Sample records for mocvd ybco films

  1. In-situ deposition of YBCO high-Tc superconducting thin films by MOCVD and PE-MOCVD

    NASA Technical Reports Server (NTRS)

    Zhao, J.; Noh, D. W.; Chern, C.; Li, Y. Q.; Norris, P. E.; Kear, B.; Gallois, B.

    1991-01-01

    Metal-Organic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T(sub c) greater than 90 K and J(sub c) of approximately 10(exp 4) A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology.

  2. In Situ deposition of YBCO high-T(sub c) superconducting thin films by MOCVD and PE-MOCVD

    NASA Technical Reports Server (NTRS)

    Zhao, J.; Noh, D. W.; Chern, C.; Li, Y. Q.; Norris, P.; Gallois, B.; Kear, B.

    1990-01-01

    Metalorganic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T( sub c) greater than 90 K and Jc approx. 10 to the 4th power A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metalorganic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology.

  3. Preparation of SmBCO layer for the surface optimization of GdYBCO film by MOCVD process based on a simple self-heating technology

    NASA Astrophysics Data System (ADS)

    Zhao, Ruipeng; Zhang, Fei; Liu, Qing; Xia, Yudong; Lu, Yuming; Cai, Chuanbing; Tao, Bowan; Li, Yanrong

    2018-07-01

    The MOCVD process was adopted to grow the REBa2Cu3O7-δ ((REBCO), RE = rare earth elements) films on the LaMnO3 (LMO) templates. Meanwhile, the LMO-template tapes are heated by the joule effect after applying a heating current through the Hastelloy metal substrates. The surface of GdYBCO films prepared by MOCVD method is prone to form outgrowths. So the surface morphology of GdYBCO film is optimized by depositing the SmBCO layer, which is an important process method for the preparation of high-quality multilayer REBCO films. At last, the GdYBCO/SmBCO/GdYBCO multilayer films were successfully prepared on the LMO templates based on the simple self-heating method. It is demonstrated that the GdYBCO surface was well improved by the characterization analysis of scanning electron microscope. And the Δω of REBCO (005) and Δφ of REBCO (103), which were performed by an X-ray diffraction system, are respectively 1.3° and 3.3° What's more, the critical current density (Jc) has been more than 3 MA/cm2 (77 K, 0 T) and the critical current (Ic) basically shows a trend of good linear increase with the increase of the number of REBCO layers.

  4. The Improvement of Utilization Ratio of Metal Organic Sources for the Low Cost Preparation of MOCVD-synthesized YBCO Films based on a Self-heating Technology

    NASA Astrophysics Data System (ADS)

    Zhao, Ruipeng; Liu, Qing; Xia, Yudong; Tao, Bowan; Li, Yanrong

    2017-12-01

    We have successfully applied metal organic chemical vapor deposition (MOCVD) to synthesize biaxially textured YBa2Cu3O7-δ (YBCO) superconducting films on the templates of LaMnO3/epitaxial MgO/IBAD-MgO/solution deposition planarization (SDP) Y2O3/Hastelloy tape. The YBCO films have obtained dense and smooth surface with good structure and performance. A new self-heating method, which replaced the conventional heating-wire radiation heating method, has been used to heat the Hastelloy metal tapes by us. Compared with the heating-wire radiation heating method, the self-heating method shows higher energy efficiency and lower power consumption, which has good advantage to simplify the structure of the MOCVD system. Meanwhile, the utilization ratio of metal organic sources can be increased from 6% to 20% through adopting the new self-heating method. Then the preparation cost of the YBCO films can be also greatly reduced.

  5. Multi-Aperture Shower Design for the Improvement of the Transverse Uniformity of MOCVD-Derived GdYBCO Films

    PubMed Central

    Zhao, Ruipeng; Liu, Qing; Xia, Yudong; Zhang, Fei; Lu, Yuming; Cai, Chuanbing; Tao, Bowan; Li, Yanrong

    2017-01-01

    A multi-aperture shower design is reported to improve the transverse uniformity of GdYBCO superconducting films on the template of sputtered-LaMnO3/epitaxial-MgO/IBAD-MgO/solution deposition planarization (SDP)-Y2O3-buffered Hastelloy tapes. The GdYBCO films were prepared by the metal organic chemical vapor deposition (MOCVD) process. The transverse uniformities of structure, morphology, thickness, and performance were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), step profiler, and the standard four-probe method using the criteria of 1 μV/cm, respectively. Through adopting the multi-aperture shower instead of the slit shower, measurement by step profiler revealed that the thickness difference between the middle and the edges based on the slit shower design was well eliminated. Characterization by SEM showed that a GdYBCO film with a smooth surface was successfully prepared. Moreover, the transport critical current density (Jc) of its middle and edge positions at 77 K and self-field were found to be over 5 MA/cm2 through adopting the micro-bridge four-probe method. PMID:28914793

  6. High utilization ratio of metal organic sources for MOCVD-derived GdYBCO films based on a narrow channel reaction chamber

    NASA Astrophysics Data System (ADS)

    Zhao, Ruipeng; Liu, Qing; Xia, Yudong; Tang, Hao; Lu, Yuming; Cai, Chuanbing; Tao, Bowan; Li, Yanrong

    2018-01-01

    A narrow channel reaction chamber is designed in our home-made MOCVD system and applied to deposit GdYBCO films on the template of LaMnO3/epitaxial MgO/IBAD-MgO/solution deposition planarization-Y2O3-buffered Hastelloy tapes. In the reaction chamber, metal organic sources are transferred from the inlet to the outlet along the direction of the tape movement. Thus, compared to the vertical injection way of metal organic sources, the residence time of metal organic sources on the surface of substrates would be extended through adopting the novel reaction chamber. Therefore, the utilization of metal organic sources, which is calculated according to the measured results of experiments, can reach 31%. Additionally, the utilization ratio of metal organic sources based on the novel reaction chamber is basically two times as much as that of the commonly used vertical injection slit shower. What is more, through adjusting the process, the critical current density of 300 nm thick GdYBCO film prepared the reel-to-reel way has reached 3.2 MA cm-2 (77 K, 0 T).

  7. Effect of the Cu/Ba ratio for the YBCO deposition onto IBAD template by the MOCVD method

    NASA Astrophysics Data System (ADS)

    Choi, J. K.; Kim, H. J.; Jun, B. H.; Kim, C. J.

    2005-10-01

    YBa2Cu3O7-x (YBCO) thin films were fabricated by the metal organic chemical vapor deposition (MOCVD) using a single liquid source. The copper/barium (Cu/Ba) ratio was varied from 1.26 to 1.38 to optimize the deposition condition. The IBAD template (CeO2/YSZ/stainless steel) was used as a substrate. The growth features of the YBCO films were not significantly influenced by the Cu/Ba ratio, while the superconducting transition temperature (Tc) and critical current (Ic) depended on the Cu/Ba ratio. When Cu/Ba ratio was between 1.26 and 1.29, Tc was as low as 80 K, while as Cu/Ba ratio increased to 1.38, it increased to above 85 K. The highest Tc (89.0 K) and Ic (46.3 A/cm-width) were achieved at the Cu/Ba ratio of 1.38 (Y:Ba:Cu = 1:2.1:2.9). It indicates that the optimum Cu/Ba ratio which differs from stoichiometric balance exists for the formation of the superconducting phase with a high Tc and Ic in MOCVD method.

  8. High quality uniform YBCO film growth by the metalorganic deposition using trifluoroacetates

    NASA Astrophysics Data System (ADS)

    Wang, S. S.; Zhang, Z. L.; Wang, L.; Gao, L. K.; Liu, J.

    2017-03-01

    A need exists for the large-area superconducting YBa2Cu3O7-x (YBCO) films with high critical current density for microwave communication and/or electric power applications. Trifluoroacetic metalorganic (TFA-MOD) method is a promising low cost technique for large-scale production of YBCO films, because it does not need high vacuum device and is easily applicable to substrates of various shape and size. In this paper, double-sided YBCO films with maximum 2 in diameter were prepared on LaAlO3 substrates by TFA-MOD method. Inductive critical current densitiy Jc, microwave surface resistance Rs, as well as the microstructure were characterized. A newly homemade furnace system was used to epitaxially grown YBCO films, which can improve the uniformity of YBCO film significantly by gas supply and temperature distribution proper design. Results showed that the large area YBCO films were very uniform in microstructure and thickness distribution, an average inductive Jc in excess of 6 MA/cm2 with uniform distribution, and low Rs (10 GHz) below 0.3 mΩ at 77 K were obtained. Andthe film filter may be prepared to work at temperatures lower than 74 K. These results are very close to the highest value of YBCO films made by conventional vacuum method, so we show a very promising route for large-scale production of high quality large-area YBCO superconducting films at a lower cost.

  9. Strong Flux Pinning of Nano-Sized Ysz Particles in Ybco Films Prepared by Mod Method

    NASA Astrophysics Data System (ADS)

    Ye, S.; Suo, H. L.; Liu, M.; Tang, X.; Wu, Z. P.; Zhao, Y.; Zhou, M. L.

    The YBCO films with doped YSZ nanoparticles have been prepared successfully by metal organic doepositon method using trifluoroacetates (TFA-MOD) through dissolving Zr organic salt into the YBCO precursor solution. The doped films have well in-plane and out-plane textures detected by both XRD Φ-scan and ω-scan. The YSZ nanoparticles with the size of about 5 ~ 15 nm were observed on the surface of the YBCO films using both FE-SEM and TEM. By comparing the superconducting properties, it was found that the doped YBCO films had lower Tc than that of undoped YBCO films. However, as increasing the applied magnetic field, Jc of the doped YBCO films were much better than that of undoped one. The Jc was as higher as 2.5 times than that of undoped YBCO film at 77 K and 1 T applied field.

  10. High performance YBCO films. Quarterly status report No. 6, 1 February-30 April 1993. [YBCO (yttrium barium copper oxides)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Denlinger, E.J.; Fathy, A.; Kalokitis, D.

    1993-04-30

    YBCO on MgF2 withstood post annealing to 750 deg C without deterioration. This allows the deposition of high quality multiple layer YBCO films onto both sides of a MgF2 substrate. GdBaCuO films were deposited onto LaAlO3 and appear to be superior to YBCO in terms of lower particulate density, slightly higher T[sub c]'s, and higher critical current density. The ramifications could be very beneficial to the MCM program. Furthermore, the tolerance of these films to a wider range of deposition conditions indicates a possibility of using these films on MgF2.

  11. Structural and electrical properties of epitaxial YBCO films on Si (Abstract Only).

    NASA Astrophysics Data System (ADS)

    Fork, David K.; Barrera, A.; Phillips, Julia M.; Newman, N.; Fenner, David B.; Geballe, Theodore H.; Connell, G. A. N.; Boyce, James B.

    1991-03-01

    Efforts to grow high quality films of YBCO on Si have been complicated by factors discussed in Ref. 1, chief among them being the reaction between YBCO and Si, which is damaging even at 550 C. This is well below the customary temperatures for YBCO film growth. To avoid the reaction problem, epitaxial YBCO films were grown on Si (100) using an intermediate buffer layer of yttria-stabilized zirconia (YSZ).2 Both layers are grown via an entirely in situ process by pulsed laser deposition (PLD). Although the buffer layer prevents reaction, another problem arises; the large difference in thermal expansion coefficients between silicon and YBCO causes strain at room temperature. Thin (<500 A) YBCO films are unrelaxed and under tensile strain with a distorted unit cell. Thicker films are cracked and have poorer electrical properties. The thermal strain may be reduced by growing on silicon-on-sapphire (SOS) rather than silicon.3 This allows the growth of films of arbitrary thickness. Ion channeling reveals a high degree of crystalline perfection with a channeling minimum yield for Ba as low as 12% on either silicon or SOS. The normal state resistivity is 250-300 i-cm at 300 K; the critical temperature, Tc (R=0), is 86-88 K with a transition width (ATc) of I K. Critical current densities (J)°f 2x107 A/cm2 at 4.2 K and >2x106 A/cm2 at 77 K have been achieved. In addition, the surface resistance of a YBCO film on SOS was measured against Nb at 4.2 K. At 10 GHz, a value of 45 was obtained. This compares favorably to values reported for LaAlO3. Application of this technology to produce reaction patterned microstrip lines has been tested.4 This was done by ion milling away portions of the YSZ buffer layer prior to the YBCO deposition. YBCO landing on regions of exposed Si reacts to form an insulator. This technique was used to make 3 micron lines 1.5 mm long. The resulting structure had a Jc of l.6xl06 A/cm2 at 77 K. Isolation of separate structures exceeded 20 M. Several

  12. Optimization of Thick, Large Area YBCO Film Growth Through Response Surface Methods

    NASA Astrophysics Data System (ADS)

    Porzio, J.; Mahoney, C. H.; Sullivan, M. C.

    2014-03-01

    We present our work on the optimization of thick, large area YB2C3O7-δ (YBCO) film growth through response surface methods. Thick, large area films have commercial uses and have recently been used in dramatic demonstrations of levitation and suspension. Our films are grown via pulsed laser deposition and we have optimized growth parameters via response surface methods. Response surface methods is a statistical tool to optimize selected quantities with respect to a set of variables. We optimized our YBCO films' critical temperatures, thicknesses, and structures with respect to three PLD growth parameters: deposition temperature, laser energy, and deposition pressure. We will present an overview of YBCO growth via pulsed laser deposition, the statistical theory behind response surface methods, and the application of response surface methods to pulsed laser deposition growth of YBCO. Results from the experiment will be presented in a discussion of the optimized film quality. Supported by NFS grant DMR-1305637

  13. Vortex pinning landscape in MOD-TFA YBCO nanostroctured films

    NASA Astrophysics Data System (ADS)

    Gutierrez, J.; Puig, T.; Pomar, A.; Obradors, X.

    2008-03-01

    A methodology of general validity to study vortex pinning in YBCO based on Jc transport measurements is described. It permits to identify, separate and quantify three basic vortex pinning contributions associated to anisotropic-strong, isotropic-strong and isotropic-weak pinning centers. Thereof, the corresponding vortex pinning phase diagrams are built up. This methodology is applied to the new solution-derived YBCO nanostructured films, including controlled interfacial pinning by the growth of nanostructured templates by means of self-assembled processes [1] and YBCO-BaZrO3 nanocomposites prepared by modified solution precursors. The application of the methodology and comparison with a standard solution-derived YBCO film [2], enables us to identify the nature and the effect of the additional pinning centers induced. The nanostructured templates films show c-axis pinning strongly increased, controlling most of the pinning phase diagram. On the other hand, the nanocomposites have achieved so far, the highest pinning properties in HTc-superconductors [3], being the isotropic-strong defects contribution the origin of their unique properties. [1] M. Gibert et al, Adv. Mat. vol 19, p. 3937 (2007) [2] Puig.T et al, SuST EUCAS 2007 (to be published) [3] J. Gutierrez et al, Nat. Mat. vol. 6, p. 367 (2007) * Work supported by HIPERCHEM, NANOARTIS and MAT2005-02047

  14. Pulsed laser deposition of YBCO films on ISD MgO buffered metal tapes

    NASA Astrophysics Data System (ADS)

    Ma, B.; Li, M.; Koritala, R. E.; Fisher, B. L.; Markowitz, A. R.; Erck, R. A.; Baurceanu, R.; Dorris, S. E.; Miller, D. J.; Balachandran, U.

    2003-04-01

    Biaxially textured magnesium oxide (MgO) films deposited by inclined-substrate deposition (ISD) are desirable for rapid production of high-quality template layers for YBCO-coated conductors. High-quality YBCO films were grown on ISD MgO buffered metallic substrates by pulsed laser deposition (PLD). Columnar grains with a roof-tile surface structure were observed in the ISD MgO films. X-ray pole figure analysis revealed that the (002) planes of the ISD MgO films are tilted at an angle from the substrate normal. A small full-width at half maximum (FWHM) of approx9° was observed in the phi-scan for ISD MgO films deposited at an inclination angle of 55°. In-plane texture in the ISD MgO films developed in the first approx0.5 mum from the substrate surface, and then stabilized with further increases in film thickness. Yttria-stabilized zirconia and ceria buffer layers were deposited on the ISD MgO grown on metallic substrates prior to the deposition of YBCO by PLD. YBCO films with the c-axis parallel to the substrate normal have a unique orientation relationship with the ISD MgO films. An orientation relationship of YBCOlangle100rangleparallelMgOlangle111rangle and YBCOlangle010rangleparallelMgOlangle110rangle was measured by x-ray pole figure analyses and confirmed by transmission electron microscopy. A Tc of 91 K with a sharp transition and transport Jc of 5.5 × 105 A cm-2 at 77 K in self-field were measured on a YBCO film that was 0.46 mum thick, 4 mm wide and 10 mm long.

  15. High performance YBCO films. Report for 1 August-31 October 1992

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Denlinger, E.J.; Fathy, A.; Kalokitis, D.

    1992-10-31

    The objective of this program is to identify suitable low loss, low dielectric constant substrates and develop and optimize deposition processes for high quality YBCO films including the necessary buffer layers. Ultimate goals are large area substrates having double-sided HTS coating with a surface resistance ten times lower than copper at 40 GHz. High quality HTS films on low dielectric constant substrates are expected to find widespread use in advanced millimeter wave components, in extending the power handling capability of microwave and millimeter wave circuitry, and in facilitating high speed computer interconnects. Sample demonstration circuits will be built toward themore » end of the program. We have successfully deposited a high quality YBCO film on a good low loss and low dielectric constant substrate, magnesium fluoride (e=5). With the use of two buffer layers (magnesium oxide and strontium titanate) between the YBCO and the substrate, transition temperatures of 89 deg K and transition widths of about 0.5 deg K were achieved. The critical current density Jc of 4 x 10 6 A/cm2 at 77K in zero field is among the highest reported for YBCO films. The magnesium fluoride (MgF2) substrate has a tetragonal structure with a dielectric constant of 5.2 in the plane of the substrate and 4.6 perpendicular to the substrate surface. It has a good harness (-575 Knoop) and a linear thermal expansion coefficient that closely matches YBCO and the buffer layers.« less

  16. Over-current carrying characteristics of rectangular-shaped YBCO thin films prepared by MOD method

    NASA Astrophysics Data System (ADS)

    Hotta, N.; Yokomizu, Y.; Iioka, D.; Matsumura, T.; Kumagai, T.; Yamasaki, H.; Shibuya, M.; Nitta, T.

    2008-02-01

    A fault current limiter (FCL) may be manufactured at competitive qualities and prices by using rectangular-shaped YBCO films which are prepared by metal-organic deposition (MOD) method, because the MOD method can produce large size elements with a low-cost and non-vacuum technique. Prior to constructing a superconducting FCL (SFCL), AC over-current carrying experiments were conducted for 120 mm long elements where YBCO thin film of about 200 nm in thickness was coated on sapphire substrate with cerium oxide (CeO2) interlayer. In the experiments, only single cycle of the ac damping current of 50 Hz was applied to the pure YBCO element without protective metal coating or parallel resistor and the magnitude of the current was increased step by step until the breakdown phenomena occurred in the element. In each experiment, current waveforms flowing through the YBCO element and voltage waveform across the element were measured to get the voltage-current characteristics. The allowable over-current and generated voltage were successfully estimated for the pure YBCO films. It can be pointed out that the lower n-value trends to bring about the higher allowable over-current and the higher withstand voltage more than tens of volts. The YBCO film having higher n-value is sensitive to the over-current. Thus, some protective methods such as a metal coating should be employed for applying to the fault current limiter.

  17. Fast infrared response of YBCO thin films

    NASA Technical Reports Server (NTRS)

    Ballentine, P. H.; Kadin, A. M.; Donaldson, W. R.; Scofield, J. H.; Bajuk, L.

    1990-01-01

    The response to short infrared pulses of some epitaxial YBCO films prepared by sputter deposition and by electron-beam evaporation is reported. The response is found to be essentially bolometric on the ns timescale, with some indirect hints of nonequilibrium electron transport on the ps scale. Fast switching could be obtained either by biasing the switch close to the critical current or by cooling the film below about 20 K. These results are encouraging for potential application to a high-current optically-triggered opening switch.

  18. Metal-organic chemical vapor deposition of cerium oxide, gallium-indium-oxide, and magnesium oxide thin films: Precursor design, film growth, and film characterization

    NASA Astrophysics Data System (ADS)

    Edleman, Nikki Lynn

    A new class of volatile, low-melting, fluorine-free lanthanide metal-organic chemical vapor deposition (MOCVD) precursors has been developed. The neutral, monomeric cerium, neodymium, gadolinium, and erbium complexes are coordinatively saturated by a versatile, multidentate, ether-functionalized beta-ketoiminate ligand, and complex melting point and volatility characteristics can be tuned by altering the alkyl substituents on the ligand periphery. Direct comparison with lanthanide beta-diketonate complexes reveals that the present precursor class is a superior choice for lanthanide oxide MOCVD. Epitaxial CeO 2 buffer layer films have been grown on (001) YSZ substrates by MOCVD at significantly lower temperatures than previously reported using one of the newly developed cerium precursors. High-quality YBCO films grown on these CeO2 buffer layers by POMBE exhibit very good electrical transport properties. The cerium complex has therefore been explicitly demonstrated to be a stable and volatile precursor and is attractive for low-temperature growth of coated conductor multilayer structures by MOCVD. Gallium-indium-oxide thin films (GaxIn2-xO 3), x = 0.0˜1.1, have been grown by MOCVD using the volatile metal-organic precursors In(dpm)3 and Ga(dpm)3. The films have a homogeneously Ga-substituted, cubic In2O3 microstructure randomly oriented on quartz or heteroepitaxial on (100) YSZ single-crystal substrates. The highest conductivity of the as-grown films is found at x = 0.12. The optical transmission window and absolute transparency of the films rivals or exceeds that of the most transparent conductive oxides known. Reductive annealing results in improved charge transport characteristics with little loss of optical transparency. No significant difference in electrical properties is observed between randomly oriented and heteroepitaxial films, thus arguing that carrier scattering effects at high-angle grain boundaries play a minor role in the film conductivity mechanism

  19. Enhanced pinning in YBCO films with BaZrO.sub.3 nanoparticles

    DOEpatents

    Driscoll, Judith L.; Foltyn, Stephen R.

    2010-06-15

    A process and composition of matter are provided and involve flux pinning in thin films of high temperature superconductive oxides such as YBCO by inclusion of particles including barium and a group 4 or group 5 metal, such as zirconium, in the thin film.

  20. High temperature superconducting YBCO microwave filters

    NASA Astrophysics Data System (ADS)

    Aghabagheri, S.; Rasti, M.; Mohammadizadeh, M. R.; Kameli, P.; Salamati, H.; Mohammadpour-Aghdam, K.; Faraji-Dana, R.

    2018-06-01

    Epitaxial thin films of YBCO high temperature superconductor are widely used in telecommunication technology such as microwave filter, antenna, coupler and etc., due to their lower surface resistance and lower microwave loss than their normal conductor counterparts. Thin films of YBCO were fabricated by PLD technique on LAO substrate. Transition temperature and width were 88 K and 3 K, respectively. A filter pattern was designed and implemented by wet photolithography method on the films. Characterization of the filter at 77 K has been compared with the simulation results and the results for a made gold filter. Both YBCO and gold filters show high microwave loss. For YBCO filter, the reason may be due to the improper contacts on the feedlines and for gold filter, low thickness of the gold film has caused the loss increased.

  1. Influence of artificial pinning centers on structural and superconducting properties of thick YBCO films on ABAD-YSZ templates

    NASA Astrophysics Data System (ADS)

    Pahlke, Patrick; Sieger, Max; Ottolinger, Rick; Lao, Mayraluna; Eisterer, Michael; Meledin, Alexander; Van Tendeloo, Gustaaf; Hänisch, Jens; Holzapfel, Bernhard; Schultz, Ludwig; Nielsch, Kornelius; Hühne, Ruben

    2018-04-01

    Recent efforts in the development of YBa2Cu3O7-x (YBCO) coated conductors are devoted to the increase of the critical current I c in magnetic fields. This is typically realized by growing thicker YBCO layers as well as by the incorporation of artificial pinning centers. We studied the growth of doped YBCO layers with a thickness of up to 7 μm using pulsed laser deposition with a growth rate of about 1.2 nm s-1. Industrially fabricated ion-beam textured YSZ templates based on metal tapes were used as substrates for this study. The incorporation of BaHfO3 (BHO) or Ba2Y(Nb0.5Ta0.5)O6 (BYNTO) secondary phase additions leads to a denser microstructure compared to undoped films. A purely c-axis-oriented YBCO growth is preserved up to a thickness of about 4 μm, whereas misoriented texture components were observed in thicker films. The critical temperature is slightly reduced compared to undoped films and independent of film thickness. The critical current density J c of the BHO- and BYNTO-doped YBCO layers is lower at 77 K and self-field compared to pure YBCO layers; however, I c increases up to a thickness of 5 μm. A comparison between films with a thickness of 1.3 μm revealed that the anisotropy of the critical current density J c(θ) strongly depends on the incorporated pinning centers. Whereas BHO nanorods lead to a strong B∣∣c-axis peak, the overall anisotropy is significantly reduced by the incorporation of BYNTO forming a mixture of short c-axis-oriented nanorods and small (a-b)-oriented platelets. As a result, the J c values of the doped films outperform the undoped samples at higher fields and lower temperatures for most magnetic field directions.

  2. MOCVD growth and study of thin films of indium nitride

    NASA Astrophysics Data System (ADS)

    Jain, Abhishek

    This thesis is focused on a study of MOCVD growth of InN with the goal of providing new information on the effects of growth conditions and buffer/substrate materials on InN film properties. Initial studies, using both (111) Si and (0001) sapphire substrates, identified an optimum growth temperature window of 540--560°C for the formation of stable InN films. When attempting to grow InN films on sapphire with thicknesses greater than approximately 150 nanometers using an AlN buffer layer, the InN films were observed to delaminate from the buffer/substrate at growth temperature. The combined effect of compressive stress due to high lattice mismatch between InN and AlN (˜14%) and tensile stress due to grain coalescence along with the relatively weak bond strength of InN compared to GaN and AlN, is believed to cause the InN film to crack along the interface and delaminate. To further investigate the effect of the buffer layer on InN growth, studies were carried out using GaN films grown on sapphire as the growth template. Recent MBE results had indicated a significant difference in the thermal stability and growth mode of In-polar and N-polar InN, with improved properties reported for N-polar material grown on N-polar GaN. MOCVD growth of N-polar GaN is very difficult; consequently, all of the results reported in the literature for InN growth on GaN were likely carried out on Ga-polar material resulting in films with a high surface roughness. By utilizing N-polar and Ga-polar GaN films, it was possible to produce N-polar and In-polar InN films by MOCVD, as determined by convergent beam electron diffraction (CBED) analysis. Furthermore, the polarity was found to dramatically alter the surface roughness and growth mode of the InN films with enhanced lateral growth and reduced surface roughness obtained for N-polar InN. A qualitative model was proposed to explain the different growth mechanisms observed for In-polar and N-polar InN. In spite of the improvements in

  3. High speed production of YBCO precursor films by advanced TFA-MOD process

    NASA Astrophysics Data System (ADS)

    Ichikawa, H.; Nakaoka, K.; Miura, M.; Sutoh, Y.; Nakanishi, T.; Nakai, A.; Yoshizumi, M.; Izumi, T.; Shiohara, Y.

    2009-10-01

    YBa 2Cu 3O 7-y (YBCO) long tapes derived from the metal-organic deposition (MOD) method using the starting solution containing trifluoroacetate (TFA) have been developed with high critical currents ( I c) over 200 A/cm-width. However, high speed production of YBCO films is simultaneously necessary to satisfy the requirements of electric power device applications in terms of cost and the amounts of the tapes. In this work, we developed a new TFA-MOD starting solution using F-free salt of Y, TFA salt of Ba and Cu-Octylate for application to the coating/calcination process and discussed several issues by using the Multi-turn (MT) Reel-to-Reel (RTR) system calcination furnace for the purpose of high throughput without degradation of the properties. The coating system was improved for uniform deposition qualities in both longitudinal and transversal directions. YBCO films using the new starting solution at the traveling rate of 10 m/h in coating/calcination by the MT-RTR calcination furnace showed the values of the critical current density of 1.6 MA/cm 2 as thick as 1.5 μm at 77 K under the self fields after firing at the high heating rate in the crystallization.

  4. Fabrication and characterization of hybrid Nb-YBCO dc SQUIDs

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Frack, E.K.; Drake, R.E.; Patt, R.

    This paper reports on the fabrication of hybrid low T{sub c}/high T{sub c} dc SQUIDs of two flavors. The first kind utilizes niobium tunnel junctions and a YBCO film strip as the most inductive portion of the SQUID loop. This configuration allows a direct measurement of the inductance of the YBCO microstrip from which the effective penetration depth can be calculated. The successful fabrication of these SQUIDs has required 1. superconducting Nb-to-YBCO contacts, 2. deposition and patterning of an SiO{sub 2} insulation layer over YBCO, and 3. selective patterning of niobium and SiO{sub 2} relative to YBCO. All these processmore » steps are pertinent to the eventual use of YBCO thin films in electronic devices.« less

  5. Growth of indium gallium arsenide thin film on silicon substrate by MOCVD technique

    NASA Astrophysics Data System (ADS)

    Chowdhury, Sisir; Das, Anish; Banerji, Pallab

    2018-05-01

    Indium gallium arsenide (InGaAs) thin film with indium phosphide (InP) buffer has been grown on p-type silicon (100) by Metal Organic Chemical Vapor Deposition (MOCVD) technique. To get a lattice matched substrate an Indium Phosphide buffer thin film is deposited onto Si substrate prior to InGaAs growth. The grown films have been investigated by UV-Vis-NIR reflectance spectroscopy. The band gap energy of the grown InGaAs thin films determined to be 0.82 eV from reflectance spectrum and the films are found to have same thickness for growth between 600 °C and 650 °C. Crystalline quality of the grown films has been studied by grazing incidence X-ray diffractometry (GIXRD).

  6. Greatly enhanced flux pinning properties of fluorine-free metal-organic decomposition YBCO films by co-addition of halogens (Cl, Br) and metals (Zr, Sn, Hf)

    NASA Astrophysics Data System (ADS)

    Motoki, Takanori; Ikeda, Shuhei; Nakamura, Shin-ichi; Honda, Genki; Nagaishi, Tatsuoki; Doi, Toshiya; Shimoyama, Jun-ichi

    2018-04-01

    Additive-free YBCO films, as well as those with halogen (X) added, metal (M) added and (X, M) co-added, have been prepared by the fluorine-free metal-organic decomposition method on SrTiO3(100) single crystalline substrates, where X = Cl, Br and M = Zr, Sn, Hf. It was revealed that the addition of both Cl and Br to the starting solution resulted in the generation of oxyhalide, Ba2Cu3O4 X 2, in the YBCO films, and that the oxyhalide was found to promote the bi-axial orientation of the YBCO crystals. By adding a decent amount of Cl or Br, highly textured YBCO films with high J c were reproducibly obtained, even when an impurity metal, M, was co-added, while the addition of M without X did not greatly improve J c owing to the poor bi-axial orientation of the YBCO crystals. Our results suggest that the addition of Br more effectively enhances J c than the addition of Cl. The pinning force density at 40 K in 4.8 T reached ˜55 GN m-3 with the co-addition of (Br, M). This value is much larger than that of the pure YBCO film, reaching ˜17 GN m-3.

  7. Low-temperature MOCVD deposition of Bi2Te3 thin films using Et2BiTeEt as single source precursor

    NASA Astrophysics Data System (ADS)

    Bendt, Georg; Gassa, Sanae; Rieger, Felix; Jooss, Christian; Schulz, Stephan

    2018-05-01

    Et2BiTeEt was used as single source precursor for the deposition of Bi2Te3 thin films on Si(1 0 0) substrates by metal organic chemical vapor deposition (MOCVD) at very low substrate temperatures. Stoichiometric and crystalline Bi2Te3 films were grown at 230 °C, which is approximately 100 °C lower compared to conventional MOCVD processes using one metal organic precursors for each element. The Bi2Te3 films were characterized using scanning electron microscopy, high-resolution transmission electron microscopy and X-ray diffraction. The elemental composition of the films, which was determined by energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy, was found to be strongly dependent of the substrate temperature.

  8. Crystal growth of YBCO coated conductors by TFA MOD method

    NASA Astrophysics Data System (ADS)

    Yoshizumi, M.; Nakanishi, T.; Matsuda, J.; Nakaoka, K.; Sutoh, Y.; Izumi, T.; Shiohara, Y.

    2008-09-01

    The crystal growth mechanism of TFA (trifluoroacetates)-MOD (metal organic deposition) derived YBa 2Cu 3O y has been investigated to understand the process for higher production rates of the conversion process. YBCO films were prepared by TFA-MOD on CeO 2/Gd 2Zr 2O 7/Hastelloy C276 substrates. The growth rates of YBCO derived from Y:Ba:Cu = 1:2:3 and 1:1.5:3 starting solutions were investigated by XRD and TEM analyses. YBCO growth proceeds in two steps of the epitaxial one from the substrate and solid state reaction. The overall growth rate estimated from the residual amounts of BaF 2 with time measured by XRD is proportional to a square root of P(H 2O). The trend was independent of the composition of starting solutions, however, the growth rate obtained from the 1:1.5:3 starting solutions was high as twice as that of 1:2:3, which could not be explained by the composition of BaF 2 included in the precursor films. On the other hand, the growth rate measured from the thickness of the YBCO quenched film at the same process time showed no difference between the samples of 1:2:3 and 1:1.5:3. The epitaxial growth rate of 1:1.5:3 was also the same as the overall growth rate of that, which means there was no solid state reaction to form YBCO after the epitaxial growth. The YBCO growth mechanism was found to be as follows; YBCO crystals nucleate at the surface of the substrate and epitaxially grow into the precursor by layer-by-layer by a manner with trapping unreacted particles. The amounts of YBCO and the unreacted particles trapped in the YBCO film are independent of the composition of the starting solution in this step. Unreacted particles react with each other to form YBCO and pores by solid state reaction as long as there is BaF 2 left in the film. The Ba-poor starting solution gives little BaF 2 left in the film and so the solid state reaction is completed within a short time, resulting in the fast overall growth rate.

  9. Synthesis and characterization of heteroleptic titanium MOCVD precursors for TiO2 thin films.

    PubMed

    Kim, Euk Hyun; Lim, Min Hyuk; Lah, Myoung Soo; Koo, Sang Man

    2018-02-13

    Heteroleptic titanium alkoxides with three different ligands, i.e., [Ti(O i Pr)(X)(Y)] (X = tridentate, Y = bidentate ligands), were synthesized to find efficient metal organic chemical vapor deposition (MOCVD) precursors for TiO 2 thin films. Acetylacetone (acacH) or 2,2,6,6-tetramethyl-3,5-heptanedione (thdH) was employed as a bidentate ligand, while N-methyldiethanolamine (MDEA) was employed as a tridentate ligand. It was expected that the oxygen and moisture susceptibility of titanium alkoxides, as well as their tendency to form oligomers, would be greatly reduced by placing multidentate and bulky ligands around the center Ti atom. The synthesized heteroleptic titanium alkoxides were characterized both physicochemically and crystallographically, and their thermal behaviors were also investigated. [Ti(O i Pr)(MDEA)(thd)] was found to be monomeric and stable against moisture; it also showed good volatility in the temperature window between volatilization and decomposition. This material was used as a single-source precursor during MOCVD to generate TiO 2 thin films on silicon wafers. The high thermal stability of [Ti(O i Pr)(MDEA)(thd)] enabled the fabrication of TiO 2 films over a wide temperature range, with steady growth rates between 500 and 800 °C.

  10. Growth mechanism of GaAs1-xSbx ternary alloy thin film on MOCVD reactor using TMGa, TDMAAs and TDMASb

    NASA Astrophysics Data System (ADS)

    Suhandi, A.; Tayubi, Y. R.; Arifin, P.

    2016-04-01

    Metal Organic Chemical Vapor Deposition (MOCVD) is a method for growing a solid material (in the form of thin films, especially for semiconductor materials) using vapor phase metal organic sources. Studies on the growth mechanism of GaAs1-xSbx ternary alloy thin solid film in the range of miscibility-gap using metal organic sources trimethylgallium (TMGa), trisdimethylaminoarsenic (TDMAAs), and trisdimethylaminoantimony (TDMASb) on MOCVD reactor has been done to understand the physical and chemical processes involved. Knowledge of the processes that occur during alloy formation is very important to determine the couple of growth condition and growth parameters are appropriate for yield high quality GaAs1-xSbx alloy. The mechanism has been studied include decomposition of metal organic sources and chemical reactions that may occur, the incorporation of the alloy elements forming and the contaminants element that are formed in the gown thin film. In this paper presented the results of experimental data on the growth of GaAs1-xSbx alloy using Vertical-MOCVD reactor to demonstrate its potential in growing GaAs1-xSbx alloy in the range of its miscibility gap.

  11. Critical Current Properties in Longitudinal Magnetic Field of YBCO Superconductor with APC

    NASA Astrophysics Data System (ADS)

    Kido, R.; Kiuchi, M.; Otabe, E. S.; Matsushita, T.; Jha, A. K.; Matsumoto, K.

    The critical current density (Jc) properties of the Artificial Pinning Center (APC) introduced YBa2Cu3O7 (YBCO) films in the longitudinal magnetic field were measured. Y2O3 or Y2BaCuO5 (Y211) was introduced as APCs to YBCO, and YBCO films with APC were fabricated on SrTiO3 single crystal substrate. The sizes of Y2O3 and Y211 were 5-10 nm and 10-20 nm, respectively. As a result, Jc enhancement in the longitudinal magnetic field was observed in Y2O3 introduced YBCO films. However, it was not observed in Y211 introduced YBCO films. Therefore, it was considered that Jc properties in the longitudinal magnetic field were affected by introducing of small size APC, and it was necessary that APC does not disturb the current pathway in the superconductor.

  12. MOCVD of aluminium oxide films using aluminium β-diketonates as precursors

    NASA Astrophysics Data System (ADS)

    Devi, A.; Shivashankar, S. A.; Samuelson, A. G.

    2002-06-01

    Deposition of Al203 coatings by CVD is of importance because they are often used as abrading material in cemented carbide cutting tools. The conventionally used CVD process for Al203 involves the corrosive reactant AICl3. In this paper, we report on the thermal characterisation of the metalorganic precursors namely aluminium tris-tetramethyl-heptanedionate [ Al(thd)3] and aluminium tris-acetylacetonate [ Al(acac)3] and their application to the CVD of Al203 films. Crystalline A1203 films were deposited by MOCVD at low temperatures by the pyrolysis of Al(thd)3 and AI(acac)3. The films were deposited on a TiN-coated tungsten carbide (TiN/WC) and Si(100) substrates in the temperature range 500-1100 °C. The as-deposited films were characterised by x-ray diffraction, optical microscopy, scanning and transmission electron microscopy, Auger electron spectroscopy. The observed crystallinity of films grown at low temperatures, their microstructure, and composition may be interpreted in terms of a growth process that involves the melting of the metalorganic precursor on the hot growth surface.

  13. Low energy electron beam processing of YBCO thin films

    NASA Astrophysics Data System (ADS)

    Chromik, Š.; Camerlingo, C.; Sojková, M.; Štrbík, V.; Talacko, M.; Malka, I.; Bar, I.; Bareli, G.; Jung, G.

    2017-02-01

    Effects of low energy 30 keV electron irradiation of superconducting YBa2Cu3O7-δ thin films have been investigated by means of transport and micro-Raman spectroscopy measurements. The critical temperature and the critical current of 200 nm thick films initially increase with increasing fluency of the electron irradiation, reach the maximum at fluency 3 - 4 × 1020 electrons/cm2, and then decrease with further fluency increase. In much thinner films (75 nm), the critical temperature increases while the critical current decreases after low energy electron irradiation with fluencies below 1020 electrons/cm2. The Raman investigations suggest that critical temperature increase in irradiated films is due to healing of broken Cusbnd O chains that results in increased carrier's concentration in superconducting CuO2 planes. Changes in the critical current are controlled by changes in the density of oxygen vacancies acting as effective pinning centers for flux vortices. The effects of low energy electron irradiation of YBCO turned out to result from a subtle balance of many processes involving oxygen removal, both by thermal activation and kick-off processes, and ordering of chains environment by incident electrons.

  14. Growth and characterization of CdS buffer layers by CBD and MOCVD

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Morrone, A.A.; Huang, C.; Li, S.S.

    1999-03-01

    Thin film CdS has been widely used in thin-film photovoltaic devices. The most efficient Cu(In,&hthinsp;Ga)Se{sub 2} (CIGS) solar cells reported to date utilized a thin CdS buffer layer prepared by a reactive solution growth technique known as chemical bath deposition (CBD). Considerable effort has been directed to better understand the role and find a replacement for the CBD CdS process in CIGS-based solar cells. We reported a low temperature ({approximately}150&hthinsp;{degree}C) Metalorganic Chemical Vapor Deposition (MOCVD) CdS thin film buffer layer process for CIGS absorbers. Many prior studies have reported that CBD CdS contains a mixture of crystal structures. Recent investigationsmore » of CBD CdS thin films by ellipsometry suggested a multilayer structure. In this study we compare CdS thin films prepared by CBD and MOCVD and the effects of annealing. TED and XRD are used to characterize the crystal structure, the film microstructure is studied by HRTEM, and the optical properties are studied by Raman and spectrophotometry. All of these characterization techniques reveal superior crystalline film quality for CdS films grown by MOCVD compared to those grown by CBD. Dual Beam Optical Modulation (DBOM) studies showed that the MOCVD and CBD CdS buffer layer processes have nearly the same effect on CIGS absorbers when combined with a cadmium partial electrolyte aqueous dip. {copyright} {ital 1999 American Institute of Physics.}« less

  15. Improved interface growth and enhanced flux pinning in YBCO films deposited on an advanced IBAD-MgO based template

    NASA Astrophysics Data System (ADS)

    Khan, M. Z.; Zhao, Y.; Wu, X.; Malmivirta, M.; Huhtinen, H.; Paturi, P.

    2018-02-01

    The growth mechanism is studied from the flux pinning point of view in small-scale YBa2Cu3O6+x (YBCO) thin films deposited on a polycrystalline hastelloy with advanced IBAD-MgO based buffer layer architecture. When compared the situation with YBCO films grown on single crystal substrates, the most critical issues that affect the suitable defect formation and thus the optimal vortex pinning landscape, have been studied as a function of the growth temperature and the film thickness evolution. We can conclude that the best critical current property in a wide applied magnetic field range is observed in films grown at relatively low temperature and having intermediate thickness. These phenomena are linked to the combination of the improved interface growth, to the film thickness related crystalline relaxation and to the formation of linear array of edge dislocations that forms the low-angle grain boundaries through the entire film thickness and thus improve the vortex pinning properties. Hence, the optimized buffer layer structure proved to be particularly suitable for new coated conductor solutions.

  16. Solid source MOCVD system

    DOEpatents

    Hubert, Brian N.; Wu, Xin Di

    1998-01-01

    A system for MOCVD fabrication of superconducting and non-superconducting oxide films provides a delivery system for the feeding of metalorganic precursors for multi-component chemical vapor deposition. The delivery system can include multiple cartridges containing tightly packed precursor materials. The contents of each cartridge can be ground at a desired rate and fed together with precursor materials from other cartridges to a vaporization zone and then to a reaction zone within a deposition chamber for thin film deposition.

  17. Solid source MOCVD system

    DOEpatents

    Hubert, B.N.; Wu, X.D.

    1998-10-13

    A system for MOCVD fabrication of superconducting and non-superconducting oxide films provides a delivery system for the feeding of metallorganic precursors for multi-component chemical vapor deposition. The delivery system can include multiple cartridges containing tightly packed precursor materials. The contents of each cartridge can be ground at a desired rate and fed together with precursor materials from other cartridges to a vaporization zone and then to a reaction zone within a deposition chamber for thin film deposition. 13 figs.

  18. Fabrication of biaxially oriented YBCO on (001) biaxially oriented yttria-stabilized-zirconia on polycrystalline substrates

    NASA Astrophysics Data System (ADS)

    Arendt, P.; Foltyn, S.; Wu, Xin Di; Townsend, J.; Adams, C.; Hawley, M.; Tiwari, P.; Maley, M.; Willis, J.; Moseley, D.

    Ion-assisted, ion-beam sputter deposition is used to obtain (001) biaxially oriented films of cubic yttria stabilized zirconia (YSZ) on polycrystalline metal substrates. Yttrium barium copper oxide (YBCO) is then heteroepitaxially pulse laser deposited onto the YSZ. Phi scans of the films show the full-width-half maxima of the YSZ (202) and the YBCO (103) reflections to be 14 deg and 10 deg, respectively. Our best dc transport critical current density measurement for the YBCO is 800,000 A/sq cm at 75 K and 0 T. At 75 K, the total dc transport current in a 1 cm wide YBCO film is 23 A.

  19. BaHfO3 artificial pinning centres in TFA-MOD-derived YBCO and GdBCO thin films

    NASA Astrophysics Data System (ADS)

    Erbe, M.; Hänisch, J.; Hühne, R.; Freudenberg, T.; Kirchner, A.; Molina-Luna, L.; Damm, C.; Van Tendeloo, G.; Kaskel, S.; Schultz, L.; Holzapfel, B.

    2015-11-01

    Chemical solution deposition (CSD) is a promising way to realize REBa2Cu3O7-x (REBCO; RE = rare earth (here Y, Gd))-coated conductors with high performance in applied magnetic fields. However, the preparation process contains numerous parameters which need to be tuned to achieve high-quality films. Therefore, we investigated the growth of REBCO thin films containing nanometre-scale BaHfO3 (BHO) particles as pinning centres for magnetic flux lines, with emphasis on the influence of crystallization temperature and substrate on the microstructure and superconductivity. Conductivity, microscopy and x-ray investigations show an enhanced performance of BHO nano-composites in comparison to pristine REBCO. Further, those measurements reveal the superiority of GdBCO to YBCO—e.g. by inductive critical current densities, J c, at self-field and 77 K. YBCO is outperformed by more than 1 MA cm-2 with J c values of up to 5.0 MA cm-2 for 265 nm thick layers of GdBCO(BHO) on lanthanum aluminate. Transport in-field J c measurements demonstrate high pinning force maxima of around 4 GN m-3 for YBCO(BHO) and GdBCO(BHO). However, the irreversibility fields are appreciably higher for GdBCO. The critical temperature was not significantly reduced upon BHO addition to both YBCO and GdBCO, indicating a low tendency for Hf diffusion into the REBCO matrix. Angular-dependent J c measurements show a reduction of the anisotropy in the same order of magnitude for both REBCO compounds. Theoretical models suggest that more than one sort of pinning centre is active in all CSD films.

  20. Micropatterning of TiO2 thin films by MOCVD and study of their growth tendency.

    PubMed

    Hwang, Ki-Hwan; Kang, Byung-Chang; Jung, Duk Young; Kim, Youn Jea; Boo, Jin-Hyo

    2015-03-23

    In this work, we studied the growth tendency of TiO2 thin films deposited on a narrow-stripe area (<10 μm). TiO2 thin films were selectively deposited on OTS patterned Si(100) substrates by MOCVD. The experimental data showed that the film growth tendency was divided into two behaviors above and below a line patterning width of 4 μm. The relationship between the film thickness and the deposited area was obtained as a function of f(x) = a[1 - e((-bx))]c. To find the tendency of the deposition rate of the TiO2 thin films onto the various linewidth areas, the relationship between the thickness of the TiO2 thin film and deposited linewidth was also studied. The thickness of the deposited TiO2 films was measured from the alpha-step profile analyses and cross-sectional SEM images. At the same time, a computer simulation was carried out to reveal the relationship between the TiO2 film thickness and deposited line width. The theoretical results suggest that the mass (velocity) flux in flow direction is directly affected to the film thickness.

  1. Trade-offs of the opto-electrical properties of a-Si:H solar cells based on MOCVD BZO films.

    PubMed

    Chen, Ze; Zhang, Xiao-dan; Liang, Jun-hui; Fang, Jia; Liang, Xue-jiao; Sun, Jian; Zhang, De-kun; Chen, Xin-liang; Huang, Qian; Zhao, Ying

    2015-01-07

    Boron-doped zinc oxide (BZO) films, deposited by metal-organic chemical vapor deposition (MOCVD), have been widely used as front electrodes in thin-film solar cells due to their native pyramidal surface structure, which results in efficient light trapping. This light trapping effect can enhance the short-circuit current density (Jsc) of solar cells. However, nanocracks or voids in the silicon active layer may form when the surface morphology of the BZO is too sharp; this usually leads to degraded electrical properties of the cells, such as open-circuit voltage (Voc) and the fill factor (FF), which in turn decreases efficiency (Eff) [Bailat et al., Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on. IEEE, 2006, vol. 2, pp. 1533-1536]. In this paper, an etching and coating method was proposed to modify the sharp "pyramids" on the surface of the BZO films. As a result, an evident enhancement was achieved for these modified, BZO-based cells' Voc, FF, and Eff, although the Jsc exhibited a small decrease. In order to increase the Jsc and maintain the improved electrical properties (Voc, FF) of the cell, a thin BZO coating, deposited by MOCVD, was introduced to coat the sputtering-treated BZO film. Finally, we optimized the trade-off among the Voc, FF, and Jsc, that is, we identified a regime with an increase of the Jsc as well as a further improvement of the other electrical properties.

  2. Effect of growth parameters on crystallinity and properties of ZnO films grown by plasma assisted MOCVD

    NASA Astrophysics Data System (ADS)

    Losurdo, M.; Giangregorio, M. M.; Sacchetti, A.; Capezzuto, P.; Bruno, G.; Malandrino, G.; Fragalà, I. L.

    2007-07-01

    Thin films of ZnO have been grown by plasma assisted metal-organic chemical vapour deposition (PA-MOCVD) using a 13.56 MHz O 2 plasma and the Zn(TTA)•tmed (HTTA=2-thenoyltrifluoroacetone, TMED=N,N,N',N'-tetramethylethylendiamine) precursor. The effects of growth parameters such as the plasma activation, the substrate, the surface temperature, and the ratio of fluxes of precursors on the structure, morphology, and optical and electrical properties of ZnO thin films have been studied. Under a very low plasma power of 20 W, c-axis oriented hexagonal ZnO thin films are grown on hexagonal sapphire (0001), cubic Si(001) and amorphous quartz substrates. The substrate temperature mainly controls grain size.

  3. Microstructure study of ZnO thin films on Si substrate grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Huang, Jingyun; Ye, Zhizhen; Lu, Huanming; Wang, Lei; Zhao, Binghui; Li, Xianhang

    2007-08-01

    The microstructure of zinc oxide thin films on silicon substrates grown by metalorganic chemical vapour deposition (MOCVD) was characterized. The cross-sectional bright-field transmission electron microscopy (TEM) image showed that small ZnO columnar grains were embedded into large columnar grains, and the selected-area electron diffraction pattern showed that the ZnO/Si thin films were nearly c-axis oriented. The deviation angle along the ZnO (0 0 0 1) direction with respect to the growth direction of Si (1 0 0) was no more than 5°. The [0 0 0 1]-tilt grain boundaries in ZnO/Si thin films were investigated symmetrically by plan-view high resolution TEM. The boundaries can be classified into three types: low-angle boundaries described as an irregular array of edge dislocations, boundaries of near 30° angle with (1\\,0\\,\\bar{1}\\,0) facet structures and large-angle boundaries with symmetric structure which could be explained by a low Σ coincident site lattice structure mode. The research was useful to us for finding optimized growth conditions to improve ZnO/Si thin film quality.

  4. RF plasma MOCVD of Y2O3 thin films: Effect of RF self-bias on the substrates during deposition

    NASA Astrophysics Data System (ADS)

    Chopade, S. S.; Barve, S. A.; Thulasi Raman, K. H.; Chand, N.; Deo, M. N.; Biswas, A.; Rai, Sanjay; Lodha, G. S.; Rao, G. M.; Patil, D. S.

    2013-11-01

    Yttrium oxide (Y2O3) thin films have been deposited by radio frequency plasma assisted metal organic chemical vapor deposition (MOCVD) process using (2,2,6,6-tetramethyl-3,5-heptanedionate) yttrium (commonly known as Y(thd)3) precursor in a plasma of argon and oxygen gases at a substrate temperature of 350 °C. The films have been deposited under influence of varying RF self-bias (-50 V to -175 V) on silicon, quartz, stainless steel and tantalum substrates. The deposited coatings are characterized by glancing angle X-ray diffraction (GIXRD), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry and scanning electron microscopy (SEM). GIXRD and FTIR results indicate deposition of Y2O3 (BCC structure) in all cases. However, XPS results indicate nonstoichiometric cubic phase deposition on the surface of deposited films. The degree of nonstoichiometry varies with bias during deposition. Ellipsometry results indicate that the refractive index for the deposited films is varying from 1.70 to 1.83 that is typical for Y2O3. All films are transparent in the investigated wavelength range 300-1200 nm. SEM results indicate that the microstructure of the films is changing with applied bias. Results indicate that it is possible to deposit single phase cubic Y2O3 thin films at low substrate temperature by RF plasma MOCVD process. RF self-bias that decides about the energy of impinging ions on the substrates plays an important role in controlling the texture of deposited Y2O3 films on the substrates. Results indicate that to control the structure of films and its texture, it is important to control the bias on the substrate during deposition. The films deposited at high bias level show degradation in the crystallinity and reduction of thickness.

  5. Friction and wear behavior of nitrogen-doped ZnO thin films deposited via MOCVD under dry contact

    DOE PAGES

    Mbamara, U. S.; Olofinjana, B.; Ajayi, O. O.; ...

    2016-02-01

    Most researches on doped ZnO thin films are tilted toward their applications in optoelectronics and semiconductor devices. Research on their tribological properties is still unfolding. In this work, nitrogen-doped ZnO thin films were deposited on 304 L stainless steel substrate from a combination of zinc acetate and ammonium acetate precursor by MOCVD technique. Compositional and structural studies of the films were done using Rutherford Backscattering Spectroscopy (RBS) and X-ray Diffraction (XRD). The frictional behavior of the thin film coatings was evaluated using a ball-on-flat configuration in reciprocating sliding under dry contact condition. After friction test, the flat and ball counter-facemore » surfaces were examined to assess the wear dimension and failure mechanism. In conclusion, both friction behavior and wear (in the ball counter-face) were observed to be dependent on the crystallinity and thickness of the thin film coatings.« less

  6. Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model.

    PubMed

    Li, Jian; Fei, Ze-Yuan; Xu, Yi-Feng; Wang, Jie; Fan, Bing-Feng; Ma, Xue-Jin; Wang, Gang

    2018-02-01

    Metal-organic chemical vapour deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes. Film uniformity is an important index to measure equipment performance and chip processes. This paper introduces a method to improve the quality of thin films by optimizing the rotation speed of different substrates of a model consisting of a planetary with seven 6-inch wafers for the planetary GaN-MOCVD. A numerical solution to the transient state at low pressure is obtained using computational fluid dynamics. To evaluate the role of the different zone speeds on the growth uniformity, single factor analysis is introduced. The results show that the growth rate and uniformity are strongly related to the rotational speed. Next, a response surface model was constructed by using the variables and the corresponding simulation results. The optimized combination of the matching of different speeds is also proposed as a useful reference for applications in industry, obtained by a response surface model and genetic algorithm with a balance between the growth rate and the growth uniformity. This method can save time, and the optimization can obtain the most uniform and highest thin film quality.

  7. Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

    NASA Astrophysics Data System (ADS)

    Li, Jian; Fei, Ze-yuan; Xu, Yi-feng; Wang, Jie; Fan, Bing-feng; Ma, Xue-jin; Wang, Gang

    2018-02-01

    Metal-organic chemical vapour deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes. Film uniformity is an important index to measure equipment performance and chip processes. This paper introduces a method to improve the quality of thin films by optimizing the rotation speed of different substrates of a model consisting of a planetary with seven 6-inch wafers for the planetary GaN-MOCVD. A numerical solution to the transient state at low pressure is obtained using computational fluid dynamics. To evaluate the role of the different zone speeds on the growth uniformity, single factor analysis is introduced. The results show that the growth rate and uniformity are strongly related to the rotational speed. Next, a response surface model was constructed by using the variables and the corresponding simulation results. The optimized combination of the matching of different speeds is also proposed as a useful reference for applications in industry, obtained by a response surface model and genetic algorithm with a balance between the growth rate and the growth uniformity. This method can save time, and the optimization can obtain the most uniform and highest thin film quality.

  8. Grain growth simulation of [001] textured YBCO films grown on (001) substrates with large lattice misfit: Prediction of misorientations of the remaining boundaries

    NASA Astrophysics Data System (ADS)

    Tsai, Jack W. H.; Ling, Shiun; Rodriguez, Julio C.; Mustapha, Zarina; Chan, Siu-Wai

    2001-04-01

    We study the effects of (1) the variation of grain boundary energy with misorientation and (2) the large lattice misfit (>3%) between the films and substrates on grain growth in films by method of Monte Carlo simulations. The results from the grain growth simulation in YBa2Cu3O7-x (YBCO) films was found to concur with previous experimental observation of preferred grain orientations for YBCO films deposited on various substrates such as (001) magnesium oxide (MgO) and (001) yttria stabilized zirconia (YSZ). The simulation has helped us to identify three factors influencing the competition of these [001] tilt boundaries. They are: (1) the relative depths of local minima in the boundary energy vs. misorientation curve, (2) the number of combinations of coincidence epitaxy (CE) orientations contributing to the exact misorientation for each of the high-angle-but-low-energy (HABLE) boundaries, and (3) the number of combinations of CE orientations within the angular ranges bracketing each of the exact HABLE boundaries. Hence, these factors can be applied to clarify the origin of special misorientations observed experimentally.

  9. Flux pinning in yttrium barium copper oxide coated conductors

    NASA Astrophysics Data System (ADS)

    Chen, Zhijun

    High quality high-temperature-superconducting YBa2Cu 3O7-x (YBCO) films for industrial applications demand very high critical current densities Jc, which can only be achieved by strong three-dimensional (3D) pinning with deliberately introduced nano-precipitates. The purpose of this thesis is to provide an in-depth understanding of the 3D pinning in such YBCO films. In pulsed laser deposition (PLD) prepared YBCO films, a high density of anti-phase boundaries and stacking faults were found to be effective pinning defects for improving Jc in small fields. However, their failure to improve Jc at high fields shows that such naturally generated defects are not strong 3D pinning centers. A demonstration of strong 3D pinning was found in a metal organic chemical vapor deposition (MOCVD) grown YBCO coated conductor (CC) with a high density of (Y,Sm)2O3 nano-precipitates. We observed a significantly enhanced irreversibility field Hirr which, like other superconducting properties was independent of thickness, due to strong vortex-pin interactions. The advantage of 3D pinning was further illustrated by a bi-layer metalorganic deposition (MOD) grown YBCO CC with different 3D pinning structures in each layer. The Jc anisotropy of the bilayer was found to be the thickness-weighted sum of the anisotropy of the two individual layers, demonstrating an applicable way to tune the Jcanisotropy. Moreover, extensive low temperature and high magnetic field evaluations performed on an MOCVD CC with dense 3D (Y,Sm) 2O3 nano-precipitate pinning centers showed that its strong vortex pinning at 77 K correlated well to strong performance at 4.2 K too. YBCO films with quantitatively controlled artificial Y2O 3 nano-precipitates were also grown by PLD, and characterized over wide temperature and field ranges. Their Jc was found to be determined by the vortex pinning mediated by thermal fluctuation effects. In weak thermal-fluctuation situations Jc increased with decreasing effective precipitate

  10. Crystalline orientation engineering and charge transport in thin film YBa(2)Cu(3)O(7-x) superconducting surface-coated conductors

    NASA Astrophysics Data System (ADS)

    Chudzik, Michael Patrick

    The weak-link behavior of grain boundaries in polycrystalline high-T c superconductors adversely affects the current density in these materials. The development of wire technology based on polycrystalline high-Tc materials requires understanding and controlling the development of low-angle grain boundaries in these conductors. The research goal is to comprehensively examine the methodology in fabrication and characterization to understand the structure-transport correlation in YBa2Cu3O 7-x (YBCO) surface-coated conductors. High current density YBCO coated conductors were fabricated and characterized as candidates for second generation high-Tc wire technology. Critical current densities (Jc) greater than 1 x 106 A/cm2 at 77 K and zero magnetic field were obtained using thin films epitaxially grown by metalorganic chemical vapor deposition (MOCVD) and pulsed laser deposition (PLD) on oriented buffer layers. The biaxially textured oxide buffer layers were deposited by ion-beam-assisted deposition (IBAD). The transport properties of coated conductors were evaluated in high magnetic fields for intrinsic and extrinsic flux vortex pinning effects for improved high-field properties. Transport Jc's of these coated conductors at 7 tesla (77 K) were measured at values greater than 105 A/cm 2 with the magnetic field perpendicular to the YBCO c-axis (B⊥ c) in both MOCVD and PLD derived conductors. The Jc's in B || c orientation fell an order of magnitude lower at 7 tesla to values near 10 4 A/cm2 due to decreased intrinsic flux pinning. The critical current densities as a function of grain boundary misorientation were found to deviate from the general trend determined for single grain boundary junctions, due to the mosaic structure, which allows meandering current flow. Extensive parametric investigations of relevant thin film growth techniques were utilized to establish growth-property relationships that led to optimized fabrication of high-Tc conductors. The work contained

  11. Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

    PubMed Central

    Fei, Ze-yuan; Xu, Yi-feng; Wang, Jie; Fan, Bing-feng; Ma, Xue-jin; Wang, Gang

    2018-01-01

    Metal-organic chemical vapour deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes. Film uniformity is an important index to measure equipment performance and chip processes. This paper introduces a method to improve the quality of thin films by optimizing the rotation speed of different substrates of a model consisting of a planetary with seven 6-inch wafers for the planetary GaN-MOCVD. A numerical solution to the transient state at low pressure is obtained using computational fluid dynamics. To evaluate the role of the different zone speeds on the growth uniformity, single factor analysis is introduced. The results show that the growth rate and uniformity are strongly related to the rotational speed. Next, a response surface model was constructed by using the variables and the corresponding simulation results. The optimized combination of the matching of different speeds is also proposed as a useful reference for applications in industry, obtained by a response surface model and genetic algorithm with a balance between the growth rate and the growth uniformity. This method can save time, and the optimization can obtain the most uniform and highest thin film quality. PMID:29515883

  12. Effect of the microscopic correlated-pinning landscape on the macroscopic critical current density in YBCO films

    NASA Astrophysics Data System (ADS)

    Ghigo, G.; Chiodoni, A.; Gerbaldo, R.; Gozzelino, L.; Laviano, F.; Mezzetti, E.; Minetti, B.; Camerlingo, C.

    This paper deals with the mechanisms controlling the critical current density vs. field behavior in YBCO films. We base our analysis on a suitable model concerning the existence of a network of intergrain Josephson junctions whose length is modulated by defects. Irradiation with 0.25 GeV Au ions provide a useful tool to check the texture of the sample, in particular to give a gauge length reference to separate “weak” links and high- J c links.

  13. Fast growth rate of epitaxial β-Ga2O3 by close coupled showerhead MOCVD

    NASA Astrophysics Data System (ADS)

    Alema, Fikadu; Hertog, Brian; Osinsky, Andrei; Mukhopadhyay, Partha; Toporkov, Mykyta; Schoenfeld, Winston V.

    2017-10-01

    We report on the growth of epitaxial β-Ga2O3 thin films on c-plane sapphire substrates using a close coupled showerhead MOCVD reactor. Ga(DPM)3 (DPM = dipivaloylmethanate), triethylgallium (TEGa) and trimethylgallium (TMGa) metal organic (MO) precursors were used as Ga sources and molecular oxygen was used for oxidation. Films grown from each of the Ga sources had high growth rates, with up to 10 μm/hr achieved using a TMGa precursor at a substrate temperature of 900 °C. As confirmed by X-ray diffraction, the films grown from each of the Ga sources were the monoclinic (2 bar 0 1) oriented β-Ga2O3 phase. The optical bandgap of the films was also estimated to be ∼4.9 eV. The fast growth rate of β-Ga2O3 thin films obtained using various Ga-precursors has been achieved due to the close couple showerhead design of the MOCVD reactor as well as the separate injection of oxygen and MO precursors, preventing the premature oxidation of the MO sources. These results suggest a pathway to overcoming the long-standing challenge of realizing fast growth rates for Ga2O3 using the MOCVD method.

  14. Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

    NASA Astrophysics Data System (ADS)

    Al Balushi, Zakaria Y.

    Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth

  15. In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

    NASA Technical Reports Server (NTRS)

    Singh, R.; Sinha, S.; Hsu, N. J.; Thakur, R. P. S.; Chou, P.; Kumar, A.; Narayan, J.

    1990-01-01

    In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectric having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writting capability, complex device structures like three-terminal hybrid semiconductors/superconductors transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray defraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

  16. In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

    NASA Technical Reports Server (NTRS)

    Singh, R.; Sinha, S.; Hsu, N. J.; Thakur, R. P. S.; Chou, P.; Kumar, A.; Narayan, J.

    1991-01-01

    In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectrics having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writing capability, complex device structures like three terminal hybrid semiconductor/superconductor transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray deffraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

  17. YBCO High-Temperature Superconducting Filters on M-Plane Sapphire Substrates

    NASA Technical Reports Server (NTRS)

    Sabataitis, J. C.; Mueller, C. H.; Miranda, F. A.; Warner, J.; Bhasin, K. B.

    1996-01-01

    Since the discovery of High Temperature Superconductors (HTS) in 1986, microwave circuits have been demonstrated using HTS films on various substrates. These HTS-based circuits have proven to operate with less power loss than their metallic film counterparts at 77 K. This translates into smaller and lighter microwave circuits for space communication systems such as multiplexer filter banks. High quality HTS films have conventionally been deposited on lanthanum aluminate (LaAlO3) substrates. However, LaAlO3 has a relative dielectric constant (epsilon(sub r)) of 24. With a epsilon(sub r) approx. 9.4-11.6, sapphire (Al2O3) would be a preferable substrate for the fabrication of HTS-based components since the lower dielectric constant would permit wider microstrip lines to be used in filter design, since the lower dielectric constant would permit wider microstrip lines to be used for a given characteristic impedance (Z(sub 0)), thus lowering the insertion losses and increasing the power handling capabilities of the devices. We report on the fabrication and characterization of YBa2Cu3O(7-delta) (YBCO) on M-plane sapphire bandpass filters at 4.0 GHz. For a YBCO 'hairpin' filter, a minimum insertion loss of 0.5 dB was measured at 77 K as compared with 1.4 dB for its gold counterpart. In an 'edge-coupled' configuration, the insertion loss went down from 0.9 dB for the gold film to 0.8 dB for the YBCO film at the same temperature.

  18. YBa2Cu3O7 thin films on nanocrystalline diamond films for HTSC bolometer

    NASA Technical Reports Server (NTRS)

    Cui, G.; Beetz, C. P., Jr.; Boerstler, R.; Steinbeck, J.

    1993-01-01

    Superconducting YBa2Cu3O(7-x) films on nanocrystalline diamond thin films have been fabricated. A composite buffer layer system consisting of diamond/Si3N4/YSZ/YBCO was explored for this purpose. The as-deposited YBCO films were superconducting with Tc of about 84 K and a relatively narrow transition width of about 8 K. SEM cross sections of the films showed very sharp interfaces between diamond/Si3N4 and between Si3N4/YSZ. The deposited YBCO film had a surface roughness of about 1000 A, which is suitable for high-temperature superconductive (HTSC) bolometer fabrication. It was also found that preannealing of the nanocrystalline diamond thin films at high temperature was very important for obtaining high-quality YBCO films.

  19. Synthesis, structure, vapour pressure and deposition of ZnO thin film by plasma assisted MOCVD technique using a novel precursor bis[(pentylnitrilomethylidine) (pentylnitrilomethylidine-μ-phenalato)]dizinc(II)

    NASA Astrophysics Data System (ADS)

    Chandrakala, C.; Sravanthi, P.; Raj Bharath, S.; Arockiasamy, S.; George Johnson, M.; Nagaraja, K. S.; Jeyaraj, B.

    2017-02-01

    A novel binuclear zinc schiff's base complex bis[(pentylnitrilomethylidine)(pentylnitrilomethylidine-μ-phenalato)]dizinc(II) (hereafter referred as ZSP) was prepared and used as a precursor for the deposition of ZnO thin film by MOCVD. The dynamic TG run of ZSP showed sufficient volatility and good thermal stability. The temperature dependence of vapour pressure measured by transpiration technique yielded a value of 55.8 ± 2.3 kJ mol-1 for the enthalpy of sublimation (ΔH°sub) in the temperature range of 423-503 K. The crystal structure of ZSP was solved by single crystal XRD which exhibits triclinic crystal system with the space group of Pī. The molecular mass of ZSP was determined by mass spectrometry which yielded the m/z value of 891 and 445 Da corresponding to its dimeric as well as monomeric form. The complex ZSP was further characterized by FT-IR and NMR. The demonstration of ZnO thin film deposition was carried out by using plasma assisted MOCVD. The thin film XRD confirmed the highly oriented (002) ZnO thin films on Si(100) substrate. The uniformity and composition of the thin film were analyzed by SEM/EDX. The band gap of ZnO thin film measurement indicated the blue shift with the value of 3.79 eV.

  20. Quantitative magneto-optical analysis of the role of finite temperatures on the critical state in YBCO thin films

    NASA Astrophysics Data System (ADS)

    Albrecht, Joachim; Brück, Sebastian; Stahl, Claudia; Ruoß, Stephen

    2016-11-01

    We use quantitative magneto-optical microscopy to investigate the influence of finite temperatures on the critical state of thin YBCO films. In particular, temperature and time dependence of supercurrents in inhomogeneous and anisotropic films are analyzed to extract the role of temperature on the supercurrents themselves and the influence of thermally activated relaxation. We find that inhomogeneities and anisotropies of the current density distribution correspond to a different temperature dependence of local supercurrents. In addition, the thermally activated decay of supercurrents can be used to extract local vortex pinning energies. With these results the modification of vortex pinning introduced by substrate structures is studied. In summary the local investigation of supercurrent densities allows the full description of the vortex pinning landscape with respect to pinning forces and energies in superconducting films with complex properties under the influence of finite temperatures.

  1. MOCVD of Bi2Te3 and Sb2Te3 on GaAs substrates for thin-film thermoelectric applications.

    PubMed

    Kim, Jeong-Hun; Jung, Yong-Chul; Suh, Sang-Hee; Kim, Jin-Sang

    2006-11-01

    Metal organic chemical vapour deposition (MOCVD) has been investigated for growth of Bi2Te3 and Sb2Te3 films on (001) GaAs substrates using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. The surface morphologies of Bi2Te3 and Sb2Te3 films were strongly dependent on the deposition temperatures as it varies from a step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration over the 240 K in Bi2Te3 films. The high Seebeck coefficient (of -160 microVK(-1) for Bi2Te3 and +110 microVK(-1) for Sb2Te3 films, respectively) and good surface morphologies of these materials are promising for the fabrication of a few nm thick periodic Bi2Te3/Sb2Te3 super lattice structures for thin film thermoelectric device applications.

  2. The Effects of Grain Boundaries on the Current Transport Properties in YBCO-Coated Conductors

    NASA Astrophysics Data System (ADS)

    Yang, Chao; Xia, Yudong; Xue, Yan; Zhang, Fei; Tao, Bowan; Xiong, Jie

    2015-10-01

    We report a detailed study of the grain orientations and grain boundary (GB) networks in Y2O3 films grown on Ni-5 at.%W substrates. Electron back scatter diffraction (EBSD) exhibited different GB misorientation angle distributions, strongly decided by Y2O3 films with different textures. The subsequent yttria-stabilized zirconia (YSZ) barrier and CeO2 cap layer were deposited on Y2O3 layers by radio frequency sputtering, and YBa2Cu3O7-δ (YBCO) films were deposited by pulsed laser deposition. For explicating the effects of the grain boundaries on the current carry capacity of YBCO films, a percolation model was proposed to calculate the critical current density ( J c) which depended on different GB misorientation angle distributions. The significantly higher J c for the sample with sharper texture is believed to be attributed to improved GB misorientation angle distributions.

  3. Polycrystalline Superconducting Thin Films: Texture Control and Critical Current Density

    NASA Astrophysics Data System (ADS)

    Yang, Feng

    1995-01-01

    The growth processes of polycrystalline rm YBa_2CU_3O_{7-X} (YBCO) and yttria-stabilized-zirconia (YSZ) thin films have been developed. The effectiveness of YSZ buffer layers on suppression of the reaction between YBCO thin films and metallic substrates was carefully studied. Grown on the chemically inert surfaces of YSZ buffer layers, YBCO thin films possessed good quality of c-axis alignment with the c axis parallel to the substrate normal, but without any preferred in-plane orientations. This leads to the existence of a large percentage of the high-angle grain boundaries in the YBCO films. The critical current densities (rm J_{c}'s) found in these films were much lower than those in single crystal YBCO thin films, which was the consequence of the weak -link effect of the high-angle grain boundaries in these films. It became clear that the in-plane alignment is vital for achieving high rm J_{c }s in polycrystalline YBCO thin films. To induce the in-plane alignment, ion beam-assisted deposition (IBAD) technique was integrated into the conventional pulsed laser deposition process for the growth of the YSZ buffer layers. It was demonstrated that using IBAD the in-plane orientations of the YSZ grains could be controlled within a certain range of a common direction. This ion -bombardment induced in-plane texturing was explained using the anisotropic sputtering yield theory. Our observations and analyses have provided valuable information on the optimization of the IBAD process, and shed light on the texturing mechanism in YSZ. With the in-plane aligned YSZ buffer layers, YBCO thin films grown on metallic substrates showed improved rm J_{c}s. It was found that the in-plane alignment of YSZ and that of YBCO were closely related. A direct correlation was revealed between the rm J_{c} value and the degree of the in-plane alignment for the YBCO thin films. To explain this correlation, a numerical model was applied to multi-grain superconducting paths with different

  4. Microwave absorption studies on high-T sub c superconductors and related materials 7--ESR of DPPH coated on a thin BiSrCaCuO film fabricated on MgO(100) substrate

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sugawara, K.; Sugimoto, T.; Shiohara, Y.

    1992-05-10

    In this paper, ESR of DPPH coated on a Bi-Sr-Ca-Cu-O (BSCCO) film (350 {Angstrom} thick) fabricated on MgO(100) substrate by MOCVD is studied. Temperature dependence of the ESR peak-to-peak linewidth, {Delta}H{sub pp}, and the effect of applied magnetic field on {Delta}H{sub pp} are below about 100 K. The results are compared with those of ESR of DPPH coated on ceramic Y-Ba-Cu-O samples (powder and bulk) made by the MPMG method. The DPPH ESR for the BSCCO film reveals that {Delta}H{sub pp} was independent of applied magnetic field up to about 9 kG. In addition, no similarity between the temperature dependencemore » of the excess ESR linewidth of the DPPH and that of critical current density was found for the BSCCO film. These results for the BSCCO film are different from those for the MPMG YBCO samples.« less

  5. YBCO film deposition on very large areas up to 20 × 20 cm2

    NASA Astrophysics Data System (ADS)

    Kinder, H.; Berberich, P.; Prusseit, W.; Rieder-Zecha, S.; Semerad, R.; Utz, B.

    1997-08-01

    In the last decade we have developed thermal reactive co-evaporation as a technique to produce high quality YBCO and other oxide films of very large size up to 9 inches in diameter. This was achieved by intermittent deposition and reaction with oxygen using a heater which rotates the substrate in and out of an oxygen pocket. Even larger substrates, e. g. coated conductors, cannot be rotated. Therefore we have recently developed a new setup where the substrate is held fixed, and the oxygen pocket is set in linear reciprocation. This technique allows simultaneous deposition on a square of 20×20 cm 2. Moreover, we have developed an instant refill mechanism for the thermal boats, and stable rate control by atomic absorption spectroscopy (AAS), in order to obtain a continuous process suitable for small scale mass production.

  6. Buffer layers for high-Tc thin films on sapphire

    NASA Technical Reports Server (NTRS)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  7. GaN epitaxial layers grown on multilayer graphene by MOCVD

    NASA Astrophysics Data System (ADS)

    Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe

    2018-04-01

    In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by using metal-organic chemical vapor deposition (MOCVD). Highly crystalline orientations of the GaN films were confirmed through electron backscatter diffraction (EBSD). An epitaxial relationship between GaN films and MLG is unambiguously established by transmission electron microscope (TEM) analysis. The Raman spectra was used to analyze the internal stress of GaN films, and the spectrum shows residual tensile stress in the GaN films. Moreover, the results of the TEM analysis and Raman spectra indicate that the high quality of the MLG substrate is maintained even after the growth of the GaN film. This high-quality MLG makes it possible to easily remove epitaxial layers from the supporting substrate by micro-mechanical exfoliation technology. This work can aid in the development of transferable devices using GaN films.

  8. Optimization of GaN thin films via MOCVD

    NASA Technical Reports Server (NTRS)

    Dickens, Corey; Wilson, Sylvia L.

    1995-01-01

    A unique characteristic of every semiconductor is the amount of energy required to break an electron bond in the lowest band of allowed states, the valence band. The energy necessary to set an electron free and allow it to conduct in the material is termed the energy gap (Eg). Semiconductors with wide bandgap energies have been shown to possess properties for high power, high temperature, radiation resistance damage, and short wavelength optoelectronic applications. Gallium nitride, which has a wide gap of 3.39 eV, is a material that has demonstrated these characteristics. Various growth conditions are being investigated for quality gallium nitride heteroepitaxy growth via the technique of low pressure metal organic chemical vapor deposition (MOCVD) that can be used for device development.

  9. MOCVD Growth and Characterization of n-type Zinc Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Ben-Yaacov, Tammy

    , and we investigate the n-ZnO/p-GaN interface. We show that ZnO has potential as an effective p-contact for these devices, and determine properties that still need improvement in order for ZnO to compete with other contact materials. We also compare the device performance to metal-contacted devices. In summary, this thesis describes the growth of ZnO(0001) films by MOCVD, the progress in developing ZnO material with excellent surface morphology, high crystal quality, and controllable n-type doping, as well as its application to GaN-based optoelectronic devices as a p-contact material.

  10. Trapped Field Characteristics of Stacked YBCO Thin Plates for Compact NMR Magnets: Spatial Field Distribution and Temporal Stability

    PubMed Central

    Hahn, Seungyong; Kim, Seok Beom; Ahn, Min Cheol; Voccio, John; Bascuñán, Juan; Iwasa, Yukikazu

    2010-01-01

    This paper presents experimental and analytical results of trapped field characteristics of a stack of square YBCO thin film plates for compact NMR magnets. Each YBCO plate, 40 mm × 40 mm × 0.08 mm, has a 25-mm diameter hole at its center. A total of 500 stacked plates were used to build a 40-mm long magnet. Its trapped field, in a bath of liquid nitrogen, was measured for spatial field distribution and temporal stability. Comparison of measured and analytical results is presented: the effects on trapped field characteristics of the unsaturated nickel substrate and the non-uniform current distribution in the YBCO plate are discussed. PMID:20585463

  11. Isotropic enhancement in the critical current density of YBCO thin films incorporating nanoscale Y2BaCuO5 inclusions

    NASA Astrophysics Data System (ADS)

    Jha, Alok K.; Matsumoto, Kaname; Horide, Tomoya; Saini, Shrikant; Mele, Paolo; Ichinose, Ataru; Yoshida, Yutaka; Awaji, Satoshi

    2017-09-01

    The effect of incorporation of nanoscale Y2BaCuO5 (Y211) inclusions on the vortex pinning properties of YBa2Cu3O7-δ (YBCO or Y123) superconducting thin films is investigated in detail on the basis of variation of critical current density (JC) with applied magnetic field and also with the orientation of the applied magnetic field at two different temperatures: 77 K and 65 K. Surface modified target approach is employed to incorporate nanoscale Y211 inclusions into the superconducting YBCO matrix. The efficiency of Y211 nanoinclusions in reducing the angular anisotropy of critical current density is found to be significant. The observed angular dependence of the critical current density is discussed on the basis of mutually occupied volume by a vortex and spherical and/or planar defect. A dip in JC near the ab-plane is also observed which has been analyzed on the basis of variation of pinning potential corresponding to a spherical (3-D) or planar (2-D) pinning center and has been attributed to a reduced interaction volume of the vortices with a pinning center and competing nature of the potentials due to spherical and planar defects.

  12. Inverse polarity of the resistive switching effect and strong inhomogeneity in nanoscale YBCO-metal contacts

    NASA Astrophysics Data System (ADS)

    Truchly, M.; Plecenik, T.; Zhitlukhina, E.; Belogolovskii, M.; Dvoranova, M.; Kus, P.; Plecenik, A.

    2016-11-01

    We have studied a bipolar resistive switching phenomenon in c-axis oriented normal-state YBa2Cu3O7-c (YBCO) thin films at room temperature by scanning spreading resistance microscopy (SSRM) and scanning tunneling microscopy (STM) techniques. The most striking experimental finding has been the opposite (in contrast to the previous room and low-temperature data for planar metal counter-electrode-YBCO bilayers) voltage-bias polarity of the switching effect in all SSRM and a number of STM measurements. We have assumed that the hysteretic phenomena in current-voltage characteristics of YBCO-based contacts can be explained by migration of oxygen-vacancy defects and, as a result, by the formation or dissolution of more or less conductive regions near the metal-YBCO interface. To support our interpretation of the macroscopic resistive switching phenomenon, a minimalist model that describes radical modifications of the oxygen-vacancy effective charge in terms of a charge-wind effect was proposed. It was shown theoretically that due to the momentum exchange between current carriers (holes in the YBCO compound) and activated oxygen ions, the direction in which oxygen vacancies are moving is defined by the balance between the direct electrostatic force on them and that caused by the current-carrier flow.

  13. MOCVD (Ba{sub x}Sr{sub 1-x})Ti{sub 1+y}O{sub 3+z} (BST) thin films for high frequency tunable devices.

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Baumann, P. K.; Kaufman, D. Y.; Im, J.

    2001-01-01

    We have investigated the structural and electrical characteristics of (Ba{sub x}Sr{sub 1-x})Ti{sub 1+y}O{sub 3+z} (BST) thin films synthesized at 650{sup o}C on Pt/SiO{sub 2}/Si substrates using a large area, vertical metalorganic chemical vapor deposition (MOCVD) reactor equipped with a liquid delivery system. Films with a Ba/Sr ratio of 70/30 were studied, as determined using X-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). A substantial reduction of the dielectric loss was achieved when annealing the entire capacitor structure in air at 700{sup o}C. Dielectric tunability as high as 2.3:1 was measured for BST capacitors with the currently optimized processing conditions.

  14. Generating mixed morphology BaZrO3 artificial pinning centers for strong and isotropic pinning in BaZrO3-Y2O3 double-doped YBCO thin films

    NASA Astrophysics Data System (ADS)

    Chen, Shihong; Sebastian, Mary Ann; Gautam, Bibek; Wilt, Jamie; Chen, Yanbin; Sun, Lei; Xing, Zhongwen; Haugan, Timothy; Wu, Judy

    2017-12-01

    High concentration artificial pinning centers (APCs), such as BaZrO3 nanorods (BZO 1D APCs) aligned along the c-axis of the high temperature superconductor YBa2Cu3O7 (YBCO) can provide strong pinning of magnetic vortices and are desirable for applications in high magnetic fields. Unfortunately, in YBCO films with single-doping (SD) of BZO 1D APCs, a monotonic decreasing superconducting T c and critical current density J c(H) with BZO doping has been observed due to strain field overlap at high-concentration perfectly c-axis aligned BZO 1D APCs. In order to resolve this issue, double-doping (DD) of 2-6 vol% BZO 1D APCs and 3.0 vol% Y2O3 nanoparticles (Y2O3-NPs) in YBCO films has been explored to promote BZO-NR orientation misalignment from the c-axis. Remarkably, a monotonic increasing J c(H) with BZO 1D APCs concentration has been obtained in the BZO DD samples. Such a microstructure change is evidenced in the much smaller c-lattice parameter expansion of 0.103% in the DD samples as opposed to 0.511% in the SD counterparts and reduced c-axis alignment of the BZO 1D APCs as revealed in TEM. This yields a mixed 1D + 2D + 3D APC morphology and enhanced isotropic pinning with respect to the orientation of the H-field in the BZO DD samples.

  15. High trapped fields in bulk YBCO superconductors

    NASA Astrophysics Data System (ADS)

    Fuchs, Günter; Gruss, Stefan; Krabbes, Gernot; Schätzle, Peter; Verges, Peter; Müller, Karl-Hartmut; Fink, Jörg; Schultz, Ludwig

    The trapped field properties of bulk melt-textured YBCO material were investigated at different temperatures. In the temperature range of liquid nitrogen, maximum trapped fields of 1.1 T were found at 77 K by doping of YBCO with small amounts of zinc. The improved pinning of zinc-doped YBa2Cu3O7-x (YBCO) results in a pronounced peak effect in the field dependence of the critical current density. the trapped field at lower temperatures increases due to the increasing critical current density, however, at temperatures around 50 K cracking of the material is observed which is exposed to considerably tensile stresses due to Lorentz forces. Very high trapped fields up to 14.4 T were achieved at 22.5 K for a YBCO disk pair by the addition of silver improving the tensile strength of YBCO and by using a bandage made of a steel tube. The steel tube produces a compressive stress on YBCO after cooling down from 300 K to the measuring temperature, which is due to the higher coeeficient of thermal expansion of steel compared with that of YBCO in the a,b plane. The application of superconducting permanent magnets with trapped fields of 10 T and more in superconducting bearings would allow to obtain very high levitation pressures up to 2500 N/cm2 which is two orders of magnitude higher than the levitation pressure achievable in superconducting bearings with conventional permanent magnets. The most important problem for the application of superconducting permanent magnets is the magnetizing procedure of the YBCO material. Results of magnetizing YBCO disks by using of pulsed magnetic fields will be presented.

  16. Chemical vapor deposition of Mo thin films from Mo(CO){sub 6}

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sharma, P.; Bond, J.; Westmore, T.

    1995-12-01

    Low levels of carbon and/or oxygen contamination in metallic thin films significantly alter the physical and chemical properties of these films often rendering them useless for any commercial applications. These impurities are often observed in films grown by a technique called metallorganic chemical vapor deposition (MOCVD). MOCVD films are grown by heating a substrate in the presence of a metallorganic precursor. We wish to identify the source(s) of contamination in films produced from the Group VIB metal hexacarbonyls, M(CO){sub 6}. Towards attaining this goal we have initiated studies on the elemental composition of thin films deposited by MOCVD using Mo(CO){submore » 6} as the precursor. The results obtained so far indicate that the level of contamination of the films partially depends on the deposition temperature. Our results will be compared to published work on films deposited by laser assisted CVD from Mo(CO){sub 6}.« less

  17. Passivation of Flexible YBCO Superconducting Current Lead With Amorphous SiO2 Layer

    NASA Technical Reports Server (NTRS)

    Johannes, Daniel; Webber, Robert

    2013-01-01

    across a thermal gradient with as little flow of heat as possible to make an efficient current lead. By protecting YBCO on a flexible substrate of low thermal conductivity with SiO2, a thermally efficient and flexible current lead can be fabricated. The technology is also applicable to current leads for 4 K superconducting electronics current biasing. A commercially available thin-film YBCO composite tape conductor is first stripped of its protective silver coating. It is then mounted on a jig that holds the sample flat and acts as a heat sink. Silicon dioxide is then deposited onto the YBCO to a thickness of about 1 micron using PECVD (plasma-enhanced chemical vapor deposition), without heating the YBCO to the point where degradation occurs. Since SiO2 can have good high-frequency electrical properties, it can be used to coat YBCO cable structures used to feed RF signals across temperature gradients. The prime embodiment concerns the conduction of DC current across the cryogenic temperature gradient. The coating is hard and electrically insulating, but flexible.

  18. Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN

    NASA Astrophysics Data System (ADS)

    Chan, Silvia H.; Bisi, Davide; Liu, Xiang; Yeluri, Ramya; Tahhan, Maher; Keller, Stacia; DenBaars, Steven P.; Meneghini, Matteo; Mishra, Umesh K.

    2017-11-01

    This paper investigates the effects of the oxygen precursor flow supplied during metalorganic chemical vapor deposition (MOCVD) of Al2O3 films on the forward bias behavior of Al2O3/GaN metal-oxide-semiconductor capacitors. The low oxygen flow (100 sccm) delivered during the in situ growth of Al2O3 on GaN resulted in films that exhibited a stable capacitance under forward stress, a lower density of stress-generated negative fixed charges, and a higher dielectric breakdown strength compared to Al2O3 films grown under high oxygen flow (480 sccm). The low oxygen grown Al2O3 dielectrics exhibited lower gate current transients in stress/recovery measurements, providing evidence of a reduced density of trap states near the GaN conduction band and an enhanced robustness under accumulated gate stress. This work reveals oxygen flow variance in MOCVD to be a strategy for controlling the dielectric properties and performance.

  19. Development of YBCO Superconductor for Electric Systems: Cooperative Research and Development Final Report, CRADA Number CRD-04-150

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bhattacharya, R.

    2013-03-01

    The proposed project will be collaborative in exploration of high temperature superconductor oxide films between SuperPower, Inc. and the National Renewable Energy Laboratory. This CRADA will attempt to develop YBCO based high temperature oxide technology.

  20. On the use of copper-based substrates for YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Vannozzi, A.; Fabbri, F.; Augieri, A.; Angrisani Armenio, A.; Galluzzi, V.; Mancini, A.; Rizzo, F.; Rufoloni, A.; Padilla, J. A.; Xuriguera, E.; De Felicis, D.; Bemporad, E.; Celentano, G.

    2014-05-01

    It is well known that the recrystallization texture of heavily cold-rolled pure copper is almost completely cubic. However, one of the main drawbacks concerning the use of pure copper cube-textured substrates for YBCO coated conductor is the reduced secondary recrystallization temperature. The onset of secondary recrystallization (i.e., the occurrence of abnormal grains with unpredictable orientation) in pure copper substrate was observed within the typical temperature range required for buffer layer and YBCO processing (600-850 °C). To avoid the formation of abnormal grains the effect of both grain size adjustment (GSA) and recrystallization annealing was analyzed. The combined use of a small initial grain size and a recrystallization two-step annealing (TSA) drastically reduced the presence of abnormal grains in pure copper tapes. Another way to overcome the limitation imposed by the formation of abnormal grains is to deposit a buffer layer at temperatures where secondary recrystallization does not occur. For example, La2Zr2O7 (LZO) film with a high degree of epitaxy was grown by metal-organic decomposition (MOD) at 1000 °C on pure copper substrate. In several samples the substrate underwent secondary recrystallization. Our experiments indicate that the motion of grain boundaries occurring during secondary recrystallization process does not affect the quality of LZO film.

  1. Investigation for surface resistance of yttrium-barium-copper-oxide thin films on various substrates for microwave applications

    NASA Astrophysics Data System (ADS)

    Yao, Hongjun

    High temperature superconducting (HTS) materials such as YBCO (Yttrium-Barium-Copper-Oxide) are very attractive in microwave applications because of their extremely low surface resistance. In the proposed all-HTS tunable filter, a layer of HTS thin film on a very thin substrate (100 mum) is needed to act as the toractor that can be rotated to tune the frequency. In order to provide more substrate candidates that meet both electrical and mechanical requirements for this special application, surface resistance of YBCO thin films on various substrates was measured using microstrip ring resonator method. For alumina polycrystalline substrate, a layer of YSZ (Yttrium stabilized Zirconia) was deposited using IBAD (ion beam assisted deposition) method prior to YBCO deposition. The surface resistance of the YBCO thin film on alumina was found to be 22 mO due to high-angle grain boundary problem caused by the mixed in-plane orientations and large FWHM (full width at half maximum) of the thin film. For YBCO thin films on a YSZ single crystal substrate, the surface resistance showed even higher value of 30 mO because of the mixed in-plane orientation problem. However, by annealing the substrate in 200 Torr oxygen at 730°C prior to deposition, the in-plane orientation of YBCO thin films can be greatly improved. Therefore, the surface resistance decreased to 1.4 mO, which is still more than an order higher than the reported best value. The YBCO thin films grown on LaAlO3 single crystal substrate showed perfect in-plane orientation with FWHM less 1°. The surface resistance was as low as 0.032 mO. A tunable spiral resonator made of YBCO thin film on LaAlO3 single crystal substrate demonstrated that the resonant frequency can be tuned in a rang as large as 500 MHz by changing the gap between toractor and substrate. The Q-factor was more than 12,000, which ensured the extraordinarily high sensitivity for the proposed all-HTS tunable filter.

  2. Exfoliated YBCO filaments for second-generation superconducting cable

    NASA Astrophysics Data System (ADS)

    Solovyov, Vyacheslav; Farrell, Paul

    2017-01-01

    The second-generation high temperature superconductor (2G HTS) wire is the most promising conductor for high-field magnets such as accelerator dipoles and compact fusion devices. The key element of the wire is a thin Y1Ba2Cu3O7 (YBCO) layer deposited on a flexible metal substrate. The substrate, which becomes incorporated in the 2G conductor, reduces the electrical and mechanical performance of the wire. This is a process that exfoliates the YBCO layer from the substrate while retaining the critical current density of the superconductor. Ten-centimeter long coupons of exfoliated YBCO layers were manufactured, and detailed structural, electrical, and mechanical characterization were reported. After exfoliation, the YBCO layer was supported by a 75 μm thick stainless steel foil, which makes for a compact, mechanically stronger, and inexpensive conductor. The critical current density of the filaments was measured at both 77 K and 4.2 K. The exfoliated YBCO retained 90% of the original critical current. Similarly, tests in an external magnetic field at 4.2 K confirmed that the pinning strength of the YBCO layer was also retained following exfoliation.

  3. The effect of temperature cycling typical of low earth orbit satellites on thin films of YBa2Cu3O(7-x)

    NASA Technical Reports Server (NTRS)

    Mogro-Campero, A.; Turner, L. G.; Bogorad, A.; Herschitz, R.

    1991-01-01

    Thin films of YBa2Cu3O(7-x) (YBCO) were temperature cycled to simulate conditions of a low earth orbit satellite. In one series of tests, epitaxial and polycrystalline YBCO films were cycled between temperatures of +/- 80 C in vacuum and in nitrogen for hundreds of cycles. The room temperature resistance of an epitaxial YBCO film increased by about 10 percent, but the superconducting transition temperature was unchanged. The largest changes were for a polycrystalline YBCO film on oxidized silicon with a zirconia buffer layer, for which the transition temperature decreased by 3 K. An extended test was carried out for epitaxial films. After 3200 cycles (corresponding to about 230 days in space), transition temperatures and critical current densities remained unchanged.

  4. I-V Characteristics vs. Spatial Dissipation Maps in YBCO Grain Boundary on Bicrystal Substrates

    NASA Astrophysics Data System (ADS)

    Kwon, Chuhee; Yamamoto, Megumi; Pottish, Samuel; Haugan, Timothy; Barnes, Paul

    2008-03-01

    Grain boundary (GB) properties of YBCO films on SrTiO3 bicrystal substrates with 24 degree misorientations are examined by transport and scanning laser microscopy (SLM) techniques. Thermoelectric SLM clearly shows the location of grain boundaries, and variable temperature SLM confirms that GB has lower Tc. A series of I-V measured in superconducting states exhibit clear step-like features identified in earlier papers as sub-gap structures. The low temperature SLM shows a close relation between the step-like features and the local dissipation pattern in GB. We believe that the activation of Fiske steps is responsible for the step-like I-V, and SLM images show the spatial pattern of the self-excited resonance in GB. We will also discuss how Ca-doping and nanoparticle additions on YBCO affect the junction properties.

  5. Aspects of passive magnetic levitation based on high-T(sub c) superconducting YBCO thin films

    NASA Technical Reports Server (NTRS)

    Schoenhuber, P.; Moon, F. C.

    1995-01-01

    Passive magnetic levitation systems reported in the past were mostly confined to bulk superconducting materials. Here we present fundamental studies on magnetic levitation employing cylindrical permanent magnets floating above high-T(sub c) superconducting YBCO thin films (thickness about 0.3 mu m). Experiments included free floating rotating magnets as well as well-established flexible beam methods. By means of the latter, we investigated levitation and drag force hysteresis as well as magnetic stiffness properties of the superconductor-magnet arrangement. In the case of vertical motion of the magnet, characteristic high symmetry of repulsive (approaching) and attractive (withdrawing) branches of the pronounced force-displacement hysteresis could be detected. Achievable force levels were low as expected but sufficient for levitation of permanent magnets. With regard to magnetic stiffness, thin films proved to show stiffness-force ratios about one order of magnitude higher than bulk materials. Phenomenological models support the measurements. Regarding the magnetic hysteresis of the superconductor, the Irie-Yamafuji model was used for solving the equation of force balance in cylindrical coordinates allowing for a macroscopic description of the superconductor magnetization. This procedure provided good agreement with experimental levitation force and stiffness data during vertical motion. For the case of (lateral) drag force basic qualitative characteristics could be recovered, too. It is shown that models, based on simple asymmetric magnetization of the superconductor, describe well asymptotic transition of drag forces after the change of the magnet motion direction. Virgin curves (starting from equilibrium, i.e. symmetric magnetization) are approximated by a linear approach already reported in literature only. This paper shows that basic properties of superconducting thin films allow for their application to magnetic levitation or - without need of levitation

  6. Direct observation of twin deformation in YBa2Cu3O7-x thin films by in situ nanoindentation in TEM

    NASA Astrophysics Data System (ADS)

    Lee, Joon Hwan; Zhang, Xinghang; Wang, Haiyan

    2011-04-01

    The deformation behaviors of YBa2Cu3O7-x (YBCO) thin films with twinning structures were studied via in situ nanoindentation experiments in a transmission electron microscope. The YBCO films were grown on SrTiO3 (001) substrates by pulsed laser deposition. Both ex situ (conventional) and in situ nanoindentation were conducted to reveal the deformation of the YBCO films from the directions perpendicular and parallel to the twin interfaces. The hardness measured perpendicular to the twin interfaces is ˜50% and 40% higher than that measured parallel to the twin interfaces ex situ and in situ, respectively. Detailed in situ movie analysis reveals that the twin structures play an important role in deformation and strengthening mechanisms in YBCO thin films.

  7. Fatigue tests of YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Bamba, S.; Tanaka, Y.; Ando, T.; Ueda, H.; Ishiyama, A.; Yamada, Y.; Shiohara, Y.

    2008-02-01

    In this paper, we report the fatigue characteristics of IBAD/PLD YBCO coated conductors. A YBCO coated conductor used in the superconducting coil of a SMES system is repeatedly subjected to mechanical tensile or compressive strain due to the Lorentz force during electrical charging or discharging. The superconducting characteristic of this conductor may deteriorate because of this cyclic strain. Therefore, it is necessary to investigate the effect of cyclic strain on the superconducting characteristics of YBCO coated conductors that have a laminated structure. We developed an experimental apparatus with a U-shaped sample holder in order to apply cyclic strain to the sample tape. This apparatus was used to perform the fatigue tests on YBCO coated conductors in liquid nitrogen in the absence of an external magnetic field. The strain cycles with the maximum strain epsilonmax (zero external strain → epsilonmax → zero external strain) were applied and repeated up to 5000 times, and the Ic measurements were performed at epsilonmax. Therefore, the application of cyclic strain with epsilonmax ranging from 0.3% to 0.5% did not result in any significant deterioration of the superconducting characteristics of the conductor.

  8. All-MOCVD-grown BH laser on P-InP substrates

    NASA Astrophysics Data System (ADS)

    Nishimura, Tadashi; Ishimura, E.; Nakajima, Yasuo; Tada, Hitoshi; Kimura, T.; Ohkura, Y.; Goto, Katsuhiko; Omura, Etsuji; Aiga, Masao

    1993-07-01

    A very low cw threshold current of 2.5 mA ( 25 degree(s)C) and 8.0 mA ( 80 degree(s)C) with high reliability has been realized in the all-MOCVD grown BH lasers on p-InP substrates. A strained MQW active layer of 1.3 micrometers wavelength and the precise carrier confinement buried structure by MOCVD is employed for the BH lasers. The excellent potential of long lifetime of the all-MOCVD grown laser has also been confirmed. After the high temperature and the high current (100 degree(s)C, 200 mA) aging test, no significant degradation is observed which is comparable with the well-established LPE grown lasers. The BH laser is also operating stably over 3700 hrs under the APC condition of 50 degree(s)C, 10 mW. Finally, an extremely uniform 10-element all-MOCVD grown LD array is demonstrated, which has the threshold current uniformity of 2.4 +/- 0.1 mA ( 25 degree(s)C) and 9.2 +/- 0.2 mA ( 80 degree(s)C). The growth mechanism in the MOCVD is also described.

  9. Superconducting YBa2Cu3O7- δ Thin Film Detectors for Picosecond THz Pulses

    NASA Astrophysics Data System (ADS)

    Probst, P.; Scheuring, A.; Hofherr, M.; Wünsch, S.; Il'in, K.; Semenov, A.; Hübers, H.-W.; Judin, V.; Müller, A.-S.; Hänisch, J.; Holzapfel, B.; Siegel, M.

    2012-06-01

    Ultra-fast THz detectors from superconducting YBa2Cu3O7- δ (YBCO) thin films were developed to monitor picosecond THz pulses. YBCO thin films were optimized by the introduction of CeO2 and PrBaCuO buffer layers. The transition temperature of 10 nm thick films reaches 79 K. A 15 nm thick YBCO microbridge (transition temperature—83 K, critical current density at 77 K—2.4 MA/cm2) embedded in a planar log-spiral antenna was used to detect pulsed THz radiation of the ANKA storage ring. First time resolved measurements of the multi-bunch filling pattern are presented.

  10. Fabrication of high T(sub c) superconductor thin film devices: Center director's discretionary fund

    NASA Technical Reports Server (NTRS)

    Sisk, R. C.

    1992-01-01

    This report describes a technique for fabricating superconducting weak link devices with micron-sized geometries etched in laser ablated Y1Ba2Cu3O(x) (YBCO) thin films. Careful placement of the weak link over naturally occurring grain boundaries exhibited in some YBCO thin films produces Superconducting Quantum Interference Devices (SQUID's) operating at 77 K.

  11. Structure, morphology and Raman and optical spectroscopic analysis of In1-xCuxP thin films grown by MOCVD technique for solar cell applications

    NASA Astrophysics Data System (ADS)

    Alshahrie, Ahmed; Juodkazis, S.; Al-Ghamdi, A. A.; Hafez, M.; Bronstein, L. M.

    2017-10-01

    Nanocrystalline In1-xCuxP thin films (0 ≤ x ≤ 0.5) have been deposited on quartz substrates by a Metal-Organic Chemical Vapor Deposition (MOCVD) technique. The effect of the copper ion content on the structural crystal lattice, morphology and optical behavior of the InP thin films was assessed using X-ray diffraction, scanning electron microscopy, atomic force microscopy, Raman spectroscopy and spectrophotometry. All films exhibited a crystalline cubic zinc blende structure, inferring the solubility of the Cu atoms in the InP crystal structure. The XRD patterns demonstrated that the inclusion of Cu atoms into the InP films forced the nanoparticles in the films to grow along the (1 1 1) direction. The AFM topography showed that the Cu ions reduce the surface roughness of deposited films. The Raman spectra of the deposited films contain the first and second order anti-stoke ΓTO, ΓLO, ΧLO + ΧTO, 2ΓTO, and ΓLO + ΓTO bands which are characteristic of the InP crystalline structure. The intensities of these bands decreased with increasing the content of the Cu atoms in the InP crystals implying the creation of a stacking fault density in the InP crystal structure. The In1-xCuxP thin films have shown high optical transparency of 90%. An increase of the optical band gap from 1.38 eV to 1.6 eV was assigned to the increase of the amount of Cu ions in the InP films. The In0.5Cu0.5P thin film exhibited remarkable optical conductivity with very low dissipation factor which makes it a promising buffer window for solar energy applications.

  12. Development of an YBCO coil with SSTC conductors for high field application

    NASA Astrophysics Data System (ADS)

    Shi, Y.; Liu, H. J.; Liu, F.; Tan, Y. F.; Jin, H.; Yu, M.; Lei, L.; Guo, L.; Hong, Z. Y.

    2018-07-01

    With the continuous reduction of the production costs and improvement of the transport performance, YBCO coated conductor is the most promising candidate for the high field magnet application due to its high irreversibility field and strong mechanical properties. Presently a stable production capacity of the YBCO conductors has been achieved by Shanghai Superconducting Technology Co., Ltd (SSTC) in China. Therefore, the demand in high field application with YBCO conductors is growing in China. This paper describes the design, fabrication and preliminary experiment of a solenoid coil with YBCO conductors supplied by SSTC to validate the possibility of high field application. Four same double pancakes were manufactured and assembled for the YBCO coil where the outer diameter and height was 54.3 and 48 mm respectively to match the dimensional limitation of the 14 T background magnets. The critical current (Ic) of YBCO conductors was obtained by measuring as a function of the applied field perpendicular to the YBCO conductor surface which provides the necessary input parameters for preliminary performance evaluation of the coil. Finally the preliminary test and discussion at 77 and 4.2 K were carried out. The consistency of four double pancakes Ic was achieved. The measured results indicate that the fabrication technology of HTS coil is reliable which gives the conference for the in-field test in high field application. This YBCO coil is the first demonstration of the SSTC YBCO coated conductors.

  13. YBCO microbolometer operating below Tc - A modelization based on critical current-temperature dependence

    NASA Astrophysics Data System (ADS)

    Robbes, D.; Langlois, P.; Dolabdjian, C.; Bloyet, D.; Hamet, J. F.; Murray, H.

    1993-03-01

    Using careful measurements of the I-V curve of a YBCO thin-film microbridge under light irradiation at 780 nm and temperature close to 77 K, it is shown that the critical current versus temperature dependence is a good thermometer for estimating bolometric effects in the film. A novel dynamic voltage bias is introduced which directly gives the device current responsitivity and greatly reduces risks of thermal runaway. Detectivity is very low but it is predicted that a noise equivalent temperature of less than 10 exp -7 K/sq rt Hz would be achievable in a wide temperature range (10-80 K), which is an improvement over thermometry at the resistive transition.

  14. Thermally actuated magnetization flux pump in single-grain YBCO bulk

    NASA Astrophysics Data System (ADS)

    Yan, Yu; Li, Quan; Coombs, T. A.

    2009-10-01

    Recent progress in material processing has proved that high temperature superconductors (HTS) have a great potential to trap large magnetic fields at cryogenic temperatures. For example, HTS are widely used in MRI scanners and in magnetic bearings. However, using traditional ways to magnetize, the YBCO will always need the applied field to be as high as the expected field on the superconductor or much higher than it, leading to a much higher cost than that of using permanent magnets. In this paper, we find a method of YBCO magnetization in liquid nitrogen that only requires the applied field to be at the level of a permanent magnet. Moreover, rather than applying a pulsed high current field on the YBCO, we use a thermally actuated material (gadolinium) as an intermedia and create a travelling magnetic field through it by changing the partial temperature so that the partial permeability is changed to build up the magnetization of the YBCO gradually after multiple pumps. The gadolinium bulk is located between the YBCO and the permanent magnet and is heated and cooled repeatedly from the outer surface to generate a travelling thermal wave inwards. In the subsequent experiment, an obvious accumulation of the flux density is detected on the surface of the YBCO bulk.

  15. In-situ diagnostics for metalorganic chemical vapor deposition of yttrium barium copper oxide

    NASA Astrophysics Data System (ADS)

    Tripathi, Ashok Burton

    A new stagnation flow MOCVD research reactor is described that is designed to serve as a testbed to develop tools for "intelligent" thin film deposition, such as in-situ sensors and diagnostics, control algorithms, and thin film growth models. The reactor is designed in particular for the deposition of epitaxial YBa2Cu3O 7-delta on MgO, although with minor modifications it would be suitable for deposition of any metal-oxide thin films. The reactor is specifically designed to permit closed-loop thermal and stoichiometric control of the film growth process. Closed-loop control of precursor flow rates is accomplished by using ultraviolet absorption spectroscopy on each precursor line. Also integrated into the design is a Fourier Transform Infrared (FTIR) spectroscopy system which collects real-time, in-situ infrared polarized reflectance spectra of the film as it grows. Numerical simulation was used extensively to optimize the fluid dynamics and heat transfer to provide uniform fluxes to the substrate. As a result, thickness uniformity across the substrate is typically within 3% from the center to the edge of the substrate. Experimental studies of thin films grown in the Y/Ba/Cu/O system have been carried out. The films have been characterized by Rutherford Backscattering Spectrometry and X-ray Diffraction. Results indicate c-axis oriented grains with pure 1:2:3 phase YBCO, good spatial uniformity, and a low degree of c-axis wobble. Experimental growth data is used in a gas phase and surface chemistry model to calculate sticking coefficients for yttrium oxide, barium oxide, and copper oxide on YBCO. In-situ FTIR and Coherent Gradient Sensing (CGS) analysis of growing films has been performed, yielding accurate substrate temperature, film thickness monitoring, and full-field, real-time curvature maps of the films. In addition, we have implemented CGS to obtain full-field in-situ images of local curvature during oxygenation and deoxygenation of YBCO films. An analysis

  16. RAPID COMMUNICATION: Large-area uniform ultrahigh-Jc YBa2Cu3O7-x film fabricated by the metalorganic deposition method using trifluoroacetates

    NASA Astrophysics Data System (ADS)

    Araki, Takeshi; Yamagiwa, Katsuya; Hirabayashi, Izumi; Suzuki, Katsumi; Tanaka, Shoji

    2001-07-01

    Ultrahigh-Jc YBa2Cu3O7-x (YBCO) films have been successfully fabricated by the metalorganic deposition method using a trifluoroacetate coating solution which is prepared by a newly developed purification technique, the solvent-into-gel (SIG) method. The prepared pure coating solution has less than 0.25% impurities and has a wide flexibility in process conditions to obtain high-Jc YBCO film. Using this feature, we have successfully formed 50 mm diameter YBCO films, which have a critical current density over 10 MA cm-2 (77 K, 0 T) on LaAlO3 single crystalline substrates.

  17. Chemical vapor deposition of high T(sub c) superconducting films in a microgravity environment

    NASA Technical Reports Server (NTRS)

    Levy, Moises; Sarma, Bimal K.

    1994-01-01

    Since the discovery of the YBaCuO bulk materials in 1987, Metalorganic Chemical Vapor Deposition (MOCVD) has been proposed for preparing HTSC high T(sub c) films. This technique is now capable of producing high-T(sub c) superconducting thin films comparable in quality to those prepared by any other methods. The MOCVD technique has demonstrated its superior advantage in making large area high quality HTSC thin films and will play a major role in the advance of device applications of HTSC thin films. The organometallic precursors used in the MOCVD preparation of HTSC oxide thin films are most frequently metal beta-diketonates. High T(sub c) superconductors are multi-component oxides which require more than one component source, with each source, containing one kind of precursor. Because the volatility and stability of the precursors are strongly dependent on temperature, system pressure, and carrier gas flow rate, it has been difficult to control the gas phase composition, and hence film stoichiometry. In order circumvent these problems we have built and tested a single source MOCVD reactor in which a specially designed vaporizer was employed. This vaporizer can be used to volatilize a stoichiometric mixture of diketonates of yttrium, barium and copper to produce a mixed vapor in a 1:2:3 ratio respectively of the organometellics. This is accomplished even though the three compounds have significantly different volatilities. We have developed a model which provides insight into the process of vaporizing mixed precursors to produce high quality thin films of Y1Ba2Cu3O7. It shows that under steady state conditions the mixed organometallic vapor must have a stoichiometric ratio of the individual organometallics identical to that in the solid mixture.

  18. Experimental studies of diffusion welding of YBCO to copper using solder layers

    NASA Astrophysics Data System (ADS)

    Xie, Y.; Ouyang, Z.; Shi, L.; Kuang, Z.; Meng, M.

    2017-02-01

    The welding technology is of great importance in YBCO application. To make better joints, the diffusion welding of YBCO tape to copper has been carried out in a vacuum environment. In consideration of high welding temperature (above 200°C) could do damage to the material performance, a new kind of diffusion welding method with temperature below 200 °C has been developed recently. A new welding appliance which can offer pressure over 35Kg/mm2 and controlled temperature has been designed and built; several YBCO coated conductors joints soldered with different melting points of tins has been tested. The results showed that the diffusion can perfectly connect YBCO to copper as well as stainless steel and resistance of the joint was low, and the YBCO tape could bear 217°C for at least 15mins.

  19. Studies of anisotropic in-plane aligned a-axis oriented YBa(2)Cu(3)O(7-x) thin films

    NASA Astrophysics Data System (ADS)

    Trajanovic, Zoran

    1997-12-01

    Due to their layered planar structure, cuprate oxide superconductors possess remarkable anisotropic properties which may be related to their high transition temperatures. In-plane aligned a-axis YBa2Cu3O7 (YBCO) films are good candidates for such anisotropic studies. Furthermore, the full advantage of favorable material characteristics can be then utilized in applications such as vertical SNS junctions with the leads along the b-direction of YBCO and other novel junction configurations. High quality, smooth, in-plane aligned films are obtained on (100) LaSrGaO4. Form x-ray data, the films show complete b- and c-axes separation for the measured a-axis orientation. The anisotropic resistivity ratio (ρ c/ρ b), measured along the two crystallographic axes of single films gives ρ c/ρ b of ≈20 near the transition, with T cs near 90 K. In such films the grain boundary effects can be decoupled from the intrinsic anisotropic properties of YBCO. From oxygen annealing studies it was estimated that the CuO chains supply about 60% of the carriers. From J c measurements it is determined that the orientation of magnetic field with respect to the crystallographic film axes is the primary factor governing the J c values. The angular dependence of J c on the applied magnetic field is compared against various theoretical models showing the best agreement with the modified Ginzburg-Landau's anisotropic mass model (at T ≈ T c) and Tinkham's thin film model (at T < T c). By utilizing the Co-dopant, the coupling between CuO2 planes and the resulting enhancement of the intrinsic anisotropy of YBCO can be studied. Deposition and cooling conditions are shown to be the primary factor that influence the quality of dopant incorporation and the resulting oxygen ordering within the YBCO lattice. Various complex structures and devices utilizing in-plane aligned, a-axis films are presented. Other materials exhibiting in-plane alignment and a-axis growth are described. Optional substrates

  20. Phase Evolution of YBa2Cu3O7-x films by all-chemical solution deposition route for coated conductors

    NASA Astrophysics Data System (ADS)

    Zhao, Yue; Tang, Xiao; Wu, Wei; Grivel, Jean-Claude

    2014-05-01

    In order to understand the all-chemical-solution-deposition (CSD) processes for manufacturing coated conductors, we investigated the phase evolution of YBa2Cu3O7 (YBCO) films deposited by a low-fluorine metal-organic solution deposition (LF-MOD) method on CSD derived Ce0.9La0.1O2/Gd2Zr2O7/NiW. It is shown that the phase transition from the pyrolyzed film to fully converted YBCO film in the LF-MOD process is similar to that in typical trifluoroacetates-metal organic deposition (TFA-MOD) processes even though the amount of TFA in the solution is reduced by almost one half compared with typical TFA-MOD cases. Moreover, we found that the formation of impurities (mainly BaCeO3, NiWO4 and NiO) is strongly related to the annealing temperature, i.e., the diffusion controlled reactions become intensive from 760 oC, which might be connected with the poor structural and superconducting properties of the films deposited at high sintering temperatures. Based on these results, the optimized growth conditions of YBCO films were established, and a high critical current density (Jc) of about 2 MA/cm2 (77 K, self field) is achieved in a 200 nm thick YBCO film in the architecture made by our all CSD route.

  1. Investigation of kinetics of MOCVD systems

    NASA Astrophysics Data System (ADS)

    Anderson, Timothy J.

    1991-12-01

    Several issues related to epitaxy of III-V semiconductors by hydride VPE and MOCVD were investigated. A complex chemical equilibrium analysis was performed in order to investigate the controllability of hydride VPE. The critical control parameters for the deposition of InGaAsP Lattice matched to InP are deposition temperature, system pressure, Group III Molar Ratio, Group V Molar Ratio. An experimental characterization of the Ga and In source reactors was accomplished. A MOCVD System was constructed for the deposition of AlGaAs. An investigation was performed to determine the controlling parameters of laser-enhanced deposition of GaAs and AlGaAs using an argon ion laser. Enhancement of deposition was observed when the system was operated in the reaction limited regime. The use of a Ga/In alloy source was studied for the deposition of GaInAs by the Hydride method. The system was used to produce state-of-the-art P-I-N photo-detectors.

  2. MOCVD growth and characterization of gallium nitride and gallium antimonide nanowires

    NASA Astrophysics Data System (ADS)

    Burke, Robert Alan

    Group-III nitride and group-III antimonide thin films have been used for years in optoelectronic, high-speed applications, and high power/high temperature applications such as light emitting diodes (LEDs), microwave power devices, and thermovoltaics. In recent years, nanowires have gained interest due to the ability to take advantage of their geometry for increased light absorption and the synthesis of radial heterostructures. Several growth techniques have been explored for the growth of GaN and GaSb nanowires. Metal-organic chemical vapor deposition (MOCVD) is of particular interest due to its use in the commercial growth and fabrication of GaN-based and GaSb-based devices. The first part of this thesis focused on addressing several key issues related to the growth of GaN nanowires by MOCVD. Preliminary studies investigated the effect of growth conditions on GaN nanowire formation in a hot wall MOCVD reactor. A computational fluid dynamics-based model was developed to predict the gas phase velocity, temperature and concentration profiles in the reactor. The results demonstrate a strong dependence of GaN nanowire growth on substrate position within the reactor which is due to the rapid reaction and depletion of precursors near the gas inlet of the reactor. Ni-catalyzed GaN nanowire growth was observed to occur over the temperature range of 800-900°C, which is significantly lower than typical GaN thin film temperatures. The nanowires, however, exhibited a tapered diameter due to thin film deposition which occurred simultaneously with nanowire growth. Based on the low growth temperatures, TEM characterization was carried out to investigate the nature of the catalyst. Through these studies, the catalyst was found to consist of Ni3Ga, indicating the presence of a vapor-solid-solid growth mechanism. In an attempt to improve the nanowire growth selectivity, GeCl4 was added during growth resulting in a drastic increase in nanowire density and a reduction in the tapering

  3. Solution-Based Approaches to Fabrication of YBa2Cu3O7-δ (YBCO): Precursors of Tri-Fluoroacetate (TFA) and Nanoparticle Colloids

    NASA Astrophysics Data System (ADS)

    Mukhopadhyay, S. M.; Su, J.; Chintamaneni, V.

    2007-10-01

    Detailed investigation of superconducting films of YBa2Cu3O7-δ (YBCO) prepared from solution-based precursors have been performed. Two precursors have been compared in this study: the presently used trifluoroacetate (TFA) solution and a recently developed colloidal suspension containing nanoparticles of mixed oxide. Detailed analyses of the evolution of microstructure and chemistry of the films have been performed, and process parameters have been correlated with final superconducting properties. Both films need two heating steps: a low temperature calcination and a higher temperature crystallization step. For TFA films, it was seen that the heating rate during calcination needs to be carefully optimized and is expected to be slow. For the alternate process using a nanoparticle precursor, a significantly faster calcination rate is possible. In the TFA process, the Ba ion remains as fluoride and the Y remains as oxyfluoride after calcination. This implies that, during the final crystallization stage to form YBCO, fluorine-containing gases will evolve, resulting in residual porosity. On the other hand, the film from the nanoparticle process is almost fully oxidized after calcination. Therefore, no gases evolve at the final firing (crystallization) stage, and the film has much lower porosity. The superconducting properties of both types of films are adequate, but the nanoparticle films appear to have persistently higher J c values. Moreover, they show improved flux pinning in higher magnetic fields, probably due to nanoscale precipitates of a Cu-rich phase. In addition, the nanocolloid films seem to show additionally enhanced flux pinning when doped with minute amounts of second phase precipitates. It therefore appears that, whereas the TFA process is already quite successful, the newly developed nanoparticle process has significant scope for additional improvement. It can be scaled-up with ease, and can be easily adapted to incorporate nanoscale flux pinning defects

  4. A Thermally Actuated Flux Pump for Energizing YBCO Pucks

    DTIC Science & Technology

    2016-05-01

    transmitted through the thermal magnetic material sweeping magnetic field lines into the superconducting puck. We used YBCO as the superconductor with...of the YBCO sweeping vortices into the superconductor . These vortices would gradually accumulate in the superconductor . Successes have been reported...superconducting flux pump,” PHYSICA C, vol. 468, pp. 153-159, 2008. [2] T. A. Coombs, Z. Hong, Y. Yan and C. D. Rawlings, “ Superconductors : The

  5. Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Nouhi, Akbar (Inventor); Stirn, Richard J. (Inventor)

    1990-01-01

    A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, wherein a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd.sub.1-x Mn.sub.x Te, wherein 0.ltoreq..times..ltoreq.0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) maganese (TCPMn) is employed. To prevent TCPMn condensation during the introduction thereof int the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, wherein the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.

  6. Improved Epitaxy and Surface Morphology in YBa2Cu3Oy Thin Films Grown on Double Buffered Si Wafers

    NASA Astrophysics Data System (ADS)

    Gao, J.; Kang, L.; Wong, H. Y.; Cheung, Y. L.; Yang, J.

    Highly epitaxial thin films of YBCO have been obtained on silicon wafers using a Eu2CuO4/YSZ (yttrium-stabilized ZrO2) double buffer. Our results showed that application of such a double buffer can significantly enhance the epitaxy of grown YBCO. It also leads to an excellent surface morphology. The average surface roughness was found less than 5 nm in a large range. The results of X-ray small angle reflection and positron spectroscpy demonstrate a very clear and flat interface between YBCO and buffer layers. The Eu2CuO4/YSZ double buffer could be promising for coating high-TC superconducting films on various reactive substrates.

  7. Fabrication of interface-modified ramp-edge junction on YBCO ground plane with multilayer structure

    NASA Astrophysics Data System (ADS)

    Wakana, H.; Adachi, S.; Kamitani, A.; Sugiyama, H.; Sugano, T.; Horibe, M.; Ishimaru, Y.; Tarutani, Y.; Tanabe, K.

    2003-10-01

    We examined the fabrication conditions to obtain high-quality ramp-edge Josephson junctions on a liquid-phase-epitaxy YBa 2Cu 3O y (LPE-YBCO) ground plane, in particular, focusing on the fabrication of a suitable insulating layer on the ground plane and the post-annealing conditions to load oxygen to the ground plane. A (LaAlO 3) 0.3-(SrAl 0.5Ta 0.5O 3) 0.7 (LSAT) insulating film on the ground planes exhibited a conductance ranging from 10 -4 to 10 -8 S after deposition of an upper superconducting film, suggesting existence of some leak paths through the LSAT insulating layer. By introducing approximately 30 nm thick SrTiO 3 (STO) buffer layers on both side of the LSAT insulating layer. We reproducibly obtained a conductance lower than 10 -8 S. The dielectric constant of the STO/LSAT/STO layer was 32, which was slightly larger than that of the single LSAT layer. It was found that a very slow cooling rate of 1.0 °C/h in oxygen was needed to fully oxidize the ground plane through the STO/LSAT/STO insulating layers, while the oxidation time could be effectively reduced by introducing via holes in the insulating layer at an interval of 200 μm. Ramp-edge junctions on LPE-YBCO ground planes with STO/LSAT/STO insulating layers exhibited a 1 σ-spread in Ic of 8% for 100-junction series-arrays and a sheet inductance of 0.7 pH/□ at 4.2 K.

  8. Comparison of AlGaAs Oxidation in MBE and MOCVD Grown Samples

    DTIC Science & Technology

    2002-01-01

    vertical cavity surface emitting lasers ( VCSELs ) [1, 2, 3]. They are also being... molecular beam epitaxy ( MBE ) [5, 6] or metal organic chemical vapor deposition (MOCVD) [7, 8]. The MBE -grown A1GaAs layers are sometimes pseudo or digital...Simultaneous wet-thermal oxidation of MBE and MOCVD grown AlxGal_xAs layers (x = 0.1 to 1.0) showed that the epitaxial growth method does not

  9. High performance of Ga-doped ZnO transparent conductive layers using MOCVD for GaN LED applications.

    PubMed

    Horng, Ray-Hua; Shen, Kun-Ching; Yin, Chen-Yang; Huang, Chiung-Yi; Wuu, Dong-Sing

    2013-06-17

    High performance of Ga-doped ZnO (GZO) prepared using metalorganic chemical vapor deposition (MOCVD) was employed in GaN blue light-emitting diodes (LEDs) as transparent conductive layers (TCL). By the post-annealing process, the annealed 800°C GZO films exhibited a high transparency above 97% at wavelength of 450 nm. The contact resistance of GZO decreased with the annealing temperature increasing. It was attributed to the improvement of the GZO crystal quality, leading to an increase in electron concentration. It was also found that some Zn atom caused from the decomposition process diffused into the p-GaN surface of LED, which generated a stronger tunneling effect at the GZO/p-GaN interface and promoted the formation of ohmic contact. Moreover, contrast to the ITO-LED, a high light extraction efficiency of 77% was achieved in the GZO-LED at injection current of 20 mA. At 350 mA injection current, the output power of 256.51 mW of GZO-LEDs, corresponding to a 21.5% enhancement as compared to ITO-LEDs was obtained; results are promising for the development of GZO using the MOCVD technique for GaN LED applications.

  10. Coaxial line configuration for microwave power transmission study of YBa2Cu3O(7-delta) thin films

    NASA Technical Reports Server (NTRS)

    Chorey, C. M.; Miranda, F. A.; Bhasin, K. B.

    1991-01-01

    Microwave transmission measurements through YBa2Cu3O(7-delta) (YBCO) high-transition-temperature superconducting thin films on lanthanum aluminate (LaAlO3) have been performed in a coaxial line at 10 GHz. LaAlO3 substrates were ultrasonically machined into washer-shaped discs, polished, and coated with laser-ablated YBCO. These samples were mounted in a 50-ohm coaxial air line to form a short circuit. The power transmitted through the films as a function of temperature was used to calculate the normal state conductivity and the magnetic penetration depth for the films.

  11. High-quality nonpolar a-plane GaN epitaxial films grown on r-plane sapphire substrates by the combination of pulsed laser deposition and metal–organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Yang, Weijia; Zhang, Zichen; Wang, Wenliang; Zheng, Yulin; Wang, Haiyan; Li, Guoqiang

    2018-05-01

    High-quality a-plane GaN epitaxial films have been grown on r-plane sapphire substrates by the combination of pulsed laser deposition (PLD) and metal–organic chemical vapor deposition (MOCVD). PLD is employed to epitaxial growth of a-plane GaN templates on r-plane sapphire substrates, and then MOCVD is used. The nonpolar a-plane GaN epitaxial films with relatively small thickness (2.9 µm) show high quality, with the full-width at half-maximum values of GaN(11\\bar{2}0) along [1\\bar{1}00] direction and GaN(10\\bar{1}1) of 0.11 and 0.30°, and a root-mean-square surface roughness of 1.7 nm. This result is equivalent to the quality of the films grown by MOCVD with a thickness of 10 µm. This work provides a new and effective approach for achieving high-quality nonpolar a-plane GaN epitaxial films on r-plane sapphire substrates.

  12. Excess current experiment on YBCO tape conductor with metal stabilized layer

    NASA Astrophysics Data System (ADS)

    Tasaki, Kenji; Yazawa, Takashi; Ono, Michitaka; Kuriyama, Toru

    2006-06-01

    Excess current experiments were performed using YBCO tape conductors with a metal stabilized layer on the superconducting layer. The purpose of this research is to obtain the stable criteria of energy dissipation when YBCO tape is forced to flow excess current higher than its critical current. This situation should be considered in power applications. In the experiments short-length samples were immersed in liquid nitrogen and several cycles of 50Hz sinusoidal current were supplied to the samples by an induction voltage regulator. The critical current of the samples was about 110 A. With pulse length as long as 60 ms, YBCO tapes were able to be energized up to twelve times as the critical current without electrical or mechanical deformation. Prior to the excess current experiments, temperature dependency of resistance of the sample was measured so that the temperature rise was estimated by the generated resistance. It is found that YBCO tapes with a copper stabilized layer can be transiently heated to over 400K without degradation.

  13. Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 thin film capacitors

    NASA Astrophysics Data System (ADS)

    Lee, J.; Johnson, L.; Safari, A.; Ramesh, R.; Sands, T.; Gilchrist, H.; Keramidas, V. G.

    1993-07-01

    Pb(Zr(0.52)Ti(0.48))O3 (PZT)/Y1Ba2Cu3O(x) (YBCO) heterostructures were grown by pulsed laser deposition, in which PZT films were epitaxial, highly oriented, or polycrystalline. These PZT films were obtained by varying the deposition temperature from 550 to 760 C or by using various substrates such as SrTiO3 (100), MgO (100), and r-plane sapphire. PZT films with Pt top electrodes exhibited large fatigue with 35-50 percent loss of the remanent polarization after 10 exp 9 cycles, depending on the crystalline quality. Polycrystalline films showed better fatigue resistance than epitaxial or highly oriented films. However, PZT films with both top and bottom YBCO electrodes had significantly improved fatigue resistance for both epitaxial and polycrystalline films. Electrode material seems to be a more important parameter in fatigue than the crystalline quality of the PZT films.

  14. Growth of epitaxial Pb(Zr,Ti)O3 films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Lee, J.; Safari, A.; Pfeffer, R. L.

    1992-10-01

    Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary have been grown on MgO (100) and Y1Ba2Cu3Ox (YBCO) coated MgO substrates. Substrate temperature and oxygen pressure were varied to achieve ferroelectric films with a perovskite structure. Films grown on MgO had the perovskite structure with an epitaxial relationship with the MgO substrate. On the other hand, films grown on the YBCO/MgO substrate had an oriented structure to the surface normal with a misorientation in the plane parallel to the surface. The measured dielectric constant and loss tangent at 1 kHz were 670 and 0.05, respectively. The remnant polarization and coercive field were 42 μC/cm2 and 53 kV/cm. A large internal bias field (12 kV/cm) was observed in the as-deposited state of the undoped PZT films.

  15. Acid anhydrides: a simple route to highly pure organometallic solutions for superconducting films

    NASA Astrophysics Data System (ADS)

    Roma, N.; Morlens, S.; Ricart, S.; Zalamova, K.; Moreto, J. M.; Pomar, A.; Puig, T.; Obradors, X.

    2006-06-01

    The presence of impurities in the precursor metal carboxylate solutions for the preparation of epitaxial thin films by metal organic decomposition (MOD) is substantially avoided by the use of acid anhydrides. In particular, trifluoroacetic anhydride (TFAA) was used for the synthesis of the starting Y, Ba and Cu trifluoroacetates used in YBa2Cu3O7-x (YBCO) preparation by the MOD process. In this way, highly stable organometallic precursors and a short pyrolysis process could be used leading to YBCO films with high critical currents (Jc >=2-4 MA cm-2 at 77 K). Furthermore, the reproducibility of the results has been ascertained.

  16. Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Nouhi, Akbar (Inventor); Stirn, Richard J. (Inventor)

    1988-01-01

    A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, in which a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd(sub 1-x)Mn(sub x)Te, in which 0 is less than or equal to x less than or equal to 0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) manganese (TCPMn) is employed. To prevent TCPMn condensation during its introduction into the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, in which the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.

  17. Effect of texture dispersion on the effective biaxial modulus of fiber-textured hexagonal, tetragonal, and orthorhombic films

    NASA Astrophysics Data System (ADS)

    Wu, Huaping; Wu, Linzhi; Du, Shanyi

    2008-04-01

    The effective biaxial modulus (Meff) of fiber-textured hexagonal, tetragonal, and orthorhombic films is estimated by using the Voigt-Reuss-Hill and Vook-Witt grain-interaction models. The orientation distribution function with Gaussian distributions of the two Euler angles θ and ϕ is adopted to analyze the effect of texture dispersion degree on Meff. Numerical results that are based on ZnO, BaTiO3, and yttrium barium copper oxide (YBCO) materials show that the Vook-Witt average of Meff is identical to the Voigt-Reuss-Hill average of Meff for the (001) plane of ideally fiber-textured hexagonal and tetragonal films. The ϕ distribution has no influence on Meff of the (hkl)-fiber-textured hexagonal film at any θ distribution in terms of the isotropy in the plane perpendicular to the [001] direction. Comparably, tetragonal and orthorhombic films represent considerable actions of ϕ dispersion on Meff, and the effect of ϕ dispersion on Meff of a (001)-fiber-textured YBCO film is smaller than that for a (001)-fiber-textured BaTiO3 film since the shear anisotropic factor in the (001) shear plane of a YBCO film more closely approaches 1. Enhanced θ and ϕ distributions destroy the perfect fiber textures, and as a result, the films exhibit an evolution from ideal (hkl) fiber textures to random textures with varying full widths at half maximums of θ and ϕ.

  18. Effect of Hydrogen in Zinc Oxide Thin-Film Transistor Grown by Metal Organic Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Jo, Jungyol; Seo, Ogweon; Jeong, Euihyuk; Seo, Hyunseok; Lee, Byeongon; Choi, Yearn-Ik

    2007-04-01

    We studied the transport characteristics of ZnO grown by metal organic chemical vapor deposition (MOCVD) at temperatures between 200 and 500 °C. The crystal quality, measured by X-ray diffraction, improved as the growth temperature increased. However, the mobility measured in the thin-film transistor (TFT) decreased in films grown at higher temperatures. In our experiments, a ZnO TFT grown at 250 °C showed good electrical characteristics, with a 13 cm2 V-1 s-1 mobility and a 103 on/off ratio. We conclude that hydrogen incorporated during MOCVD growth plays an important role in determining the transistor characteristics. This was supported by results of secondary ion mass spectroscopy (SIMS), where a higher hydrogen concentration was observed in films grown at lower temperatures.

  19. Probing localized strain in solution-derived YB a2C u3O7 -δ nanocomposite thin films

    NASA Astrophysics Data System (ADS)

    Guzman, Roger; Gazquez, Jaume; Mundet, Bernat; Coll, Mariona; Obradors, Xavier; Puig, Teresa

    2017-07-01

    Enhanced pinning due to nanoscale strain is unique to the high-Tc cuprates, where pairing may be modified with lattice distortion. Therefore a comprehensive understanding of the defect landscape is required for a broad range of applications. However, determining the type and distribution of defects and their associated strain constitutes a critical task, and for this aim, real-space techniques for atomic resolution characterization are necessary. Here, we use scanning transmission electron microscopy (STEM) to study the atomic structure of individual defects of solution-derived YB a2C u3O7 (YBCO) nanocomposites, where the inclusion of incoherent secondary phase nanoparticles within the YBCO matrix dramatically increases the density of Y1B a2C u4O8 (Y124) intergrowths, the commonest defect in YBCO thin films. The formation of the Y124 is found to trigger a concatenation of strain-derived interactions with other defects and the concomitant nucleation of intrinsic defects, which weave a web of randomly distributed nanostrained regions that profoundly transform the vortex-pinning landscape of the YBCO nanocomposite thin films.

  20. Radiation effects on p+n InP junctions grown by MOCVD

    NASA Technical Reports Server (NTRS)

    Messenger, Scott R.; Walters, Robert J.; Panunto, M. J.; Summers, Geoffrey P.

    1994-01-01

    The superior radiation resistance of InP over other solar cell materials such as Si or GaAs has prompted the development of InP cells for space applications. The early research on radiation effects in InP was performed by Yamaguchi and co-workers who showed that, in diffused p-InP junctions, radiation-induced defects were readily annealed both thermally and by injection, which was accompanied by significant cell recovery. More recent research efforts have been made using p-InP grown by metalorganic chemical vapor deposition (MOCVD). While similar deep level transient spectroscopy (DLTS) results were found for radiation induced defects in these cells and in diffused junctions, significant differences existed in the annealing characteristics. After injection annealing at room temperature, Yamaguchi noticed an almost complete recovery of the photovoltaic parameters, while the MOCVD samples showed only minimal annealing. In searching for an explanation of the different annealing behavior of diffused junctions and those grown by MOCVD, several possibilities have been considered. One possibility is the difference in the emitter structure. The diffused junctions have S-doped graded emitters with widths of approximately 0.3 micrometers, while the MOCVD emitters are often doped with Si and have widths of approximately 300A (0.03 micrometers). The difference in the emitter thickness can have important effects, e.g. a larger fraction of the total photocurrent is generated in the n-type material for thicker emitters. Therefore the properties of the n-InP material may explain the difference in the observed overall annealing behavior of the cells.

  1. CVD method for forming B.sub.i -containing oxide superconducting films

    DOEpatents

    Wessels, Bruce W.; Marks, Tobin J.; Richeson, Darrin S.; Tonge, Lauren M.; Zhang, Jiming

    1994-01-01

    Films of high T.sub.c Bi-Sr-Ca-Cu-O superconductor have been prepared by MOCVD using volatile metal organic precursors and water vapor. The metal organic precursors are volatized along with a bismuth source, such as Bi(C.sub.6 H.sub.5).sub.3, deposited on a heated substrate to form a film, and annealed.

  2. Method of forming superconducting Tl-Ba-Ca-Cu-O films

    DOEpatents

    Wessels, Bruce W.; Marks, Tobin J.; Richeson, Darrin S.; Tonge, Lauren M.; Zhang, Jiming

    1993-01-01

    A method of forming a superconducting Tl-Ba-Ca-Cu-O film is disclosed, which comprises depositing a Ba-Ca-Cu-O film on a substrate by MOCVD, annealing the deposited film and heat-treating the annealed film in a closed circular vessel with TlBa.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x and cooling to form said superconducting film of TlO.sub.m Ba.sub.2 Ca.sub.n-1 Cu.sub.n O.sub.2n+2, wherein m=1,2 and n=1,2,3.

  3. The early growth and interface of YBa 2Cu 3O y thin films deposited on YSZ substrates

    NASA Astrophysics Data System (ADS)

    Gao, J.; Tang, W. H.; Yau, C. Y.

    2001-11-01

    Epitaxial thin films of YBa 2Cu 3O y (YBCO) have been prepared on yttrium-stabilized zirconia substrates with and without a buffer layer. The early growth, crystallinity and surface morphology of these thin films have been characterized by X-ray diffraction, rocking curves, scanning electron microscope, in situ conductance measurements, and surface step profiler. The full width at half maximum of the ( 0 0 5 ) peak of rocking curve was found to be less than 0.1°. Over a wide scanning range of 2000 μm the average surface roughness is just 5 nm, indicating very smooth films. Grazing incident X-ray reflection and positron annihilation spectroscopy shows well-defined interfaces between layers and substrate. By applying a new Eu 2CuO 4 (ECO) buffer layer the initial formation of YBCO appears to grow layer-by-layer rather than the typical island growth mode. The obtained results reveal significant improvements at the early formation and crystallinity of YBCO by using the 214-T ‧ ECO as a buffer layer.

  4. Towards Isotropic Vortex Pinning in YBCO Films with Double-doping BHO-Y2O3 and BZO-Y2O3 Artificial Pining Centers

    NASA Astrophysics Data System (ADS)

    Gautam, Bibek; Sebastian, Mary Ann; Chen, Shihong; Haugan, Timothy; Chen, Yanbin; Xing, Zhongwen; Prestigiacomo, Joseph; Osofsky, Mike; Wu, Judy

    2017-12-01

    Strong and isotropic vortex pinning landscape is demanded for high field applications of YaBa2Cu3O7-x (YBCO) epitaxial thin films. Double-doping (DD) of artificial pinning centers (APCs) of mixed morphologies has been identified as a viable approach for this purpose. This work presents a comparative study on the transport critical current density J c (H, θ) of 3.0 vol.%Y2O3+2.0 (or 6.0) vol.% BaZrO3 (BZO DD) and 3.0 vol.%Y2O3+ 2.0 (or 6.0) vol.% BaHfO3 (BHO DD) films. Based on the elastic strain model, BaHfO3 (BHO) nanorods have lower rigidity than their BaZrO3 (BZO) counterparts, which means their c-axis alignment is more susceptible to the local strain generated by the secondary dopant of Y2O3. Considering the increasing strain field with higher BZO (or BHO doping), the higher susceptibility may result in a large portion of the BHO APCs moving away from perfect c-axis alignment and enhancing isotropic pinning with respect to the H orientation. This is confirmed since the BHO DD films illustrate a less pronounced J c peak at H//c-axis and hence more isotropic J c(θ) than their BZO DD counterparts. At 9.0 T, the variation of the J c across the entire θ range (0-90 degree) is less than 18% for the BHO DD film, in contrast to about 100% for the 2.0 vol.% BZO DD counterpart. At the higher BHO concentration of 6.0 vol.%, this higher tunability of the Y2O3 leads to increased ab-plane aligned BHO APCs and hence enhanced J c at H//ab-plane.

  5. Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate

    PubMed Central

    Zhang, Lei; Yu, Jiaoxian; Hao, Xiaopeng; Wu, Yongzhong; Dai, Yuanbin; Shao, Yongliang; Zhang, Haodong; Tian, Yuan

    2014-01-01

    GaN crystals without cracks were successfully grown on a MOCVD-GaN/6H-SiC (MGS) substrate with a low V/III ratio of 20 at initial growth. With a high V/III ratio of 80 at initial growth, opaque GaN polycrystals were obtained. The structural analysis and optical characterization reveal that stress has a great influence on the growth of the epitaxial films. An atomic level model is used to explain these phenomena during crystal growth. It is found that atomic mobility is retarded by compressive stress and enhanced by tensile stress. PMID:24569601

  6. Impact of oxygen diffusion on superconductivity in YBa2Cu3O7 -δ thin films studied by positron annihilation spectroscopy

    NASA Astrophysics Data System (ADS)

    Reiner, M.; Gigl, T.; Jany, R.; Hammerl, G.; Hugenschmidt, C.

    2018-04-01

    The oxygen deficiency δ in YBa2Cu3O7 -δ (YBCO) plays a crucial role for affecting high-temperature superconductivity. We apply (coincident) Doppler broadening spectroscopy of the electron-positron annihilation line to study in situ the temperature dependence of the oxygen concentration and its depth profile in single crystalline YBCO film grown on SrTiO3 (STO) substrates. The oxygen diffusion during tempering is found to lead to a distinct depth dependence of δ , which is not accessible using x-ray diffraction. A steady state reached within a few minutes is defined by both, the oxygen exchange at the surface and at the interface to the STO substrate. Moreover, we reveal the depth-dependent critical temperature Tc in the as prepared and tempered YBCO film.

  7. Study of the inhomogeneity of critical current under in-situ tensile stress for YBCO tape

    NASA Astrophysics Data System (ADS)

    Zhu, Y. P.; Chen, W.; Zhang, H. Y.; Liu, L. Y.; Pan, X. F.; Yang, X. S.; Zhao, Y.

    2018-07-01

    A Hall sensor system was used to measure the local critical current of YBCO tape with high spatial resolution under in-situ tensile stress. The hot spot generation and minimum quench energy of YBCO tape, which depended on the local critical current, was calculated through the thermoelectric coupling model. With the increase in tensile stress, the cracks which have different dimensions and critical current degradation arose more frequently and lowered the thermal stability of the YBCO tape.

  8. Fiber optic quench detection via optimized Rayleigh Scattering in high-field YBCO accelerator magnets

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Flanagan, Gene

    Yttrium barium copper oxide (YBCO) coated conductors are known for their ability to operate in the superconducting state at relatively high temperatures, even above the boiling point of liquid nitrogen (77 K). When these same conductors are operated at lower temperatures, they are able to operate in much higher magnetic fields than traditional superconductors like NiTi or Nb 3Sn. Thus, YBCO superconducting magnets are one of the primary options for generating the high magnetic fields needed for future high energy physics devices. Due to slow quench propagation, quench detection remains one of the primary limitations to YBCO magnets. Fiber opticmore » sensing, based upon Rayleigh scattering, has the potential for spatial resolution approaching the wavelength of light, or very fast temporal resolution at low spatial resolution, and a continuum of combinations in between. This project has studied, theoretically and experimentally, YBCO magnets and Rayleigh scattering quench detection systems to demonstrate feasibility of the systems for YBCO quench protection systems. Under this grant an experimentally validated 3D quench propagation model was used to accurately define the acceptable range of spatial and temporal resolutions for effective quench detection in YBCO magnets and to evaluate present-day and potentially improved YBCO conductors. The data volume and speed requirements for quench detection via Rayleigh scattering required the development of a high performance fiber optic based quench detection/data acquisition system and its integration with an existing voltage tap/thermo-couple based system. In this project, optical fibers are tightly co-wound into YBCO magnet coils, with the fiber on top of the conductor as turn-to-turn insulation. Local changes in the temperature or strain of the conductor are sensed by the optical fiber, which is in close thermal and mechanical contact with the conductor. Intrinsic imperfections in the fiber reflect Rayleigh

  9. Critical current survival in the YBCO superconducting layer of a delaminated coated conductor

    NASA Astrophysics Data System (ADS)

    Feng, Feng; Fu, Qishu; Qu, Timing; Mu, Hui; Gu, Chen; Yue, Yubin; Wang, Linli; Yang, Zhirong; Han, Zhenghe; Feng, Pingfa

    2018-04-01

    A high-temperature superconducting coated conductor can be practically applied in electric equipment due to its favorable mechanical properties and critical current (I c) performance. However, the coated conductor can easily delaminate because of its poor stress tolerance along the thickness direction. It would be interesting to investigate whether the I c of the delaminated YBa2Cu3O7-δ (YBCO) layer can be preserved. In this study, coated conductor samples manufactured through the metal organic deposition route were delaminated by liquid nitrogen immersion. Delaminated samples, including the YBCO layer and silver stabilizer, were obtained. Delamination occurred inside the YBCO layer and near the YBCO-CeO2 interface, as suggested by the results of scanning electron microscopy (SEM) and x-ray diffraction. A scanning Hall probe system was employed to measure the I c distribution of the original sample and the delaminated sample. It was found that approximately 50% of the I c can be preserved after delamination, which was verified by I c measurements using the four-probe method. Dense and crack-free morphologies of the delaminated surfaces were observed by SEM, which accounts for the I c survival of the delaminated YBCO layer. The potential application of the delaminated sample in superconducting joints was discussed based on the oxygen diffusion estimation.

  10. Nucleation of stable superconductivity in YBCO-films

    NASA Astrophysics Data System (ADS)

    Kötzler, J.

    By means of the linear dynamic conductivity, inductively measured on epitaxial films between 30mHz and 30 MHz, the transition line T g (B) to generic superconductivity is studied in fields between B=0 and 19T. It follows closely the melting line T m (B) described recently in terms of a blowout of thermal vortex loops in clean materials. The critical exponents of the correlation length and time near T g (B), however, enem to be dominated by some intrinsic disorder. Columnar defects produced by heavy-ion irradiation up to field-equivalent-doses of B ϕ =10T lead to adisappointing reduction of T g (B→0) while for B>B ϕ the generic line of the pristine film is recovered. These novel results are also discussed in terms of a loop-driven destruction of generic superconductivity.

  11. The use of metalorganics in the preparation of semiconductor materials. VIII - Feasibility studies of the growth of Group III-Group V compounds of boron by MOCVD

    NASA Technical Reports Server (NTRS)

    Manasevit, H. M.; Hewitt, W. B.; Nelson, A. J.; Mason, A. R.

    1989-01-01

    The MOCVD growth of B-As and B-P films on Si, sapphire, and Si-on-sapphire substrates is described; in this process, trimethylborane (TMB) or triethylborane (TEB) is pyrolyzed in the presence of AsH3 or PH3 in an H2 atmosphere. The procedures employed are outlined, and the results are presented in graphs, tables, and micrographs. It is found that the growth rate of the primarily amorphous films is dependent on the TMB or TEB concentration but approximately constant for TEB and AsH3 at 550-900 C. The nominal compositions of films grown using TMB are given as B(12-16)As2 and B(1-1.3)P. Carbon impurities and significant stress, bowing, and crazing are observed in the films grown on Si substrates, with the highest carbon content in the films grown from TMB and PH3.

  12. Influence of Natural Convection and Thermal Radiation Multi-Component Transport in MOCVD Reactors

    NASA Technical Reports Server (NTRS)

    Lowry, S.; Krishnan, A.; Clark, I.

    1999-01-01

    The influence of Grashof and Reynolds number in Metal Organic Chemical Vapor (MOCVD) reactors is being investigated under a combined empirical/numerical study. As part of that research, the deposition of Indium Phosphide in an MOCVD reactor is modeled using the computational code CFD-ACE. The model includes the effects of convection, conduction, and radiation as well as multi-component diffusion and multi-step surface/gas phase chemistry. The results of the prediction are compared with experimental data for a commercial reactor and analyzed with respect to the model accuracy.

  13. Frequency and Temperature Dependent Dielectric Properties of Free-standing Strontium Titanate Thin Films.

    NASA Astrophysics Data System (ADS)

    Dalberth, Mark J.; Stauber, Renaud E.; Anderson, Britt; Price, John C.; Rogers, Charles T.

    1998-03-01

    We will report on the frequency and temperature dependence of the complex dielectric function of free-standing strontium titanate (STO) films. STO is an incipient ferroelectric with electric-field tunable dielectric properties of utility in microwave electronics. The films are grown epitaxially via pulsed laser deposition on a variety of substrates, including lanthanum aluminate (LAO), neodymium gallate (NGO), and STO. An initial film of yttrium barium cuprate (YBCO) is grown on the substrate, followed by deposition of the STO layer. Following deposition, the sacrificial YBCO layer is chemically etched away in dilute nitric acid, leaving the substrate and a released, free-standing STO film. Coplanar capacitor structures fabricated on the released films allow us to measure the dielectric response. We observe a peak dielectric function in excess of 5000 at 35K, change in dielectric constant of over a factor of 8 for 10Volt/micron electric fields, and temperature dependence above 50K that is very similar to bulk material. The dielectric loss shows two peaks, each with a thermally activated behavior, apparently arising from two types of polar defects. We will discuss the correlation between dielectric properties, growth conditions, and strain in the free-standing STO films.

  14. Progress in MOCVD growth of HgCdTe epilayers for HOT infrared detectors

    NASA Astrophysics Data System (ADS)

    Kebłowski, A.; Gawron, W.; Martyniuk, P.; Stepień, D.; Kolwas, K.; Piotrowski, J.; Madejczyk, P.; Kopytko, M.; Piotrowski, A.; Rogalski, A.

    2016-05-01

    In this paper we present progress in MOCVD growth of (100) HgCdTe epilayers achieved recently at the Institute of Applied Physics, Military University of Technology and Vigo System S.A. It is shown that MOCVD technology is an excellent tool in fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor doping and without post grown annealing. Particular progress has been achieved in the growth of (100) HgCdTe epilayers for long wavelength infrared photoconductors operated in HOT conditions. The (100) HgCdTe photoconductor optimized for 13-μm attain detectivity equal to 6.5x109 Jones and therefore outperform its (111) counterpart. The paper also presents technological progress in fabrication of MOCVD-grown (111) HgCdTe barrier detectors. The barrier device performance is comparable with state-of-the-art of HgCdTe photodiodes. The detectivity of HgCdTe detectors is close to the value marked HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07".

  15. MOCVD process technology for affordable, high-yield, high-performance MESFET structures. Phase 3: MIMIC

    NASA Astrophysics Data System (ADS)

    1993-01-01

    Under the MIMIC Program, Spire has pursued improvements in the manufacturing of low cost, high quality gallium arsenide MOCVD wafers for advanced MIMIC FET applications. As a demonstration of such improvements, Spire was tasked to supply MOCVD wafers for comparison to MBE wafers in the fabrication of millimeter and microwave integrated circuits. In this, the final technical report for Spire's two-year MIMIC contract, we report the results of our work. The main objectives of Spire's MIMIC Phase 3 Program, as outlined in the Statement of Work, were as follows: Optimize the MOCVD growth conditions for the best possible electrical and morphological gallium arsenide. Optimization should include substrate and source qualification as well as determination of the optimum reactor growth conditions; Perform all work on 75 millimeter diameter wafers, using a reactor capable of at least three wafers per run; and Evaluate epitaxial layers using electrical, optical, and morphological tests to obtain thickness, carrier concentration, and mobility data across wafers.

  16. Vacuum MOCVD fabrication of high efficience cells

    NASA Technical Reports Server (NTRS)

    Partain, L. D.; Fraas, L. M.; Mcleod, P. S.; Cape, J. A.

    1985-01-01

    Vacuum metal-organic-chemical-vapor-deposition (MOCVD) is a new fabrication process with improved safety and easier scalability due to its metal rather than glass construction and its uniform multiport gas injection system. It uses source materials more efficiently than other methods because the vacuum molecular flow conditions allow the high sticking coefficient reactants to reach the substrates as undeflected molecular beams and the hot chamber walls cause the low sticking coefficient reactants to bounce off the walls and interact with the substrates many times. This high source utilization reduces the materials costs power device and substantially decreases the amounts of toxic materials that must be handled as process effluents. The molecular beams allow precise growth control. With improved source purifications, vacuum MOCVD has provided p GaAs layers with 10-micron minority carrier diffusion lengths and GaAs and GaAsSb solar cells with 20% AMO efficiencies at 59X and 99X sunlight concentration ratios. Mechanical stacking has been identified as the quickest, most direct and logical path to stacked multiple-junction solar cells that perform better than the best single-junction devices. The mechanical stack is configured for immediate use in solar arrays and allows interconnections that improve the system end-of-life performance in space.

  17. Hardware Modifications to the US Army Research Laboratory’s Metalorganic Chemical Vapor Deposition (MOCVD) System for Optimization of Complex Oxide Thin Film Fabrication

    DTIC Science & Technology

    2015-04-01

    studies on flow and thermal fields in MOCVD reactor. Chinese Science Bulletin. 2010;55:560–566. 36. Hampdensmith MJ, Kodas TT. Chemical vapor...Chemistry. 1995;19727–750. 47. Xu CY, Hampdensmith MJ, Kodas TT. Aerosol-assisted chemical-vapor- deposition (AACVD) of binary alloy (AGXPD1-X, CUXPD1-X

  18. Research on resistance characteristics of YBCO tape under short-time DC large current impact

    NASA Astrophysics Data System (ADS)

    Zhang, Zhifeng; Yang, Jiabin; Qiu, Qingquan; Zhang, Guomin; Lin, Liangzhen

    2017-06-01

    Research of the resistance characteristics of YBCO tape under short-time DC large current impact is the foundation of the developing DC superconducting fault current limiter (SFCL) for voltage source converter-based high voltage direct current system (VSC-HVDC), which is one of the valid approaches to solve the problems of renewable energy integration. SFCL can limit DC short-circuit and enhance the interrupting capabilities of DC circuit breakers. In this paper, under short-time DC large current impacts, the resistance features of naked tape of YBCO tape are studied to find the resistance - temperature change rule and the maximum impact current. The influence of insulation for the resistance - temperature characteristics of YBCO tape is studied by comparison tests with naked tape and insulating tape in 77 K. The influence of operating temperature on the tape is also studied under subcooled liquid nitrogen condition. For the current impact security of YBCO tape, the critical current degradation and top temperature are analyzed and worked as judgment standards. The testing results is helpful for in developing SFCL in VSC-HVDC.

  19. New method for introducing nanometer flux pinning centers into single domain YBCO bulk superconductors

    NASA Astrophysics Data System (ADS)

    Yang, W. M.; Wang, Miao

    2013-10-01

    Single domain YBCO superconductors with different additions of Bi2O3 have been fabricated by top seeded infiltration and growth process (TSIG). The effect of Bi2O3 additions on the growth morphology, microstructure and levitation force of the YBCO bulk superconductor has been investigated. The results indicate that single domain YBCO superconductors can be fabricated with the additions of Bi2O3 less than 2 wt%; Bi2O3 can be reacted with Y2BaCuO5 and liquid phase and finally form Y2Ba4CuBiOx(YBi2411) nanoscale particles; the size of the YBi2411 particles is about 100 nm, which can act as effective flux pinning centers. It is also found that the levitation force of single domain YBCO bulks is increasing from 13 N to 34 N and decreasing to 11 N with the increasing of Bi2O3 addition from 0.1 wt% to 0.7 wt% and 2 wt%. This result is helpful for us to improve the physical properties of REBCO bulk superconductors.

  20. Physical vapor deposition and metalorganic chemical vapor deposition of yttria-stabilized zirconia thin films

    NASA Astrophysics Data System (ADS)

    Kaufman, David Y.

    Two vapor deposition techniques, dual magnetron oblique sputtering (DMOS) and metalorganic chemical vapor deposition (MOCVD), have been developed to produce yttria-stabilized zirconia (YSZ) films with unique microstructures. In particular, biaxially textured thin films on amorphous substrates and dense thin films on porous substrates have been fabricated by DMOS and MOCVD, respectively. DMOS YSZ thin films were deposited by reactive sputtering onto Si (native oxide surface) substrates positioned equidistant between two magnetron sources such that the fluxes arrived at oblique angles with respect to the substrate normal. Incident fluxes from two complimentary oblique directions were necessary for the development of biaxial texture. The films displayed a strong [001] out-of-plane orientation with the <110> direction in the film aligned with the incident flux. Biaxial texture improved with increasing oblique angle and film thickness, and was stronger for films deposited with Ne than with Ar. The films displayed a columnar microstructure with grain bundling perpendicular to the projected flux direction, the degree of which increased with oblique angle and thickness. The texture decreased by sputtering at pressures at which the flux of sputtered atoms was thermalized. These results suggested that grain alignment is due to directed impingement of both sputtered atoms and reflected energetic neutrals. The best texture, a {111} phi FWHM of 23°, was obtained in a 4.8 mum thick film deposited at an oblique angle of 56°. MOCVD YSZ thin films were deposited in a vertical cold-wall reactor using Zr(tmhd)4 and Y(tmhd)3 precursors. Fully stabilized YSZ films with 9 mol% could be deposited by controlling the bubbler temperatures. YSZ films on Si substrates displayed a transition at 525°C from surface kinetic limited growth, with an activation energy of 5.5 kJ/mole, to mass transport limited growth. Modifying the reactor by lowering the inlet height and introducing an Ar baffle

  1. A K-band Frequency Agile Microstrip Bandpass Filter using a Thin Film HTS/Ferroelectric/dielectric Multilayer Configuration

    NASA Technical Reports Server (NTRS)

    Subramanyam, Guru; VanKeuls, Fred; Miranda, Felix A.

    1998-01-01

    We report on YBa2Cu3O(7-delta) (YBCO) thin film/SrTiO3 (STO) thin film K-band tunable bandpass filters on LaAlO3 (LAO) dielectric substrates. The 2 pole filter has a center frequency of 19 GHz and a 4% bandwidth. Tunability is achieved through the non-linear dc electric field dependence of the relative dielectric constant of STO(epsilon(sub rSTO). A large tunability ((Delta)f/f(sub 0) = (f(sub Vmax) - f(sub 0)/f(sub 0), where f(sub 0) is the center frequency of the filter at no bias and f(sub Vmax) is the center frequency of the filter at the maximum applied bias) of greater than 10% was obtained in YBCO/STO/LAO microstrip bandpass filters operating below 77 K. A center frequency shift of 2.3 GHz (i.e., a tunability factor of approximately 15%) was obtained at a 400 V bipolar dc bias, and 30 K, with minimal degradation in the insertion loss of the filter. This paper addresses design, fabrication and testing of tunable filters based on STO ferroelectric thin films. The performance of the YBCO/STO/LAO filters is compared to that of gold/STO/LAO counterparts.

  2. Observation of Sinusoidal Voltage Behaviour in Silver Doped YBCO

    NASA Astrophysics Data System (ADS)

    Altinkok, Atilgan; Olutas, Murat; Kilic, Kivilcim; Kilic, Atilla

    The influence of bi-directional square wave (BSW) current was investigated on the evolution of the V - t curves at different periods (P) , temperatures and external magnetic fields. It was observed that slow transport relaxation measurements result in regular sinusoidal voltage oscillations which were discussed mainly in terms of the dynamic competition between pinning and depinning.The symmetry in the voltage oscillations was attributed to the elastic coupling between the flux lines and the pinning centers along grain boundaries and partly inside the grains. This case was also correlated to the equality between flux entry and exit along the YBCO/Ag sample during regular oscillations. It was shown that the voltage oscillations can be described well by an empirical expression V (t) sin(wt + φ) . We found that the phase angle φgenerally takes different values for the repetitive oscillations. Fast Fourier Transform analysis of the V - t oscillations showed that the oscillation period is comparable to that (PI) of the BSW current. This finding suggests a physical mechanism associated with charge density waves (CDWs), and, indeed, the weakly pinned flux line system in YBCO/Ag resembles the general behavior of CDWs. At certain values of PI, amplitude of BSW current, H and T, the YBCO/Ag sample behaves like a double-integrator, since it converts the BSW current to sinusoidal voltage oscillations in time.

  3. The Chemical Vapor Deposition of Thin Metal Oxide Films

    NASA Astrophysics Data System (ADS)

    Laurie, Angus Buchanan

    1990-01-01

    Chemical vapor deposition (CVD) is an important method of preparing thin films of materials. Copper (II) oxide is an important p-type semiconductor and a major component of high T_{rm c} superconducting oxides. By using a volatile copper (II) chelate precursor, copper (II) bishexafluoroacetylacetonate, it has been possible to prepare thin films of copper (II) oxide by low temperature normal pressure metalorganic chemical vapor deposition. In the metalorganic CVD (MOCVD) production of oxide thin films, oxygen gas saturated with water vapor has been used mainly to reduce residual carbon and fluorine content. This research has investigated the influence of water-saturated oxygen on the morphology of thin films of CuO produced by low temperature chemical vapor deposition onto quartz, magnesium oxide and cubic zirconia substrates. ZnO is a useful n-type semiconductor material and is commonly prepared by the MOCVD method using organometallic precursors such as dimethyl or diethylzinc. These compounds are difficult to handle under atmospheric conditions. In this research, thin polycrystalline films of zinc oxide were grown on a variety of substrates by normal pressure CVD using a zinc chelate complex with zinc(II) bishexafluoroacetylacetonate dihydrate (Zn(hfa)_2.2H _2O) as the zinc source. Zn(hfa) _2.2H_2O is not moisture - or air-sensitive and is thus more easily handled. By operating under reduced-pressure conditions (20-500 torr) it is possible to substantially reduce deposition times and improve film quality. This research has investigated the reduced-pressure CVD of thin films of CuO and ZnO. Sub-micron films of tin(IV) oxide (SnO _2) have been grown by normal pressure CVD on quartz substrates by using tetraphenyltin (TPT) as the source of tin. All CVD films were characterized by X-ray powder diffraction (XRPD), scanning electron microscopy (SEM) and electron probe microanalysis (EPMA).

  4. Metal-organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films

    NASA Technical Reports Server (NTRS)

    Macinnes, Andrew N.; Cleaver, William M.; Barron, Andrew R.; Power, Michael B.; Hepp, Aloysius F.

    1992-01-01

    The dimeric indium thiolate /(t Bu)2In(mu-S sup t Bu)/2 has been used as a single-source precursor for the MOCVD of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the nonequilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by TEM, with associated energy-dispersive X-ray analysis and X-ray photoelectron spectroscopy.

  5. MOCVD growth of vertically aligned InGaN nanowires

    NASA Astrophysics Data System (ADS)

    Kuo, H. C.; Su Oh, Tae; Ku, P.-C.

    2013-05-01

    In this work, we report the growth of vertically aligned bulk InGaN nanowires (NWs) on r-plane sapphire substrate by metal organic chemical vapor deposition (MOCVD). Through the optimization process of growth conditions, such as growth temperature and pressure, we obtained high density InGaN NWs consisting of one (0001) polar- and two equivalent {1101} semi-polar planes. We have shown the highest InGaN NWs wire density of 8×108 cm-2,with an average diameter of 300 nm and a length of 2 μm. From results of photoluminescence (PL) at 30 K and 300 K, we observed the intense and broad emission peak from InGaN NWs at around 595 nm, and confirmed that the luminescence could be tuned from 580 nm to 660 nm by controlling the indium flow (TMIn) rate. Our results indicate that MOCVD-grown InGaN NWs can be effective absorbers of the blue-green range of solar spectrum and may be one of the good candidates for high efficiency photovoltaic devices targeting at blue-green photons.

  6. Maximum permissible voltage of YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Wen, J.; Lin, B.; Sheng, J.; Xu, J.; Jin, Z.; Hong, Z.; Wang, D.; Zhou, H.; Shen, X.; Shen, C.

    2014-06-01

    Superconducting fault current limiter (SFCL) could reduce short circuit currents in electrical power system. One of the most important thing in developing SFCL is to find out the maximum permissible voltage of each limiting element. The maximum permissible voltage is defined as the maximum voltage per unit length at which the YBCO coated conductors (CC) do not suffer from critical current (Ic) degradation or burnout. In this research, the time of quenching process is changed and voltage is raised until the Ic degradation or burnout happens. YBCO coated conductors test in the experiment are from American superconductor (AMSC) and Shanghai Jiao Tong University (SJTU). Along with the quenching duration increasing, the maximum permissible voltage of CC decreases. When quenching duration is 100 ms, the maximum permissible of SJTU CC, 12 mm AMSC CC and 4 mm AMSC CC are 0.72 V/cm, 0.52 V/cm and 1.2 V/cm respectively. Based on the results of samples, the whole length of CCs used in the design of a SFCL can be determined.

  7. Design study of an YBCO-coated beam screen for the super proton-proton collider bending magnets

    NASA Astrophysics Data System (ADS)

    Gan, Pingping; Zhu, Kun; Fu, Qi; Li, Haipeng; Lu, Yuanrong; Easton, Matt; Liu, Yudong; Tang, Jingyu; Xu, Qingjin

    2018-04-01

    In order to reduce the beam impedance and refrigeration power dramatically, we have designed a high temperature superconductor (HTS) coated beam screen to screen the cold chamber walls of the super proton-proton collider bending magnets from beam-induced heat loads. It employs an absorber, inspired by the future circular collider studies, to absorb the immense synchrotron radiation power of 12.8 W/m emitted from the 37.5 TeV proton beams. Such a structure has the advantage of decreasing the electron cloud effect and improving the beam vacuum. We have compared the critical magnetic field and current density and accessibility of two potential HTS materials for the beam screen, TlBa2Ca2Cu3O9-δ (Tl-1223) and Yttrium Barium Copper Oxide (YBCO) and finally chose YBCO for coating. The beam screen is tentatively designed to work at 55-70 K because of the limited development of the YBCO material. The thermal analysis with oxygen cooling fluid indicates that the YBCO conductor can maintain its superconductivity even if the synchrotron radiation hits the YBCO-coated surface and the mechanical analysis shows that the structure has the ability to resist the Lorenz force during magnet quenches.

  8. Transport performance of a HTS current lead prepared by the TFA-MOD processed YBCO tapes

    NASA Astrophysics Data System (ADS)

    Shiohara, K.; Sakai, S.; Ohki, S.; Yamada, Y.; Tachikawa, K.; Koizumi, T.; Aoki, Y.; Hikichi, Y.; Nishioka, J.; Hasegawa, T.

    2009-10-01

    A superconducting current lead has been prepared using 12 tapes of the trifluoroacetates - metal organic deposition (TFA-MOD) processed Y 1Ba 2Cu 3O 7-δ (YBCO) coated conductors with critical current ( I c) of about 100 A at 77 K in self-field. The tapes are 4.5 mm in width, 220 mm in length and about 120 μm in overall thickness. The 1 μm thick superconducting YBCO layer was formed through the TFA-MOD process on Hastelloy TM substrate tapes with two buffer oxide layers of Gd 2Zr 2O 7 (GZO) and CeO 2. The 12 YBCO tapes were arrayed on the both sides (six tapes on each side) of a stainless steel board with 3 mm in thickness for a board type shape. They were similarly soldered to copper caps at the both ends. The transport current of 1000 A was stably applied for 10 min in the liquid nitrogen temperature without any voltage generation in all tapes. Although some voltage in some YBCO tapes generated at the applied currents of about 1100 A, the transport current of 1200 A was successfully applied without quenching. The voltage between both copper caps linearly increased with increasing the transport current, and it was about 300 μV at an applied current of 1000 A. A low joint resistance between the YBCO tapes and the copper caps resulted in small amounts of the Joule heating at the joints when 1000 A was applied. The overall (effective) thermal conductivity of the current leads composed of YBCO tapes and the stainless steel board was much lower than that of Non-superconducting current leads. Therefore, the present current leads with small heat leakage seemed to be practically promising for superconducting magnets.

  9. (111)-oriented Pb(Zr ,Ti)O3 films deposited on SrRuO3/Pt electrodes: Reproducible preparation by metal organic chemical vapor deposition, top electrode influence, and reliability

    NASA Astrophysics Data System (ADS)

    Menou, Nicolas; Funakubo, Hiroshi

    2007-12-01

    (111)-textured Pb(Zr0.4Ti0.6)O3 films (thickness of ˜120nm) were deposited on (111)-oriented SrRuO3 bottom electrodes by pulse metal organic chemical vapor deposition (MOCVD). PZT single phase was evidenced over a large range of Pb precursor input rate into the MOCVD chamber. In this process window, the good control of the (111) texture of PZT films was confirmed. It is shown that the control of both the composition and orientation of PZT films leads to reproducible electric properties (Pr, Vc, resistance to fatigue) across the process window. Furthermore, the impact of the top electrode chemical nature, elaboration process, and annealing process upon the electric properties was studied systematically.

  10. Microstructure and property correlations in high-temperature superconductors

    NASA Astrophysics Data System (ADS)

    Kalyanaraman, Ramakrishnan

    1998-11-01

    The work in this dissertation is intended at developing high quality device gradefilms of the high temperature (high-Tsbc) superconductor, Yttrium Barium Copper Oxide (YBCO), on MgO(001) substrates. Three approaches have been used to achieve the above goal, (i) The use of a SrTiOsb3 buffer layer, (ii) The use of Ag to enhance the growth of YBCO films and (iii) Investigation of the atomic structure-property correlations of low-angle grain boundaries in these films. Thin film heterostructures of YBCO/MgO and YBCO/SrTiOsb3/MgO were fabricated by pulsed laser deposition (PLD), using a 248 nm KrF excimer laser. Analysis of the structure and measurement of superconducting properties of the films were carried out to optimize the suitable conditions under each approach. The key findings were, (i) Single crystal-like SrTiOsb3 buffer layers can be grown and they give the highest JsbcYBCO films, (ii) An in-depth study of the role of Ag showed that it enhanced film growth of YBCO thereby improving its quality, and (iii) Low-angle boundaries in YBCO/MgO occur with two probable habit planes and the Jsbcs across them differ slightly. A systematic investigation of the crystalline quality of the SrTiOsb3 films deposited by PLD was performed as a function of oxygen partial pressure (pOsb2) and substrate temperature (Tsbc). The highest quality films were grown in the pOsb2 range of 0.1-1 mTorr at 750sp°C. The films had as-deposited x-ray diffraction rocking curve (omega) values of {˜}0.70sp° and Rutherford backscattering channeling yields (chisbmin) of 5% as compared to omega˜1.40sp° and chisbmin˜14% for the film deposited in 100 mTorr of pOsb2. The x-ray phi-scans showed epitaxial cube-on-cube alignment of the SrTiOsb3 films on MgO(001) substrates. Thermal annealing of the SrTiOsb3 films further improved the quality, and the 1 mTorr films gave omega{˜}0.13sp° and chisbmin˜2.0%. Transmission electron microscopy investigations (TEM) of these films showed that the defects in

  11. Mixed pinning landscape in nanoparticle-introduced YGdBa2Cu3Oy films grown by metal organic deposition

    NASA Astrophysics Data System (ADS)

    Miura, M.; Maiorov, B.; Baily, S. A.; Haberkorn, N.; Willis, J. O.; Marken, K.; Izumi, T.; Shiohara, Y.; Civale, L.

    2011-05-01

    We study the field (H) and temperature (T) dependence of the critical current density (Jc) and irreversibility field (Hirr) at different field orientations in Y0.77Gd0.23Ba2Cu3Oy with randomly distributed BaZrO3 nanoparticles (YGdBCO+BZO) and YBa2Cu3Oy (YBCO) films. Both MOD films have large RE2Cu2O5 (225) nanoparticles (˜80 nm in diameter) and a high density of twin boundaries (TB). In addition, YGdBCO+BZO films have a high density of BZO nanoparticles (˜25 nm in diameter). At high temperatures (T > 40 K), the superconducting properties, such as Jc, Hirr, and flux creep rates, are greatly affected by the BZO nanoparticles, while at low temperatures the superconducting properties of both the YBCO and YGdBCO+BZO films show similar field and temperature dependencies. In particular, while the Jc of YBCO films follow a power-law dependence (∝H-α) at all measured T, this dependence is only followed at low T for YGdBCO+BZO films. As a function of T, the YGdBCO+BZO film shows Jc(T,0.01T)~[1-(T/Tc)2]n with n ˜ 1.24 ± 0.05, which points to “δTc pinning.” We analyze the role of different types of defects in the different temperature regimes and find that the strong pinning of the BZO nanoparticles yields a higher Hirr and improved Jc along the c axis and at intermediate orientations at high T. The mixed pinning landscapes due to the presence of disorder of various dimensionalities have an important role in the improvement of in-field properties.

  12. Temperature dependence of superfluid density in YBa 2Cu 3O 7- δ and Y 0.7Ca 0.3Ba 2Cu 3O 7- δ thin films: A doping dependence study of the linear slope

    NASA Astrophysics Data System (ADS)

    Lai, L. S.; Juang, J. Y.; Wu, K. H.; Uen, T. M.; Gou, Y. S.

    2005-11-01

    By using a microstrip ring resonator to measure the temperature dependence of the in-plane magnetic penetration depth λ(T) in YBa2Cu3O7-δ (YBCO) and Y0.7Ca0.3Ba2Cu3O7-δ (Ca-YBCO) epitaxially grown thin films, the linear temperature dependence of the superfluid density ρs/m∗ ≡ 1/λ2(T) was observed from the under- to the overdoped regime at the temperatures below T/Tc ≈ 0.3 . For the underdoped regime of YBCO and Ca-YBCO thin films, the magnitude of the slope d(1/λ2(T))/dT is insensitive to doping, and it can be treated in the framework of projected d-density-wave model. Combining these slope values with the thermal conductivity measurements, the Fermi-liquid correction factor α2 from the Fermi-liquid model, suggested by Wen and Lee, was revealed here with various doping levels.

  13. Advanced light-scattering materials: Double-textured ZnO:B films grown by LP-MOCVD

    NASA Astrophysics Data System (ADS)

    Addonizio, M. L.; Spadoni, A.; Antonaia, A.

    2013-12-01

    Double-textured ZnO:B layers with enhanced optical scattering in both short and long wavelength regions have been successfully fabricated using MOCVD technique through a three step process. Growth of double-textured structures has been induced by wet etching on polycrystalline ZnO surface. Our double-layer structure consists of a first ZnO:B layer wet etched and subsequently used as substrate for a second ZnO:B layer deposition. Polycrystalline ZnO:B layers were etched by utilizing diluted solutions of fluoridic acid (HF), chloridric acid (HCl) and phosphoric acid (H3PO4) and their effect on surface morphology modification was systematically investigated. The morphology of the second deposited ZnO layer strongly depended on the surface properties of the etched ZnO first layer. Growth of cauliflower-like texture was induced by protrusions presence on the HCl etched surface. Optimized double-layer structure shows a cauliflower-like double texture with higher RMS roughness and increased spectral haze values in both short and long wavelength regions, compared to conventional pyramidal-like single texture. Furthermore, this highly scattering structure preserves excellent optical and electrical properties.

  14. Interplay between current driven ferromagnetism in charge ordered antiferromagnetic Pr0.5Ca0.5MnO3 and superconducting YBa2Cu3O7-δ thin film multilayer

    NASA Astrophysics Data System (ADS)

    Baisnab, Dipak Kumar; Sardar, Manas; Amaladass, E. P.; Vaidhyanathan, L. S.; Baskaran, R.

    2018-07-01

    Thin film multilayer heterostructure of alternate YBa2Cu3O7-δ (YBCO) and Pr0.5Ca0.5MnO3 (PCMO) with thickness of each layer ∼60 nm has been deposited on (100) oriented SrTiO3 substrate by Pulsed Laser Deposition technique. A half portion of the base YBCO layer was masked in situ using mechanical shadow mask and in the remaining half portion, five alternate layers of PCMO and YBCO thin films were deposited. Magnetoresistance measurements were carried out under externally applied magnetic field and injection current. A noticeable damped oscillation of the superconducting transition temperature (TC) of this multilayer with respect to magnetic field is seen. Curiously, the field at which the first minimum in TC occurs, decreases as an injection current is driven perpendicular/parallel to the multilayers. Both these phenomena indicate that ferromagnetic correlation can be induced in antiferromagnetic PCMO thin films by (1) external magnetic field, or (2) injection current. While (1) is well researched, our study indicates that ferromagnetism can be induced by small amount of current in PCMO thin films. This unusual behavior points towards the strongly correlated nature of electrons in PCMO.

  15. Process in manufacturing high efficiency AlGaAs/GaAs solar cells by MO-CVD

    NASA Technical Reports Server (NTRS)

    Yeh, Y. C. M.; Chang, K. I.; Tandon, J.

    1984-01-01

    Manufacturing technology for mass producing high efficiency GaAs solar cells is discussed. A progress using a high throughput MO-CVD reactor to produce high efficiency GaAs solar cells is discussed. Thickness and doping concentration uniformity of metal oxide chemical vapor deposition (MO-CVD) GaAs and AlGaAs layer growth are discussed. In addition, new tooling designs are given which increase the throughput of solar cell processing. To date, 2cm x 2cm AlGaAs/GaAs solar cells with efficiency up to 16.5% were produced. In order to meet throughput goals for mass producing GaAs solar cells, a large MO-CVD system (Cambridge Instrument Model MR-200) with a susceptor which was initially capable of processing 20 wafers (up to 75 mm diameter) during a single growth run was installed. In the MR-200, the sequencing of the gases and the heating power are controlled by a microprocessor-based programmable control console. Hence, operator errors can be reduced, leading to a more reproducible production sequence.

  16. Levitation forces of a bulk YBCO superconductor in gradient varying magnetic fields

    NASA Astrophysics Data System (ADS)

    Jiang, J.; Gong, Y. M.; Wang, G.; Zhou, D. J.; Zhao, L. F.; Zhang, Y.; Zhao, Y.

    2015-09-01

    The levitation forces of a bulk YBCO superconductor in gradient varying high and low magnetic fields generated from a superconducting magnet were investigated. The magnetic field intensity of the superconducting magnet was measured when the exciting current was 90 A. The magnetic field gradient and magnetic force field were both calculated. The YBCO bulk was cooled by liquid nitrogen in field-cooling (FC) and zero-field-cooling (ZFC) condition. The results showed that the levitation forces increased with increasing the magnetic field intensity. Moreover, the levitation forces were more dependent on magnetic field gradient and magnetic force field than magnetic field intensity.

  17. Development of a thick GdBCO and ZrO 2-doped GdBCO film with a high critical current on a PLD-CeO 2/IBAD-GZO metal substrate

    NASA Astrophysics Data System (ADS)

    Kinoshita, A.; Takahashi, K.; Kobayashi, H.; Yamada, Y.; Ibi, A.; Fukushima, H.; Konishi, M.; Miyata, S.; Shiohara, Y.; Kato, T.; Hirayama, T.

    2007-10-01

    In order to obtain a high critical current, Ic, we have fabricated a thick GdBa2Cu3O7-x (GdBCO) film by the pulsed laser deposition (PLD) method on a PLD-CeO2/ion-beam assisted deposition (IBAD)-Gd2Zr2O7 (GZO)/hastelloy metal substrate. The film of a 3.6 μm thickness exhibited the highest critical current of 522 A/cm at self-field and at 77 K. It was found that a low volume fraction of a-axis oriented grains was obtained in the thick GdBCO films, compared to YBa2Cu3O7-x (YBCO) films. The GdBCO films showed a higher critical current density (Jc), than YBCO films in all thicknesses from 0.2 to 3.6 μm. Furthermore, we have improved Ic in a magnetic field by the introduction of artificial pinning centers using a 5 mol% ZrO2-doped GdBCO target. In the measurement of angular dependence of Ic, which was much improved at 0°, the magnetic field was parallel to the c-axis. The Ic value at 3 T was 59.5 A/cm at 0° and showed a minimum of 42.3 A/cm at 82° for the film of a 2.3 μm thickness. The minimum value at 3 T in angular dependence of Ic was about five times higher than that of the YBCO film and two times higher than that of pure the GdBCO film.

  18. Preparation of thin-film (Ba(0.5),Sr(0.5))TiO3 by the laser ablation technique and electrical properties

    NASA Astrophysics Data System (ADS)

    Yoon, Soon-Gil; Lee, Jai-Chan; Safari, A.

    1994-09-01

    The chemical composition and electrical properties were investigated for epitaxially crystallized (Ba(0.5),Sr(0.5))TiO3 (BST) films deposited on Pt/MgO and YBa2Cu3O(7-x) (YBCO)/MgO substrates by the laser ablation technique. Rutherford backscattering spectroscopy analysis shows that thin films on Pt/MgO have almost the same stoichiometric composition as the target material. Films deposited at 600 C exhibited an excellent epitaxial growth, a dielectric constant of 430, and a dissipation factor of 0.02 at 10 kHz frequency. They have a charge storage density of 40 fC/sq micron at an applied electric field of 0.15 MV/cm. Leakage current density of BST thin films on Pt/MgO was smaller than on YBCO/MgO. Their leakage current density is about 0.8 microA/sq cm at an applied electric field of 0.15 MV/cm.

  19. Optical Properties of ZnCdS:I Orange and ZnSTe:I White Thin Film Phosphor for High Ra White LED

    NASA Astrophysics Data System (ADS)

    Fujii, Satoshi; Tasaki, Norio; Shinomura, Naohiko; Kurai, Satoshi; Yamada, Yoichi; Taguchi, Tsunemasa

    In order to develop visible thin film phosphors, we have for the first time prepared ZnCdS and ZnSTe doped with Iodine (I) using low-pressure MOCVD method. ZnCdS:I, of which Cd composition was calibrated to match the lattice constant to that of substrate and the band gap to absorption peak, showed a orange broad emission consist of yellow near band edge emission and red SA emission. Isoelectronic Te in ZnS indicates strong blue-green emissions, whilst I donor impurity in ZnS shows strong red SA emissions. A typical ZnSTe:I thin film shows two broad emission bands locating at around 500 and 680 nm, respectively, indicating Ra˜90. It was shown that high Ra thin film phosphor can be realized by single material (ZnSTe:I), and that MOCVD method is capable for controlling the thickness and doping profile to obtain uniform white emission pattern.

  20. Method for Improving Mg Doping During Group-III Nitride MOCVD

    DOEpatents

    Creighton, J. Randall; Wang, George T.

    2008-11-11

    A method for improving Mg doping of Group III-N materials grown by MOCVD preventing condensation in the gas phase or on reactor surfaces of adducts of magnesocene and ammonia by suitably heating reactor surfaces between the location of mixing of the magnesocene and ammonia reactants and the Group III-nitride surface whereon growth is to occur.

  1. Thin Film Multilayer Conductor/Ferroelectric Tunable Microwave Components for Communication Applications

    NASA Technical Reports Server (NTRS)

    Miranda, Felix A.; Romanofsky, Robert R.; VanKeuls, Frederick W.; Mueller, Carl H.; Treece, Randolph E.; Rivkin, Tania V.

    1997-01-01

    High Temperature Superconductor/Ferroelectric (HTS/FE ) thin film multilayered structures deposited onto dielectric substrates are currently being investigated for use in low loss, tunable microwave components for satellite and ground based communications. The main goal for this technology is to achieve maximum tunability while keeping the microwave losses as low as possible, so as to avoid performance degradation when replacing conventional technology (e.g., filters and oscillators) with HTS/FE components. Therefore, for HTS/FE components to be successfully integrated into current working systems, full optimization of the material and electrical properties of the ferroelectric films, without degrading those of the HTS film; is required. Hence, aspects such as the appropriate type of ferroelectric and optimization of the deposition conditions (e.g., deposition temperature) should be carefully considered. The tunability range as well as the microwave losses of the desired varactor (i.e., tunable component) are also dependent on the geometry chosen (e.g., parallel plate capacitor, interdigital capacitor, coplanar waveguide, etc.). In addition, the performance of the circuit is dependent on the location of the varactor in the circuit and the biasing circuitry. In this paper, we will present our results on the study of the SrTiO3/YBa2Cu3O(7-delta)/LaAl03 (STO/YBCO/LAO) and the Ba(x)Sr(1-x)TiO3/YBa2Cu3O(7-delta)/LaAl03(BSTO/YBCO/ILAO) HTS/FE multilayered structures. We have observed that the amount of variation of the dielectric constant upon the application of a dc electric field is closely related to the microstructure of the film. The largest tuning of the STO/YBCO/LAO structure corresponded to single-phased, epitaxial STO films deposited at 800 C and with a thickness of 500 nm. Higher temperatures resulted in interfacial degradation and poor film quality, while lower deposition temperatures resulted in films with lower dielectric constants, lower tunabilities, and

  2. Asymmetry of the velocity-matching steps in YBCO long Josephson junctions

    NASA Astrophysics Data System (ADS)

    Revin, L. S.; Pankratov, A. L.; Chiginev, A. V.; Masterov, D. V.; Parafin, A. E.; Pavlov, S. A.

    2018-04-01

    We carry out experimental and theoretical investigations into the effect of the vortex chain propagation on the current-voltage characteristics of YBa2Cu3O7-δ (YBCO) long Josephson junctions. Samples of YBCO Josephson junctions, fabricated on 24° [001]-tilt bicrystal substrates, have been measured. The improved technology has allowed us to observe and study the asymmetry of the current-voltage characteristics with opposite magnetic fields (Revin et al 2012 J. Appl. Phys. 114 243903), which we believe occurs due to anisotropy of bicrystal substrates (Kupriyanov et al (2013 JETP Lett. 95 289)). Specifically, we examine the flux-flow resonant steps versus the external magnetic field, and study the differential resistance and its relation to oscillation power for opposite directions of vortex propagation.

  3. Deposition of high quality YBa2Cu3O(7-delta) thin films over large areas by pulsed laser ablation with substrate scanning

    NASA Technical Reports Server (NTRS)

    Davis, M. F.; Wosik, J.; Forster, K.; Deshmukh, S. C.; Rampersad, H. R.

    1991-01-01

    The paper describes thin films deposited in a system where substrates are scanned over areas up to 3.5 x 3.5 cm through the stationary plume of an ablated material defined by an aperture. These YBCO films are deposited on LaAlO3 and SrTiO3 substrates with the thickness of 90 and 160 nm. Attention is focused on the main features of the deposition system: line focusing of the laser beam on the target; an aperture defining the area of the plume; computerized stepper motor-driven X-Y stage translating the heated sampler holder behind the plume-defining aperture in programmed patterns; and substrate mounting block with uniform heating at high temperatures over large areas. It is noted that the high degree of uniformity of the properties in each film batch illustrates that the technique of pulsed laser deposition can be applied to produce large YBCO films of high quality.

  4. XPS-nanocharacterization of organic layers electrochemically grafted on the surface of SnO2 thin films to produce a new hybrid material coating

    NASA Astrophysics Data System (ADS)

    Drevet, R.; Dragoé, D.; Barthés-Labrousse, M. G.; Chaussé, A.; Andrieux, M.

    2016-10-01

    This work presents the synthesis and the characterization of hybrid material thin films obtained by the combination of two processes. The electrochemical grafting of organic layers made of carboxyphenyl moieties is carried out from the reduction of a diazonium salt on tin dioxide (SnO2) thin films previously deposited on Si substrates by metal organic chemical vapor deposition (MOCVD). Since the MOCVD experimental parameters impact the crystal growth of the SnO2 layer (i.e. its morphology and its texturation), various electrochemical grafting models can occur, producing different hybrid materials. In order to evidence the efficiency of the electrochemical grafting of the carboxyphenyl moieties, X-ray Photoelectron Spectroscopy (XPS) is used to characterize the first nanometers in depth of the synthesized hybrid material layer. Then three electrochemical grafting models are proposed.

  5. Influence of Al content on the properties of ternary Al{sub 2x}In{sub 2−2x}O{sub 3} alloy films prepared on YSZ (1 1 1) substrates by MOCVD

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Feng, Xianjin; Zhao, Cansong; Li, Zhao

    2015-10-15

    Highlights: • Al{sub 2x}In{sub 2−2x}O{sub 3} films were prepared on the Y-stabilized ZrO{sub 2} (1 1 1) substrates by MOCVD at 700 °C. • A phase transition from the bixbyite In{sub 2}O{sub 3} structure to the amorphous structure was observed. • The lowest resistivity of 4.7 × 10{sup −3} Ω cm was obtained for the Al{sub 0.4}In{sub 1.6}O{sub 3} film. • Tunable optical band gap from 3.7 to 4.8 eV was obtained. - Abstract: The ternary Al{sub 2x}In{sub 2−2x}O{sub 3} films with different Al contents of x [Al/(Al + In) atomic ratio] have been fabricated on the Y-stabilized ZrO{sub 2}more » (1 1 1) substrates by metal organic chemical vapor deposition at 700 °C. The structural, electrical and optical properties of the films as a result of different Al contents (x = 0.1–0.9) were investigated in detail. With the increase of Al content from 10% to 90%, a phase transition from the bixbyite In{sub 2}O{sub 3} structure with a single orientation along (1 1 1) to the amorphous structure was observed. The minimum resistivity of 4.7 × 10{sup −3} Ω cm, a carrier concentration of 1.4 × 10{sup 20} cm{sup −3} and a Hall mobility of 9.8 cm{sup 2} v{sup −1} s{sup −1} were obtained for the sample with x = 0.2. The average transmittances for the Al{sub 2x}In{sub 2−2x}O{sub 3} films in the visible range were all over 78% and the optical band gap of the films could be tuned from 3.7 to 4.8 eV.« less

  6. Analysis of YBCO high temperature superconductor doped with silver nanoparticles and carbon nanotubes using Williamson-Hall and size-strain plot

    NASA Astrophysics Data System (ADS)

    Dadras, Sedigheh; Davoudiniya, Masoumeh

    2018-05-01

    This paper sets out to investigate and compare the effects of Ag nanoparticles and carbon nanotubes (CNTs) doping on the mechanical properties of Y1Ba2Cu3O7-δ (YBCO) high temperature superconductor. For this purpose, the pure and doped YBCO samples were synthesized by sol-gel method. The microstructural analysis of the samples is performed using X-ray diffraction (XRD). The crystalline size, lattice strain and stress of the pure and doped YBCO samples were estimated by modified forms of Williamson-Hall analysis (W-H), namely, uniform deformation model (UDM), uniform deformation stress model (UDSM) and the size-strain plot method (SSP). These results show that the crystalline size, lattice strain and stress of the YBCO samples declined by Ag nanoparticles and CNTs doping.

  7. Photoreflectance for in-situ characterization of MOCVD growth of semiconductors under micro-gravity conditions

    NASA Technical Reports Server (NTRS)

    Pollak, Fred H.

    1990-01-01

    A contactless electromodulation technique of photoreflectance (PR) was developed for in-situ monitoring of metal-organic chemical vapor deposition (MOCVD) semiconductor growth for micro-gravity applications. PR can be employed in a real MOCVD reactor including rotating substrate (approximately 500 rev/min) in flowing gases and through a diffuser plate. Measurements on GaAs and Ga(0.82)Al(0.18)As were made up to 690 C. The direct band gaps of In(x)Ga(1-x)As (x = 0.07 and 0.16) were evaluated up to 600 C. In order to address the question of real time measurement, the spectra of the direct gap of GaAs at 650 C was obtained in 30 seconds and 15 seconds seems feasible.

  8. Suppression of Mg propagation into subsequent layers grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Agarwal, Anchal; Tahhan, Maher; Mates, Tom; Keller, Stacia; Mishra, Umesh

    2017-01-01

    Low temperature (LT) flow modulation epitaxy (FME) or "pulsed" growth was successfully used to prevent magnesium from Metalorganic Chemical Vapor Deposition (MOCVD) grown p-GaN:Mg layers riding into subsequently deposited n-type layers. Mg concentration in the subsequent layers was lowered from ˜1 × 1018 cm-3 for a medium temperature growth at 950 °C to ˜1 × 1016 cm-3 for a low temperature growth at 700 °C via FME. The slope of the Mg concentration drop in the 700 °C FME sample was 20 nm/dec—the lowest ever demonstrated by MOCVD. For growth on Mg implanted GaN layers, the drop for a medium temperature regrowth at 950 °C was ˜10 nm/dec compared to >120 nm/dec for a high temperature regrowth at 1150 °C. This drop-rate obtained at 950 °C or lower was maintained even when the growth temperature in the following layers was raised to 1150 °C. A controlled silicon doping series using LT FME was also demonstrated with the lowest and highest achieved doping levels being 5 × 1016 cm-3 and 6 × 1019 cm-3, respectively.

  9. Process for forming epitaxial perovskite thin film layers using halide precursors

    DOEpatents

    Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

    2001-01-01

    A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

  10. Fabrication of InP-pentacene inorganic-organic hybrid heterojunction using MOCVD grown InP for photodetector application

    NASA Astrophysics Data System (ADS)

    Sarkar, Kalyan Jyoti; Pal, B.; Banerji, P.

    2018-04-01

    We fabricated inorganic-organic hybrid heterojunction between indium phosphide (InP) and pentacene for photodetector application. InP layer was grown on n-Si substrate by atmospheric pressure metal organic chemical vapour deposition (MOCVD) technique. Morphological properties of InP and pentacene thin film were characterized by atomic force microscopy (AFM). Current-voltage characteristics were investigated in dark and under illumination condition at room temperature. During illumination, different wavelengths of visible and infrared light source were employed to perform the electrical measurement. Enhancement of photocurrent was observed with decreasing in wavelength of incident photo radiation. Ideality factor was found to be 1.92. High rectification ratio of 225 was found at ± 3 V in presence of infrared light source. This study provides new insights of inorganic-organic hybrid heterojunction for broadband photoresponse in visible to near infrared (IR) region under low reverse bias condition.

  11. Superconducting Electronic Film Structures

    DTIC Science & Technology

    1991-02-14

    diameter YBCO films are being tested as the endplates in a cylindrical dielectric resonator. The Q and phase noise of the 15 dielectric resonator will...vortex state. Magnus force ne(v, -VL)x O/C is balanced by a drag force an- Josephson 9 demonstrated that the motion of flux vor- tiparallel to the...age of the same sign as in the normal metal [Fig. 3(b)i. the Magnus force Thus a reversal of the sign of the Hall voltage upon enter- "Se ing the mixed

  12. Room-temperature growth of thin films of niobium on strontium titanate (0 0 1) single-crystal substrates for superconducting joints

    NASA Astrophysics Data System (ADS)

    Shimizu, Yuhei; Tonooka, Kazuhiko; Yoshida, Yoshiyuki; Furuse, Mitsuho; Takashima, Hiroshi

    2018-06-01

    With the eventual aim of forming joints between superconducting wires of YBa2Cu3O7-δ (YBCO), thin films of Nb were grown at room-temperature on SrTiO3 (STO) (0 0 1), a single-crystal substrate that shows good lattice matching with YBCO. The crystallinity, surface morphology, and superconducting properties of the Nb thin films were investigated and compared with those of similar films grown on a silica glass substrate. The Nb thin films grew with an (hh0) orientation on both substrates. The crystallinity of the Nb thin films on the STO substrate was higher than that on the silica glass substrate. X-ray diffraction measurements and observation of the surface morphology by atomic-force microscopy indicated that Nb grew in the plane along the [1 0 0] and [0 1 0] directions of the STO substrate. This growth mode relaxes strain between Nb and STO, and is believed to lead to the high crystallinity observed. As a result, the Nb thin films on the STO substrates showed lower electric resistivity and a higher superconducting transition temperature than did those on the silica glass substrates. The results of this study should be useful in relation to the production of superconducting joints.

  13. Epitaxial Ge Solar Cells Directly Grown on Si (001) by MOCVD Using Isobutylgermane

    NASA Astrophysics Data System (ADS)

    Kim, Youngjo; Kim, Kangho; Lee, Jaejin; Kim, Chang Zoo; Kang, Ho Kwan; Park, Won-Kyu

    2018-03-01

    Epitaxial Ge layers have been grown on Si (001) substrates by metalorganic chemical vapor deposition (MOCVD) using an isobutylgermane (IBuGe) metalorganic source. Low and high temperature two-step growth and post annealing techniques are employed to overcome the lattice mismatch problem between Ge and Si. It is demonstrated that high quality Ge epitaxial layers can be grown on Si (001) by using IBuGe with surface RMS roughness of 2 nm and an estimated threading dislocation density of 4.9 × 107 cm -2. Furthermore, single-junction Ge solar cells have been directly grown on Si substrates with an in situ MOCVD growth. The epitaxial Ge p- n junction structures are investigated with transmission electron microscopy and electrochemical C- V measurements. As a result, a power conversion efficiency of 1.69% was achieved for the Ge solar cell directly grown on Si substrate under AM1.5G condition.

  14. Pilot-scale electron cyclotron resonance-metal organic chemical vapor deposition system for the preparation of large-area fluorine-doped SnO{sub 2} thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jeon, Bup Ju; Hudaya, Chairul; Center for Energy Convergence, Green City Research Institute, Korea Institute of Science and Technology, Hwarangno 14 gil 5, Seoul 136-791

    2016-05-15

    The authors report the surface morphology, optical, electrical, thermal and humidity impacts, and electromagnetic interference properties of fluorine-doped tin oxide (SnO{sub 2}:F or “FTO”) thin films on a flexible polyethylene terephthalate (PET) substrate fabricated by a pilot-scale electron cyclotron resonance–metal organic chemical vapor deposition (PS ECR-MOCVD). The characteristics of large area FTO thin films were compared with a commercially available transparent conductive electrode made of tin-doped indium oxide (ITO), prepared with an identical film and PET thickness of 125 nm and 188 μm, respectively. The results revealed that the as-prepared FTO thin films exhibited comparable performances with the incumbent ITO films, includingmore » a high optical transmittance of 97% (substrate-subtracted), low electrical resistivity of about 5 × 10{sup −3} Ω cm, improved electrical and optical performances due to the external thermal and humidity impact, and an excellent shielding effectiveness of electromagnetic interference of nearly 2.3 dB. These excellent performances of the FTO thin films were strongly attributed to the design of the PS ECR-MOCVD, which enabled a uniform plasma environment resulting from a proper mixture of electromagnetic profiles and microwave power.« less

  15. Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

    NASA Astrophysics Data System (ADS)

    Bryan, Isaac; Bryan, Zachary; Washiyama, Shun; Reddy, Pramod; Gaddy, Benjamin; Sarkar, Biplab; Breckenridge, M. Hayden; Guo, Qiang; Bobea, Milena; Tweedie, James; Mita, Seiji; Irving, Douglas; Collazo, Ramon; Sitar, Zlatko

    2018-02-01

    In order to understand the influence of dislocations on doping and compensation in Al-rich AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on different templates on sapphire and low dislocation density single crystalline AlN. AlGaN grown on AlN exhibited the highest conductivity, carrier concentration, and mobility for any doping concentration due to low threading dislocation related compensation and reduced self-compensation. The onset of self-compensation, i.e., the "knee behavior" in conductivity, was found to depend only on the chemical potential of silicon, strongly indicating the cation vacancy complex with Si as the source of self-compensation. However, the magnitude of self-compensation was found to increase with an increase in dislocation density, and consequently, AlGaN grown on AlN substrates demonstrated higher conductivity over the entire doping range.

  16. Testing of a 1.25-m HTS Cable Made from YBCO Tapes

    NASA Astrophysics Data System (ADS)

    Gouge, M. J.; Lue, J. W.; Demko, J. A.; Duckworth, R. C.; Fisher, P. W.; Daumling, M.; Lindsay, D. T.; Roden, M. L.; Tolbert, J. C.

    2004-06-01

    Ultera and Oak Ridge National Laboratory (ORNL) have jointly designed, built, and tested a 1.25-m-long, prototype high-temperature superconducting (HTS) power cable made from 1-cm-wide, second-generation YBa2Cu3Ox (YBCO)-coated conductor tapes. Electrical tests of this cable were performed in boiling liquid nitrogen at 77 K. DC testing of the 1.25-m cable included determination of the V-I curve, with a critical current of 4200 A. This was consistent with the properties of the 24 individual YBCO tapes. AC testing of the cable was conducted at currents up to 2500 Arms. The ac losses were measured calorimetrically by measuring the response of a calibrated temperature sensor placed on the former and electrically by use of a Rogowski coil with a lock-in amplifier. AC losses of about 2 W/m were measured at a cable ac current of 2000 Arms. Overcurrent testing was conducted at peak current values up to 12 kA for pulse lengths of 0.1-0.2 s. The cable temperature increased to 105 K for a 12 kA, 0.2 s overcurrent pulse, and the cable showed no degradation after the sequence of overcurrent testing. This commercial-grade HTS cable demonstrated the feasibility of second-generation YBCO tapes in an ac cable application.

  17. Structural and optical characteristics of GaAs films grown on Si/Ge substrates

    NASA Astrophysics Data System (ADS)

    Rykov, A. V.; Dorokhin, M. V.; Vergeles, P. S.; Baidus, N. V.; Kovalskiy, V. A.; Yakimov, E. B.; Soltanovich, O. A.

    2018-03-01

    A GaAs/AlAs heterostructure and a GaAs film grown on Si/Ge substrates have been fabricated and studied. A Ge buffer on a silicon substrate was fabricated using the MBE process. A3B5 films were grown by MOCVD at low pressures. Photoluminescence spectroscopy was used to define the optical quality of A3B5 films. Structural properties were investigated using the electron beam induced current method. It was established that despite a rather high density of dislocations on the epitaxial layers, the detected photoluminescence radiation of layers indicates the acceptable crystalline quality of the top GaAs layer.

  18. Improved luminescence properties of MoS2 monolayers grown via MOCVD: role of pre-treatment and growth parameters

    NASA Astrophysics Data System (ADS)

    Andrzejewski, D.; Marx, M.; Grundmann, A.; Pfingsten, O.; Kalisch, H.; Vescan, A.; Heuken, M.; Kümmell, T.; Bacher, G.

    2018-07-01

    Fabrication of transition metal dichalcogenides (TMDCs) via metalorganic chemical vapor deposition (MOCVD) represents one of the most attractive routes to large-scale 2D material layers. Although good homogeneity and electrical conductance have been reported recently, the relation between growth parameters and photoluminescence (PL) intensity—one of the most important parameters for optoelectronic applications—has not yet been discussed for MOCVD TMDCs. In this work, MoS2 is grown via MOCVD on sapphire (0001) substrates using molybdenum hexacarbonyl (Mo(CO)6, MCO) and di-tert-butyl sulphide as precursor materials. A prebake step under H2 atmosphere combined with a reduced MCO precursor flow increases the crystal grain size by one order of magnitude and strongly enhances PL intensity with a clear correlation to the grain size. A decrease of the linewidth of both Raman resonances and PL spectra down to full width at half maxima of 3.2 cm‑1 for the E 2g Raman mode and 60 meV for the overall PL spectrum indicate a reduced defect density at optimized growth conditions.

  19. Temperature coefficients and radiation induced DLTS spectra of MOCVD grown n(+)p InP solar cells

    NASA Technical Reports Server (NTRS)

    Walters, Robert J.; Statler, Richard L.; Summers, Geoffrey P.

    1991-01-01

    The effects of temperature and radiation on n(+)p InP solar cells and mesa diodes grown by metallorganic chemical vapor deposition (MOCVD) were studied. It was shown that MOCVD is capable of consistently producing good quality InP solar cells with Eff greater than 19 percent which display excellent radiation resistance due to minority carrier injection and thermal annealing. It was also shown that universal predictions of InP device performance based on measurements of a small group of test samples can be expected to be quite accurate, and that the degradation of an InP device due to any incident particle spectrum should be predictable from a measurement following a single low energy proton irradiation.

  20. Broad Temperature Pinning Study of 15 mol.% Zr-Added (Gd, Y)-Ba-Cu-O MOCVD Coated Conductors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Xu, AX; Khatri, N; Liu, YH

    BaZrO3 (BZO) nanocolumns have long been shown to be very effective for raising the pinning force F-p of REBa2Cu3Ox (REBCO, where RE = rare earth) films at high temperatures and recently at low temperatures too. We have successfully incorporated a high density of BZO nanorods into metal organic chemical vapor deposited (MOCVD) REBCO coated conductors via Zr addition. We found that, compared to the 7.5% Zr-added coated conductor, dense BZO nanorod arrays in the 15% Zr-added conductor are effective over the whole temperature range from 77 K down to 4.2 K. We attribute the substantially enhanced J(c) at 30 Kmore » to the weak uncorrelated pinning as well as the strong correlated pinning. Meanwhile, by tripling the REBCO layer thickness to similar to 2.8 mu m, the engineering critical current density J(e) at 30 K exceeds J(e) of optimized Nb-Ti wires at 4.2 K.« less

  1. Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth

    NASA Astrophysics Data System (ADS)

    Mickevičius, J.; Dobrovolskas, D.; Steponavičius, T.; Malinauskas, T.; Kolenda, M.; Kadys, A.; Tamulaitis, G.

    2018-01-01

    Capabilities of repeated deposition of ultrathin layers by pulsed metalorganic chemical vapor deposition (MOCVD) for improvement of structural and luminescence properties of InN thin films on GaN/sapphire templates were studied by varying the growth temperature and the durations of pulse and pause in the delivery of In precursor. X-ray diffraction, atomic force microscopy, and spatially-resolved photoluminescence (PL) spectroscopy were exploited to characterize the structural quality, surface morphology and luminescence properties. Better structural quality is achieved by using longer trimethylindium pulses. However, it is shown that the luminescence properties of InN epilayers correlate with the pause and pulse ratio rather than with their absolute lengths, and the deposition of 1.5-2 monolayers of InN during one growth cycle is optimal to achieve the highest PL intensity. Moreover, the use of temperature ramping enabled achieving the highest PL intensity and the smallest blue shift of the PL band. The luminescence parameters are linked with the structural properties, and domain-like patterns of InN layers are revealed.

  2. Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

    NASA Astrophysics Data System (ADS)

    Braniste, T.; Ciers, Joachim; Monaico, Ed.; Martin, D.; Carlin, J.-F.; Ursaki, V. V.; Sergentu, V. V.; Tiginyanu, I. M.; Grandjean, N.

    2017-02-01

    In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) grown GaN. It was found that in HVPE-grown GaN, multilayer porous structures are obtained due to self-organization processes leading to a fine modulation of doping during the crystal growth. However, these processes are not totally under control. Multilayer porous structures with a controlled design have been produced by optimizing the technological process of electrochemical etching in MOCVD-grown samples, consisting of five pairs of thin layers with alternating-doping profiles. The samples have been characterized by SEM imaging, photoluminescence spectroscopy, and micro-reflectivity measurements, accompanied by transfer matrix analysis and simulations by a method developed for the calculation of optical reflection spectra. We demonstrate the applicability of the produced structures for the design of Bragg reflectors.

  3. One-step growth of thin film SnS with large grains using MOCVD.

    PubMed

    Clayton, Andrew J; Charbonneau, Cecile M E; Tsoi, Wing C; Siderfin, Peter J; Irvine, Stuart J C

    2018-01-01

    Thin film tin sulphide (SnS) films were produced with grain sizes greater than 1 μm using a one-step metal organic chemical vapour deposition process. Tin-doped indium oxide (ITO) was used as the substrate, having a similar work function to molybdenum typically used as the back contact, but with potential use of its transparency for bifacial illumination. Tetraethyltin and ditertiarybutylsulphide were used as precursors with process temperatures 430-470 °C to promote film growth with large grains. The film stoichiometry was controlled by varying the precursor partial pressure ratios and characterised with energy dispersive X-ray spectroscopy to optimise the SnS composition. X-ray diffraction and Raman spectroscopy were used to determine the phases that were present in the film and revealed that small amounts of ottemannite Sn 2 S 3 was present when SnS was deposited on to the ITO using optimised growth parameters. Interaction at the SnS/ITO interface to form Sn 2 S 3 was deduced to have resulted for all growth conditions.

  4. Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films

    PubMed Central

    2011-01-01

    The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated. PMID:21711646

  5. Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films

    NASA Astrophysics Data System (ADS)

    Fiorenza, Patrick; Lo Nigro, Raffaella; Raineri, Vito

    2011-12-01

    The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.

  6. Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films.

    PubMed

    Fiorenza, Patrick; Lo Nigro, Raffaella; Raineri, Vito

    2011-02-04

    The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.

  7. High-temperature change of the creep rate in YBa2Cu3O7-δ films with different pinning landscapes

    NASA Astrophysics Data System (ADS)

    Haberkorn, N.; Miura, M.; Baca, J.; Maiorov, B.; Usov, I.; Dowden, P.; Foltyn, S. R.; Holesinger, T. G.; Willis, J. O.; Marken, K. R.; Izumi, T.; Shiohara, Y.; Civale, L.

    2012-05-01

    Magnetic relaxation measurements in YBa2Cu3O7-δ (YBCO) films at intermediate and high temperatures show that the collective vortex creep based on the elastic motion of the vortex lattice has a crossover to fast creep that significantly reduces the superconducting critical current density (Jc). This crossover occurs at temperatures much lower than the irreversibility field line. We study the influence of different kinds of crystalline defects, such as nanorods, twin boundaries, and nanoparticles, on the high-temperature vortex phase diagram of YBCO films. We found that the magnetization relaxation data is a fundamental tool to understand the pinning at high temperatures. The results indicate that high Jc values are directly associated with small creep rates. Based on the analysis of the depinning temperature in films with columnar defects, our results indicate that the size of the defects is the relevant parameter that determines thermal depinning at high temperatures. Also, the extension of the collective creep regime depends on the density of the pinning centers.

  8. MOCVD growth of gallium nitride with indium surfactant

    NASA Astrophysics Data System (ADS)

    Won, Dong Jin

    In this thesis research, the effect of indium surfactant on Ga-polar and N-polar GaN films grown at 950 °C by MOCVD on various substrates such as Si-face SiC, bulk GaN, Si(111), and C-face SiC was studied to investigate the stress relaxation mechanism, structural, and optical properties of GaN films which were modified by the indium surfactant. The effect of indium surfactant on GaN films grown on SiC was studied first. In the 1.8 microm thick Ga-polar GaN films grown on lattice-mismatched Si-face SiC substrates utilizing indium surfactant at 950 °C, inverted hexagonal pyramid surface defects, so-called V-defects which consist of six (1011) planes, formed at threading dislocations on the GaN surface, which gave rise to the relaxation of compressive misfit stress in an elastic way. Simultaneously, enhanced surface mobility of Ga and N adatoms with indium surfactant lead to improved 2D growth, which may be contradictory to the formation of surface defects like V-defects. In order to find the driving force for V-defect formation in the presence of indium, a nucleation and growth model was developed, taking into consideration the strain, surface, and dislocation energies modified by indium surfactant. This model found that the V-defect formation can be energetically preferred since indium reduces the surface energy of the (1011) plane, which gives rise to the V-defect formation and growth that can overcome the energy barrier at the critical radius of the V-defect. These Ga-polar GaN films were found to be unintentionally doped with Si. Thus, an investigation into the effect of intentional Si doping at a constant TMIn flow rate on GaN films was also performed. Si turned out to be another important factor in the generation of V-defects because Si may be captured at the threading dislocation cores by forming Si -- N bonds, acting as a mask to locally prevent GaN growth. This behavior appeared to assist the initiation of the V-defect which enables V-defects to easily

  9. Aluminum Coating Influence on Nitride Layer Performance Deposited by MO-CVD in Fluidized Bed on Austenitic Stainless Steel Substrate

    NASA Astrophysics Data System (ADS)

    Găluşcă, D. G.; Perju, M. C.; Nejneru, C.; Burduhos Nergiş, D. D.; Lăzărescu, I. E.

    2018-06-01

    The modification of surface properties by duplex treatments, involving the overlapping of two surface treatment techniques, has been established as an intelligent solution to create new applications for the substrate metallic material. There are driveline components operating under very tough wear and corrosion conditions, with high temperature and humidity variations. Such components are usually made of high Cr and Ni stainless steel and for the hardening of surfaces it is recommended a thermo chemical treatment. Since stainless steels, especially austenitic stainless steels, are difficult to nitride, experimental studies focus on increasing the depth of the nitride layer and surface hardness. Achieving the goal involves changing active layer chemical composition by introducing aluminum in the surface layer. In order to find a solution, a new surface treatment technique is produced by combining aluminum thin films by MO-CVD in a fluidized bed using a triisobutylaluminum precursor with a thermo chemical nitriding treatment.

  10. High Tc YBCO superconductor deposited on biaxially textured Ni substrate

    DOEpatents

    Budai, John D.; Christen, David K.; Goyal, Amit; He, Qing; Kroeger, Donald M.; Lee, Dominic F.; List, III, Frederick A.; Norton, David P.; Paranthaman, Mariappan; Sales, Brian C.; Specht, Eliot D.

    1999-01-01

    A superconducting article includes a biaxially-textured Ni substrate, and epitaxial buffer layers of Pd (optional), CeO.sub.2 and YSZ, and a top layer of in-plane aligned, c-axis oriented YBCO having a critical current density (J.sub.c) in the range of at least 100,000 A/cm.sup.2 at 77 K.

  11. Microstructure Characteristics of High Lift Factor MOCVD REBCO Coated Conductors With High Zr Content

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Galstyan, E; Gharahcheshmeh, MH; Delgado, L

    We report the microstructural characteristics of high levels of Zr-added REBa2Cu3O7-x (RE = Gd, Y rare earth) coated conductors fabricated by Metal Organic Chemical Vapor Deposition (MOCVD). The enhancements of the lift factor defined as a ratio of the in-field (3 T, B parallel to c-axis) critical current density (J(c)) at 30 K and self-field J(c) at 77 K have been achieved for Zr addition levels of 20 and 25 mol% via optimization of deposition parameters. The presence of strong flux pinning is attributed to the aligned nanocolumns of BaZrO3 and nanoprecipitates embedded in REBa2Cu3O7-x matrix with good crystal quality.more » A high density of BZO nanorods with a typical size 6-8 nm and spacing of 20 nm has been observed. Moreover, the high Zr content was found to induce a high density of intrinsic defects, including stacking faults and dislocations. The correlation between in-field performance along the c-axis and microstructure of (Gd, Y) BCO film with a high level of Zr addition is discussed.« less

  12. Sub-atmospheric pressure gas sources for bulk storage and delivery of arsine and phosphine to MOCVD tools

    NASA Astrophysics Data System (ADS)

    Raynor, M. W.; Houlding, V. H.; Funke, H. H.; Frye, R.; Dietz, J. A.

    2003-02-01

    A sub-atmospheric (SA) pressure gas source, based on the reversible adsorption of hydride gas onto a high surface area substrate within a cylinder, has been developed for the safe storage and delivery of high-purity arsine and phosphine for MOCVD processes. SA pressure and high-pressure sources are compared with respect to gas delivery and purity, risk reduction, and cost benefits. Gas analysis and performance of epi-structures grown with SA pressure cylinders confirm that the hydride gas delivered meets the purity requirements of MOCVD processes. Further, the low gas release rates measured from 2.2 and 49 l SA pressure cylinders indicate that the technology can be scaled up without additional safety risk.

  13. Influence of ZnO doping on the properties of single domain YBCO bulks fabricated by RE+011 TSIG process

    NASA Astrophysics Data System (ADS)

    Yang, W. M.; Yuan, X. C.; Guo, Y. X.

    2017-10-01

    Single domain YBCO bulk superconductors with different additions of ZnO have been successfully fabricated by RE+011 TSIG process with a new solid phase of [(100-x)(Y2O3 + 1.2BaCuO2)+xZnO] and a new liquid phase of (Y2O3+6CuO+10BaCuO2). The effects of ZnO additions on the growth morphology, microstructure, critical temperature (Tc), the levitation force and trapped field of the YBCO bulks have been investigated. It is found that within the range of ZnO additions x=0-1.0 wt.%, all the samples are of the typical characteristic of single-domain YBCO bulk; the Tc of the samples decreases from 92 K to 80 K when the ZnO addition x increases from x=0 wt.% to x=1.0 wt.%; the levitation force and trapped field of the samples firstly increase and then decrease with increase of ZnO additions after going through a maximum, which is closely related with the ZnO addition and the resulting flux pinning force caused by lattice distortion due to the substitution of Zn2+ for Cu2+ site in the YBCO crystal; the largest levitation force 36.8 N (77 K, 0.5 T) and trapped field 0.416 T (77 K, 0.5 T) of the samples are obtained when x=0.1 wt.%, respectively. This result is significantly important and helpful for us to improve the properties of YBCO bulk superconductors.

  14. Structural, electrical and optical properties of indium tin oxide thin film grown by metal organic chemical vapor deposition with tetramethyltin-precursor

    NASA Astrophysics Data System (ADS)

    Zhuo, Yi; Chen, Zimin; Tu, Wenbin; Ma, Xuejin; Wang, Gang

    2018-01-01

    Tin-doped indium oxide (ITO) is grown by metal organic chemical vapor deposition (MOCVD) using tetramethyltin (TDMASn) as tin precursor. The as-grown ITO films are polycrystalline with (111) and (100) textures. A gradual transition of crystallographic orientation from (111) preferred to (100) preferred is observed as the composition of tin changes. By precisely controlling the Sn doping, the ITO thin films present promising optical and electrical performances at either near-infrared-visible or visible-near-ultraviolet ranges. At low Sn doping level, the as-grown ITO possesses high electron mobility of 48.8 cm2 V-1 s-1, which results in high near-infrared transmittance and low resistivity. At higher Sn doping level, high carrier concentration (8.9 × 1020 cm-3) and low resistivity (3 × 10-4 Ω cm) are achieved. The transmittance is 97.8, 99.1, and 82.3% at the wavelength of 550, 365, and 320 nm, respectively. The results strongly suggest that MOCVD with TDMASn as tin precursor is an effective method to fabricate high quality ITO thin film for near-infrared, visible light, and near-ultraviolet application.

  15. Modelling of MOCVD Reactor: New 3D Approach

    NASA Astrophysics Data System (ADS)

    Raj, E.; Lisik, Z.; Niedzielski, P.; Ruta, L.; Turczynski, M.; Wang, X.; Waag, A.

    2014-04-01

    The paper presents comparison of two different 3D models of vertical, rotating disc MOCVD reactor used for 3D GaN structure growth. The first one is based on the reactor symmetry, while the second, novel one incorporates only single line of showerhead nozzles. It is shown that both of them can be applied interchangeably regarding the phenomena taking place within the processing area. Moreover, the importance of boundary conditions regarding proper modelling of showerhead cooling and the significance of thermal radiation on temperature field within the modelled structure are presented and analysed. The last phenomenon is erroneously neglected in most of the hitherto studies.

  16. Vaporization of a mixed precursors in chemical vapor deposition for YBCO films

    NASA Technical Reports Server (NTRS)

    Zhou, Gang; Meng, Guangyao; Schneider, Roger L.; Sarma, Bimal K.; Levy, Moises

    1995-01-01

    Single phase YBa2Cu3O7-delta thin films with T(c) values around 90 K are readily obtained by using a single source chemical vapor deposition technique with a normal precursor mass transport. The quality of the films is controlled by adjusting the carrier gas flow rate and the precursor feed rate.

  17. Fabrication and characterization of La2Zr2O7 films on different buffer architectures for YBa2Cu3O7-δ coated conductors by RF magnetron sputtering.

    PubMed

    Xu, Da; Liu, Linfei; Xiao, Guina; Li, Yijie

    2013-02-27

    La2Zr2O7 (LZO) films were grown on different buffer architectures by radio frequency magnetron sputtering for the large-scale application of YBa2Cu3O7-x (YBCO)-coated conductors. The three different buffer architectures were cerium oxide (CeO2), yttria-stabilized zirconia (YSZ)/CeO2, and CeO2/YSZ/CeO2. The microstructure and surface morphology of the LZO film were studied by X-ray diffraction, optical microscopy, field emission scanning electron microscopy, and atomic force microscopy. The LZO films prepared on the CeO2, YSZ/CeO2, and CeO2/YSZ/CeO2 buffer architectures were preferentially c-axis-oriented and highly textured. The in-plane texture of LZO film on CeO2 single-buffer architecture was ∆ φ = 5.5° and the out-of-plane texture was ∆ ω = 3.4°. All the LZO films had very smooth surfaces, but LZO films grown on YSZ/CeO2 and CeO2/YSZ/CeO2 buffer architectures had cracks. The highly textured LZO film grown on CeO2-seed buffered NiW tape was suitable for the epitaxial growth of YBCO film with high currents.

  18. Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass.

    PubMed

    Emmer, Hal; Chen, Christopher T; Saive, Rebecca; Friedrich, Dennis; Horie, Yu; Arbabi, Amir; Faraon, Andrei; Atwater, Harry A

    2017-07-05

    Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF 2 vapor etch. The resulting GaP films have surface roughnesses below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 10 17  cm -3 that exhibited mobilities as high as 16 cm 2 V -1 s -1 . Due to their unique optical properties, these films hold much promise for use in advanced optical devices.

  19. Levitation force of melt-textured YBCO superconductors under non-quasi-static situation

    NASA Astrophysics Data System (ADS)

    Zhao, Z. M.; Xu, J. M.; Yuan, X. Y.; Zhang, C. P.

    2018-06-01

    The superconducting levitation force of a simple superconductor-magnet system under non-quasi-static situation is investigated experimentally. Two yttrium barium copper oxide (YBCO) samples with different performances are chosen from two small batches of samples prepared by the top-seeded melt-textured growth process. The residual carbon content of the precursor powders of the two batches is different due to different heat treatment processes. During the experimental process for measuring the levitation force, the value of the relative speed between the YBCO sample and the permanent magnet is higher than that in conventional studies. The variation characteristics of the superconducting levitation force are analyzed and a crossing phenomenon in the force-displacement hysteresis curves is observed. The results indicate that the superconducting levitation force is different due to the different residual carbon contents. As residual carbon contents reduce, the crossing phenomenon is more obvious accordingly.

  20. Epitaxial Growth of BGaAs and BGaInAs by MOCVD: Preprint

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S. R.

    2001-10-01

    Presented at the 2001 NCPV Program Review Meeting: Comparison of use of TMB, TEB, and BF3 to diborane for MOCVD growth of BGaInAs. BGaInAs can potentially be used in strain-free high-efficiency III-V solar cells, but the growth of sufficiently high-quality epitaxial BGaInAs using diborane has proven difficult. We compare the use of alternative boron precursors (trimethylboron [TMB], triethylboron [TEB], and boron trifluoride [BF{sub 3}]) with diborane for the MOCVD growth of these boron-containing III-V alloys. We find that TMB and BF{sub 3} do not result in significant boron incorporation into GaAs. TEB does result in boron incorporation in a mannermore » very similar to diborane. Both diborane and TEB incorporate more efficiently using triethylgallium (TEG) rather than trimethylgallium (TMG), making TEG a preferred source of gallium for BGaAs epitaxy. Using TEB together with TEG, a higher boron composition (x = 4%-7%) has been achieved than has been previously reported, but we are still unable to achieve high- quality BGaInAs with the correct composition for solar cell applications.« less

  1. Micro-machined thin film hydrogen gas sensor, and method of making and using the same

    NASA Technical Reports Server (NTRS)

    DiMeo, Jr., Frank (Inventor); Bhandari, Gautam (Inventor)

    2001-01-01

    A hydrogen sensor including a thin film sensor element formed, e.g., by metalorganic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a microhotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magnetoresistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.

  2. GaN thin films growth and their application in photocatalytic removal of sulforhodamine B from aqueous solution under UV pulsed laser irradiation.

    PubMed

    Gondal, Mohammed A; Chang, Xiao F; Yamani, Zain H; Yang, Guo F; Ji, Guang B

    2011-01-01

    Single-crystalline Gallium Nitride (GaN) thin films were fabricated and grown by metal organic chemical vapor deposition (MOCVD) method on c-plane sapphire substrates and then characterized by high resolution-X-ray diffraction (HR-XRD) and photoluminescence (PL) measurements. The photocatalytic decomposition of Sulforhodamine B (SRB) molecules on GaN thin films was investigated under 355 nm pulsed UV laser irradiation. The results demonstrate that as-grown GaN thin films exhibited efficient degradation of SRB molecules and exhibited an excellent photocatalytic-activity-stability under UV pulsed laser exposure.

  3. Effects of densification of precursor pellets on microstructures and critical current properties of YBCO melt-textured bulks

    NASA Astrophysics Data System (ADS)

    Setoyama, Yui; Shimoyama, Jun-ichi; Motoki, Takanori; Kishio, Kohji; Awaji, Satoshi; Kon, Koichi; Ichikawa, Naoki; Inamori, Satoshi; Naito, Kyogo

    2016-12-01

    Effects of densification of precursor disks on the density of residual voids and critical current properties for YBCO melt-textured bulk superconductors were systematically investigated. Six YBCO bulks were prepared from precursor pellets with different initial particle sizes of YBa2Cu3Oy (Y123) powder and applied pressures for pelletization. It was revealed that use of finer Y123 powder and consolidation using cold-isostatic-pressing (CIP) with higher pressures result in reduction of residual voids at inner regions of bulks and enhance Jc especially under low fields below the second peak.

  4. Dielectric relaxation of barium strontium titanate and application to thin films for DRAM capacitors

    NASA Astrophysics Data System (ADS)

    Baniecki, John David

    This thesis examines the issues associated with incorporating the high dielectric constant material Barium Strontium Titanate (BSTO) in to the storage capacitor of a dynamic random access memory (DRAM). The research is focused on two areas: characterizing and understanding the factors that control charge retention in BSTO thin films and modifying the electrical properties using ion implantation. The dielectric relaxation of BSTO thin films deposited by metal-organic chemical vapor deposition (MOCVD) is investigated in the time and frequency domains. It is shown that the frequency dispersion of the complex capacitance of BSTO thin films can be understood in terms of a power-law frequency dependence from 1mHz to 20GHz. From the correspondence between the time and frequency domain measurements, it is concluded that the power-law relaxation currents extend back to the nano second regime of DRAM operation. The temperature, field, and annealing dependence of the dielectric relaxation currents are also investigated and mechanisms for the observed power law relaxation are explored. An equivalent circuit model of a high dielectric constant thin film capacitor is developed based on the electrical measurements and implemented in PSPICE. Excellent agreement is found between the experimental and simulated electrical characteristics showing the utility of the equivalent circuit model in simulating the electrical properties of high dielectric constant thin films. Using the equivalent circuit model, it is shown that the greatest charge loss due to dielectric relaxation occurs during the first read after a refresh time following a write to the opposite logic state for a capacitor that has been written to the same logic state for a long time (opposite state write charge loss). A theoretical closed form expression that is a function of three material parameters is developed which estimates the opposite state write charge loss due to dielectric relaxation. Using the closed form

  5. High T(sub c) superconductor/ferroelectric heterostructures

    NASA Astrophysics Data System (ADS)

    Ryder, Daniel F., Jr.

    1994-12-01

    Thin films of the ferroelectric perovskite, Ba(x) Sr(1-x) TiO3 (BST), were deposited on superconducting (100)YBa2Cu3O(x)(YBCO)/ (100)Yttria-stabilized zirconia(YSZ) substrates and (100)Si by ion-beam sputtering. Microstructural and compositional features of the ceramic bilayer were assessed by a combination of x-ray diffraction (XRD) and scanning electron microscopy. The films were smooth and featureless, and energy dispersive x-ray spectroscopy (EDX) data indicated that film composition closely matched target composition. XRD analysis showed that films deposited on YBCO substrates were highly c-axis textured, while the films deposited on (100)Si did not exhibit any preferred growth morphology. The superconducting properties of the YBCO substrate layer were maintained throughout the processing stages and, as such, it was demonstrated that ion beam sputtering is a viable method for the deposition of Ferroelectric/YBCO heterostructures.

  6. Static Test for a Gravitational Force Coupled to Type 2 YBCO Superconductors

    NASA Technical Reports Server (NTRS)

    Li, Ning; Noever, David; Robertson, Tony; Koczor, Ron; Brantley, Whitt

    1997-01-01

    As a Bose condensate, superconductors provide novel conditions for revisiting previously proposed couplings between electromagnetism and gravity. Strong variations in Cooper pair density, large conductivity and low magnetic permeability define superconductive and degenerate condensates without the traditional density limits imposed by the Fermi energy (approx. 10(exp -6) g cc. Recent experiments have reported anomalous weight loss for a test mass suspended above a rotating type II, YBCO superconductor, with the percentage change (0.05 - 2.1 %) independent of the test mass' chemical composition and diamagnetic properties. A variation of 5 parts per 10' was reported above a stationary (non-rotating) superconductor. In experiments using a sensitive gravimeter, bulk YBCO superconductors were stably levitated in a DC magnetic field. Changes in acceleration were measured to be less than 2 parts in 108 of the normal gravitational acceleration. This result puts new limits on the strength and range of the proposed coupling between static superconductors and gravity.

  7. Observation of dark pulses in 10 nm thick YBCO nanostrips presenting hysteretic current voltage characteristics

    NASA Astrophysics Data System (ADS)

    Ejrnaes, M.; Parlato, L.; Arpaia, R.; Bauch, T.; Lombardi, F.; Cristiano, R.; Tafuri, F.; Pepe, G. P.

    2017-12-01

    We have fabricated several 10 nm thick and 65 nm wide YBa2Cu3O7-δ (YBCO) nanostrips. The nanostrips with the highest critical current densities are characterized by hysteretic current voltage characteristics (IVCs) with a direct bistable switch from the zero-voltage to the finite voltage state. The presence of hysteretic IVCs allowed the observation of dark pulses due to fluctuations phenomena. The key role of the bistable behavior is its ability to transform a small disturbance (e.g. an intrinsic fluctuation) into a measurable transient signal, i.e. a dark pulse. On the contrary, in devices characterized by lower critical current density values, the IVCs are non-hysteretic and dark pulses have not been observed. To investigate the physical origin of the dark pulses, we have measured the bias current dependence of the dark pulse rate: the observed exponential increase with the bias current is compatible with mechanisms based on thermal activation of magnetic vortices in the nanostrip. We believe that the successful amplification of small fluctuation events into measurable signals in nanostrips of ultrathin YBCO is a milestone for further investigation of YBCO nanostrips for superconducting nanostrip single photon detectors and other quantum detectors for operation at higher temperatures.

  8. Novel approach to investigation of semiconductor MOCVD by microreactor technology

    NASA Astrophysics Data System (ADS)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2017-11-01

    Metal-Organic Chemical Vapour Deposition is a very complex technology that requires further investigation and optimization. We propose to apply microreactors to (1) replace multiple expensive time-consuming macroscale experiments by just one microreactor deposition with many points on one substrate; (2) to derive chemical reaction rates from individual deposition profiles using theoretical analytical solution. In this paper we also present the analytical solution of a simplified equation describing the deposition rate dependency on temperature. It allows to solve an inverse problem and to obtain detailed information about chemical reaction mechanism of MOCVD process.

  9. Field Performance of an Optimized Stack of YBCO Square “Annuli” for a Compact NMR Magnet

    PubMed Central

    Hahn, Seungyong; Voccio, John; Bermond, Stéphane; Park, Dong-Keun; Bascuñán, Juan; Kim, Seok-Beom; Masaru, Tomita; Iwasa, Yukikazu

    2011-01-01

    The spatial field homogeneity and time stability of a trapped field generated by a stack of YBCO square plates with a center hole (square “annuli”) was investigated. By optimizing stacking of magnetized square annuli, we aim to construct a compact NMR magnet. The stacked magnet consists of 750 thin YBCO plates, each 40-mm square and 80- μm thick with a 25-mm bore, and has a Ø10 mm room-temperature access for NMR measurement. To improve spatial field homogeneity of the 750-plate stack (YP750) a three-step optimization was performed: 1) statistical selection of best plates from supply plates; 2) field homogeneity measurement of multi-plate modules; and 3) optimal assembly of the modules to maximize field homogeneity. In this paper, we present analytical and experimental results of field homogeneity and temporal stability at 77 K, performed on YP750 and those of a hybrid stack, YPB750, in which two YBCO bulk annuli, each Ø46 mm and 16-mm thick with a 25-mm bore, are added to YP750, one at the top and the other at the bottom. PMID:22081753

  10. Effect of grain-alignment on the levitation force of melt-processed YBCO bulk superconductors

    NASA Astrophysics Data System (ADS)

    Yang, Wan-min; Zhou, Lian; Feng, Yong; Zhang, Ping-xiang; Wu, Min-zhi; Wu, Xiao-zu; Gawalek, W.

    1999-07-01

    Single-domain YBCO bulk superconductors have been fabricated by Top Seeded Melt Slow Cooling Growth(TSSCG) process. Two typical YBCO cylinder samples with differential grain-alignment were selected for the investigation of the relationship between the grain-alignment and the levitation force under the same testing condition at liquid nitrogen temperature. It is found that the levitation force values is much different for the two samples, the levitation force of the sample with H par c-axis is more than two times higher than that of the samples with H ⊥ c-axis. So it is necessary to take account of this anisotropy in practical applications. The relationship between a magnet and a superconductor can be well described with a double exponential function. All the results are discussed in details.

  11. Superconductivity devices: Commercial use of space

    NASA Technical Reports Server (NTRS)

    Haertling, Gene; Furman, Eugene; Hsi, Chi-Shiung; Li, Guang

    1993-01-01

    A YBCO thick film containing 20 percent Ag2O with a T(sub c) of 86.8 K and J(sub c) of 108 A/sq cm was obtained. The film was fabricated by a two-step firing process, i.e., firing the film at 1000 C for 10 minutes and annealing at 970 C for 30 minutes. The two-step firing process, however, was not suitable for the multiple-lead YBCO sample due to the formation of the 211 green phase at 1000 C in the multiple-lead YBCO sample. A BSCCO thick film printed on a MgO coated MSZ substrate and fired at 845 C for 2 hours exhibited a superconducting behavior at 89 K. Because of its porous microstructure, the critical current density of the BSCCO thick film was limited. This report also includes the results of the YBCO and BSCCO materials used as oxide electrodes for ferroelectric materials. The YBCO electroded PLZT showed higher remanent polarization and coercive field than the sample electroded with silver paste. A higher Curie temperature for the PLZT was obtained from the YBCO electroded sample. The BSCCO electroded sample, however, exhibited the same Curie temperature as that of a silver electroded sample. Dissipation factors of the ferroelectric samples increased when the oxide electrode was applied.

  12. Specific Effects of Oxygen Molecule and Plasma on Thin-Film Growth of Y-Ba-Cu-O and Bi-Sr-(Ca)-Cu-O Systems

    NASA Astrophysics Data System (ADS)

    Endo, Tamio; Horie, Munehiro; Hirate, Naoki; Itoh, Katsutoshi; Yamada, Satoshi; Tada, Masaki; Itoh, Ken-ichi; Sugiyama, Morihiro; Sano, Shinji; Watabe, Kinji

    1998-07-01

    Thin films of a-oriented YBa2Cu3Ox (YBCO), Ca-doped c-oriented Bi2(Sr,Ca)2CuOx and nondoped c-oriented Bi2Sr2CuOx (Bi2201) were prepared at low temperatures by ion beam sputtering with supply of oxygen molecules or plasma. The plasma enhances crystal growth of the a-YBCO and Ca-doped Bi2201 phases. This can be interpreted in terms of their higher surface energies. The growth and quality of nondoped Bi2201 are improved with the supply of oxygen molecules. This particular result could be interpreted by the collision process between the oxygen molecules and the sputtered particles.

  13. Pulsed laser deposition of thick BaHfO3-doped YBa2Cu307-δ films on highly alloyed textured Ni-W tapes

    NASA Astrophysics Data System (ADS)

    Sieger, M.; Hänisch, J.; Iida, K.; Gaitzsch, U.; Rodig, C.; Schultz, L.; Holzapfel, B.; Hühne, R.

    2014-05-01

    YBa2Cu3O7-δ (YBCO) films with a thickness of up to 3 μm containing nano-sized BaHfO3 (BHO) have been grown on Y2O3/Y-stabilized ZrO2/CeO2 buffered Ni-9at% W tapes by pulsed laser deposition (PLD). Structural characterization by means of X-ray diffraction confirmed that the YBCO layer grew epitaxial. A superconducting transition temperature Tc of about 89 K with a transition width of 1 K was determined, decreasing with increasing BHO content. Critical current density in self-field and at 0.3 T increased with increasing dopant level.

  14. Controlling BaZrO3 nanostructure orientation in YBa2Cu3O{}_{7-\\delta } films for a three-dimensional pinning landscape

    NASA Astrophysics Data System (ADS)

    Wu, J. Z.; Shi, J. J.; Baca, F. J.; Emergo, R.; Wilt, J.; Haugan, T. J.

    2015-12-01

    The orientation phase diagram of self-assembled BaZrO3 (BZO) nanostructures in c-oriented YBa2Cu3O{}7-δ (YBCO) films on flat and vicinal SrTiO3 substrates was studied experimentally with different dopant concentrations and vicinal angles and theoretically using a micromechanical model based on the theory of elasticity. The organized BZO nanostructure configuration was found to be tunable, between c-axis to ab-plane alignment, by the dopant concentration in the YBCO film matrix strained via lattice mismatched substrates. The correlation between the local strain caused by the BZO doping and the global strain on the matrix provides a unique approach for controllable growth of dopant nanostructure landscapes. In particular, a mixed phase of the c-axis-aligned nanorods and the ab-plane-aligned planar nanostructures can be obtained, leading to a three-dimensional pinning landscape with single impurity doping and much improved J c in almost all directions of applied magnetic field.

  15. The effect of temperature cycling typical of low earth orbit satellites on thin films of YBa2Cu3O(7-x)

    NASA Technical Reports Server (NTRS)

    Mogro-Campero, A.; Turner, L. G.; Bogorad, A.; Herschitz, R.

    1990-01-01

    The refrigeration of superconductors in space poses a challenging problem. The problem could be less severe if superconducting materials would not have to be cooled when not in use. Thin films of the YBa2Cu3O(7-x) (YBCO) superconductor were subjected to thermal cycling, which was carried out to simulate a large number of eclipses of a low earth orbit satellite. Electrical measurements were performed to find the effect of the temperature cycling. Thin films of YBCO were formed by coevaporation of Y, BaF2, and Cu and postannealing in wet oxygen at 850 C for 3.5 h. The substrates used were (100) SrTiO3, polycrystalline alumina, and oxidized silicon; the last two have an evaporated zirconia layer. Processing and microstructure studies of these types of films have been published. THe zero resistance transition temperatures of the samples used in this study were 91, 82, and 86 K, respectively. The samples were characterized by four point probe electrical measurements as a function of temperature. The parameters measured were: the zero resistance transition temperature, the 10 to 90 percent transition width, and the room temperature resistance, normalized to that measured before temperature cycling. The results for two samples are presented. Each sample had a cumulative exposure. Cycling in atmospheric pressure nitrogen was performed at a rate of about 60 cycles per day, whereas in vacuum the rate was only about 10 cycles per day. The results indicate only little or no changes in the parameters measured. Degradation of superconducting thin films of YBCO has been reported due to storage in nitrogen. It is believed that the relatively good performance of films after temperature cycling is related to the fact that BaF2 was used as an evaporation source. The latest result on extended temperature cycling indicates significant degradation. Further tests of extended cycling will be carried out to provide additional data and to clarify this preliminary finding.

  16. The development of technology for growing InAs/GaSb superlattices by MOCVD

    NASA Astrophysics Data System (ADS)

    Fedorov, I. V.; Levin, R. V.; Nevedomsky, V. N.

    2018-03-01

    This study is dedicated to developing the technology for growing InAs/GaSb superlattices (SLs) by MOCVD. The structures were studied by transmission electron microscopy (TEM) and photoluminescence (PL) methods. We concluded that hetero-interface sharpness is not affected by the pause time between growth stages for separate layers or by switching the layer direction. A possible interpretation for the spectra of SLs was suggested.

  17. Defect characterization of MOCVD grown AlN/AlGaN films on sapphire substrates by TEM and TKD

    NASA Astrophysics Data System (ADS)

    O'Connell, J. H.; Lee, M. E.; Westraadt, J.; Engelbrecht, J. A. A.

    2018-04-01

    High resolution transmission electron microscopy (TEM) has been used to characterize defects structures in AlN/AlGaN epilayers grown by metal-organic chemical vapour deposition (MOCVD) on c-plane sapphire (Al2O3) substrates. The AlN buffer layer was shown to be epitaxially grown on the sapphire substrate with the two lattices rotated relatively through 30°. The AlN layer had a measured thickness of 20-30 nm and was also shown to contain nano-sized voids. The misfit dislocations in the buffer layer have been shown to be pure edge with a spacing of 1.5 nm. TEM characterization of the AlGaN epilayers was shown to contain a higher than expected threading dislocation density of the order 1010 cm-2 as well as the existence of "nanopipes". TEM analysis of the planar lamella for AlGaN has presented evidence for the possibility of columnar growth. The strain and misorientation mapping in the AlGaN epilayer by transmission Kikuchi diffraction (TKD) using the FIB lamella has also been demonstrated to be complimentary to data obtained by TEM imaging.

  18. Growth rate of YBCO-Ag superconducting single grains

    NASA Astrophysics Data System (ADS)

    Congreve, J. V. J.; Shi, Y. H.; Dennis, A. R.; Durrell, J. H.; Cardwell, D. A.

    2017-12-01

    The large scale use of (RE)Ba2Cu3O7 bulk superconductors, where RE=Y, Gd, Sm, is, in part, limited by the relatively poor mechanical properties of these inherently brittle ceramic materials. It is reported that alloying of (RE)Ba2Cu3O7 with silver enables a significant improvement in the mechanical strength of bulk, single grain samples without any detrimental effect on their superconducting properties. However, due to the complexity and number of inter-related variables involved in the top seeded melt growth (TSMG) process, the growth of large single grains is difficult and the addition of silver makes it even more difficult to achieve successful growth reliably. The key processing variables in the TSMG process include the times and temperatures of the stages within the heating profile, which can be derived from the growth rate during the growth process. To date, the growth rate of the YBa2Cu3O7-Ag system has not been reported in detail and it is this lacuna that we have sought to address. In this work we measure the growth rate of the YBCO-Ag system using a method based on continuous cooling and isothermal holding (CCIH). We have determined the growth rate by measuring the side length of the crystallised region for a number of samples for specified isothermal hold temperatures and periods. This has enabled the growth rate to be modelled and from this an optimized heating profile for the successful growth of YBCO-Ag single grains to be derived.

  19. Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

    DOE PAGES

    Emmer, Hal; Chen, Christopher T.; Saive, Rebecca; ...

    2017-07-05

    Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF 2 vapor etch. The resulting GaP films have surface roughnessesmore » below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 10 17 cm -3 that exhibited mobilities as high as 16 cm 2V -1s -1. Therefore, due to their unique optical properties, these films hold much promise for use in advanced optical devices.« less

  20. Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Emmer, Hal; Chen, Christopher T.; Saive, Rebecca

    Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF 2 vapor etch. The resulting GaP films have surface roughnessesmore » below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 10 17 cm -3 that exhibited mobilities as high as 16 cm 2V -1s -1. Therefore, due to their unique optical properties, these films hold much promise for use in advanced optical devices.« less

  1. Ultrasonic studies of high-temperature superconductors

    NASA Astrophysics Data System (ADS)

    Feller, Jeffrey Robert

    1997-09-01

    This dissertation consists roughly of two parts. The first part deals with YBa2Cu3O7-δ (YBCO) films deposited on piezoelectric (LiNbO3) substrates. Interdigital surface acoustic wave (SAW) devices (delay lines operating at center frequencies of 50 and 100 MHz) fabricated from YBCO films are examined; insertion loss measurements are presented, and electrode resistance effects are analyzed using equivalent circuit models. Sheet resistance and 168 MHz SAW attenuation measurements of a granular YBCO film on LiNbO3 are also presented. The experimental data are discussed in terms of a percolation theory that models the film as an array of identical YBCO grains connected by resistive junctions which, in the superconducting state behave as Josephson junctions. The normal state resistances of the junctions are assumed to be randomly distributed. In the second part of the dissertation, a number of novel techniques (SAW 'bridges,' the high frequency interdigital proximity probe, and weak acoustic coupling sampled continuous wave spectrometry), used in the study of the vortex state and structural transitions in the normal state of YBCO films and single crystals, are described. Evidence of the existence of a first order structural transition in the vicinity of 220 K is provided.

  2. The effect of the YBCO-PST composite composition on the superconducting carrier concentration determined by microwave studies under high pressure

    NASA Astrophysics Data System (ADS)

    Krupski, M.; Stankowski, J.; Przybył, S.; Andrzejewski, B.; Kaczmarek, A.; Hilczer, B.; Marfaing, J.; Caranoni, C.

    1999-07-01

    The effect of hydrostatic pressure ( p<0.6 GPa) on the superconducting critical temperature Tc in YBa 2Cu 3O 7- δ-Pb(Sc 0.5Ta 0.5)O 3 (YBCO-PST) composite is measured by the method of magnetically modulated microwave absorption (MMMA). The Tc dependence on the PST fraction in weight x (0, 0.25, 0.5 and 0.75) is approximated by an inverted parabola function whereas the influence of pressure on Tc is represented by the equation: d Tc/d p=0.61(2)-1.72(6) x. The result may be explained assuming that PST phase in YBCO-PST composite influences the superconducting carrier concentration similar to the chemical substitution in YBa 2Cu 3O 7 [J.J. Neumeier, H.A. Zimmermann, Phys. Rev. B 47 (1993) 8385]. It is suggested that ions from PST diffuse to YBCO cell during the sintering of the composite.

  3. Ultrafast relaxation dynamics in BiFeO 3/YBa 2Cu 3O 7 bilayers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Springer, D.; Nair, Saritha K.; He, Mi

    The temperature dependence of the relaxation dynamics in the bilayer thin film heterostructure composed of multiferroic BiFeO 3 (BFO) and superconducting YBa 2Cu 3O 7 (YBCO) grown on (001) SrTiO 3 substrate is studied by time-resolved pump-probe technique, and compared with that of pure YBCO thin film grown under the same growth conditions. The superconductivity of YBCO is found to be retained in the heterostructure. We observe a speeding up of the YBCO recombination dynamics in the superconducting state of the heterostructure, and attribute it to the presence of weak ferromagnetism at the BFO/YBCOinterface as observed inmagnetization data. An extensionmore » of the Rothwarf-Taylor model is used to fit the ultrafast dynamics of BFO/YBCO, that models an increased quasiparticle occupation of the ferromagnetic interfacial layer in the superconducting state of YBCO.« less

  4. Ultrafast relaxation dynamics in BiFeO 3/YBa 2Cu 3O 7 bilayers

    DOE PAGES

    Springer, D.; Nair, Saritha K.; He, Mi; ...

    2016-02-12

    The temperature dependence of the relaxation dynamics in the bilayer thin film heterostructure composed of multiferroic BiFeO 3 (BFO) and superconducting YBa 2Cu 3O 7 (YBCO) grown on (001) SrTiO 3 substrate is studied by time-resolved pump-probe technique, and compared with that of pure YBCO thin film grown under the same growth conditions. The superconductivity of YBCO is found to be retained in the heterostructure. We observe a speeding up of the YBCO recombination dynamics in the superconducting state of the heterostructure, and attribute it to the presence of weak ferromagnetism at the BFO/YBCOinterface as observed inmagnetization data. An extensionmore » of the Rothwarf-Taylor model is used to fit the ultrafast dynamics of BFO/YBCO, that models an increased quasiparticle occupation of the ferromagnetic interfacial layer in the superconducting state of YBCO.« less

  5. Experimentally determined transport and magnetization ac losses of small cable models constructed from YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Šouc, J.; Vojenčiak, M.; Gömöry, F.

    2010-04-01

    Several short cable models were constructed from YBCO coated conductor (YBCO CC) to study their basic dc and ac electrical properties. They were prepared using superconducting tapes helically wound on fiberglass former of different diameter (5, 8 and 10 mm) with different twist pitch (from 1.7 up to 2.4 cm). The number of parallel-connected tapes ranged from 1 up to 6. The standard length of the models was 11 cm. In one case a 35 cm long model has been manufactured in order to perform a bending test. We observed that the critical currents of the models were proportional to the number of tapes used for their construction. Transport and magnetization ac loss were measured at 36 and 72 Hz.

  6. Recent advances in characterization of CaCu3Ti4O12 thin films by spectroscopic ellipsometric metrology.

    PubMed

    Lo Nigro, Raffaella; Malandrino, Graziella; Toro, Roberta G; Losurdo, Maria; Bruno, Giovanni; Fragalà, Ignazio L

    2005-10-12

    CaCu3Ti4O12 (CCTO) thin films were successfully grown on LaAlO3(100) and Pt/TiO2/SiO2/Si(100) substrates by a novel MOCVD approach. Epitaxial CCTO(001) thin films have been obtained on LaAlO3(100) substrates, while polycrystalline CCTO films have been grown on Pt/TiO2/SiO2/Si(100) substrates. Surface morphology and grain size of the different nanostructured deposited films were examined by AFM, and spectroscopic ellipsometry has been used to investigate the electronic part of the dielectric constant (epsilon2). Looking at the epsilon2 curves, it can be seen that by increasing the film structural order, a greater dielectric response has been obtained. The measured dielectric properties accounted for the ratio between grain volumes and grain boundary areas, which is very different in the different structured films.

  7. Preparation and characterization of epitaxial MgO thin film by atmospheric-pressure metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zeng, J. M.; Wang, H.; Shang, S. X.; Wang, Z.; Wang, M.

    1996-12-01

    Magnesium oxide (MgO) thin films have been prepared on Si(100), {SiO2(100) }/{Si} and {Pt(111) }/{Si} substrates by atmospheric-pressure metalorganic chemical vapor deposition (AP-MOCVD) for the first time. The relationship between the temperature of substrates ( Ts) and crystallographic orientations was also investigated. Magnesium acetylacetonate [Mg(CH 2COCH 2COCH 3) 2] was used as the metalorganic source. The relatively low temperature of substrates is about 480°C and the MgO thin films obtained were uniform, dense and well-ordered single crystal. X-ray diffraction experiments provided evidence that the MgO thin films on Si(100) ( Ts ≈ 400-680°C), {SiO2}/{Si} and {Pt}/{Si} were fully textured with (100) orientation. The deliquescent character of MgO thin films was also studied.

  8. Atomic layer epitaxy of YBaCuO for optoelectronic applications

    NASA Technical Reports Server (NTRS)

    Skogman, R. A.; Khan, M. A.; Van Hove, J. M.; Bhattarai, A.; Boord, W. T.

    1992-01-01

    An MOCVD-based atomic-layer epitaxy process is being developed as a potential solution to the problems of film-thickness and interface-abruptness control which are encountered when fabricating superconductor-insulator-superconductor devices using YBa2Cu3O(7-x). In initial studies, the atomic-layer MOCVD process yields superconducting YBa2Cu3O(7-x) films with substrate temperatures of 605 C during film growth, and no postdeposition anneal. The low temperature process yields a smooth film surface and can reduce interface degradation due to diffusion.

  9. Y1Ba2Cu3O(7-delta) thin film dc SQUIDs (superconducting quantum interference device)

    NASA Astrophysics Data System (ADS)

    Racah, Daniel

    1991-03-01

    Direct current superconducting quantum interferometers (SQUIDs) based on HTSC thin films have been measured and characterized. The thin films used were of different quality: (1) Granular films on Sapphire substrates, prepared either by e-gun evaporation, by laser ablation or by MOCVD (metal oxide chemical vapor deposition), (2) Epitaxial films on MgO substrates. Modulations of the voltage on the SQUIDs as a function of the applied flux have been observed in a wide range of temperatures. The nature of the modulation was found to be strongly dependent on the morphology of the film and on its critical current. The SQUIDs based on granular films were relatively noisy, hysteretic and with a complicated V-phi shape. Those devices based on low quality (lowIc) granular films could be measured only at low temperatures (much lower than 77 K). While those of higher quality (granular films with high Ic) could be measured near to the superconductive transition. The SQUID based on high quality epitaxial film was measured near Tc and showed an anomalous, time dependent behavior.

  10. Detection and imaging of the oxygen deficiency in single crystalline YBa{sub 2}Cu{sub 3}O{sub 7−δ} thin films using a scanning positron beam

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Reiner, M.; Gigl, T.; Hugenschmidt, C.

    2015-03-16

    Single crystalline YBa{sub 2}Cu{sub 3}O{sub 7−δ} (YBCO) thin films were grown by pulsed laser deposition in order to probe the oxygen deficiency δ using a mono-energetic positron beam. The sample set covered a large range of δ (0.191 < δ < 0.791) yielding a variation of the critical temperature T{sub c} between 25 and 90 K. We found a linear correlation between the Doppler broadening of the positron electron annihilation line and δ determined by X-ray diffraction. Ab-initio calculations have been performed in order to exclude the presence of Y vacancies and to ensure the negligible influence of potentially present Ba or Cu vacancies tomore » the found correlation. Moreover, scanning with the positron beam allowed us to analyze the spatial variation of δ, which was found to fluctuate with a standard deviation of up to 0.079(5) within a single YBCO film.« less

  11. A 5.9 tesla conduction-cooled coil composed of a stack of four single pancakes wound with YBCO wide tapes

    NASA Astrophysics Data System (ADS)

    Iwai, Sadanori; Miyazaki, Hiroshi; Tosaka, Taizo; Tasaki, Kenji; Urata, Masami; Ioka, Shigeru; Ishii, Yusuke

    2013-11-01

    We have been developing a conduction-cooled coil wound with YBCO-coated conductors for HTS applications. Previously, we have fabricated a coil composed of a stack of 12 single pancakes wound with 4 mm-wide YBCO tapes. This coil had a central magnetic field as high as 5.1 T at 10 K under conduction-cooled conditions. In the present study, we fabricated and tested a coil composed of a stack of four single pancakes wound with 12 mm-wide YBCO tapes. The total size of the coil and the Jc value of the tapes were almost the same as those of the former coil. At 77 K, the voltage-current characteristics showed a high n-value of 24, confirming that the coil had no degradation. Furthermore, in a conduction-cooled configuration at 20 K to 60 K, the coil showed a high n-value of over 20. At 20 K, the central magnetic field reached 5.9 T at 903 A, which is 1.3-times higher than that of the former coil.

  12. Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

    NASA Astrophysics Data System (ADS)

    Kopytko, M.; Jóźwikowski, K.; Martyniuk, P.; Gawron, W.; Madejczyk, P.; Kowalewski, A.; Markowska, O.; Rogalski, A.; Rutkowski, J.

    2016-09-01

    In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technology. It is shown that MOCVD technology is an excellent tool for HgCdTe barrier architecture growth with a wide range of composition, donor /acceptor doping, and without post-grown annealing. The device concept of a specific barrier bandgap architecture integrated with Auger-suppression is as a good solution for high-operating temperature infrared detectors. Analyzed devices show a high performance comparable with the state-of-the-art of HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07" and detectivities of non-immersed detectors are close to the value marked for HgCdTe photodiodes. Experimental data of long-wavelength infrared detector structures were confirmed by numerical simulations obtained by a commercially available software APSYS platform. A detailed analysis applied to explain dark current plots was made, taking into account Shockley-Read-Hall, Auger, and tunneling currents.

  13. High Temperature Superconductor Josephson Weak Links

    NASA Technical Reports Server (NTRS)

    Hunt, B. D.; Barner, J. B.; Foote, M. C.; Vasquez, R. C.

    1993-01-01

    High T_c edge-geometry SNS microbridges have been fabricated using ion-damaged YBa_2Cu_3O_(7-x) (YBCO) and a nonsuperconducting phase of YBCO (N-YBCO) as normal metals. Optimization of the ion milling process used for YBCO edge formation and cleaning has resulted in ion-damage barrier devices which exhibit I-V characteristics consistent with the Resistively-Shunted-Junction (RSJ) model, with typical current densities (J_c) of approximately 5 x 10^6 A/cm^2 at 4.2 K. Characterization of N-YBCO films suggests that N-YBCO is the orthorhombic YBCO phase with oxygen disorder suppressing T_c...

  14. A-SITE-AND/OR B-SITE-MODIFIED PBZRTIO3 MATERIALS AND (PB, SR, CA, BA, MG) (ZR, TI,NB, TA)O3 FILMS HAVING UTILITY IN FERROELECTRIC RANDOM ACCESS MEMORIES AND HIGH PERFORMANCE THIN FILM MICROACTUATORS

    NASA Technical Reports Server (NTRS)

    Bilodeau, Steven (Inventor); Baum, Thomas H. (Inventor); Roeder, Jeffrey F. (Inventor); Chen, Ing-Shin (Inventor)

    2004-01-01

    A modified PbZrTiO.sub.3 perovskite crystal material thin film, wherein the PbZrTiO.sub.3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

  15. Platinum group metals as flux pinning additions in screen printed superconducting YBa 2Cu 3O 7-δ thick films

    NASA Astrophysics Data System (ADS)

    Langhorn, J.; Bi, Y. J.; Abell, J. S.

    1996-02-01

    Platinum group metal additions made to thick films of YBCO have induced significant improvements in the superconducting properties, in particular critical current densities ( Jc). Values in excess of 7 × 10 3 A cm -2 at 77 K and zero applied field have been measured. Optical and transmission electron microscopy have shown a homogeneous distribution of sub-micron sized, and larger highly anisotropic 211, believed to result from a reaction between Pt and YBCO to create nucleation sites for 211 precipitates. Indirect supporting thermal analysis evidence for this reaction is presented. An increased density of dislocations associated with the {123}/{211} interface suggests that refined 211 precipitates may act as heterogeneous nucleation sites for flux pinning defects. Similar effects have been observed for additions of other platinum group metals (Rh, Pd).

  16. The effect of growth temperature on the irreversibility line of MPMG YBCO bulk with Y2O3 layer

    NASA Astrophysics Data System (ADS)

    Kurnaz, Sedat; Çakır, Bakiye; Aydıner, Alev

    2017-07-01

    In this study, three kinds of YBCO samples which are named Y1040, Y1050 and Y1060 were fabricated by Melt-Powder-Melt-Growth (MPMG) method without a seed crystal. Samples seem to be single crystal. The compacted powders were located on a crucible with a buffer layer of Y2O3 to avoid liquid to spread on the furnace plate and also to support crystal growth. YBCO samples were investigated by magnetoresistivity (ρ-T) and magnetization (M-T) measurements in dc magnetic fields (parallel to c-axis) up to 5 T. Irreversibility fields (Hirr) and upper critical fields (Hc2) were obtained using 10% and 90% criteria of the normal state resistivity value from ρ-T curves. M-T measurements were carried out using the zero field cooling (ZFC) and field cooling (FC) processes to get irreversible temperature (Tirr). Fitting of the irreversibility line results to giant flux creep and vortex glass models were discussed. The results were found to be consistent with the results of the samples fabricated using a seed crystal. At the fabrication of MPMG YBCO, optimized temperature for crystal growth was determined to be around 1050-1060 °C.

  17. The chemical deposition of semiconductor thin-films for photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Breen, Marc Louis

    Initially, possible precursors to metal sulfide films formed by metal-organic chemical vapor deposition (MOCVD), the standard commercial technique for manufacturing photovoltaic semiconductors, were synthesized. Triple-junction GaInP 2/GaAs/Ge solar cells, prepared by this method, were studied to understand how chemical properties and material defects can effect the performance of photovoltaic devices. Finally, novel methods for the low-temperature, solution growth of CdS, CdSe, and CuInSe2 photovoltaic materials were targeted which will reduce manufacturing costs and increase the economic feasibility of solar energy conversion. A series of dialkyldithiocarbamate copper, gallium and indium compounds were studied as possible metal sulfide MOCVD precursors. Metal powders were oxidized by dialkylthiurams in 3- or 4-methylpyridine using standard techniques for handling air and moisture-sensitive compounds. Metal chlorides reacted directly with the sodium dialkyldithiocarbamate salts. In these complexes, the metal was found in a roughly octahedral orientation, surrounded by dithiocarbamate ligands and/or solvent molecules. Triple-junction GaInP2/GaAs/Ge cells were composed of thin-films of GaInP2 and GaAs grown monolithically on top of a germanium substrate. Each layer of semiconductor material had a different bandgap and absorbed a different portion of the solar spectrum, thus improving the overall efficiency of the cell. Work focused on dark current-voltage behavior which is known to limit solar cell open-circuit voltage, fill factor, and conversion efficiency. Cells were studied using microscopic and spectroscopic techniques to correlate the effect of physical defects in the materials with poor performance of the devices as evaluated through current vs. voltage measurements. Films of US and CdSe were readily prepared in solution through an "ion-by-ion" deposition of Cd2+ and S2- (or Se 2-) generated from the slow hydrolysis of thiourea (or dimethylthiourea). The bath

  18. Flux pinning properties of YBa2Cu3O7-δ thin films containing a high density of nanoprecipitates: A comparative study to reveal size effects

    NASA Astrophysics Data System (ADS)

    Yamasaki, Hirofumi; Yamada, Hiroshi

    2017-11-01

    Temperature dependence of critical current density Jc(H, T) was measured in moderate magnetic fields (H ⊥ film) in two thermally co-evaporated YBa2Cu3O7-δ (YBCO) thin films (A, B) and two YBCO films (C, D) deposited using a pulsed-laser deposition method. All sample films were grown epitaxially with the c-axis perpendicular to the surface of a single-crystalline substrate. Transmission electron microscopy observation revealed that these four films contained a high density of nanoprecipitates with typical sizes of 3.6 - 5.0 nm (A), 5.0 - 7.1 nm (B), 7.0 - 10.1 nm (C) and 8.7 - 14.3 nm (D). Films A and B contained very fine nanoprecipitates, whose typical diameters Dtyp are smaller than double the estimated Ginzburg-Landau coherence length 2ξab at T = 77 K, and exhibited a steep increase of Jc with decreasing temperature. Whereas, film D, which contained relatively large nanoprecipitates (Dtyp > 2ξab at T ≤ 70 K), exhibited a gradual increase in Jc. This led to a remarkable crossing of the Jc(T) curves. The temperature dependence of Jc(H//c) under a fixed magnetic field is approximated by Jc ∼ (1 - T/Tc)m(1 + T/Tc)2 where the index m is larger for films containing finer precipitates; that is, m(A) > m(B) > m(C) > m(D). This means that finer nanoprecipitates generally cause steeper Jc increase at low temperatures, which is the origin of the observed crossing phenomenon. The experimental results are reasonably explained by several theoretical models based on the direct summation of elementary pinning forces fp calculated by core pinning interactions.

  19. Influence of in-situ deposited SiNx interlayer on crystal quality of GaN epitaxial films

    NASA Astrophysics Data System (ADS)

    Fan, Teng; Jia, Wei; Tong, Guangyun; Zhai, Guangmei; Li, Tianbao; Dong, Hailiang; Xu, Bingshe

    2018-05-01

    GaN epitaxial films with SiNx interlayers were prepared by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates. The influences of deposition times and locations of SiNx interlayers on crystal quality of GaN epitaxial films were studied. Under the optimal growth time of 120 s for the SiNx interlayer, the dislocation density of GaN film is reduced to 4.05 × 108 cm-2 proved by high resolution X-ray diffraction results. It is found that when the SiNx interlayer deposits on the GaN nucleation islands, the subsequent GaN film has the lowest dislocation density of only 2.89 × 108 cm-2. Moreover, a model is proposed to illustrate the morphological evolution and associated propagation processes of TDs in GaN epi-layers with SiNx interlayers for different deposition times and locations.

  20. Substrate effects on the epitaxial growth of ZnGeP2 thin films by open tube organometallic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Xing, G. C.; Bachmann, K. J.; Posthill, J. B.; Timmons, M. L.

    1991-01-01

    Epitaxial ZnGeP2-Ge films have been grown on (111)GaP substrates using MOCVD. The films grown with dimethylzinc to germane flow rate ratio R greater than 10 show mirror-smooth surface morphology. Films grown with R less than 10 show a high density of twinning, including both double position and growth twins. Compared to films grown on (001) GaP substrates, the layers on (111) GaP generally show a higher density of microstructural defects. TEM electron diffraction patterns show that the films grown on (111) GaP substrates are more disordered than films grown on (001) GaP under comparable conditions. The growth rate on (111) GaP substrates is about 2.5 times slower than that on (001) GaP, and films grown on Si substrates show extensive twinning formation. Both TEM and SEM examinations indicate that smooth epitaxial overgrowth may be easier on (111) Si substrates than on (001) Si.

  1. X-ray photoelectron spectroscopy characterization of a nonsuperconducting Y-Ba-Cu-O superconductor-normal-metal-superconductor barrier material

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Hunt, B. D.; Foote, M. C.; Bajuk, L. J.

    1992-01-01

    A film of a novel nonsuperconducting Y-Ba-Cu-O (YBCO) barrier material was grown using conditions similar to those reported by Agostinelli et al. (1991) for forming a cubic semiconducting (c-YBCO) phase, and the material was characterized using X-ray photoelectron spectroscopy (XPS). A comparison of the XPS spectra of this material to those obtained from the orthorhombic and tetragonal phases of YBCO (o-YBCO and t-YBCO, respectively) showed that the barrier material had spectral characteristics different from those of o-YBCO and t-YBCO, particularly in the O 1s region. Features associated with the Cu-O chain and surface-reconstructed Cu-O planes were absent, consistent with expectations for the simple perovskite crystal structure of c-YBCO proposed by Agostinelli et al.

  2. Microwave signal-processing applications of HTS films

    NASA Astrophysics Data System (ADS)

    Adam, J. D.; Wagner, G. R.

    1990-01-01

    The low surface resistance (Rs) of high-temperature superconductors (HTS) will lead to the development of passive microwave devices for application in radar, electronic warfare, and satellite systems with performance significantly better than achieved with normal conductors. In particular, delay line based devices such as phase shifters, convolvers, and correlators will have low lossses and multi-GHz bandwidths. Low-loss filters which presently occupy cubic feet in waveguide will be fabricated in compact microstrip or stripline, and ultra-high Q resonators which currently require liquid helium refrigeration will be operated at around 77 K. Measurement of Rs of HTS is important both for device design and for optimization of the film growth process. Several approaches have been developed which provide data over a wide range of frequency and temperature, including stripline, cacity, and dielectric resonator techniques. HTS films for microwave applications should have at least Rs(HTS(film surfaces. In order to achieve this the film should be epitaxial with their c-axis normal to the film. YBCO films with c-axis normal produced by laser ablation have the lowest reported surface resistance of 8 mΩ at 86.7 GHz and 77 K, which is as good as Nb at the same reduced temperature.

  3. Gallium Nitride (GaN) High Power Electronics (FY11)

    DTIC Science & Technology

    2012-01-01

    GaN films grown by metal-organic chemical vapor deposition (MOCVD) and ~1010 in films grown by molecular beam epitaxy (MBE) when they are deposited...inductively coupled plasma I-V current-voltage L-HVPE low doped HVPE MBE molecular beam epitaxy MOCVD metal-organic chemical vapor deposition...figure of merit HEMT high electron mobility transistor H-HVPE high doped HVPE HPE high power electronics HVPE hydride vapor phase epitaxy ICP

  4. A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators

    NASA Technical Reports Server (NTRS)

    Bilodeau, Steven (Inventor); Baum, Thomas H. (Inventor); Roeder, Jeffrey F. (Inventor); Chen, Ing-Shin (Inventor)

    2001-01-01

    A modified PbZrTiO.sub.3 perovskite crystal material thin film, wherein the PbZrTiO.sub.3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

  5. Micro-Machined Thin Film Sensor Arrays For The Detection Of H2, Containing Gases, And Method Of Making And Using The Same.

    DOEpatents

    DiMeo, Jr., Frank; Baum, Thomas H.

    2003-07-22

    The present invention provides a hydrogen sensor including a thin film sensor element formed by metal organic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a micro-hotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magneto resistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen permeable barrier may comprise species to scavenge oxygen and other like species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.

  6. Zinc Oxide Grown by CVD Process as Transparent Contact for Thin Film Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    Faÿ, S.; Shah, A.

    Metalorganic chemical vapor deposition of ZnO films (MOCVD) [1] started to be comprehensively investigated in the 1980s, when thin film industries were looking for ZnO deposition processes especially useful for large-scale coatings at high growth rates. Later on, when TCO for thin film solar cells started to be developed, another advantage of growing TCO films by the CVD process has been highlighted: the surface roughness. Indeed, a large number of studies on CVD ZnO revealed that an as-grown rough surface cn be obtained with this deposition process [2-4]. A rough surface induces a light scattering effect, which can significantly improve light trapping (and therefore current photo-generation) within thin film silicon solar cells. The CVD process, indeed, directly leads to as-grown rough ZnO films without any post-etching step (the latter is often introduced to obtain a rough surface, when working with as-deposited flat sputtered ZnO). This fact could turn out to be a significant advantage when upscaling the manufacturing process for actual commercial production of thin film solar modules. The zinc and oxygen sources for CVD growth of ZnO films are given in Table 6.1.

  7. Design and performance of a high-Tc superconductor coplanar waveguide filter

    NASA Technical Reports Server (NTRS)

    Chew, Wilbert; Riley, A. L.; Rascoe, Daniel L.; Hunt, Brian D.; Foote, Marc C.; Cooley, Thomas W.; Bajuk, Louis J.

    1991-01-01

    The design of a coplanar waveguide low-pass filter made of YBa2Cu3O(7-delta) (YBCO) on an LaAlO3 substrate is described. Measurements were incorporated into simple models for microwave CAD analysis to develop a final design. The patterned and packaged coplanar waveguide low-pass filter of YBCO, with dimensions suited for integrated circuits, exhibited measured insertion losses when cooled in liquid nitrogen superior to those of a similarly cooled thin-film copper filter throughout the 0 to 9.5 GHz passband. Coplanar waveguide models for use with thin-film normal metal (with thickness either greater or less than the skin depth) and YBCO are discussed and used to compare the losses of the measured YBCO and copper circuits.

  8. MOCVD Process Technology for Affordable, High-Yield, High-Performance MESFET Structures. MIMIC Phase 3

    DTIC Science & Technology

    1993-01-26

    by an optical pyrometer that views the inside of the susceptor through a sapphire light pipe. The gas delivery system is of standard commercial design ...of the operating conditions for MESFET growth. 2.2.2 Modifications to the Apparatus for MIMIC Spire designed and installed a bell jar capable of...withstanding, without water cooling, the 500 to 1 100’C temperatures needed for MOCVD growth. The bell jar features a flow disrupter of proprietary design

  9. TOPICAL REVIEW: Review of a chemical approach to YBa2Cu3O7-x-coated superconductors—metalorganic deposition using trifluoroacetates

    NASA Astrophysics Data System (ADS)

    Araki, Takeshi; Hirabayashi, Izumi

    2003-11-01

    Large-area, uniform, high critical current density (Jc) YBa2Cu3O7-x (YBCO) superconductor films are now routinely obtained by metalorganic deposition using trifluoroacetates (TFA-MOD). This method does not require any expensive vacuum apparatus at any time during the whole process. Thus, TFA-MOD is regarded as one of the most suitable candidates for fabricating a YBCO tape for many high-power applications. This method originated from an electron beam process using BaF2 developed by Mankiewich et al. Afterwards, Gupta et al reported using TFA-MOD to prepare a similar precursor film. These two ex situ processes used fluorides instead of BaCO3 to avoid the fatal deterioration in Jc, which is caused in the resulting films through metal carboxylic groups. Fluorides not only avoid such deterioration but also lead to perfectly c-axis-oriented epitaxial crystal growth. In conventional metalorganic deposition, nucleation in the precursor film causes random orientation in the resulting film. However, in TFA-MOD, nanocrystallites in the precursor film never cause such disorder. Furthermore, during the firing process of TFA-MOD, water and HF gas diffuse quickly between the film surface and growth front of the YBCO layer. This diffusion never limits the growth rate of YBCO. What distinguishes TFA-MOD from conventional metalorganic deposition? What happens during heat treatment? In this paper, we discuss all the TFA-MOD processes and the peculiar growth scheme of the YBCO layer in TFA-MOD using the model of a quasi-liquid network. In addition, we review the history of TFA-MOD and recent results and discuss the prospects of future applications.

  10. Development of coated conductors by inclined substrate deposition

    NASA Astrophysics Data System (ADS)

    Balachandran, U.; Ma, B.; Li, M.; Fisher, B. L.; Koritala, R. E.; Miller, D. J.; Dorris, S. E.

    2003-10-01

    Inclined substrate deposition (ISD) offers the potential for rapid production of high-quality biaxially textured buffer layers suitable for YBa 2Cu 3O 7- δ (YBCO)-coated conductors. We have grown biaxially textured magnesium oxide (MgO) films on Hastelloy C276 (HC) substrates by ISD at deposition rates of 20-100 Å/s. Scanning electron microscopy of the ISD MgO films showed columnar grain structures with a roof-tile-shaped surface. X-ray pole figure analysis revealed that the c-axis of the ISD MgO films is titled at an angle ≈32° from the substrate normal. A small full-width at half maximum of ≈9° was observed for the φ-scan of MgO films. YBCO films were grown on ISD MgO buffered HC substrates by pulsed laser deposition and were determined to be biaxially aligned with the c-axis parallel to the substrate normal. The orientation relationship between the ISD template and the top YBCO film was investigated by X-ray pole figure analysis and transmission electron microscopy. A transport critical current density of Jc=5.5×10 5 A/cm 2 at 77 K in self-field was measured on a YBCO film that was 0.46-μm thick, 4-mm wide, 10-mm long.

  11. Disentangling vortex pinning landscape in chemical solution deposited superconducting YBa2Cu3O7-x films and nanocomposites

    NASA Astrophysics Data System (ADS)

    Palau, A.; Vallès, F.; Rouco, V.; Coll, M.; Li, Z.; Pop, C.; Mundet, B.; Gàzquez, J.; Guzman, R.; Gutierrez, J.; Obradors, X.; Puig, T.

    2018-07-01

    In-field angular pinning performances at different temperatures have been analysed on chemical solution deposited (CSD) YBa2Cu3O7-x (YBCO) pristine films and nanocomposites. We show that with this analysis we are able to quantify the vortex pinning strength and energies, associated with different kinds of natural and artificial pinning defects, acting as efficient pinning centres at different regions of the H-T phase diagram. A good quantification of the variety of pinning defects active at different temperatures and magnetic fields provides a unique tool to design the best vortex pinning landscape under different operating conditions. We have found that by artificially introducing a unique defect in the YBCO matrix, the stacking faults, we are able to modify three different contributions to vortex pinning (isotropic-strong, anisotropic-strong, and isotropic-weak). The isotropic-strong contribution, widely studied in CSD YBCO nanocomposites, is associated with nanostrained regions induced at the partial dislocations surrounding the stacking faults. Moreover, the stacking fault itself acts as a planar defect which provides a very effective anisotropic-strong pinning at H//ab. Finally, the large presence of Cu-O cluster vacancies found in the stacking faults have been revealed as a source of isotropic-weak pinning sites, very active at low temperatures and high fields.

  12. Structural and electrical characteristics of gallium tin oxide thin films prepared by electron cyclotron resonance-metal organic chemical vapor deposition.

    PubMed

    Park, Ji Hun; Byun, Dongjin; Lee, Joong Kee

    2011-08-01

    Gallium tin oxide composite (GTO) thin films were prepared by electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD). The organometallics of tetramethlytin and trimethylgallium were used for precursors of gallium and tin, respectively. X-ray diffraction (XRD) characterization indicated that the gallium tin oxide composite thin films show the nanopolycrystalline of tetragonal rutile structure. Hall measurement indicated that the Ga/[O+Sn] mole ratio play an important role to determine the electrical properties of gallium tin composite oxide thin films. n-type conducting film obtained Ga/[O+Sn] mole ratio of 0.05 exhibited the lowest electrical resistivity of 1.21 x 10(-3) ohms cm. In our experimental range, the optimized carrier concentration of 3.71 x 10(18) cm(-3) was prepared at the Ga/[O+Sn] mole ratio of 0.35.

  13. Effects of substrate heating and post-deposition annealing on characteristics of thin MOCVD HfO2 films

    NASA Astrophysics Data System (ADS)

    Gopalan, Sundararaman; Ramesh, Sivaramakrishnan; Dutta, Shibesh; Virajit Garbhapu, Venkata

    2018-02-01

    It is well known that Hf-based dielectrics have replaced the traditional SiO2 and SiON as gate dielectric materials for conventional CMOS devices. By using thicker high-k materials such as HfO2 rather than ultra-thin SiO2, we can bring down leakage current densities in MOS devices to acceptable levels. HfO2 is also one of the potential candidates as a blocking dielectric for Flash memory applications for the same reason. In this study, effects of substrate heating and oxygen flow rate while depositing HfO2 thin films using CVD and effects of post deposition annealing on the physical and electrical characteristics of HfO2 thin films are presented. It was observed that substrate heating during deposition helps improve the density and electrical characteristics of the films. At higher substrate temperature, Vfb moved closer to zero and also resulted in significant reduction in hysteresis. Higher O2 flow rates may improve capacitance, but also results in slightly higher leakage. The effect of PDA depended on film thickness and O2 PDA improved characteristics only for thick films. For thinner films forming gas anneal resulted in better electrical characteristics.

  14. Effect of Ag doping on the structural, electrical and optical properties of ZnO grown by MOCVD at different substrate temperatures

    NASA Astrophysics Data System (ADS)

    Ievtushenko, A.; Karpyna, V.; Eriksson, J.; Tsiaoussis, I.; Shtepliuk, I.; Lashkarev, G.; Yakimova, R.; Khranovskyy, V.

    2018-05-01

    ZnO films and nanostructures were deposited on Si substrates by MOCVD using single source solid state zinc acetylacetonate (Zn(AA)) precursor. Doping by silver was realized in-situ via adding 1 and 10 wt. % of Ag acetylacetonate (Ag(AA)) to zinc precursor. Influence of Ag on the microstructure, electrical and optical properties of ZnO at temperature range 220-550 °C was studied by scanning, transmission electron and Kelvin probe force microscopy, photoluminescence and four-point probe electrical measurements. Ag doping affects the ZnO microstructure via changing the nucleation mode into heterogeneous and thus transforming the polycrystalline films into a matrix of highly c-axis textured hexagonally faceted nanorods. Increase of the work function value from 4.45 to 4.75 eV was observed with Ag content increase, which is attributed to Ag behaviour as a donor impurity. It was observed, that near-band edge emission of ZnO NS was enhanced with Ag doping as a result of quenching deep-level emission. Upon high doping of ZnO by Ag it tends to promote the formation of basal plane stacking faults defect, as it was observed by HR TEM and PL study in the case of 10 wt.% of Ag. Based on the results obtained, it is suggested that NS deposition at lower temperatures (220-300 °C) is more favorable for p-type doping of ZnO.

  15. Flux Pinning Enhancement in YBa2Cu3O7-x Films for Coated Conductor Applications (Postprint)

    DTIC Science & Technology

    2012-02-01

    the nanocolumns with a certain constant diameter. Since BSO and YBCO are both perovskites, they tend to grow along the c - axis perpendicular to LAO ...20 0 20 40 60 80 100 YBCO+BaSnO 3 / LAO YBCO/MS-6 YBCO+BaSnO 3 /MS-6 J c /J c( h // a b ) Angle (Degs) H//C H//ab Figure 5.18 Transport current...density data of YBCO+BSO fi lm on a LaAlO 3 and a buffered metallic substrate as compared to YBCO fi lm on a metallic substrate. ( LAO = LaAlO 3 , MS

  16. In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory.

    PubMed

    Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

    2018-04-01

    The programming characteristics of charge trap flash memory device adopting amorphous In 2 Ga 2 ZnO 7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO 2 (blocking oxide)/p ++ -Si (control gate) substrate, where 3 nm thick atomic layer deposited Al 2 O 3 (tunneling oxide) and 5 nm thick low-pressure CVD Si 3 N 4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F ) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

  17. In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory

    NASA Astrophysics Data System (ADS)

    Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

    2018-04-01

    The programming characteristics of charge trap flash memory device adopting amorphous In2Ga2ZnO7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO2 (blocking oxide)/p++-Si (control gate) substrate, where 3 nm thick atomic layer deposited Al2O3 (tunneling oxide) and 5 nm thick low-pressure CVD Si3N4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

  18. Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD

    PubMed Central

    2014-01-01

    Indium gallium nitride (InGaN) samples with single heterojunction (SH) and double heterojunction (DH) were prepared using metal-organic chemical vapor deposition. SH has a layer of InGaN thin film (thicknesses, 25, 50, 100, and 200 nm) grown on an uGaN film (thickness, 2 μm). The DH samples are distinguished by DH uGaN film (thickness, 120 nm) grown on the InGaN layer. Reciprocal space mapping measurements reveal that the DH samples are fully strained with different thicknesses, whereas the strain in the SH samples are significantly relaxed with the increasing thickness of the InGaN film. Scanning electron microscopy results show that the surface roughness of the sample increases when the sample is relaxed. High-resolution transmission electron microscopy images of the structure of indium droplets in the DH sample indicate that the thickness of the InGaN layer decreases with the density of indium droplets. The formation of these droplets is attributed to the insufficient kinetic energy of indium atom to react with the elements of group V, resulting to aggregation. The gallium atoms in the GaN thin film will not be uniformly replaced by indium atoms; the InGaN thin film has an uneven distribution of indium atoms and the quality of the epitaxial layer is degraded. PMID:25024692

  19. Role of nano and micron-sized inclusions on the oxygen controlled preform optimized infiltration growth processed YBCO superconductors

    NASA Astrophysics Data System (ADS)

    Pavan Kumar Naik, S.; Bai, V. Seshu

    2017-02-01

    In the present work, with the aim of improving the local flux pinning at the unit cell level in the YBa2Cu3O7-δ (YBCO) bulk superconductors, 20 wt% of nanoscale Sm2O3 and micron sized (Nd, Sm, Gd)2BaCuO5 secondary phase particles were added to YBCO and processed in oxygen controlled preform optimized infiltration growth process. Nano Dispersive Sol Casting method is employed to homogeneously distribute the nano Sm2O3 particles of 30-50 nm without any agglomeration in the precursor powder. Microstructural investigations on doped samples show the chemical fluctuations as annuli cores in the 211 phase particles. The introduction of mixed rare earth elements at Y-site resulted in compositional fluctuations in the superconducting matrix. The associated lattice mismatch defects have provided flux pinning up to large magnetic fields. Magnetic field dependence of current density (Jc(H)) at different temperatures revealed that the dominant pinning mechanism is caused by spatial variations of critical temperatures, due to the spatial fluctuations in the matrix composition. As the number of rare earth elements increased in the YBCO, the peak field position in the scaling of the normalized pinning force density (Fp/Fp max) significantly gets shifted towards the higher fields. The curves of Jc(H) and Fp/Fp max at different temperatures clearly indicate the LRE substitution for LRE' or Ba-sites for δTc pinning.

  20. Berkovich Nanoindentation on AlN Thin Films

    PubMed Central

    2010-01-01

    Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD) derived Si-doped (2 × 1017 cm−3) GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB) milling to accurately position the cross-section of the nanoindented area. The hardness and Young’s modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option. The obtained values of the hardness and Young’s modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple “pop-ins” observed in the load–displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load–displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices. PMID:20672096

  1. Berkovich Nanoindentation on AlN Thin Films.

    PubMed

    Jian, Sheng-Rui; Chen, Guo-Ju; Lin, Ting-Chun

    2010-03-31

    Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD) derived Si-doped (2 × 1017 cm-3) GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB) milling to accurately position the cross-section of the nanoindented area. The hardness and Young's modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option. The obtained values of the hardness and Young's modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple "pop-ins" observed in the load-displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load-displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices.

  2. Imaging of current distributions in superconducting thin film structures

    NASA Astrophysics Data System (ADS)

    Dönitz, Dietmar

    2006-10-01

    Local analysis plays an important role in many fields of scientific research. However, imaging methods are not very common in the investigation of superconductors. For more than 20 years, Low Temperature Scanning Electron Microscopy (LTSEM) has been successfully used at the University of Tübingen for studying of condensed matter phenomena, especially of superconductivity. In this thesis LTSEM was used for imaging current distributions in different superconducting thin film structures: - Imaging of current distributions in Josephson junctions with ferromagnetic interlayer, also known as SIFS junctions, showed inhomogeneous current transport over the junctions which directly led to an improvement in the fabrication process. An investigation of improved samples showed a very homogeneous current distribution without any trace of magnetic domains. Either such domains were not present or too small for imaging with the LTSEM. - An investigation of Nb/YBCO zigzag Josephson junctions yielded important information on signal formation in the LTSEM both for Josephson junctions in the short and in the long limit. Using a reference junction our signal formation model could be verified, thus confirming earlier results on short zigzag junctions. These results, which could be reproduced in this work, support the theory of d-wave symmetry in the superconducting order parameter of YBCO. Furthermore, investigations of the quasiparticle tunneling in the zigzag junctions showed the existence of Andreev bound states, which is another indication of the d-wave symmetry in YBCO. - The LTSEM study of Hot Electron Bolometers (HEB) allowed the first successful imaging of a stable 'Hot Spot', a self-heating region in HEB structures. Moreover, the electron beam was used to induce an - otherwise unstable - hot spot. Both investigations yielded information on the homogeneity of the samples. - An entirely new method of imaging the current distribution in superconducting interference devices

  3. Deuterium permeation of amorphous alumina coating on 316L prepared by MOCVD

    NASA Astrophysics Data System (ADS)

    Li, Shuai; He, Di; Liu, Xiaopeng; Wang, Shumao; Jiang, Lijun

    2012-01-01

    The deuterium permeation behavior of the alumina coating on 316L stainless steel prepared by metal organic chemical vapor deposition (MOCVD) was investigated. The alumina coating was also characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and scanning electron microscope (SEM). It was found that the as-prepared coating consisted of amorphous alumina. This alumina coating had a dense, crack-free and homogeneous morphology. Although the alumina coating was amorphous, effective suppression of deuterium permeation was demonstrated. The deuterium permeability of the alumina coating was 51-60 times less than that of the 316L stainless steel and 153-335 times less than that of the referred low activation martensitic steels at 860-960 K.

  4. Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

    NASA Technical Reports Server (NTRS)

    Macinnes, Andrew N.; Jenkins, Phillip P.; Power, Michael B.; Kang, Soon; Barron, Andrew R.; Hepp, Aloysius F.; Tabib-Azar, Massood

    1994-01-01

    Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.

  5. Operating characteristics of superconducting fault current limiter using 24kV vacuum interrupter driven by electromagnetic repulsion switch

    NASA Astrophysics Data System (ADS)

    Endo, M.; Hori, T.; Koyama, K.; Yamaguchi, I.; Arai, K.; Kaiho, K.; Yanabu, S.

    2008-02-01

    Using a high temperature superconductor, we constructed and tested a model Superconducting Fault Current Limiter (SFCL). SFCL which has a vacuum interrupter with electromagnetic repulsion mechanism. We set out to construct high voltage class SFCL. We produced the electromagnetic repulsion switch equipped with a 24kV vacuum interrupter(VI). There are problems that opening speed becomes late. Because the larger vacuum interrupter the heavier weight of its contact. For this reason, the current which flows in a superconductor may be unable to be interrupted within a half cycles of current. In order to solve this problem, it is necessary to change the design of the coil connected in parallel and to strengthen the electromagnetic repulsion force at the time of opening the vacuum interrupter. Then, the design of the coil was changed, and in order to examine whether the problem is solvable, the current limiting test was conducted. We examined current limiting test using 4 series and 2 parallel-connected YBCO thin films. We used 12-centimeter-long YBCO thin film. The parallel resistance (0.1Ω) is connected with each YBCO thin film. As a result, we succeed in interrupting the current of superconductor within a half cycle of it. Furthermore, series and parallel-connected YBCO thin film could limit without failure.

  6. Optimization of the deposition conditions and structural characterization of Y1Ba2Cu3O(7-x) thin superconducting films

    NASA Technical Reports Server (NTRS)

    Chrzanowski, J.; Meng-Burany, S.; Xing, W. B.; Curzon, A. E.; Heinrich, B.; Irwin, J. C.; Cragg, R. A.; Zhou, H.; Habib, F.; Angus, V.

    1995-01-01

    Two series of Y1Ba2Cu3O(z) thin films deposited on (001) LaAl03 single crystals by excimer laser ablation under two different protocols have been investigated. The research has yielded well defined deposition conditions in terms of oxygen partial pressure p(O2) and substrate temperature of the deposition process Th, for the growth of high quality epitaxial films of YBCO. The films grown under conditions close to optimal for both j(sub c) and T(sub c) exhibited T(sub c) greater than or equal to 91 K and j(sub c) greater than or equal to 4 x 106 A/sq cm, at 77 K. Close correlations between the structural quality of the film, the growth parameters (p(O2), T(sub h)) and j(sub c) and T(sub c) have been found.

  7. Three-dimensional modelling of horizontal chemical vapor deposition. I - MOCVD at atmospheric pressure

    NASA Technical Reports Server (NTRS)

    Ouazzani, Jalil; Rosenberger, Franz

    1990-01-01

    A systematic numerical study of the MOCVD of GaAs from trimethylgallium and arsine in hydrogen or nitrogen carrier gas at atmospheric pressure is reported. Three-dimensional effects are explored for CVD reactors with large and small cross-sectional aspect ratios, and the effects on growth rate uniformity of tilting the susceptor are investigated for various input flow rates. It is found that, for light carrier gases, thermal diffusion must be included in the model. Buoyancy-driven three-dimensional flow effects can greatly influence the growth rate distribution through the reactor. The importance of the proper design of the lateral thermal boundary conditions for obtaining layers of uniform thickness is emphasized.

  8. Superconducting properties of nano-sized SiO2 added YBCO thick film on Ag substrate

    NASA Astrophysics Data System (ADS)

    Almessiere, Munirah Abdullah; Al-Otaibi, Amal lafy; Azzouz, Faten Ben

    2017-10-01

    The microstructure and the flux pinning capability of SiO2-added YBa2Cu3Oy thick films on Ag substrates were investigated. A series of YBa2Cu3Oy thick films with small amounts (0-0.5 wt%) of nano-sized SiO2 particles (12 nm) was prepared. The thicknesses of the prepared thick films was approximately 100 µm. Phase analysis by x-ray diffraction and microstructure examination by scanning electron microscopy were performed and the critical current density dependence on the applied magnetic field Jc(H) and electrical resistivity ρ(T) were investigated. The magnetic field and temperature dependence of the critical current density (Jc) was calculated from magnetization measurements using Bean's critical state model. The results showed that the addition of a small amount (≤0.02 wt%) of SiO2 was effective in enhancing the critical current densities in the applied magnetic field. The sample with 0.01 wt% of added SiO2 exhibited a superconducting characteristics under an applied magnetic field for a temperature ranging from 10 to 77 K.

  9. Calcium copper-titanate thin film growth: tailoring of the operational conditions through nanocharacterization and substrate nature effects.

    PubMed

    Lo Nigro, Raffaella; Toro, Roberta G; Malandrino, Graziella; Fragalà, Ignazio L; Losurdo, Maria; Giangregorio, Michelaria M; Bruno, Giovanni; Raineri, Vito; Fiorenza, Patrick

    2006-09-07

    A novel approach based on a molten multicomponent precursor source has been applied for the MOCVD fabrication of high-quality CaCu(3)Ti(4)O(12) (CCTO) thin films on various substrates. The adopted in situ strategy involves a molten mixture consisting of Ca(hfa)(2).tetraglyme, Ti(tmhd)(2)(O-iPr)(2), and Cu(tmhd)(2) [Hhfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione; tetraglyme = 2,5,8,11,14-pentaoxapentadecane; Htmhd = 2,2,6,6-tetramethyl-3,5-heptandione; O-iPr = isopropoxide] precursors. Film structural and morphological characterizations have been carried out by several techniques [X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM)], and in particular the energy filtered TEM mapping and X-ray energy dispersive (EDX) analysis in TEM mode provided a suitable correlation between nanostructural properties of CCTO films and deposition conditions and/or the substrate nature. Correlation between the nanostructure and optical/dielectric properties has been investigated exploiting spectroscopic ellipsometry.

  10. Ellipsometric study of YBa2Cu3O(7-x) laser ablated and co-evaporated films

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Sieg, R. E.; Warner, J. D.; Stan, M. A.; Vitta, S.

    1990-01-01

    High temperature superconducting films of YBa2Cu3O(7-x) (YBCO were grown on SrTiO3, LaA1O3, and YSZ substrates using two techniques: excimer laser ablation with in situ annealing and co-evaporation of Y, Cu, and BaF2 with ex-situ annealing. Film thicknesses were typically 5000 A, with predominant c-axis alignment perpendicular to the substrate. Critical temperatures up to Tc(R=O)=90 K were achieved by both techniques. Ellipsometric measurements were taken in the range 1.6 to 4.3 eV using a variable angle spectroscopic ellipsometer. The complex dielectric function of the laser ablated films was reproducible from run to run, and was found to be within 10 percent of that previously reported for (001) oriented single crystals. A dielectric overlayer was observed in these films, with an index of refraction of approximately 1.55 and nearly zero absorption. For the laser ablated films the optical properties were essentially independent of substrate material. The magnitude of the dielectric function obtained for the co-evaported films was much lower than the value reported for single crystals, and was sample dependent.

  11. Transport properties of ultrathin YBa2Cu3O7 -δ nanowires: A route to single-photon detection

    NASA Astrophysics Data System (ADS)

    Arpaia, Riccardo; Golubev, Dmitri; Baghdadi, Reza; Ciancio, Regina; Dražić, Goran; Orgiani, Pasquale; Montemurro, Domenico; Bauch, Thilo; Lombardi, Floriana

    2017-08-01

    We report on the growth and characterization of ultrathin YBa2Cu3O7 -δ (YBCO) films on MgO (110) substrates, which exhibit superconducting properties at thicknesses down to 3 nm. YBCO nanowires, with thicknesses down to 10 nm and widths down to 65 nm, have also been successfully fabricated. The nanowires protected by a Au capping layer show superconducting properties close to the as-grown films and critical current densities, which are limited by only vortex dynamics. The 10-nm-thick YBCO nanowires without the Au capping present hysteretic current-voltage characteristics, characterized by a voltage switch which drives the nanowires directly from the superconducting to the normal state. We associate such bistability to the presence of localized normal domains within the superconductor. The presence of the voltage switch in ultrathin YBCO nanostructures, characterized by high sheet resistance values and high critical current values, makes our nanowires very attractive devices to engineer single-photon detectors.

  12. Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN

    NASA Astrophysics Data System (ADS)

    Osinski, Marek; Eliseev, Petr G.; Lee, Jinhyun; Smagley, Vladimir A.; Sugahara, Tamoya; Sakai, Shiro

    1999-11-01

    Experimental data on photoluminescence of various bulk and quantum-well epitaxial InGaN/GaN structures grown by MOCVD are interpreted in terms of a band-tail model of inhomogeneously broadened radiative recombination. The anomalous temperature-induced blue spectral is shown to result from band-tail recombination under non-degenerate conditions. Significant differences are observed between epilayers grown on sapphire substrates and on GaN substrates prepared by the sublimination method, with no apparent evidence of band tails in homoepitaxial structures, indicating their higher crystalline quality.

  13. General approach for the determination of the magneto-angular dependence of the critical current of YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Zhang, X.; Zhong, Z.; Ruiz, H. S.; Geng, J.; Coombs, T. A.

    2017-02-01

    The physical understanding and numerical modelling of superconducting devices which exploit the high performance of second generation high temperature superconducting tapes (2G-HTS), is commonly hindered by the lack of accurate functions which allow the consideration of the in-field dependence of the critical current. This is true regardless of the manufacturer of the superconducting tape. In this paper, we present a general approach for determining a unified function I c(B, θ), ultimately capable of describing the magneto-angular dependence of the in-field critical current of commercial 2G-HTS tapes in the Lorentz configuration. Five widely different superconducting tapes, provided by three different manufacturers, have been tested in a liquid nitrogen bath and external magnetic fields of up to 400 mT. The critical current was recorded at 90 different orientations of the magnetic field ranging from θ = 0°, i.e., with B aligned with the crystallographic ab-planes of the YBCO layer, towards ±90°, i.e., with B perpendicular to the wider surfaces of the 2G-HTS tape. The whole set of experimental data has been analysed using a novel multi-objective model capable of predicting a sole function I c(B, θ). This allows an accurate validation of the experimental data regardless of the fabrication differences and widths of the superconducting tapes. It is shown that, in spite of the wide set of differences between the fabrication and composition of the considered tapes, at liquid nitrogen temperature the magneto-angular dependence of the in-field critical current of YBCO-based 2G-HTS tapes, can be described by a universal function I c(f(B), θ), with a power law field dependence dominated by the Kim’s factor B/B 0, and an angular dependence moderated by the electron mass anisotropy ratio of the YBCO layer.

  14. Growth factor of Fe-doped semi-insulating InP by LP-MOCVD

    NASA Astrophysics Data System (ADS)

    Yan, Xuejin; Zhu, Hongliang; Wang, Wei; Xu, Guoyang; Zhou, Fan; Ma, Chaohua; Wang, Xiaojie; Tian, Huijiang; Zhang, Jingyuan; Wu, Rong Han; Wang, Qiming

    1998-08-01

    The semi-insulating InP has been grown using ferrocene as a dopant source by low pressure MOCVD. Fe doped semi-insulating InP material whose resistivity is equal to 2.0 X 108(Omega) *cm and the breakdown field is greater than 4.0 X 104Vcm-1 has been achieved. It is found that the magnitude of resistivity increases with growing pressure enhancement under keeping TMIn, PH3, ferrocene [Fe(C5H5)2] flow constant at 620 degrees Celsius growth temperature. Moreover, the experimental results which resistivity varies with ferrocene mole fraction are given. It is estimated that active Fe doping efficiency, (eta) , is equal to 8.7 X 10-4 at 20 mbar growth pressure and 620 degrees Celsius growth temperature by the comparison of calculated and experimental results.

  15. Microwave surface resistance of MgB2

    NASA Astrophysics Data System (ADS)

    Zhukov, A. A.; Purnell, A.; Miyoshi, Y.; Bugoslavsky, Y.; Lockman, Z.; Berenov, A.; Zhai, H. Y.; Christen, H. M.; Paranthaman, M. P.; Lowndes, D. H.; Jo, M. H.; Blamire, M. G.; Hao, Ling; Gallop, J.; MacManus-Driscoll, J. L.; Cohen, L. F.

    2002-04-01

    The microwave power and frequency dependence of the surface resistance of MgB2 films and powder samples were studied. Sample quality is relatively easy to identify by the breakdown in the ω2 law for poor-quality samples at all temperatures. The performance of MgB2 at 10 GHz and 21 K was compared directly with that of high-quality YBCO films. The surface resistance of MgB2 was found to be approximately three times higher at low microwave power and showed an onset of nonlinearity at microwave surface fields ten times lower than the YBCO film. It is clear that MgB2 films are not yet optimized for microwave applications.

  16. Flux Pinning Enhancement in YBa2Cu3O7-x Films with BaSnO3 Nanoparticles

    DTIC Science & Technology

    2008-10-01

    SUPERCONDUCTOR SCIENCE AND TECHNOLOGY Supercond. Sci. Technol. 19 (2006) L37 –L41 doi:10.1088/0953-2048/19/10/L01 RAPID COMMUNICATION Flux pinning enhancement in...2006 Online at stacks.iop.org/SUST/19/ L37 Abstract Nanoparticles of BaSnO3 were incorporated into YBa2Cu3O7−x (YBCO) films on LaAlO3 substrates for...0953-2048/06/100037+05$30.00 © 2006 IOP Publishing Ltd Printed in the UK L37 1 Rapid Communication materials and sintered together to form a composite

  17. Zn-site Substitution Effect in YbCo2Zn20

    NASA Astrophysics Data System (ADS)

    Kobayashi, Riki; Takamura, Haruki; Higa, Yasuyuki; Ikeda, Yoichi; Matsubayashi, Kazuyuki; Uwatoko, Yoshiya; Yoshizawa, Hideki; Aso, Naofumi

    2017-04-01

    We have investigated the substitution effect of YbCo2(Zn1-xTx)20 (T = Cu, Ga, and Cd) systems by using the experiments of X-ray powder diffraction (XRPD), specific heat, magnetic susceptibility, magnetization, and electrical resistivity in order to find out a material that approaches a quantum critical point by chemical pressure. The XRPD and electrical resistivity measurements clarify that the Cu-substitution makes the lattice constants shrink and keeps the magnetic electrical resistivity high, while the Ga- and the Cd-substitution show opposite relation of the Cu-substitution. However, we could not detect clear substitution effect in the specific heat, magnetic susceptibility, and magnetization measurements of Cu-substitution system within our experiments. It is necessary that to study the Cu-substitution samples that have higher x value at lower temperature.

  18. Microstructure of epitaxial ferroelectric/metal oxide electrode thin film heterostructures on LaAlO{sub 3} and silicon

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ghonge, S.G.; Goo, E.; Ramesh, R.

    1994-12-31

    TEM and X-ray diffraction studies of PZT, PLZT, lead titanate and bismuth titanate ferroelectric thin films and YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}(YBCO), Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8}(BSCCO) and La{sub 0.5}Sr{sub 0.5}CoO{sub 3}(LSCO) electrically conductive oxide thin films, that are sequentially deposited by pulsed laser ablation, show that these films may be deposited epitaxially onto LaAlO{sub 3}(LAO) or Si substrates. The conductive oxides are promising candidates for use is electrodes in place of metal electrodes in integrated ferroelectric device applications. The oxide electrodes are more chemically compatible with the ferroelectric films. High resolution electron microscopy his been used to investigate the interfacemore » between the ferroelectric and metal oxide thin films and no reaction was detected. Epitaxial growth is possible due to the similar crystal structures and the small lattice mismatch. The lattice mismatch that is present causes the domains in the ferroelectric films to be preferentially oriented and in the case of lead titanate, the film is single domain. These films may also have potential applications in integrated optical devices.« less

  19. High rate DC-reactive sputter deposition of Y 2O 3 film on the textured metal substrate for the superconducting coated conductor

    NASA Astrophysics Data System (ADS)

    Kim, Ho-Sup; Park, Chan; Ko, Rock-Kil; Shi, Dongqui; Chung, Jun-Ki; Ha, Hong-Soo; Park, Yu-Mi; Song, Kyu-Jeong; Youm, Do-Jun

    2005-10-01

    Y2O3 film was directly deposited on Ni-3at%W substrate by DC reactive sputtering. DC reactive sputtering was carried out using metallic Y target and water vapor for oxidizing the elements of metallic target on the substrate. The detailed conditions of DC reactive sputtering for depositions of Y2O3 films were investigated. The window of water vapor for proper growth of Y2O3 films was determined by sufficient oxidations of the Y2O3 films and the non-oxidation of the target surface, which was required for high rate sputtering. The window turned out to be fairly wide in the chamber used. As the sputtering power was raised, the deposition rate increased without narrowing the window. The fabricated Y2O3 films showed good texture qualities and surface morphologies. The YBCO film deposited directly on the Y2O3 buffered Ni-3at%W substrate showed Tc, Ic (77 K, self field), and Jc (77 K, self field) of 89 K, 64 A/cm and 1.1 MA/cm2, respectively.

  20. Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mintairov, S. A., E-mail: mintairov@scell.ioffe.ru; Kalyuzhnyy, N. A.; Nadtochiy, A. M.

    The deposition of In{sub x}Ga{sub 1–x}As with an indium content of 0.3–0.5 and an average thickness of 3–27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such structures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the photoluminescence peak for the hybrid InGaAs quantum well–dots nanostructures varies from 950 to 1100 nm. The optimal average In{sub x}Ga{sub 1–x}As thicknesses andmore » compositions at which the emission wavelength is the longest with a high quantum efficiency retained are determined.« less

  1. Conductor-backed coplanar waveguide resonators of Y-Ba-Cu-O and Tl-Ba-Ca-Cu-O on LaAlO3

    NASA Technical Reports Server (NTRS)

    Miranda, F. A.; Bhasin, K. B.; Stan, M. A.; Kong, K. S.; Itoh, T.

    1992-01-01

    Conductor-backed coplanar waveguide (CBCPW) resonators operating at 10.8 GHz have been fabricated from Tl-Ba-Ca-O (TBCCO) and Y-Ba-Cu-O (YBCO) thin films on LaAlO3. The resonators consist of a coplanar waveguide (CPW) patterned on the superconducting film side of the LaAlO3 substrate with a gold ground plane coated on the opposite side. These resonators were tested in the temperature range from 14 to 106 K. At 77 K, the best of our TBCCO and YBCO resonators have an unloaded quality factor (Qo) 7 and 4 times, respectively, larger than that of a similar all-gold resonator. In this study, the Qo's of the TBCCO resonators were larger than those of their YBCO counterparts throughout the aforementioned temperature range.

  2. Large pinning forces and matching effects in YBa2Cu3O7-δ thin films with Ba2Y(Nb/Ta)O6 nano-precipitates

    PubMed Central

    Opherden, Lars; Sieger, Max; Pahlke, Patrick; Hühne, Ruben; Schultz, Ludwig; Meledin, Alexander; Van Tendeloo, Gustaaf; Nast, Rainer; Holzapfel, Bernhard; Bianchetti, Marco; MacManus-Driscoll, Judith L.; Hänisch, Jens

    2016-01-01

    The addition of mixed double perovskite Ba2Y(Nb/Ta)O6 (BYNTO) to YBa2Cu3O7−δ (YBCO) thin films leads to a large improvement of the in-field current carrying capability. For low deposition rates, BYNTO grows as well-oriented, densely distributed nanocolumns. We achieved a pinning force density of 25 GN/m3 at 77 K at a matching field of 2.3 T, which is among the highest values reported for YBCO. The anisotropy of the critical current density shows a complex behavior whereby additional maxima are developed at field dependent angles. This is caused by a matching effect of the magnetic fields c-axis component. The exponent N of the current-voltage characteristics (inversely proportional to the creep rate S) allows the depinning mechanism to be determined. It changes from a double-kink excitation below the matching field to pinning-potential-determined creep above it. PMID:26887291

  3. Large pinning forces and matching effects in YBa2Cu3O7-δ thin films with Ba2Y(Nb/Ta)O6 nano-precipitates

    NASA Astrophysics Data System (ADS)

    Opherden, Lars; Sieger, Max; Pahlke, Patrick; Hühne, Ruben; Schultz, Ludwig; Meledin, Alexander; van Tendeloo, Gustaaf; Nast, Rainer; Holzapfel, Bernhard; Bianchetti, Marco; MacManus-Driscoll, Judith L.; Hänisch, Jens

    2016-02-01

    The addition of mixed double perovskite Ba2Y(Nb/Ta)O6 (BYNTO) to YBa2Cu3O7-δ (YBCO) thin films leads to a large improvement of the in-field current carrying capability. For low deposition rates, BYNTO grows as well-oriented, densely distributed nanocolumns. We achieved a pinning force density of 25 GN/m3 at 77 K at a matching field of 2.3 T, which is among the highest values reported for YBCO. The anisotropy of the critical current density shows a complex behavior whereby additional maxima are developed at field dependent angles. This is caused by a matching effect of the magnetic fields c-axis component. The exponent N of the current-voltage characteristics (inversely proportional to the creep rate S) allows the depinning mechanism to be determined. It changes from a double-kink excitation below the matching field to pinning-potential-determined creep above it.

  4. ZnSe Window Layers for GaAs and GaInP2 Solar Cells

    NASA Technical Reports Server (NTRS)

    Olsen, Larry C.

    1997-01-01

    This report concerns studies of the use of n-type ZnSe as a window layer for n/p GaAs and GaInP2 solar cells. Emphasis was placed in this phase of the project on characterizing the interface between n-type ZnSe films grown on epi-GaAs films grown onto single crystal GaAs. Epi-GaAs and heteroepitaxial ZnSe films were grown by MOCVD with a Spire 50OXT Reactor. After growing epitaxial GaAs films on single crystal GaAs wafers, well-oriented crystalline ZnSe films were grown by MOCVD. ZnSe films were grown with substrate temperatures ranging from 250 C to 450 C. Photoluminescence studies carried out by researchers at NASA Lewis determined that the surface recombination velocity at a GaAs surface was significantly reduced after the deposition of a heteroepitaxial layer of ZnSe. The optimum temperature for ZnSe deposition appears to be on the order of 350 C.

  5. Effect of annealing time and NH3 flow on GaN films deposited on amorphous SiO2 by MOCVD

    NASA Astrophysics Data System (ADS)

    Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Xu, Bingshe

    2018-05-01

    GaN polycrystalline films were successfully grown on amorphous SiO2 by metal-organic chemical vapour deposition to fabricate transferable devices using inorganic films. Field-emission scanning electron microscopy images show that by prolonging the annealing time, re-evaporation is enhanced, which reduced the uniformity of the nucleation layer and GaN films. X-ray diffraction patterns indicate that the decomposition rate of the nucleation layer increases when the annealing flow rate of NH3 is 500 sccm, which makes the unstable plane and amorphous domains decompose rapidly, thereby improving the crystallinity of the GaN films. Photoluminescence spectra also indicate the presence of fewer defects when the annealing flow rate of NH3 is 500 sccm. The excellent crystal structure of the GaN films grown under optimized conditions was revealed by transmission electron microscopy analysis. More importantly, the crystal structure and orientation of GaN grown on SiO2 are the same as that of GaN grown on conventional sapphire substrate when a buffer layer is used. This work can aid in the development of transferable devices using GaN films.

  6. Atomic and electronic structures of BaHfO3-doped TFA-MOD-derived YBa2Cu3O7-δ thin films

    NASA Astrophysics Data System (ADS)

    Molina-Luna, Leopoldo; Duerrschnabel, Michael; Turner, Stuart; Erbe, Manuela; Martinez, Gerardo T.; Van Aert, Sandra; Holzapfel, Bernhard; Van Tendeloo, Gustaaf

    2015-11-01

    Tailoring the properties of oxide-based nanocomposites is of great importance for a wide range of materials relevant for energy technology. YBa2Cu3O7-δ (YBCO) superconducting thin films containing nanosized BaHfO3 (BHO) particles yield a significant improvement of the magnetic flux pinning properties and a reduced anisotropy of the critical current density. These films were prepared by chemical solution deposition (CSD) on (100) SrTiO3 (STO) substrates yielding critical current densities up to 3.6 MA cm-2 at 77 K and self-field. Transport in-field J c measurements demonstrated a high pinning force maximum of around 6 GN/m3 for a sample annealed at T = 760 °C that has a doping of 12 mol% of BHO. This sample was investigated by scanning transmission electron microscopy (STEM) in combination with electron energy-loss spectroscopy (EELS) yielding strain and spectral maps. Spherical BHO nanoparticles of 15 nm in size were found in the matrix, whereas the particles at the interface were flat. A 2 nm diffusion layer containing Ti was found at the YBCO (BHO)/STO interface. Local lattice deformation mapping at the atomic scale revealed crystal defects induced by the presence of both sorts of BHO nanoparticles, which can act as pinning centers for magnetic flux lines. Two types of local lattice defects were identified and imaged: (i) misfit edge dislocations and (ii) Ba-Cu-Cu-Ba stacking faults (Y-248 intergrowths). The local electronic structure and charge transfer were probed by high energy resolution monochromated electron energy-loss spectroscopy. This technique made it possible to distinguish superconducting from non-superconducting areas in nanocomposite samples with atomic resolution in real space, allowing the identification of local pinning sites on the order of the coherence length of YBCO (˜1.5 nm) and the determination of 0.25 nm dislocation cores.

  7. Temperature dependence of lower critical field of YBCO superconductor

    NASA Astrophysics Data System (ADS)

    Rani, Poonam; Hafiz, A. K.; Awana, V. P. S.

    2018-05-01

    We report the detailed study of the temperature dependence of the lower critical field (Hc1) of the YBa2Cu3O7 superconductor by magnetization measurements. The curve shows the multiband gap behavior of the sample. It is found that the sample is not a single BCS type superconductor. Hc1 is measured as the point at which the curve deviates from a Meissner-like linear M(H) curve to a nonlinear path. The Hc1 for YBCO at different temperatures from 10K to 85K has been determined by magnetization measurements M(H) with applied field parallel to the c-axis. The sample phase purity has been confirmed by Rietveld fitted X-ray diffraction data. The amplitude (1-17Oe) dependent AC susceptibility confirms the granular nature of superconducting compound. Using Bean model we calculated the temperature dependency of inter-grain critical current density and Jc(0) is found as 699.14kAcm-2.

  8. Fatigue and retention in ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O heterostructures

    NASA Astrophysics Data System (ADS)

    Ramesh, R.; Chan, W. K.; Wilkens, B.; Gilchrist, H.; Sands, T.; Tarascon, J. M.; Keramidas, V. G.; Fork, D. K.; Lee, J.; Safari, A.

    1992-09-01

    Fatigue and retention characteristics of ferroelectric lead zirconate titanate thin films grown with Y-Ba-Cu-O(YBCO) thin-film top and bottom electrodes are found to be far superior to those obtained with conventional Pt top electrodes. The heterostructures reported here have been grown in situ by pulsed laser deposition on yttria-stabilized ZrO2 buffer [100] Si and on [001] LaAlO3. Both the a- and c-axis orientations of the YBCO lattice have been used as electrodes. They were prepared using suitable changes in growth conditions.

  9. Growth and characterization of III-V epitaxial films

    NASA Astrophysics Data System (ADS)

    Tripathi, A.; Adamski, J.

    1991-11-01

    Investigations were conducted on the growth of epitaxial layers using an Organo Metallic Chemical Vapor Deposition technique of selected III-V materials which are potentially useful for photonics and microwave devices. RL/ERX's MOCVD machine was leak checked for safety. The whole gas handling plumbing system has been leak checked and the problems were reported to the manufacturer, CVD Equipment Corporation of Dear Park, NY. CVD Equipment Corporation is making an effort to correct these problems and also supply the part according to our redesign specifications. One of the main emphasis during this contract period was understanding the operating procedure and writing an operating manual for this MOCVD machine. To study the dynamic fluid flow in the vertical reactor of this MOCVD machine, an experimental apparatus was designed, tested, and put together. This study gave very important information on the turbulent gas flow patterns in this vertical reactor. The turbulent flow affects the epitaxial growth adversely. This study will also help in redesigning a vertical reactor so that the turbulent gas flow can be eliminated.

  10. Thickness effect of Gd2Zr2O7 buffer layer on performance of YBa2Cu3O7-δ coated conductors

    NASA Astrophysics Data System (ADS)

    Qiu, Wenbin; Fan, Feng; Lu, Yuming; Liu, Zhiyong; Bai, Chuanyi; Guo, Yanqun; Cai, Chuanbing

    2014-12-01

    Bilayer buffer architecture of Gd2Zr2O7 (GZO)/Y2O3 was prepared on the biaxially textured tape of Ni-5 at% W (NiW) by reactive sputtering deposition technique. The buffer layer of GZO films were deposited with different thicknesses on Y2O3 seeding layer with a given thickness of 20 nm. According to the results of φ-scan, the in-plane FWHMs of GZO films decreased and then reversed with increasing thickness of GZO, which corresponded with the in-plane FWHMs and superconducting properties of YBa2Cu3O7-δ (YBCO) films. Reflection High-Energy Electron Diffraction (RHEED) was carried out to examine the surface texture of GZO films and the deteriorated surface alignment was found for thicker films. The thickness effect of GZO on performance of YBCO is the coupling result of surface texture and blocking effect caused by thickness. With the balance of these two factors, the YBCO/GZO(120 nm)/Y2O3/NiW architecture exhibit relatively high performance with the transition temperature Tc of 92 K, a transition width ΔTc below 1 K, and a critical current density Jc of 0.65 MA/cm2.

  11. The role of a-axis grains in the transition to the normal state of YBa{sub 2}Cu{sub 3}O{sub 7−δ} films and of 2G-coated conductors when induced by high electrical current densities

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bernstein, P., E-mail: pierre.bernstein@ensicaen.fr; Harnois, C.; Mc Loughlin, C.

    The influence of surface defects, in particular of a-axis grains, on the transition to the normal state induced by high current densities in YBa{sub 2}Cu{sub 3}O{sub 7−δ} (YBCO) thin films and in a commercial 2G-coated conductor is investigated. For that purpose, the surface of the samples is observed by scanning electron microscopy and isothermal current-voltage curves are measured at different temperatures with pulsed currents up to the quenching value I*. The results show that the ratio of I* to the critical current is large if a-axis grains are not visible at the surface of the YBCO films, while it ismore » much lower if the surface includes a-axis grains as this is the case for the coated conductor. The connection between the transition onset and the vortex dynamics, as well as the role of the a-axis grains in this process are discussed. The relation between the I* values obtained from thermal calculations and those resulting from vortex dynamics considerations is also discussed, as well as the possible consequences suggested by this work for the different applications of the coated conductors.« less

  12. Theory of the vortex matter transformations in high-Tc superconductor YBCO.

    PubMed

    Li, Dingping; Rosenstein, Baruch

    2003-04-25

    Flux line lattice in type II superconductors undergoes a transition into a "disordered" phase such as vortex liquid or vortex glass, due to thermal fluctuations and random quenched disorder. We quantitatively describe the competition between the thermal fluctuations and the disorder using the Ginzburg-Landau approach. The following T-H phase diagram of YBCO emerges. There are just two distinct thermodynamical phases, the homogeneous and the crystalline one, separated by a single first order transition line. The line, however, makes a wiggle near the experimentally claimed critical point at 12 T. The "critical point" is reinterpreted as a (noncritical) Kauzmann point in which the latent heat vanishes and the line is parallel to the T axis. The magnetization, the entropy, and the specific heat discontinuities at melting compare well with experiments.

  13. Test Status for Proposed Coupling of a Gravitational Force to Extreme Type II YBCO Ceramic Superconductors

    NASA Technical Reports Server (NTRS)

    Noever, David; Li, Ning; Robertson, Tony; Koczor, Ron; Brantley, Whitt

    1999-01-01

    As a Bose condensate, superconductors provide novel conditions for revisiting previously proposed couplings between electromagnetism and gravity. Strong variations in Cooper pair electron density, large conductivity and low magnetic permeability define superconductive and degenerate condensates without the traditional density limits imposed by the Fermi energy (about 10-6 g/cu cm). Recent experiments have reported anomalous weight loss for a test mass suspended above a rotating Type II, YBCO superconductor, with the percentage change (0.05-2.1%) independent of the test mass' chemical composition and diamagnetic properties. A variation of 5 parts per 10(exp 4) was reported above a stationary (non-rotating) superconductor. In the present experiments reported using a sensitive gravimeter (resolution <10(exp -9) unit gravity or variation of 10(exp -6) cm/sq s in accelerations), bulk YBCO superconductors were stably levitated in a DC magnetic field (0.6 Tesla) subject to lateral AC fields (60 Gauss at 60 Hz) and rotation. With magnetic shielding, thermal control and buoyancy compensation, changes in acceleration were measured to be less than 2 parts in 10(exp 8) of the normal gravitational acceleration. This result puts new limits on the strength and range of the proposed coupling between high-Tc superconductors and gravity. Latest test results will be reported, along with status for future improvements and prospects.

  14. Fabrication and characterization of {110}-oriented Pb(Zr,Ti)O3 thin films on Pt/SiO2/Si substrates using PdO//Pd buffer layer

    NASA Astrophysics Data System (ADS)

    Oshima, Naoya; Uchiyama, Kiyoshi; Ehara, Yoshitaka; Oikawa, Takahiro; Ichinose, Daichi; Tanaka, Hiroki; Sato, Tomoya; Uchida, Hiroshi; Funakubo, Hiroshi

    2017-10-01

    A strongly {110}-oriented perovskite-type thin film of tetragonal Pb(Zr0.4Ti0.6)O3 (PZT) was successfully obtained on a (100)Si substrate using a {101}PdO//{111}Pd thin film as a buffer layer. The {101}PdO//{111}Pd thin film buffer layer was obtained by oxidizing {111}Pd after depositing {111}Pd on a {111}Pt/TiO x /SiO2/{100}Si substrate. Using this buffer layer, a {110} c -oriented SrRuO3 (SRO) thin film was deposited by sputtering as a bottom electrode of PZT thin films. Subsequently, the {110}-oriented PZT thin film can be deposited on a (110) c SRO thin film by metal-organic chemical deposition (MOCVD) and its properties can be compared with those of PZT thin films with other orientations of {100} and {111}. Among the {100}, {110}, {111}-oriented PZT films, the {100}-oriented one showed the largest remnant polarization, which is in good agreement with those of the PZTs epitaxially grown in the 〈100〉, 〈110〉, and 〈111〉 directions. The other properties, i.e., piezoelectricity and dielectric constants, also showed similar anisotropic tendencies, which is in good agreement with the data reported in the epitaxially grown PZTs.

  15. Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

    NASA Astrophysics Data System (ADS)

    Reddy, Pramod; Washiyama, Shun; Kaess, Felix; Kirste, Ronny; Mita, Seiji; Collazo, Ramon; Sitar, Zlatko

    2017-12-01

    A theoretical framework that provides a quantitative relationship between point defect formation energies and growth process parameters is presented. It enables systematic point defect reduction by chemical potential control in metalorganic chemical vapor deposition (MOCVD) of III-nitrides. Experimental corroboration is provided by a case study of C incorporation in GaN. The theoretical model is shown to be successful in providing quantitative predictions of CN defect incorporation in GaN as a function of growth parameters and provides valuable insights into boundary phases and other impurity chemical reactions. The metal supersaturation is found to be the primary factor in determining the chemical potential of III/N and consequently incorporation or formation of point defects which involves exchange of III or N atoms with the reservoir. The framework is general and may be extended to other defect systems in (Al)GaN. The utility of equilibrium formalism typically employed in density functional theory in predicting defect incorporation in non-equilibrium and high temperature MOCVD growth is confirmed. Furthermore, the proposed theoretical framework may be used to determine optimal growth conditions to achieve minimum compensation within any given constraints such as growth rate, crystal quality, and other practical system limitations.

  16. Optimization of the deposition conditions and structural characterization of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7-x} thin superconducting films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chrzanowski, J.; Meng-Burany, S.; Xing, W.B.

    1994-12-31

    Two series of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub z} thin films deposited on (001) LaAlO{sub 3} single crystals by excimer laser ablation under two different protocols have been investigated. The research has yielded well defined deposition conditions in terms of oxygen partial pressure p(O{sub 2}) and substrate temperature of the deposition process T{sub h}, for the growth of high quality epitaxial films of YBCO. The films grown under conditions close to optimal for both j{sub c} and T{sub c} exhibited T{sub c}{ge}91 K and j{sub c}{ge}4 x 10{sup 6} A/cm{sup 2}, at 77 K. Close correlations between the structural quality ofmore » the film, the growth parameters (p(O{sub 2}), T{sub h}) and j{sub c} and T{sub c} have been found.« less

  17. Preparation and Characterization of High Temperature Superconductor Film Surfaces

    DTIC Science & Technology

    1993-10-27

    Lanthanum Strontium Copper Oxide (LSCO) was also tested as a normal metal overlayer because of its compatibility with the high deposition temperature for...fabricate YBCO/ISCO SEB junctions using a variety of step heights (110 nm - 330 nm) on Neodymium Gallate (NGO) substrates. NGO was chosen as a...substrate because of its excellent lattice match to YBCO and its lack of crystal twinning Twinning had been a drawback of Lanthanum Aluminate (LAO)- L

  18. High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer

    NASA Astrophysics Data System (ADS)

    Lin, Jia-Yong; Pei, Yan-Li; Zhuo, Yi; Chen, Zi-Min; Hu, Rui-Qin; Cai, Guang-Shuo; Wang, Gang

    2016-11-01

    In this study, the high performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) with Al-doped ZnO (AZO) transparent conductive layers (TCLs) has been demonstrated. The AZO-TCLs were fabricated on the n+-InGaN contact layer by metal organic chemical vapor deposition (MOCVD) using H2O as an oxidizer at temperatures as low as 400 °C without any post-deposition annealing. It shows a high transparency (98%), low resistivity (510-4 Ω·cm), and an epitaxial-like excellent interface on p-GaN with an n+-InGaN contact layer. A forward voltage of 2.82 V @ 20 mA was obtained. Most importantly, the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL (LED-III), and by 28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O2 as an oxidizer (LED-II), respectively. The results indicate that the AZO-TCL grown by MOCVD using H2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application. Project supported by the National Natural Science Foundation of China (Grant Nos. 61204091, 61404177, 51402366, and U1201254) and the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015B010132006).

  19. Specific Heat and Thermal Diffusivity of YBCO Coated Conductors

    NASA Astrophysics Data System (ADS)

    Naito, Tomoyuki; Fujishiro, Hiroyuki; YasuhisaYamamura; Saito, Kazuya; Okamoto, Hiroshi; Hayashi, Hidemi; Gosho, Yoshihiro; Ohkuma, Takeshi; Shiohara, Yuh

    We have measured the temperature dependence of specific heat,C(T), for Ag deposited YBCO coated conductor (YCC),YCC reinforced by a thin Cutape (YCC-Cu), andthe Hastelloy substrate with buffer layer. C(T) of HastelloyC-276 with buffer layer agrees well with the reported oneof HastelloyC-276, indicating that the contribution of the buffer layer to the measured C(T) is negligibly small. C(T)of both YCC and YCC-Cu tapes was successfully reproduced by the simple sum rule using the C(T) values reported for Hastelloy, Ag and Cu. The results demonstrate that C(T) of various YCC tapes can be estimated using the reported C(T)of constitutional materials. The estimated thermal diffusivity, a = K/C, at 300K of YCC, which was estimated using the thermal conductivity, K, did not agree with the reported a of Ag. This resultwas in consistent with the fact that the applied heat flew through the Aglayer, suggesting that a relation of a = K/Cfor homogeneous material cannot be applicable for the layered material such as YCC.

  20. Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Mack, M. P.; Abare, A. C.; Hansen, M.; Kozodoy, P.; Keller, S.; Mishra, U.; Coldren, L. A.; DenBaars, S. P.

    1998-06-01

    Room temperature (RT) pulsed operation of blue (420 nm) nitride-based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates has been demonstrated. Atmospheric pressure MOCVD was used to grow the active region of the device which consisted of a 10 pair In 0.21Ga 0.79N (2.5 nm)/In 0.07Ga 0.93N (5 nm) InGaN MQW. Threshold current densities as low as 12.6 kA/cm 2 were observed for 10×1200 μm lasers with uncoated reactive ion etched (RIE) facets. The emission is strongly TE polarized and has a sharp transition in the far-field pattern above threshold. Laser diodes were tested under pulsed conditions lasted up to 6 h at room temperature.

  1. Electronic State Distributions of YBa2Cu3O7-x Laser Ablated Plumes

    DTIC Science & Technology

    2008-09-01

    deposited on buffered metal substrates using gas phase techniques such as pulsed laser deposition (PLD) or metal -oxide chem- ical vapor deposition...along the desired current direction. This grain orientation has been successfully achieved by depositing YBCO on a metal tape substrate coated with a...Reeves, K. Lenseth, and V. Selvamanickam. “Texture Development and Superconducting Properties of YBCO Thick Films Deposited on Buffered Metal Substrates

  2. Advanced indium phosphide based monolithic integration using quantum well intermixing and MOCVD regrowth

    NASA Astrophysics Data System (ADS)

    Raring, James W.

    The proliferation of the internet has fueled the explosive growth of telecommunications over the past three decades. As a result, the demand for communication systems providing increased bandwidth and flexibility at lower cost continues to rise. Lightwave communication systems meet these demands. The integration of multiple optoelectronic components onto a single chip could revolutionize the photonics industry. Photonic integrated circuits (PIC) provide the potential for cost reduction, decreased loss, decreased power consumption, and drastic space savings over conventional fiber optic communication systems comprised of discrete components. For optimal performance, each component within the PIC may require a unique epitaxial layer structure, band-gap energy, and/or waveguide architecture. Conventional integration methods facilitating such flexibility are increasingly complex and often result in decreased device yield, driving fabrication costs upward. It is this trade-off between performance and device yield that has hindered the scaling of photonic circuits. This dissertation presents high-functionality PICs operating at 10 and 40 Gb/s fabricated using novel integration technologies based on a robust quantum-well-intermixing (QWI) method and metal organic chemical vapor deposition (MOCVD) regrowth. We optimize the QWI process for the integration of high-performance quantum well electroabsorption modulators (QW-EAM) with sampled-grating (SG) DBR lasers to demonstrate the first widely-tunable negative chirp 10 and 40 Gb/s EAM based transmitters. Alone, QWI does not afford the integration of high-performance semiconductor optical amplifiers (SOA) and photodetectors with the transmitters. To overcome this limitation, we have developed a novel high-flexibility integration scheme combining MOCVD regrowth with QWI to merge low optical confinement factor SOAs and 40 Gb/s uni-traveling carrier (UTC) photodiodes on the same chip as the QW-EAM based transmitters. These high

  3. An Explanation for Bends of 1-Dimensional Nanorods

    NASA Astrophysics Data System (ADS)

    Mukaida, Masashi; Ichinose, Ataru; Mele, Paolo; Mtsumoto, Kaname; Horii, Shigeru; Yoshida, Yutaka

    Growth of artificial pinning centers (APCs) in YBa2Cu3O7-J (YBCO) films are discussed. The APCs used in this research are BaZrO3 and BaSnO3 nanorods which are reported by Mele et al. TEM images show these nanorods graduallybend accordinglywith approachingtoasurfaceof films. This featureshowedagrowth patternlikeafirework. Weexplainthe featureofthe nanorodsas follows;Atanearlygrowth stage, filmsgrowinalayerbylayergrowth mode. The surface of the films is flat and very smooth. After the early growth stage, the film surface gradually becomes rough, indicating the film grows in a Stranski-Krastanov growth mode. This roughness was caused by a spiral growth of films with manysteps. At the step of YBCO films, nanorod materials such as BaZrO3 are supplied from one direction. Then, the center of nanorods sifts to the same direction of the step flow. Then, the nanorods bend to the edge of the grains in the films. As a grain in spiral growth had a convex surface, nanorods bent to the direction perpendicular to the grain surface. Finally, nanorods in rough grains form firework structures.

  4. The controlled growth of GaN microrods on Si(111) substrates by MOCVD

    NASA Astrophysics Data System (ADS)

    Foltynski, Bartosz; Garro, Nuria; Vallo, Martin; Finken, Matthias; Giesen, Christoph; Kalisch, Holger; Vescan, Andrei; Cantarero, Andrés; Heuken, Michael

    2015-03-01

    In this paper, a selective area growth (SAG) approach for growing GaN microrods on patterned SiNx/Si(111) substrates by metal-organic chemical vapor deposition (MOCVD) is studied. The surface morphology, optical and structural properties of vertical GaN microrods terminated by pyramidal shaped facets (six { 10 1 bar 1} planes) were characterized using scanning electron microscopy (SEM), room temperature photoluminescence (PL) and Raman spectroscopy, respectively. Measurements revealed high-quality GaN microcolumns grown with silane support. Characterized structures were grown nearly strain-free (central frequency of Raman peak of 567±1 cm-1) with crystal quality comparable to bulk crystals (FWHM=4.2±1 cm-1). Such GaN microrods might be used as a next-generation device concept for solid-state lighting (SSL) applications by realizing core-shell InGaN/GaN multi-quantum wells (MQWs) on the n-GaN rod base.

  5. Adsorbed Molecules and Surface Treatment Effect on Optical Properties of ZnO Nanowires Grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Jabri, S.; Souissi, H.; Sallet, V.; Lusson, A.; Meftah, A.; Galtier, P.; Oueslati, M.

    2017-07-01

    We have investigated the optical properties of ZnO nanowires grown by metalorganic chemical vapor deposition (MOCVD) with nitrous oxide (N2O) as oxygen precursor. Photoluminescence (PL) and Raman measurements showed the influence of adsorbed molecules on the optical properties. Low-temperature (4 K) PL studies on the surface exciton (SX) at 3.3660 eV elucidated the nature and origin of this emission. In particular, surface treatment by annealing at high temperature under inert gas reduced the emission intensity of SX. Raman vibrational spectra proved that presence of a considerable amount of adsorbed molecules on the surface of ZnO nanowires plays a key role in the occurrence of surface excitons.

  6. Comparison of electrical properties and deep traps in p-AlxGa1-xN grown by molecular beam epitaxy and metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Dabiran, A. M.; Chow, P. P.; Wowchak, A. M.; Lee, In-Hwan; Ju, Jin-Woo; Pearton, S. J.

    2009-10-01

    The electrical properties, admittance spectra, microcathodoluminescence, and deep trap spectra of p-AlGaN films with an Al mole fraction up to 45% grown by both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were compared. The ionization energy of Mg increases from 0.15 to 0.17 eV in p-GaN to 0.3 eV in 45% Al p-AlGaN. In p-GaN films grown by MBE and MOCVD and in MOCVD grown p-AlGaN, we observed additional acceptors with a concentration an order lower than that of Mg acceptors, with a higher hole capture cross section and an ionization energy close to that of Mg. For some of the MBE grown p-AlGaN, we also detected the presence of additional acceptor centers, but in that case the centers were located near the p-AlGaN layer interface with the semi-insulating AlGaN buffer and showed activation energies considerably lower than those of Mg.

  7. The effects of space radiation on thin films of YBa2Cu3O(7-x)

    NASA Technical Reports Server (NTRS)

    Herschitz, R.; Bogorad, A.; Bowman, C.; Seehra, S. S.; Mogro-Campero, A.; Turner, L. G.

    1991-01-01

    This investigation had two objectives: (1) to determine the effects of space radiation on superconductor parameters that are most important in space applications; and (2) to determine whether this effect can be simulated with Co-60 gamma rays, the standard test method for space materials. Thin films of yttrium barium copper oxide (YBCO) were formed by coevaporation of Y, BaF2, and Cu and post-annealing in wet oxygen at 850 C for 3.5 h. The substrate used was (100) silicon with an evaporated zirconia buffer layer. The samples were characterized by four point probe electrical measurements as a function of temperature. The parameters measured were the zero resistance transition temperature T(sub c) and the room temperature resistance. The samples were then exposed to Co-60 gamma-rays in air and in pure nitrogen, and to 780 keV electrons, in air. The parameters were then remeasured. The results are summarized. The results indicate little or no degradation in the parameters measured for samples exposed up to 10 Mrads of gamma-rays in nitrogen. However, complete degradation is preliminarily attributed to the high level of ozone generated in the chamber by the gamma-ray interaction with air. It can be concluded that: (1) the electron component of space radiation does not degrade the critical temperature of the YBCO films described, at least for energies around 800 keV and doses similar to those received by surface materials on spacecraft in typical remote sensing missions; and (2) for qualifying this and other superconducting materials against the space-radiation threat the standard test method used in the aerospace industry, namely, exposure to Co-60 gamma-rays in air, may require some further investigation. As a minimum, the sample must be either in vacuum or in positive nitrogen pressure.

  8. AC loss in YBCO coated conductors at high dB/dt measured using a spinning magnet calorimeter (stator testbed environment)

    NASA Astrophysics Data System (ADS)

    Murphy, J. P.; Gheorghiu, N. N.; Bullard, T.; Haugan, T.; Sumption, M. D.; Majoros, M.; Collings, E. W.

    2017-09-01

    A new facility for the measurement of AC loss in superconductors at high dB/dt has been developed. The test device has a spinning rotor consisting of permanent magnets arranged in a Halbach array; the sample, positioned outside of this, is exposed to a time varying AC field with a peak radial field of 0.566 T. At a rotor speed of 3600 RPM the frequency of the AC field is 240 Hz, the radial dB/dt is 543 T/s and the tangential dB/dt is 249 T/s. Loss is measured using nitrogen boiloff from a double wall calorimeter feeding a gas flow meter. The system is calibrated using power from a known resistor. YBCO tape losses were measured in the new device and compared to the results from a solenoidal magnet AC loss system measurement of the same samples (in this latter case measurements were limited to a field of amplitude 0.1 T and a dB/dt of 100 T/s). Solenoidal magnet system AC loss measurements taken on a YBCO sample agreed with the Brandt loss expression associated with a 0-0.1 T Ic of 128 A. Subsequently, losses for two more YBCO tapes nominally identical to the first were individually measured in this spinning magnet calorimeter (SMC) machine with a Bmax of 0.566 T and dB/dt of up to 272 T/s. The losses, compared to a simplified version of the Brandt expression, were consistent with the average Ic expected for the tape in the 0-0.5 T range at 77 K. The eddy current contribution was consistent with a 77 K residual resistance ratio, RR, of 4.0. The SMC results for these samples agreed to within 5%. Good agreement was also obtained between the results of the SMC AC loss measurement and the solenoidal magnet AC loss measurement on the same samples.

  9. A new RE + 011 TSIG method for the fabrication of high quality and large size single domain YBCO bulk superconductors

    NASA Astrophysics Data System (ADS)

    Yang, W. M.; Chen, L. P.; Wang, X. J.

    2016-02-01

    High quality single domain YBCO bulk superconductors, 20 mm in diameter, have been fabricated using a new top seeded infiltration and growth method (called the RE + 011 TSIG method), with a new solid phase (Y2O3 + xBaCuO2) instead of the conventional Y2BaCuO5 solid phase, x = 0, 0.5, 1.0, 1.2, 1.5, 1.8, 2.0, 2.5, 3.0. The effects of different BaCuO2 contents x on the growth morphology, microstructure, and levitation force have been investigated. The results show that the levitation force of the YBCO bulks first increases and then decreases with increasing x, and reaches maximum levitation forces of about 49.2 N (77 K, 0.5 T, with the traditional liquid phase of YBa2Cu3O y + 3 BaCuO2 + 2 CuO) and 47 N (77.3 K, 0.5 T, with the new liquid phase of Y2O3 + 10 BaCuO2 + 6 CuO) when x = 1.2, which is much higher than that of the samples fabricated with the conventional solid phases (23 N). The average Y2BaCuO5 particle size is about 1 μm, which is much smaller than the 3.4 μm in the samples prepared with the conventional Y2BaCuO5 solid phase; this means that the flux pinning force of the sample can be improved by using the new solid phase. Based on this method, single domain YBCO bulks 40 mm, 59 mm, and 93 mm in diameter have also been fabricated using the TSIG process with the new solid phases (Y2O3 + 1.2BaCuO2). These results indicate that the new TSIG process developed by our lab is a very important and practical method for the fabrication of low cost, large size, and high quality single domain REBCO bulk superconductors.

  10. Architecture for high critical current superconducting tapes

    DOEpatents

    Jia, Quanxi; Foltyn, Stephen R.

    2002-01-01

    Improvements in critical current capacity for superconducting film structures are disclosed and include the use of, e.g., multilayer YBCO structures where individual YBCO layers are separated by a layer of an insulating material such as CeO.sub.2 and the like, a layer of a conducting material such as strontium ruthenium oxide and the like or by a second superconducting material such as SmBCO and the like.

  11. Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

    NASA Technical Reports Server (NTRS)

    Nouhi, A.; Radhakrishnan, G.; Katz, J.; Koliwad, K.

    1988-01-01

    Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

  12. Characterization of an Mg-implanted GaN p-i-n Diode

    DTIC Science & Technology

    2016-03-31

    unintentionally doped GaN layer was grown by metal organic chemical vapor deposition (MOCVD) on a n+ Ga -face c-oriented GaN substrate. The as-grown MOCVD film...their proper lattice sites. In the case of Mg implanted GaN , the Mg must replace Ga to result in p-type material. In many other semiconductor...Characterization of an Mg-implanted GaN p-i-n Diode Travis J. Anderson, Jordan D. Greenlee, Boris N. Feigelson, Karl D. Hobart, and Francis J

  13. High-Tc superconductor coplanar waveguide filter

    NASA Technical Reports Server (NTRS)

    Chew, Wilbert; Bajuk, Louis J.; Cooley, Thomas W.; Foote, Marc C.; Hunt, Brian D.; Rascoe, Daniel L.; Riley, A. L.

    1991-01-01

    Coplanar waveguide (CPW) low-pass filters made of YBa2Cu3O(7-delta) (YBCO) on LaAlO3 substrates, with dimensions suited for integrated circuits, were fabricated and packaged. A complete filter gives a true idea of the advantages and difficulties in replacing thin-film metal with a high-temperature superconductor in a practical circuit. Measured insertion losses in liquid nitrogen were superior to the loss of a similar thin-film copper filter throughout the 0- to 9.5-GHz passband. These results demonstrate the performance of fully patterned YBCO in a practical CPW structure after sealing in a hermetic package.

  14. The effects of space radiation on thin films of YBa2Cu3O(sub 7-x)

    NASA Technical Reports Server (NTRS)

    Herschitz, R.; Bogorad, A.; Bowman, C.; Seehra, S. S.; Mogro-Campero, A.; Turner, L. G.

    1990-01-01

    This investigation had two objectives: (1) to determine the effects of space radiation on superconductor parameters that are most important in space applications; and (2) to determine whether this effect can be simulated with Co-60 gamma rays, the standard test method for space materials. Thin films of yttrium barium copper oxide (YBCO) were formed by coevaporation of Y, BaF2, and Cu and post-annealing in wet oxygen at 850 C for 3.5 h. The substrate used was (100) silicon with an evaporated zirconia buffer layer. The samples were characterized by four point probe electrical measurements as a function of temperature. The parameters measured were the zero resistance transition temperature (T sub c) and the room temperature resistance. The samples were then exposed to Co-60 gamma-rays in air and in pure nitrogen, and to 780 keV electrons, in air. The parameters were then remeasured. The results are summarized. The results indicate little or no degradation in the parameters measured for samples exposed up to 10 Mrads of gamma-rays in nitrogen. However, complete degradation of samples exposed to 10-Mrad in air was observed. This degradation is preliminarily attributed to the high level of ozone generated in the chamber by the gamma-ray interaction with air. It can be concluded that: (1) the electron component of space radiation does not degrade the critical temperature of the YBCO films described, at least for energies around 800 keV and doses similar to those received by surface materials on spacecraft in typical remote sensing missions; and (2) for qualifying this and other superconducting materials against the space-radiation threat the standard test method in the aerospace industry, namely, exposure to Co-60 gamma-rays in air, may require some further investigation. As a minimum, the sample must be either in vacuum or in positive nitrogen pressure.

  15. Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mintairov, S. A., E-mail: mintairov@scell.ioffe.ru; Emelyanov, V. M.; Rybalchenko, D. V.

    Heterostructures of metamorphic GaInAs photovoltaic converters (PVCs) are on GaAs substrates by the metal-organic chemical vapor deposition (MOCVD) method. It is shown that using a multilayer metamorphic buffer with a step of 2.5% in indium content and layer thicknesses of 120 nm provides the high quality of bulk layers subsequently grown on the buffer up to an indium content of 24%. PVCs with a long-wavelength photosensitivity edge up to 1300 nm and a quantum efficiency of ~80% in the spectral range 1050–1100 nm are fabricated. Analysis of the open-circuit voltage of the PVCs and diffusion lengths of minority carriers inmore » the layers demonstrates that the density of misfit dislocations penetrating into the bulk layers increases at an indium content exceeding 10%.« less

  16. Effects of Mg pre-flow, memory, and diffusion on the growth of p-GaN with MOCVD (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Tu, Charng-Gan; Chen, Hao-Tsung; Chen, Sheng-Hung; Chao, Chen-Yao; Kiang, Yean-Woei; Yang, Chih-Chung

    2017-02-01

    In MOCVD growth, two key factors for growing a p-type structure, when the modulation growth or delta-doping technique is used, include Mg memory and diffusion. With high-temperature growth (>900 degree C), doped Mg can diffuse into the under-layer. Also, due to the high-pressure growth and growth chamber coating in MOCVD, plenty Mg atoms exist in the growth chamber for a duration after Mg supply is ended. In this situation, Mg doping continues in the following designated un-doped layers. In this paper, we demonstrate the study results of Mg preflow, memory, and diffusion. The results show that pre-flow of Mg into the growth chamber can lead to a significantly higher Mg doping concentration in growing a p-GaN layer. In other words, a duration for Mg buildup is required for high Mg incorporation. Based on SIMS study, we find that with the pre-flow growth, a high- and a low-doping p-GaN layer are formed. The doping concentration difference between the two layers is about 10 times. The thickness of the high- (low-) doping layer is about 40 (65) nm. The growth of the high-doping layer starts 10-15 min after Mg supply starts (Mg buildup time). The diffusion length of Mg into the AlGaN layer beneath (Mg content reduced to <5%) is about 10 nm. The memory time of Mg in the growth chamber is about 60 min, after which the Mg doping concentration is reduced to <1%.

  17. Growth and micro structural studies on Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) buffer layers

    NASA Technical Reports Server (NTRS)

    Srinivas, S.; Pinto, R.; Pai, S. P.; Dsousa, D. P.; Apte, P. R.; Kumar, D.; Purandare, S. C.; Bhatnagar, A. K.

    1995-01-01

    Microstructure of Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) of radio frequency magnetron sputtered buffer layers was studied at various sputtering conditions on Si (100), Sapphire and LaAlO3 (100) substrates. The effect of substrate temperatures up to 800 C and sputtering gas pressures in the range of 50 mTorr. of growth conditions was studied. The buffer layers of YSZ and STO showed a strong tendency for columnar growth was observed above 15 mTorr sputtering gas pressure and at high substrate temperatures. Post annealing of these films in oxygen atmosphere reduced the oxygen deficiency and strain generated during growth of the films. Strong c-axis oriented superconducting YBa2Cu3O7-x (YBCO) thin films were obtained on these buffer layers using pulsed laser ablation technique. YBCO films deposited on multilayers of YSZ and STO were shown to have better superconducting properties.

  18. Magnetic levitation and its application for education devices based on YBCO bulk superconductors

    NASA Astrophysics Data System (ADS)

    Yang, W. M.; Chao, X. X.; Guo, F. X.; Li, J. W.; Chen, S. L.

    2013-10-01

    A small superconducting maglev propeller system, a small spacecraft model suspending and moving around a terrestrial globe, several small maglev vehicle models and a magnetic circuit converter have been designed and constructed. The track was paved by NdFeB magnets, the arrangement of the magnets made us easy to get a uniform distribution of magnetic field along the length direction of the track and a high magnetic field gradient in the lateral direction. When the YBCO bulks mounted inside the vehicle models or spacecraft model was field cooled to LN2 temperature at a certain distance away from the track, they could be automatically floating over and moving along the track without any obvious friction. The models can be used as experimental or demonstration devices for the magnetic levitation applications.

  19. Photo-thermal processing of semiconductor fibers and thin films

    NASA Astrophysics Data System (ADS)

    Gupta, Nishant

    Furnace processing and rapid thermal processing (RTP) have been an integral part of several processing steps in semiconductor manufacturing. The performance of RTP techniques can be improved many times by exploiting quantum photo-effects of UV and vacuum ultraviolet (VUV) photons in thermal processing and this technique is known as rapid photo-thermal processing (RPP). As compared to furnace processing and RTP, RPP provides higher diffusion coefficient, lower stress and lower microscopic defects. In this work, a custom designed automated photo assisted processing system was built from individual parts and an incoherent light source. This photo-assisted processing system is used to anneal silica clad silicon fibers and deposit thin-films. To the best of our knowledge, incoherent light source based rapid photo-thermal processing (RPP) was used for the first time to anneal glass-clad silicon core optical fibers. X-ray diffraction examination, Raman spectroscopy and electrical measurements showed a considerable enhancement of structural and crystalline properties of RPP treated silicon fibers. Photons in UV and vacuum ultraviolet (VUV) regions play a very important role in improving the bulk and carrier transport properties of RPP-treated silicon optical fibers, and the resultant annealing permits a path forward to in situ enhancement of the structure and properties of these new crystalline core optical fibers. To explore further applications of RPP, thin-films of Calcium Copper Titanate (CaCu3Ti4O12) or CCTO and Copper (I) Oxide (Cu2O) were also deposited using photo-assisted metal-organic chemical vapor deposition (MOCVD) on Si/SiO2 and n-Si substrate respectively. CCTO is one of the most researched giant dielectric constant materials in recent years. The given photo-assisted MOCVD approach provided polycrystalline CCTO growth on a SiO2 surface with grain sizes as large as 410 nm. Copper (I) oxide (Cu2O) is a direct band gap semiconductor with p-type conductivity and

  20. Design of a cryogenic system for a 20m direct current superconducting MgB2 and YBCO power cable

    NASA Astrophysics Data System (ADS)

    Cheadle, Michael J.; Bromberg, Leslie; Jiang, Xiaohua; Glowacki, Bartek; Zeng, Rong; Minervini, Joseph; Brisson, John

    2014-01-01

    The Massachusetts Institute of Technology, the University of Cambridge in the United Kingdom, and Tsinghua University in Beijing, China, are collaborating to design, construct, and test a 20 m, direct current, superconducting MgB2 and YBCO power cable. The cable will be installed in the State Key Laboratory of Power Systems at Tsinghua University in Beijing beginning in 2013. In a previous paper [1], the cryogenic system was briefly discussed, focusing on the cryogenic issues for the superconducting cable. The current paper provides a detailed discussion of the design, construction, and assembly of the cryogenic system and its components. The two-stage system operates at nominally 80 K and 20 K with the primary cryogen being helium gas. The secondary cryogen, liquid nitrogen, is used to cool the warm stage of binary current leads. The helium gas provides cooling to both warm and cold stages of the rigid cryostat housing the MgB2 and YBCO conductors, as well as the terminations of the superconductors at the end of the current leads. A single cryofan drives the helium gas in both stages, which are thermally isolated with a high effectiveness recuperator. Refrigeration for the helium circuit is provided by a Sumitomo RDK415 cryocooler. This paper focuses on the design, construction, and assembly of the cryostat, the recuperator, and the current leads with associated superconducting cable terminations.

  1. Microstructure and trapped field of YBCO bulk single-grain superconductors prepared by interior seeding

    NASA Astrophysics Data System (ADS)

    Radusovska, M.; Diko, P.; Piovarci, S.; Park, S.-D.; Jun, B.-H.; Kim, C.-J.

    2017-10-01

    The microstructural analyses of YBCO bulk single-grain superconductors grown by interior seeding with taller and shorter upper pellets have shown that a suitable upper pellet height can lower the porosity in the upper part of the sample, produce a more appropriate distribution of pinning centres in the form of Y-211 particles and suppress subgrain formation with a higher crystal misalignment in the c-growth sector (c-GS), which can lead to a higher measured trapped magnetic field and a more uniform cone of the trapped-field profile. The observed bulging of the sample surface at the c-GS can be explained by the edge melt distribution model, which shows that macroscopic mass transport to the growth sector occurs with higher growth rates.

  2. Effect of superconducting spacer layer thickness on magneto-transport and magnetic properties of La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/YBa{sub 2}Cu{sub 3}O{sub 7}/La{sub 0.7}Sr{sub 0.3}MnO{sub 3} heterostructures

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sharma, Minaxi, E-mail: meenanith@gmail.com; Sharma, K. K., E-mail: kknitham@gmail.com; Pandey, Pankaj K.

    2014-01-07

    We have studied the magneto-transport and magnetic properties of LSMO/YBCO/LSMO trilayers on LaAlO{sub 3} (001) substrate, deposited using pulsed laser deposition technique. From x-ray diffraction measurements, it is confirmed that the grown trilayer films are single phase natured. The temperature dependent resistivity shows a metallic behavior below 350 K. At low temperature from resistivity fitted data, we observe that electron-electron, electron-phonon, and electron-magnon interactions are the main factors for scattering of carriers. The ferromagnetic LSMO layers suppress the critical temperature of YBCO spacer layer. We observe maximum magnetoresistance value ∼49% at 250 K for LSMO(200 nm)/YBCO(50 nm)/LSMO(200 nm) trilayer. Magnetization measurements reveal that at roommore » temperature the YBCO spacer layer is allowing the LSMO layers to interact antiferromagnetically.« less

  3. Composition dependences of crystal structure and electrical properties of epitaxial Pb(Zr,Ti)O3 films grown on Si and SrTiO3 substrates

    NASA Astrophysics Data System (ADS)

    Okamoto, Shoji; Okamoto, Satoshi; Yokoyama, Shintaro; Akiyama, Kensuke; Funakubo, Hiroshi

    2016-10-01

    {100}-oriented Pb(Zr x ,Ti1- x )O3 (PZT) thin films of approximately 2 µm thickness and Zr/(Zr + Ti) ratios of 0.39-0.65 were epitaxially grown on (100)cSrRuO3//(100)SrTiO3 (STO) and (100)cSrRuO3//(100)cLaNiO3//(100)CeO2//(100)YSZ//(100)Si (Si) substrates having different thermal expansion coefficients by pulsed metal-organic chemical vapor deposition (MOCVD). The effects of Zr/(Zr + Ti) ratio and type of substrate on the crystal structure and dielectric, ferroelectric and piezoelectric properties of the films were systematically investigated. The X-ray diffraction measurement showed that both films changed from having a tetragonal symmetry to rhombohedral symmetry through the coexisting region with increasing Zr/(Zr + Ti) ratio. This region showed the Zr/(Zr + Ti) ratios of 0.45-0.59 for the films on the STO substrates that were wider than the films on the Si substrates. Saturation polarization values were minimum at approximately Zr/(Zr + Ti) = 0.50 for the films on the STO substrates, and no obvious Zr/(Zr + Ti) ratio dependence was detected in the films on the Si substrates. On the other hand, the maximum field-induced strain values measured by scanning force microscopy at approximately Zr/(Zr + Ti) = 0.50 at 100 kV/cm were about 0.5 and 0.1% in the films on the Si and STO, respectively.

  4. High T(sub c) Superconducting Bolometer on Chemically Etched 7 Micrometer Thick Sapphire

    NASA Technical Reports Server (NTRS)

    Lakew, B.; Brasunas, J. C.; Pique, A.; Fettig, R.; Mott, B.; Babu, S.; Cushman, G. M.

    1997-01-01

    A transition-edge IR detector, using a YBa2Cu3O(7-x) (YBCO) thin film deposited on a chemically etched, 7 micrometer thick sapphire substrate has been built. To our knowledge it is the first such high T(sub c) superconducting (HTS) bolometer on chemically thinned sapphire. The peak optical detectivity obtained is l.2 x 10(exp 10) cmHz(sup 1/2)/W near 4Hz. Result shows that it is possible to obtain high detectivity with thin films on etched sapphire with no processing after the deposition of the YBCO film. We discuss the etching process and its potential for micro-machining sapphire and fabricating 2-dimensional detector arrays with suspended sapphire membranes. A 30 micrometer thick layer of gold black provided IR absorption. Comparison is made with the current state of the art on silicon substrates.

  5. Atomic-scale identification of novel planar defect phases in heteroepitaxial YBa2Cu3O7-δ thin films

    NASA Astrophysics Data System (ADS)

    Gauquelin, Nicolas; Zhang, Hao; Zhu, Guozhen; Wei, John Y. T.; Botton, Gianluigi A.

    2018-05-01

    We have discovered two novel types of planar defects that appear in heteroepitaxial YBa2Cu3O7-δ (YBCO123) thin films, grown by pulsed-laser deposition (PLD) either with or without a La2/3Ca1/3MnO3 (LCMO) overlayer, using the combination of high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging and electron energy loss spectroscopy (EELS) mapping for unambiguous identification. These planar lattice defects are based on the intergrowth of either a BaO plane between two CuO chains or multiple Y-O layers between two CuO2 planes, resulting in non-stoichiometric layer sequences that could directly impact the high-Tc superconductivity.

  6. Incorporation of zinc in MOCVD growth of Ga 0.5In 0.5P

    NASA Astrophysics Data System (ADS)

    Kurtz, Sarah R.; Olson, J. M.; Kibbler, A. E.; Bertness, K. A.

    1992-11-01

    Data are presented for the Zn doping of Ga 0.5In 0.5P, showing that the hole and zinc concentrations increase almost linearly with zinc flow, and also increase with the V/III ratio and with growth rate at a fixed V/III ratio. These observations are consistent with other reports that show the incorporation of zinc to increase with V/III ratio for both GaAs and Ga 0.5In 0.5P deposition by metalorganic chemical vapor deposition (MOCVD). The growth-rate dependence of the zinc incorporation in Ga 0.5In 0.5P has not previously been reported. A model based on varying group V coverage of the step where zinc is most strongly bound is presented and compared with the data. The model predicts that the zinc incorporation increases with increasing phosphorus overpressure, but should be independent of group III overpressure in the parameter space investigated here.

  7. Growth of biaxially textured template layers using ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Park, Seh-Jin

    A two-step IBAD (ion beam assisted deposition) method is investigated, and compared to the conventional IBAD methods. The two step method uses surface energy anisotropy to achieve uniaxial texture and ion beam irradiation for biaxial texture. The biaxial texture was achieved by selective surface etching and enhanced by grain overgrowth. In this method, biaxial texture alignment is performed on a (001) uniaxially textured buffer layer. The material selected for achieving uniaxial texture, YBCO (YBa2Cu3O7-x), has strong surface energy anisotropy. YBCO is chemically susceptible to the reaction with the adjacent layer. Yttria stabilized zirconia (YSZ) was used to prevent the reaction between YBCO and the substrates (polycrystalline Ni alloy [Hastelloy] and amorphous SiNx/Si). A SrTiO3 layer was deposited on the uniaxially textured YBCO layer to retard stoichiometry change with subsequent processing. STO is well lattice matched with YBCO. A top layer of Ni was then deposited. The Ni layer was used for studying the effect of grain overgrowth. The obtained uniaxial Ni films were used for subsequent ion beam processing. Ar ion beam irradiation onto the uniaxially textured Ni film was used to study the effect of selective grain etching in achieving in-plane aligned Ni grains. Additional Ni deposition induces the overgrowth of the in-plane aligned Ni grains and, finally, the overall in-plane alignment. The in-plane alignment is examined with XRD phi scan. The effect of surface polarity of insulating oxide substrates on the epitaxial growth behavior was investigated. The lattice strain energy was the most important factor for determining the orientation of Ni films on a non-polar surface. However, for a polar surface, the surface energy plays an important role in determining the final orientation of the Ni films based on the experimental and theoretical results. Y2O3 growth behavior was also studied. The lattice strain energy is the most important factor for Y2O3 growth on

  8. Comparison of characteristics of fluorine doped zinc and gallium tin oxide composite thin films deposited on stainless steel 316 bipolar plate by electron cyclotron resonance-metal organic chemical vapor deposition for proton exchange membrane fuel cells.

    PubMed

    Park, Jihun; Hudaya, Chairul; Lee, Joong Kee

    2011-09-01

    In order to replace the brittle graphite bipolar plates currently used for the PEMFC stack, coated SUS 316 was employed. As a metallic bipolar plate, coated SUS 316 can provide higher mechanical strength, better durability to shocks and vibration, less permeability, improved thermal and bulk electrical conductivity, as well as being thinner and lighter. To enhance the interfacial contact resistance and corrosion resistance of SUS 316, the deposition of GTO:F and ZTO:F composite films was carried out by ECR-MOCVD. The surface morphology of the films consisted of tiny elliptically shaped grains with a thickness of 1 microm. The corrosion current for GTO:F was 0.13 Acm(-2) which was much lower than that of bare SUS 316 (50.16 Acm(-2)). The GTO:F coated film had the smallest corrosion current due to the formation of a tight surface morphology with very few pin-holes. The GTO:F coated film exhibited the highest cell voltage and power density due to its lower ICR values.

  9. Crossover between superconductivity and magnetism in SrRuO3 mesocrystal embedded YBa2Cu3O7-x heterostructures.

    PubMed

    Suresh, Vandrangi; Lin, Jheng-Cyuan; Liu, Heng-Jui; Zhang, Zaoli; Chiang, Ping-Chih; Hsun, Yu-Ching; Chen, Yi-Chun; Lin, Jiunn-Yuan; Chu, Ying-Hao

    2016-11-03

    The competition between superconductivity and ferromagnetism poses great challenges and has attracted renewed interest for applications in novel spintronic devices. In order to emphasize their interactions, we fabricated a heterostructure composed of superconducting YBa 2 Cu 3 O 7-δ (YBCO) film embedded with itinerant ferromagnetic SrRuO 3 (SRO) mesocrystals. Starting from a doping concentration of 10 vol% of SRO mesocrystal in a YBCO matrix, corresponding to the density of SRO nanocrystals ∼5 × 10 9 cm -2 , which exhibits the typical characteristic of a metal-superconductor transition, and then increasing the magnetic interactions as a function of SRO embedment, the electronic correlation and the interplay between superconductivity and magnetism throughout the temperature regime were investigated. A metal-insulator transition in the normal state of YBCO and a crossover between superconductivity and magnetism at low temperatures were found upon increasing the density of nano-size SRO crystallites in the YBCO matrix as a consequence of competing interactions between these two ordered phases.

  10. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Analysis and finite element simulation of electromagnetic heating in the nitride MOCVD reactor

    NASA Astrophysics Data System (ADS)

    Li, Zhi-Ming; Hao, Yue; Zhang, Jin-Cheng; Xu, Sheng-Rui; Ni, Jin-Yu; Zhou, Xiao-Wei

    2009-11-01

    Electromagnetic field distribution in the vertical metal organic chemical vapour deposition (MOCVD) reactor is simulated by using the finite element method (FEM). The effects of alternating current frequency, intensity, coil turn number and the distance between the coil turns on the distribution of the Joule heat are analysed separately, and their relations to the value of Joule heat are also investigated. The temperature distribution on the susceptor is also obtained. It is observed that the results of the simulation are in good agreement with previous measurements.

  11. Improved epitaxial texture of thick YBa2Cu3O7-δ/GdBa2Cu3O7-δ films with periodic stress releasing

    NASA Astrophysics Data System (ADS)

    Lin, Jianxin; Yang, Wentao; Gu, Zhaohui; Shu, Gangqiang; Li, Minjuan; Sang, Lina; Guo, Yanqun; Liu, Zhiyong; Cai, Chuanbing

    2015-04-01

    Thick high-Tc superconducting films consisting of a YBa2Cu3O7-δ/GdBa2Cu3O7-δ periodic architecture are developed on oxid-buffered Hastelloy tapes using a pulsed laser deposition process. It is revealed that multilayer intermittent structures for superconducting layers are effective to avoid the presence of a-axis grains and microcracks that occur with increasing thickness, which are frequently observed in monolayer films of REBa2Cu3O7-δ (RE = Y, Gd, or other rare earths), such grains and cracks being the significant challenge for obtaining high critical current in coated conductors. Presently, the thicknesses of multilayer films vary from 0.5 μm to 3 μm and, based on the SEM images and x-ray φ-scans, hardly show the influences on the microstructures and grain orientation of the c-axis. Also, the characteristic Raman spectrum patterns and their shifting with increasing the thickness of YBCO/GdBCO imply that the superior texture is obtained due to the evolution of stress dominated by the compressive stress rather than tensile stress.

  12. High Temperature Superconducting Thick Films

    DOEpatents

    Arendt, Paul N.; Foltyn, Stephen R.; Groves, James R.; Holesinger, Terry G.; Jia, Quanxi

    2005-08-23

    An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4×106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.

  13. Optimization of Strontium Titanate (SrTiO3) Thin Films Fabricated by Metal Organic Chemical Vapor Deposition (MOCVD) for Microwave-Tunable Devices

    DTIC Science & Technology

    2015-12-01

    induced (non)stoichiometry on the structure, dielectric response, and thermal conductivity of SrTiO3 thin films. Chemistry of Materials. 2012;24:331...must be below a few percent. The external sources of loss, such as conductor interface losses and various losses that inevitably arise from device...epitaxy • Excellent control of film stoichiometry and thickness • Large area uniformity and potential for complex structure coating • Optimized

  14. Formation of ohmic contacts to MOCVD grown p-GaN by controlled activation of Mg

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kaminska, E.; Piotrowska, A.; Barcz, A.

    2000-11-27

    We report on the formation of low resistivity ohmic contacts to p-GaN, r{sub c} < 10{sup {minus}4}{Omega}cm{sup 2}, by increasing the concentration of the active Mg in the subcontact zone, via Zr-mediated release of hydrogen. We have investigated the process of evolution of hydrogen from MOCVD grown p-GaN via Zr-based metallization, and determined the optimum processing conditions (temperature and gas ambient) for fabrication of low resistance ohmic contacts. When the process is conducted in N{sub 2} flow, the metallization remains stable at temperatures required to achieve the ohmic behavior, and the morphology of the metal/semiconductor interface is unaltered by suchmore » a heat treatment. The processing in O{sub 2}, on the contrary, causes the interdiffusion of metallization constituents and the incorporation of oxygen into the semiconductor subcontact region, which could be responsible for increased resistivity of these contacts.« less

  15. A novel barium strontium titanate/nickel/titanium nitride/silicon structure for gigabit-scale DRAM capacitors

    NASA Astrophysics Data System (ADS)

    Ritums, Dwight Lenards

    A materials system has been developed for advanced oxide high permittivity capacitors for use in Dynamic Random Access Memory (DRAM) applications. A capacitor test structure has been fabricated, demonstrating the integration of this materials system onto Si. It is a 3-D stacked electrode structure which uses the high-K dielectric material Ba1- xSrxTiO 3 (BST) and a novel Ni/TiN bottom electrode system. The structure was grown using pulsed laser deposition (PLD), photo-assisted metal-organic chemical vapor deposition (PhA-MOCVD), and electron beam deposition, and resulted in thin film capacitors with dielectric constants over 500. Other advanced oxides, principally SrVO3, were also investigated for use as electrode materials. The fabricated test structure is 3 μgm wide and 1 μm thick. RIE was used to generate the 3-D structure, and an etch gas recipe was developed to pattern the 3-D electrode structure onto the TiN. The Ni was deposited by electron beam deposition, and the BST was grown by PLD and PhA-MOCVD. Conformal coating of the electrode by the BST was achieved. The film structure was analyzed with XRD, SEM, EDS, XPS, AES, and AFM, and the electronic properties of the devices were characterized. Permittivites of up to 500 were seen in the PLD-grown films, and values up to 700 were seen in the MOCVD- deposited films. The proof of concept of a high permittivity material directly integrated onto Si has been demonstrated for this capacitor materials system. With further lithographic developments, this system can be applied toward gigabit device fabrication.

  16. The homogeneity of levitation force in single domain YBCO bulk

    NASA Astrophysics Data System (ADS)

    Zhou, Keran; Xu, Ke-Xi; Wu, Xing-da; Pan, Peng-jun

    2007-11-01

    The pellet homogeneity of levitation force versus the position in comparison to the seed or to the top surface has been studied in the entire volume of a single domain YBa 2Cu 3O 7-δ bulk sample processed by the top-seeded melt texturing growth (TSMTG). It is found that the levitation forces increase and peak at a depth of 3 mm from the top of the sample at liquid nitrogen temperature. In other words, the second disk has the largest levitation force density. The phenomenon can be interpreted by the interaction between the microcracks or pores produced by crystal growth and the oxygenation. We propose a model in which Y211 particles distribution leading to microcracks and pores reduces the effective induced shielding current loops (ISCL) and increases the perimeters of ISCL. This corresponds to a decrease in the grain size and results in greatly reduced levitation forces of the bottom of the bulk. From the research, we know that the density of the YBCO bulk is also an important parameter for the levitation properties. The result is very attractive and useful for the fundamental studies and fabrication of TSMTG YBa 2Cu 3O 7-δ bulk.

  17. Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yang, T.P.; Zhu, H.C.; Bian, J.M.

    2008-12-01

    The heterojunction light-emitting diode with n-ZnO/p-GaN structure was grown on (0 0 0 1) sapphire substrate by metalorganic chemical vapor deposition (MOCVD) technique. The heterojunction structure was consisted of an Mg-doped p-type GaN layer with a hole concentration of {approx}10{sup 17} cm{sup -3} and a unintentionally doped n-type ZnO layer with an electron concentration of {approx}10{sup 18} cm{sup -3}. A distinct blue-violet electroluminescence with a dominant emission peak centered at {approx}415 nm was observed at room temperature from the heterojunction structure under forward bias conditions. The origins of the electroluminescence (EL) emissions are discussed in comparison with the photoluminescence spectra,more » and it was supposed to be attributed to a radiative recombination in both n-ZnO and p-GaN sides.« less

  18. Rapid and semi-analytical design and simulation of a toroidal magnet made with YBCO and MgB 2 superconductors

    DOE PAGES

    Dimitrov, I. K.; Zhang, X.; Solovyov, V. F.; ...

    2015-07-07

    Recent advances in second-generation (YBCO) high-temperature superconducting wire could potentially enable the design of super high performance energy storage devices that combine the high energy density of chemical storage with the high power of superconducting magnetic storage. However, the high aspect ratio and the considerable filament size of these wires require the concomitant development of dedicated optimization methods that account for the critical current density in type-II superconductors. In this study, we report on the novel application and results of a CPU-efficient semianalytical computer code based on the Radia 3-D magnetostatics software package. Our algorithm is used to simulate andmore » optimize the energy density of a superconducting magnetic energy storage device model, based on design constraints, such as overall size and number of coils. The rapid performance of the code is pivoted on analytical calculations of the magnetic field based on an efficient implementation of the Biot-Savart law for a large variety of 3-D “base” geometries in the Radia package. The significantly reduced CPU time and simple data input in conjunction with the consideration of realistic input variables, such as material-specific, temperature, and magnetic-field-dependent critical current densities, have enabled the Radia-based algorithm to outperform finite-element approaches in CPU time at the same accuracy levels. Comparative simulations of MgB 2 and YBCO-based devices are performed at 4.2 K, in order to ascertain the realistic efficiency of the design configurations.« less

  19. Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC

    NASA Astrophysics Data System (ADS)

    Feng, Liang; Ping, Chen; De-Gang, Zhao; De-Sheng, Jiang; Zhi-Juan, Zhao; Zong-Shun, Liu; Jian-Jun, Zhu; Jing, Yang; Wei, Liu; Xiao-Guang, He; Xiao-Jing, Li; Xiang, Li; Shuang-Tao, Liu; Hui, Yang; Li-Qun, Zhang; Jian-Ping, Liu; Yuan-Tao, Zhang; Guo-Tong, Du

    2016-05-01

    We have investigated the electron affinity of Si-doped AlN films (N Si = 1.0 × 1018-1.0 × 1019 cm-3) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition (MOCVD) under low pressure on the n-type (001)6H-SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy (UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 eV for the 400-nm-thick one. Accompanying the x-ray photoelectron spectroscopy (XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574135, 61574134, 61474142, 61474110, 61377020, 61376089, 61223005, and 61321063), the One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).

  20. What can Andreev bound states tell us about superconductors?

    PubMed

    Millo, Oded; Koren, Gad

    2018-08-06

    Zero-energy Andreev bound states, which manifest themselves in the tunnelling spectra as zero-bias conductance peaks (ZBCPs), are abundant at interfaces between superconductors and other materials and on the nodal surface of high-temperature superconductors. In this review, we focus on the information such excitations can provide on the properties of superconductor systems. First, a general introduction to the physics of Andreev bound states in superconductor/normal metal interfaces is given with a particular emphasis on why they appear at zero energy in d -wave superconductors. Then, specific spectroscopic tunnelling studies of thin films, bilayers and junctions are described, focusing on the corresponding ZBCP features. Scanning tunnelling spectroscopy (STS) studies show that the ZBCPs on the c -axis YBa 2 Cu 3 O 7- δ (YBCO) films are correlated with the surface morphology and appear only in proximity to (110) facets. STS on c -axis La 1.88 Sr 0.12 CuO 4 (LSCO) films exhibiting the 1/8 anomaly shows spatially modulated peaks near zero bias associated with the anti-phase ordering of the d -wave order parameter predicted at this doping level. ZBCPs were also found in micrometre-size edge junctions of YBCO/SrRuO 3 /YBCO, where SrRuO 3 is ferromagnetic. Here, the results are consistent with a crossed Andreev reflection effect (CARE) at the narrow domain walls of the SrRuO 3 ZBCPs measured in STS studies of manganite/cuprate bilayers could not be attributed to CARE because the manganite's domain wall is much larger than the coherence length in YBCO, and instead are attributed to proximity-induced triplet-pairing superconductivity with non-conventional symmetry. And finally, ZBCPs found in junctions of non-intentionally doped topological insulator films of Bi 2 Se 3 and the s -wave superconductor NbN are attributed to proximity-induced p x  + ip y triplet order parameter in the topological material.This article is part of the theme issue 'Andreev bound states'.

  1. Fabrication and investigation of three-dimensional ferroelectric capacitors for the application of FeRAM

    NASA Astrophysics Data System (ADS)

    Yeh, Chia-Pin; Lisker, Marco; Kalkofen, Bodo; Burte, Edmund P.

    2016-03-01

    Ferroelectric capacitors made by lead zirconate titanate (PZT) thin films and iridium electrodes are fabricated on three-dimensional structures and their properties are investigated. The iridium films are grown by Plasma Enhanced MOCVD at 300°C, while the PZT films are deposited by thermal MOCVD at different process temperatures between 450°C and 550°C. The step coverage and composition uniformity of the PZT films on trench holes and lines are investigated. Phase separation of PZT films has been observed on both 3D and planar structures. No clear dependences of the crystallization and composition of PZT on 3D structure topography have been found. STEM EDX line scans show a uniform Zr/(Zr+Ti) concentration ratio along the 3D profile but the variation of the Pb/(Zr+Ti) concentration ratio is large because of the phase separation. 3D ferroelectric capacitors show good ferroelectric properties but have much higher leakage currents than 2D ferroelectric capacitors. Nevertheless, during cycling tests the degradation of the remnant polarization between 2D and 3D capacitors is similar after 109 switching cycles. In addition, the sidewalls and bottoms of the 3D structures seem to have comparable remnant polarizations with the horizontal top surfaces.

  2. The influence of doping element on structural and luminescent characteristics of ZnS thin films

    NASA Astrophysics Data System (ADS)

    Kryshtab, T.; Khomchenko, V. S.; Andraca-Adame, J. A.; Rodionov, V. E.; Khachatryan, V. B.; Tzyrkunov, Yu. A.

    2006-10-01

    For the fabrication of green and blue emitting ZnS structures the elements of I, III, and VII groups (Cu, Al, Ga, Cl) are used as dopants. The influence of type of impurity, doping technique, and type of substrate on crystalline structure and surface morphology together with luminescent properties was investigated. The doping of thin films was realized during the growth process and/or post-deposition thermal treatment. ZnS thin films were deposited by physical (EBE) and chemical (MOCVD) methods onto glass or ceramic (BaTiO 3) substrates. Closed spaced evaporation and thermodiffusion methods were used for the post-deposition doping of ZnS films. X-ray diffraction (XRD) techniques, atomic force microscopy (AFM), and measurements of photoluminescent (PL) spectra were used for the investigations. It was shown that the doping by the elements of I (Cu) and III (Al, Ga) groups does not change the crystal structure during the thermal treatment up to 1000 ∘C, whereas simultaneous use of the elements of I (Cu) and VII (Cl) groups leads to decrease of the phase transition temperature to 800 ∘C. The presence of impurities in the growth process leads to a grain size increase. At post-deposition treatment Ga and Cl act as activators of recrystallization process. The transition of ZnS sphalerite lattice to wurtzite one leads to the displacement of the blue emission band position towards the short-wavelength range by 10 nm.

  3. Broadening of resistive transition and irreversibility line for epitaxial YBa2Cu3O7-δ thin film

    NASA Astrophysics Data System (ADS)

    Xiao-jun, Xu; Ke-bin, Li; Jun, Fang; Zhi-he, Wang; Xiao-wen, Cao

    1996-04-01

    The broadening of resistive transition of c axis oriented epitaxial YBCO thin film has been measured for three configurations: (1) Hparc and H ⊥ I; (2) Hparab plane and H ⊥ I; (3) Hparab plane and HparI in magnetic field up to 8 Tesla(T), and for different angle θ of magnetic field relative to the ab plane with H = 4T. The results obtained indicate that the broadening of resistive transition is mainly determined by the angle θ, but is hardly related to the angle α made between magnetic field and tran sport current in ab plane. This means that the broadening of resistive transition is not determined by flux motion drived by apparent Lorentz force. An expression of angular dependence of irreversibility line has been given.

  4. Correlations between critical current density, j(sub c), critical temperature, T(sub c),and structural quality of Y1B2Cu3O(7-x) thin superconducting films

    NASA Technical Reports Server (NTRS)

    Chrzanowski, J.; Xing, W. B.; Atlan, D.; Irwin, J. C.; Heinrich, B.; Cragg, R. A.; Zhou, H.; Angus, V.; Habib, F.; Fife, A. A.

    1995-01-01

    Correlations between critical current density (j(sub c)) critical temperature (T(sub c)) and the density of edge dislocations and nonuniform strain have been observed in YBCO thin films deposited by pulsed laser ablation on (001) LaAlO3 single crystals. Distinct maxima in j(sub c) as a function of the linewidths of the (00 l) Bragg reflections and as a function of the mosaic spread have been found in the epitaxial films. These maxima in j(sub c) indicate that the magnetic flux lines, in films of structural quality approachingthat of single crystals, are insufficiently pinned which results in a decreased critical current density. T(sub c) increased monotonically with improving crystalline quality and approached a value characteristic of a pure single crystal. A strong correlation between j(sub c) and the density of edge dislocations ND was found. At the maximum of the critical current density the density of edge dislocations was estimated to be N(sub D) approximately 1-2 x 10(exp 9)/sq cm.

  5. AC Loss Measurements on a 2G YBCO Coil

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Rey, Christopher M; Duckworth, Robert C; Schwenterly, S W

    2011-01-01

    The Oak Ridge National Laboratory (ORNL) is collaborating with Waukesha Electric Systems (WES) to continue development of HTS power transformers. For compatibility with the existing power grid, a commercially viable HTS transformer will have to operate at high voltages in the range of 138 kV and above, and will have to withstand 550-kV impulse voltages as well. Second-generation (2G) YBCO coated conductors will be required for an economically-competitive design. In order to adequately size the refrigeration system for these transformers, the ac loss of these HTS coils must be characterized. Electrical AC loss measurements were conducted on a prototype highmore » voltage (HV) coil with co-wound stainless steel at 60 Hz in a liquid nitrogen bath using a lock-in amplifier technique. The prototype HV coil consisted of 26 continuous (without splice) single pancake coils concentrically centered on a stainless steel former. For ac loss measurement purposes, voltage tap pairs were soldered across each set of two single pancake coils so that a total of 13 separate voltage measurements could be made across the entire length of the coil. AC loss measurements were taken as a function of ac excitation current. Results show that the loss is primarily concentrated at the ends of the coil where the operating fraction of critical current is the highest and show a distinct difference in current scaling of the losses between low current and high current regimes.« less

  6. Solderability study of RABiTS-based YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Zhang, Yifei; Duckworth, Robert C.; Ha, Tam T.; Gouge, Michael J.

    2011-08-01

    The solderability of commercially available YBa2Cu3O7-x (YBCO) coated conductors that were made from Rolling Assisted Biaxially Textured Substrates (RABiTS)-based templates was studied. The coated conductors, also known as second-generation (2G) high temperature superconductor (HTS) wires (in the geometry of flat tapes about 4 mm wide), were laminated with copper, brass, or stainless steel strips as stabilizers. To understand the factors that influence their solderability, surface profilometry and scanning electron microscopy were used to characterize the wire surfaces. The solderability of three solders, 52In48Sn, 67Bi33In, and 100In (wt.%), was evaluated using a standard test (IPC/ECA J-STD-002) and with two different commercial fluxes. It was found that the solderability varied with the solder and flux but the three different wires showed similar solderability for a fixed combination of solder and flux. Solder joints of the 2G wires were fabricated using the tools and the procedures recommended by the HTS wire manufacturer. The solder joints were made in a lap-joint geometry and with the superconducting sides of the two wires face-to-face. The electrical resistances of the solder joints were measured at 77 K, and the results were analyzed to qualify the soldering materials and evaluate the soldering process. It was concluded that although the selection of soldering materials affected the resistance of a solder joint, the resistivity of the stabilizer was the dominant factor.

  7. Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN

    NASA Astrophysics Data System (ADS)

    Lund, Cory; Catalano, Massimo; Wang, Luhua; Wurm, Christian; Mates, Thomas; Kim, Moon; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

    2018-02-01

    N-polar InN layers were deposited using MOCVD on GaN-on-sapphire templates which were miscut 4° towards the GaN m-direction. For thin layers, quantum dot-like features were spontaneously formed to relieve the strain between the InN and GaN layers. As the thickness was increased, the dots elongated along the step direction before growing outward perpendicular to the step direction and coalescing to form a complete InN layer. XRD reciprocal space maps indicated that the InN films relaxed upon quantum dot formation after nominally 1 nm thick growth, resulting in 5-7 nm tall dots with diameters around 20-50 nm. For thicker layers above 10 nm, high electron mobilities of up to 706 cm2/V s were measured using Hall effect measurements indicating high quality layers.

  8. Microwave absorption studies of high T sub c superconductors and related materials 8; ESR of DPPH coated on BiSrCaCuO films fabricated on MgO (100) substrates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sugawara, K.; Tanaka, S.

    1992-06-20

    This paper reports that ESR of DPPH coated on Bi-Sr-Ca-Cu-O films fabricated on MgO (100) substrates by MOCVD have been studied for samples with different thicknesses, 1000 {Angstrom} and 100 {Angstrom}. Temperature dependence of the ESR peak-to-peak linewidth, {Delta}H{sub pp}, revealed that {Delta}H{sub pp} increases with film thickness. The Excess ESR linewidth, {delta}({Delta}H{sub pp}) was also analyzed in terms of (1 {minus} t{sup alpha}, with t = T/T{sub c}, giving for example {alpha} = 4 ={minus}1 for the 1000 {Angstrom} thick sample. The ESR lineshapes were distorted by rotating the samples in applied magnetic fields. Severe distortion was found formore » the 1000 {Angstrom} sample below about 30 K, but the distortion almost disappears at temperatures above 30 K. The applied magnetic field effects were also examined in both field-cooled and zero-field-cooled cases.« less

  9. Over 15 MA/cm2 of critical current density in 4.8 µm thick, Zr-doped (Gd,Y)Ba2Cu3Ox superconductor at 30 K, 3T.

    PubMed

    Majkic, Goran; Pratap, Rudra; Xu, Aixia; Galstyan, Eduard; Selvamanickam, Venkat

    2018-05-03

    An Advanced MOCVD (A-MOCVD) reactor was used to deposit 4.8 µm thick (Gd,Y)BaCuO tapes with 15 mol% Zr addition in a single pass. A record-high critical current density (J c ) of 15.11 MA/cm 2 has been measured over a bridge at 30 K, 3T, corresponding to an equivalent (I c ) value of 8705 A/12 mm width. This corresponds to a lift factor in critical current of ~11 which is the highest ever reported to the best of author's knowledge. The measured critical current densities at 3T (B||c) and 30, 40 and 50 K, respectively, are 15.11, 9.70 and 6.26 MA/cm 2 , corresponding to equivalent Ic values of 8705, 5586 and 3606 A/12 mm and engineering current densities (J e ) of 7068, 4535 and 2928 A/mm 2 . The engineering current density (J e ) at 40 K, 3T is 7 times higher than that of the commercial HTS tapes available with 7.5 mol% Zr addition. Such record-high performance in thick films (>1 µm) is a clear demonstration that growing thick REBCO films with high critical current density (J c ) is possible, contrary to the usual findings of strong J c degradation with film thickness. This achievement was possible due to a combination of strong temperature control and uniform laminar flow achieved in the A-MOCVD system, coupled with optimization of BaZrO 3 nanorod growth parameters.

  10. Size effects and realiability of barium strontium titanate thin films

    NASA Astrophysics Data System (ADS)

    Parker, Charles Bernard

    Thin films of (Ba,Sr)TiO3 (BST) deposited by Liquid Source MOCVD were investigated. BST is a candidate dielectric for future-generation DRAM and as a tunable dielectric. Two areas of both scientific and commercial interest were investigated. The first area is the effect of decreasing dimension on ferroelectric properties. Several theories of size effects in ferroelectrics were evaluated. The dielectric response of a set of BST films of thicknesses from 15 to 580 nm was measured from 85 to 580 K. These films were extensively characterized and the boundary conditions that often influence size effects measurements were considered, including strain, finite screening length in the electrode, depolarization fields in the ferroelectric, atmospheric effects, control of stochiometry, and others. The data set was compared to the theoretical predictions and it was determined that Finite Size Scaling provided the best fit to the data. Using this theory, the predicted dielectric response was compared to the requirements of future generations of DRAM and was found to be sufficient, if film strain can be controlled. The second area is reliability. The types of lifetime-limiting electrical failure observed in BST are resistance degradation, time dependant dielectric breakdown (tddb), and noisy breakdown. Previous work on BST reliability has largely focused on resistance degradation at high temperature. This condition is only a small subset of experimental space. This work extends the understanding of BST failure into the low temperature regime and evaluates the effects of both DC and AC stress. It was found that tddb is the dominant failure mode at low temperature and resistance degradation is the dominant failure modes at high temperature. Synthesizing this work with previous work on resistance degradation allowed a failure framework to be developed. Rigorous extrapolation of resistance degradation and tddb lifetimes was compared to the requirements of future generations of DRAM

  11. Direct observation of vortex structure in a high-{Tc} YBa{sub 2}Cu{sub 3}O{sub 7{minus}y} thin film by Bitter decoration method

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sugimoto, Akira; Yamaguchi, Tetsuji; Iguchi, Ienari

    1999-12-01

    The Bitter decoration technique is one of the most powerful techniques to study the vortex structure of superconductor. The authors report the observation of vortex structure in a high {Tc} YBa{sub 2}Cu{sub 3}O{sub 7{minus}y} (YBCO) thin film by Bitter decoration method. The image of vortex structure was monitored by SEM, AFM and high resolution optical microscope. For magnetic field about 4--6mT, a vortex structure is seen. The vortex image varied with changing magnetic field. As compared with the vortex image of a Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+y} single crystal, the observed image appeared to be more randomly distributed.

  12. Fabrication of sensitive high Tc bolometers

    NASA Technical Reports Server (NTRS)

    Nahum, Michael; Verghese, S.; Hu, Qing; Richards, Paul L.; Char, K.; Newman, N.; Sachtjen, Scott A.

    1990-01-01

    The rapid change of resistance with temperature of high quality films of high T sub c superconductors can be used to make resistance thermometers with very low temperature noise. Measurements on c-axis yttrium barium copper oxide (YBCO) films have given a spectral intensity of temperature noise less than 4 times 10(exp -8) K/Hz(exp 1/2) at 10 Hz. Consequently, the opportunity exists to make useful bolometric infrared detectors that operate near 90 K which can be cooled with liquid nitrogen. The fabrication and measurement of two bolometer architectures are discussed. The first is a conventional bolometer which consists of a 3000 A thick YBCO film deposited in situ by laser ablation on top of a 500 A thick SrTiO3 thickness and diced into 1x1 mm(exp 2) bolometer chips. Gold black smoke was used as the radiation absorber. The voltage noise was less than the amplifier noise when the film was current biased. Optical measurements gave an NEP of 5 times 10(exp -11) W/Hz(exp 1/2) at 10 Hz. The second architecture is that of an antenna-coupled microbolometer which consists of a small (5x10 cubic microns) YBCO film deposited directly on a bulk substrate with a low thermal conductance (YSZ) and an impedance matched planar lithographed spiral or log-periodic antenna. This structure is produced by standard photolithographic techniques. Measurements gave an electrical NEP of 4.7 times 10(exp -12) W/Hz(exp 1/2) at 10 kHz. Measurements of the optical efficiency are in progress. The measured performance of both bolometers will be compared to other detectors operating at or above liquid nitrogen temperatures so as to identify potential applications.

  13. Hysteretic Vortex-Matching Effects in High-Tc Superconductors with Nanoscale Periodic Pinning Landscapes Fabricated by He Ion-Beam Projection

    NASA Astrophysics Data System (ADS)

    Zechner, G.; Jausner, F.; Haag, L. T.; Lang, W.; Dosmailov, M.; Bodea, M. A.; Pedarnig, J. D.

    2017-07-01

    Square arrays of submicrometer columnar defects in thin YBa2 Cu3 O7 -δ (YBCO) films with spacings down to 300 nm are fabricated by a He ion-beam projection technique. Pronounced peaks in the critical current and corresponding minima in the resistance demonstrate the commensurate arrangement of flux quanta with the artificial pinning landscape, despite the strong intrinsic pinning in epitaxial YBCO films. While these vortex-matching signatures are exactly at the predicted values in field-cooled experiments, they are displaced in zero-field-cooled, magnetic-field-ramped experiments, conserving the equidistance of the matching peaks and minima. These observations reveal an unconventional critical state in a cuprate superconductor with an artificial, periodic pinning array. The long-term stability of such out-of-equilibrium vortex arrangements paves the way for electronic applications employing fluxons.

  14. Solderability Study of RABiTS-Based YBCO Coated Conductors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhang, Yifei; Duckworth, Robert C; Ha, Tam T

    2011-01-01

    The solderability of commercially available YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) coated conductors that were made from Rolling Assisted Biaxially Textured Substrates (RABiTS)-based templates was studied. The coated conductors, also known as second-generation (2G) high temperature superconductor (HTS) wires (in the geometry of flat tapes about 4 mm wide), were laminated with copper, brass, or stainless steel strips as stabilizers. To understand the factors that influence their solderability, surface profilometry and scanning electron microscopy were used to characterize the wire surfaces. The solderability of three solders, 52In48Sn, 67Bi33In, and 100In (wt.%), was evaluated using a standard test (IPC/ECA J-STD-002) and withmore » two different commercial fluxes. It was found that the solderability varied with the solder and flux but the three different wires showed similar solderability for a fixed combination of solder and flux. Solder joints of the 2G wires were fabricated using the tools and the procedures recommended by the HTS wire manufacturer. The solder joints were made in a lap-joint geometry and with the superconducting sides of the two wires face-to-face. The electrical resistances of the solder joints were measured at 77 K, and the results were analyzed to qualify the soldering materials and evaluate the soldering process. It was concluded that although the selection of soldering materials affected the resistance of a solder joint, the resistivity of the stabilizer was the dominant factor.« less

  15. Correlations between critical current density, j{sub c}, critical temperature, T{sub c}, and structural quality of Y{sub 1}B{sub 2}Cu{sub 3}O{sub 7-x} thin superconducting films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chrzanowski, J.; Xing, W.B.; Atlan, D.

    1994-12-31

    Correlations between critical current density (j{sub c}) critical temperature (T{sub c}) and the density of edge dislocations and nonuniform strain have been observed in YBCO thin films deposited by pulsed laser ablation on (001) LaAlO{sub 3} single crystals. Distinct maxima in j{sub c} as a function of the linewidths of the (00{ell}) Bragg reflections and as a function of the mosaic spread have been found in the epitaxial films. These maxima in j{sub c} indicate that the magnetic flux lines, in films of structural quality approaching that of single crystals, are insufficiently pinned which results in a decreased critical currentmore » density. T{sub c} increased monotonically with improving crystalline quality and approached a value characteristic of a pure single crystal. A strong correlation between j{sub c} and the density of edge dislocations N{sub D} was found. At the maximum of the critical current density the density of edge dislocations was estimated to be N{sub D}{approximately}1-2 x 10{sup 9}/cm{sup 2}.« less

  16. Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics

    DOE PAGES

    Ritenour, Andrew J.; Boucher, Jason W.; DeLancey, Robert; ...

    2014-09-01

    The high balance-of-system costs of photovoltaic (PV) installations indicate that reductions in cell $/W costs alone are likely insufficient for PV electricity to reach grid parity unless energy conversion efficiency is also increased. Technologies which yield both high-efficiency cells (>25%) and maintain low costs are needed. GaAs and related III-V semiconductors are used in the highest-efficiency single- and multi-junction photovoltaics, but the technology is too expensive for non-concentrated terrestrial applications. This is due in part to the difficulty of scaling the metal-organic chemical vapor deposition (MOCVD) process, which relies on expensive reactors and employs toxic and pyrophoric gas-phase precursors suchmore » as arsine and trimethyl gallium, respectively. In this study, we describe GaAs films made by an alternative close-spaced vapor transport (CSVT) technique which is carried out at atmospheric pressure and requires only bulk GaAs, water vapor, and a temperature gradient in order to deposit crystalline films with similar electronic properties to that of GaAs deposited by MOCVD. CSVT is similar to the vapor transport process used to deposit CdTe thin films and is thus a potentially scalable low-cost route to GaAs thin films.« less

  17. ZnO for solar cell and thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Zhou, Chuanle; Ghods, Amirhossein; Yunghans, Kelcy L.; Saravade, Vishal G.; Patel, Paresh V.; Jiang, Xiaodong; Kucukgok, Bahadir; Lu, Na; Ferguson, Ian

    2017-03-01

    ZnO-based materials show promise in energy harvesting applications, such as piezoelectric, photovoltaic and thermoelectric. In this work, ZnO-based vertical Schottky barrier solar cells were fabricated by MOCVD de- position of ZnO thin films on ITO back ohmic contact, while Ag served as the top Schottky contact. Various rapid thermal annealing conditions were studied to modify the carrier density and crystal quality. Greater than 200 nm thick ZnO films formed polycrystalline crystal structure, and were used to demonstrate Schottky solar cells. I-V characterizations of the devices showed photovoltaic performance, but but need further development. This is the first demonstration of vertical Schottky barrier solar cell based on wide bandgap ZnO film. Thin film and bulk ZnO grown by MOCVD or melt growth were also investigated in regards to their room- temperature thermoelectric properties. The Seebeck coefficient of bulk ZnO was found to be much larger than that of thin film ZnO at room temperature due to the higher crystal quality in bulk materials. The Seebeck coefficients decrease while the carrier concentration increases due to the crystal defects caused by the charge carriers. The co-doped bulk Zn0:96Ga0:02Al0:02O showed enhanced power factors, lower thermal conductivities and promising ZT values in the whole temperature range (300-1300 K).

  18. In-plane orientation and composition dependences of crystal structure and electrical properties of {100}-oriented Pb(Zr,Ti)O3 films grown on (100) Si substrates by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Okamoto, Shoji; Sankara Rama Krishnan, P. S.; Okamoto, Satoshi; Yokoyama, Shintaro; Akiyama, Kensuke; Funakubo, Hiroshi

    2017-10-01

    In-plane orientation-controlled Pb(Zr x ,Ti1- x )O3 (PZT) films with a thickness of approximately 2 µm and a Zr/(Zr + Ti) ratio of 0.39-0.65 were grown on (100) Si substrates by pulsed metal-organic chemical vapor deposition (MOCVD). In-plane-oriented epitaxial PZT films and in-plane random fiber-textured PZT films with {100} out-of-plane orientation were grown on (100)c SrRuO3//(100)c LaNiO3//(100) CeO2//(100) YSZ//(100) Si and (100)c SrRuO3/(100)c LaNiO3/(111) Pt/TiO2/SiO2/(100) Si substrates, respectively. The effects of Zr/(Zr + Ti) ratio and in-plane orientation on the crystal structure, dielectric, ferroelectric, and piezoelectric properties of the films were systematically investigated. The X-ray diffraction measurement showed that the epitaxial PZT films had a higher volume fraction of (100) orientation than the fiber-textured PZT films in the tetragonal Zr/(Zr + Ti) ratio region. A large difference was not detected between the epitaxial films and the fiber-textured films for Zr/(Zr + Ti) ratio dependence of the dielectric constant, and remanent polarization. However, in the rhombohedral phase region [Zr/(Zr + Ti) = 0.65], coercive field was found to be 1.5-fold different between the epitaxial and fiber-textured PZT films. The maximum field-induced strains measured at 0-100 kV/cm by scanning atomic force microscopy were obtained at approximately Zr/(Zr + Ti) = 0.50 and were about 0.5 and 0.3% for the epitaxial and fiber-textured PZT films, respectively.

  19. Superconducting antennas for telecommunication applications based on dual mode cross slotted patches

    NASA Astrophysics Data System (ADS)

    Cassinese, A.; Barra, M.; Fragalà, I.; Kusunoki, M.; Malandrino, G.; Nakagawa, T.; Perdicaro, L. M. S.; Sato, K.; Ohshima, S.; Vaglio, R.

    2002-08-01

    Dual mode devices based on high temperature superconducting films represent an interesting class for telecommunication applications since they combine a miniaturized size with a good power handling. Here we report on a novel compact antenna obtained by crossing a square patch with two or more slots. The proposed design has an antenna size reduction of about 40% as compared to the conventional square patch microstrip antennas. Single patch antenna both with linear (LP) and circular (CP) polarization operating in the X-band have been designed and tested at prototype level. They are realized by using double sided (YBa 2Cu 3O 7- x) YBCO and Tl 2Ba 2Ca 1Cu 2O 8 (Tl-2212) superconducting films grown on MgO substrates and tested with a portable cryocooler. They showed at T=77 K a return loss <25 dB and a power handling of 23 dBm. Exemplary 16 elements arrays LP antennas operating in the X band have been also realized by using YBCO film grown on 2 ″ diameter MgO substrate.

  20. Studies on the effect of ammonia flow rate induced defects in gallium nitride grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Suresh, S.; Lourdudoss, S.; Landgren, G.; Baskar, K.

    2010-10-01

    Gallium nitride (GaN) epitaxial layers were grown with different V/III ratios by varying the ammonia (NH 3) flow rate, keeping the flow rate of the other precursor, trimethylgallium (TMG), constant, in an MOCVD system. X-ray rocking curve widths of a (1 0 2) reflection increase with an increase in V/III ratio while the (0 0 2) rocking curve widths decrease. The dislocation density was found to increase with an increase in ammonia flow rate, as determined by hot-wet chemical etching and atomic force microscopy. 77 K photoluminescence studies show near band emission at 3.49 eV and yellow luminescence peaking at 2.2 eV. The yellow luminescence (YL) intensity decreases with an increase in V/III ratio. Positron annihilation spectroscopy studies show that the concentration of Ga-like vacancies increases with an increase in ammonia flow rate. This study confirms that the yellow luminescence in the GaN arises due to deep levels formed by gallium vacancies decorated with oxygen atoms.

  1. Growth of a New Ternary BON Crystal on Si(100) by Plasma-Assisted MOCVD and Study on the Effects of Fed Gas and Growth Temperature

    NASA Astrophysics Data System (ADS)

    Chen, G. C.; Lee, S.-B.; Boo, J.-H.

    A new ternary BOxNy crystal was grown on Si(100) substrate at 500°C by low-frequency (100 kHz) radio-frequency (rf) derived plasma-assisted MOCVD with an organoborate precursor. The as-grown deposits were characterized by SEM, TED, XPS, XRD, AFM and FT-IR. The experimental results showed that BOxNy crystal was apt to be formed at N-rich atmosphere and high temperature. The decrease of hydrogen flux in fed gases was of benefit to form BON crystal structure. The crystal structure of BOxNy was as similar to that of H3BO3 in this study.

  2. Doubling of the Critical Current Density of 2G-YBCO Coated Conductors through proton irradiation

    NASA Astrophysics Data System (ADS)

    Welp, Ulrich; Jia, Ying; Kwok, Wai-Kwong; Rupich, Marty; Fleshler, Steven; Kayani, Asfghar

    2013-03-01

    We report on magnetization and transport measurements of the critical current density of commercial 2G YBCO coated conductors before and after proton irradiation. The samples were irradiated along the c-axis with 4 MeV protons to a fluence of 1.5x1016 p/cm2. We find that at temperatures below 50 K, proton irradiation increases Jc by a factor of 2 in low fields and increases up to 2.5 in fields of 7 T. At 77 K, proton irradiation is less effective in enhancing the critical current. Doubling of Jc in fields of several Tesla and at temperatures below 50 K will be highly beneficial for applications of coated conductors in rotating machinery, generators and magnet coils. - Work supported by the US DoE-BES funded Energy Frontier Research Center (YJ), and by Department of Energy, Office of Science, Office of Basic Energy Sciences (UW, WKK), under Contract No. DE-AC02-06CH11357.

  3. Trimming the electrical properties on nanoscale YBa2Cu3O7-x constrictions by focus ion beam technique

    NASA Astrophysics Data System (ADS)

    Lam, Simon K. H.; Bendavid, Avi; Du, Jia

    2017-09-01

    High temperature superconducting (HTS) nanostructure has a great potential in photon sensing at high frequency due to its fast recovery time. For maximising the coupling efficiency, the normal resistance of the nanostructure needs to be better matched to that of the thin-film antenna, which is typically few tens of ohm. We report on the fabrication of nanoscale high temperature superconducting YBa2Cu3O7-x (YBCO) constrictions using Gallium ion focus ion beam (FIB) technique. The FIB has been used to both remove the YBCO in lateral dimension and also tune its critical current and normal resistance by a combination of surface etching and implantation on the YBCO top layer. High critical current density of 2.5 MA/cm2 at 77 K can be obtained on YBCO nanobridges down to 100 nm in width. Subsequent trimming of the naobridges can lead to a normal resistance value over 50 Ω. Simulation of the Ga ion trajectory has also been performed to compare the measurement results. This method provides a simple step of fabricating nanoscale superconducting detectors such as hot electron bolometer.

  4. Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling

    NASA Astrophysics Data System (ADS)

    Li, Kuang-Hui; Alotaibi, Hamad S.; Sun, Haiding; Lin, Ronghui; Guo, Wenzhe; Torres-Castanedo, Carlos G.; Liu, Kaikai; Valdes-Galán, Sergio; Li, Xiaohang

    2018-04-01

    In a conventional induction-heating III-nitride metalorganic chemical vapor deposition (MOCVD) reactor, the induction coil is outside the chamber. Therefore, the magnetic field does not couple with the susceptor well, leading to compromised heating efficiency and harmful coupling with the gas inlet and thus possible overheating. Hence, the gas inlet has to be at a minimum distance away from the susceptor. Because of the elongated flow path, premature reactions can be more severe, particularly between Al- and B-containing precursors and NH3. Here, we propose a structure that can significantly improve the heating efficiency and allow the gas inlet to be closer to the susceptor. Specifically, the induction coil is designed to surround the vertical cylinder of a T-shaped susceptor comprising the cylinder and a top horizontal plate holding the wafer substrate within the reactor. Therefore, the cylinder coupled most magnetic field to serve as the thermal source for the plate. Furthermore, the plate can block and thus significantly reduce the uncoupled magnetic field above the susceptor, thereby allowing the gas inlet to be closer. The results show approximately 140% and 2.6 times increase in the heating and susceptor coupling efficiencies, respectively, as well as a 90% reduction in the harmful magnetic flux on the gas inlet.

  5. EFFECTS OF Au ON THE GROWTH OF ZnO NANOSTRUCTURES ON Si BY MOCVD

    NASA Astrophysics Data System (ADS)

    Cong, Chen; Fan, Lu Yang; Ping, He Hai; Wei, Wu Ke; Zhen, Ye Zhi

    2013-06-01

    The effects of Au on the growth of ZnO nanostructures on Si by metal organic chemical vapor deposition (MOCVD) at a relatively low temperature (450°C) were investigated. The experimental results showed that Au nanoparticles played a critical role during the growth of the ZnO nanostructures and affected their morphology and optical properties. It was found that Au nanoparticles particularly affected the nucleation of ZnO nanostructures during the growth process and the Au-assisted growth mechanism of ZnO nanostructures should be ascribed to the vapor-solid (VS) mechanism. The formation of a nanoneedle may be attributed to a more reactive interface between Au and ZnO, which leads to more zinc gaseous species absorbed near the interface. Different nucleation sites on ZnO nuclei resulted in the disorder of ZnO nanoneedles. Moreover, the crystalline quality of nano-ZnO was improved due to the presence of Au, according to the smaller full width at half maximum (FWHM) of the low-temperature exciton emission. We confirmed that ZnO nanoneedles showed better crystalline quality than ZnO nanorods through the HRTEM images and the SAED patterns. The reason for the improvement of the crystalline quality of nano-ZnO may be due to the less lattice mismatch.

  6. Voltage-ampere characteristics of YBCO coated conductor under inhomogeneous oscillating magnetic field

    NASA Astrophysics Data System (ADS)

    Geng, J.; Shen, B.; Li, C.; Zhang, H.; Matsuda, K.; Li, J.; Zhang, X.; Coombs, T. A.

    2016-06-01

    Direct current carrying type II superconductors present a dynamic resistance when subjected to an oscillating magnetic field perpendicular to the current direction. If a superconductor is under a homogeneous field with high magnitude, the dynamic resistance value is nearly independent of transport current. Hoffmann and coworkers [Hoffmann et al., IEEE Trans. Appl. Supercond. 21, 1628 (2011)] discovered, however, flux pumping effect when a superconducting tape is under an inhomogeneous field orthogonal to the tape surface generated by rotating magnets. Following their work, we report the whole Voltage-Ampere (V-I) curves of an YBCO coated conductor under permanent magnets rotating with different frequencies and directions. We discovered that the two curves under opposite rotating directions differ from each other constantly when the transport current is less than the critical current, whereas the difference gradually reduces after the transport current exceeds the critical value. We also find that for different field frequencies, the difference between the two curves decreases faster with lower field frequency. The result indicates that the transport loss is dependent on the relative direction of the transport current and field travelling, which is distinct from traditional dynamic resistance model. The work may be instructive for the design of superconducting motors.

  7. Superconducting-electromagnetic hybrid bearing using YBCO bulk blocks for passive axial levitation

    NASA Astrophysics Data System (ADS)

    Nicolsky, R.; de Andrade, R., Jr.; Ripper, A.; David, D. F. B.; Santisteban, J. A.; Stephan, R. M.; Gawalek, W.; Habisreuther, T.; Strasser, T.

    2000-06-01

    A superconducting/electromagnetic hybrid bearing has been designed using active radial electromagnetic positioning and a superconducting passive axial levitator. This bearing has been tested for an induction machine with a vertical shaft. The prototype was conceived as a four-pole, two-phase induction machine using specially designed stator windings for delivering torque and radial positioning simultaneously. The radial bearing uses four eddy-current sensors, displaced 90° from each other, for measuring the shaft position and a PID control system for feeding back the currents. The stator windings have been adapted from the ones of a standard induction motor. The superconducting axial bearing has been assembled with commercial NdFeB permanent magnets and a set of seven top-seeded-melt-textured YBCO large-grain cylindrical blocks. The bearing set-up was previously simulated by a finite element method for different permanent magnet-superconductor block configurations. The stiffness of the superconducting axial bearing has been investigated by measuring by a dynamic method the vertical and transversal elastic constants for different field cooling processes. The resulting elastic constants show a linear dependence on the air gap, i.e. the clearance between the permanent magnet assembly and the set of superconducting large-grain blocks, which is dependent on cooling distance.

  8. MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs

    NASA Astrophysics Data System (ADS)

    Abermann, S.; Pozzovivo, G.; Kuzmik, J.; Strasser, G.; Pogany, D.; Carlin, J.-F.; Grandjean, N.; Bertagnolli, E.

    2007-12-01

    We apply metal organic chemical vapour deposition (MOCVD) of HfO2 and of ZrO2 from β-diketonate precursors to grow high-k gate dielectrics for InAlN/AlN/GaN metal oxide semiconductor (MOS)-high electron mobility transistors (HEMTs). High-k oxides of about 12 nm-14 nm are deposited for the MOS-HEMTs incorporating Ni/Au gates, whereas as a reference, Ni-contact-based 'conventional' Schottky-barrier (SB)-HEMTs are processed. The processed dielectrics decrease the gate current leakage of the HEMTs by about four orders of magnitude if compared with the SB-gated HEMTs and show superior device characteristics in terms of IDS and breakdown.

  9. Analysis of a High-Tc Hot-Electron Superconducting Mixer for Terahertz Applications

    NASA Technical Reports Server (NTRS)

    Karasik, B. S.; McGrath, W. R.; Gaidis, M. C.

    1996-01-01

    The prospects of a YBa2Cu3O7(delta)(YBCO) hot-electron bolometer (HEB) mixer for a THz heterodyne receiver is discussed. The modeled device is a submicron bridge made from a 10 nm thick film on a high thermal conductance substrate.

  10. Contact resistance and normal zone formation in coated yttrium barium copper oxide superconductors

    NASA Astrophysics Data System (ADS)

    Duckworth, Robert Calvin

    2001-11-01

    This project presents a systematic study of contact resistance and normal zone formation in silver coated YBa2CU3Ox (YBCO) superconductors. A unique opportunity exists in YBCO superconductors because of the ability to use oxygen annealing to influence the interfacial properties and the planar geometry of this type of superconductor to characterize the contact resistance between the silver and YBCO. The interface represents a region that current must cross when normal zones form in the superconductor and a high contact resistance could impede the current transfer or produce excess Joule heating that would result in premature quench or damage of the sample. While it has been shown in single-crystalline YBCO processing methods that the contact resistance of the silver/YBCO interface can be influenced by post-process oxygen annealing, this has not previously been confirmed for high-density films, nor for samples with complete layers of silver deposited on top of the YBCO. Both the influence of contact resistance and the knowledge of normal zone formation on conductor sized samples is essential for their successful implementation into superconducting applications such as transmission lines and magnets. While normal zone formation and propagation have been studied in other high temperature superconductors, the amount of information with respect to YBCO has been very limited. This study establishes that the processing method for the YBCO does not affect the contact resistance and mirrors the dependence of contact resistance on oxygen annealing temperature observed in earlier work. It has also been experimentally confirmed that the current transfer length provides an effective representation of the contact resistance when compared to more direct measurements using the traditional four-wire method. Finally for samples with low contact resistance, a combination of experiments and modeling demonstrate an accurate understanding of the key role of silver thickness and substrate

  11. Advanced development of TFA-MOD coated conductors

    NASA Astrophysics Data System (ADS)

    Rupich, M. W.; Li, X.; Sathyamurthy, S.; Thieme, C.; Fleshler, S.

    2011-11-01

    American Superconductor is manufacturing 2G wire for initial commercial applications. The 2G wire properties satisfy the requirements for these initial projects; however, improvements in the critical current, field performance and cost are required to address the broad range of potential commercial and military applications. In order to meet the anticipated the performance and cost requirements, AMSC's R&D effort is focused on two major areas: (1) higher critical current and (2) enhanced flux pinning. AMSC's current 2G production wire, designed around a 0.8 μm thick YBCO layer deposited by a Metal Organic Deposition (MOD) process, carries a critical current in the range of 200-300 A/cm-w (77 K, sf). Achieving higher critical current requires increasing the thickness of the YBCO layer. This paper describes recent progress at AMSC on increasing the critical current of MOD-YBCO films using processes compatible with low-cost, high-rate manufacturing.

  12. Fabrication of YBa2Cu3O7 twin-boundary-junction dc SQUID by using a focused-ion-beam pattern technique

    NASA Astrophysics Data System (ADS)

    Lee, Sung Hoon; Lee, Soon-Gul

    2017-09-01

    We have fabricated YBa2Cu3O7 (YBCO) dc SQUIDs containing nanobridges across twin boundaries of LaAlO3 (LAO) substrates as Josephson elements by using a focused ion beam (FIB) etching method and measured their transport properties. The beam energy was 30 keV and the current was 1.5 pA for the nanobridge pattern. Each bridge with a nominal width of 200 nm crossed a twin boundary in the (100) direction. The SQUID loop had a 10 μm × 10 μm hole with a 5.7 μm average linewidth. The SQUID voltage showed modulations in response to the external flux with a maximum modulation depth of 350 μV at 77.0 K. HR-XRD spectra showed that the epitaxially grown YBCO film was twinned in commensurate with the twinning of the LAO substrate. Tilting of the c-axis of YBCO across the twin boundary is believed to play a role as a tunnel barrier.

  13. Buffer layer for thin film structures

    DOEpatents

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2006-10-31

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  14. Buffer layer for thin film structures

    DOEpatents

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2010-06-15

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  15. Investigation on structural, optical and electrical properties of Cp2Mg flow varied p-GaN grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Surender, S.; Pradeep, S.; Ramesh, R.; Baskar, K.

    2016-05-01

    In this work the effect of different concentration of Magnesium doped GaN (p-GaN) were systematically studied. The p-GaN epilayers were grown on c-plane sapphire substrate by horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD) with various flow rates of 100 sccm to 300 sccm using bis-(cyclopentadienyl) - magnesium (Cp2Mg) precursor. The samples were subjected to structural, optical, morphological and electrical studies using High Resolution X-ray diffraction (HRXRD), room temperature photoluminescence (PL), Atomic Force Microscopy (AFM) and Hall measurement respectively. Results indicated that the Mg doped GaN of 200 sccm Cp2Mg has the root mean square (rms) roughness of about 0.3 nm for a scan area of 5×5 µm2 which has good two dimensional growth. Moreover, Hall measurements results shows that (200 sccm Cp2Mg) Mg-doped GaN possess the highest hole concentration of 5.4×1017cm-3 and resistivity of 1.7 Ωcm at room temperature.

  16. Novel Electronic States of Heavy Fermion Compound YbCo2Zn20

    NASA Astrophysics Data System (ADS)

    Honda, Fuminori; Taga, Yuki; Hirose, Yusuke; Yoshiuchi, Shingo; Tomooka, Yoshiharu; Ohya, Masahiro; Sakaguchi, Jyunya; Takeuchi, Tetsuya; Settai, Rikio; Shimura, Yasuyuki; Sakakibara, Toshiro; Sheikin, Ilya; Tanaka, Toshiki; Kubo, Yasunori; Ōnuki, Yoshichika

    2014-04-01

    We studied the heavy fermion compound YbCo2Zn20 with an electronic specific heat coefficient γ ≃ 8000 mJ/(K2·mol) by measuring the de Haas-van Alphen (dHvA) oscillation, Hall effect, magnetic susceptibility, and magnetization at ambient pressure, as well as the electrical resistivity in magnetic fields of up to 320 kOe and at pressures of up to 5 GPa. The detected Fermi surfaces are small in volume, reflecting the small Brillouin zone based on the large cubic lattice constant a = 14.005 Å. The cyclotron effective masses, which were determined from the dHvA experiment, are found to be markedly reduced in magnetic fields. In other words, the detected cyclotron masses of 2.2-8.9 m0 (m0: the rest mass of an electron) at Hav = 117 kOe are enhanced to 100-500 m0 at 0 kOe. By applying pressure, the heavy fermion state disappears at Pc ≃ 1.8 GPa and orders antiferromagnetically for P > Pc. The field-induced antiferroquadrupolar phase, which is observed only for Hallel < 111> in the magnetic field range from HQ = 60 kOe to H'Q = 210 kOe, is found to shift to lower magnetic fields and merge with theantiferromagnetic phase at 4.5 GPa.

  17. High-Pressure Oxygenation of Mt-Ybco the way to Reduce the Oxygenation Time, to Prevent Macrocracking, and to Obtain Materials with High Critical Currents.

    NASA Astrophysics Data System (ADS)

    Prikhna, T. A.; Chaud, X.; Gawalek, W.; Joulain, A.; Rabier, J.; Moshchil, V. E.; Savchuk, Ya. M.; Sergienko, N. V.; Dub, S. N.; Melnikov, V. S.; Habisreuther, T.; Litzkendorf, D.; Bierlich, J.

    2008-03-01

    The oxygenation of MT-YBCO under isostatic oxygen pressure (up to 16 MPa) at 900-800 °C allowed reduced process time, lower macrocracking, and reduced microcracks. Additionally higher critical currents, trapped fields and mechanical characteristics can be attained. At 77 K thin-walled MT-YBCO had a jc in the ab plane of 85 kA/cm2 at 0 T and higher than 10 kA/cm2 in fields up to 5 T and the irreversibility field was 9.8 T. In the c-direction jc was 34 kA/cm2 in 0 T and higher than 2.5 kA/cm2 in a 10 T field. At 4.9 N-load the micohardness, Hv, was 8.7±0.3 GPa in the ab-plane and 7.6±0.3 GPa in the c-direction. The fracture toughness, K1C, was 2.5±0.1 MPaṡm0.5 (ab-plane) and 2.8±0.24 MPaṡm0.5 (c-direction). The samples with a higher twin density demonstrated a higher jc, especially in applied magnetic field. The twin density correlates with the sizes and distribution of Y211 grains in Y123. The thin-walled ceramics that demonstrated the highest jc contained about 22 twins in 1 μm and were practically free from dislocations and stacking faults. The maximal trapped field of the block of thin-walled ceramic oxygenated at 900-800 °C and 16 MPa was doubled as compared to that oxygenated at low temperature under ambient pressure.

  18. Feasibility studies of the growth of 3-5 compounds of boron by MOCVD

    NASA Technical Reports Server (NTRS)

    Manasevit, H. M.

    1988-01-01

    Boron-arsenic and boron-phosphorus films have been grown on Si sapphire and silicon-on-sapphire (SOS) by pyrolyzing Group 3 alkyls of boron, i.e., trimethylborane (TMB) and triethylborane (TEB), in the presence of AsH3 and PH3, respectively, in an H2 atmosphere. No evidence for reaction between the alkyls and the hydrides on mixing at room temperature was found. However, the films were predominantly amorphous. The film growth rate was found to depend on the concentration of alkyl boron compound and was essentially constant when TEB and AsH3 were pyrolyzed over the temperature range 550 C to 900 C. The films were found to contain mainly carbon impurities (the amount varying with growth temperature), some oxygen, and were highly stressed and bowed on Si substrates, with some crazing evident in thin (2 micron) B-P and thick (5 micron) B-As films. The carbon level was generally higher in films grown using TEB as the boron source. Films grown from PH3 and TMB showed a higher carbon content than those grown from AsH3 and TMB. Based on their B/As and B/P ratios, films with nominal compositions B sub12-16 As2 and B sub1.1-1.3 P were grown using TMB as the boron source.

  19. A comparison of superconductor and manganin technology for electronic links used in space mission applications

    NASA Technical Reports Server (NTRS)

    Caton, R.; Selim, R.; Buoncristiani, A. M.

    1992-01-01

    The electronic link connecting cryogenically cooled radiation detectors to data acquisition and signal processing electronics at higher temperatures contributes significantly to the total heat load on spacecraft cooling systems that use combined mechanical and cryogenic liquid cooling. Using high transition temperature superconductors for this link has been proposed to increase the lifetime of space missions. Herein, several YBCO (YBa2Cu3O7) superconductor-substrate combinations were examined and total heat loads were compared to manganin wire technology in current use. Using numerical solutions to the heat-flow equations, it is shown that replacing manganin technology with YBCO thick film technology can extend a 7-year mission by up to 1 year.

  20. On the Maximum and Characteristic Curvature of Current Density of High tc Superconductor Ybco in Flux Relaxation

    NASA Astrophysics Data System (ADS)

    Ye, Jiping; Sun, Lei; Dai, Xianxi; Dai, Jixin

    The flux relaxation is one of important topics in the studies of high Tc superconductivity, because it is related to the energy loss in practical applications. There are many mechanisms, theories and relaxation laws suggested in the literatures. It is very interesting to test them according to the characters and compare them with the experiments. Some people think that the characters of the famous theories are their negative curvature. According our inversion solution, the relaxation ArcG law and experimental data analysis, the relaxation law has both positive and negative signs. This prediction is hopeful to be checked by experiments in future. The current densities of many high Tc superconductors decrease very rapidly in the early time in the relaxation. People do not know what their maximums are. In this work, a theory to determine these maximums of the current densities is presented. The theory is concretely realized by inversion for some real data of the YBCO and their maximum current densities are obtained.

  1. Low Loss Substrates for Microwave Applications and Sol-Gel Processing of Superconductors

    DTIC Science & Technology

    1994-03-31

    crystallographic axis normal to solid state technology, in the growth of ferrimagnetic garnets the substrate plane) or. better, in "epitaxial" films (i.e...hay- by liquid phase epitaxy ( LPE ). is from a melt using a para- ing their three crystallographic axes related to those of a magnetic garnet structure...yttrium barium cuprate (YBCO) films and their microwave applications have been carried out. Several promising new hosts such as Sr(All/2Tal/2)03, Sr(Al1

  2. Improvement of crystalline quality of N-polar AlN layers on c-plane sapphire by low-pressure flow-modulated MOCVD

    NASA Astrophysics Data System (ADS)

    Takeuchi, M.; Shimizu, H.; Kajitani, R.; Kawasaki, K.; Kumagai, Y.; Koukitu, A.; Aoyagi, Y.

    2007-01-01

    The growth of N-polar AlN layers on c-plane sapphire is reported. Low-temperature AlN (LT-AlN) layers were used as seeding buffer layers with pre-nitridation for sapphire. To avoid strong vapor-phase reaction between trimethylaluminum (TMA) and ammonia (NH 3) and to improve the crystalline quality, low-pressure flow-modulated (FM) metal-organic chemical vapor deposition (MOCVD) technique was introduced with careful optimization of the FM sequence. The surface morphologies and the crystalline quality defined by the X-ray diffraction (XRD) (0 0 2) and (1 0 0) rocking curve measurements strongly depended on the LT-AlN thickness and on the TMA coverage per cycle of the FM growth. The sample showing the best XRD data with a good morphology was almost completely etched in aqueous KOH solution owing to N-polarity. From the plan-view transmission electron microscopy (TEM) observation, the dislocation density was counted to be about 3×10 10 cm -2.

  3. Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach

    NASA Astrophysics Data System (ADS)

    Izyumskaya, N.; Okur, S.; Zhang, F.; Monavarian, M.; Avrutin, V.; Özgür, Ü.; Metzner, S.; Karbaum, C.; Bertram, F.; Christen, J.; Morkoç, H.

    2014-03-01

    Nonpolar m-plane GaN layers were grown on patterned Si (112) substrates by metal-organic chemical vapor deposition (MOCVD). A two-step growth procedure involving a low-pressure (30 Torr) first step to ensure formation of the m-plane facet and a high-pressure step (200 Torr) for improvement of optical quality was employed. The layers grown in two steps show improvement of the optical quality: the near-bandedge photoluminescence (PL) intensity is about 3 times higher than that for the layers grown at low pressure, and deep emission is considerably weaker. However, emission intensity from m-GaN is still lower than that of polar and semipolar (1 100 ) reference samples grown under the same conditions. To shed light on this problem, spatial distribution of optical emission over the c+ and c- wings of the nonpolar GaN/Si was studied by spatially resolved cathodoluminescence and near-field scanning optical microscopy.

  4. ZnO/(Hf,Zr)O2/ZnO-trilayered nanowire capacitor structure fabricated solely by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Fujisawa, Hironori; Kuwamoto, Kei; Nakashima, Seiji; Shimizu, Masaru

    2016-02-01

    HfO2-based thin films are one of the key dielectric and ferroelectric materials in Si-CMOS LSIs as well as in oxide electronic nanodevices. In this study, we demonstrated the fabrication of a ZnO/(Hf,Zr)O2/ZnO-trilayered nanowire (NW) capacitor structure solely by metalorganic chemical vapor deposition (MOCVD). 15-nm-thick dielectric (Hf,Zr)O2 and 40-nm-thick top ZnO electrode layers were uniformly grown by MOCVD on a ZnO NW template with average diameter, length, and aspect ratio of 110 nm, 10 µm, and ˜90, respectively. The diameter and aspect ratio of the resultant trilayerd NWs are 200-300 nm and above 30, respectively. The crystalline phase of HfO2 and stacked the structure are also discussed.

  5. Investigation of ZnSe-coated silicon substrates for GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Huber, Daniel A.; Olsen, Larry C.; Dunham, Glen; Addis, F. William

    1993-01-01

    Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

  6. High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.

    PubMed

    Chen, Zhaolong; Zhang, Xiang; Dou, Zhipeng; Wei, Tongbo; Liu, Zhiqiang; Qi, Yue; Ci, Haina; Wang, Yunyu; Li, Yang; Chang, Hongliang; Yan, Jianchang; Yang, Shenyuan; Zhang, Yanfeng; Wang, Junxi; Gao, Peng; Li, Jinmin; Liu, Zhongfan

    2018-06-08

    Single-crystalline GaN-based light-emitting diodes (LEDs) with high efficiency and long lifetime are the most promising solid-state lighting source compared with conventional incandescent and fluorescent lamps. However, the lattice and thermal mismatch between GaN and sapphire substrate always induces high stress and high density of dislocations and thus degrades the performance of LEDs. Here, the growth of high-quality GaN with low stress and a low density of dislocations on graphene (Gr) buffered sapphire substrate is reported for high-brightness blue LEDs. Gr films are directly grown on sapphire substrate to avoid the tedious transfer process and GaN is grown by metal-organic chemical vapor deposition (MOCVD). The introduced Gr buffer layer greatly releases biaxial stress and reduces the density of dislocations in GaN film and In x Ga 1- x N/GaN multiple quantum well structures. The as-fabricated LED devices therefore deliver much higher light output power compared to that on a bare sapphire substrate, which even outperforms the mature process derived counterpart. The GaN growth on Gr buffered sapphire only requires one-step growth, which largely shortens the MOCVD growth time. This facile strategy may pave a new way for applications of Gr films and bring several disruptive technologies for epitaxial growth of GaN film and its applications in high-brightness LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. ZnO thin films and nanostructures for emerging optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Rogers, D. J.; Teherani, F. H.; Sandana, V. E.; Razeghi, M.

    2010-02-01

    ZnO-based thin films and nanostructures grown by PLD for various emerging optoelectronic applications. AZO thin films are currently displacing ITO for many TCO applications due to recent improvements in attainable AZO conductivity combined with processing, cost and toxicity advantages. Advances in the channel mobilities and Id on/off ratios in ZnO-based TTFTs have opened up the potential for use as a replacement for a-Si in AM-OLED and AM-LCD screens. Angular-dependent specular reflection measurements of self-forming, moth-eye-like, nanostructure arrays grown by PLD were seen to have <0.5% reflectivity over the whole visible spectrum for angles of incidence between 10 and 60 degrees. Such nanostructures may be useful for applications such as AR coatings on solar cells. Compliant ZnO layers on mismatched/amorphous substrates were shown to have potential for MOVPE regrowth of GaN. This approach could be used as a means to facilitate lift-off of GaN-based LEDs from insulating sapphire substrates and could allow the growth of InGaN-based solar cells on cheap substrates. The green gap in InGaN-based LEDs was combated by substituting low Ts PLD n-ZnO for MOCVD n-GaN in inverted hybrid heterojunctions. This approach maintained the integrity of the InGaN MQWs and gave LEDs with green emission at just over 510 nm. Hybrid n-ZnO/p-GaN heterojunctions were also seen to have the potential for UV (375 nm) EL, characteristic of ZnO NBE emission. This suggests that there was significant hole injection into the ZnO and that such LEDs could profit from the relatively high exciton binding energy of ZnO.

  8. Ideal charge-density-wave order in the high-field state of superconducting YBCO

    DOE PAGES

    Jang, H.; Lee, W. -S.; Nojiri, H.; ...

    2016-12-05

    The existence of charge-density-wave (CDW) correlations in cuprate superconductors has now been established. However, the nature of the CDW ground state has remained uncertain because disorder and the presence of superconductivity typically limit the CDW correlation lengths to only a dozen unit cells or less. Here we explore the field-induced 3D CDW correlations in extremely pure detwinned crystals of YBa 2Cu 3O 2 (YBCO) ortho-II and ortho-VIII at magnetic fields in excess of the resistive upper critical field ( H c2) where superconductivity is heavily suppressed. We observe that the 3D CDW is unidirectional and possesses a long in-plane correlationmore » length as well as significant correlations between neighboring CuO 2 planes. It is significant that we observe only a single sharply defined transition at a critical field proportional to H c2, given that the field range used in this investigation overlaps with other high-field experiments including quantum oscillation measurements. The correlation volume is at least two to three orders of magnitude larger than that of the zero-field CDW. Furthermore, this is by far the largest CDW correlation volume observed in any cuprate crystal and so is presumably representative of the high-field ground state of an “ideal” disorder-free cuprate.« less

  9. Investigation on structural, optical and electrical properties of Cp2Mg flow varied p-GaN grown by MOCVD

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Surender, S.; Pradeep, S.; Ramesh, R.

    2016-05-23

    In this work the effect of different concentration of Magnesium doped GaN (p-GaN) were systematically studied. The p-GaN epilayers were grown on c-plane sapphire substrate by horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD) with various flow rates of 100 sccm to 300 sccm using bis-(cyclopentadienyl) - magnesium (Cp2Mg) precursor. The samples were subjected to structural, optical, morphological and electrical studies using High Resolution X-ray diffraction (HRXRD), room temperature photoluminescence (PL), Atomic Force Microscopy (AFM) and Hall measurement respectively. Results indicated that the Mg doped GaN of 200 sccm Cp2Mg has the root mean square (rms) roughness of about 0.3more » nm for a scan area of 5×5 µm{sup 2} which has good two dimensional growth. Moreover, Hall measurements results shows that (200 sccm Cp2Mg) Mg-doped GaN possess the highest hole concentration of 5.4×10{sup 17}cm{sup −3} and resistivity of 1.7 Ωcm at room temperature.« less

  10. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Polat, Ozgur; Ertugrul, Memhet; Thompson, James R

    To obtain an engineered surface for deposition of high-Tc superconductors, nanoscale modulations of the surface of the underlying LaMnO3 (LMO) cap layer is a potential source for generating microstructural defects in YBa2Cu3O7- (YBCO) films. These defects may improve the flux-pinning and consequently increase the critical current density, Jc. To provide such nanoscale modulation via a practical and scalable process, tantalum (Ta) and palladium (Pd) nano-islands were deposited using dc-magnetron sputtering on the surface of the cap layer of commercial metal tape templates for second-generation wires. The size and density of these nano-islands can be controlled by changing sputtering conditions suchmore » as the power and deposition time. Compared to the reference sample grown on an untreated LMO cap layer, the YBCO films grown on the LMO cap layers with Ta or Pd nano-islands exhibited improved in-field Jc performance. Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM) were used to assess the evolving size and density of the nano-islands.« less

  11. Noncatalytic thermocouple coatings produced with chemical vapor deposition for flame temperature measurements.

    PubMed

    Bahlawane, N; Struckmeier, U; Kasper, T S; Osswald, P

    2007-01-01

    Chemical vapor deposition (CVD) and metal-organic chemical vapor deposition (MOCVD) have been employed to develop alumina thin films in order to protect thermocouples from catalytic overheating in flames and to minimize the intrusion presented to the combustion process. Alumina films obtained with a CVD process using AlCl(3) as the precursor are dense, not contaminated, and crystallize in the corundum structure, while MOCVD using Al(acetyl acetone)(3) allows the growth of corundum alumina with improved growth rates. These films, however, present a porous columnar structure and show some carbon contamination. Therefore, coated thermocouples using AlCl(3)-CVD were judged more suitable for flame temperature measurements and were tested in different fuels over a typical range of stoichiometries. Coated thermocouples exhibit satisfactory measurement reproducibility, no temporal drifts, and do not suffer from catalytic effects. Furthermore, their increased radiative heat loss (observed by infrared spectroscopy) allows temperature measurements over a wider range when compared to uncoated thermocouples. A flame with a well-known temperature profile established with laser-based techniques was used to determine the radiative heat loss correction to account for the difference between the apparent temperature measured by the coated thermocouple and the true flame temperature. The validity of the correction term was confirmed with temperature profile measurements for several flames previously studied in different laboratories with laser-based techniques.

  12. Heteroepitaxial growth of Ba1 - xSrxTiO3/YBa2Cu3O7 - x by plasma-enhanced metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Chern, C. S.; Liang, S.; Shi, Z. Q.; Yoon, S.; Safari, A.; Lu, P.; Kear, B. H.; Goodreau, B. H.; Marks, T. J.; Hou, S. Y.

    1994-06-01

    Epitaxial Ba1-xSrxTiO3(BST)/YBa2Cu3O7-x heterostructures with superior electrical and dielectric properties have been fabricated by plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD). Data of x-ray diffraction and high resolution transmission electron microscopy showed that <100> oriented Ba1-xSrxTiO3 layers were epitaxially deposited on epitaxial (001) YBa2Cu3O7-x layers. The leakage current density through the Ba1-xSrxTiO3 films was about 10-7 A/cm2 at 2 V (about 2×105 V/cm) operation. Moreover, the results of capacitance-temperature measurements showed that the PE-MOCVD Ba1-xSrxTiO3 films had Curie temperatures of about 30 °C and a peak dielectric constant of 600 at zero bias voltage. The Rutherford backscattering spectrometry and x-ray diffraction results showed that the BST film composition was controlled between Ba0.75Sr0.25TiO3 and Ba0.8Sr0.2TiO3. The structural and electrical properties of the Ba1-xSrxTiO3/YBa2Cu3O7-x heterostructure indicated that conductive oxide materials with close lattice to Ba1-xSrxTiO3 can be good candidates for the bottom electrode.

  13. High Tc superconducting bolometric and nonbolometric infrared (IR) detectors

    NASA Technical Reports Server (NTRS)

    Lakeou, Samuel; Rajeswari, M.; Goyal, Anuja

    1995-01-01

    The workplan for the period August 1994 through August 1995 includes the following: (1) expand the Applied Superconductivity Laboratory to include stand-alone optical response and noise measurement setups; (2) pursue studies of the low frequency excess electrical noise in YBCO films; and (3) enhance the academic support component of the project through increased student and faculty participation.

  14. Wafer scale BN on sapphire substrates for improved graphene transport.

    PubMed

    Vangala, Shivashankar; Siegel, Gene; Prusnick, Timothy; Snure, Michael

    2018-06-11

    Wafer scale (2") BN grown by metal organic chemical vapor deposition (MOCVD) on sapphire was examined as a weakly interacting dielectric substrate for graphene, demonstrating improved transport properties over conventional sapphire and SiO 2 /Si substrates. Chemical vapor deposition grown graphene was transferred to BN/sapphire substrates for evaluation of more than 30 samples using Raman and Hall effects measurements. A more than 2x increase in Hall mobility and 10x reduction in sheet carrier density was measured for graphene on BN/sapphire compared to sapphire substrates. Through control of the MOCVD process, BN films with roughness ranging from <0.1 nm to >1 nm were grown and used to study the effects of substrate roughness on graphene transport. Arrays of graphene field effect transistors were fabricated on 2" BN/sapphire substrates demonstrating scalability and device performance enhancement.

  15. Experimental characterization and modeling for the growth rate of oxide coatings from liquid solutions of metalorganic precursors by ultrasonic pulsed injection in a cold-wall low-pressure reactor

    NASA Astrophysics Data System (ADS)

    Krumdieck, Susan Pran

    Several years ago, a method for depositing ceramic coatings called the Pulsed-MOCVD system was developed by the Raj group at Cornell University in association with Dr. Harvey Berger and Sono-Tek Corporation. The process was used to produce epitaxial thin films of TiO2 on sapphire substrates under conditions of low pressure, relatively high temperature, and very low growth rate. The system came to CU-Boulder when Professor Raj moved here in 1997. It is quite a simple technique and has several advantages over typical CVD systems. The purpose of this dissertation is two-fold; (1) understand the chemical processes, thermodynamics, and kinetics of the Pulsed-MOCVD technique, and (2) determine the possible applications by studying the film structure and morphology over the entire range of deposition conditions. Polycrystalline coatings of ceramic materials were deposited on nickel in the low-pressure, cold-wall reactor from metalorganic precursors, titanium isopropoxide, and a mixture of zirconium isopropoxide and yttria isopropoxide. The process utilized pulsed liquid injection of a dilute precursor solution with atomization by ultrasonic nozzle. Thin films (less than 1mum) with fine-grained microstructure and thick coatings (up to 1mum) with columnar-microstructure were deposited on heated metal substrates by thermal decomposition of a single liquid precursor. The influence of each of the primary deposition parameters, substrate temperature, total flow rate, and precursor concentration on growth rate, conversion efficiency and morphology were investigated. The operating conditions were determined for kinetic, mass transfer, and evaporation process control regimes. Kinetic controlled deposition was found to produce equiaxed morphology while mass transfer controlled deposition produced columnar morphology. A kinetic model of the deposition process was developed and compared to data for deposition of TiO2 from Ti(OC3H7) 4 precursor. The results demonstrate that growth

  16. Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Rybalchenko, D. V.; Mintairov, S. A.; Salii, R. A.

    Metamorphic Ga{sub 0.76}In{sub 0.24}As heterostructures for photovoltaic converters are grown by the MOCVD (metal–organic chemical vapor deposition) technique. It is found that, due to the valence-band offset at the p-In{sub 0.24}Al{sub 0.76}As/p-In{sub 0.24}Ga{sub 0.76}As (wide-gap window/emitter) heterointerface, a potential barrier for holes arises as a result of a low carrier concentration in the wide-gap material. The use of an InAlGaAs solid solution with an Al content lower than 40% makes it possible to raise the hole concentration in the widegap window up ~9 × 10{sup 18} cm{sup –3} and completely remove the potential barrier, thereby reducing the series resistance ofmore » the device. The parameters of an GaInAs metamorphic buffer layer with a stepwise In content profile are calculated and its epitaxial growth conditions are optimized, which improves carrier collection from the n-GaInAs base region and provides a quantum efficiency of 83% at a wavelength of 1064 nm. Optimization of the metamorphic heterostructure of the photovoltaic converter results in that its conversion efficiency for laser light with a wavelength of 1064 nm is 38.5%.« less

  17. Levitation and guidance force relaxations of the single-seeded and multi-seeded YBCO superconductors

    NASA Astrophysics Data System (ADS)

    Abdioglu, M.; Ozturk, K.; Kabaer, M.; Ekici, M.

    2018-01-01

    The stable levitation and guidance forces at higher force levels are important parameters for technological applicability of high temperature superconductors (HTSs) in Maglev and Flywheel energy storage systems. In this study, we have investigated the levitation and guidance force relaxation of both the single-seeded and multi-seeded YBCOs for different (HTS)-permanent magnetic guideway (PMG) arrangements in different cooling heights (CH). The measured saturated force values of Halbach PMG arrangements are bigger than the maximum force values of other PMGs. It is determined that the normalized magnetic levitation force (MLF) and normalized guidance force (GF) relaxation rate values decrease while the relaxation rates increase with increasing magnetic pole number and the effective external magnetic field area for both the single-seeded and multi-seeded YBCO. Also it can be said that the force stability at the higher force value of Halbach PMG arrangement indicates that the relaxation quality of Halbach PMG is better than that of the others. Additionally, it can be said that both the MLF and GF relaxation qualities of the multi-seeded YBCOs are better than that of the single-seeded ones. This magnetic force and relaxation results of the single-seeded and multi-seeded YBCOs are useful to optimize the loading capacity and lateral reliability of HTS Maglev and similar magnetic bearing systems.

  18. Modeling and Optimization of a High-Tc Hot-Electron Superconducting Mixer for Terahertz Applicaitons

    NASA Technical Reports Server (NTRS)

    Karasik, B. S.; McGrath, W. R.; Gaidis, M. C.; Burns, M. J.; Kleinsasser, A. W.; Delin, K. A.; Vasquez, R. P.

    1996-01-01

    The development of a YBa(sub 2)Cu(sub 3)O(sub 7-(kronecker delta))(YBCO) hot-electron bolometer (HEB) quasioptical mixer for a 2.5 heterodyne receiver is discussed. The modeled device is a submicron bridge made from a 10 nm thick film on a high thermal conductance substrate. The mixer performance expected for this device is analyzed in the framework of a two-temperature model which includes heating both of the electrons and the lattice. Also, the contribution of heat diffusion from the film through the substrate and from the film to the normal metal contacts is evaluated....a single sideband temperature of less than 2000k is predicted.

  19. Contribution of ion beam analysis methods to the development of second generation high temperature superconducting wires

    NASA Astrophysics Data System (ADS)

    Usov, I. O.; Arendt, P. N.; Foltyn, S. R.; Stan, L.; DePaula, R. F.; Holesinger, T. G.

    2010-06-01

    One of the crucial steps in the second generation high temperature superconducting wire program was development of the buffer-layer architecture. The architecture designed at the Superconductivity Technology Center at Los Alamos National Laboratory consists of several oxide layers wherein each layer plays a specific role, namely: nucleation layer, diffusion barrier, biaxially textured template, and intermediate layer providing a suitable lattice match to the superconducting Y 1Ba 2Cu 3O 7 (YBCO) compound. This report demonstrates how a wide range of ion beam analysis techniques (SIMS, RBS, channeling, PIXE, PIGE, NRA and ERD) was employed for analysis of each buffer layer and the YBCO film. These results assisted in understanding of a variety of physical processes occurring during the buffer layer fabrication and helped to optimize the buffer-layer architecture as a whole.

  20. Formation of vortex line around the glass transition in YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nojima, T.; Kakinuma, A.; Kuwasawa, Y.

    1996-12-01

    Two components of current-induced electric fields in ab plane, E{sub x} and E{sub y}, have been measured simultaneously on YBCO(123) films around the glass transition temperature T{sub g} in magnetic fields H with components (H{sub 0}, H{sub 0}, 0.1H{sub 0}), where x and y axes are parallel to the direction of the current density and c axis, respectively. In this condition, a finite transverse field E{sub y} almost equal to E{sub x} can be observed if the vortex lines form and move along the Lorentz force. In each H, the ratio {vert_bar}E{sub y}/E{sub x}{vert_bar} at a low current limit, whichmore » is zero far above T{sub g}, increases in the critical region and transfers to unity below T{sub g}. The authors results indicate that the vortices become lines with long range correlation along H direction at the vortex glass transition without receiving the effect of the intrinsic pinning.« less

  1. Nucleation, growth, and strain relaxation of lattice-mismatched 3-5 semiconductor epitaxial layers

    NASA Technical Reports Server (NTRS)

    Welser, R. E.; Guido, L. J.

    1994-01-01

    We have investigated the early stages of evolution of highly strained 2-D InAs layers and 3-D InAs islands grown by metal-organic chemical vapor deposition (MOCVD) on (100) and (111)B GaAs substrates. The InAs epilayer/GaAs substrate combination has been chosen because the lattice-mismatch is severe (approximately 7.2 percent), yet these materials are otherwise very similar. By examining InAs-on-GaAs composites instead of the more common In(x)Ga(1-x)As alloy we remove an additional degree of freedom (x) and thereby simplify data interpretation. A matrix of experiments is described in which the MOCVD growth parameters - susceptor temperature, Thin flux, and AsH3 flux - have been varied over a wide range. Scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and electron microprobe analysis have been employed to observe the thin film surface morphology. In the case of 3-D growth, we have extracted activation energies and power-dependent exponents that characterize the nucleation process. As a consequence, optimized growth conditions have been identified for depositing approximately 250 A thick (100) and (111)B oriented InAs layers with relatively smooth surfaces. Together with preliminary data on the strain relaxation of these layers, the above results on the evolution of thin InAs films indicate that the (111)B orientation is particularly promising for yielding lattice-mismatched films that are fully relaxed with only misfit dislocations at the epilayer/substrate interface.

  2. Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.

    PubMed

    Park, Ji-Hyeon; Kim, Min-Hee; Kissinger, Suthan; Lee, Cheul-Ro

    2013-04-07

    We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300-400 nm with a density of 6-7 × 10(7) cm(-2). The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current-voltage (I-V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).

  3. Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD

    NASA Astrophysics Data System (ADS)

    Park, Ji-Hyeon; Kim, Min-Hee; Kissinger, Suthan; Lee, Cheul-Ro

    2013-03-01

    We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300-400 nm with a density of 6-7 × 107 cm-2. The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current-voltage (I-V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).

  4. Comprehensive investigation of HgCdTe metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Raupp, Gregory B.

    1993-01-01

    The principal objective of this experimental and theoretical research program was to explore the possibility of depositing high quality epitaxial CdTe and HgCdTe at very low pressures through metalorganic chemical vapor deposition (MOCVD). We explored two important aspects of this potential process: (1) the interaction of molecular flow transport and deposition in an MOCVD reactor with a commercial configuration, and (2) the kinetics of metal alkyl source gas adsorption, decomposition and desorption from the growing film surface using ultra high vacuum surface science reaction techniques. To explore the transport-reaction issue, we have developed a reaction engineering analysis of a multiple wafer-in-tube ultrahigh vacuum chemical vapor deposition (UHV/CVD) reactor which allows an estimate of wafer or substrate throughput for a reactor of fixed geometry and a given deposition chemistry with specified film thickness uniformity constraints. The model employs a description of ballistic transport and reaction based on the pseudo-steady approximation to the Boltzmann equation in the limit of pure molecular flow. The model representation takes the form of an integral equation for the flux of each reactant or intermediate species to the wafer surfaces. Expressions for the reactive sticking coefficients (RSC) for each species must be incorporated in the term which represents reemission from a wafer surface. The interactions of MOCVD precursors with Si and CdTe were investigated using temperature programmed desorption (TPD) in ultra high vacuum combined with Auger electron spectroscopy (AES). These studies revealed that diethyltellurium (DETe) and dimethylcadmium (DMCd) adsorb weakly on clean Si(100) and desorb upon heating without decomposing. These precursors adsorb both weakly and strongly on CdTe(111)A, with DMCd exhibiting the stronger interaction with the surface than DETe.

  5. High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.

    PubMed

    Ra, Yong-Ho; Navamathavan, R; Park, Ji-Hyeon; Lee, Cheul-Ro

    2013-03-01

    This article describes the growth and device characteristics of vertically aligned high-quality uniaxial p-GaN/InxGa1-xN/GaN multiple quantum wells (MQW)/n-GaN nanowires (NWs) on Si(111) substrates grown by metal-organic chemical vapor deposition (MOCVD) technique. The resultant nanowires (NWs), with a diameter of 200-250 nm, have an average length of 2 μm. The feasibility of growing high-quality NWs with well-controlled indium composition MQW structure is demonstrated. These resultant NWs grown on Si(111) substrates were utilized for fabricating vertical-type light-emitting diodes (LEDs). The steep and intense photoluminescence (PL) and cathodoluminescence (CL) spectra are observed, based on the strain-free NWs on Si(111) substrates. High-resolution transmission electron microscopy (HR-TEM) analysis revealed that the MQW NWs are grown along the c-plane with uniform thickness. The current-voltage (I-V) characteristics of these NWs exhibited typical p-n junction LEDs and showed a sharp onset voltage at 2.75 V in the forward bias. The output power is linearly increased with increasing current. The result indicates that the pulsed MOCVD technique is an effective method to grow uniaxial p-GaN/InxGa1-xN/GaN MQW/n-GaN NWs on Si(111), which is more advantageous than other growth techniques, such as molecular beam epitaxy. These results suggest the uniaxial NWs are promising to allow flat-band quantum structures, which can enhance the efficiency of LEDs.

  6. Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene.

    PubMed

    Rigosi, Albert F; Hill, Heather M; Glavin, Nicholas R; Pookpanratana, Sujitra J; Yang, Yanfei; Boosalis, Alexander G; Hu, Jiuning; Rice, Anthony; Allerman, Andrew A; Nguyen, Nhan V; Hacker, Christina A; Elmquist, Randolph E; Hight Walker, Angela R; Newell, David B

    2018-01-01

    Monolayer epitaxial graphene (EG), grown on the Si face of SiC, is an advantageous material for a variety of electronic and optical applications. EG forms as a single crystal over millimeter-scale areas and consequently, the large scale single crystal can be utilized as a template for growth of other materials. In this work, we present the use of EG as a template to form millimeter-scale amorphous and hexagonal boron nitride ( a -BN and h -BN) films. The a -BN is formed with pulsed laser deposition and the h -BN is grown with triethylboron (TEB) and NH 3 precursors, making it the first metal organic chemical vapor deposition (MOCVD) process of this growth type performed on epitaxial graphene. A variety of optical and non-optical characterization methods are used to determine the optical absorption and dielectric functions of the EG, a -BN, and h -BN within the energy range of 1 eV to 8.5 eV. Furthermore, we report the first ellipsometric observation of high-energy resonant excitons in EG from the 4H polytype of SiC and an analysis on the interactions within the EG and h -BN heterostructure.

  7. CHEMICAL SOLUTION DEPOSITION BASED OXIDE BUFFERS AND YBCO COATED CONDUCTORS

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Paranthaman, Mariappan Parans

    We have reviewed briefly the growth of buffer and high temperature superconducting oxide thin films using a chemical solution deposition (CSD) method. In the Rolling-Assisted Biaxially Textured Substrates (RABiTS) process, developed at Oak Ridge National Laboratory, utilizes the thermo mechanical processing to obtain the flexible, biaxially oriented copper, nickel or nickel-alloy substrates. Buffers and Rare Earth Barium Copper Oxide (REBCO) superconductors have been deposited epitaxially on the textured nickel alloy substrates. The starting substrate serves as a template for the REBCO layer, which has substantially fewer weak links. Buffer layers play a major role in fabricating the second generation REBCOmore » wire technology. The main purpose of the buffer layers is to provide a smooth, continuous and chemically inert surface for the growth of the REBCO film, while transferring the texture from the substrate to the superconductor layer. To achieve this, the buffer layers need to be epitaxial to the substrate, i.e. they have to nucleate and grow in the same bi-axial texture provided by the textured metal foil. The most commonly used RABiTS multi-layer architectures consist of a starting template of biaxially textured Ni-5 at.% W (Ni-W) substrate with a seed (first) layer of Yttrium Oxide (Y2O3), a barrier (second) layer of Yttria Stabilized Zirconia (YSZ), and a Cerium Oxide (CeO2) cap (third) layer. These three buffer layers are generally deposited using physical vapor deposition (PVD) techniques such as reactive sputtering. On top of the PVD template, REBCO film is then grown by a chemical solution deposition. This article reviews in detail about the list of oxide buffers and superconductor REBCO films grown epitaxially on single crystal and/or biaxially textured Ni-W substrates using a CSD method.« less

  8. Macroscopic Magnetic Coupling Effect: The Physical Origination of a High-Temperature Superconducting Flux Pump

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Coombs, Tim

    2018-04-01

    We have uncovered at the macroscopic scale a magnetic coupling phenomenon in a superconducting YBa2Cu3O7 -δ (YBCO) film, which physically explains the mechanism of the high-temperature superconducting flux pump. The coupling occurs between the applied magnetic poles and clusters of vortices induced in the YBCO film, with each cluster containing millions of vortices. The coupling energy is verified to originate from the inhomogeneous field of the magnetic poles, which reshapes the vortex distribution, aggregates millions of vortices into a single cluster, and accordingly moves with the poles. A contrast study is designed to verify that, to provide the effective coupling energy, the applied wavelength must be short while the field amplitude must be strong, i.e., local-field inhomogeneity is the crucial factor. This finding broadens our understanding of the collective vortex behavior in an applied magnetic field with strong local inhomogeneity. Moreover, this phenomenon largely increases the controlled vortex flow rate by several orders of magnitude compared with existing methods, providing motivation for and physical support to a new branch of wireless superconducting dc power sources, i.e., the high-temperature superconducting flux pump.

  9. High Critical Current in Metal Organic Derived YBCO Films

    DTIC Science & Technology

    2010-10-31

    process, particularly in reel-to- reel manufacturing equipment. During Phase I, a “three-step” conversion process was developed to de- convolute the...Task 3. After reaction, the 40-mm web was coated on both sides with a silver layer then slit into eight 4-mm width tapes which were laminated between

  10. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Selvamanickam, V; Chen, Y; Shi, T

    The critical current and structural properties of (Gd,Y)BaCuO tapes made by metal organic chemical vapor deposition (MOCVD) with Zr addition levels up to 30 at.% have been investigated. The reduction in critical current beyond the previously optimized Zr addition level of 7.5 at.% was found to be due to structural deterioration of the (Gd,Y)Ba2Cu3Ox film. By a modified MOCVD process,enhanced critical current densities have been achieved with high levels of Zr addition,including 3.83 MA cm(-2) in 15 at.% Zr- added 1.1 mu m thick film at 77 K in zero magnetic field. Critical currents as high as 1072 A/ 12more » mm have been reached in (Gd,Y) BaCuO tapes with 15 at.% Zr addition at 30 K in a field of 3 T applied perpendicular to the tape,corresponding to a pinning force value of 268 GN m(-3). The enhanced critical currents achievable with a high density of nanoscale defects by employing high levels of second- phase additions enable the performance targets needed for the use of HTS tapes in coil applications involving high magnetic fields at temperatures below 50 K to be met.« less

  11. Enhanced critical currents in (Gd,Y)Ba2Cu3Ox superconducting tapes with high levels of Zr addition

    NASA Astrophysics Data System (ADS)

    Selvamanickam, V.; Chen, Y.; Shi, T.; Liu, Y.; Khatri, N. D.; Liu, J.; Yao, Y.; Xiong, X.; Lei, C.; Soloveichik, S.; Galstyan, E.; Majkic, G.

    2013-03-01

    The critical current and structural properties of (Gd,Y)BaCuO tapes made by metal organic chemical vapor deposition (MOCVD) with Zr addition levels up to 30 at.% have been investigated. The reduction in critical current beyond the previously optimized Zr addition level of 7.5 at.% was found to be due to structural deterioration of the (Gd,Y)Ba2Cu3Ox film. By a modified MOCVD process, enhanced critical current densities have been achieved with high levels of Zr addition, including 3.83 MA cm-2 in 15 at.% Zr-added 1.1 μm thick film at 77 K in zero magnetic field. Critical currents as high as 1072 A/12 mm have been reached in (Gd,Y)BaCuO tapes with 15 at.% Zr addition at 30 K in a field of 3 T applied perpendicular to the tape, corresponding to a pinning force value of 268 GN m-3. The enhanced critical currents achievable with a high density of nanoscale defects by employing high levels of second-phase additions enable the performance targets needed for the use of HTS tapes in coil applications involving high magnetic fields at temperatures below 50 K to be met.

  12. Physical properties of YBa 2Cu 3O 7- δ thin films using microstrip ring resonators technique

    NASA Astrophysics Data System (ADS)

    Lai, L. S.; Zeng, H. K.; Juang, J. Y.; Wu, K. H.; Uen, T. M.; Lin, J. Y.; Gou, Y. S.

    2006-09-01

    Microstrip ring resonators with quality factor ( Q) over 10 4 at temperature 5 K, were fabricated using the double-side YBa 2Cu 3O 7- δ (YBCO) epitaxial films deposited on LaAlO 3 (LAO) substrates. By placing a narrow gap in the ring resonator, we observed that the original fundamental resonating mode (resonance frequency f = 3.61 GHz) splits into a dual-mode with different resonating frequencies ( f = 1.80 GHz and f = 5.33 GHz). These two kinds of the resonator allow us to determine the temperature and frequency dependences of the magnetic penetration depth λ( T, f) and the surface loss. Several salient features of the above findings related to the nature of low-lying excitations for high- Tc superconductivity as a function of oxygen content will be elucidated. In particular, the current models, suggested by Wen and Lee, will be examined in a quantitative manner. It allows us to give a justification of quasiparticle as Fermi-liquid in the superconducting state. In addition, an equivalent inductance circuit model is suggested to account for the occurrence of the dual-mode resonance.

  13. Nanowire-templated lateral epitaxial growth of non-polar group III nitrides

    DOEpatents

    Wang, George T [Albuquerque, NM; Li, Qiming [Albuquerque, NM; Creighton, J Randall [Albuquerque, NM

    2010-03-02

    A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.

  14. Amorphous alumina coatings: processing, structure and remarkable barrier properties.

    PubMed

    Samélor, Diane; Lazar, Ana-Maria; Aufray, Maëlenn; Tendero, Claire; Lacroix, Loïc; Béguin, Jean-Denis; Caussat, Brigitte; Vergnes, Hugues; Alexis, Joël; Poquillon, Dominique; Pébère, Nadine; Gleizes, Alain; Vahlas, Constantin

    2011-09-01

    Amorphous aluminium oxide coatings were processed by metalorganic chemical vapour deposition (MOCVD); their structural characteristics were determined as a function of the processing conditions, the process was modelled considering appropriate chemical kinetic schemes, and the properties of the obtained material were investigated and were correlated with the nanostructure of the coatings. With increasing processing temperature in the range 350 degrees C-700 degrees C, subatmospheric MOCVD of alumina from aluminium tri-isopropoxide (ATI) sequentially yields partially hydroxylated amorphous aluminium oxides, amorphous Al2O3 (415 degrees C-650 degrees C) and nanostructured gamma-Al2O3 films. A numerical model for the process allowed reproducing the non uniformity of deposition rate along the substrate zone due to the depletion of ATI. The hardness of the coatings prepared at 350 degrees C, 480 degrees C and 700 degrees C is 6 GPa, 11 GPa and 1 GPa, respectively. Scratch tests on films grown on TA6V titanium alloy reveal adhesive and cohesive failures for the amorphous and nanocrystalline ones, respectively. Alumina coating processed at 480 degrees C on TA6V yielded zero weight gain after oxidation at 600 degrees C in lab air. The surface of such low temperature processed amorphous films is hydrophobic (water contact angle 106 degrees), while the high temperature processed nanocrystalline films are hydrophilic (48 degrees at a deposition temperature of 700 degrees C). It is concluded that amorphous Al2O3 coatings can be used as oxidation and corrosion barriers at ambient or moderate temperature. Nanostructured with Pt or Ag nanoparticles, they can also provide anti-fouling or catalytic surfaces.

  15. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mbamara, U. S.; Olofinjana, B.; Ajayi, O. O.

    Most researches on doped ZnO thin films are tilted toward their applications in optoelectronics and semiconductor devices. Research on their tribological properties is still unfolding. In this work, nitrogen-doped ZnO thin films were deposited on 304 L stainless steel substrate from a combination of zinc acetate and ammonium acetate precursor by MOCVD technique. Compositional and structural studies of the films were done using Rutherford Backscattering Spectroscopy (RBS) and X-ray Diffraction (XRD). The frictional behavior of the thin film coatings was evaluated using a ball-on-flat configuration in reciprocating sliding under dry contact condition. After friction test, the flat and ball counter-facemore » surfaces were examined to assess the wear dimension and failure mechanism. In conclusion, both friction behavior and wear (in the ball counter-face) were observed to be dependent on the crystallinity and thickness of the thin film coatings.« less

  16. Relationship of the Levitation Force Between Single and Multiple YBCO Bulks Above a Permanent Magnet Guideway Operating Dive-Lift Movement with Different Angles

    NASA Astrophysics Data System (ADS)

    Zeng, R.; Wang, S. Y.; Liao, X. L.; Deng, Z. G.; Wang, J. S.

    2013-04-01

    In practical applications, the acceleration and deceleration motions inevitably happen in the operation of high temperature superconducting (HTS) maglev trains. For further research of the maglev properties of YBaCuO bulk above a permanent magnet guideway (PMG), by moving a fixed vertical distance, this paper studies the relationship of the levitation force between single and multiple YBCO bulks above a PMG operating dive-lift movement with different angles. Experimental results show that the maximal levitation force increment of two bulks than one bulk is smaller than the maximal levitation force increment of three bulks than two bulks. With the degree decreasing, the maximal levitation force increment of three bulks is bigger than the maximal levitation force increment of two bulks and one bulk, and the hysteresis loop of the levitation force of the three-bulk arrangement is getting smaller.

  17. X-ray diffraction study of A- plane non-polar InN epilayer grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Moret, Matthieu; Briot, Olivier; Gil, Bernard

    2015-03-01

    Strong polarisation-induced electric fields in C-plane oriented nitrides semiconductor layers reduce the performance of devices. Eliminating the polarization fields can be achieved by growing nitrides along non polar direction. We have grown non polar A-plane oriented InN on R-plane (1‾102) nitridated sapphire substrate by MOCVD. We have studied the structural anisotropy observed in these layers by analyzing High Resolution XRay Diffraction rocking curve (RC) experiments as a function of the in-plane beam orientation. A-plane InN epilayer have a unique epitaxial relationship on R-Plane sapphire and show a strong structural anisotropy. Full width at half maximum (FWHM) of the InN(11‾20) XRD RC values are contained between 44 and 81 Arcmin. FWHM is smaller when the diffraction occurs along the [0001] and the largest FWHM values, of the (11‾20) RC, are obtained when the diffraction occurs along the [1‾100] in-plane direction. Atomic Force Microscopy imaging revealed morphologies with well organized crystallites. The grains are structured along a unique crystallographic orientation of InN, leading to larger domains in this direction. This structural anisotropy can be, in first approximation, attributed to the difference in the domain sizes observed. XRD reciprocal space mappings (RSM) were performed in asymmetrical configuration on (13‾40) and (2‾202) diffraction plane. RSM are measured with a beam orientation corresponding to a maximal and a minimal width of the (11‾20) Rocking curves, respectively. A simple theoretical model is exposed to interpret the RSM. We concluded that the dominant contribution to the anisotropy is due to the scattering coherence length anisotropy present in our samples.

  18. Frequency dependence of magnetic ac loss in a Roebel cable made of YBCO on a Ni-W substrate

    NASA Astrophysics Data System (ADS)

    Lakshmi, L. S.; Staines, M. P.; Badcock, R. A.; Long, N. J.; Majoros, M.; Collings, E. W.; Sumption, M. D.

    2010-08-01

    We have investigated the frequency dependent contributions to the magnetic ac loss in a 10 strand Roebel cable with 2 mm wide non-insulated strands and a transposition length of 90 mm. This cable is made from 40 mm wide YBCO coated conductor tape manufactured by AMSC and stabilized by electroplating 25 µm thick copper on either side prior to the mechanical punching of the cable strands. The measurements were carried out in both perpendicular and parallel field orientation, at frequencies in the range of 30-200 Hz. While the loss in the perpendicular orientation is predominantly hysteretic in nature, we observe some frequency dependence of the loss when the cable approaches full flux penetration at high field amplitudes. The magnitude is consistent with eddy current losses in the copper stabilization layer. This supports the fact that the inter-strand coupling loss is not significant in this frequency range. In the parallel field orientation, the hysteresis loss in the Ni-W alloy substrate dominates, but we see an unusually strong frequency dependent contribution to the loss which we attribute to intra-strand current loops.

  19. High- and Mid-temperature Superconducting Sensors for Far IR/Sub-mm Applications in Space

    NASA Technical Reports Server (NTRS)

    Lakew, Brook; Brasunas, J. C.

    2004-01-01

    In this review paper an overview of the potential applications of high Tc (approx. 90 K) superconductors (HTS) and mid-Tc (approx. 39 K) superconductors (MTS) thin films in far IR/Sub-mm thermal detectors is presented. HTSs (YBCO, GdBCO etc.) were discovered in the late 80s while superconductivity in MgB2, an MTS, was discovered in 2001. The sharp transition in transport properties of HTS has allowed the fabrication of composite infrared thermal detectors (bolometers) with better figures of merit than thermopile detectors - thermopiles are currently on board the CIRS instrument on the Cassini mission to Saturn. The potential for developing even more sensitive sensors for IR/Sub-mm applications using MgB2 thin films is assessed. Current MgB2 thin film deposition techniques and film quality are reviewed.

  20. A chemical and fluid dynamic study of the chemical vapor deposition of aluminum nitride in a vertical reactor

    NASA Astrophysics Data System (ADS)

    Bather, Wayne Anthony

    The metalorganic chemical vapor deposition (MOCVD) growth of compound semiconductors has become important in producing many high performance electronic and optoelectronic devices from the wide bandgaps III-V nitrides, for example, aluminum nitride (AlN). A systematic theoretical and experimental investigation of the chemistry and mass transport process in a MOCVD system can yield predictive models of the deposition process. The chemistries and fluid dynamics of the MOCVD growth of AlN in a vertical reactor is analyzed and characterized in order to parameterize and model the deposition process. A Fourier Transform Infrared (FTIR) spectroscopic study of the predeposition reactions between trimethylaluminum (TMAl) and ammonia (NHsb3) is carried out in a static gas cell to examine the primary homogeneous gas phase reactions, pyrolysis of the reactants, and adduct formation, possibly accompanied by elimination reactions. A series of reactions, based on laboratory studies and literature review, is then proposed to model the deposition process. All pertinent kinetic, thermochemical, and transport properties were obtained. Utilizing a mass transport model, we performed computational fluid dynamics calculations using the FLUENT software package. We determined temperature, velocity, and concentration profiles, along with deposition rates inside the experimental vertical CVD reactor in the Howard University Material Science Research Center of Excellence. Experimental deposition rate data were found to be in good agreement with those predicted from the simulations, thus validating the proposed model. The control of the homogeneous gas phase reaction leading to the formation and subsequent decomposition of the adduct is critical to the formation of device-grade AlN films. Many basic processes occurring during MOCVD of AlN are still not completely understood, and none of the detailed surface reaction mechanisms are known.

  1. Indium arsenide-on-SOI MOSFETs with extreme lattice mismatch

    NASA Astrophysics Data System (ADS)

    Wu, Bin

    Both molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) have been used to explore the growth of InAs on Si. Despite 11.6% lattice mismatch, planar InAs structures have been observed by scanning electron microscopy (SEM) when nucleating using MBE on patterned submicron Si-on-insulator (SOI) islands. Planar structures of size as large as 500 x 500 nm 2 and lines of width 200 nm and length a few microns have been observed. MOCVD growth of InAs also generates single grain structures on Si islands when the size is reduced to 100 x 100 nm2. By choosing SOI as the growth template, selective growth is enabled by MOCVD. Post-growth pattern-then-anneal process, in which MOCVD InAs is deposited onto unpatterned SOI followed with patterning and annealing of InAs-on-Si structure, is found to change the relative lattice parameters of encapsulated 17/5 nm InAs/Si island. Observed from transmission electron diffraction (TED) patterns, the lattice mismatch of 17/5 nm InAs/Si island reduces from 11.2 to 4.2% after being annealed at 800°C for 30 minutes. High-k Al2O3 dielectrics have been deposited by both electron-beam-enabled physical vapor deposition (PVD) and atomic layer deposition (ALD). Films from both techniques show leakage currents on the order of 10-9A/cm2, at ˜1 MV/cm electric field, breakdown field > ˜6 MV/cm, and dielectric constant > 6, comparable to those of reported ALD prior arts by Groner. The first MOSFETs with extreme lattice mismatch InAs-on-SOI channels using PVD Al2O3 as the gate dielectric are characterized. Channel recess was used to improve the gate control of the drain current.

  2. Electrical and dielectric properties of (barium, strontium) titanium trioxide thin film capacitors for ultra-high density dynamic random access memories

    NASA Astrophysics Data System (ADS)

    Basceri, Cem

    The electrical and dielectric properties of fiber-textured, MOCVD (Basb{0.7}Srsb{0.3})TiOsb3 (BST) thin film capacitors appropriate for ultra-large scale integration (ULSI) dynamic random access memory (DRAM) applications have been analyzed. Dielectric relaxation, leakage, resistance degradation, and dielectric response phenomena, within a comprehensive matrix of external and material parameters, have been investigated. The phenomenology of the dielectric response of our BST films has been shown to be well-described by Curie-von Schweidler behavior, although the microscopic origin of this behavior has not been presently agreed upon. The time-dependent polarization behavior has been linked to the dispersion in permittivity with respect to frequency. The leakage current through our BST films has been found to be primarily limited by interfacial Schottky barriers whose properties depend on the electrode material, interface microstructure, and deposition conditions. Its temperature and voltage dependence have been interpreted via a thermionic emission model. Analysis in terms of Schottky-barrier limited current flow gave acceptable values for the cathode barrier height. The results have indicated that our BST films, appropriate for DRAM applications, do not possess depletion layers at the film-electrode interfaces. Instead, they must be considered as depleted of charge carriers across their entire thickness. Resistance degradation has been found to be thermally activated and voltage/field dependent. The results have indicated that there is a film thickness effect, which manifests itself as a decrease in the activation energy with respect to temperature for thicker films. A significant stoichiometry effect on the measured resistance degradation lifetimes has been observed. The analyses of the leakage and capacitance-voltage behaviors for the degraded samples have indicated that a demixing of oxygen vacancies occurs during resistance degradation, which causes the

  3. High and Low Energy Proton Radiation Damage in p/n InP MOCVD Solar Cells

    NASA Technical Reports Server (NTRS)

    Rybicki, George; Weinberg, Irv; Scheiman, Dave; Vargas-Aburto, Carlos; Uribe, Roberto

    1995-01-01

    InP p(+)/n/n(+) solar cells, fabricated by metal organic chemical vapor deposition, (MOCVD) were irradiated with 0.2 MeV and 10 MeV protons to a fluence of 10(exp 13)/sq cm. The power output degradation, IV behavior, carrier concentration and defect concentration were observed at intermediate points throughout the irradiations. The 0.2 MeV proton-irradiated solar cells suffered much greater and more rapid degradation in power output than those irradiated with 10 MeV protons. The efficiency losses were accompanied by larger increases in the recombination currents in the 0.2 MeV proton-irradiated solar cells. The low energy proton irradiations also had a larger impact on the series resistance of the solar cells. Despite the radiation induced damage, the carrier concentration in the base of the solar cells showed no reduction after 10 MeV or 0.2 MeV proton irradiations and even increased during irradiation with 0.2 MeV protons. In a deep level transient spectroscopy (DLTS) study of the irradiated samples, the minority carrier defects H4 and H5 at E(sub v) + 0.33 and E(sub v) + 0.52 eV and the majority carrier defects E7 and El0 at E(sub c) - 0.39 and E(sub c) - 0.74 eV, were observed. The defect introduction rates for the 0.2 MeV proton irradiations were about 20 times higher than for the 10 MeV proton irradiations. The defect El0, observed here after irradiation, has been shown to act as a donor in irradiated n-type InP and may be responsible for obscuring carrier removal. The results of this study are consistent with the much greater damage produced by low energy protons whose limited range causes them to stop in the active region of the solar cell.

  4. High and low energy proton radiation damage in p/n InP MOCVD solar cells

    NASA Technical Reports Server (NTRS)

    Rybicki, George; Weinberg, Irving; Scheiman, Dave; Vargas-Aburto, Carlos

    1995-01-01

    InP p(+)nn(+) MOCVD solar cells were irradiated with 0.2 MeV and 10 MeV protons to a fluence of 10(exp 13)/sq cm. The degradation of power output, IV behavior, carrier concentration and defect concentration were observed at intermediate points throughout the irradiations. The 0.2 MeV proton irradiated solar cells suffered much greater and more rapid degradation in power output than those irradiated with 10 meV protons. The efficiency losses were accompanied by larger increases in the recombination currents in the 0.2 MeV proton irradiated solar cells. The low energy proton irradiations also had a larger impact on the series resistance of the solar cells. Despite the radiation induced damage, the carrier concentration in the base of the solar cells showed no reduction after 10 MeV or 0.2 MeV proton irradiations and even increased during irradiation with 0.2 MeV protons. In a DLTS study of the irradiated samples, the minority carrier defects H4 and H5 at E(v) + 0.33 and E(v) + 0.52 eV and the majority carrier defects E7 and E10 at E(c)- 0.39 and E(c)-0.74 eV, were observed. The defect introduction rates for the 0.2 MeV proton irradiations were about 20 times higher than for the 10 MeV proton irradiations. The defect E10, observed here after irradiation, has been shown to act as a donor in irradiated n-type InP and may be responsible for obscuring carrier removal. The results of this study are consistent with the much greater damage produced by low energy protons whose limited range causes them to stop in the active region of the solar cell.

  5. The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Fini, P.; Wu, X.; Tarsa, E.; Golan, Y.; Srikant, V.; Keller, S.; Denbaars, S.; Speck, J.

    1998-08-01

    The evolution of morphology and associated extended defects in GaN thin films grown on sapphire by metalorganic chemical vapor deposition (MOCVD) are shown to depend strongly on the growth environment. For the commonly used two-step growth process, a change in growth parameter such as reactor pressure influences the initial high temperature (HT) GaN growth mechanism. By means of transmission electron microscopy (TEM), atomic force microscopy (AFM), and high resolution X-ray diffraction (HRXRD) measurements, it is shown that the initial density of HT islands on the nucleation layer (NL) and subsequently the threading dislocation density in the HT GaN film may be directly controlled by tailoring the initial HT GaN growth conditions.

  6. Optical Probing of Low-Pressure Solution Grown GaN Crystal Properties

    DTIC Science & Technology

    2010-04-01

    observed in Mg and Si doped epitaxial films deposited by MBE and MOCVD on freestanding GaN HVPE substrates [23–25]. Considering the purity of the precursors...bands with similar energy positions here reported, a dominant deeper acceptor impurity has been assigned to Zn , a well known deep acceptor in GaN . Room...00-00-2010 to 00-00-2010 4. TITLE AND SUBTITLE Optical probing of low-pressure solution grown GaN crystal properties 5a. CONTRACT NUMBER 5b

  7. Ellipsometric study of metal-organic chemically vapor deposited III-V semiconductor structures

    NASA Technical Reports Server (NTRS)

    Alterovitz, Samuel A.; Sekula-Moise, Patricia A.; Sieg, Robert M.; Drotos, Mark N.; Bogner, Nancy A.

    1992-01-01

    An ellipsometric study of MOCVD-grown layers of AlGaAs and InGaAs in thick films and strained layer complex structures is presented. It is concluded that the ternary composition of thick nonstrained layers can be accurately determined to within experimental errors using numerical algorithms. In the case of complex structures, thickness of all layers and the alloy composition of nonstrained layers can be determined simultaneously, provided that the correlations between parameters is no higher than 0.9.

  8. Scientific Presentations on Superconductivity from 2002-2005

    DTIC Science & Technology

    2006-01-01

    00 Dark-field reflection, using 211 diffraction vector Bright-field transmission (2111.6nm/1236.6nm)x35, ~ 80 sec interval • 211 Density ~ 3x1011...1.8.1 2b.1.9 High Resolution SEM Figure 2b.1.9.1 Y211/YBCO film on LAO (PV43D) At 77K and at 3T magnetic feild 0 0.2 0.4 0.6 0.8 1 1.2

  9. Influence of Sm2O3 microalloying and Yb contamination on Y211 particles coarsening and superconducting properties of IG YBCO bulk superconductors

    NASA Astrophysics Data System (ADS)

    Vojtkova, L.; Diko, P.; Kovac, J.; Vojtko, M.

    2018-06-01

    Single grain YBa2Cu3O7‑x (YBCO or Y123) bulk superconductors were produced by an infiltration growth process. The solid phase precursor was prepared by solid state synthesis from Y2O3 + BaCuO2 powders. The influence of the addition of Sm2O3 and YB contamination from the substrate on the microstructure and superconducting properties was analyzed. The dependences of Yb concentration on the distance from the bottom of the samples measured by energy dispersive spectroscopy microanalysis used in conjunction with scanning electron microscopy confirmed the contamination of the samples during the melting stage of the sample preparation. It is shown that the addition of Sm in low concentration and its combination with Yb from the substrate modify the coarsening of the Y211 particles as well as lead to the appearance of a secondary peak effect in the field dependences of the critical current density.

  10. Analyse de l'état mécanique et microstructural de films minces supraconducteurs YBa_2 Cu_3O_7 par diffraction des rayons X

    NASA Astrophysics Data System (ADS)

    Auzary, S.; Badawi, K. F.; Bimbault, L.; Rabier, J.; Gaboriaud, R. J.; Goudeau, Ph.

    1997-01-01

    Mechanical and microstructural analysis in a 100nm thin film is presented in this study. Using X-ray diffraction with a tensorial approach, we have determined stresses, strains, stress-free lattice parameters, microdistorsions and diffracting coherent domains size. Stress-free lattice parameters are higher than the bulk values. A high value of stresses is explained as a combination of coherent stresses, thermal stresses and intrinsic ones. Diffraction peaks line profiles analysis suggests grain boundaries presence as well as high lattice elastic microdistorsions. Cette étude présente une analyse de l'état mécanique et microstructurale dans un film mince de 100nm d'épaisseur d'YBCO déposé sur un substrat de MgO. En utilisant la diffraction des rayons X couplée à une approche tensorielle, nous avons déterminé les déformations, les contraintes, les paramètres libres de contraintes, les microdistorsions élastiques ainsi que la taille des domaines cohérents de diffraction. Les paramètres libres de contrainte sont supérieurs à ceux du massif. Une valeur élevée des contraintes est expliquée à partir des contraintes de cohérence, des contraintes thermiques et intrinsèques. L'analyse des profils des pics de diffraction suggère la présence de sous-joints et de distorsions élastiques élevées au niveau des mailles cristallographiques.

  11. Superconductor-Mediated Modification of Gravity? AC Motor Experiments with Bulk YBCO Disks in Rotating Magnetic Fields

    NASA Technical Reports Server (NTRS)

    Noever, David A.; Koczor, Ronald J.; Roberson, Rick

    1998-01-01

    We have previously reported results using a high precision gravimeter to probe local gravity changes in the neighborhood of large bulk-processed high-temperature superconductors. Podkietnov, et al (Podkietnov, E. and Nieminen, R. (1992) A Possibility of Gravitational Force Shielding by Bulk YBa2 Cu3 O7-x Superconductor, Physica C, C203:441-444.) have indicated that rotating AC fields play an essential role in their observed distortion of combined gravity and barometric pressure readings. We report experiments on large (15 cm diameter) bulk YBCO ceramic superconductors placed in the core of a three-phase, AC motor stator. The applied rotating field produces up to a 12,000 revolutions per minute magnetic field. The field intensity decays rapidly from the maximum at the outer diameter of the superconducting disk (less than 60 Gauss) to the center (less than 10 Gauss). This configuration was applied with and without a permanent DC magnetic field levitating the superconducting disk, with corresponding gravity readings indicating an apparent increase in observed gravity of less than 1 x 10(exp -6)/sq cm, measured above the superconductor. No effect of the rotating magnetic field or thermal environment on the gravimeter readings or on rotating the superconducting disk was noted within the high precision of the observation. Implications for propulsion initiatives and power storage flywheel technologies for high temperature superconductors will be discussed for various spacecraft and satellite applications.

  12. Metallorganic chemical vapor deposition and atomic layer deposition approaches for the growth of hafnium-based thin films from dialkylamide precursors for advanced CMOS gate stack applications

    NASA Astrophysics Data System (ADS)

    Consiglio, Steven P.

    To continue the rapid progress of the semiconductor industry as described by Moore's Law, the feasibility of new material systems for front end of the line (FEOL) process technologies needs to be investigated, since the currently employed polysilicon/SiO2-based transistor system is reaching its fundamental scaling limits. Revolutionary breakthroughs in complementary-metal-oxide-semiconductor (CMOS) technology were recently announced by Intel Corporation and International Business Machines Corporation (IBM), with both organizations revealing significant progress in the implementation of hafnium-based high-k dielectrics along with metal gates. This announcement was heralded by Gordon Moore as "...the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s." Accordingly, the study described herein focuses on the growth of Hf-based dielectrics and Hf-based metal gates using chemical vapor-based deposition methods, specifically metallorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). A family of Hf source complexes that has received much attention recently due to their desirable properties for implementation in wafer scale manufacturing is the Hf dialkylamide precursors. These precursors are room temperature liquids and possess sufficient volatility and desirable decomposition characteristics for both MOCVD and ALD processing. Another benefit of using these sources is the existence of chemically compatible Si dialkylamide sources as co-precursors for use in Hf silicate growth. The first part of this study investigates properties of MOCVD-deposited HfO2 and HfSixOy using dimethylamido Hf and Si precursor sources using a customized MOCVD reactor. The second part of this study involves a study of wet and dry surface pre-treatments for ALD growth of HfO2 using tetrakis(ethylmethylamido)hafnium in a wafer scale manufacturing environment. The third part of this study is an investigation of

  13. Electrical and magnetic properties of conductive Cu-based coated conductors

    NASA Astrophysics Data System (ADS)

    Aytug, T.; Paranthaman, M.; Thompson, J. R.; Goyal, A.; Rutter, N.; Zhai, H. Y.; Gapud, A. A.; Ijaduola, A. O.; Christen, D. K.

    2003-11-01

    The development of YBa2Cu3O7-δ (YBCO)-based coated conductors for electric power applications will require electrical and thermal stabilization of the high-temperature superconducting (HTS) coating. In addition, nonmagnetic tape substrates are an important factor in order to reduce the ferromagnetic hysteresis energy loss in ac applications. We report progress toward a conductive buffer layer architecture on biaxially textured nonmagnetic Cu tapes to electrically couple the HTS layer to the underlying metal substrate. A protective Ni overlayer, followed by a single buffer layer of La0.7Sr0.3MnO3, was employed to avoid Cu diffusion and to improve oxidation resistance of the substrate. Property characterizations of YBCO films on short prototype samples revealed self-field critical current density (Jc) values exceeding 2×106 A/cm2 at 77 K and good electrical connectivity. Magnetic hysteretic loss due to Ni overlayer was also investigated.

  14. Interactive modeling-synthesis-characterization approach towards controllable in situ self-assembly of artificial pinning centers in RE-123 films

    NASA Astrophysics Data System (ADS)

    Wu, Judy; Shi, Jack

    2017-10-01

    Raising critical current density J c in high temperature superconductors (HTSs) is an important strategy towards performance-cost balanced HTS technology for commercialization. The development of strong nanoscale artificial pinning centers (APCs) in HTS, such as YBa2Cu3O7 or RE-123 in general, represents one of the most exciting progressions in HTS material research in the last decade. Significantly raised J c has been demonstrated in APC/RE-123 nanocomposites by enhanced pinning on magnetic vortices in magnetic fields towards that demanded in practical applications. Among other processes, strain-mediated self-organization has been explored extensively for in situ formation of the APCs based on fundamental physics design rules. The desire in controlling the morphology, dimension, orientation, and concentration of APCs has led to a fundamental question on how strains interact in determining APCs at a macroscopic scale. Answering this question demands an interactive modeling-synthesis-characterization approach towards a thorough understanding of fundamental physics governing the strain-mediated self-organization of the APCs in the APC/RE-123 nanocomposites. Such an understanding is the key for a leap forward from the traditionally empirical method to materials-by-design to enable an optimal APC landscape to be achieved in epitaxial films of APC/YBCO nanocomposites under a precise guidance of fundamental physics. The paper intends to provide a review of recent progress made in the controllable generation of APCs using the interactive modeling-synthesis-characterization approach. The emphasis will be given to the understanding so far achieved using such an approach on the collective effect of the strain field on the morphology, dimension, and orientation of APCs in epitaxial APC/RE-123 nanocomposite films.

  15. Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yoo, Jinkyoung; Ahmed, Towfiq; Tang, Wei

    ZnO radial p–n junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. Here, we report on ZnO radial p–n junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted p-type doping approach. The p-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO.more » Ultraviolet and visible electroluminescence of ZnO radial p–n junction was demonstrated through a combination of position-controlled nano/microwire and crystalline p-type ZnO(P) radial shell growth on the wires. Lastly, the reported research opens a pathway of realisation of production-compatible ZnO p–n junction LEDs.« less

  16. Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition

    DOE PAGES

    Yoo, Jinkyoung; Ahmed, Towfiq; Tang, Wei; ...

    2017-09-05

    ZnO radial p–n junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. Here, we report on ZnO radial p–n junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted p-type doping approach. The p-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO.more » Ultraviolet and visible electroluminescence of ZnO radial p–n junction was demonstrated through a combination of position-controlled nano/microwire and crystalline p-type ZnO(P) radial shell growth on the wires. Lastly, the reported research opens a pathway of realisation of production-compatible ZnO p–n junction LEDs.« less

  17. Origin of photovoltaic effect in superconducting YBa2Cu3O6.96 ceramics

    PubMed Central

    Yang, F.; Han, M. Y.; Chang, F. G.

    2015-01-01

    We report remarkable photovoltaic effect in YBa2Cu3O6.96 (YBCO) ceramic between 50 and 300 K induced by blue-laser illumination, which is directly related to the superconductivity of YBCO and the YBCO-metallic electrode interface. There is a polarity reversal for the open circuit voltage Voc and short circuit current Isc when YBCO undergoes a transition from superconducting to resistive state. We show that there exists an electrical potential across the superconductor-normal metal interface, which provides the separation force for the photo-induced electron-hole pairs. This interface potential directs from YBCO to the metal electrode when YBCO is superconducting and switches to the opposite direction when YBCO becomes nonsuperconducting. The origin of the potential may be readily associated with the proximity effect at metal-superconductor interface when YBCO is superconducting and its value is estimated to be ~10–8 mV at 50 K with a laser intensity of 502 mW/cm2. Combination of a p-type material YBCO at normal state with an n-type material Ag-paste forms a quasi-pn junction which is responsible for the photovoltaic behavior of YBCO ceramics at high temperatures. Our findings may pave the way to new applications of photon-electronic devices and shed further light on the proximity effect at the superconductor-metal interface. PMID:26099727

  18. Black Films and Film-Makers.

    ERIC Educational Resources Information Center

    Patterson, Lindsay, Ed.

    The development of black films and the attitudes of the film industry toward black films and black actors are some of the topics examined in this anthology of essays. Section 1, "Nigger to Supernigger," contains such articles as "The Death of Rastus: Negroes in American Films" by Thomas R. Cripps and "Folk Values in a New Medium" by Alain Locke…

  19. Transport properties of YBa2Cu3Ox /La0.67Sr0.33MnO3 nanostrips and YBa2Cu3Ox/La0.67Sr0.33MnO3/YBa2Cu3Ox nanojunctions

    NASA Astrophysics Data System (ADS)

    Štrbík, V.; Beňačka, Š.; Gaži, Š.; Španková, M.; Šmatko, V.; Chromik, Š.; Gál, N.; Knoška, J.; Sojková, M.; Pisarčík, M.

    2016-03-01

    A metallic ferromagnet (F) in proximity with a superconductor (S) can transport supercurrent on a long distance through conversion of opposite-spin singlet Cooper pairs (CP) into equal-spin triplet CP (long range triplet component, LRTC), which are not broken by the exchange energy of F. The optimal conditions for the conversion are yet to be clarified; however, it is accepted that the key point to this process include high interface transparency and magnetic inhomogeneity at the SF interface. The aim of our paper is to study SF nanostrips (length of about 1500 nm and width down to 300 nm) and lateral SFS nanojunctions based on high critical temperature YBa2Cu3Ox (YBCO) and half-metallic La0.67Sr0.33MnO3 (LSMO) thin films. We applied a focused Ga+ ion beam (FIB) for patterning the SF nanostrips, as well as lateral SFS nanojunctions, by creating a slot in the nanostrip after removing the YBCO film in the slot along a length of about 200 nm. The temperature dependences of the samples resistance R(T) show critical temperature TCn ≈ 89 K of the SF nanostrips; however, the SFS nanojunctions at T < TCn show a residual resistance R < 100 Ω corresponding to a dirty LSMO (ρ≈ 10 mΩ cm) in the slot. The LRTC was not observed in our lateral SFS nanojunctions until now.

  20. Design and test of current limiting modules using YBCO-coated conductors

    NASA Astrophysics Data System (ADS)

    Schmidt, W.; Gamble, B.; Kraemer, H.-P.; Madura, D.; Otto, A.; Romanosky, W.

    2010-01-01

    Within the cooperation between American Superconductor Corporation (AMSC) and Siemens Corporate Technology we have investigated the fault current limiting performance of YBCO-coated conductors (also called second-generation or 2G HTS wires) stabilized with stainless steel laminates. Design rules for the length and width of the wire depending on utility grid requirements have been established. Bifilar coils have been manufactured and tested with a typical limitation period of 50 ms under stepwise increasing voltage loads to determine the maximum temperature the wires can withstand without degradation. Coils have been assembled into limiter modules demonstrating uniform tripping of the individual coils and recovery within seconds. At present this cooperation is proceeding within a joint project funded by the US Department of Energy (DOE) that encompasses the design, construction and testing of a 115 kV FCL for power transmission within a time frame of 4-5 years, and additional partners. Besides AMSC and Siemens, Nexans contributes the high voltage terminations and Los Alamos National Lab investigates the ac losses. Installation and testing are planned for a Southern California Edison substation. The module planned for the transmission voltage application consists of 63 horizontally arranged coils connected in parallel and series to account for a rated current of 1.2 kArms and voltage of 31 kVrms plus margins. The rated voltage of the module is considerably lower than the line to ground voltage in the 115 kV grid owing to our shunted limiter concept. The shunt reactor connected in parallel to the module outside the cryostat allows for adjustment of the limited current and reduces voltage drop across the module in case of a fault. The fault current reduction ratio is 42% for our present design. A subscale module comprising six full-size coils has been assembled and tested recently to validate the coil performance and coil winding technique. The module had a critical

  1. Visible Light Emitting Materials and Injection Devices

    DTIC Science & Technology

    1993-01-01

    view to preventing the occurrence of faceting in these films. (II) MOCVD growth of II-VI materials (Tim Anderson) (11.1) Growth of novel Zn ZCd SSeI ...E.J. Stofko and R.J, Paff, "Synthesis and some properties of BeTe, BeSe, and BeS", J, Phys, Chem. Soiid. 33 (1972) 501. 2. R. Yamamoto, M . Inoue, K...Technology," SID Seminar Lecture Notes, 1988, Vol. 1 7. R.M. Park, M ,B. Troffer, and C.M. Rouleau, "p-type ZnSe by nitrogen atom beam doping during molecular

  2. Architecture for coated conductors

    DOEpatents

    Foltyn, Stephen R.; Arendt, Paul N.; Wang, Haiyan; Stan, Liliana

    2010-06-01

    Articles are provided including a base substrate having a layer of an oriented cubic oxide material with a rock-salt-like structure layer thereon, and, a layer of epitaxial titanium nitride upon the layer of an oriented cubic oxide material having a rock-salt-like structure. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of epitaxial titanium nitride or upon a intermediate buffer layer upon the layer of epitaxial titanium nitride.

  3. High rate buffer layer for IBAD MgO coated conductors

    DOEpatents

    Foltyn, Stephen R [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM; Arendt, Paul N [Los Alamos, NM

    2007-08-21

    Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.

  4. High Tc superconducting bolometric and nonbolometric infrared (IR) detectors

    NASA Technical Reports Server (NTRS)

    Lakeou, Samuel

    1995-01-01

    Activities carried out during the reporting period are summarized. The workplan for the period August 1994 to August 1995 included the following: (1) expansion of the Applied Superconductivity Laboratory to include stand-alone optical response and noise measurement setups; (2) study the low frequency excess electrical noise in YBCO films; and (3) enhancement of the academic support component of the project through increased student and faculty participation. Abstracts of papers submitted for publication during this reporting period are included as attachments.

  5. Impact of photoluminescence temperature and growth parameter on the exciton localized in BxGa1-xAs/GaAs epilayers grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Hidouri, Tarek; Saidi, Faouzi; Maaref, Hassen; Rodriguez, Philippe; Auvray, Laurent

    2016-10-01

    In this work, BxGa1-xAs/GaAs epilayers with three different boron compositions were elaborated by metal organic chemical vapor deposition (MOCVD) on GaAs (001) substrate. Structural study using High resolution X-ray diffraction (HRXRD) spectroscopy and Atomic Force Microscopy (AFM) have been used to estimate the boron fraction. The luminescence keys were carried out as functions of temperature in the range 10-300 K, by the techniques of photoluminescence (PL). The low PL temperature has shown an abnormal emission appeared at low energy side witch attributed to the recombination through the deep levels. In all samples, the PL peak energy and the full width at half maximum (FWHM), present an anomalous behavior as a result of the competition process between localized and delocalized carriers. We propose the Localized-state Ensemble model to explain the unusual photoluminescence behaviors. Electrical carriers generation, thermal escape, recapture, radiative and non-radiative lifetime are taken into account. The temperature-dependent photoluminescence measurements were found to be in reasonable agreement with the model of localized states. We controlled the evolution of such parameters versus composition by varying the V/III ratio to have a quantitative and qualitative understanding of the recombination mechanisms. At high temperature, the model can be approximated to the band-tail-state emission.

  6. Advanced transition metal phosphide materials from single-source molecular precursors

    NASA Astrophysics Data System (ADS)

    Colson, Adam Caleb

    In this thesis, the feasibility of employing organometallic single-source precursors in the preparation of advanced transition metal pnictide materials such as colloidal nanoparticles and films has been investigated. In particular, the ternary FeMnP phase was targeted as a model for preparing advanced heterobimetallic phosphide materials, and the iron-rich Fe3P phase was targeted due to its favorable ferromagnetic properties as well as the fact that the preparation of advanced Fe3P materials has been elusive by commonly used methods. Progress towards the synthesis of advanced Fe2--xMn xP nanomaterials and films was facilitated by the synthesis of the novel heterobimetallic complexes FeMn(CO)8(mu-PR1R 2) (R1 = H, R2 = H or R1 = H, R2 = Ph), which contain the relatively rare mu-PH2 and mu-PPhH functionalities. Iron rich Fe2--xMnxP nanoparticles were obtained by thermal decomposition of FeMn(CO)8(mu-PH 2) using solution-based synthetic methods, and empirical evidence suggested that oleic acid was responsible for manganese depletion. Films containing Fe, Mn, and P with the desired stoichiometric ratio of 1:1:1 were prepared using FeMn(CO)8(mu-PH2) in a simple low-pressure metal-organic chemical vapor deposition (MOCVD) apparatus. Although the elemental composition of the precursor was conserved in the deposited film material, spectroscopic evidence indicated that the films were not composed of pure-phase FeMnP, but were actually mixtures of crystalline FeMnP and amorphous FeP and Mn xOy. A new method for the preparation of phase-pure ferromagnetic Fe 3P films on quartz substrates has also been developed. This approach involved the thermal decomposition of the single-source precursors H 2Fe3(CO)9PR (R = tBu or Ph) at 400 °C. The films were deposited using a simple home-built MOCVD apparatus and were characterized using a variety of analytical methods. The films exhibited excellent phase purity, as evidenced by X-ray diffraction, X-ray photoelectron spectroscopy, and

  7. Current status and future prospects of Japanese national project on coated conductor development and its applications

    NASA Astrophysics Data System (ADS)

    Shiohara, Y.; Yoshizumi, M.; Izumi, T.; Yamada, Y.

    2008-09-01

    Four years of the current five-year national project since 2003 for development of coated conductors using Y-system superconductors have passed and lots of remarkable results have been achieved. In this paper, the current status and the future prospect of this project are reviewed. The current national project comprises several groups of national laboratories, universities and private companies. The group of high performance tape development, consisting of Fujikura and SRL-NCCC, has worked on the tape by PLD-REBCO superconducting tapes on the PLD-CeO 2/IBAD-GZO buffered substrates. The high product of Ic and L equal to 112,166 A m was achieved in the 368 m-304.8 A GdBCO tape whose Ic value is mostly above 350 A/cm-w. The performance under the magnetic fields was also improved up to 42 A at 3 T in a GdBCO short film with doping of ZrO 2. About 61 m long GdBCO tape with ZrO 2 doping showed a high Ic value of 220 A at self field and 30 A at 3 T. On the other hand, the other group focusing on the low production cost has worked on processes of TFA-MOD and MOCVD, etc. The extremely high Ic value of 735 A/cm-w was attained in the TFA-MOD films on PLD-CeO 2/IBAD-GZO/Hastelloy C276 substrate by means of using the effect of Ba-poor nominal composition. In the efforts for long tape production, 200 m long tapes with high Ic values of 200 A/cm-w and 205 A/cm-w were obtained by MOD-YBCO/PLD-CeO 2/IBAD-GZO/Hastelloy C276 and PLD-HoBCO on buffered NiW substrate, respectively. The Ic × L value of the MOD-derived tape was 40,000 A m, which is the highest value in the world by the MOD process. Based on the above achievements on the coated conductor process development, two new additional goals were set in the project. One is the development for the extremely low cost tape and another is the development of the basic technologies for making the electric power devices including cables, transformers, motors, current-limiters and cryocoolers. Some of the new themes already revealed the

  8. Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD

    NASA Astrophysics Data System (ADS)

    Kakkerla, Ramesh Kumar; Anandan, Deepak; Hsiao, Chih-Jen; Yu, Hung Wei; Singh, Sankalp Kumar; Chang, Edward Yi

    2018-05-01

    We demonstrate the growth of vertically aligned Au-free InAs and InAs/GaSb heterostructure nanowires on Si (1 1 1) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on the morphology and growth rate of the InAs and InAs/GaSb heterostructure nanowires (NWs) is investigated. Control over diameter and length of the InAs NWs and the GaSb shell thickness was achieved by using growth temperature. As the GaSb growth temperature increase, GaSb radial growth rate increases due to the increase in alkyl decomposition at the substrate surface. Diffusivity of the adatoms increases as the GaSb growth temperature increase which results in tapered GaSb shell growth. Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) measurements revealed that the morphology and shell thickness can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the InAs NW core can be controlled by the growth temperature. This study demonstrates the control over InAs NWs growth and the GaSb shell thickness can be achieved through proper growth temperature control, such technique is essential for the growth of nanowire for future nano electronic devices, such as Tunnel FET.

  9. Quasiparticle properties at microwave frequencies in the underdoped YBa2Cu3O7-δ thin films

    NASA Astrophysics Data System (ADS)

    Hsing, Lai

    2004-03-01

    Microstrip ring resonators with quality factor (Q) over 10^4 at temperature 5 K were fabricated using the double-side YBa_2Cu_3O_7-δ (YBCO) films deposited on LaAlO3 (LAO) substrates. By placing a narrow gap in the ring resonator, the original fundamental resonating mode (3.61 GHz) splits into two modes (1.80 GHz and 5.33 GHz) with distinct resonating frequencies. The samples allow us to determine the temperature and the frequency dependences of penetration depth and microwave conductivity for various underdoped-cuprates by using Drude formula and the modified two-fluid model. The natures of the order parameter of high-Tc superconductivity in the underdoped cases are shown to be of d-wave type in an exact manner. In particular, the Fermi-liquid correction factor α ^2 and the vertex correction factor β from the model, proposed by Wen and Lee, can be estimated that α ^2 is doping independent in the underdoped regime and β decreases as oxygen content is decreasing in our experiment data. All these results are independent of frequencies as well. The results reveal that the interaction between quasiparticles is insensitive dependence of the impurity concentrations due to oxygen deficiency on the CuO chain and the impurity potential for forward scattering approaches the same as back scattering with more oxygen deficiency.

  10. Measurement of second order susceptibilities of GaN and AlGaN

    NASA Astrophysics Data System (ADS)

    Sanford, N. A.; Davydov, A. V.; Tsvetkov, D. V.; Dmitriev, A. V.; Keller, S.; Mishra, U. K.; DenBaars, S. P.; Park, S. S.; Han, J. Y.; Molnar, R. J.

    2005-03-01

    Rotational Maker fringes, scaled with respect to χ11(2) of crystalline quartz, were used to determine the second order susceptibilities χ31(2) and χ33(2) for samples of thin AlxGa1-xN films, a thicker GaN film, and a free-standing GaN platelets. The pump wavelength was 1064nm. The AlxGa1-xN samples, ranging in thickness from roughly 0.5to4.4μm, were grown by metalorganic chemical vapor deposition (MOCVD) and hydride vapor-phase epitaxy (HVPE) on (0001) sapphire substrates. The Al mole fractions x were 0, 0.419, 0.507, 0.618, 0.660, and 0.666, for the MOCVD-grown samples, and x =0, 0.279, 0.363, and 0.593 for the HVPE-grown samples. An additional HVPE-grown GaN sample ˜70μm thick was also examined. The free-standing bulk GaN platelets consisted of an HVPE grown film ˜226μm thick removed from its growth substrate, and a crystal ˜160μm thick grown by high-pressure techniques. For the AlxGa1-xN samples, the magnitudes of χ31(2) and χ33(2) decrease roughly linearly with increasing x and extrapolate to ˜0 for x =1. Furthermore, the constraint expected for a perfect wurtzite structure, namely χ33(2)=-2χ31(2), was seldom observed, and the samples with x =0.660 and x =0.666 showed χ31(2) and χ33(2) having the same sign. These results are consistent with the theoretical studies of nonlinear susceptibilities for AlN and GaN performed by Chen et al. [Appl. Phys. Lett. 66, 1129 (1995)]. The thicker bulk GaN samples displayed a complex superposition of high- and low-frequency Maker fringes due to the multiple-pass interference of the pump and second-harmonic generation beams, and the nonlinear coefficients were approximately consistent with those measured for the thin-film GaN sample.

  11. Strong Field Quenching of the Quasiparticle Effective Mass in Heavy Fermion Compound YbCo2Zn20

    NASA Astrophysics Data System (ADS)

    Masahiro Ohya,; Masaki Matsushita,; Shingo Yoshiuchi,; Tetsuya Takeuchi,; Fuminori Honda,; Rikio Settai,; Toshiki Tanaka,; Yasunori Kubo,; Yoshichika Ōnuki,

    2010-08-01

    We found a metamagnetic like anomaly at Hm≃ 5 kOe in a heavy fermion compound YbCo2Zn20 below the characteristic temperature Tχ_{max}=0.32 K where the ac-susceptibility shows a broad peak, suggesting that an electronic state with a very low Kondo temperature is realized. Interestingly, the metamagnetic like behavior was observed as two peaks at 4.0 and 7.5 kOe at 95 mK in the magnetic field dependence of the electronic specific heat C/T. The extremely large values of the electronic specific heat coefficient γ≃ 8000 mJ/(K2\\cdotmol) and A=160 μΩ\\cdotcm/K2 in the electrical resistivity ρ=ρ0+AT2 at H=0 kOe are most likely due to the very low Kondo temperature. The \\sqrt{A} value was, however, found to be strongly reduced from \\sqrt{A}=12.6 (μΩ\\cdotcm/K2)1/2 at 0 kOe to 0.145 (μΩ\\cdotcm/K2)1/2 at 150 kOe. Therefore, we considered that the corresponding cyclotron effective mass mc*, which was determined from the temperature dependence of the de Haas-van Alphen (dHvA) amplitude, is also reduced with increasing magnetic field and is in fact not large, ranging from 2 to 9m0 at 117 kOe. From the field dependence of \\sqrt{A} and mc*, we estimated the cyclotron effective mass at 0 kOe to be 100--500m0, revealing the largest cyclotron mass as far as we know.

  12. Influence of film dimensions on film droplet formation.

    PubMed

    Holmgren, Helene; Ljungström, Evert

    2012-02-01

    Aerosol particles may be generated from rupturing liquid films through a droplet formation mechanism. The present work was undertaken with the aim to throw some light on the influence of film dimensions on droplet formation with possible consequences for exhaled breath aerosol formation. The film droplet formation process was mimicked by using a purpose-built device, where fluid films were spanned across holes of known diameters. As the films burst, droplets were formed and the number and size distributions of the resulting droplets were determined. No general relation could be found between hole diameter and the number of droplets generated per unit surface area of fluid film. Averaged over all film sizes, a higher surface tension yielded higher concentrations of droplets. Surface tension did not influence the resulting droplet diameter, but it was found that smaller films generated smaller droplets. This study shows that small fluid films generate droplets as efficiently as large films, and that droplets may well be generated from films with diameters below 1 mm. This has implications for the formation of film droplets from reopening of closed airways because human terminal bronchioles are of similar dimensions. Thus, the results provide support for the earlier proposed mechanism where reopening of closed airways is one origin of exhaled particles.

  13. Observation of a three-dimensional quasi-long-range electronic supermodulation in YBa 2Cu 3O 7-x/La 0.7Ca 0.3MnO 3 heterostructures

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    He, Junfeng; Shafer, Padraic; Mion, Thomas R.

    Recent developments in high-temperature superconductivity highlight a generic tendency of the cuprates to develop competing electronic (charge) supermodulations. While coupled with the lattice and showing different characteristics in different materials, these supermodulations themselves are generally conceived to be quasi-two-dimensional, residing mainly in individual CuO 2 planes, and poorly correlated along the c axis. Here we observed with resonant elastic X-ray scattering a distinct type of electronic supermodulation in YBa 2Cu 3O 7–x (YBCO) thin films grown epitaxially on La 0.7Ca 0.3MnO 3 (LCMO). This supermodulation has a periodicity nearly commensurate with four lattice constants in-plane, eight out of plane, withmore » long correlation lengths in three dimensions. It sets in far above the superconducting transition temperature and competes with superconductivity below this temperature for electronic states predominantly in the CuO 2 plane. Our finding sheds light on the nature of charge ordering in cuprates as well as a reported long-range proximity effect between superconductivity and ferromagnetism in YBCO/LCMO heterostructures.« less

  14. Effect of Load-Induced Oxygen Absorption in YBa2Cu3O6 + x on Mechanical Properties of the "Polyimide-YBa2Cu3O6 + x " System

    NASA Astrophysics Data System (ADS)

    Muradov, A. D.; Kyrykbaeva, A. A.

    2018-05-01

    We have studied the effect of oxygen absorption by disperse powder fillers made of high-temperature superconductor YBa2Cu3O6 + x (YBCO) with concentrations of 0.05, 0.1, and 0.5 mass % on mechanical properties of polyimide composite materials (PCMs) in the form of films. It has been established that an adsorption boundary layer consisting of an aggregate of several transition layers with a varying structure is formed between filler particles and the matrix. A sharp increase in relative elongation (strain) Δɛ c , which is observed for a PCM with YBCO fillers in the form of a jump in the region of loads of 40-47 MPa, is due to the fact that the bonds between the matrix macromolecules and the molecules in the vicinity of the upper boundary layer are ruptured, leading to a strain jump. An increase in the filler concentration increases the rigidity of the bonds between macromolecules in the boundary layers, leads to a shift of Δɛ c to the region of low stresses, and reduces its value.

  15. Observation of a three-dimensional quasi-long-range electronic supermodulation in YBa 2Cu 3O 7-x/La 0.7Ca 0.3MnO 3 heterostructures

    DOE PAGES

    He, Junfeng; Shafer, Padraic; Mion, Thomas R.; ...

    2016-03-01

    Recent developments in high-temperature superconductivity highlight a generic tendency of the cuprates to develop competing electronic (charge) supermodulations. While coupled with the lattice and showing different characteristics in different materials, these supermodulations themselves are generally conceived to be quasi-two-dimensional, residing mainly in individual CuO 2 planes, and poorly correlated along the c axis. Here we observed with resonant elastic X-ray scattering a distinct type of electronic supermodulation in YBa 2Cu 3O 7–x (YBCO) thin films grown epitaxially on La 0.7Ca 0.3MnO 3 (LCMO). This supermodulation has a periodicity nearly commensurate with four lattice constants in-plane, eight out of plane, withmore » long correlation lengths in three dimensions. It sets in far above the superconducting transition temperature and competes with superconductivity below this temperature for electronic states predominantly in the CuO 2 plane. Our finding sheds light on the nature of charge ordering in cuprates as well as a reported long-range proximity effect between superconductivity and ferromagnetism in YBCO/LCMO heterostructures.« less

  16. Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Anderson, T.

    This report describes research performed by the University of Florida during Phase 2 of this subcontract. First, to study CIGS, researchers adapted a contactless, nondestructive technique previously developed for measuring photogenerated excess carrier lifetimes in SOI wafers. This dual-beam optical modulation (DBOM) technique was used to investigate the differences between three alternative methods of depositing CdS (conventional chemical-bath deposition [CBD], metal-organic chemical vapor deposition [MOCVD], and sputtering). Second, a critical assessment of the Cu-In-Se thermochemical and phase diagram data using standard CALPHAD procedures is being performed. The outcome of this research will produce useful information on equilibrium vapor compositions (requiredmore » annealing ambients, Sex fluxes from effusion cells), phase diagrams (conditions for melt-assisted growth), chemical potentials (driving forces for diffusion and chemical reactions), and consistent solution models (extents of solid solutions and extending phase diagrams). Third, an integrated facility to fabricate CIS PV devices was established that includes migration-enhanced epitaxy (MEE) for deposition of CIS, a rapid thermal processing furnace for absorber film formation, sputtering of ZnO, CBD or MOCVD of CdS, metallization, and pattern definition.« less

  17. Effect of template post-annealing on Y(Dy)BaCuO nucleation on CeO2 buffered metallic tapes

    NASA Astrophysics Data System (ADS)

    Hu, Xuefeng; Zhong, Yun; Zhong, Huaxiao; Fan, Feng; Sang, Lina; Li, Mengyao; Fang, Qiang; Zheng, Jiahui; Song, Haoyu; Lu, Yuming; Liu, Zhiyong; Bai, Chuanyi; Guo, Yanqun; Cai, Chuanbing

    2017-08-01

    Substrate engineering is very significant in the synthesis of the high-temperature superconductor (HTS) coated conductor. Here we design and synthesize several distinct and stable Cerium oxide (CeO2) surface reconstructions which are used to grow epitaxial films of the HTS YBa2Cu3O7-δ (YBCO). To identify the influence of annealing and post-annealing surroundings on the nature of nucleation centers, including Ar/5%H2, humid Ar/5%H2 and O2 in high temperature annealing process, we study the well-controlled structure, surface morphology, crystal constants and surface redox processes of the ceria buffers by using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and field-emission scanning electronic microscopy (FE-SEM), respectively. The ceria film post-annealed under humid Ar/5%H2 gas shows the best buffer layer properties. Furthermore, the film absorbs more oxygen ions, which appears to contribute to oxygenation of superconductor film. The film is well-suited for ceria model studies as well as a perfect substitute for CeO2 bulk material.

  18. Microwave Hybrid Integrated Circuit Applicatins of High Transition Temperature Superconductor

    NASA Astrophysics Data System (ADS)

    Lu, Shih-Lin

    This research work involves microwave characterization of high Tc superconducting (HTS) thin film using microstrip ring resonators, studying the nonlinear properties of HTS thin film transmission lines using two-tone intermodulation technique, coupling mechanisms and coupling factors of microstrip ring resonators side coupled to a microstrip line, two-port S-parameters measurements of GaAs MESFET at low temperature, and the design and implementation of hybrid ring resonator stabilized microwave oscillator using both metal films and superconducting films. A microstrip ring resonators operating at 10 GHz have been fabricated from YBCO HTS thin films deposited on one side of LaAl_2O_3 substrates. Below 60^circ Kelvin the measured unloaded Q of the HTS thin film microstrip ring resonators are more than 1.5 times that of gold film resonators. The two distinct but very close resonance peaks of a ring resonator side coupled to a microstrip line are experimentally identified as due to odd-mode and even-mode coupling. These two mechanisms have different characteristic equivalent circuit models and lead to different coupling coefficients and loaded resonance frequencies. The coupling factors for the two coupling modes are calculated using piecewise coupled line approximations. The two-port S-parameters measurement techniques and GaAs MESFET low temperature DC and microwave characteristics have been investigated. A system errors model including the errors caused by the line constriction at low temperature has been proposed and a temperature errors correction procedure has been developed for the two-port microwave S-parameters measurements at low temperature. The measured GaAs MESFET DC characteristics shows a 20% increase in transconductance at 77^circ K. There is also a 2 db increase in /S21/ at 77^circ K. The microwave oscillator stabilized with both metal and HTS thin film ring resonators have been studied. The tuning ability of the oscillator by a varactor diode has also

  19. Film Program Notes from the Current Holdings of the Anthology Film Archives; Outlines of 41 Films.

    ERIC Educational Resources Information Center

    Anthology Film Archives, New York, NY.

    This collection of film program notes includes mixed commentary on some of the films held in the Anthology Film Archives (a film and book library in New York City). Some of the films are described by synopsis of the episodes and others by translation into English of the foreign language subtitles. However, each film noted is identified by full…

  20. Metalorganic chemical vapor deposition and characterization of ZnO materials

    NASA Astrophysics Data System (ADS)

    Sun, Shangzu; Tompa, Gary S.; Hoerman, Brent; Look, David C.; Claflin, Bruce B.; Rice, Catherine E.; Masaun, Puneet

    2006-04-01

    Zinc oxide is attracting growing interest for potential applications in electronics, optoelectronics, photonics, and chemical and biochemical sensing, among other applications. We report herein our efforts in the growth and characterization of p- and n-type ZnO materials by metalorganic chemical vapor deposition (MOCVD), focusing on recent nitrogen-doped films grown using diethyl zinc as the zinc precursor and nitric oxide (NO) as the dopant. Characterization results, including resistivity, Hall measurements, photoluminescence, and SIMS, are reported and discussed. Electrical behavior was observed to be dependent on illumination, atmosphere, and heat treatment, especially for p-type material.

  1. The National Film Registry: Acquiring Our Film Heritage.

    ERIC Educational Resources Information Center

    Ziegler, Roy A.

    The National Film Registry, which is primarily a designated list of films to be preserved by the Library of Congress, is also a valuable tool for selecting "films that are culturally, historically, and aesthetically significant." Following a brief discussion of the history and selection process of the National Film Registry, Southeast…

  2. The Dirac Experiments - Results and Challenges

    NASA Astrophysics Data System (ADS)

    Clark, R. G.; O'Brien, J. L.; Dzurak, A. S.; Kane, B. E.; Lumpkin, N. E.; Reilley, D. J.; Starrett, R. P.; Rickel, D. G.; Goettee, J. D.; Campbell, L. J.; Fowler, C. M.; Mielke, C.; Harrison, N.; Zerwekh, W. D.; Clark, D.; Bartram, B. D.; King, J. C.; Parkin, D.; Nakagawa, H.; Miura, N.

    2004-11-01

    The 1997 international Dirac II Series held at Los Alamos National Laboratory involved low temperature electrical transport and optical experiments in magnetic fields exceeding 800 T, produced by explosive flux compression using Russian MC-1 generators. An overview of the scientific and technical advances achieved in this Series is given, together with a strategy for future work in this challenging experimental environment. A significant outcome was achieved in transport studies of microfabricated thin-film YBCO structures with the magnetic field in the CuO plane. Using a GHz transmission line technique at an ambient temperature of 1.6 K, an onset of dissipation was observed at 150 T (a new upper bound for superconductivity in any material), with a saturation of resistivity at 240 T. Comparison with the Pauli limit expected at B - 155 T in this material suggests that the critical field in this geometry is limited by spin paramagnetism. In preparation for a Dirac III series, a systematic temperature-dependent transport study of YBCO using in-plane magnetic fields of 150 T generated by single-turn coils, at temperatures over the range 10-100 K, has been undertaken in collaboration with the Japanese Megagauss Laboratory. The objective is to map out the phase diagram for this geometry, which is expected to be significantly different than the Werthamer-Helfand-Hohenberg model due to the presence of paramagnetic limiting. Nanofabricated magnetometers have also been developed in a UNSW-LANL collaboration for use in Dirac III for Fermi surface measurements of YBCO in megagauss fields, which are described.

  3. Film Reviews.

    ERIC Educational Resources Information Center

    Lance, Larry M.; Atwater, Lynn

    1987-01-01

    Reviews four Human Sexuality films and videos. These are: "Personal Decisions" (Planned Parenthood Federation of America, 1985); "The Touch Film" (Sterling Production, 1986); "Rethinking Rape" (Film Distribution Center, 1985); "Not A Love Story" (National Film Board of Canada, 1981). (AEM)

  4. Film and membrane-model thermodynamics of free thin liquid films.

    PubMed

    Radke, C J

    2015-07-01

    In spite of over 7 decades of effort, the thermodynamics of thin free liquid films (as in emulsions and foams) lacks clarity. Following a brief review of the meaning and measurement of thin-film forces (i.e., conjoining/disjoining pressures), we offer a consistent analysis of thin-film thermodynamics. By carefully defining film reversible work, two distinct thermodynamic formalisms emerge: a film model with two zero-volume membranes each of film tension γ(f) and a membrane model with a single zero-volume membrane of membrane tension 2γ(m). In both models, detailed thermodynamic analysis gives rise to thin-film Gibbs adsorption equations that allow calculation of film and membrane tensions from measurements of disjoining-pressure isotherms. A modified Young-Laplace equation arises in the film model to calculate film-thickness profiles from the film center to the surrounding bulk meniscus. No corresponding relation exists in the membrane model. Illustrative calculations of disjoining-pressure isotherms for water are presented using square-gradient theory. We report considerable deviations from Hamaker theory for films less than about 3 nm in thickness. Such thin films are considerably more attractive than in classical Hamaker theory. Available molecular simulations reinforce this finding. Copyright © 2014 Elsevier Inc. All rights reserved.

  5. Single-layer nano-carbon film, diamond film, and diamond/nano-carbon composite film field emission performance comparison

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wang, Xiaoping, E-mail: wxpchina64@aliyun.com, E-mail: wxpchina@sohu.com; Shanghai Key Laboratory of Modern Optical System, Shanghai 200093; Wang, Jinye

    A series of single-layer nano-carbon (SNC) films, diamond films, and diamond/nano-carbon (D/NC) composite films have been prepared on the highly doped silicon substrate by using microwave plasma chemical vapor deposition techniques. The films were characterised by scanning electron microscopy, Raman spectroscopy, and field emission I-V measurements. The experimental results indicated that the field emission maximum current density of D/NC composite films is 11.8–17.8 times that of diamond films. And the field emission current density of D/NC composite films is 2.9–5 times that of SNC films at an electric field of 3.0 V/μm. At the same time, the D/NC composite film exhibitsmore » the advantage of improved reproducibility and long term stability (both of the nano-carbon film within the D/NC composite cathode and the SNC cathode were prepared under the same experimental conditions). And for the D/NC composite sample, a high current density of 10 mA/cm{sup 2} at an electric field of 3.0 V/μm was obtained. Diamond layer can effectively improve the field emission characteristics of nano-carbon film. The reason may be due to the diamond film acts as the electron acceleration layer.« less

  6. Methods and systems for fabricating high quality superconducting tapes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Majkic, Goran; Selvamanickam, Venkat

    An MOCVD system fabricates high quality superconductor tapes with variable thicknesses. The MOCVD system can include a gas flow chamber between two parallel channels in a housing. A substrate tape is heated and then passed through the MOCVD housing such that the gas flow is perpendicular to the tape's surface. Precursors are injected into the gas flow for deposition on the substrate tape. In this way, superconductor tapes can be fabricated with variable thicknesses, uniform precursor deposition, and high critical current densities.

  7. Film and History.

    ERIC Educational Resources Information Center

    Schaber, Robin L.

    2002-01-01

    Provides an annotated bibliography of Web sites that focus on using film to teach history. Includes Web sites in five areas: (1) film and education; (2) history of cinema; (3) film and history resources; (4) film and women; and (5) film organizations. (CMK)

  8. Drop dynamics on a thin film: Thin film rupture

    NASA Astrophysics Data System (ADS)

    Carlson, Andreas; Kim, Pilnam; Stone, Howard A.

    2011-11-01

    The spreading of a water drop on an oil film that covers a solid substrate is a common event in many industrial processes. We study in experiments the dynamics of a water drop on a thin silicone oil film and quantify its interaction with the solid substrate that supports the film. The oil film becomes unstable and ruptures for solids that are hydrophilic. We determine the ``waiting time,'' the time it takes the water drop to drain the silicone film. This timescale is found to highly depend on how well water wets the solid, illustrating the interplay between intermolecular and hydrodynamic forces in the phenomenon. A phase diagram for the thin film stability is extracted based on waters equilibrium contact angle on the solid, which shows that we can either promote or inhibit de-wetting. As water comes in direct contact with the solid, it spreads and peels off the silicone film. We show the influence of viscosity, equilibrium contact angle and film height on the opening radius of the hole formed as the solid de-wets.

  9. Proximity effects across oxide-interfaces of superconductor-insulator-ferromagnet hybrid heterostructure.

    PubMed

    Prajapat, C L; Singh, Surendra; Bhattacharya, D; Ravikumar, G; Basu, S; Mattauch, S; Zheng, Jian-Guo; Aoki, T; Paul, Amitesh

    2018-02-27

    A case study of electron tunneling or charge-transfer-driven orbital ordering in superconductor (SC)-ferromagnet (FM) interfaces has been conducted in heteroepitaxial YBa 2 Cu 3 O 7 (YBCO)/La 0.67 Sr 0.33 MnO 3 (LSMO) multilayers interleaved with and without an insulating SrTiO 3 (STO) layer between YBCO and LSMO. X-ray magnetic circular dichroism experiments revealed anti-parallel alignment of Mn magnetic moments and induced Cu magnetic moments in a YBCO/LSMO multilayer. As compared to an isolated LSMO layer, the YBCO/LSMO multilayer displayed a (50%) weaker Mn magnetic signal, which is related to the usual proximity effect. It was a surprise that a similar proximity effect was also observed in a YBCO/STO/LSMO multilayer, however, the Mn signal was reduced by 20%. This reduced magnetic moment of Mn was further verified by depth sensitive polarized neutron reflectivity. Electron energy loss spectroscopy experiment showed the evidence of Ti magnetic polarization at the interfaces of the YBCO/STO/LSMO multilayer. This crossover magnetization is due to a transfer of interface electrons that migrate from Ti (4+)-δ to Mn at the STO/LSMO interface and to Cu 2+ at the STO/YBCO interface, with hybridization via O 2p orbitals. So charge-transfer driven orbital ordering is the mechanism responsible for the observed proximity effect and Mn-Cu anti-parallel coupling in YBCO/STO/LSMO. This work provides an effective pathway in understanding the aspect of long range proximity effect and consequent orbital degeneracy parameter in magnetic coupling.

  10. Progress in second-generation HTS wire development and manufacturing

    NASA Astrophysics Data System (ADS)

    Selvamanickam, V.; Chen, Y.; Xiong, X.; Xie, Y.; Zhang, X.; Rar, A.; Martchevskii, M.; Schmidt, R.; Lenseth, K.; Herrin, J.

    2008-09-01

    2007 has marked yet another year of continued rapid progress in developing and manufacturing high-performance, long-length second-generation (2G) HTS wires at high speeds. Using ion beam assisted deposition (IBAD) MgO and associated buffer sputtering processes, SuperPower has now exceeded piece lengths of 1000 m of fully buffered tape reproducibly with excellent in-plane texture of 6-7 degrees and uniformity of about 2%. These kilometer lengths are produced at high speeds of about 350 m/h of 4 mm wide tape. In combination with metal organic chemical vapor deposition (MOCVD), 2G wires up to single piece lengths to 790 m with a minimum critical current value of 190 A/cm corresponding to a Critical current × Length performance of 150,100 Am have been achieved. Tape speeds up to 180 m/h have been reached MOCVD while maintaining critical currents above 200 A/cm in 100+ m lengths. Thick film MOCVD technology has been transitioned to Pilot manufacturing system where a minimum critical current of 320 A/cm has been demonstrated over a length of 155 m processed at a speed of 70 m/h in 4 mm width. Finally, nearly 10,000 m of 2G wire has been produced, exhaustively tested, and delivered to the Albany Cable project. The average minimum critical current of the wire delivered in 225 segments of 43-44 m is 70 A in 4 mm widths. A 30 m cable has been fabricated with this wire by Sumitomo Electric and has been installed in the power grid of National Grid in downtown Albany and is the world’s first 2G device installed in the grid.

  11. Contemporary Films' Mini Course on Film Study.

    ERIC Educational Resources Information Center

    Schillaci, Peter

    This minicourse on film study can be a unit in English, in arts, or in the humanities. It can help to launch a film study course or complement an introduction to theater. Whatever form it takes, it helps to build a bridge to the student's media environment. Part one, the language of images, utilizes four films which demonstrate the basic elements…

  12. Microwave-assisted synthesis and critical analysis for YBa2Cu3O6+δ nanoparticles

    NASA Astrophysics Data System (ADS)

    Chhaganlal Gandhi, Ashish; Lin, Jauyn Grace

    2018-05-01

    A new cost effective scheme of a microwave-assisted sol–gel route followed by a short annealing time is proposed to synthesize YBCO nanoparticles (NPs) of various sizes. The advanced techniques of synchrotron radiation x-ray diffraction (SRXRD) and electron spin resonance (ESR) are used to analyze the size effects on their magnetic/superconducting properties. The major interesting finding is that the size of YBCO NPs could confine the amount of oxygen content and consequently change the superconducting transition temperature (T C ) of YBCO NPs. The ESR result demonstrates a sensitive probe to characterize surface defects in the oxygen-deficient YBCO NPs.

  13. A 10 GHz Y-Ba-Cu-O/GaAs hybrid oscillator proximity coupled to a circular microstrip patch antenna

    NASA Technical Reports Server (NTRS)

    Rohrer, Norman J.; Richard, M. A.; Valco, George J.; Bhasin, Kul B.

    1993-01-01

    A 10 GHz hybrid YBCO/GaAs microwave oscillator proximity coupled to a circular microstrip antenna has been designed, fabricated, and characterized. The oscillator was a reflection mode type using a GaAs MESFET as the active element. The feedline, transmission lines, RF chokes, and bias lines were all fabricated from YBCO superconducting thin films on a 1 cm x 1 cm lanthanum aluminate substrate. The output feedline of the oscillator was wire bonded to a superconducting feedline on a second 1 cm x 1 cm lanthanum aluminate substrate, which was in turn proximity coupled to a circular microstrip patch antenna. Antenna patterns from this active patch antenna and the performance of the oscillator measured at 77 K are reported. The oscillator had a maximum output power of 11.5 dBm at 77 K, which corresponded to an efficiency of 10 percent. In addition, the efficiency of the microstrip patch antenna together with its high temperature superconducting feedline was measured from 85 K to 30 K and was found to be 71 percent at 77 K, increasing to a maximum of 87.4 percent at 30 K.

  14. Crystallographic alignment of high-density gallium nitride nanowire arrays.

    PubMed

    Kuykendall, Tevye; Pauzauskie, Peter J; Zhang, Yanfeng; Goldberger, Joshua; Sirbuly, Donald; Denlinger, Jonathan; Yang, Peidong

    2004-08-01

    Single-crystalline, one-dimensional semiconductor nanostructures are considered to be one of the critical building blocks for nanoscale optoelectronics. Elucidation of the vapour-liquid-solid growth mechanism has already enabled precise control over nanowire position and size, yet to date, no reports have demonstrated the ability to choose from different crystallographic growth directions of a nanowire array. Control over the nanowire growth direction is extremely desirable, in that anisotropic parameters such as thermal and electrical conductivity, index of refraction, piezoelectric polarization, and bandgap may be used to tune the physical properties of nanowires made from a given material. Here we demonstrate the use of metal-organic chemical vapour deposition (MOCVD) and appropriate substrate selection to control the crystallographic growth directions of high-density arrays of gallium nitride nanowires with distinct geometric and physical properties. Epitaxial growth of wurtzite gallium nitride on (100) gamma-LiAlO(2) and (111) MgO single-crystal substrates resulted in the selective growth of nanowires in the orthogonal [1\\[Evec]0] and [001] directions, exhibiting triangular and hexagonal cross-sections and drastically different optical emission. The MOCVD process is entirely compatible with the current GaN thin-film technology, which would lead to easy scale-up and device integration.

  15. Applications of Classical and Quantum Mechanical Channeling in Condensed Matter Physics

    NASA Astrophysics Data System (ADS)

    Haakenaasen, Randi

    1995-01-01

    The first part of this work involves ion channeling measurements on the high temperature superconductor rm YBa_{2}Cu_{3}O _{7-delta}(YBCO). The experiments were motivated by several previous reports of anomalous behavior in the displacements of the Cu and O atoms in the vicinity of the critical temperature rm(T _{c}) in several high temperature superconductors. Our measurements were complimentary to previous experiments in that we used thin film YBCO (as opposed to bulk single crystals) and focused on a small region around rm T_{c}. We mapped out the channeling parameters chi _{min} and Psi_ {1/2} in a 30 K region around rm T_{c} in 1-2 K steps in thin film YBCO(001) on MgO. Neither of our measurements showed any discontinuities in chi _{min} or Psi_ {1/2} near the superconducting phase transition, and we therefore have no reason to expect anything but a smooth increase in atomic vibrations in this region. We conclude that any anomalous behavior in atomic displacements deduced from previous channeling experiments is not essential to superconductivity. In the second part of the work positrons were used to study quantum mechanical channeling effects. We clearly observed and quantitatively accounted for quantum interference effects, including Bragg diffraction, in the forward transmission of channeled MeV positrons through a single crystal. Experimental scans across the (100), (110), and (111) planes in Si showed excellent agreement with theoretical dynamical diffraction calculations, giving us confidence that we can accurately predict the spatial and momentum distributions of channeled positrons. New experiments are envisioned in which the channeling effect is combined with 2 quantum annihilation in flight measurements to determine valence electron and magnetic spin distributions in a crystal. Since the channeling effect focuses the positrons to the interstices of the crystal, the annihilation rate will reflect the valence electron density. Furthermore, the

  16. American Film Genres: Approaches to a Critical Theory of Popular Film.

    ERIC Educational Resources Information Center

    Kaminsky, Stuart M.

    This book is divided into twelve sections and contains photographs from many of the films discussed. The introduction defines film genre and describes the general theories behind this book; "The Individual Film" analyzes the film "Little Caesar" as it relates to the genre of gangster films; "Comparative Forms"…

  17. Film: An Introduction.

    ERIC Educational Resources Information Center

    Fell, John L.

    "Understanding Film," the opening section of this book, discusses perceptions of and responses to film and the way in which experiences with and knowledge of other media affect film viewing. The second section, "Film Elements," analyzes the basic elements of film: the use of space and time, the impact of editing, sound and color, and the effects…

  18. Film Makers On Film Making.

    ERIC Educational Resources Information Center

    Geduld, Harry M., Ed.

    This collection includes essays by and interviews with more than 30 film-makers, both classic and contemporary, on the subjects of their major interests and procedures in making films. The directors are: Louis Lumiere, Cecil Hepworth, Edwin S. Porter, Mack Sennett, David W. Griffith, Robert Flaherty, Charles Chaplin, Eric von Stroheim, Dziga…

  19. Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Choudhary, B. S.; Rajasthan Technical University, Rawatbhata Road, Kota 324010; Singh, A.

    We have grown homoepitaxial GaN films on metal organic chemical vapor deposition (MOCVD) grown 3.5 µm thick GaN on sapphire (0001) substrate (GaN template) using an ultra-high vacuum (UHV) laser assisted molecular beam epitaxy (LMBE) system. The GaN films were grown by laser ablating a polycrystalline solid GaN target in the presence of active r.f. nitrogen plasma. The influence of laser repetition rates (10-30 Hz) on the surface morphology of homoepitaxial GaN layers have been studied using atomic force microscopy. It was found that GaN layer grown at 10 Hz shows a smooth surface with uniform grain size compared to the rough surfacemore » with irregular shape grains obtained at 30 Hz. The variation of surface roughness of the homoepitaxial GaN layer with and without wet chemical etching has been also studied and it was observed that the roughness of the film decreased after wet etching due to the curved structure/rough surface.« less

  20. Methods for producing complex films, and films produced thereby

    DOEpatents

    Duty, Chad E.; Bennett, Charlee J. C.; Moon, Ji -Won; Phelps, Tommy J.; Blue, Craig A.; Dai, Quanqin; Hu, Michael Z.; Ivanov, Ilia N.; Jellison, Jr., Gerald E.; Love, Lonnie J.; Ott, Ronald D.; Parish, Chad M.; Walker, Steven

    2015-11-24

    A method for producing a film, the method comprising melting a layer of precursor particles on a substrate until at least a portion of the melted particles are planarized and merged to produce the film. The invention is also directed to a method for producing a photovoltaic film, the method comprising depositing particles having a photovoltaic or other property onto a substrate, and affixing the particles to the substrate, wherein the particles may or may not be subsequently melted. Also described herein are films produced by these methods, methods for producing a patterned film on a substrate, and methods for producing a multilayer structure.

  1. Thin Films

    NASA Astrophysics Data System (ADS)

    Khorshidi, Zahra; Bahari, Ali; Gholipur, Reza

    2014-11-01

    Effect of annealing temperature on the characteristics of sol-gel-driven Ta ax La(1- a) x O y thin film spin-coated on Si substrate as a high- k gate dielectric was studied. Ta ax La(1- a) x O y thin films with different amounts of a were prepared (as-prepared samples). X-ray diffraction measurements of the as-prepared samples indicated that Ta0.3 x La0.7 x Oy film had an amorphous structure. Therefore, Ta0.3 x La0.7 x O y film was chosen to continue the present studies. The morphology of Ta0.3 x La0.7 x O y films was studied using scanning electron microscopy and atomic force microscopy techniques. The obtained results showed that the size of grain boundaries on Ta0.3 x La0.7 x O y film surfaces was increased with increasing annealing temperature. Electrical and optical characterizations of the as-prepared and annealed films were investigated as a function of annealing temperature using capacitance-voltage ( C- V) and current density-voltage ( J- V) measurements and the Tauc method. The obtained results demonstrated that Ta0.3 x La0.7 x O y films had high dielectric constant (≈27), wide band gap (≈4.5 eV), and low leakage current density (≈10-6 A/cm2 at 1 V).

  2. The National Film Board's Studio D: Feminists Making Films for Peace.

    ERIC Educational Resources Information Center

    Taylor, Anita

    Studio D of the National Film Board of Canada, a women's film making unit established to make films by, for, and about women, has created a group of five films that effectively develop the argument that women can and must join the effort to bring peace to a nuclear world. The first of these peace films, "If You Love This Planet,"…

  3. Films Kids Like. A Catalog of Short Films For Children.

    ERIC Educational Resources Information Center

    Rice, Susan, Ed.

    Information on the Children's Film Theater and a list of short films are contained in this catalog. The first section reviews the purpose of the Children's Film Theater, its history and what has been learned as a result of its efforts. Details on the mechanics of showing films for children are also covered, including matters such as screening…

  4. The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(1 1 1) substrates

    NASA Astrophysics Data System (ADS)

    Jiang, Quanzhong; Allsopp, Duncan W. E.; Bowen, Chris R.; Wang, Wang N.

    2013-09-01

    The tensile stress in light-emitting diode (LED)-on-Si(1 1 1) multilayer structures must be reduced so that it does not compromise the multiple quantum well emission wavelength uniformity and structural stability. In this paper it is shown for non-optimized LED structures grown on Si(1 1 1) substrates that both emission wavelength uniformity and structural stability can be achieved within the same growth process. In order to gain a deeper understanding of the stress distribution within such a structure, cross-sectional Raman and photo-luminescence spectroscopy techniques were developed. It is observed that for a Si:GaN layer grown on a low-temperature (LT) AlN intermediate layer there is a decrease in compressive stress with increasing Si:GaN layer thickness during MOCVD growth which leads to a high level of tensile stress in the upper part of the layer. This may lead to the development of cracks during cooling to room temperature. Such a phenomenon may be associated with annihilation of defects such as dislocations. Therefore, a reduction of dislocation intensity should take place at the early stage of GaN growth on an AlN or AlGaN layer in order to reduce a build up of tensile stress with thickness. Furthermore, it is also shown that a prolonged three dimensional GaN island growth on a LT AlN interlayer for the reduction of dislocations may result in a reduction in the compressive stress in the resulting GaN layer.

  5. Filming eugenics: teaching the history of eugenics through film.

    PubMed

    Ooten, Melissa; Trembanis, Sarah

    2007-01-01

    In teaching eugenics to undergraduate students and general public audiences, film should he considered as a provocative and fruitful medium that can generate important discussions about the intersections among eugenics, gender, class, race, and sexuality. This paper considers the use of two films, A Bill of Divorcement and The Lynchburg Story, as pedagogical tools for the history of eugenics. The authors provide background information on the films and suggestions for using the films to foster an active engagement with the historical eugenics movement.

  6. Nanocomposite films

    DOEpatents

    Mitlin, David; , Ophus, Colin; Evoy, Stephane; Radmilovic, Velimir; Mohammadi, Reza; Westra, Ken; Nelson-Fitzpatrick, Nathaniel; Lee, Zonghoon

    2010-07-20

    A thin-film composition of nanocrystal molybdenum in an amorphous metallic matrix may be formed by co-sputtering Mo with aluminum or nickel. NEMS cantilevers may be formed from the film. The films exhibit high nanoindentation hardness and a reduction in roughness and intrinsic stress, while maintaining resistivity in the metallic range.

  7. On Film

    ERIC Educational Resources Information Center

    Watts, Marty

    2006-01-01

    In this article, the author discusses the role of window films in enhancing indoor air quality in schools. Historically, window film has been used to reduce temperatures in buildings prone to overheating. Too much solar energy entering through windows makes occupants uncomfortable and air conditioning more costly. Film has been a simple solution…

  8. UV actinometer film

    NASA Technical Reports Server (NTRS)

    Coulbert, C. D.; Gupta, A.; Pitts, J.

    1980-01-01

    Cumulative UV radiation can be measured by low-cost polymer film that is unaffacted by visible light. Useful for virtually any surface, film can help paint and plastics manufacturers determine how well their products stand up against UV radiation. Actinometer film uses photochemically sensitive compound that changes its chemical composition in response to solar radiation. Extent of chemical conversion depends on length exposure and can be measured by examining film sample with spectrophotometer. Film can be exposed from several seconds up to month.

  9. Water-evaporation reduction by duplex films: application to the human tear film.

    PubMed

    Cerretani, Colin F; Ho, Nghia H; Radke, C J

    2013-09-01

    Water-evaporation reduction by duplex-oil films is especially important to understand the physiology of the human tear film. Secreted lipids, called meibum, form a duplex film that coats the aqueous tear film and purportedly reduces tear evaporation. Lipid-layer deficiency is correlated with the occurrence of dry-eye disease; however, in-vitro experiments fail to show water-evaporation reduction by tear-lipid duplex films. We review the available literature on water-evaporation reduction by duplex-oil films and outline the theoretical underpinnings of spreading and evaporation kinetics that govern behavior of these systems. A dissolution-diffusion model unifies the data reported in the literature and identifies dewetting of duplex films into lenses as a key challenge to obtaining significant evaporation reduction. We develop an improved apparatus for measuring evaporation reduction by duplex-oil films including simultaneous assessment of film coverage, stability, and temperature, all under controlled external mass transfer. New data reported in this study fit into the larger body of work conducted on water-evaporation reduction by duplex-oil films. Duplex-oil films of oxidized mineral oil/mucin (MOx/BSM), human meibum (HM), and bovine meibum (BM) reduce water evaporation by a dissolution-diffusion mechanism, as confirmed by agreement between measurement and theory. The water permeability of oxidized-mineral-oil duplex films agrees with those reported in the literature, after correction for the presence of mucin. We find that duplex-oil films of bovine and human meibum at physiologic temperature reduce water evaporation only 6-8% for a 100-nm film thickness pertinent to the human tear film. Comparison to in-vivo human tear-evaporation measurements is inconclusive because evaporation from a clean-water surface is not measured and because the mass-transfer resistance is not characterized. Copyright © 2013 Elsevier B.V. All rights reserved.

  10. Thin teflon-like films for MEMS: Film properties and reliability studies

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Smith, B.K.; LaVigne, G.; Sniegowski, J.J.

    1998-07-01

    This work presents film properties and initial reliability studies for thin Teflon-like films applied to a unique test vehicle, the Sandia-designed and fabricated microengine. Results on microengines coated with the film show a factor of three improvement in their lifetime and an order of magnitude reduction in the coefficient of friction when compared to uncoated samples. Coefficients Of Friction (COF) of 0.07 for the Teflon-like film and 1.0 for uncoated samples are extracted from models which match the measured behavior of working microengines. These films, deposited form a plasma source, exhibit the ability to penetrate into very narrow, deep channelsmore » common to many MEMS devices. For as-deposited film, both the refractive index at 1.4 and the contact angle with water at 108{degree} show the film to be very similar to bulk Teflon PTFE. Film stability as a function of temperature has been examined using Fourier Transformation Infrared (FTIR) spectroscopy. The film structure as observed by the fluorine-carbon (F-C) peak is stable up to 200 C, but starts decomposing above 250 C. Film composition has been examined using X-ray photoelectron spectroscopy (XPS) and is quite different for directly exposed surfaces compared with deep, narrow channels where the deposition process is diffusion limited.« less

  11. Film in Development.

    ERIC Educational Resources Information Center

    Information Center on Instructional Technology Report, 1976

    1976-01-01

    The positive and negative aspects of using film as a medium for inducing change in developing nations are explored in this issue. Critics of the use of film for development cite (1) the culture specific nature of film content of foreign produced films; (2) the technical, economic, and logistical problems of in-country production; and (3) lack of…

  12. Ag films deposited on Si and Ti: How the film-substrate interaction influences the nanoscale film morphology

    NASA Astrophysics Data System (ADS)

    Ruffino, F.; Torrisi, V.

    2017-11-01

    Submicron-thick Ag films were sputter deposited, at room temperature, on Si, covered by the native SiO2 layer, and on Ti, covered by the native TiO2 layer, under normal and oblique deposition angle. The aim of this work was to study the morphological differences in the grown Ag films on the two substrates when fixed all the other deposition parameters. In fact, the surface diffusivity of the Ag adatoms is different on the two substrates (higher on the SiO2 surface) due to the different Ag-SiO2 and Ag-TiO2 atomic interactions. So, the effect of the adatoms surface diffusivity, as determined by the adatoms-substrate interaction, on the final film morphology was analyzed. To this end, microscopic analyses were used to study the morphology of the grown Ag films. Even if the homologous temperature prescribes that the Ag film grows on both substrates in the zone I described by the structure zone model some significant differences are observed on the basis of the supporting substrate. In the normal incidence condition, on the SiO2/Si surface a dense close-packed Ag film exhibiting a smooth surface is obtained, while on the TiO2/Ti surface a more columnar film morphology is formed. In the oblique incidence condition the columnar morphology for the Ag film occurs both on SiO2/Si and TiO2/Ti but a higher porous columnar film is obtained on TiO2/Ti due to the lower Ag diffusivity. These results indicate that the adatoms diffusivity on the substrate as determined by the adatom-surface interaction (in addition to the substrate temperature) strongly determines the final film nanostructure.

  13. The New Film Technologies: Computerized Video-Assisted Film Production.

    ERIC Educational Resources Information Center

    Mott, Donald R.

    Over the past few years, video technology has been used to assist film directors after they have shot a scene, to control costs, and to create special effects, especially computer assisted graphics. At present, a computer based editing system called "Film 5" combines computer technology and video tape with film to save as much as 50% of…

  14. Heterocyclic Acene-Diketopyrrolopyrrole Molecular Semiconductors for Efficient Solution-Processed Organic Solar Cells

    NASA Astrophysics Data System (ADS)

    Loser, Stephen C.

    (Al,Ga,In)N semiconductor materials are widely used in high-frequency, high-power electronics due to their wide bandgaps. Both metal- and N-polar AlGaN/GaN high-electron-mobility transistors (HEMTs) demonstrated excellent performances as high-frequency signal amplifiers. While the majority of today's III-N transistors are based on metal-polar heterostructures, N-polar materials have gained attention following the breakthrough in the deposition of high quality films. Compared to their metal-polar counterparts, N-polar HEMT structures improve the scalability of devices, increase the electron confinement and reduce contact resistance, exhibiting great potentials in high-frequency device fabrications. In order to suppress alloy scattering in the HEMT structures, a thin AlN interlayer is usually introduced between the AlGaN barrier and the GaN channel. However, a significant amount of unintentional Ga incorporation was observed in AlN films grown by metal-organic chemical vapor deposition (MOCVD), one of the major techniques to produce the HEMT epi structures. In the first part of my thesis, the impact of impure AlN interlayers on HEMTs was examined, explaining the significant improvement in electron mobility despite of the high Ga concentration of ˜ 50%. Moreover, both metal-polar and N-polar AlN films grown by MOCVD under various conditions were investigated, the results of which indicated that the major source of unintentional Ga was the former Ga deposition on the susceptor in the same run. It was also observed that N-polar AlN films contained less Ga compared to metal-polar ones when they were grown under same conditions. Methods to suppress the Ga were also discussed. In addition, the morphological and electrical properties of the GaN/AlN/GaN heterostructures with AlN films grown under different conditions were analyzed by atomic force microscopy (AFM) and room temperature Van der Pauw hall measurement. Following the study of AlN interlayers in the HEMT

  15. Contributions of Film Introductions and Film Summaries to Learning from Instructional Films.

    ERIC Educational Resources Information Center

    Lathrop, C. W., Jr.; Norford, C. A.

    An exploratory study of the contribution to learning of typical introductory and summarizing sequences in instructional films underlined the need for further experimental work to determine what kinds of introductory and concluding sequences are most useful in promoting learning from films. The first part of the study was concerned with film…

  16. Non-Epitaxial Thin-Film Indium Phosphide Photovoltaics: Growth, Devices, and Cost Analysis

    NASA Astrophysics Data System (ADS)

    Zheng, Maxwell S.

    In recent years, the photovoltaic market has grown significantly as module prices have continued to come down. Continued growth of the field requires higher efficiency modules at lower manufacturing costs. In particular, higher efficiencies reduce the area needed for a given power output, thus reducing the downstream balance of systems costs that scale with area such as mounting frames, installation, and soft costs. Cells and modules made from III-V materials have the highest demonstrated efficiencies to date but are not yet at the cost level of other thin film technologies, which has limited their large-scale deployment. There is a need for new materials growth, processing and fabrication techniques to address this major shortcoming of III-V semiconductors. Chapters 2 and 3 explore growth of InP on non-epitaxial Mo substrates by MOCVD and CSS, respectively. The results from these studies demonstrate that InP optoelectronic quality is maintained even by growth on non-epitaxial metal substrates. Structural characterization by SEM and XRD show stoichiometric InP can be grown in complete thin films on Mo. Photoluminescence measurements show peak energies and widths to be similar to those of reference wafers of similar doping concentrations. In chapter 4 the TF-VLS growth technique is introduced and cells fabricated from InP produced by this technique are characterized. The TF-VLS method results in lateral grain sizes of >500 mum and exhibits superior optoelectronic quality. First generation devices using a n-TiO2 window layer along with p-type TF-VLS grown InP have reached ˜12.1% power conversion efficiency under 1 sun illumination with VOC of 692 mV, JSC of 26.9 mA/cm2, and FF of 65%. The cells are fabricated using all non-epitaxial processing. Optical measurements show the InP in these cells have the potential to support a higher VOC of ˜795 mV, which can be achieved by improved device design. Chapter 5 describes a cost analysis of a manufacturing process using an

  17. Optical and Structural Properties of Microcrystalline GaN on an Amorphous Substrate Prepared by a Combination of Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu

    2016-05-01

    Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the othermore » hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.« less

  18. Exploring the Film.

    ERIC Educational Resources Information Center

    Kuhns, William; Stanley, Robert

    The purpose of film study is defined here in the words of D. W. Griffiths: "My goal is above all to make you see." This book is intended to be used as a text in a film study course. It traces the development of films from a scientific curiosity through silent films to modern wide screen productions. A comic strip is used to demonstrate the effect…

  19. Electrochromic nanocomposite films

    DOEpatents

    Milliron, Delia; Llordes, Anna; Buonsanti, Raffaella; Garcia, Guillermo

    2018-04-10

    The present invention provides an electrochromic nanocomposite film. In an exemplary embodiment, the electrochromic nanocomposite film, includes (1) a solid matrix of oxide based material and (2) transparent conducting oxide (TCO) nanostructures embedded in the matrix. In a further embodiment, the electrochromic nanocomposite film farther includes a substrate upon which the matrix is deposited. The present invention also provides a method of preparing an electrochromic nanocomposite film.

  20. The American Film Heritage; Impressions from the American Film Institute Archives.

    ERIC Educational Resources Information Center

    Shales, Tom; And Others

    The American Film Institute has an archive which presently contains more than 9,000 films, many of them rare. The articles in this volume are based on some of the films in the collection. Among the topics of these essays are: pioneers like D. W. Griffith and Thomas H. Ince, treatment of blacks and Indians in films, development of the techniques…