Mask industry assessment: 2008

NASA Astrophysics Data System (ADS)

Hughes, Greg; Yun, Henry

2008-10-01

Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by David Powell Consulting to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of semiconductor company mask technologists, merchant mask suppliers, and industry equipment makers. This year's assessment is the seventh in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey is basically the same as the 2005 through 2007 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry.

Mask Industry Assessment: 2010

NASA Astrophysics Data System (ADS)

Hughes, Greg; Chan, David Y.

2010-09-01

A survey created supported by SEMATECH and administered by David Powell Consulting was sent to microelectronics industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the ninth in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. It will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey was basically the same as the 2005 through 2009 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the critical mask industry. This profile combined with the responses to past surveys represents a comprehensive view of changes in the industry.

Apparatus for assembly of microelectronic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okandan, Murat; Nielson, Gregory N.; Cruz-Campa, Jose Luis

An apparatus including a carrier substrate configured to move a microelectronic device. The apparatus further includes a rotatable body configured to receive the microelectronic device. Additionally, the apparatus includes a second substrate configured to receive the microelectronic device from the rotatable body.

Engineering brain-computer interfaces: past, present and future.

PubMed

Hughes, M A

2014-06-01

Electricity governs the function of both nervous systems and computers. Whilst ions move in polar fluids to depolarize neuronal membranes, electrons move in the solid-state lattices of microelectronic semiconductors. Joining these two systems together, to create an iono-electric brain-computer interface, is an immense challenge. However, such interfaces offer (and in select clinical contexts have already delivered) a method of overcoming disability caused by neurological or musculoskeletal pathology. To fulfill their theoretical promise, several specific challenges demand consideration. Rate-limiting steps cover a diverse range of disciplines including microelectronics, neuro-informatics, engineering, and materials science. As those who work at the tangible interface between brain and outside world, neurosurgeons are well placed to contribute to, and inform, this cutting edge area of translational research. This article explores the historical background, status quo, and future of brain-computer interfaces; and outlines the challenges to progress and opportunities available to the clinical neurosciences community.

Synthesis, Properties, and Applications Of Boron Nitride

NASA Technical Reports Server (NTRS)

Pouch, John J.; Alterovitz, Samuel A.

1993-01-01

Report describes synthesis, properties, and applications of boron nitride. Especially in thin-film form. Boron nitride films useful as masks in x-ray lithography; as layers for passivation of high-speed microelectronic circuits; insulating films; hard, wear-resistant, protective films for optical components; lubricants; and radiation detectors. Present status of single-crystal growth of boron nitride indicates promising candidate for use in high-temperature semiconductor electronics.

Wearable system-on-a-chip UWB radar for contact-less cardiopulmonary monitoring: present status.

PubMed

Zito, D; Pepe, D; Mincica, M; Zito, F; De Rossi, D; Lanata, A; Scilingo, E P; Tognetti, A

2008-01-01

The present status of the project aimed at the realization of an innovative wearable system-on-chip UWB radar for the cardiopulmonary monitoring is presented. The overall system consists of a wearable wireless interface including a fully integrated UWB radar for the detection of the heart beat and breath rates, and a IEEE 802.15.4 ZigBee low-power radio interface. The principle of operation of the UWB radar for the monitoring of the heart wall is summarized. With respect to the prior art, this paper reports the results of the experimental characterization of the intra-body channel loss, which has been carried out successfully in order to validate the theoretical model employed for the radar system analysis. Moreover, the main building blocks of the radar have been manufactured in 90 nm CMOS technology by ST-Microelectronics and the relevant performance are resulted in excellent agreement with those expected by post-layout simulations.

Moore's law and the impact on trusted and radiation-hardened microelectronics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Kwok Kee

2011-12-01

In 1965 Gordon Moore wrote an article claiming that integrated circuit density would scale exponentially. His prediction has remained valid for more than four decades. Integrated circuits have changed all aspects of everyday life. They are also the 'heart and soul' of modern systems for defense, national infrastructure, and intelligence applications. The United States government needs an assured and trusted microelectronics supply for military systems. However, migration of microelectronics design and manufacturing from the United States to other countries in recent years has placed the supply of trusted microelectronics in jeopardy. Prevailing wisdom dictates that it is necessary to usemore » microelectronics fabricated in a state-of-the-art technology for highest performance and military system superiority. Close examination of silicon microelectronics technology evolution and Moore's Law reveals that this prevailing wisdom is not necessarily true. This presents the US government the possibility of a totally new approach to acquire trusted microelectronics.« less

Mask industry assessment: 2009

NASA Astrophysics Data System (ADS)

Hughes, Greg; Yun, Henry

2009-10-01

Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by David Powell Consulting to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the eighth in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey is basically the same as the 2005 through 2008 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry. This in combination with the past surveys represents a comprehensive view of changes in the industry.

Radiation measurement in the environment of FLASH using passive dosimeters

NASA Astrophysics Data System (ADS)

Mukherjee, B.; Rybka, D.; Makowski, D.; Lipka, T.; Simrock, S.

2007-08-01

Sophisticated electronic devices comprising sensitive microelectronic components have been installed in the close proximity of the 720 MeV superconducting electron linear accelerator (linac) driving the FLASH (Free Electron Laser in Hamburg), presently in operation at DESY in Hamburg. Microelectronic chips are inherently vulnerable to ionizing radiation, usually generated during routine operation of high-energy particle accelerator facilities like the FLASH. Hence, in order to assess the radiation effect on microelectronic chips and to develop suitable mitigation strategy, it becomes imperative to characterize the radiation field in the FLASH environment. We have evaluated the neutron and gamma energy (spectra) and dose distributions at critical locations in the FLASH tunnel using superheated emulsion (bubble) detectors, GaAs light emitting diodes (LED), LiF-thermoluminescence dosimeters (TLD) and radiochromic (Gafchromic EBT) films. This paper highlights the application of passive dosimeters for an accurate analysis of the radiation field produced by high-energy electron linear accelerators.

QWIP status and future trends at Thales

NASA Astrophysics Data System (ADS)

Bois, P.; Guériaux, V.; Briere de l'Isle, N.; Manissadjian, A.; Facoetti, H.; Marcadet, X.; Costard, E.; Nedelcu, A.

2012-01-01

Since 2005, Thales is successfully manufacturing QWIPs in high rate production through III-V Lab. All the early claimed advantages of QWIPs are now demonstrated. The versatility of the band-gap engineering allows the custom design of detectors to fulfill specific application requirements in MWIR, LWIR or VLWIR ranges. The maturity of the III-V microelectronics based on GaAs substrates gives uniformity, stability and high production rate. In this presentation we will discuss the specific advantages of this type of detector. An overview of the available performances and production status will be presented including under-development products such as dual band and polarimetric sensors.

Goals, achievements of microelectronics program

NASA Astrophysics Data System (ADS)

Schronk, L.

1985-05-01

Besides reviewing the objectives of the government's microelectronics program, the Microelectronics Enterprise, the production of metal oxide semiconductors and bipolar integrated-circuit chips, specific research and development results to date, and the plans for future activity are discussed. Marketing and domestic demand are discussed.

CRRES microelectronics package flight data analysis

NASA Technical Reports Server (NTRS)

Stassinopoulos, E. G.; Brucker, G. J.; Stauffer, C. A.

1993-01-01

A detailed in-depth analysis was performed on the data from some of the CRRES MEP (Microelectronics Package) devices. These space flight measurements covered a period of about fourteen months of mission lifetime. Several types of invalid data were identified and corrections were made. Other problems were noted and adjustments applied, as necessary. Particularly important and surprising were observations of abnormal device behavior in many parts that could neither be explained nor correlated to causative events. Also, contrary to prevailing theory, proton effects appeared to be far more significant and numerous than cosmic ray effects. Another unexpected result was the realization that only nine out of thirty-two p-MOS dosimeters on the MEP indicated a valid operation. Comments, conclusions, and recommendations are given.

The Legacy of the Microelectronics Education Programme.

ERIC Educational Resources Information Center

Thorne, Michael

1987-01-01

Describes the Microelectronics Education Programme (MEP), a plan developed to help British secondary school students learn about microcomputers and the role of technology in society, and its successor, the Microelectronics Support Unit (MESU). Highlights include curriculum development, teacher training, computer assisted instruction and the…

Educational Implications of Microelectronics and Microprocessors.

ERIC Educational Resources Information Center

Harris, N. D. C., Ed.

This conference report explores microelectronic technology, its effect on educational methods and objectives, and its implications for educator responsibilities. Two main areas were considered: the significance of the likely impact of the large scale introduction of microprocessors and microelectronics on commercial and industrial processes, the…

A Survey of Current Trends in Master's Programs in Microelectronics

ERIC Educational Resources Information Center

Bozanic, Mladen; Sinha, Saurabh

2018-01-01

Contribution: This paper brings forward a paradigm shift in microelectronic and nanoelectronic engineering education. Background: An increasing number of universities are offering graduate-level electrical engineering degree programs with multi-disciplinary Master's-level specialization in microelectronics or nanoelectronics. The paradigm shift…

Microelectronics in Education

ERIC Educational Resources Information Center

Orton, Richard J. J.

2011-01-01

The history and meaning of the term "microelectronics" is reviewed, followed by a discussion of the key inventions of the Intel microprocessor in 1971 and the Texas Instruments electronic pocket calculator in 1975. The six characteristic features of microelectronic components are then defined. The UK prime minister Jim Callaghan's…

Microelectronics and Special Education. CET/MEP Information Sheet.

ERIC Educational Resources Information Center

Council for Educational Technology, London (England).

Used as an additional aid by the teacher, microelectronics can assist mentally and physically handicapped children to meet educational objectives that have been specifically agreed upon for the individual child. Microelectronics can help deaf children develop speech production, communication skills, and grammar and sentence construction;…

Microelectronics and Music Education.

ERIC Educational Resources Information Center

Hofstetter, Fred T.

1979-01-01

This look at the impact of microelectronics on computer-assisted instruction (CAI) in music notes trends toward new applications and lower costs. Included are: a rationale for CAI in music, a list of sample programs, comparison of five microelectronic music systems, PLATO cost projections, and sources of further information. (SJL)

Microelectronics in the Curriculum--The Science Teacher's Contribution.

ERIC Educational Resources Information Center

Association for Science Education, Cambridge (England).

Rapid advances in microelectronics over the past few years have generally been beneficial, but they have also created some problems, and questions must be asked about the philosophy for including aspects of the new technology in the school curriculum. This statement, prepared by the Microelectronics and Science Education Subcommittee of the…

Photovoltaic Power for Future NASA Missions

NASA Technical Reports Server (NTRS)

Landis, Geoffrey; Bailey, Sheila G.; Lyons, Valerie J. (Technical Monitor)

2002-01-01

Recent advances in crystalline solar cell technology are reviewed. Dual-junction and triple-junction solar cells are presently available from several U. S. vendors. Commercially available triple-junction cells consisting of GaInP, GaAs, and Ge layers can produce up to 27% conversion efficiency in production lots. Technology status and performance figures of merit for currently available photovoltaic arrays are discussed. Three specific NASA mission applications are discussed in detail: Mars surface applications, high temperature solar cell applications, and integrated microelectronic power supplies for nanosatellites.

Glass-to-Metal Seal Quality.

DTIC Science & Technology

1982-05-01

SELECTION AND EVALUATION . . . . . . . . . . . . . . 2 2.2 MICROELECTRONIC PACKAGES AND THEIR QUALITY . . . * . . . . . . . . 5 2.3 EQUIPMENT...liquid penetrant testing for various microelectronic package hermeticity. I t I MATERIALS AND EQUIPMENT 2.1 DYE PENETRANT SELECTION AND EVALUATION...a commercial visible dye penetrant and a commercial fluorescent dye penetrant were selected as being suitable for the testing of microelectronic

Development of a hybrid microelectronics solid state relay for 2500 volts isolation and minus 120 C to 80 C thermal cycling range

NASA Technical Reports Server (NTRS)

Sater, B. L.; Riley, T. J.; Janssen, W.

1973-01-01

A hybrid microelectronics solid state relay was developed in a TO-116 package for the MINX project. The relay provides 2500 Vdc input to output isolation and operated from a MHTL logic signal to switch a load of 400 Vdc at 2 mA. The relay is designed to operate in space and survive 1000 thermal cycles of 120 C to 80 C. The use of X-rays for failure analysis in small hybrid circuits proved valuable and the applications of vacuum deposited Parylene as a dielectric coating proved extremely valuable.

Microelectronics bioinstrumentation systems

NASA Technical Reports Server (NTRS)

Ko, W. H.

1977-01-01

Microelectronic bioinstrumentation systems to be employed in the Cardiovascular Deconditioning Program were developed. Implantable telemetry systems for long-term monitoring of animals on earth were designed to collect physiological data necessary for the understanding of the mechanisms of cardiovascular deconditioning. In-flight instrumentation systems, microelectronic instruments, and RF powering techniques for other life science experiments in the NASA program were studied.

Relevance of microelectronic education to industrial needs

NASA Technical Reports Server (NTRS)

Prince, J. L.; Lathrop, J. W.

1977-01-01

The relevance of microelectronic education to industrial needs was evaluated, and four categories were surveyed: (1) facts and rules; (2) skills; (3) personality; and (4) deductive-inductive reasoning. Examples of specific items in each category are given to illustrate their meaning and it was indicated as to which items in each category are strongly impacted by microelectronics courses and laboratories.

Bi-level microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2004-01-06

A package with an integral window for housing a microelectronic device. The integral window is bonded directly to the package without having a separate layer of adhesive material disposed in-between the window and the package. The device can be a semiconductor chip, CCD chip, CMOS chip, VCSEL chip, laser diode, MEMS device, or IMEMS device. The multilayered package can be formed of a LTCC or HTCC cofired ceramic material, with the integral window being simultaneously joined to the package during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded so that the light-sensitive side is optically accessible through the window. The package has at least two levels of circuits for making electrical interconnections to a pair of microelectronic devices. The result is a compact, low-profile package having an integral window that is hermetically sealed to the package prior to mounting and interconnecting the microelectronic device(s).

Single level microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2003-12-09

A package with an integral window for housing a microelectronic device. The integral window is bonded directly to the package without having a separate layer of adhesive material disposed in-between the window and the package. The device can be a semiconductor chip, CCD chip, CMOS chip, VCSEL chip, laser diode, MEMS device, or IMEMS device. The package can be formed of a multilayered LTCC or HTCC cofired ceramic material, with the integral window being simultaneously joined to the package during cofiring. The microelectronic device can be flip-chip interconnected so that the light-sensitive side is optically accessible through the window. A glob-top encapsulant or protective cover can be used to protect the microelectronic device and electrical interconnections. The result is a compact, low profile package having an integral window that is hermetically sealed to the package prior to mounting and interconnecting the microelectronic device.

Spreading devices into a 2-D module layout

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koplow, Jeffrey P.; Gupta, Vipin P.; Nielson, Gregory N.

An apparatus, method, and system, the apparatus including a receiving member dimensioned to receive an array of microelectronic devices; and a linkage member coupled to the receiving member, the linkage member configured to move the receiving member in at least two dimensions so as to modify a spacing between the electronic devices within the array of microelectronic devices received by the receiving member. The method including coupling an array of microelectronic devices to an expansion assembly; and expanding the expansion assembly so as to expand the array of microelectronic devices in at least two directions within a single plane. Themore » system including a support member; an expansion assembly coupled to the support member, the expansion assembly having a plurality of receiving members configured to move in at least two dimensions within a single plane; and a plurality of microelectronic devices coupled to each of the plurality of receiving members.« less

Photoemission-based microelectronic devices

PubMed Central

Forati, Ebrahim; Dill, Tyler J.; Tao, Andrea R.; Sievenpiper, Dan

2016-01-01

The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas or vacuum channel may scale their speed, wavelength and power beyond what is available today. However, liberating electrons into gas/vacuum in a practical microelectronic device is quite challenging. It often requires heating, applying high voltages, or using lasers with short wavelengths or high powers. Here, we show that the interaction between an engineered resonant surface and a low-power infrared laser can cause enough photoemission via electron tunnelling to implement feasible microelectronic devices such as transistors, switches and modulators. The proposed photoemission-based devices benefit from the advantages of gas-plasma/vacuum electronic devices while preserving the integrability of semiconductor-based devices. PMID:27811946

Trusted Defense Microelectronics: Future Access and Capabilities Are Uncertain

DTIC Science & Technology

2015-10-28

Board Task Force on High Performance Microchip Supply and documentation and discussions with industry and DOD officials in September and October...the defense and microelectronics industry . DOD’s review of this report deemed some of this information as sensitive but unclassified. What GAO...increased specialization and industry consolidation. • Once dominated by domestic sources, the supply chain for microelectronics manufacturing is a global one

Retinal Implants for Blind Patients

NASA Astrophysics Data System (ADS)

Rothermel, Albrecht

Recently, very promising results have been obtained in clinical trials with eye-prostheses for the blind. There is a chance that advances in surgical techniques, microelectronics design, and material science may lead to the first really useful applications of retinal implants in the near future. This chapter will focus on the actual status of subretinal surgery and implant technologies. Opportunities and limitations of the different technologies will be discussed in terms of patients benefit and technological challenges. Finally, a vision on how the devices may work and look like in the future will be given.

Coffee-can-sized spacecraft

NASA Technical Reports Server (NTRS)

Jones, Ross M.

1988-01-01

The current status and potential scientific applications of intelligent 1-5-kg projectiles being developed by SDIO and DARPA for military missions are discussed. The importance of advanced microelectronics for such small spacecraft is stressed, and it is pointed out that both chemical rockets and EM launchers are currently under consideration for these lightweight exoatmospheric projectiles (LEAPs). Long-duration power supply is identified as the primary technological change required if LEAPs are to be used for interplanetary scientific missions, and the design concept of a solar-powered space-based railgun to accelerate LEAPs on such missions is considered.

Protection of microelectronic devices during packaging

DOEpatents

Peterson, Kenneth A.; Conley, William R.

2002-01-01

The present invention relates to a method of protecting a microelectronic device during device packaging, including the steps of applying a water-insoluble, protective coating to a sensitive area on the device; performing at least one packaging step; and then substantially removing the protective coating, preferably by dry plasma etching. The sensitive area can include a released MEMS element. The microelectronic device can be disposed on a wafer. The protective coating can be a vacuum vapor-deposited parylene polymer, silicon nitride, metal (e.g. aluminum or tungsten), a vapor deposited organic material, cynoacrylate, a carbon film, a self-assembled monolayered material, perfluoropolyether, hexamethyldisilazane, or perfluorodecanoic carboxylic acid, silicon dioxide, silicate glass, or combinations thereof. The present invention also relates to a method of packaging a microelectronic device, including: providing a microelectronic device having a sensitive area; applying a water-insoluble, protective coating to the sensitive area; providing a package; attaching the device to the package; electrically interconnecting the device to the package; and substantially removing the protective coating from the sensitive area.

Temporary coatings for protection of microelectronic devices during packaging

DOEpatents

Peterson, Kenneth A.; Conley, William R.

2005-01-18

The present invention relates to a method of protecting a microelectronic device during device packaging, including the steps of applying a water-insoluble, temporary protective coating to a sensitive area on the device; performing at least one packaging step; and then substantially removing the protective coating, preferably by dry plasma etching. The sensitive area can include a released MEMS element. The microelectronic device can be disposed on a wafer. The protective coating can be a vacuum vapor-deposited parylene polymer, silicon nitride, metal (e.g. aluminum or tungsten), a vapor deposited organic material, cynoacrylate, a carbon film, a self-assembled monolayered material, perfluoropolyether, hexamethyldisilazane, or perfluorodecanoic carboxylic acid, silicon dioxide, silicate glass, or combinations thereof. The present invention also relates to a method of packaging a microelectronic device, including: providing a microelectronic device having a sensitive area; applying a water-insoluble, protective coating to the sensitive area; providing a package; attaching the device to the package; electrically interconnecting the device to the package; and substantially removing the protective coating from the sensitive area.

Modeling biology with HDL languages: a first step toward a genetic design automation tool inspired from microelectronics.

PubMed

Gendrault, Yves; Madec, Morgan; Lallement, Christophe; Haiech, Jacques

2014-04-01

Nowadays, synthetic biology is a hot research topic. Each day, progresses are made to improve the complexity of artificial biological functions in order to tend to complex biodevices and biosystems. Up to now, these systems are handmade by bioengineers, which require strong technical skills and leads to nonreusable development. Besides, scientific fields that share the same design approach, such as microelectronics, have already overcome several issues and designers succeed in building extremely complex systems with many evolved functions. On the other hand, in systems engineering and more specifically in microelectronics, the development of the domain has been promoted by both the improvement of technological processes and electronic design automation tools. The work presented in this paper paves the way for the adaptation of microelectronics design tools to synthetic biology. Considering the similarities and differences between the synthetic biology and microelectronics, the milestones of this adaptation are described. The first one concerns the modeling of biological mechanisms. To do so, a new formalism is proposed, based on an extension of the generalized Kirchhoff laws to biology. This way, a description of all biological mechanisms can be made with languages widely used in microelectronics. Our approach is therefore successfully validated on specific examples drawn from the literature.

Image analysis for microelectronic retinal prosthesis.

PubMed

Hallum, L E; Cloherty, S L; Lovell, N H

2008-01-01

By way of extracellular, stimulating electrodes, a microelectronic retinal prosthesis aims to render discrete, luminous spots-so-called phosphenes-in the visual field, thereby providing a phosphene image (PI) as a rudimentary remediation of profound blindness. As part thereof, a digital camera, or some other photosensitive array, captures frames, frames are analyzed, and phosphenes are actuated accordingly by way of modulated charge injections. Here, we present a method that allows the assessment of image analysis schemes for integration with a prosthetic device, that is, the means of converting the captured image (high resolution) to modulated charge injections (low resolution). We use the mutual-information function to quantify the amount of information conveyed to the PI observer (device implantee), while accounting for the statistics of visual stimuli. We demonstrate an effective scheme involving overlapping, Gaussian kernels, and discuss extensions of the method to account for shortterm visual memory in observers, and their perceptual errors of omission and commission.

A microelectronics approach for the ROSETTA surface science package

NASA Technical Reports Server (NTRS)

Sandau, Rainer (Editor); Alkalaj, Leon

1996-01-01

In relation to the Rosetta surface science package, the benefits of the application of advanced microelectronics packaging technologies and other output from the Mars environmental survey (MESUR) integrated microelectronics study are reported on. The surface science package will be designed to operate for tens of hours. Its limited mass and power consumption make necessary a highly integrated design with all the instruments and subunits operated from a centralized control and information management subsystem.

Electric Field Control of Magnetism Using BiFeO3-Based Heterostructures

DTIC Science & Technology

2014-04-22

dissipation in the form of heat has become a center stage issue for the microelectronics industry. By taking advantage of the strong correlations...speed and storage density, significant energy dissipation in the form of heat has become a center stage issue for the microelectronics industry. By...and storage density, significant energy dissipation in the form of heat has become a center stage issue for the microelectronics industry. By taking

Reproductive Hazards Still Persist in the Microelectronics Industry: Increased Risk of Spontaneous Abortion and Menstrual Aberration among Female Workers in the Microelectronics Industry in South Korea.

PubMed

Kim, Inah; Kim, Myoung-Hee; Lim, Sinye

2015-01-01

Despite the global expansion of supply chains and changes to the production process, few studies since the mid-1990 s and 2000s have examined reproductive risks of the microelectronics industry; we examined the reproductive risks among female microelectronics workers in South Korea. Based on claim data from the National Health Insurance (2008-2012), we estimated age-specific rates of spontaneous abortion (SAB) and menstrual aberration (MA) among women aged 20 to 39 years. We compared data between microelectronics workers and three different control groups: economically inactive women, the working population as a whole, and workers employed in the bank industry. For an effect measure, age-stratified relative risks (RRs) were estimated. Female workers in the microelectronics industry showed significantly higher risk for SAB and MA compared to control groups. The RRs for SAB with reference to economically inactive women, working population, and bank workers in their twenties were 1.57, 1.40, and 1.37, respectively, and the RRs for MA among females in their twenties were 1.54, 1.38, and 1.48, respectively. For women in their thirties, RRs for SAB were 1.58, 1.67, and 1.13, and those for MA were 1.25, 1.35, and 1.23 compared to the three control populations, respectively. All RRs were statistically significant at a level of 0.05, except for the SAB case comparison with bank workers in their thirties. Despite technical innovations and health and safety measures, female workers in microelectronics industry in South Korea have high rates of SAB and MA, suggesting continued exposure to reproductive hazards. Further etiologic studies based on primary data collection and careful surveillance are required to confirm these results.

Microelectronics and nanotechnology, and the fractal-like structure of information, knowledge, and science

NASA Astrophysics Data System (ADS)

Nutu, Catalin Silviu; Axinte, Tiberiu

2016-12-01

The article is centralizing and is concentrating the information from a considerable amount of papers related to the field of microelectronics and nanotechnology and also provides an approach to science and to the future evolution of science, based on the theory of the fractals. The new science of microelectronics and nanotechnology is one of the best examples of how the science of future will look like, namely at the confluence of increasingly more other sciences, where increasingly more sciences are to be added in the structure of the new science and the role of the multidisciplinary and interdisciplinary is becoming more and more important. Although not giving explicit details (e.g. specific formulas) the theory of fractals is used in the paper to explain the way of generation of new science for the specific case of microelectronics and nanotechnology, but is also used in the paper to outline a different way to approach new science and eventually to approach new sciences to come. There are mainly two motivations for the present article, namely: on the one hand, the position of the microelectronics and nanotechnologies in the fractal-like structure of science, and, on the other hand, that much of the communication, information, knowledge and science transfer, dissemination and advancement in sciences are taking place using the new technologies related to microelectronics and nanotechnologies.

Multilayered Microelectronic Device Package With An Integral Window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2004-10-26

A microelectronic package with an integral window mounted in a recessed lip for housing a microelectronic device. The device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can be formed of a low temperature co-fired ceramic (LTCC) or high temperature cofired ceramic (HTCC) multilayered material, with the integral window being simultaneously joined (e.g. co-fired) to the package body during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded and oriented so that a light-sensitive side is optically accessible through the window. The result is a compact, low profile package, having an integral window mounted in a recessed lip, that can be hermetically sealed.

Center for Space Microelectronics Technology. 1993 Technical Report

NASA Technical Reports Server (NTRS)

1995-01-01

The 1993 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 170 publications, 193 presentations, and 84 New Technology Reports and patents. The 1993 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 170 publications, 193 presentations, and 84 New Technology Reports and patents.

Towards co-packaging of photonics and microelectronics in existing manufacturing facilities

NASA Astrophysics Data System (ADS)

Janta-Polczynski, Alexander; Cyr, Elaine; Bougie, Jerome; Drouin, Alain; Langlois, Richard; Childers, Darrell; Takenobu, Shotaro; Taira, Yoichi; Lichoulas, Ted W.; Kamlapurkar, Swetha; Engelmann, Sebastian; Fortier, Paul; Boyer, Nicolas; Barwicz, Tymon

2018-02-01

The impact of integrated photonics on optical interconnects is currently muted by challenges in photonic packaging and in the dense integration of photonic modules with microelectronic components on printed circuit boards. Single mode optics requires tight alignment tolerance for optical coupling and maintaining this alignment in a cost-efficient package can be challenging during thermal excursions arising from downstream microelectronic assembly processes. In addition, the form factor of typical fiber connectors is incompatible with the dense module integration expected on printed circuit boards. We have implemented novel approaches to interfacing photonic chips to standard optical fibers. These leverage standard high throughput microelectronic assembly tooling and self-alignment techniques resulting in photonic packaging that is scalable in manufacturing volume and in the number of optical IOs per chip. In addition, using dense optical fiber connectors with space-efficient latching of fiber patch cables results in compact module size and efficient board integration, bringing the optics closer to the logic chip to alleviate bandwidth bottlenecks. This packaging direction is also well suited for embedding optics in multi-chip modules, including both photonic and microelectronic chips. We discuss the challenges and rewards in this type of configuration such as thermal management and signal integrity.

Physical Limitations in Lithography for Microelectronics.

ERIC Educational Resources Information Center

Flavin, P. G.

1981-01-01

Describes techniques being used in the production of microelectronics kits which have replaced traditional optical lithography, including contact and optical projection printing, and X-ray and electron beam lithography. Also includes limitations of each technique described. (SK)

Design, processing and testing of LSI arrays, hybrid microelectronics task

NASA Technical Reports Server (NTRS)

Himmel, R. P.; Stuhlbarg, S. M.; Ravetti, R. G.; Zulueta, P. J.; Rothrock, C. W.

1979-01-01

Mathematical cost models previously developed for hybrid microelectronic subsystems were refined and expanded. Rework terms related to substrate fabrication, nonrecurring developmental and manufacturing operations, and prototype production are included. Sample computer programs were written to demonstrate hybrid microelectric applications of these cost models. Computer programs were generated to calculate and analyze values for the total microelectronics costs. Large scale integrated (LST) chips utilizing tape chip carrier technology were studied. The feasibility of interconnecting arrays of LSU chips utilizing tape chip carrier and semiautomatic wire bonding technology was demonstrated.

Reproductive Hazards Still Persist in the Microelectronics Industry: Increased Risk of Spontaneous Abortion and Menstrual Aberration among Female Workers in the Microelectronics Industry in South Korea

PubMed Central

Kim, Inah; Kim, Myoung-Hee; Lim, Sinye

2015-01-01

Objectives Despite the global expansion of supply chains and changes to the production process, few studies since the mid-1990s and 2000s have examined reproductive risks of the microelectronics industry; we examined the reproductive risks among female microelectronics workers in South Korea. Methods Based on claim data from the National Health Insurance (2008–2012), we estimated age-specific rates of spontaneous abortion (SAB) and menstrual aberration (MA) among women aged 20 to 39 years. We compared data between microelectronics workers and three different control groups: economically inactive women, the working population as a whole, and workers employed in the bank industry. For an effect measure, age-stratified relative risks (RRs) were estimated. Results Female workers in the microelectronics industry showed significantly higher risk for SAB and MA compared to control groups. The RRs for SAB with reference to economically inactive women, working population, and bank workers in their twenties were 1.57, 1.40, and 1.37, respectively, and the RRs for MA among females in their twenties were 1.54, 1.38, and 1.48, respectively. For women in their thirties, RRs for SAB were 1.58, 1.67, and 1.13, and those for MA were 1.25, 1.35, and 1.23 compared to the three control populations, respectively. All RRs were statistically significant at a level of 0.05, except for the SAB case comparison with bank workers in their thirties. Conclusions Despite technical innovations and health and safety measures, female workers in microelectronics industry in South Korea have high rates of SAB and MA, suggesting continued exposure to reproductive hazards. Further etiologic studies based on primary data collection and careful surveillance are required to confirm these results. PMID:25938673

Stroboscopic Imaging Interferometer for MEMS Performance Measurement

DTIC Science & Technology

2007-07-15

Optical Iocusing L.aser Fiber Optics I) c 0 Mim er Collimator - C d Microcope lcam. indo Cold Objcclive Splitte FingerCCD "Mount irnro MEMS PicL zStack...Electronics and Photonics Laboratory: Microelectronics, VLSI reliability, failure analysis, solid-state device physics, compound semiconductors

Superconducting Microelectronics.

ERIC Educational Resources Information Center

Henry, Richard W.

1984-01-01

Discusses superconducting microelectronics based on the Josephson effect and its advantages over conventional integrated circuits in speed and sensitivity. Considers present uses in standards laboratories (voltage) and in measuring weak magnetic fields. Also considers future applications in superfast computer circuitry using Superconducting…

Evidence for adverse reproductive outcomes among women microelectronic assembly workers.

PubMed Central

Huel, G; Mergler, D; Bowler, R

1990-01-01

Microelectronics assembly entails complex processes where several potentially fetotoxic chemical compounds are used extensively. This study was undertaken to assess the potential adverse reproductive outcomes among former women workers in a microelectronics assembly plant in New Mexico with respect to a comparable population from the same geographical region and to examine the relation between these outcomes and employment history in this plant. After matching a pool of 143 former microelectronic female workers and 105 referents, 90 former microelectronic female worker-referent pairs were constituted (representing 302 and 324 pregnancies in former workers and referents respectively). The odds ratio (for pair matching design) of spontaneous abortion among women workers, before beginning to assemble microelectronic components, was 0.9 (chi 2 = 0.04; NS). After the beginning of employment this odds ratio became 5.6 (chi 2 = 9.8; p less than 1%). This estimated odds ratio decreased to 4.0, taking into account the increased risk for spontaneous abortion in previous pregnancies before employment (chi 2 = 5.4; p less than 5%). It was not possible to determine if this effect was reversible owing to the small number of pairs available after employment. The findings of this study corroborate the results of former studies that suggest a potential association between electronic manufacturing activity and risk of spontaneous abortion. Although the organic solvents were suspected of being the potential risk factor, this study was inconclusive from this point of view. Nevertheless, these investigations may provide some insight into reproductive outcomes among female workers exposed to solvents. PMID:2378817

Center for Space Microelectronics Technology 1988-1989 technical report

NASA Technical Reports Server (NTRS)

Olsen, Peggy

1990-01-01

The 1988 to 1989 Technical Report of the JPL Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center. Listed are 321 publications, 282 presentations, and 140 new technology reports and patents.

Center for Space Microelectronics Technology

NASA Technical Reports Server (NTRS)

1991-01-01

The 1990 technical report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center during 1990. The report lists 130 publications, 226 presentations, and 87 new technology reports and patents.

Center for Space Microelectronics Technology

NASA Technical Reports Server (NTRS)

1992-01-01

The 1991 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 193 publications, 211 presentations, and 125 new technology reports and patents.

The Strength of the Metal. Aluminum Oxide Interface

NASA Technical Reports Server (NTRS)

Pepper, S. V.

1984-01-01

The strength of the interface between metals and aluminum oxide is an important factor in the successful operation of devices found throughout modern technology. One finds the interface in machine tools, jet engines, and microelectronic integrated circuits. The strength of the interface, however, should be strong or weak depending on the application. The diverse technological demands have led to some general ideas concerning the origin of the interfacial strength, and have stimulated fundamental research on the problem. Present status of our understanding of the source of the strength of the metal - aluminum oxide interface in terms of interatomic bonds are reviewed. Some future directions for research are suggested.

Effect of Grain Boundary Misorientation on Electromigration in Lead-Free Solder Joints

NASA Astrophysics Data System (ADS)

Tasooji, Amaneh; Lara, Leticia; Lee, Kyuoh

2014-12-01

Reduction in microelectronic interconnect size gives rise to solder bumps consisting of few grains, approaching a single- or bicrystal grain morphology in C4 bumps. Single grain anisotropy, individual grain orientation, presence of easy diffusion paths along grain boundaries, and the increased current density in these small solder bumps aggravate electromigration. This reduces the reliability of the entire microelectronic system. This paper focuses on electromigration behavior in Pb-free solder, specifically the Sn-0.7 wt.%Cu alloy. We discuss the effects of texture, grain orientation, and grain boundary misorientation angle on electromigration (EM) and intermetallic compound formation in EM-tested C4 bumps. The detailed electron backscatter diffraction (EBSD) analysis used in this study reveals the greater influence of grain boundary misorientation on solder bump electromigration compared with the effect associated with individual grain orientation.

Labour-Saving versus Work-Amplifying Effects of Micro-Electronics.

ERIC Educational Resources Information Center

Watanabe, Susumu

1986-01-01

This article argues that the labor-displacement effect of microelectronic machinery, especially numerically controlled machine tools and robots, has been exaggerated and that people tend to confuse the impact of intensified international competition with that of the new technology. (Author/CT)

Microelectronics and Computers in Medicine.

ERIC Educational Resources Information Center

Meindl, James D.

1982-01-01

The use of microelectronics and computers in medicine is reviewed, focusing on medical research; medical data collection, storage, retrieval, and manipulation; medical decision making; computed tomography; ultrasonic imaging; role in clinical laboratories; and use as adjuncts for diagnostic tests, monitors of critically-ill patients, and with the…

Proceedings of the International Conference on Vacuum Microelectronics (2nd) Held in Bath England on 24-26 July 1989: Vacuum Microelectronics

DTIC Science & Technology

1989-07-26

resulting Laplacian matrix. This © 1989 lOP Publishing Ltd l • m m i m mIlia ItoI 110 Vacuum microelectronics 89 approach does not easily yield accurate...Schottky diodes p-InP-Ag A L Musatov, S L Filippov and VL Korotkikh 57-60 Stimulated cold-cathode emission from metal electrodes coated with Langmuir...quantum transport K L Jensen and FA Buot 141-144 Silicon cold cathodes based on PIN diodes P A M van der Heide, G G P van Gorkom, A M E Hoeberechts, A A

Comparative Advantages in Microelectronics,

DTIC Science & Technology

The initial point of departure for analyzing comparative advantages in microelectronics is to make certain explicit assumptions. First, technology...changes conditions but does not determine comparative advantages . Secondly, the entire industrial infrastructure is becoming increasingly abstract...that informatics will profoundly affect the productive infrastructure and the international division of labour.

76 FR 10395 - BreconRidge Manufacturing Solutions, Now Known as Sanmina-SCI Corporation, Division...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-02-24

... Solutions, Now Known as Sanmina-SCI Corporation, Division Optoelectronic and Microelectronic Design and Manufacturing, a Subsidiary of Sanmina-SCI Corporation, Including On- Site Leased Workers From Kelly Services... Manufacturing Solutions, now known as Sanmina-SCI Corporation, Division Optoelectronic and Microelectronic...

Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications.

PubMed

Sung, Ho-Kun; Qiang, Tian; Yao, Zhao; Li, Yang; Wu, Qun; Lee, Hee-Kwan; Park, Bum-Doo; Lim, Woong-Sun; Park, Kyung-Ho; Wang, Cong

2017-06-20

This study presents a detailed fabrication method, together with validation, discussion, and analysis, for state-of-the-art silicon carbide (SiC) etching of vertical and bevelled structures by using inductively coupled plasma reactive ion etching (ICP-RIE) for microelectronic applications. Applying different gas mixtures, a maximum bevel angle of 87° (almost vertical), large-angle bevels ranging from 40° to 80°, and small-angel bevels ranging from 7° to 17° were achieved separately using distinct gas mixtures at different ratios. We found that SF 6 with additive O 2 was effective for vertical etching, with a best etching rate of 3050 Å/min. As for the large-angle bevel structures, BCl 3  + N 2 gas mixtures show better characteristics, exhibiting a controllable and large etching angle range from 40° to 80° through the adjustment of the mixture ratio. Additionally, a Cl 2  + O 2 mixture at different ratios is applied to achieve a small-angel bevels ranging from 7° to 17°. A minimum bevel angel of approximately 7° was achieved under the specific volume of 2.4 sccm Cl 2 and 3.6 sccm O 2 . These results can be used to improve performance in various microelectronic applications including MMIC via holes, PIN diodes, Schottky diodes, JFETs' bevel mesa, and avalanche photodiode fabrication.

Government Microelectronics Assessment for Trust (GOMAT)

NASA Technical Reports Server (NTRS)

Berg, Melanie D.; LaBel, Kenneth A.

2018-01-01

NASA Electronic Parts and Packaging (NEPP) is developing a process to be employed in critical applications. The framework assesses levels of trust and assurance in microelectronic systems. The process is being created with participation from a variety of organizations. We present a synopsis of the framework that includes contributions from The Aerospace Corporation.

Reparable, high-density microelectronic module provides effective heat sink

NASA Technical Reports Server (NTRS)

Carlson, K. J.; Maytone, F. F.

1967-01-01

Reparable modular system is used for packaging microelectronic flat packs and miniature discrete components. This three-dimensional compartmented structure incorporates etched phosphor bronze sheets and frames with etched wire conductors. It provides an effective heat sink for electric power dissipation in the absence of convective cooling means.

Managing the Manpower Aspects of Applying Micro-Electronics Technology.

ERIC Educational Resources Information Center

Thornton, P.; Routledge, C.

1980-01-01

Outlines major effects that the application of micro-electronics devices in products/processes and in office systems will have on future manpower and skill requirements in manufacturing organizations. Identifies the type of problems these changes will pose for manpower managers. Provides general guidelines for the successful management of these…

Teaching and Learning in a Microelectronic Age.

ERIC Educational Resources Information Center

Shane, Harold G.

General background information on microtechnologies with implications for educators provides an introduction to this review of past and current developments in microelectronics and specific ways in which the microchip is permeating society, creating problems and opportunities both in the workplace and the home. Topics discussed in the first of two…

The Impact of Technology on Hawaii's Automotive Mechanics: An Analysis with Recommendations. Technological Impact Study Series.

ERIC Educational Resources Information Center

Allen, Robert

Because of the increasing use of microelectronic componentry in automobiles, vocational educators must reexamine existing automotive mechanics curricula to ensure that they can continue to provide relevant job training. After examining recent trends in the impact of computers and electronics on automotive design and engineering, existing auto…

A Wireless Multi-Sensor Dielectric Impedance Spectroscopy Platform

PubMed Central

Ghaffari, Seyed Alireza; Caron, William-O.; Loubier, Mathilde; Rioux, Maxime; Viens, Jeff; Gosselin, Benoit; Messaddeq, Younes

2015-01-01

This paper describes the development of a low-cost, miniaturized, multiplexed, and connected platform for dielectric impedance spectroscopy (DIS), designed for in situ measurements and adapted to wireless network architectures. The platform has been tested and used as a DIS sensor node on ZigBee mesh and was able to interface up to three DIS sensors at the same time and relay the information through the network for data analysis and storage. The system is built from low-cost commercial microelectronics components, performs dielectric spectroscopy ranging from 5 kHz to 100 kHz, and benefits from an on-the-fly calibration system that makes sensor calibration easy. The paper describes the microelectronics design, the Nyquist impedance response, the measurement sensitivity and accuracy, and the testing of the platform for in situ dielectric impedance spectroscopy applications pertaining to fertilizer sensing, water quality sensing, and touch sensing. PMID:26393587

The RACE (R&D in Advanced Communications Technologies for Europe) Program of the European Communities

DTIC Science & Technology

1988-08-17

asynchronous TDM for all channels; and hybrid solu- However, since technoeconomic considerations may im- tions, possibly involving dynamic rearranging. A...qualitative electronic switching are favored: CMOS, silicon bipolar, analysis , under the headings: timing of introduction, net- and gallium arsenide...or ring configurations. tem requirements. Project 1029. In this project an up-to-date analysis Microelectronic Components was made of the state of the

Impact of Spacecraft Shielding on Direct Ionization Soft Error Rates for sub-130 nm Technologies

NASA Technical Reports Server (NTRS)

Pellish, Jonathan A.; Xapsos, Michael A.; Stauffer, Craig A.; Jordan, Michael M.; Sanders, Anthony B.; Ladbury, Raymond L.; Oldham, Timothy R.; Marshall, Paul W.; Heidel, David F.; Rodbell, Kenneth P.

2010-01-01

We use ray tracing software to model various levels of spacecraft shielding complexity and energy deposition pulse height analysis to study how it affects the direct ionization soft error rate of microelectronic components in space. The analysis incorporates the galactic cosmic ray background, trapped proton, and solar heavy ion environments as well as the October 1989 and July 2000 solar particle events.

Impact of Spacecraft Shielding on Direct Ionization Soft Error Rates for Sub-130 nm Technologies

NASA Technical Reports Server (NTRS)

Pellish, Jonathan A.; Xapsos, Michael A.; Stauffer, Craig A.; Jordan, Thomas M.; Sanders, Anthony B.; Ladbury, Raymond L.; Oldham, Timothy R.; Marshall, Paul W.; Heidel, David F.; Rodbell, Kenneth P.

2010-01-01

We use ray tracing software to model various levels of spacecraft shielding complexity and energy deposition pulse height analysis to study how it affects the direct ionization soft error rate of microelectronic components in space. The analysis incorporates the galactic cosmic ray background, trapped proton, and solar heavy ion environments as well as the October 1989 and July 2000 solar particle events.

Sparsity-Based Super Resolution for SEM Images.

PubMed

Tsiper, Shahar; Dicker, Or; Kaizerman, Idan; Zohar, Zeev; Segev, Mordechai; Eldar, Yonina C

2017-09-13

The scanning electron microscope (SEM) is an electron microscope that produces an image of a sample by scanning it with a focused beam of electrons. The electrons interact with the atoms in the sample, which emit secondary electrons that contain information about the surface topography and composition. The sample is scanned by the electron beam point by point, until an image of the surface is formed. Since its invention in 1942, the capabilities of SEMs have become paramount in the discovery and understanding of the nanometer world, and today it is extensively used for both research and in industry. In principle, SEMs can achieve resolution better than one nanometer. However, for many applications, working at subnanometer resolution implies an exceedingly large number of scanning points. For exactly this reason, the SEM diagnostics of microelectronic chips is performed either at high resolution (HR) over a small area or at low resolution (LR) while capturing a larger portion of the chip. Here, we employ sparse coding and dictionary learning to algorithmically enhance low-resolution SEM images of microelectronic chips-up to the level of the HR images acquired by slow SEM scans, while considerably reducing the noise. Our methodology consists of two steps: an offline stage of learning a joint dictionary from a sequence of LR and HR images of the same region in the chip, followed by a fast-online super-resolution step where the resolution of a new LR image is enhanced. We provide several examples with typical chips used in the microelectronics industry, as well as a statistical study on arbitrary images with characteristic structural features. Conceptually, our method works well when the images have similar characteristics, as microelectronics chips do. This work demonstrates that employing sparsity concepts can greatly improve the performance of SEM, thereby considerably increasing the scanning throughput without compromising on analysis quality and resolution.

Scaled CMOS Technology Reliability Users Guide

NASA Technical Reports Server (NTRS)

White, Mark

2010-01-01

The desire to assess the reliability of emerging scaled microelectronics technologies through faster reliability trials and more accurate acceleration models is the precursor for further research and experimentation in this relevant field. The effect of semiconductor scaling on microelectronics product reliability is an important aspect to the high reliability application user. From the perspective of a customer or user, who in many cases must deal with very limited, if any, manufacturer's reliability data to assess the product for a highly-reliable application, product-level testing is critical in the characterization and reliability assessment of advanced nanometer semiconductor scaling effects on microelectronics reliability. A methodology on how to accomplish this and techniques for deriving the expected product-level reliability on commercial memory products are provided.Competing mechanism theory and the multiple failure mechanism model are applied to the experimental results of scaled SDRAM products. Accelerated stress testing at multiple conditions is applied at the product level of several scaled memory products to assess the performance degradation and product reliability. Acceleration models are derived for each case. For several scaled SDRAM products, retention time degradation is studied and two distinct soft error populations are observed with each technology generation: early breakdown, characterized by randomly distributed weak bits with Weibull slope (beta)=1, and a main population breakdown with an increasing failure rate. Retention time soft error rates are calculated and a multiple failure mechanism acceleration model with parameters is derived for each technology. Defect densities are calculated and reflect a decreasing trend in the percentage of random defective bits for each successive product generation. A normalized soft error failure rate of the memory data retention time in FIT/Gb and FIT/cm2 for several scaled SDRAM generations is presented revealing a power relationship. General models describing the soft error rates across scaled product generations are presented. The analysis methodology may be applied to other scaled microelectronic products and their key parameters.

REVIEW ARTICLE: How will physics be involved in silicon microelectronics

NASA Astrophysics Data System (ADS)

Kamarinos, Georges; Felix, Pierre

1996-03-01

By the year 2000 electronics will probably be the basis of the largest industry in the world. Silicon microelectronics will continue to keep a dominant place covering 99% of the `semiconductor market'. The aim of this review article is to indicate for the next decade the domains in which research work in `physics' is needed for a technological advance towards increasing speed, complexity and density of silicon ultra large scale integration (ULSI) integrated circuits (ICs). By `physics' we mean here not only condensed matter physics but also the basic physical chemistry and thermodynamics. The review begins with a brief and general introduction in which we elucidate the current state of the art and the trends in silicon microelectronics. Afterwards we examine the involvement of physics in silicon microelectronics in the two main sections. The first section concerns the processes of fabrication of ICs: lithography, oxidation, diffusion, chemical and physical vapour deposition, rapid thermal processing, etching, interconnections, ultra-clean processing and microcontamination. The second section concerns the electrical operation of the ULSI devices. It defines the integration scales and points out the importance of the intermediate scale of integration which is the scale of the next generation of ICs. The emergence of cryomicroelectronics is also reviewed and an extended paragraph is dedicated to the problem of reliability and ageing of devices and ICs: hot carrier degradation, interdevice coupling and noise are considered. It is shown, during our analysis, that the next generation of silicon ICs needs mainly: (i) `scientific' fabrication and (ii) microscopic modelling and simulation of the electrical characteristics of the scaled down devices. To attain the above objectives a return to the `first principles' of physics as well as a recourse to nonlinear and non-equilibrium thermodynamics are mandatory. In the references we list numerous review papers and references of specialized colloquia proceedings so that a more detailed survey of the subject is possible for the reader.

Fiber Laser methane sensor with the function of self-diagnose

NASA Astrophysics Data System (ADS)

Li, Yan-fang; Wei, Yu-bin; Shang, Ying; Wang, Chang; Liu, Tong-yu

2012-02-01

Using the technology of tunable diode laser absorption spectroscopy and the technology of micro-electronics, a fiber laser methane sensor based on the microprocessor C8051F410 is given. In this paper, we use the DFB Laser as the light source of the sensor. By tuning temperature and driver current of the DFB laser, we can scan the laser over the methane absorption line, Based on the Beer-Lambert law, through detect the variation of the light power before and after the absorption we realize the methane detection. It makes the real-time and online detection of methane concentration to be true, and it has the advantages just as high accuracy, immunity to other gases , long calibration cycle and so on. The sensor has the function of adaptive gain and self-diagnose. By introducing digital potentiometers, the gain of the photoelectric conversion operational amplifier can be controlled by the microprocessor according to the light power. When the gain and the conversion voltage achieve the set value, then we can consider the sensor in a fault status, and then the software will alarm us to check the status of the probe. So we improved the dependence and the stability of the measured results. At last we give some analysis on the sensor according the field application and according the present working, we have a look of our next work in the distance.

Application of analytical redundancy management to Shuttle crafts. [computerized simulation of microelectronic implementation

NASA Technical Reports Server (NTRS)

Montgomery, R. C.; Tabak, D.

1979-01-01

The study involves the bank of filters approach to analytical redundancy management since this is amenable to microelectronic implementation. Attention is given to a study of the UD factorized filter to determine if it gives more accurate estimates than the standard Kalman filter when data processing word size is reduced. It is reported that, as the word size is reduced, the effect of modeling error dominates the filter performance of the two filters. However, the UD filter is shown to maintain a slight advantage in tracking performance. It is concluded that because of the UD filter's stability in the serial processing mode, it remains the leading candidate for microelectronic implementation.

Designing a chevron unit for a microelectronic position-sensitive detector with two microchannel plates

NASA Astrophysics Data System (ADS)

Kosulya, A. V.; Verbitskii, V. G.

2017-09-01

The dependence of the transverse section of an electron beam on the distance between plates and on the accelerating potential difference is determined for a chevron unit of a microelectronic position-sensitive detector (MPSD) with two microchannel plates. The geometry of the MPSD chevron unit is designed and optimized.

Microelectronic Information Processing Systems: Computing Systems. Summary of Awards Fiscal Year 1994.

ERIC Educational Resources Information Center

National Science Foundation, Arlington, VA. Directorate for Computer and Information Science and Engineering.

The purpose of this summary of awards is to provide the scientific and engineering communities with a summary of the grants awarded in 1994 by the National Science Foundation's Division of Microelectronic Information Processing Systems. Similar areas of research are grouped together. Grantee institutions and principal investigators are identified…

Complex VLSI Feature Comparison for Commercial Microelectronics Verification

DTIC Science & Technology

2014-03-27

69 4.2.4 Circuit E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 4.3 Summary...used for high-performance consumer microelectronics. Volume is a significant factor in constraining the technology limit for defense circuits, but it...surveyed in a 2010 Department of Commerce report found counterfeit chips difficult to identify due to improved fabrication quality in overseas counterfeit

Center for space microelectronics technology

NASA Technical Reports Server (NTRS)

1993-01-01

The 1992 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center during the past year. The report lists 187 publications, 253 presentations, and 111 new technology reports and patents in the areas of solid-state devices, photonics, advanced computing, and custom microcircuits.

The large scale microelectronics Computer-Aided Design and Test (CADAT) system

NASA Technical Reports Server (NTRS)

Gould, J. M.

1978-01-01

The CADAT system consists of a number of computer programs written in FORTRAN that provide the capability to simulate, lay out, analyze, and create the artwork for large scale microelectronics. The function of each software component of the system is described with references to specific documentation for each software component.

Monitoring Composite Material Pressure Vessels with a Fiber-Optic/Microelectronic Sensor System

NASA Technical Reports Server (NTRS)

Klimcak, C.; Jaduszliwer, B.

1995-01-01

We discuss the concept of an integrated, fiber-optic/microelectronic distributed sensor system that can monitor composite material pressure vessels for Air Force space systems to provide assessments of the overall health and integrity of the vessel throughout its entire operating history from birth to end of life. The fiber optic component would include either a semiconductor light emitting diode or diode laser and a multiplexed fiber optic sensing network incorporating Bragg grating sensors capable of detecting internal temperature and strain. The microelectronic components include a power source, a pulsed laser driver, time domain data acquisition hardware, a microprocessor, a data storage device, and a communication interface. The sensing system would be incorporated within the composite during its manufacture. The microelectronic data acquisition and logging system would record the environmental conditions to which the vessel has been subjected to during its storage and transit, e.g., the history of thermal excursions, pressure loading data, the occurrence of mechanical impacts, the presence of changing internal strain due to aging, delamination, material decomposition, etc. Data would be maintained din non-volatile memory for subsequent readout through a microcomputer interface.

In-situ cure monitoring of isocyanate adhesives using microdielectric analysis

Treesearch

Micahel P. Wolcott; Timothy G. Rials

1995-01-01

Recent advances in microelectronics have produced small electrodes that can be used for remote dielectric measurements. These miniature sensors are small enough to be embedded in a composite panel during manufacture with little disturbance to the manufacturing process. Small particleboard panels (5 by 4.5 by 0.25 in.) were manufactured with 6 percent polymeric...

In-situ cure monitoring of isocyanate adhesives using microdielectric analysis

Treesearch

Michael P. Wolcott; Timothy G. Rials

1995-01-01

Recent advances in microelectronics have produced small electrodes that can be used for remote dielectric measurements. These miniature sensors are small enought to be embedded in a composite panel during manufacture with little disturbance to the manufacturing process. Small particleboard panels (5 by 4.5 by 0.25 in) were manufactured with 6 percent polymeric...

A new generation in computing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kahn, R.E.

1983-11-01

Fifth generation of computers is described. The three disciplines involved in bringing such a new generation to reality are: microelectronics; artificial intelligence and, computer systems and architecture. Applications in industry, offices, aerospace, education, health care and retailing are outlined. An analysis is given of research efforts in the US, Japan, U.K., and Europe. Fifth generation programming languages are detailed.

Independent Research and Independent Exploratory Development Annual Report Fiscal Year 1975

DTIC Science & Technology

1975-09-01

and Coding Study.(Z?80) ................................... ......... .................... 40 Optical Cover CMMUnicallor’s Using Laser Transceiverst...Using Auger Spectroscopy and PUBLICATIONS Additional Advanced Analytical Techniques," Wagner, N. K., "Auger Electron Spectroscopy NELC Technical Note 2904...K.. "Analysis of Microelectronic Materials Using Auger Spectroscopy and Additional Advanced Analytical Techniques," Contact: Proceedings of the

Laser Scanner Tests For Single-Event Upsets

NASA Technical Reports Server (NTRS)

Kim, Quiesup; Soli, George A.; Schwartz, Harvey R.

1992-01-01

Microelectronic advanced laser scanner (MEALS) is opto/electro/mechanical apparatus for nondestructive testing of integrated memory circuits, logic circuits, and other microelectronic devices. Multipurpose diagnostic system used to determine ultrafast time response, leakage, latchup, and electrical overstress. Used to simulate some of effects of heavy ions accelerated to high energies to determine susceptibility of digital device to single-event upsets.

Assessing Advanced High School and Undergraduate Students' Thinking Skills: The Chemistry--From the Nanoscale to Microelectronics Module

ERIC Educational Resources Information Center

Dori, Yehudit Judy; Dangur, Vered; Avargil, Shirly; Peskin, Uri

2014-01-01

Chemistry students in Israel have two options for studying chemistry: basic or honors (advanced placement). For instruction in high school honors chemistry courses, we developed a module focusing on abstract topics in quantum mechanics: Chemistry--From the Nanoscale to Microelectronics. The module adopts a visual-conceptual approach, which…

Microelectronics in F. E.: Some Personal Perceptions. An Occasional Paper.

ERIC Educational Resources Information Center

Dean, K. J.

The recent microelectronics developments are having, and will continue to have, a sharp impact on various industries in Great Britain, and thus on the capacity of the Further Education System to produce qualified graduates. To maintain a high quality of education, instructors must learn of these new developments and teach them to their vocational…

Reliability Considerations for Ultra- Low Power Space Applications

NASA Technical Reports Server (NTRS)

White, Mark; Johnston, Allan

2012-01-01

NASA, the aerospace community, and other high reliability (hi-rel) users of advanced microelectronic products face many challenges as technology continues to scale into the deep sub- micron region and ULP devices are sought after. Technology trends, ULP microelectronics, scaling and performance tradeoffs, reliability considerations, and spacecraft environments will be presented from a ULP perspective for space applications.

Sealed symmetric multilayered microelectronic device package with integral windows

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2002-01-01

A sealed symmetric multilayered package with integral windows for housing one or more microelectronic devices. The devices can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The multilayered package can be formed of a low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the windows being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. The microelectronic devices can be flip-chip bonded and oriented so that the light-sensitive sides are optically accessible through the windows. The result is a compact, low-profile, sealed symmetric package, having integral windows that can be hermetically-sealed.

Uses of ceramics in microelectronics: A survey

NASA Technical Reports Server (NTRS)

Bratschun, W. R.; Mountvala, A. J.; Pincus, A. G.

1971-01-01

The properties and behavior of ceramic materials used in components for electronic circuitry are examined to appraise the present and future directions for microelectronics, and to suggest further product development, and how innovations may be useful in other technologies. Ceramic and glass insulators, resistors, capacitors, and the use of ceramics and glasses in microcircuitry are discussed along with technology transfer to nonaerospace uses.

Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages

DOE PAGES

Carlton, Holly D.; Elmer, John W.; Li, Yan; ...

2016-04-13

For this study synchrotron radiation micro-­tomography, a non-destructive three-dimensional imaging technique, is employed to investigate an entire microelectronic package with a cross-sectional area of 16 x 16 mm. Due to the synchrotron’s high flux and brightness the sample was imaged in just 3 minutes with an 8.7 μm spatial resolution.

Investigation of “benign” ionic content in epoxy that induces microelectronic device failure

Treesearch

Gregory T. Schueneman; Jeffery Kingsbury; Edmund Klinkerch

2011-01-01

Microelectronics and the devices dependent upon them have the extremely challenging requirements of becoming more capable and less expensive every year. This drives the industry to pack more functions into an ever smaller footprint until the next technological revolution. Adding to this situation is the removal of lead from the bill of materials followed closely by...

Microelectronics used for Semiconductor Imaging Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heijne, Erik H. M.

Semiconductor crystal technology, microelectronics developments and nuclear particle detection have been in a relation of symbiosis, all the way from the beginning. The increase of complexity in electronics chips can now be applied to obtain much more information on the incident nuclear radiation. Some basic technologies are described, in order to acquire insight in possibilities and limitations for the most recent detectors.

Alpha particle-induced soft errors in microelectronic devices. I

NASA Astrophysics Data System (ADS)

Redman, D. J.; Sega, R. M.; Joseph, R.

1980-03-01

The article provides a tutorial review and trend assessment of the problem of alpha particle-induced soft errors in VLSI memories. Attention is given to an analysis of the design evolution of modern ICs, and the characteristics of alpha particles and their origin in IC packaging are reviewed. Finally, the process of an alpha particle penetrating an IC is examined.

Methodology of problem-based learning engineering and technology and of its implementation with modern computer resources

NASA Astrophysics Data System (ADS)

Lebedev, A. A.; Ivanova, E. G.; Komleva, V. A.; Klokov, N. M.; Komlev, A. A.

2017-01-01

The considered method of learning the basics of microelectronic circuits and systems amplifier enables one to understand electrical processes deeper, to understand the relationship between static and dynamic characteristics and, finally, bring the learning process to the cognitive process. The scheme of problem-based learning can be represented by the following sequence of procedures: the contradiction is perceived and revealed; the cognitive motivation is provided by creating a problematic situation (the mental state of the student), moving the desire to solve the problem, to raise the question "why?", the hypothesis is made; searches for solutions are implemented; the answer is looked for. Due to the complexity of architectural schemes in the work the modern methods of computer analysis and synthesis are considered in the work. Examples of engineering by students in the framework of students' scientific and research work of analog circuits with improved performance based on standard software and software developed at the Department of Microelectronics MEPhI.

Solar Variability and the Near-Earth Environment: Mining Enhanced Low Dose Rate Sensitivity Data From the Microelectronics and Photonics Test Bed Space Experiment

NASA Technical Reports Server (NTRS)

Turflinger, T.; Schmeichel, W.; Krieg, J.; Titus, J.; Campbell, A.; Reeves, M.; Marshall (P.); Hardage, Donna (Technical Monitor)

2004-01-01

This effort is a detailed analysis of existing microelectronics and photonics test bed satellite data from one experiment, the bipolar test board, looking to improve our understanding of the enhanced low dose rate sensitivity (ELDRS) phenomenon. Over the past several years, extensive total dose irradiations of bipolar devices have demonstrated that many of these devices exhibited ELDRS. In sensitive bipolar transistors, ELDRS produced enhanced degradation of base current, resulting in enhanced gain degradation at dose rates <0.1 rd(Si)/s compared to similar transistors irradiated at dose rates >1 rd(Si)/s. This Technical Publication provides updated information about the test devices, the in-flight experiment, and both flight-and ground-based observations. Flight data are presented for the past 5 yr of the mission. These data are compared to ground-based data taken on devices from the same date code lots. Information about temperature fluctuations, power shutdowns, and other variables encountered during the space flight are documented.

Microelectronics Reliability

DTIC Science & Technology

2017-01-17

2016-0155 Kirtland AFB, NM 87117-5776 9. SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR’S ACRONYM(S) AFRL /RVSW 11...22060-6218 1 cy AFRL /RVIL Kirtland AFB, NM 87117-5776 2 cys Official Record Copy AFRL /RVSW/Clay Mayberry 1 cy Approved for... AFRL -RV-PS- AFRL -RV-PS- TR-2016-0155 TR-2016-0155 MICROELECTRONICS RELIABILITY Clay Mayberry and Joseph Bernstein 17 Jan 2017 Interim Report

Microelectronic bioinstrumentation system

NASA Technical Reports Server (NTRS)

Ko, W. H.; Yon, E. T.; Rodriguez, R. J.

1974-01-01

The progess made from April 1973 to June 1974 on a microelectronics bioinstrumentation system is reported and includes data for the following three individual projects: (1) a radio frequency powered implant telemetry system; (2) an ingestible temperature telemeter; and (3) development of pO2 and pH sensors. Proposed activities for continuation of the research for the period September 1, 1974 to August 31, 1975 are also discussed.

Radiofrequency and microwave radiation in the microelectronics industry.

PubMed

Cohen, R

1986-01-01

The microscopic precision required to produce minute integrated circuits is dependent on several processes utilizing radiofrequency and microwave radiation. This article provides a review of radiofrequency and microwave exposures in microelectronics and of the physical and biologic properties of these types of radiation; summarizes the existing, relevant medical literature; and provides the clinician with guidelines for diagnosis and treatment of excessive exposures to microwave and radiofrequency radiation.

Photopolymerizable liquid encapsulants for microelectronic devices

NASA Astrophysics Data System (ADS)

Baikerikar, Kiran K.

2000-10-01

Plastic encapsulated microelectronic devices consist of a silicon chip that is physically attached to a leadframe, electrically interconnected to input-output leads, and molded in a plastic that is in direct contact with the chip, leadframe, and interconnects. The plastic is often referred to as the molding compound, and is used to protect the chip from adverse mechanical, thermal, chemical, and electrical environments. Encapsulation of microelectronic devices is typically accomplished using a transfer molding process in which the molding compound is cured by heat. Most transfer molding processes suffer from significant problems arising from the high operating temperatures and pressures required to fill the mold. These aspects of the current process can lead to thermal stresses, incomplete mold filling, and wire sweep. In this research, a new strategy for encapsulating microelectronic devices using photopolymerizable liquid encapsulants (PLEs) has been investigated. The PLEs consist of an epoxy novolac-based vinyl ester resin (˜25 wt.%), fused silica filler (70--74 wt.%), and a photoinitiator, thermal initiator, and silane coupling agent. For these encapsulants, the use of light, rather than heat, to initiate the polymerization allows precise control over when the reaction starts, and therefore completely decouples the mold filling and the cure. The low viscosity of the PLEs allows for low operating pressures and minimizes problems associated with wire sweep. In addition, the in-mold cure time for the PLEs is equivalent to the in-mold cure times of current transfer molding compounds. In this thesis, the thermal and mechanical properties, as well as the viscosity and adhesion of photopolymerizable liquid encapsulants, are reported in order to demonstrate that a UV-curable formulation can have the material properties necessary for microelectronic encapsulation. In addition, the effects of the illumination time, postcure time, fused silica loading, and the inclusion of a thermal initiator on the thermal and mechanical properties of the final cured encapsulants have been investigated. The results show that the material properties of the PLEs are the same, if not better, than those exhibited by conventional transfer molding compounds and demonstrate the potential of using PLEs for encapsulating microelectronic devices.

Practical Applications of Cosmic Ray Science: Spacecraft, Aircraft, Ground-Based Computation and Control Systems, and Human Health and Safety

NASA Technical Reports Server (NTRS)

Atwell, William; Koontz, Steve; Normand, Eugene

2012-01-01

Three twentieth century technological developments, 1) high altitude commercial and military aircraft; 2) manned and unmanned spacecraft; and 3) increasingly complex and sensitive solid state micro-electronics systems, have driven an ongoing evolution of basic cosmic ray science into a set of practical engineering tools needed to design, test, and verify the safety and reliability of modern complex technological systems. The effects of primary cosmic ray particles and secondary particle showers produced by nuclear reactions with the atmosphere, can determine the design and verification processes (as well as the total dollar cost) for manned and unmanned spacecraft avionics systems. Similar considerations apply to commercial and military aircraft operating at high latitudes and altitudes near the atmospheric Pfotzer maximum. Even ground based computational and controls systems can be negatively affected by secondary particle showers at the Earth s surface, especially if the net target area of the sensitive electronic system components is large. Finally, accumulation of both primary cosmic ray and secondary cosmic ray induced particle shower radiation dose is an important health and safety consideration for commercial or military air crews operating at high altitude/latitude and is also one of the most important factors presently limiting manned space flight operations beyond low-Earth orbit (LEO). In this paper we review the discovery of cosmic ray effects on the performance and reliability of microelectronic systems as well as human health and the development of the engineering and health science tools used to evaluate and mitigate cosmic ray effects in ground-based atmospheric flight, and space flight environments. Ground test methods applied to microelectronic components and systems are used in combinations with radiation transport and reaction codes to predict the performance of microelectronic systems in their operating environments. Similar radiation transport codes are used to evaluate possible human health effects of cosmic ray exposure, however, the health effects are based on worst-case analysis and extrapolation of a very limited human exposure data base combined with some limited experimental animal data. Finally, the limitations on human space operations beyond low-Earth orbit imposed by long term exposure to galactic cosmic rays are discussed.

Using federal technology policy to strength the US microelectronics industry

NASA Astrophysics Data System (ADS)

Gover, J. E.; Gwyn, C. W.

1994-07-01

A review of US and Japanese experiences with using microelectronics consortia as a tool for strengthening their respective industries reveals major differences. Japan has established catch-up consortia with focused goals. These consortia have a finite life targeted from the beginning, and emphasis is on work that supports or leads to product and process-improvement-driven commercialization. Japan's government has played a key role in facilitating the development of consortia and has used consortia promote domestic competition. US consortia, on the other hand, have often emphasized long-range research with considerably less focus than those in Japan. The US consortia have searched for and often made revolutionary technology advancements. However, technology transfer to their members has been difficult. Only SEMATECH has assisted its members with continuous improvements, compressing product cycles, establishing relationships, and strengthening core competencies. The US government has not been a catalyst nor provided leadership in consortia creation and operation. We propose that in order to regain world leadership in areas where US companies lag foreign competition, the US should create industry-wide, horizontal-vertical, catch-up consortia or continue existing consortia in the six areas where the US lags behind Japan -- optoelectronics, displays, memories, materials, packaging, and manufacturing equipment. In addition, we recommend that consortia be established for special government microelectronics and microelectronics research integration and application. We advocate that these consortia be managed by an industry-led Microelectronics Alliance, whose establishment would be coordinated by the Department of Commerce. We further recommend that the Semiconductor Research Corporation, the National Science Foundation Engineering Research Centers, and relevant elements of other federal programs be integrated into this consortia complex.

Using federal technology policy to strength the US microelectronics industry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gover, J.E.; Gwyn, C.W.

1994-07-01

A review of US and Japanese experiences with using microelectronics consortia as a tool for strengthening their respective industries reveals major differences. Japan has established catch-up consortia with focused goals. These consortia have a finite life targeted from the beginning, and emphasis is on work that supports or leads to product and process-improvement-driven commercialization. Japan`s government has played a key role in facilitating the development of consortia and has used consortia promote domestic competition. US consortia, on the other hand, have often emphasized long-range research with considerably less focus than those in Japan. The US consortia have searched for andmore » often made revolutionary technology advancements. However, technology transfer to their members has been difficult. Only SEMATECH has assisted its members with continuous improvements, compressing product cycles, establishing relationships, and strengthening core competencies. The US government has not been a catalyst nor provided leadership in consortia creation and operation. We propose that in order to regain world leadership in areas where US companies lag foreign competition, the US should create industry-wide, horizontal-vertical, catch-up consortia or continue existing consortia in the six areas where the US lags behind Japan -- optoelectronics, displays, memories, materials, packaging, and manufacturing equipment. In addition, we recommend that consortia be established for special government microelectronics and microelectronics research integration and application. We advocate that these consortia be managed by an industry-led Microelectronics Alliance, whose establishment would be coordinated by the Department of Commerce. We further recommend that the Semiconductor Research Corporation, the National Science Foundation Engineering Research Centers, and relevant elements of other federal programs be integrated into this consortia complex.« less

Microsensor research

NASA Astrophysics Data System (ADS)

Hughes, R. C.; Drebing, C. G.

1990-04-01

The technology that led to very large scale integrated circuits on silicon chips also provides a basis for new microsensors that are small, inexpensive, low power, rugged, and reliable. Two examples of microsensors Sandia is developing that take advantage of this technology are the microelectronic chemical sensor array and the radiation sensing field effect transistor (RADFET). Increasingly, the technology of chemical sensing needs new microsensor concepts. Applications in this area include environmental monitoring, criminal investigations, and state-of-health monitoring, both for equipment and living things. Chemical microsensors can satisfy sensing needs in the industrial, consumer, aerospace, and defense sectors. The microelectronic chemical-sensor array may address some of these applications. We have fabricated six separate chemical gas sensing areas on the microelectronic chemical sensor array. By using different catalytic metals on the gate areas of the diodes, we can selectively sense several gases.

Method of fabricating a microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2003-01-01

A method of fabricating a microelectronic device package with an integral window for providing optical access through an aperture in the package. The package is made of a multilayered insulating material, e.g., a low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC). The window is inserted in-between personalized layers of ceramic green tape during stackup and registration. Then, during baking and firing, the integral window is simultaneously bonded to the sintered ceramic layers of the densified package. Next, the microelectronic device is flip-chip bonded to cofired thick-film metallized traces on the package, where the light-sensitive side is optically accessible through the window. Finally, a cover lid is attached to the opposite side of the package. The result is a compact, low-profile package, flip-chip bonded, hermetically-sealed package having an integral window.

Applicability of LET to single events in microelectronic structures

NASA Astrophysics Data System (ADS)

Xapsos, Michael A.

1992-12-01

LET is often used as a single parameter to determine the energy deposited in a microelectronic structure by a single event. The accuracy of this assumption is examined for ranges of ion energies and volumes of silicon appropriate for modern microelectronics. It is shown to be accurate only under very restricted conditions. Significant differences arise because (1) LET is related to energy lost by the ion, not energy deposited in the volume; and (2) LET is an average value and does not account for statistical variations in energy deposition. Criteria are suggested for determining when factors other than LET should be considered, and new analytical approaches are presented to account for them. One implication of these results is that improvements can be made in space upset rate predictions by incorporating the new methods into currently used codes such as CREME and CRUP.

Strategic Computing. New-Generation Computing Technology: A Strategic Plan for Its Development and Application to Critical Problems in Defense

DTIC Science & Technology

1983-10-28

Computing. By seizing an opportunity to leverage recent advances in artificial intelligence, computer science, and microelectronics, the Agency plans...occurred in many separated areas of artificial intelligence, computer science, and microelectronics. Advances in "expert system" technology now...and expert knowledge o Advances in Artificial Intelligence: Mechanization of speech recognition, vision, and natural language understanding. o

Microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2002-01-01

An apparatus for packaging of microelectronic devices, including an integral window. The microelectronic device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can include a cofired ceramic frame or body. The package can have an internal stepped structure made of one or more plates, with apertures, which are patterned with metallized conductive circuit traces. The microelectronic device can be flip-chip bonded on the plate to these traces, and oriented so that the light-sensitive side is optically accessible through the window. A cover lid can be attached to the opposite side of the package. The result is a compact, low-profile package, having an integral window that can be hermetically-sealed. The package body can be formed by low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the window being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. Multiple chips can be located within a single package. The cover lid can include a window. The apparatus is particularly suited for packaging of MEMS devices, since the number of handling steps is greatly reduced, thereby reducing the potential for contamination.

Using FLUKA to Calculate Spacecraft: Single Event Environments: A Practical Approach

NASA Technical Reports Server (NTRS)

Koontz, Steve; Boeder, Paul; Reddell, Brandon

2009-01-01

The FLUKA nuclear transport and reaction code can be developed into a practical tool for calculation of spacecraft and planetary surface asset SEE and TID environments. Nuclear reactions and secondary particle shower effects can be estimated with acceptable accuracy both in-flight and in test. More detailed electronic device and/or spacecraft geometries than are reported here are possible using standard FLUKA geometry utilities. Spacecraft structure and shielding mass. Effects of high Z elements in microelectronic structure as reported previously. Median shielding mass in a generic slab or concentric sphere target geometry are at least approximately applicable to more complex spacecraft shapes. Need the spacecraft shielding mass distribution function applicable to the microelectronic system of interest. SEE environment effects can be calculated for a wide range of spacecraft and microelectronic materials with complete nuclear physics. Evaluate benefits of low Z shielding mass can be evaluated relative to aluminum. Evaluate effects of high Z elements as constituents of microelectronic devices. The principal limitation on the accuracy of the FLUKA based method reported here are found in the limited accuracy and incomplete character of affordable heavy ion test data. To support accurate rate estimates with any calculation method, the aspect ratio of the sensitive volume(s) and the dependence must be better characterized.

PREFACE: The Second Conference on Microelectronics, Microsystems and Nanotechnology

NASA Astrophysics Data System (ADS)

Nassiopoulou, Androula G.; Papanikolaou, Nikos; Tsamis, Christos

2005-01-01

The Second Conference on Microelectronics, Microsystems and Nanotechnology took place at the National Centre for Scientific Research `Demokritos', in Athens, Greece, between 14 and 17 November 2004. The conference was organized by the Institute of Microelectronics (IMEL) with the aim to bring together scientists and engineers working in the above exciting fields in an interactive forum. The conference included 45 oral presentations with 9 invited papers and was attended by 146 participants from 16 countries. The topics covered were nanotechnologies, quantum devices, sensors, micro- and nano-systems, semiconductor devices, C-MOS fabrication and characterization techniques, new materials, and IC design. Quantum devices and nanostructured materials attracted considerable attention. Both theoretical and experimental studies of metallic and semiconducting quantum systems were presented, with emphasis on their applications in electronics, optoelectronics, and nanocrystal memory devices. Another exciting topic was the recent developments in biocompatible lithographic processes for applications in biosensors. In particular novel processes for bio-friendly lithography, together with innovations in Si sensors for applications in medicine and food industry were presented. Recent developments and perspectives in CMOS technology towards the ultimate limit were also discussed. The conference covered issues and concepts of IC design with two invited talks on RF design and cryptography.The conference included presentations from several companies active in the field of microelectronics and systems in Greece.

Proceedings on Combating the Unrestricted Warfare Threat: Integrating Strategy, Analysis, and Technology, 20-21 March 2007

DTIC Science & Technology

2007-03-01

Prosthetics to enable return to units without loss of capability Quantum...and will give us a big advantage in terms of unrestricted warfare. Figure 17 high-Productivity Computing System PRoSThETICS We have an exciting...program in prosthetics (Figure 18). It started with a monkey at Duke University. We put microelectronic implants into her brain, taught her

A New Method for the Fast Analysis of Trihalomethanes in Tap and Recycled Waters Using Headspace Gas Chromatography with Micro-Electron Capture Detection.

PubMed

Alexandrou, Lydon D; Meehan, Barry J; Morrison, Paul D; Jones, Oliver A H

2017-05-15

Chemical disinfection of water supplies brings significant public health benefits by reducing microbial contamination. The process can however, result in the formation of toxic compounds through interactions between disinfectants and organic material in the source water. These new compounds are termed disinfection by-products (DBPs). The most common are the trihalomethanes (THMs) such as trichloromethane (chloroform), dichlorobromomethane, chlorodibromomethane and tribromomethane (bromoform); these are commonly reported as a single value for total trihalomethanes (TTHMs). Analysis of DBPs is commonly performed via time- and solvent-intensive sample preparation techniques such as liquid-liquid and solid phase extraction. In this study, a method using headspace gas chromatography with micro-electron capture detection was developed and applied for the analysis of THMs in drinking and recycled waters from across Melbourne (Victoria, Australia). The method allowed almost complete removal of the sample preparation step whilst maintaining trace level detection limits (>1 ppb). All drinking water samples had TTHM concentrations below the Australian regulatory limit of 250 µg/L but some were above the U.S. EPA limit of 60 µg/L. The highest TTHM concentration was 67.2 µg/L and lowest 22.9 µg/L. For recycled water, samples taken directly from treatment plants held significantly higher concentrations (153.2 µg/L TTHM) compared to samples from final use locations (4.9-9.3 µg/L).

Reduction of particle deposition on substrates using temperature gradient control

DOEpatents

Rader, Daniel J.; Dykhuizen, Ronald C.; Geller, Anthony S.

2000-01-01

A method of reducing particle deposition during the fabrication of microelectronic circuitry is presented. Reduction of particle deposition is accomplished by controlling the relative temperatures of various parts of the deposition system so that a large temperature gradient near the surface on which fabrication is taking place exists. This temperature gradient acts to repel particles from that surface, thereby producing cleaner surfaces, and thus obtaining higher yields from a given microelectronic fabrication process.

Book of Knowledge (BOK) for NASA Electronic Packaging Roadmap

NASA Technical Reports Server (NTRS)

Ghaffarian, Reza

2015-01-01

The objective of this document is to update the NASA roadmap on packaging technologies (initially released in 2007) and to present the current trends toward further reducing size and increasing functionality. Due to the breadth of work being performed in the area of microelectronics packaging, this report presents only a number of key packaging technologies detailed in three industry roadmaps for conventional microelectronics and a more recently introduced roadmap for organic and printed electronics applications. The topics for each category were down-selected by reviewing the 2012 reports of the International Technology Roadmap for Semiconductor (ITRS), the 2013 roadmap reports of the International Electronics Manufacturing Initiative (iNEMI), the 2013 roadmap of association connecting electronics industry (IPC), the Organic Printed Electronics Association (OE-A). The report also summarizes the results of numerous articles and websites specifically discussing the trends in microelectronics packaging technologies.

Laser processing of ceramics for microelectronics manufacturing

NASA Astrophysics Data System (ADS)

Sposili, Robert S.; Bovatsek, James; Patel, Rajesh

2017-03-01

Ceramic materials are used extensively in the microelectronics, semiconductor, and LED lighting industries because of their electrically insulating and thermally conductive properties, as well as for their high-temperature-service capabilities. However, their brittleness presents significant challenges for conventional machining processes. In this paper we report on a series of experiments that demonstrate and characterize the efficacy of pulsed nanosecond UV and green lasers in machining ceramics commonly used in microelectronics manufacturing, such as aluminum oxide (alumina) and aluminum nitride. With a series of laser pocket milling experiments, fundamental volume ablation rate and ablation efficiency data were generated. In addition, techniques for various industrial machining processes, such as shallow scribing and deep scribing, were developed and demonstrated. We demonstrate that lasers with higher average powers offer higher processing rates with the one exception of deep scribes in aluminum nitride, where a lower average power but higher pulse energy source outperformed a higher average power laser.

Bi-level multilayered microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2002-01-01

A bi-level, multilayered package with an integral window for housing a microelectronic device. The device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The multilayered package can be formed of a low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the window being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded and oriented so that the light-sensitive side is optically accessible through the window. A second chip can be bonded to the backside of the first chip, with the second chip being wirebonded to the second level of the bi-level package. The result is a compact, low-profile package, having an integral window that can be hermetically-sealed.

Microelectronics Failure Analysis Techniques. A Procedural Guide

DTIC Science & Technology

1980-01-01

Process Control ." Scanning Electron Microscopy/1976, lIT Research Institute, Chicago, Illinois, April 1976, pp. 515-519. 49. Cunningham, R.F. "Sample...Character- ization and Quality Control ." Scanning Electron Microscopy/1977 vol. I, lIT Research Institute, Chicago, Illinois, March 1977, pp. 201-210. 151...reference purposes. Neither the United States Government, the General Electric Company nor the lIT Research Institute warrant the accuracy of this

PREFACE: E-MRS 2012 Spring Meeting, Symposium M: More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics

NASA Astrophysics Data System (ADS)

Wenger, Christian; Fompeyrine, Jean; Vallée, Christophe; Locquet, Jean-Pierre

2012-12-01

More than Moore explores a new area of Silicon based microelectronics, which reaches beyond the boundaries of conventional semiconductor applications. Creating new functionality to semiconductor circuits, More than Moore focuses on motivating new technological possibilities. In the past decades, the main stream of microelectronics progresses was mainly powered by Moore's law, with two focused development arenas, namely, IC miniaturization down to nano scale, and SoC based system integration. While the microelectronics community continues to invent new solutions around the world to keep Moore's law alive, there is increasing momentum for the development of 'More than Moore' technologies which are based on silicon technologies but do not simply scale with Moore's law. Typical examples are RF, Power/HV, Passives, Sensor/Actuator/MEMS or Bio-chips. The More than Moore strategy is driven by the increasing social needs for high level heterogeneous system integration including non-digital functions, the necessity to speed up innovative product creation and to broaden the product portfolio of wafer fabs, and the limiting cost and time factors of advanced SoC development. It is believed that More than Moore will add value to society on top of and beyond advanced CMOS with fast increasing marketing potentials. Important key challenges for the realization of the 'More than Moore' strategy are: perspective materials for future THz devices materials systems for embedded sensors and actuators perspective materials for epitaxial approaches material systems for embedded innovative memory technologies development of new materials with customized characteristics The Hot topics covered by the symposium M (More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics) at E-MRS 2012 Spring Meeting, 14-18 May 2012 have been: development of functional ceramics thin films New dielectric materials for advanced microelectronics bio- and CMOS compatible material systems piezoelectric films and nanostructures Atomic Layer Deposition (ALD) of oxides and nitrides characterization and metrology of very thin oxide layers We would like to take this opportunity to thank the Scientific Committee and Local Committee for bringing together a coherent and high quality Symposium at E-MRS 2012 Spring Meeting. Christian Wenger, Jean Fompeyrine, Christophe Vallée and Jean-Pierre Locquet Organizing Committee of Symposium M September 2012

SETA Support for the DARPA Microelectronics Technology Insertion Program of the Microelectronics Technology Office

DTIC Science & Technology

1992-08-17

Conclusions. Key personnel planned and administered the 193-nm lithography SBIR workshop on May 7, 1992 as well as planned the GaAs Insertion...converters can use Josephson junctions (JJ) to improve performance. Superconductive quantum interference devices (SQUIDs), such as JJs, are used to form...forward control of a lithography stepper. Mark Conner at Booz-Allen has copies of the charts. You should take a few minutes to review them. I asked Costos

A Low Cost Rad-Tolerant Standard Cell Library

NASA Technical Reports Server (NTRS)

Gambles, Jody W.; Maki, Gary K.

1997-01-01

This paper describes circuit design techniques developed at the NASA Institute of Advanced Microelectronics that have been shown to protect CMOS circuits from the deleterious effects of the natural space radiation environment. The IAuE is leading a program to incorporate these radiation-tolerance providing design techniques into a commercial standard cell library that will be used in conjunction with available Electronic Design Automation tools to produce space flight qualified microelectronics fabricated at modern commercial CMOS foundries.

Development and ESCC evaluation of a monolithic silicon phototransistor array for optical encoders

NASA Astrophysics Data System (ADS)

Bregoli, M.; Ceriani, S.; Erspan, M.; Collini, A.; Ficorella, F.; Giacomini, G.; Bellutti, P.; How, L. S.; Hernandez, S.; Lundmark, K.

2017-11-01

Optoelettronica Italia Srl, better known as Optoi, is an Italian Company dealing with optoelectronics and microelectronics and focusing on back-end technologies. The growing volume of activities concerning the aerospace field has recently brought to the creation of a company unit, with collaborations with ESA, CNES and ASI. In this context, Optoi's key partner for the microelectronic front-end is Fondazione Bruno Kessler (FBK) and specifically its Micro Nano Facility (MNF).

Preliminary Flight Results of the Microelectronics and Photonics Test Bed: NASA DR1773 Fiber Optic Data Bus Experiment

NASA Technical Reports Server (NTRS)

Jackson, George L.; LaBel, Kenneth A.; Marshall, Cheryl; Barth, Janet; Seidleck, Christina; Marshall, Paul

1998-01-01

NASA Goddard Spare Flight Center's (GSFC) Dual Rate 1773 (DR1773) Experiment on the Microelectronic and Photonic Test Bed (MPTB) has provided valuable information on the performance of the AS 1773 fiber optic data bus in the space radiation environment. Correlation of preliminary experiment data to ground based radiation test results show the AS 1773 bus is employable in future spacecraft applications requiring radiation tolerant communication links.

1988 IEEE Aerospace Applications Conference, Park City, UT, Feb. 7-12, 1988, Digest

NASA Astrophysics Data System (ADS)

The conference presents papers on microwave applications, data and signal processing applications, related aerospace applications, and advanced microelectronic products for the aerospace industry. Topics include a high-performance antenna measurement system, microwave power beaming from earth to space, the digital enhancement of microwave component performance, and a GaAs vector processor based on parallel RISC microprocessors. Consideration is also given to unique techniques for reliable SBNR architectures, a linear analysis subsystem for CSSL-IV, and a structured singular value approach to missile autopilot analysis.

Silicon based nanogap device for studying electrical transport phenomena in molecule-nanoparticle hybrids.

PubMed

Strobel, Sebastian; Hernández, Rocío Murcia; Hansen, Allan G; Tornow, Marc

2008-09-17

We report the fabrication and characterization of vertical nanogap electrode devices using silicon-on-insulator substrates. Using only standard silicon microelectronic process technology, nanogaps down to 26 nm electrode separation were prepared. Transmission electron microscopy cross-sectional analysis revealed the well defined material architecture of the nanogap, comprising two electrodes of dissimilar geometrical shape. This asymmetry is directly reflected in transport measurements on molecule-nanoparticle hybrid systems formed by self-assembling a monolayer of mercaptohexanol on the electrode surface and the subsequent dielectrophoretic trapping of 30 nm diameter Au nanoparticles. The observed Coulomb staircase I-V characteristic measured at T = 4.2 K is in excellent agreement with theoretical modelling, whereby junction capacitances of the order of a few 10(-18) farad and asymmetric resistances of 30 and 300 MΩ, respectively, are also supported well by our independent estimates for the formed double barrier tunnelling system. We propose our nanoelectrode system for integrating novel functional electronic devices such as molecular junctions or nanoparticle hybrids into existing silicon microelectronic process technology.

Heuristic method of fabricating counter electrodes in dye-sensitized solar cells based on a PEDOT:PSS layer as a catalytic material

NASA Astrophysics Data System (ADS)

Edalati, Sh; Houshangi far, A.; Torabi, N.; Baneshi, Z.; Behjat, A.

2017-02-01

Poly(3,4-ethylendioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) was deposited on a fluoride-doped tin oxide glass substrate using a heuristic method to fabricate platinum-free counter electrodes for dye-sensitized solar cells (DSSCs). In this heuristic method a thin layer of PEDOT:PPS is obtained by spin coating the PEDOT:PSS on a Cu substrate and then removing the substrate with FeCl3. The characteristics of the deposited PEDOT:PSS were studied by energy dispersive x-ray analysis and scanning electron microscopy, which revealed the micro-electronic specifications of the cathode. The aforementioned DSSCs exhibited a solar conversion efficiency of 3.90%, which is far higher than that of DSSCs with pure PEDOT:PSS (1.89%). This enhancement is attributed not only to the micro-electronic specifications but also to the HNO3 treatment through our heuristic method. The results of cyclic voltammetry, electrochemical impedance spectroscopy (EIS) and Tafel polarization plots show the modified cathode has a dual function, including excellent conductivity and electrocatalytic activity for iodine reduction.

Cytotoxicity and mitogenicity assays with real-time and label-free monitoring of human granulosa cells with an impedance-based signal processing technology intergrating micro-electronics and cell biology.

PubMed

Oktem, Ozgur; Bildik, Gamze; Senbabaoglu, Filiz; Lack, Nathan A; Akin, Nazli; Yakar, Feridun; Urman, Defne; Guzel, Yilmaz; Balaban, Basak; Iwase, Akira; Urman, Bulent

2016-04-01

A recently developed technology (xCelligence) integrating micro-electronics and cell biology allows real-time, uninterrupted and quantitative analysis of cell proliferation, viability and cytotoxicity by measuring the electrical impedance of the cell population in the wells without using any labeling agent. In this study we investigated if this system is a suitable model to analyze the effects of mitogenic (FSH) and cytotoxic (chemotherapy) agents with different toxicity profiles on human granulosa cells in comparison to conventional methods of assessing cell viability, DNA damage, apoptosis and steroidogenesis. The system generated the real-time growth curves of the cells, and determined their doubling times, mean cell indices and generated dose-response curves after exposure to cytotoxic and mitogenic stimuli. It accurately predicted the gonadotoxicity of the drugs and distinguished less toxic agents (5-FU and paclitaxel) from more toxic ones (cisplatin and cyclophosphamide). This platform can be a useful tool for specific end-point assays in reproductive toxicology. Copyright © 2015 Elsevier Inc. All rights reserved.

Delidding and resealing hybrid microelectronic packages

NASA Astrophysics Data System (ADS)

Luce, W. F.

1982-05-01

The objective of this single phase MM and T contract was to develop the manufacturing technology necessary for the precision removal (delidding) and replacement (resealing) of covers on hermetically sealed hybrid microelectronic packages. The equipment and processes developed provide a rework technique which does not degrade the reliability of the package of the enclosed circuitry. A qualification test was conducted on 88 functional hybrid packages, with excellent results. A petition will be filed, accompanied by this report, requesting Mil-M-38510 be amended to allow this rework method.

Electronics for better healthcare.

PubMed

Wolf, Bernhard; Herzog, Karolin

2013-06-01

Microelectronics and microsystem technology have changed our daily lives considerably in the past 50 years. Countless everyday objects contain microelectronic components. In healthcare up to the present, however, it has not been possible to make major alterations in introducing electronics and information technology that would lead to innovative improvements and greater transparency. This paper describes initial steps in diagnostics and oncological therapy including telematic healthcare systems which can, for example, assist patients with cardiovascular diseases and shows, through these areas, how electronics and microsystems technology can contribute to better healthcare.

Effects of rapid thermal annealing on crystallinity and Sn surface segregation of {{Ge}}_{1-{\\boldsymbol{x}}}{{Sn}}_{{\\boldsymbol{x}}} films on Si (100) and Si (111)

NASA Astrophysics Data System (ADS)

Miao, Yuan-Hao; Hu, Hui-Yong; Song, Jian-Jun; Xuan, Rong-Xi; Zhang, He-Ming

2017-12-01

Not Available Project supported by the National Natural Science Foundation of China (Grant Nos. 61474085 and 61704130), the Science Research Plan in Shaanxi Province, China (Grant No. 2016GY-085), the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (Grant No. 90109162905), and the Fundamental Research Funds for the Central Universities, China (Grant No. 61704130).

Microelectronic superconducting crossover and coil

DOEpatents

Wellstood, F.C.; Kingston, J.J.; Clarke, J.

1994-03-01

A microelectronic component comprising a crossover is provided comprising a substrate, a first high T[sub c] superconductor thin film, a second insulating thin film comprising SrTiO[sub 3]; and a third high T[sub c] superconducting film which has strips which crossover one or more areas of the first superconductor film. An in situ method for depositing all three films on a substrate is provided which does not require annealing steps and which can be opened to the atmosphere between depositions. 13 figures.

Nano-interconnection for microelectronics and polymers with benzo-triazole

NASA Technical Reports Server (NTRS)

Park, Yeonjoon; Choi, Sang H.; Noh, Hyunpil; Kuk, Young

2006-01-01

Benzo-Triazole (BTA) is considered as an important bridging material that can connect an organic polymer to the metal electrode on silicon wafers as a part of the microelectronics fabrication technology. We report a detailed process of surface induced 3-D polymerization of BTA on the Cu electrode material which was measured with the Ultraviolet Photoemission Spectroscopy (UPS), X-ray Photoemission Spectroscopy (XPS), and Scanning Tunneling Microscope (STM). The electric utilization of shield and chain polymerization of BTA on Cu surface is contemplated in this study.

Photovoltaic energy converter as a chipscale high efficiency power source for implanted active microelectronic devices.

PubMed

Hwang, N-J; Patterson, W R; Song, Y-K; Atay, T; Nurmikko, A V

2004-01-01

We report the development of a microscale photovoltaic energy converter which has been designed and implemented to deliver power to CMOS-based microelectronic chips. The design targets the delivery of voltages on the order of 3V with power levels in excess of 10 mW. The geometry of the prototype device, which has been fabricated and tested, is specifically designed for coupling to an optical fiber, to facilitate remote power delivery in implantable component environment.

A New Method for the Fast Analysis of Trihalomethanes in Tap and Recycled Waters Using Headspace Gas Chromatography with Micro-Electron Capture Detection

PubMed Central

Alexandrou, Lydon D.; Meehan, Barry J.; Morrison, Paul D.; Jones, Oliver A. H.

2017-01-01

Chemical disinfection of water supplies brings significant public health benefits by reducing microbial contamination. The process can however, result in the formation of toxic compounds through interactions between disinfectants and organic material in the source water. These new compounds are termed disinfection by-products (DBPs). The most common are the trihalomethanes (THMs) such as trichloromethane (chloroform), dichlorobromomethane, chlorodibromomethane and tribromomethane (bromoform); these are commonly reported as a single value for total trihalomethanes (TTHMs). Analysis of DBPs is commonly performed via time- and solvent-intensive sample preparation techniques such as liquid–liquid and solid phase extraction. In this study, a method using headspace gas chromatography with micro-electron capture detection was developed and applied for the analysis of THMs in drinking and recycled waters from across Melbourne (Victoria, Australia). The method allowed almost complete removal of the sample preparation step whilst maintaining trace level detection limits (>1 ppb). All drinking water samples had TTHM concentrations below the Australian regulatory limit of 250 µg/L but some were above the U.S. EPA limit of 60 µg/L. The highest TTHM concentration was 67.2 µg/L and lowest 22.9 µg/L. For recycled water, samples taken directly from treatment plants held significantly higher concentrations (153.2 µg/L TTHM) compared to samples from final use locations (4.9–9.3 µg/L). PMID:28505068

Microsystem technology as a road from macro to nanoworld.

PubMed

Grabiec, Piotr; Domański, Krzysztof; Janus, Paweł; Zaborowski, Michał; Jaroszewicz, Bogdan

2005-04-01

Tremendous progress of microelectronic technology observed within last 40 years is closely related to even more remarkable progress of technological tools. It is important to note however, that these new tools may be used for fabrication of diverse multifunctional structures as well. Such devices, called MEMS (Micro-Electro-Mechanical-System) and MOEMS (Micro-Electro-Opto-Mechanical-System) integrate microelectronic and micromechanical structures in one system enabling interdisciplinary application, with most interesting and prospective being bio-medical investigations. Development of these applications requires however cooperation of multidisciplinary team of specialists, covering broad range of physics, (bio) chemistry and electronics, not mentioning medical doctors and other medical specialists. Thus, dissemination, of knowledge about existing processing capabilities is of key importance. In this paper, examples of various applications of microelectronic technology for fabrication of Microsystems which may be used for medicine and chemistry, will be presented. Besides, information concerning a design and technology potential available in poland and new, emerging opportunities will be given.

A stable solution-processed polymer semiconductor with record high-mobility for printed transistors

PubMed Central

Li, Jun; Zhao, Yan; Tan, Huei Shuan; Guo, Yunlong; Di, Chong-An; Yu, Gui; Liu, Yunqi; Lin, Ming; Lim, Suo Hon; Zhou, Yuhua; Su, Haibin; Ong, Beng S.

2012-01-01

Microelectronic circuits/arrays produced via high-speed printing instead of traditional photolithographic processes offer an appealing approach to creating the long-sought after, low-cost, large-area flexible electronics. Foremost among critical enablers to propel this paradigm shift in manufacturing is a stable, solution-processable, high-performance semiconductor for printing functionally capable thin-film transistors — fundamental building blocks of microelectronics. We report herein the processing and optimisation of solution-processable polymer semiconductors for thin-film transistors, demonstrating very high field-effect mobility, high on/off ratio, and excellent shelf-life and operating stabilities under ambient conditions. Exceptionally high-gain inverters and functional ring oscillator devices on flexible substrates have been demonstrated. This optimised polymer semiconductor represents a significant progress in semiconductor development, dispelling prevalent skepticism surrounding practical usability of organic semiconductors for high-performance microelectronic devices, opening up application opportunities hitherto functionally or economically inaccessible with silicon technologies, and providing an excellent structural framework for fundamental studies of charge transport in organic systems. PMID:23082244

Implications of Pb-free microelectronics assembly in aerospace applications

NASA Technical Reports Server (NTRS)

Shapiro, A. A.; Bonner, J. K.; Ogunseitan, D.; Saphores, J. D.; Schoenung, J.

2003-01-01

The commercial microelectronics industry is rapidly moving to completely Pb-free assembly strategies within the next decade. This trend is being driven by existing and proposed legislation in Europe and in Japan. The microelectronics industry has become truly global, as indicated by major U .S. firms who already adopted Pb-free implementation programs. Among these forward-looking firms are AT&T, IBM, Motorola, HP and Intel to name a few.Following Moore's law, advances in microelectronics are happening very rapidly. In many cases, commercial industry is ahead of the aerospace sector in technology. Progress by commercial industry, along with cost, drives the use of Commercial Off-The-Shelf (COTS) parts for military and space applications. We can thus anticipate that the aerospace industry will, at some point, be forced to use Pb-free components and subsystems as part of their standard business practices. In this paper we attempt to provide a snapshot of the commercial industry trends and how they may impact electronics in the aerospace environment. In addition, we also look at different strategies for implementation. Finally we present data collected on a recent NASA project to focus on finding suitable alternatives to eutectic tin-lead solders and solder pastes. The world is moving toward implementation of environmentally friendly manufacturing techniques. The aerospace industry will be forced to deal with issues related with Pb free assembly, either by availability or legislation. This paper provides some insight into some of the tradeoffs that should be considered.

In-situ microscale through-silicon via strain measurements by synchrotron x-ray microdiffraction exploring the physics behind data interpretation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Xi; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332; Thadesar, Paragkumar A.

2014-09-15

In-situ microscale thermomechanical strain measurements have been performed in combination with synchrotron x-ray microdiffraction to understand the fundamental cause of failures in microelectronics devices with through-silicon vias. The physics behind the raster scan and data analysis of the measured strain distribution maps is explored utilizing the energies of indexed reflections from the measured data and applying them for beam intensity analysis and effective penetration depth determination. Moreover, a statistical analysis is performed for the beam intensity and strain distributions along the beam penetration path to account for the factors affecting peak search and strain refinement procedure.

Some infra-red applications in combustion technology. Interim report 1 March-31 August 78

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swithenbank, J.; Turan, A.; Taylor, D.S.

1978-01-01

Infrared technology finds many applications in the field of combustion ranging from pollution monitoring, through military systems, to the control of industrial furnaces and boilers. This review of some selected concepts highlights the interaction between the diagnostic role of infrared measurements and the current status of mathematical modelling of combustion systems. The link between measurement and and computing has also evolved to the point where a digital processor is becoming an inherent part of many new instruments. This point is illustrated by reference to the diffraction particle size meter, fire detection and alarm systems, and furnace control. In the future,more » as fuels become scarce and expensive, and micro-electronics become more available and inexpensive, it is certain that infrared devices will find increasing application in smaller industries and the home. (Author)« less

Design, processing and testing of LSI arrays: Hybrid microelectronics task

NASA Technical Reports Server (NTRS)

Himmel, R. P.; Stuhlbarg, S. M.; Ravetti, R. G.; Zulueta, P. J.

1979-01-01

Mathematical cost factors were generated for both hybrid microcircuit and printed wiring board packaging methods. A mathematical cost model was created for analysis of microcircuit fabrication costs. The costing factors were refined and reduced to formulae for computerization. Efficient methods were investigated for low cost packaging of LSI devices as a function of density and reliability. Technical problem areas such as wafer bumping, inner/outer leading bonding, testing on tape, and tape processing, were investigated.

Static time-of-flight secondary ion mass spectrometry analysis of microelectronics related substrates using a polyatomic ion source

NASA Astrophysics Data System (ADS)

Ravanel, X.; Trouiller, C.; Juhel, M.; Wyon, C.; Kwakman, L. F. Tz.; Léonard, D.

2008-12-01

Recent time-of-flight secondary ion mass spectrometry studies using primary ion cluster sources such as Au n+, SF 5+, Bi n+ or C 60+ have shown the great advantages in terms of secondary ion yield enhancement and ion formation efficiency of polyatomic ion sources as compared to monoatomic ion sources like the commonly used Ga +. In this work, the effective gains provided by such a source in the static ToF-SIMS analysis of microelectronics devices were investigated. Firstly, the influence of the number of atoms in the primary cluster ion on secondary ion formation was studied for physically adsorbed di-isononyl phthalate (DNP) (plasticizer) and perfluoropolyether (PFPE). A drastic increase in secondary ion formation efficiency and a much lower detection limit were observed when using a polyatomic primary ion. Moreover, the yield of the higher mass species was much enhanced indicating a lower degree of fragmentation that can be explained by the fact that the primary ion energy is spread out more widely, or that there is a lower energy per incoming ion. Secondly, the influence of the number of Bi atoms in the Bi n primary ion on the information depth was studied using reference thermally grown silicon oxide samples. The information depth provided by a Bi n cluster was shown to be lowered when the number of atoms in the aggregate was increased.

Fighting blindness with microelectronics.

PubMed

Zrenner, Eberhart

2013-11-06

There is no approved cure for blindness caused by degeneration of the photoreceptor cells of the retina. However, there has been encouraging progress with attempts to restore vision using microelectronic retinal implant devices. Yet many questions remain to be addressed. Where is the best location to implant multielectrode arrays? How can spatial and temporal resolution be improved? What are the best ways to ensure the safety and longevity of these devices? Will color vision be possible? This Perspective discusses the current state of the art of retinal implants and attempts to address some of the outstanding questions.

Space, Atmospheric, and Terrestrial Radiation Environments

NASA Technical Reports Server (NTRS)

Barth, Janet L.; Dyer, C. S.; Stassinopoulos, E. G.

2003-01-01

The progress on developing models of the radiation environment since the 1960s is reviewed with emphasis on models that can be applied to predicting the performance of microelectronics used in spacecraft and instruments. Space, atmospheric, and ground environments are included. It is shown that models must be adapted continually to account for increased understanding of the dynamics of the radiation environment and the changes in microelectronics technology. The IEEE Nuclear and Space Radiation Effects Conference is a vital forum to report model progress to the radiation effects research community.

High-speed high-efficiency 500-W cw CO2 laser hermetization of metal frames of microelectronics devices

NASA Astrophysics Data System (ADS)

Levin, Andrey V.

1996-04-01

High-speed, efficient method of laser surface treatment has been developed using (500 W) cw CO2 laser. The principal advantages of CO2 laser surface treatment in comparison with solid state lasers are the basis of the method. It has been affirmed that high efficiency of welding was a consequence of the fundamental properties of metal-IR-radiation (10,6 mkm) interaction. CO2 laser hermetization of metal frames of microelectronic devices is described as an example of the proposed method application.

Using SDI-12 with ST microelectronics MCU's

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saari, Alexandra; Hinzey, Shawn Adrian; Frigo, Janette Rose

2015-09-03

ST Microelectronics microcontrollers and processors are readily available, capable and economical processors. Unfortunately they lack a broad user base like similar offerings from Texas Instrument, Atmel, or Microchip. All of these devices could be useful in economical devices for remote sensing applications used with environmental sensing. With the increased need for environmental studies, and limited budgets, flexibility in hardware is very important. To that end, and in an effort to increase open support of ST devices, I am sharing my teams' experience in interfacing a common environmental sensor communication protocol (SDI-12) with ST devices.

Crystallization Process of Superlattice-Like Sb/SiO2 Thin Films for Phase Change Memory Application

NASA Astrophysics Data System (ADS)

Zhu, Xiao-Qin; Zhang, Rui; Hu, Yi-Feng; Lai, Tian-Shu; Zhang, Jian-Hao; Zou, Hua; Song, Zhi-Tang

2018-05-01

Not Available Supported by the National Natural Science Foundation of China under Grant No 11774438, the Natural Science Foundation of Jiangsu Province under Grant No BK20151172, the Changzhou Science and Technology Bureau under Grant No CJ20160028, the Qing Lan Project, the Opening Project of State Key Laboratory of Silicon Materials under Grant No SKL2017-04, and the Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology of Institute of Microelectronics of Chinese Academy of Sciences.

Microelectronic superconducting device with multi-layer contact

DOEpatents

Wellstood, Frederick C.; Kingston, John J.; Clarke, John

1993-01-01

A microelectronic component comprising a crossover is provided comprising a substrate, a first high T.sub.c superconductor thin film, a second insulating thin film comprising SrTiO.sub.3 ; and a third high T.sub.c superconducting film which has strips which crossover one or more areas of the first superconductor film. An insitu method for depositing all three films on a substrate is provided which does not require annealing steps. The photolithographic process is used to separately pattern the high T.sub.c superconductor thin films.

A software upgrade method for micro-electronics medical implants.

PubMed

Cao, Yang; Hao, Hongwei; Xue, Lin; Li, Luming; Ma, Bozhi

2006-01-01

A software upgrade method for micro-electronics medical implants is designed to enhance the devices' function or renew the software if there are some bugs found, the software updating or some memory units disabled. The implants needn't be replaced by operations if the faults can be corrected through reprogramming, which reduces the patients' pain and improves the safety effectively. This paper introduces the software upgrade method using in-application programming (IAP) and emphasizes how to insure the system, especially the implanted part's reliability and stability while upgrading.

A Eu/Tb-mixed MOF for luminescent high-temperature sensing

NASA Astrophysics Data System (ADS)

Wang, Huizhen; Zhao, Dian; Cui, Yuangjing; Yang, Yu; Qian, Guodong

2017-02-01

Temperature measurements and thermal mapping using luminescent MOF operating in the high-temperature range are of great interest in the micro-electronic diagnosis. In this paper, we report a thermostable Eu/Tb-mixed MOF Eu0.37Tb0.63-BTC-a exhibiting strong luminescence at elevated temperature, which can serve as a ratiometric luminescent thermometer for high-temperature range. The high-temperature operating range (313-473 K), high relative sensitivity and accurate temperature resolution, make such a Eu/Tb-mixed MOF useful for micro-electronic diagnosis.

Microelectronic superconducting device with multi-layer contact

DOEpatents

Wellstood, F.C.; Kingston, J.J.; Clarke, J.

1993-10-26

A microelectronic component comprising a crossover is provided comprising a substrate, a first high T[sub c] superconductor thin film, a second insulating thin film comprising SrTiO[sub 3] ; and a third high T[sub c] superconducting film which has strips which crossover one or more areas of the first superconductor film. An in situ method for depositing all three films on a substrate is provided which does not require annealing steps. The photolithographic process is used to separately pattern the high T[sub c] superconductor thin films. 14 figures.

Hydrogen ion microlithography

DOEpatents

Tsuo, Y. Simon; Deb, Satyen K.

1990-01-01

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing.

Quantifying patient adherence during active orthodontic treatment with removable appliances using microelectronic wear-time documentation.

PubMed

Schäfer, Katharina; Ludwig, Björn; Meyer-Gutknecht, Hannes; Schott, Timm Cornelius

2015-02-01

The aim of this study was to quantify the wear times of removable appliances during active orthodontic treatment. The wear times of 141 orthodontic patients treated with active removable appliances in different locations were documented over a period of 3 months using an incorporated microsensor. Gender, age, treatment location, health insurance status, and type of device were evaluated with respect to wear time. Significant associations between wear times and patient factors were calculated using non-parametric tests. The median daily wear time was 9.7 hours/day for the entire cohort, far less than the 15 hours/day prescribed. Younger patients wore their appliances for longer than older patients (7-9 years 12.1 hours/day, 10-12 years 9.8 hours/day, and 13-15 years 8.5 hours/day; P < 0.0001). The median wear time for females (10.6 hours/day) was 1.4 hours/day longer than males (9.3 hours/day; P = 0.017). Patients treated at different locations wore their devices with a difference of up to 5.0 hours/day. Privately insured patients had significantly longer median wear times than statutorily insured patients. No significant difference in wear time was noted according to device type. The daily wear time of removable appliances during the active phase of orthodontic therapy can be routinely quantified using integrated microelectronic sensors. The relationship between orthodontist and patient seems to play a key role in patient adherence. Wear-time documentation provides the basis for more individualized wear-time recommendations for patients with removable appliances. This could result in a more efficient, shorter, and less painful orthodontic therapy. © The Author 2014. Published by Oxford University Press on behalf of the European Orthodontic Society. All rights reserved. For permissions, please email: journals.permissions@oup.com.

Job stress models, depressive disorders and work performance of engineers in microelectronics industry.

PubMed

Chen, Sung-Wei; Wang, Po-Chuan; Hsin, Ping-Lung; Oates, Anthony; Sun, I-Wen; Liu, Shen-Ing

2011-01-01

Microelectronic engineers are considered valuable human capital contributing significantly toward economic development, but they may encounter stressful work conditions in the context of a globalized industry. The study aims at identifying risk factors of depressive disorders primarily based on job stress models, the Demand-Control-Support and Effort-Reward Imbalance models, and at evaluating whether depressive disorders impair work performance in microelectronics engineers in Taiwan. The case-control study was conducted among 678 microelectronics engineers, 452 controls and 226 cases with depressive disorders which were defined by a score 17 or more on the Beck Depression Inventory and a psychiatrist's diagnosis. The self-administered questionnaires included the Job Content Questionnaire, Effort-Reward Imbalance Questionnaire, demography, psychosocial factors, health behaviors and work performance. Hierarchical logistic regression was applied to identify risk factors of depressive disorders. Multivariate linear regressions were used to determine factors affecting work performance. By hierarchical logistic regression, risk factors of depressive disorders are high demands, low work social support, high effort/reward ratio and low frequency of physical exercise. Combining the two job stress models may have better predictive power for depressive disorders than adopting either model alone. Three multivariate linear regressions provide similar results indicating that depressive disorders are associated with impaired work performance in terms of absence, role limitation and social functioning limitation. The results may provide insight into the applicability of job stress models in a globalized high-tech industry considerably focused in non-Western countries, and the design of workplace preventive strategies for depressive disorders in Asian electronics engineering population.

Synthesis of tin, silver and their alloy nanoparticles for lead-free interconnect applications

NASA Astrophysics Data System (ADS)

Jiang, Hongjin

SnPb solders have long been used as interconnect materials in microelectronic packaging. Due to the health threat of lead to human beings, the use of lead-free interconnect materials is imperative. Three kinds of lead-free interconnect materials are being investigated, namely lead-free metal solders (SnAg, SnAgCu, etc.), electrically conductive adhesives (ECAs) and carbon nanotubes (CNTs). However, there are still limitations for the full utilization of these lead-free interconnect materials in the microelectronic packaging, such as higher melting point of lead-free metal solders, lower electrical conductivity of the ECAs and poor adhesion of CNTs to substrates. This thesis is devoted to the research and development of low processing temperature lead-free interconnect materials for microelectronic packaging applications with an emphasis on fundamental studies of nanoparticles synthesis, dispersion and oxidation prevention, and nanocomposites fabrication. Oxide-free tin (Sn), tin/silver (96.5Sn3.5Ag) and tin/silver/copper (96.5Sn3.0Ag0.5Cu) alloy nanoparticles with different sizes were synthesized by a low temperature chemical reduction method. Both size dependent melting point and latent heat of fusion of the synthesized nanoparticles were obtained. The nano lead-free solder pastes/composites created by dispersing the SnAg or SnAgCu alloy nanoparticles into an acidic type flux spread and wet on the cleaned copper surface at 220 to 230°C. This study demonstrated the feasibility of nano sized SnAg or SnAgCu alloy particle pastes for low processing temperature lead-free interconnect applications in microelectronic packaging.

Microelectronic electroporation array

NASA Astrophysics Data System (ADS)

Johnson, Lee J.; Shaffer, Kara J.; Skeath, Perry; Perkins, Frank K.; Pancrazio, Joseph; Scribner, Dean

2004-06-01

Gene Array technology has allowed for the study of gene binding by creating thousands of potential binding sites on a single device. A limitation of the current technology is that the effects of the gene and the gene-derived proteins cannot be studied in situ the same way, thousand site cell arrays are not readily available. We propose a new device structure to study the effects of gene modification on cells. This new array technology uses electroporation to target specific areas within a cell culture for transfection of genes. Electroporation arrays will allow high throughput analysis of gene effects on a given cell's response to a stress or a genes ability to restore normal cell function in disease modeling cells. Fluorescent imaging of dye labeled indicator molecules or cell viability will provide results indicating the most effective genes. The electroporation array consists of a microelectronic circuit, ancillary electronics, protecting electrode surface for cell culturing and a perfusion system for gene or drug delivery. The advantages of the current device are that there are 3200 sites for electroporation, all or any subsets of the electrodes can be activated. The cells are held in place by the electrode material. This technology could also be applied to high throughput screening of cell impermeant drugs.

Thermal Cycling Life Prediction of Sn-3.0Ag-0.5Cu Solder Joint Using Type-I Censored Data

PubMed Central

Mi, Jinhua; Yang, Yuan-Jian; Huang, Hong-Zhong

2014-01-01

Because solder joint interconnections are the weaknesses of microelectronic packaging, their reliability has great influence on the reliability of the entire packaging structure. Based on an accelerated life test the reliability assessment and life prediction of lead-free solder joints using Weibull distribution are investigated. The type-I interval censored lifetime data were collected from a thermal cycling test, which was implemented on microelectronic packaging with lead-free ball grid array (BGA) and fine-pitch ball grid array (FBGA) interconnection structures. The number of cycles to failure of lead-free solder joints is predicted by using a modified Engelmaier fatigue life model and a type-I censored data processing method. Then, the Pan model is employed to calculate the acceleration factor of this test. A comparison of life predictions between the proposed method and the ones calculated directly by Matlab and Minitab is conducted to demonstrate the practicability and effectiveness of the proposed method. At last, failure analysis and microstructure evolution of lead-free solders are carried out to provide useful guidance for the regular maintenance, replacement of substructure, and subsequent processing of electronic products. PMID:25121138

GeNeDA: An Open-Source Workflow for Design Automation of Gene Regulatory Networks Inspired from Microelectronics.

PubMed

Madec, Morgan; Pecheux, François; Gendrault, Yves; Rosati, Elise; Lallement, Christophe; Haiech, Jacques

2016-10-01

The topic of this article is the development of an open-source automated design framework for synthetic biology, specifically for the design of artificial gene regulatory networks based on a digital approach. In opposition to other tools, GeNeDA is an open-source online software based on existing tools used in microelectronics that have proven their efficiency over the last 30 years. The complete framework is composed of a computation core directly adapted from an Electronic Design Automation tool, input and output interfaces, a library of elementary parts that can be achieved with gene regulatory networks, and an interface with an electrical circuit simulator. Each of these modules is an extension of microelectronics tools and concepts: ODIN II, ABC, the Verilog language, SPICE simulator, and SystemC-AMS. GeNeDA is first validated on a benchmark of several combinatorial circuits. The results highlight the importance of the part library. Then, this framework is used for the design of a sequential circuit including a biological state machine.

Microelectronics Revolution And The Impact Of Automation In The New Industrialized Countries

NASA Astrophysics Data System (ADS)

Baranauskas, Vitor

1984-08-01

A brief review of some important historical points on the origin of the Factories and the Industrial Revolution is presented with emphasis in the social problems related to the automation of the human labor. Until the World War I, the social changes provoked by the Industrial Revolution caused one division of the World in developed and underdeveloped countries. After that period, the less developed nations began their industrialization mainly through the Multinationals Corporations (MC). These enterprises were very important to the production and exportation of utilities and manufactures in general, mainly in those products which required intensive and direct human labor. At present time, with the pervasiveness of microelectronics in the automation, this age seems to reaching an end because all continous processes in industry tend economicaly toward total automation. This fact will cause a retraction in long-term investments and, beyond massive unemployment, there is a tendency for these MC industries to return to their original countries. The most promising alternative to avoid these events, and perhaps the unique, is to incentive an autonomous development in areas of high technology, as for instance, the microelectronics itself.

BOK-Printed Electronics

NASA Technical Reports Server (NTRS)

Ghaffarian, Reza

2013-01-01

The use of printed electronics technologies (PETs), 2D or 3D printing approaches either by conventional electronic fabrication or by rapid graphic printing of organic or nonorganic electronic devices on various small or large rigid or flexible substrates, is projected to grow exponentially in commercial industry. This has provided an opportunity to determine whether or not PETs could be applicable for low volume and high-reliability applications. This report presents a summary of literature surveyed and provides a body of knowledge (BOK) gathered on the current status of organic and printed electronics technologies. It reviews three key industry roadmaps- on this subject-OE-A, ITRS, and iNEMI-each with a different name identification for this emerging technology. This followed by a brief review of the status of the industry on standard development for this technology, including IEEE and IPC specifications. The report concludes with key technologies and applications and provides a technology hierarchy similar to those of conventional microelectronics for electronics packaging. Understanding key technology roadmaps, parameters, and applications is important when judicially selecting and narrowing the follow-up of new and emerging applicable technologies for evaluation, as well as the low risk insertion of organic, large area, and printed electronics.

Polysilicon for everything?

NASA Astrophysics Data System (ADS)

Ward, M. C. L.; McNie, Mark E.; Bunyan, Robert J.; King, David O.; Carline, Roger T.; Wilson, Rebecca; Gillham, J. P.

1998-09-01

We review some of the attractive attributes of microengineering and relate them to features of the highly successful silicon microelectronics industry. We highlight the need for cost effective functionality rather than ultimate performance as a driver for success and review key examples of polysilicon devices from this point of view. The effective exploitation of the data generated by the cost effective polysilicon sensors is also considered and we conclude that `non traditional' data analysis will need to be exploited if full use is to be made of polysilicon devices.

Space station automation study. Automation requirements derived from space manufacturing concepts. Volume 1: Executive summary

NASA Technical Reports Server (NTRS)

1984-01-01

The two manufacturing concepts developed represent innovative, technologically advanced manufacturing schemes. The concepts were selected to facilitate an in depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, and artificial intelligence. While the cost effectiveness of these facilities has not been analyzed as part of this study, both appear entirely feasible for the year 2000 timeframe. The growing demand for high quality gallium arsenide microelectronics may warrant the ventures.

Proceedings of the Goddard Space Flight Center Workshop on Robotics for Commercial Microelectronic Processes in Space

NASA Technical Reports Server (NTRS)

1987-01-01

Potential applications of robots for cost effective commercial microelectronic processes in space were studied and the associated robotic requirements were defined. Potential space application areas include advanced materials processing, bulk crystal growth, and epitaxial thin film growth and related processes. All possible automation of these processes was considered, along with energy and environmental requirements. Aspects of robot capabilities considered include system intelligence, ROM requirements, kinematic and dynamic specifications, sensor design and configuration, flexibility and maintainability. Support elements discussed included facilities, logistics, ground support, launch and recovery, and management systems.

Hydrogen ion microlithography

DOEpatents

Tsuo, Y.S.; Deb, S.K.

1990-10-02

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing. 6 figs.

Microelectronic components and metallic oxide studies and applications

NASA Technical Reports Server (NTRS)

Williams, L., Jr.

1976-01-01

The project involved work in two basic areas: (1) Evaluation of commercial screen printable thick film conductors, resistors, thermistors and dielectrics as well as alumina substrates used in hybird microelectronics industries. Results of tests made on materials produced by seven companies are presented. (2) Experimental studies on metallic oxides of copper and vanadium, in an effort to determine their electrochemical properties in crystalline, powder mixtures and as screen printable thick films constituted the second phase of the research effort. Oxide investigations were aimed at finding possible applications of these materials as switching devices memory elements and sensors.

Zero-dimensional to three-dimensional nanojoining: current status and potential applications

DOE PAGES

Ma, Ying; Li, Hong; Bridges, Denzel; ...

2016-08-01

We report that the continuing miniaturization of microelectronics is pushing advanced manufacturing into nanomanufacturing. Nanojoining is a bottom-up assembly technique that enables functional nanodevice fabrication with dissimilar nanoscopic building blocks and/or molecular components. Various conventional joining techniques have been modified and re-invented for joining nanomaterials. Our review surveys recent progress in nanojoining methods, as compared to conventional joining processes. Examples of nanojoining are given and classified by the dimensionality of the joining materials. At each classification, nanojoining is reviewed and discussed according to materials specialties, low dimensional processing features, energy input mechanisms and potential applications. The preparation of new intermetallicmore » materials by reactive nanoscale multilayer foils based on self-propagating high-temperature synthesis is highlighted. This review will provide insight into nanojoining fundamentals and innovative applications in power electronics packaging, plasmonic devices, nanosoldering for printable electronics, 3D printing and space manufacturing.« less

Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages.

PubMed

Carlton, Holly D; Elmer, John W; Li, Yan; Pacheco, Mario; Goyal, Deepak; Parkinson, Dilworth Y; MacDowell, Alastair A

2016-04-13

Synchrotron radiation micro-tomography (SRµT) is a non-destructive three-dimensional (3D) imaging technique that offers high flux for fast data acquisition times with high spatial resolution. In the electronics industry there is serious interest in performing failure analysis on 3D microelectronic packages, many which contain multiple levels of high-density interconnections. Often in tomography there is a trade-off between image resolution and the volume of a sample that can be imaged. This inverse relationship limits the usefulness of conventional computed tomography (CT) systems since a microelectronic package is often large in cross sectional area 100-3,600 mm(2), but has important features on the micron scale. The micro-tomography beamline at the Advanced Light Source (ALS), in Berkeley, CA USA, has a setup which is adaptable and can be tailored to a sample's properties, i.e., density, thickness, etc., with a maximum allowable cross-section of 36 x 36 mm. This setup also has the option of being either monochromatic in the energy range ~7-43 keV or operating with maximum flux in white light mode using a polychromatic beam. Presented here are details of the experimental steps taken to image an entire 16 x 16 mm system within a package, in order to obtain 3D images of the system with a spatial resolution of 8.7 µm all within a scan time of less than 3 min. Also shown are results from packages scanned in different orientations and a sectioned package for higher resolution imaging. In contrast a conventional CT system would take hours to record data with potentially poorer resolution. Indeed, the ratio of field-of-view to throughput time is much higher when using the synchrotron radiation tomography setup. The description below of the experimental setup can be implemented and adapted for use with many other multi-materials.

Analysis of space radiation data of semiconductor memories

NASA Technical Reports Server (NTRS)

Stassinopoulos, E. G.; Brucker, G. J.; Stauffer, C. A.

1996-01-01

This article presents an analysis of radiation effects for several select device types and technologies aboard the Combined Release and Radiation Effects Satellite (CRRES) satellite. These space-flight measurements covered a period of about 14 months of mission lifetime. Single Event Upset (SEU) data of the investigated devices from the Microelectronics Package (MEP) were processed and analyzed. Valid upset measurements were determined by correcting for invalid readings, hard failures, missing data tapes (thus voids in data), and periods over which devices were disabled from interrogation. The basic resolution time of the measurement system was confirmed to be 2 s. Lessons learned, important findings, and recommendations are presented.

Application of He ion microscopy for material analysis

NASA Astrophysics Data System (ADS)

Altmann, F.; Simon, M.; Klengel, R.

2009-05-01

Helium ion beam microscopy (HIM) is a new high resolution imaging technique. The use of Helium ions instead of electrons enables none destructive imaging combined with contrasts quite similar to that from Gallium ion beam imaging. The use of very low probe currents and the comfortable charge compensation using low energy electrons offer imaging of none conductive samples without conductive coating. An ongoing microelectronic sample with Gold/Aluminum interconnects and polymer electronic devices were chosen to evaluate HIM in comparison to scanning electron microscopy (SEM). The aim was to look for key applications of HIM in material analysis. Main focus was on complementary contrast mechanisms and imaging of none conductive samples.

Towards tunable and multifunctional interfaces: Multicomponent amorphous alloys and bilayer stacks

NASA Astrophysics Data System (ADS)

Kast, Matthew G.

Controlling the electronic structure and requisite charge transfer at and across interfaces is a grand challenge of materials science. Despite decades of research and numerous successes in the fields microelectronics and photovoltaics much work remains to be done. In many applications, whether they be in microelectronics, photovoltaics or display technology there is a demand for multiple functions at a single interface. Historically, existent materials were either discarded as an option due to known properties or tested with some application based figure of merit in mind. Following this, the quality of the material and/or the preparation of the surface/interface to which the material would be deposited was optimized. As the microelectronics and photovoltaics industries have matured, continued progress (faster, lower power transistors and more efficient, cheaper, abundant solar cells) will require new materials (possibly not previously existent) that are fundamentally better for their application than their highly optimized existent counter parts. The manifestation of this has been seen in the microelectronics field with introduction of hafnium silicates to replace silica (which had previously been monumentally successful) as the gate dielectrics for the most advanced transistors. Continued progress in efficient, cheap, abundant photovoltaics will require similar advances. Advances will be needed in the area of new abundant absorbers that can be deposited cheaply which result in materials with high efficiencies. In addition, selective contacts capable of extracting charge from efficient absorbers with low ohmic losses and low recombination rates will be needed. Presented here are two approaches to the multifunctional interface problem, first the use of amorphous alloys that open up the accessible composition space of thin films significantly and second the use of bilayers that loosen the requirements of a single film at an interface.

Multilayered microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2003-01-01

An apparatus for packaging of microelectronic devices is disclosed, wherein the package includes an integral window. The microelectronic device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can comprise, for example, a cofired ceramic frame or body. The package has an internal stepped structure made of a plurality of plates, with apertures, which are patterned with metallized conductive circuit traces. The microelectronic device can be flip-chip bonded on the plate to these traces, and oriented so that the light-sensitive side is optically accessible through the window. A cover lid can be attached to the opposite side of the package. The result is a compact, low-profile package, having an integral window that can be hermetically-sealed. The package body can be formed by low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the window being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. Multiple chips can be located within a single package, according to some embodiments. The cover lid can include a window. The apparatus is particularly suited for packaging of MEMS devices, since the number of handling steps is greatly reduced, thereby reducing the potential for contamination. The integral window can further include a lens for optically transforming light passing through the window. The package can include an array of binary optic lenslets made integral with the window. The package can include an electrically-switched optical modulator, such as a lithium niobate window attached to the package, for providing a very fast electrically-operated shutter.

Charge collection and SEU mechanisms

NASA Astrophysics Data System (ADS)

Musseau, O.

1994-01-01

In the interaction of cosmic ions with microelectronic devices a dense electron-hole plasma is created along the ion track. Carriers are separated and transported by the electric field and under the action of the concentration gradient. The subsequent collection of these carriers induces a transient current at some electrical node of the device. This "ionocurrent" (single ion induced current) acts as any electrical perturbation in the device, propagating in the circuit and inducing failures. In bistable systems (registers, memories) the stored data can be upset. In clocked devices (microprocessors) the parasitic perturbation may propagate through the device to the outputs. This type of failure only effects the information, and do not degrade the functionally of the device. The purpose of this paper is to review the mechanisms of single event upset in microelectronic devices. Experimental and theoretical results are presented, and actual questions and problems are discussed. A brief introduction recalls the creation of the dense plasma of electron-hole pairs. The basic processes for charge collection in a simple np junction (drift and diffusion) are presented. The funneling-field effect is discussed and experimental results are compared to numerical simulations and semi-empirical models. Charge collection in actual microelectronic structures is then presented. Due to the parasitic elements, coupling effects are observed. Geometrical effects, in densely packed structures, results in multiple errors. Electronic couplings are due to the carriers in excess, acting as minority carriers, that trigger parasitic bipolar transistors. Single event upset of memory cells is discussed, based on numerical and experimental data. The main parameters for device characterization are presented. From the physical interpretation of charge collection mechanisms, the intrinsic sensitivity of various microelectronic technologies is determined and compared to experimental data. Scaling laws and future trends are finally discussed.

Eye vision system using programmable micro-optics and micro-electronics

NASA Astrophysics Data System (ADS)

Riza, Nabeel A.; Amin, M. Junaid; Riza, Mehdi N.

2014-02-01

Proposed is a novel eye vision system that combines the use of advanced micro-optic and microelectronic technologies that includes programmable micro-optic devices, pico-projectors, Radio Frequency (RF) and optical wireless communication and control links, energy harvesting and storage devices and remote wireless energy transfer capabilities. This portable light weight system can measure eye refractive powers, optimize light conditions for the eye under test, conduct color-blindness tests, and implement eye strain relief and eye muscle exercises via time sequenced imaging. Described is the basic design of the proposed system and its first stage system experimental results for vision spherical lens refractive error correction.

Configurations of high-frequency ultrasonics complex vibration systems for packaging in microelectronics.

PubMed

Tsujino, Jiromaru; Harada, Yoshiki; Ihara, Shigeru; Kasahara, Kohei; Shimizu, Masanori; Ueoka, Tetsugi

2004-04-01

Ultrasonic high-frequency complex vibrations are effective for various ultrasonic high-power applications. Three types of ultrasonic complex vibration system with a welding tip vibrating elliptical to circular locus for packaging in microelectronics were studied. The complex vibration sources are using (1) a longitudinal-torsional vibration converter with diagonal slits that is driven only by a longitudinal vibration source, (2) a complex transverse vibration rod with several stepped parts that is driven by two longitudinal vibration source crossed at a right angle and (3) a longitudinal vibration circular disk and three longitudinal transducers that are installed at the circumference of the disk.

European semiconductor industry: Markets, government programs

NASA Astrophysics Data System (ADS)

Scharf, A.

1983-01-01

The marketing of the semiconductor industry in Europe and especially microelectronics which is situated between the millstones of USA and Japan is discussed. The concerned enterprises and governments appear to lack the motivation for close cooperation using European resources, corresponding to the ideas of the contracts on which the common market is based. It is felt that microelectronics is promoted in individual countries under more national perspectives, and the enterprises are pursuing strictly their own interests in cooperating with predominantly American and Japanese partners. An insight into the European semiconductor scene, its markets, as well as assistance for promotion and establishment available in the individual countries is discussed.

Reliability and quality EEE parts issues

NASA Technical Reports Server (NTRS)

Barney, Dan; Feigenbaum, Irwin

1990-01-01

NASA policy and procedures are established which govern the selection, testing, and application of electrical, electronic, and electromechanical (EEE) parts. Recent advances in the state-of-the-art of electronic parts and associated technologies can significantly impact the electronic designs and reliability of NASA space transportation avionics. Significant issues that result from these advances are examined, including: recent advances in microelectronics technology (as applied to or considered for use in NASA projects); electron packaging technology advances (concurrent with, and as a result of, the development of the advanced microelectronic devices); availability of parts used in space avionics; and standardization and integration of parts activities between projects, centers, and contractors.

The MOS silicon gate technology and the first microprocessors

NASA Astrophysics Data System (ADS)

Faggin, F.

2015-12-01

Today we are so used to the enormous capabilities of microelectronics that it is hard to imagine what it might have been like in the early Sixties and Seventies when much of the technology we use today was being developed. This paper will first present a brief history of microelectronics and computers, taking us to the threshold of the inventions of the MOS silicon gate technology and the microprocessor. These two creations provided the basic technology that would allow only a few years later to merge microelectronics and computers into the first commercial monolithic computer. By the late Seventies, the first monolithic computer weighting less than one gram, occupying a volume of less than one cubic centimeter, dissipating less than one Watt, and selling for less than ten dollars, could perform more information processing than the UNIVAC I, the first commercial electronic computer introduced in 1951, made with 5200 vacuum tubes, dissipating 125kW, weighting 13 metric tons, occupying a room larger than 35m2, and selling for more than one million dollars per unit. The first-person story of the SGT and the early microprocessors will be told by the Italian-born physicist who led both projects.

Miniaturized flow injection analysis system

DOEpatents

Folta, James A.

1997-01-01

A chemical analysis technique known as flow injection analysis, wherein small quantities of chemical reagents and sample are intermixed and reacted within a capillary flow system and the reaction products are detected optically, electrochemically, or by other means. A highly miniaturized version of a flow injection analysis system has been fabricated utilizing microfabrication techniques common to the microelectronics industry. The microflow system uses flow capillaries formed by etching microchannels in a silicon or glass wafer followed by bonding to another wafer, commercially available microvalves bonded directly to the microflow channels, and an optical absorption detector cell formed near the capillary outlet, with light being both delivered and collected with fiber optics. The microflow system is designed mainly for analysis of liquids and currently measures 38.times.25.times.3 mm, but can be designed for gas analysis and be substantially smaller in construction.

New computing systems, future computing environment, and their implications on structural analysis and design

NASA Technical Reports Server (NTRS)

Noor, Ahmed K.; Housner, Jerrold M.

1993-01-01

Recent advances in computer technology that are likely to impact structural analysis and design of flight vehicles are reviewed. A brief summary is given of the advances in microelectronics, networking technologies, and in the user-interface hardware and software. The major features of new and projected computing systems, including high performance computers, parallel processing machines, and small systems, are described. Advances in programming environments, numerical algorithms, and computational strategies for new computing systems are reviewed. The impact of the advances in computer technology on structural analysis and the design of flight vehicles is described. A scenario for future computing paradigms is presented, and the near-term needs in the computational structures area are outlined.

Critical issues regarding SEU in avionics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Normand, E.; McNulty, P.J.

1993-01-01

The energetic neutrons in the atmosphere cause microelectronics in avionic system to malfunction through a mechanism called single-event upsets (SEUs), and single-event latchup is a potential threat. Data from military and experimental flights as well as laboratory testing indicate that typical non-radiation-hardened 64K and 256K static random access memories (SRAMs) can experience a significant SEU rate at aircraft altitudes. Microelectronics in avionics systems have been demonstrated to be susceptible to SEU. Of all device types, RAMs are the most sensitive because they have the largest number of bits on a chip (e.g., an SRAM may have from 64K to 1Mmore » bits, a microprocessor 3K to 10K bits, and a logic device like an analog-to-digital converter, 12 bits). Avionics designers will need to take this susceptibility into account in current and future designs. A number of techniques are available for dealing with SEU: EDAC, redundancy, use of SEU-hard parts, reset and/or watchdog timer capability, etc. Specifications should be developed to guide avionics vendors in the analysis, prevention, and verification of neutron-induced SEU. Areas for additional research include better definition of the atmospheric neutrons and protons, development of better calculational models (e.g., those used for protons[sup 11]), and better characterization of neutron-induced latchup.« less

A novel monolithic piezoelectric actuated flexure-mechanism based wire clamp for microelectronic device packaging.

PubMed

Liang, Cunman; Wang, Fujun; Tian, Yanling; Zhao, Xingyu; Zhang, Hongjie; Cui, Liangyu; Zhang, Dawei; Ferreira, Placid

2015-04-01

A novel monolithic piezoelectric actuated wire clamp is presented in this paper to achieve fast, accurate, and robust microelectronic device packaging. The wire clamp has compact, flexure-based mechanical structure and light weight. To obtain large and robust jaw displacements and ensure parallel jaw grasping, a two-stage amplification composed of a homothetic bridge type mechanism and a parallelogram leverage mechanism was designed. Pseudo-rigid-body model and Lagrange approaches were employed to conduct the kinematic, static, and dynamic modeling of the wire clamp and optimization design was carried out. The displacement amplification ratio, maximum allowable stress, and natural frequency were calculated. Finite element analysis (FEA) was conducted to evaluate the characteristics of the wire clamp and wire electro discharge machining technique was utilized to fabricate the monolithic structure. Experimental tests were carried out to investigate the performance and the experimental results match well with the theoretical calculation and FEA. The amplification ratio of the clamp is 20.96 and the working mode frequency is 895 Hz. Step response test shows that the wire clamp has fast response and high accuracy and the motion resolution is 0.2 μm. High speed precision grasping operations of gold and copper wires were realized using the wire clamper.

Analysis of LDLR mutations in familial hypercholesterolemia patients in Greece by use of the NanoChip microelectronic array technology.

PubMed

Laios, Eleftheria; Drogari, Euridiki

2006-12-01

Three mutations in the low density lipoprotein receptor (LDLR) gene account for 49% of familial hypercholesterolemia (FH) cases in Greece. We used the microelectronic array technology of the NanoChip Molecular Biology Workstation to develop a multiplex method to analyze these single-nucleotide polymorphisms (SNPs). Primer pairs amplified the region encompassing each SNP. The biotinylated PCR amplicon was electronically addressed to streptavidin-coated microarray sites. Allele-specific fluorescently labeled oligonucleotide reporters were designed and used for detection of wild-type and SNP sequences. Genotypes were compared to PCR-restriction fragment length polymorphism (PCR-RFLP). We developed three monoplex assays (1 SNP/site) and an optimized multiplex assay (3SNPs/site). We performed 92 Greece II, 100 Genoa, and 98 Afrikaner-2 NanoChip monoplex assays (addressed to duplicate sites and analyzed separately). Of the 580 monoplex genotypings (290 samples), 579 agreed with RFLP. Duplicate sites of one sample were not in agreement with each other. Of the 580 multiplex genotypings, 576 agreed with the monoplex results. Duplicate sites of three samples were not in agreement with each other, indicating requirement for repetition upon which discrepancies were resolved. The multiplex assay detects common LDLR mutations in Greek FH patients and can be extended to accommodate additional mutations.

Solid State Research, 1973:2.

DTIC Science & Technology

MERCURY COMPOUNDS, CADMIUM COMPOUNDS, TELLURIDES, NEODYMIUM COMPOUNDS, PHOSPHATES , ELECTRON TRANSITIONS, INFRARED OPTICAL MATERIALS, CRYSTAL GROWTH, MAGNESIUM OXIDES, PHOSPHORESCENT MATERIALS, SEMICONDUCTOR DIODES, MICROELECTRONICS

Ion projection lithography: November 2000 status and sub-70-nm prospects

NASA Astrophysics Data System (ADS)

Kaesmaier, Rainer; Wolter, Andreas; Loeschner, Hans; Schunck, Stefan

2000-10-01

Among all next generation lithography (NGL) options Ion Projection Lithography (IPL) offers the smallest (particle) wavelength of 5x10- 5nm (l00keV Helium ions). Thus, 4x reduction ion-optics has diffraction limits <3nm even when using a numerical aperture as low as NAequals10-5. As part of the European MEDEA IPL project headed by Infineon Technologies wide field ion-optics have been designed by IMS- Vienna with predicted resolution of 50nm within a 12.5mm exposure field. The ion-optics part of the PDT tool (PDT-IOS) has been realized and assembled. In parallel to the PDT-IOS effort, at Leica Jena a test bench for a vertical vacuum 300mm-wafer stage has been realized. Operation of magnetic bearing supported stage movement has already been demonstrated. As ASML vacuum compatible optical wafer alignment system, with 3nm(3(sigma) ) precision demonstrated in air, has been integrated to this wafer test bench system recently. Parallel to the IPL tool development, Infineon Technologies Mask House and the Institute for Microelectronics Stuttgart are intensively working on the development of IPL stencil masks with success in producing 150mm and 200mm stencil masks as reported elsewhere. This paper is focused on information about the status of the PDT-IOS tool.

Dry etching of metallization

NASA Technical Reports Server (NTRS)

Bollinger, D.

1983-01-01

The production dry etch processes are reviewed from the perspective of microelectronic fabrication applications. The major dry etch processes used in the fabrication of microelectronic devices can be divided into two categories - plasma processes in which samples are directly exposed to an electrical discharge, and ion beam processes in which samples are etched by a beam of ions extracted from a discharge. The plasma etch processes can be distinguished by the degree to which ion bombardment contributes to the etch process. This, in turn is related to capability for anisotropic etching. Reactive Ion Etching (RIE) and Ion Beam Etching are of most interest for etching of thin film metals. RIE is generally considered the best process for large volume, anisotropic aluminum etching.

Correction of absorption-edge artifacts in polychromatic X-ray tomography in a scanning electron microscope for 3D microelectronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Laloum, D., E-mail: david.laloum@cea.fr; CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9; STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles

2015-01-15

X-ray tomography is widely used in materials science. However, X-ray scanners are often based on polychromatic radiation that creates artifacts such as dark streaks. We show this artifact is not always due to beam hardening. It may appear when scanning samples with high-Z elements inside a low-Z matrix because of the high-Z element absorption edge: X-rays whose energy is above this edge are strongly absorbed, violating the exponential decay assumption for reconstruction algorithms and generating dark streaks. A method is proposed to limit the absorption edge effect and is applied on a microelectronic case to suppress dark streaks between interconnections.

Dual manifold system and method for fluid transfer

DOEpatents

Doktycz, Mitchel J [Knoxville, TN; Bryan, William Louis [Knoxville, TN; Kress, Reid [Oak Ridge, TN

2003-05-27

A dual-manifold assembly is provided for the rapid, parallel transfer of liquid reagents from a microtiter plate to a solid state microelectronic device having biological sensors integrated thereon. The assembly includes aspiration and dispense manifolds connected by a plurality of conduits. In operation, the aspiration manifold is actuated such that the aspiration manifold is seated onto an array of reagent-filled wells of the microtiter plate. The wells are pressurized to force reagent through conduits toward the dispense manifold. A pressure pulse provided by a standard ink-jet printhead ejects nanoliter-to-picoliter droplets of reagent through an array of printhead orifices and onto test sites on the surface of the microelectronic device.

Dual manifold system and method for fluid transfer

DOEpatents

Doktycz, Mitchel J.; Bryan, William Louis; Kress, Reid

2003-09-30

A dual-manifold assembly is provided for the rapid, parallel transfer of liquid reagents from a microtiter plate to a solid state microelectronic device having biological sensors integrated thereon. The assembly includes aspiration and dispense manifolds connected by a plurality of conduits. In operation, the aspiration manifold is actuated such that the aspiration manifold is seated onto an array of reagent-filled wells of the microtiter plate. The wells are pressurized to force reagent through conduits toward the dispense manifold. A pressure pulse provided by a standard ink-jet printhead ejects nanoliter-to-picoliter droplets of reagent through an array of printhead orifices and onto test sites on the surface of the microelectronic device.

MEMS reliability: The challenge and the promise

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, W.M.; Tanner, D.M.; Miller, S.L.

1998-05-01

MicroElectroMechanical Systems (MEMS) that think, sense, act and communicate will open up a broad new array of cost effective solutions only if they prove to be sufficiently reliable. A valid reliability assessment of MEMS has three prerequisites: (1) statistical significance; (2) a technique for accelerating fundamental failure mechanisms, and (3) valid physical models to allow prediction of failures during actual use. These already exist for the microelectronics portion of such integrated systems. The challenge lies in the less well understood micromachine portions and its synergistic effects with microelectronics. This paper presents a methodology addressing these prerequisites and a description ofmore » the underlying physics of reliability for micromachines.« less

The design of radiation-hardened ICs for space - A compendium of approaches

NASA Technical Reports Server (NTRS)

Kerns, Sherra E.; Shafer, B. D; Rockett, L. R., Jr.; Pridmore, J. S.; Berndt, D. F.

1988-01-01

Several technologies, including bulk and epi CMOS, CMOS/SOI-SOS (silicon-on-insulator-silicon-on-sapphire), CML (current-mode logic), ECL (emitter-coupled logic), analog bipolar (JI, single-poly DI, and SOI) and GaAs E/D (enhancement/depletion) heterojunction MESFET, are discussed. The discussion includes the direct effects of space radiation on microelectronic materials and devices, how these effects are evidenced in circuit and device design parameter variations, the particular effects of most significance to each functional class of circuit, specific techniques for hardening high-speed circuits, design examples for integrated systems, including operational amplifiers and A/D (analog/digital) converters, and the computer simulation of radiation effects on microelectronic ISs.

Miniaturized flow injection analysis system

DOEpatents

Folta, J.A.

1997-07-01

A chemical analysis technique known as flow injection analysis is described, wherein small quantities of chemical reagents and sample are intermixed and reacted within a capillary flow system and the reaction products are detected optically, electrochemically, or by other means. A highly miniaturized version of a flow injection analysis system has been fabricated utilizing microfabrication techniques common to the microelectronics industry. The microflow system uses flow capillaries formed by etching microchannels in a silicon or glass wafer followed by bonding to another wafer, commercially available microvalves bonded directly to the microflow channels, and an optical absorption detector cell formed near the capillary outlet, with light being both delivered and collected with fiber optics. The microflow system is designed mainly for analysis of liquids and currently measures 38{times}25{times}3 mm, but can be designed for gas analysis and be substantially smaller in construction. 9 figs.

FOREWORD: Proceedings of the 39th International Microelectronics and Packaging IMAPS Poland Conference

NASA Astrophysics Data System (ADS)

Jasiński, Piotr; Górecki, Krzysztof; Bogdanowicz, Robert

2016-01-01

These proceedings are a collection of the selected articles presented at the 39th International Microelectronics and Packaging IMAPS Poland Conference, held in Gdansk, Poland on September 20-23, 2015 (IMAPS Poland 2015). The conference has been held under the scientific patronage of the International Microelectronics and Packaging Society Poland Chapter and the Committee of Electronics and Telecommunication, Polish Academy of Science and jointly hosted by the Gdansk University of Technology, Faculty of Electronics, Telecommunication and Informatics (GUT) and the Gdynia Maritime University, Faculty of Electrical Engineering (GMU). The IMAPS Poland conference series aims to advance interdisciplinary scientific information exchange and the discussion of the science and technology of advanced electronics. The IMAPS Poland 2015 conference took place in the heart of Gdansk, two minutes walking distance from the beach. The surroundings and location of the venue guaranteed excellent working and leisure conditions. The three-day conference highlighted invited talks by outstanding scientists working in important areas of electronics and electronic material science. The eight sessions covered areas in the fields of electronics packaging, interconnects on PCB, Low Temperature Co-fired Ceramic (LTCC), MEMS devices, transducers, sensors and modelling of electronic devices. The conference was attended by 99 participants from 11 countries. The conference schedule included 18 invited presentations and 78 poster presentations.

NASA SBIR product catalog, 1991

NASA Technical Reports Server (NTRS)

1991-01-01

This catalog is a partial list of products of NASA SBIR (Small Business Innovation Research) projects that have advanced to some degree into Phase 3. While most of the products evolved from work conducted during SBIR Phase 1 and 2, a few advanced to commercial status solely from Phase 1 activities. The catalog presents information provided to NASA by SBIR contractors who wished to have their products exhibited at Technology 2001, a NASA-sponsored technology transfer conference held in San Jose, California, on December 4, 5, and 6, 1991. The catalog presents the product information in the following technology areas: computer and communication systems; information processing and AI; robotics and automation; signal and image processing; microelectronics; electronic devices and equipment; microwave electronic devices; optical devices and lasers; advanced materials; materials processing; materials testing and NDE; materials instrumentation; aerodynamics and aircraft; fluid mechanics and measurement; heat transfer devices; refrigeration and cryogenics; energy conversion devices; oceanographic instruments; atmosphere monitoring devices; water management; life science instruments; and spacecraft electromechanical systems.

The NASA Electronic Parts and Packaging (NEPP) Program: An Overview

NASA Technical Reports Server (NTRS)

Label, Kenneth A.; Sampson, Michael J.

2016-01-01

This presentation provides an overview of the NEPP Program. The NEPP Mission is to provide guidance to NASA for the selection and application of microelectronics technologies; Improve understanding of the risks related to the use of these technologies in the space environment; Ensure that appropriate research is performed to meet NASA mission assurance needs. NEPP's Goals are to provide customers with appropriate and cost-effective risk knowledge to aid in: Selection and application of microelectronics technologies; Improved understanding of risks related to the use of these technologies in the space environment; Appropriate evaluations to meet NASA mission assurance needs; Guidelines for test and application of parts technologies in space; Assurance infrastructure and support for technologies in use by NASA space systems.

Gold-based electrical interconnections for microelectronic devices

DOEpatents

Peterson, Kenneth A.; Garrett, Stephen E.; Reber, Cathleen A.; Watson, Robert D.

2002-01-01

A method of making an electrical interconnection from a microelectronic device to a package, comprising ball or wedge compression bonding a gold-based conductor directly to a silicon surface, such as a polysilicon bonding pad in a MEMS or IMEMS device, without using layers of aluminum or titanium disposed in-between the conductor and the silicon surface. After compression bonding, optional heating of the bond above 363 C. allows formation of a liquid gold-silicon eutectic phase containing approximately 3% (by weight) silicon, which significantly improves the bond strength by reforming and enhancing the initial compression bond. The same process can be used for improving the bond strength of Au--Ge bonds by forming a liquid Au-12Ge eutectic phase.

Reliability Considerations of ULP Scaled CMOS in Spacecraft Systems

NASA Technical Reports Server (NTRS)

White, Mark; MacNeal, Kristen; Cooper, Mark

2012-01-01

NASA, the aerospace community, and other high reliability (hi-rel) users of advanced microelectronic products face many challenges as technology continues to scale into the deep sub-micron region. Decreasing the feature size of CMOS devices not only allows more components to be placed on a single chip, but it increases performance by allowing faster switching (or clock) speeds with reduced power compared to larger scaled devices. Higher performance, and lower operating and stand-by power characteristics of Ultra-Low Power (ULP) microelectronics are not only desirable, but also necessary to meet low power consumption design goals of critical spacecraft systems. The integration of these components in such systems, however, must be balanced with the overall risk tolerance of the project.

Geckoprinting: assembly of microelectronic devices on unconventional surfaces by transfer printing with isolated gecko setal arrays

PubMed Central

Jeong, Jaeyoung; Kim, Juho; Song, Kwangsun; Autumn, Kellar; Lee, Jongho

2014-01-01

Developing electronics in unconventional forms provides opportunities to expand the use of electronics in diverse applications including bio-integrated or implanted electronics. One of the key challenges lies in integrating semiconductor microdevices onto unconventional substrates without glue, high pressure or temperature that may cause damage to microdevices, substrates or interfaces. This paper describes a solution based on natural gecko setal arrays that switch adhesion mechanically on and off, enabling pick and place manipulation of thin microscale semiconductor materials onto diverse surfaces including plants and insects whose surfaces are usually rough and irregular. A demonstration of functional ‘geckoprinted’ microelectronic devices provides a proof of concept of our results in practical applications. PMID:25056216

Single-event effects experienced by astronauts and microelectronic circuits flown in space

DOE Office of Scientific and Technical Information (OSTI.GOV)

McNulty, P.J.

Models developed for explaining the light flashes experienced by astronauts on Apollo and Skylab missions were used with slight modification to explain upsets observed in microelectronic circuits. Both phenomena can be explained by the simple assumption that an event occurs whenever a threshold number of ionizations or isomerizations are generated within a sensitive volume. Evidence is consistent with the threshold being sharp in both cases, but fluctuations in the physical stimuli lead to a gradual rather than sharp increase in cross section with LET. Successful use of the model requires knowledge of the dimensions of the sensitive volume and themore » value of threshold. Techniques have been developed to determine these SEU parameters in modern circuits.« less

The 88-Inch Cyclotron: A One-Stop Facility for Electronics Radiation and Detector Testing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kireeff Covo, M.; Albright, R. A.; Ninemire, B. F.

In outer space down to the altitudes routinely flown by larger aircrafts, radiation can pose serious issues for microelectronics circuits. The 88-Inch Cyclotron at Lawrence Berkeley National Laboratory is a sector-focused cyclotron and home of the Berkeley Accelerator Space Effects Facility, where the effects of energetic particles on sensitive microelectronics are studied with the goal of designing electronic systems for the space community. This paper describes the flexibility of the facility and its capabilities for testing the bombardment of electronics by heavy ions, light ions, and neutrons. Experimental capabilities for the generation of neutron beams from deuteron breakups and radiationmore » testing of carbon nanotube field effect transistor will be discussed.« less

Free-world microelectronic manufacturing equipment

NASA Astrophysics Data System (ADS)

Kilby, J. S.; Arnold, W. H.; Booth, W. T.; Cunningham, J. A.; Hutcheson, J. D.; Owen, R. W.; Runyan, W. R.; McKenney, Barbara L.; McGrain, Moira; Taub, Renee G.

1988-12-01

Equipment is examined and evaluated for the manufacture of microelectronic integrated circuit devices and sources for that equipment within the Free World. Equipment suitable for the following are examined: single-crystal silicon slice manufacturing and processing; required lithographic processes; wafer processing; device packaging; and test of digital integrated circuits. Availability of the equipment is also discussed, now and in the near future. Very adequate equipment for most stages of the integrated circuit manufacturing process is available from several sources, in different countries, although the best and most widely used versions of most manufacturing equipment are made in the United States or Japan. There is also an active market in used equipment, suitable for manufacture of capable integrated circuits with performance somewhat short of the present state of the art.

Ceramic materials of low-temperature synthesis for dielectric coating applied by 3D aerosol printing used in nano- and microelectronics, lighting engineering, and spacecraft control devices

NASA Astrophysics Data System (ADS)

Ivanov, A. A.; Tuev, V. I.; Nisan, A. V.; Potapov, G. N.

2016-11-01

A synthesis technique of low-temperature ceramic material based on aluminosilicates of dendrimer morphology capable to contain up to 80 wt % of nitrides and oxides of high-melting compounds as filler has been developed. The synthesis is based on a sol-gel method followed by mechanochemical treatment and ultrasonic dispersing. Dielectric ceramic layers with the layer thickness in the nanometer range and high thermal conductivity have been obtained for the first time by 3D aerosol printing of the synthesized material. The study of the obtained ceramic coating on the metal surface (Al) has proved its use prospects in microelectronics, light engineering, and devices for special purposes.

Thin film microelectronics materials production in the vacuum of space

NASA Astrophysics Data System (ADS)

Ignatiev, A.; Sterling, M.; Horton, C.; Freundlich, A.; Pei, S.; Hill, R.

1997-01-01

The international Space Station era will open up a new dimension in the use of one of the unique attributes of space, vacuum, for the production of advanced semiconductor materials and devices for microelectronics applications. Ultra-vacuum is required for the fabrication in thin film form of high quality semiconductors. This can be accomplished behind a free flying platform similar to the current Wake Shield Facility which is specifically designed to support in-space production. The platform will require apparatus for thin film growth, a robotics interface to allow for the change out of raw materials and the harvesting of finished product, and a servicing plant incorporating Space Station that will support long-term utilization of the platform.

Space station automation study: Automation requriements derived from space manufacturing concepts,volume 2

NASA Technical Reports Server (NTRS)

1984-01-01

Automation reuirements were developed for two manufacturing concepts: (1) Gallium Arsenide Electroepitaxial Crystal Production and Wafer Manufacturing Facility, and (2) Gallium Arsenide VLSI Microelectronics Chip Processing Facility. A functional overview of the ultimate design concept incoporating the two manufacturing facilities on the space station are provided. The concepts were selected to facilitate an in-depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, sensors, and artificial intelligence. While the cost-effectiveness of these facilities was not analyzed, both appear entirely feasible for the year 2000 timeframe.

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

NASA Astrophysics Data System (ADS)

Xu, Hao; Yang, Hong; Luo, Wei-Chun; Xu, Ye-Feng; Wang, Yan-Rong; Tang, Bo; Wang, Wen-Wu; Qi, Lu-Wei; Li, Jun-Feng; Yan, Jiang; Zhu, Hui-Long; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

2016-08-01

The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it/N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

Facility safety study

NASA Technical Reports Server (NTRS)

1979-01-01

The safety of NASA's in house microelectronics facility is addressed. Industrial health standards, facility emission control requirements, operation and safety checklists, and the disposal of epitaxial vent gas are considered.

JPRS report. Science and technology: Europe and Latin America

NASA Astrophysics Data System (ADS)

1987-12-01

Topics addressed include: advanced materials; aerospace; civil aviation; automative industry; biotechnology; computers; metallurgical industries; microelectronics; science and technology policy; and lasers, sensor, and optics.

Advanced Microelectronics Technologies for Future Small Satellite Systems

NASA Technical Reports Server (NTRS)

Alkalai, Leon

1999-01-01

Future small satellite systems for both Earth observation as well as deep-space exploration are greatly enabled by the technological advances in deep sub-micron microelectronics technologies. Whereas these technological advances are being fueled by the commercial (non-space) industries, more recently there has been an exciting new synergism evolving between the two otherwise disjointed markets. In other words, both the commercial and space industries are enabled by advances in low-power, highly integrated, miniaturized (low-volume), lightweight, and reliable real-time embedded systems. Recent announcements by commercial semiconductor manufacturers to introduce Silicon On Insulator (SOI) technology into their commercial product lines is driven by the need for high-performance low-power integrated devices. Moreover, SOI has been the technology of choice for many space semiconductor manufacturers where radiation requirements are critical. This technology has inherent radiation latch-up immunity built into the process, which makes it very attractive to space applications. In this paper, we describe the advanced microelectronics and avionics technologies under development by NASA's Deep Space Systems Technology Program (also known as X2000). These technologies are of significant benefit to both the commercial satellite as well as the deep-space and Earth orbiting science missions. Such a synergistic technology roadmap may truly enable quick turn-around, low-cost, and highly capable small satellite systems for both Earth observation as well as deep-space missions.

Quantitative analysis of doped/undoped ZnO nanomaterials using laser assisted atom probe tomography: Influence of the analysis parameters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amirifar, Nooshin; Lardé, Rodrigue, E-mail: rodrigue.larde@univ-rouen.fr; Talbot, Etienne

2015-12-07

In the last decade, atom probe tomography has become a powerful tool to investigate semiconductor and insulator nanomaterials in microelectronics, spintronics, and optoelectronics. In this paper, we report an investigation of zinc oxide nanostructures using atom probe tomography. We observed that the chemical composition of zinc oxide is strongly dependent on the analysis parameters used for atom probe experiments. It was observed that at high laser pulse energies, the electric field at the specimen surface is strongly dependent on the crystallographic directions. This dependence leads to an inhomogeneous field evaporation of the surface atoms, resulting in unreliable measurements. We showmore » that the laser pulse energy has to be well tuned to obtain reliable quantitative chemical composition measurements of undoped and doped ZnO nanomaterials.« less

Twenty-Five Years of Dynamic Growth.

ERIC Educational Resources Information Center

Pipes, Lana

1980-01-01

Discusses developments in instructional technology in the past 25 years in the areas of audio, video, micro-electronics, social evolution, the space race, and living with rapidly changing technology. (CMV)

Thick, low-stress films, and coated substrates formed therefrom

DOEpatents

Henager, Jr., Charles H.; Knoll, Robert W.

1991-01-01

Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject Si-Al-O-N films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500# C. or less.

Self-healable electrically conducting wires for wearable microelectronics.

PubMed

Sun, Hao; You, Xiao; Jiang, Yishu; Guan, Guozhen; Fang, Xin; Deng, Jue; Chen, Peining; Luo, Yongfeng; Peng, Huisheng

2014-09-01

Electrically conducting wires play a critical role in the advancement of modern electronics and in particular are an important key to the development of next-generation wearable microelectronics. However, the thin conducting wires can easily break during use, and the whole device fails to function as a result. Herein, a new family of high-performance conducting wires that can self-heal after breaking has been developed by wrapping sheets of aligned carbon nanotubes around polymer fibers. The aligned carbon nanotubes offer an effective strategy for the self-healing of the electric conductivity, whereas the polymer fiber recovers its mechanical strength. A self-healable wire-shaped supercapacitor fabricated from a wire electrode of this type maintained a high capacitance after breaking and self-healing. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Data encryption standard ASIC design and development report.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Robertson, Perry J.; Pierson, Lyndon George; Witzke, Edward L.

2003-10-01

This document describes the design, fabrication, and testing of the SNL Data Encryption Standard (DES) ASIC. This device was fabricated in Sandia's Microelectronics Development Laboratory using 0.6 {micro}m CMOS technology. The SNL DES ASIC was modeled using VHDL, then simulated, and synthesized using Synopsys, Inc. software and finally IC layout was performed using Compass Design Automation's CAE tools. IC testing was performed by Sandia's Microelectronic Validation Department using a HP 82000 computer aided test system. The device is a single integrated circuit, pipelined realization of DES encryption and decryption capable of throughputs greater than 6.5 Gb/s. Several enhancements accommodate ATMmore » or IP network operation and performance scaling. This design is the latest step in the evolution of DES modules.« less

Ultralow-Loss CMOS Copper Plasmonic Waveguides.

PubMed

Fedyanin, Dmitry Yu; Yakubovsky, Dmitry I; Kirtaev, Roman V; Volkov, Valentyn S

2016-01-13

Surface plasmon polaritons can give a unique opportunity to manipulate light at a scale well below the diffraction limit reducing the size of optical components down to that of nanoelectronic circuits. At the same time, plasmonics is mostly based on noble metals, which are not compatible with microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which can outperform gold plasmonic waveguides simultaneously providing long (>40 μm) propagation length and deep subwavelength (∼λ(2)/50, where λ is the free-space wavelength) mode confinement in the telecommunication spectral range. These results create the backbone for the development of a CMOS plasmonic platform and its integration in future electronic chips.

Nano-Nucleation Characteristic of Cu-Ag Alloy Directly Electrodeposited on W Diffusion Barrier for Microelectronic Device Interconnect.

PubMed

Kim, Kang O; Kim, Sunjung

2016-05-01

Cu-Ag alloy interconnect is promising for ultra-large-scale integration (ULSI) microelectronic system of which device dimension keeps shrinking. In this study, seedless electrodeposition of Cu-Ag alloy directly on W diffusion barrier as interconnect technology is presented in respect of nano-nucleation control. Chemical equilibrium state of electrolyte was fundamentally investigated according to the pH of electrolyte because direct nano-nucleation of Cu-Ag alloy on W surface is challenging. Chelation behavior of Cu2+ and Ag+ ions with citrate (Cit) and ammonia ligands was dependent on the pH of electrolyte. The amount and kind of Cu- and Ag-based complexes determine the deposition rate, size, elemental composition, and surface morphology of Cu-Ag alloy nano-nuclei formed on W surface.

Thermal and Electrical Characterization of Alumina Substrate for Microelectronic Applications

NASA Astrophysics Data System (ADS)

Ahmad, S.; Ibrahim, A.; Alias, R.; Shapee, S. M.; Ambak, Z.; Zakaria, S. Z.; Yahya, M. R.; Mat, A. F. A.

2010-03-01

This paper reports the effect of sintering temperature on thermal and electrical properties of alumina material as substrate for microelectronic devices. Alumina materials in the form of green sheet with 1 mm thickness were sintered at 1100° C, 1300° C and 1500° C for about 20 hours using heating and cooling rates of 2° C/min. The densities were measured using densitometer and the microstructures of the samples were analyzed using SEM micrographs. Meanwhile thermal and electrical properties of the samples were measured using flash method and impedance analyzer respectively. It was found that thermal conductivity and thermal diffusivity of the substrate increases as sintering temperature increases. It was found also that the dielectric constant of alumina substrate increases as the sintering temperature increases.

Semiconductor Metal-Organic Frameworks: Future Low-Bandgap Materials.

PubMed

Usman, Muhammad; Mendiratta, Shruti; Lu, Kuang-Lieh

2017-02-01

Metal-organic frameworks (MOFs) with low density, high porosity, and easy tunability of functionality and structural properties, represent potential candidates for use as semiconductor materials. The rapid development of the semiconductor industry and the continuous miniaturization of feature sizes of integrated circuits toward the nanometer (nm) scale require novel semiconductor materials instead of traditional materials like silicon, germanium, and gallium arsenide etc. MOFs with advantageous properties of both the inorganic and the organic components promise to serve as the next generation of semiconductor materials for the microelectronics industry with the potential to be extremely stable, cheap, and mechanically flexible. Here, a perspective of recent research is provided, regarding the semiconducting properties of MOFs, bandgap studies, and their potential in microelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Surgical Coagulator With Carbon Dioxide Laser For Gynecology

NASA Astrophysics Data System (ADS)

Wolinski, Wieslaw; Kazmirowski, Antoni; Korobowicz, Witold; Olborski, Zbigniew

1987-10-01

The technical data and parameters of the CO2 surgical laser for gynecology are given. Coagulator was designed and constructed in Institute of Microelectronics and Optoelectronics Warsaw Technical University.

NASA Tech Briefs, September 1993. Volume 17, No. 9

NASA Technical Reports Server (NTRS)

1993-01-01

Topics include: Microelectronics; Electronic Components and Circuits; Electronic Systems; Physical Sciences; Materials; Computer Programs; Mechanics; Machinery/Automation; Manufacturing/Fabrication; Mathematics and Information Sciences; Life Sciences; Books and Reports.

88-Inch Cyclotron

Science.gov Websites

, commercial, and international institutions use these beams to understand the effect of radiation on microelectronics, optics, materials, and cells. Click here to see the 88-Inch Cyclotron's contributions to space

78 FR 59916 - Application(s) for Duty-Free Entry of Scientific Instruments

Federal Register 2010, 2011, 2012, 2013, 2014

2013-09-30

... Minnesota, Dept. of Chemical Engineering & Material Science, 421 Washington Avenue SE, Minneapolis, MN 55455... microelectronics, micro-electromechanical systems (MEMS) as well as nanotechnology materials and devices...

454th Brookhaven Lecture

ScienceCinema

Charles Black

2017-12-09

Black discusses examples of integrating self-assembly into semiconductor microelectronics, where advances in the ability to define circuit elements at ever-higher resolution have largely fueled more than 40 years of consistent performance improvements

Electrical properties of epoxies used in hybrid microelectronics

NASA Technical Reports Server (NTRS)

Stout, C. W.

1976-01-01

The electrical properties and basic characteristics of the structure of conductive epoxies were studied. The results of the experimental work performed to measure the electrical properties of epoxies are presented.

NASA Tech Briefs, June 1994. Volume 18, No. 6

NASA Technical Reports Server (NTRS)

1994-01-01

Topics covered include: Microelectronics; Electronic Components and Circuits; Electronic Systems; Physical Sciences; Materials; Computer Programs; Mechanics; Machinery/Automation; Manufacturing/Fabrication; Mathematics and Information Sciences; Life Sciences; Books and Reports

Microfluidic Automation using elastomeric valves and droplets: reducing reliance on external controllers

PubMed Central

Kim, Sung-Jin; Lai, David; Park, Joong Yull; Yokokawa, Ryuji

2012-01-01

This paper gives an overview of elastomeric valve- and droplet-based microfluidic systems designed to minimize the need of external pressure to control fluid flow. This concept article introduces the working principle of representative components in these devices along with relevant biochemical applications. This is followed by providing a perspective on the roles of different microfluidic valves and systems through comparison of their similarities and differences with transistors (valves) and systems in microelectronics. Despite some physical limitation of drawing analogies from electronic circuits, automated microfluidic circuit design can gain insights from electronic circuits to minimize external control units, while implementing high complexity and throughput analysis. PMID:22761019

Quality assurance and management in microelectronics companies: ISO 9000 versus Six Sigma

NASA Astrophysics Data System (ADS)

Lupan, Razvan; Kobi, Abdessamad; Robledo, Christian; Bacivarov, Ioan; Bacivarov, Angelica

2009-01-01

A strategy for the implementation of the Six Sigma method as an improvement solution for the ISO 9000:2000 Quality Standard is proposed. Our approach is focused on integrating the DMAIC cycle of the Six Sigma method with the PDCA process approach, highly recommended by the standard ISO 9000:2000. The Six Sigma steps applied to each part of the PDCA cycle are presented in detail, giving some tools and training examples. Based on this analysis the authors conclude that applying Six Sigma philosophy to the Quality Standard implementation process is the best way to achieve the optimal results in quality progress and therefore in customers satisfaction.

Low Power Shoe Integrated Intelligent Wireless Gait Measurement System

NASA Astrophysics Data System (ADS)

Wahab, Y.; Mazalan, M.; Bakar, N. A.; Anuar, A. F.; Zainol, M. Z.; Hamzah, F.

2014-04-01

Gait analysis measurement is a method to assess and identify gait events and the measurements of dynamic, motion and pressure parameters involving the lowest part of the body. This significant analysis is widely used in sports, rehabilitation as well as other health diagnostic towards improving the quality of life. This paper presents a new system empowered by Inertia Measurement Unit (IMU), ultrasonic sensors, piezoceramic sensors array, XBee wireless modules and Arduino processing unit. This research focuses on the design and development of a low power ultra-portable shoe integrated wireless intelligent gait measurement using MEMS and recent microelectronic devices for foot clearance, orientation, error correction, gait events and pressure measurement system. It is developed to be cheap, low power, wireless, real time and suitable for real life in-door and out-door environment.

JPRS Report, Science and Technology Japan, 3rd Microelectronics Symposium

DTIC Science & Technology

1990-04-20

Electric Power Insulating Substrate; Degree of Sintering, Thermal Conductivity of Aluminum Nitride Ultrafine Particles ; Effect of Baking Pressure on AlN Sintering; Thick Film Resistor for Use in AlN Ceramics.

Research News: Are VLSI Microcircuits Too Hard to Design?

ERIC Educational Resources Information Center

Robinson, Arthur L.

1980-01-01

This research news article on microelectronics discusses the scientific challenge the integrated circuit industry will have in the next decade, for designing the complicated microcircuits made possible by advancing miniaturization technology. (HM)

Germanium: giving microelectronics an efficiency boost

USGS Publications Warehouse

Mercer, Celestine N.

2015-07-30

Germanium is an essentially nontoxic element, with the exception of only a few compounds. However, if dissolved concentrations in drinking water are as high as one or more parts per million chronic diseases may occur.

Modernization (Selected Articles),

DTIC Science & Technology

1986-09-18

newly developed science such as control theory, artificial intelligence, model identification, computer and microelectronics technology, graphic...five "top guns" from around the country specializing in intellignece , mechanics, software and hardware as our technical advisors. In addition

Risk Management of New Microelectronics for NASA: Radiation Knowledge-base

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.

2004-01-01

Contents include the following: NASA Missions - implications to reliability and radiation constraints. Approach to Insertion of New Technologies Technology Knowledge-base development. Technology model/tool development and validation. Summary comments.

Nanocharacterization Challenges in a Changing Microelectronics Landscape

NASA Astrophysics Data System (ADS)

Brilloüt, Michel

2011-11-01

As the microelectronics industry enters the "nano"-era new challenges emerge. Traditional scaling of the MOS transistor faces major obstacles in fulfilling "Moore's law". New features like strain and new materials (e.g. high k—metal gate stack) are introduced in order to sustain performance increases. For a better electrostatic control, devices will use the third dimension, e.g., in gate-all-around nanowire structures. Due to the escalating cost and complexity of sub-28 nm technologies fewer industrial players can afford the development and production of advanced CMOS processes and many companies acknowledge the fact that the value in products can also be obtained in using more diversified non-digital technologies (the so-called "More-than-Moore" domain). This evolving landscape brings new requirements—discussed in this paper—in terms of physical characterization of technologies and devices.

Broadband image sensor array based on graphene-CMOS integration

NASA Astrophysics Data System (ADS)

Goossens, Stijn; Navickaite, Gabriele; Monasterio, Carles; Gupta, Shuchi; Piqueras, Juan José; Pérez, Raúl; Burwell, Gregory; Nikitskiy, Ivan; Lasanta, Tania; Galán, Teresa; Puma, Eric; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Konstantatos, Gerasimos; Koppens, Frank

2017-06-01

Integrated circuits based on complementary metal-oxide-semiconductors (CMOS) are at the heart of the technological revolution of the past 40 years, enabling compact and low-cost microelectronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible-light cameras has been impeded by the difficulty to combine semiconductors other than silicon with CMOS. Here, we report the monolithic integration of a CMOS integrated circuit with graphene, operating as a high-mobility phototransistor. We demonstrate a high-resolution, broadband image sensor and operate it as a digital camera that is sensitive to ultraviolet, visible and infrared light (300-2,000 nm). The demonstrated graphene-CMOS integration is pivotal for incorporating 2D materials into the next-generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and terahertz frequencies.

Thick, low-stress films, and coated substrates formed therefrom, and methods for making same

DOEpatents

Henager, Jr., Charles H.; Knoll, Robert W.

1992-01-01

Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the Si-Al-N film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500.degree. C. or less.

Evaluation of advanced microelectronic fluxless solder-bump contacts for hybrid microcircuits

NASA Technical Reports Server (NTRS)

Mandal, R. P.

1976-01-01

Technology for interconnecting monolithic integrated circuit chips with other components is investigated. The advantages and disadvantages of the current flip-chip approach as compared to other interconnection methods are outlined. A fluxless solder-bump contact technology is evaluated. Multiple solder-bump contacts were formed on silicon integrated circuit chips. The solder-bumps, comprised of a rigid nickel under layer and a compliant solder overlayer, were electroformed onto gold device pads with the aid of thick dry film photomasks. Different solder alloys and the use of conductive epoxy for bonding were explored. Fluxless solder-bump bond quality and reliability were evaluated by measuring the effects of centrifuge, thermal cycling, and high temperature storage on bond visual characteristics, bond electrical continuity, and bond shear tests. The applicability and suitability of this technology for hybrid microelectronic packaging is discussed.

Printing of microstructure strain sensor for structural health monitoring

NASA Astrophysics Data System (ADS)

Le, Minh Quyen; Ganet, Florent; Audigier, David; Capsal, Jean-Fabien; Cottinet, Pierre-Jean

2017-05-01

Recent advances in microelectronics and materials should allow the development of integrated sensors with transduction properties compatible with being printed directly onto a 3D substrate, especially metallic and polymer substrates. Inorganic and organic electronic materials in microstructured and nanostructured forms, intimately integrated in ink, offer particularly attractive characteristics, with realistic pathways to sophisticated embodiments. Here, we report on these strategies and demonstrate the potential of 3D-printed microelectronics based on a structural health monitoring (SHM) application for the precision weapon systems. We show that our printed sensors can be employed in non-invasive, high-fidelity and continuous strain monitoring of handguns, making it possible to implement printed sensors on a 3D substrate in either SHM or remote diagnostics. We propose routes to commercialization and novel device opportunities and highlight the remaining challenges for research.

The Co-60 gamma-ray irradiation effects on the Al/HfSiO4/p-Si/Al MOS capacitors

NASA Astrophysics Data System (ADS)

Lok, R.; Kaya, S.; Karacali, H.; Yilmaz, E.

2017-12-01

In this work, the initial interface trap density (Nit) to examine device compability for microelectronics and then the Co-60 gamma irradiation responses of Al/HfSiO4/p-Si/Al (MOS) capacitors were investigated in various dose ranges up to 70 Gy. Pre-irradiation response of the devices was evaluated from high frequency (HF) and low frequency (LF) capacitance method and the Nit was calculated as 9.91 × 1011 cm-2 which shows that the HfSiO4/p-Si interface quality is convenient for microelectronics applications. The irradiation responses of the devices were carried out from flat-band and mid-gap voltage shifts obtained from stretch of capacitance characteristics prior to and after irradiation. The results show that the flat band voltages very slightly shifted to positive voltage values demonstrating the enhancement of negative charge trapping in device structure. The sensitivity of the Al/HfSiO4/p-Si/Al MOS capacitors was found to be 4.41 mV/Gy for 300 nm-thick HfSiO4 gate dielectrics. This value approximately 6.5 times smaller compared to the same thickness conventional SiO2 based MOS devices. Therefore, HfSiO4 exhibits crucial irradiation tolerance in gamma irradiation environment. Consequently, HfSiO4 dielectrics may have significant usage for microelectronic technology as a radiation hard material where radiation field exists such as in space applications.

Systematic Computation of Nonlinear Cellular and Molecular Dynamics with Low-Power CytoMimetic Circuits: A Simulation Study

PubMed Central

Papadimitriou, Konstantinos I.; Stan, Guy-Bart V.; Drakakis, Emmanuel M.

2013-01-01

This paper presents a novel method for the systematic implementation of low-power microelectronic circuits aimed at computing nonlinear cellular and molecular dynamics. The method proposed is based on the Nonlinear Bernoulli Cell Formalism (NBCF), an advanced mathematical framework stemming from the Bernoulli Cell Formalism (BCF) originally exploited for the modular synthesis and analysis of linear, time-invariant, high dynamic range, logarithmic filters. Our approach identifies and exploits the striking similarities existing between the NBCF and coupled nonlinear ordinary differential equations (ODEs) typically appearing in models of naturally encountered biochemical systems. The resulting continuous-time, continuous-value, low-power CytoMimetic electronic circuits succeed in simulating fast and with good accuracy cellular and molecular dynamics. The application of the method is illustrated by synthesising for the first time microelectronic CytoMimetic topologies which simulate successfully: 1) a nonlinear intracellular calcium oscillations model for several Hill coefficient values and 2) a gene-protein regulatory system model. The dynamic behaviours generated by the proposed CytoMimetic circuits are compared and found to be in very good agreement with their biological counterparts. The circuits exploit the exponential law codifying the low-power subthreshold operation regime and have been simulated with realistic parameters from a commercially available CMOS process. They occupy an area of a fraction of a square-millimetre, while consuming between 1 and 12 microwatts of power. Simulations of fabrication-related variability results are also presented. PMID:23393550

Vacuum Microelectronic Field Emission Array Devices for Microwave Amplification.

NASA Astrophysics Data System (ADS)

Mancusi, Joseph Edward

This dissertation presents the design, analysis, and measurement of vacuum microelectronic devices which use field emission to extract an electron current from arrays of silicon cones. The arrays of regularly-spaced silicon cones, the field emission cathodes or emitters, are fabricated with an integrated gate electrode which controls the electric field at the tip of the cone, and thus the electron current. An anode or collector electrode is placed above the array to collect the emission current. These arrays, which are fabricated in a standard silicon processing facility, are developed for use as high power microwave amplifiers. Field emission has been studied extensively since it was first characterized in 1928, however due to the large electric fields required practical field emission devices are difficult to make. With the development of the semiconductor industry came the development of fabrication equipment and techniques which allow for the manufacture of the precision micron-scale structures necessary for practical field emission devices. The active region of a field emission device is a vacuum, therefore the electron travel is ballistic. This analysis of field emission devices includes electric field and electron emission modeling, development of a device equivalent circuit, analysis of the parameters in the equivalent circuit, and device testing. Variations in device structure are taken into account using a statistical model based upon device measurements. Measurements of silicon field emitter arrays at DC and RF are presented and analyzed. In this dissertation, the equivalent circuit is developed from the analysis of the device structure. The circuit parameters are calculated from geometrical considerations and material properties, or are determined from device measurements. It is necessary to include the emitter resistance in the equivalent circuit model since relatively high resistivity silicon wafers are used. As is demonstrated, the circuit model accurately predicts the magnitude of the emission current at a number of typical bias current levels when the device is operating at frequencies within the range of 10 MHz to 1 GHz. At low frequencies and at high frequencies within this range, certain parameters are negligible, and simplifications may be made in the equivalent circuit model.

RADIANCE PROCESS EVALUATION FOR PARTICLE REMOVAL

EPA Science Inventory

The microelectronics industry (wafer, flat panel displays, photomasks, and storage media) is transitioning to higher device densities and larger substrate formats. These changes will challenge standard cleaning methods and will require significant increases to the fabricator inf...

Biogenesis of Selenium Nanoparticles Using Green Chemistry.

PubMed

Shoeibi, Sara; Mozdziak, Paul; Golkar-Narenji, Afsaneh

2017-11-09

Selenium binds some enzymes such as glutathione peroxidase and thioredoxin reductase, which may be activated in biological infections and oxidative stress. Chemical and physical methods for synthesizing nanoparticles, apart from being expensive, have their own particular risks. However, nanoparticle synthesis through green chemistry is a safe procedure that different biological sources such as bacteria, fungi, yeasts, algae and plants can be the catalyst bed for processing. Synthesis of selenium nanoparticles (SeNPs) by macro/microorganisms causes variation in morphology and shape of the particles is due to diversity of reduction enzymes in organisms. Reducing enzymes of microorganisms by changing the status of redox convert metal ions (Se 2- ) to SeNPs without charge (Se 0 ). Biological activity of SeNPs includes their protective role against DNA oxidation. Because of the biological and industrial properties, SeNPs have wide applications in the fields of medicine, microelectronic, agriculture and animal husbandry. SeNPs can show strong antimicrobial effects on the growth and proliferation of microorganisms in a dose-dependent manner. The objective of this review is to consider SeNPs applications to various organisms.

Microengineering of magnetic bearings and actuators

NASA Astrophysics Data System (ADS)

Ghantasala, Muralihar K.; Qin, LiJiang; Sood, Dinesh K.; Zmood, Ronald B.

2000-06-01

Microengineering has evolved in the last decade as a subject of its own with the current research encompassing every possible area of devices from electromagnetic to optical and bio-micro electromechanical systems (MEMS). The primary advantage of the micro system technology is its small size, potential to produce high volume and low cost devices. However, the major impediments in the successful realization of many micro devices in practice are the reliability, packaging and integration with the existing microelectronics technology. Microengineering of actuators has recently grown tremendously due to its possible applicability to a wide range of devices of practical importance and the availability of a choice of materials. Selection of materials has been one of the important aspects of the design and fabrication of many micro system and actuators. This paper discusses the issues related to the selection of materials and subsequently their effect on the performance of the actuator. These will be discussed taking micro magnetic actuators and bearings, in particular, as examples. Fabrication and processing strategies and performance evaluation methods adopted will be described. Current status of the technology and projected futuristic applications in this area will be reviewed.

Thermal-Wave Imaging.

ERIC Educational Resources Information Center

Rosencwaig, Allan

1982-01-01

Thermal features of and beneath the surface of a sample can be detected and imaged with a thermal-wave microscope. Various methodologies for the excitation and detection of thermal waves are discussed, and several applications, primarily in microelectronics, are presented. (Author)

NOVEL SYNTHETIC METHOD FOR NARROW DISTRIBUTED COLLOIDAL SILICALITE

EPA Science Inventory

Preparation of zeolites is important for a variety of applications such as microelectronics, separation agents, ion exchange, catalysis, adsorbents, nanocomposites and zeolite membranes. Silicalite-1 is a crystalline, microporous polymorph of silicon dioxide with the MFI framewo...

Resources in Technology.

ERIC Educational Resources Information Center

McCrory, David L.; Maughan, George R.

This document--intended for secondary school and college students--contains technology education instructional units on engines and power, energy conversion, energy futures, energy sources, communication and society, energy and power in communication, communication systems, microelectronics in communication, transportation in society, energy and…

Calculation of cosmic ray induced single event upsets: Program CRUP (Cosmic Ray Upset Program)

NASA Astrophysics Data System (ADS)

Shapiro, P.

1983-09-01

This report documents PROGRAM CRUP, COSMIC RAY UPSET PROGRAM. The computer program calculates cosmic ray induced single-event error rates in microelectronic circuits exposed to several representative cosmic-ray environments.

Design, processing and testing of LSI arrays hybrid microelectronics task

NASA Technical Reports Server (NTRS)

Himmel, R. P.; Stuhlbarg, S. M.; Salmassy, S.

1978-01-01

Those factors affecting the cost of electronic subsystems utilizing LSI microcircuits were determined and the most efficient methods for low cost packaging of LSI devices as a function of density and reliability were developed.

Risk Management of Microelectronics: The NASA Electronic Parts and Packaging (NEPP) Program

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Sampson, Michael J.

2005-01-01

This viewgraph information provides information on how the NASA Electronic Parts and Packaging (NEPP) Program evaluates the reliability of technologies for Electrical, Electronic, and Electromechanical (EEE) parts, and their suitability for spacecraft applications.

Microelectronic DNA assay for the detection of BRCA1 gene mutations

NASA Technical Reports Server (NTRS)

Chen, Hua; Han, Jie; Li, Jun; Meyyappan, Meyya

2004-01-01

Mutations in BRCA1 are characterized by predisposition to breast cancer, ovarian cancer and prostate cancer as well as colon cancer. Prognosis for this cancer survival depends upon the stage at which cancer is diagnosed. Reliable and rapid mutation detection is crucial for the early diagnosis and treatment. We developed an electronic assay for the detection of a representative single nucleotide polymorphism (SNP), deletion and insertion in BRCA1 gene by the microelectronics microarray instrumentation. The assay is rapid, and it takes 30 minutes for the immobilization of target DNA samples, hybridization, washing and readout. The assay is multiplexing since it is carried out at the same temperature and buffer conditions for each step. The assay is also highly specific, as the signal-to-noise ratio is much larger than recommended value (72.86 to 321.05 vs. 5) for homozygotes genotyping, and signal ratio close to the perfect value 1 for heterozygotes genotyping (1.04).

Phase transformation in SiOx/SiO₂ multilayers for optoelectronics and microelectronics applications.

PubMed

Roussel, M; Talbot, E; Pratibha Nalini, R; Gourbilleau, F; Pareige, P

2013-09-01

Due to the quantum confinement, silicon nanoclusters (Si-ncs) embedded in a dielectric matrix are of prime interest for new optoelectronics and microelectronics applications. In this context, SiO(x)/SiO₂ multilayers have been prepared by magnetron sputtering and subsequently annealed to induce phase separation and Si clusters growth. The aim of this paper is to study phase separation processes and formation of nanoclusters in SiO(x)/SiO₂ multilayers by atom probe tomography. Influences of the silicon supersaturation, annealing temperature and SiO(x) and SiO₂ layer thicknesses on the final microstructure have been investigated. It is shown that supersaturation directly determines phase separation regime between nucleation/classical growth and spinodal decomposition. Annealing temperature controls size of the particles and interface with the surrounding matrix. Layer thicknesses directly control Si-nc shapes from spherical to spinodal-like structures. Copyright © 2012 Elsevier B.V. All rights reserved.

Porous electrode apparatus for electrodeposition of detailed metal structures or microelectronic interconnections

DOEpatents

Griffiths, Stewart K.; Nilson, Robert H.; Hruby, Jill M.

2002-01-01

An apparatus and procedure for performing microfabrication of detailed metal structures by electroforming metal deposits within small cavities. Two primary areas of application are: the LIGA process which manufactures complex three-dimensional metal parts and the damascene process used for electroplating line and via interconnections of microelectronic devices. A porous electrode held in contact or in close proximity with a plating substrate or mold top to ensure one-dimensional and uniform current flow into all mold cavities is used. Electrolyte is pumped over the exposed surface of the porous electrode to ensure uniform ion concentrations at this external surface. The porous electrode prevents electrolyte circulation within individual mold cavities, avoiding preferential enhancement of ion transport in cavities having favorable geometries. Both current flow and ion transport are one-dimensional and identical in all mold cavities, so all metal deposits grow at the same rate eliminating nonuniformities of the prior art.

Study of a two-stage photobase generator for photolithography in microelectronics.

PubMed

Turro, Nicholas J; Li, Yongjun; Jockusch, Steffen; Hagiwara, Yuji; Okazaki, Masahiro; Mesch, Ryan A; Schuster, David I; Willson, C Grant

2013-03-01

The investigation of the photochemistry of a two-stage photobase generator (PBG) is described. Absorption of a photon by a latent PBG (1) (first step) produces a PBG (2). Irradiation of 2 in the presence of water produces a base (second step). This two-photon sequence (1 + hν → 2 + hν → base) is an important component in the design of photoresists for pitch division technology, a method that doubles the resolution of projection photolithography for the production of microelectronic chips. In the present system, the excitation of 1 results in a Norrish type II intramolecular hydrogen abstraction to generate a 1,4-biradiacal that undergoes cleavage to form 2 and acetophenone (Φ ∼ 0.04). In the second step, excitation of 2 causes cleavage of the oxime ester (Φ = 0.56) followed by base generation after reaction with water.

Active Microelectronic Neurosensor Arrays for Implantable Brain Communication Interfaces

PubMed Central

Song, Y.-K.; Borton, D. A.; Park, S.; Patterson, W. R.; Bull, C. W.; Laiwalla, F.; Mislow, J.; Simeral, J. D.; Donoghue, J. P.; Nurmikko, A. V.

2010-01-01

We have built a wireless implantable microelectronic device for transmitting cortical signals transcutaneously. The device is aimed at interfacing a microelectrode array cortical to an external computer for neural control applications. Our implantable microsystem enables presently 16-channel broadband neural recording in a non-human primate brain by converting these signals to a digital stream of infrared light pulses for transmission through the skin. The implantable unit employs a flexible polymer substrate onto which we have integrated ultra-low power amplification with analog multiplexing, an analog-to-digital converter, a low power digital controller chip, and infrared telemetry. The scalable 16-channel microsystem can employ any of several modalities of power supply, including via radio frequency by induction, or infrared light via a photovoltaic converter. As of today, the implant has been tested as a sub-chronic unit in non-human primates (~ 1 month), yielding robust spike and broadband neural data on all available channels. PMID:19502132

DUV phase mask for 100 nm period grating printing

NASA Astrophysics Data System (ADS)

Jourlin, Y.; Bourgin, Y.; Reynaud, S.; Parriaux, O.; Talneau, A.; Karvinen, P.; Passilly, N.; Zain, A. Md.; De La Rue, R. M.

2008-04-01

Whereas microelectronic lithography is heading to the 32 nm node and discussing immersion and double-patterning strategies, there is much which can be done with the 45 nm node in microoptics for white light processing. For instance, one of the most demanding applications in terms of achievable period is the LCD lossless polarizer, which can transmit the TM polarization and reflect the TE polarization evenly all through the visible spectrum - provided that a 1D metal grid of 100 nm period can be fabricated. The manufacture of such polarizing panels cannot resort to the step & repeat cameras of microelectronics since the substrates are too large, too thin, too wavy and full of contaminants. There is therefore a need for specific fabrication techniques. It is one of these techniques that a subgroup of partners belonging to two of the Networks of Excellence of the European Community, NEMO and ePIXnet, have decided to explore together.

High peak power solid-state laser for micromachining of hard materials

NASA Astrophysics Data System (ADS)

Herbst, Ludolf; Quitter, John P.; Ray, Gregory M.; Kuntze, Thomas; Wiessner, Alexander O.; Govorkov, Sergei V.; Heglin, Mike

2003-06-01

Laser micromachining has become a key enabling technology in the ever-continuing trend of miniaturization in microelectronics, micro-optics, and micromechanics. New applications have become commercially viable due to the emergence of innovative laser sources, such as diode pumped solid-state lasers (DPSSL), and the progress in processing technology. Examples of industrial applications are laser-drilled micro-injection nozzles for highly efficient automobile engines, or manufacturing of complex spinnerets for production of synthetic fibers. The unique advantages of laser-based techniques stem from their ability to produce high aspect ratio holes, while yielding low heat affected zones with exceptional surface quality, roundness and taper tolerances. Additionally, the ability to drill blind holes and slots in very hard materials such as diamond, silicon, sapphire, ceramics and steel is of great interest for many applications in microelectronics, semiconductor and automotive industry. This kind of high quality, high aspect ratio micromachining requires high peak power and short pulse durations.

Nanoscale temperature mapping in operating microelectronic devices

DOE PAGES

Mecklenburg, Matthew; Hubbard, William A.; White, E. R.; ...

2015-02-05

We report that modern microelectronic devices have nanoscale features that dissipate power nonuniformly, but fundamental physical limits frustrate efforts to detect the resulting temperature gradients. Contact thermometers disturb the temperature of a small system, while radiation thermometers struggle to beat the diffraction limit. Exploiting the same physics as Fahrenheit’s glass-bulb thermometer, we mapped the thermal expansion of Joule-heated, 80-nanometer-thick aluminum wires by precisely measuring changes in density. With a scanning transmission electron microscope (STEM) and electron energy loss spectroscopy (EELS), we quantified the local density via the energy of aluminum’s bulk plasmon. Rescaling density to temperature yields maps with amore » statistical precision of 3 kelvin/hertz ₋1/2, an accuracy of 10%, and nanometer-scale resolution. Lastly, many common metals and semiconductors have sufficiently sharp plasmon resonances to serve as their own thermometers.« less

Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

NASA Astrophysics Data System (ADS)

Olejník, K.; Schuler, V.; Marti, X.; Novák, V.; Kašpar, Z.; Wadley, P.; Campion, R. P.; Edmonds, K. W.; Gallagher, B. L.; Garces, J.; Baumgartner, M.; Gambardella, P.; Jungwirth, T.

2017-05-01

Antiferromagnets offer a unique combination of properties including the radiation and magnetic field hardness, the absence of stray magnetic fields, and the spin-dynamics frequency scale in terahertz. Recent experiments have demonstrated that relativistic spin-orbit torques can provide the means for an efficient electric control of antiferromagnetic moments. Here we show that elementary-shape memory cells fabricated from a single-layer antiferromagnet CuMnAs deposited on a III-V or Si substrate have deterministic multi-level switching characteristics. They allow for counting and recording thousands of input pulses and responding to pulses of lengths downscaled to hundreds of picoseconds. To demonstrate the compatibility with common microelectronic circuitry, we implemented the antiferromagnetic bit cell in a standard printed circuit board managed and powered at ambient conditions by a computer via a USB interface. Our results open a path towards specialized embedded memory-logic applications and ultra-fast components based on antiferromagnets.

Integrated microelectronics for smart textiles.

PubMed

Lauterbach, Christl; Glaser, Rupert; Savio, Domnic; Schnell, Markus; Weber, Werner

2005-01-01

The combination of textile fabrics with microelectronics will lead to completely new applications, thus achieving elements of ambient intelligence. The integration of sensor or actuator networks, using fabrics with conductive fibres as a textile motherboard enable the fabrication of large active areas. In this paper we describe an integration technology for the fabrication of a "smart textile" based on a wired peer-to-peer network of microcontrollers with integrated sensors or actuators. A self-organizing and fault-tolerant architecture is accomplished which detects the physical shape of the network. Routing paths are formed for data transmission, automatically circumventing defective or missing areas. The network architecture allows the smart textiles to be produced by reel-to-reel processes, cut into arbitrary shapes subsequently and implemented in systems at low installation costs. The possible applications are manifold, ranging from alarm systems to intelligent guidance systems, passenger recognition in car seats, air conditioning control in interior lining and smart wallpaper with software-defined light switches.

Highly photoresponsive and wavelength-selective circularly-polarized-light detector based on metal-oxides hetero-chiral thin film.

PubMed

Lee, Seung Hee; Singh, Dhruv Pratap; Sung, Ji Ho; Jo, Moon-Ho; Kwon, Ki Chang; Kim, Soo Young; Jang, Ho Won; Kim, Jong Kyu

2016-01-22

A highly efficient circularly-polarized-light detector with excellent wavelength selectivity is demonstrated with an elegant and simple microelectronics-compatible way. The circularly-polarized-light detector based on a proper combination of the geometry-controlled TiO2-SnO2 hetero-chiral thin film as an effective chiroptical filter and the Si active layer shows excellent chiroptical response with external quantum efficiency as high as 30% and high helicity selectivity of ~15.8% in an intended wavelength range. Furthermore, we demonstrated the ability of manipulating both bandwidth and responsivity of the detector simultaneously in whole visible wavelength range by a precise control over the geometry and materials constituting hetero-chiral thin film. The high efficiency, wavelength selectivity and compatibility with conventional microelectronics processes enabled by the proposed device can result in remarkable developments in highly integrated photonic platforms utilizing chiroptical responses.

Highly photoresponsive and wavelength-selective circularly-polarized-light detector based on metal-oxides hetero-chiral thin film

PubMed Central

Lee, Seung Hee; Singh, Dhruv Pratap; Sung, Ji Ho; Jo, Moon-Ho; Kwon, Ki Chang; Kim, Soo Young; Jang, Ho Won; Kim, Jong Kyu

2016-01-01

A highly efficient circularly-polarized-light detector with excellent wavelength selectivity is demonstrated with an elegant and simple microelectronics-compatible way. The circularly-polarized-light detector based on a proper combination of the geometry-controlled TiO2-SnO2 hetero-chiral thin film as an effective chiroptical filter and the Si active layer shows excellent chiroptical response with external quantum efficiency as high as 30% and high helicity selectivity of ~15.8% in an intended wavelength range. Furthermore, we demonstrated the ability of manipulating both bandwidth and responsivity of the detector simultaneously in whole visible wavelength range by a precise control over the geometry and materials constituting hetero-chiral thin film. The high efficiency, wavelength selectivity and compatibility with conventional microelectronics processes enabled by the proposed device can result in remarkable developments in highly integrated photonic platforms utilizing chiroptical responses. PMID:26795601

Spatial light modulator array with heat minimization and image enhancement features

DOEpatents

Jain, Kanti [Briarcliff Manor, NY; Sweatt, William C [Albuquerque, NM; Zemel, Marc [New Rochelle, NY

2007-01-30

An enhanced spatial light modulator (ESLM) array, a microelectronics patterning system and a projection display system using such an ESLM for heat-minimization and resolution enhancement during imaging, and the method for fabricating such an ESLM array. The ESLM array includes, in each individual pixel element, a small pixel mirror (reflective region) and a much larger pixel surround. Each pixel surround includes diffraction-grating regions and resolution-enhancement regions. During imaging, a selected pixel mirror reflects a selected-pixel beamlet into the capture angle of a projection lens, while the diffraction grating of the pixel surround redirects heat-producing unused radiation away from the projection lens. The resolution-enhancement regions of selected pixels provide phase shifts that increase effective modulation-transfer function in imaging. All of the non-selected pixel surrounds redirect all radiation energy away from the projection lens. All elements of the ESLM are fabricated by deposition, patterning, etching and other microelectronic process technologies.

Highly photoresponsive and wavelength-selective circularly-polarized-light detector based on metal-oxides hetero-chiral thin film

NASA Astrophysics Data System (ADS)

Lee, Seung Hee; Singh, Dhruv Pratap; Sung, Ji Ho; Jo, Moon-Ho; Kwon, Ki Chang; Kim, Soo Young; Jang, Ho Won; Kim, Jong Kyu

2016-01-01

A highly efficient circularly-polarized-light detector with excellent wavelength selectivity is demonstrated with an elegant and simple microelectronics-compatible way. The circularly-polarized-light detector based on a proper combination of the geometry-controlled TiO2-SnO2 hetero-chiral thin film as an effective chiroptical filter and the Si active layer shows excellent chiroptical response with external quantum efficiency as high as 30% and high helicity selectivity of ~15.8% in an intended wavelength range. Furthermore, we demonstrated the ability of manipulating both bandwidth and responsivity of the detector simultaneously in whole visible wavelength range by a precise control over the geometry and materials constituting hetero-chiral thin film. The high efficiency, wavelength selectivity and compatibility with conventional microelectronics processes enabled by the proposed device can result in remarkable developments in highly integrated photonic platforms utilizing chiroptical responses.

Wetting properties of Au/Sn solders for microelectronics

NASA Astrophysics Data System (ADS)

Peterson, K. A.; Williams, C. B.

Hermetic sealing of microelectronic packages with Au/Sn solder is critically dependent upon good wetting. In studying specific problems in hermetic sealing, a solderability test based on ASTM standard F-357-78 has proven useful. The test has helped isolate and quantify the effects of contamination due to epoxy die attach and related handling, thermal preconditioning of packages, gold plating thickness, time and temperature during sealing, and solder alloy composition as they affect wetting. Some differences in hardware have been documented between manufacturing lots, but the overriding factors have been contamination which occurs during packaging process flows and thermal preconditioning during processing. The paper includes a review of metallurgical aspects of soldering to a non-inert surface and an examination of microstructural differences in seal joints. The results also quantify the conventional wisdom that alloys which are on the tin-rich side of the eutectic composition offer superior wetting properties.

Nanophotonic applications for silicon-on-insulator (SOI)

NASA Astrophysics Data System (ADS)

de la Houssaye, Paul R.; Russell, Stephen D.; Shimabukuro, Randy L.

2004-07-01

Silicon-on-insulator is a proven technology for very large scale integration of microelectronic devices. The technology also offers the potential for development of nanophotonic devices and the ability to interface such devices to the macroscopic world. This paper will report on fabrication techniques used to form nano-structured silicon wires on an insulating structure that is amenable to interfacing nanostructured sensors with high-performance microelectronic circuitry for practical implementation. Nanostructures formed on silicon-on-sapphire can also exploit the transparent substrate for novel device geometries. This research harnesses the unique properties of a high-quality single crystal film of silicon on sapphire and uses the film thickness as one of the confinement dimensions. Lateral arrays of silicon nanowires were fabricated in the thin (5 to 20 nm) silicon layer and studied. This technique offers simplified contact to individual wires and provides wire surfaces that are more readily accessible for controlled alteration and device designs.

West Europe report: Science and technology. FRG: Concept paper on microelectronics, communications technology

NASA Astrophysics Data System (ADS)

1984-07-01

Precisely because the Federal Republic of Germany is a nation with a strong export orientation the capability to develop and apply, with an eye to the market, modern information and communication technologies and microelectronics which provides the basis for them has a very important bearing on the nations competitive position. To attain a leadership position in information technology, the men and women of the FRG must take up the challenge of this technology in terms of training and continuing education as well as in the media and in public life. Industry must agressively seek out markets and engage in international competition and the state must remove existing obstacles and create the kind of conditions that will make its assistance programs most effective. Programs which reflect the government's resolve to meet the challenge of information technology and to help improve the FRG's competitive position in this field are outlined.

Microelectronics, radiation, and superconductivity.

PubMed Central

Gochfeld, M

1990-01-01

Among the costs of technology are health hazards that face employees and consumers. New advances in the highly competitive field of microelectronics involve exposure to a variety of hazards such as gallium arsenide. Small high-technology industries appear unprepared to invest in health and safety. Although stray electromagnetic fields are not a new development, researchers are beginning to assemble data indicating that such fields pose a significant cancer risk under certain circumstances. Data have been obtained on fields associated with power lines on the one hand and consumer products on the other. Although not conclusive, the data are sufficient to warrant carefully designed research into the risks posed by electromagnetic fields. Because the scientific issues require research, there is a need to make basic social value decisions that will determine which technologies will be developed and which ones may be set aside because of their danger at the present time. PMID:2401267

Creating Nanotechnicians for the 21st Century Workplace

NASA Astrophysics Data System (ADS)

Burke, Michael; Jean, Kristi; Brown, Cheryl; Barrett, Rick; Leopold, Carrie

The North Dakota State College of Science (NDSCS) Nanoscience Technology Training Program was designed and implemented to meet the growing demand for technicians skilled in nanofabrication, surface analysis and production of various micro and nano-scale products. The program emphasizes hands-on training and utilizes a state-of-the-art Applied Science and Advanced Manufacturing Training Laboratory to develop the KSA’s (knowledge, skills, attitudes) needed by industry. Two-year Associate in Applied Science degree, diploma and certificate tracks are offered in four industry focus areas; nanotechnology, microelectronics technology, bio-fuels technology and biotechnology. Students learn to work in multidisciplinary teams on design, prototyping, analysis and manufacturing processes of products. The program also hosts an extensive hands-on outreach program which interacted with over 8000 secondary school science students and 500 teachers in the first 12 months of operation.

Nuclear Reaction Models Responsible for Simulation of Neutron-induced Soft Errors in Microelectronics

NASA Astrophysics Data System (ADS)

Watanabe, Y.; Abe, S.

2014-06-01

Terrestrial neutron-induced soft errors in MOSFETs from a 65 nm down to a 25 nm design rule are analyzed by means of multi-scale Monte Carlo simulation using the PHITS-HyENEXSS code system. Nuclear reaction models implemented in PHITS code are validated by comparisons with experimental data. From the analysis of calculated soft error rates, it is clarified that secondary He and H ions provide a major impact on soft errors with decreasing critical charge. It is also found that the high energy component from 10 MeV up to several hundreds of MeV in secondary cosmic-ray neutrons has the most significant source of soft errors regardless of design rule.

Aerodynamic Simulation Analysis of Unmanned Airborne Electronic Bomb

NASA Astrophysics Data System (ADS)

Yang, Jiaoying; Guo, Yachao

2017-10-01

For microelectronic bombs for UAVs, on the basis of the use of rotors to lift the insurance on the basis of ammunition, increased tail to increase stability. The aerodynamic simulation of the outer structure of the ammunition was carried out by FLUENT software. The resistance coefficient, the lift coefficient and the pitch moment coefficient under different angle of attack and Mach number were obtained, and the aerodynamic characteristics of the electronic bomb were studied. The pressure line diagram and the velocity line diagram of the flow around the bomb are further analyzed, and the rationality of the external structure is verified, which provides a reference for the subsequent design of the electronic bomb.

International Perspective on Government Nanotechnology Funding in 2005

NASA Astrophysics Data System (ADS)

Roco, M. C.

2005-12-01

The worldwide investment in nanotechnology research and development (R&D) reported by national government organizations and EC has increased approximately 9-fold in the last 8 years - from 432 million in 1997 to about 4,100 million in 2005. The proportion of national government investments for: academic R&D and education are between 20% (Korea, Taiwan) and 65% (US), industrial R&D - between 5% (US) and 60% (Korea, Taiwan), and core facilities and government laboratories - about 20-25% in all major contributing economies. This evaluation uses the NNI definition of nanotechnology (that excludes MEMS or microelectronics), and is based on direct information and analysis with managers of nanotechnology R&D programs in the respective countries.

Biomedical sensing and display concept improves brain wave monitoring

NASA Technical Reports Server (NTRS)

Trent, R. L.

1970-01-01

Concept for increasing effectiveness of biomedical sensing and display promises greater monitoring capability while lessening high skill requirements in operating personnel. New concept overcomes deficiencies of current system by employing increased number of probes and microelectronic preamplifiers.

Two autowire versions for CDC-3200 and IBM-360

NASA Technical Reports Server (NTRS)

Billingsley, J. B.

1972-01-01

Microelectronics program was initiated to evaluate circuitry, packaging methods, and fabrication approaches necessary to produce completely procured logic system. Two autowire programs were developed for CDC-3200 and IBM-360 computers for use in designing logic systems.

Planning for the semiconductor manufacturer of the future

NASA Technical Reports Server (NTRS)

Fargher, Hugh E.; Smith, Richard A.

1992-01-01

Texas Instruments (TI) is currently contracted by the Air Force Wright Laboratory and the Defense Advanced Research Projects Agency (DARPA) to develop the next generation flexible semiconductor wafer fabrication system called Microelectronics Manufacturing Science & Technology (MMST). Several revolutionary concepts are being pioneered on MMST, including the following: new single-wafer rapid thermal processes, in-situ sensors, cluster equipment, and advanced Computer Integrated Manufacturing (CIM) software. The objective of the project is to develop a manufacturing system capable of achieving an order of magnitude improvement in almost all aspects of wafer fabrication. TI was awarded the contract in Oct., 1988, and will complete development with a fabrication facility demonstration in April, 1993. An important part of MMST is development of the CIM environment responsible for coordinating all parts of the system. The CIM architecture being developed is based on a distributed object oriented framework made of several cooperating subsystems. The software subsystems include the following: process control for dynamic control of factory processes; modular processing system for controlling the processing equipment; generic equipment model which provides an interface between processing equipment and the rest of the factory; specification system which maintains factory documents and product specifications; simulator for modelling the factory for analysis purposes; scheduler for scheduling work on the factory floor; and the planner for planning and monitoring of orders within the factory. This paper first outlines the division of responsibility between the planner, scheduler, and simulator subsystems. It then describes the approach to incremental planning and the way in which uncertainty is modelled within the plan representation. Finally, current status and initial results are described.

Printing Peptide arrays with a complementary metal oxide semiconductor chip.

PubMed

Loeffler, Felix F; Cheng, Yun-Chien; Muenster, Bastian; Striffler, Jakob; Liu, Fanny C; Ralf Bischoff, F; Doersam, Edgar; Breitling, Frank; Nesterov-Mueller, Alexander

2013-01-01

: In this chapter, we discuss the state-of-the-art peptide array technologies, comparing the spot technique, lithographical methods, and microelectronic chip-based approaches. Based on this analysis, we describe a novel peptide array synthesis method with a microelectronic chip printer. By means of a complementary metal oxide semiconductor chip, charged bioparticles can be patterned on its surface. The bioparticles serve as vehicles to transfer molecule monomers to specific synthesis spots. Our chip offers 16,384 pixel electrodes on its surface with a spot-to-spot pitch of 100 μm. By switching the voltage of each pixel between 0 and 100 V separately, it is possible to generate arbitrary particle patterns for combinatorial molecule synthesis. Afterwards, the patterned chip surface serves as a printing head to transfer the particle pattern from its surface to a synthesis substrate. We conducted a series of proof-of-principle experiments to synthesize high-density peptide arrays. Our solid phase synthesis approach is based on the 9-fluorenylmethoxycarbonyl protection group strategy. After melting the particles, embedded monomers diffuse to the surface and participate in the coupling reaction to the surface. The method demonstrated herein can be easily extended to the synthesis of more complicated artificial molecules by using bioparticles with artificial molecular building blocks. The possibility of synthesizing artificial peptides was also shown in an experiment in which we patterned biotin particles in a high-density array format. These results open the road to the development of peptide-based functional modules for diverse applications in biotechnology.

Microtechnology in Telecommunications for Spacecraft Cost and Mass Reduction

NASA Technical Reports Server (NTRS)

Herman, M. I.; Burkhart, S.; Crist, R.; Vacchione, J.; Hughes, R.; Kellogg, K.; Kermode, A.; Rascoe, D.; Hornbuckle, C.; Hoffmann, W.;

Science and Technological Innovation.

ERIC Educational Resources Information Center

Braun, Ernest

1979-01-01

This article is based on a presentation at the 1979 conference of the Education Group of The Institute of Physics which was held in Cambridge, England. It discusses the interaction between science and technological innovation using a historical approach: the development of microelectronics. (HM)

Information Retrieval Research and ESPRIT.

ERIC Educational Resources Information Center

Smeaton, Alan F.

1987-01-01

Describes the European Strategic Programme of Research and Development in Information Technology (ESPRIT), and its five programs: advanced microelectronics, software technology, advanced information processing, office systems, and computer integrated manufacturing. The emphasis on logic programming and ESPRIT as the European response to the…

Science Education Notes.

ERIC Educational Resources Information Center

School Science Review, 1983

1983-01-01

Discusses current topics in science education including increasing adult education through innovation in course planning/recruitment methods, a course in microelectronics/digital control, and need for increased human genetics topics in biology/health education. Also discusses changing role of biology teachers, preschool science, and teaching a…

Information Systems and Development in the Third World.

ERIC Educational Resources Information Center

Heitzman, James

1990-01-01

Discussion of the relationship between information and development in Third World countries highlights information systems development in four South Asian nations: India, Pakistan, Sri Lanka, and Bangladesh. The impact of microelectronics technology, development theories, multinational corporations, international information agencies, and…

CREME: The 2011 Revision of the Cosmic Ray Effects on Micro-Electronics Code

NASA Technical Reports Server (NTRS)

Adams, James H., Jr.; Barghouty, Abdulnasser F.; Reed, Robert A.; Sierawski, Brian D.; Watts, John W., Jr.

2012-01-01

We describe a tool suite, CREME, which combines existing capabilities of CREME96 and CREME86 with new radiation environment models and new Monte Carlo computational capabilities for single event effects and total ionizing dose.

Heavy Ion Testing at the Galactic Cosmic Ray Energy Peak

NASA Technical Reports Server (NTRS)

Pellish, Jonathan A.; Xapsos, M. A.; LaBel, K. A.; Marshall, P. W.; Heidel, D. F.; Rodbell, K. P.; Hakey, M. C.; Dodd, P. E.; Shaneyfelt, M. R.; Schwank, J. R.;

Microelectronic bioinstrumentation systems

NASA Technical Reports Server (NTRS)

Ko, W. H.

1976-01-01

Progress was made in the development of an RF cage, a single channel RF powered ECG telemetry system, and a three channel RF powered ECG, aortic blood pressure, and body temperature telemetry system. Encapsulation materials for chronic implantation of electronic circuits in the body were also evaluated.

Artwork Interactive Design System (AIDS) program description

NASA Technical Reports Server (NTRS)

Johnson, B. T.; Taylor, J. F.

1976-01-01

An artwork interactive design system is described which provides the microelectronic circuit designer/engineer a tool to perform circuit design, automatic layout modification, standard cell design, and artwork verification at a graphics computer terminal using a graphics tablet at the designer/computer interface.

On-Campus Projects: Inventing a Microchip.

ERIC Educational Resources Information Center

Basta, Nicholas

1985-01-01

In response to growth of microelectronics and changes in microchip design/manufacturing technology, universities are supporting class projects for students. Approximately 50 schools now conduct such programs which have resulted from earlier National Science Foundation sponsorship. Major advantages for the students include designing experience,…

Flight Experiments for Living With a Star Space Environment Testbed (LWS-SET): Relationship to Technology

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Barth, Janet L.; Brewer, Dana A.

2003-01-01

This viewgraph presentation provides information on flight validation experiments for technologies to determine solar effects. The experiments are intended to demonstrate tolerance to a solar variant environment. The technologies tested are microelectronics, photonics, materials, and sensors.

Radiation Effects and Hardening Techniques for Spacecraft Microelectronics

NASA Astrophysics Data System (ADS)

Gambles, J. W.; Maki, G. K.

2002-01-01

The natural radiation from the Van Allen belts, solar flares, and cosmic rays found outside of the protection of the earth's atmosphere can produce deleterious effects on microelectronics used in space systems. Historically civil space agencies and the commercial satellite industry have been able to utilize components produced in special radiation hardened fabrication process foundries that were developed during the 1970s and 1980s under sponsorship of the Departments of Defense (DoD) and Energy (DoE). In the post--cold war world the DoD and DoE push to advance the rad--hard processes has waned. Today the available rad--hard components lag two-plus technology node generations behind state- of-the-art commercial technologies. As a result space craft designers face a large performance gap when trying to utilize available rad--hard components. Compounding the performance gap problems, rad--hard components are becoming increasingly harder to get. Faced with the economic pitfalls associated with low demand versus the ever increasing investment required for integrated circuit manufacturing equipment most sources of rad--hard parts have simply exited this market in recent years, leaving only two domestic US suppliers of digital rad--hard components. This paper summarizes the radiation induced mechanisms that can cause digital microelectronics to fail in space, techniques that can be applied to mitigate these failure mechanisms, and ground based testing used to validate radiation hardness/tolerance. The radiation hardening techniques can be broken down into two classes, Hardness By Process (HBP) and Hardness By Design (HBD). Fortunately many HBD techniques can be applied to commercial fabrication processes providing space craft designer with radiation tolerant Application Specific Integrated Circuits (ASICs) that can bridge the performance gap between the special HBP foundries and the commercial state-of-the-art performance.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth

Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturingmore » of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.« less

All-inkjet-printed thin-film transistors: manufacturing process reliability by root cause analysis.

PubMed

Sowade, Enrico; Ramon, Eloi; Mitra, Kalyan Yoti; Martínez-Domingo, Carme; Pedró, Marta; Pallarès, Jofre; Loffredo, Fausta; Villani, Fulvia; Gomes, Henrique L; Terés, Lluís; Baumann, Reinhard R

2016-09-21

We report on the detailed electrical investigation of all-inkjet-printed thin-film transistor (TFT) arrays focusing on TFT failures and their origins. The TFT arrays were manufactured on flexible polymer substrates in ambient condition without the need for cleanroom environment or inert atmosphere and at a maximum temperature of 150 °C. Alternative manufacturing processes for electronic devices such as inkjet printing suffer from lower accuracy compared to traditional microelectronic manufacturing methods. Furthermore, usually printing methods do not allow the manufacturing of electronic devices with high yield (high number of functional devices). In general, the manufacturing yield is much lower compared to the established conventional manufacturing methods based on lithography. Thus, the focus of this contribution is set on a comprehensive analysis of defective TFTs printed by inkjet technology. Based on root cause analysis, we present the defects by developing failure categories and discuss the reasons for the defects. This procedure identifies failure origins and allows the optimization of the manufacturing resulting finally to a yield improvement.

Atomic characterization of Si nanoclusters embedded in SiO2 by atom probe tomography

PubMed Central

2011-01-01

Silicon nanoclusters are of prime interest for new generation of optoelectronic and microelectronics components. Physical properties (light emission, carrier storage...) of systems using such nanoclusters are strongly dependent on nanostructural characteristics. These characteristics (size, composition, distribution, and interface nature) are until now obtained using conventional high-resolution analytic methods, such as high-resolution transmission electron microscopy, EFTEM, or EELS. In this article, a complementary technique, the atom probe tomography, was used for studying a multilayer (ML) system containing silicon clusters. Such a technique and its analysis give information on the structure at the atomic level and allow obtaining complementary information with respect to other techniques. A description of the different steps for such analysis: sample preparation, atom probe analysis, and data treatment are detailed. An atomic scale description of the Si nanoclusters/SiO2 ML will be fully described. This system is composed of 3.8-nm-thick SiO layers and 4-nm-thick SiO2 layers annealed 1 h at 900°C. PMID:21711666

Challenges in Resolution for IC Failure Analysis

NASA Astrophysics Data System (ADS)

Martinez, Nick

1999-10-01

Resolution is becoming more and more of a challenge in the world of Failure Analysis in integrated circuits. This is a result of the ongoing size reduction in microelectronics. Determining the cause of a failure depends upon being able to find the responsible defect. The time it takes to locate a given defect is extremely important so that proper corrective actions can be taken. The limits of current microscopy tools are being pushed. With sub-micron feature sizes and even smaller killing defects, optical microscopes are becoming obsolete. With scanning electron microscopy (SEM), the resolution is high but the voltage involved can make these small defects transparent due to the large mean-free path of incident electrons. In this presentation, I will give an overview of the use of inspection methods in Failure Analysis and show example studies of my work as an Intern student at Texas Instruments. 1. Work at Texas Instruments, Stafford, TX, was supported by TI. 2. Work at Texas Tech University, was supported by NSF Grant DMR9705498.

Nuclear Reaction Models Responsible for Simulation of Neutron-induced Soft Errors in Microelectronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Watanabe, Y., E-mail: watanabe@aees.kyushu-u.ac.jp; Abe, S.

Terrestrial neutron-induced soft errors in MOSFETs from a 65 nm down to a 25 nm design rule are analyzed by means of multi-scale Monte Carlo simulation using the PHITS-HyENEXSS code system. Nuclear reaction models implemented in PHITS code are validated by comparisons with experimental data. From the analysis of calculated soft error rates, it is clarified that secondary He and H ions provide a major impact on soft errors with decreasing critical charge. It is also found that the high energy component from 10 MeV up to several hundreds of MeV in secondary cosmic-ray neutrons has the most significant sourcemore » of soft errors regardless of design rule.« less

Cohesive zone modelling of wafer bonding and fracture: effect of patterning and toughness variations

NASA Astrophysics Data System (ADS)

Kubair, D. V.; Spearing, S. M.

2006-03-01

Direct wafer bonding has increasingly become popular in the manufacture of microelectromechanical systems and semiconductor microelectronics components. The success of the bonding process is controlled by variables such as wafer flatness and surface preparation. In order to understand the effects of these variables, spontaneous planar crack propagation simulations were performed using the spectral scheme in conjunction with a cohesive zone model. The fracture-toughness on the bond interface is varied to simulate the effect of surface roughness (nanotopography) and patterning. Our analysis indicated that the energetics of crack propagation is sensitive to the local surface property variations. The patterned wafers are tougher (well bonded) than the unpatterned ones of the same average fracture-toughness.

Microfluidic automation using elastomeric valves and droplets: reducing reliance on external controllers.

PubMed

Kim, Sung-Jin; Lai, David; Park, Joong Yull; Yokokawa, Ryuji; Takayama, Shuichi

2012-10-08

This paper gives an overview of elastomeric valve- and droplet-based microfluidic systems designed to minimize the need of external pressure to control fluid flow. This Concept article introduces the working principle of representative components in these devices along with relevant biochemical applications. This is followed by providing a perspective on the roles of different microfluidic valves and systems through comparison of their similarities and differences with transistors (valves) and systems in microelectronics. Despite some physical limitation of drawing analogies from electronic circuits, automated microfluidic circuit design can gain insights from electronic circuits to minimize external control units, while implementing high-complexity and high-throughput analysis. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pavlikov, A. V., E-mail: pavlikov@physics.msu.ru; Latukhina, N. V.; Chepurnov, V. I.

Silicon-carbide (SiC) nanowire structures 40–50 nm in diameter are produced by the high-temperature carbonization of porous silicon and silicon nanowires. The SiC nanowires are studied by scanning electron microscopy, X-ray diffraction analysis, Raman spectroscopy, and infrared reflectance spectroscopy. The X-ray structural and Raman data suggest that the cubic 3C-SiC polytype is dominant in the samples under study. The shape of the infrared reflectance spectrum in the region of the reststrahlen band 800–900 cm{sup –1} is indicative of the presence of free charge carriers. The possibility of using SiC nanowires in microelectronic, photonic, and gas-sensing devices is discussed.

Applicability of microelectronic and mechanical systems (MEMS) for transportation infrastructure management.

DOT National Transportation Integrated Search

2008-08-11

It will be advantageous to have information on the state of health of infrastructure at all times in : order to carry out effective on-demand maintenance. With the tremendous advancement in technology, it is : possible to employ devices embedded in s...

Design and characterization of single photon avalanche diodes arrays

NASA Astrophysics Data System (ADS)

Neri, L.; Tudisco, S.; Lanzanò, L.; Musumeci, F.; Privitera, S.; Scordino, A.; Condorelli, G.; Fallica, G.; Mazzillo, M.; Sanfilippo, D.; Valvo, G.

2010-05-01

During the last years, in collaboration with ST-Microelectronics, we developed a new avalanche photo sensor, single photon avalanche diode (SPAD) see Ref.[S. Privitera, et al., Sensors 8 (2008) 4636 [1];S. Tudisco et al., IEEE Sensors Journal 8 (2008) 1324 [2

WORK SITE CLINICAL AND NEUROBEHAVIORAL ASSESSMENT OF SOLVENT EXPOSED MICROELECTRONICS WORKERS

EPA Science Inventory

A group of 25 workers currently (5), or formerly (20), involved in the manufacture of hybrid microcircuits underwent clinical evaluations at the request of a management-union committee concerned about chronic solvent exposures in a research and development laboratory. attery of n...

IEEE WMED 2016 Homepage

Science.gov Websites

characterization, design, and new device technologies. This workshop will consist of invited talks, contributed and Reliability Semiconductor package reliability, Design for Manufacturability, Stacked die packaging and Novel assembly processes Microelectronic Circuit Design New product design, high-speed and/or low

Panel I: Technology and Jobs.

ERIC Educational Resources Information Center

Appalachia, 1984

1984-01-01

Panel I features two case histories of state government, university, and private corporation cooperation to bring technology to the workplace (Microelectronics Center of North Carolina and Ben Franklin Partnership Program) and presentations about Burlington Industries and General Electric Company investments in technology to save jobs and boost…

Investigation of low glass transition temperature on COTS PEM's reliability for space applications

NASA Technical Reports Server (NTRS)

Sandor, M.; Agarwal, S.; Peters, D.; Cooper, M. S.

2003-01-01

Plastic Encapsulated Microelectronics (PEM) reliability is affected by many factors. Glass transition temperature (Tg) is one such factor. In this presentation issues relating to PEM reliability and the effect of low glass transition temperature epoxy mold compounds are presented.

Simple Chemical Vapor Deposition Experiment

ERIC Educational Resources Information Center

Pedersen, Henrik

2014-01-01

Chemical vapor deposition (CVD) is a process commonly used for the synthesis of thin films for several important technological applications, for example, microelectronics, hard coatings, and smart windows. Unfortunately, the complexity and prohibitive cost of CVD equipment makes it seldom available for undergraduate chemistry students. Here, a…

Solid state microdosimeter for radiation monitoring in spacecraft and avionics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roth, D.R.; McNulty, P.J.; Beauvais, W.J.

1994-12-01

An instrument is described which is designed to characterize the complex radiation environments inside spacecraft and airplanes in terms of the risk of SEEs in the present and planned microelectronic systems and in terms of the risk to flight crews and passengers.

High Technology and Job Loss.

ERIC Educational Resources Information Center

Rumberger, Russell

Job loss through technological advancement, particularly technologies based on microelectronics, is increasing for all economic sectors in a nation already hard challenged in world and domestic markets for goods and services. But assessing technology's employment impact remains difficult not only because of its direct and indirect effects and…

Innovations in microelectronics and solid state at North Carolina Agricultural and Technical State University

NASA Technical Reports Server (NTRS)

Williams, L., Jr.

1977-01-01

Research in the following areas is described: (1) Characterization and applications of metallic oxide devices; (2) Electronic properties and energy conversion in organic amorphous semiconductors; (3) Material growth and characterization directed toward improving 3-5 heterojunction solar cells.

Computational Physics for Space Flight Applications

NASA Technical Reports Server (NTRS)

Reed, Robert A.

2004-01-01

This paper presents viewgraphs on computational physics for space flight applications. The topics include: 1) Introduction to space radiation effects in microelectronics; 2) Using applied physics to help NASA meet mission objectives; 3) Example of applied computational physics; and 4) Future directions in applied computational physics.

Methodology of Education and R&D in Mechatronics.

ERIC Educational Resources Information Center

Yamazaki, K.; And Others

1985-01-01

Describes the concept and methodology of "mechatronics" (application of microelectronics to mechanism control) and research and development (R&D) projects through the activities initiated at the Precision Machining Laboratory of the Department of Production Systems Engineering of the new Toyohashi University of Technology. (JN)

Unusual Applications of Ultrasound in Industry

NASA Astrophysics Data System (ADS)

Keilman, George

The application of physical acoustics in industry has been accelerated by increased understanding of the physics of industrial processes, coupled with rapid advancements in transducers, microelectronics, data acquisition, signal processing, and related software fields. This has led to some unusual applications of ultrasound to improve industrial processes.

Fabrication of planarised conductively patterned diamond for bio-applications.

PubMed

Tong, Wei; Fox, Kate; Ganesan, Kumaravelu; Turnley, Ann M; Shimoni, Olga; Tran, Phong A; Lohrmann, Alexander; McFarlane, Thomas; Ahnood, Arman; Garrett, David J; Meffin, Hamish; O'Brien-Simpson, Neil M; Reynolds, Eric C; Prawer, Steven

2014-10-01

The development of smooth, featureless surfaces for biomedical microelectronics is a challenging feat. Other than the traditional electronic materials like silicon, few microelectronic circuits can be produced with conductive features without compromising the surface topography and/or biocompatibility. Diamond is fast becoming a highly sought after biomaterial for electrical stimulation, however, its inherent surface roughness introduced by the growth process limits its applications in electronic circuitry. In this study, we introduce a fabrication method for developing conductive features in an insulating diamond substrate whilst maintaining a planar topography. Using a combination of microwave plasma enhanced chemical vapour deposition, inductively coupled plasma reactive ion etching, secondary diamond growth and silicon wet-etching, we have produced a patterned substrate in which the surface roughness at the interface between the conducting and insulating diamond is approximately 3 nm. We also show that the patterned smooth topography is capable of neuronal cell adhesion and growth whilst restricting bacterial adhesion. Copyright © 2014 Elsevier B.V. All rights reserved.

A production parylene coating process for hybrid microcircuits

NASA Technical Reports Server (NTRS)

Kale, V. S.; Riley, T. J.

1977-01-01

The real impetus for developing a production parylene coating process for internal hybrid passivation came as a result of the possibility of loose conductive particles in hybrid microelectronic circuits, causing intermittent and sometimes permanent failures. Because of the excellent mechanical properties of parylene, it is capable of securing the loose particles in place and prevent such failures. The process of coating described consists of (1) vaporizing the initial charge, which is in the form of a dimer; (2) conversion of the dimer into a reactive monomer; and (3) deposition and subsequent polymerization of the monomer in the deposition chamber which forms a uniform parylene film over all the cold surfaces in contact. Experimental results are discussed in terms of wire bond reliability, resistor drift, high-temperature storage characteristics of parylene, and coating acceptance standards. It is concluded that internal cavities of microelectronic circuits can be successfully coated with parylene provided appropriate tooling is used to protect external leads from the parylene monomer.

Applying CLIPS to control of molecular beam epitaxy processing

NASA Technical Reports Server (NTRS)

Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

1990-01-01

A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

FBIS report. Science and technology: Europe/International, March 29, 1996

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

1996-03-29

;Partial Contents: Advanced Materials (EU Project to Improve Production in Metal Matrix Compounds Noted, Germany: Extremely Hard Carbon Coating Development, Italy: Director of CNR Metallic Materials Institute Interviewed); Aerospace (ESA Considers Delays, Reductions as Result of Budget Cuts, Italy: Space Agency`s Director on Restructuring, Future Plans); Automotive, Transportation (EU: Clean Diesel Engine Technology Research Reviewed); Biotechnology (Germany`s Problems, Successes in Biotechnology Discussed); Computers (EU Europort Parallel Computing Project Concluded, Italy: PQE 2000 Project on Massively Parallel Systems Viewed); Defense R&D (France: Future Tasks of `Brevel` Military Intelligence Drone Noted); Energy, Environment (German Scientist Tests Elimination of Phosphates); Advanced Manufacturing (France:more » Advanced Rapid Prototyping System Presented); Lasers, Sensors, Optics (France: Strategy of Cilas Laser Company Detailed); Microelectronics (France: Simulation Company to Develop Microelectronic Manufacturing Application); Nuclear R&D (France: Megajoule Laser Plan, Cooperation with Livermore Lab Noted); S&T Policy (EU Efforts to Aid Small Companies` Research Viewed); Telecommunications (France Telecom`s Way to Internet).« less

Space Environment Effects: Model for Emission of Solar Protons (ESP): Cumulative and Worst Case Event Fluences

NASA Technical Reports Server (NTRS)

Xapsos, M. A.; Barth, J. L.; Stassinopoulos, E. G.; Burke, E. A.; Gee, G. B.

1999-01-01

The effects that solar proton events have on microelectronics and solar arrays are important considerations for spacecraft in geostationary and polar orbits and for interplanetary missions. Designers of spacecraft and mission planners are required to assess the performance of microelectronic systems under a variety of conditions. A number of useful approaches exist for predicting information about solar proton event fluences and, to a lesser extent, peak fluxes. This includes the cumulative fluence over the course of a mission, the fluence of a worst-case event during a mission, the frequency distribution of event fluences, and the frequency distribution of large peak fluxes. Naval Research Laboratory (NRL) and NASA Goddard Space Flight Center, under the sponsorship of NASA's Space Environments and Effects (SEE) Program, have developed a new model for predicting cumulative solar proton fluences and worst-case solar proton events as functions of mission duration and user confidence level. This model is called the Emission of Solar Protons (ESP) model.

Space Environment Effects: Model for Emission of Solar Protons (ESP)--Cumulative and Worst-Case Event Fluences

NASA Technical Reports Server (NTRS)

Xapsos, M. A.; Barth, J. L.; Stassinopoulos, E. G.; Burke, Edward A.; Gee, G. B.

1999-01-01

The effects that solar proton events have on microelectronics and solar arrays are important considerations for spacecraft in geostationary and polar orbits and for interplanetary missions. Designers of spacecraft and mission planners are required to assess the performance of microelectronic systems under a variety of conditions. A number of useful approaches exist for predicting information about solar proton event fluences and, to a lesser extent, peak fluxes. This includes the cumulative fluence over the course of a mission, the fluence of a worst-case event during a mission, the frequency distribution of event fluences, and the frequency distribution of large peak fluxes. Naval Research Laboratory (NRL) and NASA Goddard Space Flight Center, under the sponsorship of NASA's Space Environments and Effects (SEE) Program, have developed a new model for predicting cumulative solar proton fluences and worst-case solar proton events as functions of mission duration and user confidence level. This model is called the Emission of Solar Protons (ESP) model.

Hardware Acceleration of Adaptive Neural Algorithms.

DOE Office of Scientific and Technical Information (OSTI.GOV)

James, Conrad D.

As tradit ional numerical computing has faced challenges, researchers have turned towards alternative computing approaches to reduce power - per - computation metrics and improve algorithm performance. Here, we describe an approach towards non - conventional computing that strengthens the connection between machine learning and neuroscience concepts. The Hardware Acceleration of Adaptive Neural Algorithms (HAANA) project ha s develop ed neural machine learning algorithms and hardware for applications in image processing and cybersecurity. While machine learning methods are effective at extracting relevant features from many types of data, the effectiveness of these algorithms degrades when subjected to real - worldmore » conditions. Our team has generated novel neural - inspired approa ches to improve the resiliency and adaptability of machine learning algorithms. In addition, we have also designed and fabricated hardware architectures and microelectronic devices specifically tuned towards the training and inference operations of neural - inspired algorithms. Finally, our multi - scale simulation framework allows us to assess the impact of microelectronic device properties on algorithm performance.« less

Thermal shock testing for assuring reliability of glass-sealed microelectronic packages

NASA Technical Reports Server (NTRS)

Thomas, Walter B., III; Lewis, Michael D.

1991-01-01

Tests were performed to determine if thermal shocking is destructive to glass-to-metal seal microelectronic packages and if thermal shock step stressing can compare package reliabilities. Thermal shocking was shown to be not destructive to highly reliable glass seals. Pin-pull tests used to compare the interfacial pin glass strengths showed no differences between thermal shocked and not-thermal shocked headers. A 'critical stress resistance temperature' was not exhibited by the 14 pin Dual In-line Package (DIP) headers evaluated. Headers manufactured in cryogenic nitrogen based and exothermically generated atmospheres showed differences in as-received leak rates, residual oxide depths and pin glass interfacial strengths; these were caused by the different manufacturing methods, in particular, by the chemically etched pins used by one manufacturer. Both header types passed thermal shock tests to temperature differentials of 646 C. The sensitivity of helium leak rate measurements was improved up to 70 percent by baking headers for two hours at 200 C after thermal shocking.

The microstructure matters: breaking down the barriers with single crystalline silicon as negative electrode in Li-ion batteries

PubMed Central

Sternad, M.; Forster, M.; Wilkening, M.

2016-01-01

Silicon-based microelectronics forms a major foundation of our modern society. Small lithium-ion batteries act as the key enablers of its success and have revolutionised portable electronics used in our all everyday’s life. While large-scale LIBs are expected to help establish electric vehicles, on the other end of device size chip-integrated Si-based μ-batteries may revolutionise microelectronics once more. In general, Si is regarded as one of the white hopes since it offers energy densities being ten times higher than conventional anode materials. The use of monocrystalline, wafer-grade Si, however, requires several hurdles to be overcome since it its volume largely expands during lithiation. Here, we will show how 3D patterned Si wafers, prepared by the sophisticated techniques from semiconductor industry, are to be electrochemically activated to overcome these limitations and to leverage their full potential being reflected in stable charge capacities (>1000 mAhg–1) and high Coulomb efficiencies (98.8%). PMID:27531589

Millimeter-wave MMIC technology for smart weapons

NASA Astrophysics Data System (ADS)

Seashore, Charles R.

1994-12-01

Millimeter wave MMIC component technology has made dramatic progress over the last ten years largely due to funding stimulation received under the ARPA Tri-Service MIMIC program. In several smart weapon systems, MMIC components are now specified as the baseline approach for millimeter wave radar transceiver hardware. Availability of this new frontier in microelectronics has also enabled realization of sensor fusion for multispectral capability to defeat many forms of known countermeasures. The current frequency range for these MMIC-based components is approximately 30 to 100 GHz. In several cases, it has been demonstrated that the MMIC component performance has exceeded that available from hybrid microstrip circuits using selected discrete devices. However, challenges still remain in chip producibility enhancement and cost reduction since many of the essential device structure candidates are themselves emerging technologies with a limited wafer fabrication history and accumulated test databases. It is concluded that smart weapons of the future will rely heavily on advanced microelectronics to satisfy performance requirements as well as meeting stringent packaging and power source constraints.

Recent patents on Cu/low-k dielectrics interconnects in integrated circuits.

PubMed

Jiang, Qing; Zhu, Yong F; Zhao, Ming

2007-01-01

In past decades, the development of microelectronics has moved along with constant speed of scaling to maximize transistor density as driven by the need for electrical and functional performance. For further development, the propagation velocity of electromagnetic waves becomes increasingly important due to their unyielding constraints on interconnect delay. To minimize it, it was forced to the introduction of the Cu/low-k dielectric interconnects to very large scale integrated circuits (VLSI) where k denotes the dielectric constant. In addition, reliable barrier structures, which are the thinnest part among the device parts to maximize space availability for the actual Cu IWs, are required to prevent penetration of different materials. In light of the above statements, this review will focus recent patents and some studies on Cu interconnects including Cu interconnect wires, low-k dielectrics and related barrier materials as well manufacturing techniques in VLSI, which are one of the most essential concerns in microelectronic industry and decides the further development of VLSI. In addition, possible future development in this field is considered.

Piezoelectric-nanowire-enabled power source for driving wireless microelectronics.

PubMed

Xu, Sheng; Hansen, Benjamin J; Wang, Zhong Lin

2010-10-19

Harvesting energy from irregular/random mechanical actions in variable and uncontrollable environments is an effective approach for powering wireless mobile electronics to meet a wide range of applications in our daily life. Piezoelectric nanowires are robust and can be stimulated by tiny physical motions/disturbances over a range of frequencies. Here, we demonstrate the first chemical epitaxial growth of PbZr(x)Ti(1-x)O(3) (PZT) nanowire arrays at 230 °C and their application as high-output energy converters. The nanogenerators fabricated using a single array of PZT nanowires produce a peak output voltage of ~0.7 V, current density of 4 μA cm(-2) and an average power density of 2.8 mW cm(-3). The alternating current output of the nanogenerator is rectified, and the harvested energy is stored and later used to light up a commercial laser diode. This work demonstrates the feasibility of using nanogenerators for powering mobile and even personal microelectronics.

Possibilities for mixed mode chip manufacturing in EUROPRACTICE

NASA Astrophysics Data System (ADS)

Das, C.

1997-02-01

EUROPRACTICE is an EC initiative under the ESPRIT programme which aims to stimulate the wider exploitation of state-of-the-art microelectronics technologies by European industry and to enhance European industrial competitiveness in the global market-place. Through EUROPRACTICE, the EC has created a range of Basic Services that offer users a cost-effective and flexible means of accessing three main microelectronics-based technologies: Application Specific Integrated Circuit (ASICs), Multi-Chip Modules (MCMs) and Microsystems. EUROPRACTICE Basic Services reduce the cost and risk for companies wishing to begin using these technologies. EUROPRACTICE offers a fully supported, low cost route for companies to design and fabricate ASICs for their individual applications. Low cost is achieved by consolidating designs from many users onto a single semiconductor wafer (MPW: Multi Project Wafer). The EUROPRACTICE IC Manufacturing Service (ICMS) offers a broad range of fabrication technologies including CMOS, BiCMOS and GaAs. The Service extends from enabling users to produce prototype ASICs for testing and evaluation, through to low-volume production runs.

Advanced optical modeling of TiN metal hard mask for scatterometric critical dimension metrology

NASA Astrophysics Data System (ADS)

Ebersbach, Peter; Urbanowicz, Adam M.; Likhachev, Dmitriy; Hartig, Carsten

2017-03-01

The majority of scatterometric production control models assume constant optical properties of the materials and only dimensional parameters are allowed to vary. However, this assumption, especially in case of thin-metal films, negatively impacts model precision and accuracy. In this work we focus on optical modeling of the TiN metal hardmask for scatterometry applications. Since the dielectric function of TiN exhibits thickness dependence, we had to take this fact into account. Moreover, presence of the highly absorbing films influences extracted thicknesses of dielectric layers underneath the metal films. The later phenomenon is often not reflected by goodness of fit. We show that accurate optical modeling of metal is essential to achieve desired scatterometric model quality for automatic process control in microelectronic production. Presented modeling methodology can be applied to other TiN applications such as diffusion barriers and metal gates as well as for other metals used in microelectronic manufacturing for all technology nodes.

Technology Development Activities for the Space Environment and its Effects on Spacecraft

NASA Technical Reports Server (NTRS)

Kauffman, Billy; Hardage, Donna; Minor, Jody; Barth, Janet; LaBel, Ken

2003-01-01

Reducing size and weight of spacecraft, along with demanding increased performance capabilities, introduces many uncertainties in the engineering design community on how emerging microelectronics will perform in space. The engineering design community is forever behind on obtaining and developing new tools and guidelines to mitigate the harmful effects of the space environment. Adding to this complexity is the push to use Commercial-off-the-shelf (COTS) and shrinking microelectronics behind less shielding and the potential usage of unproven technologies such as large solar sail structures and nuclear electric propulsion. In order to drive down these uncertainties, various programs are working together to avoid duplication, save what resources are available in this technical area and possess a focused agenda to insert these new developments into future mission designs. This paper will describe the relationship between the Living With a Star (LWS): Space Environment Testbeds (SET) Project and NASA's Space Environments and Effects (SEE) Program and their technology development activities funded as a result from the recent SEE Program's NASA Research Announcement.

An Electronic Patch for wearable health monitoring by reflectance pulse oximetry.

PubMed

Haahr, Rasmus G; Duun, Sune B; Toft, Mette H; Belhage, Bo; Larsen, Jan; Birkelund, Karen; Thomsen, Erik V

2012-02-01

We report the development of an Electronic Patch for wearable health monitoring. The Electronic Patch is a new health monitoring system incorporating biomedical sensors, microelectronics, radio frequency (RF) communication, and a battery embedded in a 3-dimensional hydrocolloid polymer. In this paper the Electronic Patch is demonstrated with a new optical biomedical sensor for reflectance pulse oximetry so that the Electronic Patch in this case can measure the pulse and the oxygen saturation. The reflectance pulse oximetry solution is based on a recently developed annular backside silicon photodiode to enable low power consumption by the light emitting components. The Electronic Patch has a disposable part of soft adhesive hydrocolloid polymer and a reusable part of hard polylaurinlactam. The disposable part contains the battery. The reusable part contains the reflectance pulse oximetry sensor and microelectronics. The reusable part is 'clicked' into the disposable part when the patch is prepared for use. The patch has a size of 88 mm by 60 mm and a thickness of 5 mm.

All-gas-phase synthesis of UiO-66 through modulated atomic layer deposition

NASA Astrophysics Data System (ADS)

Lausund, Kristian Blindheim; Nilsen, Ola

2016-11-01

Thin films of stable metal-organic frameworks (MOFs) such as UiO-66 have enormous application potential, for instance in microelectronics. However, all-gas-phase deposition techniques are currently not available for such MOFs. We here report on thin-film deposition of the thermally and chemically stable UiO-66 in an all-gas-phase process by the aid of atomic layer deposition (ALD). Sequential reactions of ZrCl4 and 1,4-benzenedicarboxylic acid produce amorphous organic-inorganic hybrid films that are subsequently crystallized to the UiO-66 structure by treatment in acetic acid vapour. We also introduce a new approach to control the stoichiometry between metal clusters and organic linkers by modulation of the ALD growth with additional acetic acid pulses. An all-gas-phase synthesis technique for UiO-66 could enable implementations in microelectronics that are not compatible with solvothermal synthesis. Since this technique is ALD-based, it could also give enhanced thickness control and the possibility to coat irregular substrates with high aspect ratios.

Retrospective cohort study of a microelectronics and business machine facility.

PubMed

Silver, Sharon R; Pinkerton, Lynne E; Fleming, Donald A; Jones, James H; Allee, Steven; Luo, Lian; Bertke, Stephen J

2014-04-01

We examined health outcomes among 34,494 workers employed at a microelectronics and business machine facility 1969-2001. Standardized mortality ratio (SMR) and standardized incidence ratios were used to evaluate health outcomes in the cohort and Cox regression modeling to evaluate relations between scores for occupational exposures and outcomes of a priori interest. Just over 17% of the cohort (5,966 people) had died through 2009. All cause, all cancer, and many cause-specific SMRs showed statistically significant deficits. In hourly males, SMRs were significantly elevated for non-Hodgkin's lymphoma and rectal cancer. Salaried males had excess testicular cancer incidence. Pleural cancer and mesothelioma excesses were observed in workers hired before 1969, but no available records substantiate use of asbestos in manufacturing processes. A positive, statistically significant relation was observed between exposure scores for tetrachloroethylene and nervous system diseases. Few significant exposure-outcome relations were observed, but risks from occupational exposures cannot be ruled out due to data limitations and the relative youth of the cohort. © 2013 Wiley Periodicals, Inc.

Trends in Dielectric Etch for Microelectronics Processing

NASA Astrophysics Data System (ADS)

Hudson, Eric A.

2003-10-01

Dielectric etch technology faces many challenges to meet the requirements for leading-edge microelectronics processing. The move to sub 100-nm device design rules increases the aspect ratios of certain features, imposes tighter restrictions on etched features' critical dimensions, and increases the density of closely packed arrays of features. Changes in photolithography are driving transitions to new photoresist materials and novel multilayer resist methods. The increasing use of copper metallization and low-k interlayer dielectric materials has introduced dual-damascene integration methods, with specialized dielectric etch applications. A common need is the selective removal of multiple layers which have very different compositions, while maintaining close control of the etched features' profiles. To increase productivity, there is a growing trend toward in-situ processing, which allows several films to be successively etched during a single pass through the process module. Dielectric etch systems mainly utilize capacitively coupled etch reactors, operating with medium-density plasmas and low gas residence time. Commercial technology development increasingly relies upon plasma diagnostics and modeling to reduce development cycle time and maximize performance.

Agricultural wastes as a resource of raw materials for developing low-dielectric glass-ceramics

PubMed Central

Danewalia, Satwinder Singh; Sharma, Gaurav; Thakur, Samita; Singh, K.

2016-01-01

Agricultural waste ashes are used as resource materials to synthesize new glass and glass-ceramics. The as-prepared materials are characterized using various techniques for their structural and dielectric properties to check their suitability in microelectronic applications. Sugarcane leaves ash exhibits higher content of alkali metal oxides than rice husk ash, which reduces the melting point of the components due to eutectic reactions. The addition of sugarcane leaves ash in rice husk ash promotes the glass formation. Additionally, it prevents the cristobalite phase formation. These materials are inherently porous, which is responsible for low dielectric permittivity i.e. 9 to 40. The presence of less ordered augite phase enhances the dielectric permittivity as compared to cristobalite and tridymite phases. The present glass-ceramics exhibit lower losses than similar materials synthesized using conventional minerals. The dielectric permittivity is independent to a wide range of temperature and frequency. The glass-ceramics developed with adequately devitrified phases can be used in microelectronic devices and other dielectric applications. PMID:27087123

Direct on-chip DNA synthesis using electrochemically modified gold electrodes as solid support

NASA Astrophysics Data System (ADS)

Levrie, Karen; Jans, Karolien; Schepers, Guy; Vos, Rita; Van Dorpe, Pol; Lagae, Liesbet; Van Hoof, Chris; Van Aerschot, Arthur; Stakenborg, Tim

2018-04-01

DNA microarrays have propelled important advancements in the field of genomic research by enabling the monitoring of thousands of genes in parallel. The throughput can be increased even further by scaling down the microarray feature size. In this respect, microelectronics-based DNA arrays are promising as they can leverage semiconductor processing techniques with lithographic resolutions. We propose a method that enables the use of metal electrodes for de novo DNA synthesis without the need for an insulating support. By electrochemically functionalizing gold electrodes, these electrodes can act as solid support for phosphoramidite-based synthesis. The proposed method relies on the electrochemical reduction of diazonium salts, enabling site-specific incorporation of hydroxyl groups onto the metal electrodes. An automated DNA synthesizer was used to couple phosphoramidite moieties directly onto the OH-modified electrodes to obtain the desired oligonucleotide sequence. Characterization was done via cyclic voltammetry and fluorescence microscopy. Our results present a valuable proof-of-concept for the integration of solid-phase DNA synthesis with microelectronics.

[Application of microelectronics CAD tools to synthetic biology].

PubMed

Madec, Morgan; Haiech, Jacques; Rosati, Élise; Rezgui, Abir; Gendrault, Yves; Lallement, Christophe

2017-02-01

Synthetic biology is an emerging science that aims to create new biological functions that do not exist in nature, based on the knowledge acquired in life science over the last century. Since the beginning of this century, several projects in synthetic biology have emerged. The complexity of the developed artificial bio-functions is relatively low so that empirical design methods could be used for the design process. Nevertheless, with the increasing complexity of biological circuits, this is no longer the case and a large number of computer aided design softwares have been developed in the past few years. These tools include languages for the behavioral description and the mathematical modelling of biological systems, simulators at different levels of abstraction, libraries of biological devices and circuit design automation algorithms. All of these tools already exist in other fields of engineering sciences, particularly in microelectronics. This is the approach that is put forward in this paper. © 2017 médecine/sciences – Inserm.

Emerging memories

NASA Astrophysics Data System (ADS)

Baldi, Livio; Bez, Roberto; Sandhu, Gurtej

2014-12-01

Memory is a key component of any data processing system. Following the classical Turing machine approach, memories hold both the data to be processed and the rules for processing them. In the history of microelectronics, the distinction has been rather between working memory, which is exemplified by DRAM, and storage memory, exemplified by NAND. These two types of memory devices now represent 90% of all memory market and 25% of the total semiconductor market, and have been the technology drivers in the last decades. Even if radically different in characteristics, they are however based on the same storage mechanism: charge storage, and this mechanism seems to be near to reaching its physical limits. The search for new alternative memory approaches, based on more scalable mechanisms, has therefore gained new momentum. The status of incumbent memory technologies and their scaling limitations will be discussed. Emerging memory technologies will be analyzed, starting from the ones that are already present for niche applications, and which are getting new attention, thanks to recent technology breakthroughs. Maturity level, physical limitations and potential for scaling will be compared to existing memories. At the end the possible future composition of memory systems will be discussed.

Research progress of Ge on insulator grown by rapid melting growth

NASA Astrophysics Data System (ADS)

Liu, Zhi; Wen, Juanjuan; Li, Chuanbo; Xue, Chunlai; Cheng, Buwen

2018-06-01

Ge is an attractive material for Si-based microelectronics and photonics due to its high carries mobility, pseudo direct bandgap structure, and the compatibility with complementary metal oxide semiconductor (CMOS) processes. Based on Ge, Ge on insulator (GOI) not only has these advantages, but also provides strong electronic and optical confinement. Recently, a novel technique to fabricate GOI by rapid melting growth (RMG) has been described. Here, we introduce the RMG technique and review recent efforts and progress in RMG. Firstly, we will introduce process steps of RMG. We will then review the researches which focus on characterizations of the GOI including growth dimension, growth mechanism, growth orientation, concentration distribution, and strain status. Finally, GOI based applications including high performance metal–oxide–semiconductor field effect transistors (MOSFETs) and photodetectors will be discussed. These results show that RMG is a promising technique for growth of high quality GOIs with different characterizations. The GOI grown by RMG is a potential material for the next-generation of integrated circuits and optoelectronic circuits. Project supported in part by the National Key Research and Development Program of China (No. 2017YFA0206404) and the National Natural Science Foundation of China (Nos. 61435013, 61534005, 61534004, 61604146).

MIT Lincoln Laboratory Annual Report 2013

DTIC Science & Technology

2013-01-01

A small-scale demonstration FPGA is currently being fabricated in the Microelectronics Laboratory, and a larger array is being designed for fabri ...year, the first Friday of February is a day to call attention to heart disease . Efforts of the six-member team, MIT Lincoln Laboratory for the Heart

Field Emission Cathode and Vacuum Microelectronic Microwave Amplifier Development

DTIC Science & Technology

1993-03-31

the crushed material with additional yttria-stabilized zirconia powder to yield a pressable material of appropriate overall composition. This mixture...sensitivity of the system to oxygen content, a dedicated effort is planned to study the effect of residual oxygen in the zirconia powder on composite growth

Superconducting flux flow digital circuits

DOEpatents

Hietala, Vincent M.; Martens, Jon S.; Zipperian, Thomas E.

1995-01-01

A NOR/inverter logic gate circuit and a flip flop circuit implemented with superconducting flux flow transistors (SFFTs). Both circuits comprise two SFFTs with feedback lines. They have extremely low power dissipation, very high switching speeds, and the ability to interface between Josephson junction superconductor circuits and conventional microelectronics.

Work and Programmable Automation.

ERIC Educational Resources Information Center

DeVore, Paul W.

A new industrial era based on electronics and the microprocessor has arrived, an era that is being called intelligent automation. Intelligent automation, in the form of robots, replaces workers, and the new products, using microelectronic devices, require significantly less labor to produce than the goods they replace. The microprocessor thus…

Uncooled Terahertz real-time imaging 2D arrays developed at LETI: present status and perspectives

NASA Astrophysics Data System (ADS)

Simoens, François; Meilhan, Jérôme; Dussopt, Laurent; Nicolas, Jean-Alain; Monnier, Nicolas; Sicard, Gilles; Siligaris, Alexandre; Hiberty, Bruno

2017-05-01

As for other imaging sensor markets, whatever is the technology, the commercial spread of terahertz (THz) cameras has to fulfil simultaneously the criteria of high sensitivity and low cost and SWAP (size, weight and power). Monolithic silicon-based 2D sensors integrated in uncooled THz real-time cameras are good candidates to meet these requirements. Over the past decade, LETI has been studying and developing such arrays with two complimentary technological approaches, i.e. antenna-coupled silicon bolometers and CMOS Field Effect Transistors (FET), both being compatible to standard silicon microelectronics processes. LETI has leveraged its know-how in thermal infrared bolometer sensors in developing a proprietary architecture for THz sensing. High technological maturity has been achieved as illustrated by the demonstration of fast scanning of large field of view and the recent birth of a commercial camera. In the FET-based THz field, recent works have been focused on innovative CMOS read-out-integrated circuit designs. The studied architectures take advantage of the large pixel pitch to enhance the flexibility and the sensitivity: an embedded in-pixel configurable signal processing chain dramatically reduces the noise. Video sequences at 100 frames per second using our 31x31 pixels 2D Focal Plane Arrays (FPA) have been achieved. The authors describe the present status of these developments and perspectives of performance evolutions are discussed. Several experimental imaging tests are also presented in order to illustrate the capabilities of these arrays to address industrial applications such as non-destructive testing (NDT), security or quality control of food.

How Many Peripheral Solder Joints in a Surface Mounted Design Experience Inelastic Strains?

NASA Astrophysics Data System (ADS)

Suhir, E.; Yi, S.; Ghaffarian, R.

2017-03-01

It has been established that it is the peripheral solder joints that are the most vulnerable in the ball-grid-array (BGA) and column-grid-array (CGA) designs and most often fail. As far as the long-term reliability of a soldered microelectronics assembly as a whole is concerned, it makes a difference, if just one or more peripheral joints experience inelastic strains. It is clear that the low cycle fatigue lifetime of the solder system is inversely proportional to the number of joints that simultaneously experience inelastic strains. A simple and physically meaningful analytical expression (formula) is obtained for the prediction, at the design stage, of the number of such joints, if any, for the given effective thermal expansion (contraction) mismatch of the package and PCB; materials and geometrical characteristics of the package/PCB assembly; package size; and, of course, the level of the yield stress in the solder material. The suggested formula can be used to determine if the inelastic strains in the solder material could be avoided by the proper selection of the above characteristics and, if not, how many peripheral joints are expected to simultaneously experience inelastic strains. The general concept is illustrated by a numerical example carried out for a typical BGA package. The suggested analytical model (formula) is applicable to any soldered microelectronics assembly. The roles of other important factors, such as, e.g., solder material anisotropy, grain size, and their random orientation within a joint, are viewed in this analysis as less important factors than the level of the interfacial stress. The roles of these factors will be accounted for in future work and considered, in addition to the location of the joint, in a more complicated, more sophisticated, and more comprehensive reliability/fatigue model.

The Development of Spectroscopic Techniques to Study Defects in Thin Film Silicon-Dioxide

NASA Astrophysics Data System (ADS)

Zvanut, Mary Ellen

This dissertation research concerns the study of defects in thin film sputtered SiO_2 which is used as an optical coating material. The capacitance-voltage and current-voltage techniques typically used in microelectronics investigations were used to examine the concentration, location, and kinetics of charge in an aluminum-sputtered oxide-native oxide-silicon capacitor. The response of the capacitor to low field bias stress reveals a hysteretic trapping behavior similar to that observed in microelectronic grade oxide films. In an effort to understand this phenomenon, a band-to-trap tunneling model was developed based on the assumption that the defect involved exhibits a delta function spatial distribution and an extended energy distribution. The central feature of this model, defect relaxation, provides a physical explanation for the hysteretic trapping behavior. Analysis yields that the trap is located spatially within 2 nm of the Si/SiO _2 interface and energetically less than 5 eV from the SiO_2 conduction band edge. The relaxation energy associated with the capture of an electron at the trap is 0.1-2.2 eV. Correlation of the electrical measurements executed for this investigation with electron paramagnetic resonance (EPR) data obtained by Dr. P. Caplan provides structural information about the defect involved with the hysteretic trapping phenomenon. EPR results obtained before and after subjecting an oxide-silicon structure to corona discharge suggest that the trapping center is an E^ ' defect. The technique of band-to-trap tunneling spectroscopy combined with the EPR experiments provides the first reported trap depth associated with the capture of a hole at an E^' center located near the silicon surface of an oxide/silicon system.

Nanofluid two-phase flow and thermal physics: a new research frontier of nanotechnology and its challenges.

PubMed

Cheng, Lixin; Bandarra Filho, Enio P; Thome, John R

2008-07-01

Nanofluids are a new class of fluids engineered by dispersing nanometer-size solid particles in base fluids. As a new research frontier, nanofluid two-phase flow and thermal physics have the potential to improve heat transfer and energy efficiency in thermal management systems for many applications, such as microelectronics, power electronics, transportation, nuclear engineering, heat pipes, refrigeration, air-conditioning and heat pump systems. So far, the study of nanofluid two-phase flow and thermal physics is still in its infancy. This field of research provides many opportunities to study new frontiers but also poses great challenges. To summarize the current status of research in this newly developing interdisciplinary field and to identify the future research needs as well, this paper focuses on presenting a comprehensive review of nucleate pool boiling, flow boiling, critical heat flux, condensation and two-phase flow of nanofluids. Even for the limited studies done so far, there are some controversies. Conclusions and contradictions on the available nanofluid studies on physical properties, two-phase flow, heat transfer and critical heat flux (CHF) are presented. Based on a comprehensive analysis, it has been realized that the physical properties of nanofluids such as surface tension, liquid thermal conductivity, viscosity and density have significant effects on the nanofluid two-phase flow and heat transfer characteristics but the lack of the accurate knowledge of these physical properties has greatly limited the study in this interdisciplinary field. Therefore, effort should be made to contribute to the physical property database of nanofluids as a first priority. Secondly, in particular, research on nanofluid two-phase flow and heat transfer in microchannels should be emphasized in the future.

A high-throughput, multi-channel photon-counting detector with picosecond timing

NASA Astrophysics Data System (ADS)

Lapington, J. S.; Fraser, G. W.; Miller, G. M.; Ashton, T. J. R.; Jarron, P.; Despeisse, M.; Powolny, F.; Howorth, J.; Milnes, J.

2009-06-01

High-throughput photon counting with high time resolution is a niche application area where vacuum tubes can still outperform solid-state devices. Applications in the life sciences utilizing time-resolved spectroscopies, particularly in the growing field of proteomics, will benefit greatly from performance enhancements in event timing and detector throughput. The HiContent project is a collaboration between the University of Leicester Space Research Centre, the Microelectronics Group at CERN, Photek Ltd., and end-users at the Gray Cancer Institute and the University of Manchester. The goal is to develop a detector system specifically designed for optical proteomics, capable of high content (multi-parametric) analysis at high throughput. The HiContent detector system is being developed to exploit this niche market. It combines multi-channel, high time resolution photon counting in a single miniaturized detector system with integrated electronics. The combination of enabling technologies; small pore microchannel plate devices with very high time resolution, and high-speed multi-channel ASIC electronics developed for the LHC at CERN, provides the necessary building blocks for a high-throughput detector system with up to 1024 parallel counting channels and 20 ps time resolution. We describe the detector and electronic design, discuss the current status of the HiContent project and present the results from a 64-channel prototype system. In the absence of an operational detector, we present measurements of the electronics performance using a pulse generator to simulate detector events. Event timing results from the NINO high-speed front-end ASIC captured using a fast digital oscilloscope are compared with data taken with the proposed electronic configuration which uses the multi-channel HPTDC timing ASIC.

Materials Coating Techniques

DTIC Science & Technology

1980-03-01

applications from decorative to utilitarian over significant segments of the engineering, chemical, nuclear , microelectronics, and related Industries. PVD...Thermal-control coating. Boron 2430 Cermet component, nuclear shielding and controlrod material; Carbide wear- and temperature-resistant. Calcium...Zirconium Oxide (Hafnia-Pree � Thermal-barrier coatings for nuclear applications. Lime Stabi!Aed) Zirconium 2563 Resistant to high-temperature

NASA Electronic Parts and Packaging (NEPP) Program - Radiation Activities

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Sampson, Michael J.

2008-01-01

The NEPP mission is to provide guidance to NASA for the selection and application of microelectronics technologies, to improve understanding of the risks related to the use of these technologies in the space environment and to ensure that appropriate research is performed to meet NASA mission assurance needs.

Multifunctional Materials: Transparent Reactive Armor Utilizing Single-Walled Carbon Nanotube Frameworks

DTIC Science & Technology

2010-03-03

with white- light femtosecond pulses. Applied Surface Science 253, 6305-6309 (2007). 22. Komarov, P. L., Burzo, M. G., Kaytaz, G. & Raad , P. E...Microelectronics Journal 34, 1115-1118 (2003). 23. Kulish, V. V., Lage, J. L., Komarov, P. L. & Raad , P. E. A fractional-diffusion theory for

Advances in Automation Prompt Concern over Increased U.S. Unemployment.

ERIC Educational Resources Information Center

General Accounting Office, Washington, DC.

The General Accounting Office recently studied automation, especially the advent of microelectronics, and its impact on unemployment. The study included identifying available information sources and obtaining opinions on the impact of automation on employment, federal efforts to predict its impact, the dissemination of information about the job…

78 FR 31431 - Export Administration Regulations (EAR): Control of Spacecraft Systems and Related Items the...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-05-24

.... Paragraph 9A515.b would control ground control systems and training simulators ``specially designed'' for.... Paragraph .d would control certain radiation hardened microelectronic circuits that are ``specially designed... .a would control test, inspection, and production ``equipment'' ``specially designed'' for the...

Development of Micro and Nanostructured Materials for Interfacial Self-Healing

ERIC Educational Resources Information Center

Blaiszik, Benjamin James

2009-01-01

Damage in polymeric coatings, adhesives, microelectronic components, and composites spans many length scales. For small scale damage, autonomic self-healing can repair multiple damage modes without manual intervention. In autonomic self-healing materials, a healing response is triggered by damage to the material. Size scale considerations, such as…

76 FR 58045 - Amended Certification Regarding Eligibility To Apply for Worker Adjustment Assistance; Applied...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-09-19

... Leased Workers From Adecco Employment Services, Aerotek, Inc., CDI IT Solutions, Inc. (CDI Corporation..., Aerotek, Inc., CDI IT Solutions, D&Z Microelectronics, Pentagon Technology, Proactive Business Solution... include the Unemployment Insurance (UI) wages for on-site leased workers from CDI IT Solutions is reported...

Canada in the 21st Century - Triumph or Tragedy? The Front Line.

ERIC Educational Resources Information Center

Kilgour, David

1996-01-01

Argues that new patterns of trade and production combined with an emphasis on a knowledge-based economy/society make it imperative that Canada upgrade its educational system. Specifically notes that several growing and dominant industries (microelectronics, biotechnology, telecommunications) require a high-tech skilled labor force. (MJP)

Highest integration in microelectronics: Development of digital ASICs for PARS3-LR

NASA Astrophysics Data System (ADS)

Scholler, Peter; Vonlutz, Rainer

Essential electronic system components by PARS3-LR, show high requirements in calculation power, power consumption and reliability, by immediately increasing integration thicknesses. These problems are solved by using integrated circuits, developed by LSI LOGIC, that uses the technical and economic advantages of this leading edge technology.

The Programmable Calculator in the Classroom.

ERIC Educational Resources Information Center

Stolarz, Theodore J.

The uses of programable calculators in the mathematics classroom are presented. A discussion of the "microelectronics revolution" that has brought programable calculators into our society is also included. Pointed out is that the logical or mental processes used to program the programable calculator are identical to those used to program…

CMOS Ultra Low Power Radiation Tolerant (CULPRiT) Microelectronics

NASA Technical Reports Server (NTRS)

Yeh, Penshu; Maki, Gary

2007-01-01

Space Electronics needs Radiation Tolerance or hardness to withstand the harsh space environment: high-energy particles can change the state of the electronics or puncture transistors making them disfunctional. This viewgraph document reviews the use of CMOS Ultra Low Power Radiation Tolerant circuits for NASA's electronic requirements.

Educational Technology in the Crystal Ball.

ERIC Educational Resources Information Center

Langham-Johnson, Shirley

This paper predicts that microelectronic circuitry will have an impact on education comparable to that of the industrial revolution or the invention of the printing press. Present conditions influencing educational technology and trends are considered in light of five considerations: (1) recent redefinitions of what educational technology is; (2)…

Optical and Interface-Based Methods of Defect Engineering in Silicon

ERIC Educational Resources Information Center

Kondratenko, Yevgeniy Vladimirovich

2009-01-01

Ion implantation is widely used in the microelectronics industry for fabrication of source and drain transistor regions. Unfortunately, implantation causes considerable damage to the substrate lattice rendering most of the implanted dopant electrically inactive. Rapid thermal annealing (RTA) heals the damage by rapidly heating the substrate with a…

Secondary School Projects and the Microchip.

ERIC Educational Resources Information Center

Irvine, A. F.

This study of the applications of microelectronic devices in industry, together with an assessment of their value for use in schools, emphasizes the basic principles underlying the new technology and the practical ways in which these can contribute to associated work in computing and other disciplines in the school curriculum. Following a…

Contamination control in hybrid microelectronic modules. Identification of critical process and contaminants, part 1

NASA Technical Reports Server (NTRS)

Himmel, R. P.

1975-01-01

Hybrid processes, handling procedures, and materials were examined to identify the critical process steps in which contamination is most likely to occur, to identify the particular contaminants associated with these critical steps, and to propose method for the control of these contaminants.

Flow Visualization Study of Natural Convection from a Heated Protrusion in a Liquid Filled Rectangular Enclosure.

DTIC Science & Technology

1983-12-01

PROPOSED SOLUTIONS Many papers have been published outlining alternative methods of thermally controlling microelectronic devices. Hannemann [3] describes...Workshop, NSF Grant ENG-7701297, Directions of Heat Transfer in Electronic Equipment, Fy R. C. Chu, 1977. 3. Hannemann , R., "Electronic System Thermal

Superconducting flux flow digital circuits

DOEpatents

Hietala, V.M.; Martens, J.S.; Zipperian, T.E.

1995-02-14

A NOR/inverter logic gate circuit and a flip flop circuit implemented with superconducting flux flow transistors (SFFTs) are disclosed. Both circuits comprise two SFFTs with feedback lines. They have extremely low power dissipation, very high switching speeds, and the ability to interface between Josephson junction superconductor circuits and conventional microelectronics. 8 figs.

Controlling sediment collection with data loggers

Treesearch

Rand E. Eads

1991-01-01

Abstract - The proliferation of commercial non-programmable data loggers in the past five years has done little to increase sediment sampling efficiency in remote locations. Recent advances in microelectronics have encouraged the development of commercial, low-power, programmable data loggers at reasonable cost. Although some facets of hydrologic data collection may...

ASIC/FPGA Trust Assessment Framework

NASA Technical Reports Server (NTRS)

Berg, Melanie

2018-01-01

NASA Electronic Parts and Packaging (NEPP) is developing a process to be employed in critical applications. The framework assesses levels of Trust and assurance in microelectronic systems. The process is being created with participation from a variety of organizations. We present a synopsis of the framework that includes contributions from The Aerospace Corporation.

Heterogeneous Integration Technology

DTIC Science & Technology

2017-05-19

Distribution A. Approved for public release; distribution unlimited. (APRS-RY-17-0383) Heterogeneous Integration Technology Dr. Burhan...2013 and 2015 [4]. ...................................... 9 Figure 3: 3D integration of similar or diverse technology components follows More Moore and...10 Figure 4: Many different technologies are used in the implementation of modern microelectronics systems can benefit from

Point process statistics in atom probe tomography.

PubMed

Philippe, T; Duguay, S; Grancher, G; Blavette, D

2013-09-01

We present a review of spatial point processes as statistical models that we have designed for the analysis and treatment of atom probe tomography (APT) data. As a major advantage, these methods do not require sampling. The mean distance to nearest neighbour is an attractive approach to exhibit a non-random atomic distribution. A χ(2) test based on distance distributions to nearest neighbour has been developed to detect deviation from randomness. Best-fit methods based on first nearest neighbour distance (1 NN method) and pair correlation function are presented and compared to assess the chemical composition of tiny clusters. Delaunay tessellation for cluster selection has been also illustrated. These statistical tools have been applied to APT experiments on microelectronics materials. Copyright © 2012 Elsevier B.V. All rights reserved.

Flake like V{sub 2}O{sub 5} nanoparticles for ethanol sensing at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chitra, M.; Uthayarani, K.; Rajasekaran, N.

2016-05-23

The versatile redox property of vanadium oxide explores it in various applications like catalysis, electrochromism, electrochemistry, energy storage, sensors, microelectronics, batteries etc., In this present work, vanadium oxide was prepared via hydrothermal route followed by calcination. The structural and lattice parameters were analysed from the powder X-ray diffraction (XRD) pattern. The morphology and the composition of the sample were obtained from Field emission Scanning electron microscopic (FeSEM) and Energy Dispersive X-ray (EDAX) Spectrometric analysis respectively. The sensitivity, response – recovery time of the sample towards ethanol (0 ppm – 300 ppm) sensing at room temperature was measured and the present investigation onmore » vanadium oxide nanoparticles over the flakes shows better sensitivity (30%) at room temperature.« less

The practice of problem-based investigative teaching reform in semiconductor physics course

NASA Astrophysics Data System (ADS)

Chen, Aiping; Wu, Gaojian; Gu, Dawei; Jiang, Hongying; Wang, Lei

2017-08-01

Semiconductor physics is an important basic course for the students of the majors of applied physics, optoelectronics, and microelectronics. The authors have been carrying out investigative-teaching reform in semiconductor physics teaching. Firstly, the teaching content was re-structured based on scientific problems. Secondly, the students were placed in groups to discuss different scientific problems and to present a few short science-reports. Thirdly, micro-lesson videos were produced for the students to study and analyze before or after class. With comparative analysis, we find out that the semiconductor-physics curriculum content was greatly enriched. In addition, the students' learning motivation and scientific thinking ability increased, and their innovation ability was improved. Overall, the teaching quality of the semiconductor physics course could be significantly improved.

Heat detection and compositions and devices therefor

NASA Technical Reports Server (NTRS)

Rembaum, A. (Inventor)

1975-01-01

Temperature change of a substrate such as a microelectronic component is sensed and detected by means of a mixture of a weak molecular complex of an electron donor compound such as an organic amine and an electron acceptor compound such as nitroaromatic compound. The mixture is encapsulated in a clear binder such as a vinyl resin.

Database Management Systems: A Case Study of Faculty of Open Education

ERIC Educational Resources Information Center

Kamisli, Zehra

2004-01-01

We live in the information and the microelectronic age, where technological advancements become a major determinant of our lifestyle. Such advances in technology cannot possibly be made or sustained without concurrent advancement in management systems (5). The impact of computer technology on organizations and society is increasing as new…

Synthetic thermoelectric materials comprising phononic crystals

DOEpatents

El-Kady, Ihab F; Olsson, Roy H; Hopkins, Patrick; Reinke, Charles; Kim, Bongsang

2013-08-13

Synthetic thermoelectric materials comprising phononic crystals can simultaneously have a large Seebeck coefficient, high electrical conductivity, and low thermal conductivity. Such synthetic thermoelectric materials can enable improved thermoelectric devices, such as thermoelectric generators and coolers, with improved performance. Such synthetic thermoelectric materials and devices can be fabricated using techniques that are compatible with standard microelectronics.

Micro-Electronics, Robotics and Jobs. Information Computer Communication Policy Series No. 7.

ERIC Educational Resources Information Center

Organisation for Economic Cooperation and Development, Paris (France).

This monograph contains selected papers presented at the Second Special Session on Information Technologies, Productivity and Labour Market Implications, which took place at the Organisation for Economic Cooperation and Development on October 19-21, 1981. An introductory note summarizes significant points from the meeting. Part 1 contains a report…

A New Microelectronics Curriculum Created by Synopsys, Inc.

ERIC Educational Resources Information Center

Goldman, Rich; Bartleson, Karen; Wood, Troy; Melikyan, Vazgen; Wang, Zhi-hua; Chen, Lan

2009-01-01

Rapid changes in integrated circuits (IC) technology and constantly shrinking process geometries demand a new curriculum that meets the contemporary requirements for IC design. This is especially important for 90nm and below technologies and the use of state-of-the-art EDA design tools and advanced IC design techniques. The creation of new…

Microcomputer Materials from MEP. An Annotated Directory of Packages of Interest to Further Education. An Occasional Paper.

ERIC Educational Resources Information Center

Gilbert, Leslie

Designed to disseminate information to the post-school sector of United Kingdom education, this directory provides information on 50 microcomputer software packages developed by the Microelectronics Education Program (MEP) and available through educational publishers. Subject areas represented include accountancy, biology, business education,…

Positioning Education in the Information Society: The Transnational Diffusion of the Information and Communication Technology Curriculum

ERIC Educational Resources Information Center

Ham, Seung-Hwan; Cha, Yun-Kyung

2009-01-01

One of the most distinctive qualities that characterize present-day society is the social fact that people are shifting to the information age. In recent years, they have witnessed remarkable developments in information and communication technology (ICT), in which microelectronics, computers, and telecommunications have converged. Transnational…

Report on High Technology Programs in Illinois Public Community Colleges.

ERIC Educational Resources Information Center

Illinois Community Coll. Board, Springfield.

Survey results are presented from a study of the steps being taken by the 52 Illinois public community colleges to develop and provide programs in high technology fields. First, high technology programs are defined as those occupational programs that educate and train individuals to operate, maintain, and/or repair micro-electronic or computerized…

Learning Platform for Study of Power Electronic Application in Power Systems

ERIC Educational Resources Information Center

Bauer, P.; Rompelman, O.

2005-01-01

Present engineering has to deal with increasingly complex systems. In particular, this is the case in electrical engineering. Though this is obvious in microelectronics, also in the field of power systems engineers have to design, operate and maintain highly complex systems such as power grids, energy converters and electrical drives. This is…

Microelectronics (Electronic Devices) Research, Development, Test, and Evaluation Laboratories with DoD

DTIC Science & Technology

1994-04-08

Range, New Mexico , the National Aeronautics and Space Administration Langley Research Center in Hampton, Virginia, and the Lewis Research Center in...SUBMITTED TO CONGRESS MARCH 1993 40 Appendix £. Excerpt from the Army’s Justification for DoD Base Realignment and Closure SEXt BYSASD iNLi i/Ba

Investigation of Jet Impingement Cooling Using High Prandtl Number Fluids and Ammonia for Military Applications

DTIC Science & Technology

2004-03-01

interesting application of liquid jets impinging over a surface is for the cooling of microelectronics. Wadsworth and Mudawar [29] performed an...and I. Mudawar , Cooling of a Multiple Electronic Module by Means of Confined Two-Dimensional Jets of Dielectric Liquid, Journal of Heat Transfer, vol

Architecture Of A Sciencecraft To Fly Past Pluto

NASA Technical Reports Server (NTRS)

Price, Humphrey W.; Staehle, Robert L.; Alkalaj, Leon; Terrile, Richard J.; Miyake, Robert N.

1995-01-01

Two reports discuss architecture of proposed small sciencecraft carrying scientific instruments on trajectory passing near Pluto and continuing into interstellar space. Emphasizes those aspects of design pertaining to compactness, efficiency, and small mass (dry mass less than 100 kg). System block diagram of sciencecraft divided into blocks for sensors, integrated microelectronics, and motive effectors.

A Methodology to Teach Advanced A/D Converters, Combining Digital Signal Processing and Microelectronics Perspectives

ERIC Educational Resources Information Center

Quintans, C.; Colmenar, A.; Castro, M.; Moure, M. J.; Mandado, E.

2010-01-01

ADCs (analog-to-digital converters), especially Pipeline and Sigma-Delta converters, are designed using complex architectures in order to increase their sampling rate and/or resolution. Consequently, the learning of ADC devices also encompasses complex concepts such as multistage synchronization, latency, oversampling, modulation, noise shaping,…

Breakthrough: micro-electronic photovoltaics

ScienceCinema

Okandan, Murat; Gupta, Vipin

2018-01-16

Sandia developed tiny glitter-sized photovoltaic (PV) cells that could revolutionize solar energy collection. The crystalline silicon micro-PV cells will be cheaper and have greater efficiencies than current PV collectors. Micro-PV cells require relatively little material to form well-controlled, highly efficient devices. Cell fabrication uses common microelectric and micro-electromechanical systems (MEMS) techniques.

Selective Bibliography on the History of Computing and Information Processing.

ERIC Educational Resources Information Center

Aspray, William

1982-01-01

Lists some of the better-known and more accessible books on the history of computing and information processing, covering: (1) popular general works; (2) more technical general works; (3) microelectronics and computing; (4) artificial intelligence and robotics; (5) works relating to Charles Babbage; (6) other biographical and personal accounts;…

Modeling of Impression Testing to Obtain Mechanical Properties of Lead-Free Solders Microelectronic Interconnects

DTIC Science & Technology

2005-12-01

hardening exponent and Cimp is the impression strain-rate hardening coefficient. The strain-rate hardening exponent m is a parameter that is...exponent and Cimp is the impression strain-rate hardening coefficient. The strain-rate hardening exponent m is a parameter that is related to the creep

Microelectronic Precision Optical Element Fabrication

DTIC Science & Technology

2009-01-01

spectra for a 0-25V reverse bias and the device tilted at -35° to the optical axis. Also shown is the diode reverse bias I-V curve . 1530 1540...optical modulator using an MEMS deformable micromirror array," Journal of Lightwave Technology, vol. 24(1), pp. 516-525, January 2006. [4] D. H. Parker, M

Proceedings: DISE Workshop on Microprocessors and Education (Fort Collins, Colorado, August 16-18, 1976).

ERIC Educational Resources Information Center

Pittsburgh Univ., PA. Dept. of Electrical Engineering.

Papers presented during four sessions of a workshop, which addressed the role of microprocessors in education, are included in this publication. The issues covered involved seven areas: (1) views of the microelectronics industry; (2) microprocessor architecture; (3) microprocessor chip design; (4) microprocessor software; (5) the impact of…

Microprocessor Design Using Hardware Description Language

ERIC Educational Resources Information Center

Mita, Rosario; Palumbo, Gaetano

2008-01-01

The following paper has been conceived to deal with the contents of some lectures aimed at enhancing courses on digital electronic, microelectronic or VLSI systems. Those lectures show how to use a hardware description language (HDL), such as the VHDL, to specify, design and verify a custom microprocessor. The general goal of this work is to teach…

The Effects of Microprocessors on Industry, Society and Employment: A Meeting of the Frontier Group on Strategies for Change in a Technological Society (Bath, England, March 13, 1979).

ERIC Educational Resources Information Center

Harris, N. D. C.

Discussed are the multiple impacts of microelectronics on society. Included are discussions of the problem of predicting effects, difficulty of exploiting new technology, manpower consequences, and needs within the United Kingdom relating to microprocessors. (RE)

Method for anisotropic etching in the manufacture of semiconductor devices

NASA Technical Reports Server (NTRS)

Koontz, Steven L. (Inventor); Cross, Jon B. (Inventor)

1993-01-01

Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by hyperthermal atomic oxygen beams (translational energies of 0.2 to 20 eV, preferably 1 to 10 eV). Etching with hyperthermal oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask protected areas.

Education and Training in Japan in the Cybernetic Age. Program Report No. 85-B2.

ERIC Educational Resources Information Center

Muta, Hiromitsu

The introduction of computers and other microelectronic equipment throughout the Japanese economy has not affected employment negatively, owing to economic growth and the adaptability of the workers and business organizations affected. Because rapid advances in technology are making many specialized skills and areas of knowledge obsolete, it is…

Gate-Level Commercial Microelectronics Verification with Standard Cell Recognition

DTIC Science & Technology

2015-03-26

21 2.2.1.4 Algorithm Insufficiencies as Applied to DARPA’s Cir- cuit Verification Efforts . . . . . . . . . . . . . . . . . . 22 vi Page...58 4.2 Discussion of SCR Algorithm and Code . . . . . . . . . . . . . . . . . . . 91 4.2.1 Explication of SCR Algorithm ...93 4.2.2 Algorithm Attributes . . . . . . . . . . . . . . . . . . . . . . . . . 118 4.3 Advantages of Transistor-level Verification with SCR

Electronic Records Management and Archives in International Organizations: A RAMP Study with Guidelines.

ERIC Educational Resources Information Center

Dollar, Charles M.

This study is a review of trends in information-handling technology and significant developments which are changing or will change the general environment within which archivists and records managers in international organizations will have to work. Trends in microelectronics, electronic storage, software, data transmission, computer architecture,…

Method for anisotropic etching in the manufacture of semiconductor devices

DOEpatents

Koontz, Steven L.; Cross, Jon B.

1993-01-01

Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by atomic oxygen beams (translational energies of 0.2-20 eV, preferably 1-10 eV). Etching with hyperthermal (kinetic energy>1 eV) oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask-protected areas.

Potential Applications and Impact of Microelectronic and Telecommunication Technology in Health Care Delivery. Final Report.

ERIC Educational Resources Information Center

Mandex, Inc., Vienna, VA.

This compendium of current and recent innovative methods of health care delivery focuses on telemedicine, and educational and energy management and control applications. Each application is doumented in a project abstract describing the system and the technology employed, and citing relevant information sources and a personal or organizational…

Rugged microelectronic module package supports circuitry on heat sink

NASA Technical Reports Server (NTRS)

Johnson, A. L.

1966-01-01

Rugged module package for thin film hybrid microcircuits incorporated a rigid, thermally conductive support structure, which serves as a heat sink, and a lead wire block in which T-shaped electrical connectors are potted. It protects the circuitry from shock and vibration loads, dissipates internal heat, and simplifies electrical connections between adjacent modules.

Chemical Engineering Curricula for the Future: Synopsis of Proceedings of a U.S.-India Conference, January, 1988.

ERIC Educational Resources Information Center

Ramkrishna, D.; And Others

1989-01-01

This is a summary of a seminar for changing the undergraduate chemical engineering curriculum in India. Identifies and describes biotechnology, materials for structural and microelectronic catalysis, and new separation processes as emerging areas. Evaluates the current curriculum, including basic science, engineering lore, chemical engineering,…

A Reliability Simulator for Radiation-Hard Microelectronics Development

DTIC Science & Technology

1991-07-01

1 3.0 PHASE II WORK PLANS ................................................................ 2... plan . The correlation experimental details including the devices utilized, the hot-carrier stressing and the wafer-level radiation correlation procedure...channel devices, and a new lifetime extrapolation method is demonstrated for p-channel devices. 3.0 PHASE II WORK PLANS The Phase 1I program consisted of

State-of-the-art methods for testing materials outdoors

Treesearch

R. Sam Williams

2004-01-01

In recent years, computers, sensors, microelectronics, and communication technologies have made it possible to automate the way materials are tested in the field. It is now possible to purchase monitoring equipment to measure weather and materials properties. The measurement of materials response often requires innovative approaches and added expense, but the...

A Multimedia Telematics Network for On-the-Job Training, Tutoring and Assessment.

ERIC Educational Resources Information Center

Ferreira, J. M. Martins; MacKinnon, Lachlan; Desmulliez, Marc; Foulk, Patrick

This paper describes an educational multimedia network developed in Advanced Software for Training and Evaluation of Processes (ASTEP). ASTEP started in February 1998 and was set up by a mixed industry-academia consortium with the objective of meeting the educational/training demands of the highly competitive microelectronics/semiconductor…

2011 NRL REVIEW

DTIC Science & Technology

2011-01-01

other mechanism ? What accelerates the solar wind? What are the near- Sun plasma properties (particle density, magnetic field)? Does the solar wind come...microstructure character iza tion, elec tronic ceramics, solid-state physics, fiber optics, electro-optics, microelectronics, fracture mechan ics...computational fluid mechanics , experi mental structural mechanics , solid me chan ics, elastic/plastic fracture mechanics , materials, finite-element

A Comparison of High-Energy Electron and Cobalt-60 Gamma-Ray Radiation Testing

NASA Technical Reports Server (NTRS)

Boutte, Alvin J.; Campola, Michael J.; Carts, Martin A.; Wilcox, Edward P.; Marshall, Cheryl J.; Phan, Anthony M.; Pellish, Jonathan A.; Powell, Wesley A.; Xapsos, Michael A.

2012-01-01

In this paper, a comparison between the effects of irradiating microelectronics with high energy electrons and Cobalt-60 gamma-rays is examined. Additionally, the effect of electron energy is also discussed. A variety of part types are investigated, including discrete bipolar transistors, hybrids, and junction field effect transistors

A Brief History of ... Semiconductors

ERIC Educational Resources Information Center

Jenkins, Tudor

2005-01-01

The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

The Communications Technology Explosion: Now That the School Media Specialist and Everyone Else is a Technologist.

ERIC Educational Resources Information Center

Belland, John C.

1982-01-01

Technological advances in microelectronics-photonics, brain research, and genetic manipulation are discussed, along with their implications for school media programs. Three possible futures for the year 2001 are proffered. Media specialists are urged to adopt only those technologies which truly contribute to efficient management, information…

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Huizhen; Zhao, Dian; Cui, Yuangjing, E-mail: cuiyj@zju.edu.cn

Temperature measurements and thermal mapping using luminescent MOF operating in the high-temperature range are of great interest in the micro-electronic diagnosis. In this paper, we report a thermostable Eu/Tb-mixed MOF Eu{sub 0.37}Tb{sub 0.63}-BTC-a exhibiting strong luminescence at elevated temperature, which can serve as a ratiometric luminescent thermometer for high-temperature range. The high-temperature operating range (313–473 K), high relative sensitivity and accurate temperature resolution, make such a Eu/Tb-mixed MOF useful for micro-electronic diagnosis. - Graphical abstract: A thermostable Eu/Tb-mixed MOF Eu{sub 0.37}Tb{sub 0.63}-BTC-a was developed as a ratiometric luminescent thermometers in the high-temperature range of 313–473 K. - Highlights: • Amore » thermostable Eu/Tb-codoped MOF exhibiting strong luminescent at elevated temperature is reported. • The high-temperature operating range of Eu{sub 0.37}Tb{sub 0.63}-BTC-a is 313–473 K. • The mechanism of Eu{sub 0.37}Tb{sub 0.63}-BTC-a used as thermometers are also discussed.« less

Soft-Matter Printed Circuit Board with UV Laser Micropatterning.

PubMed

Lu, Tong; Markvicka, Eric J; Jin, Yichu; Majidi, Carmel

2017-07-05

When encapsulated in elastomer, micropatterned traces of Ga-based liquid metal (LM) can function as elastically deformable circuit wiring that provides mechanically robust electrical connectivity between solid-state elements (e.g., transistors, processors, and sensor nodes). However, LM-microelectronics integration is currently limited by challenges in rapid fabrication of LM circuits and the creation of vias between circuit terminals and the I/O pins of packaged electronics. In this study, we address both with a unique layup for soft-matter electronics in which traces of liquid-phase Ga-In eutectic (EGaIn) are patterned with UV laser micromachining (UVLM). The terminals of the elastomer-sealed LM circuit connect to the surface mounted chips through vertically aligned columns of EGaIn-coated Ag-Fe 2 O 3 microparticles that are embedded within an interfacial elastomer layer. The processing technique is compatible with conventional UVLM printed circuit board (PCB) prototyping and exploits the photophysical ablation of EGaIn on an elastomer substrate. Potential applications to wearable computing and biosensing are demonstrated with functional implementations in which soft-matter PCBs are populated with surface-mounted microelectronics.

Laser ultrasonic characterization of membranes for use as micro-electronic mechanical systems (MEMS)

NASA Astrophysics Data System (ADS)

Edwards, R. S.; Zhou, L. Q.; Pearce, M. J.; Prince, R. G.; Colston, G.; Myronov, M.; Leadley, D. R.; Trushkevych, O.

2017-02-01

Germanium (Ge) on Silicon (Si) has the potential to produce a wide variety of devices, including sensors, solar cells and transistors. Modification of these materials so that a suspended membrane layer is formed, through removing regions of the Si substrate, offers the potential for sensors with a more rapid response and higher sensitivity. Such membranes are a very simple micro-electronic mechanical system (MEMS). It is essential to ensure that the membranes are robust against shock and vibration, with well-characterised resonant frequencies, prior to any practical application. We present work using laser interferometry to characterise the resonant modes of membranes produced from Ge or silicon carbide (SiC) on a Si substrate, with the membranes typically having around 1 mm lateral dimensions. Two dimensional scanning of the sample enables visualisation of each mode. The stress measured from the resonant frequencies agrees well with that calculated from the growth conditions. SiC provides a more robust platform for electronics, while Ge offers better resonant properties. This offers a potential technique for characterising production quality or lifetime testing for the MEMS produced.

Morphable 3D mesostructures and microelectronic devices by multistable buckling mechanics.

PubMed

Fu, Haoran; Nan, Kewang; Bai, Wubin; Huang, Wen; Bai, Ke; Lu, Luyao; Zhou, Chaoqun; Liu, Yunpeng; Liu, Fei; Wang, Juntong; Han, Mengdi; Yan, Zheng; Luan, Haiwen; Zhang, Yijie; Zhang, Yutong; Zhao, Jianing; Cheng, Xu; Li, Moyang; Lee, Jung Woo; Liu, Yuan; Fang, Daining; Li, Xiuling; Huang, Yonggang; Zhang, Yihui; Rogers, John A

2018-03-01

Three-dimensional (3D) structures capable of reversible transformations in their geometrical layouts have important applications across a broad range of areas. Most morphable 3D systems rely on concepts inspired by origami/kirigami or techniques of 3D printing with responsive materials. The development of schemes that can simultaneously apply across a wide range of size scales and with classes of advanced materials found in state-of-the-art microsystem technologies remains challenging. Here, we introduce a set of concepts for morphable 3D mesostructures in diverse materials and fully formed planar devices spanning length scales from micrometres to millimetres. The approaches rely on elastomer platforms deformed in different time sequences to elastically alter the 3D geometries of supported mesostructures via nonlinear mechanical buckling. Over 20 examples have been experimentally and theoretically investigated, including mesostructures that can be reshaped between different geometries as well as those that can morph into three or more distinct states. An adaptive radiofrequency circuit and a concealable electromagnetic device provide examples of functionally reconfigurable microelectronic devices.

A novel three-jet microreactor for localized metal-organic chemical vapour deposition of gallium arsenide: design and simulation

NASA Astrophysics Data System (ADS)

Konakov, S. A.; Krzhizhanovskaya, V. V.

2016-08-01

We present a novel three-jet microreactor design for localized deposition of gallium arsenide (GaAs) by low-pressure Metal-Organic Chemical Vapour Deposition (MOCVD) for semiconductor devices, microelectronics and solar cells. Our approach is advantageous compared to the standard lithography and etching technology, since it preserves the nanostructure of the deposited material, it is less time-consuming and less expensive. We designed two versions of reactor geometry with a 10-micron central microchannel for precursor supply and with two side jets of a dilutant to control the deposition area. To aid future experiments, we performed computational modeling of a simplified-geometry (twodimensional axisymmetric) microreactor, based on Navier-Stokes equations for a laminar flow of chemically reacting gas mixture of Ga(CH3)3-AsH3-H2. Simulation results show that we can achieve a high-rate deposition (over 0.3 μm/min) on a small area (less than 30 μm diameter). This technology can be used in material production for microelectronics, optoelectronics, photovoltaics, solar cells, etc.

All-gas-phase synthesis of UiO-66 through modulated atomic layer deposition

PubMed Central

Lausund, Kristian Blindheim; Nilsen, Ola

2016-01-01

Thin films of stable metal-organic frameworks (MOFs) such as UiO-66 have enormous application potential, for instance in microelectronics. However, all-gas-phase deposition techniques are currently not available for such MOFs. We here report on thin-film deposition of the thermally and chemically stable UiO-66 in an all-gas-phase process by the aid of atomic layer deposition (ALD). Sequential reactions of ZrCl4 and 1,4-benzenedicarboxylic acid produce amorphous organic–inorganic hybrid films that are subsequently crystallized to the UiO-66 structure by treatment in acetic acid vapour. We also introduce a new approach to control the stoichiometry between metal clusters and organic linkers by modulation of the ALD growth with additional acetic acid pulses. An all-gas-phase synthesis technique for UiO-66 could enable implementations in microelectronics that are not compatible with solvothermal synthesis. Since this technique is ALD-based, it could also give enhanced thickness control and the possibility to coat irregular substrates with high aspect ratios. PMID:27876797

[Medicine 4.0, the importance of electronics, information technology and microsystems in modern medicine - the case of customized chemotherapy].

PubMed

Wolf, Bernhard; Scholze, Christian

2018-05-01

A paradigm shift seems to emerge, not only in industrial engineering ("Industry 4.0") but also in medicine: we are on the threshold to "Medicine 4.0". For many years, molecular biology had a leading position in life sciences, but today scientists start realizing that microelectronic systems, due to an increasing miniaturization, are reaching the scale of human cells and consequently can be used for therapeutic approaches. This article shows how microelectronics can play a major role in modern medicine, through the example of customized chemotherapy. This consists in determining, before the beginning of the treatment, what kind of chemotherapy or drug combination will be most effective for a given patient, and at which dose. This of course allows the lessening of a patient burden during treatment, but also to be more efficient and, in the long run, to save money. In order to do this, we have developed the Intelligent Microplate Reader (IMR), which allows us to accurately test different drugs on living cells by mimicking part of their usual environment. © 2018 médecine/sciences – Inserm.

Space Radiation Effects and Reliability Consideration for the Proposed Jupiter Europa Orbiter

NASA Technical Reports Server (NTRS)

Johnston, Allan

2011-01-01

The proposed Jupiter Europa Orbiter (JEO) mission to explore the Jovian moon Europa poses a number of challenges. The spacecraft must operate for about seven years during the transit time to the vicinity of Jupiter, and then endure unusually high radiation levels during exploration and orbiting phases. The ability to withstand usually high total dose levels is critical for the mission, along with meeting the high reliability standards for flagship NASA missions. Reliability of new microelectronic components must be sufficiently understood to meet overall mission requirements.The proposed Jupiter Europa Orbiter (JEO) mission to explore the Jovian moon Europa poses a number of challenges. The spacecraft must operate for about seven years during the transit time to the vicinity of Jupiter, and then endure unusually high radiation levels during exploration and orbiting phases. The ability to withstand usually high total dose levels is critical for the mission, along with meeting the high reliability standards for flagship NASA missions. Reliability of new microelectronic components must be sufficiently understood to meet overall mission requirements.

Comparison of CREME (cosmic-ray effects on microelectronics) model LET (linear energy transfer) spaceflight dosimetry data

DOE Office of Scientific and Technical Information (OSTI.GOV)

Letaw, J.R.; Adams, J.H.

The galactic cosmic radiation (GCR) component of space radiation is the dominant cause of single-event phenomena in microelectronic circuits when Earth's magnetic shielding is low. Spaceflights outside the magnetosphere and in high inclination orbits are examples of such circumstances. In high-inclination orbits, low-energy (high LET) particles are transmitted through the field only at extreme latitudes, but can dominate the orbit-averaged dose. GCR is an important part of the radiation dose to astronauts under the same conditions. As a test of the CREME environmental model and particle transport codes used to estimate single event upsets, we have compiled existing measurements ofmore » HZE doses were compiled where GCR is expected to be important: Apollo 16 and 17, Skylab, Apollo Soyuz Test Project, and Kosmos 782. The LET spectra, due to direct ionization from GCR, for each of these missions has been estimated. The resulting comparisons with data validate the CREME model predictions of high-LET galactic cosmic-ray fluxes to within a factor of two. Some systematic differences between the model and data are identified.« less

Ultrasound aided smooth dispensing for high viscoelastic epoxy in microelectronic packaging.

PubMed

Chen, Yun; Li, Han-Xiong; Shan, Xiuyang; Gao, Jian; Chen, Xin; Wang, Fuliang

2016-01-01

Epoxy dispensing is one of the most critical processes in microelectronic packaging. However, due its high viscoelasticity, dispensing of epoxy is extremely difficult, and a lower viscoelasticity epoxy is desired to improve the process. In this paper, a novel method is proposed to achieve a lowered viscoelastic epoxy by using ultrasound. The viscoelasticity and molecular structures of the epoxies were compared and analyzed before and after experimentation. Different factors of the ultrasonic process, including power, processing time and ultrasonic energy, were studied in this study. It is found that elasticity is more sensitive to ultrasonic processing while viscosity is little affected. Further, large power and long processing time can minimize the viscoelasticity to ideal values. Due to the reduced loss modulus and storage modulus after ultrasonic processing, smooth dispensing is demonstrated for the processed epoxy. The subsequently color temperature experiments show that ultrasonic processing will not affect LED's lighting. It is clear that the ultrasonic processing will have good potential to aide smooth dispensing for high viscoelastic epoxy in electronic industry. Copyright © 2015 Elsevier B.V. All rights reserved.

Morphable 3D mesostructures and microelectronic devices by multistable buckling mechanics

NASA Astrophysics Data System (ADS)

Fu, Haoran; Nan, Kewang; Bai, Wubin; Huang, Wen; Bai, Ke; Lu, Luyao; Zhou, Chaoqun; Liu, Yunpeng; Liu, Fei; Wang, Juntong; Han, Mengdi; Yan, Zheng; Luan, Haiwen; Zhang, Yijie; Zhang, Yutong; Zhao, Jianing; Cheng, Xu; Li, Moyang; Lee, Jung Woo; Liu, Yuan; Fang, Daining; Li, Xiuling; Huang, Yonggang; Zhang, Yihui; Rogers, John A.

2018-03-01

Three-dimensional (3D) structures capable of reversible transformations in their geometrical layouts have important applications across a broad range of areas. Most morphable 3D systems rely on concepts inspired by origami/kirigami or techniques of 3D printing with responsive materials. The development of schemes that can simultaneously apply across a wide range of size scales and with classes of advanced materials found in state-of-the-art microsystem technologies remains challenging. Here, we introduce a set of concepts for morphable 3D mesostructures in diverse materials and fully formed planar devices spanning length scales from micrometres to millimetres. The approaches rely on elastomer platforms deformed in different time sequences to elastically alter the 3D geometries of supported mesostructures via nonlinear mechanical buckling. Over 20 examples have been experimentally and theoretically investigated, including mesostructures that can be reshaped between different geometries as well as those that can morph into three or more distinct states. An adaptive radiofrequency circuit and a concealable electromagnetic device provide examples of functionally reconfigurable microelectronic devices.

Advanced system on a chip microelectronics for spacecraft and science instruments

NASA Astrophysics Data System (ADS)

Paschalidis, Nikolaos P.

2003-01-01

The explosive growth of the modern microelectronics field opens new horizons for the development of new lightweight, low power, and smart spacecraft and science instrumentation systems in the new millennium explorations. Although this growth is mostly driven by the commercial need for low power, portable and computationally intensive products, the applicability is obvious in the space sector. The additional difficulties needed to be overcome for applicability in space include radiation hardness for total ionizing dose and single event effects (SEE), and reliability. Additionally, this new capability introduces a whole new philosophy of design and R&D, with strong implications in organizational and inter-agency program management. One key component specifically developed towards low power, small size, highly autonomous spacecraft systems, is the smart sensor remote input/output (TRIO) chip. TRIO can interface to 32 transducers with current sources/sinks and voltage sensing. It includes front-end analog signal processing, a 10-bit ADC, memory, and standard serial and parallel I/Os. These functions are very useful for spacecraft and subsystems health and status monitoring, and control actions. The key contributions of the TRIO are feasibility of modular architectures, elimination of several miles of wire harnessing, and power savings by orders of magnitude. TRIO freely operates from a single power supply 2.5- 5.5 V with power dissipation <10 mW. This system on a chip device rapidly becomes a NASA and Commercial Space standard as it is already selected by thousands in several new millennium missions, including Europa Orbiter, Mars Surveyor Program, Solar Probe, Pluto Express, Stereo, Contour, Messenger, etc. In the Science Instrumentation field common instruments that can greatly take advantage of the new technologies are: energetic-particle/plasma and wave instruments, imagers, mass spectrometers, X-ray and UV spectrographs, magnetometers, laser rangefinding instruments, etc. Common measurements that apply to many of these instruments are precise time interval measurement and high resolution read-out of solid state detectors. A precise time interval measurement chip was specially developed that achieves ˜100 ps (×10 improvement) time resolution at a power dissipation ˜20 mW (×50 improvement), dead time ˜1.5 μs (×20 improvement), and chip die size 5 mm×5 mm versus two 20 cm×20 cm doubled sided boards. This device is selected as a key enabling technology for several NASA particle, delay line imaging, and laser range finding instruments onboard (NASA Image, Messenger, etc. missions). Another device with universal application is radiation energy read-out from solid state detectors. Multi-channel low-power and end-to-end sensor input—digital output is key for the new generation instruments. The readout channel comprises of a Charge Sensitive Preamplifier with a target sensitivity of ˜1 KeV FWHM at 20 pf detector capacitance, a Shaper Amplifier with programmable time constant/gain, and an ADC. The read-out chip together with the precise time interval chip comprises the essential elements of a common particle spectroscopy instrument. To mention some more applications fast-signal acquisition—and digitization is a very useful function for a category of instrument such as mass spectroscopy and profile laser rangefinding. The single chip approach includes a high bandwidth preamplifier, fast sampling ˜5 ns, analog memory ˜10K locations, 12-bit ADC and serial/parallel I/Os. The wealth of the applications proves the advanced microelectronics field as a key enabling technology for the new millennium space exploration.

All-inkjet-printed thin-film transistors: manufacturing process reliability by root cause analysis

PubMed Central

Sowade, Enrico; Ramon, Eloi; Mitra, Kalyan Yoti; Martínez-Domingo, Carme; Pedró, Marta; Pallarès, Jofre; Loffredo, Fausta; Villani, Fulvia; Gomes, Henrique L.; Terés, Lluís; Baumann, Reinhard R.

2016-01-01

We report on the detailed electrical investigation of all-inkjet-printed thin-film transistor (TFT) arrays focusing on TFT failures and their origins. The TFT arrays were manufactured on flexible polymer substrates in ambient condition without the need for cleanroom environment or inert atmosphere and at a maximum temperature of 150 °C. Alternative manufacturing processes for electronic devices such as inkjet printing suffer from lower accuracy compared to traditional microelectronic manufacturing methods. Furthermore, usually printing methods do not allow the manufacturing of electronic devices with high yield (high number of functional devices). In general, the manufacturing yield is much lower compared to the established conventional manufacturing methods based on lithography. Thus, the focus of this contribution is set on a comprehensive analysis of defective TFTs printed by inkjet technology. Based on root cause analysis, we present the defects by developing failure categories and discuss the reasons for the defects. This procedure identifies failure origins and allows the optimization of the manufacturing resulting finally to a yield improvement. PMID:27649784

Development of a solid-phase microextraction gas chromatography with microelectron-capture detection method for a multiresidue analysis of pesticides in bovine milk.

PubMed

Fernandez-Alvarez, Maria; Llompart, Maria; Lamas, J Pablo; Lores, Marta; Garcia-Jares, Carmen; Cela, Rafael; Dagnac, Thierry

2008-06-09

A simple and rapid method based on solid-phase microextraction (SPME) technique followed by gas chromatography with microelectron-capture detection (GC-microECD) was developed for the simultaneous determination of more than 30 pesticides (pyrethroids and organochlorinated among others) in milk. To our knowledge, this is the first application of SPME for the determination of pyrethroid pesticides in milk. Negative matrix effects due to the complexity and lipophility of the studied matrix were reduced by diluting the sample with distilled water. A 2(5-1) fractional factorial design was performed to assess the influence of several factors (type of fiber coating, sampling mode, stirring, extraction temperature, and addition of sodium chloride) on the SPME procedure and to determine the optimal extraction conditions. After optimization of all the significant variables and interactions, the recommended procedure was established as follows: DSPME (using a polydimethylsiloxane (PDMS)/divinylbenzene (DVB) coating) of 1 mL of milk sample diluted with Milli-Q water (1:10 dilution ratio), at 100 degrees C, under stirring for 30 min. The proposed method showed good linearity and high sensitivity, with limits of detection (LOD) at the sub-ng mL(-1) level. Within a day and among days precisions were also evaluated (R.S.D.<15%). One of the most important attainments of this work was the use of external calibration with milk-matched standards to quantify the levels of the target analytes. The method was tested with liquid and powdered milk samples with different fat contents covering the whole commercial range. The efficiency of the extraction process was studied at several analyte concentration levels obtaining high recoveries (>80% in most cases) for different types of full-fat milks. The optimized procedure was validated with powdered milk certified reference material, which was quantified using external calibration and standard addition protocols. Finally, the DSPME-GC-microECD methodology was applied to the analysis of milk samples collected in farms of dairy cattle from NW Spain.

Contributions to the initial development of a microelectromechanical loop heat pipe, which is based on coherent porous silicon

NASA Astrophysics Data System (ADS)

Cytrynowicz, Debra G.

The research project itself was the initiation of the development of a planar miniature loop heat pipe based on a capillary wick structure made of coherent porous silicon. Work on this project fell into four main categories, which were component fabrication, test system construction, characterization testing and test data collection, performance analysis and thermal modeling. Component fabrication involved the production of various components for the evaporator. When applicable, these components were to be produced by microelectronic and MEMS or microelectromechanical fabrication techniques. Required work involved analyses and, where necessary, modifications to the wafer processing sequence, the photo-electrochemical etching process, system and controlling computer program to make it more reliable, flexible and efficient. The development of more than one wick production process was also extremely necessary in the event of equipment failure. Work on developing this alternative also involved investigations into various details of the photo-electrochemical etching process itself. Test system construction involved the actual assembly of open and closed loop test systems. Characterization involved developing and administering a series of tests to evaluate the performance of the wicks and test systems. Although there were some indications that the devices were operating according to loop heat pipe theory, they were transient and unstable. Performance analysis involved the construction of a transparent evaporator, which enabled the visual observation of the phenomena, which occurred in the evaporator during operation. It also involved investigating the effect of the quartz wool secondary wick on the operation of the device. Observations made during the visualization study indicated that the capillary and boiling limits were being reached at extremely low values of input power. The work was performed in a collaborative effort between the Biomedical Nanotechnology Research Laboratory at the University of Toledo, the Center for Microelectronics and Sensors and MEMS at the University of Cincinnati and the Thermo-Mechanical Systems Branch of the Power and On-Board Propulsion Division at the John H. Glenn Research Center of the National Aeronautics and Space Administration in Cleveland, Ohio. Work on the project produced six publications, which presented various details on component fabrication, tests system construction and characterization and thermal modeling.

Review of Graphene as a Solid State Diffusion Barrier.

PubMed

Morrow, Wayne K; Pearton, Stephen J; Ren, Fan

2016-01-06

Conventional thin-film diffusion barriers consist of 3D bulk films with high chemical and thermal stability. The purpose of the barrier material is to prevent intermixing or penetration from the two materials that encase it. Adhesion to both top and bottom materials is critical to the success of the barrier. Here, the effectiveness of a single atomic layer of graphene as a solid-state diffusion barrier for common metal schemes used in microelectronics is reviewed, and specific examples are discussed. Initial studies of electrical contacts to graphene show a distinct separation in behavior between metallic groups that strongly or weakly bond to it. The two basic classes of metal reactions with graphene are either physisorbed metals, which bond weakly with graphene, or chemisorbed metals, which bond strongly to graphene. For graphene diffusion barrier testing on Si substrates, an effective barrier can be achieved through the formation of a carbide layer with metals that are chemisorbed. For physisorbed metals, the barrier failure mechanism is loss of adhesion at the metal–graphene interface. A graphene layer encased between two metal layers, in certain cases, can increase the binding energy of both films with graphene, however, certain combinations of metal films are detrimental to the bonding with graphene. While the prospects for graphene's future as a solid-state diffusion barrier are positive, there are open questions, and areas for future research are discussed. A better understanding of the mechanisms which influence graphene's ability to be an effective diffusion barrier in microelectronic applications is required, and additional experiments are needed on a broader range of metals, as well as common metal stack contact structures used in microelectronic applications. The role of defects in the graphene is also a key area, since they will probably influence the barrier properties. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Three-dimensional modeling of n+-nu-n+ and p+-pi-p+ semiconducting devices for analog ULSI microelectronics

NASA Astrophysics Data System (ADS)

Gillet, Jean-Numa; Degorce, Jean-Yves; Belisle, Jonathan; Meunier, Michel

2004-03-01

Three-dimensional modeling of n^+-ν -n^+ and p^+-π -p^+ semiconducting devices for analog ULSI microelectronics Jean-Numa Gillet,^a,b Jean-Yves Degorce,^a Jonathan Bélisle^a and Michel Meunier.^a,c ^a École Polytechnique de Montréal, Dept. of Engineering Physics, CP 6079, Succ. Centre-vile, Montréal, Québec H3C 3A7, Canada. ^b Corresponding author. Email: Jean-Numa.Gillet@polymtl.ca ^c Also with LTRIM Technologies, 140-440, boul. A.-Frappier, Laval, Québec H7V 4B4, Canada. We present for the first time three-dimensional (3-D) modeling of n^+-ν -n^+ and p^+-π -p^+ semiconducting resistors, which are fabricated by laser-induced doping in a gateless MOSFET and present significant applications for analog ULSI microelectronics. Our modeling software is made up of three steps. The two first concerns modeling of a new laser-trimming fabrication process. With the molten-silicon temperature distribution obtained from the first, we compute in the second the 3-D dopant distribution, which creates the electrical link through the device gap. In this paper the emphasis is on the third step, which concerns 3-D modeling of the resistor electronic behavior with a new tube multiplexing algorithm (TMA). The device current-voltage (I-V) curve is usually obtained by solving three coupled partial differential equations with a finite-element method. A 3-D device as our resistor cannot be modeled with this classical method owing to its prohibitive computational cost in three dimensions. This problem is however avoided by our TMA, which divides the 3-D device into one-dimensional (1-D) multiplexed tubes. In our TMA 1-D systems of three ordinary differential equations are solved to determine the 3-D device I-V curve, which substantially increases computation speed compared with the classical method. Numerical results show a good agreement with experiments.

Finite Element Modeling of Micromachined MEMS Photon Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Datskos, P.G.; Evans, B.M.; Schonberger, D.

1999-09-20

The technology of microelectronics that has evolved over the past half century is one of great power and sophistication and can now be extended to many applications (MEMS and MOEMS) other than electronics. An interesting application of MEMS quantum devices is the detection of electromagnetic radiation. The operation principle of MEMS quantum devices is based on the photoinduced stress in semiconductors, and the photon detection results from the measurement of the photoinduced bending. These devices can be described as micromechanical photon detectors. In this work, we have developed a technique for simulating electronic stresses using finite element analysis. We havemore » used our technique to model the response of micromechanical photon devices to external stimuli and compared these results with experimental data. Material properties, geometry, and bimaterial design play an important role in the performance of micromechanical photon detectors. We have modeled these effects using finite element analysis and included the effects of bimaterial thickness coating, effective length of the device, width, and thickness.« less

Traceability and Risk Analysis Strategies for Addressing Counterfeit Electronics in Supply Chains for Complex Systems.

PubMed

DiMase, Daniel; Collier, Zachary A; Carlson, Jinae; Gray, Robin B; Linkov, Igor

2016-10-01

Within the microelectronics industry, there is a growing concern regarding the introduction of counterfeit electronic parts into the supply chain. Even though this problem is widespread, there have been limited attempts to implement risk-based approaches for testing and supply chain management. Supply chain risk management tends to focus on the highly visible disruptions of the supply chain instead of the covert entrance of counterfeits; thus counterfeit risk is difficult to mitigate. This article provides an overview of the complexities of the electronics supply chain, and highlights some gaps in risk assessment practices. In particular, this article calls for enhanced traceability capabilities to track and trace parts at risk through various stages of the supply chain. Placing the focus on risk-informed decision making through the following strategies is needed, including prioritization of high-risk parts, moving beyond certificates of conformance, incentivizing best supply chain management practices, adoption of industry standards, and design and management for supply chain resilience. © 2016 Society for Risk Analysis.

Tutorial: Determination of thermal boundary resistance by molecular dynamics simulations

NASA Astrophysics Data System (ADS)

Liang, Zhi; Hu, Ming

2018-05-01

Due to the high surface-to-volume ratio of nanostructured components in microelectronics and other advanced devices, the thermal resistance at material interfaces can strongly affect the overall thermal behavior in these devices. Therefore, the thermal boundary resistance, R, must be taken into account in the thermal analysis of nanoscale structures and devices. This article is a tutorial on the determination of R and the analysis of interfacial thermal transport via molecular dynamics (MD) simulations. In addition to reviewing the commonly used equilibrium and non-equilibrium MD models for the determination of R, we also discuss several MD simulation methods which can be used to understand interfacial thermal transport behavior. To illustrate how these MD models work for various interfaces, we will show several examples of MD simulation results on thermal transport across solid-solid, solid-liquid, and solid-gas interfaces. The advantages and drawbacks of a few other MD models such as approach-to-equilibrium MD and first-principles MD are also discussed.

Finite element modeling of micromachined MEMS photon devices

NASA Astrophysics Data System (ADS)

Evans, Boyd M., III; Schonberger, D. W.; Datskos, Panos G.

1999-09-01

The technology of microelectronics that has evolved over the past half century is one of great power and sophistication and can now be extended to many applications (MEMS and MOEMS) other than electronics. An interesting application of MEMS quantum devices is the detection of electromagnetic radiation. The operation principle of MEMS quantum devices is based on the photoinduced stress in semiconductors, and the photon detection results from the measurement of the photoinduced bending. These devices can be described as micromechanical photon detectors. In this work, we have developed a technique for simulating electronic stresses using finite element analysis. We have used our technique to model the response of micromechanical photon devices to external stimuli and compared these results with experimental data. Material properties, geometry, and bimaterial design play an important role in the performance of micromechanical photon detectors. We have modeled these effects using finite element analysis and included the effects of bimaterial thickness coating, effective length of the device, width, and thickness.

VLSI Technology: Impact and Promise. Identifying Emerging Issues and Trends in Technology for Special Education.

ERIC Educational Resources Information Center

Bayoumi, Magdy

As part of a 3-year study to identify emerging issues and trends in technology for special education, this paper addresses the implications of very large scale integrated (VLSI) technology. The first section reviews the development of educational technology, particularly microelectronics technology, from the 1950s to the present. The implications…

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Beihai; Balachandran, Uthamalingam

The invention provides a stacked capacitor configuration comprising subunits each with a thickness of as low as 20 microns. Also provided is combination capacitor and printed wire board wherein the capacitor is encapsulated by the wire board. The invented capacitors are applicable in micro-electronic applications and high power applications, whether it is AC to DC or DC to AC, or DC to DC.

Characterization of Chlorinated Solvent Degradation in a Constructed Wetland

DTIC Science & Technology

2003-03-25

the flows to be different under the same pressure. A 30m Restek RTX- VRX (Model 49314) column was connected to the micro-Electron Capture Detector...min) 2.00 Gas Type: Helium Column 1 (Restek 49314 RTX- VRX ) Column 2 (J&W 113-4332 GS-GASPRO) Max Temp (deg C) 260 Max Temp (deg C

Advanced Microelectronics and Materials Programs

DTIC Science & Technology

1991-12-01

of SiC /Si 3N 4 ceramic upon pyrolysis . This material was used to produce adherent coatings on a variety of substrates, and also infiltration ...the areas of Fiber Fabrication, Coatings and Infiltration , Composite Fabrication, and Physical/Mechanical Properties. Significant accomplishments...projects in the areas of Fiber Fabrication, Coatings and Infiltration , Composite Fabrication, and Physical/Mechanical Properties. Significant

Microstructure-Evolution and Reliability Assessment Tool for Lead-Free Component Insertion in Army Electronics

DTIC Science & Technology

2008-10-01

provide adequate means for thermal heat dissipation and cooling. Thus electronic packaging has four main functions [1]: • Signal distribution which... dissipation , involving structural and materials consideration. • Mechanical, chemical and electromagnetic protection of components and... nature when compared to phenomenological models. Microelectronic packaging industry spends typically several months building and reliability

Laser Applications in Microelectronic and Optoelectronic Manufacturing IV

DTIC Science & Technology

1999-07-15

laser irradiation of the clusters with 6000 laser pulses of X...insulating ma- terials during and after irradiation by tunable, ultrashort pulses from a mid-infrared laser . The three salient examples we con- sider...with ultrashort pulses re- sembles the rear-side ablation seen in irradiation of calcite by Nd:YAG lasers (1064 nm), while the off-resonance FEL

Automatic visual inspection system for microelectronics

NASA Technical Reports Server (NTRS)

Micka, E. Z. (Inventor)

1975-01-01

A system for automatically inspecting an integrated circuit was developed. A device for shining a scanning narrow light beam at an integrated circuit to be inspected and another light beam at an accepted integrated circuit was included. A pair of photodetectors that receive light reflected from these integrated circuits, and a comparing system compares the outputs of the photodetectors.

Molecular Design of Low-Density Multifunctional Hybrid Materials

DTIC Science & Technology

2016-01-01

properties, but also the synergistic interactions of reactive chemical and simulated solar UV environments with the hybrid film which leads to...applications possible including microelectronic interlayer dielectrics, antireflective coatings for solar cells , optical waveguides, size-selective...membranes, biosensors, micro-fluidic structures, and membranes in fuel cells . A critical aspect for all of these applications is that the hybrids

Education and the Transformation of Markets and Technology in the Textile Industry. Technical Paper No. 2.

ERIC Educational Resources Information Center

Bailey, Thomas

This report on the textile industry focuses on the training and education of production-level textile workers--from unskilled factory hands to first-level supervisors. It is part of a larger study of the educational implications of broad economic changes, particularly the spread of microelectronic technologies, growing national and international…

Automatic Single Event Effects Sensitivity Analysis of a 13-Bit Successive Approximation ADC

NASA Astrophysics Data System (ADS)

Márquez, F.; Muñoz, F.; Palomo, F. R.; Sanz, L.; López-Morillo, E.; Aguirre, M. A.; Jiménez, A.

2015-08-01

This paper presents Analog Fault Tolerant University of Seville Debugging System (AFTU), a tool to evaluate the Single-Event Effect (SEE) sensitivity of analog/mixed signal microelectronic circuits at transistor level. As analog cells can behave in an unpredictable way when critical areas interact with the particle hitting, there is a need for designers to have a software tool that allows an automatic and exhaustive analysis of Single-Event Effects influence. AFTU takes the test-bench SPECTRE design, emulates radiation conditions and automatically evaluates vulnerabilities using user-defined heuristics. To illustrate the utility of the tool, the SEE sensitivity of a 13-bits Successive Approximation Analog-to-Digital Converter (ADC) has been analysed. This circuit was selected not only because it was designed for space applications, but also due to the fact that a manual SEE sensitivity analysis would be too time-consuming. After a user-defined test campaign, it was detected that some voltage transients were propagated to a node where a parasitic diode was activated, affecting the offset cancelation, and therefore the whole resolution of the ADC. A simple modification of the scheme solved the problem, as it was verified with another automatic SEE sensitivity analysis.

Millimeter-scale MEMS enabled autonomous systems: system feasibility and mobility

NASA Astrophysics Data System (ADS)

Pulskamp, Jeffrey S.

2012-06-01

Millimeter-scale robotic systems based on highly integrated microelectronics and micro-electromechanical systems (MEMS) could offer unique benefits and attributes for small-scale autonomous systems. This extreme scale for robotics will naturally constrain the realizable system capabilities significantly. This paper assesses the feasibility of developing such systems by defining the fundamental design trade spaces between component design variables and system level performance parameters. This permits the development of mobility enabling component technologies within a system relevant context. Feasible ranges of system mass, required aerodynamic power, available battery power, load supported power, flight endurance, and required leg load bearing capability are presented for millimeter-scale platforms. The analysis illustrates the feasibility of developing both flight capable and ground mobile millimeter-scale autonomous systems while highlighting the significant challenges that must be overcome to realize their potential.

Modified low-temperture direct bonding method for vacuum microelectronics application

NASA Astrophysics Data System (ADS)

Ju, Byeong-Kwon; Lee, Duck-Jung; Choi, Woo-Beom; Lee, Yun-Hi; Jang, Jin; Lee, Kwang-Bae; Oh, Myung-Hwan

1997-06-01

This paper presents the process and experimental results for the improved silicon-to-glass bonding using silicon direct bonding (SDB) followed by anodic bonding. The initial bonding between glass and silicon was caused by the hydrophilic surfaces of silicon-glass ensemble using SDB method. Then the initially bonded specimen had to be strongly bonded by anodic bonding process. The effects of the bonding process parameters on the interface energy were investigated as functions of the bonding temperature and voltage. We found that the specimen which was bonded using SDB process followed by anodic bonding process had higher interface energy than one using anodic bonding process only. The main factor contributing to the higher interface energy in the glass-to-silicon assemble bonded by SDB followed by anodic bonding was investigated by secondary ion mass spectroscopy analysis.

Topologically Optimized Nano-Positioning Stage Integrating with a Capacitive Comb Sensor.

PubMed

Chen, Tao; Wang, Yaqiong; Liu, Huicong; Yang, Zhan; Wang, Pengbo; Sun, Lining

2017-01-28

Nano-positioning technology has been widely used in many fields, such as microelectronics, optical engineering, and micro manufacturing. This paper presents a one-dimensional (1D) nano-positioning system, adopting a piezoelectric ceramic (PZT) actuator and a multi-objective topological optimal structure. The combination of a nano-positioning stage and a feedback capacitive comb sensor has been achieved. In order to obtain better performance, a wedge-shaped structure is used to apply the precise pre-tension for the piezoelectric ceramics. Through finite element analysis and experimental verification, better static performance and smaller kinetic coupling are achieved. The output displacement of the system achieves a long-stroke of up to 14.7 μm and high-resolution of less than 3 nm. It provides a flexible and efficient way in the design and optimization of the nano-positioning system.

Electrochemical Impedance Sensors for Monitoring Trace Amounts of NO3 in Selected Growing Media.

PubMed

Ghaffari, Seyed Alireza; Caron, William-O; Loubier, Mathilde; Normandeau, Charles-O; Viens, Jeff; Lamhamedi, Mohammed S; Gosselin, Benoit; Messaddeq, Younes

2015-07-21

With the advent of smart cities and big data, precision agriculture allows the feeding of sensor data into online databases for continuous crop monitoring, production optimization, and data storage. This paper describes a low-cost, compact, and scalable nitrate sensor based on electrochemical impedance spectroscopy for monitoring trace amounts of NO3- in selected growing media. The nitrate sensor can be integrated to conventional microelectronics to perform online nitrate sensing continuously over a wide concentration range from 0.1 ppm to 100 ppm, with a response time of about 1 min, and feed data into a database for storage and analysis. The paper describes the structural design, the Nyquist impedance response, the measurement sensitivity and accuracy, and the field testing of the nitrate sensor performed within tree nursery settings under ISO/IEC 17025 certifications.

Electrochemical Impedance Sensors for Monitoring Trace Amounts of NO3 in Selected Growing Media

PubMed Central

Ghaffari, Seyed Alireza; Caron, William-O.; Loubier, Mathilde; Normandeau, Charles-O.; Viens, Jeff; Lamhamedi, Mohammed S.; Gosselin, Benoit; Messaddeq, Younes

2015-01-01

With the advent of smart cities and big data, precision agriculture allows the feeding of sensor data into online databases for continuous crop monitoring, production optimization, and data storage. This paper describes a low-cost, compact, and scalable nitrate sensor based on electrochemical impedance spectroscopy for monitoring trace amounts of NO3− in selected growing media. The nitrate sensor can be integrated to conventional microelectronics to perform online nitrate sensing continuously over a wide concentration range from 0.1 ppm to 100 ppm, with a response time of about 1 min, and feed data into a database for storage and analysis. The paper describes the structural design, the Nyquist impedance response, the measurement sensitivity and accuracy, and the field testing of the nitrate sensor performed within tree nursery settings under ISO/IEC 17025 certifications. PMID:26197322

The eyesafe visioceilometer - A tactical visibility and cloud height lidar

NASA Astrophysics Data System (ADS)

Barnes, E. S.; Lentz, W. J.

A recent breakthrough in the mathematical solution to the lidar equation combined with state-of-the-art microelectronics has made it possible to produce the first portable ceiling, visibility, and rangefinding device suitable for tactical use by the U.S. Army. The signal processor of the former XE-2 (Nd:YAG) can be adapted to an eyesafe unit by making use of an erbium glass laser and a GaInAs PIN photodiode detector. It is pointed out that the XE-3 (Eyesafe Visioceilometer) provides tactical real-time data when and where the user needs it, with an accuracy superior to existing nonportable runway equipment. Attention is given to system evolution, lidar theory, the relationship of backscattering and extinction coefficients, a system description, the transient recorder, the analysis of data, and details regarding tactical applications.

Topologically Optimized Nano-Positioning Stage Integrating with a Capacitive Comb Sensor

PubMed Central

Chen, Tao; Wang, Yaqiong; Liu, Huicong; Yang, Zhan; Wang, Pengbo; Sun, Lining

2017-01-01

Nano-positioning technology has been widely used in many fields, such as microelectronics, optical engineering, and micro manufacturing. This paper presents a one-dimensional (1D) nano-positioning system, adopting a piezoelectric ceramic (PZT) actuator and a multi-objective topological optimal structure. The combination of a nano-positioning stage and a feedback capacitive comb sensor has been achieved. In order to obtain better performance, a wedge-shaped structure is used to apply the precise pre-tension for the piezoelectric ceramics. Through finite element analysis and experimental verification, better static performance and smaller kinetic coupling are achieved. The output displacement of the system achieves a long-stroke of up to 14.7 μm and high-resolution of less than 3 nm. It provides a flexible and efficient way in the design and optimization of the nano-positioning system. PMID:28134854

Badhwar - O'Neill 2014 Galactic Cosmic Ray Flux Model Description

NASA Technical Reports Server (NTRS)

O'Neill, P. M.; Golge, S.; Slaba, T. C.

2014-01-01

The Badhwar-O'Neill (BON) Galactic Cosmic Ray (GCR) model is based on GCR measurements from particle detectors. The model has mainly been used by NASA to certify microelectronic systems and the analysis of radiation health risks to astronauts in space missions. The BON14 model numerically solves the Fokker-Planck differential equation to account for particle transport in the heliosphere due to diffusion, convection, and adiabatic deceleration under the assumption of a spherically symmetric heliosphere. The model also incorporates an empirical time delay function to account for the lag of the solar activity to reach the boundary of the heliosphere. This technical paper describes the most recent improvements in parameter fits to the BON model (BON14). Using a comprehensive measurement database, it is shown that BON14 is significantly improved over the previous version, BON11.

Strain field determination in III-V heteroepitaxy coupling finite elements with experimental and theoretical techniques at the nanoscale

NASA Astrophysics Data System (ADS)

Florini, Nikoletta; Dimitrakopulos, George P.; Kioseoglou, Joseph; Pelekanos, Nikos T.; Kehagias, Thomas

2017-04-01

We are briefly reviewing the current status of elastic strain field determination in III-V heteroepitaxial nanostructures, linking finite elements (FE) calculations with quantitative nanoscale imaging and atomistic calculation techniques. III-V semiconductor nanostructure systems of various dimensions are evaluated in terms of their importance in photonic and microelectronic devices. As elastic strain distribution inside nano-heterostructures has a significant impact on the alloy composition, and thus their electronic properties, it is important to accurately map its components both at the interface plane and along the growth direction. Therefore, we focus on the determination of the stress-strain fields in III-V heteroepitaxial nanostructures by experimental and theoretical methods with emphasis on the numerical FE method by means of anisotropic continuum elasticity (CE) approximation. Subsequently, we present our contribution to the field by coupling FE simulations on InAs quantum dots (QDs) grown on (211)B GaAs substrate, either uncapped or buried, and GaAs/AlGaAs core-shell nanowires (NWs) grown on (111) Si, with quantitative high-resolution transmission electron microscopy (HRTEM) methods and atomistic molecular dynamics (MD) calculations. Full determination of the elastic strain distribution can be exploited for band gap tailoring of the heterostructures by controlling the content of the active elements, and thus influence the emitted radiation.

CMOS-TDI detector technology for reconnaissance application

NASA Astrophysics Data System (ADS)

Eckardt, Andreas; Reulke, Ralf; Jung, Melanie; Sengebusch, Karsten

2014-10-01

The Institute of Optical Sensor Systems (OS) at the Robotics and Mechatronics Center of the German Aerospace Center (DLR) has more than 30 years of experience with high-resolution imaging technology. This paper shows the institute's scientific results of the leading-edge detector design CMOS in a TDI (Time Delay and Integration) architecture. This project includes the technological design of future high or multi-spectral resolution spaceborne instruments and the possibility of higher integration. DLR OS and the Fraunhofer Institute for Microelectronic Circuits and Systems (IMS) in Duisburg were driving the technology of new detectors and the FPA design for future projects, new manufacturing accuracy and on-chip processing capability in order to keep pace with the ambitious scientific and user requirements. In combination with the engineering research, the current generation of space borne sensor systems is focusing on VIS/NIR high spectral resolution to meet the requirements on earth and planetary observation systems. The combination of large-swath and high-spectral resolution with intelligent synchronization control, fast-readout ADC (analog digital converter) chains and new focal-plane concepts opens the door to new remote-sensing and smart deep-space instruments. The paper gives an overview of the detector development status and verification program at DLR, as well as of new control possibilities for CMOS-TDI detectors in synchronization control mode.

System-Level Integrated Circuit (SLIC) Technology Development for Phased Array Antenna Applications

NASA Technical Reports Server (NTRS)

Windyka, John A.; Zablocki, Ed G.

1997-01-01

This report documents the efforts and progress in developing a 'system-level' integrated circuit, or SLIC, for application in advanced phased array antenna systems. The SLIC combines radio-frequency (RF) microelectronics, digital and analog support circuitry, and photonic interfaces into a single micro-hybrid assembly. Together, these technologies provide not only the amplitude and phase control necessary for electronic beam steering in the phased array, but also add thermally-compensated automatic gain control, health and status feedback, bias regulation, and reduced interconnect complexity. All circuitry is integrated into a compact, multilayer structure configured for use as a two-by-four element phased array module, operating at 20 Gigahertz, using a Microwave High-Density Interconnect (MHDI) process. The resultant hardware is constructed without conventional wirebonds, maintains tight inter-element spacing, and leads toward low-cost mass production. The measured performances and development issues associated with both the two-by-four element module and the constituent elements are presented. Additionally, a section of the report describes alternative architectures and applications supported by the SLIC electronics. Test results show excellent yield and performance of RF circuitry and full automatic gain control for multiple, independent channels. Digital control function, while suffering from lower manufacturing yield, also proved successful.

Carbon Nanotube Aluminum Matrix Composites

DTIC Science & Technology

2010-08-01

from nanoscale transistors (2) and interconnects (3), supercapacitors (4), artificial muscle fibers (5), and even as axles in molecular vehicles (6...anything other than basic architectures. This problem is compounded for nanomaterials such as CNTs, where homogeneous dispersion (not to mention any form...Microelectronic Engineering 2002, 64, 399–408. 4. Frackowiak, E.; Metenier, K.; Bertagna, V.; Beguin, F. Supercapacitor Electrodes From Multiwalled

Modeling of a Micro-Electronic Mechanical Systems (MEMS) Deformable Mirror for Simulation and Characterization

DTIC Science & Technology

2016-09-01

1  II.  MODEL DESIGN ...Figure 10.  Experimental Optical Layout for the Boston DM Characterization ..........13  Figure 11.  Side View Showing the Curved Surface on a DM...of different methods for deposition, patterning, and etching until the desired design of the device is achieved. While a large number of devices

Radiation Effects: Overview for Space Environment Specialists

NASA Technical Reports Server (NTRS)

Ladbury, Ray

2017-01-01

Radiation Hardness Assurance (RHA) methodologies need to evolve to capitalize on the increased flexibility introduced by new models of space radiation environments. This presentation examines the characteristics of various radiation threats, the sources of error that RHA methodologies seek to control and the contributions of environment models to those errors. The influence of trends in microelectronic device technology is also considered.

2015 Marine Corps Security Environment Forecast: Futures 2030-2045

DTIC Science & Technology

2015-01-01

The technologies that make the iPhone “smart” were publically funded—the Internet, wireless networks, the global positioning system, microelectronics...Energy Revolution (63 percent);  Internet of Things (ubiquitous sensors embedded in interconnected computing devices) (50 percent);  “Sci-Fi...Neuroscience & artificial intelligence - Sensors /control systems -Power & energy -Human-robot interaction Robots/autonomous systems will become part of the

Wide area detection system: Conceptual design study. [using television and microelectronic technology

NASA Technical Reports Server (NTRS)

Hilbert, E. E.; Carl, C.; Goss, W.; Hansen, G. R.; Olsasky, M. J.; Johnston, A. R.

1978-01-01

An integrated sensor for traffic surveillance on mainline sections of urban freeways is described. Applicable imaging and processor technology is surveyed and the functional requirements for the sensors and the conceptual design of the breadboard sensors are given. Parameters measured by the sensors include lane density, speed, and volume. The freeway image is also used for incident diagnosis.

Fixture for mounting small parts for processing

DOEpatents

Foreman, Larry R.; Gomez, Veronica M.; Thomas, Michael H.

1990-01-01

A fixture for mounting small parts, such as fusion target spheres or microelectronic components. A glass stalk is drawn and truncated near its tip. The truncated end of the glass stalk is dipped into silicone rubber forming an extending streamer. After the rubber cures for approximately 24 hours, a small part is touched to the streamer, and will be held securely throughout processing.

Performance of High-Reliability Space-Qualified Processors Implementing Software Defined Radios

DTIC Science & Technology

2014-03-01

ADDRESS(ES) AND ADDRESS(ES) Naval Postgraduate School, Department of Electrical and Computer Engineering, 833 Dyer Road, Monterey, CA 93943-5121 8...Chairman Jeffrey D. Paduan Electrical and Computer Engineering Dean of Research iii THIS PAGE...capability. Radiation in space poses a considerable threat to modern microelectronic devices, in particular to the high-performance low-cost computing

Solution Deposition Methods for Carbon Nanotube Field-Effect Transistors

DTIC Science & Technology

2009-06-01

authorized documents. Citation of manufacturer’s or trade names does not constitute an official endorsement or approval of the use thereof. Destroy...processed into FETs using standard microelectronics processing techniques. The resulting devices were characterized using a semiconductor parameter...method will help to determine which conditions are useful for producing CNT devices for chemical sensing and electronic applications. 15. SUBJECT TERMS

Fundamental Insight on Developing Low Dielectric Constant Polyimides

NASA Technical Reports Server (NTRS)

Simpson, J. O.; SaintClair, A. K.

1997-01-01

Thermally stable, durable, insulative polyimides are in great demand for the fabrication of microelectronic devices. In this investigation dielectric and optical properties have been studied for several series of aromatic polyimides. The effect of polarizability, fluorine content, and free volume on dielectric constant was examined. In general, minimizing polarizability, maximizing free volume and fluorination all lowered dielectric constants in the polyimides studied.

Depositing bulk or micro-scale electrodes

DOEpatents

Shah, Kedar G.; Pannu, Satinderpall S.; Tolosa, Vanessa; Tooker, Angela C.; Sheth, Heeral J.; Felix, Sarah H.; Delima, Terri L.

2016-11-01

Thicker electrodes are provided on microelectronic device using thermo-compression bonding. A thin-film electrical conducting layer forms electrical conduits and bulk depositing provides an electrode layer on the thin-film electrical conducting layer. An insulating polymer layer encapsulates the electrically thin-film electrical conducting layer and the electrode layer. Some of the insulating layer is removed to expose the electrode layer.

JPRS Report, East Europe

DTIC Science & Technology

1988-01-29

Hungarian founders are the Microelectronics Enterprise and the Communications Technology Cooperative. The Soviet founders are the Union of Nauchniy Centr...selection, growing and breeding of new plant and animal species, and the development of manufacturing technology for the food industry. Direct...the reforms our economy still has not undergone a rapid enough technological modernization. We have, for example, failed to make any progress in the

Phenolic dyes as nonbleachable absorbers compatible with novolac resins for linewidth control in photoresists

DOEpatents

Renschler, C.L.

1986-11-25

Photoresist techniques and compositions are provided employing curcumin as an absorptive dye for the purpose of reducing linewidth non-uniformity caused by scattered and reflective light from the substrate-resist interface. The photoresist compositions containing curcumin as the absorptive dye are used in the production of microelectronic circuitry by both single layer and multilayer photoresist techniques.

Microelectronics and Office Jobs. The Impact of the Chip on Women's Employment.

ERIC Educational Resources Information Center

Werneke, Diane

As labor-saving, efficiency-increasing electronic technology is introduced into offices, jobs held by women will change. Although some jobs may be lost, most job loss will be absorbed by attrition and reduction of waste. Fewer new openings may occur in office jobs, however, especially in a recessionary economy. On the other hand, the jobs that are…

The DTIC Review: Volume 3, Number 3. Microtechnologies and Microelectronics

DTIC Science & Technology

1997-09-01

high resolution rnicroanalytical experiments in the martensitic alloys address control of autocatalytic coherent precipitation to achieve efficient...the dependence of hardness at completion of precipitation on alloy carbon content for various particle diameters, including the critical size dc for the...control of microvoid nucleating particle dispersions governing plastic shear localization [22-25], and (b) dispersed- phase transformation toughening by

An Implantable Neural Sensing Microsystem with Fiber-Optic Data Transmission and Power Delivery

PubMed Central

Park, Sunmee; Borton, David A.; Kang, Mingyu; Nurmikko, Arto V.; Song, Yoon-Kyu

2013-01-01

We have developed a prototype cortical neural sensing microsystem for brain implantable neuroengineering applications. Its key feature is that both the transmission of broadband, multichannel neural data and power required for the embedded microelectronics are provided by optical fiber access. The fiber-optic system is aimed at enabling neural recording from rodents and primates by converting cortical signals to a digital stream of infrared light pulses. In the full microsystem whose performance is summarized in this paper, an analog-to-digital converter and a low power digital controller IC have been integrated with a low threshold, semiconductor laser to extract the digitized neural signals optically from the implantable unit. The microsystem also acquires electrical power and synchronization clocks via optical fibers from an external laser by using a highly efficient photovoltaic cell on board. The implantable unit employs a flexible polymer substrate to integrate analog and digital microelectronics and on-chip optoelectronic components, while adapting to the anatomical and physiological constraints of the environment. A low power analog CMOS chip, which includes preamplifier and multiplexing circuitry, is directly flip-chip bonded to the microelectrode array to form the cortical neurosensor device. PMID:23666130

Carbon-ionogel supercapacitors for integrated microelectronics.

PubMed

Leung, Greg; Smith, Leland; Lau, Jonathan; Dunn, Bruce; Chui, Chi On

2016-01-22

To exceed the performance limits of dielectric capacitors in microelectronic circuit applications, we design and demonstrate on-chip coplanar electric double-layer capacitors (EDLCs), or supercapacitors, employing carbon-coated gold electrodes with ionogel electrolyte. The formation of carbon-coated microelectrodes is accomplished by solution processing and results in a ten-fold increase in EDLC capacitance compared to bare gold electrodes without carbon. At frequencies up to 10 Hz, an areal capacitance of 2.1 pF μm(-2) is achieved for coplanar carbon-ionogel EDLCs with 10 μm electrode gaps and 0.14 mm(2) electrode area. Our smallest devices, comprised of 5 μm electrode gaps and 80 μm(2) of active electrode area, reach areal capacitance values of ∼0.3 pF μm(-2) at frequencies up to 1 kHz, even without carbon. To our knowledge, these are the highest reported values to date for on-chip EDLCs with sub-mm(2) areas. A physical EDLC model is developed through the use of computer-aided simulations for design exploration and optimization of coplanar EDLCs. Through modeling and comparison with experimental data, we highlight the importance of reducing the electrode gap and electrolyte resistance to achieve maximum performance from on-chip EDLCs.

Can zinc aluminate-titania composite be an alternative for alumina as microelectronic substrate?

PubMed Central

Roshni, Satheesh Babu; Sebastian, Mailadil Thomas; Surendran, Kuzhichalil Peethambharan

2017-01-01

Alumina, thanks to its superior thermal and dielectric properties, has been the leading substrate over several decades, for power and microelectronics circuits. However, alumina lacks thermal stability since its temperature coefficient of resonant frequency (τf) is far from zero (−60 ppmK−1). The present paper explores the potentiality of a ceramic composite 0.83ZnAl2O4-0.17TiO2 (in moles, abbreviated as ZAT) substrates for electronic applications over other commercially-used alumina-based substrates and synthesized using a non-aqueous tape casting method. The present substrate has τf of + 3.9 ppmK−1 and is a valuable addition to the group of thermo-stable substrates. The ZAT substrate shows a high thermal conductivity of 31.3 Wm−1K−1 (thermal conductivity of alumina is about 24.5 Wm−1K−1), along with promising mechanical, electrical and microwave dielectric properties comparable to that of alumina-based commercial substrates. Furthermore, the newly-developed substrate material shows exceptionally good thermal stability of dielectric constant, which cannot be met with any of the alumina-based HTCC substrates. PMID:28084459

Enabling laser applications in microelectronics manufacturing

NASA Astrophysics Data System (ADS)

Delmdahl, Ralph; Brune, Jan; Fechner, Burkhard; Senczuk, Rolf

2016-02-01

In this experimental study, we report on high-pulse-energy excimer laser drilling into high-performance build-up films which are pivotal in microelectronics manufacturing. Build-up materials ABF-GX13 from Ajinomoto as well as ZS-100 from Zeon Corporation are evaluated with respect to their viability for economic excimer laser-based micro-via formation. Excimer laser mask imaging projection at laser wavelengths of 193, 248 and 308 nm is employed to generate matrices of smaller micro-vias with different diameters and via pitches. High drilling quality is achievable for all excimer laser wavelengths with the fastest ablation rates measured in the case of 248 and 308 nm wavelengths. The presence of glass fillers in build-up films as in the ABF-GX13 material poses some limitations to the minimum achievable via diameter. However, surprisingly good drilling results are obtainable as long as the filler dimensions are well below the diameter of the micro-vias. Sidewall angles of vias are controllable by adjusting the laser energy density and pulse number. In this work, the structuring capabilities of excimer lasers in build-up films as to taper angle variations, attainable via diameters, edge-stop behavior and ablation rates will be elucidated.

The international electronics industry.

PubMed

LaDou, J; Rohm, T

1998-01-01

High-technology microelectronics has a major presence in countries such as China, India, Indonesia, and Malaysia, now the third-largest manufacturer of semiconductor chips. The migration of European, Japanese, and American companies accommodates regional markets. Low wage rates and limited enforcement of environmental regulations in developing countries also serve as incentives for the dramatic global migration of this industry. The manufacture of microelectonics products is accompanied by a high incidence of occupational illnesses, which may reflect the widespread use of toxic materials. Metals, photoactive chemicals, solvents, acids, and toxic gases are used in a wide variety of combinations and workplace settings. The industry also presents problems of radiation exposure and various occupational stressors, including some unresolved ergonomic issues. The fast-paced changes of the technology underlying this industry, as well as the stringent security precautions, have added to the difficulty of instituting proper health and safety measures. Epidemiologic studies reveal an alarming increase in spontaneous abortions among cleanroom manufacturing workers; no definitive study has yet identified its cause. Other health issues, including occupational cancer, are yet to be studied. The microelectronics industry is a good example of an industry that is exported to many areas of the world before health and safety problems are properly addressed and resolved.

Carbon-ionogel supercapacitors for integrated microelectronics

NASA Astrophysics Data System (ADS)

Leung, Greg; Smith, Leland; Lau, Jonathan; Dunn, Bruce; Chui, Chi On

2016-01-01

To exceed the performance limits of dielectric capacitors in microelectronic circuit applications, we design and demonstrate on-chip coplanar electric double-layer capacitors (EDLCs), or supercapacitors, employing carbon-coated gold electrodes with ionogel electrolyte. The formation of carbon-coated microelectrodes is accomplished by solution processing and results in a ten-fold increase in EDLC capacitance compared to bare gold electrodes without carbon. At frequencies up to 10 Hz, an areal capacitance of 2.1 pF μm-2 is achieved for coplanar carbon-ionogel EDLCs with 10 μm electrode gaps and 0.14 mm2 electrode area. Our smallest devices, comprised of 5 μm electrode gaps and 80 μm2 of active electrode area, reach areal capacitance values of ˜0.3 pF μm-2 at frequencies up to 1 kHz, even without carbon. To our knowledge, these are the highest reported values to date for on-chip EDLCs with sub-mm2 areas. A physical EDLC model is developed through the use of computer-aided simulations for design exploration and optimization of coplanar EDLCs. Through modeling and comparison with experimental data, we highlight the importance of reducing the electrode gap and electrolyte resistance to achieve maximum performance from on-chip EDLCs.

The Principle of the Micro-Electronic Neural Bridge and a Prototype System Design.

PubMed

Huang, Zong-Hao; Wang, Zhi-Gong; Lu, Xiao-Ying; Li, Wen-Yuan; Zhou, Yu-Xuan; Shen, Xiao-Yan; Zhao, Xin-Tai

2016-01-01

The micro-electronic neural bridge (MENB) aims to rebuild lost motor function of paralyzed humans by routing movement-related signals from the brain, around the damage part in the spinal cord, to the external effectors. This study focused on the prototype system design of the MENB, including the principle of the MENB, the neural signal detecting circuit and the functional electrical stimulation (FES) circuit design, and the spike detecting and sorting algorithm. In this study, we developed a novel improved amplitude threshold spike detecting method based on variable forward difference threshold for both training and bridging phase. The discrete wavelet transform (DWT), a new level feature coefficient selection method based on Lilliefors test, and the k-means clustering method based on Mahalanobis distance were used for spike sorting. A real-time online spike detecting and sorting algorithm based on DWT and Euclidean distance was also implemented for the bridging phase. Tested by the data sets available at Caltech, in the training phase, the average sensitivity, specificity, and clustering accuracies are 99.43%, 97.83%, and 95.45%, respectively. Validated by the three-fold cross-validation method, the average sensitivity, specificity, and classification accuracy are 99.43%, 97.70%, and 96.46%, respectively.

An optical relay approach to very low cost hybrid polymer-complementary metal-oxide semiconductor electrophoresis instrumentation.

PubMed

Hall, Gordon H; Sloan, David L; Ma, Tianchi; Couse, Madeline H; Martel, Stephane; Elliott, Duncan G; Glerum, D Moira; Backhouse, Christopher J

2014-07-04

Electrophoresis is an integral part of many molecular diagnostics protocols and an inexpensive implementation would greatly facilitate point-of-care (POC) applications. However, the high instrumentation cost presents a substantial barrier, much of it associated with fluorescence detection. The cost of such systems could be substantially reduced by placing the fluidic channel and photodiode directly above the detector in order to collect a larger portion of the fluorescent light. In future, this could be achieved through the integration and monolithic fabrication of photoresist microchannels on complementary metal-oxide semiconductor microelectronics (CMOS). However, the development of such a device is expensive due to high non-recurring engineering costs. To facilitate that development, we present a system that utilises an optical relay to integrate low-cost polymeric microfluidics with a CMOS chip that provides a photodiode, analog-digital conversion and a standard serial communication interface. This system embodies an intermediate level of microelectronic integration, and significantly decreases development costs. With a limit of detection of 1.3±0.4nM of fluorescently end-labeled deoxyribonucleic acid (DNA), it is suitable for diagnostic applications. Copyright © 2014 Elsevier B.V. All rights reserved.

Space Radiation Environment Prediction for VLSI microelectronics devices onboard a LEO Satellite using OMERE-Trad Software

NASA Astrophysics Data System (ADS)

Sajid, Muhammad

This tutorial/survey paper presents the assessment/determination of level of hazard/threat to emerging microelectronics devices in Low Earth Orbit (LEO) space radiation environment with perigee at 300 Km, apogee at 600Km altitude having different orbital inclinations to predict the reliability of onboard Bulk Built-In Current Sensor (BBICS) fabricated in 350nm technology node at OptMA Lab. UFMG Brazil. In this context, the various parameters for space radiation environment have been analyzed to characterize the ionizing radiation environment effects on proposed BBICS. The Space radiation environment has been modeled in the form of particles trapped in Van-Allen radiation belts(RBs), Energetic Solar Particles Events (ESPE) and Galactic Cosmic Rays (GCR) where as its potential effects on Device- Under-Test (DUT) has been predicted in terms of Total Ionizing Dose (TID), Single-Event Effects (SEE) and Displacement Damage Dose (DDD). Finally, the required mitigation techniques including necessary shielding requirements to avoid undesirable effects of radiation environment at device level has been estimated /determined with assumed standard thickness of Aluminum shielding. In order to evaluate space radiation environment and analyze energetic particles effects on BBICS, OMERE toolkit developed by TRAD was utilized.

Australian national networked tele-test facility for integrated systems

NASA Astrophysics Data System (ADS)

Eshraghian, Kamran; Lachowicz, Stefan W.; Eshraghian, Sholeh

2001-11-01

The Australian Commonwealth government recently announced a grant of 4.75 million as part of a 13.5 million program to establish a world class networked IC tele-test facility in Australia. The facility will be based on a state-of-the-art semiconductor tester located at Edith Cowan University in Perth that will operate as a virtual centre spanning Australia. Satellite nodes will be located at the University of Western Australia, Griffith University, Macquarie University, Victoria University and the University of Adelaide. The facility will provide vital equipment to take Australia to the frontier of critically important and expanding fields in microelectronics research and development. The tele-test network will provide state of the art environment for the electronics and microelectronics research and the industry community around Australia to test and prototype Very Large Scale Integrated (VLSI) circuits and other System On a Chip (SOC) devices, prior to moving to the manufacturing stage. Such testing is absolutely essential to ensure that the device performs to specification. This paper presents the current context in which the testing facility is being established, the methodologies behind the integration of design and test strategies and the target shape of the tele-testing Facility.

Direct laser-patterned micro-supercapacitors from paintable MoS2 films.

PubMed

Cao, Liujun; Yang, Shubin; Gao, Wei; Liu, Zheng; Gong, Yongji; Ma, Lulu; Shi, Gang; Lei, Sidong; Zhang, Yunhuai; Zhang, Shengtao; Vajtai, Robert; Ajayan, Pulickel M

2013-09-09

Micrometer-sized electrochemical capacitors have recently attracted attention due to their possible applications in micro-electronic devices. Here, a new approach to large-scale fabrication of high-capacitance, two-dimensional MoS2 film-based micro-supercapacitors is demonstrated via simple and low-cost spray painting of MoS2 nanosheets on Si/SiO2 chip and subsequent laser patterning. The obtained micro-supercapacitors are well defined by ten interdigitated electrodes (five electrodes per polarity) with 4.5 mm length, 820 μm wide for each electrode, 200 μm spacing between two electrodes and the thickness of electrode is ∼0.45 μm. The optimum MoS2 -based micro-supercapacitor exhibits excellent electrochemical performance for energy storage with aqueous electrolytes, with a high area capacitance of 8 mF cm(-2) (volumetric capacitance of 178 F cm(-3) ) and excellent cyclic performance, superior to reported graphene-based micro-supercapacitors. This strategy could provide a good opportunity to develop various micro-/nanosized energy storage devices to satisfy the requirements of portable, flexible, and transparent micro-electronic devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Computation for Electromigration in Interconnects of Microelectronic Devices

NASA Astrophysics Data System (ADS)

Averbuch, Amir; Israeli, Moshe; Ravve, Igor; Yavneh, Irad

2001-03-01

Reliability and performance of microelectronic devices depend to a large extent on the resistance of interconnect lines. Voids and cracks may occur in the interconnects, causing a severe increase in the total resistance and even open circuits. In this work we analyze void motion and evolution due to surface diffusion effects and applied external voltage. The interconnects under consideration are three-dimensional (sandwich) constructs made of a very thin metal film of possibly variable thickness attached to a substrate of nonvanishing conductance. A two-dimensional level set approach was applied to study the dynamics of the moving (assumed one-dimensional) boundary of a void in the metal film. The level set formulation of an electromigration and diffusion model results in a fourth-order nonlinear (two-dimensional) time-dependent PDE. This equation was discretized by finite differences on a regular grid in space and a Runge-Kutta integration scheme in time, and solved simultaneously with a second-order static elliptic PDE describing the electric potential distribution throughout the interconnect line. The well-posed three-dimensional problem for the potential was approximated via singular perturbations, in the limit of small aspect ratio, by a two-dimensional elliptic equation with variable coefficients describing the combined local conductivity of metal and substrate (which is allowed to vary in time and space). The difference scheme for the elliptic PDE was solved by a multigrid technique at each time step. Motion of voids in both weak and strong electric fields was examined, and different initial void configurations were considered, including circles, ellipses, polygons with rounded corners, a butterfly, and long grooves. Analysis of the void behavior and its influence on the resistance gives the circuit designer a tool for choosing the proper parameters of an interconnect (width-to-length ratio, properties of the line material, conductivity of the underlayer, etc.).

Practical Applications of Cosmic Ray Science: Spacecraft, Aircraft, Ground-Based Computation and Control Systems, Exploration, and Human Health and Safety

NASA Technical Reports Server (NTRS)

Koontz, Steve

2015-01-01

In this presentation a review of galactic cosmic ray (GCR) effects on microelectronic systems and human health and safety is given. The methods used to evaluate and mitigate unwanted cosmic ray effects in ground-based, atmospheric flight, and space flight environments are also reviewed. However not all GCR effects are undesirable. We will also briefly review how observation and analysis of GCR interactions with planetary atmospheres and surfaces and reveal important compositional and geophysical data on earth and elsewhere. About 1000 GCR particles enter every square meter of Earth’s upper atmosphere every second, roughly the same number striking every square meter of the International Space Station (ISS) and every other low- Earth orbit spacecraft. GCR particles are high energy ionized atomic nuclei (90% protons, 9% alpha particles, 1% heavier nuclei) traveling very close to the speed of light. The GCR particle flux is even higher in interplanetary space because the geomagnetic field provides some limited magnetic shielding. Collisions of GCR particles with atomic nuclei in planetary atmospheres and/or regolith as well as spacecraft materials produce nuclear reactions and energetic/highly penetrating secondary particle showers. Three twentieth century technology developments have driven an ongoing evolution of basic cosmic ray science into a set of practical engineering tools needed to design, test, and verify the safety and reliability of modern complex technological systems and assess effects on human health and safety effects. The key technology developments are: 1) high altitude commercial and military aircraft; 2) manned and unmanned spacecraft; and 3) increasingly complex and sensitive solid state micro-electronics systems. Space and geophysical exploration needs drove the development of the instruments and analytical tools needed to recover compositional and structural data from GCR induced nuclear reactions and secondary particle showers. Finally, the possible role of GCR secondary particle showers in addressing an important homeland security problem, finding nuclear contraband and weapons, will be briefly reviewed.

Integrated low noise low power interface for neural bio-potentials recording and conditioning

NASA Astrophysics Data System (ADS)

Bottino, Emanuele; Martinoia, Sergio; Valle, Maurizio

2005-06-01

The recent progress in both neurobiology and microelectronics suggests the creation of new, powerful tools to investigate the basic mechanisms of brain functionality. In particular, a lot of efforts are spent by scientific community to define new frameworks devoted to the analysis of in-vitro cultured neurons. One possible approach is recording their spiking activity to monitor the coordinated cellular behaviour and get insights about neural plasticity. Due to the nature of neurons action-potentials, when considering the design of an integrated microelectronic-based recording system, a number of problems arise. First, one would desire to have a high number of recording sites (i.e. several hundreds): this poses constraints on silicon area and power consumption. In this regard, our aim is to integrate-through on-chip post-processing techniques-hundreds of bio-compatible microsensors together with CMOS standard-process low-power (i.e. some tenths of uW per channel) conditioning electronics. Each recording channel is provided with sampling electronics to insure synchronous recording so that, for example, cross-correlation between signals coming from different sites can be performed. Extra-cellular potentials are in the range of [50-150] uV, so a comparison in terms of noise-efficiency was carried out among different architectures and very low-noise pre-amplification electronics (i.e. less than 5 uVrms) was designed. As spikes measurements are made with respect to the voltage of a reference electrode, we opted for an AC-coupled differential-input preamplifier provided with band-pass filtering capability. To achieve this, we implemented large time-constant (up to seconds) integrated components in the preamp feedback path. Thus, we got rid also of random slow-drifting DC-offsets and common mode signals. The paper will present our achievements in the design and implementation of a fully integrated bio-abio interface to record neural spiking activity. In particular, preliminary results will be reported.

Thermodynamic analysis of solid-fuel mixtures glycidyl azide polymer (GAP)/RDX for miniengines of microelectromechanical systems

NASA Astrophysics Data System (ADS)

Fut'ko, S. I.; Ermolaeva, E. M.; Dobrego, K. V.; Bondarenko, V. P.; Dolgii, L. N.

2011-09-01

On the basis of thermodynamic calculations we show that solid-fuel mixtures glycidyl azide polymer/RDX are promising for use in miniengines made on the basis of technologies of microelectromechanical systems of semiconductor microelectronics. It has been shown that small (up to 20 mass percent) additives of RDX to the glycidyl azide polymer markedly increase the values of the theoretical specific impulse and the thermal efficiency of the engine and decrease the quantity of undesirable solid carbon formed in combustion products of the mixed fuel. In so doing, these mixtures provide fairly low combustion temperatures not exceeding the thermostability limit of crystal silicon from which the miniengine case is made. The physicochemical factors influencing the value of the theoretical specific impulse of the mixed solid-fuel charge have been elucidated, and methods for its maximization have been proposed.

Decapsulation Method for Flip Chips with Ceramics in Microelectronic Packaging

NASA Astrophysics Data System (ADS)

Shih, T. I.; Duh, J. G.

2008-06-01

The decapsulation of flip chips bonded to ceramic substrates is a challenging task in the packaging industry owing to the vulnerability of the chip surface during the process. In conventional methods, such as manual grinding and polishing, the solder bumps are easily damaged during the removal of underfill, and the thin chip may even be crushed due to mechanical stress. An efficient and reliable decapsulation method consisting of thermal and chemical processes was developed in this study. The surface quality of chips after solder removal is satisfactory for the existing solder rework procedure as well as for die-level failure analysis. The innovative processes included heat-sink and ceramic substrate removal, solder bump separation, and solder residue cleaning from the chip surface. In the last stage, particular temperatures were selected for the removal of eutectic Pb-Sn, high-lead, and lead-free solders considering their respective melting points.

Classifying the Basic Parameters of Ultraviolet Copper Bromide Laser

NASA Astrophysics Data System (ADS)

Gocheva-Ilieva, S. G.; Iliev, I. P.; Temelkov, K. A.; Vuchkov, N. K.; Sabotinov, N. V.

2009-10-01

The performance of deep ultraviolet copper bromide lasers is of great importance because of their applications in medicine, microbiology, high-precision processing of new materials, high-resolution laser lithography in microelectronics, high-density optical recording of information, laser-induced fluorescence in plasma and wide-gap semiconductors and more. In this paper we present a statistical study on the classification of 12 basic lasing parameters, by using different agglomerative methods of cluster analysis. The results are based on a big amount of experimental data for UV Cu+ Ne-CuBr laser with wavelengths 248.6 nm, 252.9 nm, 260.0 nm and 270.3 nm, obtained in Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences. The relevant influence of parameters on laser generation is also evaluated. The results are applicable in computer modeling and planning the experiments and further laser development with improved output characteristics.

Update on NASA Microelectronics Activities

NASA Technical Reports Server (NTRS)

Label, Kenneth A.; Sampson, Michael J.; Casey, Megan; Lauenstein, Jean-Marie

2017-01-01

Mission Statement: The NASA Electronic Parts and Packaging (NEPP) Program provides NASA's leadership for developing and maintaining guidance for the screening, qualification, test. and usage of EEE parts by NASA as well as in collaboration with other government Agencies and industry. NASA Space Technology Mission Directorate (STMD) "STMD rapidly develops, demonstrates, and infuses revolutionary, high-payoff technologies through transparent, collaborative partnerships, expanding the boundaries of the aerospace enterprise." Mission Statement: The Space Environments Testing Management Office (SETMO) will identify, prioritize, and manage a select suite of Agency key capabilities/assets that are deemed to be essential to the future needs of NASA or the nation, including some capabilities that lack an adequate business base over the budget horizon. NESC mission is to perform value-added independent testing, analysis, and assessments of NASA's high-risk projects to ensure safety and mission success. NASA Space Environments and Avionics Fellows as well as Radiation and EEE Parts Community of Practice (CoP) leads.

Electrostatic capacitance and Faraday cage behavior of carbon nanotube forests

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ya'akobovitz, A.; Department of Mechanical Engineering, Faculty of Engineering Sciences, Ben-Gurion University, Beer-Sheva; Bedewy, M.

2015-02-02

Understanding of the electrostatic properties of carbon nanotube (CNT) forests is essential to enable their integration in microelectronic and micromechanical devices. In this study, we sought to understand how the hierarchical geometry and morphology of CNT forests determines their capacitance. First, we find that at small gaps, solid micropillars have greater capacitance, yet at larger gaps the capacitance of the CNT forests is greater. The surface area of the CNT forest accessible to the electrostatic field was extracted by analysis of the measured capacitance, and, by relating the capacitance to the average density of CNTs in the forest, we findmore » that the penetration depth of the electrostatic field is on the order of several microns. Therefore, CNT forests can behave as a miniature Faraday cage. The unique electrostatic properties of CNT forests could therefore enable their use as long-range proximity sensors and as shielding elements for miniature electronic devices.« less

Electrostatic capacitance and Faraday cage behavior of carbon nanotube forests

NASA Astrophysics Data System (ADS)

Ya'akobovitz, A.; Bedewy, M.; Hart, A. J.

2015-02-01

Understanding of the electrostatic properties of carbon nanotube (CNT) forests is essential to enable their integration in microelectronic and micromechanical devices. In this study, we sought to understand how the hierarchical geometry and morphology of CNT forests determines their capacitance. First, we find that at small gaps, solid micropillars have greater capacitance, yet at larger gaps the capacitance of the CNT forests is greater. The surface area of the CNT forest accessible to the electrostatic field was extracted by analysis of the measured capacitance, and, by relating the capacitance to the average density of CNTs in the forest, we find that the penetration depth of the electrostatic field is on the order of several microns. Therefore, CNT forests can behave as a miniature Faraday cage. The unique electrostatic properties of CNT forests could therefore enable their use as long-range proximity sensors and as shielding elements for miniature electronic devices.

A Distributed Amplifier System for Bilayer Lipid Membrane (BLM) Arrays With Noise and Individual Offset Cancellation.

PubMed

Crescentini, Marco; Thei, Frederico; Bennati, Marco; Saha, Shimul; de Planque, Maurits R R; Morgan, Hywel; Tartagni, Marco

2015-06-01

Lipid bilayer membrane (BLM) arrays are required for high throughput analysis, for example drug screening or advanced DNA sequencing. Complex microfluidic devices are being developed but these are restricted in terms of array size and structure or have integrated electronic sensing with limited noise performance. We present a compact and scalable multichannel electrophysiology platform based on a hybrid approach that combines integrated state-of-the-art microelectronics with low-cost disposable fluidics providing a platform for high-quality parallel single ion channel recording. Specifically, we have developed a new integrated circuit amplifier based on a novel noise cancellation scheme that eliminates flicker noise derived from devices under test and amplifiers. The system is demonstrated through the simultaneous recording of ion channel activity from eight bilayer membranes. The platform is scalable and could be extended to much larger array sizes, limited only by electronic data decimation and communication capabilities.

Quality control in the year 2000.

PubMed

Schade, B

1992-01-01

'Just-in-time' production is a prerequisite for a company to meet the challenges of competition. Manufacturing cycles have been so successfully optimized that release time now has become a significant factor. A vision for a major quality-control (QC) contribution to profitability in this decade seems to be the just-in-time release. Benefits will go beyond cost savings for lower inventory. The earlier detection of problems will reduce rejections and scrap. In addition, problem analysis and problem-solving will be easier. To achieve just-in-time release, advanced automated systems like robots will become the workhorses in QC for high volume pharmaceutical production. The requirements for these systems are extremely high in terms of quality, reliability and ruggedness. Crucial for the success might be advances in use of microelectronics for error checks, system recording, trouble shooting, etc. as well as creative new approaches (for example the use of redundant assay systems).

Quality control in the year 2000

PubMed Central

Schade, Bernd

1992-01-01

‘Just-in-time’ production is a prerequisite for a company to meet the challenges of competition. Manufacturing cycles have been so successfully optimized that release time now has become a significant factor. A vision for a major quality-control (QC) contribution to profitability in this decade seems to be the just-in-time release. Benefits will go beyond cost savings for lower inventory. The earlier detection of problems will reduce rejections and scrap. In addition, problem analysis and problem-solving will be easier. To achieve just-in-time release, advanced automated systems like robots will become the workhorses in QC for high volume pharmaceutical production. The requirements for these systems are extremely high in terms of quality, reliability and ruggedness. Crucial for the success might be advances in use of microelectronics for error checks, system recording, trouble shooting, etc. as well as creative new approaches (for example the use of redundant assay systems). PMID:18924930

Design and analysis of a high Q MEMS passive RF filter

NASA Astrophysics Data System (ADS)

Rathee, Vishal; Pande, Rajesh

2016-04-01

Over the past few years, significant growth has been observed in using MEMS based passive components in the RF microelectronics domain, especially in transceiver system. This is due to some excellent properties of the MEMS devices like low loss, low cost and excellent isolation. This paper presents a design of high performance MEMS passive band pass filter, consisting of L and C with improved quality factor and insertion loss less than the reported filters. In this paper we have presented a design of 2nd order band pass filter with 2.4GHz centre frequency and 83MHz bandwidth for Bluetooth application. The simulation results showed improved Q-factor of 34 and Insertion loss of 1.7dB to 1.9dB. The simulation results needs to be validated by fabricating the device, fabrication flow of which is also presented in the paper.

Hard X-ray Microscopy with sub 30 nm Spatial Resolution

NASA Astrophysics Data System (ADS)

Tang, Mau-Tsu; Song, Yen-Fang; Yin, Gung-Chian; Chen, Fu-Rong; Chen, Jian-Hua; Chen, Yi-Ming; Liang, Keng S.; Duewer, F.; Yun, Wenbing

2007-01-01

A transmission X-ray microscope (TXM) has been installed at the BL01B beamline at National Synchrotron Radiation Research Center in Taiwan. This state-of-the-art TXM operational in a range 8-11 keV provides 2D images and 3D tomography with spatial resolution 60 nm, and with the Zernike-phase contrast mode for imaging light materials such as biological specimens. A spatial resolution of the TXM better than 30 nm, apparently the best result in hard X-ray microscopy, has been achieved by employing the third diffraction order of the objective zone plate. The TXM has been applied in diverse research fields, including analysis of failure mechanisms in microelectronic devices, tomographic structures of naturally grown photonic specimens, and the internal structure of fault zone gouges from an earthquake core. Here we discuss the scope and prospects of the project, and the progress of the TXM in NSRRC.

Structural, mechanical and magnetic study on galvanostatic electroplated nanocrystalline NiFeP thin films

NASA Astrophysics Data System (ADS)

Kalaivani, A.; Senguttuvan, G.; Kannan, R.

2018-03-01

Nickel based alloys has a huge applications in microelectronics and micro electromechanical systems owing to its superior soft magnetic properties. With the advantages of simplicity, cost-effectiveness and controllable patterning, electroplating processes has been chosen to fabricate thin films in our work. The soft magnetic NiFeP thin film was successfully deposited over the surface of copper plate through galvanostatic electroplating method by applying constant current density of 10 mA cm-2 for a deposition rate for half an hour. The properties of the deposited NiFeP thin films were analyzed by subjecting it into different physio-chemical characterization such as XRD, SEM, EDAX, AFM and VSM. XRD pattern confirms the formation of NiFeP particles and the structural analysis reveals that the NiFeP particles were uniformly deposited over the surface of copper substrate. The surface roughness analysis of the NiFeP films was done using AFM analysis. The magnetic studies and the hardness of the thin film were evaluated from the VSM and hardness test. The NiFeP thin films possess lower coercivity with higher magnetization value of 69. 36 × 10-3 and 431.92 Gauss.

Microelectronic Stimulator Array

DTIC Science & Technology

2000-08-09

narrow, flexible micro-cable 36. The micro-cable 36 is approximately six inches in length and is custom made using gold leads patterned on polyimide ...neural prosthesis device is biocompatibility and safety. Because the duration of any tests with the retinal prosthesis test device 30 are very short...less than an hour), biocompatibility issues are primarily reduced to acute effects of the testing and need not address the more difficult chronic

Concurrent Estimation of Time-to-Failure and Effective Wear

DTIC Science & Technology

2003-05-01

decrease 4 scans 0 2000 4000 6000 8000 10000 0 20 60 N o. o f A rc s scans 0 2000 4000 6000 8000 10000 -1 1 2 3 4 R es id ua l Figure 2: Actual (black...Maintenance Using Neural Networks”, Journal of Microelectronic Systems Integration, 4(2):87–93, 1996. [2] T. Petsche, A. Marcantonio , C. Darken, S. Hanson, G

JPRS Report, Science & Technology, Europe

DTIC Science & Technology

1991-08-13

Integrate Former Dresden Microelectronics Center [Duesseldorf VDI NACHRICHTEN, 23 Aug 91] 35 Switzerland’s Contraves To Increase Thin-Film... drugs on the mem- brane systems of living cells will be the first application. Microtest systems of this type can be utilized in phar- macy for...other drugs affecting the membrane, and to their effects on the cellular system. German Research Ministry Funds Biosensor Project 91MI0556 Bonn