Neutron Spectroscopy Using LiF Thin-Film Detectors
2013-03-01
Michael A. Ford, BS Second Lieutenant, USAF Approved: LTC Stephen R. McHale (Chairman) Date John W. McClory, PhD (Member) Date Justin A. Clinton, PhD...Member) Date AFIT-ENP-13-M-10 Abstract A stacked array of segmented micro-structured semiconductor neutron detectors (MSNDs) has been fabricated to...conveniently available from radioisotopes , reactions involving incident protons, deuterons, and so on must rely on artificially accelerated particles [12
Application and Development of Microstructured Solid-State Neutron Detectors
NASA Astrophysics Data System (ADS)
Weltz, Adam D.
Neutron detectors are useful for a number of applications, including the identification of nuclear weapons, radiation dosimetry, and nuclear reactor monitoring, among others. Microstructured solid-state neutron detectors (SSNDs) developed at RPI have the potential to reinvent a variety of neutron detection systems due to their compact size, zero bias requirement, competitive thermal neutron detection efficiency (up to 29%), low gamma sensitivity (below the PNNL recommendation of 10-6 corresponding to a 10 mR/hr gamma exposure), and scalability to large surface areas with a single preamplifier (<20% loss in relative efficiency from 1 to 16 cm2). These microstructured SSNDs have semiconducting substrate etched with a repeated, three-dimensional microstructure of high aspect ratio holes filled with 10B. MCNP simulations optimized the dimensions of each microstructure geometry for each detector application, improving the overall performance. This thesis outlines the development of multiple, novel neutron detection applications using microstructured SSNDs developed at RPI. The Directional and Spectral Neutron Detection System (DSNDS) is a modular and portable system that uses rings of microstructured SSNDs embedded in polyethylene in order to gather real-time information about the directionality and spectrum of an unidentified neutron source. This system can be used to identify the presence of diverted special nuclear material (SNM), determine its position, and gather spectral information in real-time. The compact and scalable zero-bias SSNDs allow for customization and modularity of the detector array, which provides design flexibility and enhanced portability. Additionally, a real-time personal neutron dosimeter is a wearable device that uses a combination of fast and thermal microstructured SSNDs in order to determine an individual's neutron dose rate. This system demonstrates that neutron detection systems utilizing microstructured SSNDs are applicable for personal neutron dosimetry. The development of these systems using the compact, zero-bias microstructured SSNDs lays the groundwork for a new generation of neutron detection tools, outlines the challenges and design considerations associated with the implementation of these devices, and demonstrates the value that these detectors bring to the future of neutron detection systems.
Han, Young-Soo; Mao, Xiadong; Jang, Jinsung
2013-11-01
The nano-sized microstructures in Fe-Cr oxide dispersion strengthened steel for Gen IV in-core applications were studied using small angle neutron scattering. The oxide dispersion strengthened steel was manufactured through hot isostatic pressing with various chemical compositions and fabrication conditions. Small angle neutron scattering experiments were performed using a 40 m small angle neutron scattering instrument at HANARO. Nano sized microstructures, namely, yttrium oxides and Cr-oxides were quantitatively analyzed by small angle neutron scattering. The yttrium oxides and Cr-oxides were also observed by transmission electron microscopy. The microstructural analysis results from small angle neutron scattering were compared with those obtained by transmission electron microscopy. The effects of the chemical compositions and fabrication conditions on the microstructure were investigated in relation to the quantitative microstructural analysis results obtained by small angle neutron scattering. The volume fraction of Y-oxide increases after fabrication, and this result is considered to be due to the formation of non-stochiometric Y-Ti-oxides.
Yeo, So Young; Park, Sangsik; Yi, Yeon Jin; Kim, Do Hwan; Lim, Jung Ah
2017-12-13
A highly sensitive pressure sensor based on printed organic transistors with three-dimensionally self-organized organic semiconductor microstructures (3D OSCs) was demonstrated. A unique organic transistor with semiconductor channels positioned at the highest summit of printed cylindrical microstructures was achieved simply by printing an organic semiconductor and polymer blend on the plastic substrate without the use of additional etching or replication processes. A combination of the printed organic semiconductor microstructure and an elastomeric top-gate dielectric resulted in a highly sensitive organic field-effect transistor (FET) pressure sensor with a high pressure sensitivity of 1.07 kPa -1 and a rapid response time of <20 ms with a high reliability over 1000 cycles. The flexibility and high performance of the 3D OSC FET pressure sensor were exploited in the successful application of our sensors to real-time monitoring of the radial artery pulse, which is useful for healthcare monitoring, and to touch sensing in the e-skin of a realistic prosthetic hand.
NASA Astrophysics Data System (ADS)
Li, Kexue; Liu, Lei; Yu, Peter Y.; Chen, Xiaobo; Shen, D. Z.
2016-05-01
By converting the energy of nuclear radiation to excited electrons and holes, semiconductor detectors have provided a highly efficient way for detecting them, such as photons or charged particles. However, for detecting the radiated neutrons, those conventional semiconductors hardly behave well, as few of them possess enough capability for capturing these neutral particles. While the element Gd has the highest nuclear cross section, here for searching proper neutron-detecting semiconductors, we investigate theoretically the Gd chalcogenides whose electronic band structures have never been characterized clearly. Among them, we identify that γ-phase Gd2Se3 should be the best candidate for neutron detecting since it possesses not only the right bandgap of 1.76 eV for devices working under room temperature but also the desired indirect gap nature for charge carriers surviving longer. We propose further that semiconductor neutron detectors with single-neutron sensitivity can be realized with such a Gd-chalcogenide on the condition that their crystals can be grown with good quality.
Li, Kexue; Liu, Lei; Yu, Peter Y; Chen, Xiaobo; Shen, D Z
2016-05-11
By converting the energy of nuclear radiation to excited electrons and holes, semiconductor detectors have provided a highly efficient way for detecting them, such as photons or charged particles. However, for detecting the radiated neutrons, those conventional semiconductors hardly behave well, as few of them possess enough capability for capturing these neutral particles. While the element Gd has the highest nuclear cross section, here for searching proper neutron-detecting semiconductors, we investigate theoretically the Gd chalcogenides whose electronic band structures have never been characterized clearly. Among them, we identify that γ-phase Gd2Se3 should be the best candidate for neutron detecting since it possesses not only the right bandgap of 1.76 eV for devices working under room temperature but also the desired indirect gap nature for charge carriers surviving longer. We propose further that semiconductor neutron detectors with single-neutron sensitivity can be realized with such a Gd-chalcogenide on the condition that their crystals can be grown with good quality.
Neutron and gamma irradiation effects on power semiconductor switches
NASA Technical Reports Server (NTRS)
Schwarze, G. E.; Frasca, A. J.
1990-01-01
The performance characteristics of high-power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.
Neutron and gamma irradiation effects on power semiconductor switches
NASA Technical Reports Server (NTRS)
Schwarze, G. E.; Frasca, A. J.
1990-01-01
The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.
Solid state neutron detector array
Seidel, John G.; Ruddy, Frank H.; Brandt, Charles D.; Dulloo, Abdul R.; Lott, Randy G.; Sirianni, Ernest; Wilson, Randall O.
1999-01-01
A neutron detector array is capable of measuring a wide range of neutron fluxes. The array includes multiple semiconductor neutron detectors. Each detector has a semiconductor active region that is resistant to radiation damage. In one embodiment, the array preferably has a relatively small size, making it possible to place the array in confined locations. The ability of the array to detect a wide range of neutron fluxes is highly advantageous for many applications such as detecting neutron flux during start up, ramp up and full power of nuclear reactors.
Microstructural evolution of neutron irradiated 3C-SiC
DOE Office of Scientific and Technical Information (OSTI.GOV)
Sprouster, David J.; Koyanagi, Takaaki; Dooryhee, Eric
The microstructural response of neutron irradiated 3C-SiC have been investigated over a wide irradiation temperature and fluence range via qualitative and quantitative synchrotron-based X-ray diffraction characterization. Here, we identify several neutron fluence- and irradiation temperature-dependent changes in the microstructure, and directly highlight the specific defects introduced through the course of irradiation. By quantifying the microstructure, we aim to develop a more detailed understanding of the radiation response of SiC. Such studies are important to build mechanistic models of material performance and to understand the susceptibility of various microstructures to radiation damage for advanced energy applications.
Microstructural evolution of neutron irradiated 3C-SiC
Sprouster, David J.; Koyanagi, Takaaki; Dooryhee, Eric; ...
2017-03-18
The microstructural response of neutron irradiated 3C-SiC have been investigated over a wide irradiation temperature and fluence range via qualitative and quantitative synchrotron-based X-ray diffraction characterization. Here, we identify several neutron fluence- and irradiation temperature-dependent changes in the microstructure, and directly highlight the specific defects introduced through the course of irradiation. By quantifying the microstructure, we aim to develop a more detailed understanding of the radiation response of SiC. Such studies are important to build mechanistic models of material performance and to understand the susceptibility of various microstructures to radiation damage for advanced energy applications.
Layered semiconductor neutron detectors
Mao, Samuel S; Perry, Dale L
2013-12-10
Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Doan, T. C.; Li, J.; Lin, J. Y.
2016-07-15
Solid-state neutron detectors with high performance are highly sought after for the detection of fissile materials. However, direct-conversion neutron detectors based on semiconductors with a measureable efficiency have not been realized. We report here the first successful demonstration of a direct-conversion semiconductor neutron detector with an overall detection efficiency for thermal neutrons of 4% and a charge collection efficiency as high as 83%. The detector is based on a 2.7 μm thick {sup 10}B-enriched hexagonal boron nitride (h-BN) epitaxial layer. The results represent a significant step towards the realization of practical neutron detectors based on h-BN epilayers. Neutron detectors basedmore » on h-BN are expected to possess all the advantages of semiconductor devices including wafer-scale processing, compact size, light weight, and ability to integrate with other functional devices.« less
McGregor, Douglas S.; Shultis, John K.; Rice, Blake B.; McNeil, Walter J.; Solomon, Clell J.; Patterson, Eric L.; Bellinger, Steven L.
2010-12-21
Non-streaming high-efficiency perforated semiconductor neutron detectors, method of making same and measuring wands and detector modules utilizing same are disclosed. The detectors have improved mechanical structure, flattened angular detector responses, and reduced leakage current. A plurality of such detectors can be assembled into imaging arrays, and can be used for neutron radiography, remote neutron sensing, cold neutron imaging, SNM monitoring, and various other applications.
Solid state neutron detector array
Seidel, J.G.; Ruddy, F.H.; Brandt, C.D.; Dulloo, A.R.; Lott, R.G.; Sirianni, E.; Wilson, R.O.
1999-08-17
A neutron detector array is capable of measuring a wide range of neutron fluxes. The array includes multiple semiconductor neutron detectors. Each detector has a semiconductor active region that is resistant to radiation damage. In one embodiment, the array preferably has a relatively small size, making it possible to place the array in confined locations. The ability of the array to detect a wide range of neutron fluxes is highly advantageous for many applications such as detecting neutron flux during start up, ramp up and full power of nuclear reactors. 7 figs.
Hexagonal boron nitride neutron detectors with high detection efficiencies
DOE Office of Scientific and Technical Information (OSTI.GOV)
Maity, A.; Grenadier, S. J.; Li, J.
Here, neutron detectors fabricated from 10B enriched hexagonal boron nitride (h- 10BN or h-BN) epilayers have demonstrated the highest thermal neutron detection efficiency among solid-state neutron detectors to date at about 53%. In this work, photoconductive-like vertical detectors with a detection area of 1 × 1 mm 2 were fabricated from 50 μm thick free-standing h-BN epilayers using Ni/Au and Ti/Al bilayers as ohmic contacts. Leakage currents, mobility-lifetime (μτ) products under UV photoexcitation, and neutron detection efficiencies have been measured for a total of 16 different device configurations. The results have unambiguously identified that detectors incorporating the Ni/Au bilayer onmore » both surfaces as ohmic contacts and using the negatively biased top surface for neutron irradiation are the most desired device configurations. It was noted that high growth temperatures of h- 10BN epilayers on sapphire substrates tend to yield a higher concentration of oxygen impurities near the bottom surface, leading to a better device performance by the chosen top surface for irradiation than by the bottom. Preferential scattering of oxygen donors tends to reduce the mobility of holes more than that of electrons, making the biasing scheme with the ability of rapidly extracting holes at the irradiated surface while leaving the electrons to travel a large average distance inside the detector at a preferred choice. When measured against a calibrated 6LiF filled micro-structured semiconductor neutron detector, it was shown that the optimized configuration has pushed the detection efficiency of h-BN neutron detectors to 58%. These detailed studies also provided a better understanding of growth-mediated impurities in h-BN epilayers and their effects on the charge collection and neutron detection efficiencies.« less
Hexagonal boron nitride neutron detectors with high detection efficiencies
NASA Astrophysics Data System (ADS)
Maity, A.; Grenadier, S. J.; Li, J.; Lin, J. Y.; Jiang, H. X.
2018-01-01
Neutron detectors fabricated from 10B enriched hexagonal boron nitride (h-10BN or h-BN) epilayers have demonstrated the highest thermal neutron detection efficiency among solid-state neutron detectors to date at about 53%. In this work, photoconductive-like vertical detectors with a detection area of 1 × 1 mm2 were fabricated from 50 μm thick free-standing h-BN epilayers using Ni/Au and Ti/Al bilayers as ohmic contacts. Leakage currents, mobility-lifetime (μτ) products under UV photoexcitation, and neutron detection efficiencies have been measured for a total of 16 different device configurations. The results have unambiguously identified that detectors incorporating the Ni/Au bilayer on both surfaces as ohmic contacts and using the negatively biased top surface for neutron irradiation are the most desired device configurations. It was noted that high growth temperatures of h-10BN epilayers on sapphire substrates tend to yield a higher concentration of oxygen impurities near the bottom surface, leading to a better device performance by the chosen top surface for irradiation than by the bottom. Preferential scattering of oxygen donors tends to reduce the mobility of holes more than that of electrons, making the biasing scheme with the ability of rapidly extracting holes at the irradiated surface while leaving the electrons to travel a large average distance inside the detector at a preferred choice. When measured against a calibrated 6LiF filled micro-structured semiconductor neutron detector, it was shown that the optimized configuration has pushed the detection efficiency of h-BN neutron detectors to 58%. These detailed studies also provided a better understanding of growth-mediated impurities in h-BN epilayers and their effects on the charge collection and neutron detection efficiencies.
Hexagonal boron nitride neutron detectors with high detection efficiencies
Maity, A.; Grenadier, S. J.; Li, J.; ...
2018-01-23
Here, neutron detectors fabricated from 10B enriched hexagonal boron nitride (h- 10BN or h-BN) epilayers have demonstrated the highest thermal neutron detection efficiency among solid-state neutron detectors to date at about 53%. In this work, photoconductive-like vertical detectors with a detection area of 1 × 1 mm 2 were fabricated from 50 μm thick free-standing h-BN epilayers using Ni/Au and Ti/Al bilayers as ohmic contacts. Leakage currents, mobility-lifetime (μτ) products under UV photoexcitation, and neutron detection efficiencies have been measured for a total of 16 different device configurations. The results have unambiguously identified that detectors incorporating the Ni/Au bilayer onmore » both surfaces as ohmic contacts and using the negatively biased top surface for neutron irradiation are the most desired device configurations. It was noted that high growth temperatures of h- 10BN epilayers on sapphire substrates tend to yield a higher concentration of oxygen impurities near the bottom surface, leading to a better device performance by the chosen top surface for irradiation than by the bottom. Preferential scattering of oxygen donors tends to reduce the mobility of holes more than that of electrons, making the biasing scheme with the ability of rapidly extracting holes at the irradiated surface while leaving the electrons to travel a large average distance inside the detector at a preferred choice. When measured against a calibrated 6LiF filled micro-structured semiconductor neutron detector, it was shown that the optimized configuration has pushed the detection efficiency of h-BN neutron detectors to 58%. These detailed studies also provided a better understanding of growth-mediated impurities in h-BN epilayers and their effects on the charge collection and neutron detection efficiencies.« less
Boron selenide semiconductor detectors for thermal neutron counting
NASA Astrophysics Data System (ADS)
Kargar, Alireza; Tower, Joshua; Cirignano, Leonard; Shah, Kanai
2013-09-01
Thermal neutron detectors in planar configuration were fabricated from B2Se3 (Boron Selenide) crystals grown at RMD Inc. All fabricated semiconductor devices were characterized for the current-voltage (I-V) characteristic and neutron counting measurement. In this study, the resistivity of crystals is reported and the collected pulse height spectra are presented for devices irradiated with the 241AmBe neutron source. Long-term stability of the B2Se3 devices for neutron detection under continuous bias and without being under continuous bias was investigated and the results are reported. The B2Se3 devices showed response to thermal neutrons of the 241AmBe source.
Coated semiconductor devices for neutron detection
Klann, Raymond T.; McGregor, Douglas S.
2002-01-01
A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and electrical settings, neutrons at specific energies can be detected. The coated neutron detector is capable of performing real-time neutron radiography in high gamma fields, digital fast neutron radiography, fissile material identification, and basic neutron detection particularly in high radiation fields.
Bulk semiconducting scintillator device for radiation detection
Stowe, Ashley C.; Burger, Arnold; Groza, Michael
2016-08-30
A bulk semiconducting scintillator device, including: a Li-containing semiconductor compound of general composition Li-III-VI.sub.2, wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and, in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Xie, Qingge; Song, Gian; Gorti, Sarma B.
Bragg-edge imaging, which is also known as neutron radiography, has recently emerged as a novel crystalline characterization technique. Modelling of this novel technique by incorporating various features of the underlying microstructure (including the crystallographic texture, the morphological texture, and the grain size) of the material remains a subject of considerable research and development. In this paper, Inconel 718 samples made by additive manufacturing were investigated by neutron diffraction and neutron radiography techniques. The specimen features strong morphological and crystallographic textures and a highly heterogeneous microstructure. A 3D statistical full-field model is introduced by taking details of the microstructure into accountmore » to understand the experimental neutron radiography results. The Bragg-edge imaging and the total cross section were calculated based on the neutron transmission physics. A good match was obtained between the model predictions and experimental results at different incident beam angles with respect to the sample build direction. The current theoretical approach has the ability to incorporate 3D spatially resolved microstructural heterogeneity information and shows promise in understanding the 2D neutron radiography of bulk samples. With further development to incorporate the heterogeneity in lattice strain in the model, it can be used as a powerful tool in the future to better understand the neutron radiography data.« less
Xie, Qingge; Song, Gian; Gorti, Sarma B.; ...
2018-02-21
Bragg-edge imaging, which is also known as neutron radiography, has recently emerged as a novel crystalline characterization technique. Modelling of this novel technique by incorporating various features of the underlying microstructure (including the crystallographic texture, the morphological texture, and the grain size) of the material remains a subject of considerable research and development. In this paper, Inconel 718 samples made by additive manufacturing were investigated by neutron diffraction and neutron radiography techniques. The specimen features strong morphological and crystallographic textures and a highly heterogeneous microstructure. A 3D statistical full-field model is introduced by taking details of the microstructure into accountmore » to understand the experimental neutron radiography results. The Bragg-edge imaging and the total cross section were calculated based on the neutron transmission physics. A good match was obtained between the model predictions and experimental results at different incident beam angles with respect to the sample build direction. The current theoretical approach has the ability to incorporate 3D spatially resolved microstructural heterogeneity information and shows promise in understanding the 2D neutron radiography of bulk samples. With further development to incorporate the heterogeneity in lattice strain in the model, it can be used as a powerful tool in the future to better understand the neutron radiography data.« less
Review of current neutron detection systems for emergency response
Mukhopadhyay, Sanjoy; Maurer, Richard; Guss, Paul; ...
2014-09-05
Neutron detectors are utilized in a myriad of applications—from safeguarding special nuclear materials (SNM) to determining lattice spacing in soft materials. The transformational changes taking place in neutron detection and imaging techniques in the last few years are largely being driven by the global shortage of helium-3 ( 3He). This article reviews the status of neutron sensors used specifically for SNM detection in radiological emergency response. These neutron detectors must be highly efficient, be rugged, have fast electronics to measure neutron multiplicity, and be capable of measuring direction of the neutron sources and possibly image them with high spatial resolution.more » Neutron detection is an indirect physical process: neutrons react with nuclei in materials to initiate the release of one or more charged particles that produce electric signals that can be processed by the detection system. Therefore, neutron detection requires conversion materials as active elements of the detection system; these materials may include boron-10 ( 10B), lithium-6 ( 6Li), and gadollinium-157 ( 157Gd), to name a few, but the number of materials available for neutron detection is limited. However, in recent years, pulse-shape-discriminating plastic scintillators, scintillators made of helium-4 ( 4He) under high pressure, pillar and trench semiconductor diodes, and exotic semiconductor neutron detectors made from uranium oxide and other materials have widely expanded the parameter space in neutron detection methodology. In this article we will pay special attention to semiconductor-based neutron sensors. Finally, modern microfabricated nanotubes covered inside with neutron converter materials and with very high aspect ratios for better charge transport will be discussed.« less
Review of current neutron detection systems for emergency response
NASA Astrophysics Data System (ADS)
Mukhopadhyay, Sanjoy; Maurer, Richard; Guss, Paul; Kruschwitz, Craig
2014-09-01
Neutron detectors are used in a myriad of applications—from safeguarding special nuclear materials (SNM) to determining lattice spacing in soft materials. The transformational changes taking place in neutron detection and imaging techniques in the last few years are largely being driven by the global shortage of helium-3 (3He). This article reviews the status of neutron sensors used specifically for SNM detection in radiological emergency response. These neutron detectors must be highly efficient, be rugged, have fast electronics to measure neutron multiplicity, and be capable of measuring direction of the neutron sources and possibly image them with high spatial resolution. Neutron detection is an indirect physical process: neutrons react with nuclei in materials to initiate the release of one or more charged particles that produce electric signals that can be processed by the detection system. Therefore, neutron detection requires conversion materials as active elements of the detection system; these materials may include boron-10 (10B), lithium-6 (6Li), and gadollinium-157 (157Gd), to name a few, but the number of materials available for neutron detection is limited. However, in recent years, pulse-shape-discriminating plastic scintillators, scintillators made of helium-4 (4He) under high pressure, pillar and trench semiconductor diodes, and exotic semiconductor neutron detectors made from uranium oxide and other materials have widely expanded the parameter space in neutron detection methodology. In this article we will pay special attention to semiconductor-based neutron sensors. Modern microfabricated nanotubes covered inside with neutron converter materials and with very high aspect ratios for better charge transport will be discussed.
Lithium and boron based semiconductors for thermal neutron counting
NASA Astrophysics Data System (ADS)
Kargar, Alireza; Tower, Joshua; Hong, Huicong; Cirignano, Leonard; Higgins, William; Shah, Kanai
2011-09-01
Thermal neutron detectors in planar configuration were fabricated from LiInSe2 and B2Se3 crystals grown at RMD Inc. All fabricated semiconductor devices were characterized for the current-voltage (I-V) characteristic and neutron counting measurement. Pulse height spectra were collected from 241AmBe (neutron source on all samples), as well as 137Cs and 60Co gamma ray sources. In this study, the resistivity of all crystals is reported and the collected pulse height spectra are presented for fabricated devices. Note that, the 241AmBe neutron source was custom designed with polyethylene around the source as the neutron moderator, mainly to thermalize the fast neutrons before reaching the detectors. Both LiInSe2 and B2Se3 devices showed response to thermal neutrons of the 241AmBe source.
Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches
NASA Technical Reports Server (NTRS)
Schwarze, G. E.; Frasca, A. J.
1991-01-01
The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.
Detection of fast neutrons from shielded nuclear materials using a semiconductor alpha detector.
Pöllänen, R; Siiskonen, T
2014-08-01
The response of a semiconductor alpha detector to fast (>1 MeV) neutrons was investigated by using measurements and simulations. A polyethylene converter was placed in front of the detector to register recoil protons generated by elastic collisions between neutrons and hydrogen nuclei of the converter. The developed prototype equipment was tested with shielded radiation sources. The low background of the detector and insensitivity to high-energy gamma rays above 1 MeV are advantages when the detection of neutron-emitting nuclear materials is of importance. In the case of a (252)Cf neutron spectrum, the intrinsic efficiency of fast neutron detection was determined to be 2.5×10(-4), whereas three-fold greater efficiency was obtained for a (241)AmBe neutron spectrum. Copyright © 2014 Elsevier Ltd. All rights reserved.
The Los Alamos Neutron Science Center Spallation Neutron Sources
NASA Astrophysics Data System (ADS)
Nowicki, Suzanne F.; Wender, Stephen A.; Mocko, Michael
The Los Alamos Neutron Science Center (LANSCE) provides the scientific community with intense sources of neutrons, which can be used to perform experiments supporting civilian and national security research. These measurements include nuclear physics experiments for the defense program, basic science, and the radiation effect programs. This paper focuses on the radiation effects program, which involves mostly accelerated testing of semiconductor parts. When cosmic rays strike the earth's atmosphere, they cause nuclear reactions with elements in the air and produce a wide range of energetic particles. Because neutrons are uncharged, they can reach aircraft altitudes and sea level. These neutrons are thought to be the most important threat to semiconductor devices and integrated circuits. The best way to determine the failure rate due to these neutrons is to measure the failure rate in a neutron source that has the same spectrum as those produced by cosmic rays. Los Alamos has a high-energy and a low-energy neutron source for semiconductor testing. Both are driven by the 800-MeV proton beam from the LANSCE accelerator. The high-energy neutron source at the Weapons Neutron Research (WNR) facility uses a bare target that is designed to produce fast neutrons with energies from 100 keV to almost 800 MeV. The measured neutron energy distribution from WNR is very similar to that of the cosmic-ray-induced neutrons in the atmosphere. However, the flux provided at the WNR facility is typically 5×107 times more intense than the flux of the cosmic-ray-induced neutrons. This intense neutron flux allows testing at greatly accelerated rates. An irradiation test of less than an hour is equivalent to many years of neutron exposure due to cosmic-ray neutrons. The low-energy neutron source is located at the Lujan Neutron Scattering Center. It is based on a moderated source that provides useful neutrons from subthermal energies to ∼100 keV. The characteristics of these sources, and ongoing industry program are described in this paper.
Preparation methodologies and nano/microstructural evaluation of metal/semiconductor thin films.
Chen, Zhiwen; Jiao, Zheng; Wu, Minghong; Shek, Chan-Hung; Wu, C M Lawrence; Lai, Joseph K L
2012-01-01
Metal/semiconductor thin films are a class of unique materials that are widespread technological applications, particularly in the field of microelectronic devices. Assessment strategies of fractal and tures are of fundamental importance in the development of nano/microdevices. This review presents the preparation methodologies and nano/microstructural evaluation of metal/semiconductor thin films including Au/Ge bilayer films and Pd-Ge alloy thin films, which show in the form of fractals and nanocrystals. Firstly, the extended version of Au/Ge thin films for the fractal crystallization of amorphous Ge and the formation of nanocrystals developed with improved micro- and nanostructured features are described in Section 2. Secondly, the nano/microstructural characteristics of Pd/Ge alloy thin films during annealing have been investigated in detail and described in Section 3. Finally, we will draw the conclusions from the present work as shown in Section 4. It is expected that the preparation methodologies developed and the knowledge of nano/microstructural evolution gained in metal/semiconductor thin films, including Au/Ge bilayer films and Pd-Ge alloy thin films, will provide an important fundamental basis underpinning further interdisciplinary research in these fields such as physics, chemistry, materials science, and nanoscience and nanotechnology, leading to promising exciting opportunities for future technological applications involving these thin films.
Love, T.A.; Murray, R.B.
1964-04-14
A fast neutron spectrometer was designed, which utilizes a pair of opposed detectors having a layer of /sup 6/LiF between to produce alpha and T pair for each neutron captured to provide signals, which, when combined, constitute a measure of neutron energy. (AEC)
NASA Astrophysics Data System (ADS)
Périgo, Élio A.; Titov, Ivan; Weber, Raoul; Mettus, Denis; Peral, Inma; Vallcorba, Oriol; Honecker, Dirk; Feoktystov, Artem; Michels, Andreas
2018-03-01
We have investigated the effect of the annealing conditions (heating rate and temperature) on the magnetic microstructure of sintered Nd-Fe-B magnets by means of magnetometry, scanning electron microscopy, high-energy synchrotron x-ray diffraction, and small-angle neutron scattering (SANS). While the temperature treatment has a strong effect on the coercivity (reduction by about 50% on annealing), the associated changes in the microstructure do surprisingly not show up (or at best only very weakly) in the neutron-scattering signal, which probes a mesoscopic real-space length scale ranging between about 1–300 nm. On the other hand, the x-ray data reveal microstructural changes in the Nd-rich phases, presumably due to modifications in grain-boundary regions. Moreover, we observe an unusual diamond-shaped angular anisotropy in the SANS cross section, which strongly points towards the existence of texture in the nuclear microstructure.
Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches
NASA Technical Reports Server (NTRS)
Schwarze, G. E.; Frasca, A. J.
1991-01-01
Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN bipolar junction transistors (BJTs), metal-oxide-semiconductor field effect transistors (MOSFETs), and static induction transistors (SITs) are given. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Postirradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.
Microstructural evolution of pure tungsten neutron irradiated with a mixed energy spectrum
NASA Astrophysics Data System (ADS)
Koyanagi, Takaaki; Kumar, N. A. P. Kiran; Hwang, Taehyun; Garrison, Lauren M.; Hu, Xunxiang; Snead, Lance L.; Katoh, Yutai
2017-07-01
Microstructures of single-crystal bulk tungsten (W) and polycrystalline W foil with a strong grain texture were investigated using transmission electron microscopy following neutron irradiation at ∼90-800 °C to 0.03-4.6 displacements per atom (dpa) in the High Flux Isotope Reactor with a mixed energy spectrum. The dominant irradiation defects were dislocation loops and small clusters at ∼90 °C. Additional voids were formed in W irradiated at above 460 °C. Voids and precipitates involving transmutation rhenium and osmium were the dominant defects at more than ∼1 dpa. We found a new phenomenon of microstructural evolution in irradiated polycrystalline W: Re- and Os-rich precipitation along grain boundaries. Comparison of results between this study and previous studies using different irradiation facilities revealed that the microstructural evolution of pure W is highly dependent on the neutron energy spectrum in addition to the irradiation temperature and dose.
Three-dimensional patterning methods and related devices
DOE Office of Scientific and Technical Information (OSTI.GOV)
Putnam, Morgan C.; Kelzenberg, Michael D.; Atwater, Harry A.
2016-12-27
Three-dimensional patterning methods of a three-dimensional microstructure, such as a semiconductor wire array, are described, in conjunction with etching and/or deposition steps to pattern the three-dimensional microstructure.
Self-ion emulation of high dose neutron irradiated microstructure in stainless steels
NASA Astrophysics Data System (ADS)
Jiao, Z.; Michalicka, J.; Was, G. S.
2018-04-01
Solution-annealed 304L stainless steel (SS) was irradiated to 130 dpa at 380 °C, and to 15 dpa at 500 °C and 600 °C, and cold-worked 316 SS (CW 316 SS) was irradiated to 130 dpa at 380 °C using 5 MeV Fe++/Ni++ to produce microstructures and radiation-induced segregation (RIS) for comparison with that from neutron irradiation at 320 °C to 46 dpa in the BOR60 reactor. For the 304L SS alloy, self-ion irradiation at 380 °C produced a dislocation loop microstructure that was comparable to that by neutron irradiation. No voids were observed in either the 380 °C self-ion irradiation or the neutron irradiation conditions. Irradiation at 600 °C produced the best match to radiation-induced segregation of Cr and Ni with the neutron irradiation, consistent with the prediction of a large temperature shift by Mansur's invariant relations for RIS. For the CW 316 SS alloy irradiated to 130 dpa at 380 °C, both the irradiated microstructure (dislocation loops, precipitates and voids) and RIS reasonably matched the neutron-irradiated sample. The smaller temperature shift for RIS in CW 316 SS was likely due to the high sink (dislocation) density induced by the cold work. A single self-ion irradiation condition at a dose rate ∼1000× that in reactor does not match both dislocation loops and RIS in solution-annealed 304L SS. However, a single irradiation temperature produced a reasonable match with both the dislocation/precipitate microstructure and RIS in CW 316 SS, indicating that sink density is a critical factor in determining the temperature shift for self-ion irradiations.
The Los Alamos Neutron Science Center Spallation Neutron Sources
DOE Office of Scientific and Technical Information (OSTI.GOV)
Nowicki, Suzanne F.; Wender, Stephen A.; Mocko, Michael
The Los Alamos Neutron Science Center (LANSCE) provides the scientific community with intense sources of neutrons, which can be used to perform experiments supporting civilian and national security research. These measurements include nuclear physics experiments for the defense program, basic science, and the radiation effect programs. This paper focuses on the radiation effects program, which involves mostly accelerated testing of semiconductor parts. When cosmic rays strike the earth's atmosphere, they cause nuclear reactions with elements in the air and produce a wide range of energetic particles. Because neutrons are uncharged, they can reach aircraft altitudes and sea level. These neutronsmore » are thought to be the most important threat to semiconductor devices and integrated circuits. The best way to determine the failure rate due to these neutrons is to measure the failure rate in a neutron source that has the same spectrum as those produced by cosmic rays. Los Alamos has a high-energy and a low-energy neutron source for semiconductor testing. Both are driven by the 800-MeV proton beam from the LANSCE accelerator. The high-energy neutron source at the Weapons Neutron Research (WNR) facility uses a bare target that is designed to produce fast neutrons with energies from 100 keV to almost 800 MeV. The measured neutron energy distribution from WNR is very similar to that of the cosmic-ray-induced neutrons in the atmosphere. However, the flux provided at the WNR facility is typically 5×107 times more intense than the flux of the cosmic-ray-induced neutrons. This intense neutron flux allows testing at greatly accelerated rates. An irradiation test of less than an hour is equivalent to many years of neutron exposure due to cosmic-ray neutrons. The low-energy neutron source is located at the Lujan Neutron Scattering Center. It is based on a moderated source that provides useful neutrons from subthermal energies to ~100 keV. The characteristics of these sources, and ongoing industry program are described in this paper.« less
The Los Alamos Neutron Science Center Spallation Neutron Sources
Nowicki, Suzanne F.; Wender, Stephen A.; Mocko, Michael
2017-10-26
The Los Alamos Neutron Science Center (LANSCE) provides the scientific community with intense sources of neutrons, which can be used to perform experiments supporting civilian and national security research. These measurements include nuclear physics experiments for the defense program, basic science, and the radiation effect programs. This paper focuses on the radiation effects program, which involves mostly accelerated testing of semiconductor parts. When cosmic rays strike the earth's atmosphere, they cause nuclear reactions with elements in the air and produce a wide range of energetic particles. Because neutrons are uncharged, they can reach aircraft altitudes and sea level. These neutronsmore » are thought to be the most important threat to semiconductor devices and integrated circuits. The best way to determine the failure rate due to these neutrons is to measure the failure rate in a neutron source that has the same spectrum as those produced by cosmic rays. Los Alamos has a high-energy and a low-energy neutron source for semiconductor testing. Both are driven by the 800-MeV proton beam from the LANSCE accelerator. The high-energy neutron source at the Weapons Neutron Research (WNR) facility uses a bare target that is designed to produce fast neutrons with energies from 100 keV to almost 800 MeV. The measured neutron energy distribution from WNR is very similar to that of the cosmic-ray-induced neutrons in the atmosphere. However, the flux provided at the WNR facility is typically 5×107 times more intense than the flux of the cosmic-ray-induced neutrons. This intense neutron flux allows testing at greatly accelerated rates. An irradiation test of less than an hour is equivalent to many years of neutron exposure due to cosmic-ray neutrons. The low-energy neutron source is located at the Lujan Neutron Scattering Center. It is based on a moderated source that provides useful neutrons from subthermal energies to ~100 keV. The characteristics of these sources, and ongoing industry program are described in this paper.« less
Solid-State Neutron Detector Device
NASA Technical Reports Server (NTRS)
Bensaoula, Abdelhak (Inventor); Starikov, David (Inventor); Pillai, Rajeev (Inventor)
2017-01-01
The structure and methods of fabricating a high efficiency compact solid state neutron detector based on III-Nitride semiconductor structures deposited on a substrate. The operation of the device is based on absorption of neutrons, which results in generation of free carriers.
Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors.
He, Tao; Wu, Yanfei; D'Avino, Gabriele; Schmidt, Elliot; Stolte, Matthias; Cornil, Jérôme; Beljonne, David; Ruden, P Paul; Würthner, Frank; Frisbie, C Daniel
2018-05-30
Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure-charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure-property relationships in organic semiconductors.
NASA Astrophysics Data System (ADS)
Barzagli, E.; Grazzi, F.; Salvemini, F.; Scherillo, A.; Sato, H.; Shinohara, T.; Kamiyama, T.; Kiyanagi, Y.; Tremsin, A.; Zoppi, Marco
2014-07-01
The phase composition and the microstructure of four ferrous Japanese arrows of the Edo period (17th-19th century) has been determined through two complementary neutron techniques: Position-sensitive wavelength-resolved neutron transmission analysis (PS-WRNTA) and time-of-flight neutron diffraction (ToF-ND). Standard ToF-ND technique has been applied by using the INES diffractometer at the ISIS pulsed neutron source in the UK, while the innovative PS-WRNTA one has been performed at the J-PARC neutron source on the BL-10 NOBORU beam line using the high spatial high time resolution neutron imaging detector. With ToF-ND we were able to reach information about the quantitative distribution of the metal and non-metal phases, the texture level, the strain level and the domain size of each of the samples, which are important parameters to gain knowledge about the technological level of the Japanese weapon. Starting from this base of data, the more complex PS-WRNTA has been applied to the same samples. This experimental technique exploits the presence of the so-called Bragg edges, in the time-of-flight spectrum of neutrons transmitted through crystalline materials, to map the microstructural properties of samples. The two techniques are non-invasive and can be easily applied to archaeometry for an accurate microstructure mapping of metal and ceramic artifacts.
Tremsin, Anton S.; Gao, Yan; Dial, Laura C.; ...
2016-07-08
Non-destructive testing techniques based on neutron imaging and diffraction can provide information on the internal structure of relatively thick metal samples (up to several cm), which are opaque to other conventional non-destructive methods. Spatially resolved neutron transmission spectroscopy is an extension of traditional neutron radiography, where multiple images are acquired simultaneously, each corresponding to a narrow range of energy. The analysis of transmission spectra enables studies of bulk microstructures at the spatial resolution comparable to the detector pixel. In this study we demonstrate the possibility of imaging (with ~100 μm resolution) distribution of some microstructure properties, such as residual strain,more » texture, voids and impurities in Inconel 625 samples manufactured with an additive manufacturing method called direct metal laser melting (DMLM). Although this imaging technique can be implemented only in a few large-scale facilities, it can be a valuable tool for optimization of additive manufacturing techniques and materials and for correlating bulk microstructure properties to manufacturing process parameters. Additionally, the experimental strain distribution can help validate finite element models which many industries use to predict the residual stress distributions in additive manufactured components.« less
Tremsin, Anton S; Gao, Yan; Dial, Laura C; Grazzi, Francesco; Shinohara, Takenao
2016-01-01
Non-destructive testing techniques based on neutron imaging and diffraction can provide information on the internal structure of relatively thick metal samples (up to several cm), which are opaque to other conventional non-destructive methods. Spatially resolved neutron transmission spectroscopy is an extension of traditional neutron radiography, where multiple images are acquired simultaneously, each corresponding to a narrow range of energy. The analysis of transmission spectra enables studies of bulk microstructures at the spatial resolution comparable to the detector pixel. In this study we demonstrate the possibility of imaging (with ~100 μm resolution) distribution of some microstructure properties, such as residual strain, texture, voids and impurities in Inconel 625 samples manufactured with an additive manufacturing method called direct metal laser melting (DMLM). Although this imaging technique can be implemented only in a few large-scale facilities, it can be a valuable tool for optimization of additive manufacturing techniques and materials and for correlating bulk microstructure properties to manufacturing process parameters. In addition, the experimental strain distribution can help validate finite element models which many industries use to predict the residual stress distributions in additive manufactured components.
NASA Astrophysics Data System (ADS)
Tremsin, Anton S.; Gao, Yan; Dial, Laura C.; Grazzi, Francesco; Shinohara, Takenao
2016-01-01
Non-destructive testing techniques based on neutron imaging and diffraction can provide information on the internal structure of relatively thick metal samples (up to several cm), which are opaque to other conventional non-destructive methods. Spatially resolved neutron transmission spectroscopy is an extension of traditional neutron radiography, where multiple images are acquired simultaneously, each corresponding to a narrow range of energy. The analysis of transmission spectra enables studies of bulk microstructures at the spatial resolution comparable to the detector pixel. In this study we demonstrate the possibility of imaging (with 100 μm resolution) distribution of some microstructure properties, such as residual strain, texture, voids and impurities in Inconel 625 samples manufactured with an additive manufacturing method called direct metal laser melting (DMLM). Although this imaging technique can be implemented only in a few large-scale facilities, it can be a valuable tool for optimization of additive manufacturing techniques and materials and for correlating bulk microstructure properties to manufacturing process parameters. In addition, the experimental strain distribution can help validate finite element models which many industries use to predict the residual stress distributions in additive manufactured components.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Tremsin, Anton S.; Gao, Yan; Dial, Laura C.
Non-destructive testing techniques based on neutron imaging and diffraction can provide information on the internal structure of relatively thick metal samples (up to several cm), which are opaque to other conventional non-destructive methods. Spatially resolved neutron transmission spectroscopy is an extension of traditional neutron radiography, where multiple images are acquired simultaneously, each corresponding to a narrow range of energy. The analysis of transmission spectra enables studies of bulk microstructures at the spatial resolution comparable to the detector pixel. In this study we demonstrate the possibility of imaging (with ~100 μm resolution) distribution of some microstructure properties, such as residual strain,more » texture, voids and impurities in Inconel 625 samples manufactured with an additive manufacturing method called direct metal laser melting (DMLM). Although this imaging technique can be implemented only in a few large-scale facilities, it can be a valuable tool for optimization of additive manufacturing techniques and materials and for correlating bulk microstructure properties to manufacturing process parameters. Additionally, the experimental strain distribution can help validate finite element models which many industries use to predict the residual stress distributions in additive manufactured components.« less
Tremsin, Anton S.; Gao, Yan; Dial, Laura C.; Grazzi, Francesco; Shinohara, Takenao
2016-01-01
Abstract Non-destructive testing techniques based on neutron imaging and diffraction can provide information on the internal structure of relatively thick metal samples (up to several cm), which are opaque to other conventional non-destructive methods. Spatially resolved neutron transmission spectroscopy is an extension of traditional neutron radiography, where multiple images are acquired simultaneously, each corresponding to a narrow range of energy. The analysis of transmission spectra enables studies of bulk microstructures at the spatial resolution comparable to the detector pixel. In this study we demonstrate the possibility of imaging (with ~100 μm resolution) distribution of some microstructure properties, such as residual strain, texture, voids and impurities in Inconel 625 samples manufactured with an additive manufacturing method called direct metal laser melting (DMLM). Although this imaging technique can be implemented only in a few large-scale facilities, it can be a valuable tool for optimization of additive manufacturing techniques and materials and for correlating bulk microstructure properties to manufacturing process parameters. In addition, the experimental strain distribution can help validate finite element models which many industries use to predict the residual stress distributions in additive manufactured components. PMID:27877885
neutron-Induced Failures in semiconductor Devices
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wender, Stephen Arthur
2017-03-13
Single Event Effects are a very significant failure mode in modern semiconductor devices that may limit their reliability. Accelerated testing is important for semiconductor industry. Considerable more work is needed in this field to mitigate the problem. Mitigation of this problem will probably come from Physicists and Electrical Engineers working together
NASA Astrophysics Data System (ADS)
ben Rguiga, N.; Álvarez-Serrano, I.; López, M. L.; Chérif, W.; Alonso, J. A.
2018-02-01
A mild hydrothermal method was adapted to prepare the SrMn_{1-x}CoxO_{3-δ} (0 ≤ x ≤ 0.2) compounds. They showed hexagonal-4H perovskite-type structure with space group P63/mmc, and cell parameters a ˜ 5.45 and c ˜ 9.08 Å, as deduced from X-ray and neutron diffraction data. The mean atomic concentrations indicated global stoichiometries close to the nominal ones whereas electron microscopy analyses pointed out to heterogeneity at the nanoscale. The characterization of the electrical response by means of impedance measurements, suggested a semiconductor behavior mainly ascribed to bulk contributions. Relaxation and conduction processes were analyzed. The materials showed mixed electronic-ionic conduction above ˜ 400 K, when ionic conduction between intergrains becomes favored. Microstructural homogeneity was revealed as the key factor controlling the electrical response.
Microstructural evolution of pure tungsten neutron irradiated with a mixed energy spectrum
Koyanagi, Takaaki; Kumar, N. A. P. Kiran; Hwang, Taehyun; ...
2017-04-13
Here, microstructures of single-crystal bulk tungsten (W) and polycrystalline W foil with a strong grain texture were investigated using transmission electron microscopy following neutron irradiation at ~90–800 °C to 0.03–4.6 displacements per atom (dpa) in the High Flux Isotope Reactor with a mixed energy spectrum. The dominant irradiation defects were dislocation loops and small clusters at ~90 °C. Additional voids were formed in W irradiated at above 460 °C. Voids and precipitates involving transmutation rhenium and osmium were the dominant defects at more than ~1 dpa. We found a new phenomenon of microstructural evolution in irradiated polycrystalline W: Re- andmore » Os-rich precipitation along grain boundaries. Comparison of results between this study and previous studies using different irradiation facilities revealed that the microstructural evolution of pure W is highly dependent on the neutron energy spectrum in addition to the irradiation temperature and dose.« less
Microstructural evolution of pure tungsten neutron irradiated with a mixed energy spectrum
DOE Office of Scientific and Technical Information (OSTI.GOV)
Koyanagi, Takaaki; Kumar, N. A. P. Kiran; Hwang, Taehyun
Here, microstructures of single-crystal bulk tungsten (W) and polycrystalline W foil with a strong grain texture were investigated using transmission electron microscopy following neutron irradiation at ~90–800 °C to 0.03–4.6 displacements per atom (dpa) in the High Flux Isotope Reactor with a mixed energy spectrum. The dominant irradiation defects were dislocation loops and small clusters at ~90 °C. Additional voids were formed in W irradiated at above 460 °C. Voids and precipitates involving transmutation rhenium and osmium were the dominant defects at more than ~1 dpa. We found a new phenomenon of microstructural evolution in irradiated polycrystalline W: Re- andmore » Os-rich precipitation along grain boundaries. Comparison of results between this study and previous studies using different irradiation facilities revealed that the microstructural evolution of pure W is highly dependent on the neutron energy spectrum in addition to the irradiation temperature and dose.« less
Tansu, Nelson; Gilchrist, James F; Ee, Yik-Khoon; Kumnorkaew, Pisist
2013-11-19
A conventional semiconductor LED is modified to include a microlens layer over its light-emitting surface. The LED may have an active layer including at least one quantum well layer of InGaN and GaN. The microlens layer includes a plurality of concave microstructures that cause light rays emanating from the LED to diffuse outwardly, leading to an increase in the light extraction efficiency of the LED. The concave microstructures may be arranged in a substantially uniform array, such as a close-packed hexagonal array. The microlens layer is preferably constructed of curable material, such as polydimethylsiloxane (PDMS), and is formed by soft-lithography imprinting by contacting fluid material of the microlens layer with a template bearing a monolayer of homogeneous microsphere crystals, to cause concave impressions, and then curing the material to fix the concave microstructures in the microlens layer and provide relatively uniform surface roughness.
Multiple magnetic scattering in small-angle neutron scattering of Nd-Fe-B nanocrystalline magnet.
Ueno, Tetsuro; Saito, Kotaro; Yano, Masao; Ito, Masaaki; Shoji, Tetsuya; Sakuma, Noritsugu; Kato, Akira; Manabe, Akira; Hashimoto, Ai; Gilbert, Elliot P; Keiderling, Uwe; Ono, Kanta
2016-06-20
We have investigated the influence of multiple scattering on the magnetic small-angle neutron scattering (SANS) from a Nd-Fe-B nanocrystalline magnet. We performed sample-thickness- and neutron-wavelength-dependent SANS measurements, and observed the scattering vector dependence of the multiple magnetic scattering. It is revealed that significant multiple scattering exists in the magnetic scattering rather than the nuclear scattering of Nd-Fe-B nanocrystalline magnet. It is considered that the mean free path of the neutrons for magnetic scattering is rather short in Nd-Fe-B magnets. We analysed the SANS data by the phenomenological magnetic correlation model considering the magnetic microstructures and obtained the microstructural parameters.
Multiple magnetic scattering in small-angle neutron scattering of Nd–Fe–B nanocrystalline magnet
Ueno, Tetsuro; Saito, Kotaro; Yano, Masao; Ito, Masaaki; Shoji, Tetsuya; Sakuma, Noritsugu; Kato, Akira; Manabe, Akira; Hashimoto, Ai; Gilbert, Elliot P.; Keiderling, Uwe; Ono, Kanta
2016-01-01
We have investigated the influence of multiple scattering on the magnetic small-angle neutron scattering (SANS) from a Nd–Fe–B nanocrystalline magnet. We performed sample-thickness- and neutron-wavelength-dependent SANS measurements, and observed the scattering vector dependence of the multiple magnetic scattering. It is revealed that significant multiple scattering exists in the magnetic scattering rather than the nuclear scattering of Nd–Fe–B nanocrystalline magnet. It is considered that the mean free path of the neutrons for magnetic scattering is rather short in Nd–Fe–B magnets. We analysed the SANS data by the phenomenological magnetic correlation model considering the magnetic microstructures and obtained the microstructural parameters. PMID:27321149
Neutron imaging systems utilizing lithium-containing semiconductor crystals
Stowe, Ashley C.; Burger, Arnold
2017-04-25
A neutron imaging system, including: a plurality of Li-III-VI.sub.2 semiconductor crystals arranged in an array, wherein III represents a Group III element and VI represents a Group VI element; and electronics operable for detecting and a charge in each of the plurality of crystals in the presence of neutrons and for imaging the neutrons. Each of the crystals is formed by: melting the Group III element; adding the Li to the melted Group III element at a rate that allows the Li and Group III element to react, thereby providing a single phase Li-III compound; and adding the Group VI element to the single phase Li-III compound and heating. Optionally, each of the crystals is also formed by doping with a Group IV element activator.
Semiconductor composition containing iron, dysprosium, and terbium
DOE Office of Scientific and Technical Information (OSTI.GOV)
Pooser, Raphael C.; Lawrie, Benjamin J.; Baddorf, Arthur P.
An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.
NASA Astrophysics Data System (ADS)
Krimpalis, S.; Mergia, K.; Messoloras, S.; Dubinko, A.; Terentyev, D.; Triantou, K.; Reiser, J.; Pintsuk, G.
2017-12-01
The mechanical properties of tungsten produced in different forms before and after neutron irradiation are of considerable interest for their application in fusion devices such as ITER. In this work the mechanical properties and the microstructure of two tungsten (W) products with different microstructures are investigated using depth sensing nano/micro-indentation and transmission electron microscopy, respectively. Neutron irradiation of these materials for different doses, in the temperature range 600 °C-1200 °C, is underway within the EUROfusion project in order to progress our basic understanding of neutron irradiation effects on W. The hardness and elastic modulus are determined as a function of the penetration depth, loading/unloading rate, holding time at maximum load and the final surface treatment. The results are correlated with the microstructure as investigated by SEM and TEM measurements.
Programmable and coherent crystallization of semiconductors
Yu, Liyang; Niazi, Muhammad R.; Ngongang Ndjawa, Guy O.; Li, Ruipeng; Kirmani, Ahmad R.; Munir, Rahim; Balawi, Ahmed H.; Laquai, Frédéric; Amassian, Aram
2017-01-01
The functional properties and technological utility of polycrystalline materials are largely determined by the structure, geometry, and spatial distribution of their multitude of crystals. However, crystallization is seeded through stochastic and incoherent nucleation events, limiting the ability to control or pattern the microstructure, texture, and functional properties of polycrystalline materials. We present a universal approach that can program the microstructure of materials through the coherent seeding of otherwise stochastic homogeneous nucleation events. The method relies on creating topographic variations to seed nucleation and growth at designated locations while delaying nucleation elsewhere. Each seed can thus produce a coherent growth front of crystallization with a geometry designated by the shape and arrangement of seeds. Periodic and aperiodic crystalline arrays of functional materials, such as semiconductors, can thus be created on demand and with unprecedented sophistication and ease by patterning the location and shape of the seeds. This approach is used to demonstrate printed arrays of organic thin-film transistors with remarkable performance and reproducibility owing to their demonstrated spatial control over the microstructure of organic and inorganic polycrystalline semiconductors. PMID:28275737
Semiconductor neutron detector
Ianakiev, Kiril D [Los Alamos, NM; Littlewood, Peter B [Cambridge, GB; Blagoev, Krastan B [Arlington, VA; Swinhoe, Martyn T [Los Alamos, NM; Smith, James L [Los Alamos, NM; Sullivan, Clair J [Los Alamos, NM; Alexandrov, Boian S [Los Alamos, NM; Lashley, Jason Charles [Santa Fe, NM
2011-03-08
A neutron detector has a compound of lithium in a single crystal form as a neutron sensor element. The lithium compound, containing improved charge transport properties, is either lithium niobate or lithium tantalate. The sensor element is in direct contact with a monitor that detects an electric current. A signal proportional to the electric current is produced and is calibrated to indicate the neutrons sensed. The neutron detector is particularly useful for detecting neutrons in a radiation environment. Such radiation environment may, e.g. include gamma radiation and noise.
NASA Astrophysics Data System (ADS)
Bazo, J.; Rojas, J. M.; Best, S.; Bruna, R.; Endress, E.; Mendoza, P.; Poma, V.; Gago, A. M.
2018-03-01
Samples of two characteristic semiconductor sensor materials, silicon and germanium, have been irradiated with neutrons produced at the RP-10 Nuclear Research Reactor at 4.5 MW. Their radionuclides photon spectra have been measured with high resolution gamma spectroscopy, quantifying four radioisotopes (28Al, 29Al for Si and 75Ge and 77Ge for Ge). We have compared the radionuclides production and their emission spectrum data with Monte Carlo simulation results from FLUKA. Thus we have tested FLUKA's low energy neutron library (ENDF/B-VIIR) and decay photon scoring with respect to the activation of these semiconductors. We conclude that FLUKA is capable of predicting relative photon peak amplitudes, with gamma intensities greater than 1%, of produced radionuclides with an average uncertainty of 13%. This work allows us to estimate the corresponding systematic error on neutron activation simulation studies of these sensor materials.
Electron-phonon interaction, transport and ultrafast processes in semiconductor microstructures
NASA Astrophysics Data System (ADS)
Sarma, Sankar D.
1992-08-01
We have fulfilled our contract obligations completely by doing theoretical research on electron-phonon interaction and transport properties in submicron semiconductor structures with the emphasis on ultrafast processes and many-body effects. Fifty-five papers have been published based on our research during the contract period.
Comparison between Silicon-Carbide and diamond for fast neutron detection at room temperature
NASA Astrophysics Data System (ADS)
Obraztsova, O.; Ottaviani, L.; Klix, A.; Döring, T.; Palais, O.; Lyoussi, A.
2018-01-01
Neutron radiation detector for nuclear reactor applications plays an important role in getting information about the actual neutron yield and reactor environment. Such detector must be able to operate at high temperature (up to 600° C) and high neutron flux levels. It is worth nothing that a detector for industrial environment applications must have fast and stable response over considerable long period of use as well as high energy resolution. Silicon Carbide is one of the most attractive materials for neutron detection. Thanks to its outstanding properties, such as high displacement threshold energy (20-35 eV), wide band gap energy (3.27 eV) and high thermal conductivity (4.9 W/cm·K), SiC can operate in harsh environment (high temperature, high pressure and high radiation level) without additional cooling system. Our previous analyses reveal that SiC detectors, under irradiation and at elevated temperature, respond to neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity. The counting-rate of the thermal neutron-induced peak increases with the area of the detector, and appears to be linear with respect to the reactor power. Diamond is another semi-conductor considered as one of most promising materials for radiation detection. Diamond possesses several advantages in comparison to other semiconductors such as a wider band gap (5.5 eV), higher threshold displacement energy (40-50 eV) and thermal conductivity (22 W/cm·K), which leads to low leakage current values and make it more radiation resistant that its competitors. A comparison is proposed between these two semiconductors for the ability and efficiency to detect fast neutrons. For this purpose the deuterium-tritium neutron generator of Technical University of Dresden with 14 MeV neutron output of 1010 n·s-1 is used. In the present work, we interpret the first measurements and results with both 4H-SiC and chemical vapor deposition (CVD) diamond detectors irradiated with 14 MeV neutrons at room temperature.
Neutron detection with LiInSe2
NASA Astrophysics Data System (ADS)
Bell, Zane W.; Burger, A.; Matei, Liviu; Groza, Michael; Stowe, Ashley; Tower, Joshua; Kargar, Alireza; Hong, Huicong
2015-08-01
The detection of thermal neutrons has traditionally been accomplished with 3He-tubes, but with the recent shortage of 3He, much research has gone into finding suitable replacements. Both relatively inefficient 10B- and 6LiF-coated silicon diodes and HgI2 have been known for many years, and engineered structures in Si that have been filled with 10B and 6LiF have shown promise. These devices are intended to realize an optimal juxtaposition of neutron-sensitive material and semiconductor and thereby simulate a semiconductor containing B or Li. Such material has been realized for the first time in the form of 6LiInSe2 in which collectable charge from the 6Li(n,t) reaction indicates a neutron event. In this paper we report neutron and gamma responses of 6LiInSe2, we show pulse height spectra from pure gamma sources and from a thermal neutron source, and we derive the μτ product from the position of spectral features as a function of bias voltage. In addition, we demonstrate the observation of the beta decay of 116mIn in samples exposed to thermal neutrons. This feature of the response serves as an additional confirmation of exposure to neutrons.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Balagurov, Anatoly M.; Bobrikov, Ivan A.; Bokuchava, Gizo D.
2015-11-15
High resolution neutron diffraction was applied for elucidating of the microstructural evolution of nanocrystalline niobium carbide NbC{sub 0.93} powders subjected to high-energy ball milling. The diffraction patterns were collected with the high resolution Fourier diffractometer HRFD by using the reverse time-of-flight (RTOF) mode of data acquisition. The traditional single diffraction line analysis, the Rietveld method and more advanced Whole Powder Pattern Modeling technique were applied for the data analysis. The comparison of these techniques was performed. It is established that short-time milling produces a non-uniform powder, in which two distinct fractions with differing microstructure can be identified. Part of themore » material is in fact milled efficiently, with a reduction in grain size, an increase in the quantity of defects, and a corresponding tendency to decarburize reaching a composition NbC{sub 0.80} after 15 h of milling. The rest of the powder is less efficiently processed and preserves its composition and lower defect content. Larger milling times should have homogenized the system by increasing the efficiently milled fraction, but the material is unable to reach a uniform and homogeneous state. It is definitely shown that RTOF neutron diffraction patterns can provide the very accurate data for microstructure analysis of nanocrystalline powders. - Highlights: • The NbC{sub 0.93} powder was processed by high-energy ball milling. • The microstrain and dislocation density increase with milling time increase. • The corresponding decrease in crystallite size with milling time was observed. • The material exhibits the presence of two fractions after ball milling. • The RTOF neutron diffraction data are suitable for accurate microstructure analysis.« less
Semiconductor radiation detector
Bell, Zane W.; Burger, Arnold
2010-03-30
A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.
2016-05-31
UMKC-YIP-TR-2016 May 2016 Technical Report Prompt Neutron Spectrometry for Identification of SNM in Unknown Shielding...University of Missouri – Kansas City MSND: Micro-structured Neutron Detector HRM: Handheld Radiation Monitor PHS: Pulse Height Spectrum ANI: Active... Neutron Interrogation Distribution Statement A 6 Administrative Information and Acknowledgements Members of the University of Missouri
Perforated semiconductor neutron detectors for battery operated portable modules
NASA Astrophysics Data System (ADS)
McGregor, Douglas S.; Bellinger, Steven L.; Bruno, David; McNeil, Walter J.; Patterson, Eric; Shultis, J. Kenneth; Solomon, C. J.; Unruh, Troy
2007-09-01
Perforated semiconductor diode detectors have been under development for several years at Kansas State University for a variety of neutron detection applications. The fundamental device configuration is a pin diode detector fabricated from high-purity float zone refined Si wafers. Perforations are etched into the diode surface with inductively-coupled plasma (ICP) reactive ion etching (RIE) and backfilled with 6LiF neutron reactive material. The perforation shapes and depths can be optimized to yield a flat response to neutrons over a wide variation of angles. The prototype devices delivered over 3.8% thermal neutron detection efficiency while operating on only 15 volts. The highest efficiency devices thus far have delivered over 12% thermal neutron detection efficiency. The miniature devices are 5.6 mm in diameter and require minimal power to operate, ranging from 3.3 volts to 15 volts, depending upon the amplifying electronics. The battery operated devices have been incorporated into compact modules with a digital readout. Further, the new modules have incorporated wireless readout technology and can be monitored remotely. The neutron detection modules can be used for neutron dosimetry and neutron monitoring. When coupled with high-density polyethylene, the detectors can be used to measure fission neutrons from spontaneous fission sources. Monto Carlo analysis indicates that the devices can be used in cargo containers as a passive search tool for spontaneous fission sources, such as 240Pu. Measurements with a 252Cf source are being conducted for verification.
NASA Astrophysics Data System (ADS)
Hamm, Daniel S.; Rust, Mikah; Herrera, Elan H.; Matei, Liviu; Buliga, Vladimir; Groza, Michael; Burger, Arnold; Stowe, Ashley; Preston, Jeff; Lukosi, Eric D.
2018-06-01
This paper reports on the charge carrier properties of several lithium indium diselenide (LISe) semiconductors. It was found that the charge collection efficiency of LISe was improved after high flux thermal neutron irradiation including the presence of a typically unobservable alpha peak from hole-only collection. Charge carrier trap energies of the irradiated sample were measured using photo-induced current transient spectroscopy. Compared to previous studies of this material, no significant differences in trap energies were observed. Through trap-filled limited voltage measurements, neutron irradiation was found to increase the density of trap states within the bulk of the semiconductor, which created a polarization effect under alpha exposure but not neutron exposure. Further, the charge collection efficiency of the irradiated sample was higher (14-15 fC) than that of alpha particles (3-5 fC), indicating that an increase in hole signal contribution resulted from the neutron irradiation. Finally, it was observed that significant charge loss takes place near the point of generation, producing a significant scintillation response and artificially inflating the W-value of all semiconducting LISe crystals.
High Fidelity Ion Beam Simulation of High Dose Neutron Irradiation
DOE Office of Scientific and Technical Information (OSTI.GOV)
Was, Gary; Wirth, Brian; Motta, Athur
The objective of this proposal is to demonstrate the capability to predict the evolution of microstructure and properties of structural materials in-reactor and at high doses, using ion irradiation as a surrogate for reactor irradiations. “Properties” includes both physical properties (irradiated microstructure) and the mechanical properties of the material. Demonstration of the capability to predict properties has two components. One is ion irradiation of a set of alloys to yield an irradiated microstructure and corresponding mechanical behavior that are substantially the same as results from neutron exposure in the appropriate reactor environment. Second is the capability to predict the irradiatedmore » microstructure and corresponding mechanical behavior on the basis of improved models, validated against both ion and reactor irradiations and verified against ion irradiations. Taken together, achievement of these objectives will yield an enhanced capability for simulating the behavior of materials in reactor irradiations.« less
NASA Astrophysics Data System (ADS)
Coppola, R.; Fiori, F.; Little, E. A.; Magnani, M.
1997-06-01
Results are presented of a small-angle neutron scattering (SANS) study on two 10-13% Cr martensitic stainless steels of interest for nuclear applications, viz. DIN 1.4914 (MANET specification, for fusion reactors) and AISI 410. The investigation has focussed principally on microstructural effects associated with the differences in chromium content between the two alloys. The size distribution functions determined from nuclear and magnetic SANS components for the two steels given identical heat treatments are in accord with an interpretation based on the presence of ˜ 1 nm size CCr aggregates in the microstructure. Much larger (˜ 10 nm) scattering inhomogeneities with different magnetic contrast are also present and tentatively identified as carbides.
NASA Astrophysics Data System (ADS)
Han, Young-Soo; Mao, Xiaodong; Jang, Jinsung; Kim, Tae-Kyu
2015-04-01
The ferritic ODS steel was manufactured by hot isostatic pressing and heat treatment. The nano-sized microstructures such as yttrium oxides and Cr oxides were quantitatively analyzed by small-angle neutron scattering (SANS). The effects of the fabrication conditions on the nano-sized microstructure were investigated in relation to the quantitative analysis results obtained by SANS. The ratio between magnetic and nuclear scattering components was calculated, and the characteristics of the nano-sized yttrium oxides are discussed based on the SANS analysis results.
Field, Kevin G.; Briggs, Samuel A.; Hu, Xunxiang; ...
2016-11-01
FeCrAl alloys are an attractive materials class for nuclear power applications due to their increased environmental compatibility over more traditional nuclear materials. Preliminary studies into the radiation tolerance of FeCrAl alloys under accelerated neutron testing between 300-400 °C have shown post-irradiation microstructures containing dislocation loops and Cr-rich ' phase. Although these initial works established the post-irradiation microstructures, little to no focus was applied towards the influence of pre-irradiation microstructures on this response. Here, a well annealed commercial FeCrAl alloy, Alkrothal 720, was neutron irradiated to 1.8 dpa at 382 °C and then the role of random high angle grain boundariesmore » on the spatial distribution and size of dislocation loops, dislocation loops, and black dot damage was analyzed using on-zone scanning transmission electron microscopy. Results showed a clear heterogeneous dislocation loop formation with dislocation loops showing an increased number density and size, black dot damage showing a significant number density decrease, and an increased size of dislocation loops in the vicinity directly adjacent to the grain boundary. Lastly, these results suggest the importance of the pre-irradiation microstructure on the radiation tolerance of FeCrAl alloys.« less
NASA Astrophysics Data System (ADS)
Celik, Cihangir
Advances in microelectronics result in sub-micrometer electronic technologies as predicted by Moore's Law, 1965, which states the number of transistors in a given space would double every two years. The most available memory architectures today have submicrometer transistor dimensions. The International Technology Roadmap for Semiconductors (ITRS), a continuation of Moore's Law, predicts that Dynamic Random Access Memory (DRAM) will have an average half pitch size of 50 nm and Microprocessor Units (MPU) will have an average gate length of 30 nm over the period of 2008-2012. Decreases in the dimensions satisfy the producer and consumer requirements of low power consumption, more data storage for a given space, faster clock speed, and portability of integrated circuits (IC), particularly memories. On the other hand, these properties also lead to a higher susceptibility of IC designs to temperature, magnetic interference, power supply, and environmental noise, and radiation. Radiation can directly or indirectly affect device operation. When a single energetic particle strikes a sensitive node in the micro-electronic device, it can cause a permanent or transient malfunction in the device. This behavior is called a Single Event Effect (SEE). SEEs are mostly transient errors that generate an electric pulse which alters the state of a logic node in the memory device without having a permanent effect on the functionality of the device. This is called a Single Event Upset (SEU) or Soft Error . Contrary to SEU, Single Event Latchup (SEL), Single Event Gate Rapture (SEGR), or Single Event Burnout (SEB) they have permanent effects on the device operation and a system reset or recovery is needed to return to proper operations. The rate at which a device or system encounters soft errors is defined as Soft Error Rate (SER). The semiconductor industry has been struggling with SEEs and is taking necessary measures in order to continue to improve system designs in nano-scale technologies. Prevention of SEEs has been studied and applied in the semiconductor industry by including radiation protection precautions in the system architecture or by using corrective algorithms in the system operation. Decreasing 10B content (20%of natural boron) in the natural boron of Borophosphosilicate glass (BPSG) layers that are conventionally used in the fabrication of semiconductor devices was one of the major radiation protection approaches for the system architecture. Neutron interaction in the BPSG layer was the origin of the SEEs because of the 10B (n,alpha) 7Li reaction products. Both of the particles produced have the capability of ionization in the silicon substrate region, whose thickness is comparable to the ranges of these particles. Using the soft error phenomenon in exactly the opposite manner of the semiconductor industry can provide a new neutron detection system based on the SERs in the semiconductor memories. By investigating the soft error mechanisms in the available semiconductor memories and enhancing the soft error occurrences in these devices, one can convert all memory using intelligent systems into portable, power efficient, directiondependent neutron detectors. The Neutron Intercepting Silicon Chip (NISC) project aims to achieve this goal by introducing 10B-enriched BPSG layers to the semiconductor memory architectures. This research addresses the development of a simulation tool, the NISC Soft Error Analysis Tool (NISCSAT), for soft error modeling and analysis in the semiconductor memories to provide basic design considerations for the NISC. NISCSAT performs particle transport and calculates the soft error probabilities, or SER, depending on energy depositions of the particles in a given memory node model of the NISC. Soft error measurements were performed with commercially available, off-the-shelf semiconductor memories and microprocessors to observe soft error variations with the neutron flux and memory supply voltage. Measurement results show that soft errors in the memories increase proportionally with the neutron flux, whereas they decrease with increasing the supply voltages. NISC design considerations include the effects of device scaling, 10B content in the BPSG layer, incoming neutron energy, and critical charge of the node for this dissertation. NISCSAT simulations were performed with various memory node models to account these effects. Device scaling simulations showed that any further increase in the thickness of the BPSG layer beyond 2 mum causes self-shielding of the incoming neutrons due to the BPSG layer and results in lower detection efficiencies. Moreover, if the BPSG layer is located more than 4 mum apart from the depletion region in the node, there are no soft errors in the node due to the fact that both of the reaction products have lower ranges in the silicon or any possible node layers. Calculation results regarding the critical charge indicated that the mean charge deposition of the reaction products in the sensitive volume of the node is about 15 fC. It is evident that the NISC design should have a memory architecture with a critical charge of 15 fC or less to obtain higher detection efficiencies. Moreover, the sensitive volume should be placed in close proximity to the BPSG layers so that its location would be within the range of alpha and 7Li particles. Results showed that the distance between the BPSG layer and the sensitive volume should be less than 2 mum to increase the detection efficiency of the NISC. Incoming neutron energy was also investigated by simulations and the results obtained from these simulations showed that NISC neutron detection efficiency is related with the neutron cross-sections of 10B (n,alpha) 7Li reaction, e.g., ratio of the thermal (0.0253 eV) to fast (2 MeV) neutron detection efficiencies is approximately equal to 8000:1. Environmental conditions and their effects on the NISC performance were also studied in this research. Cosmic rays were modeled and simulated via NISCSAT to investigate detection reliability of the NISC. Simulation results show that cosmic rays account for less than 2 % of the soft errors for the thermal neutron detection. On the other hand, fast neutron detection by the NISC, which already has a poor efficiency due to the low neutron cross-sections, becomes almost impossible at higher altitudes where the cosmic ray fluxes and their energies are higher. NISCSAT simulations regarding soft error dependency of the NISC for temperature and electromagnetic fields show that there are no significant effects in the NISC detection efficiency. Furthermore, the detection efficiency of the NISC decreases with both air humidity and use of moderators since the incoming neutrons scatter away before reaching the memory surface.
NASA Astrophysics Data System (ADS)
Key, M. J.; Cindro, V.; Lozano, M.
2004-12-01
SU-8 photosensitive epoxy resin was developed for the fabrication of high-aspect ratio microstructures in MEMS and microengineering applications, and has potential for use in the construction of novel gaseous micropattern radiation detectors. However, little is known of the behaviour of the cured material under irradiation. Mechanical properties of SU-8 film have been measured as a function of neutron exposure and compared with Kapton ® polyimide and Mylar ® PET polyester films, materials routinely used in gaseous radiation detectors, to asses the suitability of SU-8 based microstructures for gaseous detector applications. After exposure to a reactor core neutron fluence of 7.5×10 18 n cm -2, the new material showed a high level of resistance to radiation damage, comparable to Kapton film.
An Experiment in Radiation Measurement Using the Depron Instrument
NASA Astrophysics Data System (ADS)
Benghin, Victor V.; Nechaev, Oleg Y.; Zolotarev, Ivan A.; Amelyushkin, Alexander M.; Petrov, Vasiliy L.; Panasyuk, Milhail I.; Yashin, Ivan V.
2018-02-01
Most of the radiation measurements have been made onboard spacecraft flying along orbits with an inclination of up to 51.6 degrees. Due to the prospect of manned missions at orbits with larger inclinations, it is advisable to conduct preliminary detailed dosimetry measurements at a high-inclination orbit; due to its polar orbit, the Lomonosov satellite provides good opportunities for such study. We chose a method of cosmic radiation dosimetry based on semiconductor detectors. This method is widely used onboard spacecraft, including full-time radiation monitoring onboard the International Space Station (ISS). It should be noted that not only did the charged particles contribute significantly in the dose equivalent, but also did the neutrons. Semiconductor detectors have low sensitivity to neutron radiation and are not sufficient for detecting the expected flux of neutrons. We add a thermal neutron counter to the proposed device in order to provide an opportunity for estimation of neutron flux variations along the satellite trajectory. Thus, the design of the instrument DEPRON (Dosimeter of Electrons, PROtons and Neutrons) was determined. DEPRON is intended for registration of the absorbed doses and linear energy transfer spectra for high-energy electrons, protons and nuclei of space radiation, as well as registration of thermal neutrons. The present paper provides a brief description of the DEPRON instrument. Its calibration results and the first mission results of background radiation measurements are also presented.
NASA Astrophysics Data System (ADS)
Krejci, F.; Zemlicka, J.; Jakubek, J.; Dudak, J.; Vavrik, D.; Köster, U.; Atkins, D.; Kaestner, A.; Soltes, J.; Viererbl, L.; Vacik, J.; Tomandl, I.
2016-12-01
Using a suitable isotope such as 6Li and 10B semiconductor hybrid pixel detectors can be successfully adapted for position sensitive detection of thermal and cold neutrons via conversion into energetic light ions. The adapted devices then typically provides spatial resolution at the level comparable to the pixel pitch (55 μm) and sensitive area of about few cm2. In this contribution, we describe further progress in neutron imaging performance based on the development of a large-area hybrid pixel detector providing practically continuous neutron sensitive area of 71 × 57 mm2. The measurements characterising the detector performance at the cold neutron imaging instrument ICON at PSI and high-flux imaging beam-line Neutrograph at ILL are presented. At both facilities, high-resolution high-contrast neutron radiography with the newly developed detector has been successfully applied for objects which imaging were previously difficult with hybrid pixel technology (such as various composite materials, objects of cultural heritage etc.). Further, a significant improvement in the spatial resolution of neutron radiography with hybrid semiconductor pixel detector based on the fast read-out Timepix-based detector is presented. The system is equipped with a thin planar 6LiF convertor operated effectively in the event-by-event mode enabling position sensitive detection with spatial resolution better than 10 μm.
Charge-Carrier-Scattering Spectroscopy With BEEM
NASA Technical Reports Server (NTRS)
Hecht, Michael H.; Bell, Lloyd D.; Kaiser, William J.
1992-01-01
Ballistic-electron-emission microscopy (BEEM) constitutes basis of new spectroscopy of scattering of electrons and holes. Pointed tip electrode scans near surface of metal about 100 angstrom thick on semiconductor. Principle similar to scanning tunneling microscope, except metal acts as third electrode. Used to investigate transport phenomena, scattering phenomena, and creation of hot charge carriers in Au/Si and Au/GaAs metal/semiconductor microstructures.
Scanning Tunneling Optical Resonance Microscopy Developed
NASA Technical Reports Server (NTRS)
Bailey, Sheila G.; Raffaelle, Ryne P.; Lau, Janis E.; Jenkins, Phillip P.; Castro, Stephanie L.; Tin, Padetha; Wilt, David M.; Pal, Anna Maria; Fahey, Stephen D.
2004-01-01
The ability to determine the in situ optoelectronic properties of semiconductor materials has become especially important as the size of device architectures has decreased and the development of complex microsystems has increased. Scanning Tunneling Optical Resonance Microscopy, or STORM, can interrogate the optical bandgap as a function of its position within a semiconductor micro-structure. This technique uses a tunable solidstate titanium-sapphire laser whose output is "chopped" using a spatial light modulator and is coupled by a fiber-optic connector to a scanning tunneling microscope in order to illuminate the tip-sample junction. The photoenhanced portion of the tunneling current is spectroscopically measured using a lock-in technique. The capabilities of this technique were verified using semiconductor microstructure calibration standards that were grown by organometallic vapor-phase epitaxy. Bandgaps characterized by STORM measurements were found to be in good agreement with the bulk values determined by transmission spectroscopy and photoluminescence and with the theoretical values that were based on x-ray diffraction results.
TEM characterization of irradiated microstructure of Fe-9%Cr ODS and ferritic-martensitic alloys
NASA Astrophysics Data System (ADS)
Swenson, M. J.; Wharry, J. P.
2018-04-01
The objective of this study is to evaluate the effects of irradiation dose and dose rate on defect cluster (i.e. dislocation loops and voids) evolution in a model Fe-9%Cr oxide dispersion strengthened steel and commercial ferritic-martensitic steels HCM12A and HT9. Complimentary irradiations using Fe2+ ions, protons, or neutrons to doses ranging from 1 to 100 displacements per atom (dpa) at 500 °C are conducted on each alloy. The irradiated microstructures are characterized using transmission electron microscopy (TEM). Dislocation loops exhibit limited growth after 1 dpa upon Fe2+ and proton irradiation, while any voids observed are small and sparse. The average size and number density of loops are statistically invariant between Fe2+, proton, and neutron irradiated specimens at otherwise fixed irradiation conditions of ∼3 dpa, 500 °C. Therefore, we conclude that higher dose rate charged particle irradiations can reproduce the neutron irradiated loop microstructure with temperature shift governed by the invariance theory; this temperature shift is ∼0 °C for the high sink strength alloys studied herein.
Paternò, G M; Robbiano, V; Fraser, K J; Frost, C; García Sakai, V; Cacialli, F
2017-01-23
Aviation and space applications can benefit significantly from lightweight organic electronics, now spanning from displays to logics, because of the vital importance of minimising payload (size and mass). It is thus crucial to assess the damage caused to such materials by cosmic rays and neutrons, which pose a variety of hazards through atomic displacements following neutron-nucleus collisions. Here we report the first study of the neutron radiation tolerance of two poly(thiophene)s-based organic semiconductors: poly(3-hexylthiophene-2,5-diyl), P3HT, and the liquid-crystalline poly(2,5-bis (3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT. We combine spectroscopic investigations with characterisation of intrinsic charge mobility to show that PBTTT exhibits significantly higher tolerance than P3HT. We explain this in terms of a superior chemical, structural and conformational stability of PBTTT, which can be ascribed to its higher crystallinity, in turn induced by a combination of molecular design features. Our approach can be used to develop design strategies for better neutron radiation-tolerant materials, thus paving the way for organic semiconductors to enter avionics and space applications.
NASA Astrophysics Data System (ADS)
Paternò, G. M.; Robbiano, V.; Fraser, K. J.; Frost, C.; García Sakai, V.; Cacialli, F.
2017-01-01
Aviation and space applications can benefit significantly from lightweight organic electronics, now spanning from displays to logics, because of the vital importance of minimising payload (size and mass). It is thus crucial to assess the damage caused to such materials by cosmic rays and neutrons, which pose a variety of hazards through atomic displacements following neutron-nucleus collisions. Here we report the first study of the neutron radiation tolerance of two poly(thiophene)s-based organic semiconductors: poly(3-hexylthiophene-2,5-diyl), P3HT, and the liquid-crystalline poly(2,5-bis (3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT. We combine spectroscopic investigations with characterisation of intrinsic charge mobility to show that PBTTT exhibits significantly higher tolerance than P3HT. We explain this in terms of a superior chemical, structural and conformational stability of PBTTT, which can be ascribed to its higher crystallinity, in turn induced by a combination of molecular design features. Our approach can be used to develop design strategies for better neutron radiation-tolerant materials, thus paving the way for organic semiconductors to enter avionics and space applications.
Paternò, G. M.; Robbiano, V.; Fraser, K. J.; Frost, C.; García Sakai, V.; Cacialli, F.
2017-01-01
Aviation and space applications can benefit significantly from lightweight organic electronics, now spanning from displays to logics, because of the vital importance of minimising payload (size and mass). It is thus crucial to assess the damage caused to such materials by cosmic rays and neutrons, which pose a variety of hazards through atomic displacements following neutron-nucleus collisions. Here we report the first study of the neutron radiation tolerance of two poly(thiophene)s-based organic semiconductors: poly(3-hexylthiophene-2,5-diyl), P3HT, and the liquid-crystalline poly(2,5-bis (3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT. We combine spectroscopic investigations with characterisation of intrinsic charge mobility to show that PBTTT exhibits significantly higher tolerance than P3HT. We explain this in terms of a superior chemical, structural and conformational stability of PBTTT, which can be ascribed to its higher crystallinity, in turn induced by a combination of molecular design features. Our approach can be used to develop design strategies for better neutron radiation-tolerant materials, thus paving the way for organic semiconductors to enter avionics and space applications. PMID:28112195
Assessment of Shape Memory Alloys - From Atoms To Actuators - Via In Situ Neutron Diffraction
NASA Technical Reports Server (NTRS)
Benafan, Othmane
2014-01-01
As shape memory alloys (SMAs) become an established actuator technology, it is important to identify the fundamental mechanisms responsible for their performance by understanding microstructure performance relationships from processing to final form. Yet, microstructural examination of SMAs at stress and temperature is often a challenge since structural changes occur with stress and temperature and microstructures cannot be preserved through quenching or after stress removal, as would be the case for conventional materials. One solution to this dilemma is in situ neutron diffraction, which has been applied to the investigation of SMAs and has offered a unique approach to reveal the fundamental micromechanics and microstructural aspects of bulk SMAs in a non-destructive setting. Through this technique, it is possible to directly correlate the micromechanical responses (e.g., internal residual stresses, lattice strains), microstructural evolutions (e.g., texture, defects) and phase transformation properties (e.g., phase fractions, kinetics) to the macroscopic actuator behavior. In this work, in situ neutron diffraction was systematically employed to evaluate the deformation and transformation behavior of SMAs under typical actuator conditions. Austenite and martensite phases, yield behavior, variant selection and transformation temperatures were characterized for a polycrystalline NiTi (49.9 at. Ni). As the alloy transforms under thermomechanical loading, the measured textures and lattice plane-level variations were directly related to the cyclic actuation-strain characteristics and the dimensional instability (strain ratcheting) commonly observed in this alloy. The effect of training on the shape memory characteristics of the alloy and the development of two-way shape memory effect (TWSME) were also assessed. The final conversion from a material to a useful actuator, typically termed shape setting, was also investigated in situ during constrained heatingcooling and subsequent shape recovery experiments. Neutron diffraction techniques are also being applied to the investigation of novel high temperature SMAs with the objective of designing alloys with better stability, higher transition temperatures and ultimately superior durability.
Irradiation hardening of pure tungsten exposed to neutron irradiation
Hu, Xunxiang; Koyanagi, Takaaki; Fukuda, Makoto; ...
2016-08-26
In this paper, pure tungsten samples have been neutron irradiated in HFIR at 90–850 °C to 0.03–2.2 dpa. A dispersed barrier hardening model informed by the available microstructure data has been used to predict the hardness. Comparison of the model predictions and the measured Vickers hardness reveals the dominant hardening contribution at various irradiation conditions. For tungsten samples irradiated in HFIR, the results indicate that voids and dislocation loops contributed to the hardness increase in the low dose region (<0.3 dpa), while the formation of intermetallic second phase precipitation, resulting from transmutation, dominates the radiation-induced strengthening beginning with a relativelymore » modest dose (>0.6 dpa). Finally, the precipitate contribution is most pronounced for the HFIR irradiations, whereas the radiation-induced defect cluster microstructure can rationalize the entirety of the hardness increase observed in tungsten irradiated in the fast neutron spectrum of Joyo and the mixed neutron spectrum of JMTR.« less
NASA Astrophysics Data System (ADS)
Zhou, Z.; Bouwman, W. G.; Schut, H.; van Staveren, T. O.; Heijna, M. C. R.; Pappas, C.
2017-04-01
Neutron irradiation effects on the microstructure of nuclear graphite have been investigated by X-ray diffraction on virgin and low doses (∼ 1.3 and ∼ 2.2 dpa), high temperature (750° C) irradiated samples. The diffraction patterns were interpreted using a model, which takes into account the turbostratic disorder. Besides the lattice constants, the model introduces two distinct coherent lengths in the c-axis and the basal plane, that characterise the volumes from which X-rays are scattered coherently. The methodology used in this work allows to quantify the effect of irradiation damage on the microstructure of nuclear graphite seen by X-ray diffraction. The results show that the changes of the deduced structural parameters are in agreement with previous observations from electron microscopy, but not directly related to macroscopic changes.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Mahalik, Jyoti P.; Dugger, Jason W.; Sides, Scott W.
Mixtures of block copolymers and nanoparticles (block copolymer nanocomposites) are known to microphase separate into a plethora of microstructures, depending on the composition, length scale and nature of interactions among its different constituents. Theoretical and experimental works on this class of nanocomposites have already high-lighted intricate relations among chemical details of the polymers, nanoparticles, and various microstructures. Confining these nanocomposites in thin films yields an even larger array of structures, which are not normally observed in the bulk. In contrast to the bulk, exploring various microstructures in thin films by the experimental route remains a challenging task. Here in thismore » work, we construct a model for the thin films of lamellar forming diblock copolymers containing spherical nanoparticles based on a hybrid particle-field approach. The model is benchmarked by comparison with the depth profiles obtained from the neutron reflectivity experiments for symmetric poly(deuterated styrene-b-n butyl methacrylate) copolymers blended with spherical magnetite nanoparticles covered with hydrogenated poly(styrene) corona. We show that the model based on a hybrid particle-field approach provides details of the underlying microphase separation in the presence of the nanoparticles through a direct comparison to the neutron reflectivity data. This work benchmarks the application of the hybrid particle-field model to extract the interaction parameters for exploring different microstructures in thin films containing block copolymers and nanocomposites.« less
Mahalik, Jyoti P.; Dugger, Jason W.; Sides, Scott W.; ...
2018-04-10
Mixtures of block copolymers and nanoparticles (block copolymer nanocomposites) are known to microphase separate into a plethora of microstructures, depending on the composition, length scale and nature of interactions among its different constituents. Theoretical and experimental works on this class of nanocomposites have already high-lighted intricate relations among chemical details of the polymers, nanoparticles, and various microstructures. Confining these nanocomposites in thin films yields an even larger array of structures, which are not normally observed in the bulk. In contrast to the bulk, exploring various microstructures in thin films by the experimental route remains a challenging task. Here in thismore » work, we construct a model for the thin films of lamellar forming diblock copolymers containing spherical nanoparticles based on a hybrid particle-field approach. The model is benchmarked by comparison with the depth profiles obtained from the neutron reflectivity experiments for symmetric poly(deuterated styrene-b-n butyl methacrylate) copolymers blended with spherical magnetite nanoparticles covered with hydrogenated poly(styrene) corona. We show that the model based on a hybrid particle-field approach provides details of the underlying microphase separation in the presence of the nanoparticles through a direct comparison to the neutron reflectivity data. This work benchmarks the application of the hybrid particle-field model to extract the interaction parameters for exploring different microstructures in thin films containing block copolymers and nanocomposites.« less
NASA Astrophysics Data System (ADS)
Field, Kevin G.; Briggs, Samuel A.; Hu, Xunxiang; Yamamoto, Yukinori; Howard, Richard H.; Sridharan, Kumar
2017-01-01
FeCrAl alloys are an attractive class of materials for nuclear power applications because of their increased environmental compatibility compared with more traditional nuclear materials. Preliminary studies into the radiation tolerance of FeCrAl alloys under accelerated neutron testing between 300 and 400 °C have shown post-irradiation microstructures containing dislocation loops and a Cr-rich α‧ phase. Although these initial studies established the post-irradiation microstructures, there was little to no focus on understanding the influence of pre-irradiation microstructures on this response. In this study, a well-annealed commercial FeCrAl alloy, Alkrothal 720, was neutron irradiated to 1.8 displacements per atom (dpa) at 382 °C and then the effect of random high-angle grain boundaries on the spatial distribution and size of a〈100〉 dislocation loops, a/2〈111〉 dislocation loops, and black dot damage was analyzed using on-zone scanning transmission electron microscopy. Results showed a clear heterogeneous dislocation loop formation with a/2〈111〉 dislocation loops showing an increased number density and size, black dot damage showing a significant number density decrease, and a〈100〉 dislocation loops exhibiting an increased size in the vicinity of the grain boundary. These results suggest the importance of the pre-irradiation microstructure and, specifically, defect sink density spacing to the radiation tolerance of FeCrAl alloys.
Effects of Rare Earth Metals on Steel Microstructures
Pan, Fei; Zhang, Jian; Chen, Hao-Long; Su, Yen-Hsun; Kuo, Chia-Liang; Su, Yen-Hao; Chen, Shin-Hau; Lin, Kuan-Ju; Hsieh, Ping-Hung; Hwang, Weng-Sing
2016-01-01
Rare earth metals are used in semiconductors, solar cells and catalysts. This review focuses on the background of oxide metallurgy technologies, the chemical and physical properties of rare earth (RE) metals, the background of oxide metallurgy, the functions of RE metals in steelmaking, and the influences of RE metals on steel microstructures. Future prospects for RE metal applications in steelmaking are also presented. PMID:28773545
Microstructural processes in irradiated materials
NASA Astrophysics Data System (ADS)
Byun, Thak Sang; Morgan, Dane; Jiao, Zhijie; Almer, Jonathan; Brown, Donald
2016-04-01
These proceedings contain the papers presented at two symposia, the Microstructural Processes in Irradiated Materials (MPIM) and Characterization of Nuclear Reactor Materials and Components with Neutron and Synchrotron Radiation, held in the TMS 2015, 144th Annual Meeting & Exhibition at Walt Disney World, Orlando, Florida, USA on March 15-19, 2015.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Taylor, Caitlin Anne; Bufford, Daniel Charles; Muntifering, Brittany Rana
Materials designed for nuclear reactors undergo microstructural changes resulting from a combination of several environmental factors, including neutron irradiation damage, gas accumulation and elevated temperatures. Typical ion beam irradiation experiments designed for simulating a neutron irradiation environment involve irradiating the sample with a single ion beam and subsequent characterization of the resulting microstructure, often by transmission electron microscopy (TEM). This method does not allow for examination of microstructural effects due to simultaneous gas accumulation and displacement cascade damage, which occurs in a reactor. Sandia’s in situ ion irradiation TEM (I 3TEM) offers the unique ability to observe microstructural changes duemore » to irradiation damage caused by concurrent multi-beam ion irradiation in real time. This allows for time-dependent microstructure analysis. A plethora of additional in situ stages can be coupled with these experiments, e.g., for more accurately simulating defect kinetics at elevated reactor temperatures. As a result, this work outlines experiments showing synergistic effects in Au using in situ ion irradiation with various combinations of helium, deuterium and Au ions, as well as some initial work on materials utilized in tritium-producing burnable absorber rods (TPBARs): zirconium alloys and LiAlO 2.« less
In Situ TEM Multi-Beam Ion Irradiation as a Technique for Elucidating Synergistic Radiation Effects
Taylor, Caitlin Anne; Bufford, Daniel Charles; Muntifering, Brittany Rana; Senor, David; Steckbeck, Mackenzie; Davis, Justin; Doyle, Barney; Buller, Daniel
2017-01-01
Materials designed for nuclear reactors undergo microstructural changes resulting from a combination of several environmental factors, including neutron irradiation damage, gas accumulation and elevated temperatures. Typical ion beam irradiation experiments designed for simulating a neutron irradiation environment involve irradiating the sample with a single ion beam and subsequent characterization of the resulting microstructure, often by transmission electron microscopy (TEM). This method does not allow for examination of microstructural effects due to simultaneous gas accumulation and displacement cascade damage, which occurs in a reactor. Sandia’s in situ ion irradiation TEM (I3TEM) offers the unique ability to observe microstructural changes due to irradiation damage caused by concurrent multi-beam ion irradiation in real time. This allows for time-dependent microstructure analysis. A plethora of additional in situ stages can be coupled with these experiments, e.g., for more accurately simulating defect kinetics at elevated reactor temperatures. This work outlines experiments showing synergistic effects in Au using in situ ion irradiation with various combinations of helium, deuterium and Au ions, as well as some initial work on materials utilized in tritium-producing burnable absorber rods (TPBARs): zirconium alloys and LiAlO2. PMID:28961199
In Situ TEM Multi-Beam Ion Irradiation as a Technique for Elucidating Synergistic Radiation Effects
DOE Office of Scientific and Technical Information (OSTI.GOV)
Taylor, Caitlin; Bufford, Daniel; Muntifering, Brittany
Materials designed for nuclear reactors undergo microstructural changes resulting from a combination of several environmental factors, including neutron irradiation damage, gas accumulation and elevated temperatures. Typical ion beam irradiation experiments designed for simulating a neutron irradiation environment involve irradiating the sample with a single ion beam and subsequent characterization of the resulting microstructure, often by transmission electron microscopy (TEM). This method does not allow for examination of microstructural effects due to simultaneous gas accumulation and displacement cascade damage, which occurs in a reactor. Sandia’s in situ ion irradiation TEM (I3TEM) offers the unique ability to observe microstructural changes due tomore » irradiation damage caused by concurrent multi-beam ion irradiation in real time. This allows for time-dependent microstructure analysis. A plethora of additional in situ stages can be coupled with these experiments, e.g., for more accurately simulating defect kinetics at elevated reactor temperatures. This work outlines experiments showing synergistic effects in Au using in situ ion irradiation with various combinations of helium, deuterium and Au ions, as well as some initial work on materials utilized in tritium-producing burnable absorber rods (TPBARs): zirconium alloys and LiAlO2.« less
Fukuda, Makoto; Kiran Kumar, N. A. P.; Koyanagi, Takaaki; ...
2016-07-02
We performed a neutron irradiation to single crystal pure tungsten in the mixed spectrum High Flux Isotope Reactor (HFIR). In order to investigate the influences of neutron energy spectrum, the microstructure and irradiation hardening were compared with previous data obtained from the irradiation campaigns in the mixed spectrum Japan Material Testing Reactor (JMTR) and the sodium-cooled fast reactor Joyo. The irradiation temperatures were in the range of ~90–~800 °C and fast neutron fluences were 0.02–9.00 × 10 25 n/m 2 (E > 0.1 MeV). Post irradiation evaluation included Vickers hardness measurements and transmission electron microscopy. Moreover, the hardness and microstructuremore » changes exhibited a clear dependence on the neutron energy spectrum. The hardness appeared to increase with increasing thermal neutron flux when fast fluence exceeds 1 × 10 25 n/m 2 (E > 0.1 MeV). Finally, irradiation induced precipitates considered to be χ- and σ-phases were observed in samples irradiated to >1 × 10 25 n/m 2 (E > 0.1 MeV), which were pronounced at high dose and due to the very high thermal neutron flux of HFIR. Although the irradiation hardening mainly caused by defects clusters in a low dose regime, the transmutation-induced precipitation appeared to impose additional significant hardening of the tungsten.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Fukuda, Makoto; Kiran Kumar, N. A. P.; Koyanagi, Takaaki
We performed a neutron irradiation to single crystal pure tungsten in the mixed spectrum High Flux Isotope Reactor (HFIR). In order to investigate the influences of neutron energy spectrum, the microstructure and irradiation hardening were compared with previous data obtained from the irradiation campaigns in the mixed spectrum Japan Material Testing Reactor (JMTR) and the sodium-cooled fast reactor Joyo. The irradiation temperatures were in the range of ~90–~800 °C and fast neutron fluences were 0.02–9.00 × 10 25 n/m 2 (E > 0.1 MeV). Post irradiation evaluation included Vickers hardness measurements and transmission electron microscopy. Moreover, the hardness and microstructuremore » changes exhibited a clear dependence on the neutron energy spectrum. The hardness appeared to increase with increasing thermal neutron flux when fast fluence exceeds 1 × 10 25 n/m 2 (E > 0.1 MeV). Finally, irradiation induced precipitates considered to be χ- and σ-phases were observed in samples irradiated to >1 × 10 25 n/m 2 (E > 0.1 MeV), which were pronounced at high dose and due to the very high thermal neutron flux of HFIR. Although the irradiation hardening mainly caused by defects clusters in a low dose regime, the transmutation-induced precipitation appeared to impose additional significant hardening of the tungsten.« less
Evolution of thermo-physical properties and annealing of fast neutron irradiated boron carbide
NASA Astrophysics Data System (ADS)
Gosset, Dominique; Kryger, Bernard; Bonal, Jean-Pierre; Verdeau, Caroline; Froment, Karine
2018-03-01
Boron carbide is widely used as a neutron absorber in most nuclear reactors, in particular in fast neutron ones. The irradiation leads to a large helium production (up to 1022/cm3) together with a strong decrease of the thermal conductivity. In this paper, we have performed thermal diffusivity measurements and X-ray diffraction analyses on boron carbide samples coming from control rods of the French Phenix LMFBR reactor. The burnups range from 1021 to 8.1021/cm3. We first confirm the strong decrease of the thermal conductivity at the low burnup, together with high microstructural modifications: swelling, large micro-strains, high defects density, and disordered-like material conductivity. We observe the microstructural parameters are highly anisotropic, with high micro-strains and flattened coherent diffracting domains along the (00l) direction of the hexagonal structure. Performing heat treatments up to high temperature (2200 °C) allows us to observe the material thermal conductivity and microstructure restoration. It then appears the thermal conductivity healing is correlated to the micro-strain relaxation. We then assume the defects responsible for most of the damage are the helium bubbles and the associated stress fields.
Wu, Yuchen; Su, Bin; Jiang, Lei; Heeger, Alan J
2013-12-03
Precisely aligned organic-liquid-soluble semiconductor microwire arrays have been fabricated by "liquid-liquid-solid" type superoleophobic surfaces directed fluid drying. Aligned organic 1D micro-architectures can be built as high-quality organic field-effect transistors with high mobilities of >10 cm(2) ·V(-1) ·s(-1) and current on/off ratio of more than 10(6) . All these studies will boost the development of 1D microstructures of organic semiconductor materials for potential application in organic electronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Semiconductor neutron detectors
NASA Astrophysics Data System (ADS)
Gueorguiev, Andrey; Hong, Huicong; Tower, Joshua; Kim, Hadong; Cirignano, Leonard; Burger, Arnold; Shah, Kanai
2016-09-01
Lithium Indium Selenide (LiInSe2) has been under development in RMD Inc. and Fisk University for room temperature thermal neutron detection due to a number of promising properties. The recent advances of the crystal growth, material processing, and detector fabrication technologies allowed us to fabricate large detectors with 100 mm2 active area. The thermal neutron detection sensitivity and gamma rejection ratio (GRR) were comparable to 3He tube with 10 atm gas pressure at comparable dimensions. The synthesis, crystal growth, detector fabrication, and characterization are reported in this paper.
Cakmak, Ercan; Kirka, Michael M.; Watkins, Thomas R.; ...
2016-02-23
Theta-shaped specimens were additively manufactured out of Inconel 718 powders using an electron beam melting technique, as a model complex load bearing structure. We employed two different build strategies; producing two sets of specimens. Microstructural and micro-mechanical characterizations were performed using electron back-scatter, synchrotron x-ray and in-situ neutron diffraction techniques. In particular, the cross-members of the specimens were the focus of the synchrotron x-ray and in-situ neutron diffraction measurements. The build strategies employed resulted in the formation of distinct microstructures and crystallographic textures, signifying the importance of build-parameter manipulation for microstructural optimization. Large strain anisotropy of the different lattice planesmore » was observed during in-situ loading. Texture was concluded to have a distinct effect upon both the axial and transverse strain responses of the cross-members. In particular, the (200), (220) and (420) transverse lattice strains all showed unexpected overlapping trends in both builds. This was related to the strong {200} textures along the build/loading direction, providing agreement between the experimental and calculated results.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Hu, Xunxiang; Koyanagi, Takaaki; Fukuda, Makoto
In this paper, pure tungsten samples have been neutron irradiated in HFIR at 90–850 °C to 0.03–2.2 dpa. A dispersed barrier hardening model informed by the available microstructure data has been used to predict the hardness. Comparison of the model predictions and the measured Vickers hardness reveals the dominant hardening contribution at various irradiation conditions. For tungsten samples irradiated in HFIR, the results indicate that voids and dislocation loops contributed to the hardness increase in the low dose region (<0.3 dpa), while the formation of intermetallic second phase precipitation, resulting from transmutation, dominates the radiation-induced strengthening beginning with a relativelymore » modest dose (>0.6 dpa). Finally, the precipitate contribution is most pronounced for the HFIR irradiations, whereas the radiation-induced defect cluster microstructure can rationalize the entirety of the hardness increase observed in tungsten irradiated in the fast neutron spectrum of Joyo and the mixed neutron spectrum of JMTR.« less
NASA Astrophysics Data System (ADS)
Krsjak, Vladimir; Dai, Yong
2015-10-01
This paper presents the use of an internal 44Ti/44Sc radioisotope source for a direct microstructural characterization of ferritic/martensitic (f/m) steels after irradiation in targets of spallation neutron sources. Gamma spectroscopy measurements show a production of ∼1MBq of 44Ti per 1 g of f/m steels irradiated at 1 dpa (displaced per atom) in the mixed proton-neutron spectrum at the Swiss spallation neutron source (SINQ). In the decay chain 44Ti → 44Sc → 44Ca, positrons are produced together with prompt gamma rays which enable the application of different positron annihilation spectroscopy (PAS) analyses, including lifetime and Doppler broadening spectroscopy. Due to the high production yield, long half-life and relatively high energy of positrons of 44Ti, this methodology opens up new potential for simple, effective and inexpensive characterization of radiation induced defects in f/m steels irradiated in a spallation target.
Microstructure of Amorphous and Semi-Crystalline Polymers.
1981-06-07
of these materials. Further, the occurrence of nodular structures is difficult to reconcile with the results of studies of small angle neutron ...scattering and small angle neutron scattering studies of the same materials. Based on the combined results of these studies , it is suggested that the nodular...relevance here were reviewed by Flory.’ In addition to these, the results of studies using small angle neutron scattering’ and wide angle X-ray scattering
Mechanisms of transport and electron transfer at conductive polymer/liquid interfaces
NASA Astrophysics Data System (ADS)
Ratcliff, Erin
Organic semiconductors (OSCs) have incredible prospects for next-generation, flexible electronic devices including bioelectronics, thermoelectrics, opto-electronics, and energy storage and conversion devices. Yet many fundamental challenges still exist. First, solution processing prohibits definitive control over microstructure, which is fundamental for controlling electrical, ionic, and thermal transport properties. Second, OSCs generally suffer from poor electrical conductivities due to a combination of low carriers and low mobility. Third, polymeric semiconductors have potential-dependent, dynamically evolving electronic and chemical states, leading to complex interfacial charge transfer properties in contact with liquids. This talk will focus on the use of alternative synthetic strategies of oxidative chemical vapor deposition and electrochemical deposition to control physical, electronic, and chemical structure. We couple our synthetic efforts with energy-, time-, and spatially resolved spectroelectrochemical and microscopy techniques to understand the critical interfacial chemistry-microstructure-property relationships: first at the macroscale, and then moving towards the nanoscale. In particular, approaches to better understand electron transfer events at polymer/liquid interfaces as a function of: 1.) chemical composition; 2.) electronic density of states (DOS); and 3.) crystallinity and microstructure will be discussed.
Coherent photoluminescence excitation spectroscopy of semicrystalline polymeric semiconductors
NASA Astrophysics Data System (ADS)
Silva, Carlos; Grégoire, Pascal; Thouin, Félix
In polymeric semiconductors, the competition between through-bond (intrachain) and through-space (interchain) electronic coupling determines two-dimensional spatial coherence of excitons. The balance of intra- and interchain excitonic coupling depends very sensitively on solid-state microstructure of the polymer film (polycrystalline, semicrystalline with amorphous domains, etc.). Regioregular poly(3-hexylthiophene) has emerged as a model material because its photoluminescence (PL) spectral lineshape reveals intricate information on the magnitude of excitonic coupling, the extent of energetic disorder, and on the extent to which the disordered energy landscape is correlated. I discuss implementation of coherent two-dimensional electronic spectroscopy. We identify cross peaks between 0-0 and 0-1 excitation peaks, and we measure their time evolution, which we interpret within the context of a hybrid HJ aggregate model. By measurement of the homogeneous linewidth in diverse polymer microstructures, we address the nature of optical transitions within such hynbrid aggregate model. These depend strongly on sample processing, and I discuss the relationship between microstructure, steady-state absorption and PL spectral lineshape, and 2D coherent PL excitation spectral lineshapes.
Three-Dimensional FIB/EBSD Characterization of Irradiated HfAl3-Al Composite
DOE Office of Scientific and Technical Information (OSTI.GOV)
Hua, Zilong; Guillen, Donna Post; Harris, William
2016-09-01
A thermal neutron absorbing material, comprised of 28.4 vol% HfAl3 in an Al matrix, was developed to serve as a conductively cooled thermal neutron filter to enable fast flux materials and fuels testing in a pressurized water reactor. In order to observe the microstructural change of the HfAl3-Al composite due to neutron irradiation, an EBSD-FIB characterization approach is developed and presented in this paper. Using the focused ion beam (FIB), the sample was fabricated to 25µm × 25µm × 20 µm and mounted on the grid. A series of operations were carried out repetitively on the sample top surface tomore » prepare it for scanning electron microscopy (SEM). First, a ~100-nm layer was removed by high voltage FIB milling. Then, several cleaning passes were performed on the newly exposed surface using low voltage FIB milling to improve the SEM image quality. Last, the surface was scanned by Electron Backscattering Diffraction (EBSD) to obtain the two-dimensional image. After 50 to 100 two-dimensional images were collected, the images were stacked to reconstruct a three-dimensional model using DREAM.3D software. Two such reconstructed three-dimensional models were obtained from samples of the original and post-irradiation HfAl3-Al composite respectively, from which the most significant microstructural change caused by neutron irradiation apparently is the size reduction of both HfAl3 and Al grains. The possible reason is the thermal expansion and related thermal strain from the thermal neutron absorption. This technique can be applied to three-dimensional microstructure characterization of irradiated materials.« less
Gigax, Jonathan G.; Kim, Hyosim; Aydogan, Eda; ...
2017-05-16
Although accelerator-based ion irradiation has been widely accepted to simulate neutron damage, neutron-atypical features need to be carefully investigated. In this study, we have shown that Coulomb force drag by ion beams can introduce significant amounts of carbon, nitrogen, and oxygen into target materials even under ultra-high vacuum conditions. The resulting compositional and microstructural changes dramatically suppress void swelling. By applying a beam-filtering technique, introduction of vacuum contaminants is greatly minimized and the true swelling resistance of the alloys is revealed and matches neutron behavior closely. These findings are a significant step toward developing standardized procedures for emulating neutron damage.
Lee, Eunha; Benayad, Anass; Shin, Taeho; Lee, HyungIk; Ko, Dong-Su; Kim, Tae Sang; Son, Kyoung Seok; Ryu, Myungkwan; Jeon, Sanghun; Park, Gyeong-Su
2014-01-01
Interest in oxide semiconductors stems from benefits, primarily their ease of process, relatively high mobility (0.3–10 cm2/vs), and wide-bandgap. However, for practical future electronic devices, the channel mobility should be further increased over 50 cm2/vs and wide-bandgap is not suitable for photo/image sensor applications. The incorporation of nitrogen into ZnO semiconductor can be tailored to increase channel mobility, enhance the optical absorption for whole visible light and form uniform micro-structure, satisfying the desirable attributes essential for high performance transistor and visible light photo-sensors on large area platform. Here, we present electronic, optical and microstructural properties of ZnON, a composite of Zn3N2 and ZnO. Well-optimized ZnON material presents high mobility exceeding 100 cm2V−1s−1, the band-gap of 1.3 eV and nanocrystalline structure with multiphase. We found that mobility, microstructure, electronic structure, band-gap and trap properties of ZnON are varied with nitrogen concentration in ZnO. Accordingly, the performance of ZnON-based device can be adjustable to meet the requisite of both switch device and image-sensor potentials. These results demonstrate how device and material attributes of ZnON can be optimized for new device strategies in display technology and we expect the ZnON will be applicable to a wide range of imaging/display devices. PMID:24824778
In Situ TEM Multi-Beam Ion Irradiation as a Technique for Elucidating Synergistic Radiation Effects
DOE Office of Scientific and Technical Information (OSTI.GOV)
Taylor, Caitlin Anne; Bufford, Daniel Charles; Muntifering, Brittany Rana
Materials designed for nuclear reactors undergo microstructural changes resulting from a combination of several environmental factors, including neutron irradiation damage, gas accumulation and elevated temperatures. Typical ion beam irradiation experiments designed for simulating a neutron irradiation environment involve irradiating the sample with a single ion beam and subsequent characterization of the resulting microstructure, often by transmission electron microscopy (TEM). This method does not allow for examination of microstructural effects due to simultaneous gas accumulation and displacement cascade damage, which occurs in a reactor. Sandia’s in situ ion irradiation TEM (I 3TEM) offers the unique ability to observe microstructural changes duemore » to irradiation damage caused by concurrent multi-beam ion irradiation in real time. This allows for time-dependent microstructure analysis. A plethora of additional in situ stages can be coupled with these experiments, e.g., for more accurately simulating defect kinetics at elevated reactor temperatures. As a result, this work outlines experiments showing synergistic effects in Au using in situ ion irradiation with various combinations of helium, deuterium and Au ions, as well as some initial work on materials utilized in tritium-producing burnable absorber rods (TPBARs): zirconium alloys and LiAlO 2.« less
In Situ TEM Multi-Beam Ion Irradiation as a Technique for Elucidating Synergistic Radiation Effects
Taylor, Caitlin Anne; Bufford, Daniel Charles; Muntifering, Brittany Rana; ...
2017-09-29
Materials designed for nuclear reactors undergo microstructural changes resulting from a combination of several environmental factors, including neutron irradiation damage, gas accumulation and elevated temperatures. Typical ion beam irradiation experiments designed for simulating a neutron irradiation environment involve irradiating the sample with a single ion beam and subsequent characterization of the resulting microstructure, often by transmission electron microscopy (TEM). This method does not allow for examination of microstructural effects due to simultaneous gas accumulation and displacement cascade damage, which occurs in a reactor. Sandia’s in situ ion irradiation TEM (I 3TEM) offers the unique ability to observe microstructural changes duemore » to irradiation damage caused by concurrent multi-beam ion irradiation in real time. This allows for time-dependent microstructure analysis. A plethora of additional in situ stages can be coupled with these experiments, e.g., for more accurately simulating defect kinetics at elevated reactor temperatures. As a result, this work outlines experiments showing synergistic effects in Au using in situ ion irradiation with various combinations of helium, deuterium and Au ions, as well as some initial work on materials utilized in tritium-producing burnable absorber rods (TPBARs): zirconium alloys and LiAlO 2.« less
DEPRON dosimeter for ``Lomonosov'' satellite
NASA Astrophysics Data System (ADS)
Brilkov, Ivan; Vedenkin, Nikolay; Panasyuk, Mikhail; Amelyushkin, Aleksandr; Petrov, Vasily; Nechayev, Oleg; Benghin, Victor
It is commonly known, that cosmic radiation generates negative impact on the human body during space flight. The structure of the radiation fields in the near-Earth space was studied during intensive research of recent decades. Huge number of dosimetry studies was conducted on manned and unmanned space vehicles in order to solve the problem of radiation safety humans during space flights. It should be noted that most of the measurements was made onboard the spacecrafts, flying along the orbits with inclination of up to 51.6 degrees. Due to the prospect of manned missions at the orbits with larger inclination it seems advisable to conduct preliminary detailed dosimetry measurements at high-altitude orbit, for which the "Lomonosov" satellite provides good opportunities. We chose a method of cosmic radiation dosimetry based on semiconductor detectors. Proposed in the late 70's this method is widely used onboard spacecraft, including full-time radiation monitoring onboard the ISS. Recently it has been improved, providing an opportunity to register not only the absorbed dose of charged particles radiation, but also range of their ionization losses. It allowed assessment of equivalent dose. Appropriate procedure based on using of a telescope consisting of two semiconductor detectors provided a basis of the developed unit. It should be noted that not only the charged particles contribute significantly in the equivalent dose, but also neutrons do. Semiconductor detectors have low sensitivity to neutron radiation and are not sufficient for detecting the expected flux of neutrons. It was therefore decided to add thermal neutrons counter to the developed device in order to provide an opportunity of estimation of neutron flux variations along the satellite trajectory. A gas-discharge counter SI-13N, operated in a mode of corona discharge was chosen as a neutron detector. This method of neutron detection is well-proven and used many times in SINP MSU experiments. Thus, the appearance of the instrument DEPRON (Dosimeter of Electrons, PROtons and Neutrons) was determined. DEPRON is intended for registration of the absorbed doses and linear energy transfer spectra for high-energy electrons, protons and nuclei of space radiation, as well as registration of thermal and slow neutrons. The experiment based on DEPRON instrument is aimed at the studies of the distribution of space radiation dose rate at high latitude paths in order to study the flight paths of perspective manned spacecraft. Present work provides a brief description of the DEPRON instrument, its calibration results and the structure of the output data.
Single Event Upset in Static Random Access Memories in Atmospheric Neutron Environments
NASA Astrophysics Data System (ADS)
Arita, Yutaka; Takai, Mikio; Ogawa, Izumi; Kishimoto, Tadafumi
2003-07-01
Single-event upsets (SEUs) in a 0.4 μm 4 Mbit complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) were investigated in various atmospheric neutron environments at sea level, at an altitude of 2612 m mountain, at an altitude of commercial airplane, and at an underground depth of 476 m. Neutron-induced SEUs increase with the increase in altitude. For a device with a borophosphosilicate glass (BPSG) film, SEU rates induced by thermal neutrons increase with the decrease in the cell charge of a memory cell. A thermal neutron-induced SEU is significant in SRAMs with a small cell charge. With the conditions of small cell charge, thermal neutron-induced SEUs account for 60% or more of the total neutron-induced SEUs. The SEU rate induced by atmospheric thermal neutrons can be estimated by an acceleration test using 252Cf.
Detection system for neutron β decay correlations in the UCNB and Nab experiments
Broussard, L. J.; Oak Ridge National Lab.; Zeck, B. A.; ...
2016-12-19
Here, we describe a detection system designed to precisely measure multiple correlations in neutron β decay. Furthermore, the system is based on thick, large area, highly segmented silicon detectors developed in collaboration with Micron Semiconductor, Ltd. The prototype system meets specifications of energy thresholds below 10 keV, energy resolution of ~3 keV FWHM, and rise time of ~50 ns with 19 of the 127 detector pixels instrumented. We have demonstrated the coincident detection of β particles and recoil protons from neutron β decay, using ultracold neutrons at the Los Alamos Neutron Science Center, . The fully instrumented detection system willmore » be implemented in the UCNB and Nab experiments, to determine the neutron β decay parameters B, a, and b.« less
Minimum activation martensitic alloys for surface disposal after exposure to neutron flux
Lechtenberg, Thomas
1985-01-01
Steel alloys for long-term exposure to neutron flux have a martensitic microstructure and contain chromium, carbon, tungsten, vanadium and preferably titanium. Activation of the steel is held to within acceptable limits for eventual surface disposal by stringently controlling the impurity levels of Ni, Mo, Cu, N, Co, Nb, Al and Mn.
Structural characterization of semicrystalline polymer morphologies by imaging-SANS
NASA Astrophysics Data System (ADS)
Radulescu, A.; Fetters, L. J.; Richter, D.
2012-02-01
Control and optimization of polymer properties require the global knowledge of the constitutive microstructures of polymer morphologies in various conditions. The microstructural features can be typically explored over a wide length scale by combining pinhole-, focusing- and ultra-small-angle neutron scattering (SANS) techniques. Though it proved to be a successful approach, this involves major efforts related to the use of various scattering instruments and large amount of samples and the need to ensure the same crystallization kinetics for the samples investigated at various facilities, in different sample cell geometries and at different time intervals. With the installation and commissioning of the MgF2 neutron lenses at the KWS-2 SANS diffractometer installed at the Heinz Maier-Leibnitz neutron source (FRMII reactor) in Garching, a wide Q-range, between 10-4Å-1 and 0.5Å-1, can be covered at a single instrument. This enables investigation of polymer microstructures over a length scale from lnm up to 1μm, while the overall polymer morphology can be further examined up to 100μm by optical microscopy (including crossed polarizers). The study of different semi-crystalline polypropylene-based polymers in solution is discussed and the new imaging-SANS approach allowing for an unambiguous and complete structural characterization of polymer morphologies is presented.
Visible scintillation photodetector device incorporating chalcopyrite semiconductor crystals
DOE Office of Scientific and Technical Information (OSTI.GOV)
Stowe, Ashley C.; Burger, Arnold
2017-04-04
A photodetector device, including: a scintillator material operable for receiving incident radiation and emitting photons in response; a photodetector material coupled to the scintillator material operable for receiving the photons emitted by the scintillator material and generating a current in response, wherein the photodetector material includes a chalcopyrite semiconductor crystal; and a circuit coupled to the photodetector material operable for characterizing the incident radiation based on the current generated by the photodetector material. Optionally, the scintillator material includes a gamma scintillator material and the incident radiation received includes gamma rays. Optionally, the photodetector material is further operable for receiving thermalmore » neutrons and generating a current in response. The circuit is further operable for characterizing the thermal neutrons based on the current generated by the photodetector material.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
S Kim; M Jang; H Yang
2011-12-31
Organic field-effect transistors (OFETs) are fabricated by depositing a thin film of semiconductor on the functionalized surface of a SiO{sub 2} dielectric. The chemical and morphological structures of the interface between the semiconductor and the functionalized dielectric are critical for OFET performance. We have characterized the effect of the affinity between semiconductor and functionalized dielectric on the properties of the semiconductor-dielectric interface. The crystalline microstructure/nanostructure of the pentacene semiconductor layers, grown on a dielectric substrate that had been functionalized with either poly(4-vinyl pyridine) or polystyrene (to control hydrophobicity), and grown under a series of substrate temperatures and deposition rates, weremore » characterized by X-ray diffraction, photoemission spectroscopy, and atomic force microscopy. By comparing the morphological features of the semiconductor thin films with the device characteristics (field-effect mobility, threshold voltage, and hysteresis) of the OFET devices, the effect of affinity-driven properties on charge modulation, charge trapping, and charge carrier transport could be described.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Gigax, Jonathan G.; Kim, Hyosim; Aydogan, Eda
Although accelerator-based ion irradiation has been widely accepted to simulate neutron damage, neutron-atypical features need to be carefully investigated. In this study, we have shown that Coulomb force drag by ion beams can introduce significant amounts of carbon, nitrogen, and oxygen into target materials even under ultra-high vacuum conditions. The resulting compositional and microstructural changes dramatically suppress void swelling. By applying a beam-filtering technique, introduction of vacuum contaminants is greatly minimized and the true swelling resistance of the alloys is revealed and matches neutron behavior closely. These findings are a significant step toward developing standardized procedures for emulating neutron damage.
Embrittlement of low copper VVER 440 surveillance samples neutron-irradiated to high fluences
NASA Astrophysics Data System (ADS)
Miller, M. K.; Russell, K. F.; Kocik, J.; Keilova, E.
2000-11-01
An atom probe tomography microstructural characterization of low copper (0.06 at.% Cu) surveillance samples from a VVER 440 reactor has revealed manganese and silicon segregation to dislocations and other ultrafine features in neutron-irradiated base and weld materials (fluences 1×10 25 m-2 and 5×10 24 m-2, E>0.5 MeV, respectively). The results indicate that there is an additional mechanism of embrittlement during neutron irradiation that manifests itself at high fluences.
Neutron-diffraction measurement of residual stresses in Al-Cu cold-cut welding
NASA Astrophysics Data System (ADS)
Fiori, F.; Marcantoni, M.
Usually, when it is necessary to join different materials with a large difference in their melting points, welding should be avoided. To overcome this problem we designed and built a device to obtain cold-cut welding, which is able to strongly decrease oxidation problems of the surfaces to be welded. Thanks to this device it is possible to achieve good joining between different pairs of materials (Al-Ti, Cu-Al, Cu-Al alloys) without reaching the material melting point. The mechanical and microstructural characterisation of the joining and the validation of its quality were obtained using several experimental methods. In particular, in this work neutron-diffraction experiments for the evaluation of residual stresses in Cu-Al junctions are described, carried out at the G5.2 diffractometer of LLB, Saclay. Neutron-diffraction results are presented and related to other experimental tests such as microstructural characterisation (through optical and scanning electron microscopy) and mechanical characterisation (tensile-strength tests) of the welded interface.
NASA Astrophysics Data System (ADS)
Castin, N.; Bakaev, A.; Bonny, G.; Sand, A. E.; Malerba, L.; Terentyev, D.
2017-09-01
We propose an object kinetic Monte Carlo (OKMC) model for describing the microstructural evolution in pure tungsten under neutron irradiation. We here focus on low doses (under 1 dpa), and we neglect transmutation in first approximation. The emphasis is mainly centred on an adequate description of neutron irradiation, the subsequent introduction of primary defects, and their thermal diffusion properties. Besides grain boundaries and the dislocation network, our model includes the contribution of carbon impurities, which are shown to have a strong influence on the onset of void swelling. Our parametric study analyses the quality of our model in detail, and confronts its predictions with experimental microstructural observations with satisfactory agreement. We highlight the importance for an accurate determination of the dissolved carbon content in the tungsten matrix, and we advocate for an accurate description of atomic collision cascades, in light of the sensitivity of our results with respect to correlated recombination.
Lee, Wi Hyoung; Min, Honggi; Park, Namwoo; Lee, Junghwi; Seo, Eunsuk; Kang, Boseok; Cho, Kilwon; Lee, Hwa Sung
2013-08-28
Research into printing techniques has received special attention for the commercialization of cost-efficient organic electronics. Here, we have developed a capillary pen printing technique to realize a large-area pattern array of organic transistors and systematically investigated self-organization behavior of printed soluble organic semiconductor ink. The capillary pen-printed deposits of organic semiconductor, 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS_PEN), was well-optimized in terms of morphological and microstructural properties by using ink with mixed solvents of chlorobenzene (CB) and 1,2-dichlorobenzene (DCB). Especially, a 1:1 solvent ratio results in the best transistor performances. This result is attributed to the unique evaporation characteristics of the TIPS_PEN deposits where fast evaporation of CB induces a morphological evolution at the initial printed position, and the remaining DCB with slow evaporation rate offers a favorable crystal evolution at the pinned position. Finally, a large-area transistor array was facilely fabricated by drawing organic electrodes and active layers with a versatile capillary pen. Our approach provides an efficient printing technique for fabricating large-area arrays of organic electronics and further suggests a methodology to enhance their performances by microstructural control of the printed organic semiconducting deposits.
Modeling Percolation in Polymer Nanocomposites by Stochastic Microstructuring
Soto, Matias; Esteva, Milton; Martínez-Romero, Oscar; Baez, Jesús; Elías-Zúñiga, Alex
2015-01-01
A methodology was developed for the prediction of the electrical properties of carbon nanotube-polymer nanocomposites via Monte Carlo computational simulations. A two-dimensional microstructure that takes into account waviness, fiber length and diameter distributions is used as a representative volume element. Fiber interactions in the microstructure are identified and then modeled as an equivalent electrical circuit, assuming one-third metallic and two-thirds semiconductor nanotubes. Tunneling paths in the microstructure are also modeled as electrical resistors, and crossing fibers are accounted for by assuming a contact resistance associated with them. The equivalent resistor network is then converted into a set of linear equations using nodal voltage analysis, which is then solved by means of the Gauss–Jordan elimination method. Nodal voltages are obtained for the microstructure, from which the percolation probability, equivalent resistance and conductivity are calculated. Percolation probability curves and electrical conductivity values are compared to those found in the literature. PMID:28793594
Analysis of Radiation Effects in Silicon using Kinetic Monte Carlo Methods
Hehr, Brian Douglas
2014-11-25
The transient degradation of semiconductor device performance under irradiation has long been an issue of concern. Neutron irradiation can instigate the formation of quasi-stable defect structures, thereby introducing new energy levels into the bandgap that alter carrier lifetimes and give rise to such phenomena as gain degradation in bipolar junction transistors. Normally, the initial defect formation phase is followed by a recovery phase in which defect-defect or defect-dopant interactions modify the characteristics of the damaged structure. A kinetic Monte Carlo (KMC) code has been developed to model both thermal and carrier injection annealing of initial defect structures in semiconductor materials.more » The code is employed to investigate annealing in electron-irradiated, p-type silicon as well as the recovery of base current in silicon transistors bombarded with neutrons at the Los Alamos Neutron Science Center (LANSCE) “Blue Room” facility. Our results reveal that KMC calculations agree well with these experiments once adjustments are made, within the appropriate uncertainty bounds, to some of the sensitive defect parameters.« less
A quick method for AlCu interconnect electromigration performance predicting and monitoring
NASA Astrophysics Data System (ADS)
Zhang, Wenjie; Yi, Leeward; Tao, Kai; Ma, Yue; Chang, Pingyi; Mao, Duli; Wu, Jin; Zou, S. C.
2006-05-01
The film properties and microstructures of (bottom)Si/SiO2/Ti(top) and (bottom)Si/SiO2/Ti/TiN/AlCu(top) stacks deposited by different processes were characterized. The resistivities of thin Ti films and the reflectivities of AlCu alloy films were found to correlate with the microstructure as well as the mean time to failure (MTTF) in the electromigration (EM) test. A quick-turn monitor for AlCu interconnect reliability in the semiconductor manufacturing industry was established.
Microstructural processes in irradiated materials
DOE Office of Scientific and Technical Information (OSTI.GOV)
Byun, Thak Sang; Morgan, Dane; Jiao, Zhijie
2016-04-01
This is an editorial article (preface) for the publication of symposium papers in the Journal of Nuclear materials: These proceedings contain the papers presented at two symposia, the Microstructural Processes in Irradiated Materials (MPIM) and Characterization of Nuclear Reactor Materials and Components with Neutron and Synchrotron Radiation, held in the TMS 2015, 144th Annual Meeting & Exhibition at Walt Disney World, Orlando, Florida, USA on March 15–19, 2015.
NASA Astrophysics Data System (ADS)
Yoon, Myung-Han
Two novel classes of organic semiconductors based on perfluoroarene/arene-modified oligothiophenes and perfluoroacyl/acyl-derivatized quaterthiophens are developed. The frontier molecular orbital energies of these compounds are studied by optical spectroscopy and electrochemistry while solid-state/film properties are investigated by thermal analysis, x-ray diffraction, and scanning electron microscopy. Organic thin film transistors (OTFTs) performance parameters are discussed in terms of the interplay between semiconductor molecular energetics and film morphologies/microstructures. For perfluoroarene-thiophene oligomer systems, majority charge carrier type and mobility exhibit a strong correlation with the regiochemistry of perfluoroarene incorporation. In quaterthiophene-based semiconductors, carbonyl-functionalization allows tuning of the majority carrier type from p-type to ambipolar and to n-type. In situ conversion of a p-type semiconducting film to n-type film is also demonstrated. Very thin self-assembled or spin-on organic dielectric films have been integrated into OTFTs to achieve 1 - 2 V operating voltages. These new dielectrics are deposited either by layer-by-layer solution phase deposition of molecular precursors or by spin-coating a mixture of polymer and crosslinker, resulting in smooth and virtually pinhole-free thin films having exceptionally large capacitances (300--700 nF/cm2) and low leakage currents (10 -9 - 10-7 A/cm2). These organic dielectrics are compatible with various vapor- or solution-deposited p- and n-channel organic semiconductors. Furthermore, it is demonstrated that spin-on crosslinked-polymer-blend dielectrics can be employed for large-area/patterned electronics, and complementary inverters. A general approach for probing semiconductor-dielectric interface effects on OTFT performance parameters using bilayer gate dielectrics is presented. Organic semiconductors having p-, n-type, or ambipolar majority charge carriers are grown on six different bilayer dielectrics consisting of various spin-coated polymers/HMDS on 300 nm SiO2/p+-Si, followed by transistor fabrication. In case of air-sensitive n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters while film morphologies and microstructures remain unchanged. In contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by dielectric surface modifications. The origin of the mobility sensitivity to the various surface chemistries in the case of air sensitive n-type semiconductors is found to be due to electron trapping by silanol and carbonyl functionalities at the semiconductor-dielectric interface.
Irradiation response of delta ferrite in as-cast and thermally aged cast stainless steel
DOE Office of Scientific and Technical Information (OSTI.GOV)
Li, Zhangbo; Lo, Wei-Yang; Chen, Yiren
To enable the life extension of Light Water Reactors (LWRs) beyond 60 years, it is critical to gain adequate knowledge for making conclusive predictions to assure the integrity of duplex stainless steel reactor components, e.g. primary pressure boundary and reactor vessel internal. Microstructural changes in the ferrite of thermally aged, neutron irradiated only, and neutron irradiated after being thermally aged cast austenitic stainless steels (CASS) were investigated using atom probe tomography. The thermal aging was performed at 400 °C for 10,000 h and the irradiation was conducted in the Halden reactor at ~315 °C to 0.08 dpa (5.6 × 10more » 19 n/cm 2 E > 1 MeV). Low dose neutron irradiation at a dose rate of 5 × 10 -9 dpa/s was found to induce spinod,al decomposition in the ferrite of as-cast microstructure, and further to enhance the spinodal decomposition in the thermally aged cast alloys. Regarding the G-phase precipitates, the neutron irradiation dramatically increases the precipitate size, and alters the composition of the precipitates with increased, Mn, Ni, Si and Mo and reduced Fe and Cr contents. Lastly, The results have shown that low dose neutron irradiation can further accelerate the degradation of ferrite in a duplex stainless steel at the LWR relevant condition.« less
Irradiation response of delta ferrite in as-cast and thermally aged cast stainless steel
Li, Zhangbo; Lo, Wei-Yang; Chen, Yiren; ...
2015-08-08
To enable the life extension of Light Water Reactors (LWRs) beyond 60 years, it is critical to gain adequate knowledge for making conclusive predictions to assure the integrity of duplex stainless steel reactor components, e.g. primary pressure boundary and reactor vessel internal. Microstructural changes in the ferrite of thermally aged, neutron irradiated only, and neutron irradiated after being thermally aged cast austenitic stainless steels (CASS) were investigated using atom probe tomography. The thermal aging was performed at 400 °C for 10,000 h and the irradiation was conducted in the Halden reactor at ~315 °C to 0.08 dpa (5.6 × 10more » 19 n/cm 2 E > 1 MeV). Low dose neutron irradiation at a dose rate of 5 × 10 -9 dpa/s was found to induce spinod,al decomposition in the ferrite of as-cast microstructure, and further to enhance the spinodal decomposition in the thermally aged cast alloys. Regarding the G-phase precipitates, the neutron irradiation dramatically increases the precipitate size, and alters the composition of the precipitates with increased, Mn, Ni, Si and Mo and reduced Fe and Cr contents. Lastly, The results have shown that low dose neutron irradiation can further accelerate the degradation of ferrite in a duplex stainless steel at the LWR relevant condition.« less
Low temperature neutron irradiation effects on microstructure and tensile properties of molybdenum
DOE Office of Scientific and Technical Information (OSTI.GOV)
Li, Meimei; Eldrup, M.; Byun, Thak Sang
2008-01-01
Polycrystalline molybdenum was irradiated in the hydraulic tube facility at the High Flux Isotope Reactor to doses ranging from 7.2 x 10{sup -5} to 0.28 dpa at {approx} 80 C. As-irradiated microstructure was characterized by room-temperature electrical resistivity measurements, transmission electron microscopy (TEM) and positron annihilation spectroscopy (PAS). Tensile tests were carried out between -50 and 100 C over the strain rate range 1 x 10{sup -5} to 1 x 10{sup -2} s{sup -1}. Fractography was performed by scanning electron microscopy (SEM), and the deformation microstructure was examined by TEM after tensile testing. Irradiation-induced defects became visible by TEM atmore » {approx}0.001 dpa. Both their density and mean size increased with increasing dose. Submicroscopic three-dimensional cavities were detected by PAS even at {approx}0.0001 dpa. The cavity density increased with increasing dose, while their mean size and size distribution was relatively insensitive to neutron dose. It is suggested that the formation of visible dislocation loops was predominantly a nucleation and growth process, while in-cascade vacancy clustering may be significant in Mo. Neutron irradiation reduced the temperature and strain rate dependence of the yield stress, leading to radiation softening in Mo at lower doses. Irradiation had practically no influence on the magnitude and the temperature and strain rate dependence of the plastic instability stress.« less
Radiation evaluation study of LSI RAM technologies
NASA Astrophysics Data System (ADS)
Dinger, G. L.; Knoll, M. G.
1980-01-01
Five commercial LSI static random access memory technologies having a 1 kilobit capacity were radiation characterized. Arrays from the transistor-transistor-logic (TTL), Schottky TTL, n-channel metal oxide semiconductor, complementary metal oxide semiconductor (CMOS), and CMOS/silicon on sapphire families were evaluated. Radiation failure thresholds for gamma doserate logic upset, total gamma dose survivability, and neutron fluence survivability were determined. A brief analysis of the radiation failure mechanism for each of the logic families tested is included.
Neutron absorption of Al-Si-Mg-B{sub 4}C composite
DOE Office of Scientific and Technical Information (OSTI.GOV)
Abdullah, Yusof, E-mail: yusofabd@nuclearmalaysia.gov.my; Yusof, Mohd Reusmaazran; Ibrahim, Anis Syukriah
2016-01-22
Al-Si-Mg-B{sub 4}C composites containing 2-8 wt% of B{sub 4}C were prepared by stir casting technique. Homogenization treatment was carried out at temperatures of 540°C for 4 houra and followed by ageing at 180°C for 2 houra. Microstructure and phase identification were studied by scanning electron microscopy (SEM) and X-ray diffraction (XRD) respectively. Neutron absorption study was investigated using neutron source Am/Be{sup 241}. The result indicated that higher B{sub 4}C content improved the neutron absorption property. Meanwhile homogeneity of the composite was increased by ageing processes. This composite is potential to be used as neutron shielding material especially for nuclear reactormore » application.« less
Microstructural evolution in fast-neutron-irradiated austenitic stainless steels
DOE Office of Scientific and Technical Information (OSTI.GOV)
Stoller, R.E.
1987-12-01
The present work has focused on the specific problem of fast-neutron-induced radiation damage to austenitic stainless steels. These steels are used as structural materials in current fast fission reactors and are proposed for use in future fusion reactors. Two primary components of the radiation damage are atomic displacements (in units of displacements per atom, or dpa) and the generation of helium by nuclear transmutation reactions. The radiation environment can be characterized by the ratio of helium to displacement production, the so-called He/dpa ratio. Radiation damage is evidenced microscopically by a complex microstructural evolution and macroscopically by density changes and alteredmore » mechanical properties. The purpose of this work was to provide additional understanding about mechanisms that determine microstructural evolution in current fast reactor environments and to identify the sensitivity of this evolution to changes in the He/dpa ratio. This latter sensitivity is of interest because the He/dpa ratio in a fusion reactor first wall will be about 30 times that in fast reactor fuel cladding. The approach followed in the present work was to use a combination of theoretical and experimental analysis. The experimental component of the work primarily involved the examination by transmission electron microscopy of specimens of a model austenitic alloy that had been irradiated in the Oak Ridge Research Reactor. A major aspect of the theoretical work was the development of a comprehensive model of microstructural evolution. This included explicit models for the evolution of the major extended defects observed in neutron irradiated steels: cavities, Frank faulted loops and the dislocation network. 340 refs., 95 figs., 18 tabs.« less
Microstructured silicon neutron detectors for security applications
NASA Astrophysics Data System (ADS)
Esteban, S.; Fleta, C.; Guardiola, C.; Jumilla, C.; Pellegrini, G.; Quirion, D.; Rodriguez, J.; Lozano, M.
2014-12-01
In this paper we present the design and performance of a perforated thermal neutron silicon detector with a 6LiF neutron converter. This device was manufactured within the REWARD project workplace whose aim is to develop and enhance technologies for the detection of nuclear and radiological materials. The sensor perforated structure results in a higher efficiency than that obtained with an equivalent planar sensor. The detectors were tested in a thermal neutron beam at the nuclear reactor at the Instituto Superior Técnico in Lisbon and the intrinsic detection efficiency for thermal neutrons and the gamma sensitivity were obtained. The Geant4 Monte Carlo code was used to simulate the experimental conditions, i.e. thermal neutron beam and the whole detector geometry. An intrinsic thermal neutron detection efficiency of 8.6%±0.4% with a discrimination setting of 450 keV was measured.
Richards, Jeffrey J; Gagnon, Cedric V L; Krzywon, Jeffery R; Wagner, Norman J; Butler, Paul D
2017-04-10
A procedure for the operation of a new dielectric RheoSANS instrument capable of simultaneous interrogation of the electrical, mechanical and microstructural properties of complex fluids is presented. The instrument consists of a Couette geometry contained within a modified forced convection oven mounted on a commercial rheometer. This instrument is available for use on the small angle neutron scattering (SANS) beamlines at the National Institute of Standards and Technology (NIST) Center for Neutron Research (NCNR). The Couette geometry is machined to be transparent to neutrons and provides for measurement of the electrical properties and microstructural properties of a sample confined between titanium cylinders while the sample undergoes arbitrary deformation. Synchronization of these measurements is enabled through the use of a customizable program that monitors and controls the execution of predetermined experimental protocols. Described here is a protocol to perform a flow sweep experiment where the shear rate is logarithmically stepped from a maximum value to a minimum value holding at each step for a specified period of time while frequency dependent dielectric measurements are made. Representative results are shown from a sample consisting of a gel composed of carbon black aggregates dispersed in propylene carbonate. As the gel undergoes steady shear, the carbon black network is mechanically deformed, which causes an initial decrease in conductivity associated with the breaking of bonds comprising the carbon black network. However, at higher shear rates, the conductivity recovers associated with the onset of shear thickening. Overall, these results demonstrate the utility of the simultaneous measurement of the rheo-electro-microstructural properties of these suspensions using the dielectric RheoSANS geometry.
Modeling of displacement damage in silicon carbide detectors resulting from neutron irradiation
NASA Astrophysics Data System (ADS)
Khorsandi, Behrooz
There is considerable interest in developing a power monitor system for Generation IV reactors (for instance GT-MHR). A new type of semiconductor radiation detector is under development based on silicon carbide (SiC) technology for these reactors. SiC has been selected as the semiconductor material due to its superior thermal-electrical-neutronic properties. Compared to Si, SiC is a radiation hard material; however, like Si, the properties of SiC are changed by irradiation by a large fluence of energetic neutrons, as a consequence of displacement damage, and that irradiation decreases the life-time of detectors. Predictions of displacement damage and the concomitant radiation effects are important for deciding where the SiC detectors should be placed. The purpose of this dissertation is to develop computer simulation methods to estimate the number of various defects created in SiC detectors, because of neutron irradiation, and predict at what positions of a reactor, SiC detectors could monitor the neutron flux with high reliability. The simulation modeling includes several well-known---and commercial---codes (MCNP5, TRIM, MARLOWE and VASP), and two kinetic Monte Carlo codes written by the author (MCASIC and DCRSIC). My dissertation will highlight the displacement damage that may happen in SiC detectors located in available positions in the OSURR, GT-MHR and IRIS. As extra modeling output data, the count rates of SiC for the specified locations are calculated. A conclusion of this thesis is SiC detectors that are placed in the thermal neutron region of a graphite moderator-reflector reactor have a chance to survive at least one reactor refueling cycle, while their count rates are acceptably high.
NASA Astrophysics Data System (ADS)
Montag, Benjamin W.; Ugorowski, Philip B.; Nelson, Kyle A.; Edwards, Nathaniel S.; McGregor, Douglas S.
2016-11-01
Nowotny-Juza compounds continue to be explored as candidates for solid-state neutron detectors. Such a device would have greater efficiency, in a compact form, than present day gas-filled 3He and 10BF3 detectors. The 6Li(n,t)4He reaction yields a total Q-value of 4.78 MeV, larger than 10B, an energy easily identified above background radiations. Hence, devices fabricated from semiconductor compounds having either natural Li (nominally 7.5% 6Li) or enriched 6Li (usually 95% 6Li) as constituent atoms may provide a material for compact high efficiency neutron detectors. Starting material was synthesized by preparing equimolar portions of Li, Zn, and As sealed under vacuum (10-6 Torr) in quartz ampoules lined with boron nitride and subsequently reacted in a compounding furnace [1]. The raw synthesized material indicated the presence high impurity levels (material and electrical property characterizations). A static vacuum sublimation in quartz was performed to help purify the synthesized material [2,3]. Bulk crystalline samples were grown from the purified material [4,5]. Samples were cut using a diamond wire saw, and processed into devices. Bulk resistivity was determined from I-V curve measurements, ranging from 106-1011 Ω cm. Devices were characterized for sensitivity to 5.48 MeV alpha particles, 337 nm laser light, and neutron sensitivity in a thermal neutron diffracted beam at the Kansas State University TRIGA Mark II nuclear reactor. Thermal neutron reaction product charge induction was measured with a LiZnP device, and the reaction product spectral response was observed.
Neutron and gamma-ray energy reconstruction for characterization of special nuclear material
Clarke, Shaun D.; Hamel, Michael C.; Di fulvio, Angela; ...
2017-06-30
Characterization of special nuclear material may be performed using energy spectroscopy of either the neutron or gamma-ray emissions from the sample. Gamma-ray spectroscopy can be performed relatively easily using high-resolution semiconductors such as high-purity germanium. Neutron spectroscopy, by contrast, is a complex inverse problem. Here, results are presented for 252Cf and PuBe energy spectra unfolded using a single EJ309 organic scintillator; excellent agreement is observed with the reference spectra. Neutron energy spectroscopy is also possible using a two-plane detector array, whereby time-offlight kinematics can be used. With this system, energy spectra can also be obtained as a function of position.more » Finally, spatial-dependent energy spectra are presented for neutron and gamma-ray sources that are in excellent agreement with expectations.« less
Neutron and gamma-ray energy reconstruction for characterization of special nuclear material
DOE Office of Scientific and Technical Information (OSTI.GOV)
Clarke, Shaun D.; Hamel, Michael C.; Di fulvio, Angela
Characterization of special nuclear material may be performed using energy spectroscopy of either the neutron or gamma-ray emissions from the sample. Gamma-ray spectroscopy can be performed relatively easily using high-resolution semiconductors such as high-purity germanium. Neutron spectroscopy, by contrast, is a complex inverse problem. Here, results are presented for 252Cf and PuBe energy spectra unfolded using a single EJ309 organic scintillator; excellent agreement is observed with the reference spectra. Neutron energy spectroscopy is also possible using a two-plane detector array, whereby time-offlight kinematics can be used. With this system, energy spectra can also be obtained as a function of position.more » Finally, spatial-dependent energy spectra are presented for neutron and gamma-ray sources that are in excellent agreement with expectations.« less
Zhang, Cheng; Zang, Yaping; Zhang, Fengjiao; Diao, Ying; McNeill, Christopher R; Di, Chong-An; Zhu, Xiaozhang; Zhu, Daoben
2016-10-01
"Molecule-framework" and "side-chain" engineering is powerful for the design of high-performance organic semiconductors. Based on 2DQTTs, the relationship between molecular structure, film microstructure, and charge-transport property in organic thin-film transistors (OTFTs) is studied. 2DQTT-o-B exhibits outstanding electron mobilities of 5.2 cm 2 V -1 s -1 , which is a record for air-stable solution-processable n-channel small-molecule OTFTs to date. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Ground-based research of crystal growth of II-VI compound semiconductors by physical vapor transport
NASA Technical Reports Server (NTRS)
Volz, M. P.; Gillies, D. C.; Szofran, F. R.; Lehoczky, S. L.; Su, Ching-Hua; Sha, Yi-Gao; Zhou, W.; Dudley, M.; Liu, Hao-Chieh; Brebrick, R. F.;
1994-01-01
Ground-based investigation of the crystal growth of II-VI semiconductor compounds, including CdTe, CdS, ZnTe, and ZnSe, by physical vapor transport in closed ampoules was performed. The crystal growth experimental process and supporting activities--preparation and heat treatment of starting materials, vapor partial pressure measurements, and transport rate measurements are reported. The results of crystal characterization, including microscopy, microstructure, optical transmission photoluminescence, synchrotron radiation topography, and chemical analysis by spark source mass spectrography, are also discussed.
Microstructural studies of nanocrystalline α-alumina powder produced from Al13-cluster
NASA Astrophysics Data System (ADS)
Harun Al Rashid Megat Ahmad, Megat; Aziz Mohamed, Abdul; Ibrahim, Azmi; Seman Mahmood, Che; Giri Rachman Putra, Edy; Jamro, Rafhayudi; Kasim, Razali; Rawi Muhammad Zin, Muhammad
2007-12-01
Nanocrystalline alumina powder was produced from calcinations of Al13-oxalate precipitates at 1100 °C. A nearly normal distribution of agglomerated alumina powder was obtained with an average particle size of about 1 μm. XRD measurement confirmed that the alumina produced was of high purity and crystalline α-phase. Microstructural features of both the precipitates and alumina obtained were studied using the small angle neutron scattering (SANS) technique. SANS examinations show the formation of microstructures in the alumina powder of mass fractals type with dimension of ˜2.8 indicative of low intra-granular porosity.
NASA Astrophysics Data System (ADS)
Radulescu, Fabian
2000-12-01
Driven by the remarkable growth in the telecommunication market, the demand for more complex GaAs circuitry continued to increase in the last decade. As a result, the GaAs industry is faced with new challenges in its efforts to fabricate devices with smaller dimensions that would permit higher integration levels. One of the limiting factors is the ohmic contact metallurgy of the metal semiconductor field effect transistor (MESFET), which, during annealing, induces a high degree of lateral diffusion into the substrate. Because of its limited reaction with the substrate, the Pd-Ge contact seems to be the most promising candidate to be used in the next generation of MESFET's. The Pd-Ge system belongs to a new class of ohmic contacts to compound semiconductors, part of an alloying strategy developed only recently, which relies on solid phase epitaxy (SPE) and solid phase regrowth to "un-pin" the Fermi level at the surface of the compound semiconductor. However, implementing this alloy into an integrated process flow proved to be difficult due to our incomplete understanding of the microstructure evolution during annealing and its implications on the electrical properties of the contact. The microstructure evolution and the corresponding solid state reactions that take place during annealing of the Pd-Ge thin films on to GaAs were studied in connection with their effects on the electrical properties of the ohmic contact. The phase transformations sequence, transition temperatures and activation energies were determined by combining differential scanning calorimetry (DSC) for thermal analysis with transmission electron microscopy (TEM) for microstructure identification. In-situ TEM annealing experiments on the Pd/Ge/Pd/GaAs ohmic contact system have permitted real time determination of the evolution of contact microstructure. The kinetics of the solid state reactions, which occur during ohmic contact formation, were determined by measuring the grain growth rates associated with each phase from the videotape recordings. With the exception of the Pd-GaAs interactions, it was found that four phase transformations occur during annealing of the Pd:Ge thin films on top of GaAs. The microstructural information was correlated with specific ohmic contact resistivity measurements performed in accordance with the transmission line method (TLM) and these results demonstrated that the Ge SPE growth on top of GaAs renders the optimal electrical properties for the contact. By using the focused ion beam (FIB) method to produce microcantilever beams, the residual stress present in the thin film system was studied in connection with the microstructure. Although, the PdGe/epi-Ge/GaAs seemed to be the optimal microstructural configuration, the presence of PdGe at the interface with GaAs did not damage the contact resistivity significantly. These results made it difficult to establish a charge transport mechanism across the interface but they explained the wide processing window associated with this contact.
Microstructural evolution of neutron-irradiated Ni-Si and Ni-Al alloys
NASA Astrophysics Data System (ADS)
Takahashi, H.; Garner, F. A.
1992-10-01
Additions of silicon and aluminum suppress the neutron-induced swelling of pure nickel but to different degrees. Silicon is much more effective initially when compared to aluminum on a per atom basis but silicon exhibits a nonmonotonic influence on swelling with increasing concentration. Silicon tends to segregate toward grain boundaries while aluminum segregates away from these boundaries. Whereas the formation of the Ni 3Si phase is frequently observed in charged particle irradiation experiments conducted at much higher displacement rates, it did not occur during neutron irradiation in this study. Precipitation also did not occur in Ni-5Al during neutron irradiation, nor has it been reported to occur during ion irradiation.
Study of Light Neutron-Rich Nuclei Using a Multilayer Semiconductor Setup
NASA Astrophysics Data System (ADS)
Gurov, Yu. B.; Lapushkin, S. V.; Sandukovsky, V. G.; Chernyshev, B. A.
2017-12-01
The characteristics of two modifications of the semiconductor (s.c.d.) setup consisting of telescopes on the basis of silicon detectors are presented. These settings allow performing a precision measurement of energy in a large dynamic range (from a few to hundreds of MeV) and particle identification in a wide range of masses. The issues of measurement of the characteristics of s.c.d. telescopes and their impact on the quality of the obtained experimental data are considered. Considerable attention is paid to the use of created semiconductor devices for the search for and spectroscopy of light exotic nuclei on the accelerators of PNPI (Gatchina) and LANL (Los Alamos).
Evolution of Microstructure in a Nickel-based Superalloy as a Function of Ageing Time
DOE Office of Scientific and Technical Information (OSTI.GOV)
Chen, Wei-Ren; Smith, Gregory Scott; Porcar, L.
2011-01-01
An experimental investigation, combining synchrotron X-ray powder diffraction, small-angle neutron-scattering, and transmission electron microscopy, has been undertaken to study the microstructure of nanoprecipitates in a nickel-based superalloy. Upon increasing the ageing time during a heat-treatment process, the average size of the precipitates first decreases before changing to a monotonical growth stage. Possible reasons for this observed structural evolution, which is predicted thermodynamically, are suggested.
Monitoring of the Irradiated Neutron Fluence in the Neutron Transmutation Doping Process of Hanaro
NASA Astrophysics Data System (ADS)
Kim, Myong-Seop; Park, Sang-Jun
2009-08-01
Neutron transmutation doping (NTD) for silicon is a process of the creation of phosphorus impurities in intrinsic or extrinsic silicon by neutron irradiation to obtain silicon semiconductors with extremely uniform dopant distribution. HANARO has two vertical holes for the NTD, and the irradiation for 5 and 6 inch silicon ingots has been going on at one hole. In order to achieve the accurate neutron fluence corresponding to the target resistivity, the real time neutron flux is monitored by self-powered neutron detectors. After irradiation, the total irradiation fluence is confirmed by measuring the absolute activity of activation detectors. In this work, a neutron fluence monitoring method using zirconium foils with the mass of 10 ~ 50 mg was applied to the NTD process of HANARO. We determined the proportional constant of the relationship between the resistivity of the irradiated silicon and the neutron fluence determined by using zirconium foils. The determined constant for the initially n-type silicon was 3.126 × 1019 n·Ω/cm. It was confirmed that the difference between this empirical value and the theoretical one was only 0.5%. Conclusively, the practical methodology to perform the neutron transmutation doping of silicon was established.
Microstructural Evolution of Al2O3-ZrO2 (Y2O3) Composites and its Correlation with Toughness
NASA Astrophysics Data System (ADS)
Kim, Hee Seung; Seo, Mi Young; Kim, Ik Jin
2008-02-01
The microstructure of zirconia (ZrO2) toughened alumina (Al2O3) ceramics was carefully controlled so as to obtain dense and fine-grained ceramics, thereby improving the properties and reliability of the ceramics for capillary applications in semiconductor bonding technology. Al2O3-ZrO2(Y2O3) composite was produced via Ceramic Injection Molding (CIM) technology, followed by Sinter-HIP process. Room temperature strength, hardness, Young's modulus, thermal expansion coefficient and toughness were determined, as well as surface strengthening induced by the fine grained homogenous microstructure and the thermal treatment. The changes in alumina/zirconia grain size, sintering condition and HIP treatment were found to be correlated.
Microstructural evolution of NF709 (20Cr–25Ni–1.5MoNbTiN) under neutron irradiation
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kim, Byoungkoo; Tan, Lizhen; Xu, C.
In this study, because of its superior creep and corrosion resistance as compared with general austenitic stainless steels, NF709 has emerged as a candidate structural material for advanced nuclear reactors. To obtain fundamental information about the radiation resistance of this material, this study examined the microstructural evolution of NF709 subjected to neutron irradiation to 3 displacements per atom at 500 °C. Transmission electron microscopy, scanning electron microscopy, and high-energy x-ray diffraction were employed to characterize radiation-induced segregation, Frank loops, voids, as well as the formation and reduction of precipitates. Radiation hardening of ~76% was estimated by nanoindentation, approximately consistent withmore » the calculation according to the dispersed barrier-hardening model, suggesting Frank loops as the primary hardening source.« less
Microstructural evolution of NF709 (20Cr–25Ni–1.5MoNbTiN) under neutron irradiation
Kim, Byoungkoo; Tan, Lizhen; Xu, C.; ...
2015-12-30
In this study, because of its superior creep and corrosion resistance as compared with general austenitic stainless steels, NF709 has emerged as a candidate structural material for advanced nuclear reactors. To obtain fundamental information about the radiation resistance of this material, this study examined the microstructural evolution of NF709 subjected to neutron irradiation to 3 displacements per atom at 500 °C. Transmission electron microscopy, scanning electron microscopy, and high-energy x-ray diffraction were employed to characterize radiation-induced segregation, Frank loops, voids, as well as the formation and reduction of precipitates. Radiation hardening of ~76% was estimated by nanoindentation, approximately consistent withmore » the calculation according to the dispersed barrier-hardening model, suggesting Frank loops as the primary hardening source.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Dr. Mohit Jain; Dr. Ganesh Skandan; Dr. Gordon E. Khose
Generation IV Very High Temperature power generating nuclear reactors will operate at temperatures greater than 900 oC. At these temperatures, the components operating in these reactors need to be fabricated from materials with excellent thermo-mechanical properties. Conventional pure or composite materials have fallen short in delivering the desired performance. New materials, or conventional materials with new microstructures, and associated processing technologies are needed to meet these materials challenges. Using the concept of functionally graded materials, we have fabricated a composite material which has taken advantages of the mechanical and thermal properties of ceramic and metals. Functionally-graded composite samples with variousmore » microstructures were fabricated. It was demonstrated that the composition and spatial variation in the composition of the composite can be controlled. Some of the samples were tested for irradiation resistance to neutrons. The samples did not degrade during initial neutron irradiation testing.« less
NASA Astrophysics Data System (ADS)
Nicholson, D. E.; Padula, S. A.; Benafan, O.; Vaidyanathan, R.
2017-06-01
In situ neutron diffraction was used to provide insights into martensite variant microstructures during isothermal, isobaric, and isostrain loading in shape memory NiTi. The results show that variant microstructures were equivalent for the corresponding strain, and more importantly, the reversibility and equivalency were immediately evident in variant microstructures that were first formed isobarically but then reoriented to near random self-accommodated microstructures following isothermal deformation. Variant microstructures formed isothermally were not significantly affected by a subsequent thermal cycle under constant strain. In all loading cases considered, the resulting variant microstructure correlated with strain and did not correlate with stress. Based on the ability to select a variant microstructure for a given strain despite thermomechanical loading history, the results demonstrated here can be obtained by following any sequence of thermomechanical loading paths over multiple cycles. Thus, for training shape memory alloys (repeating thermomechanical cycling to obtain the desired variant microstructure), optimal paths can be selected so as to minimize the number of training cycles required, thereby increasing the overall stability and fatigue life of these alloys in actuator or medical applications.
Open circuit potential monitored digital photocorrosion of GaAs/AlGaAs quantum well microstructures
NASA Astrophysics Data System (ADS)
Aithal, Srivatsa; Dubowski, Jan J.
2018-04-01
Nanostructuring of semiconductor wafers with an atomic level depth resolution is a challenging task, primarily due to the limited availability of instruments for in situ monitoring of such processes. Conventional digital etching relies on calibration procedures and cumbersome diagnostics applied between or at the end of etching cycles. We have developed a photoluminescence (PL) based process for monitoring in situ digital photocorrosion (DPC) of GaAs/AlGaAs microstructures at rates below 0.2 nm per cycle. In this communication, we demonstrate that DPC of GaAs/AlGaAs microstructures could be monitored with open circuit potential (OCP) measured between the photocorroding surface of a microstructure and an Ag/AgCl reference electrode installed in the sample chamber. The excellent correlation between the position of both PL and OCP maxima indicates that the DPC process could be monitored in situ for materials that do not necessarily exhibit measurable PL emission.
Contribution of nanointerfaces to colossal permittivity of doped Ba(Ti,Sn)O3 ceramics
NASA Astrophysics Data System (ADS)
V'yunov, Oleg; Reshytko, Borys; Belous, Anatolii; Kovalenko, Leonid
2018-03-01
The microstructure, crystal chemical parameters and electrical-physical properties of samples of barium titanate-based dielectric and semiconductor ceramics were investigated in a wide frequency range. The contributions of different nanointerfaces to the permittivity of samples under investigation have been determined.
Inter-atomic force constants of BaF{sub 2} by diffuse neutron scattering measurement
DOE Office of Scientific and Technical Information (OSTI.GOV)
Sakuma, Takashi, E-mail: sakuma@mx.ibaraki.ac.jp; Makhsun,; Sakai, Ryutaro
2015-04-16
Diffuse neutron scattering measurement on BaF{sub 2} crystals was performed at 10 K and 295 K. Oscillatory form in the diffuse scattering intensity of BaF{sub 2} was observed at 295 K. The correlation effects among thermal displacements of F-F atoms were obtained from the analysis of oscillatory diffuse scattering intensity. The force constants among neighboring atoms in BaF{sub 2} were determined and compared to those in ionic crystals and semiconductors.
2014-09-18
each of the four 20-min dosimetry -focused irradiations, a TLD crystal was included in the dosimetry package placed next to the BJTs. This TLD was then...4.75× 103 rad(Si). One reason the measured TLD response would be higher than the calculated value may be due to neutron-induced electron excitation that...there were also 14 TLDs . The dosimetry packet 122 for the 23.4% irradiation did not contain TLDs because they would have become too radioactive and would
Neutron Transmutation Doped (NTD) germanium thermistors for sub-mm bolometer applications
NASA Technical Reports Server (NTRS)
Haller, E. E.; Itoh, K. M.; Beeman, J. W.
1996-01-01
Recent advances in the development of neutron transmutation doped (NTD) semiconductor thermistors fabricated from natural and controlled isotopic composition germanium are reported. The near ideal doping uniformity that can be achieved with the NTD process, the device simplicity of NTD Ge thermistors and the high performance of cooled junction field effect transistor preamplifiers led to the widespread acceptance of these thermal sensors in ground-based, airborne and spaceborne radio telescopes. These features made possible the development of efficient bolometer arrays.
Pillar-structured neutron detector based multiplicity system
Murphy, John W.; Shao, Qinghui; Voss, Lars F.; ...
2017-10-04
This work demonstrates the potential of silicon pillars filled with boron-10 as a sensor technology for a compact and portable neutron multiplicity system. Solid-state, semiconductor based neutron detectors may enable completely new detector form factors, offer an alternate approach to helium-3 based systems, and reduce detector weight and volume requirements. Thirty-two pillar-structured neutron detectors were assembled into a system with an active area of over 20 cm 2 and were used in this work to demonstrate the feasibility of this sensor technology as a potential replacement for helium-3 based gas detectors. Multiplicity measurements were successfully carried out using a californium-252more » neutron source, in which the source mass, system efficiency, and die-away time were determined. As a result, this demonstration shows that these solid-state detectors could allow for a more compact and portable system that could be used for special nuclear material identification in the field.« less
High-efficiency neutron detectors and methods of making same
McGregor, Douglas S.; Klann, Raymond
2007-01-16
Neutron detectors, advanced detector process techniques and advanced compound film designs have greatly increased neutron-detection efficiency. One embodiment of the detectors utilizes a semiconductor wafer with a matrix of spaced cavities filled with one or more types of neutron reactive material such as 10B or 6LiF. The cavities are etched into both the front and back surfaces of the device such that the cavities from one side surround the cavities from the other side. The cavities may be etched via holes or etched slots or trenches. In another embodiment, the cavities are different-sized and the smaller cavities extend into the wafer from the lower surfaces of the larger cavities. In a third embodiment, multiple layers of different neutron-responsive material are formed on one or more sides of the wafer. The new devices operate at room temperature, are compact, rugged, and reliable in design.
Pillar-structured neutron detector based multiplicity system
NASA Astrophysics Data System (ADS)
Murphy, John W.; Shao, Qinghui; Voss, Lars F.; Kerr, Phil L.; Fabris, Lorenzo; Conway, Adam M.; Nikolic, Rebecca J.
2018-01-01
This work demonstrates the potential of silicon pillars filled with boron-10 as a sensor technology for a compact and portable neutron multiplicity system. Solid-state, semiconductor based neutron detectors may enable completely new detector form factors, offer an alternate approach to helium-3 based systems, and reduce detector weight and volume requirements. Thirty-two pillar-structured neutron detectors were assembled into a system with an active area of over 20 cm2 and were used in this work to demonstrate the feasibility of this sensor technology as a potential replacement for helium-3 based gas detectors. Multiplicity measurements were successfully carried out using a californium-252 neutron source, in which the source mass, system efficiency, and die-away time were determined. This demonstration shows that these solid-state detectors could allow for a more compact and portable system that could be used for special nuclear material identification in the field.
Analytical functions to predict cosmic-ray neutron spectra in the atmosphere.
Sato, Tatsuhiko; Niita, Koji
2006-09-01
Estimation of cosmic-ray neutron spectra in the atmosphere has been an essential issue in the evaluation of the aircrew doses and the soft-error rates of semiconductor devices. We therefore performed Monte Carlo simulations for estimating neutron spectra using the PHITS code in adopting the nuclear data library JENDL-High-Energy file. Excellent agreements were observed between the calculated and measured spectra for a wide altitude range even at the ground level. Based on a comprehensive analysis of the simulation results, we propose analytical functions that can predict the cosmic-ray neutron spectra for any location in the atmosphere at altitudes below 20 km, considering the influences of local geometries such as ground and aircraft on the spectra. The accuracy of the analytical functions was well verified by various experimental data.
Power monitoring in space nuclear reactors using silicon carbide radiation detectors
NASA Technical Reports Server (NTRS)
Ruddy, Frank H.; Patel, Jagdish U.; Williams, John G.
2005-01-01
Space reactor power monitors based on silicon carbide (SiC) semiconductor neutron detectors are proposed. Detection of fast leakage neutrons using SiC detectors in ex-core locations could be used to determine reactor power: Neutron fluxes, gamma-ray dose rates and ambient temperatures have been calculated as a function of distance from the reactor core, and the feasibility of power monitoring with SiC detectors has been evaluated at several ex-core locations. Arrays of SiC diodes can be configured to provide the required count rates to monitor reactor power from startup to full power Due to their resistance to temperature and the effects of neutron and gamma-ray exposure, SiC detectors can be expected to provide power monitoring information for the fill mission of a space reactor.
NASA Astrophysics Data System (ADS)
King, Michael Joseph
Instrumentation development is essential to the advancement and success of homeland security systems. Active interrogation techniques that scan luggage and cargo containers for shielded special nuclear materials or explosives hold great potential in halting further terrorist attacks. The development of more economical, compact and efficient source and radiation detection devices will facilitate scanning of all containers and luggage while maintaining high-throughput and low-false alarms Innovative ion sources were developed for two novel, specialized neutron generating devices and initial generator tests were performed. In addition, a low-energy acceleration gamma generator was developed and its performance characterized. Finally, an organic semiconductor was investigated for direct fast neutron detection. A main part of the thesis work was the development of ion sources, crucial components of the neutron/gamma generator development. The use of an externally-driven radio-frequency antenna allows the ion source to generate high beam currents with high, mono-atomic species fractions while maintaining low operating pressures, advantageous parameters for neutron generators. A dual "S" shaped induction antenna was developed to satisfy the high current and large extraction area requirements of the high-intensity neutron generator. The dual antenna arrangement generated a suitable current density of 28 mA/cm2 at practical RF power levels. The stringent requirements of the Pulsed Fast Neutron Transmission Spectroscopy neutron generator necessitated the development of a specialized ten window ion source of toroidal shape with a narrow neutron production target at its center. An innovative ten antenna arrangement with parallel capacitors was developed for driving the multi-antenna arrangement and uniform coupling of RF power to all ten antennas was achieved. To address the desire for low-impact, low-radiation dose active interrogation systems, research was performed on mono-energetic gamma generators that operate at low-acceleration energies and leverage neutron generator technologies. The dissertation focused on the experimental characterization of the generator performance and involved MCNPX simulations to evaluate and analyze the experimental results. The emission of the 11.7 MeV gamma-rays was observed to be slightly anisotropic and the gamma yield was measured to be 2.0*105 gamma/s-mA. The lanthanum hexaboride target suffered beam damage from a high power density beam; however, this may be overcome by sweeping the beam across a larger target area. The efficient detection of fast neutrons is vital to active interrogation techniques for the detection of both SNM and explosives. Novel organic semiconductors are air-stable, low-cost materials that demonstrate direct electronic particle detection. As part of the development of a pi-conjugated organic polymer for fast neutron detection, charge generation and collection properties were investigated. By devising a dual, thin-film detector test arrangement, charge collection was measured for high energy protons traversing the dual detector arrangement that allowed the creation of variable track lengths by tilting the detector. The results demonstrated that an increase in track length resulted in a decreased signal collection. This can be understood by assuming charge carrier transport along the track instead of along the field lines, which was made possible by the filling of traps. However, this charge collection mechanism may be insufficient to generate a useful signal. This dissertation has explored the viability of a new generation of radiation sources and detectors, where the newly developed ion source technologies and prototype generators will further enhance the capabilities of existing threat detection systems and promote the development of cutting-edge detection technologies.
NASA Astrophysics Data System (ADS)
Fang, H.; van der Zwaag, S.; van Dijk, N. H.
2018-07-01
The magnetic configuration of a ferromagnetic system with mono-disperse and poly-disperse distribution of magnetic particles with inter-particle interactions has been computed. The analysis is general in nature and applies to all systems containing magnetically interacting particles in a non-magnetic matrix, but has been applied to steel microstructures, consisting of a paramagnetic austenite phase and a ferromagnetic ferrite phase, as formed during the austenite-to-ferrite phase transformation in low-alloyed steels. The characteristics of the computational microstructures are linked to the correlation function and determinant of depolarisation matrix, which can be experimentally obtained in three-dimensional neutron depolarisation (3DND). By tuning the parameters in the model used to generate the microstructure, we studied the effect of the (magnetic) particle size distribution on the 3DND parameters. It is found that the magnetic particle size derived from 3DND data matches the microstructural grain size over a wide range of volume fractions and grain size distributions. A relationship between the correlation function and the relative width of the particle size distribution was proposed to accurately account for the width of the size distribution. This evaluation shows that 3DND experiments can provide unique in situ information on the austenite-to-ferrite phase transformation in steels.
The Impact of Seed Layer Structure on the Recrystallization of ECD Cu and its Alloys
NASA Astrophysics Data System (ADS)
O'Brien, Brendan B.
Despite the significant improvements originally offered by the use of Cu over Al as the interconnect material for semiconductor devices, the continued down-scaling of interconnects has presented significant challenges for semiconductor engineers. As the metal line widths shrink, both the conductivity and reliability of lines decrease due to a stubbornly fine-grained microstructure in narrow lines. Understanding microstructural transformation of the ECD Cu in narrow features which leads to this polygranular microstructure is the first focus of this dissertation. As in the case of Cu films, the underlying seed layer strongly influences progress of transformation. Unlike films, however, the seed layer is not homogenous in patterned substrates, but differs according to the size of the trench and the location within the trench (field, bottom, and sidewall). Based on these findings, and the known influence of texture on the transformation of ECD Cu, a rapid trench initiated transformation process was posited for narrow interconnect lines. Time-resolved TEM observation of the ECD Cu in 48 nm lines during the transformation process confirmed the hypothesis. In fact, the TEM images revealed that the transformation was even faster than anticipated, and that the microstructure of the Cu inside the lines was stagnant after a mere 1.5 hours at room temperature. Studies of the transformation at elevated temperatures found that, despite anneals at 250°C for up to an hour, the grain size distribution for the Cu in narrow lines for all times converged, whether annealed at room temperature or 250°C. These data suggest that process was being driven by the 'consumable' internal energy stored in the as-plated microstructure. This is different than the transformation of the overburden, which is driven by a competition between surface energy and internal stress buildup due to film densification and relief due to the secondary growth of a 200 texture component. Based on these findings, two methods for manipulating the microstructure of the ECD Cu in the narrow lines were explored, including changes to the seed layer through ion implantation, and altering the as-plated Cu microstructure through co-ECD of alloys. The influence on the microstructure and applicability of both of these techniques to BEOL processing will also be discussed.
NASA Astrophysics Data System (ADS)
Parida, M. K.; Prabakar, K.; Sundari, S. T.
2018-03-01
In the present work, Monte Carlo simulations using GEANT4 are carried out to estimate the efficiency of semiconductor neutron detectors with depleted UO2 (DUO2) as converter material, in both planar (direct and indirect) and 3D geometry (cylindrical perforation and trenches structure) configurations. The simulations were conducted for neutrons of variable energy viz., thermal (25 meV) and fast (1 to 10 MeV) that were incident on varying thicknesses (0.25 μm to 1000 μm), diameters (1 μm to 9 μm) and widths (1 μm to 9 μm) along with depths (50 μm to 275 μm) of DUO2 for planar, cylindrical perforated and trench structures, respectively. In the case of direct planar detectors, efficiency was found to increase with the thickness of DUO2 and the rate at which efficiency increased was found to follow the macroscopic fission cross section at the corresponding neutron energy. In the case of indirect planar detector, efficiency was lower as compared to direct configuration and was found to saturate beyond a thickness of ~3 μm. This saturation is explained on the basis of mean free path of neutrons in the DUO2 material. For the 3D perforated silicon detectors of cylindrical (trench) geometry, backfilled with DUO2, the efficiency for detection of thermal neutrons ~25 meV and fast neutrons ~ typical energy of 10 MeV was found to be ~0.0159% (~0.0177%) and ~0.0088% (0.0098%), respectively. These efficiency values were two (one) order values higher than planar indirect detector for thermal (fast) neutrons. Histogram plots were also obtained from the GEANT4 simulations to monitor the energy distribution of fission products in planar (direct and indirect) and 3D geometry (cylindrical and trench) configurations. These plots revealed that, for all the detector configurations, the energy deposited by the fission products are higher as compared to the typical gamma ray background. Thus, for detectors with DUO2 as converter material, higher values of low level discriminator (LLD) can be set, so as to achieve good background discrimination.
Microradiography with Semiconductor Pixel Detectors
DOE Office of Scientific and Technical Information (OSTI.GOV)
Jakubek, Jan; Cejnarova, Andrea; Dammer, Jiri
High resolution radiography (with X-rays, neutrons, heavy charged particles, ...) often exploited also in tomographic mode to provide 3D images stands as a powerful imaging technique for instant and nondestructive visualization of fine internal structure of objects. Novel types of semiconductor single particle counting pixel detectors offer many advantages for radiation imaging: high detection efficiency, energy discrimination or direct energy measurement, noiseless digital integration (counting), high frame rate and virtually unlimited dynamic range. This article shows the application and potential of pixel detectors (such as Medipix2 or TimePix) in different fields of radiation imaging.
Neutron irradiation effects in Fe and Fe-Cr at 300 °C
DOE Office of Scientific and Technical Information (OSTI.GOV)
Chen, Wei-Ying; Miao, Yinbin; Gan, Jian
2016-06-01
Fe and Fe-Cr (Cr = 10–16 at.%) specimens were neutron-irradiated at 300 °C to 0.01, 0.1 and 1 dpa. The TEM observations indicated that the Cr significantly reduced the mobility of dislocation loops and suppressed vacancy clustering, leading to distinct damage microstructures between Fe and Fe-Cr. Irradiation-induced dislocation loops in Fe were heterogeneously observed in the vicinity of grown-in dislocations, whereas the loop distribution observed in Fe-Cr is much more uniform. Voids were observed in the irradiated Fe samples, but not in irradiated Fe-Cr samples. Increasing Cr content in Fe-Cr results in a higher density, and a smaller size ofmore » irradiation-induced dislocation loops. Orowan mechanism was used to correlate the observed microstructure and hardening, which showed that the hardening in Fe-Cr can be attributed to the formation of dislocation loops and α' precipitates.« less
Investigation on demagnetization of Nd2Fe14B permanent magnets induced by irradiation
NASA Astrophysics Data System (ADS)
Li, Zhefu; Jia, Yanyan; Liu, Renduo; Xu, Yuhai; Wang, Guanghong; Xia, Xiaobin
2017-12-01
Nd2Fe14B is an important component of insertion devices, which are used in synchrotron radiation sources, and could be demagnetized by irradiation. In the present study, the Monte Carlo code FLUKA was used to analyze the irradiation field of Nd2Fe14B, and it was confirmed that the main demagnetization particle was neutron. Nd2Fe14B permanent magnet samples were irradiated by Ar ions at different doses to simulate neutron irradiation damage. The hysteresis loops were measured using a vibrating sample magnetometer, and the microstructure evolutions were characterized by transmission electron microscopy. Moreover, the relationship between them was discussed. The results indicate that the decrease in saturated magnetization is caused by the changes in microstructure. The evolution of single crystals into an amorphous structure is the reason for the demagnetization phenomenon of Nd2Fe14B permanent magnets when considering its microscopic structure.
Multi-scale Modeling of Radiation Damage: Large Scale Data Analysis
NASA Astrophysics Data System (ADS)
Warrier, M.; Bhardwaj, U.; Bukkuru, S.
2016-10-01
Modification of materials in nuclear reactors due to neutron irradiation is a multiscale problem. These neutrons pass through materials creating several energetic primary knock-on atoms (PKA) which cause localized collision cascades creating damage tracks, defects (interstitials and vacancies) and defect clusters depending on the energy of the PKA. These defects diffuse and recombine throughout the whole duration of operation of the reactor, thereby changing the micro-structure of the material and its properties. It is therefore desirable to develop predictive computational tools to simulate the micro-structural changes of irradiated materials. In this paper we describe how statistical averages of the collision cascades from thousands of MD simulations are used to provide inputs to Kinetic Monte Carlo (KMC) simulations which can handle larger sizes, more defects and longer time durations. Use of unsupervised learning and graph optimization in handling and analyzing large scale MD data will be highlighted.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kim, Jeoung Han; Byun, Thak Sang; Shin, Eunjoo
2015-08-17
Three oxide dispersion-strengthened (ODS) steels are produced in order to investigate the effect of the mechanical alloying (MA) temperature on the microstructural evolution and high temperature mechanical properties. The microstructural evolution with different MA conditions is examined using small angle neutron scattering. As the MA temperature decreases, the density of the nanoclusters below 10 nm increases and their mean diameter decreases. A low temperature during MA leads to a high strength in the compression tests performed at 500 *C; however, this effect disappears in testing at 900 *C. The milling process at *70 *C exhibits excellent high fracture toughness, whichmore » is better than the benchmark material 14YWT-SM10. However, the *150 *C milling process results in significantly worse fracture toughness properties. The reasons for this strong temperature dependency are discussed.« less
Chialvo, Ariel A.; Vlcek, Lukas
2015-05-22
We confront the microstructural analysis of aqueous electrolytes and present a detailed account of the fundamentals underlying the neutron scattering with isotopic substitution (NDIS) approach for the experimental determination of ion coordination numbers in systems involving both halides anions and oxyanions. We place particular emphasis on the frequently overlooked ion-pairing phenomenon, identify its microstructural signature in the neutron-weighted distribution functions, and suggest novel techniques to deal with either the estimation of the ion-pairing magnitude or the correction of its effects on the experimentally measured coordination numbers. We illustrate the underlying ideas by applying these new developments to the interpretation ofmore » four NDIS test-cases via molecular simulation, as convenient dry runs for the actual scattering experiments, for representative aqueous electrolyte solutions at ambient conditions involving metal halides and nitrates.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Perez-Bergquist, Alex G.; Nozawa, Takashi; Shih, Chunghao Phillip
Over the past decade, significant progress has been made in the development of silicon carbide (SiC) composites, composed of near-stoichiometric SiC fibers embedded in a crystalline SiC matrix, to the point that such materials can now be considered nuclear grade. Recent neutron irradiation studies of Hi-Nicalon Type S SiC composites showed excellent radiation response at damage levels of 30-40 dpa at temperatures of 300-800 °C. However, more recent studies of these same fiber composites irradiated to damage levels of >70 dpa at similar temperatures showed a marked decrease in ultimate flexural strength, particularly at 300 °C. Here, electron microscopy ismore » used to analyze the microstructural evolution of these irradiated composites in order to investigate the cause of the degradation. While minimal changes were observed in Hi-Nicalon Type S SiC composites irradiated at 800 °C, substantial microstructural evolution is observed in those irradiated at 300° C. Furthermore, carbonaceous particles in the fibers grew by 25% compared to the virgin case, and severe cracking occurred at interphase layers.« less
Large area ultraviolet photodetector on surface modified Si:GaN layers
NASA Astrophysics Data System (ADS)
Anitha, R.; R., Ramesh; Loganathan, R.; Vavilapalli, Durga Sankar; Baskar, K.; Singh, Shubra
2018-03-01
Unique features of semiconductor based heterostructured photoelectric devices have drawn considerable attention in the recent past. In the present work, large area UV photodetector has been fabricated utilizing interesting Zinc oxide microstructures on etched Si:GaN layers. The surface of Si:GaN layer grown by metal organic chemical vapor deposition method on sapphire has been modified by chemical etching to control the microstructure. The photodetector exhibits response to Ultraviolet light only. Optimum etching of Si:GaN was required to exhibit higher responsivity (0.96 A/W) and detectivity (∼4.87 × 109 Jones), the two important parameters for a photodetector. Present method offers a tunable functionality of photodetector through modification of top layer microstructure. A comparison with state of art materials has also been presented.
Silva, Chinthaka M.; Leonard, Keith J.; Van Abel, Eric; ...
2017-12-09
Here two types of Zircaloy-4 (alpha-annealed and beta-quenched) were investigated in their different forms. It was found that mechanical properties of Zircaloy-4 are affected significantly by welding and hydrogen-charging followed by neutron irradiation. Evaluation of microstructural properties of samples showed that these changes are mainly due to the formation of secondary phases such as hydrides—mostly along grain boundaries, dislocation channeling and their disruptions, and the increase in the type dislocation loops.
NASA Astrophysics Data System (ADS)
Silva, Chinthaka M.; Leonard, Keith J.; Van Abel, Eric; Geringer, J. Wilna; Bryan, Chris D.
2018-02-01
Two types of Zircaloy-4 (alpha-annealed and beta-quenched) were investigated in their different forms. It was found that mechanical properties of Zircaloy-4 are affected significantly by welding and hydrogen-charging followed by neutron irradiation. Evaluation of microstructural properties of samples showed that these changes are mainly due to the formation of secondary phases such as hydrides-mostly along grain boundaries, dislocation channeling and their disruptions, and the increase in the type dislocation loops.
Non-invasive characterisation of SIX Japanese hand-guards (tsuba)
NASA Astrophysics Data System (ADS)
Barzagli, Elisa; Grazzi, Francesco; Civita, Francesco; Scherillo, Antonella; Pietropaolo, Antonino; Festa, Giulia; Zoppi, Marco
2013-12-01
In this work we present a systematic study of Japanese sword hand-guards ( tsuba) carried out by means of non-invasive techniques using neutrons. Several tsuba from different periods, belonging to the Japanese Section of the Stibbert Museum, were analysed using an innovative approach to characterise the bulk of the samples, coupling two neutron techniques, namely Time of Flight Neutron Diffraction (ToF-ND) and Nuclear Resonance Capture Analysis (NRCA). The measurements were carried out on the same instrument: the INES beam-line at the ISIS spallation pulsed neutron source (UK). NRCA analysis allows identifying the elements present in the sample gauge volume, while neutron diffraction is exploited to quantify the phase distribution and other micro-structural parameters of the metal specimen. The results show that all samples are made of high-quality metal, either steel or copper alloy, with noticeable changes in composition and working techniques, depending on the place and time of manufacturing.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Fedotov, V. K., E-mail: fedotov@issp.ac.ru; Ponyatovsky, E. G.
2011-12-15
The spontaneous amorphization of high-pressure quenched phases of the GaSb-Ge system has been studied by neutron diffraction while slowly heating the phases at atmospheric pressure. The sequence of changes in the structural parameters of the initial crystalline phase and the final amorphous phase is established. The behavior of the phases and the correlation in the structural features of the phase transitions and anomalous thermal effects exhibit signs of the inhomogeneous model of solid-state amorphization.
Ultrafast Physics in Semiconductor Microstructures.
1988-02-19
1588(1983). (27) Y. Silberger . P. W. Smith, D. JI Eienberger, D. A. B. Miller, A. C. Gossard, and W. Wiegmann. Opt. Lett. 9, 507(1984). S(28) B...and G. R. Fowles, in High Pressure Physic, and Chemistry , and Air Force Office of Scientific Research No. 86-003 1. edited by R. S. Bradley (Academic
2D coherent charge transport in highly ordered conducting polymers doped by solid state diffusion
NASA Astrophysics Data System (ADS)
Kang, Keehoon; Watanabe, Shun; Broch, Katharina; Sepe, Alessandro; Brown, Adam; Nasrallah, Iyad; Nikolka, Mark; Fei, Zhuping; Heeney, Martin; Matsumoto, Daisuke; Marumoto, Kazuhiro; Tanaka, Hisaaki; Kuroda, Shin-Ichi; Sirringhaus, Henning
2016-08-01
Doping is one of the most important methods to control charge carrier concentration in semiconductors. Ideally, the introduction of dopants should not perturb the ordered microstructure of the semiconducting host. In some systems, such as modulation-doped inorganic semiconductors or molecular charge transfer crystals, this can be achieved by spatially separating the dopants from the charge transport pathways. However, in conducting polymers, dopants tend to be randomly distributed within the conjugated polymer, and as a result the transport properties are strongly affected by the resulting structural and electronic disorder. Here, we show that in the highly ordered lamellar microstructure of a regioregular thiophene-based conjugated polymer, a small-molecule p-type dopant can be incorporated by solid state diffusion into the layers of solubilizing side chains without disrupting the conjugated layers. In contrast to more disordered systems, this allows us to observe coherent, free-electron-like charge transport properties, including a nearly ideal Hall effect in a wide temperature range, a positive magnetoconductance due to weak localization and the Pauli paramagnetic spin susceptibility.
Neutron Detection Using Gadolinium-Based Diodes
2011-03-01
electronic device in use today [10]. A semiconductor material that has an excess of acceptor dopants , typically from column III of the periodic table...strontium-90 or cobalt -57 [3]. The results from the CASINO modeling effort indicate that a very small percentage of the IC electrons would fully
Viani, Alberto; Sotiriadis, Konstantinos; Kumpová, Ivana; Mancini, Lucia; Appavou, Marie-Sousai
2017-04-01
To characterize the microstructure of two zinc phosphate cement formulations in order to investigate the role of liquid/solid ratio and composition of powder component, on the developed porosity and, consequently, on compressive strength. X-ray powder diffraction with the Rietveld method was used to study the phase composition of zinc oxide powder and cements. Powder component and cement microstructure were investigated with scanning electron microscopy. Small angle neutron scattering (SANS) and microfocus X-ray computed tomography (XmCT) were together employed to characterize porosity and microstructure of dental cements. Compressive strength tests were performed to evaluate their mechanical performance. The beneficial effects obtained by the addition of Al, Mg and B to modulate powder reactivity were mitigated by the crystallization of a Zn aluminate phase not involved in the cement setting reaction. Both cements showed spherical pores with a bimodal distribution at the micro/nano-scale. Pores, containing a low density gel-like phase, developed through segregation of liquid during setting. Increasing liquid/solid ratio from 0.378 to 0.571, increased both SANS and XmCT-derived specific surface area (by 56% and 22%, respectively), porosity (XmCT-derived porosity increased from 3.8% to 5.2%), the relative fraction of large pores ≥50μm, decreased compressive strength from 50±3MPa to 39±3MPa, and favored microstructural and compositional inhomogeneities. Explain aspects of powder design affecting the setting reaction and, in turn, cement performance, to help in optimizing cement formulation. The mechanism behind development of porosity and specific surface area explains mechanical performance, and processes such as erosion and fluoride release/uptake. Copyright © 2017 The Authors. Published by Elsevier Ltd.. All rights reserved.
NASA Technical Reports Server (NTRS)
Gandin, Charles-Andre; Ratke, Lorenz
2008-01-01
The Materials Science Laboratory - Columnar-to-Equiaxed Transition in Solidification Processing and Microstructure Formation in Casting of Technical Alloys under Diffusive and Magnetically Controlled Convective Conditions (MSL-CETSOL and MICAST) are two investigations which supports research into metallurgical solidification, semiconductor crystal growth (Bridgman and zone melting), and measurement of thermo-physical properties of materials. This is a cooperative investigation with the European Space Agency (ESA) and National Aeronautics and Space Administration (NASA) for accommodation and operation aboard the International Space Station (ISS). Research Summary: Materials Science Laboratory - Columnar-to-Equiaxed Transition in Solidification Processing (CETSOL) and Microstructure Formation in Casting of Technical Alloys under Diffusive and Magnetically Controlled Convective Conditions (MICAST) are two complementary investigations which will examine different growth patterns and evolution of microstructures during crystallization of metallic alloys in microgravity. The aim of these experiments is to deepen the quantitative understanding of the physical principles that govern solidification processes in cast alloys by directional solidification.
Handheld dual thermal neutron detector and gamma-ray spectrometer
DOE Office of Scientific and Technical Information (OSTI.GOV)
Stowe, Ashley C.; Burger, Arnold; Bhattacharya, Pijush
2017-05-02
A combined thermal neutron detector and gamma-ray spectrometer system, including: a first detection medium including a lithium chalcopyrite crystal operable for detecting neutrons; a gamma ray shielding material disposed adjacent to the first detection medium; a second detection medium including one of a doped metal halide, an elpasolite, and a high Z semiconductor scintillator crystal operable for detecting gamma rays; a neutron shielding material disposed adjacent to the second detection medium; and a photodetector coupled to the second detection medium also operable for detecting the gamma rays; wherein the first detection medium and the second detection medium do not overlapmore » in an orthogonal plane to a radiation flux. Optionally, the first detection medium includes a .sup.6LiInSe.sub.2 crystal. Optionally, the second detection medium includes a SrI.sub.2(Eu) scintillation crystal.« less
NASA Astrophysics Data System (ADS)
Long, Fei
Zirconium alloys have been widely used in the CANDU (CANada Deuterium Uranium) reactor as core structural materials. Alloy such as Zircaloy-2 has been used for calandria tubes; fuel cladding; the pressure tube is manufactured from alloy Zr-2.5Nb. During in-reactor service, these alloys are exposed to a high flux of fast neutron at elevated temperatures. It is important to understand the effect of temperature and irradiation on the deformation mechanism of zirconium alloys. Aiming to provide experimental guidance for future modeling predictions on the properties of zirconium alloys this thesis describes the result of an investigation of the change of slip and twinning modes in Zircaloy-2 and Zr-2.5Nb as a function of temperature and irradiation. The aim is to provide scientific fundamentals and experimental evidences for future industry modeling in processing technique design, and in-reactor property change prediction of zirconium components. In situ neutron diffraction mechanical tests carried out on alloy Zircaloy-2 at three temperatures: 100¢ªC, 300¢ªC, and 500¢ªC, and described in Chapter 3. The evolution of the lattice strain of individual grain families in the loading and Poisson's directions during deformation, which probes the operation of slip and twinning modes at different stress levels, are described. By using the same type of in situ neutron diffraction technique, tests on Zr-2.5Nb pressure tube material samples, in either the fast-neutron irradiated or un-irradiated condition, are reported in Chapter 4. In Chapter 5, the measurement of dislocation density by means of line profile analysis of neutron diffraction patterns, as well as TEM observations of the dislocation microstructural evolution, is described. In Chapter 6 a hot-rolled Zr-2.5Nb with a larger grain size compared with the pressure tubing was used to study the development of dislocation microstructures with increasing plastic strain. In Chapter 7, in situ loading of heavy ion irradiated hot-rolled Zr-2.5Nb alloy is described, providing evidence for the interaction between moving dislocations and irradiation induced loops. Chapter 8 gives the effect on the dislocation structure of different levels of compressive strains along two directions in the hot-rolled Zr-2.5Nb alloy. By using high resolution neutron diffraction and TEM observations, the evolution of type and dislocation densities, as well as changes of dislocation microstructure with plastic strain were characterized.
Li, Zongbin; Yang, Bo; Zou, Naifu; Zhang, Yudong; Esling, Claude; Gan, Weimin; Zhao, Xiang; Zuo, Liang
2017-04-27
Heusler type Ni-Mn-Ga ferromagnetic shape memory alloys can demonstrate excellent magnetic shape memory effect in single crystals. However, such effect in polycrystalline alloys is greatly weakened due to the random distribution of crystallographic orientation. Microstructure optimization and texture control are of great significance and challenge to improve the functional behaviors of polycrystalline alloys. In this paper, we summarize our recent progress on the microstructure control in polycrystalline Ni-Mn-Ga alloys in the form of bulk alloys, melt-spun ribbons and thin films, based on the detailed crystallographic characterizations through neutron diffraction, X-ray diffraction and electron backscatter diffraction. The presented results are expected to offer some guidelines for the microstructure modification and functional performance control of ferromagnetic shape memory alloys.
Micro-opto-mechanical devices and systems using epitaxial lift off
NASA Technical Reports Server (NTRS)
Camperi-Ginestet, C.; Kim, Young W.; Wilkinson, S.; Allen, M.; Jokerst, N. M.
1993-01-01
The integration of high quality, single crystal thin film gallium arsenide (GaAs) and indium phosphide (InP) based photonic and electronic materials and devices with host microstructures fabricated from materials such as silicon (Si), glass, and polymers will enable the fabrication of the next generation of micro-opto-mechanical systems (MOMS) and optoelectronic integrated circuits. Thin film semiconductor devices deposited onto arbitrary host substrates and structures create hybrid (more than one material) near-monolithic integrated systems which can be interconnected electrically using standard inexpensive microfabrication techniques such as vacuum metallization and photolithography. These integrated systems take advantage of the optical and electronic properties of compound semiconductor devices while still using host substrate materials such as silicon, polysilicon, glass and polymers in the microstructures. This type of materials optimization for specific tasks creates higher performance systems than those systems which must use trade-offs in device performance to integrate all of the function in a single material system. The low weight of these thin film devices also makes them attractive for integration with micromechanical devices which may have difficulty supporting and translating the full weight of a standard device. These thin film devices and integrated systems will be attractive for applications, however, only when the development of low cost, high yield fabrication and integration techniques makes their use economically feasible. In this paper, we discuss methods for alignment, selective deposition, and interconnection of thin film epitaxial GaAs and InP based devices onto host substrates and host microstructures.
Oxidizing annealing effects on VO2 films with different microstructures
NASA Astrophysics Data System (ADS)
Dou, Yan-Kun; Li, Jing-Bo; Cao, Mao-Sheng; Su, De-Zhi; Rehman, Fida; Zhang, Jia-Song; Jin, Hai-Bo
2015-08-01
Vanadium dioxide (VO2) films have been prepared by direct-current magnetron sputter deposition on m-, a-, and r-plane sapphire substrates. The obtained VO2 films display different microstructures depending on the orientation of sapphire substrates, i.e. mixed microstructure of striped grains and equiaxed grains on m-sapphire, big equiaxed grains on a-sapphire and fine-grained microstructure on r-sapphire. The VO2 films were treated by the processes of oxidation in air. The electric resistance and infrared transmittance of the oxidized films were characterized to examine performance characteristics of VO2 films with different microstructures in oxidation environment. The oxidized VO2 films on m-sapphire exhibit better electrical performance than the other two films. After air oxidization for 600 s at 450 °C, the VO2 films on m-sapphire show a resistance change of 4 orders of magnitude over the semiconductor-to-metal transition. The oxidized VO2 films on a-sapphire have the highest optical modulation efficiency in infrared region compared to other samples. The different performance characteristics of VO2 films are understood in terms of microstructures, i.e. grain size, grain shape, and oxygen vacancies. The findings reveal the correlation of microstructures and performances of VO2 films, and provide useful knowledge for the design of VO2 materials to different applications.
NASA Technical Reports Server (NTRS)
Wagner, L. J.
1977-01-01
The volume includes papers on semiconductor radiation detectors of various types, components of radiation detection and dosimetric systems, digital and microprocessor equipment in nuclear industry and science, and a wide variety of applications of nuclear radiation detectors. Semiconductor detectors of X-rays, gamma radiation, heavy ions, neutrons, and other nuclear particles, plastic scintillator arrays, drift chambers, spark wire chambers, and radiation dosimeter systems are reported on. Digital and analog conversion systems, digital data and control systems, microprocessors, and their uses in scientific research and nuclear power plants are discussed. Large-area imaging and biomedical nucleonic instrumentation, nuclear power plant safeguards, reactor instrumentation, nuclear power plant instrumentation, space instrumentation, and environmental instrumentation are dealt with. Individual items are announced in this issue.
On α‧ precipitate composition in thermally annealed and neutron-irradiated Fe- 9-18Cr alloys
NASA Astrophysics Data System (ADS)
Reese, Elaina R.; Bachhav, Mukesh; Wells, Peter; Yamamoto, Takuya; Robert Odette, G.; Marquis, Emmanuelle A.
2018-03-01
Ferritic-martensitic steels are leading candidates for many nuclear energy applications. However, formation of nanoscale α‧ precipitates during thermal aging at temperatures above 450 °C, or during neutron irradiation at lower temperatures, makes these Fe-Cr steels susceptible to embrittlement. To complement the existing literature, a series of Fe-9 to 18 Cr alloys were neutron-irradiated at temperatures between 320 and 455 °C up to doses of 20 dpa. In addition, post-irradiation annealing treatments at 500 and 600 °C were performed on a neutron-irradiated Fe-18 Cr alloy to validate the α-α‧ phase boundary. The microstructures were characterized using atom probe tomography and the results were analyzed in light of the existing literature. Under neutron irradiation and thermal annealing, the measured α‧ concentrations ranged from ∼81 to 96 at.% Cr, as influenced by temperature, precipitate size, technique artifacts, and, possibly, cascade ballistic mixing.
NASA Technical Reports Server (NTRS)
Martini, M.
1981-01-01
Advances in instrumentation for use in nuclear-science studies are described. Consideration is given to medical instrumentation, computerized fluoroscopy, environmental instrumentation, data acquisition techniques, semiconductor detectors, microchannel plates and photomultiplier tubes, reactor instrumentation, neutron detectors and proportional counters, and space instrumentation.
NASA Astrophysics Data System (ADS)
Stowe, Ashley C.; Morrell, J.; Battacharya, Pijush; Tupitsyn, Eugene; Burger, Arnold
2011-09-01
Lithium containing AIBIIICVI semiconductors are being considered as alternative materials for room temperature neutron detection. One of the primary challenges in growing a high quality crystal of such a material is the reactivity of lithium metal. The presence of nitrides, oxides, and a variety of alkali and alkaline earth metal impurities prevent pure synthesis and truncate crystal growth by introducing multiple nucleation centers during growth. Multiple lithium metal purification methods have been investigated which ultimately raised the metal purity to 99.996%. Multi-cycle vacuum distillation removed all but 40 ppm of metal impurities in lithium metal. LiGa(Se/Te)2 was then synthesized with the high purity lithium metal by a variety of conditions. Lithium metal reacts violently with many standard crucible materials, and thermodynamic studies were undertaken to insure that an appropriate crucible choice was made, with high purity iron and boron nitride crucibles being the least reactive practical materials. Once conditions were optimized for synthesis of the chalcopyrite, vertical Bridgman crystal growth resulted in red crystals. The optical, electronic, and thermodynamic properties were collected.
Use of GaN as a Scintillating Ionizing Radiation Detector
NASA Astrophysics Data System (ADS)
Wensman, Johnathan; Guardala, Noel; Mathur, Veerendra; Alasagas, Leslie; Vanhoy, Jeffrey; Statham, John; Marron, Daniel; Millett, Marshall; Marsh, Jarrod; Currie, John; Price, Jack
2017-09-01
Gallium nitride (GaN) is a III/V direct bandgap semiconductor which has been used in light emitting diodes (LEDs) since the 1990s. Currently, due to a potential for increased efficiency, GaN is being investigated as a replacement for silicon in power electronics finding potential uses ranging from data centers to electric vehicles. In addition to LEDs and power electronics though, doped GaN can be used as a gamma insensitive fast neutron detector due to the direct band-gap, light propagation properties, and response to ionizing radiations. Investigation of GaN as a semiconductor scintillator for use in a radiation detection system involves mapping the response function of the detector crystal over a range of photon and neutron energies, and measurements of light generation in the GaN crystal due to proton, alpha, and nitrogen projectiles. In this presentation we discuss the measurements made to date, and plausible interpretations of the response functions. This work funded in part by the Naval Surface Warfare Center, Carderock Division In-house Laboratory Independent Research program.
The physics of solid-state neutron detector materials and geometries.
Caruso, A N
2010-11-10
Detection of neutrons, at high total efficiency, with greater resolution in kinetic energy, time and/or real-space position, is fundamental to the advance of subfields within nuclear medicine, high-energy physics, non-proliferation of special nuclear materials, astrophysics, structural biology and chemistry, magnetism and nuclear energy. Clever indirect-conversion geometries, interaction/transport calculations and modern processing methods for silicon and gallium arsenide allow for the realization of moderate- to high-efficiency neutron detectors as a result of low defect concentrations, tuned reaction product ranges, enhanced effective omnidirectional cross sections and reduced electron-hole pair recombination from more physically abrupt and electronically engineered interfaces. Conversely, semiconductors with high neutron cross sections and unique transduction mechanisms capable of achieving very high total efficiency are gaining greater recognition despite the relative immaturity of their growth, lithographic processing and electronic structure understanding. This review focuses on advances and challenges in charged-particle-based device geometries, materials and associated mechanisms for direct and indirect transduction of thermal to fast neutrons within the context of application. Calorimetry- and radioluminescence-based intermediate processes in the solid state are not included.
A Thermal and Electrical Analysis of Power Semiconductor Devices
NASA Technical Reports Server (NTRS)
Vafai, Kambiz
1997-01-01
The state-of-art power semiconductor devices require a thorough understanding of the thermal behavior for these devices. Traditional thermal analysis have (1) failed to account for the thermo-electrical interaction which is significant for power semiconductor devices operating at high temperature, and (2) failed to account for the thermal interactions among all the levels involved in, from the entire device to the gate micro-structure. Furthermore there is a lack of quantitative studies of the thermal breakdown phenomenon which is one of the major failure mechanisms for power electronics. This research work is directed towards addressing. Using a coupled thermal and electrical simulation, in which the drift-diffusion equations for the semiconductor and the energy equation for temperature are solved simultaneously, the thermo-electrical interactions at the micron scale of various junction structures are thoroughly investigated. The optimization of gate structure designs and doping designs is then addressed. An iterative numerical procedure which incorporates the thermal analysis at the device, chip and junction levels of the power device is proposed for the first time and utilized in a BJT power semiconductor device. In this procedure, interactions of different levels are fully considered. The thermal stability issue is studied both analytically and numerically in this research work in order to understand the mechanism for thermal breakdown.
Exploring synchrotron radiation capabilities: The ALS-Intel CRADA
DOE Office of Scientific and Technical Information (OSTI.GOV)
Gozzo, F.; Cossy-Favre, A; Trippleet, B.
1997-04-01
Synchrotron radiation spectroscopy and spectromicroscopy were applied, at the Advanced Light Source, to the analysis of materials and problems of interest to the commercial semiconductor industry. The authors discuss some of the results obtained at the ALS using existing capabilities, in particular the small spot ultra-ESCA instrument on beamline 7.0 and the AMS (Applied Material Science) endstation on beamline 9.3.2. The continuing trend towards smaller feature size and increased performance for semiconductor components has driven the semiconductor industry to invest in the development of sophisticated and complex instrumentation for the characterization of microstructures. Among the crucial milestones established by themore » Semiconductor Industry Association are the needs for high quality, defect free and extremely clean silicon wafers, very thin gate oxides, lithographies near 0.1 micron and advanced material interconnect structures. The requirements of future generations cannot be met with current industrial technologies. The purpose of the ALS-Intel CRADA (Cooperative Research And Development Agreement) is to explore, compare and improve the utility of synchrotron-based techniques for practical analysis of substrates of interest to semiconductor chip manufacturing. The first phase of the CRADA project consisted in exploring existing ALS capabilities and techniques on some problems of interest. Some of the preliminary results obtained on Intel samples are discussed here.« less
Experimental characterization of HOTNES: A new thermal neutron facility with large homogeneity area
NASA Astrophysics Data System (ADS)
Bedogni, R.; Sperduti, A.; Pietropaolo, A.; Pillon, M.; Pola, A.; Gómez-Ros, J. M.
2017-01-01
A new thermal neutron irradiation facility, called HOTNES (HOmogeneous Thermal NEutron Source), was established in the framework of a collaboration between INFN-LNF and ENEA-Frascati. HOTNES is a polyethylene assembly, with about 70 cmx70 cm square section and 100 cm height, including a large, cylindrical cavity with diameter 30 cm and height 70 cm. The facility is supplied by a 241Am-B source located at the bottom of this cavity. The facility was designed in such a way that the iso-thermal-fluence surfaces, characterizing the irradiation volume, coincide with planes parallel to the cavity bottom. The thermal fluence rate across a given isofluence plane is as uniform as 1% on a disk with 30 cm diameter. Thermal fluence rate values from about 700 cm-2 s-1 to 1000 cm-2 s-1 can be achieved. The facility design, previously optimized by Monte Carlo simulation, was experimentally verified. The following techniques were used: gold activation foils to assess the thermal fluence rate, semiconductor-based active detector for mapping the irradiation volume, and Bonner Sphere Spectrometer to determine the complete neutron spectrum. HOTNES is expected to be attractive for the scientific community involved in neutron metrology, neutron dosimetry and neutron detector testing.
Li, Zongbin; Yang, Bo; Zou, Naifu; Zhang, Yudong; Esling, Claude; Gan, Weimin; Zhao, Xiang; Zuo, Liang
2017-01-01
Heusler type Ni-Mn-Ga ferromagnetic shape memory alloys can demonstrate excellent magnetic shape memory effect in single crystals. However, such effect in polycrystalline alloys is greatly weakened due to the random distribution of crystallographic orientation. Microstructure optimization and texture control are of great significance and challenge to improve the functional behaviors of polycrystalline alloys. In this paper, we summarize our recent progress on the microstructure control in polycrystalline Ni-Mn-Ga alloys in the form of bulk alloys, melt-spun ribbons and thin films, based on the detailed crystallographic characterizations through neutron diffraction, X-ray diffraction and electron backscatter diffraction. The presented results are expected to offer some guidelines for the microstructure modification and functional performance control of ferromagnetic shape memory alloys. PMID:28772826
Aging of electronics with application to nuclear power plant instrumentation. [PWR; BWR
DOE Office of Scientific and Technical Information (OSTI.GOV)
Johnson, Jr, R T; Thome, F V; Craft, C M
1983-01-01
A survey to identify areas of needed research to understand aging mechanisms for electronics in nuclear power plant instrumentation has been completed. The emphasis was on electronic components such as semiconductors, capacitors, and resistors used in safety-related instrumentation in the reactor containment area. The environmental and operational stress factors which may produce degradation during long-term operation were identified. Some attention was also given to humidity effects as related to seals and encapsulants, and failures in printed circuit boards and bonds and solder joints. Results suggest that neutron as well as gamma irradiations should be considered in simulating the aging environmentmore » for electronic components. Radiation dose-rate effects in semiconductor devices and organic capacitors need to be further investigated, as well as radiation-voltage bias synergistic effects in semiconductor devices and leakage and permeation of moisture through seals in electronics packages.« less
NASA Astrophysics Data System (ADS)
Lipomi, Darren J.
2016-09-01
This presentation describes my group's efforts to understand the molecular and microstructural basis for the mechanical properties of organic semiconductors for organic photovoltaic (OPV) devices. Our work is motivated by two goals. The first goal is to mitigate mechanical forms of degradation of printed modules during roll-to-roll fabrication, installation, and environmental forces—i.e., wind, rain, snow, and thermal expansion and contraction. Mechanical stability is a prerequisite for inexpensive processing on flexible substrates: to encapsulate devices in glass is to surrender this advantage. The second goal is to enable the next generation of ultra-flexible and stretchable solar cells for collapsible, portable, and wearable applications, and as low-cost sources of energy—"solar tarps"—for disaster relief and for the developing world. It may seem that organic semiconductors, due to their carbon framework, are already sufficiently compliant for these applications. We have found, however, that the mechanical properties (stiffness and brittleness) occupy a wide range of values, and can be difficult to predict from molecular structure alone. We are developing an experimental and theoretical framework for how one can combine favorable charge-transport properties and mechanical compliance in organic semiconductor films. In particular, we have explored the roles of the backbone, alkyl side chain, microstructural order, the glass transition, molecular packing with fullerenes, plasticizing effects of additives, extent of separation of [60]PCBM and [70]PCBM, structural randomness in low-bandgap polymers, and reinforcement by encapsulation, on the mechanical compliance. We are exploring the applicability of semi-empirical "back-of-the-envelope" models, along with multi-scale molecular dynamics simulations, with the ultimate goal of designing electroactive organic materials whose mechanical properties can be dialed-in. We have used the insights we have developed to demonstrate several new applications for OPV that demand extreme compliance, including biaxial stretching and conformal bonding of whole devices to hemispheres, and devices with ultrathin encapsulation mounted on human skin that survive significant cyclic mechanical deformation in the outdoor environment.
Combined reactor neutron beam and {sup 60}Co γ-ray radiation effects on CMOS APS image sensors
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wang, Zujun, E-mail: wangzujun@nint.ac.cn; Chen, Wei; Sheng, Jiangkun
The combined reactor neutron beam and {sup 60}Co γ-ray radiation effects on complementary metal-oxide semiconductor (CMOS) active pixel sensors (APS) have been discussed and some new experimental phenomena are presented. The samples are manufactured in the standard 0.35-μm CMOS technology. Two samples were first exposed to {sup 60}Co γ-rays up to the total ionizing dose (TID) level of 200 krad(Si) at the dose rates of 50.0 and 0.2 rad(Si)/s, and then exposed to neutron fluence up to 1 × 10{sup 11} n/cm{sup 2} (1-MeV equivalent neutron fluence). One sample was first exposed to neutron fluence up to 1 × 10{supmore » 11} n/cm{sup 2} (1-MeV equivalent neutron fluence), and then exposed to {sup 60}Co γ-rays up to the TID level of 200 krad(Si) at the dose rate of 0.2 rad(Si)/s. The mean dark signal (K{sub D}), the dark signal non-uniformity (DSNU), and the noise (V{sub N}) versus the total dose and neutron fluence has been investigated. The degradation mechanisms of CMOS APS image sensors have been analyzed, especially for the interaction induced by neutron displacement damage and TID damage.« less
NASA Astrophysics Data System (ADS)
Cha, B. K.; kim, J. Y.; Kim, T. J.; Sim, C.; Cho, G.; Lee, D. H.; Seo, C.-W.; Jeon, S.; Huh, Y.
2011-01-01
In digital neutron radiography system, a thermal neutron imaging detector based on neutron-sensitive scintillating screens with CMOS(complementary metal oxide semiconductor) flat panel imager is introduced for non-destructive testing (NDT) application. Recently, large area CMOS APS (active-pixel sensor) in conjunction with scintillation films has been widely used in many digital X-ray imaging applications. Instead of typical imaging detectors such as image plates, cooled-CCD cameras and amorphous silicon flat panel detectors in combination with scintillation screens, we tried to apply a scintillator-based CMOS APS to neutron imaging detection systems for high resolution neutron radiography. In this work, two major Gd2O2S:Tb and 6LiF/ZnS:Ag scintillation screens with various thickness were fabricated by a screen printing method. These neutron converter screens consist of a dispersion of Gd2O2S:Tb and 6LiF/ZnS:Ag scintillating particles in acrylic binder. These scintillating screens coupled-CMOS flat panel imager with 25x50mm2 active area and 48μm pixel pitch was used for neutron radiography. Thermal neutron flux with 6x106n/cm2/s was utilized at the NRF facility of HANARO in KAERI. The neutron imaging characterization of the used detector was investigated in terms of relative light output, linearity and spatial resolution in detail. The experimental results of scintillating screen-based CMOS flat panel detectors demonstrate possibility of high sensitive and high spatial resolution imaging in neutron radiography system.
Thermal neutron detector and gamma-ray spectrometer utilizing a single material
Stowe, Ashley; Burger, Arnold; Lukosi, Eric
2017-05-02
A combined thermal neutron detector and gamma-ray spectrometer system, including: a detection medium including a lithium chalcopyrite crystal operable for detecting thermal neutrons in a semiconductor mode and gamma-rays in a scintillator mode; and a photodetector coupled to the detection medium also operable for detecting the gamma rays. Optionally, the detection medium includes a .sup.6LiInSe.sub.2 crystal. Optionally, the detection medium comprises a compound formed by the process of: melting a Group III element; adding a Group I element to the melted Group III element at a rate that allows the Group I and Group III elements to react thereby providing a single phase I-III compound; and adding a Group VI element to the single phase I-III compound and heating; wherein the Group I element includes lithium.
Study of the Ohmic Contact Mechanism of Oxidized Ni/Au Contact to p-GaN
NASA Astrophysics Data System (ADS)
Roesler, Erika; Chengyu, Hu; Zhang, Guoyi
2004-03-01
In the semiconductor industry, GaN is important for blue Laser Diodes (LDs) and Light Emitting Diodes (LEDs). In order to maximize efficiency for optoelectronic devices that utilize GaN products, a low contact resistance and an ohmic contact are needed. Previously, the contact resistance has been found to be as low as 10-4 Ohms cm^2. The aim of this research project was to investigate the influence of different annealing conditions for the contact resistance; analyze the microstructure of the electrodes; find the relationship between the microstructure, annealing conditions, and contact resistance; and then explain the mechanism. The sample was grown in a MOCVD system and had a mesa structure. It was activated with Mg-H 800 C for 20 minutes to become a p-type GaN semiconductor. The sample underwent four different annealing conditions. The first condition varied the temperature in constant Oxygen ambient; the second varied the temperature in air; the third varied the percentage of Oxygen with Nitrogen in constant temperature; and the fourth varied the time annealed under Oxygen ambient. The third condition has never previously been tested. We found definite minimums of the contact resistivity (using the TLM method) in the first condition and second conditions at 500 C. The third condition had the best results with a mix of 50% Oxygen and 50the fourth condition had the best results at 5 minutes. Once the effects of the microstructure are analyzed for the sample at each condition, a better understanding of the physical mechanisms to yield the contact resistance will be known.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Viani, Alberto, E-mail: viani@itam.cas.cz; Sotiriadis, Konstantinos; Len, Adél
Full characterization of fired-clay bricks is crucial for the improvement of process variables in manufacturing and, in case of old bricks, for restoration/replacement purposes. To this aim, five bricks produced in a plant in Czech Republic in the past have been investigated with a combination of analytical techniques in order to derive information on the firing process. An additional old brick from another brickyard was also used to study the influence of different raw materials on sample microstructure. The potential of X-ray diffraction with the Rietveld method and small angle neutron scattering technique has been exploited to describe the phasemore » transformations taking place during firing and characterize the brick microstructure. Unit-cell parameter of spinel and amount of hematite are proposed as indicators of the maximum firing temperature, although for the latter, limited to bricks produced from the same raw material. The fractal quality of the surface area of pores obtained from small angle neutron scattering is also suggested as a method to distinguish between bricks produced from different raw clays. - Highlights: • Rietveld method helps in describing microstructure and physical properties of bricks. • XRPD derived cell parameter of spinel is proposed as an indicator of firing temperature. • SANS effectively describes brick micro and nanostructure, including closed porosity. • Fractal quality of pore surface is proposed as ‘fingerprint’ of brick manufacturing.« less
The rheology and microstructure of aging thermoreversible colloidal gels & attractive driven glasses
NASA Astrophysics Data System (ADS)
Wagner, Norman; Gordon, Melissa; Kloxin, Christopher
The properties of colloidal gels and glasses are known to change with age, but the particle-level mechanisms by which aging occurs is are fully understood, which limits our ability to predict macroscopic behavior in these systems. In this work, we quantitatively relate rheological aging to structural aging of a model, homogenous gel and attractive driven glass by simultaneously measuring the bulk properties and gel microstructure using rheometry and small angle neutron scattering (Rheo-SANS), respectively. Specifically, we develop a quantitative and predictive relationship between the macroscopic properties and the underlying microstructure (i . e . , the effective strength of attraction) of an aging colloidal gel and attractive driven glass and study it as a function of the thermal and shear history. Analysis with mode coupling theory is consistent with local particle rearrangements as the mechanism of aging, which lead to monotonically increasing interaction strengths in a continuously evolving material and strongly supports aging as a trajectory in the free energy landscape dominated by local particle relaxations. The analyses and conclusions of this study may be 1) industrially relevant to products that age on commercial timescales, such as paints and pharmaceuticals, 2) applicable to other dynamically arrested systems, such as metallic glasses, and 3) used in the design of new materials. NIST Center for Neutron Research CNS cooperative agreement number #70NANB12H239 and NASA Grant No. NNX15AI19H.
NASA Astrophysics Data System (ADS)
Moya Riffo, A.; Vicente Alvarez, M. A.; Santisteban, J. R.; Vizcaino, P.; Limandri, S.; Daymond, M. R.; Kerr, D.; Okasinski, J.; Almer, J.; Vogel, S. C.
2017-05-01
This work presents a detailed characterization of the microstructural and crystallographic texture changes observed in the transition region in a weld between two Zircaloy-4 cold rolled and recrystallized plates. The microstructural study was performed by optical microscopy under polarized light and scanning electron microscopy (SEM). Texture changes were characterized at different lengthscales: in the micrometric size, orientation imaging maps (OIM) were constructed by electron backscatter diffraction (EBSD), in the millimetre scale, high energy XRD experiments were done at the Advanced Photon Source (USA) and compared to neutron diffraction texture determinations performed in the HIPPO instrument at Los Alamos National Laboratory. In the heat affected zone (HAZ) we observed the development of Widmanstätten microstructures, typical of the α(hcp) to β(bcc) phase transformation. Associated with these changes a rotation of the c-poles is found in the HAZ and fusion zone. While the base material shows the typical texture of a cold rolled plate, with their c-poles pointing 35° apart from the normal direction of the plate in the normal-transversal line, in the HAZ, c-poles align along the transversal direction of the plate and then re-orient along different directions, all of these changes occurring within a lengthscale in the order of mm. The evolution of texture in this narrow region was captured by both OIM and XRD, and is consistent with previous measurements done by Neutron Diffraction in the HIPPO diffractometer at Los Alamos National Laboratory, USA. The microstructural and texture changes along the HAZ were interpreted as arising due to the effect of differences in the cooling rate and β grain size on the progress of the different α variants during transformation. Fast cooling rates and large β grains are associated to weak variant selection during the β->α transformation, while slow cooling rates and fine β grains result in strong variant selection.
Riffo, A. Moya; Vicente Alvarez, M. A.; Santisteban, J. R.; ...
2017-02-08
This study presents a detailed characterization of the microstructural and crystallographic texture changes observed in the transition region in a weld between two Zircaloy-4 cold rolled and recrystallized plates. The microstructural study was performed by optical microscopy under polarized light and scanning electron microscopy (SEM). Texture changes were characterized at different lengthscales: in the micrometric size, orientation imaging maps (OIM) were constructed by electron backscatter diffraction (EBSD), in the millimetre scale, high energy XRD experiments were done at the Advanced Photon Source (USA) and compared to neutron diffraction texture determinations performed in the HIPPO instrument at Los Alamos National Laboratory.more » In the heat affected zone (HAZ) we observed the development of Widmanstätten microstructures, typical of the α( hcp) to β( bcc) phase transformation. Associated with these changes a rotation of the c-poles is found in the HAZ and fusion zone. While the base material shows the typical texture of a cold rolled plate, with their c-poles pointing 35° apart from the normal direction of the plate in the normal-transversal line, in the HAZ, c-poles align along the transversal direction of the plate and then re-orient along different directions, all of these changes occurring within a lengthscale in the order of mm. The evolution of texture in this narrow region was captured by both OIM and XRD, and is consistent with previous measurements done by Neutron Diffraction in the HIPPO diffractometer at Los Alamos National Laboratory, USA. The microstructural and texture changes along the HAZ were interpreted as arising due to the effect of differences in the cooling rate and β grain size on the progress of the different α variants during transformation. Fast cooling rates and large β grains are associated to weak variant selection during the β–>α transformation, while slow cooling rates and fine β grains result in strong variant selection.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Riffo, A. Moya; Vicente Alvarez, M. A.; Santisteban, J. R.
This study presents a detailed characterization of the microstructural and crystallographic texture changes observed in the transition region in a weld between two Zircaloy-4 cold rolled and recrystallized plates. The microstructural study was performed by optical microscopy under polarized light and scanning electron microscopy (SEM). Texture changes were characterized at different lengthscales: in the micrometric size, orientation imaging maps (OIM) were constructed by electron backscatter diffraction (EBSD), in the millimetre scale, high energy XRD experiments were done at the Advanced Photon Source (USA) and compared to neutron diffraction texture determinations performed in the HIPPO instrument at Los Alamos National Laboratory.more » In the heat affected zone (HAZ) we observed the development of Widmanstätten microstructures, typical of the α( hcp) to β( bcc) phase transformation. Associated with these changes a rotation of the c-poles is found in the HAZ and fusion zone. While the base material shows the typical texture of a cold rolled plate, with their c-poles pointing 35° apart from the normal direction of the plate in the normal-transversal line, in the HAZ, c-poles align along the transversal direction of the plate and then re-orient along different directions, all of these changes occurring within a lengthscale in the order of mm. The evolution of texture in this narrow region was captured by both OIM and XRD, and is consistent with previous measurements done by Neutron Diffraction in the HIPPO diffractometer at Los Alamos National Laboratory, USA. The microstructural and texture changes along the HAZ were interpreted as arising due to the effect of differences in the cooling rate and β grain size on the progress of the different α variants during transformation. Fast cooling rates and large β grains are associated to weak variant selection during the β–>α transformation, while slow cooling rates and fine β grains result in strong variant selection.« less
Field-Induced Disorder and Carrier Localization in Molecular Organic Transistors
NASA Astrophysics Data System (ADS)
Ando, M.; Minakata, T.; Duffy, C.; Sirringhaus, H.
2009-06-01
We propose a "field-induced polymorphous disorder" model to explain bias-stress instability in molecular organic thin-film transistors, based on the experimental results showing the strong correlation between the micro-structural change in semiconductor layer composed of penrtacene molecules and the threshold voltage (Vth) shift due to electron trapping in a reversible manner under the successive bias-stress, thermal annealing, and light irradiation.
Bauschinger Effect in an Austenitic Steel: Neutron Diffraction and a Multiscale Approach
NASA Astrophysics Data System (ADS)
Fajoui, Jamal; Gloaguen, David; Legrand, Vincent; Oum, Guy; Kelleher, Joe; Kockelmann, Winfried
2016-05-01
The generation of internal stresses/strains arising from mechanical deformations in single-phase engineering materials was studied. Neutron diffraction measurements were performed to study the evolution of intergranular strains in austenitic steel during sequential loadings. Intergranular strains expand due to incompatibilities between grains and also resulting from single-crystal elastic and plastic anisotropy. A two-level homogenization approach was adopted in order to predict the mechanical state of deformed polycrystals in relation to the microstructure during Bauschinger tests. A mechanical description of the grain was developed through a micro-meso transition based on the Kröner model. The meso-macro transition using a self-consistent approach was applied to deduce the global behavior. Mechanical tests and neutron diffraction measurements were used to validate and assess the model.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Linton, Kory D.; Parish, Chad M.; Smith, Quinlan B.
2017-09-01
This document outlines the results obtained by Oak Ridge National Laboratory (ORNL) in collaboration with the University of Michigan-led Consolidated Innovative Nuclear Research project, “Feasibility of combined ion-neutron irradiation for accessing high dose levels.” In this reporting period, neutron irradiated were prepared and shipped to the University of Michigan for subsequent ion irradiation. The specimens were returned to ORNL’s Low Activation Materials Development and Analysis facility, prepared via focused ion beam for examination using scanning/transmission electron microscopy (S/TEM), and then examined using S/TEM to measure the as-irradiated microstructure. This report briefly summarizes the S/TEM results obtained at ORNL’s Low Activationmore » Materials Development and Analysis facility.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Tan, Lizhen; Stoller, Roger E.; Field, Kevin G.
Extension of light water reactors' useful life will expose austenitic internal core components to irradiation damage levels beyond 100 displacements per atom (dpa), which will lead to profound microstructural evolution and consequent degradation of macroscopic properties. Microstructural evolution, including Frank loops, cavities, precipitates, and segregation at boundaries and the resultant radiation hardening in type 304 and 316 stainless steel (SS) variants, were studied in this work via experimental characterization and multiple simulation methods. Experimental data for up to 40 heats of type 304SS and 316SS variants irradiated in different reactors to 0.6–120 dpa at 275–375°C were either generated from thismore » work or collected from literature reports. These experimental data were then combined with models of Frank loop and cavity evolution, computational thermodynamics and precipitation, and ab initio and rate theory integrated radiation-induced segregation models to provide insights into microstructural evolution and degradation at higher radiation doses.« less
Tan, Lizhen; Stoller, Roger E.; Field, Kevin G.; ...
2015-12-11
Extension of light water reactors' useful life will expose austenitic internal core components to irradiation damage levels beyond 100 displacements per atom (dpa), which will lead to profound microstructural evolution and consequent degradation of macroscopic properties. Microstructural evolution, including Frank loops, cavities, precipitates, and segregation at boundaries and the resultant radiation hardening in type 304 and 316 stainless steel (SS) variants, were studied in this work via experimental characterization and multiple simulation methods. Experimental data for up to 40 heats of type 304SS and 316SS variants irradiated in different reactors to 0.6–120 dpa at 275–375°C were either generated from thismore » work or collected from literature reports. These experimental data were then combined with models of Frank loop and cavity evolution, computational thermodynamics and precipitation, and ab initio and rate theory integrated radiation-induced segregation models to provide insights into microstructural evolution and degradation at higher radiation doses.« less
Measurement science and manufacturing science research
NASA Technical Reports Server (NTRS)
Phillips, D. Howard
1987-01-01
The research program of Semiconductor Research Corp. is managed as three overlapping areas: Manufacturing Sciences, Design Sciences and Microstructure Sciences. A total of 40 universities are participating in the performance of over 200 research tasks. The goals and direction of Manufacturing Sciences research became more clearly focused through the efforts of the Manufacturing Sciences Committee of the SRC Technical Advisory Board (TAB). The mission of the SRC Manufacturing Research is the quantification, control, and understanding of semiconductor manufacturing process necessary to achieve a predictable and profitable product output in the competitive environment of the next decade. The 1994 integrated circuit factory must demonstrate a three level hierarchy of control: (1) operation control, (2) process control, and (3) process design. These levels of control are briefly discussed.
NASA Astrophysics Data System (ADS)
Foster, Tobias; Sottmann, Thomas; Schweins, Ralf; Strey, Reinhard
2008-02-01
Amphiphilic block copolymers of the type poly(ethylenepropylene)-co-poly(ethyleneoxide) dramatically enhance the solubilisation efficiency of non-ionic surfactants in microemulsions that contain equal volumes of water in oil. Consequently, the length scale of the microstructure of such bicontinuous microemulsions is dramatically increased up to the order of a few 100nm. In this paper, we show that this so-called efficiency boosting effect can also be applied to water-in-oil microemulsions with droplet microstructure. Such giant water-in-oil microemulsions would provide confined compartments in which chemical reactions of biological macromolecules can be performed on a single molecule level. With this motivation we investigated the phase behavior and the microstructure of oil-rich microemulsions containing D2O, n-decane(d22), C10E4 and the amphiphilic block copolymer PEP5-PEO5 [poly(ethylenepropylene)-co-poly(ethyleneoxide), weight per block of 5000g/mol]. We found that 15wt% of water can be solubilised by 5wt% of surfactant and block copolymer when about 6wt% of surfactant is replaced by the block copolymer. Small-angle-neutron-scattering experiments were performed to determine the length scales and microstructure topologies of the oil-rich microemulsions. To analyze the scattering data, we derived a novel form factor that also takes into account the scattering contribution of the hydrophobic part of the block copolymer molecules that reside in the surfactant shell. The quantitative analysis of the scattering data with this form factor shows that the radius of the largest droplets amounts up to 30nm. The novel form factor also yielded qualitative information on the stretching of the polymer chains in dependence on the polymer surface density and the droplet radius.
NASA Technical Reports Server (NTRS)
Benafan, Othmane; Noebe, Ronald D.; Padula, Santo A., II; Lerch, Bradley A.; Bigelow, Glen S.; Gaydosh, Darrell J.; Garg, Anita; An, Ke; Vaidyanathan, Raj
2013-01-01
The mechanical and microstructural behavior of a polycrystalline Ni(49.9)Ti(50.1) (at.%) shape memory alloy was investigated as a function of temperature around the transformation regime. The bulk macroscopic responses, measured using ex situ tensile deformation and impulse excitation tests, were compared to the microstructural evolution captured using in situ neutron diffraction. The onset stress for inelastic deformation and dynamic Young's modulus were found to decrease with temperature, in the martensite regime, reaching a significant minimum at approximately 80 C followed by an increase in both properties, attributed to the martensite to austenite transformation. The initial decrease in material compliance during heating affected the ease with which martensite reorientation and detwinning could occur, ultimately impacting the stress for inelastic deformation prior to the start of the reverse transformation.
Assessment of Titanium Aluminide Alloys for High-Temperature Nuclear Structural Applications
NASA Astrophysics Data System (ADS)
Zhu, Hanliang; Wei, Tao; Carr, David; Harrison, Robert; Edwards, Lyndon; Hoffelner, Wolfgang; Seo, Dongyi; Maruyama, Kouichi
2012-12-01
Titanium aluminide (TiAl) alloys exhibit high specific strength, low density, good oxidation, corrosion, and creep resistance at elevated temperatures, making them good candidate materials for aerospace and automotive applications. TiAl alloys also show excellent radiation resistance and low neutron activation, and they can be developed to have various microstructures, allowing different combinations of properties for various extreme environments. Hence, TiAl alloys may be used in advanced nuclear systems as high-temperature structural materials. Moreover, TiAl alloys are good materials to be used for fundamental studies on microstructural effects on irradiation behavior of advanced nuclear structural materials. This article reviews the microstructure, creep, radiation, and oxidation properties of TiAl alloys in comparison with other nuclear structural materials to assess the potential of TiAl alloys as candidate structural materials for future nuclear applications.
Structural responses of metallic glasses under neutron irradiation.
Yang, L; Li, H Y; Wang, P W; Wu, S Y; Guo, G Q; Liao, B; Guo, Q L; Fan, X Q; Huang, P; Lou, H B; Guo, F M; Zeng, Q S; Sun, T; Ren, Y; Chen, L Y
2017-12-01
Seeking nuclear materials that possess a high resistance to particle irradiation damage is a long-standing issue. Permanent defects, induced by irradiation, are primary structural changes, the accumulation of which will lead to structural damage and performance degradation in crystalline materials served in nuclear plants. In this work, structural responses of neutron irradiation in metallic glasses (MGs) have been investigated by making a series of experimental measurements, coupled with simulations in ZrCu amorphous alloys. It is found that, compared with crystalline alloys, MGs have some specific structural responses to neutron irradiation. Although neutron irradiation can induce transient vacancy-like defects in MGs, they are fully annihilated after structural relaxation by rearrangement of free volumes. In addition, the rearrangement of free volumes depends strongly on constituent elements. In particular, the change in free volumes occurs around the Zr atoms, rather than the Cu centers. This implies that there is a feasible strategy for identifying glassy materials with high structural stability against neutron irradiation by tailoring the microstructures, the systems, or the compositions in alloys. This work will shed light on the development of materials with high irradiation resistance.
Predicting neutron damage using TEM with in situ ion irradiation and computer modeling
NASA Astrophysics Data System (ADS)
Kirk, Marquis A.; Li, Meimei; Xu, Donghua; Wirth, Brian D.
2018-01-01
We have constructed a computer model of irradiation defect production closely coordinated with TEM and in situ ion irradiation of Molybdenum at 80 °C over a range of dose, dose rate and foil thickness. We have reexamined our previous ion irradiation data to assign appropriate error and uncertainty based on more recent work. The spatially dependent cascade cluster dynamics model is updated with recent Molecular Dynamics results for cascades in Mo. After a careful assignment of both ion and neutron irradiation dose values in dpa, TEM data are compared for both ion and neutron irradiated Mo from the same source material. Using the computer model of defect formation and evolution based on the in situ ion irradiation of thin foils, the defect microstructure, consisting of densities and sizes of dislocation loops, is predicted for neutron irradiation of bulk material at 80 °C and compared with experiment. Reasonable agreement between model prediction and experimental data demonstrates a promising direction in understanding and predicting neutron damage using a closely coordinated program of in situ ion irradiation experiment and computer simulation.
Ba2NiOsO6: a Dirac-Mott insulator with ferromagnetism near 100 K
NASA Astrophysics Data System (ADS)
Feng, Hl; Calder, S.; Ghimire, M.; Yuan, Yh; Shirako, Y.; Tsujimoto, Y.; Matsushita, Y.; Hu, Z.; Kuo, Cy; Tjeng, Lh; Pi, Tw; Soo, Yl; He, Jf; Tanaka, M.; Katsuya, Y.; Richte, M.; Yamaura, Kazunari
The ferromagnetic semiconductor Ba2NiOsO6(Tmag 100 K) was synthesized at 6 GPa and 1500 ° C. It crystallizes into a double perovskite structure [Fm-3 m; a = 8.0428(1)], where the Ni2+ and Os6+ ions are perfectly ordered at the perovskite B-site. We show that the spin-orbit coupling of Os6+ plays an essential role in opening the charge gap. The magnetic state was investigated by density functional theory calculations and powder neutron diffraction. The latter revealed a collinear ferromagnetic order in a >21-kOe magnetic field at 5 K. The ferromagnetic gapped state is fundamentally different from that of known dilute magnetic semiconductors such as (Ga,Mn)As and (Cd,Mn)Te (Tmag<180 K), the spin-gapless semiconductor Mn2CoAl (Tmag 720 K), and the ferromagnetic insulators EuO (Tmag 70 K) and Bi3Cr3O11(Tmag 220 K). It is also qualitatively different from known ferrimagnetic insulator/semiconductors, which are characterized by an antiparallel spin arrangement. Our report of cubic Ba2NiOsO6 heralds a new class of FM insulator oxides, which may be useful in developing a practical magnetic semiconductor that can be employed in spintronic and quantum magnetic devices.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Baker, Kevin L.
The purpose of this LDRD project was to demonstrate high spatial and temporal resolution x-ray imaging using optical detectors, and in particular the VISAR and OHRV diagnostics on the OMEGA laser. The x-ray source being imaged was a backlighter capsule being imploded by 39 beams of the OMEGA laser. In particular this approach utilized a semiconductor with the side facing the backlighter capsule coated with a thin aluminum layer to allow x rays to pass through the metal layer and then get absorbed in the semiconductor. The other side of the semiconductor was AR coated to allow the VISAR ormore » OHRV probe beam to sample the phase change of the semiconductor as the x rays were absorbed in the semiconductor. This technique is capable of acquiring sub-picosecond 2-D or 1-D x-ray images, detector spatial resolution of better than 10 um and the ability to operate in a high neutron flux environment expected on ignition shots with burning plasmas. In addition to demonstrating this technique on the OMEGA laser, several designs were made to improve the phase sensitivity, temporal resolution and number of frames over the existing diagnostics currently implemented on the OMEGA laser. These designs included both 2-d imaging diagnostics as well as improved 1-D imaging diagnostics which were streaked in time.« less
Effects of neutron irradiation on deformation behavior of nickel-base fastener alloys
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bajaj, R.; Mills, W.J.; Kammenzind, B.F.
1999-07-01
This paper presents the effects of neutron irradiation on the fracture behavior and deformation microstructure of high-strength nickel-base alloy fastener materials, Alloy X-750 and Alloy 625. Alloy X-750 in the HTH condition, and Alloy 625 in the direct aged condition were irradiated to a fluence of 2.4x10{sup 20} n/cm{sup 2} at 264 C in the Advanced Test Reactor. Deformation structures at low strains were examined. It was previously shown that Alloy X-750 undergoes hardening, a significant degradation in ductility and an increase in intergranular fracture. In contrast, Alloy 625 had shown softening with a concomitant increase in ductility and transgranularmore » failure after irradiation. The deformation microstructures of the two alloys were also different. Alloy X-750 deformed by a planar slip mechanism with fine microcracks forming at the intersections of slip bands with grain boundaries. Alloy 625 showed much more homogeneous deformation with fine, closely spaced slip bands and an absence of microcracks. The mechanism(s) of irradiation assisted stress corrosion cracking (IASCC) are discussed.« less
Optimization and Characterization of a Novel Self Powered Solid State Neutron Detector
NASA Astrophysics Data System (ADS)
Clinton, Justin
There is a strong interest in detecting both the diversion of special nuclear material (SNM) from legitimate, peaceful purposes and the transport of illicit SNM across domestic and international borders and ports. A simple solid-state detector employs a planar solar-cell type p-n junction and a thin conversion layer that converts incident neutrons into detectable charged particles, such as protons, alpha-particles, and heavier ions. Although simple planar devices can act as highly portable, low cost detectors, they have historically been limited to relatively low detection efficiencies; ˜10% and ˜0.2% for thermal and fast detectors, respectively. To increase intrinsic detection efficiency, the incorporation of 3D microstructures into p-i-n silicon devices was proposed. In this research, a combination of existing and new types of detector microstructures were investigated; Monte Carlo models, based on analytical calculations, were constructed and characterized using the GEANT4 simulation toolkit. The simulation output revealed that an array of etched hexagonal holes arranged in a honeycomb pattern and filled with either enriched (99% 10B) boron or parylene resulted in the highest intrinsic detection efficiencies of 48% and 0.88% for thermal and fast neutrons, respectively. The optimal parameters corresponding to each model were utilized as the basis for the fabrication of several prototype detectors. A calibrated 252Cf spontaneous fission source was utilized to generate fast neutrons, while thermal neutrons were created by placing the 252Cf in an HDPE housing designed and optimized using the MCNP simulation software. Upon construction, thermal neutron calibration was performed via activation analysis of gold foils and measurements from a 6Li loaded glass scintillator. Experimental testing of the prototype detectors resulted in maximum intrinsic efficiencies of 4.5 and 0.12% for the thermal and fast devices, respectively. The prototype thermal device was filled with natural (19% 10B) boron; scaling the response to 99% 10B enriched boron resulted in an intrinsic efficiency of 22.5%, one of the highest results in the literature. A comparison of simulated and experimental detector responses demonstrated a high degree of correlation, validating the conceptual models.
Research on radiation detectors, boiling transients, and organic lubricants
NASA Technical Reports Server (NTRS)
1974-01-01
The accomplishments of a space projects research facility are presented. The subjects discussed are: (1) a study of radiation resistant semiconductor devices, (2) synthesis of high temperature organic lubricants, (3) departure from phase equilibrium during boiling transients, (4) effects of neutron irradiation on defect state in tungsten, and (5) determination of photon response function of NE-213 liquid scintillation detectors.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kapoor, K.; Saratchandran, N.; Muralidharan, K.
1999-02-01
Pressurized heavy water reactors (PHWR) use zirconium-base alloys for their low neutron-absorption cross section, good mechanical strength, low irradiation creep, and high corrosion resistance in reactor atmospheres. Starting with identical ingots, billets having different microstructures were obtained by three different processing methods for fabrication of Zr-2.5 wt%Nb pressure tubes., The billets were further processed by hot extrusion and cold Pilger tube reducing to the finished product. Microstructural characterization was done at each stage of processing. The effects of the initial billet microstructure on the intermediate and final microstructure and mechanical property results were determined. It was found that the structuremore » at each stage and the final mechanical properties depend strongly on the initial billet microstructure. The structure at the final stage consists of elongated alpha zirconium grains with a network of metastable beta zirconium phase. Some of this metastable phase transforms into stable beta niobium during thermomechanical processing. Billets with quenched structure resulted in less beta niobium at the final stage. The air cooled billets resulted in a large amount of beta niobium. The tensile properties, especially the percentage elongation, were found to vary for the different methods. Higher percentage elongation was observed for billets having quenched structure. Extrusion and forging did not produce any characteristic differences in the properties. The results were used to select a process flow sheet which yields the desired mechanical properties with suitable microstructure in the final product.« less
Using neutron diffraction to examine the onset of mechanical twinning in calcite rocks
NASA Astrophysics Data System (ADS)
Covey-Crump, S. J.; Schofield, P. F.; Oliver, E. C.
2017-07-01
Experimental calibration of the calcite twin piezometer is complicated by the difficulty of establishing the stresses at which the twins observed in the final deformation microstructures actually formed. In principle, this difficulty may be circumvented if the deformation experiments are performed in a polychromatic neutron beam-line because this allows the elastic strain (and hence stress) in differently oriented grains to be simultaneously monitored from diffraction patterns collected as the experiment is proceeding. To test this idea small strain (<0.3%), uniaxial compression experiments have been performed on Carrara marble (grain size 150 μm) and Solnhofen limestone (5 μm) at temperatures of 20°-600 °C using the ENGIN-X instrument at the ISIS neutron facility, UK. At the lowest temperatures (25 °C Carrara; 200 °C Solnhofen) the deformation response was purely elastic up to the greatest stresses applied (60 MPa Carrara; 175 MPa Solnhofen). The sign of the calcite elastic stiffness component c14 is confirmed to be positive when the obverse setting of the calcite rhombohedral lattice in hexagonal axes is used. In the Carrara marble samples deformed at higher temperatures, elastic twinning was initiated at small stresses (<15 MPa) in grains oriented such that the Schmid factor for twinning was positive on more than one e-twin system. At greater stresses (65 MPa at 200 °C decreasing to 41 MPa at 500 °C) there was an abrupt onset of permanent twinning in grains with large Schmid factors for twinning on any one e-twin system. No twinning was observed in the Solnhofen limestone samples deformed at 200° or 400 °C at applied stresses of <180 MPa. These results highlight the potential of this approach for detecting the onset of twinning and provide, through experiments on samples with different microstructures, a strategy for systematically investigating the effects of microstructural variables on crystallographically-controlled inelastic processes.
Deformation and Fabric in Compacted Clay Soils
NASA Astrophysics Data System (ADS)
Wensrich, C. M.; Pineda, J.; Luzin, V.; Suwal, L.; Kisi, E. H.; Allameh-Haery, H.
2018-05-01
Hydromechanical anisotropy of clay soils in response to deformation or deposition history is related to the micromechanics of platelike clay particles and their orientations. In this article, we examine the relationship between microstructure, deformation, and moisture content in kaolin clay using a technique based on neutron scattering. This technique allows for the direct characterization of microstructure within representative samples using traditional measures such as orientation density and soil fabric tensor. From this information, evidence for a simple relationship between components of the deviatoric strain tensor and the deviatoric fabric tensor emerge. This relationship may provide a physical basis for future anisotropic constitutive models based on the micromechanics of these materials.
Microstructural analysis of Ti/Al/Ti/Au ohmic contacts to n-AlGaN/GaN
NASA Astrophysics Data System (ADS)
Chen, J.; Ivey, D. G.; Bardwell, J.; Liu, Y.; Tang, H.; Webb, J. B.
2002-05-01
To develop high quality AlGaN/GaN heterostructure field effect transistors for use in high power, high frequency, and high temperature applications, low resistance, thermal stable ohmic contacts with good surface morphology are essential. Low specific contact resistances have been achieved using an Au/Ti/Al/Ti contact: a minimum value of 6.33×10-6 Ω cm2 was attained after annealing at 700 °C for 30 s. Microstructural analysis using transmission electron microscopy indicated that there is significant interaction between the metallization components and the semiconductor during annealing. The optimum electrical properties correspond to a microstructure that consists of Au2Ti and TiAl layers as well as of a thin Ti-rich layer (~10 nm thick) at the metallization/AlGaN interface. Degradation of the contact occurred for annealing temperatures in excess of 750 °C, and was accompanied by decomposition of the AlGaN layer and formation of a Au-Ti-Al-Ga quaternary phase.
The Role of Grain Size on Neutron Irradiation Response of Nanocrystalline Copper
Mohamed, Walid; Miller, Brandon; Porter, Douglas; Murty, Korukonda
2016-01-01
The role of grain size on the developed microstructure and mechanical properties of neutron irradiated nanocrystalline copper was investigated by comparing the radiation response of material to the conventional micrograined counterpart. Nanocrystalline (nc) and micrograined (MG) copper samples were subjected to a range of neutron exposure levels from 0.0034 to 2 dpa. At all damage levels, the response of MG-copper was governed by radiation hardening manifested by an increase in strength with accompanying ductility loss. Conversely, the response of nc-copper to neutron irradiation exhibited a dependence on the damage level. At low damage levels, grain growth was the primary response, with radiation hardening and embrittlement becoming the dominant responses with increasing damage levels. Annealing experiments revealed that grain growth in nc-copper is composed of both thermally-activated and irradiation-induced components. Tensile tests revealed minimal change in the source hardening component of the yield stress in MG-copper, while the source hardening component was found to decrease with increasing radiation exposure in nc-copper. PMID:28773270
Determination of the Secondary Neutron Flux at the Massive Natural Uranium Spallation Target
NASA Astrophysics Data System (ADS)
Zeman, M.; Adam, J.; Baldin, A. A.; Furman, W. I.; Gustov, S. A.; Katovsky, K.; Khushvaktov, J.; Mar`in, I. I.; Novotny, F.; Solnyshkin, A. A.; Tichy, P.; Tsoupko-Sitnikov, V. M.; Tyutyunnikov, S. I.; Vespalec, R.; Vrzalova, J.; Wagner, V.; Zavorka, L.
The flux of secondary neutrons generated in collisions of the 660 MeV proton beam with the massive natural uranium spallation target was investigated using a set of monoisotopic threshold activation detectors. Sandwiches made of thin high-purity Al, Co, Au, and Bi metal foils were installed in different positions across the whole spallation target. The gamma-ray activity of products of (n,xn) and other studied reactions was measured offline with germanium semiconductor detectors. Reaction yields of radionuclides with half-life exceeding 100 min and with effective neutron energy thresholds between 3.6 MeV and 186 MeV provided us with information about the spectrum of spallation neutrons in this energy region and beyond. The experimental neutron flux was determined using the measured reaction yields and cross-sections calculated with the TALYS 1.8 nuclear reaction program and INCL4-ABLA event generator of MCNP6. Neutron spectra in the region of activation sandwiches were also modeled with the radiation transport code MCNPX 2.7. Neutron flux based on excitation functions from TALYS provides a reasonable description of the neutron spectrum inside the spallation target and is in good agreement with Monte-Carlo predictions. The experimental flux that uses INCL4 cross-sections rather underestimates the modeled spectrum in the whole region of interest, but the agreement within few standard deviations was reached as well. The paper summarizes basic principles of the method for determining the spectrum of high-energy neutrons without employing the spectral adjustment routines and points out to the need for model improvements and precise cross-section measurements.
Nuclear physics of reverse electron flow at pulsar polar caps
NASA Astrophysics Data System (ADS)
Jones, P. B.
2010-01-01
Protons produced in electromagnetic showers formed by the reverse electron flux are usually the largest component of the time-averaged polar cap open magnetic flux line current in neutron stars with positive corotational charge density. Although the electric field boundary conditions in the corotating frame are time independent, instabilities on both medium and short time-scales cause the current to alternate between states in which either protons or positrons and ions form the major component. These properties are briefly discussed in relation to nulling and microstructure in radio pulsars, pair production in an outer gap and neutron stars with high surface temperatures.
NASA Astrophysics Data System (ADS)
Castellote, Marta; Llorente, I.; Andrade, Carmen; Turrillas, X.; Alonso, Cruz; Campo, Javier
2006-11-01
Realkalisation is an electrochemical technique for repairing concrete structures damaged by rebar corrosion due to carbonation. The treatment aims at restoring alkalinity of the concrete by application of a continuous current between the rebar, acting as a cathode, and an external auxiliary electrode placed in a carbonate solution and connected to a positive pole of a power supply. Here we report the application of neutron diffraction in the in situ monitoring of a realkalisation treatment, analysing at the same time the development of the electro-osmotic flux and the microstructural variations in the surroundings of the rebar.
NASA Astrophysics Data System (ADS)
Deng, A. H.; Shan, Y. Y.; Fung, S.; Beling, C. D.
2002-03-01
Unlike its conventional applications in lattice defect characterization, positron annihilation lifetime technique was applied to study temperature-dependent deep level transients in semiconductors. Defect levels in the band gap can be determined as they are determined by conventional deep level transient spectroscopy (DLTS) studies. The promising advantage of this application of positron annihilation over the conventional DLTS is that it could further extract extra microstructure information of deep-level defects, such as whether a deep level defect is vacancy related or not. A demonstration of EL2 defect level transient study in GaAs was shown and the EL2 level of 0.82±0.02 eV was obtained by a standard Arrhenius analysis, similar to that in conventional DLTS studies.
NASA Technical Reports Server (NTRS)
1971-01-01
The reliability of semiconductor devices as influenced by the reliability of wire bonds used in the assembly of the devices is investigated. The specific type of failure dealt with involves fracture of wire bonds as a result of repeated flexure of the wire at the heel of the bond when the devices are operated in an on-off mode. The mechanism of failure is one of induced fracture of the wire. To improve the reliability of a chosen transistor, one-mil diameter wires of aluminum with various alloy additions were studied using an accelerated fatigue testing machine. In addition, the electroprobe was used to study the metallurgy of the wires as to microstructure and kinetics of the growth of insoluble phases. Thermocompression and ultrasonic bonding techniques were also investigated.
NASA Astrophysics Data System (ADS)
Yang, Yong; Chen, Yiren; Huang, Yina; Allen, Todd; Rao, Appajosula
Reactor internal components are subjected to neutron irradiation in light water reactors, and with the aging of nuclear power plants around the world, irradiation-induced material degradations are of concern for reactor internals. Irradiation-induced defects resulting from displacement damage are critical for understanding degradation in structural materials. In the present work, microstructural changes due to irradiation in austenitic stainless steels and cast steels were characterized using transmission electron microscopy. The specimens were irradiated in the BOR-60 reactor, a fast breeder reactor, up to 40 dpa at 320°C. The dose rate was approximately 9.4x10-7 dpa/s. Void swelling and irradiation defects were analyzed for these specimens. A high density of faulted loops dominated the irradiated-altered microstructures. Along with previous TEM results, a dose dependence of the defect structure was established at 320°C.
NASA Astrophysics Data System (ADS)
Stefanik, Milan; Rataj, Jan; Huml, Ondrej; Sklenka, Lubomir
2017-11-01
The VR-1 training reactor operated by the Czech Technical University in Prague is utilized mainly for education of students and training of various reactor staff; however, R&D is also carried out at the reactor. The experimental instrumentation of the reactor can be used for the irradiation experiments and neutron activation analysis. In this paper, the neutron activation analysis (NAA) is used for a study of dietary supplements containing the zinc (one of the essential trace elements for the human body). This analysis includes the dietary supplement pills of different brands; each brand is represented by several different batches of pills. All pills were irradiated together with the standard activation etalons in the vertical channel of the VR-1 reactor at the nominal power (80 W). Activated samples were investigated by the nuclear gamma-ray spectrometry technique employing the semiconductor HPGe detector. From resulting saturated activities, the amount of mineral element (Zn) in the pills was determined using the comparative NAA method. The results show clearly that the VR-1 training reactor is utilizable for neutron activation analysis experiments.
Tanner, A.B.; Moxham, R.M.; Senftle, F.E.; Baicker, J.A.
1972-01-01
A sonde has been built for high-resolution measurement of natural or neutron-induced gamma rays in boreholes. The sonde is 7.3 cm in diameter and about 2.2 m in length and weighs about 16 kg. The lithium-compensated germanium semiconductor detector is stabilized at -185 to -188??C for as much as ten hours by a cryostatic reservoir containing melting propane. During periods when the sonde is not in use the propane is kept frozen by a gravity-fed trickle of liquid nitrogen from a reservoir temporarily attached to the cryostat section. A 252Cf source, shielded from the detector, may be placed in the bottom section of the sonde for anlysis by measurement of neutron-activation or neutron-capture gamma rays. Stability of the cryostat with changing hydrostatic pressure, absence of vibration, lack of need for power to the cryostat during operation, and freedom of orientation make the method desirable for borehole, undersea, space, and some laboratory applications. ?? 1972.
Some cosmic radiation dose measurements aboard flights connecting Zagreb Airport.
Vuković, B; Radolić, V; Lisjak, I; Vekić, B; Poje, M; Planinić, J
2008-02-01
When primary particles from space, mainly protons, enter the atmosphere, they produce interactions with air nuclei, and cosmic-ray showers are induced. The radiation field at aircraft altitude is complex, with different types of particles, mainly photons, electrons, positrons and neutrons, with a large energy range. The non-neutron component of cosmic radiation dose aboard A320 and ATR40 aircraft was measured with TLD-100 (LiF:Mg,Ti) detectors and the Mini 6100 semiconductor dosimeter; the neutron dose was measured with the neutron dosimeter consisted of LR-115 track detector and boron foil BN-1 or 10B converter. The estimated occupational effective dose for the aircraft crew (A320) working 500 h per year was 1.64 mSv. Another experiment was performed at the flights Zagreb-Paris-Buenos Aires and reversely, when one measured non-neutron cosmic radiation dose; for 26.7 h of flight, the MINI 6100 dosimeter gave an average dose rate of 2.3 microSv/h and the TLD dosimeter registered the dose equivalent of 75 microSv or the average dose rate of 2.7 microSv/h; the neutron dosimeter gave the dose rate of 2.4 microSv/h. In the same month, February 2005, a traveling to Japan (24-h-flight: Zagreb-Frankfurt-Tokyo and reversely) and the TLD-100 measurement showed the average dose rate of 2.4microSv/h; the neutron dosimeter gave the dose rate of 2.5 microSv/h. Comparing dose rates of the non-neutron component (low LET) and the neutron one (high LET) of the radiation field at the aircraft flight level, we could conclude that the neutron component carried about 50% of the total dose, that was near other known data.
Induced radioactivity in the forward shielding and semiconductor tracker of the ATLAS detector.
Bĕdajánek, I; Linhart, V; Stekl, I; Pospísil, S; Kolros, A; Kovalenko, V
2005-01-01
The radioactivity induced in the forward shielding, copper collimator and semiconductor tracker modules of the ATLAS detector has been studied. The ATLAS detector is a long-term experiment which, during operation, will require to have service and access to all of its parts and components. The radioactivity induced in the forward shielding was calculated by Monte Carlo methods based on GEANT3 software tool. The results show that the equivalent dose rates on the outer surface of the forward shielding are very low (at most 0.038 microSv h(-1)). On the other hand, the equivalent dose rates are significantly higher on the inner surface of the forward shielding (up to 661 microSv h(-1)) and, especially, at the copper collimator close to the beampipe (up to 60 mSv h(-1)). The radioactivity induced in the semiconductor tracker modules was studied experimentally. The module was activated by neutrons in a training nuclear reactor and the delayed gamma ray spectra were measured. From these measurements, the equivalent dose rate on the surface of the semiconductor tracker module was estimated to be < 100 microSv h(-1) after 100 d of Large Hadron Collider (LHC) operation and 10 d of cooling.
Single event upset in avionics
DOE Office of Scientific and Technical Information (OSTI.GOV)
Taber, A.; Normand, E.
1993-04-01
Data from military/experimental flights and laboratory testing indicate that typical non radiation-hardened 64K and 256K static random access memories (SRAMs) can experience a significant soft upset rate at aircraft altitudes due to energetic neutrons created by cosmic ray interactions in the atmosphere. It is suggested that error detection and correction (EDAC) circuitry be considered for all avionics designs containing large amounts of semi-conductor memory.
Magnetic state of a Zn1 - x Cr x Se bulk crystal
NASA Astrophysics Data System (ADS)
Dubinin, S. F.; Sokolov, V. I.; Korolev, A. V.; Teploukhov, S. G.; Chukalkin, Yu. G.; Parkhomenko, V. D.; Gruzdev, N. B.
2008-06-01
The spin system of a Zn1 - x Cr x Se bulk crystal ( x = 0.045) was studied using thermal-neutron diffraction and magnetic measurements. Previously, it was reported in the literature that thin films (˜200 nm thick) of this type of semiconductors exhibit a ferromagnetic order. In this study, the ferromagnetic order is found to be absent in the bulk crystal.
NASA Astrophysics Data System (ADS)
Igbenehi, H.; Jiguet, S.
2012-09-01
Proton beam lithography a maskless direct-write lithographic technique (well suited for producing 3-Dimensional microstructures in a range of resist and semiconductor materials) is demonstrated as an effective tool in the creation of electrically conductive freestanding micro-structures in an Su 8 + Nano Silver polymer composite. The structures produced show non-ohmic conductivity and fit the percolation theory conduction model of tunneling of separated nanoparticles. Measurements show threshold switching and a change in conductivity of at least 4 orders of magnitude. The predictable range of protons in materials at a given energy is exploited in the creation of high aspect ratio, free standing micro-structures, made from a commercially available SU8 Silver nano-composite (GMC3060 form Gersteltec Inc. a negative tone photo-epoxy with added metallic nano-particles(Silver)) to create films with enhanced electrical properties when exposed and cured. Nano-composite films are directly written on with a finely focused MeV accelerated Proton particle beam. The energy loss of the incident proton beams in the target polymer nano- composite film is concentrated at the end of its range, where damage occurs; changing the chemistry of the nano-composite film via an acid initiated polymerization - creating conduction paths. Changing the energy of the incident beams provide exposed regions with different penetration and damage depth - exploited in the demonstrated cantilever microstructure.
NASA Astrophysics Data System (ADS)
Sharma, Rajiv; Tanna, V. L.; Rao, C. V. S.; Abhangi, Mitul; Vala, Sudhirsinh; Sundaravel; Varatharajan, S.; Sivakumar, S.; Sasi, K.; Pradhan, S.
2017-02-01
Epoxy based glass fiber reinforced composites are the main insulation system for the superconducting magnets of fusion machines. 14MeV neutrons are generated during the DT fusion process, however the energy spectra and flux gets modified to a great extent when they reach the superconducting magnets. Mechanical properties of the GFRP insulation material is reported to degrade up to 30%. As a part of R & D activity, a joint collaboration with IGCAR, Kalpakkam has been established. The indigenous insulation material is subjected to fast neutron fluence of 1014 - 1019 n/m2 (E>0.1 MeV) in FBTR and KAMINI Reactor, India. TRIM software has been used to simulate similar kind of damage produced by neutrons by ion irradiation with 5 MeV Al ions and 3 MeV protons. Fluence of the ions was adjusted to get the same dpa. We present the test experiment of neutron irradiation of the composite material (E-glass, S-glass fiber boron free and DGEBA epoxy). The test results of tensile, inter laminar shear and electrical breakdown strength as per ASTM standards, assessment of micro-structure surface degradation before and after irradiation will be presented. MCNP simulations are carried out for neutron flux, dose and damages produced in the insulation material.
NASA Astrophysics Data System (ADS)
Pecko, Stanislav; Sojak, Stanislav; Slugeň, Vladimír
2014-09-01
Commercial German reactor pressure vessel (RPV) steels were studied by positron annihilation lifetime spectroscopy (PALS). This unique non-destructive method can be effectively applied for the evaluation of microstructural changes and for the analysis of degradation of reactor steels due to neutron irradiation and proton implantation. Studied specimens of German reactor pressure vessel steels are originally from CARINA/CARISMA program. Eight specimens were measured in as-received state and two specimens were irradiated by neutrons in German experimental reactor VAK (Versuchsatomkraftwerk Kahl) in the 1980s. One of the specimens which was also in as-received and neutron irradiated condition was also used for simulation of neutron damage by hydrogen nuclei implantation. Defects with the size of about 1-2 vacancies with relatively small contribution (with intensity on the level of 20-40%) were observed in "as-received" steels. A significant increase in the size of the induced defects due to neutron damage was observed at a level of 2-3 vacancies in the irradiated specimens. The size and intensity of defects reached a similar level as in the specimens irradiated in nuclear reactor due to hydrogen ions implantation with energy of 100 keV (up to the depth <500 nm). This could confirm the ability to simulate neutron damage by ion implantation.
NASA Astrophysics Data System (ADS)
Li, Yan; Zhang, Dongping; Wang, Bo; Liang, Guangxing; Zheng, Zhuanghao; Luo, Jingting; Cai, Xingmin; Fan, Ping
2013-12-01
Vanadium oxide thin films were prepared by DC reactive sputtering method, and the samples were annealed in Ar atmosphere under different temperature for 2 hours. The microstructure, optical and electrical properties of the as-grown and treated samples were characterized by XRD, spectrophotometer, and four-probe technique, respectively. XRD results investigated that the main content of the annealed sample are VO2 and V2O5. With annealing temperature increasing, the intensity of the VO2 phase diffraction peak strengthened. The electrical properties reveal that the annealed samples exhibit semiconductor-to-metal transition characteristic at about 40°C. Comparison of transmission spectra of the samples at room temperature and 100°C, a drastic drop in IR region is found.
Direct printing of microstructures by femtosecond laser excitation of nanocrystals in solution
DOE Office of Scientific and Technical Information (OSTI.GOV)
Shou, Wan; Pan, Heng, E-mail: hp5c7@mst.edu
2016-05-23
We report direct printing of micro/sub-micron structures by femtosecond laser excitation of semiconductor nanocrystals (NCs) in solution. Laser excitation with moderate intensity (10{sup 11}–10{sup 12} W/cm{sup 2}) induces 2D and 3D deposition of CdTe nanocrystals in aqueous solution, which can be applied for direct printing of microstructures. It is believed that laser irradiation induces charge formation on nanocrystals leading to deposition. Furthermore, it is demonstrated that the charged nanocrystals can respond to external electrical bias, enabling a printing approach based on selective laser induced electrophoretic deposition. Finally, energy dispersive X-ray analysis of deposited structures shows oxidation occurs and deposited structure mainlymore » consists of Cd{sub x}O.« less
Radiation Effects in Fission and Fusion Reactors
NASA Astrophysics Data System (ADS)
Odette, G. Robert; Wirth, Brian D.
Since the prediction of "Wigner disease" [1] and the subsequent observation of anisotropic growth of the graphite used in the Chicago Pile, the effects of radiation on materials has been an important technological concern. The broad field of radiation effects impacts many critical advanced technologies, ranging from semiconductor processing to severe materials degradation in nuclear reactor environments. Radiation effects also occur in many natural environments, ranging from deep space to inside the Earth's crust. As selected examples that involve many basic phenomena that cross-cut and illustrate the broader impacts of radiation exposure on materials, this article focuses on modeling microstructural changes in iron-based ferritic alloys under high-energy neutron irradiation relevant to light water fission reactor pressure vessels. We also touch briefly on radiation effects in structural alloys for fusion reactor first wall and blanket structures; in this case the focus is on modeling the evolution of self-interstitial atom clusters and dislocation loops. Note, since even the narrower topic of structural materials for nuclear energy applications encompass a vast literature dating from 1942, the references included in this article are primarily limited to these two narrower subjects. Thus, the references cited here are presented as examples, rather than comprehensive bibliographies. However, the interested reader is referred to proceedings of continuing symposia series that have been sponsored by several organizations, several monographs [2-4] and key journals (e.g., Journal of Nuclear Materials, Radiation Effects and Defects in Solids).
Diamagnetic excitons and exciton magnetopolaritons in semiconductors
NASA Astrophysics Data System (ADS)
Seisyan, R. P.
2012-05-01
Interband magneto-absorption in semiconductors is reviewed in the light of the diamagnetic exciton (DE) concept. Beginning with a proof of the exciton nature of oscillating-magnetoabsorption (the DE discovery), development of the DE concept is discussed, including definition of observation conditions, quasi-cubic approximation for hexagonal crystals, quantum-well effects in artificial structures, and comprehension of an important role of the DE polariton. The successful use of the concept application to a broad range of substances is reviewed, namely quasi-Landau magnetic spectroscopy of the ‘Rydberg’ exciton states in cubic semiconductors such as InP and GaAs and in hexagonal ones such as CdSe, the proof of exciton participation in the formation of optical spectra in narrow-gap semiconductors such as InSb, InAs, and, especially, PbTe, observation of DE spectra in semiconductor solid solutions like InGaAs. The most fundamental findings of the DE spectroscopy for various quantum systems are brought together, including the ‘Coulomb-well’ effect, fine structure of discrete oscillatory states in the InGaAs/GaAs multiple quantum wells, the magneto-optical observation of above-barrier exciton. Prospects of the DE physics in ultrahigh magnetic field are discussed, including technological creation of controllable low-dimensional objects with extreme oscillator strengths, formation of magneto-quantum exciton polymer, and even modelling of the hydrogen behaviour in the atmosphere of a neutron star.
Cosmic radiation dose in aircraft--a neutron track etch detector.
Vuković, B; Radolić, V; Miklavcić, I; Poje, M; Varga, M; Planinić, J
2007-01-01
Cosmic radiation bombards us at high altitude by ionizing particles. The radiation environment is a complex mixture of charged particles of solar and galactic origin, as well as of secondary particles produced in interaction of the galactic cosmic particles with the nuclei of atmosphere of the Earth. The radiation field at aircraft altitude consists of different types of particles, mainly photons, electrons, positrons and neutrons, with a large energy range. The non-neutron component of cosmic radiation dose aboard ATR 42 and A 320 aircrafts (flight level of 8 and 11 km, respectively) was measured with TLD-100 (LiF:Mg,Ti) detectors and the Mini 6100 semiconductor dosimeter. The estimated occupational effective dose for the aircraft crew (A 320) working 500 h per year was 1.64 mSv. Other experiments, or dose rate measurements with the neutron dosimeter, consisting of LR-115 track detector and boron foil BN-1 or 10B converter, were performed on five intercontinental flights. Comparison of the dose rates of the non-neutron component (low LET) and the neutron one (high LET) of the radiation field at the aircraft flight level showed that the neutron component carried about 50% of the total dose. The dose rate measurements on the flights from the Middle Europe to the South and Middle America, then to Korea and Japan, showed that the flights over or near the equator region carried less dose rate; this was in accordance with the known geomagnetic latitude effect.
SMA texture and reorientation: simulations and neutron diffraction studies
NASA Astrophysics Data System (ADS)
Gao, Xiujie; Brown, Donald W.; Brinson, L. Catherine
2005-05-01
With increased usage of shape memory alloys (SMA) for applications in various fields, it is important to understand how the material behavior is affected by factors such as texture, stress state and loading history, especially for complex multiaxial loading states. Using the in-situ neutron diffraction loading facility (SMARTS diffractometer) and ex situ inverse pole figure measurement facility (HIPPO diffractometer) at the Los Alamos Neutron Science Center (LANCE), the macroscopic mechanical behavior and texture evolution of Nickel-Titanium (Nitinol) SMAs under sequential compression in alternating directions were studied. The simplified multivariant model developed at Northwestern University was then used to simulate the macroscopic behavior and the microstructural change of Nitinol under this sequential loading. Pole figures were obtained via post-processing of the multivariant results for volume fraction evolution and compared quantitatively well to the experimental results. The experimental results can also be used to test or verify other SMA constitutive models.
The Thermal and Microstructural Effect of Plasticizing HMX-Nitrocellulose Composites
Yeager, John David; Watkins, Erik Benjamin; Duque, Amanda Lynn; ...
2017-03-15
Thermal ignition via self-heating (cook-off) of cyclotetramethylene-tetranitramine (HMX)-containing plastic-bonded explosives (PBXs) is driven by the β → δ phase transition in the HMX, which is affected if not dominated by microstructure. Here, we studied the HMX-binder interface and phase transition for several variations of PBX 9404 (HMX with plasticized nitrocellulose [NC] binder). Neutron reflectometry was used to examine the interface under several conditions—pristine, after aging, and after thermal treatment. The initial interfacial structure depended on the plasticizer, but the interface homogenized over time. Thermal and optical analyses showed that all formulated materials had higher transition temperatures than neat HMX. Thismore » effect increased with NC content.« less
The Thermal and Microstructural Effect of Plasticizing HMX-Nitrocellulose Composites
NASA Astrophysics Data System (ADS)
Yeager, John D.; Watkins, Erik B.; Higginbotham Duque, Amanda L.; Majewski, Jaroslaw
2018-01-01
Thermal ignition via self-heating (cook-off) of cyclotetramethylene-tetranitramine (HMX)-containing plastic-bonded explosives (PBXs) is driven by the β → δ phase transition in the HMX, which is affected if not dominated by microstructure. Here, the HMX-binder interface and phase transition were studied for several variations of PBX 9404 (HMX with plasticized nitrocellulose [NC] binder). Neutron reflectometry was used to examine the interface under several conditions-pristine, after aging, and after thermal treatment. The initial interfacial structure depended on the plasticizer, but the interface homogenized over time. Thermal and optical analyses showed that all formulated materials had higher transition temperatures than neat HMX. This effect increased with NC content.
Chemical routes to nanocrystalline and thin-film III-VI and I-III-VI semiconductors
NASA Astrophysics Data System (ADS)
Hollingsworth, Jennifer Ann
1999-11-01
The work encompasses: (1) catalyzed low-temperature, solution-based routes to nano- and microcrystalline III-VI semiconductor powders and (2) spray chemical vapor deposition (spray CVD) of I-III-VI semiconductor thin films. Prior to this work, few, if any, examples existed of chemical catalysis applied to the synthesis of nonmolecular, covalent solids. New crystallization strategies employing catalysts were developed for the regioselective syntheses of orthorhombic InS (beta-InS), the thermodynamic phase, and rhombohedral InS (R-InS), a new, metastable structural isomer. Growth of beta-InS was facilitated by a solvent-suspended, molten-metal flux in a process similar to the SolutionLiquid-Solid (SLS) growth of InP and GaAs fibers and single-crystal whiskers. In contrast, metastable R-InS, having a pseudo-graphitic layered structure, was prepared selectively when the molecular catalyst, benzenethiol, was present in solution and the inorganic "catalyst" (metal flux) was not present. In the absence of any crystal-growth facilitator, metal flux or benzenethiol, amorphous product was obtained under the mild reaction conditions employed (T ≤ 203°C). The inorganic and organic catalysts permitted the regio-selective syntheses of InS and were also successfully applied to the growth of network and layered InxSey compounds, respectively, as well as nanocrystalline In2S3. Extensive microstructural characterization demonstrated that the layered compounds grew as fullerene-like nanostructures and large, colloidal single crystals. Films of the I-III-VI compounds, CuInS2, CuGaS2, and Cu(In,Ga)S 2, were deposited by spray CVD using the known single-source metalorganic precursor, (Ph3P)2CuIn(SEt)4, a new precursor, (Ph3P)2CuGa(SEt)3, and a mixture of the two precursors, respectively. The CulnS2 films exhibited a variety of microstructures from dense and faceted or platelet-like to porous and dendritic. Crystallographic orientations ranged from strongly [112] to strongly [220] oriented. Microstructure, orientation, and growth kinetics were controlled by changing processing parameters: carrier-gas flow rate, substrate temperature, and precursor-solution concentration. Low resistivities (<50 O cm) were associated with [220]-oriented films. All CuInS2 films were approximately stoichiometric and had the desired bandgap (Eg ≅ 1.4 eV) for application as the absorber layer in thin-film photovoltaic devices.
Modelling of deformation and recrystallisation microstructures in rocks and ice
NASA Astrophysics Data System (ADS)
Bons, Paul D.; Evans, Lynn A.; Gomez-Rivas, Enrique; Griera, Albert; Jessell, Mark W.; Lebensohn, Ricardo; Llorens, Maria-Gema; Peternell, Mark; Piazolo, Sandra; Weikusat, Ilka; Wilson, Chris J. L.
2015-04-01
Microstructures both record the deformation history of a rock and strongly control its mechanical properties. As microstructures in natural rocks only show the final "post-mortem" state, geologists have attempted to simulate the development of microstructures with experiments and later numerical models. Especially in-situ experiments have given enormous insight, as time-lapse movies could reveal the full history of a microstructure. Numerical modelling is an alternative approach to simulate and follow the change in microstructure with time, unconstrained by experimental limitations. Numerical models have been applied to a range of microstructural processes, such as grain growth, dynamic recrystallisation, porphyroblast rotation, vein growth, formation of mylonitic fabrics, etc. The numerical platform "Elle" (www.elle.ws) in particular has brought progress in the simulation of microstructural development as it is specifically designed to include the competition between simultaneously operating processes. Three developments significantly improve our capability to simulate microstructural evolution: (1) model input from the mapping of crystallographic orientation with EBSD or the automatic fabric analyser, (2) measurement of grain size and crystallographic preferred orientation evolution using neutron diffraction experiments and (3) the implementation of the full-field Fast Fourier Transform (FFT) solver for modelling anisotropic crystal-plastic deformation. The latter enables the detailed modelling of stress and strain as a function of local crystallographic orientation, which has a strong effect on strain localisation such as, for example, the formation of shear bands. These models can now be compared with the temporal evolution of crystallographic orientation distributions in in-situ experiments. In the last decade, the possibility to combine experiments with numerical simulations has allowed not only verification and refinement of the numerical simulation technique but also increased significantly the ability to predict and/or interpret natural microstructures. This contribution will present the most recent developments in in-situ and numerical modelling of deformation and recrystallisation microstructures in rocks and in ice.
Realization of highly efficient hexagonal boron nitride neutron detectors
Maity, A.; Doan, T. C.; Li, J.; ...
2016-08-16
Here, we report the achievement of highly efficient 10B enriched hexagonal boron nitride (h- 10BN) direct conversion neutron detectors. These detectors were realized from freestanding 4-in. diameter h- 10BN wafers 43 μm in thickness obtained from epitaxy growth and subsequent mechanical separation from sapphire substrates. Both sides of the film were subjected to ohmic contact deposition to form a simple vertical “photoconductor-type” detector. Transport measurements revealed excellent vertical transport properties including high electrical resistivity (>10 13 Ω cm) and mobility-lifetime (μτ) products. A much larger μτ product for holes compared to that of electrons along the c-axis of h- BNmore » was observed, implying that holes (electrons) behave like majority (minority) carriers in undoped h- BN. Exposure to thermal neutrons from a californium-252 ( 252Cf) source moderated by a high density polyethylene moderator reveals that 43 μm h- 10BN detectors possess 51.4% detection efficiency at a bias voltage of 400 V, which is the highest reported efficiency for any semiconductor-based neutron detector. The results point to the possibility of obtaining highly efficient, compact solid-state neutron detectors with high gamma rejection and low manufacturing and maintenance costs.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Cable, J.W.
The diffuse scattering of neutrons from magnetic materials provides unique and important information regarding the spatial correlations of the atoms and the spins. Such measurements have been extensively applied to magnetically ordered systems, such as the ferromagnetic binary alloys, for which the observed correlations describe the magnetic moment fluctuations associated with local environment effects. With the advent of polarization analysis, these techniques are increasingly being applied to study disordered paramagnetic systems such as the spin-glasses and the diluted magnetic semiconductors. The spin-pair correlations obtained are essential in understanding the exchange interactions of such systems. In this paper, we describe recentmore » neutron diffuse scattering results on the atom-pair and spin-pair correlations in some of these disordered magnetic systems. 56 refs.« less
Luo, X; Tseng, L T; Lee, W T; Tan, T T; Bao, N N; Liu, R; Ding, J; Li, S; Lauter, V; Yi, J B
2017-07-24
Room temperature ferromagnetism has been observed in the Cu doped ZnO films deposited under an oxygen partial pressure of 10 -3 and 10 -5 torr on Pt (200 nm)/Ti (45 nm)/Si (001) substrates using pulsed laser deposition. Due to the deposition at relatively high temperature (873 K), Cu and Ti atoms diffuse to the surface and interface, which significantly affects the magnetic properties. Depth sensitive polarized neutron reflectometry method provides the details of the composition and magnetization profiles and shows that an accumulation of Cu on the surface leads to an increase in the magnetization near the surface. Our results reveal that the presence of the copper at Zn sites induces ferromagnetism at room temperature, confirming intrinsic ferromagnetism.
Static sublimation purification process and characterization of LiZnAs semiconductor material
NASA Astrophysics Data System (ADS)
Montag, Benjamin W.; Reichenberger, Michael A.; Edwards, Nathaniel S.; Ugorowski, Philip B.; Sunder, Madhana; Weeks, Joseph; McGregor, Douglas S.
2016-03-01
Refinement of the class AIBIICV materials continue as a candidate for solid-state neutron detectors. Such a device would have greater efficiency, in a compact form, than present day gas-filled 3He and 10BF3 detectors. The 6Li(n,t)4He reaction yields a total Q value of 4.78 MeV, larger than 10B, and easily identified above background radiations. Hence, devices composed of either natural Li (nominally 7.5% 6Li) or enriched 6Li (usually 95% 6Li) may provide a semiconductor material for compact high efficiency neutron detectors. A sub-branch of the III-V semiconductors, the filled tetrahedral compounds, AIBIICV, known as Nowotny-Juza compounds, are known for their desirable cubic crystal structure. Starting material was synthesized by equimolar portions of Li, Zn, and As sealed under vacuum (10-6 Torr) in quartz ampoules with a boron nitride lining, and reacted in a compounding furnace [1]. The synthesized material showed signs of high impurity levels from material and electrical property characterization. In the present work, a static vacuum sublimation of synthesized LiZnAs loaded in a quartz vessel was performed to help purify the synthesized material. The chemical composition of the sublimed material and remains material was confirmed by Inductively Coupled Plasma Optical Emission Spectroscopy (ICP-OES). Lithium was not detected in the sublimed material, however, near stoichiometric amounts of each constituent element were found in the remains material for LiZnAs. X-ray diffraction phase identification scans of the remains material and sublimed material were compared, and further indicated the impurity materials were removed from the synthesized materials. The remaining powder post the sublimation process showed characteristics of a higher purity ternary compound.
2017-11-01
Department of Physics and Astronomy , University of Nebraska Now post-doctoral associate, Department of Physics, University of California - Riverside...9320 Peter A. Dowben, Charles Bessey Professor of Physics, Nebraska Center for Materials and Nanoscience, Department of Physics and Astronomy ...pdowben@unl.edu Kirill D. Belashchenko, Associate Professor, Nebraska Center for Materials and Nanoscience, Department of Physics and Astronomy
NASA Astrophysics Data System (ADS)
Li, Zongbin; Zhang, Yudong; Esling, Claude; Gan, Weimin; Zou, Naifu; Zhao, Xiang; Zuo, Liang
2014-07-01
The influences of uniaxial compressive stress on martensitic transformation were studied on a polycrystalline Ni-Mn-Ga bulk alloy prepared by directional solidification. Based upon the integrated in-situ neutron diffraction measurements, direct experimental evidence was obtained on the variant redistribution of seven-layered modulated (7M) martensite, triggered by external uniaxial compression during martensitic transformation. Large anisotropic lattice strain, induced by the cyclic thermo-mechanical treatment, has led to the microstructure modification by forming martensitic variants with a strong ⟨0 1 0⟩7M preferential orientation along the loading axis. As a result, the saturation of magnetization became easier to be reached.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Li, Zongbin; Zou, Naifu; Zhao, Xiang
2014-07-14
The influences of uniaxial compressive stress on martensitic transformation were studied on a polycrystalline Ni-Mn-Ga bulk alloy prepared by directional solidification. Based upon the integrated in-situ neutron diffraction measurements, direct experimental evidence was obtained on the variant redistribution of seven-layered modulated (7M) martensite, triggered by external uniaxial compression during martensitic transformation. Large anisotropic lattice strain, induced by the cyclic thermo-mechanical treatment, has led to the microstructure modification by forming martensitic variants with a strong 〈0 1 0〉{sub 7M} preferential orientation along the loading axis. As a result, the saturation of magnetization became easier to be reached.
NASA Astrophysics Data System (ADS)
Imantalab, O.; Fattah-alhosseini, A.; Keshavarz, M. K.; Mazaheri, Y.
2016-02-01
In this work, electrochemical behavior of annealed (micro-) and nano-grained pure copper (fabricated by accumulative roll bonding process) in phosphate buffer solutions of various pH values ranging from 10.69 to 12.59 has been studied. Before any electrochemical measurements, evaluation of microstructure was obtained by optical microscope and transmission electron microscopy. To investigate the electrochemical behavior of the samples, the potentiodynamic polarization, Mott-Schottky analysis, and electrochemical impedance spectroscopy (EIS) were carried out. Potentiodynamic polarization plots and EIS measurements revealed that as a result of grain refinement, the passive behavior of the nano-grained sample was improved compared to that of annealed pure copper. Also, Mott-Schottky analysis indicated that the passive films behaved as p-type semiconductors and grain refinement did not change the semiconductor type of passive films.
Design and fabrication of AlGaInP-based micro-light-emitting-diode array devices
NASA Astrophysics Data System (ADS)
Bao, Xingzhen; Liang, Jingqiu; Liang, Zhongzhu; Wang, Weibiao; Tian, Chao; Qin, Yuxin; Lü, Jinguang
2016-04-01
An integrated high-resolution (individual pixel size 80 μm×80 μm) solid-state self-emissive active matrix programmed with 320×240 micro-light-emitting-diode arrays structure was designed and fabricated on an AlGaInP semiconductor chip using micro electro-mechanical systems, microstructure and semiconductor fabricating techniques. Row pixels share a p-electrode and line pixels share an n-electrode. We experimentally investigated GaAs substrate thickness affects the electrical and optical characteristics of the pixels. For a 150-μm-thick GaAs substrate, the single pixel output power was 167.4 μW at 5 mA, and increased to 326.4 μW when current increase to 10 mA. The device investigated potentially plays an important role in many fields.
Morphology, Microstructure and Transport Properties of ZnO Decorated SiO2 Nanoparticles (Preprint)
2010-04-15
ZnO decorated SiO2 nanoparticles . While the growth conditions we employ for synthesis of ZnO nanocrys- tals are similar to... oxide nanocrystal synthesis on semiconductor oxide nanoparticles is an area yet to be fully explored. One advantage of this approach is that it enables... nanoparticles were resuspended. This washing process was repeated three times. In the hydrolytic ZnO synthesis method, a 1 ml suspension of SiO2 nanoshells
NASA Astrophysics Data System (ADS)
Castin, N.; Bonny, G.; Bakaev, A.; Ortiz, C. J.; Sand, A. E.; Terentyev, D.
2018-03-01
We upgrade our object kinetic Monte Carlo (OKMC) model, aimed at describing the microstructural evolution in tungsten (W) under neutron and ion irradiation. Two main improvements are proposed based on recently published atomistic data: (a) interstitial carbon impurities, and their interaction with radiation-induced defects (point defect clusters and loops), are more accurately parameterized thanks to ab initio findings; (b) W transmutation to rhenium (Re) upon neutron irradiation, impacting the diffusivity of radiation defects, is included, also relying on recent atomistic data. These essential amendments highly improve the portability of our OKMC model, providing a description for the formation of SIA-type loops under different irradiation conditions. The model is applied to simulate neutron and ion irradiation in pure W samples, in a wide range of fluxes and temperatures. We demonstrate that it performs a realistic prediction of the population of TEM-visible voids and loops, as compared to experimental evidence. The impact of the transmutation of W to Re, and of carbon trapping, is assessed.
Characterization of European sword blades through neutron imaging techniques
NASA Astrophysics Data System (ADS)
Salvemini, F.; Grazzi, F.; Peetermans, S.; Gener, M.; Lehmann, E. H.; Zoppi, M.
2014-09-01
In the present work, we have studied two European rapier blades, dating back to the period ranging from the Late Renaissance to the Early Modern Age (about 17th to 18th century). In order to determine variation in quality and differences in technology, a study was undertaken with the purpose to observe variations in the blade microstructure (and consequently in the construction processes). The samples, which in the present case were expendable, have been investigated, preliminarily, through standard metallography and then by means of white beam and energy-selective neutron imaging. The comparison of the results, using the two techniques, turned out to be satisfactory, with a substantial quantitative agreement of the results obtained with the two techniques, and show the complementarity of the two methods. Metallography has been considered up to now the method of choice for metal material characterization. The correspondence between the two methods, as well as the non-invasive character of the neutron-based techniques and its possibility to obtain 3D reconstruction, candidate neutron imaging as an important and quantitatively reliable technique for metal characterization.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Stash, A. I., E-mail: astas@yandex.ru; Ivanov, S. A.; Stefanovich, S. Yu.
Neutron irradiation is a unique tool for forming new structural states of ferroelectrics, which cannot be obtained by conventional methods. The inf luence of the irradiation by two doses of fast neutrons (F = 1 × 10{sup 17} and 3 × 10{sup 17} cm{sup –2}) on the structure and properties of KNbO{sub 3} single crystals has been considered for the first time. The developed method for taking into account the experimental correction to the diffuse scattering has been used to analyze the structural changes occurring in KNbO{sub 3} samples at T = 295 K and their correlations with the behaviormore » of dielectric and nonlinear optical characteristics. The irradiation to the aforementioned doses retains the KNbO{sub 3} polar structure, shifting Т{sub Ð}¡ to lower temperatures and significantly affecting only the thermal parameters and microstructure of single crystals. Neutron irradiation with small atomic displacements provides a structure similar to the high-temperature modification of an unirradiated KNbO{sub 3} crystal.« less
Wu, Z.; Bei, H.
2015-07-01
Recently, a structurally-simple but compositionally-complex FeNiCoMnCr high entropy alloy was found to have excellent mechanical properties (e.g., high strength and ductility). To understand the potential of using high entropy alloys as structural materials for advanced nuclear reactor and power plants, it is necessary to have a thorough understanding of their structural stability and mechanical properties degradation under neutron irradiation. Furthermore, this requires us to develop a similar model alloy without Co because material with Co will make post-neutron-irradiation testing difficult due to the production of the 60Co radioisotope. In order to achieve this goal, a FCC-structured single-phase alloy with amore » composition of FeNiMnCr 18 was successfully developed. This near-equiatomic FeNiMnCr 18 alloy has good malleability and its microstructure can be controlled by thermomechanical processing. By rolling and annealing, the as-cast elongated-grained-microstructure is replaced by homogeneous equiaxed grains. The mechanical properties (e.g., strength and ductility) of the FeNiMnCr 18 alloy are comparable to those of the equiatomic FeNiCoMnCr high entropy alloy. Both strength and ductility increase with decreasing deformation temperature, with the largest difference occurring between 293 and 77 K. Extensive twin-bands which are bundles of numerous individual twins are observed when it is tensile-fractured at 77 K. No twin bands are detected by EBSD for materials deformed at 293 K and higher. Ultimately the unusual temperature-dependencies of UTS and uniform elongation could be caused by the development of the dense twin substructure, twin-dislocation interactions and the interactions between primary and secondary twinning systems which result in a microstructure refinement and hence cause enhanced strain hardening and postponed necking.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ravotti, F.; Glaser, M.; Saigne, F.
Radiation-sensing metal-oxide-semiconductor field-effect transistors produced by the laboratory LAAS-CNRS were exposed to a harsh hadron field that represents the real radiation environment expected at the CERN Large Hadron Collider experiments. The long-term stability of the transistor's I{sub ds}-V{sub gs} characteristic was investigated using the isochronal annealing technique. In this work, devices exposed to high intensity hadron levels ({phi}{>=}10{sup 12} neutrons/cm{sup 2}) show evidences of displacement damages in the I{sub ds}-V{sub gs} annealing behavior. By comparing experimental and simulated results over 14 months, the isochronal annealing method, originally devoted to oxide trapped charge, is shown to enable prediction of the recoverymore » of silicon bulk defects.« less
NASA Astrophysics Data System (ADS)
Zhao, Yixin; Xue, Shanbin; Han, Songbai; Chen, Zhongwei; Liu, Shimin; Elsworth, Derek; He, Linfeng; Cai, Jianchao; Liu, Yuntao; Chen, Dongfeng
2017-07-01
Capillary imbibition in variably saturated porous media is important in defining displacement processes and transport in the vadose zone and in low-permeability barriers and reservoirs. Nonintrusive imaging in real time offers the potential to examine critical impacts of heterogeneity and surface properties on imbibition dynamics. Neutron radiography is applied as a powerful imaging tool to observe temporal changes in the spatial distribution of water in porous materials. We analyze water imbibition in both homogeneous and heterogeneous low-permeability sandstones. Dynamic observations of the advance of the imbibition front with time are compared with characterizations of microstructure (via high-resolution X-ray computed tomography (CT)), pore size distribution (Mercury Intrusion Porosimetry), and permeability of the contrasting samples. We use an automated method to detect the progress of wetting front with time and link this to square-root-of-time progress. These data are used to estimate the effect of microstructure on water sorptivity from a modified Lucas-Washburn equation. Moreover, a model is established to calculate the maximum capillary diameter by modifying the Hagen-Poiseuille and Young-Laplace equations based on fractal theory. Comparing the calculated maximum capillary diameter with the maximum pore diameter (from high-resolution CT) shows congruence between the two independent methods for the homogeneous silty sandstone but less effectively for the heterogeneous sandstone. Finally, we use these data to link observed response with the physical characteristics of the contrasting media—homogeneous versus heterogeneous—and to demonstrate the sensitivity of sorptivity expressly to tortuosity rather than porosity in low-permeability sandstones.
Proton irradiated graphite grades for a long baseline neutrino facility experiment
NASA Astrophysics Data System (ADS)
Simos, N.; Nocera, P.; Zhong, Z.; Zwaska, R.; Mokhov, N.; Misek, J.; Ammigan, K.; Hurh, P.; Kotsina, Z.
2017-07-01
In search of a low-Z pion production target for the Long Baseline Neutrino Facility (LBNF) of the Deep Underground Neutrino Experiment (DUNE) four graphite grades were irradiated with protons in the energy range of 140-180 MeV, to peak fluence of ˜6.1 ×1020 p /cm2 and irradiation temperatures between 120 - 200 °C . The test array included POCO ZXF-5Q, Toyo-Tanso IG 430, Carbone-Lorraine 2020 and SGL R7650 grades of graphite. Irradiation was performed at the Brookhaven Linear Isotope Producer. Postirradiation analyses were performed with the objective of (a) comparing their response under the postulated irradiation conditions to guide a graphite grade selection for use as a pion target and (b) understanding changes in physical and mechanical properties as well as microstructure that occurred as a result of the achieved fluence and in particular at this low-temperature regime where pion graphite targets are expected to operate. A further goal of the postirradiation evaluation was to establish a proton-neutron correlation damage on graphite that will allow for the use of a wealth of available neutron-based damage data in proton-based studies and applications. Macroscopic postirradiation analyses as well as energy dispersive x-ray diffraction of 200 KeV x rays at the NSLS synchrotron of Brookhaven National Laboratory were employed. The macroscopic analyses revealed differences in the physical and strength properties of the four grades with behavior however under proton irradiation that qualitatively agrees with that reported for graphite under neutrons for the same low temperature regime and in particular the increase of thermal expansion, strength and Young's modulus. The proton fluence level of ˜1020 cm-2 where strength reaches a maximum before it begins to decrease at higher fluences has been identified and it agrees with neutron-induced changes. X-ray diffraction analyses of the proton irradiated graphite revealed for the first time the similarity in microstructural graphite behavior to that under neutron irradiation and the agreement between the fluence threshold of ˜5 ×1020 cm-2 where the graphite lattice undergoes a dramatic change. The confirmed similarity in behavior and agreement in threshold fluences for proton and neutron irradiation effects on graphite reported for the first time in this study will enable the safe utilization of the wealth of neutron irradiation data on graphite that extends to much higher fluences and different temperature regimes by the proton accelerator community searching for multi-MW graphite targets.
Proton irradiated graphite grades for a long baseline neutrino facility experiment
DOE Office of Scientific and Technical Information (OSTI.GOV)
Simos, N.; Nocera, P.; Zhong, Z.
In search of a low-Z pion production target for the Long Baseline Neutrino Facility (LBNF) of the Deep Underground Neutrino Experiment (DUNE) four graphite grades were irradiated with protons in the energy range of 140–180 MeV, to peak fluence of ~6.1×10 20 p/cm 2 and irradiation temperatures between 120–200 °C. The test array included POCO ZXF-5Q, Toyo-Tanso IG 430, Carbone-Lorraine 2020 and SGL R7650 grades of graphite. Irradiation was performed at the Brookhaven Linear Isotope Producer. Postirradiation analyses were performed with the objective of (a) comparing their response under the postulated irradiation conditions to guide a graphite grade selection for use asmore » a pion target and (b) understanding changes in physical and mechanical properties as well as microstructure that occurred as a result of the achieved fluence and in particular at this low-temperature regime where pion graphite targets are expected to operate. A further goal of the postirradiation evaluation was to establish a proton-neutron correlation damage on graphite that will allow for the use of a wealth of available neutron-based damage data in proton-based studies and applications. Macroscopic postirradiation analyses as well as energy dispersive x-ray diffraction of 200 KeV x rays at the NSLS synchrotron of Brookhaven National Laboratory were employed. The macroscopic analyses revealed differences in the physical and strength properties of the four grades with behavior however under proton irradiation that qualitatively agrees with that reported for graphite under neutrons for the same low temperature regime and in particular the increase of thermal expansion, strength and Young’s modulus. The proton fluence level of ~10 20 cm -2 where strength reaches a maximum before it begins to decrease at higher fluences has been identified and it agrees with neutron-induced changes. X-ray diffraction analyses of the proton irradiated graphite revealed for the first time the similarity in microstructural graphite behavior to that under neutron irradiation and the agreement between the fluence threshold of ~5×10 20 cm -2 where the graphite lattice undergoes a dramatic change. The confirmed similarity in behavior and agreement in threshold fluences for proton and neutron irradiation effects on graphite reported for the first time in this study will enable the safe utilization of the wealth of neutron irradiation data on graphite that extends to much higher fluences and different temperature regimes by the proton accelerator community searching for multi-MW graphite targets.« less
Proton irradiated graphite grades for a long baseline neutrino facility experiment
Simos, N.; Nocera, P.; Zhong, Z.; ...
2017-07-24
In search of a low-Z pion production target for the Long Baseline Neutrino Facility (LBNF) of the Deep Underground Neutrino Experiment (DUNE) four graphite grades were irradiated with protons in the energy range of 140–180 MeV, to peak fluence of ~6.1×10 20 p/cm 2 and irradiation temperatures between 120–200 °C. The test array included POCO ZXF-5Q, Toyo-Tanso IG 430, Carbone-Lorraine 2020 and SGL R7650 grades of graphite. Irradiation was performed at the Brookhaven Linear Isotope Producer. Postirradiation analyses were performed with the objective of (a) comparing their response under the postulated irradiation conditions to guide a graphite grade selection for use asmore » a pion target and (b) understanding changes in physical and mechanical properties as well as microstructure that occurred as a result of the achieved fluence and in particular at this low-temperature regime where pion graphite targets are expected to operate. A further goal of the postirradiation evaluation was to establish a proton-neutron correlation damage on graphite that will allow for the use of a wealth of available neutron-based damage data in proton-based studies and applications. Macroscopic postirradiation analyses as well as energy dispersive x-ray diffraction of 200 KeV x rays at the NSLS synchrotron of Brookhaven National Laboratory were employed. The macroscopic analyses revealed differences in the physical and strength properties of the four grades with behavior however under proton irradiation that qualitatively agrees with that reported for graphite under neutrons for the same low temperature regime and in particular the increase of thermal expansion, strength and Young’s modulus. The proton fluence level of ~10 20 cm -2 where strength reaches a maximum before it begins to decrease at higher fluences has been identified and it agrees with neutron-induced changes. X-ray diffraction analyses of the proton irradiated graphite revealed for the first time the similarity in microstructural graphite behavior to that under neutron irradiation and the agreement between the fluence threshold of ~5×10 20 cm -2 where the graphite lattice undergoes a dramatic change. The confirmed similarity in behavior and agreement in threshold fluences for proton and neutron irradiation effects on graphite reported for the first time in this study will enable the safe utilization of the wealth of neutron irradiation data on graphite that extends to much higher fluences and different temperature regimes by the proton accelerator community searching for multi-MW graphite targets.« less
Liu, Wanpeng; Zhou, Zhitao; Zhang, Shaoqing; Shi, Zhifeng; Tabarini, Justin; Lee, Woonsoo; Zhang, Yeshun; Gilbert Corder, S. N.; Li, Xinxin; Dong, Fei; Cheng, Liang; Liu, Mengkun; Kaplan, David L.; Omenetto, Fiorenzo G.
2017-01-01
Precise patterning of biomaterials has widespread applications, including drug release, degradable implants, tissue engineering, and regenerative medicine. Patterning of protein‐based microstructures using UV‐photolithography has been demonstrated using protein as the resist material. The Achilles heel of existing protein‐based biophotoresists is the inevitable wide molecular weight distribution during the protein extraction/regeneration process, hindering their practical uses in the semiconductor industry where reliability and repeatability are paramount. A wafer‐scale high resolution patterning of bio‐microstructures using well‐defined silk fibroin light chain as the resist material is presented showing unprecedent performances. The lithographic and etching performance of silk fibroin light chain resists are evaluated systematically and the underlying mechanisms are thoroughly discussed. The micropatterned silk structures are tested as cellular substrates for the successful spatial guidance of fetal neural stems cells seeded on the patterned substrates. The enhanced patterning resolution, the improved etch resistance, and the inherent biocompatibility of such protein‐based photoresist provide new opportunities in fabricating large scale biocompatible functional microstructures. PMID:28932678
Amorphisation and recrystallisation study of lithium intercalation into TiO2 nano-architecture.
NASA Astrophysics Data System (ADS)
Matshaba, M. G.; Sayle, D. C.; Sayle, T. X. T.; Ngoepe, P. E.
2017-02-01
Titanium dioxide is playing an increasingly significant role in easing environmental and energy concerns. Its rich variety of polymorphic crystal structures has facilitated a wide range of applications such as photo-catalysis, photo-splitting of water, photoelectrochromic devices, insulators in metal oxide, semiconductors devices, dye sensitized solar cells (DSSCs) (energy conversions), rechargeable lithium batteries (electrochemical storage). The complex structural aspects in nano TiO2, are elucidated by microscopic visualization and quantification of the microstructure for electrode materials, since cell performance and various aging mechanisms depend strongly on the appearance and changes in the microstructure. Recent studies on MnO2 have demonstrated that amorphisation and recrystallisation simulation method can adequately generate various nanostructures, for Li-ion battery compounds. The method was also previously employed to produce nano-TiO2. In the current study, the approach is used to study lithiated nanoporous structure for TiO2 which have been extensively studied experimentally, as mentioned above. Molecular graphic images showing microstructural features, including voids and channels have accommodated lithium’s during lithiation and delithiation. Preliminary lithiation of TiO2 will be considered.
``Effect of Polyalkylthiophene Microstructure on Physical and Optoelectronic Properties''
NASA Astrophysics Data System (ADS)
Minkler, Michael J., Jr.; Beckingham, Bryan S.
Conjugated polymers have been of widespread interest as flexible semiconductors for organic electronic devices such as solar cells, field effect transistor,s and light-emitting diodes. Of particular interest have been alkyl-substituted polythiophenes due to their well-controlled synthesis, favorable optoelectronic properties, and solubility in organic solvents. Importantly, relatively small changes to the chemical microstructure in poly(3-alkylthiophenes) (P3ATs) can have a significant effect on the resulting physical and optoelectronic properties. For instance, the addition of aliphatic side chains onto unsubstituted polythiophene provides solubility but also greatly decreases conductivity in comparison to unsubstituted polythiophene (PT). In this work, we use Grignard metathesis polymerization to synthesize poly(3-hexylthiophene) (P3HT), PT, and statistical copolymers (P[3HT-co-T]) over a range of compositions. We examine the physical properties (melting temperature, crystallinity, etc) by differential scanning calorimetry and wide angle X-ray scattering, optoelectronic properties by UV/Vis spectroscopy, and solubility in organic solvents of these copolymers in order to gain insights into the interplay of microstructure and properties in this class of materials.
Study of radioactive impurities in neutron transmutation doped germanium
NASA Astrophysics Data System (ADS)
Mathimalar, S.; Dokania, N.; Singh, V.; Nanal, V.; Pillay, R. G.; Shrivastava, A.; Jagadeesan, K. C.; Thakare, S. V.
2015-02-01
A program to develop low temperature (mK) sensors with neutron transmutation doped Ge for rare event studies with a cryogenic bolometer has been initiated. For this purpose, semiconductor grade Ge wafers are irradiated with thermal neutron flux from Dhruva reactor at Bhabha Atomic Research Centre (BARC), Mumbai. Spectroscopic studies of irradiated samples have revealed that the environment of the capsule used for irradiating the sample leads to significant levels of 65Zn, 110mAg and 182Ta impurities, which can be reduced by chemical etching of approximately 50 μm thick surface layer. From measurements of the etched samples in the low background counting setup, activity due to trace impurities of 123Sb in bulk Ge is estimated to be 1 Bq / g after irradiation. These estimates indicate that in order to use the NTD Ge sensors for rare event studies, a cooldown period of 2 years would be necessary to reduce the radioactive background to ≤ 1 mBq / g.
NASA Astrophysics Data System (ADS)
Bi, Han; Sun, Qingqing; Zhao, Xuebing; You, Wenbin; Zhang, David Wei; Che, Renchao
2018-04-01
Recently, non-volatile semiconductor memory devices using a ferroelectric Hf0.5Zr0.5O2 film have been attracting extensive attention. However, at the nano-scale, the phase structure remains unclear in a thin Hf0.5Zr0.5O2 film, which stands in the way of the sustained development of ferroelectric memory nano-devices. Here, a series of electron microscopy evidences have illustrated that the interfacial strain played a key role in inducing the orthorhombic phase and the distorted tetragonal phase, which was the origin of the ferroelectricity in the Hf0.5Zr0.5O2 film. Our results provide insight into understanding the association between ferroelectric performances and microstructures of Hf0.5Zr0.5O2-based systems.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Xu, Chi; Chen, Wei-Ying; Zhang, Xuan
Microstructural changes resulted from neutron irradiation and post-irradiation annealing in a high-temperature ultra-fine precipitate strengthened (HT-UPS) stainless steel were characterized using transmission electron microscopy (TEM) and atom probe tomography (APT). Three HT-UPS samples were neutron-irradiated to 3 dpa at 500 °C, and after irradiation, two of them were annealed for 1 h at 600 °C and 700 °C, respectively. Frank dislocation loops were the dominant defect structure in both the as-irradiated and 600 °C post-irradiation-annealed (PIAed) samples, and the loop sizes and densities were similar in these two samples. Unfaulted dislocation loops were observed in the 700 °C PIAed sample, and the loop density was greatly reducedmore » in comparison with that in the as-irradiated sample. Nano-sized MX precipitates were observed under TEM in the 700 °C PIAed sample, but not in the 600 °C PIAed or the as-irradiated samples. The titanium-rich clusters were identified in all three samples using APT. The post-irradiation annealing (PIA) caused the growth of the Ti-rich clusters with a stronger effect at 700 °C than at 600 °C. The irradiation caused elemental segregations at the grain boundary and the grain interior, and the grain boundary segregation behavior is consistent with observations in other irradiated austenitic steels. APT results showed that PIA reduced the magnitude of irradiation induced segregations.« less
Ho, Hai Quan; Honda, Yuki; Motoyama, Mizuki; Hamamoto, Shimpei; Ishii, Toshiaki; Ishitsuka, Etsuo
2018-05-01
The p-type spherical silicon solar cell is a candidate for future solar energy with low fabrication cost, however, its conversion efficiency is only about 10%. The conversion efficiency of a silicon solar cell can be increased by using n-type silicon semiconductor as a substrate. This study proposed a new method of neutron transmutation doping silicon (NTD-Si) for producing the n-type spherical solar cell, in which the Si-particles are irradiated directly instead of the cylinder Si-ingot as in the conventional NTD-Si. By using a 'screw', an identical resistivity could be achieved for the Si-particles without a complicated procedure as in the NTD with Si-ingot. Also, the reactivity and neutron flux swing could be kept to a minimum because of the continuous irradiation of the Si-particles. A high temperature engineering test reactor (HTTR), which is located in Japan, was used as a reference reactor in this study. Neutronic calculations showed that the HTTR has a capability to produce about 40t/EFPY of 10Ωcm resistivity Si-particles for fabrication of the n-type spherical solar cell. Copyright © 2018 Elsevier Ltd. All rights reserved.
Benafan, O.; Garg, A.; Noebe, R. D.; ...
2015-04-20
We investigated the effect of thermomechanical cycling on a slightly Ni(Pd)-rich Ni 24.3Ti 49.7Pd 26 (near stochiometric Ni–Ti basis with Pd replacing Ni) high temperature shape memory alloy. Furthermore, aged tensile specimens (400 °C/24 h/furnace cooled) were subjected to constant-stress thermal cycling in conjunction with microstructural assessment via in situ neutron diffraction and transmission electron microscopy (TEM), before and after testing. It was shown that in spite of the slightly Ni(Pd)-rich composition and heat treatment used to precipitation harden the alloy, the material exhibited dimensional instabilities with residual strain accumulation reaching 1.5% over 10 thermomechanical cycles. This was attributed tomore » insufficient strengthening of the material (insufficient volume fraction of precipitate phase) to prevent plasticity from occurring concomitant with the martensitic transformation. In situ neutron diffraction revealed the presence of retained martensite while cycling under 300 MPa stress, which was also confirmed by transmission electron microscopy of post-cycled samples. Neutron diffraction analysis of the post-thermally-cycled samples under no-load revealed residual lattice strains in the martensite and austenite phases, remnant texture in the martensite phase, and peak broadening of the austenite phase. The texture we developed in the martensite phase was composed mainly of those martensitic tensile variants observed during thermomechanical cycling. Presence of a high density of dislocations, deformation twins, and retained martensite was revealed in the austenite state via in-situ TEM in the post-cycled material, providing an explanation for the observed peak broadening in the neutron diffraction spectra. Despite the dimensional instabilities, this alloy exhibited a biased transformation strain on the order of 3% and a two-way shape memory effect (TWSME) strain of ~2%, at relatively high actuation temperatures.« less
Multiscale Modeling and Process Optimization for Engineered Microstructural Complexity
2007-10-26
Ferroelectric Ceramics , Materials Science Forum, 404-407, 413-418 2002. 42. R. T. Brewer, H. A. Atwater Rapid biaxial texture development during...Multiscale Study of Internal Stress and Texture in Electroceramics, 106th Annual Meeting of the American Ceramic Society, Indianapolis, Indiana, 20...Rogan, Texture and Strain Analysis of PZT by In-Situ Neutron Diffraction, MRS Spring Meeting, San Francisco, CA; April 2002. 43. E. Ustundag
Microfabrication of a gadolinium-derived solid-state sensor for thermal neutrons
Achyuthan, Komandoor E.; Allen, Matthew; Denton, Michele L. B.; Siegal, Michael P.; Manginell, Ronald P.
2017-01-01
Abstract Neutron sensing is critical in civilian and military applications. Conventional neutron sensors are limited by size, weight, cost, portability and helium supply. Here the microfabrication of gadolinium (Gd) conversion material–based heterojunction diodes for detecting thermal neutrons using electrical signals produced by internal conversion electrons (ICEs) is described. Films with negligible stress were produced at the tensile-compressive crossover point, enabling Gd coatings of any desired thickness by controlling the radiofrequency sputtering power and using the zero-point near p(Ar) of 50 mTorr at 100 W. Post-deposition Gd oxidation–induced spallation was eliminated by growing a residual stress-free 50 nm neodymium-doped aluminum cap layer atop Gd. The resultant coatings were stable for at least 6 years, demonstrating excellent stability and product shelf-life. Depositing Gd directly on the diode surface eliminated the air gap, leading to a 200-fold increase in electron capture efficiency and facilitating monolithic microfabrication. The conversion electron spectrum was dominated by ICEs with energies of 72, 132 and 174 keV. Results are reported for neutron reflection and moderation by polyethylene for enhanced sensitivity, and γ- and X-ray elimination for improved specificity. The optimal Gd thickness was 10.4 μm for a 300 μm-thick partially depleted diode of 300 mm2 active surface area. Fast detection (within 10 min) at a neutron source-to-diode distance of 11.7 cm was achieved with this configuration. All ICE energies along with γ-ray and Kα,β X-rays were modeled to emphasize correlations between experiment and theory. Semi-conductor thermal neutron detectors offer advantages for field-sensing of radioactive neutron sources. PMID:28369631
Microfabrication of a gadolinium-derived solid-state sensor for thermal neutrons
DOE Office of Scientific and Technical Information (OSTI.GOV)
Pfeifer, Kent B.; Achyuthan, Komandoor E.; Allen, Matthew
Neutron sensing is critical in civilian and military applications. Conventional neutron sensors are limited by size, weight, cost, portability and helium supply. Here in this study, the microfabrication of gadolinium (Gd) conversion material–based heterojunction diodes for detecting thermal neutrons using electrical signals produced by internal conversion electrons (ICEs) is described. Films with negligible stress were produced at the tensile-compressive crossover point, enabling Gd coatings of any desired thickness by controlling the radiofrequency sputtering power and using the zero-point near p(Ar) of 50 mTorr at 100 W. Post-deposition Gd oxidation–induced spallation was eliminated by growing a residual stress-free 50 nm neodymium-dopedmore » aluminum cap layer atop Gd. The resultant coatings were stable for at least 6 years, demonstrating excellent stability and product shelf-life. Depositing Gd directly on the diode surface eliminated the air gap, leading to a 200-fold increase in electron capture efficiency and facilitating monolithic microfabrication. The conversion electron spectrum was dominated by ICEs with energies of 72, 132 and 174 keV. Results are reported for neutron reflection and moderation by polyethylene for enhanced sensitivity, and γ- and X-ray elimination for improved specificity. The optimal Gd thickness was 10.4 μm for a 300 μm-thick partially depleted diode of 300 mm 2 active surface area. Fast detection (within 10 min) at a neutron source-to-diode distance of 11.7 cm was achieved with this configuration. All ICE energies along with γ-ray and K α,β X-rays were modeled to emphasize correlations between experiment and theory. Semi-conductor thermal neutron detectors offer advantages for field-sensing of radioactive neutron sources.« less
Microfabrication of a gadolinium-derived solid-state sensor for thermal neutrons
Pfeifer, Kent B.; Achyuthan, Komandoor E.; Allen, Matthew; ...
2017-03-25
Neutron sensing is critical in civilian and military applications. Conventional neutron sensors are limited by size, weight, cost, portability and helium supply. Here in this study, the microfabrication of gadolinium (Gd) conversion material–based heterojunction diodes for detecting thermal neutrons using electrical signals produced by internal conversion electrons (ICEs) is described. Films with negligible stress were produced at the tensile-compressive crossover point, enabling Gd coatings of any desired thickness by controlling the radiofrequency sputtering power and using the zero-point near p(Ar) of 50 mTorr at 100 W. Post-deposition Gd oxidation–induced spallation was eliminated by growing a residual stress-free 50 nm neodymium-dopedmore » aluminum cap layer atop Gd. The resultant coatings were stable for at least 6 years, demonstrating excellent stability and product shelf-life. Depositing Gd directly on the diode surface eliminated the air gap, leading to a 200-fold increase in electron capture efficiency and facilitating monolithic microfabrication. The conversion electron spectrum was dominated by ICEs with energies of 72, 132 and 174 keV. Results are reported for neutron reflection and moderation by polyethylene for enhanced sensitivity, and γ- and X-ray elimination for improved specificity. The optimal Gd thickness was 10.4 μm for a 300 μm-thick partially depleted diode of 300 mm 2 active surface area. Fast detection (within 10 min) at a neutron source-to-diode distance of 11.7 cm was achieved with this configuration. All ICE energies along with γ-ray and K α,β X-rays were modeled to emphasize correlations between experiment and theory. Semi-conductor thermal neutron detectors offer advantages for field-sensing of radioactive neutron sources.« less
Silicon-Based Examination of Gamma-Ray and Neutron Interactions with Solid State Materials
2018-05-02
The objective of the research was to develop a fundamental understanding of the processes by which charge carriers interact in semiconductor...materials in order to aid in the development of advanced radiation detection materials. During the first three years of the research, our focus was primarily...the contact behavior and affect the charge transport. That information has been applied to single-crystal cadmium-zinc-telluride (CZT) and lead
NASA Astrophysics Data System (ADS)
Chauhan, A.; Bergner, F.; Etienne, A.; Aktaa, J.; de Carlan, Y.; Heintze, C.; Litvinov, D.; Hernandez-Mayoral, M.; Oñorbe, E.; Radiguet, B.; Ulbricht, A.
2017-11-01
The collaborative study is focused on the relationship between microstructure and yield stress for an ODS Fe-9%Cr-based transformable alloy and an ODS Fe-14%Cr-based ferritic alloy. The contributions to the total room temperature yield stress arising from various strengthening mechanisms are addressed on the basis of a comprehensive description of the microstructures uncovered by means of transmission electron microscopy (TEM), electron backscatter diffraction (EBSD), small-angle neutron scattering (SANS) and atom probe tomography (APT). While these methods provide a high degree of complementarity, a reasonable agreement was found in cases of overlap of information. The derived set of microstructure parameters along with reported strengthening equations was used to calculate the room temperature yield stress. The estimates were critically compared with the measured yield stress for an extended set of alloys including data reported for Fe-Cr model alloys and steels thus covering one order of magnitude or more in grain size, dislocation density, particle density and yield stress. The comparison shows that particle strengthening, dislocation forest strengthening, and Hall-Petch strengthening are the major contributions and that a mixed superposition rule reproduces the measured yield stress within experimental scatter for the whole extended set of alloys. The wide variation of microstructures additionally underpins the conclusions and goes beyond previous work, in which one or few ODS steels and narrow microstructure variations were typically covered.
Kang, Jihoon; Shin, Nayool; Jang, Do Young; Prabhu, Vivek M; Yoon, Do Y
2008-09-17
A comprehensive structural and electrical characterization of solution-processed blend films of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) semiconductor and poly(alpha-methylstyrene) (PalphaMS) insulator was performed to understand and optimize the blend semiconductor films, which are very attractive as the active layer in solution-processed organic thin-film transistors (OTFTs). Our study, based on careful measurements of specular neutron reflectivity and grazing-incidence X-ray diffraction, showed that the blends with a low molecular-mass PalphaMS exhibited a strong segregation of TIPS-pentacene only at the air interface, but surprisingly the blends with a high molecular-mass PalphaMS showed a strong segregation of TIPS-pentacene at both air and bottom substrate interfaces with high crystallinity and desired orientation. This finding led to the preparation of a TIPS-pentacene/PalphaMS blend active layer with superior performance characteristics (field-effect mobility, on/off ratio, and threshold voltage) over those of neat TIPS-pentacene, as well as the solution-processability of technologically attractive bottom-gate/bottom-contact OTFT devices.
Database on Performance of Neutron Irradiated FeCrAl Alloys
DOE Office of Scientific and Technical Information (OSTI.GOV)
Field, Kevin G.; Briggs, Samuel A.; Littrell, Ken
The present report summarizes and discusses the database on radiation tolerance for Generation I, Generation II, and commercial FeCrAl alloys. This database has been built upon mechanical testing and microstructural characterization on selected alloys irradiated within the High Flux Isotope Reactor (HFIR) at Oak Ridge National Laboratory (ORNL) up to doses of 13.8 dpa at temperatures ranging from 200°C to 550°C. The structure and performance of these irradiated alloys were characterized using advanced microstructural characterization techniques and mechanical testing. The primary objective of developing this database is to enhance the rapid development of a mechanistic understanding on the radiation tolerancemore » of FeCrAl alloys, thereby enabling informed decisions on the optimization of composition and microstructure of FeCrAl alloys for application as an accident tolerant fuel (ATF) cladding. This report is structured to provide a brief summary of critical results related to the database on radiation tolerance of FeCrAl alloys.« less
1987-08-20
contributed) A. Scherer, P. S. 0. Lin, P. Grobbe, Tp6 electron Impact Ionization from GaAs J. Harbison, L. Schiavone , Bell imntibued) quantum well...molecular beam epitaxy. 20 :’% .•% , *U.%.*. Mp 4 eVV % % Semiconductor Microcrystallites in Porous Glass and Their Applications in Optics .1%• John C. Luong...A. Scherer, P.S.D. Lin, P. Grabbe, J. Harbison, L. Schiavone .v/- Bell Communications Research Red Bank, NJ 07701 Recent advances in electron beam
1991-03-21
FIM and Ni-Cr Alloy Microstructures (Ren 9:10 D3 Research on AP-FIM and Element Distribution in Ni-Al Alloy ( Sun Jia(unclear)yan and Ren Dagang...Accumulated Si02(unclear) Thin Membrane Research (Jing J h a sun Qing) ........................ 11:30 E9 Percolation Mechanisms of Electrical...Tunnel Structures ( Sun Chengjie, Liu Kelin, and Gao Zhonglin) ............. . 48 10:10 Break 10:30 F6 Research on a New Type of Noncry-taline Semiconductor
The Deposition of Electro-Optic Films on Semiconductors
1993-10-08
Electro - optic properties of KNbO3 films on MgO are found to be similar to bulk, although the scattering losses are very high for these films. In comparison KNbO3 films grown on KTaO3 exhibit low losses of less than 8 dB, while losses for films on spinel showed to be in between those two. The variety of substrates provide us with differences in lattice mismatch, refractive index mismatch, surface morphologies, and microstructure, all of which influence loss
Martín, Jaime; Dyson, Matthew; Reid, Obadiah G.; ...
2017-12-11
Many typical organic optoelectronic devices, such as light-emitting diodes, field-effect transistors, and photovoltaic cells, use an ultrathin active layer where the organic semiconductor is confined within nanoscale dimensions. However, the question of how this spatial constraint impacts the active material is rarely addressed, although it may have a drastic influence on the phase behavior and microstructure of the active layer and hence the final performance. Here, the small-molecule semiconductor p-DTS(FBTTh 2) 2 is used as a model system to illustrate how sensitive this class of material can be to spatial confinement on device-relevant length scales. It is also shown thatmore » this effect can be exploited; it is demonstrated, for instance, that spatial confinement is an efficient tool to direct the crystal orientation and overall texture of p-DTS(FBTTh 2) 2 structures in a controlled manner, allowing for the manipulation of properties including photoluminescence and charge transport characteristics. This insight should be widely applicable as the temperature/confinement phase diagrams established via differential scanning calorimetry and grazing-incidence X-ray diffraction are used to identify specific processing routes that can be directly extrapolated to other functional organic materials, such as polymeric semiconductors, ferroelectrics or high-refractive-index polymers, to induce desired crystal textures or specific (potentially new) polymorphs.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Martín, Jaime; Dyson, Matthew; Reid, Obadiah G.
Many typical organic optoelectronic devices, such as light-emitting diodes, field-effect transistors, and photovoltaic cells, use an ultrathin active layer where the organic semiconductor is confined within nanoscale dimensions. However, the question of how this spatial constraint impacts the active material is rarely addressed, although it may have a drastic influence on the phase behavior and microstructure of the active layer and hence the final performance. Here, the small-molecule semiconductor p-DTS(FBTTh 2) 2 is used as a model system to illustrate how sensitive this class of material can be to spatial confinement on device-relevant length scales. It is also shown thatmore » this effect can be exploited; it is demonstrated, for instance, that spatial confinement is an efficient tool to direct the crystal orientation and overall texture of p-DTS(FBTTh 2) 2 structures in a controlled manner, allowing for the manipulation of properties including photoluminescence and charge transport characteristics. This insight should be widely applicable as the temperature/confinement phase diagrams established via differential scanning calorimetry and grazing-incidence X-ray diffraction are used to identify specific processing routes that can be directly extrapolated to other functional organic materials, such as polymeric semiconductors, ferroelectrics or high-refractive-index polymers, to induce desired crystal textures or specific (potentially new) polymorphs.« less
A theoretical search for supervelocity semiconductors
NASA Astrophysics Data System (ADS)
Littlejohn, M. A.; Kim, K. W.
1991-10-01
This document presents an annual report to the Office of Naval Research for a research program entitled 'A Theoretical Search for Supervelocity Semiconductors.' This program has been funded by ONR since 1974 in the Department of Electrical and Computer Engineering at N.C. State University. The research has resulted in more than 75 refereed publications and numerous conference presentations from its inception. Major contributions to the field of hot electron transport and semiconductor device modeling have been achieved, new computational methods have been developed (e.g., path integral Monte Carlo techniques), and the work has helped stimulate commercial ventures in the applications of quaternary semiconductor materials to electronic and optical devices. In addition, there have been twenty-six Ph.D. and M.S. students who have received degrees at N.C. State University with research support from this contract. Three visiting faculty members from Japan came to the university to work with the faculty investigators supported under this ONR contract during the 1979-1983 time period. A visiting professor from the French CNRS Microstructures and Microelectronics Laboratory in Bagneux (near Paris) spent a sabbatical year at N.C. State during 1988-89, and he devoted full-time working on this program at no cost to ONR. During the current funding period, a visiting scholar from China is a member of our research group working on projects which directly impact this ONR program.
Impact of nuclear transmutations on the primary damage production: The example of Ni based steels
NASA Astrophysics Data System (ADS)
Luneville, Laurence; Sublet, Jean Christphe; Simeone, David
2018-07-01
The recent nuclear evaluations describe more accurately the elastic and inelastic neutron-atoms interactions and allow calculating more realistically primary damage induced by nuclear reactions. Even if these calculations do not take into account relaxation processes occurring at the end of the displacement cascade (calculations are performed within the Binary Collision Approximation), they can accurately describe primary and recoil spectra in different reactors opening the door for simulating aging of nuclear materials with Ion Beam facilities. Since neutrons are only sensitive to isotopes, these spectra must be calculated weighting isotope spectra by the isotopic composition of materials under investigation. To highlight such a point, primary damage are calculated in pure Ni exhibiting a meta-stable isotope produced under neutron flux by inelastic neutron-isotope processes. These calculations clearly point out that the instantaneous primary damage production, the displacement per atom rate (dpa/s), responsible for the micro-structure evolution, strongly depends on the 59N i isotopic fractions closely related to the inelastic neutron isotope processes. Since the isotopic composition of the meta-stable isotope vanishes for large fluences, the long term impact of this isotope does not largely modify drastically the total dpa number in Ni based steels materials irradiate in nuclear plants.
Experimental studies of irradiated and hydrogen implantation damaged reactor steels
NASA Astrophysics Data System (ADS)
Slugeň, Vladimír; Pecko, Stanislav; Sojak, Stanislav
2016-01-01
Radiation degradation of nuclear materials can be experimentally simulated via ion implantation. In our case, German reactor pressure vessel (RPV) steels were studied by positron annihilation lifetime spectroscopy (PALS). This unique non-destructive method can be effectively applied for the evaluation of microstructural changes and for the analysis of degradation of reactor steels due to neutron irradiation and proton implantation. Studied specimens of German reactor pressure vessel steels are originally from CARINA/CARISMA program. Eight specimens were measured in as-received state and two specimens were irradiated by neutrons in German experimental reactor VAK (Versuchsatomkraftwerk Kahl) in the 1980s. One of the specimens which was in as-received and neutron irradiated condition was also used for simulation of neutron damage by hydrogen nuclei implantation. Defects with the size of about 1-2 vacancies with relatively small contribution (with intensity on the level of 20-40 %) were observed in "as-received" steels. A significant increase in the size of the induced defects due to neutron damage was observed in the irradiated specimens resulting in 2-3 vacancies. The size and intensity of defects reached a similar level as in the specimens irradiated in the nuclear reactor due to the implantation of hydrogen ions with energies of 100 keV (up to the depth <500 nm).
An integrated radiation physics computer code system.
NASA Technical Reports Server (NTRS)
Steyn, J. J.; Harris, D. W.
1972-01-01
An integrated computer code system for the semi-automatic and rapid analysis of experimental and analytic problems in gamma photon and fast neutron radiation physics is presented. Such problems as the design of optimum radiation shields and radioisotope power source configurations may be studied. The system codes allow for the unfolding of complex neutron and gamma photon experimental spectra. Monte Carlo and analytic techniques are used for the theoretical prediction of radiation transport. The system includes a multichannel pulse-height analyzer scintillation and semiconductor spectrometer coupled to an on-line digital computer with appropriate peripheral equipment. The system is geometry generalized as well as self-contained with respect to material nuclear cross sections and the determination of the spectrometer response functions. Input data may be either analytic or experimental.
Quantum propagation and confinement in 1D systems using the transfer-matrix method
NASA Astrophysics Data System (ADS)
Pujol, Olivier; Carles, Robert; Pérez, José-Philippe
2014-05-01
The aim of this article is to provide some Matlab scripts to the teaching community in quantum physics. The scripts are based on the transfer-matrix formalism and offer a very efficient and versatile tool to solve problems of a physical object (electron, proton, neutron, etc) with one-dimensional (1D) stationary potential energy. Resonant tunnelling through a multiple-barrier or confinement in wells of various shapes is particularly analysed. The results are quantitatively discussed with semiconductor heterostructures, harmonic and anharmonic molecular vibrations, or neutrons in a gravity field. Scripts and other examples (hydrogen-like ions and transmission by a smooth variation of potential energy) are available freely at http://www-loa.univ-lille1.fr/˜pujol in three languages: English, French and Spanish.
NASA Astrophysics Data System (ADS)
Facchetti, Antonio; Yoon, Myung-Han; Katz, Howard E.; Marks, Tobin J.
2003-11-01
Recent progress in the field of organic electronics is due to a fruitful combination of both innovative molecular design and promising low-cost material/device assembly. Targeting the first strategy, we present here the general synthesis of fluoroarene-containing thiophene-based semiconductors and the study of their properties with respect to the corresponding fluorine-free hole-transporting analogues. The new compounds have been characterized by elemental analysis, mass spectrometry, and 1H- and 19F NMR. The dramatic influence of fluorine substitution and molecular architecture has been investigated by solution/film optical absorption, fluorescence emission, and cyclic voltammetry. Single crystal data for all of the oligomers have been obtained and will be presented. Film microstructure and morphology of this new class of materials have been studied by XRD and SEM. Particular emphasis will be posed on the solution-processable oligomers and polymers.
A Knowledge Database on Thermal Control in Manufacturing Processes
NASA Astrophysics Data System (ADS)
Hirasawa, Shigeki; Satoh, Isao
A prototype version of a knowledge database on thermal control in manufacturing processes, specifically, molding, semiconductor manufacturing, and micro-scale manufacturing has been developed. The knowledge database has search functions for technical data, evaluated benchmark data, academic papers, and patents. The database also displays trends and future roadmaps for research topics. It has quick-calculation functions for basic design. This paper summarizes present research topics and future research on thermal control in manufacturing engineering to collate the information to the knowledge database. In the molding process, the initial mold and melt temperatures are very important parameters. In addition, thermal control is related to many semiconductor processes, and the main parameter is temperature variation in wafers. Accurate in-situ temperature measurment of wafers is important. And many technologies are being developed to manufacture micro-structures. Accordingly, the knowledge database will help further advance these technologies.
NASA Technical Reports Server (NTRS)
Okojie, Robert S.
2001-01-01
The NASA aerospace program, in particular, requires breakthrough instrumentation inside the combustion chambers of engines for the purpose of, among other things, improving computational fluid dynamics code validation and active engine behavioral control (combustion, flow, stall, and noise). This environment can be as high as 600 degrees Celsius, which is beyond the capability of silicon and gallium arsenide devices. Silicon-carbide- (SiC-) based devices appear to be the most technologically mature among wide-bandgap semiconductors with the proven capability to function at temperatures above 500 degrees Celsius. However, the contact metalization of SiC degrades severely beyond this temperature because of factors such as the interdiffusion between layers, oxidation of the contact, and compositional and microstructural changes at the metal/semiconductor interface. These mechanisms have been proven to be device killers. Very costly and weight-adding packaging schemes that include vacuum sealing are sometimes adopted as a solution.
Recycling of silicon: from industrial waste to biocompatible nanoparticles for nanomedicine
NASA Astrophysics Data System (ADS)
Kozlov, N. K.; Natashina, U. A.; Tamarov, K. P.; Gongalsky, M. B.; Solovyev, V. V.; Kudryavtsev, A. A.; Sivakov, V.; Osminkina, L. A.
2017-09-01
The formation of photoluminescent porous silicon (PSi) nanoparticles (NPs) is usually based on an expensive semiconductor grade wafers technology. Here, we report a low-cost method of PSi NPs synthesis from the industrial silicon waste remained after the wafer production. The proposed method is based on metal-assisted wet-chemical etching (MACE) of the silicon surface of cm-sized metallurgical grade silicon stones which leads to a nanostructuring of the surface due to an anisotropic etching, with subsequent ultrasound fracturing in water. The obtained PSi NPs exhibit bright red room temperature photoluminescence (PL) and demonstrate similar microstructure and physical characteristics in comparison with the nanoparticles synthesized from semiconductor grade Si wafers. PSi NPs prepared from metallurgical grade silicon stones, similar to silicon NPs synthesized from high purity silicon wafer, show low toxicity to biological objects that open the possibility of using such type of NPs in nanomedicine.
Brockway, Lance; Vasiraju, Venkata; Vaddiraju, Sreeram
2014-03-28
Recent studies indicated that nanowire format of materials is ideal for enhancing the thermoelectric performance of materials. Most of these studies were performed using individual nanowires as the test elements. It is not currently clear whether bulk assemblies of nanowires replicate this enhanced thermoelectric performance of individual nanowires. Therefore, it is imperative to understand whether enhanced thermoelectric performance exhibited by individual nanowires can be extended to bulk assemblies of nanowires. It is also imperative to know whether the addition of metal nanoparticle to semiconductor nanowires can be employed for enhancing their thermoelectric performance further. Specifically, it is important to understand the effect of microstructure and composition on the thermoelectric performance on bulk compound semiconductor nanowire-metal nanoparticle composites. In this study, bulk composites composed of mixtures of copper nanoparticles with either unfunctionalized or 1,4-benzenedithiol (BDT) functionalized Zn₃P₂ nanowires were fabricated and analyzed for their thermoelectric performance. The results indicated that use of BDT functionalized nanowires for the fabrication of composites leads to interface-engineered composites that have uniform composition all across their cross-section. The interface engineering allows for increasing their Seebeck coefficients and electrical conductivities, relative to the Zn₃P₂ nanowire pellets. In contrast, the use of unfunctionalized Zn₃P₂ nanowires for the fabrication of composite leads to the formation of composites that are non-uniform in composition across their cross-section. Ultimately, the composites were found to have Zn₃P₂ nanowires interspersed with metal alloy nanoparticles. Such non-uniform composites exhibited very high electrical conductivities, but slightly lower Seebeck coefficients, relative to Zn₃P₂ nanowire pellets. These composites were found to show a very high zT of 0.23 at 770 K, orders of magnitude higher than either interface-engineered composites or Zn₃P₂ nanowire pellets. The results indicate that microstructural composition of semiconductor nanowire-metal nanoparticle composites plays a major role in determining their thermoelectric performance, and such composites exhibit enhanced thermoelectric performance.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Mandal, Krishna
High-efficiency thermal neutron detectors with compact size, low power-rating and high spatial, temporal and energy resolution are essential to execute non-proliferation and safeguard protocols. The demands of such detector are not fully covered by the current detection system such as gas proportional counters or scintillator-photomultiplier tube combinations, which are limited by their detection efficiency, stability of response, speed of operation, and physical size. Furthermore, world-wide shortage of 3He gas, required for widely used gas detection method, has further prompted to design an alternative system. Therefore, a solid-state neutron detection system without the requirement of 3He will be very desirable. Tomore » address the above technology gap, we had proposed to develop new room temperature solidstate thermal neutron detectors based on enriched boron ( 10B) and enriched lithium ( 6Li) doped amorphous Se (As- 0.52%, Cl 5 ppm) semiconductor for MPACT applications. The proposed alloy materials have been identified for its many favorable characteristics - a wide bandgap (~2.2 eV at 300 K) for room temperature operation, high glass transition temperature (t g ~ 85°C), a high thermal neutron cross-section (for boron ~ 3840 barns, for lithium ~ 940 barns, 1 barn = 10 -24 cm 2), low effective atomic number of Se for small gamma ray sensitivity, and high radiation tolerance due to its amorphous structure.« less
NASA Technical Reports Server (NTRS)
1975-01-01
Papers are presented dealing with latest advances in the design of scintillation counters, semiconductor radiation detectors, gas and position sensitive radiation detectors, and the application of these detectors in biomedicine, satellite instrumentation, and environmental and reactor instrumentation. Some of the topics covered include entopistic scintillators, neutron spectrometry by diamond detector for nuclear radiation, the spherical drift chamber for X-ray imaging applications, CdTe detectors in radioimmunoassay analysis, CAMAC and NIM systems in the space program, a closed loop threshold calibrator for pulse height discriminators, an oriented graphite X-ray diffraction telescope, design of a continuous digital-output environmental radon monitor, and the optimization of nanosecond fission ion chambers for reactor physics. Individual items are announced in this issue.
Phonon-Mediated Exciton Stark Effect Enhanced by a Static Electric Field
NASA Astrophysics Data System (ADS)
Ivanov, A. L.
1997-03-01
The optical properties of semiconductor QW's change in the presence of coherent pump light. The exciton (phonon-mediated, biexciton-mediated, etc.) optical Stark effect is an effective shift of the exciton level that follow dynamically the intensity I0 ~= 0.1 div 1 GW/cm^2 of the pump light. In the present work we develop a theory of a low-intensity electric-field enhanced phonon-mediated optical Stark effect in polar semiconductors and semiconductor microstructures. The main point is that the exciton - LO-phonon Fröhlich interaction can be strongly enhanced by a (quasi-) static electric field F which polarizes the exciton in the geometry F | k | p, where k and p are the wavevectors of the pump and probe light, respectively. The electric field enhancement of spontaneous Raman scattering has been already analyzed (E. Burstein et al., 1971). Even a moderate electric field F ~= 10^3 V/cm reduces the intensity of the pump light to I0 ~= 1 div 10 MW/cm^2. Moreover, the phonon-mediated Stark effect enhanced by a static electric field F allow us to realize the both red and blue dynamical shifts of the exciton level.
Stable Defects in Semiconductor Nanowires.
Sanchez, A M; Gott, J A; Fonseka, H A; Zhang, Y; Liu, H; Beanland, R
2018-05-09
Semiconductor nanowires are commonly described as being defect-free due to their ability to expel mobile defects with long-range strain fields. Here, we describe previously undiscovered topologically protected line defects with null Burgers vector that, unlike dislocations, are stable in nanoscale crystals. We analyze the defects present in semiconductor nanowires in regions of imperfect crystal growth, i.e., at the nanowire tip formed during consumption of the droplet in self-catalyzed vapor-liquid-solid growth and subsequent vapor-solid shell growth. We use a form of the Burgers circuit method that can be applied to multiply twinned material without difficulty. Our observations show that the nanowire microstructure is very different from bulk material, with line defects either (a) trapped by locks or other defects, (b) arranged as dipoles or groups with a zero total Burgers vector, or (c) have a zero Burgers vector. We find two new line defects with a null Burgers vector, formed from the combination of partial dislocations in twinned material. The most common defect is the three-monolayer high twin facet with a zero Burgers vector. Studies of individual nanowires using cathodoluminescence show that optical emission is quenched in defective regions, showing that they act as strong nonradiative recombination centers.
Effects of neutron irradiation on the strength of continuous fiber reinforced SiC/SiC composites
DOE Office of Scientific and Technical Information (OSTI.GOV)
Youngblood, G.E.; Henager, C.H. Jr.; Jones, R.H.
1997-04-01
Flexural strength data as a function of irradiation temperature and dose for a SiC{sub f}/SiC composite made with Nicalon-CG fiber suggest three major degradation mechanisms. Based on an analysis of tensile strength and microstructural data for irradiated Nicalon-CG and Hi-Nicalon fibers, it is anticipated that these degradation mechanisms will be alleviated in Hi-Nicalon reinforced composites.
NASA Astrophysics Data System (ADS)
Wu, Bin; Kerkeni, Boutheïna; Egami, Takeshi; Do, Changwoo; Liu, Yun; Wang, Yongmei; Porcar, Lionel; Hong, Kunlun; Smith, Sean C.; Liu, Emily L.; Smith, Gregory S.; Chen, Wei-Ren
2012-04-01
Based on atomistic molecular dynamics (MD) simulations, the small angle neutron scattering (SANS) intensity behavior of a single generation-4 polyelectrolyte polyamidoamine starburst dendrimer is investigated at different levels of molecular protonation. The SANS form factor, P(Q), and Debye autocorrelation function, γ(r), are calculated from the equilibrium MD trajectory based on a mathematical approach proposed in this work. The consistency found in comparison against previously published experimental findings (W.-R. Chen, L. Porcar, Y. Liu, P. D. Butler, and L. J. Magid, Macromolecules 40, 5887 (2007)) leads to a link between the neutron scattering experiment and MD computation, and fresh perspectives. The simulations enable scattering calculations of not only the hydrocarbons but also the contribution from the scattering length density fluctuations caused by structured, confined water within the dendrimer. Based on our computational results, we explore the validity of using radius of gyration RG for microstructure characterization of a polyelectrolyte dendrimer from the scattering perspective.
α-Phase transformation kinetics of U – 8 wt% Mo established by in situ neutron diffraction
Garlea, Elena; Steiner, M. A.; Calhoun, C. A.; ...
2016-05-08
The α-phase transformation kinetics of as-cast U - 8 wt% Mo below the eutectoid temperature have been established by in situ neutron diffraction. α-phase weight fraction data acquired through Rietveld refinement at five different isothermal hold temperatures can be modeled accurately utilizing a simple Johnson-Mehl-Avrami-Kolmogorov impingement-based theory, and the results are validated by a corresponding evolution in the γ-phase lattice parameter during transformation that follows Vegard’s law. Neutron diffraction data is used to produce a detailed Time-Temperature-Transformation diagram that improves upon inconsistencies in the current literature, exhibiting a minimum transformation start time of 40 min at temperatures between 500 °Cmore » and 510 °C. Lastly, the transformation kinetics of U – 8 wt% Mo can vary significantly from as-cast conditions after extensive heat treatments, due to homogenization of the typical dendritic microstructure which possesses non-negligible solute segregation.« less
NASA Astrophysics Data System (ADS)
Taylor, C. N.; Shimada, M.; Merrill, B. J.; Akers, D. W.; Hatano, Y.
2015-08-01
The present work is a continuation of a recent research to develop and optimize positron annihilation spectroscopy (PAS) for characterizing neutron-irradiated tungsten. Tungsten samples were exposed to neutrons in the High Flux Isotope Reactor (HFIR) at Oak Ridge National Laboratory and damaged to 0.025 and 0.3 dpa. Subsequently, they were exposed to deuterium plasmas in the Tritium Plasma Experiment (TPE) at Idaho National Laboratory. The implanted deuterium was desorbed through sample heating to 900 °C, and Doppler broadening (DB)-PAS was performed both before and after heating. Results show that deuterium impregnated tungsten is identified as having a smaller S-parameter. The S-parameter increases after deuterium desorption. Microstructural changes also occur during sample heating. These effects can be isolated from deuterium desorption by comparing the S-parameters from the deuterium-free back face with the deuterium-implanted front face. The application of using DB-PAS to examine deuterium retention in tungsten is examined.
Shin, E J; Seong, B S; Choi, Y; Lee, J K
2011-01-01
Nano-sized multi-layers copper-doped SrZrO3, platinum (Pt) and silicon oxide (SiO2) on silicon substrates were prepared by dense plasma focus (DPF) device with the high purity copper anode tip and analyzed by using small angle neutron scattering (SANS) to establish a reliable method for the non-destructive evaluation of the under-layer structure. Thin film was well formed at the time-to-dip of 5 microsec with stable plasma of DPF. Several smooth intensity peaks were periodically observed when neutron beam penetrates the thin film with multi-layers perpendicularly. The platinum layer is dominant to intensity peaks, where the copper-doped SrZnO3 layer next to the platinum layer causes peak broadening. The silicon oxide layer has less effect on the SANS spectra due to its relative thick thickness. The SANS spectra shows thicknesses of platinum and copper-doped SrZnO3 layers as 53 and 25 nm, respectively, which are well agreement with microstructure observation.
Dislocation loop formation in model FeCrAl alloys after neutron irradiation below 1 dpa
Field, Kevin G.; Briggs, Samuel A.; Sridharan, Kumar; ...
2017-08-01
FeCrAl alloys with varying compositions and microstructures are under consideration for accident-tolerant fuel cladding, but limited details exist on dislocation loop formation and growth for this class of alloys under neutron irradiation. Four model FeCrAl alloys with chromium contents ranging from 10.01 to 17.51 wt % and alunimum contents of 4.78 to 2.93 wt % were neutron irradiated to doses of 0.3–0.8 displacements per atom (dpa) at temperatures of 335–355°C. On-zone STEM imaging revealed a mixed population of black dots and larger dislocation loops with either a/2< 111 > or a< 100 > Burgers vectors. Weak composition dependencies were observedmore » and varied depending on whether the defect size, number density, or ratio of defect types was of interest. Here, the results were found to mirror those of previous studies on FeCrAl and FeCr alloys irradiated under similar conditions, although distinct differences exist.« less
Dislocation loop formation in model FeCrAl alloys after neutron irradiation below 1 dpa
NASA Astrophysics Data System (ADS)
Field, Kevin G.; Briggs, Samuel A.; Sridharan, Kumar; Yamamoto, Yukinori; Howard, Richard H.
2017-11-01
FeCrAl alloys with varying compositions and microstructures are under consideration for accident-tolerant fuel cladding, but limited details exist on dislocation loop formation and growth for this class of alloys under neutron irradiation. Four model FeCrAl alloys with chromium contents ranging from 10.01 to 17.51 wt % and aluminum contents of 4.78 to 2.93 wt % were neutron irradiated to doses of 0.3-0.8 displacements per atom (dpa) at temperatures of 335-355 °C. On-zone STEM imaging revealed a mixed population of black dots and larger dislocation loops with either a / 2 〈 111 〉 or a 〈 100 〉 Burgers vectors. Weak composition dependencies were observed and varied depending on whether the defect size, number density, or ratio of defect types was of interest. Results were found to mirror those of previous studies on FeCrAl and FeCr alloys irradiated under similar conditions, although distinct differences exist.
Selective nucleation of iron phthalocyanine crystals on micro-structured copper iodide.
Rochford, Luke A; Ramadan, Alexandra J; Heutz, Sandrine; Jones, Tim S
2014-12-14
Morphological and structural control of organic semiconductors through structural templating is an efficient route by which to tune their physical properties. The preparation and characterisation of iron phthalocyanine (FePc)-copper iodide (CuI) bilayers at elevated substrate temperatures is presented. Thin CuI(111) layers are prepared which are composed of isolated islands rather than continuous films previously employed in device structures. Nucleation in the early stages of FePc growth is observed at the edges of islands rather than on the top (111) faces with the use of field emission scanning electron microscopy (FE-SEM). Structural measurements show two distinct polymorphs of FePc, with CuI islands edges nucleating high aspect ratio FePc crystallites with modified intermolecular spacing. By combining high substrate temperature growth and micro-structuring of the templating CuI(111) layer structural and morphological control of the organic film is demonstrated.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Huang Hui; Tan, O.K.; Lee, Y.C.
2005-10-17
SnO{sub 2} thin films were deposited by radio-frequency inductively coupled plasma-enhanced chemical vapor deposition. Postplasma treatments were used to modify the microstructure of the as-deposited SnO{sub 2} thin films. Uniform nanorods with dimension of null-set 7x100 nm were observed in the plasma-treated films. After plasma treatments, the optimal operating temperature of the plasma-treated SnO{sub 2} thin films decreased by 80 deg. C, while the gas sensitivity increased eightfold. The enhanced gas sensing properties of the plasma-treated SnO{sub 2} thin film were believed to result from the large surface-to-volume ratio of the nanorods' tiny grain size in the scale comparable tomore » the space-charge length and its unique microstructure of SnO{sub 2} nanorods rooted in SnO{sub 2} thin films.« less
NASA Astrophysics Data System (ADS)
Zhou, Yi; Hu, Xiaoyong; Gao, Wei; Song, Hanfa; Chu, Saisai; Yang, Hong; Gong, Qihuang
2018-06-01
Two-dimensional van der Waals materials are interesting for fundamental physics exploration and device applications because of their attractive physical properties. Here, we report a strategy to realize photoluminescence (PL) enhancement of two-dimensional transition-metal dichalcogenides (TMDCs) in the visible range using a plasmonic microstructure with patterned gold nanoantennas and a metal-insulator-semiconductor-insulator-metal structure. The PL intensity was enhanced by a factor of two under Y-polarization due to the increased radiative decay rate by the surface plasmon radiation channel in the gold nanoantennas and the decreased nonradiative decay rate by suppressing exciton quenching in the SiO2 isolation layer. The fluorescence lifetime of monolayer tungsten disulfide in this structure was shorter than that of a sample without patterned gold nanoantennas. Tailoring the light-matter interactions between two-dimensional TMDCs and plasmonic nanostructures may provide highly efficient optoelectronic devices such as TMDC-based light emitters.
NASA Astrophysics Data System (ADS)
Stephenson, Kale J.; Was, Gary S.
2015-01-01
The objective of this study was to compare the microstructures, microchemistry, hardening, susceptibility to IASCC initiation, and deformation behavior resulting from proton or reactor irradiation. Two commercial purity and six high purity austenitic stainless steels with various solute element additions were compared. Samples of each alloy were irradiated in the BOR-60 fast reactor at 320 °C to doses between approximately 4 and 12 dpa or by a 3.2 MeV proton beam at 360 °C to a dose of 5.5 dpa. Irradiated microstructures consisted mainly of dislocation loops, which were similar in size but lower in density after proton irradiation. Both irradiation types resulted in the formation of Ni-Si rich precipitates in a high purity alloy with added Si, but several other high purity neutron irradiated alloys showed precipitation that was not observed after proton irradiation, likely due to their higher irradiation dose. Low densities of small voids were observed in several high purity proton irradiated alloys, and even lower densities in neutron irradiated alloys, implying void nucleation was in process. Elemental segregation at grain boundaries was very similar after each irradiation type. Constant extension rate tensile experiments on the alloys in simulated light water reactor environments showed excellent agreement in terms of the relative amounts of intergranular cracking, and an analysis of localized deformation after straining showed a similar response of cracking to surface step height after both irradiation types. Overall, excellent agreement was observed after proton and reactor irradiation, providing additional evidence that proton irradiation is a useful tool for accelerated testing of irradiation effects in austenitic stainless steel.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Andrews, Madison Theresa; Bates, Cameron Russell; Mckigney, Edward Allen
Accurate detector modeling is a requirement to design systems in many non-proliferation scenarios; by determining a Detector’s Response Function (DRF) to incident radiation, it is possible characterize measurements of unknown sources. DRiFT is intended to post-process MCNP® output and create realistic detector spectra. Capabilities currently under development include the simulation of semiconductor, gas, and (as is discussed in this work) scintillator detector physics. Energy spectra and pulse shape discrimination (PSD) trends for incident photon and neutron radiation have been reproduced by DRiFT.
Characterization of a Boron Carbide Heterojunction Neutron Detector
2011-03-24
owing to a constant SRC in BC. As previously discussed, the BC is taken as fully depleted (2 μm) at all biases . The bias dependence noted in UMKC#1...sensitivity shown below 3.8 eV. A general trend also shows higher sensitivity at lower biases . For this reason, zero bias detection was not included... dependence consistent with semiconductor physics below ~ -7 V. The bias dependence that is evident in these parameters at > -7 V indicates that the
DOE Office of Scientific and Technical Information (OSTI.GOV)
Li, Meimei; Almer, Jonathan D.; Yang, Yong
2016-01-01
This report provides a summary of research activities on understanding microstructure – property correlation in reactor materials using in situ high-energy X-rays. The report is a Level 2 deliverable in FY16 (M2CA-13-IL-AN_-0403-0111), under the Work Package CA-13-IL-AN_- 0403-01, “Microstructure-Property Correlation in Reactor Materials using in situ High Energy Xrays”, as part of the DOE-NE NEET Program. The objective of this project is to demonstrate the application of in situ high energy X-ray measurements of nuclear reactor materials under thermal-mechanical loading, to understand their microstructure-property relationships. The gained knowledge is expected to enable accurate predictions of mechanical performance of these materialsmore » subjected to extreme environments, and to further facilitate development of advanced reactor materials. The report provides detailed description of the in situ X-ray Radiated Materials (iRadMat) apparatus designed to interface with a servo-hydraulic load frame at beamline 1-ID at the Advanced Photon Source. This new capability allows in situ studies of radioactive specimens subject to thermal-mechanical loading using a suite of high-energy X-ray scattering and imaging techniques. We conducted several case studies using the iRadMat to obtain a better understanding of deformation and fracture mechanisms of irradiated materials. In situ X-ray measurements on neutron-irradiated pure metal and model alloy and several representative reactor materials, e.g. pure Fe, Fe-9Cr model alloy, 316 SS, HT-UPS, and duplex cast austenitic stainless steels (CASS) CF-8 were performed under tensile loading at temperatures of 20-400°C in vacuum. A combination of wide-angle X-ray scattering (WAXS), small-angle X-ray scattering (SAXS), and imaging techniques were utilized to interrogate microstructure at different length scales in real time while the specimen was subject to thermal-mechanical loading. In addition, in situ X-ray studies were complemented and benchmarked by ex situ characterization using advanced electron microscopy, atom probe tomography (APT) and micro/nano-indentation. The report presented in situ tensile test results on neutron-irradiated pure Fe, Fe-9Cr model alloy, 316 SS and CASS CF-8. These in situ experiments demonstrate the broad applications of the new capability in understanding several outstanding issues related to irradiated materials.« less
Advances in fractal germanium micro/nanoclusters induced by gold: microstructures and properties.
Chen, Zhiwen; Shek, Chan-Hung; Wu, C M Lawrence; Lai, Joseph K L
2014-02-01
Germanium materials are a class of unique semiconductor materials with widespread technological applications because of their valuable semiconducting, electrical, optical, and thermoelectric power properties in the fields of macro/mesoscopic materials and micro/nanodevices. In this review, we describe the efforts toward understanding the microstructures and various properties of the fractal germanium micro/nanoclusters induced by gold prepared by high vacuum thermal evaporation techniques, highlighting contributions from our laboratory. First, we present the integer and non-integer dimensional germanium micro/nanoclusters such as nanoparticles, nanorings, and nanofractals induced by gold and annealing. In particular, the nonlinear electrical behavior of a gold/germanium bilayer film with the interesting nanofractal is discussed in detail. In addition, the third-order optical nonlinearities of the fractal germanium nanocrystals embedded in gold matrix will be summarized by using the sensitive and reliable Z-scan techniques aimed to determine the nonlinear absorption coefficient and nonlinear refractive index. Finally, we emphasize the thermoelectric power properties of the gold/germanium bilayer films. The thermoelectric power measurement is considered to be a more effective method than the conductivity for investigating superlocalization in a percolating system. This research may provide a novel insight to modulate their competent performance and promote rational design of micro/nanodevices. Once mastered, germanium thin films with a variety of fascinating micro/nanoclusters will offer vast and unforeseen opportunities in the semiconductor industry as well as in other fields of science and technology.
Hu, Xunxiang; Koyanagi, Takaaki; Fukuda, Makoto; ...
2016-01-01
The tungsten plasma-facing components of fusion reactors will experience an extreme environment including high temperature, intense particle fluxes of gas atoms, high-energy neutron irradiation, and significant cyclic stress loading. Irradiation-induced defect accumulation resulting in severe thermo-mechanical property degradation is expected. For this reason, and because of the lack of relevant fusion neutron sources, the fundamentals of tungsten radiation damage must be understood through coordinated mixed-spectrum fission reactor irradiation experiments and modeling. In this study, high-purity (110) single-crystal tungsten was examined by positron annihilation spectroscopy and transmission electron microscopy following low-temperature (~90 °C) and low-dose (0.006 and 0.03 dpa) mixed-spectrum neutronmore » irradiation and subsequent isochronal annealing at 400, 500, 650, 800, 1000, 1150, and 1300 °C. The results provide insights into microstructural and defect evolution, thus identifying the mechanisms of different annealing behavior. Following 1 h annealing, ex situ characterization of vacancy defects using positron lifetime spectroscopy and coincidence Doppler broadening was performed. The vacancy cluster size distributions indicated intense vacancy clustering at 400 °C with significant damage recovery around 1000 °C. Coincidence Doppler broadening measurements confirm the trend of the vacancy defect evolution, and the S–W plots indicate that only a single type of vacancy cluster is present. Furthermore, transmission electron microscopy observations at selected annealing conditions provide supplemental information on dislocation loop populations and visible void formation. This microstructural information is consistent with the measured irradiation-induced hardening at each annealing stage. This provides insight into tungsten hardening and embrittlement due to irradiation-induced matrix defects.« less
NASA Astrophysics Data System (ADS)
Seo, Joo-Young; Park, Soo-Keun; Kwon, Hoon; Cho, Ki-Sub
2017-10-01
The mechanical properties of ultra-high-strength secondary hardened stainless steels with varying Co, V, and C contents have been studied. A reduced-Co alloy based on the chemical composition of Ferrium S53 was made by increasing the V and C content. This changed the M2C-strengthened microstructure to a MC plus M2C-strengthened microstructure, and no deteriorative effects were observed for peak-aged and over-aged samples despite the large reduction in Co content from 14 to 7 wt pct. The mechanical properties according to alloying modification were associated with carbide precipitation kinetics, which was clearly outlined by combining analytical tools including small-angle neutron scattering (SANS) as well as an analytical TEM with computational simulation.
Rtimi, Sami; Pulgarin, Cesar; Nadtochenko, Victor A.; Gostev, Fedor E.; Shelaev, Ivan V.; Kiwi, John
2016-01-01
This study presents the first report addressing the effect of FeOx-TiO2 films microstructure on the transients detected by fast spectroscopy related to the long-range bacterial inactivation performance. The different fast kinetic femtosecond transient spectroscopy is reported for each FeOx+TiO2 microstructure. The lifetime of the short transient-species and the oxidative intermediate radicals generated under light were identified. Co-sputtered FeOx-TiO2 on polyethylene films presenting random distribution for both oxides were compared with sequentially sputtered FeOx/TiO2 films made up only by FeOx in the topmost layers. The ratio FeOx:TiO2 was optimized to attain the highest photo-conversion. By X-ray fluorescence, the Fe:Ti ration was found to be ~1.4 in the film bulk and by XPS-etching a ratio of 4:1 was found on the photocatalyst top-most layers. For co-sputtered FeOx-TiO2-PE films, the FeOx-TiO2 heterojunction led to electron injection from the FeOx to lower-lying TiO2 trapping states. The film optical properties, particle size, roughness, hydrophobic-hydrophilic shift and temporal evolution of the transient redox states were characterized in detail. Films with different microstructure led to different antibacterial activity. This suggests that the FeOx-TiO2-PE microstructure and not the position of the potential energy level of the semiconductors FeOx and TiO2 control the charge transfer under light irradiation. PMID:27443505
Rtimi, Sami; Pulgarin, Cesar; Nadtochenko, Victor A; Gostev, Fedor E; Shelaev, Ivan V; Kiwi, John
2016-07-22
This study presents the first report addressing the effect of FeOx-TiO2 films microstructure on the transients detected by fast spectroscopy related to the long-range bacterial inactivation performance. The different fast kinetic femtosecond transient spectroscopy is reported for each FeOx+TiO2 microstructure. The lifetime of the short transient-species and the oxidative intermediate radicals generated under light were identified. Co-sputtered FeOx-TiO2 on polyethylene films presenting random distribution for both oxides were compared with sequentially sputtered FeOx/TiO2 films made up only by FeOx in the topmost layers. The ratio FeOx:TiO2 was optimized to attain the highest photo-conversion. By X-ray fluorescence, the Fe:Ti ration was found to be ~1.4 in the film bulk and by XPS-etching a ratio of 4:1 was found on the photocatalyst top-most layers. For co-sputtered FeOx-TiO2-PE films, the FeOx-TiO2 heterojunction led to electron injection from the FeOx to lower-lying TiO2 trapping states. The film optical properties, particle size, roughness, hydrophobic-hydrophilic shift and temporal evolution of the transient redox states were characterized in detail. Films with different microstructure led to different antibacterial activity. This suggests that the FeOx-TiO2-PE microstructure and not the position of the potential energy level of the semiconductors FeOx and TiO2 control the charge transfer under light irradiation.
NASA Astrophysics Data System (ADS)
Rtimi, Sami; Pulgarin, Cesar; Nadtochenko, Victor A.; Gostev, Fedor E.; Shelaev, Ivan V.; Kiwi, John
2016-07-01
This study presents the first report addressing the effect of FeOx-TiO2 films microstructure on the transients detected by fast spectroscopy related to the long-range bacterial inactivation performance. The different fast kinetic femtosecond transient spectroscopy is reported for each FeOx+TiO2 microstructure. The lifetime of the short transient-species and the oxidative intermediate radicals generated under light were identified. Co-sputtered FeOx-TiO2 on polyethylene films presenting random distribution for both oxides were compared with sequentially sputtered FeOx/TiO2 films made up only by FeOx in the topmost layers. The ratio FeOx:TiO2 was optimized to attain the highest photo-conversion. By X-ray fluorescence, the Fe:Ti ration was found to be ~1.4 in the film bulk and by XPS-etching a ratio of 4:1 was found on the photocatalyst top-most layers. For co-sputtered FeOx-TiO2-PE films, the FeOx-TiO2 heterojunction led to electron injection from the FeOx to lower-lying TiO2 trapping states. The film optical properties, particle size, roughness, hydrophobic-hydrophilic shift and temporal evolution of the transient redox states were characterized in detail. Films with different microstructure led to different antibacterial activity. This suggests that the FeOx-TiO2-PE microstructure and not the position of the potential energy level of the semiconductors FeOx and TiO2 control the charge transfer under light irradiation.
B a2NiOs O6 : A Dirac-Mott insulator with ferromagnetism near 100 K
NASA Astrophysics Data System (ADS)
Feng, Hai L.; Calder, Stuart; Ghimire, Madhav Prasad; Yuan, Ya-Hua; Shirako, Yuichi; Tsujimoto, Yoshihiro; Matsushita, Yoshitaka; Hu, Zhiwei; Kuo, Chang-Yang; Tjeng, Liu Hao; Pi, Tun-Wen; Soo, Yun-Liang; He, Jianfeng; Tanaka, Masahiko; Katsuya, Yoshio; Richter, Manuel; Yamaura, Kazunari
2016-12-01
The ferromagnetic semiconductor B a2NiOs O6 (Tmag˜100 K ) was synthesized at 6 GPa and 1500 °C. It crystallizes into a double perovskite structure [F m -3 m ; a =8.0428 (1 )Å ], where the N i2 + and O s6 + ions are perfectly ordered at the perovskite B site. We show that the spin-orbit coupling of O s6 + plays an essential role in opening the charge gap. The magnetic state was investigated by density functional theory calculations and powder neutron diffraction. The latter revealed a collinear ferromagnetic order in a >21 kOe magnetic field at 5 K. The ferromagnetic gapped state is fundamentally different from that of known dilute magnetic semiconductors such as (Ga,Mn)As and (Cd,Mn)Te (Tmag<180 K ), the spin-gapless semiconductor M n2CoAl (Tmag˜720 K ), and the ferromagnetic insulators EuO (Tmag˜70 K ) and B i3C r3O11 (Tmag˜220 K ). It is also qualitatively different from known ferrimagnetic insulators and semiconductors, which are characterized by an antiparallel spin arrangement. Our finding of the ferromagnetic semiconductivity of B a2NiOs O6 should increase interest in the platinum group oxides, because this alternative class of materials should be useful in the development of spintronic, quantum magnetic, and related devices.
B a 2 NiOs O 6 : A Dirac-Mott insulator with ferromagnetism near 100 K
Feng, Hai L.; Calder, Stuart; Ghimire, Madhav Prasad; ...
2016-12-28
In this study, the ferromagnetic semiconductor Ba 2NiOsO 6 ( T mag ~ 100 K ) was synthesized at 6 GPa and 1500 °C. It crystallizes into a double perovskite structure [Fm - 3m ; a = 8.0428 ( 1 ) Å], where the Ni 2+ and Os 6+ ions are perfectly ordered at the perovskite B site. We show that the spin-orbit coupling of Os 6+ plays an essential role in opening the charge gap. The magnetic state was investigated by density functional theory calculations and powder neutron diffraction. The latter revealed a collinear ferromagnetic order in a >more » 21 kOe magnetic field at 5 K. The ferromagnetic gapped state is fundamentally different from that of known dilute magnetic semiconductors such as (Ga,Mn)As and (Cd,Mn)Te ( T mag < 180 K ), the spin-gapless semiconductor Mn 2 CoAl ( T mag ~ 720 K ), and the ferromagnetic insulators EuO ( T mag ~ 70 K ) and Bi 3Cr 3O 11 ( T mag ~ 220 K ). It is also qualitatively different from known ferrimagnetic insulators and semiconductors, which are characterized by an antiparallel spin arrangement. Our finding of the ferromagnetic semiconductivity of Ba 2NiOsO 6 should increase interest in the platinum group oxides, because this alternative class of materials should be useful in the development of spintronic, quantum magnetic, and related devices.« less
B a 2 NiOs O 6 : A Dirac-Mott insulator with ferromagnetism near 100 K
DOE Office of Scientific and Technical Information (OSTI.GOV)
Feng, Hai L.; Calder, Stuart; Ghimire, Madhav Prasad
In this study, the ferromagnetic semiconductor Ba 2NiOsO 6 ( T mag ~ 100 K ) was synthesized at 6 GPa and 1500 °C. It crystallizes into a double perovskite structure [Fm - 3m ; a = 8.0428 ( 1 ) Å], where the Ni 2+ and Os 6+ ions are perfectly ordered at the perovskite B site. We show that the spin-orbit coupling of Os 6+ plays an essential role in opening the charge gap. The magnetic state was investigated by density functional theory calculations and powder neutron diffraction. The latter revealed a collinear ferromagnetic order in a >more » 21 kOe magnetic field at 5 K. The ferromagnetic gapped state is fundamentally different from that of known dilute magnetic semiconductors such as (Ga,Mn)As and (Cd,Mn)Te ( T mag < 180 K ), the spin-gapless semiconductor Mn 2 CoAl ( T mag ~ 720 K ), and the ferromagnetic insulators EuO ( T mag ~ 70 K ) and Bi 3Cr 3O 11 ( T mag ~ 220 K ). It is also qualitatively different from known ferrimagnetic insulators and semiconductors, which are characterized by an antiparallel spin arrangement. Our finding of the ferromagnetic semiconductivity of Ba 2NiOsO 6 should increase interest in the platinum group oxides, because this alternative class of materials should be useful in the development of spintronic, quantum magnetic, and related devices.« less
NASA Astrophysics Data System (ADS)
Hubert, G.; Federico, C. A.; Pazianotto, M. T.; Gonzales, O. L.
2016-02-01
In this paper are described the ACROPOL and OPD high-altitude stations devoted to characterize the atmospheric radiation fields. The ACROPOL platform, located at the summit of the Pic du Midi in the French Pyrenees at 2885 m above sea level, exploits since May 2011 some scientific equipment, including a BSS neutron spectrometer, detectors based on semiconductor and scintillators. In the framework of a IEAv and ONERA collaboration, a second neutron spectrometer was simultaneously exploited since February 2015 at the summit of the Pico dos Dias in Brazil at 1864 m above the sea level. The both high station platforms allow for investigating the long period dynamics to analyze the spectral variation of cosmic-ray- induced neutron and effects of local and seasonal changes, but also the short term dynamics during solar flare events. This paper presents long and short-term analyses, including measurement and modeling investigations considering the both high altitude stations data. The modeling approach, based on ATMORAD computational platform, was used to link the both station measurements.
Nuclear-Recoil Energy Scale in CDMS II Silicon Dark-Matter Detectors
DOE Office of Scientific and Technical Information (OSTI.GOV)
Agnese, R.; et al.
The Cryogenic Dark Matter Search (CDMS II) experiment aims to detect dark matter particles that elastically scatter from nuclei in semiconductor detectors. The resulting nuclear-recoil energy depositions are detected by ionization and phonon sensors. Neutrons produce a similar spectrum of low-energy nuclear recoils in such detectors, while most other backgrounds produce electron recoils. The absolute energy scale for nuclear recoils is necessary to interpret results correctly. The energy scale can be determined in CDMS II silicon detectors using neutrons incident from a broad-spectrummore » $$^{252}$$Cf source, taking advantage of a prominent resonance in the neutron elastic scattering cross section of silicon at a recoil (neutron) energy near 20 (182) keV. Results indicate that the phonon collection efficiency for nuclear recoils is $$4.8^{+0.7}_{-0.9}$$% lower than for electron recoils of the same energy. Comparisons of the ionization signals for nuclear recoils to those measured previously by other groups at higher electric fields indicate that the ionization collection efficiency for CDMS II silicon detectors operated at $$\\sim$$4 V/cm is consistent with 100% for nuclear recoils below 20 keV and gradually decreases for larger energies to $$\\sim$$75% at 100 keV. The impact of these measurements on previously published CDMS II silicon results is small.« less
NASA Astrophysics Data System (ADS)
Ryzhikov, Vladimir D.; Burachas, S. F.; Volkov, V. G.; Danshin, Evgeniy A.; Lisetskaya, Elena K.; Piven, L. A.; Svishch, Vladimir M.; Chernikov, Vyacheslav V.; Filimonov, A. E.
1997-02-01
After the Chernobyl catastrophe among the problems of current concern a question arose of detection of 'hot' particles formed from plutonium alloys with carbon, nitrogen, silicon, etc. For this purpose, the instruments are needed, which would be able to detect not only alpha- particles and low energy gamma-radiation, but also neutrons and high energy gamma-quanta from ((alpha) , n(gamma) ) - reactions. At present for each kind of radiation detectors of different types are used. A general drawback of all these instruments is their narrow dynamic range of dose rates and energies, and especially impossibility to registrate n-flux in condition large background activity gamma-rays nuclei, which makes each of them applicable only under certain specific conditions. For detection of 'hot' particles, oxide and semiconductor scintillators were used, which contained elements with large capture cross section for thermal neutrons. In this paper we try to determine possibilities and limitations of solid-state neutron detectors based on CdS(Te), ZnSe(Te), CdWO4 (CWO), Gd2SiO5 (GSO) scintillators developed and produced by the Science and Technology Center for Radiation Instruments of the Institute for Single Crystals. The instruments developed by Center are based preferable on a very promising system 'scintillator- photodiode-preamplifier' matched with modern computer data processing techniques.
Guilbert, Anne A Y; Zbiri, Mohamed; Jenart, Maud V C; Nielsen, Christian B; Nelson, Jenny
2016-06-16
The molecular dynamics of organic semiconductor blend layers are likely to affect the optoelectronic properties and the performance of devices such as solar cells. We study the dynamics (5-50 ps) of the poly(3-hexylthiophene) (P3HT): phenyl-C61-butyric acid methyl ester (PCBM) blend by time-of-flight quasi-elastic neutron scattering, at temperatures in the range 250-360 K, thus spanning the glass transition temperature region of the polymer and the operation temperature of an OPV device. The behavior of the QENS signal provides evidence for the vitrification of P3HT upon blending, especially above the glass transition temperature, and the plasticization of PCBM by P3HT, both dynamics occurring on the picosecond time scale.
Trace impurities analysis determined by neutron activation in the PbI 2 crystal semiconductor
NASA Astrophysics Data System (ADS)
Hamada, M. M.; Oliveira, I. B.; Armelin, M. J.; Mesquita, C. H.
2003-06-01
In this work, a methodology for impurity analysis of PbI 2 was studied to investigate the effectiveness of the purification. Commercial salts were purified by the multi passes zone refining and grown by the Bridgman method. To evaluate the purification efficiency, samples from the bottom, middle and upper sections of the ZR ingot were analyzed after 200, 300 and 500 purification passes, by measurements of the impurity concentrations, using the neutron activation analysis (NAA) technique. There was a significant reduction of the impurities according to the purification numbers. The reduction efficiency was different for each element, namely: Au>Mn>Co˜Ag>K˜Br. The impurity concentration of the crystals grown after 200, 300 and 500 passes and the PbI 2 starting material were analyzed by NAA and plasma optical emission spectroscopy.
Synthesis and characterization of Ca-doped LaMnAsO
NASA Astrophysics Data System (ADS)
Liu, Yong; Straszheim, Warren E.; Das, Pinaki; Islam, Farhan; Heitmann, Thomas W.; McQueeney, Robert J.; Vaknin, David
2018-05-01
We report on our attempt to hole-dope the antiferromagnetic semiconductor LaMnAsO by substitution of the La3 + site by Ca2 +. We use neutron and x-ray diffraction, magnetic susceptibility, and transport techniques to characterize polycrystalline (La1 -xCax)MnAsO samples prepared by solid-state reaction and find that the parent compound is highly resistant to substitution with an upper limit x ≤0.01 . Magnetic susceptibility of the parent and the x =0.002 (xnom=0.04 ) compounds indicate a negligible presence of magnetic impurities (i.e., MnO or MnAs). Rietveld analysis of neutron and x-ray diffraction data shows the preservation of both the tetragonal (P 4 /n m m ) structure upon doping and the antiferromagnetic ordering temperature, TN=355 ±5 K.
NASA Astrophysics Data System (ADS)
Calabrese, Michelle A.
Surfactant wormlike micelles (WLMs) are of particular scientific interest due to their ability to branch, break, and reform under shear, which can lead to shear banding flow instabilities. The tunable self-assembly of WLMs makes them ubiquitous in applications ranging from consumer products to energy recovery fluids. Altering the topology of WLMs by inducing branching provides a microstructural pathway to design and optimize the flow properties for such targeted applications. The goal of this thesis is to understand the role of micellar branching on the resulting equilibrium and non-equilibrium properties, while advancing instrumentation and analysis methods in rheology and neutron scattering. The degree of branching in the mixed cationic/anionic surfactant solutions is controlled by the addition of sodium tosylate. The equilibrium properties are characterized via small angle neutron scattering (SANS), linear viscoelastic rheology, neutron spin echo, and dynamic light scattering. Combining rheology with spatiotemporally-resolved SANS enables unambiguous identification of non-equilibrium rheological and scattering signatures of branching and shear banding. The nonlinear WLM response is characterized via flow-SANS under steady shear, shear startup, and large amplitude oscillatory shear. New methods of time-resolved data analysis are developed, which improve experimental resolution by several-fold. Shear-induced orientation is a complex function of branching level, radial position, and deformation type. The structural mechanisms behind shear band formation are elucidated for steady and dynamic flows, which depend on branching level. Shear banding disappears at high branching levels for all deformation types. These responses are used to validate constitutive modeling predictions of dynamic shear banding for the first time. Finally, quantitative metrics to predict shear banding from rheology or flow-induced orientation are developed. Together, advanced rheological and neutron techniques provide a platform for creating structure-property relationships that predict flow and structural phenomena in WLMs and other soft materials. These methods have enabled characteristic differences in linear versus branched WLMs to be determined. This research is part of a broader effort to characterize branching in polymers and self-assembled systems, and may aid in the formulation of WLMs for specific applications. Finally, this work provides a basis for testing and developing microstructure-based constitutive equations that incorporate micellar breakage and branching.
Panidi, Julianna; Paterson, Alexandra F; Khim, Dongyoon; Fei, Zhuping; Han, Yang; Tsetseris, Leonidas; Vourlias, George; Patsalas, Panos A; Heeney, Martin; Anthopoulos, Thomas D
2018-01-01
Improving the charge carrier mobility of solution-processable organic semiconductors is critical for the development of advanced organic thin-film transistors and their application in the emerging sector of printed electronics. Here, a simple method is reported for enhancing the hole mobility in a wide range of organic semiconductors, including small-molecules, polymers, and small-molecule:polymer blends, with the latter systems exhibiting the highest mobility. The method is simple and relies on admixing of the molecular Lewis acid B(C 6 F 5 ) 3 in the semiconductor formulation prior to solution deposition. Two prototypical semiconductors where B(C 6 F 5 ) 3 is shown to have a remarkable impact are the blends of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene:poly(triarylamine) (diF-TESADT:PTAA) and 2,7-dioctyl[1]-benzothieno[3,2-b][1]benzothiophene:poly(indacenodithiophene-co-benzothiadiazole) (C8-BTBT:C16-IDTBT), for which hole mobilities of 8 and 11 cm 2 V -1 s -1 , respectively, are obtained. Doping of the 6,13-bis(triisopropylsilylethynyl)pentacene:PTAA blend with B(C 6 F 5 ) 3 is also shown to increase the maximum hole mobility to 3.7 cm 2 V -1 s -1 . Analysis of the single and multicomponent materials reveals that B(C 6 F 5 ) 3 plays a dual role, first acting as an efficient p-dopant, and secondly as a microstructure modifier. Semiconductors that undergo simultaneous p-doping and dopant-induced long-range crystallization are found to consistently outperform transistors based on the pristine materials. Our work underscores Lewis acid doping as a generic strategy towards high performance printed organic microelectronics.
Center for Dielectric Studies at the Pennsylvania State University,
1983-05-01
microstructure. The permittivity shows a weak peak near 100K which also has clear relaxation character and closely duplicates the behavior of higA purity...departures from the expected Curie-Weiss made by Demurov and Venevtsev.1 both hysteresis loops in P(E) behavior . Clearly. from the frequency response and...dielectric measurements, an powderl had second phase KzTa.O,,; powder II was completely anomalous behavior was observed by inelastic neutron scattering
Determination of very low concentrations of hydrogen in zirconium alloys by neutron imaging
NASA Astrophysics Data System (ADS)
Buitrago, N. L.; Santisteban, J. R.; Tartaglione, A.; Marín, J.; Barrow, L.; Daymond, M. R.; Schulz, M.; Grosse, M.; Tremsin, A.; Lehmann, E.; Kaestner, A.; Kelleher, J.; Kabra, S.
2018-05-01
Zr-based alloys are used in nuclear power plants because of a unique combination of very low neutron absorption and excellent mechanical properties and corrosion resistance at operating conditions. However, Hydrogen (H) or Deuterium ingress due to waterside corrosion during operation can embrittle these materials. In particular, Zr alloys are affected by Delayed Hydride Cracking (DHC), a stress-corrosion cracking mechanism operating at very low H content (∼100-300 wt ppm), which involves the diffusion of H to the crack tip. H content in Zr alloys is commonly determined by destructive techniques such as inert gas fusion and vacuum extraction. In this work, we have used neutron imaging to non-destructively quantify the spatial distribution of H in Zr alloys specimens with a resolution of ∼5 wt ppm, an accuracy of ∼10 wt ppm and a spatial resolution of ∼25 μm × 5 mm x 10 mm. Non-destructive experiments performed on a comprehensive set of calibrated specimens of Zircaloy-2 and Zr2.5%Nb at four neutron facilities worldwide show the typical precision and repeatability of the technique. We have observed that the microstructure of the alloy plays an important role on the homogeneity of H across a specimen. We propose several strategies for performing H determinations without calibrated specimens, with the most precise results for neutrons having wavelengths longer than 5.7 Å.
Type I and type II residual stress in iron meteorites determined by neutron diffraction measurements
NASA Astrophysics Data System (ADS)
Caporali, Stefano; Pratesi, Giovanni; Kabra, Saurabh; Grazzi, Francesco
2018-04-01
In this work we present a preliminary investigation by means of neutron diffraction experiment to determine the residual stress state in three different iron meteorites (Chinga, Sikhote Alin and Nantan). Because of the very peculiar microstructural characteristic of this class of samples, all the systematic effects related to the measuring procedure - such as crystallite size and composition - were taken into account and a clear differentiation in the statistical distribution of residual stress in coarse and fine grained meteorites were highlighted. Moreover, the residual stress state was statistically analysed in three orthogonal directions finding evidence of the existence of both type I and type II residual stress components. Finally, the application of von Mises approach allowed to determine the distribution of type II stress.
Exploring Hominin and Non-hominin Primate Dental Fossil Remains with Neutron Microtomography
NASA Astrophysics Data System (ADS)
Zanolli, Clément; Schillinger, Burkhard; Beaudet, Amélie; Kullmer, Ottmar; Macchiarelli, Roberto; Mancini, Lucia; Schrenk, Friedemann; Tuniz, Claudio; Vodopivec, Vladimira
Fossil dental remains are an archive of unique information for paleobiological studies. Computed microtomography based on X-ray microfocus sources (X-μCT) and Synchrotron Radiation (SR-μCT) allow subtle quantification at the micron and sub-micron scale of the meso- and microstructural signature imprinted in the mineralized tissues, such as enamel and dentine, through high-resolution ;virtual histology;. Nonetheless, depending on the degree of alterations undergone during fossilization, X-ray analyses of tooth tissues do not always provide distinct imaging contrasts, thus preventing the extraction of essential morphological and anatomical details. We illustrate here by three examples the successful application of neutron microtomography (n-μCT) in cases where X-rays have previously failed to deliver contrasts between dental tissues of fossilized specimen.
Synergies Between ' and Cavity Formation in HT-9 Following High Dose Neutron Irradiation
DOE Office of Scientific and Technical Information (OSTI.GOV)
Field, Kevin G.; Parish, Chad M.; Saleh, Tarik A.
Candidate cladding materials for advanced nuclear power reactors including fast reactor designs require materials capable of withstanding high dose neutron irradiation at elevated temperatures. One candidate material, HT-9, through various research programs have demonstrated the ability to withstand significant swelling and other radiation-induced degradation mechanisms in the high dose regime (>50 displacements per atom, dpa) at elevated temperatures (>300 C). Here, high efficiency multi-dimensional scanning transmission electron microscopy (STEM) acquisition with the aid of a three-dimensional (3D) reconstruction and modeling technique is used to probe the microstructural features that contribute to the exceptional swelling resistance of HT-9. In particular, themore » synergies between ' and fine-scale and moderate-scale cavity formation is investigated.« less
Change of magnetic properties of nanocrystalline alloys under influence of external factors
NASA Astrophysics Data System (ADS)
Sitek, Jozef; Holková, Dominika; Dekan, Julius; Novák, Patrik
2016-10-01
Nanocrystalline (Fe3Ni1)81Nb7B12 alloys were irradiated using different types of radiation and subsequently studied by Mössbauer spectroscopy. External magnetic field of 0.5 T, electron-beam irradiation up to 4 MGy, neutron irradiation up to 1017 neutrons/cm2 and irradiation with Cu ions were applied on the samples. All types of external factors had an influence on the magnetic microstructure manifested as a change in the direction of the net magnetic moment, intensity of the internal magnetic field and volumetric fraction of the constituent phases. The direction of the net magnetic moment was the most sensitive parameter. Changes of the microscopic magnetic parameters were compared after different external influence and results of nanocrystalline samples were compared with their amorphous precursors.
Semiconductor laser irradiation improves root canal sealing during routine root canal therapy
Hu, Xingxue; Wang, Dashan; Cui, Ting; Yao, Ruyong
2017-01-01
Objective To evaluate the effect of semiconductor laser irradiation on root canal sealing after routine root canal therapy (RCT). Methods Sixty freshly extracted single-rooted human teeth were randomly divided into six groups (n = 10). The anatomic crowns were sectioned at the cementoenamel junction and the remaining roots were prepared endodontically with conventional RCT methods. Groups A and B were irradiated with semiconductor laser at 1W for 20 seconds; Groups C and D were ultrasonically rinsed for 60 seconds as positive control groups; Groups E and F without treatment of root canal prior to RCT as negative control groups. Root canal sealing of Groups A, C and E were evaluated by measurements of apical microleakage. The teeth from Groups B, D and F were sectioned, and the micro-structures were examined with scanning electron microscopy (SEM). One way ANOVA and LSD-t test were used for statistical analysis (α = .05). Results The apical sealing of both the laser irradiated group and the ultrasonic irrigated group were significantly different from the control group (p<0.5). There was no significant difference between the laser irradiated group and the ultrasonic irrigated group (p>0.5). SEM observation showed that most of the dentinal tubules in the laser irradiation group melted, narrowed or closed, while most of the dentinal tubules in the ultrasonic irrigation group were filled with tooth paste. Conclusion The application of semiconductor laser prior to root canal obturation increases the apical sealing of the roots treated. PMID:28957407
Evaluation of Hydrothermally Synthesized Uranium Dioxide for Novel Semiconductor Applications
2016-08-29
after [25]. ..........................30 Figure 11. The critical point of water is 647 K (374 ⁰C, 705 ⁰F) and 218 atm (22.064 MPa, 3200 psia...friends, and colleagues without whom I would not have been able to gather and analyze the data critical to this research. I owe a great deal to the...nuclides of Pu are difficult to separate, any fraction of Pu-240 in a Pu mass will enhance neutron emission. Table 1. The primary decay modes, half
Bibliography of Soviet Laser Developments, Number 48 July-August 1980.
1981-07-01
equilibrium and thermodvnamic properties of alloys of erbium with tellurium in the solid state. Moskovskiv Cli. Vestnik. Khimiva, no. 4, 1980, 339-344. 3...processes in a gamma laser. Sb 12, 147-163. (RZhF, 7/80, 7DI140) 292. Vysotskiy, V.I., and R.N. Kuz’min (51,2). Focusing and channeling of neutrons and...metal-nitride- oxide - semiconductor structure and a laser CRT. KE, no. 7, 1980, 1585-1588. 55 359. Soroka, S.1., and S.I. Ratnikov (0). Hologram
Local atomic and magnetic structure of dilute magnetic semiconductor (Ba ,K ) (Zn,Mn ) 2As2
NASA Astrophysics Data System (ADS)
Frandsen, Benjamin A.; Gong, Zizhou; Terban, Maxwell W.; Banerjee, Soham; Chen, Bijuan; Jin, Changqing; Feygenson, Mikhail; Uemura, Yasutomo J.; Billinge, Simon J. L.
2016-09-01
We have studied the atomic and magnetic structure of the dilute ferromagnetic semiconductor system (Ba ,K )(Zn ,Mn )2As2 through atomic and magnetic pair distribution function analysis of temperature-dependent x-ray and neutron total scattering data. We detected a change in curvature of the temperature-dependent unit cell volume of the average tetragonal crystallographic structure at a temperature coinciding with the onset of ferromagnetic order. We also observed the existence of a well-defined local orthorhombic structure on a short length scale of ≲5 Å , resulting in a rather asymmetrical local environment of the Mn and As ions. Finally, the magnetic PDF revealed ferromagnetic alignment of Mn spins along the crystallographic c axis, with robust nearest-neighbor ferromagnetic correlations that exist even above the ferromagnetic ordering temperature. We discuss these results in the context of other experiments and theoretical studies on this system.
NASA Astrophysics Data System (ADS)
Fischer, R. P.; Grun, J.; Ting, A.; Felix, C.; Peckerar, M.; Fatemi, M.; Manka, C. K.
1999-11-01
Current semiconductor annealing methods are based on thermal processes which are accompanied by diffusion that degrades the definition of device features or causes other problems. This will be a serious obstacle for the production of next-generation ultra-high density, low power semiconductor devices. Experiments underway at NRL utilize a new annealing method which is much faster than thermal annealing and does not depend upon thermal energy (J. Grun, et al)., Phys. Rev. Letters 78, 1584 (1997).. A 10 J, 30 nsec, 1.053 nm wavelength laser pulse is focussed to approximately 1 mm diameter on a silicon sample. Acoustic and shock waves propagate from the impact region, which deposit mechanical energy into the material and anneal the silicon. Experimental results will be presented on annealing neutron-transmutation-doped (NTD) and ion implanted silicon samples with impurity concentrations from 1 × 10^15-3 × 10^20/cm^3.
Improved scintillation detector performance via a method of enhanced layered coatings
Wakeford, Daniel Tyler; Tornga, Shawn Robert; Adams, Jillian Cathleen; ...
2016-11-16
Increasing demand for better detection performance with a simultaneous reduction in size, weight and power consumption has motivated the use of compact semiconductors as photo-converters for many gamma-ray and neutron scintillators. The spectral response of devices such as silicon avalanche photodiodes (APDs) is poorly matched to many common high-performance scintillators. We have developed a generalized analytical method that utilizes an optical reference database to match scintillator luminescence to the excitation spectrum of high quantum efficiency semiconductor detectors. This is accomplished by the fabrication and application of a series of high quantum yield, short fluorescence lifetime, wavelengthshifting coatings. Furthermore, we showmore » here a 22% increase in photoelectron collection and a 10% improvement in energy resolution when applying a layered coating to an APD-coupled, cerium-doped, yttrium oxyorthosilicate (YSO:Ce) scintillator. Wavelength-shifted radioluminescence emission and rise time analysis are also discussed.« less
One-dimensional ZnO nanostructures.
Jayadevan, K P; Tseng, T Y
2012-06-01
The wide-gap semiconductor ZnO with nanostructures such as nanoparticle, nanorod, nanowire, nanobelt, nanotube has high potential for a variety of applications. This article reviews the fundamentals of one-dimensional ZnO nanostructures, including processing, structure, property, application and their processing-microstructure-property correlation. Various fabrication methods of the ZnO nanostructures including vapor-liquid-solid process, vapor-solid growth, solution growth, solvothermal growth, template-assisted growth and self-assembly are introduced. The characterization and properties of the ZnO nanostructures are described. The possible applications of these nanostructures are also discussed.
Sun, Lin; Galvin, Deri Rhys; Hill, Paul; Rawson, Martin; Gilbert, Elliot Paul; Bhadeshia, Harshad; Perkins, Karen
2017-01-01
Maraging steels gain many of their beneficial properties from heat treatments which induce the precipitation of intermetallic compounds. We consider here a two-stage heat-treatment, first involving austenitisation, followed by quenching to produce martensite and then an ageing treatment at a lower temperature to precipitation harden the martensite of a maraging steel. It is shown that with a suitable choice of the initial austenitisation temperature, the steel can be heat treated to produce enhanced toughness, strength and creep resistance. A combination of small angle neutron scattering, scanning electron microscopy, electron back-scattered diffraction, and atom probe tomography were used to relate the microstructural changes to mechanical properties. It is shown that such a combination of characterisation methods is necessary to quantify this complex alloy, and relate these microstructural changes to mechanical properties. It is concluded that a higher austenitisation temperature leads to a greater volume fraction of smaller Laves phase precipitates formed during ageing, which increase the strength and creep resistance but reduces toughness. PMID:29168800
Investigation of dissimilar metal welds by energy-resolved neutron imaging.
Tremsin, Anton S; Ganguly, Supriyo; Meco, Sonia M; Pardal, Goncalo R; Shinohara, Takenao; Feller, W Bruce
2016-08-01
A nondestructive study of the internal structure and compositional gradient of dissimilar metal-alloy welds through energy-resolved neutron imaging is described in this paper. The ability of neutrons to penetrate thick metal objects (up to several cm) provides a unique possibility to examine samples which are opaque to other conventional techniques. The presence of Bragg edges in the measured neutron transmission spectra can be used to characterize the internal residual strain within the samples and some microstructural features, e.g. texture within the grains, while neutron resonance absorption provides the possibility to map the degree of uniformity in mixing of the participating alloys and intermetallic formation within the welds. In addition, voids and other defects can be revealed by the variation of neutron attenuation across the samples. This paper demonstrates the potential of neutron energy-resolved imaging to measure all these characteristics simultaneously in a single experiment with sub-mm spatial resolution. Two dissimilar alloy welds are used in this study: Al autogenously laser welded to steel, and Ti gas metal arc welded (GMAW) to stainless steel using Cu as a filler alloy. The cold metal transfer variant of the GMAW process was used in joining the Ti to the stainless steel in order to minimize the heat input. The distributions of the lattice parameter and texture variation in these welds as well as the presence of voids and defects in the melt region are mapped across the welds. The depth of the thermal front in the Al-steel weld is clearly resolved and could be used to optimize the welding process. A highly textured structure is revealed in the Ti to stainless steel joint where copper was used as a filler wire. The limited diffusion of Ti into the weld region is also verified by the resonance absorption.
Neutron Characterization of Additively Manufactured Components. Workshop Report
DOE Office of Scientific and Technical Information (OSTI.GOV)
Watkins, Thomas R.; Payzant, E. Andrew; Babu, Sudarsanam Suresh
2015-09-01
Additive manufacturing (AM) is a collection of promising manufacturing methods that industry is beginning to explore and adopt. Macroscopically complicated and near net shape components are being built using AM, but how the material behaves in service is a big question for industry. Consequently, AM components/materials need further research into exactly what is made and how it will behave in service. This one and a half day workshop included a series of invited presentations from academia, industry and national laboratories (see Appendix A for the workshop agenda and list of talks). The workshop was welcomed by Alan Tennant, Chief Scientist,more » Neutron Sciences Directorate, ORNL, and opened remotely by Rob Ivestor, Deputy Director, Advanced Manufacturing Office-DOE, who declared AM adoptees as titans who will be able to create customized 3-D structures with 1 million to 1 billion micro welds with locally tailored microstructures. Further he stated that characterization with neutrons is key to be able to bring critical insight/information into the AM process/property/behavior relationship. Subsequently, the presentations spanned a slice of the current state of the art AM techniques and many of the most relevant characterization techniques using neutrons. After the talks, a panel discussion was held; workshop participants (see Appendix B for a list of attendees) providing questions and the panel answers. The main purpose of the panel discussion was to build consensus regarding the critical research needs in AM that can be addressed with neutrons. These needs were placed into three categories: modes of access for neutrons, new capabilities needed, new AM material issues and neutrons. Recommendations from the workshop were determined based on the panel discussion.« less
Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating.
Rickey, Kelly M; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S Venkataprasad; Wu, Yue; Cheng, Gary J; Ruan, Xiulin
2015-11-03
We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~10(5) Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films.
Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating
Rickey, Kelly M.; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S. Venkataprasad; Wu, Yue; Cheng, Gary J.; Ruan, Xiulin
2015-01-01
We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~105 Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films. PMID:26527570
A developed Ullmann reaction to III-V semiconductor nanocrystals in sealed vacuum tubes.
Wang, Junli; Yang, Qing
2008-11-21
Group III-V (13-15, III = Ga, In, and V = P, As) semiconductor nanocrystals were effectively obtained via a developed Ullmann reaction route through the reactions of preformed nanoscale metallic indium or commercial gallium with triphenylphosphine (PPh(3)) and triphenylarsine (AsPh(3)) in sealed vacuum quartz tubes under moderate conditions at 320-400 degrees C for 8-24 h. The developed synthetic strategy in sealed vacuum tubes extends the synthesis of III-V semiconductor materials, and the air-stable PPh(3) and AsPh(3) with low toxicity provide good alternative pnicogen precursors for the synthesis of III-V nanocrystals. The analysis of XRD, ED and HRTEM established the production of one-dimensional (1D) metastable wurtzite (W) InP, InAs and GaP nanostructures in the zinc blende (ZB) products. Further investigations showed that 1D W nanostructures resulted from kinetic effects under the moderate synthetic conditions employed and the steric effect of PPh(3) and AsPh(3), and that the tendency for the synthesis of III-V nanocrystals was in the orders of IIIP > IIIAs and GaV > InV on the basis of experiments and thermodynamic calculations. Meanwhile, the microstructures and growth mechanism of the III-V nanocrystals were investigated.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Liang, J. W.; Shen, Y. F.; Zhang, C. S.
Here, the microstructures and mechanical properties of a low-alloy medium-carbon steel with a duplex microstructure composed of nanoscale spheroidized carbides in ultrafine-grained (UFG) ferritic steel are examined. The average grain size of the studied steel is ~ 430 nm, and these grains coexist with numerous carbides. Neutron diffraction reveals that the intensity of (011) and (022) peaks for the UFG sample is significantly enhanced, suggesting that the (011)//RD texture is a result of the warm rolling process. The lattice parameter of UFG steel is smaller than that of a martensitic steel (M steel) counterpart, indicating a lower carbon concentration inmore » the lattice. The estimated dislocation densities for M steel and UFG steel are 2.59 × 10 14 cm –2 and 1.76 × 10 12 cm –2, respectively. The UFG steel reveals a nearly isotropic lattice strain response under initial tension from 0 to 450 MPa, where the lattice strains of the (110), (002), and (112) planes are identical. The increase of lattice strain of the (110) plane becomes smaller than that of the (002) and (112) planes as the stress exceeds 450 MPa, suggesting that the nanosized carbides contribute to the hardening ability by promoting the accumulation of geometrically necessary dislocations around the particles, and the (110) lattice becomes harder compared to the other two planes.« less
Liang, J. W.; Shen, Y. F.; Zhang, C. S.; ...
2018-04-25
Here, the microstructures and mechanical properties of a low-alloy medium-carbon steel with a duplex microstructure composed of nanoscale spheroidized carbides in ultrafine-grained (UFG) ferritic steel are examined. The average grain size of the studied steel is ~ 430 nm, and these grains coexist with numerous carbides. Neutron diffraction reveals that the intensity of (011) and (022) peaks for the UFG sample is significantly enhanced, suggesting that the (011)//RD texture is a result of the warm rolling process. The lattice parameter of UFG steel is smaller than that of a martensitic steel (M steel) counterpart, indicating a lower carbon concentration inmore » the lattice. The estimated dislocation densities for M steel and UFG steel are 2.59 × 10 14 cm –2 and 1.76 × 10 12 cm –2, respectively. The UFG steel reveals a nearly isotropic lattice strain response under initial tension from 0 to 450 MPa, where the lattice strains of the (110), (002), and (112) planes are identical. The increase of lattice strain of the (110) plane becomes smaller than that of the (002) and (112) planes as the stress exceeds 450 MPa, suggesting that the nanosized carbides contribute to the hardening ability by promoting the accumulation of geometrically necessary dislocations around the particles, and the (110) lattice becomes harder compared to the other two planes.« less
Ali, Ghusoon M.; Thompson, Cody V.; Jasim, Ali K.; Abdulbaqi, Isam M.; Moore, James C.
2013-01-01
Three methods were used to fabricate ZnO-based room temperature liquid petroleum gas (LPG) sensors having interdigitated metal-semiconductor-metal (MSM) structures. Specifically, devices with Pd Schottky contacts were fabricated with: (1) un-doped ZnO active layers; (2) Pd-doped ZnO active layers; and (3) un-doped ZnO layers on top of Pd microstructure arrays. All ZnO films were grown on p-type Si(111) substrates by the sol-gel method. For devices incorporating a microstructure array, Pd islands were first grown on the substrate by thermal evaporation using a 100 μm mesh shadow mask. We have estimated the sensitivity of the sensors for applied voltage from –5 to 5 V in air ambient, as well as with exposure to LPG in concentrations from 500 to 3,500 ppm at room temperature (300 K). The current-voltage characteristics were studied and parameters such as leakage current, barrier height, reach-through voltage, and flat-band voltage were extracted. We include contributions due to the barrier height dependence on the electric field and tunneling through the barrier for the studied MSM devices. The Pd-enhanced devices demonstrated a maximum gas response at flat-band voltages. The study also revealed that active layers consisting of Pd microstructure embedded ZnO films resulted in devices exhibiting greater gas-response as compared to those using Pd-doped ZnO thin films or un-doped active layers.
Stoichiometric Effects on the Photoelectric Properties of LiInSe 2 Crystals for Neutron Detection
DOE Office of Scientific and Technical Information (OSTI.GOV)
Guo, Lijian; Xu, Yadong; Zheng, Hongjian
6LiInSe 2 is a promising semiconductor candidate for thermal neutron detection due to its large capture cross-section. However, the charge collection efficiency is still insufficient for high resolution for the grown-in defects induced by the stoichiometric deviation. In this work, we report photoelectric properties of stoichiometric LiInSe 2 crystal boules up to 70 mm in length and 20 mm in diameter grown by the vertical Bridgman method. Inductively coupled plasma measurements demonstrate that the ratio of Li, In, and Se of the as-grown crystal is very close to 1:1:2, which is optimized by low temperature synthesis processing. The obtained singlemore » crystals display high bulk resistivity in the range of 10 11–10 12 Ω·cm and a direct band gap of 2.01–2.83 eV with a changeable color from red to yellow. The electronic structure of LiInSe 2 was studied using first-principles density functional theory calculations, which predicts that the antisite defects of In Li and Li In are the dominant factor for the different crystal colors observed. The stoichiometric LiInSe 2 crystal gives an improved energy resolution, for a semiconductor detector when illuminated with a 241Am@5.48 MeV α source, of 23.3%. In conclusion, the electron mobility-lifetime product (μτ) is ~2.5 × 10 –5 cm 2 V –1.« less
Stoichiometric Effects on the Photoelectric Properties of LiInSe 2 Crystals for Neutron Detection
Guo, Lijian; Xu, Yadong; Zheng, Hongjian; ...
2018-04-16
6LiInSe 2 is a promising semiconductor candidate for thermal neutron detection due to its large capture cross-section. However, the charge collection efficiency is still insufficient for high resolution for the grown-in defects induced by the stoichiometric deviation. In this work, we report photoelectric properties of stoichiometric LiInSe 2 crystal boules up to 70 mm in length and 20 mm in diameter grown by the vertical Bridgman method. Inductively coupled plasma measurements demonstrate that the ratio of Li, In, and Se of the as-grown crystal is very close to 1:1:2, which is optimized by low temperature synthesis processing. The obtained singlemore » crystals display high bulk resistivity in the range of 10 11–10 12 Ω·cm and a direct band gap of 2.01–2.83 eV with a changeable color from red to yellow. The electronic structure of LiInSe 2 was studied using first-principles density functional theory calculations, which predicts that the antisite defects of In Li and Li In are the dominant factor for the different crystal colors observed. The stoichiometric LiInSe 2 crystal gives an improved energy resolution, for a semiconductor detector when illuminated with a 241Am@5.48 MeV α source, of 23.3%. In conclusion, the electron mobility-lifetime product (μτ) is ~2.5 × 10 –5 cm 2 V –1.« less
Multi-phase back contacts for CIS solar cells
Rockett, A.A.; Yang, L.C.
1995-12-19
Multi-phase, single layer, non-interdiffusing M-Mo back contact metallized films, where M is selected from Cu, Ga, or mixtures thereof, for CIS cells are deposited by a sputtering process on suitable substrates, preferably glass or alumina, to prevent delamination of the CIS from the back contact layer. Typical CIS compositions include CuXSe{sub 2} where X is In or/and Ga. The multi-phase mixture is deposited on the substrate in a manner to provide a columnar microstructure, with micro-vein Cu or/and Ga regions which partially or fully vertically penetrate the entire back contact layer. The CIS semiconductor layer is then deposited by hybrid sputtering and evaporation process. The Cu/Ga-Mo deposition is controlled to produce the single layer two-phase columnar morphology with controllable Cu or Ga vein size less than about 0.01 microns in width. During the subsequent deposition of the CIS layer, the columnar Cu/Ga regions within the molybdenum of the Cu/Ga-Mo back layer tend to partially leach out, and are replaced by columns of CIS. Narrower Cu and/or Ga regions, and those with fewer inner connections between regions, leach out more slowly during the subsequent CIS deposition. This gives a good mechanical and electrical interlock of the CIS layer into the Cu/Ga-Mo back layer. Solar cells employing In-rich CIS semiconductors bonded to the multi-phase columnar microstructure back layer of this invention exhibit vastly improved photo-electrical conversion on the order of 17% greater than Mo alone, improved uniformity of output across the face of the cell, and greater Fill Factor. 15 figs.
Multi-phase back contacts for CIS solar cells
Rockett, Angus A.; Yang, Li-Chung
1995-01-01
Multi-phase, single layer, non-interdiffusing M-Mo back contact metallized films, where M is selected from Cu, Ga, or mixtures thereof, for CIS cells are deposited by a sputtering process on suitable substrates, preferably glass or alumina, to prevent delamination of the CIS from the back contact layer. Typical CIS compositions include CuXSe.sub.2 where X is In or/and Ga. The multi-phase mixture is deposited on the substrate in a manner to provide a columnar microstructure, with micro-vein Cu or/and Ga regions which partially or fully vertically penetrate the entire back contact layer. The CIS semiconductor layer is then deposited by hybrid sputtering and evaporation process. The Cu/Ga-Mo deposition is controlled to produce the single layer two-phase columnar morphology with controllable Cu or Ga vein size less than about 0.01 microns in width. During the subsequent deposition of the CIS layer, the columnar Cu/Ga regions within the molybdenum of the Cu/Ga-Mo back layer tend to partially leach out, and are replaced by columns of CIS. Narrower Cu and/or Ga regions, and those with fewer inner connections between regions, leach out more slowly during the subsequent CIS deposition. This gives a good mechanical and electrical interlock of the CIS layer into the Cu/Ga-Mo back layer. Solar cells employing In-rich CIS semiconductors bonded to the multi-phase columnar microstructure back layer of this invention exhibit vastly improved photo-electrical conversion on the order of 17% greater than Mo alone, improved uniformity of output across the face of the cell, and greater Fill Factor.
NASA Astrophysics Data System (ADS)
Tanwar, Khagesh; Saxena, Mandvi; Maiti, Tanmoy
2017-10-01
In general, n-type thermoelectric materials are rather difficult to design. This study particularly pivoted on designing potential environmentally benign oxides based n-type thermoelectric material. We synthesized Sr2CoMoO6 (SCMO) polycrystalline ceramics via the solid-state synthesis route. XRD, SEM, and thermoelectric measurements were carried out for phase constitution, microstructure analysis, and to determine its potential for thermoelectric applications. As-sintered SCMO sample showed an insulator like behavior till 640 °C after which it exhibited an n-type non-degenerate semiconductor behavior followed by a p-n type conduction switching. To stabilize a high temperature n-type behavior, annealing of SCMO in reducing atmosphere (H2) at 1000 °C was carried out. After annealing, the SCMO demonstrated an n-type semiconductor behavior throughout the temperature range of measurement. The electrical conductivity (σ) and the power factor (S2σ) were found to be increased manifold in the annealed SCMO double perovskite.
Laser-Excited Electronic and Thermal Elastic Vibrations in a Semiconductor Rectangular Plate
NASA Astrophysics Data System (ADS)
Todorović, D. M.; Cretin, B.; Vairac, P.; Song, Y. Q.; Rabasović, M. D.; Markushev, D. D.
2013-09-01
Photoacoustic and photothermal effects can be important as driven mechanisms for micro-(opto)-electro-mechanical structures (MOEMS). A new approach for a producing a compact, lightweight, highly sensitive detector is provided by MOEMS technology, which is based on the elastic bending of microstructure generated by absorption of modulated optical power. The electronic and thermal elastic vibrations (the electronic deformation and thermoelastic mechanisms of elastic wave generation) in a semiconductor rectangular simply supported plate (3D geometry), photogenerated by a focused and intensity-modulated laser beam, were studied. The theoretical model for the elastic displacements space and frequency distribution by using the Green function method was given. The amplitude of the elastic bending in the rectangular plate was calculated and analyzed, including the thermalization and surface and volume recombination heat sources. The theoretical results were compared with the experimental data. These investigations are important for many practical experimental situations (atomic force microscopy, thermal microscopy, thermoelastic microscopy, etc.) and sensors and actuators.
Time Resolved Near Field Optical Microscopy
NASA Astrophysics Data System (ADS)
Stark, J. B.
1996-03-01
We use broadband pulses to image the carrier dynamics of semiconductor microstructures on a 150 nm spatial scale, with a time resolution of 60 femtoseconds. Etched disks of GaAs/AlGaAs multiple quantum well material, 10 microns in diameter, are excited with a 30 fs pump from a Ti:Sapphire laser, and probed using a near-field optical microscope. The nonlinear transmission of the microdisks is measured using a double-modulation technique, sensitive to transmission changes of 0.0005 within a 150 nm diameter spot on the sample. This spot is scanned to produce an image of the sample. The nonlinear response is produced by the occupation of phase space by the excited distribution. Images of this evolving distribution are collected at time intervals following excitation, measuring the relaxation of carriers at each point in the microdisk. The resulting data can be viewed as a movie of the carrier dynamics of nonequilibrium distributions in excited semiconductor structures. Work done in collaboration with U. Mohideen and R. E. Slusher.
Density functional theory in materials science.
Neugebauer, Jörg; Hickel, Tilmann
2013-09-01
Materials science is a highly interdisciplinary field. It is devoted to the understanding of the relationship between (a) fundamental physical and chemical properties governing processes at the atomistic scale with (b) typically macroscopic properties required of materials in engineering applications. For many materials, this relationship is not only determined by chemical composition, but strongly governed by microstructure. The latter is a consequence of carefully selected process conditions (e.g., mechanical forming and annealing in metallurgy or epitaxial growth in semiconductor technology). A key task of computational materials science is to unravel the often hidden composition-structure-property relationships using computational techniques. The present paper does not aim to give a complete review of all aspects of materials science. Rather, we will present the key concepts underlying the computation of selected material properties and discuss the major classes of materials to which they are applied. Specifically, our focus will be on methods used to describe single or polycrystalline bulk materials of semiconductor, metal or ceramic form.
Direct growth of single-crystalline III–V semiconductors on amorphous substrates
Chen, Kevin; Kapadia, Rehan; Harker, Audrey; ...
2016-01-27
The III–V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III–V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III–V’s on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III–V’s of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. Themore » patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO 2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. In conclusion, the work presents an important advance towards universal integration of III–V’s on application-specific substrates by direct growth.« less
Direct growth of single-crystalline III–V semiconductors on amorphous substrates
Chen, Kevin; Kapadia, Rehan; Harker, Audrey; Desai, Sujay; Seuk Kang, Jeong; Chuang, Steven; Tosun, Mahmut; Sutter-Fella, Carolin M.; Tsang, Michael; Zeng, Yuping; Kiriya, Daisuke; Hazra, Jubin; Madhvapathy, Surabhi Rao; Hettick, Mark; Chen, Yu-Ze; Mastandrea, James; Amani, Matin; Cabrini, Stefano; Chueh, Yu-Lun; Ager III, Joel W.; Chrzan, Daryl C.; Javey, Ali
2016-01-01
The III–V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III–V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III–V's on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III–V's of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III–V's on application-specific substrates by direct growth. PMID:26813257
Colella, Nicholas S; Labastide, Joelle A; Cherniawski, Benjamin P; Thompson, Hilary B; Marques, Sarah R; Zhang, Lei; Usluer, Özlem; Watkins, James J; Briseno, Alejandro L; Barnes, Michael D
2017-07-06
Supercritical fluids, exhibiting a combination of liquid-like solvation power and gas-like diffusivity, are a relatively unexplored medium for processing and crystallization of oligomer and polymeric semiconductors whose optoelectronic properties critically depend on the microstructure. Here we report oligomer crystallization from the polymer organic semiconductor, poly[2,5-bis(3-dodecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT) in supercritical hexane, yielding needle-like single crystals up to several microns in length. We characterize the crystals' photophysical properties by time- and polarization-resolved photoluminescence (TPRPL) spectroscopy. These techniques reveal two-dimensional interchromophore coupling facilitated by the high degree of π-stacking order within the crystal. Furthermore, the crystals obtained from supercritical fluid were found to be similar photophysically as the crystallites found in solution-cast thin films and distinct from solution-grown crystals that exhibited spectroscopic signatures indicative of different packing geometries.
Dioszegi, Istvan; Salwen, Cynthia; Vanier, Peter
2014-12-30
A .gamma.-radiation detection system that includes at least one semiconductor detector such as HPGe-Detector, a position-sensitive .alpha.-Detector, a TOF Controller, and a Digitizer/Integrator. The Digitizer/Integrator starts to process the energy signals of a .gamma.-radiation sent from the HPGe-Detector instantly when the HPGe-Detector detects the .gamma.-radiation. Subsequently, it is determined whether a coincidence exists between the .alpha.-particles and .gamma.-radiation signal, based on a determination of the time-of-flight of neutrons obtained from the .alpha.-Detector and the HPGe-Detector. If it is determined that the time-of-flight falls within a predetermined coincidence window, the Digitizer/Integrator is allowed to continue and complete the energy signal processing. If, however, there is no coincidence, the Digitizer/Integrator is instructed to be clear and reset its operation instantly.
Synthesis and characterization of Ca-doped LaMnAsO
DOE Office of Scientific and Technical Information (OSTI.GOV)
Liu, Yong; Straszheim, Warren E.; Das, Pinaki
Here, we report on our attempt to hole-dope the antiferromagnetic semiconductor LaMnAsO by substitution of the La 3+ site by Ca 2+. We use neutron and x-ray diffraction, magnetic susceptibility, and transport techniques to characterize polycrystalline (La 1–xCa x)MnAsO samples prepared by solid-state reaction and find that the parent compound is highly resistant to substitution with an upper limit x ≤ 0.01. Magnetic susceptibility of the parent and the x = 0.002(x nom = 0.04) compounds indicate a negligible presence of magnetic impurities (i.e., MnO or MnAs). Rietveld analysis of neutron and x-ray diffraction data shows the preservation of bothmore » the tetragonal (P4/nmm) structure upon doping and the antiferromagnetic ordering temperature, T N = 355 ± 5 K.« less
NASA Astrophysics Data System (ADS)
Granja, Carlos; Kraus, Vaclav; Pugatch, Valery; Kohout, Zdenek
2017-06-01
In low-energy nuclear reactions of astrophysical interest or fusion studies the spatial- and time-correlated detection of two and more reaction products can be a valuable tool in studies of reaction mechanisms, resolving reaction channels and measuring angular distributions of reaction products. For this purpose we constructed a configurable array of position-sensitive detectors based on the hybrid semiconductor pixel detector Timepix. Additional analog-signal electronics provide self-trigger together with extended multi-device control and synchronized readout electronics by a customized control and coincidence unit. The instrumentation, developed and used for detection of fission fragments in spontaneous and neutron induced fission as well as in charged particle detection in neutron induced reactions, is being implemented for low-energy light-ion induced nuclear reactions. Application and demonstration of the technique with two Timepix detectors on p+p elastic scattering at the Van-de-Graaff (VdG) accelerator in Prague is given.
Synthesis and characterization of Ca-doped LaMnAsO
Liu, Yong; Straszheim, Warren E.; Das, Pinaki; ...
2018-05-18
Here, we report on our attempt to hole-dope the antiferromagnetic semiconductor LaMnAsO by substitution of the La 3+ site by Ca 2+. We use neutron and x-ray diffraction, magnetic susceptibility, and transport techniques to characterize polycrystalline (La 1–xCa x)MnAsO samples prepared by solid-state reaction and find that the parent compound is highly resistant to substitution with an upper limit x ≤ 0.01. Magnetic susceptibility of the parent and the x = 0.002(x nom = 0.04) compounds indicate a negligible presence of magnetic impurities (i.e., MnO or MnAs). Rietveld analysis of neutron and x-ray diffraction data shows the preservation of bothmore » the tetragonal (P4/nmm) structure upon doping and the antiferromagnetic ordering temperature, T N = 355 ± 5 K.« less
Neutron diffraction and ferromagnetic resonance studies on plasma-sprayed MnZn ferrite films
NASA Astrophysics Data System (ADS)
Yan, Q. Y.; Gambino, R. J.; Sampath, S.; Huang, Q.
2005-02-01
The magnetic properties of MnZn ferrites are affected by the plasma spray process. It is found that improvements can be made by annealing the ferrite films at 500°C-800°C. The annealing induced magnetic property changes are studied by neutron diffraction and ferromagnetic resonance techniques. The increase of the saturation magnetization is attributed to the cation ordering within the spinel lattice, which increases the magnetic moment per ferrite formula. The refinements on the neutron diffraction data suggest that the redistribution of the cation during annealing neither starts from a fully disordered state nor ends to a fully ordered state. The decrease of the coercivity is analyzed with the domain wall pinning model. The measurements on the magnetostriction and residual stress indicate that coercive mechanisms arising from the magnetoelastic energy term are not dominant in these ferrite films. The decrease of the coercivity for annealed ferrite films is mainly attributed to the decrease of the effective anisotropic field, which may result from the homogenization of the film composition and the reduction of the microstructural discontinuity (e.g., cracks, voids, and splat boundaries).
NASA Astrophysics Data System (ADS)
Bai, Xian-Ming; Ke, Huibin; Zhang, Yongfeng; Spencer, Benjamin W.
2017-11-01
Neutron irradiation in light water reactors can induce precipitation of nanometer sized Cu clusters in reactor pressure vessel steels. The Cu precipitates impede dislocation gliding, leading to an increase in yield strength (hardening) and an upward shift of ductile-to-brittle transition temperature (embrittlement). In this work, cluster dynamics modeling is used to model the entire Cu precipitation process (nucleation, growth, and coarsening) in a Fe-0.3at.%Cu alloy under neutron irradiation at 300°C based on the homogenous nucleation mechanism. The evolution of the Cu cluster number density and mean radius predicted by the modeling agrees well with experimental data reported in literature for the same alloy under the same irradiation conditions. The predicted precipitation kinetics is used as input for a dispersed barrier hardening model to correlate the microstructural evolution with the radiation hardening and embrittlement in this alloy. The predicted radiation hardening agrees well with the mechanical test results in the literature. Limitations of the model and areas for future improvement are also discussed in this work.
Recent progress of tungsten R&D for fusion application in Japan
NASA Astrophysics Data System (ADS)
Ueda, Y.; Lee, H. T.; Ohno, N.; Kajita, S.; Kimura, A.; Kasada, R.; Nagasaka, T.; Hatano, Y.; Hasegawa, A.; Kurishita, H.; Oya, Y.
2011-12-01
The status of ongoing research projects of tungsten R&D in Japan is summarized in this paper. For tungsten material development, a new improved fabrication technique, the so-called superplasticity-based microstructural modification, is described. This technique successfully improved fracture strength and ductility at room temperature. Recent results on vacuum plasma spray W coating and W brazing on ferritic steels and vanadium alloys are explained. Feasibility of these techniques for the manufacture of the blanket is successfully demonstrated. The latest findings on the effect of neutron damage in tungsten on T retention and on the change in mechanical and electrical properties are described. Retention characteristics for neutron-damaged W were different compared to those for ion-damaged W. Upon neutron irradiation, tungsten alloys containing transmutation elements of W (Re and Os) show changes in properties that are different compared with those shown by pure W. The effects of mixed plasma exposure (D/He/C) are described. Both D/He and D/C mixed ion irradiations significantly affect ion-driven permeation in W. He bubble dynamics play a key role in nano-structure formation on the W surface.
Structure-Property Relationships of Architectural Coatings by Neutron Methods
NASA Astrophysics Data System (ADS)
Nakatani, Alan
2015-03-01
Architectural coatings formulations are multi-component mixtures containing latex polymer binder, pigment, rheology modifiers, surfactants, and colorants. In order to achieve the desired flow properties for these formulations, measures of the underlying structure of the components as a function of shear rate and the impact of formulation variables on the structure is necessary. We have conducted detailed measurements to understand the evolution under shear of local microstructure and larger scale mesostructure in model architectural coatings formulations by small angle neutron scattering (SANS) and ultra small angle neutron scattering (USANS), respectively. The SANS results show an adsorbed layer of rheology modifier molecules exist on the surface of the latex particles. However, the additional hydrodynamic volume occupied by the adsorbed surface layer is insufficient to account for the observed viscosity by standard hard sphere suspension models (Krieger-Dougherty). The USANS results show the presence of latex aggregates, which are fractal in nature. These fractal aggregates are the primary structures responsible for coatings formulation viscosity. Based on these results, a new model for the viscosity of coatings formulations has been developed, which is capable of reproducing the observed viscosity behavior.
EPICS Controlled Collimator for Controlling Beam Sizes in HIPPO
DOE Office of Scientific and Technical Information (OSTI.GOV)
Napolitano, Arthur Soriano; Vogel, Sven C.
2017-08-03
Controlling the beam spot size and shape in a diffraction experiment determines the probed sample volume. The HIPPO - High-Pressure-Preferred Orientation– neutron time-offlight diffractometer is located at the Lujan Neutron Scattering Center in Los Alamos National Laboratories. HIPPO characterizes microstructural parameters, such as phase composition, strains, grain size, or texture, of bulk (cm-sized) samples. In the current setup, the beam spot has a 10 mm diameter. Using a collimator, consisting of two pairs of neutron absorbing boron-nitride slabs, horizontal and vertical dimensions of a rectangular beam spot can be defined. Using the HIPPO robotic sample changer for sample motion, themore » collimator would enable scanning of e.g. cylindrical samples along the cylinder axis by probing slices of such samples. The project presented here describes implementation of such a collimator, in particular the motion control software. We utilized the EPICS (Experimental Physics Interface and Control System) software interface to integrate the collimator control into the HIPPO instrument control system. Using EPICS, commands are sent to commercial stepper motors that move the beam windows.« less
Koyanagi, Takaaki; Nozawa, Takashi; Katoh, Yutai; ...
2017-12-20
For the development of silicon carbide (SiC) materials for next-generation nuclear structural applications, degradation of material properties under intense neutron irradiation is a critical feasibility issue. This paper evaluated the mechanical properties and microstructure of a chemical vapor infiltrated SiC matrix composite, reinforced with a multi-layer SiC/pyrolytic carbon–coated Hi-Nicalon TM Type S SiC fiber, following neutron irradiation at 319 and 629 °C to ~100 displacements per atom. Both the proportional limit stress and ultimate flexural strength were significantly degraded as a result of irradiation at both temperatures. After irradiation at 319 °C, the quasi-ductile fracture behavior of the nonirradiated compositemore » became brittle, a result that was explained by a loss of functionality of the fiber/matrix interface associated with the disappearance of the interphase due to irradiation. Finally, the specimens irradiated at 629 °C showed increased apparent failure strain because the fiber/matrix interphase was weakened by irradiation-induced partial debonding.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Koyanagi, Takaaki; Nozawa, Takashi; Katoh, Yutai
For the development of silicon carbide (SiC) materials for next-generation nuclear structural applications, degradation of material properties under intense neutron irradiation is a critical feasibility issue. This paper evaluated the mechanical properties and microstructure of a chemical vapor infiltrated SiC matrix composite, reinforced with a multi-layer SiC/pyrolytic carbon–coated Hi-Nicalon TM Type S SiC fiber, following neutron irradiation at 319 and 629 °C to ~100 displacements per atom. Both the proportional limit stress and ultimate flexural strength were significantly degraded as a result of irradiation at both temperatures. After irradiation at 319 °C, the quasi-ductile fracture behavior of the nonirradiated compositemore » became brittle, a result that was explained by a loss of functionality of the fiber/matrix interface associated with the disappearance of the interphase due to irradiation. Finally, the specimens irradiated at 629 °C showed increased apparent failure strain because the fiber/matrix interphase was weakened by irradiation-induced partial debonding.« less
Masoomi, Mohammad; Shamsaei, Nima; Winholtz, Robert A; Milner, Justin L; Gnäupel-Herold, Thomas; Elwany, Alaa; Mahmoudi, Mohamad; Thompson, Scott M
2017-08-01
Neutron diffraction was employed to measure internal residual stresses at various locations along stainless steel (SS) 17-4 PH specimens additively manufactured via laser-powder bed fusion (L-PBF). Of these specimens, two were rods (diameter=8 mm, length=80 mm) built vertically upward and one a parallelepiped (8×80×9 mm 3 ) built with its longest edge parallel to ground. One rod and the parallelepiped were left in their as-built condition, while the other rod was heat treated. Data presented provide insight into the microstructural characteristics of typical L-PBF SS 17-4 PH specimens and their dependence on build orientation and post-processing procedures such as heat treatment. Data have been deposited in the Data in Brief Dataverse repository (doi:10.7910/DVN/T41S3V).
DOE Office of Scientific and Technical Information (OSTI.GOV)
Stubbins, James; Heuser, Brent; Hosemann, Peter
This final technical report summarizes the research performed during October 2014 and December 2017, with a focus on investigating the radiation-induced microstructural and mechanical property modifications in optimized advanced alloys for sodium-cooled fast reactor (SFR) structural applications. To accomplish these objectives, the radiation responses of several different advanced alloys, including austenitic steel Alloy 709 (A709) and 316H, and ferritic/ martensitic Fe–9Cr steels T91 and G92, were investigated using a combination of microstructure characterizations and nanoindentation measurements. Different types of irradiation, including ex situ bulk ion irradiation and in situ transmission electron microscopy (TEM) ion irradiation, were employed in this study.more » Radiation-induced dislocations, precipitates, and voids were characterized by TEM. Scanning transmission electron microscopy with energy dispersive X-ray spectroscopy (STEM-EDS) and/or atom probe tomography (APT) were used to study radiation-induced segregation and precipitation. Nanoindentation was used for hardness measurements to study irradiation hardening. Austenitic A709 and 316H was bulk-irradiated by 3.5 MeV Fe ++ ions to up to 150 peak dpa at 400, 500, and 600°. Compared to neutron-irradiated stainless steel (SS) 316, the Frank loop density of ion-irradiated A709 shows similar dose dependence at 400°, but very different temperature dependence. Due to the noticeable difference in the initial microstructure of A709 and 316H, no systematic comparison on the Frank loops in A709 vs 316H was made. It would be helpful that future ion irradiation study on 316 stainless steel could be conducted to directly compare the temperature dependence of Frank loop density in ion-irradiated 316 SS with that in neutron-irradiated 316 SS. In addition, future neutron irradiation on A709 at 400–600° at relative high dose (≥10 dpa) can be carried out to compare with ion-irradiated A709. The radiation-induced segregation (RIS) of Ni and Si was observed in both A709 and 316H in all irradiated conditions and was found at various sinks: line dislocations, dislocation loops, void surfaces, carbide-matrix interfaces, etc. Radiation also induced the formation of Ni,Si-rich precipitates. As suggested in a previous study on neutron-irradiated 316 stainless steel, one possible consequence of the significant RIS of Si is that the enrichment at defect sinks depletes the silicon in the matrix, which can lead to enhanced void nucleation rate. The enrichment of Ni and Si is accompanied by the depletion of Cr at defect sinks, which could also affect the corrosion resistance. Radiation-induced change in the orientation relationship of pre-existing MX precipitates was observed at 600°. It is believed that this change is associated with the network dislocations formed under irradiation. The underlying mechanism is still not well understood. This change could be a positive indication that the MX precipitates can survive high density network dislocations. It would be helpful if neutron irradiation at similar dose conditions could be carried out to verify that this effect is not unique for ion irradiation. Intragranular Cr-rich carbides with a core-shell structure, i.e. Cr-rich carbide core and Ni,Si-rich shell was found at 500° and 600° in the highest dose (150 peak dpa) specimens. Coarse voids (30 nm in diameter) were only commonly found at 500° in the 50 and 150 peak dpa specimens in regions less than 750 nm in depth. The highest swelling for A709 irradiated to 50 and 150 peak dpa at 500° is about 0.44% and 0.37%, respectively. Due to the choice of 100 degree temperature intervals, this study did not attempt to precisely identify peak void swelling conditions, merely the range of irradiation temperatures where this could be a concern. It is known high-dose ion irradiation can significantly suppress void nucleation. Future neutron irradiation in the 500–600° range (without considering the temperature shift) is needed to determine the onset of accelerated void swelling (possibly at lower dose).« less
Spallation radiation effects in materials
DOE Office of Scientific and Technical Information (OSTI.GOV)
Mansur, L.K.; Farrell, K.; Wechsler, M.S.
1996-06-01
Spallation refers to the process whereby particles (chiefly neutrons) are ejected from nuclei upon bombardment by high-energy protons. Spallation neutron sources (SNS`s) use these neutrons for neutron scattering and diffraction research, and SNS`s are proposed as the basis for systems for tritium production and transmutation of nuclear waste. Materials in SNS`s are exposed to the incident proton beam (energies typically about 1000 MeV) and to the spallation neutrons (spectrum of energies extending up to about 1000 MeV). By contrast the fission neutrons in nuclear reactors have an average energy of only about 2 MeV, and the neutrons in fusion reactorsmore » would have energies below about 14 MeV. Furthermore, the protons and neutrons in SNS`s for scattering and diffraction research are pulsed at frequencies of about 10 to 60 Hz, from which significant changes in the kinetics of point and extended defects may be expected. In addition, much higher transmutation rates occur in SNS-irradiated materials, On the whole, then, significant differences in microstructural development and macroscopic properties may result upon exposure in SNS systems, as compared with fission and fusion irradiations. In a more general sense, subjecting materials to new radiation environments has almost routinely led to new discoveries. To the extent that data are avaiable, however, the spallation environment appears to increase the degree of damage without introducing totally new effects. The first part of this presentation is an overview of radiation effects in materials, outlining essential concepts and property changes and their physical bases. This background is followed by a description of SNS irradiation environments and the effects on materials of exposure to these environments. A special discussion is given of the selection of target (e.g., liquid mercury), container (e.g., austenitic stainless steel or ferritic/martensitic steel), and structural materials in SNS systems.« less
Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits
NASA Astrophysics Data System (ADS)
Gundlach, D. J.; Royer, J. E.; Park, S. K.; Subramanian, S.; Jurchescu, O. D.; Hamadani, B. H.; Moad, A. J.; Kline, R. J.; Teague, L. C.; Kirillov, O.; Richter, C. A.; Kushmerick, J. G.; Richter, L. J.; Parkin, S. R.; Jackson, T. N.; Anthony, J. E.
2008-03-01
The use of organic materials presents a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. Commercialization of this technology requires reduction in manufacturing costs by exploiting inexpensive low-temperature deposition and patterning techniques, which typically lead to lower device performance. We report a low-cost approach to control the microstructure of solution-cast acene-based organic thin films through modification of interfacial chemistry. Chemically and selectively tailoring the source/drain contact interface is a novel route to initiating the crystallization of soluble organic semiconductors, leading to the growth on opposing contacts of crystalline films that extend into the transistor channel. This selective crystallization enables us to fabricate high-performance organic thin-film transistors and circuits, and to deterministically study the influence of the microstructure on the device characteristics. By connecting device fabrication to molecular design, we demonstrate that rapid film processing under ambient room conditions and high performance are not mutually exclusive.
Compare the phase transition properties of VO2 films from infrared to terahertz range
NASA Astrophysics Data System (ADS)
Liang, Shan; Shi, Qiwu; Huang, Wanxia; Peng, Bo; Mao, Zhenya; Zhu, Hongfu
2018-06-01
VO2 with reversible semiconductor-metal phase transition properties is particularly available for the application in smart opto-electrical devices. However, there are rare reports on comparing its phase transition properties at different ranges. In this study, the VO2 films are designed with the similar crystalline structure and stoichiometry, but different morphologies by inorganic and organic sol-gel methods, and their phase transition characteristics are compared both at infrared and terahertz range. The results indicate that the VO2 film prepared by inorganic sol-gel method shows more compact nanostructure. It results in larger resistivity change, infrared and terahertz switching ratio in the VO2 film. Moreover, it presents that the phase transition intensity of VO2 film in terahertz range is more sensitive to its microstructure. This work is helpful for understanding the susceptibility of terahertz switching properties of VO2 to its microstructure. And it can provide insights for the applications of VO2 in terahertz smart devices.
The relationship between the dislocations and microstructure in In0.82Ga0.18As/InP heterostructures.
Zhao, Liang; Guo, Zuoxing; Wei, Qiulin; Miao, Guoqing; Zhao, Lei
2016-10-11
In this work, we propose a formation mechanism to explain the relationship between the surface morphology (and microstructure) and dislocations in the In 0.82 Ga 0.18 As/InP heterostructure. The In 0.82 Ga 0.18 As epitaxial layers were grown on the InP (100) substrate at various temperatures (430 °C, 410 °C and 390 °C) using low pressure metalorganic chemical vapor deposition (LP-MOCVD). Obvious protrusions and depressions were obseved on the surface of the In 0.82 Ga 0.18 As/InP heterostructure because of the movement of dislocations from the core to the surface. The surface morphologies of the In 0.82 Ga 0.18 As/InP (100) system became uneven with increasing temperature, which was associated with the formation of dislocations. Such research investigating the dislocation of large lattice mismatch heterostructures may play an important role in the future-design of semiconductor films.
Metastable growth of pure wurtzite InGaAs microstructures.
Ng, Kar Wei; Ko, Wai Son; Lu, Fanglu; Chang-Hasnain, Connie J
2014-08-13
III-V compound semiconductors can exist in two major crystal phases, namely, zincblende (ZB) and wurtzite (WZ). While ZB is thermodynamically favorable in conventional III-V epitaxy, the pure WZ phase can be stable in nanowires with diameters smaller than certain critical values. However, thin nanowires are more vulnerable to surface recombination, and this can ultimately limit their performances as practical devices. In this work, we study a metastable growth mechanism that can yield purely WZ-phased InGaAs microstructures on silicon. InGaAs nucleates as sharp nanoneedles and expand along both axial and radial directions simultaneously in a core-shell fashion. While the base can scale from tens of nanometers to over a micron, the tip can remain sharp over the entire growth. The sharpness maintains a high local surface-to-volume ratio, favoring hexagonal lattice to grow axially. These unique features lead to the formation of microsized pure WZ InGaAs structures on silicon. To verify that the WZ microstructures are truly metastable, we demonstrate, for the first time, the in situ transformation from WZ to the energy-favorable ZB phase inside a transmission electron microscope. This unconventional core-shell growth mechanism can potentially be applied to other III-V materials systems, enabling the effective utilization of the extraordinary properties of the metastable wurtzite crystals.
Liu, Jin; Lu, Wei; Zhong, Qian; Wu, Hongzhang; Li, Yunlin; Li, Lili; Wang, Zhenling
2018-06-01
Semiconductor photocatalysis has become the focus of recent research on antibiotic treatment because it is a green and efficient technology. In this study, α-GaOOH with several novel microstructures has been synthesized at a low temperature and its subsequent thermal transformation. The influence of pH on the synthesis of α-GaOOH is studied, and the results indicate that pH played an important role in the microstructures of α-GaOOH and β-Ga 2 O 3 . All Ga 2 O 3 samples possess macro-mesoporous network structures and exhibits a remarkable photocatalytic activity for antibiotic degradation. The photoelectron chemical tests show that the separation efficiency of photogenerated charge carriers of Ga 2 O 3 -7.0 is higher than that of other Ga 2 O 3 . The enhanced photocatalytic activity of Ga 2 O 3 -7.0 is mainly ascribed to its morphology and oxygen vacancy. The active species trapping and photoluminescence measurement experiments indicate that OH and O 2 - are the major active species contributing to the photocatalytic process. This study will bring about the potential application in treatment of the antibiotic pollutants. Copyright © 2018 Elsevier Inc. All rights reserved.
Ionic liquids for nano- and microstructures preparation. Part 2: Application in synthesis.
Łuczak, Justyna; Paszkiewicz, Marta; Krukowska, Anna; Malankowska, Anna; Zaleska-Medynska, Adriana
2016-01-01
Ionic liquids (ILs) are widely applied to prepare metal nanoparticles and 3D semiconductor microparticles. Generally, they serve as a structuring agent or reaction medium (solvent), however it was also demonstrated that ILs can play a role of a co-solvent, metal precursor, reducing as well as surface modifying agent. The crucial role and possible types of interactions between ILs and growing particles have been presented in the Part 1 of this review paper. Part 2 of the paper gives a comprehensive overview of recent experimental studies dealing with application of ionic liquids for preparation of metal and semiconductor based nano- and microparticles. A wide spectrum of preparation routes using ionic liquids is presented, including precipitation, sol-gel technique, hydrothermal method, nanocasting and ray-mediated methods (microwave, ultrasound, UV-radiation and γ-radiation). It was found that ionic liquids formed of a 1-butyl-3-methylimidazolium [BMIM] combined with tetrafluoroborate [BF4], hexafluorophosphate [PF6], and bis(trifluoromethanesulfonyl)imide [Tf2N] are the most often used ILs in the synthesis of nano- and microparticles, due to their low melting temperature, low viscosity and good transportation properties. Nevertheless, examples of other IL classes with intrinsic nanoparticles stabilizing abilities such as phosphonium and ammonium derivatives are also presented. Experimental data revealed that structure of ILs (both anion and cation type) affects the size and shape of formed metal particles, and in some cases may even determine possibility of particles formation. The nature of the metal precursor determines its affinity to polar or nonpolar domains of ionic liquid, and therefore, the size of the nanoparticles depends on the size of these regions. Ability of ionic liquids to form varied extended interactions with particle precursor as well as other compounds presented in the reaction media (water, organic solvents etc.) provides nano- and microstructures with different morphologies (0D nanoparticles, 1D nanowires, rods, 2D layers, sheets, and 3D features of molecules). ILs interact efficiently with microwave irradiation, thus even small amount of IL can be employed to increase the dielectric constant of nonpolar solvents used in the synthesis. Thus, combining the advantages of ionic liquids and ray-mediated methods resulted in the development of new ionic liquid-assisted synthesis routes. One of the recently proposed approaches of semiconductor particles preparation is based on the adsorption of semiconductor precursor molecules at the surface of micelles built of ionic liquid molecules playing a role of a soft template for growing microparticles. Copyright © 2015 Elsevier B.V. All rights reserved.
Modelling irradiation-induced softening in BCC iron by crystal plasticity approach
NASA Astrophysics Data System (ADS)
Xiao, Xiazi; Terentyev, Dmitry; Yu, Long; Song, Dingkun; Bakaev, A.; Duan, Huiling
2015-11-01
Crystal plasticity model (CPM) for BCC iron to account for radiation-induced strain softening is proposed. CPM is based on the plastically-driven and thermally-activated removal of dislocation loops. Atomistic simulations are applied to parameterize dislocation-defect interactions. Combining experimental microstructures, defect-hardening/absorption rules from atomistic simulations, and CPM fitted to properties of non-irradiated iron, the model achieves a good agreement with experimental data regarding radiation-induced strain softening and flow stress increase under neutron irradiation.
NASA Astrophysics Data System (ADS)
Rizzolo, Michael
As copper interconnects have scaled to ever smaller dimensions on semiconductor devices, the microstructure has become increasingly detrimental for performance and reliability. Small grains persist in interconnects despite annealing at high temperatures, leading to higher line resistance and more frequent electromigration-induced failures. Conventionally, it was believed that impurities from the electrodeposition pinned grain growth, but limitations in analytical techniques meant the effect was inferred rather than observed. Recent advances in analytical techniques, however, have enabled this work to quantify impurity content, location, and diffusion in relation to microstructural changes in electroplated copper. Surface segregation of impurities during the initial burst of grain growth was investigated. After no surface segregation was observed, a microfluidic plating cell was constructed to plate multilayer films with regions of intentionally high and low impurity concentrations to determine if grain growth could be pinned by the presence of impurities; it was not. An alternate mechanism for grain boundary pinning based on the texture of the seed layer is proposed, supported by time-resolved transmission electron microscopy and transmission electron backscatter diffraction data. The suggested model posits that the seed in narrow features has no preferred orientation, which results in rapid nucleation of subsurface grains in trench regions prior to recrystallization from the overburden down. These rapidly growing grains are able to block off several trenches from the larger overburden grains, inhibiting grain growth in narrow features. With this knowledge in hand, metallic capping layers were employed to address the problematic microstructure in 70nm lines. The capping layers (chromium, nickel, zinc, and tin) were plated on the copper overburden prior to annealing to manipulate the stress gradient and microstructural development during annealing. It appeared that regardless of as-plated stress, nickel capping altered the recrystallized texture of the copper over patterned features. The nickel capping also caused a 2x increase in the number of advantageous 'bamboo' grains that span the entire trench, which effectively block electromigration pathways. These data provides a more fundamental understanding of manipulating the microstructure in copper interconnects using pre-anneal capping layers, and demonstrates a strategy to improve the microstructure beyond the capabilities of simple annealing.
Operation and Applications of the Boron Cathodic Arc Ion Source
NASA Astrophysics Data System (ADS)
Williams, J. M.; Klepper, C. C.; Chivers, D. J.; Hazelton, R. C.; Freeman, J. H.
2008-11-01
The boron cathodic arc ion source has been developed with a view to several applications, particularly the problem of shallow junction doping in semiconductors. Research has included not only development and operation of the boron cathode, but other cathode materials as well. Applications have included a large deposition directed toward development of a neutron detector and another deposition for an orthopedic coating, as well as the shallow ion implantation function. Operational experience is described and information pertinent to commercial operation, extracted from these experiments, is presented.
Universal formulation of excitonic linear absorption spectra in all semiconductor microstructures
NASA Astrophysics Data System (ADS)
Lefebvre, Pierre; Christol, Philippe; Mathieu, Henry
1995-01-01
We present a generalization of the well-known exciton absorption calculations of Elliott [Phys. Rev. 108, 1384 (1957)], in the 3-dimensional case, and of Shinada and Sugano [J. Phys. Soc. Japan 21, 1936 (1966)], for 2-dimensional media: We calculate the optical absorption spectra of bound and unbound exciton states, by using a metric space with a noninteger dimension α (1 < α), obtaining almost exactly the same theoretical lineshapes as those resulting from accurate but costly numerical approaches [Chuang et al. Phys. Rev. B, 43, 1500 (1991); Benner and Haug, Phys. Rev. B 47, 15750 (1993)].
Flexible inorganic light emitting diodes based on semiconductor nanowires
Guan, Nan; Dai, Xing; Babichev, Andrey V.; Julien, François H.
2017-01-01
The fabrication technologies and the performance of flexible nanowire light emitting diodes (LEDs) are reviewed. We first introduce the existing approaches for flexible LED fabrication, which are dominated by organic technologies, and we briefly discuss the increasing research effort on flexible inorganic LEDs achieved by micro-structuring and transfer of conventional thin films. Then, flexible nanowire-based LEDs are presented and two main fabrication technologies are discussed: direct growth on a flexible substrate and nanowire membrane formation and transfer. The performance of blue, green, white and bi-color flexible LEDs fabricated following the transfer approach is discussed in more detail. PMID:29568439
LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Matrix laser IR-visible image converter
NASA Astrophysics Data System (ADS)
Lipatov, N. I.; Biryukov, A. S.
2006-04-01
A new type of a focal matrix IR-visible image converter is proposed. The pixel IR detectors of the matrix are tunable microcavities of VCSEL (vertical-cavity surface emitting laser) semiconductor microstructures. The image conversion is performed due to the displacements of highly reflecting cavity mirrors caused by thermoelastic stresses in their microsuspensions appearing upon absorption of IR radiation. Analysis of the possibilities of the converter shows that its sensitivity is 10-3-10-2 K and the time response is 10-4-10-3 s. These characteristics determine the practical application of the converter.
Synthesis of n-type Bi4-xLaxTi3O12 (x=0 to 0.45) by alternative mechanochemical method
NASA Astrophysics Data System (ADS)
Sharanappa, Nagbasavanna
2017-05-01
Lanthanum doped bismuth titanate ceramic samples have been successfully synthesized by mechanochemical method showed good properties and have investigated the structure, microstructure, dielectric, Curie-Weiss behavior, thermoelectric properties, which resulted from substitution of La-ions in bismuth titanate. Plate-like shape with enhanced density is observed in the SEM micrographs. Ceramic samples exhibiting relaxor ferroelectric behavior by satisfying Curie-Weiss law. Thermoelectric studies reveal n-type semiconducting behavior of these samples. Synthesized compounds explored these desirable properties for innovative semiconductor based device applications.
Intergrannular strain evolution in a zircaloy-4 alloy with Widmanstatten microstructure
DOE Office of Scientific and Technical Information (OSTI.GOV)
Clausen, Bjorn; Vogel, Sven C; Garlea, Eena
2009-01-01
A Zircaloy-4 alloy with Widmanstatten-Basketweave microstructure and random texture has been used to study the deformation systems responsible for the polycrystalline plasticity at the grain level. The evolution of internal strain and bulk texture is investigated using neutron diffraction and an elasto-plastic self-consistent (EPSC) modeling scheme. The macroscopic stress-strain behavior and intergranular (hkil-specific) strain development, parallel and perpendicular to the loading direction, were measured in-situ during uniaxial tensile loading. Then, the EPSC model was employed to simulate the experimental results. This modeling scheme accounts for the thermal anisotropy; elastic-plastic properties of the constituent grains; and activation, reorientation, and stress relaxationmore » associated with twinning. The agreement between the experiment and the model will be discussed as well as the critical resolved shear stresses (CRSS) and the hardening coefficients obtained from the model.« less
Effect of irradiation temperature on microstructure of ferritic-martensitic ODS steel
NASA Astrophysics Data System (ADS)
Klimenkov, M.; Lindau, R.; Jäntsch, U.; Möslang, A.
2017-09-01
The EUROFER-ODS alloy with 0.5% Y2O3 was neutron irradiated with doses up to 16.2 dpa at 250 °C, 350 °C and 450 °C. The radiation induced changes in the microstructure (e.g. dislocation loops and voids) were investigated using transmission electron microscopy (TEM). The number density of radiation induced defects was found to be significantly lower than in EUROFER 97 irradiated at the same conditions. It was found that the appearance and extent of radiation damage strongly depend not only on the irradiation temperature but also on the local number density and size distribution of ODS particles. The higher number density of dislocation loops and voids was found in the local areas with low number density of ODS particles. The interstitial loops with Burgers vector of both ½<111> and <100> types were detected by imaging using different diffraction conditions.
Nedelkoski, Zlatko; Kuerbanjiang, Balati; Glover, Stephanie E.; Sanchez, Ana M.; Kepaptsoglou, Demie; Ghasemi, Arsham; Burrows, Christopher W.; Yamada, Shinya; Hamaya, Kohei; Ramasse, Quentin M.; Hasnip, Philip J.; Hase, Thomas; Bell, Gavin R.; Hirohata, Atsufumi; Lazarov, Vlado K.
2016-01-01
Halfmetal-semiconductor interfaces are crucial for hybrid spintronic devices. Atomically sharp interfaces with high spin polarisation are required for efficient spin injection. In this work we show that thin film of half-metallic full Heusler alloy Co2FeSi0.5Al0.5 with uniform thickness and B2 ordering can form structurally abrupt interface with Ge(111). Atomic resolution energy dispersive X-ray spectroscopy reveals that there is a small outdiffusion of Ge into specific atomic planes of the Co2FeSi0.5Al0.5 film, limited to a very narrow 1 nm interface region. First-principles calculations show that this selective outdiffusion along the Fe-Si/Al atomic planes does not change the magnetic moment of the film up to the very interface. Polarized neutron reflectivity, x-ray reflectivity and aberration-corrected electron microscopy confirm that this interface is both magnetically and structurally abrupt. Finally, using first-principles calculations we show that this experimentally realised interface structure, terminated by Co-Ge bonds, preserves the high spin polarization at the Co2FeSi0.5Al0.5/Ge interface, hence can be used as a model to study spin injection from half-metals into semiconductors. PMID:27869132
Advanced development of double-injection, deep-impurity semiconductor switches
NASA Technical Reports Server (NTRS)
Hanes, M. H.
1987-01-01
Deep-impurity, double-injection devices, commonly refered to as (DI) squared devices, represent a class of semiconductor switches possessing a very high degree of tolerance to electron and neutron irradiation and to elevated temperature operation. These properties have caused them to be considered as attractive candidates for space power applications. The design, fabrication, and testing of several varieties of (DI) squared devices intended for power switching are described. All of these designs were based upon gold-doped silicon material. Test results, along with results of computer simulations of device operation, other calculations based upon the assumed mode of operation of (DI) squared devices, and empirical information regarding power semiconductor device operation and limitations, have led to the conculsion that these devices are not well suited to high-power applications. When operated in power circuitry configurations, they exhibit high-power losses in both the off-state and on-state modes. These losses are caused by phenomena inherent to the physics and material of the devices and cannot be much reduced by device design optimizations. The (DI) squared technology may, however, find application in low-power functions such as sensing, logic, and memory, when tolerance to radiation and temperature are desirable (especially is device performance is improved by incorporation of deep-level impurities other than gold.
NASA Astrophysics Data System (ADS)
Gurnon, Amanda Kate
The complex, nonlinear flow behavior of soft materials transcends industrial applications, smart material design and non-equilibrium thermodynamics. A long-standing, fundamental challenge in soft-matter science is establishing a quantitative connection between the deformation field, local microstructure and macroscopic dynamic flow properties i.e., the rheology. Soft materials are widely used in consumer products and industrial processes including energy recovery, surfactants for personal healthcare (e.g. soap and shampoo), coatings, plastics, drug delivery, medical devices and therapeutics. Oftentimes, these materials are processed by, used during, or exposed to non-equilibrium conditions for which the transient response of the complex fluid is critical. As such, designing new dynamic experiments is imperative to testing these materials and further developing micromechanical models to predict their transient response. Two of the most common classes of these soft materials stand as the focus of the present research; they are: solutions of polymer-like micelles (PLM or also known as wormlike micelles, WLM) and concentrated colloidal suspensions. In addition to their varied applications these two different classes of soft materials are also governed by different physics. In contrast, to the shear thinning behavior of the WLMs at high shear rates, the near hard-sphere colloidal suspensions are known to display increases, sometimes quite substantial, in viscosity (known as shear thickening). The stress response of these complex fluids derive from the shear-induced microstructure, thus measurements of the microstructure under flow are critical for understanding the mechanisms underlying the complex, nonlinear rheology of these complex fluids. A popular micromechanical model is reframed from its original derivation for predicting steady shear rheology of polymers and WLMs to be applicable to weakly nonlinear oscillatory shear flow. The validity, utility and limits of this constitutive model are tested by comparison with experiments on model WLM solutions. Further comparisons to the nonlinear oscillatory shear responses measured from colloidal suspensions establishes this analysis as a promising, quantitative method for understanding the underlying mechanisms responsible for the nonlinear dynamic response of complex fluids. A new experimental technique is developed to measure the microstructure of complex fluids during steady and transient shear flow using small-angle neutron scattering (SANS). The Flow-SANS experimental method is now available to the broader user communities at the NIST Center for Neutron Research, Gaithersburg, MD and the Institut Laue-Langevin, Grenoble, France. Using this new method, a model shear banding WLM solution is interrogated under steady and oscillatory shear. For the first time, the flow-SANS methods identify new metastable states for shear banding WLM solutions, thus establishing the method as capable of probing new states not accessible using traditional steady or linear oscillatory shear methods. The flow-induced three-dimensional microstructure of a colloidal suspension under steady and dynamic oscillatory shear is also measured using these rheo- and flow-SANS methods. A new structure state is identified in the shear thickening regime that proves critical for defining the "hydrocluster" microstructure state of the suspension that is responsible for shear thickening. For both the suspensions and the WLM solutions, stress-SANS rules with the measured microstructures define the individual stress components arising separately from conservative and hydrodynamic forces and these are compared with the macroscopic rheology. Analysis of these results defines the crucial length- and time-scales of the transient microstructure response. The novel dynamic microstructural measurements presented in this dissertation provide new insights into the complexities of shear thickening and shear banding flow phenomena, which are effects observed more broadly across many different types of soft materials. Consequently, the microstructure-rheology property relationships developed for these two classes of complex fluids will aid in the testing and advancement of micromechanical constitutive model development, smart material design, industrial processing and fundamental non-equilibrium thermodynamic research of a broad range of soft materials.
García-Martín, Susana; Morata-Orrantía, Ainhoa; Alario-Franco, Miguel A; Rodríguez-Carvajal, Juan; Amador, Ulises
2007-01-01
The crystal structures of several oxides of the La(2/3)Li(x)Ti(1-x)Al(x)O(3) system have been studied by selected-area electron diffraction, high-resolution transmission electron microscopy, and powder neutron diffraction, and their lithium conductivity has been by complex impedance spectroscopy. The compounds have a perovskite-related structure with a unit cell radical2 a(p)x2 a(p)x radical2 a(p) (a(p)=perovskite lattice parameter) due to the tilting of the (Ti/Al)O(6) octahedra and the ordering of lanthanum and lithium ions and vacancies along the 2 a(p) axis. The Li(+) ions present a distorted square-planar coordination and are located in interstitial positions of the structure, which could explain the very high ionic conductivity of this type of material. The lithium conductivity depends on the oxide composition and its crystal microstructure, which varies with the thermal treatment of the sample. The microstructure of these titanates is complex due to formation of domains of ordering and other defects such as strains and compositional fluctuations.
Emulation of reactor irradiation damage using ion beams
Was, G. S.; Jiao, Z.; Getto, E.; ...
2014-06-14
The continued operation of existing light water nuclear reactors and the development of advanced nuclear reactor depend heavily on understanding how damage by radiation to levels degrades materials that serve as the structural components in reactor cores. The first high dose ion irradiation experiments on a ferritic-martensitic steel showing that ion irradiation closely emulates the full radiation damage microstructure created in-reactor are described. Ferritic-martensitic alloy HT9 (heat 84425) in the form of a hexagonal fuel bundle duct (ACO-3) accumulated 155 dpa at an average temperature of 443°C in the Fast Flux Test Facility (FFTF). Using invariance theory as a guide,more » irradiation of the same heat was conducted using self-ions (Fe++) at 5 MeV at a temperature of 460°C and to a dose of 188 displacements per atom. The void swelling was nearly identical between the two irradiation and the size and density of precipitates and loops following ion irradiation are within a factor of two of those for neutron irradiation. The level of agreement across all of the principal microstructure changes between ion and reactor irradiation establishes the capability of tailoring ion irradiation to emulate the reactor-irradiated microstructure.« less
NASA Astrophysics Data System (ADS)
Tsay, K. V.; Maksimkin, O. P.; Turubarova, L. G.; Rofman, O. V.; Garner, F. A.
2013-08-01
Transmission electron microscopy and microhardness measurements were used to examine changes in microstructure and associated strengthening induced in austenitic stainless steel 12Cr18Ni9Ti irradiated to ˜0.001 and ˜5 dpa in the WWR-K reactor before and after being subjected to post-irradiation isochronal annealing. The relatively low values of irradiation temperature and dpa rate (˜80 °C and ˜1.2 × 10-8 dpa/s) experienced by this steel allowed characterization of defect microstructures over a wide range of defect ensembles, all at constant composition, produced first by irradiation and then by annealing at temperatures between 450 and 1050 °C. It was shown that the dispersed barrier hardening model with commonly accepted physical properties successfully predicted the observed hardening. It was also observed that when TiC precipitates form at higher annealing temperatures, the alloy does not change in hardness, reflecting a balance between precipitate-hardening and matrix-softening due to removal of solute-strengthening elements titanium and carbon. Such matrix-softening is not often considered in other studies, especially where the contribution of precipitates to hardening is a second-order effect.
Microstructural evolution of neutron-irradiated T91 and NF616 to ~4.3 dpa at 469 °C
Tan, Lizhen; Kim, B. K.; Yang, Ying; ...
2017-05-30
Ferritic-martensitic steels such as T91 and NF616 are candidate materials for several nuclear applications. Here, this study evaluates radiation resistance of T91 and NF616 by examining their microstructural evolutions and hardening after the samples were irradiated in the Advanced Test Reactor to ~4.3 displacements per atom (dpa) at an as-run temperature of 469 °C. In general, this irradiation did not result in significant difference in the radiation-induced microstructures between the two steels. Compared to NF616, T91 had a higher number density of dislocation loops and a lower level of radiation-induced segregation, together with a slightly higher radiation-hardening. Unlike dislocation loopsmore » developed in both steels, radiation-induced cavities were only observed in T91 but remained small with sub-10 nm sizes. Lastly, other than the relatively stable M 23C 6, a new phase (likely Sigma phase) was observed in T91 and radiation-enhanced MX → Z phase transformation was identified in NF616. Laves phase was not observed in the samples.« less
NASA Astrophysics Data System (ADS)
Sediako, Dimitry G.; Kasprzak, Wojciech
2015-09-01
Understanding of the kinetics of solid-phase evolution in solidification of hypereutectic aluminum alloys is a key to control their as-cast microstructure and resultant mechanical properties, and in turn, to enhance the service characteristics of actual components. This study was performed to evaluate the solidification kinetics for three P-modified hypereutectic Al-19 pct Si alloys: namely, Al-Si binary alloy and with the subsequent addition of 2.8 pct Cu and 2.8 pct Cu + 0.7 pct Mg. Metallurgical evaluation included thermodynamic calculations of the solidification process using the FactSage™ 6.2 software package, as well as experimental thermal analysis, and in situ neutron diffraction. The study revealed kinetics of solid α-Al, solid Si, Al2Cu, and Mg2Si evolution, as well as the individual effects of Cu and Mg alloying additions on the solidification path of the Al-Si system. Various techniques applied in this study resulted in some discrepancies in the results. For example, the FactSage computations, in general, resulted in 281 K to 286 K (8 °C to 13 °C) higher Al-Si eutectic temperatures than the ones recorded in the thermal analysis, which are also ~278 K (~5 °C) higher than those observed in the in situ neutron diffraction. None of the techniques can provide a definite value for the solidus temperature, as this is affected by the chosen calculation path [283 K to 303 K (10 °C to 30 °C) higher for equilibrium solidification vs non-equilibrium] for the FactSage analysis; and further complicated by evolution of secondary Al-Cu and Mg-Si phases that commenced at the end of solidification. An explanation of the discrepancies observed and complications associated with every technique applied is offered in the paper.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Chialvo, Ariel A.; Vlcek, Lukas
We explore the deconvolution of correlations for the interpretation of the microstructural behavior of aqueous electrolytes according to the neutron diffraction with isotopic substitution (NDIS) approach toward the experimental determination of ion coordination numbers of systems involving oxyanions, in particular, sulfate anions. We discuss the alluded interplay in the title of this presentation, emphasized the expectations, and highlight the significance of tackling the challenging NDIS experiments. Specifically, we focus on the potential occurrence of Nmore » $$2+\\atop{i}$$ ...SO$$2-\\atop{4}$$ pair formation, identify its signature, suggest novel ways either for the direct probe of the contact ion pair (CIP) strength and the subsequent correction of its effects on the measured coordination numbers, or for the determination of anion coordination numbers free of CIP contributions through the implementation of null-cation environments. For that purpose we perform simulations of NiSO 4 aqueous solutions at ambient conditions to generate the distribution functions required in the analysis (a) to identify the individual partial contributions to the total neutron-weighted distribution function, (b) to isolate and assess the contribution of N$$2+\\atop{i}$$ ...SO$$2-\\atop{4}$$ pair formation, (c) to test the accuracy of the neutron diffraction with isotope substitution based coordination calculations and X-ray diffraction based assumptions, and (d) to describe the water coordination around both the sulfur and oxygen sites of the sulfate anion. In conclusion, we finally discuss the strength of this interplay on the basis of the inherent molecular simulation ability to provide all pair correlation functions that fully characterize the system microstructure and allows us to “reconstruct” the eventual NDIS output, i.e., to take an atomistic “peek” (e.g., see Figure 1) at the local environment around the isotopically-labeled species before any experiment is ever attempted, and ultimately, to test the accuracy of the “measured” NDIS-based coordination numbers against the actual values by the “direct” counting.« less
Chialvo, Ariel A.; Vlcek, Lukas
2016-01-21
We explore the deconvolution of correlations for the interpretation of the microstructural behavior of aqueous electrolytes according to the neutron diffraction with isotopic substitution (NDIS) approach toward the experimental determination of ion coordination numbers of systems involving oxyanions, in particular, sulfate anions. We discuss the alluded interplay in the title of this presentation, emphasized the expectations, and highlight the significance of tackling the challenging NDIS experiments. Specifically, we focus on the potential occurrence of Nmore » $$2+\\atop{i}$$ ...SO$$2-\\atop{4}$$ pair formation, identify its signature, suggest novel ways either for the direct probe of the contact ion pair (CIP) strength and the subsequent correction of its effects on the measured coordination numbers, or for the determination of anion coordination numbers free of CIP contributions through the implementation of null-cation environments. For that purpose we perform simulations of NiSO 4 aqueous solutions at ambient conditions to generate the distribution functions required in the analysis (a) to identify the individual partial contributions to the total neutron-weighted distribution function, (b) to isolate and assess the contribution of N$$2+\\atop{i}$$ ...SO$$2-\\atop{4}$$ pair formation, (c) to test the accuracy of the neutron diffraction with isotope substitution based coordination calculations and X-ray diffraction based assumptions, and (d) to describe the water coordination around both the sulfur and oxygen sites of the sulfate anion. In conclusion, we finally discuss the strength of this interplay on the basis of the inherent molecular simulation ability to provide all pair correlation functions that fully characterize the system microstructure and allows us to “reconstruct” the eventual NDIS output, i.e., to take an atomistic “peek” (e.g., see Figure 1) at the local environment around the isotopically-labeled species before any experiment is ever attempted, and ultimately, to test the accuracy of the “measured” NDIS-based coordination numbers against the actual values by the “direct” counting.« less
Microstructural evolution of CANDU spacer material Inconel X-750 under in situ ion irradiation
NASA Astrophysics Data System (ADS)
Zhang, He Ken; Yao, Zhongwen; Judge, Colin; Griffiths, Malcolm
2013-11-01
Work on Inconel®Inconel® is a registered trademark of Special Metals Corporation that refers to a family of austenitic nickel-chromium-based superalloys.1 X-750 spacers removed from CANDU®CANDU® is a registered trademark of Atomic Energy of Canada Limited standing for ''CANada Deuterium Uranium''.2 reactors has shown that they become embrittled and there is development of many small cavities within the metal matrix and along grain boundaries. In order to emulate the neutron irradiation induced microstructural changes, heavy ion irradiations (1 MeV Kr2+ ions) were performed while observing the damage evolution using an intermediate voltage electron microscope (IVEM) operating at 200 kV. The irradiations were carried out at various temperatures 60-400 °C. The principal strengthening phase, γ‧, was disordered at low doses (˜0.06 dpa) during the irradiation. M23C6 carbides were found to be stable up to 5.4 dpa. Lattice defects consisted mostly of stacking fault tetrahedras (SFTs), 1/2<1 1 0> perfect loops and small 1/3<1 1 1> faulted Frank loops. The ratio of SFT number density to loop number density for each irradiation condition was found to be neither temperature nor dose dependent. Under the operation of the ion beam the SFT production was very rapid, with no evidence for further growth once formed, indicating that they probably formed as a result of cascade collapse in a single cascade. The number density of the defects was found to saturate at low dose (˜0.68 dpa). No cavities were observed regardless of the irradiation temperature between 60 °C and 400 °C for doses up to 5.4 dpa. In contrast, cavities have been observed after neutron irradiation in the same material at similar doses and temperatures indicating that helium, produce during neutron irradiation, may be essential for the nucleation and growth of cavities.
Local atomic and magnetic structure of dilute magnetic semiconductor ( Ba , K ) ( Zn , Mn ) 2 As 2
Frandsen, Benjamin A.; Gong, Zizhou; Terban, Maxwell W.; ...
2016-09-06
We studied the atomic and magnetic structure of the dilute ferromagnetic semiconductor system (Ba,K)(Zn,Mn) 2As 2 through atomic and magnetic pair distribution function analysis of temperature-dependent x-ray and neutron total scattering data. Furthermore, we detected a change in curvature of the temperature-dependent unit cell volume of the average tetragonal crystallographic structure at a temperature coinciding with the onset of ferromagnetic order. We also observed the existence of a well-defined local orthorhombic structure on a short length scale of ≲5Å, resulting in a rather asymmetrical local environment of the Mn and As ions. Finally, the magnetic PDF revealed ferromagnetic alignment ofmore » Mn spins along the crystallographic c axis, with robust nearest-neighbor ferromagnetic correlations that exist even above the ferromagnetic ordering temperature. Finally, we discuss these results in the context of other experiments and theoretical studies on this system.« less
Structure and mechanical behavior of heavily drawn pearlite and martensite in a high carbon steel
NASA Astrophysics Data System (ADS)
Shiota, Y.; Tomota, Y.; Moriai, A.; Kamiyama, T.
2005-10-01
Neutron diffraction measurements have revealed that cementite peaks disappear in a pearlite steel with drawing and that the residual intergranular stresses are generated. The diffraction profiles in a heavily drawn specimen suggest the tetoragonality with a small c/a in the ferrite matrix. Although cementite was hardly observed in the heavily drawn specimen, its c/a value determined by neutron diffraction and mechanical behavior are quite different from those of as-quenched martensite. The changes in hardness and c/a with annealing or tempering were also different between heavily drawn pearlite and marteniste. Hence, most of carbon atoms do not exist inside the ferrite lattice in the drawn pearlite and multi-scaled heterogeneous plastic deformation in pearlite seems to affect the asymmetry in the diffraction profile. Fracture behavior and hardness change with tempering is different in the two microstructures.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Garlea, Elena; Steiner, M. A.; Calhoun, C. A.
The α-phase transformation kinetics of as-cast U - 8 wt% Mo below the eutectoid temperature have been established by in situ neutron diffraction. α-phase weight fraction data acquired through Rietveld refinement at five different isothermal hold temperatures can be modeled accurately utilizing a simple Johnson-Mehl-Avrami-Kolmogorov impingement-based theory, and the results are validated by a corresponding evolution in the γ-phase lattice parameter during transformation that follows Vegard’s law. Neutron diffraction data is used to produce a detailed Time-Temperature-Transformation diagram that improves upon inconsistencies in the current literature, exhibiting a minimum transformation start time of 40 min at temperatures between 500 °Cmore » and 510 °C. Lastly, the transformation kinetics of U – 8 wt% Mo can vary significantly from as-cast conditions after extensive heat treatments, due to homogenization of the typical dendritic microstructure which possesses non-negligible solute segregation.« less
Panidi, Julianna; Paterson, Alexandra F.; Khim, Dongyoon; Fei, Zhuping; Han, Yang; Tsetseris, Leonidas; Vourlias, George; Patsalas, Panos A.; Heeney, Martin
2017-01-01
Abstract Improving the charge carrier mobility of solution‐processable organic semiconductors is critical for the development of advanced organic thin‐film transistors and their application in the emerging sector of printed electronics. Here, a simple method is reported for enhancing the hole mobility in a wide range of organic semiconductors, including small‐molecules, polymers, and small‐molecule:polymer blends, with the latter systems exhibiting the highest mobility. The method is simple and relies on admixing of the molecular Lewis acid B(C6F5)3 in the semiconductor formulation prior to solution deposition. Two prototypical semiconductors where B(C6F5)3 is shown to have a remarkable impact are the blends of 2,8‐difluoro‐5,11‐bis(triethylsilylethynyl)anthradithiophene:poly(triarylamine) (diF‐TESADT:PTAA) and 2,7‐dioctyl[1]‐benzothieno[3,2‐b][1]benzothiophene:poly(indacenodithiophene‐co‐benzothiadiazole) (C8‐BTBT:C16‐IDTBT), for which hole mobilities of 8 and 11 cm2 V−1 s−1, respectively, are obtained. Doping of the 6,13‐bis(triisopropylsilylethynyl)pentacene:PTAA blend with B(C6F5)3 is also shown to increase the maximum hole mobility to 3.7 cm2 V−1 s−1. Analysis of the single and multicomponent materials reveals that B(C6F5)3 plays a dual role, first acting as an efficient p‐dopant, and secondly as a microstructure modifier. Semiconductors that undergo simultaneous p‐doping and dopant‐induced long‐range crystallization are found to consistently outperform transistors based on the pristine materials. Our work underscores Lewis acid doping as a generic strategy towards high performance printed organic microelectronics. PMID:29375962
Characterization of silicon carbide and diamond detectors for neutron applications
NASA Astrophysics Data System (ADS)
Hodgson, M.; Lohstroh, A.; Sellin, P.; Thomas, D.
2017-10-01
The presence of carbon atoms in silicon carbide and diamond makes these materials ideal candidates for direct fast neutron detectors. Furthermore the low atomic number, strong covalent bonds, high displacement energies, wide bandgap and low intrinsic carrier concentrations make these semiconductor detectors potentially suitable for applications where rugged, high-temperature, low-gamma-sensitivity detectors are required, such as active interrogation, electronic personal neutron dosimetry and harsh environment detectors. A thorough direct performance comparison of the detection capabilities of semi-insulating silicon carbide (SiC-SI), single crystal diamond (D-SC), polycrystalline diamond (D-PC) and a self-biased epitaxial silicon carbide (SiC-EP) detector has been conducted and benchmarked against a commercial silicon PIN (Si-PIN) diode, in a wide range of alpha (Am-241), beta (Sr/Y-90), ionizing photon (65 keV to 1332 keV) and neutron radiation fields (including 1.2 MeV to 16.5 MeV mono-energetic neutrons, as well as neutrons from AmBe and Cf-252 sources). All detectors were shown to be able to directly detect and distinguish both the different radiation types and energies by using a simple energy threshold discrimination method. The SiC devices demonstrated the best neutron energy discrimination ratio (E\\max (n=5 MeV)/E\\max (n=1 MeV) ≈5), whereas a superior neutron/photon cross-sensitivity ratio was observed in the D-PC detector (E\\max (AmBe)/E\\max (Co-60) ≈16). Further work also demonstrated that the cross-sensitivity ratios can be improved through use of a simple proton-recoil conversion layer. Stability issues were also observed in the D-SC, D-PC and SiC-SI detectors while under irradiation, namely a change of energy peak position and/or count rate with time (often referred to as the polarization effect). This phenomenon within the detectors was non-debilitating over the time period tested (> 5 h) and, as such, stable operation was possible. Furthermore, the D-SC, self-biased SiC-EP and semi-insulating SiC detectors were shown to operate over the temperature range -60 °C to +100 °C.
Boron filled siloxane polymers for radiation shielding
NASA Astrophysics Data System (ADS)
Labouriau, Andrea; Robison, Tom; Shonrock, Clinton; Simmonds, Steve; Cox, Brad; Pacheco, Adam; Cady, Carl
2018-03-01
The purpose of the present work was to evaluate changes to structure-property relationships of 10B filled siloxane-based polymers when exposed to nuclear reactor radiation. Highly filled polysiloxanes were synthesized with the intent of fabricating materials that could shield high neutron fluences. The newly formulated materials consisted of cross-linked poly-diphenyl-methylsiloxane filled with natural boron and carbon nanofibers. This polymer was chosen because of its good thermal and chemical stabilities, as well as resistance to ionizing radiation thanks to the presence of aromatic groups in the siloxane backbone. Highly isotopically enriched 10B filler was used to provide an efficient neutron radiation shield, and carbon nanofibers were added to improve mechanical strength. This novel polymeric material was exposed in the Annular Core Research Reactor (ACRR) at Sandia National Labs to five different neutron/gamma fluxes consisting of very high neutron fluences within very short time periods. Thermocouples placed on the specimens recorded in-situ temperature changes during radiation exposure, which agreed well with those obtained from our MCNP simulations. Changes in the microstructural, thermal, chemical, and mechanical properties were evaluated by SEM, DSC, TGA, FT-IR NMR, solvent swelling, and uniaxial compressive load measurements. Our results demonstrate that these newly formulated materials are well-suitable to be used in applications that require exposure to different types of ionizing conditions that take place simultaneously.
Boron Filled Siloxane Polymers for Radiation Shielding
Labouriau, Andrea; Robison, Tom; Shonrock, Clinton Otto; ...
2017-09-01
The purpose of the present work was to evaluate changes to structure-property relationships of 10B filled siloxane-based polymers when exposed to nuclear reactor radiation. Highly filled polysiloxanes were synthesized with the intent of fabricating materials that could shield high neutron fluences. The newly formulated materials consisted of cross-linked poly-diphenyl-methylsiloxane filled with natural boron and carbon nanofibers. This polymer was chosen because of its good thermal and chemical stabilities, as well as resistance to ionizing radiation thanks to the presence of aromatic groups in the siloxane backbone. Highly isotopically enriched 10B filler was used to provide an efficient neutron radiation shield,more » and carbon nanofibers were added to improve mechanical strength. This novel polymeric material was exposed in the Annular Core Research Reactor (ACRR) at Sandia National Labs to five different neutron/gamma fluxes consisting of very high neutron fluences within very short time periods. Thermocouples placed on the specimens recorded in-situ temperature changes during radiation exposure, which agreed well with those obtained from our MCNP simulations. Changes in the microstructural, thermal, chemical, and mechanical properties were evaluated by SEM, DSC, TGA, FT-IR NMR, solvent swelling, and uniaxial compressive load measurements. In conclusion, our results demonstrate that these newly formulated materials are well-suitable to be used in applications that require exposure to different types of ionizing conditions that take place simultaneously.« less
Boron Filled Siloxane Polymers for Radiation Shielding
DOE Office of Scientific and Technical Information (OSTI.GOV)
Labouriau, Andrea; Robison, Tom; Shonrock, Clinton Otto
The purpose of the present work was to evaluate changes to structure-property relationships of 10B filled siloxane-based polymers when exposed to nuclear reactor radiation. Highly filled polysiloxanes were synthesized with the intent of fabricating materials that could shield high neutron fluences. The newly formulated materials consisted of cross-linked poly-diphenyl-methylsiloxane filled with natural boron and carbon nanofibers. This polymer was chosen because of its good thermal and chemical stabilities, as well as resistance to ionizing radiation thanks to the presence of aromatic groups in the siloxane backbone. Highly isotopically enriched 10B filler was used to provide an efficient neutron radiation shield,more » and carbon nanofibers were added to improve mechanical strength. This novel polymeric material was exposed in the Annular Core Research Reactor (ACRR) at Sandia National Labs to five different neutron/gamma fluxes consisting of very high neutron fluences within very short time periods. Thermocouples placed on the specimens recorded in-situ temperature changes during radiation exposure, which agreed well with those obtained from our MCNP simulations. Changes in the microstructural, thermal, chemical, and mechanical properties were evaluated by SEM, DSC, TGA, FT-IR NMR, solvent swelling, and uniaxial compressive load measurements. In conclusion, our results demonstrate that these newly formulated materials are well-suitable to be used in applications that require exposure to different types of ionizing conditions that take place simultaneously.« less
Study of non-stoichiometric BaSrTiFeO3 oxide dedicated to semiconductor gas sensors
NASA Astrophysics Data System (ADS)
Fasquelle, D.; Verbrugghe, N.; Deputier, S.
2016-11-01
Developing instrumentation systems compatible with the European RoHS directive (restriction of hazardous substances) to monitor our environment is of great interest for our society. Our research therefore aims at developing innovating integrated systems of detection dedicated to the characterization of various environmental exposures. These systems, which integrate new gas sensors containing lead-free oxides, are dedicated to the detection of flammable and toxic gases. We have firstly chosen to study semiconductor gas sensors implemented with lead-free oxides in view to develop RoHS devices. Therefore thick films deposited by spin-coating and screen-printing have been chosen for their robustness, ease to realize and ease to finally obtain cost-effective sensors. As crystalline defects and ionic vacancies are of great interest for gas detection, we have decided to study a non-stoichiometric composition of the BaSrTiFeO3 sensible oxide. Nonstoichiometric BaSrTiFeO3 lead-free oxide thick films were deposited by screen-printing on polycrystalline AFO3 substrates covered by a layer of Ag-Pd acting as bottom electrode. The physical characterizations have revealed a crystalline structure mainly composed of BaTiO3 pseudo-cubic phase and Ba4Ti12O27 monoclinic phase for the powder, and a porous microstructure for the thick films. When compared to a BSTF thick film with a stoichiometric composition, a notable increase in the BSTF dielectric constant value was observed when taking into account of a similar microstructure and grain size. The loss tangent mean value varies more softly for the non-stoichiometric BaSrTiFeO3 films than for the perovskite BSTF film as tanδ decreases from 0.45 to 0.04 when the frequency increases from 100 Hz to 1 MHz.
Investigation of dissimilar metal welds by energy-resolved neutron imaging
Tremsin, Anton S.; Ganguly, Supriyo; Meco, Sonia M.; ...
2016-06-09
A nondestructive study of the internal structure and compositional gradient of dissimilar metal-alloy welds through energy-resolved neutron imaging is described in this paper. The ability of neutrons to penetrate thick metal objects (up to several cm) provides a unique possibility to examine samples which are opaque to other conventional techniques. The presence of Bragg edges in the measured neutron transmission spectra can be used to characterize the internal residual strain within the samples and some microstructural features, e.g. texture within the grains, while neutron resonance absorption provides the possibility to map the degree of uniformity in mixing of the participatingmore » alloys and intermetallic formation within the welds. In addition, voids and other defects can be revealed by the variation of neutron attenuation across the samples. This paper demonstrates the potential of neutron energy-resolved imaging to measure all these characteristics simultaneously in a single experiment with sub-mm spatial resolution. Two dissimilar alloy welds are used in this study: Al autogenously laser welded to steel, and Ti gas metal arc welded (GMAW) to stainless steel using Cu as a filler alloy. The cold metal transfer variant of the GMAW process was used in joining the Ti to the stainless steel in order to minimize the heat input. The distributions of the lattice parameter and texture variation in these welds as well as the presence of voids and defects in the melt region are mapped across the welds. The depth of the thermal front in the Al–steel weld is clearly resolved and could be used to optimize the welding process. As a result, a highly textured structure is revealed in the Ti to stainless steel joint where copper was used as a filler wire. The limited diffusion of Ti into the weld region is also verified by the resonance absorption.« less
Investigation of dissimilar metal welds by energy-resolved neutron imaging
DOE Office of Scientific and Technical Information (OSTI.GOV)
Tremsin, Anton S.; Ganguly, Supriyo; Meco, Sonia M.
A nondestructive study of the internal structure and compositional gradient of dissimilar metal-alloy welds through energy-resolved neutron imaging is described in this paper. The ability of neutrons to penetrate thick metal objects (up to several cm) provides a unique possibility to examine samples which are opaque to other conventional techniques. The presence of Bragg edges in the measured neutron transmission spectra can be used to characterize the internal residual strain within the samples and some microstructural features, e.g. texture within the grains, while neutron resonance absorption provides the possibility to map the degree of uniformity in mixing of the participatingmore » alloys and intermetallic formation within the welds. In addition, voids and other defects can be revealed by the variation of neutron attenuation across the samples. This paper demonstrates the potential of neutron energy-resolved imaging to measure all these characteristics simultaneously in a single experiment with sub-mm spatial resolution. Two dissimilar alloy welds are used in this study: Al autogenously laser welded to steel, and Ti gas metal arc welded (GMAW) to stainless steel using Cu as a filler alloy. The cold metal transfer variant of the GMAW process was used in joining the Ti to the stainless steel in order to minimize the heat input. The distributions of the lattice parameter and texture variation in these welds as well as the presence of voids and defects in the melt region are mapped across the welds. The depth of the thermal front in the Al–steel weld is clearly resolved and could be used to optimize the welding process. As a result, a highly textured structure is revealed in the Ti to stainless steel joint where copper was used as a filler wire. The limited diffusion of Ti into the weld region is also verified by the resonance absorption.« less
Investigation of dissimilar metal welds by energy-resolved neutron imaging
Tremsin, Anton S.; Ganguly, Supriyo; Meco, Sonia M.; Pardal, Goncalo R.; Shinohara, Takenao; Feller, W. Bruce
2016-01-01
A nondestructive study of the internal structure and compositional gradient of dissimilar metal-alloy welds through energy-resolved neutron imaging is described in this paper. The ability of neutrons to penetrate thick metal objects (up to several cm) provides a unique possibility to examine samples which are opaque to other conventional techniques. The presence of Bragg edges in the measured neutron transmission spectra can be used to characterize the internal residual strain within the samples and some microstructural features, e.g. texture within the grains, while neutron resonance absorption provides the possibility to map the degree of uniformity in mixing of the participating alloys and intermetallic formation within the welds. In addition, voids and other defects can be revealed by the variation of neutron attenuation across the samples. This paper demonstrates the potential of neutron energy-resolved imaging to measure all these characteristics simultaneously in a single experiment with sub-mm spatial resolution. Two dissimilar alloy welds are used in this study: Al autogenously laser welded to steel, and Ti gas metal arc welded (GMAW) to stainless steel using Cu as a filler alloy. The cold metal transfer variant of the GMAW process was used in joining the Ti to the stainless steel in order to minimize the heat input. The distributions of the lattice parameter and texture variation in these welds as well as the presence of voids and defects in the melt region are mapped across the welds. The depth of the thermal front in the Al–steel weld is clearly resolved and could be used to optimize the welding process. A highly textured structure is revealed in the Ti to stainless steel joint where copper was used as a filler wire. The limited diffusion of Ti into the weld region is also verified by the resonance absorption. PMID:27504075
Neutron diffraction study of water freezing on aircraft engine combustor soot.
Tishkova, V; Demirdjian, B; Ferry, D; Johnson, M
2011-12-14
The study of the formation of condensation trails and cirrus clouds on aircraft emitted soot particles is important because of its possible effects on climate. In the present work we studied the freezing of water on aircraft engine combustor (AEC) soot particles under conditions of pressure and temperature similar to the upper troposphere. The microstructure of the AEC soot was found to be heterogeneous containing both primary particles of soot and metallic impurities (Fe, Cu, and Al). We also observed various surface functional groups such as oxygen-containing groups, including sulfate ions, that can act as active sites for water adsorption. Here we studied the formation of ice on the AEC soot particles by using neutron diffraction. We found that for low amount of adsorbed water, cooling even up to 215 K did not lead to the formation of hexagonal ice. Whereas, larger amount of adsorbed water led to the coexistence of liquid water (or amorphous ice) and hexagonal ice (I(h)); 60% of the adsorbed water was in the form of ice I(h) at 255 K. Annealing of the system led to the improvement of the crystal quality of hexagonal ice crystals as demonstrated from neutron diffraction.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Hosemann, Peter; Kaoumi, Djamel
Nuclear materials are an essential aspect of nuclear engineering. While great effort is spent on designing more advanced reactors or enhancing a reactor’s safety, materials have been the bottleneck of most new developments. The designs of new reactor concepts are driven by neutronic and thermodynamic aspects, leading to unusual coolants (liquid metal, liquid salt, gases), higher temperatures, and higher radiation doses than conventional light water reactors have. However, any (nuclear) engineering design must consider the materials used in the anticipated application in order to ever be realized. Designs which may look easy, simple and efficient considering thermodynamics or neutronic aspectsmore » can show their true difficulty in the materials area, which then prevents them from being deployed. In turn, the materials available are influencing the neutronic and thermodynamic designs and therefore must be considered from the beginning, requiring close collaborations between different aspects of nuclear engineering. If a particular design requires new materials, the licensing of the reactor must be considered, but licensing can be a costly and time consuming process that results in long lead times to realize true materials innovation.« less
Mechanical properties of neutron-irradiated model and commercial FeCrAl alloys
Field, Kevin G.; Briggs, Samuel A.; Sridharan, Kumar; ...
2017-03-28
The development and understanding of the mechanical properties of neutron-irradiated FeCrAl alloys is increasingly a critical need as these alloys continue to become more mature for nuclear reactor applications. This study focuses on the mechanical properties of model FeCrAl alloys and of a commercial FeCrAl alloy neutron-irradiated to up to 13.8 displacements per atom (dpa) at irradiation temperatures between 320 and 382 °C. Tensile tests were completed at room temperature and at 320 °C, and a subset of fractured tensile specimens was examined by scanning electron microscopy. Results showed typical radiation hardening and embrittlement indicative of high chromium ferritic alloysmore » with strong chromium composition dependencies at lower doses. At and above 7.0 dpa, the mechanical properties saturated for both the commercial and model FeCrAl alloys, although brittle cleavage fracture was observed at the highest dose in the model FeCrAl alloy with the highest chromium content (18 wt %). Finally, the results suggest the composition and microstructure of FeCrAl alloys plays a critical role in the mechanical response of FeCrAl alloys irradiated near temperatures relevant to light water reactors.« less
Radiation-induced amorphization of Langasite La3Ga5SiO14
NASA Astrophysics Data System (ADS)
Yao, Tiankai; Lu, Fengyuan; Zhang, Haifeng; Gong, Bowen; Ji, Wei; Zuo, Lei; Lian, Jie
2018-03-01
Single crystals of Langasite La3Ga5SiO14 (LGS) were irradiated by 1 MeV Kr2+ ions at temperature range from 298 to 898 K in order to simulate the damage effect of neutron radiation on Langasite, a candidate sensor material proposed as high temperature and pressure sensors in nuclear reactors. The microstructure evolution of LGS as functions of irradiation dose and temperature was followed by in-situ TEM observation through electron diffraction pattern. LGS is found to be sensitive to ion beam irradiation-induced amorphization from displacive heavy ions with a low critical dose of ∼0.5 ± 0.2 dpa (neutron fluence of (1.6 ± 0.6) × 1019 neutrons/cm2) at room temperature. The critical amorphization temperature, Tc, is determined to be 910 ± 10 K. Under simultaneous ionizing electron (300 keV, 45 nA) and displacive heavy ion irradiations (1-MeV Kr2+ and flux of 6.25 × 1011 ions/cm2·s), LGS displayed greater stability of crystal structure against amorphization, possibly due to the electron radiation-induced recovery of displacive damage by heavy ions.
Further Improvement of the RITS Code for Pulsed Neutron Bragg-edge Transmission Imaging
NASA Astrophysics Data System (ADS)
Sato, H.; Watanabe, K.; Kiyokawa, K.; Kiyanagi, R.; Hara, K. Y.; Kamiyama, T.; Furusaka, M.; Shinohara, T.; Kiyanagi, Y.
The RITS code is a unique and powerful tool for a whole Bragg-edge transmission spectrum fitting analysis. However, it has had two major problems. Therefore, we have proposed methods to overcome these problems. The first issue is the difference in the crystallite size values between the diffraction and the Bragg-edge analyses. We found the reason was a different definition of the crystal structure factor. It affects the crystallite size because the crystallite size is deduced from the primary extinction effect which depends on the crystal structure factor. As a result of algorithm change, crystallite sizes obtained by RITS drastically approached to crystallite sizes obtained by Rietveld analyses of diffraction data; from 155% to 110%. The second issue is correction of the effect of background neutrons scattered from a specimen. Through neutron transport simulation studies, we found that the background components consist of forward Bragg scattering, double backward Bragg scattering, and thermal diffuse scattering. RITS with the background correction function which was developed through the simulation studies could well reconstruct various simulated and experimental transmission spectra, but refined crystalline microstructural parameters were often distorted. Finally, it was recommended to reduce the background by improving experimental conditions.
Mechanical properties of neutron-irradiated model and commercial FeCrAl alloys
NASA Astrophysics Data System (ADS)
Field, Kevin G.; Briggs, Samuel A.; Sridharan, Kumar; Howard, Richard H.; Yamamoto, Yukinori
2017-06-01
The development and understanding of the mechanical properties of neutron-irradiated FeCrAl alloys is increasingly a critical need as these alloys continue to become more mature for nuclear reactor applications. This study focuses on the mechanical properties of model FeCrAl alloys and of a commercial FeCrAl alloy neutron-irradiated to up to 13.8 displacements per atom (dpa) at irradiation temperatures between 320 and 382 °C. Tensile tests were completed at room temperature and at 320 °C, and a subset of fractured tensile specimens was examined by scanning electron microscopy. Results showed typical radiation hardening and embrittlement indicative of high chromium ferritic alloys with strong chromium composition dependencies at lower doses. At and above 7.0 dpa, the mechanical properties saturated for both the commercial and model FeCrAl alloys, although brittle cleavage fracture was observed at the highest dose in the model FeCrAl alloy with the highest chromium content (18 wt %). The results suggest the composition and microstructure of FeCrAl alloys plays a critical role in the mechanical response of FeCrAl alloys irradiated near temperatures relevant to light water reactors.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Jung, Hee Joon; Edwards, Dan J.; Kurtz, Richard J.
An investigation of the influence of helium on damage evolution under neutron irradiation of an 11 at% Al, 19 at% Cr ODS ferritic PM2000 alloy was carried out in the High Flux Isotope Reactor (HFIR) using a novel in situ helium injection (ISHI) technique. Helium was injected into adjacent TEM discs from thermal neutron 59Ni(nth, 59Ni(nth,α) reactions in a thin NiAl layer. The PM2000 undergoes concurrent displacement damage from the high-energy neutrons. The ISHI technique allows direct comparisons of regions with and without high concentrations of helium since only the side coated with the NiAl experiences helium injection. The correspondingmore » microstructural and microchemical evolutions were characterized using both conventional and scanning transmission electron microscopy techniques. The evolutions observed include formation of dislocation loops and associated helium bubbles, precipitation of a variety of phases, amorphization of the Al2YO3 oxides (which also variously contained internal voids), and several manifestations of solute segregation. Notably, high concentrations of helium had a significant effect on many of these diverse phenomena. These results on PM2000 are compared and contrasted to the evolution of so-called nanostructured ferritic alloys (NFA).« less
NASA Astrophysics Data System (ADS)
Mo, Fangjie; Wu, Erdong; Zhang, Changsheng; Wang, Hong; Zhong, Zhengye; Zhang, Jian; Chen, Bo; Hofmann, Michael; Gan, Weimin; Sun, Guangai
2018-03-01
The present work attempts to reveal the correlation between the microstructural defects and residual stress in the single crystal nickel-based superalloy, both of which play the significant role on properties and performance. Neutron diffraction was employed to investigate the microstructural defects and residual stresses in a single crystal (SC) nickel-based superalloy, which was subjected to creeping under 220 MPa and 1000 °C for different times. The measured superlattice and fundamental lattice reflections confirm that the mismatch and tetragonal distortions with c/a > 1 exist in the SC superalloy. At the initially unstrained state, there exists the angular distortion between γ and γ' phases with small triaxial compressive stresses, ensuring the structural stability of the superalloy. After creeping, the tetragonal distortion for the γ phase is larger than that for the γ' phase. With increasing the creeping time, the mismatch between γ and γ' phases increases to the maximum, then decreases gradually and finally remains unchanged. The macroscopic residual stress shows a similar behavior with the mismatch, indicating the correlation between them. Based on the model of shear and dislocations, the evolution of microstructural defects and residual stress are reasonably explained. The effect of shear is dominant at the primary creep stage, which greatly enlarges the mismatch and the residual stress. The dislocations weaken the effect of shear for the further creep stage, resulting in the decrease of the mismatch and relaxation of the residual stress. Those findings add some helpful understanding into the microstructure-performance relationship in the SC nickel-based superalloy, which might provide the insight to materials design and applications.
The construction of a high resolution crystal backscattering spectrometer HERMES I
DOE Office of Scientific and Technical Information (OSTI.GOV)
Larese, J.Z.
There is a need in the United States for a state-of-the-art, cold-neutron, crystal backscattering spectrometer (CBS) designed to investigate the structure and dynamics of condensed matter systems by the simultaneous utilization of long wavelength elastic diffraction and high-energy-resolution inelastic scattering. Cold neutron spectroscopy with CBS-type instruments has already made many important contributions to the study of atomic and molecular diffusion in biomaterials, polymers, semiconductors, liquid crystals, superionic conductors and the like. Such instruments have also been invaluable for ultra high resolution investigations of the low-lying quantum tunneling processes that provide direct insight into the dynamical response of solids at themore » lowest energies. Until relatively recently, however, all such instruments were located at steady-state reactors. This proposal describes HERMES I (High Energy Resolution Machines I) a CBS intended for installation at the LANSCE pulsed neutron facility of Los Alamos National Laboratory. As explained in detail in the main text, the authors propose to construct an updated, high-performance CBS which incorporates neutron techniques developed during the decade since IRIS was built, i.e., improved supermirror technology, a larger area crystal analyzer and high efficiency wire gas detectors. The instrument is designed in such a way as to be readily adaptable to future upgrades. HERMES I, they believe, will substantially expand the range and flexibility of neutron investigations in the United States and open new and potentially fruitful directions for condensed matter exploration. This document describes a implementation plan with a direct cost range between $4.5 to 5.6 M and scheduled duration of 39--45 months for identified alternatives.« less
"Self-preservation" of CO(2) gas hydrates--surface microstructure and ice perfection.
Falenty, Andrzej; Kuhs, Werner F
2009-12-10
Gas hydrates can exhibit an anomalously slow decomposition outside their thermodynamic stability field; the phenomenon is called "self-preservation" and is mostly studied at ambient pressure and at temperatures between approximately 240 K and the melting point of ice. Here, we present a combination of in situ neutron diffraction studies, pVT work, and ex situ scanning electron microscopy (SEM) on CO(2) clathrates covering a much broader p-T field, stretching from 200 to 270 K and pressures between the hydrate stability limit and 0.6 kPa (6 mbar), a pressure far outside stability. The self-preservation regime above 240 K is confirmed over a broad pressure range and appears to be caused by the annealing of an ice cover formed in the initial hydrate decomposition. Another, previously unknown regime of the self-preservation exists below this temperature, extending however only over a rather narrow pressure range. In this case, the initial ice microstructure is dominated by a fast two-dimensional growth covering rapidly the clathrate surface. All observations lend strong support to the idea that the phenomenon of self-preservation is linked to the permeability of the ice cover governed by (1) the initial microstructure of ice and/or (2) the subsequent annealing of this ice coating. The interplay of the microstructure of newly formed ice and its annealing with the ongoing decomposition reaction leads to various decomposition paths and under certain conditions to a very pronounced preservation anomaly.
Substrate Temperature effect on the transition characteristics of Vanadium (IV) oxide
NASA Astrophysics Data System (ADS)
Yang, Tsung-Han; Wei, Wei; Jin, Chunming; Narayan, Jay
2008-10-01
One of the semiconductor to metal transition material (SMT) is Vanadium Oxide (VO2) which has a very sharp transition temperature close to 340 K as the crystal structure changes from monoclinic phase (semiconductor) into tetragonal phase (metal phase). We have grown high-quality epitaxial vanadium oxide (VO2) films on sapphire (0001) substrates by pulsed laser deposition for oxygen pressure 10-2torr and obtained interesting results without further annealing treatments. The epitaxial growth via domain matching epitaxy, where integral multiples of planes matched across the film-substrate interface. We were able to control the transition characteristics such as the sharpness (T), amplitude (A) of SMT transition and the width of thermal hysteresis (H) by altering the substrate temperature from 300 ^oC, 400 ^oC, 500 ^oC, and 600 ^oC. We use the XRD to identify the microstructure of film and measure the optical properties of film. Finally the transition characteristics is observed by the resistance with the increase of temperature by Van Der Pauw method from 25 to 100 ^oC to measure the electrical resistivity hystersis loop during the transition temperature.
The 2-6 semiconductor superlattices
NASA Astrophysics Data System (ADS)
Gunshor, R. L.; Otsuka, N.
1992-12-01
The first operational semiconductor diode lasers were demonstrated in the summer of 1991 independently by two U.S. groups, one at 3M and the other a team effort shared by Purdue and Brown Universities. As a result of the close collaboration between MBE and TEM groups within the grant, the structures for lasing and LED (as well as display device) operation were realized with the lowest defect concentrations ever reported for 2-6 structures grown on GaAs by MBE. The reduction of the dislocation levels resulted from an iterative process where the growth could be modified in response to the TEM analysis. The AFOSR funded interface studies have led to our appreciation of the electrical and microstructural considerations obtaining at 2-6/3-5 heterovalent interfaces. As a result the Purdue/Brown group has had equal success in making laser diodes with substrates of both doping types. The Purdue/Brown collaboration has obtained CW operations at 77 K as well as pulsed operation at room temperature using a Zn(S,Se)-based device configuration emitting in the blue (490 nm at room temperature).
Heterogeneous catalysis with lasers
NASA Astrophysics Data System (ADS)
George, T. F.
1986-06-01
Theoretical techniques have been developed to describe a variety of laser-induced molecular rate processes occurring at solid surfaces which are involved in heterogeneous catalysis. Such processes include adsorption, migration, chemical reactions and desorption. The role of surface phonons in laser-selective processes and laser heating has been analyzed. The importance of electronic degrees of freedom has been considered for semiconductor and metal substrates, with special emphasis on the laser excitation of surface states. Surface-modified photochemistry has also been investigated, where the effect of a metal surface on the resonance fluorescence spectrum of a laser-driven atom/molecule has been assessed by means of surface-dressed optical Bloch equations. It is seen that the spectrum can be significantly different from the gas-phase case. Two related gas-surface collision processes have also been studied. First, the feasibility of the formation of the electron-hole pairs in a semiconductor by vibrationally excited molecules has been explored. Second, charge transfer in ion-surface collisions has been examined for both one-electron and two-electron transfer processes. Work has been initiated on microstructures and rough structures, including clusters and surface gratings.
Spiking computation and stochastic amplification in a neuron-like semiconductor microstructure
DOE Office of Scientific and Technical Information (OSTI.GOV)
Samardak, A. S.; Laboratory of Thin Film Technologies, Far Eastern Federal University, Vladivostok 690950; Nogaret, A.
2011-05-15
We have demonstrated the proof of principle of a semiconductor neuron, which has dendrites, axon, and a soma and computes information encoded in electrical pulses in the same way as biological neurons. Electrical impulses applied to dendrites diffuse along microwires to the soma. The soma is the active part of the neuron, which regenerates input pulses above a voltage threshold and transmits them into the axon. Our concept of neuron is a major step forward because its spatial structure controls the timing of pulses, which arrive at the soma. Dendrites and axon act as transmission delay lines, which modify themore » information, coded in the timing of pulses. We have finally shown that noise enhances the detection sensitivity of the neuron by helping the transmission of weak periodic signals. A maximum enhancement of signal transmission was observed at an optimum noise level known as stochastic resonance. The experimental results are in excellent agreement with simulations of the FitzHugh-Nagumo model. Our neuron is therefore extremely well suited to providing feedback on the various mathematical approximations of neurons and building functional networks.« less
Self Organization in Compensated Semiconductors
NASA Astrophysics Data System (ADS)
Berezin, Alexander A.
2004-03-01
In partially compensated semiconductor (PCS) Fermi level is pinned to donor sub-band. Due to positional randomness and almost isoenergetic hoppings, donor-spanned electronic subsystem in PCS forms fluid-like highly mobile collective state. This makes PCS playground for pattern formation, self-organization, complexity emergence, electronic neural networks, and perhaps even for origins of life, bioevolution and consciousness. Through effects of impact and/or Auger ionization of donor sites, whole PCS may collapse (spinodal decomposition) into microblocks potentially capable of replication and protobiological activity (DNA analogue). Electronic screening effects may act in RNA fashion by introducing additional length scale(s) to system. Spontaneous quantum computing on charged/neutral sites becomes potential generator of informationally loaded microstructures akin to "Carl Sagan Effect" (hidden messages in Pi in his "Contact") or informational self-organization of "Library of Babel" of J.L. Borges. Even general relativity effects at Planck scale (R.Penrose) may affect the dynamics through (e.g.) isotopic variations of atomic mass and local density (A.A.Berezin, 1992). Thus, PCS can serve as toy model (experimental and computational) at interface of physics and life sciences.
Thermoelectric properties of In and I doped PbTe
NASA Astrophysics Data System (ADS)
Bali, Ashoka; Chetty, Raju; Sharma, Amit; Rogl, Gerda; Heinrich, Patrick; Suwas, Satyam; Misra, Dinesh Kumar; Rogl, Peter; Bauer, Ernst; Mallik, Ramesh Chandra
2016-11-01
A systematic study of structural, microstructural, and thermoelectric properties of bulk PbTe doped with indium (In) alone and co-doped with both indium and iodine (I) has been done. X-ray diffraction results showed all the samples to be of single phase. Scanning electron microscopy (SEM) results revealed the particle sizes to be in the range of micrometers, while high resolution transmission electron microscopy was used to investigate distinct microstructural features such as interfaces, grain boundaries, and strain field domains. Hall measurement at 300 K revealed the carrier concentration ˜1019 cm-3 showing the degenerate nature which was further seen in the electrical resistivity of samples, which increased with rising temperature. Seebeck coefficient indicated that all samples were n-type semiconductors with electrons as the majority carriers throughout the temperature range. A maximum power factor ˜25 μW cm-1 K-2 for all In doped samples and Pb0.998In0.003Te1.000I0.003 was observed at 700 K. Doping leads to a reduction in the total thermal conductivity due to enhanced phonon scattering by mass fluctuations and distinct microstructure features such as interfaces, grain boundaries, and strain field domains. The highest zT of 1.12 at 773 K for In doped samples and a zT of 1.1 at 770 K for In and I co-doped samples were obtained.
Theoretical limits of the multistacked 1D and 2D microstructured inorganic solar cells
NASA Astrophysics Data System (ADS)
Yengel, Emre; Karaagac, Hakan; VJ, Logeeswaran; Islam, M. Saif
2015-09-01
Recent studies in monocrystalline semiconductor solar cells are focused on mechanically stacking multiple cells from different materials to increase the power conversion efficiency. Although, the results show promising increase in the device performance, the cost remains as the main drawback. In this study, we calculated the theoretical limits of multistacked 1D and 2D microstructered inorganic monocrstalline solar cells. This system is studied for Si and Ge material pair. The results show promising improvements in the surface reflection due to enhanced light trapping caused by photon-microstructures interactions. The theoretical results are also supported with surface reflection and angular dependent power conversion efficiency measurements of 2D axial microwall solar cells. We address the challenge of cost reduction by proposing to use our recently reported mass-manufacturable fracture-transfer- printing method which enables the use of a monocrystalline substrate wafer for repeated fabrication of devices by consuming only few microns of materials in each layer of devices. We calculated thickness dependent power conversion efficiencies of multistacked Si/Ge microstructured solar cells and found the power conversion efficiency to saturate at 26% with a combined device thickness of 30 μm. Besides having benefits of fabricating low-cost, light weight, flexible, semi-transparent, and highly efficient devices, the proposed fabrication method is applicable for other III-V materials and compounds to further increase the power conversion efficiency above 35% range.
Thickness and microstructure effects in the optical and electrical properties of silver thin films
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ding, Guowen, E-mail: gding@intermolecular.com; Clavero, César; Schweigert, Daniel
The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C), with a value of 59 ± 2 μΩ cm ⋅more » fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.« less
Triggering Mechanism for Neutron Induced Single-Event Burnout in Power Devices
NASA Astrophysics Data System (ADS)
Shoji, Tomoyuki; Nishida, Shuichi; Hamada, Kimimori
2013-04-01
Cosmic ray neutrons can trigger catastrophic failures in power devices. It has been reported that parasitic transistor action causes single-event burnout (SEB) in power metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). However, power diodes do not have an inherent parasitic transistor. In this paper, we describe the mechanism triggering SEB in power diodes for the first time using transient device simulation. Initially, generated electron-hole pairs created by incident recoil ions generate transient current, which increases the electron density in the vicinity of the n-/n+ boundary. The space charge effect of the carriers leads to an increase in the strength of the electric field at the n-/n+ boundary. Finally, the onset of impact ionization at the n-/n+ boundary can trigger SEB. Furthermore, this failure is closely related to diode secondary breakdown. It was clarified that the impact ionization at the n-/n+ boundary is a key point of the mechanism triggering SEB in power devices.
Electrospun Polymer Fibers for Electronic Applications
Luzio, Alessandro; Canesi, Eleonora Valeria; Bertarelli, Chiara; Caironi, Mario
2014-01-01
Nano- and micro- fibers of conjugated polymer semiconductors are particularly interesting both for applications and for fundamental research. They allow an investigation into how electronic properties are influenced by size confinement and chain orientation within microstructures that are not readily accessible within thin films. Moreover, they open the way to many applications in organic electronics, optoelectronics and sensing. Electro-spinning, the technique subject of this review, is a simple method to effectively form and control conjugated polymer fibers. We provide the basics of the technique and its recent advancements for the formation of highly conducting and high mobility polymer fibers towards their adoption in electronic applications. PMID:28788493
Solid-State Division progress report for period ending March 31, 1983
DOE Office of Scientific and Technical Information (OSTI.GOV)
Green, P.H.; Watson, D.M.
1983-09-01
Progress and activities are reported on: theoretical solid-state physics (surfaces; electronic, vibrational, and magnetic properties; particle-solid interactions; laser annealing), surface and near-surface properties of solids (surface, plasma-material interactions, ion implantation and ion-beam mixing, pulsed-laser and thermal processing), defects in solids (radiation effects, fracture, impurities and defects, semiconductor physics and photovoltaic conversion), transport properties of solids (fast-ion conductors, superconductivity, mass and charge transport in materials), neutron scattering (small-angle scattering, lattice dynamics, magnetic properties, structure and instrumentation), and preparation and characterization of research materials (growth and preparative methods, nuclear waste forms, special materials). (DLC)
New Icosahedral Boron Carbide Semiconductors
NASA Astrophysics Data System (ADS)
Echeverria Mora, Elena Maria
Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto-resistance, however, these results suggest practical device applications, especially as such effects are manifested in nanoscale films with facile fabrication. Overall, the greater negative magneto-resistance, when undoped with an aromatic, suggests a material with more defects and is consistent with a shorter carrier lifetime.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Cummins, Dustin Ray; Vogel, Sven C.; Hollis, Kendall Jon
2016-10-18
This report uses neutron diffraction to investigate the crystal phase composition of uranium-molybdenum alloy foils (U-10Mo) for the CONVERT MP-1 Reactor Conversion Project, and determines the effect on alpha-uranium contamination following the deposition of a Zr metal diffusion layer by various methods: plasma spray deposition of Zr powders at LANL and hot co-rolling with Zr foils at BWXT. In summary, there is minimal decomposition of the gamma phase U-10Mo foil to alpha phase contamination following both plasma spraying and hot co-rolling. The average unit cell volume, i.e. lattice spacing, of the Zr layer can be mathematically extracted from the diffractionmore » data; co-rolled Zr matches well with literature values of bulk Zr, while plasma sprayed Zr shows a slight increase in the lattice spacing, indicative of interstitial oxygen in the lattice. Neutron diffraction is a beneficial alternative to conventional methods of phase composition, i.e. x ray diffraction (XRD) and destructive metallography. XRD has minimal penetration depth in high atomic number materials, particularly uranium, and can only probe the first few microns of the fuel plate; neutrons pass completely through the foil, allowing for bulk analysis of the foil composition and no issues with addition of cladding layers, as in the final, aluminum-clad reactor fuel plates. Destructive metallography requires skilled technicians, cutting of the foil into small sections, hazardous etching conditions, long polishing and microscopy times, etc.; the neutron diffraction system has an automated sample loader and can fit larger foils, so there is minimal analysis preparation; the total spectrum acquisition time is ~ 1 hour per sample. The neutron diffraction results are limited by spectra refinement/calculation times and the availability of the neutron beam source. In the case of LANSCE at Los Alamos, the beam operates ~50% of the year. Following the lessons learned from these preliminary results, optimizations to the process and analysis can be made, and neutron diffraction can become a viable and efficient technique for gamma/alpha phase composition determination for nuclear fuels.« less
Advances in Neutron Radiography: Application to Additive Manufacturing Inconel 718
Bilheux, Hassina Z; Song, Gian; An, Ke; ...
2016-01-01
Reactor-based neutron radiography is a non-destructive, non-invasive characterization technique that has been extensively used for engineering materials such as inspection of components, evaluation of porosity, and in-operando observations of engineering parts. Neutron radiography has flourished at reactor facilities for more than four decades and is relatively new to accelerator-based neutron sources. Recent advances in neutron source and detector technologies, such as the Spallation Neutron Source (SNS) at the Oak Ridge National Laboratory (ORNL) in Oak Ridge, TN, and the microchannel plate (MCP) detector, respectively, enable new contrast mechanisms using the neutron scattering Bragg features for crystalline information such as averagemore » lattice strain, crystalline plane orientation, and identification of phases in a neutron radiograph. Additive manufacturing (AM) processes or 3D printing have recently become very popular and have a significant potential to revolutionize the manufacturing of materials by enabling new designs with complex geometries that are not feasible using conventional manufacturing processes. However, the technique lacks standards for process optimization and control compared to conventional processes. Residual stresses are a common occurrence in materials that are machined, rolled, heat treated, welded, etc., and have a significant impact on a component s mechanical behavior and durability. They may also arise during the 3D printing process, and defects such as internal cracks can propagate over time as the component relaxes after being removed from its build plate (the base plate utilized to print materials on). Moreover, since access to the AM material is possible only after the component has been fully manufactured, it is difficult to characterize the material for defects a priori to minimize expensive re-runs. Currently, validation of the AM process and materials is mainly through expensive trial-and-error experiments at the component level, whereas in conventional processes the level of confidence in predictive computational modeling is high enough to allow process and materials optimization through computational approaches. Thus, there is a clear need for non-destructive characterization techniques and for the establishment of processing- microstructure databases that can be used for developing and validating predictive modeling tools for AM.« less
n-Channel semiconductor materials design for organic complementary circuits.
Usta, Hakan; Facchetti, Antonio; Marks, Tobin J
2011-07-19
Organic semiconductors have unique properties compared to traditional inorganic materials such as amorphous or crystalline silicon. Some important advantages include their adaptability to low-temperature processing on flexible substrates, low cost, amenability to high-speed fabrication, and tunable electronic properties. These features are essential for a variety of next-generation electronic products, including low-power flexible displays, inexpensive radio frequency identification (RFID) tags, and printable sensors, among many other applications. Accordingly, the preparation of new materials based on π-conjugated organic molecules or polymers has been a central scientific and technological research focus over the past decade. Currently, p-channel (hole-transporting) materials are the leading class of organic semiconductors. In contrast, high-performance n-channel (electron-transporting) semiconductors are relatively rare, but they are of great significance for the development of plastic electronic devices such as organic field-effect transistors (OFETs). In this Account, we highlight the advances our team has made toward realizing moderately and highly electron-deficient n-channel oligomers and polymers based on oligothiophene, arylenediimide, and (bis)indenofluorene skeletons. We have synthesized and characterized a "library" of structurally related semiconductors, and we have investigated detailed structure-property relationships through optical, electrochemical, thermal, microstructural (both single-crystal and thin-film), and electrical measurements. Our results reveal highly informative correlations between structural parameters at various length scales and charge transport properties. We first discuss oligothiophenes functionalized with perfluoroalkyl and perfluoroarene substituents, which represent the initial examples of high-performance n-channel semiconductors developed in this project. The OFET characteristics of these compounds are presented with an emphasis on structure-property relationships. We then examine the synthesis and properties of carbonyl-functionalized oligomers, which constitute second-generation n-channel oligothiophenes, in both vacuum- and solution-processed FETs. These materials have high carrier mobilities and good air stability. In parallel, exceptionally electron-deficient cyano-functionalized arylenediimide derivatives are discussed as early examples of thermodynamically air-stable, high-performance n-channel semiconductors; they exhibit record electron mobilities of up to 0.64 cm(2)/V·s. Furthermore, we provide an overview of highly soluble ladder-type macromolecular semiconductors as OFET components, which combine ambient stability with solution processibility. A high electron mobility of 0.16 cm(2)/V·s is obtained under ambient conditions for solution-processed films. Finally, examples of polymeric n-channel semiconductors with electron mobilities as high as 0.85 cm(2)/V·s are discussed; these constitute an important advance toward fully printed polymeric electronic circuitry. Density functional theory (DFT) computations reveal important trends in molecular physicochemical and semiconducting properties, which, when combined with experimental data, shed new light on molecular charge transport characteristics. Our data provide the basis for a fundamental understanding of charge transport in high-performance n-channel organic semiconductors. Moreover, our results provide a road map for developing functional, complementary organic circuitry, which requires combining p- and n-channel transistors.
Hollow glass for insulating layers
NASA Astrophysics Data System (ADS)
Merticaru, Andreea R.; Moagar-Poladian, Gabriel
1999-03-01
Common porous materials, some of which will be considered in the chapters of this book, include concrete, paper, ceramics, clays, porous semiconductors, chromotography materials, and natural materials like coral, bone, sponges, rocks and shells. Porous materials can also be reactive, such as in charcoal gasification, acid rock dissolution, catalyst deactivation and concrete. This study continues the investigations about the properties of, so-called, hollow glass. In this paper is presented a computer simulation approach in which the thermo-mechanical behavior of a 3D microstructure is directly computed. In this paper a computer modeling approach of porous glass is presented. One way to test the accuracy of the reconstructed microstructures is to computed their physical properties and compare to experimental measurement on equivalent systems. In this view, we imagine a new type of porous type of glass designed as buffer layer in multilayered printed boards in ICs. Our glass is a variable material with a variable pore size and surface area. The porosity could be tailored early from the deposition phases that permitting us to keep in a reasonable balance the dielectric constant and thermal conductivity.
Atomically-thin molecular layers for electrode modification of organic transistors
NASA Astrophysics Data System (ADS)
Gim, Yuseong; Kang, Boseok; Kim, Bongsoo; Kim, Sun-Guk; Lee, Joong-Hee; Cho, Kilwon; Ku, Bon-Cheol; Cho, Jeong Ho
2015-08-01
Atomically-thin molecular layers of aryl-functionalized graphene oxides (GOs) were used to modify the surface characteristics of source-drain electrodes to improve the performances of organic field-effect transistor (OFET) devices. The GOs were functionalized with various aryl diazonium salts, including 4-nitroaniline, 4-fluoroaniline, or 4-methoxyaniline, to produce several types of GOs with different surface functional groups (NO2-Ph-GO, F-Ph-GO, or CH3O-Ph-GO, respectively). The deposition of aryl-functionalized GOs or their reduced derivatives onto metal electrode surfaces dramatically enhanced the electrical performances of both p-type and n-type OFETs relative to the performances of OFETs prepared without the GO modification layer. Among the functionalized rGOs, CH3O-Ph-rGO yielded the highest hole mobility of 0.55 cm2 V-1 s-1 and electron mobility of 0.17 cm2 V-1 s-1 in p-type and n-type FETs, respectively. Two governing factors: (1) the work function of the modified electrodes and (2) the crystalline microstructures of the benchmark semiconductors grown on the modified electrode surface were systematically investigated to reveal the origin of the performance improvements. Our simple, inexpensive, and scalable electrode modification technique provides a significant step toward optimizing the device performance by engineering the semiconductor-electrode interfaces in OFETs.Atomically-thin molecular layers of aryl-functionalized graphene oxides (GOs) were used to modify the surface characteristics of source-drain electrodes to improve the performances of organic field-effect transistor (OFET) devices. The GOs were functionalized with various aryl diazonium salts, including 4-nitroaniline, 4-fluoroaniline, or 4-methoxyaniline, to produce several types of GOs with different surface functional groups (NO2-Ph-GO, F-Ph-GO, or CH3O-Ph-GO, respectively). The deposition of aryl-functionalized GOs or their reduced derivatives onto metal electrode surfaces dramatically enhanced the electrical performances of both p-type and n-type OFETs relative to the performances of OFETs prepared without the GO modification layer. Among the functionalized rGOs, CH3O-Ph-rGO yielded the highest hole mobility of 0.55 cm2 V-1 s-1 and electron mobility of 0.17 cm2 V-1 s-1 in p-type and n-type FETs, respectively. Two governing factors: (1) the work function of the modified electrodes and (2) the crystalline microstructures of the benchmark semiconductors grown on the modified electrode surface were systematically investigated to reveal the origin of the performance improvements. Our simple, inexpensive, and scalable electrode modification technique provides a significant step toward optimizing the device performance by engineering the semiconductor-electrode interfaces in OFETs. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr03307a
Huang, Wei; Guo, Peijun; Zeng, Li; Li, Ran; Wang, Binghao; Wang, Gang; Zhang, Xinan; Chang, Robert P H; Yu, Junsheng; Bedzyk, Michael J; Marks, Tobin J; Facchetti, Antonio
2018-04-25
Charge transport and film microstructure evolution are investigated in a series of polyethylenimine (PEI)-doped (0.0-6.0 wt%) amorphous metal oxide (MO) semiconductor thin film blends. Here, PEI doping generality is broadened from binary In 2 O 3 to ternary (e.g., In+Zn in IZO, In+Ga in IGO) and quaternary (e.g., In+Zn+Ga in IGZO) systems, demonstrating the universality of this approach for polymer electron doping of MO matrices. Systematic comparison of the effects of various metal ions on the electronic transport and film microstructure of these blends are investigated by combined thin-film transistor (TFT) response, AFM, XPS, XRD, X-ray reflectivity, and cross-sectional TEM. Morphological analysis reveals that layered MO film microstructures predominate in PEI-In 2 O 3 , but become less distinct in IGO and are not detectable in IZO and IGZO. TFT charge transport measurements indicate a general coincidence of a peak in carrier mobility (μ peak ) and overall TFT performance at optimal PEI doping concentrations. Optimal PEI loadings that yield μ peak values depend not only on the MO elemental composition but also, equally important, on the metal atomic ratios. By investigating the relationship between the MO energy levels and PEI doping by UPS, it is concluded that the efficiency of PEI electron-donation is highly dependent on the metal oxide matrix work function in cases where film morphology is optimal, as in the IGO compositions. The results of this investigation demonstrate the broad generality and efficacy of PEI electron doping applied to electronically functional metal oxide systems and that the resulting film microstructure, morphology, and energy level modifications are all vital to understanding charge transport in these amorphous oxide blends.
NASA Astrophysics Data System (ADS)
Nicholson, D. E.; Benafan, O.; Padula, S. A.; Clausen, B.; Vaidyanathan, R.
2018-01-01
Loading path dependencies and control mode effects in polycrystalline shape memory NiTi were investigated using in situ neutron and synchrotron X-ray diffraction performed during mechanical cycling and thermal cycling at constant strain. Strain-controlled, isothermal, reverse loading (to ± 4%) and stress-controlled, isothermal, cyclic loading (to ± 400 MPa for up to ten cycles) at room temperature demonstrated that the preferred martensite variants selected correlated directly with the macroscopic uniaxial strain and did not correlate with the compressive or tensile state of stress. During cyclic loading (up to ten cycles), no significant cycle-to-cycle evolution of the variant microstructure corresponding to a given strain was observed, despite changes in the slope of the stress-strain response with each cycle. Additionally, thermal cycling (to above and below the phase transformation) under constant strain (up to 2% tensile strain) showed that the martensite variant microstructure correlated directly with strain and did not evolve following thermal cycling, despite relaxation of stress in both martensite and austenite phases. Results are presented in the context of variant reorientation and detwinning processes in martensitic NiTi, the fundamental thermoelastic nature of such processes and the ability of the variant microstructure to accommodate irreversible deformation processes.
Comparison between different techniques applied to quartz CPO determination in granitoid mylonites
NASA Astrophysics Data System (ADS)
Fazio, Eugenio; Punturo, Rosalda; Cirrincione, Rosolino; Kern, Hartmut; Wenk, Hans-Rudolph; Pezzino, Antonino; Goswami, Shalini; Mamtani, Manish
2016-04-01
Since the second half of the last century, several techniques have been adopted to resolve the crystallographic preferred orientation (CPO) of major minerals constituting crustal and mantle rocks. To this aim, many efforts have been made to increase the accuracy of such analytical devices as well as to progressively reduce the time needed to perform microstructural analysis. It is worth noting that many of these microstructural studies deal with quartz CPO because of the wide occurrence of this mineral phase in crustal rocks as well as its quite simple chemical composition. In the present work, four different techniques were applied to define CPOs of dynamically recrystallized quartz domains from naturally deformed rocks collected from a ductile crustal scale shear zone in order to compare their advantages and limitation. The selected Alpine shear zone is located in the Aspromonte Massif (Calabrian Peloritani Orogen, southern Italy) representing granitoid lithotypes. The adopted methods span from "classical" universal stage (US), to image analysis technique (CIP), electron back-scattered diffraction (EBSD), and time of flight neutron diffraction (TOF). When compared, bulk texture pole figures obtained by means of these different techniques show a good correlation. Advances in analytical techniques used for microstructural investigations are outlined by discussing results of quartz CPO that are presented in this study.
Report on the Synchrotron Characterization of U-Mo and U-Zr Alloys and the Modeling Results
DOE Office of Scientific and Technical Information (OSTI.GOV)
Okuniewski, Maria A.; Ganapathy, Varsha; Hamilton, Brenden
2016-09-01
ABSTRACT Uranium-molybdenum (U-Mo) and uranium-zirconium (U-Zr) are two promising fuel candidates for nuclear transmutation reactors which burn long-lived minor actinides and fission products within fast spectrum reactors. The objectives of this research are centered on understanding the early stages of fuel performance through the examination of the irradiation induced microstructural changes in U-Zr and U-Mo alloys subjected to low neutron fluences. Specimens that were analyzed include those that were previously irradiated in the Advanced Test Reactor at INL. This most recent work has focused on a sub-set of the irradiated specimens, specifically U-Zr and U-Mo alloys that were irradiated tomore » 0.01 dpa at temperatures ranging from (150-800oC). These specimens were analyzed with two types of synchrotron techniques, including X-ray absorption fine structure and X-ray diffraction. These techniques provide non-destructive microstructural analysis, including phase identification and quantitation, lattice parameters, crystallite sizes, as well as bonding, structure, and chemistry. Preliminary research has shown changes in the phase fractions, crystallite sizes, and lattice parameters as a function of irradiation and temperature. Future data analyses will continue to explore these microstructural changes.« less
NASA Astrophysics Data System (ADS)
Nicholson, D. E.; Benafan, O.; Padula, S. A.; Clausen, B.; Vaidyanathan, R.
2018-03-01
Loading path dependencies and control mode effects in polycrystalline shape memory NiTi were investigated using in situ neutron and synchrotron X-ray diffraction performed during mechanical cycling and thermal cycling at constant strain. Strain-controlled, isothermal, reverse loading (to ± 4%) and stress-controlled, isothermal, cyclic loading (to ± 400 MPa for up to ten cycles) at room temperature demonstrated that the preferred martensite variants selected correlated directly with the macroscopic uniaxial strain and did not correlate with the compressive or tensile state of stress. During cyclic loading (up to ten cycles), no significant cycle-to-cycle evolution of the variant microstructure corresponding to a given strain was observed, despite changes in the slope of the stress-strain response with each cycle. Additionally, thermal cycling (to above and below the phase transformation) under constant strain (up to 2% tensile strain) showed that the martensite variant microstructure correlated directly with strain and did not evolve following thermal cycling, despite relaxation of stress in both martensite and austenite phases. Results are presented in the context of variant reorientation and detwinning processes in martensitic NiTi, the fundamental thermoelastic nature of such processes and the ability of the variant microstructure to accommodate irreversible deformation processes.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Odette, G. Robert
Reactor pressure vessel embrittlement may limit the lifetime of light water reactors (LWR). Embrittlement is primarily caused by formation of nano-scale precipitates, which cause hardening and a subsequent increase in the ductile-to-brittle transition temperature of the steel. While the effect of Cu has historically been the largest research focus of RPV embrittlement, there is increasing evidence that Mn, Ni and Si are likely to have a large effect at higher fluence, where Mn-Ni-Si precipitates can form, even in the absence of Cu. Therefore, extending RPV lifetimes will require a thorough understanding of both precipitation and embrittlement at higher fluences thanmore » have ever been observed in a power reactor. To address this issue, test reactors that irradiate materials at higher neutron fluxes than power reactors are used. These experiments at high neutron flux can reach extended life neutron fluences in only months or several years. The drawback of these test irradiations is that they add additional complexity to interpreting the data, as the irradiation flux also plays a role into both precipitate formation and irradiation hardening and embrittlement. This report focuses on developing a database of both microstructure and mechanical property data to better understand the effect of flux. In addition, a previously developed model that enables the comparison of data taken over a range of neutron flux is discussed.« less
Takajo, Shigehiro; Brown, Donald William; Clausen, Bjorn; ...
2018-04-30
In this study, we report the characterization of a 304L stainless steel cylindrical projectile produced by additive manufacturing. The projectile was compressively deformed using a Taylor Anvil Gas Gun, leading to a huge strain gradient along the axis of the deformed cylinder. Spatially resolved neutron diffraction measurements on the HIgh Pressure Preferred Orientation time-of-flight diffractometer (HIPPO) and Spectrometer for Materials Research at Temperature and Stress diffractometer (SMARTS) beamlines at the Los Alamos Neutron Science CEnter (LANSCE) with Rietveld and single-peak analysis were used to quantitatively evaluate the volume fractions of the α, γ, and ε phases as well as residualmore » strain and texture. The texture of the γ phase is consistent with uniaxial compression, while the α texture can be explained by the Kurdjumov–Sachs relationship from the γ texture after deformation. This indicates that the material first deformed in the γ phase and subsequently transformed at larger strains. The ε phase was only found in volumes close to the undeformed material with a texture connected to the γ texture by the Shoji–Nishiyama orientation relationship. This allows us to conclude that the ε phase occurs as an intermediate phase at lower strain, and is superseded by the α phase when strain increases further. We found a proportionality between the root-mean-squared microstrain of the γ phase, dominated by the dislocation density, with the α volume fraction, consistent with strain-induced martensite α formation. In conclusion, knowledge of the sample volume with the ε phase from the neutron diffraction analysis allowed us to identify the ε phase by electron back scatter diffraction analysis, complementing the neutron diffraction analysis with characterization on the grain level.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Takajo, Shigehiro; Brown, Donald William; Clausen, Bjorn
In this study, we report the characterization of a 304L stainless steel cylindrical projectile produced by additive manufacturing. The projectile was compressively deformed using a Taylor Anvil Gas Gun, leading to a huge strain gradient along the axis of the deformed cylinder. Spatially resolved neutron diffraction measurements on the HIgh Pressure Preferred Orientation time-of-flight diffractometer (HIPPO) and Spectrometer for Materials Research at Temperature and Stress diffractometer (SMARTS) beamlines at the Los Alamos Neutron Science CEnter (LANSCE) with Rietveld and single-peak analysis were used to quantitatively evaluate the volume fractions of the α, γ, and ε phases as well as residualmore » strain and texture. The texture of the γ phase is consistent with uniaxial compression, while the α texture can be explained by the Kurdjumov–Sachs relationship from the γ texture after deformation. This indicates that the material first deformed in the γ phase and subsequently transformed at larger strains. The ε phase was only found in volumes close to the undeformed material with a texture connected to the γ texture by the Shoji–Nishiyama orientation relationship. This allows us to conclude that the ε phase occurs as an intermediate phase at lower strain, and is superseded by the α phase when strain increases further. We found a proportionality between the root-mean-squared microstrain of the γ phase, dominated by the dislocation density, with the α volume fraction, consistent with strain-induced martensite α formation. In conclusion, knowledge of the sample volume with the ε phase from the neutron diffraction analysis allowed us to identify the ε phase by electron back scatter diffraction analysis, complementing the neutron diffraction analysis with characterization on the grain level.« less
Koyanagi, Takaaki; Katoh, Yutai
2017-07-04
Silicon carbide (SiC) fiber–reinforced SiC matrix (SiC/SiC) composites are being actively investigated for use in accident-tolerant core structures of light water reactors (LWRs). Owing to the limited number of irradiation studies previously conducted at LWR-coolant temperature, this paper examined SiC/SiC composites following neutron irradiation at 230–340 °C to 2.0 and 11.8 dpa in the High Flux Isotope Reactor. The investigated materials were chemical vapor infiltrated (CVI) SiC/SiC composites with three different reinforcement fibers. The fiber materials were monolayer pyrolytic carbon (PyC) -coated Hi-Nicalon™ Type-S (HNS), Tyranno™ SA3 (SA3), and SCS-Ultra™ (SCS) SiC fibers. The irradiation resistance of these composites wasmore » investigated based on flexural behavior, dynamic Young's modulus, swelling, and microstructures. There was no notable mechanical properties degradation of the irradiated HNS and SA3 SiC/SiC composites except for reduction of the Young's moduli by up to 18%. The microstructural stability of these composites supported the absence of degradation. In addition, no progressive swelling from 2.0 to 11.8 dpa was confirmed for these composites. On the other hand, the SCS composite showed significant mechanical degradation associated with cracking within the fiber. Finally, this study determined that SiC/SiC composites with HNS or SA3 SiC/SiC fibers, a PyC interphase, and a CVI SiC matrix retain their properties beyond the lifetime dose for LWR fuel cladding at the relevant temperature.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Koyanagi, Takaaki; Katoh, Yutai
Silicon carbide (SiC) fiber–reinforced SiC matrix (SiC/SiC) composites are being actively investigated for use in accident-tolerant core structures of light water reactors (LWRs). Owing to the limited number of irradiation studies previously conducted at LWR-coolant temperature, this paper examined SiC/SiC composites following neutron irradiation at 230–340 °C to 2.0 and 11.8 dpa in the High Flux Isotope Reactor. The investigated materials were chemical vapor infiltrated (CVI) SiC/SiC composites with three different reinforcement fibers. The fiber materials were monolayer pyrolytic carbon (PyC) -coated Hi-Nicalon™ Type-S (HNS), Tyranno™ SA3 (SA3), and SCS-Ultra™ (SCS) SiC fibers. The irradiation resistance of these composites wasmore » investigated based on flexural behavior, dynamic Young's modulus, swelling, and microstructures. There was no notable mechanical properties degradation of the irradiated HNS and SA3 SiC/SiC composites except for reduction of the Young's moduli by up to 18%. The microstructural stability of these composites supported the absence of degradation. In addition, no progressive swelling from 2.0 to 11.8 dpa was confirmed for these composites. On the other hand, the SCS composite showed significant mechanical degradation associated with cracking within the fiber. Finally, this study determined that SiC/SiC composites with HNS or SA3 SiC/SiC fibers, a PyC interphase, and a CVI SiC matrix retain their properties beyond the lifetime dose for LWR fuel cladding at the relevant temperature.« less
NASA Astrophysics Data System (ADS)
Koyanagi, Takaaki; Katoh, Yutai
2017-10-01
Silicon carbide (SiC) fiber-reinforced SiC matrix (SiC/SiC) composites are being actively investigated for use in accident-tolerant core structures of light water reactors (LWRs). Owing to the limited number of irradiation studies previously conducted at LWR-coolant temperature, this study examined SiC/SiC composites following neutron irradiation at 230-340 °C to 2.0 and 11.8 dpa in the High Flux Isotope Reactor. The investigated materials were chemical vapor infiltrated (CVI) SiC/SiC composites with three different reinforcement fibers. The fiber materials were monolayer pyrolytic carbon (PyC) -coated Hi-Nicalon™ Type-S (HNS), Tyranno™ SA3 (SA3), and SCS-Ultra™ (SCS) SiC fibers. The irradiation resistance of these composites was investigated based on flexural behavior, dynamic Young's modulus, swelling, and microstructures. There was no notable mechanical properties degradation of the irradiated HNS and SA3 SiC/SiC composites except for reduction of the Young's moduli by up to 18%. The microstructural stability of these composites supported the absence of degradation. In addition, no progressive swelling from 2.0 to 11.8 dpa was confirmed for these composites. On the other hand, the SCS composite showed significant mechanical degradation associated with cracking within the fiber. This study determined that SiC/SiC composites with HNS or SA3 SiC/SiC fibers, a PyC interphase, and a CVI SiC matrix retain their properties beyond the lifetime dose for LWR fuel cladding at the relevant temperature.
Absence of dynamic strain aging in an additively manufactured nickel-base superalloy.
Beese, Allison M; Wang, Zhuqing; Stoica, Alexandru D; Ma, Dong
2018-05-25
Dynamic strain aging (DSA), observed macroscopically as serrated plastic flow, has long been seen in nickel-base superalloys when plastically deformed at elevated temperatures. Here we report the absence of DSA in Inconel 625 made by additive manufacturing (AM) at temperatures and strain rates where DSA is present in its conventionally processed counterpart. This absence is attributed to the unique AM microstructure of finely dispersed secondary phases (carbides, N-rich phases, and Laves phase) and textured grains. Based on experimental observations, we propose a dislocation-arrest model to elucidate the criterion for DSA to occur or to be absent as a competition between dislocation pipe diffusion and carbide-carbon reactions. With in situ neutron diffraction studies of lattice strain evolution, our findings provide a new perspective for mesoscale understanding of dislocation-solute interactions and their impact on work-hardening behaviors in high-temperature alloys, and have important implications for tailoring thermomechanical properties by microstructure control via AM.
Multi-modal STEM-based tomography of HT-9 irradiated in FFTF
DOE Office of Scientific and Technical Information (OSTI.GOV)
Field, Kevin G.; Eftink, Benjamin Paul; Saleh, Tarik A.
Under irradiation, point defects and defect clusters can agglomerate to form extended two and three dimensional (2D/3D) defects. The formation of defects can be synergistic in nature with one defect or defect-type influencing the formation and/or evolution of another. The resul is a need exists to perform advanced characterization where microstructures are accurately reproduced in 3D. Here, HT-9 neutron irradiated in the FFTF was used to evaluate the ability of multi-tilt STEM-based tomography to reproduce the fine-scale radiation-induced microstructure. High-efficiency STEM-EDS was used to provide both structural and chemical information during the 3D reconstruction. The results show similar results tomore » a previous two-tilt tomography study on the same material; the α' phase is denuded around the Ni-Si-Mn rich G-phase and cavities. It is concluded both tomography reconstruction techniques are readily viable and could add significant value to the advanced characterization capabilities for irradiated materials.« less
Nguyen, Huu-Dat; Assumma, Luca; Judeinstein, Patrick; Mercier, Regis; Porcar, Lionel; Jestin, Jacques; Iojoiu, Cristina; Lyonnard, Sandrine
2017-01-18
Proton-conducting multiblock polysulfones bearing perfluorosulfonic acid side chains were designed to encode nanoscale phase-separation, well-defined hydrophilic/hydrophobic interfaces, and optimized transport properties. Herein, we show that the superacid side chains yield highly ordered morphologies that can be tailored by best compromising ion-exchange capacity and block lengths. The obtained microstructures were extensively characterized by small-angle neutron scattering (SANS) over an extended range of hydration. Peculiar swelling behaviors were evidenced at two different scales and attributed to the dilution of locally flat polymer particles. We evidence the direct correlation between the quality of interfaces, the topology and connectivity of ionic nanodomains, the block superstructure long-range organization, and the transport properties. In particular, we found that the proton conductivity linearly depends on the microscopic expansion of both ionic and block domains. These findings indicate that neat nanoscale phase-separation and block-induced long-range connectivity can be optimized by designing aromatic ionomers with controlled architectures to improve the performances of polymer electrolyte membranes.
Multi-material optoelectronic fiber devices
NASA Astrophysics Data System (ADS)
Sorin, F.; Yan, Wei; Volpi, Marco; Page, Alexis G.; Nguyen Dang, Tung; Qu, Y.
2017-05-01
The recent ability to integrate materials with different optical and optoelectronic properties in prescribed architectures within flexible fibers is enabling novel opportunities for advanced optical probes, functional surfaces and smart textiles. In particular, the thermal drawing process has known a series of breakthroughs in recent years that have expanded the range of materials and architectures that can be engineered within uniform fibers. Of particular interest in this presentation will be optoelectronic fibers that integrate semiconductors electrically addressed by conducting materials. These long, thin and flexible fibers can intercept optical radiation, localize and inform on a beam direction, detect its wavelength and even harness its energy. They hence constitute ideal candidates for applications such as remote and distributed sensing, large-area optical-detection arrays, energy harvesting and storage, innovative health care solutions, and functional fabrics. To improve performance and device complexity, tremendous progresses have been made in terms of the integrated semiconductor architectures, evolving from large fiber solid-core, to sub-hundred nanometer thin-films, nano-filaments and even nanospheres. To bridge the gap between the optoelectronic fiber concept and practical applications however, we still need to improve device performance and integration. In this presentation we will describe the materials and processing approaches to realize optoelectronic fibers, as well as give a few examples of demonstrated systems for imaging as well as light and chemical sensing. We will then discuss paths towards practical applications focusing on two main points: fiber connectivity, and improving the semiconductor microstructure by developing scalable approaches to make fiber-integrated single-crystal nanowire based devices.
NASA Astrophysics Data System (ADS)
Jackson, Michael J.; Jackson, Biyun L.; Goorsky, Mark S.
2011-11-01
Sulfur passivation and subsequent wafer-bonding treatments are demonstrated for III-V semiconductor applications using GaAs-GaAs direct wafer-bonded structures. Two different sulfur passivation processes are addressed. A dry sulfur passivation method that utilizes elemental sulfur vapor activated by ultraviolet light in vacuum is compared with aqueous sulfide and native-oxide-etch treatments. The electrical conductivity across a sulfur-treated 400 - °C-bonded n-GaAs/n-GaAs interface significantly increased with a short anneal (1-2 min) at elevated temperatures (500-600 °C). Interfaces treated with the NH4OH oxide etch, on the other hand, exhibited only mild improvement in accordance with previously published studies in this area. TEM and STEM images revealed similar interfacial microstructure changes with annealing for both sulfur-treated and NH4OH interfaces, whereby some areas have direct semiconductor-semiconductor contact without any interfacial layer. Fitting the observed temperature dependence of zero-bias conductance using a model for tunneling through a grain boundary reveals that the addition of sulfur at the interface lowered the interfacial energy barrier by 0.2 eV. The interface resistance for these sulfur-treated structures is 0.03 Ω.cm at room temperature. These results emphasize that sulfur-passivation techniques reduce interface states that otherwise limit the implementation of wafer bonding for high-efficiency solar cells and other devices.
Investigations on neutron irradiated 3D carbon fibre reinforced carbon composite material
NASA Astrophysics Data System (ADS)
Venugopalan, Ramani; Alur, V. D.; Patra, A. K.; Acharya, R.; Srivastava, D.
2018-04-01
As against conventional graphite materials carbon-carbon (C/C) composite materials are now being contemplated as the promising candidate materials for the high temperature and fusion reactor owing to their high thermal conductivity and high thermal resistance, better mechanical/thermal properties and irradiation stability. The current need is for focused research on novel carbon materials for future new generation nuclear reactors. The advantage of carbon-carbon composite is that the microstructure and the properties can be tailor made. The present study encompasses the irradiation of 3D carbon composite prepared by reinforcement using PAN carbon fibers for nuclear application. The carbon fiber reinforced composite was subjected to neutron irradiation in the research reactor DHRUVA. The irradiated samples were characterized by Differential Scanning Calorimetry (DSC), small angle neutron scattering (SANS), XRD and Raman spectroscopy. The DSC scans were taken in argon atmosphere under a linear heating program. The scanning was carried out at temperature range from 30 °C to 700 °C at different heating rates in argon atmosphere along with reference as unirradiated carbon composite. The Wigner energy spectrum of irradiated composite showed two peaks corresponding to 200 °C and 600 °C. The stored energy data for the samples were in the range 110-170 J/g for temperature ranging from 30 °C to 700 °C. The Wigner energy spectrum of irradiated carbon composite did not indicate spontaneous temperature rise during thermal annealing. Small angle neutron scattering (SANS) experiments have been carried out to investigate neutron irradiation induced changes in porosity of the composite samples. SANS data were recorded in the scattering wave vector range of 0.17 nm-1 to 3.5 nm-1. Comparison of SANS profiles of irradiated and unirradiated samples indicates significant change in pore morphology. Pore size distributions of the samples follow power law size distribution with different exponent. Narrowing of SANS profile of the irradiated sample indicates creation of significant number of larger pores due to neutron irradiation.
Future Development of Dense Ferroelectric Memories for Space Applications
NASA Technical Reports Server (NTRS)
Philpy, Stephen C.; Derbenwick, Gary F.
2001-01-01
The availability of high density, radiation tolerant, nonvolatile memories is critical for space applications. Ferroelectric memories, when fabricated with radiation hardened complementary metal oxide semiconductors (CMOS), can be manufactured and packaged to provide high density replacements for Flash memory, which is not radiation tolerant. Previous work showed ferroelectric memory cells to be resistant to single event upsets and proton irradiation, and ferroelectric storage capacitors to be resistant to neutron exposure. In addition to radiation hardness, the fast programming times, virtually unlimited endurance, and low voltage, low power operation make ferroelectric memories ideal for space missions. Previously, a commercial double level metal 64-kilobit ferroelectric memory was presented. Although the capabilities of radiation hardened wafer fabrication facilities lag behind those of the most modern commercial wafer fabrication facilities, several paths to achieving radiation tolerant, dense ferroelectric memories are emerging. Both short and long term solutions are presented in this paper. Although worldwide major semiconductor companies are introducing commercial ferroelectric memories, funding limitations must be overcome to proceed with the development of high density, radiation tolerant ferroelectric memories.
Proton irradiation damage of an annealed Alloy 718 beam window
Bach, H. T.; Anderoglu, O.; Saleh, T. A.; ...
2015-04-01
Mechanical testing and microstructural analysis was performed on an Alloy 718 window that was in use at the Los Alamos Neutron Science Center (LANSCE) Isotope Production Facility (IPF) for approximately 5 years. It was replaced as part of the IPF preventive maintenance program. The window was transported to the Wing 9 hot cells at the Chemical and Metallurgical Research (CMR) LANL facility, visually inspected and 3-mm diameter samples were trepanned from the window for mechanical testing and microstructural analysis. Shear punch testing and optical metallography was performed at the CMR hot cells. The 1-mm diameter shear punch disks were cutmore » into smaller samples to further reduce radiation exposure dose rate using Focus Ion Beam (FIB) and microstructure changes were analyzed using a Transmission Electron Microscopy (TEM). Irradiation doses were determined to be ~0.2–0.7 dpa (edge) to 11.3 dpa (peak of beam intensity) using autoradiography and MCNPX calculations. The corresponding irradiation temperatures were calculated to be ~34–120 °C with short excursion to be ~47–220 °C using ANSYS. Mechanical properties and microstructure analysis results with respect to calculated dpa and temperatures show that significant work hardening occurs but useful ductility still remains. The hardening in the lowest dose region (~0.2–0.7 dpa) was the highest and attributed to the formation of γ" precipitates and irradiation defect clusters/bubbles whereas the hardening in the highest dose region (~11.3 dpa) was lower and attributed mainly to irradiation defect clusters and some thermal annealing.« less
A dual-phase microstructural approach to damage and fracture of Ti3SiC2/SiC joints
NASA Astrophysics Data System (ADS)
Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.
2018-02-01
The microcracking mechanisms responsible for Ti3SiC2/SiC joint damage observed at the macroscopic scale after neutron irradiation experiments are investigated in detail. A dual-phase microstructural approach to damage and fracture of Ti3SiC2/SiC joints is developed that uses a finely discretized two-phase domain based on a digital image of an actual microstructure involving embedded Ti3SiC2 and SiC phases. The behaviors of SiC and Ti3SiC2 in the domain are described by the continuum damage mechanics (CDM) model reported in Nguyen et al., J. Nucl. Mater., 2017, 495:504-515. This CDM model describes microcracking damage in brittle ceramics caused by thermomechanical loading and irradiation-induced swelling. The dual-phase microstructural model is applied to predict the microcracking mechanisms occurring in a typical Ti3SiC2/SiC joint subjected to heating to 800 °C followed by irradiation-induced swelling at this temperature and cooling to room temperature after the applied swelling has reached the maximum swelling levels observed in the experiments for SiC and Ti3SiC2. The model predicts minor damage of the joint after heating but significant microcracking in the SiC phase and along the boundaries between SiC and Ti3SiC2 as well as along the bonding joint during irradiation-induced swelling and cooling to room temperature. These predictions qualitatively agree with the limited experimental observations of joint damage at this irradiation temperature.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Biswas, Somjeet, E-mail: somjeetbiswas@gmail.com; Department of Materials Engineering, Indian Institute of Science, Bangalore 560012; Laboratory of Excellence on Design of Alloy Metals for low-mAss Structures
Investigations on texture evolution and through-thickness texture heterogeneity during equal channel angular pressing (ECAP) of pure magnesium at 200 °C, 150 °C and room temperature (RT) was carried out by neutron, high energy synchrotron X-ray and electron back-scatter diffraction. Irrespective of the ECAP temperature, a distinctive basal (B) and pyramidal (C{sub 2}) II type of fibers forms. The texture differs in the bottom 1 mm portion, where the B-fiber is shifted ~ 55° due to negative shear attributed to friction. - Highlights: • ECAP of magnesium was carried out at 200 °C, 150 °C and room temperature. • Microstructure andmore » micro-texture evolution was examined using EBSD in FEG–SEM. • Bulk-texture was studied using neutron diffraction and compared with micro-texture. • Through thickness texture heterogeneity was observed by synchrotron radiation. • Changes in these parameters with respect to deformation temperature are discussed.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Brown, D. W.; Adams, D. P.; Balogh, L.
In situ neutron diffraction measurements were completed for this study during tensile and compressive deformation of stainless steel 304L additively manufactured (AM) using a high power directed energy deposition process. Traditionally produced wrought 304L material was also studied for comparison. The AM material exhibited roughly 200 MPa higher flow stress relative to the wrought material. Crystallite size, crystallographic texture, dislocation density, and lattice strains were all characterized to understand the differences in the macroscopic mechanical behavior. The AM material’s initial dislocation density was about 10 times that of the wrought material, and the flow strength of both materials obeyed themore » Taylor equation, indicating that the AM material’s increased yield strength was primarily due to greater dislocation density. Finally, a ~50 MPa flow strength tension/compression asymmetry was observed in the AM material, and several potential causes were examined.« less
Brown, D. W.; Adams, D. P.; Balogh, L.; ...
2017-10-10
In situ neutron diffraction measurements were completed for this study during tensile and compressive deformation of stainless steel 304L additively manufactured (AM) using a high power directed energy deposition process. Traditionally produced wrought 304L material was also studied for comparison. The AM material exhibited roughly 200 MPa higher flow stress relative to the wrought material. Crystallite size, crystallographic texture, dislocation density, and lattice strains were all characterized to understand the differences in the macroscopic mechanical behavior. The AM material’s initial dislocation density was about 10 times that of the wrought material, and the flow strength of both materials obeyed themore » Taylor equation, indicating that the AM material’s increased yield strength was primarily due to greater dislocation density. Finally, a ~50 MPa flow strength tension/compression asymmetry was observed in the AM material, and several potential causes were examined.« less
Guillen, Donna Post; Harris, William H.
2016-05-11
A metal matrix composite (MMC) material comprised of hafnium aluminide (Al3Hf) intermetallic particles in an aluminum matrix has been identified as a promising material for fast-flux irradiation testing applications. This material can filter thermal neutrons while simultaneously providing high rates of conductive cooling for experiment capsules. Our purpose is to investigate effects of Hf-Al material composition and neutron irradiation on thermophysical properties, which were measured before and after irradiation. When performing differential scanning calorimetry (DSC) on the irradiated specimens, a large exotherm corresponding to material annealment was observed. Thus, a test procedure was developed to perform DSC and laser flashmore » analysis (LFA) to obtain the specific heat and thermal diffusivity of pre- and post-annealment specimens. This paper presents the thermal properties for three states of the MMC material: (1) unirradiated, (2) as-irradiated, and (3) irradiated and annealed. Microstructure-property relationships were obtained for the thermal conductivity. These relationships are useful for designing components from this material to operate in irradiation environments. Furthermore, the ability of this material to effectively conduct heat as a function of temperature, volume fraction Al 3Hf, radiation damage and annealing is assessed using the MOOSE suite of computational tools.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bahadur, Jitendra; Radlinski, Andrzej P.; Melnichenko, Yuri B.
We applied small-angle neutron scattering (SANS) and ultrasmall-angle neutron scattering (USANS) techniques to study the microstructure of several New Albany shales of different maturity. It has been established that the total porosity decreases with maturity and increases somewhat for post-mature samples. A new method of SANS data analysis was developed, which allows the extraction of information about the size range and number density of micropores from the relatively flat scattering intensity observed in the limit of the large scattering vector Q. Macropores and significant number of mesopores are surface fractals, and their structure can be described in terms of themore » polydisperse spheres (PDSP) model. The model-independent Porod invariant method was employed to estimate total porosity, and the results were compared with the PDSP model results. It has been demonstrated that independent evaluation of incoherent background is crucial for accurate interpretation of the scattering data in the limit of large Q-values. Moreover, pore volumes estimated by the N 2 and CO 2 adsorption, as well as via the mercury intrusion technique, have been compared with those measured by SANS/USANS, and possible reasons for the observed discrepancies are discussed.« less
FIRST-PRINCIPLES CALCULATIONS OF INTRINSIC DEFECTS AND Mg TRANSMUTANTS IN 3C-SiC
DOE Office of Scientific and Technical Information (OSTI.GOV)
Hu, Shenyang Y.; Setyawan, Wahyu; Van Ginhoven, Renee M.
2013-09-25
Silicon carbide (SiC) possesses many desirable attributes for applications in high-temperature and neutron radiation environments. These attributes include excellent dimensional and thermodynamic stability, low activation, high strength, and high thermal conductivity. Therefore, SiC based materials draw broad attention as structural materials for the first wall (FW) and blanket in fusion power plants. Under the severe high-energy neutron environment of D-T fusion systems, SiC suffers significant transmutation resulting in both gaseous and metallic transmutants. Recent calculations by Sawan, et al. [2] predict that at a fast neutron dose of ~100 dpa, there will be about 0.5 at% Mg generated in SiCmore » through nuclear transmutation. Other transmutation products, including 0.15 at% Al, 0.2 at% Be and 2.2 at% He, also emerge. Formation and migration energies of point defects in 3C-SiC have been widely investigated using density functional theory (DFT). However, the properties of defects associated with transmutants are currently not well understood. Fundamental understanding of where the transmutation products go and how they affect microstructure evolution of SiC composites will help to predict property evolution and performance of SiC-based materials in fusion reactors.« less
Comparative study of the magnetic properties of La3Ni2B‧O9 for B‧ = Nb, Taor Sb
NASA Astrophysics Data System (ADS)
Chin, Chun-Mann; Battle, Peter D.; Blundell, Stephen J.; Hunter, Emily; Lang, Franz; Hendrickx, Mylène; Paria Sena, Robert; Hadermann, Joke
2018-02-01
Polycrystalline samples of La3Ni2NbO9 and La3Ni2TaO9 have been characterised by X-ray and neutron diffraction, electron microscopy, magnetometry and muon spin relaxation (μSR); the latter technique was also applied to La3Ni2SbO9. On the length scale of a neutron diffraction experiment, the six-coordinate sites of the monoclinic perovskite structure are occupied in a 1:1 ordered manner by Ni and a random ⅓Ni/⅔B‧ mixture. Electron microscopy demonstrated that this 1:1 ordering is maintained over microscopic distances, although diffuse scattering indicative of short-range ordering on the mixed site was observed. No magnetic Bragg scattering was observed in neutron diffraction patterns collected from La3Ni2B‧O9 (B‧ = Nb or Ta) at 5 K although in each case μSR identified the presence of static spins below 30 K. Magnetometry showed that La3Ni2NbO9 behaves as a spin glass below 29 K but significant short-range interactions are present in La3Ni2TaO9 below 85 K. The contrasting properties of these compounds are discussed in terms of their microstructure.
Bahadur, Jitendra; Radlinski, Andrzej P.; Melnichenko, Yuri B.; ...
2014-12-17
We applied small-angle neutron scattering (SANS) and ultrasmall-angle neutron scattering (USANS) techniques to study the microstructure of several New Albany shales of different maturity. It has been established that the total porosity decreases with maturity and increases somewhat for post-mature samples. A new method of SANS data analysis was developed, which allows the extraction of information about the size range and number density of micropores from the relatively flat scattering intensity observed in the limit of the large scattering vector Q. Macropores and significant number of mesopores are surface fractals, and their structure can be described in terms of themore » polydisperse spheres (PDSP) model. The model-independent Porod invariant method was employed to estimate total porosity, and the results were compared with the PDSP model results. It has been demonstrated that independent evaluation of incoherent background is crucial for accurate interpretation of the scattering data in the limit of large Q-values. Moreover, pore volumes estimated by the N 2 and CO 2 adsorption, as well as via the mercury intrusion technique, have been compared with those measured by SANS/USANS, and possible reasons for the observed discrepancies are discussed.« less
Three-dimensional hydrogen microscopy using a high-energy proton probe
NASA Astrophysics Data System (ADS)
Dollinger, G.; Reichart, P.; Datzmann, G.; Hauptner, A.; Körner, H.-J.
2003-01-01
It is a challenge to measure two-dimensional or three-dimensional (3D) hydrogen profiles on a micrometer scale. Quantitative hydrogen analyses of micrometer resolution are demonstrated utilizing proton-proton scattering at a high-energy proton microprobe. It has more than an-order-of-magnitude better position resolution and in addition higher sensitivity than any other technique for 3D hydrogen analyses. This type of hydrogen imaging opens plenty room to characterize microstructured materials, and semiconductor devices or objects in microbiology. The first hydrogen image obtained with a 10 MeV proton microprobe shows the hydrogen distribution of the microcapillary system being present in the wing of a mayfly and demonstrates the potential of the method.
Neutral- and Multi-Colored Semitransparent Perovskite Solar Cells.
Lee, Kyu-Tae; Guo, L Jay; Park, Hui Joon
2016-04-11
In this review, we summarize recent works on perovskite solar cells with neutral- and multi-colored semitransparency for building-integrated photovoltaics and tandem solar cells. The perovskite solar cells exploiting microstructured arrays of perovskite "islands" and transparent electrodes-the latter of which include thin metallic films, metal nanowires, carbon nanotubes, graphenes, and transparent conductive oxides for achieving optical transparency-are investigated. Moreover, the perovskite solar cells with distinctive color generation, which are enabled by engineering the band gap of the perovskite light-harvesting semiconductors with chemical management and integrating with photonic nanostructures, including microcavity, are discussed. We conclude by providing future research directions toward further performance improvements of the semitransparent perovskite solar cells.
NASA Astrophysics Data System (ADS)
Galyautdinov, M. F.; Nuzhdin, V. I.; Fattakhov, Ya. V.; Farrakhov, B. F.; Valeev, V. F.; Osin, Yu. N.; Stepanov, A. L.
2016-02-01
We propose to form optical diffractive elements on the surface of poly(methyl methacrylate) (PMMA) by implanting the polymer with silver ions ( E = 30 keV; D = 5.0 × 1014 to 1.5 × 1017 ion/cm2; I = 2 μA/cm2) through a nickel grid (mask). Ion implantation leads to the nucleation and growth of silver nanoparticles in unmasked regions of the polymer. The formation of periodic surface microstructures during local sputtering of the polymer by incident ions was monitored using an optical microscope. The diffraction efficiency of obtained gratings is demonstrated under conditions of their probing with semiconductor laser radiation in the visible spectral range.
Visible Light Photocatalysis via CdS/ TiO 2 Nanocomposite Materials
Srinivasan, Sesha S.; Wade, Jeremy; Stefanakos, Elias K.
2006-01-01
Nmore » anostructured colloidal semiconductors with heterogeneous photocatalytic behavior have drawn considerable attention over the past few years. This is due to their large surface area, high redox potential of the photogenerated charge carriers, and selective reduction/oxidation of different classes of organic compounds. In the present paper, we have carried out a systematic synthesis of nanostructured CdS- TiO 2 via reverse micelle process. The structural and microstructural characterizations of the as-prepared CdS- TiO 2 nanocomposites are determined using XRD and SEM-EDS techniques. The visible light assisted photocatalytic performance is monitored by means of degradation of phenol in water suspension.« less
Energy-tunable sources of entangled photons: a viable concept for solid-state-based quantum relays.
Trotta, Rinaldo; Martín-Sánchez, Javier; Daruka, Istvan; Ortix, Carmine; Rastelli, Armando
2015-04-17
We propose a new method of generating triggered entangled photon pairs with wavelength on demand. The method uses a microstructured semiconductor-piezoelectric device capable of dynamically reshaping the electronic properties of self-assembled quantum dots (QDs) via anisotropic strain engineering. Theoretical models based on k·p theory in combination with finite-element calculations show that the energy of the polarization-entangled photons emitted by QDs can be tuned in a range larger than 100 meV without affecting the degree of entanglement of the quantum source. These results pave the way towards the deterministic implementation of QD entanglement resources in all-electrically-controlled solid-state-based quantum relays.
Energy-Tunable Sources of Entangled Photons: A Viable Concept for Solid-State-Based Quantum Relays
NASA Astrophysics Data System (ADS)
Trotta, Rinaldo; Martín-Sánchez, Javier; Daruka, Istvan; Ortix, Carmine; Rastelli, Armando
2015-04-01
We propose a new method of generating triggered entangled photon pairs with wavelength on demand. The method uses a microstructured semiconductor-piezoelectric device capable of dynamically reshaping the electronic properties of self-assembled quantum dots (QDs) via anisotropic strain engineering. Theoretical models based on k .p theory in combination with finite-element calculations show that the energy of the polarization-entangled photons emitted by QDs can be tuned in a range larger than 100 meV without affecting the degree of entanglement of the quantum source. These results pave the way towards the deterministic implementation of QD entanglement resources in all-electrically-controlled solid-state-based quantum relays.
NASA Astrophysics Data System (ADS)
Hwang, Ah Young; Kim, Sang Tae; Ji, Hyuk; Shin, Yeonwoo; Jeong, Jae Kyeong
2016-04-01
Transition tantalum induced crystallization of amorphous zinc tin oxide (a-ZTO) was observed at low temperature annealing of 300 °C. Thin-film transistors (TFTs) with an a-ZTO channel layer exhibited a reasonable field-effect mobility of 12.4 cm2/V s, subthreshold swing (SS) of 0.39 V/decade, threshold voltage (VTH) of 1.5 V, and ION/OFF ratio of ˜107. A significant improvement in the field-effect mobility (up to ˜33.5 cm2/V s) was achieved for crystallized ZTO TFTs: this improvement was accomplished without compromising the SS, VTH, or ION/OFF ratio due to the presence of a highly ordered microstructure.
Combined elemental and microstructural analysis of genuine and fake copper-alloy coins
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bartoli, L; Agresti, J; Mascalchi, M
2011-07-31
Innovative noninvasive material analysis techniques are applied to determine archaeometallurgical characteristics of copper-alloy coins from Florence's National Museum of Archaeology. Three supposedly authentic Roman coins and three hypothetically fraudolent imitations are thoroughly investigated using laser-induced plasma spectroscopy and time of flight neutron diffraction along with 3D videomicroscopy and electron microscopy. Material analyses are aimed at collecting data allowing for objective discrimination between genuine Roman productions and late fakes. The results show the mentioned techniques provide quantitative compositional and textural data, which are strictly related to the manufacturing processes and aging of copper alloys. (laser applications)
Barashev, A. V.; Golubov, S. I.; Stoller, R. E.
2015-06-01
We studied the radiation growth of zirconium using a reaction–diffusion model which takes into account intra-cascade clustering of self-interstitial atoms and one-dimensional diffusion of interstitial clusters. The observed dose dependence of strain rates is accounted for by accumulation of sessile dislocation loops during irradiation. Moreover, the computational model developed and fitted to available experimental data is applied to study deformation of Zr single crystals under irradiation up to hundred dpa. Finally, the effect of cold work and the reasons for negative prismatic strains and co-existence of vacancy and interstitial loops are elucidated.
Some problems of brazing technology for the divertor plate manufacturing
NASA Astrophysics Data System (ADS)
Prokofiev, Yu. G.; Barabash, V. R.; Khorunov, V. F.; Maksimova, S. V.; Gervash, A. A.; Fabritsiev, S. A.; Vinokurov, V. F.
1992-09-01
Among the different design options of the ITER reactor divertor, the joints of the carbon-based materials and molybdenum alloys and joints of tungsten and copper alloys are considered. High-temperature brazing is one of the most promising joining methods for the plasma facing and heat sink materials. The use of brazing for creation of W-Cu and graphite-Mo joints are given here. In addition, the investigation results of microstructure, microhardness and mechanical properties of the joints are presented. For W-Cu samples an influence of the neutron irradiation on the joining strength was studied.
NASA Astrophysics Data System (ADS)
Giuliani, Alessandra; Albertini, Gianni; Manescu, Adrian
2004-07-01
Residual stresses have been investigated in samples made of AA6061+22% Al2O3 in order to correlate microstructural characteristics with mechanical performances. In particular, the possible occurrence of a brittle fracture induced by an excessive load transfer from the matrix to the reinforcement was investigated. To this end, macrostresses and microstresses were analysed. A neutron diffraction test on 12 specimens submitted to several loading/unloading conditions at different temperatures was performed. These measurements aimed to establish the optimal temperature for the initial extruded billet in pre-heating stage, before forging the final wheel hub.
In situ TEM of radiation effects in complex ceramics.
Lian, Jie; Wang, L M; Sun, Kai; Ewing, Rodney C
2009-03-01
In situ transmission electron microscopy (TEM) has been extensively applied to study radiation effects in a wide variety of materials, such as metals, ceramics and semiconductors and is an indispensable tool in obtaining a fundamental understanding of energetic beam-matter interactions, damage events, and materials' behavior under intense radiation environments. In this article, in situ TEM observations of radiation effects in complex ceramics (e.g., oxides, silicates, and phosphates) subjected to energetic ion and electron irradiations have been summarized with a focus on irradiation-induced microstructural evolution, changes in microchemistry, and the formation of nanostructures. New results for in situ TEM observation of radiation effects in pyrochlore, A(2)B(2)O(7), and zircon, ZrSiO(4), subjected to multiple beam irradiations are presented, and the effects of simultaneous irradiations of alpha-decay and beta-decay on the microstructural evolution of potential nuclear waste forms are discussed. Furthermore, in situ TEM results of radiation effects in a sodium borosilicate glass subjected to electron-beam exposure are introduced to highlight the important applications of advanced analytical TEM techniques, including Z-contrast imaging, energy filtered TEM (EFTEM), and electron energy loss spectroscopy (EELS), in studying radiation effects in materials microstructural evolution and microchemical changes. By combining ex situ TEM and advanced analytical TEM techniques with in situ TEM observations under energetic beam irradiations, one can obtain invaluable information on the phase stability and response behaviors of materials under a wide range of irradiation conditions. (c) 2009 Wiley-Liss, Inc.
Development of an ion time-of-flight spectrometer for neutron depth profiling
NASA Astrophysics Data System (ADS)
Cetiner, Mustafa Sacit
Ion time-of-flight spectrometry techniques are investigated for applicability to neutron depth profiling. Time-of-flight techniques are used extensively in a wide range of scientific and technological applications including energy and mass spectroscopy. Neutron depth profiling is a near-surface analysis technique that gives concentration distribution versus depth for certain technologically important light elements. The technique uses thermal or sub-thermal neutrons to initiate (n, p) or (n, alpha) reactions. Concentration versus depth distribution is obtained by the transformation of the energy spectrum into depth distribution by using stopping force tables of the projectiles in the substrate, and by converting the number of counts into concentration using a standard sample of known dose value. Conventionally, neutron depth profiling measurements are based on charged particle spectrometry, which employs semiconductor detectors such as a surface barrier detector (SBD) and the associated electronics. Measurements with semiconductor detectors are affected by a number of broadening mechanisms, which result from the interactions between the projectile ion and the detector material as well as fluctuations in the signal generation process. These are inherent features of the detection mechanism that involve the semiconductor detectors and cannot be avoided. Ion time-of-flight spectrometry offers highly precise measurement capabilities, particularly for slow particles. For high-energy low-mass particles, measurement resolution tends to degrade with all other parameters fixed. The threshold for more precise ion energy measurements with respect to conventional techniques, such as direct energy measurement by a surface barrier detector, is directly related to the design and operating parameters of the device. Time-of-flight spectrometry involves correlated detection of two signals by a coincidence unit. In ion time-of-flight spectroscopy, the ion generates the primary input signal. Without loss of generality, the secondary signal is obtained by the passage of the ion through a thin carbon foil, which produces ion-induced secondary electron emission (IISEE). The time-of-flight spectrometer physically acts as an ion/electron separator. The electrons that enter the active volume of the spectrometer are transported onto the microchannel plate detector to generate the secondary signal. The electron optics can be designed in variety of ways depending on the nature of the measurement and physical requirements. Two ion time-of-flight spectrometer designs are introduced: the parallel electric and magnetic (PEM) field spectrometer and the cross electric and magnetic (CEM) field spectrometer. The CEM field spectrometers have been extensively used in a wide range of applications where precise mass differentiation is required. The PEM field spectrometers have lately found interest in mass spectroscopy applications. The application of the PEM field spectrometer for energy measurements is a novel approach. The PEM field spectrometer used in the measurements employs axial electric and magnetic fields along the nominal direction of the incident ion. The secondary electrons are created by a thin carbon foil on the entrance disk and transported on the microchannel plate that faces the carbon foil. The initial angular distribution of the secondary electrons has virtually no effect on the transport time of the secondary electrons from the surface of the carbon foil to the electron microchannel plate detector. Therefore, the PEM field spectrometer can offer high-resolution energy measurement for relatively lower electric fields. The measurements with the PEM field spectrometer were made with the Tandem linear particle accelerator at the IBM T. J. Watson Research Center at Yorktown Heights, NY. The CEM field spectrometer developed for the thesis employs axial electric field along the nominal direction of the ion, and has perpendicular magnetic field. As the electric field accelerates and then decelerates the emitted secondary electron beam, the magnetic field steers the beam away from the source and focuses it onto the electron microchannel plate detector. The initial momentum distribution of the electron beam is observed to have profound effect on the electron transport time. Hence, the CEM field spectrometer measurements suffer more from spectral broadening at similar operating parameters. The CEM field spectrometer measurements were obtained with a 210Po alpha source at the Penn State Radiation Science and Engineering Center, University Park, PA. Although the PEM field spectrometer suffers less from electron transport time dispersion, the CEM field spectrometer is more suited for application to neutron depth profiling. The multiple small-diameter apertures used in the PEM field configuration considerably reduces the geometric efficiency of the spectrometer. Most of the neutron depth profiling measurements, where isotropic emission of charged particles is observed, have relatively low count rates; hence, high detection efficiency is essential.
NASA Astrophysics Data System (ADS)
Fattah-alhosseini, Arash; Ansari, Ali Reza; Mazaheri, Yousef; Karimi, Mohsen
2017-02-01
In this study, the electrochemical behavior of commercial pure titanium with both coarse-grained (annealed sample with the average grain size of about 45 µm) and nano-grained microstructure was compared by potentiodynamic polarization, electrochemical impedance spectroscopy (EIS), and Mott-Schottky analysis. Nano-grained Ti, which typically has a grain size of about 90 nm, is successfully made by six-cycle accumulative roll-bonding process at room temperature. Potentiodynamic polarization plots and impedance measurements revealed that as a result of grain refinement, the passive behavior of the nano-grained sample was improved compared to that of annealed pure Ti in H2SO4 solutions. Mott-Schottky analysis indicated that the passive films behaved as n-type semiconductors in H2SO4 solutions and grain refinement did not change the semiconductor type of passive films. Also, Mott-Schottky analysis showed that the donor densities decreased as the grain size of the samples reduced. Finally, all electrochemical tests showed that the electrochemical behavior of the nano-grained sample was improved compared to that of annealed pure Ti, mainly due to the formation of thicker and less defective oxide film.
What Is Moving in Hybrid Halide Perovskite Solar Cells?
2016-01-01
Conspectus Organic–inorganic semiconductors, which adopt the perovskite crystal structure, have perturbed the landscape of contemporary photovoltaics research. High-efficiency solar cells can be produced with solution-processed active layers. The materials are earth abundant, and the simple processing required suggests that high-throughput and low-cost manufacture at scale should be possible. While these materials bear considerable similarity to traditional inorganic semiconductors, there are notable differences in their optoelectronic behavior. A key distinction of these materials is that they are physically soft, leading to considerable thermally activated motion. In this Account, we discuss the internal motion of methylammonium lead iodide (CH3NH3PbI3) and formamidinium lead iodide ([CH(NH2)2]PbI3), covering: (i) molecular rotation-libration in the cuboctahedral cavity; (ii) drift and diffusion of large electron and hole polarons; (iii) transport of charged ionic defects. These processes give rise to a range of properties that are unconventional for photovoltaic materials, including frequency-dependent permittivity, low electron–hole recombination rates, and current–voltage hysteresis. Multiscale simulations, drawing from electronic structure, ab initio molecular dynamic and Monte Carlo computational techniques, have been combined with neutron diffraction measurements, quasi-elastic neutron scattering, and ultrafast vibrational spectroscopy to qualify the nature and time scales of the motions. Electron and hole motion occurs on a femtosecond time scale. Molecular libration is a sub-picosecond process. Molecular rotations occur with a time constant of several picoseconds depending on the cation. Recent experimental evidence and theoretical models for simultaneous electron and ion transport in these materials has been presented, suggesting they are mixed-mode conductors with similarities to fast-ion conducting metal oxide perovskites developed for battery and fuel cell applications. We expound on the implications of these effects for the photovoltaic action. The temporal behavior displayed by hybrid perovskites introduces a sensitivity in materials characterization to the time and length scale of the measurement, as well as the history of each sample. It also poses significant challenges for accurate materials modeling and device simulations. There are large differences between the average and local crystal structures, and the nature of charge transport is too complex to be described by common one-dimensional drift-diffusion models. Herein, we critically discuss the atomistic origin of the dynamic processes and the associated chemical disorder intrinsic to crystalline hybrid perovskite semiconductors. PMID:26859250
Valence, exchange interaction, and location of Mn ions in polycrystalline M nxG a1 -xN (x ≤0.04 )
NASA Astrophysics Data System (ADS)
Furrer, A.; Krämer, K. W.; Podlesnyak, A.; Pomjakushin, V.; Sheptyakov, D.; Safonova, O. V.
2018-04-01
We present an experimental study for polycrystalline samples of the diluted magnetic semiconductor M nxG a1 -xN (x ≤0.04 ) in order to address some of the existing controversial issues. X-ray and neutron diffraction, x-ray absorption near-edge structure, and electron paramagnetic resonance experiments were used to characterize the structural, electronic, and magnetic properties of the samples, and inelastic neutron scattering was employed to determine the magnetic excitations associated with Mn monomers and dimers. Our main conclusions are as follows: (i) The valence of the Mn ions is 2 + . (ii) The M n2 + ions experience a substantial single-ion axial anisotropy with parameter D =0.027 (3 )meV . (iii) Nearest-neighbor M n2 + ions are coupled antiferromagnetically. The exchange parameter J =-0.140 (7 )meV is independent of the Mn content x ; i.e., there is no evidence for hole-induced modifications of J towards a potentially high Curie temperature postulated in the literature.
Measurement of Nuclear Recoils in the CDMS II Dark Matter Search
DOE Office of Scientific and Technical Information (OSTI.GOV)
Fallows, Scott Mathew
The Cryogenic Dark Matter Search (CDMS) experiment is designed to directly detect elastic scatters of weakly-interacting massive dark matter particles (WIMPs), on target nuclei in semiconductor crystals composed of Si and Ge. These scatters would occur very rarely, in an overwhelming background composed primarily of electron recoils from photons and electrons, as well as a smaller but non-negligible background of WIMP-like nuclear recoils from neutrons. The CDMS II generation of detectors simultaneously measure ionization and athermal phonon signals from each scatter, allowing discrimination against virtually all electron recoils in the detector bulk. Pulse-shape timing analysis allows discrimination against nearly allmore » remaining electron recoils taking place near detector surfaces. Along with carefully limited neutron backgrounds, this experimental program allowed for \\background- free" operation of CDMS II at Soudan, with less than one background event expected in each WIMP-search analysis. As a result, exclusionary upper-limits on WIMP-nucleon interaction cross section were placed over a wide range of candidate WIMP masses, ruling out large new regions of parameter space.« less
Hubert, G; Regis, D; Cheminet, A; Gatti, M; Lacoste, V
2014-10-01
Particles originating from primary cosmic radiation, which hit the Earth's atmosphere give rise to a complex field of secondary particles. These particles include neutrons, protons, muons, pions, etc. Since the 1980s it has been known that terrestrial cosmic rays can penetrate the natural shielding of buildings, equipment and circuit package and induce soft errors in integrated circuits. Recently, research has shown that commercial static random access memories are now so small and sufficiently sensitive that single event upsets (SEUs) may be induced from the electronic stopping of a proton. With continued advancements in process size, this downward trend in sensitivity is expected to continue. Then, muon soft errors have been predicted for nano-electronics. This paper describes the effects in the specific cases such as neutron-, proton- and muon-induced SEU observed in complementary metal-oxide semiconductor. The results will allow investigating the technology node sensitivity along the scaling trend. © The Author 2014. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.
NASA Astrophysics Data System (ADS)
Petorak, Christopher
The understanding of failure mechanisms in plasma sprayed 7 wt% yttria stabilized zirconia (YSZ) is a key step toward optimizing thermal barrier coating (TBC) usage, design, and life prediction. The purpose of the present work is to characterize and understand the stress relaxation behavior occurring in plasma-sprayed YSZ coatings, so that the correlating magnitude of unfavorable tensile stress, which coatings experienced upon cooling, may be reduced through microstructural design. The microstructure and properties of as-sprayed coatings changes immensely during service at high temperature, and therefore the effects of long heat-treatment times, and the concomitant change within the microstructure, on the time-dependent mechanical behavior of stand-alone YSZ coatings was studied in parallel with the as-sprayed coating condition. Aside from influencing the mechanical properties, stress relaxation also affects the insulating efficiency of plasma-sprayed 7wt% YSZ coatings. Directionally dependent changes in microstructure due to stress relaxation of a uniaxially applied stress at 1200°C were observed in plasma-sprayed coatings. Small angle neutron scattering (SANS) investigation of coatings after stress relaxation displayed a 46% reduction in the specific surface area connected to the load-orientation dependent closure of void surface area perpendicular to the applied load when compared to coatings sintered in air, i.e. no applied load. These anisotropic microstructural changes were linked to the thermal properties of the coating. For example, a coating stress relaxed from 60 MPa for 5-min at 1200°C exhibited a thermal conductivity of 2.1 W/m-K. A coating that was only heat-treated for 5-min at 1200°C (i.e. no stress applied) exhibited a thermal conductivity of 1.7 W/m·K. In the current study, uniaxial stress relaxation in plasma-sprayed 7wt% YSZ coatings was determined the result of: (1) A more uniform distribution of the applied load with time, (2) A reduction in the SSA associated with void systems due to sintering, specifically the closing and healing of intralamellar cracks perpendicular to the applied stress, and (3) A compaction and closure of void systems under the applied load. These anisotropic changes in microstructure result in distinguishable changes in thermo-mechanical properties, with very minute changes to the overall bulk density.
Effect of starting microstructure on helium plasma-materials interaction in tungsten
Wang, Kun; Bannister, Mark E.; Meyer, Fred W.; ...
2016-11-24
Here, in a magnetic fusion energy (MFE) device, the plasma-facing materials (PFMs) will be subjected to tremendous fluxes of ions, heat, and neutrons. The response of PFMs to the fusion environment is still not well defined. Tungsten metal is the present candidate of choice for PFM applications such as the divertor in ITER. However, tungsten's microstructure will evolve in service, possibly to include recrystallization. How tungsten's response to plasma exposure evolves with changes in microstructure is presently unknown. In this work, we have exposed hot-worked and recrystallized tungsten to an 80 eV helium ion beam at a temperature of 900more » °C to fluences of 2 × 10 23 or 20 × 10 23 He/m 2. This resulted in a faceted surface structure at the lower fluence or short but well-developed nanofuzz structure at the higher fluence. There was little difference in the hot-rolled or recrystallized material's near-surface (≤50 nm) bubbles at either fluence. At higher fluence and deeper depth, the bubble populations of the hot-rolled and recrystallized were different, the recrystallized being larger and deeper. This may explain previous high-fluence results showing pronounced differences in recrystallized material. The deeper penetration in recrystallized material also implies that grain boundaries are traps, rather than high-diffusivity paths.« less
Structural, microstructural and magnetic evolution in cryo milled carbon doped MnAl.
Fang, Hailiang; Cedervall, Johan; Hedlund, Daniel; Shafeie, Samrand; Deledda, Stefano; Olsson, Fredrik; von Fieandt, Linus; Bednarcik, Jozef; Svedlindh, Peter; Gunnarsson, Klas; Sahlberg, Martin
2018-02-06
The low cost, rare earth free τ-phase of MnAl has high potential to partially replace bonded Nd 2 Fe 14 B rare earth permanent magnets. However, the τ-phase is metastable and it is experimentally difficult to obtain powders suitable for the permanent magnet alignment process, which requires the fine powders to have an appropriate microstructure and high τ-phase purity. In this work, a new method to make high purity τ-phase fine powders is presented. A high purity τ-phase Mn 0.55 Al 0.45 C 0.02 alloy was synthesized by the drop synthesis method. The drop synthesized material was subjected to cryo milling and followed by a flash heating process. The crystal structure and microstructure of the drop synthesized, cryo milled and flash heated samples were studied by X-ray in situ powder diffraction, scanning electron microscopy, X-ray energy dispersive spectroscopy and electron backscatter diffraction. Magnetic properties and magnetic structure of the drop synthesized, cryo milled, flash heated samples were characterized by magnetometry and neutron powder diffraction, respectively. The results reveal that the 2 and 4 hours cryo milled and flash heated samples both exhibit high τ-phase purity and micron-sized round particle shapes. Moreover, the flash heated samples display high saturation magnetization as well as increased coercivity.
Riedel, Christoph; Zimmermann, Elizabeth A; Zustin, Jozef; Niecke, Manfred; Amling, Michael; Grynpas, Marc; Busse, Björn
2017-02-01
Strontium ranelate and fluoride salts are therapeutic options to reduce fracture risk in osteoporosis. Incorporation of these elements in the physiological hydroxyapatite matrix of bone is accompanied by changes in bone remodeling, composition, and structure. However, a direct comparison of the effectiveness of strontium and fluoride treatment in human cortical bone with a focus on the resulting mechanical properties remains to be established. Study groups are composed of undecalcified specimens from healthy controls, treatment-naïve osteoporosis cases, and strontium ranelate or fluoride-treated osteoporosis cases. Concentrations of both elements were determined using instrumental neutron activation analysis (INAA). Backscattered electron imaging was carried out to investigate the calcium content and the cortical microstructure. In comparison to osteoporotic patients, fluoride and strontium-treated patients have a lower cortical porosity indicating an improvement in bone microstructure. Mechanical properties were assessed via reference point indentation as a measure of bone's resistance to deformation. The strontium-incorporation led to significantly lower total indentation distance values compared to osteoporotic cases; controls have the highest resistance to indentation. In conclusion, osteoporosis treatment with strontium and fluoride showed positive effects on the microstructure and the mechanical characteristics of bone in comparison to treatment-naïve osteoporotic bone. © 2016 Wiley Periodicals, Inc. J Biomed Mater Res Part A: 105A: 433-442, 2017. © 2016 Wiley Periodicals, Inc.