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Sample records for mm-thick cdte detectors

  1. Alpha particle energy response of 1-mm-thick polycarbonate track detectors by 50 Hz-HV electrochemical etching method.

    PubMed

    Sohrabi, M; Ramezani, V

    2015-04-01

    The electrochemical etching (ECE) method enlarges charged particle tracks to enhance its applications in particular in health physics and radiation dosimetry. The ECE method is usually based on using a high frequency-high voltage (HF-HV) generator with 250-µm-thick polycarbonate track detectors (PCTDs). The authors' recent studies on nitrogen and helium ions and alpha tracks in 1-mm-thick large-size PCTDs under a 50 Hz-HV ECE process provided promising results. In this study, alpha track efficiency and mean track diameter versus energy responses and registration energy range as well as alpha and background track shapes under three sets of 50 Hz-4, 5 and 6 kV applied field conditions have been studied and are reported. The efficiency versus alpha energy has a Bragg-type response from ∼15 keV to ∼4.5 MeV for the field conditions applied with an efficiency value of 40-50% at the Bragg peak. The results are presented and discussed.

  2. High-contrast X-ray radiography using hybrid semiconductor pixel detectors with 1 mm thick Si sensor as a tool for monitoring liquids in natural building stones

    NASA Astrophysics Data System (ADS)

    Krejci, F.; Slavikova, M.; Zemlicka, J.; Jakubek, J.; Kotlik, P.

    2014-07-01

    For the preservation of buildings and other cultural heritage, the application of various conservation products such as consolidants or water repellents is often used. X-ray radiography utilizing semiconductor particle-counting detectors stands out as a promising tool in research of consolidants inside natural building stones. However, a clear visualization of consolidation products is often accomplished by doping with a contrast agent, which presents a limitation. This approach causes a higher attenuation for X-rays, but also alters the penetration ability of the original consolidation product. In this contribution, we focus on the application of Medipix type detectors newly equipped with a 1 mm thick Si sensor. This thicker sensor has enhanced detection efficiency leading to extraordinary sensitivity for monitoring consolidants and liquids in natural building stones even without any contrast agent. Consequently, methods for the direct monitoring of organosilicon consolidants and dynamic visualization of the water uptake in the Opuka stone using high-contrast X-ray radiography are demonstrated. The presented work demonstrates a significant improvement in the monitoring sensitivity of X-ray radiography in stone consolidation studies and also shows advantages of this detector configuration for X-ray radiography in general.

  3. Energy and coincidence time resolution measurements of CdTe detectors for PET.

    PubMed

    Ariño, G; Chmeissani, M; De Lorenzo, G; Puigdengoles, C; Cabruja, E; Calderón, Y; Kolstein, M; Macias-Montero, J G; Martinez, R; Mikhaylova, E; Uzun, D

    2013-02-01

    We report on the characterization of 2 mm thick CdTe diode detector with Schottky contacts to be employed in a novel conceptual design of PET scanner. Results at -8°C with an applied bias voltage of -1000 V/mm show a 1.2% FWHM energy resolution at 511 keV. Coincidence time resolution has been measured by triggering on the preamplifier output signal to improve the timing resolution of the detector. Results at the same bias and temperature conditions show a FWHM of 6 ns with a minimum acceptance energy of 500 keV. These results show that pixelated CdTe Schottky diode is an excellent candidate for the development of next generation nuclear medical imaging devices such as PET, Compton gamma cameras, and especially PET-MRI hybrid systems when used in a magnetic field immune configuration.

  4. Evaluation of Compton gamma camera prototype based on pixelated CdTe detectors.

    PubMed

    Calderón, Y; Chmeissani, M; Kolstein, M; De Lorenzo, G

    2014-06-01

    A proposed Compton camera prototype based on pixelated CdTe is simulated and evaluated in order to establish its feasibility and expected performance in real laboratory tests. The system is based on module units containing a 2×4 array of square CdTe detectors of 10×10 mm(2) area and 2 mm thickness. The detectors are pixelated and stacked forming a 3D detector with voxel sizes of 2 × 1 × 2 mm(3). The camera performance is simulated with Geant4-based Architecture for Medicine-Oriented Simulations(GAMOS) and the Origin Ensemble(OE) algorithm is used for the image reconstruction. The simulation shows that the camera can operate with up to 10(4) Bq source activities with equal efficiency and is completely saturated at 10(9) Bq. The efficiency of the system is evaluated using a simulated (18)F point source phantom in the center of the Field-of-View (FOV) achieving an intrinsic efficiency of 0.4 counts per second per kilobecquerel. The spatial resolution measured from the point spread function (PSF) shows a FWHM of 1.5 mm along the direction perpendicular to the scatterer, making it possible to distinguish two points at 3 mm separation with a peak-to-valley ratio of 8.

  5. CdTe focal plane detector for hard x-ray focusing optics

    NASA Astrophysics Data System (ADS)

    Seller, Paul; Wilson, Matthew D.; Veale, Matthew C.; Schneider, Andreas; Gaskin, Jessica; Wilson-Hodge, Colleen; Christe, Steven; Shih, Albert Y.; Gregory, Kyle; Inglis, Andrew; Panessa, Marco

    2015-08-01

    The demand for higher resolution x-ray optics (a few arcseconds or better) in the areas of astrophysics and solar science has, in turn, driven the development of complementary detectors. These detectors should have fine pixels, necessary to appropriately oversample the optics at a given focal length, and an energy response also matched to that of the optics. Rutherford Appleton Laboratory have developed a 3-side buttable, 20 mm x 20 mm CdTe-based detector with 250 μm square pixels (80x80 pixels) which achieves 1 keV FWHM @ 60 keV and gives full spectroscopy between 5 keV and 200 keV. An added advantage of these detectors is that they have a full-frame readout rate of 10 kHz. Working with NASA Goddard Space Flight Center and Marshall Space Flight Center, 4 of these 1mm-thick CdTe detectors are tiled into a 2x2 array for use at the focal plane of a balloon-borne hard-x-ray telescope, and a similar configuration could be suitable for astrophysics and solar space-based missions. This effort encompasses the fabrication and testing of flightsuitable front-end electronics and calibration of the assembled detector arrays. We explain the operation of the pixelated ASIC readout and measurements, front-end electronics development, preliminary X-ray imaging and spectral performance, and plans for full calibration of the detector assemblies. Work done in conjunction with the NASA Centers is funded through the NASA Science Mission Directorate Astrophysics Research and Analysis Program.

  6. Characterization of M-π-n CdTe pixel detectors coupled to HEXITEC readout chip

    NASA Astrophysics Data System (ADS)

    Veale, M. C.; Kalliopuska, J.; Pohjonen, H.; Andersson, H.; Nenonen, S.; Seller, P.; Wilson, M. D.

    2012-01-01

    Segmentation of the anode-side of an M-π-n CdTe diode, where the pn-junction is diffused into the detector bulk, produces large improvements in the spatial and energy resolution of CdTe pixel detectors. It has been shown that this fabrication technique produces very high inter-pixel resistance and low leakage currents are obtained by physical isolation of the pixels of M-π-n CdTe detectors. In this paper the results from M-π-n CdTe detectors stud bonded to a spectroscopic readout ASIC are reported. The CdTe pixel detectors have 250 μm pitch and an area of 5 × 5 mm2 with thicknesses of 1 and 2 mm. The polarization and energy resolution dependence of the M-π-n CdTe detectors as a function of detector thickness are discussed.

  7. Development of mammography system using CdTe photon counting detector for the exposure dose reduction

    NASA Astrophysics Data System (ADS)

    Maruyama, Sho; Niwa, Naoko; Yamazaki, Misaki; Yamakawa, Tsutomu; Nagano, Tatsuya; Kodera, Yoshie

    2014-03-01

    We propose a new mammography system using a cadmium telluride (CdTe) photon-counting detector for exposure dose reduction. In contrast to conventional mammography, this system uses high-energy X-rays. This study evaluates the usefulness of this system in terms of the absorbed dose distribution and contrast-to-noise ratio (CNR) at acrylic step using a Monte Carlo simulation. In addition, we created a prototype system that uses a CdTe detector and automatic movement stage. For various conditions, we measured the properties and evaluated the quality of images produced by the system. The simulation result for a tube voltage of 40 kV and tungsten/barium (W/Ba) as a target/filter shows that the surface dose was reduced more than 60% compared to that under conventional conditions. The CNR of our proposal system also became higher than that under conventional conditions. The point at which the CNRs coincide for 4 cm polymethyl methacrylate (PMMA) at the 2-mm-thick step corresponds to a dose reduction of 30%, and these differences increased with increasing phantom thickness. To improve the image quality, we determined the problematic aspects of the scanning system. The results of this study indicate that, by using a higher X-ray energy than in conventional mammography, it is possible to obtain a significant exposure dose reduction without loss of image quality. Further, the image quality of the prototype system can be improved by optimizing the balance between the shift-and-add operation and the output of the X-ray tube. In future work, we will further examine these improvement points.

  8. The polarization mechanism in CdTe Schottky detectors

    SciTech Connect

    Cola, Adriano; Farella, Isabella

    2009-03-09

    Schottky CdTe nuclear detectors are affected by bias-induced polarization phenomena when operating at room temperature. A space charge buildup occurs at the blocking contact causing the degradation in detection performance. By means of Pockels effect, we study the electric field distribution inside the detector and its variation with time and temperature. The analysis of the space charge has allowed us to point out the role of the Schottky contact and of carrier detrapping from deep levels in the polarization mechanism. Moreover, measured current transients have been quantitatively accounted for by the increase in the electric field at the blocking junction.

  9. Characterization of polarization phenomenon in Al-Schottky CdTe detectors using a spectroscopic analysis method

    NASA Astrophysics Data System (ADS)

    Meuris, Aline; Limousin, Olivier; Blondel, Claire

    2011-10-01

    CdTe radiation detectors equipped with Schottky contacts are known to show spectral response degradation over time under biasing. Nevertheless, they can be used as high-resolution spectrometers for X-rays and gamma-rays with moderate cooling and high voltage. Spectroscopic long-term measurements have been performed with Al/CdTe/Pt pixel detectors of 0.5, 1 and 2 mm thicknesses and 241Am source from -13 to +16 °C to evaluate how long they can be operated. Experimental results are confronted to simulations using the charge accumulation model for electric field. Activation energy for collection efficiency stability and peak shift was measured at 1.0-1.2 eV although deep acceptor levels responsible for hole detrapping during polarization were evaluated by other methods at EV +0.6-0.8 eV. The difference is probably due to a thermal effect of pre-polarization before biasing the detector.

  10. Photon counting X-ray imaging with CdTe pixel detectors based on XPAD2 circuit

    NASA Astrophysics Data System (ADS)

    Franchi, Romain; Glasser, Francis; Gasse, Adrien; Clemens, Jean-Claude

    2006-07-01

    A semiconductor hybrid pixel detector for photon counting X-ray imaging has been developed and tested under radiation. The sensor is based on recent uniform CdTe single crystal associated with XPAD 2 counting chip via innovative processes of interconnection. The building detector is 1 mm thick, with an area of 1 cm 2 and consists of 600 square pixels cells 330 μm side. The readout chip working in electron collection mode is capable of setting homogeneous threshold with only a dispersion of 730 e -. Maximum noise level has been evaluated around 15 keV. First experiments under X-rays demonstrate a very good efficiency of detection. Moreover, imaging system allows excellent linearity over a large-scale achieving count rate of 3×10 6 photons/s/mm 2. Spectrometric measurements point up the system potential in multi-energies applications by locating and resolving X-rays lines of 241Am and 57Co sources.

  11. Synchrotron x-ray photoconductor detector arrays made on MBE grown CdTe

    SciTech Connect

    Yoo, S.S.; Montano, P.A. |; Rodricks, B.; Sivananthan, S.; Faurie, J.P.

    1996-08-01

    We have been fabricating x-ray photoconductor linear array detectors using molecular beam epitaxially (MBE) grown (111)B undoped CdTe layers on (100) Si substrates. A novel technique was developed to remove the Si and to mount the fragile MBE grown CdTe layers onto insulating ceramic substrates. 256 channel linear photoconductor array devices were fabricated on the resulting CdTe layers. The resistivity of MBE (111)B CdTe was high (> 10{sup 8} {Omega}cm) enough to utilize the material for low energy (8 to 25 keV) x-ray detectors. The stability of the detectors are satisfactory, and they were tested at room temperature routinely for over a year. The performance of the photoconductor was greatly improved when the detector was cooled to 230K. Due to its reduced dark current at low temperatures, the dynamic range of the detector response increased to nearly four decades at 230K. 29 refs., 8 figs.

  12. Simulation of active-edge pixelated CdTe radiation detectors

    NASA Astrophysics Data System (ADS)

    Duarte, D. D.; Lipp, J. D.; Schneider, A.; Seller, P.; Veale, M. C.; Wilson, M. D.; Baker, M. A.; Sellin, P. J.

    2016-01-01

    The edge surfaces of single crystal CdTe play an important role in the electronic properties and performance of this material as an X-ray and γ-ray radiation detector. Edge effects have previously been reported to reduce the spectroscopic performance of the edge pixels in pixelated CdTe radiation detectors without guard bands. A novel Technology Computer Aided Design (TCAD) model based on experimental data has been developed to investigate these effects. The results presented in this paper show how localized low resistivity surfaces modify the internal electric field of CdTe creating potential wells. These result in a reduction of charge collection efficiency of the edge pixels, which compares well with experimental data.

  13. Characterization of a 2-mm thick, 16x16 Cadmium-Zinc-Telluride Pixel Array

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Richardson, Georgia; Mitchell, Shannon; Ramsey, Brian; Seller, Paul; Sharma, Dharma

    2003-01-01

    The detector under study is a 2-mm-thick, 16x16 Cadmium-Zinc-Telluride pixel array with a pixel pitch of 300 microns and inter-pixel gap of 50 microns. This detector is a precursor to that which will be used at the focal plane of the High Energy Replicated Optics (HERO) telescope currently being developed at Marshall Space Flight Center. With a telescope focal length of 6 meters, the detector needs to have a spatial resolution of around 200 microns in order to take full advantage of the HERO angular resolution. We discuss to what degree charge sharing will degrade energy resolution but will improve our spatial resolution through position interpolation. In addition, we discuss electric field modeling for this specific detector geometry and the role this mapping will play in terms of charge sharing and charge loss in the detector.

  14. CdTe X-ray detectors under strong optical irradiation

    SciTech Connect

    Cola, Adriano; Farella, Isabella

    2014-11-17

    The perturbation behaviour of Ohmic and Schottky CdTe detectors under strong optical pulses is investigated. To this scope, the electric field profiles and the induced charge transients are measured, thus simultaneously addressing fixed and free charges properties, interrelated by one-carrier trapping. The results elucidate the different roles of the contacts and deep levels, both under dark and strong irradiation conditions, and pave the way for the improvement of detector performance control under high X-ray fluxes.

  15. CdTe detector efficiency calibration using thick targets of pure and stable compounds

    NASA Astrophysics Data System (ADS)

    Chaves, P. C.; Taborda, A.; Reis, M. A.

    2012-02-01

    Quantitative PIXE measurements require perfectly calibrated set-ups. Cooled CdTe detectors have good efficiency for energies above those covered by Si(Li) detectors and turn on the possibility of studying K X-rays lines instead of L X-rays lines for medium and eventually heavy elements, which is an important advantage in various cases, if only limited resolution systems are available in the low energy range. In this work we present and discuss spectra from a CdTe semiconductor detector covering the energy region from Cu (K α1 = 8.047 keV) to U (K α1 = 98.439 keV). Pure thick samples were irradiated with proton beams at the ITN 3.0 MV Tandetron accelerator in the High Resolution High Energy PIXE set-up. Results and the application to the study of a Portuguese Ossa Morena region Dark Stone sample are presented in this work.

  16. Growth and fabrication method of CdTe and its performance as a radiation detector

    NASA Astrophysics Data System (ADS)

    Choi, Hyojeong; Jeong, Manhee; Kim, Han Soo; Kim, Young Soo; Ha, Jang Ho; Chai, Jong-Seo

    2015-01-01

    A CdTe crystal ingot doped with 2000 ppm of Cl was grown by using the low-pressure Bridgman (LPB) method at the Korea Atomic Energy Research Institute (KAERI). A Semiconductor detector as a radiation detection sensor with a size of 7 (W) × 6.5 (D) × 2 (H) mm3 was fabricated from the CdTe ingot. In addition, the properties of the CdTe sample were observed through four kinds of experiments to analyze its performance. The resistivity was obtained as 1.41 × 1010 Ωcm by using a Keithley 6517A high-precision electrometer. The mobility-lifetime products for electrons and holes were 3.137 × 10-4 cm2/V and 4.868 × 10-5 cm2/V, respectively. Finally, we achieved a 16.8% energy resolution at 59.5 keV for the 241Am gamma-ray source. The CdTe semiconductor detector grown at KAERI has a performance good enough to detect low-energy gamma-rays.

  17. Evaluation of XRI-UNO CdTe detector for nuclear medical imaging

    NASA Astrophysics Data System (ADS)

    Jambi, L. K.; Lees, J. E.; Bugby, S. L.; Tipper, S.; Alqahtani, M. S.; Perkins, A. C.

    2015-06-01

    Over the last two decades advances in semiconductor detector technology have reached the point where they are sufficiently sensitive to become an alternative to scintillators for high energy gamma ray detection for application in fields such as medical imaging. This paper assessed the Cadmium-Telluride (CdTe) XRI-UNO semiconductor detector produced by X-RAY Imatek for photon energies of interest in nuclear imaging. The XRI-UNO detector was found to have an intrinsic spatial resolution of <0.5mm and a high incident count rate capability up to at least 1680cps. The system spatial resolution, uniformity and sensitivity characteristics are also reported.

  18. Super-resolution x-ray imaging by CdTe discrete detector arrays

    NASA Astrophysics Data System (ADS)

    Aoki, T.; Ishida, Y.; Morii, H.; Tomita, Y.; Ohashi, G.; Temmyo, J.; Hatanaka, Y.

    2005-08-01

    512-pixel CdTe super-liner imaging scanner was developed. This device was consist with 512 chips of M-π-n CdTe diode detector fabricated by excimer laser doping process, 8 chips of photon-counting mode 64ch ASIC with FPGA circuit, USB2.0 interface with 1-CPU. It has 5 discriminated levels and over 2Mcps count rate for X-ray penetration imaging. This imaging scanner has 512 discrete CdTe chips for detector arrays with the length of 2.0mm, width of 0.8mm and thickness of 0.5mm. These chips were mounted in four plover array rows for high-resolution imaging with 0.5mm-pitch, therefore the pixel pitch was over the pixel width. When images were taken with scanning system with this arrays, we could obtain over-resolution than pixel width. In this paper, this "over-resolution" imaging will be called "super resolution imaging". In high-resolution imaging device, the pixel devices on one substrate were formed by integrated process, or many discrete detector chips were installed on circuit board, usually. In the latter case, it is easer to make each detector chips than former case, and it are no need to consider charge sharing phenomena compare with one-chip pixel devices. However, a decrease in pixel pitch makes the mount to the detector chip to the ASIC board difficult because the handling will also be difficult The super-resolution technique in this scanner by pixel-shift method for X-ray imaging is shown in this paper

  19. Study of the effect of the stress on CdTe nuclear detectors

    SciTech Connect

    Ayoub, M.; Radley, I.; Mullins, J. T.; Hage-Ali, M.

    2013-09-14

    CdTe detectors are commonly used for X and γ ray applications. The performance of these detectors is strongly affected by different types of mechanical stress; such as that caused by differential expansion between the semiconductor and its intimate metallic contacts and that caused by applied pressure during the bonding process. The aim of this work was to study the effects of stress on the performance of CdTe detectors. A difference in expansion coefficients induces transverse stress under the metallic contact, while contact pressure induces longitudinal stress. These stresses have been simulated by applying known static pressures. For the longitudinal case, the pressure was applied directly to the metallic contact; while in the transverse case, it was applied to the side. We have studied the effect of longitudinal and transverse stresses on the electrical characteristics including leakage current measurements and γ-ray detection performance. We have also investigated induced defects, their nature, activation energies, cross sections, and concentrations under the applied stress by using photo-induced current transient spectroscopy and thermoelectric effect spectroscopy techniques. The operational stress limit is also given.

  20. A pixellated γ-camera based on CdTe detectors clinical interests and performances

    NASA Astrophysics Data System (ADS)

    Chambron, J.; Arntz, Y.; Eclancher, B.; Scheiber, Ch; Siffert, P.; Hage Hali, M.; Regal, R.; Kazandjian, A.; Prat, V.; Thomas, S.; Warren, S.; Matz, R.; Jahnke, A.; Karman, M.; Pszota, A.; Nemeth, L.

    2000-07-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cm×15 cm detection matrix of 2304 CdTe detector elements, 2.83 mm×2.83 mm×2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the γ-camera performances. But their use as γ detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed of 256 detectors shared in 16 modules. Each module consists in a thin ceramic plate holding a line of 16 detectors, in four groups of four for an easy replacement, and holding a special 16 channels integrated circuit designed by CLRC (UK). A detection and acquisition logic based on a DSP card and a PC has been programmed by Eurorad for spectral and counting acquisition modes. Collimators LEAP and LEHR from commercial design, mobile gantry and clinical software were provided by Siemens (Germany). The γ-camera head housing, its general mounting and the electric connections were performed by Phase Laboratory (CNRS, France). The compactness of the γ-camera head, thin detectors matrix, electronic readout and collimator, facilitates the detection of close γ sources with the advantage of a high spatial resolution. Such an equipment is intended to bedside explorations. There is a growing clinical requirement in nuclear cardiology to early assess the extent of an

  1. CdTe Focal Plane Detector for Hard X-Ray Focusing Optics

    NASA Technical Reports Server (NTRS)

    Seller, Paul; Wilson, Matthew D.; Veale, Matthew C.; Schneider, Andreas; Gaskin, Jessica; Wilson-Hodge, Colleen; Christe, Steven; Shih, Albert Y.; Inglis, Andrew; Panessa, Marco

    2015-01-01

    The demand for higher resolution x-ray optics (a few arcseconds or better) in the areas of astrophysics and solar science has, in turn, driven the development of complementary detectors. These detectors should have fine pixels, necessary to appropriately oversample the optics at a given focal length, and an energy response also matched to that of the optics. Rutherford Appleton Laboratory have developed a 3-side buttable, 20 millimeter x 20 millimeter CdTe-based detector with 250 micrometer square pixels (80 x 80 pixels) which achieves 1 kiloelectronvolt FWHM (Full-Width Half-Maximum) @ 60 kiloelectronvolts and gives full spectroscopy between 5 kiloelectronvolts and 200 kiloelectronvolts. An added advantage of these detectors is that they have a full-frame readout rate of 10 kilohertz. Working with NASA Goddard Space Flight Center and Marshall Space Flight Center, 4 of these 1 millimeter-thick CdTe detectors are tiled into a 2 x 2 array for use at the focal plane of a balloon-borne hard-x-ray telescope, and a similar configuration could be suitable for astrophysics and solar space-based missions. This effort encompasses the fabrication and testing of flight-suitable front-end electronics and calibration of the assembled detector arrays. We explain the operation of the pixelated ASIC readout and measurements, front-end electronics development, preliminary X-ray imaging and spectral performance, and plans for full calibration of the detector assemblies. Work done in conjunction with the NASA Centers is funded through the NASA Science Mission Directorate Astrophysics Research and Analysis Program.

  2. Modeling and simulation of Positron Emission Mammography (PEM) based on double-sided CdTe strip detectors

    NASA Astrophysics Data System (ADS)

    Ozsahin, I.; Unlu, M. Z.

    2014-03-01

    Breast cancer is the most common leading cause of cancer death among women. Positron Emission Tomography (PET) Mammography, also known as Positron Emission Mammography (PEM), is a method for imaging primary breast cancer. Over the past few years, PEMs based on scintillation crystals dramatically increased their importance in diagnosis and treatment of early stage breast cancer. However, these detectors have significant limitations like poor energy resolution resulting with false-negative result (missed cancer), and false-positive result which leads to suspecting cancer and suggests an unnecessary biopsy. In this work, a PEM scanner based on CdTe strip detectors is simulated via the Monte Carlo method and evaluated in terms of its spatial resolution, sensitivity, and image quality. The spatial resolution is found to be ~ 1 mm in all three directions. The results also show that CdTe strip detectors based PEM scanner can produce high resolution images for early diagnosis of breast cancer.

  3. Imaging of Ra-223 with a small-pixel CdTe detector

    NASA Astrophysics Data System (ADS)

    Scuffham, J. W.; Pani, S.; Seller, P.; Sellin, P. J.; Veale, M. C.; Wilson, M. D.; Cernik, R. J.

    2015-01-01

    Ra-223 Dichloride (Xofigo™) is a promising new radiopharmaceutical offering survival benefit and palliation of painful bone metastases in patients with hormone-refractory prostate cancer [1]. The response to radionuclide therapy and toxicity are directly linked to the absorbed radiation doses to the tumour and organs at risk respectively. Accurate dosimetry necessitates quantitative imaging of the biodistribution and kinetics of the radiopharmaceutical. Although primarily an alpha-emitter, Ra-223 also has some low-abundance X-ray and gamma emissions, which enable imaging of the biodistribution in the patient. However, the low spectral resolution of conventional gamma camera detectors makes in-vivo imaging of Ra-223 challenging. In this work, we present spectra and image data of anthropomorphic phantoms containing Ra-223 acquired with a small-pixel CdTe detector (HEXITEC) [2] with a pinhole collimator. Comparison is made with similar data acquired using a clinical gamma camera. The results demonstrate the advantages of the solid state detector in terms of scatter rejection and quantitative accuracy of the images. However, optimised collimation is needed in order for the sensitivity to rival current clinical systems. As different dosage levels and administration regimens for this drug are explored in current clinical trials, there is a clear need to develop improved imaging technologies that will enable personalised treatments to be designed for patients.

  4. A 10 cm × 10 cm CdTe Spectroscopic Imaging Detector based on the HEXITEC ASIC

    NASA Astrophysics Data System (ADS)

    Wilson, M. D.; Dummott, L.; Duarte, D. D.; Green, F. H.; Pani, S.; Schneider, A.; Scuffham, J. W.; Seller, P.; Veale, M. C.

    2015-10-01

    The 250 μ m pitch 80x80 pixel HEXITEC detector systems have shown that spectroscopic imaging with an energy resolution of <1 keV FWHM per pixel can be readily achieved in the range of 5-200 keV with Al-pixel CdTe biased to -500 V. This level of spectroscopic imaging has a variety of applications but the ability to produce large area detectors remains a barrier to the adoption of this technology. The limited size of ASICs and defect free CdTe wafers dictates that building large area monolithic detectors is not presently a viable option. A 3-side buttable detector module has been developed to cover large areas with arrays of smaller detectors. The detector modules are 20.35 × 20.45 mm with CdTe bump bonded to the HEXITEC ASIC with coverage up to the edge of the module on three sides. The fourth side has a space of 3 mm to allow I/O wire bonds to be made between the ASIC and the edge of a PCB that routes the signals to a connector underneath the active area of the module. The detector modules have been assembled in rows of five modules with a dead space of 170 μ m between each module. Five rows of modules have been assembled in a staggered height array where the wire bonds of one row of modules are covered by the active detector area of a neighboring row. A data acquisition system has been developed to digitise, store and output the 24 Gbit/s data that is generated by the array. The maximum bias magnitude that could be applied to the CdTe detectors from the common voltage source was limited by the worst performing detector module. In this array of detectors a bias of -400 V was used and the detector modules had 93 % of pixels with better than 1.2 keV FWHM at 59.5 keV. An example of K-edge enhanced imaging for mammography was demonstrated. Subtracting images from the events directly above and below the K-edge of the Iodine contrast agent was able to extract the Iodine information from the image of a breast phantom and improve the contrast of the images. This is just

  5. Possible use of CdTe detectors in kVp monitoring of diagnostic x-ray tubes

    PubMed Central

    Krmar, M.; Bucalović, N.; Baucal, M.; Jovančević, N.

    2010-01-01

    It has been suggested that kVp of diagnostic X-ray devices (or maximal energy of x-ray photon spectra) should be monitored routinely; however a standardized noninvasive technique has yet to be developed and proposed. It is well known that the integral number of Compton scattered photons and the intensities of fluorescent x-ray lines registered after irradiation of some material by an x-ray beam are a function of the maximal beam energy. CdTe detectors have sufficient energy resolution to distinguish individual x-ray fluorescence lines and high efficiency for the photon energies in the diagnostic region. Our initial measurements have demonstrated that the different ratios of the integral number of Compton scattered photons and intensities of K and L fluorescent lines detected by CdTe detector are sensitive function of maximal photon energy and could be successfully applied for kVp monitoring. PMID:21037976

  6. Development of a CdTe pixel detector with a window comparator ASIC for high energy X-ray applications

    NASA Astrophysics Data System (ADS)

    Hirono, T.; Toyokawa, H.; Furukawa, Y.; Honma, T.; Ikeda, H.; Kawase, M.; Koganezawa, T.; Ohata, T.; Sato, M.; Sato, G.; Takagaki, M.; Takahashi, T.; Watanabe, S.

    2011-09-01

    We have developed a photon-counting-type CdTe pixel detector (SP8-01). SP8-01 was designed as a prototype of a high-energy X-ray imaging detector for experiments using synchrotron radiation. SP8-01 has a CdTe sensor of 500 μm thickness, which has an absorption efficiency of almost 100% up to 50 keV and 45% even at 100 keV. A full-custom application specific integrated circuit (ASIC) was designed as a readout circuit of SP8-01, which is equipped with a window-type discriminator. The upper discriminator realizes a low-background measurement, because X-ray beams from the monochromator contain higher-order components beside the fundamental X-rays in general. ASIC chips were fabricated with a TSMC 0.25 μm CMOS process, and CdTe sensors were bump-bonded to the ASIC chips by a gold-stud bonding technique. Beam tests were performed at SPring-8. SP8-01 detected X-rays up to 120 keV. The capability of SP8-01 as an imaging detector for high-energy X-ray synchrotron radiation was evaluated with its performance characteristics.

  7. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    PubMed Central

    Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro

    2009-01-01

    Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors. PMID:22412323

  8. A CdTe position sensitive detector for a hard X- and gamma-ray wide field camera

    SciTech Connect

    Caroli, E.; Cesare, G. de; Donati, A.; Dusi, W.; Landini, G.; Stephen, J.B.; Perotti, F.

    1998-12-31

    An important region of the electromagnetic spectrum for astrophysics is the hard X- and gamma ray band between 10 keV and a few MeV, where several processes occur in a wide variety of objects and with different spatial distribution and time scales. In order to fulfill the observational requirements in this energy range and taking into account the opportunities given by small/medium size missions (e.g., on the ISS), the authors have proposed a compact, wide field camera based on a thick (1 cm) position sensitive CdTe detector (PSD). The detector is made of an array of 128x96 CdTe microspectrometers with a pixel size of 2x2 mm{sup 2}. The basic element of the PSD is the linear module that is an independent detection unit with 32 CdTe crystals and monolithic front-electronics (ASIC) supported by a thin (300 {micro}m) ceramic layer. The expected performance of the PSD over the operative energy range and some of the required ASIC functionality are presented and discussed.

  9. Estimation of mammary gland composition using CdTe series detector developed for photon-counting mammography

    NASA Astrophysics Data System (ADS)

    Ihori, Akiko; Okamoto, Chizuru; Yamakawa, Tsutomu; Yamamoto, Shuichiro; Okada, Masahiro; Nakajima, Ai; Kato, Misa; Kodera, Yoshie

    2016-03-01

    Energy resolved photon-counting mammography is a new technology, which counts the number of photons that passes through an object, and presents it as a pixel value in an image of the object. Silicon semiconductor detectors are currently used in commercial mammography. However, the disadvantage of silicon is the low absorption efficiency for high X-ray energies. A cadmium telluride (CdTe) series detector has a high absorption efficiency over a wide energy range. In this study, we proposed a method to estimate the composition of the mammary gland using a CdTe series detector as a photon-counting detector. The fact that the detection rate of breast cancer in mammography is affected by mammary gland composition is now widely accepted. Assessment of composition of the mammary gland has important implications. An important advantage of our proposed technique is its ability to discriminate photons using three energy bins. We designed the CdTe series detector system using the MATLAB simulation software. The phantom contains nine regions with the ratio of glandular tissue and adipose varying in increments of 10%. The attenuation coefficient for each bin's energy was calculated from the number of input and output photons possessed by each. The evaluation results obtained by plotting the attenuation coefficient μ in a three-dimensional (3D) scatter plot show that the plots had a regular composition order congruent with that of the mammary gland. Consequently, we believe that our proposed method can be used to estimate the composition of the mammary gland.

  10. Discrimination between normal breast tissue and tumor tissue using CdTe series detector developed for photon-counting mammography

    NASA Astrophysics Data System (ADS)

    Okamoto, Chizuru; Ihori, Akiko; Yamakawa, Tsutomu; Yamamoto, Shuichiro; Okada, Masahiro; Kato, Misa; Nakajima, Ai; Kodera, Yoshie

    2016-03-01

    We propose a new mammography system using a cadmium telluride (CdTe) series photon-counting detector, having high absorption efficiency over a wide energy range. In a previous study, we showed that the use of high X-ray energy in digital mammography is useful from the viewpoint of exposure dose and image quality. In addition, the CdTe series detector can acquire X-ray spectrum information following transmission through a subject. This study focused on the tissue composition identified using spectral information obtained by a new photon-counting detector. Normal breast tissue consists entirely of adipose and glandular tissues. However, it is very difficult to find tumor tissue in the region of glandular tissue via a conventional mammogram, especially in dense breast because the attenuation coefficients of glandular tissue and tumor tissue are very close. As a fundamental examination, we considered a simulation phantom and showed the difference between normal breast tissue and tumor tissue of various thicknesses in a three-dimensional (3D) scatter plot. We were able to discriminate between both types of tissues. In addition, there was a tendency for the distribution to depend on the thickness of the tumor tissue. Thinner tumor tissues were shown to be closer in appearance to normal breast tissue. This study also demonstrated that the difference between these tissues could be made obvious by using a CdTe series detector. We believe that this differentiation is important, and therefore, expect this technology to be applied to new tumor detection systems in the future.

  11. Design of a high-resolution small-animal SPECT-CT system sharing a CdTe semiconductor detector

    NASA Astrophysics Data System (ADS)

    Ryu, Hyun-Ju; Lee, Young-Jin; Lee, Seung-Wan; Cho, Hyo-Min; Choi, Yu-Na; Kim, Hee-Joung

    2012-07-01

    A single photon emission computed tomography (SPECT) system with a co-registered X-y computed tomography (CT) system allows the convergence of functional information and morphologic information. The localization of radiopharmaceuticals on a SPECT can be enhanced by combining the SPECT with an anatomical modality, such as X-ray CT. Gamma-ray imaging for nuclear medicine devices and X-ray imaging systems for diagnostics has recently been developed based on semiconductor detectors, and semiconductor detector materials such as cadmium telluride (CdTe) or cadmium zinc telluride (CZT) are available for both X-ray and gamma-ray systems for small-animal imaging. CdTe or CZT detectors provide strong absorption and high detection efficiency of high energy X-ray and gamma-ray photons because of their large atomic numbers. In this study, a pinhole collimator SPECT system sharing a cadmium telluride (CdTe) detector with a CT was designed. The GEANT4 application for tomographic emission (GATE) v.6.1 was used for the simulation. The pinhole collimator was designed to obtain a high spatial resolution of the SPECT system. The acquisition time for each projection was 40 seconds, and 60 projections were obtained for tomographic image acquisition. The reconstruction was performed using ordered subset expectation maximization (OS-EM) algorithms. The sensitivity and the spatial resolution were measured on the GATE simulation to evaluate the system characteristics. The spatial resolution of the system calculated from the FWHM of Gaussian fitted PSF curve was 0.69 mm, and the sensitivity of the system was measured to be 0.354 cps/kBq by using a Tc-99m point source of 1 MBq for 800 seconds. A phantom study was performed to verify the design of the dual imaging modality system. The system will be built as designed, and it can be applied as a pre-clinical imaging system.

  12. A study on friction stir welding of 12mm thick aluminum alloy plates

    NASA Astrophysics Data System (ADS)

    Kumar, Deepati Anil; Biswas, Pankaj; Tikader, Sujoy; Mahapatra, M. M.; Mandal, N. R.

    2013-12-01

    Most of the investigations regarding friction stir welding (FSW) of aluminum alloy plates have been limited to about 5 to 6 mm thick plates. In prior work conducted the various aspects concerning the process parameters and the FSW tool geometry were studied utilizing friction stir welding of 12 mm thick commercial grade aluminum alloy. Two different simple-to-manufacture tool geometries were used. The effect of varying welding parameters and dwell time of FSW tool on mechanical properties and weld quality was examined. It was observed that in order to achieve a defect free welding on such thick aluminum alloy plates, tool having trapezoidal pin geometry was suitable. Adequate tensile strength and ductility can be achieved utilizing a combination of high tool rotational speed of about 2000 r/min and low speed of welding around 28 mm/min. At very low and high dwell time the ductility of welded joints are reduced significantly.

  13. Fiber Lasers Application for Welding of Titanium Alloys With 16 mm Thickness

    NASA Astrophysics Data System (ADS)

    Evtihiev, N. N.; Grezev, N. V.; Markushov, Y. V.; Murzakov, M. A.

    2016-09-01

    This article illustrates the use of fiber laser welding of a titanium alloy with 16 mm thickness. The basic advantages of the laser welding process over the traditional methods of arc welding of titanium are demonstrated. Destructive testing of welds was performed to confirm the quality of the welding. The results of the static tensile tests, static bending and toughness at room temperature are presented. All tests confirmed the high quality of the welded joint.

  14. Thin-film CdTe detector for microdosimetric study of radiation dose enhancement at gold-tissue interface.

    PubMed

    Paudel, Nava Raj; Shvydka, Diana; Parsai, E Ishmael

    2016-01-01

    Presence of interfaces between high and low atomic number (Z) materials, often encountered in diagnostic imaging and radiation therapy, leads to radiation dose perturbation. It is characterized by a very narrow region of sharp dose enhancement at the interface. A rapid falloff of dose enhancement over a very short distance from the interface makes the experimental dosimetry nontrivial. We use an in-house-built inexpensive thin-film Cadmium Telluride (CdTe) photodetector to study this effect at the gold-tissue interface and verify our experimental results with Monte Carlo (MC) modeling. Three-micron thick thin-film CdTe photodetectors were fabricated in our lab. One-, ten- or one hundred-micron thick gold foils placed in a tissue-equivalent-phantom were irradiated with a clinical Ir-192 high-dose-rate (HDR) source and current measured with a CdTe detector in each case was compared with the current measured for all uniform tissue-equivalent phantom. Percentage signal enhancement (PSE) due to each gold foil was then compared against MC modeled percentage dose enhancement (PDE), obtained from the geometry mimicking the experimental setup. The experimental PSEs due to 1, 10, and 100 μm thick gold foils at the closest measured distance of 12.5μm from the interface were 42.6 ± 10.8 , 137.0 ± 11.9, and 203.0 ± 15.4, respectively. The corresponding MC modeled PDEs were 38.1 ± 1, 164 ± 1, and 249 ± 1, respectively. The experimental and MC modeled values showed a closer agreement at the larger distances from the interface. The dose enhancement in the vicinity of gold-tissue interface was successfully measured using an in-house-built, high-resolution CdTe-based photodetector and validated with MC simulations. A close agreement between experimental and the MC modeled results shows that CdTe detector can be utilized for mapping interface dose distribution encountered in the application of ionizing radiation. PMID:27685139

  15. Comparing performances of a CdTe X-ray spectroscopic detector and an X-ray dual-energy sandwich detector

    NASA Astrophysics Data System (ADS)

    Gorecki, A.; Brambilla, A.; Moulin, V.; Gaborieau, E.; Radisson, P.; Verger, L.

    2013-11-01

    Multi-energy (ME) detectors are becoming a serious alternative to classical dual-energy sandwich (DE-S) detectors for X-ray applications such as medical imaging or explosive detection. They can use the full X-ray spectrum of irradiated materials, rather than disposing only of low and high energy measurements, which may be mixed. In this article, we intend to compare both simulated and real industrial detection systems, operating at a high count rate, independently of the dimensions of the measurements and independently of any signal processing methods. Simulations or prototypes of similar detectors have already been compared (see [1] for instance), but never independently of estimation methods and never with real detectors. We have simulated both an ME detector made of CdTe - based on the characteristics of the MultiX ME100 and - a DE-S detector - based on the characteristics of the Detection Technology's X-Card 1.5-64DE model. These detectors were compared to a perfect spectroscopic detector and an optimal DE-S detector. For comparison purposes, two approaches were investigated. The first approach addresses how to distinguise signals, while the second relates to identifying materials. Performance criteria were defined and comparisons were made over a range of material thicknesses and with different photon statistics. Experimental measurements in a specific configuration were acquired to checks simulations. Results showed good agreement between the ME simulation and the ME100 detector. Both criteria seem to be equivalent, and the ME detector performs 3.5 times better than the DE-S detector with same photon statistics based on simulations and experimental measurements. Regardless of the photon statistics ME detectors appeared more efficient than DE-S detectors for all material thicknesses between 1 and 9 cm when measuring plastics with an attenuation signature close that of explosive materials. This translates into an improved false detection rate (FDR): DE

  16. Fine-pitch CdTe detector for hard X-ray imaging and spectroscopy of the Sun with the FOXSI rocket experiment

    NASA Astrophysics Data System (ADS)

    Ishikawa, Shin-nosuke; Katsuragawa, Miho; Watanabe, Shin; Uchida, Yuusuke; Takeda, Shin'ichiro; Takahashi, Tadayuki; Saito, Shinya; Glesener, Lindsay; Buitrago-Casas, Juan Camilo; Krucker, Säm.; Christe, Steven

    2016-07-01

    We have developed a fine-pitch hard X-ray (HXR) detector using a cadmium telluride (CdTe) semiconductor for imaging and spectroscopy for the second launch of the Focusing Optics Solar X-ray Imager (FOXSI). FOXSI is a rocket experiment to perform high sensitivity HXR observations from 4 to 15 keV using the new technique of HXR focusing optics. The focal plane detector requires <100μm position resolution (to take advantage of the angular resolution of the optics) and ≈1 keV energy resolution (full width at half maximum (FWHM)) for spectroscopy down to 4 keV, with moderate cooling (>-30°C). Double-sided silicon strip detectors were used for the first FOXSI flight in 2012 to meet these criteria. To improve the detectors' efficiency (66% at 15 keV for the silicon detectors) and position resolution of 75 μm for the second launch, we fabricated double-sided CdTe strip detectors with a position resolution of 60 μm and almost 100% efficiency for the FOXSI energy range. The sensitive area is 7.67 mm × 7.67 mm, corresponding to the field of view of 791'' × 791''. An energy resolution of 1 keV (FWHM) and low-energy threshold of ≈4 keV were achieved in laboratory calibrations. The second launch of FOXSI was performed on 11 December 2014, and images from the Sun were successfully obtained with the CdTe detector. Therefore, we successfully demonstrated the detector concept and the usefulness of this technique for future HXR observations of the Sun.

  17. Digital performance improvements of a CdTe pixel detector for high flux energy-resolved X-ray imaging

    NASA Astrophysics Data System (ADS)

    Abbene, L.; Gerardi, G.; Principato, F.

    2015-03-01

    Photon counting detectors with energy resolving capabilities are desired for high flux X-ray imaging. In this work, we present the performance of a pixelated Schottky Al/p-CdTe/Pt detector (4×4) coupled to a custom-designed digital readout electronics for high flux measurements. The detector (4×4×2 mm3) has an anode layout based on an array of 16 pixels with a geometric pitch of 1 mm (pixel size of 0.6 mm). The 4-channel readout electronics is able to continuously digitize and process the signals from each pixel, performing multi-parameter analysis (event arrival time, pulse shape, pulse height, pulse time width, etc.) even at high fluxes and at different throughput and energy resolution conditions. The spectroscopic response of the system to monochromatic X-ray sources, at both low and high rates, is presented with particular attention to the mitigation of some typical spectral distortions (pile-up, baseline shifts and charge sharing). At a photon counting rate of 520 kcps/pixel, the system exhibits an energy resolution (FWHM at 59.5 keV) of 4.6%, 7.1% and 9% at throughputs of 0.9%, 16% and 82%, respectively. Measurements of Ag-target X-ray spectra also show the ability of the system to perform accurate estimation of the input counting rate up to 1.1 Mcps/pixel. The aim of this work is to point out, beside the appealing properties of CdTe detectors, the benefits of the digital approach in the development of high-performance energy resolved photon counting (ERPC) systems for high flux X-ray imaging.

  18. A 2D 4×4 Channel Readout ASIC for Pixelated CdTe Detectors for Medical Imaging Applications

    PubMed Central

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Martínez, Ricardo; Puigdengoles, Carles

    2015-01-01

    We present a 16-channel readout integrated circuit (ROIC) with nanosecond-resolution time to digital converter (TDC) for pixelated Cadmium Telluride (CdTe) gamma-ray detectors. The 4 × 4 pixel array ROIC is the proof of concept of the 10 × 10 pixel array readout ASIC for positron-emission tomography (PET) scanner, positron-emission mammography (PEM) scanner, and Compton gamma camera. The electronics of each individual pixel integrates an analog front-end with switchable gain, an analog to digital converter (ADC), configuration registers, and a 4-state digital controller. For every detected photon, the pixel electronics provides the energy deposited in the detector with 10-bit resolution, and a fast trigger signal for time stamp. The ASIC contains the 16-pixel matrix electronics, a digital controller, five global voltage references, a TDC, a temperature sensor, and a band-gap based current reference. The ASIC has been fabricated with TSMC 0.25 μm mixed-signal CMOS technology and occupies an area of 5.3 mm × 6.8 mm. The TDC shows a resolution of 95.5 ps, a precision of 600 ps at full width half maximum (FWHM), and a power consumption of 130 μW. In acquisition mode, the total power consumption of every pixel is 200 μW. An equivalent noise charge (ENC) of 160 e−RMS at maximum gain and negative polarity conditions has been measured at room temperature. PMID:26744545

  19. Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

    NASA Astrophysics Data System (ADS)

    Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

    2015-06-01

    We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

  20. Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

    PubMed Central

    Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

    2014-01-01

    We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

  1. Simulation of the Expected Performance of a Seamless Scanner for Brain PET Based on Highly Pixelated CdTe Detectors

    PubMed Central

    Mikhaylova, Ekaterina; De Lorenzo, Gianluca; Chmeissani, Mokhtar; Kolstein, Machiel; Cañadas, Mario; Arce, Pedro; Calderón, Yonatan; Uzun, Dilber; Ariño, Gerard; Macias-Montero, José Gabriel; Martinez, Ricardo; Puigdengoles, Carles; Cabruja, Enric

    2014-01-01

    The aim of this work is the evaluation of the design for a nonconventional PET scanner, the voxel imaging PET (VIP), based on pixelated room-temperature CdTe detectors yielding a true 3-D impact point with a density of 450 channels cm3, for a total 6 336 000 channels in a seamless ring shaped volume. The system is simulated and evaluated following the prescriptions of the NEMA NU 2-2001 and the NEMA NU 4-2008 standards. Results show that the excellent energy resolution of the CdTe detectors (1.6% for 511 keV photons), together with the small voxel pitch (1×1×2 mm3), and the crack-free ring geometry, give the design the potential to overcome the current limitations of PET scanners and to approach the intrinsic image resolution limits set by physics. The VIP is expected to reach a competitive sensitivity and a superior signal purity with respect to values commonly quoted for state-of-the-art scintillating crystal PETs. The system can provide 14 cps/kBq with a scatter fraction of 3.95% and 21 cps/kBq with a scatter fraction of 0.73% according to NEMA NU 2-2001 and NEMA NU 4-2008, respectively. The calculated NEC curve has a peak value of 122 kcps at 5.3 kBq/mL for NEMA NU 2-2001 and 908 kcps at 1.6 MBq/mL for NEMA NU 4-2008. The proposed scanner can achieve an image resolution of ~ 1 mm full-width at half-maximum in all directions. The virtually noise-free data sample leads to direct positive impact on the quality of the reconstructed images. As a consequence, high-quality high-resolution images can be obtained with significantly lower number of events compared to conventional scanners. Overall, simulation results suggest the VIP scanner can be operated either at normal dose for fast scanning and high patient throughput, or at low dose to decrease the patient radioactivity exposure. The design evaluation presented in this work is driving the development and the optimization of a fully operative prototype to prove the feasibility of the VIP concept. PMID:24108750

  2. High-rate x-ray spectroscopy in mammography with a CdTe detector: A digital pulse processing approach

    SciTech Connect

    Abbene, L.; Gerardi, G.; Principato, F.; Del Sordo, S.; Ienzi, R.; Raso, G.

    2010-12-15

    Purpose:Direct measurement of mammographic x-ray spectra under clinical conditions is a difficult task due to the high fluence rate of the x-ray beams as well as the limits in the development of high resolution detection systems in a high counting rate environment. In this work we present a detection system, based on a CdTe detector and an innovative digital pulse processing (DPP) system, for high-rate x-ray spectroscopy in mammography. Methods: The DPP system performs a digital pile-up inspection and a digital pulse height analysis of the detector signals, digitized through a 14-bit, 100 MHz digitizer, for x-ray spectroscopy even at high photon counting rates. We investigated on the response of the digital detection system both at low (150 cps) and at high photon counting rates (up to 500 kcps) by using monoenergetic x-ray sources and a nonclinical molybdenum anode x-ray tube. Clinical molybdenum x-ray spectrum measurements were also performed by using a pinhole collimator and a custom alignment device. Results: The detection system shows excellent performance up to 512 kcps with an energy resolution of 4.08% FWHM at 22.1 keV. Despite the high photon counting rate (up to 453 kcps), the molybdenum x-ray spectra, measured under clinical conditions, are characterized by a low number of pile-up events. The agreement between the attenuation curves and the half value layer values, obtained from the measured spectra, simulated spectra, and from the exposure values directly measured with an ionization chamber, also shows the accuracy of the measurements. Conclusions: These results make the proposed detection system a very attractive tool for both laboratory research and advanced quality controls in mammography.

  3. Research on uncooled CdTe gamma detectors as substitutes for ultrapure Ge. Final report 1 Aug 77-31 Jan 80

    SciTech Connect

    Lis, S.A.; Serreze, H.B.; Rusinek, H.; Reich, T.; Youdin, M.

    1980-06-01

    The physics and chemistry of cadmium telluride (CdTe) crystal growth and detector structures were investigated to provide the technological basis for reproducible fabrication of these devices. These gamma ray detectors can provide a unique combination of energy resolution, sensitivity, compactness, and economy (all with room temperature operation)--factors of prime importance for modern nuclear instrumentation. Topics investigated include the THM crystal growth process, mechanisms of metal-semiconductor and metal-electrolyte-semiconductor contact behavior, polarization phenomena, and advanced PIN device structures. Detectors developed under this program were examined for potential use in cerebral blood flow monitors. They were found to possess a number of features which make them appear attractive as substitutes for cryogenically cooled high purity germanium detectors.

  4. The use of Schottky CdTe detectors for high-energy astronomy: application to the detection plane of the instrument SVOM/ECLAIRs

    NASA Astrophysics Data System (ADS)

    Nasser, G.; Godet, O.; Atteia, J.-L.; Amoros, C.; Barret, D.; Bordon, S.; Cordier, B.; Gevin, O.; Gonzalez, F.; Houret, B.; Lacombe, K.; Mandrou, P.; Marty, W.; Mercier, K.; Pons, R.; Rambaud, D.; Ramon, P.; Rouaix, G.; Waegebaert, V.

    2014-07-01

    Ohmic CdZnTe and CdTe detectors have been successfully used in high-energy missions such as IBIS on-board INTEGRAL and the Swift-BAT in the past two decades. Such detectors provide very good quantum efficiency in the hard X-ray band. For the future generation of hard X-ray coded mask detectors, a higher sensitivity will be required. A way to achieve this is to increase the effective area of the pixilated detection plane, to change the mask pattern and/or the properties of the semi-conductors paving the detection plane. For the future Chinese-French Gamma-ray burst mission SVOM, the GRB trigger camera ECLAIRs will make use of a new type of high-energy detectors, the Schottky CdTe detectors. Such detectors, when reversely biased, are known to present very low leakage current, resulting in lower values of the low-energy threshold (down to 4 keV or less) than for previous missions (i.e. > 10 keV for the Swift-BAT and INTEGRAL/IBIS). Such low values will enable ECLAIRs with a moderate geometrical area of 1024 cm2 and a low-energy threshold of 4 keV to be more sensitive to high-redshift GRBs (emitting mainly in X-rays) than the Swift-BAT with a higher effective area and low-energy threshold. However, the spectral performance of such detectors are known to degrade over time, once polarized, due to the polarization effect that strongly depends on the temperature and the bias voltage applied to the detectors. In this paper, we present an intensive study of the properties of Schottky CdTe detectors as used on SVOM/ECLAIRs such as I-V characteristics, polarization effect, activation energy and low temperature annealing effects. We discuss the implications of these measurements on the use of this type of detectors in future high-energy instruments.

  5. Fast photoconductor CdTe detectors for synchrotron x-ray studies

    SciTech Connect

    Yoo, Sung Shik; Faurie, J.P.; Wang, Kemei; Montano, P.A. |; Huang Qiang; Rodricks, B.

    1993-09-01

    The Advanced Photon Source will be that brightest source of synchrotron x-rays when it becomes operational in 1996. During normal operation, the ring will be filled with 20 bunches of positrons with an interbunch spacing of 177 ns and a bunch width of 119 ps. To perform experiments with x-rays generated by positrons on these time scales one needs extremely high speed detectors. To achieve the necessary high speed, we are developing MBE-grown CdTe-base photoconductive position sensitive array detectors. The arrays fabricated have 64 pixels with a gap of 100 {mu}m between pixels. The high speed response of the devices was tested using a short pulse laser. X-ray static measurements were performed using an x-ray tube and synchrotron radiation to study the device`s response to flux and wavelength changes. This paper presents the response of the devices to some of these tests and discusses different physics aspects to be considered when designing high speed detectors.

  6. Dynamic X-ray direct conversion detector using a CdTe polycrystalline layer coupled to a CMOS readout chip

    NASA Astrophysics Data System (ADS)

    Arques, Marc; Renet, Sébastien; Brambilla, Andréa; Feuillet, Guy; Gasse, Adrien; Billon-Pierron, Nicolas; Jolliot, Muriel; Mathieu, Lydie; Rohr, Pierre

    2011-05-01

    A direct detection X-ray imager is presented. It uses polycrystalline cadmium telluride (CdTe) grown by close space sublimation technique for the X-ray photoconductor. A 15 mm×15 mm CdTe layer is connected to a 200×200 pixel readout CMOS by indium bumping. X-ray performance at 16 frames/s rate is measured. In particular a readout noise of 0.5 X-ray, an MTF of 50% at 4 lp/mm and a DQE of 20% at 4 lp/mm are obtained.

  7. Red meat and fruit intake is prognostic among patients with localized cutaneous melanomas more than 1 mm thick

    PubMed Central

    Gould Rothberg, Bonnie E.; Bulloch, Kaleigh J.; Fine, Judith A.; Barnhill, Raymond L.; Berwick, Marianne

    2014-01-01

    Background As the 10-year mortality for localized cutaneous melanoma more than 1.00 mm thick approaches 40% following complete resection, non-therapeutic interventions that can supplement recommended active surveillance are needed. Although guidelines recommending nutrition, physical activity and tobacco cessation for cancer survivors have been published, data describing their associations with melanoma survivorship are lacking. Methods Analysis of modifiable lifestyle behaviors collected on the 249 cases with melanomas more than 1.00 mm thick enrolled in the Connecticut Case-Control Study of Skin Self-Examination study was conducted. Independent associations with melanoma-specific survival were evaluated through Cox proportional hazards modeling adjusting for age, gender, Breslow thickness, ulceration and the presence of microsatellites. Independently significant variables were then combined into a single model and backwards elimination was employed until all remaining variables were significant at p<0.05. Results Following adjustment for age, Breslow thickness and anatomic site of the index melanoma, daily fruit consumption was associated with improved melanoma-specific survival (HR=0.54; 95% CI: 0.34–0.86) whereas at least weekly red meat consumption was associated with worse outcomes (HR=1.84; 95% CI: 1.02–3.30). Natural red (HR=0.44; 95% CI: 0.22–0.88) or blond (HR=0.52; 95% CI: 0.29–0.94) hair were also favorably prognostic. Higher fish consumption was of borderline significance for improved survival only when considered independently (HR=0.65; 95% CI: 0.40–1.05); no association was seen following adjustment for red meat and fruit consumption (p>0.10). Conclusions Dietary choices at the time of diagnosis are associated with melanoma-specific survival in patients with melanomas more than 1.00 mm thick. Further validation of our findings in larger cohorts with repeated post-diagnostic measures is warranted to further evaluate whether dietary

  8. Effect of Backing Plate Thermal Property on Friction Stir Welding of 25-mm-Thick AA6061

    NASA Astrophysics Data System (ADS)

    Upadhyay, Piyush; Reynolds, Anthony

    2014-04-01

    By using backing plates made out of materials with widely varying thermal diffusivity this work seeks to elucidate the effects of the root side thermal boundary condition on weld process variables and resulting joint properties. Welds were made in 25.4-mm-thick AA6061 using ceramic, titanium, steel, and aluminum as backing plate (BP) material. Welds were also made using a "composite backing plate" consisting of longitudinal narrow strip of low diffusivity material at the center and two side plates of high diffusivity aluminum. Stir zone temperature during the welding was measured using two thermocouples spot welded at the core of the probe: one at the midplane height and another near the tip of the probe corresponding to the root of the weld. Steady state midplane probe temperatures for all the BPs used were found to be very similar. Near root peak temperature, however, varied significantly among weld made with different BPs all other things being equal. Whereas the near root and midplane temperature were the same in the case of ceramic backing plate, the root peak temperature was 318 K (45 °C) less than the midplane temperature in the case of aluminum BP. The trends of nugget hardness and grain size in through thickness direction were in agreement with the measured probe temperatures. Hardness and tensile test results show that the use of composite BP results in stronger joint compared to monolithic steel BP.

  9. Effects of heat input on mechanical properties of metal inert gas welded 1.6 mm thick galvanized steel sheet

    NASA Astrophysics Data System (ADS)

    Rafiqul, M. I.; Ishak, M.; Rahman, M. M.

    2012-09-01

    It is usually a lot easier and less expensive to galvanize steel before it is welded into useful products. Galvanizing afterwards is almost impossible. In this research work, Galvanized Steel was welded by using the ER 308L stainless steel filler material. This work was done to find out an alternative way of welding and investigate the effects of heat input on the mechanical properties of butt welded joints of Galvanized Steel. A 13.7 kW maximum capacity MIG welding machine was used to join 1.6 mm thick sheet of galvanized steel with V groove and no gap between mm. Heat inputs was gradually increased from 21.06 to 25.07 joules/mm in this study. The result shows almost macro defects free welding and with increasing heat input the ultimate tensile strength and welding efficiency decrease. The Vickers hardness also decreases at HAZ with increasing heat input and for each individual specimen; hardness was lowest in heat affected zone (HAZ), intermediate in base metal and maximum in welded zone. The fracture for all specimens was in the heat affected zone while testing in the universal testing machine.

  10. Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners

    PubMed Central

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

    2013-01-01

    VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event’s time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μm mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μW from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e− RMS at room temperature. PMID:24187382

  11. Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners.

    PubMed

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

    2013-08-01

    VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event's time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μm mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μW from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e(-) RMS at room temperature.

  12. Effect of laser incidence angle on cut quality of 4 mm thick stainless steel sheet using fiber laser

    NASA Astrophysics Data System (ADS)

    Mullick, Suvradip; Agrawal, Arpit Kumar; Nath, Ashish Kumar

    2016-07-01

    Fiber laser has potential to outperform the more traditionally used CO2 lasers in sheet metal cutting applications due to its higher efficiency, better beam quality, reliability and ease of beam delivery through optical fiber. It has been however, reported that the higher focusability and shorter wavelength are advantageous for cutting thin metal sheets up to about 2 mm only. Better focasability results in narrower kerf-width, which leads to an earlier flow separation in the flow of assist gas within the kerf, resulting in uncontrolled material removal and poor cut quality. However, the advarse effect of tight focusability can be taken care by shifting the focal point position towards the bottom surface of work-piece, which results in a wider kerf size. This results in a more stable flow within the kerf for a longer depth, which improves the cut quality. It has also been reported that fiber laser has an unfavourable angle of incidence during cutting of thick sections, resulting in poor absorption at the metal surface. Therefore, the effect of laser incidence angle, along with other process parameters, viz. cutting speed and assist gas pressure on the cut quality of 4 mm thick steel sheet has been investigated. The change in laser incidence angle has been incorporated by inclining the beam towards and away from the cut front, and the quality factors are taken as the ratio of kerf width and the striation depth. Besides the absorption of laser radiation, beam inclination is also expected to influence the gas flow characteristics inside the kerf, shear force phenomena on the molten pool, laser beam coupling and laser power distribution at the inclined cut surface. Design of experiment has been used by implementing response surface methodology (RSM) to study the parametric dependence of cut quality, as well as to find out the optimum cut quality. An improvement in quality has been observed for both the inclination due to the combined effect of multiple phenomena.

  13. Variability of repeated coronary artery calcium measurements by 1.25-mm- and 2.5-mm-thickness images on prospective electrocardiograph-triggered 64-slice CT.

    PubMed

    Horiguchi, Jun; Matsuura, Noriaki; Yamamoto, Hideya; Hirai, Nobuhiko; Kiguchi, Masao; Fujioka, Chikako; Kitagawa, Toshiro; Kohno, Nobuoki; Ito, Katsuhide

    2008-02-01

    High reproducibility on coronary artery calcium scoring is a key requirement in monitoring the progression of coronary atherosclerosis. The purpose of this prospective study is to assess the reproducibility of 1.25-mm- and 2.5-mm-thickness images on prospective electrocardiograph-triggered 64-slice CT with respect to 2.5-mm-thickness images on spiral overlapping reconstruction. One hundred patients suspected of coronary artery disease were scanned twice repeatedly, both on prospective electrocardiograph-triggered step-and-shoot and retrospective electrocardiograph-gated spiral scans. Using 1.25-mm-thickness collimation, 1.25-mm- and 2.5-mm-thickness image sets on prospective scans and 2.5-mm-thickness image sets with 1.25-mm increment (overlapping) on retrospective scans were obtained. Coronary artery calcium scores, interscan variability and interobserver variability were evaluated. The mean interscan variability in coronary artery calcium measurement on 1.25-mm prospective/2.5-mm prospective/2.5-mm overlapping retrospective scans were Agatston: 10%/18%/12%, volume: 10%/12%/10% and mass: 8%/13%/11% for observer 1 and Agatston: 8%/14%/10%, volume: 7%/9%/10% and mass: 7%/10%/9% for observer 2, respectively. The mean interobserver variability was 5% to 14%. In conclusion, prospective electrocardiograph-triggered 64-slice CT using the 1.25-mm prospective scan shows the lowest variability. The 2.5-mm prospective scan on volume or mass scoring shows variability of around 10%, comparable to 2.5-mm-thickness spiral overlapping reconstruction images.

  14. A Monte Carlo simulation study of an improved K-edge log-subtraction X-ray imaging using a photon counting CdTe detector

    NASA Astrophysics Data System (ADS)

    Lee, Youngjin; Lee, Amy Candy; Kim, Hee-Joung

    2016-09-01

    Recently, significant effort has been spent on the development of photons counting detector (PCD) based on a CdTe for applications in X-ray imaging system. The motivation of developing PCDs is higher image quality. Especially, the K-edge subtraction (KES) imaging technique using a PCD is able to improve image quality and useful for increasing the contrast resolution of a target material by utilizing contrast agent. Based on above-mentioned technique, we presented an idea for an improved K-edge log-subtraction (KELS) imaging technique. The KELS imaging technique based on the PCDs can be realized by using different subtraction energy width of the energy window. In this study, the effects of the KELS imaging technique and subtraction energy width of the energy window was investigated with respect to the contrast, standard deviation, and CNR with a Monte Carlo simulation. We simulated the PCD X-ray imaging system based on a CdTe and polymethylmethacrylate (PMMA) phantom which consists of the various iodine contrast agents. To acquired KELS images, images of the phantom using above and below the iodine contrast agent K-edge absorption energy (33.2 keV) have been acquired at different energy range. According to the results, the contrast and standard deviation were decreased, when subtraction energy width of the energy window is increased. Also, the CNR using a KELS imaging technique is higher than that of the images acquired by using whole energy range. Especially, the maximum differences of CNR between whole energy range and KELS images using a 1, 2, and 3 mm diameter iodine contrast agent were acquired 11.33, 8.73, and 8.29 times, respectively. Additionally, the optimum subtraction energy width of the energy window can be acquired at 5, 4, and 3 keV for the 1, 2, and 3 mm diameter iodine contrast agent, respectively. In conclusion, we successfully established an improved KELS imaging technique and optimized subtraction energy width of the energy window, and based on

  15. Evaluation of a CdTe semiconductor based compact gamma camera for sentinel lymph node imaging

    SciTech Connect

    Russo, Paolo; Curion, Assunta S.; Mettivier, Giovanni; Esposito, Michela; Aurilio, Michela; Caraco, Corradina; Aloj, Luigi; Lastoria, Secondo

    2011-03-15

    Purpose: The authors assembled a prototype compact gamma-ray imaging probe (MediPROBE) for sentinel lymph node (SLN) localization. This probe is based on a semiconductor pixel detector. Its basic performance was assessed in the laboratory and clinically in comparison with a conventional gamma camera. Methods: The room-temperature CdTe pixel detector (1 mm thick) has 256x256 square pixels arranged with a 55 {mu}m pitch (sensitive area 14.08x14.08 mm{sup 2}), coupled pixel-by-pixel via bump-bonding to the Medipix2 photon-counting readout CMOS integrated circuit. The imaging probe is equipped with a set of three interchangeable knife-edge pinhole collimators (0.94, 1.2, or 2.1 mm effective diameter at 140 keV) and its focal distance can be regulated in order to set a given field of view (FOV). A typical FOV of 70 mm at 50 mm skin-to-collimator distance corresponds to a minification factor 1:5. The detector is operated at a single low-energy threshold of about 20 keV. Results: For {sup 99m}Tc, at 50 mm distance, a background-subtracted sensitivity of 6.5x10{sup -3} cps/kBq and a system spatial resolution of 5.5 mm FWHM were obtained for the 0.94 mm pinhole; corresponding values for the 2.1 mm pinhole were 3.3x10{sup -2} cps/kBq and 12.6 mm. The dark count rate was 0.71 cps. Clinical images in three patients with melanoma indicate detection of the SLNs with acquisition times between 60 and 410 s with an injected activity of 26 MBq {sup 99m}Tc and prior localization with standard gamma camera lymphoscintigraphy. Conclusions: The laboratory performance of this imaging probe is limited by the pinhole collimator performance and the necessity of working in minification due to the limited detector size. However, in clinical operative conditions, the CdTe imaging probe was effective in detecting SLNs with adequate resolution and an acceptable sensitivity. Sensitivity is expected to improve with the future availability of a larger CdTe detector permitting operation at shorter

  16. The Dosepix detector—an energy-resolving photon-counting pixel detector for spectrometric measurements

    NASA Astrophysics Data System (ADS)

    Zang, A.; Anton, G.; Ballabriga, R.; Bisello, F.; Campbell, M.; Celi, J. C.; Fauler, A.; Fiederle, M.; Jensch, M.; Kochanski, N.; Llopart, X.; Michel, N.; Mollenhauer, U.; Ritter, I.; Tennert, F.; Wölfel, S.; Wong, W.; Michel, T.

    2015-04-01

    The Dosepix detector is a hybrid photon-counting pixel detector based on ideas of the Medipix and Timepix detector family. 1 mm thick cadmium telluride and 300 μm thick silicon were used as sensor material. The pixel matrix of the Dosepix consists of 16 x 16 square pixels with 12 rows of (200 μm)2 and 4 rows of (55 μm)2 sensitive area for the silicon sensor layer and 16 rows of pixels with 220 μm pixel pitch for CdTe. Besides digital energy integration and photon-counting mode, a novel concept of energy binning is included in the pixel electronics, allowing energy-resolved measurements in 16 energy bins within one acquisition. The possibilities of this detector concept range from applications in personal dosimetry and energy-resolved imaging to quality assurance of medical X-ray sources by analysis of the emitted photon spectrum. In this contribution the Dosepix detector, its response to X-rays as well as spectrum measurements with Si and CdTe sensor layer are presented. Furthermore, a first evaluation was carried out to use the Dosepix detector as a kVp-meter, that means to determine the applied acceleration voltage from measured X-ray tubes spectra.

  17. Application of GaAs and CdTe photoconductor detectors to X-ray flash radiography

    NASA Astrophysics Data System (ADS)

    Mathy, F.; Cuzin, M.; Gagelin, J. J.; Mermet, R.; Piaget, B.; Rustique, J.; Verger, L.; Hauducoeur, A.; Nicolas, P.; Le Dain, L.; Hyvernage, M.

    1992-11-01

    Some insulating GaAs and CdTe:Cl photoconductor probes were qualified on high energy X-ray single-shot flash generators. The estimated minimum detected dose per flash corresponding to a 230 mrad direct beam attenuated by 200 mm lead was 20 μ rad. The dynamic range was about 4 decades in amplitude or charge, with a good linearity. Such detectors, by locating the origin of the parasitic scattered beam, could be used to eliminate this parasitic beam in X-ray flash radiography in detonics experiments. Imaging possibilities are mentioned, as well as X-ray generator monitoring with such detectors or with neutron preirradiated photoconductors.

  18. Half-joule output optical-parametric oscillation by using 10-mm-thick periodically poled Mg-doped congruent LiNbO3.

    PubMed

    Ishizuki, Hideki; Taira, Takunori

    2012-08-27

    We present a next generation of large-aperture periodically poled Mg-doped LiNbO3 (PPMgLN) device with 10-mm thickness. Efficient optical parametric oscillation with 540 mJ output energy at 709 mJ pumping by 1.064 µm laser in 10 nanoseconds operation could be demonstrated using the 10-mm-thick PPMgLN with an inversion period of 32.2 µm at total conversion efficiency > 76%. We also confirmed that degradation effect of conversion-efficiency distribution by wedged-inversion structures, which is inevitable in current poling condition of the large-aperture PPMgLN, can be ignored in high-intensity operation. PMID:23037053

  19. Optimal width of barrier region in X/{gamma}-ray Schottky diode detectors based on CdTe and CdZnTe

    SciTech Connect

    Kosyachenko, L. A.; Melnychuk, S. V.; Sklyarchuk, V. M.; Maslyanchuk, O. L.; Sklyarchuk, O. V.; Aoki, T.; Lambropoulos, C. P.; Gnatyuk, V. A.; Grushko, E. V.

    2013-02-07

    The spectral distribution of quantum detection efficiency of X- and {gamma}-ray Schottky diodes based on semi-insulating CdTe or Cd{sub 0.9}Zn{sub 0.1}Te crystals is substantiated and obtained in analytical form. It is shown that the width of the space charge region (SCR) of 6-40 {mu}m at zero bias in CdTe (Cd{sub 0.9}Zn{sub 0.1}Te) Schottky diode is optimal for detecting radiation in the photon energy range above 5-10 keV. Based on the Poisson equation, the relationship between the SCR width and the composition of impurities and the degree of their compensation are investigated. It is shown that the presence of deep levels in the bandgap leads to a considerable increase in space charge density and electric field strength near the crystal surface. However, this effect contributes a small error in the determination of the SCR width using the standard formula for the Schottky diode. It is also shown that the concentration of uncompensated impurities in CdTe and Cd{sub 0.9}Zn{sub 0.1}Te crystals within the 4 Multiplication-Sign 10{sup 11}-10{sup 13} cm{sup -3} range is optimal for the detection efficiency of X- and {gamma}-rays in the photon high-energy range. The record-high values of energy resolution have been obtained in the spectra of {sup 241}Am, {sup 57}Co, {sup 133}Ba and {sup 137}Cs isotopes measured using CdTe crystals with Schottky diodes because the concentration of uncompensated donors in the CdTe crystals (1-2) Multiplication-Sign 10{sup 12} cm{sup -3} falls on an interval of maximum detection efficiency. In the spectrum of {sup 57}Co isotope, the limiting energy resolution has been achieved.

  20. Optimal width of barrier region in X/γ-ray Schottky diode detectors based on CdTe and CdZnTe

    NASA Astrophysics Data System (ADS)

    Kosyachenko, L. A.; Aoki, T.; Lambropoulos, C. P.; Gnatyuk, V. A.; Melnychuk, S. V.; Sklyarchuk, V. M.; Grushko, E. V.; Maslyanchuk, O. L.; Sklyarchuk, O. V.

    2013-02-01

    The spectral distribution of quantum detection efficiency of X- and γ-ray Schottky diodes based on semi-insulating CdTe or Cd0.9Zn0.1Te crystals is substantiated and obtained in analytical form. It is shown that the width of the space charge region (SCR) of 6-40 μm at zero bias in CdTe (Cd0.9Zn0.1Te) Schottky diode is optimal for detecting radiation in the photon energy range above 5-10 keV. Based on the Poisson equation, the relationship between the SCR width and the composition of impurities and the degree of their compensation are investigated. It is shown that the presence of deep levels in the bandgap leads to a considerable increase in space charge density and electric field strength near the crystal surface. However, this effect contributes a small error in the determination of the SCR width using the standard formula for the Schottky diode. It is also shown that the concentration of uncompensated impurities in CdTe and Cd0.9Zn0.1Te crystals within the 4 × 1011-1013 cm-3 range is optimal for the detection efficiency of X- and γ-rays in the photon high-energy range. The record-high values of energy resolution have been obtained in the spectra of 241Am, 57Co, 133Ba and 137Cs isotopes measured using CdTe crystals with Schottky diodes because the concentration of uncompensated donors in the CdTe crystals (1-2) × 1012 cm-3 falls on an interval of maximum detection efficiency. In the spectrum of 57Co isotope, the limiting energy resolution has been achieved.

  1. Influence of Temperature and Time of Post-weld Heat Treatment on Stress Relief in an 800-mm-Thick Steel Weldment

    NASA Astrophysics Data System (ADS)

    Mitra, Abhishek; Siva Prasad, N.; Janaki Ram, G. D.

    2016-04-01

    Ferritic steel weldments are invariably post-weld heat treated for relieving the residual stresses. However, the long duration of post-weld heat treatment (PWHT) required for very thick weldments can adversely affect the mechanical properties and fracture toughness. Thus, there is a need to establish the relative importance of temperature and time of PWHT with respect to stress relief. Accordingly, in the present work, the phenomenon of stress relief (due to PWHT) in an 800-mm-thick steel weldment was investigated using finite element analysis and the results were validated against experimental measurements. An analytical study was also carried out to determine the relative influence of temperature and time of PWHT on stress relief. It was found that time of PWHT plays a more significant role in case of relatively lower PWHT temperatures. It was also found that, for a given value of Hollomon parameter, different combinations of PWHT temperature and time can be employed to achieve the same level of stress relief. A mathematical relationship has been established between Hollomon parameter and magnitude of residual stress after PWHT. It has been shown that residual stress is a monotonically decreasing function of the Hollomon parameter.

  2. Study on weld bead surface profile and angular distortion in 6 mm thick butt weld joints of SS304 using fiber laser

    NASA Astrophysics Data System (ADS)

    Bhargava, P.; Paul, C. P.; Mundra, G.; Premsingh, C. H.; Mishra, S. K.; Nagpure, D.; Kumar, Atul; Kukreja, L. M.

    2014-02-01

    We deployed a 2 kW continuous wave fiber laser integrated with the 5-axis workstation to understand the effect of various processing parameters (laser power, welding speed, beam spot size and chamfer at welded edges) on depth of penetration, angular distortion and welded bead surface profile during autogenous laser welding of 6 mm thick austenitic stainless steel type 304 plates. Full penetration with reduced weld bead surface undulation (<100 µm) and least angular distortion (<0.8°) was achieved for butt joints having chamfered edges of 0.8 mm. The microscopic studies revealed grossly defect-free fusion zone with a few porosities at isolated locations. The microstructure at the fusion zone was largely austenitic with few ferrites and the direction of growth was epitaxial towards the fusion line. The measured values of microhardness at base material and fusion zone were 208±4 HV0.1 and 235±10 HV0.1 respectively. The tensile testing of laser welded samples indicated the ultimate strength >605 MPa and these samples could be bent for an angle >170° without noticeable crack during bend test. The study opened the avenues for the deployment of fiber laser welding technology for applications demanding critical values of surface weld bead profile and distortion.

  3. Tungsten Inert Gas and Friction Stir Welding Characteristics of 4-mm-Thick 2219-T87 Plates at Room Temperature and -196 °C

    NASA Astrophysics Data System (ADS)

    Lei, Xuefeng; Deng, Ying; Yin, Zhimin; Xu, Guofu

    2014-06-01

    2219-T87 aluminum alloy is widely used for fabricating liquid rocket propellant storage tank, due to its admirable cryogenic property. Welding is the dominant joining method in the manufacturing process of aerospace components. In this study, the tungsten inert gas welding and friction stir welding (FSW) characteristics of 4-mm-thick 2219-T87 alloy plate at room temperature (25 °C) and deep cryogenic temperature (-196 °C) were investigated by property measurements and microscopy methods. The studied 2219 base alloy exhibits a low strength plane anisotropy and excellent room temperature and cryogenic mechanical properties. The ultimate tensile strength values of TIG and FSW welding joints can reach 265 and 353 MPa at room temperature, and 342 and 438 MPa at -196 °C, respectively. The base metal consists of elongated deformed grains and many nano-scaled θ (Al2Cu) aging precipitates. Fusion zone and heat-affected zone (HAZ) of the TIG joint are characterized by coarsening dendritic grains and equiaxed recrystallized grains, respectively. The FSW-welded joint consists of the weld nugget zone, thermo-mechanically affected zone (TMAZ), and HAZ. In the weld nugget zone, a micro-scaled sub-grain structure is the main microstructure characteristic. The TMAZ and HAZ are both characterized by coarsened aging precipitates and elongated deformed grains. The excellent FSW welding properties are attributed to the preservation of the working structures and homogenous chemical compositions.

  4. High-Sensitivity High-Speed X-ray Fluorescence Scanning Cadmium Telluride Detector for Deep-Portion Cancer Diagnosis Utilizing Tungsten-Kα-Excited Gadolinium Mapping

    NASA Astrophysics Data System (ADS)

    Yanbe, Yutaka; Sato, Eiichi; Chiba, Hiraku; Maeda, Tomoko; Matsushita, Ryo; Oda, Yasuyuki; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Watanabe, Manabu; Kusachi, Shinya; Sato, Shigehiro; Ogawa, Akira

    2013-09-01

    X-ray fluorescence (XRF) analysis is useful for mapping various atoms in objects. Bremsstrahlung X-rays with energies beyond tantalum (Ta) K-edge energy 67.4 keV are absorbed effectively using a 100-µm-thick Ta filter, and the filtered X-rays including tungsten (W) Kα rays are absorbed by gadolinium (Gd) atoms in objects. The Gd XRF is then produced from Gd atoms in the objects and is counted by a cadmium telluride (CdTe) detector. Gd Kα photons with a maximum count rate of 1 kilo counts per second are dispersed using a multichannel analyzer, and the number of photons is counted by a counter card. The distance between the CdTe detector and the object is minimized to 40 mm to increase the count rate. The object is scanned using an x-y stage with a velocity of 5.0 mm/s, and Gd mapping are shown on a computer monitor. The scan steps of the x- and y-axes were both 2.5 mm, and the photon-counting time per mapping point was 0.5 s. We obtained Gd XRF images at high contrast, and Gd Kα photons were easily detected from cancerous regions in a nude mouse placed behind a 20-mm-thick poly(methyl methacrylate) plate.

  5. Applications of CdTe to nuclear medicine. Final report

    SciTech Connect

    Entine, G.

    1985-05-07

    Uses of cadmium telluride (CdTe) nuclear detectors in medicine are briefly described. They include surgical probes and a system for measuring cerebral blood flow in the intensive care unit. Other uses include nuclear dentistry, x-ray exposure control, cardiology, diabetes, and the testing of new pharmaceuticals. (ACR)

  6. CdTe Timepix detectors for single-photon spectroscopy and linear polarimetry of high-flux hard x-ray radiation.

    PubMed

    Hahn, C; Weber, G; Märtin, R; Höfer, S; Kämpfer, T; Stöhlker, Th

    2016-04-01

    Single-photon spectroscopy of pulsed, high-intensity sources of hard X-rays - such as laser-generated plasmas - is often hampered by the pileup of several photons absorbed by the unsegmented, large-volume sensors routinely used for the detection of high-energy radiation. Detectors based on the Timepix chip, with a segmentation pitch of 55 μm and the possibility to be equipped with high-Z sensor chips, constitute an attractive alternative to commonly used passive solutions such as image plates. In this report, we present energy calibration and characterization measurements of such devices. The achievable energy resolution is comparable to that of scintillators for γ spectroscopy. Moreover, we also introduce a simple two-detector Compton polarimeter setup with a polarimeter quality of (98 ± 1)%. Finally, a proof-of-principle polarimetry experiment is discussed, where we studied the linear polarization of bremsstrahlung emitted by a laser-driven plasma and found an indication of the X-ray polarization direction depending on the polarization state of the incident laser pulse. PMID:27131653

  7. CdTe Timepix detectors for single-photon spectroscopy and linear polarimetry of high-flux hard x-ray radiation

    NASA Astrophysics Data System (ADS)

    Hahn, C.; Weber, G.; Märtin, R.; Höfer, S.; Kämpfer, T.; Stöhlker, Th.

    2016-04-01

    Single-photon spectroscopy of pulsed, high-intensity sources of hard X-rays — such as laser-generated plasmas — is often hampered by the pileup of several photons absorbed by the unsegmented, large-volume sensors routinely used for the detection of high-energy radiation. Detectors based on the Timepix chip, with a segmentation pitch of 55 μm and the possibility to be equipped with high-Z sensor chips, constitute an attractive alternative to commonly used passive solutions such as image plates. In this report, we present energy calibration and characterization measurements of such devices. The achievable energy resolution is comparable to that of scintillators for γ spectroscopy. Moreover, we also introduce a simple two-detector Compton polarimeter setup with a polarimeter quality of (98 ± 1)%. Finally, a proof-of-principle polarimetry experiment is discussed, where we studied the linear polarization of bremsstrahlung emitted by a laser-driven plasma and found an indication of the X-ray polarization direction depending on the polarization state of the incident laser pulse.

  8. Detectors

    DOEpatents

    Orr, Christopher Henry; Luff, Craig Janson; Dockray, Thomas; Macarthur, Duncan Whittemore; Bounds, John Alan; Allander, Krag

    2002-01-01

    The apparatus and method provide techniques through which both alpha and beta emission determinations can be made simultaneously using a simple detector structure. The technique uses a beta detector covered in an electrically conducting material, the electrically conducting material discharging ions generated by alpha emissions, and as a consequence providing a measure of those alpha emissions. The technique also offers improved mountings for alpha detectors and other forms of detectors against vibration and the consequential effects vibration has on measurement accuracy.

  9. Simulation of charge transport in pixelated CdTe

    NASA Astrophysics Data System (ADS)

    Kolstein, M.; Ariño, G.; Chmeissani, M.; De Lorenzo, G.

    2014-12-01

    The Voxel Imaging PET (VIP) Pathfinder project intends to show the advantages of using pixelated semiconductor technology for nuclear medicine applications to achieve an improved image reconstruction without efficiency loss. It proposes designs for Positron Emission Tomography (PET), Positron Emission Mammography (PEM) and Compton gamma camera detectors with a large number of signal channels (of the order of 106). The design is based on the use of a pixelated CdTe Schottky detector to have optimal energy and spatial resolution. An individual read-out channel is dedicated for each detector voxel of size 1 × 1 × 2 mm3 using an application-specific integrated circuit (ASIC) which the VIP project has designed, developed and is currently evaluating experimentally. The behaviour of the signal charge carriers in CdTe should be well understood because it has an impact on the performance of the readout channels. For this purpose the Finite Element Method (FEM) Multiphysics COMSOL software package has been used to simulate the behaviour of signal charge carriers in CdTe and extract values for the expected charge sharing depending on the impact point and bias voltage. The results on charge sharing obtained with COMSOL are combined with GAMOS, a Geant based particle tracking Monte Carlo software package, to get a full evaluation of the amount of charge sharing in pixelated CdTe for different gamma impact points.

  10. SU-E-T-231: Measurements of Gold Nanoparticle-Mediated Proton Dose Enhancement Due to Particle-Induced X-Ray Emission and Activation Products Using Radiochromic Films and CdTe Detector

    SciTech Connect

    Cho, J; Cho, S; Manohar, N; Krishnan, S

    2014-06-01

    Purpose: There have been several reports of enhanced cell-killing and tumor regression when tumor cells and mouse tumors were loaded with gold nanoparticles (GNPs) prior to proton irradiation. While particle-induced xray emission (PIXE), Auger electrons, secondary electrons, free radicals, and biological effects have been suggested as potential mechanisms responsible for the observed GNP-mediated dose enhancement/radiosensitization, there is a lack of quantitative analysis regarding the contribution from each mechanism. Here, we report our experimental effort to quantify some of these effects. Methods: 5-cm-long cylindrical plastic vials were filled with 1.8 mL of either water or water mixed with cylindrical GNPs at the same gold concentration (0.3 mg Au/g) as used in previous animal studies. A piece of EBT2 radiochromic film (30-µm active-layer sandwiched between 80/175-µm outer-layers) was inserted along the long axis of each vial and used to measure dose enhancement due to PIXE from GNPs. Vials were placed at center-of-modulation (COM) and 3-cm up-/down-stream from COM and irradiated with 5 different doses (2–10 Gy) using 10-cm-SOBP 160-MeV protons. After irradiation, films were cleaned and read to determine the delivered dose. A vial containing spherical GNPs (20 mg Au/g) was also irradiated, and gamma-rays from activation products were measured using a cadmium-telluride (CdTe) detector. Results: Film measurements showed no significant dose enhancement beyond the experimental uncertainty (∼2%). There was a detectable activation product from GNPs, but it appeared to contribute to dose enhancement minimally (<0.01%). Conclusion: Considering the composition of EBT2 film, it can be inferred that gold characteristic x-rays from PIXE and their secondary electrons make insignificant contribution to dose enhancement. The current investigation also suggests negligible dose enhancement due to activation products. Thus, previously-reported GNP-mediated proton dose

  11. Static and dynamic fracture toughness of 25mm thick single edge notch bend (SENB) specimen of C-Mn pressure vessel submerged arc weld metal and flaw assessment under dynamic loading

    NASA Astrophysics Data System (ADS)

    Xu, W.; Wiesner, C. S.

    2003-09-01

    Although there are well established procedures for assessing the significance of defects in welded structures in a number of countries, such as BS7910 and R6 procedures in the UK, the Japanese WES 2807 procedure, the API and MPC procedures in the USA and the recently completed SINT AP procedure resulting from European collaboration, there are no clear guidelines for assessment of the effects of dynamic loading. In principle, the standard procedure can be applied for any rate of loading but there is little or no experience of how to allow for the effects of dynamic loading on load magnitude and material properties. Submerge arc weldments of 100mm thick have been manufactured. The effect of loading rate was investigated by testing 25mm thick SENB specimens. The fracture toughness of the weld metal exhibited marked loading rate sensitivity; shift in fracture toughness transition temperature for high loading rate tests of up to 115^{circ}C for 25mm specimens. Finite element (FE) analyses have been carried out to obtain plastic collapse load solutions for SENB fracture mechanics test piece. A simple equation for estimate of dynamic plastic yielding load has been suggested. Flaw assessment under dynamic loading has been demonstrated using the results of dynamic fracture toughness and plastic yiending load. The general methods of assessment of the significance of defects in BS7910 is shown to be applicable to assessments under dynamic loading up to impact.

  12. Results of a Si/Cdte Compton Telescope

    SciTech Connect

    Oonuki, Kousuke; Tanaka, Takaaki; Watanabe, Shin; Takeda, Shin'ichiro; Nakazawa, Kazuhiro; Mitani, Takefumi; Takahashi, Tadayuki; Tajima, Hiroyasu; Fukazawa, Yasushi; Nomachi, Masaharu; /Sagamihara, Inst. Space Astron. Sci. /Tokyo U. /SLAC /Hiroshima U. /Osaka U.

    2005-09-23

    We have been developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. We use a Si strip and CdTe pixel detector for the Compton telescope to cover an energy range from 60 keV. For energies above several hundred keV, the higher efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as an absorber and a scatterer. In order to demonstrate the spectral and imaging capability of a CdTe-based Compton Telescope, we have developed a Compton telescope consisting of a stack of CdTe pixel detectors as a small scale prototype. With this prototype, we succeeded in reconstructing images and spectra by solving the Compton equation from 122 keV to 662 keV. The energy resolution (FWHM) of reconstructed spectra is 7.3 keV at 511 keV and 3.1 keV at 122 keV, respectively. The angular resolution obtained at 511 keV is measured to be 12.2{sup o}(FWHM).

  13. RF sputtering deposition of CdTe on GaAs substrate

    NASA Astrophysics Data System (ADS)

    Adamiec, Krzysztof; Rutkowski, Jaroslaw; Bednarek, S.; Michalski, E.

    1997-06-01

    The fabrication of HgCdTe IR detectors demands high-quality CdTe or CdZnTe substrates. Bulk CdTe tends to twin, therefore large single crystals are generally not available. This problem could be circumvented by growing CdTe epilayers on an alternative large area substrate. Several studies have been made on the growth of CdTe on different substrates such as InSb, GaAs, Si and sapphire by MOCVD and MBE techniques. We report the initial results for the growth of CdTe buffer films on GaAs (100) substrates by sputter epitaxy. This crystal was chosen as the substrate material because of its transparency to IR radiation and availability as large area wafers with high structural perfection. Epitaxial films of CdTe were deposited in a sputtering system with a base pressure of 2 X 10-4 Pa. The GaAs substrate was degreased, etched in standard solution, and mounted immediately on a cooper substrate holder in the system. The substrates were ion etched in the sputtering system to remove surface oxide. The CdTe films were deposited in a wide substrate temperature range from 50 to 450 degrees C. Film thickness ranged from 0.1 to 5 micrometers , and deposition rates from 1 to 5 micrometers /h. The orientations and crystalline quality epitaxial films were characterized by x-ray diffraction. The surface morphology and the cross section of the gown CdTe layers were investigated by Nomarski interference contrast microscope. The optical and the electrical properties of the epitaxial films were investigated too. Structural characterization reveals that crystalline quality is a function of temperature of substrates. The single-crystals films grown at 300 degrees C on GaAs showed a best surface morphology.

  14. Edge effects in a small pixel CdTe for X-ray imaging

    NASA Astrophysics Data System (ADS)

    Duarte, D. D.; Bell, S. J.; Lipp, J.; Schneider, A.; Seller, P.; Veale, M. C.; Wilson, M. D.; Baker, M. A.; Sellin, P. J.; Kachkanov, V.; Sawhney, K. J. S.

    2013-10-01

    Large area detectors capable of operating with high detection efficiency at energies above 30 keV are required in many contemporary X-ray imaging applications. The properties of high Z compound semiconductors, such as CdTe, make them ideally suitable to these applications. The STFC Rutherford Appleton Laboratory has developed a small pixel CdTe detector with 80 × 80 pixels on a 250 μm pitch. Historically, these detectors have included a 200 μm wide guard band around the pixelated anode to reduce the effect of defects in the crystal edge. The latest version of the detector ASIC is capable of four-side butting that allows the tiling of N × N flat panel arrays. To limit the dead space between modules to the width of one pixel, edgeless detector geometries have been developed where the active volume of the detector extends to the physical edge of the crystal. The spectroscopic performance of an edgeless CdTe detector bump bonded to the HEXITEC ASIC was tested with sealed radiation sources and compared with a monochromatic X-ray micro-beam mapping measurements made at the Diamond Light Source, U.K. The average energy resolution at 59.54 keV of bulk and edge pixels was 1.23 keV and 1.58 keV, respectively. 87% of the edge pixels present fully spectroscopic performance demonstrating that edgeless CdTe detectors are a promising technology for the production of large panel radiation detectors for X-ray imaging.

  15. CdTe devices and method of manufacturing same

    SciTech Connect

    Gessert, Timothy A.; Noufi, Rommel; Dhere, Ramesh G.; Albin, David S.; Barnes, Teresa; Burst, James; Duenow, Joel N.; Reese, Matthew

    2015-09-29

    A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

  16. Applications of CdTe to nuclear medicine. Annual report, February 1, 1979-January 31, 1980

    SciTech Connect

    Entine, G

    1980-01-01

    The application of CdTe gamma detectors in nuclear medicine is reported on. An internal probe was developed which can be inserted into the heart to measure the efficiency of various radiopharmaceuticals in the treatment of heart attacks. A second application is an array of detectors which is light enough to be worn by ambulatory patients and can measure the change in cardiac output over an eight hour period during heart attack treatment. The instrument includes an on board tape recorder. (ACR)

  17. Detector, collimator and real-time reconstructor for a new scanning-beam digital x-ray (SBDX) prototype

    NASA Astrophysics Data System (ADS)

    Speidel, Michael A.; Tomkowiak, Michael T.; Raval, Amish N.; Dunkerley, David A. P.; Slagowski, Jordan M.; Kahn, Paul; Ku, Jamie; Funk, Tobias

    2015-03-01

    Scanning-beam digital x-ray (SBDX) is an inverse geometry fluoroscopy system for low dose cardiac imaging. The use of a narrow scanned x-ray beam in SBDX reduces detected x-ray scatter and improves dose efficiency, however the tight beam collimation also limits the maximum achievable x-ray fluence. To increase the fluence available for imaging, we have constructed a new SBDX prototype with a wider x-ray beam, larger-area detector, and new real-time image reconstructor. Imaging is performed with a scanning source that generates 40,328 narrow overlapping projections from 71 x 71 focal spot positions for every 1/15 s scan period. A high speed 2-mm thick CdTe photon counting detector was constructed with 320x160 elements and 10.6 cm x 5.3 cm area (full readout every 1.28 μs), providing an 86% increase in area over the previous SBDX prototype. A matching multihole collimator was fabricated from layers of tungsten, brass, and lead, and a multi-GPU reconstructor was assembled to reconstruct the stream of captured detector images into full field-of-view images in real time. Thirty-two tomosynthetic planes spaced by 5 mm plus a multiplane composite image are produced for each scan frame. Noise equivalent quanta on the new SBDX prototype measured 63%-71% higher than the previous prototype. X-ray scatter fraction was 3.9-7.8% when imaging 23.3-32.6 cm acrylic phantoms, versus 2.3- 4.2% with the previous prototype. Coronary angiographic imaging at 15 frame/s was successfully performed on the new SBDX prototype, with live display of either a multiplane composite or single plane image.

  18. Selective CdTe Nanoheteroepitaxial Growth on Si(100) Substrates Using the Close-Spaced Sublimation Technique Without the Use of a Mask

    NASA Astrophysics Data System (ADS)

    Diaz, A.; Quinones, S. A.; Ferrer, D. A.

    2013-06-01

    The development of HgCdTe detectors requires high sensitivity, small pixel size, low defect density, long-term thermal-cycling reliability, and large-area substrates. CdTe bulk substrates were initially used for epitaxial growth of HgCdTe films. However, CdTe has a lattice mismatch with long-wavelength infrared (LWIR) and middle-wavelength infrared (MWIR) HgCdTe that results in detrimental dislocation densities above mid-106 cm-2. This work explores the use of CdTe/Si as a possible substrate for HgCdTe detectors. Although there is a 19% lattice mismatch between CdTe and Si, the nanoheteroepitaxy (NHE) technique makes it possible to grow CdTe on Si substrates with fewer defects at the CdTe/Si interface. In this work, Si(100) was patterned using photolithography and dry etching to create 500-nm to 1- μm pillars. CdTe was selectively deposited on the pillar surfaces using the close-spaced sublimation (CSS) technique. Scanning electron microscopy (SEM) was used to characterize the CdTe selective growth and grain morphology, and transmission electron microscopy (TEM) was used to analyze the structure and quality of the grains. CdTe selectivity was achieved for most of the substrate and source temperatures used in this study. The ability to selectively deposit CdTe on patterned Si(100) substrates without the use of a mask or seed layer has not been observed before using the CSS technique. The results from this study confirm that CSS has the potential to be an effective and low-cost technique for selective nanoheteroepitaxial growth of CdTe films on Si(100) substrates for infrared detector applications.

  19. CdTe quantum dots for an application in the life sciences

    NASA Astrophysics Data System (ADS)

    Thi Dieu Thuy, Ung; Toan, Pham Song; Chi, Tran Thi Kim; Duy Khang, Dinh; Quang Liem, Nguyen

    2010-12-01

    This report highlights the results of the preparation of semiconductor CdTe quantum dots (QDs) in the aqueous phase. The small size of a few nm and a very high luminescence quantum yield exceeding 60% of these materials make them promisingly applicable to bio-medicine labeling. Their strong, two-photon excitation luminescence is also a good characteristic for biolabeling without interference with the cell fluorescence. The primary results for the pH-sensitive CdTe QDs are presented in that fluorescence of CdTe QDs was used as a proton sensor to detect proton flux driven by adenosine triphosphate (ATP) synthesis in chromatophores. In other words, these QDs could work as pH-sensitive detectors. Therefore, the system of CdTe QDs on chromatophores prepared from the cells of Rhodospirillum rubrum and the antibodies against the beta-subunit of F0F1-ATPase could be a sensitive detector for the avian influenza virus subtype A/H5N1.

  20. Simulation of single-event energy-deposition spreading in a hybrid pixellated detector for γ imaging

    NASA Astrophysics Data System (ADS)

    Manach, Erwan; Gal, Olivier

    2002-07-01

    In the framework of the Medipix2 Collaboration, a new photon-counting chip is being developed made of a 256×256 array of 55 μm-side square pixels. Although the chip was primarily developed for semiconductor X-ray imagers, we think that this type of device could be used in applications such as decommissioning of nuclear facilities where typical sources have γ-ray energies in the range of a few hundred keV. In order to enhance the detection efficiency in this energy range, we envisage connecting the Medipix2 chip to a CdTe or CdZnTe substrate (at least 1 mm thick). The small pixel size, the thickness of the Cd(Zn)Te substrate and the high photon energy motivate us to estimate first the spatial energy spreading following a photon interaction inside the detector. Estimations were made using the MCNP Monte Carlo package by simulating the individual energy distribution for each primary photon interaction. As an illustration of our results, simulating a 660 keV γ source, we found that there are two pixels on average, for each primary interaction, on which the deposited energy exceeds 50 keV. We have also made more accurate simulations using sub-pixels of side 11 μm, in order to evaluate the distance between the barycentre of the deposited energy and the photon impact point. As an example, with a 660 keV γ source, we found that the average of this distance reaches 67 μm when restricted to the events depositing more than 400 keV. If all events are taken into account, the mean distance is 26 μm, even though there is a small proportion of interactions where the scattered photon interacts somewhere else in the detector. Results are presented for different photon energies (60 keV, 660 keV, 1.25 MeV) and different materials (CdTe, GaAs).

  1. Evaluation of the efficiency curve of a Cadmiun Telluride detector for low-energy photon spectrometry.

    PubMed

    Correia, Amanda Ribeiro; Iwahara, Akira; da Cruz, Paulo Alberto Lima; da Silva, Carlos José; Tauhata, Luiz; Poledna, Roberto; da Silva, Ronaldo Lins; de Queiroz Filho, Pedro Pacheco; Lopes, Ricardo Tadeu

    2016-10-01

    The performance of a Cadmiun Telluride (CdTe) detector for low energy photon spectrometry was evaluated. Collected data were analyzed using the basic software package available with the CdTe detector system and the COLEGRAM code developed for photopeak deconvolution at LNHB/France. Several calibrated point sources were used to determine the energy versus efficiency curve. The efficiency curve was used in the determination of main X-ray intensities of (153)Sm and (177)Lu.

  2. Evaluation of the efficiency curve of a Cadmiun Telluride detector for low-energy photon spectrometry.

    PubMed

    Correia, Amanda Ribeiro; Iwahara, Akira; da Cruz, Paulo Alberto Lima; da Silva, Carlos José; Tauhata, Luiz; Poledna, Roberto; da Silva, Ronaldo Lins; de Queiroz Filho, Pedro Pacheco; Lopes, Ricardo Tadeu

    2016-10-01

    The performance of a Cadmiun Telluride (CdTe) detector for low energy photon spectrometry was evaluated. Collected data were analyzed using the basic software package available with the CdTe detector system and the COLEGRAM code developed for photopeak deconvolution at LNHB/France. Several calibrated point sources were used to determine the energy versus efficiency curve. The efficiency curve was used in the determination of main X-ray intensities of (153)Sm and (177)Lu. PMID:27544313

  3. Growth and analysis of micro and nano CdTe arrays for solar cell applications

    NASA Astrophysics Data System (ADS)

    Aguirre, Brandon Adrian

    CdTe is an excellent material for infrared detectors and photovoltaic applications. The efficiency of CdTe/CdS solar cells has increased very rapidly in the last 3 years to ˜20% but is still below the maximum theoretical value of 30%. Although the short-circuit current density is close to its maximum of 30 mA/cm2, the open circuit voltage has potential to be increased further to over 1 Volt. The main limitation that prevents further increase in the open-circuit voltage and therefore efficiency is the high defect density in the CdTe absorber layer. Reducing the defect density will increase the open-circuit voltage above 1 V through an increase in the carrier lifetime and concentration to tau >10 ns and p > 10 16 cm-3, respectively. However, the large lattice mismatch (10%) between CdTe and CdS and the polycrystalline nature of the CdTe film are the fundamental reasons for the high defect density and pose a difficult challenge to solve. In this work, a method to physically and electrically isolate the different kinds of defects at the nanoscale and understand their effect on the electrical performance of CdTe is presented. A SiO2 template with arrays of window openings was deposited between the CdTe and CdS to achieve selective-area growth of the CdTe via close-space sublimation. The diameter of the window openings was varied from the micro to the nanoscale to study the effect of size on nucleation, grain growth, and defect density. The resulting structures enabled the possibility to electrically isolate and individually probe micrometer and nanoscale sized CdTe/CdS cells. Electron back-scattered diffraction was used to observe grain orientation and defects in the miniature cells. Scanning and transmission electron microscopy was used to study the morphology, grain boundaries, grain orientation, defect structure, and strain in the layers. Finally, conducting atomic force microscopy was used to study the current-voltage characteristics of the solar cells. An

  4. Ruggedization of CdZnTe detectors and detector assemblies for radiation detection applications

    NASA Astrophysics Data System (ADS)

    Lu, P. H.; Gomolchuk, P.; Chen, H.; Beitz, D.; Grosser, A. W.

    2015-06-01

    This paper described improvements in the ruggedization of CdZnTe detectors and detector assemblies for use in radiation detection applications. Research included experimenting with various conductive and underfill adhesive material systems suitable for CZT substrates. A detector design with encapsulation patterning was developed to protect detector surfaces and to control spacing between CZT anode and PCB carrier. Robustness of bare detectors was evaluated through temperature cycling and metallization shear testing. Attachment processes using well-chosen adhesives and PCB carrier materials were optimized to improve reliability of detector assemblies, resulted in Improved Attachment Detector Assembly. These detector assemblies were subjected to aggressive temperature cycling, and varying levels of drop/shock and vibration, in accordance with modified JEDEC, ANSI and FedEx testing standards, to assess their ruggedness. Further enhanced detector assembly ruggedization methods were investigated involving adhesive conformal coating, potting and dam filling on detector assemblies, which resulted in the Enhanced Ruggedization Detector Assembly. Large numbers of CZT detectors and detector assemblies with 5 mm and 15 mm thick, over 200 in total, were tested. Their performance was evaluated by exposure to various radioactive sources using comprehensive predefined detector specifications and testing protocols. Detector assemblies from improved attachment and enhanced ruggedization showed stable performances during the harsh environmental condition tests. In conclusion, significant progress has been made in improving the reliability and enhancing the ruggedness of CZT detector assemblies for radiation detection applications deployed in operational environments.

  5. CdTe quantum dots@luminol as signal amplification system for chrysoidine with chemiluminescence-chitosan/graphene oxide-magnetite-molecularly imprinting sensor

    NASA Astrophysics Data System (ADS)

    Duan, Huimin; Li, Leilei; Wang, Xiaojiao; Wang, Yanhui; Li, Jianbo; Luo, Chuannan

    2016-01-01

    A sensitive chemiluminescence (CL) sensor based on chemiluminescence resonance energy transfer (CRET) in CdTe quantum dots@luminol (CdTe QDs@luminol) nanomaterials combined with chitosan/graphene oxide-magnetite-molecularly imprinted polymer (Cs/GM-MIP) for sensing chrysoidine was developed. CdTe QDs@luminol was designed to not only amplify the signal of CL but also reduce luminol consumption in the detection of chrysoidine. On the basis of the abundant hydroxy and amino, Cs and graphene oxide were introduced into the GM-MIP to improve the adsorption ability. The adsorption capacities of chrysoidine by both Cs/GM-MIP and non-imprinted polymer (Cs/GM-NIP) were investigated, and the CdTe QDs@luminol and Cs/GM-MIP were characterized by UV-vis, FTIR, SEM and TEM. The proposed sensor can detect chrysoidine within a linear range of 1.0 × 10- 7 - 1.0 × 10- 5 mol/L with a detection limit of 3.2 × 10- 8 mol/L (3δ) due to considerable chemiluminescence signal enhancement of the CdTe quantum dots@luminol detector and the high selectivity of the Cs/GM-MIP system. Under the optimal conditions of CL, the CdTe QDs@luminol-Cs/GM-MIP-CL sensor was used for chrysoidine determination in samples with satisfactory recoveries in the range of 90-107%.

  6. CdTe quantum dots@luminol as signal amplification system for chrysoidine with chemiluminescence-chitosan/graphene oxide-magnetite-molecularly imprinting sensor.

    PubMed

    Duan, Huimin; Li, Leilei; Wang, Xiaojiao; Wang, Yanhui; Li, Jianbo; Luo, Chuannan

    2016-01-15

    A sensitive chemiluminescence (CL) sensor based on chemiluminescence resonance energy transfer (CRET) in CdTe quantum dots@luminol (CdTe QDs@luminol) nanomaterials combined with chitosan/graphene oxide-magnetite-molecularly imprinted polymer (Cs/GM-MIP) for sensing chrysoidine was developed. CdTe QDs@luminol was designed to not only amplify the signal of CL but also reduce luminol consumption in the detection of chrysoidine. On the basis of the abundant hydroxy and amino, Cs and graphene oxide were introduced into the GM-MIP to improve the adsorption ability. The adsorption capacities of chrysoidine by both Cs/GM-MIP and non-imprinted polymer (Cs/GM-NIP) were investigated, and the CdTe QDs@luminol and Cs/GM-MIP were characterized by UV-vis, FTIR, SEM and TEM. The proposed sensor can detect chrysoidine within a linear range of 1.0×10(-7) - 1.0×10(-5) mol/L with a detection limit of 3.2×10(-8) mol/L (3δ) due to considerable chemiluminescence signal enhancement of the CdTe quantum dots@luminol detector and the high selectivity of the Cs/GM-MIP system. Under the optimal conditions of CL, the CdTe QDs@luminol-Cs/GM-MIP-CL sensor was used for chrysoidine determination in samples with satisfactory recoveries in the range of 90-107%.

  7. Characterisation of an electron collecting CdTe strip sensor using the MYTHEN readout chip

    NASA Astrophysics Data System (ADS)

    Elbracht-Leong, S.; Bergamaschi, A.; Greiffenberg, D.; Peake, D.; Rassool, R.; Schmitt, B.; Toyokawa, H.; Sobbott, B.

    2015-01-01

    MYTHEN is a single photon counting hybrid strip X-ray detector that has found application in x-ray powder diffraction (XRPD) experiments at synchrotrons worldwide. Originally designed to operate with hole collecting silicon sensors, MYTHEN is suited for detecting X-rays above 5 keV, however many PD beamlines have been designed for energies above 50 keV where silicon sensors have an efficiency of only few percent. In order to adapt MYTHEN to meet these energies the absorption efficiency of the sensor must be substantially increased. Cadmium-Telluride (CdTe) has an absorption efficiency approximately 30 times that of silicon at 50 keV, and is therefore a very promising replacement candidate for silicon. Furthermore, the large dynamic range of the pre-amplifier of MYTHEN and its double polarity capability has enabled the characterisation of an electron collecting Schottky type CdTe sensor. A CdTe MYTHEN system has undergone a series of characterisation experiments including stress test of bias and radiation induced polarizations. The performance of this system will be presented and discussed.

  8. Gamma ray detector modules

    NASA Technical Reports Server (NTRS)

    Capote, M. Albert (Inventor); Lenos, Howard A. (Inventor)

    2009-01-01

    A radiation detector assembly has a semiconductor detector array substrate of CdZnTe or CdTe, having a plurality of detector cell pads on a first surface thereof, the pads having a contact metallization and a solder barrier metallization. An interposer card has planar dimensions no larger than planar dimensions of the semiconductor detector array substrate, a plurality of interconnect pads on a first surface thereof, at least one readout semiconductor chip and at least one connector on a second surface thereof, each having planar dimensions no larger than the planar dimensions of the interposer card. Solder columns extend from contacts on the interposer first surface to the plurality of pads on the semiconductor detector array substrate first surface, the solder columns having at least one solder having a melting point or liquidus less than 120 degrees C. An encapsulant is disposed between the interposer circuit card first surface and the semiconductor detector array substrate first surface, encapsulating the solder columns, the encapsulant curing at a temperature no greater than 120 degrees C.

  9. Selective area epitaxy of CdTe

    NASA Astrophysics Data System (ADS)

    Luo, Y. Y.; Cavus, A.; Tamargo, M. C.

    1997-06-01

    We have performed selective area epitaxy (SAE) of CdTe layers grown by molecular beam epitaxy using a shadow mask technique. This technique was chosen over other SAE techniques due to its simplicity and its compatibility with multiple SAE patterning steps. Features as small as 50 microns × 50 microns were obtained with sharp, abrupt side walls and flat mesa tops. Separations between mesas as small as 20 microns were also obtained. Shadowing effects due to the finite thickness of the mask were reduced by placing the CdTe source in a near normal incidence position. Intimate contact between the mask and the substrate was essential in order to achieve good pattern definition.

  10. Schottky Barrier CdTe(Cl) Detectors for Planetary Missions

    NASA Astrophysics Data System (ADS)

    Eisen, Yosef; Floyd, Samuel

    2002-10-01

    Schottky barrier cadmium telluride (CdTe) radiation detectors of dimensions 2mm × 2mm × 1mm and segmented monolithic 3cm × 3 cm × 1mm are under study at GSFC for future NASA planetary instruments. These instruments will perform x-ray fluorescence spectrometry of the surface and monitor the solar x-ray flux spectrum, the excitation source for the characteristic x-rays emitted from the planetary body. The Near Earth Asteroid Rendezvous (NEAR) mission is the most recent example of such a remote sensing technique. Its x-ray fluorescence detectors were gas proportional counters with a back up Si PIN solar monitor. Analysis of NEAR data has shown the necessity to develop a solar x-ray detector with efficiency extending to 30keV. Proportional counters and Si diodes have low sensitivity above 9keV. Our 2mm × 2mm × 1mm CdTe operating at -30°C possesses an energy resolution of 250eV FWHM for 55Fe with unit efficiency to up to 30keV. This is an excellent candidate for a solar monitor. Another ramification of the NEAR data is a need to develop a large area detector system, 20-30 cm2, with cosmic ray charged particle rejection, for measuring the characteristic radiation. A 3cm × 3cm × 1mm Schottky CdTe segmented monolithic detector is under investigation for this purpose. A tiling of 2-3 such detectors will result in the desired area. The favorable characteristics of Schottky CdTe detectors, the system design complexities when using CdTe and its adaptation to future missions will be discussed.

  11. Recycling of CdTe photovoltaic waste

    DOEpatents

    Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

    1999-01-01

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate and electrolyzing the leachate to separate Cd from Te, wherein the Te is deposits onto a cathode while the Cd remains in solution.

  12. The 150 ns detector project: Progress with small detectors

    NASA Astrophysics Data System (ADS)

    Warburton, W. K.; Russell, S. R.; Kleinfelder, Stuart A.; Segal, Julie

    1994-09-01

    This project's long term goal is to develop a pixel area detector capable of 6 MHz frame rates (150 ns/frame). Our milestones toward this goal are: a single pixel, 1 × 256 1D and 8 × 8 2D detectors, 256 × 256 2D detectors and, finally, 1024 × 1024 2D detectors. The design strategy is to supply a complete electronics chain (resetting preamp, selectable gain amplifier, analog-to-digital converter (ADC), and memory) for each pixel. In the final detectors these will all be custom integrated circuits. The front end preamplifiers are being integrated first, since their design and performance are both the most unusual and also critical to the project's success. Similarly, our early work is also concentrating on devising and perfecting detector structures which are thick enough (1 mm) to absorb over 99% of the incident X-rays in the energy range of interest. In this paper we discuss our progress toward the 1 × 256 1D and 8 × 8 2D detectors. We have fabricated sample detectors at Stanford's Center for Integrated Systems and are preparing both to test them individually and to wirebond them to the preamplifier samples to produce our first working small 1D and 2D detectors. We will describe our solutions to the design problems associated with collecting charge in less than 30 ns from 1 mm thick pixels in high resistivity silicon. We have constructed and tested the front end of our preamplifier design using a commercial 1.2 μm CMOS technology and are moving on to produce a few channels of the complete preamplifier, including a switchable gain stage and output stage. We will discuss both the preamplifier design and our initial test results.

  13. Spent-fuel characterization with small CZT detectors

    NASA Astrophysics Data System (ADS)

    Berndt, R.; Mortreau, P.

    2006-08-01

    CdTe detectors may be utilised as miniature instruments for the measurement of gamma spectra in safeguards applications [R. Arlt, V. Gryshchuk, P. Sumah, Nucl. Instr. and Meth. A 428 (1999) 127]. This is applicable for measurements both to fresh fuel and irradiated nuclear fuel. The spectrum analysis, however, is more complicated than with Ge detectors. Some reasons are: the peaks are asymmetric, the peak/Compton ratio is low, peak parameters depend on the count rate and on the properties of individual detector crystals. We developed a spectrum-unfolding code for spectra obtained with CdTe detectors. The code makes use of a series of pattern spectra of the individual instrument. It is applied to fission-product spectra and allows the coarse characterisation of the spent fuel in safeguards inspections.

  14. Recycling of CdTe photovoltaic waste

    DOEpatents

    Goozner, R.E.; Long, M.O.; Drinkard, W.F. Jr.

    1999-04-27

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base. 3 figs.

  15. Recycling of CdTe photovoltaic waste

    DOEpatents

    Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

    1999-04-27

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base.

  16. Cu Migration in Polycrystalline CdTe Solar Cells

    SciTech Connect

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christian

    2014-03-12

    An impurity reaction-diffusion model is applied to Cu defects and related intrinsic defects in polycrystalline CdTe for a better understanding of Cu’s role in the cell level reliability of CdTe PV devices. The simulation yields transient Cu distributions in polycrystalline CdTe during solar cell processing and stressing. Preliminary results for Cu migration using available diffusivity and solubility data show that Cu accumulates near the back contact, a phenomena that is commonly observed in devices after back-contact processing or stress conditions.

  17. Process Development for High Voc CdTe Solar Cells

    SciTech Connect

    Ferekides, C. S.; Morel, D. L.

    2011-05-01

    This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

  18. Accuracy of existing atomic potentials for the CdTe semiconductor compound.

    PubMed

    Ward, D K; Zhou, X W; Wong, B M; Doty, F P; Zimmerman, J A

    2011-06-28

    CdTe and CdTe-based Cd(1-x)Zn(x)Te (CZT) alloys are important semiconductor compounds that are used in a variety of technologies including solar cells, radiation detectors, and medical imaging devices. Performance of such systems, however, is limited due to the propensity of nano- and micro-scale defects that form during crystal growth and manufacturing processes. Molecular dynamics simulations offer an effective approach to study the formation and interaction of atomic scale defects in these crystals, and provide insight on how to minimize their concentrations. The success of such a modeling effort relies on the accuracy and transferability of the underlying interatomic potential used in simulations. Such a potential must not only predict a correct trend of structures and energies of a variety of elemental and compound lattices, defects, and surfaces but also capture correct melting behavior and should be capable of simulating crystalline growth during vapor deposition as these processes sample a variety of local configurations. In this paper, we perform a detailed evaluation of the performance of two literature potentials for CdTe, one having the Stillinger-Weber form and the other possessing the Tersoff form. We examine simulations of structures and the corresponding energies of a variety of elemental and compound lattices, defects, and surfaces compared to those obtained from ab initio calculations and experiments. We also perform melting temperature calculations and vapor deposition simulations. Our calculations show that the Stillinger-Weber parameterization produces the correct lowest energy structure. This potential, however, is not sufficiently transferrable for defect studies. Origins of the problems of these potentials are discussed and insights leading to the development of a more transferrable potential suitable for molecular dynamics simulations of defects in CdTe crystals are provided.

  19. Accuracy of existing atomic potentials for the CdTe semiconductor compound

    NASA Astrophysics Data System (ADS)

    Ward, D. K.; Zhou, X. W.; Wong, B. M.; Doty, F. P.; Zimmerman, J. A.

    2011-06-01

    CdTe and CdTe-based Cd1-xZnxTe (CZT) alloys are important semiconductor compounds that are used in a variety of technologies including solar cells, radiation detectors, and medical imaging devices. Performance of such systems, however, is limited due to the propensity of nano- and micro-scale defects that form during crystal growth and manufacturing processes. Molecular dynamics simulations offer an effective approach to study the formation and interaction of atomic scale defects in these crystals, and provide insight on how to minimize their concentrations. The success of such a modeling effort relies on the accuracy and transferability of the underlying interatomic potential used in simulations. Such a potential must not only predict a correct trend of structures and energies of a variety of elemental and compound lattices, defects, and surfaces but also capture correct melting behavior and should be capable of simulating crystalline growth during vapor deposition as these processes sample a variety of local configurations. In this paper, we perform a detailed evaluation of the performance of two literature potentials for CdTe, one having the Stillinger-Weber form and the other possessing the Tersoff form. We examine simulations of structures and the corresponding energies of a variety of elemental and compound lattices, defects, and surfaces compared to those obtained from ab initio calculations and experiments. We also perform melting temperature calculations and vapor deposition simulations. Our calculations show that the Stillinger-Weber parameterization produces the correct lowest energy structure. This potential, however, is not sufficiently transferrable for defect studies. Origins of the problems of these potentials are discussed and insights leading to the development of a more transferrable potential suitable for molecular dynamics simulations of defects in CdTe crystals are provided.

  20. Device Fabrication using Crystalline CdTe and CdTe Ternary Alloys Grown by MBE

    SciTech Connect

    Zaunbrecher, Katherine; Burst, James; Seyedmohammadi, Shahram; Malik, Roger; Li, Jian V.; Gessert, Timothy A.; Barnes, Teresa

    2015-06-14

    We fabricated epitaxial CdTe:In/CdTe:As homojunction and CdZnTe/CdTe and CdMgTe/CdTe heterojunction devices grown on bulk CdTe substrates in order to study the fundamental device physics of CdTe solar cells. Selection of emitter-layer alloys was based on passivation studies using double heterostructures as well as band alignment. Initial results show significant device integration challenges, including low dopant activation, high resistivity substrates and the development of low-resistance contacts. To date, the highest open-circuit voltage is 715 mV in a CdZnTe/CdTe heterojunction following anneal, while the highest fill factor of 52% was attained in an annealed CdTe homojunction. In general, all currentvoltage measurements show high series resistance, capacitancevoltages measurements show variable doping, and quantum efficiency measurements show low collection. Ongoing work includes overcoming the high resistance in these devices and addressing other possible device limitations such as non-optimum junction depth, interface recombination, and reduced bulk lifetime due to structural defects.

  1. Modeling Copper Diffusion in Polycrystalline CdTe Solar Cells

    SciTech Connect

    Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Guo, Da; Vasileska, Dragica; Ringhofer, Christain

    2014-06-06

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystalline, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately

  2. Extracting Cu Diffusion Parameters in Polycrystalline CdTe

    SciTech Connect

    Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Guo, Da; Dragica, Vasileska; Ringhofer, Christian

    2014-06-13

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystal-line, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately.

  3. CdTe Solar Cells: The Role of Copper

    SciTech Connect

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christain

    2014-06-06

    In this work, we report on developing 1D reaction-diffusion solver to understand the kinetics of p-type doping formation in CdTe absorbers and to shine some light on underlying causes of metastabilities observed in CdTe PV devices. Evolution of intrinsic and Cu-related defects in CdTe solar cell has been studied in time-space domain self-consistently with free carrier transport and Poisson equation. Resulting device performance was simulated as a function of Cu diffusion anneal time showing pronounced effect the evolution of associated acceptor and donor states can cause on device characteristics. Although 1D simulation has intrinsic limitations when applied to poly-crystalline films, the results suggest strong potential of the approach in better understanding of the performance and metastabilities of CdTe photovoltaic device.

  4. Recrystallisation of electrophoretically deposited CdTe films

    NASA Astrophysics Data System (ADS)

    Pande, P. C.; Bocking, S.; Duke, S.; Miles, R. W.; Carter, M. J.; Latimer, I. D.; Hill, R.

    1996-02-01

    Films of CdTe have been produced by a novel low cost process based on electrophoretic deposition using polar organic solvents. The main advantage of this method is the high rate of deposition, greater than 20 μm/min. Details of the deposition process are given and the effects of post-deposition annealing of the samples have also been investigated using XRD, SEM and EDAX. Laser annealing resulted in melting of CdTe producing more compact and robust films.

  5. Strategies for recycling CdTe photovoltaic modules

    SciTech Connect

    Eberspacher, C.; Gay, C.F.; Moskowitz, P.D.

    1994-12-31

    Recycling end-of-life cadmium telluride (CdTe) photovoltaic (PV) modules may enhance the competitive advantage of CdTe PV in the marketplace, but the experiences of industries with comparable Environmental, Health and Safety (EH&S) challenges suggest that collection and recycling costs can impose significant economic burdens. Customer cooperation and pending changes to US Federal law may improve recycling economics.

  6. CdTe Photovoltaics for Sustainable Electricity Generation

    NASA Astrophysics Data System (ADS)

    Munshi, Amit; Sampath, Walajabad

    2016-09-01

    Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1- x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

  7. High-quality CdTe films from nanoparticle precursors

    SciTech Connect

    Schulz, D.L.; Pehnt, M.; Urgiles, E.

    1996-05-01

    In this paper the authors demonstrate that nanoparticulate precursors coupled with spray deposition offers an attractive route into electronic materials with improved smoothness, density, and lower processing temperatures. Employing a metathesis approach, cadmium iodide was reacted with sodium telluride in methanol solvent, resulting in the formation of soluble NaI and insoluble CdTe nanoparticles. After appropriate chemical workup, methanol-capped CdTe colloids were isolated. CdTe thin film formation was achieved by spray depositing the nanoparticle colloids (25-75 {Angstrom} diameter) onto substrates at elevated temperatures (T = 280-440{degrees}C) with no further thermal treatment. These films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Cubic CdTe phase formation was observed by XRD, with a contaminant oxide phase also detected. XPS analysis showed that CdTe films produced by this one-step method contained no Na or C and substantial O. AFM gave CdTe grain sizes of {approx}0.1-0.3 {mu}m for film sprayed at 400{degrees}C. A layer-by-layer film growth mechanism proposed for the one-step spray deposition of nanoparticle precursors will be discussed.

  8. Imaging performance comparison between a LaBr3: Ce scintillator based and a CdTe semiconductor based photon counting compact gamma camera.

    PubMed

    Russo, P; Mettivier, G; Pani, R; Pellegrini, R; Cinti, M N; Bennati, P

    2009-04-01

    The authors report on the performance of two small field of view, compact gamma cameras working in single photon counting in planar imaging tests at 122 and 140 keV. The first camera is based on a LaBr3: Ce scintillator continuous crystal (49 x 49 x 5 mm3) assembled with a flat panel multianode photomultiplier tube with parallel readout. The second one belongs to the class of semiconductor hybrid pixel detectors, specifically, a CdTe pixel detector (14 x 14 x 1 mm3) with 256 x 256 square pixels and a pitch of 55 microm, read out by a CMOS single photon counting integrated circuit of the Medipix2 series. The scintillation camera was operated with selectable energy window while the CdTe camera was operated with a single low-energy detection threshold of about 20 keV, i.e., without energy discrimination. The detectors were coupled to pinhole or parallel-hole high-resolution collimators. The evaluation of their overall performance in basic imaging tasks is presented through measurements of their detection efficiency, intrinsic spatial resolution, noise, image SNR, and contrast recovery. The scintillation and CdTe cameras showed, respectively, detection efficiencies at 122 keV of 83% and 45%, intrinsic spatial resolutions of 0.9 mm and 75 microm, and total background noises of 40.5 and 1.6 cps. Imaging tests with high-resolution parallel-hole and pinhole collimators are also reported.

  9. A photon counting CdTe gamma- and X-ray camera

    NASA Astrophysics Data System (ADS)

    Spartiotis, Konstantinos; Leppänen, Anssi; Pantsar, Tuomas; Pyyhtiä, Jouni; Laukka, Pasi; Muukkonen, Kari; Männistö, Olli; Kinnari, Jussi; Schulman, Tom

    2005-09-01

    A photon counting CdTe imaging camera suitable for gamma- and X-ray detection has been developed and tested. The current full active imaging area of the gamma/X-ray camera covers 44×44 mm 2. The camera is built of eight individual detector hybrids each consisting of a pixelated CdTe detector with dimensions of 22×11 mm 2 and solder bump-bonded to a photon counting custom-designed application specific integrated circuit (ASIC). The ASICs are realized in a mixed signal, 0.35 μm 4 metal 2 poly CMOS process. The effective pixel size (image pixel pitch) is 0.5 mm. To enable higher count rate imaging and to achieve better position resolution in X-ray CT scanning each pixel is divided both on the CdTe detector and on the ASIC into two sub-pixels with dimensions 0.25×0.5 mm 2. Every pixel circuit has two preamps each connected to one sub-pixel and feeding signal to a separate comparator. The digital pulses of the two distinct comparators are recorded by one common 8-bit counter. The amplifier offsets can be adjusted individually with 3-bit accuracy to compensate for process mismatch. A similar 3-bit gain tuning common to the two amplifiers in one pixel circuit is also implemented. A globally tuneable threshold voltage generated externally with high accuracy is used for energy discrimination. The camera can be operated both in the real time imaging mode with a maximum speed of 100 frames/s and in the accumulation mode with user adjustable counting time. Experimental data collected from a fully operational eight hybrid gamma/X-ray camera is presented and compared to simulated data. The camera exhibits excellent sensitivity and a dynamic range of 1:14,000,000. A sharp line spread function indicates the spatial resolution to be limited only by the pixel size (0.5 mm). A single pixel energy resolution of FWHM 4.7 keV at 122 keV (3.9%) was determined from measured 57Co spectra. The peak width of the spectrum combined from all pixels was somewhat larger due to calibration

  10. Preparation and properties of evaporated CdTe films compared with single crystal CdTe. Progress report No. 1, October 1, 1980-January 31, 1981

    SciTech Connect

    Bube, R. H.

    1981-01-01

    This program is concerned with the investigation of the materials properties of CdTe thin films deposited by hot-wall vacuum evaporation and of CdTe single crystalline material, particularly those relevant to solar cell applications in which CdTe is the absorbing member. Progress is reported on: (a) an evaluation of CdTe homojunctions formed by HWVE of CdTe by Walter Huber at the laboratory of Dr. Adolfo Lopez-Otero at the Institut fuer Physik of the University of Linz, using single crystal p-type CdTe from Stanford as a substrate; (b) the design and construction of a HWVE apparatus at Stanford; and (c) properties of grain boundaries in large grain polycrystalline CdTe.

  11. CdTe Thin Film Solar Cells and Modules Tutorial; NREL (National Renewable Energy Laboratory)

    SciTech Connect

    Albin, David S.

    2015-06-13

    This is a tutorial presented at the 42nd IEEE Photovoltaics Specialists Conference to cover the introduction, background, and updates on CdTe cell and module technology, including CdTe cell and module structure and fabrication.

  12. High-Resolution PET Detector. Final report

    SciTech Connect

    Karp, Joel

    2014-03-26

    The objective of this project was to develop an understanding of the limits of performance for a high resolution PET detector using an approach based on continuous scintillation crystals rather than pixelated crystals. The overall goal was to design a high-resolution detector, which requires both high spatial resolution and high sensitivity for 511 keV gammas. Continuous scintillation detectors (Anger cameras) have been used extensively for both single-photon and PET scanners, however, these instruments were based on NaI(Tl) scintillators using relatively large, individual photo-multipliers. In this project we investigated the potential of this type of detector technology to achieve higher spatial resolution through the use of improved scintillator materials and photo-sensors, and modification of the detector surface to optimize the light response function.We achieved an average spatial resolution of 3-mm for a 25-mm thick, LYSO continuous detector using a maximum likelihood position algorithm and shallow slots cut into the entrance surface.

  13. Combining Surface Treatments with Shallow Slots to Improve the Spatial Resolution Performance of Continuous, Thick LYSO Detectors for PET.

    PubMed

    Kaul, M; Surti, S; Karp, J S

    2013-02-01

    Positron emission tomography (PET) detectors based on continuous scintillation crystals can achieve very good performance and have a number of practical advantages compared to detectors based on a pixelated array of crystals. Our goal is to develop a thick continuous detector with high energy and spatial resolution, along with high γ-photon capture efficiency. We examine the performance of two crystal blocks: a 46 × 46 × 14 mm(3) and a 48 × 48 × 25 mm(3) block of LYSO (Lutetium Yttrium Orthosilicate). Using Maximum Likelihood (ML) positioning based upon the light response function (LRF) in the 14 mm thick crystal, we measure a spatial resolution of 3 mm in the central region of the crystal with degradation near the edges due to reflections off the crystal sides. We also show that we can match the spatial resolution achieved using a 14 mm thick crystal by using a 25 mm thick crystal with slots cut into the gamma entrance surface to narrow the LRF. We also find that we can improve the spatial resolution performance near the detector edges by reducing the reflectivity of the crystal sides, albeit with some loss in energy resolution. PMID:24077642

  14. Characterization of Pixelated Cadmium-Zinc-Telluride Detectors for Astrophysical Applications

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Sharma, Dharma; Ramsey, Brian; Seller, Paul

    2003-01-01

    Comparisons of charge sharing and charge loss measurements between two pixelated Cadmium-Zinc-Telluride (CdZnTe) detectors are discussed. These properties along with the detector geometry help to define the limiting energy resolution and spatial resolution of the detector in question. The first detector consists of a 1-mm-thick piece of CdZnTe sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). Signal readout is via discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). This crystal is bonded to a custom-built readout chip (ASIC) providing all front-end electronics to each of the 256 independent pixels. These detectors act as precursors to that which will be used at the focal plane of the High Energy Replicated Optics (HERO) telescope currently being developed at Marshall Space Flight Center. With a telescope focal length of 6 meters, the detector needs to have a spatial resolution of around 200 microns in order to take full advantage of the HERO angular resolution. We discuss to what degree charge sharing will degrade energy resolution but will improve our spatial resolution through position interpolation.

  15. Thin film cadmium telluride charged particle sensors for large area neutron detectors

    SciTech Connect

    Murphy, J. W.; Smith, L.; Calkins, J.; Mejia, I.; Cantley, K. D.; Chapman, R. A.; Quevedo-Lopez, M.; Gnade, B.; Kunnen, G. R.; Allee, D. R.; Sastré-Hernández, J.; Contreras-Puente, G.; Mendoza-Pérez, R.

    2014-09-15

    Thin film semiconductor neutron detectors are an attractive candidate to replace {sup 3}He neutron detectors, due to the possibility of low cost manufacturing and the potential for large areas. Polycrystalline CdTe is found to be an excellent material for thin film charged particle detectors—an integral component of a thin film neutron detector. The devices presented here are characterized in terms of their response to alpha and gamma radiation. Individual alpha particles are detected with an intrinsic efficiency of >80%, while the devices are largely insensitive to gamma rays, which is desirable so that the detector does not give false positive counts from gamma rays. The capacitance-voltage behavior of the devices is studied and correlated to the response due to alpha radiation. When coupled with a boron-based neutron converting material, the CdTe detectors are capable of detecting thermal neutrons.

  16. High-temporal-resolution CdTe nuclear stethoscope for cardiac γ-ventriculography: preclinical evaluation

    NASA Astrophysics Data System (ADS)

    Eclancher, Bernard; Arntz, Y.; Chambron, Jacques; Prat, Vincent; Perret, C.; Karman, Miklos; Pszota, Agnes; Nemeth, Laszlo

    1999-10-01

    A hand-size probe including 64 elementary 5 X 5 X 2 mm CdTe detectors has been optimized to detect the (gamma) tracer 99Tc in the heart left ventricle. The system, has been developed, not for imaging, allowing acquisitions at 33 Hz to describe the labeled blood volume variations. The (gamma) -counts variations were found accurately proportional to the known volume variations of an artificial ventricle paced at variable rate and systolic volume. Softwares for on line data monitoring and for post-processing have been developed for beat to beat assessment of cardiac performance at rest and during physical exercise. The evaluation of this probe has been performed on 5 subjects in the Nucl Dep of Balatonfured Cardiology Hospital. It appears that the probe needs to be better shielded to work properly in the hot environment of the ventricle, but can provide reliable ventriculography, even under heavy exercise load, although the ventricle volume itself is unknown.

  17. Hard X-ray polarimetry with Caliste, a high performance CdTe based imaging spectrometer

    NASA Astrophysics Data System (ADS)

    Antier, S.; Ferrando, P.; Limousin, O.; Caroli, E.; Curado da Silva, R. M.; Blondel, C.; Chipaux, R.; Honkimaki, V.; Horeau, B.; Laurent, P.; Maia, J. M.; Meuris, A.; Del Sordo, S.; Stephen, J. B.

    2015-06-01

    Since the initial exploration of the X- and soft γ-ray sky in the 60's, high-energy celestial sources have been mainly characterized through imaging, spectroscopy and timing analysis. Despite tremendous progress in the field, the radiation mechanisms at work in sources such as neutrons stars, black holes, and Active Galactic Nuclei are still unclear. The polarization state of the radiation is an observational parameter which brings key additional information about the physical processes in these high energy sources, allowing the discrimination between competing models which may otherwise all be consistent with other types of measurement. This is why most of the projects for the next generation of space missions covering the few tens of keV to the MeV region require a polarization measurement capability. A key element enabling this capability, in this energy range, is a detector system allowing the identification and characterization of Compton interactions as they are the main process at play. The compact hard X-ray imaging spectrometer module, developed in CEA with the generic name of "Caliste" module, is such a detector. In this paper, we present experimental results for two types of Caliste-256 modules, one based on a CdTe crystal, the other one on a CdZnTe crystal, which have been exposed to linearly polarized beams at the European Synchrotron Radiation Facility (ESRF). These results, obtained at 200 and 300 keV, demonstrate the capability of these modules to detect Compton events and to give an accurate determination of the polarization parameters (polarization angle and fraction) of the incoming beam. For example, applying an optimized selection to our data set, equivalent to select 90° Compton scattered interactions in the detector plane, we find a modulation factor Q of 0.78 ± 0.06 in the 200-300 keV range. The polarization angle and fraction are derived with accuracies of approximately 1° and 5 % respectively for both CdZnTe and CdTe crystals. The

  18. Reduced blinking behavior of single 2-mercapto ethanol capped CdTe quantum dots

    NASA Astrophysics Data System (ADS)

    Mandal, Abhijit; Tamai, Naoto

    2013-11-01

    Water soluble small size CdTe QDs were synthesized by using 2-mercapto ethanol (2ME) as stabilizer. The optimum size of QDs was obtained after certain time of reflux. Synthesized 2ME capped CdTe QDs show large Stokes shifted photoluminescence. At the single particle detection level, 2ME capped CdTe QDs showed reduced blinking behavior compared to that of TGA capped CdTe QDs. These results indicate that the thiol moiety of 2ME, which is a strong electron donor, saturated the surface traps with electrons, preventing the traps from accepting the Auger ionized electrons from the core of CdTe QD.

  19. Room temperature semiconductor detectors for safeguards measurements

    NASA Astrophysics Data System (ADS)

    Arlt, R.; Rundquist, D. E.

    A summary is given of the principal areas of application where CdTe detectors are presently used by the IAEA in nuclear material safeguards. Hemispheric detectors with a sensitive volume of about 20 mm 3 have their principal application in the verification of irradiated nuclear material. Larger volume hemispheric detectors are used for the verification of unirradiated material. Their availability, however, is still limited. Problems with the commercial supply of detectors and with ruggedizing the design of the miniature detection probes need to be solved. New results which are relevant for future applications are described. It has been shown that hemispheric detectors made of CdZnTe provide a resolution of 3-4% and a peak/Compton ratio larger than two for 137Cs. Large volume planar CdZnTe have been used in conjunction with pulse shape discrimination electronics. The detector efficiency, however, still remains below the values expected from their geometric dimensions. A new technique to achieve single charge collection in large volume CdZnTe detectors has been developed. Planar detectors with PIN structure and Peltier cooling have further improved. However, the problem of long term stability has not been solved yet. Silicon detectors are increasingly used in unattended radiation monitoring systems. They have a proven long term stability and can cover a signal range of 5-6 decades if used with fast pulse counting electronics.

  20. Advances in CdTe R&D at NREL

    SciTech Connect

    Wu, X.; Zhou, J.; Keane, J. C.; Dhere, R. G.; Albin, D. S.; Gessert, T. A.; DeHart, C.; Duda, A.; Ward, J. J.; Yan, Y.; Teeter, G.; Levi, D. H.; Asher, S.; Perkins, C.; Moutinho, H. R.; To, B.

    2005-11-01

    This paper summarizes the following R&D accomplishments at National Renewable Energy Laboratory (NREL): (1) Developed several novel materials and world-record high-efficiency CdTe solar cell, (2) Developed "one heat-up step" manufacturing processes, and (3) Demonstrated 13.9% transparent CdTe cell and 15.3% CdTe/CIS polycrystalline tandem solar cell. Cadmium telluride has been well recognized as a promising photovoltaic material for thin-film solar cells because of its near-optimum bandgap of ~1.5 eV and its high absorption coefficient. Impressive results have been achieved in the past few years for polycrystalline CdTe thin-film solar cells at NREL. In this paper, we summarize some recent R&D activities at NREL.

  1. Resetting the Defect Chemistry in CdTe

    SciTech Connect

    Metzger, Wyatt K.; Burst, James; Albin, David; Colegrove, Eric; Moseley, John; Duenow, Joel; Farrell, Stuart; Moutinho, Helio; Reese, Matt; Johnston, Steve; Barnes, Teresa; Perkins, Craig; Guthrey, Harvey; Al-Jassim, Mowafak

    2015-06-14

    CdTe cell efficiencies have increased from 17% to 21% in the past three years and now rival polycrystalline Si [1]. Research is now targeting 25% to displace Si, attain costs less than 40 cents/W, and reach grid parity. Recent efficiency gains have come largely from greater photocurrent. There is still headroom to lower costs and improve performance by increasing open-circuit voltage (Voc) and fill factor. Record-efficiency CdTe cells have been limited to Voc <; 880 mV, whereas GaAs can attain Voc of 1.10 V with a slightly smaller bandgap [2,3]. To overcome this barrier, we seek to understand and increase lifetime and carrier concentration in CdTe. In polycrystalline structures, lifetime can be limited by interface and grain-boundary recombination, and attaining high carrier concentration is complicated by morphology.

  2. Hard x-ray response of pixellated CdZnTe detectors

    SciTech Connect

    Abbene, L.; Caccia, S.; Bertuccio, G.

    2009-06-15

    In recent years, the development of cadmium zinc telluride (CdZnTe) detectors for x-ray and gamma ray spectrometry has grown rapidly. The good room temperature performance and the high spatial resolution of pixellated CdZnTe detectors make them very attractive in space-borne x-ray astronomy, mainly as focal plane detectors for the new generation of hard x-ray focusing telescopes. In this work, we investigated on the spectroscopic performance of two pixellated CdZnTe detectors coupled with a custom low noise and low power readout application specific integrated circuit (ASIC). The detectors (10x10x1 and 10x10x2 mm{sup 3} single crystals) have an anode layout based on an array of 256 pixels with a geometric pitch of 0.5 mm. The ASIC, fabricated in 0.8 mum BiCMOS technology, is equipped with eight independent channels (preamplifier and shaper) and characterized by low power consumption (0.5 mW/channel) and low noise (150-500 electrons rms). The spectroscopic results point out the good energy resolution of both detectors at room temperature [5.8% full width at half maximum (FWHM) at 59.5 keV for the 1 mm thick detector; 5.5% FWHM at 59.5 keV for the 2 mm thick detector) and low tailing in the measured spectra, confirming the single charge carrier sensing properties of the CdZnTe detectors equipped with a pixellated anode layout. Temperature measurements show optimum performance of the system (detector and electronics) at T=10 deg.C and performance degradation at lower temperatures. The detectors and the ASIC were developed by our collaboration as two small focal plane detector prototypes for hard x-ray multilayer telescopes operating in the 20-70 keV energy range.

  3. Improved process for the TlBr single-crystal detector

    NASA Astrophysics Data System (ADS)

    Kozlov, Vasilij; Andersson, Hans; Gostilo, Vladimir; Leskelä, Markku; Owens, Alan; Shorohov, Mihail; Sipilä, Heikki

    2008-06-01

    The combination of Bridgman, recrystallization by dissolving in pure water under hydrothermal conditions and travelling molten zone (TMZ) methods were used for TlBr purification. Detectors of 0.5 and 3 mm thickness were produced from a single crystal grown by the TMZ method. The samples had stable spectrometric characteristics from -40 °C to room temperature. A resolution of 3.7% at 60 keV ( 241Am source) was attained for 3-mm sample at 0 °C. Electrical and spectroscopic properties of the detectors are reported and discussed.

  4. Atomic Structure of Twin Boundaries in CdTe

    SciTech Connect

    Yan, Y.; Jones, K. M.; Al-Jassim, M. M.

    2003-05-01

    Using the combination of high-resolution transmission electron microscopy, first-principles density-functional total energy calculations, and image simulations, we determined the atomic structure of lamellar twin and double-positioning twin boundaries in CdTe. We find that the structure of lamellar twin boundaries has no dangling bonds or wrong bonds; thus, it results in negligible effects on the electronic properties. The structure of double-positioning twin boundaries, however, contain both Cd and Te dangling bonds, and therefore produce energy states in the bandgap that are detrimental to the electronic properties of CdTe.

  5. Compton imager using room temperature silicon detectors

    NASA Astrophysics Data System (ADS)

    Kurfess, James D.; Novikova, Elena I.; Phlips, Bernard F.; Wulf, Eric A.

    2007-08-01

    We have been developing a multi-layer Compton Gamma Ray Imager using position-sensitive, intrinsic silicon detectors. Advantages of this approach include room temperature operation, reduced Doppler broadening, and use of conventional silicon fabrication technologies. We have obtained results on the imaging performance of a multi-layer instrument where each layer consists of a 2×2 array of double-sided strip detectors. Each detector is 63 mm×63 mm×2 mm thick and has 64 strips providing a strip pitch of approximately 0.9 mm. The detectors were fabricated by SINTEF ICT (Oslo Norway) from 100 mm diameter wafers. The use of large arrays of silicon detectors appears especially advantageous for applications that require excellent sensitivity, spectral resolution and imaging such as gamma ray astrophysics, detection of special nuclear materials, and medical imaging. The multiple Compton interactions (three or more) in the low-Z silicon enable the energy and direction of the incident gamma ray to be determined without full deposition of the incident gamma-ray energy in the detector. The performance of large volume instruments for various applications are presented, including an instrument under consideration for NASA's Advanced Compton Telescope (ACT) mission and applications to Homeland Security. Technology developments that could further extend the sensitivity and performance of silicon Compton Imagers are presented, including the use of low-energy (few hundred keV) electron tracking within novel silicon detectors and the potential for a wafer-bonding approach to produce thicker, position-sensitive silicon detectors with an associated reduction of required electronics and instrument cost.

  6. Ion-beam-induced damage formation in CdTe

    SciTech Connect

    Rischau, C. W.; Schnohr, C. S.; Wendler, E.; Wesch, W.

    2011-06-01

    Damage formation in <111>- and <112>-oriented CdTe single crystals irradiated at room temperature and 15 K with 270 keV Ar or 730 keV Sb ions was investigated in situ using Rutherford backscattering spectroscopy (RBS) in channeling configuration. Defect profiles were calculated from the RBS spectra using the computer code DICADA and additional energy-dependent RBS measurements were performed to identify the type of defects. At both temperatures no formation of a buried amorphous layer was detected even after prolonged irradiation with several 10{sup 16} ions/cm{sup 2}. The fact that CdTe is not rendered amorphous even at 15 K suggests that the high resistance to amorphization is caused by the high ionicity of CdTe rather than thermal effects. The calculated defect profiles show the formation of a broad defect distribution that extends much deeper into the crystal than the projected range of the implanted ions at both temperatures. The post-range defects in CdTe thus do not seem to be of thermal origin either, but are instead believed to result from migration driven by the electronic energy loss.

  7. Radiative and interfacial recombination in CdTe heterostructures

    SciTech Connect

    Swartz, C. H. Edirisooriya, M.; LeBlanc, E. G.; Noriega, O. C.; Jayathilaka, P. A. R. D.; Ogedengbe, O. S.; Hancock, B. L.; Holtz, M.; Myers, T. H.; Zaunbrecher, K. N.

    2014-12-01

    Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 10{sup 10 }cm{sup −2} and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10{sup −10} cm{sup 3}s{sup −1}. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.

  8. Radiation detectors: needs and prospects

    SciTech Connect

    Armantrout, G.A.

    1981-01-01

    Important applications for x- and ..gamma..-ray spectroscopy are found in prospecting, materials characterization, environmental monitoring, the life sciences, and nuclear physics. The specific requirements vary for each application with varying degrees of emphasis on either spectrometer resolution, detection efficiency, or both. Since no one spectrometer is ideally suited to this wide range of needs, compromises are usually required. Gas and scintillation spectrometers have reached a level of maturity, and recent interest has concentrated on semiconductor spectrometers. Germanium detectors are showing continuing refinement and are the spectrometers of choice for high resolution applications. The new high-Z semiconductors, such as CdTe and HgI/sub 2/, have shown steady improvement but are limited in both resolution and size and will likely be used only in applications which require their unique properties.

  9. Electrostatic assembles and optical properties of Au CdTe QDs and Ag/Au CdTe QDs

    NASA Astrophysics Data System (ADS)

    Yang, Dongzhi; Wang, Wenxing; Chen, Qifan; Huang, Yuping; Xu, Shukun

    2008-09-01

    Au-CdTe and Ag/Au-CdTe assembles were firstly investigated through the static interaction between positively charged cysteamine-stabilized CdTe quantum dots (QDs) and negatively charged Au or core/shell Ag/Au nano-particles (NCs). The CdTe QDs synthesized in aqueous solution were capped with cysteamine which endowed them positive charges on the surface. Both Au and Ag/Au NCs were prepared through reducing precursors with gallic acid obtained from the hydrolysis of natural plant poly-phenols and favored negative charges on the surface of NCs. The fluorescence spectra of CdTe QDs exhibited strong quenching with the increase of added Au or Ag/Au NCs. Railey resonance scattering spectra of Au or Ag/Au NCs increased firstly and decreased latter with the concentration of CdTe QDs, accompanied with the solution color changing from red to purple and colorless at last. Experimental results on the effects of gallic acid, chloroauric acid tetrahydrate and other reagents demonstrated the static interaction occurred between QDs and NCs. This finding reveals the possibilities to design and control optical process and electromagnetic coupling in hybrid structures.

  10. Impact of detector design on imaging performance of a long axial field-of-view, whole-body PET scanner

    NASA Astrophysics Data System (ADS)

    Surti, S.; Karp, J. S.

    2015-07-01

    Current generation of commercial time-of-flight (TOF) PET scanners utilize 20-25 mm thick LSO or LYSO crystals and have an axial FOV (AFOV) in the range of 16-22 mm. Longer AFOV scanners would provide increased intrinsic sensitivity and require fewer bed positions for whole-body imaging. Recent simulation work has investigated the sensitivity gains that can be achieved with these long AFOV scanners, and has motivated new areas of investigation such as imaging with a very low dose of injected activity as well as providing whole-body dynamic imaging capability in one bed position. In this simulation work we model a 72 cm long scanner and prioritize the detector design choices in terms of timing resolution, crystal size (spatial resolution), crystal thickness (detector sensitivity), and depth-of-interaction (DOI) measurement capability. The generated list data are reconstructed with a list-mode OSEM algorithm using a Gaussian TOF kernel that depends on the timing resolution and blob basis functions for regularization. We use lesion phantoms and clinically relevant metrics for lesion detectability and contrast measurement. The scan time was fixed at 10 min for imaging a 100 cm long object assuming a 50% overlap between adjacent bed positions. Results show that a 72 cm long scanner can provide a factor of ten reduction in injected activity compared to an identical 18 cm long scanner to get equivalent lesion detectability. While improved timing resolution leads to further gains, using 3 mm (as opposed to 4 mm) wide crystals does not show any significant benefits for lesion detectability. A detector providing 2-level DOI information with equal crystal thickness also does not show significant gains. Finally, a 15 mm thick crystal leads to lower lesion detectability than a 20 mm thick crystal when keeping all other detector parameters (crystal width, timing resolution, and DOI capability) the same. However, improved timing performance with 15 mm

  11. Direct Measurement of Mammographic X-Ray Spectra with a Digital CdTe Detection System

    PubMed Central

    Abbene, Leonardo; Gerardi, Gaetano; Principato, Fabio; Sordo, Stefano Del; Raso, Giuseppe

    2012-01-01

    In this work we present a detection system, based on a CdTe detector and an innovative digital pulse processing (DPP) system, for high-rate X-ray spectroscopy in mammography (1–30 keV). The DPP system performs a height and shape analysis of the detector pulses, sampled and digitized by a 14-bit, 100 MHz ADC. We show the results of the characterization of the detection system both at low and high photon counting rates by using monoenergetic X-ray sources and a nonclinical X-ray tube. The detection system exhibits excellent performance up to 830 kcps with an energy resolution of 4.5% FWHM at 22.1 keV. Direct measurements of clinical molybdenum X-ray spectra were carried out by using a pinhole collimator and a custom alignment device. A comparison with the attenuation curves and the half value layer values, obtained from the measured and simulated spectra, from an ionization chamber and from a solid state dosimeter, also shows the accuracy of the measurements. These results make the proposed detection system a very attractive tool for both laboratory research, calibration of dosimeters and advanced quality controls in mammography. PMID:22969406

  12. Possibility of gated silicon drift detector detecting hard x-ray

    NASA Astrophysics Data System (ADS)

    Matsuura, Hideharu; Fukushima, Shinya; Sakurai, Shungo; Ishikawa, Shohei; Takeshita, Akinobu; Hidaka, Atsuki

    2015-08-01

    One of the authors has proposed a simple-structure silicon X-ray detector (gated silicon drift detector: GSDD), whose structure is much simpler than commercial silicon drift detectors (SDDs). SDDs contain multiple built-in metal-oxide-semiconductor field-effect transistors (MOSFETs) or implanted resistors, whose fabrication processes lower the yield rate of detectors, and also require at least two high-voltage sources. On the other hand, GSDDs do not contain built-in MOSFETs or implanted resistors. Moreover, GSDDs require only one high-voltage source. Therefore, GSDDs greatly reduce the cost of the X-ray detection system. We fabricated prototype GSDDs that contained 0.625-mm-thick Si substrates with an active area of 18 mm2, operated by Peltier cooling and a single voltage source. Its energy resolution at 5.9 keV from an 55Fe source was 145 eV at -38°C and -90°V. Thicker Si substrates are required to enhance its absorption of X-rays. To detect X-ray photons with energies up to 77 keV for X-ray absorbance higher than 15%, we simulate the electric potential distribution in GSDDs with Si thicknesses from 0.625 to 3.0 mm. We obtain an adequate electric potential distribution in the thicknesses of up to 3.0 mm, and the capacitance of the GSDD remains small and its X-ray count rate remain high. The high reverse bias required in the 3-mm-thick GSDD was a third of that in a 3-mm-thick pin diode.

  13. Characterization of CdTe Films Deposited at Various Bath Temperatures and Concentrations Using Electrophoretic Deposition

    PubMed Central

    Daud, Mohd Norizam Md; Zakaria, Azmi; Jafari, Atefeh; Ghazali, Mohd Sabri Mohd; Abdullah, Wan Rafizah Wan; Zainal, Zulkarnain

    2012-01-01

    CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111) orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the CdTe film increased with the increase of CdTe concentration. The optical energy band gap of film decreased with the increase of CdTe concentration, and with the increase of isothermal bath temperature. The film thickness increased with respect to the increase of CdTe concentration and bath temperature, and following, the numerical expression for the film thickness with respect to these two variables has been established. PMID:22754325

  14. First-principles study of roles of Cu and Cl in polycrystalline CdTe

    DOE PAGES

    Yang, Ji -Hui; Yin, Wan -Jian; Park, Ji -Sang; Metzger, Wyatt; Wei, Su -Huai

    2016-01-25

    In this study, Cu and Cl treatments are important processes to achieve high efficiency polycrystalline cadmium telluride (CdTe) solar cells, thus it will be beneficial to understand the roles they play in both bulk CdTe and CdTe grain boundaries (GBs). Using first-principles calculations, we systematically study Cu and Cl-related defects in bulk CdTe. We find that Cl has only a limited effect on improving p-type doping and too much Cl can induce deep traps in bulk CdTe, whereas Cu can enhance ptype doping of bulk CdTe. In the presence of GBs, we find that, in general, Cl and Cu willmore » prefer to stay at GBs, especially for those with Te-Te wrong bonds, in agreement with experimental observations.« less

  15. Study of the initial stages of growth of CdTe on (001)GaAs

    NASA Astrophysics Data System (ADS)

    Mar, H. A.; Salansky, N.; Chee, K. T.

    1984-05-01

    The initial stages of growth of CdTe on (001) GaAs have been studied using Auger electron spectroscopy and reflection high-energy electron techniques. At the growth temperature of 225 °C tellurium atoms are observed to be adsorbed to a thickness of one to two monolayers on a thermally cleaned GaAs substrate. However, cadmium atoms are adsorbed only when tellurium atoms are present. An analysis of the Auger electron spectra and the reflection high-energy electron diffraction patterns taken at intervals during the initial growth of CdTe films from a CdTe compound source indicates that growth takes place first by the deposition of one to two monolayers of tellurium. This is followed by the nucleation and growth of CdTe crystallites which increase in size and coalesce to form a single crystal of CdTe with a (111) CdTe ∥ (001) GaAs orientation.

  16. Choice of Substrate Material for Epitaxial CdTe Solar Cells

    SciTech Connect

    Song, Tao; Kanevce, Ana; Sites, James R.

    2015-06-14

    Epitaxial CdTe with high quality, low defect density, and high carrier concentration should in principle yield high-efficiency photovoltaic devices. However, insufficient effort has been given to explore the choice of substrate for high-efficiency epitaxial CdTe solar cells. In this paper, we use numerical simulations to investigate three crystalline substrates: silicon (Si), InSb, and CdTe each substrate material are generally discussed.

  17. Imaging performance comparison between a LaBr{sub 3}:Ce scintillator based and a CdTe semiconductor based photon counting compact gamma camera

    SciTech Connect

    Russo, P.; Mettivier, G.; Pani, R.; Pellegrini, R.; Cinti, M. N.; Bennati, P.

    2009-04-15

    The authors report on the performance of two small field of view, compact gamma cameras working in single photon counting in planar imaging tests at 122 and 140 keV. The first camera is based on a LaBr{sub 3}:Ce scintillator continuous crystal (49x49x5 mm{sup 3}) assembled with a flat panel multianode photomultiplier tube with parallel readout. The second one belongs to the class of semiconductor hybrid pixel detectors, specifically, a CdTe pixel detector (14x14x1 mm{sup 3}) with 256x256 square pixels and a pitch of 55 {mu}m, read out by a CMOS single photon counting integrated circuit of the Medipix2 series. The scintillation camera was operated with selectable energy window while the CdTe camera was operated with a single low-energy detection threshold of about 20 keV, i.e., without energy discrimination. The detectors were coupled to pinhole or parallel-hole high-resolution collimators. The evaluation of their overall performance in basic imaging tasks is presented through measurements of their detection efficiency, intrinsic spatial resolution, noise, image SNR, and contrast recovery. The scintillation and CdTe cameras showed, respectively, detection efficiencies at 122 keV of 83% and 45%, intrinsic spatial resolutions of 0.9 mm and 75 {mu}m, and total background noises of 40.5 and 1.6 cps. Imaging tests with high-resolution parallel-hole and pinhole collimators are also reported.

  18. Suppressed blinking behavior of thioglycolic acid capped CdTe quantum dot by amine functionalization

    NASA Astrophysics Data System (ADS)

    Mandal, Abhijit; Tamai, Naoto

    2011-12-01

    Prepared water soluble thioglycolic acid capped CdTe quantum dots (QDs) were further surface functionalized by ethylene diamine (EDA). Amine functionalized CdTe QDs demonstrate enhanced luminescence intensity at ensemble measurements and suppressed luminescence intermittency behavior at the single molecule level. A clear decrease in the power law exponent for "on" time behavior is observed in amine modified CdTe QDs. Our results show that surface of CdTe QDs modified by EDA can lead to an important physical mechanism to enhance fluorescence intensity, reduce blinking, and increase photostability.

  19. Review of Photovoltaic Energy Production Using CdTe Thin-Film Modules: Extended Abstract Preprint

    SciTech Connect

    Gessert, T. A.

    2008-09-01

    CdTe has near-optimum bandgap, excellent deposition traits, and leads other technologies in commercial PV module production volume. Better understanding materials properties will accelerate deployment.

  20. On-orbit calibration status of the hard x-ray detector (HXD) onboard Suzaku

    NASA Astrophysics Data System (ADS)

    Nishino, S.; Fukazawa, Y.; Mizuno, T.; Takahashi, H.; Hayashi, K.; Hiragi, K.; Mizuno, M.; Yamada, S.; Kawaharada, M.; Kokubun, M.; Nakazawa, K.; Watanabe, S.; Tanaka, T.; Terada, Y.

    2010-07-01

    Hard X-ray Detector (HXD) onboard Suzaku, the Japanese 5th X-ray observatory, consists of 64 PIN photo diodes with 2 mm thickness (10-70 keV) and 16 phoswich detectors using 5 mm-thick GSO scintillators and BGO active collimators (40-600 keV), and these are surrounded by 20 units of BGO Active shields. All the detector units have been working well with no significant troubles in four and a half years since the launch on July 2005, and given many important scientific results. In this paper, we report the recent status of on-orbit calibrations for PIN/GSO detectors. For the PIN, analog/digital threshold levels of both in-orbit and on-ground are raised up to avoid the increasing noise events due to in-orbit radiation damage. For the GSO, the accuracy of the energy scale and modeling of gain variations are improved, and newly calibrated data set including background files and response matrices are released on April 2010.

  1. Effects of CdTe growth conditions and techniques on the efficiency limiting defects and mechanisms in CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Rohatgi, A.; Chou, H. C.; Jokerst, N. M.; Thomas, E. W.; Ferekides, C.; Kamra, S.; Feng, Z. C.; Dugan, K. M.

    1996-01-01

    CdTe solar cells were fabricated by depositing CdTe films on CdS/SnO2/glass substrates using close-spaced sublimation (CSS) and metalorganic chemical vapor deposition (MOCVD). Te/Cd mole ratio was varied in the range of 0.02 to 6 in the MOCVD growth ambient in an attempt to vary the native defect concentration. Polycrystalline CdTe layers grown by MOCVD and CSS both showed average grain size of about 2 μm. However, the CdTe films grown by CSS were found to be less faceted and more dense compared to the CdTe grown by MOCVD. CdTe growth techniques and conditions had a significant impact on the electrical characteristics of the cells. The CdTe solar cells grown by MOCVD in the Te-rich growth condition and by the CSS technique gave high cell efficiencies of 11.5% and 12.4%, respectively, compared to 6.6% efficient MOCVD cells grown in Cd-rich conditions. This large difference in efficiency is explained on the basis of (a) XRD measurements which showed a higher degree of atomic interdiffusion at the CdS/CdTe interface in high performance devices, (b) Raman measurements which endorsed more uniform and preferred grain orientation by revealing a sharp CdTe TO mode in the high efficiency cells, and (c) carrier transport mechanism which switched from tunneling/interface recombination to depletion region recombination in the high efficiency cells. In this study, Cu/Au layers were evaporated on CdTe for the back contact. Lower efficiency of the Te-rich MOCVD cells, compared to the CSS cells, was attributed to contact related additional loss mechanisms, such as Cd pile-up near Cu/CdTe interface which can give rise to Cd-vacancy defects in the bulk, and higher Cu concentration in the CdTe layer which can cause shunts in the device. Finally, SIMS measurements on the CdTe films of different crystallinity and grain size confirmed that grain boundaries are the main conduits for Cu migration into the CdTe film. Thus larger CdTe grain size or lower grain boundary area per unit volume

  2. Design and Performance of the Soft Gamma-ray Detector for the NeXT mission

    SciTech Connect

    Tajima, Hiroyasu; Kamae, T.; Madejski, G.; Mitani, T.; Nakazawa, K.; Tanaka, T.; Takahashi, T.; Watanabe, S.; Fukazawa, Y.; Ikagawa, T.; Kataoka, J.; Kokubun, M.; Makishima, K.; Terada, Y.; Nomachi, M.; Tashiro, M.; /SLAC /Sagamihara, Inst. Space Astron. Sci. /Tokyo U. /Hiroshima U. /Tokyo Inst. Tech. /Wako, RIKEN /Osaka U. /Saitama U.

    2006-04-19

    The Soft Gamma-ray Detector (SGD) on board the NeXT (Japanese future high energy astrophysics mission) is a Compton telescope with narrow field of view (FOV), which utilizes Compton kinematics to enhance its background rejection capabilities. It is realized as a hybrid semiconductor gamma-ray detector which consists of silicon and CdTe (cadmium telluride) detectors. It can detect photons in a wide energy band (0.05-1 MeV) at a background level of 5 x 10{sup -7} counts/s/cm{sup 2}/keV; the silicon layers are required to improve the performance at a lower energy band (<0.3 MeV). Excellent energy resolution is the key feature of the SGD, allowing it to achieve both high angular resolution and good background rejection capability. An additional capability of the SGD, its ability to measure gamma-ray polarization, opens up a new window to study properties of astronomical objects. We will present the development of key technologies to realize the SGD: high quality CdTe, low noise front-end ASIC and bump bonding technology. Energy resolutions of 1.7 keV (FWHM) for CdTe pixel detectors and 1.1 keV for Si strip detectors have been measured. We also present the validation of Monte Carlo simulation used to evaluate the performance of the SGD.

  3. Design and performance of soft gamma-ray detector for NeXT mission

    SciTech Connect

    Tajima, H.; Kamae, T.; Madejski, G.; Takahashi, T.; Nakazawa, K.; Watanabe, S.; Mitani, T.; Tanaka, T.; Fukazawa, Y.; Kataoka, J.; Ikagawa, T.; Kokubun, M.; Makishima, K.; Terada, Y.; Nomachi, M.; Tashiro, M.; /Saitama U.

    2005-05-04

    The Soft Gamma-ray Detector (SGD) on board NeXT (Japanese future high energy astrophysics mission) is a Compton telescope with narrow field of view, which utilizes Compton kinematics to enhance its background rejection capabilities. It is realized as a hybrid semiconductor gamma-ray detector which consists of silicon and Cadmium Telluride (CdTe) detectors. It can detect photons in an energy band 0.05-1 MeV at a background level of 5 x 10{sup -7} counts/s/cm{sup 2}/keV; the silicon layers are required to improve the performance at a lower energy band (<0.3 MeV). Excellent energy resolution is the key feature of the SGD to achieve both high angular resolution and good background rejection capability. Its ability to measure gamma-ray polarization opens up a new window to study gamma-ray emission in the universe. We will present the development of key technologies to realize the SGD; high quality CdTe, low noise front-end VLSI and bump bonding technology. Energy resolutions of 1.7 keV (FWHM) for CdTe pixel detectors and 1.1 keV for silicon strip detectors have been measured. We also present the validation of Monte Carlo simulation used to evaluate the performance of the SGD.

  4. Transmutation detectors

    NASA Astrophysics Data System (ADS)

    Viererbl, L.; Lahodová, Z.; Klupák, V.; Sus, F.; Kučera, J.; Kůs, P.; Marek, M.

    2011-03-01

    We have designed a new type of detectors, called transmutation detectors, which can be used primarily for neutron fluence measurement. The transmutation detector method differs from the commonly used activation detector method in evaluation of detector response after irradiation. Instead of radionuclide activity measurement using radiometric methods, the concentration of stable non-gaseous nuclides generated by transmutation in the detector is measured using analytical methods like mass spectrometry. Prospective elements and nuclear reactions for transmutation detectors are listed and initial experimental results are given. The transmutation detector method could be used primarily for long-term measurement of neutron fluence in fission nuclear reactors, but in principle it could be used for any type of radiation that can cause transmutation of nuclides in detectors. This method could also be used for measurement in accelerators or fusion reactors.

  5. The Effect of Twin Boundaries on the Spectroscopic Performance of CdZnTe Detectors

    NASA Technical Reports Server (NTRS)

    Parker, Bradford H.; Stahle, C. M.; Roth, D.; Babu, S.; Tueller, Jack; Powers, Edward I. (Technical Monitor)

    2001-01-01

    Most single grains in cadmium zinc telluride (CdZnTe) grown by the high-pressure Bridgman (HPB) technique contain multiple twin boundaries. As a consequence, twin boundaries are one of the most common macroscopic material defects found in large area (400 to 700 sq mm) CdZnTe specimens obtained from HPB ingots. Due to the prevalence of twin boundaries, understanding their effect on detector performance is key to the material selection process. Twin boundaries in several 2 mm thick large area specimens were first, documented using infrared transmission imaging. These specimens were then fabricated into either 2 mm pixel or planar detectors in order to examine the effect of the twin boundaries on detector performance. Preliminary results show that twin boundaries, which are decorated with tellurium inclusions, produce a reduction in detector efficiency and a degradation in resolution. The extent of the degradation appears to be a function of the density of tellurium inclusions.

  6. Response of CdZnTe Detectors on the Swift Burst Alert Telescope

    NASA Astrophysics Data System (ADS)

    Suzuki, M.; Tashiro, M.

    Swift (Gehrels, 2000) is the Gamma Ray Bursts (GRBs) explorer, that is scheduled for launch in 2004. The Swift's major instrument Burst Alert Telescope (BAT) detector array sits Cadmium Zinc Telluride (CdZnTe, CZT) semiconductor devices under a coded mask. The array has 32,768 individual Cd0.9Zn0.1Te1.0 detectors (4 × 4 mm^2 large, 2mm thick) that have a total detector area of 5240 cm^2. CdZnTe materials are able to operate at room temperature for its large band gap, and also have a high average atomic number which makes them sensitive to hard X-rays (15 ˜ 150 keV). We investigate energy response of the BAT detector for which to dedicate spectroscopy and imaging in observations of GRBs.

  7. Phosphorus Doping of Polycrystalline CdTe by Diffusion

    SciTech Connect

    Colegrove, Eric; Albin, David S.; Guthrey, Harvey; Harvey, Steve; Burst, James; Moutinho, Helio; Farrell, Stuart; Al-Jassim, Mowafak; Metzger, Wyatt K.

    2015-06-14

    Phosphorus diffusion in single crystal and polycrystalline CdTe material is explored using various methods. Dynamic secondary ion mass spectroscopy (SIMS) is used to determine 1D P diffusion profiles. A 2D diffusion model is used to determine the expected cross-sectional distribution of P in CdTe after diffusion anneals. Time of flight SIMS and cross-sectional cathodoluminescence corroborates expected P distributions. Devices fabricated with diffused P exhibit hole concentrations up to low 1015 cm-3, however a subsequent activation anneal enabled hole concentrations greater than 1016 cm-3. CdCl2 treatments and Cu based contacts were also explored in conjunction with the P doping process.

  8. DX centers in CdTe: a density functional study

    SciTech Connect

    Du, Mao-Hua

    2008-01-01

    DX centers induced by both group-III and group-VII donors in CdTe are studied using density functional calculations. The results show that, for group-VII donors, the DX centers with a cation-cation bond ({alpha}- and {beta}-CCB-DX centers) are more stable than the previously proposed broken-bond DX (BB-DX) center and the {beta}-CCB-DX center is the most stable. The stability trend found for the CCB-DX centers for different donors in CdTe is consistent with that for GaAs and GaSb, which suggests a general rule that the CCB-DX centers are favored for small donor atoms on anion site especially for semiconductors with large anion size.

  9. Dependence of CdTe response of bias history

    SciTech Connect

    Sites, J.R.; Sasala, R.A.; Eisgruber, I.L.

    1995-11-01

    Several time-dependent effect have been observed in CdTe cells and modules in recent years. Some appear to be related to degradation at the back contact, some to changes in temperature at the thin-film junction, and some to the bias history of the cell or module. Back-contact difficulties only occur in some cases, and the other two effects are reversible. Nevertheless, confusion in data interpretation can arise when these effects are not characterized. This confusion can be particularly acute when more than one time-dependent effect occurs during the same measurement cycle. The purpose of this presentation is to help categorize time-dependent effects in CdTe and other thin-film cells to elucidate those related to bias history, and to note differences between cell and module analysis.

  10. CdTe nanoparticles synthesized by laser ablation

    SciTech Connect

    Semaltianos, N. G.; Logothetidis, S.; Perrie, W.; Romani, S.; Potter, R. J.; Dearden, G.; Watkins, K. G.; Sharp, M.

    2009-07-20

    Nanoparticle generation by laser ablation of a solid target in a liquid environment is an easy, fast, and 'green' method for a large scale production of nanomaterials with tailored properties. In this letter we report the synthesis of CdTe nanoparticles by femtosecond laser [387 nm, 180 fs, 1 kHz, pulse energy=6 {mu}J (fluence=1.7 J/cm{sup 2})] ablation of the target material. Nanoparticles with diameters from {approx}2 up to {approx}25 nm were observed to be formed in the colloidal solution. Their size distribution follows the log-normal function with a statistical median diameter of {approx_equal}7.1 nm. Their crystal structure is the same as that of the bulk material (cubic zincblende) and they are slightly Cd-rich (Cd:Te percentage ratio {approx}1:0.9). Photoluminescence emission from the produced nanoparticles was detected in the deep red ({approx}652 nm)

  11. Optical modeling of graphene contacted CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Aldosari, Marouf; Sohrabpoor, Hamed; Gorji, Nima E.

    2016-04-01

    For the first time, an optical model is applied on CdS/CdTe thin film solar cells with graphene front or back contact. Graphene is highly conductive and is as thin as a single atom which reduces the light reflection and absorption, and thus enhances the light transmission to CdTe layer for a wide range of wavelengths including IR. Graphene as front electrode of CdTe devices led to loss in short circuit current density of 10% ΔJsc ≤ 15% compared to the conventional electrodes of TCO and ITO at CdS thickness of dCdS = 100 nm. In addition, all the multilayer graphene electrodes with 2, 4, and 7 graphene layers led to Jsc ≤ 20 mA/cm2. Therefore, we conclude that a single monolayer graphene with hexagonal carbon network reduces optical losses and enhances the carrier collection measured as Jsc. In another structure design, we applied the optical model to graphene back contacted CdS/CdTe device. This scheme allows double side irradiation of the cell which is expected to enhance the Jsc. We obtained 1 ∼ 6 , 23, and 38 mA/cm2 for back, front and bifacial illumination of graphene contacted CdTe cell with CdS = 100 nm. The bifacial irradiated cell, to be efficient, requires an ultrathin CdTe film with dCdTe ≤ 1 μm. In this case, the junction electric field extends to the back region and collects out the generated carriers efficiently. This was modelled by absorptivity rather than transmission rate and optical losses. Since the literature suggest that ZnO can increase the graphene conductivity and enhance the Jsc, we performed our simulations for a graphene/ZnO electrode (ZnO = 100 nm) instead of a single graphene layer.

  12. CdTe Feedstock Development and Validation: Cooperative Research and Development Final Report, CRADA Number CRD-08-00280

    SciTech Connect

    Albin, D.

    2011-05-01

    The goal of this work was to evaluate different CdTe feedstock formulations (feedstock provided by Redlen) to determine if they would significantly improve CdTe performance with ancillary benefits associated with whether changes in feedstock would affect CdTe cell processing and possibly reliability of cells. Feedstock also included attempts to intentionally dope the CdTe with pre-selected elements.

  13. Approaches to improve the Voc of CDTE devices: Device modeling and thinner devices, alternative back contacts

    NASA Astrophysics Data System (ADS)

    Walkons, Curtis J.

    An existing commercial process to develop thin film CdTe superstrate cells with a lifetime tau=1-3 ns results in Voc= 810-850 mV which is 350 mV lower than expected for CdTe with a bandgap EG = 1.5 eV. Voc is limited by 1.) SRH recombination in the space charge region; and 2.) the Cu2Te back contact to CdTe, which, assuming a 0.3 eV CdTe/Cu2Te barrier, exhibits a work function of phi Cu2Te= 5.5 eV compared to the CdTe valence band of Ev,CdTe=5.8 eV. Proposed solutions to develop CdTe devices with increased Voc are: 1.) reduce SRH recombination by thinning the CdTe layer to ≤ 1 mum; and 2.) develop an ohmic contact back contact using a material with phi BC≥5.8 eV. This is consistent with simulations using 1DSCAPS modeling of CdTe/CdS superstrate cells under AM 1.5 conditions. Two types of CdTe devices are presented. The first type of CdTe device utilizes a window/CdTe stack device with an initial 3-9 mum CdTe layer which is then chemically thinned resulting in regions of the CdTe film with thickness less than 1 mum. The CdTe surface was contacted with a liquid junction quinhydrone-Pt (QH-Pt) probe which enables rapid repeatable Voc measurements on CdTe before and after thinning. In four separate experiments, the window/CdTe stack devices with thinned CdTe exhibited a Voc increase of 30-170 mV, which if implemented using a solid state contact could cut the Voc deficit in half. The second type of CdTe device utilizes C61 PCBM as a back contact to the CdTe, selected since PCBM has a valence band maximum energy (VBM) of 5.8 eV. The PCBM films were grown by two different chemistries and the characterization of the film properties and device results are discussed. The device results show that PCBM exhibits a blocking contact with a 0.6 eV Schottky barrier and possible work function of phiPCBM = 5.2 eV.

  14. Single-Crystal CdTe Homojunction Structures for Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    Su, Peng-Yu; Dahal, Rajendra; Wang, Gwo-Ching; Zhang, Shengbai; Lu, Toh-Ming; Bhat, Ishwara B.

    2015-09-01

    We report two different CdTe homojunction solar cell structures. Single-crystal CdTe homojunction solar cells were grown on GaAs single-crystal substrates by metalorganic chemical vapor deposition. Arsenic and iodine were used as dopants for p-type and n-type CdTe, respectively. Another homojunction solar cell structure was fabricated by growing n-type CdTe directly on bulk p-type CdTe single-crystal substrates. The electrical properties of the different layers were characterized by Hall measurements. When arsine was used as arsenic source, the highest hole concentration was ~6 × 1016 cm-3 and the activation efficiency was ~3%. Very abrupt arsenic doping profiles were observed by secondary ion mass spectrometry. For n-type CdTe with a growth temperature of 250°C and a high Cd/Te ratio the electron concentration was ~4.5 × 1016 cm-3. Because of the 300 nm thick n-type CdTe layer, the short circuit current of the solar cell grown on the bulk CdTe substrate was less than 10 mA/cm2. The open circuit voltage of the device was 0.86 V. According to a prediction based on measurement of short circuit current density ( J sc) as a function of open circuit voltage ( V oc), an open circuit voltage of 0.92 V could be achieved by growing CdTe solar cells on bulk CdTe substrates.

  15. The High Energy Detector of Simbol-X

    SciTech Connect

    Meuris, A.; Limousin, O.; Blondel, C.; Le Mer, I.; Pinsard, F.; Cara, C.; Goetschy, A.; Martignac, J.; Laurent, P.; Chipaux, R.; Rio, Y.; Fontignie, J.; Horeau, B.; Ferrando, P.; Lugiez, F.; Gevin, O.; Tauzin, G.; Herve, S.; Authier, M.

    2009-05-11

    The High Energy Detector (HED) is one of the three detection units on board the Simbol-X detector spacecraft. It is placed below the Low Energy Detector so as to collect focused photons in the energy range from 8 to 80 keV. It consists of a mosaic of 64 independent cameras, divided in 8 sectors. Each elementary detection unit, called Caliste, is the hybridization of a 256-pixel Cadmium Telluride (CdTe) detector with full custom front-end electronics into a unique component. The status of the HED design will be reported. The promising results obtained from the first micro-camera prototypes called Caliste 64 and Caliste 256 will be presented to illustrate the expected performance of the instrument.

  16. Design of epitaxial CdTe solar cells on InSb substrates

    SciTech Connect

    Song, Tao; Kanevce, Ana; Sites, James R.

    2015-11-01

    Epitaxial CdTe has been shown by others to have a radiative recombination rate approaching unity, high carrier concentration, and low defect density. It has, therefore, become an attractive candidate for high-efficiency solar cells, perhaps becoming competitive with GaAs. The choice of substrate is a key design feature for epitaxial CdTe solar cells, and several possibilities (CdTe, Si, GaAs, and InSb) have been investigated by others. All have challenges, and these have generally been addressed through the addition of intermediate layers between the substrate and CdTe absorber. InSb is an attractive substrate choice for CdTe devices, because it has a close lattice match with CdTe, it has low resistivity, and it is easy to contact. However, the valence-band alignment between InSb and p-type CdTe, which can both impede hole current and enhance forward electron current, is not favorable. Three strategies to address the band-offset problem are investigated by numerical simulation: heavy doping of the back part of the CdTe layer, incorporation of an intermediate CdMgTe or CdZnTe layer, and the formation of an InSb tunnel junction. Lastly, wach of these strategies is predicted to be helpful for higher cell performance, but a combination of the first two should be most effective.

  17. Design of epitaxial CdTe solar cells on InSb substrates

    DOE PAGES

    Song, Tao; Kanevce, Ana; Sites, James R.

    2015-11-01

    Epitaxial CdTe has been shown by others to have a radiative recombination rate approaching unity, high carrier concentration, and low defect density. It has, therefore, become an attractive candidate for high-efficiency solar cells, perhaps becoming competitive with GaAs. The choice of substrate is a key design feature for epitaxial CdTe solar cells, and several possibilities (CdTe, Si, GaAs, and InSb) have been investigated by others. All have challenges, and these have generally been addressed through the addition of intermediate layers between the substrate and CdTe absorber. InSb is an attractive substrate choice for CdTe devices, because it has a closemore » lattice match with CdTe, it has low resistivity, and it is easy to contact. However, the valence-band alignment between InSb and p-type CdTe, which can both impede hole current and enhance forward electron current, is not favorable. Three strategies to address the band-offset problem are investigated by numerical simulation: heavy doping of the back part of the CdTe layer, incorporation of an intermediate CdMgTe or CdZnTe layer, and the formation of an InSb tunnel junction. Lastly, wach of these strategies is predicted to be helpful for higher cell performance, but a combination of the first two should be most effective.« less

  18. The 150 ns detector project: Prototype preamplifier results

    NASA Astrophysics Data System (ADS)

    Warburton, W. K.; Russell, S. R.; Kleinfelder, Stuart A.

    1994-08-01

    The long-term goal of the 150 ns detector project is to develop a pixel area detector capable of 6 MHz frame rates (150 ns/frame). Our milestones toward this goal are: a single pixel, 1×256 1D and 8×8 2D detectors, 256×256 2D detectors and, finally, 1024 × 1024 2D detectors. The design strategy is to supply a complete electronics chain (resetting preamp, selectable gain amplifier, analog-to-digital converter (ADC), and memory) for each pixel. In the final detectors these will all be custom integrated circuits. The front-end preamplifiers are integrated first, since their design and performance are the most unusual and also critical to the project's success. Similarly, our early work is concentrated on devising and perfecting detector structures. In this paper we demonstrate the performance of prototypes of our integrated preamplifiers. While the final design will have 64 preamps to a chip, including a switchable gain stage, the prototypes were integrated 8 channels to a "Tiny Chip" and tested in 4 configurations (feedback capacitor Cf equal 2.5 or 4.0 pF, output directly or through a source follower). These devices have been tested thoroughly for reset settling times, gain, linearity, and electronic noise. They generally work as designed, being fast enough to easily integrate detector charge, settle, and reset in 150 ns. Gain and linearity appear to be acceptable. Current values of electronic noise, in double-sampling mode, are about twice the design goal of {2}/{3} of a single photon at 6 keV. We expect this figure to improve with the addition of the onboard amplifier stage and improved packaging. Our next test chip will include these improvements and allow testing with our first detector samples, which will be 1×256 (50 μm wide pixels) and 8×8 (1 mm 2 pixels) element detector on 1 mm thick silicon.

  19. Growth of CdTe thin films on graphene by close-spaced sublimation method

    SciTech Connect

    Jung, Younghun; Yang, Gwangseok; Kim, Jihyun; Chun, Seungju; Kim, Donghwan

    2013-12-02

    CdTe thin films grown on bi-layer graphene were demonstrated by using the close-spaced sublimation method, where CdTe was selectively grown on the graphene. The density of the CdTe domains was increased with increasing the number of the defective sites in the graphene, which was controlled by the duration of UV exposure. The CdTe growth rate on the bi-layer graphene electrodes was 400 nm/min with a bandgap energy of 1.45–1.49 eV. Scanning electron microscopy, micro-Raman spectroscopy, micro-photoluminescence, and X-ray diffraction technique were used to confirm the high quality of the CdTe thin films grown on the graphene electrodes.

  20. Synthesis and characterization of high-ordered CdTe nanorods

    NASA Astrophysics Data System (ADS)

    Ma, Ligang; Wei, Zelu; Zhang, Fengming; Wu, Xiaoshan

    2015-12-01

    Cadmium telluride (CdTe) materials are an important absorbed layer and development solar energy conversion devices based on nano-fabrication techniques have attracted considerable interest in fabricating optoelectronic devices. Herein, through close-space sublimation method, vertically high-aligned CdTe nanorods are successfully obtained for the first time, with the help of Anodic Aluminum Oxide (AAO) template, which can perfectly control the morphology, diameter, and spacing among the CdTe nanorods. Its the crystal structure and optical properties are characterized by X-ray diffraction, X-ray photoelectron spectroscopy, Raman scattering, and photoluminescence. The results indicate that CdTe nanorods are textured polycrystalline with the cubic phase and bear good crystallinity. In addition, this deposition technique is a clean, inexpensive, high-throughput, versatile and reproducible for obtaining vertically aligned CdTe nanorod, which shows the potential applications in the future for the preparation of CdTe-based nanostructure solar cells.

  1. Molecular Dynamics Studies of Dislocations in CdTe Crystals from a New Bond Order Potential.

    PubMed

    Zhou, Xiaowang; Ward, Donald K; Wong, Bryan M; Doty, F Patrick; Zimmerman, Jonathan A

    2012-08-23

    Cd(1-x)Zn(x)Te (CZT) crystals are the leading semiconductors for radiation detection, but their application is limited by the high cost of detector-grade materials. High crystal costs primarily result from property nonuniformity that causes low manufacturing yield. Although tremendous efforts have been made in the past to reduce Te inclusions/precipitates in CZT, this has not resulted in an anticipated improvement in material property uniformity. Moreover, it is recognized that in addition to Te particles, dislocation cells can also cause electric field perturbations and the associated property nonuniformities. Further improvement of the material, therefore, requires that dislocations in CZT crystals be understood and controlled. Here, we use a recently developed CZT bond order potential to perform representative molecular dynamics simulations to study configurations, energies, and mobilities of 29 different types of possible dislocations in CdTe (i.e., x = 1) crystals. An efficient method to derive activation free energies and activation volumes of thermally activated dislocation motion will be explored. Our focus gives insight into understanding important dislocations in the material and gives guidance toward experimental efforts for improving dislocation network structures in CZT crystals.

  2. Influence of EDTA{sup 2-} on the hydrothermal synthesis of CdTe nanocrystallites

    SciTech Connect

    Gong Haibo; Hao Xiaopeng; Xu Xiangang

    2011-12-15

    Transformation from Te nanorods to CdTe nanoparticles was achieved with the assistance of EDTA as a ligand under hydrothermal conditions. Experimental results showed that at the beginning of reaction Te nucleated and grew into nanorods. With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Finally, nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were obtained. The effects of EDTA on the morphology and formation of CdTe nanoparticles were discussed in consideration of the strong ligand-effect of EDTA, which greatly decreased the concentration of Cd{sup 2+}. Furthermore, the possible formation process of CdTe nanoparticles from Te nanorods was further proposed. The crystal structure and morphology of the products were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). - Graphical Abstract: Firstly, Te nucleated and grew into nanorods in the presence of EDTA{sup 2-}. Then CdTe nucleus began to emerge on Te nanorods and finally monodispersed CdTe nanoparticles were obtained. Highlights: Black-Right-Pointing-Pointer EDTA serves as a strong ligand with Cd{sup 2+}. Black-Right-Pointing-Pointer The existence of EDTA constrains the nucleation of CdTe and promotes the formation of Te nanorods. Black-Right-Pointing-Pointer With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Black-Right-Pointing-Pointer Nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were finally obtained.

  3. Strip interpolation in silicon and germanium strip detectors.

    SciTech Connect

    Wulf, E. A.; Phlips, B. F.; Johnson, W. N.; Kurfess, J. D.; Lister, C. J.; Kondev, F.; Physics; Naval Research Lab.

    2004-01-01

    The position resolution of double-sided strip detectors is limited by the strip pitch and a reduction in strip pitch necessitates more electronics. Improved position resolution would improve the imaging capabilities of Compton telescopes and PET detectors. Digitizing the preamplifier waveform yields more information than can be extracted with regular shaping electronics. In addition to the energy, depth of interaction, and which strip was hit, the digitized preamplifier signals can locate the interaction position to less than the strip pitch of the detector by looking at induced signals in neighboring strips. This allows the position of the interaction to be interpolated in three dimensions and improve the imaging capabilities of the system. In a 2 mm thick silicon strip detector with a strip pitch of 0.891 mm, strip interpolation located the interaction of 356 keV gamma rays to 0.3 mm FWHM. In a 2 cm thick germanium detector with a strip pitch of 5 mm, strip interpolation of 356 keV gamma rays yielded a position resolution of 1.5 mm FWHM.

  4. The TORCH time-of-flight detector

    NASA Astrophysics Data System (ADS)

    Harnew, N.; Brook, N.; Castillo García, L.; Cussans, D.; Föhl, K.; Forty, R.; Frei, C.; Gao, R.; Gys, T.; Piedigrossi, D.; Rademacker, J.; Ros Garcia, A.; van Dijk, M.

    2016-07-01

    The TORCH time-of-flight detector is being developed to provide particle identification between 2 and 10 GeV/c momentum over a flight distance of 10 m. TORCH is designed for large-area coverage, up to 30 m2, and has a DIRC-like construction. The goal is to achieve a 15 ps time-of-flight resolution per incident particle by combining arrival times from multiple Cherenkov photons produced within quartz radiator plates of 10 mm thickness. A four-year R&D programme is underway with an industrial partner (Photek, UK) to produce 53×53 mm2 Micro-Channel Plate (MCP) detectors for the TORCH application. The MCP-PMT will provide a timing accuracy of 40 ps per photon and it will have a lifetime of up to at least 5 Ccm-2 of integrated anode charge by utilizing an Atomic Layer Deposition (ALD) coating. The MCP will be read out using charge division with customised electronics incorporating the NINO chipset. Laboratory results on prototype MCPs are presented. The construction of a prototype TORCH module and its simulated performance are also described.

  5. Development of a low-mass and high-efficiency charged-particle detector

    NASA Astrophysics Data System (ADS)

    Naito, D.; Maeda, Y.; Kawasaki, N.; Masuda, T.; Nanjo, H.; Nomura, T.; Sasaki, M.; Sasao, N.; Seki, S.; Shiomi, K.; Tajima, Y.

    2016-02-01

    We have developed a low-mass and high-efficiency charged-particle detector for an experimental study of the rare decay K_L rArr π ^0 ν bar {ν }. The detector is important for suppressing the background with charged particles to the level below the signal branching ratio predicted by the Standard Model (O(10^{-11})). The detector consists of two layers of 3 mm thick plastic scintillators with embedded wavelength-shifting fibers and multi-pixel photon counters for the readout. We manufactured the counter and evaluated the performance in terms of light yield, timing resolution, and efficiency. With this design, we achieved an inefficiency per layer against penetrating charged particles of less than 1.5 × 10^{-5}, which satisfies the requirement of the KOTO experiment determined from simulation studies.

  6. Smoke Detector

    NASA Technical Reports Server (NTRS)

    1979-01-01

    In the photo, Fire Chief Jay Stout of Safety Harbor, Florida, is explaining to young Richard Davis the workings of the Honeywell smoke and fire detector which probably saved Richard's life and that of his teen-age brother. Alerted by the detector's warning, the pair were able to escape their burning home. The detector in the Davis home was one of 1,500 installed in Safety Harbor residences in a cooperative program conducted by the city and Honeywell Inc.

  7. Degradation and capacitance: voltage hysteresis in CdTe devices

    NASA Astrophysics Data System (ADS)

    Albin, D. S.; Dhere, R. G.; Glynn, S. C.; del Cueto, J. A.; Metzger, W. K.

    2009-08-01

    CdS/CdTe photovoltaic solar cells were made on two different transparent conducting oxide (TCO) structures in order to identify differences in fabrication, performance, and reliability. In one set of cells, chemical vapor deposition (CVD) was used to deposit a bi-layer TCO on Corning 7059 borosilicate glass consisting of a F-doped, conductive tin-oxide (cSnO2) layer capped by an insulating (undoped), buffer (iSnO2) layer. In the other set, a more advanced bi-layer structure consisting of sputtered cadmium stannate (Cd2SnO4; CTO) as the conducting layer and zinc stannate (Zn2SnO4; ZTO) as the buffer layer was used. CTO/ZTO substrates yielded higher performance devices however performance uniformity was worse due to possible strain effects associated with TCO layer fabrication. Cells using the SnO2-based structure were only slightly lower in performance, but exhibited considerably greater performance uniformity. When subjected to accelerated lifetime testing (ALT) at 85 - 100 °C under 1-sun illumination and open-circuit bias, more degradation was observed in CdTe cells deposited on the CTO/ZTO substrates. Considerable C-V hysteresis, defined as the depletion width difference between reverse and forward direction scans, was observed in all Cu-doped CdTe cells. These same effects can also be observed in thin-film modules. Hysteresis was observed to increase with increasing stress and degradation. The mechanism for hysteresis is discussed in terms of both an ionic-drift model and one involving majority carrier emission in the space-charge region (SCR). The increased generation of hysteresis observed in CdTe cells deposited on CTO/ZTO substrates suggests potential decomposition of these latter oxides when subjected to stress testing.

  8. Study of tellurium precipitates in CdTe crystals

    NASA Technical Reports Server (NTRS)

    Jayatirtha, H. N.; Henderson, D. O.; Burger, A.; Volz, M. P.

    1993-01-01

    The effect of tellurium precipitates was studied in medium resistivity (10 exp 3-10 exp 6 ohm cm) undoped and Cl-doped CdTe using differential scanning calorimetry (DSC) and mid-infrared spectroscopy and the results were correlated with near-infrared microscopy photographs. When present in a significant quantity (about 0.25 wt pct), we show that Te precipitates are detectable using DSC measurements. In the mid-infrared, the contribution of the absorption by free-carriers is negligible, and therefore, the effect of the Te precipitates in these crystals can be considered uncoupled from the effects of Cd vacancies.

  9. High-Efficiency, Commercial Ready CdTe Solar Cells

    SciTech Connect

    Sites, James R.

    2015-11-19

    Colorado State’s F-PACE project explored several ways to increase the efficiency of CdTe solar cells and to better understand the device physics of those cells under study. Increases in voltage, current, and fill factor resulted in efficiencies above 17%. The three project tasks and additional studies are described in detail in the final report. Most cells studied were fabricated at Colorado State using an industry-compatible single-vacuum closed-space-sublimation (CSS) chamber for deposition of the key semiconductor layers. Additionally, some cells were supplied by First Solar for comparison purposes, and a small number of modules were supplied by Abound Solar.

  10. Growth kinetics of CdTe colloidal nanocrystals.

    PubMed

    Ferreira, D Lourençoni; Silva, F Oliveira; Viol, L Cristina de Souza; Licínio, P; Valadares, M; Cury, L Alberto; Schiavon, M Antônio; Alves, J Luiz Aarestrup

    2009-08-28

    The growth kinetics of CdTe colloidal nanocrystals has been analyzed quantitatively by means of dynamic light scattering and photoluminescence measurements. The growth rates, size distributions, critical radii, and diffusion constants have been calculated in the framework of the Sugimoto theoretical model. A two-step diffusion-controlled growth regime has been proposed for the reported synthesis and a set of relations for the time evolution of the size distribution has been derived and discussed in the sense of the size distribution focusing concept. PMID:19725626

  11. Raman characterization of a new Te-rich binary compound: CdTe2.

    PubMed

    Rousset, Jean; Rzepka, Edouard; Lincot, Daniel

    2009-04-01

    Structural characterization by Raman spectroscopy of CdTe thin films electrodeposited in acidic conditions is considered in this work. This study focuses on the evolution of material properties as a function of the applied potential and the film thickness, demonstrating the possibility to obtain a new Te-rich compound with a II/VI ratio of 1/2 under specific bath conditions. Raman measurements carried out on etched samples first allow the elimination of the assumption of a mixture of phases CdTe + Te and tend to confirm the formation of the CdTe(2) binary compound. The signature of this phase on the Raman spectrum is the increase of the LO band intensity compared to that obtained for the CdTe. The influence of the laser power is also considered. While no effect is observed on CdTe films, the increase of the incident irradiation power leads to the decomposition of the CdTe(2) compound into two more stable phases namely CdTe and Te.

  12. Nonstoichiometric composition shift in physical vapor deposition of CdTe thin films

    NASA Astrophysics Data System (ADS)

    Chin, Ken K.; Cheng, Zimeng; Delahoy, Alan E.

    2015-05-01

    While it is being debated whether Cd vacancy is an effective p-dopant in CdTe, and whether CdTe thin film in solar energy application should be Cd-deficient or Cd-rich, in the theory of CdTe physical vapor deposition (PVD) it has been assumed that both the source material and the thin film product is stoichiometric. To remediate the lack of effective theory, a new PVD model for CdTe photovoltaic (PV) modules is presented in this work, in which the composition of the CdTe thin film under growth is a parameter determined by the source CdTe composition as well as the growth condition. The solid phase Cd1-δTe1+δ compound under deposition temperature is treated as a solid solution with a mole of excess pure Te or Cd as solute and one mole of congruently grown CdTe as solvent. Assuming that the vapor pressure of Te2 can be calculated by using the law of solid solution PTe=H0+aH1+a2H2 round the congruent composition, where the molar number a and the constants H0, H1 and H2 as functions of temperature T are extracted from the experimental data. Thus, the mole fraction of solute in the grown CdTe thin film as well as the growth rate, as a function of the solute mole fraction in the source CdTe can be determined.

  13. Optical Detectors

    NASA Astrophysics Data System (ADS)

    Goushcha, Alexander; Tabbert, Bernd

    Optical detectors are applied in all fields of human activities - from basic research to commercial applications in communication, automotive, medical imaging, homeland security, and other fields. The processes of light interaction with matter described in other chapters of this handbook form the basis for understanding the optical detectors physics and device properties.

  14. Optical Detectors

    NASA Astrophysics Data System (ADS)

    Tabbert, Bernd; Goushcha, Alexander

    Optical detectors are applied in all fields of human activities from basic research to commercial applications in communication, automotive, medical imaging, homeland security, and other fields. The processes of light interaction with matter described in other chapters of this handbook form the basis for understanding the optical detectors physics and device properties.

  15. Cerenkov detector for heavy-ion velocity measurements

    SciTech Connect

    Olson, D.L.; Baumgartner, M.; Dufour, J.P.; Girard, J.G.; Greiner, D.E.; Lindstrom, P.J.; Symons, T.J.M.; Crawford, H.J.

    1984-08-01

    We have developed a highly sensitive velocity measuring detector using total-internal-reflection Cerenkov counters of a type mentioned by Jelly in 1958. If the velocity of the particle is above the threshold for total-internal-reflection these counters have a charge resolution of sigma = 0.18e for a 3mm thick glass radiator. For the velocity measurement we use a fused silica radiator so that the velocity of the particles are near the threshold for total-internal reflection. For momentum-analyzed projectile fragments of 1.6 GeV/nucleon /sup 40/Ar, we have measured a mass resolution of sigma = 0.1u for isotope identification.

  16. Deposition of Hydrogenated Microcrystalline Films of CdTe by Chemical Sputtering in Hydrogen

    NASA Astrophysics Data System (ADS)

    Saito, Koji; Nishibayashi, Yoshiki; Imura, Takeshi; Osaka, Yukio

    1988-07-01

    Films of CdTe are deposited by chemical sputtering of a CdTe target in hydrogen gas. X-ray diffraction patterns show that the films are composed of microcrystals of cubic CdTe with a grain size of 15˜30 nm. The films contain a trace amount of hydrogen in the form of the Cd-H (and presumably Te-H2) bonds. This hydrogen is evolved during the thermal treatment of the film above 100°C, as the grain size of the microcrystal grows. The deposition rate is also reduced when the substrate temperature increases up to 100°C or more.

  17. Thin-film CdTe and CuInSe{sub 2} photovoltaic technologies

    SciTech Connect

    Ullal, H S; Zweibel, K; von Roedern, B G

    1993-08-01

    Total-area conversion efficiency of 15%--15.8% have been achieved for thin-film CdTe and CIS solar cells. Modules with power output of 5--53 W have been demonstrated by several groups world-wide. Critical processes and reaction pathways for achieving excellent PV devices have been eluciated. Research, development and technical issues have been identified, which could result in potential improvements in device and module performance. A 1-kW thin-film CdTe array has been installed and is being tested. Multimegawatt thin-film CdTe manufacturing plants are expected to be completed in 1-2 years.

  18. Effect of low energy ion irradiation on CdTe crystals: Luminescence enhancement

    SciTech Connect

    Olvera, J.; Plaza, J. L.; Dios, S. de; Dieguez, E.; Martinez, O.; Avella, M.

    2010-12-15

    In this work we show that low energy ion sputtering is a very efficient technique as a cleaning process for CdTe substrates. We demonstrate, by using several techniques like grazing-angle x-ray diffraction, cathodoluminescence, microluminescence, and micro-Raman spectroscopy that the luminescent properties of CdTe substrates can be very much increased when CdTe surfaces are irradiated with low energy Argon ions. We postulate that this enhancement is mainly due to the removal of surface damage induced by the cutting and polishing processes. The formation of a low density of nonluminescent aggregates after the sputtering process has also been observed.

  19. Apparent quantum efficiency effects in CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Gloeckler, M.; Sites, J. R.

    2004-04-01

    Quantum efficiency measurements of n-CdS/p-CdTe solar cells performed under nonstandard illumination, voltage bias, or both can be severely distorted by photogeneration and contact-barrier effects. In this work we will discuss the effects that are typically observed, the requirements needed to reproduce these effects with modeling tools, and the potential applications of apparent quantum efficiency analysis. Recently published experimental results are interpreted and reproduced using numerical simulation tools. The suggested model explains large negative apparent quantum efficiencies (≫100%) seen in the spectral range of 350-550 nm, modestly large negative apparent quantum efficiencies (>100%) in the spectral range of 800-850 nm, enhanced positive or negative response observed under red, blue, and white light bias, and photocurrent gain significantly different from unity. Some of these effects originate from the photogeneration in the highly compensated CdS window layer, some from photogeneration within the CdTe, and some are further modified by the height of the CdTe back-contact barrier.

  20. Advanced CdTe Photovoltaic Technology: September 2007 - March 2009

    SciTech Connect

    Barth, K.

    2011-05-01

    During the last eighteen months, Abound Solar (formerly AVA Solar) has enjoyed significant success under the SAI program. During this time, a fully automated manufacturing line has been developed, fabricated and commissioned in Longmont, Colorado. The facility is fully integrated, converting glass and semiconductor materials into complete modules beneath its roof. At capacity, a glass panel will enter the factory every 10 seconds and emerge as a completed module two hours later. This facility is currently undergoing trials in preparation for large volume production of 120 x 60 cm thin film CdTe modules. Preceding the development of the large volume manufacturing capability, Abound Solar demonstrated long duration processing with excellent materials utilization for the manufacture of high efficiency 42 cm square modules. Abound Solar prototype modules have been measured with over 9% aperture area efficiency by NREL. Abound Solar demonstrated the ability to produce modules at industry leading low costs to NREL representatives. Costing models show manufacturing costs below $1/Watt and capital equipment costs below $1.50 per watt of annual manufacturing capacity. Under this SAI program, Abound Solar supported a significant research and development program at Colorado State University. The CSU team continues to make progress on device and materials analysis. Modeling for increased device performance and the effects of processing conditions on properties of CdTe PV were investigated.

  1. Single CdTe Nanowire Optical Correlator for Femtojoule Pulses.

    PubMed

    Xin, Chenguang; Yu, Shaoliang; Bao, Qingyang; Wu, Xiaoqin; Chen, Bigeng; Wang, Yipei; Xu, Yingxin; Yang, Zongyin; Tong, Limin

    2016-08-10

    On the basis of the transverse second harmonic generation (TSHG) in a highly nonlinear subwavelength-diameter CdTe nanowire, we demonstrate a single-nanowire optical correlator for femto-second pulse measurement with pulse energy down to femtojoule (fJ) level. Pulses to be measured were equally split and coupled into two ends of a suspending nanowire via tapered optical fibers. The couterpropagating pulses meet each other around the central area of the nanowire, and emit TSHG signal perpendicular to the axis of the nanowire. By transferring the spatial intensity profile of the transverse second harmonic (TSH) image into the time-domain temporal profile of the input pulses, we operate the nanowire as a miniaturized optical correlator. Benefitted from the high nonlinearity and the very small effective mode area of the waveguiding CdTe nanowire, the input energy of the single-nanowire correlator can go down to fJ-level (e.g., 2 fJ/pulse for 1064 nm 200 fs pulses). The miniature fJ-pulse correlator may find applications from low power on-chip optical communication, biophotonics to ultracompact laser spectroscopy. PMID:27414182

  2. Left Ventricular Aneurysm with 1- to 2-mm-Thick Myocardium

    PubMed Central

    Liotta, Domingo; Del Río, Miguel; Gallo, Amelia; Frank, Luis; Tamashiro, Alberto; Schneider, Raúl

    1990-01-01

    From January 1983 to July 1985, 64 patients underwent left ventricular aneurysmectomy in our surgical unit. In 11 (17%) of these cases, the lesion was a variant of the true aneurysm that included an extremely thin (1- to 2-mm), well-defined area of myocardium. In 9 of the cases, the aneurysm was confirmed preoperatively by means of high-quality ventriculography (high resolution and many hues of gray). Surgical and pathologic criteria established the lesion's clinical significance. To the best of our knowledge, these aneurysms constitute a heretofore undescribed variant of the classic true left ventricular aneurysm, exhibiting certain gross characteristics of the false left ventricular aneurysm and sharing with false aneurysms their greater risk of rupture. While it is impossible to tell whether these aneurysms are progressing toward rupture, we believe that all such lesions should undergo urgent repair in the presence of cardiac symptoms. Following aneurysmectomy, ventriculoplasty or septoplasty using an elliptical woven Dacron patch helps to preserve the internal contour and surface anatomy of the ventricle. In our series, this procedure resulted in early and late postoperative mortality figures comparable to those associated with the surgical treatment of classic true left ventricular aneurysms. (Texas Heart Institute Journal 1990;17:337-45) Images PMID:15227526

  3. 0.25mm-thick CCD packaging for the Dark Energy Survey Camera array

    SciTech Connect

    Derylo, Greg; Diehl, H.Thomas; Estrada, Juan; /Fermilab

    2006-06-01

    The Dark Energy Survey Camera focal plane array will consist of 62 2k x 4k CCDs with a pixel size of 15 microns and a silicon thickness of 250 microns for use at wavelengths between 400 and 1000 nm. Bare CCD die will be received from the Lawrence Berkeley National Laboratory (LBNL). At the Fermi National Accelerator Laboratory, the bare die will be packaged into a custom back-side-illuminated module design. Cold probe data from LBNL will be used to select the CCDs to be packaged. The module design utilizes an aluminum nitride readout board and spacer and an Invar foot. A module flatness of 3 microns over small (1 sqcm) areas and less than 10 microns over neighboring areas on a CCD are required for uniform images over the focal plane. A confocal chromatic inspection system is being developed to precisely measure flatness over a grid up to 300 x 300 mm. This system will be utilized to inspect not only room-temperature modules, but also cold individual modules and partial arrays through flat dewar windows.

  4. Gaseous Detectors

    NASA Astrophysics Data System (ADS)

    Titov, Maxim

    Since long time, the compelling scientific goals of future high-energy physics experiments were a driving factor in the development of advanced detector technologies. A true innovation in detector instrumentation concepts came in 1968, with the development of a fully parallel readout for a large array of sensing elements - the Multi-Wire Proportional Chamber (MWPC), which earned Georges Charpak a Nobel prize in physics in 1992. Since that time radiation detection and imaging with fast gaseous detectors, capable of economically covering large detection volumes with low mass budget, have been playing an important role in many fields of physics. Advances in photolithography and microprocessing techniques in the chip industry during the past decade triggered a major transition in the field of gas detectors from wire structures to Micro-Pattern Gas Detector (MPGD) concepts, revolutionizing cell-size limitations for many gas detector applications. The high radiation resistance and excellent spatial and time resolution make them an invaluable tool to confront future detector challenges at the next generation of colliders. The design of the new micro-pattern devices appears suitable for industrial production. Novel structures where MPGDs are directly coupled to the CMOS pixel readout represent an exciting field allowing timing and charge measurements as well as precise spatial information in 3D. Originally developed for the high-energy physics, MPGD applications have expanded to nuclear physics, photon detection, astroparticle and neutrino physics, neutron detection, and medical imaging.

  5. Development of a novel scintillation-trigger detector for the MTV experiment using aluminum-metallized film tapes

    NASA Astrophysics Data System (ADS)

    Tanaka, S.; Ozaki, S.; Sakamoto, Y.; Tanuma, R.; Yoshida, T.; Murata, J.

    2014-07-01

    A new type of a trigger-scintillation counter array designed for the MTV experiment at TRIUMF-ISAC has been developed, which uses aluminum-metallized film tape for wrapping to achieve the required assembling precision of ±0.5 mm. The MTV experiment uses a cylindrical drift chamber (CDC) as the main electron-tracking detector. The barrel-type trigger counter is placed inside the CDC to generate a trigger signal using 1 mm thick, 300 mm long thin plastic scintillation counters. Detection efficiency and light attenuation compared with conventional wrapping materials are studied.

  6. Dynamic Curvature and Stress Studies for MBE CdTe on Si and GaAs Substrates

    NASA Astrophysics Data System (ADS)

    Jacobs, R. N.; Jaime Vasquez, M.; Lennon, C. M.; Nozaki, C.; Almeida, L. A.; Pellegrino, J.; Arias, J.; Taylor, C.; Wissman, B.

    2015-09-01

    Infrared focal plane arrays (IRFPA) based on HgCdTe semiconductor alloys have been shown to be ideal for tactical and strategic applications. High density (>1 M pixel), high operability HgCdTe detectors on large area, low-cost composite substrates, such as CdTe-buffered Si or GaAs, are envisioned for next-generation IRFPAs. Thermal expansion mismatch is among various material parameters that govern the structural properties of the final detector layer. It has previously been shown that thermal expansion mismatch plays the dominant role in the residual stress characteristics of these heteroepitaxial structures (Jacobs et al. in J Electron Mater 37:1480, 2008). The wafer curvature (bowing) resulting from residual stress, is a likely source of problems that may occur during subsequent processing. This includes cracking of the film and substrate during post-growth annealing processes or even certain characterization techniques. In this work, we examine dynamic curvature and stress during molecular beam epitaxy (MBE), of CdTe on Si and GaAs substrates. The effect of temperature changes on wafer curvature throughout the growth sequence is documented using a multi-beam optical sensor developed by K-Space Associates. This monitoring technique makes possible the study of growth sequences which employ annealing schemes and/or interlayers to influence the final residual stress state of the heteroepitaxial structures.

  7. TraPET: High performance small animal PET with trapezoidal phoswich detector

    NASA Astrophysics Data System (ADS)

    Hyun Chung, Yong; Yeon Hwang, Ji; Baek, Cheol-Ha; Jung An, Su; Kim, Hyun-Il; Hyun Kim, Kwang

    2011-10-01

    In recent years, small-animal PET scanners with depth of interaction (DOI) capability have been developed for molecular imaging research. The aim of this study is to perform simulations to design a high performance small-animal PET, called TraPET. TraPET has an inner diameter of 76.21 mm with 6 dual-layer phoswich detector modules. Each module is composed of a 5.0-mm-thick trapezoidal-monolithic-LSO crystal with a front face (surface facing toward the inside of the scanner) of 44.0×44.0 mm 2 and a back face of 50.0×50.0 mm 2 and a 25×25 array of LuYAP crystals with a 2.0×2.0 mm 2 sensitive area with a 15.0 mm thickness. DOI information is extracted by a pulse shape discrimination method. The ability of event positioning in the trapezoidal-monolithic-LSO was evaluated by modeling the light distribution in the crystal using DETECT2000 and a 16×16 array of silicon photo-multipliers (SiPMs), with a 3.0 mm pixel size, selected as the photo-sensor. Also, the sensitivity and gap filling effect between modules were simulated using the Monte Carlo code, GATE. The new detector showed higher and more uniform sensitivity, as compared to scanners with rectangular-shaped detectors, because the trapezoidal-monolithic-LSO minimizes the dead space within the detector ring. In conclusion, our new detector proved to be a reliable design for small-animal PET with high spatial resolution by DOI information, and high sensitivity by high filling fraction.

  8. Atomic-force microscopy and photoluminescence of nanostructured CdTe

    SciTech Connect

    Babentsov, V.; Sizov, F.; Franc, J.; Luchenko, A.; Svezhentsova, E. Tsybrii, Z.

    2013-09-15

    Low-dimensional CdTe nanorods with a diameter of 10-30 nm and a high aspect ratio that reaches 100 are studied. The nanorods are grown by the physical vapor transport method with the use of Bi precipitates on the substrates. In addition, thin films of closely packed CdTe nanorods with the transverse dimensions {approx}(100-200) nm are grown. Atomic-force microscopy shows that the cross sections of all of the nanorods were hexagonally shaped. By photoluminescence measurements, the inference about the wurtzite structure of CdTe is supported, and the structural quality, electron-phonon coupling, and defects are analyzed. On the basis of recent ab initio calculations, the nature of defects responsible for the formation of deep levels in the CdTe layers and bulk crystals are analyzed.

  9. First-Principles Study of Back Contact Effects on CdTe Thin Film Solar Cells

    SciTech Connect

    Du, Mao-Hua

    2009-01-01

    Forming a chemically stable low-resistance back contact for CdTe thin-film solar cells is critically important to the cell performance. This paper reports theoretical study of the effects of the back-contact material, Sb{sub 2}Te{sub 3}, on the performance of the CdTe solar cells. First-principles calculations show that Sb impurities in p-type CdTe are donors and can diffuse with low diffusion barrier. There properties are clearly detrimental to the solar-cell performance. The Sb segregation into the grain boundaries may be required to explain the good efficiencies for the CdTe solar cells with Sb{sub 2}Te{sub 3} back contacts.

  10. Characterization of CdTe Nanoparticles Fabricated by Pulsed Electron Deposition Technique at Different Ablation Parameters

    SciTech Connect

    Jackson, E.; Aga, R. Jr.; Steigerwald, A.; Ueda, A.; Pan, Z.; Collins, W. E.; Mu, R.

    2008-03-13

    Telluride (CdTe) is a front-runner photovoltaic (PV) material because it has already attained efficiencies above 16%. The fabrication of CdTe nanoparticles has aroused considerable interest because of their potential application as active layer in organic/inorganic hybrid solar cells. They can also be used for sensitisation of wide band gap semiconductors. In this work, we explore pulsed electron beam deposition (PED) technique to fabricate CdTe nanoparticles. Two ablation parameters, namely background gas pressure and electron energy were varied to investigate their effects on the nanoparticle formation. AFM and optical transmission measurements indicate that we have fabricated CdTe nanocrystalline films exhibiting quantum confinement effect. These films contain scattered nanoparticles with diameters varying from 40 nm to 500 nm, which contribute to the optical absorption near the bulk bandgap energy. However, increasing the background pressure to 19 mTorr improves the nanocrystalline film uniformity.

  11. APT mass spectrometry and SEM data for CdTe solar cells

    DOE PAGES

    Li, Chen; Paudel, Naba R.; Yan, Yanfa; Pennycook, Stephen J.; Poplawsky, Jonathan D.; Guo, Wei

    2016-03-16

    Atom probe tomography (APT) data acquired from a CAMECA LEAP 4000 XHR for the CdS/CdTe interface for a non-CdCl2 treated CdTe solar cell as well as the mass spectrum of an APT data set including a GB in a CdCl2-treated CdTe solar cell are presented. Scanning electron microscopy (SEM) data showing the evolution of sample preparation for APT and scanning transmission electron microscopy (STEM) electron beam induced current (EBIC) are also presented. As a result, these data show mass spectrometry peak decomposition of Cu and Te within an APT dataset, the CdS/CdTe interface of an untreated CdTe solar cell, preparationmore » of APT needles from the CdS/CdTe interface in superstrate grown CdTe solar cells, and the preparation of a cross-sectional STEM EBIC sample.« less

  12. Semiconductor P-I-N detector

    DOEpatents

    Sudharsanan, Rengarajan; Karam, Nasser H.

    2001-01-01

    A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

  13. Growth and fabrication method of CdTe and its performance as a radiation detector

    NASA Astrophysics Data System (ADS)

    Park, Soojeong; Kim, Hyojin; Kim, Dojin

    2015-01-01

    We report the nitrogen-monoxide (NO) gas-sensing properties of transparent p-type copper-oxide (CuO) nanorod arrays synthesized by using the hydrothermal method with a CuO nanoparticle seed layer deposited on a glass substrate via sputtering process. We synthesized polycrystalline CuO nanorods measuring 200 to 300 nm in length and 20 to 30 nm in diameter for three controlled molarity ratios of 1:1, 1:2 and 1:4 between copper nitrate trihydrate [Cu(NO2)2·3H2O] and hexamethylenetetramine (C6H12N4). The crystal structures and morphologies of the synthesized CuO nanorod arrays were examined using grazing incidence X-ray diffraction and scanning electron microscopy. The gas-sensing measurements for NO gas in dry air indicated that the CuO nanorodarray-based gas sensors synthesized under hydrothermal condition at a molarity ratio of 1:2 showed the best gas sensing response to NO gas. These CuO nanorod-array gas sensors exhibited a highly sensitive response to NO gas, with a maximum sensitivity of about 650% for 10 ppm NO in dry air at an operating temperature of 100 ℃. These transparent p-type CuO nanorod-array gas sensors have shown a reversible and reliable response to NO gas over a range of operating temperatures. These results indicate certain potential use of p-type oxide semiconductor CuO nanorods as sensing materials for several types of gas sensors, including p — n junction gas sensors.

  14. MS Detectors

    SciTech Connect

    Koppenaal, David W.; Barinaga, Charles J.; Denton, M Bonner B.; Sperline, Roger P.; Hieftje, Gary M.; Schilling, G. D.; Andrade, Francisco J.; Barnes IV., James H.

    2005-11-01

    Good eyesight is often taken for granted, a situation that everyone appreciates once vision begins to fade with age. New eyeglasses or contact lenses are traditional ways to improve vision, but recent new technology, i.e. LASIK laser eye surgery, provides a new and exciting means for marked vision restoration and improvement. In mass spectrometry, detectors are the 'eyes' of the MS instrument. These 'eyes' have also been taken for granted. New detectors and new technologies are likewise needed to correct, improve, and extend ion detection and hence, our 'chemical vision'. The purpose of this report is to review and assess current MS detector technology and to provide a glimpse towards future detector technologies. It is hoped that the report will also serve to motivate interest, prompt ideas, and inspire new visions for ion detection research.

  15. Study of Cu-related Defect States in Single-crystal CdTe

    NASA Astrophysics Data System (ADS)

    Corwine, Caroline; Sites, James; Gessert, Timothy; Metzger, Wyatt; Dippo, Pat; Duda, Anna

    2003-10-01

    We have studied single-crystal CdTe using low-temperature photoluminescence (PL) in an effort to understand the effects of copper on the deep levels, as well as the effect of a bromine methanol (BrMe) etch on subsequent copper diffusion into CdTe. In present polycrystalline CdS/CdTe solar cell technology, the use of a back contact that contains Cu is necessary to produce high-efficiency cells. However, it is not generally understood why Cu is necessary for these devices to function well. In order to obtain further advances in the efficiencies of these solar cells, it is important to know how the back contact process may affect the defect states in CdTe. PL is one tool used to study defect states. However, before PL can be used effectively for polycrystalline CdTe solar cells, relevant spectral features first must be interpreted for single-crystal CdTe. All PL in this study was taken at 4.5 K. We report on PL peaks at 1.40 and 1.45 eV, which are seen only after Cu is diffused into single-crystal CdTe.

  16. Facile synthesis of straight and branched CdTe nanowires using CdO as precursor.

    PubMed

    Liu, Sheng; Yang, Chunyan; Zhang, Wen-Hua; Li, Can

    2011-12-01

    High-quality colloidal CdTe nanowires (NWs) containing both straight and branched ones were controllably prepared via a solution-based approach, using a low melting Bi nanoparticles as catalysts, CdO and tributylphosphine telluride (TBP-Te) as precursors, and a tri-n-octylphosphine oxide/tri-n-octylphosphine (TOPO/TOP) mixture as solvent. The resulting straight CdTe NWs have typical diameters below 20 nm accompanying with lengths exceeding 10 microm. In the case of branched CdTe NWs, tripod, V-shaped and y-shaped morphologies are obtained by decreasing the apparent Cd/Te molar ratio. It is found that, as the surface capping ligands, di-n-octylphosphinic acid (DOPA) is superior to decylphosphonic acid (DPA) in the reproducible growth of high-quality CdTe NWs. Since highly toxic dimethylcadmium, a cadmium precursor widely used in literatures, is replaced by CdO and the amount of the TOPO/TOP solvent mixture is significantly reduced, a relative safe and economical synthetic approach of high-quality colloidal CdTe NWs with controllable morphology is thus presented.

  17. In situ oxygen incorporation and related issues in CdTe /CdS photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Emziane, M.; Durose, K.; Halliday, D. P.; Bosio, A.; Romeo, N.

    2006-07-01

    CdTe /CdS/SnO2/ITO:F solar cell devices were investigated using quantitative secondary ion mass spectrometry (SIMS) depth profiling. They were grown on sapphire substrates and potentially active impurity species were analyzed. The SIMS data were calibrated for both CdS window layer (grown by sputtering) and CdTe absorber layer (deposited by close-space sublimation). For comparison, some of the samples were grown with and without oxygen incorporation into the CdTe layer during its deposition, and with and without postgrowth cadmium chloride (CdCl2) annealing in air and chemical etching. These devices were back contacted using Mo /Sb2Te3 sputtered layers. It was shown that for CdTe and CdS layers there was a correlation between the concentrations of oxygen and chlorine. In situ oxygen incorporation in the CdTe layer yielded a substantial improvement in the device parameters and achieved an efficiency of 14% compared to 11.5% for devices fabricated in the same conditions without oxygen incorporation in CdTe. In light of our previous reports, this study also led to a clear determination of the origin of Na and Si traces found in these devices.

  18. Oxygen Incorporation During Fabrication of Substrate CdTe Photovoltaic Devices: Preprint

    SciTech Connect

    Duenow, J. N.; Dhere, R. G.; Kuciauskas, D.; Li, J. V.; Pankow, J. W.; DeHart, C. M.; Gessert, T. A.

    2012-06-01

    Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower ({approx}6%-8%) than those of high-performance superstrate devices ({approx}17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.

  19. Glutathione-capped CdTe nanocrystals as probe for the determination of fenbendazole.

    PubMed

    Li, Qin; Tan, Xuanping; Li, Jin; Pan, Li; Liu, Xiaorong

    2015-04-15

    Water-soluble glutathione (GSH)-capped CdTe quantum dots (QDs) were synthesized. In pH 7.1 PBS buffer solution, the interaction between GSH-capped CdTe QDs and fenbendazole (FBZ) was investigated by spectroscopic methods, including fluorescence spectroscopy, ultraviolet-visible absorption spectroscopy, and resonance Rayleigh scattering (RRS) spectroscopy. In GSH-capped CdTe QDs solution, the addition of FBZ results in the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs. And the quenching intensity (enhanced RRS intensity) was proportional to the concentration of FBZ in a certain range. Investigation of the interaction mechanism, proved that the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs by FBZ is the result of electrostatic attraction. Based on the quenching of fluorescence (enhancement of RRS) of GSH-capped CdTe QDs by FBZ, a novel, simple, rapid and specific method for FBZ determination was proposed. The detection limit for FBZ was 42 ng mL(-1) (3.4 ng mL(-1)) and the quantitative determination range was 0-2.8 μg mL(-1) with a correlation of 0.9985 (0.9979). The method has been applied to detect FBZ in real simples and with satisfactory results.

  20. Glutathione-capped CdTe nanocrystals as probe for the determination of fenbendazole

    NASA Astrophysics Data System (ADS)

    Li, Qin; Tan, Xuanping; Li, Jin; Pan, Li; Liu, Xiaorong

    2015-04-01

    Water-soluble glutathione (GSH)-capped CdTe quantum dots (QDs) were synthesized. In pH 7.1 PBS buffer solution, the interaction between GSH-capped CdTe QDs and fenbendazole (FBZ) was investigated by spectroscopic methods, including fluorescence spectroscopy, ultraviolet-visible absorption spectroscopy, and resonance Rayleigh scattering (RRS) spectroscopy. In GSH-capped CdTe QDs solution, the addition of FBZ results in the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs. And the quenching intensity (enhanced RRS intensity) was proportional to the concentration of FBZ in a certain range. Investigation of the interaction mechanism, proved that the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs by FBZ is the result of electrostatic attraction. Based on the quenching of fluorescence (enhancement of RRS) of GSH-capped CdTe QDs by FBZ, a novel, simple, rapid and specific method for FBZ determination was proposed. The detection limit for FBZ was 42 ng mL-1 (3.4 ng mL-1) and the quantitative determination range was 0-2.8 μg mL-1 with a correlation of 0.9985 (0.9979). The method has been applied to detect FBZ in real simples and with satisfactory results.

  1. CdTe quantum dots as a novel biosensor for Serratia marcescens and Lipopolysaccharide.

    PubMed

    Ebrahim, Sh; Reda, M; Hussien, A; Zayed, D

    2015-01-01

    The main objective of this work is to synthesize CdTe quantum dots (QDs) conjugated with Concanavalin A (Con A) as a novel biosensor to be selective and specific for the detection of Lipopolysaccharide (LPS). In addition, the conjugated CdTe QDs-Con A was used as fluorescence labels to capture Serratia marcescens bacteria through the recognition between CdTe QDs-Con A and LPS of S. marcescens. The appearance of the lattice plans in the high resolution transmission electron photograph indicated a high crystalline with an average size of 4-5 nm for the CdTe QDs. The results showed that the relative fluorescence intensity of CdTe QDs-Con A decreased linearly with LPS concentration in the range from 10 to 90 fg/mL and with correlation coefficient (R(2)) equal to 0.9713. LPS surrounding the S. marcescens bacteria was bound to the CdTe QDs-Con A and leads to quenching of PL intensity. It was found that a good linear relationship between the relative PL intensity and the logarithmic of cell population of S. marcescens in range from 1×10 to 1×10(6) CFU/mL at pH 7 with R(2) of 0.952 was established.

  2. Properties of RF sputtered cadmium telluride (CdTe) thin films: Influence of deposition pressure

    NASA Astrophysics Data System (ADS)

    Kulkarni, R. R.; Pawbake, A. S.; Waykar, R. G.; Rondiya, S. R.; Jadhavar, A. A.; Pandharkar, S. M.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-01

    Influence of deposition pressure on structural, morphology, electrical and optical properties of CdTe thin films deposited at low substrate temperature (100°C) by RF magnetron sputtering was investigated. The formation of CdTe was confirmed by low angle XRD and Raman spectroscopy. The low angle XRD analysis revealed that the CdTe films have zinc blende (cubic) structure with crystallites having preferred orientation in (111) direction. Raman spectra show the longitudinal optical (LO) phonon mode peak ˜ 165.4 cm-1 suggesting high quality CdTe film were obtained over the entire range of deposition pressure studied. Scanning electron microscopy analysis showed that films are smooth, homogenous, and crack-free with no evidence of voids. The EDAX data revealed that CdTe films deposited at low deposition pressure are high-quality stoichiometric. However, for all deposition pressures, films are rich in Cd relative to Te. The UV-Visible spectroscopy analysis show the blue shift in absorption edge with increasing the deposition pressure while the band gap show decreasing trend. The highest electrical conductivity was obtained for the film deposited at deposition pressure 1 Pa which indicates that the optimized deposition pressure for our sputtering unit is 1 Pa. Based on the experimental results, these CdTe films can be useful for the application in the flexible solar cells and other opto-electronic devices.

  3. Epitaxial Growth of CdTe by H2 Sputtering

    NASA Astrophysics Data System (ADS)

    Nishibayashi, Yoshiki; Tokumitsu, Yoji; Saito, Koji; Imura, Takeshi; Osaka, Yukio

    1988-10-01

    CdTe films can be grown epitaxially on InSb(100) by chemical sputtering in H2. The crystalline quality of the epitaxial layers is improved when the substrate temperatures are in the range of 200 to 250°C at a high rf discharge power of 400 W. In channeling experiments employing Rutherford backscattering spectrometry, the χmin (aligned yield/random yield) in the film prepared at 270°C and 400 W is 9.5%. A lattice strain of 0.05% is obtained from the results of X-ray diffraction. These values show that the crystalline quality of the epitaxial film grown by H2 sputtering is superior to the film grown by Ar sputtering.

  4. Theoretical study of intrinsic defects in CdTe

    NASA Astrophysics Data System (ADS)

    Menéndez-Proupin, E.; Orellana, W.

    2016-05-01

    The quantum states and thermodynamical properties of the Cd and Te vacancies in CdTe are studied by first principles calculations. It is shown that the band structure of a cubic 64-atoms supercell with a Te vacancy is dramatically different from the band structure of the perfect crystal, suggesting that it cannot be used as model to calculate isolated defects. This flaw is solved modeling the Te vacancy within a cubic 216-atoms supercell. However, even with this large supercell, the 2— charge state relaxes to an incorrect distorted structure. This distortion is driven by partial filling of the conduction band induced by the k-point sampling. The correct structures and formation energies are obtained by relaxation with restriction of system symmetry, followed by band-filling correction to the energy, or by using a larger supercell that allows sampling the Brillouin zone with a single k-point.

  5. Photon detectors

    SciTech Connect

    Va`vra, J.

    1995-10-01

    J. Seguinot and T. Ypsilantis have recently described the theory and history of Ring Imaging Cherenkov (RICH) detectors. In this paper, I will expand on these excellent review papers, by covering the various photon detector designs in greater detail, and by including discussion of mistakes made, and detector problems encountered, along the way. Photon detectors are among the most difficult devices used in physics experiments, because they must achieve high efficiency for photon transport and for the detection of single photo-electrons. For gaseous devices, this requires the correct choice of gas gain in order to prevent breakdown and wire aging, together with the use of low noise electronics having the maximum possible amplification. In addition, the detector must be constructed of materials which resist corrosion due to photosensitive materials such as, the detector enclosure must be tightly sealed in order to prevent oxygen leaks, etc. The most critical step is the selection of the photocathode material. Typically, a choice must be made between a solid (CsI) or gaseous photocathode (TMAE, TEA). A conservative approach favors a gaseous photocathode, since it is continuously being replaced by flushing, and permits the photon detectors to be easily serviced (the air sensitive photocathode can be removed at any time). In addition, it can be argued that we now know how to handle TMAE, which, as is generally accepted, is the best photocathode material available as far as quantum efficiency is concerned. However, it is a very fragile molecule, and therefore its use may result in relatively fast wire aging. A possible alternative is TEA, which, in the early days, was rejected because it requires expensive CaF{sub 2} windows, which could be contaminated easily in the region of 8.3 eV and thus lose their UV transmission.

  6. A 1200 element detector system for synchrotron-based coronary angiography

    SciTech Connect

    Thompson, A.C.; Lavender, W.M.; Rubenstein, E.; Giacomini, J.C.; Rosso, V.; Schulze, C.; Chapman, D.; Thomlinson, W.

    1993-08-23

    A 1200 channel Si(Li) detector system has been developed for transvenous coronary angiography experiments using synchrotron radiation. It is part of the synchrotron medical imaging facility at the National Synchrotron Light Source. The detector is made from a single crystal of lithium-drifted silicon with an active area 150 mm long {times} 11 mm high {times} 5 mm thick. The elements are arranged in two parallel rows of 600 elements with a center-to-center spacing of 0.25 mm. All 1200 elements are read out simultaneously every 4 ms. A Intel 80486 based computer with a high speed digital signal processing interface is used to control the beamline hardware and to acquire a series of images. The signal-to-noise, linearity and resolution of the system have been measured. Human images have been taken with this system.

  7. Pyroelectric detectors

    NASA Technical Reports Server (NTRS)

    Haller, Eugene E.; Beeman, Jeffrey; Hansen, William L.; Hubbard, G. Scott; Mcmurray, Robert E., Jr.

    1990-01-01

    The multi-agency, long-term Global Change programs, and specifically NASA's Earth Observing system, will require some new and advanced photon detector technology which must be specifically tailored for long-term stability, broad spectral range, cooling constraints, and other parameters. Whereas MCT and GaAs alloy based photovoltaic detectors and detector arrays reach most impressive results to wavelengths as long as 12 microns when cooled to below 70 K, other materials, such as ferroelectrics and pyroelectrics, appear to offer special opportunities beyond 12 microns and above 70 K. These materials have found very broad use in a wide variety of room temperature applications. Little is known about these classes of materials at sub-room temperatures and no photon detector results have been reported. From the limited information available, researchers conclude that the room temperature values of D asterisk greater than or equal to 10(exp 9) cm Hz(exp 1/2)/W may be improved by one to two orders of magnitude upon cooling to temperatures around 70 K. Improvements of up to one order of magnitude appear feasible for temperatures achievable by passive cooling. The flat detector response over a wavelength range reaching from the visible to beyond 50 microns, which is an intrinsic advantage of bolometric devices, makes for easy calibration. The fact that these materials have been developed for reduced temperature applications makes ferro- and pyroelectric materials most attractive candidates for serious exploration.

  8. PHASE DETECTOR

    DOEpatents

    Kippenhan, D.O.

    1959-09-01

    A phase detector circuit is described for use at very high frequencies of the order of 50 megacycles. The detector circuit includes a pair of rectifiers inverted relative to each other. One voltage to be compared is applied to the two rectifiers in phase opposition and the other voltage to be compared is commonly applied to the two rectifiers. The two result:ng d-c voltages derived from the rectifiers are combined in phase opposition to produce a single d-c voltage having amplitude and polarity characteristics dependent upon the phase relation between the signals to be compared. Principal novelty resides in the employment of a half-wave transmission line to derive the phase opposing signals from the first voltage to be compared for application to the two rectifiers in place of the transformer commonly utilized for such purpose in phase detector circuits for operation at lower frequency.

  9. Hydrogen detector

    DOEpatents

    Kanegae, Naomichi; Ikemoto, Ichiro

    1980-01-01

    A hydrogen detector of the type in which the interior of the detector is partitioned by a metal membrane into a fluid section and a vacuum section. Two units of the metal membrane are provided and vacuum pipes are provided independently in connection to the respective units of the metal membrane. One of the vacuum pipes is connected to a vacuum gauge for static equilibrium operation while the other vacuum pipe is connected to an ion pump or a set of an ion pump and a vacuum gauge both designed for dynamic equilibrium operation.

  10. Microwave detector

    DOEpatents

    Meldner, Heiner W.; Cusson, Ronald Y.; Johnson, Ray M.

    1986-01-01

    A microwave detector (10) is provided for measuring the envelope shape of a microwave pulse comprised of high-frequency oscillations. A biased ferrite (26, 28) produces a magnetization field flux that links a B-dot loop (16, 20). The magnetic field of the microwave pulse participates in the formation of the magnetization field flux. High-frequency insensitive means (18, 22) are provided for measuring electric voltage or current induced in the B-dot loop. The recorded output of the detector is proportional to the time derivative of the square of the envelope shape of the microwave pulse.

  11. Microwave detector

    DOEpatents

    Meldner, H.W.; Cusson, R.Y.; Johnson, R.M.

    1985-02-08

    A microwave detector is provided for measuring the envelope shape of a microwave pulse comprised of high-frequency oscillations. A biased ferrite produces a magnetization field flux that links a B-dot loop. The magnetic field of the microwave pulse participates in the formation of the magnetization field flux. High-frequency insensitive means are provided for measuring electric voltage or current induced in the B-dot loop. The recorded output of the detector is proportional to the time derivative of the square of the envelope shape of the microwave pulse.

  12. Silicon Detectors

    NASA Astrophysics Data System (ADS)

    Sadrozinski, Hartmut

    2014-03-01

    The use of silicon detectors has experienced an exponential growth in accelerator and space based experiments, similar to trends in the semiconductor industry as a whole, usually paraphrased as ``Moore's Law.'' Some of the essentials for this phenomenon will be presented, together with examples of the exciting science results which it enabled. With the establishment of a ``semiconductor culture'' in universities and laboratories around the world, an increased understanding of the sensors results in thinner, faster, more radiation-resistant detectors, spawning an amazing wealth of new technologies and applications, which will be the main subject of the presentation.

  13. Microwave detector

    SciTech Connect

    Meldner, H.W.; Cusson, R.Y.; Johnson, R.M.

    1986-12-02

    A detector is described for measuring the envelope shape of a microwave pulse comprised of high-frequency oscillations, the detector comprising: a B-dot loop linking the magnetic field of the microwave pulse; a biased ferrite, that produces a magnetization field flux that links the B-dot loop. The ferrite is positioned within the B-dot loop so that the magnetic field of the microwave pulse interacts with the ferrite and thereby participates in the formation of the magnetization field flux; and high-frequency insensitive means for measuring electric voltage or current induced in the B-dot loop.

  14. FOXSI: Properties of optics and detectors for hard-X rays

    NASA Astrophysics Data System (ADS)

    Camilo Buitrago-Casas, Juan; Glesener, Lindsay; Christe, Steven; Krucker, Sam; Ishikawa, Shin-nosuke; Foster, Natalie

    2015-04-01

    The Focusing Optics X-ray Solar Imager (FOXSI) is a state-of-the-art direct focusing X-ray telescope designed to observe the Sun. This experiment completed its second flight onboard a sounding rocket last December 11, 2014 from the White Sands Missile Range in New Mexico. The optics use a set of iridium-coated nickel/cobalt mirrors made using a replication technique based on an electroformed perfect polished surface. Since this technique creates full shells that no need to be co-aligned with other segments, an angular resolution of up to ~5 arcsec is gotten. The FOXSI focal plane consists of seven double-sided strip detectors. Five Silicon and 2 CdTe detectors were used during the second flight.We present on various properties of Wolter-I optics that are applicable to solar HXR observation, including ray-tracing simulations of the single-bounce (“ghost ray”) patterns from sources outside the field of view and angular resolution for different source angles and effective area measurements of the FOXSI optics. We also present the detectors calibration results, paying attention to energy resolution (~0.5 keV), energy thresholds (~4-15 keV for Silicon and ~4-20 keV for CdTe detectors), and spatial coherence of these values over the entire detector.

  15. Fabrication of an Absorber-Coupled MKID Detector

    NASA Technical Reports Server (NTRS)

    Brown, Ari; Hsieh, Wen-Ting; Moseley, Samuel; Stevenson, Thomas; U-Yen, Kongpop; Wollack, Edward

    2012-01-01

    Absorber-coupled microwave kinetic inductance detector (MKID) arrays were developed for submillimeter and far-infrared astronomy. These sensors comprise arrays of lambda/2 stepped microwave impedance resonators patterned on a 1.5-mm-thick silicon membrane, which is optimized for optical coupling. The detector elements are supported on a 380-mm-thick micro-machined silicon wafer. The resonators consist of parallel plate aluminum transmission lines coupled to low-impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The transmission lines simultaneously act to absorb optical power and employ an appropriate surface impedance and effective filling fraction. The fabrication techniques demonstrate high-fabrication yield of MKID arrays on large, single-crystal membranes and sub-micron front-to-back alignment of the micro strip circuit. An MKID is a detector that operates upon the principle that a superconducting material s kinetic inductance and surface resistance will change in response to being exposed to radiation with a power density sufficient to break its Cooper pairs. When integrated as part of a resonant circuit, the change in surface impedance will result in a shift in its resonance frequency and a decrease of its quality factor. In this approach, incident power creates quasiparticles inside a superconducting resonator, which is configured to match the impedance of free space in order to absorb the radiation being detected. For this reason MKIDs are attractive for use in large-format focal plane arrays, because they are easily multiplexed in the frequency domain and their fabrication is straightforward. The fabrication process can be summarized in seven steps: (1) Alignment marks are lithographically patterned and etched all the way through a silicon on insulator (SOI) wafer, which consists of a

  16. van der Waals epitaxy of CdTe thin film on graphene

    NASA Astrophysics Data System (ADS)

    Mohanty, Dibyajyoti; Xie, Weiyu; Wang, Yiping; Lu, Zonghuan; Shi, Jian; Zhang, Shengbai; Wang, Gwo-Ching; Lu, Toh-Ming; Bhat, Ishwara B.

    2016-10-01

    van der Waals epitaxy (vdWE) facilitates the epitaxial growth of materials having a large lattice mismatch with the substrate. Although vdWE of two-dimensional (2D) materials on 2D materials have been extensively studied, the vdWE for three-dimensional (3D) materials on 2D substrates remains a challenge. It is perceived that a 2D substrate passes little information to dictate the 3D growth. In this article, we demonstrated the vdWE growth of the CdTe(111) thin film on a graphene buffered SiO2/Si substrate using metalorganic chemical vapor deposition technique, despite a 46% large lattice mismatch between CdTe and graphene and a symmetry change from cubic to hexagonal. Our CdTe films produce a very narrow X-ray rocking curve, and the X-ray pole figure analysis showed 12 CdTe (111) peaks at a chi angle of 70°. This was attributed to two sets of parallel epitaxy of CdTe on graphene with a 30° relative orientation giving rise to a 12-fold symmetry in the pole figure. First-principles calculations reveal that, despite the relatively small energy differences, the graphene buffer layer does pass epitaxial information to CdTe as the parallel epitaxy, obtained in the experiment, is energetically favored. The work paves a way for the growth of high quality CdTe film on a large area as well as on the amorphous substrates.

  17. PIXSCAN: Pixel detector CT-scanner for small animal imaging

    NASA Astrophysics Data System (ADS)

    Delpierre, P.; Debarbieux, F.; Basolo, S.; Berar, J. F.; Bonissent, A.; Boudet, N.; Breugnon, P.; Caillot, B.; Cassol Brunner, F.; Chantepie, B.; Clemens, J. C.; Dinkespiler, B.; Khouri, R.; Koudobine, I.; Mararazzo, V.; Meessen, C.; Menouni, M.; Morel, C.; Mouget, C.; Pangaud, P.; Peyrin, F.; Rougon, G.; Sappey-Marinier, D.; Valton, S.; Vigeolas, E.

    2007-02-01

    The PIXSCAN is a small animal CT-scanner based on hybrid pixel detectors. These detectors provide very large dynamic range of photons counting at very low detector noise. They also provide high counting rates with fast image readout. Detection efficiency can be optimized by selecting the sensor medium according to the working energy range. Indeed, the use of CdTe allows a detection efficiency of 100% up to 50 keV. Altogether these characteristics are expected to improve the contrast of the CT-scanner, especially for soft tissues, and to reduce both the scan duration and the absorbed dose. A proof of principle has been performed by assembling into a PIXSCAN-XPAD2 prototype the photon counting pixel detector initially built for detection of X-ray synchrotron radiations. Despite the relatively large pixel size of this detector (330×330 μm 2), we can present three-dimensional tomographic reconstruction of mice at good contrast and spatial resolution. A new photon counting chip (XPAD3) is designed in sub-micronique technology to achieve 130×130 μm 2 pixels. This improved circuit has been equipped with an energy selection circuit to act as a band-pass emission filter. Furthermore, the PIXSCAN-XPAD3 hybrid pixel detectors will be combined with the Lausanne ClearPET scanner demonstrator. CT image reconstruction in this non-conventional geometry is under study for this purpose.

  18. Vertex detectors

    SciTech Connect

    Lueth, V.

    1992-07-01

    The purpose of a vertex detector is to measure position and angles of charged particle tracks to sufficient precision so as to be able to separate tracks originating from decay vertices from those produced at the interaction vertex. Such measurements are interesting because they permit the detection of weakly decaying particles with lifetimes down to 10{sup {minus}13} s, among them the {tau} lepton and charm and beauty hadrons. These two lectures are intended to introduce the reader to the different techniques for the detection of secondary vertices that have been developed over the past decades. The first lecture includes a brief introduction to the methods used to detect secondary vertices and to estimate particle lifetimes. It describes the traditional technologies, based on photographic recording in emulsions and on film of bubble chambers, and introduces fast electronic registration of signals derived from scintillating fibers, drift chambers and gaseous micro-strip chambers. The second lecture is devoted to solid state detectors. It begins with a brief introduction into semiconductor devices, and then describes the application of large arrays of strip and pixel diodes for charged particle tracking. These lectures can only serve as an introduction the topic of vertex detectors. Time and space do not allow for an in-depth coverage of many of the interesting aspects of vertex detector design and operation.

  19. Monte Carlo Simulations of Background Spectra in Integral Imager Detectors

    NASA Technical Reports Server (NTRS)

    Armstrong, T. W.; Colborn, B. L.; Dietz, K. L.; Ramsey, B. D.; Weisskopf, M. C.

    1998-01-01

    Predictions of the expected gamma-ray backgrounds in the ISGRI (CdTe) and PiCsIT (Csl) detectors on INTEGRAL due to cosmic-ray interactions and the diffuse gamma-ray background have been made using a coupled set of Monte Carlo radiation transport codes (HETC, FLUKA, EGS4, and MORSE) and a detailed, 3-D mass model of the spacecraft and detector assemblies. The simulations include both the prompt background component from induced hadronic and electromagnetic cascades and the delayed component due to emissions from induced radioactivity. Background spectra have been obtained with and without the use of active (BGO) shielding and charged particle rejection to evaluate the effectiveness of anticoincidence counting on background rejection.

  20. The evolution of scintillating medical detectors

    NASA Astrophysics Data System (ADS)

    Hell, E.; Knüpfer, W.; Mattern, D.

    2000-11-01

    The principle of scintillation detectors has been among the first realizations of radiation detectors. Despite ongoing attempts to switch to direct converting detectors, scintillators have shown great persistence in the field of medical imaging. In radiography, computer tomography and nuclear medicine, a variety of scintillating devices are the 'workhorses' of the clinician today. For radiography, flat X-ray detectors (FDs) with evaporated scintillation layers are at the level of product introduction. However, X-ray image intensifier tubes (XIIs) are competitive and still have features that will be hard to beat in the near future. Although XIIs have disadvantages, they have experienced a significant evolution in robust image quality and cost reduction over the decades. The so-called 'offline' detectors from film to storage phosphors seemed to have reached a plateau since the late 1970s. However, the distinction between on- and offline may soften in the future, because of new readout concepts. Detectors in computer tomography (CT) have evolved from scintillators to gaseous direct converters back to scintillators. Extreme timing requirements and detector modularity have ruled out designs that would rank as `high performance' in other fields. Modern ultra-fast ceramic scintillation detectors are a prerequisite of subsecond CT and leave breathing room for future scan times even below 0.5 s. The field of nuclear medicine is a good example of how difficult it is, to replace a cheap and reliable technology. Since many years, direct converters like CdTe and the likes are discussed to overthrow the regime of NaI:Tl in combination with photomultipliers (PMTs). Both components are well known since the 1950s and have shown remarkable staying power. Still the scintillator with the highest light output, NaI:Tl in combination with the basically noiseless PMT is almost unbeatable in low cost. In combination with modern digital electronics, drawbacks of analog circuitry like

  1. Photodegradation of Mercaptopropionic Acid- and Thioglycollic Acid-Capped CdTe Quantum Dots in Buffer Solutions.

    PubMed

    Miao, Yanping; Yang, Ping; Zhao, Jie; Du, Yingying; He, Haiyan; Liu, Yunshi

    2015-06-01

    CdTe quantum dots (QDs) were synthesized by 3-mercaptopropionic acid (MPA) and thioglycollic acid (TGA) as capping agents. It is confirmed that TGA and MPA molecules were attached on the surface of the QDs using Fourier transform infrared (FT-IR) spectra. The movement of the QDs in agarose gel electrophoresis indicated that MPA-capped CdTe QDs had small hydrodynamic diameter. The photoluminescence (PL) intensity of TGA-capped QDs is higher than that of MPA-capped QDs at same QD concentration because of the surface passivation of TGA. To systemically investigate the photodegradation, CdTe QDs with various PL peak wavelengths were dispersed in phosphate buffered saline (PBS) and Tris-borate-ethylenediaminetetraacetic acid (TBE) buffer solutions. It was found that the PL intensity of the QDs in PBS decreased with time. The PL peak wavelengths of the QDs in PBS solutions remained unchanged. As for TGA-capped CdTe QDs, the results of PL peak wavelengths in TBE buffer solutions indicated that S(2-) released by TGA attached to Cd(2+) and formed CdS-like clusters layer on the surface of aqueous CdTe QDs. In addition, the number of TGA on the CdTe QDs surface was more than that of MPA. When the QDs were added to buffer solutions, agents were removed from the surface of CdTe QDs, which decreased the passivation of agents thus resulted in photodegradation of CdTe QDs in buffer solutions.

  2. {CdTe(111) B}/{Si(100) } structure grown by metalorganic vapor phase epitaxy with Te adsorption and annealing

    NASA Astrophysics Data System (ADS)

    Nishino, Hironori; Nishijima, Yoshito

    1996-10-01

    We studied the crystal structure of CdTe(111)B layers directly grown on Si(100) by MOVPE using a new pre-growth process, which includes a metalorganic Te adsorption and an annealing process. In this paper, we discussed the CdTe structure from the three aspects of antiphase, twinning and tilt. We investigated the dependence of the antiphase content in CdTe(111)B on the anneal temperature and the Si misorientation angle. From the results, we assume that the origin of the antiphase formation is the difference in the arrangement of adsorbed Te atoms. Te arrangement leading to antiphase formation occurs on Si terraces away from steps at relatively low temperatures. We reduced most of the twinning in epilayers by optimizing the {VI}/{II} ratio. We think the remaining twinning was confined to near the interface and it nucleated from the Te arrangement on terraces. We found that the Si(100)-CdTe(111) tilt was much smaller than that expected from the well-known Nagai model. We propose that a negative tilt is induced to reduce the lateral mismatch. To adjust the lateral distance of unit cells, 30 CdTe lattices match to 31 Si lattices. CdTe(111)B planes are inclined to reduce the remaining mismatch between two lattices. This initial tilt also causes wider CdTe terraces. We modified Nagai's tilting model for this reconstructed CdTe surface. The total tilt angle is defined by these two tilting mechanisms.

  3. Emitter/absorber interface of CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Song, Tao; Kanevce, Ana; Sites, James R.

    2016-06-01

    The performance of CdTe solar cells can be very sensitive to the emitter/absorber interface, especially for high-efficiency cells with high bulk lifetime. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e., defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV ≤ ΔEC ≤ 0.3 eV) can help maintain good cell efficiency in spite of high interface defect density, much like with Cu(In,Ga)Se2 (CIGS) cells. The basic principle is that positive ΔEC, often referred to as a "spike," creates an absorber inversion and hence a large hole barrier adjacent to the interface. As a result, the electron-hole recombination is suppressed due to an insufficient hole supply at the interface. A large spike (ΔEC ≥ 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a "cliff" (ΔEC < 0 eV) allows high hole concentration in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. Another way to mitigate performance losses due to interface defects is to use a thin and highly doped emitter, which can invert the absorber and form a large hole barrier at the interface. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. The ΔEC of other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ΔEC. These materials are predicted to yield higher voltages and would therefore be

  4. Optical and electrical properties of hydrothermally prepared CdTe nanowires

    NASA Astrophysics Data System (ADS)

    Hadia, N. M. A.; Awad, M. A.; Mohamed, S. H.; Ibrahim, E. M. M.

    2016-10-01

    The hydrothermal process was used to synthesize CdTe nanowires (NWs). Various analytical techniques were used to characterize the obtained NWs. The wire diameters were in the range 35-60 nm, and the lengths were >5 μm. The CdTe NWs had zinc-blende crystal structure. The NWs had high uniformity and high yield. FTIR analysis revealed the presence of the characteristic vibrational spectra of oxygen and hydrogen bounded to Cd and Te in CdTe NWs. The optical band gap value was 2.09 eV. The CdTe NWs showed a strong red emission band centered around 620.3 nm. The conductivity measurements were carried out in the temperature range 300-500 K and in air atmosphere. Two types of conduction mechanisms were observed with activation energies of 0.27 and 0.17 eV at high and low temperature regions, respectively. These results validate the potential of CdTe NWs for optoelectronic applications.

  5. BSA activated CdTe quantum dot nanosensor for antimony ion detection.

    PubMed

    Ge, Shenguang; Zhang, Congcong; Zhu, Yuanna; Yu, Jinghua; Zhang, Shuangshuang

    2010-01-01

    A novel fluorescent nanosensor for Sb(3+) determination was reported based on thioglycolic acid (TGA)-capped CdTe quantum dot (QD) nanoparticles. It was the first antimony ion sensor using QD nanoparticles in a receptor-fluorophore system. The water-soluable TGA-capped CdTe QDs were prepared through a hydrothermal route, NaHTe was used as the Te precursor for CdTe QDs synthesis. Bovine serum albumin (BSA) conjugated to TGA-capped CdTe via an amide link interacting with carboxyl of the TGA-capped CdTe. When antimony ion enters the BSA, the lone pair electrons of the nitrogen and oxygen atom become involved in the coordination, switching off the QD emission and a dramatic quenching of the fluorescence intensity results, allowing the detection of low concentrations of antimony ions. Using the operating principle, the antimony ion sensor based on QD nanoparticles showed a very good linearity in the range 0.10-22.0 microg L(-1), with the detection limit lower than 2.94 x 10(-8) g L(-1) and the relative standard deviation (RSD) 2.54% (n = 6). In a study of interferences, the antimony-sensitive TGA-QD-BSA sensor showed good selectivity. Therefore, a simple, fast, sensitive, and highly selective assay for antimony has been built. The presented method has been applied successfully to the determination of antimony in real water samples (n = 6) with satisfactory results.

  6. Optimizing ZnS/6LiF scintillators for wavelength-shifting-fiber neutron detectors

    SciTech Connect

    Crow, Lowell; Funk, Loren L; Hannan, Bruce W; Hodges, Jason P; Riedel, Richard A; Wang, Cai-Lin

    2016-01-01

    In this paper we compare the performance of grooved and flat ZnS/6LiF scintillators in a wavelength shifting-fiber (WLSF) detector. Flat ZnS/6LiF scintillators with the thickness L=0.2-0.8 mm were characterized using photon counting and pulse-height analysis and compared to a grooved scintillator of approximately 0.8 mm thick. While a grooved scintillator considerably increases the apparent thickness of the scintillator to neutrons for a given coating thickness, we find that the flat scintillators perform better than the grooved scintillators in terms of both light yield and neutron detection efficiency. The flat 0.8-mm-thick scintillator has the highest light output, and it is 52% higher compared with a grooved scintillator of same thickness. The lower light output of the grooved scintillator as compared to the flat scintillator is consistent with the greater scintillator-WLSF separation and the much larger average emission angle of the grooved scintillator. We also find that the average light cone width, or photon travel-length as measured using time-of-flight powder diffraction of diamond and vanadium, decreases with increasing L in the range of L=0.6-0.8 mm. This result contrasts with the traditional Swank diffusion model for micro-composite scintillators, and could be explained by a decrease in photon diffusion-coefficient or an increase in micro-particle content in the flat scintillator matrix for the thicker scintillators.

  7. Simulation study comparing high-purity germanium and cadmium zinc telluride detectors for breast imaging.

    PubMed

    Campbell, D L; Peterson, T E

    2014-11-21

    We conducted simulations to compare the potential imaging performance for breast cancer detection with High-Purity Germanium (HPGe) and Cadmium Zinc Telluride (CZT) systems with 1% and 3.8% energy resolution at 140 keV, respectively. Using the Monte Carlo N-Particle (MCNP5) simulation package, we modelled both 5 mm-thick CZT and 10 mm-thick HPGe detectors with the same parallel-hole collimator for the imaging of a breast/torso phantom. Simulated energy spectra were generated, and planar images were created for various energy windows around the 140 keV photopeak. Relative sensitivity and scatter and the torso fractions were calculated along with tumour contrast and signal-to-noise ratios (SNR). Simulations showed that utilizing a ±1.25% energy window with an HPGe system better suppressed torso background and small-angle scattered photons than a comparable CZT system using a -5%/+10% energy window. Both systems provided statistically similar contrast and SNR, with HPGe providing higher relative sensitivity. Lowering the counts of HPGe images to match CZT count density still yielded equivalent contrast between HPGe and CZT. Thus, an HPGe system may provide equivalent breast imaging capability at lower injected radioactivity levels when acquiring for equal imaging time.

  8. Simulation study comparing high-purity germanium and cadmium zinc telluride detectors for breast imaging

    PubMed Central

    Campbell, DL; Peterson, TE

    2014-01-01

    We conducted simulations to compare the potential imaging performance for breast cancer detection with High-Purity Germanium (HPGe) and Cadmium Zinc Telluride (CZT) systems with 1% and 3.8% energy resolution at 140 keV, respectively. Using the Monte Carlo N-Particle (MCNP5) simulation package, we modelled both 5 mm-thick CZT and 10 mm-thick HPGe detectors with the same parallel-hole collimator for the imaging of a breast/torso phantom. Simulated energy spectra were generated, and planar images were created for various energy windows around the 140-keV photopeak. Relative sensitivity and scatter and the torso fractions were calculated along with tumour contrast and signal-to-noise ratios (SNR). Simulations showed that utilizing a ±1.25% energy window with an HPGe system better suppressed torso background and small-angle scattered photons than a comparable CZT system using a −5%/+10% energy window. Both systems provided statistically similar contrast and SNR, with HPGe providing higher relative sensitivity. Lowering the counts of HPGe images to match CZT count density still yielded equivalent contrast between HPGe and CZT. Thus, an HPGe system may provide equivalent breast imaging capability at lower injected radioactivity levels when acquiring for equal imaging time. PMID:25360792

  9. Neutron detector

    DOEpatents

    Stephan, Andrew C.; Jardret; Vincent D.

    2011-04-05

    A neutron detector has a volume of neutron moderating material and a plurality of individual neutron sensing elements dispersed at selected locations throughout the moderator, and particularly arranged so that some of the detecting elements are closer to the surface of the moderator assembly and others are more deeply embedded. The arrangement captures some thermalized neutrons that might otherwise be scattered away from a single, centrally located detector element. Different geometrical arrangements may be used while preserving its fundamental characteristics. Different types of neutron sensing elements may be used, which may operate on any of a number of physical principles to perform the function of sensing a neutron, either by a capture or a scattering reaction, and converting that reaction to a detectable signal. High detection efficiency, an ability to acquire spectral information, and directional sensitivity may be obtained.

  10. Neutron detector

    SciTech Connect

    Stephan, Andrew C; Jardret, Vincent D

    2009-04-07

    A neutron detector has a volume of neutron moderating material and a plurality of individual neutron sensing elements dispersed at selected locations throughout the moderator, and particularly arranged so that some of the detecting elements are closer to the surface of the moderator assembly and others are more deeply embedded. The arrangement captures some thermalized neutrons that might otherwise be scattered away from a single, centrally located detector element. Different geometrical arrangements may be used while preserving its fundamental characteristics. Different types of neutron sensing elements may be used, which may operate on any of a number of physical principles to perform the function of sensing a neutron, either by a capture or a scattering reaction, and converting that reaction to a detectable signal. High detection efficiency, an ability to acquire spectral information, and directional sensitivity may be obtained.

  11. Angle detector

    NASA Technical Reports Server (NTRS)

    Parra, G. T. (Inventor)

    1978-01-01

    An angle detector for determining a transducer's angular disposition to a capacitive pickup element is described. The transducer comprises a pendulum mounted inductive element moving past the capacitive pickup element. The capacitive pickup element divides the inductive element into two parts L sub 1 and L sub 2 which form the arms of one side of an a-c bridge. Two networks R sub 1 and R sub 2 having a plurality of binary weighted resistors and an equal number of digitally controlled switches for removing resistors from the networks form the arms of the other side of the a-c bridge. A binary counter, controlled by a phase detector, balances the bridge by adjusting the resistance of R sub 1 and R sub 2. The binary output of the counter is representative of the angle.

  12. Flame Detector

    NASA Technical Reports Server (NTRS)

    1990-01-01

    Scientific Instruments, Inc. has now developed a second generation, commercially available instrument to detect flames in hazardous environments, typically refineries, chemical plants and offshore drilling platforms. The Model 74000 detector incorporates a sensing circuit that detects UV radiation in a 100 degree conical field of view extending as far as 250 feet from the instrument. It operates in a bandwidth that makes it virtually 'blind' to solar radiation while affording extremely high sensitivity to ultraviolet flame detection. A 'windowing' technique accurately discriminates between background UV radiation and ultraviolet emitted from an actual flame, hence the user is assured of no false alarms. Model 7410CP is a combination controller and annunciator panel designed to monitor and control as many as 24 flame detectors. *Model 74000 is no longer being manufactured.

  13. Neutrino Detectors

    NASA Astrophysics Data System (ADS)

    von Feilitzsch, Franz; Lanfranchi, Jean-Côme; Wurm, Michael

    The neutrino was postulated by Wolfgang Pauli in the early 1930s, but could only be detected for the first time in the 1950s. Ever since scientists all around the world have worked on the detection and understanding of this particle which so scarcely interacts with matter. Depending on the origin and nature of the neutrino, various types of experiments have been developed and operated. In this entry, we will review neutrino detectors in terms of neutrino energy and associated detection technique as well as the scientific outcome of some selected examples. After a brief historical introduction, the detection of low-energy neutrinos originating from nuclear reactors or from the Earth is used to illustrate the principles and difficulties which are encountered in detecting neutrinos. In the context of solar neutrino spectroscopy, where the neutrino is used as a probe for astrophysics, three different types of neutrino detectors are presented - water Čerenkov, radiochemical, and liquid-scintillator detectors. Moving to higher neutrino energies, we discuss neutrinos produced by astrophysical sources and from accelerators. The entry concludes with an overview of a selection of future neutrino experiments and their scientific goals.

  14. Effects of Detector Thickness on Geometric Sensitivity and Event Positioning Errors in the Rectangular PET/X Scanner

    PubMed Central

    MacDonald, Lawrence R.; Hunter, William C. J.; Kinahan, Paul E.; Miyaoka, Robert S.

    2015-01-01

    We used simulations to investigate the relationship between sensitivity and spatial resolution as a function of crystal thickness in a rectangular PET scanner intended for quantitative assessment of breast cancers. The system had two 20 × 15-cm2 and two 10 × 15-cm2 flat detectors forming a box, with the larger detectors separated by 4 or 8 cm. Depth-of-interaction (DOI) resolution was modeled as a function of crystal thickness based on prior measurements. Spatial resolution was evaluated independent of image reconstruction by deriving and validating a surrogate metric from list-mode data (dFWHM). When increasing crystal thickness from 5 to 40 mm, and without using DOI information, the dFWHM for a centered point source increased from 0.72 to 1.6 mm. Including DOI information improved dFWHM by 12% and 27% for 5- and 40-mm-thick crystals, respectively. For a point source in the corner of the FOV, use of DOI information improved dFWHM by 20% (5-mm crystal) and 44% (40-mm crystal). Sensitivity was 7.7% for 10-mm-thick crystals (8-cm object). Increasing crystal thickness on the smaller side detectors from 10 to 20 mm (keeping 10-mm crystals on the larger detectors) boosted sensitivity by 24% (relative) and degraded dFWHM by only ~3%/8% with/without DOI information. The benefits of measuring DOI must be evaluated in terms of the intended clinical task of assessing tracer uptake in small lesions. Increasing crystal thickness on the smaller side detectors provides substantial sensitivity increase with minimal accompanying loss in resolution. PMID:26160982

  15. Methods to extract more light from minute scintillation crystals used in an ultra-high resolution positron emission tomography detector

    NASA Astrophysics Data System (ADS)

    Levin, Craig S.; Habte, Frezghi; Foudray, Angela M.

    2004-07-01

    Recently, there has been great interest in developing finely pixellated position-sensitive scintillation detectors for ultra-high-resolution Positron Emission Tomography (PET) systems designed for breast cancer detection, diagnosis, and staging and for imaging small laboratory animals. We are developing a different high-resolution PET detector design that promotes nearly complete scintillation light collection in ⩽1 mm wide, >10 mm thick lutetium oxyorthosilicate (LSO) crystals. The design requires the use of semiconductor photodetector arrays in novel configurations that significantly improve the light collection aspect ratio for minute crystals. To reduce design complexity and dead area we are investigating the use of 1 mm thick sheets of LSO in addition to discrete crystal rods, and the use of position-sensitive avalanche photodiodes (PSAPDs) which require only four readout channels per device, in addition to pixellated APD arrays. Using a 1 mm thick scintillation crystal sheet coupled to a finely pixellated APD array results in a pseudo-discrete response to flood irradiation: due to a very narrow light spread function in the thin sheet we observe sharp (<1 mm wide) peaks in sensitivity centered at the APD pixel locations in a very linear fashion all the way out to the crystal edge. We measured an energy resolution of 13.7% FWHM at 511 keV for a 1 mm LSO crystal coupled to two APD pixels. Using a 1 mm thick crystal sheet coupled to a PSAPD the response to flood and edge-on irradiation with a 22Na point source shows a compressed dynamic range compared to that observed with discrete crystals or direct X-ray irradiation. With a discrete LSO crystal array the flood response is peaked at the crystal location where light is focused onto one spot on the PSAPD. We observed strong pin-cushioning effects in all PSAPD measurements. All LSO-PSAPD configurations studied had high aspect ratio for light collection and achieved energy resolutions ⩽12% FWHM at 511 keV.

  16. Enhanced fluorescence from CdTe quantum dots self-assembled on the surface of silver nanoparticles.

    PubMed

    An, L M; Yang, Y Q; Su, W H; Yi, J; Liu, C X; Chao, K F; Zeng, Q H

    2010-03-01

    This paper presents an investigation on the fluorescent properties of semiconductor CdTe quantum dots (QDs) self-assembled on the surface of PVP (polyvinylpyrrolidone)-capped silver nanoparticles (NPs) by the ligand field effect. A significant 2.5-fold enhancement in the integrated fluorescence intensities, red shift of fluorescence peak, and obvious decrease of lifetime were observed in the CdTe QDs assembled on the Ag NPs in comparison with the pure CdTe QDs. The fluorescence enhancement factor and red shift were found to depend on the Ag NP concentration. The fluorescence enhancement was attributed to a highly localized electromagnetic field on the Ag NPs generated by the surface plasma and the change in the surface trap state of the CdTe QDs originating from plasma oscillations in the Ag NPs. It is first proposed that the surface passivation of CdTe QDs is also an important factor for metal-enhanced fluorescence. The surface defects of CdTe QDs can be modified by the Cd-O coordination interaction between the CdTe QDs and PVP molecules, which will cause the trap state density and luminescence lifetime to decrease. The surface passivation of CdTe QDs can also improve fluorescence quantum yield and lead to the red shift of the fluorescence peak. Compared with previous reports, the occurrence of the self-assembly of CdTe QDs on the surface of PVP-capped Ag NPs is fairly simple and easy. From a practical point of view, the combination of CdTe QDs with Ag NPs may lead to the fluorescence enhancement, which could be utilized in a variety of chemical and biological detection applications. PMID:20355634

  17. Quantitative model of EBIC for CdTe

    NASA Astrophysics Data System (ADS)

    Haney, Paul; Yoon, Heayoung; Koirala, Prakash; Collins, Robert; Zhitenev, Nikolai

    2015-03-01

    Electron beam induced current (EBIC) is a powerful characterization technique which offers the high spatial resolution needed to study polycrystalline solar cells. In an EBIC experiment, a beam of high energy electrons excites electron-hole pairs, some fraction of which are collected by contacts. Ideally, an EBIC measurement reflects the spatially resolved quantum efficiency of the device. However, experiments on polycrystalline CdTe solar cells reveal that the EBIC collection efficiency is substantially lower than the quantum efficiency of the device under optical excitation. In order to reliably extract intrinsic material properties from EBIC signals, this difference must be reconciled. Two important differences between an EBIC experiment and normal device operation are: 1. the high generation rate density associated with the electron beam, and 2. the substantial effect of the exposed surface in an EBIC experiment. By developing numerical and analytical models which account for both of these effects, the difference in the material response under EBIC and normal device operation conditions can be understood. Comparison between the model and experiment show good agreement between quantities such as maximum EBIC collection efficiency versus charge generation rate.

  18. Structural and AC conductivity study of CdTe nanomaterials

    NASA Astrophysics Data System (ADS)

    Das, Sayantani; Banerjee, Sourish; Sinha, T. P.

    2016-04-01

    Cadmium telluride (CdTe) nanomaterials have been synthesized by soft chemical route using mercapto ethanol as a capping agent. Crystallization temperature of the sample is investigated using differential scanning calorimeter. X-ray diffraction and transmission electron microscope measurements show that the prepared sample belongs to cubic structure with the average particle size of 20 nm. Impedance spectroscopy is applied to investigate the dielectric relaxation of the sample in a temperature range from 313 to 593 K and in a frequency range from 42 Hz to 1.1 MHz. The complex impedance plane plot has been analyzed by an equivalent circuit consisting of two serially connected R-CPE units, each containing a resistance (R) and a constant phase element (CPE). Dielectric relaxation peaks are observed in the imaginary parts of the spectra. The frequency dependence of real and imaginary parts of dielectric permittivity is analyzed using modified Cole-Cole equation. The temperature dependence relaxation time is found to obey the Arrhenius law having activation energy ~0.704 eV. The frequency dependent conductivity spectra are found to follow the power law. The frequency dependence ac conductivity is analyzed by power law.

  19. Recombination by grain-boundary type in CdTe

    SciTech Connect

    Moseley, John Ahrenkiel, Richard K.; Metzger, Wyatt K.; Moutinho, Helio R.; Guthrey, Harvey L.; Al-Jassim, Mowafak M.; Paudel, Naba; Yan, Yanfa

    2015-07-14

    We conducted cathodoluminescence (CL) spectrum imaging and electron backscatter diffraction on the same microscopic areas of CdTe thin films to correlate grain-boundary (GB) recombination by GB “type.” We examined misorientation-based GB types, including coincident site lattice (CSL) Σ = 3, other-CSL (Σ = 5–49), and general GBs (Σ > 49), which make up ∼47%–48%, ∼6%–8%, and ∼44%–47%, respectively, of the GB length at the film back surfaces. Statistically averaged CL total intensities were calculated for each GB type from sample sizes of ≥97 GBs per type and were compared to the average grain-interior CL intensity. We find that only ∼16%–18% of Σ = 3 GBs are active non-radiative recombination centers. In contrast, all other-CSL and general GBs are observed to be strong non-radiative centers and, interestingly, these GB types have about the same CL intensity. Both as-deposited and CdCl{sub 2}-treated films were studied. The CdCl{sub 2} treatment reduces non-radiative recombination at both other-CSL and general GBs, but GBs are still recombination centers after the CdCl{sub 2} treatment.

  20. CZT detectors used in different irradiation geometries: Simulations and experimental results

    SciTech Connect

    Fritz, Shannon G.; Shikhaliev, Polad M.

    2009-04-15

    The purpose of this work was to evaluate potential advantages and limitations of CZT detectors used in surface-on, edge-on, and tilted angle irradiation geometries. Simulations and experimental investigations of the energy spectrum measured by a CZT detector have been performed using different irradiation geometries of the CZT. Experiments were performed using a CZT detector with 10x10 mm{sup 2} size and 3 mm thickness. The detector was irradiated with collimated photon beams from Am-241 (59.5 keV) and Co-57 (122 keV). The edge-scan method was used to measure the detector response function in edge-on illumination mode. The tilted angle mode was investigated with the radiation beam directed to the detector surface at angles of 90 degree sign , 15 degree sign , and 10 degree sign . The Hecht formalism was used to simulate theoretical energy spectra. The parameters used for simulations were matched to experiment to compare experimental and theoretical results. The tilted angle CZT detector suppressed the tailing of the spectrum and provided an increase in peak-to-total ratio from 38% at 90 degree sign to 83% at 10 degree sign tilt angle for 122 keV radiation. The corresponding increase for 59 keV radiation was from 60% at 90 degree sign to 85% at 10 degree sign tilt angle. The edge-on CZT detector provided high energy resolution when the beam thickness was much smaller than the thickness of CZT. The FWHM resolution in edge-on illumination mode was 4.2% for 122 keV beam with 0.3 mm thickness, and rapidly deteriorated when the thickness of the beam was increased. The energy resolution of surface-on geometry suffered from strong tailing effect at photon energies higher than 60 keV. It is concluded that tilted angle CZT provides high energy resolution but it is limited to a 1D linear array configuration. The surface-on CZT provides 2D pixel arrays but suffers from tailing effect and charge build up. The edge-on CZT is considered suboptimal as it requires small beam

  1. Pixellated thallium bromide detectors for gamma-ray spectroscopy and imaging

    NASA Astrophysics Data System (ADS)

    Onodera, T.; Hitomi, K.; Shoji, T.; Hiratate, Y.

    2004-06-01

    Recently, pixellated semiconductor detectors exhibit high-energy resolution, which have been studied actively and fabricated from CdTe, CZT and HgI 2. Thallium bromide (TlBr) is a compound semiconductor characterized with its high atomic numbers (Tl=81, Br=35) and high density (7.56 g/cm 3). Thus, TlBr exhibits higher photon stopping power than other semiconductor materials used for radiation detector fabrication such as CdTe, CZT and HgI 2. The wide band gap of TlBr (2.68 eV) permits the detectors low-noise operation at around room temperature. Our studies made an effort to fabricate pixellated TlBr detectors had sufficient detection efficiency and good charge collection efficiency. In this study, pixellated TlBr detectors were fabricated from the crystals purified by the multipass zone-refining method and grown by the horizontal traveling molten zone (TMZ) method. The TlBr detector has a continuous cathode over one crystal surface and 3×3 pixellated anodes (0.57×0.57 mm 2 each) surrounded by a guard ring on the opposite surface. The electrodes were realized by vacuum evaporation of palladium through a shadow mask. Typical thickness of the detector was 2 mm. Spectrometric performance of the TlBr detectors was tested by irradiating them with 241Am (59.5 keV), 57Co (122 keV) and 137Cs (662 keV) gamma-ray sources at temperature of -20°C. Energy resolutions (FWHM) were measured to be 4.0, 6.0 and 9.7 keV for 59.5, 122 and 662 keV gamma-rays, respectively.

  2. Far-infrared spectroscopy of CdTe1-xSex(In): Phonon properties

    NASA Astrophysics Data System (ADS)

    Petrović, M.; Romčević, N.; Trajić, J.; Dobrowolski, W. D.; Romčević, M.; Hadžić, B.; Gilić, M.; Mycielski, A.

    2014-11-01

    The far-infrared reflectivity spectra of CdTe0.97Se0.03 and CdTe0.97Se0.03(In) single crystals were measured at different temperatures. The analysis of the far-infrared spectra was carried out by a fitting procedure based on the dielectric function which includes spatial distribution of free carriers as well as their influence on the plasmon-phonon interaction. We found that the long wavelength optical phonon modes of CdTe1-xSex mixed crystals exhibit a two-mode behavior. The local In mode at about 160 cm-1 is observed. In both sample, a surface layer with a low concentration of free carriers (depleted region) are formed.

  3. Advances in the In-House CdTe Research Activities at NREL

    SciTech Connect

    Gessert, T.; Wu, X.; Dhere, R.; Moutinho, H.; Smith, S.; Romero, M.; Zhou, J.; Duda, A.; Corwine, C.

    2005-01-01

    NREL in-house CdTe research activities have impacted a broad range of recent program priorities. Studies aimed at industrially relevant applications have produced new materials and processes that enhance the performance of devices based on commercial materials (e.g., soda-lime glass, SnO2:F). Preliminary tests of the effectiveness of these novel components using large-scale processes have been encouraging. Similarly, electro- and nano-probe techniques have been developed and used to study the evolution and function of CdTe grain boundaries. Finally, cathodoluminescence (CL) and photoluminescence (PL) studies on single-crystal samples have yielded improved understanding of how various processes may combine to produce important defects in CdTe films.

  4. Stability of CdTe solar cells at elevated temperatures: Bias, temperature, and Cu dependence

    NASA Astrophysics Data System (ADS)

    Hiltner, Jason F.; Sites, James R.

    1999-03-01

    A systematic study of the stability of CdTe solar cells fabricated by SCI and NREL has been made. Cells were stressed at elevated temperatures under various bias conditions, both with illumination (˜2 suns) and in the dark. An activation energy of approximately 1 eV is implied from cells stressed at various elevated temperatures. The stability of CdTe solar cells was found to be bias dependent and device-specific. Cells made with thick CdTe and no back-contact copper as well as by at least one SCI recipe were very stable. Extrapolation of effects assuming Arrhenius behavior yields estimated lifetime expectations for the cells stressed at elevated temperatures.

  5. Optimization of material/device parameters of CdTe photovoltaic for solar cells applications

    NASA Astrophysics Data System (ADS)

    Wijewarnasuriya, Priyalal S.

    2016-05-01

    Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cell applications due to its near optimum bandgap of ~1.5 eV and high absorption coefficient. The energy gap is near optimum for a single-junction solar cell. The high absorption coefficient allows films as thin as 2.5 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 20% have been produced with poly-CdTe materials. This paper examines n/p heterostructure device architecture. The performance limitations related to doping concentrations, minority carrier lifetimes, absorber layer thickness, and surface recombination velocities at the back and front interfaces is assessed. Ultimately, the paper explores device architectures of poly- CdTe and crystalline CdTe to achieve performance comparable to gallium arsenide (GaAs).

  6. Controlled optical properties of water-soluble CdTe nanocrystals via anion exchange.

    PubMed

    Li, Jing; Jia, Jianguang; Lin, Yuan; Zhou, Xiaowen

    2016-02-01

    We report a study on anion exchange reaction of CdTe nanocrystals with S(2-) in aqueous solution under ambient condition. We found that the optical properties of CdTe nanocrystals can be well tuned by controlling the reaction conditions, in which the reaction temperature is crucially important. At low reaction temperature, the product nanocrystals showed blue-shifts in both absorption and PL spectra, while the photoluminescence quantum yield (PLQY) was significantly enhanced. When anion exchanges were carried out at higher reaction temperature, on the other hand, obvious red shifts in absorption and PL spectra accompanied by a fast increase followed by gradual decrease in PLQY were observed. On variation of S(2-) concentration, it was found that the overall kinetics of Te(2-) for S(2-) exchanges depends also on [S(2-)] when anion exchanges were performed at higher temperature. A possible mechanism for anion exchanges in CdTe NCs was proposed. PMID:26520812

  7. Sulfur diffusion in polycrystalline thin-film CdTe solar cells

    SciTech Connect

    Aslan, M.H.; Song, W.; Tang, T.; Mao, D.; Collins, R.T.; Levi, D.H.; Ahrenkiel, R.K.; Lindstrom, S.C.; Johnson, M.B.

    1998-12-31

    X-ray diffraction and photoluminescence measurements have been used to characterize the diffusion of S into CdTe during post growth annealing of CdTe solar cells. For anneals at 410 C in the presence of CdCl{sub 2}, evidence that both a CdTe{sub 1{minus}x}S{sub x} phase and nearly-pure CdTe are present near the back contact is observed. The ternary phase becomes more prominent and the S concentration increases with depth reaching roughly 4--5% near the CdS interface. Much less diffusion is observed at 350 C while for a 460 C anneal, CdTe{sub 1{minus}x}S{sub x} with a S concentration near 5% is found throughout the layer. The presence of CdCl{sub 2} during the anneal enhances the interdiffusion.

  8. High resistivity in undoped CdTe: carrier compensation of Te antisites and Cd vacancies

    NASA Astrophysics Data System (ADS)

    Lindström, A.; Mirbt, S.; Sanyal, B.; Klintenberg, M.

    2016-01-01

    In this paper, we focus on the high resistivity of intentionally undoped CdTe, where the most prevalent defects are Cd vacancies and Te antisites. Our calculated formation energies lead to the conclusion that the Fermi energy of undoped CdTe is at midgap due to carrier compensation of Te antisites and Cd vacancies, which explains the experimentally observed high resistivity. We use density functional theory with the hybrid functional of Heyd, Scuseria and Ernzerhof (HSE06) and show that the proper description of the native defects in general fails using the local density approximation (LDA) instead of HSE06. We conclude that LDA is insufficient to understand the high resistivity of undoped CdTe. We calculate the neutral and double acceptor state of the Te antisite to be intrinsic DX-centers.

  9. Controlled optical properties of water-soluble CdTe nanocrystals via anion exchange.

    PubMed

    Li, Jing; Jia, Jianguang; Lin, Yuan; Zhou, Xiaowen

    2016-02-01

    We report a study on anion exchange reaction of CdTe nanocrystals with S(2-) in aqueous solution under ambient condition. We found that the optical properties of CdTe nanocrystals can be well tuned by controlling the reaction conditions, in which the reaction temperature is crucially important. At low reaction temperature, the product nanocrystals showed blue-shifts in both absorption and PL spectra, while the photoluminescence quantum yield (PLQY) was significantly enhanced. When anion exchanges were carried out at higher reaction temperature, on the other hand, obvious red shifts in absorption and PL spectra accompanied by a fast increase followed by gradual decrease in PLQY were observed. On variation of S(2-) concentration, it was found that the overall kinetics of Te(2-) for S(2-) exchanges depends also on [S(2-)] when anion exchanges were performed at higher temperature. A possible mechanism for anion exchanges in CdTe NCs was proposed.

  10. Preliminary characterisation of CdTe M-π-n diode structures

    NASA Astrophysics Data System (ADS)

    Greiffenberg, D.; Fauler, A.; Zwerger, A.; Baumbach, T.; Fiederle, M.

    2011-05-01

    Due to the high Z, 1 mm CdTe (Z=52, 48) offers a high absorption probability for photons with energies up to 100 keV [1] (Zwerger and Fiederle, 2007). In order to further reduce the dark current flowing through the sensor when applying high voltage, CdTe diode structures (M-π-n) have been processed at the Freiburg Materials Research Center (FMF). As comparison, CdTe sensors with ohmic contacts, working as photoresistors have also been produced. The different sensor structures have been flip-chip bonded on Medipix2 readout electronics [5] (Llopart and Campbell, 2002). This work reports on the I-V characteristics of the different sensor structures, confirming the improved leakage current flowing through the diode structure. Furthermore, the imaging capabilities of the diode structures with respect to their spatial resolution are presented.

  11. Hard X-ray and γ-ray detectors for the NeXT mission

    NASA Astrophysics Data System (ADS)

    Takahashi, Tadayuki; Makishima, Kazuo; Fukazawa, Yasushi; Kokubun, Motohide; Nakazawa, Kazuhiro; Nomachi, Masaharu; Tajima, Hiroyasu; Tashiro, Makoto; Terada, Yukikatsu

    2004-02-01

    When compared with X-ray astronomy, the γ-ray astronomy, especially in the energy band from 10 keV to several MeV, is still immature and significant improvements should be done to obtain sensitivity comparable to that achieved in the energy band below 10 keV. In order to fill this "sensitivity gap", the NeXT (New X-ray Telescope) mission has been proposed as a successor of the Astro-E2 mission. The high-energy response of the super mirror will enable us to perform first sensitive imaging observation up to 80 keV. One idea for the focal plane detector is to combine a fully depleted X-ray imaging device (soft X-ray detector) and a pixelated CdTe (cadmium telluride) detector. In the soft γ-ray band upto ˜1 MeV, a narrow field-of-view Compton γ-ray telescope utilizing several tens of layers of thin Si or CdTe detector has been proposed to obtain much higher sensitivity than present instruments.

  12. Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films

    NASA Astrophysics Data System (ADS)

    Kumar, B. Rajesh; Hymavathi, B.; Rao, T. Subba

    2014-01-01

    Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 °C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2θ = 27.7°, 46.1° and 54.6°, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 °C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (ΔE) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 - 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 - 1.57. The refractive index, n decreases with the increase of wavelength, λ. The value of n and k increases with the increase of substrate temperature.

  13. Development of Substrate Structure CdTe Photovoltaic Devices with Performance Exceeding 10%: Preprint

    SciTech Connect

    Dhere, R. G.; Duenow, J. N.; DeHart, C. M.; Li, J. V.; Kuciauskas, D.; Gessert, T. A.

    2012-08-01

    Most work on CdTe-based solar cells has focused on devices with a superstrate structure. This focus is due to the early success of the superstrate structure in producing high-efficiency cells, problems of suitable ohmic contacts for lightly doped CdTe, and the simplicity of the structure for manufacturing. The development of the CdCl2 heat treatment boosted CdTe technology and perpetuated the use of the superstrate structure. However, despite the beneficial attributes of the superstrate structure, devices with a substrate structure are attractive both commercially and scientifically. The substrate structure eliminates the need for transparent superstrates and thus allows the use of flexible metal and possibly plastic substrates. From a scientific perspective, it allows better control in forming the junction and direct access to the junction for detailed analysis. Research on such devices has been limited. The efficiency of these devices has been limited to around 8% due to low open-circuit voltage (Voc) and fill factor. In this paper, we present our recent device development efforts at NREL on substrate-structure CdTe devices. We have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. We have worked on a variety of contact materials including Cu-doped ZnTe and CuxTe. We will present a comparative analysis of the performance of these contacts. In addition, we have studied the influence of fabrication parameters on junction properties. We will present an overview of our development work, which has led to CdTe devices with Voc values of more than 860 mV and NREL-confirmed efficiencies approaching 11%.

  14. Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe

    NASA Astrophysics Data System (ADS)

    Colegrove, Eric; Harvey, Steven P.; Yang, Ji-Hui; Burst, James M.; Albin, David S.; Wei, Su-Huai; Metzger, Wyatt K.

    2016-05-01

    A key challenge in cadmium-telluride (CdTe) semiconductors is obtaining stable and high hole density. Group-I elements substituting Cd can form acceptors but easily self-compensate and diffuse quickly. For example, CdTe photovoltaics have relied on copper as a dopant, but this creates stability problems and hole density that has not exceeded 1015 cm-3 . If hole density can be increased beyond 1016 cm-3 , CdTe solar technology can exceed multicrystalline silicon performance and provide levelized costs of electricity below conventional energy sources. Group-V elements substituting Te offer a solution, but they are very difficult to incorporate. Using time-of-flight secondary-ion mass spectrometry, we examine bulk and grain-boundary diffusion of phosphorus (P) in CdTe in Cd-rich conditions. We find that in addition to slow bulk diffusion and fast grain-boundary diffusion, there is a critical fast bulk-diffusion component that enables deep P incorporation in CdTe. Detailed first-principle calculations indicate the slow bulk-diffusion component is caused by substitutional P diffusion through the Te sublattice, whereas the fast bulk-diffusion component is caused by P diffusing through interstitial lattice sites following the combination of a kick-out step and two rotation steps. The latter is limited in magnitude by high formation energy, but is sufficient to manipulate P incorporation. In addition to an increased physical understanding, these results open up experimental possibilities for group-V doping in CdTe applications.

  15. Long-term exposure to CdTe quantum dots causes functional impairments in live cells.

    PubMed

    Cho, Sung Ju; Maysinger, Dusica; Jain, Manasi; Röder, Beate; Hackbarth, Steffen; Winnik, Françoise M

    2007-02-13

    Several studies suggested that the cytotoxic effects of quantum dots (QDs) may be mediated by cadmium ions (Cd2+) released from the QDs cores. The objective of this work was to assess the intracellular Cd2+ concentration in human breast cancer MCF-7 cells treated with cadmium telluride (CdTe) and core/shell cadmium selenide/zinc sulfide (CdSe/ZnS) nanoparticles capped with mercaptopropionic acid (MPA), cysteamine (Cys), or N-acetylcysteine (NAC) conjugated to cysteamine. The Cd2+ concentration determined by a Cd2+-specific cellular assay was below the assay detection limit (<5 nM) in cells treated with CdSe/ZnS QDs, while in cells incubated with CdTe QDs, it ranged from approximately 30 to 150 nM, depending on the capping molecule. A cell viability assay revealed that CdSe/ZnS QDs were nontoxic, whereas the CdTe QDs were cytotoxic. However, for the various CdTe QD samples, there was no dose-dependent correlation between cell viability and intracellular [Cd2+], implying that their cytotoxicity cannot be attributed solely to the toxic effect of free Cd2+. Confocal laser scanning microscopy of CdTe QDs-treated cells imaged with organelle-specific dyes revealed significant lysosomal damage attributable to the presence of Cd2+ and of reactive oxygen species (ROS), which can be formed via Cd2+-specific cellular pathways and/or via CdTe-triggered photoxidative processes involving singlet oxygen or electron transfer from excited QDs to oxygen. In summary, CdTe QDs induce cell death via mechanisms involving both Cd2+ and ROS accompanied by lysosomal enlargement and intracellular redistribution.

  16. Effect of shells on photoluminescence of aqueous CdTe quantum dots

    SciTech Connect

    Yuan, Zhimin; Yang, Ping

    2013-07-15

    Graphical abstract: Size-tunable CdTe coated with several shells using an aqueous solution synthesis. CdTe/CdS/ZnS quantum dots exhibited high PL efficiency up to 80% which implies the promising applications for biomedical labeling. - Highlights: • CdTe quantum dots were fabricated using an aqueous synthesis. • CdS, ZnS, and CdS/ZnS shells were subsequently deposited on CdTe cores. • Outer ZnS shells provide an efficient confinement of electron and hole inside the QDs. • Inside CdS shells can reduce the strain on the QDs. • Aqueous CdTe/CdS/ZnS QDs exhibited high stability and photoluminescence efficiency of 80%. - Abstract: CdTe cores with various sizes were fabricated in aqueous solutions. Inorganic shells including CdS, ZnS, and CdS/ZnS were subsequently deposited on the cores through a similar aqueous procedure to investigate the effect of shells on the photoluminescence properties of the cores. In the case of CdTe/CdS/ZnS quantum dots, the outer ZnS shell provides an efficient confinement of electron and hole wavefunctions inside the quantum dots, while the middle CdS shell sandwiched between the CdTe core and ZnS shell can be introduced to obviously reduce the strain on the quantum dots because the lattice parameters of CdS is situated at the intermediate-level between those of CdTe and ZnS. In comparison with CdTe/ZnS core–shell quantum dots, the as-prepared water-soluble CdTe/CdS/ZnS quantum dots in our case can exhibit high photochemical stability and photoluminescence efficiency up to 80% in an aqueous solution, which implies the promising applications in the field of biomedical labeling.

  17. Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films

    SciTech Connect

    Kumar, B. Rajesh; Hymavathi, B.; Rao, T. Subba

    2014-01-28

    Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 °C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2θ = 27.7°, 46.1° and 54.6°, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 °C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (ΔE) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 – 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 – 1.57. The refractive index, n decreases with the increase of wavelength, λ. The value of n and k increases with the increase of substrate temperature.

  18. Improved spectrometric characteristics of thallium bromide nuclear radiation detectors

    NASA Astrophysics Data System (ADS)

    Hitomi, K.; Murayama, T.; Shoji, T.; Suehiro, T.; Hiratate, Y.

    1999-06-01

    Thallium bromide (TlBr) is a compound semiconductor with a high atomic number and wide band gap. In this study, nuclear radiation detectors have been fabricated from the TlBr crystals. The TlBr crystals were grown by the horizontal travelling molten zone (TMZ) method using the materials purified by many pass zone refining. The crystals were characterized by measuring the resistivity, the mobility-lifetime ( μτ) product and the energy required to create an electron-hole pair (the ɛ value). Improved energy resolution has been obtained by the TlBr radiation detectors. At room temperature the full-width at half-maximum (FWHM) for the 59.5, 122 and 662 keV γ-ray photo peak obtained from the detectors were 3.3, 8.8 and 29.5 keV, respectively. By comparing the saturated peak position of the TlBr detector with that of the CdTe detector, the ɛ value has been estimated to be about 5.85 eV for the TlBr crystal.

  19. Rf sputtering of CdTE and CdS for thin film PV

    NASA Astrophysics Data System (ADS)

    Compaan, A. D.; Tabory, C. N.; Shao, M.; Fischer, A.; Feng, Z.; Bohn, R. G.

    1994-06-01

    In late 1992 we demonstrated the first rf sputtered CdS/CdTe photovoltaic cell with efficiency exceeding 10%. In this cell both CdS and CdTe layers were deposited by rf sputtering. In this paper we report preliminary measurements of 1) optical emission spectroscopy of the rf plasma, 2) the width of the phonon Raman line as a function of deposition temperature for CdS, and 3) studies of oxygen doping during pulsed laser deposition of CdTe.

  20. Long Lifetime Hole Traps at Grain Boundaries in CdTe Thin-Film Photovoltaics.

    PubMed

    Mendis, B G; Gachet, D; Major, J D; Durose, K

    2015-11-20

    A novel time-resolved cathodoluminescence method, where a pulsed electron beam is generated via the photoelectric effect, is used to probe individual CdTe grain boundaries. Excitons have a short lifetime (≤100 ps) within the grains and are rapidly quenched at the grain boundary. However, a ~47 meV shallow acceptor, believed to be due to oxygen, can act as a long lifetime hole trap, even at the grain boundaries where their concentration is higher. This provides direct evidence supporting recent observations of hopping conduction across grain boundaries in highly doped CdTe at low temperature. PMID:26636877

  1. Long Lifetime Hole Traps at Grain Boundaries in CdTe Thin-Film Photovoltaics

    NASA Astrophysics Data System (ADS)

    Mendis, B. G.; Gachet, D.; Major, J. D.; Durose, K.

    2015-11-01

    A novel time-resolved cathodoluminescence method, where a pulsed electron beam is generated via the photoelectric effect, is used to probe individual CdTe grain boundaries. Excitons have a short lifetime (≤100 ps ) within the grains and are rapidly quenched at the grain boundary. However, a ˜47 meV shallow acceptor, believed to be due to oxygen, can act as a long lifetime hole trap, even at the grain boundaries where their concentration is higher. This provides direct evidence supporting recent observations of hopping conduction across grain boundaries in highly doped CdTe at low temperature.

  2. Characterizing Recombination in CdTe Solar Cells with Time-Resolved Photoluminescence: Preprint

    SciTech Connect

    Metzger, W. K.; Romero, M. J.; Dippo, P.; Young, M.

    2006-05-01

    Time-resolved photoluminescence (TRPL) computer simulations demonstrate that under certain experimental conditions it is possible to assess recombination in CdTe solar cells in spite of the junction. This is supported by experimental findings that open-circuit voltage (Voc) is dependent on lifetime in a manner consistent with device theory. Measurements on inverted structures show that the CdCl2 treatment significantly reduces recombination in the CdTe layer without S diffusion. However, S diffusion is required for lifetimes comparable to those observed in high-efficiency solar cells. The results indicate that substrate solar cells can be fabricated with recombination lifetimes similar to superstrate cells.

  3. Further studies of single-sided charge-sharing CZT strip detectors

    NASA Astrophysics Data System (ADS)

    Donmez, Burcin; Macri, John R.; McConnell, Mark L.; Ryan, James M.; Widholm, Mark; Narita, Tomohiko; Hamel, Louis-Andre

    2005-08-01

    We report progress in the study of a thick CZT strip detector module designed to perform gamma-ray spectroscopy and 3-D imaging. We report preliminary performance measurements of 7.5 mm thick single-sided charge-sharing strip detector prototype devices. This design features both row and column contacts on the anode surface. This electron-only approach addresses problems associated with poor hole transport in CZT that limit the thickness and energy range of double-sided strip detectors. This work includes laboratory and simulation studies aimed at developing compact, efficient, detector modules for 0.05 to 1 MeV gamma measurements while minimizing the number and complexity of the electronic readout channels. This is particularly important in space-based coded aperture and Compton telescope instruments that require large area, large volume detector arrays. Such arrays will be required for the NASA Black Hole Finder Probe (BHFP)and Advanced Compton Telescope (ACT). This new design requires an anode pattern with contacts whose dimensions and spacing are roughly the size of the ionization charge cloud. The first prototype devices have 125 μm anode contacts on 225 μm pitch. Our results demonstrate the principle of operation but suggest that even finer anode contact feature sizes will be necessary to achieve the desired performance.

  4. Spectroscopic properties of large-volume virtual Frisch-grid CdMnTe detectors

    NASA Astrophysics Data System (ADS)

    Kim, K. H.; Park, Chansun; Kim, Pilsu; Cho, Shinhaeng; Lee, Jinseo; Hong, T. K.; Hossain, A.; Bolotnikov, A. E.; James, R. B.

    2015-06-01

    CdMnTe(CMT) is a promising alternative material for use as a room-temperature radiation detector. Frisch-grid detectors have a simple configuration and outstanding spectral performance compared with other single-carrier collection techniques. The energy resolution of large-volume virtual Frisch-grid CMT detectors was tested by using several isotopes such as 57Co, 22 Na, 133Ba, and 137Cs together or separately. Energy resolutions of 6.7% and 2.1% were obtained for 122-keV 57Co and 662-keV 137Cs gamma rays, respectively, without using any additional signal processing techniques. Also, a 12-mm-thick CMT detector detected the 511-keV and 1.277-MeV gamma peaks of 22Na with values of the full width at half maximum (FWHM) of 2.7% and 1.5%, respectively. In addition, multiple low- and high-energy gamma peaks of 133Ba were well separated. The mobilitylifetime product calculated from the shift of the 662-keV photo-peak vs. bias by using Hecht's equation was 7 × 10 -3 cm2/V. These results show the possibility of using CMT detectors in response to various requirements for gamma-ray detection at room-temperature.

  5. Dust Detector

    NASA Technical Reports Server (NTRS)

    Kelley, M. C.

    2001-01-01

    We discuss a recent sounding rocket experiment which found charged dust in the Earth's tropical mesosphere. The dust detector was designed to measure small (5000 - 10000 amu.) charged dust particles, most likely of meteoric origin. A 5 km thick layer of positively charged dust was found at an altitude of 90 km, in the vicinity of an observed sporadic sodium layer and sporadic E layer. The observed dust was positively charged in the bulk of the dust layer, but was negatively charged near the bottom.

  6. Ion detector

    DOEpatents

    Tullis, Andrew M.

    1987-01-01

    An improved ion detector device of the ionization detection device chamber ype comprises an ionization chamber having a central electrode therein surrounded by a cylindrical electrode member within the chamber with a collar frictionally fitted around at least one of the electrodes. The collar has electrical contact means carried in an annular groove in an inner bore of the collar to contact the outer surface of the electrode to provide electrical contact between an external terminal and the electrode without the need to solder leads to the electrode.

  7. Investigation of radiation doses in open space using TLD detectors.

    PubMed

    Reitz, G; Facius, R; Bilski, P; Olko, P

    2002-01-01

    The low energy component of the cosmic radiation field is strongly modified by the shielding of the spacecraft and it is time and location dependent. Thermoluminescent lithium fluoride detectors have been applied to determine the radiation doses inside the ESA-Facility BIOPAN. The BIOPAN facility was mounted outside and launched on a Foton spacecraft and opened to space to allow exposure of several experiments to open space. Standard TLD-600. TLD-700 chips, two layers MTS-Ns sintered pellets with different effective thickness of the sensitive layer and MTS-N of different thickness have been exposed with different shielding thicknesses in front of them. The measured TL signal in the 0.1 mm thick detector just shielded by an aluminised Kapton foil of 25 microm thickness in front yielded a dose of 29.8 Gy (calibrated with 137Cs gamma rays) for an exposure time of 12.7 days: after 2.5 g.cm(-2) shielding the doses dropped to 3 mGy. The monitoring of radiation doses and its depth dose distribution outside the spacecraft are of great interest for radiation protection of astronauts working in open space. The knowledge of depth-dose distribution is a prerequisite to determine the organ doses an astronaut will receive during an extravehicular activity (EVA). The BIOPAN experiments are to be continued in the future. PMID:12382937

  8. Direct conversion Si and CdZnTe detectors for digital mammography

    NASA Astrophysics Data System (ADS)

    Yin, Shi; Tümer, Tümay O.; Maeding, Dale; Mainprize, James; Mawdsley, Gord; Yaffe, Martin J.; Gordon, Eli E.; Hamilton, William J.

    2000-07-01

    Hybrid pixel detector arrays that convert X-rays directly into charge signals are under development at NOVA for application to digital mammography. This technology also has wide application possibilities in other fields of radiology or in industrial imaging, nondestructive evaluation (NDE) and nondestructive inspection (NDI). These detectors have potentially superior properties compared to either emulsion-based film-screen systems which has nonlinear response to X-rays, or phosphor-based detectors in which there is an intermediate step of X-ray to light photon conversion (Feig and Yaffe, Radiol. Clinics North America 33 (1995) 1205-1230). Potential advantages of direct conversion detectors are high quantum efficiencies (QE) of 98% or higher (for 0.3 mm thick CdZnTe detector with 20 keV X-rays), improved contrast, high sensitivity and low intrinsic noise. These factors are expected to contribute to high detective quantum efficiency (DQE). The prototype hybrid pixel detector developed has 50×50 μm pixel size, and is designed to have linear response to X-rays, and can support a dynamic range up to 14 bits. Modulation Transfer Function (MTF) is measured on a 1-mm silicon detector system where 10% or better modulations are obtained at 10 lp/mm spatial frequency. Preliminary DQE measurements of the same detector yields a value of 75% at zero spatial frequency. In this paper, we report results obtained from our first full size prototype readout ASIC chips hybridized with both silicon and CdZnTe detector arrays and present preliminary MTF and DQE measurement results as well as some test images.

  9. Performance characteristics of thermal neutron detectors based on Li6Y(BO3)3:Ce single crystals

    NASA Astrophysics Data System (ADS)

    Singh, A. K.; Tyagi, M.; Singh, S. G.; Tiwari, B.; Desai, D. G.; Sen, S.; Desai, S. S.; Ghodke, S. S.; Gadkari, S. C.

    2015-12-01

    Crack-free single crystals of Ce doped Li6Y(BO3)3 (LYBO:Ce) have been grown using the Czochralski technique. Grown crystals were characterized for their optical and scintillation characteristics to explore their potential as neutron detectors. Scintillator detectors based on LYBO:Ce crystal were used successfully to record the pulse height spectra from various neutron sources in the flux range from 10 n/cm2/s to 107 n/cm2/s. The detection efficiency for thermal neutrons was found to be over 80% for a 2 mm thick LYBO:Ce crystal. The scintillation decay times measured for neutron and gamma radiations were about 27 ns and 49 ns, respectively.

  10. Structural, optical and photovoltaic properties of co-doped CdTe QDs for quantum dots sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Ayyaswamy, Arivarasan; Ganapathy, Sasikala; Alsalme, Ali; Alghamdi, Abdulaziz; Ramasamy, Jayavel

    2015-12-01

    Zinc and sulfur alloyed CdTe quantum dots (QDs) sensitized TiO2 photoelectrodes have been fabricated for quantum dots sensitized solar cells. Alloyed CdTe QDs were prepared in aqueous phase using mercaptosuccinic acid (MSA) as a capping agent. The influence of co-doping on the structural property of CdTe QDs was studied by XRD analysis. The enhanced optical absorption of alloyed CdTe QDs was studied using UV-vis absorption and fluorescence emission spectra. The capping of MSA molecules over CdTe QDs was confirmed by the FTIR and XPS analyses. Thermogravimetric analysis confirms that the prepared QDs were thermally stable up to 600 °C. The photovoltaic performance of alloyed CdTe QDs sensitized TiO2 photoelectrodes were studied using J-V characteristics under the illumination of light with 1 Sun intensity. These results show the highest photo conversion efficiency of η = 1.21%-5% Zn & S alloyed CdTe QDs.

  11. MBE-Grown CdTe Layers on GaAs with In-assisted Thermal Deoxidation

    NASA Astrophysics Data System (ADS)

    Arı, Ozan; Bilgilisoy, Elif; Ozceri, Elif; Selamet, Yusuf

    2016-10-01

    Molecular beam epitaxy (MBE) growth of thin (˜2 μm) CdTe layers characterized by high crystal quality and low defect density on lattice mismatched substrates, such as GaAs and Si, has thus far been difficult to achieve. In this work, we report the effects of in situ thermal deoxidation under In and As4 overpressure prior to the CdTe growth on epiready GaAs(211)B wafers, aiming to enhance CdTe crystal quality. Thermally deoxidized GaAs samples were analyzed using in situ reflection high energy electron diffraction, along with ex situ x-ray photo-electron spectroscopy (XPS) and atomic force microscopy. MBE-grown CdTe layers were characterized using x-ray diffraction (XRD) and Everson-type wet chemical defect decoration etching. We found that In-assisted desorption allowed for easier surface preparation and resulted in a smoother surface compared to As-assisted surface preparation. By applying In-assisted thermal deoxidation to GaAs substrates prior to the CdTe growth, we have obtained single crystal CdTe films with a CdTe(422) XRD rocking curve with a full-width half-maximum value of 130.8 arc-s and etch pit density of 4 × 106 cm-2 for 2.54 μm thickness. We confirmed, by XPS analysis, no In contamination on the thermally deoxidized surface.

  12. Optical and electrical characterizations of highly efficient CdTe thin film solar cells prepared by close-spaced sublimation

    NASA Astrophysics Data System (ADS)

    Okamoto, T.; Yamada, A.; Konagai, M.

    2000-06-01

    The effects of the Cu diffusion on the optical and electrical properties of CdTe thin film solar cells prepared by close-spaced sublimation (CSS) were investigated by capacitance-voltage ( C- V) measurement and low-temperature photoluminescence (PL) measurement. C- V measurement revealed that the net acceptor concentration in the CdTe layer was independent of the heat treatment after screen printing of the Cu-doped graphite electrode for Cu diffusion into the CdTe layer, although it greatly affected the solar cell performance. Furthermore, the depth profile of PL spectrum of CdTe layer implies that the heat treatment for Cu diffusion facilitates the formation of low-resistance contact to CdTe through the formation of a heavily doped (p +) region in the CdTe adjacent to the back electrode, but Cu atoms do not act as effective acceptors in the CdTe layer except the region near the back electrode.

  13. Band structure and Optical properties CdTe and CdSn3Te4 thin films

    NASA Astrophysics Data System (ADS)

    Venkatachalam, T.; Velumani, S.; Ganesan, S.; Sakthivel, K.

    2008-04-01

    CdTe and CdSn3Te4 compounds were prepared by direct reaction of their high purity elemental constituents using rotating furnace. Optimal deposition conditions for the deposition of CdTe and CdSn3Te4 thin films in hot wall evaporation setup were simulated using Monte Carlo technique. Thin films of CdTe and CdSn3Te4 were deposited on glass substrates by hot wall evaporation method. From the XRD measurements it was found that the films of CdTe and CdSn3Te4 were of cubic zinc-blende and rock salt structures respectively. The lattice parameters were determined as a = 6.476 Å (CdTe) and a = 6.238 Å (CdSn3Te4) from the XRD data. The UV-Vis-NIR optical transmittance spectra of thin films of different films were obtained and it was found that the direct optical band gaps were 1.4 eV (CdTe) and 0.8 eV (CdSn3Te4). Electronic structure, band parameters and optical spectra of CdTe and CdSn3Te4 were calculated from ab initio studies within the GGA approximation. The experimental results were in good agreement with the theoretical values.

  14. Cooperative antimicrobial activity of CdTe quantum dots with rocephin and fluorescence monitoring for Escherichia coli.

    PubMed

    Luo, Zhihui; Wu, Qingsheng; Zhang, Meng; Li, Ping; Ding, Yaping

    2011-10-01

    In this study, the cooperative antibacterial efficiency of CdTe quantum dots (QDs) and rocephin against Escherichia coli (E. coli) was investigated. Colony-forming capability assay and diameter of inhibition zone (DIZ) measurement showed the antibiotic action of CdTe QDs-rocephin complex was better than the superposition of pure CdTe QDs and rocephin. The fractional inhibitory concentration index (FICI) indicated that CdTe QDs-rocephin complex could achieve great cooperative antimicrobial effects. The infrared ray (IR) spectrum, photoluminescence (PL) spectrophotometry, and detection of reactive oxygen species (ROS) indicated that CdTe QDs and rocephin formed a stable antimicrobial group through electrostatic attraction and hydrogen bonds and then killed the E. coli together. Meanwhile, the fluorescence intensity of CdTe QDs and the optical density (OD) value of E. coli showed a good linear relationship. Thus, dynamic monitoring to total bacterial concentration in the antibacterial process was realized by the CdTe QDs.

  15. Oscillator detector

    SciTech Connect

    Potter, B.M.

    1980-05-13

    An alien liquid detector employs a monitoring element and an oscillatory electronic circuit for maintaining the temperature of the monitoring element substantially above ambient temperature. The output wave form, eg., frequency of oscillation or wave shape, of the oscillatory circuit depends upon the temperaturedependent electrical characteristic of the monitoring element. A predetermined change in the output waveform allows water to be discriminated from another liquid, eg., oil. Features of the invention employing two thermistors in two oscillatory circuits include positioning one thermistor for contact with water and the other thermistor above the oil-water interface to detect a layer of oil if present. Unique oscillatory circuit arrangements are shown that achieve effective thermistor action with an economy of parts and energizing power. These include an operational amplifier employed in an astable multivibrator circuit, a discrete transistor-powered tank circuit, and use of an integrated circuit chip.

  16. Analysis of electroluminescence images in small-area circular CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Bokalič, Matevž; Raguse, John; Sites, James R.; Topič, Marko

    2013-09-01

    The electroluminescence (EL) imaging process of small area solar cells is investigated in detail to expose optical and electrical effects that influence image acquisition and corrupt the acquired image. An approach to correct the measured EL images and to extract the exact EL radiation as emitted from the photovoltaic device is presented. EL images of circular cadmium telluride (CdTe) solar cells are obtained under different conditions. The power-law relationship between forward injection current and EL emission and a negative temperature coefficient of EL radiation are observed. The distributed Simulation Program with Integrated Circuit Emphasis (SPICE®) model of the circular CdTe solar cell is used to simulate the dark J-V curve and current distribution under the conditions used during EL measurements. Simulation results are presented as circularly averaged EL intensity profiles, which clearly show that the ratio between resistive parameters determines the current distribution in thin-film solar cells. The exact resistance values for front and back contact layers and for CdTe bulk layer are determined at different temperatures, and a negative temperature coefficient for the CdTe bulk resistance is observed.

  17. Spray Deposition of High Quality CuInSe2 and CdTe Films: Preprint

    SciTech Connect

    Curtis, C. J.; van Hest, M.; Miedaner, A.; Leisch, J.; Hersh, P.; Nekuda, J.; Ginley, D. S.

    2008-05-01

    A number of different ink and deposition approaches have been used for the deposition of CuInSe2 (CIS), Cu(In,Ga)Se2 (CIGS), and CdTe films. For CIS and CIGS, soluble precursors containing Cu, In, and Ga have been developed and used in two ways to produce CIS films. In the first, In-containing precursor films were sprayed on Mo-coated glass substrates and converted by rapid thermal processing (RTP) to In2Se3. Then a Cu-containing film was sprayed down on top of the In2Se3 and the stacked films were again thermally processed to give CIS. In the second approach, the Cu-, In-, and Ga-containing inks were combined in the proper ratio to produce a mixed Cu-In-Ga ink that was sprayed on substrates and thermally processed to give CIGS films directly. For CdTe deposition, ink consisting of CdTe nanoparticles dispersed in methanol was prepared and used to spray precursor films. Annealing these precursor films in the presence of CdCl2 produced large-grained CdTe films. The films were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). Optimized spray and processing conditions are crucial to obtain dense, crystalline films.

  18. Controllable synthesis of thiol-capped CdTe nanoparticles for optical sensing of triethylenetetramine dihydrochloride.

    PubMed

    Huy, Bui The; Kumar, Avvaru Praveen; Seo, Min-Ho; Kim, Jan-Di; Lee, Yong-Ill

    2014-10-01

    Highly luminescent CdTe quantum dots (QDs) were synthesized through a co-precipitation route in aqueous salt solutions using different thiols as stabilizers. The synthetic procedure was simple, efficient, and stable. It could also allow controlling the emission wavelength by varying the experimental conditions such as reaction time and pH values. The strong luminescence of the QDs was observed under UV-excitation and emission colors could be adjusted. The interaction between CdTe QDs and triethylenetetramine dihydrochloride (TETA) which is a candidate treatment for diabetic cardiovascular complication was investigated by fluorescence spectroscopy. Based on the quenching effect on CdTe photoluminescence intensity by TETA, a simple assay system for analyzing the content of TETA in aqueous samples was developed. The linearity was maintained in the range of 0.2 μM to 1.2 μM (R2 = 0.994) with a limit of detection (LOD; S/N = 3) at 28 nM. The results showed that CdTe QDs capped with diverse thiols has a potential for the quantitative analysis of TETA in urine samples.

  19. Interfacial charge transfer between CdTe quantum dots and Gram negative vs. Gram positive bacteria.

    SciTech Connect

    Dumas, E.; Gao, C.; Suffern, D.; Bradforth, S. E.; Dimitrejevic, N. M.; Nadeau, J. L.; McGill Univ.; Univ. of Southern California

    2010-01-01

    Oxidative toxicity of semiconductor and metal nanomaterials to cells has been well established. However, it may result from many different mechanisms, some requiring direct cell contact and others resulting from the diffusion of reactive species in solution. Published results are contradictory due to differences in particle preparation, bacterial strain, and experimental conditions. It has been recently found that C{sub 60} nanoparticles can cause direct oxidative damage to bacterial proteins and membranes, including causing a loss of cell membrane potential (depolarization). However, this did not correlate with toxicity. In this study we perform a similar analysis using fluorescent CdTe quantum dots, adapting our tools to make use of the particles fluorescence. We find that two Gram positive strains show direct electron transfer to CdTe, resulting in changes in CdTe fluorescence lifetimes. These two strains also show changes in membrane potential upon nanoparticle binding. Two Gram negative strains do not show these effects - nevertheless, they are over 10-fold more sensitive to CdTe than the Gram positives. We find subtoxic levels of Cd{sup 2+} release from the particles upon irradiation of the particles, but significant production of hydroxyl radicals, suggesting that the latter is a major source of toxicity. These results help establish mechanisms of toxicity and also provide caveats for use of certain reporter dyes with fluorescent nanoparticles which will be of use to anyone performing these assays. The findings also suggest future avenues of inquiry into electron transfer processes between nanomaterials and bacteria.

  20. Novel synthesis of β-cyclodextrin functionalized CdTe quantum dots as luminescent probes

    NASA Astrophysics Data System (ADS)

    Chen, Xiao-Feng; Zhou, Min; Chang, Yan-Ping; Ren, Cui-Ling; Chen, Hong-Li; Chen, Xing-Guo

    2012-12-01

    A novel, inexpensive procedure for the preparation of highly fluorescent and water-soluble CdTe quantum dots (QDs) using β-cyclodextrin (β-CD) as surface-coating agents was fabricated through the substitution reaction at the C-6 position of mono-6-deoxy-6-(p-tolylsulfonyl)-cyclodextrin (6-TsO-β-CD) by the sbnd NH2 of (3-aminopropyl)triethoxysilane-coated CdTe QDs (APTES/CdTe QDs) under mild conditions. X-ray powder diffraction (XRD), Fourier transform infrared spectra (FT-IR), transmission electron microscopy (TEM), high-resolution TEM (HRTEM), ultraviolet and visible (UV-vis) spectrophotometer, and fluorescence (FL) spectrophotometer were used to characterize the obtained nanoparticles, which proved that the CdTe QDs have been effectively modified by β-CD. The quantum yields (QYs) of CdTe QDs, APTES/CdTe QDs and β-CD/APTES/CdTe QDs in water comparative to Rhodamine 6G were about 17%, 12%, and 9%, respectively. A pair of isomer o,p'-DDT and p,p'-DDT was chosen as the template molecules to evaluate the molecular recognition properties of β-CD/APTES/CdTe QDs. The results revealed that β-CD/APTES/CdTe QDs simultaneously possessed unique optical properties of QDs and excellent molecules recognition ability of β-CD through combining their individual distinct advantages.

  1. Capture kinetics at deep-level defects in MBE-grown CdTe layers

    NASA Astrophysics Data System (ADS)

    Olender, Karolina; Wosinski, Tadeusz; Makosa, Andrzej; Kret, Slawomir; Kolkovsky, Valery; Karczewski, Grzegorz

    2011-04-01

    The results of deep-level transient spectroscopy (DLTS) investigations in n-type CdTe layers grown by the molecular-beam epitaxy (MBE) technique on lattice-mismatched GaAs substrates are described. Three electron traps and one hole trap, at rather low concentrations of the order of 1013 cm-3, have been revealed in the DLTS spectra measured under various bias conditions of Schottky diodes prepared on the as-grown CdTe layers. One of the electron traps has been attributed to electron states of dislocations on the ground of the logarithmic capture kinetics for capture of electrons into the trap states. The other three traps, displaying exponential capture kinetics, have been attributed to native point defects produced during the epitaxial growth of CdTe. The microscopic nature of the defects responsible for the traps is discussed taking into account recent results of first-principles calculations of the properties of dominant native defects in CdTe.

  2. Investigation of deep level defects in CdTe thin films

    SciTech Connect

    Shankar, H.; Castaldini, A.; Dauksta, E.; Medvid, A.; Cavallini, A.

    2014-02-21

    In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 °C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

  3. 14%-efficient flexible CdTe solar cells on ultra-thin glass substrates

    SciTech Connect

    Rance, W. L.; Burst, J. M.; Reese, M. O.; Gessert, T. A.; Metzger, W. K.; Barnes, T. M.; Meysing, D. M.; Wolden, C. A.; Garner, S.; Cimo, P.

    2014-04-07

    Flexible glass enables high-temperature, roll-to-roll processing of superstrate devices with higher photocurrents than flexible polymer foils because of its higher optical transmission. Using flexible glass in our high-temperature CdTe process, we achieved a certified record conversion efficiency of 14.05% for a flexible CdTe solar cell. Little has been reported on the flexibility of CdTe devices, so we investigated the effects of three different static bending conditions on device performance. We observed a consistent trend of increased short-circuit current and fill factor, whereas the open-circuit voltage consistently dropped. The quantum efficiency under the same static bend condition showed no change in the response. After storage in a flexed state for 24 h, there was very little change in device efficiency relative to its unflexed state. This indicates that flexible glass is a suitable replacement for rigid glass substrates, and that CdTe solar cells can tolerate bending without a decrease in device performance.

  4. Long carrier lifetimes in large-grain polycrystalline CdTe without CdCl2

    NASA Astrophysics Data System (ADS)

    Jensen, S. A.; Burst, J. M.; Duenow, J. N.; Guthrey, H. L.; Moseley, J.; Moutinho, H. R.; Johnston, S. W.; Kanevce, A.; Al-Jassim, M. M.; Metzger, W. K.

    2016-06-01

    For decades, polycrystalline CdTe thin films for solar applications have been restricted to grain sizes of microns or less whereas other semiconductors such as silicon and perovskites have produced devices with grains ranging from less than a micron to more than 1 mm. Because the lifetimes in as-deposited polycrystalline CdTe films are typically limited to less than a few hundred picoseconds, a CdCl2 treatment is generally used to improve the lifetime; but this treatment may limit the achievable hole density by compensation. Here, we establish methods to produce CdTe films with grain sizes ranging from hundreds of nanometers to several hundred microns by close-spaced sublimation at industrial manufacturing growth rates. Two-photon excitation photoluminescence spectroscopy shows a positive correlation of lifetime with grain size. Large-grain, as-deposited CdTe exhibits lifetimes exceeding 10 ns without Cl, S, O, or Cu. This uncompensated material allows dopants such as P to achieve a hole density of 1016 cm-3, which is an order of magnitude higher than standard CdCl2-treated devices, without compromising the lifetime.

  5. Characterization of Highly Efficient CdTe Thin Film Solar Cells by Low-Temperature Photoluminescence

    NASA Astrophysics Data System (ADS)

    Okamoto, Tamotsu; Matsuzaki, Yuichi; Amin, Nowshad; Yamada, Akira; Konagai, Makoto

    1998-07-01

    Highly efficient CdTe thin film solar cells prepared by close-spaced sublimation (CSS) method with a glass/ITO/CdS/CdTe/Cu-doped carbon/Ag structure were characterized by low-temperature photoluminescence (PL) measurement. A broad 1.42 eV band probably due to VCd Cl defect complexes appeared as a result of CdCl2 treatment. CdS/CdTe junction PL revealed that a CdSxTe1-x mixed crystal layer was formed at the CdS/CdTe interface region during the deposition of CdTe by CSS and that CdCl2 treatment promoted the formation of the mixed crystal layer. Furthermore, in the PL spectra of the heat-treated CdTe after screen printing of the Cu-doped carbon electrode, a neutral-acceptor bound exciton (ACu0, X) line at 1.590 eV was observed, suggesting that Cu atoms were incorporated into CdTe as effective acceptors after the heat treatment.

  6. Static atomic displacements in a CdTe epitaxial layer on a GaAs substrate

    NASA Astrophysics Data System (ADS)

    Horning, R. D.; Staudenmann, J.-L.

    1987-05-01

    A (001)CdTe epitaxial layer on a (001)GaAs substrate was studied by x-ray diffraction between 10 and 360 K. The CdTe growth took place at 380 °C in a vertical gas flow metalorganic chemical vapor deposition reactor. Lattice parameters and integrated intensities of both the substrate and the epitaxial layer using the (00l) and (hhh) Bragg reflections reveal three important features. Firstly, the GaAs substrate does not exhibit severe strain after deposition and it is as perfect as a bulk GaAs. Secondly, the CdTe unit cell distorts tetragonally with a⊥>a∥ below 300 K. The decay of the (00l) reflection intensities as a function of the temperature yields a Debye temperature of 142 K, the same value as for bulk CdTe. Thirdly, a temperature-dependent isotropic static displacement of the Cd and the Te atoms is introduced to account for the anomalous behavior of the (hhh) intensities.

  7. The role of substrate surface alteration in the fabrication of vertically aligned CdTe nanowires.

    PubMed

    Neretina, S; Hughes, R A; Devenyi, G A; Sochinskii, N V; Preston, J S; Mascher, P

    2008-05-01

    Previously we have described the deposition of vertically aligned wurtzite CdTe nanowires derived from an unusual catalytically driven growth mode. This growth mode could only proceed when the surface of the substrate was corrupted with an alcohol layer, although the role of the corruption was not fully understood. Here, we present a study detailing the remarkable role that this substrate surface alteration plays in the development of CdTe nanowires; it dramatically improves the size uniformity and largely eliminates lateral growth. These effects are demonstrated to arise from the altered surface's ability to limit Ostwald ripening of the catalytic seed material and by providing a surface unable to promote the epitaxial relationship needed to sustain a lateral growth mode. The axial growth of the CdTe nanowires is found to be exclusively driven through the direct impingement of adatoms onto the catalytic seeds leading to a self-limiting wire height associated with the sublimation of material from the sidewall facets. The work presented furthers the development of the mechanisms needed to promote high quality substrate-based vertically aligned CdTe nanowires. With our present understanding of the growth mechanism being a combination of selective area epitaxy and a catalytically driven vapour-liquid-solid growth mode, these results also raise the intriguing possibility of employing this growth mode in other material systems in an effort to produce superior nanowires.

  8. Nanoscale Imaging of Band Gap and Defects in Polycrystalline CdTe Photovoltaic Devices

    NASA Astrophysics Data System (ADS)

    Zhitenev, Nikolai; Yoon, Yohan; Chae, Jungseok; Katzenmeyer, Aaron; Yoon, Heayoung; An, Sangmin; Shumacher, Joshua; Centrone, Andrea

    To further increase the power efficiency of polycrystalline thin film photovoltaic (PV) technology, a detailed understanding of microstructural properties of the devices is required. In this work, we investigate the microstructure of CdTe PV devices using two optical spectroscopies. Sub-micron thickness lamella samples were cut out from a PV device, either in cross-section or in-plane, by focused ion beam. The first technique is the photothermal induced resonance (PTIR) used to obtain absorption spectra over a broad range of wavelengths. In PTIR, a wavelength tunable pulsed laser is combined with an atomic force microscope to detect the local thermal expansion of lamella CdTe sample induced by light absorption. The second technique based on a near-field scanning optical microscope maps the local absorption at fixed near-IR wavelengths with energies at or below CdTe band-gap energy. The variation of the band gap throughout the CdTe absorber determined from PTIR spectra is ~ 20 meV. Both techniques detect strong spatial variation of shallow defects over different grains. The spatial distribution of mid-gap defects appears to be more uniform. The resolution, the sensitivity and the applicability of these two approaches are compared.

  9. Characterization of a high-purity germanium detector for small-animal SPECT.

    PubMed

    Johnson, Lindsay C; Campbell, Desmond L; Hull, Ethan L; Peterson, Todd E

    2011-09-21

    We present an initial evaluation of a mechanically cooled, high-purity germanium double-sided strip detector as a potential gamma camera for small-animal SPECT. It is 90 mm in diameter and 10 mm thick with two sets of 16 orthogonal strips that have a 4.5 mm width with a 5 mm pitch. We found an energy resolution of 0.96% at 140 keV, an intrinsic efficiency of 43.3% at 122 keV and a FWHM spatial resolution of approximately 1.5 mm. We demonstrated depth-of-interaction estimation capability through comparison of pinhole acquisitions with a point source on and off axes. Finally, a flood-corrected flood image exhibited a strip-level uniformity of less than 1%. This high-purity germanium offers many desirable properties for small-animal SPECT.

  10. Characterization of a high-purity germanium detector for small-animal SPECT

    PubMed Central

    Johnson, Lindsay C; Campbell, Desmond L; Hull, Ethan L; Peterson, Todd E

    2011-01-01

    We present an initial evaluation of a mechanically-cooled, high-purity germanium double-sided strip detector as a potential gamma camera for small-animal SPECT. It is 90 mm in diameter and 10 mm thick with two sets of 16 orthogonal strips that have a 4.5 mm width with a 5 mm pitch. We found an energy resolution of 0.96% at 140 keV, an intrinsic efficiency of 43.3% at 122 keV and a FWHM spatial resolution of approximately 1.5 mm. We demonstrated depth-of-interaction estimation capability through comparison of pinhole acquisitions with a point source on and off axis. Finally, a flood-corrected-flood image exhibited a strip-level uniformity of less than 1%. This high-purity germanium offers many desirable properties for small-animal SPECT. PMID:21852723

  11. Study of spatial resolution of proton computed tomography using a silicon strip detector

    NASA Astrophysics Data System (ADS)

    Saraya, Y.; Izumikawa, T.; Goto, J.; Kawasaki, T.; Kimura, T.

    2014-01-01

    Proton computed tomography (CT) is an imaging technique using a high-energy proton beam penetrating the human body and shows promise for improving the quality of cancer therapy with high-energy particle beams because more accurate electron density distribution measurements can be achieved with proton CT. The deterioration of the spatial resolution owing to multiple Coulomb scattering is, however, a crucial issue. The control of the radiation dose and the long exposure time are also problems to be solved. We have developed a prototype system for proton CT with a silicon strip detector and performed a beam test for imaging. The distribution of the electron density has been measured precisely. We also demonstrated an improvement in spatial resolution by reconstructing the proton trajectory. A spatial resolution of 0.45 mm is achieved for a 25-mm-thick polyethylene object. This will be a useful result for upgrading proton CT application for practical use.

  12. MCNPX Simulation Study of STRAW Neutron Detectors

    SciTech Connect

    Sanjoy Mukhopadhyay, Richard Maurer, Stephen Mitchell

    2010-01-08

    A novel prototype fission meter is being designed at National Security Technologies, LLC, using a thin uniform coating (only 1 micron thick) of {sup 10}B as a neutron converter inside a large array of thin (4 mm diameter) copper tubes. The copper tubes are only 2 mils thick, and each holds the stretched anode wire under tension and high voltage. The tubes are filled with proportional counter gas (a mixture of 90%/10% of Ar/CO{sub 2}). The tubes operate in proportional counter mode and attract mobile charged particles ({alpha}'s) created in the nuclear interaction {sup 10}B(n, {sup 4}He){sup 7}Li. However, a single tube has about 1/7th the sensitivity of a {sup 3}He tube. Modeling is required to determine if enough such tubes could be placed in a neutron detection assembly of the current size to give comparable sensitivity to {sup 3}He. Detectors lined with {sup 10}B lie between {sup 3}He and {sup 10}BF{sub 3} proportional counters and fission chambers in terms of neutron detection efficiency and gamma ray insensitivity. The mean free path of thermal neutrons in {sup 10}B is about 18 {micro}m. It takes about 60 {micro}m of {sup 10}B layer to completely stop thermal neutrons, but the energetic {alpha}-particles generated in the reaction have a range of only 3.3 {micro}m in {sup 10}B environment - hence the thin layer of boron coating on the copper tube. The prototype design is shown in Figure 1. It consists of two panels of three staggered rows of 500-mm-long, 4-mm-diameter straws, with 20 in each row, embedded in 30-mm-thick high density polyethylene (HDPE). The project demonstrates a new application of thin neutron and gamma converter technique (1 micron thin {sup 10}B coated copper tube). It exploits fast timing from multiple straw detectors to count multiplicity of both gamma and neutrons from fissioning materials. The objective is to find a near-term replacement of {sup 3}He gas in neutron detection and measurement (with a very large neutron detection area). All

  13. Synthesis and optical characterization of nanocrystalline CdTe thin films

    NASA Astrophysics Data System (ADS)

    Al-Ghamdi, A. A.; Khan, Shamshad A.; Nagat, A.; Abd El-Sadek, M. S.

    2010-11-01

    From several years the study of binary compounds has been intensified in order to find new materials for solar photocells. The development of thin film solar cells is an active area of research at this time. Much attention has been paid to the development of low cost, high efficiency thin film solar cells. CdTe is one of the suitable candidates for the production of thin film solar cells due to its ideal band gap, high absorption coefficient. The present work deals with thickness dependent study of CdTe thin films. Nanocrystalline CdTe bulk powder was synthesized by wet chemical route at pH≈11.2 using cadmium chloride and potassium telluride as starting materials. The product sample was characterized by transmission electron microscope, X-ray diffraction and scanning electron microscope. The structural characteristics studied by X-ray diffraction showed that the films are polycrystalline in nature. CdTe thin films with thickness 40, 60, 80 and 100 nm were prepared on glass substrates by using thermal evaporation onto glass substrate under a vacuum of 10 -6 Torr. The optical constants (absorption coefficient, optical band gap, refractive index, extinction coefficient, real and imaginary part of dielectric constant) of CdTe thin films was studied as a function of photon energy in the wavelength region 400-2000 nm. Analysis of the optical absorption data shows that the rule of direct transitions predominates. It has been found that the absorption coefficient, refractive index ( n) and extinction coefficient ( k) decreases while the values of optical band gap increase with an increase in thickness from 40 to 100 nm, which can be explained qualitatively by a thickness dependence of the grain size through decrease in grain boundary barrier height with grain size.

  14. Hardware simulator of Caliste-SO detectors for STIX instrument

    NASA Astrophysics Data System (ADS)

    Podgórski, P.; Ścisłowski, D.; Kowaliński, M.; Mrozek, T.; Steślicki, M.; Barylak, J.; Barylak, A.; Sylwester, J.; Krucker, S.; Hurford, G. J.; Arnold, N. G.; Orleański, P.; Meuris, A.; Limousin, O.; Gevin, O.; Grimm, O.; Etesi, L.; Hochmuth, N.; Battaglia, M.; Csillaghy, A.; Kienreich, I. W.; Veronig, A.; Bloomfield, D. Shaun; Byrne, M.; Massone, A. M.; Piana, M.; Giordano, S.; Skup, K. R.; Graczyk, R.; Michalska, M.; Nowosielski, W.; Cichocki, A.; Mosdorf, M.

    2013-10-01

    The Spectrometer Telescope for Imaging X-rays (STIX) is one of 10 instruments on-board Solar Orbiter mission of the European Space Agency (ESA) scheduled to be launched in 2017. STIX is aimed to provide imaging spectroscopy of solar thermal and non-thermal hard X-ray emissions from 4 keV to 150 keV using a Fourier-imaging technique. The instrument employs a set of tungsten grids in front of 32 pixelized CdTe detectors. These detectors are source of data collected and analyzed in real time by Instrument Data Processing Unit (IDPU). In order to support development and implementation of on-board algorithms a dedicated detector hardware simulator is designed and manufactured as a part of Electrical Ground Support Equipment (EGSE) for STIX instrument. Complementary to the hardware simulator is data analysis software which is used to generate input data and to analyze output data. The simulator will allow sending strictly defined data from all detectors' pixels at the input of the IDPU for further analysis of instrument response. Particular emphasis is given here to the simulator hardware design.

  15. Development of an ASIC for Si/CdTe detectors in a radioactive substance visualizing system

    NASA Astrophysics Data System (ADS)

    Harayama, Atsushi; Takeda, Shin`ichiro; Sato, Goro; Ikeda, Hirokazu; Watanabe, Shin; Takahashi, Tadayuki

    2014-11-01

    We report on the recent development of a 64-channel analog front-end ASIC for a new gamma-ray imaging system designed to visualize radioactive substances. The imaging system employs a novel Compton camera which consists of silicon (Si) and cadmium telluride (CdTe) detectors. The ASIC is intended for the readout of pixel/pad detectors utilizing Si/CdTe as detector materials, and covers a dynamic range up to 1.4 MeV. The readout chip consists of 64 identical signal channels and was implemented with X-FAB 0.35 μm CMOS technology. Each channel contains a charge-sensitive amplifier, a pole-zero cancellation circuit, a low-pass filter, a comparator, and a sample-hold circuit, along with a Wilkinson-type A-to-D converter. We observed an equivalent noise charge of ~500 e- and a noise slope of ~5 e-/pF (r.m.s.) with a power consumption of 2.1 mW per channel. The chip works well when connected to Schottky CdTe diodes, and delivers spectra with good energy resolution, such as ~12 keV (FWHM) at 662 keV and ~24 keV (FWHM) at 1.33 MeV.

  16. Charge Loss and Charge Sharing Measurements for Two Different Pixelated Cadmium-Zinc-Telluride Detectors

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Sharma, Dharma; Ramsey, Brian; Seller, Paul

    2003-01-01

    As part of ongoing research at Marshall Space Flight Center, Cadmium-Zinc- Telluride (CdZnTe) pixilated detectors are being developed for use at the focal plane of the High Energy Replicated Optics (HERO) telescope. HERO requires a 64x64 pixel array with a spatial resolution of around 200 microns (with a 6m focal length) and high energy resolution (< 2% at 60keV). We are currently testing smaller arrays as a necessary first step towards this goal. In this presentation, we compare charge sharing and charge loss measurements between two devices that differ both electronically and geometrically. The first device consists of a 1-mm-thick piece of CdZnTe that is sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). The signal is read out using discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe that is sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). Instead of using discrete preamplifiers, the crystal is bonded to an ASIC that provides all of the front-end electronics to each of the 256 pixels. what degree the bias voltage (i.e. the electric field) and hence the drift and diffusion coefficients affect our measurements. Further, we compare the measured results with simulated results and discuss to

  17. The UCSD high energy X-ray timing experiment cosmic ray particle anticoincidence detector

    NASA Technical Reports Server (NTRS)

    Hink, P. L.; Rothschild, R. E.; Pelling, M. R.; Macdonald, D. R.; Gruber, D. E.

    1991-01-01

    The HEXTE, part of the X-Ray Timing Explorer (XTE), is designed to make high sensitivity temporal and spectral measurements of X-rays with energies between 15 and 250 keV using NaI/CsI phoswich scintillation counters. To achieve the required sensitivity it is necessary to provide anticoincidence of charged cosmic ray particles incident upon the instrument, some of which interact to produce background X-rays. The proposed cosmic ray particle anticoincidence shield detector for HEXTE uses a novel design based on plastic scintillators and wavelength-shifter bars. It consists of five segments, each with a 7 mm thick plastic scintillator, roughly 50 cm x 50 cm in size, coupled to two wavelength-shifter bars viewed by 1/2 inch photomultiplier tubes. These segments are configured into a five-sided, box-like structure around the main detector system. Results of laboratory testing of a model segment, and calculations of the expected performance of the flight segments and particle anticoincidence detector system are presented to demonstrate that the above anticoincidence detector system satisfies its scientific requirements.

  18. CdZnTe x-ray detector for 30 {endash} 100 keV energy

    SciTech Connect

    Yoo, S.-S.; Rodricks, B.; Shastri, S.D.; Montano, P.A.

    1996-07-01

    High-pressure-Bridgman (HPB) grown CdZnTe x-ray detectors 1.25-1.7 mm thick were tested using monochromatic x-rays of 30 to 100 keV generated by a high energy x-ray generator. The results were compared with a commercially available 5 cm thick NaI detector. A linear dependence of the counting rate versus the x-ray generator tube current was observed at 58.9 keV. The measured pulse height of the photopeaks shows a linear dependence on energy. Electron and hole mobility-lifetime products ({mu}{tau}) were deduced by fitting bias dependent photopeak channel numbers at 30 keV x-ray energy. Values of 2 x 10{sup -3} cm{sup 2}/V and 2 x 10{sup -4}cm{sup 2}/V were obtained for {mu}{tau}{sub e} and {mu}{tau}{sub p}, respectively. The detector efficiency of CdZnTe at a 100 V bias was as high as, or higher than 90 % compared to a NaI detector. At x-ray energies higher than 70 keV, the detection efficiency becomes a dominant factor and decreases to 75 % at 100 keV.

  19. First-principles study of back-contact effects on CdTe thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Du, Mao-Hua

    2009-11-01

    Forming a chemically stable low-resistance back contact for CdTe thin-film solar cells is critically important to the cell performance. This paper reports theoretical study of the effects of the back-contact material, Sb2Te3 , on the performance of the CdTe solar cells. First-principles calculations show that Sb impurities in p -type CdTe are donors and can diffuse with low diffusion barrier. There properties are clearly detrimental to the solar-cell performance. The Sb segregation into the grain boundaries may be required to explain the good efficiencies for the CdTe solar cells with Sb2Te3 back contacts.

  20. Modeling Cu Migration in CdTe Solar Cells Under Device-Processing and Long-Term Stability Conditions: Preprint

    SciTech Connect

    Teeter, G.; Asher, S.

    2008-05-01

    An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devices during device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe photovoltaic devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.

  1. Modeling Cu Migration in CdTe Solar Cells Under Device-Processing and Long-Term Stability Conditions (Poster)

    SciTech Connect

    Teeter, G.; Asher, S.

    2008-05-01

    An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devices during device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe PV devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.

  2. One-Dimensional Reaction-Diffusion Simulation of Cu Migration in Polycrystalline CdTe Solar Cells

    SciTech Connect

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christain

    2014-06-13

    In this work, we report on developing 1D reaction-diffusion solver to understand the kinetics of p-type doping formation in CdTe absorbers and to shine some light on underlying causes of metastabilities observed in CdTe PV devices. Evolution of intrinsic and Cu-related defects in CdTe solar cell has been studied in time-space domain self-consistently with free carrier transport and Poisson equation. Resulting device performance was simulated as a function of Cu diffusion anneal time showing pronounced effect the evolution of associated acceptor and donor states can cause on device characteristics. Although 1D simulation has intrinsic limitations when applied to poly-crystalline films, the results suggest strong potential of the approach in better understanding of the performance and metastabilities of CdTe photovoltaic device.

  3. Magnetron sputtering based direct fabrication of three dimensional CdTe hierarchical nanotrees exhibiting stable superhydrophobic property

    NASA Astrophysics Data System (ADS)

    Luo, Bingwei; Deng, Yuan; Wang, Yao; Shi, Yongming; Cao, Lili; Zhu, Wei

    2013-09-01

    Three dimensional CdTe hierarchical nanotrees are initially prepared by a simple one-step magnetron sputtering method without any templates or additives. The CdTe hierarchical nanotrees are constructed by the spear-like vertical trunks and horizontal branches with the diameters of about 100 nm at bottom and became cuspidal on the top. The particular nanostructure imparts these materials superhydrophobic property, and this property can be preserved after placing in air for 90 days, and is stable even after the ultraviolet light and X-ray irradiation, respectively. This study provides a simple strategy to achieve superhydrophobic properties for CdTe materials at lower temperature, which opens a new potential for CdTe solar cell with self-cleaning property.

  4. Growth of CdTe on Si(100) surface by ionized cluster beam technique: Experimental and molecular dynamics simulation

    NASA Astrophysics Data System (ADS)

    Araghi, Houshang; Zabihi, Zabiholah; Nayebi, Payman; Ehsani, Mohammad Mahdi

    2016-10-01

    II-VI semiconductor CdTe was grown on the Si(100) substrate surface by the ionized cluster beam (ICB) technique. In the ICB method, when vapors of solid materials such as CdTe were ejected through a nozzle of a heated crucible into a vacuum region, nanoclusters were created by an adiabatic expansion phenomenon. The clusters thus obtained were partially ionized by electron bombardment and then accelerated onto the silicon substrate at 473 K by high potentials. The cluster size was determined using a retarding field energy analyzer. The results of X-ray diffraction measurements indicate the cubic zinc blende (ZB) crystalline structure of the CdTe thin film on the silicon substrate. The CdTe thin film prepared by the ICB method had high crystalline quality. The microscopic processes involved in the ICB deposition technique, such as impact and coalescence processes, have been studied in detail by molecular dynamics (MD) simulation.

  5. A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

    NASA Astrophysics Data System (ADS)

    Liu, Yan; Shen, Qihui; Yu, Dongdong; Shi, Weiguang; Li, Jixue; Zhou, Jianguang; Liu, Xiaoyang

    2008-06-01

    One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

  6. Coexistence of optically active radial and axial CdTe insertions in single ZnTe nanowire.

    PubMed

    Wojnar, P; Płachta, J; Zaleszczyk, W; Kret, S; Sanchez, Ana M; Rudniewski, R; Raczkowska, K; Szymura, M; Karczewski, G; Baczewski, L T; Pietruczik, A; Wojtowicz, T; Kossut, J

    2016-03-14

    We report on the growth, cathodoluminescence and micro-photoluminescence of individual radial and axial CdTe insertions in ZnTe nanowires. In particular, the cathodoluminescence technique is used to determine the position of each emitting object inside the nanowire. It is demonstrated that depending on the CdTe deposition temperature, one can obtain an emission either from axial CdTe insertions only, or from both, radial and axial heterostructures, simultaneously. At 350 °C CdTe grows only axially, whereas at 310 °C and 290 °C, there is also significant deposition on the nanowire sidewalls resulting in radial core/shell heterostructures. The presence of Cd atoms on the sidewalls is confirmed by energy dispersive X-ray spectroscopy. Micro-photoluminescence study reveals a strong linear polarization of the emission from both types of heterostructures in the direction along the nanowire axis.

  7. Influence of Kilo-Electron Oxygen Ion Irradiation on Structural, Electrical and Optical Properties of CdTe Thin Films

    NASA Astrophysics Data System (ADS)

    Honey, Shehla; Thema, F. T.; Bhatti, M. T.; Ishaq, A.; Naseem, Shahzad; Maaza, M.

    2016-09-01

    In this paper, effect of oxygen (O+) ion irradiation on the properties of polycrystalline cubic structure CdTe thin films has been investigated. CdTe thin films were irradiated with O+ ions of energy 80keV at different fluence ranging from 1×1015 to 5×1016 ion/cm2 at room temperature. At 1×1015 ion/cm2 O+ ions fluence, the CdTe structure was maintained while XRD peaks of cubic phase were shifted toward lower angles. At 5×1016 ion/cm2 O+ ions fluence, cubic structure of CdTe thin films was transformed into hexagonal structure. In addition, electrical resistivity and optical bandgap were decreased with increasing O+ ion beam irradiation.

  8. A new method for charge-loss correction of room-temperature semiconductor detectors using digital trapezoidal pulse shaping

    NASA Astrophysics Data System (ADS)

    Nakhostin, M.; Veeramani, P.

    2012-06-01

    It is well known that semiconductor detectors operating at room temperature can be read out at high rate, with good noise performance and low sensitivity to ballistic deficit, by using trapezoidal (flat-topped) pulse shaping. Nevertheless, the energy resolution of these detectors is also affected by chargetrapping inside the detector crystal, which can not be compensated by the standard trapezoidal pulse shaping. A new digital algorithm based on trapezoidal pulse shaping, to compensate for the charge-trapping effect while minimizing the electronic noise, has been developed. The application of the pulse processing algorithm to a 5 × 5 × 1 mm3 planar Schottky CdTe detector leads to an energy resolution of 1.15% FWHM at 662 keV at room temperature, which is considerably superior to the results of the standard pulse filters.

  9. Process Development for High Voc CdTe Solar Cells: Phase I, Annual Technical Report, October 2005 - September 2006

    SciTech Connect

    Ferekides, C. S.; Morel, D. L.

    2007-04-01

    The focus of this project is the open-circuit voltage of the CdTe thin-film solar cell. CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, but the efficiency of the CdTe solar cell has been stagnant for the last few years. At the manufacturing front, the CdTe technology is fast paced and moving forward with U.S.-based First Solar LLC leading the world in CdTe module production. To support the industry efforts and continue the advancement of this technology, it will be necessary to continue improvements in solar cell efficiency. A closer look at the state-of-the-art performance levels puts the three solar cell efficiency parameters of short-circuit current density (JSC), open-circuit voltage (VOC), and fill factor (FF) in the 24-26 mA/cm2, 844?850 mV, and 74%-76% ranges respectively. During the late 1090s, efforts to improve cell efficiency were primarily concerned with increasing JSC, simply by using thinner CdS window layers to enhance the blue response (<510 nm) of the CdTe cell. These efforts led to underscoring the important role 'buffers' (or high-resistivity transparent films) play in CdTe cells. The use of transparent bi-layers (low-p/high-p) as the front contact is becoming a 'standard' feature of the CdTe cell.

  10. Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing

    SciTech Connect

    Albin, D.; del Cueto, J.

    2011-03-01

    In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

  11. Evaluation of toxic effects of CdTe quantum dots on the reproductive system in adult male mice.

    PubMed

    Li, Xiaohui; Yang, Xiangrong; Yuwen, Lihui; Yang, Wenjing; Weng, Lixing; Teng, Zhaogang; Wang, Lianhui

    2016-07-01

    Fluorescent quantum dots (QDs) are highly promising nanomaterials for various biological and biomedical applications because of their unique optical properties, such as robust photostability, strong photoluminescence, and size-tunable fluorescence. Several studies have reported the in vivo toxicity of QDs, but their effects on the male reproduction system have not been examined. In this study, we investigated the reproductive toxicity of cadmium telluride (CdTe) QDs at a high dose of 2.0 nmol per mouse and a low dose of 0.2 nmol per mouse. Body weight measurements demonstrated there was no overt toxicity for both dose at day 90 after exposure, but the high dose CdTe affected body weight up to 15 days after exposure. CdTe QDs accumulated in the testes and damaged the tissue structure for both doses on day 90. Meanwhile, either of two CdTe QDs treatments did not significantly affect the quantity of sperm, but the high dose CdTe significantly decreased the quality of sperm on day 60. The serum levels of three major sex hormones were also perturbed by CdTe QDs treatment. However, the pregnancy rate and delivery success of female mice that mated with the treated male mice did not differ from those mated with untreated male mice. These results suggest that CdTe QDs can cause testes toxicity in a dose-dependent manner. The low dose of CdTe QDs is relatively safe for the reproductive system of male mice. Our preliminary result enables better understanding of the reproductive toxicity induced by cadmium-containing QDs and provides insight into the safe use of these nanoparticles in biological and environmental systems.

  12. Solution-Processed, Ultrathin Solar Cells from CdCl3(-)-Capped CdTe Nanocrystals: The Multiple Roles of CdCl3(-) Ligands.

    PubMed

    Zhang, Hao; Kurley, J Matthew; Russell, Jake C; Jang, Jaeyoung; Talapin, Dmitri V

    2016-06-22

    Solution-processed CdTe solar cells using CdTe nanocrystal (NC) ink may offer an economically viable route for large-scale manufacturing. Here we design a new CdCl3(-)-capped CdTe NC ink by taking advantage of novel surface chemistry. In this ink, CdCl3(-) ligands act as surface ligands, sintering promoters, and dopants. Our solution chemistry allows obtaining very thin continuous layers of high-quality CdTe which is challenging for traditional vapor transport methods. Using benign solvents, in air, and without additional CdCl2 treatment, we obtain a well-sintered CdTe absorber layer from the new ink and demonstrate thin-film solar cells with power conversion efficiency over 10%, a record efficiency for sub-400 nm thick CdTe absorber layer. PMID:27269672

  13. Detector simulation needs for detector designers

    SciTech Connect

    Hanson, G.G.

    1987-11-01

    Computer simulation of the components of SSC detectors and of the complete detectors will be very important for the designs of the detectors. The ratio of events from interesting physics to events from background processes is very low, so detailed understanding of detector response to the backgrounds is needed. Any large detector for the SSC will be very complex and expensive and every effort must be made to design detectors which will have excellent performance and will not have to undergo major rebuilding. Some areas in which computer simulation is particularly needed are pattern recognition in tracking detectors and development of shower simulation code which can be trusted as an aid in the design and optimization of calorimeters, including their electron identification performance. Existing codes require too much computer time to be practical and need to be compared with test beam data at energies of several hundred GeV. Computer simulation of the processing of the data, including electronics response to the signals from the detector components, processing of the data by microprocessors on the detector, the trigger, and data acquisition will be required. In this report we discuss the detector simulation needs for detector designers.

  14. Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2016-09-01

    Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

  15. Liver Toxicity of Cadmium Telluride Quantum Dots (CdTe QDs) Due to Oxidative Stress in Vitro and in Vivo

    PubMed Central

    Zhang, Ting; Hu, Yuanyuan; Tang, Meng; Kong, Lu; Ying, Jiali; Wu, Tianshu; Xue, Yuying; Pu, Yuepu

    2015-01-01

    With the applications of quantum dots (QDs) expanding, many studies have described the potential adverse effects of QDs, yet little attention has been paid to potential toxicity of QDs in the liver. The aim of this study was to investigate the effects of cadmium telluride (CdTe) QDs in mice and murine hepatoma cells alpha mouse liver 12 (AML 12). CdTe QDs administration significantly increased the level of lipid peroxides marker malondialdehyde (MDA) in the livers of treated mice. Furthermore, CdTe QDs caused cytotoxicity in AML 12 cells in a dose- and time-dependent manner, which was likely mediated through the generation of reactive oxygen species (ROS) and the induction of apoptosis. An increase in ROS generation with a concomitant increase in the gene expression of the tumor suppressor gene p53, the pro-apoptotic gene Bcl-2 and a decrease in the anti-apoptosis gene Bax, suggested that a mitochondria mediated pathway was involved in CdTe QDs’ induced apoptosis. Finally, we showed that NF-E2-related factor 2 (Nrf2) deficiency blocked induced oxidative stress to protect cells from injury induced by CdTe QDs. These findings provide insights into the regulatory mechanisms involved in the activation of Nrf2 signaling that confers protection against CdTe QDs-induced apoptosis in hepatocytes. PMID:26404244

  16. (Cd,Mn)Te detectors for characterization of x-ray emissions generated during laser-driven fusion experiments

    SciTech Connect

    Cross,A.S.; Knauer, J. P.; Mycielski, A.; Kochanowska, D.; Wiktowska-Baran, M.; Jakiela, R.; Domagala, J.; Cui, Y.; James, R.; Sobolewski, R.

    2008-10-19

    We present our measurements of (Cd,Mn)Te photoconductive detectors (PCDs), fabricated for the goal of measuring both the temporal and spectral dependences of X-ray emissions generated from laser-illuminated targets during the inertial confinement fusion experiments. Our Cd{sub 1-x}Mn{sub x}Te (x = 0.05) single crystals, doped with V, were grown using a vertical Bridgman method and, subsequently, annealed in Cd for the highest resistivity ({approx}10{sup 10} {Omega}cm) and a good mobility-lifetime product ({approx}10{sup -3} cm{sup 2}/V). The 1-mm- and 2.3-mm-thick detectors were placed in the same housing as two 1-mm-thick diamond PCDs. All devices were pre-screened by a 7.6-mm-thick Be X-ray filter with a frequency cutoff of 1 keV. The incident shots from the OMEGA laser were 1-ns-long square pulses with energies ranging from 2.3 kJ to 22.6 kJ, and the PCDs were biased with 5000 V/cm. The response amplitudes and rise times of our (Cd,Mn)Te PCDs were comparable with the diamond detector performance, while the decay times were 4 to 10 times longer and in the 2-5 ns range. We observed two X-ray emission events separated by 1.24 ns. The first was identified as caused by heating of the target and creating a hot corona, while the second one was from the resulting compressed core. For comparison purposes, our testing was performed using {approx}1 keV X-ray photons, optimal for the diamond PCD. According to the presented simulations, however, at X-ray energies >10 keV diamond absorption efficiency drops to <50%, whereas for (Cd,Mn)Te the drop occurs at {approx}100 keV with near perfect, 100% absorption, up to 50 keV.

  17. Diamond detector in absorbed dose measurements in high-energy linear accelerator photon and electron beams.

    PubMed

    Ravichandran, Ramamoorthy; Binukumar, John Pichy; Al Amri, Iqbal; Davis, Cheriyathmanjiyil Antony

    2016-01-01

    Diamond detectors (DD) are preferred in small field dosimetry of radiation beams because of small dose profile penumbras, better spatial resolution, and tissue-equivalent properties. We investigated a commercially available 'microdiamond' detector in realizing absorbed dose from first principles. A microdiamond detector, type TM 60019 with tandem electrometer is used to measure absorbed doses in water, nylon, and PMMA phantoms. With sensitive volume 0.004 mm3, radius 1.1mm, thickness 1 x10(-3) mm, the nominal response is 1 nC/Gy. It is assumed that the diamond detector could collect total electric charge (nC) developed during irradiation at 0 V bias. We found that dose rate effect is less than 0.7% for changing dose rate by 500 MU/min. The reproducibility in obtaining readings with diamond detector is found to be ± 0.17% (1 SD) (n = 11). The measured absorbed doses for 6 MV and 15 MV photons arrived at using mass energy absorption coefficients and stop-ping power ratios compared well with Nd, water calibrated ion chamber measured absorbed doses within 3% in water, PMMA, and nylon media. The calibration factor obtained for diamond detector confirmed response variation is due to sensitivity due to difference in manufacturing process. For electron beams, we had to apply ratio of electron densities of water to carbon. Our results qualify diamond dosimeter as a transfer standard, based on long-term stability and reproducibility. Based on micro-dimensions, we recommend these detectors for pretreatment dose verifications in small field irradiations like stereotactic treatments with image guidance. PMID:27074452

  18. Spiral silicon drift detectors

    SciTech Connect

    Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Lutz, G.; Kemmer, J.; Prechtel, U.; Ziemann, T.

    1988-01-01

    An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs.

  19. CdTe quantum dots with daunorubicin induce apoptosis of multidrug-resistant human hepatoma HepG2/ADM cells: in vitro and in vivo evaluation

    NASA Astrophysics Data System (ADS)

    Zhang, Gen; Shi, Lixin; Selke, Matthias; Wang, Xuemei

    2011-06-01

    Cadmium telluride quantum dots (Cdte QDs) have received significant attention in biomedical research because of their potential in disease diagnosis and drug delivery. In this study, we have investigated the interaction mechanism and synergistic effect of 3-mercaptopropionic acid-capped Cdte QDs with the anti-cancer drug daunorubicin (DNR) on the induction of apoptosis using drug-resistant human hepatoma HepG2/ADM cells. Electrochemical assay revealed that Cdte QDs readily facilitated the uptake of the DNR into HepG2/ADM cells. Apoptotic staining, DNA fragmentation, and flow cytometry analysis further demonstrated that compared with Cdte QDs or DNR treatment alone, the apoptosis rate increased after the treatment of Cdte QDs together with DNR in HepG2/ADM cells. We observed that Cdte QDs treatment could reduce the effect of P-glycoprotein while the treatment of Cdte QDs together with DNR can clearly activate apoptosis-related caspases protein expression in HepG2/ADM cells. Moreover, our in vivo study indicated that the treatment of Cdte QDs together with DNR effectively inhibited the human hepatoma HepG2/ADM nude mice tumor growth. The increased cell apoptosis rate was closely correlated with the enhanced inhibition of tumor growth in the studied animals. Thus, Cdte QDs combined with DNR may serve as a possible alternative for targeted therapeutic approaches for some cancer treatments.

  20. MBE HgCdTe heterostructure detectors

    NASA Technical Reports Server (NTRS)

    Schulman, Joel N.; Wu, Owen K.

    1990-01-01

    HgCdTe has been the mainstay for medium (3 to 5 micron) and long (10 to 14 micron) wavelength infrared detectors in recent years. Conventional growth and processing techniques are continuing to improve the material. However, the additional ability to tailor composition and placement of doped layers on the tens of angstroms scale using molecular beam epitaxy (MBE) provides the opportunity for new device physics and concepts to be utilized. MBE-based device structures to be discussed here can be grouped into two categories: tailored conventional structures and quantum structures. The tailored conventional structures are improvements on familiar devices, but make use of the ability to create layers of varying composition, and thus band gap, at will. The heterostructure junction can be positioned independently of doping p-n junctions. This allows the small band gap region in which the absorption occurs to be separated from a larger band gap region in which the electric field is large and where unwanted tunneling can occur. Data from hybrid MBE/liquid phase epitaxy (LPE)/bulk structures are given. Quantum structures include the HgTe-CdTe superlattice, in which the band gap and transport can be controlled by alternating thin layers (tens of angstroms thick) of HgTe and CdTe. The superlattice has been shown to exhibit behavior which is non-alloy like, including very high hole mobilities, two-dimensional structure in the absorption coefficient, resonant tunneling, and anisotropic transport.

  1. Effect of surface preparation on the 77 K photoluminescence of CdTe

    NASA Astrophysics Data System (ADS)

    Myers, T. H.; Schetzina, J. F.; Edwards, S. T.; Schreiner, A. F.

    1983-07-01

    Photoluminescence spectra were obtained at 77 K for three undoped CdTe single crystal specimens whose surfaces were prepared by mechanical, conventional chemimechanical, and modified hydroplane polishing techniques, respectively. The hydroplane polished sample was found to be a much brighter source of photoluminescence than either of the other two specimens. In addition, hydroplane polishing produced a photoluminescence spectrum in which nearly all of the emission occurred in a band centered at 1.58 eV rather than in the well-known defect band at 1.42 eV. We interpret these results as providing evidence that hydroplane polishing of CdTe produces a surface having a low density of defects.

  2. High efficiency solution processed sintered CdTe nanocrystal solar cells: the role of interfaces.

    PubMed

    Panthani, Matthew G; Kurley, J Matthew; Crisp, Ryan W; Dietz, Travis C; Ezzyat, Taha; Luther, Joseph M; Talapin, Dmitri V

    2014-02-12

    Solution processing of photovoltaic semiconducting layers offers the potential for drastic cost reduction through improved materials utilization and high device throughput. One compelling solution-based processing strategy utilizes semiconductor layers produced by sintering nanocrystals into large-grain semiconductors at relatively low temperatures. Using n-ZnO/p-CdTe as a model system, we fabricate sintered CdTe nanocrystal solar cells processed at 350 °C with power conversion efficiencies (PCE) as high as 12.3%. JSC of over 25 mA cm(-2) are achieved, which are comparable or higher than those achieved using traditional, close-space sublimated CdTe. We find that the VOC can be substantially increased by applying forward bias for short periods of time. Capacitance measurements as well as intensity- and temperature-dependent analysis indicate that the increased VOC is likely due to relaxation of an energetic barrier at the ITO/CdTe interface.

  3. Effects of Stoichiometry in Undoped CdTe Heteroepilayers on Si

    SciTech Connect

    Gessert, Timothy A.; Colegrove, Eric; Stafford, Brian; Gao, Wei; Sivananthan, Siva; Kuciauskas, Darius; Moutinho, Helio; Farrell, Stuart; Barnes, Teresa

    2015-06-14

    Crystalline CdTe layers have been grown heteroepitaxially onto crystalline Si substrates to establish material parameters needed for advanced photovoltaic (PV) device development and related simulation. These studies suggest that additional availability of the intrinsic anion (i.e., Te) during molecular beam epitaxy deposition can improve structural and optoelectronic quality of the epilayer and the interface between Si substrate and the epilayer. This is seen most notably for thin CdTe epitaxial films (<; ~10 micrometers). Although these observations are foundationally important, they are also relevant to envisioned high-performance multijunction II-VI alloy PV devices-where thin layers will be required to achieve production costs aligned with market constraints.

  4. Diffusion-Reaction Modeling of Cu Migration in CdTe Solar Devices

    SciTech Connect

    Guo, Da; Brinkman, Daniel; Fang, Tian; Akis, Richard; Sankin, Igor; Vasileska, Dragica; Ringhofer, Christian

    2015-09-04

    In this work, we report on development of one-dimensional (1D) finite-difference and two-dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu-related metastabilities observed in CdTe solar cells [1]. The evolution of CdTe solar cells performance has been studied as a function of stress time in response to the evolution of associated acceptor and donor states. To achieve such capability, the simu-lators solve reaction-diffusion equations for the defect states in time-space domain self-consistently with the free carrier transport. Re-sults of 1-D and 2-D simulations have been compared to verify the accuracy of solutions.

  5. Investigation of the origin of deep levels in CdTe doped with Bi

    SciTech Connect

    Saucedo, E.; Franc, J.; Elhadidy, H.; Horodysky, P.; Ruiz, C. M.; Bermudez, V.; Sochinskii, N. V.

    2008-05-01

    Combining optical (low temperature photoluminescence), electrical (thermoelectric effect spectroscopy), and structural (synchrotron X-ray powder diffraction) methods, the defect structure of CdTe doped with Bi was studied in crystals with dopant concentration in the range of 10{sup 17}-10{sup 19} at./cm{sup 3}. The semi-insulating state observed in crystals with low Bi concentration is assigned to the formation of a shallow donor level and a deep donor recombination center. Studying the evolution of lattice parameter with temperature, we postulate that the deep center is formed by a Te-Te dimer and their formation is explained by a tetrahedral to octahedral distortion, due to the introduction of Bi in the CdTe lattice. We also shows that this model agrees with the electrical, optical, and transport charge properties of the samples.

  6. Fabrication of fluorescent composite with ultrafast aqueous synthesized high luminescent CdTe quantum dots

    SciTech Connect

    Zhang, Lei Chen, Haibin E-mail: mejswu@ust.hk; Wu, Jingshen E-mail: mejswu@ust.hk; Bi, Xianghong

    2014-05-15

    Without precursor preparation, inert gas protection and enormous amount of additives and reductants, CdTe quantum dots (QDs) can be rapidly synthesized with high quality. A 600 nm photoluminescence peak wavelength could be obtained within 1 hour's refluxing through minimal addition of 1,2-diaminoethane (DAE). The theoretical design for the experiments are illustrated and further proved by the characterization results with different concentrations and reagents. On the other hand, generation of CdTe QDs was found even under room temperature by applying droplet quantity of DAE. This indicates that QDs can be synthesized with simply a bottle and no enormous additives required. The QDs were mixed into the epoxy matrix through solution casting method with cetyltrimethylammonium (CTA) capping for phase transfer. The acquired epoxy based nanocomposite exhibits good transparency, compatibility and fluorescence.

  7. Photoluminescence Imaging of Large-Grain CdTe for Grain Boundary Characterization

    SciTech Connect

    Johnston, Steve; Allende Motz, Alyssa; Reese, Matthew O.; Burst, James M.; Metzger, Wyatt K.

    2015-06-14

    In this work, we use photoluminescence (PL) imaging to characterize CdTe grain boundary recombination. We use a silicon megapixel camera and green (532 nm) laser diodes for excitation. A microscope objective lens system is used for high spatial resolution and a field of view down to 190 um x 190 um. PL images of large-grain (5 to 50 um) CdTe samples show grain boundary and grain interior features that vary with processing conditions. PL images of samples in the as-deposited state show distinct dark grain boundaries that suggest high excess carrier recombination. A CdCl2 treatment leads to PL images with very little distinction at the grain boundaries, which illustrates the grain boundary passivation properties. Other process conditions are also shown, along with comparisons of PL images to high spatial resolution time-resolved PL carrier lifetime maps.

  8. CdTe surface roughness by Raman spectroscopy using the 830 nm wavelength.

    PubMed

    Frausto-Reyes, C; Molina-Contreras, J Rafael; Medina-Gutiérrez, C; Calixto, Sergio

    2006-09-01

    A Raman spectroscopic study was performed to detect the surface roughness of a cadmium telluride (CdTe) wafer sample, using the 514.5, 632.8 and 830.0 nm excitations wavelengths. To verify the relation between the roughness and the structure of Raman spectra, in certain zones of the sample, we measured their roughness with an atomic force microscopy. It was found that, using the 830 nm wavelength there is a direct correspondence between the spectrum structure and the surface roughness. For the others wavelengths it was found, however, that there is not a clearly correspondence between them. Our results suggest that, using the excitation wavelength of 830 nm the Raman spectroscopy can be used as an on-line roughness monitor on the CdTe growth.

  9. Identification of critical stacking faults in thin-film CdTe solar cells

    SciTech Connect

    Yoo, Su-Hyun; Walsh, Aron; Butler, Keith T.; Soon, Aloysius; Abbas, Ali; Walls, John M.

    2014-08-11

    Cadmium telluride (CdTe) is a p-type semiconductor used in thin-film solar cells. To achieve high light-to-electricity conversion, annealing in the presence of CdCl{sub 2} is essential, but the underlying mechanism is still under debate. Recent evidence suggests that a reduction in the high density of stacking faults in the CdTe grains is a key process that occurs during the chemical treatment. A range of stacking faults, including intrinsic, extrinsic, and twin boundary, are computationally investigated to identify the extended defects that limit performance. The low-energy faults are found to be electrically benign, while a number of higher energy faults, consistent with atomic-resolution micrographs, are predicted to be hole traps with fluctuations in the local electrostatic potential. It is expected that stacking faults will also be important for other thin-film photovoltaic technologies.

  10. Growth and optical properties of CdTe quantum dots in ZnTe nanowires

    SciTech Connect

    Wojnar, Piotr; Janik, Elzbieta; Baczewski, Lech T.; Kret, Slawomir; Karczewski, G.; Wojtowicz, Tomasz

    2011-09-12

    We report on the formation of optically active CdTe quantum dots in ZnTe nanowires. The CdTe/ZnTe nanostructures have been grown by a gold nanocatalyst assisted molecular beam epitaxy in a vapor-liquid solid growth process. The presence of CdTe insertions in ZnTe nanowire results in the appearance of a strong photoluminescence band in the 2.0 eV-2.25 eV energy range. Spatially resolved photoluminescence measurements reveal that this broad emission consists of several sharp lines with the spectral width of about 2 meV. The large degree of linear polarization of these individual emission lines confirms their nanowire origin, whereas the zero-dimensional confinement is proved by photon correlation spectroscopy.

  11. Crystal Growth of CdTe by Gradient Freeze in Universal Multizone Crystallizator (UMC)

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Lehoczky, S. L.; Li, C.; Knuteson, D.; Raghothamachar, B.; Dudley, M.; Szoke, J.; Barczy, P.

    2004-01-01

    In the case of unsealed melt growth of an array of II-VI compounds, namely, CdTe, CdZnTe and ZnSe, there is a tremendous amount of experimental data describing the correlations between melt conditions and crystal quality. The results imply that the crystallinity quality can be improved if the melt was markedly superheated or long-time held before growth. It is speculated that after high superheating the associated complex dissociate and the spontaneous nucleation is retarded. In this study, crystals of CdTe were grown from melts which have undergone different thermal history by the unseeded gradient freeze method using the Universal Multizone Crystallizator (UMC). The effects of melt conditions on the quality of grown crystal were studied by various characterization techniques, including Synchrotron White Beam X-ray Topography (SWSXT), infrared microscopy, chemical analysis by glow discharge mass spectroscopy (GDMS), electrical conductivity and Hall measurements.

  12. Structural phase transition of CdTe: an ab initio study.

    PubMed

    Alptekin, Sebahaddin

    2013-01-01

    A constant pressure ab initio MD technique and density functional theory with a generalized gradient approximation (GGA) was used to study the pressure-induced phase transition in zinc-blende CdTe. We found that CdTe undergoes a structural first-order phase transition to [Formula: see text] (binary β-tin) tetragonal structure in the constant pressure molecular dynamics simulation at 20 GPa. When the pressure was increased to 50 GPa, the phase of tetragonal structure converted to a new Imm2 orthorhombic structure. These phase transformations were also calculated by using the enthalpy calculations. Transition phases, lattice parameters and bulk properties we attained are comparable with experimental and theoretical data.

  13. Room temperature ferromagnetism in Co defused CdTe nanocrystalline thin films

    SciTech Connect

    Rao, N. Madhusudhana; Kaleemulla, S.; Begam, M. Rigana

    2014-04-24

    Nanocrystalline Co defused CdTe thin films were prepared using electron beam evaporation technique by depositing CdTe/Co/CdTe stacked layers with different Co thickness onto glass substrate at 373 K followed by annealing at 573K for 2 hrs. Structural, morphological and magnetic properties of of all the Co defused CdTe thin films has been investigated. XRD pattern of all the films exhibited zinc blende structure with <111> preferential orientation without changing the crystal structure of the films. The grain size of the films increased from 31.5 nm to 48.1 nm with the increase of Co layer thickness from 25nm to 100nm. The morphological studies showed that uniform texture of the films and the presence of Co was confirmed by EDAX. Room temperature magnetization curves indicated an improved ferromagnetic behavior in the films with increase of the Co thickness.

  14. Redetermination of Ba(2)CdTe(3) from single-crystal X-ray data.

    PubMed

    Yang, Min; Xia, Sheng-Qing; Tao, Xu-Tang

    2012-10-01

    The previous structure determination of the title compound, dibarium tritelluridocadmate, was based on powder X-ray diffraction data [Wang & DiSalvo (1999 ▶). J. Solid State Chem.148, 464-467]. In the current redetermination from single-crystal X-ray data, all atoms were refined with anisotropic displacement parameters. The previous structure report is generally confirmed, but with some differences in bond lengths. Ba(2)CdTe(3) is isotypic with Ba(2)MX(3) (M = Mn, Cd; X = S, Se) and features (1) (∞)[CdTe(2/2)Te(2/1)](4-) chains of corner-sharing CdTe(4) tetra-hedra running parallel [010]. The two Ba(2+) cations are located between the chains, both within distorted monocapped trigonal-prismatic coordination polyhedra. All atoms in the structure are located on a mirror plane.

  15. CdTe quantum dot as a fluorescence probe for vitamin B12 in dosage form

    NASA Astrophysics Data System (ADS)

    Vaishnavi, E.; Renganathan, R.

    2013-11-01

    We here report the CdTe quantum dot (CdTe QDs)-based sensor for probing vitamin B12 derivatives in aqueous solution. In this paper, simple and sensitive fluorescence quenching measurements has been employed. The Stern-Volmer constant (KSV), quenching rate constant (kq) and binding constant (K) were rationalized from fluorescence quenching measurement. Furthermore, the fluorescence resonance energy transfer (FRET) mechanism was discussed. This method was applicable over the concentration ranging from 1 to 14 μg/mL (VB12) with correlation coefficient of 0.993. The limit of detection (LOD) of VB12 was found to be 0.15 μg/mL. Moreover, the present approach opens a simple pathway for developing cost-effective, sensitive and selective QD-based fluorescence sensors/probes for biologically significant VB12 in pharmaceutical sample with mean recoveries in the range of 100-102.1%.

  16. "Phoswich Wall": A charged-particle detector array for inverse-kinematic reactions with the Gretina/GRETA γ-ray arrays

    NASA Astrophysics Data System (ADS)

    Sarantites, D. G.; Reviol, W.; Elson, J. M.; Kinnison, J. E.; Izzo, C. J.; Manfredi, J.; Liu, J.; Jung, H. S.; Goerres, J.

    2015-08-01

    A high-efficiency, forward-hemisphere detector system for light charged particles and low-Z heavy ions, as obtained in an accelerator experiment, is described. It consists of four 8×8 pixel multianode photomultiplier tubes with 2.2-mm thick CsI(Tl) and 12 -μm thick fast-plastic scintillation detectors. Its phoswich structure allows individual Z resolution for 1H, 4He, 7Li, 4He+4He, 9Be, 11B, 12C, and 14N ions, which are target-like fragments detected in strongly inverse kinematics. The device design has been optimized for use with a 4π γ-ray array, and the main applications are transfer reactions and Coulomb excitation. A high-angular resolution for the detection of the target-like fragments is achieved which permits angular distributions to be measured in the rest frame of the projectile-like fragment with a resolution of ~ 2 °.

  17. Hot electron extraction from CdTe quantum dots via beta carotene molecular energy levels

    NASA Astrophysics Data System (ADS)

    Pazhanivel, T.; Nataraj, D.; Devarajan, V. P.; Senthil, K.; Seol, M.; Yong, K.

    2012-06-01

    We report our findings related to hot electron extraction from CdTe quantum dots, and we were able to do this by using beta carotene as an electron acceptor. Transient absorption spectra with two slow recovering negative bleaches at the absorption maximum of the molecule and quantum dot have indicated the slowing down of cooling process and the existence of hot carriers in this hybrid system.

  18. Cyclodextrin capped CdTe quantum dots as versatile fluorescence sensors for nitrophenol isomers

    NASA Astrophysics Data System (ADS)

    Zhang, Zhixing; Zhou, Jie; Liu, Yun; Tang, Jian; Tang, Weihua

    2015-11-01

    Cyclodextrin (CD) capped CdTe quantum dots (QDs) were prepared with uniform dimension (average diameter ~5 nm) and high quantum yield (ca. 65%). By taking advantage of the inclusion complexation of CD, β-CD-CdTe QDs exhibited strong fluorescence quenching in a linear relationship with the concentration of o-, m- and p-nitrophenol in the range of 20-100 μM. The detection limit reached 0.05 μM for o-/p-nitrophenol and 0.3 μM for m-nitrophenol. The fluorescence decay study revealed the stabilization effect of CD covering on CdTe QDs and fine-tuning of the fluorescence for selective ultrasensitive detection of nitrophenol isomers.Cyclodextrin (CD) capped CdTe quantum dots (QDs) were prepared with uniform dimension (average diameter ~5 nm) and high quantum yield (ca. 65%). By taking advantage of the inclusion complexation of CD, β-CD-CdTe QDs exhibited strong fluorescence quenching in a linear relationship with the concentration of o-, m- and p-nitrophenol in the range of 20-100 μM. The detection limit reached 0.05 μM for o-/p-nitrophenol and 0.3 μM for m-nitrophenol. The fluorescence decay study revealed the stabilization effect of CD covering on CdTe QDs and fine-tuning of the fluorescence for selective ultrasensitive detection of nitrophenol isomers. Electronic supplementary information (ESI) available: Experimental procedure and characterization for new materials. See DOI: 10.1039/c5nr06073g

  19. Advanced Research Deposition System (ARDS) for processing CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Barricklow, Keegan Corey

    CdTe solar cells have been commercialized at the Gigawatt/year level. The development of volume manufacturing processes for next generation CdTe photovoltaics (PV) with higher efficiencies requires research systems with flexibility, scalability, repeatability and automation. The Advanced Research Deposition Systems (ARDS) developed by the Materials Engineering Laboratory (MEL) provides such a platform for the investigation of materials and manufacturing processes necessary to produce the next generation of CdTe PV. Limited by previous research systems, the ARDS was developed to provide process and hardware flexibility, accommodating advanced processing techniques, and capable of producing device quality films. The ARDS is a unique, in-line process tool with nine processing stations. The system was designed, built and assembled at the Materials Engineering Laboratory. Final assembly, startup, characterization and process development are the focus of this research. Many technical challenges encountered during the startup of the ARDS were addressed in this research. In this study, several hardware modifications needed for the reliable operation of the ARDS were designed, constructed and successfully incorporated into the ARDS. The effect of process condition on film properties for each process step was quantified. Process development to achieve 12% efficient baseline solar cell required investigation of discrete processing steps, troubleshooting process variation, and developing performance correlations. Subsequent to this research, many advances have been demonstrated with the ARDS. The ARDS consistently produces devices of 12% +/-.5% by the process of record (POR). The champion cell produced to date utilizing the ARDS has an efficiency of 16.2% on low cost commercial sodalime glass and utilizes advanced films. The ARDS has enabled investigation of advanced concepts for processing CdTe devices including, Plasma Cleaning, Plasma Enhanced Closed Space Sublimation

  20. Characteristics of metal/sputtered CdTe/ n-GaAs diode structures

    NASA Astrophysics Data System (ADS)

    Das, M. B.; Krishnaswamy, S. V.; Petkie, R.; Elmuradi, M.

    1983-02-01

    Incorporation of a thin layer of r.f. sputtered CdTe between the metal and n-GaAs, has resulted in diode structures with MIS and Schottky barrier types C/V characteristics and low-current forward and reverse I/V characteristics. These structures have the potential to be useful in improving the performance of GaAs FET's for microwave and high speed applications.

  1. Advanced UV Detectors and Detector Arrays

    NASA Technical Reports Server (NTRS)

    Pankove, Jacques I.; Torvik, John

    1998-01-01

    Gallium Nitride (GaN) with its wide energy bandgap of 3.4 eV holds excellent promise for solar blind UV detectors. We have successfully designed, fabricated and tested GaN p-i-n detectors and detector arrays. The detectors have a peak responsivity of 0.14A/W at 363 nm (3.42 eV) at room temperature. This corresponds to an internal quantum efficiency of 56%. The responsivity decreases by several orders of magnitude to 0.008 A/W at 400 nm (3.10 eV) giving the excellent visible rejection ratio needed for solar-blind applications.

  2. Signal-on electrochemiluminescence of biofunctional CdTe quantum dots for biosensing of organophosphate pesticides.

    PubMed

    Liang, Han; Song, Dandan; Gong, Jingming

    2014-03-15

    A new, highly sensitive and selective ECL assay biosensor based on target induced signal on has been developed for the detection of organophosphate pesticides (OPs), whereby the smart integration of graphene nanosheets (GNs), CdTe quantum dots (CdTe QDs), and acetylcholinesterase (AChE) enzymatic reaction yields a biofunctional AChE-GNs-QDs hybrid as cathodic ECL emitters for OPs sensing. The electrochemically synthesized GNs were selected as a supporting material to anchor CdTe QDs, exhibiting a significantly amplified ECL signal of QDs. On the basis of the effect of OPs on the ECL signal of AChE-QDs-GNs modified glassy carbon electrode (GCE), a highly sensitive GNs-anchored-QDs-based signal-on ECL biosensor was developed for sensing OPs, combined with the enzymatic reactions and the dissolved oxygen as coreactant. The conditions for OPs detection were optimized by using methyl parathion (MP) as a model OP compound. Under the optimized experimental conditions, such a newly designed system shows remarkably improved sensitivity and selectivity for the sensing of OPs. The detection limit was found to be as low as about 0.06 ng mL(-1) (S/N=3). Toward the goal for practical applications, the resulting sensor was further evaluated by monitoring MP in spiked vegetable samples, showing fine applicability for the detection of MP in real samples.

  3. Strain relaxation of CdTe on Ge studied by medium energy ion scattering

    NASA Astrophysics Data System (ADS)

    Pillet, J. C.; Pierre, F.; Jalabert, D.

    2016-10-01

    We have used the medium energy ion scattering (MEIS) technique to assess the strain relaxation in molecular-beam epitaxial (MBE) grown CdTe (2 1 1)/Ge (2 1 1) system. A previous X-ray diffraction study, on 10 samples of the same heterostructure having thicknesses ranging from 25 nm to 10 μm has allowed the measurement of the strain relaxation on a large scale. However, the X-ray diffraction measurements cannot achieve a stress measurement in close proximity to the CdTe/Ge interface at the nanometer scale. Due to the huge lattice misfit between the CdTe and Ge, a high degree of disorder is expected at the interface. The MEIS in channeling mode is a good alternative in order to profile defects with a high depth resolution. For a 21 nm thick CdTe layer, we observed, at the interface, a high density of Cd and/or Te atoms moved from their expected crystallographic positions followed by a rapid recombination of defects. Strain relaxation mechanisms in the vicinity of the interface are discussed

  4. Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Zaunbrecher, Katherine N.; Kuciauskas, Darius; Swartz, Craig H.; Dippo, Pat; Edirisooriya, Madhavie; Ogedengbe, Olanrewaju S.; Sohal, Sandeep; Hancock, Bobby L.; LeBlanc, Elizabeth G.; Jayathilaka, Pathiraja A. R. D.; Barnes, Teresa M.; Myers, Thomas H.

    2016-08-01

    Heterostructures with CdTe and CdTe1-xSex (x ˜ 0.01) absorbers between two wider-band-gap Cd1-xMgxTe barriers (x ˜ 0.25-0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of confocal photoluminescence (PL), time-resolved PL, and low-temperature PL emission spectroscopy, two extended defect types were identified and the impact of these defects on charge-carrier recombination was analyzed. The dominant defects identified by confocal PL were dislocations in samples grown on (211)B CdTe substrates and crystallographic twinning-related defects in samples on (100)-oriented InSb substrates. Low-temperature PL shows that twin-related defects have a zero-phonon energy of 1.460 eV and a Huang-Rhys factor of 1.50, while dislocation-dominated samples have a 1.473-eV zero-phonon energy and a Huang-Rhys factor of 1.22. The charge carrier diffusion length near both types of defects is ˜6 μm, suggesting that recombination is limited by diffusion dynamics. For heterostructures with a low concentration of extended defects, the bulk lifetime was determined to be 2.2 μs with an interface recombination velocity of 160 cm/s and an estimated radiative lifetime of 91 μs.

  5. Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint

    SciTech Connect

    Ullal, H. S.; von Roedern, B.

    2007-09-01

    We report here on the major commercialization aspects of thin-film photovoltaic (PV) technologies based on CIGS and CdTe (a-Si and thin-Si are also reported for completeness on the status of thin-film PV). Worldwide silicon (Si) based PV technologies continues to dominate at more than 94% of the market share, with the share of thin-film PV at less than 6%. However, the market share for thin-film PV in the United States continues to grow rapidly over the past several years and in CY 2006, they had a substantial contribution of about 44%, compared to less than 10% in CY 2003. In CY 2007, thin-film PV market share is expected to surpass that of Si technology in the United States. Worldwide estimated projections for CY 2010 are that thin-film PV production capacity will be more than 3700 MW. A 40-MW thin-film CdTe solar field is currently being installed in Saxony, Germany, and will be completed in early CY 2009. The total project cost is Euro 130 million, which equates to an installed PV system price of Euro 3.25/-watt averaged over the entire solar project. This is the lowest price for any installed PV system in the world today. Critical research, development, and technology issues for thin-film CIGS and CdTe are also elucidated in this paper.

  6. RF magnetron sputtering deposition of CdTe passivation on HgCdTe

    NASA Astrophysics Data System (ADS)

    Rutkowski, Jaroslaw; Adamiec, Krzysztof; Rogalski, Antoni

    1998-04-01

    In this study, we report the RF magnetron sputtering growth and characterization of CdTe passivant on bulk n-type HgCdTe. Our investigations include the HgCdTe surface preparation and in-situ pretreatment, deposition-induced surface damage, interface charge, CdTe film stoichiometry, and thermal stability. The metal-insulator-semiconductor test structures are processed and their electrical properties are measured by capacitance-voltage characteristics. The heterostructures are also characterized by reflectance measurement. In order to investigate the passivation properties of CdTe/HgCdTe heterostructures, we have modeled the band diagram of abrupt CdTe/HgCdTe heterojunction. The effect of sputtering growth condition parameters is also reported. The sputtering CdTe layers, exhibit excellent dielectric, insulating and mechano- chemical properties, as well as interface properties. The interfaces are characterized by slight accumulation and a small hysteresis. A carefully controlled growth process and surface pretreatment tailored to the specific material are required in order to obtain near flat band conditions on n- type materials. Additional informations on surface limitations are obtained from analyzing the I-V characteristics of photodiodes with metal gates covering the p-n junction surface location.

  7. Thin-film CdTe photovoltaic cells by laser deposition and rf sputtering

    NASA Astrophysics Data System (ADS)

    Compaan, A.; Bohn, R. G.; Bhat, A.; Tabory, C.; Shao, M.; Li, Y.; Savage, M. E.; Tsien, L.

    1992-12-01

    Laser-driven physical vapor deposition (LDPVD) and radio-frequency (rf) sputtering have been used to fabricate thin-film solar cells on SnO2-coated glass substrates. The laser-ablation process readily permits the use of several target materials in the same vacuum chamber and complete solar cell structures have been fabricated on SnO2-coated glass using LDPVD for the CdS, CdTe, and CdCl2. To date the best devices (˜9% AM1.5) have been obtained after a post-deposition anneal at 400 °C. In addition, cells have been fabricated with the combination of LDPVD CdS, rf-sputtered CdTe, and LDPVD CdCl2. The performance of these cells indicates considerable promise for the potential of rf sputtering for CdTe photovoltaic devices. The physical mechanisms of LDPVD have been studied by transient optical spectroscopy on the laser ablation plume. These measurements have shown that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a large fraction which is highly excited internally (≥6 eV) and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. Quality of as-grown and annealed films has been analyzed by optical absorption. Raman scattering, photoluminescence, electrical conductivity, Hall effect, x-ray diffraction, and SEM/EDS.

  8. Reduction of Fermi level pinning and recombination at polycrystalline CdTe surfaces by laser irradiation

    SciTech Connect

    Simonds, Brian J.; Kheraj, Vipul; Palekis, Vasilios; Ferekides, Christos; Scarpulla, Michael A.

    2015-06-14

    Laser processing of polycrystalline CdTe is a promising approach that could potentially increase module manufacturing throughput while reducing capital expenditure costs. For these benefits to be realized, the basic effects of laser irradiation on CdTe must be ascertained. In this study, we utilize surface photovoltage spectroscopy (SPS) to investigate the changes to the electronic properties of the surface of polycrystalline CdTe solar cell stacks induced by continuous-wave laser annealing. The experimental data explained within a model consisting of two space charge regions, one at the CdTe/air interface and one at the CdTe/CdS junction, are used to interpret our SPS results. The frequency dependence and phase spectra of the SPS signal are also discussed. To support the SPS findings, low-temperature spectrally-resolved photoluminescence and time-resolved photoluminescence were also measured. The data show that a modest laser treatment of 250 W/cm{sup 2} with a dwell time of 20 s is sufficient to reduce the effects of Fermi level pinning at the surface due to surface defects.

  9. S–Te Interdiffusion within Grains and Grain Boundaries in CdTe Solar Cells

    SciTech Connect

    Li, C.; Poplawsky, J.; Paudel, N.; Pennycook, T. J.; Haigh, S. J.; Al-Jassim, M. M.; Yan, Y.; Pennycook, S. J.

    2014-09-19

    At the CdTe/CdS interface, a significant Te-S interdiffusion has been found a few nanometers into the grain interiors with scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS). S substitution at Te sites has been directly resolved in CdTe with STEM Z-contrast images. Moreover, when enough S substitutes for Te, a structural transformation from zinc-blende to wurtzite has been observed. Cl segregation has also been found at the interface. STEM electron-beam-induced current (EBIC) shows that the p-n junction occurs a few nm into the CdTe grains, which is consistent with the S diffusion range we observe. The shift of the p-n junction suggests a buried homo-junction which would help reduce non-radiative recombination at the junction. Meanwhile, long-range S diffusion in CdTe grain boundaries (GBs) has been detected, as well as Te and Cl diffusion in CdS GBs.

  10. S–Te Interdiffusion within Grains and Grain Boundaries in CdTe Solar Cells

    DOE PAGES

    Li, C.; Poplawsky, J.; Paudel, N.; Pennycook, T. J.; Haigh, S. J.; Al-Jassim, M. M.; Yan, Y.; Pennycook, S. J.

    2014-09-19

    At the CdTe/CdS interface, a significant Te-S interdiffusion has been found a few nanometers into the grain interiors with scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS). S substitution at Te sites has been directly resolved in CdTe with STEM Z-contrast images. Moreover, when enough S substitutes for Te, a structural transformation from zinc-blende to wurtzite has been observed. Cl segregation has also been found at the interface. STEM electron-beam-induced current (EBIC) shows that the p-n junction occurs a few nm into the CdTe grains, which is consistent with the S diffusion range we observe. The shiftmore » of the p-n junction suggests a buried homo-junction which would help reduce non-radiative recombination at the junction. Meanwhile, long-range S diffusion in CdTe grain boundaries (GBs) has been detected, as well as Te and Cl diffusion in CdS GBs.« less

  11. Calculation of the High-Temperature Point Defects Structure in Te-Rich CdTe

    NASA Astrophysics Data System (ADS)

    Dai, Shujun; Wang, Tao; Liu, Huimin; He, Yihui; Jie, Wanqi

    2016-06-01

    A thermodynamic equilibrium model for CdTe annealed under Te vapor is established, in which possible point defects and a defect reaction existing in undoped and In-doped Te-rich CdTe crystals are taken into consideration. Independent point defects, such as VCd, Cdi, and Tei, as well as defect complexes, namely TeCd-VCd (B complex), {{Te}}_{{Cd}}^{2 + } - {{V}}_{{Cd}}^{2 - } (D complex), {{In}}_{{Cd}}^{ + } - {{V}}_{{Cd}}^{ - } (A-center) and Tei-VCd (TeCd), are discussed based on the defect chemistry theory. More specially, the mass action law and quasi-chemical equations are used to calculate defects concentration and Fermi level in undoped and doped CdTe crystals with different indium concentrations. It is found that the Fermi level is controlled by a {{V}}_{{Cd}}^{2 - } , TeCd, and B/D-complex in undoped crystal. The concentration of VCd drops down in an obvious manner and that of TeCd rises for doped crystal with increasing [In].

  12. Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices

    SciTech Connect

    Gessert, T. A.; Dhere, R. G.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Bergeson, J. D.

    2011-01-01

    We discuss typical and alternative procedures to analyze time-resolved photoluminescence (TRPL) measurements of minority carrier lifetime (MCL) with the hope of enhancing our understanding of how this technique may be used to better analyze CdTe photovoltaic (PV) device functionality. Historically, TRPL measurements of the fast recombination rate (t{sub 1}) have provided insightful correlation with broad device functionality. However, we have more recently found that t{sub 1} does not correlate as well with smaller changes in device performance, nor does it correlate well with performance differences observed between superstrate and substrate CdTe PV devices. This study presents TRPL data for both superstrate and substrate CdTe devices where both t{sub 1} and the slower TRPL decay (t{sub 2}) are analyzed. The study shows that changes in performance expected from small changes in device processing may correlate better with t{sub 2}. Numerical modeling further suggests that, for devices that are expected to have similar drift field in the depletion region, effects of changes in bulk MCL and interface recombination should be more pronounced in t{sub 2}. Although this technique may provide future guidance to improving CdS/CdTe device performance, it is often difficult to extract statistically precise values for t{sub 2}, and therefore t{sub 2} data may demonstrate significant scatter when correlated with performance parameters.

  13. Electron and hole drift mobility measurements on thin film CdTe solar cells

    SciTech Connect

    Long, Qi; Dinca, Steluta A.; Schiff, E. A.; Yu, Ming; Theil, Jeremy

    2014-07-28

    We report electron and hole drift mobilities in thin film polycrystalline CdTe solar cells based on photocarrier time-of-flight measurements. For a deposition process similar to that used for high-efficiency cells, the electron drift mobilities are in the range of 10{sup −1}–10{sup 0} cm{sup 2}/V s, and holes are in the range of 10{sup 0}–10{sup 1} cm{sup 2}/V s. The electron drift mobilities are about a thousand times smaller than those measured in single crystal CdTe with time-of-flight; the hole mobilities are about ten times smaller. Cells were examined before and after a vapor phase treatment with CdCl{sub 2}; treatment had little effect on the hole drift mobility, but decreased the electron mobility. We are able to exclude bandtail trapping and dispersion as a mechanism for the small drift mobilities in thin film CdTe, but the actual mechanism reducing the mobilities from the single crystal values is not known.

  14. Modeling the defect distribution and degradation of CdTe ultrathin films

    NASA Astrophysics Data System (ADS)

    Gorji, Nima E.

    2014-12-01

    The defect distribution across an ultrathin film CdTe layer of a CdS/CdTe solar cell is modelled by solving the balance equation in steady state. The degradation of the device parameters due to the induced defects during ion implantation is considered where the degradation rate is accelerated if the defect distribution is considerable. The defect concentration is maximum at the surface of the CdTe layer where implantation is applied and it is minimum at the junction with the CdS layer. It shows that ultrathin devices degrade faster if the defect concentration is high at the junction rather than the back region (CdTe/Metal). Since the front and back contacts of the device are close in ultrathin films and the electric field is strong to drive the defects into the junction, the p-doping process might be precisely controlled during ion implantation. The modeling results presented here are in agreement with the few available experimental reports in literature about the degradation and defect configuration of the ultrathin CdTe films.

  15. Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices: Preprint

    SciTech Connect

    Gessert, T. A.; Dhere, R. G.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Bergeson, J. D.

    2011-07-01

    We discuss typical and alternative procedures to analyze time-resolved photoluminescence (TRPL) measurements of minority carrier lifetime (MCL) with the hope of enhancing our understanding of how this technique may be used to better analyze CdTe photovoltaic (PV) device functionality. Historically, TRPL measurements of the fast recombination rate (t1) have provided insightful correlation with broad device functionality. However, we have more recently found that t1 does not correlate as well with smaller changes in device performance, nor does it correlate well with performance differences observed between superstrate and substrate CdTe PV devices. This study presents TRPL data for both superstrate and substrate CdTe devices where both t1 and the slower TRPL decay (t2) are analyzed. The study shows that changes in performance expected from small changes in device processing may correlate better with t2. Numerical modeling further suggests that, for devices that are expected to have similar drift field in the depletion region, effects of changes in bulk MCL and interface recombination should be more pronounced in t2. Although this technique may provide future guidance to improving CdS/CdTe device performance, it is often difficult to extract statistically precise values for t2, and therefore t2 data may demonstrate significant scatter when correlated with performance parameters.

  16. Calculation of the High-Temperature Point Defects Structure in Te-Rich CdTe

    NASA Astrophysics Data System (ADS)

    Dai, Shujun; Wang, Tao; Liu, Huimin; He, Yihui; Jie, Wanqi

    2016-10-01

    A thermodynamic equilibrium model for CdTe annealed under Te vapor is established, in which possible point defects and a defect reaction existing in undoped and In-doped Te-rich CdTe crystals are taken into consideration. Independent point defects, such as VCd, Cdi, and Tei, as well as defect complexes, namely TeCd-VCd (B complex), {Te}_{{Cd}}^{2 + } - {V}_{{Cd}}^{2 - } (D complex), {In}_{{Cd}}^{ + } - {V}_{{Cd}}^{ - } (A-center) and Tei-VCd (TeCd), are discussed based on the defect chemistry theory. More specially, the mass action law and quasi-chemical equations are used to calculate defects concentration and Fermi level in undoped and doped CdTe crystals with different indium concentrations. It is found that the Fermi level is controlled by a {V}_{{Cd}}^{2 - } , TeCd, and B/D-complex in undoped crystal. The concentration of VCd drops down in an obvious manner and that of TeCd rises for doped crystal with increasing [In].

  17. Cathodoluminescence spectrum imaging analysis of CdTe thin-film bevels

    NASA Astrophysics Data System (ADS)

    Moseley, John; Al-Jassim, Mowafak M.; Guthrey, Harvey L.; Burst, James M.; Duenow, Joel N.; Ahrenkiel, Richard K.; Metzger, Wyatt K.

    2016-09-01

    We conducted T = 6 K cathodoluminescence (CL) spectrum imaging with a nanoscale electron beam on beveled surfaces of CdTe thin films at the critical stages of standard CdTe solar cell fabrication. We find that the through-thickness CL total intensity profiles are consistent with a reduction in grain-boundary recombination due to the CdCl2 treatment. The color-coded CL maps of the near-band-edge transitions indicate significant variations in the defect recombination activity at the micron and sub-micron scales within grains, from grain to grain, throughout the film depth, and between films with different processing histories. We estimated the grain-interior sulfur-alloying fraction in the interdiffused CdTe/CdS region of the CdCl2-treated films from a sample of 35 grains and found that it is not strongly correlated with CL intensity. A kinetic rate-equation model was used to simulate grain-boundary (GB) and grain-interior CL spectra. Simulations indicate that the large reduction in the exciton band intensity and relatively small decrease in the lower-energy band intensity at CdTe GBs or dislocations can be explained by an enhanced electron-hole non-radiative recombination rate at the deep GB or dislocation defects. Simulations also show that higher GB concentrations of donors and/or acceptors can increase the lower-energy band intensity, while slightly decreasing the exciton band intensity.

  18. Review on first-principles study of defect properties of CdTe as a solar cell absorber

    NASA Astrophysics Data System (ADS)

    Yang, Ji-Hui; Yin, Wan-Jian; Park, Ji-Sang; Ma, Jie; Wei, Su-Huai

    2016-08-01

    CdTe is one of the leading materials for high-efficiency, low-cost, and thin-film solar cells. In this work, we review the recent first-principles study of defect properties of CdTe and present that: (1) When only intrinsic defects are present, p-type doping in CdTe is weak and the hole density is low due to the relatively deep acceptor levels of Cd vacancy. (2) When only intrinsic defects present, the dominant non-radiative recombination center in p-type CdTe is T{e}Cd2+, which limits the carrier lifetime to be around 200 ns. (3) Extrinsic p-type doping in CdTe by replacing Te with group V elements generally will be limited by the formation of AX centers. This could be overcome through a non-equilibrium cooling process and the hole density can achieve {10}17 {{{cm}}}-3. However, the long-term stability will be a challenging issue. (4) Extrinsic p-type doping by replacing Cd with alkaline group I elements is limited by alkaline interstitials and a non-equilibrium cooling process can efficiently enhance the hole density to the order of {10}17 {{{cm}}}-3. (5) Cu and Cl treatments are discussed. In bulk CdTe, Cu can enhance p-type doping, but Cl is found to be unsuitable for this. Both Cu and Cl show segregation at grain boundaries, especially at those with Te-Te wrong bonds. (6) External impurities are usually incorporated by diffusion. Therefore, the diffusion processes in CdTe are investigated. We find that cation interstitial (Nai, Cui) diffusion follows relatively simple diffusion paths, but anion diffusion (Cli, Pi) follows more complicated paths due to the degenerated defect wavefunctions.

  19. Review on first-principles study of defect properties of CdTe as a solar cell absorber

    NASA Astrophysics Data System (ADS)

    Yang, Ji-Hui; Yin, Wan-Jian; Park, Ji-Sang; Ma, Jie; Wei, Su-Huai

    2016-08-01

    CdTe is one of the leading materials for high-efficiency, low-cost, and thin-film solar cells. In this work, we review the recent first-principles study of defect properties of CdTe and present that: (1) When only intrinsic defects are present, p-type doping in CdTe is weak and the hole density is low due to the relatively deep acceptor levels of Cd vacancy. (2) When only intrinsic defects present, the dominant non-radiative recombination center in p-type CdTe is T{e}Cd2+, which limits the carrier lifetime to be around 200 ns. (3) Extrinsic p-type doping in CdTe by replacing Te with group V elements generally will be limited by the formation of AX centers. This could be overcome through a non-equilibrium cooling process and the hole density can achieve {10}17 {{{cm}}}-3. However, the long-term stability will be a challenging issue. (4) Extrinsic p-type doping by replacing Cd with alkaline group I elements is limited by alkaline interstitials and a non-equilibrium cooling process can efficiently enhance the hole density to the order of {10}17 {{{cm}}}-3. (5) Cu and Cl treatments are discussed. In bulk CdTe, Cu can enhance p-type doping, but Cl is found to be unsuitable for this. Both Cu and Cl show segregation at grain boundaries, especially at those with Te–Te wrong bonds. (6) External impurities are usually incorporated by diffusion. Therefore, the diffusion processes in CdTe are investigated. We find that cation interstitial (Nai, Cui) diffusion follows relatively simple diffusion paths, but anion diffusion (Cli, Pi) follows more complicated paths due to the degenerated defect wavefunctions.

  20. Atmospheric pressure chemical vapor deposition of CdTe for high efficiency thin film PV devices: Annual subcontract report, 26 January 1999--25 January 2000

    SciTech Connect

    Meyers, P. V.; Kee, R.; Wolden, C.; Kestner, J.; Raja, L.; Kaydanov, V.; Ohno, T.; Collins, R.; Fahrenbruch, A.

    2000-05-30

    ITN's three year project Atmospheric Pressure Chemical Vapor Deposition (APCVD) of CdTe for High Efficiency Thin Film PV Devices has the overall objectives of improving thin film CdTe PV manufacturing technology and increasing CdTe PV device power conversion efficiency. CdTe deposition by APCVD employs the same reaction chemistry as has been used to deposit 16% efficient CdTe PV films, i.e., close spaced sublimation, but employs forced convection rather than diffusion as a mechanism of mass transport. Tasks of the APCVD program center on demonstration of APCVD of CdTe films, discovery of fundamental mass transport parameters, application of established engineering principles to the deposition of CdTe films, and verification of reactor design principles which could be used to design high throughput, high yield manufacturing equipment. Additional tasks relate to improved device measurement and characterization procedures that can lead to a more fundamental understanding of CdTe PV device operation and ultimately to higher device conversion efficiency and greater stability. Under the APCVD program, device analysis goes beyond conventional one-dimensional device characterization and analysis toward two dimension measurements and modeling. Accomplishments of the second year of the APCVD subcontract include: deposition of the first APCVD CdTe; identification of deficiencies in the first generation APCVD reactor; design, fabrication and testing of a ``simplified'' APCVD reactor; deposition of the first dense, adherent APCVD CdTe films; fabrication of the first APCVD CdTe PV device; modeling effects of CdSTe and SnOx layers; and electrical modeling of grain boundaries.

  1. Identification of static exposure of standard dosimetric badge with thermoluminescent detectors.

    PubMed

    Budzanowski, M; Olko, P; Kopeć, R; Obryk, B; Dzikiewicz-Sapiecha, H; Siwicki, R

    2007-01-01

    There are three main methods used in individual monitoring: radiographic films, thermoluminescence (TL) and optically stimulated luminescence (OSL). Distinguishing between static (e.g. by leaving it accidentally or purposely in the radiation field) and dynamic exposures can be almost routinely performed for radiographic and OSL methods but is still unsolved for TL detectors. The main aim of this work is to develop a method for identifying static exposures of standard TL detectors at doses which are typical of radiation protection. For this purpose, a new TLD reader equipped with a CCD camera was developed to measure the two-dimensional signal map and not only the total light emitted (as is performed with standard photomultiplier-based TL readers). Standard MCP-N (LiF:Mg,Cu,P) TL pellets of 4.5 mm diameter and 0.9 mm thickness were installed in the standard Rados TL personal badges with special, non-uniform filters and exposed statically to 33 keV X-ray beams at three angles: 0 degrees, 30 degrees and 60 degrees. The detectors were readout in the CCD camera reader and 2-D images were collected. The analysis of these CCD images allows the identification of the static exposure cases and partly the angle of incidence at a dose level of 20 mSv. PMID:17038405

  2. Results from a Si(Li) gamma ray detector stack for future Mars missions

    NASA Technical Reports Server (NTRS)

    Hubbard, G. S.; Mcmurray, Robert E., Jr.; Keller, Robert G.; Wercinski, Paul F.; Walton, John T.; Vierinen, Kari

    1992-01-01

    We present Monte Carlo analysis and experimental data from a novel lithium-drifted silicon detector stack for gamma ray spectroscopy instrumentation in future Mars surface landers and other planetary missions. The Monte Carlo analysis shows full energy photopeaks even in the range of about 100 keV to 2 MeV where, in Si, Compton scattering dominates the absorption processes. Laboratory data is shown for an experimental detector stack of four planar Si(Li) devices, each 5 mm thick with an active area 2 cm in diameter. All the experimental data were collected with maximum temperature of the stack at 175 K. Background reduction is achieved by using the detector of the stack closest to the source in anticoincidence. We present a comparison of experimental data from the stack with the Monte Carlo model for Cs-137 (662 keV). Agreement is shown to be good, with a full energy photopeak clearly seen (FWHM about 10 keV). Experimental stack data is also shown for multiple peaks at 511 keV (Na-22) and 662 keV (Cs-137). The peaks are clearly resolved (FWHM 10 keV), and are compared with the results obtained using a 8 percent resolution, 3 in. x 3 in. NaI(TI) device (FWHM about 50 keV).

  3. A slot-scanned photodiode-array/CCD hybrid detector for digital mammography.

    PubMed

    Mainprize, James G; Ford, Nancy L; Yin, Shi; Tümer, Türmay; Yaffe, Martin J

    2002-02-01

    We have developed a novel direct conversion detector for use in a slot-scanning digital mammography system. The slot-scan concept allows for dose efficient scatter rejection and the ability to use small detectors to produce a large-area image. The detector is a hybrid design with a 1.0 mm thick silicon PIN photodiode array (the x-ray absorber) indium-bump bonded to a CCD readout that is operated in time-delay integration (TDI) mode. Because the charge capacity requirement for good image quality exceeds the capabilities of standard CCDs, a novel CCD was developed. This CCD consists of 24 independent sections, each acting as a miniature CCD with eight rows for TDI. The signal from each section is combined off-chip to produce a full signal image. The MTF and DQE for the device was measured at several exposures and compared to a linear systems model of signal and noise propagation. Because of the scanning nature of TDI imaging, both the MTF(f) and DQE(f) are reduced along the direction of the scanning motion. For a 26 kVp spectrum, the DQE(0) was measured to be 0.75+/-0.02 for an exposure of 1.29 x 10(-5) C/kg (50 mR). PMID:11865992

  4. The X-ray response of CdZnTe detectors to be used as future spectroscopic detectors for X-ray astronomy

    NASA Astrophysics Data System (ADS)

    Kraft, S.; Bavdaz, M.; Castelletto, B.; Peacock, A.; Scholze, F.; Ulm, G.; Gagliardi, M.-A.; Nenonen, S.; Tuomi, T.; Juvonen, M.; Rantamäki, R.

    1998-12-01

    The next generation of X-ray astrophysics missions may well extend the energy range beyond the current limit of about 10keV studied by the existing X-ray Astrophysics space missions such as ASCA or future missions such as AXAF and XMM to be launched in the next few years. To address with a high degree of sensitivity the astrophysical problems associated with X-ray emission in the X-ray band from 0.2 to 100keV a significant extension of the capabilities of focusing X-ray optics and imaging broad band hard X-ray detectors will be required. Future missions such as INTEGRAL, BASIS and EXIST will make use of CdZnTe or CdTe detectors for imaging spectroscopy down to about 5keV with a spectral resolution between 3% and 7% at 100keV. This is about a factor of 10 away from what is theoretically possible and mainly caused by the poor crystal quality. In this paper experimental results on the study of the X-ray response of CdZnTe detectors are presented. The detector response to photons with energies between 1 and 5keV has been investigated using synchrotron radiation and a preliminary model to describe the detector response developed. The limitations on the energy resolution, due to incomplete charge collection and spatial non-uniformities, are presented based on the detailed mapping of the energy response of a detector exposed to highly monochromatised synchrotron radiation. At higher energies results have been obtained using a 241Am radioactive source and an electron cyclotron resonance source so as to establish the detector performance and overall response to medium- and higher-energy X-ray photons up to 60keV. Based on these results the performance of the detectors are compared with Si(Li) and HPGe solid-state detectors.

  5. A prototype of very high resolution small animal PET scanner using silicon pad detectors

    PubMed Central

    Park, Sang-June; Leslie Rogers, W.; Huh, Sam; Kagan, Harris; Honscheid, Klaus; Burdette, Don; Chesi, Enrico; Lacasta, Carlos; Llosa, Gabriela; Mikuz, Marko; Studen, Andrej; Weilhammer, Peter; Clinthorne, Neal H.

    2007-01-01

    A very high resolution small animal positron emission tomograph (PET) which can achieve sub-millimeter spatial resolution is being developed using silicon pad detectors. The prototype PET for a single slice instrument consists of two 1 mm thick silicon pad detectors, each containing a 32 × 16 array of 1.4 mm × 1.4 mm pads read out with four VATAGP3 chips which have 128 channels low-noise self triggering ASIC in each chip, coincidence units, a source turntable and tungsten slice collimator. The silicon detectors were located edgewise on opposite sides of a 4 cm field-of-view to maximize efficiency. Energy resolution is dominated by electronic noise, which is 0.98% (1.38 keV) FWHM at 140.5 keV. Coincidence timing resolution is 82.1 ns FWHM and coincidence efficiency was measured to be 1.04 × 10-3 % from two silicon detectors with annihilation photons of 18F source Image data were acquired and reconstructed using conventional 2-D filtered-back projection (FBP) and a maximum likelihood expectation maximization (ML-EM) method. Image resolution of approximately 1.45 mm FWHM is obtained from 1-D profile of 1.1 mm diameter 18F line source image. Even better resolution can be obtained with smaller detector element sizes. While many challenges remain in scaling up the instrument to useful efficiency including densely packed detectors and significantly improved timing resolution, performance of the test setup in terms of easily achieving submillimeter resolution is compelling. PMID:18084629

  6. The TALE Tower Detector

    NASA Astrophysics Data System (ADS)

    Bergman, D. R.

    The TA Low Energy Extension will include a Tower FluorescenceDetector. Extensive air showers at the lowest usful energies for fluorescence detectors will in general be close to the detector. This requires viewing all elevation angles to be able to reconstruct showers. The TALE Tower Detector, operating in conjunction with other TALE detectors will view elevation angles up to above 70 degrees, with an azimuthal coverage of about 90 degrees. Results from a prototype mirror operated in conjunction with the HiRes detector will also be presented.

  7. GADRAS Detector Response Function.

    SciTech Connect

    Mitchell, Dean J.; Harding, Lee; Thoreson, Gregory G; Horne, Steven M.

    2014-11-01

    The Gamma Detector Response and Analysis Software (GADRAS) applies a Detector Response Function (DRF) to compute the output of gamma-ray and neutron detectors when they are exposed to radiation sources. The DRF is fundamental to the ability to perform forward calculations (i.e., computation of the response of a detector to a known source), as well as the ability to analyze spectra to deduce the types and quantities of radioactive material to which the detectors are exposed. This document describes how gamma-ray spectra are computed and the significance of response function parameters that define characteristics of particular detectors.

  8. The upgraded DØ detector

    NASA Astrophysics Data System (ADS)

    Abazov, V. M.; Abbott, B.; Abolins, M.; Acharya, B. S.; Adams, D. L.; Adams, M.; Adams, T.; Agelou, M.; Agram, J.-L.; Ahmed, S. N.; Ahn, S. H.; Ahsan, M.; Alexeev, G. D.; Alkhazov, G.; Alton, A.; Alverson, G.; Alves, G. A.; Anastasoaie, M.; Andeen, T.; Anderson, J. T.; Anderson, S.; Andrieu, B.; Angstadt, R.; Anosov, V.; Arnoud, Y.; Arov, M.; Askew, A.; Åsman, B.; Assis Jesus, A. C. S.; Atramentov, O.; Autermann, C.; Avila, C.; Babukhadia, L.; Bacon, T. C.; Badaud, F.; Baden, A.; Baffioni, S.; Bagby, L.; Baldin, B.; Balm, P. W.; Banerjee, P.; Banerjee, S.; Barberis, E.; Bardon, O.; Barg, W.; Bargassa, P.; Baringer, P.; Barnes, C.; Barreto, J.; Bartlett, J. F.; Bassler, U.; Bhattacharjee, M.; Baturitsky, M. A.; Bauer, D.; Bean, A.; Baumbaugh, B.; Beauceron, S.; Begalli, M.; Beaudette, F.; Begel, M.; Bellavance, A.; Beri, S. B.; Bernardi, G.; Bernhard, R.; Bertram, I.; Besançon, M.; Besson, A.; Beuselinck, R.; Beutel, D.; Bezzubov, V. A.; Bhat, P. C.; Bhatnagar, V.; Binder, M.; Biscarat, C.; Bishoff, A.; Black, K. M.; Blackler, I.; Blazey, G.; Blekman, F.; Blessing, S.; Bloch, D.; Blumenschein, U.; Bockenthien, E.; Bodyagin, V.; Boehnlein, A.; Boeriu, O.; Bolton, T. A.; Bonamy, P.; Bonifas, D.; Borcherding, F.; Borissov, G.; Bos, K.; Bose, T.; Boswell, C.; Bowden, M.; Brandt, A.; Briskin, G.; Brock, R.; Brooijmans, G.; Bross, A.; Buchanan, N. J.; Buchholz, D.; Buehler, M.; Buescher, V.; Burdin, S.; Burke, S.; Burnett, T. H.; Busato, E.; Buszello, C. P.; Butler, D.; Butler, J. M.; Cammin, J.; Caron, S.; Bystricky, J.; Canal, L.; Canelli, F.; Carvalho, W.; Casey, B. C. K.; Casey, D.; Cason, N. M.; Castilla-Valdez, H.; Chakrabarti, S.; Chakraborty, D.; Chan, K. M.; Chandra, A.; Chapin, D.; Charles, F.; Cheu, E.; Chevalier, L.; Chi, E.; Chiche, R.; Cho, D. K.; Choate, R.; Choi, S.; Choudhary, B.; Chopra, S.; Christenson, J. H.; Christiansen, T.; Christofek, L.; Churin, I.; Cisko, G.; Claes, D.; Clark, A. R.; Clément, B.; Clément, C.; Coadou, Y.; Colling, D. J.; Coney, L.; Connolly, B.; Cooke, M.; Cooper, W. E.; Coppage, D.; Corcoran, M.; Coss, J.; Cothenet, A.; Cousinou, M.-C.; Cox, B.; Crépé-Renaudin, S.; Cristetiu, M.; Cummings, M. A. C.; Cutts, D.; da Motta, H.; Das, M.; Davies, B.; Davies, G.; Davis, G. A.; Davis, W.; De, K.; de Jong, P.; de Jong, S. J.; De La Cruz-Burelo, E.; De La Taille, C.; De Oliveira Martins, C.; Dean, S.; Degenhardt, J. D.; Déliot, F.; Delsart, P. A.; Del Signore, K.; DeMaat, R.; Demarteau, M.; Demina, R.; Demine, P.; Denisov, D.; Denisov, S. P.; Desai, S.; Diehl, H. T.; Diesburg, M.; Doets, M.; Doidge, M.; Dong, H.; Doulas, S.; Dudko, L. V.; Duflot, L.; Dugad, S. R.; Duperrin, A.; Dvornikov, O.; Dyer, J.; Dyshkant, A.; Eads, M.; Edmunds, D.; Edwards, T.; Ellison, J.; Elmsheuser, J.; Eltzroth, J. T.; Elvira, V. D.; Eno, S.; Ermolov, P.; Eroshin, O. V.; Estrada, J.; Evans, D.; Evans, H.; Evdokimov, A.; Evdokimov, V. N.; Fagan, J.; Fast, J.; Fatakia, S. N.; Fein, D.; Feligioni, L.; Ferapontov, A. V.; Ferbel, T.; Ferreira, M. J.; Fiedler, F.; Filthaut, F.; Fisher, W.; Fisk, H. E.; Fleck, I.; Fitzpatrick, T.; Flattum, E.; Fleuret, F.; Flores, R.; Foglesong, J.; Fortner, M.; Fox, H.; Franklin, C.; Freeman, W.; Fu, S.; Fuess, S.; Gadfort, T.; Galea, C. F.; Gallas, E.; Galyaev, E.; Gao, M.; Garcia, C.; Garcia-Bellido, A.; Gardner, J.; Gavrilov, V.; Gay, A.; Gay, P.; Gelé, D.; Gelhaus, R.; Genser, K.; Gerber, C. E.; Gershtein, Y.; Gillberg, D.; Geurkov, G.; Ginther, G.; Gobbi, B.; Goldmann, K.; Golling, T.; Gollub, N.; Golovtsov, V.; Gómez, B.; Gomez, G.; Gomez, R.; Goodwin, R.; Gornushkin, Y.; Gounder, K.; Goussiou, A.; Graham, D.; Graham, G.; Grannis, P. D.; Gray, K.; Greder, S.; Green, D. R.; Green, J.; Green, J. A.; Greenlee, H.; Greenwood, Z. D.; Gregores, E. M.; Grinstein, S.; Gris, Ph.; Grivaz, J.-F.; Groer, L.; Grünendahl, S.; Grünewald, M. W.; Gu, W.; Guglielmo, J.; Gupta, A.; Gurzhiev, S. N.; Gutierrez, G.; Gutierrez, P.; Haas, A.; Hadley, N. J.; Haggard, E.; Haggerty, H.; Hagopian, S.; Hall, I.; Hall, R. E.; Han, C.; Han, L.; Hance, R.; Hanagaki, K.; Hanlet, P.; Hansen, S.; Harder, K.; Harel, A.; Harrington, R.; Hauptman, J. M.; Hauser, R.; Hays, C.; Hays, J.; Hazen, E.; Hebbeker, T.; Hebert, C.; Hedin, D.; Heinmiller, J. M.; Heinson, A. P.; Heintz, U.; Hensel, C.; Hesketh, G.; Hildreth, M. D.; Hirosky, R.; Hobbs, J. D.; Hoeneisen, B.; Hohlfeld, M.; Hong, S. J.; Hooper, R.; Hou, S.; Houben, P.; Hu, Y.; Huang, J.; Huang, Y.; Hynek, V.; Huffman, D.; Iashvili, I.; Illingworth, R.; Ito, A. S.; Jabeen, S.; Jacquier, Y.; Jaffré, M.; Jain, S.; Jain, V.; Jakobs, K.; Jayanti, R.; Jenkins, A.; Jesik, R.; Jiang, Y.; Johns, K.; Johnson, M.; Johnson, P.; Jonckheere, A.; Jonsson, P.; Jöstlein, H.; Jouravlev, N.; Juarez, M.; Juste, A.; Kaan, A. P.; Kado, M. M.; Käfer, D.; Kahl, W.; Kahn, S.; Kajfasz, E.; Kalinin, A. M.; Kalk, J.; Kalmani, S. D.; Karmanov, D.; Kasper, J.; Katsanos, I.; Kau, D.; Kaur, R.; Ke, Z.; Kehoe, R.; Kermiche, S.; Kesisoglou, S.; Khanov, A.; Kharchilava, A.; Kharzheev, Y. M.; Kim, H.; Kim, K. H.; Kim, T. J.; Kirsch, N.; Klima, B.; Klute, M.; Kohli, J. M.; Konrath, J.-P.; Komissarov, E. V.; Kopal, M.; Korablev, V. M.; Kostritski, A.; Kotcher, J.; Kothari, B.; Kotwal, A. V.; Koubarovsky, A.; Kozelov, A. V.; Kozminski, J.; Kryemadhi, A.; Kouznetsov, O.; Krane, J.; Kravchuk, N.; Krempetz, K.; Krider, J.; Krishnaswamy, M. R.; Krzywdzinski, S.; Kubantsev, M.; Kubinski, R.; Kuchinsky, N.; Kuleshov, S.; Kulik, Y.; Kumar, A.; Kunori, S.; Kupco, A.; Kurča, T.; Kvita, J.; Kuznetsov, V. E.; Kwarciany, R.; Lager, S.; Lahrichi, N.; Landsberg, G.; Larwill, M.; Laurens, P.; Lavigne, B.; Lazoflores, J.; Le Bihan, A.-C.; Le Meur, G.; Lebrun, P.; Lee, S. W.; Lee, W. M.; Leflat, A.; Leggett, C.; Lehner, F.; Leitner, R.; Leonidopoulos, C.; Leveque, J.; Lewis, P.; Li, J.; Li, Q. Z.; Li, X.; Lima, J. G. R.; Lincoln, D.; Lindenmeyer, C.; Linn, S. L.; Linnemann, J.; Lipaev, V. V.; Lipton, R.; Litmaath, M.; Lizarazo, J.; Lobo, L.; Lobodenko, A.; Lokajicek, M.; Lounis, A.; Love, P.; Lu, J.; Lubatti, H. J.; Lucotte, A.; Lueking, L.; Luo, C.; Lynker, M.; Lyon, A. L.; Machado, E.; Maciel, A. K. A.; Madaras, R. J.; Mättig, P.; Magass, C.; Magerkurth, A.; Magnan, A.-M.; Maity, M.; Makovec, N.; Mal, P. K.; Malbouisson, H. B.; Malik, S.; Malyshev, V. L.; Manakov, V.; Mao, H. S.; Maravin, Y.; Markley, D.; Markus, M.; Marshall, T.; Martens, M.; Martin, M.; Martin-Chassard, G.; Mattingly, S. E. K.; Matulik, M.; Mayorov, A. A.; McCarthy, R.; McCroskey, R.; McKenna, M.; McMahon, T.; Meder, D.; Melanson, H. L.; Melnitchouk, A.; Mendes, A.; Mendoza, D.; Mendoza, L.; Meng, X.; Merekov, Y. P.; Merkin, M.; Merritt, K. W.; Meyer, A.; Meyer, J.; Michaut, M.; Miao, C.; Miettinen, H.; Mihalcea, D.; Mikhailov, V.; Miller, D.; Mitrevski, J.; Mokhov, N.; Molina, J.; Mondal, N. K.; Montgomery, H. E.; Moore, R. W.; Moulik, T.; Muanza, G. S.; Mostafa, M.; Moua, S.; Mulders, M.; Mundim, L.; Mutaf, Y. D.; Nagaraj, P.; Nagy, E.; Naimuddin, M.; Nang, F.; Narain, M.; Narasimhan, V. S.; Narayanan, A.; Naumann, N. A.; Neal, H. A.; Negret, J. P.; Nelson, S.; Neuenschwander, R. T.; Neustroev, P.; Noeding, C.; Nomerotski, A.; Novaes, S. F.; Nozdrin, A.; Nunnemann, T.; Nurczyk, A.; Nurse, E.; O'Dell, V.; O'Neil, D. C.; Oguri, V.; Olis, D.; Oliveira, N.; Olivier, B.; Olsen, J.; Oshima, N.; Oshinowo, B. O.; Otero y Garzón, G. J.; Padley, P.; Papageorgiou, K.; Parashar, N.; Park, J.; Park, S. K.; Parsons, J.; Partridge, R.; Parua, N.; Patwa, A.; Pawloski, G.; Perea, P. M.; Perez, E.; Peters, O.; Pétroff, P.; Petteni, M.; Phaf, L.; Piegaia, R.; Pleier, M.-A.; Podesta-Lerma, P. L. M.; Podstavkov, V. M.; Pogorelov, Y.; Pol, M.-E.; Pompoš, A.; Polosov, P.; Pope, B. G.; Popkov, E.; Porokhovoy, S.; Prado da Silva, W. L.; Pritchard, W.; Prokhorov, I.; Prosper, H. B.; Protopopescu, S.; Przybycien, M. B.; Qian, J.; Quadt, A.; Quinn, B.; Ramberg, E.; Ramirez-Gomez, R.; Rani, K. J.; Ranjan, K.; Rao, M. V. S.; Rapidis, P. A.; Rapisarda, S.; Raskowski, J.; Ratoff, P. N.; Ray, R. E.; Reay, N. W.; Rechenmacher, R.; Reddy, L. V.; Regan, T.; Renardy, J.-F.; Reucroft, S.; Rha, J.; Ridel, M.; Rijssenbeek, M.; Ripp-Baudot, I.; Rizatdinova, F.; Robinson, S.; Rodrigues, R. F.; Roco, M.; Rotolo, C.; Royon, C.; Rubinov, P.; Ruchti, R.; Rucinski, R.; Rud, V. I.; Russakovich, N.; Russo, P.; Sabirov, B.; Sajot, G.; Sánchez-Hernández, A.; Sanders, M. P.; Santoro, A.; Satyanarayana, B.; Savage, G.; Sawyer, L.; Scanlon, T.; Schaile, D.; Schamberger, R. D.; Scheglov, Y.; Schellman, H.; Schieferdecker, P.; Schmitt, C.; Schwanenberger, C.; Schukin, A. A.; Schwartzman, A.; Schwienhorst, R.; Sengupta, S.; Severini, H.; Shabalina, E.; Shamim, M.; Shankar, H. C.; Shary, V.; Shchukin, A. A.; Sheahan, P.; Shephard, W. D.; Shivpuri, R. K.; Shishkin, A. A.; Shpakov, D.; Shupe, M.; Sidwell, R. A.; Simak, V.; Sirotenko, V.; Skow, D.; Skubic, P.; Slattery, P.; Smith, D. E.; Smith, R. P.; Smolek, K.; Snow, G. R.; Snow, J.; Snyder, S.; Söldner-Rembold, S.; Song, X.; Song, Y.; Sonnenschein, L.; Sopczak, A.; Sorín, V.; Sosebee, M.; Soustruznik, K.; Souza, M.; Spartana, N.; Spurlock, B.; Stanton, N. R.; Stark, J.; Steele, J.; Stefanik, A.; Steinberg, J.; Steinbrück, G.; Stevenson, K.; Stolin, V.; Stone, A.; Stoyanova, D. A.; Strandberg, J.; Strang, M. A.; Strauss, M.; Ströhmer, R.; Strom, D.; Strovink, M.; Stutte, L.; Sumowidagdo, S.; Sznajder, A.; Talby, M.; Tentindo-Repond, S.; Tamburello, P.; Taylor, W.; Telford, P.; Temple, J.; Terentyev, N.; Teterin, V.; Thomas, E.; Thompson, J.; Thooris, B.; Titov, M.; Toback, D.; Tokmenin, V. V.; Tolian, C.; Tomoto, M.; Tompkins, D.; Toole, T.; Torborg, J.; Touze, F.; Towers, S.; Trefzger, T.; Trincaz-Duvoid, S.; Trippe, T. G.; Tsybychev, D.; Tuchming, B.; Tully, C.; Turcot, A. S.; Tuts, P. M.; Utes, M.; Uvarov, L.; Uvarov, S.; Uzunyan, S.; Vachon, B.; van den Berg, P. J.; van Gemmeren, P.; Van Kooten, R.; van Leeuwen, W. M.; Varelas, N.; Varnes, E. W.; Vartapetian, A.; Vasilyev, I. A.; Vaupel, M.; Vaz, M.; Verdier, P.; Vertogradov, L. S.; Verzocchi, M.; Vigneault, M.; Villeneuve-Seguier, F.; Vishwanath, P. R.; Vlimant, J.-R.; Von Toerne, E.; Vorobyov, A.; Vreeswijk, M.; Vu Anh, T.; Vysotsky, V.; Wahl, H. D.; Walker, R.; Wallace, N.; Wang, L.; Wang, Z.-M.; Warchol, J.; Warsinsky, M.; Watts, G.; Wayne, M.; Weber, M.; Weerts, H.; Wegner, M.; Wermes, N.; Wetstein, M.; White, A.; White, V.; Whiteson, D.; Wicke, D.; Wijnen, T.; Wijngaarden, D. A.; Wilcer, N.; Willutzki, H.; Wilson, G. W.; Wimpenny, S. J.; Wittlin, J.; Wlodek, T.; Wobisch, M.; Womersley, J.; Wood, D. R.; Wyatt, T. R.; Wu, Z.; Xie, Y.; Xu, Q.; Xuan, N.; Yacoob, S.; Yamada, R.; Yan, M.; Yarema, R.; Yasuda, T.; Yatsunenko, Y. A.; Yen, Y.; Yip, K.; Yoo, H. D.; Yoffe, F.; Youn, S. W.; Yu, J.; Yurkewicz, A.; Zabi, A.; Zanabria, M.; Zatserklyaniy, A.; Zdrazil, M.; Zeitnitz, C.; Zhang, B.; Zhang, D.; Zhang, X.; Zhao, T.; Zhao, Z.; Zheng, H.; Zhou, B.; Zhou, B.; Zhu, J.; Zielinski, M.; Zieminska, D.; Zieminski, A.; Zitoun, R.; Zmuda, T.; Zutshi, V.; Zviagintsev, S.; Zverev, E. G.; Zylberstejn, A.

    2006-09-01

    The DØ experiment enjoyed a very successful data-collection run at the Fermilab Tevatron collider between 1992 and 1996. Since then, the detector has been upgraded to take advantage of improvements to the Tevatron and to enhance its physics capabilities. We describe the new elements of the detector, including the silicon microstrip tracker, central fiber tracker, solenoidal magnet, preshower detectors, forward muon detector, and forward proton detector. The uranium/liquid-argon calorimeters and central muon detector, remaining from Run I, are discussed briefly. We also present the associated electronics, triggering, and data acquisition systems, along with the design and implementation of software specific to DØ.

  9. The MINOS detectors

    SciTech Connect

    Habig, A.; Grashorn, E.W.; /Minnesota U., Duluth

    2005-07-01

    The Main Injector Neutrino Oscillation Search (MINOS) experiment's primary goal is the precision measurement of the neutrino oscillation parameters in the atmospheric neutrino sector. This long-baseline experiment uses Fermilab's NuMI beam, measured with a Near Detector at Fermilab, and again 735 km later using a Far Detector in the Soudan Mine Underground Lab in northern Minnesota. The detectors are magnetized iron/scintillator calorimeters. The Far Detector has been operational for cosmic ray and atmospheric neutrino data from July of 2003, the Near Detector from September 2004, and the NuMI beam started in early 2005. This poster presents details of the two detectors.

  10. The MINDView brain PET detector, feasibility study based on SiPM arrays

    NASA Astrophysics Data System (ADS)

    González, Antonio J.; Majewski, Stan; Sánchez, Filomeno; Aussenhofer, Sebastian; Aguilar, Albert; Conde, Pablo; Hernández, Liczandro; Vidal, Luis F.; Pani, Roberto; Bettiol, Marco; Fabbri, Andrea; Bert, Julien; Visvikis, Dimitris; Jackson, Carl; Murphy, John; O'Neill, Kevin; Benlloch, Jose M.

    2016-05-01

    The Multimodal Imaging of Neurological Disorders (MINDView) project aims to develop a dedicated brain Positron Emission Tomography (PET) scanner with sufficient resolution and sensitivity to visualize neurotransmitter pathways and their disruptions in mental disorders for diagnosis and follow-up treatment. The PET system should be compact and fully compatible with a Magnetic Resonance Imaging (MRI) device in order to allow its operation as a PET brain insert in a hybrid imaging setup with most MRI scanners. The proposed design will enable the currently-installed MRI base to be easily upgraded to PET/MRI systems. The current design for the PET insert consists of a 3-ring configuration with 20 modules per ring and an axial field of view of ~15 cm and a geometrical aperture of ~33 cm in diameter. When coupled to the new head Radio Frequency (RF) coil, the inner usable diameter of the complete PET-RF coil insert is reduced to 26 cm. Two scintillator configurations have been tested, namely a 3-layer staggered array of LYSO with 1.5 mm pixel size, with 35×35 elements (6 mm thickness each) and a black-painted monolithic LYSO block also covering about 50×50 mm2 active area with 20 mm thickness. Laboratory test results associated with the current MINDView PET module concept are presented in terms of key parameters' optimization, such as spatial and energy resolution, sensitivity and Depth of Interaction (DOI) capability. It was possible to resolve all pixel elements from the three scintillator layers with energy resolutions as good as 10%. The monolithic scintillator showed average detector resolutions varying from 3.5 mm in the entrance layer to better than 1.5 mm near the photosensor, with average energy resolutions of about 17%.

  11. Development of high-efficiency, thin-film CdTe solar cells. Final subcontract report, 1 February 1992--30 November 1995

    SciTech Connect

    Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A.

    1996-01-01

    This report describes work performed by the Georgia Institute of Technology (GIT) to bring the polycrystalline CdTe cell efficiency a step closer to the practically achievable efficiency of 18% through fundamental understanding of detects and loss mechanisms, the role of chemical and heat treatments, and investigation of now process techniques. The objective was addressed by a combination of in-depth characterization, modeling, materials growth, device fabrication, and `transport analyses of Au/Cu/CdTe/CdS/SnO {sub 2} glass front-wall heterojunction solar cells. GiT attempted to understand the loss mechanism(s) in each layer and interface by a step-by-step investigation of this multilayer cell structure. The first step was to understand, quantify, and reduce the reflectance and photocurrent loss in polycrystalline CdTe solar calls. The second step involved the investigation of detects and loss mechanisms associated with the CdTe layer and the CdTe/CdS interface. The third stop was to investigate the effect of chemical and heat treatments on CdTe films and cells. The fourth step was to achieve a better and reliable contact to CdTe solar cells by improving the fundamental understanding. Of the effects of Cu on cell efficiency. Finally, the research involved the investigation of the effect of crystallinity and grain boundaries on Cu incorporation in the CdTe films, including the fabrication of CdTe solar calls with larger CdTe grain size.

  12. A computational ab initio study of surface diffusion of sulfur on the CdTe (111) surface

    NASA Astrophysics Data System (ADS)

    Naderi, Ebadollah; Ghaisas, S. V.

    2016-08-01

    In order to discern the formation of epitaxial growth of CdS shell over CdTe nanocrystals, kinetics related to the initial stages of the growth of CdS on CdTe is investigated using ab-initio methods. We report diffusion of sulfur adatom on the CdTe (111) A-type (Cd-terminated) and B-type (Te-terminated) surfaces within the density functional theory (DFT). The barriers are computed by applying the climbing Nudge Elastic Band (c-NEB) method. From the results surface hopping emerges as the major mode of diffusion. In addition, there is a distinct contribution from kick-out type diffusion in which a CdTe surface atom is kicked out from its position and is replaced by the diffusing sulfur atom. Also, surface vacancy substitution contributes to the concomitant dynamics. There are sites on the B- type surface that are competitively close in terms of the binding energy to the lowest energy site of epitaxy on the surface. The kick-out process is more likely for B-type surface where a Te atom of the surface is displaced by a sulfur adatom. Further, on the B-type surface, subsurface migration of sulfur is indicated. Furthermore, the binding energies of S on CdTe reveal that on the A-type surface, epitaxial sites provide relatively higher binding energies and barriers than on B-type.

  13. Crystal growth of CdTe in space and thermal field effects on mass flux and morphology

    NASA Technical Reports Server (NTRS)

    Wiedemeier, H.

    1988-01-01

    The primary, long-range goals are the development of vapor phase crystal growth experiments, and the growth of technologically useful crystals in space. The necessary ground-based studies include measurements of the effects of temperature variations on the mass flux and crystal morphology in vapor-solid growth processes. For in-situ mass flux measurements dynamic microbalance techniques will be employed. Crystal growth procedures and equipment will be developed to be compatible with microgravity conditions and flight requirements. Emphasis was placed on the further development of crystal growth and the investigation of relevant transport properties of CdTe. The dependence of the mass flux on source temperature was experimentally established. The CdTe synthesis and pretreatment procedures are being developed that yield considerable improvements in mass transport rates, and mass fluxes which are independent of the amount of source material. A higher degree of stoichiometric control of CdTe than before was achieved during this period of investigation. Based on this, a CdTe crystal growth experiment, employing physical vapor transport, yielded very promising results. Optical microscopy and X-ray diffraction studies revealed that the boule contained several large sized crystal grains of a high degree of crystallinity. Further characterization studies of CdTe crystals are in progress. The reaction chamber, furnace dimensions, and ampoule location of the dynamic microbalance system were modified in order to minimize radiation effects on the balance performance.

  14. SEMICONDUCTOR PHYSICS: Effects of Sn-doping on morphology and optical properties of CdTe polycrystalline films

    NASA Astrophysics Data System (ADS)

    Jin, Li; Linyu, Yang; Jikang, Jian; Hua, Zou; Yanfei, Sun

    2009-11-01

    Sn-doped CdTe polycrystalline films were successfully deposited on ITO glass substrates by close space sublimation. The effects of Sn-doping on the microstructure, surface morphology, and optical properties of polycrystalline films were studied using X-ray diffraction, scanning electron microscopy, and ultraviolet-visible spectrophotometry, respectively. The results show that the lower molar ratio of Sn and CdTe conduces to a strongly preferential orientation of (111) in films and a larger grain size, which indicates that the crystallinity of films can be improved by appropriate Sn-doping. As the molar ratio of Sn and CdTe increases, the preferential orientation of (111) in films becomes weaker, the grain size becomes smaller, and the crystal boundary becomes indistinct, which indicates that the crystallization growth of films is incomplete. However, as the Sn content increases, optical absorption becomes stronger in the visible region. In summary, a strongly preferential orientation of (111) in films and a larger grain size can be obtained by appropriate Sn-doping (molar ratio of Sn : CdTe = 0.06 : 1), while the film retains a relatively high optical absorption in the visible region. However, Sn-doping has no obvious influence on the energy gap of CdTe films.

  15. X-ray absorption fine structure study of aging behavior of oxidized copper in CdTe films

    SciTech Connect

    Liu, Xiangxin; Compaan, A.D.; Terry, J.

    2005-10-19

    We have used the MR-CAT beamline of the Advanced Photon Source at Argonne National Laboratory to study the fine structure in the Cu K-edge X-ray absorption in 2 {micro}m thick polycrystalline films of CdTe on fused silica. 4 nm of evaporated Cu is diffused either with or without prior vapor CdCl{sub 2} treatments in dry air. The phase-uncorrected radial distribution function inferred from the absorption fine structure indicates predominantly Cu{sub 2}Te when Cu is diffused into the as-deposited CdTe film but indicates a Cu{sub 2}O environment when Cu is diffused after the vapor CdCl{sub 2} treatment. We believe most of the diffused Cu decorates grain boundaries as oxides, consistent with the low doping densities typically observed in CdTe solar cells. This Cu{sub 2}O likely plays a role in grain-boundary passivation. We also found that the chemical environment around Cu atoms in both CdTe and real cells can change with light soaking. This instability of Cu{sub 2}O in sputtered CdTe could contribute to cell degradation.

  16. Development of CZT strip detector modules for 0.05- to 1-MeV gamma-ray imaging and spectroscopy

    NASA Astrophysics Data System (ADS)

    Ryan, James M.; Donmez, B.; Macri, John R.; McClish, Mickel; McConnell, Mark L.; Miller, Richard S.; Widholm, Mark; Hamel, Louis-Andre; Julien, Manuel

    2003-03-01

    We report progress in our study of cadmium zinc telluride (CZT) strip detectors featuring orthogonal coplanar anode contacts. We specifically report on the performance, characterization and stability of 5 and 10 mm thick prototype CZT detectors fabricated using material from several manufacturers. Our ongoing work includes laboratory and simulation studies aimed at optimizing and developing compact, efficient, high performance detector modules for 0.05 to 1 MeV gamma radiation measurements with space-based instrumentation. The coplanar anode strip configuration retains many of the performance advantages of pixel detectors yet requires far fewer electronic channels to perform both 3-d imaging and spectroscopy. Minimizing the channel count is important for large balloon or space instruments including coded aperture telescopes (such as MARGIE or EXIST) and Compton imaging telescopes (such as TIGRE or ACT). We also present plans for developing compact, space qualified imaging modules designed for integration into closely packed large area detector arrays. We discuss issues associated with detector module and array electronics design and development.

  17. Tin Can Radiation Detector.

    ERIC Educational Resources Information Center

    Crull, John L.

    1986-01-01

    Provides instructions for making tin can radiation detectors from empty aluminum cans, aluminum foil, clear plastic, copper wire, silica gel, and fine, unwaxed dental floss put together with tape or glue. Also provides suggestions for activities using the detectors. (JN)

  18. Segmented pyroelector detector

    DOEpatents

    Stotlar, S.C.; McLellan, E.J.

    1981-01-21

    A pyroelectric detector is described which has increased voltage output and improved responsivity over equivalent size detectors. The device comprises a plurality of edge-type pyroelectric detectors which have a length which is much greater than the width of the segments between the edge-type electrodes. External circuitry connects the pyroelectric detector segments in parallel to provide a single output which maintains 50 ohm impedance characteristics.

  19. Gamma ray detector shield

    DOEpatents

    Ohlinger, R.D.; Humphrey, H.W.

    1985-08-26

    A gamma ray detector shield comprised of a rigid, lead, cylindrical-shaped vessel having upper and lower portions with an pneumatically driven, sliding top assembly. Disposed inside the lead shield is a gamma ray scintillation crystal detector. Access to the gamma detector is through the sliding top assembly.

  20. LGB neutron detector

    NASA Astrophysics Data System (ADS)

    Quist, Nicole

    2012-10-01

    The double pulse signature of the Gadolinium Lithium Borate Cerium doped plastic detector suggests its effectiveness for analyzing neutrons while providing gamma ray insensitivity. To better understand this detector, a californium gamma/neutron time of flight facility was constructed in our lab. Reported here are efforts to understand the properties and applications of the LGB detector with regards to neutron spectroscopy.

  1. Tevatron Detector Upgrades

    SciTech Connect

    Lipton, Ronald

    2005-03-22

    The D0 and CDF experiments are in the process of upgrading their detectors to cope with the high luminosities projected for the remainder of Tevatron Run II. We discuss the expected Tevatron environment through 2009, the detector challenges due to increasing luminosity in this period, and the solutions undertaken by the two experiments to mitigate detector problems and maximize physics results.

  2. Tevatron detector upgrades

    SciTech Connect

    Lipton, R.; /Fermilab

    2005-01-01

    The D0 and CDF experiments are in the process of upgrading their detectors to cope with the high luminosities projected for the remainder of Tevatron Run II. They discuss the expected Tevatron environment through 2009, the detector challenges due to increasing luminosity in this period, and the solutions undertaken by the two experiments to mitigate detector problems and maximize physics results.

  3. NUV Detector Dark Monitor

    NASA Astrophysics Data System (ADS)

    Zheng, Wei

    2010-09-01

    Perform routine monitoring of MAMA detector dark current. The main purpose isto look for evidence of a change in the dark rates, both to track on-orbit timedependence and to check for a detector problem developing. The spatial distribution of dark rates on the detector and the effect of SAA will also be studied.

  4. NUV Detector Dark Monitor

    NASA Astrophysics Data System (ADS)

    Ely, Justin

    2013-10-01

    Perform routine monitoring of MAMA detector dark current. The main purpose isto look for evidence of a change in the dark rates, both to track on-orbit timedependence and to check for a detector problem developing. The spatial distribution of dark rates on the detector and the effect of SAA will also be studied.

  5. NUV Detector Dark Monitor

    NASA Astrophysics Data System (ADS)

    Ely, Justin

    2012-10-01

    Perform routine monitoring of MAMA detector dark current. The main purpose isto look for evidence of a change in the dark rates, both to track on-orbit timedependence and to check for a detector problem developing. The spatial distribution of dark rates on the detector and the effect of SAA will also be studied.

  6. NUV Detector Dark Monitor

    NASA Astrophysics Data System (ADS)

    Cox, Colin

    2011-10-01

    Perform routine monitoring of MAMA detector dark current. The main purpose isto look for evidence of a change in the dark rates, both to track on-orbit timedependence and to check for a detector problem developing. The spatial distribution of dark rates on the detector and the effect of SAA will also be studied.

  7. Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates

    NASA Astrophysics Data System (ADS)

    Lu, Jing; DiNezza, Michael J.; Zhao, Xin-Hao; Liu, Shi; Zhang, Yong-Hang; Kovacs, Andras; Dunin-Borkowski, Rafal E.; Smith, David J.

    2016-04-01

    A series of three CdTe/MgxCd1-xTe (x~0.24) double heterostructures grown by molecular beam epitaxy on InSb (001) substrates at temperatures in the range of 235-295 °C have been studied using conventional and advanced electron microscopy techniques. Defect analysis based on bright-field electron micrographs indicates that the structure grown at 265 °C has the best structural quality of the series, while structures grown at 30 °C lower or higher temperature show highly defective morphology. Geometric phase analysis of the CdTe/InSb interface for the sample grown at 265 °C reveals minimal interfacial elastic strain, and there is no visible evidence of interfacial defect formation in aberration-corrected electron micrographs of this particular sample. Such high quality CdTe epitaxial layers should provide the basis for applications such as photo-detectors and multi-junction solar cells.

  8. Nitric-phosphoric acid etching effects on the surface chemical composition of CdTe thin film.

    NASA Astrophysics Data System (ADS)

    Irfan, Irfan; Ding, Huanjun; Xia, Wei; Lin, Hao; Tang, Ching W.; Gao, Yongli

    2009-03-01

    Nitric-phosphoric (NP) acid etching has been regarded as one of the most successful methods for the formation of low resistance back contact with the metal electrode in CdTe based solar cells. We report back surface chemical composition for eight different durations of NP etching of CdTe polycrystalline thin film. We studied the surfaces with x-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS), inverse photoemission spectroscopy (IEPS) and atomic force microscopy (AFM). Etching dependence on the back surface composition and electronic structure was observed. Valence and conduction band shifts relative to the Fermi level of the system with different etching duration were analyzed. The sample was left in open ambient condition for three weeks and XPS data were obtained again in order to study the difference in surface chemical composition with the pristine CdTe film. Unetched and highly etched part of the sample were sputtered and the depth profile analyzed.

  9. Fabrication of polycrystalline CdTe thin-film solar cells using carbon electrodes with carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Okamoto, Tamotsu; Hayashi, Ryoji; Ogawa, Yohei; Hosono, Aikyo; Doi, Makoto

    2015-04-01

    The effects of adding carbon nanotubes (CNTs) to carbon back electrodes in polycrystalline CdTe thin-film solar cells were investigated. The CNTs were prepared by arc discharge under atmospheric pressure. The conductivity of the obtained CNT film with a density of 1.65 g/cm3 was approximately 2.6 × 103 S/cm. In the CdTe solar cells using carbon back electrodes with CNTs, the fill factor (FF) was improved as a result of adding CNTs with a concentration of 1 to 5 wt %. The improvement of FF was mainly due to the decrease in the series resistance of the CdTe solar cell. Furthermore, the open-circuit voltage (VOC) was improved by the CNT addition. The improvement of VOC was probably due to the reduction of the back barrier at the back contact.

  10. Indium doping of CdTe polycrystalline films prepared by co-sputtering of CdTe-In-Cd targets

    NASA Astrophysics Data System (ADS)

    Becerril, M.; Zelaya-Angel, O.; Ramírez-Bon, R.; Espinoza-Beltrán, F. J.; González-Hernández, J.

    1997-01-01

    Indium doped CdTe polycrystalline films were grown on Corning glass substrates at room temperature by co-sputtering from a CdTe-Cd-In target. The elemental Cd and In were glued onto the CdTe target covering small areas. The electrical, structural, and optical properties were analyzed as a function of the concentration of both elements. It was found that when Cd and In are simultaneously incorporated, the electrical resistivity drops and the carrier concentration increases. In both cases the changes are of several orders of magnitude. From the results, we conclude that, using this deposition technique, n-type In doped CdTe polycrystalline films can be produced.

  11. Extrinsic doped n- and p-type CdTe layers grown by organometallic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Taskar, N. R.; Natarajan, V.; Bhat, I. B.; Grandhi, S. K.

    1988-01-01

    In this paper we report on the extrinsic n- and p-doping of CdTe layers, grown by organometallic vapor phase epitaxy. Triethylindium and arsine gas were used as n- and p-type dopants respectively, with doping levels of around 1017 cm-3 in both cases. Layers were grown on both semi-insulating CdTe and GaAs substrates. Layers grown on semi-insulating GaAs had an intervening 1-2 μm undoped CdTe layer to relieve the strain caused by the large (14.6%) lattice mismatch of the CdTe-GaAs combination. Van der Pauw measurements were made to evaluate the quality of these layers, and mobility values as high as 3600 cm2/V h- s obtained at 40 K for lightly doped n-type samples. Grown junctions, made using extrinsic doped layers, have resulted in diodes with excellent electrical characteristics.

  12. Extrinsic doped n- and p-type CdTe layers grown by organometallic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Taskar, N. R.; Natarajan, V.; Bhat, I. B.; Grandhi, S. K.

    1990-01-01

    In this paper we report on the extrinsic n- and p-doping of CdTe layers, grown by organometallic vapor phase epitaxy. Triethylindium and arsine gas were used as n- and p-type dopants respectively, with doping levels of around 10 17 cm -3 in both cases. Layers were grown on both semi-insulating CdTe and GaAs substrates. Layers grown on semi-insulating GaAs had an intervening 1-2 μm undoped CdTe layer to relieve the strain caused by the large (14.6%) lattice mismatch of the CdTe-GaAs combination. Van der Pauw measurements were made to evaluate the quality of these layers, and mobility values as high as 3600 cm 2/V h- s obtained at 40 K for lightly doped n-type samples. Grown junctions, made using extrinsic doped layers, have resulted in diodes with excellent electrical characteristics.

  13. Raman scattering and anti-Stokes emission from a single spherical microcavity with a CdTe quantum dot monolayer

    NASA Astrophysics Data System (ADS)

    Rakovich, Yu. P.; Donegan, J. F.; Gaponik, N.; Rogach, A. L.

    2003-09-01

    We have studied the Raman and luminescence spectra of a microcavity-quantum dot system consisting of a melamine formaldehyde latex microsphere coated by CdTe colloidal quantum dots. The cavity-induced enhancement of the Raman scattering allows the observation of Raman spectra from only a monolayer of CdTe quantum dots. Periodic structure with very narrow peaks in the luminescence spectra of a single microsphere was detected arising from the coupling between the emission from quantum dots and spherical cavity modes. Strong anti-Stokes emission from CdTe quantum dots coupled to the cavity modes was observed using low intensity below band-gap excitation and attributed to the strong field enhancement at the microcavity resonances.

  14. Mathematical and numerical models of CdTe deposition in a pre-cracking metalorganic chemical vapour deposition reactor

    NASA Astrophysics Data System (ADS)

    Davis, T. J.; McAllister, T.; Maslen, V.; Wilkins, S. W.; Faith, M.; Leech, P.

    1993-10-01

    A mathematical model is used to calculate the deposition profile of CdTe in a horizontal pre-cracker metalorganic chemical vapour deposition (MOCVD) reactor. The model is solved numerically in two dimensions, yielding the temperature profile in the reactor and the concentrations of chemical species. The calculated deposition profiles are compared with growths of CdTe on glass. With appropriate approximations, the model is reduced to a simple form which is solved analytically. This model has enabled us to identify the cause of the non-uniformity in the deposition profile as a variation in the rate of supply of metal vapour. By optimizing the reactor temperature and the gas flow rates, high-uniformity CdTe films have been grown on GaAs substrates.

  15. Design for a high-resolution small-animal spect system usingpixellated Si(Li) detectors for in vivo Iodine-125 imaging

    SciTech Connect

    Choong, Woon-Seng; Moses, William W.; Tindall, Craig S.; Luke,Paul N.

    2004-08-01

    We propose a design for a high-resolution single-photon emission computed tomography (SPECT) system for in vivo {sup 125}I imaging in small animal using pixellated lithium-drifted silicon (Si(Li)) detectors. The proposed detectors are expected to have high interaction probability (>90%), good energy resolution (<15% FWHM), and good intrinsic spatial resolution ({approx}1 mm FWHM). The SPECT system will consist of a dual head detector geometry with the distance between the detectors ranging 30-50 mm to minimize the imaging distance between the mouse and the detectors. The detectors, each with an active area of 64 mm x 40 mm (64 x 40 array of 1 mm{sup 2} pixels and a 6 mm thick Si(Li) detector), will be mounted on a rotating gantry with an axial field-of-view of 64 mm. The detector signals will be read out by custom application-specific integrated circuits (ASICs). Using a high-resolution parallel-hole collimator, the expected spatial resolution is 1.6 mm FWHM at an imaging distance of 20 mm, and sensitivity is 6.7 cps/{micro}Ci. {sup 125}I is a readily available radioisotope with a long half-life of 59.4 days and it is commonly used to label biological compounds in molecular biology. Conventional gamma cameras are not optimized to detect the low emission energies (27 to 35 keV) of {sup 125}I. However, Si(Li) detector provides an ideal solution for detecting the low-energy emissions of {sup 125}I. In addition to presenting the design of the system, this paper presents a feasibility study of using Si(Li) detectors to detect the emissions of {sup 125}I.

  16. High-energy detector

    DOEpatents

    Bolotnikov, Aleksey E.; Camarda, Giuseppe; Cui, Yonggang; James, Ralph B.

    2011-11-22

    The preferred embodiments are directed to a high-energy detector that is electrically shielded using an anode, a cathode, and a conducting shield to substantially reduce or eliminate electrically unshielded area. The anode and the cathode are disposed at opposite ends of the detector and the conducting shield substantially surrounds at least a portion of the longitudinal surface of the detector. The conducting shield extends longitudinally to the anode end of the detector and substantially surrounds at least a portion of the detector. Signals read from one or more of the anode, cathode, and conducting shield can be used to determine the number of electrons that are liberated as a result of high-energy particles impinge on the detector. A correction technique can be implemented to correct for liberated electron that become trapped to improve the energy resolution of the high-energy detectors disclosed herein.

  17. Determination of 235U enrichment with a large volume CZT detector

    NASA Astrophysics Data System (ADS)

    Mortreau, Patricia; Berndt, Reinhard

    2006-01-01

    Room-temperature CdZnTe and CdTe detectors have been routinely used in the field of Nuclear Safeguards for many years [Ivanov et al., Development of large volume hemispheric CdZnTe detectors for use in safeguards applications, ESARDA European Safeguards Research and Development Association, Le Corum, Montpellier, France, 1997, p. 447; Czock and Arlt, Nucl. Instr. and Meth. A 458 (2001) 175; Arlt et al., Nucl. Instr. and Meth. A 428 (1999) 127; Lebrun et al., Nucl. Instr. and Meth. A 448 (2000) 598; Aparo et al., Development and implementation of compact gamma spectrometers for spent fuel measurements, in: Proceedings, 21st Annual ESARDA, 1999; Arlt and Rudsquist, Nucl. Instr. and Meth. A 380 (1996) 455; Khusainov et al., High resolution pin type CdTe detectors for the verification of nuclear material, in: Proceedings, 17th Annual ESARDA European Safeguards Research and Development Association, 1995; Mortreau and Berndt, Nucl. Instr. and Meth. A 458 (2001) 183; Ruhter et al., UCRL-JC-130548, 1998; Abbas et al., Nucl. Instr. and Meth. A 405 (1998) 153; Ruhter and Gunnink, Nucl. Instr. and Meth. A 353 (1994) 716]. Due to their performance and small size, they are ideal detectors for hand-held applications such as verification of spent and fresh fuel, U/Pu attribute tests as well as for the determination of 235U enrichment. The hemispherical CdZnTe type produced by RITEC (Riga, Latvia) [Ivanov et al., 1997] is the most widely used detector in the field of inspection. With volumes ranging from 2 to 1500 mm 3, their spectral performance is such that the use of electronic processing to correct the pulse shape is not required. This paper reports on the work carried out with a large volume (15×15×7.5 mm 3) and high efficiency hemispherical CdZnTe detector for the determination of 235U enrichment. The measurements were made with certified uranium samples whose enrichment ranging from 0.31% to 92.42%, cover the whole range of in-field measurement conditions. The interposed

  18. A piecewise-focused high DQE detector for MV imaging

    PubMed Central

    Star-Lack, Josh; Shedlock, Daniel; Swahn, Dennis; Humber, Dave; Wang, Adam; Hirsh, Hayley; Zentai, George; Sawkey, Daren; Kruger, Isaac; Sun, Mingshan; Abel, Eric; Virshup, Gary; Shin, Mihye; Fahrig, Rebecca

    2015-01-01

    Purpose: Electronic portal imagers (EPIDs) with high detective quantum efficiencies (DQEs) are sought to facilitate the use of the megavoltage (MV) radiotherapy treatment beam for image guidance. Potential advantages include high quality (treatment) beam’s eye view imaging, and improved cone-beam computed tomography (CBCT) generating images with more accurate electron density maps with immunity to metal artifacts. One approach to increasing detector sensitivity is to couple a thick pixelated scintillator array to an active matrix flat panel imager (AMFPI) incorporating amorphous silicon thin film electronics. Cadmium tungstate (CWO) has many desirable scintillation properties including good light output, a high index of refraction, high optical transparency, and reasonable cost. However, due to the 0 1 0 cleave plane inherent in its crystalline structure, the difficulty of cutting and polishing CWO has, in part, limited its study relative to other scintillators such as cesium iodide and bismuth germanate (BGO). The goal of this work was to build and test a focused large-area pixelated “strip” CWO detector. Methods: A 361  ×  52 mm scintillator assembly that contained a total of 28 072 pixels was constructed. The assembly comprised seven subarrays, each 15 mm thick. Six of the subarrays were fabricated from CWO with a pixel pitch of 0.784 mm, while one array was constructed from BGO for comparison. Focusing was achieved by coupling the arrays to the Varian AS1000 AMFPI through a piecewise linear arc-shaped fiber optic plate. Simulation and experimental studies of modulation transfer function (MTF) and DQE were undertaken using a 6 MV beam, and comparisons were made between the performance of the pixelated strip assembly and the most common EPID configuration comprising a 1 mm-thick copper build-up plate attached to a 133 mg/cm2 gadolinium oxysulfide scintillator screen (Cu-GOS). Projection radiographs and CBCT images of phantoms were acquired. The work

  19. Direct Analysis of JV-Curves Applied to an Outdoor-Degrading CdTe Module (Presentation)

    SciTech Connect

    Jordan, D; Kurtz, S.; Ulbrich, C.; Gerber, A.; Rau, U.

    2014-03-01

    We present the application of a phenomenological four parameter equation to fit and analyze regularly measured current density-voltage JV curves of a CdTe module during 2.5 years of outdoor operation. The parameters are physically meaningful, i.e. the short circuit current density Jsc, open circuit voltage Voc and differential resistances Rsc, and Roc. For the chosen module, the fill factor FF degradation overweighs the degradation of Jsc and Voc. Interestingly, with outdoor exposure, not only the conductance at short circuit, Gsc, increases but also the Gsc(Jsc)-dependence. This is well explained with an increase in voltage dependent charge carrier collection in CdTe.

  20. Sodium chloride protected CdTe quantum dot based solid-state luminophores with high color quality and fluorescence efficiency

    NASA Astrophysics Data System (ADS)

    Kalytchuk, Sergii; Zhovtiuk, Olga; Rogach, Andrey L.

    2013-09-01

    We report on a series of fluorescent powders based on CdTe colloidal nanocrystals embedded into a protective NaCl matrix, which provide solid-state luminophores with emission colors covering the whole green to red spectral region of visible spectrum and enhanced fluorescence quantum yields comparing to the parent CdTe nanocrystals, unravelled by UV-vis absorption and diffuse reflectance measurements as well as by steady-state and time-resolved photoluminescence spectroscopy. Prototypes of hybrid light-emitting diodes of high color quality utilizing this kind of luminophores as a down-converting layer are demonstrated.

  1. High-efficiency CdTe thin-film solar cells using metalorganic chemical vapor deposition techniques

    NASA Technical Reports Server (NTRS)

    Nouhi, A.; Stirn, R. J.; Meyers, P. V.; Liu, C. H.

    1989-01-01

    Energy conversion efficiency of metalorganic chemical vapor deposited CdTe as an intrinsic active layer in n-i-p solar cell structures is reported. Small-area devices with efficiencies over 9 percent have been demonstrated. I-V characteristics, photospectral response, and the results of Auger profiling of structural composition for typical devices will be presented. Also presented are preliminary results on similar photovoltaic devices having Cd(0.85)Mn(0.15)Te in place of CdTe as an i layer.

  2. Physical properties of electron beam evaporated CdTe and CdTe:Cu thin films

    SciTech Connect

    Punitha, K.; Sivakumar, R.; Sanjeeviraja, C.; Sathe, Vasant; Ganesan, V.

    2014-12-07

    In this paper, we report on physical properties of pure and Cu doped cadmium telluride (CdTe) films deposited onto corning 7059 microscopic glass substrates by electron beam evaporation technique. X-ray diffraction study showed that all the deposited films belong to amorphous nature. The average transmittance of the films is varied between 77% and 90%. The optical energy band gap of pure CdTe film is 1.57 eV and it decreased to 1.47 eV upon 4 wt. % of Cu addition, which may be due to the extension of localized states in the band structure. The refractive index of the films was calculated using Swanepoel method. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (E{sub d}) parameters, dielectric constants, plasma frequency, and oscillator energy (E{sub o}) of CdTe and CdTe:Cu films were calculated and discussed in detail with the light of possible mechanisms underlying the phenomena. The variation in intensity of photoluminescence band edge emission peak observed at 820 nm with Cu dopant is due to the change in surface state density. The observed trigonal lattice of Te peaks in the micro-Raman spectra confirms the p-type conductive nature of films, which was further corroborated by the Hall effect measurement. The lowest resistivity of 6.61 × 10{sup 4} Ω cm was obtained for the CdTe:Cu (3 wt. %) film.

  3. High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011

    SciTech Connect

    Carmody, M.; Gilmore, A.

    2011-05-01

    The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.

  4. Temperature dependence of the electron spin g factor in CdTe and InP

    NASA Astrophysics Data System (ADS)

    Pfeffer, Pawel; Zawadzki, Wlodek

    2012-04-01

    Temperature dependence of the electron spin g factors in bulk CdTe and InP is calculated and compared with experiment. It is assumed that the only modification of the band structure related to temperature is a dilatation change in the fundamental energy gap. The dilatation changes of fundamental gaps are calculated for both materials using available experimental data. Computations of the band structures in the presence of a magnetic field are carried out employing five-level P.p model appropriate for medium-gap semiconductors. In particular, the model takes into account spin splitting due to bulk inversion asymmetry (BIA) of the materials. The resulting theoretical effective masses and g factors increase with electron energy due to band nonparabolicity. Average g values are calculated by summing over populated Landau and spin levels properly accounting for the thermal distribution of electrons in the band. It is shown that the spin splitting due to BIA in the presence of a magnetic field gives observable contributions to g values. Our calculations are in good agreement with experiments in the temperature range of 0 K to 300 K for CdTe and 0 K to 180 K for InP. The temperature dependence of g is stronger in CdTe than in InP due to different signs of band-edge g values in the two materials. Good agreement between the theory and experiments strongly indicates that the temperature dependence of spin g factors is correctly explained. In addition, we discuss formulas for the energy dependence of spin g factor due to band nonparabolicity, which are liable to misinterpretation.

  5. Improvement of the detector resolution in X-ray spectrometry by using the maximum entropy method

    NASA Astrophysics Data System (ADS)

    Fernández, Jorge E.; Scot, Viviana; Giulio, Eugenio Di; Sabbatucci, Lorenzo

    2015-11-01

    In every X-ray spectroscopy measurement the influence of the detection system causes loss of information. Different mechanisms contribute to form the so-called detector response function (DRF): the detector efficiency, the escape of photons as a consequence of photoelectric or scattering interactions, the spectrum smearing due to the energy resolution, and, in solid states detectors (SSD), the charge collection artifacts. To recover the original spectrum, it is necessary to remove the detector influence by solving the so-called inverse problem. The maximum entropy unfolding technique solves this problem by imposing a set of constraints, taking advantage of the known a priori information and preserving the positive-defined character of the X-ray spectrum. This method has been included in the tool UMESTRAT (Unfolding Maximum Entropy STRATegy), which adopts a semi-automatic strategy to solve the unfolding problem based on a suitable combination of the codes MAXED and GRAVEL, developed at PTB. In the past UMESTRAT proved the capability to resolve characteristic peaks which were revealed as overlapped by a Si SSD, giving good qualitative results. In order to obtain quantitative results, UMESTRAT has been modified to include the additional constraint of the total number of photons of the spectrum, which can be easily determined by inverting the diagonal efficiency matrix. The features of the improved code are illustrated with some examples of unfolding from three commonly used SSD like Si, Ge, and CdTe. The quantitative unfolding can be considered as a software improvement of the detector resolution.

  6. Hybrid Pixel Detectors for gamma/X-ray imaging

    NASA Astrophysics Data System (ADS)

    Hatzistratis, D.; Theodoratos, G.; Zografos, V.; Kazas, I.; Loukas, D.; Lambropoulos, C. P.

    2015-09-01

    Hybrid pixel detectors are made by direct converting high-Z semi-insulating single crystalline material coupled to complementary-metal-oxide semiconductor (CMOS) readout electronics. They are attractive because direct conversion exterminates all the problems of spatial localization related to light diffusion, energy resolution, is far superior from the combination of scintillation crystals and photomultipliers and lithography can be used to pattern electrodes with very fine pitch. We are developing 2-D pixel CMOS ASICs, connect them to pixilated CdTe crystals with the flip chip and bump bonding method and characterize the hybrids. We have designed a series of circuits, whose latest member consists of a 50×25 pixel array with 400um pitch and an embedded controller. In every pixel a full spectroscopic channel with time tagging information has been implemented. The detectors are targeting Compton scatter imaging and they can be used for coded aperture imaging too. Hybridization using CMOS can overcome the limit put on pixel circuit complexity by the use of thin film transistors (TFT) in large flat panels. Hybrid active pixel sensors are used in dental imaging and other applications (e.g. industrial CT etc.). Thus X-ray imaging can benefit from the work done on dynamic range enhancement methods developed initially for visible and infrared CMOS pixel sensors. A 2-D CMOS ASIC with 100um pixel pitch to demonstrate the feasibility of such methods in the context of X-ray imaging has been designed.

  7. Technical evaluation of Solar Cells, Inc., CdTe module and array at NREL

    SciTech Connect

    Kroposki, B.; Strand, T.; Hansen, R.; Powell, R.; Sasala, R.

    1996-05-01

    The Engineering and Technology Validation Team at the National Renewable Energy Laboratory (NREL) conducts in-situ technical evaluations of polycrystalline thin-film photovoltaic (PV) modules and arrays. This paper focuses on the technical evaluation of Solar Cells, Inc., (SCI) cadmium telluride (CdTe) module and array performance by attempting to correlate individual module and array performance. This is done by examining the performance and stability of the modules and array over a period of more than one year. Temperature coefficients for module and array parameters (P{sub max}, V{sub oc}, V{sub max}, I{sub sc}, I{sub max}) are also calculated.

  8. CdTe Quantum Dot/Dye Hybrid System as Photosensitizer for Photodynamic Therapy

    NASA Astrophysics Data System (ADS)

    Rakovich, Aliaksandra; Savateeva, Diana; Rakovich, Tatsiana; Donegan, John F.; Rakovich, Yury P.; Kelly, Vincent; Lesnyak, Vladimir; Eychmüller, Alexander

    2010-04-01

    We have studied the photodynamic properties of novel CdTe quantum dots—methylene blue hybrid photosensitizer. Absorption spectroscopy, photoluminescence spectroscopy, and fluorescence lifetime imaging of this system reveal efficient charge transfer between nanocrystals and the methylene blue dye. Near-infrared photoluminescence measurements provide evidence for an increased efficiency of singlet oxygen production by the methylene blue dye. In vitro studies on the growth of HepG2 and HeLa cancerous cells were also performed, they point toward an improvement in the cell kill efficiency for the methylene blue-semiconductor nanocrystals hybrid system.

  9. Grain boundaries in CdTe thin film solar cells: a review

    NASA Astrophysics Data System (ADS)

    Major, Jonathan D.

    2016-09-01

    The current state of knowledge on the impact of grain boundaries in CdTe solar cells is reviewed with emphasis being placed on working cell structures. The role of the chemical composition of grain boundaries as well as growth processes are discussed, along with characterisation techniques such as electron beam induced current and cathodoluminescence, which are capable of extracting information on a level of resolution comparable to the size of the grain boundaries. Work which attempts to relate grain boundaries to device efficiency is also assessed and gaps in the current knowledge are highlighted.

  10. Voltammetry as a Tool for Characterization of CdTe Quantum Dots

    PubMed Central

    Sobrova, Pavlina; Ryvolova, Marketa; Hubalek, Jaromir; Adam, Vojtech; Kizek, Rene

    2013-01-01

    Electrochemical detection of quantum dots (QDs) has already been used in numerous applications. However, QDs have not been well characterized using voltammetry, with respect to their characterization and quantification. Therefore, the main aim was to characterize CdTe QDs using cyclic and differential pulse voltammetry. The obtained peaks were identified and the detection limit (3 S/N) was estimated down to 100 fg/mL. Based on the convincing results, a new method for how to study stability and quantify the dots was suggested. Thus, the approach was further utilized for the testing of QDs stability. PMID:23807507

  11. Neutrino Detectors: Challenges and Opportunities

    SciTech Connect

    Soler, F. J. P.

    2011-10-06

    This paper covers possible detector options suitable at future neutrino facilities, such as Neutrino Factories, Super Beams and Beta Beams. The Magnetised Iron Neutrino Detector (MIND), which is the baseline detector at a Neutrino Factory, will be described and a new analysis which improves the efficiency of this detector at low energies will be shown. Other detectors covered include the Totally Active Scintillating Detectors (TASD), particularly relevant for a low energy Neutrino Factory, emulsion detectors for tau detection, liquid argon detectors and megaton scale water Cherenkov detectors. Finally the requirements of near detectors for long-baseline neutrino experiments will be demonstrated.

  12. Testing of multigap Resistive Plate Chambers for Electron Ion Collider Detector Development

    NASA Astrophysics Data System (ADS)

    Hamilton, Hannah; Phenix Collaboration

    2015-10-01

    Despite decades of research on the subject, some details of the spin structure of the nucleon continues to be unknown. To improve our knowledge of the nucleon spin structure, the construction of a new collider is needed. This is one of the primary goals of the proposed Electron Ion Collider (EIC). Planned EIC spectrometers will require good particle identification. This can be provided by time of flight (TOF) detectors with excellent timing resolutions of 10 ps. A potential TOF detector that could meet this requirement is a glass multigap resistive plate chamber (mRPC). These mRPCs can provide excellent timing resolution at a low cost. The current glass mRPC prototypes have a total of twenty 0.1 mm thick gas gaps. In order to test the feasibility of this design, a cosmic test stand was assembled. This stand used the coincidence of scintillators as a trigger, and contains fast electronics. The construction, the method of testing, and the test results of the mRPCs will be presented.

  13. Development of an ultra-low-power x-ray-photon-resolving imaging detector array

    NASA Astrophysics Data System (ADS)

    Sun, Shunming; Downey, Stephen; Gaalema, Stephen; Gates, James L.; Jernigan, J. Garrett; Kaaret, Philip; MacIntosh, Scott; Ramsey, Brian; Wall, Bruce

    2010-08-01

    We report on progress to develop and demonstrate CZT and Si hybrid detector arrays for future NASA missions in X-ray and Gamma-ray astronomy. The primary goal for these detectors is consistent with the design concept for the EXIST mission1 and will also be appropriate for other NASA applications and ground-based projects. In particular we target science instruments that have large aperture (multiple square meters) and therefore require a low power ROIC (readout integrated circuits) design (< 10 microwatt per pixel in quiescent mode). The design also must achieve good energy resolution for single photon detection for X rays in the range 5-600 keV with a CZT sense layer and 2-30 keV with a Si sense layer. The target CZT arrays are 2 cm × 2 cm with 600 micron square-shaped pixels. The low power smart pixel detects rare X-ray hits with an adjustable threshold setting. A test array of 7 × 5 pixels with a 5 mm thick CZT sense layer demonstrates that the low power pixel can successfully detect X-rays with {50 readout noise electrons RMS.

  14. CZT detectors with 3D readout for gamma-ray spectroscopy and imaging

    NASA Astrophysics Data System (ADS)

    Matteson, James L.; Pelling, Michael R.; Skelton, Robert T.

    2003-01-01

    We are developing 10 mm thick CZT detectors with 3-D readout for ~100 keV to ~1.5 MeV gamma-rays. Multiple-site gamma-ray interactions are fully measured, i.e., the energy and 3-D position of each site are determined. Spatial resolution is 1 mm FWHM. Anode pixel readout with 1 mm pitch is used for x- and y-positions and charge drift times for z-positions. Drift time measurements are triggered by the cathode signal and end when each interaction site's charge cloud reaches an anode pixel. Post-event processing corrects for signal loss due to charge trapping and accurately determines gamma-ray energies, with a goal of 1% energy resolution at 662 keV. Compton kinematic analysis can identify the initial interaction site in most cases as well as constrain the incident gamma-ray direction. Tests were made with a prototype detector, measuring 10 x 10 x 10 mm3 and operated at 1000 V bias. The measured drift time resolution of 25 nsec FWHM at 662 keV and 60 nsec at 122 keV corresponds to z-position resolution of 0.25 and 0.60 mm FWHM, respectively. The technique is described and results of modeling and tests are presented.

  15. Stoichiometry dependence of the optical and minority-carrier lifetime behaviors of CdTe epitaxial films: A low-temperature and time-resolved photoluminescence study

    NASA Astrophysics Data System (ADS)

    Tang, Kai; Zhu, Xuanting; Zhu, Liangqing; Bai, Wei; Bai, Jiawei; Dong, Wenxia; Yang, Jing; Zhang, Yuanyuan; Chen, Ye; Tang, Xiaodong; Chu, Junhao

    2016-11-01

    Cadmium telluride (CdTe) epitaxial films (EFs) were grown on near-lattice-matched Cd0.96Zn0.04Te (CZT) substrates by molecular beam epitaxy at different ambients to achieve Cd-rich samples with extra Cd molecular flux or Te-rich samples with extra Te molecular flux. The evolution of epitaxial growth was in situ monitored by reflection high-energy electron diffraction (RHEED). A two-dimensional growth mode was indicated by the streaky RHEED patterns. Crystal structures of the CdTe EFs were characterised by X-ray diffraction (XRD). XRD data suggested that the crystal quality of the CdTe EFs was improved by controlling the Cd and Te flux ratio. Low-temperature photoluminescence (PL) spectra were carried out in these CdTe EFs. The typical characteristic peak at ∼1.552 eV denoted as the bound-to-free transition was only found in CdTe samples grown under an extra Cd flux, and Cd vacancy-related defects were absent in the Cd-rich EFs, confirming the Cd-rich or Te-rich states of the epitaxial CdTe films. Finally, minority-carrier lifetime was prolonged in Cd-rich CdTe EFs as supported by time-resolved photoluminescence (TRPL) measurement.

  16. Intelligent Detector Design

    SciTech Connect

    Graf, N.A.; /SLAC

    2012-06-11

    As the complexity and resolution of imaging detectors increases, the need for detailed simulation of the experimental setup also becomes more important. Designing the detectors requires efficient tools to simulate the detector response and reconstruct the events. We have developed efficient and flexible tools for detailed physics and detector response simulation as well as event reconstruction and analysis. The primary goal has been to develop a software toolkit and computing infrastructure to allow physicists from universities and labs to quickly and easily conduct physics analyses and contribute to detector research and development. The application harnesses the full power of the Geant4 toolkit without requiring the end user to have any experience with either Geant4 or C++, thereby allowing the user to concentrate on the physics of the detector system.

  17. Germanium detector vacuum encapsulation

    NASA Technical Reports Server (NTRS)

    Madden, N. W.; Malone, D. F.; Pehl, R. H.; Cork, C. P.; Luke, P. N.; Landis, D. A.; Pollard, M. J.

    1991-01-01

    This paper describes an encapsulation technology that should significantly improve the viability of germanium gamma-ray detectors for a number of important applications. A specialized vacuum chamber has been constructed in which the detector and the encapsulating module are processed in high vacuum. Very high vacuum conductance is achieved within the valveless encapsulating module. The detector module is then sealed without breaking the chamber vacuum. The details of the vacuum chamber, valveless module, processing, and sealing method are presented.

  18. Detectors (4/5)

    ScienceCinema

    None

    2016-07-12

    This lecture will serve as an introduction to particle detectors and detection techniques. In the first lecture, a historic overview of particle detector development will be given. In the second lecture, some basic techniques and concepts for particle detection will be discussed. In the third lecture, the interaction of particles with matter, the basis of particle detection, will be presented. The fourth and fifth lectures will discuss different detector types used for particle tracking, energy measurement and particle identification.

  19. Detectors (5/5)

    ScienceCinema

    None

    2016-07-12

    This lecture will serve as an introduction to particle detectors and detection techniques. In the first lecture, a historic overview of particle detector development will be given. In the second lecture, some basic techniques and concepts for particle detection will be discussed. In the third lecture, the interaction of particles with matter, the basis of particle detection, will be presented. The fourth and fifth lectures will discuss different detector types used for particle tracking, energy measurement and particle identification.

  20. History of infrared detectors

    NASA Astrophysics Data System (ADS)

    Rogalski, A.

    2012-09-01

    This paper overviews the history of infrared detector materials starting with Herschel's experiment with thermometer on February 11th, 1800. Infrared detectors are in general used to detect, image, and measure patterns of the thermal heat radiation which all objects emit. At the beginning, their development was connected with thermal detectors, such as thermocouples and bolometers, which are still used today and which are generally sensitive to all infrared wavelengths and operate at room temperature. The second kind of detectors, called the photon detectors, was mainly developed during the 20th Century to improve sensitivity and response time. These detectors have been extensively developed since the 1940's. Lead sulphide (PbS) was the first practical IR detector with sensitivity to infrared wavelengths up to ˜3 μm. After World War II infrared detector technology development was and continues to be primarily driven by military applications. Discovery of variable band gap HgCdTe ternary alloy by Lawson and co-workers in 1959 opened a new area in IR detector technology and has provided an unprecedented degree of freedom in infrared detector design. Many of these advances were transferred to IR astronomy from Departments of Defence research. Later on civilian applications of infrared technology are frequently called "dual-use technology applications." One should point out the growing utilisation of IR technologies in the civilian sphere based on the use of new materials and technologies, as well as the noticeable price decrease in these high cost technologies. In the last four decades different types of detectors are combined with electronic readouts to make detector focal plane arrays (FPAs). Development in FPA technology has revolutionized infrared imaging. Progress in integrated circuit design and fabrication techniques has resulted in continued rapid growth in the size and performance of these solid state arrays.

  1. Spectroscopic micro-tomography of metallic-organic composites by means of photon-counting detectors

    NASA Astrophysics Data System (ADS)

    Pichotka, M.; Jakubek, J.; Vavrik, D.

    2015-12-01

    The presumed capabilities of photon counting detectors have aroused major expectations in several fields of research. In the field of nuclear imaging ample benefits over standard detectors are to be expected from photon counting devices. First of all a very high contrast, as has by now been verified in numerous experiments. The spectroscopic capabilities of photon counting detectors further allow material decomposition in computed tomography and therefore inherently adequate beam hardening correction. For these reasons measurement setups featuring standard X-ray tubes combined with photon counting detectors constitute a possible replacement of the much more cost intensive tomographic setups at synchrotron light-sources. The actual application of photon counting detectors in radiographic setups in recent years has been impeded by a number of practical issues, above all by restrictions in the detectors size. Currently two tomographic setups in Czech Republic feature photon counting large-area detectors (LAD) fabricated in Prague. The employed large area hybrid pixel-detector assemblies [1] consisting of 10×10/10×5 Timepix devices have a surface area of 143×143 mm2 / 143×71,5 mm2 respectively, suitable for micro-tomographic applications. In the near future LAD devices featuring the Medipix3 readout chip as well as heavy sensors (CdTe, GaAs) will become available. Data analysis is obtained by a number of in house software tools including iterative multi-energy volume reconstruction.In this paper tomographic analysis of of metallic-organic composites is employed to illustrate the capabilities of our technology. Other than successful material decomposition by spectroscopic tomography we present a method to suppress metal artefacts under certain conditions.

  2. Energy response calibration of photon-counting detectors using X-ray fluorescence: a feasibility study

    PubMed Central

    Cho, H-M; Ding, H; Ziemer, BP; Molloi, S

    2014-01-01

    Accurate energy calibration is critical for the application of energy-resolved photon-counting detectors in spectral imaging. The aim of this study is to investigate the feasibility of energy response calibration and characterization of a photon-counting detector using X-ray fluorescence. A comprehensive Monte Carlo simulation study was performed using Geant4 Application for Tomographic Emission (GATE) to investigate the optimal technique for X-ray fluorescence calibration. Simulations were conducted using a 100 kVp tungsten-anode spectra with 2.7 mm Al filter for a single pixel cadmium telluride (CdTe) detector with 3 × 3 mm2 in detection area. The angular dependence of X-ray fluorescence and scatter background was investigated by varying the detection angle from 20° to 170° with respect to the beam direction. The effects of the detector material, shape, and size on the recorded X-ray fluorescence were investigated. The fluorescent material size effect was considered with and without the container for the fluorescent material. In order to provide validation for the simulation result, the angular dependence of X-ray fluorescence from five fluorescent materials was experimentally measured using a spectrometer. Finally, eleven of the fluorescent materials were used for energy calibration of a CZT-based photon-counting detector. The optimal detection angle was determined to be approximately at 120° with respect to the beam direction, which showed the highest fluorescence to scatter ratio (FSR) with a weak dependence on the fluorescent material size. The feasibility of X-ray fluorescence for energy calibration of photon-counting detectors in the diagnostic X-ray energy range was verified by successfully calibrating the energy response of a CZT-based photon-counting detector. The results of this study can be used as a guideline to implement the X-ray fluorescence calibration method for photon-counting detectors in a typical imaging laboratory. PMID:25369288

  3. MicroCT with energy-resolved photon-counting detectors

    PubMed Central

    Wang, X; Meier, D; Mikkelsen, S; Maehlum, G E; Wagenaar, D J; Tsui, BMW; Patt, B E; Frey, E C

    2011-01-01

    The goal of this paper was to investigate the benefits that could be realistically achieved on a microCT imaging system with an energy-resolved photon-counting x-ray detector. To this end, we built and evaluated a prototype microCT system based on such a detector. The detector is based on cadmium telluride (CdTe) radiation sensors and application-specific integrated circuit (ASIC) readouts. Each detector pixel can simultaneously count x-ray photons above six energy thresholds, providing the capability for energy-selective x-ray imaging. We tested the spectroscopic performance of the system using polychromatic x-ray radiation and various filtering materials with Kabsorption edges. Tomographic images were then acquired of a cylindrical PMMA phantom containing holes filled with various materials. Results were also compared with those acquired using an intensity-integrating x-ray detector and single-energy (i.e. non-energy-selective) CT. This paper describes the functionality and performance of the system, and presents preliminary spectroscopic and tomographic results. The spectroscopic experiments showed that the energy-resolved photon-counting detector was capable of measuring energy spectra from polychromatic sources like a standard x-ray tube, and resolving absorption edges present in the energy range used for imaging. However, the spectral quality was degraded by spectral distortions resulting from degrading factors, including finite energy resolution and charge sharing. We developed a simple charge-sharing model to reproduce these distortions. The tomographic experiments showed that the availability of multiple energy thresholds in the photon-counting detector allowed us to simultaneously measure target-to-background contrasts in different energy ranges. Compared with single-energy CT with an integrating detector, this feature was especially useful to improve differentiation of materials with different attenuation coefficient energy dependences. PMID:21464527

  4. Energy response calibration of photon-counting detectors using x-ray fluorescence: a feasibility study.

    PubMed

    Cho, H-M; Ding, H; Ziemer, B P; Molloi, S

    2014-12-01

    Accurate energy calibration is critical for the application of energy-resolved photon-counting detectors in spectral imaging. The aim of this study is to investigate the feasibility of energy response calibration and characterization of a photon-counting detector using x-ray fluorescence. A comprehensive Monte Carlo simulation study was performed using Geant4 Application for Tomographic Emission (GATE) to investigate the optimal technique for x-ray fluorescence calibration. Simulations were conducted using a 100 kVp tungsten-anode spectra with 2.7 mm Al filter for a single pixel cadmium telluride (CdTe) detector with 3 × 3 mm(2) in detection area. The angular dependence of x-ray fluorescence and scatter background was investigated by varying the detection angle from 20° to 170° with respect to the beam direction. The effects of the detector material, shape, and size on the recorded x-ray fluorescence were investigated. The fluorescent material size effect was considered with and without the container for the fluorescent material. In order to provide validation for the simulation result, the angular dependence of x-ray fluorescence from five fluorescent materials was experimentally measured using a spectrometer. Finally, eleven of the fluorescent materials were used for energy calibration of a CZT-based photon-counting detector. The optimal detection angle was determined to be approximately at 120° with respect to the beam direction, which showed the highest fluorescence to scatter ratio (FSR) with a weak dependence on the fluorescent material size. The feasibility of x-ray fluorescence for energy calibration of photon-counting detectors in the diagnostic x-ray energy range was verified by successfully calibrating the energy response of a CZT-based photon-counting detector. The results of this study can be used as a guideline to implement the x-ray fluorescence calibration method for photon-counting detectors in a typical imaging laboratory.

  5. Adaptors for radiation detectors

    DOEpatents

    Livesay, Ronald Jason

    2015-07-28

    Described herein are adaptors and other devices for radiation detectors that can be used to make accurate spectral measurements of both small and large bulk sources of radioactivity, such as building structures, soils, vessels, large equipment, and liquid bodies. Some exemplary devices comprise an adaptor for a radiation detector, wherein the adaptor can be configured to collimate radiation passing through the adapter from an external radiation source to the radiation detector and the adaptor can be configured to enclose a radiation source within the adapter to allow the radiation detector to measure radiation emitted from the enclosed radiation source.

  6. Adaptors for radiation detectors

    DOEpatents

    Livesay, Ronald Jason

    2014-04-22

    Described herein are adaptors and other devices for radiation detectors that can be used to make accurate spectral measurements of both small and large bulk sources of radioactivity, such as building structures, soils, vessels, large equipment, and liquid bodies. Some exemplary devices comprise an adaptor for a radiation detector, wherein the adaptor can be configured to collimate radiation passing through the adapter from an external radiation source to the radiation detector and the adaptor can be configured to enclose a radiation source within the adapter to allow the radiation detector to measure radiation emitted from the enclosed radiation source.

  7. The CDFII Silicon Detector

    SciTech Connect

    Julia Thom

    2004-07-23

    The CDFII silicon detector consists of 8 layers of double-sided silicon micro-strip sensors totaling 722,432 readout channels, making it one of the largest silicon detectors in present use by an HEP experiment. After two years of data taking, we report on our experience operating the complex device. The performance of the CDFII silicon detector is presented and its impact on physics analyses is discussed. We have already observed measurable effects from radiation damage. These results and their impact on the expected lifetime of the detector are briefly reviewed.

  8. Overcoming degradation mechanisms in CdTe solar cells: First annual report, August 1998--August 1999

    SciTech Connect

    Cahen, D.; Gartsman, K.; Hodes, G.; Rotlevy, O.; Visoly-Fisher, I,; Dobson, K.

    2000-02-28

    The authors have studied the importance of chemical processes for the stability of CdTe solar cells, in particular, diffusion in the ohmic contact/absorber junction regions. Both whole cells and test systems containing only the ohmic contact and the absorber are used. They found several experimental methods to be useable tools to follow the effects of impurity diffusion on the CdTe grain boundaries, grain bulk, and surface. In addition, they have explored alternative contacting schemes. The first year of activities led to the following tentative conclusions: Grain boundaries in CdTe/CdS cells are NOT fully passivated and are expected to be electrically active; There appears to be fast ionic diffusion in the vicinity of the Cu/HgTe/graphite back-contact, possibly enhanced by grain boundary diffusion; The macroscopic response to stress is different for cells with identical back-contact, but from different manufacturers. Different factors and/or different reactions to identical factors are possibly at work here; and Ni-P appears to be a promising back-contact material.

  9. Visualization of hormone binding proteins in vivo based on Mn-doped CdTe QDs

    NASA Astrophysics Data System (ADS)

    Liu, Fang fei; Yu, Ying; Lin, Bi xia; Hu, Xiao gang; Cao, Yu juan; Wu, Jian zhong

    2014-10-01

    Daminozide (B9) is a growth inhibitor with important regulatory roles in plant growth and development. Locating and quantifying B9-binding proteins in plant tissues will assist in investigating the mechanism behind the signal transduction of B9. In this study, red fluorescent Mn-doped CdTe quantum dots (CdTeMn QDs) were synthesized by a high-temperature hydrothermal process. Since CdTeMn QDs possess a maximum fluorescence emission peak at 610 nm, their fluorescence properties are more stable than those of CdTe QDs. A B9-CdTeMn probe was synthesized by coupling B9 with CdTeMn QDs. The fluorescence intensity of the probe is double that of CdTeMn QDs; its fluorescence stability is also superior under different ambient conditions. The probe retains the biological activity of B9 and is unaffected by interference from the green fluorescent protein present in plants. Therefore, we used this probe to label B9-binding proteins selectively in root tissue sections of mung bean seedlings. These proteins were observed predominantly on the surfaces of the cell membranes of the cortex and epidermal parenchyma.

  10. Nanoscale imaging of photocurrent and efficiency in CdTe solar cells.

    PubMed

    Leite, Marina S; Abashin, Maxim; Lezec, Henri J; Gianfrancesco, Anthony; Talin, A Alec; Zhitenev, Nikolai B

    2014-11-25

    The local collection characteristics of grain interiors and grain boundaries in thin-film CdTe polycrystalline solar cells are investigated using scanning photocurrent microscopy. The carriers are locally generated by light injected through a small aperture (50-300 nm) of a near-field scanning optical microscope in an illumination mode. Possible influence of rough surface topography on light coupling is examined and eliminated by sculpting smooth wedges on the granular CdTe surface. By varying the wavelength of light, nanoscale spatial variations in external quantum efficiency are mapped. We find that the grain boundaries (GBs) are better current collectors than the grain interiors (GIs). The increased collection efficiency is caused by two distinct effects associated with the material composition of GBs. First, GBs are charged, and the corresponding built-in field facilitates the separation and the extraction of the photogenerated carriers. Second, the GB regions generate more photocurrent at long wavelength corresponding to the band edge, which can be caused by a smaller local band gap. Resolving carrier collection with nanoscale resolution in solar cell materials is crucial for optimizing the polycrystalline device performance through appropriate thermal processing and passivation of defects and surfaces.

  11. Measurement and analysis of non-uniformities in CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Sites, James R.

    2011-09-01

    CdTe and other thin-film polycrystalline solar cells have potential spatial non-uniformities in their photovoltaic response that can both lower their performance and complicate the analysis of their current-voltage curves. Polycrystalline cells have inherent non-uniformities associated with their grain structure, but there are a variety of other possibilities including thickness variations, local shunts, and weak-diode areas. Additionally, there are possible issues associated with the fabrication process due to cleaning residues, scratches, thermal variations, and particulate inclusions. The primary measurements described here to map the non-uniformities of CdTe cells are light-beam-induced current (LBIC), which gives a direct measure of the local PV response, and electroluminescence (EL), which is the inverse of the PV effect. The former is attractive, because it can be used to deduce the local current-voltage curve, but data collection is time consuming. The latter though the use of modern CCD cameras takes only a few seconds and is compatible with production-line screening.

  12. Advances in all-sputtered CdTe solar cells on flexible substrates

    NASA Astrophysics Data System (ADS)

    Wieland, Kristopher; Mahabaduge, Hasitha; Vasko, Anthony; Compaan, Alvin

    2010-03-01

    The University of Toledo II-VI semiconductor group has developed magnetron sputtering (MS) for the deposition of thin films of CdS, CdTe, and related materials for photovoltaic applications. On glass superstrates, we have reached air mass 1.5 efficiencies of 14%.[1] Recently we have studied the use of MS for the fabrication of thin-film CdS/CdTe cells on flexible polyimide superstrates. This takes advantage of the high film quality that can be achieved at substrate temperatures below 300 C when RF MS is used. Our recent CdS/CdTe solar cells have reached 10.5% on flexible polyimide substrates. [2] This all-sputtered cell (except for back contact) has a structure of polyimide/ZnO:Al/ZnO/CdS/CdTe/Cu/Au. The physics of this device will be discussed through the use of spectral quantum efficiency and current-voltage measurements as a function of CdTe layer thickness. Pathways toward further increases in device efficiencies will also be discussed. [1] Appl. Phys. Lett. 85, 684 (2004) [2] Phys. Stat. Sol. (B) 241, No. 3, 779--782 (2004)

  13. DX centers and persistent photoconductivity in CdTe In films

    NASA Astrophysics Data System (ADS)

    Rivera-Alvarez, Z.; Hernández, L.; Becerril, M.; Picos-Vega, A.; Zelaya-Angel, O.; Ramírez-Bon, R.; Vargas-García, J. R.

    2000-02-01

    In this work, we study the nature and behavior of the persistent photoconductivity (PPC) in CdTe-In films grown by co-sputtering of CdTe-In-Cd targets. It was found that only when In atoms are substantially incorporated into CdTe films, the persistent photoconductivity is observed with a quenching temperature of about 270 K. We have also investigated the trapping centers in the CdTe films by using the thermally stimulated conductivity technique. Two localized deep levels were determined. One of them, with an activation energy of 0.42 eV, has been ascribed as a direct evidence of DX centers that are formed by Cd vacancies and In donors complexes. By formulating the PPC build-up and decay kinetics, we have associated the PPC effect in our films to the photoionization of this deep level (DX like centers). Up to date, the existence of DX centers in CdTe-In polycrystalline films have not been previously reported.

  14. Photoluminescenceof magnetron sputtered CdTe films: dependence on target purity, substrate, and annealing conditions

    NASA Astrophysics Data System (ADS)

    Hinko, Kathleen

    2002-03-01

    We have altered several parameters relating to the CdTe layer in CdTe-based solar cells and have analyzed the effects of these changes on low-temperature photoluminescence (PL). Polycrystalline CdTe films were grown by radio frequency magnetron sputtering from two targets purchased from commercial vendors and one pressed at the University of Toledo (UT). We observed substantial differences related to the targets and to the soda lime and borosilicate glass substrates. Parts of each film were annealed at 387 C and 400 C in the presence of CdCl2. The intensity and the spectrum of the PL suggest that films grown from the homemade UT target were of comparable quality to those grown from the commercial target. We found much weaker PL for films grown on borosilicate glass than for soda-lime glass. This may indicate that sodium from the soda-lime glass may leach into the films producing a shallow donor and enhancing the donor-acceptor pair luminescence. Work supported by NREL and NSF.

  15. Crystal structure and energy gap of CdTe thin films grown by radio frequency sputtering

    NASA Astrophysics Data System (ADS)

    Jiménez-Sandoval, S.; Meléndez-Lira, M.; Hernández-Calderón, I.

    1992-11-01

    We have investigated the influence of structural characteristics on the band gap of rf sputtered CdTe thin films grown at substrate temperatures in the 69-232 °C range. The results of scanning electron microscopy and x-ray diffraction studies indicated that the films are a polycrystalline mixture of cubic and hexagonal phases with preferential growth of columnar type parallel to the cubic [111] direction. The band gap of the films was obtained from photoreflectance spectroscopy experiments carried out at room temperature. It was found that the films had a band gap larger than that of CdTe single crystals. This result has been correlated with the existence of lattice strain, quantum size effects, and hexagonal phase regions. By using theoretical models it was possible to estimate the contribution to the band gap shift due to strain and quantum size effects obtaining results in good agreement with the experiment. The study of annealed samples indicated that the effects of thermal treatments were to promote the change of the hexagonal phase to cubic, increase grain size, and shift the band gap towards lower energies reducing its difference with respect to that of single crystals.

  16. Application of mercaptosuccinic acid capped CdTe quantum dots for latent fingermark development.

    PubMed

    Yu, Xuejiao; Liu, Jianjun; Zuo, Shengli; Yu, Yingchun; Cai, Kaiyang; Yang, Ruiqin

    2013-09-10

    The aqueous synthesis of mercaptosuccinic acid (MSA) capped CdTe quantum dots (QDs) solution for quickly and sensitively developing latent fingermarks is described. The rapid growth mechanism of CdTe/MSA QDs, which depends on the molecule structure of MSA, is briefly discussed and compared with that of thioglycolic acid (TGA) and mercaptopropionic acid (MPA) capped CdTe QDs. Development of latent fingermarks with the synthesized CdTe/MSA QDs was faster and the ridge details were clearer compared with CdTe/TGA QDs. In addition, latent fingermarks developed with CdTe/MSA QDs showed less background and better contrast than that of gentian violet or rhodamine 6G. Latent fingermarks could be well developed on black tape, scotch tape, tinfoil, aluminum alloy, stainless steel as well as on the adhesive side of yellow tape, even when the latter were aged up to seven days. As immersion time greatly reduced to 10 s by using CdTe/MSA QDs, a preliminary result of latent fingermark development by spraying was presented also.

  17. Studying nanotoxic effects of CdTe quantum dots in Trypanosoma cruzi

    NASA Astrophysics Data System (ADS)

    Stahl, C. V.; Almeida, D. B.; de Thomaz, A. A.; Fontes, A.; Menna-Barreto, R. F. S.; Santos-Mallet, J. R.; Cesar, C. L.; Gomes, S. A. O.; Feder, D.

    2010-02-01

    Many studies have been done in order to verify the possible nanotoxicity of quantum dots in some cellular types. Protozoan pathogens as Trypanosoma cruzi, etiologic agent of Chagas1 disease is transmitted to humans either by blood-sucking triatomine vectors, blood transfusion, organs transplantation or congenital transmission. The study of the life cycle, biochemical, genetics, morphology and others aspects of the T. cruzi is very important to better understand the interactions with its hosts and the disease evolution on humans. Quantum dot, nanocrystals, highly luminescent has been used as tool for experiments in in vitro and in vivo T. cruzi life cycle development in real time. We are now investigating the quantum dots toxicity on T. cruzi parasite cells using analytical methods. In vitro experiments were been done in order to test the interference of this nanoparticle on parasite development, morphology and viability (live-death). Ours previous results demonstrated that 72 hours after parasite incubation with 200 μM of CdTe altered the development of T. cruzi and induced cell death by necrosis in a rate of 34%. QDs labeling did not effect: (i) on parasite integrity, at least until 7 days; (ii) parasite cell dividing and (iii) parasite motility at a concentration of 2 μM CdTe. This fact confirms the low level of cytotoxicity of these QDs on this parasite cell. In summary our results is showing T. cruzi QDs labeling could be used for in vivo cellular studies in Chagas disease.

  18. Nanoscale imaging of photocurrent and efficiency in CdTe solar cells

    SciTech Connect

    Leite, Marina S.; Abashin, Maxim; Lezec, Henri J.; Gianfrancesco, Anthony; Talin, A. Alec; Zhitenev, Nikolai B.

    2014-10-15

    The local collection characteristics of grain interiors and grain boundaries in thin film CdTe polycrystalline solar cells are investigated using scanning photocurrent microscopy. The carriers are locally generated by light injected through a small aperture (50-300 nm) of a near-field scanning optical microscope in an illumination mode. Possible influence of rough surface topography on light coupling is examined and eliminated by sculpting smooth wedges on the granular CdTe surface. By varying the wavelength of light, nanoscale spatial variations in external quantum efficiency are mapped. We find that the grain boundaries (GBs) are better current collectors than the grain interiors (GIs). The increased collection efficiency is caused by two distinct effects associated with the material composition of GBs. First, GBs are charged, and the corresponding built-in field facilitates the separation and the extraction of the photogenerated carriers. Second, the GB regions generate more photocurrent at long wavelength corresponding to the band edge, which can be caused by a smaller local band gap. As a result, resolving carrier collection with nanoscale resolution in solar cell materials is crucial for optimizing the polycrystalline device performance through appropriate thermal processing and passivation of defect and surfaces.

  19. Innovative sputtering techniques for CIS and CdTe submodule fabrication

    SciTech Connect

    Armstrong, J.M.; Misra, M.S.; Lanning, B. . Astronautics Group)

    1993-03-01

    This report describes work done during Phase 1 of the subject subcontract. The subcontract was designed to study innovative deposition techniques, such as the rotating cylindrical magnetron sputtering system and electrodeposition for large-area, low-cost copper indium diselenide (CIS) and cadmium telluride (CdTe) devices. A key issue for photovoltaics (PV) in terrestrial and future space applications is producibility, particularly for applications using a large quantity of PV. Among the concerns for fabrication of polycrystalline thin-film PV, such as CIS and CdTe, are production volume, cost, and minimization of waste. Both rotating cylindrical magnetron (C-Mag[trademark]) sputtering and electrodeposition have tremendous potential for the fabrication of polycrystalline thin-film PV due to scaleability, efficient utilization of source materials, and inherently higher deposition rates. In the case of sputtering, the unique geometry of the C-Mae facilitates innovative cosputtering and reactive sputtering that could lead to greater throughput reduced health and safety risks, and, ultimately, lower fabrication cost. Electrodeposited films appear to be adherent and comparable with low-cost fabrication techniques. Phase I involved the initial film and device fabrication using the two techniques mentioned herein. Devices were tested by both internal facilities, as well as NREL and ISET.

  20. Innovative sputtering techniques for CIS and CdTe submodule fabrication

    NASA Astrophysics Data System (ADS)

    Armstrong, J. M.; Misra, M. S.; Lanning, B.

    1993-03-01

    This report describes work done during Phase 1 of the subject subcontract. The subcontract was designed to study innovative deposition techniques, such as the rotating cylindrical magnetron sputtering system and electrodeposition for large-area, low-cost copper indium diselenide (CIS) and cadmium telluride (CdTe) devices. A key issue for photovoltaics (PV) in terrestrial and future space applications is producibility, particularly for applications using a large quantity of PV. Among the concerns for fabrication of polycrystalline thin-film PV, such as CIS and CdTe, are production volume, cost, and minimization of waste. Both rotating cylindrical magnetron (C-Mag(trademark)) sputtering and electrodeposition have tremendous potential for the fabrication of polycrystalline thin-film PV due to scaleability, efficient utilization of source materials, and inherently higher deposition rates. In the case of sputtering, the unique geometry of the C-Mag facilitates innovative cosputtering and reactive sputtering that could lead to greater throughput reduced health and safety risks, and, ultimately, lower fabrication cost. Electrodeposited films appear to be adherent and comparable with low-cost fabrication techniques. Phase 1 involved the initial film and device fabrication using the two techniques mentioned herein. Devices were tested by both internal facilities, as well as NREL and ISET.

  1. Self-passivation rule and structure of CdTe Σ3 (112) grain boundaries

    NASA Astrophysics Data System (ADS)

    Liu, Cheng-yan; Zhang, Yue-yu; Hou, Yu-sheng; Chen, Shi-you; Xiang, Hong-jun; Gong, Xin-gao

    2016-05-01

    The theoretical study of grain boundaries (GBs) in polycrystalline semiconductors is currently stalemated by their complicated nature, which is difficult to extract from any direct experimental characterization. Usually, coincidence-site-lattice models are constructed simply by aligning two symmetric planes ignoring various possible reconstructions. Here, we propose a general self-passivation rule to determine the low-energy GB reconstruction and find new configurations for the CdTe Σ3 (112) GBs. First-principles calculations show that it has lower formation energies than the prototype GBs adopted widely in previous studies. Surprisingly, the reconstructed GBs show self-passivated electronic properties without deep-level states in the band gap. Based on the reconstructed configurations, we revisited the influence of CdC l2 post-treatment on the CdTe GBs and found that the addition of both Cd and Cl atoms in the GB improves the photovoltaic properties by promoting self-passivation and inducing n -type levels, respectively. The present study provides a new route for further studies of GBs in covalent polycrystalline semiconductors and highlights that previous studies on the GBs of multinary semiconductors, which are based on the unreconstructed prototype GB models, should be revisited.

  2. Charge-carrier transport and recombination in heteroepitaxial CdTe

    SciTech Connect

    Kuciauskas, Darius Farrell, Stuart; Dippo, Pat; Moseley, John; Moutinho, Helio; Li, Jian V.; Allende Motz, A. M.; Kanevce, Ana; Zaunbrecher, Katherine; Gessert, Timothy A.; Levi, Dean H.; Metzger, Wyatt K.; Colegrove, Eric; Sivananthan, S.

    2014-09-28

    We analyze charge-carrier dynamics using time-resolved spectroscopy and varying epitaxial CdTe thickness in undoped heteroepitaxial CdTe/ZnTe/Si. By employing one-photon and nonlinear two-photon excitation, we assess surface, interface, and bulk recombination. Two-photon excitation with a focused laser beam enables characterization of recombination velocity at the buried epilayer/substrate interface, 17.5 μm from the sample surface. Measurements with a focused two-photon excitation beam also indicate a fast diffusion component, from which we estimate an electron mobility of 650 cm² (Vs)⁻¹ and diffusion coefficient D of 17 cm² s⁻¹. We find limiting recombination at the epitaxial film surface (surface recombination velocity Ssurface = (2.8 ± 0.3) × 10⁵cm s ⁻¹) and at the heteroepitaxial interface (interface recombination velocity Sinterface = (4.8 ± 0.5) × 10⁵ cm s⁻¹). The results demonstrate that reducing surface and interface recombination velocity is critical for photovoltaic solar cells and electronic devices that employ epitaxial CdTe.

  3. Detection of electron emission as DLTS signal in CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Ding, Y. M.; Cheng, Z.; Tan, X.; Misra, D.; Delahoy, A. E.; Chin, K. K.

    2016-10-01

    This work identifies an incongruity in the detection of the minority carrier signal in CdTe solar cells during the deep level transient spectroscopy (DLTS) measurement. Use of quasi-Fermi level instead of Fermi level of majority carriers to estimate the probability of emitting carriers seems to correct the ambiguity. During the experiment, signals from minority carrier traps (electron traps) were detected by using a long filling pulse time instead of an electron injection pulse. The DLTS measurements of CdTe solar cells observed a single electron trap with energy level EE1 = 0.47 eV, and two hole traps with energy levels, EH1 = 0.17 eV and EH2 = 0.27 eV. The possibility of any impact from the back contact was excluded, and the phenomenon was clarified by the simulation. It was further observed that when the condition of quasi-Fermi level is considered, the results of calculated probability were significantly different from that of the results that used only Fermi level of majority carriers. The simulations further aided the explanation of the defect behavior in DLTS measurements and the overlapping phenomenon of the capacitance spectrum of hole and electron traps.

  4. Nanoscale imaging of photocurrent and efficiency in CdTe solar cells

    DOE PAGES

    Leite, Marina S.; National Inst. of Standards and Technology; Abashin, Maxim; National Inst. of Standards and Technology; Lezec, Henri J.; Gianfrancesco, Anthony; Talin, A. Alec; Sandia National Lab.; Zhitenev, Nikolai B.

    2014-10-15

    The local collection characteristics of grain interiors and grain boundaries in thin film CdTe polycrystalline solar cells are investigated using scanning photocurrent microscopy. The carriers are locally generated by light injected through a small aperture (50-300 nm) of a near-field scanning optical microscope in an illumination mode. Possible influence of rough surface topography on light coupling is examined and eliminated by sculpting smooth wedges on the granular CdTe surface. By varying the wavelength of light, nanoscale spatial variations in external quantum efficiency are mapped. We find that the grain boundaries (GBs) are better current collectors than the grain interiors (GIs).more » The increased collection efficiency is caused by two distinct effects associated with the material composition of GBs. First, GBs are charged, and the corresponding built-in field facilitates the separation and the extraction of the photogenerated carriers. Second, the GB regions generate more photocurrent at long wavelength corresponding to the band edge, which can be caused by a smaller local band gap. As a result, resolving carrier collection with nanoscale resolution in solar cell materials is crucial for optimizing the polycrystalline device performance through appropriate thermal processing and passivation of defect and surfaces.« less

  5. Determination of 2-methoxyestradiol by chemiluminescence based on luminol-KMnO4-CdTe quantum dots system

    NASA Astrophysics Data System (ADS)

    Du, Bin; Wang, Tiantian; Han, Shuping; Cao, Xiaohui; Qu, Tiantian; Zhao, Feifei; Guo, Xinhong; Yao, Hanchun

    2015-02-01

    In this study, water-soluble CdTe quantum-dots (QDs) capped with glutathione (GSH) was synthesized. It was found that CdTe QDs could greatly enhance the chemiluminescence (CL) emission from the luminol-KMnO4 system in alkaline medium, and 4 nm CdTe QDs was used as catalysts to enhance the reaction sensitivity. The CL intensity of CdTe QDs-luminol-KMnO4 was strongly inhibited in the presence of 2-methoxyestradiol (2-ME) and the relative CL intensity was in linear correlation with the concentration of 2-ME. Based on this inhibition, a novel CL method with a lower detection limit and wider linear range was developed for the determination of 2-ME. The detection limit of plasma samples was 3.07 × 10-10 g mL-1 with a relative standard deviation of 0.24% for 8.0 × 10-9 g mL-1 2-ME. The method was successfully applied for determination of 2-ME in plasma samples. The possible CL reaction mechanism was also discussed briefly.

  6. Photo-induced interaction of thioglycolic acid (TGA)-capped CdTe quantum dots with cyanine dyes

    NASA Astrophysics Data System (ADS)

    Abdelbar, Mostafa F.; Fayed, Tarek A.; Meaz, Talaat M.; Ebeid, El-Zeiny M.

    2016-11-01

    The photo-induced interaction of three different sizes of thioglycolic acid (TGA)-capped CdTe quantum dots (CdTe QDs) with two monomethine cyanine dyes belonging to the thiazole orange (TO) family has been studied. Positively charged cyanines interact with QDs surface which is negatively charged due to capping agent carboxylate ions. The energy transfer parameters including Stern-Volmer constant, Ksv, number of binding sites, n, quenching sphere radius, r, the critical energy transfer distance, R0, and energy transfer efficiencies, E have been calculated. The effect of structure and the number of aggregating molecules have been studied as a function of CdTe QDs particle size. Combining organic and inorganic semiconductors leads to increase of the effective absorption cross section of the QDs which can be utilized in novel nanoscale designs for light-emitting, photovoltaic and sensor applications. A synthesized triplet emission of the studied dyes was observed using CdTe QDs as donors and this is expected to play a potential role in molecular oxygen sensitization and in photodynamic therapy (PDT) applications.

  7. Enhanced electrical properties at boundaries including twin boundaries of polycrystalline CdTe thin-film solar cells.

    PubMed

    Li, H; Liu, X X; Lin, Y S; Yang, B; Du, Z M

    2015-05-01

    The effect of grain boundaries (GBs), in particular twin boundaries (TBs), on CdTe polycrystalline thin films is studied by conductive atomic force microscopy (C-AFM), electron-beam-induced current (EBIC), scanning Kelvin probe microscopy (SKPM), electron backscatter diffraction (EBSD), and scanning transmission electron microscopy (STEM). Four types of CdTe grains with various densities of {111} Σ3 twin boundaries (TBs) are found in Cl-treated CdTe polycrystalline thin films: (1) grains having multiple {111} Σ3 TBs with a low angle to the film surface; (2) grains having multiple {111} Σ3 TBs parallel to the film surfaces; (3) small grains on a scale of not more than 500 nm, composed of Cd, Cl, Te, and O; and (4) CdTe grains with not more than two {111} Σ3 TBs. Grain boundaries (including TBs) exhibit enhanced current transport phenomena. However, the {111} Σ3 TB is much more beneficial to micro-current transport. The enhanced current transport can be explained by the lower electron potential at GBs (including TBs) than the grain interiors (GIs). Our results open new opportunities for enhancing solar cell performances by controlling the grain boundaries, and in particular TBs.

  8. Monocrystalline CdTe solar cells with open-circuit voltage over 1 V and efficiency of 17%

    NASA Astrophysics Data System (ADS)

    Zhao, Yuan; Boccard, Mathieu; Liu, Shi; Becker, Jacob; Zhao, Xin-Hao; Campbell, Calli M.; Suarez, Ernesto; Lassise, Maxwell B.; Holman, Zachary; Zhang, Yong-Hang

    2016-06-01

    The open-circuit voltages of mature single-junction photovoltaic devices are lower than the bandgap energy of the absorber, typically by a gap of 400 mV. For CdTe, which has a bandgap of 1.5 eV, the gap is larger; for polycrystalline samples, the open-circuit voltage of solar cells with the record efficiency is below 900 mV, whereas for monocrystalline samples it has only recently achieved values barely above 1 V. Here, we report a monocrystalline CdTe/MgCdTe double-heterostructure solar cell with open-circuit voltages of up to 1.096 V. The latticed-matched MgCdTe barrier layers provide excellent passivation to the CdTe absorber, resulting in a carrier lifetime of 3.6 μs. The solar cells are made of 1- to 1.5-μm-thick n-type CdTe absorbers, and passivated hole-selective p-type a-SiCy:H contacts. This design allows CdTe solar cells to be made thinner and more efficient. The best power conversion efficiency achieved in a device with this structure is 17.0%.

  9. Cu-doped CdS and its application in CdTe thin film solar cell

    NASA Astrophysics Data System (ADS)

    Deng, Yi; Yang, Jun; Yang, Ruilong; Shen, Kai; Wang, Dezhao; Wang, Deliang

    2016-01-01

    Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd- and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  10. Optical phonon frequencies in the quaternary CdTe1-x-ySexSy mixed system

    NASA Astrophysics Data System (ADS)

    Gupta, H. C.; Sood, Geeta; Malhotra, Jaishree; Tripathi, B. B.

    1986-08-01

    The optical phonon frequencies of the mixed-crystal system CdTe1-x-ySexSy are calculated theoretically by means of a concentration-dependent model utilizing the effect of nonrandomness. The calculations are in satisfactory agreement with the experimental results.

  11. Evidence of Quantum Resonance in Periodically-Ordered Three-Dimensional Superlattice of CdTe Quantum Dots.

    PubMed

    Kim, DaeGwi; Tomita, Shougo; Ohshiro, Kazuma; Watanabe, Taichi; Sakai, Takenobu; Chang, I-Ya; Hyeon-Deuk, Kim

    2015-07-01

    Semiconductor quantum dot (QD) superlattices, which are periodically ordered three-dimensional (3D) array structures of QDs, are expected to exhibit novel photo-optical properties arising from the resonant interactions between adjacent QDs. Since the resonant interactions such as long-range dipole-dipole Coulomb coupling and short-range quantum resonance strongly depend on inter-QD nano space, precise control of the nano space is essential for physical understanding of the superlattice, which includes both of nano and bulk scales. Here, we study the pure quantum resonance in the 3D CdTe QD superlattice deposited by a layer-by-layer assembly of positively charged polyelectrolytes and negatively charged CdTe QDs. From XRD measurements, existence of the periodical ordering of QDs both in the lamination and in-plane directions, that is, the formation of the 3D periodic QD superlattice, was confirmed. The lowest excitation energy decreases exponentially with decreasing the nano space between the CdTe QD layers and also with decreasing the QD size, which is apparently indicative of the quantum resonance between the QDs rather than a dipole-dipole Coulomb coupling. The quantum resonance was also computationally demonstrated and rationalized by the orbital delocalization to neighboring CdTe QDs in the superlattice.

  12. Optimum design of multi-layer K-edge filter and multi-stage detectors for triple energy bone densitometer

    NASA Astrophysics Data System (ADS)

    Mazoochi, Alireza; Rahmani, Faezeh; Abbasi Davani, Fereydoun; Ghaderi, Ruhollah

    2014-03-01

    Dual X-ray bone densitometry may cause some errors in diagnosis due to heterogeneous distribution of adipose tissue. It is necessary to develop a more accurate technique to consider the effects of fat. In this research, a triple energy X-ray method has been introduced and conceptual design of a system consisting of 160 kV X-ray tube, multi-layer K-edge filter and multi-stage detector has been presented. Design calculations have been performed using MCNP4C Monte Carlo code to select the type of filters and detectors with the best thicknesses for better distinguishing materials. The energy peaks (37 keV, 50 keV and 105 keV) can be separated optimally with a multi-layer filter composed of barium (170 μm) and gadolinium (100 μm) as the first and second layers, respectively which are coated on a 1 mm aluminum plate placed between the source and tissue. The transmitted photons have been counted by a multi-stage linear array of detectors consisting of ZnSe(Te) and CsI(Tl) with 400 μm and 5 mm thicknesses, respectively. Monte Carlo simulations show that the triple energy X-ray technique has better accuracy than that of the standard dual energy X-ray technique.

  13. A new method of testing space-based high-energy electron detectors with radioactive electron sources

    NASA Astrophysics Data System (ADS)

    Zhang, S. Y.; Shen, G. H.; Sun, Y.; Zhou, D. Z.; Zhang, X. X.; Li, J. W.; Huang, C.; Zhang, X. G.; Dong, Y. J.; Zhang, W. J.; Zhang, B. Q.; Shi, C. Y.

    2016-05-01

    Space-based electron detectors are commonly tested using radioactive β-sources which emit a continuous spectrum without spectral lines. Therefore, the tests are often to be considered only qualitative. This paper introduces a method, which results in more than a qualitative test even when using a β-source. The basic idea is to use the simulated response function of the instrument to invert the measured spectrum and compare this inverted spectrum with a reference spectrum obtained from the same source. Here we have used Geant4 to simulate the instrument response function (IRF) and a 3.5 mm thick Li-drifted Si detector to obtain the reference 90Sr/90Yi source spectrum to test and verify the geometric factors of the Omni-Direction Particle Detector (ODPD) on the Tiangong-1 (TG-1) and Tiangong-2 (TG-2) spacecraft. The TG spacecraft are experimental space laboratories and prototypes of the Chinese space station. The excellent agreement between the measured and reference spectra demonstrates that this test method can be used to quantitatively assess the quality of the instrument. Due to its simplicity, the method is faster and therefore more efficient than traditional full calibrations using an electron accelerator.

  14. Improving the spatial resolution in CZT detectors using charge sharing effect and transient signal analysis: Simulation study

    NASA Astrophysics Data System (ADS)

    Zheng, Xiaoqing; Cheng, Zeng; Deen, M. Jamal; Peng, Hao

    2016-02-01

    Cadmium Zinc Telluride (CZT) semiconductor detectors are capable of providing superior energy resolution and three-dimensional position information of gamma ray interactions in a large variety of fields, including nuclear physics, gamma-ray imaging and nuclear medicine. Some dedicated Positron Emission Tomography (PET) systems, for example, for breast cancer detection, require higher contrast recovery and more accurate event location compared with a whole-body PET system. The spatial resolution is currently limited by electrode pitch in CZT detectors. A straightforward approach to increase the spatial resolution is by decreasing the detector electrode pitch, but this leads to higher fabrication cost and a larger number of readout channels. In addition, inter-electrode charge spreading can negate any improvement in spatial resolution. In this work, we studied the feasibility of achieving sub-pitch spatial resolution in CZT detectors using two methods: charge sharing effect and transient signal analysis. We noted that their valid ranges of usage were complementary. The dependences of their corresponding valid ranges on electrode design, depth-of-interaction (DOI), voltage bias and signal triggering threshold were investigated. The implementation of these two methods in both pixelated and cross-strip configuration of CZT detectors were discussed. Our results show that the valid range of charge sharing effect increases as a function of DOI, but decreases with increasing gap width and bias voltage. For a CZT detector of 5 mm thickness, 100 μm gap and biased at 400 V, the valid range of charge sharing effect was found to be about 112.3 μm around the gap center. This result complements the valid range of the transient signal analysis within one electrode pitch. For a signal-to-noise ratio (SNR) of ~17 and preliminary measurements, the sub-pitch spatial resolution is expected to be ~30 μm and ~250 μm for the charge sharing and transient signal analysis methods

  15. SCINTILLATION EXPOSURE RATE DETECTOR

    DOEpatents

    Spears, W.G.

    1960-11-01

    A radiation detector for gamma and x rays is described. The detector comprises a scintillation crystal disposed between a tantalum shield and the input of a photomultiplier tube, the crystal and the shield cooperating so that their combined response to a given quantity of radiation at various energy levels is substantially constant.

  16. Smoke Detectors and Legislation.

    ERIC Educational Resources Information Center

    National Fire Prevention and Control Administration (DOC), Washington, DC.

    This manual, one of a series for use in public education, provides an in-depth review of the current status of state and local smoke detector legislation. First, for the community considering a smoke detector law or ordinance, six decision points are discussed: which residential occupancy sub-classes will be affected; what the time factors are for…

  17. Alkali ionization detector

    DOEpatents

    Hrizo, John; Bauerle, James E.; Witkowski, Robert E.

    1982-01-01

    A calibration filament containing a sodium-bearing compound is included in combination with the sensing filament and ion collector plate of a sodium ionization detector to permit periodic generation of sodium atoms for the in-situ calibration of the detector.

  18. The CLAS Cherenkov detector

    SciTech Connect

    G. Adams; V. Burkert; R. Carl; T. Carstens; V. Frolov; L. Houghtlin; G. Jacobs; M. Kossov; M. Klusman; B. Kross; M. Onuk; J. Napolitano; J. W. Price; C. Riggs; Y. Sharabian; A. Stavinsky; L. C. Smith; W. A. Stephens; P. Stoler; W. Tuzel; K. Ullrich; A. Vlassovc; A. Weisenberger; M. Witkowski; B. Wojtekhowski; P. F. Yergin; C. Zorn

    2001-06-01

    The design, construction, and performance of the CLAS Cerenkov threshold gas detector at Jefferson Lab is described. The detector consists of 216 optical modules. Each module consists of 3 adjustable mirrors, of lightweight composite construction, a Winston light collecting cone, a 5-inch photomultiplier tube, and specially designed magnetic shielding.

  19. Future particle detector systems

    NASA Astrophysics Data System (ADS)

    Clark, Allan G.

    2000-09-01

    Starting with a short summary of the major new experimental physics programs, we attempt to motivate the reasons why existing general-purpose detectors at Hadron Colliders are what they are, why they are being upgraded, and why new facilities are being constructed. The CDF and ATLAS detectors are used to illustrate these motivations. Selected physics results from the CDF experiment provide evidence for limitations on the detector performance, and new physics opportunities motivate both machine and detector upgrades. This is discussed with emphasis on the improved physics reach of the CDF experiment at the Fermilab Tevatron (√s =2 TeV). From 2005, the Large Hadron Collider (LHC) at CERN will become operational at a collision energy of √s =14 TeV, seven times larger than at the Tevatron Collider. To exploit the physics capability of the LHC, several large detectors are being constructed. The detectors are significantly more complex than those at the Tevatron Collider because of physics and operational constraints. The detector design and technology of the aspects of the large general-purpose detector ATLAS is described.

  20. Arsenic activation neutron detector

    DOEpatents

    Jacobs, E.L.

    1980-01-28

    A detector of bursts of neutrons from a deuterium-deuteron reaction includes a quantity of arsenic adjacent a gamma detector such as a scintillator and photomultiplier tube. The arsenic is activated by the 2.5-MeV neutrons to release gamma radiation which is detected to give a quantitative representation of detected neutrons.

  1. Arsenic activation neutron detector

    DOEpatents

    Jacobs, Eddy L.

    1981-01-01

    A detector of bursts of neutrons from a deuterium-deuteron reaction includes a quantity of arsenic adjacent a gamma detector such as a scintillator and photomultiplier tube. The arsenic is activated by the 2.5 Mev neutrons to release gamma radiation which is detected to give a quantitative representation of detected neutrons.

  2. Particle impact location detector

    NASA Technical Reports Server (NTRS)

    Auer, S. O.

    1974-01-01

    Detector includes delay lines connected to each detector surface strip. When several particles strike different strips simultaneously, pulses generated by each strip are time delayed by certain intervals. Delay time for each strip is known. By observing time delay in pulse, it is possible to locate strip that is struck by particle.

  3. Scanning Seismic Intrusion Detector

    NASA Technical Reports Server (NTRS)

    Lee, R. D.

    1982-01-01

    Scanning seismic intrusion detector employs array of automatically or manually scanned sensors to determine approximate location of intruder. Automatic-scanning feature enables one operator to tend system of many sensors. Typical sensors used with new system are moving-coil seismic pickups. Detector finds uses in industrial security systems.

  4. Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition

    NASA Astrophysics Data System (ADS)

    Martyniuk, Piotr; Benyahia, Djalal; Kowalewski, Andrzej; Kubiszyn, Łukasz; Stępień, Dawid; Gawron, Waldemar; Rogalski, Antoni

    2016-05-01

    In this paper we report on high operating temperature mid-wave infrared detector based on type-II superlattice InAs/GaSb mesa PIN architecture with 50% cut-off wavelength ∼5.2 μm at 230 K. The 1.1 mm thick GaAs substrate was converted into immersion lens to limit an influence of the defects occurring during growth on GaAs substrate and to increase detectivity, ∼2 × 1010 cm Hz1/2/W at 230 K, under reverse bias 100 mV and ∼4 × 109 cm Hz1/2/W at 300 K, under 500 mV. Presented results are better than PIN architectures with the same and lower cut-off wavelength grown on GaAs without immersion lens and grown on GaSb substrates.

  5. Optical property of CR-39 synthesized by doping with methylviologen-encapsulated SiO2 nanocapsules as a solid-state X-ray plate detector

    NASA Astrophysics Data System (ADS)

    Miyoshi, Hirokazu; Kida, Fumio; Yamada, Kenji; Tsuchiya, Koichiro; Hase, Hitoshi

    2016-05-01

    A CR-39 plate synthesized by doping with methylviologen-encapsulated SiO2 nanocapsules was firstly demonstrated as a solid-state X-ray (80 kV) detector for diagnostic examination without etching using an alkali solution. The X-ray-irradiated area was clearly observed as an emission image by exciting with a laser in FLA-9000. The maximum intensity was obtained using a 532 nm laser. The emission intensity at the X-ray-irradiated area increased linearly from 0.5 to 3 Gy with increasing thickness from 1 to 5 mm. In 15-nm-diameter silica nanocapsules and 4-5-mm-thick CR-39, the maximum intensity was observed by X-ray irradiation.

  6. Development of nine-channel 10-micrometer (Hg, Cd)Te pushbroom IR/CCD system

    NASA Technical Reports Server (NTRS)

    White, W. J.; Wasa, S.

    1977-01-01

    The engineering development of the 9-channel detector array is documented. The development of the array demonstrates the feasibility of a self scanned multi-element infrared detector focal plane. Procedures for operating the array are outlined.

  7. Nanomechanical resonance detector

    DOEpatents

    Grossman, Jeffrey C; Zettl, Alexander K

    2013-10-29

    An embodiment of a nanomechanical frequency detector includes a support structure and a plurality of elongated nanostructures coupled to the support structure. Each of the elongated nanostructures has a particular resonant frequency. The plurality of elongated nanostructures has a range of resonant frequencies. An embodiment of a method of identifying an object includes introducing the object to the nanomechanical resonance detector. A resonant response by at least one of the elongated nanostructures of the nanomechanical resonance detector indicates a vibrational mode of the object. An embodiment of a method of identifying a molecular species of the present invention includes introducing the molecular species to the nanomechanical resonance detector. A resonant response by at least one of the elongated nanostructures of the nanomechanical resonance detector indicates a vibrational mode of the molecular species.

  8. Advanced far infrared detectors

    SciTech Connect

    Haller, E.E.

    1993-05-01

    Recent advances in photoconductive and bolometric semiconductor detectors for wavelength 1 mm > {lambda} > 50 {mu}m are reviewed. Progress in detector performance in this photon energy range has been stimulated by new and stringent requirements for ground based, high altitude and space-borne telescopes for astronomical and astrophysical observations. The paper consists of chapters dealing with the various types of detectors: Be and Ga doped Ge photoconductors, stressed Ge:Ga devices and neutron transmutation doped Ge thermistors. Advances in the understanding of basic detector physics and the introduction of modern semiconductor device technology have led to predictable and reliable fabrication techniques. Integration of detectors into functional arrays has become feasible and is vigorously pursued by groups worldwide.

  9. Liquid phase epitaxial growth and characterization of germanium far infrared blocked impurity band detectors

    SciTech Connect

    Bandaru, Jordana

    2001-05-12

    Germanium Blocked Impurity Band (BIB) detectors require a high purity blocking layer (< 10{sup 13} cm{sup -3}) approximately 1 mm thick grown on a heavily doped active layer ({approx} 10{sup 16} cm{sup -3}) approximately 20 mm thick. Epilayers were grown using liquid phase epitaxy (LPE) of germanium out of lead solution. The effects of the crystallographic orientation of the germanium substrate on LPE growth modes were explored. Growth was studied on substrates oriented by Laue x-ray diffraction between 0.02{sup o} and 10{sup o} from the {l_brace}111{r_brace} toward the {l_brace}100{r_brace}. Terrace growth was observed, with increasing terrace height for larger misorientation angles. It was found that the purity of the blocking layer was limited by the presence of phosphorus in the lead solvent. Unintentionally doped Ge layers contained {approx}10{sup 15} cm{sup -3} phosphorus as determined by Hall effect measurements and Photothermal Ionization Spectroscopy (PTIS). Lead purification by vacuum distillation and dilution reduced the phosphorus concentration in the layers to {approx} 10{sup 14} cm{sup -3} but further reduction was not observed with successive distillation runs. The graphite distillation and growth components as an additional phosphorus source cannot be ruled out. Antimony ({approx}10{sup 16} cm{sup -3}) was used as a dopant for the active BIB layer. A reduction in the donor binding energy due to impurity banding was observed by variable temperature Hall effect measurements. A BIB detector fabricated from an Sb-doped Ge layer grown on a pure substrate showed a low energy photoconductive onset ({approx}6 meV). Spreading resistance measurements on doped layers revealed a nonuniform dopant distribution with Sb pile-up at the layer surface, which must be removed by chemomechanical polishing. Sb diffusion into the pure substrate was observed by Secondary Ion Mass Spectroscopy (SIMS) for epilayers grown at 650 C. The Sb concentration at the interface

  10. The LAMBDA photon-counting pixel detector and high-Z sensor development

    NASA Astrophysics Data System (ADS)

    Pennicard, D.; Smoljanin, S.; Struth, B.; Hirsemann, H.; Fauler, A.; Fiederle, M.; Tolbanov, O.; Zarubin, A.; Tyazhev, A.; Shelkov, G.; Graafsma, H.

    2014-12-01

    Many X-ray experiments at third-generation synchrotrons benefit from using single-photon-counting detectors, due to their high signal-to-noise ratio and potential for high-speed measurements. LAMBDA (Large Area Medipix3-Based Detector Array) is a pixel detector system based on the Medipix3 readout chip. It combines the features of Medipix3, such as a small pixel size of 55 μm and flexible functionality, with a large tileable module design consisting of 12 chips (1536 × 512 pixels) and a high-speed readout system capable of running at 2000 frames per second. To enable high-speed experiments with hard X-rays, the LAMBDA system has been combined with different high-Z sensor materials. Room-temperature systems using GaAs and CdTe systems have been produced and tested with X-ray tubes and at synchrotron beamlines. Both detector materials show nonuniformities in their raw image response, but the pixel yield is high and the uniformity can be improved by flat-field correction, particularly in the case of GaAs. High-frame-rate experiments show that useful information can be gained on millisecond timescales in synchrotron experiments with these sensors.

  11. Fourier synthesis image reconstruction by use of one-dimensional position-sensitive detectors.

    PubMed

    Kotoku, Jun'ichi; Makishima, Kazuo; Okada, Yuu; Negoro, Hitoshi; Terada, Yukikatsu; Kaneda, Hidehiro; Oda, Minoru

    2003-07-10

    An improvement of Fourier synthesis optics for hard x-ray imaging is described, and the basic performance of the new optics is confirmed through numerical simulations. The original concept of the Fourier synthesis imager utilizes nonposition-sensitive hard x-ray detectors coupled to individual bigrid modulation collimators. The improved concept employs a one-dimensional position-sensitive detector (such as a CdTe strip detector) instead of the second grid layer of each bigrid modulation collimator. This improves the imaging performance in several respects over the original design. One performance improvement is a two-fold increase in the average transmission, from 1/4 to 1/2. The second merit is that both the sine and cosine components can be derived from a single grid-detector module, and hence the number of imaging modules can be halved. Furthermore, it provides information along the depth direction simultaneously. This in turn enables a three-dimensional imaging hard x-ray microscope for medical diagnostics, incorporating radioactive tracers. A conceptual design of such a microscope is presented, designed to provide a field of view of 4 mm and a spatial resolution of 400 microm.

  12. Recrystallization of PVD CdTe Thin Films Induced by CdCl2 Treatment -- A Comparison Between Vapor and Solution Processes: Preprint

    SciTech Connect

    Mountinho, H. R.; Dhere, R. G.; Romero, M. J.; Jiang, C. S.; To, B.; Al-Jassim, M. M.

    2008-05-01

    This paper describes the large concentration of 60..deg.. <111> twin boundaries that was observed in every CdTe film analyzed in this work, even after recrystallization and grain growth, confirming the low energy of these interfaces.

  13. High-fidelity simulations of CdTe vapor deposition from a bond-order potential-based molecular dynamics method

    NASA Astrophysics Data System (ADS)

    Zhou, X. W.; Ward, D. K.; Wong, B. M.; Doty, F. P.; Zimmerman, J. A.; Nielson, G. N.; Cruz-Campa, J. L.; Gupta, V. P.; Granata, J. E.; Chavez, J. J.; Zubia, D.

    2012-06-01

    CdTe has been a special semiconductor for constructing the lowest-cost solar cells, and the CdTe-based Cd1-xZnxTe alloy has been the leading semiconductor for radiation detection applications. The performance currently achieved for the materials, however, is still far below theoretical expectations. This is because the property-limiting nanoscale defects that are easily formed during the growth of CdTe crystals are difficult to explore in experiments. Here, we demonstrate the capability of a bond-order potential-based molecular dynamics method for predicting the crystalline growth of CdTe films during vapor deposition simulations. Such a method may begin to enable defects generated during vapor deposition of CdTe crystals to be accurately explored.

  14. Investigation of induced recrystallization and stress in close-spaced sublimated and radio-frequency magnetron sputtered CdTe thin films

    SciTech Connect

    Moutinho, H.R.; Dhere, R.G.; Al-Jassim, M.M.; Levi, D.H.; Kazmerski, L.L.

    1999-07-01

    We have induced recrystallization of small grain CdTe thin films deposited at low temperatures by close-spaced sublimation (CSS), using a standard CdCl{sub 2} annealing treatment. We also studied the changes in the physical properties of CdTe films deposited by radio-frequency magnetron sputtering after the same post-deposition processing. We demonstrated that the effects of CdCl{sub 2} on the physical properties of CdTe films are similar, and independent of the deposition method. The recrystallization process is linked directly to the grain size and stress in the films. These studies indicated the feasibility of using lower-temperature processes in fabricating efficient CSS CdTe solar cells. We believe that, after the optimization of the parameters of the chemical treatment, these films can attain a quality similar to CSS films grown using current standard conditions. {copyright} {ital 1999 American Vacuum Society.}

  15. Detectors for Tomorrow's Instruments

    NASA Technical Reports Server (NTRS)

    Moseley, Harvey

    2009-01-01

    Cryogenically cooled superconducting detectors have become essential tools for a wide range of measurement applications, ranging from quantum limited heterodyne detection in the millimeter range to direct searches for dark matter with superconducting phonon detectors operating at 20 mK. Superconducting detectors have several fundamental and practical advantages which have resulted in their rapid adoption by experimenters. Their excellent performance arises in part from reductions in noise resulting from their low operating temperatures, but unique superconducting properties provide a wide range of mechanisms for detection. For example, the steep dependence of resistance with temperature on the superconductor/normal transition provides a sensitive thermometer for calorimetric and bolometric applications. Parametric changes in the properties of superconducting resonators provides a mechanism for high sensitivity detection of submillimeter photons. From a practical point of view, the use of superconducting detectors has grown rapidly because many of these devices couple well to SQUID amplifiers, which are easily integrated with the detectors. These SQUID-based amplifiers and multiplexers have matured with the detectors; they are convenient to use, and have excellent noise performance. The first generation of fully integrated large scale superconducting detection systems are now being deployed. I will discuss the prospects for a new generation of instruments designed to take full advantage of the revolution in detector technology.

  16. ACCESS: Detector Performance

    NASA Astrophysics Data System (ADS)

    Morris, Matthew J.; Kaiser, M.; Rauscher, B. J.; Kimble, R. A.; Kruk, J. W.; Mott, D. B.; Wen, Y.; Foltz, R.; McCandliss, S. R.; Pelton, R. S.; Wright, E. L.; Feldman, P. D.; Moos, H. W.; Riess, A. G.; Benford, D. J.; Gardner, J. P.; Woodgate, B. E.; Bohlin, R.; Deustua, S. E.; Dixon, W. V.; Sahnow, D. J.; Kurucz, R. L.; Lampton, M.; Perlmutter, S.

    2013-01-01

    ACCESS, Absolute Color Calibration Experiment for Standard Stars, is a series of rocket-borne sub-orbital missions and ground-based experiments that will enable improvements in the precision of the astrophysical flux scale through the transfer of absolute laboratory detector standards from the National Institute of Standards and Technology (NIST) to a network of stellar standards with a calibration accuracy of 1% and a spectral resolving power of 500 across the 0.35 to 1.7 micron bandpass (overview Kaiser et al.). The flight detector and detector spare have been integrated with their electronics and flight mount. The controller electronics have been flight qualified. Vibration testing to launch loads and thermal vacuum testing of the detector, mount, and housing have been performed. The flight detector controller boards have been installed into a ruggedized flight housing. They have been successfully vacuum tested for periods significantly longer than the flight length, and components have been heat-sunk and reinforced as necessary. Thermal stability tests have been performed, and results will be presented. Goddard Space Flight Center’s Detector Characterization Lab (DCL) executed initial characterization tests for the flight detector in 2007. These were repeated in 2012, to ensure and establish baseline performance. Current lab characterization tests at Johns Hopkins are ongoing, and results will be presented. NASA sounding rocket grant NNX08AI65G supports this work.

  17. Barrier infrared detectors

    NASA Astrophysics Data System (ADS)

    Martyniuk, P.; Kopytko, M.; Rogalski, A.

    2014-06-01

    In 1959, Lawson and co-workers publication triggered development of variable band gap Hg1-xCdxTe (HgCdTe) alloys providing an unprecedented degree of freedom in infrared detector design. Over the five decades, this material system has successfully fought off major challenges from different material systems, but despite that it has more competitors today than ever before. It is interesting however, that none of these competitors can compete in terms of fundamental properties. They may promise to be more manufacturable, but never to provide higher performance or, with the exception of thermal detectors, to operate at higher temperatures. In the last two decades a several new concepts of photodetectors to improve their performance have been proposed including trapping detectors, barrier detectors, unipolar barrier photodiodes, and multistage detectors. This paper describes the present status of infrared barrier detectors. It is especially addressed to the group of III-V compounds including type-II superlattice materials, although HgCdTe barrier detectors are also included. It seems to be clear that certain of these solutions have merged as a real competitions of HgCdTe photodetectors.

  18. Advanced Gravitational Wave Detectors

    NASA Astrophysics Data System (ADS)

    Blair, D. G.; Howell, E. J.; Ju, L.; Zhao, C.

    2012-02-01

    Part I. An Introduction to Gravitational Wave Astronomy and Detectors: 1. Gravitational waves D. G. Blair, L. Ju, C. Zhao and E. J. Howell; 2. Sources of gravitational waves D. G. Blair and E. J. Howell; 3. Gravitational wave detectors D. G. Blair, L. Ju, C. Zhao, H. Miao, E. J. Howell, and P. Barriga; 4. Gravitational wave data analysis B. S. Sathyaprakash and B. F. Schutz; 5. Network analysis L. Wen and B. F. Schutz; Part II. Current Laser Interferometer Detectors: Three Case Studies: 6. The Laser Interferometer Gravitational-Wave Observatory P. Fritschel; 7. The VIRGO detector S. Braccini; 8. GEO 600 H. Lück and H. Grote; Part III. Technology for Advanced Gravitational Wave Detectors: 9. Lasers for high optical power interferometers B. Willke and M. Frede; 10. Thermal noise, suspensions and test masses L. Ju, G. Harry and B. Lee; 11. Vibration isolation: Part 1. Seismic isolation for advanced LIGO B. Lantz; Part 2. Passive isolation J-C. Dumas; 12. Interferometer sensing and control P. Barriga; 13. Stabilizing interferometers against high optical power effects C. Zhao, L. Ju, S. Gras and D. G. Blair; Part IV. Technology for Third Generation Gravitational Wave Detectors: 14. Cryogenic interferometers J. Degallaix; 15. Quantum theory of laser-interferometer GW detectors H. Miao and Y. Chen; 16. ET. A third generation observatory M. Punturo and H. Lück; Index.

  19. Explanation of red spectral shifts at CdTe grain boundaries

    NASA Astrophysics Data System (ADS)

    Moseley, John

    The best research-cell efficiencies for CdTe thin-film solar cells have recently increased from 17.3% to 20.4%. Despite these impressive recent gains, many improvements in device technology are necessary to reach the detailed-balance efficiency limit for CdTe-based (single-junction, non-concentrator) solar cells of ~32%. Improvements will increasingly rely on knowledge of the fundamental relationships between processing, electrical properties of defects, and device performance. In this study, scanning electron microscope (SEM)-based cathodoluminescence (CL) spectrum imaging was used to examine these fundamental relationships. In CL spectrum imaging we collect a spectrum per pixel in a 256 x 256 pixel SEM image by synchronizing a cryogenic silicon charge-coupled device with the electron-beam positioning. High spatial resolution photon energy maps obtained with this technique can reveal intricate luminescence phenomena that are not apparent in spectroscopic data. CL spectrum imaging was performed at T= 25 K on the back surface of CSS-deposited CdTe thin-films in a CdTe/CdS/SnO_2/glass configuration without back contacting. Both as-deposited and CdCl2 vapor-treated samples were analyzed. Luminescence emission is detected (bands) at ~1.32 eV and ~1.50 eV, which are consistent with Z- and Y-bands. The importance of the Z-band to CdTe solar cells is discussed. For the grains in the as-deposited films, there is a significant redshift in the transition energies near the grain boundaries. For the Z-band, this behavior is due to the effect of the high GB recombination velocity (sX~1x10 4 cm/s) in as-deposited CSS films on the donor-acceptor pair transition mechanism. The concentration of the shallow donor species participating in the Z-band transition was estimated to be ~1017 cm-3 . Based on this estimate, and the spatial correlation between the Z-band and the A-center (VCd-ClTe) complex transitions, ClTe is proposed as is the shallow donor species.

  20. Size-dependent optical edge shifts and electrical conduction behaviour of RF magnetron sputtered CdTe nanocrystals:TiO2 composite thin films

    NASA Astrophysics Data System (ADS)

    Rastogi, A. C.; Sharma, S. N.; Kohli, Sandeep

    2000-11-01

    CdTe nanocrystals sequestered and passivated in an amorphous TiO2 thin film matrix have been prepared by RF sputtering from a composite TiO2:CdTe target. The CdTe nanocrystal size and volume fraction increases from 15 to 40 nm and 2 to 20% respectively as the film thickness increases, typically from 0.05 to 0.25 µm. A systematic dependence of the optical band edge on the CdTe nanocrystal size shows a strong quantum confinement effect. The optical edge shifts are significantly higher than the theoretical prediction based on single-particle confinement of decoupled electrons and holes. This is understood on the basis of nucleation-controlled growth of CdTe nanocrystals by direct vapour phase condensation, in which small nuclei are rapidly passivated by TiO2 depositing at much higher rates. The nano-sized CdTe growth island thus formed comprises of several TiO2 passivated nanocrystals. Electrical conduction behaviour of these films show that tunnelling between the CdTe nanocrystals is not a dominant mechanism, as a three-dimensional network is not realized due to small thickness and lower coverage. The current transport is essentially space-charge-limited. The injection of electrons from nano-sized CdTe crystals follows spherical radial space charge flow which modifies the usual power law dependence from quadratic to 3/2. The analytical description of the current conduction process in composite CdTe:TiO2 is discussed.

  1. Development of a computer model for polycrystalline thin-film CuInSe sub 2 and CdTe solar cells

    SciTech Connect

    Gray, J.L.; Schwartz, R.J.; Lee, Y.J. )

    1992-04-01

    This report describes work to develop a highly accurate numerical model for CuInSe{sub 2} and CdTe solar cells. ADEPT (A Device Emulation Program and Toolbox), a one-dimensional semiconductor device simulation code developed at Purdue University, was used as the basis of this model. An additional objective was to use ADEPT to analyze the performance of existing and proposed CuInSe{sub 2} and CdTe solar cell structures. The work is being performed in two phases. The first phase involved collecting device performance parameters, cell structure information, and material parameters. This information was used to construct the basic models to simulate CuInSe{sub 2} and CdTe solar cells. This report is a tabulation of information gathered during the first phase of this project on the performance of existing CuInSe{sub 2} and CdTe solar cells, the material properties of CuInSr{sub 2}, CdTe, and CdS, and the optical absorption properties of CuInSe{sub 2}, CdTe, and CdS. The second phase will entail further development and the release of a version of ADEPT tailored to CuInSe{sub 2} and CdTe solar cells that can be run on a personal computer. In addition, ADEPT will be used to analyze the performance of existing and proposed CuInSe{sub 2} and CdTe solar cell structures. 110 refs.

  2. The large-area CdTe thin film for CdS/CdTe solar cell prepared by physical vapor deposition in medium pressure

    NASA Astrophysics Data System (ADS)

    Luo, Run; Liu, Bo; Yang, Xiaoyan; Bao, Zheng; Li, Bing; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

    2016-01-01

    The Cadmium telluride (CdTe) thin film has been prepared by physical vapor deposition (PVD), the Ar + O2 pressure is about 0.9 kPa. This method is a newer technique to deposit CdTe thin film in large area, and the size of the film is 30 × 40 cm2. This method is much different from the close-spaced sublimation (CSS), as the relevance between the source temperature and the substrate temperature is weak, and the gas phase of CdTe is transferred to the substrate by Ar + O2 flow. Through this method, the compact and uniform CdTe film (30 × 40 cm2) has been achieved, and the performances of the CdTe thin film have been determined by transmission spectrum, SEM and XRD. The film is observed to be compact with a good crystallinity, the CdTe is polycrystalline with a cubic structure and a strongly preferred (1 1 1) orientation. Using the CdTe thin film (3 × 5 cm2) which is taken from the deposited large-area film, the 14.6% efficiency CdS/CdTe thin film solar cell has been prepared successfully. The structure of the cell is glass/FTO/CdS/CdTe/graphite slurry/Au, short circuit current density (Jsc) of the cell is 26.9 mA/cm2, open circuit voltage (Voc) is 823 mV, and filling factor (FF) is 66.05%. This technique can be a quite promising method to apply in the industrial production, as it has great prospects in the fabricating of large-area CdTe film.

  3. [The impact of ZnS/CdS composite window layer on the quantun efficiency of CdTe solar cell in short wavelength].

    PubMed

    Zhang, Li-xiang; Feng, Liang-huan; Wang, Wen-wu; Xu, Hang; Wu, Li-li; Zhang, Jing-quan; Li, Wei; Zeng, Guang-gen

    2015-02-01

    ZnS/CdS composite window layer was prepared by magnetron sputtering method and then applied to CdTe solar cell. The morphology and structure of films were measured. The data of I-V in light and the quantum efficiency of CdTe solar cells with different window layers were also measured. The effect of ZnS films prepared in different conditions on the performance of CdTe solar cells was researched. The effects of both CdS thickness and ZnS/CdS composite layer on the transmission in short wavelength were studied. Particularly, the quantum efficiency of CdTe solar cells with ZnS/CdS window layer was measured. The results show as follows. With the thickness of CdS window layer reducing from 100 to 50 nm, the transmission increase 18.3% averagely in short wavelength and the quantum efficiency of CdTe solar cells increase 27.6% averagely. The grain size of ZnS prepared in 250 degrees C is smaller than prepared at room temperature. The performance of CdTe solar cells with ZnS/CdS window layer is much better if ZnS deposited at 250 degrees C. This indicates grain size has some effect on the electron transportation. When the CdS holds the same thickness, the transmission of ZnS/CdS window layer was improved about 2% in short wavelength compared with CdS window layer. The quantum efficiency of CdTe solar cells with ZnS/CdS window layer was also improved about 2% in short wavelength compared with that based on CdS window layer. These indicate ZnS/CdS composite window layer can increase the photon transmission in short wavelength so that more photons can be absorbed by the absorbent layer of CdTe solar cells.

  4. Geoneutrinos and the Sno+ Detector

    NASA Astrophysics Data System (ADS)

    Tolich, N.

    2014-12-01

    When the SNO+ detector begins operation within two years, it will be a sensitive geo-neutrino detector. The detectors location in Sudbury, Canada, will allow us to study the geo-neutrino signal originating from the surrounding continental crust. Combining future results from the SNO+ detector with those from the KamLAND and Borexino geo-neutrino detectors, respectively in Japan and Italy, will allow us to study the variation in the geo-neutrino signal for detectors located in very different crust types. I will talk about the status of the SNO+ detector along with the potential geo-neutrino results from such a detector.

  5. Layered semiconductor neutron detectors

    DOEpatents

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  6. PIN Diode Detectors

    NASA Astrophysics Data System (ADS)

    Ramírez-Jiménez, F. J.

    2008-07-01

    A review of the application of PIN diodes as radiation detectors in particle counting, X- and γ-ray spectroscopy, medical applications and charged particle spectroscopy is presented. As a practical example of its usefulness, a PIN diode and a low noise preamplifier are included in a nuclear spectroscopy chain for X-ray measurements. This is a laboratory session designed to review the main concepts needed to set up the detector-preamplifier array and to make measurements of X-ray energy spectra with a room temperature PIN diode. The results obtained are compared with those obtained with a high resolution cooled Si-Li detector.

  7. Decorating CdTe QD-Embedded Mesoporous Silica Nanospheres with Ag NPs to Prevent Bacteria Invasion for Enhanced Anticounterfeit Applications.

    PubMed

    Gao, Yangyang; Dong, Qigeqi; Lan, Shi; Cai, Qian; Simalou, Oudjaniyobi; Zhang, Shiqi; Gao, Ge; Chokto, Harnoode; Dong, Alideertu

    2015-05-13

    Quantum dots (QDs) as potent candidates possess advantageous superiority in fluorescence imaging applications, but they are susceptible to the biological circumstances (e.g., bacterial environment), leading to fluorescence quenching or lose of fluorescent properties. In this work, CdTe QDs were embedded into mesoporous silica nanospheres (m-SiO2 NSs) for preventing QD agglomeration, and then CdTe QD-embedded m-SiO2 NSs (m-SiO2/CdTe NSs) were modified with Ag nanoparticles (Ag NPs) to prevent bacteria invasion for enhanced anticounterfeit applications. The m-SiO2 NSs, which serve as intermediate layers to combine CdTe QDs with Ag NPs, help us establish a highly fluorescent and long-term antibacterial system (i.e., m-SiO2/CdTe/Ag NSs). More importantly, CdTe QD-embedded m-SiO2 NSs showed fluorescence quenching when they encounter bacteria, which was avoided by attaching Ag NPs outside. Ag NPs are superior to CdTe QDs for preventing bacteria invasion because of the structure (well-dispersed Ag NPs), size (small diameter), and surface charge (positive zeta potentials) of Ag NPs. The plausible antibacterial mechanisms of m-SiO2/CdTe/Ag NSs toward both Gram-positive and Gram-negative bacteria were established. As for potential applications, m-SiO2/CdTe/Ag NSs were developed as fluorescent anticounterfeiting ink for enhanced imaging applications.

  8. Understanding misfit strain releasing mechanisms via molecular dynamics simulations of CdTe growth on {112}zinc-blende CdS

    NASA Astrophysics Data System (ADS)

    Zhou, X. W.; Chavez, J. J.; Almeida, S.; Zubia, D.

    2016-07-01

    Molecular dynamics simulations have been used to analyse microstructures of CdTe films grown on {112} surfaces of zinc-blende CdS. Interestingly, CdTe films grow in ⟨331⟩ orientations as opposed to ⟨112⟩ epitaxial orientations. At the CdTe-{331}/CdS-{112} interface, however, there exists an axis that is parallel to the ⟨110⟩ orientation of both CdS and CdTe. It is the direction orthogonal to this ⟨110⟩ that becomes different, being ⟨116⟩ for CdTe and ⟨111⟩ for CdS, respectively. Missing CdTe-{110} planes are found along the ⟨110⟩ axis, suggesting that the misfit strain is released by the conventional misfit dislocation mechanism along this axis. In the orthogonal axis, the misfit strain is found to be more effectively released by the new grain orientation mechanism. Our finding is supported by literature experimental observations of the change of growth direction when Cd0.96Zn0.04Te films are deposited on GaAs. Analyses of energetics clearly demonstrate the cause for the formation of the new orientation, and the insights gained from our studies can help understand the grain structures experimentally observed in lattice mismatched systems.

  9. Polycrystalline CuInSe{sub 2} and CdTe PV solar cells. Annual subcontract report, 15 April 1993--14 April 1994

    SciTech Connect

    Dhere, N.G.

    1994-11-01

    This is an annual technical report on the Phase 2 of a three-year phased research program. The principal objective of the research project is to develop novel and low-cost processes for the fabrication of stable and efficient CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} and CdTe polycrystalline-thin-film solar cells using reliable techniques amenable to scale-up for economic, large-scale manufacture. The aims are to develop a process for the non-toxic selenization so as to avoid the use of extremely toxic H{sub 2}Se in the fabrication of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} thin-film solar cells; to optimize selenization parameters; to develop a process for the fabrication of CdTe solar cells using Cd and Te layers sputtered from elemental targets; to develop an integrated process for promoting the interdiffusion between Cd/Te layers, CdTe phase formation, grain growth, type conversion, and junction formation; to improve adhesion; to minimize residual stresses; to improve the metallic back-contact; to improve the uniformity, stoichiometry, and morphology of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} and CdTe thin films; and to improve the efficiency of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} and CdTe solar cells.

  10. Polycrystalline CuInSe{sub 2} and CdTe solar cells. Annual subcontract report, April 15, 1992--April 14, 1993

    SciTech Connect

    Dhere, N.G.

    1994-08-01

    The principal objective of the research project is to develop processes for the fabrication of cadmium-telluride, CdTe, and copper-indium-gallium-diselenide, Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2}, polycrystalline-thin-film solar cells using techniques that can be scaled-up for economic manufacture on a large scale. The aims are to fabricate CdTe solar cells using Cd and Te layers sputtered from elemental targets; to promote the interdiffusion between Cd/Te layers, CdTe phase formation, and grain growth; to utilize non-toxic selenization so as to avoid the use of extremely toxic H{sub 2}Se in the fabrication of Cu(In{sub l{minus}x}Ga{sub x})Se{sub 2} thin-film solar cells; to optimize selenization parameters; to improve adhesion; to minimize residual stresses; to improve the uniformity, stoichiometry, and morphology of CdTe and Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2} thin films, and the efficiency of CdTe and Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2} solar cells.

  11. Understanding misfit strain releasing mechanisms via molecular dynamics simulations of CdTe growth on {112}zinc-blende CdS

    DOE PAGES

    Zhou, Xiaowang; Chavez, Jose J.; Almeida, Sergio F.; Zubia, David

    2016-07-25

    Molecular dynamics simulations have been used to analyse microstructures of CdTe films grown on {112} surfaces of zinc-blende CdS. Interestingly, CdTe films grow in <331> orientations as opposed to <112> epitaxial orientations. At the CdTe-{331}/CdS-{112} interface, however, there exists an axis that is parallel to the <110> orientation of both CdS and CdTe. It is the direction orthogonal to this <110> that becomes different, being <116> for CdTe and <111> for CdS, respectively. Missing CdTe-{110} planes are found along the <110> axis, suggesting that the misfit strain is released by the conventional misfit dislocation mechanism along this axis. In themore » orthogonal axis, the misfit strain is found to be more effectively released by the new grain orientation mechanism. Our finding is supported by literature experimental observations of the change of growth direction when Cd0.96Zn0.04Te films are deposited on GaAs. Lastly the analyses of energetics clearly demonstrate the cause for the formation of the new orientation, and the insights gained from our studies can help understand the grain structures experimentally observed in lattice mismatched systems.« less

  12. Enhancing the photo-currents of CdTe thin-film solar cells in both short and long wavelength regions

    NASA Astrophysics Data System (ADS)

    Paudel, Naba R.; Yan, Yanfa

    2014-11-01

    The recent increases in the record efficiency of CdTe thin-film solar cell technology largely benefited from enhancements in short circuit current densities (JSC) in the short-wavelength regions by reducing the thicknesses of CdS window layers. Here, we report that the JSC can be enhanced in both short and long wavelength regions by using CdSe as the window layer. Comparing to CdS, CdSe has a higher solubility in CdTe, resulting in stronger interdiffusion at the CdSe/CdTe interface and the formation of CdTe1-xSex alloys with high x values. Due to bowing effects, the CdTe1-xSex alloys exhibit narrower band gaps than CdTe, enhancing the JSC in the CdTe-based solar cells for long-wavelengths. We further report that the use of combined CdS/CdSe window layers can realize high open circuit voltages and maintain the JSC enhancements. Our results suggest a viable approach to improve the performance of CdTe thin-film solar cells.

  13. Photoluminescence of CdTe Crystals Grown by Physical-Vapor Transport

    NASA Technical Reports Server (NTRS)

    Palosz, W.; Grasza, K.; Boyd, P. R.; Cui, Y.; Wright, G.; Roy, U. N.; Burger, A.

    2003-01-01

    High-quality CdTe crystals with resistivities higher than 10(exp 8) omega cm were grown by the physical-vapor transport (PVT) technique. Indium, aluminum, and the transition-metal scandium were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. The emission peaks at 1.584 eV and 1.581 eV were found only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/In complex. The intensity of the broadband centered at 1.43 eV decreases strongly with introduction of Sc.

  14. Photoluminescence of CdTe Crystals Grown by Physical Vapor Transport

    NASA Technical Reports Server (NTRS)

    Palosz, W.; Grasza, K.; Boyd, P. R.; Cui, Y.; Wright, G.; Roy, U. N.; Burger, A.

    2002-01-01

    High quality CdTe crystals with resistivities higher than 10(exp 8) omega cm were grown by the physical vapor transport technique. Indium, Aluminum, and the transition metal Scandium were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. The emission peaks at 1.584 eV and 1.581 eV were found only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/indium complex. The intensity of the broadband centered at 1.43 eV decreases strongly with introduction of Sc.

  15. Effect of Back Contact and Rapid Thermal Processing Conditions on Flexible CdTe Device Performance

    SciTech Connect

    Mahabaduge, Hasitha; Meysing, D. M.; Rance, Will L.; Burst, James M.; Reese, Matthew O.; Wolden, C. A.; Gessert, Timothy A.; Metzger, Wyatt K.; Garner, S.; Barnes, Teresa M.

    2015-06-14

    Flexible CdTe solar cells on ultra-thin glass substrates can enable new applications that require high specific power, unique form-factors, and low manufacturing costs. To be successful, these cells must be cost competitive, have high efficiency, and have high reliability. Here we present back contact processing conditions that enabled us to achieve over 16% efficiency on flexible Corning (R) Willow (R) Glass substrates. We used co-evaporated ZnTe:Cu and Au as our back contact and used rapid thermal processing (RTP) to activate the back contact. Both the ZnTe to Cu ratio and the RTP activation temperature provide independent control over the device performance. We have investigated the influence of various RTP conditions to Cu activation and distribution. Current density-voltage, capacitance-voltage measurements along with device simulations were used to examine the device performance in terms of ZnTe to Cu ratio and rapid thermal activation temperature.

  16. LPE growth and characterization of 1.3 μm (Hg, Cd)Te layers

    NASA Astrophysics Data System (ADS)

    Janik, E.; Ferah, M.; Legros, R.; Triboulet, R.; Brossat, T.; Riant, Y.

    1985-08-01

    The growth of epitaxial layers of Cd xHg 1- xTe with x=0.7, suitable for optoelectronic applications, is obtained. The growth is performed by LPE from a Te-rich solution in a closed tube tipping system, on hydroplane polished CdTe or Cd 1- yZn yTe substrates. The growth apparatus and procedure are described. Layers of thickness 10-40 μm, grown at 500-600°C, were obtained. Attention was paid mainly to the surface morphological quality and good decantation from the layers. The surface morphology was observed by Nomarski contrast photography, the profile concentration measured by electron microprobe, and back reflection Laue patterns are presented also. We report, also, the results of measurements of the optical and electrical parameters of grown layers and the characteristics of photodiodes made from them.

  17. Highly efficient Forster resonance energy transfer between CdTe nanocrystals and two different dye molecules

    NASA Astrophysics Data System (ADS)

    Alphandery, Edouard; Walsh, Laura; Rakovich, Yury P.; Bradley, A. L.; Donegan, John F.; Gaponik, Nicolai; Gunko, Yurii K.

    2004-09-01

    We report highly efficient Forster resonance energy transfer between CdTe nanocrystals and two different dyes, Rhodamine B and Oxazine, where the nanocrystals are mixed with the dyes on top of glass substrates. A faster NC decay curve is observed in the samples containing NCs mixed with dyes than in those containing NCs on their own. For the samples containing nanocrystals mixed with Rhodamine B, room temperature PL measurements are presented as a function of the ratio between the amount of acceptors and the amount of donors, CA/CD. This ratio is varied between 0.03 and 5. The strongest enhancement of the acceptor PL intensity relative to that of the donor PL intensity is reached for 0.2

  18. Electroluminescence of thin-film CdTe solar cells and modules

    NASA Astrophysics Data System (ADS)

    Raguse, John Michael

    Thin-film photovoltaics has the potential to be a major source of world electricity. Mitigation of non-uniformities in thin-film solar cells and modules may help improve photovoltaic conversion efficiencies. In this manuscript, a measurement technique is discussed in detail which has the capability of detecting such non-uniformities in a form useful for analysis. Thin-film solar cells emit radiation while operating at forward electrical bias, analogous to an LED, a phenomena known as electroluminescence (EL). This process relatively is inefficient for polycrystalline CdTe devices, on the order of 10-4%, as most of the energy is converted into heat, but still strong enough for many valuable measurements. A EL system was built at the Colorado State University Photovoltaics Laboratory to measure EL from CdTe cells and modules. EL intensity normalized to exposure time and injection current density has been found to correlate very well with the difference between ideal and measured open-circuit voltage from devices that include a GaAs cell, an AlGaAs LED, and several CdTe cells with variations in manufacturing. Furthermore, these data points were found to be in good agreement when overlaid with calibrated data from two additional sources. The magnitude of the inverse slope of the fit is in agreement with the thermal voltage and the intercept was found to have a value near unity, in agreement with theory. The expanded data set consists of devices made from one of seven different band gaps and spans eight decades of EQELED efficiencies. As expected, cells which exhibit major failure of light-dark J-V superposition did not follow trend of well-behaved cells. EL images of selected defects from CdTe cells and modules are discussed and images are shown to be highly sensitive to defects in devices, since the intensity depends exponentially on the cells' voltages. The EL technique has proven to be a useful high-throughput tool for screening of cells. In addition to EL images

  19. CdTe and CdSe Quantum Dots Cytotoxicity: A Comparative Study on Microorganisms

    PubMed Central

    Gomes, Suzete A.O.; Vieira, Cecilia Stahl; Almeida, Diogo B.; Santos-Mallet, Jacenir R.; Menna-Barreto, Rubem F. S.; Cesar, Carlos L.; Feder, Denise

    2011-01-01

    Quantum dots (QDs) are colloidal semiconductor nanocrystals of a few nanometers in diameter, being their size and shape controlled during the synthesis. They are synthesized from atoms of group II–VI or III–V of the periodic table, such as cadmium telluride (CdTe) or cadmium selenium (CdSe) forming nanoparticles with fluorescent characteristics superior to current fluorophores. The excellent optical characteristics of quantum dots make them applied widely in the field of life sciences. Cellular uptake of QDs, location and translocation as well as any biological consequence, such as cytotoxicity, stimulated a lot of scientific research in this area. Several studies pointed to the cytotoxic effect against micoorganisms. In this mini-review, we overviewed the synthesis and optical properties of QDs, and its advantages and bioapplications in the studies about microorganisms such as protozoa, bacteria, fungi and virus. PMID:22247686

  20. Spectroscopic and electrochemical study of CdTe nanocrystals capped with thiol mixtures

    NASA Astrophysics Data System (ADS)

    Matos, Charlene R. S.; Souza, Helio O., Jr.; Candido, Luan P. M.; Costa, Luiz P.; Santos, Francisco A.; Alencar, Marcio A. R. C.; Abegao, Luis M. G.; Rodrigues, Jose J., Jr.; Midori Sussuchi, Eliana; Gimenez, Iara F.

    2016-06-01

    Here we report the aqueous synthesis of CdTe nanocrystals capped with 3-mercaptopropionic acid (MPA) and the evaluation of the effect of mixing different thiols with MPA on the spectroscopic and electrochemical properties. Additional ligands were cysteine (CYS) and glutathione (GSH). CYS and GSH produce opposite effects on the photoluminescence quantum yield (QY) with a decrease and increase in QY in comparison to MPA, respectively. All samples exhibited monoexponential photoluminescence decays indicating the presence of high-quality nanocrystals. Electrochemical measurements evidenced the presence of several redox peaks and allowed the calculation of the electrochemical band gaps, which were in agreement with the values estimated from absorption spectra and reflected differences in nanocrystal size.