Comparison of Respiratory-Gated and Respiratory-Ungated Planning in Scattered Carbon Ion Beam Treatment of the Pancreas Using Four-Dimensional Computed Tomography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mori, Shinichiro, E-mail: shinshin@nirs.go.j; Yanagi, Takeshi; Hara, Ryusuke

2010-01-15

Purpose: We compared respiratory-gated and respiratory-ungated treatment strategies using four-dimensional (4D) scattered carbon ion beam distribution in pancreatic 4D computed tomography (CT) datasets. Methods and Materials: Seven inpatients with pancreatic tumors underwent 4DCT scanning under free-breathing conditions using a rapidly rotating cone-beam CT, which was integrated with a 256-slice detector, in cine mode. Two types of bolus for gated and ungated treatment were designed to cover the planning target volume (PTV) using 4DCT datasets in a 30% duty cycle around exhalation and a single respiratory cycle, respectively. Carbon ion beam distribution for each strategy was calculated as a function ofmore » respiratory phase by applying the compensating bolus to 4DCT at the respective phases. Smearing was not applied to the bolus, but consideration was given to drill diameter. The accumulated dose distributions were calculated by applying deformable registration and calculating the dose-volume histogram. Results: Doses to normal tissues in gated treatment were minimized mainly on the inferior aspect, which thereby minimized excessive doses to normal tissues. Over 95% of the dose, however, was delivered to the clinical target volume at all phases for both treatment strategies. Maximum doses to the duodenum and pancreas averaged across all patients were 43.1/43.1 GyE (ungated/gated) and 43.2/43.2 GyE (ungated/gated), respectively. Conclusions: Although gated treatment minimized excessive dosing to normal tissue, the difference between treatment strategies was small. Respiratory gating may not always be required in pancreatic treatment as long as dose distribution is assessed. Any application of our results to clinical use should be undertaken only after discussion with oncologists, particularly with regard to radiotherapy combined with chemotherapy.« less

An experimental study of solid source diffusion by spin on dopants and its application for minimal silicon-on-insulator CMOS fabrication

NASA Astrophysics Data System (ADS)

Liu, Yongxun; Koga, Kazuhiro; Khumpuang, Sommawan; Nagao, Masayoshi; Matsukawa, Takashi; Hara, Shiro

2017-06-01

Solid source diffusions of phosphorus (P) and boron (B) into the half-inch (12.5 mm) minimal silicon (Si) wafers by spin on dopants (SOD) have been systematically investigated and the physical-vapor-deposited (PVD) titanium nitride (TiN) metal gate minimal silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs) have successfully been fabricated using the developed SOD thermal diffusion technique. It was experimentally confirmed that a low temperature oxidation (LTO) process which depresses a boron silicide layer formation is effective way to remove boron-glass in a diluted hydrofluoric acid (DHF) solution. It was also found that top Si layer thickness of SOI wafers is reduced in the SOD thermal diffusion process because of its consumption by thermal oxidation owing to the oxygen atoms included in SOD films, which should be carefully considered in the ultrathin SOI device fabrication. Moreover, normal operations of the fabricated minimal PVD-TiN metal gate SOI-CMOS inverters, static random access memory (SRAM) cells and ring oscillators have been demonstrated. These circuit level results indicate that no remarkable particles and interface traps were introduced onto the minimal wafers during the device fabrication, and the developed solid source diffusion by SOD is useful for the fabrication of functional logic gate minimal SOI-CMOS integrated circuits.

Gating the holes in the Swiss cheese (part I): Expanding professor Reason's model for patient safety.

PubMed

Seshia, Shashi S; Bryan Young, G; Makhinson, Michael; Smith, Preston A; Stobart, Kent; Croskerry, Pat

2018-02-01

Although patient safety has improved steadily, harm remains a substantial global challenge. Additionally, safety needs to be ensured not only in hospitals but also across the continuum of care. Better understanding of the complex cognitive factors influencing health care-related decisions and organizational cultures could lead to more rational approaches, and thereby to further improvement. A model integrating the concepts underlying Reason's Swiss cheese theory and the cognitive-affective biases plus cascade could advance the understanding of cognitive-affective processes that underlie decisions and organizational cultures across the continuum of care. Thematic analysis, qualitative information from several sources being used to support argumentation. Complex covert cognitive phenomena underlie decisions influencing health care. In the integrated model, the Swiss cheese slices represent dynamic cognitive-affective (mental) gates: Reason's successive layers of defence. Like firewalls and antivirus programs, cognitive-affective gates normally allow the passage of rational decisions but block or counter unsounds ones. Gates can be breached (ie, holes created) at one or more levels of organizations, teams, and individuals, by (1) any element of cognitive-affective biases plus (conflicts of interest and cognitive biases being the best studied) and (2) other potential error-provoking factors. Conversely, flawed decisions can be blocked and consequences minimized; for example, by addressing cognitive biases plus and error-provoking factors, and being constantly mindful. Informed shared decision making is a neglected but critical layer of defence (cognitive-affective gate). The integrated model can be custom tailored to specific situations, and the underlying principles applied to all methods for improving safety. The model may also provide a framework for developing and evaluating strategies to optimize organizational cultures and decisions. The concept is abstract, the model is virtual, and the best supportive evidence is qualitative and indirect. The proposed model may help enhance rational decision making across the continuum of care, thereby improving patient safety globally. © 2017 The Authors. Journal of Evaluation in Clinical Practice published by John Wiley & Sons, Ltd.

Gating the holes in the Swiss cheese (part I): Expanding professor Reason's model for patient safety

PubMed Central

Bryan Young, G.; Makhinson, Michael; Smith, Preston A.; Stobart, Kent; Croskerry, Pat

2017-01-01

Abstract Introduction Although patient safety has improved steadily, harm remains a substantial global challenge. Additionally, safety needs to be ensured not only in hospitals but also across the continuum of care. Better understanding of the complex cognitive factors influencing health care–related decisions and organizational cultures could lead to more rational approaches, and thereby to further improvement. Hypothesis A model integrating the concepts underlying Reason's Swiss cheese theory and the cognitive‐affective biases plus cascade could advance the understanding of cognitive‐affective processes that underlie decisions and organizational cultures across the continuum of care. Methods Thematic analysis, qualitative information from several sources being used to support argumentation. Discussion Complex covert cognitive phenomena underlie decisions influencing health care. In the integrated model, the Swiss cheese slices represent dynamic cognitive‐affective (mental) gates: Reason's successive layers of defence. Like firewalls and antivirus programs, cognitive‐affective gates normally allow the passage of rational decisions but block or counter unsounds ones. Gates can be breached (ie, holes created) at one or more levels of organizations, teams, and individuals, by (1) any element of cognitive‐affective biases plus (conflicts of interest and cognitive biases being the best studied) and (2) other potential error‐provoking factors. Conversely, flawed decisions can be blocked and consequences minimized; for example, by addressing cognitive biases plus and error‐provoking factors, and being constantly mindful. Informed shared decision making is a neglected but critical layer of defence (cognitive‐affective gate). The integrated model can be custom tailored to specific situations, and the underlying principles applied to all methods for improving safety. The model may also provide a framework for developing and evaluating strategies to optimize organizational cultures and decisions. Limitations The concept is abstract, the model is virtual, and the best supportive evidence is qualitative and indirect. Conclusions The proposed model may help enhance rational decision making across the continuum of care, thereby improving patient safety globally. PMID:29168290

Complex Instruction Set Quantum Computing

NASA Astrophysics Data System (ADS)

Sanders, G. D.; Kim, K. W.; Holton, W. C.

1998-03-01

In proposed quantum computers, electromagnetic pulses are used to implement logic gates on quantum bits (qubits). Gates are unitary transformations applied to coherent qubit wavefunctions and a universal computer can be created using a minimal set of gates. By applying many elementary gates in sequence, desired quantum computations can be performed. This reduced instruction set approach to quantum computing (RISC QC) is characterized by serial application of a few basic pulse shapes and a long coherence time. However, the unitary matrix of the overall computation is ultimately a unitary matrix of the same size as any of the elementary matrices. This suggests that we might replace a sequence of reduced instructions with a single complex instruction using an optimally taylored pulse. We refer to this approach as complex instruction set quantum computing (CISC QC). One trades the requirement for long coherence times for the ability to design and generate potentially more complex pulses. We consider a model system of coupled qubits interacting through nearest neighbor coupling and show that CISC QC can reduce the time required to perform quantum computations.

Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance

DOE PAGES

King, M. P.; Wu, X.; Eller, Manfred; ...

2016-12-07

Here, total ionizing dose results are provided, showing the effects of different threshold adjust implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation-induced threshold voltage shift across a variety of transistor types is observed. Off-state leakage current of nMOSFET transistors exhibits a strong gate bias dependence, indicating electrostatic gate control of the sub-fin region and the corresponding parasitic conduction path are the largest concern for radiation hardness in FinFET technology. The high-Vth transistors exhibit the best irradiation performance across all bias conditions, showing a reasonably small change in off-state leakage current and Vth, while the low-Vth transistors exhibitmore » a larger change in off-state leakage current. The “worst-case” bias condition during irradiation for both pull-down and pass-gate nMOSFETs in static random access memory is determined to be the on-state (Vgs = Vdd). We find the nMOSFET pull-down and pass-gate transistors of the SRAM bit-cell show less radiation-induced degradation due to transistor geometry and channel doping differences than the low-Vth transistor. Near-threshold operation is presented as a methodology for reducing radiation-induced increases in off-state device leakage current. In a 14-nm FinFET technology, the modeling indicates devices with high channel stop doping show the most robust response to TID allowing stable operation of ring oscillators and the SRAM bit-cell with minimal shift in critical operating characteristics.« less

Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

King, M. P.; Wu, X.; Eller, Manfred

Here, total ionizing dose results are provided, showing the effects of different threshold adjust implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation-induced threshold voltage shift across a variety of transistor types is observed. Off-state leakage current of nMOSFET transistors exhibits a strong gate bias dependence, indicating electrostatic gate control of the sub-fin region and the corresponding parasitic conduction path are the largest concern for radiation hardness in FinFET technology. The high-Vth transistors exhibit the best irradiation performance across all bias conditions, showing a reasonably small change in off-state leakage current and Vth, while the low-Vth transistors exhibitmore » a larger change in off-state leakage current. The “worst-case” bias condition during irradiation for both pull-down and pass-gate nMOSFETs in static random access memory is determined to be the on-state (Vgs = Vdd). We find the nMOSFET pull-down and pass-gate transistors of the SRAM bit-cell show less radiation-induced degradation due to transistor geometry and channel doping differences than the low-Vth transistor. Near-threshold operation is presented as a methodology for reducing radiation-induced increases in off-state device leakage current. In a 14-nm FinFET technology, the modeling indicates devices with high channel stop doping show the most robust response to TID allowing stable operation of ring oscillators and the SRAM bit-cell with minimal shift in critical operating characteristics.« less

Harnessing energy-sharing collisions of Manakov solitons to implement universal NOR and OR logic gates

NASA Astrophysics Data System (ADS)

Vijayajayanthi, M.; Kanna, T.; Murali, K.; Lakshmanan, M.

2018-06-01

The energy-sharing collision of bright optical solitons in the Manakov system, governing pulse propagation in high birefringent fiber, is employed theoretically to realize optical logic gates. In particular, we successfully construct (theoretically) the universal NOR gate and the OR gate from the energy-sharing collisions of just four bright solitons which can be well described by the exact bright four-soliton solution of the Manakov system. This construction procedure has important merits such as realizing the two input gates with a minimal number of soliton collisions and possibilities of multistate logic. The recent experiments on Manakov solitons suggest the possibility of implementation of this theoretical construction of such gates and ultimately an all-optical computer.

Genetic Circuit Performance under Conditions Relevant for Industrial Bioreactors

PubMed Central

Moser, Felix; Broers, Nicolette J.; Hartmans, Sybe; Tamsir, Alvin; Kerkman, Richard; Roubos, Johannes A.; Bovenberg, Roel; Voigt, Christopher A.

2014-01-01

Synthetic genetic programs promise to enable novel applications in industrial processes. For such applications, the genetic circuits that compose programs will require fidelity in varying and complex environments. In this work, we report the performance of two synthetic circuits in Escherichia coli under industrially relevant conditions, including the selection of media, strain, and growth rate. We test and compare two transcriptional circuits: an AND and a NOR gate. In E. coli DH10B, the AND gate is inactive in minimal media; activity can be rescued by supplementing the media and transferring the gate into the industrial strain E. coli DS68637 where normal function is observed in minimal media. In contrast, the NOR gate is robust to media composition and functions similarly in both strains. The AND gate is evaluated at three stages of early scale-up: 100 ml shake-flask experiments, a 1 ml MTP microreactor, and a 10 L bioreactor. A reference plasmid that constitutively produces a GFP reporter is used to make comparisons of circuit performance across conditions. The AND gate function is quantitatively different at each scale. The output deteriorates late in fermentation after the shift from exponential to constant feed rates, which induces rapid resource depletion and changes in growth rate. In addition, one of the output states of the AND gate failed in the bioreactor, effectively making it only responsive to a single input. Finally, cells carrying the AND gate show considerably less accumulation of biomass. Overall, these results highlight challenges and suggest modified strategies for developing and characterizing genetic circuits that function reliably during fermentation. PMID:23656232

Subframe Burst Gating for Raman Spectroscopy in Combustion

NASA Technical Reports Server (NTRS)

Kojima, Jun; Fischer, David; Nguyen, Quang-Viet

2010-01-01

We describe an architecture for spontaneous Raman scattering utilizing a frame-transfer CCD sensor operating in a subframe burst-gating mode to realize time-resolved combustion diagnostics. The technique permits all-electronic optical gating with microsecond shutter speeds 5 J.Ls) without compromising optical throughput or image fidelity. When used in conjunction with a pair of orthogonally polarized excitation lasers, the technique measures single-shot vibrational Raman scattering that is minimally contaminated by problematic optical background noise.

Automated flow cytometric analysis across large numbers of samples and cell types.

PubMed

Chen, Xiaoyi; Hasan, Milena; Libri, Valentina; Urrutia, Alejandra; Beitz, Benoît; Rouilly, Vincent; Duffy, Darragh; Patin, Étienne; Chalmond, Bernard; Rogge, Lars; Quintana-Murci, Lluis; Albert, Matthew L; Schwikowski, Benno

2015-04-01

Multi-parametric flow cytometry is a key technology for characterization of immune cell phenotypes. However, robust high-dimensional post-analytic strategies for automated data analysis in large numbers of donors are still lacking. Here, we report a computational pipeline, called FlowGM, which minimizes operator input, is insensitive to compensation settings, and can be adapted to different analytic panels. A Gaussian Mixture Model (GMM)-based approach was utilized for initial clustering, with the number of clusters determined using Bayesian Information Criterion. Meta-clustering in a reference donor permitted automated identification of 24 cell types across four panels. Cluster labels were integrated into FCS files, thus permitting comparisons to manual gating. Cell numbers and coefficient of variation (CV) were similar between FlowGM and conventional gating for lymphocyte populations, but notably FlowGM provided improved discrimination of "hard-to-gate" monocyte and dendritic cell (DC) subsets. FlowGM thus provides rapid high-dimensional analysis of cell phenotypes and is amenable to cohort studies. Copyright © 2015. Published by Elsevier Inc.

Quiescent period respiratory gating for PET∕CT

PubMed Central

Liu, Chi; Alessio, Adam; Pierce, Larry; Thielemans, Kris; Wollenweber, Scott; Ganin, Alexander; Kinahan, Paul

2010-01-01

Purpose: To minimize respiratory motion artifacts, this work proposes quiescent period gating (QPG) methods that extract PET data from the end-expiration quiescent period and form a single PET frame with reduced motion and improved signal-to-noise properties. Methods: Two QPG methods are proposed and evaluated. Histogram-based quiescent period gating (H-QPG) extracts a fraction of PET data determined by a window of the respiratory displacement signal histogram. Cycle-based quiescent period gating (C-QPG) extracts data with a respiratory displacement signal below a specified threshold of the maximum amplitude of each individual respiratory cycle. Performances of both QPG methods were compared to ungated and five-bin phase-gated images across 21 FDG-PET∕CT patient data sets containing 31 thorax and abdomen lesions as well as with computer simulations driven by 1295 different patient respiratory traces. Image quality was evaluated in terms of the lesion SUVmax and the fraction of counts included in each gate as a surrogate for image noise. Results: For all the gating methods, image noise artifactually increases SUVmax when the fraction of counts included in each gate is less than 50%. While simulation data show that H-QPG is superior to C-QPG, the H-QPG and C-QPG methods lead to similar quantification-noise tradeoffs in patient data. Compared to ungated images, both QPG methods yield significantly higher lesion SUVmax. Compared to five-bin phase gating, the QPG methods yield significantly larger fraction of counts with similar SUVmax improvement. Both QPG methods result in increased lesion SUVmax for patients whose lesions have longer quiescent periods. Conclusions: Compared to ungated and phase-gated images, the QPG methods lead to images with less motion blurring and an improved compromise between SUVmax and fraction of counts. The QPG methods for respiratory motion compensation could effectively improve tumor quantification with minimal noise increase. PMID:20964223

Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Tari, Alireza; Wong, William S.

2018-02-01

Dual-dielectric SiOx/SiNx thin-film layers were used as back-channel and gate-dielectric barrier layers for bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs). The concentration profiles of hydrogen, indium, gallium, and zinc oxide were analyzed using secondary-ion mass spectroscopy characterization. By implementing an effective H-diffusion barrier, the hydrogen concentration and the creation of H-induced oxygen deficiency (H-Vo complex) defects during the processing of passivated flexible IGZO TFTs were minimized. A bilayer back-channel passivation layer, consisting of electron-beam deposited SiOx on plasma-enhanced chemical vapor-deposition (PECVD) SiNx films, effectively protected the TFT active region from plasma damage and minimized changes in the chemical composition of the semiconductor layer. A dual-dielectric PECVD SiOx/PECVD SiNx gate-dielectric, using SiOx as a barrier layer, also effectively prevented out-diffusion of hydrogen atoms from the PECVD SiNx-gate dielectric to the IGZO channel layer during the device fabrication.

A parallel algorithm for multi-level logic synthesis using the transduction method. M.S. Thesis

NASA Technical Reports Server (NTRS)

Lim, Chieng-Fai

1991-01-01

The Transduction Method has been shown to be a powerful tool in the optimization of multilevel networks. Many tools such as the SYLON synthesis system (X90), (CM89), (LM90) have been developed based on this method. A parallel implementation is presented of SYLON-XTRANS (XM89) on an eight processor Encore Multimax shared memory multiprocessor. It minimizes multilevel networks consisting of simple gates through parallel pruning, gate substitution, gate merging, generalized gate substitution, and gate input reduction. This implementation, called Parallel TRANSduction (PTRANS), also uses partitioning to break large circuits up and performs inter- and intra-partition dynamic load balancing. With this, good speedups and high processor efficiencies are achievable without sacrificing the resulting circuit quality.

Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz

NASA Astrophysics Data System (ADS)

Pei, Yi; Chu, Rongming; Fichtenbaum, Nicholas A.; Chen, Zhen; Brown, David; Shen, Likun; Keller, Stacia; DenBaars, Steven P.; Mishra, Umesh K.

2007-12-01

A recessed slant gate processing has been used in AlGaN/GaN high electron mobility transistors (HEMTs) to mitigate the electric field, minimize the dispersion and increase the breakdown voltage. More than one order of magnitude of decrease in gate leakage has been observed by recessing the slant gate. For a 0.65 μm gate-length device, an extrinsic fT of 18 GHz and extrinsic fMAX of 52 GHz at a drain bias of 25 V were achieved. At 10 GHz, a state-of-the-art power density of 20.9 W/mm, with a power-added efficiency (PAE) of 40% at a drain bias of 83 V, was demonstrated.

Robust 2-Qubit Gates in a Linear Ion Crystal Using a Frequency-Modulated Driving Force

NASA Astrophysics Data System (ADS)

Leung, Pak Hong; Landsman, Kevin A.; Figgatt, Caroline; Linke, Norbert M.; Monroe, Christopher; Brown, Kenneth R.

2018-01-01

In an ion trap quantum computer, collective motional modes are used to entangle two or more qubits in order to execute multiqubit logical gates. Any residual entanglement between the internal and motional states of the ions results in loss of fidelity, especially when there are many spectator ions in the crystal. We propose using a frequency-modulated driving force to minimize such errors. In simulation, we obtained an optimized frequency-modulated 2-qubit gate that can suppress errors to less than 0.01% and is robust against frequency drifts over ±1 kHz . Experimentally, we have obtained a 2-qubit gate fidelity of 98.3(4)%, a state-of-the-art result for 2-qubit gates with five ions.

Efficient Z gates for quantum computing

NASA Astrophysics Data System (ADS)

McKay, David C.; Wood, Christopher J.; Sheldon, Sarah; Chow, Jerry M.; Gambetta, Jay M.

2017-08-01

For superconducting qubits, microwave pulses drive rotations around the Bloch sphere. The phase of these drives can be used to generate zero-duration arbitrary virtual Z gates, which, combined with two Xπ /2 gates, can generate any SU(2) gate. Here we show how to best utilize these virtual Z gates to both improve algorithms and correct pulse errors. We perform randomized benchmarking using a Clifford set of Hadamard and Z gates and show that the error per Clifford is reduced versus a set consisting of standard finite-duration X and Y gates. Z gates can correct unitary rotation errors for weakly anharmonic qubits as an alternative to pulse-shaping techniques such as derivative removal by adiabatic gate (DRAG). We investigate leakage and show that a combination of DRAG pulse shaping to minimize leakage and Z gates to correct rotation errors realizes a 13.3 ns Xπ /2 gate characterized by low error [1.95 (3 ) ×10-4] and low leakage [3.1 (6 ) ×10-6] . Ultimately leakage is limited by the finite temperature of the qubit, but this limit is two orders of magnitude smaller than pulse errors due to decoherence.

Robust model-based 3d/3D fusion using sparse matching for minimally invasive surgery.

PubMed

Neumann, Dominik; Grbic, Sasa; John, Matthias; Navab, Nassir; Hornegger, Joachim; Ionasec, Razvan

2013-01-01

Classical surgery is being disrupted by minimally invasive and transcatheter procedures. As there is no direct view or access to the affected anatomy, advanced imaging techniques such as 3D C-arm CT and C-arm fluoroscopy are routinely used for intra-operative guidance. However, intra-operative modalities have limited image quality of the soft tissue and a reliable assessment of the cardiac anatomy can only be made by injecting contrast agent, which is harmful to the patient and requires complex acquisition protocols. We propose a novel sparse matching approach for fusing high quality pre-operative CT and non-contrasted, non-gated intra-operative C-arm CT by utilizing robust machine learning and numerical optimization techniques. Thus, high-quality patient-specific models can be extracted from the pre-operative CT and mapped to the intra-operative imaging environment to guide minimally invasive procedures. Extensive quantitative experiments demonstrate that our model-based fusion approach has an average execution time of 2.9 s, while the accuracy lies within expert user confidence intervals.

Realization of a quantum gate using gravitational search algorithm by perturbing three-dimensional harmonic oscillator with an electromagnetic field

NASA Astrophysics Data System (ADS)

Sharma, Navneet; Rawat, Tarun Kumar; Parthasarathy, Harish; Gautam, Kumar

2016-06-01

The aim of this paper is to design a current source obtained as a representation of p information symbols \\{I_k\\} so that the electromagnetic (EM) field generated interacts with a quantum atomic system producing after a fixed duration T a unitary gate U( T) that is as close as possible to a given unitary gate U_g. The design procedure involves calculating the EM field produced by \\{I_k\\} and hence the perturbing Hamiltonian produced by \\{I_k\\} finally resulting in the evolution operator produced by \\{I_k\\} up to cubic order based on the Dyson series expansion. The gate error energy is thus obtained as a cubic polynomial in \\{I_k\\} which is minimized using gravitational search algorithm. The signal to noise ratio (SNR) in the designed gate is higher as compared to that using quadratic Dyson series expansion. The SNR is calculated as the ratio of the Frobenius norm square of the desired gate to that of the desired gate error.

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Tian-Li, E-mail: Tian-Li.Wu@imec.be; Groeseneken, Guido; Department of Electrical Engineering, KU Leuven, Leuven

2015-08-31

In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress ismore » highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.« less

Model based hydropower gate operation for mitigation of CSO impacts by means of river base flow increase.

PubMed

Achleitner, S; De Toffol, S; Engelhard, C; Rauch, W

2005-01-01

In river stretches being subjected to flow regulation, usually for the purpose of energy production (e.g. Hydropower) or flood protection (river barrage), a special measure can be taken against the effect of combined sewer overflows (CSOs). The basic idea is the temporal increase of the river base flow (during storm weather) as an in-stream measure for mitigation of CSO spilling. The focus is the mitigation of the negative effect of acute pollution of substances. The measure developed can be seen as an application of the classic real time control (RTC) concept onto the river system. Upstream gate operation is to be based on real time monitoring and forecasting of precipitation. The main objective is the development of a model based predictive control system for the gate operation, by modelling of the overall wastewater system (incl. the receiving water). The main emphasis is put on the operational strategy and the appropriate short-term forecast of spilling events. The potential of the measure is tested for the application of the operational strategy and its ecological and economic feasibility. The implementation of such an in-stream measure into the hydropower's operational scheme is unique. Advantages are (a) the additional in-stream dilution of acute pollutants entering the receiving water and (b) the resulting minimization of the required CSO storage volume.

Real-time prediction and gating of respiratory motion using an extended Kalman filter and Gaussian process regression

NASA Astrophysics Data System (ADS)

Bukhari, W.; Hong, S.-M.

2015-01-01

Motion-adaptive radiotherapy aims to deliver a conformal dose to the target tumour with minimal normal tissue exposure by compensating for tumour motion in real time. The prediction as well as the gating of respiratory motion have received much attention over the last two decades for reducing the targeting error of the treatment beam due to respiratory motion. In this article, we present a real-time algorithm for predicting and gating respiratory motion that utilizes a model-based and a model-free Bayesian framework by combining them in a cascade structure. The algorithm, named EKF-GPR+, implements a gating function without pre-specifying a particular region of the patient’s breathing cycle. The algorithm first employs an extended Kalman filter (LCM-EKF) to predict the respiratory motion and then uses a model-free Gaussian process regression (GPR) to correct the error of the LCM-EKF prediction. The GPR is a non-parametric Bayesian algorithm that yields predictive variance under Gaussian assumptions. The EKF-GPR+ algorithm utilizes the predictive variance from the GPR component to capture the uncertainty in the LCM-EKF prediction error and systematically identify breathing points with a higher probability of large prediction error in advance. This identification allows us to pause the treatment beam over such instances. EKF-GPR+ implements the gating function by using simple calculations based on the predictive variance with no additional detection mechanism. A sparse approximation of the GPR algorithm is employed to realize EKF-GPR+ in real time. Extensive numerical experiments are performed based on a large database of 304 respiratory motion traces to evaluate EKF-GPR+. The experimental results show that the EKF-GPR+ algorithm effectively reduces the prediction error in a root-mean-square (RMS) sense by employing the gating function, albeit at the cost of a reduced duty cycle. As an example, EKF-GPR+ reduces the patient-wise RMS error to 37%, 39% and 42% in percent ratios relative to no prediction for a duty cycle of 80% at lookahead lengths of 192 ms, 384 ms and 576 ms, respectively. The experiments also confirm that EKF-GPR+ controls the duty cycle with reasonable accuracy.

Simulating the performance of a distance-3 surface code in a linear ion trap

NASA Astrophysics Data System (ADS)

Trout, Colin J.; Li, Muyuan; Gutiérrez, Mauricio; Wu, Yukai; Wang, Sheng-Tao; Duan, Luming; Brown, Kenneth R.

2018-04-01

We explore the feasibility of implementing a small surface code with 9 data qubits and 8 ancilla qubits, commonly referred to as surface-17, using a linear chain of 171Yb+ ions. Two-qubit gates can be performed between any two ions in the chain with gate time increasing linearly with ion distance. Measurement of the ion state by fluorescence requires that the ancilla qubits be physically separated from the data qubits to avoid errors on the data due to scattered photons. We minimize the time required to measure one round of stabilizers by optimizing the mapping of the two-dimensional surface code to the linear chain of ions. We develop a physically motivated Pauli error model that allows for fast simulation and captures the key sources of noise in an ion trap quantum computer including gate imperfections and ion heating. Our simulations showed a consistent requirement of a two-qubit gate fidelity of ≥99.9% for the logical memory to have a better fidelity than physical two-qubit operations. Finally, we perform an analysis of the error subsets from the importance sampling method used to bound the logical error rates to gain insight into which error sources are particularly detrimental to error correction.

Ephaptic coupling rescues conduction failure in weakly coupled cardiac tissue with voltage-gated gap junctions

NASA Astrophysics Data System (ADS)

Weinberg, S. H.

2017-09-01

Electrical conduction in cardiac tissue is usually considered to be primarily facilitated by gap junctions, providing a pathway between the intracellular spaces of neighboring cells. However, recent studies have highlighted the role of coupling via extracellular electric fields, also known as ephaptic coupling, particularly in the setting of reduced gap junction expression. Further, in the setting of reduced gap junctional coupling, voltage-dependent gating of gap junctions, an oft-neglected biophysical property in computational studies, produces a positive feedback that promotes conduction failure. We hypothesized that ephaptic coupling can break the positive feedback loop and rescue conduction failure in weakly coupled cardiac tissue. In a computational tissue model incorporating voltage-gated gap junctions and ephaptic coupling, we demonstrate that ephaptic coupling can rescue conduction failure in weakly coupled tissue. Further, ephaptic coupling increased conduction velocity in weakly coupled tissue, and importantly, reduced the minimum gap junctional coupling necessary for conduction, most prominently at fast pacing rates. Finally, we find that, although neglecting gap junction voltage-gating results in negligible differences in well coupled tissue, more significant differences occur in weakly coupled tissue, greatly underestimating the minimal gap junctional coupling that can maintain conduction. Our study suggests that ephaptic coupling plays a conduction-preserving role, particularly at rapid heart rates.

Structured back gates for high-mobility two-dimensional electron systems using oxygen ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berl, M., E-mail: mberl@phys.ethz.ch; Tiemann, L.; Dietsche, W.

2016-03-28

We present a reliable method to obtain patterned back gates compatible with high mobility molecular beam epitaxy via local oxygen ion implantation that suppresses the conductivity of an 80 nm thick silicon doped GaAs epilayer. Our technique was optimized to circumvent several constraints of other gating and implantation methods. The ion-implanted surface remains atomically flat which allows unperturbed epitaxial overgrowth. We demonstrate the practical application of this gating technique by using magneto-transport spectroscopy on a two-dimensional electron system (2DES) with a mobility exceeding 20 × 10{sup 6} cm{sup 2}/V s. The back gate was spatially separated from the Ohmic contacts of the 2DES,more » thus minimizing the probability for electrical shorts or leakage and permitting simple contacting schemes.« less

Weakly-tunable transmon qubits in a multi-qubit architecture

NASA Astrophysics Data System (ADS)

Hertzberg, Jared; Bronn, Nicholas; Corcoles, Antonio; Brink, Markus; Keefe, George; Takita, Maika; Hutchings, M.; Plourde, B. L. T.; Gambetta, Jay; Chow, Jerry

Quantum error-correction employing a 2D lattice of qubits requires a strong coupling between adjacent qubits and consistently high gate fidelity among them. In such a system, all-microwave cross-resonance gates offer simplicity of setup and operation. However, the relative frequencies of adjacent qubits must be carefully arranged in order to optimize gate rates and eliminate unwanted couplings. We discuss the incorporation of weakly-flux-tunable transmon qubits into such an architecture. Using DC tuning through filtered flux-bias lines, we adjust qubit frequencies while minimizing the effects of flux noise on decoherence.

Placement of clock gates in time-of-flight optoelectronic circuits

NASA Astrophysics Data System (ADS)

Feehrer, John R.; Jordan, Harry F.

1995-12-01

Time-of-flight synchronized optoelectronic circuits capitalize on the highly controllable delays of optical waveguides. Circuits have no latches; synchronization is achieved by adjustment of the lengths of waveguides that connect circuit elements. Clock gating and pulse stretching are used to restore timing and power. A functional circuit requires that every feedback loop contain at least one clock gate to prevent cumulative timing drift and power loss. A designer specifies an ideal circuit, which contains no or very few clock gates. To make the circuit functional, we must identify locations in which to place clock gates. Because clock gates are expensive, add area, and increase delay, a minimal set of locations is desired. We cast this problem in graph-theoretical form as the minimum feedback edge set problem and solve it by using an adaptation of an algorithm proposed in 1966 [IEEE Trans. Circuit Theory CT-13, 399 (1966)]. We discuss a computer-aided-design implementation of the algorithm that reduces computational complexity and demonstrate it on a set of circuits.

Improved two-photon imaging of living neurons in brain tissue through temporal gating

PubMed Central

Gautam, Vini; Drury, Jack; Choy, Julian M. C.; Stricker, Christian; Bachor, Hans-A.; Daria, Vincent R.

2015-01-01

We optimize two-photon imaging of living neurons in brain tissue by temporally gating an incident laser to reduce the photon flux while optimizing the maximum fluorescence signal from the acquired images. Temporal gating produces a bunch of ~10 femtosecond pulses and the fluorescence signal is improved by increasing the bunch-pulse energy. Gating is achieved using an acousto-optic modulator with a variable gating frequency determined as integral multiples of the imaging sampling frequency. We hypothesize that reducing the photon flux minimizes the photo-damage to the cells. Our results, however, show that despite producing a high fluorescence signal, cell viability is compromised when the gating and sampling frequencies are equal (or effectively one bunch-pulse per pixel). We found an optimum gating frequency range that maintains the viability of the cells while preserving a pre-set fluorescence signal of the acquired two-photon images. The neurons are imaged while under whole-cell patch, and the cell viability is monitored as a change in the membrane’s input resistance. PMID:26504651

Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

PubMed Central

Heo, Jae Sang; Choi, Seungbeom; Jo, Jeong-Wan; Kang, Jingu; Park, Ho-Hyun; Kim, Yong-Hoon; Park, Sung Kyu

2017-01-01

In this paper, we demonstrate high mobility solution-processed metal-oxide thin-film transistors (TFTs) by using a high-frequency-stable ionic-type hybrid gate dielectric (HGD). The HGD gate dielectric, a blend of sol-gel aluminum oxide (AlOx) and poly(4-vinylphenol) (PVP), exhibited high dielectric constant (ε~8.15) and high-frequency-stable characteristics (1 MHz). Using the ionic-type HGD as a gate dielectric layer, an minimal electron-double-layer (EDL) can be formed at the gate dielectric/InOx interface, enhancing the field-effect mobility of the TFTs. Particularly, using the ionic-type HGD gate dielectrics annealed at 350 °C, InOx TFTs having an average field-effect mobility of 16.1 cm2/Vs were achieved (maximum mobility of 24 cm2/Vs). Furthermore, the ionic-type HGD gate dielectrics can be processed at a low temperature of 150 °C, which may enable their applications in low-thermal-budget plastic and elastomeric substrates. In addition, we systematically studied the operational stability of the InOx TFTs using the HGD gate dielectric, and it was observed that the HGD gate dielectric effectively suppressed the negative threshold voltage shift during the negative-illumination-bias stress possibly owing to the recombination of hole carriers injected in the gate dielectric with the negatively charged ionic species in the HGD gate dielectric. PMID:28772972

Dependence of electrical and time stress in organic field effect transistor with low temperature forming gas treated Al2O3 gate dielectrics.

PubMed

Lee, Sunwoo; Chung, Keum Jee; Park, In-Sung; Ahn, Jinho

2009-12-01

We report the characteristics of the organic field effect transistor (OFET) after electrical and time stress. Aluminum oxide (Al2O3) was used as a gate dielectric layer. The surface of the gate oxide layer was treated with hydrogen (H2) and nitrogen (N2) mixed gas to minimize the dangling bond at the interface layer of gate oxide. According to the two stress parameters of electrical and time stress, threshold voltage shift was observed. In particular, the mobility and subthreshold swing of OFET were significantly decreased due to hole carrier localization and degradation of the channel layer between gate oxide and pentacene by electrical stress. Electrical stress is a more critical factor in the degradation of mobility than time stress caused by H2O and O2 in the air.

Laser-induced dental caries and plaque diagnosis on patients by sensitive autofluorescence spectroscopy and time-gated video imaging: preliminary studies

NASA Astrophysics Data System (ADS)

Koenig, Karsten; Schneckenburger, Herbert

1994-09-01

The laser-induced in vivo autofluorescence of human teeth was investigated by means of time- resolved/time-gated fluorescence techniques. The aim of these studies was non-contact caries and plaque detection. Carious lesions and dental plaque fluoresce in the red spectral region. This autofluorescence seems to be based on porphyrin-producing bacteria. We report on preliminary studies on patients using a novel method of autofluorescence imaging. A special device was constructed for time-gated video imaging. Nanosecond laser pulses for fluorescence excitation were provided by a frequency-doubled, Q-switched Nd:YAG laser. Autofluorescence was detected in an appropriate nanosecond time window using a video camera with a time-gated image intensifier (minimal time gate: 5 ns). Laser-induced autofluorescence based on porphyrin-producing bacteria seems to be an appropriate tool for detecting dental lesions and for creating `caries-images' and `dental plaque' images.

The use of three-parameter rating table lookup programs, RDRAT and PARM3, in hydraulic flow models

USGS Publications Warehouse

Sanders, C.L.

1995-01-01

Subroutines RDRAT and PARM3 enable computer programs such as the BRANCH open-channel unsteady-flow model to route flows through or over combinations of critical-flow sections, culverts, bridges, road- overflow sections, fixed spillways, and(or) dams. The subroutines also obstruct upstream flow to simulate operation of flapper-type tide gates. A multiplier can be applied by date and time to simulate varying numbers of tide gates being open or alternative construction scenarios for multiple culverts. The subroutines use three-parameter (headwater, tailwater, and discharge) rating table lookup methods. These tables may be manually prepared using other programs that do step-backwater computations or compute flow through bridges and culverts or over dams. The subroutine, therefore, precludes the necessity of incorporating considerable hydraulic computational code into the client program, and provides complete flexibility for users of the model for routing flow through almost any affixed structure or combination of structures. The subroutines are written in Fortran 77 language, and have minimal exchange of information with the BRANCH model or other possible client programs. The report documents the interpolation methodology, data input requirements, and software.

Energy minimization of mobile video devices with a hardware H.264/AVC encoder based on energy-rate-distortion optimization

NASA Astrophysics Data System (ADS)

Kang, Donghun; Lee, Jungeon; Jung, Jongpil; Lee, Chul-Hee; Kyung, Chong-Min

2014-09-01

In mobile video systems powered by battery, reducing the encoder's compression energy consumption is critical to prolong its lifetime. Previous Energy-rate-distortion (E-R-D) optimization methods based on a software codec is not suitable for practical mobile camera systems because the energy consumption is too large and encoding rate is too low. In this paper, we propose an E-R-D model for the hardware codec based on the gate-level simulation framework to measure the switching activity and the energy consumption. From the proposed E-R-D model, an energy minimizing algorithm for mobile video camera sensor have been developed with the GOP (Group of Pictures) size and QP(Quantization Parameter) as run-time control variables. Our experimental results show that the proposed algorithm provides up to 31.76% of energy consumption saving while satisfying the rate and distortion constraints.

Characteristics Of Ferroelectric Logic Gates Using a Spice-Based Model

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

2005-01-01

A SPICE-based model of an n-channel ferroelectric field effect transistor has been developed based on both theoretical and empirical data. This model was used to generate the I-V characteristic of several logic gates. The use of ferroelectric field effect transistors in memory circuits is being developed by several organizations. The use of FFETs in other circuits, both analog and digital needs to be better understood. The ability of FFETs to have different characteristics depending on the initial polarization can be used to create logic gates. These gates can have properties not available to standard CMOS logic gates, such as memory, reconfigurability and memory. This paper investigates basic properties of FFET logic gates. It models FFET inverter, NAND gate and multi-input NAND gate. The I-V characteristics of the gates are presented as well as transfer characteristics and timing. The model used is a SPICE-based model developed from empirical data from actual Ferroelectric transistors. It simulates all major characteristics of the ferroelectric transistor, including polarization, hysteresis and decay. Contrasts are made of the differences between FFET logic gates and CMOS logic gates. FFET parameters are varied to show the effect on the overall gate. A recodigurable gate is investigated which is not possible with CMOS circuits. The paper concludes that FFETs can be used in logic gates and have several advantages over standard CMOS gates.

A margin model to account for respiration-induced tumour motion and its variability

NASA Astrophysics Data System (ADS)

Coolens, Catherine; Webb, Steve; Shirato, H.; Nishioka, K.; Evans, Phil M.

2008-08-01

In order to reduce the sensitivity of radiotherapy treatments to organ motion, compensation methods are being investigated such as gating of treatment delivery, tracking of tumour position, 4D scanning and planning of the treatment, etc. An outstanding problem that would occur with all these methods is the assumption that breathing motion is reproducible throughout the planning and delivery process of treatment. This is obviously not a realistic assumption and is one that will introduce errors. A dynamic internal margin model (DIM) is presented that is designed to follow the tumour trajectory and account for the variability in respiratory motion. The model statistically describes the variation of the breathing cycle over time, i.e. the uncertainty in motion amplitude and phase reproducibility, in a polar coordinate system from which margins can be derived. This allows accounting for an additional gating window parameter for gated treatment delivery as well as minimizing the area of normal tissue irradiated. The model was illustrated with abdominal motion for a patient with liver cancer and tested with internal 3D lung tumour trajectories. The results confirm that the respiratory phases around exhale are most reproducible and have the smallest variation in motion amplitude and phase (approximately 2 mm). More importantly, the margin area covering normal tissue is significantly reduced by using trajectory-specific margins (as opposed to conventional margins) as the angular component is by far the largest contributor to the margin area. The statistical approach to margin calculation, in addition, offers the possibility for advanced online verification and updating of breathing variation as more data become available.

A single Markov-type kinetic model accounting for the macroscopic currents of all human voltage-gated sodium channel isoforms.

PubMed

Balbi, Pietro; Massobrio, Paolo; Hellgren Kotaleski, Jeanette

2017-09-01

Modelling ionic channels represents a fundamental step towards developing biologically detailed neuron models. Until recently, the voltage-gated ion channels have been mainly modelled according to the formalism introduced by the seminal works of Hodgkin and Huxley (HH). However, following the continuing achievements in the biophysical and molecular comprehension of these pore-forming transmembrane proteins, the HH formalism turned out to carry limitations and inconsistencies in reproducing the ion-channels electrophysiological behaviour. At the same time, Markov-type kinetic models have been increasingly proven to successfully replicate both the electrophysiological and biophysical features of different ion channels. However, in order to model even the finest non-conducting molecular conformational change, they are often equipped with a considerable number of states and related transitions, which make them computationally heavy and less suitable for implementation in conductance-based neurons and large networks of those. In this purely modelling study we develop a Markov-type kinetic model for all human voltage-gated sodium channels (VGSCs). The model framework is detailed, unifying (i.e., it accounts for all ion-channel isoforms) and computationally efficient (i.e. with a minimal set of states and transitions). The electrophysiological data to be modelled are gathered from previously published studies on whole-cell patch-clamp experiments in mammalian cell lines heterologously expressing the human VGSC subtypes (from NaV1.1 to NaV1.9). By adopting a minimum sequence of states, and using the same state diagram for all the distinct isoforms, the model ensures the lightest computational load when used in neuron models and neural networks of increasing complexity. The transitions between the states are described by original ordinary differential equations, which represent the rate of the state transitions as a function of voltage (i.e., membrane potential). The kinetic model, developed in the NEURON simulation environment, appears to be the simplest and most parsimonious way for a detailed phenomenological description of the human VGSCs electrophysiological behaviour.

Compiling quantum circuits to realistic hardware architectures using temporal planners

NASA Astrophysics Data System (ADS)

Venturelli, Davide; Do, Minh; Rieffel, Eleanor; Frank, Jeremy

2018-04-01

To run quantum algorithms on emerging gate-model quantum hardware, quantum circuits must be compiled to take into account constraints on the hardware. For near-term hardware, with only limited means to mitigate decoherence, it is critical to minimize the duration of the circuit. We investigate the application of temporal planners to the problem of compiling quantum circuits to newly emerging quantum hardware. While our approach is general, we focus on compiling to superconducting hardware architectures with nearest neighbor constraints. Our initial experiments focus on compiling Quantum Alternating Operator Ansatz (QAOA) circuits whose high number of commuting gates allow great flexibility in the order in which the gates can be applied. That freedom makes it more challenging to find optimal compilations but also means there is a greater potential win from more optimized compilation than for less flexible circuits. We map this quantum circuit compilation problem to a temporal planning problem, and generated a test suite of compilation problems for QAOA circuits of various sizes to a realistic hardware architecture. We report compilation results from several state-of-the-art temporal planners on this test set. This early empirical evaluation demonstrates that temporal planning is a viable approach to quantum circuit compilation.

Hybrid architecture for encoded measurement-based quantum computation

PubMed Central

Zwerger, M.; Briegel, H. J.; Dür, W.

2014-01-01

We present a hybrid scheme for quantum computation that combines the modular structure of elementary building blocks used in the circuit model with the advantages of a measurement-based approach to quantum computation. We show how to construct optimal resource states of minimal size to implement elementary building blocks for encoded quantum computation in a measurement-based way, including states for error correction and encoded gates. The performance of the scheme is determined by the quality of the resource states, where within the considered error model a threshold of the order of 10% local noise per particle for fault-tolerant quantum computation and quantum communication. PMID:24946906

Statistical Determination of the Gating Windows for Respiratory-Gated Radiotherapy Using a Visible Guiding System.

PubMed

Oh, Se An; Yea, Ji Woon; Kim, Sung Kyu

2016-01-01

Respiratory-gated radiation therapy (RGRT) is used to minimize the radiation dose to normal tissue in lung-cancer patients. Although determining the gating window in the respiratory phase of patients is important in RGRT, it is not easy. Our aim was to determine the optimal gating window when using a visible guiding system for RGRT. Between April and October 2014, the breathing signals of 23 lung-cancer patients were recorded with a real-time position management (RPM) respiratory gating system (Varian, USA). We performed statistical analysis with breathing signals to find the optimal gating window for guided breathing in RGRT. When we compared breathing signals before and after the breathing training, 19 of the 23 patients showed statistically significant differences (p < 0.05). The standard deviation of the respiration signals after breathing training was lowest for phases of 30%-70%. The results showed that the optimal gating window in RGRT is 40% (30%-70%) with respect to repeatability for breathing after respiration training with the visible guiding system. RGRT was performed with the RPM system to confirm the usefulness of the visible guiding system. The RPM system and our visible guiding system improve the respiratory regularity, which in turn should improve the accuracy and efficiency of RGRT.

Performance analysis of SiGe double-gate N-MOSFET

NASA Astrophysics Data System (ADS)

Singh, A.; Kapoor, D.; Sharma, R.

2017-04-01

The major purpose of this paper is to find an alternative configuration that not only minimizes the limitations of single-gate (SG) MOSFETs but also provides the better replacement for future technology. In this paper, the electrical characteristics of SiGe double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si double-gate N-MOSFET. Furthermore, in this paper the electrical characteristics of Si double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si single-gate N-MOSFET. The simulations are carried out for the device at different operational voltages using Cogenda Visual TCAD tool. Moreover, we have designed its structure and studied both {I}{{d}}{-}{V}{{g}} characteristics for different voltages namely 0.05, 0.1, 0.5, 0.8, 1 and 1.5 V and {I}{{d}}{-}{V}{{d}} characteristics for different voltages namely 0.1, 0.5, 1 and 1.5 V at work functions 4.5, 4.6 and 4.8 eV for this structure. The performance parameters investigated in this paper are threshold voltage, DIBL, subthreshold slope, GIDL, volume inversion and MMCR.

Short-Channel Tunneling Field-Effect Transistor with Drain-Overlap and Dual-Metal Gate Structure for Low-Power and High-Speed Operations.

PubMed

Yoon, Young Jun; Eun, Hye Rim; Seo, Jae Hwa; Kang, Hee-Sung; Lee, Seong Min; Lee, Jeongmin; Cho, Seongjae; Tae, Heung-Sik; Lee, Jung-Hee; Kang, In Man

2015-10-01

We have investigated and proposed a highly scaled tunneling field-effect transistor (TFET) based on Ge/GaAs heterojunction with a drain overlap to suppress drain-induced barrier thinning (DIBT) and improve low-power (LP) performance. The highly scaled TFET with a drain overlap achieves lower leakage tunneling current because of the decrease in tunneling events between the source and drain, whereas a typical short-channel TFET suffers from a great deal of tunneling leakage current due to the DIBT at the off-state. However, the drain overlap inevitably increases the gate-to-drain capacitance (Cgd) because of the increase in the overlap capacitance (Cov) and inversion capacitance (Cinv). Thus, in this work, a dual-metal gate structure is additionally applied along with the drain overlap. The current performance and the total gate capacitance (Cgg) of the device with a dual-metal gate can be possibly controlled by adjusting the metal gate workfunction (φgate) and φoverlap-gate in the overlapping regions. As a result, the intrinsic delay time (τ) is greatly reduced by obtaining lower Cgg divided by the on-state current (Ion), i.e., Cgg/Ion. We have successfully demonstrated excellent LP and high-speed performance of a highly scaled TFET by adopting both drain overlap and dual-metal gate with DIBT minimization.

UV gated Raman spectroscopy for standoff detection of explosives

NASA Astrophysics Data System (ADS)

Gaft, M.; Nagli, L.

2008-07-01

Real-time detection and identification of explosives at a standoff distance is a major issue in efforts to develop defense against so-called improvised explosive devices (IED). It is recognized that the only method, which is potentially capable to standoff detection of minimal amounts of explosives is laser-based spectroscopy. LDS technique belongs to trace detection, namely to its micro-particles variety. It is based on commonly held belief that surface contamination was very difficult to avoid and could be exploited for standoff detection. We have applied gated Raman spectroscopy for detection of main explosive materials, both factory and homemade. We developed and tested a Raman system for the field remote detection and identification of minimal amounts of explosives on relevant surfaces at a distance of up to 30 m.

Measurement of transverse emittance and coherence of double-gate field emitter array cathodes

PubMed Central

Tsujino, Soichiro; Das Kanungo, Prat; Monshipouri, Mahta; Lee, Chiwon; Miller, R.J. Dwayne

2016-01-01

Achieving small transverse beam emittance is important for high brightness cathodes for free electron lasers and electron diffraction and imaging experiments. Double-gate field emitter arrays with on-chip focussing electrode, operating with electrical switching or near infrared laser excitation, have been studied as cathodes that are competitive with photocathodes excited by ultraviolet lasers, but the experimental demonstration of the low emittance has been elusive. Here we demonstrate this for a field emitter array with an optimized double-gate structure by directly measuring the beam characteristics. Further we show the successful application of the double-gate field emitter array to observe the low-energy electron beam diffraction from suspended graphene in minimal setup. The observed low emittance and long coherence length are in good agreement with theory. These results demonstrate that our all-metal double-gate field emitters are highly promising for applications that demand extremely low-electron bunch-phase space volume and large transverse coherence. PMID:28008918

Measurement of transverse emittance and coherence of double-gate field emitter array cathodes

NASA Astrophysics Data System (ADS)

Tsujino, Soichiro; Das Kanungo, Prat; Monshipouri, Mahta; Lee, Chiwon; Miller, R. J. Dwayne

2016-12-01

Achieving small transverse beam emittance is important for high brightness cathodes for free electron lasers and electron diffraction and imaging experiments. Double-gate field emitter arrays with on-chip focussing electrode, operating with electrical switching or near infrared laser excitation, have been studied as cathodes that are competitive with photocathodes excited by ultraviolet lasers, but the experimental demonstration of the low emittance has been elusive. Here we demonstrate this for a field emitter array with an optimized double-gate structure by directly measuring the beam characteristics. Further we show the successful application of the double-gate field emitter array to observe the low-energy electron beam diffraction from suspended graphene in minimal setup. The observed low emittance and long coherence length are in good agreement with theory. These results demonstrate that our all-metal double-gate field emitters are highly promising for applications that demand extremely low-electron bunch-phase space volume and large transverse coherence.

Implementing a Microcontroller Watchdog with a Field-Programmable Gate Array (FPGA)

NASA Technical Reports Server (NTRS)

Straka, Bartholomew

2013-01-01

Reliability is crucial to safety. Redundancy of important system components greatly enhances reliability and hence safety. Field-Programmable Gate Arrays (FPGAs) are useful for monitoring systems and handling the logic necessary to keep them running with minimal interruption when individual components fail. A complete microcontroller watchdog with logic for failure handling can be implemented in a hardware description language (HDL.). HDL-based designs are vendor-independent and can be used on many FPGAs with low overhead.

Novel conformal organic antireflective coatings for advanced I-line lithography

NASA Astrophysics Data System (ADS)

Deshpande, Shreeram V.; Nowak, Kelly A.; Fowler, Shelly; Williams, Paul; Arjona, Mikko

2001-08-01

Flash memory chips are playing a critical role in semiconductor devices due to increased popularity of hand held electronic communication devices such as cell phones and PDAs (personal Digital Assistants). Flash memory offers two primary advantages in semiconductor devices. First, it offers flexibility of in-circuit programming capability to reduce the loss from programming errors and to significantly reduce commercialization time to market for new devices. Second, flash memory has a double density memory capability through stacked gate structures which increases the memory capability and thus saves significantly on chip real estate. However, due to stacked gate structures the requirements for manufacturing of flash memory devices are significantly different from traditional memory devices. Stacked gate structures also offer unique challenges to lithographic patterning materials such as Bottom Anti-Reflective Coating (BARC) compositions used to achieve CD control and to minimize standing wave effect in photolithography. To be applicable in flash memory manufacturing a BARC should form a conformal coating on high topography of stacked gate features as well as provide the normal anti-reflection properties for CD control. In this paper we report on a new highly conformal advanced i-line BARC for use in design and manufacture of flash memory devices. Conformal BARCs being significantly thinner in trenches than the planarizing BARCs offer the advantage of reducing BARC overetch and thus minimizing resist thickness loss.

Simulation and video animation of canal flushing created by a tide gate

USGS Publications Warehouse

Schoellhamer, David H.

1988-01-01

A tide-gate algorithm was added to a one-dimensional unsteady flow model that was calibrated, verified, and used to determine the locations of as many as five tide gates that would maximize flushing in two canal systems. Results from the flow model were used to run a branched Lagrangian transport model to simulate the flushing of a conservative constituent from the canal systems both with and without tide gates. A tide gate produces a part-time riverine flow through the canal system that improves flushing along the flow path created by the tide gate. Flushing with no tide gates and with a single optimally located tide gate are shown with a video animation.

High-performance colorimeter with an electronic bubble gate for use in miniaturized continuous-flow analyzers.

PubMed

Neeley, W E; Wardlaw, S C; Yates, T; Hollingsworth, W G; Swinnen, M E

1976-02-01

We describe a high-performance colorimeter with an electronic bubble gate for use with miniaturized continuous-flow analyzers. The colorimeter has a flow-through cuvette with optically flat quartz windows that allows a bubbled stream to pass freely without any breakup or retention of bubbles. The fluid volume in the light path is only 1.8 mul. The electronic bubble gate selectively removes that portion of the photodector signal produced by the air bubbles passing through the flow cell and allows that portion of the signal attributable to the fluid segment to pass to the recorder. The colorimeter is easy to use, rugged, inexpensive, and requires minimal adjustments.

Queue theory for triangular and weibull arrival distribution models (case study of Banyumanik toll)

NASA Astrophysics Data System (ADS)

Sugito; Rahmawati, Rita; Kusuma Wardhani, Jenesia

2018-05-01

Queuing is one of the most common phenomena in daily life. Queued also happens on highway during busy time. The Electronic Toll Collection (ETC) was the new system of the Banyumanik toll gate which operates in 2014. Before ETC, Banyumanik toll gate users got regular service (regular toll gate) by paying in cash only. The ETC benefits more than regular service, but automatic toll gate (ETC) users are still few compared to regular toll gate users. To know the effectiveness of substance service, this paper used analysis of queuing system. The research was conducted at Toll Gate Banyumanik with the implementation time on 26-28 December 2016 for Ungaran-Semarang direction, and 29-31 December 2016 for Semarang- Ungaran direction. In one day, observation was done for 11 hours. That was at 07.00 a.m. until 06.00 p.m. There are 4 models of queues at Banyumanik toll gate. Here the four models will be used on the number of arrival and service time. Based on the simulation with Arena, the result showed that queue model regular toll gate in Ugaran-Semarang direction is (Tria/G/3):(GD/∞/∞) and the queue model for automatic toll gate is (G/G/3):(GD/∞/∞). While the queue model for the direction of Semarang-Ungaran regular toll gate is (G/G/3):(GD/∞/∞) and the queue model of automatic toll gate is (Weib/G/3):(GD/∞/∞).

Sliding-gate valve

DOEpatents

Usnick, George B.; Ward, Gene T.; Blair, Henry O.; Roberts, James W.; Warner, Terry N.

1979-01-01

This invention is a novel valve of the slidable-gate type. The valve is designed especially for long-term use with highly abrasive slurries. The sealing surfaces of the gate are shielded by the valve seats when the valve is fully open or closed, and the gate-to-seat clearance is swept with an inflowing purge gas while the gate is in transit. A preferred form of the valve includes an annular valve body containing an annular seat assembly defining a flow channel. The seat assembly comprises a first seat ring which is slidably and sealably mounted in the body, and a second seat ring which is tightly fitted in the body. These rings cooperatively define an annular gap which, together with passages in the valve body, forms a guideway extending normal to the channel. A plate-type gate is mounted for reciprocation in the guideway between positions where a portion of the plate closes the channel and where a circular aperture in the gate is in register with the channel. The valve casing includes opposed chambers which extend outwardly from the body along the axis of the guideway to accommodate the end portions of the gate. The chambers are sealed from atmosphere; when the gate is in transit, purge gas is admitted to the chambers and flows inwardly through the gate-to-seat-ring, clearance, minimizing buildup of process solids therein. A shaft reciprocated by an external actuator extends into one of the sealed chambers through a shaft seal and is coupled to an end of the gate. Means are provided for adjusting the clearance between the first seat ring and the gate while the valve is in service.

Interference-free optical detection for Raman spectroscopy

NASA Technical Reports Server (NTRS)

Fischer, David G (Inventor); Kojima, Jun (Inventor); Nguyen, Quang-Viet (Inventor)

2012-01-01

An architecture for spontaneous Raman scattering (SRS) that utilizes a frame-transfer charge-coupled device (CCD) sensor operating in a subframe burst gating mode to realize time-resolved combustion diagnostics is disclosed. The technique permits all-electronic optical gating with microsecond shutter speeds (<5 .mu.s), without compromising optical throughput or image fidelity. When used in conjunction with a pair of orthogonally-polarized excitation lasers, the technique measures time-resolved vibrational Raman scattering that is minimally contaminated by problematic optical background noise.

Micromotion-enabled improvement of quantum logic gates with trapped ions

NASA Astrophysics Data System (ADS)

Bermudez, Alejandro; Schindler, Philipp; Monz, Thomas; Blatt, Rainer; Müller, Markus

2017-11-01

The micromotion of ion crystals confined in Paul traps is usually considered an inconvenient nuisance, and is thus typically minimized in high-precision experiments such as high-fidelity quantum gates for quantum information processing (QIP). In this work, we introduce a particular scheme where this behavior can be reversed, making micromotion beneficial for QIP. We show that using laser-driven micromotion sidebands, it is possible to engineer state-dependent dipole forces with a reduced effect of off-resonant couplings to the carrier transition. This allows one, in a certain parameter regime, to devise entangling gate schemes based on geometric phase gates with both a higher speed and a lower error, which is attractive in light of current efforts towards fault-tolerant QIP. We discuss the prospects of reaching the parameters required to observe this micromotion-enabled improvement in experiments with current and future trap designs.

Crosstalk error correction through dynamical decoupling of single-qubit gates in capacitively coupled singlet-triplet semiconductor spin qubits

NASA Astrophysics Data System (ADS)

Buterakos, Donovan; Throckmorton, Robert E.; Das Sarma, S.

2018-01-01

In addition to magnetic field and electric charge noise adversely affecting spin-qubit operations, performing single-qubit gates on one of multiple coupled singlet-triplet qubits presents a new challenge: crosstalk, which is inevitable (and must be minimized) in any multiqubit quantum computing architecture. We develop a set of dynamically corrected pulse sequences that are designed to cancel the effects of both types of noise (i.e., field and charge) as well as crosstalk to leading order, and provide parameters for these corrected sequences for all 24 of the single-qubit Clifford gates. We then provide an estimate of the error as a function of the noise and capacitive coupling to compare the fidelity of our corrected gates to their uncorrected versions. Dynamical error correction protocols presented in this work are important for the next generation of singlet-triplet qubit devices where coupling among many qubits will become relevant.

High-frequency self-aligned graphene transistors with transferred gate stacks.

PubMed

Cheng, Rui; Bai, Jingwei; Liao, Lei; Zhou, Hailong; Chen, Yu; Liu, Lixin; Lin, Yung-Chen; Jiang, Shan; Huang, Yu; Duan, Xiangfeng

2012-07-17

Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on a sacrificial substrate, and then transferred onto arbitrary substrates with graphene on top. A self-aligned process, enabled by the unique structure of the transferred gate stacks, is then used to position precisely the source and drain electrodes with minimized access resistance or parasitic capacitance. This process has therefore enabled scalable fabrication of self-aligned graphene transistors with unprecedented performance including a record-high cutoff frequency up to 427 GHz. Our study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra-high-frequency circuits.

Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects

NASA Astrophysics Data System (ADS)

Shin, Yong Hyeon; Bae, Min Soo; Park, Chuntaek; Park, Joung Won; Park, Hyunwoo; Lee, Yong Ju; Yun, Ilgu

2018-06-01

A universal core model for multiple-gate (MG) field-effect transistors (FETs) with short channel effects (SCEs) and quantum mechanical effects (QMEs) is proposed. By using a Young’s approximation based solution for one-dimensional Poisson’s equations the total inversion charge density (Q inv ) in the channel is modeled for double-gate (DG) and surrounding-gate SG (SG) FETs, following which a universal charge model is derived based on the similarity of the solutions, including for quadruple-gate (QG) FETs. For triple-gate (TG) FETs, the average of DG and QG FETs are used. A SCEs model is also proposed considering the potential difference between the channel’s surface and center. Finally, a QMEs model for MG FETs is developed using the quantum correction compact model. The proposed universal core model is validated on commercially available three-dimensional ATLAS numerical simulations.

Characterization of a vertically movable gate field effect transistor using a silicon-on-insulator wafer

NASA Astrophysics Data System (ADS)

Song, In-Hyouk; Forfang, William B. D.; Cole, Bryan; You, Byoung Hee

2014-10-01

The vertically movable gate field effect transistor (VMGFET) is a FET-based sensing element, whose gate moves in a vertical direction over the channel. A VMGFET gate covers the region between source and drain. A 1 μm thick air layer separates the gate and the substrate of the VMGFET. A novel fabrication process to form a VMGFET using a silicon-on-insulator (SOI) wafer provides minimal internal stress of the gate structure. The enhancement-type n-channel VMGFET is fabricated with the threshold voltage of 2.32 V in steady state. A non-inverting amplifier is designed and integrated on a printable circuit board (PCB) to characterize device sensitivity and mechanical properties. The VMGFET is mechanically coupled to a speaker membrane to apply mechanical vibration. The oscillated drain current of FET are monitored and sampled with NI LabVIEW. The frequency of the output signal correlates with that of the input stimulus. The resonance frequency of the fabricated VMGFET is measured to be 1.11 kHz. The device sensitivity linearly increases by 0.106 mV/g Hz in the range of 150 Hz and 1 kHz.

Degradation of CMOS image sensors in deep-submicron technology due to γ-irradiation

NASA Astrophysics Data System (ADS)

Rao, Padmakumar R.; Wang, Xinyang; Theuwissen, Albert J. P.

2008-09-01

In this work, radiation induced damage mechanisms in deep submicron technology is resolved using finger gated-diodes (FGDs) as a radiation sensitive tool. It is found that these structures are simple yet efficient structures to resolve radiation induced damage in advanced CMOS processes. The degradation of the CMOS image sensors in deep-submicron technology due to γ-ray irradiation is studied by developing a model for the spectral response of the sensor and also by the dark-signal degradation as a function of STI (shallow-trench isolation) parameters. It is found that threshold shifts in the gate-oxide/silicon interface as well as minority carrier life-time variations in the silicon bulk are minimal. The top-layer material properties and the photodiode Si-SiO2 interface quality are degraded due to γ-ray irradiation. Results further suggest that p-well passivated structures are inevitable for radiation-hard designs. It was found that high electrical fields in submicron technologies pose a threat to high quality imaging in harsh environments.

Graphene-graphite oxide field-effect transistors.

PubMed

Standley, Brian; Mendez, Anthony; Schmidgall, Emma; Bockrath, Marc

2012-03-14

Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO(2) or HfO(2). In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO(2), typically ~1-3 × 10(8) V/m, while its dielectric constant is slightly higher, κ ≈ 4.3. © 2012 American Chemical Society

CUTSETS - MINIMAL CUT SET CALCULATION FOR DIGRAPH AND FAULT TREE RELIABILITY MODELS

NASA Technical Reports Server (NTRS)

Iverson, D. L.

1994-01-01

Fault tree and digraph models are frequently used for system failure analysis. Both type of models represent a failure space view of the system using AND and OR nodes in a directed graph structure. Fault trees must have a tree structure and do not allow cycles or loops in the graph. Digraphs allow any pattern of interconnection between loops in the graphs. A common operation performed on digraph and fault tree models is the calculation of minimal cut sets. A cut set is a set of basic failures that could cause a given target failure event to occur. A minimal cut set for a target event node in a fault tree or digraph is any cut set for the node with the property that if any one of the failures in the set is removed, the occurrence of the other failures in the set will not cause the target failure event. CUTSETS will identify all the minimal cut sets for a given node. The CUTSETS package contains programs that solve for minimal cut sets of fault trees and digraphs using object-oriented programming techniques. These cut set codes can be used to solve graph models for reliability analysis and identify potential single point failures in a modeled system. The fault tree minimal cut set code reads in a fault tree model input file with each node listed in a text format. In the input file the user specifies a top node of the fault tree and a maximum cut set size to be calculated. CUTSETS will find minimal sets of basic events which would cause the failure at the output of a given fault tree gate. The program can find all the minimal cut sets of a node, or minimal cut sets up to a specified size. The algorithm performs a recursive top down parse of the fault tree, starting at the specified top node, and combines the cut sets of each child node into sets of basic event failures that would cause the failure event at the output of that gate. Minimal cut set solutions can be found for all nodes in the fault tree or just for the top node. The digraph cut set code uses the same techniques as the fault tree cut set code, except it includes all upstream digraph nodes in the cut sets for a given node and checks for cycles in the digraph during the solution process. CUTSETS solves for specified nodes and will not automatically solve for all upstream digraph nodes. The cut sets will be output as a text file. CUTSETS includes a utility program that will convert the popular COD format digraph model description files into text input files suitable for use with the CUTSETS programs. FEAT (MSC-21873) and FIRM (MSC-21860) available from COSMIC are examples of programs that produce COD format digraph model description files that may be converted for use with the CUTSETS programs. CUTSETS is written in C-language to be machine independent. It has been successfully implemented on a Sun running SunOS, a DECstation running ULTRIX, a Macintosh running System 7, and a DEC VAX running VMS. The RAM requirement varies with the size of the models. CUTSETS is available in UNIX tar format on a .25 inch streaming magnetic tape cartridge (standard distribution) or on a 3.5 inch diskette. It is also available on a 3.5 inch Macintosh format diskette or on a 9-track 1600 BPI magnetic tape in DEC VAX FILES-11 format. Sample input and sample output are provided on the distribution medium. An electronic copy of the documentation in Macintosh Microsoft Word format is included on the distribution medium. Sun and SunOS are trademarks of Sun Microsystems, Inc. DEC, DeCstation, ULTRIX, VAX, and VMS are trademarks of Digital Equipment Corporation. UNIX is a registered trademark of AT&T Bell Laboratories. Macintosh is a registered trademark of Apple Computer, Inc.

High-Resolution Inkjet-Printed Oxide Thin-Film Transistors with a Self-Aligned Fine Channel Bank Structure.

PubMed

Zhang, Qing; Shao, Shuangshuang; Chen, Zheng; Pecunia, Vincenzo; Xia, Kai; Zhao, Jianwen; Cui, Zheng

2018-05-09

A self-aligned inkjet printing process has been developed to construct small channel metal oxide (a-IGZO) thin-film transistors (TFTs) with independent bottom gates on transparent glass substrates. Poly(methylsilsesquioxane) was used to pattern hydrophobic banks on the transparent substrate instead of commonly used self-assembled octadecyltrichlorosilane. Photolithographic exposure from backside using bottom-gate electrodes as mask formed hydrophilic channel areas for the TFTs. IGZO ink was selectively deposited by an inkjet printer in the hydrophilic channel region and confined by the hydrophobic bank structure, resulting in the precise deposition of semiconductor layers just above the gate electrodes. Inkjet-printed IGZO TFTs with independent gate electrodes of 10 μm width have been demonstrated, avoiding completely printed channel beyond the broad of the gate electrodes. The TFTs showed on/off ratios of 10 8 , maximum mobility of 3.3 cm 2 V -1 s -1 , negligible hysteresis, and good uniformity. This method is conductive to minimizing the area of printed TFTs so as to the development of high-resolution printing displays.

Cardiac sodium channel Markov model with temperature dependence and recovery from inactivation.

PubMed Central

Irvine, L A; Jafri, M S; Winslow, R L

1999-01-01

A Markov model of the cardiac sodium channel is presented. The model is similar to the CA1 hippocampal neuron sodium channel model developed by Kuo and Bean (1994. Neuron. 12:819-829) with the following modifications: 1) an additional open state is added; 2) open-inactivated transitions are made voltage-dependent; and 3) channel rate constants are exponential functions of enthalpy, entropy, and voltage and have explicit temperature dependence. Model parameters are determined using a simulated annealing algorithm to minimize the error between model responses and various experimental data sets. The model reproduces a wide range of experimental data including ionic currents, gating currents, tail currents, steady-state inactivation, recovery from inactivation, and open time distributions over a temperature range of 10 degrees C to 25 degrees C. The model also predicts measures of single channel activity such as first latency, probability of a null sweep, and probability of reopening. PMID:10096885

Quantum gates with controlled adiabatic evolutions

NASA Astrophysics Data System (ADS)

Hen, Itay

2015-02-01

We introduce a class of quantum adiabatic evolutions that we claim may be interpreted as the equivalents of the unitary gates of the quantum gate model. We argue that these gates form a universal set and may therefore be used as building blocks in the construction of arbitrary "adiabatic circuits," analogously to the manner in which gates are used in the circuit model. One implication of the above construction is that arbitrary classical boolean circuits as well as gate model circuits may be directly translated to adiabatic algorithms with no additional resources or complexities. We show that while these adiabatic algorithms fail to exhibit certain aspects of the inherent fault tolerance of traditional quantum adiabatic algorithms, they may have certain other experimental advantages acting as quantum gates.

Decision Support Model for Optimal Management of Coastal Gate

NASA Astrophysics Data System (ADS)

Ditthakit, Pakorn; Chittaladakorn, Suwatana

2010-05-01

The coastal areas are intensely settled by human beings owing to their fertility of natural resources. However, at present those areas are facing with water scarcity problems: inadequate water and poor water quality as a result of saltwater intrusion and inappropriate land-use management. To solve these problems, several measures have been exploited. The coastal gate construction is a structural measure widely performed in several countries. This manner requires the plan for suitably operating coastal gates. Coastal gate operation is a complicated task and usually concerns with the management of multiple purposes, which are generally conflicted one another. This paper delineates the methodology and used theories for developing decision support modeling for coastal gate operation scheduling. The developed model was based on coupling simulation and optimization model. The weighting optimization technique based on Differential Evolution (DE) was selected herein for solving multiple objective problems. The hydrodynamic and water quality models were repeatedly invoked during searching the optimal gate operations. In addition, two forecasting models:- Auto Regressive model (AR model) and Harmonic Analysis model (HA model) were applied for forecasting water levels and tide levels, respectively. To demonstrate the applicability of the developed model, it was applied to plan the operations for hypothetical system of Pak Phanang coastal gate system, located in Nakhon Si Thammarat province, southern part of Thailand. It was found that the proposed model could satisfyingly assist decision-makers for operating coastal gates under various environmental, ecological and hydraulic conditions.

Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Mao, Ling-Feng; Ning, Huansheng; Huo, Zong-Liang; Wang, Jin-Yan

2015-12-01

A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (>20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs.

Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors.

PubMed

Mao, Ling-Feng; Ning, Huansheng; Huo, Zong-Liang; Wang, Jin-Yan

2015-12-17

A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (>20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs.

All diamond self-aligned thin film transistor

DOEpatents

Gerbi, Jennifer [Champaign, IL

2008-07-01

A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically conductive diamond layer. An electrically insulating diamond layer is in contact with the electrically conductive diamond layer, and a gate contact is on the electrically insulating diamond layer. The diamond layers may be homoepitaxial, polycrystalline, nanocrystalline or ultrananocrystalline in various combinations.A method of making a substantially all diamond self-aligned gate transistor is disclosed in which seeding and patterning can be avoided or minimized, if desired.

Model-based tomographic reconstruction

DOEpatents

Chambers, David H; Lehman, Sean K; Goodman, Dennis M

2012-06-26

A model-based approach to estimating wall positions for a building is developed and tested using simulated data. It borrows two techniques from geophysical inversion problems, layer stripping and stacking, and combines them with a model-based estimation algorithm that minimizes the mean-square error between the predicted signal and the data. The technique is designed to process multiple looks from an ultra wideband radar array. The processed signal is time-gated and each section processed to detect the presence of a wall and estimate its position, thickness, and material parameters. The floor plan of a building is determined by moving the array around the outside of the building. In this paper we describe how the stacking and layer stripping algorithms are combined and show the results from a simple numerical example of three parallel walls.

Side chain flexibility and the pore dimensions in the GABAA receptor

NASA Astrophysics Data System (ADS)

Rossokhin, Alexey V.; Zhorov, Boris S.

2016-07-01

Permeation of ions through open channels and their accessibility to pore-targeting drugs depend on the pore cross-sectional dimensions, which are known only for static X-ray and cryo-EM structures. Here, we have built homology models of the closed, open and desensitized α1β2γ2 GABAA receptor (GABAAR). The models are based, respectively, on the X-ray structure of α3 glycine receptor (α3 GlyR), cryo-EM structure of α1 GlyR and X-ray structure of β3 GABAAR. We employed Monte Carlo energy minimizations to explore how the pore lumen may increase due to repulsions of flexible side chains from a variable-diameter electroneutral atom (an expanding sphere) pulled through the pore. The expanding sphere computations predicted that the pore diameter averaged along the permeation pathway is larger by approximately 3 Å than that computed for the models with fixed sidechains. Our models predict three major pore constrictions located at the levels of -2', 9' and 20' residues. Residues around the -2' and 9' rings are known to form the desensitization and activation gates of GABAAR. Our computations predict that the 20' ring may also serve as GABAAR gate whose physiological role is unclear. The side chain flexibility of residues -2', 9' and 20' and hence the dimensions of the constrictions depend on the GABAAR functional state.

NOTE: A feasibility study of markerless fluoroscopic gating for lung cancer radiotherapy using 4DCT templates

NASA Astrophysics Data System (ADS)

Li, Ruijiang; Lewis, John H.; Cerviño, Laura I.; Jiang, Steve B.

2009-10-01

A major difficulty in conformal lung cancer radiotherapy is respiratory organ motion, which may cause clinically significant targeting errors. Respiratory-gated radiotherapy allows for more precise delivery of prescribed radiation dose to the tumor, while minimizing normal tissue complications. Gating based on external surrogates is limited by its lack of accuracy, while gating based on implanted fiducial markers is limited primarily by the risk of pneumothorax due to marker implantation. Techniques for fluoroscopic gating without implanted fiducial markers (markerless gating) have been developed. These techniques usually require a training fluoroscopic image dataset with marked tumor positions in the images, which limits their clinical implementation. To remove this requirement, this study presents a markerless fluoroscopic gating algorithm based on 4DCT templates. To generate gating signals, we explored the application of three similarity measures or scores between fluoroscopic images and the reference 4DCT template: un-normalized cross-correlation (CC), normalized cross-correlation (NCC) and normalized mutual information (NMI), as well as average intensity (AI) of the region of interest (ROI) in the fluoroscopic images. Performance was evaluated using fluoroscopic and 4DCT data from three lung cancer patients. On average, gating based on CC achieves the highest treatment accuracy given the same efficiency, with a high target coverage (average between 91.9% and 98.6%) for a wide range of nominal duty cycles (20-50%). AI works well for two patients out of three, but failed for the third patient due to interference from the heart. Gating based on NCC and NMI usually failed below 50% nominal duty cycle. Based on this preliminary study with three patients, we found that the proposed CC-based gating algorithm can generate accurate and robust gating signals when using 4DCT reference template. However, this observation is based on results obtained from a very limited dataset, and further investigation on a larger patient population has to be done before its clinical implementation.

Water gate array for current flow or tidal movement pneumatic harnessing system

DOEpatents

Gorlov, Alexander M.

1991-01-01

The invention, which provides a system for harnessing power from current flow or tidal movement in a body of water, comprises first and second hydro-pneumatic chambers each having ingress and egress below the water surface near the river or ocean floor and water gates operative to open or seal the ports to the passage of water. In an exemplary embodiment, the gates are sychronized by shafts so that the ingress ports of each chamber are connected to the egress ports of each other chamber. Thus, one set of gates is closed, while the other is open, thereby allowing water to flow into one chamber and build air pressure therein and allowing water to flow out of the other chamber and create a partial vacuum therein. A pipe connects the chambers, and an air turbine harnesses the air movement within the pipe. When water levels are equilibrated, the open set of gates is closed by a counterweight, and the other set is allowed to open by natural force of the water differential. The water gates may be comprised of a plurality of louvers which are ganged for simultaneous opening and closing. The system is designed to operate with air turbines or other pneumatic devices. Its design minimizes construction cost and environmental impact, yet provides a clean renewable energy source.

Diel activity patterns of juvenile late fall-run Chinook salmon with implications for operation of a gated water diversion in the Sacramento–San Joaquin River Delta

USGS Publications Warehouse

Plumb, John M.; Adams, Noah S.; Perry, Russell W.; Holbrook, Christopher; Romine, Jason G.; Blake, Aaron R.; Burau, Jon R.

2016-01-01

In the Sacramento-San Joaquin River Delta, California, tidal forces that reverse river flows increase the proportion of water and juvenile late fall-run Chinook salmon diverted into a network of channels that were constructed to support agriculture and human consumption. This area is known as the interior delta, and it has been associated with poor fish survival. Under the rationale that the fish will be diverted in proportion to the amount of water that is diverted, the Delta Cross Channel (DCC) has been prescriptively closed during the winter out-migration to reduce fish entrainment and mortality into the interior delta. The fish are thought to migrate mostly at night, and so daytime operation of the DCC may allow for water diversion that minimizes fish entrainment and mortality. To assess this, the DCC gate was experimentally opened and closed while we released 2983 of the fish with acoustic transmitters upstream of the DCC to monitor their arrival and entrainment into the DCC. We used logistic regression to model night-time arrival and entrainment probabilities with covariates that included the proportion of each diel period with upstream flow, flow, rate of change in flow and water temperature. The proportion of time with upstream flow was the most important driver of night-time arrival probability, yet river flow had the largest effect on fish entrainment into the DCC. Modelling results suggest opening the DCC during daytime while keeping the DCC closed during night-time may allow for water diversion that minimizes fish entrainment into the interior delta.

Nanofabrication of 10-nm T-shaped gates using a double patterning process with electron beam lithography and dry etch

NASA Astrophysics Data System (ADS)

Shao, Jinhai; Deng, Jianan; Lu, W.; Chen, Yifang

2017-07-01

A process to fabricate T-shaped gates with the footprint scaling down to 10 nm using a double patterning procedure is reported. One of the keys in this process is to separate the definition of the footprint from that for the gate-head so that the proximity effect originated from electron forward scattering in the resist is significantly minimized, enabling us to achieve as narrow as 10-nm foot width. Furthermore, in contrast to the reported technique for 10-nm T-shaped profile in resist, this process utilizes a metallic film with a nanoslit as an etch mask to form a well-defined 10-nm-wide foot in a SiNx layer by reactive ion etch. Such a double patterning process has demonstrated enhanced reliability. The detailed process is comprehensively described, and its advantages and limitations are discussed. Nanofabrication of InP-based high-electron-mobility transistors using the developed process for 10- to 20-nm T-shaped gates is currently under the way.

A high-mobility electronic system at an electrolyte-gated oxide surface

DOE PAGES

Gallagher, Patrick; Lee, Menyoung; Petach, Trevor A.; ...

2015-03-12

Electrolyte gating is a powerful technique for accumulating large carrier densities at a surface. Yet this approach suffers from significant sources of disorder: electrochemical reactions can damage or alter the sample, and the ions of the electrolyte and various dissolved contaminants sit Angstroms from the electron system. Accordingly, electrolyte gating is well suited to studies of superconductivity and other phenomena robust to disorder, but of limited use when reactions or disorder must be avoided. Here we demonstrate that these limitations can be overcome by protecting the sample with a chemically inert, atomically smooth sheet of hexagonal boron nitride. We illustratemore » our technique with electrolyte-gated strontium titanate, whose mobility when protected with boron nitride improves more than 10-fold while achieving carrier densities nearing 10 14 cm –2. In conclusion, our technique is portable to other materials, and should enable future studies where high carrier density modulation is required but electrochemical reactions and surface disorder must be minimized.« less

Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal-Insulator-Semiconductor Field-Effect Transistor.

PubMed

Kim, Janghyuk; Mastro, Michael A; Tadjer, Marko J; Kim, Jihyun

2017-06-28

β-gallium oxide (β-Ga 2 O 3 ) and hexagonal boron nitride (h-BN) heterostructure-based quasi-two-dimensional metal-insulator-semiconductor field-effect transistors (MISFETs) were demonstrated by integrating mechanical exfoliation of (quasi)-two-dimensional materials with a dry transfer process, wherein nanothin flakes of β-Ga 2 O 3 and h-BN were utilized as the channel and gate dielectric, respectively, of the MISFET. The h-BN dielectric, which has an extraordinarily flat and clean surface, provides a minimal density of charged impurities on the interface between β-Ga 2 O 3 and h-BN, resulting in superior device performances (maximum transconductance, on/off ratio, subthreshold swing, and threshold voltage) compared to those of the conventional back-gated configurations. Also, double-gating of the fabricated device was demonstrated by biasing both top and bottom gates, achieving the modulation of the threshold voltage. This heterostructured wide-band-gap nanodevice shows a new route toward stable and high-power nanoelectronic devices.

High-frequency self-aligned graphene transistors with transferred gate stacks

PubMed Central

Cheng, Rui; Bai, Jingwei; Liao, Lei; Zhou, Hailong; Chen, Yu; Liu, Lixin; Lin, Yung-Chen; Jiang, Shan; Huang, Yu; Duan, Xiangfeng

2012-01-01

Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on a sacrificial substrate, and then transferred onto arbitrary substrates with graphene on top. A self-aligned process, enabled by the unique structure of the transferred gate stacks, is then used to position precisely the source and drain electrodes with minimized access resistance or parasitic capacitance. This process has therefore enabled scalable fabrication of self-aligned graphene transistors with unprecedented performance including a record-high cutoff frequency up to 427 GHz. Our study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra–high-frequency circuits. PMID:22753503

Towards Self-Clocked Gated OCDMA Receiver

NASA Astrophysics Data System (ADS)

Idris, S.; Osadola, T.; Glesk, I.

2013-02-01

A novel incoherent OCDMA receiver with incorporated all-optical clock recovery for self-synchronization of a time gate for the multi access interferences (MAI) suppression and minimizing the effect of data time jitter in incoherent OCDMA system was successfully developed and demonstrated. The solution was implemented and tested in a multiuser environment in an out of the laboratory OCDMA testbed with two-dimensional wavelength-hopping time-spreading coding scheme and OC-48 (2.5 Gbp/s) data rate. The self-clocked all-optical time gate uses SOA-based fibre ring laser optical clock, recovered all-optically from the received OCDMA traffic to control its switching window for cleaning the autocorrelation peak from the surrounding MAI. A wider eye opening was achieved when the all-optically recovered clock from received data was used for synchronization if compared to a static approach with the RF clock being generated by a RF synthesizer. Clean eye diagram was also achieved when recovered clock is used to drive time gating.

Quantum gates by inverse engineering of a Hamiltonian

NASA Astrophysics Data System (ADS)

Santos, Alan C.

2018-01-01

Inverse engineering of a Hamiltonian (IEH) from an evolution operator is a useful technique for the protocol of quantum control with potential applications in quantum information processing. In this paper we introduce a particular protocol to perform IEH and we show how this scheme can be used to implement a set of quantum gates by using minimal quantum resources (such as entanglement, interactions between more than two qubits or auxiliary qubits). Remarkably, while previous protocols request three-qubit interactions and/or auxiliary qubits to implement such gates, our protocol requires just two-qubit interactions and no auxiliary qubits. By using this approach we can obtain a large class of Hamiltonians that allow us to implement single and two-qubit gates necessary for quantum computation. To conclude this article we analyze the performance of our scheme against systematic errors related to amplitude noise, where we show that the free parameters introduced in our scheme can be useful for enhancing the robustness of the protocol against such errors.

Geometric dependence of the parasitic components and thermal properties of HEMTs

NASA Astrophysics Data System (ADS)

Vun, Peter V.; Parker, Anthony E.; Mahon, Simon J.; Fattorini, Anthony

2007-12-01

For integrated circuit design up to 50GHz and beyond accurate models of the transistor access structures and intrinsic structures are necessary for prediction of circuit performance. The circuit design process relies on optimising transistor geometry parameters such as unit gate width, number of gates, number of vias and gate-to-gate spacing. So the relationship between electrical and thermal parasitic components in transistor access structures, and transistor geometry is important to understand when developing models for transistors of differing geometries. Current approaches to describing the geometric dependence of models are limited to empirical methods which only describe a finite set of geometries and only include unit gate width and number of gates as variables. A better understanding of the geometric dependence is seen as a way to provide scalable models that remain accurate for continuous variation of all geometric parameters. Understanding the distribution of parasitic elements between the manifold, the terminal fingers, and the reference plane discontinuities is an issue identified as important in this regard. Examination of dc characteristics and thermal images indicates that gate-to-gate thermal coupling and increased thermal conductance at the gate ends, affects the device total thermal conductance. Consequently, a distributed thermal model is proposed which accounts for these effects. This work is seen as a starting point for developing comprehensive scalable models that will allow RF circuit designers to optimise circuit performance parameters such as total die area, maximum output power, power-added-efficiency (PAE) and channel temperature/lifetime.

Learning to use working memory: a reinforcement learning gating model of rule acquisition in rats

PubMed Central

Lloyd, Kevin; Becker, Nadine; Jones, Matthew W.; Bogacz, Rafal

2012-01-01

Learning to form appropriate, task-relevant working memory representations is a complex process central to cognition. Gating models frame working memory as a collection of past observations and use reinforcement learning (RL) to solve the problem of when to update these observations. Investigation of how gating models relate to brain and behavior remains, however, at an early stage. The current study sought to explore the ability of simple RL gating models to replicate rule learning behavior in rats. Rats were trained in a maze-based spatial learning task that required animals to make trial-by-trial choices contingent upon their previous experience. Using an abstract version of this task, we tested the ability of two gating algorithms, one based on the Actor-Critic and the other on the State-Action-Reward-State-Action (SARSA) algorithm, to generate behavior consistent with the rats'. Both models produced rule-acquisition behavior consistent with the experimental data, though only the SARSA gating model mirrored faster learning following rule reversal. We also found that both gating models learned multiple strategies in solving the initial task, a property which highlights the multi-agent nature of such models and which is of importance in considering the neural basis of individual differences in behavior. PMID:23115551

Gate-violation behavior at highway-rail grade crossings and the consequences: Using geo-Spatial modeling integrated with path analysis.

PubMed

Liu, Jun; Khattak, Asad J

2017-12-01

Drivers undertaking risky behaviors at highway-rail grade crossings are often severely injured in collisions with trains. Among these behaviors, gate-violation (referring to driving around or through the gates that were activated and lowered by an approaching train) seems to be one of the most dangerous actions a driver might take at a gated crossing; it may compromise the intended safety improvement made by adding gates at crossings. This study develops a nuanced conceptual framework that uses path analysis to explore the contributing factors to gate-violation behaviors and the correlation between gate-violation behaviors and the crash consequence - the driver injury severity. Further, using geo-spatial modeling techniques, this study explores whether the correlates of gate-violation behaviors and their associations with injury severity are stationary across diverse geographic contexts of the United States. Geo-spatial modeling shows that the correlates of gate-violation and its associations with injury severity vary substantially across the United States. Spatial variations in correlates of gate-violation and injury severity are mapped by estimating geographically weighted regressions; the maps can serve as an instrument for screening safety improvements and help identify regions that need safety improvements. For example, the results show that two-quadrant gates are more likely to have gate-violation crashes than four-quadrant gates in Iowa, Illinois, Wisconsin and Minnesota. These states may need to receive more attentions on the enforcement of inhibiting gate-violation at crossings with two-quadrant gates or have the priority over other states to upgrade these crossings to four-quadrant gates if financially feasible. Copyright © 2017. Published by Elsevier Ltd.

T-gate geometric (solution for submicrometer gate length) HEMT: Physical analysis, modeling and implementation as parasitic elements and its usage as dual gate for variable gain amplifiers

NASA Astrophysics Data System (ADS)

Gupta, Ritesh; Rathi, Servin; Kaur, Ravneet; Gupta, Mridula; Gupta, R. S.

2009-03-01

In order to achieve superior RF performance, short gate length is required for the compound semiconductor field effect transistors, but the limitation in lithography for submicrometer gate lengths leads to the formation of various metal-insulator geometries like T-gate [Sandeep R. Bahl, Jesus A. del Alamo, Physics of breakdown in InAlAs/ n +-InGaAs heterostructure field-effect transistors, IEEE Trans. Electron Devices 41 (12) (1994) 2268-2275]. These geometries are the combination of various Metal-Semiconductor (MS)/Metal-Air-Semiconductor (MAS) contacts. Moreover, field plates [S. Karmalkar, M.S. Shur, G. Simin, M. Asif Khan, Field-plate engineering for HFETs, IEEE Trans. Electron Devices 52 (2005) 2534-2540] are also being fabricated these days, mainly at the drain end ( Γ-gate) having Metal-Insulator-Semiconductor (MIS) instead of MAS contact with the intention of increasing the breakdown voltage of the device. To realize the effect of upper gate electrode in the T-gate structure and field plates, an analytical model has been proposed in the present article by dividing the whole structure into MS/MIS contact regions, applying current continuity among them and solving iteratively. The model proposed for Metal-Insulator Semiconductor High Electron Mobility Transistor (MISHEMT) [R. Gupta, S.K. Aggarwal, M. Gupta, R.S. Gupta, Analytical model for metal insulator semiconductor high electron mobility transistor (MISHEMT) for its high frequency and high power applications, J. Semicond. Technol. Sci. 6 (3) (2006) 189-198], is equally applicable to High Electron Mobility Transistors (HEMT) and has been used to formulate this model. In this paper, various structures and geometries have been compared to anticipate the need of T-gate modeling. The effect of MIS contacts has been implemented as parasitic resistance and capacitance and has also been studied to control the middle conventional gate as in dual gate technology by applying separate voltages across it. The results obtained using the proposed analytical scheme has been compared with simulated and experimental results, to prove the validity of our model.

Braiding by Majorana tracking and long-range CNOT gates with color codes

NASA Astrophysics Data System (ADS)

Litinski, Daniel; von Oppen, Felix

2017-11-01

Color-code quantum computation seamlessly combines Majorana-based hardware with topological error correction. Specifically, as Clifford gates are transversal in two-dimensional color codes, they enable the use of the Majoranas' non-Abelian statistics for gate operations at the code level. Here, we discuss the implementation of color codes in arrays of Majorana nanowires that avoid branched networks such as T junctions, thereby simplifying their realization. We show that, in such implementations, non-Abelian statistics can be exploited without ever performing physical braiding operations. Physical braiding operations are replaced by Majorana tracking, an entirely software-based protocol which appropriately updates the Majoranas involved in the color-code stabilizer measurements. This approach minimizes the required hardware operations for single-qubit Clifford gates. For Clifford completeness, we combine color codes with surface codes, and use color-to-surface-code lattice surgery for long-range multitarget CNOT gates which have a time overhead that grows only logarithmically with the physical distance separating control and target qubits. With the addition of magic state distillation, our architecture describes a fault-tolerant universal quantum computer in systems such as networks of tetrons, hexons, or Majorana box qubits, but can also be applied to nontopological qubit platforms.

Evaluation of the irising effect of a slow-gating intensified charge-coupled device on laser-induced incandescence measurements of soot

NASA Astrophysics Data System (ADS)

Shaddix, Christopher R.; Williams, Timothy C.

2009-03-01

Intensified charge-coupled devices (ICCDs) are used extensively in many scientific and engineering environments to image weak or temporally short optical events. To optimize the quantum efficiency of light collection, many of these devices are chosen to have characteristic intensifier gate times that are relatively slow, on the order of tens of nanoseconds. For many measurements associated with nanosecond laser sources, such as scattering-based diagnostics and most laser-induced fluorescence applications, the signals rise and decay sufficiently fast during and after the laser pulse that the intensifier gate may be set to close after the cessation of the signal and still effectively reject interferences associated with longer time scales. However, the relatively long time scale and complex temporal response of laser-induced incandescence (LII) of nanometer-sized particles (such as soot) offer a difficult challenge to the use of slow-gating ICCDs for quantitative measurements. In this paper, ultraviolet Rayleigh scattering imaging is used to quantify the irising effect of a slow-gating scientific ICCD camera, and an analysis is conducted of LII image data collected with this camera as a function of intensifier gate width. The results demonstrate that relatively prompt LII detection, generally desirable to minimize the influences of particle size and local gas pressure and temperature on measurements of the soot volume fraction, is strongly influenced by the irising effect of slow-gating ICCDs.

The Poincaré Half-Plane for Informationally-Complete POVMs

NASA Astrophysics Data System (ADS)

Planat, Michel

2017-12-01

It has been shown that classes of (minimal asymmetric) informationally complete POVMs in dimension d can be built using the multiparticle Pauli group acting on appropriate fiducial states [M. Planat and Z. Gedik, R. Soc. open sci. 4, 170387 (2017)]. The latter states may also be derived starting from the Poincar\\'e upper half-plane model H. For doing this, one translates the congruence (or non-congruence) subgroups of index d of the modular group into groups of permutation gates whose some of the eigenstates are the seeked fiducials. The structure of some IC-POVMs is found to be intimately related to the Kochen-Specker theorem.

A highly manufacturable 0.2 {mu}m AlGaAs/InGaAs PHEMT fabricated using the single-layer integrated-metal FET (SLIMFET) process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Havasy, C.K.; Quach, T.K.; Bozada, C.A.

1995-12-31

This work is the development of a single-layer integrated-metal field effect transistor (SLIMFET) process for a high performance 0.2 {mu}m AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT). This process is compatible with MMIC fabrication and minimizes process variations, cycle time, and cost. This process uses non-alloyed ohmic contacts, a selective gate-recess etching process, and a single gate/source/drain metal deposition step to form both Schottky and ohmic contacts at the same time.

Modeling of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat Duen

2005-01-01

Considerable research has been performed by several organizations in the use of the Metal- Ferroelectric-Semiconductor Field-Effect Transistors (MFSFET) in memory circuits. However, research has been limited in expanding the use of the MFSFET to other electronic circuits. This research project investigates the modeling of a NAND gate constructed from MFSFETs. The NAND gate is one of the fundamental building blocks of digital electronic circuits. The first step in forming a NAND gate is to develop an inverter circuit. The inverter circuit was modeled similar to a standard CMOS inverter. A n-channel MFSFET with positive polarization was used for the n-channel transistor, and a n-channel MFSFET with negative polarization was used for the p-channel transistor. The MFSFETs were simulated by using a previously developed current model which utilized a partitioned ferroelectric layer. The inverter voltage transfer curve was obtained over a standard input of zero to five volts. Then a 2-input NAND gate was modeled similar to the inverter circuit. Voltage transfer curves were obtained for the NAND gate for various configurations of input voltages. The resultant data shows that it is feasible to construct a NAND gate with MFSFET transistors.

Single-channel kinetics of BK (Slo1) channels

PubMed Central

Geng, Yanyan; Magleby, Karl L.

2014-01-01

Single-channel kinetics has proven a powerful tool to reveal information about the gating mechanisms that control the opening and closing of ion channels. This introductory review focuses on the gating of large conductance Ca2+- and voltage-activated K+ (BK or Slo1) channels at the single-channel level. It starts with single-channel current records and progresses to presentation and analysis of single-channel data and the development of gating mechanisms in terms of discrete state Markov (DSM) models. The DSM models are formulated in terms of the tetrameric modular structure of BK channels, consisting of a central transmembrane pore-gate domain (PGD) attached to four surrounding transmembrane voltage sensing domains (VSD) and a large intracellular cytosolic domain (CTD), also referred to as the gating ring. The modular structure and data analysis shows that the Ca2+ and voltage dependent gating considered separately can each be approximated by 10-state two-tiered models with five closed states on the upper tier and five open states on the lower tier. The modular structure and joint Ca2+ and voltage dependent gating are consistent with a 50 state two-tiered model with 25 closed states on the upper tier and 25 open states on the lower tier. Adding an additional tier of brief closed (flicker states) to the 10-state or 50-state models improved the description of the gating. For fixed experimental conditions a channel would gate in only a subset of the potential number of states. The detected number of states and the correlations between adjacent interval durations are consistent with the tiered models. The examined models can account for the single-channel kinetics and the bursting behavior of gating. Ca2+ and voltage activate BK channels by predominantly increasing the effective opening rate of the channel with a smaller decrease in the effective closing rate. Ca2+ and depolarization thus activate by mainly destabilizing the closed states. PMID:25653620

Voltage gating by molecular subunits of Na+ and K+ ion channels: higher-dimensional cubic kinetics, rate constants, and temperature

PubMed Central

2015-01-01

The structural similarity between the primary molecules of voltage-gated Na and K channels (alpha subunits) and activation gating in the Hodgkin-Huxley model is brought into full agreement by increasing the model's sodium kinetics to fourth order (m3 → m4). Both structures then virtually imply activation gating by four independent subprocesses acting in parallel. The kinetics coalesce in four-dimensional (4D) cubic diagrams (16 states, 32 reversible transitions) that show the structure to be highly failure resistant against significant partial loss of gating function. Rate constants, as fitted in phase plot data of retinal ganglion cell excitation, reflect the molecular nature of the gating transitions. Additional dimensions (6D cubic diagrams) accommodate kinetically coupled sodium inactivation and gating processes associated with beta subunits. The gating transitions of coupled sodium inactivation appear to be thermodynamically irreversible; response to dielectric surface charges (capacitive displacement) provides a potential energy source for those transitions and yields highly energy-efficient excitation. A comparison of temperature responses of the squid giant axon (apparently Arrhenius) and mammalian channel gating yields kinetic Q10 = 2.2 for alpha unit gating, whose transitions are rate-limiting at mammalian temperatures; beta unit kinetic Q10 = 14 reproduces the observed non-Arrhenius deviation of mammalian gating at low temperatures; the Q10 of sodium inactivation gating matches the rate-limiting component of activation gating at all temperatures. The model kinetics reproduce the physiologically large frequency range for repetitive firing in ganglion cells and the physiologically observed strong temperature dependence of recovery from inactivation. PMID:25867741

Field test of an alternative longwall gate road design

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cox, R.M.; Vandergrift, T.L.; McDonnell, J.P.

1994-01-01

The US Bureau of Mines (USBM) MULSIM/ML modeling technique has been used to analyze anticipated stress distributions for a proposed alternative longwall gate road design for a western Colorado coal mine. The model analyses indicated that the alternative gate road design would reduce stresses in the headgate entry. To test the validity of the alternative gate road design under actual mining conditions, a test section of the alternative system was incorporated into a subsequent set of gate roads developed at the mine. The alternative gate road test section was instrumented with borehole pressure cells, as part of an ongoing USBMmore » research project to monitor ground pressure changes as longwall mining progressed. During the excavation of the adjacent longwall panels, the behavior of the alternative gate road system was monitored continuously using the USBM computer-assisted Ground Control Management System. During these field tests, the alternative gate road system was first monitored and evaluated as a headgate, and later monitored and evaluated as a tailgate. The results of the field tests confirmed the validity of using the MULSIM/NL modeling technique to evaluate mine designs.« less

Energy Saving Melting and Revert Reduction Technology (Energy-SMARRT): Clean Steel Casting Production

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuyucak, Selcuk; Li, Delin

2013-12-31

Inclusions in steel castings can cause rework, scrap, poor machining, and reduced casting performance, which can obviously result in excess energy consumption. Significant progress in understanding inclusion source, formation and control has been made. Inclusions can be defined as non-metallic materials such as refractory, sand, slag, or coatings, embedded in a metallic matrix. This research project has focused on the mold filling aspects to examine the effects of pouring methods and gating designs on the steel casting cleanliness through water modeling, computer modeling, and melting/casting experiments. Early in the research project, comprehensive studies of bottom-pouring water modeling and low-alloy steelmore » casting experiments were completed. The extent of air entrainment in bottom-poured large castings was demonstrated by water modeling. Current gating systems are designed to prevent air aspiration. However, air entrainment is equally harmful and no prevention measures are in current practice. In this study, new basin designs included a basin dam, submerged nozzle, and nozzle extension. The entrained air and inclusions from the gating system were significantly reduced using the new basin method. Near the end of the project, there has been close collaboration with Wescast Industries Inc., a company manufacturing automotive exhaust components. Both computer modeling using Magma software and melting/casting experiments on thin wall turbo-housing stainless steel castings were completed in this short period of time. Six gating designs were created, including the current gating on the pattern, non-pressurized, partially pressurized, naturally pressurized, naturally pressurized without filter, and radial choke gating without filter, for Magma modeling. The melt filling velocity and temperature were determined from the modeling. Based on the simulation results, three gating designs were chosen for further melting and casting experiments on the same casting pattern using the lip pouring method. It was observed again that gating designs greatly influenced the melt filling velocity and the number of inclusion defects. The radial choked gating showed improvements in casting cleanliness and yield over the other gatings, even though no mold filters were used in the gating system.« less

An extensive investigation of work function modulated trapezoidal recessed channel MOSFET

NASA Astrophysics Data System (ADS)

Lenka, Annada Shankar; Mishra, Sikha; Mishra, Satyaranjan; Bhanja, Urmila; Mishra, Guru Prasad

2017-11-01

The concept of silicon on insulator (SOI) and grooved gate help to lessen the short channel effects (SCEs). Again the work function modulation along the metal gate gives a better drain current due to the uniform electric field along the channel. So all these concepts are combined and used in the proposed MOSFET structure for more improved performance. In this work, trapezoidal recessed channel silicon on insulator (TRC-SOI) MOSFET and work function modulated trapezoidal recessed channel silicon on insulator (WFM-TRC-SOI) MOSFET are compared with DC and RF parameters and later linearity of both the devices is tested. An analytical model is formulated by using a 2-D Poisson's equation and develops a compact equation for threshold voltage using minimum surface potential. In this work we analyze the effect of negative junction depth and the corner angle on various device parameters such as minimum surface potential, sub-threshold slope (SS), drain induced barrier lowering (DIBL) and threshold voltage. The analysis interprets that the switching performance of WFM-TRC-SOI MOSFET surpasses TRC-SOI MOSFET in terms of high Ion/Ioff ratio and also the proposed structure can minimize the short channel effects (SCEs) in RF application. The validity of proposed model has been verified with simulation result performed on Sentaurus TCAD device simulator.

Methods of in-vivo mouse lung micro-CT

NASA Astrophysics Data System (ADS)

Recheis, Wolfgang A.; Nixon, Earl; Thiesse, Jacqueline; McLennan, Geoffrey; Ross, Alan; Hoffman, Eric

2005-04-01

Micro-CT will have a profound influence on the accumulation of anatomical and physiological phenotypic changes in natural and transgenetic mouse models. Longitudinal studies will be greatly facilitated, allowing for a more complete and accurate description of events if in-vivo studies are accomplished. The purpose of the ongoing project is to establish a feasible and reproducible setup for in-vivo mouse lung micro-computed tomography (μCT). We seek to use in-vivo respiratory-gated μCT to follow mouse models of lung disease with subsequent recovery of the mouse. Methodologies for optimizing scanning parameters and gating for the in-vivo mouse lung are presented. A Scireq flexiVent ventilated the gas-anesthetized mice at 60 breaths/minute, 30 cm H20 PEEP, 30 ml/kg tidal volume and provided a respiratory signal to gate a Skyscan 1076 μCT. Physiologic monitoring allowed the control of vital functions and quality of anesthesia, e.g. via ECG monitoring. In contrary to longer exposure times with ex-vivo scans, scan times for in-vivo were reduced using 35μm pixel size, 158ms exposure time and 18μm pixel size, 316ms exposure time to reduce motion artifacts. Gating via spontaneous breathing was also tested. Optimal contrast resolution was achieved at 50kVp, 200μA, applying an aluminum filter (0.5mm). There were minimal non-cardiac related motion artifacts. Both 35μm and 1μm voxel size images were suitable for evaluation of the airway lumen and parenchymal density. Total scan times were 30 and 65 minutes respectively. The mice recovered following scanning protocols. In-vivo lung scanning with recovery of the mouse delivered reasonable image quality for longitudinal studies, e.g. mouse asthma models. After examining 10 mice, we conclude μCT is a feasible tool evaluating mouse models of lung pathology in longitudinal studies with increasing anatomic detail available for evaluation as one moves from in-vivo to ex-vivo studies. Further developments include automated bronchial tree segmentation and airway wall thickness measurement tools. Improvements in Hounsfield unit calibration have to be performed when the interest of the study lies in determining and quantifying parenchymal changes and rely on estimating partial volume contributions of underlying structures to voxel densities.

Internal dosimetry with the Monte Carlo code GATE: validation using the ICRP/ICRU female reference computational model

NASA Astrophysics Data System (ADS)

Villoing, Daphnée; Marcatili, Sara; Garcia, Marie-Paule; Bardiès, Manuel

2017-03-01

The purpose of this work was to validate GATE-based clinical scale absorbed dose calculations in nuclear medicine dosimetry. GATE (version 6.2) and MCNPX (version 2.7.a) were used to derive dosimetric parameters (absorbed fractions, specific absorbed fractions and S-values) for the reference female computational model proposed by the International Commission on Radiological Protection in ICRP report 110. Monoenergetic photons and electrons (from 50 keV to 2 MeV) and four isotopes currently used in nuclear medicine (fluorine-18, lutetium-177, iodine-131 and yttrium-90) were investigated. Absorbed fractions, specific absorbed fractions and S-values were generated with GATE and MCNPX for 12 regions of interest in the ICRP 110 female computational model, thereby leading to 144 source/target pair configurations. Relative differences between GATE and MCNPX obtained in specific configurations (self-irradiation or cross-irradiation) are presented. Relative differences in absorbed fractions, specific absorbed fractions or S-values are below 10%, and in most cases less than 5%. Dosimetric results generated with GATE for the 12 volumes of interest are available as supplemental data. GATE can be safely used for radiopharmaceutical dosimetry at the clinical scale. This makes GATE a viable option for Monte Carlo modelling of both imaging and absorbed dose in nuclear medicine.

ISITE: Automatic Circuit Synthesis for Double-Metal CMOS VLSI (Very Large Scale Integrated) Circuits

DTIC Science & Technology

1989-12-01

rows and columns should be minimized. There are two methodologies for achieving this objective, namely, logic minimization to I I I 15 I A B C D E T...type and N-type polysilicon (Figure 2.5( b )) and interconnecting the gates with metal at a later I processing step. The two layers of aluminum available...polysiliconI ...... .. ... .. .. . .. ... .. ... .. I N polysilicon Iii~~iiiiiiii~~iiiiii (a) ( b ) 3 Figure 2.5. Controlling the Threshold Voltage in

A one-dimensional diffusion analogy model for estimation of tide heights in selected tidal marshes in Connecticut

USGS Publications Warehouse

Bjerklie, David M.; O’Brien, Kevin; Rozsa, Ron

2013-01-01

A one-dimensional diffusion analogy model for estimating tide heights in coastal marshes was developed and calibrated by using data from previous tidal-marsh studies. The method is simpler to use than other one- and two-dimensional hydrodynamic models because it does not require marsh depth and tidal prism information; however, the one-dimensional diffusion analogy model cannot be used to estimate tide heights, flow velocities, and tide arrival times for tide conditions other than the highest tide for which it is calibrated. Limited validation of the method indicates that it has an accuracy within 0.3 feet. The method can be applied with limited calibration information that is based entirely on remote sensing or geographic information system data layers. The method can be used to estimate high-tide heights in tidal wetlands drained by tide gates where tide levels cannot be observed directly by opening the gates without risk of flooding properties and structures. A geographic information system application of the method is demonstrated for Sybil Creek marsh in Branford, Connecticut. The tidal flux into this marsh is controlled by two tide gates that prevent full tidal inundation of the marsh. The method application shows reasonable tide heights for the gates-closed condition (the normal condition) and the one-gate-open condition on the basis of comparison with observed heights. The condition with all tide gates open (two gates) was simulated with the model; results indicate where several structures would be flooded if the gates were removed as part of restoration efforts or if the tide gates were to fail.

Integrating Partial Polarization into a Metal-Ferroelectric-Semiconductor Field Effect Transistor Model

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Ho, Fat Duen

1999-01-01

The ferroelectric channel in a Metal-Ferroelectric-Semiconductor Field Effect Transistor (MFSFET) can partially change its polarization when the gate voltage near the polarization threshold voltage. This causes the MFSFET Drain current to change with repeated pulses of the same gate voltage near the polarization threshold voltage. A previously developed model [11, based on the Fermi-Dirac function, assumed that for a given gate voltage and channel polarization, a sin-le Drain current value would be generated. A study has been done to characterize the effects of partial polarization on the Drain current of a MFSFET. These effects have been described mathematically and these equations have been incorporated into a more comprehensive mathematical model of the MFSFET. The model takes into account the hysteresis nature of the MFSFET and the time dependent decay as well as the effects of partial polarization. This model defines the Drain current based on calculating the degree of polarization from previous gate pulses, the present Gate voltage, and the amount of time since the last Gate volta-e pulse.

The use of dwell time cross-correlation functions to study single-ion channel gating kinetics.

PubMed Central

Ball, F G; Kerry, C J; Ramsey, R L; Sansom, M S; Usherwood, P N

1988-01-01

The derivation of cross-correlation functions from single-channel dwell (open and closed) times is described. Simulation of single-channel data for simple gating models, alongside theoretical treatment, is used to demonstrate the relationship of cross-correlation functions to underlying gating mechanisms. It is shown that time irreversibility of gating kinetics may be revealed in cross-correlation functions. Application of cross-correlation function analysis to data derived from the locust muscle glutamate receptor-channel provides evidence for multiple gateway states and time reversibility of gating. A model for the gating of this channel is used to show the effect of omission of brief channel events on cross-correlation functions. PMID:2462924

Voltage gating by molecular subunits of Na+ and K+ ion channels: higher-dimensional cubic kinetics, rate constants, and temperature.

PubMed

Fohlmeister, Jürgen F

2015-06-01

The structural similarity between the primary molecules of voltage-gated Na and K channels (alpha subunits) and activation gating in the Hodgkin-Huxley model is brought into full agreement by increasing the model's sodium kinetics to fourth order (m(3) → m(4)). Both structures then virtually imply activation gating by four independent subprocesses acting in parallel. The kinetics coalesce in four-dimensional (4D) cubic diagrams (16 states, 32 reversible transitions) that show the structure to be highly failure resistant against significant partial loss of gating function. Rate constants, as fitted in phase plot data of retinal ganglion cell excitation, reflect the molecular nature of the gating transitions. Additional dimensions (6D cubic diagrams) accommodate kinetically coupled sodium inactivation and gating processes associated with beta subunits. The gating transitions of coupled sodium inactivation appear to be thermodynamically irreversible; response to dielectric surface charges (capacitive displacement) provides a potential energy source for those transitions and yields highly energy-efficient excitation. A comparison of temperature responses of the squid giant axon (apparently Arrhenius) and mammalian channel gating yields kinetic Q10 = 2.2 for alpha unit gating, whose transitions are rate-limiting at mammalian temperatures; beta unit kinetic Q10 = 14 reproduces the observed non-Arrhenius deviation of mammalian gating at low temperatures; the Q10 of sodium inactivation gating matches the rate-limiting component of activation gating at all temperatures. The model kinetics reproduce the physiologically large frequency range for repetitive firing in ganglion cells and the physiologically observed strong temperature dependence of recovery from inactivation. Copyright © 2015 the American Physiological Society.

Study of temperature effect on junctionless Si nanotube FET concerning analog/RF performance

NASA Astrophysics Data System (ADS)

Tayal, Shubham; Nandi, Ashutosh

2018-06-01

This paper for the first time investigates the effect of temperature variation on analog/RF performance of SiO2 as well as high-K gate dielectric based junctionless silicon nanotube FET (JL-SiNTFET). It is observed that the change in temperature does not variate the analog/RF performance of junctionless silicon nanotube FET by substantial amount. By increasing the temperature from 77 K to 400 K, the deterioration in intrinsic dc gain (AV) is marginal that is only ∼3 dB. Furthermore, the variation in cut-off frequency (fT), maximum oscillation frequency (fMAX), and gain-frequency product (GFP) with temperature is also minimal in JLSiNT-FET. More so, the same trend is observed even at scaled gate length (Lg = 15 nm). Furthermore, we have observed that the use of high-K gate dielectric deteriorates the analog/RF performance of JLSiNT-FET. However, the use of high-K gate dielectric negligibly changes the effect of temperature variation on analog/RF performance of JLSINT-FET device.

A simple laser locking system based on a field-programmable gate array.

PubMed

Jørgensen, N B; Birkmose, D; Trelborg, K; Wacker, L; Winter, N; Hilliard, A J; Bason, M G; Arlt, J J

2016-07-01

Frequency stabilization of laser light is crucial in both scientific and industrial applications. Technological developments now allow analog laser stabilization systems to be replaced with digital electronics such as field-programmable gate arrays, which have recently been utilized to develop such locking systems. We have developed a frequency stabilization system based on a field-programmable gate array, with emphasis on hardware simplicity, which offers a user-friendly alternative to commercial and previous home-built solutions. Frequency modulation, lock-in detection, and a proportional-integral-derivative controller are programmed on the field-programmable gate array and only minimal additional components are required to frequency stabilize a laser. The locking system is administered from a host-computer which provides comprehensive, long-distance control through a versatile interface. Various measurements were performed to characterize the system. The linewidth of the locked laser was measured to be 0.7 ± 0.1 MHz with a settling time of 10 ms. The system can thus fully match laser systems currently in use for atom trapping and cooling applications.

A simple laser locking system based on a field-programmable gate array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jørgensen, N. B.; Birkmose, D.; Trelborg, K.

Frequency stabilization of laser light is crucial in both scientific and industrial applications. Technological developments now allow analog laser stabilization systems to be replaced with digital electronics such as field-programmable gate arrays, which have recently been utilized to develop such locking systems. We have developed a frequency stabilization system based on a field-programmable gate array, with emphasis on hardware simplicity, which offers a user-friendly alternative to commercial and previous home-built solutions. Frequency modulation, lock-in detection, and a proportional-integral-derivative controller are programmed on the field-programmable gate array and only minimal additional components are required to frequency stabilize a laser. The lockingmore » system is administered from a host-computer which provides comprehensive, long-distance control through a versatile interface. Various measurements were performed to characterize the system. The linewidth of the locked laser was measured to be 0.7 ± 0.1 MHz with a settling time of 10 ms. The system can thus fully match laser systems currently in use for atom trapping and cooling applications.« less

Ads' click-through rates predicting based on gated recurrent unit neural networks

NASA Astrophysics Data System (ADS)

Chen, Qiaohong; Guo, Zixuan; Dong, Wen; Jin, Lingzi

2018-05-01

In order to improve the effect of online advertising and to increase the revenue of advertising, the gated recurrent unit neural networks(GRU) model is used as the ads' click through rates(CTR) predicting. Combined with the characteristics of gated unit structure and the unique of time sequence in data, using BPTT algorithm to train the model. Furthermore, by optimizing the step length algorithm of the gated unit recurrent neural networks, making the model reach optimal point better and faster in less iterative rounds. The experiment results show that the model based on the gated recurrent unit neural networks and its optimization of step length algorithm has the better effect on the ads' CTR predicting, which helps advertisers, media and audience achieve a win-win and mutually beneficial situation in Three-Side Game.

Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe

NASA Astrophysics Data System (ADS)

Green, R. T.; Luxmoore, I. J.; Lee, K. B.; Houston, P. A.; Ranalli, F.; Wang, T.; Parbrook, P. J.; Uren, M. J.; Wallis, D. J.; Martin, T.

2010-07-01

Incorporating GaN capping layers in conjunction with recessing has been identified as a means to maximize the high frequency performance of AlGaN/GaN high electron mobility transistors (HEMTs). Doping the cap heavily n-type is required in order to ensure minimal loss of carriers from the channel. Using a SiCl4/SF6 dry etch plasma recipe, 250 nm gate length HEMTs with recess lengths varying from 300 nm to 5 μm are fabricated. Heavily doped n+GaN caps enabled contact resistances of 0.3 Ω mm to be achieved. Recessing using a SiCl4/SF6 recipe does not introduce significant numbers of bulk traps. Gate recessing in conjunction with Si3N4 passivation reduces rf dispersion to negligible levels.

A study of quantum mechanical probabilities in the classical Hodgkin-Huxley model.

PubMed

Moradi, N; Scholkmann, F; Salari, V

2015-03-01

The Hodgkin-Huxley (HH) model is a powerful model to explain different aspects of spike generation in excitable cells. However, the HH model was proposed in 1952 when the real structure of the ion channel was unknown. It is now common knowledge that in many ion-channel proteins the flow of ions through the pore is governed by a gate, comprising a so-called "selectivity filter" inside the ion channel, which can be controlled by electrical interactions. The selectivity filter (SF) is believed to be responsible for the selection and fast conduction of particular ions across the membrane of an excitable cell. Other (generally larger) parts of the molecule such as the pore-domain gate control the access of ions to the channel protein. In fact, two types of gates are considered here for ion channels: the "external gate", which is the voltage sensitive gate, and the "internal gate" which is the selectivity filter gate (SFG). Some quantum effects are expected in the SFG due to its small dimensions, which may play an important role in the operation of an ion channel. Here, we examine parameters in a generalized model of HH to see whether any parameter affects the spike generation. Our results indicate that the previously suggested semi-quantum-classical equation proposed by Bernroider and Summhammer (BS) agrees strongly with the HH equation under different conditions and may even provide a better explanation in some cases. We conclude that the BS model can refine the classical HH model substantially.

Minimal-memory realization of pearl-necklace encoders of general quantum convolutional codes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Houshmand, Monireh; Hosseini-Khayat, Saied

2011-02-15

Quantum convolutional codes, like their classical counterparts, promise to offer higher error correction performance than block codes of equivalent encoding complexity, and are expected to find important applications in reliable quantum communication where a continuous stream of qubits is transmitted. Grassl and Roetteler devised an algorithm to encode a quantum convolutional code with a ''pearl-necklace'' encoder. Despite their algorithm's theoretical significance as a neat way of representing quantum convolutional codes, it is not well suited to practical realization. In fact, there is no straightforward way to implement any given pearl-necklace structure. This paper closes the gap between theoretical representation andmore » practical implementation. In our previous work, we presented an efficient algorithm to find a minimal-memory realization of a pearl-necklace encoder for Calderbank-Shor-Steane (CSS) convolutional codes. This work is an extension of our previous work and presents an algorithm for turning a pearl-necklace encoder for a general (non-CSS) quantum convolutional code into a realizable quantum convolutional encoder. We show that a minimal-memory realization depends on the commutativity relations between the gate strings in the pearl-necklace encoder. We find a realization by means of a weighted graph which details the noncommutative paths through the pearl necklace. The weight of the longest path in this graph is equal to the minimal amount of memory needed to implement the encoder. The algorithm has a polynomial-time complexity in the number of gate strings in the pearl-necklace encoder.« less

Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate Switching Time Analysis

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; Macleod, Todd C.; Ho, Fat D.

2006-01-01

Previous research investigated the modeling of a N Wga te constructed of Metal-Ferroelectric- Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. The NAND gate was modeled using n-channel MFSFETs with positive polarization for the standard CMOS n-channel transistors and n-channel MFSFETs with negative polarization for the standard CMOS p-channel transistors. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. During the low-to-high transition, the negatively polarized transistor pulls up the output voltage, and during the high-to-low transition, the positively polarized transistor pulls down the output voltage. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. Extension of this technique to more complicated logic gates using MFSFETs will be studied.

Range-Gated Metrology with Compact Optical Head

NASA Technical Reports Server (NTRS)

Dubovitsky, Serge; Shaddock, Daniel; Ware, Brent; Lay, Oliver

2008-01-01

This work represents a radical simplification in the design of the optical head needed for high-precision laser ranging applications. The optical head is now a single fiber-optic collimator with dimensions of order of 1 1 2 cm, which can be easily integrated into the system being measured with minimal footprint.

Tainter Gate Tests, Norfork Dam, North Fork River, Arkansas: Model and Prototype Investigations

DTIC Science & Technology

1954-06-01

the sides and top of the conduit while the bottom of the gate was sealed in a recess provided in the lead bottom seal. Later a rubber seal was also...the lifting strut were about the same whether or not flow was passing the gate. During the gate closure procedure, however, the data indiGate 24 that

How to Make a Synthetic Multicellular Computer

PubMed Central

Macia, Javier; Sole, Ricard

2014-01-01

Biological systems perform computations at multiple scales and they do so in a robust way. Engineering metaphors have often been used in order to provide a rationale for modeling cellular and molecular computing networks and as the basis for their synthetic design. However, a major constraint in this mapping between electronic and wet computational circuits is the wiring problem. Although wires are identical within electronic devices, they must be different when using synthetic biology designs. Moreover, in most cases the designed molecular systems cannot be reused for other functions. A new approximation allows us to simplify the problem by using synthetic cellular consortia where the output of the computation is distributed over multiple engineered cells. By evolving circuits in silico, we can obtain the minimal sets of Boolean units required to solve the given problem at the lowest cost using cellular consortia. Our analysis reveals that the basic set of logic units is typically non-standard. Among the most common units, the so called inverted IMPLIES (N-Implies) appears to be one of the most important elements along with the NOT and AND functions. Although NOR and NAND gates are widely used in electronics, evolved circuits based on combinations of these gates are rare, thus suggesting that the strategy of combining the same basic logic gates might be inappropriate in order to easily implement synthetic computational constructs. The implications for future synthetic designs, the general view of synthetic biology as a standard engineering domain, as well as potencial drawbacks are outlined. PMID:24586222

Modeling and Simulating Airport Surface Operations with Gate Conflicts

NASA Technical Reports Server (NTRS)

Zelinski, Shannon; Windhorst, Robert

2017-01-01

The Surface Operations Simulator and Scheduler (SOSS) is a fast-time simulation platform used to develop and test future surface scheduling concepts such as NASA's Air Traffic Demonstration 2 of time-based surface metering at Charlotte Douglass International Airport (CLT). Challenges associated with CLT surface operations have driven much of SOSS development. Recently, SOSS functionality for modeling harsdstand operations was developed to address gate conflicts, which occur when an arrival and departure wish to occupy the same gate at the same time. Because surface metering concepts such as ATD2 have the potential to increase gates conflicts as departures are held at their gates, it is important to study the interaction between surface metering and gate conflict management. Several approaches to managing gate conflicts with and without the use of hardstands were simulated and their effects on surface operations and scheduler performance compared.

Modeling and Simulating Airport Surface Operations with Gate Conflicts

NASA Technical Reports Server (NTRS)

Zelinski, Shannon; Windhorst, Robert

2017-01-01

The Surface Operations Simulator and Scheduler (SOSS) is a fast-time simulation platform used to develop and test future surface scheduling concepts such as NASAs Air Traffic Demonstration 2 of time-based surface metering at Charlotte Douglas International Airport (CLT). Challenges associated with CLT surface operations have driven much of SOSS development. Recently, SOSS functionality for modeling hardstand operations was developed to address gate conflicts, which occur when an arrival and departure wish to occupy the same gate at the same time. Because surface metering concepts such as ATD2 have the potential to increase gates conflicts as departure are held at their gates, it is important to study the interaction between surface metering and gate conflict management. Several approaches to managing gate conflicts with and without the use of hardstands were simulated and their effects on surface operations and scheduler performance compared.

Three-State Quantum Dot Gate FETs Using ZnS-ZnMgS Lattice-Matched Gate Insulator on Silicon

NASA Astrophysics Data System (ADS)

Karmakar, Supriya; Suarez, Ernesto; Jain, Faquir C.

2011-08-01

This paper presents the three-state behavior of quantum dot gate field-effect transistors (FETs). GeO x -cladded Ge quantum dots (QDs) are site-specifically self-assembled over lattice-matched ZnS-ZnMgS high- κ gate insulator layers grown by metalorganic chemical vapor deposition (MOCVD) on silicon substrates. A model of three-state behavior manifested in the transfer characteristics due to the quantum dot gate is also presented. The model is based on the transfer of carriers from the inversion channel to two layers of cladded GeO x -Ge quantum dots.

A computational study of liposome logic: towards cellular computing from the bottom up

PubMed Central

Smaldon, James; Romero-Campero, Francisco J.; Fernández Trillo, Francisco; Gheorghe, Marian; Alexander, Cameron

2010-01-01

In this paper we propose a new bottom-up approach to cellular computing, in which computational chemical processes are encapsulated within liposomes. This “liposome logic” approach (also called vesicle computing) makes use of supra-molecular chemistry constructs, e.g. protocells, chells, etc. as minimal cellular platforms to which logical functionality can be added. Modeling and simulations feature prominently in “top-down” synthetic biology, particularly in the specification, design and implementation of logic circuits through bacterial genome reengineering. The second contribution in this paper is the demonstration of a novel set of tools for the specification, modelling and analysis of “bottom-up” liposome logic. In particular, simulation and modelling techniques are used to analyse some example liposome logic designs, ranging from relatively simple NOT gates and NAND gates to SR-Latches, D Flip-Flops all the way to 3 bit ripple counters. The approach we propose consists of specifying, by means of P systems, gene regulatory network-like systems operating inside proto-membranes. This P systems specification can be automatically translated and executed through a multiscaled pipeline composed of dissipative particle dynamics (DPD) simulator and Gillespie’s stochastic simulation algorithm (SSA). Finally, model selection and analysis can be performed through a model checking phase. This is the first paper we are aware of that brings to bear formal specifications, DPD, SSA and model checking to the problem of modeling target computational functionality in protocells. Potential chemical routes for the laboratory implementation of these simulations are also discussed thus for the first time suggesting a potentially realistic physiochemical implementation for membrane computing from the bottom-up. PMID:21886681

Graphene as a platform for novel nanoelectronic devices

NASA Astrophysics Data System (ADS)

Standley, Brian

Graphene's superlative electrical and mechanical properties, combined with its compatibility with existing planar silicon-based technology, make it an attractive platform for novel nanoelectronic devices. The development of two such devices is reported--a nonvolatile memory element exploiting the nanoscale graphene edge and a field-effect transistor using graphene for both the conducting channel and, in oxidized form, the gate dielectric. These experiments were enabled by custom software written to fully utilize both instrument-based and computer-based data acquisition hardware and provide a simple measurement automation system. Graphene break junctions were studied and found to exhibit switching behavior in response to an electric field. This switching allows the devices to act as nonvolatile memory elements which have demonstrated thousands of writing cycles and long retention times. A model for device operation is proposed based on the formation and breaking of carbon-atom chains that bridge the junctions. Information storage was demonstrated using the concept of rank coding, in which information is stored in the relative conductance of multiple graphene switches in a memory cell. The high mobility and two dimensional nature of graphene make it an attractive material for field-effect transistors. Another ultrathin layered materialmd graphene's insulating analogue, graphite oxidemd was studied as an alternative to bulk gate dielectric materials such as Al2O3 or HfO 2. Transistors were fabricated comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. Electron transport measurements reveal minimal leakage through the graphite oxide at room temperature. Its breakdown electric field was found to be comparable to SiO2, typically ˜1-3 x 108 V/m, while its dielectric constant is slightly higher, kappa ≈ 4.3. As nanoelectronics experiments and their associated instrumentation continue to grow in complexity the need for powerful data acquisition software has only increased. This role has traditionally been filled by semiconductor parameter analyzers or desktop computers running LabVIEW. Mezurit 2 represents a hybrid approach, providing basic virtual instruments which can be controlled in concert through a comprehensive scripting interface. Each virtual instrument's model of operation is described and an architectural overview is provided.

SU-F-T-479: Estimation of the Accuracy in Respiratory-Gated Radiotherapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurosawa, T; Miyakawa, S; Sato, M

Purpose: Irregular respiratory patterns affects dose outputs in respiratorygated radiotherapy and there is no commercially available quality assurance (QA) system for it. We designed and developed a patient specific QA system for respiratory-gated radiotherapy to estimate irradiated output. Methods: Our in-house QA system for gating was composed of a personal computer with the USB-FSIO electronic circuit connecting to the linear accelerator (ONCOR-K, Toshiba Medical Systems). The linac implements a respiratory gating system (AZ-733V, Anzai Medical). During the beam was on, 4.2 V square-wave pulses were continually sent to the system. Our system can receive and count the pulses. At first,more » our system and an oscilloscope were compared to check the performance of our system. Next, basic estimation models were generated when ionization-chamber measurements were performed in gating using regular sinusoidal wave patterns (2.0, 2.5, 4.0, 8.0, 15 sec/cycle). During gated irradiation with the regular patterns, the number of the pulses per one gating window was measured using our system. Correlation between the number of the pulses per one gating and dose per the gating window were assessed to generate the estimation model. Finally, two irregular respiratory patterns were created and the accuracy of the estimation was evaluated. Results: Compared to the oscilloscope, our system worked similarly. The basic models were generated with the accuracy within 0.1%. The results of the gated irradiations with two irregular respiratory patterns show good agreement within 0.4% estimation accuracy. Conclusion: Our developed system shows good estimation for even irregular respiration patterns. The system would be a useful tool to verify the output for respiratory-gated radiotherapy.« less

Emergence of ion channel modal gating from independent subunit kinetics.

PubMed

Bicknell, Brendan A; Goodhill, Geoffrey J

2016-09-06

Many ion channels exhibit a slow stochastic switching between distinct modes of gating activity. This feature of channel behavior has pronounced implications for the dynamics of ionic currents and the signaling pathways that they regulate. A canonical example is the inositol 1,4,5-trisphosphate receptor (IP3R) channel, whose regulation of intracellular Ca(2+) concentration is essential for numerous cellular processes. However, the underlying biophysical mechanisms that give rise to modal gating in this and most other channels remain unknown. Although ion channels are composed of protein subunits, previous mathematical models of modal gating are coarse grained at the level of whole-channel states, limiting further dialogue between theory and experiment. Here we propose an origin for modal gating, by modeling the kinetics of ligand binding and conformational change in the IP3R at the subunit level. We find good agreement with experimental data over a wide range of ligand concentrations, accounting for equilibrium channel properties, transient responses to changing ligand conditions, and modal gating statistics. We show how this can be understood within a simple analytical framework and confirm our results with stochastic simulations. The model assumes that channel subunits are independent, demonstrating that cooperative binding or concerted conformational changes are not required for modal gating. Moreover, the model embodies a generally applicable principle: If a timescale separation exists in the kinetics of individual subunits, then modal gating can arise as an emergent property of channel behavior.

Electromechanical quantum simulators

NASA Astrophysics Data System (ADS)

Tacchino, F.; Chiesa, A.; LaHaye, M. D.; Carretta, S.; Gerace, D.

2018-06-01

Digital quantum simulators are among the most appealing applications of a quantum computer. Here we propose a universal, scalable, and integrated quantum computing platform based on tunable nonlinear electromechanical nano-oscillators. It is shown that very high operational fidelities for single- and two-qubits gates can be achieved in a minimal architecture, where qubits are encoded in the anharmonic vibrational modes of mechanical nanoresonators, whose effective coupling is mediated by virtual fluctuations of an intermediate superconducting artificial atom. An effective scheme to induce large single-phonon nonlinearities in nanoelectromechanical devices is explicitly discussed, thus opening the route to experimental investigation in this direction. Finally, we explicitly show the very high fidelities that can be reached for the digital quantum simulation of model Hamiltonians, by using realistic experimental parameters in state-of-the-art devices, and considering the transverse field Ising model as a paradigmatic example.

Generalized shortcuts to adiabaticity and enhanced robustness against decoherence

NASA Astrophysics Data System (ADS)

Santos, Alan C.; Sarandy, Marcelo S.

2018-01-01

Shortcuts to adiabaticity provide a general approach to mimic adiabatic quantum processes via arbitrarily fast evolutions in Hilbert space. For these counter-diabatic evolutions, higher speed comes at higher energy cost. Here, the counter-diabatic theory is employed as a minimal energy demanding scheme for speeding up adiabatic tasks. As a by-product, we show that this approach can be used to obtain infinite classes of transitionless models, including time-independent Hamiltonians under certain conditions over the eigenstates of the original Hamiltonian. We apply these results to investigate shortcuts to adiabaticity in decohering environments by introducing the requirement of a fixed energy resource. In this scenario, we show that generalized transitionless evolutions can be more robust against decoherence than their adiabatic counterparts. We illustrate this enhanced robustness both for the Landau-Zener model and for quantum gate Hamiltonians.

Super-resolution depth information from a short-wave infrared laser gated-viewing system by using correlated double sampling

NASA Astrophysics Data System (ADS)

Göhler, Benjamin; Lutzmann, Peter

2017-10-01

Primarily, a laser gated-viewing (GV) system provides range-gated 2D images without any range resolution within the range gate. By combining two GV images with slightly different gate positions, 3D information within a part of the range gate can be obtained. The depth resolution is higher (super-resolution) than the minimal gate shift step size in a tomographic sequence of the scene. For a state-of-the-art system with a typical frame rate of 20 Hz, the time difference between the two required GV images is 50 ms which may be too long in a dynamic scenario with moving objects. Therefore, we have applied this approach to the reset and signal level images of a new short-wave infrared (SWIR) GV camera whose read-out integrated circuit supports correlated double sampling (CDS) actually intended for the reduction of kTC noise (reset noise). These images are extracted from only one single laser pulse with a marginal time difference in between. The SWIR GV camera consists of 640 x 512 avalanche photodiodes based on mercury cadmium telluride with a pixel pitch of 15 μm. A Q-switched, flash lamp pumped solid-state laser with 1.57 μm wavelength (OPO), 52 mJ pulse energy after beam shaping, 7 ns pulse length and 20 Hz pulse repetition frequency is used for flash illumination. In this paper, the experimental set-up is described and the operating principle of CDS is explained. The method of deriving super-resolution depth information from a GV system by using CDS is introduced and optimized. Further, the range accuracy is estimated from measured image data.

Gated IR imaging with 128 × 128 HgCdTe electron avalanche photodiode FPA

NASA Astrophysics Data System (ADS)

Beck, Jeff; Woodall, Milton; Scritchfield, Richard; Ohlson, Martha; Wood, Lewis; Mitra, Pradip; Robinson, Jim

2007-04-01

The next generation of IR sensor systems will include active imaging capabilities. One example of such a system is a gated-active/passive system. The gated-active/passive system promises long-range target detection and identification. A detector that is capable of both active and passive modes of operation opens up the possibility of a self-aligned system that uses a single focal plane. The detector would need to be sensitive in the 3-5 μm band for passive mode operation. In the active mode, the detector would need to be sensitive in eye-safe range, e.g. 1.55 μm, and have internal gain to achieve the required system sensitivity. The MWIR HgCdTe electron injection avalanche photodiode (e-APD) not only provides state-of-the-art 3-5 μm spectral sensitivity, but also high avalanche photodiode gain without minimal excess noise. Gains of greater than 1000 have been measured in MWIR e-APDs with a gain independent excess noise factor of 1.3. This paper reports the application of the mid-wave HgCdTe e-APD for near-IR gated-active/passive imaging. Specifically a 128x128 FPA composed of 40 μm pitch, 4.2 μm to 5 μm cutoff, APD detectors with a custom readout integrated circuit was designed, fabricated, and tested. Median gains as high as 946 at 11 V bias with noise equivalent inputs as low as 0.4 photon were measured at 80 K. A gated imaging demonstration system was designed and built using commercially available parts. High resolution gated imagery out to 9 km was obtained with this system that demonstrated predicted MTF, precision gating, and sub 10 photon sensitivity.

Cognitive Diagnostic Analysis Using Hierarchically Structured Skills

ERIC Educational Resources Information Center

Su, Yu-Lan

2013-01-01

This dissertation proposes two modified cognitive diagnostic models (CDMs), the deterministic, inputs, noisy, "and" gate with hierarchy (DINA-H) model and the deterministic, inputs, noisy, "or" gate with hierarchy (DINO-H) model. Both models incorporate the hierarchical structures of the cognitive skills in the model estimation…

Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs

NASA Astrophysics Data System (ADS)

Ramanan, Narayanan; Lee, Bongmook; Misra, Veena

2016-03-01

Many passivation dielectrics are pursued for suppressing current collapse due to trapping/detrapping of access-region surface traps in AlGaN/GaN based metal oxide semiconductor heterojuction field effect transistors (MOS-HFETs). The suppression of current collapse can potentially be achieved either by reducing the interaction of surface traps with the gate via surface leakage current reduction, or by eliminating surface traps that can interact with the gate. But, the latter is undesirable since a high density of surface donor traps is required to sustain a high 2D electron gas density at the AlGaN/GaN heterointerface and provide a low ON-resistance. This presents a practical trade-off wherein a passivation dielectric with the optimal surface trap characteristics and minimal surface leakage is to be chosen. In this work, we compare MOS-HFETs fabricated with popular ALD gate/passivation dielectrics like SiO2, Al2O3, HfO2 and HfAlO along with an additional thick plasma-enhanced chemical vapor deposition SiO2 passivation. It is found that after annealing in N2 at 700 °C, the stack containing ALD HfAlO provides a combination of low surface leakage and a high density of shallow donor traps. Physics-based TCAD simulations confirm that this combination of properties helps quick de-trapping and minimal current collapse along with a low ON resistance.

Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement

NASA Astrophysics Data System (ADS)

Poorvasha, S.; Lakshmi, B.

2018-05-01

In this paper, RF performance analysis of InAs-based double gate (DG) tunnel field effect transistors (TFETs) is investigated in both qualitative and quantitative fashion. This investigation is carried out by varying the geometrical and doping parameters of TFETs to extract various RF parameters, unity gain cut-off frequency (f t), maximum oscillation frequency (f max), intrinsic gain and admittance (Y) parameters. An asymmetric gate oxide is introduced in the gate-drain overlap and compared with that of DG TFETs. Higher ON-current (I ON) of about 0.2 mA and less leakage current (I OFF) of 29 fA is achieved for DG TFET with gate-drain overlap. Due to increase in transconductance (g m), higher f t and intrinsic gain is attained for DG TFET with gate-drain overlap. Higher f max of 985 GHz is obtained for drain doping of 5 × 1017 cm‑3 because of the reduced gate-drain capacitance (C gd) with DG TFET with gate-drain overlap. In terms of Y-parameters, gate oxide thickness variation offers better performance due to the reduced values of C gd. A second order numerical polynomial model is generated for all the RF responses as a function of geometrical and doping parameters. The simulation results are compared with this numerical model where the predicted values match with the simulated values. Project supported by the Department of Science and Technology, Government of India under SERB Scheme (No. SERB/F/2660).

Redox rhythm reinforces the circadian clock to gate immune response.

PubMed

Zhou, Mian; Wang, Wei; Karapetyan, Sargis; Mwimba, Musoki; Marqués, Jorge; Buchler, Nicolas E; Dong, Xinnian

2015-07-23

Recent studies have shown that in addition to the transcriptional circadian clock, many organisms, including Arabidopsis, have a circadian redox rhythm driven by the organism's metabolic activities. It has been hypothesized that the redox rhythm is linked to the circadian clock, but the mechanism and the biological significance of this link have only begun to be investigated. Here we report that the master immune regulator NPR1 (non-expressor of pathogenesis-related gene 1) of Arabidopsis is a sensor of the plant's redox state and regulates transcription of core circadian clock genes even in the absence of pathogen challenge. Surprisingly, acute perturbation in the redox status triggered by the immune signal salicylic acid does not compromise the circadian clock but rather leads to its reinforcement. Mathematical modelling and subsequent experiments show that NPR1 reinforces the circadian clock without changing the period by regulating both the morning and the evening clock genes. This balanced network architecture helps plants gate their immune responses towards the morning and minimize costs on growth at night. Our study demonstrates how a sensitive redox rhythm interacts with a robust circadian clock to ensure proper responsiveness to environmental stimuli without compromising fitness of the organism.

Synthesis of large-area multilayer hexagonal boron nitride for high material performance.

PubMed

Kim, Soo Min; Hsu, Allen; Park, Min Ho; Chae, Sang Hoon; Yun, Seok Joon; Lee, Joo Song; Cho, Dae-Hyun; Fang, Wenjing; Lee, Changgu; Palacios, Tomás; Dresselhaus, Mildred; Kim, Ki Kang; Lee, Young Hee; Kong, Jing

2015-10-28

Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young's modulus: 1.16 ± 0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ∼ 24,000 cm(2) V(-1) s(-1) at room temperature, higher than that (∼ 13,000 (2) V(-1) s(-1)) with exfoliated h-BN. By placing additional h-BN on a SiO2/Si substrate for a MoS2 (WSe2) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times.

Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon

DOE PAGES

Witzel, Wayne; Montano, Ines; Muller, Richard P.; ...

2015-08-19

In this paper, we present a strategy for producing multiqubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. Energy-level transition errors are protected by adiabaticity and remaining phase errors are mitigated via dynamical decoupling. This is a powerful way to divide and conquer the various error channels. In order to accomplish this without violating a no-go theorem regarding black-box dynamically corrected gates [Phys. Rev. A 80, 032314 (2009)], we require a robust operating point (sweet spot) in control space where the qubits interactmore » with little sensitivity to noise. There are also energy gap requirements for effective adiabaticity. We apply our strategy to an architecture in Si with P donors where we assume we can shuttle electrons between different donors. Electron spins act as mobile ancillary qubits and P nuclear spins act as long-lived data qubits. Furthermore, this system can have a very robust operating point where the electron spin is bound to a donor in the quadratic Stark shift regime. High fidelity single qubit gates may be performed using well-established global magnetic resonance pulse sequences. Single electron-spin preparation and measurement has also been demonstrated. Thus, putting this all together, we present a robust universal gate set for quantum computation.« less

Prototyping of Poly(dimethylsiloxane) Interfaces for Flow Gating, Reagent Mixing, and Tubing Connection in Capillary Electrophoresis

PubMed Central

Zhang, Qiyang; Gong, Maojun

2014-01-01

Integrated microfluidic systems coupled with electrophoretic separations have broad application in biological and chemical analysis. Interfaces for the connection of various functional parts play a major role in the performance of a system. Here we developed a rapid prototyping method to fabricate monolithic poly(dimethylsiloxane) (PDMS) Interfaces for flow-gated injection, online reagent mixing, and tube-to-tube connection in an integrated capillary electrophoresis (CE) system. The basic idea was based on the properties of PDMS: elasticity, transparency, and suitability for prototyping. The molds for these interfaces were prepared by using commercially available stainless steel wires and nylon lines or silica capillaries. A steel wire was inserted through the diameter of a nylon line and a cross format was obtained as the mold for PDMS casting of flow gates and 4-way mixers. These interfaces accommodated tubing connection through PDMS elasticity and provided easy visual trouble shooting. The flow gate used smaller channel diameters thus reducing flow rate by 25 fold for effective gating compared with mechanically machined counterparts. Both PDMS mixers and the tube-to-tube connectors could minimize the sample dead volume by using an appropriate capillary configuration. As a whole, the prototyped PDMS interfaces are reusable, inexpensive, convenient for connection, and robust when integrated with the CE detection system. Therefore, these interfaces could see potential applications in CE and CE-coupled systems. PMID:24331370

Quasi-classical modeling of molecular quantum-dot cellular automata multidriver gates

NASA Astrophysics Data System (ADS)

Rahimi, Ehsan; Nejad, Shahram Mohammad

2012-05-01

Molecular quantum-dot cellular automata (mQCA) has received considerable attention in nanoscience. Unlike the current-based molecular switches, where the digital data is represented by the on/off states of the switches, in mQCA devices, binary information is encoded in charge configuration within molecular redox centers. The mQCA paradigm allows high device density and ultra-low power consumption. Digital mQCA gates are the building blocks of circuits in this paradigm. Design and analysis of these gates require quantum chemical calculations, which are demanding in computer time and memory. Therefore, developing simple models to probe mQCA gates is of paramount importance. We derive a semi-classical model to study the steady-state output polarization of mQCA multidriver gates, directly from the two-state approximation in electron transfer theory. The accuracy and validity of this model are analyzed using full quantum chemistry calculations. A complete set of logic gates, including inverters and minority voters, are implemented to provide an appropriate test bench in the two-dot mQCA regime. We also briefly discuss how the QCADesigner tool could find its application in simulation of mQCA devices.

Components of gating charge movement and S4 voltage-sensor exposure during activation of hERG channels.

PubMed

Wang, Zhuren; Dou, Ying; Goodchild, Samuel J; Es-Salah-Lamoureux, Zeineb; Fedida, David

2013-04-01

The human ether-á-go-go-related gene (hERG) K(+) channel encodes the pore-forming α subunit of the rapid delayed rectifier current, IKr, and has unique activation gating kinetics, in that the α subunit of the channel activates and deactivates very slowly, which focuses the role of IKr current to a critical period during action potential repolarization in the heart. Despite its physiological importance, fundamental mechanistic properties of hERG channel activation gating remain unclear, including how voltage-sensor movement rate limits pore opening. Here, we study this directly by recording voltage-sensor domain currents in mammalian cells for the first time and measuring the rates of voltage-sensor modification by [2-(trimethylammonium)ethyl] methanethiosulfonate chloride (MTSET). Gating currents recorded from hERG channels expressed in mammalian tsA201 cells using low resistance pipettes show two charge systems, defined as Q(1) and Q(2), with V(1/2)'s of -55.7 (equivalent charge, z = 1.60) and -54.2 mV (z = 1.30), respectively, with the Q(2) charge system carrying approximately two thirds of the overall gating charge. The time constants for charge movement at 0 mV were 2.5 and 36.2 ms for Q(1) and Q(2), decreasing to 4.3 ms for Q(2) at +60 mV, an order of magnitude faster than the time constants of ionic current appearance at these potentials. The voltage and time dependence of Q2 movement closely correlated with the rate of MTSET modification of I521C in the outermost region of the S4 segment, which had a V(1/2) of -64 mV and time constants of 36 ± 8.5 ms and 11.6 ± 6.3 ms at 0 and +60 mV, respectively. Modeling of Q(1) and Q(2) charge systems showed that a minimal scheme of three transitions is sufficient to account for the experimental findings. These data point to activation steps further downstream of voltage-sensor movement that provide the major delays to pore opening in hERG channels.

Alternans promotion in cardiac electrophysiology models by delay differential equations.

PubMed

Gomes, Johnny M; Dos Santos, Rodrigo Weber; Cherry, Elizabeth M

2017-09-01

Cardiac electrical alternans is a state of alternation between long and short action potentials and is frequently associated with harmful cardiac conditions. Different dynamic mechanisms can give rise to alternans; however, many cardiac models based on ordinary differential equations are not able to reproduce this phenomenon. A previous study showed that alternans can be induced by the introduction of delay differential equations (DDEs) in the formulations of the ion channel gating variables of a canine myocyte model. The present work demonstrates that this technique is not model-specific by successfully promoting alternans using DDEs for five cardiac electrophysiology models that describe different types of myocytes, with varying degrees of complexity. By analyzing results across the different models, we observe two potential requirements for alternans promotion via DDEs for ionic gates: (i) the gate must have a significant influence on the action potential duration and (ii) a delay must significantly impair the gate's recovery between consecutive action potentials.

A low-frequency noise model with carrier generation-recombination process for pentacene organic thin-film transistor

NASA Astrophysics Data System (ADS)

Han, C. Y.; Qian, L. X.; Leung, C. H.; Che, C. M.; Lai, P. T.

2013-07-01

By including the generation-recombination process of charge carriers in conduction channel, a model for low-frequency noise in pentacene organic thin-film transistors (OTFTs) is proposed. In this model, the slope and magnitude of power spectral density for low-frequency noise are related to the traps in the gate dielectric and accumulation layer of the OTFT for the first time. The model can well fit the measured low-frequency noise data of pentacene OTFTs with HfO2 or HfLaO gate dielectric, which validates this model, thus providing an estimate on the densities of traps in the gate dielectric and accumulation layer. It is revealed that the traps in the accumulation layer are much more than those in the gate dielectric, and so dominate the low-frequency noise of pentacene OTFTs.

NOTE: Implementation of angular response function modeling in SPECT simulations with GATE

NASA Astrophysics Data System (ADS)

Descourt, P.; Carlier, T.; Du, Y.; Song, X.; Buvat, I.; Frey, E. C.; Bardies, M.; Tsui, B. M. W.; Visvikis, D.

2010-05-01

Among Monte Carlo simulation codes in medical imaging, the GATE simulation platform is widely used today given its flexibility and accuracy, despite long run times, which in SPECT simulations are mostly spent in tracking photons through the collimators. In this work, a tabulated model of the collimator/detector response was implemented within the GATE framework to significantly reduce the simulation times in SPECT. This implementation uses the angular response function (ARF) model. The performance of the implemented ARF approach has been compared to standard SPECT GATE simulations in terms of the ARF tables' accuracy, overall SPECT system performance and run times. Considering the simulation of the Siemens Symbia T SPECT system using high-energy collimators, differences of less than 1% were measured between the ARF-based and the standard GATE-based simulations, while considering the same noise level in the projections, acceleration factors of up to 180 were obtained when simulating a planar 364 keV source seen with the same SPECT system. The ARF-based and the standard GATE simulation results also agreed very well when considering a four-head SPECT simulation of a realistic Jaszczak phantom filled with iodine-131, with a resulting acceleration factor of 100. In conclusion, the implementation of an ARF-based model of collimator/detector response for SPECT simulations within GATE significantly reduces the simulation run times without compromising accuracy.

Environmental management through sluice gated bed-dam: a revived strategy for the control of Anopheles fluviatilis breeding in streams

PubMed Central

Sahu, S.S.; Gunasekaran, K.; Jambulingam, P.

2014-01-01

Background & objectives: Integrated vector management (IVM) emphasizes sustainable eco-friendly methods and minimal use of chemicals. In this context, the present study highlights the environmental control of breeding of Anopheles fluviatilis, the primary malaria vector, through water management in a natural stream in Koraput district, Odisha, India. Methods: The District Rural Development Agency (DRDA), Koraput, constructed two bed-dams across streams, one in Barigaon and the other in Pipalapodar village. The bed-dam in the former village was fitted with two sluice gates whereas the bed dam constructed in the latter village was without the sluice gate. The sluice gates were opened once in a week on a fixed day to flush out the water from the dam. Anopheles immatures were sampled systematically in the streams using a dipper for density measurement and species composition. Results: There was a reduction of 84.9 per cent in the proportion of positive dips for Anopheles larvae/pupae and a reduction of 98.4 per cent in immature density (number/dip) of An. fluviatilis in the experimental downstream compared to the control following opening of the sluice gates. Interpretation & conclusions: Our findins showed that opening of sluice gates of the bed-dam regularly once in a week resulted in the control of vector breeding in the downstream due to the flushing effect of the water released with a high flow from the bed-dam that stagnated water in the upstream. The outcome of the study encourages upscaling this measure to other areas, wherever feasible. PMID:25297364

3D modeling of dual-gate FinFET.

PubMed

Mil'shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

2012-11-13

The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence on the strengths of the electrical field along the channel. However, in cases when the ratio of FinFET volume to its surface dramatically decreases, one should carefully consider the surface boundary conditions of the device. Moreover, the inherent non-planar nature of a FinFET demands 3D modeling for accurate analysis of the device performance. Using the Silvaco modeling tool with quantization effects, we modeled a physical FinFET described in the work of Hisamoto et al. (IEEE Tran. Elec. Devices 47:12, 2000) in 3D. We compared it with a 2D model of the same device. We demonstrated that 3D modeling produces more accurate results. As 3D modeling results came close to experimental measurements, we made the next step of the study by designing a dual-gate FinFET biased at Vg1 >Vg2. It is shown that the dual-gate FinFET carries higher transconductance than the single-gate device.

3D modeling of dual-gate FinFET

NASA Astrophysics Data System (ADS)

Mil'shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

2012-11-01

The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence on the strengths of the electrical field along the channel. However, in cases when the ratio of FinFET volume to its surface dramatically decreases, one should carefully consider the surface boundary conditions of the device. Moreover, the inherent non-planar nature of a FinFET demands 3D modeling for accurate analysis of the device performance. Using the Silvaco modeling tool with quantization effects, we modeled a physical FinFET described in the work of Hisamoto et al. (IEEE Tran. Elec. Devices 47:12, 2000) in 3D. We compared it with a 2D model of the same device. We demonstrated that 3D modeling produces more accurate results. As 3D modeling results came close to experimental measurements, we made the next step of the study by designing a dual-gate FinFET biased at V g1 > V g2. It is shown that the dual-gate FinFET carries higher transconductance than the single-gate device.

Adaptive sampling of AEM transients

NASA Astrophysics Data System (ADS)

Di Massa, Domenico; Florio, Giovanni; Viezzoli, Andrea

2016-02-01

This paper focuses on the sampling of the electromagnetic transient as acquired by airborne time-domain electromagnetic (TDEM) systems. Typically, the sampling of the electromagnetic transient is done using a fixed number of gates whose width grows logarithmically (log-gating). The log-gating has two main benefits: improving the signal to noise (S/N) ratio at late times, when the electromagnetic signal has amplitudes equal or lower than the natural background noise, and ensuring a good resolution at the early times. However, as a result of fixed time gates, the conventional log-gating does not consider any geological variations in the surveyed area, nor the possibly varying characteristics of the measured signal. We show, using synthetic models, how a different, flexible sampling scheme can increase the resolution of resistivity models. We propose a new sampling method, which adapts the gating on the base of the slope variations in the electromagnetic (EM) transient. The use of such an alternative sampling scheme aims to get more accurate inverse models by extracting the geoelectrical information from the measured data in an optimal way.

A new DG nanoscale TFET based on MOSFETs by using source gate electrode: 2D simulation and an analytical potential model

NASA Astrophysics Data System (ADS)

Ramezani, Zeinab; Orouji, Ali A.

2017-08-01

This paper suggests and investigates a double-gate (DG) MOSFET, which emulates tunnel field effect transistors (M-TFET). We have combined this novel concept into a double-gate MOSFET, which behaves as a tunneling field effect transistor by work function engineering. In the proposed structure, in addition to the main gate, we utilize another gate over the source region with zero applied voltage and a proper work function to convert the source region from N+ to P+. We check the impact obtained by varying the source gate work function and source doping on the device parameters. The simulation results of the M-TFET indicate that it is a suitable case for a switching performance. Also, we present a two-dimensional analytic potential model of the proposed structure by solving the Poisson's equation in x and y directions and by derivatives from the potential profile; thus, the electric field is achieved. To validate our present model, we use the SILVACO ATLAS device simulator. The analytical results have been compared with it.

Gate modulation of proton transport in a nanopore.

PubMed

Mei, Lanju; Yeh, Li-Hsien; Qian, Shizhi

2016-03-14

Proton transport in confined spaces plays a crucial role in many biological processes as well as in modern technological applications, such as fuel cells. To achieve active control of proton conductance, we investigate for the first time the gate modulation of proton transport in a pH-regulated nanopore by a multi-ion model. The model takes into account surface protonation/deprotonation reactions, surface curvature, electroosmotic flow, Stern layer, and electric double layer overlap. The proposed model is validated by good agreement with the existing experimental data on nanopore conductance with and without a gate voltage. The results show that the modulation of proton transport in a nanopore depends on the concentration of the background salt and solution pH. Without background salt, the gated nanopore exhibits an interesting ambipolar conductance behavior when pH is close to the isoelectric point of the dielectric pore material, and the net ionic and proton conductance can be actively regulated with a gate voltage as low as 1 V. The higher the background salt concentration, the lower is the performance of the gate control on the proton transport.

7. VIEW OF INCLINED OUTLET GATE WHEEL, STEM AND STEM ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

7. VIEW OF INCLINED OUTLET GATE WHEEL, STEM AND STEM GUIDE (15' HARDESTY MODEL 115 GATE), LOOKING NORTHWEST - High Mountain Dams in Bonneville Unit, Marjorie Lake Dam, Wasatch National Forest, Kamas, Summit County, UT

Towards topological quantum computer

NASA Astrophysics Data System (ADS)

Melnikov, D.; Mironov, A.; Mironov, S.; Morozov, A.; Morozov, An.

2018-01-01

Quantum R-matrices, the entangling deformations of non-entangling (classical) permutations, provide a distinguished basis in the space of unitary evolutions and, consequently, a natural choice for a minimal set of basic operations (universal gates) for quantum computation. Yet they play a special role in group theory, integrable systems and modern theory of non-perturbative calculations in quantum field and string theory. Despite recent developments in those fields the idea of topological quantum computing and use of R-matrices, in particular, practically reduce to reinterpretation of standard sets of quantum gates, and subsequently algorithms, in terms of available topological ones. In this paper we summarize a modern view on quantum R-matrix calculus and propose to look at the R-matrices acting in the space of irreducible representations, which are unitary for the real-valued couplings in Chern-Simons theory, as the fundamental set of universal gates for topological quantum computer. Such an approach calls for a more thorough investigation of the relation between topological invariants of knots and quantum algorithms.

Elastomeric microvalve geometry affects haemocompatibility.

PubMed

Szydzik, Crispin; Brazilek, Rose J; Khoshmanesh, Khashayar; Akbaridoust, Farzan; Knoerzer, Markus; Thurgood, Peter; Muir, Ineke; Marusic, Ivan; Nandurkar, Harshal; Mitchell, Arnan; Nesbitt, Warwick S

2018-06-12

This paper reports on the parameters that determine the haemocompatibility of elastomeric microvalves for blood handling in microfluidic systems. Using a comprehensive investigation of blood function, we describe a hierarchy of haemocompatibility as a function of microvalve geometry and identify a "normally-closed" v-gate pneumatic microvalve design that minimally affects blood plasma fibrinogen and von Willebrand factor composition, minimises effects on erythrocyte structure and function, and limits effects on platelet activation and aggregation, while facilitating rapid switching control for blood sample delivery. We propose that the haemodynamic profile of valve gate geometries is a significant determinant of platelet-dependent biofouling and haemocompatibility. Overall our findings suggest that modification of microvalve gate geometry and consequently haemodynamic profile can improve haemocompatibility, while minimising the requirement for chemical or protein modification of microfluidic surfaces. This biological insight and approach may be harnessed to inform future haemocompatible microfluidic valve and component design, and is an advance towards lab-on-chip automation for blood based diagnostic systems.

Time delay and integration array (TDI) using charge transfer device technology. Phase 2, volume 1: Technical

NASA Technical Reports Server (NTRS)

1977-01-01

The 20x9 TDI array was developed to meet the LANDSAT Thematic Mapper Requirements. This array is based upon a self-aligned, transparent gate, buried channel process. The process features: (1) buried channel, four phase, overlapping gate CCD's for high transfer efficiency without fat zero; (2) self-aligned transistors to minimize clock feedthrough and parasitic capacitance; and (3) transparent tin oxide electrode for high quantum efficiency with front surface irradiation. The requirements placed on the array and the performance achieved are summarized. This data is the result of flat field measurements only, no imaging or dynamic target measurements were made during this program. Measurements were performed with two different test stands. The bench test equipment fabricated for this program operated at the 8 micro sec line time and employed simple sampling of the gated MOSFET output video signal. The second stand employed Correlated Doubled Sampling (CDS) and operated at 79.2 micro sec line time.

Kinetic gating mechanism of DNA damage recognition by Rad4/XPC

NASA Astrophysics Data System (ADS)

Chen, Xuejing; Velmurugu, Yogambigai; Zheng, Guanqun; Park, Beomseok; Shim, Yoonjung; Kim, Youngchang; Liu, Lili; van Houten, Bennett; He, Chuan; Ansari, Anjum; Min, Jung-Hyun

2015-01-01

The xeroderma pigmentosum C (XPC) complex initiates nucleotide excision repair by recognizing DNA lesions before recruiting downstream factors. How XPC detects structurally diverse lesions embedded within normal DNA is unknown. Here we present a crystal structure that captures the yeast XPC orthologue (Rad4) on a single register of undamaged DNA. The structure shows that a disulphide-tethered Rad4 flips out normal nucleotides and adopts a conformation similar to that seen with damaged DNA. Contrary to many DNA repair enzymes that can directly reject non-target sites as structural misfits, our results suggest that Rad4/XPC uses a kinetic gating mechanism whereby lesion selectivity arises from the kinetic competition between DNA opening and the residence time of Rad4/XPC per site. This mechanism is further supported by measurements of Rad4-induced lesion-opening times using temperature-jump perturbation spectroscopy. Kinetic gating may be a general mechanism used by site-specific DNA-binding proteins to minimize time-consuming interrogations of non-target sites.

Kinetic gating mechanism of DNA damage recognition by Rad4/XPC

DOE PAGES

Chen, Xuejing; Velmurugu, Yogambigai; Zheng, Guanqun; ...

2015-01-06

The xeroderma pigmentosum C (XPC) complex initiates nucleotide excision repair by recognizing DNA lesions before recruiting downstream factors. How XPC detects structurally diverse lesions embedded within normal DNA is unknown. Here we present a crystal structure that captures the yeast XPC orthologue (Rad4) on a single register of undamaged DNA. The structure shows that a disulphide-tethered Rad4 flips out normal nucleotides and adopts a conformation similar to that seen with damaged DNA. Contrary to many DNA repair enzymes that can directly reject non-target sites as structural misfits, our results suggest that Rad4/XPC uses a kinetic gating mechanism whereby lesion selectivitymore » arises from the kinetic competition between DNA opening and the residence time of Rad4/XPC per site. This mechanism is further supported by measurements of Rad4-induced lesion-opening times using temperature-jump perturbation spectroscopy. Lastly, kinetic gating may be a general mechanism used by site-specific DNA-binding proteins to minimize time-consuming interrogations of non-target sites.« less

Efficient quantum circuits for one-way quantum computing.

PubMed

Tanamoto, Tetsufumi; Liu, Yu-Xi; Hu, Xuedong; Nori, Franco

2009-03-13

While Ising-type interactions are ideal for implementing controlled phase flip gates in one-way quantum computing, natural interactions between solid-state qubits are most often described by either the XY or the Heisenberg models. We show an efficient way of generating cluster states directly using either the imaginary SWAP (iSWAP) gate for the XY model, or the sqrt[SWAP] gate for the Heisenberg model. Our approach thus makes one-way quantum computing more feasible for solid-state devices.

Methodology for Analysis, Modeling and Simulation of Airport Gate-waiting Delays

NASA Astrophysics Data System (ADS)

Wang, Jianfeng

This dissertation presents methodologies to estimate gate-waiting delays from historical data, to identify gate-waiting-delay functional causes in major U.S. airports, and to evaluate the impact of gate operation disruptions and mitigation strategies on gate-waiting delay. Airport gates are a resource of congestion in the air transportation system. When an arriving flight cannot pull into its gate, the delay it experiences is called gate-waiting delay. Some possible reasons for gate-waiting delay are: the gate is occupied, gate staff or equipment is unavailable, the weather prevents the use of the gate (e.g. lightning), or the airline has a preferred gate assignment. Gate-waiting delays potentially stay with the aircraft throughout the day (unless they are absorbed), adding costs to passengers and the airlines. As the volume of flights increases, ensuring that airport gates do not become a choke point of the system is critical. The first part of the dissertation presents a methodology for estimating gate-waiting delays based on historical, publicly available sources. Analysis of gate-waiting delays at major U.S. airports in the summer of 2007 identifies the following. (i) Gate-waiting delay is not a significant problem on majority of days; however, the worst delay days (e.g. 4% of the days at LGA) are extreme outliers. (ii) The Atlanta International Airport (ATL), the John F. Kennedy International Airport (JFK), the Dallas/Fort Worth International Airport (DFW) and the Philadelphia International Airport (PHL) experience the highest gate-waiting delays among major U.S. airports. (iii) There is a significant gate-waiting-delay difference between airlines due to a disproportional gate allocation. (iv) Gate-waiting delay is sensitive to time of a day and schedule peaks. According to basic principles of queueing theory, gate-waiting delay can be attributed to over-scheduling, higher-than-scheduled arrival rate, longer-than-scheduled gate-occupancy time, and reduced gate availability. Analysis of the worst days at six major airports in the summer of 2007 indicates that major gate-waiting delays are primarily due to operational disruptions---specifically, extended gate occupancy time, reduced gate availability and higher-than-scheduled arrival rate (usually due to arrival delay). Major gate-waiting delays are not a result of over-scheduling. The second part of this dissertation presents a simulation model to evaluate the impact of gate operational disruptions and gate-waiting-delay mitigation strategies, including building new gates, implementing common gates, using overnight off-gate parking and adopting self-docking gates. Simulation results show the following effects of disruptions: (i) The impact of arrival delay in a time window (e.g. 7 pm to 9 pm) on gate-waiting delay is bounded. (ii) The impact of longer-than-scheduled gate-occupancy times in a time window on gate-waiting delay can be unbounded and gate-waiting delay can increase linearly as the disruption level increases. (iii) Small reductions in gate availability have a small impact on gate-waiting delay due to slack gate capacity, while larger reductions have a non-linear impact as slack gate capacity is used up. Simulation results show the following effects of mitigation strategies: (i) Implementing common gates is an effective mitigation strategy, especially for airports with a flight schedule not dominated by one carrier, such as LGA. (ii) The overnight off-gate rule is effective in mitigating gate-waiting delay for flights stranded overnight following departure cancellations. This is especially true at airports where the gate utilization is at maximum overnight, such as LGA and DFW. The overnight off-gate rule can also be very effective to mitigate gate-waiting delay due to operational disruptions in evenings. (iii) Self-docking gates are effective in mitigating gate-waiting delay due to reduced gate availability.

A phantom evaluation of a stereo-vision surface imaging system for radiotherapy patient setup

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bert, Christoph; Metheany, Katherine G.; Doppke, Karen

2005-09-15

External beam irradiation requires precise positioning of the target relative to the treatment planning coordinate system. A three-dimensional (3D) surface imaging system for patient positioning has recently been installed in one of our linear accelerator (linac) rooms. The device utilizes close-range photogrammetry to generate a 3D model of the patient's surface. This geometric model can be made to look like a digital camera image if wrapped with a gray-level image (texture mapping) that shows surface coloration. The system is calibrated to the linac coordinate system and has been designed as a patient setup device. To reproduce patient position in fractionatedmore » radiotherapy, the daily patient surface model is registered to a previously recorded reference surface. Using surface registration, the system calculates the rigid-body transformation that minimizes the distance between the treatment and the reference surface models in a region-of-interest (ROI). This transformation is expressed as a set of new couch coordinates at which the patient position best matches with the reference data. If respiratory motion is a concern, the surface can be obtained with a gated acquisition at a specified phase of the respiratory cycle. To analyze the accuracy of the system, we performed several experiments with phantoms to assess stability, alignment accuracy, precision of the gating function, and surface topology. The reproducibility of surface measurements was tested for periods up to 57 h. Each recorded frame was registered to the reference surface to calculate the required couch adjustment. The system stability over this time period was better than 0.5 mm. To measure the accuracy of the system to detect and quantify patient shift relative to a reference image, we compared the shift detected by the surface imaging system with known couch transitions in a phantom study. The maximum standard deviation was 0.75 mm for the three translational degrees of freedom, and less than 0.1 deg. for each rotation. Surface model precision was tested against computed tomography (CT)-derived surface topology. The root-mean-square rms of the distance between the surfaces was 0.65 mm, excluding regions where beam hardening caused artifacts in the CT data. Measurements were made to test the gated acquisition mode. The time-dependent amplitude was measured with the surface imaging system and an established respiratory gating system based on infrared (IR)-marker detection. The measured motion trajectories from both systems were compared to the known trajectory of the stage. The standard deviations of the amplitude differences to the motor trajectory were 0.04 and 0.15 mm for the IR-marker system and the 3D surface imaging system, respectively. A limitation of the surface-imaging device is the frame rate of 6.5 Hz, because rapid changes of the motion trajectory cannot be detected. In conclusion, the system is accurate and sufficiently stable to be used in the clinic. The errors computed when comparing the surface model with CT geometry were submillimeter, and deviations in the alignment and gating-signal tests were of the same magnitude.« less

Optimal control of universal quantum gates in a double quantum dot

NASA Astrophysics Data System (ADS)

Castelano, Leonardo K.; de Lima, Emanuel F.; Madureira, Justino R.; Degani, Marcos H.; Maialle, Marcelo Z.

2018-06-01

We theoretically investigate electron spin operations driven by applied electric fields in a semiconductor double quantum dot (DQD) formed in a nanowire with longitudinal potential modulated by local gating. We develop a model that describes the process of loading and unloading the DQD taking into account the overlap between the electron wave function and the leads. Such a model considers the spatial occupation and the spin Pauli blockade in a time-dependent fashion due to the highly mixed states driven by the external electric field. Moreover, we present a road map based on the quantum optimal control theory (QOCT) to find a specific electric field that performs two-qubit quantum gates on a faster timescale and with higher possible fidelity. By employing the QOCT, we demonstrate the possibility of performing within high efficiency a universal set of quantum gates {cnot, H, and T } , where cnot is the controlled-not gate, H is the Hadamard gate, and T is the π /8 gate, even in the presence of the loading/unloading process and charge noise effects. Furthermore, by varying the intensity of the applied magnetic field B , the optimized fidelity of the gates oscillates with a period inversely proportional to the gate operation time tf. This behavior can be useful to attain higher fidelity for fast gate operations (>1 GHz) by appropriately choosing B and tf to produce a maximum of the oscillation.

The urgency-gating model can explain the effects of early evidence.

PubMed

Carland, Matthew A; Thura, David; Cisek, Paul

2015-12-01

In a recent report, Winkel, Keuken, van Maanen, Wagenmakers & Forstmann (Psychonomics Bulletin and Review 21(3): 777-784, 2014) show that during a random-dot motion discrimination task, early differences in motion evidence can influence reaction times (RTs) and error rates in human subjects. They use this as an argument in favor of the drift-diffusion model and against the urgency-gating model. However, their implementation of the urgency-gating model is incomplete, as it lacks the low-pass filter that is necessary to deal with noisy input such as the motion signal used in their experimental task. Furthermore, by focusing analyses solely on comparison of mean RTs they overestimate how long early information influences individual trials. Here, we show that if the urgency-gating model is correctly implemented, including a low-pass filter with a 250 ms time constant, it can successfully reproduce the results of the Winkel et al. experiment.

A step by step selection method for the location and the size of a waste-to-energy facility targeting the maximum output energy and minimization of gate fee.

PubMed

Kyriakis, Efstathios; Psomopoulos, Constantinos; Kokkotis, Panagiotis; Bourtsalas, Athanasios; Themelis, Nikolaos

2017-06-23

This study attempts the development of an algorithm in order to present a step by step selection method for the location and the size of a waste-to-energy facility targeting the maximum output energy, also considering the basic obstacle which is in many cases, the gate fee. Various parameters identified and evaluated in order to formulate the proposed decision making method in the form of an algorithm. The principle simulation input is the amount of municipal solid wastes (MSW) available for incineration and along with its net calorific value are the most important factors for the feasibility of the plant. Moreover, the research is focused both on the parameters that could increase the energy production and those that affect the R1 energy efficiency factor. Estimation of the final gate fee is achieved through the economic analysis of the entire project by investigating both expenses and revenues which are expected according to the selected site and outputs of the facility. In this point, a number of commonly revenue methods were included in the algorithm. The developed algorithm has been validated using three case studies in Greece-Athens, Thessaloniki, and Central Greece, where the cities of Larisa and Volos have been selected for the application of the proposed decision making tool. These case studies were selected based on a previous publication made by two of the authors, in which these areas where examined. Results reveal that the development of a «solid» methodological approach in selecting the site and the size of waste-to-energy (WtE) facility can be feasible. However, the maximization of the energy efficiency factor R1 requires high utilization factors while the minimization of the final gate fee requires high R1 and high metals recovery from the bottom ash as well as economic exploitation of recovered raw materials if any.

Timing and efficacy of Ca2+ channel activation in hippocampal mossy fiber boutons.

PubMed

Bischofberger, Josef; Geiger, Jörg R P; Jonas, Peter

2002-12-15

The presynaptic Ca2+ signal is a key determinant of transmitter release at chemical synapses. In cortical synaptic terminals, however, little is known about the kinetic properties of the presynaptic Ca2+ channels. To investigate the timing and magnitude of the presynaptic Ca2+ inflow, we performed whole-cell patch-clamp recordings from mossy fiber boutons (MFBs) in rat hippocampus. MFBs showed large high-voltage-activated Ca(2+) currents, with a maximal amplitude of approximately 100 pA at a membrane potential of 0 mV. Both activation and deactivation were fast, with time constants in the submillisecond range at a temperature of approximately 23 degrees C. An MFB action potential (AP) applied as a voltage-clamp command evoked a transient Ca2+ current with an average amplitude of approximately 170 pA and a half-duration of 580 microsec. A prepulse to +40 mV had only minimal effects on the AP-evoked Ca2+ current, indicating that presynaptic APs open the voltage-gated Ca2+ channels very effectively. On the basis of the experimental data, we developed a kinetic model with four closed states and one open state, linked by voltage-dependent rate constants. Simulations of the Ca2+ current could reproduce the experimental data, including the large amplitude and rapid time course of the current evoked by MFB APs. Furthermore, the simulations indicate that the shape of the presynaptic AP and the gating kinetics of the Ca2+ channels are tuned to produce a maximal Ca2+ influx during a minimal period of time. The precise timing and high efficacy of Ca2+ channel activation at this cortical glutamatergic synapse may be important for synchronous transmitter release and temporal information processing.

5. VIEW OF INCLINED OUTLET GATE WHEEL, STEM AND STEM ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

5. VIEW OF INCLINED OUTLET GATE WHEEL, STEM AND STEM GUIDE, (12' DIAMETER HARDESTY MODEL 112 CIRCULAR GATE), LOOKING NORTHEAST - High Mountain Dams in Bonneville Unit, Island Lake Dam, Wasatch National Forest, Kamas, Summit County, UT

ECG-gated interventional cardiac reconstruction for non-periodic motion.

PubMed

Rohkohl, Christopher; Lauritsch, Günter; Biller, Lisa; Hornegger, Joachim

2010-01-01

The 3-D reconstruction of cardiac vasculature using C-arm CT is an active and challenging field of research. In interventional environments patients often do have arrhythmic heart signals or cannot hold breath during the complete data acquisition. This important group of patients cannot be reconstructed with current approaches that do strongly depend on a high degree of cardiac motion periodicity for working properly. In a last year's MICCAI contribution a first algorithm was presented that is able to estimate non-periodic 4-D motion patterns. However, to some degree that algorithm still depends on periodicity, as it requires a prior image which is obtained using a simple ECG-gated reconstruction. In this work we aim to provide a solution to this problem by developing a motion compensated ECG-gating algorithm. It is built upon a 4-D time-continuous affine motion model which is capable of compactly describing highly non-periodic motion patterns. A stochastic optimization scheme is derived which minimizes the error between the measured projection data and the forward projection of the motion compensated reconstruction. For evaluation, the algorithm is applied to 5 datasets of the left coronary arteries of patients that have ignored the breath hold command and/or had arrhythmic heart signals during the data acquisition. By applying the developed algorithm the average visibility of the vessel segments could be increased by 27%. The results show that the proposed algorithm provides excellent reconstruction quality in cases where classical approaches fail. The algorithm is highly parallelizable and a clinically feasible runtime of under 4 minutes is achieved using modern graphics card hardware.

Gate sequence for continuous variable one-way quantum computation

PubMed Central

Su, Xiaolong; Hao, Shuhong; Deng, Xiaowei; Ma, Lingyu; Wang, Meihong; Jia, Xiaojun; Xie, Changde; Peng, Kunchi

2013-01-01

Measurement-based one-way quantum computation using cluster states as resources provides an efficient model to perform computation and information processing of quantum codes. Arbitrary Gaussian quantum computation can be implemented sufficiently by long single-mode and two-mode gate sequences. However, continuous variable gate sequences have not been realized so far due to an absence of cluster states larger than four submodes. Here we present the first continuous variable gate sequence consisting of a single-mode squeezing gate and a two-mode controlled-phase gate based on a six-mode cluster state. The quantum property of this gate sequence is confirmed by the fidelities and the quantum entanglement of two output modes, which depend on both the squeezing and controlled-phase gates. The experiment demonstrates the feasibility of implementing Gaussian quantum computation by means of accessible gate sequences.

Experimental teleportation of a quantum controlled-NOT gate.

PubMed

Huang, Yun-Feng; Ren, Xi-Feng; Zhang, Yong-Sheng; Duan, Lu-Ming; Guo, Guang-Can

2004-12-10

Teleportation of quantum gates is a critical step for the implementation of quantum networking and teleportation-based models of quantum computation. We report an experimental demonstration of teleportation of the prototypical quantum controlled-NOT (CNOT) gate. Assisted with linear optical manipulations, photon entanglement produced from parametric down-conversion, and postselection from the coincidence measurements, we teleport the quantum CNOT gate from acting on local qubits to acting on remote qubits. The quality of the quantum gate teleportation is characterized through the method of quantum process tomography, with an average fidelity of 0.84 demonstrated for the teleported gate.

Mickey Mouse Goes to Jurassic Park: The Challenge of Technology for Leisure.

ERIC Educational Resources Information Center

Freeman, William H.

This paper examines the family vacation as a common leisure experience, with emphasis on the rise of the theme park. Theme parks, designed to enable parents to entertain everyone in the family with minimal frustration in organization and application, provide a single-price, inside-the-gate, complete experience. In 1955, Disneyland opened in…

A compact model of the reverse gate-leakage current in GaN-based HEMTs

NASA Astrophysics Data System (ADS)

Ma, Xiaoyu; Huang, Junkai; Fang, Jielin; Deng, Wanling

2016-12-01

The gate-leakage behavior in GaN-based high electron mobility transistors (HEMTs) is studied as a function of applied bias and temperature. A model to calculate this current is given, which shows that trap-assisted tunneling, trap-assisted Frenkel-Poole (FP) emission, and direct Fowler-Nordheim (FN) tunneling have their main contributions at different electric field regions. In addition, the proposed model clearly illustrates the effect of traps and their assistance to the gate leakage. We have demonstrated the validity of the model by comparisons between model simulation results and measured experimental data of HEMTs, and a good agreement is obtained.

Variations of Contact Resistance in Dual-Gated Monolayer Molybdenum Disulfide Transistors Depending on Gate Bias Selection

NASA Astrophysics Data System (ADS)

Tran, P. X.

2017-06-01

Monolayer molybdenum disulfide (MoS2) is considered an alternative two-dimensional material for high performance ultra-thin field-effect transistors. MoS2 is a triple atomic layer with a direct 1.8 eV bandgap. Bulk MoS2 has an additional indirect bandgap of 1.2 eV, which leads to high current on/off ratio around 108. Flakes of MoS2 can be obtained by mechanical exfoliation or grown by chemical vapor deposition. Intrinsic cut-off frequency of multilayer MoS2 transistor has reached 42 GHz. Chemical doping of MoS2 is challenging and results in reduction of contact resistance. This paper focuses on modeling of dual-gated monolayer MoS2 transistors with effective mobility of carriers varying from 0.6 cm2/V s to 750 cm2/V s. In agreement with experimental data, the model demonstrates that in back-gate bias devices, the contact resistance decreases almost exponentially with increasing gate bias, whereas in top-gate bias devices, the contact resistance stays invariant when varying gate bias.

Discharge ratings for control gates at Mississippi River lock and dam 12, Bellevue, Iowa

USGS Publications Warehouse

Heinitz, Albert J.

1986-01-01

The water level of the navigation pools on the Mississippi River are maintained by the operation of tainter and roller gates at the locks and dams. Discharge ratings for the gates on Lock and Dam 12, at Bellevue, Iowa, were developed from current-meter discharge measurements made in the forebays of the gate structures. Methodology is given to accurately compute the gate openings of the tainter gates. Discharge coefficients, in equations that express discharge as a function of tailwater head , forebay head, and height of gate opening, were determined for conditions of submerged-orifice and fee-weir flow. A comparison of the rating discharges to the hydraulic-model rating discharges is given for submerged orifice flow for the tainter and roller gates.

Enhanced transconductance in a double-gate graphene field-effect transistor

NASA Astrophysics Data System (ADS)

Hwang, Byeong-Woon; Yeom, Hye-In; Kim, Daewon; Kim, Choong-Ki; Lee, Dongil; Choi, Yang-Kyu

2018-03-01

Multi-gate transistors, such as double-gate, tri-gate and gate-all-around transistors are the most advanced Si transistor structure today. Here, a genuine double-gate transistor with a graphene channel is experimentally demonstrated. The top and bottom gates of the double-gate graphene field-effect transistor (DG GFET) are electrically connected so that the conductivity of the graphene channel can be modulated simultaneously by both the top and bottom gate. A single-gate graphene field-effect transistor (SG GFET) with only the top gate is also fabricated as a control device. For systematical analysis, the transfer characteristics of both GFETs were measured and compared. Whereas the maximum transconductance of the SG GFET was 17.1 μS/μm, that of the DG GFET was 25.7 μS/μm, which is approximately a 50% enhancement. The enhancement of the transconductance was reproduced and comprehensively explained by a physics-based compact model for GFETs. The investigation of the enhanced transfer characteristics of the DG GFET in this work shows the possibility of a multi-gate architecture for high-performance graphene transistor technology.

Improved Range Estimation Model for Three-Dimensional (3D) Range Gated Reconstruction

PubMed Central

Chua, Sing Yee; Guo, Ningqun; Tan, Ching Seong; Wang, Xin

2017-01-01

Accuracy is an important measure of system performance and remains a challenge in 3D range gated reconstruction despite the advancement in laser and sensor technology. The weighted average model that is commonly used for range estimation is heavily influenced by the intensity variation due to various factors. Accuracy improvement in term of range estimation is therefore important to fully optimise the system performance. In this paper, a 3D range gated reconstruction model is derived based on the operating principles of range gated imaging and time slicing reconstruction, fundamental of radiant energy, Laser Detection And Ranging (LADAR), and Bidirectional Reflection Distribution Function (BRDF). Accordingly, a new range estimation model is proposed to alleviate the effects induced by distance, target reflection, and range distortion. From the experimental results, the proposed model outperforms the conventional weighted average model to improve the range estimation for better 3D reconstruction. The outcome demonstrated is of interest to various laser ranging applications and can be a reference for future works. PMID:28872589

Diminished auditory sensory gating during active auditory verbal hallucinations.

PubMed

Thoma, Robert J; Meier, Andrew; Houck, Jon; Clark, Vincent P; Lewine, Jeffrey D; Turner, Jessica; Calhoun, Vince; Stephen, Julia

2017-10-01

Auditory sensory gating, assessed in a paired-click paradigm, indicates the extent to which incoming stimuli are filtered, or "gated", in auditory cortex. Gating is typically computed as the ratio of the peak amplitude of the event related potential (ERP) to a second click (S2) divided by the peak amplitude of the ERP to a first click (S1). Higher gating ratios are purportedly indicative of incomplete suppression of S2 and considered to represent sensory processing dysfunction. In schizophrenia, hallucination severity is positively correlated with gating ratios, and it was hypothesized that a failure of sensory control processes early in auditory sensation (gating) may represent a larger system failure within the auditory data stream; resulting in auditory verbal hallucinations (AVH). EEG data were collected while patients (N=12) with treatment-resistant AVH pressed a button to indicate the beginning (AVH-on) and end (AVH-off) of each AVH during a paired click protocol. For each participant, separate gating ratios were computed for the P50, N100, and P200 components for each of the AVH-off and AVH-on states. AVH trait severity was assessed using the Psychotic Symptoms Rating Scales AVH Total score (PSYRATS). The results of a mixed model ANOVA revealed an overall effect for AVH state, such that gating ratios were significantly higher during the AVH-on state than during AVH-off for all three components. PSYRATS score was significantly and negatively correlated with N100 gating ratio only in the AVH-off state. These findings link onset of AVH with a failure of an empirically-defined auditory inhibition system, auditory sensory gating, and pave the way for a sensory gating model of AVH. Copyright © 2017 Elsevier B.V. All rights reserved.

Error-Transparent Quantum Gates for Small Logical Qubit Architectures

NASA Astrophysics Data System (ADS)

Kapit, Eliot

2018-02-01

One of the largest obstacles to building a quantum computer is gate error, where the physical evolution of the state of a qubit or group of qubits during a gate operation does not match the intended unitary transformation. Gate error stems from a combination of control errors and random single qubit errors from interaction with the environment. While great strides have been made in mitigating control errors, intrinsic qubit error remains a serious problem that limits gate fidelity in modern qubit architectures. Simultaneously, recent developments of small error-corrected logical qubit devices promise significant increases in logical state lifetime, but translating those improvements into increases in gate fidelity is a complex challenge. In this Letter, we construct protocols for gates on and between small logical qubit devices which inherit the parent device's tolerance to single qubit errors which occur at any time before or during the gate. We consider two such devices, a passive implementation of the three-qubit bit flip code, and the author's own [E. Kapit, Phys. Rev. Lett. 116, 150501 (2016), 10.1103/PhysRevLett.116.150501] very small logical qubit (VSLQ) design, and propose error-tolerant gate sets for both. The effective logical gate error rate in these models displays superlinear error reduction with linear increases in single qubit lifetime, proving that passive error correction is capable of increasing gate fidelity. Using a standard phenomenological noise model for superconducting qubits, we demonstrate a realistic, universal one- and two-qubit gate set for the VSLQ, with error rates an order of magnitude lower than those for same-duration operations on single qubits or pairs of qubits. These developments further suggest that incorporating small logical qubits into a measurement based code could substantially improve code performance.

Possibility of transforming the electronic structure of one species of graphene adatoms into that of another by application of gate voltage: First-principles calculations

NASA Astrophysics Data System (ADS)

Chan, Kevin T.; Lee, Hoonkyung; Cohen, Marvin L.

2011-10-01

Graphene provides many advantages for controlling the electronic structure of adatoms and other adsorbates via gating. Using the projected density of states and charge density obtained from first-principles density-functional periodic supercell calculations, we investigate the possibility of performing “alchemy” of adatoms on graphene, i.e., transforming the electronic structure of one species of adatom into that of another species by application of a gate voltage. Gating is modeled as a change in the number of electrons in the unit cell, with the inclusion of a compensating uniform background charge. Within this model and the generalized gradient approximation to the exchange-correlation functional, we find that such transformations are possible for K, Ca, and several transition-metal adatoms. Gate control of the occupation of the p states of In on graphene is also investigated. The validity of the supercell approximation with uniform compensating charge and the model for exchange and correlation is also discussed.

Power-Law Dynamics of Membrane Conductances Increase Spiking Diversity in a Hodgkin-Huxley Model.

PubMed

Teka, Wondimu; Stockton, David; Santamaria, Fidel

2016-03-01

We studied the effects of non-Markovian power-law voltage dependent conductances on the generation of action potentials and spiking patterns in a Hodgkin-Huxley model. To implement slow-adapting power-law dynamics of the gating variables of the potassium, n, and sodium, m and h, conductances we used fractional derivatives of order η≤1. The fractional derivatives were used to solve the kinetic equations of each gate. We systematically classified the properties of each gate as a function of η. We then tested if the full model could generate action potentials with the different power-law behaving gates. Finally, we studied the patterns of action potential that emerged in each case. Our results show the model produces a wide range of action potential shapes and spiking patterns in response to constant current stimulation as a function of η. In comparison with the classical model, the action potential shapes for power-law behaving potassium conductance (n gate) showed a longer peak and shallow hyperpolarization; for power-law activation of the sodium conductance (m gate), the action potentials had a sharp rise time; and for power-law inactivation of the sodium conductance (h gate) the spikes had wider peak that for low values of η replicated pituitary- and cardiac-type action potentials. With all physiological parameters fixed a wide range of spiking patterns emerged as a function of the value of the constant input current and η, such as square wave bursting, mixed mode oscillations, and pseudo-plateau potentials. Our analyses show that the intrinsic memory trace of the fractional derivative provides a negative feedback mechanism between the voltage trace and the activity of the power-law behaving gate variable. As a consequence, power-law behaving conductances result in an increase in the number of spiking patterns a neuron can generate and, we propose, expand the computational capacity of the neuron.

Remediation of transuranic-contaminated coral soil at Johnston Atoll using the segmented gate system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bramlitt, E.; Johnson, N.

1994-12-31

Thermo Analytical, Inc. (TMA) has developed a system to remove clean soil from contaminated soil. The system consists of a soil conveyor, an array of radiation detectors toward the conveyor feed end, a gate assembly at the conveyor discharge end, and two additional conveyors which move discharged soil to one or another paths. The gate assembly is as wide as the ``sorter conveyor,`` and it has eight individual gates or segments. The segments automatically open or close depending on the amount of radioactivity present. In one position they pass soil to a clean soil conveyor, and in the other positionmore » they let soil fall to a hot soil conveyor. The soil sorting process recovers clean soil for beneficial use and it substantially reduces the quantity of soil which must be decontaminated or prepared for waste disposal. The Segmented Gate System (SGS) was developed for the cleanup of soil contaminated with some transuranium elements at Johnston Atoll. It has proven to be an effective means for recovering clean soil and verifying that soil is clean, minimizing the quantity of truly contaminated soil, and providing measures of contamination for waste transport and disposal. TMA is constructing a small, transportable soil cleanup as it is confident the SGS technology can be adapted to soils and contaminants other than those at Johnston Atoll. It will use this transportable plant to demonstrate the technology and to develop site specific parameters for use in designing plants to meet cleanup needs.« less

Feedback-tuned, noise resilient gates for encoded spin qubits

NASA Astrophysics Data System (ADS)

Bluhm, Hendrik

Spin 1/2 particles form native two level systems and thus lend themselves as a natural qubit implementation. However, encoding a single qubit in several spins entails benefits, such as reducing the resources necessary for qubit control and protection from certain decoherence channels. While several varieties of such encoded spin qubits have been implemented, accurate control remains challenging, and leakage out of the subspace of valid qubit states is a potential issue. Optimal performance typically requires large pulse amplitudes for fast control, which is prone to systematic errors and prohibits standard control approaches based on Rabi flopping. Furthermore, the exchange interaction typically used to electrically manipulate encoded spin qubits is inherently sensitive to charge noise. I will discuss all-electrical, high-fidelity single qubit operations for a spin qubit encoded in two electrons in a GaAs double quantum dot. Starting from a set of numerically optimized control pulses, we employ an iterative tuning procedure based on measured error syndromes to remove systematic errors.Randomized benchmarking yields an average gate fidelity exceeding 98 % and a leakage rate into invalid states of 0.2 %. These gates exhibit a certain degree of resilience to both slow charge and nuclear spin fluctuations due to dynamical correction analogous to a spin echo. Furthermore, the numerical optimization minimizes the impact of fast charge noise. Both types of noise make relevant contributions to gate errors. The general approach is also adaptable to other qubit encodings and exchange based two-qubit gates.

The gating mechanism of the large mechanosensitive channel MscL

NASA Technical Reports Server (NTRS)

Sukharev, S.; Betanzos, M.; Chiang, C. S.; Guy, H. R.

2001-01-01

The mechanosensitive channel of large conductance, MscL, is a ubiquitous membrane-embedded valve involved in turgor regulation in bacteria. The crystal structure of MscL from Mycobacterium tuberculosis provides a starting point for analysing molecular mechanisms of tension-dependent channel gating. Here we develop structural models in which a cytoplasmic gate is formed by a bundle of five amino-terminal helices (S1), previously unresolved in the crystal structure. When membrane tension is applied, the transmembrane barrel expands and pulls the gate apart through the S1-M1 linker. We tested these models by substituting cysteines for residues predicted to be near each other only in either the closed or open conformation. Our results demonstrate that S1 segments form the bundle when the channel is closed, and crosslinking between S1 segments prevents opening. S1 segments interact with M2 when the channel is open, and crosslinking of S1 to M2 impedes channel closing. Gating is affected by the length of the S1-M1 linker in a manner consistent with the model, revealing critical spatial relationships between the domains that transmit force from the lipid bilayer to the channel gate.

Impact of negative capacitance effect on Germanium Double Gate pFET for enhanced immunity to interface trap charges

NASA Astrophysics Data System (ADS)

Bansal, Monika; Kaur, Harsupreet

2018-05-01

In this work, a comprehensive drain current model has been developed for long channel Negative Capacitance Germanium Double Gate p-type Field Effect Transistor (NCGe-DG-pFET) by using 1-D Poisson's equation and Landau-Khalatnikov equation. The model takes into account interface trap charges and by using the derived model various parameters such as surface potential, gain, gate capacitance, subthreshold swing, drain current, transconductance, output conductance and Ion/Ioff ratio have been obtained and it is demonstrated that by incorporating ferroelectric material as gate insulator with Ge-channel, subthreshold swing values less than 60 mV/dec can be achieved along with improved gate controllability and current drivability. Further, to critically analyze the advantages offered by NCGe-DG-pFET, a detailed comparison has been done with Germanium Double Gate p-type Field Effect Transistor (Ge-DG-pFET) and it is shown that NCGe-DG-pFET exhibits high gain, enhanced transport efficiency in channel, very less or negligible degradation in device characteristics due to interface trap charges as compared to Ge-DG-pFET. The analytical results so obtained show good agreement with simulated results obtained from Silvaco ATLAS TCAD tool.

Analytical model of threshold voltage degradation due to localized charges in gate material engineered Schottky barrier cylindrical GAA MOSFETs

NASA Astrophysics Data System (ADS)

Kumar, Manoj; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

2016-10-01

The threshold voltage degradation due to the hot carrier induced localized charges (LC) is a major reliability concern for nanoscale Schottky barrier (SB) cylindrical gate all around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs). The degradation physics of gate material engineered (GME)-SB-GAA MOSFETs due to LC is still unexplored. An explicit threshold voltage degradation model for GME-SB-GAA-MOSFETs with the incorporation of localized charges (N it) is developed. To accurately model the threshold voltage the minimum channel carrier density has been taken into account. The model renders how +/- LC affects the device subthreshold performance. One-dimensional (1D) Poisson’s and 2D Laplace equations have been solved for two different regions (fresh and damaged) with two different gate metal work-functions. LCs are considered at the drain side with low gate metal work-function as N it is more vulnerable towards the drain. For the reduction of carrier mobility degradation, a lightly doped channel has been considered. The proposed model also includes the effect of barrier height lowering at the metal-semiconductor interface. The developed model results have been verified using numerical simulation data obtained by the ATLAS-3D device simulator and excellent agreement is observed between analytical and simulation results.

Glutamate receptor-channel gating. Maximum likelihood analysis of gigaohm seal recordings from locust muscle.

PubMed Central

Bates, S E; Sansom, M S; Ball, F G; Ramsey, R L; Usherwood, P N

1990-01-01

Gigaohm recordings have been made from glutamate receptor channels in excised, outside-out patches of collagenase-treated locust muscle membrane. The channels in the excised patches exhibit the kinetic state switching first seen in megaohm recordings from intact muscle fibers. Analysis of channel dwell time distributions reveals that the gating mechanism contains at least four open states and at least four closed states. Dwell time autocorrelation function analysis shows that there are at least three gateways linking the open states of the channel with the closed states. A maximum likelihood procedure has been used to fit six different gating models to the single channel data. Of these models, a cooperative model yields the best fit, and accurately predicts most features of the observed channel gating kinetics. PMID:1696510

A MODFET dc model with improved pinchoff and saturation characteristics

NASA Astrophysics Data System (ADS)

Rohdin, Hans; Roblin, Patrick

1986-05-01

An improved analytical dc model for the MODFET is proposed which uses a new approximation of the two-dimensional electron gas concentration versus gate-to-channel voltage, a ratio which models both the subthreshold region and the gradual saturation of carriers due to the onset of AlGaAs charge modulation. A two-region Grebene-Ghandi model with a floating boundary is used for the channel. A maximum transconductance and a finite intrinsic output conductance in the saturated region are predicted, in agreement with experimental observations. The model is shown to approach the saturated velocity model in the limit of very short gate lengths, and to approach the classical gradual channel model in the limit of very long gate lengths.

Niflumic acid alters gating of HCN2 pacemaker channels by interaction with the outer region of S4 voltage sensing domains.

PubMed

Cheng, Lan; Sanguinetti, Michael C

2009-05-01

Niflumic acid, 2-[[3-(trifluoromethyl)phenyl]amino]pyridine-3-carboxylic acid (NFA), is a nonsteroidal anti-inflammatory drug that also blocks or modifies the gating of many ion channels. Here, we investigated the effects of NFA on hyperpolarization-activated cyclic nucleotide-gated cation (HCN) pacemaker channels expressed in X. laevis oocytes using site-directed mutagenesis and the two-electrode voltage-clamp technique. Extracellular NFA acted rapidly and caused a slowing of activation and deactivation and a hyperpolarizing shift in the voltage dependence of HCN2 channel activation (-24.5 +/- 1.2 mV at 1 mM). Slowed channel gating and reduction of current magnitude was marked in oocytes treated with NFA, while clamped at 0 mV but minimal in oocytes clamped at -100 mV, indicating the drug preferentially interacts with channels in the closed state. NFA at 0.1 to 3 mM shifted the half-point for channel activation in a concentration-dependent manner, with an EC(50) of 0.54 +/- 0.068 mM and a predicted maximum shift of -38 mV. NFA at 1 mM also reduced maximum HCN2 conductance by approximately 20%, presumably by direct block of the pore. The rapid onset and state-dependence of NFA-induced changes in channel gating suggests an interaction with the extracellular region of the S4 transmembrane helix, the primary voltage-sensing domain of HCN2. Neutralization (by mutation to Gln) of any three of the outer four basic charged residues in S4, but not single mutations, abrogated the NFA-induced shift in channel activation. We conclude that NFA alters HCN2 gating by interacting with the extracellular end of the S4 voltage sensor domains.

Push the flash floating gate memories toward the future low energy application

NASA Astrophysics Data System (ADS)

Della Marca, V.; Just, G.; Regnier, A.; Ogier, J.-L.; Simola, R.; Niel, S.; Postel-Pellerin, J.; Lalande, F.; Masoero, L.; Molas, G.

2013-01-01

In this paper the energy consumption of flash floating gate cell, during a channel hot electron operation, is investigated. We characterize the device using different ramp and box pulses on control gate, to find the best solution to have low energy consumption and good cell performances. We use a new dynamic method to measure the drain current absorption in order to evaluate the impact of different bias conditions, and to study the cell behavior. The programming window and the energy consumption are considered as fundamental parameters. Using this dynamic technique, three zones of work are found; it is possible to optimize the drain voltage during the programming operation to minimize the energy consumption. Moreover, the cell's performances are improved using the CHISEL effect, with a reverse body bias. After the study concerning the programming pulses adjusting, we show the results obtained by increasing the channel doping dose parameter. Considering a channel hot electron programming operation, it is important to focus our attention on the bitline leakage consumption contribution. We measured it for the unselected bitline cells, and we show the effects of the lightly doped drain implantation energy on the leakage current. In this way the impact of gate induced drain leakage in band-to-band tunneling regime decreases, improving the cell's performances in a memory array.

Effect of laser pulse shaping parameters on the fidelity of quantum logic gates.

PubMed

Zaari, Ryan R; Brown, Alex

2012-09-14

The effect of varying parameters specific to laser pulse shaping instruments on resulting fidelities for the ACNOT(1), NOT(2), and Hadamard(2) quantum logic gates are studied for the diatomic molecule (12)C(16)O. These parameters include varying the frequency resolution, adjusting the number of frequency components and also varying the amplitude and phase at each frequency component. A time domain analytic form of the original discretized frequency domain laser pulse function is derived, providing a useful means to infer the resulting pulse shape through variations to the aforementioned parameters. We show that amplitude variation at each frequency component is a crucial requirement for optimal laser pulse shaping, whereas phase variation provides minimal contribution. We also show that high fidelity laser pulses are dependent upon the frequency resolution and increasing the number of frequency components provides only a small incremental improvement to quantum gate fidelity. Analysis through use of the pulse area theorem confirms the resulting population dynamics for one or two frequency high fidelity laser pulses and implies similar dynamics for more complex laser pulse shapes. The ability to produce high fidelity laser pulses that provide both population control and global phase alignment is attributed greatly to the natural evolution phase alignment of the qubits involved within the quantum logic gate operation.

Inhomogeneous screening of gate electric field by interface states in graphene FETs

NASA Astrophysics Data System (ADS)

Singh, Anil Kumar; Gupta, Anjan Kumar

2017-09-01

The electronic states at graphene-SiO2 interface and their inhomogeneity is investigated using the back-gate-voltage dependence of local tunnel spectra acquired with a scanning tunneling microscope. The conductance spectra show two, or occasionally three, minima that evolve along the bias-voltage axis with the back gate voltage. This evolution is modeled using tip-gating and interface states. The energy dependent interface states’ density, Dit(E) , required to model the back-gate evolution of the minima, is found to have significant inhomogeneity in its energy-width. A broad Dit(E) leads to an effect similar to a reduction in the Fermi velocity while the narrow Dit(E) leads to the pinning of the Fermi energy close to the Dirac point, as observed in some places, due to enhanced screening of the gate electric field by the narrow Dit(E) . Finally, this also demonstrates STM as a tool to probe the density of interface states in various 2D Dirac materials.

Cardiac-gated parametric images from 82 Rb PET from dynamic frames and direct 4D reconstruction.

PubMed

Germino, Mary; Carson, Richard E

2018-02-01

Cardiac perfusion PET data can be reconstructed as a dynamic sequence and kinetic modeling performed to quantify myocardial blood flow, or reconstructed as static gated images to quantify function. Parametric images from dynamic PET are conventionally not gated, to allow use of all events with lower noise. An alternative method for dynamic PET is to incorporate the kinetic model into the reconstruction algorithm itself, bypassing the generation of a time series of emission images and directly producing parametric images. So-called "direct reconstruction" can produce parametric images with lower noise than the conventional method because the noise distribution is more easily modeled in projection space than in image space. In this work, we develop direct reconstruction of cardiac-gated parametric images for 82 Rb PET with an extension of the Parametric Motion compensation OSEM List mode Algorithm for Resolution-recovery reconstruction for the one tissue model (PMOLAR-1T). PMOLAR-1T was extended to accommodate model terms to account for spillover from the left and right ventricles into the myocardium. The algorithm was evaluated on a 4D simulated 82 Rb dataset, including a perfusion defect, as well as a human 82 Rb list mode acquisition. The simulated list mode was subsampled into replicates, each with counts comparable to one gate of a gated acquisition. Parametric images were produced by the indirect (separate reconstructions and modeling) and direct methods for each of eight low-count and eight normal-count replicates of the simulated data, and each of eight cardiac gates for the human data. For the direct method, two initialization schemes were tested: uniform initialization, and initialization with the filtered iteration 1 result of the indirect method. For the human dataset, event-by-event respiratory motion compensation was included. The indirect and direct methods were compared for the simulated dataset in terms of bias and coefficient of variation as a function of iteration. Convergence of direct reconstruction was slow with uniform initialization; lower bias was achieved in fewer iterations by initializing with the filtered indirect iteration 1 images. For most parameters and regions evaluated, the direct method achieved the same or lower absolute bias at matched iteration as the indirect method, with 23%-65% lower noise. Additionally, the direct method gave better contrast between the perfusion defect and surrounding normal tissue than the indirect method. Gated parametric images from the human dataset had comparable relative performance of indirect and direct, in terms of mean parameter values per iteration. Changes in myocardial wall thickness and blood pool size across gates were readily visible in the gated parametric images, with higher contrast between myocardium and left ventricle blood pool in parametric images than gated SUV images. Direct reconstruction can produce parametric images with less noise than the indirect method, opening the potential utility of gated parametric imaging for perfusion PET. © 2017 American Association of Physicists in Medicine.

Programmable logic construction kits for hyper-real-time neuronal modeling.

PubMed

Guerrero-Rivera, Ruben; Morrison, Abigail; Diesmann, Markus; Pearce, Tim C

2006-11-01

Programmable logic designs are presented that achieve exact integration of leaky integrate-and-fire soma and dynamical synapse neuronal models and incorporate spike-time dependent plasticity and axonal delays. Highly accurate numerical performance has been achieved by modifying simpler forward-Euler-based circuitry requiring minimal circuit allocation, which, as we show, behaves equivalently to exact integration. These designs have been implemented and simulated at the behavioral and physical device levels, demonstrating close agreement with both numerical and analytical results. By exploiting finely grained parallelism and single clock cycle numerical iteration, these designs achieve simulation speeds at least five orders of magnitude faster than the nervous system, termed here hyper-real-time operation, when deployed on commercially available field-programmable gate array (FPGA) devices. Taken together, our designs form a programmable logic construction kit of commonly used neuronal model elements that supports the building of large and complex architectures of spiking neuron networks for real-time neuromorphic implementation, neurophysiological interfacing, or efficient parameter space investigations.

Self-aligned gated field emission devices using single carbon nanofiber cathodes

NASA Astrophysics Data System (ADS)

Guillorn, M. A.; Melechko, A. V.; Merkulov, V. I.; Hensley, D. K.; Simpson, M. L.; Lowndes, D. H.

2002-11-01

We report on the fabrication and operation of integrated gated field emission devices using single vertically aligned carbon nanofiber (VACNF) cathodes where the gate aperture has been formed using a self-aligned technique based on chemical mechanical polishing. We find that this method for producing gated cathode devices easily achieves structures with gate apertures on the order of 2 mum that show good concentric alignment to the VACNF emitter. The operation of these devices was explored and field emission characteristics that fit well to the Fowler-Nordheim model of emission was demonstrated.

Assessing psychosocial correlates of parental safety behaviour using Protection Motivation Theory: stair gate presence and use among parents of toddlers.

PubMed

Beirens, T M J; Brug, J; van Beeck, E F; Dekker, R; den Hertog, P; Raat, H

2008-08-01

Unintentional injury due to falls is one of the main reasons for hospitalization among children 0-4 years of age. The goal of this study was to assess the psychosocial correlates of parental safety behaviours to prevent falls from a staircase due to the lack of or the lack of adequate use of a stair gate. Data were collected from a cross-sectional survey using self-administered questionnaires mailed to a population sample of 2470 parents with toddlers. Associations between self-reported habits on the presence and use of stair gates and family and psychosocial factors were analysed, using descriptive statistics and multiple regression models, based on Protection Motivation Theory. The presence of stair gates was associated with family situation, perceived vulnerability, response efficacy, social norms and descriptive norms. The use of stair gates was associated with family situation, response efficacy, self-efficacy and perceived advantages of safe behaviour. The full model explained 32 and 24% of the variance in the presence of stair gates and the use of stair gates, respectively, indicating a large and medium effect size. Programmes promoting the presence and adequate use of stair gates should address the family situation, personal cognitive factors as well as social factors.

Assessing psychosocial correlates of parental safety behaviour using Protection Motivation Theory: stair gate presence and use among parents of toddlers

PubMed Central

Beirens, T. M. J.; Brug, J.; van Beeck, E. F.; Dekker, R.; den Hertog, P.; Raat, H.

2008-01-01

Unintentional injury due to falls is one of the main reasons for hospitalization among children 0–4 years of age. The goal of this study was to assess the psychosocial correlates of parental safety behaviours to prevent falls from a staircase due to the lack of or the lack of adequate use of a stair gate. Data were collected from a cross-sectional survey using self-administered questionnaires mailed to a population sample of 2470 parents with toddlers. Associations between self-reported habits on the presence and use of stair gates and family and psychosocial factors were analysed, using descriptive statistics and multiple regression models, based on Protection Motivation Theory. The presence of stair gates was associated with family situation, perceived vulnerability, response efficacy, social norms and descriptive norms. The use of stair gates was associated with family situation, response efficacy, self-efficacy and perceived advantages of safe behaviour. The full model explained 32 and 24% of the variance in the presence of stair gates and the use of stair gates, respectively, indicating a large and medium effect size. Programmes promoting the presence and adequate use of stair gates should address the family situation, personal cognitive factors as well as social factors. PMID:17947245

Mathematical Models of the Common-Source and Common-Gate Amplifiers using a Metal-Ferroelectric-Semiconductor Field effect Transistor

NASA Technical Reports Server (NTRS)

Hunt, Mitchell; Sayyah, Rana; Mitchell, Cody; Laws, Crystal; MacLeod, Todd C.; Ho, Fat D.

2013-01-01

Mathematical models of the common-source and common-gate amplifiers using metal-ferroelectric- semiconductor field effect transistors (MOSFETs) are developed in this paper. The models are compared against data collected with MOSFETs of varying channel lengths and widths, and circuit parameters such as biasing conditions are varied as well. Considerations are made for the capacitance formed by the ferroelectric layer present between the gate and substrate of the transistors. Comparisons between the modeled and measured data are presented in depth as well as differences and advantages as compared to the performance of each circuit using a MOSFET.

Size reduction techniques for vital compliant VHDL simulation models

DOEpatents

Rich, Marvin J.; Misra, Ashutosh

2006-08-01

A method and system select delay values from a VHDL standard delay file that correspond to an instance of a logic gate in a logic model. Then the system collects all the delay values of the selected instance and builds super generics for the rise-time and the fall-time of the selected instance. Then, the system repeats this process for every delay value in the standard delay file (310) that correspond to every instance of every logic gate in the logic model. The system then outputs a reduced size standard delay file (314) containing the super generics for every instance of every logic gate in the logic model.

Analytical Modeling of Triple-Metal Hetero-Dielectric DG SON TFET

NASA Astrophysics Data System (ADS)

Mahajan, Aman; Dash, Dinesh Kumar; Banerjee, Pritha; Sarkar, Subir Kumar

2018-02-01

In this paper, a 2-D analytical model of triple-metal hetero-dielectric DG TFET is presented by combining the concepts of triple material gate engineering and hetero-dielectric engineering. Three metals with different work functions are used as both front- and back gate electrodes to modulate the barrier at source/channel and channel/drain interface. In addition to this, front gate dielectric consists of high-K HfO2 at source end and low-K SiO2 at drain side, whereas back gate dielectric is replaced by air to further improve the ON current of the device. Surface potential and electric field of the proposed device are formulated solving 2-D Poisson's equation and Young's approximation. Based on this electric field expression, tunneling current is obtained by using Kane's model. Several device parameters are varied to examine the behavior of the proposed device. The analytical model is validated with TCAD simulation results for proving the accuracy of our proposed model.

Synthesis of large-area multilayer hexagonal boron nitride for high material performance

PubMed Central

Kim, Soo Min; Hsu, Allen; Park, Min Ho; Chae, Sang Hoon; Yun, Seok Joon; Lee, Joo Song; Cho, Dae-Hyun; Fang, Wenjing; Lee, Changgu; Palacios, Tomás; Dresselhaus, Mildred; Kim, Ki Kang; Lee, Young Hee; Kong, Jing

2015-01-01

Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young's modulus: 1.16±0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ∼24,000 cm2 V−1 s−1 at room temperature, higher than that (∼13,000 2 V−1 s−1) with exfoliated h-BN. By placing additional h-BN on a SiO2/Si substrate for a MoS2 (WSe2) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times. PMID:26507400

End-diastolic fractional flow reserve: comparison with conventional full-cardiac cycle fractional flow reserve.

PubMed

Chalyan, David A; Zhang, Zhang; Takarada, Shigeho; Molloi, Sabee

2014-02-01

Diastolic fractional flow reserve (dFFR) has been shown to be highly sensitive for detection of inducible myocardial ischemia. However, its reliance on measurement of left-ventricular pressure for zero-flow pressure correction, as well as manual extraction of the diastolic interval, has been its major limitation. Given previous reports of minimal zero-flow pressure at end-diastole, we compared instantaneous ECG-gated end-diastolic FFR with conventional full-cardiac cycle FFR and other diastolic indices in the porcine model. Measurements of FFR in the left anterior descending and left circumflex arteries were performed in an open-chest swine model with an external occluder device on the coronary artery used to produce varying degrees of epicardial stenosis. An ultrasound flow-probe that was placed proximal to the occluder measured absolute blood flow in ml/min, and it was used as a gold standard for FFR measurement. A total of 17 measurements at maximal hyperemia were acquired in 5 animals. Correlation coefficient between conventional mean hyperemic FFR with pressure-wire and directly measured FFR with flow-probe was 0.876 (standard error estimate=0.069; P<0.0001). The hyperemic end-diastolic FFR with pressure-wire correlated better with FFR measured directly with flow-probe (r=0.941, standard error estimate=0.050; P<0.0001). Instantaneous hyperemic ECG-gated FFR acquired at end-diastole, as compared with conventional full-cardiac cycle FFR, has an improved correlation with FFR measured directly with ultrasound flow-probe.

A 2D analytical cylindrical gate tunnel FET (CG-TFET) model: impact of shortest tunneling distance

NASA Astrophysics Data System (ADS)

Dash, S.; Mishra, G. P.

2015-09-01

A 2D analytical tunnel field-effect transistor (FET) potential model with cylindrical gate (CG-TFET) based on the solution of Laplace’s equation is proposed. The band-to-band tunneling (BTBT) current is derived by the help of lateral electric field and the shortest tunneling distance. However, the analysis is extended to obtain the subthreshold swing (SS) and transfer characteristics of the device. The dependency of drain current, SS and transconductance on gate voltage and shortest tunneling distance is discussed. Also, the effect of scaling the gate oxide thickness and the cylindrical body diameter on the electrical parameters of the device is analyzed.

Possibility designing XNOR and NAND molecular logic gates by using single benzene ring

NASA Astrophysics Data System (ADS)

Abbas, Mohammed A.; Hanoon, Falah H.; Al-Badry, Lafy F.

2017-09-01

This study focused on examining electronic transport through single benzene ring and suggested how such ring can be employed to design XNOR and NAND molecular logic gates. The single benzene ring was threaded by a magnetic flux. The magnetic flux and applied gate voltages were considered as the key tuning parameter in the XNOR and NAND gates operation. All the calculations are achieved by using steady-state theoretical model, which is based on the time-dependent Hamiltonian model. The transmission probability and the electric current are calculated as functions of electron energy and bias voltage, respectively. The application of the anticipated results can be a base for the progress of molecular electronics.

2-D modeling and analysis of short-channel behavior of a front high- K gate stack triple-material gate SB SON MOSFET

NASA Astrophysics Data System (ADS)

Banerjee, Pritha; Kumari, Tripty; Sarkar, Subir Kumar

2018-02-01

This paper presents the 2-D analytical modeling of a front high- K gate stack triple-material gate Schottky Barrier Silicon-On-Nothing MOSFET. Using the two-dimensional Poisson's equation and considering the popular parabolic potential approximation, expression for surface potential as well as the electric field has been considered. In addition, the response of the proposed device towards aggressive downscaling, that is, its extent of immunity towards the different short-channel effects, has also been considered in this work. The analytical results obtained have been validated using the simulated results obtained using ATLAS, a two-dimensional device simulator from SILVACO.

Advanced optical simulation of scintillation detectors in GATE V8.0: first implementation of a reflectance model based on measured data

NASA Astrophysics Data System (ADS)

Stockhoff, Mariele; Jan, Sebastien; Dubois, Albertine; Cherry, Simon R.; Roncali, Emilie

2017-06-01

Typical PET detectors are composed of a scintillator coupled to a photodetector that detects scintillation photons produced when high energy gamma photons interact with the crystal. A critical performance factor is the collection efficiency of these scintillation photons, which can be optimized through simulation. Accurate modelling of photon interactions with crystal surfaces is essential in optical simulations, but the existing UNIFIED model in GATE is often inaccurate, especially for rough surfaces. Previously a new approach for modelling surface reflections based on measured surfaces was validated using custom Monte Carlo code. In this work, the LUT Davis model is implemented and validated in GATE and GEANT4, and is made accessible for all users in the nuclear imaging research community. Look-up-tables (LUTs) from various crystal surfaces are calculated based on measured surfaces obtained by atomic force microscopy. The LUTs include photon reflection probabilities and directions depending on incidence angle. We provide LUTs for rough and polished surfaces with different reflectors and coupling media. Validation parameters include light output measured at different depths of interaction in the crystal and photon track lengths, as both parameters are strongly dependent on reflector characteristics and distinguish between models. Results from the GATE/GEANT4 beta version are compared to those from our custom code and experimental data, as well as the UNIFIED model. GATE simulations with the LUT Davis model show average variations in light output of  <2% from the custom code and excellent agreement for track lengths with R 2  >  0.99. Experimental data agree within 9% for relative light output. The new model also simplifies surface definition, as no complex input parameters are needed. The LUT Davis model makes optical simulations for nuclear imaging detectors much more precise, especially for studies with rough crystal surfaces. It will be available in GATE V8.0.

Structural basis of gating of CNG channels.

PubMed

Giorgetti, Alejandro; Nair, Anil V; Codega, Paolo; Torre, Vincent; Carloni, Paolo

2005-03-28

Cyclic nucleotide-gated (CNG) ion channels, underlying sensory transduction in vertebrate photoreceptors and olfactory sensory neurons, require cyclic nucleotides to open. Here, we present structural models of the tetrameric CNG channel pore from bovine rod in both open and closed states, as obtained by combining homology modeling-based techniques, experimentally derived spatial constraints and structural patterns present in the PDB database. Gating is initiated by an anticlockwise rotation of the N-terminal region of the C-linker, which is then, transmitted through the S6 transmembrane helices to the P-helix, and in turn from this to the pore lumen, which opens up from 2 to 5A thus allowing for ion permeation. The approach, here presented, is expected to provide a general methodology for model ion channels and their gating when structural templates are available and an extensive electrophysiological analysis has been performed.

Variability metrics in Josephson Junction fabrication for Quantum Computing circuits

NASA Astrophysics Data System (ADS)

Rosenblatt, Sami; Hertzberg, Jared; Brink, Markus; Chow, Jerry; Gambetta, Jay; Leng, Zhaoqi; Houck, Andrew; Nelson, J. J.; Plourde, Britton; Wu, Xian; Lake, Russell; Shainline, Jeff; Pappas, David; Patel, Umeshkumar; McDermott, Robert

Multi-qubit gates depend on the relative frequencies of the qubits. To reliably build multi-qubit devices therefore requires careful fabrication of Josephson junctions in order to precisely set their critical currents. The Ambegaokar-Baratoff relation between tunnel conductance and critical current implies a correlation between qubit frequency spread and tunnel junction resistance spread. Here we discuss measurement of large numbers of tunnel junctions to assess these resistance spreads, which can exceed 5% of mean resistance. With the goal of minimizing these spreads, we investigate process parameters such as lithographic junction area, evaporation and masking scheme, oxidation conditions, and substrate choice, as well as test environment, design and setup. In addition, trends of junction resistance with temperature are compared with theoretical models for further insights into process and test variability.

Study of Gaussian Doped Double Gate JunctionLess (GD-DG-JL) transistor including source drain depletion length: Model for sub-threshold behavior

NASA Astrophysics Data System (ADS)

Kumari, Vandana; Kumar, Ayush; Saxena, Manoj; Gupta, Mridula

2018-01-01

The sub-threshold model formulation of Gaussian Doped Double Gate JunctionLess (GD-DG-JL) FET including source/drain depletion length is reported in the present work under the assumption that the ungated regions are fully depleted. To provide deeper insight into the device performance, the impact of gaussian straggle, channel length, oxide and channel thickness and high-k gate dielectric has been studied using extensive TCAD device simulation.

Continuous-variable gate decomposition for the Bose-Hubbard model

NASA Astrophysics Data System (ADS)

Kalajdzievski, Timjan; Weedbrook, Christian; Rebentrost, Patrick

2018-06-01

In this work, we decompose the time evolution of the Bose-Hubbard model into a sequence of logic gates that can be implemented on a continuous-variable photonic quantum computer. We examine the structure of the circuit that represents this time evolution for one-dimensional and two-dimensional lattices. The elementary gates needed for the implementation are counted as a function of lattice size. We also include the contribution of the leading dipole interaction term which may be added to the Hamiltonian and its corresponding circuit.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petach, Trevor A.; Reich, Konstantin V.; Zhang, Xiao

Ionic liquid gating has a number of advantages over solid-state gating, especially for flexible or transparent devices and for applications requiring high carrier densities. But, the large number of charged ions near the channel inevitably results in Coulomb scattering, which limits the carrier mobility in otherwise clean systems. We develop a model for this Coulomb scattering. We then validate our model experimentally using ionic liquid gating of graphene across varying thicknesses of hexagonal boron nitride, demonstrating that disorder in the bulk ionic liquid often dominates the scattering.

REMOVAL OF TANK AND SEWER SEDIMENT BY GATE FLUSHING: COMPUTATIONAL FLUID DYNAMICS MODEL STUDIES

EPA Science Inventory

This presentation will discuss the application of a computational fluid dynamics 3D flow model to simulate gate flushing for removing tank/sewer sediments. The physical model of the flushing device was a tank fabricated and installed at the head-end of a hydraulic flume. The fl...

Barrier versus tilt exchange gate operations in spin-based quantum computing

NASA Astrophysics Data System (ADS)

Shim, Yun-Pil; Tahan, Charles

2018-04-01

We present a theory for understanding the exchange interaction between electron spins in neighboring quantum dots, either by changing the detuning of the two quantum dots or independently tuning the tunneling barrier between quantum dots. The Hubbard model and a more realistic confining-potential model are used to investigate how the tilting and barrier control affect the effective exchange coupling and thus the gate fidelity in both the detuning and symmetric regimes. We show that the exchange coupling is less sensitive to the charge noise through tunnel barrier control (while allowing for exchange coupling operations on a sweet spot where the exchange interaction has zero derivative with respect to the detuning). Both GaAs and Si quantum dots are considered, and we compare our results with experimental data showing qualitative agreements. Our results answer the open question of why barrier gates are preferable to tilt gates for exchange-based gate operations.

Controlling the layer localization of gapless states in bilayer graphene with a gate voltage

NASA Astrophysics Data System (ADS)

Jaskólski, W.; Pelc, M.; Bryant, Garnett W.; Chico, Leonor; Ayuela, A.

2018-04-01

Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their origin. We find that the gate potential controls the layer localization of the two states, which switches non-trivially between layers depending on the applied gate voltage magnitude. We also show how these bilayer gapless states arise from bands of single-layer graphene by analyzing the formation of carbon bonds between layers. Based on this analysis we provide a model Hamiltonian with analytical solutions, which explains the layer localization as a function of the ratio between the applied potential and interlayer hopping. Our results open a route for the manipulation of gapless states in electronic devices, analogous to the proposed writing and reading memories in topological insulators.

Raman scattering spectroscopy for explosives identification

NASA Astrophysics Data System (ADS)

Nagli, L.; Gaft, M.

2007-04-01

Real time detection and identification of explosives at a standoff distance is a major issue in efforts to develop defense against so-called Improvised Explosive Devices (IED). It is recognized that the only technique, which is potentially capable to standoff detection of minimal amounts of explosives is laser-based spectroscopy. LDS technique belongs to trace detection, namely to its micro-particles variety. We applied gated Raman and time-resolved luminescence spectroscopy for detection of main explosive materials, both factory and homemade. Raman system was developed and tested by LDS for field remote detection and identification of minimal amounts of explosives on relevant surfaces at a distance of up to 30 meters.

A neural network model of normal and abnormal auditory information processing.

PubMed

Du, X; Jansen, B H

2011-08-01

The ability of the brain to attenuate the response to irrelevant sensory stimulation is referred to as sensory gating. A gating deficiency has been reported in schizophrenia. To study the neural mechanisms underlying sensory gating, a neuroanatomically inspired model of auditory information processing has been developed. The mathematical model consists of lumped parameter modules representing the thalamus (TH), the thalamic reticular nucleus (TRN), auditory cortex (AC), and prefrontal cortex (PC). It was found that the membrane potential of the pyramidal cells in the PC module replicated auditory evoked potentials, recorded from the scalp of healthy individuals, in response to pure tones. Also, the model produced substantial attenuation of the response to the second of a pair of identical stimuli, just as seen in actual human experiments. We also tested the viewpoint that schizophrenia is associated with a deficit in prefrontal dopamine (DA) activity, which would lower the excitatory and inhibitory feedback gains in the AC and PC modules. Lowering these gains by less than 10% resulted in model behavior resembling the brain activity seen in schizophrenia patients, and replicated the reported gating deficits. The model suggests that the TRN plays a critical role in sensory gating, with the smaller response to a second tone arising from a reduction in inhibition of TH by the TRN. Copyright © 2011 Elsevier Ltd. All rights reserved.

Influence of target reflection on three-dimensional range gated reconstruction.

PubMed

Chua, Sing Yee; Wang, Xin; Guo, Ningqun; Tan, Ching Seong

2016-08-20

The range gated technique is a promising laser ranging method that is widely used in different fields such as surveillance, industry, and military. In a range gated system, a reflected laser pulse returned from the target scene contains key information for range reconstruction, which directly affects the system performance. Therefore, it is necessary to study the characteristics and effects of the target reflection factor. In this paper, theoretical and experimental analyses are performed to investigate the influence of target reflection on three-dimensional (3D) range gated reconstruction. Based on laser detection and ranging (LADAR) and bidirectional reflection distribution function (BRDF) theory, a 3D range gated reconstruction model is derived and the effect on range accuracy is analyzed from the perspectives of target surface reflectivity and angle of laser incidence. Our theoretical and experimental study shows that the range accuracy is proportional to the target surface reflectivity, but it decreases when the angle of incidence increases to adhere to the BRDF model. The presented findings establish a comprehensive understanding of target reflection in 3D range gated reconstruction, which is of interest to various applications such as target recognition and object modeling. This paper provides a reference for future improvement to perform accurate range compensation or correction.

Top-gate organic depletion and inversion transistors with doped channel and injection contact

NASA Astrophysics Data System (ADS)

Liu, Xuhai; Kasemann, Daniel; Leo, Karl

2015-03-01

Organic field-effect transistors constitute a vibrant research field and open application perspectives in flexible electronics. For a commercial breakthrough, however, significant performance improvements are still needed, e.g., stable and high charge carrier mobility and on-off ratio, tunable threshold voltage, as well as integrability criteria such as n- and p-channel operation and top-gate architecture. Here, we show pentacene-based top-gate organic transistors operated in depletion and inversion regimes, realized by doping source and drain contacts as well as a thin layer of the transistor channel. By varying the doping concentration and the thickness of the doped channel, we control the position of the threshold voltage without degrading on-off ratio or mobility. Capacitance-voltage measurements show that an inversion channel can indeed be formed, e.g., an n-doped channel can be inverted to a p-type inversion channel with highly p-doped contacts. The Cytop polymer dielectric minimizes hysteresis, and the transistors can be biased for prolonged cycles without a shift of threshold voltage, indicating excellent operation stability.

Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme

NASA Astrophysics Data System (ADS)

Lizzit, D.; Badami, O.; Specogna, R.; Esseni, D.

2017-06-01

We present a new model for surface roughness (SR) scattering in n-type multi-gate FETs (MuGFETs) and gate-all-around nanowire FETs with fairly arbitrary cross-sections, its implementation in a complete device simulator, and the validation against experimental electron mobility data. The model describes the SR scattering matrix elements as non-linear transformations of interface fluctuations, which strongly influences the root mean square value of the roughness required to reproduce experimental mobility data. Mobility simulations are performed via the deterministic solution of the Boltzmann transport equation for a 1D-electron gas and including the most relevant scattering mechanisms for electronic transport, such as acoustic, polar, and non-polar optical phonon scattering, Coulomb scattering, and SR scattering. Simulation results show the importance of accounting for arbitrary cross-sections and biasing conditions when compared to experimental data. We also discuss how mobility is affected by the shape of the cross-section as well as by its area in gate-all-around and tri-gate MuGFETs.

Application of stochastic automata networks for creation of continuous time Markov chain models of voltage gating of gap junction channels.

PubMed

Snipas, Mindaugas; Pranevicius, Henrikas; Pranevicius, Mindaugas; Pranevicius, Osvaldas; Paulauskas, Nerijus; Bukauskas, Feliksas F

2015-01-01

The primary goal of this work was to study advantages of numerical methods used for the creation of continuous time Markov chain models (CTMC) of voltage gating of gap junction (GJ) channels composed of connexin protein. This task was accomplished by describing gating of GJs using the formalism of the stochastic automata networks (SANs), which allowed for very efficient building and storing of infinitesimal generator of the CTMC that allowed to produce matrices of the models containing a distinct block structure. All of that allowed us to develop efficient numerical methods for a steady-state solution of CTMC models. This allowed us to accelerate CPU time, which is necessary to solve CTMC models, ~20 times.

2D Quantum Transport Modeling in Nanoscale MOSFETs

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan

2001-01-01

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density- gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Quantum simulations are focused on MIT 25, 50 and 90 nm "well- tempered" MOSFETs and compared to classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are quantitatively consistent with I D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and sub-threshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Extracellular Zinc Ion Inhibits ClC-0 Chloride Channels by Facilitating Slow Gating

PubMed Central

Chen, Tsung-Yu

1998-01-01

Extracellular Zn2+ was found to reversibly inhibit the ClC-0 Cl− channel. The apparent on and off rates of the inhibition were highly temperature sensitive, suggesting an effect of Zn2+ on the slow gating (or inactivation) of ClC-0. In the absence of Zn2+, the rate of the slow-gating relaxation increased with temperature, with a Q10 of ∼37. Extracellular Zn2+ facilitated the slow-gating process at all temperatures, but the Q10 did not change. Further analysis of the rate constants of the slow-gating process indicates that the effect of Zn2+ is mostly on the forward rate (the rate of inactivation) rather than the backward rate (the rate of recovery from inactivation) of the slow gating. When ClC-0 is bound with Zn2+, the equilibrium constant of the slow-gating process is increased by ∼30-fold, reflecting a 30-fold higher Zn2+ affinity in the inactivated channel than in the open-state channel. As examined through a wide range of membrane potentials, Zn2+ inhibits the opening of the slow gate with equal potency at all voltages, suggesting that a two-state model is inadequate to describe the slow-gating transition. Following a model originally proposed by Pusch and co-workers (Pusch, M., U. Ludewig, and T.J. Jentsch. 1997. J. Gen. Physiol. 109:105–116), the effect of Zn2+ on the activation curve of the slow gate can be well described by adding two constraints: (a) the dissociation constant for Zn2+ binding to the open channel is 30 μM, and (b) the difference in entropy between the open state and the transition state of the slow-gating process is increased by 27 J/ mol/°K for the Zn2+-bound channel. These results together indicate that extracellular Zn2+ inhibits ClC-0 by facilitating the slow-gating process. PMID:9834141

Poster — Thur Eve — 46: Monte Carlo model of the Novalis Classic 6MV stereotactic linear accelerator using the GATE simulation platform

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wiebe, J; Department of Physics and Astronomy, University of Calgary, Calgary, AB; Ploquin, N

2014-08-15

Monte Carlo (MC) simulation is accepted as the most accurate method to predict dose deposition when compared to other methods in radiation treatment planning. Current dose calculation algorithms used for treatment planning can become inaccurate when small radiation fields and tissue inhomogeneities are present. At our centre the Novalis Classic linear accelerator (linac) is used for Stereotactic Radiosurgery (SRS). The first MC model to date of the Novalis Classic linac was developed at our centre using the Geant4 Application for Tomographic Emission (GATE) simulation platform. GATE is relatively new, open source MC software built from CERN's Geometry and Tracking 4more » (Geant4) toolkit. The linac geometry was modeled using manufacturer specifications, as well as in-house measurements of the micro MLC's. Among multiple model parameters, the initial electron beam was adjusted so that calculated depth dose curves agreed with measured values. Simulations were run on the European Grid Infrastructure through GateLab. Simulation time is approximately 8 hours on GateLab for a complete head model simulation to acquire a phase space file. Current results have a majority of points within 3% of the measured dose values for square field sizes ranging from 6×6 mm{sup 2} to 98×98 mm{sup 2} (maximum field size on the Novalis Classic linac) at 100 cm SSD. The x-ray spectrum was determined from the MC data as well. The model provides an investigation into GATE'S capabilities and has the potential to be used as a research tool and an independent dose calculation engine for clinical treatment plans.« less

Development of process parameters for 22 nm PMOS using 2-D analytical modeling

NASA Astrophysics Data System (ADS)

Maheran, A. H. Afifah; Menon, P. S.; Ahmad, I.; Shaari, S.; Faizah, Z. A. Noor

2015-04-01

The complementary metal-oxide-semiconductor field effect transistor (CMOSFET) has become major challenge to scaling and integration. Innovation in transistor structures and integration of novel materials are necessary to sustain this performance trend. CMOS variability in the scaling technology becoming very important concern due to limitation of process control; over statistically variability related to the fundamental discreteness and materials. Minimizing the transistor variation through technology optimization and ensuring robust product functionality and performance is the major issue.In this article, the continuation study on process parameters variations is extended and delivered thoroughly in order to achieve a minimum leakage current (ILEAK) on PMOS planar transistor at 22 nm gate length. Several device parameters are varies significantly using Taguchi method to predict the optimum combination of process parameters fabrication. A combination of high permittivity material (high-k) and metal gate are utilized accordingly as gate structure where the materials include titanium dioxide (TiO2) and tungsten silicide (WSix). Then the L9 of the Taguchi Orthogonal array is used to analyze the device simulation where the results of signal-to-noise ratio (SNR) of Smaller-the-Better (STB) scheme are studied through the percentage influences of the process parameters. This is to achieve a minimum ILEAK where the maximum predicted ILEAK value by International Technology Roadmap for Semiconductors (ITRS) 2011 is said to should not above 100 nA/µm. Final results shows that the compensation implantation dose acts as the dominant factor with 68.49% contribution in lowering the device's leakage current. The absolute process parameters combination results in ILEAK mean value of 3.96821 nA/µm where is far lower than the predicted value.

Development of process parameters for 22 nm PMOS using 2-D analytical modeling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maheran, A. H. Afifah; Menon, P. S.; Shaari, S.

2015-04-24

The complementary metal-oxide-semiconductor field effect transistor (CMOSFET) has become major challenge to scaling and integration. Innovation in transistor structures and integration of novel materials are necessary to sustain this performance trend. CMOS variability in the scaling technology becoming very important concern due to limitation of process control; over statistically variability related to the fundamental discreteness and materials. Minimizing the transistor variation through technology optimization and ensuring robust product functionality and performance is the major issue.In this article, the continuation study on process parameters variations is extended and delivered thoroughly in order to achieve a minimum leakage current (I{sub LEAK}) onmore » PMOS planar transistor at 22 nm gate length. Several device parameters are varies significantly using Taguchi method to predict the optimum combination of process parameters fabrication. A combination of high permittivity material (high-k) and metal gate are utilized accordingly as gate structure where the materials include titanium dioxide (TiO{sub 2}) and tungsten silicide (WSi{sub x}). Then the L9 of the Taguchi Orthogonal array is used to analyze the device simulation where the results of signal-to-noise ratio (SNR) of Smaller-the-Better (STB) scheme are studied through the percentage influences of the process parameters. This is to achieve a minimum I{sub LEAK} where the maximum predicted I{sub LEAK} value by International Technology Roadmap for Semiconductors (ITRS) 2011 is said to should not above 100 nA/µm. Final results shows that the compensation implantation dose acts as the dominant factor with 68.49% contribution in lowering the device’s leakage current. The absolute process parameters combination results in I{sub LEAK} mean value of 3.96821 nA/µm where is far lower than the predicted value.« less

Impact of Behavioral Control on the Processing of Nociceptive Stimulation

PubMed Central

Grau, James W.; Huie, J. Russell; Garraway, Sandra M.; Hook, Michelle A.; Crown, Eric D.; Baumbauer, Kyle M.; Lee, Kuan H.; Hoy, Kevin C.; Ferguson, Adam R.

2012-01-01

How nociceptive signals are processed within the spinal cord, and whether these signals lead to behavioral signs of neuropathic pain, depends upon their relation to other events and behavior. Our work shows that these relations can have a lasting effect on spinal plasticity, inducing a form of learning that alters the effect of subsequent nociceptive stimuli. The capacity of lower spinal systems to adapt, in the absence of brain input, is examined in spinally transected rats that receive a nociceptive shock to the tibialis anterior muscle of one hind leg. If shock is delivered whenever the leg is extended (controllable stimulation), it induces an increase in flexion duration that minimizes net shock exposure. This learning is not observed in subjects that receive the same amount of shock independent of leg position (uncontrollable stimulation). These two forms of stimulation have a lasting, and divergent, effect on subsequent learning: controllable stimulation enables learning whereas uncontrollable stimulation disables it (learning deficit). Uncontrollable stimulation also enhances mechanical reactivity. We review evidence that training with controllable stimulation engages a brain-derived neurotrophic factor (BDNF)-dependent process that can both prevent and reverse the consequences of uncontrollable shock. We relate these effects to changes in BDNF protein and TrkB signaling. Controllable stimulation is also shown to counter the effects of peripheral inflammation (from intradermal capsaicin). A model is proposed that assumes nociceptive input is gated at an early sensory stage. This gate is sensitive to current environmental relations (between proprioceptive and nociceptive input), allowing stimulation to be classified as controllable or uncontrollable. We further propose that the status of this gate is affected by past experience and that a history of uncontrollable stimulation will promote the development of neuropathic pain. PMID:22934018

Experimental demonstration of cheap and accurate phase estimation

NASA Astrophysics Data System (ADS)

Rudinger, Kenneth; Kimmel, Shelby; Lobser, Daniel; Maunz, Peter

We demonstrate experimental implementation of robust phase estimation (RPE) to learn the phases of X and Y rotations on a trapped Yb+ ion qubit.. Unlike many other phase estimation protocols, RPE does not require ancillae nor near-perfect state preparation and measurement operations. Additionally, its computational requirements are minimal. Via RPE, using only 352 experimental samples per phase, we estimate phases of implemented gates with errors as small as 10-4 radians, as validated using gate set tomography. We also demonstrate that these estimates exhibit Heisenberg scaling in accuracy. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

Real-time field programmable gate array architecture for computer vision

NASA Astrophysics Data System (ADS)

Arias-Estrada, Miguel; Torres-Huitzil, Cesar

2001-01-01

This paper presents an architecture for real-time generic convolution of a mask and an image. The architecture is intended for fast low-level image processing. The field programmable gate array (FPGA)-based architecture takes advantage of the availability of registers in FPGAs to implement an efficient and compact module to process the convolutions. The architecture is designed to minimize the number of accesses to the image memory and it is based on parallel modules with internal pipeline operation in order to improve its performance. The architecture is prototyped in a FPGA, but it can be implemented on dedicated very- large-scale-integrated devices to reach higher clock frequencies. Complexity issues, FPGA resources utilization, FPGA limitations, and real-time performance are discussed. Some results are presented and discussed.

Single calcium channel domain gating of synaptic vesicle fusion at fast synapses; analysis by graphic modeling

PubMed Central

Stanley, Elise F

2015-01-01

At fast-transmitting presynaptic terminals Ca2+ enter through voltage gated calcium channels (CaVs) and bind to a synaptic vesicle (SV) -associated calcium sensor (SV-sensor) to gate fusion and discharge. An open CaV generates a high-concentration plume, or nanodomain of Ca2+ that dissipates precipitously with distance from the pore. At most fast synapses, such as the frog neuromuscular junction (NMJ), the SV sensors are located sufficiently close to individual CaVs to be gated by single nanodomains. However, at others, such as the mature rodent calyx of Held (calyx of Held), the physiology is more complex with evidence that CaVs that are both close and distant from the SV sensor and it is argued that release is gated primarily by the overlapping Ca2+ nanodomains from many CaVs. We devised a 'graphic modeling' method to sum Ca2+ from individual CaVs located at varying distances from the SV-sensor to determine the SV release probability and also the fraction of that probability that can be attributed to single domain gating. This method was applied first to simplified, low and high CaV density model release sites and then to published data on the contrasting frog NMJ and the rodent calyx of Held native synapses. We report 3 main predictions: the SV-sensor is positioned very close to the point at which the SV fuses with the membrane; single domain-release gating predominates even at synapses where the SV abuts a large cluster of CaVs, and even relatively remote CaVs can contribute significantly to single domain-based gating. PMID:26457441

Ryanodine receptor gating controls generation of diastolic calcium waves in cardiac myocytes

PubMed Central

Petrovič, Pavol; Valent, Ivan; Cocherová, Elena; Pavelková, Jana

2015-01-01

The role of cardiac ryanodine receptor (RyR) gating in the initiation and propagation of calcium waves was investigated using a mathematical model comprising a stochastic description of RyR gating and a deterministic description of calcium diffusion and sequestration. We used a one-dimensional array of equidistantly spaced RyR clusters, representing the confocal scanning line, to simulate the formation of calcium sparks. Our model provided an excellent description of the calcium dependence of the frequency of diastolic calcium sparks and of the increased tendency for the production of calcium waves after a decrease in cytosolic calcium buffering. We developed a hypothesis relating changes in the propensity to form calcium waves to changes of RyR gating and tested it by simulation. With a realistic RyR gating model, increased ability of RyR to be activated by Ca2+ strongly increased the propensity for generation of calcium waves at low (0.05–0.1-µM) calcium concentrations but only slightly at high (0.2–0.4-µM) calcium concentrations. Changes in RyR gating altered calcium wave formation by changing the calcium sensitivity of spontaneous calcium spark activation and/or the average number of open RyRs in spontaneous calcium sparks. Gating changes that did not affect RyR activation by Ca2+ had only a weak effect on the propensity to form calcium waves, even if they strongly increased calcium spark frequency. Calcium waves induced by modulating the properties of the RyR activation site could be suppressed by inhibiting the spontaneous opening of the RyR. These data can explain the increased tendency for production of calcium waves under conditions when RyR gating is altered in cardiac diseases. PMID:26009544

An Integrated Gate Turnaround Management Concept Leveraging Big Data/Analytics for NAS Performance Improvements

NASA Technical Reports Server (NTRS)

Chung, William; Chachad, Girish; Hochstetler, Ronald

2016-01-01

The Integrated Gate Turnaround Management (IGTM) concept was developed to improve the gate turnaround performance at the airport by leveraging relevant historical data to support optimization of airport gate operations, which include: taxi to the gate, gate services, push back, taxi to the runway, and takeoff, based on available resources, constraints, and uncertainties. By analyzing events of gate operations, primary performance dependent attributes of these events were identified for the historical data analysis such that performance models can be developed based on uncertainties to support descriptive, predictive, and prescriptive functions. A system architecture was developed to examine system requirements in support of such a concept. An IGTM prototype was developed to demonstrate the concept using a distributed network and collaborative decision tools for stakeholders to meet on time pushback performance under uncertainties.

The use of modeling and suspended sediment concentration measurements for quantifying net suspended sediment transport through a large tidally dominated inlet

USGS Publications Warehouse

Erikson, Li H.; Wright, Scott A.; Elias, Edwin; Hanes, Daniel M.; Schoellhamer, David H.; Largier, John; Barnard, P.L.; Jaffee, B.E.; Schoellhamer, D.H.

2013-01-01

Sediment exchange at large energetic inlets is often difficult to quantify due complex flows, massive amounts of water and sediment exchange, and environmental conditions limiting long-term data collection. In an effort to better quantify such exchange this study investigated the use of suspended sediment concentrations (SSC) measured at an offsite location as a surrogate for sediment exchange at the tidally dominated Golden Gate inlet in San Francisco, CA. A numerical model was calibrated and validated against water and suspended sediment flux measured during a spring–neap tide cycle across the Golden Gate. The model was then run for five months and net exchange was calculated on a tidal time-scale and compared to SSC measurements at the Alcatraz monitoring site located in Central San Francisco Bay ~ 5 km from the Golden Gate. Numerically modeled tide averaged flux across the Golden Gate compared well (r2 = 0.86, p-value

Diffusive flux in a model of stochastically gated oxygen transport in insect respiration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berezhkovskii, Alexander M.; Shvartsman, Stanislav Y.

Oxygen delivery to insect tissues is controlled by transport through a branched tubular network that is connected to the atmosphere by valve-like gates, known as spiracles. In certain physiological regimes, the spiracles appear to be randomly switching between open and closed states. Quantitative analysis of this regime leads a reaction-diffusion problem with stochastically switching boundary condition. We derive an expression for the diffusive flux at long times in this problem. Our approach starts with the derivation of the passage probability for a single particle that diffuses between a stochastically gated boundary, which models the opening and closing spiracle, and themore » perfectly absorbing boundary, which models oxygen absorption by the tissue. This passage probability is then used to derive an expression giving the diffusive flux as a function of the geometric parameters of the tube and characteristic time scales of diffusion and gate dynamics.« less

Diffusive flux in a model of stochastically gated oxygen transport in insect respiration.

PubMed

Berezhkovskii, Alexander M; Shvartsman, Stanislav Y

2016-05-28

Oxygen delivery to insect tissues is controlled by transport through a branched tubular network that is connected to the atmosphere by valve-like gates, known as spiracles. In certain physiological regimes, the spiracles appear to be randomly switching between open and closed states. Quantitative analysis of this regime leads a reaction-diffusion problem with stochastically switching boundary condition. We derive an expression for the diffusive flux at long times in this problem. Our approach starts with the derivation of the passage probability for a single particle that diffuses between a stochastically gated boundary, which models the opening and closing spiracle, and the perfectly absorbing boundary, which models oxygen absorption by the tissue. This passage probability is then used to derive an expression giving the diffusive flux as a function of the geometric parameters of the tube and characteristic time scales of diffusion and gate dynamics.

Designing 4H-SiC P-shielding trench gate MOSFET to optimize on-off electrical characteristics

NASA Astrophysics Data System (ADS)

Kyoung, Sinsu; Hong, Young-sung; Lee, Myung-hwan; Nam, Tae-jin

2018-02-01

In order to enhance specific on-resistance (Ron,sp), the trench gate structure was also introduced into 4H-SiC MOSFET as Si MOSFET. But the 4H-SiC trench gate has worse off-state characteristics than the Si trench gate due to the incomplete gate oxidation process (Šimonka et al., 2017). In order to overcome this problem, P-shielding trench gate MOSFET (TMOS) was proposed and researched in previous studies. But P-shielding has to be designed with minimum design rule in order to protect gate oxide effectively. P-shielding TMOS also has the drawback of on-state characteristics degradation corresponding to off state improvement for minimum design rule. Therefore optimized design is needed to satisfy both on and off characteristics. In this paper, the design parameters were analyzed and optimized so that the 4H-SiC P-shielding TMOS satisfies both on and off characteristics. Design limitations were proposed such that P-shielding is able to defend the gate oxide. The P-shielding layer should have the proper junction depth and concentration to defend the electric field to gate oxide during the off-state. However, overmuch P-shielding junction depth disturbs the on-state current flow, a problem which can be solved by increasing the trench depth. As trench depth increases, however, the breakdown voltage decreases. Therefore, trench depth should be designed with due consideration for on-off characteristics. For this, design conditions and modeling were proposed which allow P-shielding to operate without degradation of on-state characteristics. Based on this proposed model, the 1200 V 4H-SiC P-shielding trench gate MOSFET was designed and optimized.

Fabrication, testing and reliability modeling of copper/titanium-metallized GaAs MESFETs and HEMTs for low-noise applications

NASA Astrophysics Data System (ADS)

Feng, Ting

Today, GaAs based field effect transistors (FETs) have been used in a broad range of high-speed electronic military and commercial applications. However, their reliability still needs to be improved. Particularly the hydrogen induced degradation is a large remaining issue in the reliability of GaAs FETs, because hydrogen can easily be incorporated into devices during the crystal growth and virtually every device processing step. The main objective of this research work is to develop a new gate metallization system in order to reduce the hydrogen induced degradation from the gate region for GaAs based MESFETs and HEMTs. Cu/Ti gate metallization has been introduced into the GaAs MESFETs and HEMTs in our work in order to solve the hydrogen problem. The purpose of the use of copper is to tie up the hydrogen atoms and prevent hydrogen penetration into the device active region as well as to keep a low gate resistance for low noise applications. In this work, the fabrication technology of GaAs MESFETs and AlGaAs/GaAs HEMTs with Cu/Ti metallized gates have been successfully developed and the fabricated Cu/Ti FETs have shown comparable DC performance with similar Au-based GaAs FETs. The Cu/Ti FETs were subjected to temperature accelerated testing at NOT under 5% hydrogen forming gas and the experimental results show the hydrogen induced degradation has been reduced for the Cu/Ti FETs compared to commonly used AuPtTi based GaAs FETs. A long-term reliability testing for Cu/Ti FETs has also been carried out at 200°C and up to 1000hours and testing results show Cu/Ti FETs performed with adequate reliability. The failure modes were found to consist of a decrease in drain saturation current and pinch-off voltage and an increase in source ohmic contact resistance. Material characterization tools including Rutherford backscattering spectroscopy and a back etching technique were used in Cu/Ti GaAs FETs, and pronounced gate metal copper in-diffusion and intermixing compounds at the interface between the gate and GaAs channel layer were found. A quantifying gate sinking degradation model was developed in order to extend device physics models to reliability testing results of Cu/Ti GaAs FETs. The gate sinking degradation model includes the gate metal and hydrogen in-diffusion effect, decrease of effective channel due to the formation of interfacial compounds, decrease of electron mobility due to the increase of in-diffused impurities, and donor compensation from in-diffused metal impurity acceptors or hydrogen passivation. A variational charge control model was applied to simulate and understand the degradation mechanisms of Cu/Ti HEMTs, including hydrogen induced degradation due to the neutralization of donors. The degradation model established in this study is also applicable to other Au or Al metallized GaAs FETs for understanding the failure mechanisms induced by gate sinking and hydrogen neutralization of donors and con-elating the device physics model with reliability testing results.

Terahertz signal detection in a short gate length field-effect transistor with a two-dimensional electron gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vostokov, N. V., E-mail: vostokov@ipm.sci-nnov.ru; Shashkin, V. I.

2015-11-28

We consider the problem of non-resonant detection of terahertz signals in a short gate length field-effect transistor having a two-dimensional electron channel with zero external bias between the source and the drain. The channel resistance, gate-channel capacitance, and quadratic nonlinearity parameter of the transistor during detection as a function of the gate bias voltage are studied. Characteristics of detection of the transistor connected in an antenna with real impedance are analyzed. The consideration is based on both a simple one-dimensional model of the transistor and allowance for the two-dimensional distribution of the electric field in the transistor structure. The resultsmore » given by the different models are discussed.« less

A compact quantum correction model for symmetric double gate metal-oxide-semiconductor field-effect transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Edward Namkyu; Shin, Yong Hyeon; Yun, Ilgu, E-mail: iyun@yonsei.ac.kr

2014-11-07

A compact quantum correction model for a symmetric double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. The compact quantum correction model is proposed from the concepts of the threshold voltage shift (ΔV{sub TH}{sup QM}) and the gate capacitance (C{sub g}) degradation. First of all, ΔV{sub TH}{sup QM} induced by quantum mechanical (QM) effects is modeled. The C{sub g} degradation is then modeled by introducing the inversion layer centroid. With ΔV{sub TH}{sup QM} and the C{sub g} degradation, the QM effects are implemented in previously reported classical model and a comparison between the proposed quantum correction model and numerical simulationmore » results is presented. Based on the results, the proposed quantum correction model can be applicable to the compact model of DG MOSFET.« less

Experimental verification of electrostatic boundary conditions in gate-patterned quantum devices

NASA Astrophysics Data System (ADS)

Hou, H.; Chung, Y.; Rughoobur, G.; Hsiao, T. K.; Nasir, A.; Flewitt, A. J.; Griffiths, J. P.; Farrer, I.; Ritchie, D. A.; Ford, C. J. B.

2018-06-01

In a model of a gate-patterned quantum device, it is important to choose the correct electrostatic boundary conditions (BCs) in order to match experiment. In this study, we model gated-patterned devices in doped and undoped GaAs heterostructures for a variety of BCs. The best match is obtained for an unconstrained surface between the gates, with a dielectric region above it and a frozen layer of surface charge, together with a very deep back boundary. Experimentally, we find a  ∼0.2 V offset in pinch-off characteristics of 1D channels in a doped heterostructure before and after etching off a ZnO overlayer, as predicted by the model. Also, we observe a clear quantised current driven by a surface acoustic wave through a lateral induced n-i-n junction in an undoped heterostructure. In the model, the ability to pump electrons in this type of device is highly sensitive to the back BC. Using the improved boundary conditions, it is straightforward to model quantum devices quite accurately using standard software.

Impact of sea level rise on tide gate function.

PubMed

Walsh, Sean; Miskewitz, Robert

2013-01-01

Sea level rise resulting from climate change and land subsidence is expected to severely impact the duration and associated damage resulting from flooding events in tidal communities. These communities must continuously invest resources for the maintenance of existing structures and installation of new flood prevention infrastructure. Tide gates are a common flood prevention structure for low-lying communities in the tidal zone. Tide gates close during incoming tides to prevent inundation from downstream water propagating inland and open during outgoing tides to drain upland areas. Higher downstream mean sea level elevations reduce the effectiveness of tide gates by impacting the hydraulics of the system. This project developed a HEC-RAS and HEC-HMS model of an existing tide gate structure and its upland drainage area in the New Jersey Meadowlands to simulate the impact of rising mean sea level elevations on the tide gate's ability to prevent upstream flooding. Model predictions indicate that sea level rise will reduce the tide gate effectiveness resulting in longer lasting and deeper flood events. The results indicate that there is a critical point in the sea level elevation for this local area, beyond which flooding scenarios become dramatically worse and would have a significantly negative impact on the standard of living and ability to do business in one of the most densely populated areas of America.

Attention Gating in Short-Term Visual Memory.

ERIC Educational Resources Information Center

Reeves, Adam; Sperling, George

1986-01-01

An experiment is conducted showing that an attention shift to a stream of numerals presented in rapid serial visual presentation mode produces not a total loss, but a systematic distortion of order. An attention gating model (AGM) is developed from a more general attention model. (Author/LMO)

Towards component-based validation of GATE: aspects of the coincidence processor

PubMed Central

Moraes, Eder R.; Poon, Jonathan K.; Balakrishnan, Karthikayan; Wang, Wenli; Badawi, Ramsey D.

2014-01-01

GATE is public domain software widely used for Monte Carlo simulation in emission tomography. Validations of GATE have primarily been performed on a whole-system basis, leaving the possibility that errors in one sub-system may be offset by errors in others. We assess the accuracy of the GATE PET coincidence generation sub-system in isolation, focusing on the options most closely modeling the majority of commercially available scanners. Independent coincidence generators were coded by teams at Toshiba Medical Research Unit (TMRU) and UC Davis. A model similar to the Siemens mCT scanner was created in GATE. Annihilation photons interacting with the detectors were recorded. Coincidences were generated using GATE, TMRU and UC Davis code and results compared to “ground truth” obtained from the history of the photon interactions. GATE was tested twice, once with every qualified single event opening a time window and initiating a coincidence check (the “multiple window method”), and once where a time window is opened and a coincidence check initiated only by the first single event to occur after the end of the prior time window (the “single window method”). True, scattered and random coincidences were compared. Noise equivalent count rates were also computed and compared. The TMRU and UC Davis coincidence generators agree well with ground truth. With GATE, reasonable accuracy can be obtained if the single window method option is chosen and random coincidences are estimated without use of the delayed coincidence option. However in this GATE version, other parameter combinations can result in significant errors. PMID:25240897

Doubling the spectrum of time-domain induced polarization by harmonic de-noising, drift correction, spike removal, tapered gating and data uncertainty estimation

NASA Astrophysics Data System (ADS)

Olsson, Per-Ivar; Fiandaca, Gianluca; Larsen, Jakob Juul; Dahlin, Torleif; Auken, Esben

2016-11-01

The extraction of spectral information in the inversion process of time-domain (TD) induced polarization (IP) data is changing the use of the TDIP method. Data interpretation is evolving from a qualitative description of the subsurface, able only to discriminate the presence of contrasts in chargeability parameters, towards a quantitative analysis of the investigated media, which allows for detailed soil- and rock-type characterization. Two major limitations restrict the extraction of the spectral information of TDIP data in the field: (i) the difficulty of acquiring reliable early-time measurements in the millisecond range and (ii) the self-potential background drift in the measured potentials distorting the shape of the late-time IP responses, in the second range. Recent developments in TDIP acquisition equipment have given access to full-waveform recordings of measured potentials and transmitted current, opening for a breakthrough in data processing. For measuring at early times, we developed a new method for removing the significant noise from power lines contained in the data through a model-based approach, localizing the fundamental frequency of the power-line signal in the full-waveform IP recordings. By this, we cancel both the fundamental signal and its harmonics. Furthermore, an efficient processing scheme for identifying and removing spikes in TDIP data was developed. The noise cancellation and the de-spiking allow the use of earlier and narrower gates, down to a few milliseconds after the current turn-off. In addition, tapered windows are used in the final gating of IP data, allowing the use of wider and overlapping gates for higher noise suppression with minimal distortion of the signal. For measuring at late times, we have developed an algorithm for removal of the self-potential drift. Usually constant or linear drift-removal algorithms are used, but these algorithms often fail in removing the background potentials present when the electrodes used for potential readings are previously used for current injection, also for simple contact resistance measurements. We developed a drift-removal scheme that models the polarization effect and efficiently allows for preserving the shape of the IP responses at late times. Uncertainty estimates are essential in the inversion of IP data. Therefore, in the final step of the data processing, we estimate the data standard deviation based on the data variability within the IP gates and the misfit of the background drift removal Overall, the removal of harmonic noise, spikes, self-potential drift, tapered windowing and the uncertainty estimation allows for doubling the usable range of TDIP data to almost four decades in time (corresponding to four decades in frequency), which will significantly advance the applicability of the IP method.

Sensitive Precise p H Measurement with Large-Area Graphene Field-Effect Transistors at the Quantum-Capacitance Limit

NASA Astrophysics Data System (ADS)

Fakih, Ibrahim; Mahvash, Farzaneh; Siaj, Mohamed; Szkopek, Thomas

2017-10-01

A challenge for p H sensing is decreasing the minimum measurable p H per unit bandwidth in an economical fashion. Minimizing noise to reach the inherent limit imposed by charge fluctuation remains an obstacle. We demonstrate here graphene-based ion-sensing field-effect transistors that saturate the physical limit of sensitivity, defined here as the change in electrical response with respect to p H , and achieve a precision limited by charge-fluctuation noise at the sensing layer. We present a model outlining the necessity for maximizing the device carrier mobility, active sensing area, and capacitive coupling in order to minimize noise. We encapsulate large-area graphene with an ultrathin layer of parylene, a hydrophobic polymer, and deposit an ultrathin, stoichiometric p H -sensing layer of either aluminum oxide or tantalum pentoxide. With these structures, we achieve gate capacitances ˜0.6 μ F /cm2 , approaching the quantum-capacitance limit inherent to graphene, along with a near-Nernstian p H response of ˜55 ±2 mV /p H . We observe field-effect mobilities as high as 7000 cm2 V-1 s-1 with minimal hysteresis as a result of the parylene encapsulation. A detection limit of 0.1 m p H in a 60-Hz electrical bandwidth is observed in optimized graphene transistors.

Development of the compact proton beam therapy system dedicated to spot scanning with real-time tumor-tracking technology

NASA Astrophysics Data System (ADS)

Umezawa, Masumi; Fujimoto, Rintaro; Umekawa, Tooru; Fujii, Yuusuke; Takayanagi, Taisuke; Ebina, Futaro; Aoki, Takamichi; Nagamine, Yoshihiko; Matsuda, Koji; Hiramoto, Kazuo; Matsuura, Taeko; Miyamoto, Naoki; Nihongi, Hideaki; Umegaki, Kikuo; Shirato, Hiroki

2013-04-01

Hokkaido University and Hitachi Ltd. have started joint development of the Gated Spot Scanning Proton Therapy with Real-Time Tumor-Tracking System by integrating real-time tumor tracking technology (RTRT) and the proton therapy system dedicated to discrete spot scanning techniques under the "Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)". In this development, we have designed the synchrotron-based accelerator system by using the advantages of the spot scanning technique in order to realize a more compact and lower cost proton therapy system than the conventional system. In the gated irradiation, we have focused on the issues to maximize irradiation efficiency and minimize the dose errors caused by organ motion. In order to understand the interplay effect between scanning beam delivery and target motion, we conducted a simulation study. The newly designed system consists of the synchrotron, beam transport system, one compact rotating gantry treatment room with robotic couch, and one experimental room for future research. To improve the irradiation efficiency, the new control function which enables multiple gated irradiations per synchrotron cycle has been applied and its efficacy was confirmed by the irradiation time estimation. As for the interplay effect, we confirmed that the selection of a strict gating width and scan direction enables formation of the uniform dose distribution.

Mechanism-Based Mathematical Model for Gating of Ionotropic Glutamate Receptors.

PubMed

Dai, Jian; Wollmuth, Lonnie P; Zhou, Huan-Xiang

2015-08-27

We present a mathematical model for ionotropic glutamate receptors (iGluR's) that is built on mechanistic understanding and yields a number of thermodynamic and kinetic properties of channel gating. iGluR's are ligand-gated ion channels responsible for the vast majority of fast excitatory neurotransmission in the central nervous system. The effects of agonist-induced closure of the ligand-binding domain (LBD) are transmitted to the transmembrane channel (TMC) via interdomain linkers. Our model demonstrates that, relative to full agonists, partial agonists may reduce either the degree of LBD closure or the curvature of the LBD free energy basin, leading to less stabilization of the channel open state and hence lower channel open probability. A rigorous relation is derived between the channel closed-to-open free energy difference and the tension within the linker. Finally, by treating LBD closure and TMC opening as diffusive motions, we obtain gating trajectories that resemble stochastic current traces from single-channel recordings and calculate the rate constants for transitions between the channel open and closed states. Our model can be implemented by molecular dynamics simulations to realistically depict iGluR gating and may guide functional experiments in gaining deeper insight into this essential family of channel proteins.

Disorder from the Bulk Ionic Liquid in Electric Double Layer Transistors

DOE PAGES

Petach, Trevor A.; Reich, Konstantin V.; Zhang, Xiao; ...

2017-07-28

Ionic liquid gating has a number of advantages over solid-state gating, especially for flexible or transparent devices and for applications requiring high carrier densities. But, the large number of charged ions near the channel inevitably results in Coulomb scattering, which limits the carrier mobility in otherwise clean systems. We develop a model for this Coulomb scattering. We then validate our model experimentally using ionic liquid gating of graphene across varying thicknesses of hexagonal boron nitride, demonstrating that disorder in the bulk ionic liquid often dominates the scattering.

Modeling of High-Quality Factor XNOR Gate Using Quantum-Dot Semiconductor Optical Amplifiers at 1 Tb/s

NASA Astrophysics Data System (ADS)

Kotb, Amer

2015-06-01

The modeling of all-optical logic XNOR gate is realized by a series combination of XOR and INVERT gates. This Boolean function is simulated by using Mach-Zehnder interferometers (MZIs) utilizing quantum-dots semiconductor optical amplifiers (QDs-SOAs). The study is carried out when the effect of amplified spontaneous emission (ASE) is included. The dependence of the output quality factor ( Q-factor) on signals and QDs-SOAs' parameters is also investigated and discussed. The simulation is conducted under a repetition rate of ˜1 Tb/s.

Two dimensional analytical model for a reconfigurable field effect transistor

NASA Astrophysics Data System (ADS)

Ranjith, R.; Jayachandran, Remya; Suja, K. J.; Komaragiri, Rama S.

2018-02-01

This paper presents two-dimensional potential and current models for a reconfigurable field effect transistor (RFET). Two potential models which describe subthreshold and above-threshold channel potentials are developed by solving two-dimensional (2D) Poisson's equation. In the first potential model, 2D Poisson's equation is solved by considering constant/zero charge density in the channel region of the device to get the subthreshold potential characteristics. In the second model, accumulation charge density is considered to get above-threshold potential characteristics of the device. The proposed models are applicable for the device having lightly doped or intrinsic channel. While obtaining the mathematical model, whole body area is divided into two regions: gated region and un-gated region. The analytical models are compared with technology computer-aided design (TCAD) simulation results and are in complete agreement for different lengths of the gated regions as well as at various supply voltage levels.

Gate-Controllable Magneto-optic Kerr Effect in Layered Collinear Antiferromagnets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sivadas, Nikhil; Okamoto, Satoshi; Xiao, Di

2016-12-23

In this paper, using symmetry arguments and a tight-binding model, we show that for layered collinear antiferromagnets, magneto-optic effects can be generated and manipulated by controlling crystal symmetries through a gate voltage. This provides a promising route for electric field manipulation of the magneto-optic effects without modifying the underlying magnetic structure. We further demonstrate the gate control of the magneto-optic Kerr effect (MOKE) in bilayer MnPSe 3 using first-principles calculations. Finally, the field-induced inversion symmetry breaking effect leads to gate-controllable MOKE, whose direction of rotation can be switched by the reversal of the gate voltage.

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

NASA Astrophysics Data System (ADS)

Efthymiou, L.; Longobardi, G.; Camuso, G.; Chien, T.; Chen, M.; Udrea, F.

2017-03-01

In this study, an investigation is undertaken to determine the effect of gate design parameters on the on-state characteristics (threshold voltage and gate turn-on voltage) of pGaN/AlGaN/GaN high electron mobility transistors (HEMTs). Design parameters considered are pGaN doping and gate metal work function. The analysis considers the effects of variations on these parameters using a TCAD model matched with experimental results. A better understanding of the underlying physics governing the operation of these devices is achieved with a view to enable better optimization of such gate designs.

Application of Stochastic Automata Networks for Creation of Continuous Time Markov Chain Models of Voltage Gating of Gap Junction Channels

PubMed Central

Pranevicius, Henrikas; Pranevicius, Mindaugas; Pranevicius, Osvaldas; Bukauskas, Feliksas F.

2015-01-01

The primary goal of this work was to study advantages of numerical methods used for the creation of continuous time Markov chain models (CTMC) of voltage gating of gap junction (GJ) channels composed of connexin protein. This task was accomplished by describing gating of GJs using the formalism of the stochastic automata networks (SANs), which allowed for very efficient building and storing of infinitesimal generator of the CTMC that allowed to produce matrices of the models containing a distinct block structure. All of that allowed us to develop efficient numerical methods for a steady-state solution of CTMC models. This allowed us to accelerate CPU time, which is necessary to solve CTMC models, ∼20 times. PMID:25705700

On gate stack scalability of double-gate negative-capacitance FET with ferroelectric HfO2 for energy efficient sub-0.2 V operation

NASA Astrophysics Data System (ADS)

Jang, Kyungmin; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro

2018-02-01

We have investigated the gate stack scalability and energy efficiency of double-gate negative-capacitance FET (DGNCFET) with a CMOS-compatible ferroelectric HfO2 (FE:HfO2). Analytic model-based simulation is conducted to investigate the impacts of ferroelectric characteristic of FE:HfO2 and gate stack thickness on the I on/I off ratio of DGNCFET. DGNCFET has wider design window for the gate stack where higher I on/I off ratio can be achieved than DG classical MOSFET. Under a process-induced constraint with sub-10 nm gate length (L g), FE:HfO2-based DGNCFET still has a design point for high I on/I off ratio. With an optimized gate stack thickness for sub-10 nm L g, FE:HfO2-based DGNCFET has 2.5× higher energy efficiency than DG classical MOSFET even at ultralow operation voltage of sub-0.2 V.

DG TO FT - AUTOMATIC TRANSLATION OF DIGRAPH TO FAULT TREE MODELS

NASA Technical Reports Server (NTRS)

Iverson, D. L.

1994-01-01

Fault tree and digraph models are frequently used for system failure analysis. Both types of models represent a failure space view of the system using AND and OR nodes in a directed graph structure. Each model has its advantages. While digraphs can be derived in a fairly straightforward manner from system schematics and knowledge about component failure modes and system design, fault tree structure allows for fast processing using efficient techniques developed for tree data structures. The similarities between digraphs and fault trees permits the information encoded in the digraph to be translated into a logically equivalent fault tree. The DG TO FT translation tool will automatically translate digraph models, including those with loops or cycles, into fault tree models that have the same minimum cut set solutions as the input digraph. This tool could be useful, for example, if some parts of a system have been modeled using digraphs and others using fault trees. The digraphs could be translated and incorporated into the fault trees, allowing them to be analyzed using a number of powerful fault tree processing codes, such as cut set and quantitative solution codes. A cut set for a given node is a group of failure events that will cause the failure of the node. A minimum cut set for a node is any cut set that, if any of the failures in the set were to be removed, the occurrence of the other failures in the set will not cause the failure of the event represented by the node. Cut sets calculations can be used to find dependencies, weak links, and vital system components whose failures would cause serious systems failure. The DG TO FT translation system reads in a digraph with each node listed as a separate object in the input file. The user specifies a terminal node for the digraph that will be used as the top node of the resulting fault tree. A fault tree basic event node representing the failure of that digraph node is created and becomes a child of the terminal root node. A subtree is created for each of the inputs to the digraph terminal node and the root of those subtrees are added as children of the top node of the fault tree. Every node in the digraph upstream of the terminal node will be visited and converted. During the conversion process, the algorithm keeps track of the path from the digraph terminal node to the current digraph node. If a node is visited twice, then the program has found a cycle in the digraph. This cycle is broken by finding the minimal cut sets of the twice visited digraph node and forming those cut sets into subtrees. Another implementation of the algorithm resolves loops by building a subtree based on the digraph minimal cut sets calculation. It does not reduce the subtree to minimal cut set form. This second implementation produces larger fault trees, but runs much faster than the version using minimal cut sets since it does not spend time reducing the subtrees to minimal cut sets. The fault trees produced by DG TO FT will contain OR gates, AND gates, Basic Event nodes, and NOP gates. The results of a translation can be output as a text object description of the fault tree similar to the text digraph input format. The translator can also output a LISP language formatted file and an augmented LISP file which can be used by the FTDS (ARC-13019) diagnosis system, available from COSMIC, which performs diagnostic reasoning using the fault tree as a knowledge base. DG TO FT is written in C-language to be machine independent. It has been successfully implemented on a Sun running SunOS, a DECstation running ULTRIX, a Macintosh running System 7, and a DEC VAX running VMS. The RAM requirement varies with the size of the models. DG TO FT is available in UNIX tar format on a .25 inch streaming magnetic tape cartridge (standard distribution) or on a 3.5 inch diskette. It is also available on a 3.5 inch Macintosh format diskette or on a 9-track 1600 BPI magnetic tape in DEC VAX FILES-11 format. Sample input and sample output are provided on the distribution medium. An electronic copy of the documentation in Macintosh Microsoft Word format is provided on the distribution medium. DG TO FT was developed in 1992. Sun, and SunOS are trademarks of Sun Microsystems, Inc. DECstation, ULTRIX, VAX, and VMS are trademarks of Digital Equipment Corporation. UNIX is a registered trademark of AT&T Bell Laboratories. Macintosh is a registered trademark of Apple Computer, Inc. System 7 is a trademark of Apple Computers Inc. Microsoft Word is a trademark of Microsoft Corporation.

P2X purinoceptors as a link between hyperexcitability and neuroinflammation in status epilepticus.

PubMed

Henshall, David C; Engel, Tobias

2015-08-01

There remains a need for more efficacious treatments for status epilepticus. Prolonged seizures result in the release of ATP from cells which activates the P2 class of ionotropic and metabotropic purinoceptors. The P2X receptors gate depolarizing sodium and calcium entry and are expressed by both neurons and glia throughout the brain, and a number of subtypes are upregulated after status epilepticus. Recent studies have explored the in vivo effects of targeting ATP-gated P2X receptors in preclinical models of status epilepticus, with particular focus on the P2X7 receptor (P2X7R). The P2X7R mediates microglial activation and the release of the proepileptogenic inflammatory cytokine interleukin 1β. The receptor may also directly modulate neurotransmission and gliotransmission and promote the recruitment of immune cells into brain parenchyma. Data from our group and collaborators show that status epilepticus produced by intraamygdala microinjection of kainic acid increases P2X7R expression in the hippocampus and neocortex of mice. Antagonism of the P2X7R in the model reduced seizure severity, microglial activation and interleukin 1β release, and neuronal injury. Coadministration of a P2X7R antagonist with a benzodiazepine also provided seizure suppression in a model of drug-refractory status epilepticus when either treatment alone was minimally effective. More recently, we showed that status epilepticus in immature rats is also reduced by P2X7R antagonism. Together, these findings suggest that P2X receptors may be novel targets for seizure control and interruption of neuroinflammation after status epilepticus. This article is part of a Special Issue entitled "Status Epilepticus". Copyright © 2015 Elsevier Inc. All rights reserved.

Coupling mechanism in the gate and oscillator model of the SCN

NASA Astrophysics Data System (ADS)

Li, Ying; Liu, Zengrong

2016-09-01

In mammals, the suprachiasmatic nucleus (SCN) of the hypothalamus is considered as the master circadian pacemaker. The SCN is divided into two subgroups of gate and oscillator cells: the ventrolateral (VL) neurons, which receive the periodic light-dark (LD) signal, and the dorsomedial (DM) neurons, which are coupled to the VL cells. The fundamental question is how the individual cellular oscillators, expressing a wide range of periods, interact and assemble to create an integrated pacemaker that can govern behavioral and physiological rhythmicity and be reset by environmental light. The key is that the heterogeneous network formed by the cellular clocks within the SCN must synchronize to maintain timekeeping activity. Based on the structural and functional heterogeneity of the SCN, the authors bring forward a mathematical model including gate cells and oscillator cells with a wide range of periods. The gate neurons offer daily injection to oscillator neurons and the activation of gate is determined by the output of the oscillator neurons. In this model, the authors consider two kinds of coupling: interior coupling among the oscillator cells and exterior coupling from the gate cells to the oscillator cells. The authors mainly analyze the combined effects of these two kinds of coupling on the entrainment of the oscillator cells in the DM part. It is found that the interior coupling is conducive to entrainment, but a stronger coupling is not beneficial to entrainment. The gate mechanism in exterior coupling is more propitious to entrainment than continuous coupling. This study helps to understand collective circadian rhythm in the mammals.

Voltage-dependent conformational changes in connexin channels.

PubMed

Bargiello, Thaddeus A; Tang, Qingxiu; Oh, Seunghoon; Kwon, Taekyung

2012-08-01

Channels formed by connexins display two distinct types of voltage-dependent gating, termed V(j)- or fast-gating and loop- or slow-gating. Recent studies, using metal bridge formation and chemical cross-linking have identified a region within the channel pore that contributes to the formation of the loop-gate permeability barrier. The conformational changes are remarkably large, reducing the channel pore diameter from 15 to 20Å to less than 4Å. Surprisingly, the largest conformational change occurs in the most stable region of the channel pore, the 3(10) or parahelix formed by amino acids in the 42-51 segment. The data provide a set of positional constraints that can be used to model the structure of the loop-gate closed state. Less is known about the conformation of the V(j)-gate closed state. There appear to be two different mechanisms; one in which conformational changes in channel structure are linked to a voltage sensor contained in the N-terminus of Cx26 and Cx32 and a second in which the C-terminus of Cx43 and Cx40 may act either as a gating particle to block the channel pore or alternatively to stabilize the closed state. The later mechanism utilizes the same domains as implicated in effecting pH gating of Cx43 channels. It is unclear if the two V(j)-gating mechanisms are related or if they represent different gating mechanisms that operate separately in different subsets of connexin channels. A model of the V(j)-closed state of Cx26 hemichannel that is based on the X-ray structure of Cx26 and electron crystallographic structures of a Cx26 mutation suggests that the permeability barrier for V(j)-gating is formed exclusively by the N-terminus, but recent information suggests that this conformation may not represent a voltage-closed state. Closed state models are considered from a thermodynamic perspective based on information from the 3.5Å Cx26 crystal structure and molecular dynamics (MD) simulations. The applications of computational and experimental methods to define the path of allosteric molecular transitions that link the open and closed states are discussed. This article is part of a Special Issue entitled: The Communicating junctions, composition, structure and characteristics. Copyright © 2011 Elsevier B.V. All rights reserved.

Modeling of Metal-Ferroelectric-Semiconductor Field Effect Transistors

NASA Technical Reports Server (NTRS)

Duen Ho, Fat; Macleod, Todd C.

1998-01-01

The characteristics for a MFSFET (metal-ferroelectric-semiconductor field effect transistor) is very different than a conventional MOSFET and must be modeled differently. The drain current has a hysteresis shape with respect to the gate voltage. The position along the hysteresis curve is dependent on the last positive or negative polling of the ferroelectric material. The drain current also has a logarithmic decay after the last polling. A model has been developed to describe the MFSFET drain current for both gate voltage on and gate voltage off conditions. This model takes into account the hysteresis nature of the MFSFET and the time dependent decay. The model is based on the shape of the Fermi-Dirac function which has been modified to describe the MFSFET's drain current. This is different from the model proposed by Chen et. al. and that by Wu.

Influence of emotional states on inhibitory gating: Animals models to clinical neurophysiology

PubMed Central

Cromwell, Howard C.; Atchley, Rachel M.

2014-01-01

Integrating research efforts using a cross-domain approach could redefine traditional constructs used in behavioral and clinical neuroscience by demonstrating that behavior and mental processes arise not from functional isolation but from integration. Our research group has been examining the interface between cognitive and emotional processes by studying inhibitory gating. Inhibitory gating can be measured via changes in behavior or neural signal processing. Sensorimotor gating of the startle response is a well-used measure. To study how emotion and cognition interact during startle modulation in the animal model, we examined ultrasonic vocalization (USV) emissions during acoustic startle and prepulse inhibition. We found high rates of USV emission during the sensorimotor gating paradigm and revealed links between prepulse inhibition (PPI) and USV emission that could reflect emotional and cognitive influences. Measuring inhibitory gating as P50 event-related potential suppression has also revealed possible connections between emotional states and cognitive processes. We have examined the single unit responses during the traditional gating paradigm and found that acute and chronic stress can alter gating of neural signals in regions such as amygdala, striatum and medial prefrontal cortex. Our findings point to the need for more cross-domain research on how shifting states of emotion can impact basic mechanisms of information processing. Results could inform clinical work with the development of tools that depend upon cross-domain communication, and enable a better understanding and evaluation of psychological impairment. PMID:24861710

Comparison of gating methods for the real-time analysis of left ventricular function in nonimaging blood pool studies.

PubMed

Beard, B B; Stewart, J R; Shiavi, R G; Lorenz, C H

1995-01-01

Gating methods developed for electrocardiographic-triggered radionuclide ventriculography are being used with nonimaging detectors. These methods have not been compared on the basis of their real-time performance or suitability for determination of load-independent indexes of left ventricular function. This work evaluated the relative merits of different gating methods for nonimaging radionuclude ventriculographic studies, with particular emphasis on their suitability for real-time measurements and the determination of pressure-volume loops. A computer model was used to investigate the relative accuracy of forward gating, backward gating, and phase-mode gating. The durations of simulated left ventricular time-activity curves were randomly varied. Three acquisition parameters were considered: frame rate, acceptance window, and sample size. Twenty-five studies were performed for each combination of acquisition parameters. Hemodynamic and shape parameters from each study were compared with reference parameters derived directly from the random time-activity curves. Backward gating produced the largest errors under all conditions. For both forward gating and phase-mode gating, ejection fraction was underestimated and time to end systole and normalized peak ejection rate were overestimated. For the hemodynamic parameters, forward gating was marginally superior to phase-mode gating. The mean difference in errors between forward and phase-mode gating was 1.47% (SD 2.78%). However, for root mean square shape error, forward gating was several times worse in every case and seven times worse than phase-mode gating on average. Both forward and phase-mode gating are suitable for real-time hemodynamic measurements by nonimaging techniques. The small statistical difference between the methods is not clinically significant. The true shape of the time-activity curve is maintained most accurately by phase-mode gating.

Comparison of gating methods for the real-time analysis of left ventricular function in nonimaging blood pool studies

PubMed Central

Beard, Brian B.; Stewart, James R.; Shiavi, Richard G.; Lorenz, Christine H.

2018-01-01

Background Gating methods developed for electrocardiographic-triggered radionuclide ventriculography are being used with nonimaging detectors. These methods have not been compared on the basis of their real-time performance or suitability for determination of load-independent indexes of left ventricular function. This work evaluated the relative merits of different gating methods for nonimaging radionuclude ventriculographic studies, with particular emphasis on their suitability for real-time measurements and the determination of pressure-volume loops. Methods and Results A computer model was used to investigate the relative accuracy of forward gating, backward gating, and phase-mode gating. The durations of simulated left ventricular time-activity curves were randomly varied. Three acquisition parameters were considered: frame rate, acceptance window, and sample size. Twenty-five studies were performed for each combination of acquisition parameters. Hemodynamic and shape parameters from each study were compared with reference parameters derived directly from the random time-activity curves. Backward gating produced the largest errors under all conditions. For both forward gating and phase-mode gating, ejection fraction was underestimated and time to end systole and normalized peak ejection rate were overestimated. For the hemodynamic parameters, forward gating was marginally superior to phase-mode gating. The mean difference in errors between forward and phase-mode gating was 1.47% (SD 2.78%). However, for root mean square shape error, forward gating was several times worse in every case and seven times worse than phase-mode gating on average. Conclusions Both forward and phase-mode gating are suitable for real-time hemodynamic measurements by nonimaging techniques. The small statistical difference between the methods is not clinically significant. The true shape of the time-activity curve is maintained most accurately by phase-mode gating. PMID:9420820

A priori motion models for four-dimensional reconstruction in gated cardiac SPECT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lalush, D.S.; Tsui, B.M.W.; Cui, Lin

1996-12-31

We investigate the benefit of incorporating a priori assumptions about cardiac motion in a fully four-dimensional (4D) reconstruction algorithm for gated cardiac SPECT. Previous work has shown that non-motion-specific 4D Gibbs priors enforcing smoothing in time and space can control noise while preserving resolution. In this paper, we evaluate methods for incorporating known heart motion in the Gibbs prior model. The new model is derived by assigning motion vectors to each 4D voxel, defining the movement of that volume of activity into the neighboring time frames. Weights for the Gibbs cliques are computed based on these {open_quotes}most likely{close_quotes} motion vectors.more » To evaluate, we employ the mathematical cardiac-torso (MCAT) phantom with a new dynamic heart model that simulates the beating and twisting motion of the heart. Sixteen realistically-simulated gated datasets were generated, with noise simulated to emulate a real Tl-201 gated SPECT study. Reconstructions were performed using several different reconstruction algorithms, all modeling nonuniform attenuation and three-dimensional detector response. These include ML-EM with 4D filtering, 4D MAP-EM without prior motion assumption, and 4D MAP-EM with prior motion assumptions. The prior motion assumptions included both the correct motion model and incorrect models. Results show that reconstructions using the 4D prior model can smooth noise and preserve time-domain resolution more effectively than 4D linear filters. We conclude that modeling of motion in 4D reconstruction algorithms can be a powerful tool for smoothing noise and preserving temporal resolution in gated cardiac studies.« less

On the simple random-walk models of ion-channel gate dynamics reflecting long-term memory.

PubMed

Wawrzkiewicz, Agata; Pawelek, Krzysztof; Borys, Przemyslaw; Dworakowska, Beata; Grzywna, Zbigniew J

2012-06-01

Several approaches to ion-channel gating modelling have been proposed. Although many models describe the dwell-time distributions correctly, they are incapable of predicting and explaining the long-term correlations between the lengths of adjacent openings and closings of a channel. In this paper we propose two simple random-walk models of the gating dynamics of voltage and Ca(2+)-activated potassium channels which qualitatively reproduce the dwell-time distributions, and describe the experimentally observed long-term memory quite well. Biological interpretation of both models is presented. In particular, the origin of the correlations is associated with fluctuations of channel mass density. The long-term memory effect, as measured by Hurst R/S analysis of experimental single-channel patch-clamp recordings, is close to the behaviour predicted by our models. The flexibility of the models enables their use as templates for other types of ion channel.

A combined coarse-grained and all-atom simulation of TRPV1 channel gating and heat activation

PubMed Central

Qin, Feng

2015-01-01

The transient receptor potential (TRP) channels act as key sensors of various chemical and physical stimuli in eukaryotic cells. Despite years of study, the molecular mechanisms of TRP channel activation remain unclear. To elucidate the structural, dynamic, and energetic basis of gating in TRPV1 (a founding member of the TRPV subfamily), we performed coarse-grained modeling and all-atom molecular dynamics (MD) simulation based on the recently solved high resolution structures of the open and closed form of TRPV1. Our coarse-grained normal mode analysis captures two key modes of collective motions involved in the TRPV1 gating transition, featuring a quaternary twist motion of the transmembrane domains (TMDs) relative to the intracellular domains (ICDs). Our transition pathway modeling predicts a sequence of structural movements that propagate from the ICDs to the TMDs via key interface domains (including the membrane proximal domain and the C-terminal domain), leading to sequential opening of the selectivity filter followed by the lower gate in the channel pore (confirmed by modeling conformational changes induced by the activation of ICDs). The above findings of coarse-grained modeling are robust to perturbation by lipids. Finally, our MD simulation of the ICD identifies key residues that contribute differently to the nonpolar energy of the open and closed state, and these residues are predicted to control the temperature sensitivity of TRPV1 gating. These computational predictions offer new insights to the mechanism for heat activation of TRPV1 gating, and will guide our future electrophysiology and mutagenesis studies. PMID:25918362

Effect of atomic layer deposition temperature on current conduction in Al2O3 films formed using H2O oxidant

NASA Astrophysics Data System (ADS)

Hiraiwa, Atsushi; Matsumura, Daisuke; Kawarada, Hiroshi

2016-08-01

To develop high-performance, high-reliability gate insulation and surface passivation technologies for wide-bandgap semiconductor devices, the effect of atomic layer deposition (ALD) temperature on current conduction in Al2O3 films is investigated based on the recently proposed space-charge-controlled field emission model. Leakage current measurement shows that Al2O3 metal-insulator-semiconductor capacitors formed on the Si substrates underperform thermally grown SiO2 capacitors at the same average field. However, using equivalent oxide field as a more practical measure, the Al2O3 capacitors are found to outperform the SiO2 capacitors in the cases where the capacitors are negatively biased and the gate material is adequately selected to reduce virtual dipoles at the gate/Al2O3 interface. The Al2O3 electron affinity increases with the increasing ALD temperature, but the gate-side virtual dipoles are not affected. Therefore, the leakage current of negatively biased Al2O3 capacitors is approximately independent of the ALD temperature because of the compensation of the opposite effects of increased electron affinity and permittivity in Al2O3. By contrast, the substrate-side sheet of charge increases with increasing ALD temperature above 210 °C and hence enhances the current of positively biased Al2O3 capacitors more significantly at high temperatures. Additionally, an anomalous oscillatory shift of the current-voltage characteristics with ALD temperature was observed in positively biased capacitors formed by low-temperature (≤210 °C) ALD. This shift is caused by dipoles at the Al2O3/underlying SiO2 interface. Although they have a minimal positive-bias leakage current, the low-temperature-grown Al2O3 films cause the so-called blisters problem when heated above 400 °C. Therefore, because of the absence of blistering, a 450 °C ALD process is presently the most promising technology for growing high-reliability Al2O3 films.

Optimization of GATE and PHITS Monte Carlo code parameters for spot scanning proton beam based on simulation with FLUKA general-purpose code

NASA Astrophysics Data System (ADS)

Kurosu, Keita; Das, Indra J.; Moskvin, Vadim P.

2016-01-01

Spot scanning, owing to its superior dose-shaping capability, provides unsurpassed dose conformity, in particular for complex targets. However, the robustness of the delivered dose distribution and prescription has to be verified. Monte Carlo (MC) simulation has the potential to generate significant advantages for high-precise particle therapy, especially for medium containing inhomogeneities. However, the inherent choice of computational parameters in MC simulation codes of GATE, PHITS and FLUKA that is observed for uniform scanning proton beam needs to be evaluated. This means that the relationship between the effect of input parameters and the calculation results should be carefully scrutinized. The objective of this study was, therefore, to determine the optimal parameters for the spot scanning proton beam for both GATE and PHITS codes by using data from FLUKA simulation as a reference. The proton beam scanning system of the Indiana University Health Proton Therapy Center was modeled in FLUKA, and the geometry was subsequently and identically transferred to GATE and PHITS. Although the beam transport is managed by spot scanning system, the spot location is always set at the center of a water phantom of 600 × 600 × 300 mm3, which is placed after the treatment nozzle. The percentage depth dose (PDD) is computed along the central axis using 0.5 × 0.5 × 0.5 mm3 voxels in the water phantom. The PDDs and the proton ranges obtained with several computational parameters are then compared to those of FLUKA, and optimal parameters are determined from the accuracy of the proton range, suppressed dose deviation, and computational time minimization. Our results indicate that the optimized parameters are different from those for uniform scanning, suggesting that the gold standard for setting computational parameters for any proton therapy application cannot be determined consistently since the impact of setting parameters depends on the proton irradiation technique. We therefore conclude that customization parameters must be set with reference to the optimized parameters of the corresponding irradiation technique in order to render them useful for achieving artifact-free MC simulation for use in computational experiments and clinical treatments.

Ph-Dependent Inhibition of Voltage-Gated H+ Currents in Rat Alveolar Epithelial Cells by Zn2+ and Other Divalent Cations

PubMed Central

Cherny, Vladimir V.; DeCoursey, Thomas E.

1999-01-01

Inhibition by polyvalent cations is a defining characteristic of voltage-gated proton channels. The mechanism of this inhibition was studied in rat alveolar epithelial cells using tight-seal voltage clamp techniques. Metal concentrations were corrected for measured binding to buffers. Externally applied ZnCl2 reduced the H+ current, shifted the voltage-activation curve toward positive potentials, and slowed the turn-on of H+ current upon depolarization more than could be accounted for by a simple voltage shift, with minimal effects on the closing rate. The effects of Zn2+ were inconsistent with classical voltage-dependent block in which Zn2+ binds within the membrane voltage field. Instead, Zn2+ binds to superficial sites on the channel and modulates gating. The effects of extracellular Zn2+ were strongly pHo dependent but were insensitive to pHi, suggesting that protons and Zn2+ compete for external sites on H+ channels. The apparent potency of Zn2+ in slowing activation was ∼10× greater at pHo 7 than at pHo 6, and ∼100× greater at pHo 6 than at pHo 5. The pHo dependence suggests that Zn2+, not ZnOH+, is the active species. Evidently, the Zn2+ receptor is formed by multiple groups, protonation of any of which inhibits Zn2+ binding. The external receptor bound H+ and Zn2+ with pK a 6.2–6.6 and pK M 6.5, as described by several models. Zn2+ effects on the proton chord conductance–voltage (g H–V) relationship indicated higher affinities, pK a 7 and pK M 8. CdCl2 had similar effects as ZnCl2 and competed with H+, but had lower affinity. Zn2+ applied internally via the pipette solution or to inside-out patches had comparatively small effects, but at high concentrations reduced H+ currents and slowed channel closing. Thus, external and internal zinc-binding sites are different. The external Zn2+ receptor may be the same modulatory protonation site(s) at which pHo regulates H+ channel gating. PMID:10578017

Evaluation of stochastic differential equation approximation of ion channel gating models.

PubMed

Bruce, Ian C

2009-04-01

Fox and Lu derived an algorithm based on stochastic differential equations for approximating the kinetics of ion channel gating that is simpler and faster than "exact" algorithms for simulating Markov process models of channel gating. However, the approximation may not be sufficiently accurate to predict statistics of action potential generation in some cases. The objective of this study was to develop a framework for analyzing the inaccuracies and determining their origin. Simulations of a patch of membrane with voltage-gated sodium and potassium channels were performed using an exact algorithm for the kinetics of channel gating and the approximate algorithm of Fox & Lu. The Fox & Lu algorithm assumes that channel gating particle dynamics have a stochastic term that is uncorrelated, zero-mean Gaussian noise, whereas the results of this study demonstrate that in many cases the stochastic term in the Fox & Lu algorithm should be correlated and non-Gaussian noise with a non-zero mean. The results indicate that: (i) the source of the inaccuracy is that the Fox & Lu algorithm does not adequately describe the combined behavior of the multiple activation particles in each sodium and potassium channel, and (ii) the accuracy does not improve with increasing numbers of channels.

Diagnosis of Plasma Cell Dyscrasias and Monitoring of Minimal Residual Disease by Multiparametric Flow Cytometry

PubMed Central

Soh, Kah Teong; Tario, Joseph D.; Wallace, Paul K.

2018-01-01

Synopsis Plasma cell dyscrasia (PCD) is a heterogeneous disease which has seen a tremendous change in outcomes due to improved therapies. Over the last few decades, multiparametric flow cytometry has played an important role in the detection and monitoring of PCDs. Flow cytometry is a high sensitivity assay for early detection of minimal residual disease (MRD) that correlates well with progression-free survival and overall survival. Before flow cytometry can be effectively implemented in the clinical setting sample preparation, panel configuration, analysis, and gating strategies must be optimized to ensure accurate results. Current consensus methods and reporting guidelines for MRD testing are discussed. PMID:29128071

Quantum System Identification via L1-norm Minimization

DTIC Science & Technology

2011-06-30

number of entangled states for varying levels of amplitude damping γ. tude damping γ. In photonic systems γ is the probability of a photon loss. In...quantum process is a photonic entangling gate. A measurement configuration is defined as some combination of state preparation and an observable...first experimental demonstration of QPT via CS on a photonic system at the University of Queensland. The latter experimental results showed the

Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors

PubMed Central

McVay, Elaine; Palacios, Tomás

2018-01-01

This work develops the first frequency-dependent small-signal model for graphene electrolyte-gated field-effect transistors (EGFETs). Graphene EGFETs are microfabricated to measure intrinsic voltage gain, frequency response, and to develop a frequency-dependent small-signal model. The transfer function of the graphene EGFET small-signal model is found to contain a unique pole due to a resistive element, which stems from electrolyte gating. Intrinsic voltage gain, cutoff frequency, and transition frequency for the microfabricated graphene EGFETs are approximately 3.1 V/V, 1.9 kHz, and 6.9 kHz, respectively. This work marks a critical step in the development of high-speed chemical and biological sensors using graphene EGFETs. PMID:29414868

Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics

PubMed Central

Henkel, C.; Abermann, S.; Bethge, O.; Pozzovivo, G.; Klang, P.; Stöger-Pollach, M.; Bertagnolli, E.

2011-01-01

Schottky barrier SOI-MOSFETs incorporating a La2O3/ZrO2 high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N′-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameters are optimized to issue a minimal overall thermal budget and an improved device performance. As a result, the overall thermal load was kept as low as 350, 400 or 500 °C. Excellent drive current properties, low interface trap densities of 1.9 × 1011 eV−1 cm−2, a low subthreshold slope of 70-80 mV/decade, and an ION/IOFF current ratio greater than 2 × 106 are obtained. PMID:21461054

Speedup for quantum optimal control from automatic differentiation based on graphics processing units

NASA Astrophysics Data System (ADS)

Leung, Nelson; Abdelhafez, Mohamed; Koch, Jens; Schuster, David

2017-04-01

We implement a quantum optimal control algorithm based on automatic differentiation and harness the acceleration afforded by graphics processing units (GPUs). Automatic differentiation allows us to specify advanced optimization criteria and incorporate them in the optimization process with ease. We show that the use of GPUs can speedup calculations by more than an order of magnitude. Our strategy facilitates efficient numerical simulations on affordable desktop computers and exploration of a host of optimization constraints and system parameters relevant to real-life experiments. We demonstrate optimization of quantum evolution based on fine-grained evaluation of performance at each intermediate time step, thus enabling more intricate control on the evolution path, suppression of departures from the truncated model subspace, as well as minimization of the physical time needed to perform high-fidelity state preparation and unitary gates.

Respiratory trace feature analysis for the prediction of respiratory-gated PET quantification.

PubMed

Wang, Shouyi; Bowen, Stephen R; Chaovalitwongse, W Art; Sandison, George A; Grabowski, Thomas J; Kinahan, Paul E

2014-02-21

The benefits of respiratory gating in quantitative PET/CT vary tremendously between individual patients. Respiratory pattern is among many patient-specific characteristics that are thought to play an important role in gating-induced imaging improvements. However, the quantitative relationship between patient-specific characteristics of respiratory pattern and improvements in quantitative accuracy from respiratory-gated PET/CT has not been well established. If such a relationship could be estimated, then patient-specific respiratory patterns could be used to prospectively select appropriate motion compensation during image acquisition on a per-patient basis. This study was undertaken to develop a novel statistical model that predicts quantitative changes in PET/CT imaging due to respiratory gating. Free-breathing static FDG-PET images without gating and respiratory-gated FDG-PET images were collected from 22 lung and liver cancer patients on a PET/CT scanner. PET imaging quality was quantified with peak standardized uptake value (SUV(peak)) over lesions of interest. Relative differences in SUV(peak) between static and gated PET images were calculated to indicate quantitative imaging changes due to gating. A comprehensive multidimensional extraction of the morphological and statistical characteristics of respiratory patterns was conducted, resulting in 16 features that characterize representative patterns of a single respiratory trace. The six most informative features were subsequently extracted using a stepwise feature selection approach. The multiple-regression model was trained and tested based on a leave-one-subject-out cross-validation. The predicted quantitative improvements in PET imaging achieved an accuracy higher than 90% using a criterion with a dynamic error-tolerance range for SUV(peak) values. The results of this study suggest that our prediction framework could be applied to determine which patients would likely benefit from respiratory motion compensation when clinicians quantitatively assess PET/CT for therapy target definition and response assessment.

Hydrophobic interactions between the voltage sensor and pore mediate inactivation in Kv11.1 channels

PubMed Central

Perry, Matthew D.; Wong, Sophia; Ng, Chai Ann

2013-01-01

Kv11.1 channels are critical for the maintenance of a normal heart rhythm. The flow of potassium ions through these channels is controlled by two voltage-regulated gates, termed “activation” and “inactivation,” located at opposite ends of the pore. Crucially in Kv11.1 channels, inactivation gating occurs much more rapidly, and over a distinct range of voltages, compared with activation gating. Although it is clear that the fourth transmembrane segments (S4), within each subunit of the tetrameric channel, are important for controlling the opening and closing of the activation gate, their role during inactivation gating is much less clear. Here, we use rate equilibrium free energy relationship (REFER) analysis to probe the contribution of the S4 “voltage-sensor” helix during inactivation of Kv11.1 channels. Contrary to the important role that charged residues play during activation gating, it is the hydrophobic residues (Leu529, Leu530, Leu532, and Val535) that are the key molecular determinants of inactivation gating. Within the context of an interconnected multi-domain model of Kv11.1 inactivation gating, our REFER analysis indicates that the S4 helix and the S4–S5 linker undergo a conformational rearrangement shortly after that of the S5 helix and S5P linker, but before the S6 helix. Combining REFER analysis with double mutant cycle analysis, we provide evidence for a hydrophobic interaction between residues on the S4 and S5 helices. Based on a Kv11.1 channel homology model, we propose that this hydrophobic interaction forms the basis of an intersubunit coupling between the voltage sensor and pore domain that is an important mediator of inactivation gating. PMID:23980196

Towards component-based validation of GATE: aspects of the coincidence processor.

PubMed

Moraes, Eder R; Poon, Jonathan K; Balakrishnan, Karthikayan; Wang, Wenli; Badawi, Ramsey D

2015-02-01

GATE is public domain software widely used for Monte Carlo simulation in emission tomography. Validations of GATE have primarily been performed on a whole-system basis, leaving the possibility that errors in one sub-system may be offset by errors in others. We assess the accuracy of the GATE PET coincidence generation sub-system in isolation, focusing on the options most closely modeling the majority of commercially available scanners. Independent coincidence generators were coded by teams at Toshiba Medical Research Unit (TMRU) and UC Davis. A model similar to the Siemens mCT scanner was created in GATE. Annihilation photons interacting with the detectors were recorded. Coincidences were generated using GATE, TMRU and UC Davis code and results compared to "ground truth" obtained from the history of the photon interactions. GATE was tested twice, once with every qualified single event opening a time window and initiating a coincidence check (the "multiple window method"), and once where a time window is opened and a coincidence check initiated only by the first single event to occur after the end of the prior time window (the "single window method"). True, scattered and random coincidences were compared. Noise equivalent count rates were also computed and compared. The TMRU and UC Davis coincidence generators agree well with ground truth. With GATE, reasonable accuracy can be obtained if the single window method option is chosen and random coincidences are estimated without use of the delayed coincidence option. However in this GATE version, other parameter combinations can result in significant errors. Copyright © 2014 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Respiratory trace feature analysis for the prediction of respiratory-gated PET quantification

NASA Astrophysics Data System (ADS)

Wang, Shouyi; Bowen, Stephen R.; Chaovalitwongse, W. Art; Sandison, George A.; Grabowski, Thomas J.; Kinahan, Paul E.

2014-02-01

The benefits of respiratory gating in quantitative PET/CT vary tremendously between individual patients. Respiratory pattern is among many patient-specific characteristics that are thought to play an important role in gating-induced imaging improvements. However, the quantitative relationship between patient-specific characteristics of respiratory pattern and improvements in quantitative accuracy from respiratory-gated PET/CT has not been well established. If such a relationship could be estimated, then patient-specific respiratory patterns could be used to prospectively select appropriate motion compensation during image acquisition on a per-patient basis. This study was undertaken to develop a novel statistical model that predicts quantitative changes in PET/CT imaging due to respiratory gating. Free-breathing static FDG-PET images without gating and respiratory-gated FDG-PET images were collected from 22 lung and liver cancer patients on a PET/CT scanner. PET imaging quality was quantified with peak standardized uptake value (SUVpeak) over lesions of interest. Relative differences in SUVpeak between static and gated PET images were calculated to indicate quantitative imaging changes due to gating. A comprehensive multidimensional extraction of the morphological and statistical characteristics of respiratory patterns was conducted, resulting in 16 features that characterize representative patterns of a single respiratory trace. The six most informative features were subsequently extracted using a stepwise feature selection approach. The multiple-regression model was trained and tested based on a leave-one-subject-out cross-validation. The predicted quantitative improvements in PET imaging achieved an accuracy higher than 90% using a criterion with a dynamic error-tolerance range for SUVpeak values. The results of this study suggest that our prediction framework could be applied to determine which patients would likely benefit from respiratory motion compensation when clinicians quantitatively assess PET/CT for therapy target definition and response assessment.

A Hybrid Multi-gate Model of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Device Incorporating GaN-substrate Thermal Boundary Resistance

DTIC Science & Technology

2012-10-01

right by a pitch (P) and subsequently summed to provide a multi-gate superimposed temperature distribution ( TMG (x)). An example is shown in figure...temperature rise over the coolant, or the difference between the centerline multi gate junction temperature on the upper surface ( TMG ,GaN(0)) of the GaN...TC coolant temperature (°C) TCP(x) cold plate temperature distribution (°C) TGaN(x,y) temperature distribution within GaN (°C) TMG (x) multiple gate

Gating window dependency on scanned carbon-ion beam dose distribution and imaging dose for thoracoabdominal treatment.

PubMed

Mori, Shinichiro; Karube, Masataka; Yasuda, Shigeo; Yamamoto, Naoyoshi; Tsuji, Hiroshi; Kamada, Tadashi

2017-06-01

To explore the trade-off between dose assessment and imaging dose in respiratory gating with radiographic fluoroscopic imaging, we evaluated the relationship between dose assessment and fluoroscopic imaging dose in various gating windows, retrospectively. Four-dimensional (4D) CT images acquired for 10 patients with lung and liver tumours were used for 4D treatment planning for scanned carbon ion beam. Imaging dose from two oblique directions was calculated by the number of images multiplied by the air kerma per image. Necessary beam-on time was calculated from the treatment log file. Accumulated dose distribution was calculated. The gating window was defined as tumour position not respiratory phase and changed from 0-100% duty cycle on 4DCT. These metrics were individually evaluated for every case. For lung cases, sufficient dose conformation was achieved in respective gating windows [D 95 -clinical target volume (CTV) > 99%]. V 20 -lung values for 50%- and 30%-duty cycles were 2.5% and 6.0% of that for 100%-duty cycle. Maximum doses (cord/oesophagus) for 30%-duty cycle decreased 6.8%/7.4% to those for 100%-duty cycle. For liver cases, V 10 -liver values for 50%- and 30%-duty cycles were 9.4% and 12.8% of those for 100%-duty cycle, respectively. Maximum doses (cord/oesophagus) for 50%- and 30%-duty cycles also decreased 17.2%/19.3% and 24.6%/29.8% to those for 100%-duty cycle, respectively. Total imaging doses increased 43.5% and 115.8% for 50%- and 30%-duty cycles to that for the 100%-duty cycle. When normal tissue doses are below the tolerance level, the gating window should be expanded to minimize imaging dose and treatment time. Advances in knowledge: The skin dose from imaging might not be counterbalanced to the OAR dose; however, imaging dose is a particularly important factor.

Mobile high-performance computing (HPC) for synthetic aperture radar signal processing

NASA Astrophysics Data System (ADS)

Misko, Joshua; Kim, Youngsoo; Qi, Chenchen; Sirkeci, Birsen

2018-04-01

The importance of mobile high-performance computing has emerged in numerous battlespace applications at the tactical edge in hostile environments. Energy efficient computing power is a key enabler for diverse areas ranging from real-time big data analytics and atmospheric science to network science. However, the design of tactical mobile data centers is dominated by power, thermal, and physical constraints. Presently, it is very unlikely to achieve required computing processing power by aggregating emerging heterogeneous many-core processing platforms consisting of CPU, Field Programmable Gate Arrays and Graphic Processor cores constrained by power and performance. To address these challenges, we performed a Synthetic Aperture Radar case study for Automatic Target Recognition (ATR) using Deep Neural Networks (DNNs). However, these DNN models are typically trained using GPUs with gigabytes of external memories and massively used 32-bit floating point operations. As a result, DNNs do not run efficiently on hardware appropriate for low power or mobile applications. To address this limitation, we proposed for compressing DNN models for ATR suited to deployment on resource constrained hardware. This proposed compression framework utilizes promising DNN compression techniques including pruning and weight quantization while also focusing on processor features common to modern low-power devices. Following this methodology as a guideline produced a DNN for ATR tuned to maximize classification throughput, minimize power consumption, and minimize memory footprint on a low-power device.

Electron-conformational transformations govern the temperature dependence of the cardiac ryanodine receptor gating

NASA Astrophysics Data System (ADS)

Moskvin, A. S.; Iaparov, B. I.; Ryvkin, A. M.; Solovyova, O. E.; Markhasin, V. S.

2015-07-01

Temperature influences many aspects of cardiac excitation-contraction coupling, in particular, hypothermia increases the open probability ( P open) of cardiac sarcoplasmic reticulum (SR) Ca2+-release channels (ryanodine-sensitive RyR channels) rising the SR Ca2+ load in mammalian myocytes. However, to the best of our knowledge, no theoretical models are available for that effect. Traditional Markov chain models do not provide a reasonable molecular mechanistic insight on the origin of the temperature effects. Here in the paper we address a simple physically clear electron-conformational model to describe the RyR gating and argue that a synergetic effect of external thermal fluctuation forces (Gaussian-Markovian noise) and internal friction via the temperature stimulation/suppression of the open-close RyR tunneling probability can be considered as a main contributor to temperature effects on the RyR gating. Results of the computer modeling allowed us to successfully reproduce all the temperature effects observed for an isolated RyR gating in vitro under reducing the temperature: increase in P open and mean open time without any significant effect on mean closed

Monte Carlo simulation of Ray-Scan 64 PET system and performance evaluation using GATE toolkit

NASA Astrophysics Data System (ADS)

Li, Suying; Zhang, Qiushi; Vuletic, Ivan; Xie, Zhaoheng; Yang, Kun; Ren, Qiushi

2017-02-01

In this study, we aimed to develop a GATE model for the simulation of Ray-Scan 64 PET scanner and model its performance characteristics. A detailed implementation of system geometry and physical process were included in the simulation model. Then we modeled the performance characteristics of Ray-Scan 64 PET system for the first time, based on National Electrical Manufacturers Association (NEMA) NU-2 2007 protocols and validated the model against experimental measurement, including spatial resolution, sensitivity, counting rates and noise equivalent count rate (NECR). Moreover, an accurate dead time module was investigated to simulate the counting rate performance. Overall results showed reasonable agreement between simulation and experimental data. The validation results showed the reliability and feasibility of the GATE model to evaluate major performance of Ray-Scan 64 PET system. It provided a useful tool for a wide range of research applications.

Voltage-gated Proton Channels

PubMed Central

DeCoursey, Thomas E.

2014-01-01

Voltage-gated proton channels, HV1, have vaulted from the realm of the esoteric into the forefront of a central question facing ion channel biophysicists, namely the mechanism by which voltage-dependent gating occurs. This transformation is the result of several factors. Identification of the gene in 2006 revealed that proton channels are homologues of the voltage-sensing domain of most other voltage-gated ion channels. Unique, or at least eccentric, properties of proton channels include dimeric architecture with dual conduction pathways, perfect proton selectivity, a single-channel conductance ~103 smaller than most ion channels, voltage-dependent gating that is strongly modulated by the pH gradient, ΔpH, and potent inhibition by Zn2+ (in many species) but an absence of other potent inhibitors. The recent identification of HV1 in three unicellular marine plankton species has dramatically expanded the phylogenetic family tree. Interest in proton channels in their own right has increased as important physiological roles have been identified in many cells. Proton channels trigger the bioluminescent flash of dinoflagellates, facilitate calcification by coccolithophores, regulate pH-dependent processes in eggs and sperm during fertilization, secrete acid to control the pH of airway fluids, facilitate histamine secretion by basophils, and play a signaling role in facilitating B-cell receptor mediated responses in B lymphocytes. The most elaborate and best-established functions occur in phagocytes, where proton channels optimize the activity of NADPH oxidase, an important producer of reactive oxygen species. Proton efflux mediated by HV1 balances the charge translocated across the membrane by electrons through NADPH oxidase, minimizes changes in cytoplasmic and phagosomal pH, limits osmotic swelling of the phagosome, and provides substrate H+ for the production of H2O2 and HOCl, reactive oxygen species crucial to killing pathogens. PMID:23798303

Numerical model of a single nanocrystal devoted to the study of disordered nanocrystal floating gates of new flash memories

NASA Astrophysics Data System (ADS)

Leroy, Yann; Armeanu, Dumitru; Cordan, Anne-Sophie

2011-05-01

The improvement of our model concerning a single nanocrystal that belongs to a nanocrystal floating gate of a flash memory is presented. In order to extend the gate voltage range applicability of the model, the 3D continuum of states of either metallic or semiconducting electrodes is discretized into 2D subbands. Such an approach gives precise information about the mechanisms behind the charging or release processes of the nanocrystal. Then, the self-energy and screening effects of an electron within the nanocrystal are evaluated and introduced in the model. This enables a better determination of the operating point of the nanocrystal memory. The impact of those improvements on the charging or release time of the nanocrystal is discussed.

Efficient design of CMOS TSC checkers

NASA Technical Reports Server (NTRS)

Biddappa, Anita; Shamanna, Manjunath K.; Maki, Gary; Whitaker, Sterling

1990-01-01

This paper considers the design of an efficient, robustly testable, CMOS Totally Self-Checking (TSC) Checker for k-out-of-2k codes. Most existing implementations use primitive gates and assume the single stuck-at fault model. The self-testing property has been found to fail for CMOS TSC checkers under the stuck-open fault model due to timing skews and arbitrary delays in the circuit. A new four level design using CMOS primitive gates (NAND, NOR, INVERTERS) is presented. This design retains its properties under the stuck-open fault model. Additionally, this method offers an impressive reduction (greater than 70 percent) in gate count, gate inputs, and test set size when compared to the existing method. This implementation is easily realizable and is based on Anderson's technique. A thorough comparative study has been made on the proposed implementation and Kundu's implementation and the results indicate that the proposed one is better than Kundu's in all respects for k-out-of-2k codes.

Motion mitigation for lung cancer patients treated with active scanning proton therapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grassberger, Clemens, E-mail: Grassberger.Clemens@mgh.harvard.edu; Dowdell, Stephen; Sharp, Greg

2015-05-15

Purpose: Motion interplay can affect the tumor dose in scanned proton beam therapy. This study assesses the ability of rescanning and gating to mitigate interplay effects during lung treatments. Methods: The treatments of five lung cancer patients [48 Gy(RBE)/4fx] with varying tumor size (21.1–82.3 cm{sup 3}) and motion amplitude (2.9–30.6 mm) were simulated employing 4D Monte Carlo. The authors investigated two spot sizes (σ ∼ 12 and ∼3 mm), three rescanning techniques (layered, volumetric, breath-sampled volumetric) and respiratory gating with a 30% duty cycle. Results: For 4/5 patients, layered rescanning 6/2 times (for the small/large spot size) maintains equivalent uniformmore » dose within the target >98% for a single fraction. Breath sampling the timing of rescanning is ∼2 times more effective than the same number of continuous rescans. Volumetric rescanning is sensitive to synchronization effects, which was observed in 3/5 patients, though not for layered rescanning. For the large spot size, rescanning compared favorably with gating in terms of time requirements, i.e., 2x-rescanning is on average a factor ∼2.6 faster than gating for this scenario. For the small spot size however, 6x-rescanning takes on average 65% longer compared to gating. Rescanning has no effect on normal lung V{sub 20} and mean lung dose (MLD), though it reduces the maximum lung dose by on average 6.9 ± 2.4/16.7 ± 12.2 Gy(RBE) for the large and small spot sizes, respectively. Gating leads to a similar reduction in maximum dose and additionally reduces V{sub 20} and MLD. Breath-sampled rescanning is most successful in reducing the maximum dose to the normal lung. Conclusions: Both rescanning (2–6 times, depending on the beam size) as well as gating was able to mitigate interplay effects in the target for 4/5 patients studied. Layered rescanning is superior to volumetric rescanning, as the latter suffers from synchronization effects in 3/5 patients studied. Gating minimizes the irradiated volume of normal lung more efficiently, while breath-sampled rescanning is superior in reducing maximum doses to organs at risk.« less

Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT

NASA Astrophysics Data System (ADS)

Panda, D. K.; Lenka, T. R.

2017-12-01

In this paper the drain current low-frequency noise (LFN) of E-mode GaN MOS-HEMT is investigated for different gate insulators such as SiO2, Al2O3/Ga2O3/GdO3, HfO2/SiO2, La2O3/SiO2 and HfO2 with different trap densities by IFM based TCAD simulation. In order to analyze this an analytical model of drain current low frequency noise is developed. The model is developed by considering 2DEG carrier fluctuations, mobility fluctuations and the effects of 2DEG charge carrier fluctuations on the mobility. In the study of different gate insulators it is observed that carrier fluctuation is the dominant low frequency noise source and the non-uniform exponential distribution is critical to explain LFN behavior, so the analytical model is developed by considering uniform distribution of trap density. The model is validated with available experimental data from literature. The effect of total number of traps and gate length scaling on this low frequency noise due to different gate dielectrics is also investigated.

Highly Efficient Gating of Electrically Actuated Nanochannels for Pulsatile Drug Delivery Stemming from a Reversible Wettability Switch.

PubMed

Zhang, Qianqian; Kang, Jianxin; Xie, Zhiqiang; Diao, Xungang; Liu, Zhaoyue; Zhai, Jin

2018-01-01

Many ion channels in the cell membrane are believed to function as gates that control the water and ion flow through the transitions between an inherent hydrophobic state and a stimuli-induced hydration state. The construction of nanofluidic gating systems with high gating efficiency and reversibility is inspired by this hydrophobic gating behavior. A kind of electrically actuated nanochannel is developed by integrating a polypyrrole (PPy) micro/nanoporous film doped with perfluorooctanesulfonate ions onto an anodic aluminum oxide nanoporous membrane. Stemming from the reversible wettability switch of the doped PPy film in response to the applied redox potentials, the nanochannels exhibit highly efficient and reversible gating behaviors. The optimized gating ratio is over 10 5 , which is an ultrahigh value when compared with that of the existing reversibly gated nanochannels with comparable pore diameters. Furthermore, the gating behavior of the electrically actuated nanochannels shows excellent repeatability and stability. Based on this highly efficient and reversible gating function, the electrically actuated nanochannels are further applied for drug delivery, which achieves the pulsatile release of two water-soluble drug models. The electrically actuated nanochannels may find potential applications in accurate and on-demand drug therapy. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Coherent molecular transistor: control through variation of the gate wave function.

PubMed

Ernzerhof, Matthias

2014-03-21

In quantum interference transistors (QUITs), the current through the device is controlled by variation of the gate component of the wave function that interferes with the wave function component joining the source and the sink. Initially, mesoscopic QUITs have been studied and more recently, QUITs at the molecular scale have been proposed and implemented. Typically, in these devices the gate lead is subjected to externally adjustable physical parameters that permit interference control through modifications of the gate wave function. Here, we present an alternative model of a molecular QUIT in which the gate wave function is directly considered as a variable and the transistor operation is discussed in terms of this variable. This implies that we specify the gate current as well as the phase of the gate wave function component and calculate the resulting current through the source-sink channel. Thus, we extend on prior works that focus on the phase of the gate wave function component as a control parameter while having zero or certain discrete values of the current. We address a large class of systems, including finite graphene flakes, and obtain analytic solutions for how the gate wave function controls the transistor.

Cell-to-Cell Communication Circuits: Quantitative Analysis of Synthetic Logic Gates

PubMed Central

Hoffman-Sommer, Marta; Supady, Adriana; Klipp, Edda

2012-01-01

One of the goals in the field of synthetic biology is the construction of cellular computation devices that could function in a manner similar to electronic circuits. To this end, attempts are made to create biological systems that function as logic gates. In this work we present a theoretical quantitative analysis of a synthetic cellular logic-gates system, which has been implemented in cells of the yeast Saccharomyces cerevisiae (Regot et al., 2011). It exploits endogenous MAP kinase signaling pathways. The novelty of the system lies in the compartmentalization of the circuit where all basic logic gates are implemented in independent single cells that can then be cultured together to perform complex logic functions. We have constructed kinetic models of the multicellular IDENTITY, NOT, OR, and IMPLIES logic gates, using both deterministic and stochastic frameworks. All necessary model parameters are taken from literature or estimated based on published kinetic data, in such a way that the resulting models correctly capture important dynamic features of the included mitogen-activated protein kinase pathways. We analyze the models in terms of parameter sensitivity and we discuss possible ways of optimizing the system, e.g., by tuning the culture density. We apply a stochastic modeling approach, which simulates the behavior of whole populations of cells and allows us to investigate the noise generated in the system; we find that the gene expression units are the major sources of noise. Finally, the model is used for the design of system modifications: we show how the current system could be transformed to operate on three discrete values. PMID:22934039

Modal Analysis of a Steel Radial Gate Exposed to Different Water Levels

NASA Astrophysics Data System (ADS)

Brusewicz, Krzysztof; Sterpejkowicz-Wersocki, Witold; Jankowski, Robert

2017-06-01

With the increase in water retention needs and planned river regulation, it might be important to investigate the dynamic resistance of vulnerable elements of hydroelectric power plants, including steelwater locks. The most frequent dynamic loads affecting hydroengineering structures in Poland include vibrations caused by heavy road and railway traffic, piling works and mining tremors. More destructive dynamic loads, including earthquakes, may also occur in our country, although their incidence is relatively low. However, given the unpredictable nature of such events, as well as serious consequences they might cause, the study of the seismic resistance of the steel water gate, as one of the most vulnerable elements of a hydroelectric power plant, seems to be important. In this study, a steel radial gate has been analyzed. As far as water gates are concerned, it is among the most popular solutions because of its relatively small weight, compared to plain gates. A modal analysis of the steel radial gate was conducted with the use of the FEM in the ABAQUS software. All structural members were modelled using shell elements with detailed geometry representing a real structure.Water was modelled as an added mass affecting the structure. Different water levels were used to determine the most vulnerable state of the working steel water gate. The results of the modal analysis allowed us to compare the frequencies and their eigenmodes in response to different loads, which is one of the first steps in researching the dynamic properties of steel water gates and their behaviour during extreme dynamic loads, including earthquakes.

Mapping from multiple-control Toffoli circuits to linear nearest neighbor quantum circuits

NASA Astrophysics Data System (ADS)

Cheng, Xueyun; Guan, Zhijin; Ding, Weiping

2018-07-01

In recent years, quantum computing research has been attracting more and more attention, but few studies on the limited interaction distance between quantum bits (qubit) are deeply carried out. This paper presents a mapping method for transforming multiple-control Toffoli (MCT) circuits into linear nearest neighbor (LNN) quantum circuits instead of traditional decomposition-based methods. In order to reduce the number of inserted SWAP gates, a novel type of gate with the optimal LNN quantum realization was constructed, namely NNTS gate. The MCT gate with multiple control bits could be better cascaded by the NNTS gates, in which the arrangement of the input lines was LNN arrangement of the MCT gate. Then, the communication overhead measurement model on inserted SWAP gate count from the original arrangement to the new arrangement was put forward, and we selected one of the LNN arrangements with the minimum SWAP gate count. Moreover, the LNN arrangement-based mapping algorithm was given, and it dealt with the MCT gates in turn and mapped each MCT gate into its LNN form by inserting the minimum number of SWAP gates. Finally, some simplification rules were used, which can further reduce the final quantum cost of the LNN quantum circuit. Experiments on some benchmark MCT circuits indicate that the direct mapping algorithm results in fewer additional SWAP gates in about 50%, while the average improvement rate in quantum cost is 16.95% compared to the decomposition-based method. In addition, it has been verified that the proposed method has greater superiority for reversible circuits cascaded by MCT gates with more control bits.

Lens implementation on the GATE Monte Carlo toolkit for optical imaging simulation

NASA Astrophysics Data System (ADS)

Kang, Han Gyu; Song, Seong Hyun; Han, Young Been; Kim, Kyeong Min; Hong, Seong Jong

2018-02-01

Optical imaging techniques are widely used for in vivo preclinical studies, and it is well known that the Geant4 Application for Emission Tomography (GATE) can be employed for the Monte Carlo (MC) modeling of light transport inside heterogeneous tissues. However, the GATE MC toolkit is limited in that it does not yet include optical lens implementation, even though this is required for a more realistic optical imaging simulation. We describe our implementation of a biconvex lens into the GATE MC toolkit to improve both the sensitivity and spatial resolution for optical imaging simulation. The lens implemented into the GATE was validated against the ZEMAX optical simulation using an US air force 1951 resolution target. The ray diagrams and the charge-coupled device images of the GATE optical simulation agreed with the ZEMAX optical simulation results. In conclusion, the use of a lens on the GATE optical simulation could improve the image quality of bioluminescence and fluorescence significantly as compared with pinhole optics.

Voltage-dependent gating of KCNH potassium channels lacking a covalent link between voltage-sensing and pore domains

PubMed Central

Lörinczi, Éva; Gómez-Posada, Juan Camilo; de la Peña, Pilar; Tomczak, Adam P.; Fernández-Trillo, Jorge; Leipscher, Ulrike; Stühmer, Walter; Barros, Francisco; Pardo, Luis A.

2015-01-01

Voltage-gated channels open paths for ion permeation upon changes in membrane potential, but how voltage changes are coupled to gating is not entirely understood. Two modules can be recognized in voltage-gated potassium channels, one responsible for voltage sensing (transmembrane segments S1 to S4), the other for permeation (S5 and S6). It is generally assumed that the conversion of a conformational change in the voltage sensor into channel gating occurs through the intracellular S4–S5 linker that provides physical continuity between the two regions. Using the pathophysiologically relevant KCNH family, we show that truncated proteins interrupted at, or lacking the S4–S5 linker produce voltage-gated channels in a heterologous model that recapitulate both the voltage-sensing and permeation properties of the complete protein. These observations indicate that voltage sensing by the S4 segment is transduced to the channel gate in the absence of physical continuity between the modules. PMID:25818916

Voltage-dependent gating of KCNH potassium channels lacking a covalent link between voltage-sensing and pore domains.

PubMed

Lörinczi, Éva; Gómez-Posada, Juan Camilo; de la Peña, Pilar; Tomczak, Adam P; Fernández-Trillo, Jorge; Leipscher, Ulrike; Stühmer, Walter; Barros, Francisco; Pardo, Luis A

2015-03-30

Voltage-gated channels open paths for ion permeation upon changes in membrane potential, but how voltage changes are coupled to gating is not entirely understood. Two modules can be recognized in voltage-gated potassium channels, one responsible for voltage sensing (transmembrane segments S1 to S4), the other for permeation (S5 and S6). It is generally assumed that the conversion of a conformational change in the voltage sensor into channel gating occurs through the intracellular S4-S5 linker that provides physical continuity between the two regions. Using the pathophysiologically relevant KCNH family, we show that truncated proteins interrupted at, or lacking the S4-S5 linker produce voltage-gated channels in a heterologous model that recapitulate both the voltage-sensing and permeation properties of the complete protein. These observations indicate that voltage sensing by the S4 segment is transduced to the channel gate in the absence of physical continuity between the modules.

Voltage-dependent gating of KCNH potassium channels lacking a covalent link between voltage-sensing and pore domains

NASA Astrophysics Data System (ADS)

Lörinczi, Éva; Gómez-Posada, Juan Camilo; de La Peña, Pilar; Tomczak, Adam P.; Fernández-Trillo, Jorge; Leipscher, Ulrike; Stühmer, Walter; Barros, Francisco; Pardo, Luis A.

2015-03-01

Voltage-gated channels open paths for ion permeation upon changes in membrane potential, but how voltage changes are coupled to gating is not entirely understood. Two modules can be recognized in voltage-gated potassium channels, one responsible for voltage sensing (transmembrane segments S1 to S4), the other for permeation (S5 and S6). It is generally assumed that the conversion of a conformational change in the voltage sensor into channel gating occurs through the intracellular S4-S5 linker that provides physical continuity between the two regions. Using the pathophysiologically relevant KCNH family, we show that truncated proteins interrupted at, or lacking the S4-S5 linker produce voltage-gated channels in a heterologous model that recapitulate both the voltage-sensing and permeation properties of the complete protein. These observations indicate that voltage sensing by the S4 segment is transduced to the channel gate in the absence of physical continuity between the modules.

Left ventricular energy model predicts adverse events in women with suspected myocardial ischemia: results from the NHLBI-sponsored women’s ischemia syndrome evaluation (WISE) study

PubMed Central

Weinberg, Nicole; Pohost, Gerald M.; Bairey Merz, C. Noel; Shaw, Leslee J.; Sopko, George; Fuisz, Anthon; Rogers, William J.; Walsh, Edward G.; Johnson, B. Delia; Sharaf, Barry L.; Pepine, Carl J.; Mankad, Sunil; Reis, Steven E.; Rayarao, Geetha; Vido, Diane A.; Bittner, Vera; Tauxe, Lindsey; Olson, Marian B.; Kelsey, Sheryl F.; Biederman, Robert WW

2013-01-01

Objectives To assess the prognostic value of a left ventricular energy-model in women with suspected myocardial ischemia. Background The prognostic value of internal energy utilization (IEU) of the left ventricle in women with suspected myocardial ischemia is unknown. Methods Women [n=227, mean age 59±12 years (range, 31-86 years)], with symptoms of myocardial ischemia, underwent myocardial perfusion imaging (MPI) assessment for regional perfusion defects along with measurement of ventricular volumes separately by gated Single Photon Emission Computed Tomography (SPECT) (n=207) and magnetic resonance imaging (MRI) (n=203). During follow-up (40±17 months), time to first major adverse cardiovascular event (MACE, death, myocardial infarction or hospitalization for congestive heart failure) was analyzed using MRI and gated SPECT variables. Results Adverse events occurred in 31 (14%). Multivariable Cox models were formed for each modality: IEU and wall thickness by MRI (Chi-squared 34, P<0.005) and IEU and systolic blood pressure by gated SEPCT (Chi-squared 34, P<0.005). The models remained predictive after adjustment for age, disease history and Framingham risk score. For each Cox model, patients were categorized as high-risk if the model hazard was positive and not high-risk otherwise. Kaplan-Meier analysis of time to MACE was performed for high-risk vs. not high-risk for MR (log rank 25.3, P<0.001) and gated SEPCT (log rank 18.2, P<0.001) models. Conclusions Among women with suspected myocardial ischemia a high internal energy utilization has higher prognostic value than either a low EF or the presence of a myocardial perfusion defect assessed using two independent modalities of MR or gated SPECT. PMID:24015377

Fractional Poisson-Nernst-Planck Model for Ion Channels I: Basic Formulations and Algorithms.

PubMed

Chen, Duan

2017-11-01

In this work, we propose a fractional Poisson-Nernst-Planck model to describe ion permeation in gated ion channels. Due to the intrinsic conformational changes, crowdedness in narrow channel pores, binding and trapping introduced by functioning units of channel proteins, ionic transport in the channel exhibits a power-law-like anomalous diffusion dynamics. We start from continuous-time random walk model for a single ion and use a long-tailed density distribution function for the particle jump waiting time, to derive the fractional Fokker-Planck equation. Then, it is generalized to the macroscopic fractional Poisson-Nernst-Planck model for ionic concentrations. Necessary computational algorithms are designed to implement numerical simulations for the proposed model, and the dynamics of gating current is investigated. Numerical simulations show that the fractional PNP model provides a more qualitatively reasonable match to the profile of gating currents from experimental observations. Meanwhile, the proposed model motivates new challenges in terms of mathematical modeling and computations.

2D Quantum Mechanical Study of Nanoscale MOSFETs

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, B.; Kwak, Dochan (Technical Monitor)

2000-01-01

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25, 50 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. Surprisingly, the self-consistent potential profile shows lower injection barrier in the channel in quantum case. These results are qualitatively consistent with ID Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Structural models of the MscL gating mechanism

NASA Technical Reports Server (NTRS)

Sukharev, S.; Durell, S. R.; Guy, H. R.

2001-01-01

Three-dimensional structural models of the mechanosensitive channel of large conductance, MscL, from the bacteria Mycobacterium tuberculosis and Escherichia coli were developed for closed, intermediate, and open conformations. The modeling began with the crystal structure of M. tuberculosis MscL, a homopentamer with two transmembrane alpha-helices, M1 and M2, per subunit. The first 12 N-terminal residues, not resolved in the crystal structure, were modeled as an amphipathic alpha-helix, called S1. A bundle of five parallel S1 helices are postulated to form a cytoplasmic gate. As membrane tension induces expansion, the tilts of M1 and M2 are postulated to increase as they move away from the axis of the pore. Substantial expansion is postulated to occur before the increased stress in the S1 to M1 linkers pulls the S1 bundle apart. During the opening transition, the S1 helices and C-terminus amphipathic alpha-helices, S3, are postulated to dock parallel to the membrane surface on the perimeter of the complex. The proposed gating mechanism reveals critical spatial relationships between the expandable transmembrane barrel formed by M1 and M2, the gate formed by S1 helices, and "strings" that link S1s to M1s. These models are consistent with numerous experimental results and modeling criteria.

Fault trees and sequence dependencies

NASA Technical Reports Server (NTRS)

Dugan, Joanne Bechta; Boyd, Mark A.; Bavuso, Salvatore J.

1990-01-01

One of the frequently cited shortcomings of fault-tree models, their inability to model so-called sequence dependencies, is discussed. Several sources of such sequence dependencies are discussed, and new fault-tree gates to capture this behavior are defined. These complex behaviors can be included in present fault-tree models because they utilize a Markov solution. The utility of the new gates is demonstrated by presenting several models of the fault-tolerant parallel processor, which include both hot and cold spares.

Effects of a ketogenic diet on auditory gating in DBA/2 mice: A proof-of-concept study.

PubMed

Tregellas, Jason R; Smucny, Jason; Legget, Kristina T; Stevens, Karen E

2015-12-01

Although the ketogenic diet has shown promise in a pilot study and case report in schizophrenia, its effects in animal models of hypothesized disease mechanisms are unknown. This study examined effects of treatment with the ketogenic diet on hippocampal P20/N40 gating in DBA/2 mice, a translational endophenotype that mirrors inhibitory deficits in P50 sensory gating in schizophrenia patients. As expected, the diet increased blood ketone levels. Animals with the highest ketone levels showed the lowest P20/N40 gating ratios. These preliminary results suggest that the ketogenic diet may effectively target sensory gating deficits and is a promising area for additional research in schizophrenia. Published by Elsevier B.V.

Old River Low-Sill Control Structure. Report 1: Downpull Forces on Vertical-Lift Gates: Hydraulic Model Investigation

DTIC Science & Technology

1956-12-01

34- 25 I I I POOL I I \\ 1 I v Alt VrTS I 0 f TAILWJ.J v GATE COf!TACTS NAPPE I z Q 20 >- ~ w _J 15 w / c_ r- 1-1-- [/> NlPPE OVERTOPS GATE...Q. 40 • 0 ... 0 35 Q. J 0:: 30 w ~ 0 ...J ... 25 0 z 0 20 I\\ POOL [5 "A;t VrTS jTAILWJJ t= ~ w ...J 15 r== == / GATE CONTACT...vGATE CONTACT,S NAPPE 30 w ~ 0 ..1 "- 25 0 z 0 20 ;::: ~ w ..1 15 w 10 ~ [> A’l VrTS 1\\ ~~ !iTAILWAt) 1\\ 0 z "- 1-=:1=:- 1\\ < w ..1

Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

NASA Astrophysics Data System (ADS)

Panda, D. K.; Lenka, T. R.

2017-06-01

An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been developed using Verilog-A and simulated using Cadence Spectre, in order to predict device characteristics such as threshold voltage, drain current and gate capacitance. The drain current model incorporates important physical effects such as velocity saturation, short channel effects like DIBL (drain induced barrier lowering), channel length modulation (CLM), and mobility degradation due to self-heating. The predicted I d-V ds, I d-V gs, and C-V characteristics show an excellent agreement with the experimental data for both drain current and capacitance which validate the model. The developed model was then utilized to design and simulate a single-pole single-throw (SPST) RF switch.

Development of 4D mathematical observer models for the task-based evaluation of gated myocardial perfusion SPECT

NASA Astrophysics Data System (ADS)

Lee, Taek-Soo; Frey, Eric C.; Tsui, Benjamin M. W.

2015-04-01

This paper presents two 4D mathematical observer models for the detection of motion defects in 4D gated medical images. Their performance was compared with results from human observers in detecting a regional motion abnormality in simulated 4D gated myocardial perfusion (MP) SPECT images. The first 4D mathematical observer model extends the conventional channelized Hotelling observer (CHO) based on a set of 2D spatial channels and the second is a proposed model that uses a set of 4D space-time channels. Simulated projection data were generated using the 4D NURBS-based cardiac-torso (NCAT) phantom with 16 gates/cardiac cycle. The activity distribution modelled uptake of 99mTc MIBI with normal perfusion and a regional wall motion defect. An analytical projector was used in the simulation and the filtered backprojection (FBP) algorithm was used in image reconstruction followed by spatial and temporal low-pass filtering with various cut-off frequencies. Then, we extracted 2D image slices from each time frame and reorganized them into a set of cine images. For the first model, we applied 2D spatial channels to the cine images and generated a set of feature vectors that were stacked for the images from different slices of the heart. The process was repeated for each of the 1,024 noise realizations, and CHO and receiver operating characteristics (ROC) analysis methodologies were applied to the ensemble of the feature vectors to compute areas under the ROC curves (AUCs). For the second model, a set of 4D space-time channels was developed and applied to the sets of cine images to produce space-time feature vectors to which the CHO methodology was applied. The AUC values of the second model showed better agreement (Spearman’s rank correlation (SRC) coefficient = 0.8) to human observer results than those from the first model (SRC coefficient = 0.4). The agreement with human observers indicates the proposed 4D mathematical observer model provides a good predictor of the performance of human observers in detecting regional motion defects in 4D gated MP SPECT images. The result supports the use of the observer model in the optimization and evaluation of 4D image reconstruction and compensation methods for improving the detection of motion abnormalities in 4D gated MP SPECT images.

Plasma plume expansion dynamics in nanosecond Nd:YAG laserosteotome

NASA Astrophysics Data System (ADS)

Abbasi, Hamed; Rauter, Georg; Guzman, Raphael; Cattin, Philippe C.; Zam, Azhar

2018-02-01

In minimal invasive laser osteotomy precise information about the ablation process can be obtained with LIBS in order to avoid carbonization, or cutting of wrong types of tissue. Therefore, the collecting fiber for LIBS needs to be optimally placed in narrow cavities in the endoscope. To determine this optimal placement, the plasma plume expansion dynamics in ablation of bone tissue by the second harmonic of a nanosecond Nd:YAG laser at 532 nm has been studied. The laserinduced plasma plume was monitored in different time delays, from one nanosecond up to one hundred microseconds. Measurements were performed using high-speed gated illumination imaging. The expansion features were studied using illumination of the overall visible emission by using a gated intensified charged coupled device (ICCD). The camera was capable of having a minimum gate width (Optical FWHM) of 3 ns and the timing resolution (minimum temporal shift of the gate) of 10 ps. The imaging data were used to generate position-time data of the luminous plasma-front. Moreover, the velocity of the plasma plume expansion was studied based on the time-resolved intensity data. By knowing the plasma plume profile over time, the optimum position (axial distance from the laser spot) of the collecting fiber and optimal time delay (to have the best signal to noise ratio) in spatial-resolved and time-resolved laser-induced breakdown spectroscopy (LIBS) can be determined. Additionally, the function of plasma plume expansion could be used to study the shock wave of the plasma plume.

Dynamic Gate Product and Artifact Generation from System Models

NASA Technical Reports Server (NTRS)

Jackson, Maddalena; Delp, Christopher; Bindschadler, Duane; Sarrel, Marc; Wollaeger, Ryan; Lam, Doris

2011-01-01

Model Based Systems Engineering (MBSE) is gaining acceptance as a way to formalize systems engineering practice through the use of models. The traditional method of producing and managing a plethora of disjointed documents and presentations ("Power-Point Engineering") has proven both costly and limiting as a means to manage the complex and sophisticated specifications of modern space systems. We have developed a tool and method to produce sophisticated artifacts as views and by-products of integrated models, allowing us to minimize the practice of "Power-Point Engineering" from model-based projects and demonstrate the ability of MBSE to work within and supersede traditional engineering practices. This paper describes how we have created and successfully used model-based document generation techniques to extract paper artifacts from complex SysML and UML models in support of successful project reviews. Use of formal SysML and UML models for architecture and system design enables production of review documents, textual artifacts, and analyses that are consistent with one-another and require virtually no labor-intensive maintenance across small-scale design changes and multiple authors. This effort thus enables approaches that focus more on rigorous engineering work and less on "PowerPoint engineering" and production of paper-based documents or their "office-productivity" file equivalents.

Modulating Thin Film Transistor Characteristics by Texturing the Gate Metal.

PubMed

Nair, Aswathi; Bhattacharya, Prasenjit; Sambandan, Sanjiv

2017-12-20

The development of reliable, high performance integrated circuits based on thin film transistors (TFTs) is of interest for the development of flexible electronic circuits. In this work we illustrate the modulation of TFT transconductance via the texturing of the gate metal created by the addition of a conductive pattern on top of a planar gate. Texturing results in the semiconductor-insulator interface acquiring a non-planar geometry with local variations in the radius of curvature. This influences various TFT parameters such as the subthreshold slope, gate voltage at the onset of conduction, contact resistance and gate capacitance. Specific studies are performed on textures based on periodic striations oriented along different directions. Textured TFTs showed upto ±40% variation in transconductance depending on the texture orientation as compared to conventional planar gate TFTs. Analytical models are developed and compared with experiments. Gain boosting in common source amplifiers based on textured TFTs as compared to conventional TFTs is demonstrated.

Activity of Palythoa caribaeorum Venom on Voltage-Gated Ion Channels in Mammalian Superior Cervical Ganglion Neurons.

PubMed

Lazcano-Pérez, Fernando; Castro, Héctor; Arenas, Isabel; García, David E; González-Muñoz, Ricardo; Arreguín-Espinosa, Roberto

2016-05-05

The Zoanthids are an order of cnidarians whose venoms and toxins have been poorly studied. Palythoa caribaeorum is a zoanthid commonly found around the Mexican coastline. In this study, we tested the activity of P. caribaeorum venom on voltage-gated sodium channel (NaV1.7), voltage-gated calcium channel (CaV2.2), the A-type transient outward (IA) and delayed rectifier (IDR) currents of KV channels of the superior cervical ganglion (SCG) neurons of the rat. These results showed that the venom reversibly delays the inactivation process of voltage-gated sodium channels and inhibits voltage-gated calcium and potassium channels in this mammalian model. The compounds responsible for these effects seem to be low molecular weight peptides. Together, these results provide evidence for the potential use of zoanthids as a novel source of cnidarian toxins active on voltage-gated ion channels.

Activity of Palythoa caribaeorum Venom on Voltage-Gated Ion Channels in Mammalian Superior Cervical Ganglion Neurons

PubMed Central

Lazcano-Pérez, Fernando; Castro, Héctor; Arenas, Isabel; García, David E.; González-Muñoz, Ricardo; Arreguín-Espinosa, Roberto

2016-01-01

The Zoanthids are an order of cnidarians whose venoms and toxins have been poorly studied. Palythoa caribaeorum is a zoanthid commonly found around the Mexican coastline. In this study, we tested the activity of P. caribaeorum venom on voltage-gated sodium channel (NaV1.7), voltage-gated calcium channel (CaV2.2), the A-type transient outward (IA) and delayed rectifier (IDR) currents of KV channels of the superior cervical ganglion (SCG) neurons of the rat. These results showed that the venom reversibly delays the inactivation process of voltage-gated sodium channels and inhibits voltage-gated calcium and potassium channels in this mammalian model. The compounds responsible for these effects seem to be low molecular weight peptides. Together, these results provide evidence for the potential use of zoanthids as a novel source of cnidarian toxins active on voltage-gated ion channels. PMID:27164140

A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance

NASA Astrophysics Data System (ADS)

Kim, Hunho; Kwack, Young-Jin; Yun, Eui-Jung; Choi, Woon-Seop

2016-09-01

Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage properties of the zinc-tin oxide (ZTO) TFTs with the combined ZAO dielectrics by using the proposed metal-insulator-semiconductor (MIS) structure model. The capacitance evolution of the semiconductor from the TFT model structure described well the threshold voltage shift observed in the ZTO TFT with the ZAO (1:2) gate dielectric. The electrical properties of the ZTO TFT with a ZAO (1:2) gate dielectric showed low voltage driving with a field effect mobility of 37.01 cm2/Vs, a threshold voltage of 2.00 V, an on-to-off current ratio of 1.46 × 105, and a subthreshold slope of 0.10 V/dec.

A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance

PubMed Central

Kim, Hunho; Kwack, Young-Jin; Yun, Eui-Jung; Choi, Woon-Seop

2016-01-01

Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage properties of the zinc-tin oxide (ZTO) TFTs with the combined ZAO dielectrics by using the proposed metal-insulator-semiconductor (MIS) structure model. The capacitance evolution of the semiconductor from the TFT model structure described well the threshold voltage shift observed in the ZTO TFT with the ZAO (1:2) gate dielectric. The electrical properties of the ZTO TFT with a ZAO (1:2) gate dielectric showed low voltage driving with a field effect mobility of 37.01 cm2/Vs, a threshold voltage of 2.00 V, an on-to-off current ratio of 1.46 × 105, and a subthreshold slope of 0.10 V/dec. PMID:27641430

A two dimensional analytical modeling of surface potential in triple metal gate (TMG) fully-depleted Recessed-Source/Drain (Re-S/D) SOI MOSFET

NASA Astrophysics Data System (ADS)

Priya, Anjali; Mishra, Ram Awadh

2016-04-01

In this paper, analytical modeling of surface potential is proposed for new Triple Metal Gate (TMG) fully depleted Recessed-Source/Dain Silicon On Insulator (SOI) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The metal with the highest work function is arranged near the source region and the lowest one near the drain. Since Recessed-Source/Drain SOI MOSFET has higher drain current as compared to conventional SOI MOSFET due to large source and drain region. The surface potential model developed by 2D Poisson's equation is verified by comparison to the simulation result of 2-dimensional ATLAS simulator. The model is compared with DMG and SMG devices and analysed for different device parameters. The ratio of metal gate length is varied to optimize the result.

Consequences of Phosphate-Arginine Complexes in Voltage-Gated Ion Channels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Green, Michael E.

2008-11-01

There are two reasons for suspecting that phosphate complexes of arginine make it very difficult to derive gating charge in voltage gated potassium (and presumably sodium) channels from the motion of charged arginines. For one thing, the arginines should be complexed with phosphate, thereby neutralizing the charge, at least partially. Second, Li et al.(1) have shown that there is a large energy penalty for putting a charged arginine into a membrane. on channel gating current is generally attributed to S4 motion, in that the S4 segment of the voltage sensing domain (VSD) of these channels contains arginines, some of whichmore » are not (or at least not obviously) salt bridged, or otherwise charge compensated. There is, however, good reason to expect that there should be a complex of these arginines with phosphate, very probably from lipid headgroups. This has consequences for gating current; the complexed arginines, if they moved, would carry too much of the membrane along. This leads to the suggestion that an alternative to S4 physical motion, H+ transport, should be considered as a possible resolution of the apparent paradox. The consequences for a gating model that was proposed in our earlier work are discussed; there is one major difference in the model in the present form (a conformational change), but the proton cascade as gating current and the role of water in the closed state are reinforced.« less

High resolution radiometric measurements of convective storms during the GATE experiment

NASA Technical Reports Server (NTRS)

Fowler, G.; Lisa, A. S.

1976-01-01

Using passive microwave data from the NASA CV-990 aircraft and radar data collected during the Global Atmospheric Research Program Atlantic Tropical Experiment (GATE), an empirical model was developed relating brightness temperatures sensed at 19.35 GHz to surface rainfall rates. This model agreed well with theoretical computations of the relationship between microwave radiation and precipitation in the tropics. The GATE aircraft microwave data was then used to determine the detailed structure of convective systems. The high spatial resolution of the data permitted identification of individual cells which retained unique identities throughout their lifetimes in larger cloud masses and allowed analysis of the effects of cloud merger.

High voltage MOSFET devices and methods of making the devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Banerjee, Sujit; Matocha, Kevin; Chatty, Kiran

A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+more » region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.« less

Structure of the full-length TRPV2 channel by cryo-EM

NASA Astrophysics Data System (ADS)

Huynh, Kevin W.; Cohen, Matthew R.; Jiang, Jiansen; Samanta, Amrita; Lodowski, David T.; Zhou, Z. Hong; Moiseenkova-Bell, Vera Y.

2016-03-01

Transient receptor potential (TRP) proteins form a superfamily Ca2+-permeable cation channels regulated by a range of chemical and physical stimuli. Structural analysis of a `minimal' TRP vanilloid subtype 1 (TRPV1) elucidated a mechanism of channel activation by agonists through changes in its outer pore region. Though homologous to TRPV1, other TRPV channels (TRPV2-6) are insensitive to TRPV1 activators including heat and vanilloids. To further understand the structural basis of TRPV channel function, we determined the structure of full-length TRPV2 at ~5 Å resolution by cryo-electron microscopy. Like TRPV1, TRPV2 contains two constrictions, one each in the pore-forming upper and lower gates. The agonist-free full-length TRPV2 has wider upper and lower gates compared with closed and agonist-activated TRPV1. We propose these newly revealed TRPV2 structural features contribute to diversity of TRPV channels.

High voltage MOSFET devices and methods of making the devices

DOEpatents

Banerjee, Sujit; Matocha, Kevin; Chatty, Kiran

2015-12-15

A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+ region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.

Evolution of Nanowire Transmon Qubits and Their Coherence in a Magnetic Field

NASA Astrophysics Data System (ADS)

Luthi, F.; Stavenga, T.; Enzing, O. W.; Bruno, A.; Dickel, C.; Langford, N. K.; Rol, M. A.; Jespersen, T. S.; Nygârd, J.; Krogstrup, P.; DiCarlo, L.

2018-03-01

We present an experimental study of flux- and gate-tunable nanowire transmons with state-of-the-art relaxation time allowing quantitative extraction of flux and charge noise coupling to the Josephson energy. We evidence coherence sweet spots for charge, tuned by voltage on a proximal side gate, where first order sensitivity to switching two-level systems and background 1 /f noise is minimized. Next, we investigate the evolution of a nanowire transmon in a parallel magnetic field up to 70 mT, the upper bound set by the closing of the induced gap. Several features observed in the field dependence of qubit energy relaxation and dephasing times are not fully understood. Using nanowires with a thinner, partially covering Al shell will enable operation of these circuits up to 0.5 T, a regime relevant for topological quantum computation and other applications.

p-MOSFET total dose dosimeter

NASA Technical Reports Server (NTRS)

Buehler, Martin G. (Inventor); Blaes, Brent R. (Inventor)

1994-01-01

A p-MOSFET total dose dosimeter where the gate voltage is proportional to the incident radiation dose. It is configured in an n-WELL of a p-BODY substrate. It is operated in the saturation region which is ensured by connecting the gate to the drain. The n-well is connected to zero bias. Current flow from source to drain, rather than from peripheral leakage, is ensured by configuring the device as an edgeless MOSFET where the source completely surrounds the drain. The drain junction is the only junction not connected to zero bias. The MOSFET is connected as part of the feedback loop of an operational amplifier. The operational amplifier holds the drain current fixed at a level which minimizes temperature dependence and also fixes the drain voltage. The sensitivity to radiation is made maximum by operating the MOSFET in the OFF state during radiation soak.

Structure of the full-length TRPV2 channel by cryo-EM

PubMed Central

Huynh, Kevin W.; Cohen, Matthew R.; Jiang, Jiansen; Samanta, Amrita; Lodowski, David T.; Zhou, Z. Hong; Moiseenkova-Bell, Vera Y.

2016-01-01

Transient receptor potential (TRP) proteins form a superfamily Ca2+-permeable cation channels regulated by a range of chemical and physical stimuli. Structural analysis of a ‘minimal' TRP vanilloid subtype 1 (TRPV1) elucidated a mechanism of channel activation by agonists through changes in its outer pore region. Though homologous to TRPV1, other TRPV channels (TRPV2–6) are insensitive to TRPV1 activators including heat and vanilloids. To further understand the structural basis of TRPV channel function, we determined the structure of full-length TRPV2 at ∼5 Å resolution by cryo-electron microscopy. Like TRPV1, TRPV2 contains two constrictions, one each in the pore-forming upper and lower gates. The agonist-free full-length TRPV2 has wider upper and lower gates compared with closed and agonist-activated TRPV1. We propose these newly revealed TRPV2 structural features contribute to diversity of TRPV channels. PMID:27021073

Structure of the full-length TRPV2 channel by cryo-EM.

PubMed

Huynh, Kevin W; Cohen, Matthew R; Jiang, Jiansen; Samanta, Amrita; Lodowski, David T; Zhou, Z Hong; Moiseenkova-Bell, Vera Y

2016-03-29

Transient receptor potential (TRP) proteins form a superfamily Ca(2+)-permeable cation channels regulated by a range of chemical and physical stimuli. Structural analysis of a 'minimal' TRP vanilloid subtype 1 (TRPV1) elucidated a mechanism of channel activation by agonists through changes in its outer pore region. Though homologous to TRPV1, other TRPV channels (TRPV2-6) are insensitive to TRPV1 activators including heat and vanilloids. To further understand the structural basis of TRPV channel function, we determined the structure of full-length TRPV2 at ∼5 Å resolution by cryo-electron microscopy. Like TRPV1, TRPV2 contains two constrictions, one each in the pore-forming upper and lower gates. The agonist-free full-length TRPV2 has wider upper and lower gates compared with closed and agonist-activated TRPV1. We propose these newly revealed TRPV2 structural features contribute to diversity of TRPV channels.

Modularity Induced Gating and Delays in Neuronal Networks

PubMed Central

Shein-Idelson, Mark; Cohen, Gilad; Hanein, Yael

2016-01-01

Neural networks, despite their highly interconnected nature, exhibit distinctly localized and gated activation. Modularity, a distinctive feature of neural networks, has been recently proposed as an important parameter determining the manner by which networks support activity propagation. Here we use an engineered biological model, consisting of engineered rat cortical neurons, to study the role of modular topology in gating the activity between cell populations. We show that pairs of connected modules support conditional propagation (transmitting stronger bursts with higher probability), long delays and propagation asymmetry. Moreover, large modular networks manifest diverse patterns of both local and global activation. Blocking inhibition decreased activity diversity and replaced it with highly consistent transmission patterns. By independently controlling modularity and disinhibition, experimentally and in a model, we pose that modular topology is an important parameter affecting activation localization and is instrumental for population-level gating by disinhibition. PMID:27104350

Usefulness of a new online patient-specific quality assurance system for respiratory-gated radiotherapy.

PubMed

Kurosawa, Tomoyuki; Tachibana, Hidenobu; Moriya, Shunsuke; Miyakawa, Shin; Nishio, Teiji; Sato, Masanori

2017-11-01

The accuracy of gated irradiation may decrease when treatment is performed with short "beam-on" times. Also, the dose is subject to variation between treatment sessions if the respiratory rate is irregular. We therefore evaluated the impact of the differences between gated and non-gated treatment on doses using a new online quality assurance (QA) system for respiratory-gated radiotherapy. We generated dose estimation models to associate dose and pulse information using a 0.6 cc Farmer chamber and our QA system. During gated irradiation with each of seven regular and irregular respiratory patterns, with the Farmer chamber readings as references, we evaluated our QA system's accuracy. We then used the QA system to assess the impact of respiratory patterns on dose distribution for three lung and three liver radiotherapy plans. Gated and non-gated plans were generated and compared. There was agreement within 1.7% between the ionization chamber and our system for several regular and irregular motion patterns. For dose distributions with measured errors, there were larger differences between gated and non-gated treatment for high-dose regions within the planned treatment volume (PTV). Compared with a non-gated plan, PTV D 95% for a gated plan decreased by -1.5% to -2.6%. Doses to organs at risk were similar with both plans. Our simple system estimated the radiation dose to the patient using only pulse information from the linac, even during irregular respiration. The quality of gated irradiation for each patient can be verified fraction by fraction. Copyright © 2017 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Real-time photoelectron spectroscopy study of the oxidation reaction kinetics on p-type and n-type Si (001) surfaces

NASA Astrophysics Data System (ADS)

Yu, Zhou

Silicon oxides thermally grown on Si surface are the core gate materials of metal-oxide-semiconductor field effect transistor (MOSFET). This thin oxide layer insulates the gate terminals and the transistors substrate which make MOSFET has certain advantages over those conventional junctions, such as field-effect transistor (FET) and junction field effect transistor (JFET). With an oxide insulating layer, MOSFET is able to sustain higher input impedance and the corresponding gate leakage current can be minimized. Today, though the oxidation process on Si substrate is popular in industry, there are still some uncertainties about its oxidation kinetics. On a path to clarify and modeling the oxidation kinetics, a study of initial oxidation kinetics on Si (001) surface has attracted attentions due to having a relatively low surface electron density and few adsorption channels compared with other Si surface direction. Based on previous studies, there are two oxidation models of Si (001) that extensively accepted, which are dual oxide species mode and autocatalytic reaction model. These models suggest the oxidation kinetics on Si (001) mainly relies on the metastable oxygen atom on the surface and the kinetic is temperature dependent. Professor Yuji Takakuwa's group, Surface Physics laboratory, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, observed surface strain existed during the oxidation kinetics on Si (001) and this is the first time that strain was discovered during Si oxidation. Therefore, it is necessary to explain where the strain comes from since none of previous model research included the surface strain (defects generation) into considerations. Moreover, recent developing of complementary metal-oxide-semiconductor (CMOS) requires a simultaneous oxidation process on p- and n-type Si substrate. However, none of those previous models included the dopant factor into the oxidation kinetic modeling. All of these points that further work is necessary to update and modify the traditional Si (001) oxidation models that had been accepted for several decades. To update and complement the Si (001) oxidation kinetics, an understanding of the temperature and dopant factor during initial oxidation kinetics on Si (001) is our first step. In this study, real-time photoelectron spectroscopy is applied to characterize the oxidized (001) surface and surface information was collected by ultraviolet photoelectron spectroscopy technique. By analyzing parameters such as O 2p spectra uptake, change of work function and the surface state in respect of p- and n- type Si (001) substrate under different temperature, the oxygen adsorption structure and the dopant factor can be determined. In this study, experiments with temperature gradients on p-type Si (001) were conducted and this aims to clarify the temperature dependent characteristic of Si (001) surface oxidation. A comparison of the O 2p uptake, change of work function and surface state between p-and n-type Si (001) is made under a normal temperature and these provides with the data to explain how the dopant factor impacts the oxygen adsorption structure on the surface. In the future, the study of the oxygen adsorption structure will lead to an explanation of the surface strain that discovered; therefore, fundamental of the initial oxidation on Si (001) would be updated and complemented, which would contribute to the future gate technology in MOSFET and CMOS.

A spatio-temporally compensated acousto-optic scanner for two-photon microscopy providing large field of view.

PubMed

Kremer, Y; Léger, J-F; Lapole, R; Honnorat, N; Candela, Y; Dieudonné, S; Bourdieu, L

2008-07-07

Acousto-optic deflectors (AOD) are promising ultrafast scanners for non-linear microscopy. Their use has been limited until now by their small scanning range and by the spatial and temporal dispersions of the laser beam going through the deflectors. We show that the use of AOD of large aperture (13mm) compared to standard deflectors allows accessing much larger field of view while minimizing spatio-temporal distortions. An acousto-optic modulator (AOM) placed at distance of the AOD is used to compensate spatial and temporal dispersions. Fine tuning of the AOM-AOD setup using a frequency-resolved optical gating (GRENOUILLE) allows elimination of pulse front tilt whereas spatial chirp is minimized thanks to the large aperture AOD.

Dosimetry applications in GATE Monte Carlo toolkit.

PubMed

Papadimitroulas, Panagiotis

2017-09-01

Monte Carlo (MC) simulations are a well-established method for studying physical processes in medical physics. The purpose of this review is to present GATE dosimetry applications on diagnostic and therapeutic simulated protocols. There is a significant need for accurate quantification of the absorbed dose in several specific applications such as preclinical and pediatric studies. GATE is an open-source MC toolkit for simulating imaging, radiotherapy (RT) and dosimetry applications in a user-friendly environment, which is well validated and widely accepted by the scientific community. In RT applications, during treatment planning, it is essential to accurately assess the deposited energy and the absorbed dose per tissue/organ of interest, as well as the local statistical uncertainty. Several types of realistic dosimetric applications are described including: molecular imaging, radio-immunotherapy, radiotherapy and brachytherapy. GATE has been efficiently used in several applications, such as Dose Point Kernels, S-values, Brachytherapy parameters, and has been compared against various MC codes which are considered as standard tools for decades. Furthermore, the presented studies show reliable modeling of particle beams when comparing experimental with simulated data. Examples of different dosimetric protocols are reported for individualized dosimetry and simulations combining imaging and therapy dose monitoring, with the use of modern computational phantoms. Personalization of medical protocols can be achieved by combining GATE MC simulations with anthropomorphic computational models and clinical anatomical data. This is a review study, covering several dosimetric applications of GATE, and the different tools used for modeling realistic clinical acquisitions with accurate dose assessment. Copyright © 2017 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Internal dosimetry through GATE simulations of preclinical radiotherapy using a melanin-targeting ligand

NASA Astrophysics Data System (ADS)

Perrot, Y.; Degoul, F.; Auzeloux, P.; Bonnet, M.; Cachin, F.; Chezal, J. M.; Donnarieix, D.; Labarre, P.; Moins, N.; Papon, J.; Rbah-Vidal, L.; Vidal, A.; Miot-Noirault, E.; Maigne, L.

2014-05-01

The GATE Monte Carlo simulation platform based on the Geant4 toolkit is under constant improvement for dosimetric calculations. In this study, we explore its use for the dosimetry of the preclinical targeted radiotherapy of melanoma using a new specific melanin-targeting radiotracer labeled with iodine 131. Calculated absorbed fractions and S values for spheres and murine models (digital and CT-scan-based mouse phantoms) are compared between GATE and EGSnrc Monte Carlo codes considering monoenergetic electrons and the detailed energy spectrum of iodine 131. The behavior of Geant4 standard and low energy models is also tested. Following the different authors’ guidelines concerning the parameterization of electron physics models, this study demonstrates an agreement of 1.2% and 1.5% with EGSnrc, respectively, for the calculation of S values for small spheres and mouse phantoms. S values calculated with GATE are then used to compute the dose distribution in organs of interest using the activity distribution in mouse phantoms. This study gives the dosimetric data required for the translation of the new treatment to the clinic.

Probing Conformational Changes in Human DNA Topoisomerase IIα by Pulsed Alkylation Mass Spectrometry*

PubMed Central

Chen, Yu-tsung; Collins, Tammy R. L.; Guan, Ziqiang; Chen, Vincent B.; Hsieh, Tao-Shih

2012-01-01

Type II topoisomerases are essential enzymes for solving DNA topological problems by passing one segment of DNA duplex through a transient double-strand break in a second segment. The reaction requires the enzyme to precisely control DNA cleavage and gate opening coupled with ATP hydrolysis. Using pulsed alkylation mass spectrometry, we were able to monitor the solvent accessibilities around 13 cysteines distributed throughout human topoisomerase IIα by measuring the thiol reactivities with monobromobimane. Most of the measured reactivities are in accordance with the predicted ones based on a homology structural model generated from available crystal structures. However, these results reveal new information for both the residues not covered in the structural model and potential differences between the modeled and solution holoenzyme structures. Furthermore, on the basis of the reactivity changes of several cysteines located at the N-gate and DNA gate, we could monitor the movement of topoisomerase II in the presence of cofactors and detect differences in the DNA gate between two closed clamp enzyme conformations locked by either 5′-adenylyl β,γ-imidodiphosphate or the anticancer drug ICRF-193. PMID:22679013

Optogenetics: a new enlightenment age for zebrafish neurobiology.

PubMed

Del Bene, Filippo; Wyart, Claire

2012-03-01

Zebrafish became a model of choice for neurobiology because of the transparency of its brain and because of its amenability to genetic manipulation. In particular, at early stages of development the intact larva is an ideal system to apply optical techniques for deep imaging in the nervous system, as well as genetically encoded tools for targeting subsets of neurons and monitoring and manipulating their activity. For these applications,new genetically encoded optical tools, fluorescent sensors, and light-gated channels have been generated,creating the field of "optogenetics." It is now possible to monitor and control neuronal activity with minimal perturbation and unprecedented spatio-temporal resolution.We describe here the main achievements that have occurred in the last decade in imaging and manipulating neuronal activity in intact zebrafish larvae. We provide also examples of functional dissection of neuronal circuits achieved with the applications of these techniques in the visual and locomotor systems.

Lens implementation on the GATE Monte Carlo toolkit for optical imaging simulation.

PubMed

Kang, Han Gyu; Song, Seong Hyun; Han, Young Been; Kim, Kyeong Min; Hong, Seong Jong

2018-02-01

Optical imaging techniques are widely used for in vivo preclinical studies, and it is well known that the Geant4 Application for Emission Tomography (GATE) can be employed for the Monte Carlo (MC) modeling of light transport inside heterogeneous tissues. However, the GATE MC toolkit is limited in that it does not yet include optical lens implementation, even though this is required for a more realistic optical imaging simulation. We describe our implementation of a biconvex lens into the GATE MC toolkit to improve both the sensitivity and spatial resolution for optical imaging simulation. The lens implemented into the GATE was validated against the ZEMAX optical simulation using an US air force 1951 resolution target. The ray diagrams and the charge-coupled device images of the GATE optical simulation agreed with the ZEMAX optical simulation results. In conclusion, the use of a lens on the GATE optical simulation could improve the image quality of bioluminescence and fluorescence significantly as compared with pinhole optics. (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).

A parallel computational model for GATE simulations.

PubMed

Rannou, F R; Vega-Acevedo, N; El Bitar, Z

2013-12-01

GATE/Geant4 Monte Carlo simulations are computationally demanding applications, requiring thousands of processor hours to produce realistic results. The classical strategy of distributing the simulation of individual events does not apply efficiently for Positron Emission Tomography (PET) experiments, because it requires a centralized coincidence processing and large communication overheads. We propose a parallel computational model for GATE that handles event generation and coincidence processing in a simple and efficient way by decentralizing event generation and processing but maintaining a centralized event and time coordinator. The model is implemented with the inclusion of a new set of factory classes that can run the same executable in sequential or parallel mode. A Mann-Whitney test shows that the output produced by this parallel model in terms of number of tallies is equivalent (but not equal) to its sequential counterpart. Computational performance evaluation shows that the software is scalable and well balanced. Copyright © 2013 Elsevier Ireland Ltd. All rights reserved.

Parallel logic gates in synthetic gene networks induced by non-Gaussian noise.

PubMed

Xu, Yong; Jin, Xiaoqin; Zhang, Huiqing

2013-11-01

The recent idea of logical stochastic resonance is verified in synthetic gene networks induced by non-Gaussian noise. We realize the switching between two kinds of logic gates under optimal moderate noise intensity by varying two different tunable parameters in a single gene network. Furthermore, in order to obtain more logic operations, thus providing additional information processing capacity, we obtain in a two-dimensional toggle switch model two complementary logic gates and realize the transformation between two logic gates via the methods of changing different parameters. These simulated results contribute to improve the computational power and functionality of the networks.

High-Fidelity Quantum Logic Gates Using Trapped-Ion Hyperfine Qubits.

PubMed

Ballance, C J; Harty, T P; Linke, N M; Sepiol, M A; Lucas, D M

2016-08-05

We demonstrate laser-driven two-qubit and single-qubit logic gates with respective fidelities 99.9(1)% and 99.9934(3)%, significantly above the ≈99% minimum threshold level required for fault-tolerant quantum computation, using qubits stored in hyperfine ground states of calcium-43 ions held in a room-temperature trap. We study the speed-fidelity trade-off for the two-qubit gate, for gate times between 3.8  μs and 520  μs, and develop a theoretical error model which is consistent with the data and which allows us to identify the principal technical sources of infidelity.

Modeling and simulation of floating gate nanocrystal FET devices and circuits

NASA Astrophysics Data System (ADS)

Hasaneen, El-Sayed A. M.

The nonvolatile memory market has been growing very fast during the last decade, especially for mobile communication systems. The Semiconductor Industry Association International Technology Roadmap for Semiconductors states that the difficult challenge for nonvolatile semiconductor memories is to achieve reliable, low power, low voltage performance and high-speed write/erase. This can be achieved by aggressive scaling of the nonvolatile memory cells. Unfortunately, scaling down of conventional nonvolatile memory will further degrade the retention time due to the charge loss between the floating gate and drain/source contacts and substrate which makes conventional nonvolatile memory unattractive. Using nanocrystals as charge storage sites reduces dramatically the charge leakage through oxide defects and drain/source contacts. Floating gate nanocrystal nonvolatile memory, FG-NCNVM, is a candidate for future memory because it is advantageous in terms of high-speed write/erase, small size, good scalability, low-voltage, low-power applications, and the capability to store multiple bits per cell. Many studies regarding FG-NCNVMs have been published. Most of them have dealt with fabrication improvements of the devices and device characterizations. Due to the promising FG-NCNVM applications in integrated circuits, there is a need for circuit a simulation model to simulate the electrical characteristics of the floating gate devices. In this thesis, a FG-NCNVM circuit simulation model has been proposed. It is based on the SPICE BSIM simulation model. This model simulates the cell behavior during normal operation. Model validation results have been presented. The SPICE model shows good agreement with experimental results. Current-voltage characteristics, transconductance and unity gain frequency (fT) have been studied showing the effect of the threshold voltage shift (DeltaVth) due to nanocrystal charge on the device characteristics. The threshold voltage shift due to nanocrystal charge has a strong effect on the memory characteristics. Also, the programming operation of the memory cell has been investigated. The tunneling rate from quantum well channel to quantum dot (nanocrystal) gate is calculated. The calculations include various memory parameters, wavefunctions, and energies of quantum well channel and quantum dot gate. The use of floating gate nanocrystal memory as a transistor with a programmable threshold voltage has been demonstrated. The incorporation of FG-NCFETs to design programmable integrated circuit building blocks has been discussed. This includes the design of programmable current and voltage reference circuits. Finally, we demonstrated the design of tunable gain op-amp incorporating FG-NCFETs. Programmable integrated circuit building blocks can be used in intelligent analog and digital systems.

Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime

NASA Astrophysics Data System (ADS)

Swami, Yashu; Rai, Sanjeev

2017-02-01

The high leakage current in nano-meter regimes is becoming a significant portion of power dissipation in nano-MOSFET circuits as threshold voltage, channel length, and gate oxide thickness are scaled down to nano-meter range. Precise leakage current valuation and meticulous modeling of the same at nano-meter technology scale is an increasingly a critical work in designing the low power nano-MOSFET circuits. We present a specific compact model for sub-threshold regime leakage current in bulk driven nano-MOSFETs. The proposed logical model is instigated and executed into the latest updated PTM bulk nano-MOSFET model and is found to be in decent accord with technology-CAD simulation data. This paper also reviews various transistor intrinsic leakage mechanisms for nano-MOSFET exclusively in weak inversion, like drain-induced barricade lowering (DIBL), gate-induced drain leakage (GIDL), gate oxide tunneling (GOT) leakage etc. The root cause of the sub-surface leakage current is mainly due to the nano-scale short channel length causing source-drain coupling even in sub-threshold domain. Consequences leading to carriers triumphing the barricade between the source and drain. The enhanced model effectively considers the following parameter dependence in the account for better-quality value-added results like drain-to-source bias (VDS), gate-to-source bias (VGS), channel length (LG), source/drain junction depth (Xj), bulk doping concentration (NBULK), and operating temperature (Top).

Print Format Effects on ASVAB (Armed Services Vocational Aptitude Battery) Test Score Performance: Literature Review

DTIC Science & Technology

1989-08-01

1964), attention should be given to minimizing any adverse effects they may present in terms of test performance and possible distortion of test...was therefore reviewed to take this format difference into account in ASVAB norming. Boyle (1984) noted that the General Aptitude Test Batter , (GATE... cognitive paper-and-penci items such as those comprising the ASVAB. In one of the few articles directly concerned with test item format, Vanderplas and

Are Ca2+ channels targets of praziquantel action?

PubMed

Greenberg, Robert M

2005-01-01

Praziquantel is the current drug of choice for the control of schistosomiasis. It is highly effective against all species of schistosomes and shows minimal adverse effects. Though introduced for the treatment of schistosomiasis more than 20 years ago, the mode of action of praziquantel remains to be elucidated. This review will focus on advances in defining the molecular target of praziquantel action, with particular emphasis on recent work indicating an important role for voltage-gated calcium channels.

Energy reduction through voltage scaling and lightweight checking

NASA Astrophysics Data System (ADS)

Kadric, Edin

As the semiconductor roadmap reaches smaller feature sizes and the end of Dennard Scaling, design goals change, and managing the power envelope often dominates delay minimization. Voltage scaling remains a powerful tool to reduce energy. We find that it results in about 60% geomean energy reduction on top of other common low-energy optimizations with 22nm CMOS technology. However, when voltage is reduced, it becomes easier for noise and particle strikes to upset a node, potentially causing Silent Data Corruption (SDC). The 60% energy reduction, therefore, comes with a significant drop in reliability. Duplication with checking and triple-modular redundancy are traditional approaches used to combat transient errors, but spending 2--3x the energy for redundant computation can diminish or reverse the benefits of voltage scaling. As an alternative, we explore the opportunity to use checking operations that are cheaper than the base computation they are guarding. We devise a classification system for applications and their lightweight checking characteristics. In particular, we identify and evaluate the effectiveness of lightweight checks in a broad set of common tasks in scientific computing and signal processing. We find that the lightweight checks cost only a fraction of the base computation (0-25%) and allow us to recover the reliability losses from voltage scaling. Overall, we show about 50% net energy reduction without compromising reliability compared to operation at the nominal voltage. We use FPGAs (Field-Programmable Gate Arrays) in our work, although the same ideas can be applied to different systems. On top of voltage scaling, we explore other common low-energy techniques for FPGAs: transmission gates, gate boosting, power gating, low-leakage (high-Vth) processes, and dual-V dd architectures. We do not scale voltage for memories, so lower voltages help us reduce logic and interconnect energy, but not memory energy. At lower voltages, memories become dominant, and we get diminishing returns from continuing to scale voltage. To ensure that memories do not become a bottleneck, we also design an energy-robust FPGA memory architecture, which attempts to minimize communication energy due to mismatches between application and architecture. We do this alongside application parallelism tuning. We show our techniques on a wide range of applications, including a large real-time system used for Wide-Area Motion Imaging (WAMI).

Functional asymmetry and plasticity of electrical synapses interconnecting neurons through a 36-state model of gap junction channel gating

PubMed Central

Kraujalis, Tadas; Maciunas, Kestutis

2017-01-01

We combined the Hodgkin–Huxley equations and a 36-state model of gap junction channel gating to simulate electrical signal transfer through electrical synapses. Differently from most previous studies, our model can account for dynamic modulation of junctional conductance during the spread of electrical signal between coupled neurons. The model of electrical synapse is based on electrical properties of the gap junction channel encompassing two fast and two slow gates triggered by the transjunctional voltage. We quantified the influence of a difference in input resistances of electrically coupled neurons and instantaneous conductance–voltage rectification of gap junctions on an asymmetry of cell-to-cell signaling. We demonstrated that such asymmetry strongly depends on junctional conductance and can lead to the unidirectional transfer of action potentials. The simulation results also revealed that voltage spikes, which develop between neighboring cells during the spread of action potentials, can induce a rapid decay of junctional conductance, thus demonstrating spiking activity-dependent short-term plasticity of electrical synapses. This conclusion was supported by experimental data obtained in HeLa cells transfected with connexin45, which is among connexin isoforms expressed in neurons. Moreover, the model allowed us to replicate the kinetics of junctional conductance under different levels of intracellular concentration of free magnesium ([Mg2+]i), which was experimentally recorded in cells expressing connexin36, a major neuronal connexin. We demonstrated that such [Mg2+]i-dependent long-term plasticity of the electrical synapse can be adequately reproduced through the changes of slow gate parameters of the 36-state model. This suggests that some types of chemical modulation of gap junctions can be executed through the underlying mechanisms of voltage gating. Overall, the developed model accounts for direction-dependent asymmetry, as well as for short- and long-term plasticity of electrical synapses. Our modeling results demonstrate that such complex behavior of the electrical synapse is important in shaping the response of coupled neurons. PMID:28384220

SU-F-T-634: Feasibility Study of Respiratory Gated RapidArc SBRT Using a 6MV FFF Photon Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dou, K; Safaraz, M; Rodgers, J

Purpose: To conduct a feasibility study on retrospective respiratory gating and marker tracking for lung stereotactic body radiotherapy (SBRT) with a gated RapidArc delivery using a 6MV flattened filter free photon mode. Methods: A CIRS dynamic thorax phantom Model 008A with different inserts was used for treatment planning and respiratory gating. 4D CT had a free breathing simulation followed by a respiration gated, ten phased CT using a Philips Brilliance CT with a Varian RPM respiratory gating system. The internal target volume was created from the ten phase gated CT images, followed by exporting to a Varian Eclipse TPS v11more » for treatment planning on the free breath images. Both MIP and AIP were also generated for comparison of planning and target motion tracking. The planned dose was delivered with a 6MV FFF photon beam from a Varian TrueBeam accelerator. Gated target motion was also verified by tracking the implanted makers during delivery using continuous kV imaging in addition to CBCT, kV and MV localization and verification. Results: Gating was studied in three situations of lower, normal, and faster breathing at a respiratory cycle of 5, 15 and 25 breaths per minute, respectively. 4D treatment planning was performed at a normal breathing of 15 breaths per minute. The gated patterns obtained using the TrueBeam IR camera were compared with the planned ones while gating operation was added prior to delivery . Gating was realized only when the measured respiratory patterns matched to the planned ones. The gated target motion was verified within the tolerance by kV and MV imaging. Either free breathing CT or averaged CT images were studied to be good for image guidance to align the target. Conclusion: Gated RapidArc SBRT delivered with a 6MV FFF photon beam is realized using a dynamic lung phantom.« less

Model-based versus specific dosimetry in diagnostic context: Comparison of three dosimetric approaches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marcatili, S., E-mail: sara.marcatili@inserm.fr; Villoing, D.; Mauxion, T.

Purpose: The dosimetric assessment of novel radiotracers represents a legal requirement in most countries. While the techniques for the computation of internal absorbed dose in a therapeutic context have made huge progresses in recent years, in a diagnostic scenario the absorbed dose is usually extracted from model-based lookup tables, most often derived from International Commission on Radiological Protection (ICRP) or Medical Internal Radiation Dose (MIRD) Committee models. The level of approximation introduced by these models may impact the resulting dosimetry. The aim of this work is to establish whether a more refined approach to dosimetry can be implemented in nuclearmore » medicine diagnostics, by analyzing a specific case. Methods: The authors calculated absorbed doses to various organs in six healthy volunteers administered with flutemetamol ({sup 18}F) injection. Each patient underwent from 8 to 10 whole body 3D PET/CT scans. This dataset was analyzed using a Monte Carlo (MC) application developed in-house using the toolkit GATE that is capable to take into account patient-specific anatomy and radiotracer distribution at the voxel level. They compared the absorbed doses obtained with GATE to those calculated with two commercially available software: OLINDA/EXM and STRATOS implementing a dose voxel kernel convolution approach. Results: Absorbed doses calculated with GATE were higher than those calculated with OLINDA. The average ratio between GATE absorbed doses and OLINDA’s was 1.38 ± 0.34 σ (from 0.93 to 2.23). The discrepancy was particularly high for the thyroid, with an average GATE/OLINDA ratio of 1.97 ± 0.83 σ for the six patients. Differences between STRATOS and GATE were found to be higher. The average ratio between GATE and STRATOS absorbed doses was 2.51 ± 1.21 σ (from 1.09 to 6.06). Conclusions: This study demonstrates how the choice of the absorbed dose calculation algorithm may introduce a bias when gamma radiations are of importance, as is the case in nuclear medicine diagnostics.« less

Resting electrocardiogram and stress myocardial perfusion imaging in the determination of left ventricular systolic function: an assessment enhancing the performance of gated SPET.

PubMed

Moralidis, Efstratios; Spyridonidis, Tryfon; Arsos, Georgios; Skeberis, Vassilios; Anagnostopoulos, Constantinos; Gavrielidis, Stavros

2010-01-01

This study aimed to determine systolic dysfunction and estimate resting left ventricular ejection fraction (LVEF) from information collected during routine evaluation of patients with suspected or known coronary heart disease. This approach was then compared to gated single photon emission tomography (SPET). Patients having undergone stress (201)Tl myocardial perfusion imaging followed by equilibrium radionuclide angiography (ERNA) were separated into derivation (n=954) and validation (n=309) groups. Logistic regression analysis was used to develop scoring systems, containing clinical, electrocardiographic (ECG) and scintigraphic data, for the discrimination of an ERNA-LVEF<0.50. Linear regression analysis provided equations predicting ERNA-LVEF from those scores. In 373 patients LVEF was also assessed with (201)Tl gated SPET. Our results showed that an ECG-Scintigraphic scoring system was the best simple predictor of an ERNA-LVEF<0.50 in comparison to other models including ECG, clinical and scintigraphic variables in both the derivation and validation subpopulations. A simple linear equation was derived also for the assessment of resting LVEF from the ECG-Scintigraphic model. Equilibrium radionuclide angiography-LVEF had a good correlation with the ECG-Scintigraphic model LVEF (r=0.716, P=0.000), (201)Tl gated SPET LVEF (r=0.711, P=0.000) and the average LVEF from those assessments (r=0.796, P=0.000). The Bland-Altman statistic (mean+/-2SD) provided values of 0.001+/-0.176, 0.071+/-0.196 and 0.040+/-0.152, respectively. The average LVEF was a better discriminator of systolic dysfunction than gated SPET-LVEF in receiver operating characteristic (ROC) analysis and identified more patients (89%) with a

GATE: a simulation toolkit for PET and SPECT.

PubMed

Jan, S; Santin, G; Strul, D; Staelens, S; Assié, K; Autret, D; Avner, S; Barbier, R; Bardiès, M; Bloomfield, P M; Brasse, D; Breton, V; Bruyndonckx, P; Buvat, I; Chatziioannou, A F; Choi, Y; Chung, Y H; Comtat, C; Donnarieix, D; Ferrer, L; Glick, S J; Groiselle, C J; Guez, D; Honore, P F; Kerhoas-Cavata, S; Kirov, A S; Kohli, V; Koole, M; Krieguer, M; van der Laan, D J; Lamare, F; Largeron, G; Lartizien, C; Lazaro, D; Maas, M C; Maigne, L; Mayet, F; Melot, F; Merheb, C; Pennacchio, E; Perez, J; Pietrzyk, U; Rannou, F R; Rey, M; Schaart, D R; Schmidtlein, C R; Simon, L; Song, T Y; Vieira, J M; Visvikis, D; Van de Walle, R; Wieërs, E; Morel, C

2004-10-07

Monte Carlo simulation is an essential tool in emission tomography that can assist in the design of new medical imaging devices, the optimization of acquisition protocols and the development or assessment of image reconstruction algorithms and correction techniques. GATE, the Geant4 Application for Tomographic Emission, encapsulates the Geant4 libraries to achieve a modular, versatile, scripted simulation toolkit adapted to the field of nuclear medicine. In particular, GATE allows the description of time-dependent phenomena such as source or detector movement, and source decay kinetics. This feature makes it possible to simulate time curves under realistic acquisition conditions and to test dynamic reconstruction algorithms. This paper gives a detailed description of the design and development of GATE by the OpenGATE collaboration, whose continuing objective is to improve, document and validate GATE by simulating commercially available imaging systems for PET and SPECT. Large effort is also invested in the ability and the flexibility to model novel detection systems or systems still under design. A public release of GATE licensed under the GNU Lesser General Public License can be downloaded at http:/www-lphe.epfl.ch/GATE/. Two benchmarks developed for PET and SPECT to test the installation of GATE and to serve as a tutorial for the users are presented. Extensive validation of the GATE simulation platform has been started, comparing simulations and measurements on commercially available acquisition systems. References to those results are listed. The future prospects towards the gridification of GATE and its extension to other domains such as dosimetry are also discussed.

GATE - Geant4 Application for Tomographic Emission: a simulation toolkit for PET and SPECT

PubMed Central

Jan, S.; Santin, G.; Strul, D.; Staelens, S.; Assié, K.; Autret, D.; Avner, S.; Barbier, R.; Bardiès, M.; Bloomfield, P. M.; Brasse, D.; Breton, V.; Bruyndonckx, P.; Buvat, I.; Chatziioannou, A. F.; Choi, Y.; Chung, Y. H.; Comtat, C.; Donnarieix, D.; Ferrer, L.; Glick, S. J.; Groiselle, C. J.; Guez, D.; Honore, P.-F.; Kerhoas-Cavata, S.; Kirov, A. S.; Kohli, V.; Koole, M.; Krieguer, M.; van der Laan, D. J.; Lamare, F.; Largeron, G.; Lartizien, C.; Lazaro, D.; Maas, M. C.; Maigne, L.; Mayet, F.; Melot, F.; Merheb, C.; Pennacchio, E.; Perez, J.; Pietrzyk, U.; Rannou, F. R.; Rey, M.; Schaart, D. R.; Schmidtlein, C. R.; Simon, L.; Song, T. Y.; Vieira, J.-M.; Visvikis, D.; Van de Walle, R.; Wieërs, E.; Morel, C.

2012-01-01

Monte Carlo simulation is an essential tool in emission tomography that can assist in the design of new medical imaging devices, the optimization of acquisition protocols, and the development or assessment of image reconstruction algorithms and correction techniques. GATE, the Geant4 Application for Tomographic Emission, encapsulates the Geant4 libraries to achieve a modular, versatile, scripted simulation toolkit adapted to the field of nuclear medicine. In particular, GATE allows the description of time-dependent phenomena such as source or detector movement, and source decay kinetics. This feature makes it possible to simulate time curves under realistic acquisition conditions and to test dynamic reconstruction algorithms. This paper gives a detailed description of the design and development of GATE by the OpenGATE collaboration, whose continuing objective is to improve, document, and validate GATE by simulating commercially available imaging systems for PET and SPECT. Large effort is also invested in the ability and the flexibility to model novel detection systems or systems still under design. A public release of GATE licensed under the GNU Lesser General Public License can be downloaded at the address http://www-lphe.ep.ch/GATE/. Two benchmarks developed for PET and SPECT to test the installation of GATE and to serve as a tutorial for the users are presented. Extensive validation of the GATE simulation platform has been started, comparing simulations and measurements on commercially available acquisition systems. References to those results are listed. The future prospects toward the gridification of GATE and its extension to other domains such as dosimetry are also discussed. PMID:15552416

Effectiveness Using Circular Fibre Steel Flap Gate As a Control Structure Towards the Hydraulic Characteristics in Open Channel

NASA Astrophysics Data System (ADS)

Adib, M. R. M.; Amirza, A. R. M.; Wardah, T.; Junaidah, A.

2016-07-01

Hydraulic control gate structure plays an important role in regulating the flow of water in river, canal or water reservoir. One of the most appropriate structures in term of resolving the problem of flood occured is the construction of circular fibre steel flap gate. Therefore, an experiment has been conducted by using an open channel model at laboratory. In this case, hydraulic jump and backwater were the method to determined the hydraulic characteristics of circular fibre steel flap gate in an open channel model. From the experiment, the opening angle of flap gate can receive discharges with the highest flow rate of 0.035 m3/s with opening angle was 47°. The type of jump that occurs at the slope of 1/200 for a distance of 5.0 m is a standing jump or undulating wave. The height of the backwater can be identified based on the differences of specific force which is specific force before jump, F1 and specific force after jump, F2 from the formation of backwater. Based on the research conducted, the tendency of incident backwater wave occurred was high in every distance of water control location from water inlet is flap slope and the slope of 1/300 which is 0.84 m/s and 0.75 m/s of celerity in open channel model.

Hydraulic Modeling and Evolutionary Optimization for Enhanced Real-Time Decision Support of Combined Sewer Overflows

NASA Astrophysics Data System (ADS)

Zimmer, A. L.; Minsker, B. S.; Schmidt, A. R.; Ostfeld, A.

2011-12-01

Real-time mitigation of combined sewer overflows (CSOs) requires evaluation of multiple operational strategies during rapidly changing rainfall events. Simulation models for hydraulically complex systems can effectively provide decision support for short time intervals when coupled with efficient optimization. This work seeks to reduce CSOs for a test case roughly based on the North Branch of the Chicago Tunnel and Reservoir Plan (TARP), which is operated by the Metropolitan Water Reclamation District of Greater Chicago (MWRDGC). The North Branch tunnel flows to a junction with the main TARP system. The Chicago combined sewer system alleviates potential CSOs by directing high interceptor flows through sluice gates and dropshafts to a deep tunnel. Decision variables to control CSOs consist of sluice gate positions that control water flow to the tunnel as well as a treatment plant pumping rate that lowers interceptor water levels. A physics-based numerical model is used to simulate the hydraulic effects of changes in the decision variables. The numerical model is step-wise steady and conserves water mass and momentum at each time step by iterating through a series of look-up tables. The look-up tables are constructed offline to avoid extensive real-time calculations, and describe conduit storage and water elevations as a function of flow. A genetic algorithm (GA) is used to minimize CSOs at each time interval within a moving horizon framework. Decision variables are coded at 15-minute increments and GA solutions are two hours in duration. At each 15-minute interval, the algorithm identifies a good solution for a two-hour rainfall forecast. Three GA modifications help reduce optimization time. The first adjustment reduces the search alphabet by eliminating sluice gate positions that do not influence overflow volume. The second GA retains knowledge of the best decision at the previous interval by shifting the genes in the best previous sequence to initialize search at the new interval. The third approach is a micro-GA with a small population size and high diversity. Current tunnel operations attempt to avoid dropshaft geysers by simultaneously closing all sluice gates when the downstream end of the deep tunnel pressurizes. In an effort to further reduce CSOs, this research introduces a constraint that specifies a maximum allowable tunnel flow to prevent pressurization. The downstream junction depth is bounded by two flow conditions: a low tunnel water level represents inflow from the main system only, while a higher level includes main system flow as well as all possible North Branch inflow. If the lower of the two tunnel levels is pressurized, no North Branch flow is allowed to enter the junction. If only the higher level pressurizes, a linear rating is used to restrict the total North Branch flow below the volume that pressurizes the boundary. The numerical model is successfully calibrated to EPA SWMM and efficiently portrays system hydraulics in real-time. Results on the three GA approaches as well as impacts of various policies for the downstream constraint will be presented at the conference.

Dual-gate GaAs FET switches

NASA Astrophysics Data System (ADS)

Vorhaus, J. L.; Fabian, W.; Ng, P. B.; Tajima, Y.

1981-02-01

A set of multi-pole, multi-throw switch devices consisting of dual-gate GaAs FET's is described. Included are single-pole, single-throw (SPST), double-pole, double-throw (DPDT), and single-pole four-throw (SP4T) switches. Device fabrication and measurement techniques are discussed. The device models for these switches were based on an equivalent circuit of a dual-gate FET. The devices were found to have substantial gain in X-band and low Ku-band.

p53 activated by AND gate genetic circuit under radiation and hypoxia for targeted cancer gene therapy

PubMed Central

Ding, Miao; Li, Rong; He, Rong; Wang, Xingyong; Yi, Qijian; Wang, Weidong

2015-01-01

Radio-activated gene therapy has been developed as a novel therapeutic strategy against cancer; however, expression of therapeutic gene in peritumoral tissues will result in unacceptable toxicity to normal cells. To restrict gene expression in targeted tumor mass, we used hypoxia and radiation tolerance features of tumor cells to develop a synthetic AND gate genetic circuit through connecting radiation sensitivity promoter cArG6, heat shock response elements SNF1, HSF1 and HSE4 with retroviral vector plxsn. Their construction and dynamic activity process were identified through downstream enhanced green fluorescent protein and wtp53 expression in non-small cell lung cancer A549 cells and in a nude mice model. The result showed that AND gate genetic circuit could be activated by lower required radiation dose (6 Gy) and after activated, AND gate could induce significant apoptosis effects and growth inhibition of cancer cells in vitro and in vivo. The radiation- and hypoxia-activated AND gate genetic circuit, which could lead to more powerful target tumoricidal activity represented a promising strategy for both targeted and effective gene therapy of human lung adenocarcinoma and low dose activation character of the AND gate genetic circuit implied that this model could be further exploited to decrease side-effects of clinical radiation therapy. PMID:26177264

Equilibrium charge fluctuations of a charge detector and its effect on a nearby quantum dot

NASA Astrophysics Data System (ADS)

Ruiz-Tijerina, David; Vernek, Edson; Ulloa, Sergio

2014-03-01

We study the Kondo state of a spin-1/2 quantum dot (QD), in close proximity to a quantum point contact (QPC) charge detector near the conductance regime of the 0.7 anomaly. The electrostatic coupling between the QD and QPC introduces a remote gate on the QD level, which varies with the QPC gate voltage. Furthermore, models for the 0.7 anomaly [Y. Meir et al., PRL 89,196802(2002)] suggest that the QPC lodges a Kondo-screened level with charge-correlated hybridization, which may be also affected by capacitive coupling to the QD, giving rise to a competition between the two Kondo ground states. We model the QD-QPC system as two capacitively-coupled Kondo impurities, and explore the zero-bias transport of both the QD and the QPC for different local gate voltages and coupling strengths, using the numerical renormalization group and variational methods. We find that the capacitive coupling produces a remote gating effect, non-monotonic in the gate voltages, which reduces the gate voltage window for Kondo screening in either impurity, and which can also drive a quantum phase transition out of the Kondo regime. Our study is carried out for intermediate coupling strengths, and as such is highly relevant to experiments; particularly, to recent studies of decoherence effects on QDs. Supported by MWN/CIAM and NSF PIRE.

External Barium Affects the Gating of KCNQ1 Potassium Channels and Produces a Pore Block via Two Discrete Sites

PubMed Central

Gibor, Gilad; Yakubovich, Daniel; Peretz, Asher; Attali, Bernard

2004-01-01

The pore properties and the reciprocal interactions between permeant ions and the gating of KCNQ channels are poorly understood. Here we used external barium to investigate the permeation characteristics of homomeric KCNQ1 channels. We assessed the Ba2+ binding kinetics and the concentration and voltage dependence of Ba2+ steady-state block. Our results indicate that extracellular Ba2+ exerts a series of complex effects, including a voltage-dependent pore blockade as well as unique gating alterations. External barium interacts with the permeation pathway of KCNQ1 at two discrete and nonsequential sites. (a) A slow deep Ba2+ site that occludes the channel pore and could be simulated by a model of voltage-dependent block. (b) A fast superficial Ba2+ site that barely contributes to channel block and mostly affects channel gating by shifting rightward the voltage dependence of activation, slowing activation, speeding up deactivation kinetics, and inhibiting channel inactivation. A model of voltage-dependent block cannot predict the complex impact of Ba2+ on channel gating in low external K+ solutions. Ba2+ binding to this superficial site likely modifies the gating transitions states of KCNQ1. Both sites appear to reside in the permeation pathway as high external K+ attenuates Ba2+ inhibition of channel conductance and abolishes its impact on channel gating. Our data suggest that despite the high degree of homology of the pore region among the various K+ channels, KCNQ1 channels display significant structural and functional uniqueness. PMID:15226366

Off-line wafer level reliability control: unique measurement method to monitor the lifetime indicator of gate oxide validated within bipolar/CMOS/DMOS technology

NASA Astrophysics Data System (ADS)

Gagnard, Xavier; Bonnaud, Olivier

2000-08-01

We have recently published a paper on a new rapid method for the determination of the lifetime of the gate oxide involved in a Bipolar/CMOS/DMOS technology (BCD). Because this previous method was based on a current measurement with gate voltage as a parameter needing several stress voltages, it was applied only by lot sampling. Thus, we tried to find an indicator in order to monitor the gate oxide lifetime during the wafer level parametric test and involving only one measurement of the device on each wafer test cell. Using the Weibull law and Crook model, combined with our recent model, we have developed a new test method needing only one electrical measurement of MOS capacitor to monitor the quality of the gate oxide. Based also on a current measurement, the parameter is the lifetime indicator of the gate oxide. From the analysis of several wafers, we gave evidence of the possibility to detect a low performance wafer, which corresponds to the infantile failure on the Weibull plot. In order to insert this new method in the BCD parametric program, a parametric flowchart was established. This type of measurement is an important challenges, because the actual measurements, breakdown charge, Qbd, and breakdown electric field, Ebd, at parametric level and Ebd and interface states density, Dit during the process cannot guarantee the gate oxide lifetime all along fabrication process. This indicator measurement is the only one, which predicts the lifetime decrease.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huguet, Florence; Department of Radiation Oncology, Hôpitaux Universitaires Paris Est, Hôpital Tenon, University Paris VI, Paris; Yorke, Ellen D.

Purpose: To assess intrafractional positional variations of pancreatic tumors using 4-dimensional computed tomography (4D-CT), their impact on gross tumor volume (GTV) coverage, the reliability of biliary stent, fiducial seeds, and the real-time position management (RPM) external marker as tumor surrogates for setup of respiratory gated treatment, and to build a correlative model of tumor motion. Methods and Materials: We analyzed the respiration-correlated 4D-CT images acquired during simulation of 36 patients with either a biliary stent (n=16) or implanted fiducials (n=20) who were treated with RPM respiratory gated intensity modulated radiation therapy for locally advanced pancreatic cancer. Respiratory displacement relative to end-exhalationmore » was measured for the GTV, the biliary stent, or fiducial seeds, and the RPM marker. The results were compared between the full respiratory cycle and the gating interval. Linear mixed model was used to assess the correlation of GTV motion with the potential surrogate markers. Results: The average ± SD GTV excursions were 0.3 ± 0.2 cm in the left-right direction, 0.6 ± 0.3 cm in the anterior-posterior direction, and 1.3 ± 0.7 cm in the superior-inferior direction. Gating around end-exhalation reduced GTV motion by 46% to 60%. D95% was at least the prescribed 56 Gy in 76% of patients. GTV displacement was associated with the RPM marker, the biliary stent, and the fiducial seeds. The correlation was better with fiducial seeds and with biliary stent. Conclusions: Respiratory gating reduced the margin necessary for radiation therapy for pancreatic tumors. GTV motion was well correlated with biliary stent or fiducial seed displacements, validating their use as surrogates for daily assessment of GTV position during treatment. A patient-specific internal target volume based on 4D-CT is recommended both for gated and not-gated treatment; otherwise, our model can be used to predict the degree of GTV motion.« less

XFEL structures of the influenza M2 proton channel: Room temperature water networks and insights into proton conduction

DOE PAGES

Thomaston, Jessica L.; Woldeyes, Rahel A.; Nakane, Takanori; ...

2017-08-23

The M2 proton channel of influenza A is a drug target that is essential for the reproduction of the flu virus. It is also a model system for the study of selective, unidirectional proton transport across a membrane. Ordered water molecules arranged in “wires” inside the channel pore have been proposed to play a role in both the conduction of protons to the four gating His37 residues and the stabilization of multiple positive charges within the channel. To visualize the solvent in the pore of the channel at room temperature while minimizing the effects of radiation damage, data were collectedmore » to a resolution of 1.4 Å using an X-ray free-electron laser (XFEL) at three different pH conditions: pH 5.5, pH 6.5, and pH 8.0. Data were collected on the Inward open state, which is an intermediate that accumulates at high protonation of the His37 tetrad. At pH 5.5, a continuous hydrogen-bonded network of water molecules spans the vertical length of the channel, consistent with a Grotthuss mechanism model for proton transport to the His37 tetrad. This ordered solvent at pH 5.5 could act to stabilize the positive charges that build up on the gating His37 tetrad during the proton conduction cycle. The number of ordered pore waters decreases at pH 6.5 and 8.0, where the Inward open state is less stable. Furthermore, these studies provide a graphical view of the response of water to a change in charge within a restricted channel environment.« less

XFEL structures of the influenza M2 proton channel: Room temperature water networks and insights into proton conduction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thomaston, Jessica L.; Woldeyes, Rahel A.; Nakane, Takanori

The M2 proton channel of influenza A is a drug target that is essential for the reproduction of the flu virus. It is also a model system for the study of selective, unidirectional proton transport across a membrane. Ordered water molecules arranged in “wires” inside the channel pore have been proposed to play a role in both the conduction of protons to the four gating His37 residues and the stabilization of multiple positive charges within the channel. To visualize the solvent in the pore of the channel at room temperature while minimizing the effects of radiation damage, data were collectedmore » to a resolution of 1.4 Å using an X-ray free-electron laser (XFEL) at three different pH conditions: pH 5.5, pH 6.5, and pH 8.0. Data were collected on the Inward open state, which is an intermediate that accumulates at high protonation of the His37 tetrad. At pH 5.5, a continuous hydrogen-bonded network of water molecules spans the vertical length of the channel, consistent with a Grotthuss mechanism model for proton transport to the His37 tetrad. This ordered solvent at pH 5.5 could act to stabilize the positive charges that build up on the gating His37 tetrad during the proton conduction cycle. The number of ordered pore waters decreases at pH 6.5 and 8.0, where the Inward open state is less stable. Furthermore, these studies provide a graphical view of the response of water to a change in charge within a restricted channel environment.« less

Gating of Connexin Channels by transjunctional-voltage: Conformations and models of open and closed states.

PubMed

Bargiello, Thaddeus A; Oh, Seunghoon; Tang, Qingxiu; Bargiello, Nicholas K; Dowd, Terry L; Kwon, Taekyung

2018-01-01

Voltage is an important physiologic regulator of channels formed by the connexin gene family. Connexins are unique among ion channels in that both plasma membrane inserted hemichannels (undocked hemichannels) and intercellular channels (aggregates of which form gap junctions) have important physiological roles. The hemichannel is the fundamental unit of gap junction voltage-gating. Each hemichannel displays two distinct voltage-gating mechanisms that are primarily sensitive to a voltage gradient formed along the length of the channel pore (the transjunctional voltage) rather than sensitivity to the absolute membrane potential (V m or V i-o ). These transjunctional voltage dependent processes have been termed V j - or fast-gating and loop- or slow-gating. Understanding the mechanism of voltage-gating, defined as the sequence of voltage-driven transitions that connect open and closed states, first and foremost requires atomic resolution models of the end states. Although ion channels formed by connexins were among the first to be characterized structurally by electron microscopy and x-ray diffraction in the early 1980's, subsequent progress has been slow. Much of the current understanding of the structure-function relations of connexin channels is based on two crystal structures of Cx26 gap junction channels. Refinement of crystal structure by all-atom molecular dynamics and incorporation of charge changing protein modifications has resulted in an atomic model of the open state that arguably corresponds to the physiologic open state. Obtaining validated atomic models of voltage-dependent closed states is more challenging, as there are currently no methods to solve protein structure while a stable voltage gradient is applied across the length of an oriented channel. It is widely believed that the best approach to solve the atomic structure of a voltage-gated closed ion channel is to apply different but complementary experimental and computational methods and to use the resulting information to derive a consensus atomic structure that is then subjected to rigorous validation. In this paper, we summarize our efforts to obtain and validate atomic models of the open and voltage-driven closed states of undocked connexin hemichannels. This article is part of a Special Issue entitled: Gap Junction Proteins edited by Jean Claude Herve. Copyright © 2017 Elsevier B.V. All rights reserved.

Assessing Tactical Scheduler Options for Time-Based Surface Metering

NASA Technical Reports Server (NTRS)

Zelinski, Shannon; Windhorst, Robert

2017-01-01

NASA is committed to demonstrating a concept of integrated arrival, departure, and surface operations by 2020 under the Airspace Technology Demonstration 2 (ATD2) sub-project. This will be accomplished starting with a demonstration of flight specific time-based departure metering at Charlotte Douglass International Airport (CLT). ATD2 tactical metering capability is based on NASAs Spot And Runway Departure Advisor (SARDA) which has been tested successfully in human-in-the-loop simulations of CLT. SARDA makes use of surface surveillance data and surface modeling to estimate the earliest takeoff time for each flight active on the airport surface or ready for pushback from the gate. The system then schedules each flight to its assigned runway in order of earliest takeoff time and assigns a target pushback time, displayed to ramp controllers as an advisory gate hold time. The objective of this method of departure metering is to move as much delay as possible to the gate to minimize surface congestion and engine on-time, while keeping sufficient pressure on the runway to maintain throughput. This flight specific approached enables greater flight efficiency and predictability, facilitating trajectory-based operations and surface-airspace integration, which ATD2 aims to achieve.Throughout ATD2 project formulation and system development, researchers have continuously engaged with stakeholders and future users, uncovering key system requirements for tactical metering that SARDA did not address. The SARDA scheduler is updated every 10 seconds using real-time surface surveillance data to ensure the most up-to-date information is used to predict runway usage. However, rapid updates also open the potential for fluctuating advisories, which Ramp controllers at a busy airport like CLT find unacceptable. Therefore, ATD2 tactical metering requires that all advisories freeze once flights are ready so that Ramp controllers may communicate a single hold time when responding to pilot ready calls.

Voltage-Gated Calcium Influx Modifies Cholinergic Inhibition of Inner Hair Cells in the Immature Rat Cochlea.

PubMed

Zachary, Stephen; Nowak, Nathaniel; Vyas, Pankhuri; Bonanni, Luke; Fuchs, Paul Albert

2018-06-20

Until postnatal day (P) 12, inner hair cells of the rat cochlea are invested with both afferent and efferent synaptic connections. With the onset of hearing at P12, the efferent synapses disappear, and afferent (ribbon) synapses operate with greater efficiency. This change coincides with increased expression of voltage-gated potassium channels, the loss of calcium-dependent electrogenesis, and the onset of graded receptor potentials driven by sound. The transient efferent synapses include near-membrane postsynaptic cisterns thought to regulate calcium influx through the hair cell's α9-containing and α10-containing nicotinic acetylcholine receptors. This influx activates small-conductance Ca 2+ -activated K + (SK) channels. Serial-section electron microscopy of inner hair cells from two 9-d-old (male) rat pups revealed many postsynaptic efferent cisterns and presynaptic afferent ribbons whose average minimal separation in five cells ranged from 1.1 to 1.7 μm. Efferent synaptic function was studied in rat pups (age, 7-9 d) of either sex. The duration of these SK channel-mediated IPSCs was increased by enhanced calcium influx through L-type voltage-gated channels, combined with ryanodine-sensitive release from internal stores-presumably the near-membrane postsynaptic cistern. These data support the possibility that inner hair cell calcium electrogenesis modulates the efficacy of efferent inhibition during the maturation of inner hair cell synapses. SIGNIFICANCE STATEMENT Strict calcium buffering is essential for cellular function. This problem is especially acute for compact hair cells where increasing cytoplasmic calcium promotes the opposing functions of closely adjoining afferent and efferent synapses. The near-membrane postsynaptic cistern at efferent synapses segregates synaptic calcium signals by acting as a dynamic calcium store. The hair cell serves as an informative model for synapses with postsynaptic cisterns (C synapses) found in central neurons. Copyright © 2018 the authors 0270-6474/18/385677-11$15.00/0.

Production of Superoxide in Bacteria Is Stress- and Cell State-Dependent: A Gating-Optimized Flow Cytometry Method that Minimizes ROS Measurement Artifacts with Fluorescent Dyes.

PubMed

McBee, Megan E; Chionh, Yok H; Sharaf, Mariam L; Ho, Peiying; Cai, Maggie W L; Dedon, Peter C

2017-01-01

The role of reactive oxygen species (ROS) in microbial metabolism and stress response has emerged as a major theme in microbiology and infectious disease. Reactive fluorescent dyes have the potential to advance the study of ROS in the complex intracellular environment, especially for high-content and high-throughput analyses. However, current dye-based approaches to measuring intracellular ROS have the potential for significant artifacts. Here, we describe a robust platform for flow cytometric quantification of ROS in bacteria using fluorescent dyes, with ROS measurements in 10s-of-1000s of individual cells under a variety of conditions. False positives and variability among sample types (e.g., bacterial species, stress conditions) are reduced with a flexible four-step gating scheme that accounts for side- and forward-scattered light (morphological changes), background fluorescence, DNA content, and dye uptake to identify cells producing ROS. Using CellROX Green dye with Escherichia coli, Mycobacterium smegmatis , and Mycobacterium bovis BCG as diverse model bacteria, we show that (1) the generation of a quantifiable CellROX Green signal for superoxide, but not hydrogen peroxide-induced hydroxyl radicals, validates this dye as a superoxide detector; (2) the level of dye-detectable superoxide does not correlate with cytotoxicity or antibiotic sensitivity; (3) the non-replicating, antibiotic tolerant state of nutrient-deprived mycobacteria is associated with high levels of superoxide; and (4) antibiotic-induced production of superoxide is idiosyncratic with regard to both the species and the physiological state of the bacteria. We also show that the gating method is applicable to other fluorescent indicator dyes, such as the 5-carboxyfluorescein diacetate acetoxymethyl ester and 5-cyano-2,3-ditolyl tetrazolium chloride for cellular esterase and reductive respiratory activities, respectively. These results demonstrate that properly controlled flow cytometry coupled with fluorescent probes provides precise and accurate quantitative analysis of ROS generation and metabolic changes in stressed bacteria.

Controlling Working Memory Operations by Selective Gating: The Roles of Oscillations and Synchrony

PubMed Central

Dipoppa, Mario; Szwed, Marcin; Gutkin, Boris S.

2016-01-01

Working memory (WM) is a primary cognitive function that corresponds to the ability to update, stably maintain, and manipulate short-term memory (ST M) rapidly to perform ongoing cognitive tasks. A prevalent neural substrate of WM coding is persistent neural activity, the property of neurons to remain active after having been activated by a transient sensory stimulus. This persistent activity allows for online maintenance of memory as well as its active manipulation necessary for task performance. WM is tightly capacity limited. Therefore, selective gating of sensory and internally generated information is crucial for WM function. While the exact neural substrate of selective gating remains unclear, increasing evidence suggests that it might be controlled by modulating ongoing oscillatory brain activity. Here, we review experiments and models that linked selective gating, persistent activity, and brain oscillations, putting them in the more general mechanistic context of WM. We do so by defining several operations necessary for successful WM function and then discussing how such operations may be carried out by mechanisms suggested by computational models. We specifically show how oscillatory mechanisms may provide a rapid and flexible active gating mechanism for WM operations. PMID:28154616

Current–phase relations of few-mode InAs nanowire Josephson junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spanton, Eric M.; Deng, Mingtang; Vaitiekėnas, Saulius

Gate-tunable semiconductor nanowires with superconducting leads have great potential for quantum computation and as model systems for mesoscopic Josephson junctions. The supercurrent, I, versus the phase, Φ, across the junction is called the current–phase relation (CPR). It can reveal not only the amplitude of the critical current, but also the number of modes and their transmission. Here, we measured the CPR of many individual InAs nanowire Josephson junctions, one junction at a time. Both the amplitude and shape of the CPR varied between junctions, with small critical currents and skewed CPRs indicating few-mode junctions with high transmissions. In a gate-tunablemore » junction, we found that the CPR varied with gate voltage: near the onset of supercurrent, we observed behaviour consistent with resonant tunnelling through a single, highly transmitting mode. The gate dependence is consistent with modelled subband structure that includes an effective tunnelling barrier due to an abrupt change in the Fermi level at the boundary of the gate-tuned region. These measurements of skewed, tunable, few-mode CPRs are promising both for applications that require anharmonic junctions and for Majorana readout proposals.« less

Time-Gated Raman Spectroscopy for Quantitative Determination of Solid-State Forms of Fluorescent Pharmaceuticals.

PubMed

Lipiäinen, Tiina; Pessi, Jenni; Movahedi, Parisa; Koivistoinen, Juha; Kurki, Lauri; Tenhunen, Mari; Yliruusi, Jouko; Juppo, Anne M; Heikkonen, Jukka; Pahikkala, Tapio; Strachan, Clare J

2018-04-03

Raman spectroscopy is widely used for quantitative pharmaceutical analysis, but a common obstacle to its use is sample fluorescence masking the Raman signal. Time-gating provides an instrument-based method for rejecting fluorescence through temporal resolution of the spectral signal and allows Raman spectra of fluorescent materials to be obtained. An additional practical advantage is that analysis is possible in ambient lighting. This study assesses the efficacy of time-gated Raman spectroscopy for the quantitative measurement of fluorescent pharmaceuticals. Time-gated Raman spectroscopy with a 128 × (2) × 4 CMOS SPAD detector was applied for quantitative analysis of ternary mixtures of solid-state forms of the model drug, piroxicam (PRX). Partial least-squares (PLS) regression allowed quantification, with Raman-active time domain selection (based on visual inspection) improving performance. Model performance was further improved by using kernel-based regularized least-squares (RLS) regression with greedy feature selection in which the data use in both the Raman shift and time dimensions was statistically optimized. Overall, time-gated Raman spectroscopy, especially with optimized data analysis in both the spectral and time dimensions, shows potential for sensitive and relatively routine quantitative analysis of photoluminescent pharmaceuticals during drug development and manufacturing.

Current–phase relations of few-mode InAs nanowire Josephson junctions

DOE PAGES

Spanton, Eric M.; Deng, Mingtang; Vaitiekėnas, Saulius; ...

2017-08-14

Gate-tunable semiconductor nanowires with superconducting leads have great potential for quantum computation and as model systems for mesoscopic Josephson junctions. The supercurrent, I, versus the phase, Φ, across the junction is called the current–phase relation (CPR). It can reveal not only the amplitude of the critical current, but also the number of modes and their transmission. Here, we measured the CPR of many individual InAs nanowire Josephson junctions, one junction at a time. Both the amplitude and shape of the CPR varied between junctions, with small critical currents and skewed CPRs indicating few-mode junctions with high transmissions. In a gate-tunablemore » junction, we found that the CPR varied with gate voltage: near the onset of supercurrent, we observed behaviour consistent with resonant tunnelling through a single, highly transmitting mode. The gate dependence is consistent with modelled subband structure that includes an effective tunnelling barrier due to an abrupt change in the Fermi level at the boundary of the gate-tuned region. These measurements of skewed, tunable, few-mode CPRs are promising both for applications that require anharmonic junctions and for Majorana readout proposals.« less

Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2

NASA Astrophysics Data System (ADS)

Palade, C.; Lepadatu, A. M.; Slav, A.; Lazanu, S.; Teodorescu, V. S.; Stoica, T.; Ciurea, M. L.

2018-01-01

Trilayer memory capacitors with Ge nanocrystals (NCs) floating gate in HfO2 were obtained by magnetron sputtering deposition on p-type Si substrate followed by rapid thermal annealing at relatively low temperature of 600 °C. The frequency dispersion of capacitance and resistance was measured in accumulation regime of Al/HfO2 gate oxide/Ge NCs in HfO2 floating gate/HfO2 tunnel oxide/SiOx/p-Si/Al memory capacitors. For simulation of the frequency dispersion a complex circuit model was used considering an equivalent parallel RC circuit for each layer of the trilayer structure. A series resistance due to metallic contacts and Si substrate was necessary to be included in the model. A very good fit to the experimental data was obtained and the parameters of each layer in the memory capacitor, i.e. capacitances and resistances were determined and in turn the intrinsic material parameters, i.e. dielectric constants and resistivities of layers were evaluated. The results are very important for the study and optimization of the hysteresis behaviour of floating gate memories based on NCs embedded in oxide.

Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants

DOE PAGES

Shirkhorshidian, A.; Bishop, N. C.; Dominguez, J.; ...

2015-04-30

We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The implanted device has resonances superposed on the PC transport indicative of transport through the Sb donors. We fit the differential conductance to a rectangular tunnel barrier model with a linear barrier height dependence on source–drain voltage and non-linear dependence on gate bias. Effects such as Fowler–Nordheim (FN) tunneling and image charge barrier lowering (ICBL) are considered. Barrier heights and widths are estimated for the entiremore » range of relevant biases. The barrier heights at the locations of some of the resonances for the implanted tunnel barrier are between 15–20 meV, which are consistent with transport through shallow partially hybridized Sb donors. The dependence of width and barrier height on gate voltage is found to be linear over a wide range of gate bias in the split gate geometry but deviates considerably when the barrier becomes large and is not described completely by standard 1D models such as FN or ICBL effects.« less

Controlling Working Memory Operations by Selective Gating: The Roles of Oscillations and Synchrony.

PubMed

Dipoppa, Mario; Szwed, Marcin; Gutkin, Boris S

2016-01-01

Working memory (WM) is a primary cognitive function that corresponds to the ability to update, stably maintain, and manipulate short-term memory (ST M) rapidly to perform ongoing cognitive tasks. A prevalent neural substrate of WM coding is persistent neural activity , the property of neurons to remain active after having been activated by a transient sensory stimulus. This persistent activity allows for online maintenance of memory as well as its active manipulation necessary for task performance. WM is tightly capacity limited. Therefore, selective gating of sensory and internally generated information is crucial for WM function. While the exact neural substrate of selective gating remains unclear, increasing evidence suggests that it might be controlled by modulating ongoing oscillatory brain activity. Here, we review experiments and models that linked selective gating, persistent activity, and brain oscillations, putting them in the more general mechanistic context of WM. We do so by defining several operations necessary for successful WM function and then discussing how such operations may be carried out by mechanisms suggested by computational models. We specifically show how oscillatory mechanisms may provide a rapid and flexible active gating mechanism for WM operations.

Robustness against parametric noise of nonideal holonomic gates

NASA Astrophysics Data System (ADS)

Lupo, Cosmo; Aniello, Paolo; Napolitano, Mario; Florio, Giuseppe

2007-07-01

Holonomic gates for quantum computation are commonly considered to be robust against certain kinds of parametric noise, the cause of this robustness being the geometric character of the transformation achieved in the adiabatic limit. On the other hand, the effects of decoherence are expected to become more and more relevant when the adiabatic limit is approached. Starting from the system described by Florio [Phys. Rev. A 73, 022327 (2006)], here we discuss the behavior of nonideal holonomic gates at finite operational time, i.e., long before the adiabatic limit is reached. We have considered several models of parametric noise and studied the robustness of finite-time gates. The results obtained suggest that the finite-time gates present some effects of cancellation of the perturbations introduced by the noise which mimic the geometrical cancellation effect of standard holonomic gates. Nevertheless, a careful analysis of the results leads to the conclusion that these effects are related to a dynamical instead of a geometrical feature.

Improved performance of nanoscale junctionless tunnel field-effect transistor based on gate engineering approach

NASA Astrophysics Data System (ADS)

Molaei Imen Abadi, Rouzbeh; Sedigh Ziabari, Seyed Ali

2016-11-01

In this paper, a first qualitative study on the performance characteristics of dual-work function gate junctionless TFET (DWG-JLTFET) on the basis of energy band profile modulation is investigated. A dual-work function gate technique is used in a JLTFET in order to create a downward band bending on the source side similar to PNPN structure. Compared with the single-work function gate junctionless TFET (SWG-JLTFET), the numerical simulation results demonstrated that the DWG-JLTFET simultaneously optimizes the ON-state current, the OFF-state leakage current, and the threshold voltage and also improves average subthreshold slope. It is illustrated that if appropriate work functions are selected for the gate materials on the source side and the drain side, the JLTFET exhibits a considerably improved performance. Furthermore, the optimization design of the tunnel gate length ( L Tun) for the proposed DWG-JLTFET is studied. All the simulations are done in Silvaco TCAD for a channel length of 20 nm using the nonlocal band-to-band tunneling (BTBT) model.

Thermally activated hysteresis in high quality graphene/h-BN devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cadore, A. R., E-mail: alissoncadore@gmail.com, E-mail: lccampos@fisica.ufmg.br; Mania, E.; Lacerda, R. G.

2016-06-06

We report on gate hysteresis of resistance in high quality graphene/hexagonal boron nitride (h-BN) devices. We observe a thermally activated hysteretic behavior in resistance as a function of the applied gate voltage at temperatures above 375 K. In order to investigate the origin of the hysteretic phenomenon, we compare graphene/h-BN heterostructure devices with SiO{sub 2}/Si back gate electrodes to devices with graphite back gate electrodes. The gate hysteretic behavior of the resistance is present only in devices with an h-BN/SiO{sub 2} interface and is dependent on the orientation of the applied gate electric field and sweep rate. We describe a phenomenologicalmore » model which captures all of our findings based on charges trapped at the h-BN/SiO{sub 2} interface. Such hysteretic behavior in graphene resistance must be considered in high temperature applications for graphene devices and may open new routes for applications in digital electronics and memory devices.« less

Engineering modular and orthogonal genetic logic gates for robust digital-like synthetic biology.

PubMed

Wang, Baojun; Kitney, Richard I; Joly, Nicolas; Buck, Martin

2011-10-18

Modular and orthogonal genetic logic gates are essential for building robust biologically based digital devices to customize cell signalling in synthetic biology. Here we constructed an orthogonal AND gate in Escherichia coli using a novel hetero-regulation module from Pseudomonas syringae. The device comprises two co-activating genes hrpR and hrpS controlled by separate promoter inputs, and a σ(54)-dependent hrpL promoter driving the output. The hrpL promoter is activated only when both genes are expressed, generating digital-like AND integration behaviour. The AND gate is demonstrated to be modular by applying new regulated promoters to the inputs, and connecting the output to a NOT gate module to produce a combinatorial NAND gate. The circuits were assembled using a parts-based engineering approach of quantitative characterization, modelling, followed by construction and testing. The results show that new genetic logic devices can be engineered predictably from novel native orthogonal biological control elements using quantitatively in-context characterized parts. © 2011 Macmillan Publishers Limited. All rights reserved.

Characterization and metrology implications of the 1997 NTRS

NASA Astrophysics Data System (ADS)

Class, W.; Wortman, J. J.

1998-11-01

In the Front-end (transistor forming) area of silicon CMOS device processing, several NTRS difficult challenges have been identified including; scaled and alternate gate dielectric materials, new DRAM dielectric materials, alternate gate materials, elevated contact structures, engineered channels, and large-area cost-effective silicon substrates. This paper deals with some of the characterization and metrology challenges facing the industry if it is to meet the projected needs identified in the NTRS. In the areas of gate and DRAM dielectric, scaling requires that existing material layers be thinned to maximize capacitance. For the current gate dielectric, SiO2 and its nitrided derivatives, direct tunneling will limit scaling to approximately 1.5nm for logic applications before power losses become unacceptable. Low power logic and memory applications may limit scaling to the 2.0-2.2nm range. Beyond these limits, dielectric materials having higher dielectric constant, will permit continued capacitance increases while allowing for the use of thicker dielectric layers, where tunneling may be minimized. In the near term silicon nitride is a promising SiO2 substitute material while in the longer term "high-k" materials such as tantalum pentoxide and barium strontium titanate (BST) will be required. For these latter materials, it is likely that a multilayer dielectric stack will be needed, consisting of an ultra-thin (1-2 atom layer) interfacial SiO2 layer and a high-k overlayer. Silicon wafer surface preparation control, as well as the control of composition, crystal structure, and thickness for such stacks pose significant characterization and metrology challenges. In addition to the need for new gate dielectric materials, new gate materials will be required to overcome the limitations of the current doped polysilicon gate materials. Such a change has broad ramifications on device electrical performance and manufacturing process robustness which again implies a broad range of new characterization and metrology requirements. Finally, the doped structure of the MOS transistor must scale to very small lateral and depth dimensions, and thermal budgets must be reduced to permit the retention of very abrupt highly doped drain and channel engineered structures. Eventually, the NTRS forecasts the need for an elevated contact structure. Here, there are significant challenges associated with three-dimensional dopant profiling, measurement of dopant activity in ultra-shallow device regions, as well as point defect metrology and characterization.

Effect of stochastic gating on channel-facilitated transport of non-interacting and strongly repelling solutes.

PubMed

Berezhkovskii, Alexander M; Bezrukov, Sergey M

2017-08-28

Ligand- or voltage-driven stochastic gating-the structural rearrangements by which the channel switches between its open and closed states-is a fundamental property of biological membrane channels. Gating underlies the channel's ability to respond to different stimuli and, therefore, to be functionally regulated by the changing environment. The accepted understanding of the gating effect on the solute flux through the channel is that the mean flux is the product of the flux through the open channel and the probability of finding the channel in the open state. Here, using a diffusion model of channel-facilitated transport, we show that this is true only when the gating is much slower than the dynamics of solute translocation through the channel. If this condition breaks, the mean flux could differ from this simple estimate by orders of magnitude.

Structural model of the open–closed–inactivated cycle of prokaryotic voltage-gated sodium channels

PubMed Central

Bagnéris, Claire; Naylor, Claire E.; McCusker, Emily C.

2015-01-01

In excitable cells, the initiation of the action potential results from the opening of voltage-gated sodium channels. These channels undergo a series of conformational changes between open, closed, and inactivated states. Many models have been proposed for the structural transitions that result in these different functional states. Here, we compare the crystal structures of prokaryotic sodium channels captured in the different conformational forms and use them as the basis for examining molecular models for the activation, slow inactivation, and recovery processes. We compare structural similarities and differences in the pore domains, specifically in the transmembrane helices, the constrictions within the pore cavity, the activation gate at the cytoplasmic end of the last transmembrane helix, the C-terminal domain, and the selectivity filter. We discuss the observed differences in the context of previous models for opening, closing, and inactivation, and present a new structure-based model for the functional transitions. Our proposed prokaryotic channel activation mechanism is then compared with the activation transition in eukaryotic sodium channels. PMID:25512599

Modeling Proton Irradiation in AlGaN/GaN HEMTs: Understanding the Increase of Critical Voltage

NASA Astrophysics Data System (ADS)

Patrick, Erin; Law, Mark E.; Liu, Lu; Cuervo, Camilo Velez; Xi, Yuyin; Ren, Fan; Pearton, Stephen J.

2013-12-01

A combination of TRIM and FLOODS models the effect of radiation damage on AlGaN/GaN HEMTs. While excellent fits are obtained for threshold voltage shift, the models do not fully explain the increased reliability observed experimentally. In short, the addition of negatively-charged traps in the GaN buffer layer does not significantly change the electric field at the gate edges at radiation fluence levels seen in this study. We propose that negative trapped charge at the nitride/AlGaN interface actually produces the virtual-gate effect that results in decreasing the magnitude of the electric field at the gate edges and thus the increase in critical voltage. Simulation results including nitride interface charge show significant changes in electric field profiles while the I-V device characteristics do not change.

Changes in the planning target volume and liver volume dose based on the selected respiratory phase in respiratory-gated radiation therapy for a hepatocellular carcinoma

NASA Astrophysics Data System (ADS)

Lee, Jae-Seung; Im, In-Chul; Kang, Su-Man; Goo, Eun-Hoe; Baek, Seong-Min

2013-11-01

The aim of this study was to quantitatively analyze the changes in the planning target volume (PTV) and liver volume dose based on the respiratory phase to identify the optimal respiratory phase for respiratory-gated radiation therapy for a hepatocellular carcinoma (HCC). Based on the standardized procedure for respiratory-gated radiation therapy, we performed a 4-dimensional computed tomography simulation for 0 ˜ 90%, 30 ˜ 70%, and 40 ˜ 60% respiratory phases to assess the respiratory stability (S R ) and the defined PTV i for each respiratory phase i. A treatment plan was established, and the changes in the PTV i and dose volume of the liver were quantitatively analyzed. Most patients (91.5%) passed the respiratory stability test (S R = 0.111 ± 0.015). With standardized respiration training exercises, we were able to minimize the overall systematic error caused by irregular respiration. Furthermore, a quantitative analysis to identify the optimal respiratory phase revealed that when a short respiratory phase (40 ˜ 60%) was used, the changes in the PTV were concentrated inside the center line; thus, we were able to obtain both a PTV margin accounting for respiration and a uniform radiation dose within the PTV.

SU-F-T-563: Delivered Dose Reconstruction of Moving Targets for Gated Volumetric Modulated Arc Therapy (VMAT)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chung, H; Cho, S; Jeong, C

2016-06-15

Purpose: Actual delivered dose of moving tumors treated with gated volumetric arc therapy (VMAT) may significantly differ from the planned dose assuming static target. In this study, we developed a method which reconstructs actual delivered dose distribution of moving target by taking into account both tumor motion and dynamic beam delivery of gated VMAT, and applied to abdominal tumors. Methods: Fifteen dual-arc VMAT plans (Eclipse, Varian Medical Systems) for 5 lung, 5 pancreatic, and 5 liver cancer patients treated with gated VMAT stereotactic body radiotherapy (SBRT) were studied. For reconstruction of the delivered dose distribution, we divided each original arcmore » beam into control-point-wise sub-beams, and applied beam isocenter shifting to each sub-beam to reflect the tumor motion. The tumor positions as a function of beam delivery were estimated by synchronizing the beam delivery with the respiratory signal which acquired during treatment. For this purpose, an in-house program (MATLAB, Mathworks) was developed to convert the original DICOM plan data into motion-involved treatment plan. The motion-involved DICOM plan was imported into Eclipse for dose calculation. The reconstructed delivered dose was compared to the plan dose using the dose coverage of gross tumor volume (GTV) and dose distribution of organs at risk (OAR). Results: The mean GTV dose coverage difference between the reconstructed delivered dose and the plan dose was 0.2 % in lung and pancreas cases, and no difference in liver cases. Mean D1000cc of ipsilateral lungs was reduced (0.8 ± 1.4cGy). Conclusion: We successfully developed a method of delivered dose reconstruction taking into account both respiratory tumor motion and dynamic beam delivery, and applied it to abdominal tumors treated with gated VAMT. No significant deterioration of delivered dose distribution indicates that interplay effect would be minimal even in the case of gated SBRT. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2015038710)« less

Orthogonality and Burdens of Heterologous AND Gate Gene Circuits in E. coli

PubMed Central

2017-01-01

Synthetic biology approaches commonly introduce heterologous gene networks into a host to predictably program cells, with the expectation of the synthetic network being orthogonal to the host background. However, introduced circuits may interfere with the host’s physiology, either indirectly by posing a metabolic burden and/or through unintended direct interactions between parts of the circuit with those of the host, affecting functionality. Here we used RNA-Seq transcriptome analysis to quantify the interactions between a representative heterologous AND gate circuit and the host Escherichia coli under various conditions including circuit designs and plasmid copy numbers. We show that the circuit plasmid copy number outweighs circuit composition for their effect on host gene expression with medium-copy number plasmid showing more prominent interference than its low-copy number counterpart. In contrast, the circuits have a stronger influence on the host growth with a metabolic load increasing with the copy number of the circuits. Notably, we show that variation of copy number, an increase from low to medium copy, caused different types of change observed in the behavior of components in the AND gate circuit leading to the unbalance of the two gate-inputs and thus counterintuitive output attenuation. The study demonstrates the circuit plasmid copy number is a key factor that can dramatically affect the orthogonality, burden and functionality of the heterologous circuits in the host chassis. The results provide important guidance for future efforts to design orthogonal and robust gene circuits with minimal unwanted interaction and burden to their host. PMID:29240998

Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer

NASA Astrophysics Data System (ADS)

McGuire, Felicia A.; Cheng, Zhihui; Price, Katherine; Franklin, Aaron D.

2016-08-01

There is a rising interest in employing the negative capacitance (NC) effect to achieve sub-60 mV/decade (below the thermal limit) switching in field-effect transistors (FETs). The NC effect, which is an effectual amplification of the applied gate potential, is realized by incorporating a ferroelectric material in series with a dielectric in the gate stack of a FET. One of the leading challenges to such NC-FETs is the variable substrate capacitance exhibited in 3D semiconductor channels (bulk, Fin, or nanowire) that minimizes the extent of sub-60 mV/decade switching. In this work, we demonstrate 2D NC-FETs that combine the NC effect with 2D MoS2 channels to extend the steep switching behavior. Using the ferroelectric polymer, poly(vinylidene difluoride-trifluoroethylene) (P(VDF-TrFE)), these 2D NC-FETs are fabricated by modification of top-gated 2D FETs through the integrated addition of P(VDF-TrFE) into the gate stack. The impact of including an interfacial metal between the ferroelectric and dielectric is studied and shown to be critical. These 2D NC-FETs exhibit a decrease in subthreshold swing from 113 mV/decade down to 11.7 mV/decade at room temperature with sub-60 mV/decade switching occurring over more than 4 decades of current. The P(VDF-TrFE) proves to be an unstable option for a device technology, yet the superb switching behavior observed herein opens the way for further exploration of nanomaterials for extremely low-voltage NC-FETs.

Automatic segmentation and co-registration of gated CT angiography datasets: measuring abdominal aortic pulsatility

NASA Astrophysics Data System (ADS)

Wentz, Robert; Manduca, Armando; Fletcher, J. G.; Siddiki, Hassan; Shields, Raymond C.; Vrtiska, Terri; Spencer, Garrett; Primak, Andrew N.; Zhang, Jie; Nielson, Theresa; McCollough, Cynthia; Yu, Lifeng

2007-03-01

Purpose: To develop robust, novel segmentation and co-registration software to analyze temporally overlapping CT angiography datasets, with an aim to permit automated measurement of regional aortic pulsatility in patients with abdominal aortic aneurysms. Methods: We perform retrospective gated CT angiography in patients with abdominal aortic aneurysms. Multiple, temporally overlapping, time-resolved CT angiography datasets are reconstructed over the cardiac cycle, with aortic segmentation performed using a priori anatomic assumptions for the aorta and heart. Visual quality assessment is performed following automatic segmentation with manual editing. Following subsequent centerline generation, centerlines are cross-registered across phases, with internal validation of co-registration performed by examining registration at the regions of greatest diameter change (i.e. when the second derivative is maximal). Results: We have performed gated CT angiography in 60 patients. Automatic seed placement is successful in 79% of datasets, requiring either no editing (70%) or minimal editing (less than 1 minute; 12%). Causes of error include segmentation into adjacent, high-attenuating, nonvascular tissues; small segmentation errors associated with calcified plaque; and segmentation of non-renal, small paralumbar arteries. Internal validation of cross-registration demonstrates appropriate registration in our patient population. In general, we observed that aortic pulsatility can vary along the course of the abdominal aorta. Pulsation can also vary within an aneurysm as well as between aneurysms, but the clinical significance of these findings remain unknown. Conclusions: Visualization of large vessel pulsatility is possible using ECG-gated CT angiography, partial scan reconstruction, automatic segmentation, centerline generation, and coregistration of temporally resolved datasets.

A Finite Element Framework for Studying the Mechanical Response of Macromolecules: Application to the Gating of the Mechanosensitive Channel MscL

PubMed Central

Tang, Yuye; Cao, Guoxin; Chen, Xi; Yoo, Jejoong; Yethiraj, Arun; Cui, Qiang

2006-01-01

The gating pathways of mechanosensitive channels of large conductance (MscL) in two bacteria (Mycobacterium tuberculosis and Escherichia coli) are studied using the finite element method. The phenomenological model treats transmembrane helices as elastic rods and the lipid membrane as an elastic sheet of finite thickness; the model is inspired by the crystal structure of MscL. The interactions between various continuum components are derived from molecular-mechanics energy calculations using the CHARMM all-atom force field. Both bacterial MscLs open fully upon in-plane tension in the membrane and the variation of pore diameter with membrane tension is found to be essentially linear. The estimated gating tension is close to the experimental value. The structural variations along the gating pathway are consistent with previous analyses based on structural models with experimental constraints and biased atomistic molecular-dynamics simulations. Upon membrane bending, neither MscL opens substantially, although there is notable and nonmonotonic variation in the pore radius. This emphasizes that the gating behavior of MscL depends critically on the form of the mechanical perturbation and reinforces the idea that the crucial gating parameter is lateral tension in the membrane rather than the curvature of the membrane. Compared to popular all-atom-based techniques such as targeted or steered molecular-dynamics simulations, the finite element method-based continuum-mechanics framework offers a unique alternative to bridge detailed intermolecular interactions and biological processes occurring at large spatial scales and long timescales. It is envisioned that such a hierarchical multiscale framework will find great value in the study of a variety of biological processes involving complex mechanical deformations such as muscle contraction and mechanotransduction. PMID:16731564

Computational Model of the Insect Pheromone Transduction Cascade

PubMed Central

Gu, Yuqiao; Lucas, Philippe; Rospars, Jean-Pierre

2009-01-01

A biophysical model of receptor potential generation in the male moth olfactory receptor neuron is presented. It takes into account all pre-effector processes—the translocation of pheromone molecules from air to sensillum lymph, their deactivation and interaction with the receptors, and the G-protein and effector enzyme activation—and focuses on the main post-effector processes. These processes involve the production and degradation of second messengers (IP3 and DAG), the opening and closing of a series of ionic channels (IP3-gated Ca2+ channel, DAG-gated cationic channel, Ca2+-gated Cl− channel, and Ca2+- and voltage-gated K+ channel), and Ca2+ extrusion mechanisms. The whole network is regulated by modulators (protein kinase C and Ca2+-calmodulin) that exert feedback inhibition on the effector and channels. The evolution in time of these linked chemical species and currents and the resulting membrane potentials in response to single pulse stimulation of various intensities were simulated. The unknown parameter values were fitted by comparison to the amplitude and temporal characteristics (rising and falling times) of the experimentally measured receptor potential at various pheromone doses. The model obtained captures the main features of the dose–response curves: the wide dynamic range of six decades with the same amplitudes as the experimental data, the short rising time, and the long falling time. It also reproduces the second messenger kinetics. It suggests that the two main types of depolarizing ionic channels play different roles at low and high pheromone concentrations; the DAG-gated cationic channel plays the major role for depolarization at low concentrations, and the Ca2+-gated Cl− channel plays the major role for depolarization at middle and high concentrations. Several testable predictions are proposed, and future developments are discussed. PMID:19300479

The effect of split gate dimensions on the electrostatic potential and 0.7 anomaly within one-dimensional quantum wires on a modulation doped GaAs/AlGaAs heterostructure

NASA Astrophysics Data System (ADS)

Smith, L. W.; Al-Taie, H.; Lesage, A. A. J.; Thomas, K. J.; Sfigakis, F.; See, P.; Griffiths, J. P.; Farrer, I.; Jones, G. A. C.; Ritchie, D. A.; Kelly, M. J.; Smith, C. G.

We use a multiplexing scheme to measure the conductance properties of 95 split gates of 7 different gate dimensions fabricated on a GaAs/AlGaAs chip, in a single cool down. The number of devices for which conductance is accurately quantized reduces as the gate length increases. However, even the devices for which conductance is accurately quantized in units of 2e2 / h show no correlation between the length of electrostatic potential barrier in the channel and the gate length, using a saddle point model to estimate the barrier length. Further, the strength of coupling between the gates and the 1D channel does not increase with gate length beyond 0.7 μm. The background electrostatic profile appears as significant as the gate dimension in determining device behavior. We find a clear correlation between the curvature of the electrostatic barrier along the channel and the strength of the ``0.7 anomaly'' which identifies the electrostatic length of the channel as the principal factor governing the conductance of the 0.7 anomaly. Present address: Wisconsin Institute for Quantum Information, University of Wisconsin-Madison, Madison, WI.

An electrically reconfigurable logic gate intrinsically enabled by spin-orbit materials.

PubMed

Kazemi, Mohammad

2017-11-10

The spin degree of freedom in magnetic devices has been discussed widely for computing, since it could significantly reduce energy dissipation, might enable beyond Von Neumann computing, and could have applications in quantum computing. For spin-based computing to become widespread, however, energy efficient logic gates comprising as few devices as possible are required. Considerable recent progress has been reported in this area. However, proposals for spin-based logic either require ancillary charge-based devices and circuits in each individual gate or adopt principals underlying charge-based computing by employing ancillary spin-based devices, which largely negates possible advantages. Here, we show that spin-orbit materials possess an intrinsic basis for the execution of logic operations. We present a spin-orbit logic gate that performs a universal logic operation utilizing the minimum possible number of devices, that is, the essential devices required for representing the logic operands. Also, whereas the previous proposals for spin-based logic require extra devices in each individual gate to provide reconfigurability, the proposed gate is 'electrically' reconfigurable at run-time simply by setting the amplitude of the clock pulse applied to the gate. We demonstrate, analytically and numerically with experimentally benchmarked models, that the gate performs logic operations and simultaneously stores the result, realizing the 'stateful' spin-based logic scalable to ultralow energy dissipation.

Design of a portable fluoroquinolone analyzer based on terbium-sensitized luminescence

NASA Astrophysics Data System (ADS)

Chen, Guoying

2007-09-01

A portable fluoroquinolone (FQ) analyzer is designed and prototyped based on terbium-sensitized luminescence (TSL). The excitation source is a 327-nm light emitting diode (LED) operated in pulsed mode; and the luminescence signal is detected by a photomultiplier tube (PMT). In comparison to a conventional xenon flashlamp, an LED is small, light, robust, and energy efficient. More importantly, its narrow emission bandwidth and low residual radiation reduce background signal. In pulse mode, an LED operates at a current 1-2 orders of magnitude lower than that of a xenon flashlamp, thus minimizing electromagnetic interference (EMI) to the detector circuitry. The PMT is gated to minimize its response to the light source. These measures lead to reduced background noise in time domain. To overcome pulse-to-pulse variation signal normalization is implemented based on individual pulse energy. Instrument operation and data processing are controlled by a computer running a custom LabVIEW program. Enrofloxacin (ENRO) is used as a model analyte to evaluate instrument performance. The integrated TSL intensity reveals a linear dependence up to 2 ppm. A 1.1-ppb limit of detection (LOD) is achieved with relative standard deviation (RSD) averaged at 5.1%. The background noise corresponds to ~5 ppb. At 19 lbs, this portable analyzer is field deployable for agriculture, environmental and clinical analyses.

Gate line edge roughness amplitude and frequency variation effects on intra die MOS device characteristics

NASA Astrophysics Data System (ADS)

Hamadeh, Emad; Gunther, Norman G.; Niemann, Darrell; Rahman, Mahmud

2006-06-01

Random fluctuations in fabrication process outcomes such as gate line edge roughness (LER) give rise to corresponding fluctuations in scaled down MOS device characteristics. A thermodynamic-variational model is presented to study the effects of LER on threshold voltage and capacitance of sub-50 nm MOS devices. Conceptually, we treat the geometric definition of the MOS devices on a die as consisting of a collection of gates. In turn, each of these gates has an area, A, and a perimeter, P, defined by nominally straight lines subject to random process outcomes producing roughness. We treat roughness as being deviations from straightness consisting of both transverse amplitude and longitudinal wavelength each having lognormal distribution. We obtain closed-form expressions for variance of threshold voltage ( Vth), and device capacitance ( C) at Onset of Strong Inversion (OSI) for a small device. Using our variational model, we characterized the device electrical properties such as σ and σC in terms of the statistical parameters of the roughness amplitude and spatial frequency, i.e., inverse roughness wavelength. We then verified our model with numerical analysis of Vth roll-off for small devices and σ due to dopant fluctuation. Our model was also benchmarked against TCAD of σ as a function of LER. We then extended our analysis to predict variations in σ and σC versus average LER spatial frequency and amplitude, and oxide-thickness. Given the intuitive expectation that LER of very short wavelengths must also have small amplitude, we have investigated the case in which the amplitude mean is inversely related to the frequency mean. We compare with the situation in which amplitude and frequency mean are unrelated. Given also that the gate perimeter may consist of different LER signature for each side, we have extended our analysis to the case when the LER statistical difference between gate sides is moderate, as well as when it is significantly large.

Cryo-EM Structure of the Mechanotransduction Channel NOMPC

PubMed Central

Jin, Peng; Bulkley, David; Guo, Yanmeng; Zhang, Wei; Guo, Zhenhao; Huynh, Walter; Wu, Shenping; Meltzer, Shan; Cheng, Tong; Jan, Lily Yeh; Jan, Yuh-Nung; Cheng, Yifan

2017-01-01

Mechanosensory transduction for senses such as proprioception, touch, balance, acceleration, hearing and pain relies on mechanotransduction channels, which convert mechanical stimuli into electrical signals in specialized sensory cells1. How force gates mechanotransduction channels is a central question in the field, for which there are two major models. One is the membrane-tension model: force applied to the membrane generates a change in membrane tension that is sufficient to gate the channel, as in the case of bacterial MscL channel and certain eukaryotic potassium channels2-5. The other is the tether model: force is transmitted via a tether to gate the channel. Recent study suggests that NOMPC, a mechanotransduction channel that mediates hearing and touch sensation in Drosophila, is gated by tethering of its ankyrin repeat (AR) domain to microtubules of the cytoskeleton6. Thus, a goal of studying NOMPC is to reveal the underlying mechanism of force induced gating, which could serve as a paradigm of the tether model. NOMPC, a Transient Receptor Potential (TRP) channel and the founding member of the TRPN sub-family7, fulfills all the criteria for a bona fide mechanotransduction channel1,8, and is important for a variety of mechanosensation-related behaviors such as locomotion, touch and sound sensation across different species including C. elegans9, Drosophila8,10-11 and zebrafish12. NOMPC has 29 ARs, the largest number among TRP channels. They are implicated as tether to convey force from cytoskeleton to the channel, thus to mediate mechanosensation6,13-15. A key question is how the long AR domain is organized as a tether that can trigger channel gating. Here we present a de novo atomic structure of NOMPC determined by single particle electron cryo-microscopy (cryo-EM), and discuss how its architecture could provide a means to convey mechanical force to generating an electrical signal within a cell. PMID:28658211

CADAT network translator

NASA Technical Reports Server (NTRS)

Pitts, E. R.

1981-01-01

Program converts cell-net data into logic-gate models for use in test and simulation programs. Input consists of either Place, Route, and Fold (PRF) or Place-and-Route-in-Two-Dimensions (PR2D) layout data deck. Output consists of either Test Pattern Generator (TPG) or Logic-Simulation (LOGSIM) logic circuitry data deck. Designer needs to build only logic-gate-model circuit description since program acts as translator. Language is FORTRAN IV.

Sub-Circuit Selection and Replacement Algorithms Modeled as Term Rewriting Systems

DTIC Science & Technology

2008-12-16

424, 389, 084, 160 2 In. - 4 Out. 8 , 534, 800, 742, 400 1, 692, 393, 846 , 681, 600 2 In. - 5 Out. 12, 142, 363, 968, 000 2, 661, 320, 479, 104, 000 3...57 A.2 The number of sub-circuits containing 5 and 6 gates . . . . . . 59 A.3 The number of sub-circuits containing 7 and 8 gates . . . . . . 61 A.4...number of sub-circuits containing 7 and 8 gates . . . . . . 68 B.1 Circuit Transformation Rules . . . . . . . . . . . . . . . . . . . 71 x Sub-circuit

Time-Resolved Remote-Raman Spectroscopic study of Minerals at High Temperature and under Supercritical CO2 Relevant to Venus Exploration

NASA Astrophysics Data System (ADS)

Sharma, S. K.; Misra, A. K.; Clegg, S. M.; Barefield, J. E.; Wiens, R. C.; Acosta, T.

2009-12-01

We have used a remote time-resolved (TR) telescopic Raman system equipped with 532 nm pulsed laser excitation and a gated intensified CCD (ICCD) detector for measuring Raman spectra of a number of minerals under two sets of conditions. The first set of experiments involved probing samples as a function of temperature ranging from 300 to 973 K at 1 atm. These experiments involve a 5x beam expander to focus the 532 nm (30 mJ/pulse 20 Hz) laser beams onto the sample at 9 m from the remote Raman system. The second set of experiments involved placing the samples in a high pressure vessel with a sapphire window containing supercritical CO2 at pressures up to 93 atm and 423 K. At high temperatures and ambient pressure, the remote Raman measurements were made with samples at 9 meter distance inside a high temperature furnace by gating the ICCD detector with 2 micro-s gate to minimize interference from blackbody emission from mineral surfaces at high temperature as well as interference from ambient light. A comparison of Raman spectra of gypsum (CaSO4.2H2O), dolomite (CaMg(CO3)2), and olivine (Mg2Fe2-xSiO4), as a function of temperature shows that the Raman lines remains sharp and well defined even in the high temperature spectra. In the pressure vessel, Cr3+ fluorescence from sapphire window interfere with the Raman spectra of hydrous minerals in the high-frequency region (2500-4500 cm-1). With time-resolved Raman measurements the interference of the fluorescence in the Raman spectra on minerals was minimized by gating ICCD to <100 ns. The Fermi resonance doublet of CO2 molecules consisting of Raman lines at 1285 (2ν2) and 1388 (ν1) cm-1 does not interfere with the major Raman fingerprints of silicates, carbonate, sulfates minerals. With suitable time delay of the ICCD detector, the Raman bands from supercritical CO2 atmosphere can be minimized providing pure Raman spectra of the mineral targets. We will present remote Raman data on silicates (olivine, pyroxene, quartz, feldspars and talc), dolomite, gypsum, hydrous iron sulfate and barite under supercritical CO2 environment. With TR remote Raman system using 532 nm (15 mJ/pulse, 20Hz) laser excitation, a large varieties of minerals could be easily identified from their respective Raman fingerprints typically in 1s. Minerals with low Raman cross section (e.g., feldspars, pyroxene, olivine, talc, etc) can be detected and quantified from their respective Raman spectra in 10 to 30 s. These results show that time-resolve remote Raman system is capable of making spectral measurements at several hundred to thousand target points on Venus surface within limited (a few hours) expected lifetime of a lander because of extreme temperature and pressure conditions.

NewGate Model.

ERIC Educational Resources Information Center

National Council on Crime and Delinquency, Hackensack, NJ. NewGate Resource Center.

A guide is provided for establishing a college-level education program for inmates of correctional institutions based on the NewGate concept. Necessary first steps are evaluation of current facilities, selection of the sponsoring agency, and selection of the student body. Guidelines for student selection deal with application procedure, record…

Thermodynamics of quasideterministic digital computers

NASA Astrophysics Data System (ADS)

Chu, Dominique

2018-02-01

A central result of stochastic thermodynamics is that irreversible state transitions of Markovian systems entail a cost in terms of an infinite entropy production. A corollary of this is that strictly deterministic computation is not possible. Using a thermodynamically consistent model, we show that quasideterministic computation can be achieved at finite, and indeed modest cost with accuracies that are indistinguishable from deterministic behavior for all practical purposes. Concretely, we consider the entropy production of stochastic (Markovian) systems that behave like and and a not gates. Combinations of these gates can implement any logical function. We require that these gates return the correct result with a probability that is very close to 1, and additionally, that they do so within finite time. The central component of the model is a machine that can read and write binary tapes. We find that the error probability of the computation of these gates falls with the power of the system size, whereas the cost only increases linearly with the system size.

Performance characteristics of nanocrystalline diamond vacuum field emission transistor array

NASA Astrophysics Data System (ADS)

Hsu, S. H.; Kang, W. P.; Davidson, J. L.; Huang, J. H.; Kerns, D. V.

2012-06-01

Nitrogen-incorporated nanocrystalline diamond (ND) vacuum field emission transistor (VFET) with self-aligned gate is fabricated by mold transfer microfabrication technique in conjunction with chemical vapor deposition (CVD) of nanocrystalline diamond on emitter cavity patterned on silicon-on-insulator (SOI) substrate. The fabricated ND-VFET demonstrates gate-controlled emission current with good signal amplification characteristics. The dc characteristics of the ND-VFET show well-defined cutoff, linear, and saturation regions with low gate turn-on voltage, high anode current, negligible gate intercepted current, and large dc voltage gain. The ac performance of the ND-VFET is measured, and the experimental data are analyzed using a modified small signal circuit model. The experimental results obtained for the ac voltage gain are found to agree with the theoretical model. A higher ac voltage gain is attainable by using a better test setup to eliminate the associated parasitic capacitances. The paper reveals the amplifier characteristics of the ND-VFET for potential applications in vacuum microelectronics.

Performance characteristics of nanocrystalline diamond vacuum field emission transistor array

NASA Astrophysics Data System (ADS)

Hsu, S. H.; Kang, W. P.; Davidson, J. L.; Huang, J. H.; Kerns, D. V.

2012-05-01

Nitrogen-incorporated nanocrystalline diamond (ND) vacuum field emission transistor (VFET) with self-aligned gate is fabricated by mold transfer microfabrication technique in conjunction with chemical vapor deposition (CVD) of nanocrystalline diamond on emitter cavity patterned on silicon-on-insulator (SOI) substrate. The fabricated ND-VFET demonstrates gate-controlled emission current with good signal amplification characteristics. The dc characteristics of the ND-VFET show well-defined cutoff, linear, and saturation regions with low gate turn-on voltage, high anode current, negligible gate intercepted current, and large dc voltage gain. The ac performance of the ND-VFET is measured, and the experimental data are analyzed using a modified small signal circuit model. The experimental results obtained for the ac voltage gain are found to agree with the theoretical model. A higher ac voltage gain is attainable by using a better test setup to eliminate the associated parasitic capacitances. The paper reveals the amplifier characteristics of the ND-VFET for potential applications in vacuum microelectronics.

Effect of atomic layer deposition temperature on current conduction in Al{sub 2}O{sub 3} films formed using H{sub 2}O oxidant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hiraiwa, Atsushi, E-mail: hiraiwa@aoni.waseda.jp, E-mail: qs4a-hriw@asahi-net.or.jp; Matsumura, Daisuke; Kawarada, Hiroshi, E-mail: kawarada@waseda.jp

To develop high-performance, high-reliability gate insulation and surface passivation technologies for wide-bandgap semiconductor devices, the effect of atomic layer deposition (ALD) temperature on current conduction in Al{sub 2}O{sub 3} films is investigated based on the recently proposed space-charge-controlled field emission model. Leakage current measurement shows that Al{sub 2}O{sub 3} metal-insulator-semiconductor capacitors formed on the Si substrates underperform thermally grown SiO{sub 2} capacitors at the same average field. However, using equivalent oxide field as a more practical measure, the Al{sub 2}O{sub 3} capacitors are found to outperform the SiO{sub 2} capacitors in the cases where the capacitors are negatively biased andmore » the gate material is adequately selected to reduce virtual dipoles at the gate/Al{sub 2}O{sub 3} interface. The Al{sub 2}O{sub 3} electron affinity increases with the increasing ALD temperature, but the gate-side virtual dipoles are not affected. Therefore, the leakage current of negatively biased Al{sub 2}O{sub 3} capacitors is approximately independent of the ALD temperature because of the compensation of the opposite effects of increased electron affinity and permittivity in Al{sub 2}O{sub 3}. By contrast, the substrate-side sheet of charge increases with increasing ALD temperature above 210 °C and hence enhances the current of positively biased Al{sub 2}O{sub 3} capacitors more significantly at high temperatures. Additionally, an anomalous oscillatory shift of the current-voltage characteristics with ALD temperature was observed in positively biased capacitors formed by low-temperature (≤210 °C) ALD. This shift is caused by dipoles at the Al{sub 2}O{sub 3}/underlying SiO{sub 2} interface. Although they have a minimal positive-bias leakage current, the low-temperature-grown Al{sub 2}O{sub 3} films cause the so-called blisters problem when heated above 400 °C. Therefore, because of the absence of blistering, a 450 °C ALD process is presently the most promising technology for growing high-reliability Al{sub 2}O{sub 3} films.« less

Effects of flow diversions on water and habitat quality: Examples from California's highly manipulated Sacramento–San Joaquin Delta

USGS Publications Warehouse

Monsen, Nancy E.; Cloern, James E.; Burau, Jon R.

2007-01-01

We use selected monitoring data to illustrate how localized water diversions from seasonal barriers, gate operations, and export pumps alter water quality across the Sacramento-San Joaquin Delta (California). Dynamics of water-quality variability are complex because the Delta is a mixing zone of water from the Sacramento and San Joaquin Rivers, agricultural return water, and the San Francisco Estuary. Each source has distinct water-quality characteristics, and the contribution of each source varies in response to natural hydrologic variability and water diversions. We use simulations with a tidal hydrodynamic model to reveal how three diversion events, as case studies, influence water quality through their alteration of Delta-wide water circulation patterns and flushing time. Reduction of export pumping decreases the proportion of Sacramento- to San Joaquin-derived fresh water in the central Delta, leading to rapid increases in salinity. Delta Cross Channel gate operations control salinity in the western Delta and alter the freshwater source distribution in the central Delta. Removal of the head of Old River barrier, in autumn, increases the flushing time of the Stockton Ship Channel from days to weeks, contributing to a depletion of dissolved oxygen. Each shift in water quality has implications either for habitat quality or municipal drinking water, illustrating the importance of a systems view to anticipate the suite of changes induced by flow manipulations, and to minimize the conflicts inherent in allocations of scarce resources to meet multiple objectives.

Printing Semiconductor-Insulator Polymer Bilayers for High-Performance Coplanar Field-Effect Transistors.

PubMed

Bu, Laju; Hu, Mengxing; Lu, Wanlong; Wang, Ziyu; Lu, Guanghao

2018-01-01

Source-semiconductor-drain coplanar transistors with an organic semiconductor layer located within the same plane of source/drain electrodes are attractive for next-generation electronics, because they could be used to reduce material consumption, minimize parasitic leakage current, avoid cross-talk among different devices, and simplify the fabrication process of circuits. Here, a one-step, drop-casting-like printing method to realize a coplanar transistor using a model semiconductor/insulator [poly(3-hexylthiophene) (P3HT)/polystyrene (PS)] blend is developed. By manipulating the solution dewetting dynamics on the metal electrode and SiO 2 dielectric, the solution within the channel region is selectively confined, and thus make the top surface of source/drain electrodes completely free of polymers. Subsequently, during solvent evaporation, vertical phase separation between P3HT and PS leads to a semiconductor-insulator bilayer structure, contributing to an improved transistor performance. Moreover, this coplanar transistor with semiconductor-insulator bilayer structure is an ideal system for injecting charges into the insulator via gate-stress, and the thus-formed PS electret layer acts as a "nonuniform floating gate" to tune the threshold voltage and effective mobility of the transistors. Effective field-effect mobility higher than 1 cm 2 V -1 s -1 with an on/off ratio > 10 7 is realized, and the performances are comparable to those of commercial amorphous silicon transistors. This coplanar transistor simplifies the fabrication process of corresponding circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Parallel algorithm for computation of second-order sequential best rotations

NASA Astrophysics Data System (ADS)

Redif, Soydan; Kasap, Server

2013-12-01

Algorithms for computing an approximate polynomial matrix eigenvalue decomposition of para-Hermitian systems have emerged as a powerful, generic signal processing tool. A technique that has shown much success in this regard is the sequential best rotation (SBR2) algorithm. Proposed is a scheme for parallelising SBR2 with a view to exploiting the modern architectural features and inherent parallelism of field-programmable gate array (FPGA) technology. Experiments show that the proposed scheme can achieve low execution times while requiring minimal FPGA resources.

Towards a Minimal Architecture for a Printable, Modular, and Robust Sensing Skin

DTIC Science & Technology

2014-04-27

hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for...the total logic complexity and reduce sensor throughput. The final selection can be made to balance these effects given a specific application. Sensor...Company (TSMC)’s 65-nm GPLUSTC CMOS standard cells. Table II shows the number of gates (standard cells) and flip -flops generated for the given number of

Spectral function of few electrons in quantum wires and carbon nanotubes as a signature of Wigner localization

NASA Astrophysics Data System (ADS)

Secchi, Andrea; Rontani, Massimo

2012-03-01

We demonstrate that the profile of the space-resolved spectral function at finite temperature provides a signature of Wigner localization for electrons in quantum wires and semiconducting carbon nanotubes. Our numerical evidence is based on the exact diagonalization of the microscopic Hamiltonian of few particles interacting in gate-defined quantum dots. The minimal temperature required to suppress residual exchange effects in the spectral function image of (nanotubes) quantum wires lies in the (sub)kelvin range.

A heuristic for suffix solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bilgory, A.; Gajski, D.D.

1986-01-01

The suffix problem has appeared in solutions of recurrence systems for parallel and pipelined machines and more recently in the design of gate and silicon compilers. In this paper the authors present two algorithms. The first algorithm generates parallel suffix solutions with minimum cost for a given length, time delay, availability of initial values, and fanout. This algorithm generates a minimal solution for any length n and depth range log/sub 2/ N to N. The second algorithm reduces the size of the solutions generated by the first algorithm.

Fredkin and Toffoli Gates Implemented in Oregonator Model of Belousov-Zhabotinsky Medium

NASA Astrophysics Data System (ADS)

Adamatzky, Andrew

A thin-layer Belousov-Zhabotinsky (BZ) medium is a powerful computing device capable for implementing logical circuits, memory, image processors, robot controllers, and neuromorphic architectures. We design the reversible logical gates — Fredkin gate and Toffoli gate — in a BZ medium network of excitable channels with subexcitable junctions. Local control of the BZ medium excitability is an important feature of the gates’ design. An excitable thin-layer BZ medium responds to a localized perturbation with omnidirectional target or spiral excitation waves. A subexcitable BZ medium responds to an asymmetric perturbation by producing traveling localized excitation wave-fragments similar to dissipative solitons. We employ interactions between excitation wave-fragments to perform the computation. We interpret the wave-fragments as values of Boolean variables. The presence of a wave-fragment at a given site of a circuit represents the logical truth, absence of the wave-fragment — logically false. Fredkin gate consists of ten excitable channels intersecting at 11 junctions, eight of which are subexcitable. Toffoli gate consists of six excitable channels intersecting at six junctions, four of which are subexcitable. The designs of the gates are verified using numerical integration of two-variable Oregonator equations.

A Component-Based FPGA Design Framework for Neuronal Ion Channel Dynamics Simulations

PubMed Central

Mak, Terrence S. T.; Rachmuth, Guy; Lam, Kai-Pui; Poon, Chi-Sang

2008-01-01

Neuron-machine interfaces such as dynamic clamp and brain-implantable neuroprosthetic devices require real-time simulations of neuronal ion channel dynamics. Field Programmable Gate Array (FPGA) has emerged as a high-speed digital platform ideal for such application-specific computations. We propose an efficient and flexible component-based FPGA design framework for neuronal ion channel dynamics simulations, which overcomes certain limitations of the recently proposed memory-based approach. A parallel processing strategy is used to minimize computational delay, and a hardware-efficient factoring approach for calculating exponential and division functions in neuronal ion channel models is used to conserve resource consumption. Performances of the various FPGA design approaches are compared theoretically and experimentally in corresponding implementations of the AMPA and NMDA synaptic ion channel models. Our results suggest that the component-based design framework provides a more memory economic solution as well as more efficient logic utilization for large word lengths, whereas the memory-based approach may be suitable for time-critical applications where a higher throughput rate is desired. PMID:17190033

Echocardiography as an indication of continuous-time cardiac quiescence

NASA Astrophysics Data System (ADS)

Wick, C. A.; Auffermann, W. F.; Shah, A. J.; Inan, O. T.; Bhatti, P. T.; Tridandapani, S.

2016-07-01

Cardiac computed tomography (CT) angiography using prospective gating requires that data be acquired during intervals of minimal cardiac motion to obtain diagnostic images of the coronary vessels free of motion artifacts. This work is intended to assess B-mode echocardiography as a continuous-time indication of these quiescent periods to determine if echocardiography can be used as a cost-efficient, non-ionizing modality to develop new prospective gating techniques for cardiac CT. These new prospective gating approaches will not be based on echocardiography itself but on CT-compatible modalities derived from the mechanics of the heart (e.g. seismocardiography and impedance cardiography), unlike the current standard electrocardiogram. To this end, echocardiography and retrospectively-gated CT data were obtained from ten patients with varied cardiac conditions. CT reconstructions were made throughout the cardiac cycle. Motion of the interventricular septum (IVS) was calculated from both echocardiography and CT reconstructions using correlation-based, deviation techniques. The IVS was chosen because it (1) is visible in echocardiography images, whereas the coronary vessels generally are not, and (2) has been shown to be a suitable indicator of cardiac quiescence. Quiescent phases were calculated as the minima of IVS motion and CT volumes were reconstructed for these phases. The diagnostic quality of the CT reconstructions from phases calculated from echocardiography and CT data was graded on a four-point Likert scale by a board-certified radiologist fellowship-trained in cardiothoracic radiology. Using a Wilcoxon signed-rank test, no significant difference in the diagnostic quality of the coronary vessels was found between CT volumes reconstructed from echocardiography- and CT-selected phases. Additionally, there was a correlation of 0.956 between the echocardiography- and CT-selected phases. This initial work suggests that B-mode echocardiography can be used as a tool to develop CT-compatible gating techniques based on modalities derived from cardiac mechanics rather than relying on the ECG alone.

Modeling and estimation of process-induced stress in the nanowire field-effect-transistors (NW-FETs) on Insulator-on-Silicon substrates with high-k gate-dielectrics

NASA Astrophysics Data System (ADS)

Chatterjee, Sulagna; Chattopadhyay, Sanatan

2016-10-01

An analytical model including the simultaneous impact of lattice and thermo-elastic constant mismatch-induced stress in nanowires on Insulator-on-Silicon substrate is developed. It is used to calibrate the finite-element based software, ANSYS, which is subsequently employed to estimate process-induced stress in the sequential steps of NW-FET fabrication. The model considers crystal structures and orientations for both the nanowires and substrates. In-plane stress components along nanowire-axis are estimated for different radii and fractions of insertion. Nature of longitudinal stress is observed to change when inserted fraction of nanowires is changed. Effect of various high-k gate-dielectrics is also investigated. A longitudinal tensile stress of 2.4 GPa and compressive stress of 1.89 GPa have been obtained for NW-FETs with 1/4th and 3/4th insertions with La2O3 and TiO2 as the gate-dielectrics, respectively. Therefore, it is possible to achieve comparable values of electron and hole mobility in NW-FETs by judiciously choosing gate-dielectrics and fractional insertion of the nanowires.

Gating Mechanisms of Mechanosensitive Channels of Large Conductance, I: A Continuum Mechanics-Based Hierarchical Framework

PubMed Central

Chen, Xi; Cui, Qiang; Tang, Yuye; Yoo, Jejoong; Yethiraj, Arun

2008-01-01

A hierarchical simulation framework that integrates information from molecular dynamics (MD) simulations into a continuum model is established to study the mechanical response of mechanosensitive channel of large-conductance (MscL) using the finite element method (FEM). The proposed MD-decorated FEM (MDeFEM) approach is used to explore the detailed gating mechanisms of the MscL in Escherichia coli embedded in a palmitoyloleoylphosphatidylethanolamine lipid bilayer. In Part I of this study, the framework of MDeFEM is established. The transmembrane and cytoplasmic helices are taken to be elastic rods, the loops are modeled as springs, and the lipid bilayer is approximated by a three-layer sheet. The mechanical properties of the continuum components, as well as their interactions, are derived from molecular simulations based on atomic force fields. In addition, analytical closed-form continuum model and elastic network model are established to complement the MDeFEM approach and to capture the most essential features of gating. In Part II of this study, the detailed gating mechanisms of E. coli-MscL under various types of loading are presented and compared with experiments, structural model, and all-atom simulations, as well as the analytical models established in Part I. It is envisioned that such a hierarchical multiscale framework will find great value in the study of a variety of biological processes involving complex mechanical deformations such as muscle contraction and mechanotransduction. PMID:18390626

A Gaussian framework for modeling effects of frequency-dependent attenuation, frequency-dependent scattering, and gating.

PubMed

Wear, Keith A

2002-11-01

For a wide range of applications in medical ultrasound, power spectra of received signals are approximately Gaussian. It has been established previously that an ultrasound beam with a Gaussian spectrum propagating through a medium with linear attenuation remains Gaussian. In this paper, Gaussian transformations are derived to model the effects of scattering (according to a power law, as is commonly applicable in soft tissues, especially over limited frequency ranges) and gating (with a Hamming window, a commonly used gate function). These approximations are shown to be quite accurate even for relatively broad band systems with fractional bandwidths approaching 100%. The theory is validated by experiments in phantoms consisting of glass particles suspended in agar.

SU-E-T-254: Optimization of GATE and PHITS Monte Carlo Code Parameters for Uniform Scanning Proton Beam Based On Simulation with FLUKA General-Purpose Code

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurosu, K; Department of Medical Physics ' Engineering, Osaka University Graduate School of Medicine, Osaka; Takashina, M

Purpose: Monte Carlo codes are becoming important tools for proton beam dosimetry. However, the relationships between the customizing parameters and percentage depth dose (PDD) of GATE and PHITS codes have not been reported which are studied for PDD and proton range compared to the FLUKA code and the experimental data. Methods: The beam delivery system of the Indiana University Health Proton Therapy Center was modeled for the uniform scanning beam in FLUKA and transferred identically into GATE and PHITS. This computational model was built from the blue print and validated with the commissioning data. Three parameters evaluated are the maximummore » step size, cut off energy and physical and transport model. The dependence of the PDDs on the customizing parameters was compared with the published results of previous studies. Results: The optimal parameters for the simulation of the whole beam delivery system were defined by referring to the calculation results obtained with each parameter. Although the PDDs from FLUKA and the experimental data show a good agreement, those of GATE and PHITS obtained with our optimal parameters show a minor discrepancy. The measured proton range R90 was 269.37 mm, compared to the calculated range of 269.63 mm, 268.96 mm, and 270.85 mm with FLUKA, GATE and PHITS, respectively. Conclusion: We evaluated the dependence of the results for PDDs obtained with GATE and PHITS Monte Carlo generalpurpose codes on the customizing parameters by using the whole computational model of the treatment nozzle. The optimal parameters for the simulation were then defined by referring to the calculation results. The physical model, particle transport mechanics and the different geometrybased descriptions need accurate customization in three simulation codes to agree with experimental data for artifact-free Monte Carlo simulation. This study was supported by Grants-in Aid for Cancer Research (H22-3rd Term Cancer Control-General-043) from the Ministry of Health, Labor and Welfare of Japan, Grants-in-Aid for Scientific Research (No. 23791419), and JSPS Core-to-Core program (No. 23003). The authors have no conflict of interest.« less

Stem thrust prediction model for W-K-M double wedge parallel expanding gate valves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eldiwany, B.; Alvarez, P.D.; Wolfe, K.

1996-12-01

An analytical model for determining the required valve stem thrust during opening and closing strokes of W-K-M parallel expanding gate valves was developed as part of the EPRI Motor-Operated Valve Performance Prediction Methodology (EPRI MOV PPM) Program. The model was validated against measured stem thrust data obtained from in-situ testing of three W-K-M valves. Model predictions show favorable, bounding agreement with the measured data for valves with Stellite 6 hardfacing on the disks and seat rings for water flow in the preferred flow direction (gate downstream). The maximum required thrust to open and to close the valve (excluding wedging andmore » unwedging forces) occurs at a slightly open position and not at the fully closed position. In the nonpreferred flow direction, the model shows that premature wedging can occur during {Delta}P closure strokes even when the coefficients of friction at different sliding surfaces are within the typical range. This paper summarizes the model description and comparison against test data.« less

Free energy dissipation of the spontaneous gating of a single voltage-gated potassium channel.

PubMed

Wang, Jia-Zeng; Wang, Rui-Zhen

2018-02-01

Potassium channels mainly contribute to the resting potential and re-polarizations, with the potassium electrochemical gradient being maintained by the pump Na + /K + -ATPase. In this paper, we construct a stochastic model mimicking the kinetics of a potassium channel, which integrates temporal evolving of the membrane voltage and the spontaneous gating of the channel. Its stationary probability density functions (PDFs) are found to be singular at the boundaries, which result from the fact that the evolving rates of voltage are greater than the gating rates of the channel. We apply PDFs to calculate the power dissipations of the potassium current, the leakage, and the gating currents. On a physical perspective, the essential role of the system is the K + -battery charging the leakage (L-)battery. A part of power will inevitably be dissipated among the process. So, the efficiency of energy transference is calculated.

Combining dynamical decoupling with fault-tolerant quantum computation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ng, Hui Khoon; Preskill, John; Lidar, Daniel A.

2011-07-15

We study how dynamical decoupling (DD) pulse sequences can improve the reliability of quantum computers. We prove upper bounds on the accuracy of DD-protected quantum gates and derive sufficient conditions for DD-protected gates to outperform unprotected gates. Under suitable conditions, fault-tolerant quantum circuits constructed from DD-protected gates can tolerate stronger noise and have a lower overhead cost than fault-tolerant circuits constructed from unprotected gates. Our accuracy estimates depend on the dynamics of the bath that couples to the quantum computer and can be expressed either in terms of the operator norm of the bath's Hamiltonian or in terms of themore » power spectrum of bath correlations; we explain in particular how the performance of recursively generated concatenated pulse sequences can be analyzed from either viewpoint. Our results apply to Hamiltonian noise models with limited spatial correlations.« less

Free energy dissipation of the spontaneous gating of a single voltage-gated potassium channel

NASA Astrophysics Data System (ADS)

Wang, Jia-Zeng; Wang, Rui-Zhen

2018-02-01

Potassium channels mainly contribute to the resting potential and re-polarizations, with the potassium electrochemical gradient being maintained by the pump Na+/K+-ATPase. In this paper, we construct a stochastic model mimicking the kinetics of a potassium channel, which integrates temporal evolving of the membrane voltage and the spontaneous gating of the channel. Its stationary probability density functions (PDFs) are found to be singular at the boundaries, which result from the fact that the evolving rates of voltage are greater than the gating rates of the channel. We apply PDFs to calculate the power dissipations of the potassium current, the leakage, and the gating currents. On a physical perspective, the essential role of the system is the K+-battery charging the leakage (L-)battery. A part of power will inevitably be dissipated among the process. So, the efficiency of energy transference is calculated.

Free RCK arrangement in Kch, a putative escherichia coli potassium channel, as suggested by electron crystallography.

PubMed

Kuang, Qie; Purhonen, Pasi; Jegerschöld, Caroline; Koeck, Philip J B; Hebert, Hans

2015-01-06

The ligand-gated potassium channels are stimulated by various kinds of messengers. Previous studies showed that ligand-gated potassium channels containing RCK domains (the regulator of the conductance of potassium ion) form a dimer of tetramer structure through the RCK octameric gating ring in the presence of detergent. Here, we have analyzed the structure of Kch, a channel of this type from Escherichia coli, in a lipid environment using electron crystallography. By combining information from the 3D map of the transmembrane part of the protein and docking of an atomic model of a potassium channel, we conclude that the RCK domains face the solution and that an RCK octameric gating ring arrangement does not form under our crystallization condition. Our findings may be applied to other potassium channels that have an RCK gating ring arrangement. Copyright © 2015 Elsevier Ltd. All rights reserved.

Driving qubit phase gates with sech shaped pulses

NASA Astrophysics Data System (ADS)

Long, Junling; Ku, Hsiang-Sheng; Wu, Xian; Lake, Russell; Barnes, Edwin; Economou, Sophia; Pappas, David

As shown in 1932 by Rozen and Zener, the Rabi model has a unique solution whereby, for a given pulse length or amplitude, a sech(t/sigma) shaped pulse can be used to drive complete oscillations around the Bloch sphere that are independent of detuning with only a resultant detuning-dependent phase accumulation. Using this property, single qubit phase gates and two-qubit CZ gates have been proposed. In this work we explore the effect of different drive pulse shapes, i.e. square, Gaussian, and sech, as a function of detuning for Rabi oscillations of a superconducting transmon qubit. An arbitrary, single-qubit phase gate is demonstrated with the sech(t/sigma) pulse, and full tomography is performed to extract the fidelity. This is the first step towards high fidelity, low leakage two qubit CZ gates, and illustrates the efficacy of using analytic solutions of the qubit drive prior to optimal pulse shaping.

Fast activation of dihydropyridine-sensitive calcium channels of skeletal muscle. Multiple pathways of channel gating

PubMed Central

1996-01-01

Dihydropyridine (DHP) receptors of the transverse tubule membrane play two roles in excitation-contraction coupling in skeletal muscle: (a) they function as the voltage sensor which undergoes fast transition to control release of calcium from sarcoplasmic reticulum, and (b) they provide the conducting unit of a slowly activating L-type calcium channel. To understand this dual function of the DHP receptor, we studied the effect of depolarizing conditioning pulse on the activation kinetics of the skeletal muscle DHP-sensitive calcium channels reconstituted into lipid bilayer membranes. Activation of the incorporated calcium channel was imposed by depolarizing test pulses from a holding potential of -80 mV. The gating kinetics of the channel was studied with ensemble averages of repeated episodes. Based on a first latency analysis, two distinct classes of channel openings occurred after depolarization: most had delayed latencies, distributed with a mode of 70 ms (slow gating); a small number of openings had short first latencies, < 12 ms (fast gating). A depolarizing conditioning pulse to +20 mV placed 200 ms before the test pulse (-10 mV), led to a significant increase in the activation rate of the ensemble averaged-current; the time constant of activation went from tau m = 110 ms (reference) to tau m = 45 ms after conditioning. This enhanced activation by the conditioning pulse was due to the increase in frequency of fast open events, which was a steep function of the intermediate voltage and the interval between the conditioning pulse and the test pulse. Additional analysis demonstrated that fast gating is the property of the same individual channels that normally gate slowly and that the channels adopt this property after a sojourn in the open state. The rapid secondary activation seen after depolarizing prepulses is not compatible with a linear activation model for the calcium channel, but is highly consistent with a cyclical model. A six- state cyclical model is proposed for the DHP-sensitive Ca channel, which pictures the normal pathway of activation of the calcium channel as two voltage-dependent steps in sequence, plus a voltage-independent step which is rate limiting. The model reproduced well the fast and slow gating models of the calcium channel, and the effects of conditioning pulses. It is possible that the voltage-sensitive gating transitions of the DHP receptor, which occur early in the calcium channel activation sequence, could underlie the role of the voltage sensor and yield the rapid excitation-contraction coupling in skeletal muscle, through either electrostatic or allosteric linkage to the ryanodine receptors/calcium release channels. PMID:8882865

Molecular Targets for Antiepileptic Drug Development

PubMed Central

Meldrum, Brian S.; Rogawski, Michael A.

2007-01-01

Summary This review considers how recent advances in the physiology of ion channels and other potential molecular targets, in conjunction with new information on the genetics of idiopathic epilepsies, can be applied to the search for improved antiepileptic drugs (AEDs). Marketed AEDs predominantly target voltage-gated cation channels (the α subunits of voltage-gated Na+ channels and also T-type voltage-gated Ca2+ channels) or influence GABA-mediated inhibition. Recently, α2–δ voltage-gated Ca2+ channel subunits and the SV2A synaptic vesicle protein have been recognized as likely targets. Genetic studies of familial idiopathic epilepsies have identified numerous genes associated with diverse epilepsy syndromes, including genes encoding Na+ channels and GABAA receptors, which are known AED targets. A strategy based on genes associated with epilepsy in animal models and humans suggests other potential AED targets, including various voltage-gated Ca2+ channel subunits and auxiliary proteins, A- or M-type voltage-gated K+ channels, and ionotropic glutamate receptors. Recent progress in ion channel research brought about by molecular cloning of the channel subunit proteins and studies in epilepsy models suggest additional targets, including G-protein-coupled receptors, such as GABAB and metabotropic glutamate receptors; hyperpolarization-activated cyclic nucleotide-gated cation (HCN) channel subunits, responsible for hyperpolarization-activated current Ih; connexins, which make up gap junctions; and neurotransmitter transporters, particularly plasma membrane and vesicular transporters for GABA and glutamate. New information from the structural characterization of ion channels, along with better understanding of ion channel function, may allow for more selective targeting. For example, Na+ channels underlying persistent Na+ currents or GABAA receptor isoforms responsible for tonic (extrasynaptic) currents represent attractive targets. The growing understanding of the pathophysiology of epilepsy and the structural and functional characterization of the molecular targets provide many opportunities to create improved epilepsy therapies. PMID:17199015

Differential effect of brief electrical stimulation on voltage-gated potassium channels

PubMed Central

Al Abed, Amr; Buskila, Yossi; Dokos, Socrates; Lovell, Nigel H.; Morley, John W.

2017-01-01

Electrical stimulation of neuronal tissue is a promising strategy to treat a variety of neurological disorders. The mechanism of neuronal activation by external electrical stimulation is governed by voltage-gated ion channels. This stimulus, typically brief in nature, leads to membrane potential depolarization, which increases ion flow across the membrane by increasing the open probability of these voltage-gated channels. In spiking neurons, it is activation of voltage-gated sodium channels (NaV channels) that leads to action potential generation. However, several other types of voltage-gated channels are expressed that also respond to electrical stimulation. In this study, we examine the response of voltage-gated potassium channels (KV channels) to brief electrical stimulation by whole cell patch-clamp electrophysiology and computational modeling. We show that nonspiking amacrine neurons of the retina exhibit a large variety of responses to stimulation, driven by different KV-channel subtypes. Computational modeling reveals substantial differences in the response of specific KV-channel subtypes that is dependent on channel kinetics. This suggests that the expression levels of different KV-channel subtypes in retinal neurons are a crucial predictor of the response that can be obtained. These data expand our knowledge of the mechanisms of neuronal activation and suggest that KV-channel expression is an important determinant of the sensitivity of neurons to electrical stimulation. NEW & NOTEWORTHY This paper describes the response of various voltage-gated potassium channels (KV channels) to brief electrical stimulation, such as is applied during prosthetic electrical stimulation. We show that the pattern of response greatly varies between KV channel subtypes depending on activation and inactivation kinetics of each channel. Our data suggest that problems encountered when artificially stimulating neurons such as cessation in firing at high frequencies, or “fading,” may be attributed to KV-channel activation. PMID:28202576

The Structural Basis of IKs Ion-Channel Activation: Mechanistic Insights from Molecular Simulations.

PubMed

Ramasubramanian, Smiruthi; Rudy, Yoram

2018-06-05

Relating ion channel (iCh) structural dynamics to physiological function remains a challenge. Current experimental and computational techniques have limited ability to explore this relationship in atomistic detail over physiological timescales. A framework associating iCh structure to function is necessary for elucidating normal and disease mechanisms. We formulated a modeling schema that overcomes the limitations of current methods through applications of artificial intelligence machine learning. Using this approach, we studied molecular processes that underlie human IKs voltage-mediated gating. IKs malfunction underlies many debilitating and life-threatening diseases. Molecular components of IKs that underlie its electrophysiological function include KCNQ1 (a pore-forming tetramer) and KCNE1 (an auxiliary subunit). Simulations, using the IKs structure-function model, reproduced experimentally recorded saturation of gating-charge displacement at positive membrane voltages, two-step voltage sensor (VS) movement shown by fluorescence, iCh gating statistics, and current-voltage relationship. Mechanistic insights include the following: 1) pore energy profile determines iCh subconductance; 2) the entire protein structure, not limited to the pore, contributes to pore energy and channel subconductance; 3) interactions with KCNE1 result in two distinct VS movements, causing gating-charge saturation at positive membrane voltages and current activation delay; and 4) flexible coupling between VS and pore permits pore opening at lower VS positions, resulting in sequential gating. The new modeling approach is applicable to atomistic scale studies of other proteins on timescales of physiological function. Copyright © 2018 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Modeling of Single Noninactivating Na+ Channels: Evidence for Two Open and Several Fast Inactivated States

PubMed Central

The, Yu-Kai; Fernandes, Jacqueline; Popa, M. Oana; Alekov, Alexi K.; Timmer, Jens; Lerche, Holger

2006-01-01

Voltage-gated Na+ channels play a fundamental role in the excitability of nerve and muscle cells. Defects in fast Na+ channel inactivation can cause hereditary muscle diseases with hyper- or hypoexcitability of the sarcolemma. To explore the kinetics and gating mechanisms of noninactivating muscle Na+ channels on a molecular level, we analyzed single channel currents from wild-type and five mutant Na+ channels. The mutations were localized in different protein regions which have been previously shown to be important for fast inactivation (D3-D4-linker, D3/S4-S5, D4/S4-S5, D4/S6) and exhibited distinct grades of defective fast inactivation with varying levels of persistent Na+ currents caused by late channel reopenings. Different gating schemes were fitted to the data using hidden Markov models with a correction for time interval omission and compared statistically. For all investigated channels including the wild-type, two open states were necessary to describe our data. Whereas one inactivated state was sufficient to fit the single channel behavior of wild-type channels, modeling the mutants with impaired fast inactivation revealed evidence for several inactivated states. We propose a single gating scheme with two open and three inactivated states to describe the behavior of all five examined mutants. This scheme provides a biological interpretation of the collected data, based on previous investigations in voltage-gated Na+ and K+ channels. PMID:16513781

Influence of range-gated intensifiers on underwater imaging system SNR

NASA Astrophysics Data System (ADS)

Wang, Xia; Hu, Ling; Zhi, Qiang; Chen, Zhen-yue; Jin, Wei-qi

2013-08-01

Range-gated technology has been a hot research field in recent years due to its high effective back scattering eliminating. As a result, it can enhance the contrast between a target and its background and extent the working distance of the imaging system. The underwater imaging system is required to have the ability to image in low light level conditions, as well as the ability to eliminate the back scattering effect, which means that the receiver has to be high-speed external trigger function, high resolution, high sensitivity, low noise, higher gain dynamic range. When it comes to an intensifier, the noise characteristics directly restrict the observation effect and range of the imaging system. The background noise may decrease the image contrast and sharpness, even covering the signal making it impossible to recognize the target. So it is quite important to investigate the noise characteristics of intensifiers. SNR is an important parameter reflecting the noise features of a system. Through the use of underwater laser range-gated imaging prediction model, and according to the linear SNR system theory, the gated imaging noise performance of the present market adopted super second generation and generation Ⅲ intensifiers were theoretically analyzed. Based on the active laser underwater range-gated imaging model, the effect to the system by gated intensifiers and the relationship between the system SNR and MTF were studied. Through theoretical and simulation analysis to the image intensifier background noise and SNR, the different influence on system SNR by super second generation and generation Ⅲ ICCD was obtained. Range-gated system SNR formula was put forward, and compared the different effect influence on the system by using two kind of ICCDs was compared. According to the matlab simulation, a detailed analysis was carried out theoretically. All the work in this paper lays a theoretical foundation to further eliminating back scattering effect, improving image SNR, designing and manufacturing higher performance underwater range-gated imaging systems.

Slowing DNA Translocation in a Nanofluidic Field-Effect Transistor.

PubMed

Liu, Yifan; Yobas, Levent

2016-04-26

Here, we present an experimental demonstration of slowing DNA translocation across a nanochannel by modulating the channel surface charge through an externally applied gate bias. The experiments were performed on a nanofluidic field-effect transistor, which is a monolithic integrated platform featuring a 50 nm-diameter in-plane alumina nanocapillary whose entire length is surrounded by a gate electrode. The field-effect transistor behavior was validated on the gating of ionic conductance and protein transport. The gating of DNA translocation was subsequently studied by measuring discrete current dips associated with single λ-DNA translocation events under a source-to-drain bias of 1 V. The translocation speeds under various gate bias conditions were extracted by fitting event histograms of the measured translocation time to the first passage time distributions obtained from a simple 1D biased diffusion model. A positive gate bias was observed to slow the translocation of single λ-DNA chains markedly; the translocation speed was reduced by an order of magnitude from 18.4 mm/s obtained under a floating gate down to 1.33 mm/s under a positive gate bias of 9 V. Therefore, a dynamic and flexible regulation of the DNA translocation speed, which is vital for single-molecule sequencing, can be achieved on this device by simply tuning the gate bias. The device is realized in a conventional semiconductor microfabrication process without the requirement of advanced lithography, and can be potentially further developed into a compact electronic single-molecule sequencer.

Design of a Ferroelectric Programmable Logic Gate Array

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Ho, Fat Duen

2003-01-01

A programmable logic gate array has been designed utilizing ferroelectric field effect transistors. The design has only a small number of gates, but this could be scaled up to a more useful size. Using FFET's in a logic array gives several advantages. First, it allows real-time programmability to the array to give high speed reconfiguration. It also allows the array to be configured nearly an unlimited number of times, unlike a FLASH FPGA. Finally, the Ferroelectric Programmable Logic Gate Array (FPLGA) can be implemented using a smaller number of transistors because of the inherent logic characteristics of an FFET. The device was only designed and modeled using Spice models of the circuit, including the FFET. The actual device was not produced. The design consists of a small array of NAND and NOR logic gates. Other gates could easily be produced. They are linked by FFET's that control the logic flow. Timing and logic tables have been produced showing the array can produce a variety of logic combinations at a real time usable speed. This device could be a prototype for a device that could be put into imbedded systems that need the high speed of hardware implementation of logic and the complexity to need to change the logic algorithm. Because of the non-volatile nature of the FFET, it would also be useful in situations that needed to program a logic array once and use it repeatedly after the power has been shut off.

p53 activated by AND gate genetic circuit under radiation and hypoxia for targeted cancer gene therapy.

PubMed

Ding, Miao; Li, Rong; He, Rong; Wang, Xingyong; Yi, Qijian; Wang, Weidong

2015-09-01

Radio-activated gene therapy has been developed as a novel therapeutic strategy against cancer; however, expression of therapeutic gene in peritumoral tissues will result in unacceptable toxicity to normal cells. To restrict gene expression in targeted tumor mass, we used hypoxia and radiation tolerance features of tumor cells to develop a synthetic AND gate genetic circuit through connecting radiation sensitivity promoter cArG6 , heat shock response elements SNF1, HSF1 and HSE4 with retroviral vector plxsn. Their construction and dynamic activity process were identified through downstream enhanced green fluorescent protein and wtp53 expression in non-small cell lung cancer A549 cells and in a nude mice model. The result showed that AND gate genetic circuit could be activated by lower required radiation dose (6 Gy) and after activated, AND gate could induce significant apoptosis effects and growth inhibition of cancer cells in vitro and in vivo. The radiation- and hypoxia-activated AND gate genetic circuit, which could lead to more powerful target tumoricidal activity represented a promising strategy for both targeted and effective gene therapy of human lung adenocarcinoma and low dose activation character of the AND gate genetic circuit implied that this model could be further exploited to decrease side-effects of clinical radiation therapy. © 2015 The Authors. Cancer Science published by Wiley Publishing Asia Pty Ltd on behalf of Japanese Cancer Association.

Total Charge Movement per Channel

PubMed Central

Sigg, Daniel; Bezanilla, Francisco

1997-01-01

One measure of the voltage dependence of ion channel conductance is the amount of gating charge that moves during activation and vice versa. The limiting slope method, introduced by Almers (Almers, W. 1978. Rev. Physiol. Biochem. Pharmacol. 82:96–190), exploits the relationship of charge movement and voltage sensitivity, yielding a lower limit to the range of single channel gating charge displacement. In practice, the technique is plagued by low experimental resolution due to the requirement that the logarithmic voltage sensitivity of activation be measured at very low probabilities of opening. In addition, the linear sequential models to which the original theory was restricted needed to be expanded to accommodate the complexity of mechanisms available for the activation of channels. In this communication, we refine the theory by developing a relationship between the mean activation charge displacement (a measure of the voltage sensitivity of activation) and the gating charge displacement (the integral of gating current). We demonstrate that recording the equilibrium gating charge displacement as an adjunct to the limiting slope technique greatly improves accuracy under conditions where the plots of mean activation charge displacement and gross gating charge displacement versus voltage can be superimposed. We explore this relationship for a wide variety of channel models, which include those having a continuous density of states, nonsequential activation pathways, and subconductance states. We introduce new criteria for the appropriate use of the limiting slope procedure and provide a practical example of the theory applied to low resolution simulation data. PMID:8997663

Seeking structural specificity: direct modulation of pentameric ligand-gated ion channels by alcohols and general anesthetics.

PubMed

Howard, Rebecca J; Trudell, James R; Harris, R Adron

2014-01-01

Alcohols and other anesthetic agents dramatically alter neurologic function in a wide range of organisms, yet their molecular sites of action remain poorly characterized. Pentameric ligand-gated ion channels, long implicated in important direct effects of alcohol and anesthetic binding, have recently been illuminated in renewed detail thanks to the determination of atomic-resolution structures of several family members from lower organisms. These structures provide valuable models for understanding and developing anesthetic agents and for allosteric modulation in general. This review surveys progress in this field from function to structure and back again, outlining early evidence for relevant modulation of pentameric ligand-gated ion channels and the development of early structural models for ion channel function and modulation. We highlight insights and challenges provided by recent crystal structures and resulting simulations, as well as opportunities for translation of these newly detailed models back to behavior and therapy.

Seeking Structural Specificity: Direct Modulation of Pentameric Ligand-Gated Ion Channels by Alcohols and General Anesthetics

PubMed Central

Trudell, James R.; Harris, R. Adron

2014-01-01

Alcohols and other anesthetic agents dramatically alter neurologic function in a wide range of organisms, yet their molecular sites of action remain poorly characterized. Pentameric ligand-gated ion channels, long implicated in important direct effects of alcohol and anesthetic binding, have recently been illuminated in renewed detail thanks to the determination of atomic-resolution structures of several family members from lower organisms. These structures provide valuable models for understanding and developing anesthetic agents and for allosteric modulation in general. This review surveys progress in this field from function to structure and back again, outlining early evidence for relevant modulation of pentameric ligand-gated ion channels and the development of early structural models for ion channel function and modulation. We highlight insights and challenges provided by recent crystal structures and resulting simulations, as well as opportunities for translation of these newly detailed models back to behavior and therapy. PMID:24515646

Two-dimensional analytical model for dual-material control-gate tunnel FETs

NASA Astrophysics Data System (ADS)

Xu, Hui Fang; Dai, Yue Hua; Gui Guan, Bang; Zhang, Yong Feng

2016-09-01

An analytical model for a dual-material control-gate (DMCG) tunnel field effect transistor (TFET) is presented for the first time in this paper, and the influence of the mobile charges on the potential profile is taken into account. On the basis of the potential profile, the lateral electric field is derived and the expression for the drain current is obtained by integrating the band-to-band tunneling (BTBT) generation rate applicable to low-bandgap and high-bandgap materials over the tunneling region. The model also predicts the impacts of the control-gate work function on the potential and drain current. The advantage of this work is that it not only offers physical insight into device physics but also provides the basic designing guideline for DMCG TFETs, enabling the designer to optimize the device in terms of the on-state current, the on-off current ratio, and suppressed ambipolar behavior. Very good agreements for both the potential and drain current are observed between the model calculations and the simulated results.

A reliable ground bounce noise reduction technique for nanoscale CMOS circuits

NASA Astrophysics Data System (ADS)

Sharma, Vijay Kumar; Pattanaik, Manisha

2015-11-01

Power gating is the most effective method to reduce the standby leakage power by adding header/footer high-VTH sleep transistors between actual and virtual power/ground rails. When a power gating circuit transitions from sleep mode to active mode, a large instantaneous charge current flows through the sleep transistors. Ground bounce noise (GBN) is the high voltage fluctuation on real ground rail during sleep mode to active mode transitions of power gating circuits. GBN disturbs the logic states of internal nodes of circuits. A novel and reliable power gating structure is proposed in this article to reduce the problem of GBN. The proposed structure contains low-VTH transistors in place of high-VTH footer. The proposed power gating structure not only reduces the GBN but also improves other performance metrics. A large mitigation of leakage power in both modes eliminates the need of high-VTH transistors. A comprehensive and comparative evaluation of proposed technique is presented in this article for a chain of 5-CMOS inverters. The simulation results are compared to other well-known GBN reduction circuit techniques at 22 nm predictive technology model (PTM) bulk CMOS model using HSPICE tool. Robustness against process, voltage and temperature (PVT) variations is estimated through Monte-Carlo simulations.

Comparison between beta radiation dose distribution due to LDR and HDR ocular brachytherapy applicators using GATE Monte Carlo platform.

PubMed

Mostafa, Laoues; Rachid, Khelifi; Ahmed, Sidi Moussa

2016-08-01

Eye applicators with 90Sr/90Y and 106Ru/106Rh beta-ray sources are generally used in brachytherapy for the treatment of eye diseases as uveal melanoma. Whenever, radiation is used in treatment, dosimetry is essential. However, knowledge of the exact dose distribution is a critical decision-making to the outcome of the treatment. The Monte Carlo technique provides a powerful tool for calculation of the dose and dose distributions which helps to predict and determine the doses from different shapes of various types of eye applicators more accurately. The aim of this work consisted in using the Monte Carlo GATE platform to calculate the 3D dose distribution on a mathematical model of the human eye according to international recommendations. Mathematical models were developed for four ophthalmic applicators, two HDR 90Sr applicators SIA.20 and SIA.6, and two LDR 106Ru applicators, a concave CCB model and a flat CCB model. In present work, considering a heterogeneous eye phantom and the chosen tumor, obtained results with the use of GATE for mean doses distributions in a phantom and according to international recommendations show a discrepancy with respect to those specified by the manufacturers. The QC of dosimetric parameters shows that contrarily to the other applicators, the SIA.20 applicator is consistent with recommendations. The GATE platform show that the SIA.20 applicator present better results, namely the dose delivered to critical structures were lower compared to those obtained for the other applicators, and the SIA.6 applicator, simulated with MCNPX generates higher lens doses than those generated by GATE. Copyright © 2016 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Non-contact respiration monitoring for in-vivo murine micro computed tomography: characterization and imaging applications

NASA Astrophysics Data System (ADS)

Burk, Laurel M.; Lee, Yueh Z.; Wait, J. Matthew; Lu, Jianping; Zhou, Otto Z.

2012-09-01

A cone beam micro-CT has previously been utilized along with a pressure-tracking respiration sensor to acquire prospectively gated images of both wild-type mice and various adult murine disease models. While the pressure applied to the abdomen of the subject by this sensor is small and is generally without physiological effect, certain disease models of interest, as well as very young animals, are prone to atelectasis with added pressure, or they generate too weak a respiration signal with this method to achieve optimal prospective gating. In this work we present a new fibre-optic displacement sensor which monitors respiratory motion of a subject without requiring physical contact. The sensor outputs an analogue signal which can be used for prospective respiration gating in micro-CT imaging. The device was characterized and compared against a pneumatic air chamber pressure sensor for the imaging of adult wild-type mice. The resulting images were found to be of similar quality with respect to physiological motion blur; the quality of the respiration signal trace obtained using the non-contact sensor was comparable to that of the pressure sensor and was superior for gating purposes due to its better signal-to-noise ratio. The non-contact sensor was then used to acquire in-vivo micro-CT images of a murine model for congenital diaphragmatic hernia and of 11-day-old mouse pups. In both cases, quality CT images were successfully acquired using this new respiration sensor. Despite the presence of beam hardening artefacts arising from the presence of a fibre-optic cable in the imaging field, we believe this new technique for respiration monitoring and gating presents an opportunity for in-vivo imaging of disease models which were previously considered too delicate for established animal handling methods.

Gate-Variable Mid-Infrared Optical Transitions in a (Bi1-xSbx)2Te3 Topological Insulator.

PubMed

Whitney, William S; Brar, Victor W; Ou, Yunbo; Shao, Yinming; Davoyan, Artur R; Basov, D N; He, Ke; Xue, Qi-Kun; Atwater, Harry A

2017-01-11

We report mid-infrared spectroscopy measurements of ultrathin, electrostatically gated (Bi 1-x Sb x ) 2 Te 3 topological insulator films in which we observe several percent modulation of transmittance and reflectance as gating shifts the Fermi level. Infrared transmittance measurements of gated films were enabled by use of an epitaxial lift-off method for large-area transfer of topological insulator films from infrared-absorbing SrTiO 3 growth substrates to thermal oxidized silicon substrates. We combine these optical experiments with transport measurements and angle-resolved photoemission spectroscopy to identify the observed spectral modulation as a gate-driven transfer of spectral weight between both bulk and 2D topological surface channels and interband and intraband channels. We develop a model for the complex permittivity of gated (Bi 1-x Sb x ) 2 Te 3 and find a good match to our experimental data. These results open the path for layered topological insulator materials as a new candidate for tunable, ultrathin infrared optics and highlight the possibility of switching topological optoelectronic phenomena between bulk and spin-polarized surface regimes.

Generalized filtering of laser fields in optimal control theory: application to symmetry filtering of quantum gate operations

NASA Astrophysics Data System (ADS)

Schröder, Markus; Brown, Alex

2009-10-01

We present a modified version of a previously published algorithm (Gollub et al 2008 Phys. Rev. Lett.101 073002) for obtaining an optimized laser field with more general restrictions on the search space of the optimal field. The modification leads to enforcement of the constraints on the optimal field while maintaining good convergence behaviour in most cases. We demonstrate the general applicability of the algorithm by imposing constraints on the temporal symmetry of the optimal fields. The temporal symmetry is used to reduce the number of transitions that have to be optimized for quantum gate operations that involve inversion (NOT gate) or partial inversion (Hadamard gate) of the qubits in a three-dimensional model of ammonia.

Adiabatic gate teleportation.

PubMed

Bacon, Dave; Flammia, Steven T

2009-09-18

The difficulty in producing precisely timed and controlled quantum gates is a significant source of error in many physical implementations of quantum computers. Here we introduce a simple universal primitive, adiabatic gate teleportation, which is robust to timing errors and many control errors and maintains a constant energy gap throughout the computation above a degenerate ground state space. This construction allows for geometric robustness based upon the control of two independent qubit interactions. Further, our piecewise adiabatic evolution easily relates to the quantum circuit model, enabling the use of standard methods from fault-tolerance theory for establishing thresholds.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gelinck, G. H., E-mail: Gerwin.Gelinck@tno.nl; Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven; Breemen, A. J. J. M. van

Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

Locating Anomalies in Complex Data Sets Using Visualization and Simulation

NASA Technical Reports Server (NTRS)

Panetta, Karen

2001-01-01

The research goals are to create a simulation framework that can accept any combination of models written at the gate or behavioral level. The framework provides the ability to fault simulate and create scenarios of experiments using concurrent simulation. In order to meet these goals we have had to fulfill the following requirements. The ability to accept models written in VHDL, Verilog or the C languages. The ability to propagate faults through any model type. The ability to create experiment scenarios efficiently without generating every possible combination of variables. The ability to accept adversity of fault models beyond the single stuck-at model. Major development has been done to develop a parser that can accept models written in various languages. This work has generated considerable attention from other universities and industry for its flexibility and usefulness. The parser uses LEXX and YACC to parse Verilog and C. We have also utilized our industrial partnership with Alternative System's Inc. to import vhdl into our simulator. For multilevel simulation, we needed to modify the simulator architecture to accept models that contained multiple outputs. This enabled us to accept behavioral components. The next major accomplishment was the addition of "functional fault models". Functional fault models change the behavior of a gate or model. For example, a bridging fault can make an OR gate behave like an AND gate. This has applications beyond fault simulation. This modeling flexibility will make the simulator more useful for doing verification and model comparison. For instance, two or more versions of an ALU can be comparatively simulated in a single execution. The results will show where and how the models differed so that the performance and correctness of the models may be evaluated. A considerable amount of time has been dedicated to validating the simulator performance on larger models provided by industry and other universities.

Breath-held MR Cholangiopancreatography (MRCP) using a 3D Dixon fat–water separated balanced steady state free precession sequence

PubMed Central

Glockner, James F.; Saranathan, Manojkumar; Bayram, Ersin; Lee, Christine U.

2014-01-01

A novel 3D breath-held Dixon fat–water separated balanced steady state free precession (b-SSFP) sequence for MR cholangiopancreatography (MRCP) is described and its potential clinical utility assessed in a series of patients. The main motivation is to develop a robust breath-held alternative to the respiratory gated 3D Fast Spin Echo (FSE) sequence, the current clinical sequence of choice for MRCP. Respiratory gated acquisitions are susceptible to motion artifacts and blurring in patients with significant diaphragmatic drift, erratic respiratory rhythms or sleep apnea. A two point Dixon fat–water separation scheme was developed which eliminates signal loss arising from B0 inhomogeneity effects and minimizes artifacts from perturbation of the b-SSFP steady state. Preliminary results from qualitative analysis of 49 patients demonstrate robust performance of the 3D Dixon b-SSFP sequence with diagnostic image quality acquired in a 20–24 s breath-hold. PMID:23876262

Closing the gate in the limbic striatum: prefrontal suppression of hippocampal and thalamic inputs

PubMed Central

Calhoon, Gwendolyn G.; O’Donnell, Patricio

2013-01-01

SUMMARY Many brain circuits control behavior by integrating information arising from separate inputs onto a common target neuron. Neurons in the ventral striatum (VS) receive converging excitatory afferents from the prefrontal cortex (PFC), hippocampus (HP), and thalamus, among other structures, and the integration of these inputs is critical for shaping goal-directed behaviors. Although HP inputs have been described as gating PFC throughput in the VS, recent data reveal that the VS desynchronizes from the HP during epochs of burst-like PFC activity related to decision-making. It is therefore possible that PFC inputs locally attenuate responses to other glutamatergic inputs to the VS. Here, we found that delivering trains of stimuli to the PFC suppresses HP- and thalamus-evoked synaptic responses in the VS, in part through activation of inhibitory processes. This interaction may enable the PFC to exert influence on basal ganglia loops during decision-making instances with minimal disturbance from ongoing contextual inputs. PMID:23583113

Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings

DOE PAGES

Pica, G.; Lovett, B. W.; Bhatt, R. N.; ...

2016-01-14

A scaled quantum computer with donor spins in silicon would benefit from a viable semiconductor framework and a strong inherent decoupling of the qubits from the noisy environment. Coupling neighboring spins via the natural exchange interaction according to current designs requires gate control structures with extremely small length scales. In this work, we present a silicon architecture where bismuth donors with long coherence times are coupled to electrons that can shuttle between adjacent quantum dots, thus relaxing the pitch requirements and allowing space between donors for classical control devices. An adiabatic SWAP operation within each donor/dot pair solves the scalabilitymore » issues intrinsic to exchange-based two-qubit gates, as it does not rely on subnanometer precision in donor placement and is robust against noise in the control fields. In conclusion, we use this SWAP together with well established global microwave Rabi pulses and parallel electron shuttling to construct a surface code that needs minimal, feasible local control.« less

Self-Heating Effects In Polysilicon Source Gated Transistors

PubMed Central

Sporea, R. A.; Burridge, T.; Silva, S. R. P.

2015-01-01

Source-gated transistors (SGTs) are thin-film devices which rely on a potential barrier at the source to achieve high gain, tolerance to fabrication variability, and low series voltage drop, relevant to a multitude of energy-efficient, large-area, cost effective applications. The current through the reverse-biased source barrier has a potentially high positive temperature coefficient, which may lead to undesirable thermal runaway effects and even device failure through self-heating. Using numerical simulations we show that, even in highly thermally-confined scenarios and at high current levels, self-heating is insufficient to compromise device integrity. Performance is minimally affected through a modest increase in output conductance, which may limit the maximum attainable gain. Measurements on polysilicon devices confirm the simulated results, with even smaller penalties in performance, largely due to improved heat dissipation through metal contacts. We conclude that SGTs can be reliably used for high gain, power efficient analog and digital circuits without significant performance impact due to self-heating. This further demonstrates the robustness of SGTs. PMID:26351099

First-principles study on leakage current caused by oxygen vacancies at HfO2/SiO2/Si interface

NASA Astrophysics Data System (ADS)

Takagi, Kensuke; Ono, Tomoya

2018-06-01

The relationship between the position of oxygen vacancies in HfO2/SiO2/Si gate stacks and the leakage current is studied by first-principles electronic-structure and electron-conduction calculations. We find that the increase in the leakage current due to the creation of oxygen vacancies in the HfO2 layer is much larger than that in the SiO2 interlayer. According to previous first-principles total energy calculations, the formation energy of oxygen vacancies is smaller in the SiO2 interlayer than that in the HfO2 layer under the same conditions. Therefore, oxygen vacancies will be attracted from the SiO2 interlayer to minimize the energy, thermodynamically justifying the scavenging technique. Thus, the scavenging process efficiently improves the dielectric constant of HfO2-based gate stacks without increasing the number of oxygen vacancies, which cause the dielectric breakdown.

Survey Of High Speed Test Techniques

NASA Astrophysics Data System (ADS)

Gheewala, Tushar

1988-02-01

The emerging technologies for the characterization and production testing of high-speed devices and integrated circuits are reviewed. The continuing progress in the field of semiconductor technologies will, in the near future, demand test techniques to test 10ps to lOOps gate delays, 10 GHz to 100 GHz analog functions and 10,000 to 100,000 gates on a single chip. Clearly, no single test technique would provide a cost-effective answer to all the above demands. A divide-and-conquer approach based on a judicial selection of parametric, functional and high-speed tests will be required. In addition, design-for-test methods need to be pursued which will include on-chip test electronics as well as circuit techniques that minimize the circuit performance sensitivity to allowable process variations. The electron and laser beam based test technologies look very promising and may provide the much needed solutions to not only the high-speed test problem but also to the need for high levels of fault coverage during functional testing.

A 4-fJ/Spike Artificial Neuron in 65 nm CMOS Technology

PubMed Central

Sourikopoulos, Ilias; Hedayat, Sara; Loyez, Christophe; Danneville, François; Hoel, Virginie; Mercier, Eric; Cappy, Alain

2017-01-01

As Moore's law reaches its end, traditional computing technology based on the Von Neumann architecture is facing fundamental limits. Among them is poor energy efficiency. This situation motivates the investigation of different processing information paradigms, such as the use of spiking neural networks (SNNs), which also introduce cognitive characteristics. As applications at very high scale are addressed, the energy dissipation needs to be minimized. This effort starts from the neuron cell. In this context, this paper presents the design of an original artificial neuron, in standard 65 nm CMOS technology with optimized energy efficiency. The neuron circuit response is designed as an approximation of the Morris-Lecar theoretical model. In order to implement the non-linear gating variables, which control the ionic channel currents, transistors operating in deep subthreshold are employed. Two different circuit variants describing the neuron model equations have been developed. The first one features spike characteristics, which correlate well with a biological neuron model. The second one is a simplification of the first, designed to exhibit higher spiking frequencies, targeting large scale bio-inspired information processing applications. The most important feature of the fabricated circuits is the energy efficiency of a few femtojoules per spike, which improves prior state-of-the-art by two to three orders of magnitude. This performance is achieved by minimizing two key parameters: the supply voltage and the related membrane capacitance. Meanwhile, the obtained standby power at a resting output does not exceed tens of picowatts. The two variants were sized to 200 and 35 μm2 with the latter reaching a spiking output frequency of 26 kHz. This performance level could address various contexts, such as highly integrated neuro-processors for robotics, neuroscience or medical applications. PMID:28360831

Determination of Flux-Gate Magnetometer Spin Axis Offsets with the Electron Drift Instrument

NASA Astrophysics Data System (ADS)

Plaschke, Ferdinand; Nakamura, Rumi; Giner, Lukas; Teubenbacher, Robert; Chutter, Mark; Leinweber, Hannes K.; Magnes, Werner

2014-05-01

Spin-stabilization of spacecraft enormously supports the in-flight calibration of onboard flux-gate magnetometers (FGMs): eight out of twelve calibration parameters can be determined by minimization of spin tone and harmonics in the calibrated magnetic field measurements. From the remaining four parameters, the spin axis offset is usually obtained by analyzing observations of Alfvénic fluctuations in the solar wind. If solar wind measurements are unavailable, other methods for spin axis offset determination need to be used. We present two alternative methods that are based on the comparison of FGM and electron drift instrument (EDI) data: (1) EDI measures the gyration periods of instrument-emitted electrons in the ambient magnetic field. They are inversely proportional to the magnetic field strength. Differences between FGM and EDI measured field strengths can be attributed to inaccuracies in spin axis offset, if the other calibration parameters are accurately known. (2) For EDI electrons to return to the spacecraft, they have to be sent out in perpendicular direction to the ambient magnetic field. Minimization of the variance of electron beam directions with respect to the FGM-determined magnetic field direction also yields an estimate of the spin axis offset. Prior to spin axis offset determination, systematic inaccuracies in EDI gyration period measurements and in the transformation of EDI beam directions into the FGM spin-aligned reference coordinate system have to be corrected. We show how this can be done by FGM/EDI data comparison, as well.

Laser-Induced Incandescence Calibration via Gravimetric Sampling

NASA Technical Reports Server (NTRS)

VanderWal, R. L.; Zhou, Z.; Choi, M. Y.

1995-01-01

Various beam imaging and/or sheet forming optics delivered light at 1064 nm from a pulsed Nd:YAG laser for use either as a beam of 3 mm radius or as a laser sheet. Imaging measurements were performed with a grated intensified array camera equipped with an ultraviolet f4.5 lens and a 40 mm extension tube. Point measurements were performed using an ultraviolet 250 mm focal length lens to collect and focus the laser induced incandescence (LII) signal into a 1 meter long quartz optical fiber which directed the LII signal to a 1/4 meter monochromator. An aperture preceding the lens restricted the signal collection region to 1 cm along the laser beam at the center of the gravimetric chimney. Signals from the PMT were processed by a boxcar integrator whereas the images were captured digitally using a frame-grabber with 16 MByte of on-board memory. Both 'point' and planar measurements were made with detector gates of 250 ns to minimize possible morphology bias in collection of the LII signal. Additionally, the imaging measurements were performed with broadband spectral collection of the LII signal to maximize the signal and again minimize any potential effects of morphology dependent heating and/or cooling rates. Digital delay generators controlled the firing of he laser, detector gates and data acquisition. Neutral density filters were used for both sets of measurements to maintain signal levels within linear dynamic ranges of the detectors, the range being determined prior to experiments.

Entangled spin chain

NASA Astrophysics Data System (ADS)

Salberger, Olof; Korepin, Vladimir

We introduce a new model of interacting spin 1/2. It describes interactions of three nearest neighbors. The Hamiltonian can be expressed in terms of Fredkin gates. The Fredkin gate (also known as the controlled swap gate) is a computational circuit suitable for reversible computing. Our construction generalizes the model presented by Peter Shor and Ramis Movassagh to half-integer spins. Our model can be solved by means of Catalan combinatorics in the form of random walks on the upper half plane of a square lattice (Dyck walks). Each Dyck path can be mapped on a wave function of spins. The ground state is an equally weighted superposition of Dyck walks (instead of Motzkin walks). We can also express it as a matrix product state. We further construct a model of interacting spins 3/2 and greater half-integer spins. The models with higher spins require coloring of Dyck walks. We construct a SU(k) symmetric model (where k is the number of colors). The leading term of the entanglement entropy is then proportional to the square root of the length of the lattice (like in the Shor-Movassagh model). The gap closes as a high power of the length of the lattice [5, 11].

Realization of the three-qubit quantum controlled gate based on matching Hermitian generators

NASA Astrophysics Data System (ADS)

Gautam, Kumar; Rawat, Tarun Kumar; Parthasarathy, Harish; Sharma, Navneet; Upadhyaya, Varun

2017-05-01

This paper deals with the design of quantum unitary gate by matching the Hermitian generators. A given complicated quantum controlled gate is approximated by perturbing a simple quantum system with a small time-varying potential. The basic idea is to evaluate the generator H_φ of the perturbed system approximately using first-order perturbation theory in the interaction picture. H_φ depends on a modulating signal φ(t){:} 0≤t≤T which modulates a known potential V. The generator H_φ of the given gate U_g is evaluated using H_g=ι log U_g. The optimal modulating signal φ(t) is chosen so that \\Vert H_g - H_φ \\Vert is a minimum. The simple quantum system chosen for our simulation is harmonic oscillator with charge perturbed by an electric field that is a constant in space but time varying and is controlled externally. This is used to approximate the controlled unitary gate obtained by perturbing the oscillator with an anharmonic term proportional to q^3. Simulations results show significantly small noise-to-signal ratio. Finally, we discuss how the proposed method is particularly suitable for designing some commonly used unitary gates. Another example was chosen to illustrate this method of gate design is the ion-trap model.

Kinetic Contributions to Gating by Interactions Unique to N-methyl-d-aspartate (NMDA) Receptors*

PubMed Central

Borschel, William F.; Cummings, Kirstie A.; Tindell, LeeAnn K.; Popescu, Gabriela K.

2015-01-01

Among glutamate-gated channels, NMDA receptors produce currents that subside with unusually slow kinetics, and this feature is essential to the physiology of central excitatory synapses. Relative to the homologous AMPA and kainate receptors, NMDA receptors have additional intersubunit contacts in the ligand binding domain that occur at both conserved and non-conserved sites. We examined GluN1/GluN2A single-channel currents with kinetic analyses and modeling to probe these class-specific intersubunit interactions for their role in glutamate binding and receptor gating. We found that substitutions that eliminate such interactions at non-conserved sites reduced stationary gating, accelerated deactivation, and imparted sensitivity to aniracetam, an AMPA receptor-selective positive modulator. Abolishing unique contacts at conserved sites also reduced stationary gating and accelerated deactivation. These results show that contacts specific to NMDA receptors, which brace the heterodimer interface within the ligand binding domain, stabilize actively gating receptor conformations and result in longer bursts and slower deactivations. They support the view that the strength of the heterodimer interface modulates gating in both NMDA and non-NMDA receptors and that unique interactions at this interface are responsible in part for basic differences between the kinetics of NMDA and non-NMDA currents at glutamatergic synapses. PMID:26370091

Efforts to reduce mortality to hydroelectric turbine-passed fish: locating and quantifying damaging shear stresses.

PubMed

Cada, Glenn; Loar, James; Garrison, Laura; Fisher, Richard; Neitzel, Duane

2006-06-01

Severe fluid forces are believed to be a source of injury and mortality to fish that pass through hydroelectric turbines. A process is described by which laboratory bioassays, computational fluid dynamics models, and field studies can be integrated to evaluate the significance of fluid shear stresses that occur in a turbine. Areas containing potentially lethal shear stresses were identified near the stay vanes and wicket gates, runner, and in the draft tube of a large Kaplan turbine. However, under typical operating conditions, computational models estimated that these dangerous areas comprise less than 2% of the flow path through the modeled turbine. The predicted volumes of the damaging shear stress zones did not correlate well with observed fish mortality at a field installation of this turbine, which ranged from less than 1% to nearly 12%. Possible reasons for the poor correlation are discussed. Computational modeling is necessary to develop an understanding of the role of particular fish injury mechanisms, to compare their effects with those of other sources of injury, and to minimize the trial and error previously needed to mitigate those effects. The process we describe is being used to modify the design of hydroelectric turbines to improve fish passage survival.

A gated deep inspiration breath‐hold radiation therapy technique using a linear position transducer

PubMed Central

Denissova, Svetlana I.; Yewondwossen, Mammo H.; Andrew, John W.; Hale, Michael E.; Murphy, Carl H.; Purcell, Scott R.

2005-01-01

For patients with thoracic and abdominal lesions, respiration‐induced internal organ motion and deformations during radiation therapy are limiting factors for the administration of high radiation dose. To increase the dose to the tumor and to reduce margins, tumor movement during treatment must be minimized. Currently, several types of breath‐synchronized systems are in use. These systems include respiratory gating, deep inspiration breath‐hold, active breathing control, and voluntary breath‐hold. We used a linear position transducer (LPT) to monitor changes in a patient's abdominal cross‐sectional area. The LPT tracks changes in body circumference during the respiratory cycle using a strap connected to the LPT and wrapped around the patient's torso. The LPT signal is monitored by a computer that provides a real‐time plot of the patient's breathing pattern. In our technique, we use a CT study with multiple gated acquisitions. The Philips Medical Systems Q series CT imaging system is capable of operating in conjunction with a contrast injector. This allows a patient performing the deep inspiration breath‐hold maneuver to send a signal to trigger the CT scanner acquisitions. The LPT system, when interfaced to a LINAC, allows treatment to be delivered only during deep inspiration breath‐hold periods. Treatment stops automatically if the lung volume drops from a preset value. The whole treatment can be accomplished with 1 to 3 breath‐holds. This technique has been used successfully to combine automatically gated radiation delivery with the deep inspiration breath‐hold technique. This improves the accuracy of treatment for moving tumors, providing better target coverage, sparing more healthy tissue, and saving machine time. PACS numbers: 87.53.2j, 87.57.‐s PMID:15770197

Imaged-guided liver stereotactic body radiotherapy using VMAT and real-time adaptive tumor gating. Concerns about technique and preliminary clinical results.

PubMed

Llacer-Moscardo, Carmen; Riou, Olivier; Azria, David; Bedos, Ludovic; Ailleres, Norbert; Quenet, Francois; Rouanet, Philippe; Ychou, Marc; Fenoglietto, Pascal

2017-01-01

Motion management is a major challenge in abdominal SBRT. We present our study of SBRT for liver tumors using intrafraction motion review (IMR) allowing simultaneous KV information and MV delivery to synchronize the beam during gated RapidArc treatment. Between May 2012 and March 2015, 41 patients were treated by liver SBRT using gated RapidArc technique in a Varian Novalis Truebeam STx linear accelerator. PTV was created by expanding 5 mm from the ITV. Dose prescription ranged from 40 to 50 Gy in 5-10 fractions. The prescribed dose and fractionation were chosen depending on hepatic function and dosimetric results. Thirty-four patients with a minimal follow-up of six months were analyzed for local control and toxicity. Accuracy for tumor repositioning was evaluated for the first ten patients. With a median follow-up of 13 months, the treatment was well tolerated and no patient presented RILD, perforation or gastrointestinal bleeding. Acute toxicity was found in 3 patients with G1 abdominal pain, 2 with G1 nausea, 10 with G1 asthenia and 1 with G2 asthenia. 6 patients presented asymptomatic transitory perturbation of liver enzymes. In-field local control was 90.3% with 7 complete responses, 14 partial responses and 7 stabilisations. 3 patients evolved "in field". 12 patients had an intrahepatic progression "out of field". Mean intrafraction deviation of fiducials in the craneo-caudal direction was 0.91 mm (0-6 mm). The clinical tolerance and oncological outcomes were favorable when using image-guided liver SBRT with real-time adaptive tumor gating.

SU-E-T-247: Determinations of the Optimal Phase for Respiratory Gated Radiotherapy From Statistical Analysis Using a Visible Guidance System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oh, S; Yea, J; Kang, M

Purpose: Respiratory gated radiation therapy (RGRT) is used to minimize the radiation dose to normal tissue in lung cancer patients. Determination of the optimal point in the respiratory phase of a patient is important in RGRT but it is not easy. The goal of the present study was to see if a visible guidance system is helpful in determining the optimal phase in respiratory gated therapy. Methods: The breathing signals of 23 lung cancer patients were recorded with a Real-time Position Management (RPM) respiratory gating system (Varian, USA). The patients underwent breathing training with our visible guidance system, after whichmore » their breathing signals were recorded during 5 min of free breathing and 5 min of guided breathing. The breathing signals recorded between 3 and 5 min before and after training were compared. We performed statistical analysis of the breathing signals to find the optimal duty cycle in guided breathing for RGRT. Results: The breathing signals aided by the visible guidance system had more regular cycles over time and smaller variations in the positions of the marker block than the free breathing signals. Of the 23 lung cancer patients, 19 showed statistically significant differences by time when the values obtained before and after breathing were compared (p < 0.05); 30% and 40% of the duty cycle, respectively, was determined to be the most effective, and the corresponding phases were 30 60% (duty cycle, 30%; p < 0.05) and 30 70% (duty cycle, 40%; p < 0.05). Conclusion: Respiratory regularity was significantly improved with the use of the RPM with our visible guiding system; therefore, it would help improve the accuracy and efficiency of RGRT.« less

Use of ECG-gated computed tomography, echocardiography and selective angiography in five dogs with pulmonic stenosis and one dog with pulmonic stenosis and aberrant coronary arteries.

PubMed

Laborda-Vidal, P; Pedro, B; Baker, M; Gelzer, A R; Dukes-McEwan, J; Maddox, T W

2016-12-01

Pulmonic stenosis (PS) is the most common congenital cardiac disease in dogs. Boxers and English bulldogs are among the most commonly affected breeds and also commonly associated with an aberrant coronary artery (CA). If an aberrant CA is suspected and balloon valvuloplasty indicated, an intra-operative angiography is recommended prior to the procedure. ECG-gated computed tomography (CT) can be used to screen for CA anomalies in a quick and minimally-invasive way (preventing side effects associated with selective catheter angiography) and allowing early planning of the procedure. The aim of this case series was to report CT findings associated with PS diagnosed by echocardiography. Our database was retrospectively searched for cases of dogs with PS diagnosed by echocardiography, where an ECG-gated CT was performed. A total of six cases were retrieved: all were diagnosed with severe PS. Four dogs had concurrent congenital defects: two dogs had a patent ductus arteriosus, one dog had a ventricular septal defect and an overriding aorta, one dog had an aberrant CA. Detailed CT findings of all cases were reported, including one case of a patent ductus arteriosus and an overriding aorta not identified by transthoracic echocardiography. In addition, an abnormal single left coronary ostium, with a pre-pulmonic right CA was described. In conclusion, despite echocardiography remaining the gold standard for diagnosis and assessment of PS, ECG-gated-CT angiography is a complementary diagnostic method that may provide additional relevant information, shorten surgery/anaesthesia time and reduce the amount of radiation to which the clinician is subjected. Copyright © 2016 Elsevier B.V. All rights reserved.

Coupling Computer-Aided Process Simulation and Estimations of Emissions and Land Use for Rapid Life Cycle Inventory Modeling

EPA Science Inventory

A methodology is described for developing a gate-to-gate life cycle inventory (LCI) of a chemical manufacturing process to support the application of life cycle assessment in the design and regulation of sustainable chemicals. The inventories were derived by first applying proces...

Effects of trap-assisted tunneling on gate-induced drain leakage in silicon-germanium channel p-type FET for scaled supply voltages

NASA Astrophysics Data System (ADS)

Tiwari, Vishal A.; Divakaruni, Rama; Hook, Terence B.; Nair, Deleep R.

2016-04-01

Silicon-germanium is considered as an alternative channel material to silicon p-type FET (pFET) for the development of energy efficient high performance transistors for 28 nm and beyond in a high-k metal gate technology because of its lower threshold voltage and higher mobility. However, gate-induced drain leakage (GIDL) is a concern for high threshold voltage device design because of tunneling at reduced bandgap. In this work, the trap-assisted tunneling and band-to-band tunneling (BTBT) effects on GIDL is analyzed and modeled for SiGe pFETs. Experimental results and Monte Carlo simulation results reveal that the pre-halo germanium pre-amorphization implant used to contain the short channel effects contribute to GIDL at the drain sidewall in addition to GIDL due to BTBT in SiGe devices. The results are validated by comparing the experimental observations with the numerical simulation and a set of calibrated models are used to describe the GIDL mechanisms for various drain and gate bias.

Model-based restoration using light vein for range-gated imaging systems.

PubMed

Wang, Canjin; Sun, Tao; Wang, Tingfeng; Wang, Rui; Guo, Jin; Tian, Yuzhen

2016-09-10

The images captured by an airborne range-gated imaging system are degraded by many factors, such as light scattering, noise, defocus of the optical system, atmospheric disturbances, platform vibrations, and so on. The characteristics of low illumination, few details, and high noise make the state-of-the-art restoration method fail. In this paper, we present a restoration method especially for range-gated imaging systems. The degradation process is divided into two parts: the static part and the dynamic part. For the static part, we establish the physical model of the imaging system according to the laser transmission theory, and estimate the static point spread function (PSF). For the dynamic part, a so-called light vein feature extraction method is presented to estimate the fuzzy parameter of the atmospheric disturbance and platform movement, which make contributions to the dynamic PSF. Finally, combined with the static and dynamic PSF, an iterative updating framework is used to restore the image. Compared with the state-of-the-art methods, the proposed method can effectively suppress ringing artifacts and achieve better performance in a range-gated imaging system.

Simulation of the effects of proposed tide gates on circulation, flushing, and water quality in residential canals, Cape Coral Florida

USGS Publications Warehouse

Goodwin, Carl R.

1991-01-01

Decades of dredging and filling of Florida's low-lying coastal wetlands have produced thousands of miles of residential tidal canals and adjacent waterfront property. Typically, these canals are poorly flushed, and over time, accumulated organic-rich bottom materials, contribute to an increasingly severe degraded water quality. One-dimensional hydrodynamic and constituent-transport models were applied to two dead-end canal systems to determine the effects of canal system interconnection using tide gates on water circulation and constituent flushing. The model simulates existing and possible future circulation and flushing conditions in about 29 miles of the approximately 130 miles of tidally influenced canals in Cape Coral, located on the central west coast of peninsular Florida. Model results indicate that tidal water-level differences between the two canal systems can be converted to kinetic energy, in the form of increased water circulation, but the use of one-way tide gate interconnections. Computations show that construction of from one to four tide gates will cause replacement of a volume of water equivalent to the total volume of canals in both systems in 15 to 9 days, respectively. Because some canals flush faster than others, 47 and 21 percent of the original canal water will remain in both systems 50 days after start of operation of one and four tide gates, respectively. Some of the effects that such increased flushing are expected to have include reduced density stratification and associated dissolved-oxygen depletion in canal bottom waters, increased localized reaeration, and more efficient discharge of stormwater runoff entering the canals.

A hydrophobic gate in an ion channel: the closed state of the nicotinic acetylcholine receptor

NASA Astrophysics Data System (ADS)

Beckstein, Oliver; Sansom, Mark S. P.

2006-06-01

The nicotinic acetylcholine receptor (nAChR) is the prototypic member of the 'Cys-loop' superfamily of ligand-gated ion channels which mediate synaptic neurotransmission, and whose other members include receptors for glycine, γ-aminobutyric acid and serotonin. Cryo-electron microscopy has yielded a three-dimensional structure of the nAChR in its closed state. However, the exact nature and location of the channel gate remains uncertain. Although the transmembrane pore is constricted close to its center, it is not completely occluded. Rather, the pore has a central hydrophobic zone of radius about 3 Å. Model calculations suggest that such a constriction may form a hydrophobic gate, preventing movement of ions through a channel. We present a detailed and quantitative simulation study of the hydrophobic gating model of the nicotinic receptor, in order to fully evaluate this hypothesis. We demonstrate that the hydrophobic constriction of the nAChR pore indeed forms a closed gate. Potential of mean force (PMF) calculations reveal that the constriction presents a barrier of height about 10 kT to the permeation of sodium ions, placing an upper bound on the closed channel conductance of 0.3 pS. Thus, a 3 Å radius hydrophobic pore can form a functional barrier to the permeation of a 1 Å radius Na+ ion. Using a united-atom force field for the protein instead of an all-atom one retains the qualitative features but results in differing conductances, showing that the PMF is sensitive to the detailed molecular interactions.

Helical prospective ECG-gating in cardiac computed tomography: radiation dose and image quality.

PubMed

DeFrance, Tony; Dubois, Eric; Gebow, Dan; Ramirez, Alex; Wolf, Florian; Feuchtner, Gudrun M

2010-01-01

Helical prospective ECG-gating (pECG) may reduce radiation dose while maintaining the advantages of helical image acquisition for coronary computed tomography angiography (CCTA). Aim of this study was to evaluate helical pECG-gating in CCTA in regards to radiation dose and image quality. 86 patients undergoing 64-multislice CCTA were enrolled. pECG-gating was performed in patients with regular heart rates (HR) < 65 bpm; with the gating window set at 70-85% of the cardiac cycle. All patients received oral and some received additional IV beta-blockers to achieve HR < 65 bpm. In patients with higher or irregular HR, or for functional evaluation, retrospective ECG-gating (rECG) was performed. The average X-ray dose was estimated from the dose length product. Each arterial segment (modified AHA/ACC 17-segment-model) was evaluated on a 4-point image quality scale (4 = excellent; 3 = good, mild artefact; 2 = acceptable, some artefact, 1 = uninterpretable). pECG-gating was applied in 57 patients, rECG-gating in 29 patients. There was no difference in age, gender, body mass index, scan length or tube output settings between both groups. HR in the pECG-group was 54.7 bpm (range, 43-64). The effective radiation dose was significantly lower for patients scanned with pECG-gating with mean 6.9 mSv +/- 1.9 (range, 2.9-10.7) compared to rECG with 16.9 mSv +/- 4.1 (P < 0.001), resulting in a mean dose reduction of 59.2%. For pECG-gating, out of 969 coronary segments, 99.3% were interpretable. Image quality was excellent in 90.2%, good in 7.8%, acceptable in 1.3% and non-interpretable in 0.7% (n = 7 segments). For patients with steady heart rates <65 bpm, helical prospective ECG-gating can significantly lower the radiation dose while maintaining high image quality.

4D micro-CT using fast prospective gating

NASA Astrophysics Data System (ADS)

Guo, Xiaolian; Johnston, Samuel M.; Qi, Yi; Johnson, G. Allan; Badea, Cristian T.

2012-01-01

Micro-CT is currently used in preclinical studies to provide anatomical information. But, there is also significant interest in using this technology to obtain functional information. We report here a new sampling strategy for 4D micro-CT for functional cardiac and pulmonary imaging. Rapid scanning of free-breathing mice is achieved with fast prospective gating (FPG) implemented on a field programmable gate array. The method entails on-the-fly computation of delays from the R peaks of the ECG signals or the peaks of the respiratory signals for the triggering pulses. Projection images are acquired for all cardiac or respiratory phases at each angle before rotating to the next angle. FPG can deliver the faster scan time of retrospective gating (RG) with the regular angular distribution of conventional prospective gating for cardiac or respiratory gating. Simultaneous cardio-respiratory gating is also possible with FPG in a hybrid retrospective/prospective approach. We have performed phantom experiments to validate the new sampling protocol and compared the results from FPG and RG in cardiac imaging of a mouse. Additionally, we have evaluated the utility of incorporating respiratory information in 4D cardiac micro-CT studies with FPG. A dual-source micro-CT system was used for image acquisition with pulsed x-ray exposures (80 kVp, 100 mA, 10 ms). The cardiac micro-CT protocol involves the use of a liposomal blood pool contrast agent containing 123 mg I ml-1 delivered via a tail vein catheter in a dose of 0.01 ml g-1 body weight. The phantom experiment demonstrates that FPG can distinguish the successive phases of phantom motion with minimal motion blur, and the animal study demonstrates that respiratory FPG can distinguish inspiration and expiration. 4D cardiac micro-CT imaging with FPG provides image quality superior to RG at an isotropic voxel size of 88 µm and 10 ms temporal resolution. The acquisition time for either sampling approach is less than 5 min. The radiation dose associated with the proposed method is in the range of a typical micro-CT dose (256 mGy for the cardiac study). Ignoring respiration does not significantly affect anatomic information in cardiac studies. FPG can deliver short scan times with low-dose 4D micro-CT imaging without sacrificing image quality. FPG can be applied in high-throughput longitudinal studies in a wide range of applications, including drug safety and cardiopulmonary phenotyping.

Chick cerebellar Purkinje cells express omega-conotoxin GVIA-sensitive rather than funnel-web spider toxin-sensitive calcium channels.

PubMed

Angulo, M C; Parra, P; Dieudonné, S

1998-03-01

Voltage-gated calcium channels form a complex family of distinct molecular entities which participate in multiple neuronal functions. In cerebellar Purkinje cells these channels contribute to the characteristic electrophysiological pattern of complex spikes, first described in birds and later in mammals. A specific calcium channel, the P-type channel, has been shown to mediate the majority of the voltage-gated calcium flux in mammalian Purkinje cells. P-type channels play an essential role in synaptic transmission of mammalian cerebellum. It is unclear whether the P-type calcium channel is present in birds. Studies in chick synaptosomal preparations show that the pharmacological profile of calcium channels is complex and suggest a minimal expression of the P-type channel in avian central nervous system. In the present work, we studied voltage-gated calcium channels in dissociated chick cerebellar Purkinje cells to examine the presence of different calcium channel types. Purkinje cells were used because, in mammals, they express predominantly P-type channels and because the morphology of these cells is thought to be phylogenetically conserved. We found that omega-conotoxin GVIA (omega-CgTx GVIA), a specific antagonist of N-type calcium channel, rather than the synthetic funnel-web spider toxin (sFTX), a P-type channel antagonist, blocks the majority of the barium current flowing through calcium channels in chick Purkinje neurons.

Reductions in the variations of respiration signals for respiratory-gated radiotherapy when using the video-coaching respiration guiding system

NASA Astrophysics Data System (ADS)

Lee, Hyun Jeong; Yea, Ji Woon; Oh, Se An

2015-07-01

Respiratory-gated radiation therapy (RGRT) has been used to minimize the dose to normal tissue in lung-cancer radiotherapy. The present research aims to improve the regularity of respiration in RGRT by using a video-coached respiration guiding system. In the study, 16 patients with lung cancer were evaluated. The respiration signals of the patients were measured by using a realtime position management (RPM) respiratory gating system (Varian, USA), and the patients were trained using the video-coaching respiration guiding system. The patients performed free breathing and guided breathing, and the respiratory cycles were acquired for ~5 min. Then, Microsoft Excel 2010 software was used to calculate the mean and the standard deviation for each phase. The standard deviation was computed in order to analyze the improvement in the respiratory regularity with respect to the period and the displacement. The standard deviation of the guided breathing decreased to 48.8% in the inhale peak and 24.2% in the exhale peak compared with the values for the free breathing of patient 6. The standard deviation of the respiratory cycle was found to be decreased when using the respiratory guiding system. The respiratory regularity was significantly improved when using the video-coaching respiration guiding system. Therefore, the system is useful for improving the accuracy and the efficiency of RGRT.

Hysteresis-Free Carbon Nanotube Field-Effect Transistors.

PubMed

Park, Rebecca S; Hills, Gage; Sohn, Joon; Mitra, Subhasish; Shulaker, Max M; Wong, H-S Philip

2017-05-23

While carbon nanotube (CNT) field-effect transistors (CNFETs) promise high-performance and energy-efficient digital systems, large hysteresis degrades these potential CNFET benefits. As hysteresis is caused by traps surrounding the CNTs, previous works have shown that clean interfaces that are free of traps are important to minimize hysteresis. Our previous findings on the sources and physics of hysteresis in CNFETs enabled us to understand the influence of gate dielectric scaling on hysteresis. To begin with, we validate through simulations how scaling the gate dielectric thickness results in greater-than-expected benefits in reducing hysteresis. Leveraging this insight, we experimentally demonstrate reducing hysteresis to <0.5% of the gate-source voltage sweep range using a very large-scale integration compatible and solid-state technology, simply by fabricating CNFETs with a thin effective oxide thickness of 1.6 nm. However, even with negligible hysteresis, large subthreshold swing is still observed in the CNFETs with multiple CNTs per transistor. We show that the cause of large subthreshold swing is due to threshold voltage variation between individual CNTs. We also show that the source of this threshold voltage variation is not explained solely by variations in CNT diameters (as is often ascribed). Rather, other factors unrelated to the CNTs themselves (i.e., process variations, random fixed charges at interfaces) are a significant factor in CNT threshold voltage variations and thus need to be further improved.

Transduction of Voltage and Ca2+ Signals by Slo1 BK Channels

PubMed Central

Hoshi, T.; Pantazis, A.; Olcese, R.

2013-01-01

Large-conductance Ca2+- and voltage-gated K+ channels are activated by an increase in intracellular Ca2+ concentration and/or depolarization. The channel activation mechanism is well described by an allosteric model encompassing the gate, voltage sensors, and Ca2+ sensors, and the model is an excellent framework to understand the influences of auxiliary β and γ subunits and regulatory factors such as Mg2+. Recent advances permit elucidation of structural correlates of the biophysical mechanism. PMID:23636263

Single Event Test Methodologies and System Error Rate Analysis for Triple Modular Redundant Field Programmable Gate Arrays

NASA Technical Reports Server (NTRS)

Allen, Gregory; Edmonds, Larry D.; Swift, Gary; Carmichael, Carl; Tseng, Chen Wei; Heldt, Kevin; Anderson, Scott Arlo; Coe, Michael

2010-01-01

We present a test methodology for estimating system error rates of Field Programmable Gate Arrays (FPGAs) mitigated with Triple Modular Redundancy (TMR). The test methodology is founded in a mathematical model, which is also presented. Accelerator data from 90 nm Xilins Military/Aerospace grade FPGA are shown to fit the model. Fault injection (FI) results are discussed and related to the test data. Design implementation and the corresponding impact of multiple bit upset (MBU) are also discussed.

Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

NASA Astrophysics Data System (ADS)

Morita, Yukinori; Mori, Takahiro; Migita, Shinji; Mizubayashi, Wataru; Tanabe, Akihito; Fukuda, Koichi; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shin-ichi; Liu, Yongxun; Masahara, Meishoku; Ota, Hiroyuki

2014-12-01

The performance of parallel electric field tunnel field-effect transistors (TFETs), in which band-to-band tunneling (BTBT) was initiated in-line to the gate electric field was evaluated. The TFET was fabricated by inserting an epitaxially-grown parallel-plate tunnel capacitor between heavily doped source wells and gate insulators. Analysis using a distributed-element circuit model indicated there should be a limit of the drain current caused by the self-voltage-drop effect in the ultrathin channel layer.

Understanding the mechanism of proteasome 20S core particle gating

PubMed Central

Latham, Michael P.; Sekhar, Ashok; Kay, Lewis E.

2014-01-01

The 20S core particle proteasome is a molecular machine playing an important role in cellular function by degrading protein substrates that no longer are required or that have become damaged. Regulation of proteasome activity occurs, in part, through a gating mechanism controlling the sizes of pores at the top and bottom ends of the symmetric proteasome barrel and restricting access to catalytic sites sequestered in the lumen of the structure. Although atomic resolution models of both open and closed states of the proteasome have been elucidated, the mechanism by which gates exchange between these states remains to be understood. Here, this is investigated by using magnetization transfer NMR spectroscopy focusing on the 20S proteasome core particle from Thermoplasma acidophilum. We show from viscosity-dependent proteasome gating kinetics that frictional forces originating from random solvent motions are critical for driving the gating process. Notably, a small effective hydrodynamic radius (EHR; <4Å) is obtained, providing a picture in which gate exchange proceeds through many steps involving only very small segment sizes. A small EHR further suggests that the kinetics of gate interconversion will not be affected appreciably by large viscogens, such as macromolecules found in the cell, so long as they are inert. Indeed, measurements in cell lysate reveal that the gate interconversion rate decreases only slightly, demonstrating that controlled studies in vitro provide an excellent starting point for understanding regulation of 20S core particle function in complex, biologically relevant environments. PMID:24706783

Gating currents from Kv7 channels carrying neuronal hyperexcitability mutations in the voltage-sensing domain.

PubMed

Miceli, Francesco; Vargas, Ernesto; Bezanilla, Francisco; Taglialatela, Maurizio

2012-03-21

Changes in voltage-dependent gating represent a common pathogenetic mechanism for genetically inherited channelopathies, such as benign familial neonatal seizures or peripheral nerve hyperexcitability caused by mutations in neuronal K(v)7.2 channels. Mutation-induced changes in channel voltage dependence are most often inferred from macroscopic current measurements, a technique unable to provide a detailed assessment of the structural rearrangements underlying channel gating behavior; by contrast, gating currents directly measure voltage-sensor displacement during voltage-dependent gating. In this work, we describe macroscopic and gating current measurements, together with molecular modeling and molecular-dynamics simulations, from channels carrying mutations responsible for benign familial neonatal seizures and/or peripheral nerve hyperexcitability; K(v)7.4 channels, highly related to K(v)7.2 channels both functionally and structurally, were used for these experiments. The data obtained showed that mutations affecting charged residues located in the more distal portion of S(4) decrease the stability of the open state and the active voltage-sensing domain configuration but do not directly participate in voltage sensing, whereas mutations affecting a residue (R4) located more proximally in S(4) caused activation of gating-pore currents at depolarized potentials. These results reveal that distinct molecular mechanisms underlie the altered gating behavior of channels carrying disease-causing mutations at different voltage-sensing domain locations, thereby expanding our current view of the pathogenesis of neuronal hyperexcitability diseases. Copyright © 2012 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Near interface traps in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fiorenza, Patrick; La Magna, Antonino; Vivona, Marilena

This letter reports on the impact of gate oxide trapping states on the conduction mechanisms in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs). The phenomena were studied by gate current transient measurements, performed on n-channel MOSFETs operated in “gate-controlled-diode” configuration. The measurements revealed an anomalous non-steady conduction under negative bias (V{sub G} > |20 V|) through the SiO{sub 2}/4H-SiC interface. The phenomenon was explained by the coexistence of a electron variable range hopping and a hole Fowler-Nordheim (FN) tunnelling. A semi-empirical modified FN model with a time-depended electric field is used to estimate the near interface traps in the gate oxide (N{sub trap} ∼ 2 × 10{supmore » 11} cm{sup −2}).« less

A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors

NASA Astrophysics Data System (ADS)

Lu, Nianduan; Li, Ling; Sun, Pengxiao; Banerjee, Writam; Liu, Ming

2014-09-01

A unified physical model for Seebeck coefficient was presented based on the multiple-trapping and release theory for amorphous oxide semiconductor thin-film transistors. According to the proposed model, the Seebeck coefficient is attributed to the Fermi-Dirac statistics combined with the energy dependent trap density of states and the gate-voltage dependence of the quasi-Fermi level. The simulation results show that the gate voltage, energy disorder, and temperature dependent Seebeck coefficient can be well described. The calculation also shows a good agreement with the experimental data in amorphous In-Ga-Zn-O thin-film transistor.

CMOS minimal array

NASA Astrophysics Data System (ADS)

Janesick, James; Cheng, John; Bishop, Jeanne; Andrews, James T.; Tower, John; Walker, Jeff; Grygon, Mark; Elliot, Tom

2006-08-01

A high performance prototype CMOS imager is introduced. Test data is reviewed for different array formats that utilize 3T photo diode, 5T pinned photo diode and 6T photo gate CMOS pixel architectures. The imager allows several readout modes including progressive scan, snap and windowed operation. The new imager is built on different silicon substrates including very high resistivity epitaxial wafers for deep depletion operation. Data products contained in this paper focus on sensor's read noise, charge capacity, charge transfer efficiency, thermal dark current, RTS dark spikes, QE, pixel cross- talk and on-chip analog circuitry performance.

Prostate Dose Escalation by Innovative Inverse Planning-Driven IMRT

DTIC Science & Technology

2006-11-01

fLJ and at each step, we find the minimizer u,\\ of J’. The Euler-Lagrange equation for the regularized J’ functional is u- div ( 1 Vu )= f E S1,2A...GD, Agazaryan N, Solberg TD . 2003. The effects of tumor motion on planning and delivery of respiratory-gated IMRT. Med Phys 30:1052-1066. Jaffray DA...modulated) radiation therapy: a review. Phys Med Biol 51 :R403-425. Wink NM, McNitt-Gray MF, Solberg TD . 2005. Optimization of multi-slice helical

Measurement and Analysis of a Ferroelectric Field-Effect Transistor NAND Gate

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; MacLeond, Todd C.; Sayyah, Rana; Ho, Fat Duen

2009-01-01

Previous research investigated expanding the use of Ferroelectric Field-Effect Transistors (FFET) to other electronic devices beyond memory circuits. Ferroelectric based transistors possess unique characteris tics that give them interesting and useful properties in digital logic circuits. The NAND gate was chosen for investigation as it is one of the fundamental building blocks of digital electronic circuits. In t his paper, NAND gate circuits were constructed utilizing individual F FETs. N-channel FFETs with positive polarization were used for the standard CMOS NAND gate n-channel transistors and n-channel FFETs with n egative polarization were used for the standard CMOS NAND gate p-chan nel transistors. The voltage transfer curves were obtained for the NA ND gate. Comparisons were made between the actual device data and the previous modeled data. These results are compared to standard MOS logic circuits. The circuits analyzed are not intended to be fully opera tional circuits that would interface with existing logic circuits, bu t as a research tool to look into the possibility of using ferroelectric transistors in future logic circuits. Possible applications for th ese devices are presented, and their potential benefits and drawbacks are discussed.

Comparative sequence analysis suggests a conserved gating mechanism for TRP channels

PubMed Central

Palovcak, Eugene; Delemotte, Lucie; Klein, Michael L.

2015-01-01

The transient receptor potential (TRP) channel superfamily plays a central role in transducing diverse sensory stimuli in eukaryotes. Although dissimilar in sequence and domain organization, all known TRP channels act as polymodal cellular sensors and form tetrameric assemblies similar to those of their distant relatives, the voltage-gated potassium (Kv) channels. Here, we investigated the related questions of whether the allosteric mechanism underlying polymodal gating is common to all TRP channels, and how this mechanism differs from that underpinning Kv channel voltage sensitivity. To provide insight into these questions, we performed comparative sequence analysis on large, comprehensive ensembles of TRP and Kv channel sequences, contextualizing the patterns of conservation and correlation observed in the TRP channel sequences in light of the well-studied Kv channels. We report sequence features that are specific to TRP channels and, based on insight from recent TRPV1 structures, we suggest a model of TRP channel gating that differs substantially from the one mediating voltage sensitivity in Kv channels. The common mechanism underlying polymodal gating involves the displacement of a defect in the H-bond network of S6 that changes the orientation of the pore-lining residues at the hydrophobic gate. PMID:26078053

Probing the Energy Landscape of Activation Gating of the Bacterial Potassium Channel KcsA

PubMed Central

Linder, Tobias; de Groot, Bert L.; Stary-Weinzinger, Anna

2013-01-01

The bacterial potassium channel KcsA, which has been crystallized in several conformations, offers an ideal model to investigate activation gating of ion channels. In this study, essential dynamics simulations are applied to obtain insights into the transition pathways and the energy profile of KcsA pore gating. In agreement with previous hypotheses, our simulations reveal a two phasic activation gating process. In the first phase, local structural rearrangements in TM2 are observed leading to an intermediate channel conformation, followed by large structural rearrangements leading to full opening of KcsA. Conformational changes of a highly conserved phenylalanine, F114, at the bundle crossing region are crucial for the transition from a closed to an intermediate state. 3.9 µs umbrella sampling calculations reveal that there are two well-defined energy barriers dividing closed, intermediate, and open channel states. In agreement with mutational studies, the closed state was found to be energetically more favorable compared to the open state. Further, the simulations provide new insights into the dynamical coupling effects of F103 between the activation gate and the selectivity filter. Investigations on individual subunits support cooperativity of subunits during activation gating. PMID:23658510

Organic/inorganic hybrid synaptic transistors gated by proton conducting methylcellulose films

NASA Astrophysics Data System (ADS)

Wan, Chang Jin; Zhu, Li Qiang; Wan, Xiang; Shi, Yi; Wan, Qing

2016-01-01

The idea of building a brain-inspired cognitive system has been around for several decades. Recently, electric-double-layer transistors gated by ion conducting electrolytes were reported as the promising candidates for synaptic electronics and neuromorphic system. In this letter, indium-zinc-oxide transistors gated by proton conducting methylcellulose electrolyte films were experimentally demonstrated with synaptic plasticity including paired-pulse facilitation and spatiotemporal-correlated dynamic logic. More importantly, a model based on proton-related electric-double-layer modulation and stretched-exponential decay function was proposed, and the theoretical results are in good agreement with the experimentally measured synaptic behaviors.

Organic/inorganic hybrid synaptic transistors gated by proton conducting methylcellulose films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Chang Jin; Wan, Qing, E-mail: wanqing@nju.edu.cn, E-mail: yshi@nju.edu.cn; Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201

The idea of building a brain-inspired cognitive system has been around for several decades. Recently, electric-double-layer transistors gated by ion conducting electrolytes were reported as the promising candidates for synaptic electronics and neuromorphic system. In this letter, indium-zinc-oxide transistors gated by proton conducting methylcellulose electrolyte films were experimentally demonstrated with synaptic plasticity including paired-pulse facilitation and spatiotemporal-correlated dynamic logic. More importantly, a model based on proton-related electric-double-layer modulation and stretched-exponential decay function was proposed, and the theoretical results are in good agreement with the experimentally measured synaptic behaviors.

Adiabatically modeling quantum gates with two-site Heisenberg spins chain: Noise vs interferometry

NASA Astrophysics Data System (ADS)

Jipdi, M. N.; Tchoffo, M.; Fai, L. C.

2018-02-01

We study the Landau Zener (LZ) dynamics of a two-site Heisenberg spin chain assisted with noise and focus on the implementation of logic gates via the resulting quantum interference. We present the evidence of the quantum interference phenomenon in triplet spin states and confirm that, three-level systems mimic Landau-Zener-Stückelberg (LZS) interferometers with occupancies dependent on the effective phase. It emerges that, the critical parameters tailoring the system are obtained for constructive interferences where the two sets of the chain are found to be maximally entangled. Our findings demonstrate that the enhancement of the magnetic field strength suppresses noise effects; consequently, the noise severely impacts the occurrence of quantum interference for weak magnetic fields while for strong fields, quantum interference subsists and allows the modeling of universal sets of quantum gates.

Scheme for Quantum Computing Immune to Decoherence

NASA Technical Reports Server (NTRS)

Williams, Colin; Vatan, Farrokh

2008-01-01

A constructive scheme has been devised to enable mapping of any quantum computation into a spintronic circuit in which the computation is encoded in a basis that is, in principle, immune to quantum decoherence. The scheme is implemented by an algorithm that utilizes multiple physical spins to encode each logical bit in such a way that collective errors affecting all the physical spins do not disturb the logical bit. The scheme is expected to be of use to experimenters working on spintronic implementations of quantum logic. Spintronic computing devices use quantum-mechanical spins (typically, electron spins) to encode logical bits. Bits thus encoded (denoted qubits) are potentially susceptible to errors caused by noise and decoherence. The traditional model of quantum computation is based partly on the assumption that each qubit is implemented by use of a single two-state quantum system, such as an electron or other spin-1.2 particle. It can be surprisingly difficult to achieve certain gate operations . most notably, those of arbitrary 1-qubit gates . in spintronic hardware according to this model. However, ironically, certain 2-qubit interactions (in particular, spin-spin exchange interactions) can be achieved relatively easily in spintronic hardware. Therefore, it would be fortunate if it were possible to implement any 1-qubit gate by use of a spin-spin exchange interaction. While such a direct representation is not possible, it is possible to achieve an arbitrary 1-qubit gate indirectly by means of a sequence of four spin-spin exchange interactions, which could be implemented by use of four exchange gates. Accordingly, the present scheme provides for mapping any 1-qubit gate in the logical basis into an equivalent sequence of at most four spin-spin exchange interactions in the physical (encoded) basis. The complexity of the mathematical derivation of the scheme from basic quantum principles precludes a description within this article; it must suffice to report that the derivation provides explicit constructions for finding the exchange couplings in the physical basis needed to implement any arbitrary 1-qubit gate. These constructions lead to spintronic encodings of quantum logic that are more efficient than those of a previously published scheme that utilizes a universal but fixed set of gates.

NOTE: Fluoroscopic gating without implanted fiducial markers for lung cancer radiotherapy based on support vector machines

NASA Astrophysics Data System (ADS)

Cui, Ying; Dy, Jennifer G.; Alexander, Brian; Jiang, Steve B.

2008-08-01

Various problems with the current state-of-the-art techniques for gated radiotherapy have prevented this new treatment modality from being widely implemented in clinical routine. These problems are caused mainly by applying various external respiratory surrogates. There might be large uncertainties in deriving the tumor position from external respiratory surrogates. While tracking implanted fiducial markers has sufficient accuracy, this procedure may not be widely accepted due to the risk of pneumothorax. Previously, we have developed a technique to generate gating signals from fluoroscopic images without implanted fiducial markers using template matching methods (Berbeco et al 2005 Phys. Med. Biol. 50 4481-90, Cui et al 2007b Phys. Med. Biol. 52 741-55). In this note, our main contribution is to provide a totally different new view of the gating problem by recasting it as a classification problem. Then, we solve this classification problem by a well-studied powerful classification method called a support vector machine (SVM). Note that the goal of an automated gating tool is to decide when to turn the beam ON or OFF. We treat ON and OFF as the two classes in our classification problem. We create our labeled training data during the patient setup session by utilizing the reference gating signal, manually determined by a radiation oncologist. We then pre-process these labeled training images and build our SVM prediction model. During treatment delivery, fluoroscopic images are continuously acquired, pre-processed and sent as an input to the SVM. Finally, our SVM model will output the predicted labels as gating signals. We test the proposed technique on five sequences of fluoroscopic images from five lung cancer patients against the reference gating signal as ground truth. We compare the performance of the SVM to our previous template matching method (Cui et al 2007b Phys. Med. Biol. 52 741-55). We find that the SVM is slightly more accurate on average (1-3%) than the template matching method, when delivering the target dose. And the average duty cycle is 4-6% longer. Given the very limited patient dataset, we cannot conclude that the SVM is more accurate and efficient than the template matching method. However, our preliminary results show that the SVM is a potentially precise and efficient algorithm for generating gating signals for radiotherapy. This work demonstrates that the gating problem can be considered as a classification problem and solved accordingly.

Modeling of static electrical properties in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Xu, Yong; Minari, Takeo; Tsukagoshi, Kazuhito; Gwoziecki, Romain; Coppard, Romain; Benwadih, Mohamed; Chroboczek, Jan; Balestra, Francis; Ghibaudo, Gerard

2011-07-01

A modeling of organic field-effect transistors' (OFETs') electrical characteristics is presented. This model is based on a one-dimensional (1-D) Poisson's equation solution that solves the potential profile in the organic semiconducting film. Most importantly, it demonstrates that, due to the common open-surface configuration used in organic transistors, the conduction occurs in the film volume below threshold. This is because the potential at the free surface is not fixed to zero but rather rises also with the gate bias. The tail of carrier concentration at the free surface is therefore significantly modulated by the gate bias, which partially explains the gate-voltage dependent contact resistance. At the same time in the so-called subthreshold region, we observe a clear charge trapping from the difference between C-V and I-V measurements; hence a traps study by numerical simulation is also performed. By combining the analytical modeling and the traps analysis, the questions on the C-V and I-V characteristics are answered. Finally, the combined results obtained with traps fit well the experimental data in both pentacene and bis(triisopropylsilylethynyl)-pentacene OFETs.

Mechanosensitive Ion Channels in Bacteria: Functional Domains and Mechanisms of Gating

NASA Technical Reports Server (NTRS)

Sukharev, Sergei

2003-01-01

The past funding period was productive for the group. The progress in the mechanosensitive channel field was critically affected in the end of 1998 by the solution of the crystal structure of the mycobacterial homolog of MscL by our colleagues from Caltech. Having the structure of TbMscL in the closed state, we developed a detailed homology model of EcoMscL, and related the structural model with the wealth of functional phenomenology available for the E. coli version of the channel (EcoMscL). The biophysical properties of the open MscL helped to model the open conformation and infer the pathway for the entire gating transition. The following experiments provided strong support to the atomic model of the gating process, and allowed to make further predictions. The work has advanced our understanding of tension-driven conformational transitions in membrane-embedded mechanosensory proteins, determine major energetic contributions and set the stage for further exploration of the whole family of mechanosensitive channels. The results have been published in seven experimental and theoretical papers, with three other papers currently in press or in preparation.

Discriminating evidence accumulation from urgency signals in speeded decision making.

PubMed

Hawkins, Guy E; Wagenmakers, Eric-Jan; Ratcliff, Roger; Brown, Scott D

2015-07-01

The dominant theoretical paradigm in explaining decision making throughout both neuroscience and cognitive science is known as “evidence accumulation”--The core idea being that decisions are reached by a gradual accumulation of noisy information. Although this notion has been supported by hundreds of experiments over decades of study, a recent theory proposes that the fundamental assumption of evidence accumulation requires revision. The "urgency gating" model assumes decisions are made without accumulating evidence, using only moment-by-moment information. Under this assumption, the successful history of evidence accumulation models is explained by asserting that the two models are mathematically identical in standard experimental procedures. We demonstrate that this proof of equivalence is incorrect, and that the models are not identical, even when both models are augmented with realistic extra assumptions. We also demonstrate that the two models can be perfectly distinguished in realistic simulated experimental designs, and in two real data sets; the evidence accumulation model provided the best account for one data set, and the urgency gating model for the other. A positive outcome is that the opposing modeling approaches can be fruitfully investigated without wholesale change to the standard experimental paradigms. We conclude that future research must establish whether the urgency gating model enjoys the same empirical support in the standard experimental paradigms that evidence accumulation models have gathered over decades of study. Copyright © 2015 the American Physiological Society.

Thinking in cycles: MWC is a good model for acetylcholine receptor-channels

PubMed Central

Auerbach, Anthony

2012-01-01

Abstract Neuromuscular acetylcholine receptors have long been a model system for understanding the mechanisms of operation of ligand-gated ion channels and fast chemical synapses. These five subunit membrane proteins have two allosteric (transmitter) binding sites and a distant ion channel domain. Occupation of the binding sites by agonist molecules transiently increases the probability that the channel is ion-permeable. Recent experiments show that the Monod, Wyman and Changeux formalism for allosteric proteins, originally developed for haemoglobin, is an excellent model for acetylcholine receptors. By using mutations and single-channel electrophysiology, the gating equilibrium constants for receptors with zero, one or two bound agonist molecules, and the agonist association and dissociation rate constants from both the closed- and open-channel conformations, have been estimated experimentally. The change in affinity for each transmitter molecule between closed and open conformations provides ∼–5.1 kcal mol−1 towards the global gating isomerization of the protein. PMID:21807612

Gate-bias and temperature dependence of charge transport in dinaphtho[2,3-b:2‧,3‧-d]thiophene thin-film transistors with MoO3/Au electrodes

NASA Astrophysics Data System (ADS)

Shaari, Safizan; Naka, Shigeki; Okada, Hiroyuki

2018-04-01

We investigated the gate-bias and temperature dependence of the voltage-current (V-I) characteristics of dinaphtho[2,3-b:2‧,3‧-d]thiophene with MoO3/Au electrodes. The insertion of the MoO3 layer significantly improved the device performance. The temperature dependent V-I characteristics were evaluated and could be well fitted by the Schottky thermionic emission model with barrier height under forward- and reverse-biased regimes in the ranges of 33-57 and 49-73 meV, respectively. However, at a gate voltage of 0 V, at which a small activation energy was obtained, we needed to consider another conduction mechanism at the grain boundary. From the obtained results, we concluded that two possible conduction mechanisms governed the charge injection at the metal electrode-organic semiconductor interface: the Schottky thermionic emission model and the conduction model in the organic thin-film layer and grain boundary.

Voltage dependence of a stochastic model of activation of an alpha helical S4 sensor in a K channel membrane

NASA Astrophysics Data System (ADS)

Vaccaro, S. R.

2011-09-01

The voltage dependence of the ionic and gating currents of a K channel is dependent on the activation barriers of a voltage sensor with a potential function which may be derived from the principal electrostatic forces on an S4 segment in an inhomogeneous dielectric medium. By variation of the parameters of a voltage-sensing domain model, consistent with x-ray structures and biophysical data, the lowest frequency of the survival probability of each stationary state derived from a solution of the Smoluchowski equation provides a good fit to the voltage dependence of the slowest time constant of the ionic current in a depolarized membrane, and the gating current exhibits a rising phase that precedes an exponential relaxation. For each depolarizing potential, the calculated time dependence of the survival probabilities of the closed states of an alpha helical S4 sensor are in accord with an empirical model of the ionic and gating currents recorded during the activation process.

Dual metal gate tunneling field effect transistors based on MOSFETs: A 2-D analytical approach

NASA Astrophysics Data System (ADS)

Ramezani, Zeinab; Orouji, Ali A.

2018-01-01

A novel 2-D analytical drain current model of novel Dual Metal Gate Tunnel Field Effect Transistors Based on MOSFETs (DMG-TFET) is presented in this paper. The proposed Tunneling FET is extracted from a MOSFET structure by employing an additional electrode in the source region with an appropriate work function to induce holes in the N+ source region and hence makes it as a P+ source region. The electric field is derived which is utilized to extract the expression of the drain current by analytically integrating the band to band tunneling generation rate in the tunneling region based on the potential profile by solving the Poisson's equation. Through this model, the effects of the thin film thickness and gate voltage on the potential, the electric field, and the effects of the thin film thickness on the tunneling current can be studied. To validate our present model we use SILVACO ATLAS device simulator and the analytical results have been compared with it and found a good agreement.

Spinal Cord Stimulation: Clinical Efficacy and Potential Mechanisms.

PubMed

Sdrulla, Andrei D; Guan, Yun; Raja, Srinivasa N

2018-03-11

Spinal cord stimulation (SCS) is a minimally invasive therapy used for the treatment of chronic neuropathic pain. SCS is a safe and effective alternative to medications such as opioids, and multiple randomized controlled studies have demonstrated efficacy for difficult-to-treat neuropathic conditions such as failed back surgery syndrome. Conventional SCS is believed mediate pain relief via activation of dorsal column Aβ fibers, resulting in variable effects on sensory and pain thresholds, and measurable alterations in higher order cortical processing. Although potentiation of inhibition, as suggested by Wall and Melzack's gate control theory, continues to be the leading explanatory model, other segmental and supraspinal mechanisms have been described. Novel, non-standard, stimulation waveforms such as high-frequency and burst have been shown in some studies to be clinically superior to conventional SCS, however their mechanisms of action remain to be determined. Additional studies are needed, both mechanistic and clinical, to better understand optimal stimulation strategies for different neuropathic conditions, improve patient selection and optimize efficacy. © 2018 World Institute of Pain.

The National Council on Crime and Delinquency NewGate Resource Center. Final Report.

ERIC Educational Resources Information Center

Herron, Rex; Muir, John

The origin and development of Project NewGate are described from 1971-74. (The project presents a model program of higher education for incarcerated offenders, consisting of the in-prison phase, transitional phase, and release phase.) Specific project characteristics are discussed and include a 4-year academic program for prison inmates; an…

Coherent Transient Systems Evaluation

DTIC Science & Technology

1993-06-17

europium doped yttrium silicate in collaboration with IBM Almaden Research Center. Research into divalent ion doped crystals as photon gated materials...noise limited model and ignore the non-ideal properties of the medium, nonlinear effects, spatial crosstalk, gating efficiencies, local heating, the...demonstration of the coherent transient continuous optical processor was performed in europium doped yttrium silicate. Though hyperfine split ground

Mutation of I696 and W697 in the TRP box of vanilloid receptor subtype I modulates allosteric channel activation.

PubMed

Gregorio-Teruel, Lucia; Valente, Pierluigi; González-Ros, José Manuel; Fernández-Ballester, Gregorio; Ferrer-Montiel, Antonio

2014-03-01

The transient receptor potential vanilloid receptor subtype I (TRPV1) channel acts as a polymodal sensory receptor gated by chemical and physical stimuli. Like other TRP channels, TRPV1 contains in its C terminus a short, conserved domain called the TRP box, which is necessary for channel gating. Substitution of two TRP box residues-I696 and W697-with Ala markedly affects TRPV1's response to all activating stimuli, which indicates that these two residues play a crucial role in channel gating. We systematically replaced I696 and W697 with 18 native l-amino acids (excluding cysteine) and evaluated the effect on voltage- and capsaicin-dependent gating. Mutation of I696 decreased channel activation by either voltage or capsaicin; furthermore, gating was only observed with substitution of hydrophobic amino acids. Substitution of W697 with any of the 18 amino acids abolished gating in response to depolarization alone, shifting the threshold to unreachable voltages, but not capsaicin-mediated gating. Moreover, vanilloid-activated responses of W697X mutants showed voltage-dependent gating along with a strong voltage-independent component. Analysis of the data using an allosteric model of activation indicates that mutation of I696 and W697 primarily affects the allosteric coupling constants of the ligand and voltage sensors to the channel pore. Together, our findings substantiate the notion that inter- and/or intrasubunit interactions at the level of the TRP box are critical for efficient coupling of stimulus sensing and gate opening. Perturbation of these interactions markedly reduces the efficacy and potency of the activating stimuli. Furthermore, our results identify these interactions as potential sites for pharmacological intervention.

Voltage-Dependent Gating of hERG Potassium Channels

PubMed Central

Cheng, Yen May; Claydon, Tom W.

2012-01-01

The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv) channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4–S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-à-go-go related gene, hERG), which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure–function relationships underlying activation and deactivation gating in Shaker and hERG channels, with a focus on the roles of the voltage-sensing domain and the S4–S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter-charge interactions. More recent data suggest that key amino acid differences in the hERG voltage-sensing unit and S4–S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor. PMID:22586397

Cardiac gating with a pulse oximeter for dual-energy imaging

NASA Astrophysics Data System (ADS)

Shkumat, N. A.; Siewerdsen, J. H.; Dhanantwari, A. C.; Williams, D. B.; Paul, N. S.; Yorkston, J.; Van Metter, R.

2008-11-01

The development and evaluation of a prototype cardiac gating system for double-shot dual-energy (DE) imaging is described. By acquiring both low- and high-kVp images during the resting phase of the cardiac cycle (diastole), heart misalignment between images can be reduced, thereby decreasing the magnitude of cardiac motion artifacts. For this initial implementation, a fingertip pulse oximeter was employed to measure the peripheral pulse waveform ('plethysmogram'), offering potential logistic, cost and workflow advantages compared to an electrocardiogram. A gating method was developed that accommodates temporal delays due to physiological pulse propagation, oximeter waveform processing and the imaging system (software, filter-wheel, anti-scatter Bucky-grid and flat-panel detector). Modeling the diastolic period allowed the calculation of an implemented delay, timp, required to trigger correctly during diastole at any patient heart rate (HR). The model suggests a triggering scheme characterized by two HR regimes, separated by a threshold, HRthresh. For rates at or below HRthresh, sufficient time exists to expose on the same heartbeat as the plethysmogram pulse [timp(HR) = 0]. Above HRthresh, a characteristic timp(HR) delays exposure to the subsequent heartbeat, accounting for all fixed and variable system delays. Performance was evaluated in terms of accuracy and precision of diastole-trigger coincidence and quantitative evaluation of artifact severity in gated and ungated DE images. Initial implementation indicated 85% accuracy in diastole-trigger coincidence. Through the identification of an improved HR estimation method (modified temporal smoothing of the oximeter waveform), trigger accuracy of 100% could be achieved with improved precision. To quantify the effect of the gating system on DE image quality, human observer tests were conducted to measure the magnitude of cardiac artifact under conditions of successful and unsuccessful diastolic gating. Six observers independently measured the artifact in 111 patient DE images. The data indicate that successful diastolic gating results in a statistically significant reduction (p < 0.001) in the magnitude of cardiac motion artifact, with residual artifact attributed primarily to gross patient motion.

Differential effect of brief electrical stimulation on voltage-gated potassium channels.

PubMed

Cameron, Morven A; Al Abed, Amr; Buskila, Yossi; Dokos, Socrates; Lovell, Nigel H; Morley, John W

2017-05-01

Electrical stimulation of neuronal tissue is a promising strategy to treat a variety of neurological disorders. The mechanism of neuronal activation by external electrical stimulation is governed by voltage-gated ion channels. This stimulus, typically brief in nature, leads to membrane potential depolarization, which increases ion flow across the membrane by increasing the open probability of these voltage-gated channels. In spiking neurons, it is activation of voltage-gated sodium channels (Na V channels) that leads to action potential generation. However, several other types of voltage-gated channels are expressed that also respond to electrical stimulation. In this study, we examine the response of voltage-gated potassium channels (K V channels) to brief electrical stimulation by whole cell patch-clamp electrophysiology and computational modeling. We show that nonspiking amacrine neurons of the retina exhibit a large variety of responses to stimulation, driven by different K V -channel subtypes. Computational modeling reveals substantial differences in the response of specific K V -channel subtypes that is dependent on channel kinetics. This suggests that the expression levels of different K V -channel subtypes in retinal neurons are a crucial predictor of the response that can be obtained. These data expand our knowledge of the mechanisms of neuronal activation and suggest that K V -channel expression is an important determinant of the sensitivity of neurons to electrical stimulation. NEW & NOTEWORTHY This paper describes the response of various voltage-gated potassium channels (K V channels) to brief electrical stimulation, such as is applied during prosthetic electrical stimulation. We show that the pattern of response greatly varies between K V channel subtypes depending on activation and inactivation kinetics of each channel. Our data suggest that problems encountered when artificially stimulating neurons such as cessation in firing at high frequencies, or "fading," may be attributed to K V -channel activation. Copyright © 2017 the American Physiological Society.

An information-theoretic approach to motor action decoding with a reconfigurable parallel architecture.

PubMed

Craciun, Stefan; Brockmeier, Austin J; George, Alan D; Lam, Herman; Príncipe, José C

2011-01-01

Methods for decoding movements from neural spike counts using adaptive filters often rely on minimizing the mean-squared error. However, for non-Gaussian distribution of errors, this approach is not optimal for performance. Therefore, rather than using probabilistic modeling, we propose an alternate non-parametric approach. In order to extract more structure from the input signal (neuronal spike counts) we propose using minimum error entropy (MEE), an information-theoretic approach that minimizes the error entropy as part of an iterative cost function. However, the disadvantage of using MEE as the cost function for adaptive filters is the increase in computational complexity. In this paper we present a comparison between the decoding performance of the analytic Wiener filter and a linear filter trained with MEE, which is then mapped to a parallel architecture in reconfigurable hardware tailored to the computational needs of the MEE filter. We observe considerable speedup from the hardware design. The adaptation of filter weights for the multiple-input, multiple-output linear filters, necessary in motor decoding, is a highly parallelizable algorithm. It can be decomposed into many independent computational blocks with a parallel architecture readily mapped to a field-programmable gate array (FPGA) and scales to large numbers of neurons. By pipelining and parallelizing independent computations in the algorithm, the proposed parallel architecture has sublinear increases in execution time with respect to both window size and filter order.

Dynamics of the active site architecture in plant-type ferredoxin-NADP(+) reductases catalytic complexes.

PubMed

Sánchez-Azqueta, Ana; Catalano-Dupuy, Daniela L; López-Rivero, Arleth; Tondo, María Laura; Orellano, Elena G; Ceccarelli, Eduardo A; Medina, Milagros

2014-10-01

Kinetic isotope effects in reactions involving hydride transfer and their temperature dependence are powerful tools to explore dynamics of enzyme catalytic sites. In plant-type ferredoxin-NADP(+) reductases the FAD cofactor exchanges a hydride with the NADP(H) coenzyme. Rates for these processes are considerably faster for the plastidic members (FNR) of the family than for those belonging to the bacterial class (FPR). Hydride transfer (HT) and deuteride transfer (DT) rates for the NADP(+) coenzyme reduction of four plant-type FNRs (two representatives of the plastidic type FNRs and the other two from the bacterial class), and their temperature dependences are here examined applying a full tunnelling model with coupled environmental fluctuations. Parameters for the two plastidic FNRs confirm a tunnelling reaction with active dynamics contributions, but isotope effects on Arrhenius factors indicate a larger contribution for donor-acceptor distance (DAD) dynamics in the Pisum sativum FNR reaction than in the Anabaena FNR reaction. On the other hand, parameters for bacterial FPRs are consistent with passive environmental reorganisation movements dominating the HT coordinate and no contribution of DAD sampling or gating fluctuations. This indicates that active sites of FPRs are more organised and rigid than those of FNRs. These differences must be due to adaptation of the active sites and catalytic mechanisms to fulfil their particular metabolic roles, establishing a compromise between protein flexibility and functional optimisation. Analysis of site-directed mutants in plastidic enzymes additionally indicates the requirement of a minimal optimal architecture in the catalytic complex to provide a favourable gating contribution. Copyright © 2014 Elsevier B.V. All rights reserved.

Efficient simulation of voxelized phantom in GATE with embedded SimSET multiple photon history generator.

PubMed

Lin, Hsin-Hon; Chuang, Keh-Shih; Lin, Yi-Hsing; Ni, Yu-Ching; Wu, Jay; Jan, Meei-Ling

2014-10-21

GEANT4 Application for Tomographic Emission (GATE) is a powerful Monte Carlo simulator that combines the advantages of the general-purpose GEANT4 simulation code and the specific software tool implementations dedicated to emission tomography. However, the detailed physical modelling of GEANT4 is highly computationally demanding, especially when tracking particles through voxelized phantoms. To circumvent the relatively slow simulation of voxelized phantoms in GATE, another efficient Monte Carlo code can be used to simulate photon interactions and transport inside a voxelized phantom. The simulation system for emission tomography (SimSET), a dedicated Monte Carlo code for PET/SPECT systems, is well-known for its efficiency in simulation of voxel-based objects. An efficient Monte Carlo workflow integrating GATE and SimSET for simulating pinhole SPECT has been proposed to improve voxelized phantom simulation. Although the workflow achieves a desirable increase in speed, it sacrifices the ability to simulate decaying radioactive sources such as non-pure positron emitters or multiple emission isotopes with complex decay schemes and lacks the modelling of time-dependent processes due to the inherent limitations of the SimSET photon history generator (PHG). Moreover, a large volume of disk storage is needed to store the huge temporal photon history file produced by SimSET that must be transported to GATE. In this work, we developed a multiple photon emission history generator (MPHG) based on SimSET/PHG to support a majority of the medically important positron emitters. We incorporated the new generator codes inside GATE to improve the simulation efficiency of voxelized phantoms in GATE, while eliminating the need for the temporal photon history file. The validation of this new code based on a MicroPET R4 system was conducted for (124)I and (18)F with mouse-like and rat-like phantoms. Comparison of GATE/MPHG with GATE/GEANT4 indicated there is a slight difference in energy spectra for energy below 50 keV due to the lack of x-ray simulation from (124)I decay in the new code. The spatial resolution, scatter fraction and count rate performance are in good agreement between the two codes. For the case studies of (18)F-NaF ((124)I-IAZG) using MOBY phantom with 1  ×  1 × 1 mm(3) voxel sizes, the results show that GATE/MPHG can achieve acceleration factors of approximately 3.1 × (4.5 ×), 6.5 × (10.7 ×) and 9.5 × (31.0 ×) compared with GATE using the regular navigation method, the compressed voxel method and the parameterized tracking technique, respectively. In conclusion, the implementation of MPHG in GATE allows for improved efficiency of voxelized phantom simulations and is suitable for studying clinical and preclinical imaging.

Flexible Graphene Transistor Architecture for Optical Sensor Technology

NASA Astrophysics Data System (ADS)

Ordonez, Richard Christopher

The unique electrical and optoelectronic properties of graphene allow tunable conductivity and broadband electromagnetic absorption that spans the ultraviolet and infrared regimes. However, in the current state-of-art graphene sensor architectures, junction resistance and doping concentration are predominant factors that affect signal strength and sensitivity. Unfortunately, graphene produces high contact resistances with standard electrode materials ( few kilo-ohms), therefore, signal is weak and large carrier concentrations are required to probe sensitivity. Moreover, the atomic thickness of graphene enables the potential for flexible electronics, but there has not been a successful graphene sensor architecture that demonstrates stable operation on flexible substrates and with minimal fabrication cost. In this study, the author explores a novel 3-terminal transistor architecture that integrates twodimensional graphene, liquid metal, and electrolytic gate dielectrics (LM-GFETs: Liquid Metal and Graphene Field-Effect Transistors ). The goal is to deliver a sensitive, flexible, and lightweight transistor architecture that will improve sensor technology and maneuverability. The reported high thermal conductivity of graphene provides potential for room-temperature thermal management without the need of thermal-electric and gas cooling systems that are standard in sensor platforms. Liquid metals provide a unique opportunity for conformal electrodes that maximize surface area contact, therefore, enable flexibility, lower contact resistance, and reduce damage to the graphene materials involved. Lastly, electrolytic gate dielectrics provide conformability and high capacitances needed for high on/off rations and electrostatic gating. Results demonstrated that with minimal fabrication steps the proposed flexible graphene transistor architecture demonstrated ambipolar current-voltage transfer characteristics that are comparable to the current state-of-the-art. An additional investigation demonstrated PN junction operation and the successful integration of the proposed architecture into an optoelectronic application with the use of semiconductor quantum dots in contact with the graphene material that acted as optical absorbers to increase detector gain. Applications that can benefit from such technology advancement include Nano-satellites (Nanosat), Underwater autonomous vehicles (UAV), and airborne platforms in which flexibility and sensitivity are critical parameters that must be optimized to increase mission duration and range.