12. Metal-insulator transition in Nd{sub 1−x}Eu{sub x}NiO{sub 3}: Entropy change and electronic delocalization

    SciTech Connect

    Jardim, R. F. Andrade, S.; Barbeta, V. B.; Escote, M. T.; Cordero, F.; Torikachvili, M. S.

    2015-05-07

    The metal-insulator (MI) phase transition in Nd{sub 1–x}Eu{sub x}NiO{sub 3}, 0 ≤ x ≤ 0.35, has been investigated through the pressure dependence of the electrical resistivity ρ(P, T) and measurements of specific heat C{sub P}(T). The MI transition temperature (T{sub MI}) increases with increasing Eu substitution and decreases with increasing pressure. Two distinct regions for the Eu dependence of dT{sub MI}/dP were found: (i) for x ≤ 0.15, dT{sub MI}/dP is nearly constant and ∼−4.3 K/kbar; (ii) for x ≥ 0.15, dT{sub MI}/dP increases with x and it seems to reach a saturation value ∼−6.2 K/kbar for the x = 0.35 sample. This change is accompanied with a strong decrease in the thermal hysteresis in ρ(P, T) between the cooling and warming cycles, observed in the vicinity of T{sub MI}. The entropy change (ΔS) at T{sub MI} for the sample x = 0, estimated by using the dT{sub MI}/dP data and the Clausius-Clapeyron equation, resulted in ΔS ∼ 1.2 J/mol K, a value in line with specific heat measurements. When the Eu concentration is increased, the antiferromagnetic (AF) and the MI transitions are separated in temperature, permitting that an estimate of the entropy change due to the AF/Paramagnetic transition be carried out, yielding ΔS{sub M} ∼ 200 mJ/mol K. This value is much smaller than that expected for a s = 1/2 spin system. The analysis of ρ(P, T) and C{sub P}(T) data indicates that the entropy change at T{sub MI} is mainly due to the electronic delocalization and not related to the AF transition.

  13. Magnetic transformations in the organic conductor κ-(BETS)2Mn[N(CN)2]3 at the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Vyaselev, O. M.; Kartsovnik, M. V.; Biberacher, W.; Zorina, L. V.; Kushch, N. D.; Yagubskii, E. B.

    2011-03-01

    A complex study of magnetic properties including dc magnetization, H1 NMR, and magnetic torque measurements has been performed for the organic conductor κ-(BETS)2Mn[N(CN)2]3 which undergoes a metal-insulator transition at TMI≈25K. NMR and the magnetization data indicate a transition in the manganese subsystem from paramagnetic to a frozen state at TMI, which is, however, not a simple Néel type order. Further, a magnetic field induced transition resembling a spin flop has been detected in the torque measurements at temperatures below TMI. This transition is most likely related to the spins of π electrons localized on the organic molecules BETS and coupled with the manganese 3d spins via exchange interaction.

  14. Ground-state oxygen holes and the metal-insulator transition in the negative charge-transfer rare-earth nickelates

    NASA Astrophysics Data System (ADS)

    Bisogni, Valentina; Catalano, Sara; Green, Robert J.; Gibert, Marta; Scherwitzl, Raoul; Huang, Yaobo; Strocov, Vladimir N.; Zubko, Pavlo; Balandeh, Shadi; Triscone, Jean-Marc; Sawatzky, George; Schmitt, Thorsten

    2016-10-01

    The metal-insulator transition and the intriguing physical properties of rare-earth perovskite nickelates have attracted considerable attention in recent years. Nonetheless, a complete understanding of these materials remains elusive. Here we combine X-ray absorption and resonant inelastic X-ray scattering (RIXS) spectroscopies to resolve important aspects of the complex electronic structure of rare-earth nickelates, taking NdNiO3 thin film as representative example. The unusual coexistence of bound and continuum excitations observed in the RIXS spectra provides strong evidence for abundant oxygen holes in the ground state of these materials. Using cluster calculations and Anderson impurity model interpretation, we show that distinct spectral signatures arise from a Ni 3d8 configuration along with holes in the oxygen 2p valence band, confirming suggestions that these materials do not obey a conventional positive charge-transfer picture, but instead exhibit a negative charge-transfer energy in line with recent models interpreting the metal-insulator transition in terms of bond disproportionation.

  15. Local structural distortion and electronic modifications in PrNiO3 across the metal-insulator transition

    SciTech Connect

    Piamonteze, C.; Tolentino, H.C.N.; Ramos, A.Y.; Massa, N. E.; Alonso, J.A.; Martinez-Lope, M.J.; Casais, M.T.

    2003-01-24

    Local electronic and structural properties of PrNiO3 perovskite were studied by means of X-ray Absorption Spectroscopy at Ni K and L edges. The EXAFS results at Ni K edge show a structural transition from three different Ni-O bond-lengths at the insulating phase to two Ni-O bond-lengths above TMI. These results were interpreted as being due to a transition from a structure with two different Ni sites at the insulating phase to one distorted Ni site at the metallic phase. The Ni L edge spectra show a remarkable difference between the spectra measured at the insulating and metallic phases that indicates a decreasing degree of hybridization between Ni3d and O2p bands from the metallic to the insulating phase.

  16. Donor Magneto-Spectroscopy and Magnetic Field - Metal-Insulator Transition in MERCURY(1-X) Cadmium(x)tellurium and Indium Antimonide

    NASA Astrophysics Data System (ADS)

    Choi, Jung Bum

    Far infrared (FIR) magneto-transmission studies of n-type Hg_{1-x}Cd _{x}Te (x = 0.198, 0.204, 0.224, 0.237, 0.270) for temperatures down to 1.5K and magnetic fields up to 9T in Voigt and Faraday geometries have been performed. Magneto-optical transitions of donor bound electrons are observed; including the (000) --> (001) and (010) --> (01k_{z}) in the Voigt geometry, and the (000) --> (110) in the Faraday geometry. These identifications are confirmed by their resonance positions, selection rules, and temperature dependence. The experimental observations are consistent with calculations of resonance positions and lineshapes based on the hydrogenic donor model including central cell effects. This work confirms the donor bound electronic ground state for Hg_{1-x}Cd_{x} Te. The magneto-transport and FIR spectroscopy have been combined to probe the nature of the impurity band in the vicinity of the magnetic field induced metal-insulator transition. The results obtained in Hg_ {1-x}Cd_{x}Te and InSb show the persistance of the (000) --> (110) impurity transition through the metal-insulator critical field. This observation demonstrates the existence of the metallic impurity band which is split off from the conduction band. In the studies of the critical behavior of InSb, the conductivity measured for temperatures down to 0.45K shows a dominant linear dependence on temperature near the transition field. Furthermore, the zero-temperature extrapolated conductivity was found to drop continuously to zero at the transition field with a critical exponent of nu = 1.07 +/- 0.07.

  17. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement.

    PubMed

    Ke, Chang; Zhu, Weiguang; Zhang, Zheng; Tok, Eng Soon; Ling, Bo; Pan, Jisheng

    2015-01-01

    A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO2 (SnO2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO2:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO2:Sb system.

  18. Electron lone pair distortion facilitated metal-insulator transition in β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires

    SciTech Connect

    Wangoh, L.; Quackenbush, N. F.; Marley, P. M.; Banerjee, S.; Sallis, S.; Fischer, D. A.; Woicik, J. C.; Piper, L. F. J.

    2014-05-05

    The electronic structure of β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires has been studied with x-ray photoelectron spectroscopy techniques. The recent synthesis of defect-free β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires resulted in the discovery of an abrupt voltage-induced metal insulator transition. First principle calculations predicted an additional V-O-Pb hybridized “in-gap” state unique to this vanadium bronze playing a significant role in facilitating the transition. We confirm the existence, energetic position, and orbital character of the “in-gap” state. Moreover, we reveal that this state is a hybridized Pb 6s–O 2p antibonding lone pair state resulting from the asymmetric coordination of the Pb{sup 2+} ions.

  19. Hopping energy and percolation-type transport in p-GaAs low densities near the 2D metal-insulator transition at zero magnetic field

    NASA Astrophysics Data System (ADS)

    Dlimi, S.; El kaaouachi, A.; Narjis, A.; Limouny, L.; Sybous, A.; Errai, M.

    2013-10-01

    We investigated the temperature dependence of resistivity of a high mobility two-dimensional holes system grown on the (311) GaAs surface in the absence of the magnetic field near the metal-insulator transition. The Coulomb hopping was found in a wide range of temperature and carrier density. Quantitative analysis of our results suggests that a crossover from Efros-Shklovskii to Mott variable range hopping due to screening phenomenon when the hopping distance increases. We found that using the 2D single particle hopping amplitude CES gives unreasonably high localization lengths. Therefore, we believe that electrical transport is dominated by correlated hopping and the hopping amplitude must be renormalized by a reduction factor A≈1.6. The localization length appears to diverge in a power-law fashion near the transition point. The analysis of the hopping gives results consistent with the prediction of the critical point from a recent study of percolation and other experiences.

  20. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement

    PubMed Central

    Ke, Chang; Zhu, Weiguang; Zhang, Zheng; Soon Tok, Eng; Ling, Bo; Pan, Jisheng

    2015-01-01

    A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO2 (SnO2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO2:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO2:Sb system. PMID:26616286

  1. Suppression of metal-insulator transition in VO2 by electric field-induced oxygen vacancy formation.

    PubMed

    Jeong, Jaewoo; Aetukuri, Nagaphani; Graf, Tanja; Schladt, Thomas D; Samant, Mahesh G; Parkin, Stuart S P

    2013-03-22

    Electrolyte gating with ionic liquids is a powerful tool for inducing novel conducting phases in correlated insulators. An archetypal correlated material is vanadium dioxide (VO(2)), which is insulating only at temperatures below a characteristic phase transition temperature. We show that electrolyte gating of epitaxial thin films of VO(2) suppresses the metal-to-insulator transition and stabilizes the metallic phase to temperatures below 5 kelvin, even after the ionic liquid is completely removed. We found that electrolyte gating of VO(2) leads not to electrostatically induced carriers but instead to the electric field-induced creation of oxygen vacancies, with consequent migration of oxygen from the oxide film into the ionic liquid. This mechanism should be taken into account in the interpretation of ionic liquid gating experiments.

  2. DC current induced metal-insulator transition in epitaxial Sm{sub 0.6}Nd{sub 0.4}NiO{sub 3}/LaAlO{sub 3} thin film

    SciTech Connect

    Huang, Haoliang; Luo, Zhenlin Yang, Yuanjun; Yang, Mengmeng; Wang, Haibo; Hu, Sixia; Bao, Jun; Yun, Yu; Meng, Dechao; Lu, Yalin; Gao, Chen

    2014-05-15

    The metal-insulator transition (MIT) in strong correlated electron materials can be induced by external perturbation in forms of thermal, electrical, optical, or magnetic fields. We report on the DC current induced MIT in epitaxial Sm{sub 0.6}Nd{sub 0.4}NiO{sub 3} (SNNO) thin film deposited by pulsed laser deposition on (001)-LaAlO{sub 3} substrate. It was found that the MIT in SNNO film not only can be triggered by thermal, but also can be induced by DC current. The T{sub MI} of SNNO film decreases from 282 K to 200 K with the DC current density increasing from 0.003 × 10{sup 9} A•m{sup −2} to 4.9 × 10{sup 9} A•m{sup −2}. Based on the resistivity curves measured at different temperatures, the MIT phase diagram has been successfully constructed.

  3. Confinement-driven metal-insulator transition and polarity-controlled conductivity of epitaxial LaNiO3/LaAlO3 (111) superlattices

    NASA Astrophysics Data System (ADS)

    Wei, Haoming; Grundmann, Marius; Lorenz, Michael

    2016-08-01

    Recently, topological conductivity has been predicted theoretically in LaNiO3(111)-based superlattices. Here we report high-quality epitaxial LaNiO3/LaAlO3 superlattices on (111)-oriented SrTiO3 and LaAlO3 single crystals. For both substrates a metal-insulator transition with decreasing number of LaNiO3 monolayers is found. While the electrical transport is dominated by two-dimensional variable range hopping for superlattices grown on polar mismatched SrTiO3(111), it switches to a thermally activated single gap behavior on polar matched LaAlO3(111). The gap energy of the polar double-layer LaNiO3 superlattices can be tuned via the thickness of the insulating LaAlO3 layers.

  4. Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams

    PubMed Central

    Kim, Min-Woo; Jung, Wan-Gil; Hyun-Cho; Bae, Tae-Sung; Chang, Sung-Jin; Jang, Ja-Soon; Hong, Woong-Ki; Kim, Bong-Joong

    2015-01-01

    Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain. PMID:26040637

  5. Improved metal-insulator-transition characteristics of ultrathin VO{sub 2} epitaxial films by optimized surface preparation of rutile TiO{sub 2} substrates

    SciTech Connect

    Martens, Koen; Aetukuri, Nagaphani; Jeong, Jaewoo; Samant, Mahesh G.; Parkin, Stuart S. P.

    2014-02-24

    Key to the growth of epitaxial, atomically thin films is the preparation of the substrates on which they are deposited. Here, we report the growth of atomically smooth, ultrathin films of VO{sub 2} (001), only ∼2 nm thick, which exhibit pronounced metal-insulator transitions, with a change in resistivity of ∼500 times, at a temperature that is close to that of films five times thicker. These films were prepared by pulsed laser deposition on single crystalline TiO{sub 2}(001) substrates that were treated by dipping in acetone, HCl and HF in successive order, followed by an anneal at 700–750  °C in flowing oxygen. This pretreatment removes surface contaminants, TiO{sub 2} defects, and provides a terraced, atomically smooth surface.

  6. Correlation driven metal insulator transition as a function of thickness in SrRuO3 thin films

    NASA Astrophysics Data System (ADS)

    Koster, Gertjan; Blok, Jeroen; Siemons, Wolter; Zhong, Zhicheng; Kelly, Paul; Rijnders, Guus; Blank, Dave

    2010-03-01

    Recently there has been debate on the existence of a fundamental thickness limit of a metallic ground state of SrRuO3 thin films and what mechanism drives the system to an insulating state at low thicknesses should there be a transition. We present further evidence that a fundamental thickness level does indeed exist and that the metal-to-insulator transition is in fact a transition from a conducting ferromagnetic state to an insulating anti-ferromagnetic state that occurs from 3 to 4 unit cell layers of SrRuO3. We show this in two steps, in the first step we do Density Functional calculations on SrRuO3 that show a ferromagnetic -- anti-ferromagnetic phase transition occurring in SrRuO3 at large values of the electron correlation correlation U. In the second step we use ruthenium 3d x-ray photoemission spectra obtained in situ to demonstrate that U increases for very thin films of SrRuO3, driving the metal-to-insulator transition.

  7. Metal insulator transition in vanadium dioxide nanobeams and magnetic-field asymmetry of nonlinear transport in carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Wei, Jiang

    This dissertation includes two research projects. The first project of vanadium dioxide nanobeams (VO2) shows that there are many advantages to be gained from working with strongly correlated materials in nanoscale crystalline form. Small VO2 single crystals display abundant new properties. It is shown that metallic and insulating phases can coexist in VO2 due to the growth introduced strain. From the simple physical system of length-confined suspended VO2 naonobeam, it is observed that metallic phase supercools and the resistivity of insulating phase remains constant when metal and insulator coexist. Most importantly, the constant resistivity indicates that the MIT in VO2 is driven by strong electron-electron interactions. Also based on the unique mechanical buckling behavior of suspended VO2 nanobeam, we developed a new way of measuring the intrinsic transition temperature Tc, which is independent of hysteresis. Beyond these findings, we proposed a new phase diagram including a stable M2 phase, which can more accurately describe and explain all the variety of behavior of VO2 nanocrystals. However, many basic question remain about the behavior of VO2 such as the detailed form of the phase diagram including the precise phase boundaries between all three phases; effects of surface energy and finite geometry, surface doping, and other parameters on stability in small crystals; and kinetics of the transition. We may hope that once the fundamental behavior of the system has been better established theoretical progress will finally be possible in understanding the basic nature of the transition. In second research project, we have carried out the first experimental study of a new transport coefficient in nanoscale devices, namely, the magnitude of the V2B term in the I-V characteristics. This coefficient provides a way to quantify the electron-electron interaction strength, which is of particular interest in our chosen system of single-walled carbon nanotubes. We also

  8. Field-dependent perpendicular magnetic anisotropy and interfacial metal-insulator transition in CoFeB/MgO systems

    NASA Astrophysics Data System (ADS)

    Barsukov, Igor; Fu, Yu; Safranski, C.; Chen, Yu-Jin; Youngblood, B.; Goncalves, A.; Sampaio, L.; Arias, R.; Spasova, M.; Farle, M.; Krivorotov, I.

    2015-03-01

    The CoFeB/MgO systems play a central role in magnetic tunnel junction devices due to the high tunneling magnetoresistance ratio. A strong perpendicular anisotropy (PMA) and voltage-controlled anisotropy are beneficial for spintronics application. We study PMA in thin films of Ta/Co20Fe60B20/MgO in the thickness range of 0.9-2.5 nm and find that it can be best described by the first two order terms. Surprisingly, we find PMA to be strongly field-dependent. Our results show that the field dependence has significant implications for determining and customizing magnetic anisotropy in spintronic applications. Our data suggest that it can be caused by an inhomogeneous interfacial spin pinning with a possibly ferrimagnetic phase at the CoFeB/MgO interface. We perform magnetometry and transport measurements and find a magnetization peak and resistance transitions at 160K, which are consistent with the presence of an interfacial oxide phase undergoing a Morin-like transition.

  9. Metal-insulator transition and novel magnetism driven by Coulomb interactions, spin-orbit coupling and disorder

    NASA Astrophysics Data System (ADS)

    Meetei, Oinam Nganba

    Strong interactions in transition metal oxides can lead to spectacular phenomena like high Tc superconductivity and colossal magnetoresistance which have dominated materials research in the past decades. The goal of this thesis is to examine the interplay of strong correlations with additional degrees of freedom, like spin orbit coupling (SOC), multiple transition metal ions and disorder. We start with a discussion of Mott insulators, with the transition metal in the d4 configuration, where the competition between superexchange interaction and SOC leads to a novel ferromagnetic insulator. In recent years SOC has been at the center stage of condensed matter research because it can produce band insulators in uncorrelated materials with non-trivial topological properties. Here, we focus on the dual role of SOC and strong interactions, naturally realized in 4d/5dd transition metal oxides. We show that in d4 Mott insulators, the local moment can be altered by varying the relative strength of SOC and superexchange, both of which are small parameters compared to the interaction energy scale. In fact, a phase transition from a non-magnetic insulator with J=0 singlets at every site to an orbitally entangled ferromagnetic insulator occurs with decreasing SOC. Our results challenge the commonly held notion that local moments are robust in a Mott insulator. We identify candidate materials and present predictions for Resonant X-ray Scattering (RXS) signatures of the unusual magnetism in d4 Mott insulators. Next we focus on the double perovskite material Sr2 CrOsO6 which is an insulator and has the highest ferromagnetic Tc among all perovskites with a net moment. It presents several puzzles which we address systematically. Its insulating behavior cannot be explained from a band theory point of view or from a naive consideration of Mott physics. Additionally, the net moment at low temperature, M(0)=0.75 μΒ ,is unusual for half-filled bands where anti-ferromagnetism is expected

  10. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    NASA Astrophysics Data System (ADS)

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; Hauser, Adam J.; Stemmer, Susanne

    2016-04-01

    Bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Using space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent.

  11. Directing Colloidal Assembly and a Metal-Insulator Transition Using a Quench-Disordered Porous Rod Template

    NASA Astrophysics Data System (ADS)

    Jadrich, Ryan B.; Schweizer, Kenneth S.

    2014-11-01

    Replica and effective-medium theory methods are employed to elucidate how to massively reconfigure a colloidal assembly to achieve globally homogeneous, strongly clustered, and percolated equilibrium states of high electrical conductivity at low physical volume fractions. A key idea is to employ a quench-disordered, large-mesh rigid-rod network as a templating internal field. By exploiting bulk phase separation frustration and the tunable competing processes of colloid adsorption on the low-dimensional network and fluctuation-driven colloid clustering in the pore spaces, two distinct spatial organizations of greatly enhanced particle contacts can be achieved. As a result, a continuous, but very abrupt, transition from an insulating to metallic-like state can be realized via a small change of either the colloid-template or colloid-colloid attraction strength. The approach is generalizable to more complicated template or colloidal architectures.

  12. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    PubMed Central

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; Hauser, Adam J.; Stemmer, Susanne

    2016-01-01

    Bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Using space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent. PMID:27033955

  13. Sudden slowing down of charge carrier dynamics at the Mott metal-insulator transition in kappa-(D{sub 8}-BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br.

    SciTech Connect

    Brandenburg, J.; Muller, J.; Schlueter, J. A.

    2012-02-01

    We investigate the dynamics of correlated charge carriers in the vicinity of the Mott metal-insulator (MI) transition in the quasi-two-dimensional organic charge-transfer salt {kappa}-(D{sub 8}-BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br by means of fluctuation (noise) spectroscopy. The observed 1/f-type fluctuations are quantitatively very well described by a phenomenological model based on the concept of non-exponential kinetics. The main result is a correlation-induced enhancement of the fluctuations accompanied by a substantial shift of spectral weight to low frequencies in the vicinity of the Mott critical endpoint. This sudden slowing down of the electron dynamics, observed here in a pure Mott system, may be a universal feature of MI transitions. Our findings are compatible with an electronic phase separation in the critical region of the phase diagram and offer an explanation for the not yet understood absence of effective mass enhancement when crossing the Mott transition.

  14. Phonon mode spectroscopy, electron-phonon coupling, and the metal-insulator transition in quasi-one-dimensional M2Mo6Se6

    NASA Astrophysics Data System (ADS)

    Petrović, A. P.; Lortz, R.; Santi, G.; Decroux, M.; Monnard, H.; Fischer, Ø.; Boeri, L.; Andersen, O. K.; Kortus, J.; Salloum, D.; Gougeon, P.; Potel, M.

    2010-12-01

    We present electronic-structure calculations, electrical resistivity data, and the first specific-heat measurements in the normal and superconducting states of quasi-one-dimensional M2Mo6Se6 (M=Tl,In,Rb) . Rb2Mo6Se6 undergoes a metal-insulator transition at ˜170K : electronic-structure calculations indicate that this is likely to be driven by the formation of a dynamical charge-density wave. However, Tl2Mo6Se6 and In2Mo6Se6 remain metallic down to low temperature, with superconducting transitions at Tc=4.2K and 2.85 K, respectively. The absence of any metal-insulator transition in these materials is due to a larger in-plane bandwidth, leading to increased interchain hopping which suppresses the density wave instability. Electronic heat-capacity data for the superconducting compounds reveal an exceptionally low density of states DEF=0.055 states eV-1atom-1 , with BCS fits showing 2Δ/kBTc≥5 for Tl2Mo6Se6 and 3.5 for In2Mo6Se6 . Modeling the lattice specific heat with a set of Einstein modes, we obtain the approximate phonon density of states F(ω) . Deconvolving the resistivity for the two superconductors then yields their electron-phonon transport coupling function αtr2F(ω) . In Tl2Mo6Se6 and In2Mo6Se6 , F(ω) is dominated by an optical “guest ion” mode at ˜5meV and a set of acoustic modes from ˜10 to 30 meV. Rb2Mo6Se6 exhibits a similar spectrum; however, the optical phonon has a lower intensity and is shifted to ˜8meV . Electrons in Tl2Mo6Se6 couple strongly to both sets of modes, whereas In2Mo6Se6 only displays significant coupling in the 10-18 meV range. Although pairing is clearly not mediated by the guest ion phonon, we believe it has a beneficial effect on superconductivity in Tl2Mo6Se6 , given its extraordinarily large coupling strength and higher Tc compared to In2Mo6Se6 .

  15. Valence and origin of metal-insulator transition in Mn doped SrRuO{sub 3} studied by electrical transport, X-ray photoelectron spectroscopy and LSDA+U calculation

    SciTech Connect

    Sahu, Ranjan K.; Pandey, Sudhir K.; Pathak, L.C.

    2011-03-15

    We have studied the valence and electronic properties of Mn doped SrRuO{sub 3} using electrical transport measurement, X-ray photoelectron spectroscopy (XPS) and local (spin) density approximation plus Coulomb interaction strength calculation (LSDA+U). The resistivity data revealed that the system undergoes transition from metal to insulator at the critical Mn doping level, x{approx}0.2, which is accompanied by the structural transition from orthorhombic to tetragonal crystal symmetry. Besides, the significant reduction of the spectral weight at the coherent zone (0.8 eV) of the valence band is observed for x>0.2. The core XPS spectra suggest that both the transition elements exist in the mixed ionic pair, Ru{sup +4}/Ru{sup +5{r_reversible}}Mn{sup +3}/Mn{sup +4}. The detail analysis of the results suggests that the Coulomb correlation effect in conjugation with localization of the charge carriers predominate over the mixed ionic pair effect and responsible for the metal-insulator transition in the series. -- Graphical Abstract: XPS data and electrical transport data show that doping of Mn in metallic SrRuO{sub 3} induces mixed ionic pair Ru(IV)/Ru(V){r_reversible}Mn(III)/Mn(IV) and the system undergoes a transition from metal to insulator at the critical Mn doping level, x{approx}0.2. The origin for the metal-insulator transition has been discussed. Display Omitted Research highlights: {yields} We have investigated the electronic properties of SrRu{sub 1-x}Mn{sub x}O{sub 3} spectroscopically, which shows metal-insulator transition at the critical Mn doping concentartion x{approx}0.2. {yields} We report the valence states of Ru and Mn in the series. {yields} We also report the responsible mechanism for the metal-insulator transition in the series.

  16. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

    NASA Astrophysics Data System (ADS)

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-02-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut - (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices.

  17. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures.

    PubMed

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-01-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut Pb(Mg(1/3)Nb(2/3)O3-(PbTiO3) (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices. PMID:26916618

  18. Hopping conduction in p-type MoS{sub 2} near the critical regime of the metal-insulator transition

    SciTech Connect

    Park, Tae-Eon; Jang, Chaun E-mail: presto@kist.re.kr; Suh, Joonki; Wu, Junqiao; Seo, Dongjea; Park, Joonsuk; Lin, Der-Yuh; Huang, Ying-Sheng; Choi, Heon-Jin; Chang, Joonyeon E-mail: presto@kist.re.kr

    2015-11-30

    We report on temperature-dependent charge and magneto transport of chemically doped MoS{sub 2}, p-type molybdenum disulfide degenerately doped with niobium (MoS{sub 2}:Nb). The temperature dependence of the electrical resistivity is characterized by a power law, ρ(T) ∼ T{sup −0.25}, which indicates that the system resides within the critical regime of the metal-insulator (M-I) transition. By applying high magnetic field (∼7 T), we observed a 20% increase in the resistivity at 2 K. The positive magnetoresistance shows that charge transport in this system is governed by the Mott-like three-dimensional variable range hopping (VRH) at low temperatures. According to relationship between magnetic-field and temperature dependencies of VRH resistivity, we extracted a characteristic localization length of 19.8 nm for MoS{sub 2}:Nb on the insulating side of the M-I transition.

  19. A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7Ca0.3MnO3

    PubMed Central

    Lee, Hong Sub; Choi, Sun Gyu; Park, Hyung-Ho; Rozenberg, M. J.

    2013-01-01

    Resistive random access memory based on the resistive switching phenomenon is emerging as a strong candidate for next generation non-volatile memory. So far, the resistive switching effect has been observed in many transition metal oxides, including strongly correlated ones, such as, cuprate superconductors, colossal magnetoresistant manganites and Mott insulators. However, up to now, no clear evidence of the possible relevance of strong correlation effects in the mechanism of resistive switching has been reported. Here, we study Pr0.7Ca0.3MnO3, which shows bipolar resistive switching. Performing micro-spectroscopic studies on its bare surface we are able to track the systematic electronic structure changes in both, the low and high resistance state. We find that a large change in the electronic conductance is due to field-induced oxygen vacancies, which drives a Mott metal-insulator transition at the surface. Our study demonstrates that strong correlation effects may be incorporated to the realm of the emerging oxide electronics.

  20. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

    PubMed Central

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-01-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut - (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices. PMID:26916618

  1. Polarity and the Metal-Insulator Transition in ultrathin LaNiO3 on SrTiO3

    NASA Astrophysics Data System (ADS)

    Freeland, J. W.; Tung, I. C.; Luo, G.; Zhou, H.; Lee, J. H.; Chang, S. H.; Morgan, D.; Bedzyk, M. J.; Fong, D. D.

    Dimensionality and strain control of nickelates has been shown as a route for control of interesting electronic and magnetic phases. However, little is know about the evolution of atomic structure in these layered architectures and the interplay with these states. Here we present, a detailed study of lattice structures measured real time during the layer-by-layer growth of LaNiO3 on SrTiO3. Using hard X-rays coupled with oxide MBE, we have tracked the lattice structure evolution as a function of depth across the regime where transport shows a clear metal to insulator transition. At the same time X-ray absorption shows the films are closer to LaNiO2.5 when thin and evolve to LaNiO3 by 10 unit cells thickness. Analysis of the structure during growth displays a very complex evolution throughout the film of the lattice parameter and displacement of the B-site from the unit cell center, which theory connects with pathways of compensating the polar mismatch at the surface and interface. Work at the APS, Argonne is supported by the U.S. Department of Energy, Office of Science, and Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

  2. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    DOE PAGESBeta

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; Hauser, Adam J.; Stemmer, Susanne

    2016-04-01

    Here, bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Usingmore » space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent.« less

  3. Metal-Insulator Transition of the New One-Dimensional Organic Conductors with Complete Uniform Stacks: (DMEDO-TTF)2X (X = ClO4 and BF4)

    NASA Astrophysics Data System (ADS)

    Kumeta, Shohei; Kawamoto, Tadashi; Shirahata, Takashi; Misaki, Yohji; Mori, Takehiko

    2016-09-01

    The structural, transport, and magnetic properties of the new organic conductors (DMEDO-TTF)2X (X = ClO4 and BF4), where DMEDO-TTF is dimethyl(ethylenedioxy)tetrathiafulvalene, have been investigated. These compounds have a complete uniform stack structure, indicating that a quasi-one-dimensional 3/4-filled band without a dimerization gap is realized. The ClO4 and BF4 salts show a first-order metal-insulator (MI) transition at approximately 190 and 210 K, respectively, in the cooling process. The ground state is a nonmagnetic insulator on the basis of magnetic susceptibility measurements. Low-temperature X-ray diffraction measurements show that the MI transition originates in the anion ordering transition with a superstructure wave vector of q = (0,1/2,0) corresponding to the stacking direction; the uniform donor stacking structure changes to the tetramerized structure with a large shift of the donors. The shift of the anion toward the central two donors in a tetramer indicates that the insulating phase is a charge-density-wave state.

  4. Tunable metal-insulator transition in Nd{sub 1−x}Y{sub x}NiO{sub 3} (x = 0.3, 0.4) perovskites thin film at near room temperature

    SciTech Connect

    Shao, Tao; Qi, Zeming Wang, Yuyin; Li, Yuanyuan; Yang, Mei; Zhang, Guobin; Wang, Yu; Liu, Miao

    2015-07-13

    Metal-insulator transition (MIT) occurs due to the charge disproportionation and lattice distortions in rare-earth nickelates. Existing studies revealed that the MIT behavior of rare-earth nickelates is fairly sensitive to external stress/pressure, suggesting a viable route for MIT strain engineering. Unlike applying extrinsic strain, the MIT can also be modulated by through rare-earth cation mixing, which can be viewed as intrinsic quantum stress. We choose Nd{sub 1−X}Y{sub X}NiO{sub 3} (x = 0.3, 0.4) perovskites thin films as a prototype system to exhibit the tunable sharp MIT at near room temperature. By adjusting Y concentration, the transition temperature of the thin films can be changed within the range of 340–360 K. X-ray diffraction, X-ray absorption fine structure (XAFS), and in situ infrared spectroscopy are employed to probe the structural and optical property variation affected by composition and temperature. The infrared transmission intensity decreases with temperature across the MIT, indicating a pronounced thermochromic effect. Meanwhile, the XAFS result exhibits that the crystal atomistic structure changes accompanying with the Y atoms incorporation and MIT phase transition. The heavily doped Y atoms result in the pre-edge peak descent and Ni-O bond elongation, suggesting an enhanced charge disproportionation effect and the weakening of hybridization between Ni-3d and O-2p orbits.

  5. Chromium-niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Miyazaki, Kenichi; Shibuya, Keisuke; Suzuki, Megumi; Sakai, Kenichi; Fujita, Jun-ichi; Sawa, Akihito

    2016-05-01

    We investigated the effects of chromium (Cr) and niobium (Nb) co-doping on the temperature coefficient of resistance (TCR) and the thermal hysteresis of the metal-insulator transition of vanadium dioxide (VO2) films. We determined the TCR and thermal-hysteresis-width diagram of the V1-x-yCrxNbyO2 films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V0.90Cr0.06Nb0.04O2 film grown on a TiO2-buffered SiO2/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO2-based uncooled bolometers.

  6. Simultaneous metal-insulator and antiferromagnetic transitions in orthorhombic perovskite iridate S r0.94I r0.78O2.68 single crystals

    NASA Astrophysics Data System (ADS)

    Zheng, H.; Terzic, J.; Ye, Feng; Wan, X. G.; Wang, D.; Wang, Jinchen; Wang, Xiaoping; Schlottmann, P.; Yuan, S. J.; Cao, G.

    2016-06-01

    The orthorhombic perovskite SrIr O3 is a semimetal, an intriguing exception in iridates where the strong spin-orbit interaction coupled with electron correlations tends to impose an insulating state. We report results of our investigation of bulk single-crystal S r0.94I r0.78O2.68 or Ir-deficient, orthorhombic perovskite SrIr O3 . It retains the same crystal structure as stoichiometric SrIr O3 but exhibits a sharp, simultaneous antiferromagnetic (AFM) and metal-insulator (MI) transition occurring in the basal-plane resistivity at 185 K. Above it, the basal-plane resistivity features an extended regime of almost linear temperature dependence up to 800 K but the strong electronic anisotropy renders an insulating behavior in the out-of-plane resistivity. The Hall resistivity undergoes an abrupt sign change and grows below 40 K, which along with the Sommerfeld constant of 20 mJ /mol K2 suggests a multiband effect. All results including our first-principles calculations underscore a delicacy of the paramagnetic, metallic state in SrIr O3 that is in close proximity to an AFM insulating state. The contrasting ground states in isostructural S r0.94I r0.78O2.68 and SrIr O3 illustrate a critical role of lattice distortions and Ir deficiency in rebalancing the ground state in the iridates. Finally, the concurrent AFM and MI transitions reveal a direct correlation between the magnetic transition and formation of an activation gap in the iridate, which is conspicuously absent in S r2Ir O4 .

  7. Metal-insulator transition in AC{sub 60}:RbC{sub 60} and KC{sub 60}

    SciTech Connect

    Khazeni, K.; Crespi, V.H.; Hone, J.; Zettl, A.; Cohen, M.L. |

    1997-09-01

    At zero pressure polymerized RbC{sub 60} is an insulator, whereas polymerized KC{sub 60} is a metal with a slight low-temperature resistive upturn. We report measurements of the resistivity of RbC{sub 60} under pressure, finding a hysteretic resistive transition in RbC{sub 60} near 200 K at 5 kbar, at which point the material transforms from insulator to metal. Correcting the resistivity to constant volume, both materials are metallic below the transition with a common low-temperature resistive upturn which is suppressed under compression. {copyright} {ital 1997} {ital The American Physical Society}

  8. Transport properties and metal-insulator transition in oxygen deficient LaNiO3: a density functional theory study

    NASA Astrophysics Data System (ADS)

    Misra, D.; Kundu, T. K.

    2016-09-01

    Density functional theory with appropriate functional has been employed to investigate the metal to insulator transition in oxygen deficient LaNiO3-x (x = 0.0, 0.25, 0.5, 1.0) compounds. While the metallic nature of LaNiO3 is characterized by the low temperature Fermi liquid behavior of resistivity and a finite density of states at the Fermi level, the density of states and the transport properties clearly identify LaNiO2.75 as a semiconductor, and LaNiO2.5 as an insulator, which is followed by another insulator to semiconductor transition with further increase of x to ‘1’ in LaNiO2. This oxygen vacancy controlled metal to insulator transition is explained on the basis of non-adiabatic polaronic transport. From the covalency metric calculation of the chemical bonding and the Bader charge transfer analysis, this metal to insulator transition is attributed to the enhanced covalent part in the chemical bonding and reduced charge transfer from Ni to O atoms in LaNiO3-x compounds.

  9. Metal-Insulator-Semiconductor Photodetectors

    PubMed Central

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows. PMID:22163382

  10. Superconductivity and crystal structural origins of the metal-insulator transition in Ba6 -xSrxNb10O30 tetragonal tungsten bronzes

    NASA Astrophysics Data System (ADS)

    Kolodiaznyi, Taras; Sakurai, Hiroya; Isobe, Masaaki; Matsushita, Yoshitaka; Forbes, Scott; Mozharivskyj, Yurij; Munsie, Timothy J. S.; Luke, Graeme M.; Gurak, Mary; Clarke, David R.

    2015-12-01

    Ba6 -xSrxNb10O30 solid solution with 0 ≤ x ≤6 forms the filled tetragonal tungsten bronze (TTB) structure. The Ba-end member crystallizes in the highest symmetry P 4 /m b m space group (a =b =12.5842 (18 )Å and c =3.9995 (8 )Å ) and so do all the compositions with 0 ≤ x ≤5 . The Sr-end member of the solid solution crystallizes in the tentatively assigned A m a m space group (a *=17.506 (4 )Å , b *=34.932 (7 )Å , and c *=7.7777 (2 )Å ). The latter space group is related to the parent P 4 /m b m TTB structure as a * ≈ √{2 }a ,b * ≈2 √{2 }a ,c *=2 c . Low-temperature specific heat measurements indicate that the Ba-rich compositions with x ≤2 are conventional BCS superconductors with TC ≤1.6 K and superconducting energy gaps of ≤0.38 meV. The values of the TC in the cation-filled Nb-based TTBs reported here are comparable with those of the unfilled KxWO3 and NaxWO3 TTBs having large alkali ion deficiency. As the unit cell volume decreases with increasing x , an unexpected metal-insulator transition (MIT) in Ba6 -xSrxNb10O30 occurs at x ≥3 . We discuss the possible origins of the MIT in terms of the carrier concentration, symmetry break, and Anderson localization.

  11. Metal-insulator transition and tunable Dirac-cone surface state in the topological insulator TlBi1 -xSbxTe2 studied by angle-resolved photoemission

    NASA Astrophysics Data System (ADS)

    Trang, Chi Xuan; Wang, Zhiwei; Yamada, Keiko; Souma, Seigo; Sato, Takafumi; Takahashi, Takashi; Segawa, Kouji; Ando, Yoichi

    2016-04-01

    We report a systematic angle-resolved photoemission spectroscopy on topological insulator (TI) TlBi1 -xSbxTe2 which is bulk insulating at 0.5 ≲x ≲0.9 and undergoes a metal-insulator-metal transition with the Sb content x . We found that this transition is characterized by a systematic hole doping with increasing x , which results in the Fermi-level crossings of the bulk conduction and valence bands at x ˜0 and x ˜1 , respectively. The Dirac point of the topological surface state is gradually isolated from the valence-band edge, accompanied by a sign reversal of Dirac carriers. We also found that the Dirac velocity is the largest among known solid-solution TI systems. The TlBi1 -xSbxTe2 system thus provides an excellent platform for Dirac-cone engineering and device applications of TIs.

  12. Role of microstructures on the M1-M2 phase transition in epitaxial VO2 thin films

    PubMed Central

    Ji, Yanda; Zhang, Yin; Gao, Min; Yuan, Zhen; Xia, Yudong; Jin, Changqing; Tao, Bowan; Chen, Chonglin; Jia, Quanxi; Lin, Yuan

    2014-01-01

    Vanadium dioxide (VO2) with its unique sharp resistivity change at the metal-insulator transition (MIT) has been extensively considered for the near-future terahertz/infrared devices and energy harvesting systems. Controlling the epitaxial quality and microstructures of vanadium dioxide thin films and understanding the metal-insulator transition behaviors are therefore critical to novel device development. The metal-insulator transition behaviors of the epitaxial vanadium dioxide thin films deposited on Al2O3 (0001) substrates were systematically studied by characterizing the temperature dependency of both Raman spectrum and Fourier transform infrared spectroscopy. Our findings on the correlation between the nucleation dynamics of intermediate monoclinic (M2) phase with microstructures will open a new avenue for the design and integration of advanced heterostructures with controllable multifunctionalities for sensing and imaging system applications. PMID:24798056

  13. The metal-insulator transition in nanocrystalline Pr0.67Ca0.33MnO3: the correlation between supercooling and kinetic arrest.

    PubMed

    Rawat, R; Chaddah, P; Bag, Pallab; Das, Kalipada; Das, I

    2012-10-17

    The transition and hysteresis widths of a disorder broadened first order magnetic transition vary in H-T space which influences the co-existing phase fraction at low temperature arising due to kinetic arrest of the first order transition. We explored the role of change in the relative width of the supercooling/superheating band and kinetic arrest band for a ferromagnetic metallic to antiferromagnetic insulating transition. It is shown that for a correlated kinetic arrest and supercooling bands, the topology of the devitrification curves (or transformation across the (H(K),T(K)) band during warming) changes with the change in the relative width of these two bands. In addition to this, for a broader kinetic arrest band, the transformation temperature across the superheating band under constant H now depends on the arrested phase fraction. These predictions have been tested on nanocrystalline Pr(0.67)Ca(0.33)MnO(3), which is known to show a large variation in hysteresis width in H-T space. This is the first report where correlation between the kinetic arrest band and the supercooling band has been shown experimentally, in contrast to the universal observation of anticorrelation reported so far.

  14. Suppression of the metal-insulator transition by magnetic field in (Pr{sub 1−y}Y{sub y}){sub 0.7}Ca{sub 0.3}CoO{sub 3} (y = 0.0625)

    SciTech Connect

    Naito, Tomoyuki Fujishiro, Hiroyuki; Nishizaki, Terukazu; Kobayashi, Norio; Hejtmánek, Jiří; Knížek, Karel; Jirák, Zdeněk

    2014-06-21

    The (Pr{sub 1−y}Y{sub y}){sub 0.7}Ca{sub 0.3}CoO{sub 3} compound (y = 0.0625, T{sub MI-SS}=40 K), at the lower limit for occurrence of the first-order metal-insulator (MI) and simultaneous spin-state (SS) transitions, has been studied using electrical resistivity and magnetization measurements in magnetic fields up to 17 T. The isothermal experiments demonstrate that the low-temperature insulating phase can be destabilized by an applied field and the metallic phase returns well below the transition temperature T{sub MI-SS}. The reverse process with decreasing field occurs with a significant hysteresis. The temperature scans taken at fixed magnetic fields reveal a parabolic-like decrease in T{sub MI-SS} with increasing field strength and a complete suppression of the MI-SS transition in fields above 9 T.

  15. Cosmological phase transitions

    SciTech Connect

    Kolb, E.W. |

    1993-10-01

    If modern ideas about the role of spontaneous symmetry breaking in fundamental physics are correct, then the Universe should have undergone a series of phase transitions early in its history. The study of cosmological phase transitions has become an important aspect of early-Universe cosmology. In this lecture I review some very recent work on three aspects of phase transitions: the electroweak transition, texture, and axions.

  16. Characterization of quantum phase transition using holographic entanglement entropy

    NASA Astrophysics Data System (ADS)

    Ling, Yi; Liu, Peng; Wu, Jian-Pin

    2016-06-01

    The entanglement exhibits extremal or singular behavior near quantum critical points (QCPs) in many condensed matter models. These intriguing phenomena, however, still call for a widely accepted understanding. In this paper we study this issue in holographic framework. We investigate the connection between the holographic entanglement entropy (HEE) and the quantum phase transition (QPT) in a lattice-deformed Einstein-Maxwell-Dilaton theory. Novel backgrounds exhibiting metal-insulator transitions (MIT) have been constructed in which both metallic phase and insulating phase have vanishing entropy density in zero temperature limit. We find that the first order derivative of HEE with respect to lattice parameters exhibits extremal behavior near QCPs. We propose that it would be a universal feature that HEE or its derivatives with respect to system parameters can characterize QPT in a generic holographic system. Our work opens a window for understanding the relation between entanglement and the QPT from a holographic perspective.

  17. Four-dimensional ultrafast electron microscopy of phase transitions.

    PubMed

    Grinolds, Michael S; Lobastov, Vladimir A; Weissenrieder, Jonas; Zewail, Ahmed H

    2006-12-01

    Reported here is direct imaging (and diffraction) by using 4D ultrafast electron microscopy (UEM) with combined spatial and temporal resolutions. In the first phase of UEM, it was possible to obtain snapshot images by using timed, single-electron packets; each packet is free of space-charge effects. Here, we demonstrate the ability to obtain sequences of snapshots ("movies") with atomic-scale spatial resolution and ultrashort temporal resolution. Specifically, it is shown that ultrafast metal-insulator phase transitions can be studied with these achieved spatial and temporal resolutions. The diffraction (atomic scale) and images (nanometer scale) we obtained manifest the structural phase transition with its characteristic hysteresis, and the time scale involved (100 fs) is now studied by directly monitoring coordinates of the atoms themselves. PMID:17130445

  18. Enhanced ferromagnetic and metal insulator transition in Sm0.55Sr0.45MnO3 thin films: Role of oxygen vacancy induced quenched disorder

    NASA Astrophysics Data System (ADS)

    Srivastava, M. K.; Siwach, P. K.; Kaur, A.; Singh, H. K.

    2010-11-01

    Effect of quenched disorder (QD) caused by oxygen vacancy (OV) and substrate induced inhomogeneous compressive strain, on the magnetic and transport properties of oriented polycrystalline Sm0.55Sr0.45MnO3 thin films is investigated. QD is related intimately to the ordering/disordering of the OVs and controls the paramagnetic-ferromagnetic/insulator-metal transition. OV ordered films show enhanced TC/TIM˜165 K, which is depressed by oxygen annealing. OV disordering realized by quenching reduces TC/TIM. The first order IM transition observed in SSMO single crystals is transformed into nonhysteretic and continuous one in the OV ordered films. QD appears to be diluted by OV disorder/annihilation and results in stronger carrier localization.

  19. Metal insulator transition and magnetotransport anomalies in perovskite SrIr{sub 0.5}Ru{sub 0.5}O{sub 3} thin films

    SciTech Connect

    Biswas, Abhijit; Lee, Yong Woo; Kim, Sang Woo; Jeong, Yoon Hee

    2015-03-21

    We investigated the nature of transport and magnetic properties in SrIr{sub 0.5}Ru{sub 0.5}O{sub 3} (SIRO), which has characteristics intermediate between a correlated non-Fermi liquid state and an itinerant Fermi liquid state, by growing perovskite thin films on various substrates (e.g., SrTiO{sub 3} (001), (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}TaAlO{sub 6}){sub 0.7} (001), and LaAlO{sub 3} (001)). We observed systematic variation of underlying substrate dependent metal-to-insulator transition temperatures (T{sub MIT} ∼ 80 K on SrTiO{sub 3}, ∼90 K on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}TaAlO{sub 6}){sub 0.7}, and ∼100 K on LaAlO{sub 3}) in resistivity. At temperature 300 K ≥ T ≥ T{sub MIT}, SIRO is metallic and its resistivity follows a T{sup 3/2} power law, whereas insulating nature at T < T{sub MIT} is due to the localization effect. Magnetoresistance (MR) measurement of SIRO on SrTiO{sub 3} (001) shows negative MR at T < 25 K and positive MR at T > 25 K, with negative MR ∝ B{sup 1/2} and positive MR ∝ B{sup 2}; consistent with the localized-to-normal transport crossover dynamics. Furthermore, observed spin glass like behavior of SIRO on SrTiO{sub 3} (001) at T < 25 K in the localized regime validates the hypothesis that (Anderson) localization favors glassy ordering. These remarkable features provide a promising approach for future applications and of fundamental interest in oxide thin films.

  20. Spin-orbit tuned metal-insulator transitions in single-crystal Sr₂Ir1–xRhxO₄ (0≤x≤1)

    DOE PAGESBeta

    Qi, T. F.; Korneta, O. B.; Li, L.; Butrouna, K.; Cao, V. S.; Wan, Xiangang; Schlottmann, P.; Kaul, R. K.; Cao, G.

    2012-09-06

    Sr₂IrO₄ is a magnetic insulator driven by spin-orbit interaction (SOI) whereas the isoelectronic and isostructural Sr₂RhO₄ is a paramagnetic metal. The contrasting ground states have been shown to result from the critical role of the strong SOI in the iridate. Our investigation of structural, transport, magnetic, and thermal properties reveals that substituting 4d Rh⁴⁺ (4d⁵) ions for 5d Ir⁴⁺ (5d⁵) ions in Sr₂IrO₄ directly reduces the SOI and rebalances the competing energies so profoundly that it generates a rich phase diagram for Sr₂Ir1–xRhxO₄ featuring two major effects: (1) Light Rh doping (0 ≤ x ≤ 0.16) prompts a simultaneous andmore » precipitous drop in both the electrical resistivity and the magnetic ordering temperature TC, which is suppressed to zero at x = 0.16 from 240 K at x = 0. (2) However, with heavier Rh doping [0.24 < x < 0.85 (±0.05)] disorder scattering leads to localized states and a return to an insulating state with spin frustration and exotic magnetic behavior that only disappears near x = 1. The intricacy of Sr₂Ir1–xRhxO₄ is further highlighted by comparison with Sr₂Ir1–xRuxO₄ where Ru⁴⁺ (4d⁴) drives a direct crossover from the insulating to metallic states.« less

  1. Direct observation of nanoscale Peltier and Joule effects at metal-insulator domain walls in vanadium dioxide nanobeams.

    PubMed

    Favaloro, Tela; Suh, Joonki; Vermeersch, Bjorn; Liu, Kai; Gu, Yijia; Chen, Long-Qing; Wang, Kevin X; Wu, Junqiao; Shakouri, Ali

    2014-05-14

    The metal to insulator transition (MIT) of strongly correlated materials is subject to strong lattice coupling, which brings about the unique one-dimensional alignment of metal-insulator (M-I) domains along nanowires or nanobeams. Many studies have investigated the effects of stress on the MIT and hence the phase boundary, but few have directly examined the temperature profile across the metal-insulating interface. Here, we use thermoreflectance microscopy to create two-dimensional temperature maps of single-crystalline VO2 nanobeams under external bias in the phase coexisting regime. We directly observe highly localized alternating Peltier heating and cooling as well as Joule heating concentrated at the M-I domain boundaries, indicating the significance of the domain walls and band offsets. Utilizing the thermoreflectance technique, we are able to elucidate strain accumulation along the nanobeam and distinguish between two insulating phases of VO2 through detection of the opposite polarity of their respective thermoreflectance coefficients. Microelasticity theory was employed to predict favorable domain wall configurations, confirming the monoclinic phase identification.

  2. Electronic Griffiths Phases and Quantum Criticality at Disordered Mott Transitions

    NASA Astrophysics Data System (ADS)

    Dobrosavljevic, Vladimir

    2012-02-01

    The effects of disorder are investigated in strongly correlated electronic systems near the Mott metal-insulator transition. Correlation effects are foundootnotetextE. C. Andrade, E. Miranda, and V. Dobrosavljevic, Phys. Rev. Lett., 102, 206403 (2009). to lead to strong disorder screening, a mechanism restricted to low-lying electronic states, very similar to what is observed in underdoped cuprates. These results suggest, however, that this effect is not specific to disordered d-wave superconductors, but is a generic feature of all disordered Mott systems. In addition, the resulting spatial inhomogeneity rapidly increasesootnotetextE. C. Andrade, E. Miranda, and V. Dobrosavljevic, Phys. Rev. Lett., 104 (23), 236401 (2010). as the Mott insulator is approached at fixed disorder strength. This behavior, which can be described as an Electronic Griffiths Phase, displays all the features expected for disorder-dominated Infinite-Randomness Fixed Point scenario of quantum criticality.

  3. String mediated phase transitions

    NASA Technical Reports Server (NTRS)

    Copeland, ED; Haws, D.; Rivers, R.; Holbraad, S.

    1988-01-01

    It is demonstrated from first principles how the existence of string-like structures can cause a system to undergo a phase transition. In particular, the role of topologically stable cosmic string in the restoration of spontaneously broken symmetries is emphasized. How the thermodynamic properties of strings alter when stiffness and nearest neighbor string-string interactions are included is discussed.

  4. Metal-insulator crossover in multilayered MoS2.

    PubMed

    Park, Min Ji; Yi, Sum-Gyun; Kim, Joo Hyung; Yoo, Kyung-Hwa

    2015-10-01

    The temperature dependence of electrical transport properties was investigated for multilayered MoS2 field effect transistor devices with thicknesses of 3-22 nm. Some devices showed typical n-type semiconducting behavior, while others exhibited metal-insulator crossover (MIC) from metallic to insulating conduction at finite temperatures. The latter effect occurred near zero gate voltage or at high positive gate voltages. Analysis of Raman spectroscopy revealed the key difference that devices with MIC have a metallic 1T phase as well as a semiconducting 2H phase, whereas devices without the MIC did not have a metallic 1T phase. These results suggest that the metallic 1T phase may contribute to inducing the MIC.

  5. Large epitaxial bi-axial strain induces a Mott-like phase transition in VO{sub 2}

    SciTech Connect

    Kittiwatanakul, Salinporn; Wolf, Stuart A.; Lu, Jiwei

    2014-08-18

    The metal insulator transition (MIT) in vanadium dioxide (VO{sub 2}) has been an important topic for recent years. It has been generally agreed upon that the mechanism of the MIT in bulk VO{sub 2} is considered to be a collaborative Mott-Peierls transition, however, the effect of strain on the phase transition is much more complicated. In this study, the effect of the large strain on the properties of VO{sub 2} films was investigated. One remarkable result is that highly strained epitaxial VO{sub 2} thin films were rutile in the insulating state as well as in the metallic state. These highly strained VO{sub 2} films underwent an electronic phase transition without the concomitant Peierls transition. Our results also show that a very large tensile strain along the c-axis of rutile VO{sub 2} resulted in a phase transition temperature of ∼433 K, much higher than in any previous report. Our findings elicit that the metal insulator transition in VO{sub 2} can be driven by an electronic transition alone, rather the typical coupled electronic-structural transition.

  6. Visualization of local phase transition behaviors in ultrathin VO2/TiO2 thin films

    NASA Astrophysics Data System (ADS)

    Sohn, Ahrum; Kanki, Terou; Tanaka, Hidekazu; Kim, Dong-Wook

    VO2 undergoes the first order phase transition and two electronic phases can coexist near the critical temperature. We investigated evolution of the surface work function maps of epitaxial VO2/TiO2 thin films (thickness: 15, 30, and 45 nm) using Kelvin probe force microscopy (KPFM) measurements in the temperature range of 285-330 K. Fully strained thin films were almost free of grain boundaries and thicker films had dislocations caused by strain relaxation. The sample's work function decreases, while spanning the metal-insulator transition (MIT). The work function maps clearly revealed coexistence of the two distinct phase domains. The surface area fraction of the insulating phase near the dislocations was higher than that in other regions. Thicker films have complicated domain patterns; hence, the three-dimensional percolation model properly described the MIT behaviors. In contrast, the two-dimensional percolation model well explained the transition behaviors of uniformly strained thinner films.

  7. Nonpercolative nature of the metal-insulator transition and persistence of local Jahn-Teller distortions in the rhombohedral regime of La1 -xCaxMnO3

    NASA Astrophysics Data System (ADS)

    Shatnawi, Mouath; Bozin, Emil S.; Mitchell, J. F.; Billinge, Simon J. L.

    2016-04-01

    Evolution of the average and local crystal structure of Ca-doped LaMnO3 has been studied across the metal to insulator (MI) and the orthorhombic to rhombohedral (OR) structural phase transitions over a broad temperature range for two Ca concentrations (x =0.18 ,0.22 ). Combined Rietveld and high real space resolution atomic pair distribution function (PDF) analysis of neutron total scattering data was carried out with aims of exploring the possibility of nanoscale phase separation (PS) in relation to MI transition, and charting the evolution of local Jahn-Teller (JT) distortion of MnO6 octahedra across the OR transition at TS˜720 K. The study utilized explicit two-phase PDF structural modeling, revealing that away from TMI there is no evidence for nanoscale phase coexistence. The local JT distortions disappear abruptly upon crossing into the metallic regime both with doping and temperature, with only a small temperature-independent signature of quenched disorder being observable at low temperature as compared to CaMnO3. The results hence do not support the percolative scenario for the MI transition in La1 -xCaxMnO3 based on PS, and question its ubiquity in the manganites. In contrast to LaMnO3 that exhibits long-range orbital correlations and sizable octahedral distortions at low temperature, the doped samples with compositions straddling the MI boundary exhibit correlations (in the insulating regime) limited to only ˜1 nm with observably smaller distortions. In the x =0.22 sample local JT distortions are found to persist across the OR transition and deep into the R phase (up to ˜1050 K), where they are crystallographically prohibited. Their magnitude and subnanometer spatial extent remain unchanged.

  8. Non percolative nature of the metal-insulator transition and persistence of local Jahn-Teller distortions in the rhombohedral regime of La1-xCaxMnO3

    DOE PAGESBeta

    Shatnawi, Mouath; Bozin, Emil S.; Mitchell, J. F.; Billinge, Simon J. L.

    2016-04-25

    Evolution of the average and local crystal structure of Ca-doped LaMnO3 has been studied across the metal to insulator (MI) and the orthorhombic to rhombohedral (OR) structural phase transitions over a broad temperature range for two Ca concentrations (x = 0.18,0.22). Combined Rietveld and high real space resolution atomic pair distribution function (PDF) analysis of neutron total scattering data was carried out with aims of exploring the possibility of nanoscale phase separation (PS) in relation to MI transition, and charting the evolution of local Jahn-Teller (JT) distortion of MnO6 octahedra across the OR transition at TS~720 K. The study utilizedmore » explicit two-phase PDF structural modeling, revealing that away from TMI there is no evidence for nanoscale phase coexistence. The local JT distortions disappear abruptly upon crossing into the metallic regime both with doping and temperature, with only a small temperature-independent signature of quenched disorder being observable at low temperature as compared to CaMnO3. The results hence do not support the percolative scenario for the MI transition in La1–xCaxMnO3 based on PS, and question its ubiquity in the manganites. In contrast to LaMnO3 that exhibits long-range orbital correlations and sizable octahedral distortions at low temperature, the doped samples with compositions straddling the MI boundary exhibit correlations (in the insulating regime) limited to only ~1 nm with observably smaller distortions. In the x = 0.22 sample local JT distortions are found to persist across the OR transition and deep into the R phase (up to ~1050 K), where they are crystallographically prohibited. As a result, their magnitude and subnanometer spatial extent remain unchanged.« less

  9. Symmetry in DIET phase transitions

    NASA Astrophysics Data System (ADS)

    Zhang, J. P.; Marks, L. D.

    1989-11-01

    Analysis of the route of the phase transitions in transition metal oxides driven by DIET of oxygen from the surfaces observed by high resolution electron microscopy indicates that there is a symmetry selection rule. The phase transitions are to a structure with a higher point group symmetry where the new phase with a lower oxygen content is either one with a supergroup symmetry with respect to the original phase, or is an amorphous intermediary. The final phase has the highest symmetry and is also a metallic conductor. If a possible lower oxygen content phase does not have the correct supergroup symmetry, it is not formed. It is also found that the point group is conserved during the phase transition if the oxide belongs to the highest groups O h or D 6h. This symmetry selection rule can therefore be used to predict the route of the phase transition. The symmetry rule operates when the phase transition is diffusional.

  10. A study of quantum phase transitions in two dimensional electron systems

    NASA Astrophysics Data System (ADS)

    Wan, Xin

    2000-10-01

    This thesis discusses possible theoretical explanation of novel phase transitions in two dimensional electron systems, including quantum Hall transition at strong as well as weak magnetic fields, and the zero-magnetic-field metal-insulator transition. For the quantum Hall transitions, studied for non-interacting electrons, a truncation technique is proposed to project the Hilbert space of a tight-binding lattice model to an individual magnetic subband (single Landau level) or multiple subbands (multiple Landau levels). Projection of the Hilbert space to a center subband is also proposed for study of possible quantum Hall transitions with Hall conductance change Deltasigma xy = ne2/h( n ≥ 2), which seem to exist in dirty samples at weak magnetic fields in different experimental systems. Algorithms of calculating Thouless number and Chern number, which relate to the longitudinal conductance and the Hall conductance, respectively, are developed within the truncated Hilbert space. The finite-size scaling theory is employed in analyzing the numerical data to identify phases in the thermodynamic limit. The effect of mass anisotropy on the Wigner crystallization transition in an interacting two-dimensional electron gas (in the absence of disorder) is also explored to test the connection between the zero-field metal-insulator transition and the Wigner crystallization transition. The static and dynamical properties of a two-dimensional Wigner crystal have been calculated for arbitrary two-dimensional Bravais lattices in the presence of anisotropic mass, as may be obtainable in Si MOSFETs with (110) surface. By studying the stability of all possible lattices, we find significant change in the crystal structure and melting density of the electron lattice with the lowest ground state energy.

  11. Quantum phase transition in space

    SciTech Connect

    Damski, Bogdan; Zurek, Wojciech H

    2008-01-01

    A quantum phase transition between the symmetric (polar) phase and the phase with broken symmetry can be induced in a ferromagnetic spin-1 Bose-Einstein condensate in space (rather than in time). We consider such a phase transition and show that the transition region in the vicinity of the critical point exhibits scalings that reflect a compromise between the rate at which the transition is imposed (i.e., the gradient of the control parameter) and the scaling of the divergent healing length in the critical region. Our results suggest a method for the direct measurement of the scaling exponent {nu}.

  12. Uniaxial pressure effect of Metal-Insulator Transition (TMI) in oriented Sm0.55(Sr0.5Ca0.5)0.45MnO3

    NASA Astrophysics Data System (ADS)

    Arumugam, Sonachalam; Mohan Radheep, D.; Sarkar, P.; Mandal, P.; Arumugam Team; Prabhat Mandal Collaboration

    2013-06-01

    Perovskite type manganites R1 - xAxMnO3 (R: rare earth ions, A: alkaline earth ions) exhibit various fundamental phenomena like colossal magnetoresistance (CMR), phase separation, and first-order ferromagnetic (FM) to paramagnetic (PM) phase transition etc. Similar to CMR, piezoresistance (PR), the change in electrical resistance in response to external pressure, can also be important parameter for various technological applications. Several studies shows that the order of phase transition can be changed either by applying external perturbations like magnetic field, pressure (P) , etc. or internally like doping etc. SSCMO single crystal was grown using floating zone technique and the quality was carefully checked and aligned along the c axis as well as ab-plane. We have investigated the effect of uniaxial pressure (P) on electrical resistivity along the ab-plane and c - axis in a single crystal of SSCMO. A huge PR ~107 % at P = 90 MPa and a remarkable increase (~79 K/GPa) of TMI have been observed with the application of P || c - axis, while TMI decreases at the rate of ~77 K/GPa for P⊥ c axis. These values of PR and dTMI /dP are much larger than those observed in other perovskite and bilayer manganites. Hence, these materials may be used for various technological applications. The authors SA and DMR wishes to thank DST, UGC and CSIR-SRF scheme (India) for the financial support to carry out the research work.

  13. Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo{sub 0.9}Ni{sub 0.1}S{sub 1.8}

    SciTech Connect

    Fisher, B.; Genossar, J.; Chashka, K. B.; Patlagan, L.; Reisner, G. M.

    2014-04-14

    The layered compound BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (0.05 < x < 0.2 and 0.05 < y < 0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around 200 K with huge hysteresis (∼40 K) and large volume change (∼0.01). Here, we report on unusual voltage-controlled resistive switching followed by current-controlled resistive switching induced by self-heating in polycrystalline BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (nominal x = 0.1 and y = 0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one.

  14. Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo0.9Ni0.1S1.8

    NASA Astrophysics Data System (ADS)

    Fisher, B.; Genossar, J.; Chashka, K. B.; Patlagan, L.; Reisner, G. M.

    2014-04-01

    The layered compound BaCo1-xNixS2-y (0.05 < x < 0.2 and 0.05 < y < 0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around 200 K with huge hysteresis (˜40 K) and large volume change (˜0.01). Here, we report on unusual voltage-controlled resistive switching followed by current-controlled resistive switching induced by self-heating in polycrystalline BaCo1-xNixS2-y (nominal x = 0.1 and y = 0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one.

  15. Theory of antiferroelectric phase transitions

    NASA Astrophysics Data System (ADS)

    Tolédano, Pierre; Guennou, Mael

    2016-07-01

    At variance with structural ferroic phase transitions which give rise to macroscopic tensors coupled to macroscopic fields, criteria defining antiferroelectric (AFE) phase transitions are still under discussion due to the absence of specific symmetry properties characterizing their existence. They are recognized by the proximity of a ferroelectric (FE) phase induced under applied electric field, with a double hysteresis loop relating the induced polarization to the electric field and a typical anomaly of the dielectric permittivity. Here, we show that there exist indeed symmetry criteria defining AFE transitions. They relate the local symmetry of the polar crystallographic sites emerging at an AFE phase transition with the macroscopic symmetry of the AFE phase. The dielectric properties of AFE transitions are deduced from a Landau theoretical model in which ferroelectric and ferrielectric phases are shown to stabilize as the result of specific symmetry-allowed couplings of the AFE order parameter with the field-induced polarization.

  16. Fluctuation driven electroweak phase transition

    NASA Technical Reports Server (NTRS)

    Gleiser, Marcelo; Kolb, Edward W.

    1991-01-01

    We examine the dynamics of the electroweak phase transition in the early Universe. For Higgs masses in the range 46 less than or = M sub H less than or = 150 GeV and top quark masses less than 200 GeV, regions of symmetric and asymmetric vacuum coexist to below the critical temperature, with thermal equilibrium between the two phases maintained by fluctuations of both phases. We propose that the transition to the asymmetric vacuum is completed by percolation of these subcritical fluctuations. Our results are relevant to scenarios of baryogenesis that invoke a weakly first-order phase transition at the electroweak scale.

  17. Phase Transitions and Gravitational Collapse

    NASA Astrophysics Data System (ADS)

    Gentile, Nicholas A.

    1994-01-01

    Results are presented for numerical calculations of gravitational collapses and explosions. Two effects are studied. The first involves aspects of the numerical models used in almost all current gravitational collapse calculations. The second involves phase transitions in the equation of state of dense matter. A (1+1) dimensional general relativistic hydrodynamics code was constructed to investigate both effects. A modification of standard artificial viscosity methods was developed. This extended both the tensor artificial viscosity formulation and the artificial heat conduction formulation to the general relativistic regime. This method shows better results for collapse calculations than the standard scalar artificial viscosity. Numerical collapse calculations were also examined with respect to the number of zones used in the model. These calculations suggest that the number of zones used in current supernova calculations may be insufficient, and that the more sophisticated artificial viscosity methods used may be useful in future core collapse investigations. The second effect studied by this thesis is the impact of phase transitions in dense matter on the results of core collapse in Type 2 supernovae. Two different phase transitions were investigated. The QCD phase transition embodies the prediction of quantum chromodynamics that at high density the constituents of baryonic matter will be free quarks and gluons. The effects on the shock wave formed by core collapse and bounce is studied for various phase transitions. We find that some of the phase transitions modeled significantly increase the shock strength. The second phase transition we study is one from a normal hadronic gas to Q matter. Q matter is a phase of dense baryonic matter that is motivated by soliton models for the nucleus. It has been used to model zero temperature dense matter in static stellar objects, here we extend it to finite temperature, determine the phase transitions with hadronic matter

  18. Phase transitions via selective elemental vacancy engineering in complex oxide thin films

    PubMed Central

    Lee, Sang A.; Jeong, Hoidong; Woo, Sungmin; Hwang, Jae-Yeol; Choi, Si-Young; Kim, Sung-Dae; Choi, Minseok; Roh, Seulki; Yu, Hosung; Hwang, Jungseek; Kim, Sung Wng; Choi, Woo Seok

    2016-01-01

    Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling O vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structures of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and O vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, O vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films. PMID:27033718

  19. Characterization of polycrystalline VO2 thin film with low phase transition temperature fabricated by high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Tiegui; Wang, Langping; Wang, Xiaofeng; Zhang, Yufen

    2016-04-01

    VO2 is a unique material that undergoes a reversible phase transformation around 68∘C. Currently, applications of VO2 on smart windows are limited by its high transition temperature. In order to reduce the temperature, VO2 thin film was fabricated on quartz glass substrate by high power impulse magnetron sputtering with a modulated pulsed power. The phase transition temperature has been reduced to as low as 32∘C. In addition, the VO2 film possesses a typical metal-insulator transition. X-ray diffraction and selected area electron diffraction patterns reveal that an obvious lattice distortion has been formed in the as-deposited polycrystalline VO2 thin film. X-ray photoelectron spectroscopy proves that oxygen vacancies have been formed in the as-deposited thin film, which will induce a lattice distortion in the VO2 thin film.

  20. Structural phase transition and phonon instability in Cu12Sb4S13

    NASA Astrophysics Data System (ADS)

    May, A. F.; Delaire, O.; Niedziela, J. L.; Lara-Curzio, E.; Susner, M. A.; Abernathy, D. L.; Kirkham, M.; McGuire, M. A.

    2016-02-01

    A structural phase transition has been discovered in the synthetic tetrahedrite Cu12Sb4S13 at approximately 88 K. Upon cooling, the material transforms from its known cubic symmetry to a tetragonal unit cell that is characterized by an in-plane ordering that leads to a doubling of the unit cell volume. Specific heat capacity measurements demonstrate a hysteresis of more than two degrees in the associated anomaly. A similar hysteresis was observed in powder x-ray diffraction measurements, which also indicate a coexistence of the two phases, and together these results suggest a first-order transition. This structural transition coincides with a recently-reported metal-insulator transition, and the structural instability is related to the very low thermal conductivity κ in these materials. Inelastic neutron scattering was used to measure the phonon density of states in Cu12Sb4S13 and Cu10Zn2Sb4S13 , both of which possess a localized, low-energy phonon mode associated with strongly anharmonic copper displacements that suppress κ . In Cu12Sb4S13 , signatures of the phase transition are observed in the temperature dependence of the localized mode, which disappears at the structural transition. In contrast, in the cubic Zn-doped material, the mode is at slightly higher-energy but observable for all temperatures, though it softens upon cooling.

  1. Structural phase transition and phonon instability in Cu12Sb4S13

    DOE PAGESBeta

    May, Andrew F.; Delaire, Olivier A.; Niedziela, Jennifer L.; Lara-Curzio, Edgar; Susner, Michael A.; Abernathy, Douglas L.; Kirkham, Melanie J.; McGuire, Michael A.

    2016-02-08

    In this study, a structural phase transition has been discovered in the synthetic tetrahedrite Cu12Sb4S13 at approximately 88 K. Upon cooling, the material transforms from its known cubic symmetry to a tetragonal unit cell that is characterized by an in-plane ordering that leads to a doubling of the unit cell volume. Specific heat capacity measurements demonstrate a hysteresis of more than two degrees in the associated anomaly. A similar hysteresis was observed in powder x-ray diffraction measurements, which also indicate a coexistence of the two phases, and together these results suggest a first-order transition. This structural transition coincides with amore » recently-reported metal-insulator transition, and the structural instability is related to the very low thermal conductivity κ in these materials. Inelastic neutron scattering was used to measure the phonon density of states in Cu12Sb4S13 and Cu10Zn2Sb4S13, both of which possess a localized, low-energy phonon mode associated with strongly anharmonic copper displacements that suppress κ. In Cu12Sb4S13, signatures of the phase transition are observed in the temperature dependence of the localized mode, which disappears at the structural transition. In contrast, in the cubic Zn-doped material, the mode is at slightly higher-energy but observable for all temperatures, though it softens upon cooling.« less

  2. Griffiths singularity of quantum phase transition in ion-gated ZrNCl

    NASA Astrophysics Data System (ADS)

    Saito, Yu; Nojima, Tsutomu; Iwasa, Yoshihiro

    Recent technological advances of thin films fabrication, especially mechanical exfoliation, led to discoveries of less-disordered highly-crystalline two-dimensional (2D) superconductors; atomically thin NbSe2 and ion-gated 2D materials, which show intrinsic properties of 2D superconductors with minimal disorder; for example, metallic ground state, and unconventional 2D Ising superconductivity due to pure spin-valley locking effect. In this talk, we focus on magnetotransport properties of an ionic-liquid gated ZrNCl, which exhibited Griffiths singularity-like behavior in superconductor-metal-insulator transition induced by magnetic fields at low carrier concentrations. The overall behavior is quite similar to the recent results of superconducting Ga thin films, in which quantum Griffiths singularity was observed in vortex-glass state. We will discuss the relationship between Griffiths singularity and quantum tunneling or flux flow of vortices phase (vortex liquid) in our system

  3. Phase transitions in nuclear matter

    SciTech Connect

    Glendenning, N.K.

    1984-11-01

    The rather general circumstances under which a phase transition in hadronic matter at finite temperature to an abnormal phase in which baryon effective masses become small and in which copious baryon-antibaryon pairs appear is emphasized. A preview is also given of a soliton model of dense matter, in which at a density of about seven times nuclear density, matter ceases to be a color insulator and becomes increasingly color conducting. 22 references.

  4. Growth and phase transition characteristics of pure M-phase VO{sub 2} epitaxial film prepared by oxide molecular beam epitaxy

    SciTech Connect

    Fan, L. L.; Chen, S.; Wu, Y. F.; Chen, F. H.; Chu, W. S.; Chen, X.; Zou, C. W.; Wu, Z. Y.

    2013-09-23

    VO{sub 2} epitaxial film with large size has been prepared by oxide-molecular beam epitaxy method on Al{sub 2}O{sub 3} (0001) substrate. The VO{sub 2} film shows a perfect crystal orientation, uniformity, and distinct metal-insulator phase transition (MIT) characteristics. It is observed that the MIT character is closely associated with the crystal defects such as oxygen vacancies. By controlling the growth condition, the MIT temperature can be tuned through modifying the content of oxygen vacancies. The role of the oxygen vacancies on the phase transition behavior of this VO{sub 2} film is discussed in the framework of the hybridization theory and the valence state of vanadium.

  5. Abrupt Depletion Layer Approximation for the Metal Insulator Semiconductor Diode.

    ERIC Educational Resources Information Center

    Jones, Kenneth

    1979-01-01

    Determines the excess surface change carrier density, surface potential, and relative capacitance of a metal insulator semiconductor diode as a function of the gate voltage, using the precise questions and the equations derived with the abrupt depletion layer approximation. (Author/GA)

  6. Pressure-Induced Mott Transition Followed by a 24-K Superconducting Phase in BaFe2S3

    NASA Astrophysics Data System (ADS)

    Yamauchi, Touru; Hirata, Yasuyuki; Ueda, Yutaka; Ohgushi, Kenya

    2015-12-01

    We performed high-pressure study for a Mott insulator BaFe2S3 , by measuring dc resistivity and ac susceptibility up to 15 GPa. We found that the antiferromagnetic insulating state at the ambient pressure is transformed into a metallic state at the critical pressure, Pc=10 GPa , and the superconductivity with the optimum Tc=24 K emerges above Pc. Furthermore, we found that the metal-insulator transition (Mott transition) boundary terminates at a critical point around 10 GPa and 75 K. The obtained pressure-temperature (P -T ) phase diagram is similar to those of the organic and fullerene compounds; namely, BaFe2S3 is the first inorganic superconductor in the vicinity of bandwidth control type Mott transition.

  7. Phase transition transistors based on strongly-correlated materials

    NASA Astrophysics Data System (ADS)

    Nakano, Masaki

    2013-03-01

    The field-effect transistor (FET) provides electrical switching functions through linear control of the number of charges at a channel surface by external voltage. Controlling electronic phases of condensed matters in a FET geometry has long been a central issue of physical science. In particular, FET based on a strongly correlated material, namely ``Mott transistor,'' has attracted considerable interest, because it potentially provides gigantic and diverse electronic responses due to a strong interplay between charge, spin, orbital and lattice. We have investigated electric-field effects on such materials aiming at novel physical phenomena and electronic functions originating from strong correlation effects. Here we demonstrate electrical switching of bulk state of matter over the first-order metal-insulator transition. We fabricated FETs based on VO2 with use of a recently developed electric-double-layer transistor technique, and found that the electrostatically induced carriers at a channel surface drive all preexisting localized carriers of 1022 cm-3 even inside a bulk to motion, leading to bulk carrier delocalization beyond the electrostatic screening length. This non-local switching of bulk phases is achieved with just around 1 V, and moreover, a novel non-volatile memory like character emerges in a voltage-sweep measurement. These observations are apparently distinct from those of conventional FETs based on band insulators, capturing the essential feature of collective interactions in strongly correlated materials. This work was done in collaboration with K. Shibuya, D. Okuyama, T. Hatano, S. Ono, M. Kawasaki, Y. Iwasa, and Y. Tokura. This work was supported by the Japan Society for the Promotion of Science (JSAP) through its ``Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program).''

  8. Influence of lattice distortion on phase transition properties of polycrystalline VO2 thin film

    NASA Astrophysics Data System (ADS)

    Lin, Tiegui; Wang, Langping; Wang, Xiaofeng; Zhang, Yufen; Yu, Yonghao

    2016-08-01

    In this work, high power impulse magnetron sputtering was used to control the lattice distortion in polycrystalline VO2 thin film. SEM images revealed that all the VO2 thin films had crystallite sizes of below 20 nm, and similar configurations. UV-vis-near IR transmittance spectra measured at different temperatures showed that most of the as-deposited films had a typical metal-insulator transition. Four-point probe resistivity results showed that the transition temperature of the films varied from 54.5 to 32 °C. The X-ray diffraction (XRD) patterns of the as-deposited films revealed that most were polycrystalline monoclinic VO2. The XRD results also confirmed that the lattice distortions in the as-deposited films were different, and the transition temperature decreased with the difference between the interplanar spacing of the as-deposited thin film and standard rutile VO2. Furthermore, a room temperature rutile VO2 thin film was successfully synthesized when this difference was small enough. Additionally, XRD patterns measured at varied temperatures revealed that the phase transition process of the polycrystalline VO2 thin film was a coordinative deformation between grains with different orientations. The main structural change during the phase transition was a gradual shift in interplanar spacing with temperature.

  9. Effect of pressure and magnetic field on the phase transitions in lanthanum-deficient manganites

    NASA Astrophysics Data System (ADS)

    Dyakonov, V. P.; Fita, I.; Zubov, E.; Pashchenko, V.; Mikhaylov, V.; Bukhantsev, Yu.; Szymczak, Henryk

    2001-08-01

    We report on the pressure, field and temperature dependencies of magnetization and resistance in manganites of (La1-xCax)1-yMn1+y O3 type. The M(T) dependencies is established to exhibit the following peculiarities: the first is connected with the paramagnet (PM)-ferromagnet (FM) transition at 267 K; the peak of M(T) dependence eat 263K is presumable due to an existence of AFM clusters; an anomaly in magnetization is connected with the FM-canted phase transition at 42K and the large irreversibility in the field-cooled and zero field- cooled magnetization. As field is increased above 200 Oe, the sign of the M(T) anomaly changes, namely, the M(T) magnetization increases with increasing field at 42K. The character of M(T) dependencies does not change under pressure. However, both the Curie temperature, Tc, and the resistance peak corresponding to metal-insulator transition shift in the direction of high temperatures with increasing pressure. A pressure stabilizes the ferromagnetic metallic phase. The temperature of the FM-canting phase transition does not change under pressure. The magneto resistance effect increase by 15 percent under pressure of 12.6 kbar.

  10. Electron-phonon coupling and structural phase transitions in early transition metal oxides and chalcogenides

    NASA Astrophysics Data System (ADS)

    Farley, Katie Elizabeth

    promising catalyst for electrocatalytic water splitting and can catalyze the hydrogen evolution reaction that is utilized within photoelectrochemical cells. Chapters 4 and 5 delve into the synthesis and doping of VO2, which undergoes a metal to insulator transition. Chapter 4 develops a detailed understanding of the influence of doping on the MIT and reports the activation energies of the monoclinic→rutile (insulator→metal) and rutile→monoclinic (metal?insulator) transitions. The dynamical effects of doping on hysteresis are considered for both Mo- and W-doped VO2. Chapter 5 reports the development of synthetic route to produce optical grade VO2 with considerable size control. Smart window applications for this material require small particle sizes in order to reduce visible light scattering. This chapter systematically explores hydrothermal syntheses for the preparation of VO2 and allows for development of mechanistic postulates for obtaining size control.

  11. Carrier tuning the metal-insulator transition of epitaxial La0.67Sr0.33MnO3 thin film on Nb doped SrTiO3 substrate

    NASA Astrophysics Data System (ADS)

    Zhan, J. M.; Li, P. G.; Liu, H.; Tao, S. L.; Ma, H.; Shen, J. Q.; Pan, M. J.; Zhang, Z. J.; Wang, S. L.; Yuan, G. L.

    2016-04-01

    La0.67Sr0.33MnO3 (LSMO) thin films were deposited on (001)SrTiO3(STO) and n-type doped Nb:SrTiO3(NSTO) single crystal substrates respectively. The metal to insulator transition temperature(TMI) of LSMO film on NSTO is lower than that on STO, and the TMI of LSMO can be tuned by changing the applied current in the LSMO/NSTO p-n junction. Such behaviors were considered to be related to the carrier concentration redistribution in LSMO film caused by the change of depletion layer thickness in p-n junction which depends greatly on the applied electric field. The phenomenon could be used to configure artificial devices and exploring the underlying physics.

  12. Thickness dependent metal-insulator transition and dimensional crossover for weak localization in Si{sub 0.02}Zn{sub 0.98}O thin films grown by pulsed laser deposition

    SciTech Connect

    Das, Amit K. Ajimsha, R. S.; Kukreja, L. M.

    2014-05-21

    Metal to insulator transition was observed in Si{sub 0.02}Zn{sub 0.98}O (SZO) films, grown by pulsed laser deposition on sapphire substrates, as the thicknesses of the films were reduced from ∼40 to 15 nm. The SZO film with thickness of ∼40 nm showed typical metallic behavior in temperature dependent resistivity measurements. On the contrary, the SZO film with thickness of ∼15 nm was found to exhibit strong localization where the transport at low temperature was dominated by variable range hopping conduction. In the intermediate thickness regime, quantum corrections were important and a dimensional crossover from 3D to 2D weak localization occurred in the SZO film with thickness of 20 nm.

  13. Sliding Over a Phase Transition

    NASA Astrophysics Data System (ADS)

    Tosatti, Erio; Benassi, Andrea; Vanossi, Andrea; Santoro, Giuseppe E.

    2011-03-01

    The frictional response experienced by a stick-slip slider when a phase transition occurs in the underlying solid substrate is a potentially exciting, poorly explored problem. We show, based on 2-dimensional simulations modeling the sliding of a nanotip, that indeed friction may be heavily affected by a continuous structural transition. First, friction turns nonmonotonic as temperature crosses the transition, peaking at the critical temperature Tc where fluctuations are strongest. Second, below Tc friction depends upon order parameter directions, and is much larger for those where the frictional slip can cause a local flip. This may open a route towards control of atomic scale friction by switching the order parameter direction by an external field or strain, with possible application to e.g., displacive ferroelectrics such as BaTi O3 , as well as ferro- and antiferro-distortive materials. Supported by project ESF FANAS/AFRI sponsored by the Italian Research Council (CNR).

  14. A simple metal-insulator criterion for the doped Mott-Hubbard materials

    NASA Astrophysics Data System (ADS)

    Gavrichkov, Vladimir A.

    2015-04-01

    A simple metal-insulator criterion for doped Mott-Hubbard materials has been derived. Its readings are closely related to the orbital and spin nature of the ground states of the unit cell. The available criterion readings (metal or insulator) in the paramagnetic phase reveal the possibility of the insulator state of doped materials with the forbidden first removal electron states. According to its physical meaning, the result is similar to the Wilson's criterion in itinerant electron systems. The application of the criterion to high-Tc cuprates is discussed.

  15. Non-equilibrium phase transitions

    SciTech Connect

    Mottola, E.; Cooper, F.M.; Bishop, A.R.; Habib, S.; Kluger, Y.; Jensen, N.G.

    1998-12-31

    This is the final report of a one-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). Non-equilibrium phase transitions play a central role in a very broad range of scientific areas, ranging from nuclear, particle, and astrophysics to condensed matter physics and the material and biological sciences. The aim of this project was to explore the path to a deeper and more fundamental understanding of the common physical principles underlying the complex real time dynamics of phase transitions. The main emphasis was on the development of general theoretical tools to deal with non-equilibrium processes, and of numerical methods robust enough to capture the time-evolving structures that occur in actual experimental situations. Specific applications to Laboratory multidivisional efforts in relativistic heavy-ion physics (transition to a new phase of nuclear matter consisting of a quark-gluon plasma) and layered high-temperature superconductors (critical currents and flux flow at the National High Magnetic Field Laboratory) were undertaken.

  16. Phase Transitions in Dipalmitoylphosphatidylcholine Monolayers.

    PubMed

    Zuo, Yi Y; Chen, Rimei; Wang, Xianju; Yang, Jinlong; Policova, Zdenka; Neumann, A Wilhelm

    2016-08-23

    A self-assembled phospholipid monolayer at an air-water interface is a well-defined model system for studying surface thermodynamics, membrane biophysics, thin-film materials, and colloidal soft matter. Here we report a study of two-dimensional phase transitions in the dipalmitoylphosphatidylcholine (DPPC) monolayer at the air-water interface using a newly developed methodology called constrained drop surfactometry (CDS). CDS is superior to the classical Langmuir balance in its capacity for rigorous temperature control and leak-proof environments, thus making it an ideal alternative to the Langmuir balance for studying lipid polymorphism. In addition, we have developed a novel Langmuir-Blodgett (LB) transfer technique that allows the direct transfer of lipid monolayers from the droplet surface under well-controlled conditions. This LB transfer technique permits the direct visualization of phase coexistence in the DPPC monolayer. With these technological advances, we found that the two-dimensional phase behavior of the DPPC monolayer is analogous to the three-dimensional phase transition of a pure substance. This study has implications in the fundamental understanding of surface thermodynamics as well as applications such as self-assembled monolayers and pulmonary surfactant biophysics. PMID:27479299

  17. Spin-orbit tuned metal-insulator transitions in single-crystal Sr₂Ir1–xRhxO₄ (0≤x≤1)

    SciTech Connect

    Qi, T. F.; Korneta, O. B.; Li, L.; Butrouna, K.; Cao, V. S.; Wan, Xiangang; Schlottmann, P.; Kaul, R. K.; Cao, G.

    2012-09-06

    Sr₂IrO₄ is a magnetic insulator driven by spin-orbit interaction (SOI) whereas the isoelectronic and isostructural Sr₂RhO₄ is a paramagnetic metal. The contrasting ground states have been shown to result from the critical role of the strong SOI in the iridate. Our investigation of structural, transport, magnetic, and thermal properties reveals that substituting 4d Rh⁴⁺ (4d⁵) ions for 5d Ir⁴⁺ (5d⁵) ions in Sr₂IrO₄ directly reduces the SOI and rebalances the competing energies so profoundly that it generates a rich phase diagram for Sr₂Ir1–xRhxO₄ featuring two major effects: (1) Light Rh doping (0 ≤ x ≤ 0.16) prompts a simultaneous and precipitous drop in both the electrical resistivity and the magnetic ordering temperature TC, which is suppressed to zero at x = 0.16 from 240 K at x = 0. (2) However, with heavier Rh doping [0.24 < x < 0.85 (±0.05)] disorder scattering leads to localized states and a return to an insulating state with spin frustration and exotic magnetic behavior that only disappears near x = 1. The intricacy of Sr₂Ir1–xRhxO₄ is further highlighted by comparison with Sr₂Ir1–xRuxO₄ where Ru⁴⁺ (4d⁴) drives a direct crossover from the insulating to metallic states.

  18. Phase transition thermodynamics of bisphenols.

    PubMed

    Costa, José C S; Dávalos, Juan Z; Santos, Luís M N B F

    2014-10-16

    Herein we have studied, presented, and analyzed the phase equilibria thermodynamics of a bisphenols (BP-A, BP-E, BP-F, BP-AP, and BP-S) series. In particular, the heat capacities, melting temperatures, and vapor pressures at different temperatures as well as the standard enthalpies, entropies, and Gibbs energies of phase transition (fusion and sublimation) were experimentally determined. Also, we have presented the phase diagrams of each bisphenol derivative and investigated the key parameters related to the thermodynamic stability of the condensed phases. When all the bisphenol derivatives are compared at the same conditions, solids BP-AP and BP-S present lower volatilities (higher Gibbs energy of sublimation) and high melting temperatures due to the higher stability of their solid phases. Solids BP-A and BP-F present similar stabilities, whereas BP-E is more volatile. The introduction of -CH3 groups in BP-F (giving BP-E and BP-A) leads an entropic differentiation in the solid phase, whereas in the isotropic liquids the enthalpic and entropic differentiations are negligible.

  19. Thermal and Magnetic Measurements at Phase Transitions in NiS_2-xSe_x

    NASA Astrophysics Data System (ADS)

    Kuo, Y.-K.; Powell, D. K.; Brill, J. W.; Yao, X.; Honig, J. M.

    1996-03-01

    We have measured the specific heat and magnetic susceptibility of single crystals of the pyrites, NiS_2-xSe_x,(H. Takano and A. Okiji, Jnl. Phys. Soc. Jpn. \\underline50), 3835 (1981) .^,(X. Yao, T. Hogan, C. Kannewurf, and J.M. Honig, to be published in Phys. Rev. B.) with x=0.38, 0.44, 0.51, 0.55, and 0.58. Anomalies in both properties were observed for all samples at the (``A-P'') antiferromagnetic-paramagnetic transitions; T_A-P increases from 35 K to 92 K with x. The (``WF-A'') weak (canted) ferromagnetic-antiferromagnetic transition (T_WF-A < 25 K) observed in susceptibility (for all stoichiometries) was only observed for some samples in the specific heat. All transitions appear second order, with molar entropies much less than R, suggesting that the magnetic moments are small even in the antiferromagnetic phases. Comparison with recent resistance measurements^2 show that T_A-P is also a metal-insulator boundary for x>0.5, while the low temperature WF-A phase boundary extends above x=0.5 into the metallic phase. *Supported in part by NSF Grants DMR-9222986, EHR-9108764 and DMR-9300507.

  20. Mott metal-insulator transition on compressible lattices.

    PubMed

    Zacharias, Mario; Bartosch, Lorenz; Garst, Markus

    2012-10-26

    The critical properties of the finite temperature Mott end point are drastically altered by a coupling to crystal elasticity, i.e., whenever it is amenable to pressure tuning. Similar as for critical piezoelectric ferroelectrics, the Ising criticality of the electronic system is preempted by an isostructural instability, and long-range shear forces suppress microscopic fluctuations. As a result, the end point is governed by Landau criticality. Its hallmark is, thus, a breakdown of Hooke's law of elasticity with a nonlinear strain-stress relation characterized by a mean-field exponent. Based on a quantitative estimate, we predict critical elasticity to dominate the temperature range ΔT*/T(c)≃8%, close to the Mott end point of κ-(BEDT-TTF)(2)X. PMID:23215206

  1. Work and quantum phase transitions: quantum latency.

    PubMed

    Mascarenhas, E; Bragança, H; Dorner, R; França Santos, M; Vedral, V; Modi, K; Goold, J

    2014-06-01

    We study the physics of quantum phase transitions from the perspective of nonequilibrium thermodynamics. For first-order quantum phase transitions, we find that the average work done per quench in crossing the critical point is discontinuous. This leads us to introduce the quantum latent work in analogy with the classical latent heat of first order classical phase transitions. For second order quantum phase transitions the irreversible work is closely related to the fidelity susceptibility for weak sudden quenches of the system Hamiltonian. We demonstrate our ideas with numerical simulations of first, second, and infinite order phase transitions in various spin chain models.

  2. Gate-tunable phase transitions in thin flakes of 1T-TaS2

    NASA Astrophysics Data System (ADS)

    Yu, Yijun; Yang, Fangyuan; Lu, Xiu Fang; Yan, Ya Jun; Cho, Yong-Heum; Ma, Liguo; Niu, Xiaohai; Kim, Sejoong; Son, Young-Woo; Feng, Donglai; Li, Shiyan; Cheong, Sang-Wook; Chen, Xian Hui; Zhang, Yuanbo

    2015-03-01

    The ability to tune material properties using gating by electric fields is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as the observation of gate electric-field-induced superconductivity and metal-insulator transitions. Here, we describe an ionic field-effect transistor (termed an iFET), in which gate-controlled Li ion intercalation modulates the material properties of layered crystals of 1T-TaS2. The strong charge doping induced by the tunable ion intercalation alters the energetics of various charge-ordered states in 1T-TaS2 and produces a series of phase transitions in thin-flake samples with reduced dimensionality. We find that the charge-density wave states in 1T-TaS2 collapse in the two-dimensional limit at critical thicknesses. Meanwhile, at low temperatures, the ionic gating induces multiple phase transitions from Mott-insulator to metal in 1T-TaS2 thin flakes, with five orders of magnitude modulation in resistance, and superconductivity emerges in a textured charge-density wave state induced by ionic gating. Our method of gate-controlled intercalation opens up possibilities in searching for novel states of matter in the extreme charge-carrier-concentration limit.

  3. Gate-tunable phase transitions in thin flakes of 1T-TaS2.

    PubMed

    Yu, Yijun; Yang, Fangyuan; Lu, Xiu Fang; Yan, Ya Jun; Cho, Yong-Heum; Ma, Liguo; Niu, Xiaohai; Kim, Sejoong; Son, Young-Woo; Feng, Donglai; Li, Shiyan; Cheong, Sang-Wook; Chen, Xian Hui; Zhang, Yuanbo

    2015-03-01

    The ability to tune material properties using gating by electric fields is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as the observation of gate electric-field-induced superconductivity and metal-insulator transitions. Here, we describe an ionic field-effect transistor (termed an iFET), in which gate-controlled Li ion intercalation modulates the material properties of layered crystals of 1T-TaS2. The strong charge doping induced by the tunable ion intercalation alters the energetics of various charge-ordered states in 1T-TaS2 and produces a series of phase transitions in thin-flake samples with reduced dimensionality. We find that the charge-density wave states in 1T-TaS2 collapse in the two-dimensional limit at critical thicknesses. Meanwhile, at low temperatures, the ionic gating induces multiple phase transitions from Mott-insulator to metal in 1T-TaS2 thin flakes, with five orders of magnitude modulation in resistance, and superconductivity emerges in a textured charge-density wave state induced by ionic gating. Our method of gate-controlled intercalation opens up possibilities in searching for novel states of matter in the extreme charge-carrier-concentration limit.

  4. Low-voltage current noise in long quantum superconductor/insulator/normal-metal/insulator/superconductor junctions.

    SciTech Connect

    Kopnin, N. B.; Galperin, Y. M.; Vinokur, V.; Materials Science Division; Helsinki Univ. Tech.; L.D. Landau Inst. for Theoretical Physics; Univ. Oslo; A.F. Ioffe Physico-Tech. Inst. of Russian Academy of Sciences

    2007-01-01

    The current noise in long superconductor/insulator/normal-metal/insulator/superconductor junctions at low temperatures is sensitive to the population of the subgap states, which is far from equilibrium even at low bias voltages. A nonequilibrium distribution is established due to an interplay between voltage-driven interlevel Landau-Zener transitions and intralevel inelastic relaxation. The Fano factor (the ratio of the zero-frequency noise to the dc current) is enhanced drastically, being proportional to the number of times which a particle flies along the Andreev trajectory before it escapes from the level due to inelastic scattering. For weak Landau-Zener transitions, the enhancement is even larger due to a smaller dc current.

  5. Nonequilibrium dynamics of phase transitions

    NASA Astrophysics Data System (ADS)

    Gagne, Carmen Jeanne

    2001-11-01

    Phase transitions occur in such diverse and important systems as ferromagnets, liquid crystals and the early Universe. The dynamics of phase transitions such as these have been studied for decades, but the analytical models still need a great deal of improvement before they can adequately describe all time stages and regions under the coexistence curve. Numerical studies can supplement these analytical theories, but they need to accurately describe the continuum equations that they are intended to solve. This thesis describes a method for removing the lattice- spacing and renormalization-mass dependence of Langevin simulations of phase mixing in (2 + 1)-dimensional asymmetric Ginzburg-Landau models with short-ranged interactions. Also, the spread in the order parameter near the critical value of the control parameter due to critical slowing down is used to more accurately determine this value of the control parameter in these simulations. In addition, a new method is proposed for quantifying the departure from equilibrium. The method explores the behavior of the rate of change of the momentum-integrated structure function, ΔStot( t), as it evolves in time. As an illustration, we examine a (1 + 1)-dimensional model of a stochastic Ginzburg-Landau model at varying cooling rates. We show that ΔStot(t) displays a peak which scales with cooling time-scale as t1/2q in the over-damped limit and t1/3q in the underdamped limit. The peak amplitude was found to scale with cooling time-scale as t6/5q in all viscosities studied.

  6. QCD Phase Transitions, Volume 15

    SciTech Connect

    Schaefer, T.; Shuryak, E.

    1999-03-20

    The title of the workshop, ''The QCD Phase Transitions'', in fact happened to be too narrow for its real contents. It would be more accurate to say that it was devoted to different phases of QCD and QCD-related gauge theories, with strong emphasis on discussion of the underlying non-perturbative mechanisms which manifest themselves as all those phases. Before we go to specifics, let us emphasize one important aspect of the present status of non-perturbative Quantum Field Theory in general. It remains true that its studies do not get attention proportional to the intellectual challenge they deserve, and that the theorists working on it remain very fragmented. The efforts to create Theory of Everything including Quantum Gravity have attracted the lion share of attention and young talent. Nevertheless, in the last few years there was also a tremendous progress and even some shift of attention toward emphasis on the unity of non-perturbative phenomena. For example, we have seen some efforts to connect the lessons from recent progress in Supersymmetric theories with that in QCD, as derived from phenomenology and lattice. Another example is Maldacena conjecture and related development, which connect three things together, string theory, super-gravity and the (N=4) supersymmetric gauge theory. Although the progress mentioned is remarkable by itself, if we would listen to each other more we may have chance to strengthen the field and reach better understanding of the spectacular non-perturbative physics.

  7. Phase transitions for the Brusselator model

    NASA Astrophysics Data System (ADS)

    Ma, Tian; Wang, Shouhong

    2011-03-01

    Dynamic phase transitions of the Brusselator model is carefully analyzed, leading to a rigorous characterization of the types and structure of the phase transitions of the model from basic homogeneous states. The study is based on the dynamic transition theory developed recently by the authors.

  8. On the structure of supercritical phase transition

    SciTech Connect

    Hirata, Y.S. )

    1990-06-10

    A novel physical picture is presented for the normal-to-supercritical phase transition in QED around a large-Z nucleus. The process is described as the decay of the false vacuum in close analogy to the first-order phase transition in statistical mechanics. The irreversible nature of the transition is pointed out and the physical implications of this picture are discussed.

  9. Cloud regimes as phase transitions

    NASA Astrophysics Data System (ADS)

    Stechmann, Samuel N.; Hottovy, Scott

    2016-06-01

    Clouds are repeatedly identified as a leading source of uncertainty in future climate predictions. Of particular importance are stratocumulus clouds, which can appear as either (i) closed cells that reflect solar radiation back to space or (ii) open cells that allow solar radiation to reach the Earth's surface. Here we show that these clouds regimes -- open versus closed cells -- fit the paradigm of a phase transition. In addition, this paradigm characterizes pockets of open cells as the interface between the open- and closed-cell regimes, and it identifies shallow cumulus clouds as a regime of higher variability. This behavior can be understood using an idealized model for the dynamics of atmospheric water as a stochastic diffusion process. With this new conceptual viewpoint, ideas from statistical mechanics could potentially be used for understanding uncertainties related to clouds in the climate system and climate predictions.

  10. Enhanced rectifying response from metal-insulator-insulator-metal junctions

    NASA Astrophysics Data System (ADS)

    Maraghechi, P.; Foroughi-Abari, A.; Cadien, K.; Elezzabi, A. Y.

    2011-12-01

    We present on a metal-insulator-insulator-metal quantum electronic tunneling devices suitable for high speed rectifiers. Through the introduction of double oxide layer between similar metallic electrodes, a cascaded potential barrier is formed which alters the electron tunneling mechanism at forward versus the reverse bias. The cascaded potential barrier engineering manifests itself in both a highly nonlinear and asymmetric I-V junction characteristic. It is envisioned that high speed rectifiers and mixers having extraordinary nonlinearity can be realized through the incorporation of the cascaded potential barrier architecture and dissimilar metallic electrodes.

  11. Surface polaritons of a metal-insulator-metal curved slab

    NASA Astrophysics Data System (ADS)

    Moradi, Afshin

    2016-09-01

    The properties of s- and p-polarized surface polariton modes propagating circumferentially around a portion of a cylindrical metal-insulator-metal structure are studied, theoretically. By using the Maxwell equations in conjunction with the Drude model for the dielectric function of the metals and applying the appropriate boundary conditions, the dispersion relations of surface waves for two types of modes, are derived and numerically solved. The effects of the slab curvature and insulator thickness on the propagation of electromagnetic modes are investigated. The differences of the s- and p-polarized surface modes are also shown.

  12. Superconducting tantalum nitride-based normal metal-insulator-superconductor tunnel junctions

    SciTech Connect

    Chaudhuri, S.; Maasilta, I. J.

    2014-03-24

    We report the development of superconducting tantalum nitride (TaN{sub x}) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO{sub x} and TaO{sub x} (Cu-AlO{sub x}-Al-TaN{sub x} and Cu-TaO{sub x}-TaN{sub x}), with both devices exhibiting temperature dependent current-voltage characteristics which follow the simple one-particle tunneling model. The superconducting gap follows a BCS type temperature dependence, rendering these devices suitable for sensitive thermometry and bolometry from the superconducting transition temperature T{sub C} of the TaN{sub x} film at ∼5 K down to ∼0.5 K. Numerical simulations were also performed to predict how junction parameters should be tuned to achieve electronic cooling at temperatures above 1 K.

  13. Mid-infrared intersubband polaritons in dispersive metal-insulator-metal resonators

    SciTech Connect

    Manceau, J.-M. Ongarello, T.; Colombelli, R.; Zanotto, S.; Sorba, L.; Tredicucci, A.; Biasiol, G.

    2014-08-25

    We demonstrate room-temperature strong coupling between a mid-infrared (λ = 9.9 μm) intersubband transition and the fundamental cavity mode of a metal-insulator-metal resonator. Patterning of the resonator surface enables surface-coupling of the radiation and introduces an energy dispersion which can be probed with angle-resolved reflectivity. In particular, the polaritonic dispersion presents an accessible energy minimum at k = 0 where—potentially—polaritons can accumulate. We also show that it is possible to maximize the coupling of photons into the polaritonic states and—simultaneously—to engineer the position of the minimum Rabi splitting at a desired value of the in-plane wavevector. This can be precisely accomplished via a simple post-processing technique. The results are confirmed using the temporal coupled mode theory formalism and their significance in the context of the strong critical coupling concept is highlighted.

  14. Metal-insulator quantum critical point beneath the high Tc superconducting dome

    PubMed Central

    Sebastian, Suchitra E.; Harrison, N.; Altarawneh, M. M.; Mielke, C. H.; Liang, Ruixing; Bonn, D. A.; Lonzarich, G. G.; Hardy, W. N.

    2010-01-01

    An enduring question in correlated systems concerns whether superconductivity is favored at a quantum critical point (QCP) characterized by a divergent quasiparticle effective mass. Despite such a scenario being widely postulated in high Tc cuprates and invoked to explain non-Fermi liquid transport signatures, experimental evidence is lacking for a critical divergence under the superconducting dome. We use ultrastrong magnetic fields to measure quantum oscillations in underdoped YBa2Cu3O6+x, revealing a dramatic doping-dependent upturn in quasiparticle effective mass at a critical metal-insulator transition beneath the superconducting dome. Given the location of this QCP under a plateau in Tc in addition to a postulated QCP at optimal doping, we discuss the intriguing possibility of two intersecting superconducting subdomes, each centered at a critical Fermi surface instability. PMID:20304800

  15. Phase transitions in physiologic coupling

    PubMed Central

    Bartsch, Ronny P.; Schumann, Aicko Y.; Kantelhardt, Jan W.; Penzel, Thomas; Ivanov, Plamen Ch.

    2012-01-01

    Integrated physiological systems, such as the cardiac and the respiratory system, exhibit complex dynamics that are further influenced by intrinsic feedback mechanisms controlling their interaction. To probe how the cardiac and the respiratory system adjust their rhythms, despite continuous fluctuations in their dynamics, we study the phase synchronization of heartbeat intervals and respiratory cycles. The nature of this interaction, its physiological and clinical relevance, and its relation to mechanisms of neural control is not well understood. We investigate whether and how cardiorespiratory phase synchronization (CRPS) responds to changes in physiological states and conditions. We find that the degree of CRPS in healthy subjects dramatically changes with sleep-stage transitions and exhibits a pronounced stratification pattern with a 400% increase from rapid eye movement sleep and wake, to light and deep sleep, indicating that sympatho-vagal balance strongly influences CRPS. For elderly subjects, we find that the overall degree of CRPS is reduced by approximately 40%, which has important clinical implications. However, the sleep-stage stratification pattern we uncover in CRPS does not break down with advanced age, and surprisingly, remains stable across subjects. Our results show that the difference in CRPS between sleep stages exceeds the difference between young and elderly, suggesting that sleep regulation has a significantly stronger effect on cardiorespiratory coupling than healthy aging. We demonstrate that CRPS and the traditionally studied respiratory sinus arrhythmia represent different aspects of the cardiorespiratory interaction, and that key physiologic variables, related to regulatory mechanisms of the cardiac and respiratory systems, which influence respiratory sinus arrhythmia, do not affect CRPS. PMID:22691492

  16. Phase transitions in semidefinite relaxations

    PubMed Central

    Javanmard, Adel; Montanari, Andrea; Ricci-Tersenghi, Federico

    2016-01-01

    Statistical inference problems arising within signal processing, data mining, and machine learning naturally give rise to hard combinatorial optimization problems. These problems become intractable when the dimensionality of the data is large, as is often the case for modern datasets. A popular idea is to construct convex relaxations of these combinatorial problems, which can be solved efficiently for large-scale datasets. Semidefinite programming (SDP) relaxations are among the most powerful methods in this family and are surprisingly well suited for a broad range of problems where data take the form of matrices or graphs. It has been observed several times that when the statistical noise is small enough, SDP relaxations correctly detect the underlying combinatorial structures. In this paper we develop asymptotic predictions for several detection thresholds, as well as for the estimation error above these thresholds. We study some classical SDP relaxations for statistical problems motivated by graph synchronization and community detection in networks. We map these optimization problems to statistical mechanics models with vector spins and use nonrigorous techniques from statistical mechanics to characterize the corresponding phase transitions. Our results clarify the effectiveness of SDP relaxations in solving high-dimensional statistical problems. PMID:27001856

  17. Phase transitions in semidefinite relaxations.

    PubMed

    Javanmard, Adel; Montanari, Andrea; Ricci-Tersenghi, Federico

    2016-04-19

    Statistical inference problems arising within signal processing, data mining, and machine learning naturally give rise to hard combinatorial optimization problems. These problems become intractable when the dimensionality of the data is large, as is often the case for modern datasets. A popular idea is to construct convex relaxations of these combinatorial problems, which can be solved efficiently for large-scale datasets. Semidefinite programming (SDP) relaxations are among the most powerful methods in this family and are surprisingly well suited for a broad range of problems where data take the form of matrices or graphs. It has been observed several times that when the statistical noise is small enough, SDP relaxations correctly detect the underlying combinatorial structures. In this paper we develop asymptotic predictions for several detection thresholds, as well as for the estimation error above these thresholds. We study some classical SDP relaxations for statistical problems motivated by graph synchronization and community detection in networks. We map these optimization problems to statistical mechanics models with vector spins and use nonrigorous techniques from statistical mechanics to characterize the corresponding phase transitions. Our results clarify the effectiveness of SDP relaxations in solving high-dimensional statistical problems. PMID:27001856

  18. Analysis of Nuclear Quantum Phase Transitions

    SciTech Connect

    Li, Z. P.; Meng, J.; Niksic, T.; Vretenar, D.; Lalazissis, G. A.; Ring, P.

    2009-08-26

    A microscopic analysis, based on nuclear energy density functionals, is presented for shape phase transitions in Nd isotopes. Low-lying excitation spectra and transition probabilities are calculated starting from a five-dimensional Hamiltonian, with parameters determined by constrained relativistic mean-field calculations for triaxial shapes. The results reproduce available data, and show that there is an abrupt change of structure at N = 90, that corresponds to a first-order quantum phase transition between spherical and axially deformed shapes.

  19. Exploring structural phase transitions of ion crystals

    PubMed Central

    Yan, L. L.; Wan, W.; Chen, L.; Zhou, F.; Gong, S. J.; Tong, X.; Feng, M.

    2016-01-01

    Phase transitions have been a research focus in many-body physics over past decades. Cold ions, under strong Coulomb repulsion, provide a repealing paradigm of exploring phase transitions in stable confinement by electromagnetic field. We demonstrate various conformations of up to sixteen laser-cooled 40Ca+ ion crystals in a home-built surface-electrode trap, where besides the usually mentioned structural phase transition from the linear to the zigzag, two additional phase transitions to more complicated two-dimensional configurations are identified. The experimental observation agrees well with the numerical simulation. Heating due to micromotion of the ions is analysed by comparison of the numerical simulation with the experimental observation. Our investigation implies very rich and complicated many-body behaviour in the trapped-ion systems and provides effective mechanism for further exploring quantum phase transitions and quantum information processing with ultracold trapped ions. PMID:26865229

  20. Effects of crystal orientation on electronic band structure and anomalous shift of higher critical point in VO2 thin films during the phase transition process

    NASA Astrophysics Data System (ADS)

    Zhang, Peng; Huang, Ting; You, Qinghu; Zhang, Jinzhong; Li, Wenwu; Wu, Jiada; Hu, Zhigao; Chu, Junhao

    2015-12-01

    The phase transition behaviour of vanadium dioxide (VO2) with different thicknesses has been investigated by temperature-dependent optical transmittance and Raman spectra. It is found that the crystal orientation has a great effect on the metal-insulator transition (MIT) of VO2 films. The x-ray diffraction (XRD) analysis shows that the films are polycrystalline and exhibit the characteristics of the monoclinic phase. The preferential growth crystal orientation (0 2 0) is converted to the (\\bar{1} 1 1) plane with the film thickness increasing. It is believed that the (\\bar{1} 1 1) plane is the reflection of a twinned structure with (0 1 1) crystal orientation, which will lead to the arrangements of oxygen atoms and vanadium atoms deviating from the pure monoclinic structure. It is found that the highest order transition (E 3) is highly susceptible to the crystal orientation, whereas the lowest order transition (E 1) is nearly unaffected by it. The E 3 exhibits an anomalous temperature dependence with an abrupt blue-shift (˜0.5 eV) in the vicinity of the metal-insulator transition (MIT) for VO2 film with a thickness of 84 nm. The findings show that the empty {σ*} band can be driven close to the Fermi level when the (0 2 0) orientation is converted to the (\\bar{1} 1 1) orientation. Compared to the VO2 films with thicknesses of 39 and 57 nm, the E 3 decreases by 0.8 eV and the E 2 increases by about 0.1 eV at the insulator state for the VO2 film with a thickness of 84 nm. The abnormal electronic transition and the variation of energy band is likely caused by the lattice distortion and V-V dimerisation deviation from the monoclinic {{a}\\text{m}} axis.

  1. Microscopic Description of Nuclear Quantum Phase Transitions

    SciTech Connect

    Niksic, T.; Vretenar, D.; Lalazissis, G. A.; Ring, P.

    2007-08-31

    The relativistic mean-field framework, extended to include correlations related to restoration of broken symmetries and to fluctuations of the quadrupole deformation, is applied to a study of shape transitions in Nd isotopes. It is demonstrated that the microscopic self-consistent approach, based on global effective interactions, can describe not only general features of transitions between spherical and deformed nuclei, but also the singular properties of excitation spectra and transition rates at the critical point of quantum shape phase transition.

  2. Electronic structure of a metal-insulator interface

    NASA Astrophysics Data System (ADS)

    Bordier, G.; Noguera, C.

    1991-07-01

    We present an analytical study of the electronic structure of a metal-insulator interface with special emphasis on the metal induced gap states (MIGS). It includes three steps: (i) a tight-binding approach of the dispersion relation and Green's function of insulators of NaCl or ZnS structure; (ii) a matching with free electron-like wavefunctions at the NaCl(100) or ZnS(110) surfaces, which yields the density and penetration depth of the MIGS as a function of the ionocovalent characteristics of the insulator and of the metal Fermi level; (iii) a self-consistent determination of the Fermi level position in a Thomas-Fermi approximation. The Schottky barrier height is derived under a simple analytic form and its dependence upon the metal work function is found in good agreement with experimental results.

  3. Nanostructured Anodic Multilayer Dielectric Stacked Metal-Insulator-Metal Capacitors.

    PubMed

    Karthik, R; Kannadassan, D; Baghini, Maryam Shojaei; Mallick, P S

    2015-12-01

    This paper presents the fabrication of Al2O3/TiO2/Al2O3 metal-insulator-metal (MIM) capacitor using anodization technique. High capacitance density of > 3.5 fF/μm2, low quadratic voltage coefficient of capacitance of < 115 ppm/V2 and a low leakage current density of 4.457 x 10(-11) A/cm2 at 3 V are achieved which are suitable for analog and mixed signal applications. We found that the anodization voltage played a major role in electrical and structural properties of the thin film. This work suggests that the anodization method can offer crystalline multilayer dielectric stack required for high performance MIM capacitor.

  4. Metal-insulator-metal waveguides for particle trapping and separation.

    PubMed

    Khan, Saara A; Chang, Chia-Ming; Zaidi, Zain; Shin, Wonseok; Shi, Yu; Ellerbee Bowden, Audrey K; Solgaard, Olav

    2016-06-21

    Optical particle trapping and separation are essential techniques in the fields of biology and chemistry. In many applications, it is important to identify passive separation techniques that only rely on intrinsic forces in a system with a fixed device geometry. We present a dual-waveguide sorter that utilizes the loss of metal-insulator-metal (MIM) waveguides for completely passive particle trapping and separation and is created using a unique angle sidewall deposition process. Our experiments show that an inner Au-Si3N4-Au waveguide is able to trap particles within the propagation distance of its dominant modes and release the particles into an outer Au-H2O-Au waveguide. The outer waveguide then propels the particles and separates them by size. The separation results are accurately modeled by a first-principles, analytical model.

  5. Graphene oxide-based flexible metal-insulator-metal capacitors

    NASA Astrophysics Data System (ADS)

    Bag, A.; Hota, M. K.; Mallik, S.; Maiti, C. K.

    2013-05-01

    This work explores the fabrication of graphene oxide (GO)-based metal-insulator-metal (MIM) capacitors on flexible polyethylene terephthalate (PET) substrates. Electrical properties are studied in detail. A high capacitance density of ˜4 fF µm-2 measured at 1 MHz and permittivity of ˜6 have been obtained. A low voltage coefficient of capacitance, VCC-α, and a low dielectric loss tangent indicate the potential of GO-based MIM capacitors for RF applications. The constant voltage stressing study has shown a high reliability against degradation up to a projected period of 10 years. Degradation in capacitance of the devices on flexible substrates has been studied by bending radius down to 1 cm even up to 6000 times of repeated bending.

  6. Universal intermediate phases of dilute electronic and molecular glasses.

    PubMed

    Phillips, J C

    2002-05-27

    Generic intermediate phases with anomalous properties exist over narrow composition ranges adjacent to connectivity transitions. Analysis of both simple classical and complex quantum percolation shows how topological concepts can be used to understand many mysterious properties of high temperature superconductors, including the remarkably similar phase diagrams of La(2-x)Sr(x)CuO4 and C60(+y). Predictions are made for novel threshold behavior of the impurity band metal-insulator transition in two dimensions.

  7. Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

    PubMed

    Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

    2016-06-01

    Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values. PMID:27172429

  8. Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

    PubMed

    Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

    2016-06-01

    Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values.

  9. Electroweak phase transition in ultraminimal technicolor

    SciTech Connect

    Jaervinen, Matti; Sannino, Francesco; Ryttov, Thomas A.

    2009-05-01

    We unveil the temperature-dependent electroweak phase transition in new extensions of the standard model in which the electroweak symmetry is spontaneously broken via strongly coupled, nearly conformal dynamics achieved by the means of multiple matter representations. In particular, we focus on the low energy effective theory introduced to describe ultra minimal walking technicolor at the phase transition. Using the one-loop effective potential with ring improvement, we identify regions of parameter space, which yield a strong first-order transition. A striking feature of the model is the existence of a second phase transition associated to the electroweak-singlet sector. The interplay between these two transitions leads to an extremely rich phase diagram.

  10. Phase transitions in the early universe

    NASA Astrophysics Data System (ADS)

    Wainwright, Carroll L.

    I explore the theory and computation of early-Universe finite-temperature phase transitions involving scalar fields. I focus primarily on the electroweak phase transition, but some of the methods I develop are applicable to any scalar-field cosmological phase transition (such as the computation of the lifetime of zero-temperature metastable vacua). I begin by examining phase transition thermodynamics with many extra coupled degrees of freedom, finding that such transitions have the potential to produce large amounts of entropy and can significantly dilute the concentration of thermal relic species (e.g., dark matter). I then detail a novel algorithm for calculating instanton solutions with multiple dynamic scalar fields, and present a computational package which implements the algorithm and computes the finite-temperature phase structure. Next, I discuss theoretical and practical problems of gauge dependence in finite-temperature effective potentials, using the Abelian Higgs and Abelian Higgs plus singlet models to show the severity of the problem. Finally, I apply the aforementioned algorithm to the electroweak phase transition in the next-to-minimal supersymmetric standard model (NMSSM). My collaborators and I find viable regions of the NMSSM which contain a strongly first-order phase transition and large enough CP violation to support electroweak baryogenesis, evade electric dipole moment constraints, and provide a dark matter candidate which could produce the observed 130 GeV gamma-ray line observed in the galactic center by the Fermi Gamma-ray Space Telescope.

  11. Phase transitions in QCD and string theory

    NASA Astrophysics Data System (ADS)

    Campell, Bruce A.; Ellis, John; Kalara, S.; Nanopoulos, D. V.; Olive, Keith A.

    1991-02-01

    We develop a unified effective field theory approach to the high-temperature phase transitions in QCD and string theory, incorporating winding modes (time-like Polyakov loops, vortices) as well as low-mass states (pseudoscalar mesons and glueballs, matter and dilaton supermultiplets). Anomalous scale invariance and the Z3 structure of the centre of SU(3) decree a first-order phase transition with simultaneous deconfinement and Polyakov loop condensation in QCD, whereas string vortex condensation is a second-order phase transition breaking a Z2 symmetry. We argue that vortex condensation is accompanied by a dilaton phase transition to a strong coupling regime, and comment on the possible role of soliton degrees of freedom in the high-temperature string phase. On leave of absence from the School of Physics & Astronomy, University of Minnesota, Minneapolis, Minnesota, USA.

  12. Phase transition of aragonite in abalone nacre

    NASA Astrophysics Data System (ADS)

    An, Yuanlin; Liu, Zhiming; Wu, Wenjian

    2013-04-01

    Nacre is composed of about 95 vol.% aragonite and 5 vol.% biopolymer and famous for its "brick and mortar" microstructure. The phase transition temperature of aragonite in nacre is lower than the pure aragonite. In situ XRD was used to identify the phase transition temperature from aragonite to calcite in nacre, based on the analysis of TG-DSC of fresh nacre and demineralized nacre. The results indicate that the microstructure and biopolymer are the two main factors that influence the phase transition temperature of aragonite in nacre.

  13. QCD Phase Transition in Dgp Brane Cosmology

    NASA Astrophysics Data System (ADS)

    Atazadeh, K.; Ghezelbash, A. M.; Sepangi, H. R.

    2012-08-01

    In the standard picture of cosmology it is predicted that a phase transition, associated with chiral symmetry breaking after the electroweak transition, has occurred at approximately 10μ seconds after the Big Bang to convert a plasma of free quarks and gluons into hadrons. We consider the quark-hadron phase transition in a Dvali, Gabadadze and Porrati (DGP) brane world scenario within an effective model of QCD. We study the evolution of the physical quantities useful for the study of the early universe, namely, the energy density, temperature and the scale factor before, during and after the phase transition. Also, due to the high energy density in the early universe, we consider the quadratic energy density term that appears in the Friedmann equation. In DGP brane models such a term corresponds to the negative branch (ɛ = -1) of the Friedmann equation when the Hubble radius is much smaller than the crossover length in 4D and 5D regimes. We show that for different values of the cosmological constant on a brane, λ, phase transition occurs and results in decreasing the effective temperature of the quark-gluon plasma and of the hadronic fluid. We then consider the quark-hadron transition in the smooth crossover regime at high and low temperatures and show that such a transition occurs along with decreasing the effective temperature of the quark-gluon plasma during the process of the phase transition.

  14. Low temperature transformation from antiferromagnetic to ferromagnetic order in impurity system Ge:As near the insulator-metal phase transition

    SciTech Connect

    Veinger, A. I.; Zabrodskii, A. G.; Tisnek, T. V.; Goloshchapov, S. I.; Semenikhin, P. V.; Makarova, T. L.

    2014-08-20

    The low-temperature transformation from antiparallel to parallel spin orientation in a nonmagnetic compensated system Ge:As semiconductor near the metal-insulator phase transition has been experimentally observed. This effect is manifested in the temperature dependences of the impurity magnetic susceptibility obtained by integration of the spin resonance absorption line. These dependences show that the spin density falls in the medium temperature range (10-100 K) and grows at low temperatures. The effect is confirmed by the specific temperature features of the g-factor and inverse magnetic susceptibility. As the relative content of a compensating impurity (gallium) is made lower than 0.7, the transition temperature begins to decrease and, at a degree of compensation < 0.3, falls outside the temperature range under study (i.e., below 2 K)

  15. Phase transition phenomenon: A compound measure analysis

    NASA Astrophysics Data System (ADS)

    Kang, Bo Soo; Park, Chanhi; Ryu, Doojin; Song, Wonho

    2015-06-01

    This study investigates the well-documented phenomenon of phase transition in financial markets using combined information from both return and volume changes within short time intervals. We suggest a new measure for the phase transition behaviour of markets, calculated as a return distribution conditional on local variance in volume imbalance, and show that this measure successfully captures phase transition behaviour under various conditions. We analyse the intraday trade and quote dataset from the KOSPI 200 index futures, which includes detailed information on the original order size and the type of each initiating investor. We find that among these two competing factors, the submitted order size yields more explanatory power on the phenomenon of market phase transition than the investor type.

  16. Studying Phase Transitions in Nuclear Collisions

    SciTech Connect

    Mishustin, I.N.

    2000-12-31

    Three main topics are discussed concerning the theoretical description and observable signatures of possible phase transitions in nuclear collisions. The first one is related to the multifragmentation of equilibrated sources and its connection to a liquid-gas phase transition in finite systems. The second one deals with the Coulomb excitation of ultrarelativistic heavy ions resulting in their deep disintegration. The third topic is devoted to the description of a first-order phase transition in rapidly expanding matter. The resulting picture is that a strong collective flow of matter will lead to the fragmentation of a metastable phase into droplets. If the transition from quark-gluon plasma to hadron gas is of the first order, it will manifest itself by strong nonstatistical fluctuations in observable hadron distributions.

  17. Critical behaviours of contact near phase transitions

    PubMed Central

    Chen, Y.-Y.; Jiang, Y.-Z.; Guan, X.-W.; Zhou, Qi

    2014-01-01

    A central quantity of importance for ultracold atoms is contact, which measures two-body correlations at short distances in dilute systems. It appears in universal relations among thermodynamic quantities, such as large momentum tails, energy and dynamic structure factors, through the renowned Tan relations. However, a conceptual question remains open as to whether or not contact can signify phase transitions that are insensitive to short-range physics. Here we show that, near a continuous classical or quantum phase transition, contact exhibits a variety of critical behaviours, including scaling laws and critical exponents that are uniquely determined by the universality class of the phase transition, and a constant contact per particle. We also use a prototypical exactly solvable model to demonstrate these critical behaviours in one-dimensional strongly interacting fermions. Our work establishes an intrinsic connection between the universality of dilute many-body systems and universal critical phenomena near a phase transition. PMID:25346226

  18. Critical behaviours of contact near phase transitions.

    PubMed

    Chen, Y-Y; Jiang, Y-Z; Guan, X-W; Zhou, Qi

    2014-01-01

    A central quantity of importance for ultracold atoms is contact, which measures two-body correlations at short distances in dilute systems. It appears in universal relations among thermodynamic quantities, such as large momentum tails, energy and dynamic structure factors, through the renowned Tan relations. However, a conceptual question remains open as to whether or not contact can signify phase transitions that are insensitive to short-range physics. Here we show that, near a continuous classical or quantum phase transition, contact exhibits a variety of critical behaviours, including scaling laws and critical exponents that are uniquely determined by the universality class of the phase transition, and a constant contact per particle. We also use a prototypical exactly solvable model to demonstrate these critical behaviours in one-dimensional strongly interacting fermions. Our work establishes an intrinsic connection between the universality of dilute many-body systems and universal critical phenomena near a phase transition. PMID:25346226

  19. Thermal Phase Transitions in Finite Quantum Systems

    SciTech Connect

    Dean, D.J.

    2001-10-18

    In this Proceedings, the author will describe the behavior of two different quantum-mechanical systems as a function of increasing temperature. While these systems are somewhat different, the questions addressed are very similar, namely, how does one describe transitions in phase of a finite many-body system; how does one recognize these transitions in practical calculations; and how may one obtain the order of the transition.

  20. Magnetic fields from the electroweak phase transition

    SciTech Connect

    Tornkvist, O.

    1998-02-01

    I review some of the mechanisms through which primordial magnetic fields may be created in the electroweak phase transition. I show that no magnetic fields are produced initially from two-bubble collisions in a first-order transition. The initial field produced in a three-bubble collision is computed. The evolution of fields at later times is discussed.

  1. Nuclear binding near a quantum phase transition

    NASA Astrophysics Data System (ADS)

    Lee, Dean

    2016-03-01

    I review recent ab initio results by the Nuclear Lattice Effective Field Theory Collaboration showing that nature lies close to a quantum phase transition between an alpha-particle gas and nuclear liquid. I discuss the control parameter of this transition and the implications for clustering in nuclei and improving ab initio nuclear structure calculations.

  2. Gravitational Effects on the Inflationary Phase Transition

    NASA Astrophysics Data System (ADS)

    Jensen, Lars Gerhard

    The thesis contains work on phase transitions in field theory with gravity present. Results on bubble nucleation in gravitational fields are included. A specific model has been examined, the SU(5) Grand Unified Theory of the Coleman-Weinberg type coupled to gravity. The modes of the phase transition have been analyzed with respect to the requirement of obtaining sufficient inflation to resolve the horizon puzzle and the flatness/oldness puzzle.

  3. Dynamic phase transition in diluted Ising model

    NASA Astrophysics Data System (ADS)

    Chattopadhyay, Sourav; Gorai, Gopal; Santra, S. B.

    2015-06-01

    Dynamic phase transition in disordered Ising model in two dimensions has been studied in presence of external time dependent oscillating magnetic field applying Glauber Monte Carlo techniques. Dynamic phase transitions are identified estimating dynamic order parameter against temperature for different concentrations of disorder. For a given field strength and frequency for which there was no hysteresis, it is observed that disorder is able induce hysteresis in the system. Effect of increasing concentration of disorder on hysteresis loop area has also been studied.

  4. Persistent homology analysis of phase transitions

    NASA Astrophysics Data System (ADS)

    Donato, Irene; Gori, Matteo; Pettini, Marco; Petri, Giovanni; De Nigris, Sarah; Franzosi, Roberto; Vaccarino, Francesco

    2016-05-01

    Persistent homology analysis, a recently developed computational method in algebraic topology, is applied to the study of the phase transitions undergone by the so-called mean-field XY model and by the ϕ4 lattice model, respectively. For both models the relationship between phase transitions and the topological properties of certain submanifolds of configuration space are exactly known. It turns out that these a priori known facts are clearly retrieved by persistent homology analysis of dynamically sampled submanifolds of configuration space.

  5. Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO x

    NASA Astrophysics Data System (ADS)

    Tikhov, S. V.; Gorshkov, O. N.; Antonov, I. N.; Kasatkin, A. P.; Korolev, D. S.; Belov, A. I.; Mikhaylov, A. N.; Tetel'baum, D. I.

    2016-05-01

    The change of the immitance of the metal-insulator-metal memristive structures based on SiOx, which is observed during electroforming and resistive switching, confirms the formation of conducting channels (filaments) in the insulator during forming and their rupture upon a transition of the structure to a highresistance state. The observed switching of the differential capacitance and conductivity synchronously with the switching of current (resistance) can substantially extend the functional applications of memristive devices of this type.

  6. Reentrant phase transition in charged colloidal suspensions

    NASA Astrophysics Data System (ADS)

    Arora, Akhilesh K.; Tata, B. V. R.; Sood, A. K.; Kesavamoorthy, R.

    1988-06-01

    We report the observation of a novel phase transition in dilute aqueous suspensions of polystyrene particles as a function of ionic impurity concentration C. The suspension phase separates into dense and rare phases only for a restricted range of C which depends on particle concentration n. The dense phase has liquidlike or crystalline order depending on n and C. Free energies of the homogeneous and the phase-separated states are calculated with an effective interparticle potential. The calculated phase diagram is in qualitative agreement with the present experimental results.

  7. Contemporary Research of Dynamically Induced Phase Transitions

    NASA Astrophysics Data System (ADS)

    Hull, Lawrence

    2015-06-01

    Dynamically induced phase transitions in metals, within the present discussion, are those that take place within a time scale characteristic of the shock waves and any reflections or rarefactions involved in the loading structure along with associated plastic flow. Contemporary topics of interest include the influence of loading wave shape, the effect of shear produced by directionality of the loading relative to the sample dimensions and initial velocity field, and the loading duration (kinetic effects, hysteresis) on the appearance and longevity of a transformed phase. These topics often arise while considering the loading of parts of various shapes with high explosives, are typically two or three-dimensional, and are often selected because of the potential of the transformed phase to significantly modify the motion. In this paper, we look at current work on phase transitions in metals influenced by shear reported in the literature, and relate recent work conducted at Los Alamos on iron's epsilon phase transition that indicates a significant response to shear produced by reflected elastic waves. A brief discussion of criteria for the occurrence of stress induced phase transitions is provided. Closing remarks regard certain physical processes, such as fragmentation and jet formation, which may be strongly influenced by phase transitions. Supported by the DoD/DOE Joint Munitions Technology Development Program.

  8. Cancer as a dynamical phase transition

    PubMed Central

    2011-01-01

    This paper discusses the properties of cancer cells from a new perspective based on an analogy with phase transitions in physical systems. Similarities in terms of instabilities and attractor states are outlined and differences discussed. While physical phase transitions typically occur at or near thermodynamic equilibrium, a normal-to-cancer (NTC) transition is a dynamical non-equilibrium phenomenon, which depends on both metabolic energy supply and local physiological conditions. A number of implications for preventative and therapeutic strategies are outlined. PMID:21867509

  9. Supercooling and phase coexistence in cosmological phase transitions

    SciTech Connect

    Megevand, Ariel; Sanchez, Alejandro D.

    2008-03-15

    Cosmological phase transitions are predicted by particle physics models, and have a variety of important cosmological consequences, which depend strongly on the dynamics of the transition. In this work we investigate in detail the general features of the development of a first-order phase transition. We find thermodynamical constraints on some quantities that determine the dynamics, namely, the latent heat, the radiation energy density, and the false-vacuum energy density. Using a simple model with a Higgs field, we study numerically the amount and duration of supercooling and the subsequent reheating and phase coexistence. We analyze the dependence of the dynamics on the different parameters of the model, namely, the energy scale, the number of degrees of freedom, and the couplings of the scalar field with bosons and fermions. We also inspect the implications for the cosmological outcomes of the phase transition.

  10. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    DOE PAGESBeta

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively,more » by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.« less

  11. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    SciTech Connect

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively, by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.

  12. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    PubMed Central

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang-Wook; Podzorov, Vitaly

    2014-01-01

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. Here we report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively, by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications. PMID:25308251

  13. Topological phases and phase transitions on the honeycomb lattice

    NASA Astrophysics Data System (ADS)

    Yang, Yuan; Li, Xiaobing; Xing, Dingyu

    2016-10-01

    We investigate possible phase transitions among the different topological insulators in a honeycomb lattice under the combined influence of spin-orbit couplings and staggered magnetic flux. We observe a series of topological phase transitions when tuning the flux amplitude, and find topologically nontrivial phases with high Chern number or spin-Chern number. Through tuning the exchange field, we also find a new quantum state which exhibits the electronic properties of both the quantum spin Hall state and quantum anomalous Hall state. The topological characterization based on the Chern number and the spin-Chern number are in good agreement with the edge-state picture of various topological phases.

  14. Magnetic phase transitions in layered intermetallic compounds

    NASA Astrophysics Data System (ADS)

    Mushnikov, N. V.; Gerasimov, E. G.; Rosenfeld, E. V.; Terent'ev, P. B.; Gaviko, V. S.

    2012-10-01

    Magnetic, magnetoelastic, and magnetotransport properties have been studied for the RMn2Si2 and RMn6Sn6 (R is a rare earth metal) intermetallic compounds with natural layered structure. The compounds exhibit wide variety of magnetic structures and magnetic phase transitions. Substitution of different R atoms allows us to modify the interatomic distances and interlayer exchange interactions thus providing the transition from antiferromagnetic to ferromagnetic state. Near the boundary of this transition the magnetic structures are very sensitive to the external field, temperature and pressure. The field-induced transitions are accompanied by considerable change in the sample size and resistivity. It has been shown that various magnetic structures and magnetic phase transitions observed in the layered compounds arise as a result of competition of the Mn-Mn and Mn-R exchange interactions.

  15. Continuous and discontinuous topological quantum phase transitions

    NASA Astrophysics Data System (ADS)

    Roy, Bitan; Goswami, Pallab; Sau, Jay D.

    2016-07-01

    The continuous quantum phase transition between noninteracting, time-reversal symmetric topological and trivial insulators in three dimensions is described by the massless Dirac fermion. We address the stability of this quantum critical point against short range electronic interactions by using renormalization group analysis and mean field theory. For sufficiently weak interactions, we show that the nature of the direct transition remains unchanged. Beyond a critical strength of interactions we find that either (i) there is a direct first order transition between two time reversal symmetric insulators or (ii) the direct transition is eliminated by an intervening time reversal and inversion odd "axionic" insulator. We also demonstrate the existence of an interaction driven first order quantum phase transition between topological and trivial gapped states in lower dimensions.

  16. Symmetry relationship and strain-induced transitions between insulating M1 and M2 and metallic R phases of vanadium dioxide.

    PubMed

    Tselev, A; Luk'yanchuk, I A; Ivanov, I N; Budai, J D; Tischler, J Z; Strelcov, E; Kolmakov, A; Kalinin, S V

    2010-11-10

    The ability to synthesize VO2 in the form of single-crystalline nanobeams and nano- and microcrystals uncovered a number of previously unknown aspects of the metal-insulator transition (MIT) in this oxide. In particular, several reports demonstrated that the MIT can proceed through competition between two monoclinic (insulating) phases M1 and M2 and the tetragonal (metallic) R phase under influence of strain. The nature of such phase behavior has been not identified. Here we show that the competition between M1 and M2 phases is purely lattice-symmetry-driven. Within the framework of the Ginzburg-Landau formalism, both M phases correspond to different directions of the same four-component structural order parameter, and as a consequence, the M2 phase can appear under a small perturbation of the M1 structure such as doping or stress. We analyze the strain-controlled phase diagram of VO2 in the vicinity of the R-M2-M1 triple point using the Ginzburg-Landau formalism and identify and experimentally verify the pathways for strain-control of the transition. These insights open the door toward more systematic approaches to synthesis of VO2 nanostructures in desired phase states and to use of external fields in the control of the VO2 phase states. Additionally, we report observation of the triclinic T phase at the heterophase domain boundaries in strained quasi-two-dimensional VO2 nanoplatelets, and theoretically predict phases that have not been previously observed.

  17. Quantum trajectory phase transitions in the micromaser.

    PubMed

    Garrahan, Juan P; Armour, Andrew D; Lesanovsky, Igor

    2011-08-01

    We study the dynamics of the single-atom maser, or micromaser, by means of the recently introduced method of thermodynamics of quantum jump trajectories. We find that the dynamics of the micromaser displays multiple space-time phase transitions, i.e., phase transitions in ensembles of quantum jump trajectories. This rich dynamical phase structure becomes apparent when trajectories are classified by dynamical observables that quantify dynamical activity, such as the number of atoms that have changed state while traversing the cavity. The space-time transitions can be either first order or continuous, and are controlled not just by standard parameters of the micromaser but also by nonequilibrium "counting" fields. We discuss how the dynamical phase behavior relates to the better known stationary-state properties of the micromaser. PMID:21928957

  18. Microgravity Two-Phase Flow Transition

    NASA Technical Reports Server (NTRS)

    Parang, M.; Chao, D.

    1999-01-01

    Two-phase flows under microgravity condition find a large number of important applications in fluid handling and storage, and spacecraft thermal management. Specifically, under microgravity condition heat transfer between heat exchanger surfaces and fluids depend critically on the distribution and interaction between different fluid phases which are often qualitatively different from the gravity-based systems. Heat transfer and flow analysis in two-phase flows under these conditions require a clear understanding of the flow pattern transition and development of appropriate dimensionless scales for its modeling and prediction. The physics of this flow is however very complex and remains poorly understood. This has led to various inadequacies in flow and heat transfer modeling and has made prediction of flow transition difficult in engineering design of efficient thermal and flow systems. In the present study the available published data for flow transition under microgravity condition are considered for mapping. The transition from slug to annular flow and from bubbly to slug flow are mapped using dimensionless variable combination developed in a previous study by the authors. The result indicate that the new maps describe the flow transitions reasonably well over the range of the data available. The transition maps are examined and the results are discussed in relation to the presumed balance of forces and flow dynamics. It is suggested that further evaluation of the proposed flow and transition mapping will require a wider range of microgravity data expected to be made available in future studies.

  19. Phase Transitions in Thin Block Copolymer Films

    SciTech Connect

    Kramer, Edward J.

    2010-10-08

    David Turnbull's experiments and theoretical insights paved the way for much of our modern understanding of phase transitions in materials. In recognition of his contributions, this lecture will concentrate on phase transitions in a material system not considered by Turnbull, thin diblock copolymer films. Well-ordered block copolymer films are attracting increasing interest as we attempt to extend photolithography to smaller dimensions. In the case of diblock copolymer spheres, an ordered monolayer is hexagonal, but the ordered bulk is body-centered cubic (bcc). There is no hexagonal plane in the bcc structure, so a phase transition must occur as n, the number of layers of spheres in the film, increases. How this phase transition occurs with n and how it can be manipulated is the subject of the first part of my presentation. In the second part of the talk, I show that monolayers of diblock copolymer spheres and cylinders undergo order-to-disorder transitions that differ greatly from those of the bulk. These ordered 2D monolayers are susceptible to phonon-generated disorder as well as to thermal generation of defects, such as dislocations, which, while they are line defects in 3D, are point defects in 2D. The results are compared to the theories of melting of 2D crystals (spheres) and of 2D smectic liquid crystals (cylinders), a comparison that will allow us to understand most, but not all, of the features of these order-disorder transitions that occur as the temperature is increased.

  20. Shaping Crystal-Crystal Phase Transitions

    NASA Astrophysics Data System (ADS)

    Du, Xiyu; van Anders, Greg; Dshemuchadse, Julia; Glotzer, Sharon

    Previous computational and experimental studies have shown self-assembled structure depends strongly on building block shape. New synthesis techniques have led to building blocks with reconfigurable shape and it has been demonstrated that building block reconfiguration can induce bulk structural reconfiguration. However, we do not understand systematically how this transition happens as a function of building block shape. Using a recently developed ``digital alchemy'' framework, we study the thermodynamics of shape-driven crystal-crystal transitions. We find examples of shape-driven bulk reconfiguration that are accompanied by first-order phase transitions, and bulk reconfiguration that occurs without any thermodynamic phase transition. Our results suggest that for well-chosen shapes and structures, there exist facile means of bulk reconfiguration, and that shape-driven bulk reconfiguration provides a viable mechanism for developing functional materials.

  1. Possible Structural Phase Transitions in Transition Metal Dichalcogenides

    NASA Astrophysics Data System (ADS)

    Durgun, Engin; Sahin, Hasan; Peeters, Francois

    2014-03-01

    Most of the the transition metal dichalcogenides (TMD) have graphene-like hexagonal crystal structure which are composed of metal atom layers (M) sandwiched between layers of chalcogen atoms (X) and these structures have MX2 stoichiometry. Chalcogen layers can be stacked on top of each other in two different forms: H phase made of trigonal prismatic holes for metal atoms and T phase that consists staggered chalcogen layers forming octahedral holes for metals. Among the TMDs that have been reported to be stable, individual layers of MoS2, MoSe2, WS2 and WSe2 have 1H structure in their ground state while dichalcogens of Ti, V and Ta prefer the 1T phase. In our study we investigate the physical mechanisms underlying for the possible phase transitions in TMDs. Our calculations based on first-principles techniques reveal that in addition to H and T phases various distorted H and T phases can be also stabilized by point defects. These new phases have entirely different electronic properties.

  2. Phase transitions in multiplicative competitive processes

    SciTech Connect

    Shimazaki, Hideaki; Niebur, Ernst

    2005-07-01

    We introduce a discrete multiplicative process as a generic model of competition. Players with different abilities successively join the game and compete for finite resources. Emergence of dominant players and evolutionary development occur as a phase transition. The competitive dynamics underlying this transition is understood from a formal analogy to statistical mechanics. The theory is applicable to bacterial competition, predicting novel population dynamics near criticality.

  3. Friction forces on phase transition fronts

    SciTech Connect

    Mégevand, Ariel

    2013-07-01

    In cosmological first-order phase transitions, the microscopic interaction of the phase transition fronts with non-equilibrium plasma particles manifests itself macroscopically as friction forces. In general, it is a nontrivial problem to compute these forces, and only two limits have been studied, namely, that of very slow walls and, more recently, ultra-relativistic walls which run away. In this paper we consider ultra-relativistic velocities and show that stationary solutions still exist when the parameters allow the existence of runaway walls. Hence, we discuss the necessary and sufficient conditions for the fronts to actually run away. We also propose a phenomenological model for the friction, which interpolates between the non-relativistic and ultra-relativistic values. Thus, the friction depends on two friction coefficients which can be calculated for specific models. We then study the velocity of phase transition fronts as a function of the friction parameters, the thermodynamic parameters, and the amount of supercooling.

  4. Noisy quantum phase transitions: an intuitive approach

    NASA Astrophysics Data System (ADS)

    Dalla Torre, Emanuele G.; Demler, Eugene; Giamarchi, Thierry; Altman, Ehud

    2012-11-01

    Equilibrium thermal noise is known to destroy any quantum phase transition. What are the effects of non-equilibrium noise? In two recent papers, we have considered the specific case of a resistively shunted Josephson junction driven by 1/f charge noise. At equilibrium, this system undergoes a sharp quantum phase transition at a critical value of the shunt resistance. By applying a real-time renormalization group approach, we found that the noise has three main effects: it shifts the phase transition, renormalizes the resistance and generates an effective temperature. In this paper, we explain how to understand these effects using simpler arguments based on Kirchhoff laws and time-dependent perturbation theory. We also show how these effects modify physical observables and especially the current-voltage characteristic of the junction. In the appendix, we describe two possible realizations of the model with ultracold atoms confined to one dimension.

  5. The tetragonal-like to rutile structural phase transition in epitaxial VO2/TiO2 (001) thick films

    NASA Astrophysics Data System (ADS)

    Qiu, Hongbo; Yang, Memgmeng; Dong, Yongqi; Xu, Han; Hong, Bin; Gu, Yueliang; Yang, Yuanjun; Zou, Chongwen; Luo, Zhenlin; Gao, Chen

    2015-11-01

    A controllable metal-insulator transition (MIT) of VO2 has been highly desired due to its huge potential applications in memory storage, smart windows or optical switching devices. Recently, interfacial strain engineering has been recognized as an effective approach to tuning the MIT of epitaxial VO2 films. However, the strain-involved structural evolution during the MIT process is still not clear, which prevents comprehensively understanding and utilizing interfacial strain engineering in VO2 films. In this work, we have systematically studied the epitaxial VO2 thick films grown on TiO2 (001) single crystal substrate and the structural transition at the boundary of MIT region. By using in situ temperature-dependent high-resolution x-ray diffractions, a tetragonal-like (‘T-like’) to ‘rutile’ structural phase transition is identified during the MIT process. The room-temperature crystal phase of epitaxial VO2/TiO2(001) thick film is clarified to be tetragonal-like, neither strained-rutile phase nor monoclinic phase. The calculated atomic structure of this T-like phase VO2 resembles that of the M1 phase VO2, which has been verified by their similar Raman spectra. More, the crystal lattices of the coexisted phases in the MIT region were revealed in detail. The current findings will not only show some clues on the MIT mechanism study from the structural point of view, but also favor the interface engineering assisted VO2-based devices and applications in the future.

  6. Late-time cosmological phase transitions

    SciTech Connect

    Schramm, D.N. Fermi National Accelerator Lab., Batavia, IL )

    1990-11-01

    It is shown that the potential galaxy formation and large-scale structure problems of objects existing at high redshifts (Z {approx gt} 5), structures existing on scales of 100M pc as well as velocity flows on such scales, and minimal microwave anisotropies ({Delta}T/T) {approx lt} 10{sup {minus}5} can be solved if the seeds needed to generate structure form in a vacuum phase transition after decoupling. It is argued that the basic physics of such a phase transition is no more exotic than that utilized in the more traditional GUT scale phase transitions, and that, just as in the GUT case, significant random gaussian fluctuations and/or topological defects can form. Scale lengths of {approximately}100M pc for large-scale structure as well as {approximately}1 M pc for galaxy formation occur naturally. Possible support for new physics that might be associated with such a late-time transition comes from the preliminary results of the SAGE solar neutrino experiment, implying neutrino flavor mixing with values similar to those required for a late-time transition. It is also noted that a see-saw model for the neutrino masses might also imply a tau neutrino mass that is an ideal hot dark matter candidate. However, in general either hot or cold dark matter can be consistent with a late-time transition. 47 refs., 2 figs.

  7. Shape phase transitions and critical points

    SciTech Connect

    Alonso, C. E.; Arias, J. M.; Fortunato, L.; Vitturi, A.

    2009-05-04

    We investigate different aspects connected with shape phase transitions in nuclei and the possible occurrence of dynamical symmetries at the critical points. We discuss in particular the behaviour of the neighbour odd nuclei at the vicinity of the critical points in the even nuclei. We consider both the case of the transition from the vibrational behaviour to the gamma-unstable deformation (characterized within the collective Bohr hamiltonian by the E(5) critical point symmetry) and the case of the transition from the vibrational behaviour to the stable axial deformation (characterized by the X(5) symmetry). The odd particle is assumed to be moving in the three single particle orbitals j = 1/2,3/2,5/2, a set of orbitals that is known to lead to possible supersymmetric cases. The coupling of the odd particle to the Bohr hamiltonian does lead in fact in the former case at the critical point to the E(5/12) boson-fermion dynamical symmetry. An alternative approach to the two shape transitions is based on the Interacting Boson Fermion Model. In this case suitably parametrized boson-fermion hamiltonians can describe the evolution of the odd system along the shape transitions. At the critical points both energy spectra and electromagnetic transitions were found to display characteristic patterns similar to those displayed by the even nuclei at the corresponding critical point. The behaviour of the odd nuclei can therefore be seen as necessary complementary signatures of the occurrence of the phase transitions.

  8. Phase transition in loop quantum gravity

    NASA Astrophysics Data System (ADS)

    Mäkelä, Jarmo

    2016-04-01

    We point out that with a specific counting of states loop quantum gravity implies that black holes perform a phase transition at a certain characteristic temperature TC . In this phase transition the punctures of the spin network on the stretched horizon of the black hole jump, in effect, from the vacuum to the excited states. The characteristic temperature TC may be regarded as the lowest possible temperature of the hole. From the point of view of a distant observer at rest with respect to the hole, the characteristic temperature TC corresponds to the Hawking temperature of the hole.

  9. Network traffic behaviour near phase transition point

    NASA Astrophysics Data System (ADS)

    Lawniczak, A. T.; Tang, X.

    2006-03-01

    We explore packet traffic dynamics in a data network model near phase transition point from free flow to congestion. The model of data network is an abstraction of the Network Layer of the OSI (Open Systems Interconnect) Reference Model of packet switching networks. The Network Layer is responsible for routing packets across the network from their sources to their destinations and for control of congestion in data networks. Using the model we investigate spatio-temporal packets traffic dynamics near the phase transition point for various network connection topologies, and static and adaptive routing algorithms. We present selected simulation results and analyze them.

  10. Solid-liquid phase transition in argon

    NASA Technical Reports Server (NTRS)

    Tsang, T.; Tang, H. T.

    1978-01-01

    Starting from the Lennard-Jones interatomic potential, a modified cell theory has been used to describe the solid-liquid phase transition in argon. The cell-size variations may be evaluated by a self-consistent condition. With the inclusion of cell-size variations, the transition temperature, the solid and liquid densities, and the liquid-phase radial-distribution functions have been calculated. These ab initio results are in satisfactory agreement with molecular-dynamics calculations as well as experimental data on argon.

  11. Quantum phase transitions in antiferromagnets and superfluids

    NASA Astrophysics Data System (ADS)

    Sachdev, Subir; Vojta, Matthias

    2000-05-01

    We present a general introduction to the non-zero temperature dynamic and transport properties of low-dimensional systems near a quantum phase transition. Basic results are reviewed in the context of experiments on the spin-ladder compounds, insulating two-dimensional antiferromagnets, and double-layer quantum Hall systems. Recent large N computations on an extended t- J model (Phys. Rev. Lett. 83 (1999) 3916) motivate a global scenario of the quantum phases and transitions in the high-temperature superconductors, and connections are made to numerous experiments.

  12. Holographic endpoint of spatially modulated phase transition

    SciTech Connect

    Ooguri, Hirosi; Park, Chang-Soon

    2010-12-15

    In a previous paper [S. Nakamura, H. Ooguri, and C. S. Park, Phys. Rev. D 81, 044018 (2010)], we showed that the Reissner-Nordstroem black hole in the five-dimensional anti-de Sitter space coupled to the Maxwell theory with the Chern-Simons term is unstable when the Chern-Simons coupling is sufficiently large. In the dual conformal field theory, the instability suggests a spatially modulated phase transition. In this paper, we construct and analyze nonlinear solutions which describe the endpoint of this phase transition. In the limit where the Chern-Simons coupling is large, we find that the phase transition is of the second order with the mean field critical exponent. However, the dispersion relation with the Van Hove singularity enhances quantum corrections in the bulk, and we argue that this changes the order of the phase transition from the second to the first. We compute linear response functions in the nonlinear solution and find an infinite off-diagonal DC conductivity in the new phase.

  13. Theory and phenomenology of electroweak phase transitions

    NASA Astrophysics Data System (ADS)

    Patel, Hiren H.

    An open problem in cosmology is to explain the origin of baryon abundance implied by observational cosmology. Among the many proposed explanations, electroweak baryogenesis is particularly attractive in that its ingredients is discoverable by modern experiments. The analysis of the electroweak phase transition in the early universe comprises an integral component within the larger study of electroweak baryogenesis. In this work, I make a detailed investigation of the conventional analysis of the electroweak phase transition commonly found in literature, and explicitly demonstrate that results are not independent of the choice of gauge. In its place, I provide a manifestly gauge-independent method for the analysis, review sources of theoretical and numerical uncertainties, and explore avenues for further development. Next, I explore the dynamics of the electroweak phase transition in two minimal extensions of the Standard Model of particle physics. Within these simple models, I describe a novel pattern of electroweak symmetry breaking favorable for baryogenesis that can serve as a paradigm for phase transition analysis in more complicated models.

  14. Hysteresis in the phase transition of chocolate

    NASA Astrophysics Data System (ADS)

    Ren, Ruilong; Lu, Qunfeng; Lin, Sihua; Dong, Xiaoyan; Fu, Hao; Wu, Shaoyi; Wu, Minghe; Teng, Baohua

    2016-01-01

    We designed an experiment to reproduce the hysteresis phenomenon of chocolate appearing in the heating and cooling process, and then established a model to relate the solidification degree to the order parameter. Based on the Landau-Devonshire theory, our model gave a description of the hysteresis phenomenon in chocolate, which lays the foundations for the study of the phase transition behavior of chocolate.

  15. Dual condensate and QCD phase transition

    SciTech Connect

    Zhang Bo; Bruckmann, Falk; Fodor, Zoltan; Szabo, Kalman K.; Gattringer, Christof

    2011-05-23

    The dual condensate is a new QCD phase transition order parameter, which connnects confinement and chiral symmetry breaking as different mass limits. We discuss the relation between the fermion spectrum at general boundary conditions and the dual condensate and show numerical results for the latter from unquenched SU(3) lattice configurations.

  16. Interfacial phase transitions in conducting fluids.

    PubMed

    Freyland, Werner

    2008-02-21

    We present a review, largely based on recent experimental work of our group, on phase transitions at interfaces of fluid metals, alloys and ionic liquids. After a brief analysis of possible experimental errors and limitations of surface sensitive methods, we first deal with first-order wetting transitions at the liquid/vapour and liquid/wall interface in systems such as Ga-based alloys, K-KCl melts, and fluid Hg. The following chapter refers to surface freezing or surface induced crystallization in different metal alloys. The respective surface phase diagrams are discussed in comparison with their bulk counterpart. In the last part we present very recent investigations of ionic liquid interfaces, including order-disorder transitions at the liquid/vapour interface and examples of two-dimensional phase transitions at the electrified ionic liquid/metal interface. Finally, a simple electrowetting experiment with an ionic liquid droplet under vacuum is described which gives new insight into the contact angle saturation problem. The article ends up with a few perspective remarks on open problems and potential impact of interfacial phenomena on applied research. PMID:18259631

  17. Phase transitions in nonequilibrium traffic theory

    SciTech Connect

    Zhang, H.M.

    2000-02-01

    This paper uses the center difference scheme of Lax-Friedrichs to numerically solve a newly developed continuum traffic flow theory and the kinematic theory of Lighthill and Whitham, and Richards, and it studies the flow-concentration phase transitions in flow containing both shock and rarefaction waves. A homogeneous road with finite length was modeled by both theories. Numerical simulations show that both theories yield nearly identical results for two representative Riemann problems--one has a shock solution and the other a rarefaction wave solution. Their phase transition curves, however, are different: those derived from the new theory have two branches--one for acceleration flow and one for deceleration flow, whereas those derived from the LWR theory comprise a single curve--the equilibrium curve. The phase transition curves in the shock case agree well with certain experimental observations but disagree with others. This disagreement may be resolved by studying transitions among nonequilibrium states, which awaits further development of a more accurate finite difference approximation of the nonequilibrium theory.

  18. The transition to the metallic state in low density hydrogen.

    PubMed

    McMinis, Jeremy; Morales, Miguel A; Ceperley, David M; Kim, Jeongnim

    2015-11-21

    Solid atomic hydrogen is one of the simplest systems to undergo a metal-insulator transition. Near the transition, the electronic degrees of freedom become strongly correlated and their description provides a difficult challenge for theoretical methods. As a result, the order and density of the phase transition are still subject to debate. In this work, we use diffusion quantum Monte Carlo to benchmark the transition between paramagnetic and anti-ferromagnetic body centered cubic atomic hydrogen in its ground state. We locate the density of the transition by computing the equation of state for these two phases and identify the phase transition order by computing the band gap near the phase transition. These benchmark results show that the phase transition is continuous and occurs at a Wigner-Seitz radius of rs = 2.27(3) a0. We compare our results to previously reported density functional theory, Hedin's GW approximation, and dynamical mean field theory results. PMID:26590549

  19. Deconfinement Phase Transition and the Quark Condensate

    SciTech Connect

    Fischer, Christian S.

    2009-07-31

    We study the dual quark condensate as a signal for the confinement-deconfinement phase transition of QCD. This order parameter for center symmetry has been defined recently by Bilgici et al. within the framework of lattice QCD. In this work we determine the ordinary and the dual quark condensate with functional methods using a formulation of the Dyson-Schwinger equations for the quark propagator on a torus. The temperature dependence of these condensates serves to investigate the interplay between the chiral and deconfinement transitions of quenched QCD.

  20. Phase Transition of DNA Coated Nanogold Networks

    NASA Astrophysics Data System (ADS)

    Kiang, Ching-Hwa; Sun, Young; Harris, Nolan; Wickremasinghe, Nissanka

    2004-03-01

    Melting and hybridization of DNA-coated gold nanoparticle networks are investigated with optical absorption spectroscopy and tansmission electron microscopy. Single-stranded DNA-coated nanogold are linked with complementary, single-stranded linker DNA to form particle networks. Network formation results in a solution color change, which can be used for DNA detection. Compared to free DNA, networked DNA-nanoparticle systems result in a sharp melting transition. Melting curves calculated from percolation theory agree with our experimental results(1). (1) C.-H. Kiang, ``Phase Transition of DNA-Linked Gold Nanoparticles,'' Physica A, 321 (2003) 164--169.

  1. Phase transitions in Pareto optimal complex networks.

    PubMed

    Seoane, Luís F; Solé, Ricard

    2015-09-01

    The organization of interactions in complex systems can be described by networks connecting different units. These graphs are useful representations of the local and global complexity of the underlying systems. The origin of their topological structure can be diverse, resulting from different mechanisms including multiplicative processes and optimization. In spatial networks or in graphs where cost constraints are at work, as it occurs in a plethora of situations from power grids to the wiring of neurons in the brain, optimization plays an important part in shaping their organization. In this paper we study network designs resulting from a Pareto optimization process, where different simultaneous constraints are the targets of selection. We analyze three variations on a problem, finding phase transitions of different kinds. Distinct phases are associated with different arrangements of the connections, but the need of drastic topological changes does not determine the presence or the nature of the phase transitions encountered. Instead, the functions under optimization do play a determinant role. This reinforces the view that phase transitions do not arise from intrinsic properties of a system alone, but from the interplay of that system with its external constraints.

  2. Finite-Size and Composition-Driven Topological Phase Transition in (Bi1–xInx)2Se3Thin Films

    NASA Astrophysics Data System (ADS)

    Salehi, Maryam; Shapourian, Hassan; Koirala, Nikesh; Brahlek, Matthew J.; Moon, Jisoo; Oh, Seongshik

    2016-09-01

    In a topological insulator (TI), if its spin-orbit coupling (SOC) strength is gradually reduced, the TI eventually transforms into a trivial insulator beyond a critical point of SOC, at which point the bulk gap closes: this is the standard description of the topological phase transition (TPT). However, this description of TPT, driven solely by the SOC (or something equivalent) and followed by closing and reopening of the bulk band gap, is valid only for infinite-size samples, and little is known how TPT occurs for finite-size samples. Here, using both systematic transport measurements on interface-engineered(Bi$_{1-x}$In$_x$)$_2$Se$_3$ thin films and theoretical simulations (with animations in Supporting Information) we show that description of TPT in finite-size samples needs to be substantially modified from the conventional picture of TPT due to surface-state hybridization and bulk confinement effects. We also show that the finite-size TPT is composed of two separate transitions, topological-normal transition (TNT) and metal-insulator transition (MIT) by providing a detailed phase diagram in the two-dimensional phase space of sample size and SOC strength.

  3. Finite-Size and Composition-Driven Topological Phase Transition in (Bi1-xInx)2Se3 Thin Films.

    PubMed

    Salehi, Maryam; Shapourian, Hassan; Koirala, Nikesh; Brahlek, Matthew J; Moon, Jisoo; Oh, Seongshik

    2016-09-14

    In a topological insulator (TI), if its spin-orbit coupling (SOC) strength is gradually reduced, the TI eventually transforms into a trivial insulator beyond a critical point of SOC, at which point the bulk gap closes: this is the standard description of the topological phase transition (TPT). However, this description of TPT, driven solely by the SOC (or something equivalent) and followed by closing and reopening of the bulk band gap, is valid only for infinite-size samples, and little is known how TPT occurs for finite-size samples. Here, using both systematic transport measurements on interface-engineered (Bi1-xInx)2Se3 thin films and theoretical simulations (with animations in the Supporting Information), we show that description of TPT in finite-size samples needs to be substantially modified from the conventional picture of TPT due to surface-state hybridization and bulk confinement effects. We also show that the finite-size TPT is composed of two separate transitions, topological-normal transition (TNT) and metal-insulator transition (MIT), by providing a detailed phase diagram in the two-dimensional phase space of sample size and SOC strength.

  4. Finite-Size and Composition-Driven Topological Phase Transition in (Bi1-xInx)2Se3 Thin Films.

    PubMed

    Salehi, Maryam; Shapourian, Hassan; Koirala, Nikesh; Brahlek, Matthew J; Moon, Jisoo; Oh, Seongshik

    2016-09-14

    In a topological insulator (TI), if its spin-orbit coupling (SOC) strength is gradually reduced, the TI eventually transforms into a trivial insulator beyond a critical point of SOC, at which point the bulk gap closes: this is the standard description of the topological phase transition (TPT). However, this description of TPT, driven solely by the SOC (or something equivalent) and followed by closing and reopening of the bulk band gap, is valid only for infinite-size samples, and little is known how TPT occurs for finite-size samples. Here, using both systematic transport measurements on interface-engineered (Bi1-xInx)2Se3 thin films and theoretical simulations (with animations in the Supporting Information), we show that description of TPT in finite-size samples needs to be substantially modified from the conventional picture of TPT due to surface-state hybridization and bulk confinement effects. We also show that the finite-size TPT is composed of two separate transitions, topological-normal transition (TNT) and metal-insulator transition (MIT), by providing a detailed phase diagram in the two-dimensional phase space of sample size and SOC strength. PMID:27558142

  5. Grand canonical Peierls transition in In/Si(111)

    NASA Astrophysics Data System (ADS)

    Jeckelmann, Eric; Sanna, Simone; Schmidt, Wolf Gero; Speiser, Eugen; Esser, Norbert

    2016-06-01

    Starting from a Su-Schrieffer-Heeger-like model inferred from first-principles simulations, we show that the metal-insulator transition in In/Si(111) is a first-order grand canonical Peierls transition in which the substrate acts as an electron reservoir for the wires. This model explains naturally the existence of a metastable metallic phase over a wide temperature range below the critical temperature and the sensitivity of the transition to doping. Raman scattering experiments corroborate the softening of the two Peierls deformation modes close to the transition.

  6. Topological phase transition in layered transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Choe, Duk-Hyun; Sung, Ha-Jun; Chang, Kee Joo

    Despite considerable interests in transition metal dichalcogenides (TMDs), such as MX2 with M = (Mo, W) and X = (S, Se, Te), the physical origin of their topological nature is still in its infancy. The conventional view of topological phase transition (TPT) in TMDs is that the band inversion occurs between the metal d and chalcogen p orbital bands. More precisely, the former is pulled down below the latter. Here we introduce an explicit scheme for analyzing TPT in topological materials and find that the TPT in TMDs is different from the conventional speculation. When the 1T phase undergoes a structural transformation to the 1T' phase in monolayer MX2, the band topology changes from trivial to non-trivial, leading to the TPT. We discuss the exact role of the metal d and chalcogen p orbital bands during the TPT. Our finding would provide clear guidelines for understanding the topological nature not only in TMDs but also in other topological materials yet to be explored.

  7. Phase Transitions in Models of Bird Flocking

    NASA Astrophysics Data System (ADS)

    Christodoulidi, H.; van der Weele, K.; Antonopoulos, Ch. G.; Bountis, T.

    2014-12-01

    The aim of the present paper is to elucidate the transition from collective to random behavior exhibited by various mathematical models of bird flocking. In particular, we compare Vicsek's model [Vicsek et al., Phys. Rev. Lett. 75, 1226-1229 (1995)] with one based on topological considerations. The latter model is found to exhibit a first order phase transition from flocking to decoherence, as the "noise parameter" of the problem is increased, whereas Vicsek's model gives a second order transition. Refining the topological model in such a way that birds are influenced mostly by the birds in front of them, less by the ones at their sides and not at all by those behind them (because they do not see them), we find a behavior that lies in between the two models. Finally, we propose a novel mechanism for preserving the flock's cohesion, without imposing artificial boundary conditions or attractive forces.

  8. Gravitational Waves from a Dark Phase Transition

    NASA Astrophysics Data System (ADS)

    Schwaller, Pedro

    2015-10-01

    In this work, we show that a large class of models with a composite dark sector undergo a strong first order phase transition in the early Universe, which could lead to a detectable gravitational wave signal. We summarize the basic conditions for a strong first order phase transition for SU (N ) dark sectors with nf flavors, calculate the gravitational wave spectrum and show that, depending on the dark confinement scale, it can be detected at eLISA or in pulsar timing array experiments. The gravitational wave signal provides a unique test of the gravitational interactions of a dark sector, and we discuss the complementarity with conventional searches for new dark sectors. The discussion includes the twin Higgs and strongly interacting massive particle models as well as symmetric and asymmetric composite dark matter scenarios.

  9. Gravitational Waves from a Dark Phase Transition.

    PubMed

    Schwaller, Pedro

    2015-10-30

    In this work, we show that a large class of models with a composite dark sector undergo a strong first order phase transition in the early Universe, which could lead to a detectable gravitational wave signal. We summarize the basic conditions for a strong first order phase transition for SU(N) dark sectors with n_{f} flavors, calculate the gravitational wave spectrum and show that, depending on the dark confinement scale, it can be detected at eLISA or in pulsar timing array experiments. The gravitational wave signal provides a unique test of the gravitational interactions of a dark sector, and we discuss the complementarity with conventional searches for new dark sectors. The discussion includes the twin Higgs and strongly interacting massive particle models as well as symmetric and asymmetric composite dark matter scenarios. PMID:26565451

  10. Phase transition in the countdown problem.

    PubMed

    Lacasa, Lucas; Luque, Bartolo

    2012-07-01

    We present a combinatorial decision problem, inspired by the celebrated quiz show called Countdown, that involves the computation of a given target number T from a set of k randomly chosen integers along with a set of arithmetic operations. We find that the probability of winning the game evidences a threshold phenomenon that can be understood in the terms of an algorithmic phase transition as a function of the set size k. Numerical simulations show that such probability sharply transitions from zero to one at some critical value of the control parameter, hence separating the algorithm's parameter space in different phases. We also find that the system is maximally efficient close to the critical point. We derive analytical expressions that match the numerical results for finite size and permit us to extrapolate the behavior in the thermodynamic limit.

  11. Nonequilibrium phase transitions in biomolecular signal transduction

    NASA Astrophysics Data System (ADS)

    Smith, Eric; Krishnamurthy, Supriya; Fontana, Walter; Krakauer, David

    2011-11-01

    We study a mechanism for reliable switching in biomolecular signal-transduction cascades. Steady bistable states are created by system-size cooperative effects in populations of proteins, in spite of the fact that the phosphorylation-state transitions of any molecule, by means of which the switch is implemented, are highly stochastic. The emergence of switching is a nonequilibrium phase transition in an energetically driven, dissipative system described by a master equation. We use operator and functional integral methods from reaction-diffusion theory to solve for the phase structure, noise spectrum, and escape trajectories and first-passage times of a class of minimal models of switches, showing how all critical properties for switch behavior can be computed within a unified framework.

  12. Shock Induced Phase Transitions in Polymeric Nitrogen

    NASA Astrophysics Data System (ADS)

    Mattson, William; Balu, Radhakrishnan

    2011-06-01

    The reported density functional molecular dynamics simulations are of a shock travelling through ~4,000 atoms arranged in the equilibrium cg-N configuration equilibrated at T = 250K, P = 1 atm. Atoms within a small segment of the material given an extra velocity consistent with various desired flyer plate impact velocity. The resulting atomic trajectories show a number of complex behaviors including a phase transition to a previously unseen phase, spontaneous defect formation, and chemical reactions. The stability of the shock and the unusual properties of the above phenomena will be discussed.

  13. Shock Induced Phase Transitions in Polymeric Nitrogen

    NASA Astrophysics Data System (ADS)

    Mattson, William

    2010-03-01

    The reported density functional molecular dynamics simulations are of a shock travelling through ˜4,000 atoms arranged in the equilibrium cg-N configuration equilibrated at T = 250K, P = 1 atm. Atoms within a small segment of the material given an extra velocity consistent with various desired flyer plate impact velocity. The resulting atomic trajectories show a number of complex behaviors including a phase transition to a previously unseen phase, spontaneous defect formation, and chemical reactions. The stability of the shock and the unusual properties of the above phenomena will be discussed.

  14. Structural phase transitions in monolayer molybdenum dichalcogenides

    NASA Astrophysics Data System (ADS)

    Choe, Duk-Hyun; Sung, Ha June; Chang, Kee Joo

    2015-03-01

    The recent discovery of two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) has provided opportunities to develop ultimate thin channel devices. In contrast to graphene, the existence of moderate band gap and strong spin-orbit coupling gives rise to exotic electronic properties which vary with layer thickness, lattice structure, and symmetry. TMDs commonly appear in two structures with distinct symmetries, trigonal prismatic 2H and octahedral 1T phases which are semiconducting and metallic, respectively. In this work, we investigate the structural and electronic properties of monolayer molybdenum dichalcogenides (MoX2, where X = S, Se, Te) through first-principles density functional calculations. We find a tendency that the semiconducting 2H phase is more stable than the metallic 1T phase. We show that a spontaneous symmetry breaking of 1T phase leads to various distorted octahedral (1T') phases, thus inducing a metal-to-semiconductor transition. We discuss the effects of carrier doping on the structural stability and the modification of the electronic structure. This work was supported by the National Research Foundation of Korea (NRF) under Grant No. NRF-2005-0093845 and Samsung Science and Technology Foundation under Grant No. SSTFBA1401-08.

  15. Extracellular ice phase transitions in insects.

    PubMed

    Hawes, T C

    2014-01-01

    At temperatures below their temperature of crystallization (Tc), the extracellular body fluids of insects undergo a phase transition from liquid to solid. Insects that survive the transition to equilibrium (complete freezing of the body fluids) are designated as freeze tolerant. Although this phenomenon has been reported and described in many Insecta, current nomenclature and theory does not clearly delineate between the process of transition (freezing) and the final solid phase itself (the frozen state). Thus freeze tolerant insects are currently, by convention, described in terms of the temperature at which the crystallization of their body fluids is initiated, Tc. In fact, the correct descriptor for insects that tolerate freezing is the temperature of equilibrium freezing, Tef. The process of freezing is itself a separate physical event with unique physiological stresses that are associated with ice growth. Correspondingly there are a number of insects whose physiological cryo-limits are very specifically delineated by this transitional envelope. The distinction also has considerable significance for our understanding of insect cryobiology: firstly, because the ability to manage endogenous ice growth is a fundamental segregator of cryotype; and secondly, because our understanding of internal ice management is still largely nascent.

  16. Topological phase transitions in frustrated magnets

    NASA Astrophysics Data System (ADS)

    Southern, B. W.; Peles, A.

    2006-06-01

    The role of topological excitations in frustrated Heisenberg antiferromagnets between two and three spatial dimensions is considered. In particular, the antiferromagnetic Heisenberg model on a stacked triangular geometry with a finite number of layers is studied using Monte Carlo methods. A phase transition that is purely topological in nature occurs at a finite temperature for all film thicknesses. The results indicate that topological excitations are important for a complete understanding of the critical properties of the model between two and three dimensions.

  17. Phase transitions in planar bilayer membranes.

    PubMed

    White, S H

    1975-02-01

    Temperature-dependent structural changes in planar bilayer membranes formed from glycerol monooleate (GMO) dispersed in various n-alkane solvents (C12-C17) have been studied using precise measurements of specific geometric capacitance (Cg). Cg generally increases as temperature (T) decreases. A change in the slope of Cg(T) occurs between 15 and 18 degrees C for all solvent systems examined. Measurements of the interfacial tension (gamma) of the bulk GMO-alkane dispersions against 0.1 M NaCl show that gamma generally decreases with decreasing temperature. The data can be fitted with two straight lines of different slope which intersect on the average at 17 degrees C. Pagano et al. (1973, Science (Wash. D.C.). 181:557) have shown using calorimetry that GMO has a phase transition at about 15 degrees C. Thus, the changes in Cg and gamma with temperature are likely to result from a GMO phase transition. A second structural change is observed to occur between 5 and 10 degrees C which has not been detected calorimetrically. Calculations of Cg based on various estimates of the hydrocarbon dielectric coefficient (epsilon-b) and/or hydrocarbon thickness (delta-b) leads to models for the structure of the bilayer above and below the phase transition temperature.

  18. Phase Transitions in Model Active Systems

    NASA Astrophysics Data System (ADS)

    Redner, Gabriel S.

    The amazing collective behaviors of active systems such as bird flocks, schools of fish, and colonies of microorganisms have long amazed scientists and laypeople alike. Understanding the physics of such systems is challenging due to their far-from-equilibrium dynamics, as well as the extreme diversity in their ingredients, relevant time- and length-scales, and emergent phenomenology. To make progress, one can categorize active systems by the symmetries of their constituent particles, as well as how activity is expressed. In this work, we examine two categories of active systems, and explore their phase behavior in detail. First, we study systems of self-propelled spherical particles moving in two dimensions. Despite the absence of an aligning interaction, this system displays complex emergent dynamics, including phase separation into a dense active solid and dilute gas. Using simulations and analytic modeling, we quantify the phase diagram and separation kinetics. We show that this nonequilibrium phase transition is analogous to an equilibrium vapor-liquid system, with binodal and spinodal curves and a critical point. We also characterize the dense active solid phase, a unique material which exhibits the structural signatures of a crystalline solid near the crystal-hexatic transition point, as well as anomalous dynamics including superdiffusive motion on intermediate timescales. We also explore the role of interparticle attraction in this system. We demonstrate that attraction drastically changes the phase diagram, which contains two distinct phase-separated regions and is reentrant as a function of propulsion speed. We interpret this complex situation with a simple kinetic model, which builds from the observed microdynamics of individual particles to a full description of the macroscopic phase behavior. We also study active nematics, liquid crystals driven out of equilibrium by energy-dissipating active stresses. The equilibrium nematic state is unstable in these

  19. Phase transitions in complex network dynamics

    NASA Astrophysics Data System (ADS)

    Squires, Shane

    Two phase transitions in complex networks are analyzed. The first of these is a percolation transition, in which the network develops a macroscopic connected component as edges are added to it. Recent work has shown that if edges are added "competitively" to an undirected network, the onset of percolation is abrupt or "explosive." A new variant of explosive percolation is introduced here for directed networks, whose critical behavior is explored using numerical simulations and finite-size scaling theory. This process is also characterized by a very rapid percolation transition, but it is not as sudden as in undirected networks. The second phase transition considered here is the emergence of instability in Boolean networks, a class of dynamical systems that are widely used to model gene regulation. The dynamics, which are determined by the network topology and a set of update rules, may be either stable or unstable, meaning that small perturbations to the state of the network either die out or grow to become macroscopic. Here, this transition is analytically mapped onto a well-studied percolation problem, which can be used to predict the average steady-state distance between perturbed and unperturbed trajectories. This map applies to specific Boolean networks with few restrictions on network topology, but can only be applied to two commonly used types of update rules. Finally, a method is introduced for predicting the stability of Boolean networks with a much broader range of update rules. The network is assumed to have a given complex topology, subject only to a locally tree-like condition, and the update rules may be correlated with topological features of the network. While past work has addressed the separate effects of topology and update rules on stability, the present results are the first widely applicable approach to studying how these effects interact. Numerical simulations agree with the theory and show that such correlations between topology and update

  20. Phase transitions of ɛ-HNIW in compound systems

    NASA Astrophysics Data System (ADS)

    Zhang, Jing-yuan; Guo, Xue-yong; Jiao, Qing-jie; Zhang, Pu

    2016-05-01

    The heat-induced phase transitions of ɛ-HNIW, both neat and coated with various additives used in plastic bonded explosives, were investigated using powder X-ray diffraction and differential scanning calorimetry. It was found that ɛ-HNIW, after being held at 70°C for 60h, remained in the ɛ-phase. Applying other conditions, various phase transition parameters were determined, including Tc (the critical phase transition temperature), T50 (the temperature at which 50% of the phase transition is complete) and T180 (the percentage of γ-HNIW present in samples heated to 180°C). According to the above three parameters, additives were divided into three categories: those that delay phase transition, those that raise the critical temperature and the transition rate, and those that promote the phase transition. Based on the above data, a phase transition mechanism is proposed.

  1. Transitional Bubble in Periodic Flow Phase Shift

    NASA Technical Reports Server (NTRS)

    Talan, M.; Hourmouziadis, Jean

    2004-01-01

    One particular characteristic observed in unsteady shear layers is the phase shift relative to the main flow. In attached boundary layers this will have an effect both on the instantaneous skin friction and heat transfer. In separation bubbles the contribution to the drag is dominated by the pressure distribution. However, the most significant effect appears to be the phase shift on the transition process. Unsteady transition behaviour may determine the bursting of the bubble resulting in an un-recoverable full separation. An early analysis of the phase shift was performed by Stokes for the incompressible boundary layer of an oscillating wall and an oscillating main flow. An amplitude overshoot within the shear layer as well as a phase shift were observed that can be attributed to the relatively slow diffusion of viscous stresses compared to the fast change of pressure. Experiments in a low speed facility with the boundary layer of a flat plate were evaluated in respect to phase shift. A pressure distribution similar to that on the suction surface of a turbomachinery aerofoil was superimposed generating a typical transitional separation bubble. A periodically unsteady main flow in the suction type wind tunnel was introduced via a rotating flap downstream of the test section. The experiments covered a range of the three similarity parameters of momentum-loss-thickness Reynolds-number of 92 to 226 and Strouhal-number (reduced frequency) of 0.0001 to 0.0004 at the separation point, and an amplitude range up to 19 %. The free stream turbulence level was less than 1% .Upstream of the separation point the phase shift in the laminar boundary layer does not appear to be affected significantly bay either of the three parameters. The trend perpendicular to the wall is similar to the Stokes analysis. The problem scales well with the wave velocity introduced by Stokes, however, the lag of the main flow near the wall is less than indicated analytically. The separation point

  2. Exploiting phase transitions for fusion optimization problems

    NASA Astrophysics Data System (ADS)

    Svenson, Pontus

    2005-05-01

    Many optimization problems that arise in multi-target tracking and fusion applications are known to be NP-complete, ie, believed to have worst-case complexities that are exponential in problem size. Recently, many such NP-complete problems have been shown to display threshold phenomena: it is possible to define a parameter such that the probability of a random problem instance having a solution jumps from 1 to 0 at a specific value of the parameter. It is also found that the amount of resources needed to solve the problem instance peaks at the transition point. Among the problems found to display this behavior are graph coloring (aka clustering, relevant for multi-target tracking), satisfiability (which occurs in resource allocation and planning problem), and the travelling salesperson problem. Physicists studying these problems have found intriguing similarities to phase transitions in spin models of statistical mechanics. Many methods previously used to analyze spin glasses have been used to explain some of the properties of the behavior at the transition point. It turns out that the transition happens because the fitness landscape of the problem changes as the parameter is varied. Some algorithms have been introduced that exploit this knowledge of the structure of the fitness landscape. In this paper, we review some of the experimental and theoretical work on threshold phenomena in optimization problems and indicate how optimization problems from tracking and sensor resource allocation could be analyzed using these results.

  3. A method to characterize the dielectric and interfacial properties of metal-insulator-semiconductor structures by microwave measurement

    NASA Astrophysics Data System (ADS)

    Lue, Hang-Ting; Tseng, Tseung-Yuen; Huang, Guo-Wei

    2002-04-01

    We have developed a method to investigate the dielectric and interfacial properties of gate dielectric thin films by microwave measurement. Ba0.5Sr0.5TiO3 (BST) thin films were deposited on 10 Ω cm (normal) and 10 k Ω cm [high-resistivity, (HR)] silicon substrates at the same time by rf magnetron sputtering. For the BST/HR-silicon, coplanar waveguides (CPW) were fabricated and measured at microwave frequencies with thru-reflect-line calibration while capacitance (C-V) measurements were carried out for BST/normal silicon. From the phase change of CPW transmission line and the maximum capacitance in C-V measurement, the dielectric constants of both the BST thin film and interface layer can be determined. Furthermore, the behaviors of insertion loss versus bias voltage were investigated. The results indicate that our method can provide useful information to study the dielectric and interfacial properties of metal-insulator-semiconductor structures.

  4. Phase transitions of Dirac electrons in bismuth.

    PubMed

    Li, Lu; Checkelsky, J G; Hor, Y S; Uher, C; Hebard, A F; Cava, R J; Ong, N P

    2008-07-25

    The Dirac Hamiltonian, which successfully describes relativistic fermions, applies equally well to electrons in solids with linear energy dispersion, for example, in bismuth and graphene. A characteristic of these materials is that a magnetic field less than 10 tesla suffices to force the Dirac electrons into the lowest Landau level, with resultant strong enhancement of the Coulomb interaction energy. Moreover, the Dirac electrons usually come with multiple flavors or valley degeneracy. These ingredients favor transitions to a collective state with novel quantum properties in large field. By using torque magnetometry, we have investigated the magnetization of bismuth to fields of 31 tesla. We report the observation of sharp field-induced phase transitions into a state with striking magnetic anisotropy, consistent with the breaking of the threefold valley degeneracy. PMID:18653888

  5. Dynamical phase transitions in quantum mechanics

    NASA Astrophysics Data System (ADS)

    Rotter, Ingrid

    2012-02-01

    The nucleus is described as an open many-body quantum system with a non-Hermitian Hamilton operator the eigenvalues of which are complex, in general. The eigenvalues may cross in the complex plane (exceptional points), the phases of the eigenfunctions are not rigid in approaching the crossing points and the widths bifurcate. By varying only one parameter, the eigenvalue trajectories usually avoid crossing and width bifurcation occurs at the critical value of avoided crossing. An analog spectroscopic redistribution takes place for discrete states below the particle decay threshold. By this means, a dynamical phase transition occurs in the many-level system starting at a critical value of the level density. Hence the properties of the low-lying nuclear states (described well by the shell model) and those of highly excited nuclear states (described by random ensembles) differ fundamentally from one another. The statement of Niels Bohr on the collective features of compound nucleus states at high level density is therefore not in contradiction to the shell-model description of nuclear (and atomic) states at low level density. Dynamical phase transitions are observed experimentally in different quantum mechanical systems by varying one or two parameters.

  6. Topological Phase Transition without Gap Closing

    PubMed Central

    Ezawa, Motohiko; Tanaka, Yukio; Nagaosa, Naoto

    2013-01-01

    Topological phase transition is accompanied with a change of topological numbers. According to the bulk-edge correspondence, the gap closing and the breakdown of the adiabaticity are necessary at the phase transition point to make the topological number ill-defined. However, the gap closing is not always needed. In this paper, we show that two topological distinct phases can be continuously connected without gap closing, provided the symmetry of the system changes during the process. Here we propose the generic principles how this is possible by demonstrating various examples such as 1D polyacetylene with the charge-density-wave order, 2D silicene with the antiferromagnetic order, 2D silicene or quantum well made of HgTe with superconducting proximity effects and 3D superconductor Cu doped Bi2Se3. It is argued that such an unusual phenomenon can occur when we detour around the gap closing point provided the connection of the topological numbers is lost along the detour path. PMID:24071900

  7. Phase transitions of nuclear matter beyond mean field theory

    SciTech Connect

    Tran Huu Phat; Nguyen Tuan Anh; Nguyen Van Long; Le Viet Hoa

    2007-10-15

    The Cornwall-Jackiw-Tomboulis (CJT) effective action approach is applied to study the phase transition of nuclear matter modeled by the four-nucleon interaction. It is shown that in the Hartree-Fock approximation (HFA) a first-order phase transition takes place at low temperature, whereas the phase transition is of second order at higher temperature.

  8. Jahn-Teller solitons, structural phase transitions, and phase separation.

    PubMed

    Clougherty, Dennis P

    2006-02-01

    It is demonstrated that under common conditions a molecular solid subject to Jahn-Teller interactions supports stable Q-ball-like nontopological solitons. Such solitons represent a localized lump of excess electric charge in periodic motion accompanied by a time-dependent shape distortion of a set of adjacent molecules. The motion of the distortion can correspond to a true rotation or to a pseudorotation about the symmetric shape configuration. These solitons are stable for Jahn-Teller coupling strengths below a critical value; however, as the Jahn-Teller coupling approaches this critical value, the size of the soliton diverges signaling an incipient structural phase transition. The soliton phase mimics features commonly attributed to phase separation in complex solids. PMID:16486846

  9. Jahn-Teller Solitons, Structural Phase Transitions, and Phase Separation

    NASA Astrophysics Data System (ADS)

    Clougherty, Dennis P.

    2006-02-01

    It is demonstrated that under common conditions a molecular solid subject to Jahn-Teller interactions supports stable Q-ball-like nontopological solitons. Such solitons represent a localized lump of excess electric charge in periodic motion accompanied by a time-dependent shape distortion of a set of adjacent molecules. The motion of the distortion can correspond to a true rotation or to a pseudorotation about the symmetric shape configuration. These solitons are stable for Jahn-Teller coupling strengths below a critical value; however, as the Jahn-Teller coupling approaches this critical value, the size of the soliton diverges signaling an incipient structural phase transition. The soliton phase mimics features commonly attributed to phase separation in complex solids.

  10. Swarms, phase transitions, and collective intelligence

    SciTech Connect

    Millonas, M.M.

    1992-12-31

    A model of the collective behavior of a large number of locally acting organisms is proposed. The model is intended to be realistic, but turns out to fit naturally into the category of connectionist models, Like all connectionist models, its properties can be divided into the categories of structure, dynamics, and learning. The space in which the organisms move is discretized, and is modeled by a lattice of nodes, or cells. Each cell hag a specified volume, and is connected to other cells in the space in a definite way. Organisms move probabilistically between local cells in this space, but with weights dependent on local morphogenic substances, or morphogens. The morphogens are in turn are effected by the passage of an organism. The evolution of the morphogens, and the corresponding constitutes of the organisms constitutes the collective behavior of the group. The generic properties of such systems are analyzed, and a number of results are obtained. The model has various types of phase transitions and self-organizing properties controlled both by the level of the noise, and other parameters. It is hoped that the present mode; might serve as a paradigmatic example of a complex cooperative system in nature. In particular this model can be used to explore the relation of phase transitions to at least three important issues encountered in artificial life. Firstly, that of emergence as complex adaptive behavior. Secondly, as an exploration of second order phase transitions in biological systems. Lastly, to derive behavioral criteria for the evolution of collective behavior in social organisms. The model is then applied to the specific case of ants moving on a lattice. The local behavior of the ants is inspired by the actual behavior observed in the laboratory, and analytic results for the collective behavior are compared to the corresponding laboratory results. Monte carlo simulations are used as illustrations.

  11. Swarms, phase transitions, and collective intelligence

    SciTech Connect

    Millonas, M.M. . Dept. of Physics)

    1992-01-01

    A model of the collective behavior of a large number of locally acting organisms is proposed. The model is intended to be realistic, but turns out to fit naturally into the category of connectionist models, Like all connectionist models, its properties can be divided into the categories of structure, dynamics, and learning. The space in which the organisms move is discretized, and is modeled by a lattice of nodes, or cells. Each cell hag a specified volume, and is connected to other cells in the space in a definite way. Organisms move probabilistically between local cells in this space, but with weights dependent on local morphogenic substances, or morphogens. The morphogens are in turn are effected by the passage of an organism. The evolution of the morphogens, and the corresponding constitutes of the organisms constitutes the collective behavior of the group. The generic properties of such systems are analyzed, and a number of results are obtained. The model has various types of phase transitions and self-organizing properties controlled both by the level of the noise, and other parameters. It is hoped that the present mode; might serve as a paradigmatic example of a complex cooperative system in nature. In particular this model can be used to explore the relation of phase transitions to at least three important issues encountered in artificial life. Firstly, that of emergence as complex adaptive behavior. Secondly, as an exploration of second order phase transitions in biological systems. Lastly, to derive behavioral criteria for the evolution of collective behavior in social organisms. The model is then applied to the specific case of ants moving on a lattice. The local behavior of the ants is inspired by the actual behavior observed in the laboratory, and analytic results for the collective behavior are compared to the corresponding laboratory results. Monte carlo simulations are used as illustrations.

  12. Phase Transitions and Domain Structures in Nanoferroelectrics.

    NASA Astrophysics Data System (ADS)

    Levanyuk, Arkadi

    2006-03-01

    A review of the Landau-type theory of size effects in ferroelectric phase transitions will be presented. An aspect of this theory, a question about the ``critical thickness'' of ferroelectric thin films will be the main emphasis. This question can be reduced to that of the size dependence of temperature of ferroelectric phase transition by taking into account two possibilities for such a transition: formation of (i) single- or (ii) multi-domain ferroelectric state. In a defect-free sample, two factors would define which of these possibilities is realized: the depolarizing field and the specific features of the sample surface reflected in the boundary conditions for the Landau-type equations in addition to the conventional electrodynamics boundary conditions. The possibility of the transition into the single domain state strongly depends on a character of electrodes and the additional boundary conditions, while it is much less important for the multi-domain case. In realistic conditions, the transition would proceed into the multi-domain state, especially in near cubic ferroelectrics, e.g. films of cubic perovskites with an elastic mismatch between the film and a substrate. Importantly, the shift of a transition temperature with respect to a bulk is relatively small in this case. The message is that, while studying the question about the ``critical thickness'', multi-domain states rather than single domain ones should be considered first of all, contrary to the approach in some recent papers where only monodomain state was studied.. In particular, there is no definite indication of ultimate ``critical thickness'' for a multi domain ferroelectric state in nearly cubic samples. Along with ultra thin films the ferroelectric nanopowders are also intensively studied now. Here the size effects are more complicated because of long-range interaction between the particles. The problems which the theory faces here are briefly commented upon. It is worth mentioning that

  13. Evolutionary Phase Transitions in Random Environments.

    PubMed

    Skanata, Antun; Kussell, Edo

    2016-07-15

    We present analytical results for long-term growth rates of structured populations in randomly fluctuating environments, which we apply to predict how cellular response networks evolve. We show that networks which respond rapidly to a stimulus will evolve phenotypic memory exclusively under random (i.e., nonperiodic) environments. We identify the evolutionary phase diagram for simple response networks, which we show can exhibit both continuous and discontinuous transitions. Our approach enables exact analysis of diverse evolutionary systems, from viral epidemics to emergence of drug resistance. PMID:27472146

  14. Quantum coherence and quantum phase transitions

    NASA Astrophysics Data System (ADS)

    Li, Yan-Chao; Lin, Hai-Qing

    2016-05-01

    We study the connections between local quantum coherence (LQC) based on Wigner-Yanase skew information and quantum phase transitions (QPTs). When applied on the one-dimensional Hubbard, XY spin chain with three-spin interaction, and Su-Schrieffer-Heeger models, the LQC and its derivatives are used successfully to detect different types of QPTs in these spin and fermionic systems. Furthermore, the LQC is effective as the quantum discord (QD) in detecting QPTs at finite temperatures, where the entanglement has lost its effectiveness. We also demonstrate that the LQC can exhibit different behaviors in many forms compared with the QD.

  15. Chiral phase transition from string theory.

    PubMed

    Parnachev, Andrei; Sahakyan, David A

    2006-09-15

    The low energy dynamics of a certain D-brane configuration in string theory is described at weak t'Hooft coupling by a nonlocal version of the Nambu-Jona-Lasinio model. We study this system at finite temperature and strong t'Hooft coupling, using the string theory dual. We show that for sufficiently low temperatures chiral symmetry is broken, while for temperatures larger then the critical value, it gets restored. We compute the latent heat and observe that the phase transition is of the first order.

  16. Berry phase transition in twisted bilayer graphene

    NASA Astrophysics Data System (ADS)

    Rode, Johannes C.; Smirnov, Dmitri; Schmidt, Hennrik; Haug, Rolf J.

    2016-09-01

    The electronic dispersion of a graphene bilayer is highly dependent on rotational mismatch between layers and can be further manipulated by electrical gating. This allows for an unprecedented control over electronic properties and opens up the possibility of flexible band structure engineering. Here we present novel magnetotransport data in a twisted bilayer, crossing the energetic border between decoupled monolayers and coupled bilayer. In addition a transition in Berry phase between π and 2π is observed at intermediate magnetic fields. Analysis of Fermi velocities and gate induced charge carrier densities suggests an important role of strong layer asymmetry for the observed phenomena.

  17. Symmetry considerations in structural phase transitions

    NASA Astrophysics Data System (ADS)

    Perez-Mato, J. M.; Aroyo, M. I.; Orobengoa, D.

    2012-03-01

    The most important symmetry arguments to be considered in the analysis of structural phase transitions are reviewed. A practical approach is used, with the discussion of many examples. In particular, we stress the straightforward application of computer tools freely available in internet to solve these symmetry-related problems. We focus on programs available on the Bilbao Crystallographic Server (www.cryst.ehu.es), but also the use of some programs from the ISOTROPY site (http://stokes.byu.edu/isotropy.html) is discussed.

  18. Dependence of phase transitions on small changes

    NASA Astrophysics Data System (ADS)

    Stoop, R.

    1993-06-01

    In this contribution, the generalized thermodynamic formalism is applied to a nonhyperbolic dynamical system in two comparable situations. The change from one situation to the other is small in the sense that the grammar and the singularities of the system are preserved. For the discussion of the effects generated by this change, the generalized entropy functions are calculated and the sets of the specific scaling functions which reflect the phase transition of the system are investigated. It is found that even under mild variations, this set is not invariant.

  19. Evolutionary Phase Transitions in Random Environments

    NASA Astrophysics Data System (ADS)

    Skanata, Antun; Kussell, Edo

    2016-07-01

    We present analytical results for long-term growth rates of structured populations in randomly fluctuating environments, which we apply to predict how cellular response networks evolve. We show that networks which respond rapidly to a stimulus will evolve phenotypic memory exclusively under random (i.e., nonperiodic) environments. We identify the evolutionary phase diagram for simple response networks, which we show can exhibit both continuous and discontinuous transitions. Our approach enables exact analysis of diverse evolutionary systems, from viral epidemics to emergence of drug resistance.

  20. Two interacting charged particles in an Aharonov-Bohm ring: Bound state transitions, symmetry breaking, persistent currents, and Berry's phase

    SciTech Connect

    Moulopoulos, Konstantinos; Constantinou, Martha

    2004-12-15

    By using a Green's function procedure we determine exactly the energy spectrum and the associated eigenstates of a system of two oppositely charged particles interacting through a contact potential and moving in a one-dimensional ring threaded by a magnetic flux. Critical interactions for the appearance of bound states are analytically determined and are viewed as limiting cases of many-body results from the area of interaction-induced metal-insulator transitions in charged quantal mixtures. Analytical expressions on one-body probability and charge current densities for this overall neutral system are derived and their single-valuedness leads to the possibility of states with broken symmetry, with possible experimental signatures in exciton spectra. Persistent currents are analytically determined and their properties investigated from the point of view of an interacting mesoscopic system. A cyclic adiabatic process on the interaction potential is also identified, with the associated Berry's phase directly linked to the electric (persistent) currents, the probability currents having no contribution for a neutral system.

  1. Phase transitions in fluids and biological systems

    NASA Astrophysics Data System (ADS)

    Sipos, Maksim

    metric to 16S rRNA metagenomic studies of 6 vertebrate gastrointestinal microbiomes and find that they assembled through a highly non-neutral process. I then consider a phase transition that may occur in nutrient-poor environments such as ocean surface waters. In these systems, I find that the experimentally observed genome streamlining, specialization and opportunism may well be generic statistical phenomena.

  2. Nuclear Binding Near a Quantum Phase Transition

    NASA Astrophysics Data System (ADS)

    Elhatisari, Serdar; Li, Ning; Rokash, Alexander; Alarcón, Jose Manuel; Du, Dechuan; Klein, Nico; Lu, Bing-nan; Meißner, Ulf-G.; Epelbaum, Evgeny; Krebs, Hermann; Lähde, Timo A.; Lee, Dean; Rupak, Gautam

    2016-09-01

    How do protons and neutrons bind to form nuclei? This is the central question of ab initio nuclear structure theory. While the answer may seem as simple as the fact that nuclear forces are attractive, the full story is more complex and interesting. In this work we present numerical evidence from ab initio lattice simulations showing that nature is near a quantum phase transition, a zero-temperature transition driven by quantum fluctuations. Using lattice effective field theory, we perform Monte Carlo simulations for systems with up to twenty nucleons. For even and equal numbers of protons and neutrons, we discover a first-order transition at zero temperature from a Bose-condensed gas of alpha particles (4He nuclei) to a nuclear liquid. Whether one has an alpha-particle gas or nuclear liquid is determined by the strength of the alpha-alpha interactions, and we show that the alpha-alpha interactions depend on the strength and locality of the nucleon-nucleon interactions. This insight should be useful in improving calculations of nuclear structure and important astrophysical reactions involving alpha capture on nuclei. Our findings also provide a tool to probe the structure of alpha cluster states such as the Hoyle state responsible for the production of carbon in red giant stars and point to a connection between nuclear states and the universal physics of bosons at large scattering length.

  3. Phase Transitions of Single Semistiff Polymer Chains

    NASA Astrophysics Data System (ADS)

    Bastolla, Ugo; Grassberger, Peter

    1997-12-01

    We study numerically a lattice model of semiflexible homopolymers with nearest neighbor (nn) attraction and energetic preference for straight joints between bonded monomers. For this we use a new Monte Carlo algorithm, the “prunedenriched Rosenbluth Method” (PERM). It is very efficient both for relatively open configurations at high temperatures and for compact and frozen-in low- T states. This allows us to study in detail the phase diagram as a function of nn attraction ɛ and stiffness x. It shows a θ-collapse line with a transition from open coils (small ɛ) to molten compact globules (large ɛ) and a freezing transition toward a state with orientational global order (large stiffness x). Qualitatively this is similar to a recently studied mean-field theory [S. Doniach, T. Garel, and H. Orland (1996), J. Chem. Phys. 105(4), 1601], but there are important differences in details. In contrast to the mean-field theory and to naive expectations, the θ-temperature increases with stiffness x. The freezing temperature increases even faster, and reaches the θ-line at a finite value of x. For even stiffer chains, the freezing transition takes place directly, without the formation of an intermediate globular state. Although being in conflict with mean-field theory, the latter had been conjectured already by Doniach et al. on the basis of heuristic arguments and of low-statistics Monte Carlo simulations. Finally, we discuss the relevance of the present model as a very crude model for protein folding.

  4. Phase transition in the ABC model.

    PubMed

    Clincy, M; Derrida, B; Evans, M R

    2003-06-01

    Recent studies have shown that one-dimensional driven systems can exhibit phase separation even if the dynamics is governed by local rules. The ABC model, which comprises three particle species that diffuse asymmetrically around a ring, shows anomalous coarsening into a phase separated steady state. In the limiting case in which the dynamics is symmetric and the parameter q describing the asymmetry tends to one, no phase separation occurs and the steady state of the system is disordered. In the present work, we consider the weak asymmetry regime q=exp(-beta/N), where N is the system size, and study how the disordered state is approached. In the case of equal densities, we find that the system exhibits a second-order phase transition at some nonzero beta(c). The value of beta(c)=2pi square root 3 and the optimal profiles can be obtained by writing the exact large deviation functional. For nonequal densities, we write down mean-field equations and analyze some of their predictions. PMID:16241312

  5. Phase transitions in Thirring’s model

    NASA Astrophysics Data System (ADS)

    Campa, Alessandro; Casetti, Lapo; Latella, Ivan; Pérez-Madrid, Agustín; Ruffo, Stefano

    2016-07-01

    In his pioneering work on negative specific heat, Walter Thirring introduced a model that is solvable in the microcanonical ensemble. Here, we give a complete description of the phase-diagram of this model in both the microcanonical and the canonical ensemble, highlighting the main features of ensemble inequivalence. In both ensembles, we find a line of first-order phase transitions which ends in a critical point. However, neither the line nor the point have the same location in the phase-diagram of the two ensembles. We also show that the microcanonical and canonical critical points can be analytically related to each other using a Landau expansion of entropy and free energy, respectively, in analogy with what has been done in (Cohen and Mukamel 2012 J. Stat. Mech. P12017). Examples of systems with certain symmetries restricting the Landau expansion have been considered in this reference, while no such restrictions are present in Thirring’s model. This leads to a phase diagram that can be seen as a prototype for what happens in systems of particles with kinematic degrees of freedom dominated by long-range interactions.

  6. Photoinduced topological phase transition in epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Zhai, Xuechao; Jin, Guojun

    2014-06-01

    In epitaxial graphene irradiated by an off-resonance circularly polarized light, we demonstrate a phase transition taking place between the band insulator and Floquet topological insulator. Considering the competition between staggered sublattice potential and photon dressing, we derive the dynamical energy gap and phase diagram in the tight-binding approximation. It is found that a threshold value of light intensity is necessary to realize a Floquet topological insulator. At the phase boundary, for each set of parameters, there is a special state with only one valley that is Dirac cone gapless, but the other remains gapped; in the band insulating phase, only one valley provides low-energy electrons, and it could be switched to the other by reversing the polarization direction of light. From these results, two electronic devices are designed: one is an optical-sensing np junction, where the photodriven unusual intervalley tunneling exhibits a stronger detectable signal than the intravalley tunneling, and the other is a topological field-effect transistor, where polarized light is used to turn on or turn off a nonequilibrium current.

  7. Phase transitions and doping in semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Sahu, Ayaskanta

    impurities (or doping) allows further control over the electrical and optical properties of nanocrystals. However, while impurity doping in bulk semiconductors is now routine, doping of nanocrystals remains challenging. In particular, evidence for electronic doping, in which additional electrical carriers are introduced into the nanocrystals, has been very limited. Here, we adopt a new approach to electronic doping of nanocrystals. We utilize a partial cation exchange to introduce silver impurities into cadmium selenide (CdSe) and lead selenide (PbSe) nanocrystals. Results indicate that the silver-doped CdSe nanocrystals show a significant increase in fluorescence intensity, as compared to pure CdSe nanocrystals. We also observe a switching from n- to p-type doping in the silver-doped CdSe nanocrystals with increased silver amounts. Moreover, the silver-doping results in a change in the conductance of both PbSe and CdSe nanocrystals and the magnitude of this change depends on the amount of silver incorporated into the nanocrystals. In the bulk, silver chalcogenides (Ag2E, E=S, Se, and Te) possess a wide array of intriguing properties, including superionic conductivity. In addition, they undergo a reversible temperature-dependent phase transition which induces significant changes in their electronic and ionic properties. While most of these properties have been examined extensively in bulk, very few studies have been conducted at the nanoscale. We have recently developed a versatile synthesis that yields colloidal silver chalcogenide nanocrystals. Here, we study the size dependence of their phase-transition temperatures. We utilize differential scanning calorimetry and in-situ X-ray diffraction analyses to observe the phase transition in nanocrystal assemblies. We observe a significant deviation from the bulk alpha (low-temperature) to beta (high-temperature) phase-transition temperature when we reduce their size to a few nanometers. Hence, these nanocrystals provide great

  8. Gravitational waves from the electroweak phase transition

    SciTech Connect

    Leitao, Leonardo; Mégevand, Ariel; Sánchez, Alejandro D. E-mail: megevand@mdp.edu.ar

    2012-10-01

    We study the generation of gravitational waves in the electroweak phase transition. We consider a few extensions of the Standard Model, namely, the addition of scalar singlets, the minimal supersymmetric extension, and the addition of TeV fermions. For each model we consider the complete dynamics of the phase transition. In particular, we estimate the friction force acting on bubble walls, and we take into account the fact that they can propagate either as detonations or as deflagrations preceded by shock fronts, or they can run away. We compute the peak frequency and peak intensity of the gravitational radiation generated by bubble collisions and turbulence. We discuss the detectability by proposed spaceborne detectors. For the models we considered, runaway walls require significant fine tuning of the parameters, and the gravitational wave signal from bubble collisions is generally much weaker than that from turbulence. Although the predicted signal is in most cases rather low for the sensitivity of LISA, models with strongly coupled extra scalars reach this sensitivity for frequencies f ∼ 10{sup −4} Hz, and give intensities as high as h{sup 2}Ω{sub GW} ∼ 10{sup −8}.

  9. Stress induced phase transitions in silicon

    NASA Astrophysics Data System (ADS)

    Budnitzki, M.; Kuna, M.

    2016-10-01

    Silicon has a tremendous importance as an electronic, structural and optical material. Modeling the interaction of a silicon surface with a pointed asperity at room temperature is a major step towards the understanding of various phenomena related to brittle as well as ductile regime machining of this semiconductor. If subjected to pressure or contact loading, silicon undergoes a series of stress-driven phase transitions accompanied by large volume changes. In order to understand the material's response for complex non-hydrostatic loading situations, dedicated constitutive models are required. While a significant body of literature exists for the dislocation dominated high-temperature deformation regime, the constitutive laws used for the technologically relevant rapid low-temperature loading have severe limitations, as they do not account for the relevant phase transitions. We developed a novel finite deformation constitutive model set within the framework of thermodynamics with internal variables that captures the stress induced semiconductor-to-metal (cd-Si → β-Si), metal-to-amorphous (β-Si → a-Si) as well as amorphous-to-amorphous (a-Si → hda-Si, hda-Si → a-Si) transitions. The model parameters were identified in part directly from diamond anvil cell data and in part from instrumented indentation by the solution of an inverse problem. The constitutive model was verified by successfully predicting the transformation stress under uniaxial compression and load-displacement curves for different indenters for single loading-unloading cycles as well as repeated indentation. To the authors' knowledge this is the first constitutive model that is able to adequately describe cyclic indentation in silicon.

  10. Phase transitions in supercritical explosive percolation

    NASA Astrophysics Data System (ADS)

    Chen, Wei; Nagler, Jan; Cheng, Xueqi; Jin, Xiaolong; Shen, Huawei; Zheng, Zhiming; D'Souza, Raissa M.

    2013-05-01

    Percolation describes the sudden emergence of large-scale connectivity as edges are added to a lattice or random network. In the Bohman-Frieze-Wormald model (BFW) of percolation, edges sampled from a random graph are considered individually and either added to the graph or rejected provided that the fraction of accepted edges is never smaller than a decreasing function with asymptotic value of α, a constant. The BFW process has been studied as a model system for investigating the underlying mechanisms leading to discontinuous phase transitions in percolation. Here we focus on the regime α∈[0.6,0.95] where it is known that only one giant component, denoted C1, initially appears at the discontinuous phase transition. We show that at some point in the supercritical regime C1 stops growing and eventually a second giant component, denoted C2, emerges in a continuous percolation transition. The delay between the emergence of C1 and C2 and their asymptotic sizes both depend on the value of α and we establish by several techniques that there exists a bifurcation point αc=0.763±0.002. For α∈[0.6,αc), C1 stops growing the instant it emerges and the delay between the emergence of C1 and C2 decreases with increasing α. For α∈(αc,0.95], in contrast, C1 continues growing into the supercritical regime and the delay between the emergence of C1 and C2 increases with increasing α. As we show, αc marks the minimal delay possible between the emergence of C1 and C2 (i.e., the smallest edge density for which C2 can exist). We also establish many features of the continuous percolation of C2 including scaling exponents and relations.

  11. Preon model and cosmological quantum-hyperchromodynamic phase transition

    SciTech Connect

    Nishimura, H.; Hayashi, Y.

    1987-05-15

    From the cosmological viewpoint, we investigate whether or not recent preon models are compatible with the picture of the first-order phase transition from the preon phase to the composite quark-lepton phase. It is shown that the current models accepting the 't Hooft anomaly-matching condition together with quantum hyperchromodynamics are consistent with the cosmological first-order phase transition.

  12. Preon model and cosmological quantum-hyperchromodynamic phase transition

    NASA Astrophysics Data System (ADS)

    Nishimura, H.; Hayashi, Y.

    1987-05-01

    From the cosmological viewpoint, we investigate whether or not recent preon models are compatible with the picture of the first-order phase transition from the preon phase to the composite quark-lepton phase. It is shown that the current models accepting the 't Hooft anomaly-matching condition together with quantum hyperchromodynamics are consistent with the cosmological first-order phase transition.

  13. Phase transitions and morphologies of aerosol particles

    NASA Astrophysics Data System (ADS)

    Song, M.; Marcolli, C.; Krieger, U.; Zuend, A.; Peter, T.

    2012-12-01

    Tropospheric aerosol particles consisting of complex mixtures of organic compounds, ammonium sulfate (AS) and water undergo phase transitions such as liquid-liquid phase separation (LLPS), efflorescence and deliquescence as a consequence of changes in ambient relative humidity (RH). These phase transitions in the mixed aerosol particles may lead to different particle configurations such as core-shell or partially engulfed structures. However, the physical states and morphologies of these aerosol particles are still poorly understood. In this study, we investigate the phase transitions and morphological changes of various internally mixed organics/AS/water particles with different organic-to-inorganic ratios (OIR), namely OIR = 6:1, 2:1, 1:2 and 1:6 during humidity cycles using optical microscopy and Raman spectroscopy. Particularly, we explore how the properties of different organic functional groups and the compositional complexity of the organic aerosol fraction influence the occurrence of LLPS in the relationship with the organic oxygen-to-carbon (O:C) ratios. We found that LLPS occurred for all mixtures with O:C < 0.56, for none of the mixtures with O:C > 0.80, and depended on the specific types and compositions of organic functional groups for 0.56 < O:C < 0.80. Moreover, the number of mixture components and the spread of the O:C range did not notably influence the conditions for LLPS to occur. Since in ambient aerosols O:C and OIR range typically between 0.2 and 1.0, and between 4:1 and 1:5, respectively, LLPS is expected to be a common feature of tropospheric aerosols. AS in the mixed particles effloresced between 0 and 47 %RH and deliquesced between 71 and 80 %RH during humidity cycles. Compared to a deliquescence relative humidity (DRH) of 80 % for pure AS, the DRH in the mixed particles showed slightly lower values. A strong reduction or complete inhibition of efflorescence occurred for mixtures with high OIR that did not exhibit LLPS. Both core-shell and

  14. Does sex induce a phase transition?

    NASA Astrophysics Data System (ADS)

    de Oliveira, P. M. C.; Moss de Oliveira, S.; Stauffer, D.; Cebrat, S.; Pękalski, A.

    2008-05-01

    We discovered a dynamic phase transition induced by sexual reproduction. The dynamics is a pure Darwinian rule applied to diploid bit-strings with both fundamental ingredients to drive Darwin's evolution: (1) random mutations and crossings which act in the sense of increasing the entropy (or diversity); and (2) selection which acts in the opposite sense by limiting the entropy explosion. Selection wins this competition if mutations performed at birth are few enough, and thus the wild genotype dominates the steady-state population. By slowly increasing the average number m of mutations, however, the population suddenly undergoes a mutational degradation precisely at a transition point mc. Above this point, the “bad” alleles (represented by 1-bits) spread over the genetic pool of the population, overcoming the selection pressure. Individuals become selectively alike, and evolution stops. Only below this point, m < mc, evolutionary life is possible. The finite-size-scaling behaviour of this transition is exhibited for large enough “chromosome” lengths L, through lengthy computer simulations. One important and surprising observation is the L-independence of the transition curves, for large L. They are also independent on the population size. Another is that mc is near unity, i.e. life cannot be stable with much more than one mutation per diploid genome, independent of the chromosome length, in agreement with reality. One possible consequence is that an eventual evolutionary jump towards larger L enabling the storage of more genetic information would demand an improved DNA copying machinery in order to keep the same total number of mutations per offspring.

  15. Quark-hadron phase transition in massive gravity

    NASA Astrophysics Data System (ADS)

    Atazadeh, K.

    2016-11-01

    We study the quark-hadron phase transition in the framework of massive gravity. We show that the modification of the FRW cosmological equations leads to the quark-hadron phase transition in the early massive Universe. Using numerical analysis, we consider that a phase transition based on the chiral symmetry breaking after the electroweak transition, occurred at approximately 10 μs after the Big Bang to convert a plasma of free quarks and gluons into hadrons.

  16. Weyl semimetals and topological phase transitions

    NASA Astrophysics Data System (ADS)

    Murakami, Shuichi

    Weyl semimetals are semimetals with nondegenerate 3D Dirac cones in the bulk. We showed that in a transition between different Z2 topological phases, i.e. between the normal insulator (NI) and topological insulator (TI), the Weyl semimetal phase necessarily appears when inversion symmetry is broken. In the presentation we show that this scenario holds for materials with any space groups without inversion symmetry. Namely, let us take any band insulator without inversion symmetry, and assume that the gap is closed by a change of an external parameter. In such cases we found that the system runs either into (i) a Weyl semimetal or (ii) a nodal-line semimetal, but no insulator-to-insulator transition happens. This is confirmed by classifying the gap closing in terms of the space groups and the wavevector. In the case (i), the number of Weyl nodes produced at the gap closing ranges from 2 to 12 depending on the symmetry. In (ii) the nodal line is protected by mirror symmetry. In the presentation, we explain some Weyl semimetal and nodal-line semimetals which we find by using this classification. As an example, we explain our result on ab initio calculation on tellurium (Te). Tellurium consists of helical chains, and therefore lacks inversion and mirror symmetries. At high pressure the band gap of Te decreases and finally it runs into a Weyl semimetal phase, as confirmed by our ab initio calculation. In such chiral systems as tellurium, we also theoretically propose chiral transport in systems with such helical structures; namely, an orbital magnetization is induced by a current along the chiral axis, in analogy with a solenoid.

  17. High-pressure phase transitions of strontianite

    NASA Astrophysics Data System (ADS)

    Speziale, S.; Biedermann, N.; Reichmann, H. J.; Koch-Mueller, M.; Heide, G.

    2015-12-01

    Strontianite (SrCO3) is isostructural to aragonite, a major high-pressure polymorph of calcite. Thus it is a material of interest to investigate the high-pressure phase behavior of aragonite-group minerals. SrCO3 is a common component of natural carbonates and knowing its physical properties at high pressures is necessary to properly model the thermodynamic properties of complex carbonates, which are major crustal minerals but are also present in the deep Earth [Brenker et al., 2007] and control carbon cycling in the Earth's mantle. The few available high-pressure studies of SrCO3 disagree regarding both pressure stability and structure of the post-aragonite phase [Lin & Liu, 1997; Ono et al., 2005; Wang et al. 2015]. To clarify such controversies we investigated the high-pressure behavior of synthetic SrCO3 by Raman spectroscopy. Using a diamond anvil cell we compressed single-crystals or powder of strontianite (synthesized at 4 GPa and 1273 K for 24h in a multi anvil apparatus), and measured Raman scattering up to 78 GPa. SrCO3 presents a complex high-pressure behavior. We observe mode softening above 20 GPa and a phase transition at 25 - 26.9 GPa, which we interpret due to the CO3 groups rotation, in agreement with Lin & Liu [1997]. The lattice modes in the high-pressure phase show dramatic changes which may indicate a change from 9-fold coordinated Sr to a 12-fold-coordination [Ono, 2007]. Our results confirm that the high-pressure phase of strontianite is compatible with Pmmn symmetry. References Brenker, F.E. et al. (2007) Earth and Planet. Sci. Lett., 260, 1; Lin, C.-C. & Liu, L.-G. (1997) J. Phys. Chem. Solids, 58, 977; Ono, S. et al. (2005) Phys. Chem. Minerals, 32, 8; Ono, S. (2007) Phys. Chem. Minerals, 34, 215; Wang, M. et al. (2015) Phys Chem Minerals 42, 517.

  18. Symmetry Relationship and Strain-Induced Transitions between Insulating M1 and M2 and Metallic R phases of Vanadium Dioxide

    SciTech Connect

    Tselev, A.; Luk’yanchuk, I.A.; Ivanov, I.N.; Budai, J.D.; Tischler, J.Z.; Strelcov, E.; Kolmakov, A.; Kalinin, S.V.

    2010-12-07

    The ability to synthesize VO{sub 2} in the form of single-crystalline nanobeams and nano- and microcrystals uncovered a number of previously unknown aspects of the metal-insulator transition (MIT) in this oxide. In particular, several reports demonstrated that the MIT can proceed through competition between two monoclinic (insulating) phases M1 and M2 and the tetragonal (metallic) R phase under influence of strain. The nature of such phase behavior has been not identified. Here we show that the competition between M1 and M2 phases is purely lattice-symmetry-driven. Within the framework of the Ginzburg-Landau formalism, both M phases correspond to different directions of the same four-component structural order parameter, and as a consequence, the M2 phase can appear under a small perturbation of the M1 structure such as doping or stress. We analyze the strain-controlled phase diagram of VO{sub 2} in the vicinity of the R-M2-M1 triple point using the Ginzburg-Landau formalism and identify and experimentally verify the pathways for strain-control of the transition. These insights open the door toward more systematic approaches to synthesis of VO{sub 2} nanostructures in desired phase states and to use of external fields in the control of the VO{sub 2} phase states. Additionally, we report observation of the triclinic T phase at the heterophase domain boundaries in strained quasi-two-dimensional VO{sub 2} nanoplatelets, and theoretically predict phases that have not been previously observed.

  19. Phase transitions in biogenic amorphous calcium carbonate

    NASA Astrophysics Data System (ADS)

    Gong, Yutao

    Geological calcium carbonate exists in both crystalline phases and amorphous phases. Compared with crystalline calcium carbonate, such as calcite, aragonite and vaterite, the amorphous calcium carbonate (ACC) is unstable. Unlike geological calcium carbonate crystals, crystalline sea urchin spicules (99.9 wt % calcium carbonate and 0.1 wt % proteins) do not present facets. To explain this property, crystal formation via amorphous precursors was proposed in theory. And previous research reported experimental evidence of ACC on the surface of forming sea urchin spicules. By using X-ray absorption near-edge structure (XANES) spectroscopy and photoelectron emission microscopy (PEEM), we studied cross-sections of fresh sea urchin spicules at different stages (36h, 48h and 72h after fertilization) and observed the transition sequence of three mineral phases: hydrated ACC → dehydrated ACC → biogenic calcite. In addition, we unexpectedly found hydrated ACC nanoparticles that are surrounded by biogenic calcite. This observation indicates the dehydration from hydrated ACC to dehydrated ACC is inhibited, resulting in stabilization of hydrated ACC nanoparticles. We thought that the dehydration was inhibited by protein matrix components occluded within the biomineral, and we designed an in vitro assay to test the hypothesis. By utilizing XANES-PEEM, we found that SM50, the most abundant occluded matrix protein in sea urchin spicules, has the function to stabilize hydrated ACC in vitro.

  20. QCD PHASE TRANSITIONS-VOLUME 15.

    SciTech Connect

    SCHAFER,T.

    1998-11-04

    The title of the workshop, ''The QCD Phase Transitions'', in fact happened to be too narrow for its real contents. It would be more accurate to say that it was devoted to different phases of QCD and QCD-related gauge theories, with strong emphasis on discussion of the underlying non-perturbative mechanisms which manifest themselves as all those phases. Before we go to specifics, let us emphasize one important aspect of the present status of non-perturbative Quantum Field Theory in general. It remains true that its studies do not get attention proportional to the intellectual challenge they deserve, and that the theorists working on it remain very fragmented. The efforts to create Theory of Everything including Quantum Gravity have attracted the lion share of attention and young talent. Nevertheless, in the last few years there was also a tremendous progress and even some shift of attention toward emphasis on the unity of non-perturbative phenomena. For example, we have seen some. efforts to connect the lessons from recent progress in Supersymmetric theories with that in QCD, as derived from phenomenology and lattice. Another example is Maldacena conjecture and related development, which connect three things together, string theory, super-gravity and the (N=4) supersymmetric gauge theory. Although the progress mentioned is remarkable by itself, if we would listen to each other more we may have chance to strengthen the field and reach better understanding of the spectacular non-perturbative physics.

  1. Phase transitions in femtosecond laser ablation

    NASA Astrophysics Data System (ADS)

    Povarnitsyn, Mikhail E.; Khishchenko, Konstantin V.; Levashov, Pavel R.

    2009-03-01

    In this study we simulate an interaction of femtosecond laser pulses (100 fs, 800 nm, 0.1-10 J/cm 2) with metal targets of Al, Au, Cu, and Ni. For analysis of laser-induced phase transitions, melting and shock waves propagation as well as material decomposition we use an Eulerian hydrocode in conjunction with a thermodynamically complete two-temperature equation of state with stable and metastable phases. Isochoric heating, material evaporation from the free surface of the target and fast propagation of the melting and shock waves are observed. On rarefaction the liquid phase becomes metastable and its lifetime is estimated using the theory of homogeneous nucleation. Mechanical spallation of the target material at high strain rates is also possible as a result of void growth and confluence. In our simulation several ablation mechanisms are taken into account but the main issue of the material is found to originate from the metastable liquid state. It can be decomposed either into a liquid-gas mixture in the vicinity of the critical point, or into droplets at high strain rates and negative pressure. The simulation results are in agreement with available experimental findings.

  2. Scaling theory of topological phase transitions.

    PubMed

    Chen, Wei

    2016-02-10

    Topologically ordered systems are characterized by topological invariants that are often calculated from the momentum space integration of a certain function that represents the curvature of the many-body state. The curvature function may be Berry curvature, Berry connection, or other quantities depending on the system. Akin to stretching a messy string to reveal the number of knots it contains, a scaling procedure is proposed for the curvature function in inversion symmetric systems, from which the topological phase transition can be identified from the flow of the driving energy parameters that control the topology (hopping, chemical potential, etc) under scaling. At an infinitesimal operation, one obtains the renormalization group (RG) equations for the driving energy parameters. A length scale defined from the curvature function near the gap-closing momentum is suggested to characterize the scale invariance at critical points and fixed points, and displays a universal critical behavior in a variety of systems examined. PMID:26790004

  3. MAGNETIC FIELDS FROM QCD PHASE TRANSITIONS

    SciTech Connect

    Tevzadze, Alexander G.; Kisslinger, Leonard; Kahniashvili, Tina; Brandenburg, Axel

    2012-11-01

    We study the evolution of QCD phase transition-generated magnetic fields (MFs) in freely decaying MHD turbulence of the expanding universe. We consider an MF generation model that starts from basic non-perturbative QCD theory and predicts stochastic MFs with an amplitude of the order of 0.02 {mu}G and small magnetic helicity. We employ direct numerical simulations to model the MHD turbulence decay and identify two different regimes: a 'weakly helical' turbulence regime, when magnetic helicity increases during decay, and 'fully helical' turbulence, when maximal magnetic helicity is reached and an inverse cascade develops. The results of our analysis show that in the most optimistic scenario the magnetic correlation length in the comoving frame can reach 10 kpc with the amplitude of the effective MF being 0.007 nG. We demonstrate that the considered model of magnetogenesis can provide the seed MF for galaxies and clusters.

  4. Scaling theory of topological phase transitions.

    PubMed

    Chen, Wei

    2016-02-10

    Topologically ordered systems are characterized by topological invariants that are often calculated from the momentum space integration of a certain function that represents the curvature of the many-body state. The curvature function may be Berry curvature, Berry connection, or other quantities depending on the system. Akin to stretching a messy string to reveal the number of knots it contains, a scaling procedure is proposed for the curvature function in inversion symmetric systems, from which the topological phase transition can be identified from the flow of the driving energy parameters that control the topology (hopping, chemical potential, etc) under scaling. At an infinitesimal operation, one obtains the renormalization group (RG) equations for the driving energy parameters. A length scale defined from the curvature function near the gap-closing momentum is suggested to characterize the scale invariance at critical points and fixed points, and displays a universal critical behavior in a variety of systems examined.

  5. Phase transitions in Hidden Markov Models

    NASA Astrophysics Data System (ADS)

    Bechhoefer, John; Lathouwers, Emma

    In Hidden Markov Models (HMMs), a Markov process is not directly accessible. In the simplest case, a two-state Markov model ``emits'' one of two ``symbols'' at each time step. We can think of these symbols as noisy measurements of the underlying state. With some probability, the symbol implies that the system is in one state when it is actually in the other. The ability to judge which state the system is in sets the efficiency of a Maxwell demon that observes state fluctuations in order to extract heat from a coupled reservoir. The state-inference problem is to infer the underlying state from such noisy measurements at each time step. We show that there can be a phase transition in such measurements: for measurement error rates below a certain threshold, the inferred state always matches the observation. For higher error rates, there can be continuous or discontinuous transitions to situations where keeping a memory of past observations improves the state estimate. We can partly understand this behavior by mapping the HMM onto a 1d random-field Ising model at zero temperature. We also present more recent work that explores a larger parameter space and more states. Research funded by NSERC, Canada.

  6. Phase Transitions in Networks of Memristive Elements

    NASA Astrophysics Data System (ADS)

    Sheldon, Forrest; di Ventra, Massimiliano

    The memory features of memristive elements (resistors with memory), analogous to those found in biological synapses, have spurred the development of neuromorphic systems based on them (see, e.g.,). In turn, this requires a fundamental understanding of the collective dynamics of networks of memristive systems. Here, we study an experimentally-inspired model of disordered memristive networks in the limit of a slowly ramped voltage and show through simulations that these networks undergo a first-order phase transition in the conductivity for sufficiently high values of memory, as quantified by the memristive ON/OFF ratio. We provide also a mean-field theory that reproduces many features of the transition and particularly examine the role of boundary conditions and current- vs. voltage-controlled networks. The dynamics of the mean-field theory suggest a distribution of conductance jumps which may be accessible experimentally. We finally discuss the ability of these networks to support massively-parallel computation. Work supported in part by the Center for Memory and Recording Research at UCSD.

  7. Pressure-induced phase transition in CrO2.

    PubMed

    Alptekin, Sebahaddin

    2015-12-01

    The ab initio constant pressure molecular dynamics technique and density functional theory with generalized gradient approximation (GGA) was used to study the pressure-induced phase transition of CrO2. The phase transition of the rutile (P42/mnm) to the orthorhombic CaCl2 (Pnnm) structure at 30 GPa was determined successfully in a constant pressure simulation. This phase transition was analyzed from total energy calculations and, from the enthalpy calculation, occurred at around 17 GPa. Structural properties such as bulk modules, lattice parameters and phase transition were compared with experimental results. The phase transition at 12 ± 3 GPa was in good agreement with experimental results, as was the phase transition from the orthorhombic CaCl2 (Pnnm) to the monoclinic (P21/c) structure also found at 35 GPa.

  8. Main phase transitions in supported lipid single-bilayer.

    PubMed

    Charrier, A; Thibaudau, F

    2005-08-01

    We have studied the phase transitions of a phospholipidic single-bilayer supported on a mica substrate by real-time temperature-controlled atomic force microscopy. We show the existence of two phase transitions in this bilayer that we attribute to two gel (L(beta))/fluid (L(alpha)) transitions, corresponding to the independent melting of each leaflet of the bilayer. The ratio of each phase with temperature and the large broadening of the transitions' widths have been interpreted through a basic thermodynamic framework in which the surface tension varies during the transitions. The experimental data can be fit with such a model using known thermodynamic parameters. PMID:15879467

  9. Gravitational waves from global second order phase transitions

    SciTech Connect

    Jr, John T. Giblin; Price, Larry R.; Siemens, Xavier; Vlcek, Brian E-mail: larryp@caltech.edu E-mail: bvlcek@uwm.edu

    2012-11-01

    Global second-order phase transitions are expected to produce scale-invariant gravitational wave spectra. In this manuscript we explore the dynamics of a symmetry-breaking phase transition using lattice simulations. We explicitly calculate the stochastic gravitational wave background produced during the transition and subsequent self-ordering phase. We comment on this signal as it compares to the scale-invariant spectrum produced during inflation.

  10. Flexible perovskite solar cells based on the metal-insulator-semiconductor structure.

    PubMed

    Wei, Jing; Li, Heng; Zhao, Yicheng; Zhou, Wenke; Fu, Rui; Pan, Huiyue; Zhao, Qing

    2016-09-14

    The metal-insulator-semiconductor (MIS) structure is applied to perovskite solar cells, in which the traditional compact layer TiO2 is replaced by Al2O3 as the hole blocking material to realize an all-low-temperature process. Flexible devices based on this structure are also realized with excellent flexibility, which hold 85% of their initial efficiency after bending 100 times. PMID:27524362

  11. Novel Way to Characterize Metal-Insulator-Metal Devices via Nanoindentation: Preprint

    SciTech Connect

    Periasamy, P.; Packard, C. E.; O?Hayre, R. P.; Berry, J. J.; Parilla, P. A.; Ginley, D. S.

    2011-07-01

    Metal-Insulator-Metal (MIM) devices are crucial components for applications ranging from optical rectennas for harvesting sunlight to infrared detectors. To date, the relationship between materials properties and device performance in MIM devices is not fully understood, partly due to the difficulty in making and reproducing reliable devices. One configuration that is popular due to its simplicity and ease of fabrication is the point-contact diode where a metal tip serves as one of the metals in the MIM device. The intrinsic advantage of the point-contact configuration is that it is possible to achieve very small contact areas for the device thereby allowing very high-frequency operation. In this study, precise control over the contact area and penetration depth of an electrically conductive tip into a metal/insulator combination is achieved using a nanoindenter with in-situ electrical contact resistance measurement capabilities. A diamond probe tip, doped (degeneratively) with boron for conductivity, serves as the point contact and second 'metal' (b-Diamond) of the MIM diode. The base layer consists of Nb/Nb2O5 thin films on Si substrates and serves as the first metal /insulator combination of the MIM structure. The current-voltage response of the diodes is measured under a range of conditions to assess the validity and repeatability of the technique. Additionally, we compare the results of this technique to those acquired using a bent-wire approach and find that Nb/Nb2O5/b-Diamond MIM devices show an excellent asymmetry (60-300) and nonlinearity values (~6-9). This technique shows great promise for screening metal-insulator combinations for performance without the uncertainty that stems from a typical bent-wire point-contact.

  12. Excited state quantum phase transitions in many-body systems

    SciTech Connect

    Caprio, M.A. Cejnar, P.; Iachello, F.

    2008-05-15

    Phenomena analogous to ground state quantum phase transitions have recently been noted to occur among states throughout the excitation spectra of certain many-body models. These excited state phase transitions are manifested as simultaneous singularities in the eigenvalue spectrum (including the gap or level density), order parameters, and wave function properties. In this article, the characteristics of excited state quantum phase transitions are investigated. The finite-size scaling behavior is determined at the mean-field level. It is found that excited state quantum phase transitions are universal to two-level bosonic and fermionic models with pairing interactions.

  13. Mixed Bose-Fermi Mott Phases and Phase Transitions

    NASA Astrophysics Data System (ADS)

    Altman, Ehud

    2012-02-01

    A recent experiment with an ultra-cold mixture of ^174Yb and ^173Yb atoms in an optical lattice [S. Sugawa e. al. Nature Physics 7, 642 (2011)] found a remarkable quantum phase that can be described as a mixed Mott insulator. Such a an incompressible state established at integer combined filling of the two species, must have residual low energy Fermionic degrees of freedom associated with relative motion of the two species. I will discuss the novel quantum states formed by the composite Fermions in the mixed Mott insulator as well as the unconventional phase transitions separating these states from the compressible Bose-Fermi mixture established at weak interactions. Finally I will propose to utilize the mixed Mott insulator as a quantum simulator for models of the doped Mott insulator relevant to high Tc superconductivity. The new approach, where the bosonic atoms play the role of doped holes offers significant advantages over direct simulation of the Hubbard model. In particular the mixed Mott plateau naturally provides a flat trap potential to the doped holes, while the hole doping is easily tuned by varying the relative fraction of the bosons.

  14. Pressure induced phase transitions in ceramic compounds containing tetragonal zirconia

    SciTech Connect

    Sparks, R.G.; Pfeiffer, G.; Paesler, M.A.

    1988-12-01

    Stabilized tetragonal zirconia compounds exhibit a transformation toughening process in which stress applied to the material induces a crystallographic phase transition. The phase transition is accompanied by a volume expansion in the stressed region thereby dissipating stress and increasing the fracture strength of the material. The hydrostatic component of the stress required to induce the phase transition can be investigated by the use of a high pressure technique in combination with Micro-Raman spectroscopy. The intensity of Raman lines characteristic for the crystallographic phases can be used to calculate the amount of material that has undergone the transition as a function of pressure. It was found that pressures on the order of 2-5 kBar were sufficient to produce an almost complete transition from the original tetragonal to the less dense monoclinic phase; while a further increase in pressure caused a gradual reversal of the transition back to the original tetragonal structure.

  15. Phononic Crystal Tunable via Ferroelectric Phase Transition

    NASA Astrophysics Data System (ADS)

    Xu, Chaowei; Cai, Feiyan; Xie, Shuhong; Li, Fei; Sun, Rong; Fu, Xianzhu; Xiong, Rengen; Zhang, Yi; Zheng, Hairong; Li, Jiangyu

    2015-09-01

    Phononic crystals (PCs) consisting of periodic materials with different acoustic properties have potential applications in functional devices. To realize more smart functions, it is desirable to actively control the properties of PCs on demand, ideally within the same fabricated system. Here, we report a tunable PC made of Ba0.7Sr0.3Ti O3 (BST) ceramics, wherein a 20-K temperature change near room temperature results in a 20% frequency shift in the transmission spectra induced by a ferroelectric phase transition. The tunability phenomenon is attributed to the structure-induced resonant excitation of A0 and A1 Lamb modes that exist intrinsically in the uniform BST plate, while these Lamb modes are sensitive to the elastic properties of the plate and can be modulated by temperature in a BST plate around the Curie temperature. The study finds opportunities for creating tunable PCs and enables smart temperature-tuned devices such as the Lamb wave filter or sensor.

  16. Reentrant phase transition in granular superconductors

    NASA Astrophysics Data System (ADS)

    Fazekas, Patrik

    1982-09-01

    The conditions for the appearance of a reentrant superconducting phase in granular materials are studied in mean field approximation applied to periodic models. We assume that the relevant low-lying excitation is the transfer of a Cooper pair from a grain to one of its neighbours, and neglect pair breaking. Both on-grain ( U) and nearest neighbour ( V) Coulomb interactions are taken into account, and the Coulomb problem is treated in Bethe-Peierls approximation. When V/U is not too large, reentrance is predicted if V/U>(4+3 z)-1/2 where z is the coordination number. This result is different from a recent criterion suggested by Šimánek, which allows reentrance only in the immediate vicinities of certain discrete values of V/U. For strong enough V/U, the models treated here show a transition to an ionic-salt-like charge-ordered state. Reentrant superconductivity is shown to occur also on an ionic background. In actual systems, close-packing effects partially frustrate the ionic ordering and enhance the reentrant feature.

  17. Phase transitions in models of human cooperation

    NASA Astrophysics Data System (ADS)

    Perc, Matjaž

    2016-08-01

    If only the fittest survive, why should one cooperate? Why should one sacrifice personal benefits for the common good? Recent research indicates that a comprehensive answer to such questions requires that we look beyond the individual and focus on the collective behavior that emerges as a result of the interactions among individuals, groups, and societies. Although undoubtedly driven also by culture and cognition, human cooperation is just as well an emergent, collective phenomenon in a complex system. Nonequilibrium statistical physics, in particular the collective behavior of interacting particles near phase transitions, has already been recognized as very valuable for understanding counterintuitive evolutionary outcomes. However, unlike pairwise interactions among particles that typically govern solid-state physics systems, interactions among humans often involve group interactions, and they also involve a larger number of possible states even for the most simplified description of reality. Here we briefly review research done in the realm of the public goods game, and we outline future research directions with an emphasis on merging the most recent advances in the social sciences with methods of nonequilibrium statistical physics. By having a firm theoretical grip on human cooperation, we can hope to engineer better social systems and develop more efficient policies for a sustainable and better future.

  18. Quantum phase transitions and local magnetism in Mott insulators: A local probe investigation using muons, neutrons, and photons

    NASA Astrophysics Data System (ADS)

    Frandsen, Benjamin A.

    destroyed at the quantum phase transition. Taken together, these findings point unambiguously to a first-order quantum phase transition in these systems. We also conducted x-ray and neutron PDF experiments, which suggest that the distinct atomic structures associated with the insulating and metallic phases similarly coexist near the quantum phase transition. These results have significant implications for our understanding of the Mott metal-insulator quantum phase transition in real materials. The second part of this thesis centers on the derivation and development of the magnetic pair distribution function (mPDF) technique and its application to the antiferromagnetic Mott insulator MnO. The atomic PDF method involves Fourier transforming the x-ray or neutron total scattering intensity from reciprocal space into real space to directly reveal the local atomic correlations in a material, which may deviate significantly from the average crystallographic structure of that material. Likewise, the mPDF method involves Fourier transforming the magnetic neutron total scattering intensity to probe the local correlations of magnetic moments in the material, which may exist on short length scales even when the material has no long-range magnetic order. After deriving the fundamental mPDF equations and providing a proof-of-principle by recovering the known magnetic structure of antiferromagnetic MnO, we used this technique to investigate the short-range magnetic correlations that persist well into the paramagnetic phase of MnO. By combining the mPDF measurements with ab initio calculations of the spin-spin correlation function in paramagnetic MnO, we were able to quantitatively account for the observed mPDF. We also used the mPDF data to evaluate competing ab initio theories, thereby resolving some longstanding questions about the magnetic exchange interactions in MnO.

  19. Interplay between micelle formation and waterlike phase transitions

    NASA Astrophysics Data System (ADS)

    Heinzelmann, G.; Figueiredo, W.; Girardi, M.

    2010-02-01

    A lattice model for amphiphilic aggregation in the presence of a structured waterlike solvent is studied through Monte Carlo simulations. We investigate the interplay between the micelle formation and the solvent phase transition in two different regions of temperature-density phase diagram of pure water. A second order phase transition between the gaseous (G) and high density liquid (HDL) phases that occurs at very high temperatures, and a first order phase transition between the low density liquid (LDL) and (HDL) phases that takes place at lower temperatures. In both cases, we find the aggregate size distribution curve and the critical micellar concentration as a function of the solvent density across the transitions. We show that micelle formation drives the LDL-HDL first order phase transition to lower solvent densities, while the transition G-HDL is driven to higher densities, which can be explained by the markedly different degrees of micellization in both cases. The diffusion coefficient of surfactants was also calculated in the LDL and HDL phases, changing abruptly its behavior due to the restructuring of waterlike solvent when we cross the first order LDL-HDL phase transition. To understand such behavior, we calculate the solvent density and the number of hydrogen bonds per water molecule close to micelles. The curves of the interfacial solvent density and the number of hydrogen bonds per water molecule in the first hydration signal a local phase change of the interfacial water, clarifying the diffusion mechanism of free surfactants in the solvent.

  20. Strain glass state as the boundary of two phase transitions

    PubMed Central

    Zhou, Zhijian; Cui, Jian; Ren, Xiaobing

    2015-01-01

    A strain glass state was found to be located between B2-B19’ (cubic to monoclinic) phase transition and B2-R (cubic to rhombohedral) phase transition in Ti49Ni51 alloys after aging process. After a short time aging, strong strain glass transition was observed, because the size of the precipitates is small, which means the strain field induced by the precipitates is isotropic and point-defect-like, and the distribution of the precipitates is random. After a long time aging, the average size of the precipitates increases. The strong strain field induced by the precipitates around them forces the symmetry of the matrix materials to conform to the symmetry of the crystalline structure of the precipitates, which results in the new phase transition. The experiment shows that there exists no well-defined boundary in the evolution from the strain glass transition to the new phase transition. Due to its generality, this glass mediated phase transition divergence scheme can be applied to other proper material systems to induce a more important new phase transition path, which can be useful in the field of phase transition engineering. PMID:26307500

  1. Studies of structures and phase transitions in pyrrhotite

    SciTech Connect

    Li, F.

    1997-03-31

    This report contains a general introduction, the experimental section, general conclusions, and two appendices: using projection operators to construct the basis functions and the magnetic transition of bulk pyrrhotite samples in the low-temperature range. Four chapters have been removed for separate processing. They are: From pyrrhotite to troilite: An application of the Landau theory of phase transitions; Phase transition in near stoichiometric iron sulfide; A ordering, incommensuration and phase transitions in pyrrhotite. Part 1: A TEM study of Fe{sub 7}S{sub 8}; and Part 2: A high-temperature X-ray powder diffraction and thermomagnetic study.

  2. Nuclear Liquid-Gas Phase Transition: Experimental Signals

    NASA Astrophysics Data System (ADS)

    D'Agostino, M.; Bruno, M.; Gulminelli, F.; Cannata, F.; Chomaz, Ph.; Casini, G.; Geraci, E.; Gramegna, F.; Moroni, A.; Vannini, G.

    2005-03-01

    The connection between the thermodynamics of charged finite nuclear systems and the asymptotically measured partitions in heavy ion collisions is discussed. Different independent signals compatible with a liquid-to-gas-like phase transition are reported. In particular abnormally large fluctuations in the measured observables are presented as a strong evidence of a first order phase transition with negative heat capacity.

  3. Phase transitions for rotational states within an algebraic cluster model

    NASA Astrophysics Data System (ADS)

    López Moreno, E.; Morales Hernández, G. E.; Hess, P. O.; Yépez Martínez, H.

    2016-07-01

    The ground state and excited, rotational phase transitions are investigated within the Semimicroscopic Algebraic Cluster Model (SACM). The catastrophe theory is used to describe these phase transitions. Short introductions to the SACM and the catastrophe theory are given. We apply the formalism to the case of 16O+α→20Ne.

  4. Diamagnetic phase transitions in two-dimensional conductors

    NASA Astrophysics Data System (ADS)

    Bakaleinikov, L. A.; Gordon, A.

    2014-11-01

    A theory describing the susceptibility amplitude and the magnetic induction bifurcation near the dHvA driven diamagnetic phase transitions in quasi two-dimensional (2D) organic conductors of the (ET)2X with X=Cu(NCS)2, KHg(SCN)4, I3, AuBr2, IBr2, etc. is presented. We show that there is a drastic increase in the temperature and magnetic field dependence of the susceptibility amplitude on approaching the diamagnetic phase transition point. Near the phase transition point the temperature and magnetic field dependences are fitted by the ones typical of the mean-field phase transition theory. These dependences confirm the long-range character of the magnetic interactions among the conduction electrons leading to diamagnetic phase transitions. We demonstrate that the magnetic induction splitting of nuclear magnetic resonance (NMR) and muon spin-rotation spectroscopy (μSR) lines due to two Condon domains decreases tending to zero on approaching the diamagnetic phase transition. This decrease is fitted by the temperature and magnetic field dependence of the susceptibility characteristic of the mean-field theory of phase transitions. Performing new susceptibility, NMR and μSR experiments will enable to detect diamagnetic phase transitions and Condon domains in quasi 2D metals.

  5. Experimental and theoretical investigations on shock wave induced phase transitions

    NASA Astrophysics Data System (ADS)

    Gupta, Satish C.; Sikka, S. K.

    2001-06-01

    Shock wave loading of a material can cause variety of phase transitions, like polymorphism, amorphization, metallization and molecular dissociations. As the shocked state lasts only for a very short duration (about a few microseconds or less), in-situ microscopic measurements are very difficult. Although such studies are beginning to be possible, most of the shock-induced phase transitions are detected using macroscopic measurements. The microscopic nature of the transition is then inferred from comparison with static pressure data or interpreted by theoretical methods. For irreversible phase transitions, microscopic measurements on recovered samples, together with orientation relations determined from selected area electron diffraction and examination of the morphology of growth of the new phase can provide insight into mechanism of phase transitions. On theoretical side, the current ab initio band structure techniques based on density functional formalism provide capability for accurate computation of the small energy differences (a few mRy or smaller) between different plausible structures. Total energy calculation along the path of a phase transition can furnish estimates of activation barrier, which has implications for understanding kinetics of phase transitions. Molecular dynamics calculations, where the new structure evolves naturally, are becoming increasingly popular especially for understanding crystal to amorphous phase transitions. Illustrations from work at our laboratory will be presented.

  6. Pressure-induced phase transitions and metallization in VO2

    NASA Astrophysics Data System (ADS)

    Bai, Ligang; Li, Quan; Corr, Serena A.; Meng, Yue; Park, Changyong; Sinogeikin, Stanislav V.; Ko, Changhyun; Wu, Junqiao; Shen, Guoyin

    2015-03-01

    We report the results of pressure-induced phase transitions and metallization in VO2 based on synchrotron x-ray diffraction, electrical resistivity, and Raman spectroscopy. Our isothermal compression experiments at room temperature and 383 K show that the room temperature monoclinic phase (M 1 ,P 21/c ) and the high-temperature rutile phase (R ,P 42/m n m ) of VO2 undergo phase transitions to a distorted M 1 monoclinic phase (M 1' ,P 21/c ) above 13.0 GPa and to an orthorhombic phase (CaCl2-like, P n n m ) above 13.7 GPa, respectively. Upon further compression, both high-pressure phases transform into a new phase (phase X ) above 34.3 and 38.3 GPa at room temperature and 383 K, respectively. The room temperature M 1 -M 1' phase transition structurally resembles the R -CaCl2 phase transition at 383 K, suggesting a second-order displacive type of transition. Contrary to previous studies, our electrical resistivity results, Raman measurements, as well as ab initio calculations indicate that the new phase X , rather than the M 1' phase, is responsible for the metallization under pressure. The metallization mechanism is discussed based on the proposed crystal structure.

  7. Phase transitions and domain structures in multiferroics

    NASA Astrophysics Data System (ADS)

    Vlahos, Eftihia

    2011-12-01

    Thin film ferroelectrics and multiferroics are two important classes of materials interesting both from a scientific and a technological prospective. The volatility of lead and bismuth as well as environmental issues regarding the toxicity of lead are two disadvantages of the most commonly used ferroelectric random access memory (FeRAM) materials such as Pb(Zr,Ti)O3 and SrBi2Ta2O9. Therefore lead-free thin film ferroelectrics are promising substitutes as long as (a) they can be grown on technologically important substrates such as silicon, and (b) their T c and Pr become comparable to that of well established ferroelectrics. On the other hand, the development of functional room temperature ferroelectric ferromagnetic multiferroics could lead to very interesting phenomena such as control of magnetism with electric fields and control of electrical polarization with magnetic fields. This thesis focuses on the understanding of material structure-property relations using nonlinear optical spectroscopy. Nonlinear spectroscopy is an excellent tool for probing the onset of ferroelectricity, and domain dynamics in strained ferroelectrics and multiferroics. Second harmonic generation was used to detect ferroelectricity and the antiferrodistortive phase transition in thin film SrTiO3. Incipient ferroelectric CaTiO3 has been shown to become ferroelectric when strained with a combination of SHG and dielectric measurements. The tensorial nature of the induced nonlinear polarization allows for probing of the BaTiO3 and SrTiO3 polarization contributions in nanoscale BaTiO3/SrTiO3 superlattices. In addition, nonlinear optics was used to demonstrate ferroelectricity in multiferroic EuTiO3. Finally, confocal SHG and Raman microscopy were utilized to visualize polar domains in incipient ferroelectric and ferroelastic CaTiO3.

  8. Quantum Phase Transitions in Odd-Mass Nuclei

    NASA Astrophysics Data System (ADS)

    Leviatan, A.; Petrellis, D.; Iachello, F.

    2013-03-01

    Quantum shape-phase transitions in odd-even nuclei are investigated in the framework of the interacting boson-fermion model. Classical and quantum analysis show that the presence of the odd fermion strongly influences the location and nature of the phase transition, especially near the critical point. Experimental evidence for the occurrence of spherical to axially-deformed transitions in odd-proton nuclei Pm, Eu and Tb (Z=61, 63, 65) is presented.

  9. A difference in using atomic layer deposition or physical vapour deposition TiN as electrode material in metal-insulator-metal and metal-insulator-silicon capacitors.

    PubMed

    Groenland, A W; Wolters, R A M; Kovalgin, A Y; Schmitz, J

    2011-09-01

    In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the MIM capacitors the bottom electrode is a patterned 100 nm TiN layer (called BE type 1), deposited via sputtering, while MIS capacitors have a flat bottom electrode (called BE type 2-silicon substrate). A high quality 50-100 nm thick SiO2 layer, made by inductively-coupled plasma CVD at 150 degrees C, is deposited as a dielectric on top of both types of bottom electrodes. BE type 1 (MIM) capacitors have a varying from low to high concentration of structural defects in the SiO2 layer. BE type 2 (MIS) capacitors have a low concentration of structural defects and are used as a reference. Two sets of each capacitor design are fabricated with the TiN top electrode deposited either via physical vapour deposition (PVD, i.e., sputtering) or atomic layer deposition (ALD). The MIM and MIS capacitors are electrically characterized in terms of the leakage current at an electric field of 0.1 MV/cm (I leak) and for different structural defect concentrations. It is shown that the structural defects only show up in the electrical characteristics of BE type 1 capacitors with an ALD TiN-based top electrode. This is due to the excellent step coverage of the ALD process. This work clearly demonstrates the sensitivity to process-induced structural defects, when ALD is used as a step in process integration of conductors on insulation materials.

  10. Changes of physical properties in multiferroic phase transitions.

    PubMed

    Litvin, Daniel B

    2014-07-01

    The physical property coefficients that arise in a phase transition which are zero in the high-symmetry phase and nonzero in the low-symmetry phase are called spontaneous coefficients. For all 1601 Aizu species of phase transitions, matrices have been constructed which show the nonzero coefficients of a wide variety of magnetic and nonmagnetic physical properties including toroidal property coefficients in the high-symmetry phase and their corresponding spontaneous coefficients in the low-symmetry phase. It is also shown that these spontaneous coefficients provide for the distinction of and switching between nonferroelastic domain pairs. PMID:25970196

  11. Fluctuation-driven electroweak phase transition. [in early universe

    NASA Technical Reports Server (NTRS)

    Gleiser, Marcelo; Kolb, Edward W.

    1992-01-01

    We examine the dynamics of the electroweak phase transition in the early Universe. For Higgs masses in the range 46 less than or = M sub H less than or = 150 GeV and top quark masses less than 200 GeV, regions of symmetric and asymmetric vacuum coexist to below the critical temperature, with thermal equilibrium between the two phases maintained by fluctuations of both phases. We propose that the transition to the asymmetric vacuum is completed by percolation of these subcritical fluctuations. Our results are relevant to scenarios of baryogenesis that invoke a weakly first-order phase transition at the electroweak scale.

  12. Reentrant topological phase transitions in a disordered spinless superconducting wire

    NASA Astrophysics Data System (ADS)

    Rieder, Maria-Theresa; Brouwer, Piet W.; Adagideli, İnanç

    2013-08-01

    In a one-dimensional spinless p-wave superconductor with coherence length ξ, disorder induces a phase transition between a topologically nontrivial phase and a trivial insulating phase at the critical mean-free path l=ξ/2. Here, we show that a multichannel spinless p-wave superconductor goes through an alternation of topologically trivial and nontrivial phases upon increasing the disorder strength, the number of phase transitions being equal to the channel number N. The last phase transition, from a nontrivial phase into the trivial phase, takes place at a mean-free path l=ξ/(N+1), parametrically smaller than the critical mean-free path in one dimension. Our result is valid in the limit that the wire width W is much smaller than the superconducting coherence length ξ.

  13. Quantum phase transitions of topological insulators without gap closing.

    PubMed

    Rachel, Stephan

    2016-10-12

    We consider two-dimensional Chern insulators and time-reversal invariant topological insulators and discuss the effect of perturbations breaking either particle-number conservation or time-reversal symmetry. The appearance of trivial mass terms is expected to cause quantum phase transitions into trivial phases when such a perturbation overweighs the topological term. These phase transitions are usually associated with a bulk-gap closing. In contrast, the chiral Chern insulator is unaffected by particle-number breaking perturbations. Moreover, the [Formula: see text] topological insulator undergoes phase transitions into topologically trivial phases without bulk-gap closing in the presence of any of such perturbations. In certain cases, these phase transitions can be circumvented and the protection restored by another U(1) symmetry, e.g. due to spin conservation. These findings are discussed in the context of interacting topological insulators.

  14. Wetting transitions in two-, three-, and four-phase systems.

    PubMed

    Hejazi, Vahid; Nosonovsky, Michael

    2012-01-31

    We discuss wetting of rough surfaces with two-phase (solid-liquid), three-phase (solid-water-air and solid-oil-water), and four-phase (solid-oil-water-air) interfaces mimicking fish scales. We extend the traditional Wenzel and Cassie-Baxter models to these cases. We further present experimental observations of two-, three-, and four-phase systems in the case of metal-matrix composite solid surfaces immersed in water and in contact with oil. Experimental observations show that wetting transitions can occur in underwater oleophobic systems. We also discuss wetting transitions as phase transitions using the phase-field approach and show that a phenomenological gradient coefficient is responsible for wetting transition, energy barriers, and wetting/dewetting asymmetry (hysteresis). PMID:22054126

  15. Quantum phase transitions of topological insulators without gap closing

    NASA Astrophysics Data System (ADS)

    Rachel, Stephan

    2016-10-01

    We consider two-dimensional Chern insulators and time-reversal invariant topological insulators and discuss the effect of perturbations breaking either particle-number conservation or time-reversal symmetry. The appearance of trivial mass terms is expected to cause quantum phase transitions into trivial phases when such a perturbation overweighs the topological term. These phase transitions are usually associated with a bulk-gap closing. In contrast, the chiral Chern insulator is unaffected by particle-number breaking perturbations. Moreover, the {{{Z}}2} topological insulator undergoes phase transitions into topologically trivial phases without bulk-gap closing in the presence of any of such perturbations. In certain cases, these phase transitions can be circumvented and the protection restored by another U(1) symmetry, e.g. due to spin conservation. These findings are discussed in the context of interacting topological insulators.

  16. Quantum phase transitions of topological insulators without gap closing.

    PubMed

    Rachel, Stephan

    2016-10-12

    We consider two-dimensional Chern insulators and time-reversal invariant topological insulators and discuss the effect of perturbations breaking either particle-number conservation or time-reversal symmetry. The appearance of trivial mass terms is expected to cause quantum phase transitions into trivial phases when such a perturbation overweighs the topological term. These phase transitions are usually associated with a bulk-gap closing. In contrast, the chiral Chern insulator is unaffected by particle-number breaking perturbations. Moreover, the [Formula: see text] topological insulator undergoes phase transitions into topologically trivial phases without bulk-gap closing in the presence of any of such perturbations. In certain cases, these phase transitions can be circumvented and the protection restored by another U(1) symmetry, e.g. due to spin conservation. These findings are discussed in the context of interacting topological insulators. PMID:27530509

  17. Wetting transitions in two-, three-, and four-phase systems.

    PubMed

    Hejazi, Vahid; Nosonovsky, Michael

    2012-01-31

    We discuss wetting of rough surfaces with two-phase (solid-liquid), three-phase (solid-water-air and solid-oil-water), and four-phase (solid-oil-water-air) interfaces mimicking fish scales. We extend the traditional Wenzel and Cassie-Baxter models to these cases. We further present experimental observations of two-, three-, and four-phase systems in the case of metal-matrix composite solid surfaces immersed in water and in contact with oil. Experimental observations show that wetting transitions can occur in underwater oleophobic systems. We also discuss wetting transitions as phase transitions using the phase-field approach and show that a phenomenological gradient coefficient is responsible for wetting transition, energy barriers, and wetting/dewetting asymmetry (hysteresis).

  18. CO2 Capture from Flue Gas by Phase Transitional Absorption

    SciTech Connect

    Liang Hu

    2009-06-30

    A novel absorption process called Phase Transitional Absorption was invented. What is the Phase Transitional Absorption? Phase Transitional Absorption is a two or multi phase absorption system, CO{sub 2} rich phase and CO{sub 2} lean phase. During Absorption, CO{sub 2} is accumulated in CO{sub 2} rich phase. After separating the two phases, CO{sub 2} rich phase is forward to regeneration. After regeneration, the regenerated CO{sub 2} rich phase combines CO{sub 2} lean phase to form absorbent again to complete the cycle. The advantage for Phase Transitional Absorption is obvious, significantly saving on regeneration energy. Because CO{sub 2} lean phase was separated before regeneration, only CO{sub 2} rich phase was forward to regeneration. The absorption system we developed has the features of high absorption rate, high loading and working capacity, low corrosion, low regeneration heat, no toxic to environment, etc. The process evaluation shows that our process is able to save 80% energy cost by comparing with MEA process.

  19. Thermodynamic model of nonequilibrium phase transitions.

    PubMed

    Martyushev, L M; Konovalov, M S

    2011-07-01

    Within the scope of a thermodynamic description using the maximum entropy production principle, transitions from one nonequilibrium (kinetic) regime to another are considered. It is shown that in the case when power-law dependencies of thermodynamic flux on force are similar for two regimes, only a transition accompanied by a positive jump of thermodynamic flux is possible between them. It is found that the difference in powers of the dependencies of thermodynamic fluxes on forces results in a number of interesting nonequilibrium transitions between kinetic regimes, including the reentrant one with a negative jump of thermodynamic flux. PMID:21867119

  20. Magnetism and electronic phase transitions in monoclinic transition metal dichalcogenides with transition metal atoms embedded

    NASA Astrophysics Data System (ADS)

    Lin, Xianqing; Ni, Jun

    2016-08-01

    First-principles calculations have been performed to study the energetic, electronic, and magnetic properties of substitutional 3d transition metal dopants in monoclinic transition metal dichalcogenides (TMDs) as topological insulators ( 1 T ' - MX 2 with M = (Mo, W) and X = (S, Se)). We find various favorite features in these doped systems to introduce magnetism and other desirable electronic properties: (i) The Mn embedded monoclinic TMDs are magnetic, and the doped 1 T ' - MoS 2 still maintains the semiconducting character with high concentration of Mn, while an electronic phase transition occurs in other Mn doped monoclinic TMDs with an increasing concentration of Mn. Two Mn dopants prefer the ferromagnetic coupling except for substitution of the nearest Mo atoms in 1 T ' - MoS 2 , and the strength of exchange interaction shows anisotropic behavior with dopants along one Mo zigzag chain having much stronger coupling. (ii) The substitutional V is a promising hole dopant, which causes little change to the energy dispersion around the conduction and valence band edges in most systems. In contrast, parts of the conduction band drop for the electron dopants Co and Ni due to the large structural distortion. Moreover, closing band gaps of the host materials are observed with increasing carrier concentration. (iii) Single Fe dopant has a magnetic moment, but it also dopes electrons. When two Fe dopants have a small distance, the systems turn into nonmagnetic semiconductors. (iv) The formation energies of all dopants are much lower than those in hexagonal TMDs and are all negative in certain growth conditions, suggesting possible realization of the predicted magnetism, electronic phase transitions as well as carrier doping in 1 T ' - MX 2 based topological devices.

  1. The effects of Venusian mantle convection with multiple phase transitions

    NASA Technical Reports Server (NTRS)

    Steinbach, V.; Yuen, D. A.; Christensen, U. R.

    1992-01-01

    Recently there was a flurry of activities in studying the effects of phase transitions in the Earth's mantle. From petrological and geophysical considerations, phase-transitions would also play an important role in venusian dynamics. The basic differences between the two planets are the surface boundary conditions, both thermally and mechanically. In this vein we have studied time-dependent mantle convection with multiple phase transitions and depth-dependent thermal expansivity (alpha is approximately rho(exp -6)), based on high-pressure and temperature measurements. Both the olivine-spinel and spinel-perovskite transitions were simulated by introducing an effective thermal expansivity, as described. Used together with the extended Boussinesq Approximation this method serves as a powerful tool to examine the effects of phase transitions on convection at relatively low computational costs.

  2. The electroweak phase transition in the Inert Doublet Model

    SciTech Connect

    Blinov, Nikita; Profumo, Stefano; Stefaniak, Tim

    2015-07-21

    We study the strength of a first-order electroweak phase transition in the Inert Doublet Model (IDM), where particle dark matter (DM) is comprised of the lightest neutral inert Higgs boson. We improve over previous studies in the description and treatment of the finite-temperature effective potential and of the electroweak phase transition. We focus on a set of benchmark models inspired by the key mechanisms in the IDM leading to a viable dark matter particle candidate, and illustrate how to enhance the strength of the electroweak phase transition by adjusting the masses of the yet undiscovered IDM Higgs states. We argue that across a variety of DM masses, obtaining a strong enough first-order phase transition is a generic possibility in the IDM. We find that due to direct dark matter searches and collider constraints, a sufficiently strong transition and a thermal relic density matching the universal DM abundance is possible only in the Higgs funnel regime.

  3. Deviatoric stress-induced phase transitions in diamantane

    SciTech Connect

    Yang, Fan; Lin, Yu; Dahl, Jeremy E. P.; Carlson, Robert M. K.; Mao, Wendy L.

    2014-10-21

    The high-pressure behavior of diamantane was investigated using angle-dispersive synchrotron x-ray diffraction (XRD) and Raman spectroscopy in diamond anvil cells. Our experiments revealed that the structural transitions in diamantane were extremely sensitive to deviatoric stress. Under non-hydrostatic conditions, diamantane underwent a cubic (space group Pa3) to a monoclinic phase transition at below 0.15 GPa, the lowest pressure we were able to measure. Upon further compression to 3.5 GPa, this monoclinic phase transformed into another high-pressure monoclinic phase which persisted to 32 GPa, the highest pressure studied in our experiments. However, under more hydrostatic conditions using silicone oil as a pressure medium, the transition pressure to the first high-pressure monoclinic phase was elevated to 7–10 GPa, which coincided with the hydrostatic limit of silicone oil. In another experiment using helium as a pressure medium, no phase transitions were observed to the highest pressure we reached (13 GPa). In addition, large hysteresis and sluggish transition kinetics were observed upon decompression. Over the pressure range where phase transitions were confirmed by XRD, only continuous changes in the Raman spectra were observed. This suggests that these phase transitions are associated with unit cell distortions and modifications in molecular packing rather than the formation of new carbon-carbon bonds under pressure.

  4. High pressure structural phase transitions of PbPo

    NASA Astrophysics Data System (ADS)

    Bencherif, Y.; Boukra, A.; Zaoui, A.; Ferhat, M.

    2012-09-01

    First-principles calculations have been performed to investigate the high pressure phase transitions and dynamical properties of the less known lead polonium compound. The calculated ground state parameters for the NaCl phase show good agreement with the experimental data. The obtained results show that the intermediate phase transition for this compound is the orthorhombic Pnma phase. The PbPo undergoes from the rocksalt to Pnma phase at 4.20 GPa. Further structural phase transition from intermediate to CsCl phase has been found at 8.5 GPa. In addition, phonon dispersion spectra were derived from linear-response to density functional theory. In particular, we show that the dynamical properties of PbPo exhibit some peculiar features compared to other III-V compounds. Finally, thermodynamics properties have been also addressed from quasiharmonic approximation.

  5. Entanglement driven phase transitions in spin-orbital models

    NASA Astrophysics Data System (ADS)

    You, Wen-Long; Oleś, Andrzej M.; Horsch, Peter

    2015-08-01

    To demonstrate the role played by the von Neumann entropy (vNE) spectra in quantum phase transitions we investigate the one-dimensional anisotropic SU(2)\\otimes {XXZ} spin-orbital model with negative exchange parameter. In the case of classical Ising orbital interactions we discover an unexpected novel phase with Majumdar-Ghosh-like spin-singlet dimer correlations triggered by spin-orbital entanglement (SOE) and having k=π /2 orbital correlations, while all the other phases are disentangled. For anisotropic XXZ orbital interactions both SOE and spin-dimer correlations extend to the antiferro-spin/alternating-orbital phase. This quantum phase provides a unique example of two coupled order parameters which change the character of the phase transition from first-order to continuous. Hereby we have established the vNE spectral function as a valuable tool to identify the change of ground state degeneracies and of the SOE of elementary excitations in quantum phase transitions.

  6. Electronic structure of a metal-insulator interface: Towards a theory of nonreactive adhesion

    NASA Astrophysics Data System (ADS)

    Bordier, G.; Noguera, C.

    1991-09-01

    With the aim of studying metal-insulator adhesion, we have performed an analytical description of the electronic structure of a flat and defectless metal-insulator interface, for both rocksalt and zinc-blende crystallographic structures of the insulator and, respectively, (100) and (110) orientations of the interface. We model the metal by a jellium, and the AB-type insulator by a tight-binding Hamiltonian with one atomic orbital per site. A matching procedure involving a Green's-function method yields the local density of states of the metal-induced gap states (MIGS), which are found to be in good agreement with previous numerical estimations on specific materials. By analytically solving the Poisson equation in a self-consistent way, we are able to determine the position of the Fermi level of the whole system for any value of the insulator ionicity. Our results depend upon the density of electrons in the metal, and upon the penetration length and the density of MIGS at midgap. They do not depend much upon the crystallographic structure and orientation of the interface. The two relevant parameters are the Fermi energy of the metal and a ratio that represents the ionocovalent character of the insulator. This latter quantity can be allowed to vary from zero to infinity, thus describing the whole range of compounds from covalent semiconductors to highly insulating materials. We produce an analytical expression of the Schottky-barrier height and of the index of interface behavior, S, valid in the whole range of ionicity. S is found to fit well the available experimental data. We demonstrate that the capacitor model to estimate S is restricted to strongly ionic insulators, while it was generally used in the opposite limit. We suggest finally that the above electronic parameters also drive the strength of adhesion and wetting in nonreactive metal-insulator systems.

  7. Photothermoelectric (PTE) Versus Photopyroelectric (PPE) Detection of Phase Transitions

    NASA Astrophysics Data System (ADS)

    Dadarlat, D.; Guilmeau, E.; Hadj Sahraoui, A.; Tudoran, C.; Surducan, V.; Bourgès, C.; Lemoine, P.

    2016-05-01

    The photopyroelectric (PPE) technique is one of the photothermal (PT) methods mostly used for phase transitions investigations. In this paper, we want to compare the PPE results with those obtained using another, recently developed PT method [the photothermoelectric (PTE) calorimetry] for the same purpose of detecting phase transitions. The well-known ferro-paraelectric phase transition of TGS, taking place at a convenient temperature (about 49 {}^{circ }hbox {C}), has been selected for demonstration. A comparison of the two PPE and PTE methods, both in the back detection configuration (in the special case of optically opaque sample and thermally thick regime for both sensors and sample) shows that they are equally suitable for phase transitions detection. Performing a proper calibration, the amplitude and phase of the signals can be used in order to obtain the critical behaviour of all sample's static and dynamic thermal parameters.

  8. Novel Quantum Phase Transition in the Frustrated Spin Nanotube

    NASA Astrophysics Data System (ADS)

    Sakai, Toru; Nakano, Hiroki

    The S=1/2 three-leg quantum spin tube is investigated using the numerical diagonalization. The study indicated a new quantum phase transition between the 1/3 magnetization plateau phase and the plateauless one, with respect to the spin anisotropy. The phase diagram is also presented.

  9. Tunable all-optical plasmonic rectifier in nanoscale metal-insulator-metal waveguides.

    PubMed

    Xu, Yi; Wang, Xiaomeng; Deng, Haidong; Guo, Kangxian

    2014-10-15

    We propose a tunable all-optical plasmonic rectifier based on the nonlinear Fano resonance in a metal-insulator-metal plasmonic waveguide and cavities coupling system. We develop a theoretical model based on the temporal coupled-mode theory to study the device physics of the nanoscale rectifier. We further demonstrate via the finite difference time domain numerical experiment that our idea can be realized in a plasmonic system with an ultracompact size of ~120×800  nm². The tunable plasmonic rectifier could facilitate the all-optical signal processing in nanoscale.

  10. Boron carbon nitride based metal-insulator-metal UV detectors for harsh environment applications.

    PubMed

    Prakash, Adithya; Nehate, Shraddha D; Sundaram, Kalpathy B

    2016-09-15

    A metal-insulator-metal (MIM) structure using boron carbon nitride (BCN) was tested for its UV detection capability. Since BCN is one of the hardest and chemically robust materials, it is expected to be a potential choice for a UV detector in extreme and harsh conditions. The BCN thin films were deposited using a dual target RF magnetron sputtering process. The optoelectronic performance of the BCN MIM devices were examined through UV photocurrent measurements. A UV photocurrent of two orders of magnitude higher with respect to dark current was achieved in the range of -3 to 3 V. PMID:27628369

  11. A Refractive Index Sensor Based on a Metal-Insulator-Metal Waveguide-Coupled Ring Resonator

    PubMed Central

    Yan, Shu-Bin; Luo, Liang; Xue, Chen-Yang; Zhang, Zhi-Dong

    2015-01-01

    A refractive index sensor composed of two straight metal-insulator-metal waveguides and a ring resonator is presented. One end of each straight waveguide is sealed and the other end acts as port. The transmission spectrum and magnetic field distribution of this sensor structure are simulated using finite-difference time-domain method (FDTD). The results show that an asymmetric line shape is observed in the transmission spectrum, and that the transmission spectrum shows a filter-like behavior. The quality factor and sensitivity are taken to characterize its sensing performance and filter properties. How structural parameters affect the sensing performance and filter properties is also studied. PMID:26610491

  12. Tunable Bragg filters with a phase transition material defect layer.

    PubMed

    Wang, Xi; Gong, Zilun; Dong, Kaichen; Lou, Shuai; Slack, Jonathan; Anders, Andre; Yao, Jie

    2016-09-01

    We propose an all-solid-state tunable Bragg filter with a phase transition material as the defect layer. Bragg filters based on a vanadium dioxide defect layer sandwiched between silicon dioxide/titanium dioxide Bragg gratings are experimentally demonstrated. Temperature dependent reflection spectroscopy shows the dynamic tunability and hysteresis properties of the Bragg filter. Temperature dependent Raman spectroscopy reveals the connection between the tunability and the phase transition of the vanadium dioxide defect layer. This work paves a new avenue in tunable Bragg filter designs and promises more applications by combining phase transition materials and optical cavities. PMID:27607643

  13. Phase transitions in pure and dilute thin ferromagnetic films

    NASA Astrophysics Data System (ADS)

    Korneta, W.; Pytel, Z.

    1983-10-01

    The mean-field model of a thin ferromagnetic film where the nearest-neighbor exchange coupling in surface layers can be different from that inside the film is considered. The phase diagram, equations for the second-order phase-transition lines, and the spontaneous magnetization profiles near the phase transitions are given. It is shown that there is no extra-ordinary transition in a thin film. If the thickness of the film tends to infinity the well-known results for the mean-field model of a semi-infinite ferromagnet are obtained. The generalization for disordered dilute thin ferromagnetic films and semi-infinite ferromagnets is also given.

  14. Observation of topological phase transitions in photonic quasicrystals.

    PubMed

    Verbin, Mor; Zilberberg, Oded; Kraus, Yaacov E; Lahini, Yoav; Silberberg, Yaron

    2013-02-15

    Topological insulators and topological superconductors are distinguished by their bulk phase transitions and gapless states at a sharp boundary with the vacuum. Quasicrystals have recently been found to be topologically nontrivial. In quasicrystals, the bulk phase transitions occur in the same manner as standard topological materials, but their boundary phenomena are more subtle. In this Letter we directly observe bulk phase transitions, using photonic quasicrystals, by constructing a smooth boundary between topologically distinct one-dimensional quasicrystals. Moreover, we use the same method to experimentally confirm the topological equivalence between the Harper and Fibonacci quasicrystals. PMID:25166388

  15. Topology-driven magnetic quantum phase transition in topological insulators.

    PubMed

    Zhang, Jinsong; Chang, Cui-Zu; Tang, Peizhe; Zhang, Zuocheng; Feng, Xiao; Li, Kang; Wang, Li-Li; Chen, Xi; Liu, Chaoxing; Duan, Wenhui; He, Ke; Xue, Qi-Kun; Ma, Xucun; Wang, Yayu

    2013-03-29

    The breaking of time reversal symmetry in topological insulators may create previously unknown quantum effects. We observed a magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 topological insulator films grown by means of molecular beam epitaxy. Across the critical point, a topological quantum phase transition is revealed through both angle-resolved photoemission measurements and density functional theory calculations. We present strong evidence that the bulk band topology is the fundamental driving force for the magnetic quantum phase transition. The tunable topological and magnetic properties in this system are well suited for realizing the exotic topological quantum phenomena in magnetic topological insulators.

  16. Safety performance of traffic phases and phase transitions in three phase traffic theory.

    PubMed

    Xu, Chengcheng; Liu, Pan; Wang, Wei; Li, Zhibin

    2015-12-01

    Crash risk prediction models were developed to link safety to various phases and phase transitions defined by the three phase traffic theory. Results of the Bayesian conditional logit analysis showed that different traffic states differed distinctly with respect to safety performance. The random-parameter logit approach was utilized to account for the heterogeneity caused by unobserved factors. The Bayesian inference approach based on the Markov Chain Monte Carlo (MCMC) method was used for the estimation of the random-parameter logit model. The proposed approach increased the prediction performance of the crash risk models as compared with the conventional logit model. The three phase traffic theory can help us better understand the mechanism of crash occurrences in various traffic states. The contributing factors to crash likelihood can be well explained by the mechanism of phase transitions. We further discovered that the free flow state can be divided into two sub-phases on the basis of safety performance, including a true free flow state in which the interactions between vehicles are minor, and a platooned traffic state in which bunched vehicles travel in successions. The results of this study suggest that a safety perspective can be added to the three phase traffic theory. The results also suggest that the heterogeneity between different traffic states should be considered when estimating the risks of crash occurrences on freeways. PMID:26367463

  17. Effect of dimensionality on vapor-liquid phase transition

    NASA Astrophysics Data System (ADS)

    Singh, Sudhir Kumar

    2014-04-01

    Dimensionality play significant role on `phase transitions'. Fluids in macroscopic confinement (bulk or 3-Dimensional, 3D) do not show significant changes in their phase transition properties with extent of confinement, since the number of molecules away from the surrounding surfaces is astronomically higher than the number of molecules in close proximity of the confining surfaces. In microscopic confinement (quasi 3D to quasi-2D), however, the number of molecules away from the close proximity of the surface is not as high as is the case with macroscopic (3D) confinement. Hence, under the same thermodynamic conditions `phase transition' properties at microscopic confinement may not remain the same as the macroscopic or 3D values. Phase transitions at extremely small scale become very sensitive to the dimensions as well as the surface characteristics of the system. In this work our investigations reveal the effect of dimensionality on the phase transition from 3D to quasi-2D to 2D behavior. We have used grand canonical transition matrix Monte Carlo simulation to understand the vapor-liquid phase transitions from 3D to quasi-2D behavior. Such studies can be helpful in understanding and controlling the fluid film behaviour confined between solid surfaces of few molecular diameters, for example, in lubrication applications.

  18. Pontine respiratory activity involved in inspiratory/expiratory phase transition

    PubMed Central

    Mörschel, Michael; Dutschmann, Mathias

    2009-01-01

    Control of the timing of the inspiratory/expiratory (IE) phase transition is a hallmark of respiratory pattern formation. In principle, sensory feedback from pulmonary stretch receptors (Breuer–Hering reflex, BHR) is seen as the major controller for the IE phase transition, while pontine-based control of IE phase transition by both the pontine Kölliker–Fuse nucleus (KF) and parabrachial complex is seen as a secondary or backup mechanism. However, previous studies have shown that the BHR can habituate in vivo. Thus, habituation reduces sensory feedback, so the role of the pons, and specifically the KF, for IE phase transition may increase dramatically. Pontine-mediated control of the IE phase transition is not completely understood. In the present review, we discuss existing models for ponto-medullary interaction that may be involved in the control of inspiratory duration and IE transition. We also present intracellular recordings of pontine respiratory units derived from an in situ intra-arterially perfused brainstem preparation of rats. With the absence of lung inflation, this preparation generates a normal respiratory pattern and many of the recorded pontine units demonstrated phasic respiratory-related activity. The analysis of changes in membrane potentials of pontine respiratory neurons has allowed us to propose a number of pontine-medullary interactions not considered before. The involvement of these putative interactions in pontine-mediated control of IE phase transitions is discussed. PMID:19651653

  19. Phase transitions for a collective coordinate coupled to Luttinger liquids.

    PubMed

    Horovitz, Baruch; Giamarchi, Thierry; Le Doussal, Pierre

    2013-09-13

    We study various realizations of collective coordinates, e.g., the position of a particle, the charge of a Coulomb box, or the phase of a Bose or a superconducting condensate, coupled to Luttinger liquids with N flavors. We find that for a Luttinger parameter (1/2)phase transition from a delocalized phase into a phase with a periodic potential at strong coupling. In the delocalized phase the dynamics is dominated by an effective mass, i.e., diffusive in imaginary time, while on the transition line it becomes dissipative. At K=(1/2) there is an additional transition into a localized phase with no diffusion at zero temperature. PMID:24074101

  20. High-resolution calorimetric study of phase transitions in chiral smectic-C liquid crystalline phases.

    PubMed

    Sasaki, Y; Le, K V; Aya, S; Isobe, M; Yao, H; Huang, C C; Takezoe, H; Ema, K

    2012-12-01

    We carried out an improved characterization of phase transitions among chiral smectic-C subphases observed for various antiferroelectric liquid crystals by precise heat capacity measurements. It was found that the phase transitions are intrinsically first order exhibiting a remarkable heat anomaly which involves little pretransitional thermal fluctuation and a finite thermal hysteresis. On the other hand, we also noticed that the critical point of the smectic-C(α)(*)-smectic-C* transition is induced by the destabilization of the smectic-C(α)(*) phase which couples with the fluctuation associated with the smectic-A-smectic-C(α)(*) phase transition.

  1. Solution-processed phase-change VO(2) metamaterials from colloidal vanadium oxide (VO(x)) nanocrystals.

    PubMed

    Paik, Taejong; Hong, Sung-Hoon; Gaulding, E Ashley; Caglayan, Humeyra; Gordon, Thomas R; Engheta, Nader; Kagan, Cherie R; Murray, Christopher B

    2014-01-28

    We demonstrate thermally switchable VO2 metamaterials fabricated using solution-processable colloidal nanocrystals (NCs). Vanadium oxide (VOx) NCs are synthesized through a nonhydrolytic reaction and deposited from stable colloidal dispersions to form NC thin films. Rapid thermal annealing transforms the VOx NC thin films into monoclinic, nanocrystalline VO2 thin films that show a sharp, reversible metal-insulator phase transition. Introduction of precise concentrations of tungsten dopings into the colloidal VOx NCs enables the still sharp phase transition of the VO2 thin films to be tuned to lower temperatures as the doping level increases. We fabricate "smart", differentially doped, multilayered VO2 films to program the phase and therefore the metal-insulator behavior of constituent vertically structured layers with temperature. With increasing temperature, we tailored the optical response of multilayered films in the near-IR and IR regions from that of a strong light absorber, in a metal-insulator structure, to that of a Drude-like reflector, characteristic of a pure metallic structure. We demonstrate that nanocrystal-based nanoimprinting can be employed to pattern multilayered subwavelength nanostructures, such as three-dimensional VO2 nanopillar arrays, that exhibit plasmonic dipolar responses tunable with a temperature change. PMID:24377298

  2. Integrability and Quantum Phase Transitions in Interacting Boson Models

    NASA Astrophysics Data System (ADS)

    Dukelsky, J.; Arias, J. M.; Garcia-Ramos, J. E.; Pittel, S.

    2004-04-01

    The exact solution of the boson pairing hamiltonian given by Richardson in the sixties is used to study the phenomena of level crossings and quantum phase transitions in the integrable regions of the sd and sdg interacting boson models.

  3. GRAVITATIONAL PHASE TRANSITIONS IN THE COSMOLOGICAL MANY-BODY SYSTEM

    SciTech Connect

    Saslaw, William C.; Ahmad, Farooq E-mail: farphy@kashmiruniversity.ac.i

    2010-09-10

    Gravitational many-body clustering of particles (e.g., galaxies) in an expanding universe may be regarded as a form of phase transition. We calculate its properties here and find that it differs in several ways from usual laboratory phase transitions. The cosmological case is never complete since it takes longer to evolve dynamically on larger spatial scales. To examine this, we calculate the effects of higher order corrections on the thermodynamic properties and distribution functions (which are known to agree with observations). The additional higher order terms are subdominant and decrease as the number of particles in the system increases. We also propose an order parameter for this hierarchical phase transition and discuss its relation to the Yang-Lee theory of phase transitions. These results also help to quantify earlier ideas of 'continuous clustering'.

  4. Lifshitz Transitions in Magnetic Phases of the Periodic Anderson Model

    NASA Astrophysics Data System (ADS)

    Kubo, Katsunori

    2015-09-01

    We investigate the reconstruction of a Fermi surface, which is called a Lifshitz transition, in magnetically ordered phases of the periodic Anderson model on a square lattice with a finite Coulomb interaction between f electrons. We apply the variational Monte Carlo method to the model by using the Gutzwiller wavefunctions for the paramagnetic, antiferromagnetic, ferromagnetic, and charge-density-wave states. We find that an antiferromagnetic phase is realized around half-filling and a ferromagnetic phase is realized when the system is far away from half-filling. In both magnetic phases, Lifshitz transitions take place. By analyzing the electronic states, we conclude that the Lifshitz transitions to large ordered-moment states can be regarded as itinerant-localized transitions of the f electrons.

  5. Intrinsic response of polymer liquid crystals in photochemical phase transition

    SciTech Connect

    Ikeda, Tomiki; Sasaki, Takeo; Kim, Haengboo )

    1991-01-24

    Time-resolved measurements were performed on the photochemically induced isothermal phase transition of polymer liquid crystals (PLC) with mesogenic side chains of phenyl benzoate (PAPB3) and cyanobiphenyl (PACB3) under conditions wherein the photochemical reaction of the doped photoresponsive molecule (4-butyl-4-{prime}-methoxyazobenzene, BMAB) was completed within {approximately} 10 ns, and the subsequent phase transition of the matrix PLC from nematic (N) to isotropic (I) state was followed by time-resolved measurements of the birefringence of the system. Formation of a sufficient amount of the cis isomer of BMAB with a single pulse of a laser lowered the N-I phase transition temperature of the mixture, inducing the N-I phase transition of PLCs isothermally in a time range of {approximately} 200 ms. This time range is comparable to that of low molecular weight liquid crystals, indicating that suppression in mobility of mesogens in PLCs does not affect significantly the thermodynamically controlled process.

  6. The QCD phase transitions: From mechanism to observables

    SciTech Connect

    Shuryak, E.V.

    1997-09-22

    This paper contains viewgraphs on quantum chromodynamic phase transformations during heavy ion collisions. Some topics briefly described are: finite T transitions of I molecule pairs; finite density transitions of diquarks polymers; and the softtest point of the equation of state as a source of discontinuous behavior as a function of collision energy or centrality.

  7. Phase transitions in real gases and ideal Bose gases

    NASA Astrophysics Data System (ADS)

    Maslov, V. P.

    2011-05-01

    Based on number theory, we present a new concept of gas without the particle interaction taken into account in which there are first-order phase transitions for T < T cr on isotherms. We present formulas for new ideal gases, solving the Gibbs paradox, and also formulas for the transition to real gases based on the concept of the Zeno line.

  8. Gravitational waves from first order phase transitions during inflation

    SciTech Connect

    Chialva, Diego

    2011-01-15

    We study the production, spectrum, and detectability of gravitational waves in models of the early Universe where first order phase transitions occur during inflation. We consider all relevant sources. The self-consistency of the scenario strongly affects the features of the waves. The spectrum appears to be mainly sourced by collisions of bubble of the new phases, while plasma dynamics (turbulence) and the primordial gauge fields connected to the physics of the transitions are generally subdominant. The amplitude and frequency dependence of the spectrum for modes that exit the horizon during inflation are different from those of the waves produced by quantum vacuum oscillations of the metric or by first order phase transitions not occurring during inflation. A not too large number of slow (but still successful) phase transitions can leave detectable marks in the common microwave background radiation, but the signal weakens rapidly for faster transitions. When the number of phase transitions is instead large, the primordial gravitational waves can be observed both in the common microwave background radiation or with LISA (but in this case only marginally, for the slowest transitions) and especially with DECIGO. We also discuss the nucleosynthesis bound and the constraints it places on the parameters of the models.

  9. Phase transitions in nanostructured potassium nitrate

    NASA Astrophysics Data System (ADS)

    Naberezhnov, Aleksandr; Koroleva, Ekaterina; Rysiakiewicz-Pasek, Ewa; Fokin, Aleksandr; Sysoeva, Anna; Franz, Alexandra; Seregin, Maksim; Tovar, Mihael

    2014-11-01

    Dielectric properties and temperature evolution of the crystal structure of nanocomposites on the basis of porous glasses and KNO3 embedded into the pores have been studied on heating and cooling. It is shown that the stability of the ferroelectric phase depends on nanoparticle sizes and temperature prehistory of sample preparation and measurement procedure. The temperature interval, where the ferroelectric phase exists, increases on decreasing of the nanoparticle size. In the composite of KNO3 and porous glasses with the average pore diameters of 7 nm, the ferroelectric phase becomes stable down to 100 K after the first heating-cooling circle.

  10. Plasmonic mode interferences and Fano resonances in Metal-Insulator-Metal nanostructured interface.

    PubMed

    Nicolas, Rana; Lévêque, Gaëtan; Marae-Djouda, Joseph; Montay, Guillame; Madi, Yazid; Plain, Jérôme; Herro, Ziad; Kazan, Michel; Adam, Pierre-Michel; Maurer, Thomas

    2015-09-24

    Metal-insulator-metal systems exhibit a rich underlying physics leading to a high degree of tunability of their spectral properties. We performed a systematic study on a metal-insulator-nanostructured metal system with a thin 6 nm dielectric spacer and showed how the nanoparticle sizes and excitation conditions lead to the tunability and coupling/decoupling of localized and delocalized plasmonic modes. We also experimentally evidenced a tunable Fano resonance in a broad spectral window 600 to 800 nm resulting from the interference of gap modes with white light broad band transmitted waves at the interface playing the role of the continuum. By varying the incident illumination angle shifts in the resonances give the possibility to couple or decouple the localized and delocalized modes and to induce a strong change of the asymmetric Fano profile. All these results were confirmed with a crossed comparison between experimental and theoretical measurements, confirming the nature of different modes. The high degree of control and tunability of this plasmonically rich system paves the way for designing and engineering of similar systems with numerous applications. In particular, sensing measurements were performed and a figure of merit of 3.8 was recorded ranking this sensor among the highest sensitive in this wavelength range.

  11. Plasmonic mode interferences and Fano resonances in Metal-Insulator- Metal nanostructured interface

    PubMed Central

    Nicolas, Rana; Lévêque, Gaëtan; Marae-Djouda, Joseph; Montay, Guillame; Madi, Yazid; Plain, Jérôme; Herro, Ziad; Kazan, Michel; Adam, Pierre-Michel; Maurer, Thomas

    2015-01-01

    Metal-insulator-metal systems exhibit a rich underlying physics leading to a high degree of tunability of their spectral properties. We performed a systematic study on a metal-insulator-nanostructured metal system with a thin 6 nm dielectric spacer and showed how the nanoparticle sizes and excitation conditions lead to the tunability and coupling/decoupling of localized and delocalized plasmonic modes. We also experimentally evidenced a tunable Fano resonance in a broad spectral window 600 to 800 nm resulting from the interference of gap modes with white light broad band transmitted waves at the interface playing the role of the continuum. By varying the incident illumination angle shifts in the resonances give the possibility to couple or decouple the localized and delocalized modes and to induce a strong change of the asymmetric Fano profile. All these results were confirmed with a crossed comparison between experimental and theoretical measurements, confirming the nature of different modes. The high degree of control and tunability of this plasmonically rich system paves the way for designing and engineering of similar systems with numerous applications. In particular, sensing measurements were performed and a figure of merit of 3.8 was recorded ranking this sensor among the highest sensitive in this wavelength range. PMID:26399425

  12. Plasmonic mode interferences and Fano resonances in Metal-Insulator- Metal nanostructured interface

    NASA Astrophysics Data System (ADS)

    Nicolas, Rana; Lévêque, Gaëtan; Marae-Djouda, Joseph; Montay, Guillame; Madi, Yazid; Plain, Jérôme; Herro, Ziad; Kazan, Michel; Adam, Pierre-Michel; Maurer, Thomas

    2015-09-01

    Metal-insulator-metal systems exhibit a rich underlying physics leading to a high degree of tunability of their spectral properties. We performed a systematic study on a metal-insulator-nanostructured metal system with a thin 6 nm dielectric spacer and showed how the nanoparticle sizes and excitation conditions lead to the tunability and coupling/decoupling of localized and delocalized plasmonic modes. We also experimentally evidenced a tunable Fano resonance in a broad spectral window 600 to 800 nm resulting from the interference of gap modes with white light broad band transmitted waves at the interface playing the role of the continuum. By varying the incident illumination angle shifts in the resonances give the possibility to couple or decouple the localized and delocalized modes and to induce a strong change of the asymmetric Fano profile. All these results were confirmed with a crossed comparison between experimental and theoretical measurements, confirming the nature of different modes. The high degree of control and tunability of this plasmonically rich system paves the way for designing and engineering of similar systems with numerous applications. In particular, sensing measurements were performed and a figure of merit of 3.8 was recorded ranking this sensor among the highest sensitive in this wavelength range.

  13. Plasmonic mode interferences and Fano resonances in Metal-Insulator-Metal nanostructured interface.

    PubMed

    Nicolas, Rana; Lévêque, Gaëtan; Marae-Djouda, Joseph; Montay, Guillame; Madi, Yazid; Plain, Jérôme; Herro, Ziad; Kazan, Michel; Adam, Pierre-Michel; Maurer, Thomas

    2015-01-01

    Metal-insulator-metal systems exhibit a rich underlying physics leading to a high degree of tunability of their spectral properties. We performed a systematic study on a metal-insulator-nanostructured metal system with a thin 6 nm dielectric spacer and showed how the nanoparticle sizes and excitation conditions lead to the tunability and coupling/decoupling of localized and delocalized plasmonic modes. We also experimentally evidenced a tunable Fano resonance in a broad spectral window 600 to 800 nm resulting from the interference of gap modes with white light broad band transmitted waves at the interface playing the role of the continuum. By varying the incident illumination angle shifts in the resonances give the possibility to couple or decouple the localized and delocalized modes and to induce a strong change of the asymmetric Fano profile. All these results were confirmed with a crossed comparison between experimental and theoretical measurements, confirming the nature of different modes. The high degree of control and tunability of this plasmonically rich system paves the way for designing and engineering of similar systems with numerous applications. In particular, sensing measurements were performed and a figure of merit of 3.8 was recorded ranking this sensor among the highest sensitive in this wavelength range. PMID:26399425

  14. Neutron Scattering Techniques in the Study of Phase Transitions.

    NASA Astrophysics Data System (ADS)

    Rogge, Ronald Benjamin

    The properties of thermal neutrons make them particularly adept for studies of condensed matter materials and the study of phase transitions in condensed matter systems. A variety of neutron scattering techniques have been employed to study the phase transitions in Cu_3Au and CsCoBr_3, which are representatives of the two principle types of phase transitions. The binary alloy Cu_3Au undergoes a first order phase transition from its low temperature ordered phase in which the atoms preferentially occupy the sites of a simple cubic lattice, to its high temperature disordered phase at 667 +/- 3K. Although a well studied system, the results reported in this thesis shall demonstrate that there is still much that can be learned from Cu_3Au. Within the context of the Landau theory of phase transitions, there exists, in addition to the order-disorder temperature, T_{c}, upper and lower spinodal temperatures, T_{su} and T_{sl}. These mark the first temperatures upon approaching the phase transition from above and below respectively, at which metastable droplets of the second phase can fluctuate out of the first phase. Until recently, there has however been little physical evidence supporting the existence of the spinodal temperatures. Elastic and inelastic neutron scattering measurements have been performed over an extended temperature range with an emphasis on temperatures near T_{c}. The lattice constant data, order-parameter data and phonon data provided by these measurements all indicate that there are two temperature regimes just below T_{c} with a crossover between these regimes in the range of T_{c}-35K to T _{c}-25K. This crossover temperature is interpreted as the lower spinodal temperature of Cu _3Au. CsCoBr_3 is believed to pass through at least two and possibly three magnetic phase transitions. The highest temperature transition is a second -order phase transition at approximately T_ {rm N1} = 28.3 +/- 0.1K. in the high temperature paramagnetic phase, the

  15. Magnetic quantum phase transitions and entropy in Van Vleck magnet

    NASA Astrophysics Data System (ADS)

    Lavanov, G. Yu.; Kalita, V. M.; Ivanova, I. M.; Loktev, V. M.

    2016-10-01

    Field-induced magnetic quantum phase transitions in the Van Vleck paramagnet with easy-plane single-ion anisotropy and competing Ising exchange between ions with the spin S=1 have been studied theoretically. The description was made by minimizing the Lagrange function at zero temperature (T=0) and the free energy at T ≠ 0 . Stable and unstable solutions of equations corresponding to the case ψ0 = | 0 > asymptotically transform into those following from the Lagrange function at T=0. First-order phase transitions from the Van Vleck paramagnet state into the ferromagnet one were found to take place at a sufficiently high single-ion anisotropy. The entropy of such a magnet was shown to grow with its magnetization, as it occurs for antiferromagnets. At the point of quantum phase transition, the entropy has a jump, which magnitude depends on the ratio between the Ising exchange and anisotropy constants, as well as on the temperature. The described magnetic phase transition was supposed to be accompanied by the magnetocaloric effect. In the case when the Ising exchange dominates over the single-ion anisotropy, the magnetization reversal of ferromagnetic state by an external field was shown to be a phase transition of the first kind, which does not belong to orientational ones and which should be regarded as a quantum order-order phase transition.

  16. Phase control of nonadiabatic optical transitions

    NASA Astrophysics Data System (ADS)

    Hashmi, F. A.; Bouchene, M. A.

    2009-02-01

    We theoretically study the interaction of two time delayed, phase-locked, and nonresonant pulses with a two-level system in the strong field regime. The population transfer is shown to be extremely sensitive to the phase shift ϕ between the pulses, with efficient population transfer taking place only for ϕ close to π . This effect is explained in terms of nonadiabatic jump and rapid adiabatic passage phenomena.

  17. Liquid-Liquid Phase Transition and Glass Transition in a Monoatomic Model System

    PubMed Central

    Xu, Limei; Buldyrev, Sergey V.; Giovambattista, Nicolas; Stanley, H. Eugene

    2010-01-01

    We review our recent study on the polyamorphism of the liquid and glass states in a monatomic system, a two-scale spherical-symmetric Jagla model with both attractive and repulsive interactions. This potential with a parametrization for which crystallization can be avoided and both the glass transition and the liquid-liquid phase transition are clearly separated, displays water-like anomalies as well as polyamorphism in both liquid and glassy states, providing a unique opportunity to study the interplay between the liquid-liquid phase transition and the glass transition. Our study on a simple model may be useful in understanding recent studies of polyamorphism in metallic glasses. PMID:21614201

  18. Quantum Phase Transition of 4He Confined in Nanoporous Media

    SciTech Connect

    Shirahama, Keiya

    2006-09-07

    4He confined in nanoporous media is an excellent model system for studying a strongly correlated Bose liquid and solid in a confinement potential. We studied superfluidity and liquid-solid phase transition of 4He confined in a porous Gelsil glass that had nanopores 2.5 nm in diameter. The obtained pressure-temperature phase diagram is fairly unprecedented: the superfluid transition temperature approaches zero at 3.4 MPa, and the freezing pressure is enhanced by approximately 1 MPa from the bulk one. These features indicate that the confined 4He undergoes a superfluid-nonsuperfluid-solid quantum phase transition at zero temperature. The nonsuperfluid phase may be a localized Bose-condensed state in which global phase coherence is destroyed by a strong correlation between the 4He atoms or by a random potential.

  19. Thermodynamic phase transitions in a frustrated magnetic metamaterial.

    PubMed

    Anghinolfi, L; Luetkens, H; Perron, J; Flokstra, M G; Sendetskyi, O; Suter, A; Prokscha, T; Derlet, P M; Lee, S L; Heyderman, L J

    2015-01-01

    Materials with interacting magnetic degrees of freedom display a rich variety of magnetic behaviour that can lead to novel collective equilibrium and out-of-equilibrium phenomena. In equilibrium, thermodynamic phases appear with the associated phase transitions providing a characteristic signature of the underlying collective behaviour. Here we create a thermally active artificial kagome spin ice that is made up of a large array of dipolar interacting nanomagnets and undergoes phase transitions predicted by microscopic theory. We use low energy muon spectroscopy to probe the dynamic behaviour of the interacting nanomagnets and observe peaks in the muon relaxation rate that can be identified with the critical temperatures of the predicted phase transitions. This provides experimental evidence that a frustrated magnetic metamaterial can be engineered to admit thermodynamic phases. PMID:26387444

  20. Thermodynamic phase transitions in a frustrated magnetic metamaterial

    PubMed Central

    Anghinolfi, L.; Luetkens, H.; Perron, J.; Flokstra, M. G.; Sendetskyi, O.; Suter, A.; Prokscha, T.; Derlet, P. M.; Lee, S. L.; Heyderman, L. J.

    2015-01-01

    Materials with interacting magnetic degrees of freedom display a rich variety of magnetic behaviour that can lead to novel collective equilibrium and out-of-equilibrium phenomena. In equilibrium, thermodynamic phases appear with the associated phase transitions providing a characteristic signature of the underlying collective behaviour. Here we create a thermally active artificial kagome spin ice that is made up of a large array of dipolar interacting nanomagnets and undergoes phase transitions predicted by microscopic theory. We use low energy muon spectroscopy to probe the dynamic behaviour of the interacting nanomagnets and observe peaks in the muon relaxation rate that can be identified with the critical temperatures of the predicted phase transitions. This provides experimental evidence that a frustrated magnetic metamaterial can be engineered to admit thermodynamic phases. PMID:26387444