Radiation Effects and Hardening Techniques for Spacecraft Microelectronics

NASA Astrophysics Data System (ADS)

Gambles, J. W.; Maki, G. K.

2002-01-01

The natural radiation from the Van Allen belts, solar flares, and cosmic rays found outside of the protection of the earth's atmosphere can produce deleterious effects on microelectronics used in space systems. Historically civil space agencies and the commercial satellite industry have been able to utilize components produced in special radiation hardened fabrication process foundries that were developed during the 1970s and 1980s under sponsorship of the Departments of Defense (DoD) and Energy (DoE). In the post--cold war world the DoD and DoE push to advance the rad--hard processes has waned. Today the available rad--hard components lag two-plus technology node generations behind state- of-the-art commercial technologies. As a result space craft designers face a large performance gap when trying to utilize available rad--hard components. Compounding the performance gap problems, rad--hard components are becoming increasingly harder to get. Faced with the economic pitfalls associated with low demand versus the ever increasing investment required for integrated circuit manufacturing equipment most sources of rad--hard parts have simply exited this market in recent years, leaving only two domestic US suppliers of digital rad--hard components. This paper summarizes the radiation induced mechanisms that can cause digital microelectronics to fail in space, techniques that can be applied to mitigate these failure mechanisms, and ground based testing used to validate radiation hardness/tolerance. The radiation hardening techniques can be broken down into two classes, Hardness By Process (HBP) and Hardness By Design (HBD). Fortunately many HBD techniques can be applied to commercial fabrication processes providing space craft designer with radiation tolerant Application Specific Integrated Circuits (ASICs) that can bridge the performance gap between the special HBP foundries and the commercial state-of-the-art performance.

Ultralow-Loss CMOS Copper Plasmonic Waveguides.

PubMed

Fedyanin, Dmitry Yu; Yakubovsky, Dmitry I; Kirtaev, Roman V; Volkov, Valentyn S

2016-01-13

Surface plasmon polaritons can give a unique opportunity to manipulate light at a scale well below the diffraction limit reducing the size of optical components down to that of nanoelectronic circuits. At the same time, plasmonics is mostly based on noble metals, which are not compatible with microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which can outperform gold plasmonic waveguides simultaneously providing long (>40 μm) propagation length and deep subwavelength (∼λ(2)/50, where λ is the free-space wavelength) mode confinement in the telecommunication spectral range. These results create the backbone for the development of a CMOS plasmonic platform and its integration in future electronic chips.

Hydrogen ion microlithography

DOEpatents

Tsuo, Y.S.; Deb, S.K.

1990-10-02

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing. 6 figs.

PREFACE: The Second Conference on Microelectronics, Microsystems and Nanotechnology

NASA Astrophysics Data System (ADS)

Nassiopoulou, Androula G.; Papanikolaou, Nikos; Tsamis, Christos

2005-01-01

The Second Conference on Microelectronics, Microsystems and Nanotechnology took place at the National Centre for Scientific Research `Demokritos', in Athens, Greece, between 14 and 17 November 2004. The conference was organized by the Institute of Microelectronics (IMEL) with the aim to bring together scientists and engineers working in the above exciting fields in an interactive forum. The conference included 45 oral presentations with 9 invited papers and was attended by 146 participants from 16 countries. The topics covered were nanotechnologies, quantum devices, sensors, micro- and nano-systems, semiconductor devices, C-MOS fabrication and characterization techniques, new materials, and IC design. Quantum devices and nanostructured materials attracted considerable attention. Both theoretical and experimental studies of metallic and semiconducting quantum systems were presented, with emphasis on their applications in electronics, optoelectronics, and nanocrystal memory devices. Another exciting topic was the recent developments in biocompatible lithographic processes for applications in biosensors. In particular novel processes for bio-friendly lithography, together with innovations in Si sensors for applications in medicine and food industry were presented. Recent developments and perspectives in CMOS technology towards the ultimate limit were also discussed. The conference covered issues and concepts of IC design with two invited talks on RF design and cryptography.The conference included presentations from several companies active in the field of microelectronics and systems in Greece.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Albert G. Baca; Edwin J. Heller; Gregory C. Frye-Mason

High sensitivity acoustic wave chemical microsensors are being developed on GaAs substrates. These devices take advantage of the piezoelectric properties of GaAs as well as its mature microelectronics fabrication technology and nascent micromachining technology. The design, fabrication, and response of GaAs SAW chemical microsensors are reported. Functional integrated GaAs SAW oscillators, suitable for chemical sensing, have been produced. The integrated oscillator requires 20 mA at 3 VK, operates at frequencies up to 500 MHz, and occupies approximately 2 mmz. Discrete GaAs sensor components, including IC amplifiers, SAW delay lines, and IC phase comparators have been fabricated and tested. A temperaturemore » compensation scheme has been developed that overcomes the large temperature dependence of GaAs acoustic wave devices. Packaging issues related to bonding miniature flow channels directly to the GaAs substrates have been resolved. Micromachining techniques for fabricating FPW and TSM microsensors on thin GaAs membranes are presented and GaAs FPW delay line performance is described. These devices have potentially higher sensitivity than existing GaAs and quartz SAW sensors.« less

Bringing order to the world of nanowire devices by phase shift lithography.

PubMed

Subannajui, Kittitat; Güder, Firat; Zacharias, Margit

2011-09-14

Semiconductor nanowire devices have several properties which match future requirements of scaling down the size of electronics. In typical microelectronics production, a number of microstructures are aligned precisely on top of each other during the fabrication process. In the case of nanowires, this mandatory condition is still hard to achieve. A technological breakthrough is needed to accurately place nanowires at any specific position and then form devices in mass production. In this article, an upscalable process combining conventional micromachining with phase shift lithography will be demonstrated as a suitable tool for nanowire device technology. Vertical Si and ZnO nanowires are demonstrated on very large (several cm(2)) areas. We demonstrate how the nanowire positions can be controlled, and the resulting nanowires are used for device fabrication. As an example Si/ZnO heterojunction diode arrays are fabricated. The electrical characterization of the produced devices has also been performed to confirm the functionality of the fabricated diodes.

Laser-machined piezoelectric cantilevers for mechanical energy harvesting.

PubMed

Kim, HyunUk; Bedekar, Vishwas; Islam, Rashed Adnan; Lee, Woo-Ho; Leo, Don; Priya, Shashank

2008-09-01

In this study, we report results on a piezoelectric- material-based mechanical energy-harvesting device that was fabricated by combining laser machining with microelectronics packaging technology. It was found that the laser-machining process did not have significant effect on the electrical properties of piezoelectric material. The fabricated device was tested in the low-frequency regime of 50 to 1000 Hz at constant force of 8 g (where g = 9.8 m/s(2)). The device was found to generate continuous power of 1.13 microW at 870 Hz across a 288.5 kOmega load with a power density of 301.3 microW/cm(3).

Future of the Particle Replication in Nonwetting Templates (PRINT) Technology

PubMed Central

Xu, Jing; Wong, Dominica H. C.; Byrne, James D.; Chen, Kai; Bowerman, Charles

2014-01-01

Particle replication in nonwetting templates (PRINT) is a continuous, roll-to-roll, high-resolution molding technology which allows the design and synthesis of precisely defined micro- and nanoparticles. This technology adapts the lithographic techniques from the microelectronics industry and marries these with the roll-to-roll processes from the photographic film industry to enable researchers to have unprecedented control over particle size, shape, chemical composition, cargo, modulus, and surface properties. In addition, PRINT is a GMP-compliant (GMP = good manufacturing practice) platform amenable for particle fabrication on a large scale. Herein, we describe some of our most recent work involving the PRINT technology for application in the biomedical and material sciences. PMID:23670869

Center for Space Microelectronics Technology. 1993 Technical Report

NASA Technical Reports Server (NTRS)

1995-01-01

The 1993 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 170 publications, 193 presentations, and 84 New Technology Reports and patents. The 1993 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 170 publications, 193 presentations, and 84 New Technology Reports and patents.

Method of fabricating a microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2003-01-01

A method of fabricating a microelectronic device package with an integral window for providing optical access through an aperture in the package. The package is made of a multilayered insulating material, e.g., a low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC). The window is inserted in-between personalized layers of ceramic green tape during stackup and registration. Then, during baking and firing, the integral window is simultaneously bonded to the sintered ceramic layers of the densified package. Next, the microelectronic device is flip-chip bonded to cofired thick-film metallized traces on the package, where the light-sensitive side is optically accessible through the window. Finally, a cover lid is attached to the opposite side of the package. The result is a compact, low-profile package, flip-chip bonded, hermetically-sealed package having an integral window.

Silicon based nanogap device for studying electrical transport phenomena in molecule-nanoparticle hybrids.

PubMed

Strobel, Sebastian; Hernández, Rocío Murcia; Hansen, Allan G; Tornow, Marc

2008-09-17

We report the fabrication and characterization of vertical nanogap electrode devices using silicon-on-insulator substrates. Using only standard silicon microelectronic process technology, nanogaps down to 26 nm electrode separation were prepared. Transmission electron microscopy cross-sectional analysis revealed the well defined material architecture of the nanogap, comprising two electrodes of dissimilar geometrical shape. This asymmetry is directly reflected in transport measurements on molecule-nanoparticle hybrid systems formed by self-assembling a monolayer of mercaptohexanol on the electrode surface and the subsequent dielectrophoretic trapping of 30 nm diameter Au nanoparticles. The observed Coulomb staircase I-V characteristic measured at T = 4.2 K is in excellent agreement with theoretical modelling, whereby junction capacitances of the order of a few 10(-18) farad and asymmetric resistances of 30 and 300 MΩ, respectively, are also supported well by our independent estimates for the formed double barrier tunnelling system. We propose our nanoelectrode system for integrating novel functional electronic devices such as molecular junctions or nanoparticle hybrids into existing silicon microelectronic process technology.

REVIEW ARTICLE: How will physics be involved in silicon microelectronics

NASA Astrophysics Data System (ADS)

Kamarinos, Georges; Felix, Pierre

1996-03-01

By the year 2000 electronics will probably be the basis of the largest industry in the world. Silicon microelectronics will continue to keep a dominant place covering 99% of the `semiconductor market'. The aim of this review article is to indicate for the next decade the domains in which research work in `physics' is needed for a technological advance towards increasing speed, complexity and density of silicon ultra large scale integration (ULSI) integrated circuits (ICs). By `physics' we mean here not only condensed matter physics but also the basic physical chemistry and thermodynamics. The review begins with a brief and general introduction in which we elucidate the current state of the art and the trends in silicon microelectronics. Afterwards we examine the involvement of physics in silicon microelectronics in the two main sections. The first section concerns the processes of fabrication of ICs: lithography, oxidation, diffusion, chemical and physical vapour deposition, rapid thermal processing, etching, interconnections, ultra-clean processing and microcontamination. The second section concerns the electrical operation of the ULSI devices. It defines the integration scales and points out the importance of the intermediate scale of integration which is the scale of the next generation of ICs. The emergence of cryomicroelectronics is also reviewed and an extended paragraph is dedicated to the problem of reliability and ageing of devices and ICs: hot carrier degradation, interdevice coupling and noise are considered. It is shown, during our analysis, that the next generation of silicon ICs needs mainly: (i) `scientific' fabrication and (ii) microscopic modelling and simulation of the electrical characteristics of the scaled down devices. To attain the above objectives a return to the `first principles' of physics as well as a recourse to nonlinear and non-equilibrium thermodynamics are mandatory. In the references we list numerous review papers and references of specialized colloquia proceedings so that a more detailed survey of the subject is possible for the reader.

Future of the particle replication in nonwetting templates (PRINT) technology.

PubMed

Xu, Jing; Wong, Dominica H C; Byrne, James D; Chen, Kai; Bowerman, Charles; DeSimone, Joseph M

2013-06-24

Particle replication in nonwetting templates (PRINT) is a continuous, roll-to-roll, high-resolution molding technology which allows the design and synthesis of precisely defined micro- and nanoparticles. This technology adapts the lithographic techniques from the microelectronics industry and marries these with the roll-to-roll processes from the photographic film industry to enable researchers to have unprecedented control over particle size, shape, chemical composition, cargo, modulus, and surface properties. In addition, PRINT is a GMP-compliant (GMP=good manufacturing practice) platform amenable for particle fabrication on a large scale. Herein, we describe some of our most recent work involving the PRINT technology for application in the biomedical and material sciences. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Center for Space Microelectronics Technology 1988-1989 technical report

NASA Technical Reports Server (NTRS)

Olsen, Peggy

1990-01-01

The 1988 to 1989 Technical Report of the JPL Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center. Listed are 321 publications, 282 presentations, and 140 new technology reports and patents.

Center for Space Microelectronics Technology

NASA Technical Reports Server (NTRS)

1991-01-01

The 1990 technical report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center during 1990. The report lists 130 publications, 226 presentations, and 87 new technology reports and patents.

Center for Space Microelectronics Technology

NASA Technical Reports Server (NTRS)

1992-01-01

The 1991 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 193 publications, 211 presentations, and 125 new technology reports and patents.

Advanced Microelectronics and Materials Programs

DTIC Science & Technology

1991-12-01

of SiC /Si 3N 4 ceramic upon pyrolysis . This material was used to produce adherent coatings on a variety of substrates, and also infiltration ...the areas of Fiber Fabrication, Coatings and Infiltration , Composite Fabrication, and Physical/Mechanical Properties. Significant accomplishments...projects in the areas of Fiber Fabrication, Coatings and Infiltration , Composite Fabrication, and Physical/Mechanical Properties. Significant

Integrated electronics and fluidic MEMS for bioengineering

NASA Astrophysics Data System (ADS)

Fok, Ho Him Raymond

Microelectromechanical systems (MEMS) and microelectronics have become enabling technologies for many research areas. This dissertation presents the use of fluidic MEMS and microelectronics for bioengineering applications. In particular, the versatility of MEMS and microelectronics is highlighted by the presentation of two different applications, one for in-vitro study of nano-scale dynamics during cell division and one for in-vivo monitoring of biological activities at the cellular level. The first application of an integrated system discussed in this dissertation is to utilize fluidic MEMS for studying dynamics in the mitotic spindle, which could lead to better chemotherapeutic treatments for cancer patients. Previous work has developed the use of electrokinetic phenomena on the surface of a glass-based platform to assemble microtubules, the building blocks of mitotic spindles. Nevertheless, there are two important limitations of this type of platform. First, an unconventional microfabrication process is necessary for the glass-based platform, which limits the utility of this platform. In order to overcome this limitation, in this dissertation a convenient microfluidic system is fabricated using a negative photoresist called SU-8. The fabrication process for the SU-8-based system is compatible with other fabrication techniques used in developing microelectronics, and this compatibility is essential for integrating electronics for studying dynamics in the mitotic spindle. The second limitation of the previously-developed glass-based platform is its lack of bio-compatibility. For example, microtubules strongly interact with the surface of the glass-based platform, thereby hindering the study of dynamics in the mitotic spindle. This dissertation presents a novel approach for assembling microtubules away from the surface of the platform, and a fabrication process is developed to assemble microtubules between two self-aligned thin film electrodes on thick SU-8 pedestals. This approach also allows the in-vitro model to mimic the three-dimensionality of the cellular mitotic spindle that is absent in previous work. The second application of an integrated bioengineering system discussed in this dissertation is to design and fabricate active electronics and sensors for an in-vivo application to monitor neural activity at the cellular level. Temperature sensors were chosen for a first demonstration. In order for temperature sensors to be able to be implanted into brain interfaces, it is necessary for these devices to be fabricated using processes that are compatible with bio-compatible substrates such as glass and plastic. This dissertation addresses this challenge by developing temperature sensors integrated with biasing circuitry using zinc oxide thin film transistors (TFTs) fabricated on polyimide substrates. The integrated sensors show good temperature sensitivity, which is critical for monitoring neural temperature at the cellular level. This dissertation also describes the unique requirements of encapsulating implantable electronics. For instance, encapsulation schemes must be designed in such a way that they both protect electronic devices from extracellular fluids and also do not interfere with the functionality of these devices. In this work, SU-8 is used as a convenient and effective encapsulation layer. Thermal engineering to prevent active electronics from overheating and to ensure accurate temperature measurement from temperature sensors is also discussed, and a synergistic encapsulation and thermal engineering combination is presented.

High surface area silicon materials: fundamentals and new technology.

PubMed

Buriak, Jillian M

2006-01-15

Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

The Legacy of the Microelectronics Education Programme.

ERIC Educational Resources Information Center

Thorne, Michael

1987-01-01

Describes the Microelectronics Education Programme (MEP), a plan developed to help British secondary school students learn about microcomputers and the role of technology in society, and its successor, the Microelectronics Support Unit (MESU). Highlights include curriculum development, teacher training, computer assisted instruction and the…

Educational Implications of Microelectronics and Microprocessors.

ERIC Educational Resources Information Center

Harris, N. D. C., Ed.

This conference report explores microelectronic technology, its effect on educational methods and objectives, and its implications for educator responsibilities. Two main areas were considered: the significance of the likely impact of the large scale introduction of microprocessors and microelectronics on commercial and industrial processes, the…

Center for space microelectronics technology

NASA Technical Reports Server (NTRS)

1993-01-01

The 1992 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center during the past year. The report lists 187 publications, 253 presentations, and 111 new technology reports and patents in the areas of solid-state devices, photonics, advanced computing, and custom microcircuits.

Dry etching of metallization

NASA Technical Reports Server (NTRS)

Bollinger, D.

1983-01-01

The production dry etch processes are reviewed from the perspective of microelectronic fabrication applications. The major dry etch processes used in the fabrication of microelectronic devices can be divided into two categories - plasma processes in which samples are directly exposed to an electrical discharge, and ion beam processes in which samples are etched by a beam of ions extracted from a discharge. The plasma etch processes can be distinguished by the degree to which ion bombardment contributes to the etch process. This, in turn is related to capability for anisotropic etching. Reactive Ion Etching (RIE) and Ion Beam Etching are of most interest for etching of thin film metals. RIE is generally considered the best process for large volume, anisotropic aluminum etching.

CVD diamond substrate for microelectronics. Final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burden, J.; Gat, R.

1996-11-01

Chemical Vapor Deposition (CVD) of diamond films has evolved dramatically in recent years, and commercial opportunities for diamond substrates in thermal management applications are promising. The objective of this technology transfer initiative (TTI) is for Applied Science and Technology, Inc. (ASTEX) and AlliedSignal Federal Manufacturing and Technologies (FM&T) to jointly develop and document the manufacturing processes and procedures required for the fabrication of multichip module circuits using CVD diamond substrates, with the major emphasis of the project concentrating on lapping/polishing prior to metallization. ASTEX would provide diamond films for the study, and FM&T would use its experience in lapping, polishing,more » and substrate metallization to perform secondary processing on the parts. The primary goal of the project was to establish manufacturing processes that lower the manufacturing cost sufficiently to enable broad commercialization of the technology.« less

Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers

NASA Astrophysics Data System (ADS)

Li, Shuxia; Tarr, N. Garry; Ye, Winnie N.

2018-02-01

In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.

Development of components for an S-band phased array antenna subsystem

NASA Technical Reports Server (NTRS)

1975-01-01

The system requirements, module test data, and S-band phased array subsystem test data are discussed. Of the two approaches to achieving antenna gain (mechanically steered reflector or electronically steered phased array), the phased array approach offers the greatest simplicity and lowest cost (size, weight, power, and dollars) for this medium gain. A competitive system design is described as well as hardware evaluation which will lead to timely availability of this technology for implementing such a system. The objectives of the study were: to fabricate and test six engineering model transmit/receive microelectronics modules; to design, fabricate, and test one dc and logic multilayer manifold; and to integrate and test an S-band phased array antenna subsystem composed of antenna elements, seven T/R modules, RF manifolds and dc manifold.

High-voltage solar-cell chip

NASA Technical Reports Server (NTRS)

Kapoor, V. J.; Valco, G. J.; Skebe, G. G.; Evans, J. C., Jr.

1985-01-01

Integrated circuit technology has been successfully applied to the design and fabrication of 0.5 x 0.5-cm planar multijunction solar-cell chips. Each of these solar cells consisted of six voltage-generating unit cells monolithically connected in series and fabricated on a 75-micron-thick, p-type, single crystal, silicon substrate. A contact photolithic process employing five photomask levels together with a standard microelectronics batch-processing technique were used to construct the solar-cell chip. The open-circuit voltage increased rapidly with increasing illumination up to 5 AM1 suns where it began to saturate at the sum of the individual unit-cell voltages at a maximum of 3.0 V. A short-circuit current density per unit cell of 240 mA/sq cm was observed at 10 AM1 suns.

Microelectronics in the Curriculum--The Science Teacher's Contribution.

ERIC Educational Resources Information Center

Association for Science Education, Cambridge (England).

Rapid advances in microelectronics over the past few years have generally been beneficial, but they have also created some problems, and questions must be asked about the philosophy for including aspects of the new technology in the school curriculum. This statement, prepared by the Microelectronics and Science Education Subcommittee of the…

Laser alchemy: direct writing of multifunctional components in a glass chip with femtosecond laser pulses

NASA Astrophysics Data System (ADS)

Liao, Yang; Lin, Jintian; Cheng, Ya

2013-12-01

Recently, hybrid integration of multifunctional micro-components for creating complex, intelligent micro/nano systems has attracted significant attention. These micro-/nano-systems have important applications in a variety of areas, such as healthcare, environment, communication, national security, and so on. However, fabrication of micro/nano systems incorporated with different functions is still a challenging task, which generally requires fabrication of discrete microcomponents beforehand followed by assembly and packaging procedures. Furthermore, current micro-/nano-fabrication techniques are mainly based on the well-established planar lithographic approach, which suffer from severe issues in producing three dimensional (3D) structures with complex geometries and arbitrary configurations. In recent years, the rapid development of femtosecond laser machining technology has enabled 3D direct fabrication and integration of multifunctional components, such as microfluidics, microoptics, micromechanics, microelectronics, etc., into single substrates. In this invited talk, we present our recent progress in this active area. Particularly, we focus on fabrication of 3D micro- and nanofluidic devices and 3D high-Q microcavities in glass substrates by femtosecond laser direct writing.

Microengineering of magnetic bearings and actuators

NASA Astrophysics Data System (ADS)

Ghantasala, Muralihar K.; Qin, LiJiang; Sood, Dinesh K.; Zmood, Ronald B.

2000-06-01

Microengineering has evolved in the last decade as a subject of its own with the current research encompassing every possible area of devices from electromagnetic to optical and bio-micro electromechanical systems (MEMS). The primary advantage of the micro system technology is its small size, potential to produce high volume and low cost devices. However, the major impediments in the successful realization of many micro devices in practice are the reliability, packaging and integration with the existing microelectronics technology. Microengineering of actuators has recently grown tremendously due to its possible applicability to a wide range of devices of practical importance and the availability of a choice of materials. Selection of materials has been one of the important aspects of the design and fabrication of many micro system and actuators. This paper discusses the issues related to the selection of materials and subsequently their effect on the performance of the actuator. These will be discussed taking micro magnetic actuators and bearings, in particular, as examples. Fabrication and processing strategies and performance evaluation methods adopted will be described. Current status of the technology and projected futuristic applications in this area will be reviewed.

Microactuateur electrothermique bistable: Etude d'implementation avec une technologie standard CMOS

NASA Astrophysics Data System (ADS)

Ressejac, Isabelle

The general objective of this Ph.D. thesis was to study the implementation of a new type of eletrothermal microactuator. This actuator presents the advantages to be bistable and fabricated in a standard CMOS process, allowing the integration of a microelectronics addressing circuit on the same substrate. Experimental research work, presented in this thesis, relate to the different steps carried out in order to implement this CMOS MEMS device: its theoretical conception, its fabrication with a standard CMOS technology, its micromachining as a post-process, its characterization and its electro-thermo-mechanical modeling. The device was designed and fabricated by using Mitel 1,5 mum CMOS technology and the Can-MEMS service which are both available via the Canadian Microelectronics Corporation. Fabricated monolithically within a standard CMOS process, our microactuator is suitable for large-scale integration due to its small dimensions (length ˜1000 mum and width ˜150 mum). It constitutes the basic component of a N by N matrix controlled by a microelectronic addressing system built on the same substrate. Initially, only one micromachining technique (involving TMAH) was used, and long etching times (>9 h) were requires} in order to release the microstructures. However, the passivation layer from the CMOS process could protect the underlying metal from the TMAH for a sufficient time (only ˜1--2 h). Consequently, we had to develop a micromachining strategy with shorter etching times to allow the complete release of the microstructures without damaging them. Post-processing begins with deposition (by sputtering) of a platinum layer intended to protect the abutment from subsequent etching. Our micromachining strategy is mainly based on the use of a hybrid etching process starting with a first anisotropic TMAH etching followed by a XeF2 isotropic etching. After micromachining, the released microactuator has a significant initial deflection with its tip reaching a height up to a hundred times higher than its thickness. This natural deflection results from the relaxation of internal stresses inside the thin films which are part of the microactuator. These internal stresses are intrinsics to the host CMOS process. We have developed a model of the microactuator's initial deflection using mechanical properties of thin films and dimensions of the structure. Actuation experiments were performed in order to characterize the deflection of the microactuator with respect to the heating of the bilayers (separately and together). We have developed a thermal actuation analytical model for an n-layers multimorph structure, which takes into account the initial deflection resulting from the relaxation of stresses as well as the deflection due to the temperature increase during the electrothermal activation of the bilayers. (Abstract shortened by UMI.)

Space Qualified High Speed Reed Solomon Encoder

NASA Technical Reports Server (NTRS)

Gambles, Jody W.; Winkert, Tom

1993-01-01

This paper reports a Class S CCSDS recommendation Reed Solomon encoder circuit baselined for several NASA programs. The chip is fabricated using United Technologies Microelectronics Center's UTE-R radiation-hardened gate array family, contains 64,000 p-n transistor pairs, and operates at a sustained output data rate of 200 MBits/s. The chip features a pin selectable message interleave depth of from 1 to 8 and supports output block lengths of 33 to 255 bytes. The UTE-R process is reported to produce parts that are radiation hardened to 16 Rads (Si) total dose and 1.0(exp -10) errors/bit-day.

Room-temperature semiconductor heterostructure refrigeration

NASA Astrophysics Data System (ADS)

Chao, K. A.; Larsson, Magnus; Mal'shukov, A. G.

2005-07-01

With the proper design of semiconductor tunneling barrier structures, we can inject low-energy electrons via resonant tunneling, and take out high-energy electrons via a thermionic process. This is the operation principle of our semiconductor heterostructure refrigerator (SHR) without the need of applying a temperature gradient across the device. Even for the bad thermoelectric material AlGaAs, our calculation shows that at room temperature, the SHR can easily lower the temperature by 5-7K. Such devices can be fabricated with the present semiconductor technology. Besides its use as a kitchen refrigerator, the SHR can efficiently cool microelectronic devices.

Micromachined capacitive ultrasonic immersion transducer array

NASA Astrophysics Data System (ADS)

Jin, Xuecheng

Capacitive micromachined ultrasonic transducers (cMUTs) have emerged as an attractive alternative to conventional piezoelectric ultrasonic transducers. They offer performance advantages of wide bandwidth and sensitivity that have heretofore been attainable. In addition, micromachining technology, which has benefited from the fast-growing microelectronics industry, enables cMUT array fabrication and electronics integration. This thesis describes the design and fabrication of micromachined capacitive ultrasonic immersion transducer arrays. The basic transducer electrical equivalent circuit is derived from Mason's theory. The effects of Lamb waves and Stoneley waves on cross coupling and acoustic losses are discussed. Electrical parasitics such as series resistance and shunt capacitance are also included in the model of the transducer. Transducer fabrication technology is systematically studied. Device dimension control in both vertical and horizontal directions, process alternatives and variations in membrane formation, via etch and cavity sealing, and metalization as well as their impact on transducer performance are summarized. Both 64 and 128 element 1-D array transducers are fabricated. Transducers are characterized in terms of electrical input impedance, bandwidth, sensitivity, dynamic range, impulse response and angular response, and their performance is compared with theoretical simulation. Various schemes for cross coupling reduction is analyzed, implemented, and verified with both experiments and theory. Preliminary results of immersion imaging are presented using 64 elements 1-D array transducers for active source imaging.

A Low Cost Rad-Tolerant Standard Cell Library

NASA Technical Reports Server (NTRS)

Gambles, Jody W.; Maki, Gary K.

1997-01-01

This paper describes circuit design techniques developed at the NASA Institute of Advanced Microelectronics that have been shown to protect CMOS circuits from the deleterious effects of the natural space radiation environment. The IAuE is leading a program to incorporate these radiation-tolerance providing design techniques into a commercial standard cell library that will be used in conjunction with available Electronic Design Automation tools to produce space flight qualified microelectronics fabricated at modern commercial CMOS foundries.

Macro management of microelectronics in India in 1990s

NASA Astrophysics Data System (ADS)

Gupta, Parmod K.

1992-08-01

Development of microelectronics is taking place at a very fast rate all over the globe, including India. New technologies are introduced at very short intervals in order to capture the consumer market. It is essential that these technologies are managed properly at the macro level in order to bring the desired results. Microelectronics plays a very vital role in office automation for achieving cost effective results in a highly competitive environment. Introduction of various facilities like laser printers, photo copiers, dictaphone-selectronic boards, electronic telexes, teleconference rooms, telephone answering machines, computer, word processors, sensors, etc. have all revolutionized the industry. Keeping the above in view, the present and future status of microelectronics, with special emphasis on its role in office automation in India, are discussed in detail in this paper.

Photovoltaic energy converter as a chipscale high efficiency power source for implanted active microelectronic devices.

PubMed

Hwang, N-J; Patterson, W R; Song, Y-K; Atay, T; Nurmikko, A V

2004-01-01

We report the development of a microscale photovoltaic energy converter which has been designed and implemented to deliver power to CMOS-based microelectronic chips. The design targets the delivery of voltages on the order of 3V with power levels in excess of 10 mW. The geometry of the prototype device, which has been fabricated and tested, is specifically designed for coupling to an optical fiber, to facilitate remote power delivery in implantable component environment.

Three-dimensional modeling of n+-nu-n+ and p+-pi-p+ semiconducting devices for analog ULSI microelectronics

NASA Astrophysics Data System (ADS)

Gillet, Jean-Numa; Degorce, Jean-Yves; Belisle, Jonathan; Meunier, Michel

2004-03-01

Three-dimensional modeling of n^+-ν -n^+ and p^+-π -p^+ semiconducting devices for analog ULSI microelectronics Jean-Numa Gillet,^a,b Jean-Yves Degorce,^a Jonathan Bélisle^a and Michel Meunier.^a,c ^a École Polytechnique de Montréal, Dept. of Engineering Physics, CP 6079, Succ. Centre-vile, Montréal, Québec H3C 3A7, Canada. ^b Corresponding author. Email: Jean-Numa.Gillet@polymtl.ca ^c Also with LTRIM Technologies, 140-440, boul. A.-Frappier, Laval, Québec H7V 4B4, Canada. We present for the first time three-dimensional (3-D) modeling of n^+-ν -n^+ and p^+-π -p^+ semiconducting resistors, which are fabricated by laser-induced doping in a gateless MOSFET and present significant applications for analog ULSI microelectronics. Our modeling software is made up of three steps. The two first concerns modeling of a new laser-trimming fabrication process. With the molten-silicon temperature distribution obtained from the first, we compute in the second the 3-D dopant distribution, which creates the electrical link through the device gap. In this paper the emphasis is on the third step, which concerns 3-D modeling of the resistor electronic behavior with a new tube multiplexing algorithm (TMA). The device current-voltage (I-V) curve is usually obtained by solving three coupled partial differential equations with a finite-element method. A 3-D device as our resistor cannot be modeled with this classical method owing to its prohibitive computational cost in three dimensions. This problem is however avoided by our TMA, which divides the 3-D device into one-dimensional (1-D) multiplexed tubes. In our TMA 1-D systems of three ordinary differential equations are solved to determine the 3-D device I-V curve, which substantially increases computation speed compared with the classical method. Numerical results show a good agreement with experiments.

Reliability Considerations for Ultra- Low Power Space Applications

NASA Technical Reports Server (NTRS)

White, Mark; Johnston, Allan

2012-01-01

NASA, the aerospace community, and other high reliability (hi-rel) users of advanced microelectronic products face many challenges as technology continues to scale into the deep sub- micron region and ULP devices are sought after. Technology trends, ULP microelectronics, scaling and performance tradeoffs, reliability considerations, and spacecraft environments will be presented from a ULP perspective for space applications.

GaN Nanowire Devices: Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Scott, Reum

The development of microelectronics in the last 25 years has been characterized by an exponential increase of the bit density in integrated circuits (ICs) with time. Scaling solid-state devices improves cost, performance, and power; as such, it is of particular interest for companies, who gain a market advantage with the latest technology. As a result, the microelectronics industry has driven transistor feature size scaling from 10 μm to ~30 nm during the past 40 years. This trend has persisted for 40 years due to optimization, new processing techniques, device structures, and materials. But when noting processor speeds from the 1970's to 2009 and then again in 2010, the implication would be that the trend has ceased. To address the challenge of shrinking the integrated circuit (IC), current research is centered on identifying new materials and devices that can supplement and/or potentially supplant it. Bottom-up methods tailor nanoscale building blocks---atoms, molecules, quantum dots, and nanowires (NWs)---to be used to overcome these limitations. The Group IIIA nitrides (InN, AlN, and GaN) possess appealing properties such as a direct band gap spanning the whole solar spectrum, high saturation velocity, and high breakdown electric field. As a result nanostructures and nanodevices made from GaN and related nitrides are suitable candidates for efficient nanoscale UV/ visible light emitters, detectors, and gas sensors. To produce devices with such small structures new fabrication methods must be implemented. Devices composed of GaN nanowires were fabricated using photolithography and electron beam lithography. The IV characteristics of these devices were noted under different illuminations and the current tripled from 4.8*10-7 A to 1.59*10 -6 A under UV light which persisted for at least 5hrs.

NASA Tech Briefs, September 1993. Volume 17, No. 9

NASA Technical Reports Server (NTRS)

1993-01-01

Topics include: Microelectronics; Electronic Components and Circuits; Electronic Systems; Physical Sciences; Materials; Computer Programs; Mechanics; Machinery/Automation; Manufacturing/Fabrication; Mathematics and Information Sciences; Life Sciences; Books and Reports.

Microelectronics: The Nature of Work, Skills and Training. An Analysis of Case Studies from Developed and Developing Countries. Training Discussion Paper No. 51.

ERIC Educational Resources Information Center

Acero, Liliana

Microelectronic technologies have had an impact on the nature of work in industry for both white-collar and blue-collar workers. Evidence from sector- and enterprise-level studies shows changes in skills and job content for blue-collar workers involved with numerically controlled machine tools, robots, and other microelectronics applications.…

NASA Tech Briefs, June 1994. Volume 18, No. 6

NASA Technical Reports Server (NTRS)

1994-01-01

Topics covered include: Microelectronics; Electronic Components and Circuits; Electronic Systems; Physical Sciences; Materials; Computer Programs; Mechanics; Machinery/Automation; Manufacturing/Fabrication; Mathematics and Information Sciences; Life Sciences; Books and Reports

Linear and passive silicon diodes, isolators, and logic gates

NASA Astrophysics Data System (ADS)

Li, Zhi-Yuan

2013-12-01

Silicon photonic integrated devices and circuits have offered a promising means to revolutionalize information processing and computing technologies. One important reason is that these devices are compatible with conventional complementary metal oxide semiconductor (CMOS) processing technology that overwhelms current microelectronics industry. Yet, the dream to build optical computers has yet to come without the breakthrough of several key elements including optical diodes, isolators, and logic gates with low power, high signal contrast, and large bandwidth. Photonic crystal has a great power to mold the flow of light in micrometer/nanometer scale and is a promising platform for optical integration. In this paper we present our recent efforts of design, fabrication, and characterization of ultracompact, linear, passive on-chip optical diodes, isolators and logic gates based on silicon two-dimensional photonic crystal slabs. Both simulation and experiment results show high performance of these novel designed devices. These linear and passive silicon devices have the unique properties of small fingerprint, low power request, large bandwidth, fast response speed, easy for fabrication, and being compatible with COMS technology. Further improving their performance would open up a road towards photonic logics and optical computing and help to construct nanophotonic on-chip processor architectures for future optical computers.

Uses of ceramics in microelectronics: A survey

NASA Technical Reports Server (NTRS)

Bratschun, W. R.; Mountvala, A. J.; Pincus, A. G.

1971-01-01

The properties and behavior of ceramic materials used in components for electronic circuitry are examined to appraise the present and future directions for microelectronics, and to suggest further product development, and how innovations may be useful in other technologies. Ceramic and glass insulators, resistors, capacitors, and the use of ceramics and glasses in microcircuitry are discussed along with technology transfer to nonaerospace uses.

Microelectronics used for Semiconductor Imaging Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heijne, Erik H. M.

Semiconductor crystal technology, microelectronics developments and nuclear particle detection have been in a relation of symbiosis, all the way from the beginning. The increase of complexity in electronics chips can now be applied to obtain much more information on the incident nuclear radiation. Some basic technologies are described, in order to acquire insight in possibilities and limitations for the most recent detectors.

Centimetre-scale micropore alignment in oriented polycrystalline metal-organic framework films via heteroepitaxial growth.

PubMed

Falcaro, Paolo; Okada, Kenji; Hara, Takaaki; Ikigaki, Ken; Tokudome, Yasuaki; Thornton, Aaron W; Hill, Anita J; Williams, Timothy; Doonan, Christian; Takahashi, Masahide

2017-03-01

The fabrication of oriented, crystalline films of metal-organic frameworks (MOFs) is a critical step toward their application to advanced technologies such as optics, microelectronics, microfluidics and sensing. However, the direct synthesis of MOF films with controlled crystalline orientation remains a significant challenge. Here we report a one-step approach, carried out under mild conditions, that exploits heteroepitaxial growth for the rapid fabrication of oriented polycrystalline MOF films on the centimetre scale. Our methodology employs crystalline copper hydroxide as a substrate and yields MOF films with oriented pore channels on scales that primarily depend on the dimensions of the substrate. To demonstrate that an anisotropic crystalline morphology can translate to a functional property, we assembled a centimetre-scale MOF film in the presence of a dye and showed that the optical response could be switched 'ON' or 'OFF' by simply rotating the film.

Miniaturized Environmental Monitoring Instrumentation

DOE Office of Scientific and Technical Information (OSTI.GOV)

C. B. Freidhoff

1997-09-01

The objective of the Mass Spectrograph on a Chip (MSOC) program is the development of a miniature, multi-species gas sensor fabricated using silicon micromachining technology which will be orders of magnitude smaller and lower power consumption than a conventional mass spectrometer. The sensing and discrimination of this gas sensor are based on an ionic mass spectrograph, using magnetic and/or electrostatic fields. The fields cause a spatial separation of the ions according to their respective mass-to-charge ratio. The fabrication of this device involves the combination of microelectronics with micromechanically built sensors and, ultimately, vacuum pumps. The prototype of a chemical sensormore » would revolutionize the method of performing environmental monitoring for both commercial and government applications. The portable unit decided upon was the miniaturized gas chromatograph with a mass spectrometer detector, referred to as a GC/MS in the analytical marketplace.« less

Silicon Qubits

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ladd, Thaddeus D.; Carroll, Malcolm S.

2018-02-28

Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of amore » single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.« less

Study of thermo-fluidic behavior of micro-droplet in inkjet-based micro manufacturing processes

NASA Astrophysics Data System (ADS)

Das, Raju; Mahapatra, Abhijit; Ball, Amit Kumar; Roy, Shibendu Shekhar; Murmu, Naresh Chandra

2017-06-01

Inkjet printing technology, a maskless, non-contact patterning operation, which has been a revelation in the field of micro and nano manufacturing for its use in the selective deposition of desired materials. It is becoming an exciting alternative technology such as lithography to print functional material on to a substrate. Selective deposition of functional materials on desired substrates is a basic requirement in many of the printing based micro and nano manufacturing operations like the fabrication of microelectronic devices, solar cell, Light-emitting Diode (LED) research fields like pharmaceutical industries for drug discovery purposes and in biotechnology to make DNA microarrays. In this paper, an attempt has been made to design and develop an indigenous Electrohydrodynamic Inkjet printing system for micro fabrication and to study the interrelationships between various thermos-fluidic parameters of the ink material in the printing process. The effect of printing process parameters on printing performance characteristics has also been studied. And the applicability of the process has also been experimentally demonstrated. The experimentally found results were quite satisfactory and accordance to its applicability.

Book of Knowledge (BOK) for NASA Electronic Packaging Roadmap

NASA Technical Reports Server (NTRS)

Ghaffarian, Reza

2015-01-01

The objective of this document is to update the NASA roadmap on packaging technologies (initially released in 2007) and to present the current trends toward further reducing size and increasing functionality. Due to the breadth of work being performed in the area of microelectronics packaging, this report presents only a number of key packaging technologies detailed in three industry roadmaps for conventional microelectronics and a more recently introduced roadmap for organic and printed electronics applications. The topics for each category were down-selected by reviewing the 2012 reports of the International Technology Roadmap for Semiconductor (ITRS), the 2013 roadmap reports of the International Electronics Manufacturing Initiative (iNEMI), the 2013 roadmap of association connecting electronics industry (IPC), the Organic Printed Electronics Association (OE-A). The report also summarizes the results of numerous articles and websites specifically discussing the trends in microelectronics packaging technologies.

Two Photon Polymerization of Microneedles for Transdermal Drug Delivery

PubMed Central

Gittard, Shaun D.; Ovsianikov, Aleksandr; Chichkov, Boris N.; Doraiswamy, Anand; Narayan, Roger J.

2010-01-01

Importance of the field Microneedles are small-scale devices that are finding use for transdermal delivery of protein-based pharmacologic agents and nucleic acid-based pharmacologic agents; however, microneedles prepared using conventional microelectronics-based technologies have several shortcomings, which have limited translation of these devices into widespread clinical use. Areas covered in this review Two photon polymerization is a laser-based rapid prototyping technique that has been recently used for direct fabrication of hollow microneedles with a wide variety of geometries. In addition, an indirect rapid prototyping method that involves two photon polymerization and polydimethyl siloxane micromolding has been used for fabrication of solid microneedles with exceptional mechanical properties. What the reader will gain In this review, the use of two photon polymerization for fabricating in-plane and out-of-plane hollow microneedle arrays is described. The use of two photon polymerization-micromolding for fabrication of solid microneedles is also reviewed. In addition, fabrication of microneedles with antimicrobial properties is discussed; antimicrobial microneedles may reduce the risk of infection associated with formation of channels through the stratum corneum. Take home message It is anticipated that the use of two photon polymerization as well as two photon polymerization-micromolding for fabrication of microneedles and other microstructured drug delivery devices will increase over the coming years. PMID:20205601

A microelectronics approach for the ROSETTA surface science package

NASA Technical Reports Server (NTRS)

Sandau, Rainer (Editor); Alkalaj, Leon

1996-01-01

In relation to the Rosetta surface science package, the benefits of the application of advanced microelectronics packaging technologies and other output from the Mars environmental survey (MESUR) integrated microelectronics study are reported on. The surface science package will be designed to operate for tens of hours. Its limited mass and power consumption make necessary a highly integrated design with all the instruments and subunits operated from a centralized control and information management subsystem.

Electronics for better healthcare.

PubMed

Wolf, Bernhard; Herzog, Karolin

2013-06-01

Microelectronics and microsystem technology have changed our daily lives considerably in the past 50 years. Countless everyday objects contain microelectronic components. In healthcare up to the present, however, it has not been possible to make major alterations in introducing electronics and information technology that would lead to innovative improvements and greater transparency. This paper describes initial steps in diagnostics and oncological therapy including telematic healthcare systems which can, for example, assist patients with cardiovascular diseases and shows, through these areas, how electronics and microsystems technology can contribute to better healthcare.

RADIANCE PROCESS EVALUATION FOR PARTICLE REMOVAL

EPA Science Inventory

The microelectronics industry (wafer, flat panel displays, photomasks, and storage media) is transitioning to higher device densities and larger substrate formats. These changes will challenge standard cleaning methods and will require significant increases to the fabricator inf...

Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide.

PubMed

Min Lee, Seung; Hwan Yum, Jung; Larsen, Eric S; Chul Lee, Woo; Keun Kim, Seong; Bielawski, Christopher W; Oh, Jungwoo

2017-10-16

Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short channel effects in microelectronic devices. Despite their advantages, the high substrate cost and overheating problems associated with complexities in substrate fabrication as well as the low thermal conductivity of silicon oxide prevent broad applications of this technology. To overcome these challenges, we describe a new approach of using beryllium oxide (BeO). The use of atomic layer deposition (ALD) for producing this material results in lowering the SOI wafer production cost. Furthermore, the use of BeO exhibiting a high thermal conductivity might minimize the self-heating issues. We show that crystalline Si can be grown on ALD BeO and the resultant devices exhibit potential for use in advanced SOI technology applications.

Strategic Computing. New-Generation Computing Technology: A Strategic Plan for Its Development and Application to Critical Problems in Defense

DTIC Science & Technology

1983-10-28

Computing. By seizing an opportunity to leverage recent advances in artificial intelligence, computer science, and microelectronics, the Agency plans...occurred in many separated areas of artificial intelligence, computer science, and microelectronics. Advances in "expert system" technology now...and expert knowledge o Advances in Artificial Intelligence: Mechanization of speech recognition, vision, and natural language understanding. o

Labour-Saving versus Work-Amplifying Effects of Micro-Electronics.

ERIC Educational Resources Information Center

Watanabe, Susumu

1986-01-01

This article argues that the labor-displacement effect of microelectronic machinery, especially numerically controlled machine tools and robots, has been exaggerated and that people tend to confuse the impact of intensified international competition with that of the new technology. (Author/CT)

DUV phase mask for 100 nm period grating printing

NASA Astrophysics Data System (ADS)

Jourlin, Y.; Bourgin, Y.; Reynaud, S.; Parriaux, O.; Talneau, A.; Karvinen, P.; Passilly, N.; Zain, A. Md.; De La Rue, R. M.

2008-04-01

Whereas microelectronic lithography is heading to the 32 nm node and discussing immersion and double-patterning strategies, there is much which can be done with the 45 nm node in microoptics for white light processing. For instance, one of the most demanding applications in terms of achievable period is the LCD lossless polarizer, which can transmit the TM polarization and reflect the TE polarization evenly all through the visible spectrum - provided that a 1D metal grid of 100 nm period can be fabricated. The manufacture of such polarizing panels cannot resort to the step & repeat cameras of microelectronics since the substrates are too large, too thin, too wavy and full of contaminants. There is therefore a need for specific fabrication techniques. It is one of these techniques that a subgroup of partners belonging to two of the Networks of Excellence of the European Community, NEMO and ePIXnet, have decided to explore together.

Space Radiation Environment Prediction for VLSI microelectronics devices onboard a LEO Satellite using OMERE-Trad Software

NASA Astrophysics Data System (ADS)

Sajid, Muhammad

This tutorial/survey paper presents the assessment/determination of level of hazard/threat to emerging microelectronics devices in Low Earth Orbit (LEO) space radiation environment with perigee at 300 Km, apogee at 600Km altitude having different orbital inclinations to predict the reliability of onboard Bulk Built-In Current Sensor (BBICS) fabricated in 350nm technology node at OptMA Lab. UFMG Brazil. In this context, the various parameters for space radiation environment have been analyzed to characterize the ionizing radiation environment effects on proposed BBICS. The Space radiation environment has been modeled in the form of particles trapped in Van-Allen radiation belts(RBs), Energetic Solar Particles Events (ESPE) and Galactic Cosmic Rays (GCR) where as its potential effects on Device- Under-Test (DUT) has been predicted in terms of Total Ionizing Dose (TID), Single-Event Effects (SEE) and Displacement Damage Dose (DDD). Finally, the required mitigation techniques including necessary shielding requirements to avoid undesirable effects of radiation environment at device level has been estimated /determined with assumed standard thickness of Aluminum shielding. In order to evaluate space radiation environment and analyze energetic particles effects on BBICS, OMERE toolkit developed by TRAD was utilized.

Design and fabrication of zeolite macro- and micromembranes

NASA Astrophysics Data System (ADS)

Chau, Lik Hang Joseph

2001-07-01

The chemical nature of the support surface influences zeolite nucleation, crystal growth and elm adhesion. It had been demonstrated that chemical modification of support surface can significantly alter the zeolite film and has a good potential for large-scale applications for zeolite membrane production. The incorporation of titanium and vanadium metal ions into the structural framework of MFI zeolite imparts the material with catalytic properties. The effects of silica and metal (i.e., Ti and V) content, template concentration and temperature on the zeolite membrane growth and morphology were investigated. Single-gas permeation experiments were conducted for noble gases (He and Ar), inorganic gases (H2, N2, SF6) and hydrocarbons (methane, n-C4, i-C4) to determine the separation performance of these membranes. Using a new fabrication method based on microelectronic fabrication and zeolite thin film technologies, complex microchannel geometry and network (<5 mum), as well as zeolite arrays (<10 mum) were successfully fabricated onto highly orientated supported zeolite films. The zeolite micropatterns were stable even after repeated thermal cycling between 303 K and 873 K for prolonged periods of time. This work also demonstrates that zeolites (i.e., Sil-1, ZSM-5 and TS-1) can be employed as catalyst, membrane or structural materials in miniature chemical devices. Traditional semiconductor fabrication technology was employed in micromachining the device architecture. Four strategies for the manufacture of zeolite catalytic microreactors were discussed: zeolite powder coating, uniform zeolite film growth, localized zeolite growth, and etching of zeolite-silicon composite film growth inhibitors. Silicalite-1 was also prepared as free-standing membrane for zeolite membrane microseparators.

Two autowire versions for CDC-3200 and IBM-360

NASA Technical Reports Server (NTRS)

Billingsley, J. B.

1972-01-01

Microelectronics program was initiated to evaluate circuitry, packaging methods, and fabrication approaches necessary to produce completely procured logic system. Two autowire programs were developed for CDC-3200 and IBM-360 computers for use in designing logic systems.

Comparative Advantages in Microelectronics,

DTIC Science & Technology

The initial point of departure for analyzing comparative advantages in microelectronics is to make certain explicit assumptions. First, technology...changes conditions but does not determine comparative advantages . Secondly, the entire industrial infrastructure is becoming increasingly abstract...that informatics will profoundly affect the productive infrastructure and the international division of labour.

Three-Dimensional Printing of Multifunctional Nanocomposites: Manufacturing Techniques and Applications.

PubMed

Farahani, Rouhollah D; Dubé, Martine; Therriault, Daniel

2016-07-01

The integration of nanotechnology into three-dimensional printing (3DP) offers huge potential and opportunities for the manufacturing of 3D engineered materials exhibiting optimized properties and multifunctionality. The literature relating to different 3DP techniques used to fabricate 3D structures at the macro- and microscale made of nanocomposite materials is reviewed here. The current state-of-the-art fabrication methods, their main characteristics (e.g., resolutions, advantages, limitations), the process parameters, and materials requirements are discussed. A comprehensive review is carried out on the use of metal- and carbon-based nanomaterials incorporated into polymers or hydrogels for the manufacturing of 3D structures, mostly at the microscale, using different 3D-printing techniques. Several methods, including but not limited to micro-stereolithography, extrusion-based direct-write technologies, inkjet-printing techniques, and popular powder-bed technology, are discussed. Various examples of 3D nanocomposite macro- and microstructures manufactured using different 3D-printing technologies for a wide range of domains such as microelectromechanical systems (MEMS), lab-on-a-chip, microfluidics, engineered materials and composites, microelectronics, tissue engineering, and biosystems are reviewed. Parallel advances on materials and techniques are still required in order to employ the full potential of 3D printing of multifunctional nanocomposites. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Sensing systems using chip-based spectrometers

NASA Astrophysics Data System (ADS)

Nitkowski, Arthur; Preston, Kyle J.; Sherwood-Droz, Nicolás.; Behr, Bradford B.; Bismilla, Yusuf; Cenko, Andrew T.; DesRoches, Brandon; Meade, Jeffrey T.; Munro, Elizabeth A.; Slaa, Jared; Schmidt, Bradley S.; Hajian, Arsen R.

2014-06-01

Tornado Spectral Systems has developed a new chip-based spectrometer called OCTANE, the Optical Coherence Tomography Advanced Nanophotonic Engine, built using a planar lightwave circuit with integrated waveguides fabricated on a silicon wafer. While designed for spectral domain optical coherence tomography (SD-OCT) systems, the same miniaturized technology can be applied to many other spectroscopic applications. The field of integrated optics enables the design of complex optical systems which are monolithically integrated on silicon chips. The form factors of these systems can be significantly smaller, more robust and less expensive than their equivalent free-space counterparts. Fabrication techniques and material systems developed for microelectronics have previously been adapted for integrated optics in the telecom industry, where millions of chip-based components are used to power the optical backbone of the internet. We have further adapted the photonic technology platform for spectroscopy applications, allowing unheard-of economies of scale for these types of optical devices. Instead of changing lenses and aligning systems, these devices are accurately designed programmatically and are easily customized for specific applications. Spectrometers using integrated optics have large advantages in systems where size, robustness and cost matter: field-deployable devices, UAVs, UUVs, satellites, handheld scanning and more. We will discuss the performance characteristics of our chip-based spectrometers and the type of spectral sensing applications enabled by this technology.

Solid State Research.

DTIC Science & Technology

1982-11-22

48 Fabricated in Zone-Melting-Recrystallized Si Films on Si0 2-Coated Si Substrates V 4. MICROELECTRONICS 55 4.1 Charge-Coupled Devices: Time...OMCVD to the CLEFT (cleavage of lateral epitaxial films for transfer) process, a continuous epitaxial GaAs layer 3 Ym thick has been grown over a...complete-island-etch or local-oxidation-of-Si isolation, that were fabricated in zone-melting-recrystallized Si films on Si02-coated Si substrates. As

Managing the Manpower Aspects of Applying Micro-Electronics Technology.

ERIC Educational Resources Information Center

Thornton, P.; Routledge, C.

1980-01-01

Outlines major effects that the application of micro-electronics devices in products/processes and in office systems will have on future manpower and skill requirements in manufacturing organizations. Identifies the type of problems these changes will pose for manpower managers. Provides general guidelines for the successful management of these…

SETA Support for the DARPA Microelectronics Technology Insertion Program of the Microelectronics Technology Office

DTIC Science & Technology

1992-08-17

Conclusions. Key personnel planned and administered the 193-nm lithography SBIR workshop on May 7, 1992 as well as planned the GaAs Insertion...converters can use Josephson junctions (JJ) to improve performance. Superconductive quantum interference devices (SQUIDs), such as JJs, are used to form...forward control of a lithography stepper. Mark Conner at Booz-Allen has copies of the charts. You should take a few minutes to review them. I asked Costos

On-chip photonic microsystem for optical signal processing based on silicon and silicon nitride platforms

NASA Astrophysics Data System (ADS)

Li, Yu; Li, Jiachen; Yu, Hongchen; Yu, Hai; Chen, Hongwei; Yang, Sigang; Chen, Minghua

2018-04-01

The explosive growth of data centers, cloud computing and various smart devices is limited by the current state of microelectronics, both in terms of speed and heat generation. Benefiting from the large bandwidth, promising low power consumption and passive calculation capability, experts believe that the integrated photonics-based signal processing and transmission technologies can break the bottleneck of microelectronics technology. In recent years, integrated photonics has become increasingly reliable and access to the advanced fabrication process has been offered by various foundries. In this paper, we review our recent works on the integrated optical signal processing system. We study three different kinds of on-chip signal processors and use these devices to build microsystems for the fields of microwave photonics, optical communications and spectrum sensing. The microwave photonics front receiver was demonstrated with a signal processing range of a full-band (L-band to W-band). A fully integrated microwave photonics transceiver without the on-chip laser was realized on silicon photonics covering the signal frequency of up 10 GHz. An all-optical orthogonal frequency division multiplexing (OFDM) de-multiplier was also demonstrated and used for an OFDM communication system with the rate of 64 Gbps. Finally, we show our work on the monolithic integrated spectrometer with a high resolution of about 20 pm at the central wavelength of 1550 nm. These proposed on-chip signal processing systems potential applications in the fields of radar, 5G wireless communication, wearable devices and optical access networks.

Fabrication of silicon-based template-assisted nanoelectrode arrays and ohmic contact properties investigation.

PubMed

Bai, Anqi; Cheng, Buwen; Wang, Xiaofeng; Xue, Chunlai; Zuo, Yuhua; Wang, Qiming

2010-11-01

A convenient fabrication technology for large-area, highly-ordered nanoelectrode arrays on silicon substrate has been described here, using porous anodic alumina (PAA) as a template. The ultrathin PAA membranes were anodic oxidized utilizing a two-step anodization method, from Al film evaporated on substrate. The purposes for the use of two-step anodization were, first, improving the regularity of the porous structures, and second reducing the thickness of the membranes to 100-200 nm we desired. Then the nanoelectrode arrays were obtained by electroless depositing Ni-W alloy into the through pores of PAA membranes, making the alloy isolated by the insulating pore walls and contacting with the silicon substrates at the bottoms of pores. The Ni-W alloy was also electroless deposited at the back surface of silicon to form back electrode. Then ohmic contact properties between silicon and Ni-W alloy were investigated after rapid thermal annealing. Scanning electron microscopy (SEM) observations showed the structure characteristics, and the influence factors of fabrication effect were discussed. The current-voltage (I-V) curves revealed the contact properties. After annealing in N2 at 700 degrees C, good linear property was shown with contact resistance of 33 omega, which confirmed ohmic contacts between silicon and electrodes. These results presented significant application potential of this technology in nanosize current-injection devices in optoelectronics, microelectronics and bio-medical fields.

BOK-Printed Electronics

NASA Technical Reports Server (NTRS)

Ghaffarian, Reza

2013-01-01

The use of printed electronics technologies (PETs), 2D or 3D printing approaches either by conventional electronic fabrication or by rapid graphic printing of organic or nonorganic electronic devices on various small or large rigid or flexible substrates, is projected to grow exponentially in commercial industry. This has provided an opportunity to determine whether or not PETs could be applicable for low volume and high-reliability applications. This report presents a summary of literature surveyed and provides a body of knowledge (BOK) gathered on the current status of organic and printed electronics technologies. It reviews three key industry roadmaps- on this subject-OE-A, ITRS, and iNEMI-each with a different name identification for this emerging technology. This followed by a brief review of the status of the industry on standard development for this technology, including IEEE and IPC specifications. The report concludes with key technologies and applications and provides a technology hierarchy similar to those of conventional microelectronics for electronics packaging. Understanding key technology roadmaps, parameters, and applications is important when judicially selecting and narrowing the follow-up of new and emerging applicable technologies for evaluation, as well as the low risk insertion of organic, large area, and printed electronics.

Advanced Microelectronics Technologies for Future Small Satellite Systems

NASA Technical Reports Server (NTRS)

Alkalai, Leon

1999-01-01

Future small satellite systems for both Earth observation as well as deep-space exploration are greatly enabled by the technological advances in deep sub-micron microelectronics technologies. Whereas these technological advances are being fueled by the commercial (non-space) industries, more recently there has been an exciting new synergism evolving between the two otherwise disjointed markets. In other words, both the commercial and space industries are enabled by advances in low-power, highly integrated, miniaturized (low-volume), lightweight, and reliable real-time embedded systems. Recent announcements by commercial semiconductor manufacturers to introduce Silicon On Insulator (SOI) technology into their commercial product lines is driven by the need for high-performance low-power integrated devices. Moreover, SOI has been the technology of choice for many space semiconductor manufacturers where radiation requirements are critical. This technology has inherent radiation latch-up immunity built into the process, which makes it very attractive to space applications. In this paper, we describe the advanced microelectronics and avionics technologies under development by NASA's Deep Space Systems Technology Program (also known as X2000). These technologies are of significant benefit to both the commercial satellite as well as the deep-space and Earth orbiting science missions. Such a synergistic technology roadmap may truly enable quick turn-around, low-cost, and highly capable small satellite systems for both Earth observation as well as deep-space missions.

Tailoring femtosecond 1.5-μm Bessel beams for manufacturing high-aspect-ratio through-silicon vias

NASA Astrophysics Data System (ADS)

He, Fei; Yu, Junjie; Tan, Yuanxin; Chu, Wei; Zhou, Changhe; Cheng, Ya; Sugioka, Koji

2017-01-01

Three-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-μm Bessel beam. To eliminate the severe ablation caused by the sidelobes of a conventional Bessel beam, a fs Bessel beam is tailored using a specially designed binary phase plate. We demonstrate that the tailored fs Bessel beam can be used to fabricate a 2D array of approximately ∅10-μm TSVs on a 100-μm-thick Si substrate without any sidelobe damage, suggesting potential application in the 3D assembly of 3D Si ICs.

Tailoring femtosecond 1.5-μm Bessel beams for manufacturing high-aspect-ratio through-silicon vias.

PubMed

He, Fei; Yu, Junjie; Tan, Yuanxin; Chu, Wei; Zhou, Changhe; Cheng, Ya; Sugioka, Koji

2017-01-18

Three-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-μm Bessel beam. To eliminate the severe ablation caused by the sidelobes of a conventional Bessel beam, a fs Bessel beam is tailored using a specially designed binary phase plate. We demonstrate that the tailored fs Bessel beam can be used to fabricate a 2D array of approximately ∅10-μm TSVs on a 100-μm-thick Si substrate without any sidelobe damage, suggesting potential application in the 3D assembly of 3D Si ICs.

The NASA Electronic Parts and Packaging (NEPP) Program: An Overview

NASA Technical Reports Server (NTRS)

Label, Kenneth A.; Sampson, Michael J.

2016-01-01

This presentation provides an overview of the NEPP Program. The NEPP Mission is to provide guidance to NASA for the selection and application of microelectronics technologies; Improve understanding of the risks related to the use of these technologies in the space environment; Ensure that appropriate research is performed to meet NASA mission assurance needs. NEPP's Goals are to provide customers with appropriate and cost-effective risk knowledge to aid in: Selection and application of microelectronics technologies; Improved understanding of risks related to the use of these technologies in the space environment; Appropriate evaluations to meet NASA mission assurance needs; Guidelines for test and application of parts technologies in space; Assurance infrastructure and support for technologies in use by NASA space systems.

Polycrystalline silicon thin-film transistors on quartz fiber

NASA Astrophysics Data System (ADS)

Sugawara, Yuta; Uraoka, Yukiharu; Yano, Hiroshi; Hatayama, Tomoaki; Fuyuki, Takashi; Nakamura, Toshihiro; Toda, Sadayuki; Koaizawa, Hisashi; Mimura, Akio; Suzuki, Kenkichi

2007-11-01

We demonstrate the fabrication of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) on a thin quartz fiber for the first time. The poly-Si used in the active layer of the TFTs was prepared by excimer laser annealing of an amorphous Si thin film deposited on the fiber. Top-gated TFTs were fabricated on the fiber, and a field effect mobility of 10cm2/Vs was obtained. The proposed TFTs on a thin quartz fiber, named fiber TFTs, have potential application in microelectronic devices using TFTs fabricated on one-dimensional substrates.

Dielectric spectroscopy of Ag-starch nanocomposite films

NASA Astrophysics Data System (ADS)

Meena; Sharma, Annu

2018-04-01

In the present work Ag-starch nanocomposite films were fabricated via chemical reduction route. The formation of Ag nanoparticles was confirmed using transmission electron microscopy (TEM). Further the effect of varying concentration of Ag nanoparticles on the dielectric properties of starch has been studied. The frequency response of dielectric constant (ε‧), dielectric loss (ε″) and dissipation factor tan(δ) has been studied in the frequency range of 100 Hz to 1 MHz. Dielectric data was further analysed using Cole-Cole plots. The dielectric constant of starch was found to be 4.4 which decreased to 2.35 in Ag-starch nanocomposite film containing 0.50 wt% of Ag nanoparticles. Such nanocomposites with low dielectric constant have potential applications in microelectronic technologies.

Validation of Direct Analysis Real Time source/Time-of-Flight Mass Spectrometry for organophosphate quantitation on wafer surface.

PubMed

Hayeck, Nathalie; Ravier, Sylvain; Gemayel, Rachel; Gligorovski, Sasho; Poulet, Irène; Maalouly, Jacqueline; Wortham, Henri

2015-11-01

Microelectronic wafers are exposed to airborne molecular contamination (AMC) during the fabrication process of microelectronic components. The organophosphate compounds belonging to the dopant group are one of the most harmful groups. Once adsorbed on the wafer surface these compounds hardly desorb and could diffuse in the bulk of the wafer and invert the wafer from p-type to n-type. The presence of these compounds on wafer surface could have electrical effect on the microelectronic components. For these reasons, it is of importance to control the amount of these compounds on the surface of the wafer. As a result, a fast quantitative and qualitative analytical method, nondestructive for the wafers, is needed to be able to adjust the process and avoid the loss of an important quantity of processed wafers due to the contamination by organophosphate compounds. Here we developed and validated an analytical method for the determination of organic compounds adsorbed on the surface of microelectronic wafers using the Direct Analysis in Real Time-Time of Flight-Mass Spectrometry (DART-ToF-MS) system. Specifically, the developed methodology concerns the organophosphate group. Copyright © 2015 Elsevier B.V. All rights reserved.

Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications.

PubMed

Sung, Ho-Kun; Qiang, Tian; Yao, Zhao; Li, Yang; Wu, Qun; Lee, Hee-Kwan; Park, Bum-Doo; Lim, Woong-Sun; Park, Kyung-Ho; Wang, Cong

2017-06-20

This study presents a detailed fabrication method, together with validation, discussion, and analysis, for state-of-the-art silicon carbide (SiC) etching of vertical and bevelled structures by using inductively coupled plasma reactive ion etching (ICP-RIE) for microelectronic applications. Applying different gas mixtures, a maximum bevel angle of 87° (almost vertical), large-angle bevels ranging from 40° to 80°, and small-angel bevels ranging from 7° to 17° were achieved separately using distinct gas mixtures at different ratios. We found that SF 6 with additive O 2 was effective for vertical etching, with a best etching rate of 3050 Å/min. As for the large-angle bevel structures, BCl 3  + N 2 gas mixtures show better characteristics, exhibiting a controllable and large etching angle range from 40° to 80° through the adjustment of the mixture ratio. Additionally, a Cl 2  + O 2 mixture at different ratios is applied to achieve a small-angel bevels ranging from 7° to 17°. A minimum bevel angel of approximately 7° was achieved under the specific volume of 2.4 sccm Cl 2 and 3.6 sccm O 2 . These results can be used to improve performance in various microelectronic applications including MMIC via holes, PIN diodes, Schottky diodes, JFETs' bevel mesa, and avalanche photodiode fabrication.

Fabrication of planarised conductively patterned diamond for bio-applications.

PubMed

Tong, Wei; Fox, Kate; Ganesan, Kumaravelu; Turnley, Ann M; Shimoni, Olga; Tran, Phong A; Lohrmann, Alexander; McFarlane, Thomas; Ahnood, Arman; Garrett, David J; Meffin, Hamish; O'Brien-Simpson, Neil M; Reynolds, Eric C; Prawer, Steven

2014-10-01

The development of smooth, featureless surfaces for biomedical microelectronics is a challenging feat. Other than the traditional electronic materials like silicon, few microelectronic circuits can be produced with conductive features without compromising the surface topography and/or biocompatibility. Diamond is fast becoming a highly sought after biomaterial for electrical stimulation, however, its inherent surface roughness introduced by the growth process limits its applications in electronic circuitry. In this study, we introduce a fabrication method for developing conductive features in an insulating diamond substrate whilst maintaining a planar topography. Using a combination of microwave plasma enhanced chemical vapour deposition, inductively coupled plasma reactive ion etching, secondary diamond growth and silicon wet-etching, we have produced a patterned substrate in which the surface roughness at the interface between the conducting and insulating diamond is approximately 3 nm. We also show that the patterned smooth topography is capable of neuronal cell adhesion and growth whilst restricting bacterial adhesion. Copyright © 2014 Elsevier B.V. All rights reserved.

Scalable fabrication of carbon-based MEMS/NEMS and their applications: a review

NASA Astrophysics Data System (ADS)

Jiang, Shulan; Shi, Tielin; Zhan, Xiaobin; Xi, Shuang; Long, Hu; Gong, Bo; Li, Junjie; Cheng, Siyi; Huang, Yuanyuan; Tang, Zirong

2015-11-01

The carbon-based micro/nano electromechanical system (MEMS/NEMS) technique provides a powerful approach to large-scale manufacture of high-aspect-ratio carbon structures for wafer-level processing. The fabricated three-dimensional (3D) carbon structures have the advantages of excellent electrical and electrochemical properties, and superior biocompatibility. In order to improve their performance for applications in micro energy storage devices and microsensors, an increase in the footprint surface area is of great importance. Various approaches have been proposed for fabricating large surface area carbon-based structures, including the integration of nanostructures such as carbon nanotubes (CNTs), graphene, nanowires, nanofilms and nanowrinkles onto 3D structures, which has been proved to be effective and productive. Moreover, by etching the 3D photoresist microstructures through oxygen plasma or modifying the photoresist with specific materials which can be etched in the following pyrolysis process, micro/nano hierarchical carbon structures have been fabricated. These improved structures show excellent performance in various applications, especially in the fields of biological sensors, surface-enhanced Raman scattering, and energy storage devices such as micro-supercapacitors and fuel cells. With the rapid development of microelectronic devices, the carbon-based MEMS/NEMS technique could make more aggressive moves into microelectronics, sensors, miniaturized power systems, etc. In this review, the recent advances in the fabrication of micro/nano hierarchical carbon-based structures are introduced and the technical challenges and future outlook of the carbon-based MEMS/NEMS techniques are also analyzed.

Low-temperature atomic layer deposition of TiO{sub 2} thin layers for the processing of memristive devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Porro, Samuele, E-mail: samuele.porro@polito.it; Conti, Daniele; Guastella, Salvatore

2016-01-15

Atomic layer deposition (ALD) represents one of the most fundamental techniques capable of satisfying the strict technological requirements imposed by the rapidly evolving electronic components industry. The actual scaling trend is rapidly leading to the fabrication of nanoscaled devices able to overcome limits of the present microelectronic technology, of which the memristor is one of the principal candidates. Since their development in 2008, TiO{sub 2} thin film memristors have been identified as the future technology for resistive random access memories because of their numerous advantages in producing dense, low power-consuming, three-dimensional memory stacks. The typical features of ALD, such asmore » self-limiting and conformal deposition without line-of-sight requirements, are strong assets for fabricating these nanosized devices. This work focuses on the realization of memristors based on low-temperature ALD TiO{sub 2} thin films. In this process, the oxide layer was directly grown on a polymeric photoresist, thus simplifying the fabrication procedure with a direct liftoff patterning instead of a complex dry etching process. The TiO{sub 2} thin films deposited in a temperature range of 120–230 °C were characterized via Raman spectroscopy and x-ray photoelectron spectroscopy, and electrical current–voltage measurements taken in voltage sweep mode were employed to confirm the existence of resistive switching behaviors typical of memristors. These measurements showed that these low-temperature devices exhibit an ON/OFF ratio comparable to that of a high-temperature memristor, thus exhibiting similar performances with respect to memory applications.« less

Design Considerations in Capacitively Coupled Plasmas

NASA Astrophysics Data System (ADS)

Song, Sang-Heon; Ventzek, Peter; Ranjan, Alok

2015-11-01

Microelectronics industry has driven transistor feature size scaling from 10-6 m to 10-9 m during the past 50 years, which is often referred to as Moore's law. It cannot be overstated that today's information technology would not have been so successful without plasma material processing. One of the major plasma sources for the microelectronics fabrication is capacitively coupled plasmas (CCPs). The CCP reactor has been intensively studied and developed for the deposition and etching of different films on the silicon wafer. As the feature size gets to around 10 nm, the requirement for the process uniformity is less than 1-2 nm across the wafer (300 mm). In order to achieve the desired uniformity, the hardware design should be as precise as possible before the fine tuning of process condition is applied to make it even better. In doing this procedure, the computer simulation can save a significant amount of resources such as time and money which are critical in the semiconductor business. In this presentation, we compare plasma properties using a 2-dimensional plasma hydrodynamics model for different kinds of design factors that can affect the plasma uniformity. The parameters studied in this presentation include chamber accessing port, pumping port, focus ring around wafer substrate, and the geometry of electrodes of CCP.

Silicon Integrated Optics: Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Shearn, Michael Joseph, II

For decades, the microelectronics industry has sought integration and miniaturization as canonized in Moore's Law, and has continued doubling transistor density about every two years. However, further miniaturization of circuit elements is creating a bandwidth problem as chip interconnect wires shrink as well. A potential solution is the creation of an on-chip optical network with low delays that would be impossible to achieve using metal buses. However, this technology requires integrating optics with silicon microelectronics. The lack of efficient silicon optical sources has stymied efforts of an all-Si optical platform. Instead, the integration of efficient emitter materials, such as III-V semiconductors, with Si photonic structures is a low-cost, CMOS-compatible alternative platform. This thesis focuses on making and measuring on-chip photonic structures suitable for on-chip optical networking. The first part of the thesis assesses processing techniques of silicon and other semiconductor materials. Plasmas for etching and surface modification are described and used to make bonded, hybrid Si/III-V structures. Additionally, a novel masking method using gallium implantation into silicon for pattern definition is characterized. The second part of the thesis focuses on demonstrations of fabricated optical structures. A dense array of silicon devices is measured, consisting of fully-etched grating couplers, low-loss waveguides and ring resonators. Finally, recent progress in the Si/III-V hybrid system is discussed. Supermode control of devices is described, which uses changing Si waveguide width to control modal overlap with the gain material. Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing a CMOS-compatible process suitable for integration on in electronics platforms. Future prospects and ultimate limits of Si devices and the hybrid Si/III-V system are also considered.

Reliability and quality EEE parts issues

NASA Technical Reports Server (NTRS)

Barney, Dan; Feigenbaum, Irwin

1990-01-01

NASA policy and procedures are established which govern the selection, testing, and application of electrical, electronic, and electromechanical (EEE) parts. Recent advances in the state-of-the-art of electronic parts and associated technologies can significantly impact the electronic designs and reliability of NASA space transportation avionics. Significant issues that result from these advances are examined, including: recent advances in microelectronics technology (as applied to or considered for use in NASA projects); electron packaging technology advances (concurrent with, and as a result of, the development of the advanced microelectronic devices); availability of parts used in space avionics; and standardization and integration of parts activities between projects, centers, and contractors.

MIT Lincoln Laboratory Annual Report 2013

DTIC Science & Technology

2013-01-01

A small-scale demonstration FPGA is currently being fabricated in the Microelectronics Laboratory, and a larger array is being designed for fabri ...year, the first Friday of February is a day to call attention to heart disease . Efforts of the six-member team, MIT Lincoln Laboratory for the Heart

Using federal technology policy to strength the US microelectronics industry

NASA Astrophysics Data System (ADS)

Gover, J. E.; Gwyn, C. W.

1994-07-01

A review of US and Japanese experiences with using microelectronics consortia as a tool for strengthening their respective industries reveals major differences. Japan has established catch-up consortia with focused goals. These consortia have a finite life targeted from the beginning, and emphasis is on work that supports or leads to product and process-improvement-driven commercialization. Japan's government has played a key role in facilitating the development of consortia and has used consortia promote domestic competition. US consortia, on the other hand, have often emphasized long-range research with considerably less focus than those in Japan. The US consortia have searched for and often made revolutionary technology advancements. However, technology transfer to their members has been difficult. Only SEMATECH has assisted its members with continuous improvements, compressing product cycles, establishing relationships, and strengthening core competencies. The US government has not been a catalyst nor provided leadership in consortia creation and operation. We propose that in order to regain world leadership in areas where US companies lag foreign competition, the US should create industry-wide, horizontal-vertical, catch-up consortia or continue existing consortia in the six areas where the US lags behind Japan -- optoelectronics, displays, memories, materials, packaging, and manufacturing equipment. In addition, we recommend that consortia be established for special government microelectronics and microelectronics research integration and application. We advocate that these consortia be managed by an industry-led Microelectronics Alliance, whose establishment would be coordinated by the Department of Commerce. We further recommend that the Semiconductor Research Corporation, the National Science Foundation Engineering Research Centers, and relevant elements of other federal programs be integrated into this consortia complex.

Using federal technology policy to strength the US microelectronics industry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gover, J.E.; Gwyn, C.W.

1994-07-01

A review of US and Japanese experiences with using microelectronics consortia as a tool for strengthening their respective industries reveals major differences. Japan has established catch-up consortia with focused goals. These consortia have a finite life targeted from the beginning, and emphasis is on work that supports or leads to product and process-improvement-driven commercialization. Japan`s government has played a key role in facilitating the development of consortia and has used consortia promote domestic competition. US consortia, on the other hand, have often emphasized long-range research with considerably less focus than those in Japan. The US consortia have searched for andmore » often made revolutionary technology advancements. However, technology transfer to their members has been difficult. Only SEMATECH has assisted its members with continuous improvements, compressing product cycles, establishing relationships, and strengthening core competencies. The US government has not been a catalyst nor provided leadership in consortia creation and operation. We propose that in order to regain world leadership in areas where US companies lag foreign competition, the US should create industry-wide, horizontal-vertical, catch-up consortia or continue existing consortia in the six areas where the US lags behind Japan -- optoelectronics, displays, memories, materials, packaging, and manufacturing equipment. In addition, we recommend that consortia be established for special government microelectronics and microelectronics research integration and application. We advocate that these consortia be managed by an industry-led Microelectronics Alliance, whose establishment would be coordinated by the Department of Commerce. We further recommend that the Semiconductor Research Corporation, the National Science Foundation Engineering Research Centers, and relevant elements of other federal programs be integrated into this consortia complex.« less

Crystallization Process of Superlattice-Like Sb/SiO2 Thin Films for Phase Change Memory Application

NASA Astrophysics Data System (ADS)

Zhu, Xiao-Qin; Zhang, Rui; Hu, Yi-Feng; Lai, Tian-Shu; Zhang, Jian-Hao; Zou, Hua; Song, Zhi-Tang

2018-05-01

Not Available Supported by the National Natural Science Foundation of China under Grant No 11774438, the Natural Science Foundation of Jiangsu Province under Grant No BK20151172, the Changzhou Science and Technology Bureau under Grant No CJ20160028, the Qing Lan Project, the Opening Project of State Key Laboratory of Silicon Materials under Grant No SKL2017-04, and the Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology of Institute of Microelectronics of Chinese Academy of Sciences.

Investigation of “benign” ionic content in epoxy that induces microelectronic device failure

Treesearch

Gregory T. Schueneman; Jeffery Kingsbury; Edmund Klinkerch

2011-01-01

Microelectronics and the devices dependent upon them have the extremely challenging requirements of becoming more capable and less expensive every year. This drives the industry to pack more functions into an ever smaller footprint until the next technological revolution. Adding to this situation is the removal of lead from the bill of materials followed closely by...

Optical and Interface-Based Methods of Defect Engineering in Silicon

ERIC Educational Resources Information Center

Kondratenko, Yevgeniy Vladimirovich

2009-01-01

Ion implantation is widely used in the microelectronics industry for fabrication of source and drain transistor regions. Unfortunately, implantation causes considerable damage to the substrate lattice rendering most of the implanted dopant electrically inactive. Rapid thermal annealing (RTA) heals the damage by rapidly heating the substrate with a…

Risk Management of New Microelectronics for NASA: Radiation Knowledge-base

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.

2004-01-01

Contents include the following: NASA Missions - implications to reliability and radiation constraints. Approach to Insertion of New Technologies Technology Knowledge-base development. Technology model/tool development and validation. Summary comments.

PUBLISHER'S ANNOUNCEMENT: A revised scope for Journal of Micromechanics and Microengineering A revised scope for Journal of Micromechanics and Microengineering

NASA Astrophysics Data System (ADS)

Forbes, Ian

2010-05-01

Journal of Micromechanics and Microengineering is well known for publishing excellent work in highly competitive timescales. The journal's coverage has consistently evolved to reflect the current state of the field, and from May 2010 it will revisit its scope once again. The aims of the journal remain unchanged, however: to be the first choice of authors and readers in MEMS and micro-scale research. The new scope continues to focus on highlighting the link between fabrication technologies and their capacity to create novel devices. This link will be considered paramount in the journal, and both prospective authors and readers should let it serve as an inspiration to them. The burgeoning fields of NEMS and nano-scale engineering are more explicitly supported in the new scope. Research which ten years ago would have been considered science fiction has, through the tireless efforts of the community, become reality. The Editorial Board feel it is important to reflect the growing significance of this work in the scope. The new scope, drafted by Editor-in-Chief Professor Mark Allen, and approved by the Editorial Board, is as follows: Journal of Micromechanics and Microengineering covers all aspects of microelectromechanical structures, devices, and systems, as well as micromechanics and micromechatronics. The journal focuses on original work in fabrication and integration technologies, on the micro- and nano-scale. The journal aims to highlight the link between new fabrication technologies and their capacity to create novel devices. Original work in microengineering and nanoengineering is also reported. Such work is defined as applications of these fabrication and integration technologies to structures in which key attributes of the devices or systems depend on specific micro- or nano-scale features. Such applications span the physical, chemical, electrical and biological realms. New fabrication and integration techniques for both silicon and non-silicon materials are reported. Relevant modelling papers in micro- and nanoengineering are reported where supported by experimental data. The journal also covers integration of interface electronics with micro- and nanoengineered systems, as well as vacuum microelectronics, microfabricated electrically passive elements, and other micro- or nanoengineering-enabled electrical devices.

The MOS silicon gate technology and the first microprocessors

NASA Astrophysics Data System (ADS)

Faggin, F.

2015-12-01

Today we are so used to the enormous capabilities of microelectronics that it is hard to imagine what it might have been like in the early Sixties and Seventies when much of the technology we use today was being developed. This paper will first present a brief history of microelectronics and computers, taking us to the threshold of the inventions of the MOS silicon gate technology and the microprocessor. These two creations provided the basic technology that would allow only a few years later to merge microelectronics and computers into the first commercial monolithic computer. By the late Seventies, the first monolithic computer weighting less than one gram, occupying a volume of less than one cubic centimeter, dissipating less than one Watt, and selling for less than ten dollars, could perform more information processing than the UNIVAC I, the first commercial electronic computer introduced in 1951, made with 5200 vacuum tubes, dissipating 125kW, weighting 13 metric tons, occupying a room larger than 35m2, and selling for more than one million dollars per unit. The first-person story of the SGT and the early microprocessors will be told by the Italian-born physicist who led both projects.

Telerobotic electronic materials processing experiment

NASA Technical Reports Server (NTRS)

Ollendorf, Stanford

1991-01-01

The Office of Commercial Programs (OCP), working in conjunction with NASA engineers at the Goddard Space Flight Center, is supporting research efforts in robot technology and microelectronics materials processing that will provide many spinoffs for science and industry. The Telerobotic Materials Processing Experiment (TRMPX) is a Shuttle-launched materials processing test payload using a Get Away Special can. The objectives of the project are to define, develop, and demonstrate an automated materials processing capability under realistic flight conditions. TRMPX will provide the capability to test the production processes that are dependent on microgravity. The processes proposed for testing include the annealing of amorphous silicon to increase grain size for more efficient solar cells, thin film deposition to demonstrate the potential of fabricating solar cells in orbit, and the annealing of radiation damaged solar cells.

Three-dimensional direct laser written graphitic electrical contacts to randomly distributed components

NASA Astrophysics Data System (ADS)

Dorin, Bryce; Parkinson, Patrick; Scully, Patricia

2018-04-01

The development of cost-effective electrical packaging for randomly distributed micro/nano-scale devices is a widely recognized challenge for fabrication technologies. Three-dimensional direct laser writing (DLW) has been proposed as a solution to this challenge, and has enabled the creation of rapid and low resistance graphitic wires within commercial polyimide substrates. In this work, we utilize the DLW technique to electrically contact three fully encapsulated and randomly positioned light-emitting diodes (LEDs) in a one-step process. The resolution of the contacts is in the order of 20 μ m, with an average circuit resistance of 29 ± 18 kΩ per LED contacted. The speed and simplicity of this technique is promising to meet the needs of future microelectronics and device packaging.

Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang, H. L.; Mei, Z. X.; Zhang, Q. H.

2011-05-30

High-quality wurtzite MgZnO film was deposited on Si(111) substrate via a delicate interface engineering using BeO, by which solar-blind ultraviolet photodetectors were fabricated on the n-MgZnO(0001)/p-Si(111) heterojunction. A thin Be layer was deposited on clean Si surface with subsequent in situ oxidation processes, which provides an excellent template for high-Mg-content MgZnO growth. The interface controlling significantly improves the device performance, as the photodetector demonstrates a sharp cutoff wavelength at 280 nm, consistent with the optical band gap of the epilayer. Our experimental results promise potential applications of this technique in integration of solar-blind ultraviolet optoelectronic device with Si microelectronic technologies.

JPRS report. Science and technology: Europe and Latin America

NASA Astrophysics Data System (ADS)

1987-12-01

Topics addressed include: advanced materials; aerospace; civil aviation; automative industry; biotechnology; computers; metallurgical industries; microelectronics; science and technology policy; and lasers, sensor, and optics.

PREFACE: E-MRS 2012 Spring Meeting, Symposium M: More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics

NASA Astrophysics Data System (ADS)

Wenger, Christian; Fompeyrine, Jean; Vallée, Christophe; Locquet, Jean-Pierre

2012-12-01

More than Moore explores a new area of Silicon based microelectronics, which reaches beyond the boundaries of conventional semiconductor applications. Creating new functionality to semiconductor circuits, More than Moore focuses on motivating new technological possibilities. In the past decades, the main stream of microelectronics progresses was mainly powered by Moore's law, with two focused development arenas, namely, IC miniaturization down to nano scale, and SoC based system integration. While the microelectronics community continues to invent new solutions around the world to keep Moore's law alive, there is increasing momentum for the development of 'More than Moore' technologies which are based on silicon technologies but do not simply scale with Moore's law. Typical examples are RF, Power/HV, Passives, Sensor/Actuator/MEMS or Bio-chips. The More than Moore strategy is driven by the increasing social needs for high level heterogeneous system integration including non-digital functions, the necessity to speed up innovative product creation and to broaden the product portfolio of wafer fabs, and the limiting cost and time factors of advanced SoC development. It is believed that More than Moore will add value to society on top of and beyond advanced CMOS with fast increasing marketing potentials. Important key challenges for the realization of the 'More than Moore' strategy are: perspective materials for future THz devices materials systems for embedded sensors and actuators perspective materials for epitaxial approaches material systems for embedded innovative memory technologies development of new materials with customized characteristics The Hot topics covered by the symposium M (More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics) at E-MRS 2012 Spring Meeting, 14-18 May 2012 have been: development of functional ceramics thin films New dielectric materials for advanced microelectronics bio- and CMOS compatible material systems piezoelectric films and nanostructures Atomic Layer Deposition (ALD) of oxides and nitrides characterization and metrology of very thin oxide layers We would like to take this opportunity to thank the Scientific Committee and Local Committee for bringing together a coherent and high quality Symposium at E-MRS 2012 Spring Meeting. Christian Wenger, Jean Fompeyrine, Christophe Vallée and Jean-Pierre Locquet Organizing Committee of Symposium M September 2012

Porous Diblock Copolymer Thin Films in High-Performance Semiconductor Microelectronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Black, C.T.

2011-02-01

The engine fueling more than 40 years of performance improvements in semiconductor integrated circuits (ICs) has been industry's ability to pattern circuit elements at ever-higher resolution and with ever-greater precision. Steady advances in photolithography - the process wherein ultraviolet light chemically changes a photosensitive polymer resist material in order to create a latent image - have resulted in scaling of minimum printed feature sizes from tens of microns during the 1980s to sub-50 nanometer transistor gate lengths in today's state-of-the-art ICs. The history of semiconductor technology scaling as well as future technology requirements is documented in the International Technology Roadmapmore » for Semiconductors (ITRS). The progression of the semiconductor industry to the realm of nanometer-scale sizes has brought enormous challenges to device and circuit fabrication, rendering performance improvements by conventional scaling alone increasingly difficult. Most often this discussion is couched in terms of field effect transistor (FET) feature sizes such as the gate length or gate oxide thickness, however these challenges extend to many other aspects of the IC, including interconnect dimensions and pitch, device packing density, power consumption, and heat dissipation. The ITRS Technology Roadmap forecasts a difficult set of scientific and engineering challenges with no presently-known solutions. The primary focus of this chapter is the research performed at IBM on diblock copolymer films composed of polystyrene (PS) and poly(methyl-methacrylate) (PMMA) (PS-b-PMMA) with total molecular weights M{sub n} in the range of {approx}60K (g/mol) and polydispersities (PD) of {approx}1.1. These materials self assemble to form patterns having feature sizes in the range of 15-20nm. PS-b-PMMA was selected as a self-assembling patterning material due to its compatibility with the semiconductor microelectronics manufacturing infrastructure, as well as the significant body of existing research on understanding its material properties.« less

Materials and processing science: Limits for microelectronics

NASA Astrophysics Data System (ADS)

Rosenberg, R.

1988-09-01

The theme of this talk will be to illustrate examples of technologies that will drive materials and processing sciences to the limit and to describe some of the research being pursued to understand materials interactions which are pervasive to projected structure fabrication. It is to be expected that the future will see a progression to nanostructures where scaling laws will be tested and quantum transport will become more in evidence, to low temperature operation for tighter control and improved performance, to complex vertical profiles where 3D stacking and superlattices will produce denser packing and device flexibility, to faster communication links with optoelectronics, and to compatible packaging technologies. New low temperature processing techniques, such as epitaxy of silicon, PECVD of dielectrics, low temperature high pressure oxidation, silicon-germanium heterostructures, etc., must be combined with shallow metallurgies, new lithographic technologies, maskless patterning, rapid thermal processing (RTP) to produce needed profile control, reduce process incompatibilities and develop new device geometries. Materials interactions are of special consequence for chip substrates and illustrations of work in metal-ceramic and metal-polymer adhesion will be offered.

Twenty-Five Years of Dynamic Growth.

ERIC Educational Resources Information Center

Pipes, Lana

1980-01-01

Discusses developments in instructional technology in the past 25 years in the areas of audio, video, micro-electronics, social evolution, the space race, and living with rapidly changing technology. (CMV)

Modeling biology with HDL languages: a first step toward a genetic design automation tool inspired from microelectronics.

PubMed

Gendrault, Yves; Madec, Morgan; Lallement, Christophe; Haiech, Jacques

2014-04-01

Nowadays, synthetic biology is a hot research topic. Each day, progresses are made to improve the complexity of artificial biological functions in order to tend to complex biodevices and biosystems. Up to now, these systems are handmade by bioengineers, which require strong technical skills and leads to nonreusable development. Besides, scientific fields that share the same design approach, such as microelectronics, have already overcome several issues and designers succeed in building extremely complex systems with many evolved functions. On the other hand, in systems engineering and more specifically in microelectronics, the development of the domain has been promoted by both the improvement of technological processes and electronic design automation tools. The work presented in this paper paves the way for the adaptation of microelectronics design tools to synthetic biology. Considering the similarities and differences between the synthetic biology and microelectronics, the milestones of this adaptation are described. The first one concerns the modeling of biological mechanisms. To do so, a new formalism is proposed, based on an extension of the generalized Kirchhoff laws to biology. This way, a description of all biological mechanisms can be made with languages widely used in microelectronics. Our approach is therefore successfully validated on specific examples drawn from the literature.

West Europe report: Science and technology. FRG: Concept paper on microelectronics, communications technology

NASA Astrophysics Data System (ADS)

1984-07-01

Precisely because the Federal Republic of Germany is a nation with a strong export orientation the capability to develop and apply, with an eye to the market, modern information and communication technologies and microelectronics which provides the basis for them has a very important bearing on the nations competitive position. To attain a leadership position in information technology, the men and women of the FRG must take up the challenge of this technology in terms of training and continuing education as well as in the media and in public life. Industry must agressively seek out markets and engage in international competition and the state must remove existing obstacles and create the kind of conditions that will make its assistance programs most effective. Programs which reflect the government's resolve to meet the challenge of information technology and to help improve the FRG's competitive position in this field are outlined.

Synthetic thermoelectric materials comprising phononic crystals

DOEpatents

El-Kady, Ihab F; Olsson, Roy H; Hopkins, Patrick; Reinke, Charles; Kim, Bongsang

2013-08-13

Synthetic thermoelectric materials comprising phononic crystals can simultaneously have a large Seebeck coefficient, high electrical conductivity, and low thermal conductivity. Such synthetic thermoelectric materials can enable improved thermoelectric devices, such as thermoelectric generators and coolers, with improved performance. Such synthetic thermoelectric materials and devices can be fabricated using techniques that are compatible with standard microelectronics.

Breakthrough: micro-electronic photovoltaics

ScienceCinema

Okandan, Murat; Gupta, Vipin

2018-01-16

Sandia developed tiny glitter-sized photovoltaic (PV) cells that could revolutionize solar energy collection. The crystalline silicon micro-PV cells will be cheaper and have greater efficiencies than current PV collectors. Micro-PV cells require relatively little material to form well-controlled, highly efficient devices. Cell fabrication uses common microelectric and micro-electromechanical systems (MEMS) techniques.

Heuristic method of fabricating counter electrodes in dye-sensitized solar cells based on a PEDOT:PSS layer as a catalytic material

NASA Astrophysics Data System (ADS)

Edalati, Sh; Houshangi far, A.; Torabi, N.; Baneshi, Z.; Behjat, A.

2017-02-01

Poly(3,4-ethylendioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) was deposited on a fluoride-doped tin oxide glass substrate using a heuristic method to fabricate platinum-free counter electrodes for dye-sensitized solar cells (DSSCs). In this heuristic method a thin layer of PEDOT:PPS is obtained by spin coating the PEDOT:PSS on a Cu substrate and then removing the substrate with FeCl3. The characteristics of the deposited PEDOT:PSS were studied by energy dispersive x-ray analysis and scanning electron microscopy, which revealed the micro-electronic specifications of the cathode. The aforementioned DSSCs exhibited a solar conversion efficiency of 3.90%, which is far higher than that of DSSCs with pure PEDOT:PSS (1.89%). This enhancement is attributed not only to the micro-electronic specifications but also to the HNO3 treatment through our heuristic method. The results of cyclic voltammetry, electrochemical impedance spectroscopy (EIS) and Tafel polarization plots show the modified cathode has a dual function, including excellent conductivity and electrocatalytic activity for iodine reduction.

Thin film microelectronics materials production in the vacuum of space

NASA Astrophysics Data System (ADS)

Ignatiev, A.; Sterling, M.; Horton, C.; Freundlich, A.; Pei, S.; Hill, R.

1997-01-01

The international Space Station era will open up a new dimension in the use of one of the unique attributes of space, vacuum, for the production of advanced semiconductor materials and devices for microelectronics applications. Ultra-vacuum is required for the fabrication in thin film form of high quality semiconductors. This can be accomplished behind a free flying platform similar to the current Wake Shield Facility which is specifically designed to support in-space production. The platform will require apparatus for thin film growth, a robotics interface to allow for the change out of raw materials and the harvesting of finished product, and a servicing plant incorporating Space Station that will support long-term utilization of the platform.

Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelecronic devices

PubMed Central

Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M.; Calzada, M. Lourdes

2016-01-01

Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound ─ morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT) ─ are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm−2 is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics. PMID:26837240

Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microeletronic [corrected] devices.

PubMed

Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M; Calzada, M Lourdes

2016-02-03

Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound--morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT)--are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm(-2) is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics.

Epoxy bond and stop etch fabrication method

DOEpatents

Simmons, Jerry A.; Weckwerth, Mark V.; Baca, Wes E.

2000-01-01

A class of epoxy bond and stop etch (EBASE) microelectronic fabrication techniques is disclosed. The essence of such techniques is to grow circuit components on top of a stop etch layer grown on a first substrate. The first substrate and a host substrate are then bonded together so that the circuit components are attached to the host substrate by the bonding agent. The first substrate is then removed, e.g., by a chemical or physical etching process to which the stop etch layer is resistant. EBASE fabrication methods allow access to regions of a device structure which are usually blocked by the presence of a substrate, and are of particular utility in the fabrication of ultrafast electronic and optoelectronic devices and circuits.

High Technology and Job Loss.

ERIC Educational Resources Information Center

Rumberger, Russell

Job loss through technological advancement, particularly technologies based on microelectronics, is increasing for all economic sectors in a nation already hard challenged in world and domestic markets for goods and services. But assessing technology's employment impact remains difficult not only because of its direct and indirect effects and…

An 11-bit 200 MS/s subrange SAR ADC with low-cost integrated reference buffer

NASA Astrophysics Data System (ADS)

He, Xiuju; Gu, Xian; Li, Weitao; Jiang, Hanjun; Li, Fule; Wang, Zhihua

2017-10-01

This paper presents an 11-bit 200 MS/s subrange SAR ADC with an integrated reference buffer in 65 nm CMOS. The proposed ADC employs a 3.5-bit flash ADC for coarse conversion, and a compact timing scheme at the flash/SAR boundary to speed up the conversion. The flash decision is used to control charge compensating for the reference voltage to reduce its input-dependent fluctuation. Measurement results show that the fabricated ADC has achieved significant improvement by applying the reference charge compensation. In addition, the ADC achieves a maximum signal-to-noise-and-distortion ratio of 59.3 dB at 200 MS/s. It consumes 3.91 mW from a 1.2 V supply, including the reference buffer. Project supported by the Zhongxing Telecommunication Equipment Corporation and Beijing Microelectronics Technology Institute.

Direct Prototyping of Patterned Nanoporous Carbon: A Route from Materials to On-chip Devices

PubMed Central

Shen, Caiwei; Wang, Xiaohong; Zhang, Wenfeng; Kang, Feiyu

2013-01-01

Prototyping of nanoporous carbon membranes with three-dimensional microscale patterns is significant for integration of such multifunctional materials into various miniaturized systems. Incorporating nano material synthesis into microelectronics technology, we present a novel approach to direct prototyping of carbon membranes with highly nanoporous structures inside. Membranes with significant thicknesses (1 ~ 40 μm) are rapidly prototyped at wafer level by combining nano templating method with readily available microfabrication techniques, which include photolithography, high-temperature annealing and etching. In particular, the high-surface-area membranes are specified as three-dimensional electrodes for micro supercapacitors and show high performance compared to reported ones. Improvements in scalability, compatibility and cost make the general strategy promising for batch fabrication of operational on-chip devices or full integration of three-dimensional nanoporous membranes with existing micro systems. PMID:23887486

Microelectronics and nanotechnology, and the fractal-like structure of information, knowledge, and science

NASA Astrophysics Data System (ADS)

Nutu, Catalin Silviu; Axinte, Tiberiu

2016-12-01

The article is centralizing and is concentrating the information from a considerable amount of papers related to the field of microelectronics and nanotechnology and also provides an approach to science and to the future evolution of science, based on the theory of the fractals. The new science of microelectronics and nanotechnology is one of the best examples of how the science of future will look like, namely at the confluence of increasingly more other sciences, where increasingly more sciences are to be added in the structure of the new science and the role of the multidisciplinary and interdisciplinary is becoming more and more important. Although not giving explicit details (e.g. specific formulas) the theory of fractals is used in the paper to explain the way of generation of new science for the specific case of microelectronics and nanotechnology, but is also used in the paper to outline a different way to approach new science and eventually to approach new sciences to come. There are mainly two motivations for the present article, namely: on the one hand, the position of the microelectronics and nanotechnologies in the fractal-like structure of science, and, on the other hand, that much of the communication, information, knowledge and science transfer, dissemination and advancement in sciences are taking place using the new technologies related to microelectronics and nanotechnologies.

Development Of A Three-Dimensional Circuit Integration Technology And Computer Architecture

NASA Astrophysics Data System (ADS)

Etchells, R. D.; Grinberg, J.; Nudd, G. R.

1981-12-01

This paper is the first of a series 1,2,3 describing a range of efforts at Hughes Research Laboratories, which are collectively referred to as "Three-Dimensional Microelectronics." The technology being developed is a combination of a unique circuit fabrication/packaging technology and a novel processing architecture. The packaging technology greatly reduces the parasitic impedances associated with signal-routing in complex VLSI structures, while simultaneously allowing circuit densities orders of magnitude higher than the current state-of-the-art. When combined with the 3-D processor architecture, the resulting machine exhibits a one- to two-order of magnitude simultaneous improvement over current state-of-the-art machines in the three areas of processing speed, power consumption, and physical volume. The 3-D architecture is essentially that commonly referred to as a "cellular array", with the ultimate implementation having as many as 512 x 512 processors working in parallel. The three-dimensional nature of the assembled machine arises from the fact that the chips containing the active circuitry of the processor are stacked on top of each other. In this structure, electrical signals are passed vertically through the chips via thermomigrated aluminum feedthroughs. Signals are passed between adjacent chips by micro-interconnects. This discussion presents a broad view of the total effort, as well as a more detailed treatment of the fabrication and packaging technologies themselves. The results of performance simulations of the completed 3-D processor executing a variety of algorithms are also presented. Of particular pertinence to the interests of the focal-plane array community is the simulation of the UNICORNS nonuniformity correction algorithms as executed by the 3-D architecture.

Flight Experiments for Living With a Star Space Environment Testbed (LWS-SET): Relationship to Technology

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Barth, Janet L.; Brewer, Dana A.

2003-01-01

This viewgraph presentation provides information on flight validation experiments for technologies to determine solar effects. The experiments are intended to demonstrate tolerance to a solar variant environment. The technologies tested are microelectronics, photonics, materials, and sensors.

Self-healable electrically conducting wires for wearable microelectronics.

PubMed

Sun, Hao; You, Xiao; Jiang, Yishu; Guan, Guozhen; Fang, Xin; Deng, Jue; Chen, Peining; Luo, Yongfeng; Peng, Huisheng

2014-09-01

Electrically conducting wires play a critical role in the advancement of modern electronics and in particular are an important key to the development of next-generation wearable microelectronics. However, the thin conducting wires can easily break during use, and the whole device fails to function as a result. Herein, a new family of high-performance conducting wires that can self-heal after breaking has been developed by wrapping sheets of aligned carbon nanotubes around polymer fibers. The aligned carbon nanotubes offer an effective strategy for the self-healing of the electric conductivity, whereas the polymer fiber recovers its mechanical strength. A self-healable wire-shaped supercapacitor fabricated from a wire electrode of this type maintained a high capacitance after breaking and self-healing. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Heterogeneous Integration Technology

DTIC Science & Technology

2017-05-19

Distribution A. Approved for public release; distribution unlimited. (APRS-RY-17-0383) Heterogeneous Integration Technology Dr. Burhan...2013 and 2015 [4]. ...................................... 9 Figure 3: 3D integration of similar or diverse technology components follows More Moore and...10 Figure 4: Many different technologies are used in the implementation of modern microelectronics systems can benefit from

Advancing MEMS Technology Usage through the MUMPS (Multi-User MEMS Processes) Program

NASA Technical Reports Server (NTRS)

Koester, D. A.; Markus, K. W.; Dhuler, V.; Mahadevan, R.; Cowen, A.

1995-01-01

In order to help provide access to advanced micro-electro-mechanical systems (MEMS) technologies and lower the barriers for both industry and academia, the Microelectronic Center of North Carolina (MCNC) and ARPA have developed a program which provides users with access to both MEMS processes and advanced electronic integration techniques. The four distinct aspects of this program, the multi-user MEMS processes (MUMP's), the consolidated micro-mechanical element library, smart MEMS, and the MEMS technology network are described in this paper. MUMP's is an ARPA-supported program created to provide inexpensive access to MEMS technology in a multi-user environment. It is both a proof-of-concept and educational tool that aids in the development of MEMS in the domestic community. MUMP's technologies currently include a 3-layer poly-silicon surface micromachining process and LIGA (lithography, electroforming, and injection molding) processes that provide reasonable design flexibility within set guidelines. The consolidated micromechanical element library (CaMEL) is a library of active and passive MEMS structures that can be downloaded by the MEMS community via the internet. Smart MEMS is the development of advanced electronics integration techniques for MEMS through the application of flip chip technology. The MEMS technology network (TechNet) is a menu of standard substrates and MEMS fabrication processes that can be purchased and combined to create unique process flows. TechNet provides the MEMS community greater flexibility and enhanced technology accessibility.

Silicon-based optoelectronics: Monolithic integration for WDM

NASA Astrophysics Data System (ADS)

Pearson, Matthew Richard T.

2000-10-01

This thesis details the development of enabling technologies required for inexpensive, monolithic integration of Si-based wavelength division multiplexing (WDM) components and photodetectors. The work involves the design and fabrication of arrayed waveguide grating demultiplexers in silicon-on-insulator (SOI), the development of advanced SiGe photodetectors capable of photodetection at 1.55 mum wavelengths, and the development of a low cost fabrication technique that enables the high volume production of Si-based photonic components. Arrayed waveguide grating (AWG) demultiplexers were designed and fabricated in SOI. The fabrication of AWGs in SOI has been reported in the literature, however there are a number of design issues specific to the SOI material system that can have a large effect on device performance and design, and have not been theoretically examined in earlier work. The SOI AWGs presented in this thesis are the smallest devices of this type reported, and they exhibit performance acceptable for commercial applications. The SiGe photodetectors reported in the literature exhibit extremely low responsivities at wavelengths near 1.55 mum. We present the first use of three dimensional growth modes to enhance the photoresponse of SiGe at 1.55 mum wavelengths. Metal semiconductor-metal (MSM) photodetectors were fabricated using this undulating quantum well structure, and demonstrate the highest responsivities yet reported for a SiGe-based photodetector at 1.55 mum. These detectors were monolithically integrated with low-loss SOI waveguides, enabling integration with nearly any Si-based passive WDM component. The pursuit of inexpensive Si-based photonic components also requires the development of new manufacturing techniques that are more suitable for high volume production. This thesis presents the development of a low cost fabrication technique based on the local oxidation of silicon (LOCOS), a standard processing technique used for Si integrated circuits. This process is developed for both SiGe and SOI waveguides, but is shown to be commercially suitable only for SOI waveguide devices. The technique allows nearly any Si microelectronics fabrication facility to begin manufacturing optical components with minimal change in processing equipment or techniques. These enabling technologies provide the critical elements for inexpensive, monolithic integration in a Si-based system.

Thick resist for MEMS processing

NASA Astrophysics Data System (ADS)

Brown, Joe; Hamel, Clifford

2001-11-01

The need for technical innovation is always present in today's economy. Microfabrication methods have evolved in support of the demand for smaller and faster integrated circuits with price performance improvements always in the scope of the manufacturing design engineer. The dispersion of processing technology spans well beyond IC fabrication today with batch fabrication and wafer scale processing lending advantages to MEMES applications from biotechnology to consumer electronics from oil exploration to aerospace. Today the demand for innovative processing techniques that enable technology is apparent where only a few years ago appeared too costly or not reliable. In high volume applications where yield and cost improvements are measured in fractions of a percent it is imperative to have process technologies that produce consistent results. Only a few years ago thick resist coatings were limited to thickness less than 20 microns. Factors such as uniformity, edge bead and multiple coatings made high volume production impossible. New developments in photoresist formulation combined with advanced coating equipment techniques that closely controls process parameters have enable thick photoresist coatings of 70 microns with acceptable uniformity and edge bead in one pass. Packaging of microelectronic and micromechanical devices is often a significant cost factor and a reliability issue for high volume low cost production. Technologies such as flip- chip assembly provide a solution for cost and reliability improvements over wire bond techniques. The processing for such technology demands dimensional control and presents a significant cost savings if it were compatible with mainstream technologies. Thick photoresist layers, with good sidewall control would allow wafer-bumping technologies to penetrate the barriers to yield and production where costs for technology are the overriding issue. Single pass processing is paramount to the manufacturability of packaging technology. Uniformity and edge bead control defined the success of process implementation. Today advanced packaging solutions are created with thick photoresist coatings. The techniques and results will be presented.

VLSI Technology: Impact and Promise. Identifying Emerging Issues and Trends in Technology for Special Education.

ERIC Educational Resources Information Center

Bayoumi, Magdy

As part of a 3-year study to identify emerging issues and trends in technology for special education, this paper addresses the implications of very large scale integrated (VLSI) technology. The first section reviews the development of educational technology, particularly microelectronics technology, from the 1950s to the present. The implications…

Material Selection for Microchannel Heatsink: Conjugate Heat Transfer Simulation

NASA Astrophysics Data System (ADS)

Uday Kumar, A.; Javed, Arshad; Dubey, Satish K.

2018-04-01

Heat dissipation during the operation of electronic devices causes rise in temperature, which demands an effective thermal management for their performance, life and reliability. Single phase liquid cooling in microchannels is an effective and proven technology for electronics cooling. However, due to the ongoing trends of miniaturization and developments in the microelectronics technology, the future needs of heat flux dissipation rate are expected to rise to 1 kW/cm2. Air cooled systems are unable to meet this demand. Hence, liquid cooled heatsinks are preferred. This paper presents conjugate heat transfer simulation of single phase flow in microchannels with application to electronic cooling. The numerical model is simulated for different materials: copper, aluminium and silicon as solid and water as liquid coolant. The performances of microchannel heatsink are analysed for mass flow rate range of 20-40 ml/min. The investigation has been carried out on same size of electronic chip and heat flux in order to have comparative study of different materials. This paper is divided into two sections: fabrication techniques and numerical simulation for different materials. In the first part, a brief discussion of fabrication techniques of microchannel heatsink have been presented. The second section presents conjugate heat transfer simulation and parametric investigation for different material microchannel heatsink. The presented study and findings are useful for selection of materials for microchannel heatsink.

Development and ESCC evaluation of a monolithic silicon phototransistor array for optical encoders

NASA Astrophysics Data System (ADS)

Bregoli, M.; Ceriani, S.; Erspan, M.; Collini, A.; Ficorella, F.; Giacomini, G.; Bellutti, P.; How, L. S.; Hernandez, S.; Lundmark, K.

2017-11-01

Optoelettronica Italia Srl, better known as Optoi, is an Italian Company dealing with optoelectronics and microelectronics and focusing on back-end technologies. The growing volume of activities concerning the aerospace field has recently brought to the creation of a company unit, with collaborations with ESA, CNES and ASI. In this context, Optoi's key partner for the microelectronic front-end is Fondazione Bruno Kessler (FBK) and specifically its Micro Nano Facility (MNF).

Panel I: Technology and Jobs.

ERIC Educational Resources Information Center

Appalachia, 1984

1984-01-01

Panel I features two case histories of state government, university, and private corporation cooperation to bring technology to the workplace (Microelectronics Center of North Carolina and Ben Franklin Partnership Program) and presentations about Burlington Industries and General Electric Company investments in technology to save jobs and boost…

Resources in Technology.

ERIC Educational Resources Information Center

McCrory, David L.; Maughan, George R.

This document--intended for secondary school and college students--contains technology education instructional units on engines and power, energy conversion, energy futures, energy sources, communication and society, energy and power in communication, communication systems, microelectronics in communication, transportation in society, energy and…

Fundamental Insight on Developing Low Dielectric Constant Polyimides

NASA Technical Reports Server (NTRS)

Simpson, J. O.; SaintClair, A. K.

1997-01-01

Thermally stable, durable, insulative polyimides are in great demand for the fabrication of microelectronic devices. In this investigation dielectric and optical properties have been studied for several series of aromatic polyimides. The effect of polarizability, fluorine content, and free volume on dielectric constant was examined. In general, minimizing polarizability, maximizing free volume and fluorination all lowered dielectric constants in the polyimides studied.

Research Activities at Plasma Research Laboratory at NASA Ames Research Center

NASA Technical Reports Server (NTRS)

Sharma, S. P.; Rao, M. V. V. S.; Meyyappan, Meyya

2000-01-01

In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies are being developed at NASA-Ames Research Center using a multi-discipline approach. The first step is to understand the basic physics of the chemical reactions in the area of plasma reactors and processes. Low pressure glow discharges are indispensable in the fabrication of microelectronic circuits. These plasmas are used to deposit materials and also etch fine features in device fabrication. However, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Although a great deal of laboratory-scale research has been performed on many of these processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. Our present research involves the study of such plasmas. An inductively-coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics. This ICP source generates plasmas with higher electron densities and lower operating pressures than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The research goal is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas phase and surface reaction rates, species concentration, temperature, ion energy distribution, and electron number density.

Soft lithography using perfluorinated polyether molds and PRINT technology for fabrication of 3-D arrays on glass substrates

NASA Astrophysics Data System (ADS)

Wiles, Kenton B.; Wiles, Natasha S.; Herlihy, Kevin P.; Maynor, Benjamin W.; Rolland, Jason P.; DeSimone, Joseph M.

2006-03-01

The fabrication of nanometer size structures and complex devices for microelectronics is of increasing importance so as to meet the challenges of large-scale commercial applications. Soft lithography typically employs elastomeric polydimethylsiloxane (PDMS) molds to replicate micro- and nanoscale features. However, the difficulties of PDMS for nanoscale fabrication include inherent incompatibility with organic liquids and the production of a residual scum or flash layer that link features where the nano-structures meet the substrate. An emerging technologically advanced technique known as Pattern Replication in Non-wetting Templates (PRINT) avoids both of these dilemmas by utilizing photocurable perfluorinated polyether (PFPE) rather than PDMS as the elastomeric molding material. PFPE is a liquid at room temperature that exhibits low modulus and high gas permeability when cured. The highly fluorinated PFPE material allows for resistance to swelling by organic liquids and very low surface energies, thereby preventing flash layer formation and ease of separation of PFPE molds from the substrates. These enhanced characteristics enable easy removal of the stamp from the molded material, thereby minimizing damage to the nanoscale features. Herein we describe that PRINT can be operated in two different modes depending on whether the objects to be molded are to be removed and harvested (i.e. to make shape specific organic particles) or whether scum free objects are desired which are adhered onto the substrate (i.e. for scum free pattern generation using imprint lithography). The former can be achieved using a non-reactive, low surface energy substrate (PRINT: Particle Replication in Non-wetting Templates) and the latter can be achieved using a reactive, low surface energy substrate (PRINT: Pattern Replication in Non-wetting Templates). We show that the PRINT technology can been used to fabricate nano-particle arrays covalently bound to a glass substrate with no scum layer. The nanometer size arrays were fabricated using a PFPE mold and a self-assembled monolayer (SAM) fluorinated glass substrate that was also functionalized with free-radically reactive SAM methacrylate moieties. The molded polymeric materials were covalently bound to the glass substrate through thermal curing with the methacrylate groups to permit three dimensional array fabrication. The low surface energies of the PFPE mold and fluorinated glass substrate allowed for no flash layer formation, permitting well resolved structures.

Electrodeposition of Gold to Conformally Fill High Aspect Ratio Nanometric Silicon Grating Trenches: A Comparison of Pulsed and Direct Current Protocols

PubMed Central

Znati, Sami A.; Chedid, Nicholas; Miao, Houxun; Chen, Lei; Bennett, Eric E.; Wen, Han

2016-01-01

Filling high-aspect-ratio trenches with gold is a frequent requirement in the fabrication of x-ray optics as well as micro-electronic components and other fabrication processes. Conformal electrodeposition of gold in sub-micron-width silicon trenches with an aspect ratio greater than 35 over a grating area of several square centimeters is challenging and has not been described in the literature previously. A comparison of pulsed plating and constant current plating led to a gold electroplating protocol that reliably filled trenches for such structures. PMID:27042384

Delidding and resealing hybrid microelectronic packages

NASA Astrophysics Data System (ADS)

Luce, W. F.

1982-05-01

The objective of this single phase MM and T contract was to develop the manufacturing technology necessary for the precision removal (delidding) and replacement (resealing) of covers on hermetically sealed hybrid microelectronic packages. The equipment and processes developed provide a rework technique which does not degrade the reliability of the package of the enclosed circuitry. A qualification test was conducted on 88 functional hybrid packages, with excellent results. A petition will be filed, accompanied by this report, requesting Mil-M-38510 be amended to allow this rework method.

Effects of rapid thermal annealing on crystallinity and Sn surface segregation of {{Ge}}_{1-{\\boldsymbol{x}}}{{Sn}}_{{\\boldsymbol{x}}} films on Si (100) and Si (111)

NASA Astrophysics Data System (ADS)

Miao, Yuan-Hao; Hu, Hui-Yong; Song, Jian-Jun; Xuan, Rong-Xi; Zhang, He-Ming

2017-12-01

Not Available Project supported by the National Natural Science Foundation of China (Grant Nos. 61474085 and 61704130), the Science Research Plan in Shaanxi Province, China (Grant No. 2016GY-085), the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (Grant No. 90109162905), and the Fundamental Research Funds for the Central Universities, China (Grant No. 61704130).

Displacement Damage Effects in Solar Cells: Mining Damage From the Microelectronics and Photonics Test Bed Space Experiment

NASA Technical Reports Server (NTRS)

Hardage, Donna (Technical Monitor); Walters, R. J.; Morton, T. L.; Messenger, S. R.

2004-01-01

The objective is to develop an improved space solar cell radiation response analysis capability and to produce a computer modeling tool which implements the analysis. This was accomplished through analysis of solar cell flight data taken on the Microelectronics and Photonics Test Bed experiment. This effort specifically addresses issues related to rapid technological change in the area of solar cells for space applications in order to enhance system performance, decrease risk, and reduce cost for future missions.

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics.

PubMed

Rao, Sandro; Pangallo, Giovanni; Della Corte, Francesco Giuseppe

2016-01-06

Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34-40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

Hybrid electro-optical nanosystem for neurons investigation

NASA Astrophysics Data System (ADS)

Miu, Mihaela; Kleps, Irina; Craciunoiu, Florea; Simion, Monica; Bragaru, Adina; Ignat, Teodora

2010-11-01

The scope of this paper is development of a new laboratory-on-a-chip (LOC) device for biomedical studies consisting of a microfluidic system coupled to microelectronic/optical transducers with nanometric features, commonly called biosensors. The proposed device is a hybrid system with sensing element on silicon (Si) chip and microfluidic system on polydimethylsiloxane (PDMS) substrates, taking into accounts their particular advantages. Different types of nanoelectrode arrays, positioned in the reactor, have been investigated as sensitive elements for electrical detection and the recording of neuron extracellular electric activity has been monitorized in parallel with whole-cell patch-clamp membrane current. Moreover, using an additional porosification process the sensing element became efficient for optical detection also. The preliminary test results demonstrate the functionality of the proposed design and also the fabrication technology, the devices bringing advantages in terms enhancement of sensitivity in both optoelectronic detection schemes.

Educational Technology in the Crystal Ball.

ERIC Educational Resources Information Center

Langham-Johnson, Shirley

This paper predicts that microelectronic circuitry will have an impact on education comparable to that of the industrial revolution or the invention of the printing press. Present conditions influencing educational technology and trends are considered in light of five considerations: (1) recent redefinitions of what educational technology is; (2)…

Nanocharacterization Challenges in a Changing Microelectronics Landscape

NASA Astrophysics Data System (ADS)

Brilloüt, Michel

2011-11-01

As the microelectronics industry enters the "nano"-era new challenges emerge. Traditional scaling of the MOS transistor faces major obstacles in fulfilling "Moore's law". New features like strain and new materials (e.g. high k—metal gate stack) are introduced in order to sustain performance increases. For a better electrostatic control, devices will use the third dimension, e.g., in gate-all-around nanowire structures. Due to the escalating cost and complexity of sub-28 nm technologies fewer industrial players can afford the development and production of advanced CMOS processes and many companies acknowledge the fact that the value in products can also be obtained in using more diversified non-digital technologies (the so-called "More-than-Moore" domain). This evolving landscape brings new requirements—discussed in this paper—in terms of physical characterization of technologies and devices.

Evaluation of advanced microelectronic fluxless solder-bump contacts for hybrid microcircuits

NASA Technical Reports Server (NTRS)

Mandal, R. P.

1976-01-01

Technology for interconnecting monolithic integrated circuit chips with other components is investigated. The advantages and disadvantages of the current flip-chip approach as compared to other interconnection methods are outlined. A fluxless solder-bump contact technology is evaluated. Multiple solder-bump contacts were formed on silicon integrated circuit chips. The solder-bumps, comprised of a rigid nickel under layer and a compliant solder overlayer, were electroformed onto gold device pads with the aid of thick dry film photomasks. Different solder alloys and the use of conductive epoxy for bonding were explored. Fluxless solder-bump bond quality and reliability were evaluated by measuring the effects of centrifuge, thermal cycling, and high temperature storage on bond visual characteristics, bond electrical continuity, and bond shear tests. The applicability and suitability of this technology for hybrid microelectronic packaging is discussed.

Scaled CMOS Technology Reliability Users Guide

NASA Technical Reports Server (NTRS)

White, Mark

2010-01-01

The desire to assess the reliability of emerging scaled microelectronics technologies through faster reliability trials and more accurate acceleration models is the precursor for further research and experimentation in this relevant field. The effect of semiconductor scaling on microelectronics product reliability is an important aspect to the high reliability application user. From the perspective of a customer or user, who in many cases must deal with very limited, if any, manufacturer's reliability data to assess the product for a highly-reliable application, product-level testing is critical in the characterization and reliability assessment of advanced nanometer semiconductor scaling effects on microelectronics reliability. A methodology on how to accomplish this and techniques for deriving the expected product-level reliability on commercial memory products are provided.Competing mechanism theory and the multiple failure mechanism model are applied to the experimental results of scaled SDRAM products. Accelerated stress testing at multiple conditions is applied at the product level of several scaled memory products to assess the performance degradation and product reliability. Acceleration models are derived for each case. For several scaled SDRAM products, retention time degradation is studied and two distinct soft error populations are observed with each technology generation: early breakdown, characterized by randomly distributed weak bits with Weibull slope (beta)=1, and a main population breakdown with an increasing failure rate. Retention time soft error rates are calculated and a multiple failure mechanism acceleration model with parameters is derived for each technology. Defect densities are calculated and reflect a decreasing trend in the percentage of random defective bits for each successive product generation. A normalized soft error failure rate of the memory data retention time in FIT/Gb and FIT/cm2 for several scaled SDRAM generations is presented revealing a power relationship. General models describing the soft error rates across scaled product generations are presented. The analysis methodology may be applied to other scaled microelectronic products and their key parameters.

Laser-induced forward transfer for flip-chip packaging of single dies.

PubMed

Kaur, Kamal S; Van Steenberge, Geert

2015-03-20

Flip-chip (FC) packaging is a key technology for realizing high performance, ultra-miniaturized and high-density circuits in the micro-electronics industry. In this technique the chip and/or the substrate is bumped and the two are bonded via these conductive bumps. Many bumping techniques have been developed and intensively investigated since the introduction of the FC technology in 1960(1) such as stencil printing, stud bumping, evaporation and electroless/electroplating2. Despite the progress that these methods have made they all suffer from one or more than one drawbacks that need to be addressed such as cost, complex processing steps, high processing temperatures, manufacturing time and most importantly the lack of flexibility. In this paper, we demonstrate a simple and cost-effective laser-based bump forming technique known as Laser-induced Forward Transfer (LIFT)3. Using the LIFT technique a wide range of bump materials can be printed in a single-step with great flexibility, high speed and accuracy at RT. In addition, LIFT enables the bumping and bonding down to chip-scale, which is critical for fabricating ultra-miniature circuitry.

Science and Technological Innovation.

ERIC Educational Resources Information Center

Braun, Ernest

1979-01-01

This article is based on a presentation at the 1979 conference of the Education Group of The Institute of Physics which was held in Cambridge, England. It discusses the interaction between science and technological innovation using a historical approach: the development of microelectronics. (HM)

Information Retrieval Research and ESPRIT.

ERIC Educational Resources Information Center

Smeaton, Alan F.

1987-01-01

Describes the European Strategic Programme of Research and Development in Information Technology (ESPRIT), and its five programs: advanced microelectronics, software technology, advanced information processing, office systems, and computer integrated manufacturing. The emphasis on logic programming and ESPRIT as the European response to the…

Limits in point to point resolution of MOS based pixels detector arrays

NASA Astrophysics Data System (ADS)

Fourches, N.; Desforge, D.; Kebbiri, M.; Kumar, V.; Serruys, Y.; Gutierrez, G.; Leprêtre, F.; Jomard, F.

2018-01-01

In high energy physics point-to-point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors, can reach a 5-μm limit, this limit being based on statistical measurements, with a pixel-pitch in the 10 μm range. This paper is devoted to the evaluation of the building blocks for use in pixel arrays enabling accurate tracking of charged particles. Basing us on simulations we will make here a quantitative evaluation of the physical and technological limits in pixel size. Attempts to design small pixels based on SOI technology will be briefly recalled here. A design based on CMOS compatible technologies that allow a reduction of the pixel size below the micrometer is introduced here. Its physical principle relies on a buried carrier-localizing collecting gate. The fabrication process needed by this pixel design can be based on existing process steps used in silicon microelectronics. The pixel characteristics will be discussed as well as the design of pixel arrays. The existing bottlenecks and how to overcome them will be discussed in the light of recent ion implantation and material characterization experiments.

Engineering Research and Development and Technology thrust area report FY92

DOE Office of Scientific and Technical Information (OSTI.GOV)

Langland, R.T.; Minichino, C.

1993-03-01

The mission of the Engineering Research, Development, and Technology Program at Lawrence Livermore National Laboratory (LLNL) is to develop the technical staff and the technology needed to support current and future LLNL programs. To accomplish this mission, the Engineering Research, Development, and Technology Program has two important goals: (1) to identify key technologies and (2) to conduct high-quality work to enhance our capabilities in these key technologies. To help focus our efforts, we identify technology thrust areas and select technical leaders for each area. The thrust areas are integrated engineering activities and, rather than being based on individual disciplines, theymore » are staffed by personnel from Electronics Engineering, Mechanical Engineering, and other LLNL organizations, as appropriate. The thrust area leaders are expected to establish strong links to LLNL program leaders and to industry; to use outside and inside experts to review the quality and direction of the work; to use university contacts to supplement and complement their efforts; and to be certain that we are not duplicating the work of others. This annual report, organized by thrust area, describes activities conducted within the Program for the fiscal year 1992. Its intent is to provide timely summaries of objectives, theories, methods, and results. The nine thrust areas for this fiscal year are: Computational Electronics and Electromagnetics; Computational Mechanics; Diagnostics and Microelectronics; Emerging Technologies; Fabrication Technology; Materials Science and Engineering; Microwave and Pulsed Power; Nondestructive Evaluation; and Remote Sensing and Imaging, and Signal Engineering.« less

Advanced Electronic Technology

DTIC Science & Technology

1977-11-15

Electronics 15 III. Materials Research 15 TV. Microelectronics 16 V. Surface- Wave Technology 16 DATA SYSTEMS DIVISION 2 INTRODUCTION This...Processing Digital Voice Processing Packet Speech Wideband Integrated Voice/Data Technology Radar Signal Processing Technology Nuclear Safety Designs...facilities make it possible to track the status of these jobs, retrieve their job control language listings, and direct a copy of printed or punched

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alloatti, L., E-mail: luca.alloatti@gmail.com; Cheian, D.; Ram, R. J.

A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm microelectronics CMOS process. The cavity has a linewidth of 17 GHz and an average wavelength-shift of 9 pm/V in reverse-bias conditions.

Database Management Systems: A Case Study of Faculty of Open Education

ERIC Educational Resources Information Center

Kamisli, Zehra

2004-01-01

We live in the information and the microelectronic age, where technological advancements become a major determinant of our lifestyle. Such advances in technology cannot possibly be made or sustained without concurrent advancement in management systems (5). The impact of computer technology on organizations and society is increasing as new…

Report on High Technology Programs in Illinois Public Community Colleges.

ERIC Educational Resources Information Center

Illinois Community Coll. Board, Springfield.

Survey results are presented from a study of the steps being taken by the 52 Illinois public community colleges to develop and provide programs in high technology fields. First, high technology programs are defined as those occupational programs that educate and train individuals to operate, maintain, and/or repair micro-electronic or computerized…

The Communications Technology Explosion: Now That the School Media Specialist and Everyone Else is a Technologist.

ERIC Educational Resources Information Center

Belland, John C.

1982-01-01

Technological advances in microelectronics-photonics, brain research, and genetic manipulation are discussed, along with their implications for school media programs. Three possible futures for the year 2001 are proffered. Media specialists are urged to adopt only those technologies which truly contribute to efficient management, information…

Microelectronics, radiation, and superconductivity.

PubMed Central

Gochfeld, M

1990-01-01

Among the costs of technology are health hazards that face employees and consumers. New advances in the highly competitive field of microelectronics involve exposure to a variety of hazards such as gallium arsenide. Small high-technology industries appear unprepared to invest in health and safety. Although stray electromagnetic fields are not a new development, researchers are beginning to assemble data indicating that such fields pose a significant cancer risk under certain circumstances. Data have been obtained on fields associated with power lines on the one hand and consumer products on the other. Although not conclusive, the data are sufficient to warrant carefully designed research into the risks posed by electromagnetic fields. Because the scientific issues require research, there is a need to make basic social value decisions that will determine which technologies will be developed and which ones may be set aside because of their danger at the present time. PMID:2401267

Self-assembled nanolaminate coatings (SV)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fan, H.

2012-03-01

Sandia National Laboratories (Sandia) and Lockheed Martin Aeronautics (LM Aero) are collaborating to develop affordable, self-assembled, nanocomposite coatings and associated fabrication processes that will be tailored to Lockheed Martin product requirements. The purpose of this project is to develop a family of self-assembled coatings with properties tailored to specific performance requirements, such as antireflective (AR) optics, using Sandia-developed self-assembled techniques. The project met its objectives by development of a simple and economic self-assembly processes to fabricate multifunctional coatings. Specifically, materials, functionalization methods, and associated coating processes for single layer and multiple layers coatings have been developed to accomplish high reflectivemore » coatings, hydrophobic coatings, and anti-reflective coatings. Associated modeling and simulations have been developed to guide the coating designs for optimum optical performance. The accomplishments result in significant advantages of reduced costs, increased manufacturing freedom/producibility, improved logistics, and the incorporation of new technology solutions not possible with conventional technologies. These self-assembled coatings with tailored properties will significantly address LMC's needs and give LMC a significant competitive lead in new engineered materials. This work complements SNL's LDRD and BES programs aimed at developing multifunctional nanomaterials for microelectronics and optics as well as structure/property investigations of self-assembled nanomaterials. In addition, this project will provide SNL with new opportunities to develop and apply self-assembled nanocomposite optical coatings for use in the wavelength ranges of 3-5 and 8-12 micrometers, ranges of vital importance to military-based sensors and weapons. The SANC technologies will be applied to multiple programs within the LM Company including the F-35, F-22, ADP (Future Strike Bomber, UAV, UCAV, etc.). The SANC technologies will establish LMA and related US manufacturing capability for commercial and military applications therefore reducing reliance on off-shore development and production of related critical technologies. If these technologies are successfully licensed, production of these coatings in manufactory will create significant technical employment opportunities.« less

Synthesis of tin, silver and their alloy nanoparticles for lead-free interconnect applications

NASA Astrophysics Data System (ADS)

Jiang, Hongjin

SnPb solders have long been used as interconnect materials in microelectronic packaging. Due to the health threat of lead to human beings, the use of lead-free interconnect materials is imperative. Three kinds of lead-free interconnect materials are being investigated, namely lead-free metal solders (SnAg, SnAgCu, etc.), electrically conductive adhesives (ECAs) and carbon nanotubes (CNTs). However, there are still limitations for the full utilization of these lead-free interconnect materials in the microelectronic packaging, such as higher melting point of lead-free metal solders, lower electrical conductivity of the ECAs and poor adhesion of CNTs to substrates. This thesis is devoted to the research and development of low processing temperature lead-free interconnect materials for microelectronic packaging applications with an emphasis on fundamental studies of nanoparticles synthesis, dispersion and oxidation prevention, and nanocomposites fabrication. Oxide-free tin (Sn), tin/silver (96.5Sn3.5Ag) and tin/silver/copper (96.5Sn3.0Ag0.5Cu) alloy nanoparticles with different sizes were synthesized by a low temperature chemical reduction method. Both size dependent melting point and latent heat of fusion of the synthesized nanoparticles were obtained. The nano lead-free solder pastes/composites created by dispersing the SnAg or SnAgCu alloy nanoparticles into an acidic type flux spread and wet on the cleaned copper surface at 220 to 230°C. This study demonstrated the feasibility of nano sized SnAg or SnAgCu alloy particle pastes for low processing temperature lead-free interconnect applications in microelectronic packaging.

Space, Atmospheric, and Terrestrial Radiation Environments

NASA Technical Reports Server (NTRS)

Barth, Janet L.; Dyer, C. S.; Stassinopoulos, E. G.

2003-01-01

The progress on developing models of the radiation environment since the 1960s is reviewed with emphasis on models that can be applied to predicting the performance of microelectronics used in spacecraft and instruments. Space, atmospheric, and ground environments are included. It is shown that models must be adapted continually to account for increased understanding of the dynamics of the radiation environment and the changes in microelectronics technology. The IEEE Nuclear and Space Radiation Effects Conference is a vital forum to report model progress to the radiation effects research community.

Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

NASA Astrophysics Data System (ADS)

Olejník, K.; Schuler, V.; Marti, X.; Novák, V.; Kašpar, Z.; Wadley, P.; Campion, R. P.; Edmonds, K. W.; Gallagher, B. L.; Garces, J.; Baumgartner, M.; Gambardella, P.; Jungwirth, T.

2017-05-01

Antiferromagnets offer a unique combination of properties including the radiation and magnetic field hardness, the absence of stray magnetic fields, and the spin-dynamics frequency scale in terahertz. Recent experiments have demonstrated that relativistic spin-orbit torques can provide the means for an efficient electric control of antiferromagnetic moments. Here we show that elementary-shape memory cells fabricated from a single-layer antiferromagnet CuMnAs deposited on a III-V or Si substrate have deterministic multi-level switching characteristics. They allow for counting and recording thousands of input pulses and responding to pulses of lengths downscaled to hundreds of picoseconds. To demonstrate the compatibility with common microelectronic circuitry, we implemented the antiferromagnetic bit cell in a standard printed circuit board managed and powered at ambient conditions by a computer via a USB interface. Our results open a path towards specialized embedded memory-logic applications and ultra-fast components based on antiferromagnets.

Two different ways for waveguides and optoelectronics components on top of C-MOS

NASA Astrophysics Data System (ADS)

Fedeli, J. M.; Jeannot, S.; Kostrzewa, M.; Di Cioccio, L.; Jousseaume, V.; Orobtchouk, R.; Maury, P.; Zussy, M.

2006-02-01

While fabrication of photonic components at the wafer level is a long standing goal of integrated optics, new applications such as optical interconnects are introducing new challenges for waveguides and optoelectronic component fabrication. Indeed, global interconnects are expected to face severe limitations in the near future. To face this problem, optical links on top of a CMOS circuits could be an alternative. The critical points to perform an optical link on a chip are firstly the realization of compact passive optical distribution and secondly the report of optoelectronic components for the sources and detectors. This paper presents two different approaches for the integration of both waveguides and optoelectronic components. In a first "total bonding" approach, waveguides have been elaborated using classical "Silicon On Insulators" technology and then reported using molecular bonding on top off Si wafers. The S0I substrate was then chemically etched, after what InP dies were moleculary bonded on top of the waveguides. With this approach, optical components with low loses and a good equilibrium are demonsrated. Using molecular bonding, InP dies were reported with no degradation of the optoelectronic properties of the films. In a second approach, using PECVD silicon nitride or amorphous silicon coupled to PECVD silicon oxide, basic optical components are demonstrated. This low temperature technology is compatible with a microelectronic Back End process, allowing an integration of the waveguides directly on top of CMOS circuits. InP dies can then be bonded on top of the waveguides.

Use of chemical-mechanical polishing for fabricating photonic bandgap structures

DOEpatents

Fleming, James G.; Lin, Shawn-Yu; Hetherington, Dale L.; Smith, Bradley K.

1999-01-01

A method is disclosed for fabricating a two- or three-dimensional photonic bandgap structure (also termed a photonic crystal, photonic lattice, or photonic dielectric structure). The method uses microelectronic integrated circuit (IC) processes to fabricate the photonic bandgap structure directly upon a silicon substrate. One or more layers of arrayed elements used to form the structure are deposited and patterned, with chemical-mechanical polishing being used to planarize each layer for uniformity and a precise vertical tolerancing of the layer. The use of chemical-mechanical planarization allows the photonic bandgap structure to be formed over a large area with a layer uniformity of about two-percent. Air-gap photonic bandgap structures can also be formed by removing a spacer material separating the arrayed elements by selective etching. The method is useful for fabricating photonic bandgap structures including Fabry-Perot resonators and optical filters for use at wavelengths in the range of about 0.2-20 .mu.m.

A top-down approach for fabricating three-dimensional closed hollow nanostructures with permeable thin metal walls.

PubMed

Barrios, Carlos Angulo; Canalejas-Tejero, Víctor

2017-01-01

We report on a top-down method for the controlled fabrication of three-dimensional (3D), closed, thin-shelled, hollow nanostructures (nanocages) on planar supports. The presented approach is based on conventional microelectronic fabrication processes and exploits the permeability of thin metal films to hollow-out polymer-filled metal nanocages through an oxygen-plasma process. The technique is used for fabricating arrays of cylindrical nanocages made of thin Al shells on silicon substrates. This hollow metal configuration features optical resonance as revealed by spectral reflectance measurements and numerical simulations. The fabricated nanocages were demonstrated as a refractometric sensor with a measured bulk sensitivity of 327 nm/refractive index unit (RIU). The pattern design flexibility and controllability offered by top-down nanofabrication techniques opens the door to the possibility of massive integration of these hollow 3D nano-objects on a chip for applications such as nanocontainers, nanoreactors, nanofluidics, nano-biosensors and photonic devices.

Fabrication of Refractive Index Tunable Polydimethylsiloxane Photonic Crystal for Biosensor Application

NASA Astrophysics Data System (ADS)

Raman, Karthik; Murthy, T. R. Srinivasa; Hegde, G. M.

Photonic crystal based nanostructures are expected to play a significant role in next generation nanophotonic devices. Recent developments in two-dimensional (2D) photonic crystal based devices have created widespread interest as such planar photonic structures are compatible with conventional microelectronic and photonic devices. Various optical components such as waveguides, resonators, modulators and demultiplexers have been designed and fabricated based on 2D photonic crystal geometry. This paper presents the fabrication of refractive index tunable Polydimethylsiloxane (PDMS) polymer based photonic crystals. The advantages of using PDMS are mainly its chemical stability, bio-compatibility and the stack reduces sidewall roughness scattering. The PDMS structure with square lattice was fabricated by using silicon substrate patterned with SU8-2002 resist. The 600 nm period grating of PDMS is then fabricated using Nano-imprinting. In addition, the refractive index of PDMS is modified using certain additive materials. The resulting photonic crystals are suitable for application in photonic integrated circuits and biological applications such as filters, cavities or microlaser waveguides.

NASA Electronic Parts and Packaging (NEPP) Program - Radiation Activities

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Sampson, Michael J.

2008-01-01

The NEPP mission is to provide guidance to NASA for the selection and application of microelectronics technologies, to improve understanding of the risks related to the use of these technologies in the space environment and to ensure that appropriate research is performed to meet NASA mission assurance needs.

NeuroMEMS: Neural Probe Microtechnologies

PubMed Central

HajjHassan, Mohamad; Chodavarapu, Vamsy; Musallam, Sam

2008-01-01

Neural probe technologies have already had a significant positive effect on our understanding of the brain by revealing the functioning of networks of biological neurons. Probes are implanted in different areas of the brain to record and/or stimulate specific sites in the brain. Neural probes are currently used in many clinical settings for diagnosis of brain diseases such as seizers, epilepsy, migraine, Alzheimer's, and dementia. We find these devices assisting paralyzed patients by allowing them to operate computers or robots using their neural activity. In recent years, probe technologies were assisted by rapid advancements in microfabrication and microelectronic technologies and thus are enabling highly functional and robust neural probes which are opening new and exciting avenues in neural sciences and brain machine interfaces. With a wide variety of probes that have been designed, fabricated, and tested to date, this review aims to provide an overview of the advances and recent progress in the microfabrication techniques of neural probes. In addition, we aim to highlight the challenges faced in developing and implementing ultra-long multi-site recording probes that are needed to monitor neural activity from deeper regions in the brain. Finally, we review techniques that can improve the biocompatibility of the neural probes to minimize the immune response and encourage neural growth around the electrodes for long term implantation studies. PMID:27873894

Catheter-Based Sensing In The Airways

NASA Astrophysics Data System (ADS)

Fouke, J. M.; Saunders, K. G.

1988-04-01

Studies attempting to define the role of the respiratory tract in heating and humidifying inspired air point to the need for sensing many variables including airway wall and airstream temperatures, humidity, and surface fluid pH and osmolarity. In order to make such measurements in vivo in human volunteers, catheter based technologies must be exploited both to assure subject safety and subject comfort. Miniturization of the electrodes or sensors becomes a top priority. This paper describes the use of thin-film microelectronic technology to fabricate a miniature, flexible sensor which can be placed directly onto the surface of the airway to measure the electrical conductance of the fluids present. From this information the osmolarity of the surface fluid was calculated. Physiologic evaluation of the device and corroboration of the calculations was performed in mongrel dogs. We also describe the successful application of current thermistor technology for the thermal mapping of the airways in humans in order to characterize the dynamic intrathoracic events that occur during breathing. The thermal probe consisted of a flexible polyvinyl tube that contained fourteen small thermistors fixed into the catheter. Data have been obtained in dozens of people, both normal subjects and asthmatic patients, under a variety of interventions. These data have substantively advanced the study of asthma, a particularly troublesome chronic obstructive pulmonary disorder.

Simulation and Implementation of Moth-eye Structures as a Broadband Anti-Reflective Layer

NASA Astrophysics Data System (ADS)

Deshpande, Ketan S.

Conventional single layer thin anti-reflective coatings (ARCs) are only suitable for narrowband applications. A multilayer film stack is often employed for broadband applications. A coating of multiple layers with alternating low and high refractive index materials increases the overall cost of the system. This makes multilayer ARCs unsuitable for low-cost broadband applications. Since the discovery of moth-eye corneal nipple patterns and their potential applicability in the field of broadband ARCs, many studies have been carried out to fabricate these bio-inspired nanostructures with available manufacturing processes. Plasma etching processes used in microelectronic manufacturing are applied for creating these nanostructures at the Rochester Institute of Technology's Semiconductor & Microsystems Fabrication Laboratory (SMFL). Atomic Force Microscope (AFM) scanned surfaces of the nanostructure layer are simulated and characterized for their optical properties using a Finite-Difference Time Domain (FDTD) simulator from Lumerical Solutions, Inc. known as FDTD Solutions. Simulation results show that the layer is anti-reflective over 50 to 350 nm broadband of wavelengths at 0° angle of incidence. These simulation results were supported by ellipsometer reflection measurements off the actual samples at multiple angles of light incidence, which show a 10% to 15% decrease in reflection for 240 to 400 nm wavelengths. Further improvements in the optical efficiency of these structures can be achieved through simulation-fabrication-characterization cycles performed for this project. The optimized nanostructures can then serve the purpose of low-cost anti-reflective coatings for solar cells and similar applications.

JPRS Report, East Europe

DTIC Science & Technology

1988-01-29

Hungarian founders are the Microelectronics Enterprise and the Communications Technology Cooperative. The Soviet founders are the Union of Nauchniy Centr...selection, growing and breeding of new plant and animal species, and the development of manufacturing technology for the food industry. Direct...the reforms our economy still has not undergone a rapid enough technological modernization. We have, for example, failed to make any progress in the

Smart single-chip gas sensor microsystem

NASA Astrophysics Data System (ADS)

Hagleitner, C.; Hierlemann, A.; Lange, D.; Kummer, A.; Kerness, N.; Brand, O.; Baltes, H.

2001-11-01

Research activity in chemical gas sensing is currently directed towards the search for highly selective (bio)chemical layer materials, and to the design of arrays consisting of different partially selective sensors that permit subsequent pattern recognition and multi-component analysis. Simultaneous use of various transduction platforms has been demonstrated, and the rapid development of integrated-circuit technology has facilitated the fabrication of planar chemical sensors and sensors based on three-dimensional microelectromechanical systems. Complementary metal-oxide silicon processes have previously been used to develop gas sensors based on metal oxides and acoustic-wave-based sensor devices. Here we combine several of these developments to fabricate a smart single-chip chemical microsensor system that incorporates three different transducers (mass-sensitive, capacitive and calorimetric), all of which rely on sensitive polymeric layers to detect airborne volatile organic compounds. Full integration of the microelectronic and micromechanical components on one chip permits control and monitoring of the sensor functions, and enables on-chip signal amplification and conditioning that notably improves the overall sensor performance. The circuitry also includes analog-to-digital converters, and an on-chip interface to transmit the data to off-chip recording units. We expect that our approach will provide a basis for the further development and optimization of gas microsystems.

JPRS Report, Science and Technology Japan, 3rd Microelectronics Symposium

DTIC Science & Technology

1990-04-20

Electric Power Insulating Substrate; Degree of Sintering, Thermal Conductivity of Aluminum Nitride Ultrafine Particles ; Effect of Baking Pressure on AlN Sintering; Thick Film Resistor for Use in AlN Ceramics.

Research News: Are VLSI Microcircuits Too Hard to Design?

ERIC Educational Resources Information Center

Robinson, Arthur L.

1980-01-01

This research news article on microelectronics discusses the scientific challenge the integrated circuit industry will have in the next decade, for designing the complicated microcircuits made possible by advancing miniaturization technology. (HM)

Modernization (Selected Articles),

DTIC Science & Technology

1986-09-18

newly developed science such as control theory, artificial intelligence, model identification, computer and microelectronics technology, graphic...five "top guns" from around the country specializing in intellignece , mechanics, software and hardware as our technical advisors. In addition

Method of using sacrificial materials for fabricating internal cavities in laminated dielectric structures

DOEpatents

Peterson, Kenneth A [Albuquerque, NM

2009-02-24

A method of using sacrificial materials for fabricating internal cavities and channels in laminated dielectric structures, which can be used as dielectric substrates and package mounts for microelectronic and microfluidic devices. A sacrificial mandrel is placed in-between two or more sheets of a deformable dielectric material (e.g., unfired LTCC glass/ceramic dielectric), wherein the sacrificial mandrel is not inserted into a cutout made in any of the sheets. The stack of sheets is laminated together, which deforms the sheet or sheets around the sacrificial mandrel. After lamination, the mandrel is removed, (e.g., during LTCC burnout), thereby creating a hollow internal cavity in the monolithic ceramic structure.

Method of forming crystalline silicon devices on glass

DOEpatents

McCarthy, Anthony M.

1995-01-01

A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

Maskless wafer-level microfabrication of optical penetrating neural arrays out of soda-lime glass: Utah Optrode Array.

PubMed

Boutte, Ronald W; Blair, Steve

2016-12-01

Borrowing from the wafer-level fabrication techniques of the Utah Electrode Array, an optical array capable of delivering light for neural optogenetic studies is presented in this paper: the Utah Optrode Array. Utah Optrode Arrays are micromachined out of sheet soda-lime-silica glass using standard backend processes of the semiconductor and microelectronics packaging industries such as precision diamond grinding and wet etching. 9 × 9 arrays with 1100μ m × 100μ m optrodes and a 500μ m back-plane are repeatably reproduced on 2i n wafers 169 arrays at a time. This paper describes the steps and some of the common errors of optrode fabrication.

Fabrication of high-k dielectric Calcium Copper Titanate (CCTO) target by solid state route

NASA Astrophysics Data System (ADS)

Tripathy, N.; Das, K. C.; Ghosh, S. P.; Bose, G.; Kar, J. P.

2016-02-01

CaCu3Ti4O12 (CCTO) ceramic pellet of 10mm diameter has been synthesized by adopting solid state route. The structural and morphological characterization of the ceramics sample was carried out by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. XRD pattern revealed the CCTO phase formation, where as SEM micrograph shows the sample consisting of well defined grain and grain boundaries. The room temperature dielectric constant of the sample was found to be ∼ 5000 at 1kHz. After successful preparation of CCTO pellet, a 2 inch diameter CCTO sputtering target is also fabricated in order to deposit CCTO thin films for microelectronic applications.

Restoring visual perception using microsystem technologies: engineering and manufacturing perspectives.

PubMed

Krisch, I; Hosticka, B J

2007-01-01

Microsystem technologies offer significant advantages in the development of neural prostheses. In the last two decades, it has become feasible to develop intelligent prostheses that are fully implantable into the human body with respect to functionality, complexity, size, weight, and compactness. Design and development enforce collaboration of various disciplines including physicians, engineers, and scientists. The retina implant system can be taken as one sophisticated example of a prosthesis which bypasses neural defects and enables direct electrical stimulation of nerve cells. This micro implantable visual prosthesis assists blind patients to return to the normal course of life. The retina implant is intended for patients suffering from retinitis pigmentosa or macular degeneration. In this contribution, we focus on the epiretinal prosthesis and discuss topics like system design, data and power transfer, fabrication, packaging and testing. In detail, the system is based upon an implantable micro electro stimulator which is powered and controlled via a wireless inductive link. Microelectronic circuits for data encoding and stimulation are assembled on flexible substrates with an integrated electrode array. The implant system is encapsulated using parylene C and silicone rubber. Results extracted from experiments in vivo demonstrate the retinotopic activation of the visual cortex.

NASA spinoffs to bioengineering and medicine

NASA Technical Reports Server (NTRS)

Rouse, Doris J.; Winfield, Daniel L.; Canada, S. Catherine

1989-01-01

The societal and economic benefits derived from the application of aerospace technology to improved health care are examined, and examples of the space-technology spinoffs are presented. Special attention is given to the applications of aerospace technology from digital image processing, space medicine and biology, microelectronics, optics and electrooptics, and ultrasonic imaging. The role of the NASA Technology Application Team in helping the potential technology users to identify and evaluate the technology transfer opportunities and to apply space technology in the field of medicine is discussed.

Technology Development Activities for the Space Environment and its Effects on Spacecraft

NASA Technical Reports Server (NTRS)

Kauffman, Billy; Hardage, Donna; Minor, Jody; Barth, Janet; LaBel, Ken

2003-01-01

Reducing size and weight of spacecraft, along with demanding increased performance capabilities, introduces many uncertainties in the engineering design community on how emerging microelectronics will perform in space. The engineering design community is forever behind on obtaining and developing new tools and guidelines to mitigate the harmful effects of the space environment. Adding to this complexity is the push to use Commercial-off-the-shelf (COTS) and shrinking microelectronics behind less shielding and the potential usage of unproven technologies such as large solar sail structures and nuclear electric propulsion. In order to drive down these uncertainties, various programs are working together to avoid duplication, save what resources are available in this technical area and possess a focused agenda to insert these new developments into future mission designs. This paper will describe the relationship between the Living With a Star (LWS): Space Environment Testbeds (SET) Project and NASA's Space Environments and Effects (SEE) Program and their technology development activities funded as a result from the recent SEE Program's NASA Research Announcement.

A New Microelectronics Curriculum Created by Synopsys, Inc.

ERIC Educational Resources Information Center

Goldman, Rich; Bartleson, Karen; Wood, Troy; Melikyan, Vazgen; Wang, Zhi-hua; Chen, Lan

2009-01-01

Rapid changes in integrated circuits (IC) technology and constantly shrinking process geometries demand a new curriculum that meets the contemporary requirements for IC design. This is especially important for 90nm and below technologies and the use of state-of-the-art EDA design tools and advanced IC design techniques. The creation of new…

Positioning Education in the Information Society: The Transnational Diffusion of the Information and Communication Technology Curriculum

ERIC Educational Resources Information Center

Ham, Seung-Hwan; Cha, Yun-Kyung

2009-01-01

One of the most distinctive qualities that characterize present-day society is the social fact that people are shifting to the information age. In recent years, they have witnessed remarkable developments in information and communication technology (ICT), in which microelectronics, computers, and telecommunications have converged. Transnational…

The Effects of Microprocessors on Industry, Society and Employment: A Meeting of the Frontier Group on Strategies for Change in a Technological Society (Bath, England, March 13, 1979).

ERIC Educational Resources Information Center

Harris, N. D. C.

Discussed are the multiple impacts of microelectronics on society. Included are discussions of the problem of predicting effects, difficulty of exploiting new technology, manpower consequences, and needs within the United Kingdom relating to microprocessors. (RE)

The Impact of Technology on Hawaii's Automotive Mechanics: An Analysis with Recommendations. Technological Impact Study Series.

ERIC Educational Resources Information Center

Allen, Robert

Because of the increasing use of microelectronic componentry in automobiles, vocational educators must reexamine existing automotive mechanics curricula to ensure that they can continue to provide relevant job training. After examining recent trends in the impact of computers and electronics on automotive design and engineering, existing auto…

Potential Applications and Impact of Microelectronic and Telecommunication Technology in Health Care Delivery. Final Report.

ERIC Educational Resources Information Center

Mandex, Inc., Vienna, VA.

This compendium of current and recent innovative methods of health care delivery focuses on telemedicine, and educational and energy management and control applications. Each application is doumented in a project abstract describing the system and the technology employed, and citing relevant information sources and a personal or organizational…

Field nanoemitter: One-dimension Al4C3 ceramics

NASA Astrophysics Data System (ADS)

Sun, Y.; Cui, H.; Gong, L.; Chen, Jian; Shen, P. K.; Wang, C. X.

2011-07-01

As a kind of ionic (or salt-like) carbide, Al4C3 hardly any active functions have been found except for structure material purposes. However, considering the unique characteristic features of its crystal structure, we think Al4C3 in fact might have huge potential for exhibiting active functionality on field-emission application. Herein, we report for the first time the catalyst-free synthesis and excellent field emission properties of Al4C3 one-dimension (1-D) nanostructures. The 1-D nanostructures acting as cold electron emitters display excellent field emission performance with the turn-on field as low as 1.4-2.0 V μm-1 and the threshold field down to 4.2-4.4 V μm-1. Such emitters are technologically useful, because they can be easily fabricated on large substrates, and the synthesis process is simple and broadly applicable. The findings conceptually provide new opportunities for the application of Al4C3 ceramic material in vacuum microelectronic devices.

Design And Implementation Of Integrated Vision-Based Robotic Workcells

NASA Astrophysics Data System (ADS)

Chen, Michael J.

1985-01-01

Reports have been sparse on large-scale, intelligent integration of complete robotic systems for automating the microelectronics industry. This paper describes the application of state-of-the-art computer-vision technology for manufacturing of miniaturized electronic components. The concepts of FMS - Flexible Manufacturing Systems, work cells, and work stations and their control hierarchy are illustrated in this paper. Several computer-controlled work cells used in the production of thin-film magnetic heads are described. These cells use vision for in-process control of head-fixture alignment and real-time inspection of production parameters. The vision sensor and other optoelectronic sensors, coupled with transport mechanisms such as steppers, x-y-z tables, and robots, have created complete sensorimotor systems. These systems greatly increase the manufacturing throughput as well as the quality of the final product. This paper uses these automated work cells as examples to exemplify the underlying design philosophy and principles in the fabrication of vision-based robotic systems.

Miniature High-Let Radiation Spectrometer for Space and Avionics Applications

NASA Technical Reports Server (NTRS)

Stassinopoulos, E. G.; Stauffer, Craig A.; Brucker, G. J.

1998-01-01

This paper reports on the design and characterization of a small, low power, and low weight instrument, a High-LET Radiation Spectrometer (HiLRS), that measures energy deposited by heavy ions in microelectronic devices. The HILRS operates on pulse-height analysis principles and is designed for space and avionics applications. The detector component in the instrument is based on large scale arrays of p-n junctions. In this system, the pulse amplitude from a particle hit is directly proportional to the particle LET. A prototype flight unit has been fabricated and calibrated using several heavy ions with varying LETs and protons with several energies. The unit has been delivered to the Ballistic Missile Defense Organization (BMDO) c/o the Air Force Research Laboratory in Albuquerque, NM, for integration into the military Space Technology Research Vehicle (STRV), a US-UK cooperative mission. Another version of HILRS is being prepared for delivery in April to the Hubble Space Telescope (HST) project, to fly on the HST Orbital Systems Test (HOST) Platform on a shuttle mission.

Encapsulated silicene: A robust large-gap topological insulator

DOE PAGES

Kou, Liangzhi; Ma, Yandong; Yan, Binghai; ...

2015-08-20

The quantum spin Hall (QSH) effect predicted in silicene has raised exciting prospects of new device applications compatible with current microelectronic technology. Efforts to explore this novel phenomenon, however, have been impeded by fundamental challenges imposed by silicene’s small topologically nontrivial band gap and fragile electronic properties susceptible to environmental degradation effects. Here we propose a strategy to circumvent these challenges by encapsulating silicene between transition-metal dichalcogenides (TMDCs) layers. First-principles calculations show that such encapsulated silicene exhibit a two-orders-of-magnitude enhancement in its nontrivial band gap, which is driven by the strong spin–orbit coupling effect in TMDCs via the proximity effect.more » Moreover, the cladding TMDCs layers also shield silicene from environmental gases that are detrimental to the QSH state in free-standing silicene. In conclusion, the encapsulated silicene represents a novel two-dimensional topological insulator with a robust nontrivial band gap suitable for room-temperature applications, which has significant implications for innovative QSH device design and fabrication.« less

Immunosensing by luminescence reduction in surface-modified microstructured SU-8

NASA Astrophysics Data System (ADS)

Eravuchira, Pinkie Jacob; Baranowska, Malgorzata; Eckstein, Chris; Díaz, Francesc; Llobet, Eduard; Marsal, Lluis F.; Ferré-Borrull, Josep

2017-01-01

SU-8, an epoxy based negative photoresist is extensively used as a structural material for the fabrication of microelectro-mechanical systems and in microelectronics technology. However, the possible applications of SU-8 for biosensing have not been explored much, mainly because of the photoluminescence SU-8 possesses in the near-UV and visible wavelength ranges which hinders fluorescent labelling of biorecognition events. In this study we demonstrate that photoluminescence of SU-8 can be employed itself as a sensing transduction parameter to produce a tool for immunosensing: the photoluminescence shows a systematic reduction upon modification of its surface chemistry, and in particular upon attachment of an antigen-antibody (aIgG-IgG) pair. We investigate the relation of the amount of reduction of photoluminescence on planar and microstructured surfaces, and we show that microstructuring leads to a higher reduction than a planar surface. Furthermore, we evaluated the dependence of photoluminescence reduction as a function of analyte concentration to prove that this magnitude can be applied to immunosensing.

Direct Growth of Graphene Film on Germanium Substrate

PubMed Central

Wang, Gang; Zhang, Miao; Zhu, Yun; Ding, Guqiao; Jiang, Da; Guo, Qinglei; Liu, Su; Xie, Xiaoming; Chu, Paul K.; Di, Zengfeng; Wang, Xi

2013-01-01

Graphene has been predicted to play a role in post-silicon electronics due to the extraordinary carrier mobility. Chemical vapor deposition of graphene on transition metals has been considered as a major step towards commercial realization of graphene. However, fabrication based on transition metals involves an inevitable transfer step which can be as complicated as the deposition of graphene itself. By ambient-pressure chemical vapor deposition, we demonstrate large-scale and uniform depositon of high-quality graphene directly on a Ge substrate which is wafer scale and has been considered to replace conventional Si for the next generation of high-performance metal-oxide-semiconductor field-effect transistors (MOSFETs). The immiscible Ge-C system under equilibrium conditions dictates graphene depositon on Ge via a self-limiting and surface-mediated process rather than a precipitation process as observed from other metals with high carbon solubility. Our technique is compatible with modern microelectronics technology thus allowing integration with high-volume production of complementary metal-oxide-semiconductors (CMOS). PMID:23955352

FOREWORD: Proceedings of the 39th International Microelectronics and Packaging IMAPS Poland Conference

NASA Astrophysics Data System (ADS)

Jasiński, Piotr; Górecki, Krzysztof; Bogdanowicz, Robert

2016-01-01

These proceedings are a collection of the selected articles presented at the 39th International Microelectronics and Packaging IMAPS Poland Conference, held in Gdansk, Poland on September 20-23, 2015 (IMAPS Poland 2015). The conference has been held under the scientific patronage of the International Microelectronics and Packaging Society Poland Chapter and the Committee of Electronics and Telecommunication, Polish Academy of Science and jointly hosted by the Gdansk University of Technology, Faculty of Electronics, Telecommunication and Informatics (GUT) and the Gdynia Maritime University, Faculty of Electrical Engineering (GMU). The IMAPS Poland conference series aims to advance interdisciplinary scientific information exchange and the discussion of the science and technology of advanced electronics. The IMAPS Poland 2015 conference took place in the heart of Gdansk, two minutes walking distance from the beach. The surroundings and location of the venue guaranteed excellent working and leisure conditions. The three-day conference highlighted invited talks by outstanding scientists working in important areas of electronics and electronic material science. The eight sessions covered areas in the fields of electronics packaging, interconnects on PCB, Low Temperature Co-fired Ceramic (LTCC), MEMS devices, transducers, sensors and modelling of electronic devices. The conference was attended by 99 participants from 11 countries. The conference schedule included 18 invited presentations and 78 poster presentations.

Nanotechnology: MEMS and NEMS and their applications to smart systems and devices

NASA Astrophysics Data System (ADS)

Varadan, Vijay K.

2003-10-01

The microelectronics industry has seen explosive growth during the last thirty years. Extremely large markets for logic and memory devices have driven the development of new materials, and technologies for the fabrication of even more complex devices with features sizes now down at the sub micron and nanometer level. Recent interest has arisen in employing these materials, tools and technologies for the fabrication of miniature sensors and actuators and their integration with electronic circuits to produce smart devices and systems. This effort offers the promise of: (1) increasing the performance and manufacturability of both sensors and actuators by exploiting new batch fabrication processes developed including micro stereo lithographic and micro molding techniques; (2) developing novel classes of materials and mechanical structures not possible previously, such as diamond like carbon, silicon carbide and carbon nanotubes, micro-turbines and micro-engines; (3) development of technologies for the system level and wafer level integration of micro components at the nanometer precision, such as self-assembly techniques and robotic manipulation; (4) development of control and communication systems for MEMS devices, such as optical and RF wireless, and power delivery systems, etc. A novel composite structure can be tailored by functionalizing carbon nano tubes and chemically bonding them with the polymer matrix e.g. block or graft copolymer, or even cross-linked copolymer, to impart exceptional structural, electronic and surface properties. Bio- and Mechanical-MEMS devices derived from this hybrid composite provide a new avenue for future smart systems. The integration of NEMS (NanoElectroMechanical Systems), MEMS, IDTs (Interdigital Transducers) and required microelectronics and conformal antenna in the multifunctional smart materials and composites results in a smart system suitable for sending and control of a variety functions in automobile, aerospace, marine and civil strutures and food and medical industries. This unique combination of technologies also results in novel conformal sensors that can be remotely sensed by an antenna system with the advantage of no power requirements at the sensor site. This paper provides a brief review of MEMS and NEMS based smart systems for various applications mentioned above. Carbon Nano Tubes (CNT) with their unique structure, have already proven to be valuable in their application as tips for scanning probe microscopy, field emission devices, nanoelectronics, H2-storage, electromagnetic absorbers, ESD, EMI films and coatings and structural composites. For many of these applications, highly purified and functionalized CNT which are compatible with many host polymers are needed. A novel microwave CVD processing technique to meet these requirements has been developed at Penn State Center for the Engineering of Electronic and Acoustic Materials and Devices (CEEAMD). This method enables the production of highly purified carbon nano tubes with variable size (from 5 - 40 nm) at low cost (per gram) and high yield. Whereas, carbon nano tubes synthesized using the laser ablation or arc discharge evaporation method always include impurity due to catalyst or catalyst support. The Penn State research is based on the use of zeolites over other metal/metal oxides in the microwave field for a high production and uniformity of the product. An extended coventional purification method has been employed to purify our products in order to remove left over impurity. A novel composite structure can be tailored by functionalizing carbon nano tubes and chemically bonding them with the polymer matrix e.g. block or graft copolymer, or even cross-linked copolymer, to impart exceptional structural, electronic and surface properties. Bio- and Mechanical-MEMS devices derived from this hybrid composites will be presented.

MEMS- and NEMS-based smart devices and systems

NASA Astrophysics Data System (ADS)

Varadan, Vijay K.

2001-11-01

The microelectronics industry has seen explosive growth during the last thirty years. Extremely large markets for logic and memory devices have driven the development of new materials, and technologies for the fabrication of even more complex devices with features sized now don at the sub micron and nanometer level. Recent interest has arisen in employing these materials, tools and technologies for the fabrication of miniature sensors and actuators and their integration with electronic circuits to produce smart devices and systems. This effort offers the promise of: 1) increasing the performance and manufacturability of both sensors and actuators by exploiting new batch fabrication processes developed including micro stereo lithographic an micro molding techniques; 2) developing novel classes of materials and mechanical structures not possible previously, such as diamond like carbon, silicon carbide and carbon nanotubes, micro-turbines and micro-engines; 3) development of technologies for the system level and wafer level integration of micro components at the nanometer precision, such as self-assembly techniques and robotic manipulation; 4) development of control and communication systems for MEMS devices, such as optical and RF wireless, and power delivery systems, etc. A novel composite structure can be tailored by functionalizing carbon nano tubes and chemically bonding them with the polymer matrix e.g. block or graft copolymer, or even cross-linked copolymer, to impart exceptional structural, electronic and surface properties. Bio- and Mechanical-MEMS devices derived from this hybrid composite provide a new avenue for future smart systems. The integration of NEMS (NanoElectroMechanical Systems), MEMS, IDTs (Interdigital Transducers) and required microelectronics and conformal antenna in the multifunctional smart materials and composites results in a smart system suitable for sensing and control of a variety functions in automobile, aerospace, marine and civil structures and food and medical industries. This unique combination of technologies also results in novel conformal sensors that can be remotely sensed by an antenna system with the advantage of no power requirements at the sensor site. This paper provides a brief review of MEMS and NEMS based smart systems for various applications mentioned above. Carbon Nano Tubes (CNT) with their unique structure, have already proven to be valuable in their application as tips for scanning probe microscopy, field emission devices, nanoelectronics, H2-storage, electromagnetic absorbers, ESD, EMI films and coatings and structural composites. For many of these applications, highly purified and functionalized CNT which are compatible with many host polymers are needed. A novel microwave CVD processing technique to meet these requirements has been developed at Penn State Center for the engineering of Electronic and Acoustic Materials and Devices (CEEAMD). This method enables the production of highly purified carbon nano tubes with variable size (from 5-40 nm) at low cost (per gram) and high yield. Whereas, carbon nano tubes synthesized using the laser ablation or arc discharge evaporation method always include impurity due to catalyst or catalyst support. The Penn State research is based on the use of zeolites over other metal/metal oxides in the microwave field for a high production and uniformity of the product. An extended conventional purification method has been employed to purify our products in order to remove left over impurity. A novel composite structure can be tailored by functionalizing carbon nano tubes and chemically bonding them with the polymer matrix e.g. block or graft copolymer, or even cross- linked copolymer, to impart exceptional structural, electronic and surface properties. Bio- and Mechanical-MEMS devices derived from this hybrid composites will be presented.

Femtosecond laser three-dimensional micro- and nanofabrication

NASA Astrophysics Data System (ADS)

Sugioka, Koji; Cheng, Ya

2014-12-01

The rapid development of the femtosecond laser has revolutionized materials processing due to its unique characteristics of ultrashort pulse width and extremely high peak intensity. The short pulse width suppresses the formation of a heat-affected zone, which is vital for ultrahigh precision fabrication, whereas the high peak intensity allows nonlinear interactions such as multiphoton absorption and tunneling ionization to be induced in transparent materials, which provides versatility in terms of the materials that can be processed. More interestingly, irradiation with tightly focused femtosecond laser pulses inside transparent materials makes three-dimensional (3D) micro- and nanofabrication available due to efficient confinement of the nonlinear interactions within the focal volume. Additive manufacturing (stereolithography) based on multiphoton absorption (two-photon polymerization) enables the fabrication of 3D polymer micro- and nanostructures for photonic devices, micro- and nanomachines, and microfluidic devices, and has applications for biomedical and tissue engineering. Subtractive manufacturing based on internal modification and fabrication can realize the direct fabrication of 3D microfluidics, micromechanics, microelectronics, and photonic microcomponents in glass. These microcomponents can be easily integrated in a single glass microchip by a simple procedure using a femtosecond laser to realize more functional microdevices, such as optofluidics and integrated photonic microdevices. The highly localized multiphoton absorption of a tightly focused femtosecond laser in glass can also induce strong absorption only at the interface of two closely stacked glass substrates. Consequently, glass bonding can be performed based on fusion welding with femtosecond laser irradiation, which provides the potential for applications in electronics, optics, microelectromechanical systems, medical devices, microfluidic devices, and small satellites. This review paper describes the concepts and principles of femtosecond laser 3D micro- and nanofabrication and presents a comprehensive review on the state-of-the-art, applications, and the future prospects of this technology.

Femtosecond laser three-dimensional micro- and nanofabrication

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sugioka, Koji, E-mail: ksugioka@riken.jp; Cheng, Ya, E-mail: ya.cheng@siom.ac.cn

2014-12-15

The rapid development of the femtosecond laser has revolutionized materials processing due to its unique characteristics of ultrashort pulse width and extremely high peak intensity. The short pulse width suppresses the formation of a heat-affected zone, which is vital for ultrahigh precision fabrication, whereas the high peak intensity allows nonlinear interactions such as multiphoton absorption and tunneling ionization to be induced in transparent materials, which provides versatility in terms of the materials that can be processed. More interestingly, irradiation with tightly focused femtosecond laser pulses inside transparent materials makes three-dimensional (3D) micro- and nanofabrication available due to efficient confinement ofmore » the nonlinear interactions within the focal volume. Additive manufacturing (stereolithography) based on multiphoton absorption (two-photon polymerization) enables the fabrication of 3D polymer micro- and nanostructures for photonic devices, micro- and nanomachines, and microfluidic devices, and has applications for biomedical and tissue engineering. Subtractive manufacturing based on internal modification and fabrication can realize the direct fabrication of 3D microfluidics, micromechanics, microelectronics, and photonic microcomponents in glass. These microcomponents can be easily integrated in a single glass microchip by a simple procedure using a femtosecond laser to realize more functional microdevices, such as optofluidics and integrated photonic microdevices. The highly localized multiphoton absorption of a tightly focused femtosecond laser in glass can also induce strong absorption only at the interface of two closely stacked glass substrates. Consequently, glass bonding can be performed based on fusion welding with femtosecond laser irradiation, which provides the potential for applications in electronics, optics, microelectromechanical systems, medical devices, microfluidic devices, and small satellites. This review paper describes the concepts and principles of femtosecond laser 3D micro- and nanofabrication and presents a comprehensive review on the state-of-the-art, applications, and the future prospects of this technology.« less

GaAs Computer Technology

DTIC Science & Technology

1992-01-07

AD-A259 259 FASTC-ID FOREIGN AEROSPACE SCIENCE AND TECHNOLOGY CENTER GaAs COMPUTER TECHNOLOGY (1) by Wang Qiao-yu 93-00999 Distrir bution t,,,Nm ted...FASTC- ID(RS)T-0310-92 HUMAN TRANSLATION FASTC-ID(RS)T-0310-92 7 January 1993 GaAs COMPUTER TECHNOLOGY (1) By: Wang Qiao-yu English pages: 6 Source...the best quality copy available. j C] " ------ GaAs Computer Technology (1) Wang Qiao-yu (Li-Shan Microelectronics Institute) Abstract: The paper

Focused Ion Beam Fabrication of Microelectronic Structures

DTIC Science & Technology

1990-12-01

a simple function generator and allows fast ing, the pressure measured by the capacitance manometer is equal to the pressure at the sample surface...height above the sample ties. In practice this restricts features to simple rectangles or surface. J. Vac. . Tedhnol. B, VOL 7, No. 4, Jul/Aug IM...the sample up to 300 keV are available.(2) -3- This higher energy is often needed for implantation and for lithography in thick resist. Be++ ions at

Design, processing and testing of LSI arrays: Hybrid microelectronics task

NASA Technical Reports Server (NTRS)

Himmel, R. P.; Stuhlbarg, S. M.; Ravetti, R. G.; Zulueta, P. J.

1979-01-01

Mathematical cost factors were generated for both hybrid microcircuit and printed wiring board packaging methods. A mathematical cost model was created for analysis of microcircuit fabrication costs. The costing factors were refined and reduced to formulae for computerization. Efficient methods were investigated for low cost packaging of LSI devices as a function of density and reliability. Technical problem areas such as wafer bumping, inner/outer leading bonding, testing on tape, and tape processing, were investigated.

Integrating silicon photonic interconnects with CMOS: Fabrication to architecture

NASA Astrophysics Data System (ADS)

Sherwood, Nicholas Ramsey

While it was for many years the goal of microelectronics to speed up our daily tasks, the focus of today's technological developments is heavily centered on electronic media. Anyone can share their thoughts as text, sound, images or full videos, they can even make phone calls and download full movies on their computers, tablets and phones. The impact of this upsurge in bandwidth is directly on the infrastructure that carries this data. Long distance telecom lines were long ago replaced by optical fibers; now shorter and shorter distance connections have moved to optical transmission to keep up with the bandwidth requirements. Yet microprocessors that make up the switching nodes as well as the endpoints are not only stagnant in terms of processing speed, but also unlikely to continue Moore's transistor-doubling trend for much longer. Silicon photonics stands to make a technical leap in microprocessor technology by allowing monolithic communication speeds between arbitrarily spaced processing elements. The improvement in on-chip communication could reduce power and enable new improvements in this field. This work explores a few aspects involved in making such a leap practical in real life. The first part of the thesis develops process techniques and materials to make silicon photonics truly compatible with CMOS electronics, for two different stack layouts, including a glimpse into multilayerd photonics. Following this is an evaluation of the limitations of integrated devices and a post-fabrication/stabilizing solution using thermal index shifting. In the last parts we explore higher level device design and architecture on the SOI platform.

A stable solution-processed polymer semiconductor with record high-mobility for printed transistors

PubMed Central

Li, Jun; Zhao, Yan; Tan, Huei Shuan; Guo, Yunlong; Di, Chong-An; Yu, Gui; Liu, Yunqi; Lin, Ming; Lim, Suo Hon; Zhou, Yuhua; Su, Haibin; Ong, Beng S.

2012-01-01

Microelectronic circuits/arrays produced via high-speed printing instead of traditional photolithographic processes offer an appealing approach to creating the long-sought after, low-cost, large-area flexible electronics. Foremost among critical enablers to propel this paradigm shift in manufacturing is a stable, solution-processable, high-performance semiconductor for printing functionally capable thin-film transistors — fundamental building blocks of microelectronics. We report herein the processing and optimisation of solution-processable polymer semiconductors for thin-film transistors, demonstrating very high field-effect mobility, high on/off ratio, and excellent shelf-life and operating stabilities under ambient conditions. Exceptionally high-gain inverters and functional ring oscillator devices on flexible substrates have been demonstrated. This optimised polymer semiconductor represents a significant progress in semiconductor development, dispelling prevalent skepticism surrounding practical usability of organic semiconductors for high-performance microelectronic devices, opening up application opportunities hitherto functionally or economically inaccessible with silicon technologies, and providing an excellent structural framework for fundamental studies of charge transport in organic systems. PMID:23082244

Hardware Acceleration of Adaptive Neural Algorithms.

DOE Office of Scientific and Technical Information (OSTI.GOV)

James, Conrad D.

As tradit ional numerical computing has faced challenges, researchers have turned towards alternative computing approaches to reduce power - per - computation metrics and improve algorithm performance. Here, we describe an approach towards non - conventional computing that strengthens the connection between machine learning and neuroscience concepts. The Hardware Acceleration of Adaptive Neural Algorithms (HAANA) project ha s develop ed neural machine learning algorithms and hardware for applications in image processing and cybersecurity. While machine learning methods are effective at extracting relevant features from many types of data, the effectiveness of these algorithms degrades when subjected to real - worldmore » conditions. Our team has generated novel neural - inspired approa ches to improve the resiliency and adaptability of machine learning algorithms. In addition, we have also designed and fabricated hardware architectures and microelectronic devices specifically tuned towards the training and inference operations of neural - inspired algorithms. Finally, our multi - scale simulation framework allows us to assess the impact of microelectronic device properties on algorithm performance.« less

Piezoelectric-nanowire-enabled power source for driving wireless microelectronics.

PubMed

Xu, Sheng; Hansen, Benjamin J; Wang, Zhong Lin

2010-10-19

Harvesting energy from irregular/random mechanical actions in variable and uncontrollable environments is an effective approach for powering wireless mobile electronics to meet a wide range of applications in our daily life. Piezoelectric nanowires are robust and can be stimulated by tiny physical motions/disturbances over a range of frequencies. Here, we demonstrate the first chemical epitaxial growth of PbZr(x)Ti(1-x)O(3) (PZT) nanowire arrays at 230 °C and their application as high-output energy converters. The nanogenerators fabricated using a single array of PZT nanowires produce a peak output voltage of ~0.7 V, current density of 4 μA cm(-2) and an average power density of 2.8 mW cm(-3). The alternating current output of the nanogenerator is rectified, and the harvested energy is stored and later used to light up a commercial laser diode. This work demonstrates the feasibility of using nanogenerators for powering mobile and even personal microelectronics.

Controlling Kink Geometry in Nanowires Fabricated by Alternating Metal-Assisted Chemical Etching.

PubMed

Chen, Yun; Li, Liyi; Zhang, Cheng; Tuan, Chia-Chi; Chen, Xin; Gao, Jian; Wong, Ching-Ping

2017-02-08

Kinked silicon (Si) nanowires (NWs) have many special properties that make them attractive for a number of applications, such as microfluidics devices, microelectronic devices, and biosensors. However, fabricating NWs with controlled three-dimensional (3D) geometry has been challenging. In this work, a novel method called alternating metal-assisted chemical etching is reported for the fabrication of kinked Si NWs with controlled 3D geometry. By the use of multiple etchants with carefully selected composition, one can control the number of kinks, their locations, and their angles by controlling the number of etchant alternations and the time in each etchant. The resulting number of kinks equals the number times the etchant is alternated, the length of each segment separated by kinks has a linear relationship with the etching time, and the kinking angle is related to the surface tension and viscosity of the etchants. This facile method may provide a feasible and economical way to fabricate novel silicon nanowires, nanostructures, and devices for broad applications.

Melding Vapor-Phase Organic Chemistry and Textile Manufacturing To Produce Wearable Electronics.

PubMed

Andrew, Trisha L; Zhang, Lushuai; Cheng, Nongyi; Baima, Morgan; Kim, Jae Joon; Allison, Linden; Hoxie, Steven

2018-04-17

Body-mountable electronics and electronically active garments are the future of portable, interactive devices. However, wearable devices and electronic garments are demanding technology platforms because of the large, varied mechanical stresses to which they are routinely subjected, which can easily abrade or damage microelectronic components and electronic interconnects. Furthermore, aesthetics and tactile perception (or feel) can make or break a nascent wearable technology, irrespective of device metrics. The breathability and comfort of commercial fabrics is unmatched. There is strong motivation to use something that is already familiar, such as cotton/silk thread, fabrics, and clothes, and imperceptibly adapt it to a new technological application. (24) Especially for smart garments, the intrinsic breathability, comfort, and feel of familiar fabrics cannot be replicated by devices built on metalized synthetic fabrics or cladded, often-heavy designer fibers. We propose that the strongest strategy to create long-lasting and impactful electronic garments is to start with a mass-produced article of clothing, fabric, or thread/yarn and coat it with conjugated polymers to yield various textile circuit components. Commonly available, mass-produced fabrics, yarns/threads, and premade garments can in theory be transformed into a plethora of comfortably wearable electronic devices upon being coated with films of electronically active conjugated polymers. The definitive hurdle is that premade garments, threads, and fabrics have densely textured, three-dimensional surfaces that display roughness over a large range of length scales, from microns to millimeters. Tremendous variation in the surface morphology of conjugated-polymer-coated fibers and fabrics can be observed with different coating or processing conditions. In turn, the morphology of the conjugated polymer active layer determines the electrical performance and, most importantly, the device ruggedness and lifetime. Reactive vapor coating methods allow a conjugated polymer film to be directly formed on the surface of any premade garment, prewoven fabric, or fiber/yarn substrate without the need for specialized processing conditions, surface pretreatments, detergents, or fixing agents. This feature allows electronic coatings to be applied at the end of existing, high-throughput textile and garment manufacturing routines, irrespective of dye content or surface finish of the final textile. Furthermore, reactive vapor coating produces conductive materials without any insulating moieties and yields uniform and conformal films on fiber/fabric surfaces that are notably wash- and wear-stable and can withstand mechanically demanding textile manufacturing routines. These unique features mean that rugged and practical textile electronic devices can be created using sewing, weaving, or knitting procedures without compromising or otherwise affecting the surface electronic coating. In this Account, we highlight selected electronic fabrics and garments created by melding reactive vapor deposition with traditional textile manipulation processes, including electrically heated gloves that are lightweight, breathable, and sweat-resistant; surface-coated cotton, silk, and bast fiber threads capable of carrying large current densities and acting as sewable circuit interconnects; and surface-coated nylon threads woven together to form triboelectric textiles that can convert surface charge created during small body movements into usable and storable power.

Eye vision system using programmable micro-optics and micro-electronics

NASA Astrophysics Data System (ADS)

Riza, Nabeel A.; Amin, M. Junaid; Riza, Mehdi N.

2014-02-01

Proposed is a novel eye vision system that combines the use of advanced micro-optic and microelectronic technologies that includes programmable micro-optic devices, pico-projectors, Radio Frequency (RF) and optical wireless communication and control links, energy harvesting and storage devices and remote wireless energy transfer capabilities. This portable light weight system can measure eye refractive powers, optimize light conditions for the eye under test, conduct color-blindness tests, and implement eye strain relief and eye muscle exercises via time sequenced imaging. Described is the basic design of the proposed system and its first stage system experimental results for vision spherical lens refractive error correction.

Risk Management of Microelectronics: The NASA Electronic Parts and Packaging (NEPP) Program

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Sampson, Michael J.

2005-01-01

This viewgraph information provides information on how the NASA Electronic Parts and Packaging (NEPP) Program evaluates the reliability of technologies for Electrical, Electronic, and Electromechanical (EEE) parts, and their suitability for spacecraft applications.

Education and the Transformation of Markets and Technology in the Textile Industry. Technical Paper No. 2.

ERIC Educational Resources Information Center

Bailey, Thomas

This report on the textile industry focuses on the training and education of production-level textile workers--from unskilled factory hands to first-level supervisors. It is part of a larger study of the educational implications of broad economic changes, particularly the spread of microelectronic technologies, growing national and international…

High peak power solid-state laser for micromachining of hard materials

NASA Astrophysics Data System (ADS)

Herbst, Ludolf; Quitter, John P.; Ray, Gregory M.; Kuntze, Thomas; Wiessner, Alexander O.; Govorkov, Sergei V.; Heglin, Mike

2003-06-01

Laser micromachining has become a key enabling technology in the ever-continuing trend of miniaturization in microelectronics, micro-optics, and micromechanics. New applications have become commercially viable due to the emergence of innovative laser sources, such as diode pumped solid-state lasers (DPSSL), and the progress in processing technology. Examples of industrial applications are laser-drilled micro-injection nozzles for highly efficient automobile engines, or manufacturing of complex spinnerets for production of synthetic fibers. The unique advantages of laser-based techniques stem from their ability to produce high aspect ratio holes, while yielding low heat affected zones with exceptional surface quality, roundness and taper tolerances. Additionally, the ability to drill blind holes and slots in very hard materials such as diamond, silicon, sapphire, ceramics and steel is of great interest for many applications in microelectronics, semiconductor and automotive industry. This kind of high quality, high aspect ratio micromachining requires high peak power and short pulse durations.

JPRS report: Science and Technology. Europe and Latin America

NASA Astrophysics Data System (ADS)

1988-01-01

Articles from the popular and trade press are included on the following subjects: advanced materials, aerospace industry, automotive industry, biotechnology, computers, factory automation and robotics, microelectronics, and science and technology policy. The aerospace articles discuss briefly and in a nontechnical way the SAGEM bubble memories for space applications, Ariane V new testing facilities, innovative technologies of TDF-1 satellite, and the restructuring of the Aviation Division at France's Aerospatiale.

Method of forming crystalline silicon devices on glass

DOEpatents

McCarthy, A.M.

1995-03-21

A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.

Effect of an Interfacial Layer on Electron Tunneling through Atomically Thin Al2O3 Tunnel Barriers.

PubMed

Wilt, Jamie; Sakidja, Ridwan; Goul, Ryan; Wu, Judy Z

2017-10-25

Electron tunneling through high-quality, atomically thin dielectric films can provide a critical enabling technology for future microelectronics, bringing enhanced quantum coherent transport, fast speed, small size, and high energy efficiency. A fundamental challenge is in controlling the interface between the dielectric and device electrodes. An interfacial layer (IL) will contain defects and introduce defects in the dielectric film grown atop, preventing electron tunneling through the formation of shorts. In this work, we present the first systematic investigation of the IL in Al 2 O 3 dielectric films of 1-6 Å's in thickness on an Al electrode. We integrated several advanced approaches: molecular dynamics to simulate IL formation, in situ high vacuum sputtering atomic layer deposition (ALD) to synthesize Al 2 O 3 on Al films, and in situ ultrahigh vacuum scanning tunneling spectroscopy to probe the electron tunneling through the Al 2 O 3 . The IL had a profound effect on electron tunneling. We observed a reduced tunnel barrier height and soft-type dielectric breakdown which indicate that defects are present in both the IL and in the Al 2 O 3 . The IL forms primarily due to exposure of the Al to trace O 2 and/or H 2 O during the pre-ALD heating step of fabrication. As the IL was systematically reduced, by controlling the pre-ALD sample heating, we observed an increase of the ALD Al 2 O 3 barrier height from 0.9 to 1.5 eV along with a transition from soft to hard dielectric breakdown. This work represents a key step toward the realization of high-quality, atomically thin dielectrics with electron tunneling for the next generation of microelectronics.

Experiences with integral microelectronics on smart structures for space

NASA Astrophysics Data System (ADS)

Nye, Ted; Casteel, Scott; Navarro, Sergio A.; Kraml, Bob

1995-05-01

One feature of a smart structure implies that some computational and signal processing capability can be performed at a local level, perhaps integral to the controlled structure. This requires electronics with a minimal mechanical influence regarding structural stiffening, heat dissipation, weight, and electrical interface connectivity. The Advanced Controls Technology Experiment II (ACTEX II) space-flight experiments implemented such a local control electronics scheme by utilizing composite smart members with integral processing electronics. These microelectronics, tested to MIL-STD-883B levels, were fabricated with conventional thick film on ceramic multichip module techniques. Kovar housings and aluminum-kapton multilayer insulation was used to protect against harsh space radiation and thermal environments. Development and acceptance testing showed the electronics design was extremely robust, operating in vacuum and at temperature range with minimal gain variations occurring just above room temperatures. Four electronics modules, used for the flight hardware configuration, were connected by a RS-485 2 Mbit per second serial data bus. The data bus was controlled by Actel field programmable gate arrays arranged in a single master, four slave configuration. An Intel 80C196KD microprocessor was chosen as the digital compensator in each controller. It was used to apply a series of selectable biquad filters, implemented via Delta Transforms. Instability in any compensator was expected to appear as large amplitude oscillations in the deployed structure. Thus, over-vibration detection circuitry with automatic output isolation was incorporated into the design. This was not used however, since during experiment integration and test, intentionally induced compensator instabilities resulted in benign mechanical oscillation symptoms. Not too surprisingly, it was determined that instabilities were most detectable by large temperature increases in the electronics, typically noticeable within minutes of unstable operation.

Sandia QIS Capabilities.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muller, Richard P.

2017-07-01

Sandia National Laboratories has developed a broad set of capabilities in quantum information science (QIS), including elements of quantum computing, quantum communications, and quantum sensing. The Sandia QIS program is built atop unique DOE investments at the laboratories, including the MESA microelectronics fabrication facility, the Center for Integrated Nanotechnologies (CINT) facilities (joint with LANL), the Ion Beam Laboratory, and ASC High Performance Computing (HPC) facilities. Sandia has invested $75 M of LDRD funding over 12 years to develop unique, differentiating capabilities that leverage these DOE infrastructure investments.

A Multidisciplinary Approach to High Throughput Nuclear Magnetic Resonance Spectroscopy

PubMed Central

Pourmodheji, Hossein; Ghafar-Zadeh, Ebrahim; Magierowski, Sebastian

2016-01-01

Nuclear Magnetic Resonance (NMR) is a non-contact, powerful structure-elucidation technique for biochemical analysis. NMR spectroscopy is used extensively in a variety of life science applications including drug discovery. However, existing NMR technology is limited in that it cannot run a large number of experiments simultaneously in one unit. Recent advances in micro-fabrication technologies have attracted the attention of researchers to overcome these limitations and significantly accelerate the drug discovery process by developing the next generation of high-throughput NMR spectrometers using Complementary Metal Oxide Semiconductor (CMOS). In this paper, we examine this paradigm shift and explore new design strategies for the development of the next generation of high-throughput NMR spectrometers using CMOS technology. A CMOS NMR system consists of an array of high sensitivity micro-coils integrated with interfacing radio-frequency circuits on the same chip. Herein, we first discuss the key challenges and recent advances in the field of CMOS NMR technology, and then a new design strategy is put forward for the design and implementation of highly sensitive and high-throughput CMOS NMR spectrometers. We thereafter discuss the functionality and applicability of the proposed techniques by demonstrating the results. For microelectronic researchers starting to work in the field of CMOS NMR technology, this paper serves as a tutorial with comprehensive review of state-of-the-art technologies and their performance levels. Based on these levels, the CMOS NMR approach offers unique advantages for high resolution, time-sensitive and high-throughput bimolecular analysis required in a variety of life science applications including drug discovery. PMID:27294925

The Development of Layered Photonic Band Gap Structures Using a Micro-Transfer Molding Technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sutherland, Kevin Jerome

Over the last ten years, photonic band gap (PBG) theory and technology have become an important area of research because of the numerous possible applications ranging from high-efficiency laser diodes to optical circuitry. This research concentrates on reducing the length scale in the fabrication of layered photonic band gap structures and developing procedures to improve processing consistency. Various procedures and materials have been used in the fabrication of layered PBG structures. This research focused on an economical micro transfer molding approach to create the final PBG structure. A poly dimethylsiloxane (PDMS) rubber mold was created from a silicon substrate. Itmore » was filled with epoxy and built layer-by-layer to create a 3-D epoxy structure. This structure was infiltrated with nanoparticle titania or a titania sol-gel, then fired to remove the polymer mold, leaving a monolithic ceramic inverse of the epoxy structure. The final result was a lattice of titania rolds that resembles a face-centered tetragonal structure. The original intent of this research was to miniaturize this process to a bar size small enough to create a photonic band gap for wavelengths of visible electro-magnetic radiation. The factor limiting progress was the absence of a silicon master mold of small enough dimensions. The Iowa State Microelectronics Research Center fabricated samples with periodicities of 2.5 and 1.0 microns with the existing technology, but a sample was needed on the order of 0.3 microns or less. A 0.4 micron sample was received from Sandia National Laboratory, which was made through an electron beam lithography process, but it contained several defects. The results of the work are primarily from the 2.5 and 1.0 micron samples. Most of the work focused on changing processing variables in order to optimize the infiltration procedure for the best results. Several critical parameters were identified, ranging from the ambient conditions to the specifics of the procedure. It is believed that most critical for fabrication of high quality samples is control of the temperature of the sample during and after infiltration, and the rate and amount of time spent applying epoxy to the PDMS.« less

Planning for the semiconductor manufacturer of the future

NASA Technical Reports Server (NTRS)

Fargher, Hugh E.; Smith, Richard A.

1992-01-01

Texas Instruments (TI) is currently contracted by the Air Force Wright Laboratory and the Defense Advanced Research Projects Agency (DARPA) to develop the next generation flexible semiconductor wafer fabrication system called Microelectronics Manufacturing Science & Technology (MMST). Several revolutionary concepts are being pioneered on MMST, including the following: new single-wafer rapid thermal processes, in-situ sensors, cluster equipment, and advanced Computer Integrated Manufacturing (CIM) software. The objective of the project is to develop a manufacturing system capable of achieving an order of magnitude improvement in almost all aspects of wafer fabrication. TI was awarded the contract in Oct., 1988, and will complete development with a fabrication facility demonstration in April, 1993. An important part of MMST is development of the CIM environment responsible for coordinating all parts of the system. The CIM architecture being developed is based on a distributed object oriented framework made of several cooperating subsystems. The software subsystems include the following: process control for dynamic control of factory processes; modular processing system for controlling the processing equipment; generic equipment model which provides an interface between processing equipment and the rest of the factory; specification system which maintains factory documents and product specifications; simulator for modelling the factory for analysis purposes; scheduler for scheduling work on the factory floor; and the planner for planning and monitoring of orders within the factory. This paper first outlines the division of responsibility between the planner, scheduler, and simulator subsystems. It then describes the approach to incremental planning and the way in which uncertainty is modelled within the plan representation. Finally, current status and initial results are described.

Wide area detection system: Conceptual design study. [using television and microelectronic technology

NASA Technical Reports Server (NTRS)

Hilbert, E. E.; Carl, C.; Goss, W.; Hansen, G. R.; Olsasky, M. J.; Johnston, A. R.

1978-01-01

An integrated sensor for traffic surveillance on mainline sections of urban freeways is described. Applicable imaging and processor technology is surveyed and the functional requirements for the sensors and the conceptual design of the breadboard sensors are given. Parameters measured by the sensors include lane density, speed, and volume. The freeway image is also used for incident diagnosis.

Microelectronic electroporation array

NASA Astrophysics Data System (ADS)

Johnson, Lee J.; Shaffer, Kara J.; Skeath, Perry; Perkins, Frank K.; Pancrazio, Joseph; Scribner, Dean

2004-06-01

Gene Array technology has allowed for the study of gene binding by creating thousands of potential binding sites on a single device. A limitation of the current technology is that the effects of the gene and the gene-derived proteins cannot be studied in situ the same way, thousand site cell arrays are not readily available. We propose a new device structure to study the effects of gene modification on cells. This new array technology uses electroporation to target specific areas within a cell culture for transfection of genes. Electroporation arrays will allow high throughput analysis of gene effects on a given cell's response to a stress or a genes ability to restore normal cell function in disease modeling cells. Fluorescent imaging of dye labeled indicator molecules or cell viability will provide results indicating the most effective genes. The electroporation array consists of a microelectronic circuit, ancillary electronics, protecting electrode surface for cell culturing and a perfusion system for gene or drug delivery. The advantages of the current device are that there are 3200 sites for electroporation, all or any subsets of the electrodes can be activated. The cells are held in place by the electrode material. This technology could also be applied to high throughput screening of cell impermeant drugs.

JPRS report: Science and technology. Europe and Latin America

NASA Astrophysics Data System (ADS)

1988-01-01

Articles from the popular and trade press of Western Europe and Latin America are presented on advanced materials, aerospace and civial aviation, computers, defense industries, factory automation and robotics, lasers, senors, optics microelectronics, science and technology policy, biotechnology, marine technology, and nuclear developments. The aerospace articles include an overview of Austrian space activities and plans and a report on a panel of West German experts recommending against self-sufficiency for the Airbus.

Information Systems and Development in the Third World.

ERIC Educational Resources Information Center

Heitzman, James

1990-01-01

Discussion of the relationship between information and development in Third World countries highlights information systems development in four South Asian nations: India, Pakistan, Sri Lanka, and Bangladesh. The impact of microelectronics technology, development theories, multinational corporations, international information agencies, and…

Fabrication and Doping Methods for Silicon Nano- and Micropillar Arrays for Solar-Cell Applications: A Review.

PubMed

Elbersen, Rick; Vijselaar, Wouter; Tiggelaar, Roald M; Gardeniers, Han; Huskens, Jurriaan

2015-11-18

Silicon is one of the main components of commercial solar cells and is used in many other solar-light-harvesting devices. The overall efficiency of these devices can be increased by the use of structured surfaces that contain nanometer- to micrometer-sized pillars with radial p/n junctions. High densities of such structures greatly enhance the light-absorbing properties of the device, whereas the 3D p/n junction geometry shortens the diffusion length of minority carriers and diminishes recombination. Due to the vast silicon nano- and microfabrication toolbox that exists nowadays, many versatile methods for the preparation of such highly structured samples are available. Furthermore, the formation of p/n junctions on structured surfaces is possible by a variety of doping techniques, in large part transferred from microelectronic circuit technology. The right choice of doping method, to achieve good control of junction depth and doping level, can contribute to an improvement of the overall efficiency that can be obtained in devices for energy applications. A review of the state-of-the-art of the fabrication and doping of silicon micro and nanopillars is presented here, as well as of the analysis of the properties and geometry of thus-formed 3D-structured p/n junctions. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Co-polymerization of methyl methacrylate and styrene via surfactant-free emulsion polymerization, as a potential material for photonic crystal application

NASA Astrophysics Data System (ADS)

Kassim, Syara; Zahari, Siti Balqis; Tahrin, Rabiatul Addawiyah Azwa; Harun, Noor Aniza

2017-09-01

Photonic crystals are being the great interest of researcher to studies due to a variety of potential application for the interaction of light including the solar cells, optical sensors and paints. In order to evaluate the fabrication of photonic crystals thin film, a free-emulsifier emulsion copolymerization of styrene and methyl methacrylate was carried out. By using the self -assembly approach, this method offers the opportunity to produce crystalline polymer sphere in more ease operation, low cost and environmental friendly. The influences of the mixing ratio of monomer and amount of initiators were studied. In advance, the presence of styrene as co-monomer had improved the thermal degradation of polymer methyl methacrylate. While in changing the mixing ratio of styrene and methyl methacrylate resulted in particle size of the sphere. The size of polymer particles slightly increased on increasing volume of styrene monomer ratio. This occurred because the properties of styrene in water where it sparingly soluble and lead to coagulation of particles. This simple, yet effective method for preparing functional complex 3D structures has the potential to be used generically to fabricate a variety of functional porous 3D structures that could find application not only in new or improved photonic crystal (PC) devices but also in areas such as catalysis, solar cell, separation, fuel cells technology, microelectronics and optoelectronics.

Evaluation of advanced microelectronics for inclusion in MIL-STD-975

NASA Technical Reports Server (NTRS)

Scott, W. Richard

1991-01-01

The approach taken by NASA and JPL (Jet Propulsion Laboratory) in the development of a MIL-STD-975 section which contains advanced technology such as Large Scale Integration and Very Large Scale Integration (LSI/VLSI) microelectronic devices is described. The parts listed in this section are recommended as satisfactory for NASA flight applications, in the absence of alternate qualified devices, based on satisfactory results of a vendor capability audit, the availability of sufficient characterization and reliability data from the manufacturers and users and negotiated detail procurement specifications. The criteria used in the selection and evaluation of the vendors and candidate parts, the preparation of procurement specifications, and the status of this activity are discussed.

The design of radiation-hardened ICs for space - A compendium of approaches

NASA Technical Reports Server (NTRS)

Kerns, Sherra E.; Shafer, B. D; Rockett, L. R., Jr.; Pridmore, J. S.; Berndt, D. F.

1988-01-01

Several technologies, including bulk and epi CMOS, CMOS/SOI-SOS (silicon-on-insulator-silicon-on-sapphire), CML (current-mode logic), ECL (emitter-coupled logic), analog bipolar (JI, single-poly DI, and SOI) and GaAs E/D (enhancement/depletion) heterojunction MESFET, are discussed. The discussion includes the direct effects of space radiation on microelectronic materials and devices, how these effects are evidenced in circuit and device design parameter variations, the particular effects of most significance to each functional class of circuit, specific techniques for hardening high-speed circuits, design examples for integrated systems, including operational amplifiers and A/D (analog/digital) converters, and the computer simulation of radiation effects on microelectronic ISs.

Flexible packaging for microelectronic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, Benjamin John; Nielson, Gregory N.; Cruz-Campa, Jose Luis

An apparatus, method, and system, the apparatus and system including a flexible microsystems enabled microelectronic device package including a microelectronic device positioned on a substrate; an encapsulation layer encapsulating the microelectronic device and the substrate; a protective layer positioned around the encapsulating layer; and a reinforcing layer coupled to the protective layer, wherein the substrate, encapsulation layer, protective layer and reinforcing layer form a flexible and optically transparent package around the microelectronic device. The method including encapsulating a microelectronic device positioned on a substrate within an encapsulation layer; sealing the encapsulated microelectronic device within a protective layer; and coupling themore » protective layer to a reinforcing layer, wherein the substrate, encapsulation layer, protective layer and reinforcing layer form a flexible and optically transparent package around the microelectronic device.« less

1996 Laboratory directed research and development annual report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meyers, C.E.; Harvey, C.L.; Lopez-Andreas, L.M.

This report summarizes progress from the Laboratory Directed Research and Development (LDRD) program during fiscal year 1996. In addition to a programmatic and financial overview, the report includes progress reports from 259 individual R&D projects in seventeen categories. The general areas of research include: engineered processes and materials; computational and information sciences; microelectronics and photonics; engineering sciences; pulsed power; advanced manufacturing technologies; biomedical engineering; energy and environmental science and technology; advanced information technologies; counterproliferation; advanced transportation; national security technology; electronics technologies; idea exploration and exploitation; production; and science at the interfaces - engineering with atoms.

On-Campus Projects: Inventing a Microchip.

ERIC Educational Resources Information Center

Basta, Nicholas

1985-01-01

In response to growth of microelectronics and changes in microchip design/manufacturing technology, universities are supporting class projects for students. Approximately 50 schools now conduct such programs which have resulted from earlier National Science Foundation sponsorship. Major advantages for the students include designing experience,…

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sopori, B.

The 11th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and non-photovoltaic fields. Discussions will include the various aspects of impurities and defects in silicon--their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. Sessions and panel discussions will review impurities and defects in crystalline-silicon PV, advanced cell structures, new processes and process characterization techniques, and future manufacturing demands. The workshop will emphasize some of the promising new technologies in Si solar cell fabrication that can lower PVmore » energy costs and meet the throughput demands of the future. The three-day workshop will consist of presentations by invited speakers, followed by discussion sessions. Topics to be discussed are: Si Mechanical properties and Wafer Handling, Advanced Topics in PV Fundamentals, Gettering and Passivation, Impurities and Defects, Advanced Emitters, Crystalline Silicon Growth, and Solar Cell Processing. The workshop will also include presentations by NREL subcontractors who will review the highlights of their research during the current subcontract period. In addition, there will be two poster sessions presenting the latest research and development results. Some presentations will address recent technologies in the microelectronics field that may have a direct bearing on PV.« less

Microelectronics Revolution And The Impact Of Automation In The New Industrialized Countries

NASA Astrophysics Data System (ADS)

Baranauskas, Vitor

1984-08-01

A brief review of some important historical points on the origin of the Factories and the Industrial Revolution is presented with emphasis in the social problems related to the automation of the human labor. Until the World War I, the social changes provoked by the Industrial Revolution caused one division of the World in developed and underdeveloped countries. After that period, the less developed nations began their industrialization mainly through the Multinationals Corporations (MC). These enterprises were very important to the production and exportation of utilities and manufactures in general, mainly in those products which required intensive and direct human labor. At present time, with the pervasiveness of microelectronics in the automation, this age seems to reaching an end because all continous processes in industry tend economicaly toward total automation. This fact will cause a retraction in long-term investments and, beyond massive unemployment, there is a tendency for these MC industries to return to their original countries. The most promising alternative to avoid these events, and perhaps the unique, is to incentive an autonomous development in areas of high technology, as for instance, the microelectronics itself.

The Impact of New Technology on Skills and Skill Formation in the Banking and Textile Industries. NCEE Brief Number 1.

ERIC Educational Resources Information Center

Bailey, Thomas; Noyelle, Thierry

The subject of this report is the impact of microelectronic technology on the process of skill formation with particular reference to two industries: banking and textiles. A recent research effort sought to identify and understand how changes in the structure and nature of skills were affecting the process of skill formation and the balance of…

USSR Report, Cybernetics Computers and Automation Technology

DTIC Science & Technology

1985-09-05

understand each other excellently, although in their speech they frequently omit, it would seem, needed words. However, the life experience of the...participants in a conversa- tion and their perception of voice intonations and gestures make it possible to fill in the missing elements of speech ...the Soviet Union. Comrade M. S. Gorbachev’s speech pointed out that microelectronics, computer technology, instrument building and the whole

Product Reliability Trends, Derating Considerations and Failure Mechanisms with Scaled CMOS

NASA Technical Reports Server (NTRS)

White, Mark; Vu, Duc; Nguyen, Duc; Ruiz, Ron; Chen, Yuan; Bernstein, Joseph B.

2006-01-01

As microelectronics is scaled into the deep sub-micron regime, space and aerospace users of advanced technology CMOS are reassessing how scaling effects impact long-term product reliability. The effects of electromigration (EM), time-dependent-dielectric-breakdown (TDDB) and hot carrier degradation (HCI and NBTI) wearout mechanisms on scaled technologies and product reliability are investigated, accelerated stress testing across several technology nodes is performed, and FA is conducted to confirm the failure mechanism(s).

Poly-silicon TFT AM-OLED on thin flexible metal substrates

NASA Astrophysics Data System (ADS)

Afentakis, Themis; Hatalis, Miltiadis K.; Voutsas, Apostolos T.; Hartzell, John W.

2003-05-01

Thin metal foils present an excellent alternative to polymers for the fabrication of large area, flexible displays. Their main advantage spurs from their ability to withstand higher temperatures during processing; microelectronic fabrication at elevated temperatures offers the ability to utilize a variety of crystallization processes for the active layer of devices and thermally grown gate dielectrics. This can lead to high performance (high mobility, low threshold voltage) low cost and highly reliable thin film transistors. In some cases, the conductive substrate can also be used to provide power to the active devices, thus reducing layout complexity. This paper discusses the first successful attempt to design and fabricate a variety of active matrix organic light emitting diode displays on thin, flexible stainless steel foils. Different pixel architectures, such as two- and four-transistor implementations, and addressing modes, such as voltage- or current-driven schemese are examined. This work clearly demonstrates the advantages associated with the fabrication of OLED displays on thin metal foils, which - through roll-to-roll processing - can potentially result in revolutionizing today's display processing, leading to a new generation of low cost, high performance versatile display systems.

Applicability of microelectronic and mechanical systems (MEMS) for transportation infrastructure management.

DOT National Transportation Integrated Search

2008-08-11

It will be advantageous to have information on the state of health of infrastructure at all times in : order to carry out effective on-demand maintenance. With the tremendous advancement in technology, it is : possible to employ devices embedded in s...

IEEE WMED 2016 Homepage

Science.gov Websites

characterization, design, and new device technologies. This workshop will consist of invited talks, contributed and Reliability Semiconductor package reliability, Design for Manufacturability, Stacked die packaging and Novel assembly processes Microelectronic Circuit Design New product design, high-speed and/or low

Simple Chemical Vapor Deposition Experiment

ERIC Educational Resources Information Center

Pedersen, Henrik

2014-01-01

Chemical vapor deposition (CVD) is a process commonly used for the synthesis of thin films for several important technological applications, for example, microelectronics, hard coatings, and smart windows. Unfortunately, the complexity and prohibitive cost of CVD equipment makes it seldom available for undergraduate chemistry students. Here, a…

Methodology of Education and R&D in Mechatronics.

ERIC Educational Resources Information Center

Yamazaki, K.; And Others

1985-01-01

Describes the concept and methodology of "mechatronics" (application of microelectronics to mechanism control) and research and development (R&D) projects through the activities initiated at the Precision Machining Laboratory of the Department of Production Systems Engineering of the new Toyohashi University of Technology. (JN)

FBIS report. Science and technology: Europe/International, March 29, 1996

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

1996-03-29

;Partial Contents: Advanced Materials (EU Project to Improve Production in Metal Matrix Compounds Noted, Germany: Extremely Hard Carbon Coating Development, Italy: Director of CNR Metallic Materials Institute Interviewed); Aerospace (ESA Considers Delays, Reductions as Result of Budget Cuts, Italy: Space Agency`s Director on Restructuring, Future Plans); Automotive, Transportation (EU: Clean Diesel Engine Technology Research Reviewed); Biotechnology (Germany`s Problems, Successes in Biotechnology Discussed); Computers (EU Europort Parallel Computing Project Concluded, Italy: PQE 2000 Project on Massively Parallel Systems Viewed); Defense R&D (France: Future Tasks of `Brevel` Military Intelligence Drone Noted); Energy, Environment (German Scientist Tests Elimination of Phosphates); Advanced Manufacturing (France:more » Advanced Rapid Prototyping System Presented); Lasers, Sensors, Optics (France: Strategy of Cilas Laser Company Detailed); Microelectronics (France: Simulation Company to Develop Microelectronic Manufacturing Application); Nuclear R&D (France: Megajoule Laser Plan, Cooperation with Livermore Lab Noted); S&T Policy (EU Efforts to Aid Small Companies` Research Viewed); Telecommunications (France Telecom`s Way to Internet).« less

Trends in Dielectric Etch for Microelectronics Processing

NASA Astrophysics Data System (ADS)

Hudson, Eric A.

2003-10-01

Dielectric etch technology faces many challenges to meet the requirements for leading-edge microelectronics processing. The move to sub 100-nm device design rules increases the aspect ratios of certain features, imposes tighter restrictions on etched features' critical dimensions, and increases the density of closely packed arrays of features. Changes in photolithography are driving transitions to new photoresist materials and novel multilayer resist methods. The increasing use of copper metallization and low-k interlayer dielectric materials has introduced dual-damascene integration methods, with specialized dielectric etch applications. A common need is the selective removal of multiple layers which have very different compositions, while maintaining close control of the etched features' profiles. To increase productivity, there is a growing trend toward in-situ processing, which allows several films to be successively etched during a single pass through the process module. Dielectric etch systems mainly utilize capacitively coupled etch reactors, operating with medium-density plasmas and low gas residence time. Commercial technology development increasingly relies upon plasma diagnostics and modeling to reduce development cycle time and maximize performance.

Demonstration of single crystal growth via solid-solid transformation of a glass

DOE PAGES

Savytskii, Dmytro; Knorr, Brian; Dierolf, Volkmar; ...

2016-03-18

Many advanced technologies have relied on the availability of single crystals of appropriate material such as silicon for microelectronics or superalloys for turbine blades. Similarly, many promising materials could unleash their full potential if they were available in a single crystal form. However, the current methods are unsuitable for growing single crystals of these oftentimes incongruently melting, unstable or metastable materials. Here we demonstrate a strategy to overcome this hurdle by avoiding the gaseous or liquid phase, and directly converting glass into a single crystal. Specifically, Sb 2S 3 single crystals are grown in Sb-S-I glasses as an example ofmore » this approach. In this first unambiguous demonstration of an all-solid-state glass → crystal transformation, extraneous nucleation is avoided relative to crystal growth via spatially localized laser heating and inclusion of a suitable glass former in the composition. Lastly, the ability to fabricate patterned single-crystal architecture on a glass surface is demonstrated, providing a new class of micro-structured substrate for low cost epitaxial growth, active planar devices, etc.« less

A 0.18 μm CMOS low-power radiation sensor for asynchronous event-driven UWB wireless transmission

NASA Astrophysics Data System (ADS)

Bastianini, S.; Crepaldi, M.; Demarchi, D.; Gabrielli, A.; Lolli, M.; Margotti, A.; Villani, G.; Zhang, Z.; Zoccoli, G.

2013-12-01

The paper describes the design of a readout element, proposed as a radiation monitor, which implements an embedded sensor based on a floating-gate transistor. The paper shows the design of a microelectronic circuit composed of a sensor, an oscillator, a modulator, a transmitter and an integrated antenna. A prototype chip has recently been fabricated and tested exploiting a commercial 180 nm, four metal CMOS technology. Simulation results of the entire behavior of the circuit before submission are presented along with some measurements of the actual chip response. In addition, preliminary tests of the performance of the Ultra-Wide Band transmission via the integrated antenna are summarized. As the complete chip prototype area is less than 1 mm2, the chip fits a large variety of applications, from spot radiation monitoring systems in medicine to punctual measurements of radiation level in High-Energy Physics experiments. A sensitivity of 1 mV/rad was estimated within an absorbed dose range up to 10 krad and a total power consumption of about 165 μW.

Miniature high-let radiation spectrometer for space and avionics applications

NASA Astrophysics Data System (ADS)

Stassinopoulos, E. G.; Stauffer, Craig A.; Brucker, G. J.

This paper reports on the design and characterization of a small, low-power, and low-weight instrument, a High-LET Radiation Spectrometer (HiLRS), that measures energy deposited by heavy ions in microelectronic devices. The HiLRS operates on pulse-height analysis principles and is designed for space and avionics applications. The detector component in the instrument is based on large scale arrays of p-n junctions. In this system, the pulse amplitude from a particle hit is directly proportional to the particle LET. A prototype flight unit has been fabricated and calibrated using several heavy ions with varying LETs and protons with several energies. The unit has been delivered to the Ballistic Missile Defense Organization (BMDO) c/o the Air Force Research Laboratory in Albuquerque, NM, for integration into the military Space Technology Research Vehicle (STRV), a US-UK cooperative mission. Another version of HiLRS is being prepared for delivery in April to the Hubble Space Telescope (HST) project, to fly on the HST Orbital Systems Test (HOST) platform on a shuttle mission.

Design and evaluation of potentiometric principles for bladder volume monitoring: a preliminary study.

PubMed

Chen, Shih-Ching; Hsieh, Tsung-Hsun; Fan, Wen-Jia; Lai, Chien-Hung; Chen, Chun-Lung; Wei, Wei-Feng; Peng, Chih-Wei

2015-06-01

Recent advances in microelectronics and wireless transmission technology have led to the development of various implantable sensors for real-time monitoring of bladder conditions. Although various sensing approaches for monitoring bladder conditions were reported, most such sensors have remained at the laboratory stage due to the existence of vital drawbacks. In the present study, we explored a new concept for monitoring the bladder capacity on the basis of potentiometric principles. A prototype of a potentiometer module was designed and fabricated and integrated with a commercial wireless transmission module and power unit. A series of in vitro pig bladder experiments was conducted to determine the best design parameters for implementing the prototype potentiometric device and to prove its feasibility. We successfully implemented the potentiometric module in a pig bladder model in vitro, and the error of the accuracy of bladder volume detection was <±3%. Although the proposed potentiometric device was built using a commercial wireless module, the design principles and animal experience gathered from this research can serve as a basis for developing new implantable bladder sensors in the future.

Ultra-doped n-type germanium thin films for sensing in the mid-infrared

PubMed Central

Prucnal, Slawomir; Liu, Fang; Voelskow, Matthias; Vines, Lasse; Rebohle, Lars; Lang, Denny; Berencén, Yonder; Andric, Stefan; Boettger, Roman; Helm, Manfred; Zhou, Shengqiang; Skorupa, Wolfgang

2016-01-01

A key milestone for the next generation of high-performance multifunctional microelectronic devices is the monolithic integration of high-mobility materials with Si technology. The use of Ge instead of Si as a basic material in nanoelectronics would need homogeneous p- and n-type doping with high carrier densities. Here we use ion implantation followed by rear side flash-lamp annealing (r-FLA) for the fabrication of heavily doped n-type Ge with high mobility. This approach, in contrast to conventional annealing procedures, leads to the full recrystallization of Ge films and high P activation. In this way single crystalline Ge thin films free of defects with maximum attained carrier concentrations of 2.20 ± 0.11 × 1020 cm−3 and carrier mobilities above 260 cm2/(V·s) were obtained. The obtained ultra-doped Ge films display a room-temperature plasma frequency above 1,850 cm−1, which enables to exploit the plasmonic properties of Ge for sensing in the mid-infrared spectral range. PMID:27282547

Soft-Matter Printed Circuit Board with UV Laser Micropatterning.

PubMed

Lu, Tong; Markvicka, Eric J; Jin, Yichu; Majidi, Carmel

2017-07-05

When encapsulated in elastomer, micropatterned traces of Ga-based liquid metal (LM) can function as elastically deformable circuit wiring that provides mechanically robust electrical connectivity between solid-state elements (e.g., transistors, processors, and sensor nodes). However, LM-microelectronics integration is currently limited by challenges in rapid fabrication of LM circuits and the creation of vias between circuit terminals and the I/O pins of packaged electronics. In this study, we address both with a unique layup for soft-matter electronics in which traces of liquid-phase Ga-In eutectic (EGaIn) are patterned with UV laser micromachining (UVLM). The terminals of the elastomer-sealed LM circuit connect to the surface mounted chips through vertically aligned columns of EGaIn-coated Ag-Fe 2 O 3 microparticles that are embedded within an interfacial elastomer layer. The processing technique is compatible with conventional UVLM printed circuit board (PCB) prototyping and exploits the photophysical ablation of EGaIn on an elastomer substrate. Potential applications to wearable computing and biosensing are demonstrated with functional implementations in which soft-matter PCBs are populated with surface-mounted microelectronics.

An introduction to the BANNING design automation system for shuttle microelectronic hardware development

NASA Technical Reports Server (NTRS)

Mcgrady, W. J.

1979-01-01

The BANNING MOS design system is presented. It complements rather than supplant the normal design activities associated with the design and fabrication of low-power digital electronic equipment. BANNING is user-oriented and requires no programming experience to use effectively. It provides the user a simulation capability to aid in his circuit design and it eliminates most of the manual operations involved in the layout and artwork generation of integrated circuits. An example of its operation is given and some additional background reading is provided.

MOEMs devices for future astronomical instrumentation in space

NASA Astrophysics Data System (ADS)

Zamkotsian, Frédéric; Liotard, Arnaud; Lanzoni, Patrick; ElHadi, Kacem; Waldis, Severin; Noell, Wilfried; de Rooij, Nico; Conedera, Veronique; Fabre, Norbert; Muratet, Sylvaine; Camon, Henri

2017-11-01

Based on the micro-electronics fabrication process, Micro-Opto-Electro-Mechanical Systems (MOEMS) are under study in order to be integrated in next-generation astronomical instruments for ground-based and space telescopes. Their main advantages are their compactness, scalability, specific task customization using elementary building blocks, and remote control. At Laboratoire d'Astrophysique de Marseille, we are engaged since several years in the design, realization and characterization of programmable slit masks for multi-object spectroscopy and micro-deformable mirrors for wavefront correction. First prototypes have been developed and show results matching with the requirements.

MOEMs, key optical components for future astronomical instrumentation in space

NASA Astrophysics Data System (ADS)

Zamkotsian, Frédéric; Dohlen, Kjetil; Burgarella, Denis; Ferrari, Marc; Buat, Veronique

2017-11-01

Based on the micro-electronics fabrication process, MicroOpto-Electro-Mechanical Systems (MOEMS) are under study, in order to be integrated in next-generation astronomical instruments and telescopes, especially for space missions. The main advantages of micro-optical components are their compactness, scalability, specific task customization using elementary building blocks, and they allows remote control. As these systems are easily replicable, the price of the components is decreasing dramatically when their number is increasing. The two major applications of MOEMS are Multi-Object Spectroscopy masks and Deformable Mirror systems.

All-fiber pyroelectric nanogenerator

NASA Astrophysics Data System (ADS)

Ghosh, Sujoy Kumar; Xie, Mengying; Bowen, Christopher Rhys; Mandal, Dipankar

2018-04-01

An all-fiber pyroelectric nanogenerator (PyNG) is fabricated where both the active pyroelectric component and the electrodes were composed of fiber. The pyroelectric component was made with randomly organized electrospun PVDF nano-fibers possessing ferroelectric β- and γ-phases. The PyNG possess higher level of sensitivity which can detect very low level of temperature fluctuation, as, low as, 2 K. In addition, the thermal energy harvesting ability of the PyNG under several temperature variations and cycling frequencies paves the way for next generation thermal sensor and self-powered flexible micro-electronics.

Apparatus for assembly of microelectronic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okandan, Murat; Nielson, Gregory N.; Cruz-Campa, Jose Luis

An apparatus including a carrier substrate configured to move a microelectronic device. The apparatus further includes a rotatable body configured to receive the microelectronic device. Additionally, the apparatus includes a second substrate configured to receive the microelectronic device from the rotatable body.

Reliability Considerations of ULP Scaled CMOS in Spacecraft Systems

NASA Technical Reports Server (NTRS)

White, Mark; MacNeal, Kristen; Cooper, Mark

2012-01-01

NASA, the aerospace community, and other high reliability (hi-rel) users of advanced microelectronic products face many challenges as technology continues to scale into the deep sub-micron region. Decreasing the feature size of CMOS devices not only allows more components to be placed on a single chip, but it increases performance by allowing faster switching (or clock) speeds with reduced power compared to larger scaled devices. Higher performance, and lower operating and stand-by power characteristics of Ultra-Low Power (ULP) microelectronics are not only desirable, but also necessary to meet low power consumption design goals of critical spacecraft systems. The integration of these components in such systems, however, must be balanced with the overall risk tolerance of the project.

Electrochemical investigations of advanced materials for microelectronic and energy storage devices

NASA Astrophysics Data System (ADS)

Goonetilleke, Pubudu Chaminda

A broad range of electrochemical techniques are employed in this work to study a selected set of advanced materials for applications in microelectronics and energy storage devices. The primary motivation of this study has been to explore the capabilities of certain modern electrochemical techniques in a number of emerging areas of material processing and characterization. The work includes both aqueous and non-aqueous systems, with applications in two rather general areas of technology, namely microelectronics and energy storage. The sub-systems selected for investigation are: (i) Electrochemical mechanical and chemical mechanical planarization (ECMP and CMP, respectively), (ii) Carbon nanotubes in combination with room temperature ionic liquids (ILs), and (iii) Cathode materials for high-performance Li ion batteries. The first group of systems represents an important building block in the fabrication of microelectronic devices. The second and third groups of systems are relevant for new energy storage technologies, and have generated immense interests in recent years. A common feature of these different systems is that they all are associated with complex surface reactions that dictate the performance of the devices based on them. Fundamental understanding of these reactions is crucial to further development and expansion of their associated technologies. It is the complex mechanistic details of these surface reactions that we address using a judicious combination of a number of state of the art electrochemical techniques. The main electrochemical techniques used in this work include: (i) Cyclic voltammetry (CV) and slow scan cyclic voltammetry (SSCV, a special case of CV); (ii) Galvanostatic (or current-controlled) measurements; (iii) Electrochemical impedance spectroscopy (EIS), based on two different methodologies, namely, Fourier transform EIS (FT-EIS, capable of studying fast reaction kinetics in a time-resolved mode), and EIS using frequency response analysis (employed to study slow reactions such as solid state diffusion of Li). The designs of both the experimental equipment and the control variables change for studying the different aqueous and non-aqueous systems. The protocols for data analysis also change depending on the systems. In addition, it often becomes necessary to combine different aspects of the different experimental methods to obtain the necessary information about the system(s) under study. The experimental strategies and the associated theoretical considerations for developing these strategies are discussed in appropriate contexts of this work. CNT electrodes in combination with IL electrolytes are potentially important for electrochemical super-capacitors. We have carried out electrochemical investigation of such a system involving a paper-electrode of multiwall CNT in the IL of 1-Ethyl-3-methyl imidazolium ethylsulfate (EMIM-EtSO4). Our study concentrated on the analytical aspects of cyclic voltammetry (CV) to probe the double layer capacitance of these relatively unconventional systems. (that involve rather large charge-discharge time constants). Both theoretical and experimental aspects of CV for such systems have been discussed, focusing in particular, on the effects of faradaic side-reactions, electrolyte resistance and voltage scan speeds. The results have been analyzed using an electrode equivalent circuit model, demonstrating a method to account for the typical artifacts expected in CV of CNT-IL interfaces. Chemical-mechanical planarization (CMP) of copper has now become an integral part of modern semiconductor fabrication technology. Recently, electrochemical-mechanical planarization (ECMP) has emerged as a possible extension of CMP, where through voltage-activated removal of Cu surface layers, one can substantially minimize the down-force necessary for mechanical polishing However, the detailed electrochemical factors that are central to designing efficient abrasive-free electrolytes for ECMP are not clearly understood at the present time. The present work has addressed this issue by studying the relative electrochemical effects of selected different chemical additives. Controlling the surface reactions (that is controlling the voltage-induced material removal) in ECMP requires a carefully designed combination of a number of electrochemical input variables (voltage activation program and electrolyte composition). We have studied the main experimental factors for designing these parameters, using triangular and rectangular-voltage-pulse modulated dissolution of Cu in electrolytes of different chemical compositions. Applications of rechargeable Li ion batteries have considerably expanded in recent years. As a result, research activities involving material-fabrication and characterization for these batteries also have expanded during this period. The importance of studying these specific materials lies in the fact that the cathode plays a major role in its contribution to the battery performance LiMn2O4 cathodes are being considered for next generation of Li ion batteries. The current work focuses on a specific problem commonly associated with Li cathode systems, namely surface film formation on the cathodes. LiMn2O4 cathodes tend to develop native surface films in carbonate electrolytes. By combining D.C. SSCV with A.C. EIS, we have studied how these films would react with an electrolyte of LiBF4 in ethylene and diethyl carbonates. We have demonstrated that such reactions could affect the measurement of the characteristic electrochemical parameters of the cathode, namely the intercalation capacitance, initial capacity-loss, coulometric titration profiles, and the solid state diffusion coefficient of Li+. A generalized framework for data analysis, based on the considerations of electrode equivalent circuits, has been used to combine the results of the D.C. and A.C. measurements.

Smart Materials for Electromagnetic and Optical Applications

NASA Astrophysics Data System (ADS)

Ramesh, Prashanth

The research presented in this dissertation focuses on the development of solid-state materials that have the ability to sense, act, think and communicate. Two broad classes of materials, namely ferroelectrics and wideband gap semiconductors were investigated for this purpose. Ferroelectrics possess coupled electromechanical behavior which makes them sensitive to mechanical strains and fluctuations in ambient temperature. Use of ferroelectrics in antenna structures, especially those subject to mechanical and thermal loads, requires knowledge of the phenomenological relationship between the ferroelectric properties of interest (especially dielectric permittivity) and the external physical variables, viz. electric field(s), mechanical strains and temperature. To this end, a phenomenological model of ferroelectric materials based on the Devonshire thermodynamic theory was developed. This model was then used to obtain a relationship expressing the dependence of the dielectric permittivity on the mechanical strain, applied electric field and ambient temperature. The relationship is shown to compare well with published experimental data and other related models in literature. A model relating ferroelectric loss tangent to the applied electric field and temperature is also discussed. Subsequently, relationships expressing the dependence of antenna operating frequency and radiation efficiency on those external physical quantities are described. These relationships demonstrate the tunability of load-bearing antenna structures that integrate ferroelectrics when they are subjected to mechanical and thermal loads. In order to address the inability of ferroelectrics to integrate microelectronic devices, a feature needed in a material capable of sensing, acting, thinking and communicating, the material Gallium Nitride (GaN) is pursued next. There is an increasing utilization of GaN in the area of microelectronics due to the advantages it offers over other semiconductors. This dissertation demonstrates GaN as a candidate material well suited for novel microelectromechanical systems. The potential of GaN for MEMS is demonstrated via the design, analysis, fabrication, testing and characterization of an optical microswitch device actuated by piezoelectric and electrostrictive means. The piezoelectric and electrostrictive properties of GaN and its differences from common piezoelectrics are discussed before elaborating on the device configuration used to implement the microswitch device. Next, the development of two recent fabrication technologies, Photoelectrochemical etch and Bias-enabled Dark Electrochemical etch, used to realize the 3-dimensional device structure in GaN are described in detail. Finally, an ultra-low-cost, laser-based, non-contact approach to test and characterize the microswitch device is described, followed by the device testing results.

Japan's technology and manufacturing infrastructure

NASA Astrophysics Data System (ADS)

Boulton, William R.; Meieran, Eugene S.; Tummala, Rao R.

1995-02-01

The JTEC panel found that, after four decades of development in electronics and manufacturing technologies, Japanese electronics companies are leaders in the development, support, and management of complex, low-cost packaging and assembly technologies used in the production of a broad range of consumer electronics products. The electronics industry's suppliers provide basic materials and equipment required for electronic packaging applications. Panelists concluded that some Japanese firms could be leading U.S. competitors by as much as a decade in these areas. Japan's technology and manufacturing infrastructure is an integral part of its microelectronics industry's success.

Japan's technology and manufacturing infrastructure

NASA Technical Reports Server (NTRS)

Boulton, William R.; Meieran, Eugene S.; Tummala, Rao R.

1995-01-01

The JTEC panel found that, after four decades of development in electronics and manufacturing technologies, Japanese electronics companies are leaders in the development, support, and management of complex, low-cost packaging and assembly technologies used in the production of a broad range of consumer electronics products. The electronics industry's suppliers provide basic materials and equipment required for electronic packaging applications. Panelists concluded that some Japanese firms could be leading U.S. competitors by as much as a decade in these areas. Japan's technology and manufacturing infrastructure is an integral part of its microelectronics industry's success.

Advance Power Technology Experiment for the Starshine 3 Satellite

NASA Technical Reports Server (NTRS)

Jenkins, Phillip; Scheiman, David; Wilt, David; Raffaelle, Ryne; Button, Robert; Smith, Mark; Kerslake, Thomas; Miller, Thomas; Bailey, Sheila (Technical Monitor); Hepp, A. (Technical Monitor)

2001-01-01

The Starshine 3 satellite will carry several power technology demonstrations. Since Starshine 3 is primarily a passive experiment and does not need electrical power to successfully complete its mission, the requirement for a highly reliable power system is greatly reduced. This creates an excellent opportunity to test new power technologies. Several government and commercial interests have teamed up to provide Starshine 3 with a small power system using state-of-the-art components. Starshine 3 will also fly novel integrated microelectronic power supplies (IWS) for evaluation.

Advance Power Technology Demonstration on Starshine 3

NASA Technical Reports Server (NTRS)

Jenkins, Phillip; Scheiman, David; Wilt, David; Raffaelle, Ryne; Button, Robert; Smith, Mark; Kerslake, Thomas; Miller, Thomas

2002-01-01

The Starshine 3 satellite will carry several power technology demonstrations. Since Starshine 3 is primarily a passive experiment and does not need electrical power to successfully complete its mission, the requirement for a highly reliable power system is greatly reduced. This creates an excellent opportunity to test new power technologies. Several government and commercial interests have teamed up to provide Starshine 3 with a small power system using state-of-the-art components. Starshine 3 will also fly novel integrated microelectronic power supplies (IMPS) for evaluation.

Contributions to the initial development of a microelectromechanical loop heat pipe, which is based on coherent porous silicon

NASA Astrophysics Data System (ADS)

Cytrynowicz, Debra G.

The research project itself was the initiation of the development of a planar miniature loop heat pipe based on a capillary wick structure made of coherent porous silicon. Work on this project fell into four main categories, which were component fabrication, test system construction, characterization testing and test data collection, performance analysis and thermal modeling. Component fabrication involved the production of various components for the evaporator. When applicable, these components were to be produced by microelectronic and MEMS or microelectromechanical fabrication techniques. Required work involved analyses and, where necessary, modifications to the wafer processing sequence, the photo-electrochemical etching process, system and controlling computer program to make it more reliable, flexible and efficient. The development of more than one wick production process was also extremely necessary in the event of equipment failure. Work on developing this alternative also involved investigations into various details of the photo-electrochemical etching process itself. Test system construction involved the actual assembly of open and closed loop test systems. Characterization involved developing and administering a series of tests to evaluate the performance of the wicks and test systems. Although there were some indications that the devices were operating according to loop heat pipe theory, they were transient and unstable. Performance analysis involved the construction of a transparent evaporator, which enabled the visual observation of the phenomena, which occurred in the evaporator during operation. It also involved investigating the effect of the quartz wool secondary wick on the operation of the device. Observations made during the visualization study indicated that the capillary and boiling limits were being reached at extremely low values of input power. The work was performed in a collaborative effort between the Biomedical Nanotechnology Research Laboratory at the University of Toledo, the Center for Microelectronics and Sensors and MEMS at the University of Cincinnati and the Thermo-Mechanical Systems Branch of the Power and On-Board Propulsion Division at the John H. Glenn Research Center of the National Aeronautics and Space Administration in Cleveland, Ohio. Work on the project produced six publications, which presented various details on component fabrication, tests system construction and characterization and thermal modeling.

Implications of Pb-free microelectronics assembly in aerospace applications

NASA Technical Reports Server (NTRS)

Shapiro, A. A.; Bonner, J. K.; Ogunseitan, D.; Saphores, J. D.; Schoenung, J.

2003-01-01

The commercial microelectronics industry is rapidly moving to completely Pb-free assembly strategies within the next decade. This trend is being driven by existing and proposed legislation in Europe and in Japan. The microelectronics industry has become truly global, as indicated by major U .S. firms who already adopted Pb-free implementation programs. Among these forward-looking firms are AT&T, IBM, Motorola, HP and Intel to name a few.Following Moore's law, advances in microelectronics are happening very rapidly. In many cases, commercial industry is ahead of the aerospace sector in technology. Progress by commercial industry, along with cost, drives the use of Commercial Off-The-Shelf (COTS) parts for military and space applications. We can thus anticipate that the aerospace industry will, at some point, be forced to use Pb-free components and subsystems as part of their standard business practices. In this paper we attempt to provide a snapshot of the commercial industry trends and how they may impact electronics in the aerospace environment. In addition, we also look at different strategies for implementation. Finally we present data collected on a recent NASA project to focus on finding suitable alternatives to eutectic tin-lead solders and solder pastes. The world is moving toward implementation of environmentally friendly manufacturing techniques. The aerospace industry will be forced to deal with issues related with Pb free assembly, either by availability or legislation. This paper provides some insight into some of the tradeoffs that should be considered.

Selected aspects of microelectronics technology and applications: Numerically controlled machine tools. Technology trends series no. 2

NASA Astrophysics Data System (ADS)

Sigurdson, J.; Tagerud, J.

1986-05-01

A UNIDO publication about machine tools with automatic control discusses the following: (1) numerical control (NC) machine tool perspectives, definition of NC, flexible manufacturing systems, robots and their industrial application, research and development, and sensors; (2) experience in developing a capability in NC machine tools; (3) policy issues; (4) procedures for retrieval of relevant documentation from data bases. Diagrams, statistics, bibliography are included.

Radiation Testing, Characterization and Qualification Challenges for Modern Microelectronics and Photonics Devices and Technologies

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Cohn, Lewis M.

2008-01-01

At an earlier conference we discussed a selection of the challenges for radiation testing of modern semiconductor devices focusing on state-of-the-art CMOS technologies. In this presentation, we extend this discussion focusing on the following areas: (1) Device packaging, (2) Evolving physical single even upset mechanisms, (3) Device complexity, and (4) the goal of understanding the limitations and interpretation of radiation testing results.

Method for forming silicon on a glass substrate

DOEpatents

McCarthy, Anthony M.

1995-01-01

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics.

Method for forming silicon on a glass substrate

DOEpatents

McCarthy, A.M.

1995-03-07

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics. 15 figs.

Fabrication of 3D Carbon Microelectromechanical Systems (C-MEMS).

PubMed

Pramanick, Bidhan; Martinez-Chapa, Sergio O; Madou, Marc; Hwang, Hyundoo

2017-06-17

A wide range of carbon sources are available in nature, with a variety of micro-/nanostructure configurations. Here, a novel technique to fabricate long and hollow glassy carbon microfibers derived from human hairs is introduced. The long and hollow carbon structures were made by the pyrolysis of human hair at 900 °C in a N2 atmosphere. The morphology and chemical composition of natural and pyrolyzed human hairs were investigated using scanning electron microscopy (SEM) and electron-dispersive X-ray spectroscopy (EDX), respectively, to estimate the physical and chemical changes due to pyrolysis. Raman spectroscopy was used to confirm the glassy nature of the carbon microstructures. Pyrolyzed hair carbon was introduced to modify screen-printed carbon electrodes ; the modified electrodes were then applied to the electrochemical sensing of dopamine and ascorbic acid. Sensing performance of the modified sensors was improved as compared to the unmodified sensors. To obtain the desired carbon structure design, carbon micro-/nanoelectromechanical system (C-MEMS/C-NEMS) technology was developed. The most common C-MEMS/C-NEMS fabrication process consists of two steps: (i) the patterning of a carbon-rich base material, such as a photosensitive polymer, using photolithography; and (ii) carbonization through the pyrolysis of the patterned polymer in an oxygen-free environment. The C-MEMS/NEMS process has been widely used to develop microelectronic devices for various applications, including in micro-batteries, supercapacitors, glucose sensors, gas sensors, fuel cells, and triboelectric nanogenerators. Here, recent developments of a high-aspect ratio solid and hollow carbon microstructures with SU8 photoresists are discussed. The structural shrinkage during pyrolysis was investigated using confocal microscopy and SEM. Raman spectroscopy was used to confirm the crystallinity of the structure, and the atomic percentage of the elements present in the material before and after pyrolysis was measured using EDX.

Metal Oxide Thin Film Transistors on Paper Substrate: Fabrication, Characterization, and Printing Process

NASA Astrophysics Data System (ADS)

Choi, Nack-Bong

Flexible electronics is an emerging next-generation technology that offers many advantages such as light weight, durability, comfort, and flexibility. These unique features enable many new applications such as flexible display, flexible sensors, conformable electronics, and so forth. For decades, a variety of flexible substrates have been demonstrated for the application of flexible electronics. Most of them are plastic films and metal foils so far. For the fundamental device of flexible circuits, thin film transistors (TFTs) using poly silicon, amorphous silicon, metal oxide and organic semiconductor have been successfully demonstrated. Depending on application, low-cost and disposable flexible electronics will be required for convenience. Therefore it is important to study inexpensive substrates and to explore simple processes such as printing technology. In this thesis, paper is introduced as a new possible substrate for flexible electronics due to its low-cost and renewable property, and amorphous indium gallium zinc oxide (a-IGZO) TFTs are realized as the promising device on the paper substrate. The fabrication process and characterization of a-IGZO TFT on the paper substrate are discussed. a-IGZO TFTs using a polymer gate dielectric on the paper substrate demonstrate excellent performances with field effect mobility of ˜20 cm2 V-1 s-1, on/off current ratio of ˜106, and low leakage current, which show the enormous potential for flexible electronics application. In order to complement the n-channel a-IGZO TFTs and then enable complementary metal-oxide semiconductor (CMOS) circuit architectures, cuprous oxide is studied as a candidate material of p-channel oxide TFTs. In this thesis, a printing process is investigated as an alternative method for the fabrication of low-cost and disposable electronics. Among several printing methods, a modified offset roll printing that prints high resolution patterns is presented. A new method to fabricate a high resolution printing plate is investigated and the most favorable condition to transfer ink from a blanket to a cliche is studied. Consequently, a high resolution cliche is demonstrated and the printed patterns of 10mum width and 6mum line spacing are presented. In addition, the top gate a-IGZO TFTs with channel width/length of 12/6mum is successfully demonstrated by printing etch-resists. This work validates the compatibility of a-IGZO TFT on paper substrate for the disposable microelectronics application and presents the potential of low-cost and high resolution printing technology.

76 FR 58045 - Amended Certification Regarding Eligibility To Apply for Worker Adjustment Assistance; Applied...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-09-19

... Leased Workers From Adecco Employment Services, Aerotek, Inc., CDI IT Solutions, Inc. (CDI Corporation..., Aerotek, Inc., CDI IT Solutions, D&Z Microelectronics, Pentagon Technology, Proactive Business Solution... include the Unemployment Insurance (UI) wages for on-site leased workers from CDI IT Solutions is reported...

Highest integration in microelectronics: Development of digital ASICs for PARS3-LR

NASA Astrophysics Data System (ADS)

Scholler, Peter; Vonlutz, Rainer

Essential electronic system components by PARS3-LR, show high requirements in calculation power, power consumption and reliability, by immediately increasing integration thicknesses. These problems are solved by using integrated circuits, developed by LSI LOGIC, that uses the technical and economic advantages of this leading edge technology.

Secondary School Projects and the Microchip.

ERIC Educational Resources Information Center

Irvine, A. F.

This study of the applications of microelectronic devices in industry, together with an assessment of their value for use in schools, emphasizes the basic principles underlying the new technology and the practical ways in which these can contribute to associated work in computing and other disciplines in the school curriculum. Following a…

MEMS Using SOI Substrate

NASA Technical Reports Server (NTRS)

Tang, Tony K.

1999-01-01

At NASA, the focus for smaller, less costly missions has given impetus for the development of microspacecraft. MicroElectroMechanical System (MEMS) technology advances in the area of sensor, propulsion systems, and instruments, make the notion of a specialized microspacecraft feasible in the immediate future. Similar to the micro-electronics revolution,the emerging MEMS technology offers the integration of recent advances in micromachining and nanofabrication techniques with microelectronics in a mass-producible format,is viewed as the next step in device and instrument miniaturization. MEMS technology offers the potential of enabling or enhancing NASA missions in a variety of ways. This new technology allows the miniaturization of components and systems, where the primary benefit is a reduction in size, mass and power. MEMS technology also provides new capabilities and enhanced performance, where the most significant impact is in performance, regardless of system size. Finally,with the availability of mass-produced, miniature MEMS instrumentation comes the opportunity to rethink our fundamental measurement paradigms. It is now possible to expand our horizons from a single instrument perspective to one involving multi-node distributed systems. In the distributed systems and missions, a new system in which the functionality is enabled through a multiplicity of elements. Further in the future, the integration of electronics, photonics, and micromechanical functionalities into "instruments-on-a-chip" will provide the ultimate size, cost, function, and performance advantage. In this presentation, I will discuss recent development, requirement, and applications of various MEMS technologies and devices for space applications.

Hydrogen sensors based on catalytic metals

NASA Astrophysics Data System (ADS)

Beklemyshev, V. I.; Berezine, V.; Bykov, Victor A.; Kiselev, L.; Makhonin, I.; Pevgov, V.; Pustovoy, V.; Semynov, A.; Sencov, Y.; Shkuropat, I.; Shokin, A.

1999-11-01

On the base of microelectronical and micromechanical technology were designed and developed converters of hydrogen concentration to electrical signals. The devices of controlling concentration of hydrogen in the air were developed. These devices were applied for ensuring fire and explosion security of complex technological teste of missile oxygen-hydrogen engine, developed for cryogenic accelerations block. The sensor block of such device was installed directly on the armor-plate, to which was attached tested engine.

The MEMS Knudsen Compressor as a Vacuum Pump for Space Exploration Applications

NASA Technical Reports Server (NTRS)

Vargo, S. E.; Muntz, E. P.; Tang, W. C.

2000-01-01

Several lander, probe and rover missions currently under study at the Jet Propulsion Laboratory (JPL) and especially in the Microdevices Laboratory (MDL) Center for Space Microelectronics Technology, focus on utilizing microelectromechanical systems (MEMS) based instruments for science data gathering. These small instruments and NASA's commitment to "faster, better, cheaper" type missions has brought about the need for novel approaches to satisfying mission requirements. Existing in-situ instrument systems clearly lack novel and integrated methods for satisfying their vacuum needs. One attractive candidate for a MEMS vacuum pump is the Knudsen Compressor, which operates based on thermal transpiration. Thermal transpiration describes gas flows induced by temperature differences maintained across orifices, porous membranes or capillary tubes under rarefied conditions. This device has two overwhelmingly attractive features as a MEMS vacuum pump - no moving parts and no fluids. An initial estimate of a Knudsen Compressor's pumping power requirements for a surface atmospheric sampling task on Mars is less than 80 mW, significantly below than alternative pumps. Due to the relatively low energy use for this task and the applicability of the Knudsen Compressor to other applications, the development of a Knudsen Compressor utilizing MEMS fabrication techniques has been initiated. This paper discusses the initial fabrication of a single-stage MEMS Knudsen Compressor vacuum pump, provides performance criteria such as pumping speed, size, energy use and ultimate pressure and details vacuum pump applications in several MDL related in-situ instruments.

Scalable fabrication of SnO2 thin films sensitized with CuO islands for enhanced H2S gas sensing performance

NASA Astrophysics Data System (ADS)

Van Toan, Nguyen; Chien, Nguyen Viet; Van Duy, Nguyen; Vuong, Dang Duc; Lam, Nguyen Huu; Hoa, Nguyen Duc; Van Hieu, Nguyen; Chien, Nguyen Duc

2015-01-01

The detection of H2S, an important gaseous molecule that has been recently marked as a highly toxic environmental pollutant, has attracted increasing attention. We fabricate a wafer-scale SnO2 thin film sensitized with CuO islands using microelectronic technology for the improved detection of the highly toxic H2S gas. The SnO2-CuO island sensor exhibits significantly enhanced H2S gas response and reduced operating temperature. The thickness of CuO islands strongly influences H2S sensing characteristics, and the highest H2S gas response is observed with 20 nm-thick CuO islands. The response value (Ra/Rg) of the SnO2-CuO island sensor to 5 ppm H2S is as high as 128 at 200 °C and increases nearly 55-fold compared with that of the bare SnO2 thin film sensor. Meanwhile, the response of the SnO2-CuO island sensor to H2 (250 ppm), NH3 (250 ppm), CO (250 ppm), and LPG (1000 ppm) are low (1.3-2.5). The enhanced gas response and selectivity of the SnO2-CuO island sensor to H2S gas is explained by the sensitizing effect of CuO islands and the extension of electron depletion regions because of the formation of p-n junctions.

Nano-Nucleation Characteristic of Cu-Ag Alloy Directly Electrodeposited on W Diffusion Barrier for Microelectronic Device Interconnect.

PubMed

Kim, Kang O; Kim, Sunjung

2016-05-01

Cu-Ag alloy interconnect is promising for ultra-large-scale integration (ULSI) microelectronic system of which device dimension keeps shrinking. In this study, seedless electrodeposition of Cu-Ag alloy directly on W diffusion barrier as interconnect technology is presented in respect of nano-nucleation control. Chemical equilibrium state of electrolyte was fundamentally investigated according to the pH of electrolyte because direct nano-nucleation of Cu-Ag alloy on W surface is challenging. Chelation behavior of Cu2+ and Ag+ ions with citrate (Cit) and ammonia ligands was dependent on the pH of electrolyte. The amount and kind of Cu- and Ag-based complexes determine the deposition rate, size, elemental composition, and surface morphology of Cu-Ag alloy nano-nuclei formed on W surface.

Fabrication of polyimide based microfluidic channels for biosensor devices

NASA Astrophysics Data System (ADS)

Zulfiqar, Azeem; Pfreundt, Andrea; Svendsen, Winnie Edith; Dimaki, Maria

2015-03-01

The ever-increasing complexity of the fabrication process of Point-of-care (POC) devices, due to high demand of functional versatility, compact size and ease-of-use, emphasizes the need of multifunctional materials that can be used to simplify this process. Polymers, currently in use for the fabrication of the often needed microfluidic channels, have limitations in terms of their physicochemical properties. Therefore, the use of a multipurpose biocompatible material with better resistance to the chemical, thermal and electrical environment, along with capability of forming closed channel microfluidics is inevitable. This paper demonstrates a novel technique of fabricating microfluidic devices using polyimide (PI) which fulfills the aforementioned properties criteria. A fabrication process to pattern microfluidic channels, using partially cured PI, has been developed by using a dry etching method. The etching parameters are optimized and compared to those used for fully cured PI. Moreover, the formation of closed microfluidic channel on wafer level by bonding two partially cured PI layers or a partially cured PI to glass with high bond strength has been demonstrated. The reproducibility in uniformity of PI is also compared to the most commonly used SU8 polymer, which is a near UV sensitive epoxy resin. The potential applications of PI processing are POC and biosensor devices integrated with microelectronics.

Chemical-free n-type and p-type multilayer-graphene transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dissanayake, D. M. N. M., E-mail: nandithad@voxtel-inc.com; Eisaman, M. D.; Department of Electrical and Computer Engineering, Stony Brook University, Stony Brook, New York 11794

A single-step doping method to fabricate n- and p-type multilayer graphene (MG) top-gate field effect transistors (GFETs) is demonstrated. The transistors are fabricated on soda-lime glass substrates, with the n-type doping of MG caused by the sodium in the substrate without the addition of external chemicals. Placing a hydrogen silsesquioxane (HSQ) barrier layer between the MG and the substrate blocks the n-doping, resulting in p-type doping of the MG above regions patterned with HSQ. The HSQ is deposited in a single fabrication step using electron beam lithography, allowing the patterning of arbitrary sub-micron spatial patterns of n- and p-type doping.more » When a MG channel is deposited partially on the barrier and partially on the glass substrate, a p-type and n-type doping profile is created, which is used for fabricating complementary transistors pairs. Unlike chemically doped GFETs in which the external dopants are typically introduced from the top, these substrate doped GFETs allow for a top gate which gives a stronger electrostatic coupling to the channel, reducing the operating gate bias. Overall, this method enables scalable fabrication of n- and p-type complementary top-gated GFETs with high spatial resolution for graphene microelectronic applications.« less

Retinal Implants for Blind Patients

NASA Astrophysics Data System (ADS)

Rothermel, Albrecht

Recently, very promising results have been obtained in clinical trials with eye-prostheses for the blind. There is a chance that advances in surgical techniques, microelectronics design, and material science may lead to the first really useful applications of retinal implants in the near future. This chapter will focus on the actual status of subretinal surgery and implant technologies. Opportunities and limitations of the different technologies will be discussed in terms of patients benefit and technological challenges. Finally, a vision on how the devices may work and look like in the future will be given.

Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

NASA Technical Reports Server (NTRS)

Buehler, M. G.; Allen, R. A.; Blaes, B. R.; Hicks, K. A.; Jennings, G. A.; Lin, Y.-S.; Pina, C. A.; Sayah, H. R.; Zamani, N.

1989-01-01

Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis.

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

PubMed

Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki

2006-05-18

Compact high-efficiency ultraviolet solid-state light sources--such as light-emitting diodes (LEDs) and laser diodes--are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond and III-V nitride semiconductors (GaN, AlGaN and AlN; refs 3-10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.

Nanotechnologies in Cuba: Popularization and Training

NASA Astrophysics Data System (ADS)

Rodríguez Castellanos, Carlos

In Cuba, as in other countries, activities in the field of nanotechnology emerged from the converging development of research in materials physics and chemistry, microelectronics, supramolecular physics, microbiology and molecular biology. During the 1990s, theoretical and experimental work on semiconductor nanostructures gained in importance. Cuban physicists organized the Red CYTED (Network CYTED) to "study fabrication and characterization of semiconductor nanostructures for micro and optoelectronics" which functioned between 1998 and 2003 with the participation of eight Spanish-American countries. The network organized various courses and scientific meetings, edited a book and supported the scientific collaboration among the participant institutions.

Low-damage high-throughput grazing-angle sputter deposition on graphene

NASA Astrophysics Data System (ADS)

Chen, C.-T.; Casu, E. A.; Gajek, M.; Raoux, S.

2013-07-01

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

NASA Innovation Builds Better Nanotubes

NASA Technical Reports Server (NTRS)

2008-01-01

Nanotailor Inc., based in Austin, Texas, licensed Goddard Space Flight Center's unique single-walled carbon nanotube (SWCNT) fabrication process with plans to make high-quality, low-cost SWCNTs available commercially. Carbon nanotubes are being used in a wide variety of applications, and NASA's improved production method will increase their applicability in medicine, microelectronics, advanced materials, and molecular containment. Nanotailor built and tested a prototype based on Goddard's process, and is using this technique to lower the cost and improve the integrity of nanotubes, offering a better product for use in biomaterials, advanced materials, space exploration, highway and building construction, and many other applications.

Micro-Electronics, Robotics and Jobs. Information Computer Communication Policy Series No. 7.

ERIC Educational Resources Information Center

Organisation for Economic Cooperation and Development, Paris (France).

This monograph contains selected papers presented at the Second Special Session on Information Technologies, Productivity and Labour Market Implications, which took place at the Organisation for Economic Cooperation and Development on October 19-21, 1981. An introductory note summarizes significant points from the meeting. Part 1 contains a report…

Education and Training in Japan in the Cybernetic Age. Program Report No. 85-B2.

ERIC Educational Resources Information Center

Muta, Hiromitsu

The introduction of computers and other microelectronic equipment throughout the Japanese economy has not affected employment negatively, owing to economic growth and the adaptability of the workers and business organizations affected. Because rapid advances in technology are making many specialized skills and areas of knowledge obsolete, it is…

Electronic Records Management and Archives in International Organizations: A RAMP Study with Guidelines.

ERIC Educational Resources Information Center

Dollar, Charles M.

This study is a review of trends in information-handling technology and significant developments which are changing or will change the general environment within which archivists and records managers in international organizations will have to work. Trends in microelectronics, electronic storage, software, data transmission, computer architecture,…

State-of-the-art methods for testing materials outdoors

Treesearch

R. Sam Williams

2004-01-01

In recent years, computers, sensors, microelectronics, and communication technologies have made it possible to automate the way materials are tested in the field. It is now possible to purchase monitoring equipment to measure weather and materials properties. The measurement of materials response often requires innovative approaches and added expense, but the...

A Brief History of ... Semiconductors

ERIC Educational Resources Information Center

Jenkins, Tudor

2005-01-01

The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

A novel three-jet microreactor for localized metal-organic chemical vapour deposition of gallium arsenide: design and simulation

NASA Astrophysics Data System (ADS)

Konakov, S. A.; Krzhizhanovskaya, V. V.

2016-08-01

We present a novel three-jet microreactor design for localized deposition of gallium arsenide (GaAs) by low-pressure Metal-Organic Chemical Vapour Deposition (MOCVD) for semiconductor devices, microelectronics and solar cells. Our approach is advantageous compared to the standard lithography and etching technology, since it preserves the nanostructure of the deposited material, it is less time-consuming and less expensive. We designed two versions of reactor geometry with a 10-micron central microchannel for precursor supply and with two side jets of a dilutant to control the deposition area. To aid future experiments, we performed computational modeling of a simplified-geometry (twodimensional axisymmetric) microreactor, based on Navier-Stokes equations for a laminar flow of chemically reacting gas mixture of Ga(CH3)3-AsH3-H2. Simulation results show that we can achieve a high-rate deposition (over 0.3 μm/min) on a small area (less than 30 μm diameter). This technology can be used in material production for microelectronics, optoelectronics, photovoltaics, solar cells, etc.

Cytotoxicity and mitogenicity assays with real-time and label-free monitoring of human granulosa cells with an impedance-based signal processing technology intergrating micro-electronics and cell biology.

PubMed

Oktem, Ozgur; Bildik, Gamze; Senbabaoglu, Filiz; Lack, Nathan A; Akin, Nazli; Yakar, Feridun; Urman, Defne; Guzel, Yilmaz; Balaban, Basak; Iwase, Akira; Urman, Bulent

2016-04-01

A recently developed technology (xCelligence) integrating micro-electronics and cell biology allows real-time, uninterrupted and quantitative analysis of cell proliferation, viability and cytotoxicity by measuring the electrical impedance of the cell population in the wells without using any labeling agent. In this study we investigated if this system is a suitable model to analyze the effects of mitogenic (FSH) and cytotoxic (chemotherapy) agents with different toxicity profiles on human granulosa cells in comparison to conventional methods of assessing cell viability, DNA damage, apoptosis and steroidogenesis. The system generated the real-time growth curves of the cells, and determined their doubling times, mean cell indices and generated dose-response curves after exposure to cytotoxic and mitogenic stimuli. It accurately predicted the gonadotoxicity of the drugs and distinguished less toxic agents (5-FU and paclitaxel) from more toxic ones (cisplatin and cyclophosphamide). This platform can be a useful tool for specific end-point assays in reproductive toxicology. Copyright © 2015 Elsevier Inc. All rights reserved.

Practical Applications of Cosmic Ray Science: Spacecraft, Aircraft, Ground-Based Computation and Control Systems, and Human Health and Safety

NASA Technical Reports Server (NTRS)

Atwell, William; Koontz, Steve; Normand, Eugene

2012-01-01

Three twentieth century technological developments, 1) high altitude commercial and military aircraft; 2) manned and unmanned spacecraft; and 3) increasingly complex and sensitive solid state micro-electronics systems, have driven an ongoing evolution of basic cosmic ray science into a set of practical engineering tools needed to design, test, and verify the safety and reliability of modern complex technological systems. The effects of primary cosmic ray particles and secondary particle showers produced by nuclear reactions with the atmosphere, can determine the design and verification processes (as well as the total dollar cost) for manned and unmanned spacecraft avionics systems. Similar considerations apply to commercial and military aircraft operating at high latitudes and altitudes near the atmospheric Pfotzer maximum. Even ground based computational and controls systems can be negatively affected by secondary particle showers at the Earth s surface, especially if the net target area of the sensitive electronic system components is large. Finally, accumulation of both primary cosmic ray and secondary cosmic ray induced particle shower radiation dose is an important health and safety consideration for commercial or military air crews operating at high altitude/latitude and is also one of the most important factors presently limiting manned space flight operations beyond low-Earth orbit (LEO). In this paper we review the discovery of cosmic ray effects on the performance and reliability of microelectronic systems as well as human health and the development of the engineering and health science tools used to evaluate and mitigate cosmic ray effects in ground-based atmospheric flight, and space flight environments. Ground test methods applied to microelectronic components and systems are used in combinations with radiation transport and reaction codes to predict the performance of microelectronic systems in their operating environments. Similar radiation transport codes are used to evaluate possible human health effects of cosmic ray exposure, however, the health effects are based on worst-case analysis and extrapolation of a very limited human exposure data base combined with some limited experimental animal data. Finally, the limitations on human space operations beyond low-Earth orbit imposed by long term exposure to galactic cosmic rays are discussed.

UV beam shaper alignment sensitivity: grayscale versus binary designs

NASA Astrophysics Data System (ADS)

Lizotte, Todd E.

2008-08-01

What defines a good flat top beam shaper? What is more important; an ideal flat top profile or ease of alignment and stability? These are the questions designers and fabricators can not easily define, since they are a function of experience. Anyone can generate a theoretical beam shaper design and model it until it is clear that on paper the design looks good and meets the general needs of the end customer. However, the method of fabrication can add a twist that is not fully understood by either party until the beam shaper is actually tested for the first time in a system and also produced in high volume. This paper provides some insight into how grayscale and binary fabrication methods can produce the same style of beam shaper, with similar beam shaping performance; however provide a result wherein each fabricated design has separate degrees of sensitivity for alignment and stability. The paper will explain the design and fabrication approach for the two units and present alignment and testing data to provide a contrast comparison. Further data will show that over twenty sets of each fabricated design there is a consistency to the sensitivity issue. An understanding of this phenomenon is essential when considering the use of beam shapers on production equipment that is dedicated to producing micron-precision features within high value microelectronic and consumer products. We will present our findings and explore potential explanations and solutions.

Wireless health monitoring of cracks in structures with MEMS-IDT sensors

NASA Astrophysics Data System (ADS)

Kim, Jae-Sung; Vinoy, K. J.; Varadan, Vijay K.

2002-07-01

The integration of MEMS, IDTs and required microelectronics and conformal antennas to realize programmable, robust and low cost passive microsensors suitable for many military structures and systems including aircraft, missiles and munitions is presented in this paper. The technology is currently being applied to the structural health monitoring of accelerometers, gyroscopes and vibration monitoring devices with signal processing electronics to provide real- time indicators of incipient failure of aircraft components with a known history of catastrophic failure due to fracture. Recently a combination of the need for safety in the air and the desire to control costs is encouraging the use of in-flight monitoring of aircraft components and systems using light-weight, wireless and cost effective microsensors and MEMS. An in-situ Aircraft structural health monitoring system, with sensors embedded in the composite structure or surface-mounted on the structure, would permit the timely detection of damage in aircraft. Micromachining offers the potential for fabricating a range of microsensors and MEMS for structural applications including load, vibration and acoustics characteristics and monitoring. Such microsensors are extremely small; they can be embedded into structural materials, can be mass-produced and are therefore potentially cheap. Additionally a range of sensor types can be integrated onto a single chip with built-in electronics and ASIC, providing a low power microsystem. The smart sensors are being developed using the standard microelectronics and micromachining in conjunction with novel Penn State smart electronics or wireless communication systems suitable for condition monitoring of aircraft structures in-flight. A hybrid accelerometer and gyroscope in a single chip suitable for inertial navigation system and other microsensors for health monitoring and condition-based maintenance of structures, drag sensing and control of aircraft, strain and deflection of structures and systems, ice sensing on aircraft, remote temperature and humidity measurement of propellant in munitions, chemical sensing, etc. are discussed.

Wireless microsensors for health monitoring of aircraft structures

NASA Astrophysics Data System (ADS)

Varadan, Vijay K.

2003-01-01

The integration of MEMS, IDTs (interdigital transducers) and required microelectronics and conformal antennas to realize programmable, robust and low cost passive microsensors suitable for many military structures and systems including aircraft, missiles and munitions is presented in this paper. The technology is currently being applied to the structural health monitoring of critical aircraft components. The approach integrates acoustic emission, strain gauges, MEMS accelerometers, gyroscopes and vibration monitoring devices with signal processing electronics to provide real-time indicators of incipient failure of aircraft components with a known history of catastrophic failure due to fracture. Recently a combination of the need for safety in the air and the desire to control costs is encouraging the use of in-flight monitoring of aircraft components and systems using light-weight, wireless and cost effective microsensors and MEMS. An in-situ Aircraft structural health monitoring (ASHM) system, with sensors embedded in the composite structure or surface-mounted on the structure, would permit the timely detection of damage in aircraft. Micromachining offers the potential for fabricating a range of microsensors and MEMS for structural applications including load, vibration and acoustics characterization and monitoring. Such microsensors are extremely small; they can be embedded into structural materials, can be mass-produced and are therefore potentially cheap. Additionally a range of sensor types can be integrated onto a single chip with built-in electronics and ASIC (Application Specific Integrated Circuit), providing a low power Microsystems. The smart sensors are being developed using the standard microelectronics and micromachining in conjunction with novel Penn State smart electronics or wireless communication systems suitable for condition monitoring of aircraft structures in-flight. A hybrid accelerometer and gyroscope in a single chip suitable for inertial navigation system and other microsensors for health monitoring and condition-based maintenance of structures, drag sensing and control of aircraft, strain and deflection of structures and systems, ice sensing on aircraft, remote temperature and humidity measurement of propellant in munitions, chemical sensing, etc. are discussed.

Digital diffractive optics: Have diffractive optics entered mainstream industry yet?

NASA Astrophysics Data System (ADS)

Kress, Bernard; Hejmadi, Vic

2010-05-01

When a new technology is integrated into industry commodity products and consumer electronic devices, and sold worldwide in retail stores, it is usually understood that this technology has then entered the realm of mainstream technology and therefore mainstream industry. Such a leap however does not come cheap, as it has a double edge sword effect: first it becomes democratized and thus massively developed by numerous companies for various applications, but also it becomes a commodity, and thus gets under tremendous pressure to cut down its production and integration costs while not sacrificing to performance. We will show, based on numerous examples extracted from recent industry history, that the field of Diffractive Optics is about to undergo such a major transformation. Such a move has many impacts on all facets of digital diffractive optics technology, from the optical design houses to the micro-optics foundries (for both mastering and volume replication), to the final product integrators or contract manufacturers. The main causes of such a transformation are, as they have been for many other technologies in industry, successive technological bubbles which have carried and lifted up diffractive optics technology within the last decades. These various technological bubbles have been triggered either by real industry needs or by virtual investment hype. Both of these causes will be discussed in the paper. The adjective ""digital"" in "digital diffractive optics" does not refer only, as it is done in digital electronics, to the digital functionality of the element (digital signal processing), but rather to the digital way they are designed (by a digital computer) and fabricated (as wafer level optics using digital masking techniques). However, we can still trace a very strong similarity between the emergence of micro-electronics from analog electronics half a century ago, and the emergence of digital optics from conventional optics today.

An optical relay approach to very low cost hybrid polymer-complementary metal-oxide semiconductor electrophoresis instrumentation.

PubMed

Hall, Gordon H; Sloan, David L; Ma, Tianchi; Couse, Madeline H; Martel, Stephane; Elliott, Duncan G; Glerum, D Moira; Backhouse, Christopher J

2014-07-04

Electrophoresis is an integral part of many molecular diagnostics protocols and an inexpensive implementation would greatly facilitate point-of-care (POC) applications. However, the high instrumentation cost presents a substantial barrier, much of it associated with fluorescence detection. The cost of such systems could be substantially reduced by placing the fluidic channel and photodiode directly above the detector in order to collect a larger portion of the fluorescent light. In future, this could be achieved through the integration and monolithic fabrication of photoresist microchannels on complementary metal-oxide semiconductor microelectronics (CMOS). However, the development of such a device is expensive due to high non-recurring engineering costs. To facilitate that development, we present a system that utilises an optical relay to integrate low-cost polymeric microfluidics with a CMOS chip that provides a photodiode, analog-digital conversion and a standard serial communication interface. This system embodies an intermediate level of microelectronic integration, and significantly decreases development costs. With a limit of detection of 1.3±0.4nM of fluorescently end-labeled deoxyribonucleic acid (DNA), it is suitable for diagnostic applications. Copyright © 2014 Elsevier B.V. All rights reserved.

Direct laser-patterned micro-supercapacitors from paintable MoS2 films.

PubMed

Cao, Liujun; Yang, Shubin; Gao, Wei; Liu, Zheng; Gong, Yongji; Ma, Lulu; Shi, Gang; Lei, Sidong; Zhang, Yunhuai; Zhang, Shengtao; Vajtai, Robert; Ajayan, Pulickel M

2013-09-09

Micrometer-sized electrochemical capacitors have recently attracted attention due to their possible applications in micro-electronic devices. Here, a new approach to large-scale fabrication of high-capacitance, two-dimensional MoS2 film-based micro-supercapacitors is demonstrated via simple and low-cost spray painting of MoS2 nanosheets on Si/SiO2 chip and subsequent laser patterning. The obtained micro-supercapacitors are well defined by ten interdigitated electrodes (five electrodes per polarity) with 4.5 mm length, 820 μm wide for each electrode, 200 μm spacing between two electrodes and the thickness of electrode is ∼0.45 μm. The optimum MoS2 -based micro-supercapacitor exhibits excellent electrochemical performance for energy storage with aqueous electrolytes, with a high area capacitance of 8 mF cm(-2) (volumetric capacitance of 178 F cm(-3) ) and excellent cyclic performance, superior to reported graphene-based micro-supercapacitors. This strategy could provide a good opportunity to develop various micro-/nanosized energy storage devices to satisfy the requirements of portable, flexible, and transparent micro-electronic devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Direct selective growth of ZnO nanowire arrays from inkjet-printed zinc acetate precursor on a heated substrate

PubMed Central

2013-01-01

Inkjet printing of functional materials has drawn tremendous interest as an alternative to the conventional photolithography-based microelectronics fabrication process development. We introduce direct selective nanowire array growth by inkjet printing of Zn acetate precursor ink patterning and subsequent hydrothermal ZnO local growth without nozzle clogging problem which frequently happens in nanoparticle inkjet printing. The proposed process can directly grow ZnO nanowires in any arbitrary patterned shape, and it is basically very fast, low cost, environmentally benign, and low temperature. Therefore, Zn acetate precursor inkjet printing-based direct nanowire local growth is expected to give extremely high flexibility in nanomaterial patterning for high-performance electronics fabrication especially at the development stage. As a proof of concept of the proposed method, ZnO nanowire network-based field effect transistors and ultraviolet photo-detectors were demonstrated by direct patterned grown ZnO nanowires as active layer. PMID:24252130

An electrically tunable plenoptic camera using a liquid crystal microlens array.

PubMed

Lei, Yu; Tong, Qing; Zhang, Xinyu; Sang, Hongshi; Ji, An; Xie, Changsheng

2015-05-01

Plenoptic cameras generally employ a microlens array positioned between the main lens and the image sensor to capture the three-dimensional target radiation in the visible range. Because the focal length of common refractive or diffractive microlenses is fixed, the depth of field (DOF) is limited so as to restrict their imaging capability. In this paper, we propose a new plenoptic camera using a liquid crystal microlens array (LCMLA) with electrically tunable focal length. The developed LCMLA is fabricated by traditional photolithography and standard microelectronic techniques, and then, its focusing performance is experimentally presented. The fabricated LCMLA is directly integrated with an image sensor to construct a prototyped LCMLA-based plenoptic camera for acquiring raw radiation of targets. Our experiments demonstrate that the focused region of the LCMLA-based plenoptic camera can be shifted efficiently through electrically tuning the LCMLA used, which is equivalent to the extension of the DOF.

An electrically tunable plenoptic camera using a liquid crystal microlens array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lei, Yu; School of Automation, Huazhong University of Science and Technology, Wuhan 430074; Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074

2015-05-15

Plenoptic cameras generally employ a microlens array positioned between the main lens and the image sensor to capture the three-dimensional target radiation in the visible range. Because the focal length of common refractive or diffractive microlenses is fixed, the depth of field (DOF) is limited so as to restrict their imaging capability. In this paper, we propose a new plenoptic camera using a liquid crystal microlens array (LCMLA) with electrically tunable focal length. The developed LCMLA is fabricated by traditional photolithography and standard microelectronic techniques, and then, its focusing performance is experimentally presented. The fabricated LCMLA is directly integrated withmore » an image sensor to construct a prototyped LCMLA-based plenoptic camera for acquiring raw radiation of targets. Our experiments demonstrate that the focused region of the LCMLA-based plenoptic camera can be shifted efficiently through electrically tuning the LCMLA used, which is equivalent to the extension of the DOF.« less

An electrically tunable plenoptic camera using a liquid crystal microlens array

NASA Astrophysics Data System (ADS)

Lei, Yu; Tong, Qing; Zhang, Xinyu; Sang, Hongshi; Ji, An; Xie, Changsheng

2015-05-01

Plenoptic cameras generally employ a microlens array positioned between the main lens and the image sensor to capture the three-dimensional target radiation in the visible range. Because the focal length of common refractive or diffractive microlenses is fixed, the depth of field (DOF) is limited so as to restrict their imaging capability. In this paper, we propose a new plenoptic camera using a liquid crystal microlens array (LCMLA) with electrically tunable focal length. The developed LCMLA is fabricated by traditional photolithography and standard microelectronic techniques, and then, its focusing performance is experimentally presented. The fabricated LCMLA is directly integrated with an image sensor to construct a prototyped LCMLA-based plenoptic camera for acquiring raw radiation of targets. Our experiments demonstrate that the focused region of the LCMLA-based plenoptic camera can be shifted efficiently through electrically tuning the LCMLA used, which is equivalent to the extension of the DOF.

Design and analysis of a high Q MEMS passive RF filter

NASA Astrophysics Data System (ADS)

Rathee, Vishal; Pande, Rajesh

2016-04-01

Over the past few years, significant growth has been observed in using MEMS based passive components in the RF microelectronics domain, especially in transceiver system. This is due to some excellent properties of the MEMS devices like low loss, low cost and excellent isolation. This paper presents a design of high performance MEMS passive band pass filter, consisting of L and C with improved quality factor and insertion loss less than the reported filters. In this paper we have presented a design of 2nd order band pass filter with 2.4GHz centre frequency and 83MHz bandwidth for Bluetooth application. The simulation results showed improved Q-factor of 34 and Insertion loss of 1.7dB to 1.9dB. The simulation results needs to be validated by fabricating the device, fabrication flow of which is also presented in the paper.

Smart substrates: Making multi-chip modules smarter

NASA Astrophysics Data System (ADS)

Wunsch, T. F.; Treece, R. K.

1995-05-01

A novel multi-chip module (MCM) design and manufacturing methodology which utilizes active CMOS circuits in what is normally a passive substrate realizes the 'smart substrate' for use in highly testable, high reliability MCMS. The active devices are used to test the bare substrate, diagnose assembly errors or integrated circuit (IC) failures that require rework, and improve the testability of the final MCM assembly. A static random access memory (SRAM) MCM has been designed and fabricated in Sandia Microelectronics Development Laboratory in order to demonstrate the technical feasibility of this concept and to examine design and manufacturing issues which will ultimately determine the economic viability of this approach. The smart substrate memory MCM represents a first in MCM packaging. At the time the first modules were fabricated, no other company or MCM vendor had incorporated active devices in the substrate to improve manufacturability and testability, and thereby improve MCM reliability and reduce cost.

Field-programmable lab-on-a-chip based on microelectrode dot array architecture.

PubMed

Wang, Gary; Teng, Daniel; Lai, Yi-Tse; Lu, Yi-Wen; Ho, Yingchieh; Lee, Chen-Yi

2014-09-01

The fundamentals of electrowetting-on-dielectric (EWOD) digital microfluidics are very strong: advantageous capability in the manipulation of fluids, small test volumes, precise dynamic control and detection, and microscale systems. These advantages are very important for future biochip developments, but the development of EWOD microfluidics has been hindered by the absence of: integrated detector technology, standard commercial components, on-chip sample preparation, standard manufacturing technology and end-to-end system integration. A field-programmable lab-on-a-chip (FPLOC) system based on microelectrode dot array (MEDA) architecture is presented in this research. The MEDA architecture proposes a standard EWOD microfluidic component called 'microelectrode cell', which can be dynamically configured into microfluidic components to perform microfluidic operations of the biochip. A proof-of-concept prototype FPLOC, containing a 30 × 30 MEDA, was developed by using generic integrated circuits computer aided design tools, and it was manufactured with standard low-voltage complementary metal-oxide-semiconductor technology, which allows smooth on-chip integration of microfluidics and microelectronics. By integrating 900 droplet detection circuits into microelectrode cells, the FPLOC has achieved large-scale integration of microfluidics and microelectronics. Compared to the full-custom and bottom-up design methods, the FPLOC provides hierarchical top-down design approach, field-programmability and dynamic manipulations of droplets for advanced microfluidic operations.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth

Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturingmore » of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.« less

Broadband image sensor array based on graphene-CMOS integration

NASA Astrophysics Data System (ADS)

Goossens, Stijn; Navickaite, Gabriele; Monasterio, Carles; Gupta, Shuchi; Piqueras, Juan José; Pérez, Raúl; Burwell, Gregory; Nikitskiy, Ivan; Lasanta, Tania; Galán, Teresa; Puma, Eric; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Konstantatos, Gerasimos; Koppens, Frank

2017-06-01

Integrated circuits based on complementary metal-oxide-semiconductors (CMOS) are at the heart of the technological revolution of the past 40 years, enabling compact and low-cost microelectronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible-light cameras has been impeded by the difficulty to combine semiconductors other than silicon with CMOS. Here, we report the monolithic integration of a CMOS integrated circuit with graphene, operating as a high-mobility phototransistor. We demonstrate a high-resolution, broadband image sensor and operate it as a digital camera that is sensitive to ultraviolet, visible and infrared light (300-2,000 nm). The demonstrated graphene-CMOS integration is pivotal for incorporating 2D materials into the next-generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and terahertz frequencies.

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

PubMed Central

Makey, Ghaith; Elahi, Parviz; Çolakoğlu, Tahir; Ergeçen, Emre; Yavuz, Özgün; Hübner, René; Borra, Mona Zolfaghari; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ömer

2017-01-01

Silicon is an excellent material for microelectronics and integrated photonics1–3 with untapped potential for mid-IR optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realised with techniques like reactive ion etching. Embedded optical elements, like in glass7, electronic devices, and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1 µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has a different optical index than unmodified parts, which enables numerous photonic devices. Optionally, these parts are chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface, i.e., “in-chip” microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaic applications and photonic devices that match or surpass the corresponding state-of-the-art device performances. PMID:28983323

MIRAGE: developments in IRSP systems, RIIC design, emitter fabrication, and performance

NASA Astrophysics Data System (ADS)

Bryant, Paul; Oleson, Jim; James, Jay; McHugh, Steve; Lannon, John; Vellenga, David; Goodwin, Scott; Huffman, Alan; Solomon, Steve; Goldsmith, George C., II

2005-05-01

SBIR's family of MIRAGE infrared scene projection systems is undergoing significant growth and expansion. The first two lots of production IR emitters have completed fabrication at Microelectronics Center of North Carolina/Research and Development Institute (MCNC-RDI), and the next round(s) of emitter production has begun. These latest emitter arrays support programs such as Large Format Resistive Array (LFRA), Optimized Array for Space-based Infrared Simulation (OASIS), MIRAGE 1.5, and MIRAGE II. We present the latest performance data on emitters fabricated at MCNC-RDI, plus integrated system performance on recently completed IRSP systems. Teamed with FLIR Systems/Indigo Operations, SBIR and the Tri-Services IRSP Working Group have completed development of the CMOS Read-In Integrated Circuit (RIIC) portion of the Wide Format Resistive Array (WFRA) program-to extend LFRA performance to a 768 x 1536 "wide screen" projection configuration. WFRA RIIC architecture and performance is presented. Finally, we summarize development of the LFRA Digital Emitter Engine (DEE) and OASIS cryogenic package assemblies, the next-generation Command & Control Electronics (C&CE).

Fabrication of 3D gold/polymer conductive microstructures via direct laser writing (Conference Presentation)

NASA Astrophysics Data System (ADS)

Blasco, Eva; Müller, Jonathan B.; Müller, Patrick; Fischer, Andreas C.; Barner-Kowollik, Christopher; Wegener, Martin

2017-02-01

During the last years there has been significant interest in the fabrication of conductive three-dimensional (3D) structures on the micrometer scale due to their potential applications in microelectronics or emerging fields such as flexible electronics, nanophotonics, and plasmonics. Two-photon direct laser writing (DLW) has been proposed as a potential tool for the fabrication of 3D microstructures in various contexts. The majority of these two-photon processes involve the preparation of insoluble polymeric networks using photopolymerizable photoresins based on acrylate or epoxy groups. Nevertheless, the preparation of conductive 3D microstructures is still very challenging. The aim of the current work has been the preparation of conductive 3D microstructures via DLW by employing a newly developed photoresist. The photoresist consists of acrylate-functionalized poly(ethylene glycol) derivates and HAuCl4 as the gold precursor. By varying the gold content of the photoresist, different structures have been prepared and characterized by SEM and XPS. Conductivity of individual wires between prefabricated macroelectrodes has been measured too. Subsequently, the material has been employed to demonstrate the possibility of true 3D microscale connections.

Fabricating PFPE Membranes for Capillary Electrophoresis

NASA Technical Reports Server (NTRS)

Lee, Michael C.; Willis, Peter A.; Greer, Frank; Rolland, Jason

2009-01-01

A process has been developed for fabricating perfluoropolyether (PFPE) membranes that contain microscopic holes of precise sizes at precise locations. The membranes are to be incorporated into laboratory-on-a-chip microfluidic devices to be used in performing capillary electrophoresis. The present process is a modified version of part of the process, described in the immediately preceding article, that includes a step in which a liquid PFPE layer is cured into solid (membrane) form by use of ultraviolet light. In the present process, one exploits the fact that by masking some locations to prevent exposure to ultraviolet light, one can prevent curing of the PFPE in those locations. The uncured PFPE can be washed away from those locations in the subsequent release and cleaning steps. Thus, holes are formed in the membrane in those locations. The most straightforward way to implement the modification is to use, during the ultraviolet-curing step, an ultraviolet photomask similar to the photomasks used in fabricating microelectronic devices. In lieu of such a photomask, one could use a mask made of any patternable ultraviolet-absorbing material (for example, an ink or a photoresist).

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

NASA Astrophysics Data System (ADS)

Tokel, Onur; Turnalı, Ahmet; Makey, Ghaith; Elahi, Parviz; ćolakoǧlu, Tahir; Ergeçen, Emre; Yavuz, Ã.-zgün; Hübner, René; Zolfaghari Borra, Mona; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ã.-mer

2017-10-01

Silicon is an excellent material for microelectronics and integrated photonics1-3, with untapped potential for mid-infrared optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow the fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realized with techniques like reactive ion etching. Embedded optical elements7, electronic devices and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1-µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has an optical index different to that in unmodified parts, enabling the creation of numerous photonic devices. Optionally, these parts can be chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface—that is, `in-chip'—microstructures for microfluidic cooling of chips, vias, micro-electro-mechanical systems, photovoltaic applications and photonic devices that match or surpass corresponding state-of-the-art device performances.

Highly organised and dense vertical silicon nanowire arrays grown in porous alumina template on <100> silicon wafers

PubMed Central

2013-01-01

In this work, nanoimprint lithography combined with standard anodization etching is used to make perfectly organised triangular arrays of vertical cylindrical alumina nanopores onto standard <100>−oriented silicon wafers. Both the pore diameter and the period of alumina porous array are well controlled and can be tuned: the periods vary from 80 to 460 nm, and the diameters vary from 15 nm to any required diameter. These porous thin layers are then successfully used as templates for the guided epitaxial growth of organised mono-crystalline silicon nanowire arrays in a chemical vapour deposition chamber. We report the densities of silicon nanowires up to 9 × 109 cm−2 organised in highly regular arrays with excellent diameter distribution. All process steps are demonstrated on surfaces up to 2 × 2 cm2. Specific emphasis was made to select techniques compatible with microelectronic fabrication standards, adaptable to large surface samples and with a reasonable cost. Achievements made in the quality of the porous alumina array, therefore on the silicon nanowire array, widen the number of potential applications for this technology, such as optical detectors or biological sensors. PMID:23773702

Thermal Flow Sensors for Harsh Environments.

PubMed

Balakrishnan, Vivekananthan; Phan, Hoang-Phuong; Dinh, Toan; Dao, Dzung Viet; Nguyen, Nam-Trung

2017-09-08

Flow sensing in hostile environments is of increasing interest for applications in the automotive, aerospace, and chemical and resource industries. There are thermal and non-thermal approaches for high-temperature flow measurement. Compared to their non-thermal counterparts, thermal flow sensors have recently attracted a great deal of interest due to the ease of fabrication, lack of moving parts and higher sensitivity. In recent years, various thermal flow sensors have been developed to operate at temperatures above 500 °C. Microelectronic technologies such as silicon-on-insulator (SOI), and complementary metal-oxide semiconductor (CMOS) have been used to make thermal flow sensors. Thermal sensors with various heating and sensing materials such as metals, semiconductors, polymers and ceramics can be selected according to the targeted working temperature. The performance of these thermal flow sensors is evaluated based on parameters such as thermal response time, flow sensitivity. The data from thermal flow sensors reviewed in this paper indicate that the sensing principle is suitable for the operation under harsh environments. Finally, the paper discusses the packaging of the sensor, which is the most important aspect of any high-temperature sensing application. Other than the conventional wire-bonding, various novel packaging techniques have been developed for high-temperature application.

Thermal Flow Sensors for Harsh Environments

PubMed Central

Dinh, Toan; Dao, Dzung Viet

2017-01-01

Flow sensing in hostile environments is of increasing interest for applications in the automotive, aerospace, and chemical and resource industries. There are thermal and non-thermal approaches for high-temperature flow measurement. Compared to their non-thermal counterparts, thermal flow sensors have recently attracted a great deal of interest due to the ease of fabrication, lack of moving parts and higher sensitivity. In recent years, various thermal flow sensors have been developed to operate at temperatures above 500 °C. Microelectronic technologies such as silicon-on-insulator (SOI), and complementary metal-oxide semiconductor (CMOS) have been used to make thermal flow sensors. Thermal sensors with various heating and sensing materials such as metals, semiconductors, polymers and ceramics can be selected according to the targeted working temperature. The performance of these thermal flow sensors is evaluated based on parameters such as thermal response time, flow sensitivity. The data from thermal flow sensors reviewed in this paper indicate that the sensing principle is suitable for the operation under harsh environments. Finally, the paper discusses the packaging of the sensor, which is the most important aspect of any high-temperature sensing application. Other than the conventional wire-bonding, various novel packaging techniques have been developed for high-temperature application. PMID:28885595

Photovoltaic Power for Future NASA Missions

NASA Technical Reports Server (NTRS)

Landis, Geoffrey; Bailey, Sheila G.; Lyons, Valerie J. (Technical Monitor)

2002-01-01

Recent advances in crystalline solar cell technology are reviewed. Dual-junction and triple-junction solar cells are presently available from several U. S. vendors. Commercially available triple-junction cells consisting of GaInP, GaAs, and Ge layers can produce up to 27% conversion efficiency in production lots. Technology status and performance figures of merit for currently available photovoltaic arrays are discussed. Three specific NASA mission applications are discussed in detail: Mars surface applications, high temperature solar cell applications, and integrated microelectronic power supplies for nanosatellites.

Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.

PubMed

Atabaki, Amir H; Moazeni, Sajjad; Pavanello, Fabio; Gevorgyan, Hayk; Notaros, Jelena; Alloatti, Luca; Wade, Mark T; Sun, Chen; Kruger, Seth A; Meng, Huaiyu; Al Qubaisi, Kenaish; Wang, Imbert; Zhang, Bohan; Khilo, Anatol; Baiocco, Christopher V; Popović, Miloš A; Stojanović, Vladimir M; Ram, Rajeev J

2018-04-01

Electronic and photonic technologies have transformed our lives-from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions 1,2 . This goal is hindered by the fact that most silicon nanotechnologies-which enable our processors, computer memory, communications chips and image sensors-rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal-oxide-semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing 3,4 . By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions 5 , but with the performance, complexity and scalability of 'systems on a chip' 1,6-8 . As transistors smaller than ten nanometres across become commercially available 9 , and as new nanotechnologies emerge 10,11 , this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

Probing low noise at the MOS interface with a spin-orbit qubit.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jock, Ryan Michael; Jacobson, Noah Tobias; Harvey-Collard, Patrick

The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce amore » spin-orbit (SO) driven singlet- triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 μs using 99.95% 28Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise. isotopically enhanced silicon ST qubit systems« less

Towards tunable and multifunctional interfaces: Multicomponent amorphous alloys and bilayer stacks

NASA Astrophysics Data System (ADS)

Kast, Matthew G.

Controlling the electronic structure and requisite charge transfer at and across interfaces is a grand challenge of materials science. Despite decades of research and numerous successes in the fields microelectronics and photovoltaics much work remains to be done. In many applications, whether they be in microelectronics, photovoltaics or display technology there is a demand for multiple functions at a single interface. Historically, existent materials were either discarded as an option due to known properties or tested with some application based figure of merit in mind. Following this, the quality of the material and/or the preparation of the surface/interface to which the material would be deposited was optimized. As the microelectronics and photovoltaics industries have matured, continued progress (faster, lower power transistors and more efficient, cheaper, abundant solar cells) will require new materials (possibly not previously existent) that are fundamentally better for their application than their highly optimized existent counter parts. The manifestation of this has been seen in the microelectronics field with introduction of hafnium silicates to replace silica (which had previously been monumentally successful) as the gate dielectrics for the most advanced transistors. Continued progress in efficient, cheap, abundant photovoltaics will require similar advances. Advances will be needed in the area of new abundant absorbers that can be deposited cheaply which result in materials with high efficiencies. In addition, selective contacts capable of extracting charge from efficient absorbers with low ohmic losses and low recombination rates will be needed. Presented here are two approaches to the multifunctional interface problem, first the use of amorphous alloys that open up the accessible composition space of thin films significantly and second the use of bilayers that loosen the requirements of a single film at an interface.

Charge collection and SEU mechanisms

NASA Astrophysics Data System (ADS)

Musseau, O.

1994-01-01

In the interaction of cosmic ions with microelectronic devices a dense electron-hole plasma is created along the ion track. Carriers are separated and transported by the electric field and under the action of the concentration gradient. The subsequent collection of these carriers induces a transient current at some electrical node of the device. This "ionocurrent" (single ion induced current) acts as any electrical perturbation in the device, propagating in the circuit and inducing failures. In bistable systems (registers, memories) the stored data can be upset. In clocked devices (microprocessors) the parasitic perturbation may propagate through the device to the outputs. This type of failure only effects the information, and do not degrade the functionally of the device. The purpose of this paper is to review the mechanisms of single event upset in microelectronic devices. Experimental and theoretical results are presented, and actual questions and problems are discussed. A brief introduction recalls the creation of the dense plasma of electron-hole pairs. The basic processes for charge collection in a simple np junction (drift and diffusion) are presented. The funneling-field effect is discussed and experimental results are compared to numerical simulations and semi-empirical models. Charge collection in actual microelectronic structures is then presented. Due to the parasitic elements, coupling effects are observed. Geometrical effects, in densely packed structures, results in multiple errors. Electronic couplings are due to the carriers in excess, acting as minority carriers, that trigger parasitic bipolar transistors. Single event upset of memory cells is discussed, based on numerical and experimental data. The main parameters for device characterization are presented. From the physical interpretation of charge collection mechanisms, the intrinsic sensitivity of various microelectronic technologies is determined and compared to experimental data. Scaling laws and future trends are finally discussed.

Solid state microelectronics tolerant to radiation and high temperature. [JFET thick film hybrids

NASA Technical Reports Server (NTRS)

Draper, B. L.; Palmer, D. W.

1981-01-01

The 300 C electronics technology based on JFET thick film hybrids was tested up to 10 to the 9th power rad gamma (Si) and 10 to the 15th power neutrons/sq cm. Circuits and individual components from this technology all survived this total dose although some devices required 1 hour of annealing at 200 or 300 C to regain functionality. This technology used with real time annealing should function to levels greater than 10 to the 10th power rad gamma and 10 to the 16th power n/sq cm.

Radiation Testing, Characterization and Qualification Challenges for Modern Microelectronics and Photonics Devices and Technologies

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Cohn, Lewis M.

2008-01-01

At GOMAC 2007, we discussed a selection of the challenges for radiation testing of modern semiconductor devices focusing on state-of-the-art memory technologies. This included FLASH non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs). In this presentation, we extend this discussion in device packaging and complexity as well as single event upset (SEU) mechanisms using several technology areas as examples including: system-on-a-chip (SOC) devices and photonic or fiber optic systems. The underlying goal is intended to provoke thought for understanding the limitations and interpretation of radiation testing results.

Goals, achievements of microelectronics program

NASA Astrophysics Data System (ADS)

Schronk, L.

1985-05-01

Besides reviewing the objectives of the government's microelectronics program, the Microelectronics Enterprise, the production of metal oxide semiconductors and bipolar integrated-circuit chips, specific research and development results to date, and the plans for future activity are discussed. Marketing and domestic demand are discussed.

High quality silicon-based substrates for microwave and millimeter wave passive circuits

NASA Astrophysics Data System (ADS)

Belaroussi, Y.; Rack, M.; Saadi, A. A.; Scheen, G.; Belaroussi, M. T.; Trabelsi, M.; Raskin, J.-P.

2017-09-01

Porous silicon substrate is very promising for next generation wireless communication requiring the avoidance of high-frequency losses originating from the bulk silicon. In this work, new variants of porous silicon (PSi) substrates have been introduced. Through an experimental RF performance, the proposed PSi substrates have been compared with different silicon-based substrates, namely, standard silicon (Std), trap-rich (TR) and high resistivity (HR). All of the mentioned substrates have been fabricated where identical samples of CPW lines have been integrated on. The new PSi substrates have shown successful reduction in the substrate's effective relative permittivity to values as low as 3.7 and great increase in the substrate's effective resistivity to values higher than 7 kΩ cm. As a concept proof, a mm-wave bandpass filter (MBPF) centred at 27 GHz has been integrated on the investigated substrates. Compared with the conventional MBPF implemented on standard silicon-based substrates, the measured S-parameters of the PSi-based MBPF have shown high filtering performance, such as a reduction in insertion loss and an enhancement of the filter selectivity, with the joy of having the same filter performance by varying the temperature. Therefore, the efficiency of the proposed PSi substrates has been well highlighted. From 1994 to 1995, she was assistant of physics at (USTHB), Algiers . From 1998 to 2011, she was a Researcher at characterization laboratory in ionized media and laser division at the Advanced Technologies Development Center. She has integrated the Analog Radio Frequency Integrated Circuits team as Researcher since 2011 until now in Microelectronic and Nanotechnology Division at Advanced Technologies Development Center (CDTA), Algiers. She has been working towards her Ph.D. degree jointly at CDTA and Ecole Nationale Polytechnique, Algiers, since 2012. Her research interest includes fabrication and characterization of microwave passive devices on porous silicon as new substrate, such as characterization of FinFET components.

Copper-Based OHMIC Contracts for the Si/SiGe Heterojunction Bipolar Transistor Structure

NASA Technical Reports Server (NTRS)

Das, Kalyan; Hall, Harvey

1999-01-01

Silicon based heterojunction bipolar transistors (HBT) with SiGe base are potentially important devices for high-speed and high-frequency microelectronics. These devices are particularly attractive as they can be fabricated using standard Si processing technology. However, in order to realize the full potential of devices fabricated in this material system, it is essential to be able to form low resistance ohmic contacts using low thermal budget process steps and have full compatibility with VLSI/ULSI processing. Therefore, a study was conducted in order to better understand the contact formation and to develop optimized low resistance contacts to layers with doping densities corresponding to the p-type SiGe base and n-type Si emitter regions of the HBTS. These as-grown doped layers were implanted with BF(sub 2) up to 1 X 10(exp 16)/CM(exp 2) and As up to 5 x 10(exp 15)/CM2, both at 30 keV for the p-type SiGe base and n-type Si emitter layers, respectively, in order to produce a low sheet resistance surface layer. Standard transfer length method (TLM) contact pads on both p and n type layers were deposited using an e-beam evaporated trilayer structure of Ti/CufTi/Al (25)A/1500A/250A/1000A). The TLM pads were delineated by a photoresist lift-off procedure. These contacts in the as-deposited state were ohmic, with specific contact resistances for the highest implant doses of the order of 10(exp -7) ohm-CM2 and lower.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Yanfeng; Hui, Fei; Shi, Yuanyuan

The atomic force microscope is one of the most widespread tools in science, but many suppliers do not provide a competitive solution to make experiments in controlled atmospheres. Here, we provide a solution to this problem by fabricating a fast-response and user-friendly environmental chamber. We corroborate the correct functioning of the chamber by studying the formation of local anodic oxidation on a silicon sample (biased under opposite polarities), an effect that can be suppressed by measuring in a dry nitrogen atmosphere. The usefulness of this chamber goes beyond the example here presented, and it could be used in many othermore » fields of science, including physics, mechanics, microelectronics, nanotechnology, medicine, and biology.« less

Excellent electrical conductivity of the exfoliated and fluorinated hexagonal boron nitride nanosheets.

PubMed

Xue, Yafang; Liu, Qian; He, Guanjie; Xu, Kaibing; Jiang, Lin; Hu, Xianghua; Hu, Junqing

2013-01-24

The insulator characteristic of hexagonal boron nitride limits its applications in microelectronics. In this paper, the fluorinated hexagonal boron nitride nanosheets were prepared by doping fluorine into the boron nitride nanosheets exfoliated from the bulk boron nitride in isopropanol via a facile chemical solution method with fluoboric acid; interestingly, these boron nitride nanosheets demonstrate a typical semiconductor characteristic which were studied on a new scanning tunneling microscope-transmission electron microscope holder. Since this property changes from an insulator to a semiconductor of the boron nitride, these nanosheets will be able to extend their applications in designing and fabricating electronic nanodevices.

Study of a two-stage photobase generator for photolithography in microelectronics.

PubMed

Turro, Nicholas J; Li, Yongjun; Jockusch, Steffen; Hagiwara, Yuji; Okazaki, Masahiro; Mesch, Ryan A; Schuster, David I; Willson, C Grant

2013-03-01

The investigation of the photochemistry of a two-stage photobase generator (PBG) is described. Absorption of a photon by a latent PBG (1) (first step) produces a PBG (2). Irradiation of 2 in the presence of water produces a base (second step). This two-photon sequence (1 + hν → 2 + hν → base) is an important component in the design of photoresists for pitch division technology, a method that doubles the resolution of projection photolithography for the production of microelectronic chips. In the present system, the excitation of 1 results in a Norrish type II intramolecular hydrogen abstraction to generate a 1,4-biradiacal that undergoes cleavage to form 2 and acetophenone (Φ ∼ 0.04). In the second step, excitation of 2 causes cleavage of the oxime ester (Φ = 0.56) followed by base generation after reaction with water.

A Survey of Current Trends in Master's Programs in Microelectronics

ERIC Educational Resources Information Center

Bozanic, Mladen; Sinha, Saurabh

2018-01-01

Contribution: This paper brings forward a paradigm shift in microelectronic and nanoelectronic engineering education. Background: An increasing number of universities are offering graduate-level electrical engineering degree programs with multi-disciplinary Master's-level specialization in microelectronics or nanoelectronics. The paradigm shift…

Microelectronics in Education

ERIC Educational Resources Information Center

Orton, Richard J. J.

2011-01-01

The history and meaning of the term "microelectronics" is reviewed, followed by a discussion of the key inventions of the Intel microprocessor in 1971 and the Texas Instruments electronic pocket calculator in 1975. The six characteristic features of microelectronic components are then defined. The UK prime minister Jim Callaghan's…

Vacuum Microelectronic Field Emission Array Devices for Microwave Amplification.

NASA Astrophysics Data System (ADS)

Mancusi, Joseph Edward

This dissertation presents the design, analysis, and measurement of vacuum microelectronic devices which use field emission to extract an electron current from arrays of silicon cones. The arrays of regularly-spaced silicon cones, the field emission cathodes or emitters, are fabricated with an integrated gate electrode which controls the electric field at the tip of the cone, and thus the electron current. An anode or collector electrode is placed above the array to collect the emission current. These arrays, which are fabricated in a standard silicon processing facility, are developed for use as high power microwave amplifiers. Field emission has been studied extensively since it was first characterized in 1928, however due to the large electric fields required practical field emission devices are difficult to make. With the development of the semiconductor industry came the development of fabrication equipment and techniques which allow for the manufacture of the precision micron-scale structures necessary for practical field emission devices. The active region of a field emission device is a vacuum, therefore the electron travel is ballistic. This analysis of field emission devices includes electric field and electron emission modeling, development of a device equivalent circuit, analysis of the parameters in the equivalent circuit, and device testing. Variations in device structure are taken into account using a statistical model based upon device measurements. Measurements of silicon field emitter arrays at DC and RF are presented and analyzed. In this dissertation, the equivalent circuit is developed from the analysis of the device structure. The circuit parameters are calculated from geometrical considerations and material properties, or are determined from device measurements. It is necessary to include the emitter resistance in the equivalent circuit model since relatively high resistivity silicon wafers are used. As is demonstrated, the circuit model accurately predicts the magnitude of the emission current at a number of typical bias current levels when the device is operating at frequencies within the range of 10 MHz to 1 GHz. At low frequencies and at high frequencies within this range, certain parameters are negligible, and simplifications may be made in the equivalent circuit model.

Radiation Effects: Overview for Space Environment Specialists

NASA Technical Reports Server (NTRS)

Ladbury, Ray

2017-01-01

Radiation Hardness Assurance (RHA) methodologies need to evolve to capitalize on the increased flexibility introduced by new models of space radiation environments. This presentation examines the characteristics of various radiation threats, the sources of error that RHA methodologies seek to control and the contributions of environment models to those errors. The influence of trends in microelectronic device technology is also considered.

2015 Marine Corps Security Environment Forecast: Futures 2030-2045

DTIC Science & Technology

2015-01-01

The technologies that make the iPhone “smart” were publically funded—the Internet, wireless networks, the global positioning system, microelectronics...Energy Revolution (63 percent);  Internet of Things (ubiquitous sensors embedded in interconnected computing devices) (50 percent);  “Sci-Fi...Neuroscience & artificial intelligence - Sensors /control systems -Power & energy -Human-robot interaction Robots/autonomous systems will become part of the

Microelectronics and Office Jobs. The Impact of the Chip on Women's Employment.

ERIC Educational Resources Information Center

Werneke, Diane

As labor-saving, efficiency-increasing electronic technology is introduced into offices, jobs held by women will change. Although some jobs may be lost, most job loss will be absorbed by attrition and reduction of waste. Fewer new openings may occur in office jobs, however, especially in a recessionary economy. On the other hand, the jobs that are…

The international electronics industry.

PubMed

LaDou, J; Rohm, T

1998-01-01

High-technology microelectronics has a major presence in countries such as China, India, Indonesia, and Malaysia, now the third-largest manufacturer of semiconductor chips. The migration of European, Japanese, and American companies accommodates regional markets. Low wage rates and limited enforcement of environmental regulations in developing countries also serve as incentives for the dramatic global migration of this industry. The manufacture of microelectonics products is accompanied by a high incidence of occupational illnesses, which may reflect the widespread use of toxic materials. Metals, photoactive chemicals, solvents, acids, and toxic gases are used in a wide variety of combinations and workplace settings. The industry also presents problems of radiation exposure and various occupational stressors, including some unresolved ergonomic issues. The fast-paced changes of the technology underlying this industry, as well as the stringent security precautions, have added to the difficulty of instituting proper health and safety measures. Epidemiologic studies reveal an alarming increase in spontaneous abortions among cleanroom manufacturing workers; no definitive study has yet identified its cause. Other health issues, including occupational cancer, are yet to be studied. The microelectronics industry is a good example of an industry that is exported to many areas of the world before health and safety problems are properly addressed and resolved.

Microelectronics and Special Education. CET/MEP Information Sheet.

ERIC Educational Resources Information Center

Council for Educational Technology, London (England).

Used as an additional aid by the teacher, microelectronics can assist mentally and physically handicapped children to meet educational objectives that have been specifically agreed upon for the individual child. Microelectronics can help deaf children develop speech production, communication skills, and grammar and sentence construction;…

Microelectronics and Music Education.

ERIC Educational Resources Information Center

Hofstetter, Fred T.

1979-01-01

This look at the impact of microelectronics on computer-assisted instruction (CAI) in music notes trends toward new applications and lower costs. Included are: a rationale for CAI in music, a list of sample programs, comparison of five microelectronic music systems, PLATO cost projections, and sources of further information. (SJL)

High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

PubMed Central

Lin, Yen‐Hung; Faber, Hendrik; Labram, John G.; Stratakis, Emmanuel; Sygellou, Labrini; Kymakis, Emmanuel; Hastas, Nikolaos A.; Li, Ruipeng; Zhao, Kui; Amassian, Aram; Treat, Neil D.; McLachlan, Martyn

2015-01-01

High mobility thin‐film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin‐film transistors is reported that exploits the enhanced electron transport properties of low‐dimensional polycrystalline heterojunctions and quasi‐superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band‐like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature‐dependent electron transport and capacitance‐voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas‐like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll‐to‐roll, etc.) and can be seen as an extremely promising technology for application in next‐generation large area optoelectronics such as ultrahigh definition optical displays and large‐area microelectronics where high performance is a key requirement. PMID:27660741

Novel nano-OLED based probes for very high resolution optical microscopy

NASA Astrophysics Data System (ADS)

Zhao, Yiying

Near-field scanning optical microscopy (NSOM) has been applied in the study of nanomaterials, microelectronics, photonics, plasmonics, cells, and molecules. However, conventional NSOM relies on optically pumped probes, suffering low optical transmission, heating of the tip, and poor reproducibility of probe fabrication, increasing the cost, impeding usability, reducing practical imaging resolution, and limiting NSOM's utility. In this thesis, I demonstrate a novel probe based on a nanoscale, electrically pumped organic light-emitting device (OLED) formed on the tip of a low-cost, commercially available atomic force microscopy (AFM) probe. I describe the structure, fabrication, and principles of this novel probe's operation, and discuss its potential to overcome the limitations of conventional NSOM probes. The broader significance of this work in the field of organic optoelectronics is also discussed. Briefly, OLEDs consist of organic thin films sandwiched between two electrodes. Under bias, electrons and holes are injected into the organic layers, leading to radiative recombination. Depositing a small molecular OLED in vacuum onto a pyramid-tipped AFM probe results in a laminar structure that is highly curved at the tip. Simple electrical modeling predicts concentration of electric field and localized electron injection into the organic layers at the tip, improving the local charge balance in an otherwise electron-starved OLED. Utilizing an "inverted" OLED structure (i.e. cathode on the "bottom"), light emission is localized to sub-200 nm sized, green light emitting regions on probe vertices; light output power in the range of 0.1-0.5 nanowatts was observed, comparable to that of typical fiber based NSOM probes but with greater power efficiency. Massive arrays of similar sub-micron OLEDs were also fabricated by depositing onto textured silicon substrates, demonstrating the superior scalability of the probe fabrication process (e.g. relative to pulled glass fibers). The investigation of the effect of non-planar substrate geometry on charge injection, transport and recombination provides broader insights into OLEDs made on rough substrates, general understanding of OLED operation (e.g. filamentary charge conduction) and degradation, and potentially helps to improve technologically important "inverted" OLED structures.

A novel monolithic piezoelectric actuated flexure-mechanism based wire clamp for microelectronic device packaging.

PubMed

Liang, Cunman; Wang, Fujun; Tian, Yanling; Zhao, Xingyu; Zhang, Hongjie; Cui, Liangyu; Zhang, Dawei; Ferreira, Placid

2015-04-01

A novel monolithic piezoelectric actuated wire clamp is presented in this paper to achieve fast, accurate, and robust microelectronic device packaging. The wire clamp has compact, flexure-based mechanical structure and light weight. To obtain large and robust jaw displacements and ensure parallel jaw grasping, a two-stage amplification composed of a homothetic bridge type mechanism and a parallelogram leverage mechanism was designed. Pseudo-rigid-body model and Lagrange approaches were employed to conduct the kinematic, static, and dynamic modeling of the wire clamp and optimization design was carried out. The displacement amplification ratio, maximum allowable stress, and natural frequency were calculated. Finite element analysis (FEA) was conducted to evaluate the characteristics of the wire clamp and wire electro discharge machining technique was utilized to fabricate the monolithic structure. Experimental tests were carried out to investigate the performance and the experimental results match well with the theoretical calculation and FEA. The amplification ratio of the clamp is 20.96 and the working mode frequency is 895 Hz. Step response test shows that the wire clamp has fast response and high accuracy and the motion resolution is 0.2 μm. High speed precision grasping operations of gold and copper wires were realized using the wire clamper.

Integrated automation for manufacturing of electronic assemblies

NASA Technical Reports Server (NTRS)

Sampite, T. Joseph

1991-01-01

Since 1985, the Naval Ocean Systems Center has been identifying and developing needed technology for flexible manufacturing of hybrid microelectronic assemblies. Specific projects have been accomplished through contracts with manufacturing companies, equipment suppliers, and joint efforts with other government agencies. The resulting technology has been shared through semi-annual meetings with government, industry, and academic representatives who form an ad hoc advisory panel. More than 70 major technical capabilities have been identified for which new development is needed. Several of these developments have been completed and are being shared with industry.

Trends in Microfabrication Capabilities & Device Architectures.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bauer, Todd; Jones, Adam; Lentine, Anthony L.

The last two decades have seen an explosion in worldwide R&D, enabling fundamentally new capabilities while at the same time changing the international technology landscape. The advent of technologies for continued miniaturization and electronics feature size reduction, and for architectural innovations, will have many technical, economic, and national security implications. It is important to anticipate possible microelectronics development directions and their implications on US national interests. This report forecasts and assesses trends and directions for several potentially disruptive microfabrication capabilities and device architectures that may emerge in the next 5-10 years.

Caracterisation electrique et vieillissement de resistances de silicium polycristallin modifiees par laser

NASA Astrophysics Data System (ADS)

Fantoni, Julie

2011-12-01

Several classes of integrated microelectronic circuits require highly precise and stable analog components that cannot be obtained directly through standard CMOS fabrication processes. Those components must thus be calibrated either by a modification of the fabrication process or by the application of a post-fabrication tuning procedure. Many successful post-fabrication tuning processes have been introduced in the field of resistor calibration, including resistor laser trimming which is the core subject of this thesis. In this thesis, trimmed components are standard CMOS 180nm technology polysilicon resistors, integrated in circuits specially designed to allow laser intervention on their surface. The laser used is a nanosecond pulsed laser for which the fluence is set below the melting threshold of polysilicon in order to prevent damage to the material structure. This novel low-power highly localized procedure reduces the risk of damaging sensitive surrounding circuits and requires no additional fabrication step, allowing smaller dies areas and reduced costs. Precise, reliable and reproducible devices have been tuned using this technique with a precision below 500 ppm. The main objective of this research is to study and analyze the effect of the laser parameters variation on the trimmed component properties and to optimize those parameters in regard of the desired precision and stability of the final product. Raman spectroscopic measurements are performed to observe and characterize structural modifications of the polysilicon material following laser irradiation as precise resistance measurements and standardized in-oven aging tests allow the complete characterization of the device in regard of precision and stability. It is shown that for a given precision, this novel low-power trimming technique produces devices with a stability comparable to those obtained with another trimming technology such as the pulsed current method. An electrical model is also developed to predict the resistance modification with the laser fluence, the number of pulses as well as the duration of those pulses. The model is shown to be 1 500 ppm accurate when laser fluence is set accordingly to the melting threshold of polysilicon. Concerning stability, results show that, following a 300 h, 150 °C aging procedure, laser trimmed components present a 1.2% resistance drift from their initial resistance value whereas a 0.7% drift is observed on untrimmed samples. Those results are comparable to those obtained with the pulsed current trimming technique which produces trimmed component with a 1% resistance drift following a 200 h 162 °C aging procedure. Recommendations are given in the conclusion as to which laser parameters to modify and how to modify them in order to produce the desired trimmed devices with the best performance possible.

Glass-to-Metal Seal Quality.

DTIC Science & Technology

1982-05-01

SELECTION AND EVALUATION . . . . . . . . . . . . . . 2 2.2 MICROELECTRONIC PACKAGES AND THEIR QUALITY . . . * . . . . . . . . 5 2.3 EQUIPMENT...liquid penetrant testing for various microelectronic package hermeticity. I t I MATERIALS AND EQUIPMENT 2.1 DYE PENETRANT SELECTION AND EVALUATION...a commercial visible dye penetrant and a commercial fluorescent dye penetrant were selected as being suitable for the testing of microelectronic

Initial Results from the Radiation Dosimetry Experiment (RaD-X) Balloon Flight Mission

NASA Technical Reports Server (NTRS)

Mertens, Christopher J.

2015-01-01

The NASA Radiation Dosimetry Experiment (RaD-X) high-altitude balloon mission was successfully launched from Fort Sumner, New Mexico USA on 25 September, 2015. Over 15 hours of science data were obtained from four dosimeters at altitudes above about 25 km. The four dosimeters flown on the RaD-X science payload are a Hawk version 3.0 Tissue Equivalent Proportional Counter (TEPC) manufactured by Far West Technologies, a Liulin dosimeter-spectrometer produced by the Solar Research and Technology Institute, Bulgarian Academy of Sciences, a total ionizing dose detector manufactured by Teledyne Microelectronic Technologies, and the RaySure detector provided by the University of Surrey.

JPRS Report, Science & Technology, Europe

DTIC Science & Technology

1991-08-13

Integrate Former Dresden Microelectronics Center [Duesseldorf VDI NACHRICHTEN, 23 Aug 91] 35 Switzerland’s Contraves To Increase Thin-Film... drugs on the mem- brane systems of living cells will be the first application. Microtest systems of this type can be utilized in phar- macy for...other drugs affecting the membrane, and to their effects on the cellular system. German Research Ministry Funds Biosensor Project 91MI0556 Bonn

Proceedings on Combating the Unrestricted Warfare Threat: Integrating Strategy, Analysis, and Technology, 20-21 March 2007

DTIC Science & Technology

2007-03-01

Prosthetics to enable return to units without loss of capability Quantum...and will give us a big advantage in terms of unrestricted warfare. Figure 17 high-Productivity Computing System PRoSThETICS We have an exciting...program in prosthetics (Figure 18). It started with a monkey at Duke University. We put microelectronic implants into her brain, taught her

USSR Report Machine Tools and Metalworking Equipment

DTIC Science & Technology

1986-01-24

meat -packing plants). In the past, the main emphasis on finished products in individual areas slowed down development and modernization, as well as...social effect . Also related to further improvement in the microelectronic base, micro and minicomputers is development work on the creation of a...more effectively as well as those being built; develop scientific technological and production cooperation; use achievements obtained as a result of

Status of research and development in coordinate-measurement technology

NASA Astrophysics Data System (ADS)

Dich, L. Z.; Latyev, S. M.

1994-09-01

This paper discusses problems involved in developing and operating coordinate-measuring machines. The status of this area of precision instrumentation is analyzed. These problems are made critical not only by the requirements of the machine-tool industry but also by those of the microelectronics industry, both of which use coordinate tables, step-up gears, and other equipment in which precise coordinate measurements are necessary.

Photonic technology revolution influence on the defence area

NASA Astrophysics Data System (ADS)

Galas, Jacek; Litwin, Dariusz; Błocki, Narcyz; Daszkiewicz, Marek

2017-10-01

Revolutionary progress in the photonic technology provides the ability to develop military systems of new properties not possible to obtain with the use of classical technologies. In recent years, this progress has resulted in developing advanced, complex, multifunctional and relatively cheap Photonic Integrated Circuits (PIC) or Hybrid Photonics Circuits (HPC) built of a collection of standardized optical, optoelectronic and photonic components. This idea is similar to the technology of Electronic Integrated Circuits, which has revolutionized the microelectronic market. The novel approach to photonic technology is now revolutionizing the photonics' market. It simplifies the photonics technology and enables creation of technological centers for designing, development and production of advanced optical and photonic systems in the EU and other countries. This paper presents some selected photonic technologies and their impact on such defense systems like radars, radiolocation, telecommunication, and radio-communication systems.

Self-formed cylindrical microcapillaries through surface migration of silicon and their application to single-cell analysis

NASA Astrophysics Data System (ADS)

Zeng, Fan; Luo, Yuan; Yobas, Levent; Wong, Man

2013-05-01

Surface migration of monocrystalline silicon has been applied to demonstrate self-formed cylindrical microcapillaries with diameters from 0.8 to 2.8 µm based on the microstructured substrate topography. The microcapillaries are entirely enclosed in silicon and can be conveniently etched to create fluidic access ports and microchannels for their subsequent integration into functional microfluidic devices. Moreover, the microcapillaries can be thermally oxidized through their access ports with silica walls remain intact upon release from surrounding silicon in an effort to enhance optical clarity. Straight microcapillaries and microcapillaries with perpendicular turns and crossings (junctions) have all been fabricated and validated for fluidic continuity with a fluorescein solution pumped through. The utility of the microcapillaries has been showcased on particle traps in which biological cells are probed for single-cell impedance spectroscopy. The approach disclosed, given its full compatibility with semiconductor device fabrication, offers great potential towards intelligent cell and molecule-based devices merging microelectronics and microfluidics.

Higher-resolution selective metallization on alumina substrate by laser direct writing and electroless plating

NASA Astrophysics Data System (ADS)

Lv, Ming; Liu, Jianguo; Wang, Suhuan; Ai, Jun; Zeng, Xiaoyan

2016-03-01

How to fabricate conductive patterns on ceramic boards with higher resolution is a challenge in the past years. The fabrication of copper patterns on alumina substrate by laser direct writing and electroless copper plating is a low cost and high efficiency method. Nevertheless, the lower resolution limits its further industrial applications in many fields. In this report, the mechanisms of laser direct writing and electroless copper plating were studied. The results indicated that as the decomposed products of precursor PdCl2 have different chemical states respectively in laser-irradiated zone (LIZ) and laser-affected zone (LAZ). This phenomenon was utilized and a special chemical cleaning method with aqua regia solution was taken to selectively remove the metallic Pd in LAZ, while kept the PdO in LIZ as the only active seeds. As a result, the resolution of subsequent copper patterns was improved significantly. This technique has a great significance to develop the microelectronics devices.

NASA Tech Briefs, November 2013

NASA Technical Reports Server (NTRS)

2013-01-01

Topics include: Cryogenic Liquid Sample Acquisition System for Remote Space Applications; 5 Spatial Statistical Data Fusion (SSDF); GPS Estimates of Integrated Precipitable Water Aid Weather Forecasters; Integrating a Microwave Radiometer into Radar Hardware for Simultaneous Data Collection Between the Instruments; Rapid Detection of Herpes Viruses for Clinical Applications; High-Speed Data Recorder for Space, Geodesy, and Other High-Speed Recording Applications; Datacasting V3.0; An All-Solid-State, Room-Temperature, Heterodyne Receiver for Atmospheric Spectroscopy at 1.2 THz; Stacked Transformer for Driver Gain and Receive Signal Splitting; Wireless Integrated Microelectronic Vacuum Sensor System; Fabrication Method for LOBSTER-Eye Optics in <110> Silicon; Compact Focal Plane Assembly for Planetary Science; Fabrication Methods for Adaptive Deformable Mirrors; Visiting Vehicle Ground Trajectory Tool; Workflow-Based Software Development Environment; Mobile Thread Task Manager; A Kinematic Calibration Process for Flight Robotic Arms; Magnetostrictive Alternator; Bulk Metallic Glasses and Composites for Optical and Compliant Mechanisms; Detection of Only Viable Bacterial Spores Using a Live/Dead Indicator in Mixed Populations; and Intravenous Fluid Generation System.

Photo-Attachment of Biomolecules for Miniaturization on Wicking Si-Nanowire Platform

PubMed Central

Cheng, He; Zheng, Han; Wu, Jia Xin; Xu, Wei; Zhou, Lihan; Leong, Kam Chew; Fitzgerald, Eugene; Rajagopalan, Raj; Too, Heng Phon; Choi, Wee Kiong

2015-01-01

We demonstrated the surface functionalization of a highly three-dimensional, superhydrophilic wicking substrate using light to immobilize functional biomolecules for sensor or microarray applications. We showed here that the three-dimensional substrate was compatible with photo-attachment and the performance of functionalization was greatly improved due to both increased surface capacity and reduced substrate reflectivity. In addition, photo-attachment circumvents the problems induced by wicking effect that was typically encountered on superhydrophilic three-dimensional substrates, thus reducing the difficulty of producing miniaturized sites on such substrate. We have investigated various aspects of photo-attachment process on the nanowire substrate, including the role of different buffers, the effect of wavelength as well as how changing probe structure may affect the functionalization process. We demonstrated that substrate fabrication and functionalization can be achieved with processes compatible with microelectronics processes, hence reducing the cost of array fabrication. Such functionalization method coupled with the high capacity surface makes the substrate an ideal candidate for sensor or microarray for sensitive detection of target analytes. PMID:25689680

Lab-on-a-chip with beta-poly(vinylidene fluoride) based acoustic microagitation.

PubMed

Cardoso, V F; Catarino, S O; Serrado Nunes, J; Rebouta, L; Rocha, J G; Lanceros-Méndez, S; Minas, G

2010-05-01

This paper reports a fully integrated disposable lab-on-a-chip with acoustic microagitation based on a piezoelectric ss-poly(vinylidene fluoride) (ss-PVDF) polymer. The device can be used for the measurement, by optical absorption spectroscopy, of biochemical parameters in physiological fluids. It comprises two dies: the fluidic die that contains the reaction chambers fabricated in SU-8 and the ss-PVDF polymer deposited underneath them; and the detection die that contains the photodetectors, its readout electronics, and the piezoelectric actuation electronics, all fabricated in a CMOS microelectronic process. The microagitation technique improves mixing and shortens reaction time. Further, it generates heating, which also improves the reaction time of the fluids. In this paper, the efficiency of the microagitation system is evaluated as a function of the amplitude and the frequency of the signal actuation. The relative contribution of the generated heating is also discussed. The system is tested for the measurement of the uric acid concentration in urine.

Lasing in silicon–organic hybrid waveguides

PubMed Central

Korn, Dietmar; Lauermann, Matthias; Koeber, Sebastian; Appel, Patrick; Alloatti, Luca; Palmer, Robert; Dumon, Pieter; Freude, Wolfgang; Leuthold, Juerg; Koos, Christian

2016-01-01

Silicon photonics enables large-scale photonic–electronic integration by leveraging highly developed fabrication processes from the microelectronics industry. However, while a rich portfolio of devices has already been demonstrated on the silicon platform, on-chip light sources still remain a key challenge since the indirect bandgap of the material inhibits efficient photon emission and thus impedes lasing. Here we demonstrate a class of infrared lasers that can be fabricated on the silicon-on-insulator (SOI) integration platform. The lasers are based on the silicon–organic hybrid (SOH) integration concept and combine nanophotonic SOI waveguides with dye-doped organic cladding materials that provide optical gain. We demonstrate pulsed room-temperature lasing with on-chip peak output powers of up to 1.1 W at a wavelength of 1,310 nm. The SOH approach enables efficient mass-production of silicon photonic light sources emitting in the near infrared and offers the possibility of tuning the emission wavelength over a wide range by proper choice of dye materials and resonator geometry. PMID:26949229

Performance characteristics of nanocrystalline diamond vacuum field emission transistor array

NASA Astrophysics Data System (ADS)

Hsu, S. H.; Kang, W. P.; Davidson, J. L.; Huang, J. H.; Kerns, D. V.

2012-06-01

Nitrogen-incorporated nanocrystalline diamond (ND) vacuum field emission transistor (VFET) with self-aligned gate is fabricated by mold transfer microfabrication technique in conjunction with chemical vapor deposition (CVD) of nanocrystalline diamond on emitter cavity patterned on silicon-on-insulator (SOI) substrate. The fabricated ND-VFET demonstrates gate-controlled emission current with good signal amplification characteristics. The dc characteristics of the ND-VFET show well-defined cutoff, linear, and saturation regions with low gate turn-on voltage, high anode current, negligible gate intercepted current, and large dc voltage gain. The ac performance of the ND-VFET is measured, and the experimental data are analyzed using a modified small signal circuit model. The experimental results obtained for the ac voltage gain are found to agree with the theoretical model. A higher ac voltage gain is attainable by using a better test setup to eliminate the associated parasitic capacitances. The paper reveals the amplifier characteristics of the ND-VFET for potential applications in vacuum microelectronics.

Performance characteristics of nanocrystalline diamond vacuum field emission transistor array

NASA Astrophysics Data System (ADS)

Hsu, S. H.; Kang, W. P.; Davidson, J. L.; Huang, J. H.; Kerns, D. V.

2012-05-01

Nitrogen-incorporated nanocrystalline diamond (ND) vacuum field emission transistor (VFET) with self-aligned gate is fabricated by mold transfer microfabrication technique in conjunction with chemical vapor deposition (CVD) of nanocrystalline diamond on emitter cavity patterned on silicon-on-insulator (SOI) substrate. The fabricated ND-VFET demonstrates gate-controlled emission current with good signal amplification characteristics. The dc characteristics of the ND-VFET show well-defined cutoff, linear, and saturation regions with low gate turn-on voltage, high anode current, negligible gate intercepted current, and large dc voltage gain. The ac performance of the ND-VFET is measured, and the experimental data are analyzed using a modified small signal circuit model. The experimental results obtained for the ac voltage gain are found to agree with the theoretical model. A higher ac voltage gain is attainable by using a better test setup to eliminate the associated parasitic capacitances. The paper reveals the amplifier characteristics of the ND-VFET for potential applications in vacuum microelectronics.

Microelectronics bioinstrumentation systems

NASA Technical Reports Server (NTRS)

Ko, W. H.

1977-01-01

Microelectronic bioinstrumentation systems to be employed in the Cardiovascular Deconditioning Program were developed. Implantable telemetry systems for long-term monitoring of animals on earth were designed to collect physiological data necessary for the understanding of the mechanisms of cardiovascular deconditioning. In-flight instrumentation systems, microelectronic instruments, and RF powering techniques for other life science experiments in the NASA program were studied.

Relevance of microelectronic education to industrial needs

NASA Technical Reports Server (NTRS)

Prince, J. L.; Lathrop, J. W.

1977-01-01

The relevance of microelectronic education to industrial needs was evaluated, and four categories were surveyed: (1) facts and rules; (2) skills; (3) personality; and (4) deductive-inductive reasoning. Examples of specific items in each category are given to illustrate their meaning and it was indicated as to which items in each category are strongly impacted by microelectronics courses and laboratories.

Nanoscale Device Properties of Tellurium-based Chalcogenide Compounds

NASA Astrophysics Data System (ADS)

Dahal, Bishnu R.

The great progress achieved in miniaturization of microelectronic devices has now reached a distinct bottleneck, as devices are starting to approach the fundamental fabrication and performance limit. Even if a major breakthrough is made in the fabrication process, these scaled down electronic devices will not function properly since the quantum effects can no longer be neglected in the nanoscale regime. Advances in nanotechnology and new materials are driving novel technologies for future device applications. Current microelectronic devices have the smallest feature size, around 10 nm, and the industry is planning to switch away from silicon technology in the near future. The new technology will be fundamentally different. There are several leading technologies based on spintronics, tunneling transistors, and the newly discovered 2-dimensional material systems. All of these technologies are at the research level, and are far from ready for use in making devices in large volumes. This dissertation will focus on a very promising material system, Te-based chalcogenides, which have potential applications in spintronics, thermoelectricity and topological insulators that can lead to low-power-consumption electronics. Very recently it was predicted and experimentally observed that the spin-orbit interaction in certain materials can lead to a new electronic state called topological insulating phase. The topological insulator, like an ordinary insulator, has a bulk energy gap separating the highest occupied electronic band from the lowest empty band. However, the surface states in the case of a three-dimensional or edge states in a two-dimensional topological insulator allow electrons to conduct at the surface, due to the topological character of the bulk wavefunctions. These conducting states are protected by time-reversal symmetry, and cannot be eliminated by defects or chemical passivation. The edge/surface states satisfy Dirac dispersion relations, and hence the physics of relativistic Dirac fermions becomes relevant. This results in peculiar quantum oscillations in transport measurements which make it possible to unambiguously identify surface Dirac fermions. In order to lead us towards a better understanding of topological insulators and their applications, it is, however, necessary to develop techniques that will enable high quality materials to be obtained in a routine and reliable way. However, this has been an enormous challenge so far. Since highly volatile components are involved in most topological insulators, whether in bulk single crystal or epitaxial thin films or chemical vapor deposition grown nanoribbons, maintaining near stoichiometry has proven to be very difficult. Observing the predicted transport properties of these systems, particularly surface carriers of high mobility whilst maintaining bulk insulating states, is seriously impeded by the unintentional doping of bulk carriers. Moreover, in thin films and hetrostructures, at the all-important thickness range of a few nanometers, the additional limitation of the film-substrate lattice mismatch and the resulting strain in films is a major concern. In this thesis, we have developed a synthesis technique to obtain high quality SnTe nanoribbons, which is a topological crystalline insulator and its surface states are topologically protected by mirror symmetry of the lattice. The obtained ribbons are nearly stoichiometric and show strong semiconducting behavior with a bandgap of 240 meV. This is the first time high quality SnTe nanoribbons have been synthesized. High quality SnTe nanoribbons form a potential platform to understand the magnetic topological insulating behavior. In this thesis, it is also shown that magnetic behavior can be introduced in SnTe nanoribbons by means of chromium doping. Magnetically doped topological insulators, possessing an energy gap created at the Dirac point are predicted to exhibit exotic phenomena including the quantized anomalous Hall Effect and a dissipationless transport, which facilitate the development of low-power-consumption devices using electron spins. In addition, this thesis also discusses the growth and transport properties of another Te-based chalcogenide system, CoTe with ferrimagnetic and semiconducting behavior. We have shown that the structural, electrical and magnetic properties can be tuned by controlling the amount of cobalt in the system.

Nano-Satellite Avionics

NASA Technical Reports Server (NTRS)

Culver, Harry

1999-01-01

Abstract NASA's Goddard Space Flight Center (GSFC) is currently developing a new class of satellites called the nano-satellite (nano-sat). A major objective of this development effort is to provide the technology required to enable a constellation of tens to hundreds of nano-satellites to make both remote and in-situ measurements from space. The Nano-sat will be a spacecraft weighing a maximum of 10 kg, including the propellant mass, and producing at least 5 Watts of power to operate the spacecraft. The electronics are required to survive a total radiation dose rate of 100 krads for a mission lifetime of two years. There are many unique challenges that must be met in order to develop the avionics for such a spacecraft. The first challenge is to develop an architecture that will operate on the allotted 5 Watts and meet the diverging requirements of multiple missions. This architecture will need to incorporate a multitude of new advanced microelectronic technologies. The microelectronics developed must be a modular and scalable packaging of technology to solve the problem of developing a solution to both reduce cost and meet the requirements of various missions. This development will utilize the most cost effective approach, whether infusing commercially driven semiconductor devices into spacecraft applications or partnering with industry to design and develop low cost, low power, low mass, and high capacity data processing devices. This paper will discuss the nano-sat architecture and the major technologies that will be developed. The major technologies that will be covered include: (1) Light weight Low Power Electronics Packaging, (2) Radiation Hard/Tolerant, Low Power Processing Platforms, (3) High capacity Low Power Memory Systems (4) Radiation Hard reconfiguragble field programmable gate array (rFPGA)

Bi-level microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2004-01-06

A package with an integral window for housing a microelectronic device. The integral window is bonded directly to the package without having a separate layer of adhesive material disposed in-between the window and the package. The device can be a semiconductor chip, CCD chip, CMOS chip, VCSEL chip, laser diode, MEMS device, or IMEMS device. The multilayered package can be formed of a LTCC or HTCC cofired ceramic material, with the integral window being simultaneously joined to the package during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded so that the light-sensitive side is optically accessible through the window. The package has at least two levels of circuits for making electrical interconnections to a pair of microelectronic devices. The result is a compact, low-profile package having an integral window that is hermetically sealed to the package prior to mounting and interconnecting the microelectronic device(s).

Single level microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2003-12-09

A package with an integral window for housing a microelectronic device. The integral window is bonded directly to the package without having a separate layer of adhesive material disposed in-between the window and the package. The device can be a semiconductor chip, CCD chip, CMOS chip, VCSEL chip, laser diode, MEMS device, or IMEMS device. The package can be formed of a multilayered LTCC or HTCC cofired ceramic material, with the integral window being simultaneously joined to the package during cofiring. The microelectronic device can be flip-chip interconnected so that the light-sensitive side is optically accessible through the window. A glob-top encapsulant or protective cover can be used to protect the microelectronic device and electrical interconnections. The result is a compact, low profile package having an integral window that is hermetically sealed to the package prior to mounting and interconnecting the microelectronic device.

Spreading devices into a 2-D module layout

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koplow, Jeffrey P.; Gupta, Vipin P.; Nielson, Gregory N.

An apparatus, method, and system, the apparatus including a receiving member dimensioned to receive an array of microelectronic devices; and a linkage member coupled to the receiving member, the linkage member configured to move the receiving member in at least two dimensions so as to modify a spacing between the electronic devices within the array of microelectronic devices received by the receiving member. The method including coupling an array of microelectronic devices to an expansion assembly; and expanding the expansion assembly so as to expand the array of microelectronic devices in at least two directions within a single plane. Themore » system including a support member; an expansion assembly coupled to the support member, the expansion assembly having a plurality of receiving members configured to move in at least two dimensions within a single plane; and a plurality of microelectronic devices coupled to each of the plurality of receiving members.« less

Photoemission-based microelectronic devices

PubMed Central

Forati, Ebrahim; Dill, Tyler J.; Tao, Andrea R.; Sievenpiper, Dan

2016-01-01

The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas or vacuum channel may scale their speed, wavelength and power beyond what is available today. However, liberating electrons into gas/vacuum in a practical microelectronic device is quite challenging. It often requires heating, applying high voltages, or using lasers with short wavelengths or high powers. Here, we show that the interaction between an engineered resonant surface and a low-power infrared laser can cause enough photoemission via electron tunnelling to implement feasible microelectronic devices such as transistors, switches and modulators. The proposed photoemission-based devices benefit from the advantages of gas-plasma/vacuum electronic devices while preserving the integrability of semiconductor-based devices. PMID:27811946

Microfluidic redox battery.

PubMed

Lee, Jin Wook; Goulet, Marc-Antoni; Kjeang, Erik

2013-07-07

A miniaturized microfluidic battery is proposed, which is the first membraneless redox battery demonstrated to date. This unique concept capitalizes on dual-pass flow-through porous electrodes combined with stratified, co-laminar flow to generate electrical power on-chip. The fluidic design is symmetric to allow for both charging and discharging operations in forward, reverse, and recirculation modes. The proof-of-concept device fabricated using low-cost materials integrated in a microfluidic chip is shown to produce competitive power levels when operated on a vanadium redox electrolyte. A complete charge/discharge cycle is performed to demonstrate its operation as a rechargeable battery, which is an important step towards providing sustainable power to lab-on-a-chip and microelectronic applications.

Single Event Transient Analysis of an SOI Operational Amplifier for Use in Low-Temperature Martian Exploration

NASA Technical Reports Server (NTRS)

Laird, Jamie S.; Scheik, Leif; Vizkelethy, Gyorgy; Mojarradi, Mohammad M; Chen, Yuan; Miyahira, Tetsuo; Blalock, Benjamin; Greenwell, Robert; Doyle, Barney

2006-01-01

The next generation of Martian rover#s to be launched by JPL are to examine polar regions where temperatures are extremely low and the absence of an earth-like atmosphere results in high levels of cosmic radiation at ground level. Cosmic rays lead to a plethora of radiation effects including Single Event Transients (SET) which can severely degrade microelectronic functionality. As such, a radiation-hardened, temperature compensated CMOS Single-On-Insulator (SOI) Operational Amplifier has been designed for JPL by the University of Tennessee and fabricated by Honeywell using the SOI V process. SOI technology has been shownto be far less sensitive to transient effects than both bulk and epilayer Si. Broad beam heavy-ion tests at the University of Texas A&M using Kr and Xebeams of energy 25MeV/amu were performed to ascertain the duration and severity of the SET for the op-amp configured for a low and high gain application. However, some ambiguity regarding the location of transient formation required the use of a focused MeV ion microbeam. A 36MeV O6(+) microbeam. the Sandia National Laboratory (SNL) was used to image and verify regions of particular concern. This is a viewgraph presentation

A High Frequency Active Voltage Doubler in Standard CMOS Using Offset-Controlled Comparators for Inductive Power Transmission

PubMed Central

Lee, Hyung-Min; Ghovanloo, Maysam

2014-01-01

In this paper, we present a fully integrated active voltage doubler in CMOS technology using offset-controlled high speed comparators for extending the range of inductive power transmission to implantable microelectronic devices (IMD) and radio-frequency identification (RFID) tags. This active voltage doubler provides considerably higher power conversion efficiency (PCE) and lower dropout voltage compared to its passive counterpart and requires lower input voltage than active rectifiers, leading to reliable and efficient operation with weakly coupled inductive links. The offset-controlled functions in the comparators compensate for turn-on and turn-off delays to not only maximize the forward charging current to the load but also minimize the back current, optimizing PCE in the high frequency (HF) band. We fabricated the active voltage doubler in a 0.5-μm 3M2P std. CMOS process, occupying 0.144 mm2 of chip area. With 1.46 V peak AC input at 13.56 MHz, the active voltage doubler provides 2.4 V DC output across a 1 kΩ load, achieving the highest PCE = 79% ever reported at this frequency. In addition, the built-in start-up circuit ensures a reliable operation at lower voltages. PMID:23853321

Mechanism for Plasma Etching of Shallow Trench Isolation Features in an Inductively Coupled Plasma

NASA Astrophysics Data System (ADS)

Agarwal, Ankur; Rauf, Shahid; He, Jim; Choi, Jinhan; Collins, Ken

2011-10-01

Plasma etching for microelectronics fabrication is facing extreme challenges as processes are developed for advanced technological nodes. As device sizes shrink, control of shallow trench isolation (STI) features become more important in both logic and memory devices. Halogen-based inductively coupled plasmas in a pressure range of 20-60 mTorr are typically used to etch STI features. The need for improved performance and shorter development cycles are placing greater emphasis on understanding the underlying mechanisms to meet process specifications. In this work, a surface mechanism for STI etch process will be discussed that couples a fundamental plasma model to experimental etch process measurements. This model utilizes ion/neutral fluxes and energy distributions calculated using the Hybrid Plasma Equipment Model. Experiments are for blanket Si wafers in a Cl2/HBr/O2/N2 plasma over a range of pressures, bias powers, and flow rates of feedstock gases. We found that kinetic treatment of electron transport was critical to achieve good agreement with experiments. The calibrated plasma model is then coupled to a string-based feature scale model to quantify the effect of varying process parameters on the etch profile. We found that the operating parameters strongly influence critical dimensions but have only a subtle impact on the etch depths.

Biomedical applications of NASA technology

NASA Technical Reports Server (NTRS)

Friedman, Donald S.

1991-01-01

Through the active transfer of technology, NASA Technology Utilization (TU) Program assists private companies, associations, and government agencies to make effective use of NASA's technological resources to improve U.S. economic competitiveness and to provide societal benefit. Aerospace technology from such areas as digital image processing, space medicine and biology, microelectronics, optics, and electro-optics, and ultrasonic imaging have found many secondary applications in medicine. Examples of technology spinoffs are briefly discussed to illustrate the benefits realized through adaptation of aerospace technology to solve health care problems. Successful implementation of new technologies increasingly requires the collaboration of industry, universities, and government and the TU Program serves as the liaison to establish such collaborations with NASA. NASA technology is an important resource to support the development of new medical products and techniques that will further advance the quality of health care available in the U.S. and worldwide.

Electron Technology: ELTE 2016

NASA Astrophysics Data System (ADS)

Pisarkiewicz, Tadeusz; Kucewicz, Wojciech

2016-12-01

In this paper we present a review of research results and technical accomplishments presented by researchers from technical universities, governmental institutes and research companies during the XIIth Scientific Conference Electron Technology, ELTE 2016. This review is based on materials presented at four topical conference sessions: Microelectronics and Nanoelectronics, Photonics, Materials and Technologies, and Microsystems and also on materials presented by invited speakers at two dedicated sessions. Oral sessions were accompanied by the poster sessions. In effect about 50 papers gathered in this volume reflect the topics discussed at the Conference. A short description of technological and measurement possibilities in the laboratories of Academic Centre for Materials and Nanotechnology and also in the Department of Electronics of the Faculty of Computer Science, Electronics and Telecommunications AGH UST are given.

Human factors technology for America's space program

NASA Technical Reports Server (NTRS)

Montemerlo, M. D.

1982-01-01

NASA is initiating a space human factors research and technology development program in October 1982. The impetus for this program stems from: the frequent and economical access to space provided by the Shuttle, the advances in control and display hardware/software made possible through the recent explosion in microelectronics technology, heightened interest in a space station, heightened interest by the military in space operations, and the fact that the technology for long duration stay times for man in space has received relatively little attention since the Apollo and Skylab missions. The rationale for and issues in the five thrusts of the new program are described. The main thrusts are: basic methodology, crew station design, ground control/operations, teleoperations and extra vehicular activity.

An Integrated Circuit for Chip-Based Analysis of Enzyme Kinetics and Metabolite Quantification.

PubMed

Cheah, Boon Chong; Macdonald, Alasdair Iain; Martin, Christopher; Streklas, Angelos J; Campbell, Gordon; Al-Rawhani, Mohammed A; Nemeth, Balazs; Grant, James P; Barrett, Michael P; Cumming, David R S

2016-06-01

We have created a novel chip-based diagnostic tools based upon quantification of metabolites using enzymes specific for their chemical conversion. Using this device we show for the first time that a solid-state circuit can be used to measure enzyme kinetics and calculate the Michaelis-Menten constant. Substrate concentration dependency of enzyme reaction rates is central to this aim. Ion-sensitive field effect transistors (ISFET) are excellent transducers for biosensing applications that are reliant upon enzyme assays, especially since they can be fabricated using mainstream microelectronics technology to ensure low unit cost, mass-manufacture, scaling to make many sensors and straightforward miniaturisation for use in point-of-care devices. Here, we describe an integrated ISFET array comprising 2(16) sensors. The device was fabricated with a complementary metal oxide semiconductor (CMOS) process. Unlike traditional CMOS ISFET sensors that use the Si3N4 passivation of the foundry for ion detection, the device reported here was processed with a layer of Ta2O5 that increased the detection sensitivity to 45 mV/pH unit at the sensor readout. The drift was reduced to 0.8 mV/hour with a linear pH response between pH 2-12. A high-speed instrumentation system capable of acquiring nearly 500 fps was developed to stream out the data. The device was then used to measure glucose concentration through the activity of hexokinase in the range of 0.05 mM-231 mM, encompassing glucose's physiological range in blood. Localised and temporal enzyme kinetics of hexokinase was studied in detail. These results present a roadmap towards a viable personal metabolome machine.

Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

NASA Astrophysics Data System (ADS)

Szelag, Bertrand; Abraham, Alexis; Brision, Stéphane; Gindre, Paul; Blampey, Benjamin; Myko, André; Olivier, Segolene; Kopp, Christophe

2017-05-01

Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances. In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive electro-optic characterization of these components will be presented.

Double-Wall Nanotubes and Graphene Nanoplatelets for Hybrid Conductive Adhesives with Enhanced Thermal and Electrical Conductivity.

PubMed

Messina, Elena; Leone, Nancy; Foti, Antonino; Di Marco, Gaetano; Riccucci, Cristina; Di Carlo, Gabriella; Di Maggio, Francesco; Cassata, Antonio; Gargano, Leonardo; D'Andrea, Cristiano; Fazio, Barbara; Maragò, Onofrio Maria; Robba, Benedetto; Vasi, Cirino; Ingo, Gabriel Maria; Gucciardi, Pietro Giuseppe

2016-09-07

Improving the electrical and thermal properties of conductive adhesives is essential for the fabrication of compact microelectronic and optoelectronic power devices. Here we report on the addition of a commercially available conductive resin with double-wall carbon nanotubes and graphene nanoplatelets that yields simultaneously improved thermal and electrical conductivity. Using isopropanol as a common solvent for the debundling of nanotubes, exfoliation of graphene, and dispersion of the carbon nanostructures in the epoxy resin, we obtain a nanostructured conducting adhesive with thermal conductivity of ∼12 W/mK and resistivity down to 30 μΩ cm at very small loadings (1% w/w for nanotubes and 0.01% w/w for graphene). The low filler content allows one to keep almost unchanged the glass-transition temperature, the viscosity, and the curing parameters. Die shear measurements show that the nanostructured resins fulfill the MIL-STD-883 requirements when bonding gold-metalized SMD components, even after repeated thermal cycling. The same procedure has been validated on a high-conductivity resin characterized by a higher viscosity, on which we have doubled the thermal conductivity and quadrupled the electrical conductivity. Graphene yields better performances with respect to nanotubes in terms of conductivity and filler quantity needed to improve the resin. We have finally applied the nanostructured resins to bond GaN-based high-electron-mobility transistors in power-amplifier circuits. We observe a decrease of the GaN peak and average temperatures of, respectively, ∼30 °C and ∼10 °C, with respect to the pristine resin. The obtained results are important for the fabrication of advanced packaging materials in power electronic and microwave applications and fit the technological roadmap for CNTs, graphene, and hybrid systems.

Deep Space 1: Testing New Technologies for Future Small Bodies Missions

NASA Technical Reports Server (NTRS)

Rayman, Marc D.

2001-01-01

Launched on October 24, 1998, Deep Space 1 (DS1) was the first mission of NASA's New Millennium Program, chartered to validate in space high-risk, new technologies important for future space science programs. The advanced technology payload that was tested on DS1 comprises solar electric propulsion, solar concentrator arrays, autonomous on-board navigation and other autonomous systems, several telecommunications and microelectronics devices, and two low-mass integrated science instrument packages. The mission met or exceeded all of its success criteria. The 12 technologies were rigorously exercised so that subsequent flight projects would not have to incur the cost and risk of being the fist users of these new capabilities. Examples of the benefits to future small body missions from DS1's technologies will be described.

Design, fabrication, and characterization of 4H-silicon carbide rectifiers for power switching applications

NASA Astrophysics Data System (ADS)

Sheridan, David Charles

Silicon Carbide has received a substantial increase in research interest over the past few years as a base material system for high-frequency and high-power semiconductor devices. Of the over 1200 polytypes, 4H-SiC is the most attractive polytype for power devices due to its wide band gap (3.2eV), excellent thermal conductivity (4.9 W/cm·K), and high critical field strength (˜2 x 106 V/cm). Important for power devices, the 10x increase in critical field strength of SiC allows high voltage blocking layers to be fabricated significantly thinner than for comparable Si devices. For power rectifiers, this reduces device on-resistance, while maintaining the same high voltage blocking capability. In this work, 4H-SiC Schottky, pn, and junction barrier Schottky (JBS) rectifiers for use in high voltage switching applications have been designed, fabricated, and extensively characterized. First, a detailed review of 4H-SiC material parameters was performed and SiC models were implemented into a standard Si drift-diffusion numerical simulator. Using these models, a SiC simulation methodology was developed in order to enable predictive SiC device design. A wide variety of rectifier and edge termination designs were investigated and optimized with respect to breakdown efficiency, area consumption, resistance to interface charge, and fabrication practicality. Simulated termination methods include: field plates, floating guard rings, and a variety of junction termination extensions (JTE). Using the device simulation results, both Schottky and JBS rectifiers were fabricated with a novel self-aligned edge termination design, and fabricated with process elements developed at the Alabama Microelectronics Science and Technology Center facility. These rectifiers exhibited near-ideal forward characteristics and had blocking voltages in excess of 2.5kV. The SiC diodes were subjected to inductive switching tests, and were found to have superior reverse recovery characteristics compared to a similar Si diode. Finally, the performance of these SiC rectifiers were tested in inductive switching circuits and in high dose gamma radiation environments. In both cases, these devices were shown to be superior to their silicon counterparts. The details of this work was presented and published in the proceedings of the 45th International Meeting of the American Vacuum Society [1], the 1999 International Conference on Silicon Carbide and Related Materials [2, 3] and the 2000 European Conference on Silicon Carbide and Related Materials [4]. The expanded conference papers were published in the international journal. Solid-State Electronics [5, 6].

Proceedings of the International Conference on Integrated Micro/Nanotechnology for Space Applications

NASA Technical Reports Server (NTRS)

1995-01-01

The recent evolution of microelectronic technologies coupled with the growth of micro-electro-mechanical systems (MEMS) has had significant impact in the commercial sector. The focus of this conference was to anticipate and extend the incorporation of nano-electronics and MEMS into application specific integrated microinstruments (ASIM's) in space systems. Presentations ranged from mission application of nano-satellites to silicon micromachining for photonic applications.

The RACE (R&D in Advanced Communications Technologies for Europe) Program of the European Communities

DTIC Science & Technology

1988-08-17

asynchronous TDM for all channels; and hybrid solu- However, since technoeconomic considerations may im- tions, possibly involving dynamic rearranging. A...qualitative electronic switching are favored: CMOS, silicon bipolar, analysis , under the headings: timing of introduction, net- and gallium arsenide...or ring configurations. tem requirements. Project 1029. In this project an up-to-date analysis Microelectronic Components was made of the state of the

Vision Technology for Automated Inspection of Hybrid Microelectronics Assemblies

DTIC Science & Technology

1988-06-01

circuits are a very efficient packaging technique, with the primary advantages of size, better resistance to environ - 0 ments, and the flexibility to...produced for the military are much more complex and have more stringent performance requirements, particularly in their resistance to environments and...boards, particularly because of the need to protect circuits from a hostile environment such as salt, heat, and moisture. Included among the major U.S

Impact of Spacecraft Shielding on Direct Ionization Soft Error Rates for sub-130 nm Technologies

NASA Technical Reports Server (NTRS)

Pellish, Jonathan A.; Xapsos, Michael A.; Stauffer, Craig A.; Jordan, Michael M.; Sanders, Anthony B.; Ladbury, Raymond L.; Oldham, Timothy R.; Marshall, Paul W.; Heidel, David F.; Rodbell, Kenneth P.

2010-01-01

We use ray tracing software to model various levels of spacecraft shielding complexity and energy deposition pulse height analysis to study how it affects the direct ionization soft error rate of microelectronic components in space. The analysis incorporates the galactic cosmic ray background, trapped proton, and solar heavy ion environments as well as the October 1989 and July 2000 solar particle events.

Impact of Spacecraft Shielding on Direct Ionization Soft Error Rates for Sub-130 nm Technologies

NASA Technical Reports Server (NTRS)

Pellish, Jonathan A.; Xapsos, Michael A.; Stauffer, Craig A.; Jordan, Thomas M.; Sanders, Anthony B.; Ladbury, Raymond L.; Oldham, Timothy R.; Marshall, Paul W.; Heidel, David F.; Rodbell, Kenneth P.

2010-01-01

We use ray tracing software to model various levels of spacecraft shielding complexity and energy deposition pulse height analysis to study how it affects the direct ionization soft error rate of microelectronic components in space. The analysis incorporates the galactic cosmic ray background, trapped proton, and solar heavy ion environments as well as the October 1989 and July 2000 solar particle events.

Vacuum microelectronics for beam power and rectennas

NASA Technical Reports Server (NTRS)

Gray, Henry F.

1989-01-01

Vacuum Microelectronic devices can be described as vacuum transistors or micro-miniature vacuum tubes, as one chooses. The fundamental reason behind this new technology is the very large current densities available from field emitters, namely as high as 10(8) A/sq cm. Array current densities as high as 1000 A/sq cm have been measured. Total electron transit times from source to drain for 1 micron feature size devices have been predicted to be about 150fs. This very short transit time implies the possibility of submillimeter wave transmitters and rectennas in devices which can operate with reasonably high voltages and which are small in size and are lightweight. In addition, they are expected to be extremely radiation hard and very temperature insensitive. That is, they are expected to have radiation hardness characteristics similar to vacuum tubes, and both the high temperature and low temperature limits should be determined by the package. That is, there should be no practical intrinsic temperature or carrier freezeout problems for devices based on metals or composites. But the technology is difficult to implement at the present time because it is based on 300 to 500 angstrom radius field emitters which must be relatively uniform. There is also the need to understand the non-equilibrium transport physics in the near-surface regions of the field emitters.

Analysis of LDLR mutations in familial hypercholesterolemia patients in Greece by use of the NanoChip microelectronic array technology.

PubMed

Laios, Eleftheria; Drogari, Euridiki

2006-12-01

Three mutations in the low density lipoprotein receptor (LDLR) gene account for 49% of familial hypercholesterolemia (FH) cases in Greece. We used the microelectronic array technology of the NanoChip Molecular Biology Workstation to develop a multiplex method to analyze these single-nucleotide polymorphisms (SNPs). Primer pairs amplified the region encompassing each SNP. The biotinylated PCR amplicon was electronically addressed to streptavidin-coated microarray sites. Allele-specific fluorescently labeled oligonucleotide reporters were designed and used for detection of wild-type and SNP sequences. Genotypes were compared to PCR-restriction fragment length polymorphism (PCR-RFLP). We developed three monoplex assays (1 SNP/site) and an optimized multiplex assay (3SNPs/site). We performed 92 Greece II, 100 Genoa, and 98 Afrikaner-2 NanoChip monoplex assays (addressed to duplicate sites and analyzed separately). Of the 580 monoplex genotypings (290 samples), 579 agreed with RFLP. Duplicate sites of one sample were not in agreement with each other. Of the 580 multiplex genotypings, 576 agreed with the monoplex results. Duplicate sites of three samples were not in agreement with each other, indicating requirement for repetition upon which discrepancies were resolved. The multiplex assay detects common LDLR mutations in Greek FH patients and can be extended to accommodate additional mutations.

Trusted Defense Microelectronics: Future Access and Capabilities Are Uncertain

DTIC Science & Technology

2015-10-28

Board Task Force on High Performance Microchip Supply and documentation and discussions with industry and DOD officials in September and October...the defense and microelectronics industry . DOD’s review of this report deemed some of this information as sensitive but unclassified. What GAO...increased specialization and industry consolidation. • Once dominated by domestic sources, the supply chain for microelectronics manufacturing is a global one

NASA spinoffs to bioengineering and medicine

NASA Technical Reports Server (NTRS)

Rouse, D. J.; Winfield, D. L.; Canada, S. C.

1991-01-01

Through the active transfer of technology, the National Aeronautics and Space Administration (NASA) Technology Utilization (TU) Program assists private companies, associations, and government agencies to make effective use of NASA's technological resources to improve U.S. economic competitiveness and to provide societal benefit. Aerospace technology from areas such as digital image processing, space medicine and biology, microelectronics, optics and electrooptics, and ultrasonic imaging have found many secondary applications in medicine. Examples of technology spinoffs are briefly discussed to illustrate the benefits realized through adaptation of aerospace technology to solve health care problems. Successful implementation of new technologies increasingly requires the collaboration of industry, universities, and government, and the TU Program serves as the liaison to establish such collaborations with NASA. NASA technology is an important resource to support the development of new medical products and techniques that will further advance the quality of health care available in the U.S. and worldwide.

Methodology of problem-based learning engineering and technology and of its implementation with modern computer resources

NASA Astrophysics Data System (ADS)

Lebedev, A. A.; Ivanova, E. G.; Komleva, V. A.; Klokov, N. M.; Komlev, A. A.

2017-01-01

The considered method of learning the basics of microelectronic circuits and systems amplifier enables one to understand electrical processes deeper, to understand the relationship between static and dynamic characteristics and, finally, bring the learning process to the cognitive process. The scheme of problem-based learning can be represented by the following sequence of procedures: the contradiction is perceived and revealed; the cognitive motivation is provided by creating a problematic situation (the mental state of the student), moving the desire to solve the problem, to raise the question "why?", the hypothesis is made; searches for solutions are implemented; the answer is looked for. Due to the complexity of architectural schemes in the work the modern methods of computer analysis and synthesis are considered in the work. Examples of engineering by students in the framework of students' scientific and research work of analog circuits with improved performance based on standard software and software developed at the Department of Microelectronics MEPhI.

Advanced optical modeling of TiN metal hard mask for scatterometric critical dimension metrology

NASA Astrophysics Data System (ADS)

Ebersbach, Peter; Urbanowicz, Adam M.; Likhachev, Dmitriy; Hartig, Carsten

2017-03-01

The majority of scatterometric production control models assume constant optical properties of the materials and only dimensional parameters are allowed to vary. However, this assumption, especially in case of thin-metal films, negatively impacts model precision and accuracy. In this work we focus on optical modeling of the TiN metal hardmask for scatterometry applications. Since the dielectric function of TiN exhibits thickness dependence, we had to take this fact into account. Moreover, presence of the highly absorbing films influences extracted thicknesses of dielectric layers underneath the metal films. The later phenomenon is often not reflected by goodness of fit. We show that accurate optical modeling of metal is essential to achieve desired scatterometric model quality for automatic process control in microelectronic production. Presented modeling methodology can be applied to other TiN applications such as diffusion barriers and metal gates as well as for other metals used in microelectronic manufacturing for all technology nodes.

Marketing NASA Langley Polymeric Materials

NASA Technical Reports Server (NTRS)

Flynn, Diane M.

1995-01-01

A marketing tool was created to expand the knowledge of LaRC developed polymeric materials, in order to facilitate the technology transfer process and increase technology commercialization awareness among a non-technical audience. The created brochure features four materials, LaRC-CP, LaRC-RP46, LaRC-SI, and LaRC-IA, and highlights their competitive strengths in potential commercial applications. Excellent opportunities exist in the $40 million per year microelectronics market and the $6 billion adhesives market. It is hoped that the created brochure will generate inquiries regarding the use of the above materials in markets such as these.

NASA Electronic Parts and Packaging (NEPP) Program

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Sampson, Michael J.

2008-01-01

This viewgraph presentation reviews NASA's Electronic Parts and Packaging (NEPP) Program. The NEPP mission is to provide guidance to NASA for the selection and and application of microelectronics technologies, to improve understanding of the risks related to the use of these technologies in the space environment and to ensure that appropriate research is performed to meet NASA mission needs. The NEPP Program focuses on the reliability aspects of electronic devices. Three principal aspects to this reliability: (1) lifetime, (2) effects of space radiation and the space environment, and (3) creation and maintenance of the assurance support infrastructure required for success.

The NASA Electronic Parts and Packaging (NEPP) Program: Results and Direction

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.

2007-01-01

The NASA Electronic Parts and Packaging (NEPP) Program's mission is to provide guidance to NASA for the selection and application of microelectronic technologies, to improve understanding of the risks related to the use of these technologies in the space environment and to ensure that appropriate research is performed to meet NASA mission assurance needs. This viewgraph presentation reviews the NEPP program's goals and objectives, and reviews many of the missions that the NEPP program has impacted, both in and out of NASA. Also included are examples of the evaluation that the program performed.

Impact of Device Scaling on Deep Sub-micron Transistor Reliability: A Study of Reliability Trends using SRAM

NASA Technical Reports Server (NTRS)

White, Mark; Huang, Bing; Qin, Jin; Gur, Zvi; Talmor, Michael; Chen, Yuan; Heidecker, Jason; Nguyen, Duc; Bernstein, Joseph

2005-01-01

As microelectronics are scaled in to the deep sub-micron regime, users of advanced technology CMOS, particularly in high-reliability applications, should reassess how scaling effects impact long-term reliability. An experimental based reliability study of industrial grade SRAMs, consisting of three different technology nodes, is proposed to substantiate current acceleration models for temperature and voltage life-stress relationships. This reliability study utilizes step-stress techniques to evaluate memory technologies (0.25mum, 0.15mum, and 0.13mum) embedded in many of today's high-reliability space/aerospace applications. Two acceleration modeling approaches are presented to relate experimental FIT calculations to Mfr's qualification data.

The Co-60 gamma-ray irradiation effects on the Al/HfSiO4/p-Si/Al MOS capacitors

NASA Astrophysics Data System (ADS)

Lok, R.; Kaya, S.; Karacali, H.; Yilmaz, E.

2017-12-01

In this work, the initial interface trap density (Nit) to examine device compability for microelectronics and then the Co-60 gamma irradiation responses of Al/HfSiO4/p-Si/Al (MOS) capacitors were investigated in various dose ranges up to 70 Gy. Pre-irradiation response of the devices was evaluated from high frequency (HF) and low frequency (LF) capacitance method and the Nit was calculated as 9.91 × 1011 cm-2 which shows that the HfSiO4/p-Si interface quality is convenient for microelectronics applications. The irradiation responses of the devices were carried out from flat-band and mid-gap voltage shifts obtained from stretch of capacitance characteristics prior to and after irradiation. The results show that the flat band voltages very slightly shifted to positive voltage values demonstrating the enhancement of negative charge trapping in device structure. The sensitivity of the Al/HfSiO4/p-Si/Al MOS capacitors was found to be 4.41 mV/Gy for 300 nm-thick HfSiO4 gate dielectrics. This value approximately 6.5 times smaller compared to the same thickness conventional SiO2 based MOS devices. Therefore, HfSiO4 exhibits crucial irradiation tolerance in gamma irradiation environment. Consequently, HfSiO4 dielectrics may have significant usage for microelectronic technology as a radiation hard material where radiation field exists such as in space applications.

Protection of microelectronic devices during packaging

DOEpatents

Peterson, Kenneth A.; Conley, William R.

2002-01-01

The present invention relates to a method of protecting a microelectronic device during device packaging, including the steps of applying a water-insoluble, protective coating to a sensitive area on the device; performing at least one packaging step; and then substantially removing the protective coating, preferably by dry plasma etching. The sensitive area can include a released MEMS element. The microelectronic device can be disposed on a wafer. The protective coating can be a vacuum vapor-deposited parylene polymer, silicon nitride, metal (e.g. aluminum or tungsten), a vapor deposited organic material, cynoacrylate, a carbon film, a self-assembled monolayered material, perfluoropolyether, hexamethyldisilazane, or perfluorodecanoic carboxylic acid, silicon dioxide, silicate glass, or combinations thereof. The present invention also relates to a method of packaging a microelectronic device, including: providing a microelectronic device having a sensitive area; applying a water-insoluble, protective coating to the sensitive area; providing a package; attaching the device to the package; electrically interconnecting the device to the package; and substantially removing the protective coating from the sensitive area.

Temporary coatings for protection of microelectronic devices during packaging

DOEpatents

Peterson, Kenneth A.; Conley, William R.

2005-01-18

The present invention relates to a method of protecting a microelectronic device during device packaging, including the steps of applying a water-insoluble, temporary protective coating to a sensitive area on the device; performing at least one packaging step; and then substantially removing the protective coating, preferably by dry plasma etching. The sensitive area can include a released MEMS element. The microelectronic device can be disposed on a wafer. The protective coating can be a vacuum vapor-deposited parylene polymer, silicon nitride, metal (e.g. aluminum or tungsten), a vapor deposited organic material, cynoacrylate, a carbon film, a self-assembled monolayered material, perfluoropolyether, hexamethyldisilazane, or perfluorodecanoic carboxylic acid, silicon dioxide, silicate glass, or combinations thereof. The present invention also relates to a method of packaging a microelectronic device, including: providing a microelectronic device having a sensitive area; applying a water-insoluble, protective coating to the sensitive area; providing a package; attaching the device to the package; electrically interconnecting the device to the package; and substantially removing the protective coating from the sensitive area.

Preliminary investigation of polystyrene/MoS{sub 2}-Oleylamine polymer composite for potential application as low-dielectric material in microelectronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Landi, Giovanni, E-mail: glandi@unisa.it; Department of Industrial Engineering, University of Salerno, Via G. Paolo II 132, 84084 Fisciano; Altavilla, Claudia

2015-12-17

Insulating materials play a vital role in the design and performance of electrical systems for both steady and transient state conditions. Among the other properties, also in this field, polymer nanocomposites promise to offer exciting improvements. Many studies in the last decade has witnessed significant developments in the area of nano-dielectric materials and significant effects of nano-scale fillers on electric, thermal and mechanical properties of polymeric materials have been observed. However, the developments of new and advanced materials to be used the miniaturization of electronic devices fabrication require extensive studies on electrical insulation characteristics of these materials before they canmore » be used in commercial systems. In this work, Polystyrene (PS) composites were prepared by the blend solution method using MoS{sub 2}@Oleylamine nanosheets as filler. The dielectric properties of the resulting comoposite have been investigated at 300K and in the frequency range between 1000 Hz and 1 MHz. The addition of the MoS{sub 2}@Oleylamine nanosheets leads to a decreasing of the relative dielectric constant and of the electrical conductivity measured in the voltage range between ±500V. Thanks to a possibility to tune the electrical permittivity with the control of MoS{sub 2} concentration, these materials could be used as a low-dielectric material in the microelectronics applications.« less

Dual Mode Thin Film Bulk Acoustic Resonators (FBARs) Based on AlN, ZnO and GaN Films with Tilted c-Axis Orientation

DTIC Science & Technology

2010-01-01

TERMS MEMS , acoustic wave devices, acoustic wave sensors Qing-Ming Wang University of Pittsburgh 123 University Place University Club Pittsburgh, PA...resonators,” Proc. SPIE Vol. 6223, 62230I, Micro ( MEMS ) and Nanotechnologies for Space Applications; Thomas George, Zhong-Yang Cheng; Eds. (May...microelectromechanical resonators has been recognized as a technological challenge in the current microelectronics and MEMS development. The

Metallurgical coatings and thin films; Proceedings of the International Conference, 18th, San Diego, CA, Apr. 22-26, 1991. Vols. 1 & 2

NASA Technical Reports Server (NTRS)

Mcguire, Gary E. (Editor); Mcintyre, Dale C. (Editor); Hofmann, Siegfried (Editor)

1991-01-01

A conference on metallurgical coatings and thin films produced papers in the areas of coatings for use at high temperatures; hard coatings and deposition technologies; diamonds and related materials; tribological coatings/surface modifications; thin films for microelectronics and high temperature superconductors; optical coatings, film characterization, magneto-optics, and guided waves; and methods for characterizing films and modified surfaces.

Electric Field Control of Magnetism Using BiFeO3-Based Heterostructures

DTIC Science & Technology

2014-04-22

dissipation in the form of heat has become a center stage issue for the microelectronics industry. By taking advantage of the strong correlations...speed and storage density, significant energy dissipation in the form of heat has become a center stage issue for the microelectronics industry. By...and storage density, significant energy dissipation in the form of heat has become a center stage issue for the microelectronics industry. By taking

Calculation of the figure of merit for carbon nanotubes based devices

NASA Astrophysics Data System (ADS)

Vaseashta, Ashok

2004-03-01

The dimensionality of a system has a profound influence on its physical behavior. With advances in technology over the past few decades, it has become possible to fabricate and study reduced-dimensional systems in which electrons are strongly confined in one or more dimensions. In the case of 1-D electron systems, most of the results, such as conductance quantization, have been explained in terms of non-interacting electrons. In contrast to the cases of 2D and 3D systems, the question of what roles electron-electron interactions play in real 1-D systems has been difficult to address, because of the difficulty in obtaining long, relatively disorder free 1-D wires. Since their first discovery and fabrication in 1991, carbon nanotubes (CNTs) have received considerable attention because of the prospect of new fundamental science and many potential applications. Hence, it has been possible to conduct studies of the electrons in 1-D. Carbon nanotubes are of considerable technological importance due to their excellent mechanical, electrical, and chemical characteristics. The potential technological applications include electronics, opto-electronics and biomedical sensors. The applications of carbon nanotubes include quantum wire interconnects, diodes and transistors for computing, capacitors, data storage devices, field emitters, flat panel displays and terahertz oscillators. One of the most remarkable characteristics is the possibility of bandgap engineering by controlling the microstructure. Hence, a pentagon-heptagon defect in the hexagonal network can connect a metallic to a semiconductor nanotube, providing an Angstrom-scale hetero-junction with a device density approximately 10^4 times greater than present day microelectronics. Also, successfully contacted carbon nanotubes have exhibited a large number of useful quantum electronic and low dimensional transport phenomena, such as true quantum wire behaviors, room temperature field effect transistors, room temperature single electron transistors, Luttinger-liquid behavior, the Aharonov Bohm effect, and Fabry-Perot interference effects. Hence it is evident that CNT can be used for a variety of applications. To use CNT based devices, it is critical to know the relative advantage of using CNTs over other known electronic materials. The figure of merit for CNT based devices is not reported so far. It is the objective of this investigation to calculate the figure of merit and present such results. Such calculations will enable researchers to focus their research for specific device designs where CNT based devices show a marked improvement over conventional semiconductor devices.

Micromachined ultrasound transducers with improved coupling factors from a CMOS compatible process

PubMed

Eccardt; Niederer

2000-03-01

For medical high frequency acoustic imaging purposes the reduction in size of a single transducer element for one-dimensional and even more for two-dimensional arrays is more and more limited by fabrication and cabling technology. In the fields of industrial distance measurement and simple object recognition low cost phased arrays are lacking. Both problems can be solved with micromachined ultrasound transducers (MUTs). A single transducer is made of a large number of microscopic elements. Because of the array structure of these transducers, groups of elements can be built up and used as a phased array. By integrating parts of the sensor electronics on chip, the cabling effort for arrays can be reduced markedly. In contrast to standard ultrasonic technology, which is based on massive thickness resonators, vibrating membranes are the radiating elements of the MUTs. New micromachining technologies have emerged, allowing a highly reproducible fabrication of electrostatically driven membranes with gap heights below 500 nm. A microelectronic BiCMOS process was extended for surface micromechanics (T. Scheiter et al., Proceedings 11th European Conference on Solid-State Transducers, Warsaw, Vol. 3, 1997, pp. 1595-1598). Additional process steps were included for the realization of the membranes which form sealed cavities with the underlying substrate. Membrane and substrate are the opposite electrodes of a capacitive transducer. The transducers can be integrated monolithically on one chip together with the driving, preamplifying and multiplexing circuitry, thus reducing parasitic capacities and noise level significantly. Owing to their low mass the transducers are very well matched to fluid loads, resulting in a very high bandwidth of 50-100% (C. Eccardt et al., Proceedings Ultrasonics Symposium, San Antonio, Vol. 2, 1996, pp. 959-962; P.C. Eccardt et al., Proceedings of the 1997 Ultrasonics Symposium, Toronto, Vol. 2, 1997, pp. 1609-1618). In the following it is shown how the BiCMOS process has been modified to meet the demands for ultrasound generation and reception. Bias and driving voltages have been reduced down to the 10 V range. The electromechanical coupling is now almost comparable with that for piezoelectric transducers. The measurements exhibit sound pressures and bandwidths that are at least comparable with those of conventional piezoelectric transducer arrays.

Organo-metallic elements for associative information processing

NASA Astrophysics Data System (ADS)

Potember, Richard S.; Poehler, Theodore O.

1989-01-01

In the three years of the program we have: (1) built and tested a 4 bit element matrix device for possible use in high density content-addressable memories systems; (2) established a test and evaluation laboratory to examine optical materials for nonlinear effects, saturable absorption, harmonic generation and photochromism; (3) successfully designed, constructed and operated a codeposition processing system that enables organic materials to be deposited on a variety of substrates to produce optical grade coatings and films. This system is also compatible with other traditional microelectronic techniques; (4) used the sol-gel process with colloidal AgTCNQ to fabricate high speed photochromic switches; (5) develop and applied for patent coverage to make VO2 optical switching materials via the sol-gel processing using vanadium (IV) alkoxide compounds.

Metal nanoparticle film-based room temperature Coulomb transistor.

PubMed

Willing, Svenja; Lehmann, Hauke; Volkmann, Mirjam; Klinke, Christian

2017-07-01

Single-electron transistors would represent an approach to developing less power-consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations.

Development of a templated approach to fabricate diamond patterns on various substrates.

PubMed

Shimoni, Olga; Cervenka, Jiri; Karle, Timothy J; Fox, Kate; Gibson, Brant C; Tomljenovic-Hanic, Snjezana; Greentree, Andrew D; Prawer, Steven

2014-06-11

We demonstrate a robust templated approach to pattern thin films of chemical vapor deposited nanocrystalline diamond grown from monodispersed nanodiamond (mdND) seeds. The method works on a range of substrates, and we herein demonstrate the method using silicon, aluminum nitride (AlN), and sapphire substrates. Patterns are defined using photo- and e-beam lithography, which are seeded with mdND colloids and subsequently introduced into microwave assisted chemical vapor deposition reactor to grow patterned nanocrystalline diamond films. In this study, we investigate various factors that affect the selective seeding of different substrates to create high quality diamond thin films, including mdND surface termination, zeta potential, surface treatment, and plasma cleaning. Although the electrostatic interaction between mdND colloids and substrates is the main process driving adherence, we found that chemical reaction (esterification) or hydrogen bonding can potentially dominate the seeding process. Leveraging the knowledge on these different interactions, we optimize fabrication protocols to eliminate unwanted diamond nucleation outside the patterned areas. Furthermore, we have achieved the deposition of patterned diamond films and arrays over a range of feature sizes. This study contributes to a comprehensive understanding of the mdND-substrate interaction that will enable the fabrication of integrated nanocrystalline diamond thin films for microelectronics, sensors, and tissue culturing applications.

Fabrication of highly sensitive and selective H₂ gas sensor based on SnO₂ thin film sensitized with microsized Pd islands.

PubMed

Nguyen, Van Toan; Nguyen, Viet Chien; Nguyen, Van Duy; Hoang, Si Hong; Hugo, Nguyen; Nguyen, Duc Hoa; Nguyen, Van Hieu

2016-01-15

Ultrasensitive and selective hydrogen gas sensor is vital component in safe use of hydrogen that requires a detection and alarm of leakage. Herein, we fabricated a H2 sensing devices by adopting a simple design of planar-type structure sensor in which the heater, electrode, and sensing layer were patterned on the front side of a silicon wafer. The SnO2 thin film-based sensors that were sensitized with microsized Pd islands were fabricated at a wafer-scale by using a sputtering system combined with micro-electronic techniques. The thicknesses of SnO2 thin film and microsized Pd islands were optimized to maximize the sensing performance of the devices. The optimized sensor could be used for monitoring hydrogen gas at low concentrations of 25-250 ppm, with a linear dependence to H2 concentration and a fast response and recovery time. The sensor also showed excellent selectivity for monitoring H2 among other gases, such as CO, NH3, and LPG, and satisfactory characteristics for ensuring safety in handling hydrogen. The hydrogen sensing characteristics of the sensors sensitized with Pt and Au islands were also studied to clarify the sensing mechanisms. Copyright © 2015 Elsevier B.V. All rights reserved.

Reproductive Hazards Still Persist in the Microelectronics Industry: Increased Risk of Spontaneous Abortion and Menstrual Aberration among Female Workers in the Microelectronics Industry in South Korea.

PubMed

Kim, Inah; Kim, Myoung-Hee; Lim, Sinye

2015-01-01

Despite the global expansion of supply chains and changes to the production process, few studies since the mid-1990 s and 2000s have examined reproductive risks of the microelectronics industry; we examined the reproductive risks among female microelectronics workers in South Korea. Based on claim data from the National Health Insurance (2008-2012), we estimated age-specific rates of spontaneous abortion (SAB) and menstrual aberration (MA) among women aged 20 to 39 years. We compared data between microelectronics workers and three different control groups: economically inactive women, the working population as a whole, and workers employed in the bank industry. For an effect measure, age-stratified relative risks (RRs) were estimated. Female workers in the microelectronics industry showed significantly higher risk for SAB and MA compared to control groups. The RRs for SAB with reference to economically inactive women, working population, and bank workers in their twenties were 1.57, 1.40, and 1.37, respectively, and the RRs for MA among females in their twenties were 1.54, 1.38, and 1.48, respectively. For women in their thirties, RRs for SAB were 1.58, 1.67, and 1.13, and those for MA were 1.25, 1.35, and 1.23 compared to the three control populations, respectively. All RRs were statistically significant at a level of 0.05, except for the SAB case comparison with bank workers in their thirties. Despite technical innovations and health and safety measures, female workers in microelectronics industry in South Korea have high rates of SAB and MA, suggesting continued exposure to reproductive hazards. Further etiologic studies based on primary data collection and careful surveillance are required to confirm these results.

New computing systems, future computing environment, and their implications on structural analysis and design

NASA Technical Reports Server (NTRS)

Noor, Ahmed K.; Housner, Jerrold M.

1993-01-01

Recent advances in computer technology that are likely to impact structural analysis and design of flight vehicles are reviewed. A brief summary is given of the advances in microelectronics, networking technologies, and in the user-interface hardware and software. The major features of new and projected computing systems, including high performance computers, parallel processing machines, and small systems, are described. Advances in programming environments, numerical algorithms, and computational strategies for new computing systems are reviewed. The impact of the advances in computer technology on structural analysis and the design of flight vehicles is described. A scenario for future computing paradigms is presented, and the near-term needs in the computational structures area are outlined.

Multilayered Microelectronic Device Package With An Integral Window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2004-10-26

A microelectronic package with an integral window mounted in a recessed lip for housing a microelectronic device. The device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can be formed of a low temperature co-fired ceramic (LTCC) or high temperature cofired ceramic (HTCC) multilayered material, with the integral window being simultaneously joined (e.g. co-fired) to the package body during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded and oriented so that a light-sensitive side is optically accessible through the window. The result is a compact, low profile package, having an integral window mounted in a recessed lip, that can be hermetically sealed.

Electron beam patterning for writing of positively charged gold colloidal nanoparticles

NASA Astrophysics Data System (ADS)

Zafri, Hadar; Azougi, Jonathan; Girshevitz, Olga; Zalevsky, Zeev; Zitoun, David

2018-02-01

Synthesis at the nanoscale has progressed at a very fast pace during the last decades. The main challenge today lies in precise localization to achieve efficient nanofabrication of devices. In the present work, we report on a novel method for the patterning of gold metallic nanoparticles into nanostructures on a silicon-on-insulator (SOI) wafer. The fabrication makes use of relatively accessible equipment, a scanning electron microscope (SEM), and wet chemical synthesis. The electron beam implants electrons into the insulating material, which further anchors the positively charged Au nanoparticles by electrostatic attraction. The novel fabrication method was applied to several substrates useful in microelectronics to add plasmonic particles. The resolution and surface density of the deposition were tuned, respectively, by the electron energy (acceleration voltage) and the dose of electronic irradiation. We easily achieved the smallest written feature of 68 ± 18 nm on SOI, and the technique can be extended to any positively charged nanoparticles, while the resolution is in principle limited by the particle size distribution and the scattering of the electrons in the substrate. [Figure not available: see fulltext.

MOEMs-based new functionalities for future instrumentation in space

NASA Astrophysics Data System (ADS)

Zamkotsian, Frédéric; Liotard, Arnaud; Viard, Thierry; Costes, Vincent; Hébert, Philippe-Jean; Hinglais, Emmanuel; Villenave, Michel

2017-11-01

Micro-Opto-Electro-Mechanical Systems (MOEMS) could be key components in future generation of space instruments. In Earth Observation, Universe Observation and Planet Exploration, scientific return of the instruments must be optimized in future missions. MOEMS devices are based on the mature micro-electronics technology and in addition to their compactness, scalability, and specific task customization, they could generate new functions not available with current technologies. CNES has initiated a study with LAM and TAS for listing the new functions associated with several types of MEMS (programmable slits, programmable micro-diffraction gratings, micro-deformable mirrors). Instrumental applications are then derived and promising concepts are described.

Embedded CMOS basecalling for nanopore DNA sequencing.

PubMed

Chengjie Wang; Junli Zheng; Magierowski, Sebastian; Ghafar-Zadeh, Ebrahim

2016-08-01

DNA sequencing based on nanopore sensors is now entering the marketplace. The ability to interface this technology to established CMOS microelectronics promises significant improvements in functionality and miniaturization. Among the key functions to benefit from this interface will be basecalling, the conversion of raw electronic molecular signatures to nucleotide sequence predictions. This paper presents the design and performance potential of custom CMOS base-callers embedded alongside nanopore sensors. A basecalliing architecture implemented in 32-nm technology is discussed with the ability to process the equivalent of 20 human genomes per day in real-time at a power density of 5 W/cm2 assuming a 3-mer nanopore sensor.

The Strength of the Metal. Aluminum Oxide Interface

NASA Technical Reports Server (NTRS)

Pepper, S. V.

1984-01-01

The strength of the interface between metals and aluminum oxide is an important factor in the successful operation of devices found throughout modern technology. One finds the interface in machine tools, jet engines, and microelectronic integrated circuits. The strength of the interface, however, should be strong or weak depending on the application. The diverse technological demands have led to some general ideas concerning the origin of the interfacial strength, and have stimulated fundamental research on the problem. Present status of our understanding of the source of the strength of the metal - aluminum oxide interface in terms of interatomic bonds are reviewed. Some future directions for research are suggested.

Programmable wide field spectrograph for earth observation

NASA Astrophysics Data System (ADS)

Zamkotsian, Frédéric; Lanzoni, Patrick; Liotard, Arnaud; Viard, Thierry; Costes, Vincent; Hébert, Philippe-Jean

2017-11-01

In Earth Observation, Universe Observation and Planet Exploration, scientific return of the instruments must be optimized in future missions. Micro-Opto-Electro-Mechanical Systems (MOEMS) could be key components in future generation of space instruments. These devices are based on the mature micro-electronics technology and in addition to their compactness, scalability, and specific task customization, they could generate new functions not available with current technologies. French and European space agencies, the Centre National d'Etudes Spatiales (CNES) and the European Space Agency (ESA) have initiated several studies with LAM and TAS for listing the new functions associated with several types of MEMS, and developing new ideas of instruments.

Microelectronics in Japan

NASA Astrophysics Data System (ADS)

Boulton, William R.

1995-02-01

The purpose of this JTEC study is to evaluate Japan's electronic manufacturing and packaging capabilities within the context of global economic competition. To carry out this study, the JTEC panel evaluated the framework of the Japanese consumer electronics industry and various technological and organizational factors that are likely to determine who will win and lose in the marketplace. This study begins with a brief overview of the electronics industry, especially as it operates in Japan today. Succeeding chapters examine the electronics infrastructure in Japan and take an in-depth look at the central issues of product development in order to identify those parameters that will determine future directions for electronic packaging technologies.

Microelectronics in Japan

NASA Technical Reports Server (NTRS)

Boulton, William R.

1995-01-01

The purpose of this JTEC study is to evaluate Japan's electronic manufacturing and packaging capabilities within the context of global economic competition. To carry out this study, the JTEC panel evaluated the framework of the Japanese consumer electronics industry and various technological and organizational factors that are likely to determine who will win and lose in the marketplace. This study begins with a brief overview of the electronics industry, especially as it operates in Japan today. Succeeding chapters examine the electronics infrastructure in Japan and take an in-depth look at the central issues of product development in order to identify those parameters that will determine future directions for electronic packaging technologies.

Toxic gases used in the microelectronics industry.

PubMed

Wald, P H; Becker, C E

1986-01-01

Toxic gases are among the most dangerous materials used in manufacturing semiconductors and related devices. The storage, handling, and disposal of these gases pose a major hazard to workers and to communities located near high-technology companies. It must be anticipated that accidents, acts of terrorism, and natural calamities will result in exposure. Flammability, corrosiveness, and concentration must be considered, as well as the immediate danger to life and known human health effects of the gases used.

Electronic neuroprocessors

NASA Technical Reports Server (NTRS)

Thakoor, Anil

1991-01-01

The JPL Center for Space Microelectronics Technology (CSMT) is actively pursuing research in the neural network theory, algorithms, and electronics as well as optoelectronic neural net hardware implementations, to explore the strengths and application potential for a variety of NASA, DoD, as well as commercial application problems, where conventional computing techniques are extremely time-consuming, cumbersome, or simply non-existent. An overview of the JPL electronic neural network hardware development activities and some of the striking applications of the JPL electronic neuroprocessors are presented.

Manufacturing Methods and Technology for Digital Fault Isolation of Hybrid Microelectronic Assemblies.

DTIC Science & Technology

1982-03-01

Aircraft Company ARECAaSOENT CSR Ground Systems Group Task 007 Fullerton, California 92634 Project No. R1023 I$. =OTRS4.IWmOr SP NAnE lAD ABDASE it. REPORT...HMA feed mechanism, multiple type test sockets or adapters, and a localized UUT vessel for functional tests at temperature. The engineering model AP...test excluding (deactivated) microprocessor. * Models UUT and test adapter as a ROM. Independent latches or registers from interconnecting ports to

High-energy capacitance electrostatic micromotors

NASA Astrophysics Data System (ADS)

Baginsky, I. L.; Kostsov, E. G.

2003-03-01

The design and parameters of a new electrostatic micromotor with high energy output are described. The motor is created by means of microelectronic technology. Its operation is based on the electromechanic energy conversion during the electrostatic rolling of the metallic films (petals) on the ferroelectric film surface. The mathematical simulation of the main characteristics of the rolling process is carried out. The experimentally measured parameters of the petal step micromotors are shown. The motor operation and its efficiency are investigated.

The Integration of Bacteriorhodopsin Proteins with Semiconductor Heterostructure Devices

NASA Astrophysics Data System (ADS)

Xu, Jian

2008-03-01

Bioelectronics has emerged as one of the most rapidly developing fields among the active frontiers of interdisciplinary research. A major thrust in this field is aimed at the coupling of the technologically-unmatched performance of biological systems, such as neural and sensing functions, with the well developed technology of microelectronics and optoelectronics. To this end we have studied the integration of a suitably engineered protein, bacteriorhodopsin (BR), with semiconductor optoelectronic devices and circuits. Successful integration will potentially lead to ultrasensitive sensors with polarization selectivity and built-in preprocessing capabilities that will be useful for high speed tracking, motion and edge detection, biological detection, and artificial vision systems. In this presentation we will summarize our progresses in this area, which include fundamental studies on the transient dynamics of photo-induced charge shift in BR and the coupling mechanism at protein-semiconductor interface for effective immobilizing and selectively integrating light sensitive proteins with microelectronic devices and circuits, and the device engineering of BR-transistor-integrated optical sensors as well as their applications in phototransceiver circuits. Work done in collaboration with Pallab Bhattacharya, Jonghyun Shin, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI; Robert R. Birge, Department of Chemistry, University of Connecticut, Storrs, CT 06269; and György V'ar'o, Institute of Biophysics, Biological Research Center of the Hungarian Academy of Science, H-6701 Szeged, Hungary.

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

NASA Astrophysics Data System (ADS)

Xu, Hao; Yang, Hong; Luo, Wei-Chun; Xu, Ye-Feng; Wang, Yan-Rong; Tang, Bo; Wang, Wen-Wu; Qi, Lu-Wei; Li, Jun-Feng; Yan, Jiang; Zhu, Hui-Long; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

2016-08-01

The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it/N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

Micro-Thermoelectric Generation Modules Fabricated with Low-Cost Mechanical Machining Processes

NASA Astrophysics Data System (ADS)

Liu, Dawei; Jin, A. J.; Peng, Wenbo; Li, Qiming; Gao, Hu; Zhu, Lianjun; Li, Fu; Zhu, Zhixiang

2017-05-01

Micro/small-scale thermoelectric generation modules are able to produce continuous, noise-free and reliable electricity power using low temperature differences that widely exist in nature or industry. These advantages bring them great application prospects in the fields of remote monitoring, microelectronics/micro-electromechanical systems (MEMS), medical apparatus and smart management system, which often require a power source free of maintenance and vibration. In this work, a prototypical thermoelectric module (12 mm × 12 mm × 0.8 mm) with 15 pairs of micro-scale thermoelectric legs (0.2 mm in width and 0.6 mm in height for each leg) is fabricated using a low-cost mechanical machining process. In this process, cutting and polishing are the main methods for the preparation of thermoelectric pairs from commercial polycrystalline materials and for the fabrication of electrode patterns. The as-fabricated module is tested for its power generation properties with the hot side heated by an electrical heater and the cold side by cold air. With the heater temperature of 375 K, the thermoelectric potential is about 9.1 mV, the short circuit current is about 14.5 mA, and the maximum output power is about 32.8 μW. The finite element method is applied to analyze the heat transfer of the module during our test. The temperature difference and heat flux are simulated, according to which the output powers at different temperatures are calculated, and the result is relatively consistent compared to the test results.

Maximizing Tensile Strain in Germanium Nanomembranes for Enhanced Optoelectronic Properties

NASA Astrophysics Data System (ADS)

Sanchez Perez, Jose Roberto

Silicon, germanium, and their alloys, which provide the leading materials platform of microelectronics, are extremely inefficient light emitters because of their indirect fundamental energy band gap. This basic materials property has so far hindered the development of group-IV photonic-active devices, including light emitters and diode lasers, thereby significantly limiting our ability to integrate electronic and photonic functionalities at the chip level. Theoretical studies have predicted that tensile strain in Ge lowers the direct energy band gap relative to the indirect one, and that, with sufficient strain, Ge becomes direct-band gap, thus enabling facile interband light emission and the fabrication of Group IV lasers. It has, however, not been possible to impart sufficient strain to Ge to reach the direct-band gap goal, because bulk Ge fractures at much lower strains. Here it is shown that very thin sheets of Ge(001), called nanomembranes (NMs), can be used to overcome this materials limitation. Germanium nanomembranes (NMs) in the range of thicknesses from 20nm to 100nm were fabricated and then transferred and mounted to a flexible substrate [a polyimide (PI) sheet]. An apparatus was developed to stress the PI/NM combination and provide for in-situ Raman measurements of the strain as a function of applied stress. This arrangement allowed for the introduction of sufficient biaxial tensile strain (>1.7%) to transform Ge to a direct-band gap material, as determined by photoluminescence (PL) measurements and theory. Appropriate shifts in the emission spectrum and increases in PL intensities were observed. The advance in this work was nanomembrane fabrication technology; i.e., making thin enough Ge sheets to accept sufficiently high levels of strain without fracture. It was of interest to determine if the strain at which fracture ultimately does occur can be raised, by evaluating factors that initiate fracture. Attempts to assess the effect of free edges (enchant access holes) on the NM were made and an increase of 35% in the strain to at which crack first formed was found on NMs that lack etchant access holes. Ge NMs were used as a platform to investigate the relationships between surface passivation / functionalization and the physical properties of the material.

NASA IVHM Technology Experiment for X-vehicles (NITEX)

NASA Technical Reports Server (NTRS)

Sandra, Hayden; Bajwa, Anupa

2001-01-01

The purpose of the NASA IVHM Technology Experiment for X-vehicles (NITEX) is to advance the development of selected IVHM technologies in a flight environment and to demonstrate the potential for reusable launch vehicle ground processing savings. The technologies to be developed and demonstrated include system-level and detailed diagnostics for real-time fault detection and isolation, prognostics for fault prediction, automated maintenance planning based on diagnostic and prognostic results, and a microelectronics hardware platform. Complete flight The Evolution of Flexible Insulation as IVHM consists of advanced sensors, distributed data acquisition, data processing that includes model-based diagnostics, prognostics and vehicle autonomy for control or suggested action, and advanced data storage. Complete ground IVHM consists of evolved control room architectures, advanced applications including automated maintenance planning and automated ground support equipment. This experiment will advance the development of a subset of complete IVHM.

Flexible nano-GFO/PVDF piezoelectric-polymer nano-composite films for mechanical energy harvesting

NASA Astrophysics Data System (ADS)

Mishra, Monali; Roy, Amritendu; Dash, Sukalyan; Mukherjee, Somdutta

2018-03-01

Owing to the persistent quest of renewable energy technology, piezoelectric energy harvesters are gathering considerable research interest due to their potential in driving microelectronic devices with small power requirement. Electrical energy (milli to microwatt range) is generated from mechanical counterparts such as vibrations of machines, human motion, flowing water etc. based on the principles of piezoelectricity. Flexible high piezoelectric constant (d33) ceramic/polymer composites are crucial components for fabricating these energy harvesters. The polymer composites composed of gallium ferrite nanoparticles and polyvinylidene fluoride (PVDF) as the matrix have been synthesized by solvent casting method. First, 8 wt. % PVDF was dissolved in DMF and then different compositions of GaFeO3 or GFO (10, 20, 30 wt. %) (with respect to PVDF only) nanocomposites were synthesized. The phase of the synthesized nanocomposites were studied by X- Ray diffraction which shows that with the increase in the GFO concentration, the intensity of diffraction peaks of PVDF steadily decreased and GFO peaks became increasingly sharp. As the concentration of GFO increases in the PVDF polymer matrix, band gap is also increased albeit to a small extent. The maximum measured output voltage and current during mechanical pressing and releasing conditions were found to be ~ 3.5 volt and 4 nA, respectively in 30 wt % GFO-PVDF composite, comparable to the available literature.

A multichannel integrated circuit for electrical recording of neural activity, with independent channel programmability.

PubMed

Mora Lopez, Carolina; Prodanov, Dimiter; Braeken, Dries; Gligorijevic, Ivan; Eberle, Wolfgang; Bartic, Carmen; Puers, Robert; Gielen, Georges

2012-04-01

Since a few decades, micro-fabricated neural probes are being used, together with microelectronic interfaces, to get more insight in the activity of neuronal networks. The need for higher temporal and spatial recording resolutions imposes new challenges on the design of integrated neural interfaces with respect to power consumption, data handling and versatility. In this paper, we present an integrated acquisition system for in vitro and in vivo recording of neural activity. The ASIC consists of 16 low-noise, fully-differential input channels with independent programmability of its amplification (from 100 to 6000 V/V) and filtering (1-6000 Hz range) capabilities. Each channel is AC-coupled and implements a fourth-order band-pass filter in order to steeply attenuate out-of-band noise and DC input offsets. The system achieves an input-referred noise density of 37 nV/√Hz, a NEF of 5.1, a CMRR > 60 dB, a THD < 1% and a sampling rate of 30 kS/s per channel, while consuming a maximum of 70 μA per channel from a single 3.3 V. The ASIC was implemented in a 0.35 μm CMOS technology and has a total area of 5.6 × 4.5 mm². The recording system was successfully validated in in vitro and in vivo experiments, achieving simultaneous multichannel recordings of cell activity with satisfactory signal-to-noise ratios.

Morphable 3D mesostructures and microelectronic devices by multistable buckling mechanics.

PubMed

Fu, Haoran; Nan, Kewang; Bai, Wubin; Huang, Wen; Bai, Ke; Lu, Luyao; Zhou, Chaoqun; Liu, Yunpeng; Liu, Fei; Wang, Juntong; Han, Mengdi; Yan, Zheng; Luan, Haiwen; Zhang, Yijie; Zhang, Yutong; Zhao, Jianing; Cheng, Xu; Li, Moyang; Lee, Jung Woo; Liu, Yuan; Fang, Daining; Li, Xiuling; Huang, Yonggang; Zhang, Yihui; Rogers, John A

2018-03-01

Three-dimensional (3D) structures capable of reversible transformations in their geometrical layouts have important applications across a broad range of areas. Most morphable 3D systems rely on concepts inspired by origami/kirigami or techniques of 3D printing with responsive materials. The development of schemes that can simultaneously apply across a wide range of size scales and with classes of advanced materials found in state-of-the-art microsystem technologies remains challenging. Here, we introduce a set of concepts for morphable 3D mesostructures in diverse materials and fully formed planar devices spanning length scales from micrometres to millimetres. The approaches rely on elastomer platforms deformed in different time sequences to elastically alter the 3D geometries of supported mesostructures via nonlinear mechanical buckling. Over 20 examples have been experimentally and theoretically investigated, including mesostructures that can be reshaped between different geometries as well as those that can morph into three or more distinct states. An adaptive radiofrequency circuit and a concealable electromagnetic device provide examples of functionally reconfigurable microelectronic devices.

[Medicine 4.0, the importance of electronics, information technology and microsystems in modern medicine - the case of customized chemotherapy].

PubMed

Wolf, Bernhard; Scholze, Christian

2018-05-01

A paradigm shift seems to emerge, not only in industrial engineering ("Industry 4.0") but also in medicine: we are on the threshold to "Medicine 4.0". For many years, molecular biology had a leading position in life sciences, but today scientists start realizing that microelectronic systems, due to an increasing miniaturization, are reaching the scale of human cells and consequently can be used for therapeutic approaches. This article shows how microelectronics can play a major role in modern medicine, through the example of customized chemotherapy. This consists in determining, before the beginning of the treatment, what kind of chemotherapy or drug combination will be most effective for a given patient, and at which dose. This of course allows the lessening of a patient burden during treatment, but also to be more efficient and, in the long run, to save money. In order to do this, we have developed the Intelligent Microplate Reader (IMR), which allows us to accurately test different drugs on living cells by mimicking part of their usual environment. © 2018 médecine/sciences – Inserm.

Morphable 3D mesostructures and microelectronic devices by multistable buckling mechanics

NASA Astrophysics Data System (ADS)

Fu, Haoran; Nan, Kewang; Bai, Wubin; Huang, Wen; Bai, Ke; Lu, Luyao; Zhou, Chaoqun; Liu, Yunpeng; Liu, Fei; Wang, Juntong; Han, Mengdi; Yan, Zheng; Luan, Haiwen; Zhang, Yijie; Zhang, Yutong; Zhao, Jianing; Cheng, Xu; Li, Moyang; Lee, Jung Woo; Liu, Yuan; Fang, Daining; Li, Xiuling; Huang, Yonggang; Zhang, Yihui; Rogers, John A.

2018-03-01

Three-dimensional (3D) structures capable of reversible transformations in their geometrical layouts have important applications across a broad range of areas. Most morphable 3D systems rely on concepts inspired by origami/kirigami or techniques of 3D printing with responsive materials. The development of schemes that can simultaneously apply across a wide range of size scales and with classes of advanced materials found in state-of-the-art microsystem technologies remains challenging. Here, we introduce a set of concepts for morphable 3D mesostructures in diverse materials and fully formed planar devices spanning length scales from micrometres to millimetres. The approaches rely on elastomer platforms deformed in different time sequences to elastically alter the 3D geometries of supported mesostructures via nonlinear mechanical buckling. Over 20 examples have been experimentally and theoretically investigated, including mesostructures that can be reshaped between different geometries as well as those that can morph into three or more distinct states. An adaptive radiofrequency circuit and a concealable electromagnetic device provide examples of functionally reconfigurable microelectronic devices.

Towards co-packaging of photonics and microelectronics in existing manufacturing facilities

NASA Astrophysics Data System (ADS)

Janta-Polczynski, Alexander; Cyr, Elaine; Bougie, Jerome; Drouin, Alain; Langlois, Richard; Childers, Darrell; Takenobu, Shotaro; Taira, Yoichi; Lichoulas, Ted W.; Kamlapurkar, Swetha; Engelmann, Sebastian; Fortier, Paul; Boyer, Nicolas; Barwicz, Tymon

2018-02-01

The impact of integrated photonics on optical interconnects is currently muted by challenges in photonic packaging and in the dense integration of photonic modules with microelectronic components on printed circuit boards. Single mode optics requires tight alignment tolerance for optical coupling and maintaining this alignment in a cost-efficient package can be challenging during thermal excursions arising from downstream microelectronic assembly processes. In addition, the form factor of typical fiber connectors is incompatible with the dense module integration expected on printed circuit boards. We have implemented novel approaches to interfacing photonic chips to standard optical fibers. These leverage standard high throughput microelectronic assembly tooling and self-alignment techniques resulting in photonic packaging that is scalable in manufacturing volume and in the number of optical IOs per chip. In addition, using dense optical fiber connectors with space-efficient latching of fiber patch cables results in compact module size and efficient board integration, bringing the optics closer to the logic chip to alleviate bandwidth bottlenecks. This packaging direction is also well suited for embedding optics in multi-chip modules, including both photonic and microelectronic chips. We discuss the challenges and rewards in this type of configuration such as thermal management and signal integrity.

Physical Limitations in Lithography for Microelectronics.

ERIC Educational Resources Information Center

Flavin, P. G.

1981-01-01

Describes techniques being used in the production of microelectronics kits which have replaced traditional optical lithography, including contact and optical projection printing, and X-ray and electron beam lithography. Also includes limitations of each technique described. (SK)

Three-dimensional printing of freeform helical microstructures: a review.

PubMed

Farahani, R D; Chizari, K; Therriault, D

2014-09-21

Three-dimensional (3D) printing is a fabrication method that enables creation of structures from digital models. Among the different structures fabricated by 3D printing methods, helical microstructures attracted the attention of the researchers due to their potential in different fields such as MEMS, lab-on-a-chip systems, microelectronics and telecommunications. Here we review different types of 3D printing methods capable of fabricating 3D freeform helical microstructures. The techniques including two more common microfabrication methods (i.e., focused ion beam chemical vapour deposition and microstereolithography) and also five methods based on computer-controlled robotic direct deposition of ink filament (i.e., fused deposition modeling, meniscus-confined electrodeposition, conformal printing on a rotating mandrel, UV-assisted and solvent-cast 3D printings) and their advantages and disadvantages regarding their utilization for the fabrication of helical microstructures are discussed. Focused ion beam chemical vapour deposition and microstereolithography techniques enable the fabrication of very precise shapes with a resolution down to ∼100 nm. However, these techniques may have material constraints (e.g., low viscosity) and/or may need special process conditions (e.g., vacuum chamber) and expensive equipment. The five other techniques based on robotic extrusion of materials through a nozzle are relatively cost-effective, however show lower resolution and less precise features. The popular fused deposition modeling method offers a wide variety of printable materials but the helical microstructures manufactured featured a less precise geometry compared to the other printing methods discussed in this review. The UV-assisted and the solvent-cast 3D printing methods both demonstrated high performance for the printing of 3D freeform structures such as the helix shape. However, the compatible materials used in these methods were limited to UV-curable polymers and polylactic acid (PLA), respectively. Meniscus-confined electrodeposition is a flexible, low cost technique that is capable of fabricating 3D structures both in nano- and microscales including freeform helical microstructures (down to few microns) under room conditions using metals. However, the metals suitable for this technique are limited to those that can be electrochemically deposited with the use of an electrolyte solution. The highest precision on the helix geometry was achieved using the conformal printing on a rotating mandrel. This method offers the lowest shape deformation after printing but requires more tools (e.g., mandrel, motor) and the printed structure must be separated from the mandrel. Helical microstructures made of multifunctional materials (e.g., carbon nanotube nanocomposites, metallic coated polymer template) were used in different technological applications such as strain/load sensors, cell separators and micro-antennas. These innovative 3D microsystems exploiting the unique helix shape demonstrated their potential for better performance and more compact microsystems.

Systematic Computation of Nonlinear Cellular and Molecular Dynamics with Low-Power CytoMimetic Circuits: A Simulation Study

PubMed Central

Papadimitriou, Konstantinos I.; Stan, Guy-Bart V.; Drakakis, Emmanuel M.

2013-01-01

This paper presents a novel method for the systematic implementation of low-power microelectronic circuits aimed at computing nonlinear cellular and molecular dynamics. The method proposed is based on the Nonlinear Bernoulli Cell Formalism (NBCF), an advanced mathematical framework stemming from the Bernoulli Cell Formalism (BCF) originally exploited for the modular synthesis and analysis of linear, time-invariant, high dynamic range, logarithmic filters. Our approach identifies and exploits the striking similarities existing between the NBCF and coupled nonlinear ordinary differential equations (ODEs) typically appearing in models of naturally encountered biochemical systems. The resulting continuous-time, continuous-value, low-power CytoMimetic electronic circuits succeed in simulating fast and with good accuracy cellular and molecular dynamics. The application of the method is illustrated by synthesising for the first time microelectronic CytoMimetic topologies which simulate successfully: 1) a nonlinear intracellular calcium oscillations model for several Hill coefficient values and 2) a gene-protein regulatory system model. The dynamic behaviours generated by the proposed CytoMimetic circuits are compared and found to be in very good agreement with their biological counterparts. The circuits exploit the exponential law codifying the low-power subthreshold operation regime and have been simulated with realistic parameters from a commercially available CMOS process. They occupy an area of a fraction of a square-millimetre, while consuming between 1 and 12 microwatts of power. Simulations of fabrication-related variability results are also presented. PMID:23393550

1ST International Conference on Small Satellites: New Technologies, Achievements, Problems And Prospects For International Co-Operation In The New Millenium.

DTIC Science & Technology

1998-01-01

deployment of the two first systems Iridium and Globalstar. This event forces us to reconsider prospects of creating new systems of a similar class...Korolev, Moscow Region, Russian Federation Now are created and the new electro-optics equipment of the earth remote sensing are developed which...PC for control and data preprocessing; • software. The modern level of microelectronics development allows to create an advanced SMASSIR with new

Space station automation study. Automation requirements derived from space manufacturing concepts. Volume 1: Executive summary

NASA Technical Reports Server (NTRS)

1984-01-01

The two manufacturing concepts developed represent innovative, technologically advanced manufacturing schemes. The concepts were selected to facilitate an in depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, and artificial intelligence. While the cost effectiveness of these facilities has not been analyzed as part of this study, both appear entirely feasible for the year 2000 timeframe. The growing demand for high quality gallium arsenide microelectronics may warrant the ventures.

Investigation of discrete component chip mounting technology for hybrid microelectronic circuits

NASA Technical Reports Server (NTRS)

Caruso, S. V.; Honeycutt, J. O.

1975-01-01

The use of polymer adhesives for high reliability microcircuit applications is a radical deviation from past practices in electronic packaging. Bonding studies were performed using two gold-filled conductive adhesives, 10/90 tin/lead solder and Indalloy no. 7 solder. Various types of discrete components were mounted on ceramic substrates using both thick-film and thin-film metallization. Electrical and mechanical testing were performed on the samples before and after environmental exposure to MIL-STD-883 screening tests.

Fabrication of fillable microparticles and other complex 3D microstructures

NASA Astrophysics Data System (ADS)

McHugh, Kevin J.; Nguyen, Thanh D.; Linehan, Allison R.; Yang, David; Behrens, Adam M.; Rose, Sviatlana; Tochka, Zachary L.; Tzeng, Stephany Y.; Norman, James J.; Anselmo, Aaron C.; Xu, Xian; Tomasic, Stephanie; Taylor, Matthew A.; Lu, Jennifer; Guarecuco, Rohiverth; Langer, Robert; Jaklenec, Ana

2017-09-01

Three-dimensional (3D) microstructures created by microfabrication and additive manufacturing have demonstrated value across a number of fields, ranging from biomedicine to microelectronics. However, the techniques used to create these devices each have their own characteristic set of advantages and limitations with regards to resolution, material compatibility, and geometrical constraints that determine the types of microstructures that can be formed. We describe a microfabrication method, termed StampEd Assembly of polymer Layers (SEAL), and create injectable pulsatile drug-delivery microparticles, pH sensors, and 3D microfluidic devices that we could not produce using traditional 3D printing. SEAL allows us to generate microstructures with complex geometry at high resolution, produce fully enclosed internal cavities containing a solid or liquid, and use potentially any thermoplastic material without processing additives.

MEMS Device Being Developed for Active Cooling and Temperature Control

NASA Technical Reports Server (NTRS)

Moran, Matthew E.

2001-01-01

High-capacity cooling options remain limited for many small-scale applications such as microelectronic components, miniature sensors, and microsystems. A microelectromechanical system (MEMS) is currently under development at the NASA Glenn Research Center to meet this need. It uses a thermodynamic cycle to provide cooling or heating directly to a thermally loaded surface. The device can be used strictly in the cooling mode, or it can be switched between cooling and heating modes in milliseconds for precise temperature control. Fabrication and assembly are accomplished by wet etching and wafer bonding techniques routinely used in the semiconductor processing industry. Benefits of the MEMS cooler include scalability to fractions of a millimeter, modularity for increased capacity and staging to low temperatures, simple interfaces and limited failure modes, and minimal induced vibration.

Direct write with microelectronic circuit fabrication

DOEpatents

Drummond, T.; Ginley, D.

1988-05-31

In a process for deposition of material onto a substrate, for example, the deposition of metals for dielectrics onto a semiconductor laser, the material is deposited by providing a colloidal suspension of the material and directly writing the suspension onto the substrate surface by ink jet printing techniques. This procedure minimizes the handling requirements of the substrate during the deposition process and also minimizes the exchange of energy between the material to be deposited and the substrate at the interface. The deposited material is then resolved into a desired pattern, preferably by subjecting the deposit to a laser annealing step. The laser annealing step provides high resolution of the resultant pattern while minimizing the overall thermal load of the substrate and permitting precise control of interface chemistry and interdiffusion between the substrate and the deposit. 3 figs.

Direct write with microelectronic circuit fabrication

DOEpatents

Drummond, Timothy; Ginley, David

1992-01-01

In a process for deposition of material onto a substrate, for example, the deposition of metals or dielectrics onto a semiconductor laser, the material is deposited by providing a colloidal suspension of the material and directly writing the suspension onto the substrate surface by ink jet printing techniques. This procedure minimizes the handling requirements of the substrate during the deposition process and also minimizes the exchange of energy between the material to be deposited and the substrate at the interface. The deposited material is then resolved into a desired pattern, preferably by subjecting the deposit to a laser annealing step. The laser annealing step provides high resolution of the resultant pattern while minimizing the overall thermal load of the substrate and permitting precise control of interface chemistry and interdiffusion between the substrate and the deposit.

Metal nanoparticle film–based room temperature Coulomb transistor

PubMed Central

Willing, Svenja; Lehmann, Hauke; Volkmann, Mirjam; Klinke, Christian

2017-01-01

Single-electron transistors would represent an approach to developing less power–consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations. PMID:28740864

Low-Damage Sputter Deposition on Graphene

NASA Astrophysics Data System (ADS)

Chen, Ching-Tzu; Casu, Emanuele; Gajek, Marcin; Raoux, Simone

2013-03-01

Despite its versatility and prevalence in the microelectronics industry, sputter deposition has seen very limited applications for graphene-based electronics. We have systematically investigated the sputtering induced graphene defects and identified the reflected high-energy neutrals of the sputtering gas as the primary cause of damage. In this talk, we introduce a novel sputtering technique that is shown to dramatically reduce bombardment of the fast neutrals and improve the structural integrity of the underlying graphene layer. We also demonstrate that sputter deposition and in-situ oxidation of 1 nm Al film at elevated temperatures yields homogeneous, fully covered oxide films with r.m.s. roughness much less than 1 monolayer, which shows the potential of using such technique for gate oxides, tunnel barriers, and multilayer fabrication in a wide range of graphene devices.

Design, Fabrication, and Characterization of Carbon Nanotube Field Emission Devices for Advanced Applications

NASA Astrophysics Data System (ADS)

Radauscher, Erich Justin

Carbon nanotubes (CNTs) have recently emerged as promising candidates for electron field emission (FE) cathodes in integrated FE devices. These nanostructured carbon materials possess exceptional properties and their synthesis can be thoroughly controlled. Their integration into advanced electronic devices, including not only FE cathodes, but sensors, energy storage devices, and circuit components, has seen rapid growth in recent years. The results of the studies presented here demonstrate that the CNT field emitter is an excellent candidate for next generation vacuum microelectronics and related electron emission devices in several advanced applications. The work presented in this study addresses determining factors that currently confine the performance and application of CNT-FE devices. Characterization studies and improvements to the FE properties of CNTs, along with Micro-Electro-Mechanical Systems (MEMS) design and fabrication, were utilized in achieving these goals. Important performance limiting parameters, including emitter lifetime and failure from poor substrate adhesion, are examined. The compatibility and integration of CNT emitters with the governing MEMS substrate (i.e., polycrystalline silicon), and its impact on these performance limiting parameters, are reported. CNT growth mechanisms and kinetics were investigated and compared to silicon (100) to improve the design of CNT emitter integrated MEMS based electronic devices, specifically in vacuum microelectronic device (VMD) applications. Improved growth allowed for design and development of novel cold-cathode FE devices utilizing CNT field emitters. A chemical ionization (CI) source based on a CNT-FE electron source was developed and evaluated in a commercial desktop mass spectrometer for explosives trace detection. This work demonstrated the first reported use of a CNT-based ion source capable of collecting CI mass spectra. The CNT-FE source demonstrated low power requirements, pulsing capabilities, and average lifetimes of over 320 hours when operated in constant emission mode under elevated pressures, without sacrificing performance. Additionally, a novel packaged ion source for miniature mass spectrometer applications using CNT emitters, a MEMS based Nier-type geometry, and a Low Temperature Cofired Ceramic (LTCC) 3D scaffold with integrated ion optics were developed and characterized. While previous research has shown other devices capable of collecting ion currents on chip, this LTCC packaged MEMS micro-ion source demonstrated improvements in energy and angular dispersion as well as the ability to direct the ions out of the packaged source and towards a mass analyzer. Simulations and experimental design, fabrication, and characterization were used to make these improvements. Finally, novel CNT-FE devices were developed to investigate their potential to perform as active circuit elements in VMD circuits. Difficulty integrating devices at micron-scales has hindered the use of vacuum electronic devices in integrated circuits, despite the unique advantages they offer in select applications. Using a combination of particle trajectory simulation and experimental characterization, device performance in an integrated platform was investigated. Solutions to the difficulties in operating multiple devices in close proximity and enhancing electron transmission (i.e., reducing grid loss) are explored in detail. A systematic and iterative process was used to develop isolation structures that reduced crosstalk between neighboring devices from 15% on average, to nearly zero. Innovative geometries and a new operational mode reduced grid loss by nearly threefold, thereby improving transmission of the emitted cathode current to the anode from 25% in initial designs to 70% on average. These performance enhancements are important enablers for larger scale integration and for the realization of complex vacuum microelectronic circuits.

Reproductive Hazards Still Persist in the Microelectronics Industry: Increased Risk of Spontaneous Abortion and Menstrual Aberration among Female Workers in the Microelectronics Industry in South Korea

PubMed Central

Kim, Inah; Kim, Myoung-Hee; Lim, Sinye

2015-01-01

Objectives Despite the global expansion of supply chains and changes to the production process, few studies since the mid-1990s and 2000s have examined reproductive risks of the microelectronics industry; we examined the reproductive risks among female microelectronics workers in South Korea. Methods Based on claim data from the National Health Insurance (2008–2012), we estimated age-specific rates of spontaneous abortion (SAB) and menstrual aberration (MA) among women aged 20 to 39 years. We compared data between microelectronics workers and three different control groups: economically inactive women, the working population as a whole, and workers employed in the bank industry. For an effect measure, age-stratified relative risks (RRs) were estimated. Results Female workers in the microelectronics industry showed significantly higher risk for SAB and MA compared to control groups. The RRs for SAB with reference to economically inactive women, working population, and bank workers in their twenties were 1.57, 1.40, and 1.37, respectively, and the RRs for MA among females in their twenties were 1.54, 1.38, and 1.48, respectively. For women in their thirties, RRs for SAB were 1.58, 1.67, and 1.13, and those for MA were 1.25, 1.35, and 1.23 compared to the three control populations, respectively. All RRs were statistically significant at a level of 0.05, except for the SAB case comparison with bank workers in their thirties. Conclusions Despite technical innovations and health and safety measures, female workers in microelectronics industry in South Korea have high rates of SAB and MA, suggesting continued exposure to reproductive hazards. Further etiologic studies based on primary data collection and careful surveillance are required to confirm these results. PMID:25938673

Advanced imaging research and development at DARPA

NASA Astrophysics Data System (ADS)

Dhar, Nibir K.; Dat, Ravi

2012-06-01

Advances in imaging technology have huge impact on our daily lives. Innovations in optics, focal plane arrays (FPA), microelectronics and computation have revolutionized camera design. As a result, new approaches to camera design and low cost manufacturing is now possible. These advances are clearly evident in visible wavelength band due to pixel scaling, improvements in silicon material and CMOS technology. CMOS cameras are available in cell phones and many other consumer products. Advances in infrared imaging technology have been slow due to market volume and many technological barriers in detector materials, optics and fundamental limits imposed by the scaling laws of optics. There is of course much room for improvements in both, visible and infrared imaging technology. This paper highlights various technology development projects at DARPA to advance the imaging technology for both, visible and infrared. Challenges and potentials solutions are highlighted in areas related to wide field-of-view camera design, small pitch pixel, broadband and multiband detectors and focal plane arrays.

Superconducting Microelectronics.

ERIC Educational Resources Information Center

Henry, Richard W.

1984-01-01

Discusses superconducting microelectronics based on the Josephson effect and its advantages over conventional integrated circuits in speed and sensitivity. Considers present uses in standards laboratories (voltage) and in measuring weak magnetic fields. Also considers future applications in superfast computer circuitry using Superconducting…

Intermetallic compounds in 3D integrated circuits technology: a brief review

NASA Astrophysics Data System (ADS)

Annuar, Syahira; Mahmoodian, Reza; Hamdi, Mohd; Tu, King-Ning

2017-12-01

The high performance and downsizing technology of three-dimensional integrated circuits (3D-ICs) for mobile consumer electronic products have gained much attention in the microelectronics industry. This has been driven by the utilization of chip stacking by through-Si-via and solder microbumps. Pb-free solder microbumps are intended to replace conventional Pb-containing solder joints due to the rising awareness of environmental preservation. The use of low-volume solder microbumps has led to crucial constraints that cause several reliability issues, including excessive intermetallic compounds (IMCs) formation and solder microbump embrittlement due to IMCs growth. This article reviews technologies related to 3D-ICs, IMCs formation mechanisms and reliability issues concerning IMCs with Pb-free solder microbumps. Finally, future outlook on the potential growth of research in this area is discussed.

Intermetallic compounds in 3D integrated circuits technology: a brief review.

PubMed

Annuar, Syahira; Mahmoodian, Reza; Hamdi, Mohd; Tu, King-Ning

2017-01-01

The high performance and downsizing technology of three-dimensional integrated circuits (3D-ICs) for mobile consumer electronic products have gained much attention in the microelectronics industry. This has been driven by the utilization of chip stacking by through-Si-via and solder microbumps. Pb-free solder microbumps are intended to replace conventional Pb-containing solder joints due to the rising awareness of environmental preservation. The use of low-volume solder microbumps has led to crucial constraints that cause several reliability issues, including excessive intermetallic compounds (IMCs) formation and solder microbump embrittlement due to IMCs growth. This article reviews technologies related to 3D-ICs, IMCs formation mechanisms and reliability issues concerning IMCs with Pb-free solder microbumps. Finally, future outlook on the potential growth of research in this area is discussed.

Sandia Technology engineering and science accomplishments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

This report briefly discusses the following research being conducted at Sandia Laboratories: Advanced Manufacturing -- Sandia technology helps keep US industry in the lead; Microelectronics-Sandia`s unique facilities transform research advances into manufacturable products; Energy -- Sandia`s energy programs focus on strengthening industrial growth and political decisionmaking; Environment -- Sandia is a leader in environmentally conscious manufacturing and hazardous waste reduction; Health Care -- New biomedical technologies help reduce cost and improve quality of health care; Information & Computation -- Sandia aims to help make the information age a reality; Transportation -- This new initiative at the Labs will help improvemore » transportation, safety,l efficiency, and economy; Nonproliferation -- Dismantlement and arms control are major areas of emphasis at Sandia; and Awards and Patents -- Talented, dedicated employees are the backbone of Sandia`s success.« less

Physics through the 1990s: Scientific interfaces and technological applications

NASA Technical Reports Server (NTRS)

1986-01-01

The volume examines the scientific interfaces and technological applications of physics. Twelve areas are dealt with: biological physics-biophysics, the brain, and theoretical biology; the physics-chemistry interface-instrumentation, surfaces, neutron and synchrotron radiation, polymers, organic electronic materials; materials science; geophysics-tectonics, the atmosphere and oceans, planets, drilling and seismic exploration, and remote sensing; computational physics-complex systems and applications in basic research; mathematics-field theory and chaos; microelectronics-integrated circuits, miniaturization, future trends; optical information technologies-fiber optics and photonics; instrumentation; physics applications to energy needs and the environment; national security-devices, weapons, and arms control; medical physics-radiology, ultrasonics, MNR, and photonics. An executive summary and many chapters contain recommendations regarding funding, education, industry participation, small-group university research and large facility programs, government agency programs, and computer database needs.

Overview of Micro- and Nano-Technology Tools for Stem Cell Applications: Micropatterned and Microelectronic Devices

PubMed Central

Cagnin, Stefano; Cimetta, Elisa; Guiducci, Carlotta; Martini, Paolo; Lanfranchi, Gerolamo

2012-01-01

In the past few decades the scientific community has been recognizing the paramount role of the cell microenvironment in determining cell behavior. In parallel, the study of human stem cells for their potential therapeutic applications has been progressing constantly. The use of advanced technologies, enabling one to mimic the in vivo stem cell microenviroment and to study stem cell physiology and physio-pathology, in settings that better predict human cell biology, is becoming the object of much research effort. In this review we will detail the most relevant and recent advances in the field of biosensors and micro- and nano-technologies in general, highlighting advantages and disadvantages. Particular attention will be devoted to those applications employing stem cells as a sensing element. PMID:23202240

Overview of micro- and nano-technology tools for stem cell applications: micropatterned and microelectronic devices.

PubMed

Cagnin, Stefano; Cimetta, Elisa; Guiducci, Carlotta; Martini, Paolo; Lanfranchi, Gerolamo

2012-11-19

In the past few decades the scientific community has been recognizing the paramount role of the cell microenvironment in determining cell behavior. In parallel, the study of human stem cells for their potential therapeutic applications has been progressing constantly. The use of advanced technologies, enabling one to mimic the in vivo stem cell microenviroment and to study stem cell physiology and physio-pathology, in settings that better predict human cell biology, is becoming the object of much research effort. In this review we will detail the most relevant and recent advances in the field of biosensors and micro- and nano-technologies in general, highlighting advantages and disadvantages. Particular attention will be devoted to those applications employing stem cells as a sensing element.

Flywheels Upgraded for Systems Research

NASA Technical Reports Server (NTRS)

Jansen, Ralph H.

2003-01-01

With the advent of high-strength composite materials and microelectronics, flywheels are becoming attractive as a means of storing electrical energy. In addition to the high energy density that flywheels provide, other advantages over conventional electrochemical batteries include long life, high reliability, high efficiency, greater operational flexibility, and higher depths of discharge. High pulse energy is another capability that flywheels can provide. These attributes are favorable for satellites as well as terrestrial energy storage applications. In addition to energy storage for satellites, the several flywheels operating concurrently can provide attitude control, thus combine two functions into one system. This translates into significant weight savings. The NASA Glenn Research Center is involved in the development of this technology for space and terrestrial applications. Glenn is well suited for this research because of its world-class expertise in power electronics design, rotor dynamics, composite material research, magnetic bearings, and motor design and control. Several Glenn organizations are working together on this program. The Structural Mechanics and Dynamics Branch is providing magnetic bearing, controls, and mechanical engineering skills. It is working with the Electrical Systems Development Branch, which has expertise in motors and generators, controls, and avionics systems. Facility support is being provided by the Space Electronic Test Engineering Branch, and the program is being managed by the Space Flight Project Branch. NASA is funding an Aerospace Flywheel Technology Development Program to design, fabricate, and test the Attitude Control/Energy Storage Experiment (ACESE). Two flywheels will be integrated onto a single power bus and run simultaneously to demonstrate a combined energy storage and 1-degree-of-freedom momentum control system. An algorithm that independently regulates direct-current bus voltage and net torque output will be experimentally demonstrated.

Evidence for adverse reproductive outcomes among women microelectronic assembly workers.

PubMed Central

Huel, G; Mergler, D; Bowler, R

1990-01-01

Microelectronics assembly entails complex processes where several potentially fetotoxic chemical compounds are used extensively. This study was undertaken to assess the potential adverse reproductive outcomes among former women workers in a microelectronics assembly plant in New Mexico with respect to a comparable population from the same geographical region and to examine the relation between these outcomes and employment history in this plant. After matching a pool of 143 former microelectronic female workers and 105 referents, 90 former microelectronic female worker-referent pairs were constituted (representing 302 and 324 pregnancies in former workers and referents respectively). The odds ratio (for pair matching design) of spontaneous abortion among women workers, before beginning to assemble microelectronic components, was 0.9 (chi 2 = 0.04; NS). After the beginning of employment this odds ratio became 5.6 (chi 2 = 9.8; p less than 1%). This estimated odds ratio decreased to 4.0, taking into account the increased risk for spontaneous abortion in previous pregnancies before employment (chi 2 = 5.4; p less than 5%). It was not possible to determine if this effect was reversible owing to the small number of pairs available after employment. The findings of this study corroborate the results of former studies that suggest a potential association between electronic manufacturing activity and risk of spontaneous abortion. Although the organic solvents were suspected of being the potential risk factor, this study was inconclusive from this point of view. Nevertheless, these investigations may provide some insight into reproductive outcomes among female workers exposed to solvents. PMID:2378817

Preface to the special issue of Solid State Electronics EUROSOI/ULIS 2017

NASA Astrophysics Data System (ADS)

Nassiopoulou, Androula G.

2018-05-01

This special issue is devoted to selected papers presented at the EuroSOI-ULIS2017 international conference, held in Athens on 3-5 April 2017. EuroSOI-ULIS2017 Conference was mainly devoted to Si devices, which constitute the basic building blocks of any microelectronic circuit. It included papers on advanced Si technologies, novel nanoscale devices, advanced electronic materials and device architectures, mechanisms involved, test structures, substrate materials and technologies, modeling/simulation and characterization. Both CMOS and beyond CMOS devices were presented, covering the More Moore domain, as well as new functionalities in silicon-compatible nanostructures and innovative devices, representing the More than Moore domain (on-chip sensors, biosensors, energy harvesting devices, RF passives, etc.).

Synthesis of bismuth titanate (BTO) nanopowder and fabrication of microstrip rectangular patch antenna

NASA Astrophysics Data System (ADS)

Thiruramanathan, P.; Sharma, Sanjeev K.; Sankar, S.; Sankar Ganesh, R.; Marikani, A.; Kim, Deuk Young

2016-12-01

The bismuth titanate (Bi4Ti3O12) or BTO nanopowder was synthesized from the combustion method and fabricated a microstrip rectangular patch antenna (MPA). The crystal structure and lattice spacing of BTO were evaluated from XRD, TEM, and SAED analysis. The crystal structure of BTO (annealed at 900 °C) was observed to be the orthorhombic phase with fcc lattice. The microstructure of BTO nanoparticles was confirmed the spherical and hexagonal shapes, which were slightly agglomerated due to the lack of stabilizing surfactants. The presence of weak and wide bands in Raman spectrum quantified the mechanical compressions to the uniform directions of elongated lattice constants and tensions to the lattice constriction of crystalline bismuth titanate. To fabricate the MPA, pellets of BTO nanopowder were prepared by applying the uniaxial pressure in the dimension of 1.5 mm thickness and 8 mm diameter. These pellets were formed a densely packed structure close to the theoretical density. The coercivity and remanence polarization of BTO ceramics increased as the applied field increased. The inexpensive combustion synthesis method of BTO nanopowder showed the high dielectric constant (ɛ' = 450) and low dielectric loss (tan δ = 0.98), which has a potential implication of the cost-effectiveness in the field of miniaturized microelectronics. The synthesis and measurements of BTO ceramics are found to be suitable for wireless communication systems.

New 3D structuring process for non-integrated circuit related technologies (Conference Presentation)

NASA Astrophysics Data System (ADS)

Nouri, Lamia; Possémé, Nicolas; Landis, Stéfan; Milesi, Frédéric; Gaillard, Frédéric-Xavier

2017-04-01

Fabrication processes that microelectronic developed for Integrated circuit (IC) technologies for decades, do not meet the new emerging structuration's requirements, in particular non-IC related technologies one, such as MEMS/NEMS, Micro-Fluidics, photovoltaics, lenses. Actually complex 3D structuration requires complex lithography patterning approaches such as gray-scale electron beam lithography, laser ablation, focused ion beam lithography, two photon polymerization. It is now challenging to find cheaper and easiest technique to achieve 3D structures. In this work, we propose a straightforward process to realize 3D structuration, intended for silicon based materials (Si, SiN, SiOCH). This structuration technique is based on nano-imprint lithography (NIL), ion implantation and selective wet etching. In a first step a pattern is performed by lithography on a substrate, then ion implantation is realized through a resist mask in order to create localized modifications in the material, thus the pattern is transferred into the subjacent layer. Finally, after the resist stripping, a selective wet etching is carried out to remove selectively the modified material regarding the non-modified one. In this paper, we will first present results achieved with simple 2D line array pattern processed either on Silicon or SiOCH samples. This step have been carried out to demonstrate the feasibility of this new structuration process. SEM pictures reveals that "infinite" selectivity between the implanted areas versus the non-implanted one could be achieved. We will show that a key combination between the type of implanted ion species and wet etching chemistries is required to obtain such results. The mechanisms understanding involved during both implantation and wet etching processes will also be presented through fine characterizations with Photoluminescence, Raman and Secondary Ion Mass Spectrometry (SIMS) for silicon samples, and ellipso-porosimetry and Fourier Transform InfraRed spectroscopy (FTIR) for SiOCH samples. Finally the benefit of this new patterning approach will be presented on 3D patterns structures.

Properties of zirconium silicate and zirconium-silicon oxynitride high-k dielectric alloys for advanced microelectronic applications: Chemical and electrical characterizations

NASA Astrophysics Data System (ADS)

Ju, Byongsun

2005-11-01

As the microelectronic devices are aggressively scaled down to the 1999 International Technology Roadmap, the advanced complementary metal oxide semiconductor (CMOS) is required to increase packing density of ultra-large scale integrated circuits (ULSI). High-k alternative dielectrics can provide the required levels of EOT for device scaling at larger physical thickness, thereby providing a materials pathway for reducing the tunneling current. Zr silicates and its end members (SiO2 and ZrO2) and Zr-Si oxynitride films, (ZrO2)x(Si3N 4)y(SiO2)z, have been deposited using a remote plasma-enhanced chemical vapor deposition (RPECVD) system. After deposition of Zr silicate, the films were exposed to He/N2 plasma to incorporate nitrogen atoms into the surface of films. The amount of incorporated nitrogen atoms was measured by on-line Auger electron spectrometry (AES) as a function of silicate composition and showed its local minimum around the 30% silicate. The effect of nitrogen atoms on capacitance-voltage (C-V) and leakage-voltage (J-V) were also investigated by fabricating metal-oxide-semiconductor (MOS) capacitors. Results suggested that incorporating nitrogen into silicate decreased the leakage current in SiO2-rich silicate, whereas the leakage increased in the middle range of silicate. Zr-Si oxynitride was a pseudo-ternary alloy and no phase separation was detected by x-ray photoelectron spectroscopy (XPS) analysis up to 1100°C annealing. The leakage current of Zr-Si oxynitride films showed two different temperature dependent activation energies, 0.02 eV for low temperature and 0.3 eV for high temperature. Poole-Frenkel emission was the dominant leakage mechanism. Zr silicate alloys with no Si3N4 phase were chemically separated into the SiO2 and ZrO2 phase as annealed above 900°C. While chemical phase separation in Zr silicate films with Si 3N4 phase (Zr-Si oxynitride) were suppressed as increasing the amount of Si3N4 phase due to the narrow bonding network m Si3N4 phase. (3.4 bonds/atom for Si3 N4 network, 2.67 bonds/atom for SiO2 network).

"Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

NASA Astrophysics Data System (ADS)

Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

2013-04-01

During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

From microsystems technology to the Saenger II space transportation system

NASA Astrophysics Data System (ADS)

Vogels, Hanns Arnt

The role of space projects as drivers and catalysts of technology advances is discussed and illustrated from the perspective of the West German aerospace industry, summarizing a talk presented at the 1986 meeting of the German aerospace society DGLR. The history of space-transportation-system (STS) technology since the 1950s is traced, emphasizing the needs for greater payload weights and lower costs, and the design concept of Saenger II, a proposed two-stage ESA STS employing a hypersonic jet transport aircraft as its first stage, is outlined. It is argued that experience gained in developing the rocket-launched Hermes STS will be applicable to the second stage of Saenger II. Recent developments in microsystems (combining microelectronics, micromechanics, and microoptics), advanced materials (fiber-reinforced plastics, metals, and ceramics), and energy technology (hydrogen-based systems and solar cells) are surveyed, and their applicability to STSs is considered.

MEMS in Space Systems

NASA Technical Reports Server (NTRS)

Lyke, J. C.; Michalicek, M. A.; Singaraju, B. K.

1995-01-01

Micro-electro-mechanical systems (MEMS) provide an emerging technology that has the potential for revolutionizing the way space systems are designed, assembled, and tested. The high launch costs of current space systems are a major determining factor in the amount of functionality that can be integrated in a typical space system. MEMS devices have the ability to increase the functionality of selected satellite subsystems while simultaneously decreasing spacecraft weight. The Air Force Phillips Laboratory (PL) is supporting the development of a variety of MEMS related technologies as one of several methods to reduce the weight of space systems and increase their performance. MEMS research is a natural extension of PL research objectives in micro-electronics and advanced packaging. Examples of applications that are under research include on-chip micro-coolers, micro-gyroscopes, vibration sensors, and three-dimensional packaging technologies to integrate electronics with MEMS devices. The first on-orbit space flight demonstration of these and other technologies is scheduled for next year.

Molten-Metal Droplet Deposition on a Moving Substrate in Microgravity: Aiding the Development of Novel Technologies for Microelectronic Assembly

NASA Technical Reports Server (NTRS)

Megaridis, C. M.; Bayer, I. S.; Poulikakos, D.; Nayagam, V.

2002-01-01

Driven by advancements in microelectronics manufacturing, this research investigates the oblique (non-axisymmetric) impact of liquid-metal droplets on flat substrates. The problem of interest is relevant to the development of the novel technology of on-demand dispension (printing) of microscopic solder deposits for the surface mounting of microelectronic devices. The technology, known as solder jetting, features on-demand deposition of miniature solder droplets (30 to 120 microns in diameter) in very fine, very accurate patterns using techniques analogous to those developed for the ink-jet printing industry. Despite its promise, severe limitations exist currently with regards to the throughput rates of the technology; some of these limitations are largely due to the lack of the capability for reliable prediction of solder bump positioning and shapes, especially under ballistic deposition conditions where the droplet impact phenomena are inherently three-dimensional. The study consists of a theoretical and an experimental component. The theoretical work uses a finite element formulation to simulate numerically the non-axisymmetric (3-D) fluid mechanics and heat transfer phenomena of a liquid solder droplet impacting at an angle alpha on a flat substrate. The work focuses on the pre-solidification regime. The modeling of the most challenging fluid mechanics part of the process has been completed successfully. It is based upon the full laminar Navier-Stokes equations employing a Lagrangian frame of reference. Due to the large droplet deformation, the surface (skin) as well as the volumetric mesh have to be regenerated during the calculations in order to maintain the high accuracy of the numerical scheme. The pressure and velocity fields are then interpolated on the newly created mesh. The numerical predictions are being tested against experiments, for cases where wetting phenomena are not important. For the impact parameters used in the example shown (We = 2.38, Fr = 16300, Re = 157), the droplet rolls along the substrate, but its shape remains practically axisymmetric for all impact angles within the range from 0 to 60 deg. Interestingly, the substrate/droplet contact area during the recoiling phase of the impact is not a monotonically decreasing function of time. The experimental component of the research tests the numerical predictions and provides necessary input data (contact angles) for the theoretical model. The experiments are performed in microgravity (2.2s drop tower of the NASA GRC) in order to allow for the use of mm-size solder droplets, which make feasible the performance of accurate measurements, while maintaining similitude of the relevant fluid dynamic groups (Re, Fr, We, Ste). Preliminary oblique impact experiments have been performed using water droplets in normal gravity.

Precise 3D printing of micro/nanostructures using highly conductive carbon nanotube-thiol-acrylate composites

NASA Astrophysics Data System (ADS)

Liu, Y.; Xiong, W.; Jiang, L. J.; Zhou, Y. S.; Lu, Y. F.

2016-04-01

Two-photon polymerization (TPP) is of increasing interest due to its unique combination of truly three-dimensional (3D) fabrication capability and ultrahigh spatial resolution of ~40 nm. However, the stringent requirements of non-linear resins seriously limit the material functionality of 3D printing via TPP. Precise fabrication of 3D micro/nanostructures with multi-functionalities such as high electrical conductivity and mechanical strength is still a long-standing challenge. In this work, TPP fabrication of arbitrary 3D micro/nanostructures using multi-walled carbon nanotube (MWNT)-thiolacrylate (MTA) composite resins has been developed. Up to 0.2 wt% MWNTs have been incorporated into thiol-acrylate resins to form highly stable and uniform composite photoresists without obvious degradation for one week at room temperature. Various functional 3D micro/nanostructures including woodpiles, micro-coils, spiral-like photonic crystals, suspended micro-bridges, micro-gears and complex micro-cars have been successfully fabricated. The MTA composite resin offers significant enhancements in electrical conductivity and mechanical strength, and on the same time, preserving high optical transmittance and flexibility. Tightly controlled alignment of MWNTs and the strong anisotropy effect were confirmed. Microelectronic devices including capacitors and resistors made of the MTA composite polymer were demonstrated. The 3D micro/nanofabrication using the MTA composite resins enables the precise 3D printing of micro/nanostructures of high electrical conductivity and mechanical strength, which is expected to lead a wide range of device applications, including micro/nano-electromechanical systems (MEMS/NEMS), integrated photonics and 3D electronics.

Application of BIM Technology in Prefabricated Buildings

NASA Astrophysics Data System (ADS)

Zhanglin, Guo; Si, Gao; Jun-e, Liu

2017-08-01

The development of fabricated buildings has become the main trend of the developm ent of modern construction industry in China. As the main tool of building information, BIM (b uilding information modeling) has greatly promoted the development of construction industry. Based on the review of the papers about the fabricated buildings and BIM technology in recent years, this paper analyzes the advantages of fabricated buildings and BIM technology, then exp lores the application of BIM technology in fabricated buildings. It aims to realize the rationaliz ation and scientification of project lifecycle management in fabricated construction project, and finally form a coherent information platform in the fabricated building.

Miniaturized multiplex label-free electronic chip for rapid nucleic acid analysis based on carbon nanotube nanoelectrode arrays

NASA Technical Reports Server (NTRS)

Koehne, Jessica E.; Chen, Hua; Cassell, Alan M.; Ye, Qi; Han, Jie; Meyyappan, Meyya; Li, Jun

2004-01-01

BACKGROUND: Reducing cost and time is the major concern in clinical diagnostics, particularly in molecular diagnostics. Miniaturization technologies have been recognized as promising solutions to provide low-cost microchips for diagnostics. With the recent advancement in nanotechnologies, it is possible to further improve detection sensitivity and simplify sample preparation by incorporating nanoscale elements in diagnostics devices. A fusion of micro- and nanotechnologies with biology has great potential for the development of low-cost disposable chips for rapid molecular analysis that can be carried out with simple handheld devices. APPROACH: Vertically aligned multiwalled carbon nanotubes (MWNTs) are fabricated on predeposited microelectrode pads and encapsulated in SiO2 dielectrics with only the very end exposed at the surface to form an inlaid nanoelectrode array (NEA). The NEA is used to collect the electrochemical signal associated with the target molecules binding to the probe molecules, which are covalently attached to the end of the MWNTs. CONTENT: A 3 x 3 microelectrode array is presented to demonstrate the miniaturization and multiplexing capability. A randomly distributed MWNT NEA is fabricated on each microelectrode pad. Selective functionalization of the MWNT end with a specific oligonucleotide probe and passivation of the SiO2 surface with ethylene glycol moieties are discussed. Ru(bpy)2+ -mediator-amplified guanine oxidation is used to directly measure the electrochemical signal associated with target molecules. SUMMARY: The discussed MWNT NEAs have ultrahigh sensitivity in direct electrochemical detection of guanine bases in the nucleic acid target. Fewer than approximately 1000 target nucleic acid molecules can be measured with a single microelectrode pad of approximately 20 x 20 microm2, which approaches the detection limit of laser scanners in fluorescence-based DNA microarray techniques. MWNT NEAs can be easily integrated with microelectronic circuitry and microfluidics for development of a fully automated system for rapid molecular analysis with minimum cost.

Developing Fabrication Technologies to Provide On Demand Manufacturing for Exploration of the Moon and Mars

NASA Technical Reports Server (NTRS)

Hammond, Monica S.; Good, James E.; Gilley, Scott D.; Howard, Richard W.

2006-01-01

NASA's human exploration initiative poses great opportunity and risk for manned and robotic missions to the Moon, Mars, and beyond. Engineers and scientists at the Marshall Space Flight Center (MSFC) are developing technologies for in situ fabrication capabilities during lunar and Martian surface operations utilizing provisioned and locally refined materials. Current fabrication technologies must be advanced to support the special demands and applications of the space exploration initiative such as power, weight and volume constraints. In Situ Fabrication and Repair (ISFR) will advance state-of-the-art technologies in support of habitat structure development, tools, and mechanical part fabrication. The repair and replacement of space mission components, such as life support items or crew exercise equipment, fall within the ISFR scope. This paper will address current fabrication technologies relative to meeting ISFR targeted capabilities, near-term advancement goals, and systematic evaluation of various fabrication methods.

Microelectronics and Computers in Medicine.

ERIC Educational Resources Information Center

Meindl, James D.

1982-01-01

The use of microelectronics and computers in medicine is reviewed, focusing on medical research; medical data collection, storage, retrieval, and manipulation; medical decision making; computed tomography; ultrasonic imaging; role in clinical laboratories; and use as adjuncts for diagnostic tests, monitors of critically-ill patients, and with the…

Porous Si nanowires for highly selective room-temperature NO2 gas sensing

NASA Astrophysics Data System (ADS)

Kwon, Yong Jung; Mirzaei, Ali; Gil Na, Han; Kang, Sung Yong; Choi, Myung Sik; Bang, Jae Hoon; Oum, Wansik; Kim, Sang Sub; Kim, Hyoun Woo

2018-07-01

We report the room-temperature sensing characteristics of Si nanowires (NWs) fabricated from p-Si wafers by a metal-assisted chemical etching method, which is a facile and low-cost method. X-ray diffraction was used to the the study crystallinity and phase formation of Si NWs, and product morphology was examined using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). After confirmation of Si NW formation via the SEM and TEM micrographs, sensing tests were carried out at room temperature, and it was found that the Si NW sensor prepared from Si wafers with a resistivity of 0.001–0.003 Ω.cm had the highest response to NO2 gas (Rg/Ra = 1.86 for 50 ppm NO2), with a fast response (15 s) and recovery (30 s) time. Furthermore, the sensor responses to SO2, toluene, benzene, H2, and ethanol were nearly negligible, demonstrating the excellent selectivity to NO2 gas. The gas-sensing mechanism is discussed in detail. The present sensor can operate at room temperature, and is compatible with the microelectronic fabrication process, demonstrating its promise for next-generation Si-based electronics fused with functional chemical sensors.

Porous Si nanowires for highly selective room-temperature NO2 gas sensing.

PubMed

Kwon, Yong Jung; Mirzaei, Ali; Na, Han Gil; Kang, Sung Yong; Choi, Myung Sik; Bang, Jae Hoon; Oum, Wansik; Kim, Sang Sub; Kim, Hyoun Woo

2018-07-20

We report the room-temperature sensing characteristics of Si nanowires (NWs) fabricated from p-Si wafers by a metal-assisted chemical etching method, which is a facile and low-cost method. X-ray diffraction was used to the the study crystallinity and phase formation of Si NWs, and product morphology was examined using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). After confirmation of Si NW formation via the SEM and TEM micrographs, sensing tests were carried out at room temperature, and it was found that the Si NW sensor prepared from Si wafers with a resistivity of 0.001-0.003 Ω.cm had the highest response to NO 2 gas (R g /R a  = 1.86 for 50 ppm NO 2 ), with a fast response (15 s) and recovery (30 s) time. Furthermore, the sensor responses to SO 2 , toluene, benzene, H 2 , and ethanol were nearly negligible, demonstrating the excellent selectivity to NO 2 gas. The gas-sensing mechanism is discussed in detail. The present sensor can operate at room temperature, and is compatible with the microelectronic fabrication process, demonstrating its promise for next-generation Si-based electronics fused with functional chemical sensors.

Roboter in der Raumfahrt

NASA Astrophysics Data System (ADS)

Hirzinger, G.

(Robots in space)—The paper emphasizes the enormous automation impact in industry caused by microelectronics, a "byproduct" of space-technology. The evolutionary stages of robotic are outlined and it is shown that there are a lot of reasons for more automation, artificial intelligence and robotic in space, too. The telemanipulator concept is compared with the industrial robot concept, both showing up an increasing degree of similarity. The state of the art in sensory systems is discussed. By hand of the typical operations needed in space as rendezvous, assembly and docking the required robot skill is indicated. As a conclusion it is stated that the basic technologies available with industrial robots today could solve a lot of space problems. What remains to do—apart of course from ongoing research—is better integration and adaption of industrial techniques to the need of space technology.

Planar Fully-Depleted-Silicon-On-Insulator technologies: Toward the 28 nm node and beyond

NASA Astrophysics Data System (ADS)

Doris, B.; DeSalvo, B.; Cheng, K.; Morin, P.; Vinet, M.

2016-03-01

This paper presents a comprehensive overview of the research done in the last decade on planar Fully-Depleted-Silicon-On-Insulator (FDSOI) technologies in the frame of the joint development program between IBM, ST Microelectronics and CEA-LETI. In particular, we review the technological developments ranging from substrate engineering to process modules that enable functionality and improve FDSOI performance over several generations. Various multi Vt integration schemes to maximize the benefits of the thin BOX FDSOI platform are discussed. Manufacturability as well as scalability concerns are highlighted and addressed. In addition, this work provides understanding of the performance/power trade-offs for FDSOI circuits and device variability. Finally, clear directions for future application-specific products are given, demonstrating that FDSOI is an attractive CMOS option for next generation high performance and low-power applications.

Intermetallic compounds in 3D integrated circuits technology: a brief review

PubMed Central

Annuar, Syahira; Mahmoodian, Reza; Hamdi, Mohd; Tu, King-Ning

2017-01-01

Abstract The high performance and downsizing technology of three-dimensional integrated circuits (3D-ICs) for mobile consumer electronic products have gained much attention in the microelectronics industry. This has been driven by the utilization of chip stacking by through-Si-via and solder microbumps. Pb-free solder microbumps are intended to replace conventional Pb-containing solder joints due to the rising awareness of environmental preservation. The use of low-volume solder microbumps has led to crucial constraints that cause several reliability issues, including excessive intermetallic compounds (IMCs) formation and solder microbump embrittlement due to IMCs growth. This article reviews technologies related to 3D-ICs, IMCs formation mechanisms and reliability issues concerning IMCs with Pb-free solder microbumps. Finally, future outlook on the potential growth of research in this area is discussed. PMID:29057024

Radiation effects in advanced microelectronics technologies

NASA Astrophysics Data System (ADS)

Johnston, A. H.

1998-06-01

The pace of device scaling has increased rapidly in recent years. Experimental CMOS devices have been produced with feature sizes below 0.1 /spl mu/m, demonstrating that devices with feature sizes between 0.1 and 0.25 /spl mu/m will likely be available in mainstream technologies after the year 2000. This paper discusses how the anticipated changes in device dimensions and design are likely to affect their radiation response in space environments. Traditional problems, such as total dose effects, SEU and latchup are discussed, along with new phenomena. The latter include hard errors from heavy ions (microdose and gate-rupture errors), and complex failure modes related to advanced circuit architecture. The main focus of the paper is on commercial devices, which are displacing hardened device technologies in many space applications. However, the impact of device scaling on hardened devices is also discussed.

Creating Nanotechnicians for the 21st Century Workplace

NASA Astrophysics Data System (ADS)

Burke, Michael; Jean, Kristi; Brown, Cheryl; Barrett, Rick; Leopold, Carrie

The North Dakota State College of Science (NDSCS) Nanoscience Technology Training Program was designed and implemented to meet the growing demand for technicians skilled in nanofabrication, surface analysis and production of various micro and nano-scale products. The program emphasizes hands-on training and utilizes a state-of-the-art Applied Science and Advanced Manufacturing Training Laboratory to develop the KSA’s (knowledge, skills, attitudes) needed by industry. Two-year Associate in Applied Science degree, diploma and certificate tracks are offered in four industry focus areas; nanotechnology, microelectronics technology, bio-fuels technology and biotechnology. Students learn to work in multidisciplinary teams on design, prototyping, analysis and manufacturing processes of products. The program also hosts an extensive hands-on outreach program which interacted with over 8000 secondary school science students and 500 teachers in the first 12 months of operation.

Proceedings of the International Conference on Vacuum Microelectronics (2nd) Held in Bath England on 24-26 July 1989: Vacuum Microelectronics

DTIC Science & Technology

1989-07-26

resulting Laplacian matrix. This © 1989 lOP Publishing Ltd l • m m i m mIlia ItoI 110 Vacuum microelectronics 89 approach does not easily yield accurate...Schottky diodes p-InP-Ag A L Musatov, S L Filippov and VL Korotkikh 57-60 Stimulated cold-cathode emission from metal electrodes coated with Langmuir...quantum transport K L Jensen and FA Buot 141-144 Silicon cold cathodes based on PIN diodes P A M van der Heide, G G P van Gorkom, A M E Hoeberechts, A A

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Ying; Li, Hong; Bridges, Denzel

We report that the continuing miniaturization of microelectronics is pushing advanced manufacturing into nanomanufacturing. Nanojoining is a bottom-up assembly technique that enables functional nanodevice fabrication with dissimilar nanoscopic building blocks and/or molecular components. Various conventional joining techniques have been modified and re-invented for joining nanomaterials. Our review surveys recent progress in nanojoining methods, as compared to conventional joining processes. Examples of nanojoining are given and classified by the dimensionality of the joining materials. At each classification, nanojoining is reviewed and discussed according to materials specialties, low dimensional processing features, energy input mechanisms and potential applications. The preparation of new intermetallicmore » materials by reactive nanoscale multilayer foils based on self-propagating high-temperature synthesis is highlighted. This review will provide insight into nanojoining fundamentals and innovative applications in power electronics packaging, plasmonic devices, nanosoldering for printable electronics, 3D printing and space manufacturing.« less

Electrical-transport properties and microwave device performance of sputtered TlCaBaCuO superconducting thin films

NASA Technical Reports Server (NTRS)

Subramanyam, G.; Kapoor, V. J.; Chorey, C. M.; Bhasin, K. B.

1992-01-01

The paper describes the processing and electrical transport measurements for achieving reproducible high-Tc and high-Jc sputtered TlCaBaCuO thin films on LaAlO3 substrates, for microelectronic applications. The microwave properties of TlCaBaCuO thin films were investigated by designing, fabricating, and characterizing microstrip ring resonators with a fundamental resonance frequency of 12 GHz on 10-mil-thick LaAlO3 substrates. Typical unloaded quality factors for a ring resonator with a superconducting ground plane of 0.3 micron-thickness and a gold ground plane of 1-micron-thickness were above 1500 at 65 K. Typical values of penetration depth at 0 K in the TlCaBaCuO thin films were between 7000 and 8000 A.

Miniaturized flow injection analysis system

DOEpatents

Folta, James A.

1997-01-01

A chemical analysis technique known as flow injection analysis, wherein small quantities of chemical reagents and sample are intermixed and reacted within a capillary flow system and the reaction products are detected optically, electrochemically, or by other means. A highly miniaturized version of a flow injection analysis system has been fabricated utilizing microfabrication techniques common to the microelectronics industry. The microflow system uses flow capillaries formed by etching microchannels in a silicon or glass wafer followed by bonding to another wafer, commercially available microvalves bonded directly to the microflow channels, and an optical absorption detector cell formed near the capillary outlet, with light being both delivered and collected with fiber optics. The microflow system is designed mainly for analysis of liquids and currently measures 38.times.25.times.3 mm, but can be designed for gas analysis and be substantially smaller in construction.

Enrichment of putative stem cells from adipose tissue using dielectrophoretic field-flow fractionation

PubMed Central

Vykoukal, Jody; Vykoukal, Daynene M.; Freyberg, Susanne; Alt, Eckhard U.; Gascoyne, Peter R. C.

2009-01-01

We have applied the microfluidic cell separation method of dielectrophoretic field-flow fractionation (DEP-FFF) to the enrichment of a putative stem cell population from an enzyme-digested adipose tissue derived cell suspension. A DEP-FFF separator device was constructed using a novel microfluidic-microelectronic hybrid flex-circuit fabrication approach that is scaleable and anticipates future low-cost volume manufacturing. We report the separation of a nucleated cell fraction from cell debris and the bulk of the erythrocyte population, with the relatively rare (<2% starting concentration) NG2-positive cell population (pericytes and/or putative progenitor cells) being enriched up to 14-fold. This work demonstrates a potential clinical application for DEP-FFF and further establishes the utility of the method for achieving label-free fractionation of cell subpopulations. PMID:18651083

Layered Metals Fabrication Technology Development for Support of Lunar Exploration at NASA/MSFC

NASA Technical Reports Server (NTRS)

Cooper, Kenneth G.; Good, James E.; Gilley, Scott D.

2007-01-01

NASA's human exploration initiative poses great opportunity and risk for missions to the Moon and beyond. In support of these missions, engineers and scientists at the Marshall Space Flight Center are developing technologies for ground-based and in-situ fabrication capabilities utilizing provisioned and locally-refined materials. Development efforts are pushing state-of-the art fabrication technologies to support habitat structure development, tools and mechanical part fabrication, as well as repair and replacement of ground support and space mission hardware such as life support items, launch vehicle components and crew exercise equipment. This paper addresses current fabrication technologies relative to meeting targeted capabilities, near term advancement goals, and process certification of fabrication methods.

76 FR 10395 - BreconRidge Manufacturing Solutions, Now Known as Sanmina-SCI Corporation, Division...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-02-24

... Solutions, Now Known as Sanmina-SCI Corporation, Division Optoelectronic and Microelectronic Design and Manufacturing, a Subsidiary of Sanmina-SCI Corporation, Including On- Site Leased Workers From Kelly Services... Manufacturing Solutions, now known as Sanmina-SCI Corporation, Division Optoelectronic and Microelectronic...

Mask industry assessment: 2008

NASA Astrophysics Data System (ADS)

Hughes, Greg; Yun, Henry

2008-10-01

Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by David Powell Consulting to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of semiconductor company mask technologists, merchant mask suppliers, and industry equipment makers. This year's assessment is the seventh in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey is basically the same as the 2005 through 2007 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry.

Mask industry assessment trend analysis: 2010

NASA Astrophysics Data System (ADS)

Hughes, Greg; Yun, Henry

2010-05-01

Microelectronics industry leaders consistently cite the cost and cycle time of mask technology and mask supply as top critical issues. A survey was designed with input from semiconductor company mask technologists and merchant mask suppliers and support from SEMATECH to gather information about the mask industry as an objective assessment of its overall condition. This year's assessment was the eighth in the current series of annual reports. Its data were presented in detail at BACUS, and the detailed trend analysis is presented at EMLC. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. Its results will be used to guide future investments on critical path issues. This year's survey is basically the same as the surveys in 2005 through 2009. Questions are grouped into six categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that creates a detailed profile of both the business and technical status of the critical mask industry.

The 2002 to 2010 mask survey trend analysis

NASA Astrophysics Data System (ADS)

Hughes, Greg; Chan, David

2011-03-01

Microelectronics industry leaders consistently cite the cost and cycle time of mask technology and mask supply as top critical issues. A survey was designed with input from semiconductor company mask technologists and merchant mask suppliers and support from SEMATECH to gather information about the mask industry as an objective assessment of its overall condition. This year's assessment was the ninth in the current series of annual reports. Its data were presented in detail at BACUS, and the detailed trend analysis is presented at EMLC. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. Results will be used to guide future investments in critical path issues. This year's survey is basically the same as the 2005 through 2010 surveys. Questions are grouped into six categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category are multiple questions that ultimately create a detailed profile of both the business and technical status of the critical mask industry.

Coffee-can-sized spacecraft

NASA Technical Reports Server (NTRS)

Jones, Ross M.

1988-01-01

The current status and potential scientific applications of intelligent 1-5-kg projectiles being developed by SDIO and DARPA for military missions are discussed. The importance of advanced microelectronics for such small spacecraft is stressed, and it is pointed out that both chemical rockets and EM launchers are currently under consideration for these lightweight exoatmospheric projectiles (LEAPs). Long-duration power supply is identified as the primary technological change required if LEAPs are to be used for interplanetary scientific missions, and the design concept of a solar-powered space-based railgun to accelerate LEAPs on such missions is considered.

Micro-Scale Avionics Thermal Management

NASA Technical Reports Server (NTRS)

Moran, Matthew E.

2001-01-01

Trends in the thermal management of avionics and commercial ground-based microelectronics are converging, and facing the same dilemma: a shortfall in technology to meet near-term maximum junction temperature and package power projections. Micro-scale devices hold the key to significant advances in thermal management, particularly micro-refrigerators/coolers that can drive cooling temperatures below ambient. A microelectromechanical system (MEMS) Stirling cooler is currently under development at the NASA Glenn Research Center to meet this challenge with predicted efficiencies that are an order of magnitude better than current and future thermoelectric coolers.