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Sample records for mocvd ybco films

  1. In Situ deposition of YBCO high-T(sub c) superconducting thin films by MOCVD and PE-MOCVD

    NASA Technical Reports Server (NTRS)

    Zhao, J.; Noh, D. W.; Chern, C.; Li, Y. Q.; Norris, P.; Gallois, B.; Kear, B.

    1990-01-01

    Metalorganic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T( sub c) greater than 90 K and Jc approx. 10 to the 4th power A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metalorganic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology.

  2. In-situ deposition of YBCO high-Tc superconducting thin films by MOCVD and PE-MOCVD

    NASA Technical Reports Server (NTRS)

    Zhao, J.; Noh, D. W.; Chern, C.; Li, Y. Q.; Norris, P. E.; Kear, B.; Gallois, B.

    1991-01-01

    Metal-Organic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T(sub c) greater than 90 K and J(sub c) of approximately 10(exp 4) A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology.

  3. Thin YBCO films on ? (001) substrates grown by injection MOCVD

    NASA Astrophysics Data System (ADS)

    Abrutis, A.; Sénateur, J. P.; Weiss, F.; Kubilius, V.; Bigelyte, V.; Saltyte, Z.; Vengalis, B.; Jukna, A.

    1997-12-01

    YBCO thin (about 0953-2048/10/12/021/img10) films were deposited at 0953-2048/10/12/021/img11 on 0953-2048/10/12/021/img12 (001) by single-source injection CVD. Precisely controlled microamounts of organometallic 0953-2048/10/12/021/img13-diketonates dissolved in an organic solvent were injected sequentially into the evaporator by means of a computer-driven injector and the resultant vapour was transported into the deposition zone. The influence of the vapour phase composition on films' properties was investigated. A mixture of 0953-2048/10/12/021/img14 and 0953-2048/10/12/021/img15-oriented YBCO crystallites exists in all deposited films and its ratio depends on the vapour phase composition. For both a and c perpendicular crystallites only 0953-2048/10/12/021/img16 in-plane orientation with respect to substrate axes was found. Bidirectional twinning was established in the crystallites of both types. 0953-2048/10/12/021/img17 of the films (about 90 K) was almost independent of the vapour phase composition in the studied range. However, the critical current density 0953-2048/10/12/021/img18 depended clearly on the vapour phase composition in relation to the 0953-2048/10/12/021/img19 ratio variation. 0953-2048/10/12/021/img18 of the films varied in the range 0953-2048/10/12/021/img21.

  4. System innovations for aerosol MOCVD of YBCO superconducting thin films

    NASA Astrophysics Data System (ADS)

    Nelms, David Martin

    System innovations were developed for metallo-organic chemical vapor deposition (MOCVD) in order to achieve two main objectives: to fully characterize a novel feed system while and to demonstrate uniform, superconducting thin films over a 2 inch diameter. The novel aerosol feed system was fully characterized and improved by performing solubility and carbon tests with different metallo-organic solvents and by thermally mapping the heating section. The gas flow profiles in the reactor chamber were modeled with a finite-element software package called Fluent. This enabled us to study different nozzles for improving the uniformity of the velocity near the substrate and the uniformity of the depositions. Depositions were then performed to test the validity of the computer model and to determine correct molar feed ratios. The uniformity was measured with a scanning electron microscope (SEM) while the film compositions were analyzed with a X-Ray photoelectron spectroscopy system (XPS). Once the correct feed compositions were determined, this ratio was used along with the feed nozzle designed to deposit uniform, superconducting thin films.

  5. High Throughput of Reel-to-reel MOCVD-YBCO on Different CSD-and MOCVD-buffered Cube Textured Ni-substrates

    NASA Astrophysics Data System (ADS)

    Muydinov, Ruslan; Stadel, Oliver; Falter, Martina; BŠcker, Michael

    Cheap chemical approaches: CSD/MOD and MOCVD were used and demonstrated to be feasible in 2G-wire production. New reel-to-reel MOCVD pilot system with higher throughput was examined, tuned and used in all YBCO depositions as well as for MgO, LMO, YSZ and CeO2 buffer layers fabrication. YBCO deposition process was found to be stable either at 10 m/h on 50 m long tapes or at 20 m/h on 100 m long tapes. All-layers-by-MOCVD approach allowed to get critical current up to Ic max > 90A/cm-width. On a single CSD-LZO (lanthanum zirconate) buffered Ni-alloy tapes 400 nm thick YBCO films with critical current density up to jc max = 1.5 MA/cm2 were obtained. On the basis of single CSD-LZO-buffered tapes, some multiple buffer sandwiches were created and compared in the same YBCO deposition. The best result was reached on CVD-CeO2/1×CSD-LZO/Ni5W buffer oxide system and showed for 650 nm thick YBCO rather stable over 2.5 m length Ic = 80-90 A.

  6. Microwave characterization of normal and superconducting states of MOCVD made YBCO tapes

    NASA Astrophysics Data System (ADS)

    Wosik, Jarek; Krupka, Jerzy; Qin, Kuang; Ketharnath, Dhivya; Galstyan, Eduard; Selvamanickam, Venkat

    2017-03-01

    We have used a microwave, non-contact, non-destructive, dielectric resonator (DR) technique to characterize complex conductivity of different quality YBCO/Hastelloy tapes for the purpose of exploring such a technique as a potential quality control method for fabrication of YBCO tapes. The tapes were deposited at different temperatures on Hastelloy-supported oxide buffer layers using the MOCVD technique. The buffer stack consisted of aluminum oxide (Al2O3), yttrium oxide (Y2O3), and textured ion beam assisted deposition-MgO and LaMnO3 layers. Two dielectric resonators (DRs), the single post DR, consisting of high-permittivity barium zirconium titanate ceramic operating at 13 GHz in quasi-TE01δ mode, and the rod DR, consisting of rutile single crystal disk operating at 9.4 GHz in-TE011 mode, were designed to meet sensitivity requirements for characterization of conductivity of the superconductor at normal and superconducting states, respectively. For calculations of complex conductivity from experimental data of Q-factor and resonant frequency shift, a commercial electromagnetic simulator HFSS, based on finite elements analysis, was used. The theoretical Q-factor and resonant frequency on conductivity functions obtained from full wave numerical simulations of microwave fields were matched with the experimental data to determine conductivity of the YBCO tapes in both normal and superconducting states. In addition, for comparison purposes, 280 nm thick high-quality YBCO epitaxial film deposited on a dielectric substrate was also characterized, including frequency dependence of the complex conductivity. Discussion about feasibility of using DR microwave techniques as a quality control tool via measurements of conductivity versus temperature slope of the YBCO/Hastelloy tape in normal state is included. Also, microwave conductivity values of Hastelloy substrate as a function of temperature are reported.

  7. Correlation of local structure peculiarities and critical current density of 2G MOCVD YBCO tapes with BaZrO3 nanoinclusions

    NASA Astrophysics Data System (ADS)

    Menushenkov, A. P.; Ivanov, V. G.; Chepikov, V. N.; Nygaard, R. R.; Soldatenko, A. V.; Rudnev, I. A.; Osipov, M. A.; Mineev, N. A.; Kaul, A. R.; Mathon, O.; Monteseguro, V.

    2017-04-01

    We have studied the influence of BaZrO3 nanoinclusions on the local structure and critical current density of second-generation high temperature superconducting tapes based on YBa2Cu3O7‑δ (YBCO) films. The films were made by metal–organic chemical vapor deposition (MOCVD). The crystal and local structure of the materials under study were analysed by x-ray diffraction and x-ray absorption spectroscopy (EXAFS + XANES). We have found that, being added at MOCVD process, Zr forms BaZrO3 nanoinclusions in YBCO matrix. The distance between Zr and the neighboring atoms is shorter than that one in a bulk crystalline BaZrO3, so we conclude that the nanoinclusions are in compressed state. The incorporation of 5 mol% BaZrO3 minimizes the static disorder of Cu–O bonds and maximizes their stiffness in YBCO. We show that the local structure peculiarities correlate well with the observed critical current behavior and consider this to be additional evidence in favor of small amounts of BaZrO3 nanoinclusions as efficient pinning centers.

  8. High Performance YBCO Films

    DTIC Science & Technology

    1992-07-01

    growing high quality MgO films on SrF2 substrates is the oxygen partial pressure during the growth. The x-ray data presented in Fig. 13 indicates a...fluo-ide and quartz substrates. The best result with two buffer layers (MgO and YSZ) on SrF2 was an onset temperature (Tc) of 82K and a transition...With a YSZ buffer an onset temperature of 85K and a transition width of 5K was achieved. Recent success was demonstrated by Neocera ( under a NASA

  9. Fabrication of YSZ buffer layer by single source MOCVD technique for YBCO coated conductor

    NASA Astrophysics Data System (ADS)

    Jun, Byung-Hyuk; Sun, Jong-Won; Kim, Ho-Jin; Lee, Dong-Wook; Jung, Choong-Hwan; Park, Soon-Dong; Kim, Chan-Joong

    2003-10-01

    Yttria stabilized zirconia (YSZ) buffer layers were deposited by a metal organic chemical vapor deposition technique using a single liquid source for the application of YBa 2Cu 3O 7- δ (YBCO) coated conductor. Y:Zr mole ratio was 0.2:0.8, and tetrahydrofuran (THF) was used as a solvent. The (1 0 0) single crystal MgO substrate was used for searching the deposition conditions. Bi-axially oriented CeO 2 and NiO films were fabricated on {1 0 0} <0 0 1> textured Ni substrate by the same method and used as templates. At a constant working pressure of 10 Torr, the deposition temperatures (660-800 °C) and oxygen flow rates (100-500 sccm) were changed to find the optimum deposition condition. The best (1 0 0) oriented YSZ film on MgO was obtained at 740 °C and O 2 flow rate of 300 sccm. For a YSZ buffer layer with this deposition condition on a CeO 2/Ni template, full width half maximum values of the in-plane ( ϕ-scan) and out-of-plane ( ω-scan) alignments were 10.6° and 9.8°, respectively. The SEM image of YSZ film on CeO 2/Ni showed surface morphologies without microcracks. The film deposition rate was about 100 nm/min.

  10. Fast infrared response of YBCO thin films

    NASA Technical Reports Server (NTRS)

    Ballentine, P. H.; Kadin, A. M.; Donaldson, W. R.; Scofield, J. H.; Bajuk, L.

    1990-01-01

    The response to short infrared pulses of some epitaxial YBCO films prepared by sputter deposition and by electron-beam evaporation is reported. The response is found to be essentially bolometric on the ns timescale, with some indirect hints of nonequilibrium electron transport on the ps scale. Fast switching could be obtained either by biasing the switch close to the critical current or by cooling the film below about 20 K. These results are encouraging for potential application to a high-current optically-triggered opening switch.

  11. Improved transport properties of polycrystalline YBCO thin-films

    NASA Astrophysics Data System (ADS)

    Azoulay, J.; Verdyan, A.; Lapsker, I.

    1994-12-01

    Resistive evaporation technique was used to fabricate polycrystalline YBaCuO and YBaNaCuO thin films on MgO substrates. Heat treatment was carried out in a low oxygen partial pressure. Polycrystalline YBCO and Na doped YBCO thin films samples were thus obtained using the same technique and conditions. The critical current density of Na doped YBCO sample was measured to be significantly higher than that of the undoped YBCO one. The results are discussed in terms of the Na contribution to the intragrain conductivity.

  12. Vortex motion in YBCO thin films

    NASA Astrophysics Data System (ADS)

    Shapiro, V.; Verdyan, A.; Lapsker, I.; Azoulay, J.

    1999-09-01

    Hall resistivity measurements as function of temperature in the vicinity of Tc were carried out on a thin films YBCO superconductors. A sign reversal of Hall voltage with external magnetic field applied along c axis have been observed upon crossing Tc. Hall voltage in the mixed state was found to be insensitive to the external magnetic field inversion. These effects are discussed and explained in terms of vortex motion under the influence of Magnus force balanced by large damping force. It is argued that in this model the flux-line velocity has component opposite to the superfluid current direction thus yielding a negative Hall voltage.

  13. Preparation of YBCO-BYTO and YBCO-BZO nanostructured superconducting films by chemical method

    NASA Astrophysics Data System (ADS)

    Garcés, P.; Coll, M.; Castro, H.; Puig, T.; Obradors, X.

    2017-01-01

    YBCO-BYTO6% and YBCO-BZO10% YBa2Cu3O7-d-Ba2YTaO6 6% (YBCO-BYTO6%) and YBa2Cu3O7--BaZrO3 10% (YBCO-BZO 10%) nanostructured films were grown by the Chemical Solution Deposition method, and compared with YBCO pure films. Films were deposited on YSZ substrates, with Ce0.9Zr0.1O2 and Ce0.6Zr0.4O2 buffer layers. They were characterized by GADDS X-ray diffraction, scanning electron microscopy (SEM) and inductive (SQUID) measurements of the critical temperature (Tc) and critical current density (Jc). It was found that YBCO-BZO10% films presented better superconducting properties (Tc=89.2K and Jc=1.3MA/cm2), probably due to an enhanced pinning force, originated by BZO nanoparticles. Additionally, it was found that these films have lower reactivity with the buffer layer.

  14. Pr Doped YBCO Films Produced by Pulsed Laser Deposition (Postprint)

    DTIC Science & Technology

    2012-02-01

    found that the substituent was dispersed throughout the film and led to an increase in nanoparticles. EXPERIMENT Thin films of (Y1-x, Prx )Ba2Cu3O7-d...were produced by PLD using conditions previously optimized for pure YBCO. PLD targets were prepared with the composition (Y1-x, Prx )Ba2Cu3O7- d

  15. MOCVD of multimetal and noble metal films

    NASA Astrophysics Data System (ADS)

    Endle, James Patrick

    2000-11-01

    Carbon content in TiN films produced with tetrakis(dimethylamino)titanium (TDMAT) and methylhydrazine or dimethylhydrazine can be controlled at or below 10% with a N/Ti ratio of ˜1.3 at growth temperatures between 573 and 723 K. Post-dosing either hydrazine on a CVD TiN film results in additional N-Ti bonds, indicating a surface reaction between the two precursors occurs. Co-dosing hydrazine-like compounds with larger alkyl ligands than methyl resulted in additional carbon incorporation in the TiN film. A growth system, consisting of a load lock and growth chamber, and a precursor pyrolysis system were designed and built to study metalorganic chemical vapor deposition. Addition of a bubbler and a direct liquid injection system allowed for the vaporization of solid and liquid precursors and solutions of multiple precursors. A precursor pyrolysis system was designed for high and low vapor pressure precursors and high carrier gas flow rates. The systems were used to study (Al,Ti)N and Ir film growth. (Al,Ti)N was used as a template to study the incorporation of elements into a multimetal chemical vapor deposited film using NH3 and a DLI solution of TDMAT and the tris(dimethylarnino)alane dimer (TDMAA) in toluene-NH 3 significantly decreases the decomposition temperature of both precursors. Carbon was reduced by increasing the NH3 partial pressure, and the Al incorporation was increased by increasing the TDMAA/TDMAT ratio in the DLI solution. Exposure to ambient resulted in significant oxygen incorporation and the removal of carbon and nitrogen from the (AI,Ti)N film. Conformal (AI,Ti)N films were produced at 450 K in the presence of NH3 and at 550 K without NH3. The role of O2 in Ir film growth was studied with the newly designed equipment. O2 significantly decreases the decomposition temperature of (MeCp)Ir(COD) below 425 K by preventing a carbonaceous build-up on the iridium film. By decreasing the oxygen partial pressure, the island nucleation and coalescence

  16. The preparation of high-J c Gd0.5Y0.5Ba2Cu3O7-δ thin films by the MOCVD process

    NASA Astrophysics Data System (ADS)

    Zhao, R. P.; Zhang, F.; Liu, Q.; Xia, Y. D.; Lu, Y. M.; Cai, C. B.; Tao, B. W.; Li, Y. R.

    2016-06-01

    A home-designed metal organic chemical vapor deposition (MOCVD) system has been employed to prepare high critical current density (J c) Gd0.5Y0.5Ba2Cu3O7-δ (GdYBCO) thin films on LaMnO3/epitaxial MgO/ion beam assisted deposition (IBAD)-MgO/solution deposition planarization (SDP)-Y2O3-buffered Hastelloy tapes; the thin films were directly heated by the Joule effect after applying an heating current (I h ) through the Hastelloy tapes. The effect of the mole ratio of the metal organic sources has been systematically investigated. X-ray diffraction (XRD) and scanning electron microscope (SEM) analyses indicated that the GdYBCO films crystallized better and became denser with the increasing of the Cu/Ba ratio from 1.0 to 1.1, yielding a J c at 77 K and 0 T of 200 nm GdYBCO film increasing from 2.5 MA cm-2 to 7 MA cm-2. In addition, SEM and energy dispersive spectrometer (EDS) characterizations revealed that more and more outgrowths appeared and the density of the film was reduced with an increase in the Cu/Ba ratio from 1.1 to 1.2. When the I h was 26.8 A and the mole ratio of Gd(tmhd)3, Y(tmhd)3, Ba(tmhd)2 and Cu(tmhd)2 in the precursor was 0.55:0.55:2:2.2, the critical current (I c) of the deposited 200 nm-thick GdYBCO film reached a 140 A cm-1 width (77 K, 0 T), corresponding to the J c 7 MA cm-2 (77 K, 0 T).

  17. High quality uniform YBCO film growth by the metalorganic deposition using trifluoroacetates

    NASA Astrophysics Data System (ADS)

    Wang, S. S.; Zhang, Z. L.; Wang, L.; Gao, L. K.; Liu, J.

    2017-03-01

    A need exists for the large-area superconducting YBa2Cu3O7-x (YBCO) films with high critical current density for microwave communication and/or electric power applications. Trifluoroacetic metalorganic (TFA-MOD) method is a promising low cost technique for large-scale production of YBCO films, because it does not need high vacuum device and is easily applicable to substrates of various shape and size. In this paper, double-sided YBCO films with maximum 2 in diameter were prepared on LaAlO3 substrates by TFA-MOD method. Inductive critical current densitiy Jc, microwave surface resistance Rs, as well as the microstructure were characterized. A newly homemade furnace system was used to epitaxially grown YBCO films, which can improve the uniformity of YBCO film significantly by gas supply and temperature distribution proper design. Results showed that the large area YBCO films were very uniform in microstructure and thickness distribution, an average inductive Jc in excess of 6 MA/cm2 with uniform distribution, and low Rs (10 GHz) below 0.3 mΩ at 77 K were obtained. Andthe film filter may be prepared to work at temperatures lower than 74 K. These results are very close to the highest value of YBCO films made by conventional vacuum method, so we show a very promising route for large-scale production of high quality large-area YBCO superconducting films at a lower cost.

  18. Homoepitaxial growth of MOD-YBCO thick films on evaporated and MOD templates

    NASA Astrophysics Data System (ADS)

    Tanabe, D.; Yamaguchi, I.; Sohma, M.; Tsukada, K.; Matsui, M.; Kumagai, T.; Manabe, T.

    2011-11-01

    We have prepared metal organic deposition (MOD)-YBCO thick films by repeating the coating-pyrolysis-crystallization procedure onto ∼100-nm-thick evaporated and MOD templates. Surface morphology of the template was found to strongly affect the homoepitaxial growth of MOD-YBCO layers on the template; namely, the epitaxial growth of MOD-YBCO on the evaporated template was much easier than that on the MOD template. A 220-nm-thick epitaxial MOD-YBCO film was successfully prepared on the 100-nm-thick evaporated-YBCO template to obtain a 320-nm-thick YBCO film, which exhibited Jc = 2.44 MA/cm2 and Ic = 78 A/cm. The Ic value has significantly increased from 37 A/cm for the evaporated-template.

  19. Evaluating Superconducting YBCO Film Properties Using X-Ray Photoelectron Spectroscopy (Postprint)

    DTIC Science & Technology

    2012-02-01

    AFRL-RZ-WP-TP-2012-0093 EVALUATING SUPERCONDUCTING YBCO FILM PROPERTIES USING X-RAY PHOTOELECTRON SPECTROSCOPY (POSTPRINT) Paul N. Barnes...2012 Conference Paper Postprint 01 January 2002 – 01 January 2004 4. TITLE AND SUBTITLE EVALUATING SUPERCONDUCTING YBCO FILM PROPERTIES USING X-RAY

  20. In-situ sputtering of YBCO films for microwave applications

    NASA Technical Reports Server (NTRS)

    Ballentine, P. H.; Kadin, A. M.; Mallory, D. S.

    1991-01-01

    RF magnetron sputtering from a single YBCO target onto a heated substrate (700 C) was used to obtain c-axis-oriented 1-2-3 films that are superconducting without a subsequent annealing or oxygenation step, with Tc(R = 0) as high as 88 K on MgO and LaAlO3 substrates. This process uses an 8-in-diameter target in the sputter-up configuration, with a central grounded shield to eliminate negative ion bombardment. It can reproducibly and uniformly cover substrates as large as 3-in across at rates exceeding 1 A/s. Maintaining film composition very close to stoichiometry is essential for obtaining films with good superconducting properties and surface morphology. Optimum films have critical currents of 1 MA/sq cm at 77 K. Measurements of microwave surface resistance based on a stripline resonator indicate low surface resistance for unpatterned YBCO ground planes, but excess loss and a strong power dependence in a patterned center strip.

  1. YBCO thin film evaporation on as-deposited silver film on MgO

    NASA Astrophysics Data System (ADS)

    Azoulay, J.

    1999-11-01

    YBa 2Cu 3O 7- δ (YBCO) thin film was evaporated on as-deposited Ag buffer layer on MgO substrate. A simple, inexpensive vacuum system equipped with one resistively heated source was used. The subsequent heat treatment was carried out under low oxygen partial pressure at a relatively low temperature and short dwelling time. The films thus obtained were characterized for electrical properties using DC four-probe electrical measurements and inspected for structural properties and chemical composition by scanning electron microscopy (SEM). It is shown that YBCO thin film can grow on as-deposited thin silver layer on MgO substrate.

  2. On-line characterization of YBCO coated conductors using Raman spectroscopy methods.

    SciTech Connect

    Maroni, V. A.; Reeves, J. L.; Schwab, G.; Chemical Engineering; SuperPower, Inc.

    2007-04-01

    The use of Raman spectroscopy for on-line monitoring of the production of superconducting YBa2Cu3O6+X (YBCO) thin films on long-length metal tapes coated with textured buffer layers is reported for the first time. A methodology is described for obtaining Raman spectra of YBCO on moving tape exiting a metal-organic-chemical-vapor-deposition (MOCVD) enclosure. After baseline correction, the spectra recorded in this way show the expected phonons of the specific YBCO crystal orientation required for high supercurrent transport, as well as phonons of non-superconducting second-phase impurities when present. It is also possible to distinguish YBCO films that are properly textured from films having domains of misoriented YBCO grains. An investigation of the need for focus control on moving tape indicated that focusing of the laser on the surface of the highly reflective YBCO films exiting the MOCVD enclosure tends to produce aberrant photon bursts that swamp the Raman spectrum. These photon bursts are very likely a consequence of optical speckle effects induced by a combination of surface roughness, crystallographic texture, and/or local strain within the small grain microstructure of the YBCO film. Maintaining a slightly out-of-focus condition provides the best signal-to-noise ratio in terms of the obtained Raman spectra. In addition to examining moving tape at the post-MOCVD stage, Raman spectra of the film surface can also be recorded after the oxygen anneal performed to bring the YBCO to the optimum superconducting state. Consideration is given to data processing methods that could be adapted to the on-line Raman spectra to allow the tagging of out-of-specification tape segments and, at a more advanced level, feedback control to the MOCVD process.

  3. Thermal stability of NdBCO/YBCO/MgO thin film seeds

    NASA Astrophysics Data System (ADS)

    Volochová, D.; Kavečanský, V.; Antal, V.; Diko, P.; Yao, X.

    2016-04-01

    Thermal stability of the Nd1+x Ba2-x Cu3O7-δ (Nd-123 or NdBCO) thin films deposited on MgO substrate, with YBa2Cu3O7-δ (Y-123 or YBCO) buffer layer (NdBCO/YBCO/MgO thin film), has been experimentally studied in order to determine the optimal film thickness acting as seed for bulk YBCO growth. YBCO bulk superconductors with Y2BaCuO5 (Y-211) and CeO2 addition were prepared by the top seeded melt growth process in a chamber furnace using NdBCO/YBCO/MgO thin film seeds of different thicknesses (200-700 nm with 20 nm YBCO buffer layer) and different maximum temperatures, T max. The maximum temperatures varied in the range of 1040 °C-1125 °C. The highest thermal stability 1118 °C was observed in the case of NdBCO/YBCO/MgO thin film of 300 nm thickness. These results are corroborated with differential scanning calorimetry and high temperature x-ray diffraction measurements, as well as microstructure observations.

  4. Relationship between intrinsic surface resistance and critical current density of YBCO thin films with various thickness

    NASA Astrophysics Data System (ADS)

    Nakagawa, K.; Nakayama, S.; Saito, A.; Ono, S.; Kai, H.; Mukaida, M.; Honma, T.; Ohshima, S.

    2010-11-01

    We investigated the relationship between the intrinsic surface resistance (Rsint) and critical current density (Jc) of YBa2Cu3Oy (YBCO) film thinner than the penetration depth (λL). The measured YBCO films were deposited on CeO2-buffered r-cut Al2O3 substrates by the pulsed laser deposition method. The thicknesses of these films were 300, 200, and 100 nm, respectively. The Rsint means the surface resistance of YBCO film removing the loss by the impedance of the substrates. The effective surface resistance (Rseff) including the impedance of the substrate and the Jc of each YBCO film were measured using the dielectric resonator method at 21.8 GHz and the inductive method. We calculated Rsint by using phenomenological expressions and the Rseff value. The Rsint values of each YBCO film were almost the same in the measured temperature region. As a result, we found that Rsint was in inverse proportion to the Jc of YBCO film thinner than λL.

  5. Correlation of AC Loss Data from Magnetic Susceptibility Measurements with YBCO Film Quality (Postprint)

    DTIC Science & Technology

    2012-02-01

    excimer laser operating at the KrF, 248 nm , wavelength. Substrates included LaAlO3 ( 100 ) and SrTiO3 ( 100 ) single crystal substrates as well as buffered...AFRL-RZ-WP-TP-2012-0100 CORRELATION OF AC LOSS DATA FROM MAGNETIC SUSCEPTIBILITY MEASUREMENTS WITH YBCO FILM QUALITY (POSTPRINT) Paul N...CORRELATION OF AC LOSS DATA FROM MAGNETIC SUSCEPTIBILITY MEASUREMENTS WITH YBCO FILM QUALITY (POSTPRINT) 5a. CONTRACT NUMBER In-house 5b. GRANT

  6. Properties of boron-doped ZnO thin films grown by using MOCVD

    NASA Astrophysics Data System (ADS)

    Choi, In-Hwan

    2013-11-01

    Boron-doped ZnO thin films were prepared by using metal organic chemical-vapor deposition (MOCVD) with diethyl zinc and water as precursors and B2H6 as the dopant gas. The effects of the flow rates of H2O and B2H6 on the growth and the electrical properties of boron-doped ZnO thin film were investigated. The maximum carrier concentration and mobility and the minimum resistivity obtained under these experimental conditions were 7 × 1020 /cm3, 42 cm2 /V·sec and 4 × 10-4 Ω·cm, respectively, at room temperature. The electrical properties, growth rates, transmittances, and surface morphologies of the ZnO:B films grown using MOCVD are strongly affected by growth conditions such as the relative flow rates of the precursors and dopant gases and the chamber pressure, and these effects are discussed in detail in this article.

  7. Effects of deposition conditions on the phase formation of YBCO films prepared by spray pyrolysis method

    NASA Astrophysics Data System (ADS)

    Kim, Ho-Jin; Joo, Jinho; Park, Shin-Geun; Hong, Suck-Kwan; Lee, Sun-Wang; Lim, Sun-Weon; Hong, Gye-Won; Lee, Hee-Gyoun

    2006-10-01

    YBa2Cu3Oy superconducting films were deposited on LaAlO3(1 0 0) single crystal substrates by spray pyrolysis method. Two types of ultrasonic and concentric nebulizer were used in order to generate fine droplets of metal-inorganic precursor solution. c-Axis oriented films were obtained at deposition temperature of 750-850 °C and at working pressures of 100 Torr and 500 Torr. In case of ultrasonic nebulizer, the films showed rough surface morphology due to the presence of enormous droplets, whereas smooth and dense films were obtained for concentric nebulizer. The good c-axis oriented YBCO films were formed at the wide range of the oxygen partial pressure. Oxygen which is generated via the decomposition of nitrate precursors is considered to participate in the formation reaction of YBCO film. Microstructures of YBCO films varied depending on oxygen partial pressure and rod-like grains were appeared when the oxygen partial pressure was lower than 30 Torr. YBCO films were deposited epitaxially on LAO(1 0 0) substrate. Δϕ of in-plane and Δω of out-of-plane texture were measured as 3.3° and 1.0°, respectively. A transport Jc value of 0.50 MA/cm2 at 77 K and self-field was achieved for the YBCO film deposited on LaAlO3(1 0 0) single crystal substrate.

  8. Over-current carrying characteristics of rectangular-shaped YBCO thin films prepared by MOD method

    NASA Astrophysics Data System (ADS)

    Hotta, N.; Yokomizu, Y.; Iioka, D.; Matsumura, T.; Kumagai, T.; Yamasaki, H.; Shibuya, M.; Nitta, T.

    2008-02-01

    A fault current limiter (FCL) may be manufactured at competitive qualities and prices by using rectangular-shaped YBCO films which are prepared by metal-organic deposition (MOD) method, because the MOD method can produce large size elements with a low-cost and non-vacuum technique. Prior to constructing a superconducting FCL (SFCL), AC over-current carrying experiments were conducted for 120 mm long elements where YBCO thin film of about 200 nm in thickness was coated on sapphire substrate with cerium oxide (CeO2) interlayer. In the experiments, only single cycle of the ac damping current of 50 Hz was applied to the pure YBCO element without protective metal coating or parallel resistor and the magnitude of the current was increased step by step until the breakdown phenomena occurred in the element. In each experiment, current waveforms flowing through the YBCO element and voltage waveform across the element were measured to get the voltage-current characteristics. The allowable over-current and generated voltage were successfully estimated for the pure YBCO films. It can be pointed out that the lower n-value trends to bring about the higher allowable over-current and the higher withstand voltage more than tens of volts. The YBCO film having higher n-value is sensitive to the over-current. Thus, some protective methods such as a metal coating should be employed for applying to the fault current limiter.

  9. Optimization of GaN thin films via MOCVD

    NASA Technical Reports Server (NTRS)

    Dickens, Corey; Wilson, Sylvia L.

    1995-01-01

    A unique characteristic of every semiconductor is the amount of energy required to break an electron bond in the lowest band of allowed states, the valence band. The energy necessary to set an electron free and allow it to conduct in the material is termed the energy gap (Eg). Semiconductors with wide bandgap energies have been shown to possess properties for high power, high temperature, radiation resistance damage, and short wavelength optoelectronic applications. Gallium nitride, which has a wide gap of 3.39 eV, is a material that has demonstrated these characteristics. Various growth conditions are being investigated for quality gallium nitride heteroepitaxy growth via the technique of low pressure metal organic chemical vapor deposition (MOCVD) that can be used for device development.

  10. Detectors of Infrared Radiation Based on High T(c) Superconducting YBCO Films

    DTIC Science & Technology

    1988-02-23

    of the YBCO films. Second, the best (epitaxial) super- conducting YBCO films are grown on the SrTiO3 substrates, which may be disadvantageous for...sintered pellets, thin films, single crystals and fibers. We have grown thin BCSCO films on SrTiO3 substrates( 3 ); they showed zero resistance at Tc...is a "line" .., compound - i.e. it forms at nearly exact stoichiometry composition. As it grows epitaxially on the (001) face of SrTiO3 substrate, it

  11. Far-infrared Hall Effect in YBCO films

    NASA Astrophysics Data System (ADS)

    Grayson, M.; Rigal, L.; Cerne, J.; Schmadel, D. C.; Drew, H. D.; Kung, P.-J.

    2001-03-01

    In order to gain insight into the so-called "anomalous Hall effect" in Hi Tc superconductors(T.R. Chien, D.A. Brawner, Z.Z. Wang, and N.P. Ong, PRB 43, 6242(1991).) we explore Hall measurements at far-infrared (FIR) frequencies and study the temperature dependence. We separately measure the real and imaginary parts of the magneto-optical response of YBCO thin films to polarized FIR light (15-250 cm-1). The induced rotation of linearly polarized light tells us the real part of the Faraday angle, Re[θ_F(ω)], and the induced dichroism of circularly polarized light tells us Im[θ_F(ω)]. We can then deduce the complex Hall angle without resorting to Kramers-Kronig (K-K) analysis. Since both the Hall angle and the Faraday angle obey sum rules, we can compare to higher frequencies(Cerne, et al., invited talk) and determine additional information about the spectral response at intermediate frequencies. The consistency of these results is verified with K-K analysis.

  12. Effects of deposition rate and thickness on the properties of YBCO films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Shi, D. Q.; Ko, R. K.; Song, K. J.; Chung, J. K.; Choi, S. J.; Park, Y. M.; Shin, K. C.; Yoo, S. I.; Park, C.

    2004-02-01

    YBCO films with various thicknesses from 100 nm to 1.6 µm were deposited on single crystal SrTiO3 substrates by pulsed laser deposition (PLD). The effects of thickness and deposition rate—by means of controlling the pulsed laser frequency—on the critical current density (Jc) were studied. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to examine the orientation, crystallization and surface quality. The amount of a-axis YBCO component evaluated from the ratio of XRD chi-scan intensities of the a-axis and c-axis for the YBCO (102) plane increased as the YBCO film became thicker. SEM was used to analyse the surface of YBCO film, and it was shown that the surface of YBCO film became rougher with increasing thickness. There were many large singular outgrowths and networks of outgrowths on the surface of the YBCO films with thickness greater than 0.4 µm. The increased amount of a-axis YBCO component and the coarse microstructure of the thick YBCO film caused degradation of Jc with increasing thickness.

  13. YBCO and LSMO nano-films and sandwiches prepared by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Nurgaliev, T.; Mateev, E.; Blagoev, B.; Miteva, S.; Neshkov, L.; Strbik, V.; Uspenskaya, L. S.; Benacka, S.; Chromik, S.; Nedkov, I.

    2010-06-01

    DC and RF magnetron sputtering techniques were used for growing nano-films (t<100 nm) of high temperature superconducting (HTS) YBa2Cu3O7 (YBCO) and ferromagnetic (FM) manganite La0.7Sr0.3Mn03 (LSMO) materials on LaAlO3 (LAO) and Al2O3 (ALO) substrates as well as for preparing of single-, double- and three-layer structures in different areas of the same substrates. The procedure allowed growing of structures on LAO substrates where the critical temperature of YBCO thin film components was more than 84 K. The LSMO films grown ALO substrates were ferromagnetic while the YBCO films grown on LSMO/ALO did not demonstrate superconductivity.

  14. The quest towards epitaxial BaMgF4 thin films: exploring MOCVD as a chemical scalable approach for the deposition of complex metal fluoride films.

    PubMed

    Battiato, Sergio; Deschanvres, Jean-Luc; Roussel, Hervé; Rapenne, Laetitia; Doisneau, Béatrice; Condorelli, Guglielmo G; Muñoz-Rojas, David; Jiménez, Carmen; Malandrino, Graziella

    2016-11-28

    Conventional and Pulsed Liquid Injection MOCVD processes (C-MOCVD and PLI-MOCVD) have been explored as synthetic routes for the growth of BaMgF4 on Si (100) and single crystalline SrTiO3 (100) substrates. For the two applied approaches, the volatile, thermally stable β-diketonate complexes Ba(hfa)2tetraglyme and Mg(hfa)2(diglyme)2(H2O)2 have been used as single precursors (C-MOCVD) or as a solution multimetal source (PLI-MOCVD). Structural characterization through X-ray diffraction (XRD) measurements and transmission electron microscopy (TEM) analyses confirmed the formation of epitaxial BaMgF4 films on SrTiO3 substrates. Energy dispersive X-ray (EDX) analyses have been used to confirm composition and purity of deposited films. The impact of process parameters on film properties has been addressed, highlighting the strong influence of precursor ratio, deposition temperature and oxygen partial pressure on composition, microstructure and morphology of the films. Both methods appear well suited for the growth of the BaMgF4 phase, but while PLI-MOCVD yields a more straightforward control of the precursor composition that reflects on film stoichiometry, C-MOCVD provides easier control of the degree of texturing as a function of temperature.

  15. High Critical Current in Metal Organic Derived YBCO Films

    DTIC Science & Technology

    2010-10-31

    Report 3 BACKGROUND The Second Generation (2G) high temperature superconducting (HTS) YBCO wire is a versatile, potentially transformational...transformers, fault current limiters, superconducting magnetic energy storage, and power transmission lines [ 1 ] require improvement in the performance of 2G...commercialization of 2G superconducting wire. The obvious route to higher Ic is to increase the thickness, t, of the YBa2Cu3O7-x (YBCO) layer

  16. Enhanced pinning in YBCO films with BaZrO.sub.3 nanoparticles

    DOEpatents

    Driscoll, Judith L.; Foltyn, Stephen R.

    2010-06-15

    A process and composition of matter are provided and involve flux pinning in thin films of high temperature superconductive oxides such as YBCO by inclusion of particles including barium and a group 4 or group 5 metal, such as zirconium, in the thin film.

  17. Unique nanostructural features in Fe, Mn-doped YBCO thin films

    NASA Astrophysics Data System (ADS)

    Meledin, A.; Turner, S.; Cayado, P.; Mundet, B.; Solano, E.; Ricart, S.; Ros, J.; Puig, T.; Obradors, X.; Van Tendeloo, G.

    2016-12-01

    An attempt to grow a thin epitaxial composite film of YBa2Cu3O7-δ (YBCO) with spinel MnFe2O4 (MFO) nanoparticles on a LAO substrate using the CSD approach resulted in a decomposition of the spinel and various doping modes of YBCO with the Fe and Mn cations. These nanostructural effects lead to a lowering of T c and a slight J c increase in field. Using a combination of advanced transmission electron microscopy (TEM) techniques such as atomic resolution high-angle annular dark field scanning TEM, energy dispersive x-ray spectroscopy and electron energy-loss spectroscopy we have been able to decipher and characterize the effects of the Fe and Mn doping on the film architecture. The YBaCuFeO5 anion-deficient double perovskite phase was detected in the form of 3D inclusions as well as epitaxially grown lamellas within the YBCO matrix. These nano-inclusions play a positive role as pinning centers responsible for the J c/J sf (H) dependency smoothening at high magnetic fields in the YBCO-MFO films with respect to the pristine YBCO films.

  18. Continued improvment of large area, in situ sputter deposition of superconducting YBCO thin films

    NASA Technical Reports Server (NTRS)

    Truman, J. K.; White, W. R.; Ballentine, P. H.; Mallory, D. S.; Kadin, A. M.

    1993-01-01

    The deposition of thin films of superconducting YBa2Cu3O7-x onto substrates of up to 3-in diameter by an integrated off-axis sputtering is reported. The substrate is located above the center of an 8-in-diameter YBCO planar target, and, in conjunction with a negative ion shield, negative ion effects are avoided. A large radiant heater provides backside, noncontact heating of the bare substrates. YBCO films have been grown on polished 1-cm2 MgO and LaAlO3 substrates with Tc = 90 K or greater, Jc = 2.5 x 10 exp 6 A/sq cm or greater at 77 K, and microwave surface resistance Rs less than 0.4 micro-ohm at 77 K and 10 GHz. The films have a very smooth surface morphology. Uniformity data for LaAlO3 substrates are less than +/-5 percent in Rs. Thickness uniformity results for 3-in substrates indicate less than 10 percent variation. The growth of epitaxial insulating films for use with YBCO films and application of the YBCO films in microwave devices are briefly discussed.

  19. MOCVD of zirconium oxide thin films: Synthesis and characterization

    NASA Astrophysics Data System (ADS)

    Torres-Huerta, A. M.; Domínguez-Crespo, M. A.; Ramírez-Meneses, E.; Vargas-García, J. R.

    2009-02-01

    The synthesis of thin films of zirconia often produces tetragonal or cubic phases, which are stable at high temperatures, but that can be transformed into the monoclinic form by cooling. In the present study, we report the deposition of thin zirconium dioxide films by metalorganic chemical vapor deposition using zirconium (IV)-acetylacetonate as precursor. Colorless, porous, homogeneous and well adherent ZrO 2 thin films in the cubic phase were obtained within the temperature range going from 873 to 973 K. The deposits presented a preferential orientation towards the (1 1 1) and (2 2 0) planes as the substrate temperature was increased, and a crystal size ranging between 20 and 25 nm. The kinetics is believed to result from film growth involving the deposition and aggregation of nanosized primary particles produced during the CVD process. A mismatch between the experimental results obtained here and the thermodynamic prediction was found, which can be associated with the intrinsic nature of the nanostructured materials, which present a high density of interfaces.

  20. MOCVD growth of CdO very thin films: Problems and ways of solution

    NASA Astrophysics Data System (ADS)

    Huerta-Barberà, Adelaida; Guia, Lluís Manel; Klymov, Oleksii; Marín-Borrás, Vicente; Martínez-Tomás, Carmen; Tamayo-Arriola, Julen; Kurtz, Alejandro; Montes Bajo, Miguel; Muñoz, Elias; Hierro, Adrian; Muñoz-Sanjosé, Vicente

    2016-11-01

    In this paper the growth of CdO by the MOCVD technique at atmospheric pressure has been studied in order to achieve very thin films of this material on r-sapphire substrates. The growth evolution of these films was discussed and the existence of a threshold thickness, below which island-shaped structures appear, was demonstrated. Some alternatives to reduce this threshold thickness have been proposed in the frame of the analysis of the crystal growth process. The morphology and structural properties of the films were analyzed by means of SEM and HRXRD. High-quality flat CdO samples were achieved with thicknesses up to 20 nm, which is five times thinner than the values previously reported in the literature.

  1. Superconducting YBCO thin film on multicrystalline Ag film evaporated on MgO substrate

    NASA Astrophysics Data System (ADS)

    Azoulay, Jacob; Verdyan, Armen; Lapsker, Igor

    Superconducting YBa 2Cu 3O 7-δ films were grown by resistive evaporation on multicrystalline silver film which was evaporated on MgO substrate. A simple inexpensive vacuum system equipped with resistively heated boat was used for the whole process. Silver film was first evaporated on MgO substrate kept at 400°C during the evaporation after which with no further annealing a precursor mixture of yttrium small grains and Cu and BaF2 in powder form weighed in the atomic proportion to yield stoichiometric YBa 2Cu 3O 7 was evaporated. The films thus obtained were annealed at 740°C under low oxygen partial pressure of about 1Pa for 30 minutes to form the superconducting phase. X-ray diffraction and scanning electron microscopy techniques were used for texture and surface analysis. Electrical properties were determined using a standard dc four-probe for electrical measurements. The physical and electrical properties of the YBCO films are discussed in light of the fact that X-ray diffraction measurements done on the silver film have revealed a multicrystalline structure

  2. Homogenous Crack-Free Large Size YBCO/YSZ/Sapphire Films for Application

    NASA Astrophysics Data System (ADS)

    Almog, B.; Azoulay, M.; Deutscher, G.

    2006-09-01

    YBa2Cu3O7-δ (YBCO) films grown on Sapphire are highly suitable for applications. The production of large size (2-3″) homogeneous, thick (d ⩾ 600nm) films of high quality is of major importance. We report the growth of such films using a buffer layer of Yttrium-stabilized ZrO2(YSZ). The films are highly homogeneous and show excellent mechanical properties. They exhibit no sign of cracking even after many thermal cycles. Their critical thickness exceeds 1000nm. However, because of the large lattice mismatch there is a decrease in the electric properties(increases Rs, decreases jc).

  3. Design of a Cryogen Free Cryo-flipper using a High Tc YBCO Film

    NASA Astrophysics Data System (ADS)

    Parnell, S. R.; Kaiser, H.; Washington, A. L.; Li, F.; Wang, T.; Baxter, D. V.; Pynn, R.

    It is well-known that the Meissner effect in superconducting materials can be used to provide a well-defined non- adiabatic magnetic field transition that can be utilised to produce an efficient white beam neutron spin flipper. Typically these devices utilise niobium and hence require continuous use of liquid helium in order to maintain the device tem- perature. The use of high Tc materials removes the need for cryogens and has been explored previously and shown to provide efficient flipping of the neutron spin. Improvements in thin high Tc films over the past few years make these materials even more attractive. Here we present a design using a 350-nm-thick YBCO film capped with 100 nm of gold on a 78 x 100 x 0.5 mm sapphire substrate (Theva, Germany). The apparatus is compact (200 mm in length along the neutron beam), consisting of an oxygen-free high-conductivity copper frame, which holds the YBCO film and is mounted to the cold finger of a closed-cycle refrigerator. The part of the vacuum chamber, where the YBCO film is located, is ≈ 50 mm wide, which allows us to minimise the distance from the film to the external magnets. This distance is 26 mm on each side. The details of the guide field design are also discussed. In this design, the maximum neutron beam size that can be used is 40 × 40 mm2 and we can easily switch from a vertical to a horizontal guide field on either side of the YBCO film.

  4. MOCVD-growth of thin zinc oxide films from zinc acetylacetonate and air

    NASA Astrophysics Data System (ADS)

    Pflitsch, Christian; Nebatti, Abdelkader; Brors, Georg; Atakan, Burak

    2012-06-01

    The metalorganic chemical vapour deposition (MOCVD) of thin zinc oxide films on borosilicate glass and silicon substrates in a hot-wall CVD-reactor (HWR) was studied. Zinc acetylacetonate (Zn(acac)2) and air were used as precursors. The aim of this work was to optimize the deposition parameters, such as pressure and deposition temperature, with respect to the film quality, structure, and homogeneity. Most experiments were performed at atmospheric pressure; this approach avoids the usage of an expensive vacuum system. It turned out that polycrystalline zinc oxide is grown at deposition temperatures above 613 K. Above 823 K, they additionally are c-axis orientated. At atmospheric pressure and lower temperature (<773 K) the film deposition is homogeneously over the whole tube furnace while at higher temperature inhomogeneous film growth and particle formation are observed, indicating a shift of the growth mechanism to the diffusion controlled regime. Although the homogeneity is improved by using higher flow velocities at atmospheric pressure, particle growth cannot be suppressed. Only at reduced pressure, which was 200 mbar in the present case, the deposition at 823 K is kinetically controlled and without particle formation, resulting in the homogeneous growth of well adhering ZnO films with c-axis orientation.

  5. Microstructure of YBCO thin films prepared by TFA-MOD method

    NASA Astrophysics Data System (ADS)

    Nagino, I.; Matsumoto, K.; Adachi, H.; Miyata, S.; Yoshizumi, M.; Izumi, T.; Shiohara, Y.

    2010-11-01

    The microstructure of the recently developed coated conductors was investigated by using electron back scatter diffraction pattern (EBSP). We prepared TFA (trifluoroacetates)-MOD (metal organic deposition) derived YBa2Cu3O7-x (YBCO) films on CeO2/LaMnO3/IBAD-MgO/Gd2Zr2O7/Hastelloy C276 substrates of 1 cm-width. The EBSP observation showed that there was a difference of surface microstructure between the midsection and the end of TFA-MOD YBCO film layer in the direction of width. This is attributed not to the local difference of the biaxial texture of CeO2 top layer but to the local difference of growth condition during TFA-MOD process.

  6. Epitaxial growth of YBCO films on metallic substrates buffered with yttria-stabilized zirconia

    NASA Astrophysics Data System (ADS)

    Ma, B.; Li, M.; Fisher, B. L.; Koritala, R. E.; Balachandran, U.

    2002-05-01

    Biaxially textured yttria-stabilized zirconia (YSZ) films were grown on polished Hastelloy C (HC) substrates by ion-beam-assisted deposition (IBAD) and electron-beam evaporation. A water-cooled sample stage was used to dissipate heat generated by the Kaufman ion source and to maintain the substrate temperature below 100 °C during deposition. X-ray pole figures were used for texture analysis. In-plane texture measured from the YSZ (111) φ-scan full-width-at-half-maximum (FWHM) was 13.2° and out-of-plane texture from the YSZ (002) ω-scan FWHM was 7.7°. In-plane texture improved with lowered substrate temperature during IBAD deposition. RMS surface roughness of 3.3 nm was measured by atomic force microscopy. A thin CeO2 buffer layer (≈10 nm) was deposited to improve the lattice match between the YSZ and YBCO films and to enhance the biaxial alignment of YBCO films. YBCO films were epitaxially grown on IBAD-YSZ buffered HC substrates with and without CeO2 buffer layers by pulsed laser deposition (PLD). In-plane texture FWHMs of 12° and 9° were observed for CeO2 (111) and YBCO (103), respectively. Tc=90 K, with sharp transition, and Jc values of ≈2×106 A/cm2 at 77 K in zero field were observed on 0.5-μm-thick, 5-mm-wide, and 1-cm-long samples.

  7. Effect of Deposition Temperature on the Properties of TIO2 Thin Films Deposited by Mocvd

    NASA Astrophysics Data System (ADS)

    Khalifa, Zaki S.

    2016-02-01

    Crystal structure, microstructure, and optical properties of TiO2 thin films deposited on quartz substrates by metal-organic chemical vapor deposition (MOCVD) in the temperature range from 250∘C to 450∘C have been studied. The crystal structure, thickness, microstructure, and optical properties have been carried out using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), atomic force microscope (AFM), and UV-visible transmittance spectroscopy, respectively. XRD patterns show that the obtained films are pure anatase. Simultaneously, the crystal size calculated using XRD peaks, and the grain size measured by AFM decrease with the increase in deposition temperature. Moreover, the texture of the films change and roughness decrease with the increase in deposition temperature. The spectrophotometric transmittance spectra have been used to calculate the refractive index, extinction coefficient, dielectric constant, optical energy gap, and porosity of the deposited films. While the refractive index and dielectric constant decrease with the increase of deposition temperature, the porosity shows the opposite.

  8. Crystallinity of YBCO thin films on an MgO substrate using an amorphous buffer layer deposited at a low temperature

    NASA Astrophysics Data System (ADS)

    Nakamura, Y.; Kudo, S.; Mukaida, M.; Ohshima, S.

    2002-10-01

    We have investigated crystallinity of YBCO films on an MgO substrate using an amorphous buffer layer. The evaluated films are obtained as follows: an amorphous YBCO buffer layer is deposited on the MgO substrate at a low temperature (200 °C); and then, an amorphous buffer layer is crystallized by the thermal annealing at a high temperature from 910 to 1030 °C; finally, main YBCO film is grown on the crystalline YBCO buffer layer over the MgO substrate. A significant improvement in the crystalline quality of the YBCO films was achieved, when amorphous buffer layers of 100 nm in thickness were crystallized by annealing temperature 950 °C and then annealing is continued for 1 h in air atmosphere. We confirmed that YBCO films grown on a well-crystallized buffer layer had better crystallinity than ones on bare MgO substrate, which has substantially large lattice mismatch.

  9. An AFM study of the morphology and local mechanical properties of superconducting YBCO thin films

    NASA Astrophysics Data System (ADS)

    Soifer, Ya. M.; Verdyan, A.; Azoulay, J.; Kazakevich, M.; Rabkin, E.

    2004-02-01

    The morphology of thin superconducting YBCO films deposited on sapphire and on SrTiO 3 was studied with the help of atomic force and scanning electron microscopies. The intrinsic mechanical properties in the flat, particles-free and chemically homogeneous regions of the films were determined with the aid of nanoindenting atomic force microscope. Also the microscopy studies revealed the difference in topography of the films, the nanohardness and Young’s modulus of two films were very close to each other. For the indents shallower than 0.2 of the film thickness the Young’s modulus and hardness of the films on two different substrates converged to the values of 210 and 8.5 GPa, respectively. The possible deformation mechanisms determining the localized deformation of intrinsically brittle ceramic films are discussed.

  10. Structural and optical properties of anatase TiO2 heteroepitaxial films prepared by MOCVD

    NASA Astrophysics Data System (ADS)

    Zhao, Wei; Feng, Xianjin; Xiao, Hongdi; Luan, Caina; Ma, Jin

    2016-11-01

    High-quality single-crystal anatase TiO2(a-TiO2) thin films have been obtained on SrTiO3 (STO) substrates using the metalorganic chemical vapor deposition (MOCVD) method. The optimal preparation process was explored. The lattice structure and epitaxial relationship were investigated by X-ray diffraction (XRD, both θ-2θ and Φ scans) and transmission electron microscopy (TEM). The results indicated that the film prepared at 550 °C with the Ti precursor molar flow rate of 4×10-7 mol/min had the best single crystalline quality, for which a clear epitaxial relationship of a-TiO2 (001)||STO (100) with a-TiO2 [100]||STO [001bar] could be inferred. The elemental composition and proportion were studied by the X-ray photoelectron spectroscopy (XPS) method, which proved the deposited film approximated stoichiometric TiO2. The samples showed high transparency of 70-80% in the visible range.

  11. Magnetization of YBCO film with ac travelling magnetic waves of relatively short wavelengths

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Coombs, Tim

    2017-02-01

    The magnetizations of the YBCO film with ac travelling magnetic waves of relatively short wavelengths were studied. The results have verified that the reported "intermediate value" of the superconducting current density [Wang et al., Appl. Phys. Lett. 104(3), 032602 (2014)] was caused by the existence of multiple transition regions in the sample: the magnetic poles induce ±JC in the pole regions, which produces two transition regions within each wavelength λ ( +JC→-JC→+JC , and vice versa, while the symbol → indicates the transition region). The current densities in the transition region are with intermediate values, which are smaller than the critical value. In case of relatively short wavelength, there are multiple transition regions, which occupy a large fraction of the YBCO sample with intermediate current values. Moreover, the wavelike current distributions might help explain the flux transportation and dc output voltage in HTS flux pump.

  12. Performance of a polarised neutron cryo-flipper using a high TcYBCO film

    NASA Astrophysics Data System (ADS)

    Parnell, S. R.; Washington, A. L.; Kaiser, H.; Li, F.; Wang, T.; Hamilton, W. A.; Baxter, D. V.; Pynn, R.

    2013-09-01

    It is well-known that the Meissner effect in superconducting materials can be used to provide a well-defined, non-adiabatic, magnetic-field transition. This can be utilised to produce a highly efficient neutron spin flipper that is suitable for use with neutrons of multiple wavelengths. Devices of this type using superconducting niobium have been deployed on neutron diffractometers for several decades but have required liquid helium to maintain the correct temperature. The use of high Tc materials, which removes the need for cryogens and simplifies the device, was first explored by Fitzsimmons et al. in [1]. In this communication, we describe a π flipper which uses commercially available films consisting of a 350-nm-thick YBCO film capped with 100 nm of gold on a 78×100×0.5 mm sapphire substrate. We discuss the design and performance of this device. The apparatus is compact (≈200 mm in length along the neutron beam), consisting of an oxygen-free high-conductivity copper frame, which holds the YBCO film and is mounted to the cold finger of a closed-cycle He refrigerator. The part of the vacuum chamber, where the YBCO film is located, is 5 cm wide, which allows us to minimise the distance from the film to the magnetic guide fields. Negligible small angle neutron scattering is observed from the flipper and its transmission is measured to be greater than 98.5% over a wide band of neutron wavelengths. In this design, the maximum neutron beam size that can be used is 42×42 mm2 and we can easily switch from a vertical to a horizontal guide field (both perpendicular to the neutron beam) on either side of the YBCO film. Data are reported for neutron wavelengths between 4 and 8.5 Å and flipping efficiencies under a variety of conditions are discussed. Under optimum conditions an efficiency of 99.5±0.3% was achieved for 4-8 Å neutrons on a pulsed source and 99.4±0.5% was achieved at a monochromatic source using a neutron wavelength of 4.2 Å.

  13. An advanced low-fluorine solution route for fabrication of high-performance YBCO superconducting films

    NASA Astrophysics Data System (ADS)

    Chen, Yuanqing; Wu, Chuanbao; Zhao, Gaoyang; You, Caiyin

    2012-06-01

    We have developed a new low-fluorine solution consisting of non-fluorine (F-free) barium and copper salts, and fluorine-containing yttrium trifluoroacetate. Using this new low-fluorine solution, the BaCO3 phase was avoided in the pyrolyzed precursor films. Instead, CuO, Y and Ba fluorides (YF3 and BaF2) were formed in the precursor films pyrolyzed at 450 °C, which was the same as when an All-TFA solution (prepared using Y, Ba, Cu trifluoroacetates as precursors) or other fluorine-reduced solutions were used. This new kind of low-fluorine solution has only 23% of the fluorine content in an All-TFA solution, and the fluorine content was lower than any other fluorine-reduced solution. Thus, rapid production of YBa2Cu3O7-x (YBCO) films can be easily realized. Using a heating rate of 10 °C min-1 in the pyrolysis process, a high critical current density (Jc) of 5 MA cm-2 (at 77 K, 0 T) was obtained in YBCO films fabricated on LaAlO3 (LAO) single crystal substrates from the new starting solution.

  14. Study of high {Tc} superconducting thin films grown by MOCVD. Final report, July 1, 1986--April 30, 1990

    SciTech Connect

    Erbil, A.

    1990-12-31

    Work is described briefly, which was carried out on development of techniques to grow metal-semiconductor superlattices (artificially layered materials) and on the copper oxide based susperconductors (naturally layered materials). The current growth technique utilized is metalorganic chemical vapor deposition (MOCVD). CdTe, PbTe, La, LaTe, and Bi{sub 2}Te{sub 3} were deposited, mostly on GaAs. Several YBa{sub 2}Cu{sub 3}O{sub 7} compounds were obtained with possible superconductivity at temperatures up to 550 K (1 part in 10{sup 4}). YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} and Tl{sub 2}CaBa{sub 2}Cu{sub 2}O{sub y} thin films were deposited by MOCVD on common substrates such as glass.

  15. Enhancement of YBCO thin film thermal stability under 1 ATM oxygen pressure by intermediate Cu2O nanolayer.

    PubMed

    Cheng, L; Wang, X; Yao, X; Wan, W; Li, F H; Xiong, J; Tao, B W; Jirsa, M

    2010-06-10

    The melting process of YBa(2)Cu(3)O(x) (YBCO or Y123) films under an oxygen atmosphere was observed in situ by means of high-temperature optical microscopy. The films were classified by pole figure measurement as c-axis oriented, with two different in-plane orientations (denoted as 0 and 45 degrees). In the 45 degrees-oriented films, electron diffraction and high-resolution transmission electron microscopy (HRTEM) detected an intermediate Cu(2)O nanolayer in the vicinity of the interface. The melting mode and the thermal stability of the YBCO thin films with different in-plane orientations were greatly influenced by oxygen partial pressure. Notably, the thermal stability of the 45 degrees-oriented YBCO films dramatically grew with increasing oxygen partial pressure. We attributed this effect to a change in the intermediate Cu(2)O nanolayer thermal stability. We conclude and suggest that the thermal stability of YBCO films can be significantly enhanced by inserting a Cu(2)O buffer nanolayer.

  16. AFM investigations of the morphology features and local mechanical properties of HTS YBCO thin films

    NASA Astrophysics Data System (ADS)

    Soifer, Yakov M.; Verdyan, Armen; Lapsker, Igor; Azoulay, Jacob

    2004-08-01

    In the paper presented here the application of the atomic force microscope (AFM) is considered for evaluation of hardness and Young's modulus of high Tc superconducting YBCO thin films of different thickness (from 0.05 to 1 μm) grown on unbuffered SrTiO 3 (film I) and on sapphire with a buffer layer of CeO 2 (film II). The best film features a transition temperature Tc of 90 K, critical current density Jc ( H=0) of 3 × 10 7 A/cm 2 at 4.2 K and 2 × 10 6 A/cm 2 at 77 K. The relationship between mechanical properties and microstructure of these films was investigated. It was found that all the films comprised well-defined Cu-rich precipitates of different size and with different density on their surface. For both type of films the hardness was measured to be in the range of 12-18 GPa. The Young's modulus of the films was about 180-200 GPa. The nanoindentation and nanoscratching measurements showed that the mechanical strength of the films studied was determined mainly by mechanical failure and surface defects (secondary phases).

  17. Real-time observation of the melting process of YBCO thin film on MgO substrate

    NASA Astrophysics Data System (ADS)

    J, Hu; X, Yao; L, Rao Q.

    2003-11-01

    In order to study the mechanism of the liquid phase hetero-epitaxial growth, the melting process of YBa2Cu3O7-dgr (YBCO) thin films was observed by high-temperature optical microscopy. During the heating from room temperature to a temperature above the YBCO peritectic temperature (Tp), we surprisingly find that the YBCO thin film with a MgO substrate can be substantially superheated above the Tp of the YBCO oxide (at least 50 °C) at a heating rate of 5 °C min-1. This is a novel superheating phenomenon involved in a peritectic reaction and an oxide material, which is different from one reported in systems of metals and their alloys. After the melting process, x-ray diffraction analysis was performed, which shows that Y2BaCuO5 (Y211) grains are in good alignment on the MgO substrate. The superheating mechanism of the YBCO oxide is discussed.

  18. Growth and conduction mechanism of As-doped p-type ZnO thin films deposited by MOCVD

    SciTech Connect

    Ma, Y.; Gao, Q.; Wu, G.G.; Li, W.C.; Gao, F.B.; Yin, J.Z.; Zhang, B.L.; Du, G.T.

    2013-03-15

    Highlight: ► P-type As-doped ZnO thin films was fabricated by MOCVD after post-growth annealing. ► The formation mechanism of p-ZnO with high hole concentration above 10{sup 19} cm{sup −3} was elucidated. ► Besides As{sub Zn}–2V{sub Zn} complex, C impurities also played an important role in realizing p-ZnO. ► The formations of As{sub O} and O-C-O complex were partially contributed to the p-type ZnO: As films. - Abstract: As-doped p-type ZnO thin films were fabricated by metal organic chemical vapor deposition (MOCVD) after in situ annealing in a vacuum. The p-type conduction mechanism was suggested by the analysis of X-ray photoelectron spectroscopy and ultraviolet photoemission spectroscopy. It was found that most of the As dopants in p-ZnO thin films formed As{sub Zn}–2V{sub Zn} shallow acceptor complex, simultaneously, carbon impurities also played an important role in realizing p-type conductivity in ZnO. Substitutional carbon on oxygen site created passivated defect bands by combining with Ga atoms due to the donor-acceptor pair Coulomb binding, which shifted the valence-band maximum upwards for ZnO and thus increased the hole concentration.

  19. Nano-engineered pinning centres in YBCO superconducting films

    NASA Astrophysics Data System (ADS)

    Crisan, A.; Dang, V. S.; Mikheenko, P.

    2017-02-01

    For practical applications of superconducting materials in applied magnetic fields, artificial pinning centres in addition to natural ones are required to oppose the Lorentz force. These pinning centres are actually various types of defects in the superconductor matrix. The pinning centres can be categorised on their dimension (volume, surface or point) and on their character (normal cores or Δκ cores). Different samples have been produced by Pulsed Laser Deposition, with various thicknesses, temperatures and nanostructured additions to the superconducting matrix. They have been characterized by SQUID Magnetic Properties Measurement System and Physical Properties Measurement System, as well as by Transmission Electron Microscopy (TEM). Correlations between pinning architecture, TEM images, and critical currents at various fields and field orientations will be shown for a large number of YBa2Cu3Ox films with various types and architectures of artificial pinning centres.

  20. In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

    NASA Technical Reports Server (NTRS)

    Singh, R.; Sinha, S.; Hsu, N. J.; Thakur, R. P. S.; Chou, P.; Kumar, A.; Narayan, J.

    1990-01-01

    In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectric having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writting capability, complex device structures like three-terminal hybrid semiconductors/superconductors transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray defraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

  1. In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

    NASA Astrophysics Data System (ADS)

    Singh, R.; Sinha, S.; Hsu, N. J.; Thakur, R. P. S.; Chou, P.; Kumar, A.; Narayan, J.

    1990-04-01

    In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectric having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writting capability, complex device structures like three-terminal hybrid semiconductors/superconductors transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray defraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

  2. In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

    NASA Technical Reports Server (NTRS)

    Singh, R.; Sinha, S.; Hsu, N. J.; Thakur, R. P. S.; Chou, P.; Kumar, A.; Narayan, J.

    1991-01-01

    In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectrics having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writing capability, complex device structures like three terminal hybrid semiconductor/superconductor transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray deffraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

  3. High velocity vortex channeling in vicinal YBCO thin films.

    PubMed

    Puica, I; Lang, W; Durrell, J H

    2012-09-01

    We report on electrical transport measurements at high current densities on optimally doped YBa2Cu3O7-δ thin films grown on vicinal SrTiO3 substrates. Data were collected by using a pulsed-current technique in a four-probe arrangement, allowing to extend the current-voltage characteristics to high supercritical current densities (up to 24 MA cm(-2)) and high electric fields (more than 20 V/cm), in the superconducting state at temperatures between 30 and 80 K. The electric measurements were performed on tracks perpendicular to the vicinal step direction, such that the current crossed between ab planes, under magnetic field rotated in the plane defined by the crystallographic c axis and the current density. At magnetic field orientation parallel to the cuprate layers, evidence for the sliding motion along the ab planes (vortex channeling) was found. The signature of vortex channeling appeared to get enhanced with increasing electric field, due to the peculiar depinning features in the kinked vortex range. They give rise to a current-voltage characteristics steeper than in the more off-plane rectilinear vortex orientations, in the electric field range below approximately 1 V/cm. Roughly above this value, the high vortex channeling velocities (up to 8.6 km/s) could be ascribed to the flux flow, although the signature of ohmic transport appeared to be altered by unavoidable macroscopic self-heating and hot-electron-like effects.

  4. In-plane orientation effect on the melting behaviour of YBCO thin film.

    PubMed

    Tang, Chen Y; Cai, Yan Q; Yao, Xin; Rao, Qun L; Tao, Bo W; Li, Yan R

    2007-02-21

    By means of high-temperature optical microscopy (HTOM), a 60 °C gap in initial melting temperature between two YBa₂Cu₃O(x) (Y123) thin films was found in situ. Using these two films as seeds, liquid phase epitaxy (LPE) dipping experiments showed the same tendency in the melting behaviour. The in-plane orientation was detected by x-ray diffraction (XRD) pole figure. On the basis of results from HTOM, LPE and XRD, it was unveiled that the interface structure has a predominant influence on the melting mode. A semi-coherent interface suppresses not only the melting growth but also the melting nucleation, while an incoherent interface encourages both of them. (In this work, melting of YBCO refers to the peritectic decomposition of Y123.).

  5. Surface Resistance of YBCO Thin Films under High DC Magnetic Fields

    NASA Astrophysics Data System (ADS)

    Ohshima, S.; Kitamura, K.; Noguchi, Y.; Sekiya, N.; Saito, A.; Hirano, S.; Okai, D.

    2006-06-01

    We have studied the magnetic dependence of the surface resistance (Rs) of YBa2Cu3Oy (YBCO) thin films by changing the direction of an applied magnetic field by mean of a micriostrip line resonator method (MLRM). We measured Rs(0), Rs(90) and Rs(45) to which the direction of the applied magnetic field was respectively normal, parallel and at 45° to the film surface. In the low temperature region, (below 40 K), the Rs(0) had low magnetic dependence; however, the Rs(90) and Rs(45) had high magnetic dependence, even below 10 K. We examined the magnetic field dependence of Rs (90) and Rs(0) using the London equation, and found that Rs(90) in the higher temperature region could be mostly explained by the theory.

  6. Detectors of Infrared Radiation Based on High T(c) Superconducting YBCO Films

    DTIC Science & Technology

    1991-06-01

    d4 . mvuAT.OATS 3. AIPOST ’l ’ TE ’OEE FINAL REPORT 1 Dec 87-30 Apr 90 Detectors of Infrared Radiation Based on High T(c) Superconducting YBCO Films...YBa2CU3O7 film on LaAlO3 at 6.8 K biased with 20.6 mA. > .11 --- . I’ M e nsq FW m.. E\\pe of th .5.i.=nl 3(0wnN n UA*. ). l=btototpte vCV ra. dt mdm lenmo ,5,25 ind 9W nj/pu- 4=5mAT=8s’

  7. High velocity vortex channeling in vicinal YBCO thin films

    PubMed Central

    Puica, I.; Lang, W.; Durrell, J.H.

    2012-01-01

    We report on electrical transport measurements at high current densities on optimally doped YBa2Cu3O7−δ thin films grown on vicinal SrTiO3 substrates. Data were collected by using a pulsed-current technique in a four-probe arrangement, allowing to extend the current–voltage characteristics to high supercritical current densities (up to 24 MA cm−2) and high electric fields (more than 20 V/cm), in the superconducting state at temperatures between 30 and 80 K. The electric measurements were performed on tracks perpendicular to the vicinal step direction, such that the current crossed between ab planes, under magnetic field rotated in the plane defined by the crystallographic c axis and the current density. At magnetic field orientation parallel to the cuprate layers, evidence for the sliding motion along the ab planes (vortex channeling) was found. The signature of vortex channeling appeared to get enhanced with increasing electric field, due to the peculiar depinning features in the kinked vortex range. They give rise to a current–voltage characteristics steeper than in the more off-plane rectilinear vortex orientations, in the electric field range below approximately 1 V/cm. Roughly above this value, the high vortex channeling velocities (up to 8.6 km/s) could be ascribed to the flux flow, although the signature of ohmic transport appeared to be altered by unavoidable macroscopic self-heating and hot-electron-like effects. PMID:23482832

  8. MOCVD-derived multilayer Gd0.5Y0.5Ba2Cu3O7-δ films based on a novel heating method

    NASA Astrophysics Data System (ADS)

    Zhao, Ruipeng; Zhang, Fei; Liu, Qing; Xia, Yudong; Lu, Yuming; Cai, Chuanbing; Xiong, Jie; Tao, Bowan; Li, Yanrong

    2017-02-01

    Multilayer Gd0.5Y0.5Ba2Cu3O7-δ (GdYBCO) films have been deposited by the metal organic chemical vapor deposition process on LaMnO3/epitaxial MgO/ion beam assisted deposition (IBAD)-MgO/solution deposition planarization-Y2O3-buffered Hastelloy tapes. The buffered tapes were heated by the Joule effect after applying a heating current (I h) through the Hastelloy metal substrates. For this kind of current heating method, the heating energy is transmitted from the Hastelloy metal substrate to the oxide buffer layers, thereby the surface temperature of the tape will decline with an increase in the thickness of the deposited GdYBCO film if the heating current is unchanged. Therefore, the multilayer GdYBCO film structure where I h was adjusted for each layer was adopted to make sure that the surface temperature was always high enough to deposit purely c-axis oriented GdYBCO films. With this method, four-layer 1000 nm thick GdYBCO films were successfully prepared and the critical current (I c) reached 328 A cm-1 width (77 K, 0 T), corresponding to the critical current density (J c) of 3.28 MA cm-2 (77 K, 0 T).

  9. 10 GHz surface impedance measurements of (Y sub 9 Er)BaCuO films produced by MOCVD, laser ablation, and sputtering

    SciTech Connect

    Luine, J.; Daly, K.; Hu, R.; Kain, A.; Lee, A.; Manasevit, H.; Pettiette-Hall, C.; Simon, R.; St. John, D.; Wagner, M. )

    1991-03-01

    This paper reports on a parallel-plate resonator technique previously used to measure microwave surface resistance R{sub s}(T) extended to also measure absolute penetration depth {lambda}(T). Measurements of both quantities near 10 GHz from 4.2 K to Tc are reported for ErBaCuO thin films produced by metal-organic chemical vapor deposition (MOCVD) and YBaCuO think films produced by laser ablation and single-target off-axis sputtering. All the films were made at TRW. Each production method gives rise to films whose surface resistance is below 1 milliohm at temperatures below 40K. The low temperature penetration depths range from 250 nm for the laser ablation and sputtered films to 800 nm for the MOCVD films. The penetration depths in all cases increase with temperature according to the Gorter-Casimir temperature dependence.

  10. Nanowall pinning for enhanced pinning force in YBCO films with nanofabricated structures

    NASA Astrophysics Data System (ADS)

    Palau, A.; Rouco, V.; Luccas, R. F.; Obradors, X.; Puig, T.

    2014-11-01

    High resolution nanofabrication tools (Focused Ion Beam and Electron Beam Lithography) have been used to fabricate nano-metric milled structures in high critical current YBCO thin films able to further increase their vortex pinning capabilities. We have demonstrated that pinning forces at 77 K and 3 T are increased by a 70-80% by proper nanostructure designs. Model systems with linear trenches and triangular blind antidots of different sizes, distribution and density have been generated and studied. We demonstrate that specific milled nanostructures can increase the total current through the system at expenses of a limited decrease of cross section. We have identified the length of fabricated nano-walls as the main parameter controlling the pinning potential of nanostructures and thus defined the optimised milling conditions and nanostructure morphology to maximise pinning efficiency.

  11. High critical current YBCO thick films by TFA-MOD process

    NASA Astrophysics Data System (ADS)

    Tokunaga, Yoshitaka; Fuji, Hiroshi; Teranishi, Ryo; Shibata, Junko; Asada, Sigenobu; Honjo, Tetsuji; Izumi, Teruo; Shiohara, Yuh; Iijima, Yasuhiro; Saitoh, Takashi

    2003-10-01

    As a method of the fabrication processes of YBa 2Cu 3O 7- x (YBCO), the metalorganic deposition (MOD) process using metal trifluoroacetete (TFA) is considered to be a strong candidate due to its low cost fabrication process for coated conductors with high Jc. In our previous work, a triple coated film with 1 μm in thickness was fabricated on a CeO 2/IBAD-YSZ layer buffered Hastelloy substrate by optimizing the condition of heat treatments such as P H 2O in the multi-coating method [Physica C 378-381 (2002) 1013]. The Jc value of 1.6 MA/cm 2 (77 K in self-field) in this film patterned 100 μm width and the Ic* value of 153 A/cm-width at 77 K in self-field were achieved. In order to obtain a thicker film with high overall Ic* for 1 cm width, the influence of the heat treatment conditions of P H 2O , P O 2, and the temperature in the MOD process was investigated. Subsequently, a 5 times coated film was obtained on a CeO 2/IBAD-Zr 2Gd 2O 7 layer buffered Hastelloy substrate by optimizing the conditions of heating and dip coating. As a result, the overall transport Ic value was improved to 210 A and Jc value of 1.53 MA/cm 2 was obtained (77 K in self-field).

  12. Solid source MOCVD system

    DOEpatents

    Hubert, Brian N.; Wu, Xin Di

    1998-01-01

    A system for MOCVD fabrication of superconducting and non-superconducting oxide films provides a delivery system for the feeding of metalorganic precursors for multi-component chemical vapor deposition. The delivery system can include multiple cartridges containing tightly packed precursor materials. The contents of each cartridge can be ground at a desired rate and fed together with precursor materials from other cartridges to a vaporization zone and then to a reaction zone within a deposition chamber for thin film deposition.

  13. Solid source MOCVD system

    DOEpatents

    Hubert, B.N.; Wu, X.D.

    1998-10-13

    A system for MOCVD fabrication of superconducting and non-superconducting oxide films provides a delivery system for the feeding of metallorganic precursors for multi-component chemical vapor deposition. The delivery system can include multiple cartridges containing tightly packed precursor materials. The contents of each cartridge can be ground at a desired rate and fed together with precursor materials from other cartridges to a vaporization zone and then to a reaction zone within a deposition chamber for thin film deposition. 13 figs.

  14. Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices

    NASA Astrophysics Data System (ADS)

    Kim, Hee-Dong; Yun, Min Ju; Kim, Sungho

    2016-08-01

    The resistive switching phenomena of HfO2 films grown by using metal organic chemical vapor deposition (MOCVD) was studied for the application of resistive random access memory (ReRAM) devices. In the fabricated Pt/HfO2/TiN memory cells, bipolar resistive switching characteristics were observed, and the set and reset states were measured to be as low as 7 μA and 4 μA, respectively, at V READ = 1 V. Regarding the resistive switching performance, stable resistive switching (RS) performance was observed under 40 repetitive dc cycles with small variations of set/reset voltages and the currents and good retention characteristics of over 105 s in both the low-resistance state (LRS) and the high-resistance state (HRS). These results show the possibility of using MOCVDgrown HfO2 films as a promising resistive switching materials for ReRAM applications.

  15. Fabrication of high critical current density superconducting tapes by epitaxial deposition of YBCO thick films on biaxially textured metal substrates

    SciTech Connect

    Goyal, A.; Norton, D.P.; Paranthaman, M.

    1996-12-31

    High critical current density YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) tapes were fabricated by epitaxial deposition on rolling- assisted-biaxially-textured-substrates (RABiTS). The RABiTS technique uses well established, industrially scaleable, thermomechanical processes to impart a strong biaxial texture to a base metal. This is followed by vapor deposition of epitaxial buffer layers to yield chemically and structurally compatible surfaces. Epitaxial YBCO films grown on such substrates have critical current densities approaching 10{sup 6} A/cm{sup 2} at 77K in zero field and have field dependences similar to epitaxial films on single crystal ceramic substrates. Deposited conductors made using this technique offer a potential route for fabricating long lengths of high J{sub c} wire capable of carrying high currents in high magnetic fields and at elevated temperatures.

  16. Y-Ba-Cu-O film deposition by metal organic chemical vapor deposition on buffered metal substrates.

    SciTech Connect

    Selvamanickam, V.; Galinski, G.; DeFrank, J.; Trautwein, C.; Haldar, P.; Balachandran, U.; Lanagan, M.; Chudzik, M.

    1999-10-12

    YBa{sub 2}Cu{sub 3}O{sub 2} (YBCO) films have been deposited on buffered metal substrates by Metal Organic Chemical Vapor Deposition (MOCVD). Cube-textured nickel substrates were fabricated by a thermomechanical process. Epitaxial CeO{sub 2}films were deposited on these substrates by thermal evaporation. Nickel alloy substrates with biaxially-textured Yttria-Stabilized Zirconia (YSZ) buffer layers deposited by Ion Beam Assisted Deposition were also prepared. Highly biaxially-textured YBCO films were deposited by MOCVD on both types of metal substrates. A critical current density greater than 10{sup 5} A/cm{sup 2} at 77 K has been achieved in YBCO films on metal substrates.

  17. Temperature dependence of the dielectric function of laser deposited YBCO thin film at 3392nm

    SciTech Connect

    Walmsley, D.G.; Bade, T.; McCafferty, P.G.; Rea, C.; Dawson, P.; Wallace, R.J.; Bowman, R.M.

    1996-12-31

    The authors have excited surface plasmons in an YBCO thin film at different temperatures using attenuated total reflection of light. The 300nm thick c-axis film was fabricated using pulsed laser deposition onto an MgO (100) substrate with 248nm KrF excimer radiation. Critical temperature of the film was 89.6K and its roughness, as shown by atomic force microscopy, 20nm rms, without droplets over areas of 10 {micro}m x 10{micro}m. The sample was mounted in Otto geometry on a cooled stage which allowed the temperature to be varied between 300K and 70K. An infrared HeNe laser at 3,392nm was used to excite the surface plasmons. The dielectric function of the film was determined between room temperature and 80K. The imaginary part of the dielectric function decreased substantially with reduction in temperature. Results obtained were: {var_epsilon}{sub r} = {minus}24.1 + 0.0013T and {var_epsilon}{sub i} = 7.7 + 0.067T where T is the temperature in kelvin. The ratio {var_epsilon}{sub i}{sup 300}/{var_epsilon}{sub i}{sup 80} at 2.13 is less than the resistance ratio R{sup 300}/R{sup 80} at 2.81. An explanation is offered in terms of two temperature independent mechanisms operative at optical frequencies: enhanced Rayleigh scattering of surface plasmons at grain boundaries and intraband/interband transitions. The real part of the dielectric function, {var_epsilon}{sub r}, was found to be only slightly temperature dependent. It was, however, highly sample dependent when comparison was made with the results of other films, a feature attributed to surface and grain boundary contamination.

  18. MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si

    NASA Astrophysics Data System (ADS)

    Black, Kate; Jones, Anthony C.; Chalker, Paul R.; Gaskell, Jeffrey M.; Murray, Robert T.; Joyce, Tim B.; Rushworth, Simon A.

    2008-03-01

    This paper explores the use of nanostructured zinc oxide (ZnO) films as a compliant buffer layer for the growth of gallium nitride (GaN) on silicon substrates. Thin films of ZnO have been deposited on silicon (1 1 1) substrates by liquid injection metalorganic chemical vapour deposition (MOCVD) using dimethyl zinc-tetrahydrofuran adduct and oxygen. The use of the adduct complex avoids pre-reaction between the dialkyl zinc complex and oxygen which has been observed elsewhere. ZnO films deposited by this method were stoichiometric and of high purity, with no detectable carbon contamination. Films were deposited over a temperature range 350-550 °C, and exhibited a nanowire-like morphology. Subsequent deposition of GaN layers grown by molecular beam epitaxy (MBE) on the ZnO film resulted in the transformation of the nanowires to gallium oxide, accompanied by virtually complete removal of zinc from the layer. A heteroepitaxially oriented ( c-axis) GaN/gallium oxide/silicon structure was produced after the nitride deposition which consisted of characteristic columnar GaN with the GaN[0 0 0 1]||Si [1 1 1]. Selective area electron diffraction of the by-product oxide interlayer showed a polycrystalline-like behaviour that gave rise to a random azimuthal distribution of the GaN grains.

  19. Initial stages of TiO 2 thin films MOCVD growth studied by in situ surface analyses

    NASA Astrophysics Data System (ADS)

    Brevet, A.; Peterlé, P. M.; Imhoff, L.; Marco de Lucas, M. C.; Bourgeois, S.

    2005-02-01

    In situ chemical surface analyses using X-ray photoelectron spectroscopy (XPS) were performed to understand the initial stages of TiO 2 thin-film MOCVD growth. Deposits on Si (1 0 0), a few nanometres thick, were obtained at a fixed temperature of 650 °C and for two different pressures, 2.9 and 0.05 mbar, using titanium tetraisopropoxide (TTIP) as precursor. Pressure lowering led to a higher deposit growth rate. Reduction of titanium with respect to stoichiometric titanium dioxide and oxidation of the wet-cleaned silicon substrate are observed from decomposition of the Ti 2p and Si 2p peaks. The formation of a TiSi xO y mixed oxide is also pointed out and confirmed by the presence of a characteristic component in the O 1 s peak.

  20. Irreversible properties of YBCO thick films deposited by liquid phase epitaxy on single crystalline substrates

    NASA Astrophysics Data System (ADS)

    Vostner, A.; Tönies, S.; Weber, H. W.; Cheng, Y. S.; Kurumovic, A.; Evetts, J. E.; Mennema, S. H.; Zandbergen, H. W.

    2003-10-01

    We report on the field and temperature dependence of the critical transport current density Jc, the angular dependence of the transport current at various external magnetic fields and the irreversibility fields in YBa2Cu3O7-delta (Y-123) thick films prepared by liquid phase epitaxy (LPE). A comparison of the irreversible properties between specimens produced with and without silver additions to the melt is also presented. Transmission electron microscopy (TEM) was employed to obtain information on the correlation between the transport properties and the microstructure. The samples were deposited either directly on NdGaO3 (NGO) or on seeded (100) MgO substrates, where a 200 nm thin YBCO film deposited by pulsed laser deposition (PLD) acts as seed layer for the LPE process. The final thickness of the Y-123 layer is of the order of 1 µm for the NGO and between 2 and 10 µm for the MgO samples. The critical current densities reach 3 × 109 A m-2 at zero field and 77 K in the best case.

  1. Aspects of passive magnetic levitation based on high-T(sub c) superconducting YBCO thin films

    NASA Technical Reports Server (NTRS)

    Schoenhuber, P.; Moon, F. C.

    1995-01-01

    Passive magnetic levitation systems reported in the past were mostly confined to bulk superconducting materials. Here we present fundamental studies on magnetic levitation employing cylindrical permanent magnets floating above high-T(sub c) superconducting YBCO thin films (thickness about 0.3 mu m). Experiments included free floating rotating magnets as well as well-established flexible beam methods. By means of the latter, we investigated levitation and drag force hysteresis as well as magnetic stiffness properties of the superconductor-magnet arrangement. In the case of vertical motion of the magnet, characteristic high symmetry of repulsive (approaching) and attractive (withdrawing) branches of the pronounced force-displacement hysteresis could be detected. Achievable force levels were low as expected but sufficient for levitation of permanent magnets. With regard to magnetic stiffness, thin films proved to show stiffness-force ratios about one order of magnitude higher than bulk materials. Phenomenological models support the measurements. Regarding the magnetic hysteresis of the superconductor, the Irie-Yamafuji model was used for solving the equation of force balance in cylindrical coordinates allowing for a macroscopic description of the superconductor magnetization. This procedure provided good agreement with experimental levitation force and stiffness data during vertical motion. For the case of (lateral) drag force basic qualitative characteristics could be recovered, too. It is shown that models, based on simple asymmetric magnetization of the superconductor, describe well asymptotic transition of drag forces after the change of the magnet motion direction. Virgin curves (starting from equilibrium, i.e. symmetric magnetization) are approximated by a linear approach already reported in literature only. This paper shows that basic properties of superconducting thin films allow for their application to magnetic levitation or - without need of levitation

  2. Aspects of passive magnetic levitation based on high-T{sub c} superconducting YBCO thin films

    SciTech Connect

    Schoenhuber, P.; Moon, F.C.

    1995-04-01

    Passive magnetic levitation systems reported in the past were mostly confined to bulk superconducting materials. Here the authors present fundamental studies on magnetic levitation employing cylindrical permanent magnets floating above high-T{sub c} superconducting YBCO thin films (thickness about 0.3 mu m). Experiments included free floating rotating magnets as well as well-established flexible beam methods. By means of the latter, the authors investigated levitation and drag force hysteresis as well as magnetic stiffness properties of the superconductor-magnet arrangement. In the case of vertical motion of the magnet, characteristic high symmetry of repulsive (approaching) and attractive (withdrawing) branches of the pronounced force-displacement hysteresis could be detected. Achievable force levels were low as expected but sufficient for levitation of permanent magnets. With regard to magnetic stiffness, thin films proved to show stiffness-force ratios about one order of magnitude higher than bulk materials. Phenomenological models support the measurements. Regarding the magnetic hysteresis of the superconductor, the Irie-Yamafuji model was used for solving the equation of force balance in cylindrical coordinates allowing for a macroscopic description of the superconductor magnetization. This procedure provided good agreement with experimental levitation force and stiffness data during vertical motion. For the case of (lateral) drag force basic qualitative characteristics could be recovered, too. It is shown that models, based on simple asymmetric magnetization of the superconductor, describe well asymptotic transition of drag forces after the change of the magnet motion direction. Virgin curves (starting from equilibrium, i.e. symmetric magnetization) are approximated by a linear approach already reported in literature only. This paper shows that basic properties of superconducting thin films allow for their application to magnetic levitation.

  3. Manufacture of YBCO Superconducting Flexible Tapes from Nanoparticle Films Derived from Sedimentation and by Flame Deposition of Nanoparticles from Solution

    SciTech Connect

    Wiesmann, Harold

    2008-02-24

    The objective of this CRADA was to develop the experimental and theoretical basis of a technology to produce yttrium barium copper oxide (YBCO) superconducting flexible tapes derived from nanoparticle metal oxide sols. The CRADA was a joint effort between Oxford Superconducting Technology, Brookhaven National Laboratory and Karpov Institute of Physical Chemistry. The effort was divided into three main tasks, the synthesis of a heteroepitaxial oxide buffer layer, and the manufacture of a flexible biaxially textured metallic substrate and the synthesis of a heteroepitaxial crystalline YBCO layer. The formation of a heteroepitaxial buffer layer was implemented using technology developed at the Karpov Institute of Physical Chemistry for the synthesis, stabilization and deposition of polymer stabilized nanoparticle metal oxide sols. Using this technology, flexible oriented RABiTS nickel tapes, manufactured and supplied by the CRADA partner, Oxford Superconducting Technology, Carteret, New Jersey, were coated with a film of metal oxide nanoparticles. After coating the RABiTS nickel tapes with the nanoparticle sols the nickel tape/nanoparticle composite structure was sintered in order to form a dense crystalline heteroepitaxial oxide layer on the surface of the tape, also known as a ‘buffer’ layer. The final phase of the research was the formation of a heteroepitaxial YBCO layer, grown on top of the metal oxide buffer layer. This work was scheduled to follow the development of the heteroepitaxial oxide buffer layer as described above. Three different polymer stabilized sols, yttrium hydroxide, Y(OH){sub 3}, copper hydroxide, Cu(OH){sub 2}, and barium fluoride, BaF{sub 2}, were synthesized and combined in the appropriate stoichiometric ratio. This metal oxide sol was then be deposited onto the buffer layer and reacted to form a crystalline heteroepitaxial YBCO film ranging from 1–5 microns thick.

  4. Flux Pinning Effects of Y2O3 Nanoparticulate Dispersions in Multilayered YBCO Thin Films

    DTIC Science & Technology

    2012-02-01

    substrates with a Y2O3 nanoparticulate pseudo-layer thickness ranging from 0.2 to 1.4 nm , and YBCO layer thickness varying from 7 to 50 nm . Scanning...with a Y2O3 nanoparticulate pseudo-layer thickness ranging from 0.2 to 1.4 nm , and YBCO layer thickness varying from 7 to 50 nm . Scanning electron...2.0 nm [3,4] compared to about 0.7 nm for Y2O3.4. Conclusion The use of Y2O3 nanoparticulates showed potential as flux pinning centers in YBCO thin

  5. Thickness-Dependent Properties of YBCO Films Grown on GZO/CLO-Buffered NiW Substrates

    NASA Astrophysics Data System (ADS)

    Malmivirta, M.; Huhtinen, H.; Zhao, Y.; Grivel, J.-C.; Paturi, P.

    2017-01-01

    To study the role of novel Gd_2Zr_2O_7/Ce_{0.9}La_{0.1}O_2 buffer layer structure on a biaxially textured NiW substrate, a set of YBa_2Cu_3O_{7-δ } (YBCO) films with different thicknesses were prepared by pulsed laser deposition (PLD). Interface imperfections as well as thickness-dependent structural properties were observed in the YBCO thin films. The structure is also reflected into the improved superconducting properties with the highest critical current densities in films with intermediate thicknesses. Therefore, it can be concluded that the existing buffer layers need more optimization before they can be successfully used for films with various thicknesses. This issue is linked to the extremely susceptible growth method of PLD when compared to the commonly used chemical deposition methods. Nevertheless, PLD-grown films can give a hint on what to concentrate to be able to further improve the buffer layer structures for future coated conductor technologies.

  6. Dependence of the structural, electrical and magnetic properties of the superconductive YBCO thin films on the deposition rate

    NASA Astrophysics Data System (ADS)

    Karci, A. B.; Tepe, M.; Sozeri, H.

    2009-03-01

    In this study, YBCO thin films on single crystal LaAlO3 (100) substrates have been grown using DC inverted cylindrical magnetron sputtering technique and the effect of the deposition rate on these films is investigated. Three different deposition rates are used to produce superconducting YBCO thin films with 150 nm of thickness on (100) LaAlO3 single crystal substrate at 780 0C. The samples are analyzed in detail by means of XRD, R-T, χ-T, M-H and AFM characterizations and also the critical current densities (Jc) are derived from the magnetic hysteresis curves using the modified Bean formula [1]. The critical current density at 50 K was found to be in the range of 3.107 A/m2 to 8. 107 A/m2 with a deposition rate between 2nm/min and 1.2nm/min. A correlation has been obtained so that as the film deposition rate increases, the surface smoothness and crystalline quality of the films significantly deteriorate, resulting in a significant decrease in Jc.

  7. High performance YBCO films. Report for 25 February-25 May 1994

    SciTech Connect

    Denlinger, E.J.

    1994-05-25

    A Bi2O3-based glass composition was found suitable for use under typical YBCO deposition conditions, which is in a vacuum under partial oxygen pressure at about 750 deg C. It was experimently determined that a Ag capping layer thickness of about 5 microns is needed for use with this glass. This Ag thickness will prevent any degradation in the silver layer's conducting properties due to Ag/glass interaction during the glass firing operation at 640 deg C. Lanthanum aluminate samples with YBCO topped with a thin layer of strontium titanate (STO) were prepared by Neocera and had excellent YBCO surface resistance properties as measured with a dielectric resonator test system. These samples will be used to test the compatibility of the YBCO with the silver capping layer deposited over the STO.

  8. Flux Pinning Enhancement in YBa2Cu3O7-x Films for Coated Conductor Applications (Postprint)

    DTIC Science & Technology

    2012-02-01

    application of a magnetic fi eld. Since the coher- ence length of YBCO is approximately 2 nm at 77 K, the defects necessary to serve as effective pinning...et al . [19] reported that 17 vol.% of 10 nm sized (Y,Sm) 2 O 3 nanoparticles were found in the fi lms processed by Sm - doped YBCO by MOCVD and...inside the chamber after the deposition was com- pleted. Films of different thicknesses were deposited on ( 100 ) LaAlO 3 or buffered (b) Y211 YBCO (a

  9. Preparation of ZnO:CeO{sub 2-x} thin films by AP-MOCVD: Structural and optical properties

    SciTech Connect

    Torres-Huerta, A.M.; Dominguez-Crespo, M.A.; Brachetti-Sibaja, S.B.; Dorantes-Rosales, H.; Hernandez-Perez, M.A.; Lois-Correa, J.A.

    2010-09-15

    The growth of columnar CeO{sub 2}, ZnO and ZnO:CeO{sub 2-x} films on quartz and AA6066 aluminum alloy substrates by economic atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) is reported. A novel and efficient combination of metal acetylacetonate precursors as well as mild operating conditions were used in the deposition process. The correlation among crystallinity, surface morphology and optical properties of the as-prepared films was analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM) and UV-vis spectroscopy. The synthesized films showed different crystallographic orientations depending on the ZnO and CeO{sub 2} lattice mismatch, cerium content and growth rate. The CeO{sub 2} films synthesized in this work showed plate-like compact structures as a result of the growth process typical of CVD. Both pure and ZnO:CeO{sub 2-x} films were obtained with a hexagonal structure and highly preferred orientation with the c-axis perpendicular to both substrates under the optimal deposition conditions. The microstructure was modified from dense, short round columns to round structures with cavities ('rose-flower-like' structures) and the typical ZnO morphology by controlling the cerium doping the film and substrate nature. High optical transmittance (>87%) was observed in the pure ZnO films. As for the ZnO:CeO{sub 2-x} films, the optical transmission was decreased and the UV absorption increased, which subsequently was affected by an increase in cerium content. This paper assesses the feasibility of using ZnO:CeO{sub 2-x} thin films as UV-absorbers in industrial applications. - Graphical abstract: TEM micrographs and their corresponding SAED pattern obtained for the as-deposited ZnO-CeO{sub 2-x} thin films for a Zn/Ce metallic ratio 16:9.

  10. Effect of surface modification of CeO2 buffer layers on Jc and defect microstructures of large-area YBCO thin films

    NASA Astrophysics Data System (ADS)

    Develos-Bagarinao, K.; Yamasaki, H.; Nakagawa, Y.

    2006-08-01

    High-quality CeO2 buffer layers are requisite for the successful growth of YBCO thin films with excellent properties on sapphire substrates. In this study, we evaluated the effect of surface modification of the CeO2 layers on the properties of the YBCO thin films prepared by large-area pulsed laser deposition (PLD), in particular the critical current density Jc and defect microstructure. High-temperature annealing (1050 °C) has been found to significantly smoothen the very rough and granular surfaces of the as-grown CeO2 layers (surface roughness rms~5-10 nm) to atomic flatness (rms~0.5 nm). However, a rather unique characteristic of the CeO2 layers deposited by large-area PLD is the development of pores when subjected to prolonged high-temperature annealing. For very short annealing periods (10-20 min), the surface morphology becomes atomically flat, along with the appearance of a high density of 'nanopores' that are ~40-100 nm in diameter and ~3-5 nm in depth. Extending the annealing period to 60 min or more results in the development of a surface subtended with enlarged pores ~0.2-0.5 µm in diameter. Compared with the YBCO thin films deposited on as-grown CeO2, YBCO thin films on annealed CeO2 exhibited better homogeneity of Jc and better crystalline texture. Among the YBCO thin films deposited on annealed CeO2, higher self-field and in-field Jc was obtained for YBCO thin films deposited on CeO2 with smooth surfaces but interspersed with nanopores. Investigation of the defect microstructure via the etch pit method in conjunction with atomic force microscopy (AFM) of the YBCO thin films revealed a high density of linear defects in the form of screw and edge dislocations, which correlated well with a high density of nanopores on annealed CeO2. Transmission electron microscopy (TEM) further confirmed the presence of threading dislocations clearly emanating from the nanopore sites. Angular dependence of Jc revealed enhanced flux pinning for YBCO thin films

  11. Sc2O3, Er2O3, and Y2O3 thin films by MOCVD from volatile guanidinate class of rare-earth precursors.

    PubMed

    Milanov, Andrian P; Xu, Ke; Cwik, Stefan; Parala, Harish; de los Arcos, Teresa; Becker, Hans-Werner; Rogalla, Detlef; Cross, Richard; Paul, Shashi; Devi, Anjana

    2012-12-07

    Alternative novel precursor chemistries for the vapor phase deposition of rare-earth (RE) oxide thin films were developed by synthesising the homoleptic guanidinate compounds tris(N,N'-diisopropyl-2-dimethylamidoguanidinato)-scandium(III) [Sc(DPDMG)(3)] (1), tris(N,N'-diisopropyl-2-dimethylamidoguanidinato)-erbium(III), [Er(DPDMG)(3)] (2) and tris(N,N'-diisopropyl-2-dimethylamidoguanidinato)-yttrium(III), [Y(DPDMG)(3)] (3). All three compounds are monomeric as revealed by single crystal X-ray diffraction (XRD) analysis, nuclear magnetic resonance (NMR) and electron impact mass spectrometry (EI-MS). The thermal analysis revealed that the compounds are volatile and very stable under evaporation conditions. Therefore the complexes were evaluated as precursors for the growth of Sc(2)O(3), Er(2)O(3) and Y(2)O(3) thin films, respectively, by metal-organic chemical vapor deposition (MOCVD). Uniform Sc(2)O(3), Er(2)O(3) and Y(2)O(3) films on Si(100) substrates with reproducible quality were grown by MOCVD by the combination of the respective guanidinate precursors and oxygen in the temperature range 350-700 °C. The structural, morphological, compositional and electrical properties of the films were investigated in detail. The most relevant film properties are highlighted in relation to the distinct advantages of the novel precursor chemistries in comparison to the commonly used literature known RE precursors. This study shows that compounds 1-3 are very good precursors for MOCVD yielding Sc(2)O(3), Er(2)O(3) and Y(2)O(3) thin films which are stoichiometric and display suitable electrical properties for their potential use as high dielectric constant (high-k) materials.

  12. Quantitative magneto-optical analysis of the role of finite temperatures on the critical state in YBCO thin films

    NASA Astrophysics Data System (ADS)

    Albrecht, Joachim; Brück, Sebastian; Stahl, Claudia; Ruoß, Stephen

    2016-11-01

    We use quantitative magneto-optical microscopy to investigate the influence of finite temperatures on the critical state of thin YBCO films. In particular, temperature and time dependence of supercurrents in inhomogeneous and anisotropic films are analyzed to extract the role of temperature on the supercurrents themselves and the influence of thermally activated relaxation. We find that inhomogeneities and anisotropies of the current density distribution correspond to a different temperature dependence of local supercurrents. In addition, the thermally activated decay of supercurrents can be used to extract local vortex pinning energies. With these results the modification of vortex pinning introduced by substrate structures is studied. In summary the local investigation of supercurrent densities allows the full description of the vortex pinning landscape with respect to pinning forces and energies in superconducting films with complex properties under the influence of finite temperatures.

  13. Thin Film Transistors Using Wafer-Scale Low-Temperature MOCVD WSe2

    NASA Astrophysics Data System (ADS)

    Gong, Yiyang; Zhang, Xiaotian; Redwing, Joan M.; Jackson, Thomas N.

    2016-12-01

    We report on thin film transistors using continuous WSe2 thin films synthesized by metal organic chemical vapor deposition at 400°C. O2 plasma etching is used to provide precise thickness modification of the WSe2 thin film with an etch rate ˜0.25 nm/min. Device performance is found to vary with the thickness of the WSe2 films. P-channel thin film transistors with plasma-thinned 3 nm WSe2 channels have mobility ˜0.01 cm2/Vs and current on-off ratio greater than 104. Our results suggest that plasma etching may provide an approach for post-growth modification of the electrical properties of two-dimensional transition metal dichalcogenide thin films.

  14. Growth of YBCO Thin Films on TiN(001) and CeO2-Coated TiN Surfaces

    DTIC Science & Technology

    2012-02-01

    substrates. Thin CeO2 (~200 nm thick) and YBCO (~300 nm thick) layers were grown on TiN-coated MgO substrates, using pulsed laser deposition. While YBCO ...and YBCO (300 nm thick) layers were grown on TiN-coated MgO substrates, using pulsed laser deposition. While YBCO grown directly on TiN was of poor...grown on the TiN-coated MgO and then an 300 nm thick YBCO layers was subsequently depos- ited. For other samples, YBCO deposition directly on the

  15. Chemically deposited La2Zr2O7 buffer layers for YBCO-coated conductors: film growth and microstructure

    NASA Astrophysics Data System (ADS)

    Molina, L.; Knoth, K.; Engel, S.; Holzapfel, B.; Eibl, O.

    2006-11-01

    An adequate buffer layer architecture is of great importance for YBa2Cu3O7-δ (YBCO)-coated conductor fabrication. We present a transmission electron microscopy (TEM) analysis of La2Zr2O7 (LZO) buffer layers on biaxially textured Ni-5 at.%W substrates for YBCO-coated conductors prepared by chemical solution deposition (CSD). The LZO thin films were heat-treated at 900 and 1050 °C respectively. Electron diffraction patterns, and bright and dark-field images were used to determine the microstructure, texture and the nanoporosity of the films. By x-ray diffraction the films were found to be [100] oriented and strongly biaxially textured. Although x-ray diffraction suggests an epitaxial growth of LZO on Ni it was shown by TEM that this was not the case. The grain size of the films is between 100 and 300 nm and therefore much smaller than the Ni grain size of 40 µm. Appropriate acquisition conditions for scanning electron microscopy (SEM) and TEM imaging are given to identify the nanogranularity of the films. For the film annealed at 1050 °C high-resolution SEM images clearly show a polycrystalline LZO microstructure and the grain size can readily be determined. Electron diffraction rings are more pronounced than for the film annealed at 900 °C, indicating a higher level of polycrystallinity in the film. SEM images of the film annealed at 900 °C yield no evidence of a polycrystalline microstructure; only single misoriented LZO grains separated by 500 nm are observed. Nanovoids 10-40 nm in size were found in the LZO buffer layers with a high density. The voids had approximately cuboid shape, indicating an anisotropy of the surface energy in LZO. The surface planes of the voids were identified as {111} lattice planes. Despite the nanoporosity, which is a typical feature of CSD-grown buffer layers, the LZO buffer layers act as efficient Ni diffusion barriers. Energy dispersive x-ray microanalysis (EDX) in the transmission electron microscope yielded the composition of

  16. Reduced pressure MOCVD of C-axis oriented BiSrCaCuO thin films

    NASA Technical Reports Server (NTRS)

    Hamaguchi, Norihito; Vigil, J.; Gardiner, R.; Kirlin, P. S.

    1990-01-01

    BiSrCaCuO thin films were deposited on MgO (100) single-crystal substrates by metalorganic chemical vapor deposition at 500 C and 2 torr using fluorinated beta-diketonate complexes of Sr, Ca, and Cu and triphenylbismuth. An inverted vertical reaction chamber allowed uniform film growth over large areas (7.7 cm diameter). The as-deposited films were amorphous mixtures of oxides and fluorides; a two-step annealing protocol (750 C + 850-870 C) was developed which gives c-axis oriented films of Bi2Sr2Ca1Cu2O(x). The postannealed films showed onsets in the resistive transition of 110 K, and zero resistivity was achieved by 83 K. Critical current densities as high as 11,000 A/sq cm were obtained at 25 K.

  17. RF plasma MOCVD of Y2O3 thin films: Effect of RF self-bias on the substrates during deposition

    NASA Astrophysics Data System (ADS)

    Chopade, S. S.; Barve, S. A.; Thulasi Raman, K. H.; Chand, N.; Deo, M. N.; Biswas, A.; Rai, Sanjay; Lodha, G. S.; Rao, G. M.; Patil, D. S.

    2013-11-01

    Yttrium oxide (Y2O3) thin films have been deposited by radio frequency plasma assisted metal organic chemical vapor deposition (MOCVD) process using (2,2,6,6-tetramethyl-3,5-heptanedionate) yttrium (commonly known as Y(thd)3) precursor in a plasma of argon and oxygen gases at a substrate temperature of 350 °C. The films have been deposited under influence of varying RF self-bias (-50 V to -175 V) on silicon, quartz, stainless steel and tantalum substrates. The deposited coatings are characterized by glancing angle X-ray diffraction (GIXRD), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry and scanning electron microscopy (SEM). GIXRD and FTIR results indicate deposition of Y2O3 (BCC structure) in all cases. However, XPS results indicate nonstoichiometric cubic phase deposition on the surface of deposited films. The degree of nonstoichiometry varies with bias during deposition. Ellipsometry results indicate that the refractive index for the deposited films is varying from 1.70 to 1.83 that is typical for Y2O3. All films are transparent in the investigated wavelength range 300-1200 nm. SEM results indicate that the microstructure of the films is changing with applied bias. Results indicate that it is possible to deposit single phase cubic Y2O3 thin films at low substrate temperature by RF plasma MOCVD process. RF self-bias that decides about the energy of impinging ions on the substrates plays an important role in controlling the texture of deposited Y2O3 films on the substrates. Results indicate that to control the structure of films and its texture, it is important to control the bias on the substrate during deposition. The films deposited at high bias level show degradation in the crystallinity and reduction of thickness.

  18. Conductive Cu-TiO2 thin films obtained via MOCVD

    NASA Astrophysics Data System (ADS)

    Alvarez Y Quintavalle, F.; Battiston, G. A.; Casellato, U.; Fregona, D.; Gerbasi, R.; Loro, F.

    2002-06-01

    Growths of nanophased Cu, CuO, Cu-TiO2 and Cu2O-TiO2 thin films were performed by using titanium tetraisopropoxide Ti(OiPr)4, and copper(II)acetylacetonatehydrate Cu(acac)2.H2O in the temperature range 275- 370 °C. The composite Cu-TiO2 with very low percent of titanium dioxide (TiO2<5%) can be an alternative procedure to obtain well adherent, smooth and well connected Cu films. Cu2O-TiO2 were obtained by annealing of Cu-TiO2 thin films. Cu2O in a TiO2 matrix remains unaltered after repeated thermal treatments when the Cu:Ti metal ratio is equal or less than 15:1. The films exhibited semiconductor characteristics with a moderate transparency, 40-60% in the visible region.

  19. Monomeric malonate precursors for the MOCVD of HfO2 and ZrO2 thin films.

    PubMed

    Pothiraja, Ramasamy; Milanov, Andrian; Parala, Harish; Winter, Manuela; Fischer, Roland A; Devi, Anjana

    2009-01-28

    New Hf and Zr malonate complexes have been synthesized by the reaction of metal amides with different malonate ligands (L = dimethyl malonate (Hdmml), diethyl malonate (Hdeml), di-tert-butyl malonate (Hdbml) and bis(trimethylsilyl) malonate (Hbsml)). Homoleptic eight-coordinated monomeric compounds of the type ML4 were obtained for Hf with all the malonate ligands employed. In contrast, for Zr only Hdmml and Hdeml yielded the eight-coordinated monomeric compounds of the type ML4, while using the bulky Hdbml and Hbsml ligands resulted into mixed alkoxo-malonato six-coordinated compounds of the type [ML2(OR)2]. Single crystal X-ray diffraction studies of all the compounds are presented and discussed, and they are found to be monomeric. The complexes are solids and in solution, they retain their monomeric nature as evidenced by NMR measurements. Compared to the classical beta-diketonate complexes, [M(acac)4] and [M(thd)4] (M = Hf, Zr; acac: acetylacetonate; thd: tetramethylheptadione), the new malonate compounds are more volatile, decompose at lower temperatures and have lower melting points. In particular, the homoleptic diethyl malonate complexes of Hf and Zr melt at temperatures as low as 62 degrees C. In addition, the compounds are very stable in air and can be sublimed quantitatively. The promising thermal properties makes these compounds interesting for metal-organic chemical vapor deposition (MOCVD). This was demonstrated by depositing HfO2 and ZrO2 thin films successfully with two representative Hf and Zr complexes.

  20. Microstructures and improved J c-H characteristics of Cl-containing YBCO thin films prepared by the fluorine-free MOD method

    NASA Astrophysics Data System (ADS)

    Motoki, Takanori; Shimoyama, Jun-ichi; Ogino, Hiraku; Kishio, Kohji; Roh, Jiyoung; Tohei, Tetsuya; Ikuhara, Yuichi; Horii, Shigeru; Doi, Toshiya; Honda, Genki; Nagaishi, Tatsuoki

    2016-01-01

    Undoped, Cl-doped, (Cl, Hf) co-doped and (Cl, Sn) co-doped YBa2Cu3O y (YBCO) thin films have been prepared by the fluorine-free metal-organic decomposition (FF-MOD) method on SrTiO3(100) single-crystalline substrates. Cross-sectional microstructures of these films were investigated in detail using scanning transmission electron microscopy (STEM). Rectangular-shaped oxychloride precipitates (Ba2Cu3O4Cl2) and fine particles (BaSnO3) were clearly observed in the (Cl, Sn) co-doped films. The magnetic angular dependence of the critical current density (J c-H-θ) of these films was evaluated. The existence of c-axis-correlated type pinning centers was suggested in Cl-containing YBCO films, whereas this type of pinning is not common in MOD-processed films. J c values were enhanced by Cl doping and further by (Cl, Sn) co-doping in all magnetic field directions at 77 K. This improved J c-H-θ property with c-axis-correlated pinning sites is the first report in FF-MOD-processed YBCO films.

  1. Enhancement of Co nucleation on the TaN(x) film surface in Co MOCVD.

    PubMed

    Park, Jae-Hyung; Moon, Dae-Yong; Han, Dong-Suk; Shin, So-Ra; Park, Jong-Wan

    2013-10-01

    In this work, the Co film was deposited by chemical vapor deposition (CVD) on TaN(x)/SiO2/Si substrate at various NH3/H2 gas flow ratio (0, 0.08, 0.11, 0.17, 0.2) to form the continuous layer. It was found that Co film can achieve a low resistivity of 63 microomega-cm, high nucleation density, and a low root-mean-square roughness of 0.79 nm at 0.17 of NH3/H2 gas flow ratio. Moreover, by using fourier transform infrared spectroscopy (FT-IR) analysis, the effect of NH3 gas was confirmed as a reaction catalyst.

  2. Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

    NASA Technical Reports Server (NTRS)

    Macinnes, Andrew N.; Jenkins, Phillip P.; Power, Michael B.; Kang, Soon; Barron, Andrew R.; Hepp, Aloysius F.; Tabib-Azar, Massood

    1994-01-01

    Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.

  3. Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications

    NASA Astrophysics Data System (ADS)

    Aoukar, M.; Szkutnik, P. D.; Jourde, D.; Pelissier, B.; Michallon, P.; Noé, P.; Vallée, C.

    2015-07-01

    Amorphous and smooth GeTe thin films are deposited on 200 mm silicon substrates by plasma enhanced—metal organic chemical vapor deposition (PE-MOCVD) using the commercial organometallic precursors TDMAGe and DIPTe as Ge and Te precursors, respectively. X-ray photoelectron spectroscopy (XPS) measurements show a stoichiometric composition of the deposited GeTe films but with high carbon contamination. Using information collected by Optical Emission Spectroscopy (OES) and XPS, the origin of carbon contamination is determined and the dissociation mechanisms of Ge and Te precursors in H2 + Ar plasma are proposed. As a result, carbon level is properly controlled by varying operating parameters such as plasma radio frequency power, pressure and H2 rate. Finally, GeTe films with carbon level as low as 5 at. % are obtained.

  4. Structure Dependence of Magnetic Properties for Annealed GaMnN Films Grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Jiang, Xian-Zhe; Yang, Xue-Lin; Ji, Cheng; Xing, Hai-Ying; Yang, Zhi-Jian; Wang, Cun-Da; Yu, Tong-Jun; Zhang, Guo-Yi

    2014-06-01

    GaMnN/GaN multilayers and conventional GaMnN single layers are grown by metal-organic chemical vapor deposition. Both kinds of samples show room-temperature ferromagnetism. After thermal annealing, the sample with GaMnN/GaN multilayer structure displays a larger coercivity and better thermal stability compared to the GaMnN single layer. The annealing effects on VGa related defects are observed from photoluminescence measurements. Moreover, a different magnetic behavior is also found in the annealed GaMnN films grown on different (n-type GaN and p-type GaN) templates. These kinds of structure-dependent magnetic behaviors indicate that defects or carriers transformation introduced during annealing may have important effects on the electronic structure of Mn ions and on the ferromagnetism. Our work may be helpful for further understanding the origin of ferromagnetism in GaN-based diluted magnetic semiconductors.

  5. Migrating from superconducting to semiconducting YBCO thin film bolometers as future far-infrared imaging pixels

    NASA Astrophysics Data System (ADS)

    Jagtap, Vishal S.; Longhin, Mattia; Kulsreshath, Mukesh K.; Kreisler, Alain J.; Dégardin, Annick F.

    2010-04-01

    YBa2Cu3O6+x compounds are well known to exhibit superconducting properties for x > 0.5 and semiconducting properties for lower oxygen content. Superconducting YBCO was obtained commercially; the semiconducting material was deposited by sputtering at room temperature. In order to migrate from superconducting to uncooled semiconducting far-infrared bolometer technologies, we have first realized and compared the performance of 2 × 2 pixel arrays made from both materials deposited on MgO substrates. Pixels were in the shape of meanders, embedded in an area of about 1 mm2. Pixel detectivity and thermal crosstalk were studied in the 1 Hz to 100 kHz modulation frequency range by using a 850 nm solid state laser. Secondly we have improved the geometry of semiconducting YBCO bolometers fabricated on silicon substrates, in order to match their impedance with the impedance of the antenna required for working in the THz range. First optical results are also presented, where both regular bolometric and pyroelectric responses are exhibited.

  6. Progress in fabrication of large magnetic sheilds by using extended YBCO thick films sprayed on stainless steel with the HVOF technique

    SciTech Connect

    Pavese, F.; Bergadano, E.; Ferri, D.

    1997-06-01

    Fabricating a full box-type magnetic shield, by spraying a thick film of commercial YBCO powder on stainless steel with the oxygen-fuel high-velocity technique (HVOF, also referred to as {open_quotes}continuous detonation spray{close_quotes} (CDS)), requires the solution of several specific problems since the design stage of the project. The design problems of this type of shield are examined and the results obtained in the early stages of the realization are discussed.

  7. Observation of step structures in the I-V characteristics of YBCO thin films

    NASA Astrophysics Data System (ADS)

    Azoulay, J.; Verdyan, A.; Lapsker, I.

    1997-08-01

    Many electrical properties of the high Tc superconductors are widely probed utilizing current-voltage characteristics because of its sensitivity to the phase transition. In this work we report on detailed study of YBCO I-V characteristics shape above the critical current in the phase transition vicinity. For a given temperature controlled to a better than 10mK stability over the whole I-V cycle, the applied current has been gradually increased to exceed the critical current. The system has thus been driven to cross over to the mixed state. Using dI/dV versus V plots, it is shown that all the curves are characterized by a fine step structures at current densities higher than the critical ones.

  8. Structural and optical properties of Ga{sub 2}O{sub 3}:In films deposited on MgO (1 0 0) substrates by MOCVD

    SciTech Connect

    Kong Lingyi; Ma Jin; Luan Caina; Zhu Zhen

    2011-08-15

    Ga{sub 2}O{sub 3}:In films with different indium (In) content x [x=In/(Ga+In) atomic ratio] have been deposited on MgO (1 0 0) substrates by metalorganic chemical vapor deposition (MOCVD). Structural analyses revealed that the film deposited with actual In content (x') of 0.09 was an epitaxial film and the films with x'=0.18 and 0.37 had mixed-phase structures of monoclinic Ga{sub 2}O{sub 3} and bixbyite In{sub 2}O{sub 3}. The absolute average transmittance of the obtained films in the visible region exceeded 95%, and the band gap was in the range of 4.74-4.87 eV. Photoluminescence (PL) measurements were performed at room temperature, in which the visible luminescences were strong and could be seen by the naked eye. The strong emissions in the visible light region were proposed to originate from the gallium vacancies, oxygen deficiencies and other defects in these films. - Graphical abstract: Low magnification XTEM (a), HRTEM (b) and SAED (c) micrographs of the interface area between Ga{sub 1.82}In{sub 0.18}O{sub 3} film and MgO substrate have showed the Ga{sub 1.82}In{sub 0.18}O{sub 3} is an epitaxial film. Highlights: > Ga{sub 1.82}In{sub 0.18}O{sub 3} epitaxial film was deposited on MgO(1 0 0) substrate. > The transmittance of the Ga{sub 2}O{sub 3}:In films in the visible region exceeded 95%. > Strong emissions were observed in the photoluminescence measurements of the films.

  9. Advanced high temperature superconductor film-based process using RABiTS

    SciTech Connect

    Goyal, A.; Hawsey, R.A.; Hack, J.; Moon, D.

    2000-01-01

    The purpose of this Cooperative Research and Development Agreement (CRADA) between Lockheed Martin Energy Research Corporation (Contractor), Managing contractor for Oak Ridge National Laboratory (ORNL) and Midwest Superconductivity, Inc. (MSI) and Westinghouse Science and Electric Company (WEC) was to develop the basis for a commercial process for the manufacturing of superconducting tape based on the RABiTS technology developed at ORNL. The chosen method for deposition of YBCO films on RABiTS was Metal Organic chemical Vapor Deposition (MOCVD).

  10. Sputter Synthesis of c-axis YBCO Films with Excellent Surface Smoothness and Fabrication of Sandwich type Junctions with Interface Engineered Barrier

    NASA Astrophysics Data System (ADS)

    Ohk, K.; Iwashita, N.; Kikunaga, K.; Okuda, T.; Obara, K.; Terada, N.

    2006-06-01

    Flat surface is essential to base electrodes of sandwich type Josephson junctions. In the present study, c-axis YBa2Cu3O7 (c-YBCO) films with excellent surface smoothness were fabricated by off-axis sputtering. For the flat surfaces, key parameters in the sputtering process were growth temperature, atmosphere conditions and surface nature of substrates. The correlation between the sputtering conditions and the characteristic of the c-YBCO films reveal the following phenomena; i) The films deposited at low temperature of 660 °C showed a low zero-resistance temperature because of a poor connection between the c-axis crystallites. Surfaces of these low temperature grown films involve large and rectangular shaped a-axis grains, thereby the peak-to-valley (PV) amplitude of the surface was beyond 80 nm. The experiments indicate that the growth of the grains should be caused by low surface diffusion of adatoms at the low growth temperature. ii) Contrarily, at high Ts above 770 °C, a serious deviation of film composition from the stoichiometry took places, which also promoted an outgrowth of a-axis grains. Consequently, the high temperature grown films had seriously rough surfaces (PV amplitude > 25 nm). iii) The growth at the optimised Ts of 765 °C led a remarkable reduction of surface roughness (root-mean-square (RMS) of the roughness < 1.8 nm) without any degradation of superconducting properties. The achieved surface morphology is classified as one of the smoothest surfaces of the YBCO film grow by sputtering. iv) A density of the a-axis outgrowth was related to the surface defects of the substrate. The usage of SrTiO3 (100) plane consists of atomically flat and wide terraces and unit-cell high steps resulted in almost outgrowth-face surface with an excellent smoothness (PV amplitude < 10 nm, RMS of the roughness < 1.0 nm).

  11. Low-temperature MOCVD growth of oriented PbZr{sub x}Ti{sub 1-x}O{sub 3} thin films on Si substrates.

    SciTech Connect

    Chen, N.

    1998-05-08

    Polycrystalline Pb(Zr{sub 0.6}Ti{sub 0.4})O{sub 3} (PZT) thin films, 3000-6000 {angstrom} thick, have been grown by metal-organic chemical vapor deposition (MOCVD) on (111)Pt/Ti/SiO{sub 2}/Si substrates at temperatures as low as 450-525 C. Random and (111)-oriented, or occasionally (100)-oriented, PZT films can be deposited directly on (111)Pt/Ti/SiO{sub 2}/Si. In addition, highly (100)-oriented films can be deposited consistently by using 150-250 {angstrom} thick (100)-oriented PbTiO{sub 3} (PT) or TiO{sub 2} as a template. Films were characterized by X-ray diffraction, electron microscopy, and electrical measurements. The as-grown (100)-oriented films on (111)Pt/TiSiO{sub 2}/Si substrates exhibited dielectric constants ({var_epsilon}{sub r}) of up to 600, remnant polarization (P{sub r}) of 40 {micro}C/cm{sup 2}, coercive field of 55 kV/cm, and breakdown field of 2-6 x 10{sub 7} V/m.

  12. YBCO COATED CONDUCTORS

    SciTech Connect

    Paranthaman, Mariappan Parans

    2010-01-01

    Since the discovery of high-temperature superconductors (HTS) in 1986, both (Bi,Pb)2Sr2Ca2Cu3O10 (BSCCO or 2223 with a critical temperature, Tc of 110 K) and YBa2Cu3O7- (YBCO or 123 with a Tc of 91 K) have emerged as the leading candidate materials for the first generation (1G) and second generation (2G) high temperature superconductor wires or tapes that will carry high critical current density in liquid nitrogen temperatures [1-7]. The crystal structures and detailed fundamental properties of BSCCO and YBCO superconductors have been reviewed by Matsumoto in a separate chapter in this book. The U.S. Department of Energy s target price for the conductor is close to the current copper wire cost of $10-50/kA-meter, i.e. a meter of copper type conductor carrying 1000 A current costs ~ $ 50 [8]. The long-term goal for the DOE, Office of Electricity, Advanced Conductors and Cables program is to achieve HTS wire in 1000 meters long with current carrying capacity of 1000 A/cm [8]. Robust, high-performance HTS wire will certainly revolutionize the electric power grid and various other electric power equipments as well. Sumitomo Electric Power (Japan) has been widely recognized as the world leader in manufacturing the first-generation HTS wires based on BSCCO materials using the Oxide-Powder-In-Tube (OPIT) over-pressure process [9]. Typically, 1G HTS wires carry critical currents, Ic, of over 200 Amperes (A) in piece lengths of one kilometer lengths at the standard 4 mm width and ~ 200 m thickness. However, due to the higher cost of 1G wire, mainly because of the cost of Ag alloy sheath, the researchers shifted their effort towards the development of YBCO (second generation 2G) tapes in the last fifteen years [1-7]. One of the main obstacles to the ability to carry high critical currents in YBCO films has been the phenomenon of weak links, i.e., grain boundaries formed by the misalignment of neighboring YBCO grains are known to form obstacles to current flow [10]. By

  13. ZnO-Based Transparent Thin-Film Transistors with MgO Gate Dielectric Grown by in-situ MOCVD

    NASA Astrophysics Data System (ADS)

    Zhao, Wang; Dong, Xin; Zhao, Long; Shi, Zhi-Feng; Wang, Jin; Wang, Hui; Xia, Xiao-Chuan; Chang, Yu-Chun; Zhang, Bao-Lin; Du, Guo-Tong

    2010-12-01

    ZnO transparent thin-film transistors with MgO gate dielectric were fabricated by in-situ metal organic chemical vapor deposition (MOCVD) technology. We used an uninterrupted growth method to simplify the fabrication steps and to avoid the unexpectable contaminating during epitaxy process. MgO layer is helpful to reduce the gate leakage current, as well as to achieve high transparency in visible light band, due to the wide band gap (7.7eV) and high dielectric constant (9.8). The XRD measurement indicates that the ZnO layer has high crystal quality. The field effect mobility and the on/off current ratio of the device is 2.69 cm2 V-1s-1 and ~ 1 × 104, respectively.

  14. The structure of BaCu 3O 4 particles occurring on thin HoBa 2Cu 3O 7 films prepared by MOCVD

    NASA Astrophysics Data System (ADS)

    Zandbergen, H. W.; Jansen, J.; Svetchnikov, V. L.; Graboy, I. E.; Samoylenkov, S.; Gorbenko, O.; Kaul, A. R.

    1999-12-01

    The structure of BaCu 3O 4 phase occurring as particles on the surface of (001) RBa 2Cu 3O 7 epitaxial films prepared by metalorganic chemical vapor deposition (MOCVD) has been investigated with quantitative electron diffraction and HREM. The orthorhombic unit cell is a=1.097(9) nm, b=0.554(3) nm, c=0.394(2) nm with space group Cmmm, the values being in agreement with X-ray diffraction (XRD) study. The structure consists of alternating Cu 3O 4 and Ba layers along the c-axis. The compound is stabilised due to the formation of low-energy coherent boundaries with RBa 2Cu 3O 7 and/or perovskite substrate.

  15. Microwave and transport studies of superconducting films of YBCO and fullerenes. Final technical report, 15 February 1993-31 August 1996

    SciTech Connect

    Dresselhaus, M.S.; Dresselhaus, G.

    1996-08-31

    During the 1995-96 year of the research program on `Microwave and Transport Studies of Superconducting Films of YBCO and Fullerenes,` the effort was focused on several projects. The main highlight was a collaborative study of the nonlinear microwave properties of superconducting YBa2Cu3O(7-x) (YBCO) which was carried out with researchers at Rome Labs and the MIT Lincoln Laboratory. During this year Nathan Belk completed his Ph.D. thesis entitled `Electronic Transport and Magnetic Properties of Disordered High-Tc Materials.` Joe Habib made significant progress with his study of microwave losses in individual Josephson junctions. A new graduate student, Chris Lehner, who is an Army Captain, joined the group on assignment from the US Army, and is working on the modeling of microwave losses in superconducting circuits. Continued progress was made with the use of femtosecond optics to study superconductivity and the associated phenomena in alkali metal doped C60 materials.

  16. High mobility, large linear magnetoresistance, and quantum transport phenomena in Bi2Te3 films grown by metallo-organic chemical vapor deposition (MOCVD).

    PubMed

    Jin, Hyunwoo; Kim, Kwang-Chon; Seo, Juhee; Kim, Seong Keun; Cheong, Byung-Ki; Kim, Jin-Sang; Lee, Suyoun

    2015-11-07

    We investigated the magnetotransport properties of Bi2Te3 films grown on GaAs (001) substrate by a cost-effective metallo-organic chemical vapor deposition (MOCVD). We observed the remarkably high carrier mobility and the giant linear magnetoresistance (carrier mobility ∼ 22 000 cm(2) V(-1) s(-1), magnetoresistance ∼ 750% at 1.8 K and 9 T for a 100 nm thick film) that depends on the film thickness. In addition, the Shubnikov-de Haas oscillation was observed, from which the effective mass was calculated to be consistent with the known value. From the thickness dependence of the Shubnikov-de Haas oscillation, it was found that a two dimensional electron gas with the conventional electron nature coexists with the topological Dirac fermion states and dominates the carrier transport in the Bi2Te3 film with thickness higher than 300 nm. These results are attributed to the intrinsic nature of Bi2Te3 in the high-mobility transport regime obtained by a deliberate choice of the substrate and the growth conditions.

  17. Electron microscopy study of MOCVD-grown TiO sub 2 thin films and TiO sub 2 /Al sub 2 O sub 3 interfaces

    SciTech Connect

    Gao, Y.; Merkle, K.L.; Chang, H.L.M.; Zhang, T.J.; Lam, D. J.

    1990-11-01

    TiO{sub 2} thin films grown on (11{bar 2}0) sapphire at 800{degree}C by the MOCVD technique have been characterized by transmission electron microscopy. The TiO{sub 2} thin films are single crystalline and have the rutile structure. The epitaxial orientation relationship between the TiO{sub 2} thin films (R) and the substrate (S) has been found to be: (101)(0{bar 1}0){sub R}{parallel}(11{bar 2}0)(0001){sub S}. Growth twins in the films are commonly observed with the twin plane {l brace}101{r brace} and twinning direction {l angle}011{r angle}. Detailed atomic structures of the twin boundaries and TiO{sub 2}/{alpha}-Al{sub 2}O{sub 3} interfaces have been investigated by high-resolution electron microscopy (HREM). When the interfaces are viewed in the direction of (0{bar 1}0){sub R}/(0001){sub S}, the interfaces are found to be structurally coherent in the direction of ({bar 1}01){sub R}/(1{bar 1}00){sub S}, in which the lattice mismatch at the interfaces is about 0.5%. 8 refs., 4 figs.

  18. Enhanced resonant soft X-ray scattering of YBa2Cu3O7-x (YBCO) 50 nm c-axis film on bi-crystalline substrates

    NASA Astrophysics Data System (ADS)

    Anavacerrada, Maria A.; Sahibudeen, Hizam; Acrivos, Juana V.; Kortright, Jeff B.

    2004-03-01

    The disorder induced by the grain boundary in Josepshon junctions fabricated with 50 nm YBCO films deposited on SrTiO3 bi-crystalline substrates [1] has been investigated by YBCO [001] enhanced resonant soft X-ray scattering. Spectra have been collected in the back scattering geometry near the O(K), Cu(L3,2) and Ba(M5,4) edges at three different positions across the grain boundary. The experiments were performed at the 6.3.1-Jeff B. Kortright station of the Advanced Light Source, LBNL. The strain fields of dislocations perturb the grain boundary local structure, mainly the YBCO oxygen sublattice leading to non-superconducting zones near the grain boundary. By comparison to published spectra near the Cu(L3,2) and Ba(M5,4) edges [2] the oxygen content 7-x is greater than 6.5 at any position in the film. The decrease in the relative intensity of the Cu(L3,2) main peaks in the spectra observed at positions close to the grain boundary suggest a high concentration of holes in the CuO2 layers in this region. Information on the oxygen composition across the grain boundary can be obtained by comparison of the O(K) edge spectra with data previously published on YBCO single crystal with different oxygen content [3]. [1] M. A. Navacerrada, M. L. Lucía and F. Sánchez Quesada, Europhys. Lett. 54, 387 (2001); [2] N. Nücker, E.Pellegrin, P. Schweiss, J. Fink, S. L. Molodtsov, C.T. Simmons, G. Kaindl, A. Erb and G. Müller Vogt, Phys. Rev. B 51, 8529 (1995); [3] J.- H. Guo, S. M. Butorin, N. Wassdahl and J. Nordgren, Phys. Rev. B 61, 9140 (2000) and references therein.

  19. Ion-beam-assisted deposition of biaxially aligned yttria-stabilized zirconia template films on metallic substrates for YBCO-coated conductors

    NASA Astrophysics Data System (ADS)

    Ma, B.; Li, M.; Fisher, B. L.; Balachandran, U.

    2002-07-01

    Biaxially textured yttria-stabilized zirconia (YSZ) films were grown on mechanically polished Hastelloy C276 (HC) substrates by ion-beam-assisted deposition and electron-beam evaporation. The surface root-mean-square (RMS) roughness of the polished HC substrates was ≈3 nm, as measured by atomic force microscopy (AFM). A water-cooled sample stage was used to hold the substrate temperature below 100 °C during deposition. RMS roughness of ≈3.3 nm was measured on the deposited YSZ films by AFM. X-ray pole figures were conducted for texture analysis; in-plane texture measured from YSZ (111) φ-scan FWHM was 13.2° and out-of-plane texture from the YSZ (002) ω-scan FWHM was 7.7°. An ≈10 nm thick CeO2 buffer layer was deposited on the YSZ film at 800 °C before YBCO films were ablated by pulsed laser deposition at 780 °C in a 250 mTorr flowing oxygen environment. Good in-plane texture with FWHM ≈ 7° was observed in YBCO films. Tc = 90 K, with sharp transition, and transport Jc of ≈2.2 × 106 A cm-2 were observed in a 0.5 μm thick, 5 mm wide, and 1 cm long sample at 77 K in self-field.

  20. Growth and barium zirconium oxide doping study on superconducting M-barium copper oxide (M = yttrium, samarium) films using a fluorine-free metal organic decomposition process

    NASA Astrophysics Data System (ADS)

    Lu, Feng

    We present a fluorine-free metal organic deposition (F-free MOD) process - which is possibly a rapid and economic alternative to commercial trifluoroacetates metal organic deposition (TFA-MOD) and metal organic chemical vapor deposition (MOCVD) processes - for the fabrication of high quality epitaxial high temperature superconducting YBa2Cu3O7-x (YBCO) films on both Rolling-Assisted Biaxially Textured Substrates (RABiTS) and single crystal substrates. We first studied the growth of YBCO and SmBCO films, and their resulting microstructure and superconducting properties. We produced epitaxial c-axis YBCO films with high critical current density (Jc) in excess of 106 A/cm2 at 77K in self field at the thickness of ˜1 mum. Because industrial applications demand high quality YBCO films with very high Jc, we investigated introducing BaZrO3 (BZO) nano-pinning sites in HTS thin films by our F-free MOD technique to improve Jc and the global pinning force (Fp). BZO-doped YBCO films were fabricated by adding extra Ba and Zr in the precursor solutions, according to the molar formula 1 YBCO + x BZO. We found the BZO content affects the growth of YBCO films and determined the optimum BZO content which leads to the most effective pinning enhancement and the least YBCO degradation. We achieved the maximum pinning force of ˜ 10 GN/m3 for x = 0.10 BZO-doped, 200 nm thick YBCO film on SrTiO3 single crystal substrates by modifying the pyrolysis from a one-step to a two-plateau decomposition during the F-free MOD process. For growing optimum BZO-doped YBCO films on RABiTS substrates, the F-free MOD process was also optimized by adjusting the maximum growth temperature and growth time to achieve stronger pinning forces. Through-process quenching studies indicate that BZO form 10--25 nm nanoparticles at the early stage of the process and are stable during the following YBCO growth, demonstrating that chemically doping YBCO films with BZO using the F-free MOD process is a very effective

  1. Vaporization of a mixed precursors in chemical vapor deposition for YBCO films

    NASA Technical Reports Server (NTRS)

    Zhou, Gang; Meng, Guangyao; Schneider, Roger L.; Sarma, Bimal K.; Levy, Moises

    1995-01-01

    Single phase YBa2Cu3O7-delta thin films with T(c) values around 90 K are readily obtained by using a single source chemical vapor deposition technique with a normal precursor mass transport. The quality of the films is controlled by adjusting the carrier gas flow rate and the precursor feed rate.

  2. Novel Neo-Pentoxide Precursors for MOCVD Thin Films of TiO(2) and ZrO(2).[1

    SciTech Connect

    Boyle, Timothy J.; Francisco, Laila P.; Gallegos, Jesus J.; Rodriguez, Mark A.; Ward, Timothy L.

    1999-07-14

    Two novel Group IV precursors, titanium (IV) neo-pentoxide, [Ti({mu}-ONep)(ONep){sub 3}]{sub 2} (l), and zirconium (IV) neo-pentoxide, [Zr({mu}-ONep)(ONep){sub 3}]{sub 2} (2), were reported to possess relatively high volatility at low temperatures. These compounds were therefore investigated as MOCVD precursors using a lamp-heated cold-wall CVD reactor and direct sublimation without carrier gas. The ONep derivatives proved to be competitive precursors for the production of thin films of the appropriate MO{sub 2} (M = Ti or Zr) materials in comparison to other metallo-organic precursors. Compound 1 was found to sublime at 120 C with a deposition rate of {approximately}0.350 {mu}m/min onto a substrate at 330 C forming the anatase phase with < 1% residual C found in the final film. Compound 2 was found to sublime at 160 C and deposited as crystalline material at 300 C with < 1% residual C found in the final film. A comparison to standard alkoxide and {beta}-diketonates is presented where appropriate.

  3. Factors that determine the presence of particles in YBCO films grown by PLD

    NASA Astrophysics Data System (ADS)

    Barrales-Guadarrama, V. R.; Rodríguez-Rodríguez, E. M.; Barrales-Guadarrama, R.; Reyes Ayala, N.

    2017-01-01

    The method of growing thin films PLD, is widely used in applications and possesses great potential in thin YBa2Cu3O7-δ films production with outstanding physical properties. However, it is limited in nano and micro technology due to the presence of particles on the surface of the films. This article describes some causes that create these particles. YBa2Cu3O7-δ films have been grown on electrolytic copper used as a variable model the distance target-substrate. The effects are studied through Scanning Electronic Microscopy. It is observed particles with a large variety of shapes and distributions. The results show that ranging the target-substrate distance, the superficial morphology is modified. An evidence of it, is that the evaporation of dB-S = 7 cm, is more coherent that dB-S = 3 cm. Therefore, exist a relation between the morphology and the parameters of growing. Also affect, the structural change that exists among the substrate and the film formation, the substrate preparation and it must not be monocrystalline, these factors define a kinetic and a mechanism of growing that promotes a heterogeneous nucleation.

  4. The biocompatibility of titanium in a buffer solution: compared effects of a thin film of TiO2 deposited by MOCVD and of collagen deposited from a gel.

    PubMed

    Popescu, Simona; Demetrescu, Ioana; Sarantopoulos, Christos; Gleizes, Alain N; Iordachescu, Dana

    2007-10-01

    This study aims at evaluating the biocompatibility of titanium surfaces modified according two different ways: (i) deposition of a bio-inert, thin film of rutile TiO(2) by chemical vapour deposition (MOCVD), and (ii) biochemical treatment with collagen gel, in order to obtain a bio-interactive coating. Behind the comparison is the idea that either the bio-inert or the bio-active coating has specific advantages when applied to implant treatment, such as the low price of the collagen treatment for instance. The stability in buffer solution was evaluated by open circuit potential (OCP) for medium time and cyclic voltametry. The OCP stabilized after 5.10(4) min for all the specimens except the collagen treated sample which presented a stable OCP from the first minutes. MOCVD treated samples stabilized to more electropositive values. Numeric results were statistically analysed to obtain the regression equations for long time predictable evolution. The corrosion parameters determined from cyclic curves revealed that the MOCVD treatment is an efficient way to improve corrosion resistance. Human dermal fibroblasts were selected for cell culture tests, taking into account that these cells are present in all bio-interfaces, being the main cellular type of connective tissue. The cells grew on either type of surface without phenotype modification. From the reduction of yellow, water-soluble 3-(4,5-dimethyldiazol-2-yl)-2,5-diphenyl tetrazolium bromide (MTT cytotoxicity test), MOCVD treated samples offer better viability than mechanically polished Ti and collagen treated samples as well. Cell spreading, as evaluated from microscope images processed by the program Sigma Scan, showed also enhancement upon surface modification. Depending on the experimental conditions, MOCVD deposited TiO(2) exhibits different nanostructures that may influence biological behaviour. The results demonstrate the capacity of integration in simulated physiologic liquids for an implant pretreated by

  5. Systematic Modification of Electrical and Superconducting Properties of YBCO and Nano-Patterning of High-Tc Superconducting Thin Films by Light-Ion Irradiation

    NASA Astrophysics Data System (ADS)

    Pedarnig, J. D.; Bodea, M. A.; Steiger, B.; Markowitsch, W.; Lang, W.

    Irradiation of high-temperature superconducting (HTS) YBa2Cu3O7-d (YBCO) thin films with 75 keV He+ ions leads to a quasi-exponential increase of the in-plane (ρab) and the out-of-plane (ρc) resistivity in the normal state and to a non-linear decrease of the critical temperature Tc with ion dose. In situ electrical measurements at room temperature reveal an irradiation-induced reduction of resistivity anisotropy ρc/ρab and a slight relaxation of film resistivity after the ion irradiation is stopped. Ex situ measurements show a stretched-exponential relaxation of Tc and normal state resistivity that continues for several weeks after the ion irradiation. Irradiation of YBCO thin films by low-energy He+ ions through stencil masks results in local modification of the electrical and superconducting properties of the HTS material. We demonstrate that masked ion-beam lithography enables to produce structures smaller than 100 nm in size that have potential for applications in future superconducting nano-electronics.

  6. Nanoplough-constrictions on thin YBCO films made with atomic force microscopy.

    PubMed

    Elkaseh, A A O; Büttner, U; Meincken, M; Hardie, G L; Srinivasu, V V; Perold, W J

    2007-09-01

    Utilizing atomic force microscope (AFM) with a diamond tip, we were able to successfully plough nano-constrictions on epitaxially grown YBa2Cu3O(7-x) thin films deposited on MgO substrates. The thickness, width, and length of the obtained constrictions were in the range of a few 100 nm. Furthermore, we managed to produce a new S-type constriction, of which the dimensions are easier to control than for conventional constrictions.

  7. Microstructures of GaN and In{sub x}Ga{sub 1-x}N films grown by MOCVD on free-standing GaN templates

    SciTech Connect

    Jasinski, J.; Liliental-Weber, Z.; Huang, D.; Reshchikov, M.A.; Yun, F.; Morkoc, H.; Sone, C.; Park, S.S.; Lee, K.Y.

    2002-04-30

    We summarize structural properties of thick HVPE GaN templates from the point of view of their application as substrates for growth of nitride layers. This is followed by the results of optical and structural studies, mostly transmission electron microscopy, of nitride layers grown by MOCVD on top of the HVPE substrates. The results indicate high structural quality of these layers with a low density of threading dislocations (in the range of 10{sup 6} cm{sup -2}). Convergent beam electron diffraction studies showed that the MOCVD GaN films have Ga-polarity, the same polarity as the HVPE GaN substrates. Structural studies of an InGaN layer grown on top of the MOCVD GaN film showed the presence of two layers, which differed in lattice parameter and composition. The upper layer, on the top of the structure had a c-lattice parameter about 2% larger than that of GaN and contained 10.3 {+-} 0.8% of In. Values measured for the thinner, intermediate layer adjacent to the GaN layer were about 2 .5 times lower.

  8. Advanced light-scattering materials: Double-textured ZnO:B films grown by LP-MOCVD

    NASA Astrophysics Data System (ADS)

    Addonizio, M. L.; Spadoni, A.; Antonaia, A.

    2013-12-01

    Double-textured ZnO:B layers with enhanced optical scattering in both short and long wavelength regions have been successfully fabricated using MOCVD technique through a three step process. Growth of double-textured structures has been induced by wet etching on polycrystalline ZnO surface. Our double-layer structure consists of a first ZnO:B layer wet etched and subsequently used as substrate for a second ZnO:B layer deposition. Polycrystalline ZnO:B layers were etched by utilizing diluted solutions of fluoridic acid (HF), chloridric acid (HCl) and phosphoric acid (H3PO4) and their effect on surface morphology modification was systematically investigated. The morphology of the second deposited ZnO layer strongly depended on the surface properties of the etched ZnO first layer. Growth of cauliflower-like texture was induced by protrusions presence on the HCl etched surface. Optimized double-layer structure shows a cauliflower-like double texture with higher RMS roughness and increased spectral haze values in both short and long wavelength regions, compared to conventional pyramidal-like single texture. Furthermore, this highly scattering structure preserves excellent optical and electrical properties.

  9. Compact spherical neutron polarimeter using high-T(c) YBCO films.

    PubMed

    Wang, T; Parnell, S R; Hamilton, W A; Li, F; Washington, A L; Baxter, D V; Pynn, R

    2016-03-01

    We describe a simple, compact device for spherical neutron polarimetry measurements at small neutron scattering angles. The device consists of a sample chamber with very low (<0.01 G) magnetic field flanked by regions within which the neutron polarization can be manipulated in a controlled manner. This allows any selected initial and final polarization direction of the neutrons to be obtained. We have constructed a prototype device using high-T(c) superconducting films and mu-metal to isolate regions with different magnetic fields and tested device performance in transmission geometry. Finite-element methods were used to simulate the device's field profile and these have been verified by experiment using a small solenoid as a test sample. Measurements are reported using both monochromatic and polychromatic neutron sources. The results show that the device is capable of extracting sample information and distinguishing small angular variations of the sample magnetic field. As a more realistic test, we present results on the characterization of a 10 μm thick Permalloy film in zero magnetic field, as well as its response to an external magnetic field.

  10. Sign change of the vortex Hall effect in superconducting YBCO thin films with a square pattern of ion-irradiated defect columns

    NASA Astrophysics Data System (ADS)

    Zechner, G.; Haag, L. T.; Lang, W.; Dosmailov, M.; Bodea, M. A.; Pedarnig, J. D.

    2017-02-01

    The Hall effect in the mixed state of thin films of the high-temperature superconductor YBa2Cu3O7-δ (YBCO) that were patterned with a square array of regions with suppressed superconducting order parameter is investigated. Cylindrical defect columns penetrating the entire thin YBCO film along its crystallographic c - axis have been created by irradiation with He+ ions through a silicon stencil mask. Distinct peaks of the critical current at commensurate arrangements of magnetic flux quanta with the artificial defect lattice confirm enhanced vortex pinning. Vortex motion not only leads to a dissipative voltage along the current direction but also to a transverse voltage, termed vortex Hall effect. We report on the observation of a novel commensurability effect in the transverse Hall signal. A sign change and a positive peak of the Hall coefficient appear in a narrow magnetic field range around the matching field. The feature appears in the temperature range below the critical temperature, where the Hall effect usually is negative in underdoped and optimally-doped cuprate superconductors. The results indicate that the Hall matching effect originates from enhanced pinning of the vortices along the regular defect columns.

  11. Synthesis, structure, vapour pressure and deposition of ZnO thin film by plasma assisted MOCVD technique using a novel precursor bis[(pentylnitrilomethylidine) (pentylnitrilomethylidine-μ-phenalato)]dizinc(II)

    NASA Astrophysics Data System (ADS)

    Chandrakala, C.; Sravanthi, P.; Raj Bharath, S.; Arockiasamy, S.; George Johnson, M.; Nagaraja, K. S.; Jeyaraj, B.

    2017-02-01

    A novel binuclear zinc schiff's base complex bis[(pentylnitrilomethylidine)(pentylnitrilomethylidine-μ-phenalato)]dizinc(II) (hereafter referred as ZSP) was prepared and used as a precursor for the deposition of ZnO thin film by MOCVD. The dynamic TG run of ZSP showed sufficient volatility and good thermal stability. The temperature dependence of vapour pressure measured by transpiration technique yielded a value of 55.8 ± 2.3 kJ mol-1 for the enthalpy of sublimation (ΔH°sub) in the temperature range of 423-503 K. The crystal structure of ZSP was solved by single crystal XRD which exhibits triclinic crystal system with the space group of Pī. The molecular mass of ZSP was determined by mass spectrometry which yielded the m/z value of 891 and 445 Da corresponding to its dimeric as well as monomeric form. The complex ZSP was further characterized by FT-IR and NMR. The demonstration of ZnO thin film deposition was carried out by using plasma assisted MOCVD. The thin film XRD confirmed the highly oriented (002) ZnO thin films on Si(100) substrate. The uniformity and composition of the thin film were analyzed by SEM/EDX. The band gap of ZnO thin film measurement indicated the blue shift with the value of 3.79 eV.

  12. Influence of high-temperature AlN intermediate layer on the optical properties of MOCVD grown AlGaN films

    NASA Astrophysics Data System (ADS)

    Xie, Deng; Qiu, Zhi Ren; Liu, Yao; Talwar, Devki N.; Wan, Lingyu; Zhang, Xiong; Mei, Ting; Ferguson, Ian T.; Feng, Zhe Chuan

    2017-02-01

    By combining spectroscopic ellipsometry (SE) and optical transmission (OT) characterization methods we have systematically investigated the influence of AlN intermediate layer and AlN transition layer on the optical properties of AlGaN epilayers grown on sapphire by metalorganic chemical vapor deposition (MOCVD) method. Most dielectric functions of III-nitrides obtained by different research groups show significant band-tail absorption—which is not anticipated for such a direct band gap material. The dielectric functions are studied for a series of AlGaN/AlN/Al2O3 structures, with a four-layer model taking into account both high temperature grown AlN layer and low temperature grown AlN layer. The results obtained by fitting the optical parameters to experimental data show that the band-tail absorption should originate from the transition layer. AlGaN film without high temperature AlN epilayer exhibited a redshift of band gap around 0.24 eV.

  13. High flux pinning efficiency by columnar defects dispersed in three directions in YBCO thin films

    NASA Astrophysics Data System (ADS)

    Sueyoshi, Tetsuro; Nishimura, Takahiro; Fujiyoshi, Takanori; Mitsugi, Fumiaki; Ikegami, Tomoaki; Ishikawa, Norito

    2016-10-01

    A systematic investigation of flux pinning by widely direction-dispersed columnar defects (CDs) in YBa2Cu3O y thin films was carried out by using heavy-ion irradiation: a parallel configuration of CDs aligned along the c-axis, and two trimodal splay configurations composed of CDs crossing at 0° and ± 45° relative to the c-axis, where the splay plane defined by the three irradiation angles is perpendicular (trimodal-A) or parallel (trimodal-B) to the transport current direction. The trimodal configurations show high pinning efficiency over a wide range of magnetic field orientations compared to the parallel one at low magnetic field. In particular, trimodal-B shows the higher critical current density of the two trimodal configurations. The crossed CDs at ± 45° in the trimodal configurations provide uncorrelated flux pinning at B || c due to the large tilting angle off the c-axis, which effectively reinforce the flux pinning of CDs parallel to the c-axis. This assist effect is more remarkable for trimodal-B: a kink sliding motion of flux lines along the CDs is more effectively reduced by the splay plane, not only at B || c but also at inclined magnetic fields off the c-axis.

  14. Nanopatterning and Hot Spot Modeling of YBCO Ultrathin Film Constrictions for THz Mixers

    NASA Astrophysics Data System (ADS)

    Ladret, Romain G.; Degardin, Annick F.; Kreisler, Alain J.

    2013-06-01

    High-TC hot electron bolometers (HEB) are promising THz mixers due to their expected wide bandwidth, large mixing gain, and low intrinsic noise. To achieve this goal, 0.6-μm-size constrictions were patterned on YBaCuO-based, 10-40-nm-thick films grown on (100) MgO substrates, which as previously reported, exhibited good DC superconducting properties. In this paper, we have simulated the DC and mixer characteristics of YBaCuO HEBs with a hot spot model usually dedicated to low-TC devices. For a 100 nm × 100 nm × 10 nm constriction, the expected double sideband noise temperature TN is 2000 K for 5 μW local oscillator (LO) power (G = -13.5 dB conversion gain). For a larger (but more realistic according to YBaCuO aging effects) 600 nm × 1000 nm × 35 nm constriction, TN = 1300 K at 200 μW LO power (G = -12 dB). This approach is expected to allow optimizing the operation of the HEB constriction coupled to a THz planar antenna.

  15. Hardware Modifications to the US Army Research Laboratory’s Metalorganic Chemical Vapor Deposition (MOCVD) System for Optimization of Complex Oxide Thin Film Fabrication

    DTIC Science & Technology

    2015-04-01

    melanie.w.cole.civ@mail.mil. 14. ABSTRACT An introduction to various metalorganic chemical vapor deposition (MOCVD) reactor designs and precursor...flow and chemical reactions occurring in the reactor chamber at the substrate surface. A substantial amount of research has been dedicated to...coupled showerhead MOCVD reactor . Microelectronics Journal. 2009;40:280–282. 8. Wessels BW. Metal-organic chemical -vapor-deposition of ferroelectric

  16. Metal-Organic Chemical Vapor Deposition (MOCVD) Synthesis of Heteroepitaxial Pr0.7Ca0.3MnO3 Films: Effects of Processing Conditions on Structural/Morphological and Functional Properties

    PubMed Central

    Catalano, Maria R; Cucinotta, Giuseppe; Schilirò, Emanuela; Mannini, Matteo; Caneschi, Andrea; Lo Nigro, Raffaella; Smecca, Emanuele; Condorelli, Guglielmo G; Malandrino, Graziella

    2015-01-01

    Calcium-doped praseodymium manganite films (Pr0.7Ca0.3MnO3, PCMO) were prepared by metal-organic chemical vapor deposition (MOCVD) on SrTiO3 (001) and SrTiO3 (110) single-crystal substrates. Structural characterization through X-ray diffraction (XRD) measurements and transmission electron microscopy (TEM) analyses confirmed the formation of epitaxial PCMO phase films. Energy dispersive X-ray (EDX) and X-ray photoelectron spectroscopy (XPS) characterization was used to confirm lateral and vertical composition and the purity of the deposited films. Magnetic measurements, obtained in zero-field-cooling (ZFC) and field-cooling (FC) modes, provided evidence of the presence of a ferromagnetic (FM) transition temperature, which was correlated to the transport properties of the film. The functional properties of the deposited films, combined with the structural and chemical characterization collected data, indicate that the MOCVD approach represents a suitable route for the growth of pure, good quality PCMO for the fabrication of novel spintronic devices. PMID:26478849

  17. Magnetorefractive effect in the La1-xKxMnO3 thin films grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Sukhorukov, Yu. P.; Telegin, A. V.; Bessonov, V. D.; Gan'shina, E. A.; Kaul', A. R.; Korsakov, I. E.; Perov, N. S.; Fetisov, L. Yu.; Yurasov, A. N.

    2014-10-01

    Thin epitaxial La1-хKхMnO3 films were grown using two-stage procedure. Influence of substitution of La3+ ions with K+ ions on the optical and electrical properties of La1-xKxMnO3 films (х=0.05, 0.10, 0.15 и 0.18) has been studied in detail. A noticeable magnetorefractive effect in the films under study was detected in the infrared range. Magnetorefractive effect as well as transverse magneto-optical Kerr effect and magnetoresistance have the maximum in optimally doped sample with x=0.18 corresponding to the highest Curie temperature. The experimental data for compositions close to optimally doped films are in good agreement with the data calculated in the framework of a theory developed for manganites. The resonance-like contribution to magnetoreflection spectra of manganite films has been observed in the vicinity of the phonon bands. It is shown that magnetic and charge inhomogeneities strongly influence on the magneto-optical effects in films. Thin films of La1-xKxMnO3 with the large values of Kerr and magnetorefractive effect are promising magneto-optical material in the infrared range.

  18. Cobalt (II) β-diketonate adducts as new precursors for the growth of cobalt oxide films by liquid injection MOCVD

    NASA Astrophysics Data System (ADS)

    Pasko, S.; Abrutis, A.; Hubert-Pfalzgraf, L. G.; Kubilius, V.

    2004-02-01

    New metalorganic compounds—adducts of cobalt(II) acetylacetonate (acac) and cobalt(II) 2,2,6,6-tetramethyl-3,5-heptanedionate (thd) with N,N,N',N'-tetramethyl-1,2-diaminoethane have been synthesized and studied as potential precursors for liquid injection metalorganic chemical vapor deposition of Co 3O 4 films. The properties of the films were compared with those deposited using standard [Co(acac) 2] 4 and Co(thd) 2 precursors. Depositions were carried out at 350-600°C on LaAlO 3 (1 0 0), sapphire (R-plane), MgO (1 0 0) and Si (1 0 0) substrates. The films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy and atomic force microscopy. Depending on substrate material, highly (1 1 0) or (1 0 0) textured Co 3O 4 films have been deposited; moreover, films exhibited preferential in-plane orientation. No significant difference has been found in the quality of Co 3O 4 films deposited from different precursors.

  19. Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD

    PubMed Central

    2014-01-01

    Indium gallium nitride (InGaN) samples with single heterojunction (SH) and double heterojunction (DH) were prepared using metal-organic chemical vapor deposition. SH has a layer of InGaN thin film (thicknesses, 25, 50, 100, and 200 nm) grown on an uGaN film (thickness, 2 μm). The DH samples are distinguished by DH uGaN film (thickness, 120 nm) grown on the InGaN layer. Reciprocal space mapping measurements reveal that the DH samples are fully strained with different thicknesses, whereas the strain in the SH samples are significantly relaxed with the increasing thickness of the InGaN film. Scanning electron microscopy results show that the surface roughness of the sample increases when the sample is relaxed. High-resolution transmission electron microscopy images of the structure of indium droplets in the DH sample indicate that the thickness of the InGaN layer decreases with the density of indium droplets. The formation of these droplets is attributed to the insufficient kinetic energy of indium atom to react with the elements of group V, resulting to aggregation. The gallium atoms in the GaN thin film will not be uniformly replaced by indium atoms; the InGaN thin film has an uneven distribution of indium atoms and the quality of the epitaxial layer is degraded. PMID:25024692

  20. BST Films Grown by Metal Organic Chemical Vapor Deposition Incorporating Real-Time Control of Stoichiometry

    DTIC Science & Technology

    2009-01-01

    grow multi-component oxide films including YBCO and ferroelectric PBT. In this paper, we describe preliminary studies of MOCVD growth of BST films...320 nm . These values as well as those for Ti and Bar are also summarized in Table 1. Table 1 Bubbler temperatures and UV absorption spectral windows...Precursor Tbubbler(◦C) UV Spectral Window ( nm ) Ba(thd) 237 260–235 Sr(thd) 232–235 250–320 Ti(thd2) 135–150 290–335 D ow nl oa de d by [ T & F In

  1. Preparation and characterization of Al{sub 2x}In{sub 2−2x}O{sub 3} films deposited on MgO (1 0 0) by MOCVD

    SciTech Connect

    Li, Zhao; Ma, Jin Zhao, Cansong; Du, Xuejian; Mi, Wei; Luan, Caina; Feng, Xianjin

    2015-07-15

    Highlights: • Ternary Al{sub 2x}In{sub 2−2x}O{sub 3} alloy films were deposited on MgO (1 0 0) by MOCVD. • The microstructure of the Al{sub 2x}In{sub 2−2x}O{sub 3} films were studied upon HRTEM. • Al{sub 2x}In{sub 2−2x}O{sub 3} alloy films exhibited great optical transparency in the visible wavelength range. • The band gap of the Al{sub 2x}In{sub 2−2x}O{sub 3} films can be modulated by controlling the Al contents in the samples. - Abstract: The ternary Al{sub 2x}In{sub 2−2x}O{sub 3} films with different compositions x[Al/(Al + In) atomic ratio] have been fabricated on the MgO (1 0 0) substrates by the metal organic chemical vapor deposition (MOCVD) method. The influence of different Al contents on the structural, optical and electrical properties of Al{sub 2x}In{sub 2−2x}O{sub 3} films has been studied. The structural studies reveal a change from single crystalline structure of cubic In{sub 2}O{sub 3} to amorphous as the Al content increases. The average transmittances of all samples in the visible range are over 80%. The optical band gap is observed to increase monotonically from 3.67 to 5.38 eV as the Al content increases from 0.1 to 0.9.

  2. Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD

    NASA Astrophysics Data System (ADS)

    Liang, F.; Chen, P.; Zhao, D. G.; Jiang, D. S.; Zhao, Z. J.; Liu, Z. S.; Zhu, J. J.; Yang, J.; Liu, W.; He, X. G.; Li, X. J.; Li, X.; Liu, S. T.; Yang, H.; Liu, J. P.; Zhang, L. Q.; Zhang, Y. T.; Du, G. T.

    2016-09-01

    Photoelectron spectroscopy has been employed to analyze the content and chemical states of the elements on the surface of AlN films with different thickness, which are synthesized by metalorganic chemical vapor deposition on the n-type SiC substrates under low pressure. It is found that, besides the carbon and gallium on the AlN surface, the atom percentage of surface oxygen increases from 4.9 to 8.4, and the electron affinity also increases from 0.36 to 0.97 eV, when the thickness of AlN films increase from 50 to 400 nm. Furthermore, accompanying with the high-resolution XPS spectra of the O 1s, it is speculated that surface oxygen may be the major influence on the electron affinity, where the surface oxygen changes the surface chemical states through replacing N to form Al-O bond and Ga-O bond, although there are also a few of Ga and C contaminations in the chemical sate of Ga-O and C-C, respectively.

  3. Structural Characterization of the Ag/ybco Interface

    NASA Astrophysics Data System (ADS)

    Tidjani, Mohammed Elkhamis

    1990-01-01

    The present research is intended to characterize the interface microstructure and long term stability of the deposited silver metal in contact to the superconducting oxide YBa_2Cu_3O _{rm 7-x} (YBCO). High resolution transmission electron microscopy (HRTEM) observations of the interfacial regions reveal that Ag contacts to YBCO occurred without any intermediate phase formation at the interface. The Ag metal exhibits a preferred orientation relationship with YBCO, in which the densely packed planes and directions of the metal are parallel to those of the superconductor. The formation of (111) interfaces and facets during deposition indicates that these planes are associated with the lowest interfacial energy. The as-deposited Ag film exhibits a granular morphology, and the Ag grains are often twinned along the (111) plane while the surface of YBCO is mostly rough and structurally unstable. Annealing of the Ag/YBCO interface resulted in outdiffusion of yttrium and oxygen at regions where the surface of YBCO was rough. This diffusion, however, did not result in the formation of continuous layers at the Ag/YBCO interface but only to growth of Ag_2 Y and Ag_2O inclusions. Thus it is believed that the stability of the Ag/YBCO depends on the quality of the surface of YBCO, especially its structure. Treatment of the surface of YBCO by ion-bombardment yielded flat surfaces but damaged a layer of about 30A. Such a cleaning process improved the quality of the deposited Ag since the Ag grains were larger and contained low defects concentration. The same orientation relationships between Ag and YBCO were observed after cleaning the surface of YBCO which implied that the destruction of the structure at the surface is only partial. Deposition of Ag in the same chamber where YBCO was initially grown, to minimize the contamination of the surface of YBCO, also was not effective in enhancing the structure of the Ag/YBCO interface. The roughness of the surface of YBCO did not decrease

  4. Effect of Co-doping on Microstructural, Crystal Structure and Optical Properties of Ti1-xCOxO2 Thin films Deposited on Si Substrate by MOCVD Method

    NASA Astrophysics Data System (ADS)

    Supriyanto, E.; Sutanto, H.; Subagio, A.; Saragih, H.; Budiman, M.; Arifin, P.; Sukirno, Barmawi, M.

    2008-03-01

    Ti1-xCOxO2 thin films have been grown on n-type Si(100) substrates by metal organic vapor deposition (MOCVD) using titanium (IV) isopropoxide (TTIP) and tris (2,2,6,6-tetramethyl-3, 5-heptanedionato) cobalt (III) as metal organic precursors. The parameter deposition, such as: bubbler temperature of TTIP Tb(Ti) = 50 °C; substrate temperature Ts = 450 °C; bubbler pressure Pb(Ti) = 260 Torr; flow rate of Ar gas through TTIP precursor Ar(Ti) = 100 sccm (standard cubic centimeters per minute) and flow rate of oxygen gas O2 = 60 sccm were found as optimal deposition parameters. The thin films deposited were have rutile (002) crystal plane, whereas those deposited at other parameter were mixing of anatase and rutile phases. Co dopant with concentration of up to 5.77% was not changes the structure of TiO2. Increase of Co incorporated in thin films was decreasing of band-gap energy.

  5. Flux pinning properties in YBCO films with growth-controlled nano-dots and heavy-ion irradiation defects

    NASA Astrophysics Data System (ADS)

    Sueyoshi, T.; Kotaki, T.; Uraguchi, Y.; Suenaga, M.; Makihara, T.; Fujiyoshi, T.; Ishikawa, N.

    2016-11-01

    In order to clarify the influence of size and spatial distribution of three-dimensional pinning centres (3D-PCs) on hybrid flux pinning, columnar defects (CDs) were installed by using 200 MeV Xe ions along the c-axis direction into quasi-multilayered films consisting of YBa2Cu3Oy layers and pseudo layers of BaSnO3. The positive effect of the BaSnO3 doping on the hybrid flux pinning stands out for the critical current density Jc around B || c in high magnetic field and/or inclined magnetic field off the c-axis, which is more remarkable for the multilayered film grown at higher temperature, possibly due to larger BaSnO3 nano-dots. In the case of the in-plane distributed BaSnO3 nano-dots, the Jc around B || ab is remarkably enhanced, whereas there is a detrimental effect on the Jc around B || c. These imply that the tuning of 3D-PCs is one of the keys to improve the Jc at all magnetic field orientations for the hybrid flux pinning.

  6. Mechanism of thickness dependence of critical current density in HTS YBCO film and its elimination using nano-engineering

    NASA Astrophysics Data System (ADS)

    Wang, Xiang

    The most promising characteristic of a High Temperature Superconductor (HTS) is its ability to carry larger electrical current at liquid nitrogen boiling temperature and strong applied magnetic field with minimal dissipation. Numerous large scale applications such as HTS transmission cables, HTS magnets and HTS motors have been developed using HTS materials. The major limitation that prevents its wide commercialization is its high cost-to-performance ratio. However, the effort to further improve HTS current carrying capability is jeopardized by a mysterious thickness dependence of the critical current density (Jc) --- Jc monotonically decreases with increasing thickness (t) at 77 K and self-field (SF). This poses a great challenge for both HTS applications and the understanding of vortex dynamics. What further complicates this issue is the complex defect structure in HTS films as well as the creep nature of magnetic vortices at a finite temperature. After a systematic study of the temperature and magnetic field effects on Jc--t, we conclude that Jc--t is most likely the result of a collective pinning effect dictated by a random pinning potential. Besides that, thermal fluctuations also alter Jc--t in a predictable way. Therefore, by either modifying the vortex structure or pinning structure, J c--t can be eliminated. Indeed, a thin film J c has been restored in a HTS/insulator/HTS trilayer while the magnetic coupling is weakened. Moreover, Jc--t has been removed when the random distributed point pins are overpowered by strong linear defects.

  7. Mocvd of Tin Oxide for Gas Sensors.

    NASA Astrophysics Data System (ADS)

    Weglicki, Peter Stanislaw

    1990-01-01

    Available from UMI in association with The British Library. Requires signed TDF. Thin films of a wide variety of materials can be produced using an assortment of physical and chemical techniques. Such techniques are reviewed and compared, with particular reference to the deposition of tin oxide films. In the present study, MOCVD (Metal organic chemical vapour deposition) was used to grow thin films of tin oxide from dibutyltin diacetate precursor on a variety of substrates. A series of reactor prototypes were developed in accordance with specific requirements of reproducibility and process control. The evolution of the designs leading to the final working system is detailed. The theory of MOCVD is given with particular reference to the reactor used in this project. The effects of various deposition parameters on tin oxide film growth rates were investigated, and the results are discussed with reference to the deposition kinetics in the system. Films were characterised by optical interferometry, optical and electron microscopy, X-ray diffraction, Rutherford backscattering and electrical measurements. The films were generally uniform, conducting and polycrystalline, and were comprised of very small grains, resulting in a high density. A specific application of metal oxide materials is in solid state gas sensors, which are available in various forms and operate according to different mechanisms. These are compared and a detailed account is given on the theory of operation of surface conductivity modulated devices. The application of such devices based on tin oxide in thin film form was investigated in the present work. The prepared sensor samples were comprised of very small grains, resulting in a high density. The observation that preferred (310) orientation occured in thicker films, can be attributed to dendritic growth. The sensors generally showed response to numerous reducing gas ambients, although there was evidence of a degree of selectivity against methane

  8. Grain morphology of YBCO coated superconductors prepared by spin process on Ni substrate

    NASA Astrophysics Data System (ADS)

    Liu, C. F.; Du, S. J.; Yan, G.; Xi, W.; Wu, X.; Pang, Y.; Wang, F. Y.; Liu, X. H.; Feng, Y.; Zhang, P. X.; Wu, X. Z.; Zhou, L.

    2003-04-01

    The YBCO thick films with c-axis preferred orientation were prepared by spin and printing processes on Ni substrates (including cold rolling Ni, cube textured Ni, and cube textured Ni+ self-oxided NiO ). The results show that the chrysanthemum (or spherulite) and polygon morphology grains dominate the microstructure of YBCO films. The chrysanthemum size is about 0.2-0.5 mm range, some reaches 1 mm, and polygon grains normally are placed in the center of the chrysanthemum grains. No chrysanthemum grains appear in the thick films prepared on the substrate with Ag or YBCO intermediate layers.

  9. Electro-optic materials by solid source MOCVD

    SciTech Connect

    Hiskes, R.; Dicarolis, S.A.; Fouquet, J.; Lu, Z.; Feigelson, R.S.; Route, R.K.; Leplingard, F.; Foster, C.M.

    1993-12-01

    The solid source MOCVD technique, employing a single powder vaporization source composed of mixed beta-diketonate metalorganic compounds, has been used to grow thin films of a variety of electro-optic materials, including lithium niobate, strontium barium niobate, and potassium niobate. Preliminary results for potassium niobate films indicate that a volatile potassium organometallic source can be synthesized useful for growing potassium niobate by MOCVD. High single phase (001) oriented strontium barium niobate films have been deposited which exhibit waveguiding behavior. The most extensive work has been done on lithium niobate deposited epitaxially on a variety of substrates. Oriented z-axis (001) films have been grown on c-axis sapphire with and without a (111) oriented platinum base electrode and on a bulk grown lithium niobate substrate. Films grown directly on c-axis sapphire at 700 C exhibit x-ray rocking curve linewidths as low as .044 degrees, nearly perfect in-plane orientation as determined by x-ray phi scans, and peak-to-peak surface roughness less than 40 {Angstrom}. Optical waveguiding has been demonstrated by single prism coupling technique on similar films 1175--2000 {Angstrom} thick grown at 500 C, with optical losses of approximately 2 db/cm at 632.8 nm measured over 3.5 cm long films. Polarization vs. electric field measurements on 1100 {Angstrom} thick films grown on platinum show a hysteresis loop indicating ferroelectric behavior.

  10. Growth and characterization of CdS buffer layers by CBD and MOCVD

    SciTech Connect

    Morrone, A.A.; Huang, C.; Li, S.S.

    1999-03-01

    Thin film CdS has been widely used in thin-film photovoltaic devices. The most efficient Cu(In,&hthinsp;Ga)Se{sub 2} (CIGS) solar cells reported to date utilized a thin CdS buffer layer prepared by a reactive solution growth technique known as chemical bath deposition (CBD). Considerable effort has been directed to better understand the role and find a replacement for the CBD CdS process in CIGS-based solar cells. We reported a low temperature ({approximately}150&hthinsp;{degree}C) Metalorganic Chemical Vapor Deposition (MOCVD) CdS thin film buffer layer process for CIGS absorbers. Many prior studies have reported that CBD CdS contains a mixture of crystal structures. Recent investigations of CBD CdS thin films by ellipsometry suggested a multilayer structure. In this study we compare CdS thin films prepared by CBD and MOCVD and the effects of annealing. TED and XRD are used to characterize the crystal structure, the film microstructure is studied by HRTEM, and the optical properties are studied by Raman and spectrophotometry. All of these characterization techniques reveal superior crystalline film quality for CdS films grown by MOCVD compared to those grown by CBD. Dual Beam Optical Modulation (DBOM) studies showed that the MOCVD and CBD CdS buffer layer processes have nearly the same effect on CIGS absorbers when combined with a cadmium partial electrolyte aqueous dip. {copyright} {ital 1999 American Institute of Physics.}

  11. Flux Pinning Enhancement in YBa2Cu3O7-x Films with BaSnO3 Nanoparticles

    DTIC Science & Technology

    2008-10-01

    YBCO +BaSnO3 samples of different thickness (240, 317, 359 nm ) were compared with two standard ∼300 nm thick YBCO films on a ( 100 ... YBCO + BaSnO3 nanoparticle film. Films were deposited on ( 100 ) lanthanum aluminate single crystal substrates (LaAlO3) to investigate the flux pinning...LAO (Sample 3) YBCO /STO YBCO /LAO YBCO /LAO YBCO /STO YBCO +BaSnO 3 /LAO 106 105 104 1000 100 10 0 2 4 6 8 10 1 Magnetic Field H(T) J c

  12. A Simple Method for the Growth of Very Smooth and Ultra-Thin GaSb Films on GaAs (111) Substrate by MOCVD

    NASA Astrophysics Data System (ADS)

    Ni, Pei-Nan; Tong, Jin-Chao; Tobing, Landobasa Y. M.; Qiu, Shu-Peng; Xu, Zheng-Ji; Tang, Xiao-Hong; Zhang, Dao-Hua

    2017-02-01

    We present a simple thermal treatment with the antimony source for the metal-organic chemical vapor deposition of thin GaSb films on GaAs (111) substrates for the first time. The properties of the as-grown GaSb films are systematically analyzed by scanning electron microscopy, atomic force microscopy, x-ray diffraction, photo-luminescence (PL) and Hall measurement. It is found that the as-grown GaSb films by the proposed method can be as thin as 35 nm and have a very smooth surface with the root mean square roughness as small as 0.777 nm. Meanwhile, the grown GaSb films also have high crystalline quality, of which the full width at half maximum of the rocking-curve is as small as 218 arcsec. Moreover, the good optical quality of the GaSb films has been demonstrated by the low-temperature PL. This work provides a simple and feasible buffer-free strategy for the growth of high-quality GaSb films directly on GaAs substrates and the strategy may also be applicable to the growth on other substrates and the hetero-growth of other materials.

  13. YSZ buffer layers and YBCO superconducting tapes with enhanced biaxial alignment and properties

    NASA Astrophysics Data System (ADS)

    Savvides, N.; Gnanarajan, S.

    2003-05-01

    Commercial applications of YBa 2Cu 3O 7 (YBCO) superconducting cables require viable and scalable manufacturing processes. We have investigated the evolution of the biaxial alignment of yttria-stabilized zirconia (YSZ) buffer layers with increasing film thickness (50-900 nm) and report on a method of fabricating highly aligned YBCO tapes using a thin epitaxial YSZ buffer layer as template. The method employs magnetron and ion beam assisted deposition (IBAD) techniques followed by epitaxial growth to produce the buffer architectures IBAD-YSZ and epi-YSZ/IBAD-YSZ onto optically polished hastelloy metal substrates. Subsequent in situ deposition of YBCO films is used to determine the biaxial alignment at the surface of the buffer architecture, and to show that 100-200 nm thick epi-YSZ layers suffice to yield YBCO tapes that have enhanced biaxial alignment (Δ φ=9-10°) and high critical current densities: J c(77 K)=(1-2)×10 6 A cm -2 and J c(5 K,1 T)=8×10 6 A cm -2. Atomic force microscopy of the surface microstructure of the YSZ buffer layers and YBCO films reveals some grain coarsening in the epi-YSZ layers compared to the IBAD-YSZ layers while the YBCO tapes show significant outgrowths (∼200 nm) and large grains (800-1200 nm) that are similar to high- Jc YBCO films grown on single crystal MgO(1 0 0) substrates.

  14. Nanoparticulate Flux Pinning Centers for YBa2Cu3O7-delta Films (Postprint)

    DTIC Science & Technology

    2012-02-01

    compares recent efforts by the U.S. Air Force Research Laboratory to incorporate insulating nanoparticles into the YBCO superconducting thin films...to incorporate insulating nanoparticles into the YBCO superconducting thin films by pulsed laser deposition. Index Terms—Flux pinning, high-temperature...superconductors (HTS), rare earth doping, YBCO . I. INTRODUCTION THE pinning properties of ( YBCO ) makethis superconductor desirable for use in

  15. MOCVD of BN and GaN thin films on silicon: new attempt of GaN growth with BN buffer layer

    NASA Astrophysics Data System (ADS)

    Boo, Jin-Hyo; Rohr, Carsten; Ho, Wilson

    1998-06-01

    Highly oriented polycrystalline h-BN thin films were deposited on silicon substrates in the temperature range of 600-900°C from the single molecular precursor of borane-triethylamine complex, (C 2H 5) 3N : BH 3, by supersonic jet assisted chemical vapor deposition. Hydrogen was used as carrier gas, and additional nitrogen was supplied by either ammonia through a nozzle or nitrogen via a remote microwave plasma. Hexagonal GaN films were also grown on Si(1 0 0) with h-BN buffer layers at temperatures between 550 and 750°C with dual supersonic molecular beam sources. Triethylgallium, (C 2H 5) 3Ga, and ammonia, NH 3, were used as precursors. Hydrogen was used as seeding gas for the precursors, providing a wide range of possible kinetic energies for the supersonic beams. The h-BN buffer layers and the GaN films were characterized in situ by Auger electron spectroscopy (AES), and ex situ by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and optical transmission. This is the first report of growing the h-BN films on silicon substrates from the single source precursor of borane-triethylamine complex and new attempts of GaN film growth on silicon with BN buffer layer.

  16. Effect of deposition conditions on the stoichiometry and structural properties of LiNbO3 thin films deposited by MOCVD

    NASA Astrophysics Data System (ADS)

    Margueron, Samuel; Bartasyte, Ausrine; Plausinaitiene, Valentina; Abrutis, Adulfas; Boulet, Pascal; Kubilius, Virgaudas; Saltyte, Zita

    2013-03-01

    Epitaxial LiNbO3 thin films were deposited on C-sapphire substrates by pulsed injection metal organic chemical vapor deposition and atmospheric pressure metal organic chemical vapor deposition. The effect of deposition conditions, such as the ratio of Li/Nb precursors in solution and the deposition pressure, on the phase composition, Li nonstoichiometry, texture, epitaxial quality, residual stresses and formation of twins in LiNbO3 films was studied by means of X-ray diffraction and Raman spectroscopy. It was found that the deposition pressure played an important role in the incorporation of Li2O in the film and the formation of in-plane and out-of-plane twins.

  17. Soft nanostructuring of YBCO Josephson junctions by phase separation.

    PubMed

    Gustafsson, D; Pettersson, H; Iandolo, B; Olsson, E; Bauch, T; Lombardi, F

    2010-12-08

    We have developed a new method to fabricate biepitaxial YBa2 Cu3 O7-δ (YBCO) Josephson junctions at the nanoscale, allowing junctions widths down to 100 nm and simultaneously avoiding the typical damage in grain boundary interfaces due to conventional patterning procedures. By using the competition between the superconducting YBCO and the insulating Y2 BaCuO5 phases during film growth, we formed nanometer sized grain boundary junctions in the insulating Y2 BaCuO5 matrix as confirmed by high-resolution transmission electron microscopy. Electrical transport measurements give clear indications that we are close to probing the intrinsic properties of the grain boundaries.

  18. Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC

    NASA Astrophysics Data System (ADS)

    Liang, F.; Chen, P.; Zhao, D. G.; Jiang, D. S.; Liu, Z. S.; Zhu, J. J.; Yang, J.; Liu, W.; He, X. G.; Li, X. J.; Li, X.; Liu, S. T.; Yang, H.; Zhang, L. Q.; Liu, J. P.; Zhang, Y. T.; Du, G. T.

    2016-05-01

    A large field emission current density of 2.55 A/cm2 at 20.9 V and a low turn-on voltage of 7.28 V is obtained from the Si-doped 50 nm-thick AlN film, synthesized by metalorganic chemical vapor deposition on the n-type SiC substrates, which is the best result reported for AlN film. Accompanying with atomic force surface micro-images, it is found that this current is achieved owing to a blunting process under a high voltage of 95 V, which can lead to a decrease of the root mean square roughness from 4.23 to 1.03 nm.

  19. Microwave absorption studies on high-T sub c superconductors and related materials 7--ESR of DPPH coated on a thin BiSrCaCuO film fabricated on MgO(100) substrate

    SciTech Connect

    Sugawara, K.; Sugimoto, T.; Shiohara, Y.; Tanaka, S. )

    1992-05-10

    In this paper, ESR of DPPH coated on a Bi-Sr-Ca-Cu-O (BSCCO) film (350 {Angstrom} thick) fabricated on MgO(100) substrate by MOCVD is studied. Temperature dependence of the ESR peak-to-peak linewidth, {Delta}H{sub pp}, and the effect of applied magnetic field on {Delta}H{sub pp} are below about 100 K. The results are compared with those of ESR of DPPH coated on ceramic Y-Ba-Cu-O samples (powder and bulk) made by the MPMG method. The DPPH ESR for the BSCCO film reveals that {Delta}H{sub pp} was independent of applied magnetic field up to about 9 kG. In addition, no similarity between the temperature dependence of the excess ESR linewidth of the DPPH and that of critical current density was found for the BSCCO film. These results for the BSCCO film are different from those for the MPMG YBCO samples.

  20. Preparation and characterization of YBCO coating on metallic RABiT substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Gonal, M. R.; Prajapat, C. L.; Igalwar, P. S.; Maji, B. C.; Singh, M. R.; Krishnan, M.

    2016-05-01

    Superconducting YBCO films are coated on metallic Rolling Assisted Bi-axially Textured Substrates (RABiTS) Ni-5wt % W (NiW) (002) substrate using pulsed laser deposition (PLD) system. Targets of YBa2Cu3O7-δ (YBCO) and buffer layers of Ceria and 8 mole % Yttria Stabilized Zirconia (YSZ) of high density are synthesized. At each stage of deposition coatings are characterized by XRD. Transport studies show superconducting nature of YBCO only when two successive buffer layers of YSZ and CeO2 are used.

  1. Quasiparticle dynamics in YBCO and YBCO/LSMO Using Femtosecond Optical Pulses

    NASA Astrophysics Data System (ADS)

    Lee, J.; Talbayev, D.; Xiong, J.; Zhu, J.; Jia, Q.; Taylor, A. J.; Prasankumar, R. P.

    2012-02-01

    The properties of various complex oxide systems, such as multiferroics, high-Tc superconductors and colossal magnetoresistance manganites, have been extensively studied for the past ˜25 years. In particular, the interplay between superconductivity (SC) and ferromagnetism (FM) is interesting from both academic and applied viewpoints. we have temporally resolved quasiparticle dynamics in multilayered films composed of the high-temperature superconductor YBCO and the ferromagnetic manganite LaSrMnO3 (LSMO) by performing temperature-dependent UOS experiments. In YBCO alone, we observed two distinct decay relaxation channels that have previously been related to the pseudogap and superconducting gaps and can be explained with the phenomenological Rothwarf-Taylor (RT) model. However, the fast sub-picosecond relaxation related to the pseudogap was not observed in our YBCO/LSMO heterostructures, possibly due to the influence of FM order These first UOS experiments on SC/FM heterostructures demonstrate the ability of UOS to quantify the influence of ferromagnetism on superconductivity through time domain measurements.

  2. Investigation on orientation, epitaxial growth and microstructure of a-axis-, c-axis-, (103)/(110)- and (113)-oriented YBa2Cu3O7-δ films prepared on (001), (110) and (111) SrTiO3 single crystal substrates by spray atomizing and coprecipitating laser chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhao, Pei; Wang, Ying; Huang, Zhi liang; Mao, Yangwu; Xu, Yuan Lai

    2015-04-01

    a-axis-, c-axis-, (103)/(110)- and (113)-oriented YBa2Cu3O7-δ (YBCO) films were pareared by spray atomizing and coprecipitating laser chemical vapor deposition. The surface of the a-axis-oriented YBCO film consisted of rectangular needle-like grains whose in-plane epitaxial growth relationship was YBCO [100] // STO [001] (YBCO [001] // STO [100]), and that of the c-axis-oriented YBCO film consisted of dense flat surface with epitaxial growth relationship of YBCO [001] // STO [001] (YBCO [100] //STO [100]). For the (103)/(110)-oriented and (113)-oriented YBCO film, they showed wedge-shaped and triangle-shaped grains, with corresponding in-plane epitaxial growth relationship of YBCO [110] // STO [110] (YBCO [010] // STO [010]) and YBCO [100] // STO [100] (YBCO [113] // STO [111], respectively.

  3. Development of YBCO Superconductor for Electric Systems: Cooperative Research and Development Final Report, CRADA Number CRD-04-150

    SciTech Connect

    Bhattacharya, R.

    2013-03-01

    The proposed project will be collaborative in exploration of high temperature superconductor oxide films between SuperPower, Inc. and the National Renewable Energy Laboratory. This CRADA will attempt to develop YBCO based high temperature oxide technology.

  4. Epitaxial Pb(Zr{sub x}Ti{sub 1{minus}x})O{sub 3}/SrRuO{sub 3} (x = 0, 0.35, 0.65) multilayer thin films on SrTiO{sub 3}(100) and MgO(100) prepared by MOCVD and RF sputtering

    SciTech Connect

    Foster, C.M.; Csencsits, R.; Baldo, P.M.; Bai, G.R.; Li, Z.; Rehn, L.E.; Wills, L.A.; Hiskes, R.

    1995-02-01

    Epitaxial SrRuO{sub 3} thin films were deposited on SrTiO{sub 3}(100) and MgO(100) substrates by RF sputtering for use as bottom electrodes and epitaxial buffer layers. On these conductive substrates, epitaxial Pb(Zr{sub x}Ti{sub 1{minus}x})O{sub 3} (PZT; x = 0.35,0.65) and PbTiO{sub 3} (PT; x = 0) thin films were deposited by metalorganic chemical vapor deposition (MOCVD). X-ray diffraction (XRD), RBS channeling (RBS), transmission electron microscopy (TEM) and optical waveguiding were used to characterize the phase, microstructure, defect structure, refractive index, and film thickness of the deposited films. The PZT and PT films were epitaxial and c-axis oriented. 90{degree} domains, interfacial misfit dislocations and threading dislocations were the primary structural defects, and the films showed as high as a 70% RBS channeling reduction. Ferroelectric hysteresis and dielectric measurements of epitaxial PZT ferroelectric capacitor structures formed using evaporated Ag top electrode showed: a remanent polarization of 46.2 {mu}C/cm{sup 2}, a coercive field of 54.9 kV/cm, a dielectric constant of 410, a bipolar resistivity of {approximately}5.8 {times} 10{sup 9} {Omega}-cm at a field of 275 kV/cm, and a breakdown strength of >400 kV/cm. Cyclic fatigue measurements showed that the remanent polarization was maintained for >10{sup 9} cycles.

  5. Thick YBa2Cu3O7-x BaSnO3 Films with Enhanced Critical Current Density at High Magnetic Fields

    DTIC Science & Technology

    2008-10-01

    thick YBCO +BSO film had a Jc ~3×105 A/cm2 at 5 T as compared to a typical Jc of 2.4×103 A/cm2 at 5 T for a 300- nm -thick YBCO film. The thick YBCO +BSO...for a 300 nm thick YBCO film. The thick YBCO +BSO films maintained high Tc 88 K and had a high density 2.51011 /cm2 of continuous BSO nanocolumns...nanocolumns to maintain a high Jc in high magnetic fields without a reduction in Tc. Recently 300 nm thick YBCO +BSO nanocomposite films were processed using

  6. Monitoring of MOCVD reactants by UV absorption

    SciTech Connect

    Baucom, K.C.; Killeen, K.P.; Moffat, H.K.

    1995-07-01

    In this paper, we describe how UV absorption measurements can be used to measure the flow rates of metal organic chemical vapor deposition (MOCVD) reactants. This method utilizes the calculation of UV extinction coefficients by measuring the total pressure and absorbance in the neat reactant system. The development of this quantitative reactant flow rate monitor allows for the direct measurement of the efficiency of a reactant bubbler. We demonstrate bubbler efficiency results for TMGa, and then explain some discrepancies found in the TMAl system due to the monomer to dimer equilibrium. Also, the UV absorption spectra of metal organic and hydride MOCVD reactants over the wavelength range 185 to 400 nm are reported.

  7. Observation of the nonlinear meissner effect in YBCO thin films: evidence for a D-wave order parameter in the bulk of the cuprate superconductors.

    PubMed

    Oates, D E; Park, S-H; Koren, G

    2004-11-05

    We present experimental evidence for the observation of the nonlinear Meissner effect in high-quality epitaxial yttrium barium copper oxide thin films by measuring their intermodulation distortion at microwave frequencies versus temperature. Most of the films measured show a characteristic increase in nonlinearity at low temperatures as predicted by the nonlinear Meissner effect. We could measure the nonlinear Meissner effect because intermodulation distortion measurements are an extremely sensitive method that can detect changes in the penetration depth of the order of 1 part in 10(5).

  8. A novel MOCVD reactor for growth of high-quality GaN-related LED layers

    NASA Astrophysics Data System (ADS)

    Hu, Shaolin; Liu, Sheng; Zhang, Zhi; Yan, Han; Gan, Zhiyin; Fang, Haisheng

    2015-04-01

    Gallium nitride (GaN), a direct bandgap semiconductor widely used in bright light-emitting diodes (LEDs), is mostly grown by metal-organic chemical vapor deposition (MOCVD) method. A good reactor design is critical for the production of high-quality GaN thin films. In this paper, we presented a novel buffered distributed spray (BDS) MOCVD reactor with vertical gas sprayers and horizontal gas inlets. Experiments based on a 36×2″ BDS reactor were conducted to examine influence of the process parameters, such as the operating pressure and the gas flow rate, on the growth efficiency and on the layer thickness uniformity. Transmission electron microscopy (TEM) and photoluminescence (PL) are further conducted to evaluate quality of the epitaxial layers and to check performance of the reactor. Results show that the proposed novel reactor is of high performance in growing high-quality thin films, including InGaN/GaN multiquantum wells (MQWs) structures.

  9. Trapped Field Characteristics of Stacked YBCO Thin Plates for Compact NMR Magnets: Spatial Field Distribution and Temporal Stability.

    PubMed

    Hahn, Seungyong; Kim, Seok Beom; Ahn, Min Cheol; Voccio, John; Bascuñán, Juan; Iwasa, Yukikazu

    2010-06-01

    This paper presents experimental and analytical results of trapped field characteristics of a stack of square YBCO thin film plates for compact NMR magnets. Each YBCO plate, 40 mm × 40 mm × 0.08 mm, has a 25-mm diameter hole at its center. A total of 500 stacked plates were used to build a 40-mm long magnet. Its trapped field, in a bath of liquid nitrogen, was measured for spatial field distribution and temporal stability. Comparison of measured and analytical results is presented: the effects on trapped field characteristics of the unsaturated nickel substrate and the non-uniform current distribution in the YBCO plate are discussed.

  10. AlGaInN quaternary alloys by MOCVD

    SciTech Connect

    McIntosh, F.G.; Piner, E.; Boutros, K.; Roberts, J.C.; He, Y.; El-Masry, N.; Bedair, S.M.; Moussa, M.

    1996-11-01

    AlGaInN quaternary alloy based devices can cover the emission wavelength from deep UV to red. This quaternary alloy also offers lattice matched heterostructures for both optical and microwave devices. The authors report on the MOCVD growth of Al{sub x}Ga{sub 1{minus}x{minus}y}In{sub y}N (0 < x < 0.12), (0 < y < 0.15) at 750 C on sapphire substrates, using TMG, EDMIn, TMAl and NH{sub 3} precursors. Chemical composition, lattice constants and bandgaps of the grown films were determined by EDS, X-ray diffraction and room temperature PL. Data indicates that the lattice constants can also be deduced using Vegard`s law, indicating a solid solution of this alloy. PL showed band edge emission, however emission from deep levels was also observed. Optimized growth conditions and heterostructures using this quaternary alloy will be presented.

  11. MOCVD for solar cells, a transition towards a chamberless inline process

    NASA Astrophysics Data System (ADS)

    Barrioz, V.; Monir, S.; Kartopu, G.; Lamb, D. A.; Brooks, W.; Siderfin, P.; Jones, S.; Clayton, A. J.; Irvine, S. J. C.

    2015-03-01

    MOCVD has been associated with batch processing of III-V opto-electronic devices for decades, with epitaxial structures deposited on up to 200 mm diameter wafers. Recent development in thin film PV has seen the gap in conversion efficiencies closing in on that of the commonly found multicrystalline Si wafer based PV. To further improve the conversion efficiency of thin film PV towards the theoretical limits of single junction solar cells requires a technique such as MOCVD with scalability potential. Preliminary results on the development of a chamberless inline process are reported for up to 15 cm wide float glass, progressively coating each layer in the CdTe solar cell as the heated substrate passes under each coating head in turn and entirely at atmospheric pressure. Emphasis is made on ensuring that the chamberless coating heads can be operated safely using a combination of nitrogen curtain flows and a balanced exhaust pressure system. Results are also presented on the exclusion of oxygen and moisture from the coating area, achieved using the same gas flow isolation process. This paper also reviews the achievements made to-date in the transfer of the high efficiency batch MOCVD produced CdTe solar cell to the chamberless inline process demonstrating device quality thin films deposition.

  12. Role of twin boundaries on vortex pinning of CSD YBCO nanocomposites

    NASA Astrophysics Data System (ADS)

    Rouco, V.; Palau, A.; Guzman, R.; Gazquez, J.; Coll, M.; Obradors, X.; Puig, T.

    2014-12-01

    We study the effect of twin boundaries (TBs) on the critical current density of YBa2Cu3O7-x (YBCO) films and nanocomposites grown on different substrates. Varying both the direction of the current and magnetic field, we show that the TB orientation is a crucial parameter to consider in the optimization of Jc for particular applications. A quantitative and detailed analysis of the role of TBs on vortex dynamics has allowed us to infer that extended TB planes in pristine YBCO films can reduce Jc by 60% at low temperatures due to vortex channeling effects or increase it by a 98% at high temperatures due to directional vortex pinning. Moreover, we demonstrate that TB length and distribution can be strongly modified in YBCO nanocomposites. We observe that TB planes with no vertical coherence are still effective for vortex pinning while are not to create channels for easy vortex flow.

  13. R.F. Sputtering Deposition of Buffer Layers for Si/YBCO Integrated Microelectronics

    NASA Astrophysics Data System (ADS)

    Rombolà, G.; Ballarini, V.; Chiodoni, A.; Gozzelino, L.; Mezzetti, E.; Minetti, B.; Pirri, C. F.; Tresso, E.; Camerlingo, C.

    The aim of the present work is the optimization of the Si/buffer-layer/YBCO multilayer deposition process so as to grow superconducting films of quality suitable for device applications. The structural properties of the Si/CeO2 system, obtained by RF magnetron sputtering of CeO2 targets in Ar atmosphere, have been studied. More than 50 films have been deposited and some of them submitted to post-deposition annealing treatments both in N2 and O2 atmospheres. The presence of an unwanted amorphous SiO2 layer at the Si/CeO2 interface compromises the YBCO c-axis orientation, and therefore the sharpness of the R versus T transition. A newly designed deposition system has been realized: it has been specially conceived for obtaining bi- and tri-layers, adopting two targets in YSZ and CeO2, respectively. Results on YSZ/Si and CeO2/YSZ/Si systems obtained with the new machine are presented and discussed: (100) oriented YSZ films with nominal thickness of 40 nm have been obtained. The CeO2 film subsequently deposited has the desired (100) orientation. The YBCO film, in the final YBCO/YSZ/CeO2/Si configuration, is c-axis oriented.

  14. Interlayer structure in YBCO-coated conductors prepared by chemical solution deposition

    NASA Astrophysics Data System (ADS)

    Molina-Luna, Leopoldo; Egoavil, Ricardo; Turner, Stuart; Thersleff, Thomas; Verbeeck, Jo; Holzapfel, Bernhard; Eibl, Oliver; Van Tendeloo, Gustaaf

    2013-07-01

    The functionality of YBa2Cu3O7-δ (YBCO)-coated conductor technology depends on the reliability and microstructural properties of a given tape or wire architecture. Particularly, the interface to the metal tape is of interest since it determines the adhesion, mechanical stability of the film and thermal contact of the film to the substrate. A trifluoroacetate (TFA)—metal organic deposition (MOD) prepared YBCO film deposited on a chemical solution-derived buffer layer architecture based on CeO2/La2Zr2O7 and grown on a flexible Ni5 at.%W substrate with a {100}<001> biaxial texture was investigated. The YBCO film had a thickness was 440 nm and a jc of 1.02 MA cm-2 was determined at 77 K and zero external field. We present a sub-nanoscale analysis of a fully processed solution-derived YBCO-coated conductor by aberration-corrected scanning transmission electron microscopy (STEM) combined with electron energy-loss spectroscopy (EELS). For the first time, structural and chemical analysis of the valence has been carried out on the sub-nm scale. Intermixing of Ni, La, Ce, O and Ba takes place at these interfaces and gives rise to nanometer-sized interlayers which are a by-product of the sequential annealing process. Two distinct interfacial regions were analyzed in detail: (i) the YBCO/CeO2/La2Zr2O7 region (10 nm interlayer) and (ii) the La2Zr2O7/Ni-5 at.%W substrate interface region (20 nm NiO). This is of particular significance for the functionality of these YBCO-coated conductor architectures grown by chemical solution deposition.

  15. YBCO step-edge junctions with high IcRn

    NASA Astrophysics Data System (ADS)

    Mitchell, E. E.; Foley, C. P.

    2010-06-01

    Step-edge junctions represent one type of grain boundary Josephson junction employed in high-temperature superconducting junction technology. To date, the majority of results published in the literature focus on [001]-tilt grain boundary junctions (GBJs) produced using bicrystal substrates. We investigate the step morphology and YBCO (yttrium barium copper oxide) film structure of YBCO-based step-edge junctions on MgO [001] substrates which structurally resemble [100]-tilt junctions. High-resolution electron microscopy reveals a clean GBJ interface of width ~ 1 nm and a single junction at the top edge. The dependence of the transport properties on the MgO step-edge and junction morphology is examined at 4.2 K, to enable direct comparison with results for other junction studies such as [001]-tilt and [100]-tilt junctions and building on previously published 77 K data. MgO step-edge junctions show a slower reduction in critical current density with step angle compared with [001]-tilt junctions. For optimized step parameters, transport measurements revealed large critical current and normal resistance (IcRN) products (~3-5 mV), comparable with the best results obtained in other kinds of [100]-tilt GBJs in YBCO at 4.2 K. Junction-based devices such as SQUIDs (superconducting quantum interference devices) and THz imagers show excellent performance when MgO-based step-edge junctions are used.

  16. Observation of Transient Overcritical Currents in YBCO Thin Films using High-Speed Magneto-Optical Imaging and Dynamic Current Mapping.

    PubMed

    Wells, Frederick S; Pan, Alexey V; Golovchanskiy, Igor A; Fedoseev, Sergey A; Rozenfeld, Anatoly

    2017-01-09

    The dynamics of transient current distributions in superconducting YBa2Cu3O7-δ thin films were investigated during and immediately following an external field ramp, using high-speed (real-time) Magneto-Optical Imaging and calculation of dynamic current profiles. A number of qualitatively unique and previously unobserved features are seen in this novel analysis of the evolution of supercurrent during penetration. As magnetic field ramps up from zero, the dynamic current profile is characterized by strong peaks, the magnitude of which exceed the conventional critical current density (as determined from static current profiles). These peaks develop close to the sample edges, initially resembling screening currents but quickly growing in intensity as the external field increases. A discontinuity in field and current behaviour is newly observed, indicating a novel transition from increasing peak current toward relaxation behaviour. After this transition, the current peaks move toward the centre of the sample while reducing in intensity as magnetic vortices penetrate inward. This motion slows exponentially with time, with the current distribution in the long-time limit reducing to the expected Kim-model profile.

  17. Observation of Transient Overcritical Currents in YBCO Thin Films using High-Speed Magneto-Optical Imaging and Dynamic Current Mapping

    PubMed Central

    Wells, Frederick S.; Pan, Alexey V.; Golovchanskiy, Igor A.; Fedoseev, Sergey A.; Rozenfeld, Anatoly

    2017-01-01

    The dynamics of transient current distributions in superconducting YBa2Cu3O7−δ thin films were investigated during and immediately following an external field ramp, using high-speed (real-time) Magneto-Optical Imaging and calculation of dynamic current profiles. A number of qualitatively unique and previously unobserved features are seen in this novel analysis of the evolution of supercurrent during penetration. As magnetic field ramps up from zero, the dynamic current profile is characterized by strong peaks, the magnitude of which exceed the conventional critical current density (as determined from static current profiles). These peaks develop close to the sample edges, initially resembling screening currents but quickly growing in intensity as the external field increases. A discontinuity in field and current behaviour is newly observed, indicating a novel transition from increasing peak current toward relaxation behaviour. After this transition, the current peaks move toward the centre of the sample while reducing in intensity as magnetic vortices penetrate inward. This motion slows exponentially with time, with the current distribution in the long-time limit reducing to the expected Kim-model profile. PMID:28067331

  18. Observation of Transient Overcritical Currents in YBCO Thin Films using High-Speed Magneto-Optical Imaging and Dynamic Current Mapping

    NASA Astrophysics Data System (ADS)

    Wells, Frederick S.; Pan, Alexey V.; Golovchanskiy, Igor A.; Fedoseev, Sergey A.; Rozenfeld, Anatoly

    2017-01-01

    The dynamics of transient current distributions in superconducting YBa2Cu3O7‑δ thin films were investigated during and immediately following an external field ramp, using high-speed (real-time) Magneto-Optical Imaging and calculation of dynamic current profiles. A number of qualitatively unique and previously unobserved features are seen in this novel analysis of the evolution of supercurrent during penetration. As magnetic field ramps up from zero, the dynamic current profile is characterized by strong peaks, the magnitude of which exceed the conventional critical current density (as determined from static current profiles). These peaks develop close to the sample edges, initially resembling screening currents but quickly growing in intensity as the external field increases. A discontinuity in field and current behaviour is newly observed, indicating a novel transition from increasing peak current toward relaxation behaviour. After this transition, the current peaks move toward the centre of the sample while reducing in intensity as magnetic vortices penetrate inward. This motion slows exponentially with time, with the current distribution in the long-time limit reducing to the expected Kim-model profile.

  19. YBCO superconducting ring resonators at millimeter-wave frequencies

    NASA Technical Reports Server (NTRS)

    Chorey, Christopher M.; Kong, Keon-Shik; Bhasin, Kul B.; Warner, J. D.; Itoh, Tatsuo

    1991-01-01

    Microstrip ring resonators operating at 35 GHz were fabricated from laser ablated YBCO films deposited on lanthanum aluminate substrates. They were measured over a range of temperatures and their performances compared to identical resonators made of evaporated gold. Below 60 Kelvin the superconducting strip performed better than the gold, reaching an unloaded Q approximately 1.5 times that of gold at 25 K. A shift in the resonant frequency follows the form predicted by the London equations. The Phenomenological Loss Equivalence Method is applied to the ring resonator and the theoretically calculated Q values are compared to the experimental results.

  20. Inverse polarity of the resistive switching effect and strong inhomogeneity in nanoscale YBCO-metal contacts

    NASA Astrophysics Data System (ADS)

    Truchly, M.; Plecenik, T.; Zhitlukhina, E.; Belogolovskii, M.; Dvoranova, M.; Kus, P.; Plecenik, A.

    2016-11-01

    We have studied a bipolar resistive switching phenomenon in c-axis oriented normal-state YBa2Cu3O7-c (YBCO) thin films at room temperature by scanning spreading resistance microscopy (SSRM) and scanning tunneling microscopy (STM) techniques. The most striking experimental finding has been the opposite (in contrast to the previous room and low-temperature data for planar metal counter-electrode-YBCO bilayers) voltage-bias polarity of the switching effect in all SSRM and a number of STM measurements. We have assumed that the hysteretic phenomena in current-voltage characteristics of YBCO-based contacts can be explained by migration of oxygen-vacancy defects and, as a result, by the formation or dissolution of more or less conductive regions near the metal-YBCO interface. To support our interpretation of the macroscopic resistive switching phenomenon, a minimalist model that describes radical modifications of the oxygen-vacancy effective charge in terms of a charge-wind effect was proposed. It was shown theoretically that due to the momentum exchange between current carriers (holes in the YBCO compound) and activated oxygen ions, the direction in which oxygen vacancies are moving is defined by the balance between the direct electrostatic force on them and that caused by the current-carrier flow.

  1. The Effects of Grain Boundaries on the Current Transport Properties in YBCO-Coated Conductors.

    PubMed

    Yang, Chao; Xia, Yudong; Xue, Yan; Zhang, Fei; Tao, Bowan; Xiong, Jie

    2015-12-01

    We report a detailed study of the grain orientations and grain boundary (GB) networks in Y2O3 films grown on Ni-5 at.%W substrates. Electron back scatter diffraction (EBSD) exhibited different GB misorientation angle distributions, strongly decided by Y2O3 films with different textures. The subsequent yttria-stabilized zirconia (YSZ) barrier and CeO2 cap layer were deposited on Y2O3 layers by radio frequency sputtering, and YBa2Cu3O7-δ (YBCO) films were deposited by pulsed laser deposition. For explicating the effects of the grain boundaries on the current carry capacity of YBCO films, a percolation model was proposed to calculate the critical current density (J c) which depended on different GB misorientation angle distributions. The significantly higher J c for the sample with sharper texture is believed to be attributed to improved GB misorientation angle distributions.

  2. Passivation of Flexible YBCO Superconducting Current Lead With Amorphous SiO2 Layer

    NASA Technical Reports Server (NTRS)

    Johannes, Daniel; Webber, Robert

    2013-01-01

    across a thermal gradient with as little flow of heat as possible to make an efficient current lead. By protecting YBCO on a flexible substrate of low thermal conductivity with SiO2, a thermally efficient and flexible current lead can be fabricated. The technology is also applicable to current leads for 4 K superconducting electronics current biasing. A commercially available thin-film YBCO composite tape conductor is first stripped of its protective silver coating. It is then mounted on a jig that holds the sample flat and acts as a heat sink. Silicon dioxide is then deposited onto the YBCO to a thickness of about 1 micron using PECVD (plasma-enhanced chemical vapor deposition), without heating the YBCO to the point where degradation occurs. Since SiO2 can have good high-frequency electrical properties, it can be used to coat YBCO cable structures used to feed RF signals across temperature gradients. The prime embodiment concerns the conduction of DC current across the cryogenic temperature gradient. The coating is hard and electrically insulating, but flexible.

  3. Vacuum MOCVD fabrication of high efficience cells

    NASA Technical Reports Server (NTRS)

    Partain, L. D.; Fraas, L. M.; Mcleod, P. S.; Cape, J. A.

    1985-01-01

    Vacuum metal-organic-chemical-vapor-deposition (MOCVD) is a new fabrication process with improved safety and easier scalability due to its metal rather than glass construction and its uniform multiport gas injection system. It uses source materials more efficiently than other methods because the vacuum molecular flow conditions allow the high sticking coefficient reactants to reach the substrates as undeflected molecular beams and the hot chamber walls cause the low sticking coefficient reactants to bounce off the walls and interact with the substrates many times. This high source utilization reduces the materials costs power device and substantially decreases the amounts of toxic materials that must be handled as process effluents. The molecular beams allow precise growth control. With improved source purifications, vacuum MOCVD has provided p GaAs layers with 10-micron minority carrier diffusion lengths and GaAs and GaAsSb solar cells with 20% AMO efficiencies at 59X and 99X sunlight concentration ratios. Mechanical stacking has been identified as the quickest, most direct and logical path to stacked multiple-junction solar cells that perform better than the best single-junction devices. The mechanical stack is configured for immediate use in solar arrays and allows interconnections that improve the system end-of-life performance in space.

  4. Ordered YBCO sub-micron array structures induced by pulsed femtosecond laser irradiation.

    PubMed

    Luo, C W; Lee, C C; Li, C H; Shih, H C; Chen, Y-J; Hsieh, C C; Su, C H; Tzeng, W Y; Wu, K H; Juang, J Y; Uen, T M; Chen, S P; Lin, J-Y; Kobayashi, T

    2008-12-08

    We report on the formation of organized sub-micron YBa(2)Cu(3)O(7) (YBCO) dots induced by irradiating femtosecond laser pulses on YBCO films prepared by pulse laser deposition with fluence in the range of 0.21 approximately 0.53 J/cm(2). The morphology of the YBCO film surface depends strongly on the laser fluences irradiated. At lower laser fluence (approximately 0.21 J/cm(2)) the morphology was pattern of periodic ripples with sub-micrometer spacing. Slightly increasing the laser fluence to 0.26 J/cm(2) changes the pattern into organized sub-micron dots with diameters ranging from 100 nm to 800 nm and height of 150 nm. Further increase of the laser fluence to over 0.32 J/cm(2), however, appeared to result in massive melting and led to irregular morphology. The mechanism and the implications of the current findings will be discussed. Arrays of YBCO sub-micron dots with T(c) = 89.7 K were obtained.

  5. Safety-Enclosure System For MOCVD Process Chamber

    NASA Technical Reports Server (NTRS)

    Singletery, James, Jr.; Velasquez, Hugo; Warner, Joseph

    1995-01-01

    Safety-enclosure system filled with nitrogen surrounds reaction chamber in which metallo-organic chemical vapor deposition (MOCVD) performed. Designed to protect against explosions and/or escaping toxic gases and particulates. Gas-purification subsystem ensures during loading and unloading of process materials, interior of MOCVD chamber exposed to less than 1 ppm of oxygen and less than 5 ppm of water in nitrogen atmosphere. Toxic byproducts of MOCVD process collected within inert atmosphere. Enclosure strong enough to contain any fragments in unlikely event of explosion.

  6. Development of HTS power cable using YBCO coated conductor

    NASA Astrophysics Data System (ADS)

    Mukoyama, Shinichi; Yagi, Masashi; Hirano, Hironobu; Yamada, Yutaka; Izumi, Teruo; Shiohara, Yuh

    2006-10-01

    Reductions of AC losses and of cost of HTS power cables are important to put it into practical power networks. Since an YBCO-coated-conductor (YBCO tape) has higher Jc and better magnetic property than a Bi2223-Ag-sheathed-tape, an AC power cable using YBCO tapes will obtain higher performance than XLPE-cables and HTS cables using BSCCO tapes in future. Especially, an YBCO HTS cable will be expected to become a higher economical cable than a Bi cable because an YBCO tape reduced its AC losses and its wire cost. We have started developing HTS power cables using YBCO tapes. Mechanical properties, superconducting properties and other electro magnetic properties of YBCO tapes have been measured to estimate the applicability to the HTS cable. Moreover, we have developed some technologies to bring out latent potentials of YBCO tapes.

  7. Comparative Study between Similarly Processed YBa2Cu3O7-x Films with Y2BaCuO5 or BaSnO3 Additions (Postprint)

    DTIC Science & Technology

    2009-07-15

    14. ABSTRACT A special YBa2Cu3O7-x ( YBCO ) target with a thin sector of second phase material, in this case either Y2BaCuO5 (Y211) or BaSnO3 (BSO...was used to deposit YBCO films with non-layered nanoparticles on single crystal LaAlO3 and biaxially textured Ni-5 at.% W substrates buffered with...case of YBCO +Y211, and evenly spaced BSO nanocolumns in the case of YBCO +BSO, form in the YBCO films. While YBCO plane buckling was observed at many

  8. Critical Current Density and Microstructure Variations in YBa2Cu3O7-x + BaSnO3 Films with Different Concentrations of BaSnO3 (Postprint)

    DTIC Science & Technology

    2008-12-01

    degrade the YBCO performance. YBCO + BSO films were processed on ( 100 ) LaAlO3 substrates using premixed targets of YBa2Cu3O7-x ( YBCO ) with additions of... YBCO + 20 mol% BSO was better only at high fields. Transmission electron microscopy revealed the presence of 7–8- nm -diameter BSO nanocolumns, the...these concentrations degrade the YBCO performance. YBCO + BSO films were processed on ( 100 ) LaAlO3 substrates using premixed targets of YBa2Cu3O7-x

  9. Properties of YBCO on LaMnO3-capped IBAD MgO-templates without Homo-epitaxial MgO layer.

    SciTech Connect

    Aytug, Tolga; Paranthaman, Mariappan Parans; Kim, Kyunghoon; Zhang, Yifei; Cantoni, Claudia; Zuev, Yuri L; Goyal, Amit; Thompson, James R; Christen, David K

    2009-01-01

    Previously, it has been well established that in an IBAD architecture for coated conductors, (1) LaMnO3 (LMO) buffer layers are structurally and chemically compatible with an underlying homo-epitaxial MgO layer and (2) high current density YBCO films can be grown on these LMO templates. In the present work, the homo-epi MgO layer has been successfully eliminated and a LMO cap layer was grown directly on the IBAD (MgO) template. The performance of the LMO/IBAD (MgO) samples has been qualified by depositing 1 m-thick YBCO coatings by pulsed laser deposition. Electrical transport measurements of YBCO films on the standard (with homo-epi MgO) and simplified (without homo-epi MgO) IBAD architectures were carried out. The angular dependencies of critical current density (Jc) are similar for both IBAD architectures. XRD measurements indicate good, c-axis aligned YBCO films. Transmission electron microscopy (TEM) images reveal that microstructures of YBCO/LMO/IBAD (MgO) and YBCO/LMO/homo-epi MgO/IBAD (MgO) templates are similar. These results demonstrate the strong potential of using LMO as a single cap layer directly on IBAD (MgO) for the development of a simplified IBAD architecture.

  10. A YBCO RF-SQUID magnetometer and its applications

    NASA Technical Reports Server (NTRS)

    Luwei, Zhou; Jingwu, Qiu; Xienfeng, Zhang; Zhiming, Tank; Yongjia, Qian

    1990-01-01

    An applicable RF-superconducting quantum interference detector (SQUID) magnetometer was made using a bulk sintered yttrium barium copper oxide (YBCO). The temperature range of the magnetometer is 77 to 300 K and the field range 0 to 0.1T. At 77 K, the equivalent flux noise of the SQUID is 5 x 10 to minus 4 power theta sub o/square root of Hz at the frequency range of 20 to 200 Hz. The experiments show that the SQUID noise at low-frequency end is mainly from 1/f noise. A coil test shows that the magnetic moment sensitivity delta m is 10 to the minus 6th power emu. The RF-SQUID is shielded in a YBCO cylinder with a shielding ability B sub in/B sub ex of about 10 to the minus 6th power when external dc magnetic field is about a few Oe. The magnetometer is successfully used in characterizing superconducting thin films.

  11. The influence of strain on the dielectric behavior of (Ba, Sr) Ti{sub 1+x}O{sub 3} thin films grown by LS-MOCVD on Pt/SiO{sub 2}/Si.

    SciTech Connect

    Streiffer, S. K.

    1998-10-14

    The strain state and its coupling to dielectric behavior have been investigated for (100) BST thin films deposited on Pt/SiO{sub 2}/Si at 640 C. It is estimated from x-ray diffraction that the in-plane biaxial strain is approximately 0.7%. We postulate that this is of sufficient magnitude to confine any spontaneous polarization to the plane of the film. The thickness-corrected dielectric behavior perpendicular to the substrate for these samples shows evidence of coupling to such an in-plane phase transition at approximately 390K, as manifested by deviation from Curie-Weiss-like behavior at this temperature.

  12. Second Phase (BaGeO3, BaSiO3) Nanocolumns in Yba2Cu3O7-x Films (Postprint)

    DTIC Science & Technology

    2010-01-01

    compositions were used to deposit YBCO +BGeO and YBCO +BSiO films on ( 100 ) single crystal LaAlO3 substrates. The cross- sectional transmission electron...micrographs showed the presence of 20 nm diameter nanocolumns in the YBCO films of both the compositions. However, the critical transition...were used to deposit YBCO +BGeO and YBCO +BSiO films on ( 100 ) single crystal LaAlO3 substrates. The cross-sectional transmission electron micrographs

  13. Theoretical analysis of a YBCO squirrel-cage type induction motor based on an equivalent circuit

    NASA Astrophysics Data System (ADS)

    Morita, G.; Nakamura, T.; Muta, I.

    2006-06-01

    A HTS induction motor, with a HTS squirrel-cage rotor, is analysed using an electrical equivalent circuit. The squirrel-cage winding in the rotor consists of rotor bars and end rings, and both are considered to be made of YBCO film conductors. A wide range of electric field versus current density in YBCO film is formulated based on the Weibull function, and analysed as a non-linear resistance in the equivalent circuit. It is shown that starting and accelerating torques of the HTS induction motor are improved drastically compared to those of a conventional induction motor. Furthermore, large synchronous torque can also be realized by trapping the magnetic flux in the rotor circuit because of the persistent current mode.

  14. Improved noise performance of ultrathin YBCO Dayem bridge nanoSQUIDs

    NASA Astrophysics Data System (ADS)

    Arpaia, R.; Arzeo, M.; Baghdadi, R.; Trabaldo, E.; Lombardi, F.; Bauch, T.

    2017-01-01

    We have fabricated YBa2Cu3O{}7-δ (YBCO) nano superconducting quantum interference devices (nanoSQUIDs), realized in Dayem bridge configuration, on films with thickness down to 10 nm. The devices, which have not been protected by a Au capping layer during the nanopatterning, show modulations of the critical current as a function of the externally applied magnetic field from 300 mK up to the critical temperature of the nanobridges. The absence of the Au shunting layer and the enhancement of the sheet resistance in ultrathin films lead to very large voltage modulations and transfer functions, which make these nanoSQUIDs highly sensitive devices. Indeed, by using bare YBCO nanostructures, we have revealed an upper limit for the intrinsic white flux noise level {S}{{Φ },{{w}}}1/2\\lt 450 {{n}}{{{Φ }}}0 {{Hz}}-1/2.

  15. Development of Solution Buffer Layers for RABiTS Based YBCO Coated Conductors

    SciTech Connect

    Paranthaman, Mariappan Parans; Qiu, Xiaofeng; List III, Frederick Alyious; Zhang, Yifei; Li, Xiaoping; Sathyamurthy, Srivatsan; Thieme, C. L. H.; Rupich, M. W.

    2011-01-01

    Abstract The main objective of this research is to find a suitable alternate solution based seed layer for the standard RABiTS three-layer architecture of physical vapor deposited CeO cap/YSZ barrier/Y O seed on Ni-5%W metal tape. In the present work, we have identified CeO buffer layer as a potential replacement for Y O seeds. Using a metal-organic deposition (MOD) process, we have grown smooth, crack-free, epitaxial thin films of CeO (pure and Zr, Cu and Gd-doped) directly on biaxially textured Ni-5W substrates in short lengths. Detailed XRD studies indicate that a single epitaxial CeO phase with slightly improved out-of-plane texture compared to the texture of the underlying Ni-W substrates can be achieved in pure, undoped CeO samples. We have also demonstrated the growth of YSZ barrier layers on pure CeO seeds using sputtering. Both sputtered CeO cap layers and MOD-YBCO films were grown epitaxially on these YSZ-buffered MOD-CeO /Ni-5W substrates. High critical currents per unit width, of 264 A/cm (critical current density, of 3.3 MA/cm ) at 77 K and 0.01 T was achieved for 0.8 m thick MOD-YBCO films grown on MOD-CeO seeds. These results indicate that CeO films can be grown directly on Ni-5W substrates and still support high performance YBCO coated conductors. This work holds promise for a route for producing low-cost buffer architecture for RABiTS based YBCO coated conductors.

  16. In-Situ Deposition of YBCO/CeO2 on Biaxially Textured Ni Alloy Tapes by Thermal Coevaporation

    NASA Astrophysics Data System (ADS)

    Bindi, M.; Gianni, L.; Zannella, S.; Botarelli, A.; Baldini, A.; Gauzzi, A.; Tuissi, A.

    We report on the in-situ preparation and characterization of coated conductors consisting of a ~ 400 nm thick YBCO superconducting film grown by thermal co-evaporation on a ~ 200 nm thick CeO2 buffer layer grown by e-beam evaporation on biaxially textured Ni-Cr and Ni-V substrates. We studied the degree of texture of both YBCO and CeO2 layers as a function of substrate temperature during deposition and of oxygen partial pressure. X-ray diffraction patterns reveal that the highest degree of (100) texture of the buffer layer, necessary for the subsequent growth of the YBCO film with the desired c-axis orientation, is achieved at substrate temperatures of the order of 670-730°C. The backfilling of the chamber with oxygen during the cooling-down of the substrates after deposition of the CeO2 layer greatly improves the degree of crystallization of the buffer layer. YBCO films show good superconducting properties with critical temperatures Tc of the order of 87 K. Work is in progress to scale up the process for long tapes.

  17. Fast epitaxial growth of a-axis- and c-axis-oriented YBa 2Cu 3O 7- δ films on (1 0 0) LaAlO 3 substrate by laser chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhao, Pei; Ito, Akihiko; Tu, Rong; Goto, Takashi

    2011-02-01

    a-axis- and c-axis-oriented YBa2Cu3O7-δ (YBCO) films were epitaxially grown on (1 0 0) LaAlO3 substrates by laser chemical vapor deposition. The preferred orientation in the YBCO film changed from the a-axis to the c-axis with increasing laser powers from 77 to 158 W (the deposition temperatures from 951 to 1087 K). The a-axis-oriented YBCO film showed in-plane epitaxial growth of YBCO [0 0 1]//LAO [0 0 1], and the c-axis-oriented YBCO film showed that of YBCO [0 1 0]//LAO [0 0 1]. A c-axis-oriented YBCO film with a high critical temperature of 90 K was prepared at a deposition rate of 90 μm h-1, about 2-1000 times higher than that of metalorganic chemical vapor deposition.

  18. YBa2Cu3O7 thin films on nanocrystalline diamond films for HTSC bolometer

    NASA Technical Reports Server (NTRS)

    Cui, G.; Beetz, C. P., Jr.; Boerstler, R.; Steinbeck, J.

    1993-01-01

    Superconducting YBa2Cu3O(7-x) films on nanocrystalline diamond thin films have been fabricated. A composite buffer layer system consisting of diamond/Si3N4/YSZ/YBCO was explored for this purpose. The as-deposited YBCO films were superconducting with Tc of about 84 K and a relatively narrow transition width of about 8 K. SEM cross sections of the films showed very sharp interfaces between diamond/Si3N4 and between Si3N4/YSZ. The deposited YBCO film had a surface roughness of about 1000 A, which is suitable for high-temperature superconductive (HTSC) bolometer fabrication. It was also found that preannealing of the nanocrystalline diamond thin films at high temperature was very important for obtaining high-quality YBCO films.

  19. Radiative efficiency of MOCVD grown QD lasers

    NASA Astrophysics Data System (ADS)

    Mawst, Luke; Tsvid, Gene; Dudley, Peter; Kirch, Jeremy; Park, J. H.; Kim, N.

    2010-02-01

    The optical spectral gain characteristics and overall radiative efficiency of MOCVD grown InGaAs quantum dot lasers have been evaluated. Single-pass, multi-segmented amplified spontaneous emission measurements are used to obtain the gain, absorption, and spontaneous emission spectra in real units. Integration of the calibrated spontaneous emission spectra then allows for determining the overall radiative efficiency, which gives important insights into the role which nonradiative recombination plays in the active region under study. We use single pass, multi-segmented edge-emitting in which electrically isolated segments allow to vary the length of a pumped region. In this study we used 8 section devices (the size of a segment is 50x300 μm) with only the first 5 segments used for varying the pump length. The remaining unpumped segments and scribed back facet minimize round trip feedback. Measured gain spectra for different pump currents allow for extraction of the peak gain vs. current density, which is fitted to a logarithmic dependence and directly compared to conventional cavity length analysis, (CLA). The extracted spontaneous emission spectrum is calibrated and integrated over all frequencies and modes to obtain total spontaneous radiation current density and radiative efficiency, ηr. We find ηr values of approximately 17% at RT for 5 stack QD active regions. By contrast, high performance InGaAs QW lasers exhibit ηr ~50% at RT.

  20. Anomalous diffusion of Ga and As from semi-insulating GaAs substrate into MOCVD grown ZnO films as a function of annealing temperature and its effect on charge compensation

    SciTech Connect

    Biswas, Pranab; Banerji, P.; Halder, Nripendra N.; Kundu, Souvik; Shripathi, T.; Gupta, M.

    2014-05-15

    The diffusion behavior of arsenic (As) and gallium (Ga) atoms from semi-insulating GaAs (SI-GaAs) into ZnO films upon post-growth annealing vis-à-vis the resulting charge compensation was investigated with the help of x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy. The films, annealed at 600 ºC and 700 ºC showed p-type conductivity with a hole concentration of 1.1 × 10{sup 18} cm{sup −3} and 2.8 × 10{sup 19} cm{sup −3} respectively, whereas those annealed at 800 ºC showed n-type conductivity with a carrier concentration of 6.5 × 10{sup 16} cm{sup −3}. It is observed that at lower temperatures, large fraction of As atoms diffused from the SI-GaAs substrates into ZnO and formed acceptor related complex, (As{sub Zn}–2V{sub Zn}), by substituting Zn atoms (As{sub Zn}) and thereby creating two zinc vacancies (V{sub Zn}). Thus as-grown ZnO which was supposed to be n-type due to nonstoichiometric nature showed p-type behavior. On further increasing the annealing temperature to 800 ºC, Ga atoms diffused more than As atoms and substitute Zn atoms thereby forming shallow donor complex, Ga{sub Zn}. Electrons from donor levels then compensate the p-type carriers and the material reverts back to n-type. Thus the conversion of carrier type took place due to charge compensation between the donors and acceptors in ZnO and this compensation is the possible origin of anomalous conduction in wide band gap materials.

  1. Introduction of Artificial Pinning Center into PLD-YBCO Coated Conductor on IBAD and Self-Epitaxial CeO2 Buffered Metal Substrate

    SciTech Connect

    Kobayashi, H.; Yamada, Y.; Ishida, S.; Takahashi, K.; Konishi, M.; Ibi, A.; Miyata, S.; Kato, T.; Hirayama, T.; Shiohara, Y.

    2006-03-31

    In order to fabricate YBa2Cu3O7-x (YBCO) coated conductors with high critical current density Jc in magnetic fields, we fabricated YBCO coated conductors with artificial pinning centers by the pulsed laser deposition (PLD) method on a self epitaxial PLD-CeO2 layer and ion-beam assisted deposition (IBAD)-Gd2Zr2O7 (GZO) buffered Hastelloy tape. Artificial pinning centers were introduced by the PLD deposition using the yttria-stabilized zirconia (YSZ) oxide target (nano-dot method) and YBCO target including YSZ particles (mixed target method). In the experiments using YSZ oxide target, YSZ nano-dots were observed. They were approximately 15 nm in height and 10 nm to 70 nm in diameter. We found that the density of nano-dots was controlled by the number of laser pulses. These samples exhibited higher Jc than YBCO films in magnetic fields. Furthermore, a similar improvement of Jc was observed in the experiments using YBCO target including YSZ particles. TEM observation revealed that columnar nano-structure made of BaZrO3 was formed during YBCO deposition and it was effective for pinning. We call this new epitaxial nano-structure 'bamboo structure' from its anisotropic growth and morphology.

  2. Transport AC Losses in Striated YBCO Coated Conductors (Postprint)

    DTIC Science & Technology

    2012-02-01

    AFRL-RZ-WP-TP-2012-0124 TRANSPORT AC LOSSES IN STRIATED YBCO COATED CONDUCTORS (POSTPRINT) G.A. Levin and P.N. Barnes Mechanical Energy...TRANSPORT AC LOSSES IN STRIATED YBCO COATED CONDUCTORS (POSTPRINT) 5a. CONTRACT NUMBER In-house 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...2006. 14. ABSTRACT DC current-voltage characteristics and transport ac losses of striated and non-striated Y1Ba2Cu3O7-δ ( YBCO ) coated conductors

  3. Improving YBCO Coated Conductors for Applications (Postprint)

    DTIC Science & Technology

    2012-02-01

    are lighter in weight and smaller in size than their conventional counterparts. The YBCO coated conductor is expected to be the premiere HTS conductor...superconductors (HTS) can enable megawatt-class power systems which are lighter in weight and smaller in size than their conventional counterparts. The...Pinning, Superconducting Machines . PACS: 74.60.G, 74.76.B, 74.25.H, 74.72.B INTRODUCTION A variety of future military systems will require large amounts

  4. YBCO Coated Conductors with Reduced AC Losses

    DTIC Science & Technology

    2008-01-30

    application such as turbo- generators and gyrotron magnets . The major reason is the enhanced in-field performance at 50-65 K and the proven...transformers, current limiters and the stators of rotating equipment. Low AC-loss in 2G HTS requires wire components with low magnetism , and an YBCO...layer with low transport and low hysteretic losses in an alternating magnetic field. The latter loss type requires a suitable filamentization technique

  5. YBCO High-Temperature Superconducting Filters on M-Plane Sapphire Substrates

    NASA Technical Reports Server (NTRS)

    Sabataitis, J. C.; Mueller, C. H.; Miranda, F. A.; Warner, J.; Bhasin, K. B.

    1996-01-01

    Since the discovery of High Temperature Superconductors (HTS) in 1986, microwave circuits have been demonstrated using HTS films on various substrates. These HTS-based circuits have proven to operate with less power loss than their metallic film counterparts at 77 K. This translates into smaller and lighter microwave circuits for space communication systems such as multiplexer filter banks. High quality HTS films have conventionally been deposited on lanthanum aluminate (LaAlO3) substrates. However, LaAlO3 has a relative dielectric constant (epsilon(sub r)) of 24. With a epsilon(sub r) approx. 9.4-11.6, sapphire (Al2O3) would be a preferable substrate for the fabrication of HTS-based components since the lower dielectric constant would permit wider microstrip lines to be used in filter design, since the lower dielectric constant would permit wider microstrip lines to be used for a given characteristic impedance (Z(sub 0)), thus lowering the insertion losses and increasing the power handling capabilities of the devices. We report on the fabrication and characterization of YBa2Cu3O(7-delta) (YBCO) on M-plane sapphire bandpass filters at 4.0 GHz. For a YBCO 'hairpin' filter, a minimum insertion loss of 0.5 dB was measured at 77 K as compared with 1.4 dB for its gold counterpart. In an 'edge-coupled' configuration, the insertion loss went down from 0.9 dB for the gold film to 0.8 dB for the YBCO film at the same temperature.

  6. Reduced Nonlinearity Superconducting Thin Films to Transmit and Receive Application

    DTIC Science & Technology

    2010-11-13

    topic AF06-T0I4. At UES. we have used the modified TFA MOD approach to grow high quality YBCO films with high critical current density up to 5.0MA/cm...34 at 77K self- field. Intermodulation distortion (IMD) of these films has been measured at MIT Lincoln Laboratory. Possible degradation of YBCO films...the data of thermal cycling test, it is found that selected protective layers are very effective in maintaining the properties of YBCO films. 15

  7. Controlled Introduction of Flux Pinning Centers in YBa2Cu3O7-x Films during Pulsed-Laser Deposition (Postprint)

    DTIC Science & Technology

    2012-02-01

    YBCO films and are of good quality. Figure 2 shows a high resolution SEM photomicrograph of a film, which shows the presence of 10–20 nm sized spherical... 100 –200 nm size pores were observed throughout the microstructure. The presence of the pores is likely due to the particular growth parameters of...into YBCO films using an YBCO PLD target with a second phase sector of Y211. Microstructure shows that YBCO films grown on LaAlO3 substrates had nm

  8. Second Phase (BaGeO3, BaSiO3) Nanocolumns in YBa2Cu3O7-x Films

    NASA Astrophysics Data System (ADS)

    Varanasi, C. V.; Reichart, J.; Burke, J.; Wang, H.; Susner, M.; Sumption, M.; Barnes, P. N.

    2010-04-01

    YBa2Cu3O7-x (YBCO) films with BaGeO3 (BGeO), BaSiO3 (BSiO) second phase additions were processed by pulsed laser deposition. Sectored targets with BGO or BSiO wedges as well as pre-mixed targets of YBCO, BGeO or BSiO with appropriate compositions were used to deposit YBCO+BGeO and YBCO+BSiO films on (100) single crystal LaAlO3 substrates. The cross-sectional transmission electron micrographs showed the presence of 20 nm diameter nanocolumns in the YBCO films of both the compositions. However, the critical transition temperature (Tc) of the films was found to significantly decrease. As a result, the critical current density (Jc) in applied magnetic fields was suppressed. The YBCO+BGeO and YBCO+BSiO films made with lower concentrations of additions showed slight improvement in Tc indicating that the substitution of Ge and Si in the lattice is possibly responsible for the Tc depression. This study shows that in addition to the ability to form nanocolumns, the chemical compatibility of BaSnO3 (BSO) and BaZrO3 (BZO) as observed in YBCO+BSO and YBCO+BZO is critical to process high Jc YBCO films.

  9. Fabrication of high T(sub c) superconductor thin film devices: Center director's discretionary fund

    NASA Technical Reports Server (NTRS)

    Sisk, R. C.

    1992-01-01

    This report describes a technique for fabricating superconducting weak link devices with micron-sized geometries etched in laser ablated Y1Ba2Cu3O(x) (YBCO) thin films. Careful placement of the weak link over naturally occurring grain boundaries exhibited in some YBCO thin films produces Superconducting Quantum Interference Devices (SQUID's) operating at 77 K.

  10. The fabrication of YBa2Cu3O7-x film by metal organic deposition using terpineol-modified trifluoroacetates

    NASA Astrophysics Data System (ADS)

    Ding, Fazhu; Gu, Hongwei; Li, Tao

    2008-09-01

    Dense and homogeneous superconductive YBa2Cu3O7-x (YBCO) thin films were grown epitaxially on single-crystal LaAlO3 (LAO) substrates by a new MOD method with terpineol-modified trifluoroacetic solution. The YBCO precursor solution incorporated with terpineol enabled a remarkable decrease in the organic pyrolysis process. The YBCO films have an onset critical temperature of 90 K and Jc (77 K, 0 T) of 3.8 MA cm-2. The addition of terpineol was suggested to be responsible for the smoother and low-stressed YBCO films.

  11. Dynamic Field and Current Distributions in Multifilamentary YBa2Cu3O7-delta Thin Films with Magnetic Coupling (POSTPRINT)

    DTIC Science & Technology

    2010-03-01

    SUBJECT TERMS superconductivity, critical current density, magnetic field, YBa2Cu3O7-z or YBCO , time-resolved magneto-optical imaging, multifilament...field distributions in YBa2Cu3O7− YBCO thin films. We present finite-element model FEM simulations that allow a direct comparison of the...both a test of the model itself as well as new informa- tion on the complex behavior of YBCO thin films observed previously.7 We find for filamentary

  12. MOCVD Synthesis of Thallium Superconductor Materials

    DTIC Science & Technology

    1990-07-31

    Diagram of thallium annealing furnace assembly. 9 Thallium Incorporation Methods Precursor Film -Pellet of BaO + CaO + CuO + M103 (Stoichiometric...GOVERNMENT ACTION REQUIRED Support work on phase diagram of Tl-Ba-Ca-Cu-O system especially with regards to effects of over-pressure of TI and 0 during...order to form the superconducting phase . The chemical, physical, and superconducting properties of the resultant films were characterized. The quality

  13. Transport phenomena and the effects of reactor geometry for epitaxial GaN growth in a vertical MOCVD reactor

    NASA Astrophysics Data System (ADS)

    Tseng, Chien-Fu; Tsai, Tsung-Yen; Huang, Yen-Hsiu; Lee, Ming-Tsang; Horng, Ray-Hua

    2015-12-01

    In this study a numerical simulation was carried out to analyze the transport phenomena in a vertical type metal organic chemical vapor deposition (MOCVD) reactor for Gallium Nitride (GaN) growth. The simulated results were compared and validated by experiment. The effects of showerhead design and chamber height are investigated and discussed. It was found that, by properly adjusting the height of the chamber, both the growth rate and film uniformity could be significantly improved. This is attributed to the suppression of the thermal and mass transfer boundary layers by the injection flow of reacting gas mixtures, as well as the confined vertical vortices caused by the geometry of the reduced space. However, inappropriate design of the distance between the showerhead and the susceptor can result in uneven distribution of the organic source in the vicinity of the substrate surface resulting in an uneven growth rate of the GaN film. Consequently, there exists an optimal chamber height that will give the best growth rate and uniformity to the GaN film as discussed in this study. This study provides comprehensive insight into the transport phenomena of GaN growth that includes coupled heat and mass transfer as well as chemical reactions. The results provide important information in a succinct format and enable decisions to be made about the showerhead and the geometrical design and size of a vertical MOCVD reactor.

  14. Superconducting Electronic Film Structures

    DTIC Science & Technology

    1991-02-14

    superconductors, yttrium , barium, copper, oxides, high, critical, temperature, thin films, tunneling, barriers, thallium, sputtering. 19. ABSTRACT (Continue on...50*C lower than that required for YBCO. In common with YBCO, the best films grew epitaxially with a c-axis orientation on SrTiO3 , LaAIO 3, and NdGaO 3...for c-axis growth were (001) faces of LaAIO 3, NdGaO 3 , SrTiO3 , MgO. yttria-stabilized ZrO2 (YSZ), 11 and (1102) sapphire. Low substrate

  15. Maximum permissible voltage of YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Wen, J.; Lin, B.; Sheng, J.; Xu, J.; Jin, Z.; Hong, Z.; Wang, D.; Zhou, H.; Shen, X.; Shen, C.

    2014-06-01

    Superconducting fault current limiter (SFCL) could reduce short circuit currents in electrical power system. One of the most important thing in developing SFCL is to find out the maximum permissible voltage of each limiting element. The maximum permissible voltage is defined as the maximum voltage per unit length at which the YBCO coated conductors (CC) do not suffer from critical current (Ic) degradation or burnout. In this research, the time of quenching process is changed and voltage is raised until the Ic degradation or burnout happens. YBCO coated conductors test in the experiment are from American superconductor (AMSC) and Shanghai Jiao Tong University (SJTU). Along with the quenching duration increasing, the maximum permissible voltage of CC decreases. When quenching duration is 100 ms, the maximum permissible of SJTU CC, 12 mm AMSC CC and 4 mm AMSC CC are 0.72 V/cm, 0.52 V/cm and 1.2 V/cm respectively. Based on the results of samples, the whole length of CCs used in the design of a SFCL can be determined.

  16. The preparation of ZnS:Mn electroluminescent layers by MOCVD using new manganese sources

    NASA Astrophysics Data System (ADS)

    Migita, M.; Kanehisa, O.; Shiiki, M.; Yamamoto, H.

    1988-12-01

    In the preparation of ZnS:Mn polycrystalline films by MOCVD, CPM [(C 5H 5) 2Mn: di-π-cyclopentadienyl manganese] and BCPM [(CH 3C 5H 4) 2Mn: bismethylcyclopentadienyl manganese] are employed as new doping sources, and are compared with previously reported TCM [(CH 3C 5H 4)Mn(CO) 3: tricarbonyl methylcyclopentadienyl manganese]. In contrast to TCM, which is only partially decomposed even at 400 ˜ 500°C, CPM and BCPM are completely decomposed around the optimum growth temperature of ZnS, i.e. 280-350°C. When thermally decomposed, TCM produces a by-product containing Mn and carbonyl, which does not contribute to the luminescence, but CPM and BCPM do not. By these advantages, the double-insulator type electroluminescent (EL) devices prepared with CPM or BCPM show higher luminance than those prepared with TCM. A 500 nm thick ZnS:Mn layer by CPM gives the maximum efficiency ( ηmax) of 4.8 lm/W and a saturated luminance ( Lsat) of 4300 cd/m 2 at 1 kHz sine wave excitation. By BCPM, Lsat of 3150 cd/m 2 was obtained. Meanwhile, the devices prepared with TCM in this investigation show Lsat to be less than 1000 cd/m 2 and a low efficiency of less than 1 lm/W. By the combination with red filters, ZnS:Mn by MOCVD with CPM or BCPM can also provide efficient red EL. When a glass filter (the cut-off wavelength is 590 nm) is used, the EL device prepared with CPM gives Lsat=1420 cd/m 2 and ηmax=1.6 lm/W (the color coordinates, x=0.626 and y=0.373) at 1 kHz sine wave excitation.

  17. Remarkable weakness against cleavage stress for YBCO-coated conductors and its effect on the YBCO coil performance

    NASA Astrophysics Data System (ADS)

    Yanagisawa, Y.; Nakagome, H.; Takematsu, T.; Takao, T.; Sato, N.; Takahashi, M.; Maeda, H.

    2011-08-01

    Cleavage strength for an YBCO-coated conductor at 77 K was investigated with a model experiment. The nominal cleavage strength for an YBCO-coated conductor is extremely low, typically 0.5 MPa. This low nominal cleavage strength is due to stress concentration on a small part of the YBCO-coated conductor in cleavage fracture. Debonding by the cleavage stress occurs at the interface between the buffer layer and the Hastelloy substrate. The nominal cleavage strength for a slit edge of the conductor is 2.5-times lower than that for the original edge of the conductor; cracks and micro-peel existing over the slit edge reduce the cleavage strength for the slit edge. Cleavage stress and peel stress should be avoided in coil winding, as they easily delaminate the YBCO-coated conductor, resulting in substantial degradation of coil performance. These problems are especially important for epoxy impregnated YBCO-coated conductor coils. It appears that effect of cleavage stress and peel stress are mostly negligible for paraffin impregnated YBCO-coated conductor coils or dry wound YBCO-coated conductor coils.

  18. Factors that influence particle formation during pulsed electron deposition of YBCO precursors

    NASA Astrophysics Data System (ADS)

    Mathis, John E.; Christen, Hans M.

    2007-08-01

    Pulsed electron deposition (PED) is an attractive alternative to pulsed laser deposition (PLD) for growing thin films because of PED’s relatively low cost. A potential problem with PED, however, is the generation of particulates that interfere with film growth. The influence of ambient pressure and accelerating potential on the number of and size of particulates appearing on the surface of films was investigated for the barium fluoride-based YBCO precursor process. It was found that the size of the particulates varies exponentially with accelerating voltage. The size of the particulates can be reduced to less than 100 nm by increasing the ambient pressure beyond that required for optimum deposition rate. The ability to control the size of particulates could make PED useful for technical applications where the generation of sub-micron sized materials is desired.

  19. Scanning hall probe microscopy of AC losses in YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Dinner, Rafael; Daniels, George; Larbalestier, David; Gibbons, Brady; Matias, Vladimir; Moler, Kathryn; Beasley, Malcolm

    2005-03-01

    Magnetic imaging of current-induced vortex movement in superconducting films yields detailed information about dissipation and the path of an applied current. In our large-area scanning hall probe microscope, a flow cryostat cools a sample while a micro-Hall probe is rastered near its surface using a 3-axis stepper-motor-based stage with submicron resolution and centimeter scan range. Hall probe time traces taken at each point are assembled into movies of the flux penetration as a function of time over a cycle of AC sample current. YBCO films grown on several substrates are examined, including bicrystal substrates that induce a single grain boundary across the current path and metal tapes that give rise to a grain boundary network. An extended Bean model allows us to extract pinning forces and critical currents of the intragrain film and its grain boundaries.

  20. Processing of YBCO superconductors for improved levitation force

    SciTech Connect

    Balachandran, U.; Zhong, W.

    1993-05-01

    One objective of the ANL superconductor program is to develop improved processing methods for production of YBCO superconductors with higher levitation forces suitable for low-friction, superconductor/permanent-magnet bearings and flywheel-energy-storage applications. From the standpoint of these applications, melt-processed bulk YBCO superconductors are of considerable interest. Levitation force and flux-pinning properties depend on microstructural features of the superconductors. We have added several chemical species to YBCO to alter the microstructure and have used a seeding technique to induce crystallization during melt processing. In this paper, we discuss the effects of various process parameters, additives, and a seeding technique on the properties of melt-processed bulk YBCO samples and compare the results with solid-state-sintered superconductors.

  1. Exfoliated YBCO filaments for second-generation superconducting cable

    NASA Astrophysics Data System (ADS)

    Solovyov, Vyacheslav; Farrell, Paul

    2017-01-01

    The second-generation high temperature superconductor (2G HTS) wire is the most promising conductor for high-field magnets such as accelerator dipoles and compact fusion devices. The key element of the wire is a thin Y1Ba2Cu3O7 (YBCO) layer deposited on a flexible metal substrate. The substrate, which becomes incorporated in the 2G conductor, reduces the electrical and mechanical performance of the wire. This is a process that exfoliates the YBCO layer from the substrate while retaining the critical current density of the superconductor. Ten-centimeter long coupons of exfoliated YBCO layers were manufactured, and detailed structural, electrical, and mechanical characterization were reported. After exfoliation, the YBCO layer was supported by a 75 μm thick stainless steel foil, which makes for a compact, mechanically stronger, and inexpensive conductor. The critical current density of the filaments was measured at both 77 K and 4.2 K. The exfoliated YBCO retained 90% of the original critical current. Similarly, tests in an external magnetic field at 4.2 K confirmed that the pinning strength of the YBCO layer was also retained following exfoliation.

  2. AFM nano-plough planar YBCO micro-bridges: critical currents and magnetic field effects.

    PubMed

    Elkaseh, A A O; Perold, W J; Srinivasu, V V

    2010-10-01

    The critical current (Ic) of YBa2Cu3O7-x (YBCO) AFM plough micro-constrictions is measured as a function of temperature, width and the magnetic flux density (B), which was applied perpendicular to the YBCO ab-plane and surface of the bridges. C-axis oriented thin films of YBa2Cu3O7-x were deposited on MgO substrates using an inverted cylindrical magnetron (ICM) sputtering technique. The films were then patterned into 8-10 micron size strips, using standard photolithography and dry etching processes. Micro-bridges with widths between 1.9 microm to 4.1 microm were fabricated by using atomic force microscope (AFM) nanolithography techniques. Critical current versus temperature data shows a straight-line behavior, which is typical of constriction type Josephson junctions. The Ic versus B characteristics exhibited a modulation, and a suppression of the critical current of up to 84%. It was also found that the critical current increases with increasing constriction width.

  3. Buffer layers for high-Tc thin films on sapphire

    NASA Technical Reports Server (NTRS)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  4. The use of metalorganics in the preparation of semiconductor materials. VIII - Feasibility studies of the growth of Group III-Group V compounds of boron by MOCVD

    NASA Technical Reports Server (NTRS)

    Manasevit, H. M.; Hewitt, W. B.; Nelson, A. J.; Mason, A. R.

    1989-01-01

    The MOCVD growth of B-As and B-P films on Si, sapphire, and Si-on-sapphire substrates is described; in this process, trimethylborane (TMB) or triethylborane (TEB) is pyrolyzed in the presence of AsH3 or PH3 in an H2 atmosphere. The procedures employed are outlined, and the results are presented in graphs, tables, and micrographs. It is found that the growth rate of the primarily amorphous films is dependent on the TMB or TEB concentration but approximately constant for TEB and AsH3 at 550-900 C. The nominal compositions of films grown using TMB are given as B(12-16)As2 and B(1-1.3)P. Carbon impurities and significant stress, bowing, and crazing are observed in the films grown on Si substrates, with the highest carbon content in the films grown from TMB and PH3.

  5. Temperature variations in electrical and photoluminescence properties of ZnSe grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Giapis, Konstantinos P.; Lu, Da-Chen; Jensen, Klavs F.; Potts, John E.

    1990-07-01

    The effect of growth temperature on the optoelectronic properties of epitaxial ZnSe grown by metalorganic chemical vapor deposition (MOCVD) on GaAs (100) from dimethyl zinc and hydrogen selenide has been investigated in a vertical reactor. Chlorine was found to be the main donor impurity originating from Se, used to produce the hydrogen selenide. The deposited films were single crystalline for growth temperatures above 225°C and were characterized by low-temperature photoluminescence. With increasing growth temperature, the donor-bound excitonic emission decreased in intensity and linewidth, while the 77 K electron mobility increased. The trend continued until the free exciton became the dominant near-band-edge emission at a growth temperature of 350°C, at which point the films turned out to be highly resistive and Hall measurements could not be performed. High electron mobilities of 8000-9000 cm 2/V·s at 77 K were measured for growth temperatures of 325°C. The transition tto high resistivity was found to be accompanied by a sharp increase in the photoluminescence intensity of the Y0 emission, related to extended defects. Thermally activated dislocations and changes in the charge state of the Y0-related defect are proposed as possible mechanisms for these experimental observations.

  6. Gas phase depletion and flow dynamics in horizontal MOCVD reactors

    NASA Astrophysics Data System (ADS)

    Van de Ven, J.; Rutten, G. M. J.; Raaijmakers, M. J.; Giling, L. J.

    1986-08-01

    Growth rates of GaAs in the MOCVD process have been studied as a function of both lateral and axial position in horizontal reactor cells with rectangular cross-sections. A model to describe growth rates in laminar flow systems on the basis of concentration profiles under diffusion controlled conditions has been developed. The derivation of the growth rate equations includes the definition of an entrance length for the concentration profile to developed. In this region, growth rates appear to decrease with the 1/3 power of the axial position. Beyond this region, an exponential decrease is found. For low Rayleigh number conditions, the present experimental results show a very satisfactory agreement with the model without parameter fitting for both rectangular and tapered cells, and with both H 2 and N 2 as carrier gases. Theory also predicts that uniform deposition can be obtained over large areas in the flow direction for tapered cells, which has indeed been achieved experimentally. The influence of top-cooling in the present MOCVD system has been considered in more detail. From the experimental results, conclusions could be drawn concerning the flow characteristics. For low Rayleigh numbers (present study ≲ 700) it follows that growth rate distributions correspond with forced laminar flow characteristics. For relatively high Rayleigh numbers (present work 1700-2800), free convective effects with vortex formation are important. These conclusions are not specific for the present system, but apply to horizontal cold-wall reactors in general. On the basis of the present observations, recommendations for a cell design to obtain large area homogeneous deposition have been formulated. In addition, this work supports the conclusion that the final decomposition of trimethylgallium in the MOCVD process mainly takes place at the hot substrate and susceptor and not in the gas phase.

  7. Electrical properties of ferroelectric-gate FETs with SrBi2Ta2O9 formed using MOCVD technique

    NASA Astrophysics Data System (ADS)

    Yan, Kang; Takahashi, Mitsue; Sakai, Shigeki

    2012-09-01

    Ferroelectric-gate field-effect transistors (FeFETs) with a Pt/SrBi2Ta2O9/Hf-Al-O/Si gate stack were fabricated using the metal-organic chemical vapor deposition (MOCVD) technique to prepare the SrBi2Ta2O9 (SBT) ferroelectric layer. A good threshold voltage ( V th) distribution was found for more than 90 n-channel FeFETs in one chip with a 170 nm SBT layer owing to the good film uniformity of the SBT layer deposited by MOCVD. The average memory window (Vw^{av}) and the standard deviations ( σ thl, σ thr) of the left- and right-side branches of the drain-gate voltage curves of the FeFETs yielded a Vw^{av}/(σ_{thl} + σ_{thr}) value of 5.45, indicating that the FeFETs can be adapted for large-scale-integration. The electric field, the energy band profile in the gate stack, and the gate leakage current were also investigated at high gate voltages. We found that the effect of Fowler-Nordheim tunneling appeared under these conditions. Because of the tunneling injection and trapping of electrons into the gate insulators, the operation voltage ranges of the FeFETs were limited by this tunneling.

  8. Semiconductor Laser Diode Arrays by MOCVD (Metalorganic Chemical Vapor Deposition)

    DTIC Science & Technology

    1987-09-01

    Roberts. N. J1. Mason. and M. Robinson, J. Cryst. Growth 68, 422 (1984). ’M. R. Leys. C. van Opdorp. M. P. A. .’iegers, and H. J. Talen -van der Mheen...geometry effects is and superlattices has been dominated obtained by including one measured by the MOCVD growth technology . data point in the analysis...Dapkus, Gallium : Arsenide Technology , D.K. Ferry, Ed., tices i Howard W. Sams and Co., Indianapolis, hetero- 1985, p. 79. s is nec- G . 4. G. Costrini and

  9. Coupling Losses and Transverse Resistivity of Multifilament YBCO Coated Superconductors (Postprint)

    DTIC Science & Technology

    2012-02-01

    AFRL-RZ-WP-TP-2012-0125 COUPLING LOSSES AND TRANSVERSE RESISTIVITY OF MULTIFILAMENT YBCO COATED SUPERCONDUCTORS (POSTPRINT) M. Polak, E... YBCO COATED SUPERCONDUCTORS (POSTPRINT) 5a. CONTRACT NUMBER In-house 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 62203F 6. AUTHOR(S) M...filamentary YBCO coated conductors. A 10 mm wide YBCO coated conductor was subdivided into 20 filaments by laser ablation. We measured the frequency

  10. Suppression of Mg propagation into subsequent layers grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Agarwal, Anchal; Tahhan, Maher; Mates, Tom; Keller, Stacia; Mishra, Umesh

    2017-01-01

    Low temperature (LT) flow modulation epitaxy (FME) or "pulsed" growth was successfully used to prevent magnesium from Metalorganic Chemical Vapor Deposition (MOCVD) grown p-GaN:Mg layers riding into subsequently deposited n-type layers. Mg concentration in the subsequent layers was lowered from ˜1 × 1018 cm-3 for a medium temperature growth at 950 °C to ˜1 × 1016 cm-3 for a low temperature growth at 700 °C via FME. The slope of the Mg concentration drop in the 700 °C FME sample was 20 nm/dec—the lowest ever demonstrated by MOCVD. For growth on Mg implanted GaN layers, the drop for a medium temperature regrowth at 950 °C was ˜10 nm/dec compared to >120 nm/dec for a high temperature regrowth at 1150 °C. This drop-rate obtained at 950 °C or lower was maintained even when the growth temperature in the following layers was raised to 1150 °C. A controlled silicon doping series using LT FME was also demonstrated with the lowest and highest achieved doping levels being 5 × 1016 cm-3 and 6 × 1019 cm-3, respectively.

  11. MOCVD growth of vertically aligned InGaN nanowires

    NASA Astrophysics Data System (ADS)

    Kuo, H. C.; Su Oh, Tae; Ku, P.-C.

    2013-05-01

    In this work, we report the growth of vertically aligned bulk InGaN nanowires (NWs) on r-plane sapphire substrate by metal organic chemical vapor deposition (MOCVD). Through the optimization process of growth conditions, such as growth temperature and pressure, we obtained high density InGaN NWs consisting of one (0001) polar- and two equivalent {1101} semi-polar planes. We have shown the highest InGaN NWs wire density of 8×108 cm-2,with an average diameter of 300 nm and a length of 2 μm. From results of photoluminescence (PL) at 30 K and 300 K, we observed the intense and broad emission peak from InGaN NWs at around 595 nm, and confirmed that the luminescence could be tuned from 580 nm to 660 nm by controlling the indium flow (TMIn) rate. Our results indicate that MOCVD-grown InGaN NWs can be effective absorbers of the blue-green range of solar spectrum and may be one of the good candidates for high efficiency photovoltaic devices targeting at blue-green photons.

  12. Enhanced 77 K vortex-pinning in Y Ba2Cu3O7-x films with Ba2Y TaO6 and mixed Ba2Y TaO6 + Ba2Y NbO6 nano-columnar inclusions with irreversibility field to 11 T

    NASA Astrophysics Data System (ADS)

    Rizzo, F.; Augieri, A.; Angrisani Armenio, A.; Galluzzi, V.; Mancini, A.; Pinto, V.; Rufoloni, A.; Vannozzi, A.; Bianchetti, M.; Kursumovic, A.; MacManus-Driscoll, J. L.; Meledin, A.; Van Tendeloo, G.; Celentano, G.

    2016-06-01

    Pulsed laser deposited thin Y Ba2Cu3O7-x (YBCO) films with pinning additions of 5 at. % Ba2Y TaO6 (BYTO) were compared to films with 2.5 at. % Ba2Y TaO6 + 2.5 at. % Ba2Y NbO6 (BYNTO) additions. Excellent magnetic flux-pinning at 77 K was obtained with remarkably high irreversibility fields greater than 10 T (YBCO-BYTO) and 11 T (YBCO-BYNTO), representing the highest ever achieved values in YBCO films.

  13. YBCO microwave grain boundary mixer using a SrTiO[sub 3] bicrystal substrate

    SciTech Connect

    Seed, R.G.; Dorsey, P.C.; How, H.; Widom, A.; Vittoria, C. )

    1993-11-01

    A microwave mixer was patterned on a microstrip transmission line of superconducting YBCO (YBa[sub 2]Cu[sub 3]O[sub 7[minus]x]). The YBCO film was epitaxially laser deposited on a SrTiO[sub 3] bicrystal substrate. A weak link was constructed by patterning a microbridge In the microstrip at the bicrystal boundary. Two microwave signals were applied at the input of the microstrip line, one signal at 9.000 GM and the other signal at 9.941 GHz. An output intermediate frequency signal was observed at 941 MHz and was detected as the transmitted signal. The microbridge junction, which behaved as a resistively shunted Josephson junction (RSJ), was current biased slightly above the critical current I[sub c]. The mixer conversion loss was measured at the input and output ports of the device package. With these measurements, the mixing efficiency was determined at the device junction, and this measured efficiency was compared with the calculated efficiency. The calculated efficiency was determined by numerical solution of the Josephson equation for the weak link junction.

  14. YBCO hot-electron bolometers dedicated to THz detection and imaging: Embedding issues

    NASA Astrophysics Data System (ADS)

    Aurino, M.; Kreisler, A. J.; Türer, I.; Martinez, A.; Gensbittel, A.; Dégardin, A. F.

    2010-06-01

    High-Tc hot-electron bolometers (HEB) are an interesting alternative to other superconducting heterodyne mixers in the terahertz frequency range because of low-cost cooling investment, ultra-wide instantaneous bandwidth and low intrinsic noise level, even at 80 K. A technological process to fabricate stacked yttrium-based (YBCO) / praseodymium-based (PBCO) ultra-thin films (in the 15 to 40 nm thickness range) etched to form 0.5 μm × 0.5 μm constrictions, elaborated on (100) MgO substrates, has been previously described. Ageing effects were also considered, with the consequence of increased electrical resistance, significant degradation of the regular THz response and no HEB mixing action. Electron and UV lithography steps are revisited here to realize HEB mixers based on nano-bridges covered by a log-periodic planar gold antenna, dedicated to the 1 to 7 THz range. Several measures have been attempted to reduce the conversion losses, mainly by considering the embedding issues related to the YBCO nano-bridge impedance matching to the antenna and the design of optimized intermediate frequency circuitry. Antenna simulations were performed and validated through experiments on scaled models at GHz frequencies. Electromagnetic coupling to the incoming radiation was also studied, including crosstalk between neighbour antennas forming a linear imaging array.

  15. Microstructure dependence of the c-axis critical current density in second generation YBCO tapes

    SciTech Connect

    Jia, Y. Welp, U. Crabtree, G.W.; Kwok, W.K.; Malozemoff, A.P.; Rupich, M.W.; Fleshler, S.; Clem, J.R.

    2011-10-31

    C-axis current flow in high temperature superconductor (HTS) tape-shaped wires arises in configurations where the local wire axis is not perpendicular to the local magnetic field, such as in power cables with helically wound HTS tapes. The c-axis critical current density J{sub c}{sup c} has been recently found to be orders of magnitude lower than the ab-plane critical current density J{sub c}{sup ab}. Here we report on J{sub c}{sup c} (77 K, sf) values of various YBa{sub 2}Cu{sub 3}O{sub 7}-based (YBCO) tapes with different microstructures. Our results show that the value of J{sub c}{sup c} (77 K, sf) decreases significantly with increasing concentration of ab-plane stacking faults in YBCO thin films and that the critical current anisotropy {gamma} = J{sub c}{sup ab}/J{sub c}{sup c} can reach values as high as 2070, implying that in the highest-anisotropy tape, {approx}20% of the tape width carries c-axis current in a helically wound power cable.

  16. Microstructure dependence of the c-axis critical current density in second-generation YBCO tapes.

    SciTech Connect

    Jia, Y.; Welp, U.; Crabtree, G. W.; Kwok, W. K.; Malozemoff, A. P.; Rupich, M. W.; Fleshler, S.; Clem, J. R.

    2011-10-01

    C-axis current flow in high temperature superconductor (HTS) tape-shaped wires arises in configurations where the local wire axis is not perpendicular to the local magnetic field, such as in power cables with helically wound HTS tapes. The c-axis critical current density J{sub c}{sup c} has been recently found to be orders of magnitude lower than the ab-plane critical current density J{sub c}{sup ab}. Here we report on J{sub c}{sup c} (77 K, sf) values of various YBa{sub 2}Cu{sub 3}O{sub 7}-based (YBCO) tapes with different microstructures. Our results show that the value of J{sub c}{sup c} (77 K, sf) decreases significantly with increasing concentration of ab-plane stacking faults in YBCO thin films and that the critical current anisotropy {gamma} = J{sub c}{sup ab}/J{sub c}{sup c} can reach values as high as 2070, implying that in the highest-anisotropy tape, {approx}20% of the tape width carries c-axis current in a helically wound power cable.

  17. Dramatic effects of chlorine addition on expanding synthesis conditions for fluorine-free metal-organic decomposition YBa2Cu3O y films

    NASA Astrophysics Data System (ADS)

    Motoki, Takanori; Ikeda, Shuhei; Honda, Genki; Nagaishi, Tatsuoki; Nakamura, Shin-ichi; Shimoyama, Jun-ichi

    2017-02-01

    The synthesis conditions of fluorine-free metal-organic decomposition (FF-MOD)-processed YBa2Cu3O y (YBCO) films on buffered metallic substrates have been systematically investigated. Chlorine addition to the starting solution was found to be quite effective for expanding the synthesis conditions of highly c-axis-oriented YBCO films. YBCO films showing a high critical current, ˜100 A/cm (77 K, ˜0 T), were successfully obtained by sintering at 740 °C, which is ˜50 °C lower than the typical sintering temperature for FF-MOD-processed YBCO films. This strongly indicated that chlorine addition is promising for the development of long and homogeneous YBCO tapes even by sintering at a low temperature of ˜740 °C.

  18. Investigation of YBa2Cu3O7-δ growth mode effect on the dielectric properties of BaxSr1-xTiO3 for BaxSr1-xTiO3/YBa2Cu3O7-δ bilayered thin films epitaxially grown on vicinal LaAlO3 substrates

    NASA Astrophysics Data System (ADS)

    Zhu, X. H.; Peng, W.; Tian, H. F.; Yong, L. P.; Li, J.; Li, J. Q.; Zheng, D. N.

    2006-10-01

    Epitaxial bilayered thin films of BaxSr1-xTiO3 (BSTO, x = 0.1 and 0.5)/YBa2Cu3O7-δ (YBCO), with different YBCO film thicknesses, have been grown in situ by pulsed-laser deposition on 1.2° vicinal LaAlO3 substrates. The critical thickness for the transformation of the growth mode in YBCO between two-dimensional (2D) step flow and three-dimensional island is experimentally confirmed to be around 180 nm. As the YBCO-film thickness increases from 145 to 250 nm, the tremendous degradation of the film quality, due to the growth-mode change in YBCO, leads to drastic deterioration in the dielectric properties of BSTO thin films, with severe decrease in the figure of merit factor from 148 to 10 in Ba0.1Sr0.9TiO3/YBCO (at 77 K and 100 kHz) and from 56 to 6 in Ba0.5Sr0.5TiO3/YBCO (at 300 K and 100 kHz). As a result, the dielectric properties of BSTO thin films could be significantly enhanced by strictly tailoring the growth mode in YBCO as a 2D step flow for this kind of BSTO/YBCO bilayers.

  19. In situ pre-growth calibration using reflectance as a control strategy for MOCVD fabrication of device structures

    SciTech Connect

    Breiland, W.G.; Hou, H.Q.; Chui, H.C.; Hammons, B.E.

    1996-08-01

    In situ normal incidence reflectance, combined with a virtual interface model, is being used routinely on a commercial MOCVD reactor to measure growth rates of compound semiconductor films. The technique serves as a pre-growth calibration tool analogous to the use of RHEED in MBE as well as a real-time monitor throughout the run. An application of the method to the growth of a vertical cavity surface emitting laser (VCSEL) device structure is presented. All necessary calibration information can be obtained using a single run lasting less than one hour. Working VCSEL devices are obtained on the first try after calibration. Repeated runs have yielded {+-} 0.3% reproducibility of the Fabry-Perot cavity wavelength over the course of more than 100 runs.

  20. Microstructure Characteristics of High Lift Factor MOCVD REBCO Coated Conductors With High Zr Content

    SciTech Connect

    Galstyan, E; Gharahcheshmeh, MH; Delgado, L; Xu, AX; Majkic, G; Selvamanickam, V

    2015-06-01

    We report the microstructural characteristics of high levels of Zr-added REBa2Cu3O7-x (RE = Gd, Y rare earth) coated conductors fabricated by Metal Organic Chemical Vapor Deposition (MOCVD). The enhancements of the lift factor defined as a ratio of the in-field (3 T, B parallel to c-axis) critical current density (J(c)) at 30 K and self-field J(c) at 77 K have been achieved for Zr addition levels of 20 and 25 mol% via optimization of deposition parameters. The presence of strong flux pinning is attributed to the aligned nanocolumns of BaZrO3 and nanoprecipitates embedded in REBa2Cu3O7-x matrix with good crystal quality. A high density of BZO nanorods with a typical size 6-8 nm and spacing of 20 nm has been observed. Moreover, the high Zr content was found to induce a high density of intrinsic defects, including stacking faults and dislocations. The correlation between in-field performance along the c-axis and microstructure of (Gd, Y) BCO film with a high level of Zr addition is discussed.

  1. Growth of GaAs in a rotating disk MOCVD reactor

    NASA Astrophysics Data System (ADS)

    Thompson, A. G.; Sundaram, V. S.; Girard, G. R.; Fraas, L. M.

    1989-04-01

    We report the growth of GaAs homoepitaxial films from trimethylgallium and arsine in a multi-wafer rotating disk reactor. In this configuration the substrates are mounted on a disk that is spun at high speed (> 1000 rpm) in a sub-atmospheric (<100 Torr) environment. The spinning disk pumps the reactant and carrier gases radially outwards; under optimum conditions, convective recirculating cells are avoided, thus facilitating rapid transitions in doping and composition in the grown layers. In this paper we look at the morphology, growth rate and electrical properties of the GaAs epitaxial layers as a function of substrate temperature, V/III ratio, dopant type, spin speed and hydrogen carrier flow conditions. These results are compared with those obtained in conventional MOCVD reactors. Silicon and tellurium doping over a wide range of carrier concentrations has been achieved with excellent mobilities and uniformity across the wafers. Preliminary results on MESFET's fabricated from n +/n/buffer structures show good device characteristics.

  2. Removal of degradation of the performance of an epoxy impregnated YBCO-coated conductor double pancake coil by using a polyimide-electrodeposited YBCO-coated conductor

    NASA Astrophysics Data System (ADS)

    Yanagisawa, Y.; Sato, K.; Piao, R.; Nakagome, H.; Takematsu, T.; Takao, T.; Kamibayashi, H.; Takahashi, M.; Maeda, H.

    2012-06-01

    Degradation of the epoxy impregnated YBCO coil performance is due to tensile radial stress concentration on the outer edge of the conductor during cool down. This stress acts as a cleavage stress and opens the conductor edge, fracturing the YBCO layer. The fracture propagates to another edge of the conductor, resulting in degradation of the coil performance. Degradation of the epoxy impregnated YBCO coil is eliminated, if we use a polyimide-electrodeposited YBCO-coated conductor: tensile radial stress concentration on the outer edge of the conductor is reduced due to plastic deformation of the ductile polyimide. Polyimide electrodeposition onto the YBCO-coated conductor is reliable, uniform, easy to apply, and can be extended to larger YBCO magnets, removing the risk of coil degradation.

  3. Synthesis of nanoscale superconducting YBCO by a novel technique

    NASA Astrophysics Data System (ADS)

    Xu, X. L.; Guo, J. D.; Wang, Y. Z.; Sozzi, A.

    2002-06-01

    A novel technique using citrate pyrolysis was developed to prepare nanoscale superconducting oxide materials. This paper describes the details on synthesizing nanocrystalline YBCO with a Tc of ∼80 K using this method. The morphology and structure of the nanoscale products were characterized by powder X-ray diffraction and scanning electron microscopy. The obtained YBCO grains have a mean particle size of 40-60 nm (for unannealed samples) and 100-150 nm (for the annealed products). The crystalline size was only ∼20 nm. Currently there are attempts at using such fine powder to fabricate longer superconducting tapes, which should induce a technical revolution in the production of superconducting tapes.

  4. Tuning Porosity of YBa2Cu3O7-delta Vicinal Films by Insertion of Y2BaCuO5 Nanoparticles (Postprint)

    DTIC Science & Technology

    2012-02-01

    microstructure on Jc. By growing YBa2Cu3O7−δ YBCO films at a small vicinal angle, we have recently obtained a highly porous structure in these films...accompanied with a significantly enhanced Jc. This result raises a challenging question on whether the porosity can be tailored in YBCO films to allow a...higher Jc. In this study, we have explored the insertion of Y2BaCuO5 (211) nanoparticles in vicinal YBCO thick films to alter the strain at the

  5. MOCVD growth of AlGaN UV LEDs

    SciTech Connect

    Han, J.; Crawford, M.H.

    1998-09-01

    Issues related to the MOCVD growth of AlGaN, specifically the gas-phase parasitic reactions among TMG, TMA, and NH{sub 3}, are studied using an in-situ optical reflectometer. It is observed that the presence of the well-known gas phase adduct (TMA: NH{sub 3}) could seriously hinder the incorporation behavior of TMGa. Relatively low reactor pressures (30--50 Torr) are employed to grow an AlGaN/GaN SCH QW p-n diode structure. The UV emission at 360 nm (FWHM {approximately} 10 nm) represents the first report of LED operation from an indium-free GaN QW diode.

  6. MOCVD manifold switching effects on growth and characterization

    NASA Technical Reports Server (NTRS)

    Clark, Ivan O.; Fripp, Archibald L.; Jesser, William A.

    1991-01-01

    A combined modeling and experimental approach is used to quantify the effects of various manifold components on the switching speed in metalorganic chemical vapor deposition (MOCVD). In particular, two alternative vent-run high-speed switching manifold designs suitable for either continuous or interrupted growth have been investigated. Both designs are incorporated in a common manifold, instrumented with a mass spectrometer. The experiments have been performed using nitrogen as the transport gas and argon as the simulated source gas. The advantages and limitations of two designs are discussed. It is found that while constant flow manifold switching systems may have fluid dynamic advantages, care must be taken to minimize sections of the supply manifold with low flow rates if rapid changes in alloy composition are required.

  7. Comparison of CSD-YBCO growth on different single crystal substrates

    NASA Astrophysics Data System (ADS)

    Kunert, J.; Bäcker, M.; Falter, M.; Schroeder-Obst, D.

    2008-02-01

    2G HTS Coated Conductors properties can be improved by comparing different raw materials, precursor production routes and coating and annealing conditions. To suppress the influence of varying substrate tapes and buffer layer qualities on the HTS layers, a standard substrate is needed to improve the Jc values. In this work various pure single crystal substrates (SrTiO3 [STO], (LaAlO3)0.3(Sr2AlTaO6)0.7 [LSAT], LaAlO3 [LAO], NdGaO3 [NdGaO]) are investigated to find the material which is best in terms of price, texture and morphological layout and instantaneous availability. YBCO films deposited onto these substrates via chemical solution deposition (CSD) are analysed using XRD texture analysis, surface morphology analysis (high resolution AFM) and inductive measurement of the critical current density.

  8. [Raman spectra of YBCO superconductor with hot ultrapressing treatment].

    PubMed

    Yang, Hai-feng; Wei, Le-han; Cao, Xiao-wei

    2002-02-01

    Laser Raman spectra of YBCO oxide superconductor with hot ultrapressing and annealing treatment are reported. In addition to improving physical properties, the spectra data show that the processing can also perfect orthorhombie phase and enhance lattice on orientation trend as well as is good for formation of two dimension CuO2 net. The relation between structure and the superconductivity has been discussed.

  9. The magnetoresistance of YBCO/BZO composite superconductors

    NASA Astrophysics Data System (ADS)

    Malik, Bilal A.; Asokan, K.; Ganesan, V.; Singh, Durgesh; Malik, Manzoor A.

    2016-12-01

    We study the effect of addition of BaZrO3 (BZO) on normal and superconducting state of YBa2Cu3O7-δ (YBCO). We find that in general both room temperature and residual resistivity increase with the addition of BZO except at low concentration of BZO. The temperature dependence of resistivity in presence of magnetic field also shows less resistivity broadening in composites containing low concentration of BZO below transition temperature (TC). The zero temperature upper critical field (Hc2(0)), estimated by using Werthamer, Helfand and Hohenberg theory and Ginzburg Landau theory, shows an increase by the finite addition of BZO in YBCO. Further, the activation energy (U0) determined from Arrhenius plots and vortex glass transition temperature (Tg) also increase with the limited addition of BZO. Such an enhancement in Hc2(0), Uo and Tg has been attributed to the increase in grain connectivity of YBCO . We conclude that the limited addition of BZO in YBCO significantly improves its superconducting performance in magnetic environment.

  10. High Tc YBCO superconductor deposited on biaxially textured Ni substrate

    DOEpatents

    Budai, John D.; Christen, David K.; Goyal, Amit; He, Qing; Kroeger, Donald M.; Lee, Dominic F.; List, III, Frederick A.; Norton, David P.; Paranthaman, Mariappan; Sales, Brian C.; Specht, Eliot D.

    1999-01-01

    A superconducting article includes a biaxially-textured Ni substrate, and epitaxial buffer layers of Pd (optional), CeO.sub.2 and YSZ, and a top layer of in-plane aligned, c-axis oriented YBCO having a critical current density (J.sub.c) in the range of at least 100,000 A/cm.sup.2 at 77 K.

  11. Fabrication of interface-modified ramp-edge junction on YBCO ground plane with multilayer structure

    NASA Astrophysics Data System (ADS)

    Wakana, H.; Adachi, S.; Kamitani, A.; Sugiyama, H.; Sugano, T.; Horibe, M.; Ishimaru, Y.; Tarutani, Y.; Tanabe, K.

    2003-10-01

    We examined the fabrication conditions to obtain high-quality ramp-edge Josephson junctions on a liquid-phase-epitaxy YBa 2Cu 3O y (LPE-YBCO) ground plane, in particular, focusing on the fabrication of a suitable insulating layer on the ground plane and the post-annealing conditions to load oxygen to the ground plane. A (LaAlO 3) 0.3-(SrAl 0.5Ta 0.5O 3) 0.7 (LSAT) insulating film on the ground planes exhibited a conductance ranging from 10 -4 to 10 -8 S after deposition of an upper superconducting film, suggesting existence of some leak paths through the LSAT insulating layer. By introducing approximately 30 nm thick SrTiO 3 (STO) buffer layers on both side of the LSAT insulating layer. We reproducibly obtained a conductance lower than 10 -8 S. The dielectric constant of the STO/LSAT/STO layer was 32, which was slightly larger than that of the single LSAT layer. It was found that a very slow cooling rate of 1.0 °C/h in oxygen was needed to fully oxidize the ground plane through the STO/LSAT/STO insulating layers, while the oxidation time could be effectively reduced by introducing via holes in the insulating layer at an interval of 200 μm. Ramp-edge junctions on LPE-YBCO ground planes with STO/LSAT/STO insulating layers exhibited a 1 σ-spread in Ic of 8% for 100-junction series-arrays and a sheet inductance of 0.7 pH/□ at 4.2 K.

  12. Finite-Element Simulations of Field and Current Distributions in Multifilamentary Superconducting Films (Postprint)

    DTIC Science & Technology

    2010-03-01

    coupling and ac losses. 15. SUBJECT TERMS superconductivity, flux pinning, critical current density, magnetic field, YBa2Cu3O7‒z or YBCO , finite...the ends. The dimensions chosen for the system correspond to YBa2Cu3O7−x ( YBCO ) thin films grown by pulsed laser deposition on a LaAlO3 or SrTiO3...1000 Hz. For the superconducting material, we choose Jc = 3 × 1011 A m−2, Ec = 10−4 V m−1 and n = 25 Figure 1. Example of filamentary YBCO thin film

  13. Effects of process parameters on sheet resistance uniformity of fluorine-doped tin oxide thin films.

    PubMed

    Hudaya, Chairul; Park, Ji Hun; Lee, Joong Kee

    2012-01-05

    An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process parameters, in this case, working and bubbler pressures of ECR-MOCVD, can lead to a change in resistance uniformity. Both the optical transmittance and electrical resistance uniformity of FTO film-coated PET were investigated. The result shows that sheet resistance uniformity and the transmittance of the film are affected significantly by the changes in bubbler pressure but are less influenced by the working pressure of the ECR-MOCVD system.

  14. Ionic liquid gating of ultra-thin YBa2Cu3O7-x films

    NASA Astrophysics Data System (ADS)

    Fête, A.; Rossi, L.; Augieri, A.; Senatore, C.

    2016-11-01

    In this paper, we present a detailed investigation of the self-field transport properties of an ionic liquid gated ultra-thin YBa2Cu3O7-x (YBCO) film. From the high temperature dynamic of the resistivity (>220 K), different scenarios pertaining to the interaction between the liquid and the thin film are proposed. From the low temperature evolution of Jc and Tc, a comparison between the behavior of our system and the standard properties of YBCO is drawn.

  15. Effective microwave surface resistance of gold-contacted YBa2Cu3O7-x thin films

    NASA Astrophysics Data System (ADS)

    Zaitsev, A. G.; Schneider, R.; Geerk, J.; Linker, G.; Ratzel, F.; Smithey, R.

    1999-12-01

    The microwave surface resistance (Rs) of YBa2Cu3O7-x (YBCO) films sputtered simultaneously on both sides of CeO2 coated sapphire wafers of 3 in. diameter was measured using the disk resonator technique at a frequency of 1.92 GHz. By deposition of Au layers of various thicknesses on the unpatterned YBCO side of the disk resonator, we studied the effective Rs of the Au-contacted YBCO films. Although the Au layer was not directly exposed to the microwave power, it dramatically increased the effective Rs of the YBCO film. For example, Rs(77 K)=16.5 μΩ of a 300-nm-thick YBCO film increased to 85 μΩ by the deposition of a 0.1-μm-thick Au layer. The increase of the Au thickness to 1.2 μm resulted in a further enhancement of the effective Rs up to 560 μΩ. We explain this effect in terms of the impedance transformation model. According to this model the effective Rs of the Au/YBCO bilayer decreases with increasing YBCO film thickness. However, Au layers with thicknesses above 1 μm considerably enhance the effective Rs even for thick YBCO films (700-800 nm). A higher quality of the YBCO films (in terms of shorter London penetration depths) reduces the effect of a Au layer, while a low electrical resistivity of this layer leads to a further increase of the effective Rs.

  16. Silver doping: A potential means to grow high quality YBa{sub 2}Cu{sub 3}O{sub 7-x} thin films on bare sapphire

    SciTech Connect

    Kumar, D.; Satyalakshmi, K.M.; Manoharan, S.S.

    1995-10-01

    High quality Ag-doped YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) thin films have been grown by laser ablation on < {bar 1}012 > bare sapphire. This work demonstrates that Ag-doping can be used as very convenient means to realize good quality YBCO films on highly coveted sapphire substrates for microwave applications of high T{sub c} thin films.

  17. Fluctuation effects in magnetic penetration depth of high-{Tc} films

    SciTech Connect

    Lemberger, T.R.; Ulm, E.R.; Paget, K.M.; Matijasevic, V.C.

    1996-12-31

    The authors do not find evidence for strong fluctuation effects in the magnetic penetration depth of films of YBCO. While in YBCO crystals it has been found that {lambda}{sup {minus}3}(T) is linear in T below {Tc} over a range of temperatures from 5K to 15K, {lambda}{sup {minus}2}(T) is linear over a range of several degrees K just below {Tc} in YBCO and SmBCO films with very sharp transitions. At low temperatures, they find a T-linear behavior in {lambda}(T) in pure YBCO and SmBCO films. However, they do not find evidence that the T-linear behavior is due to thermal phase fluctuations which should increase in strength as {lambda}(0) increases.

  18. The Integration of YBCO Coated Conductors into Magnets and Rotating Machinery (Postprint)

    DTIC Science & Technology

    2012-02-01

    AFRL-RZ-WP-TP-2012-0119 THE INTEGRATION OF YBCO COATED CONDUCTORS INTO MAGNETS AND ROTATING MACHINERY (POSTPRINT) G.A. Levin and P.N...COVERED (From - To) February 2012 Conference Paper Postprint 01 January 2004 – 01 January 2006 4. TITLE AND SUBTITLE THE INTEGRATION OF YBCO COATED...Keystone, CO (August 29-September 2, 2005) The Integration of YBCO Coated Conductors into Magnets and Rotating Machinery G. A. Levin and P. N. Barnes

  19. Critical Current in YBCO Coated Conductors in the Presence of a Macroscopic Defect (POSTPRINT)

    DTIC Science & Technology

    2010-03-01

    AFRL-RZ-WP-TP-2010-2084 CRITICAL CURRENT IN YBCO COATED CONDUCTORS IN THE PRESENCE OF A MACROSCOPIC DEFECT (POSTPRINT) Milan Polak and...CRITICAL CURRENT IN YBCO COATED CONDUCTORS IN THE PRESENCE OF A MACROSCOPIC DEFECT (POSTPRINT) 5a. CONTRACT NUMBER In-house 5b. GRANT NUMBER 5c...display, or disclose the work. 14. ABSTRACT We have studied the effects of localized defects in the YBCO coated conductors on the critical current. The

  20. Pulsed Laser Deposition of YBCO With Yttrium Oxide Buffer Layers (Postprint)

    DTIC Science & Technology

    2012-02-01

    AFRL-RZ-WP-TP-2012-0092 PULSED LASER DEPOSITION OF YBCO WITH YTTRIUM OXIDE BUFFER LAYERS (POSTPRINT) Paul N. Barnes, Timothy J. Haugan...Paper Postprint 01 January 2002 – 01 January 2004 4. TITLE AND SUBTITLE PULSED LASER DEPOSITION OF YBCO WITH YTTRIUM OXIDE BUFFER LAYERS (POSTPRINT...Textured metallic substrate based HTS coated conductors with the YBCO /CeO2/YSZ/CeO2/Ni architecture have already been shown to exhibit high current

  1. In-Situ Approach to Introduce Flux Pinning in YBCO (Postprint)

    DTIC Science & Technology

    2012-02-01

    AFRL-RZ-WP-TP-2012-0118 IN-SITU APPROACH TO INTRODUCE FLUX PINNING IN YBCO (POSTPRINT) T.J. Haugan Mechanical Energy Conversion Branch...Article Postprint 04 April 2005 – 04 April 2007 4. TITLE AND SUBTITLE IN-SITU APPROACH TO INTRODUCE FLUX PINNING IN YBCO (POSTPRINT) 5a. CONTRACT...published as a chapter in Flux Pinning and AC Loss Studies in YBCO Coated Conductors. Work on this effort was completed in 2007. This is the best

  2. Stability and Normal Zone Propagation Speed in YBCO Coated Conductors with Increased Interfacial Resistance (PREPRINT)

    DTIC Science & Technology

    2010-03-01

    AFRL-RZ-WP-TP-2010-2085 STABILITY AND NORMAL ZONE PROPAGATION SPEED IN YBCO COATED CONDUCTORS WITH INCREASED INTERFACIAL RESISTANCE...August 2006 – 25 August 2008 4. TITLE AND SUBTITLE STABILITY AND NORMAL ZONE PROPAGATION SPEED IN YBCO COATED CONDUCTORS WITH INCREASED INTERFACIAL...reproduce, release, perform, display, or disclose the work. 14. ABSTRACT We will discuss how stability and speed of normal zone propagation in YBCO

  3. Thermogravimetric evaluation of the suitability of precursors for MOCVD

    NASA Astrophysics Data System (ADS)

    Kunte, G. V.; Shivashankar, S. A.; Umarji, A. M.

    2008-02-01

    A method based on the Langmuir equation for the estimation of vapour pressure and enthalpy of sublimation of subliming compounds is described. The variable temperature thermogravimetric/differential thermogravimetric (TG/DTG) curve of benzoic acid is used to arrive at the instrument parameters. Employing these parameters, the vapour pressure-temperature curves are derived for salicylic acid and camphor from their TG/DTG curves. The values match well with vapour pressure data in the literature, obtained by effusion methods. By employing the Clausius-Clapeyron equation, the enthalpy of sublimation could be calculated. Extending the method further, two precursors for metal-organic chemical vapour deposition (MOCVD) of titanium oxide bis-isopropyl bis tert-butyl 2-oxobutanoato titanium, Ti(OiPr)2(tbob)2, and bis-oxo-bis-tertbutyl 2-oxobutanoato titanium, [TiO(tbob)2]2, have been evaluated. The complex Ti(OiPr)2(tbob)2 is found to be a more suitable precursor. This approach can be helpful in quickly screening for the suitability of a compound as a CVD precursor.

  4. Microstructure and Critical Current Density of YBa2Cu3O7-x + BaSnO3 Thick Films Grown with Pre-Mixed Pulsed Laser Ablation Target (Postprint)

    DTIC Science & Technology

    2010-01-01

    0.21 nm (TEM) was used after standard sample preparation to observe the nanocolumns of BSO in the YBCO matrix. RESULTS AND DISCUSSION The Tc...86 88 90 0 500 1000 1500 2000 2500 3000 T C (K ) Thickness ( nm ) YBCO + BSO (20 mol%) FIGURE 1. Tc in YBCO + 20 mol% BSO films with varying thickness...107 0 500 1000 1500 2000 2500 3000 0 T 1 T 3 T 5 T 7 T 8 T J C (A /c m 2 ) Thickness ( nm ) 77 K H // C FIGURE 2. Jc values for varying thickness YBCO

  5. Influence of oxygen partial pressure and silver additions on microstructure and related properties of YBCO superconductors

    SciTech Connect

    Singh, J.P.; Joo, J.; Guttschow, R.; Poeppel, R.B.

    1992-02-01

    Microstructure has a great influence on the mechanical and superconducting properties of YBCO. Mechanical properties of YBCO can be improved by both modifying the monolithic microstructure and developing composites of YBCO with silver (Ag). When monolithic YBCO was sintered to high densities ({approx} 91%) at a relatively low temperature ({approx} 910{degrees}C) by controlling oxygen partial pressure during sintering, the result was a small-grain microstructure (average grain size {approx} 5 {mu}m) and hence a high strength of 191 {plus_minus} 7 MPa. Addition of Ag as a second phase further improved the strength of YBCO. Composites of YBCO with 10 to 15 vol % Ag has a strength of 225 {plus_minus} 6 MPa and a fracture toughness of 3.3 {plus_minus} 0.2 MPa{radical}m. These improvements are believed to be due to compressive stresses in the YBCO matrix as a result of thermal mismatch between the YBCO and Ag phases. Furthermore, the Ag particles may provide increased resistance to crack propagation by pinning the crack. On the other hand, addition of Ag as a dopant to substitute for Cu sites in YBCO has a profound but nonmonotonic effect on grain microstructure and the resulting critical current density.

  6. Influence of oxygen partial pressure and silver additions on microstructure and related properties of YBCO superconductors

    SciTech Connect

    Singh, J.P.; Joo, J.; Guttschow, R.; Poeppel, R.B.

    1992-02-01

    Microstructure has a great influence on the mechanical and superconducting properties of YBCO. Mechanical properties of YBCO can be improved by both modifying the monolithic microstructure and developing composites of YBCO with silver (Ag). When monolithic YBCO was sintered to high densities ({approx} 91%) at a relatively low temperature ({approx} 910{degrees}C) by controlling oxygen partial pressure during sintering, the result was a small-grain microstructure (average grain size {approx} 5 {mu}m) and hence a high strength of 191 {plus minus} 7 MPa. Addition of Ag as a second phase further improved the strength of YBCO. Composites of YBCO with 10 to 15 vol % Ag has a strength of 225 {plus minus} 6 MPa and a fracture toughness of 3.3 {plus minus} 0.2 MPa{radical}m. These improvements are believed to be due to compressive stresses in the YBCO matrix as a result of thermal mismatch between the YBCO and Ag phases. Furthermore, the Ag particles may provide increased resistance to crack propagation by pinning the crack. On the other hand, addition of Ag as a dopant to substitute for Cu sites in YBCO has a profound but nonmonotonic effect on grain microstructure and the resulting critical current density.

  7. STANFORD IN-SITU HIGH RATE YBCO PROCESS: TRANSFER TO METAL TAPES AND PROCESS SCALE UP

    SciTech Connect

    Malcolm R. Beasley; Robert H.Hammond

    2009-04-14

    Executive Summary The materials science understanding of high rate low cost processes for Coated Conductor will benefit the application to power utilities for low loss energy transportation and power generation as well for DOD applications. The research in this program investigated several materials processing approaches that are new and original, and are not being investigated elsewhere. This work added to the understanding of the material science of high rate PVD growth of HTSC YBCO assisted by a liquid phase. A new process discovered uses amorphous glassy precursors which can be made at high rate under flexible conditions of temperature and oxygen, and later brought to conditions of oxygen partial pressure and temperature for rapid conversion to YBCO superconductor. Good critical current densities were found, but further effort is needed to optimize the vortex pinning using known artificial inclusions. A new discovery of the physics and materials science of vortex pinning in the HTSC system using Sm in place of Y came at growth at unusually low oxygen pressure resulting in clusters of a low or non superconducting phase within the nominal high temperature phase. The driving force for this during growth is new physics, perhaps due to the low oxygen. This has the potential for high current in large magnetic fields at low cost, applicable to motors, generators and transformers. The technical demands of this project were the motivation for the development of instrumentation that could be essential to eventual process scale up. These include atomic absorption based on tunable diode lasers for remote monitoring and control of evaporation sources (developed under DARPA support), and the utility of Fourier Transform Infrared Reflectivity (FTIR) for aid in the synthesis of complex thin film materials (purchased by a DURIP-AFOSR grant).

  8. Novel method for fabrication of integrated resistors on bilayer Ag/YBa2Cu3O7 films using Ni implantation

    NASA Astrophysics Data System (ADS)

    LaGraff, J. R.; Chan, H.; Murduck, J. M.; Hong, S. H.; Ma, Q. Y.

    1997-10-01

    A novel ion implantation method is described for fabricating low inductance integrated resistors on Ag/YBa2Cu3O7 (YBCO) bilayer thin films. Parallel high and low value resistors were simultaneously formed by patterning bilayer films into 10-μm-wide lines, then masking and implanting with Ni to selectively inhibit superconductivity in YBCO. Low value resistors (<1 Ω/sq) were formed at 77 K as the supercurrent bypassed the Ni-doped nonsuperconducting YBCO and was shunted through the overlying low resistivity Ag metal. High value resistors (20-140 Ω/sq) were formed by removing Ag from above the implanted YBCO forcing the current through the implanted YBCO region. The sheet resistance of both types of resistors was found to increase systematically with increasing Ni implant energy.

  9. Superconducting YBa 2Cu 3O 7- δ thin film grown on metallic film evaporated on MgO

    NASA Astrophysics Data System (ADS)

    Verdyan, A.; Azoulay, J.; Lapsker, I.

    2001-03-01

    At present it is commonly accepted that thin film formation of YBa 2Cu 3O 7- δ (YBCO) on conducting substrate is one of the keys to further development of advanced devices in the microelectronic and other applications. We have grown YBCO thin films by resistive evaporation technique on MgO coated with metallic layers (Ni or Ag). A simple inexpensive vacuum system equipped with resistively heated boats for metal and precursor mixture of yttrium, copper and barium fluoride powders was used. X-ray diffraction (XRD) and scanning electron microscopy techniques were used for texture, morphology and surface analyses respectively. Electrical and magnetical properties were determined by a standard dc four-probe method. The way of heating process is shown to be critical parameter in the film quality. The physical and electrical properties of the YBCO films are discussed in light of the fact that XRD measurements done on the metallic buffer layers have revealed a multicrystalline structure.

  10. Influence of Natural Convection and Thermal Radiation Multi-Component Transport in MOCVD Reactors

    NASA Technical Reports Server (NTRS)

    Lowry, S.; Krishnan, A.; Clark, I.

    1999-01-01

    The influence of Grashof and Reynolds number in Metal Organic Chemical Vapor (MOCVD) reactors is being investigated under a combined empirical/numerical study. As part of that research, the deposition of Indium Phosphide in an MOCVD reactor is modeled using the computational code CFD-ACE. The model includes the effects of convection, conduction, and radiation as well as multi-component diffusion and multi-step surface/gas phase chemistry. The results of the prediction are compared with experimental data for a commercial reactor and analyzed with respect to the model accuracy.

  11. Enhancement and Angular Dependence of Transport Critical Current Density in Pulsed Laser Deposited YBa2Cu3O7-x+BaSnO3 Films in Applied Magnetic Fields (Postprint)

    DTIC Science & Technology

    2007-09-25

    deposition of YBCO +BSO nanocomposite film. Films with 300 nm thickness were deposited on 100 LaAlO3 single crystal substrates as well as on buffered...due to the presence of 10 nm sized BSO nanoparticles that were formed in the YBCO films to be discussed later. It can be seen from Fig. 1 that the...10 nm bright particles in an YBCO +BSO sample. It is known that as the applied magnetic field is increased, the magnetic flux line density increases

  12. CVD method for forming B.sub.i -containing oxide superconducting films

    DOEpatents

    Wessels, Bruce W.; Marks, Tobin J.; Richeson, Darrin S.; Tonge, Lauren M.; Zhang, Jiming

    1994-01-01

    Films of high T.sub.c Bi-Sr-Ca-Cu-O superconductor have been prepared by MOCVD using volatile metal organic precursors and water vapor. The metal organic precursors are volatized along with a bismuth source, such as Bi(C.sub.6 H.sub.5).sub.3, deposited on a heated substrate to form a film, and annealed.

  13. Direct observation of twin deformation in YBa2Cu3O7-x thin films by in situ nanoindentation in TEM

    NASA Astrophysics Data System (ADS)

    Lee, Joon Hwan; Zhang, Xinghang; Wang, Haiyan

    2011-04-01

    The deformation behaviors of YBa2Cu3O7-x (YBCO) thin films with twinning structures were studied via in situ nanoindentation experiments in a transmission electron microscope. The YBCO films were grown on SrTiO3 (001) substrates by pulsed laser deposition. Both ex situ (conventional) and in situ nanoindentation were conducted to reveal the deformation of the YBCO films from the directions perpendicular and parallel to the twin interfaces. The hardness measured perpendicular to the twin interfaces is ˜50% and 40% higher than that measured parallel to the twin interfaces ex situ and in situ, respectively. Detailed in situ movie analysis reveals that the twin structures play an important role in deformation and strengthening mechanisms in YBCO thin films.

  14. High hole concentration Li-doped NiZnO thin films grown by photo-assisted metal-organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhao, Y. D.; Dong, X.; Ma, Z. Z.; Zhang, Y. T.; Wu, B.; Zhuang, S. W.; Zhang, B. L.; Li, W. C.; Du, G. T.

    2016-11-01

    High hole concentration Li-doped NiZnO thin films were grown by metal-organic chemical vapor deposition (MOCVD). The crystalline, optical, electrical, and morphological characteristics of the NiZnO films were studied as a function of lithium content. The resistance of the films decreased and the hole concentration greatly increased with increasing lithium content. However, the crystalline and optical properties were observed to degrade as the lithium content was increased. To relieve the degradation, a photo-assisted MOCVD method was used in order to restrict this degradation and this represents a new way to obtain stable high hole concentration NiZnO films.

  15. Substrate effect on thermal stability of superconductor thin films in the peritectic melting.

    PubMed

    Chen, Y Y; Fang, T F; Yan, S B; Yao, X; Tao, B W

    2012-05-31

    Systematic experiments were performed by in situ observation of the YBa(2)Cu(3)O(z) (Y123 or YBCO) melting. Remarkably, the superheating phenomenon was identified to exist in all commonly used YBCO thin films, that is, films deposited on MgO, LaAlO(3) (LAO), and SrTiO(3) (STO) substrates, suggesting a universal superheating mode of the YBCO film. Distinctively, YBCO/LAO films were found to possess the highest level of superheating, over 100 K, mainly attributed to the lattice match effect of LAO substrate, that is, its superior lattice fit with Y123 delaying the Y123 dissolving and inferior lattice matching with Y(2)BaCuO(5) (Y211) delaying the Y211 nucleation. Moreover, strong dependence of the thermal stability on the substrate material for Y123 films was also found to be associated with the substrate wettability by the liquid and the potential element doping from the substrate. Most importantly, the understanding of the superheating behavior is widely valid for more film/substrate constructions that have the same nature as the YBCO film/substrate.

  16. Experimental studies of diffusion welding of YBCO to copper using solder layers

    NASA Astrophysics Data System (ADS)

    Xie, Y.; Ouyang, Z.; Shi, L.; Kuang, Z.; Meng, M.

    2017-02-01

    The welding technology is of great importance in YBCO application. To make better joints, the diffusion welding of YBCO tape to copper has been carried out in a vacuum environment. In consideration of high welding temperature (above 200°C) could do damage to the material performance, a new kind of diffusion welding method with temperature below 200 °C has been developed recently. A new welding appliance which can offer pressure over 35Kg/mm2 and controlled temperature has been designed and built; several YBCO coated conductors joints soldered with different melting points of tins has been tested. The results showed that the diffusion can perfectly connect YBCO to copper as well as stainless steel and resistance of the joint was low, and the YBCO tape could bear 217°C for at least 15mins.

  17. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells

    SciTech Connect

    Chu, T.L. )

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  18. Method for Improving Mg Doping During Group-III Nitride MOCVD

    DOEpatents

    Creighton, J. Randall; Wang, George T.

    2008-11-11

    A method for improving Mg doping of Group III-N materials grown by MOCVD preventing condensation in the gas phase or on reactor surfaces of adducts of magnesocene and ammonia by suitably heating reactor surfaces between the location of mixing of the magnesocene and ammonia reactants and the Group III-nitride surface whereon growth is to occur.

  19. Control of BaZrO3 Nanorod Alignment in YBa2Cu3O7-x Thin Films by Microstructural Modulation (POSTPRINT)

    DTIC Science & Technology

    2010-03-01

    vicinal surface provides a means to modulate the microstructural properties, we have examined the effects induced in BZO- doped YBCO thin films...deposited on miscut SrTiO3 substrates. Our experi- ments presented here show that with increasing vicinal angle, significant changes in the microstructure...Fig. 1a shows a nonvici- nal BZO- doped YBCO film with NRs 5–6 nm in diameter, as commonly observed. The 5° vicinal sample in Fig. 1b shows only

  20. Impact of Edge-Barrier Pinning in Superconducting Thin Films (Postprint)

    DTIC Science & Technology

    2012-02-01

    Laboratory Los Alamos, NM 87545 ----------------------------------------------------- University of Kansas Department of Physics and Astronomy...centers, especially in YBa2Cu3O7−x YBCO . 1–8 To evaluate the effectiveness of these pinning centers made at the various institutions, the data are...bulk pinning in a sample. Thus, the geometrical edge barrier can have an impact on the over- all pinning affecting the properties of YBCO thin films

  1. Films.

    ERIC Educational Resources Information Center

    Philadelphia Board of Education, PA. Div. of Instructional Materials.

    The Affective Curriculum Research Project produced five films and two records during a series of experimental summer programs. The films and records form part of a curriculum designed to teach to the concerns of students. The films were an effort to describe the Philadelphia Cooperative Schools Program, to explain its importance, and to…

  2. Quench propagation studies using a small bifilar YBCO coil

    SciTech Connect

    Shiroyanagi, Y.; Sampson, W. B.; Ghosh, Arup

    2012-01-01

    Quench propagation was studied in a small bifilar coil wound from YBCO tape. Measurements were made at 77 K in self-field and at 4.2 K with an applied field. The velocity of quench propagation at 4.2 K was observed to be about an order of magnitude faster than at 77 K both in the longitudinal and transverse directions. During the course of this experiment the conductor damage limit characterized by ∫I2dt was also estimated. Details of the experiment and results are presented in this paper

  3. Microstructure and levitation properties of floating zone melted YBCO samples

    SciTech Connect

    Bashkirov, Yu.A.; Fleishman, L.S.; Vdovin, A.B.; Zubritsky, I.A.; Smirnov, V.V.; Vinogradov, A.V.

    1994-07-01

    Radiation zone melting has been used to produce texture in sintered YBCO cylindrical samples. Microstructural analysis by electron microscopy and pole figure measurements reveals that the production process gives rise to a preferential orientation within large domains. D.C. transport measurements show that changes in alignment orientation can result in the inability to carry a transport current. Both a.c. magnetic field shielding and levitation properties are substantially improved by the floating zone melting, the levitation force being increased with the texture domain size growth.

  4. In situ study through electrical resistance of growth rate of trifluoroacetate-based solution-derived YBa2Cu3O7 films

    NASA Astrophysics Data System (ADS)

    Sánchez-Valdés, C. F.; Puig, T.; Obradors, X.

    2015-02-01

    In this work, we have studied by means of in situ electrical measurements the nucleation, growth and sintering stages of epitaxial YBa2Cu3O6+δ (YBCO) superconducting thin films prepared using a chemical solution deposition approach based on metal-organic trifluoroacetate-based (TFA) precursors. Single crystal substrates (LaAlO3 and CeO2/YSZ) were used in this study. Analysis of isothermal time dependences, at different temperatures, of in situ electrical resistance of films allowed to evidence that the growth rate G is strongly temperature dependent, i.e. G is enhanced by a factor ˜15 when going from 700 to 810 °C. Additionally, we demonstrate that adding Ag-TFA in the solution may enhance the growth rate by as much as 50%, as compared to pure YBCO, thus confirming previous assessments of the strong influence of Ag doping on YBCO film growth and microstructure. In situ electrical resistance measurements show as well that an incubation time exists and we infer the origin of its temperature dependence. Finally, a thermodynamic analysis allows proposing a single equation for the growth rate of YBCO films integrating all the relevant processing parameters. Our analysis has validated the solid-gas reaction-diffusion model describing the growth of YBCO films from TFA precursors and thus enlarges the knowledge required to enhance the control of the microstructure and superconducting properties of solution-derived YBCO films.

  5. Catalyst-free growth of ZnO nanowires by metal-organic chemical vapour deposition (MOCVD) and thermal evaporation

    SciTech Connect

    Lee, Woong; Jeong, Min-Chang; Myoung, Jae-Min

    2004-08-02

    ZnO nanowires were grown on GaAs(0 0 2) substrates using metal-organic chemical vapour deposition (MOCVD) and on Si(0 0 1) substrates using thermal evaporation of source powders, respectively. It was demonstrated that well-aligned single crystalline nanowires could be grown with controlled sizes using a typical thin film deposition technique without catalysts. Arsenic doping of the ZnO nanowires grown on GaAs substrate was possible using post-growth heat-treatment, proposing a possible way of producing p-type ZnO nanowires. It was also shown that simplified process of carrier-free thermal evaporation without catalyst could be employed to grow nanowires with high yield while maintaining good crystalline and optical properties. Application potential of the nanowires as probes of atomic force microscopes (AFMs) was discussed by predicting their structural compatibility with AFM cantilevers based on continuum elasticity. It was predicted that the nanowires fabricated herein are structurally compatible with typical AFM cantilevers suggesting that they are promising candidates for high aspect ratio probes.

  6. Broad Temperature Pinning Study of 15 mol.% Zr-Added (Gd, Y)-Ba-Cu-O MOCVD Coated Conductors

    SciTech Connect

    Xu, AX; Khatri, N; Liu, YH; Majkic, G; Galstyan, E; Selvamanickam, V; Chen, YM; Lei, CH; Abraimov, D; Hu, XB; Jaroszynski, J; Larbalestier, D

    2015-06-01

    BaZrO3 (BZO) nanocolumns have long been shown to be very effective for raising the pinning force F-p of REBa2Cu3Ox (REBCO, where RE = rare earth) films at high temperatures and recently at low temperatures too. We have successfully incorporated a high density of BZO nanorods into metal organic chemical vapor deposited (MOCVD) REBCO coated conductors via Zr addition. We found that, compared to the 7.5% Zr-added coated conductor, dense BZO nanorod arrays in the 15% Zr-added conductor are effective over the whole temperature range from 77 K down to 4.2 K. We attribute the substantially enhanced J(c) at 30 K to the weak uncorrelated pinning as well as the strong correlated pinning. Meanwhile, by tripling the REBCO layer thickness to similar to 2.8 mu m, the engineering critical current density J(e) at 30 K exceeds J(e) of optimized Nb-Ti wires at 4.2 K.

  7. Bipolar electrical coil based on YBCO bulks: initial tests

    NASA Astrophysics Data System (ADS)

    Alvarez, A.; Suárez, P.; Ceballos, J. M.; Pérez, B.; Werfel, F.; Floegel-Delor, U.

    2008-02-01

    In the field of the application of HTS in electrical motors, most prototypes are made using superconducting coils based on tape and located in the position where copper coils work in a similar conventional motor. Other prototypes use superconducting bulks (usually disk-shaped) in those positions where normal magnets should work in similar conventional motors. But it is very unusual to find designs using electrical coils based on bulks. This is a challenge whose main problem is the difficulty in machining the superconductor bulks to get the proper shape because of the impossibility of bending the material to wind coils. The design of a bipolar single-turn coil made from a superconducting YBCO disk was proposed by the group of Electrical Application of Superconductors, at the University of Extremadura, several years ago to be an element for the design of a modular two-phase inductor for an air core axial-flux motor. The shape of each coil looks like an 'S'. When a current flows through the circuit, two opposite magnetic fields appear in the upper and lower halves of the piece. Until now, attempts to get a good superconducting circuit by cutting a YBCO disk into the required shape have failed because of cracks appearing in the crystal during the process. Last year, our group at the University of Extremadura began to work with ATZ GmbH who have improved the machining process and made the coils. In this paper we present the coil and the first tests carried out.

  8. Time-frequency Analyses of AE Signals in YBCO Superconductors

    NASA Astrophysics Data System (ADS)

    Nanato, N.; Takemoto, N.

    AE (Acoustic Emission) measurements are well known methods to detect mechanical signals from superconducting coil The mechanical signals could be generated by micro cracks of epoxy resins, the motion of superconductors and the thermal expansion of superconductors, which were generated before and/or after a quench. We have presented a time-frequency visualization of AE signals as a method to detect the quench. We can detect very small AE signals regardless of lectromagnetic noises and can find the time of the AE occurrence and the frequency bands of AE signals by using this method. Recently it has been presented that YBCO superconductors are delaminated and degraded by a transverse tensile stress. The delamination is accompanied with AE signals. Also, it is known that amplitudes and frequency bands of AE signals vary with causes of AE occurrence. In this paper, we present time-frequency analyses of AE signa s caused by the delamination of a YBCO superconductor and the micro of epoxy resins.

  9. Proximity Effect in Gold-Coated YBa2Cu3O7-δ Films Studied by Scanning Tunneling Spectroscopy

    NASA Astrophysics Data System (ADS)

    Sharoni, Amos; Asulin, Itay; Koren, Gad; Millo, Oded

    2004-01-01

    Scanning tunneling spectroscopy on gold layers overcoating c-axis YBa2Cu3O7-δ (YBCO) films reveals proximity-induced gap structures. The gap size reduces exponentially with the distance from a-axis facets, indicating that the proximity effect is primarily due to the (100) YBCO facets. The penetration depth of superconductivity into the gold is ˜30 nm, in good agreement with estimations for the dirty limit. The extrapolated gap at the interface is ˜15 meV, similar to the value of an s-wave component of the order parameter measured at the YBCO surface in recent point-contact experiments.

  10. Proximity effect in gold-coated YBa(2)Cu(3)O(7-delta) films studied by scanning tunneling spectroscopy.

    PubMed

    Sharoni, Amos; Asulin, Itay; Koren, Gad; Millo, Oded

    2004-01-09

    Scanning tunneling spectroscopy on gold layers overcoating c-axis YBa(2)Cu(3)O(7-delta) (YBCO) films reveals proximity-induced gap structures. The gap size reduces exponentially with the distance from a-axis facets, indicating that the proximity effect is primarily due to the (100) YBCO facets. The penetration depth of superconductivity into the gold is approximately 30 nm, in good agreement with estimations for the dirty limit. The extrapolated gap at the interface is approximately 15 meV, similar to the value of an s-wave component of the order parameter measured at the YBCO surface in recent point-contact experiments.

  11. In Situ Creation of Nanoparticles from YBCO by Pulsed Laser Deposition (Postprint)

    DTIC Science & Technology

    2012-02-01

    entailed pulsed laser deposition (PLD) of YBCO at a high background pressure of 5 Torr O2. The sizes of the nanoparticles range from ~3 to 5 nm and...pulsed laser deposition (PLD) of YBCO at a high background pressure of 5 Torr O2. The sizes of the nanoparticles range from 3 to 5 nm and are typical...are extremely small pieces of matter that have dimensions on the order of a few nm . It may well be possible to use nanoparti- cles of YBCO itself as

  12. Superconductivity suppression in YBa2Cu3O7-δ/La0.7Sr0.3MnO3 bilayer films

    NASA Astrophysics Data System (ADS)

    Sharma, Minaxi; Sharma, K. K.; Choudhary, R. J.; Kumar, Ravi

    2014-12-01

    We study the thickness effect of YBa2Cu3O7-δ (YBCO) in YBCO/La0.7Sr0.3MnO3 (LSMO) bilayer films, fabricated on LaAlO3 (001) substrate using pulsed laser deposition technique. The thickness dependent transport behavior of YBCO layer in considered bilayer systems demonstrate a clear onset critical temperature at 60 K and 80 K for 100 nm and 200 nm thick YBCO layer systems, respectively, whereas 50 nm thick YBCO system reveals complete suppression in the superconductivity. With the increase in thickness of YBCO layer, the magnetoresistance (MR) data show both positive and negative MR. The positive MR in superconducting regime dominates the negative MR, suppress the double exchange interaction. The maximum magnetoresistance ratio ˜81% at 64 K and ˜47% at 30 K temperature are observed for 200 nm and 100 nm YBCO layers, respectively. In YBCO(200 nm)/LSMO(200 nm) bilayer specimen, the temperature co-efficient of resistance is ˜8.4% K-1 at 72 K which can be practical for bolometric performances and temperature sensors.

  13. The coherent gradient sensor for film curvature measurements at cryogenic temperature.

    PubMed

    Liu, Cong; Zhang, Xingyi; Zhou, Jun; Zhou, Youhe; Feng, Xue

    2013-11-04

    Coherent Gradient Sensor (CGS) system is presented for measurement of curvatures and nonuniform curvatures changes in film-substrate systems at cryogenic temperature. The influences of the interface of refrigerator and itself on the interferograms which are accounting for the temperature effect are successfully eliminated. Based on the measurement technique, the thermal stresses (including the radial stress, circumferential stress and shear stress) of superconducting YBCO thin-film are obtained by the extended Stoney's formula during the heating process from 30K to 150K. Take the superconducting YBCO thin film as an example, the thermal stresses of which are gained successfully.

  14. Films

    NASA Astrophysics Data System (ADS)

    Li, Ming; Zhang, Yang; Shao, Yayun; Zeng, Min; Zhang, Zhang; Gao, Xingsen; Lu, Xubing; Liu, J.-M.; Ishiwara, Hiroshi

    2014-09-01

    In this paper, we investigated the microstructure and electrical properties of Bi2SiO5 (BSO) doped SrBi2Ta2O9 (SBT) films deposited by chemical solution deposition. X-ray diffraction observation indicated that the crystalline structures of all the BSO-doped SBT films are nearly the same as those of a pure SBT film. Through BSO doping, the 2Pr and 2Ec values of SBT films were changed from 15.3 μC/cm2 and 138 kV/cm of pure SBT to 1.45 μC/cm2 and 74 kV/cm of 10 wt.% BSO-doped SBT. The dielectric constant at 1 MHz for SBT varied from 199 of pure SBT to 96 of 10 wt.% BSO-doped SBT. The doped SBT films exhibited higher leakage current than that of non-doped SBT films. Nevertheless, all the doped SBT films still had small dielectric loss and low leakage current. Our present work will provide useful insights into the BSO doping effects to the SBT films, and it will be helpful for the material design in the future nonvolatile ferroelectric memories.

  15. Photoreflectance for in-situ characterization of MOCVD growth of semiconductors under micro-gravity conditions

    NASA Technical Reports Server (NTRS)

    Pollak, Fred H.

    1990-01-01

    A contactless electromodulation technique of photoreflectance (PR) was developed for in-situ monitoring of metal-organic chemical vapor deposition (MOCVD) semiconductor growth for micro-gravity applications. PR can be employed in a real MOCVD reactor including rotating substrate (approximately 500 rev/min) in flowing gases and through a diffuser plate. Measurements on GaAs and Ga(0.82)Al(0.18)As were made up to 690 C. The direct band gaps of In(x)Ga(1-x)As (x = 0.07 and 0.16) were evaluated up to 600 C. In order to address the question of real time measurement, the spectra of the direct gap of GaAs at 650 C was obtained in 30 seconds and 15 seconds seems feasible.

  16. In-situ estimation of MOCVD growth rate via a modified Kalman filter

    SciTech Connect

    Woo, W.W.; Svoronos, S.A.; Sankur, H.O.; Bajaj, J.; Irvine, S.J.C.

    1996-05-01

    In-situ laser reflectance monitoring of metal-organic chemical vapor deposition (MOCVD) is an effective way to monitor growth rate and epitaxial layer thickness of a variety of III-V and II-VI semiconductors. Materials with low optical extinction coefficients, such as ZnTe/GaAs and AlAs/GaAs for a 6,328 {angstrom} HeNe laser, are ideal for such an application. An extended Kalman filter modified to include a variable forgetting factor was applied to the MOCVD systems. The filter was able to accurately estimate thickness and growth rate while filtering out process noise and cope with sudden changes in growth rate, reflectance drift, and bias. Due to the forgetting factor, the Kalman filter was successful, even when based on very simple process models.

  17. Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

    NASA Astrophysics Data System (ADS)

    Braniste, T.; Ciers, Joachim; Monaico, Ed.; Martin, D.; Carlin, J.-F.; Ursaki, V. V.; Sergentu, V. V.; Tiginyanu, I. M.; Grandjean, N.

    2017-02-01

    In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) grown GaN. It was found that in HVPE-grown GaN, multilayer porous structures are obtained due to self-organization processes leading to a fine modulation of doping during the crystal growth. However, these processes are not totally under control. Multilayer porous structures with a controlled design have been produced by optimizing the technological process of electrochemical etching in MOCVD-grown samples, consisting of five pairs of thin layers with alternating-doping profiles. The samples have been characterized by SEM imaging, photoluminescence spectroscopy, and micro-reflectivity measurements, accompanied by transfer matrix analysis and simulations by a method developed for the calculation of optical reflection spectra. We demonstrate the applicability of the produced structures for the design of Bragg reflectors.

  18. Final report on LDRD project : outstanding challenges for AlGaInN MOCVD.

    SciTech Connect

    Mitchell, Christine Charlotte; Follstaedt, David Martin; Russell, Michael J.; Cross, Karen Charlene; Wang, George T.; Creighton, James Randall; Allerman, Andrew Alan; Koleske, Daniel David; Lee, Stephen Roger; Coltrin, Michael Elliott

    2005-03-01

    The AlGaInN material system is used for virtually all advanced solid state lighting and short wavelength optoelectronic devices. Although metal-organic chemical vapor deposition (MOCVD) has proven to be the workhorse deposition technique, several outstanding scientific and technical challenges remain, which hinder progress and keep RD&A costs high. The three most significant MOCVD challenges are: (1) Accurate temperature measurement; (2) Reliable and reproducible p-doping (Mg); and (3) Low dislocation density GaN material. To address challenge (1) we designed and tested (on reactor mockup) a multiwafer, dual wavelength, emissivity-correcting pyrometer (ECP) for AlGaInN MOCVD. This system simultaneously measures the reflectance (at 405 and 550 nm) and emissivity-corrected temperature for each individual wafer, with the platen signal entirely rejected. To address challenge (2) we measured the MgCp{sub 2} + NH{sub 3} adduct condensation phase diagram from 65-115 C, at typical MOCVD concentrations. Results indicate that it requires temperatures of 80-100 C in order to prevent MgCp{sub 2} + NH{sub 3} adduct condensation. Modification and testing of our research reactor will not be complete until FY2005. A new commercial Veeco reactor was installed in early FY2004, and after qualification growth experiments were conducted to improve the GaN quality using a delayed recovery technique, which addresses challenge (3). Using a delayed recovery technique, the dislocation densities determined from x-ray diffraction were reduced from 2 x 10{sup 9} cm{sup -2} to 4 x 10{sup 8} cm{sup -2}. We have also developed a model to simulate reflectance waveforms for GaN growth on sapphire.

  19. Radiation effects on p+n InP junctions grown by MOCVD

    NASA Technical Reports Server (NTRS)

    Messenger, Scott R.; Walters, Robert J.; Panunto, M. J.; Summers, Geoffrey P.

    1994-01-01

    The superior radiation resistance of InP over other solar cell materials such as Si or GaAs has prompted the development of InP cells for space applications. The early research on radiation effects in InP was performed by Yamaguchi and co-workers who showed that, in diffused p-InP junctions, radiation-induced defects were readily annealed both thermally and by injection, which was accompanied by significant cell recovery. More recent research efforts have been made using p-InP grown by metalorganic chemical vapor deposition (MOCVD). While similar deep level transient spectroscopy (DLTS) results were found for radiation induced defects in these cells and in diffused junctions, significant differences existed in the annealing characteristics. After injection annealing at room temperature, Yamaguchi noticed an almost complete recovery of the photovoltaic parameters, while the MOCVD samples showed only minimal annealing. In searching for an explanation of the different annealing behavior of diffused junctions and those grown by MOCVD, several possibilities have been considered. One possibility is the difference in the emitter structure. The diffused junctions have S-doped graded emitters with widths of approximately 0.3 micrometers, while the MOCVD emitters are often doped with Si and have widths of approximately 300A (0.03 micrometers). The difference in the emitter thickness can have important effects, e.g. a larger fraction of the total photocurrent is generated in the n-type material for thicker emitters. Therefore the properties of the n-InP material may explain the difference in the observed overall annealing behavior of the cells.

  20. Magnetic coupling by using levitation characteristics of YBCO superconductors

    NASA Astrophysics Data System (ADS)

    Ishigaki, H.; Ito, H.; Itoh, M.; Hida, A.; Takahata, R.

    1993-03-01

    A mechanical system which uses high lateral restoring forces of high-Tc materials as the driving force for a magnetic coupling is proposed. As the basic study of the superconducting magnetic coupling, the relationship between the lateral restoring force and levitation force, transmitted torque characteristics as a function of a twisting angle and clearance, and damping characteristics of the coupling were examined. Superiorities of the coupling such as high damping coefficients and high stability against time and twisting angle were revealed. A magnetic force sensor system was used to evaluate the superconducting characteristics of materials, and nonuniform distribution of repulsive force was observed for the YBCO pellet fabricated by the melt-powder-melt-growth process. The improvement of the homogeneity was achieved by compensating for the composition rate which had changed during the quenching process.

  1. Recent progress in MOCVD growth for thermoelectrically cooled HgCdTe medium wavelength infrared photodetectors

    NASA Astrophysics Data System (ADS)

    Gawron, W.; Martyniuk, P.; Kębłowski, A.; Kolwas, K.; Stępień, D.; Piotrowski, J.; Madejczyk, P.; Pędzińska, M.; Rogalski, A.

    2016-04-01

    The authors report on advanced metalorganic chemical vapour deposition (MOCVD) of Hg1-xCdxTe (HgCdTe) structures for high operating temperature, medium wavelength infrared (MWIR) detector application. MOCVD technology with wide range of composition and donor/acceptor doping and without post grown annealing was proved to be an excellent tool for HgCdTe heterostructure epitaxial growth used for uncooled photodetector design. The interdiffused multilayer process (IMP) technique was applied for the HgCdTe deposition. HgCdTe epilayers were grown at 350 °C with Hg source kept at 210 °C. The II/VI mole ratio was assumed in the range from 1.5 to 3 during CdTe/HgTe cycles of the IMP process. The MWIR detectors grown by MOCVD exhibit detectivity ∼7.3 × 1011 Jones at λPEAK = 3.5 μm and T = 230 K being determined by background limited photodetector (BLIP) condition.

  2. Progress in MOCVD growth of HgCdTe epilayers for HOT infrared detectors

    NASA Astrophysics Data System (ADS)

    Kebłowski, A.; Gawron, W.; Martyniuk, P.; Stepień, D.; Kolwas, K.; Piotrowski, J.; Madejczyk, P.; Kopytko, M.; Piotrowski, A.; Rogalski, A.

    2016-05-01

    In this paper we present progress in MOCVD growth of (100) HgCdTe epilayers achieved recently at the Institute of Applied Physics, Military University of Technology and Vigo System S.A. It is shown that MOCVD technology is an excellent tool in fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor doping and without post grown annealing. Particular progress has been achieved in the growth of (100) HgCdTe epilayers for long wavelength infrared photoconductors operated in HOT conditions. The (100) HgCdTe photoconductor optimized for 13-μm attain detectivity equal to 6.5x109 Jones and therefore outperform its (111) counterpart. The paper also presents technological progress in fabrication of MOCVD-grown (111) HgCdTe barrier detectors. The barrier device performance is comparable with state-of-the-art of HgCdTe photodiodes. The detectivity of HgCdTe detectors is close to the value marked HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07".

  3. Temperature and Magnetic Field Dependence of Critical Current Density of YBCO with Varying Flux Pinning Additions (POSTPRINT)

    DTIC Science & Technology

    2010-03-01

    coverage corresponding to M phase 1 nm thickness was found to be necessary to increase compared to YBCO . The op- timal layer thickness for each M phase was...kept constant in this experiment: , Y211 0.8 nm , and [17]. Using the optimal M phase thickness, the YBCO layer was also systematically varied for...AFRL-RZ-WP-TP-2010-2083 TEMPERATURE AND MAGNETIC FIELD DEPENDENCE OF CRITICAL CURRENT DENSITY OF YBCO WITH VARYING FLUX PINNING ADDITIONS

  4. Fabrication of YBCO-LSMO-YBCO Lateral Structure with AFM Lithography

    NASA Astrophysics Data System (ADS)

    Ishii, K.; Tachiki, M.; Ooi, S.; Hirata, K.

    We have tried to make the superconductor/half metal/superconductor (SC/HF/SC) Josephson junction to make clear a long range proximity effect. The structure was consisted of high-Tc superconductor YBa2Cu3O7-x and half metallic ferromagnet La0.7Sr0.3MnO3 thin films deposited by pulse laser deposition on SrTiO3(100) single crystal substrates. The SC/HF/SC lateral structure was made by scratching with the atomic force microscope (AFM) probe. We could cut the ditch which has 30 nm width and 50 nm depth. We have investigated the I-V and R-T measurements of the structure. The structure after the fabrication did not show the superconducting state and we could not find the Josephson current.

  5. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Final subcontract report, 1 July 1988--31 December 1991

    SciTech Connect

    Chu, T.L.

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  6. Fiber optic quench detection via optimized Rayleigh Scattering in high-field YBCO accelerator magnets

    SciTech Connect

    Flanagan, Gene

    2016-02-17

    Yttrium barium copper oxide (YBCO) coated conductors are known for their ability to operate in the superconducting state at relatively high temperatures, even above the boiling point of liquid nitrogen (77 K). When these same conductors are operated at lower temperatures, they are able to operate in much higher magnetic fields than traditional superconductors like NiTi or Nb3Sn. Thus, YBCO superconducting magnets are one of the primary options for generating the high magnetic fields needed for future high energy physics devices. Due to slow quench propagation, quench detection remains one of the primary limitations to YBCO magnets. Fiber optic sensing, based upon Rayleigh scattering, has the potential for spatial resolution approaching the wavelength of light, or very fast temporal resolution at low spatial resolution, and a continuum of combinations in between. This project has studied, theoretically and experimentally, YBCO magnets and Rayleigh scattering quench detection systems to demonstrate feasibility of the systems for YBCO quench protection systems. Under this grant an experimentally validated 3D quench propagation model was used to accurately define the acceptable range of spatial and temporal resolutions for effective quench detection in YBCO magnets and to evaluate present-day and potentially improved YBCO conductors. The data volume and speed requirements for quench detection via Rayleigh scattering required the development of a high performance fiber optic based quench detection/data acquisition system and its integration with an existing voltage tap/thermo-couple based system. In this project, optical fibers are tightly co-wound into YBCO magnet coils, with the fiber on top of the conductor as turn-to-turn insulation. Local changes in the temperature or strain of the conductor are sensed by the optical fiber, which is in close thermal and mechanical contact with the conductor. Intrinsic imperfections in the fiber reflect Rayleigh

  7. Control of BaZrO3 Nanorod Alignment in YBa2Cu3O7-X Thin Films by Microstructural Modulation (POSTPRINT)

    DTIC Science & Technology

    2009-03-01

    microstructural properties, we have examined the effects induced in BZO- doped YBCO thin films deposited on miscut SrTiO3 substrates. Our experi- ments presented...microstructures of the vicinal films for miscut angles of 0°, 5°, 10°, and 20°. For comparison, Fig. 1a shows a nonvici- nal BZO- doped YBCO film with NRs 5–6...roughly 14 nm in 10° vicinal BZO- doped films.19 This sug- gests a possible correlation between the vicinal angle and the spacing of the dislocations

  8. Coaxial line configuration for microwave power transmission study of YBa2Cu3O(7-delta) thin films

    NASA Technical Reports Server (NTRS)

    Chorey, C. M.; Miranda, F. A.; Bhasin, K. B.

    1991-01-01

    Microwave transmission measurements through YBa2Cu3O(7-delta) (YBCO) high-transition-temperature superconducting thin films on lanthanum aluminate (LaAlO3) have been performed in a coaxial line at 10 GHz. LaAlO3 substrates were ultrasonically machined into washer-shaped discs, polished, and coated with laser-ablated YBCO. These samples were mounted in a 50-ohm coaxial air line to form a short circuit. The power transmitted through the films as a function of temperature was used to calculate the normal state conductivity and the magnetic penetration depth for the films.

  9. Coaxial line configuration for microwave power transmission study of YBa2Cu3O(7-delta) thin films

    NASA Astrophysics Data System (ADS)

    Chorey, C. M.; Miranda, F. A.; Bhasin, K. B.

    1991-12-01

    Microwave transmission measurements through YBa2Cu3O(7-delta) (YBCO) high-transition-temperature superconducting thin films on lanthanum aluminate (LaAlO3) have been performed in a coaxial line at 10 GHz. LaAlO3 substrates were ultrasonically machined into washer-shaped discs, polished, and coated with laser-ablated YBCO. These samples were mounted in a 50-ohm coaxial air line to form a short circuit. The power transmitted through the films as a function of temperature was used to calculate the normal state conductivity and the magnetic penetration depth for the films.

  10. Growth of YBa sub 2 Cu sub 3 O sub 7 minus x thin films on Si with a CoSi sub 2 buffer layer

    SciTech Connect

    Luo, L.; Muenchausen, R.E.; Maggiore, C.J. ); Jimenez, J.R.; Schowalter, L.J. )

    1991-01-28

    By using the pulsed laser deposition technique, high-temperature superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} (YBCO) films were grown on Si(001) with a 36 nm single-crystal {l angle}001{r angle} oriented CoSi{sub 2} buffer layer. The films, grown at a substrate temperature of {similar to}700 {degree}C, have a metallic resistive temperature dependence with zero resistance at 85 K. X-ray diffraction, scanning electron microscopy, and ion channeling studies show that the YBCO films are polycrystalline but are strongly {ital c}-axis oriented normal to the Si substrate. Diffusion at the interface between the YBCO film and silicide buffer layer was minimized. This is essential to the growth of high-temperature superconducting films on Si substrates.

  11. Microstructural Characterization of YBa2Cu3O7-x Films with BaZrO3 Nanorods Grown on Vicinal SrTiO3 Substrates (Postprint)

    DTIC Science & Technology

    2010-03-01

    cleaned and mounted in the deposition chamber using colloidal Ag paint. YBCO + BZO films of 160–240 nm thickness were deposited by pulsed laser deposition...bars indicate 100 nm . TABLE I BZO SURFACE PARTICLE AREA DENSITY AND SIZE are also observable at lower magnification of the surface of the non-vicinal 6...modulated surface provided by the vicinal substrate influences the crystalline quality of the YBCO matrix and BZO columnar formation through the

  12. A new method to preserve the c-axis growth of thick YBa 2Cu 3O 7-δ films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Zhu, Dongliang; Huang, Jie; Li, Hui; Shen, Mingrong; Su, Xiaodong

    2009-11-01

    YBa2Cu3O7-δ (YBCO) films were prepared on (1 0 0) MgO substrates by pulsed laser deposition (PLD) method. In order to eliminate the a-axis growth, which is commonly observed in the YBCO film thicker than a critical value, we developed a new PLD target that was sintered at a temperature far below YBCO 123 phase formation. The surface analysis made by AFM technique confirmed that very fine particles of around 20 nm size could be ejected from the new target to the substrate. The fine oxide clusters could be easily moved and incorporated into the YBCO phase thus benefited the c-axis growth even in the thick films. For instance, only the c-axis growth in the new film with a thickness of about 650 nm was larger than a critical thickness of the a-axis growth. However, in the standard film of the same thickness, there is ∼24.5% of the a-axis growth accompanying the main c-axis growth. Therefore, the c-axis growth could be preserved in the very thick YBCO film by a non-superconducting target.

  13. Electron and Composite Fermion Transport in MOCVD Grown GaAs/AlGaAs Heterostructures

    NASA Astrophysics Data System (ADS)

    Zudov, M. A.; Du, R. R.; Simmons, J. A.; Chui, H. C.

    1996-03-01

    Previously, high quality fractional quantum Hall effect(FQHE) data was accessible only from MBE-grown heterostructures. Sandia National Labs has recently grown high purity MOCVD GaAs/AlGaAs heterostructure with 2DEG mobility of 2.0x10^6 cm^2/Vs[1]. Material parameters such as impurity potential profile, defects and interface quality are expected to be modified for MOCVD. While these are believed to affect predominantly the carrier scattering in 2DEG, their effects on quantum transport properties (in particular the experimental effective mass and spin g-factor of composite fermions) are also worth examination. We report on temperature-dependent Shubnikov -de Haas(SdH) oscillations near zero magnetic field, SdH near Landau level filling factor ν = 1/2, 3/2, and angular dependent magnetoresistance mesurements on the FQHE states around ν = 3/2 in high-density (up to 3.2x10^11 cm-2) MOCVD samples. Measurements were performed in a 20mK/20T ^3He-^4He mixture dilution refrigerator. Our results around ν = 3/2 conform to the same composite fermion level scheme obtained earlier for low-density MBE samples[2]. [1] H. C. Chui, B. E. Hammons, N. E. Harff, J. A. Simmons and M. E. Sherwin, to appear in Appl. Phys. Lett. [2] R. R. Du, A. S. Yeh, H. L. Stormer, D. C. Tsui, L. N. Pfeifer, K. W. West, Phys. Rev. Lett. 75, 3926(1995)

  14. Characteristics of grain boundaries in YBCO and BSCCO-2212 bicrystals lying in the low angle to high angle crossover regime

    NASA Astrophysics Data System (ADS)

    Larbalestier, David C.

    1996-03-01

    The characteristics of grain boundaries lying in the low angle to high angle crossover regime in thin film and bulk scale YBCO and bulk BSCCO-2212 bicrystals have been studied. Such grain boundaries can be considered as periodic or quasi-periodic structures consisting of grain boundary dislocation barriers separated by channels of strong coupling. This description is valid up to some critical cut off angle at which the whole grain boundary becomes a weak link. The cutoff occurs at lower angles for thin films than for bulk samples and also varies somewhat from one sample to another and from one material to another. Recent study of BSCCO-2212 bicrystals has shown that [100] tilt boundaries containing basal plane facets can be distinguished from those without them because the former have linear components characteristic of c axis transport in them. Both the electromagnetic and the microstructural aspects of our recent studies will be reviewed. My principal collaborators are S. Babcock, X. Y. Cai, M. Field, D. L. Kaiser (NIST), A. Gurevich, N. Heinig, J.E. Nordman, I-Fei Tsu, J. L. Vargas and Jyh-Lih Wang Work primarily supported by NSF Materials Research Group Program with additional support by EPRI and ARPA.

  15. Critical Exponents of the Superconducting Transition in Polycrystalline YBCO.

    NASA Astrophysics Data System (ADS)

    Joshi, R. J.; Hallock, R. B.; Taylor, J. A.

    1996-03-01

    We present results of measurements designed to study superconducting I-V scaling in samples of bulk YBCO with varying morphologies and at selected magnetic fields 0.5<= H<= 10 T. I-V isotherm measurements performed near the superconducting transition on the samples are consistent with recent predictions of I-V scaling, with critical exponents ν≈ 1.2-1.5 and z≈ 2.6-4. The values for ν are comparable to those previously(T.K. Worthington, E. Olsson, C.S. Nichols, T.M. Shaw and D.R. Clarke, Phys. Rev. B 43), 10538 (1991) . reported(R.H. Koch, V. Foglietti, W.J. Gallagher,G. Koren, A. Gupta and M.P.A. Fisher, Phys. Rev. Lett. 63), 1511 (1989).. The values for z are consistent with those reported by Tiernan and Hallock(W.M. Tiernan, R. Joshi and R.B. Hallock, Phys. Rev. B. 48), 3423 (1993). but are somewhat lower than what is predicted by the glassy models. The morpholoogy and magnetic field dependence of z will be described.

  16. Phase dynamics of low critical current density YBCO Josephson junctions

    NASA Astrophysics Data System (ADS)

    Massarotti, D.; Stornaiuolo, D.; Rotoli, G.; Carillo, F.; Galletti, L.; Longobardi, L.; Beltram, F.; Tafuri, F.

    2014-08-01

    High critical temperature superconductors (HTS) based devices can have impact in the study of the phase dynamics of Josephson junctions (JJs) thanks to the wide range of junction parameters they offer and to their unconventional properties. Measurements of current-voltage characteristics and of switching current distributions constitute a direct way to classify different regimes of the phase dynamics and of the transport, also in nontrivial case of the moderately damped regime (MDR). MDR is going to be more and more common in JJs with advances in nanopatterning superconductors and synthesizing novel hybrid systems. Distinctive signatures of macroscopic quantum tunneling and of thermal activation in presence of different tunable levels of dissipation have been detected in YBCO grain boundary JJs. Experimental data are supported by Monte Carlo simulations of the phase dynamics, in a wide range of temperatures and dissipation levels. This allows us to quantify dissipation in the MDR and partially reconstruct a phase diagram as guideline for a wide range of moderately damped systems.

  17. Degradation of the performance of a YBCO-coated conductor double pancake coil due to epoxy impregnation

    NASA Astrophysics Data System (ADS)

    Takematsu, T.; Hu, R.; Takao, T.; Yanagisawa, Y.; Nakagome, H.; Uglietti, D.; Kiyoshi, T.; Takahashi, M.; Maeda, H.

    2010-09-01

    Now that YBCO-coated conductors have been commercialized, a number of YBCO coils have been developed. However, their basic performances have not been systematically investigated so far. Here, we demonstrate that of a YBCO double pancake coil. The critical current of an epoxy impregnated YBCO double pancake coil was substantially degraded, i.e. the normal voltage appears above 8 A, only 18% of that for the dry coil. It was inferred that degradation occurs if the cumulative radial stress developed during cool down exceeds the critical transverse stress for the YBCO-coated conductor (typically 10 MPa). Under these conditions, the conductor was debonded at the interface between the buffer layer and YBCO layers, or fractured in the YBCO layer itself, causing cracks on the YBCO layer, resulting in a significant decline of the critical current. These negative effects are suppressed if the coils are dry wound or impregnated with paraffin, as the bonding strengths between turns are negligible and therefore turns are separated if the cumulative radial stress tends to be tensile. For non-circular coils in which epoxy impregnation is inevitable, degradation due to cumulative tensile transverse stress is still the major problem.

  18. Superconductivity, structure visualization, mechanical strength promotion and Raman spectra of hafnium-doped-123-YBCO synthesized via urea precursor route

    NASA Astrophysics Data System (ADS)

    Elsabawy, Khaled M.

    2011-08-01

    The pure YBCO (YBa2Cu3O7) and its variant hafnium containing superconductors with general formula: Y1-xHfxBa2Cu3Oz, where x = 0.1, 0.2, and 0.4 mole, respectively, were synthesized by solution route using urea as precursor forming agent. X-ray measurements indicated that Hf4+ ions have a negligible effect on the main crystalline structure and substitute Y-sites successfully in lattice structure of 123-YBCO at low levels of hafnium doping (x = 0.1 → 0.2 mole). From SE-microscopy mapping and EDX elemental analysis Hf4+ was detected qualitatively with good approximation to the actual molar ratio but not observed at 123-YBCO grain boundaries which confirm that hafnium (IV) has diffused regularly into material bulk of superconducting 123-YBCO-phase at low levels of concentrations. Structure visualization of Hf-doped-123-YBCO was made to confirm success of hafnium substitutions inside crystal lattice on Y-sites of 123-YBCO superconductors. Hafnium dopings affected sharply on the main vibrating modes of YBCO regime particularly on the apical oxygen (O4) vibrational mode A1g. Magnetic susceptibility measurements proved that hafnium dopings have strong effect on the transport properties of YBCO-composites regime. Hafnium promotes mechanical tensile coefficient recording maxima 35.7 MPa for x = 0.4 mole.

  19. Surface Science in an MOCVD Environment: Arsenic on Vicinal Ge(100)

    SciTech Connect

    McMahon, W. E.; Olson, J. M.

    1998-11-01

    Scanning tunneling microscope (STM) images of arsine-exposed vicinal Ge(100) surfaces show that most As/Ge steps are reconstructed, and that a variety of different step structures exist. The entire family of reconstructed As/Ge steps can be divided into two types, which we have chosen to call ''single-row'' steps and ''double-row'' steps. In this paper we propose a model for a double-row step created by annealing a vicinal Ge(100) substrate under an arsine flux in a metal-organic chemical vapor deposition (MOCVD) chamber.

  20. Gas phase adduct reactions in MOCVD growth of GaN

    SciTech Connect

    Thon, A.; Kuech, T.F.

    1996-11-01

    Gas phase reactions between trimethylgallium (TMG) and ammonia were studied at high temperatures, characteristic to MOCVD of GaN reactors, by means of in situ mass spectroscopy in a flow tube reactor. It is shown, that a very fast adduct formation followed by elimination of methane occurs. The decomposition of TMG and the adduct-derived compounds are both first order and have similar apparent activation energy. The pre-exponential factor of the adduct decomposition is smaller, and hence is responsible for the higher full decomposition temperature of the adduct relative to that of TMG.

  1. Chemical solution approaches to YBa2Cu3O7_delta-Au nanocomposite superconducting thin films.

    PubMed

    Martínez-Julián, F; Ricart, S; Pomar, A; Col, M; Abellán, P; Sandiumenge, F; Casanove, M J; Obradors, X; Puig, T; Pastoriza-Santos, I; Liz-Marzán, L M

    2011-04-01

    We explore the feasibility of preparing YBa2CU3O7-Au (YBCO-Au) nanocomposite thin films by chemical solution deposition (CSD). Two approaches were used: (i) A standard in-situ methodology where Au metallorganic salts are added into the precursor solution of YBCO trifluoroacetate (TFA) salts and (ii) a novel approach where stable colloidal solutions of preformed gold nanoparticles (5-15 nm) were homogeneously mixed with TFA-YBCO solutions. A detailed analysis of the microstructure of the films showed that in both cases, there is a strong tendency of gold nanoparticles to migrate to the film surface. However the kinetics of this migration evidences important differences and in the case of preformed nanoparticles their size remains unchanged (a few nanometers) whereas for the in-situ nanocomposites gold ripening leads to large particles (hundreds of nanometers). The grown YBCO-Au films showed good superconducting characteristics (J(c) 2 MA/cm2 at 77 K) but the absence of Au inclusions inside the YBCO matrix explains the fact that no enhancement of vortex pinning was observed.

  2. High critical current densities of YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} thin films on buffered technical substrates

    SciTech Connect

    Knierim, A.; Auer, R.; Geerk, J.; Linker, G.; Meyer, O.; Reiner, H.; Schneider, R.

    1997-02-01

    C-axis oriented YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (YBCO) thin films were deposited on polycrystalline metallic tapes buffered with yttria stabilized zirconia (YSZ). The in-plane alignment of the YSZ layers achieved by simultaneous ion bombardment of the growing film (ion beam assisted deposition) and of the postdeposited YBCO thin films was studied by x-ray diffraction as a function of the buffer layer thickness. A significant improvement of the in-plane texture, achieved for buffer layers exceeding a thickness of about 1.5 {mu}m, resulted in high critical current densities above 10{sup 6} A/cm{sup 2} of the YBCO films. {copyright} {ital 1997 American Institute of Physics.}

  3. Film growth of BaZrO3-doped YBa2Cu3O7-δ by using fluorine-free metal-organic deposition

    NASA Astrophysics Data System (ADS)

    Lu, F.; Kametani, F.; Hellstrom, E. E.

    2012-01-01

    In this study, BaZrO3 (BZO)-doped YBCO films were fabricated on SrTiO3(100) single-crystal substrates by a fluorine-free metal-organic deposition (MOD) process. We added extra Ba and Zr organic salts, which formed well-dispersed ˜10-25 nm sized BaZrO3 nanoparticles in the YBCO films. The in-field critical current density (Jc) and the peak pinning force (Fp) were greatly enhanced in the BZO-doped sample at 77 K relative to pure YBCO films. The optimal BZO content that gave the highest peak pinning force of ˜10 GN m-3 in a ˜180 nm thick film was found to be x = 0.10 for YBCO + xBZO films, where x is moles of BZO per 1 mol of YBCO. The angular dependence of in-field Jc measurements shows the BZO nanoparticles increased Jc over the entire angular range and also reduced the angular anisotropy measured at 4 T at 77 K.

  4. High Temperature Superconducting Films and Multilayers for Electronics

    DTIC Science & Technology

    1992-02-20

    COSATI CODES 18. SUBJECT TERMS (Continue on reverse if necenery and identify by block number) FIELD GROUP SUB-GROUP superconductors, yttrium , barium...Experiments were performed to synthesize Ca- doped YBCO films (10% of the Y replaced by Ca) with a 1:2:4 structure and composition. This material was...with SrTiO3 is its high real and imaginary dielectric constants which slow and attenuate signals. The resistivity of epitaxial LaAIO 3 films was four

  5. Morphology and etching studies on YBCO and CuO single crystals

    NASA Astrophysics Data System (ADS)

    Prabhakaran, D.; Subramanian, C.; Balakumar, S.; Ramasamy, P.

    1999-06-01

    Single crystals of YBCO (Y123) and CuO have been grown from a BaO-CuO (28:72) flux using a low axial gradient furnace (∼1°C/cm). Growth morphology of the grown crystals was studied using an optical microscope, scanning electron microscopy and atomic force microscopy. Cell parameter values and chemical composition of the grown crystals were determined from the X-ray diffraction data and inductively coupled plasma analysis, respectively. Etching studies were done for both the crystals using different etchants. Oxygen stoichiometry of the YBCO crystal was determined by iodometry titration analysis.

  6. Improvements in MOCVD growth of Hg1-xCdxTe heterostructures for uncooled infrared photodetectors

    NASA Astrophysics Data System (ADS)

    Piotrowski, A.; Gawron, W.; Klos, K.; Pawluczyk, J.; Piotrowski, J.; Madejczyk, P.; Rogalski, A.

    2005-09-01

    We report here the recent progress at VIGO/MUT (Military University of Technology) MOCVD Laboratory in the growth of Hg1-xCdxTe multilayer heterostructures for various types of uncooled infrared devices. The detectors are optimized for any wavelength within 1-12 μm spectral range. Hg1-xCdxTe growth with interdiffused multilayer process (IMP) technique has been improved. The total flow of the carrier gas was optimized to improve lateral uniformity of the composition and doping. The parasitic transient stages between the CdTe and HgTe phases were reduced to reasonable minimum. As a result, we were able to grow layers with homogeneous composition and doping, characterized by steep interfaces. The additional benefits were improved morphology, reduced dislocation density, and minimized consumption of precursors. The other issues addressed in this work were growth of heavy As-doped low-x and heavy Idoped high-x materials. Special modification to IMP process has been applied for in-situ control of stoichiometry. To maintain low vacancy concentration, special growth finish procedure has been developed. No post-growth thermal anneal was necessary for device-quality material. The MOCVD grown heterostructures have been successfully used for advanced uncooled infrared photodetectors such as multiple heterojunction photodiodes, multicolor and specially shaped spectral response multiabsorber devices.

  7. Fabrication of GaN nanotubular material using MOCVD with aluminum oxide membrane

    NASA Astrophysics Data System (ADS)

    Jung, Woo-Gwang; Jung, Se-Hyuck; Kung, Patrick; Razeghi, Manijeh

    2006-02-01

    GaN nanotubular material is fabricated with aluminum oxide membrane in MOCVD. SEM, XRD, TEM and PL are employed to characterize the fabricated GaN nanotubular material. An aluminum oxide membrane with ordered nano holes is used as template. Gallium nitride is deposited at the inner wall of the nano holes in aluminum oxide template, and the nanotubular material with high aspect ratio is synthesized using the precursors of TMG and ammonia gas. Optimal synthesis condition in MOCVD is obtained successfully for the gallium nitride nanotubular material in this research. The diameter of GaN nanotube fabricated is approximately 200 ~ 250 nm and the wall thickness is about 40 ~ 50 nm. GaN nanotubular material consists of numerous fine GaN particulates with sizes ranging 15 to 30 nm. The composition of gallium nitride is confirmed to be stoichiometrically 1:1 for Ga and N by EDS. XRD and TEM analyses indicate that grains in GaN nanotubular material have nano-crystalline structure. No blue shift is found in the PL spectrum on the GaN nanotubular material fabricated in aluminum oxide template.

  8. Epitaxial Growth of BGaAs and BGaInAs by MOCVD: Preprint

    SciTech Connect

    Geisz, J. F.; Friedman, D. J.; Kurtz, S. R.; Olson, J. M.; Kramer, C.; Young, M.; Barber, G.; Swartzlander, A. B.; Reedy, R. C.; Norman, A. G.

    2001-10-01

    Presented at the 2001 NCPV Program Review Meeting: Comparison of use of TMB, TEB, and BF3 to diborane for MOCVD growth of BGaInAs. BGaInAs can potentially be used in strain-free high-efficiency III-V solar cells, but the growth of sufficiently high-quality epitaxial BGaInAs using diborane has proven difficult. We compare the use of alternative boron precursors (trimethylboron [TMB], triethylboron [TEB], and boron trifluoride [BF{sub 3}]) with diborane for the MOCVD growth of these boron-containing III-V alloys. We find that TMB and BF{sub 3} do not result in significant boron incorporation into GaAs. TEB does result in boron incorporation in a manner very similar to diborane. Both diborane and TEB incorporate more efficiently using triethylgallium (TEG) rather than trimethylgallium (TMG), making TEG a preferred source of gallium for BGaAs epitaxy. Using TEB together with TEG, a higher boron composition (x = 4%-7%) has been achieved than has been previously reported, but we are still unable to achieve high- quality BGaInAs with the correct composition for solar cell applications.

  9. Fabrication of GaN nanotubular material using MOCVD with an aluminium oxide membrane

    NASA Astrophysics Data System (ADS)

    Jung, Woo-Gwang; Jung, Se-Hyuck; Kung, Patrick; Razeghi, Manijeh

    2006-01-01

    GaN nanotubular material is fabricated with an aluminium oxide membrane in MOCVD. SEM, XRD, TEM and PL are employed to characterize the fabricated GaN nanotubular material. An aluminium oxide membrane with ordered nanoholes is used as a template. Gallium nitride is deposited at the inner wall of the nanoholes in the aluminium oxide template, and the nanotubular material with high aspect ratio is synthesized using the precursors of TMG and ammonia gas. Optimal synthesis conditions in MOCVD are obtained successfully for the gallium nitride nanotubular material in this research. The diameter of the GaN nanotube fabricated is approximately 200-250 nm and the wall thickness is about 40-50 nm. GaN nanotubular material consists of numerous fine GaN particulates with size range 15-30 nm. The composition of gallium nitride is confirmed to be stoichiometrically 1:1 for Ga and N by EDS. XRD and TEM analyses indicate that the grains in GaN nanotubular material have a nano-crystalline structure. No blue shift is found in the PL spectrum on the GaN nanotubular material fabricated in an aluminium oxide template.

  10. Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lee, In-Hwan; Polyakov, Alexander Y.; Smirnov, Nikolai B.; Yakimov, Eugene B.; Tarelkin, Sergey A.; Turutin, Andery V.; Shemerov, Ivan V.; Pearton, Stephen J.

    2016-06-01

    For a group of n-GaN films grown by metalorganic chemical vapor deposition (MOCVD) using both straight MOCVD and epitaxial lateral overgrowth techniques (ELOG proper or pendeo overgrowth), the spectra of deep traps were measured by deep-level transient spectroscopy (DLTS) with electrical or optical injection (ODLTS). The results were compared with diffusion length measurement results obtained from electron-beam-induced current experiments. The results strongly indicate that deep electron traps near E c - 0.56 eV could be the major recombination centers determining the diffusion length values in pendeo samples.

  11. Gamma radiation effects on some properties of YBCO

    NASA Astrophysics Data System (ADS)

    Luo, L.; Zhang, Y. H.; Hu, S. H.; Liu, W. H.; Zhang, G. L.; Hu, W. X.

    1991-07-01

    Radiation effects of polycrystalline YBCO bulk sample irradiated by 60Co γ-rays, dose of 1×10 6 up to 7.5×10 8 rad, at room temperature on critical temperature and critical current were investigated. IR spectrum was also used to study the mechanism of the irradiation. A considerably strong dependence of these parameters upon the irradiation dose was observed. No significant effects on the critical temperature were found, but the critical current in zero magnetic field changed greatly. It shows a tendency to decrease with the increase of the irradiation dose except for a slight increase with the dose less than about 2×10 7 rad and no simple relations between critical currents and irradiation doses was found. A typical case is that the critical current is reduced to about 60% when the dose reaches 5×10 9 rad, but the dependence of critical currents on the magnetic field shows that the critical currents are higher than those of the unirradiated one in the range of magnetic field higher than 100 G and decrease more slowly in a magnetic field compared with the unirradiated one. The results indicate that the defects produced by γ-ray irradiation are beneficial to flux pinning in higher fields. IR spectra analysis reveals that the intensity of the peak responsible for the Cu(1)- O(1) chain vibration is decreased, indicating that the bond of the Cu(1)-O(1) may be partly broken through collision process of the Compton electron produced by the γ-ray. This effect probably gives rise to a decrease of the critical currents.

  12. Growth and characterization of indium arsenide thin films

    NASA Astrophysics Data System (ADS)

    Partin, D. L.; Green, L.; Morelli, D. T.; Heremans, J.; Fuller, B. K.; Thrush, C. M.

    1991-12-01

    The growth and characterization of indium arsenide films grown on indium phosphide substrates by the metal organic chemical vapor deposition (MOCVD) process is reported. Either ethyl dimethyl indium or trimethyl indium were found to be suitable in combination with arsine as source compounds. The highest electron mobilities were observed in films nucleated at reduced growth temperature. Scanning electron microscopy studies show that film nucleation at low temperature prevents thermal etch pits from forming on the InP surface before growth proceeds at an elevated temperature. Electron mobilities as high as 21,000 cm2V-1 sec-1 at 300 K were thus obtained for a film only 3.4 μm thick. This mobility is significantly higher than was previously observed in InAs films grown by MOCVD. From the depth dependence of transport properties, we find that in our films electrons are accumulated near the air interface of the film, presumably by positive ions in the native oxide. The mobility is limited by electrons scattering predominantly from ionized impurities at low temperature and from lattice vibrations and dislocations at high temperature. However, scattering from dislocations is greatly reduced in the surface accumulation layer due to screening by a high density of electrons. These dislocations arise from lattice mismatch and interface disorder at the film-substrate interface, preventing these films from obtaining mobility values of bulk indium arsenide.

  13. Method of forming superconducting Tl-Ba-Ca-Cu-O films

    DOEpatents

    Wessels, Bruce W.; Marks, Tobin J.; Richeson, Darrin S.; Tonge, Lauren M.; Zhang, Jiming

    1993-01-01

    A method of forming a superconducting Tl-Ba-Ca-Cu-O film is disclosed, which comprises depositing a Ba-Ca-Cu-O film on a substrate by MOCVD, annealing the deposited film and heat-treating the annealed film in a closed circular vessel with TlBa.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x and cooling to form said superconducting film of TlO.sub.m Ba.sub.2 Ca.sub.n-1 Cu.sub.n O.sub.2n+2, wherein m=1,2 and n=1,2,3.

  14. Spin-polarized quasiparticle injection effect in MOCVD-grown YBa 2Cu 3O 7/SrTiO 3/La 1- xSr xMnO 3 heterostructures

    NASA Astrophysics Data System (ADS)

    Plausinaitiene, V.; Abrutis, A.; Vengalis, B.; Butkute, R.; Senateur, J. P.; Saltyte, Z.; Kubilius, V.

    2001-03-01

    Metal oxide heterostructures consisting of the ferromagnetic La 1- xSr xMnO 3 ( x≈0.3) underlayer, thin ( d≅5-10 nm) SrTiO 3 barrier layer and YBa 2Cu 3O 7 cap layer were grown on single crystal LaAlO 3 (1 0 0) substrates at 825°C under oxygen pressure of about 200 Pa by single source pulsed injection MOCVD method. The technological conditions were optimized in order to improve crystallinity and surface quality of the constituent layers. Wet etching was applied to form tape-like superconducting films for investigation of both longitudinal and transverse electrical transport in the heterostructures. Significant suppression of supercurrent has been found by injecting tunneling spin-polarized current from the underlying FM layer.

  15. MOCVD growth of N-polar GaN on on-axis sapphire substrate: Impact of AlN nucleation layer on GaN surface hillock density

    NASA Astrophysics Data System (ADS)

    Marini, Jonathan; Leathersich, Jeffrey; Mahaboob, Isra; Bulmer, John; Newman, Neil; (Shadi) Shahedipour-Sandvik, F.

    2016-05-01

    We report on the impact of growth conditions on surface hillock density of N-polar GaN grown on nominally on-axis (0001) sapphire substrate by metal organic chemical vapor deposition (MOCVD). Large reduction in hillock density was achieved by implementation of an optimized high temperature AlN nucleation layer and use of indium surfactant in GaN overgrowth. A reduction by more than a factor of five in hillock density from 1000 to 170 hillocks/cm-2 was achieved as a result. Crystal quality and surface morphology of the resultant GaN films were characterized by high resolution x-ray diffraction and atomic force microscopy and found to be relatively unaffected by the buffer conditions. It is also shown that the density of smaller surface features is unaffected by AlN buffer conditions.

  16. Dynamical effects of an unconventional current-phase relation in YBCO dc SQUIDs.

    PubMed

    Lindström, T; Charlebois, S A; Tzalenchuk, A Ya; Ivanov, Z; Amin, M H S; Zagoskin, A M

    2003-03-21

    The predominant d-wave pairing symmetry in high-temperature superconductors allows for a variety of current-phase relations in Josephson junctions, which is to a certain degree fabrication controlled. In this Letter, we report on direct experimental observations of the effects of a nonsinusoidal current-phase dependence in YBCO dc SQUIDs, which agree with the theoretical description of the system.

  17. Experimental studies of helical solenoid model based on YBCO tape-bridge joints

    SciTech Connect

    Yu, M.; Lombardo, V.; Turrioni, D.; Zlobin, A.V.; Flangan, G.; Lopes, M.L.; Johnson, R.P.; /Fermilab

    2011-06-01

    Helical solenoids that provide solenoid, helical dipole and helical gradient field components are designed for a helical cooling channel (HCC) proposed for cooling of muon beams in a muon collider. The high temperature superconductor (HTS), 12 mm wide and 0.1 mm thick YBCO tape, is used as the conductor for the highest-field section of HCC due to certain advantages, such as its electrical and mechanical properties. To study and address the design, and technological and performance issues related to magnets based on YBCO tapes, a short helical solenoid model based on double-pancake coils was designed, fabricated and tested at Fermilab. Splicing joints were made with Sn-Pb solder as the power leads and the connection between coils, which is the most critical element in the magnet that can limit the performance significantly. This paper summarizes the test results of YBCO tape and double-pancake coils in liquid nitrogen and liquid helium, and then focuses on the study of YBCO splices, including the soldering temperatures and pressures, and splice bending test.

  18. New method for introducing nanometer flux pinning centers into single domain YBCO bulk superconductors

    NASA Astrophysics Data System (ADS)

    Yang, W. M.; Wang, Miao

    2013-10-01

    Single domain YBCO superconductors with different additions of Bi2O3 have been fabricated by top seeded infiltration and growth process (TSIG). The effect of Bi2O3 additions on the growth morphology, microstructure and levitation force of the YBCO bulk superconductor has been investigated. The results indicate that single domain YBCO superconductors can be fabricated with the additions of Bi2O3 less than 2 wt%; Bi2O3 can be reacted with Y2BaCuO5 and liquid phase and finally form Y2Ba4CuBiOx(YBi2411) nanoscale particles; the size of the YBi2411 particles is about 100 nm, which can act as effective flux pinning centers. It is also found that the levitation force of single domain YBCO bulks is increasing from 13 N to 34 N and decreasing to 11 N with the increasing of Bi2O3 addition from 0.1 wt% to 0.7 wt% and 2 wt%. This result is helpful for us to improve the physical properties of REBCO bulk superconductors.

  19. A newly designed ultrasonic spray pyrolysis device to fabricate YBCO tapes

    NASA Astrophysics Data System (ADS)

    Liu, M.; Zhou, M. L.; Zhai, L. H.; Liu, D. M.; Gao, X.; Liu, W.

    2003-04-01

    A newly designed ultrasonic spray pyrolysis device has been manufactured to fabricate YBCO tapes. The apparatus is primarily composed of four zones: the ultrasonic generator, the atomization chamber, the pyrolysis chamber and the rotating equipment. Every part of them is designed and fabricated by us. The whole system costs far less than the ready-made equipment facility in which there is always a vacuum apparatus. This apparatus with processing parameters accurately controlled can fabricate short and long YBCO tapes. In this paper, we mainly focused on how to design and manufacture four parts of the ultrasonic spray pyrolysis. We have deposited c-axis aligned short YBCO tapes on biaxially textured Ag {1 1 0}<1 1 0> substrates with Jc=10 3 A/cm 2 using this method with our device. The method is very promising in terms of its precise control of metal compositions, high deposition rate and low cost non-vacuum approach. Improvements of this technique are being carried out to fabricate long YBCO tapes.

  20. Chemical vapor deposition of high T(sub c) superconducting films in a microgravity environment

    NASA Technical Reports Server (NTRS)

    Levy, Moises; Sarma, Bimal K.

    1994-01-01

    Since the discovery of the YBaCuO bulk materials in 1987, Metalorganic Chemical Vapor Deposition (MOCVD) has been proposed for preparing HTSC high T(sub c) films. This technique is now capable of producing high-T(sub c) superconducting thin films comparable in quality to those prepared by any other methods. The MOCVD technique has demonstrated its superior advantage in making large area high quality HTSC thin films and will play a major role in the advance of device applications of HTSC thin films. The organometallic precursors used in the MOCVD preparation of HTSC oxide thin films are most frequently metal beta-diketonates. High T(sub c) superconductors are multi-component oxides which require more than one component source, with each source, containing one kind of precursor. Because the volatility and stability of the precursors are strongly dependent on temperature, system pressure, and carrier gas flow rate, it has been difficult to control the gas phase composition, and hence film stoichiometry. In order circumvent these problems we have built and tested a single source MOCVD reactor in which a specially designed vaporizer was employed. This vaporizer can be used to volatilize a stoichiometric mixture of diketonates of yttrium, barium and copper to produce a mixed vapor in a 1:2:3 ratio respectively of the organometellics. This is accomplished even though the three compounds have significantly different volatilities. We have developed a model which provides insight into the process of vaporizing mixed precursors to produce high quality thin films of Y1Ba2Cu3O7. It shows that under steady state conditions the mixed organometallic vapor must have a stoichiometric ratio of the individual organometallics identical to that in the solid mixture.

  1. Deposition and characterization of high temperature superconducting YBa2Cu3O7-δ films obtained by DC magnetron sputtering and thermal annealing modification

    NASA Astrophysics Data System (ADS)

    Beshkova, M.; Blagoev, B.; Kovacheva, D.; Mladenov, G.; Nurgaliev, T.

    2008-05-01

    C-axis oriented 100-nm thick YBCO films were deposited on LaAlO3 (100) substrates at substrate temperature of 780°C in a mixed oxygen/argon atmosphere (1:3) of 0.3 Torr by DC off-axis magnetron sputtering. The samples deposited were thermally annealed in oxygen ambient of 600 Torr at 530°C for 40 min. Superconductivity with zero resistance 89.1K was observed for the YBCO films after annealing. These results show that thermal annealing is an important technique for improving the parameters of thin superconducting films. A correlation between the YBCO layers properties before and after annealing was established.

  2. Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics

    SciTech Connect

    Han, J.; Crawford, M.H.; Shul, R.J.; Hearne, S.J.; Chason, E.; Figiel, J.J.; Banas, M.

    1999-01-14

    The grown-in tensile strain, due to a lattice mismatch between AlGaN and GaN, is responsible for the observed cracking that seriously limits the feasibility of nitride-based ultraviolet (UV) emitters. We report in-situ monitoring of strain/stress during MOCVD of AlGaN based on a wafer-curvature measurement technique. The strain/stress measurement confirms the presence of tensile strain during growth of AlGaN pseudomorphically on a thick GaN layer. Further growth leads to the onset of stress relief through crack generation. We find that the growth of AlGaN directly on low-temperature (LT) GaN or AlN buffer layers results in a reduced and possibly controllable strain.

  3. Three-dimensional modelling of horizontal chemical vapor deposition. I - MOCVD at atmospheric pressure

    NASA Technical Reports Server (NTRS)

    Ouazzani, Jalil; Rosenberger, Franz

    1990-01-01

    A systematic numerical study of the MOCVD of GaAs from trimethylgallium and arsine in hydrogen or nitrogen carrier gas at atmospheric pressure is reported. Three-dimensional effects are explored for CVD reactors with large and small cross-sectional aspect ratios, and the effects on growth rate uniformity of tilting the susceptor are investigated for various input flow rates. It is found that, for light carrier gases, thermal diffusion must be included in the model. Buoyancy-driven three-dimensional flow effects can greatly influence the growth rate distribution through the reactor. The importance of the proper design of the lateral thermal boundary conditions for obtaining layers of uniform thickness is emphasized.

  4. Growth of AlN nanostructure on GaN using MOCVD

    SciTech Connect

    Loganathan, R.; Ramesh, R.; Jayasakthi, M.; Prabakaran, K.; Kuppulingam, B.; Sankaranarayanan, M.; Balaji, M.; Arivazhagan, P.; Singh, Subra; Baskar, K.

    2015-06-24

    Aluminum nitride (AlN) nanowalls have been epitaxially grown on dislocation assisted GaN/Al{sub 2}O{sub 3} template by metal organic chemical vapor deposition (MOCVD) without any help of metal catalysts. A large number of nanowalls with thicknesses of 1.5-2.0 µm and height 400 nm have been deposited. The AlN nanowalls were found to have a preferred c-axis oriented with a hexagonal crystal structure. The AlN nanowalls and GaN/Al{sub 2}O{sub 3} template have been characterize at room temperature photoluminescence (PL) and high resolution X-ray diffraction (HRXRD)

  5. Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaotian; Al Balushi, Zakaria Y.; Zhang, Fu; Choudhury, Tanushree H.; Eichfeld, Sarah M.; Alem, Nasim; Jackson, Thomas N.; Robinson, Joshua A.; Redwing, Joan M.

    2016-12-01

    Metalorganic chemical vapor deposition (MOCVD) is a promising technique to form large-area, uniform films of monolayer or few-layer transition metal dichalcogenide (TMD) thin films; however, unintentional carbon incorporation is a concern. In this work, we report the presence of a defective graphene layer that forms simultaneously during MOCVD growth of tungsten diselenide (WSe2) on sapphire at high growth temperature and high Se:W ratio when using tungsten hexacarbonyl (W(CO)6) and dimethyl selenide ((CH3)2Se, DMSe) as precursors. The graphene layer alters the surface energy of the substrate reducing the lateral growth and coalescence of WSe2 domains. The use of hydrogen selenide (H2Se) instead of DMSe eliminates the defective graphene layer enabling coalesced monolayer and few-layer WSe2 films.

  6. Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Nouhi, Akbar (Inventor); Stirn, Richard J. (Inventor)

    1990-01-01

    A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, wherein a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd.sub.1-x Mn.sub.x Te, wherein 0.ltoreq..times..ltoreq.0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) maganese (TCPMn) is employed. To prevent TCPMn condensation during the introduction thereof int the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, wherein the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.

  7. Large-area YBa2Cu3O(7-delta) thin films on sapphire for microwave applications

    NASA Technical Reports Server (NTRS)

    Cole, B. F.; Liang, G.-C.; Newman, N.; Char, K.; Zaharchuk, G.; Martens, J. S.

    1992-01-01

    We have deposited YBa2Cu3O(7-delta) (YBCO) films with low microwave surface resistance (Rs) on 5-cm-diam, oxide-buffered sapphire substrates by planar magnetron sputtering. MgO buffer layers are used on M-plane (1 0 -1 0) sapphire, and R-plane (1 -1 0 2) sapphire is buffered by CeO2. Rs values of 450-620 microhms at 77 K and 10 GHz were measured across an entire 5-cm diam YBCO film on M-plane sapphire. For YBCO on R-plane sapphire, Rs values at 77 K and 10 GHz were 950 microohms for a 5-cm-diam wafer and 700 microohms for 1 x 1 sq cm samples.

  8. Temperature-dependent growth of LaAlO3 films on YBa2CuO7 C-axis films for multilayer structures

    NASA Astrophysics Data System (ADS)

    Hawley, M. E.; Houlton, R. J.; Raistrick, I. A.; Garzon, F. H.

    Fabrication of ultra smooth films, free of micro-shorts, is essential to the development of High Temperature Superconducting (HTS) thin film devices. One such example is a SNS junction consisting of two HTS layers separated by a uniformly smooth continuous barrier material. Other schemes under consideration require multilayer structures of up to 5 - 7 epitaxially grown layers of complex oxide material. Successful fabrication of such devices necessitates understanding the epitaxial growth of polycrystalline oxide films on polycrystalline film templates. Toward this end we have developed a set of deposition parameters that produce high quality epitaxial insulating layers suitable for HTS device applications. All films in this study were grown by off-axis RF magnetron sputter deposition. LaAlO3 films were deposited over MgO grown YBa2Cu3O7 (YBCO) c-axis thin films at temperatures ranging from 200 to 700C and on virgin substrates at 600C. Atomic Force Microscopy, eddy current measurements, and x-ray diffraction techniques were used to monitor the effect of growth conditions on the resulting film crystallinity, nanostructure, and electrical properties. Ex-situ interrupted growth characterization of these materials has yielded new insight into the processes that control the growth mechanism and resulting microstructure. All films were polycrystalline. Below 600C, LaAlO3 films were not epitaxial while films grown at 650C showed some zone group axes(200) orientation. The shape of the underlying YBCO film is most clearly evident for the film grown at 400C. Surface roughness depended on the appearance of crystals on the film surface. The superconducting properties of the underlying YBCO film required O2 annealing prior to deposition of the LaAlO3 layer.

  9. High efficiency cadmium and zinc telluride-based thin film solar cells

    SciTech Connect

    Rohatgi, A.; Summers, C.J.; Erbil, A.; Sudharsanan, R.; Ringel, S. . School of Electrical Engineering)

    1990-10-01

    Polycrystalline Cd{sub 1-x}Zn{sub x}Te and Cd{sub 1-x}Mn{sub x}Te films with a band gap of 1.7 eV were successfully grown on glass/SnO{sub 2}/CdS substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), respectively. Polycrystalline Cd{sub 1-x}Zn{sub x}Te films grown by MBE resulted in uniform composition and sharp interfaces. However, polycrystalline Cd{sub 1-x}Mn{sub x}Te films grown by MOCVD showed nonuniform compositions and evidence of manganese accumulation at the Cd{sub 1-x}Mn{sub x}Te/CdS interface. We found that manganese interdiffuses and replaces cadmium in the CdS film. By improving the CdTe/CdS interface and, thus, reducing the collection function effects, the efficiency of the MOCVD CdTe cell can be improved to about 13.5%. MBE-grown CdTe cells also produced 8%--9% efficiencies. The standard CdTe process was not optimum for ternary films and resulted in a decrease in the band gap. Recent results indicate that CdCl{sub 2} + ZnCl{sub 2} chemical treatment may prevent the band-gap reduction, and that chromate etch (rather than bromine etch) may provide the solution to contact resistance in the ternary cells.

  10. Time Resolved Magneto-Optical Imaging in High Frequency AC Currents of YBa2Cu3O7-delta Thin Films (Postprint)

    DTIC Science & Technology

    2012-02-01

    resolved imaging, we use a Q-switched Nd:YLF diode-pumped solid-state laser which provides 100 -nsec short pulses at 527- nm wavelength. The pulse...dimensions of 10 mm × 5 mm [12]. The YBCO films are about 250- nm thick. The samples exhibit a critical transition temperature (Tc) of ~91 K, as determined by...of the magnetic flux density distribution in YBa2Cu3O7-δ ( YBCO ) thin film samples is studied in small steps of the phase of the applied AC current

  11. Time-Resolved Magneto-Optical Imaging of Y1Ba2Cu3O7-delta Thin Films in High-Frequency AC Current Regime (Postprint)

    DTIC Science & Technology

    2012-02-01

    pumped solid-state laser which provides 100 ns short pulses at 527 nm wavelength. The pulse repetition frequency (PRF) of the laser can be varied...substrate with typical dimensions of 10 mm × 5 mm [14]. The YBCO films are about 250 nm thick. The samples exhibit a critical transition temperature (Tc) of...evolution of the magnetic flux density distribution in YBa2Cu3O7−δ ( YBCO ) thin film samples is studied as a function of the phase of the applied AC current

  12. Effect of Al and Ca co-doping, in the presence of Te, in superconducting YBCO whiskers growth.

    PubMed

    Pascale, Lise; Truccato, Marco; Operti, Lorenza; Agostino, Angelo

    2016-10-01

    High-Tc superconducting cuprates (HTSC) such as YBa2Cu3O7 - x (YBCO) are promising candidates for solid-state THz applications based on stacks of intrinsic Josephson junctions (IJJs) with atomic thickness. In view of future exploitation of IJJs, high-quality superconducting YBCO tape-like single crystals (whiskers) have been synthesized from Ca-Al-doped precursors in the presence of Te. The main aim of this paper is to determine the importance of the simultaneous use of Al, Te and Ca in promoting YBCO whiskers growth with good superconducting properties (Tc = 79-84 K). Further, single-crystal X-ray diffraction (SC-XRD) refinements of tetragonal YBCO whiskers (P4/mmm) are reported to fill the literature lack of YBCO structure investigations. All the as-grown whiskers have also been investigated by means of X-ray powder diffraction (XRPD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). Our results demonstrate that the interplay of Ca, Te and Al elements is clearly necessary in order to obtain superconducting YBCO whiskers. The data obtained from SC-XRD analyses confirm the highly crystalline nature of the whiskers grown. Ca and Al enter the structure by replacing the Y and the octahedral coordinated Cu1 site, respectively, as in other similar orthorhombic compounds, while Te does not enter the structure of whiskers but its presence in the precursor is essential to the growth of the crystals.

  13. Temperature coefficients and radiation induced DLTS spectra of MOCVD grown n(+)p InP solar cells

    NASA Technical Reports Server (NTRS)

    Walters, Robert J.; Statler, Richard L.; Summers, Geoffrey P.

    1991-01-01

    The effects of temperature and radiation on n(+)p InP solar cells and mesa diodes grown by metallorganic chemical vapor deposition (MOCVD) were studied. It was shown that MOCVD is capable of consistently producing good quality InP solar cells with Eff greater than 19 percent which display excellent radiation resistance due to minority carrier injection and thermal annealing. It was also shown that universal predictions of InP device performance based on measurements of a small group of test samples can be expected to be quite accurate, and that the degradation of an InP device due to any incident particle spectrum should be predictable from a measurement following a single low energy proton irradiation.

  14. Aqueous Chemical Solution Deposition of Novel, Thick and Dense Lattice-Matched Single Buffer Layers Suitable for YBCO Coated Conductors: Preparation and Characterization

    PubMed Central

    Narayanan, Vyshnavi; Van Steenberge, Sigelinde; Lommens, Petra; Van Driessche, Isabel

    2012-01-01

    In this work we present the preparation and characterization of cerium doped lanthanum zirconate (LCZO) films and non-stoichiometric lanthanum zirconate (LZO) buffer layers on metallic Ni-5% W substrates using chemical solution deposition (CSD), starting from aqueous precursor solutions. La2Zr2O7 films doped with varying percentages of Ce at constant La concentration (La0.5CexZr1−xOy) were prepared as well as non-stoichiometric La0.5+xZr0.5−xOy buffer layers with different percentages of La and Zr ratios. The variation in the composition of these thin films enables the creation of novel buffer layers with tailored lattice parameters. This leads to different lattice mismatches with the YBa2Cu3O7−x (YBCO) superconducting layer on top and with the buffer layers or substrate underneath. This possibility of minimized lattice mismatch should allow the use of one single buffer layer instead of the current complicated buffer architectures such as Ni-(5% W)/LZO/LZO/CeO2. Here, single, crack-free LCZO and non-stoichiometric LZO layers with thicknesses of up to 140 nm could be obtained in one single CSD step. The crystallinity and microstructure of these layers were studied by XRD, and SEM and the effective buffer layer action was studied using XPS depth profiling.

  15. High Critical Current Density of YBa2Cu3O7‑x Superconducting Films Prepared through a DUV-assisted Solution Deposition Process

    NASA Astrophysics Data System (ADS)

    Chen, Yuanqing; Bian, Weibai; Huang, Wenhuan; Tang, Xinni; Zhao, Gaoyang; Li, Lingwei; Li, Na; Huo, Wen; Jia, Jiqiang; You, Caiyin

    2016-12-01

    Although the solution deposition of YBa2Cu3O7‑x (YBCO) superconducting films is cost effective and capable of large-scale production, further improvements in their superconductivity are necessary. In this study, a deep UV (DUV) irradiation technique combined with a low-fluorine solution process was developed to prepare YBCO films. An acrylic acidic group as the chelating agent was used in the precursor solution. The acrylic acidic group was highly sensitive to DUV light at 254 nm and significantly absorbed UV light. The coated gel films exposed to DUV light decomposed at 150 °C and copper aggregation was prevented. The UV irradiation promoted the removal of the carbon residue and other by-products in the films, increased the density and enhanced the crystallinity and superconductivity of the YBCO films. Using a solution with F/Ba = 2, YBCO films with thicknesses of 260 nm and enhanced critical current densities of nearly 8 MA/cm2 were produced on the LaAlO3 (LAO) substrates.

  16. High Critical Current Density of YBa2Cu3O7-x Superconducting Films Prepared through a DUV-assisted Solution Deposition Process.

    PubMed

    Chen, Yuanqing; Bian, Weibai; Huang, Wenhuan; Tang, Xinni; Zhao, Gaoyang; Li, Lingwei; Li, Na; Huo, Wen; Jia, Jiqiang; You, Caiyin

    2016-12-01

    Although the solution deposition of YBa2Cu3O7-x (YBCO) superconducting films is cost effective and capable of large-scale production, further improvements in their superconductivity are necessary. In this study, a deep UV (DUV) irradiation technique combined with a low-fluorine solution process was developed to prepare YBCO films. An acrylic acidic group as the chelating agent was used in the precursor solution. The acrylic acidic group was highly sensitive to DUV light at 254 nm and significantly absorbed UV light. The coated gel films exposed to DUV light decomposed at 150 °C and copper aggregation was prevented. The UV irradiation promoted the removal of the carbon residue and other by-products in the films, increased the density and enhanced the crystallinity and superconductivity of the YBCO films. Using a solution with F/Ba = 2, YBCO films with thicknesses of 260 nm and enhanced critical current densities of nearly 8 MA/cm(2) were produced on the LaAlO3 (LAO) substrates.

  17. High Critical Current Density of YBa2Cu3O7−x Superconducting Films Prepared through a DUV-assisted Solution Deposition Process

    PubMed Central

    Chen, Yuanqing; Bian, Weibai; Huang, Wenhuan; Tang, Xinni; Zhao, Gaoyang; Li, Lingwei; Li, Na; Huo, Wen; Jia, Jiqiang; You, Caiyin

    2016-01-01

    Although the solution deposition of YBa2Cu3O7−x (YBCO) superconducting films is cost effective and capable of large-scale production, further improvements in their superconductivity are necessary. In this study, a deep UV (DUV) irradiation technique combined with a low-fluorine solution process was developed to prepare YBCO films. An acrylic acidic group as the chelating agent was used in the precursor solution. The acrylic acidic group was highly sensitive to DUV light at 254 nm and significantly absorbed UV light. The coated gel films exposed to DUV light decomposed at 150 °C and copper aggregation was prevented. The UV irradiation promoted the removal of the carbon residue and other by-products in the films, increased the density and enhanced the crystallinity and superconductivity of the YBCO films. Using a solution with F/Ba = 2, YBCO films with thicknesses of 260 nm and enhanced critical current densities of nearly 8 MA/cm2 were produced on the LaAlO3 (LAO) substrates. PMID:27905544

  18. Feasibility of large-current capacity YBCO conductors with on-demand transposition

    NASA Astrophysics Data System (ADS)

    Yanagi, Nagato; Mito, Toshiyuki; Noguchi, Hiroki; Terazaki, Yoshiro; Tamura, Hitoshi; Iwakuma, Masataka; Aoki, Yuji; Izumi, Teruo; Shiohara, Yuh

    We propose a new idea for fabricating a large-current capacity YBCO conductor having a Roebel-type transposition formed by joining tapes. If the joule heating generated by joints is smaller than other heat sources, such as AC losses, this type of conductor may work as a quasi-superconductor. We note that the Roebel-type transposition can be included on demand in coil windings, not over the whole conductor length but rather locally, such as at terminals and coil edges to secure uniform current distribution among tapes. We fabricated a 1.2 m-long conductor sample based on this idea using 20 YBCO tapes. The Roebel-assembled tapes having joints with a 600-mm pitch length for meandering were imbedded in a copper jacket and soldered. The sample was tested in liquid nitrogen under the self magnetic field and the critical current was measured. The joint resistance was evaluated and compared with the expected value.

  19. Static Test for a Gravitational Force Coupled to Type 2 YBCO Superconductors

    NASA Technical Reports Server (NTRS)

    Li, Ning; Noever, David; Robertson, Tony; Koczor, Ron; Brantley, Whitt

    1997-01-01

    As a Bose condensate, superconductors provide novel conditions for revisiting previously proposed couplings between electromagnetism and gravity. Strong variations in Cooper pair density, large conductivity and low magnetic permeability define superconductive and degenerate condensates without the traditional density limits imposed by the Fermi energy (approx. 10(exp -6) g cc. Recent experiments have reported anomalous weight loss for a test mass suspended above a rotating type II, YBCO superconductor, with the percentage change (0.05 - 2.1 %) independent of the test mass' chemical composition and diamagnetic properties. A variation of 5 parts per 10' was reported above a stationary (non-rotating) superconductor. In experiments using a sensitive gravimeter, bulk YBCO superconductors were stably levitated in a DC magnetic field. Changes in acceleration were measured to be less than 2 parts in 108 of the normal gravitational acceleration. This result puts new limits on the strength and range of the proposed coupling between static superconductors and gravity.

  20. Study of microstructure and electrical properties of bulk YBCO prepared by melt textured growth technique

    SciTech Connect

    Gonal, M. R.; Krishnan, Madangopal; Tewari, R.; Tyagi, A. K.; Gyore, A.; Vajda, I.

    2015-06-24

    Bulk YBCO components were prepared using Melt Texture Growth (MTG) technique. Components were fabricated using MTG by addition of Y{sub 2}BaCuO{sub 5} (Y211) and Ag to YBCO, which leads to improved grain size without affecting superconducting properties. Green compacts prepared by cold isostatic pressing were pre-sintered at 930°C before subjecting melt texturing. Cooling rates lower than 1 °C.h{sup −1} was used, in between (peritectic) temperature of about 995 and 1025°C, to obtain large grained components. Microstructure studies in details were carried out by Scanning Electron Microscope (SEM), Electron Probe Micro Analysis (EPMA), Orientation Imaging Microscope (OIM) and TEM correlated with electrical properties like Critical current density (J{sub c})

  1. Fishtail Effect Due To Silver Influenced Sub-precipitate Microstructure in YBCO/Ag Superconducting Composites

    NASA Astrophysics Data System (ADS)

    Parthasarathy, R.; Kumar, N. Devendra; Bai, V. Seshu

    2011-07-01

    We report the existence of a sub-precipitate microstructure and the resulting fishtail effect in YBCO/Ag superconducting composites fabricated by Seeded Infiltration and Growth Processing. The SEM micrographs reveal sub-precipitate microstructure in the form of precipitates of size less than 100 nm within the larger non-superconducting Y-211 precipitates that contributes to the enhancement of Jc in the form of secondary peak effect at lower fields.

  2. CHEMICAL SOLUTION DEPOSITION BASED OXIDE BUFFERS AND YBCO COATED CONDUCTORS

    SciTech Connect

    Paranthaman, Mariappan Parans

    2011-01-01

    We have reviewed briefly the growth of buffer and high temperature superconducting oxide thin films using a chemical solution deposition (CSD) method. In the Rolling-Assisted Biaxially Textured Substrates (RABiTS) process, developed at Oak Ridge National Laboratory, utilizes the thermo mechanical processing to obtain the flexible, biaxially oriented copper, nickel or nickel-alloy substrates. Buffers and Rare Earth Barium Copper Oxide (REBCO) superconductors have been deposited epitaxially on the textured nickel alloy substrates. The starting substrate serves as a template for the REBCO layer, which has substantially fewer weak links. Buffer layers play a major role in fabricating the second generation REBCO wire technology. The main purpose of the buffer layers is to provide a smooth, continuous and chemically inert surface for the growth of the REBCO film, while transferring the texture from the substrate to the superconductor layer. To achieve this, the buffer layers need to be epitaxial to the substrate, i.e. they have to nucleate and grow in the same bi-axial texture provided by the textured metal foil. The most commonly used RABiTS multi-layer architectures consist of a starting template of biaxially textured Ni-5 at.% W (Ni-W) substrate with a seed (first) layer of Yttrium Oxide (Y2O3), a barrier (second) layer of Yttria Stabilized Zirconia (YSZ), and a Cerium Oxide (CeO2) cap (third) layer. These three buffer layers are generally deposited using physical vapor deposition (PVD) techniques such as reactive sputtering. On top of the PVD template, REBCO film is then grown by a chemical solution deposition. This article reviews in detail about the list of oxide buffers and superconductor REBCO films grown epitaxially on single crystal and/or biaxially textured Ni-W substrates using a CSD method.

  3. Growth of Highly Epitaxial YBa2Cu3O(7-δ) Films from a Simple Propionate-Based Solution.

    PubMed

    Zhao, Yue; Torres, Pol; Tang, Xiao; Norby, Poul; Grivel, Jean-Claude

    2015-11-02

    Intensive investigations have been conducted to develop epitaxial oxide thin films with superior electromagnetic performance by low-cost chemical solution deposition routes. In this paper, a novel propionate-based precursor solution without involving any other additive was proposed and employed to grow superconducting YBa2Cu3O(7-δ) (YBCO) films on LaAlO3 (LAO) single crystals. The precursor solutions are stable with a long shelf life of up to several months. Since the primary compositions are propionates after evaporating the solvent, the toxic reagents and evolved gases during solution synthesis and heat treatment can be eliminated completely. In this process, rapid pyrolysis and high conversation rate can also be achieved during growth of YBCO films in comparison with the conventional trifluoroacetate metal organic deposition routes. Remarkably, a 210 nm YBCO film exhibits high superconducting performance with a Jc value of 3.7 MA/cm(2) at 77 K, self-field. Nucleation and growth behaviors in the chemical solution process have also been studied. It is revealed that the amount of liquid phase (Ba-Cu-O) is sufficient through the entire thickness within a very short time at high growth temperatures, which results in pronounced densification and fast conversion of the YBCO phase.

  4. Effect of Au nano-particles doping on polycrystalline YBCO high temperature superconductor

    NASA Astrophysics Data System (ADS)

    Dadras, Sedigheh; Gharehgazloo, Zahra

    2016-07-01

    In this research, we prepared different Au nanoparticles (0.1-2 wt%) doped YBCO high temperature superconductor samples by sol-gel method. To characterize the samples, we used X-Ray diffraction (XRD) and scanning electron microscope (SEM) analysis. Results show the formation of orthorhombic phase of superconductivity for all prepared samples. We observed that by adding Au nanoparticles, the grains' size of the samples reduces from 76 nm to 47 nm as well. The critical current density (Jc) and transition temperature (Tc) were determined using current versus voltage (I-V) and resistivity versus temperature (ρ-T) measurements, respectively. We found that by increasing Au nanoparticles in the compound, in comparison to the pure YBCO sample, the transition temperature, pinning energy and critical current density will increase. Also, the highest Jc is for 1 wt% Au doped YBCO compound that its critical current density is about 8 times more than the Jc of pure one in 0.7 T magnetic field.

  5. Field Performance of an Optimized Stack of YBCO Square "Annuli" for a Compact NMR Magnet.

    PubMed

    Hahn, Seungyong; Voccio, John; Bermond, Stéphane; Park, Dong-Keun; Bascuñán, Juan; Kim, Seok-Beom; Masaru, Tomita; Iwasa, Yukikazu

    2011-06-01

    The spatial field homogeneity and time stability of a trapped field generated by a stack of YBCO square plates with a center hole (square "annuli") was investigated. By optimizing stacking of magnetized square annuli, we aim to construct a compact NMR magnet. The stacked magnet consists of 750 thin YBCO plates, each 40-mm square and 80- μm thick with a 25-mm bore, and has a Ø10 mm room-temperature access for NMR measurement. To improve spatial field homogeneity of the 750-plate stack (YP750) a three-step optimization was performed: 1) statistical selection of best plates from supply plates; 2) field homogeneity measurement of multi-plate modules; and 3) optimal assembly of the modules to maximize field homogeneity. In this paper, we present analytical and experimental results of field homogeneity and temporal stability at 77 K, performed on YP750 and those of a hybrid stack, YPB750, in which two YBCO bulk annuli, each Ø46 mm and 16-mm thick with a 25-mm bore, are added to YP750, one at the top and the other at the bottom.

  6. Ultrasonic signatures at the superconducting and the pseudogap phase boundaries in YBCO cuprates.

    SciTech Connect

    Shehter, Arkady; Migliori, Albert; Betts, Jonathan B.; Balakirev, Fedor F.; McDonald, Ross David; Riggs, Scott C.; Ramshaw, Brad; Liang, Ruixing; Hardy, Walter N.; Bonn, Doug A.

    2012-08-28

    A major issue in the understanding of cuprate superconductors is the nature of the metallic state from which high temperature superconductivity emerges. Central to this issue is the pseudogap region of the doping-temperature phase diagram that extends from room temperature to the superconducting transition. Although polarized neutron scattering studies hint at magnetic order associated with the pseudogap, there is no clear thermodynamic evidence for a phase boundary. Such evidence has a straightforward physical interpretation, however, it is difficult to obtain over a temperature range wide enough to encompass both the pseudogap and superconducting phases. We address this by measuring the elastic response of detwinned single crystals, an underdoped YBCO{sub 6.60} with superconducting transition at T{sub c} = 61.6K and a slightly overdoped YBCO{sub 6.98} with T{sub c} = 88.0K. We observe a discontinuity in the elastic moduli across the superconducting transition. Its magnitude requires that pair formation is coincident with superconducting coherence (the onset of the Meissner effect). For both crystals the elastic response reveals a phase transition at the pseudogap boundary. In slightly overdoped YBCO that transition is 20K below T{sub c}, extending the pseudogap phase boundary inside the superconducting dome. This supports a description of the metallic state in cuprates where a pseudogap phase boundary evolves into a quantum critical point masked by the superconducting dome.

  7. Flux pinning by Al-based nanoparticles embedded in YBCO: A transmission electron microscopic study

    NASA Astrophysics Data System (ADS)

    Ben Azzouz, F.; Zouaoui, M.; Mellekh, A.; Annabi, M.; Van Tendeloo, G.; Ben Salem, M.

    2007-05-01

    A series of YBa2Cu3Oy (YBCO) samples with small amounts (0-0.6 wt.%) of nanosized alumina particles (50 nm) are synthesized in air by solid state reaction. The microstructure has been characterized by transmission electron microscopy (TEM) and the critical current density Jc has been measured by the standard four-probe method in the applied magnetic field at 77 K. TEM and energy dispersive X-ray spectroscopy (EDS) analysis have shown that alumina reacts with the YBCO matrix to form nanometric aluminium-rich inhomogeneities intergrown within the YBCO superconducting matrix. These inhomogeneities reduce the onset transition temperature Tconset and the zero resistance temperature Tc. In spite of the monotonic decrease of the superconducting temperature Tc with increasing alumina addition, the Jc(H) behaviour is remarkably improved. The characteristic behaviour of Jc can be explained in terms of the counterbalance of two effects simultaneously caused by the nanometric alumina addition in the system. One effect is the formation of the Al-rich nanometric inhomogeneities relevant for the flux pinning, and the other effect is the reduction of matrix superconducting volume, which is reflected by a decrease of the critical current density Jc at zero applied magnetic field.

  8. Bulk YBCO seeded with 45°-45° bridge-seeds of different lengths

    NASA Astrophysics Data System (ADS)

    Shi, Y.-H.; Durrell, J. H.; Dennis, A. R.; Cardwell, D. A.

    2013-01-01

    Single grain, (RE)BCO (rare earth-barium-copper oxide) bulk superconductors in large or complicated geometries are required for a variety of potential applications, such as in motors and generators and magnetic shielding devices. As a result, top, multi-seeded, melt growth has been investigated over the past 15 years in an attempt to enlarge the size of (RE)BCO single grains specifically for such applications. Of these multi-seeding techniques, so-called bridge-seeding provides the best alignment of two seeds in a single grain growth process. Here we report, for the first time, the successful growth of YBCO (yttrium-barium-copper oxide) using a special, 45°-45°, arrangement of bridge-seeds. The superconducting properties, including trapped field, of the multi-seeded YBCO grains have been measured for different bridge lengths of the 45°-45° bridge-seeds. The boundaries at the impinging growth front and the growth features of the top, multi-seeded surface and cross-section of the multi-seeded, samples have been analysed using optical microscopy. The results suggest that an impurity-free boundary between the two seeds of each leg of the bridge-seed can form when 45°-45° bridge-seeds are used to enlarge the size of YBCO grains.

  9. Iron-YBCO heterostructures and their application for trapped field superconducting motor

    NASA Astrophysics Data System (ADS)

    Granados, X.; Bartolomé, E.; Obradors, X.; Tornes, M.; Rodrigues, L.; Gawalek, W.; McCulloch, M.; Dew Hughes, D.; Campbell, A.; Coombs, T.; Ausloos, M.; Cloots, R.

    2006-06-01

    In this work we report on the magnetic behavior of the heterostructures formed by bulk based YBCO rings and ferromagnetic yoke. The magnetization cycle has been performed by an In-Field Hall Mapping technique. A video-like recording of the magnetization process makes it possible to obtain the magnetization of selected areas. The current flowing through the superconducting rings can be deduced from the magnetic field maps. The displacement of the peak of magnetization due to the flux reversal produced by the magnetization of the yoke is also considered. These hybrid heterostructures formed by ferromagnetic and superconducting material have been applied in the construction of the rotor for a brushless AC motor. The design and construction of this machine was carried out within the framework of the TMR Network SUPERMACHINES. The rotor has been designed in a quadrupolar configuration by cutting large YBCO ''window frames'' from seeded melt-textured single domain YBCO pellets. This rotor has been coupled to a conventional stator of copper coils wound on an iron armature. The stator can be excited both in bipolar or quadrupolar mode. We report on the behaviour of the motor after a field cooling process when excited in quadrupolar mode.

  10. Effect of Hydrogen in Zinc Oxide Thin-Film Transistor Grown by Metal Organic Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Jo, Jungyol; Seo, Ogweon; Jeong, Euihyuk; Seo, Hyunseok; Lee, Byeongon; Choi, Yearn-Ik

    2007-04-01

    We studied the transport characteristics of ZnO grown by metal organic chemical vapor deposition (MOCVD) at temperatures between 200 and 500 °C. The crystal quality, measured by X-ray diffraction, improved as the growth temperature increased. However, the mobility measured in the thin-film transistor (TFT) decreased in films grown at higher temperatures. In our experiments, a ZnO TFT grown at 250 °C showed good electrical characteristics, with a 13 cm2 V-1 s-1 mobility and a 103 on/off ratio. We conclude that hydrogen incorporated during MOCVD growth plays an important role in determining the transistor characteristics. This was supported by results of secondary ion mass spectroscopy (SIMS), where a higher hydrogen concentration was observed in films grown at lower temperatures.

  11. An all chemical solution deposition approach for the growth of highly textured CeO2 cap layers on La2Zr2O7-buffered long lengths of biaxially textured Ni W substrates for YBCO-coated conductors

    NASA Astrophysics Data System (ADS)

    Engel, S.; Knoth, K.; Hühne, R.; Schultz, L.; Holzapfel, B.

    2005-10-01

    A reel-to-reel, dip coating process has been developed to continuously deposit epitaxial La2Zr2O7 (LZO) and CeO2 on 5 m long cube-textured {100} (001)Ni tapes. Recent results for La2Zr2O7 and CeO2 buffer layers deposited on long lengths of Ni substrate for the realization of YBa2Cu3O7-x (YBCO)-coated conductors are presented. The major achievement is the development of a new all chemical solution deposition (CSD) process leading to the formation of highly textured buffer layers at moderate annealing temperatures. Reproducible highly textured, dense and crack-free LZO buffer layers and CeO2 cap layers were obtained for annealing temperatures as low as 900 °C in a reducing atmosphere (Ar-5 at.%-H2). The thickness of the LZO buffer layers was determined to be (200 ± 10) nm per single coating; prepared cerium oxide layers showed a thickness of 60 nm ± 10 nm. Pulsed laser deposition (PLD) was used to grow YBCO films on these substrates. A Tc 0 of T = 90.5 K and ΔTc = 1.4 K was obtained on PLD-YBCO/CSD-CeO2 /CSD-LZO/Ni-5 at.% W, which shows the outstanding features of this new buffer layer architecture processed by CSD. The large layer thickness combined with low annealing temperatures is the main advantage of this new process for low-cost buffer layer deposition on Ni-RABiTS (rolling-assisted biaxially textured substrates).

  12. Pulsed Laser Deposition of High Tc Superconducting Thin Films

    DTIC Science & Technology

    1992-04-15

    de- temperature thermal detectors such as the pyroelectric ec sign of imaging arrays of high-T, bolometers for wave- tector, the thermopile , or the... concepts to discuss materials and fabrication considerations. The thermal con- the sensitivity of imaging arrays of high-T, bolometers as a ductance G to...any conceived IR detector . In addition, flux motion studies have been made by this group using our films of YBCO grown on 0.003" thick silicon wafers

  13. Strongly enhanced flux pinning in the YBa2Cu3O7 -x films with the co-doping of BaTiO3 nanorod and Y2O3 nanoparticles at 65 K

    NASA Astrophysics Data System (ADS)

    Wang, Hong-Yan; Ding, Fa-Zhu; Gu, Hong-Wei; Zhang, Teng

    2015-09-01

    YBa2Cu3O7 - x (YBCO) films with co-doping BaTiO3 (BTO) and Y2O3 nanostructures were prepared by metal organic deposition using trifluoroacetates (TFA-MOD). The properties of the BTO/Y2O3 co-doped YBCO films with different excess yttrium have been systematically studied by x-ray diffraction (XRD), Raman spectra, and scanning electron microscope (SEM). The optimized content of yttrium excess in the BTO/Y2O3 co-doped YBCO films is 10 mol.%, and the critical current density is as high as ˜17 mA/cm2 (self-field, 65 K) by the magnetic signal. In addition, the Y2Cu2O5 was formed when the content of yttrium excess increases to 24 mol.%, which may result in the deterioration of the superconducting properties and the microstructure. The unique combination of the different types of nanostructures of BTO and Y2O3 in the doped YBCO films, compared with the pure YBCO films and BTO doped YBCO films, enhances the critical current density (JC) not only at the self-magnetic field, but also in the applied magnetic field. Project supported by the National Natural Science Foundation of China (Grant No. 51272250), the National Basic Research Program of China (Grant No. 2011CBA00105), the National High Technology Research and Development Program of China (Grant No. 2014AA032702), and the Natural Science Foundation of Beijing, China (Grant No. 2152035).

  14. Fluctuation-induced anisotropic magnetoconductivity in oxygen-deficient YBa 2Cu 3O 7-δthin films

    NASA Astrophysics Data System (ADS)

    Göb, W.; Lang, W.; Kula, W.; Sobolewski, Roman

    1997-04-01

    We report on measurements of both the longitudinal and transverse magnetoresistivity (MR) of oxygen-reduced YBa2Cu3O7-δ(YBCO) thin films with critical temperatures betweenTc = 55 K andTc = 89 . We find the MR solely caused by the suppression of superconducting fluctuations by a magnetic field. In fully oxygenated samples both the Aslamazov-Larkin process (AL) and another, presumably the Maki-Thompson process (MT), contribute to the MR. In oxygen-deficient samples the MT process unambiguously is absent, thus indicating an unconventional (non-s-wave) pairing symmetry in YBCO.

  15. Influence of film thickness in THz active metamaterial devices: A comparison between superconductor and metal split-ring resonators

    NASA Astrophysics Data System (ADS)

    Singh, Ranjan; Roy Chowdhury, Dibakar; Xiong, Jie; Yang, Hao; Azad, Abul K.; Taylor, Antoinette J.; Jia, Q. X.; Chen, Hou-Tong

    2013-08-01

    We experimentally demonstrate thickness-dependent resonance tuning in planar terahertz superconducting metamaterials. Inductive-capacitive resonance of arrays of split-ring resonators fabricated from 50, 100, and 200 nm thick YBa2Cu3O7-δ (YBCO) and gold films were characterized and compared as a function of temperature. In the YBCO metamaterials the resonance frequency strongly depends on the thickness, and they show high thermal tunability in both resonance strength and frequency below the superconducting transition temperature, where the imaginary conductivity varies by three orders of magnitude. In contrast, the resonance in the gold metamaterials exhibits little thickness-dependence and very small tunability.

  16. [The influential factors of MOCVD growth of InP in opals].

    PubMed

    Tan, Chun-hua; Fan, Guang-han; Huang, Xu-guang

    2008-12-01

    The key problem of fabricating the 3-D InP inverse opal photonic crystal is to increase the loading of InP in opals. In the present paper, low-pressure metal-organic chemical-vapour deposition (MOCVD) was used to infill the voids within synthetic opals with InP. The morphologies and optical properties of SiO2-InP photonic crystal were characterized by scanning electron microscopy and ultraviolet-visible spectrophotometry (UV-Vis). Several series of experiments were carried out in order to analyze the factors that influence the loading of InP in opals and determine the optimal InP growth conditions. The results of optical experiments are in good agreement with those derived from the theoretical considerations: By increasing the extent of InP infilling within the voids, the extent of refractive index contrast between the silica spheres and the void as well as the extent of natural optical properties change of the photonic crystal were increased. Cycle growth, low-pressure growth, and using the match substrate and the same configuration character between SiOi and InP are beneficial to increaseing the extent of InP infilling within the opal voids. The process has been optimized to achieve SiO2-InP photonic crystal with higher loading of InP. The study provides a scientific basis for manufacturing three-dimensional InP inverse opal photonic crystals.

  17. DC characteristics improvement of recessed gate GaN-based HFETs grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Cheng, A. T.; Su, Y. K.; Lai, W. C.; Huang, C. H.

    2007-01-01

    The effect of the recessed gate structure on DC characteristics of n-channel depletion mode heterostructure field effect transistors (HFETs) grown by metalorganic chemical vapor deposition (MOCVD) was demonstrated. The recessed gate process was carried out by using photo-enhanced chemical (PEC) wet etching. There were improvements on the electrical characteristics after using the recessed gate AlGaN/GaN and AlGaN/GaN/InGaN/GaN HFET structures because of the better gate controllability to the drain current. It was also found that the gate voltage, VGS, of the transconductance peak value shifted toward positive bias for the recessed gate structure. The leakage current, the transconductance ( Gm) and the saturation current of the recessed gate AlGaN/GaN/InGaN/GaN HFET with a 30-nm-thick Si-doped GaN cap layer are 1.95 mA/mm, 94.82 mA/mm and 230 mA/mm, respectively. This performance is quite better than that of the device with no recessed gate structure.

  18. EFFECTS OF Au ON THE GROWTH OF ZnO NANOSTRUCTURES ON Si BY MOCVD

    NASA Astrophysics Data System (ADS)

    Cong, Chen; Fan, Lu Yang; Ping, He Hai; Wei, Wu Ke; Zhen, Ye Zhi

    2013-06-01

    The effects of Au on the growth of ZnO nanostructures on Si by metal organic chemical vapor deposition (MOCVD) at a relatively low temperature (450°C) were investigated. The experimental results showed that Au nanoparticles played a critical role during the growth of the ZnO nanostructures and affected their morphology and optical properties. It was found that Au nanoparticles particularly affected the nucleation of ZnO nanostructures during the growth process and the Au-assisted growth mechanism of ZnO nanostructures should be ascribed to the vapor-solid (VS) mechanism. The formation of a nanoneedle may be attributed to a more reactive interface between Au and ZnO, which leads to more zinc gaseous species absorbed near the interface. Different nucleation sites on ZnO nuclei resulted in the disorder of ZnO nanoneedles. Moreover, the crystalline quality of nano-ZnO was improved due to the presence of Au, according to the smaller full width at half maximum (FWHM) of the low-temperature exciton emission. We confirmed that ZnO nanoneedles showed better crystalline quality than ZnO nanorods through the HRTEM images and the SAED patterns. The reason for the improvement of the crystalline quality of nano-ZnO may be due to the less lattice mismatch.

  19. Influence of AlN thickness on AlGaN epilayer grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Jayasakthi, M.; Juillaguet, S.; Peyre, H.; Konczewicz, L.; Baskar, K.; Contreras, S.

    2016-10-01

    AlGaN/AlN layers were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The AlN buffer thickness was varied from 400 nm to 800 nm. The AlGaN layer thickness was 1000 nm. The crystalline quality, thickness and composition of AlGaN were determined using high resolution X-ray diffraction (HRXRD). The threading dislocation density (TDD) was found to decrease with increase of AlN layer thickness. Reciprocal space mapping (RSM) was used to estimate the strain and relaxation between AlGaN and AlN. The optical properties of AlGaN layers were investigated by temperature dependent photoluminescence (PL). PL intensities of AlGaN layers increases with increasing the AlN thickness. The surface morphology of AlGaN was studied by atomic force microscopy (AFM). Root mean square (RMS) roughness values were found to be decreased while increase of AlN thickness.

  20. Process control of MOCVD growth for LEDs by in-situ photoluminescence

    NASA Astrophysics Data System (ADS)

    Prall, C.; Haberland, K.; Kaspari, C.; Brunner, F.; Weyers, M.; Rueter, D.

    2016-03-01

    Development and manufacturing of LED structures is still driven by production cost reduction and performance improvements. Therefore, in-situ monitoring during the epitaxial process plays a key role in view of further yield improvement and process optimization. With the continuing trend towards larger wafers, stronger bow and increased aspherical curvature are additional challenges the growers have to face, leading to non-uniform LED-emission. Compared to traditional in-situ metrology like curvature measurement and near UV pyrometry, in-situ photoluminescence measurements can provide a more direct access to the quantum well emission already during growth. In this paper we show how in-situ photoluminescence measurements can be used in a production type multi-wafer MOCVD system to characterize the quantum well emission already during growth. We also demonstrate how deviations from the desired wavelength can be detected and corrected in the same growth run. Since the method is providing spatially resolved line-scans across the wafer, also the uniformity of the emission wavelength can be characterized already during growth. Comparison of in-situ and ex-situ photoluminescence data show excellent agreement with respect to wavelength uniformity on 4 inch wafers.

  1. Studies on the effect of ammonia flow rate induced defects in gallium nitride grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Suresh, S.; Lourdudoss, S.; Landgren, G.; Baskar, K.

    2010-10-01

    Gallium nitride (GaN) epitaxial layers were grown with different V/III ratios by varying the ammonia (NH 3) flow rate, keeping the flow rate of the other precursor, trimethylgallium (TMG), constant, in an MOCVD system. X-ray rocking curve widths of a (1 0 2) reflection increase with an increase in V/III ratio while the (0 0 2) rocking curve widths decrease. The dislocation density was found to increase with an increase in ammonia flow rate, as determined by hot-wet chemical etching and atomic force microscopy. 77 K photoluminescence studies show near band emission at 3.49 eV and yellow luminescence peaking at 2.2 eV. The yellow luminescence (YL) intensity decreases with an increase in V/III ratio. Positron annihilation spectroscopy studies show that the concentration of Ga-like vacancies increases with an increase in ammonia flow rate. This study confirms that the yellow luminescence in the GaN arises due to deep levels formed by gallium vacancies decorated with oxygen atoms.

  2. The controlled growth of GaN microrods on Si(111) substrates by MOCVD

    NASA Astrophysics Data System (ADS)

    Foltynski, Bartosz; Garro, Nuria; Vallo, Martin; Finken, Matthias; Giesen, Christoph; Kalisch, Holger; Vescan, Andrei; Cantarero, Andrés; Heuken, Michael

    2015-03-01

    In this paper, a selective area growth (SAG) approach for growing GaN microrods on patterned SiNx/Si(111) substrates by metal-organic chemical vapor deposition (MOCVD) is studied. The surface morphology, optical and structural properties of vertical GaN microrods terminated by pyramidal shaped facets (six { 10 1 bar 1} planes) were characterized using scanning electron microscopy (SEM), room temperature photoluminescence (PL) and Raman spectroscopy, respectively. Measurements revealed high-quality GaN microcolumns grown with silane support. Characterized structures were grown nearly strain-free (central frequency of Raman peak of 567±1 cm-1) with crystal quality comparable to bulk crystals (FWHM=4.2±1 cm-1). Such GaN microrods might be used as a next-generation device concept for solid-state lighting (SSL) applications by realizing core-shell InGaN/GaN multi-quantum wells (MQWs) on the n-GaN rod base.

  3. Thin films of InP for photovoltaic energy conversion. Final report, July 5, 1979-July 4, 1980

    SciTech Connect

    Manasevit, H. M.; Ruth, R. P.; Moudy, L. A.; Yang, J. J.J.; Johnson, R. E.

    1980-08-01

    Research to develop a low-cost high-efficiency thin-film InP heterojunction solar cell, using the metalorganic chemical vapor deposition (MO-CVD) technique for InP film growth on suitable substrates is reported. Heterostructure devices of CdS/InP, using InP films prepared by CO-CVD, were prepared and characterized. The research effort involved three major technical tasks: (1) materials growth; (2) materials characterization; and (3) device fabrication and characterization. The principal results achieved in the investigations are as follows: (1) temperature-activated orientation-dependent background donor doping was observed in undoped epitaxial InP films; (2) p-type epitaxial InP films were prepared by Zn and by Cd doping during growth; (3) the efficacy of Cd doping was found to vary exponentially with the reciprocal of the deposition temperature in the range 650 to 730/sup 0/C; (4) Cd doping appeared to offer no clear advantages over Zn doping for preparation of p-type InP by the MO-CVD process; (5) GaP grown by MO-CVD was investigated as a possible intermediate-layer material for growth of InP films on low-cost substrates; (6) p/sup +/GaAs polycrystalline layers (p > /sup 19/ cm/sup -3/) were successfully prepared by Zn doping during MO-CVD growth on various low-cost substrates and used as surfaces for growth of p-type polycrystalline InP:Zn layers; (7) nCdS/pInP heterojunction solar cells were prepared by vacuum deposition of CdS onto p-type InP films grown by MO-CVD as well as on InP single-crystal wafers; (8) the best polycrystalline CdS/InP cells were obtained in structures on P/sup +/GaAs:Zn layers on both Mo sheet and Corning Code 0317 Glass; and (9) structure analyses of the Cds films used in the heterojunction cells indicated the presence of polycrystalline hexagonal CdS even in films grown on single-crystal InP films or bulk-wafer substrates. (WHK)

  4. Effect of deposition conditions on YBa 2Cu 3O 7- δ thin films by inverted cylindrical magnetron sputtering and substrate effects

    NASA Astrophysics Data System (ADS)

    Avci, İlbeyi; Tepe, Mustafa; Abukay, Doğan

    2004-05-01

    The dependence of YBCO thin film properties on the deposition conditions was studied for different substrates. The deposition conditions were optimized for the epitaxial growth of high quality YBCO thin films of 1500 Å thickness onto single crystal (100-oriented) SrTiO 3 (STO), MgO and LaAlO 3 (LAO) substrates by DC Inverted Cylindrical Magnetron Sputtering (ICMS). The samples were investigated in detail by means of X-ray diffraction analysis (XRD), EDX, AFM, ρ- T, magnetic susceptibility and current-voltage ( I- V) characterizations. The samples show strong diamagnetic behavior and sharp transition temperatures of 89-91 K with Δ T<0.5 K. XRD of the samples exhibited highly c-axis orientation. The full width at half maximum (FWHM) values of the rocking curves were ranging typically from 0.22 to 0.28°. The samples have smooth surfaces as shown from AFM micrographs. The surface roughness, Ra, changed between 5-7 nm. I- V characteristics were obtained from the 20 μm-wide microbridges, which were patterned by a laser writing technique. The critical current densities ( Jc, 1.06×10 6 for LAO-based YBCO, 1.39×10 6 for MgO-based YBCO, 1.67×10 6 A/cm 2 for STO based YBCO) of the microbridges were evaluated from I- V curves at 77 K.

  5. High index of refraction films for dielectric mirrors prepared by metal-organic chemical vapor deposition

    SciTech Connect

    Brusasco, R.M.

    1989-01-01

    A wide variety of metal oxides with high index of refraction can be prepared by Metal-Organic Chemical Vapor Deposition. We present some recent optical and laser damage results on oxide films prepared by MOCVD which could be used in a multilayer structure for highly reflecting (HR) dielectric mirror applications. The method of preparation affects both optical properties and laser damage threshold. 10 refs., 8 figs., 4 tabs.

  6. SM and ND Substiturions in YBCO Films Produced through Metal Organic Deposition (Postprint)

    DTIC Science & Technology

    2012-02-01

    Carpenter, P . Klenk, and P.N. Barnes Mechanical Energy Conversion Branch Energy/Power/Thermal Division H. Fang University of Houston C.V... P . Klenk, and P.N. Barnes (AFRL/RZPG) H. Fang (University of Houston) C.V. Varanasi (University of Dayton Research Institute) 5d. PROJECT NUMBER...THROUGH METAL ORGANIC DEPOSITION ABSTRACT B.C. Harrison\\ H. Fang2 , J. Carpenter\\ P . Klenk1, C. V. Varanasi3, P . N. Barnes1 1 Air Force Research

  7. Low-cost Approaches for Flux-pinning Enhancements in YBCO Films Using Solution Processing

    SciTech Connect

    Sathyamurthy, Srivatsan; Leonard, Keith J; Bhuiyan, Md S; Aytug, Tolga; Kang, Sukill; Martin, Patrick M; Hunt, Rodney Dale; Paranthaman, Mariappan Parans

    2007-01-01

    Nanoparticles of several oxides have been synthesized using reverse micelle process. Microemulsions containing n-octane as the oil phase, cetyl trimethylammonium bromide and 1-butanol as surfactants, and an aqueous solution of metal nitrates and sodium hydroxide were used as the reaction medium. The nanoparticles obtained were characterized using differential thermal analysis, x-ray diffraction, and transmission electron microscopy. The application of these particles for flux-pinning enhancements has been studied.

  8. Effect of inductors to mitigate the hot-spot problem in parallel-connected superconducting thin-film fault current limiting elements

    NASA Astrophysics Data System (ADS)

    Yamasaki, H.; Furuse, M.; Kaiho, K.

    2015-06-01

    We have been developing superconducting thin-film fault current limiter (FCL) elements, in which high-resistivity Au-Ag alloy shunt layers are used to protect YBa2Cu3O7 (YBCO) thin films deposited on CeO2-buffered sapphire substrates. The high resistance of the thin films enables the element to withstand high electric fields of more than 40 Vpeak cm-1 during the current-limiting period after quenching, thus greatly reducing the amount of YBCO thin film needed and, consequently, the cost of an FCL. We have succeeded in fabricating and testing 500 V/200 A FCL modules using two 20 cm long YBCO films connected in parallel. In the present study, we performed extensive switching experiments on FCL elements, in which two YBCO films are connected in parallel to achieve higher rated currents, and confirmed the previously observed phenomenon that the hot-spot problem causing film damage just after quench initiation becomes more severe when the total critical current of the thin films is higher. We have investigated the origin of this phenomenon and found that a rapid current transfer from the first-quenched film with lower critical current to the other film causes higher current in the secondly-quenched film that sometimes leads to hot spots. It is demonstrated that the serious hot-spot problem can be mitigated by the use of inductors when the high-resistance FCL elements are connected in parallel. Based on these findings we propose an appropriate architecture of a high electric-field superconducting thin-film FCL that can be used in a real power grid.

  9. Processing and characterization of high temperature superconductor thin films deposited by electron beam co-evaporation

    NASA Astrophysics Data System (ADS)

    Huh, Jeong-Uk

    Ever since the high temperature superconductors (HTS) were discovered in the late 1980s, there have been enormous efforts to make this into applications such as power transmission cables, transformers, motors and generators. However, many obstacles in performance and high manufacturing cost made this difficult. The first generation HTS wires had low critical current density and were expensive to fabricate. The motivation of this research was to make high performance and low cost second generation HTS coated conductor. Electron beam co-evaporation technique was used to deposit YBCO(YBa2Cu3O7-x ) film at a high rate (10nm/s and higher) on single crystals and metal tapes. The oxygen pressure at the stage of depositing Y, Ba, Cu was 5x10 -5 Torr and the process temperature was 810-840°C. In-situ Fourier Transform Infrared spectroscopy (FTIR) was used to monitor the optical properties of the YBCO during and after deposition. The deposit transformed to a glassy amorphous mixture of Y, Ba and Cu at 3 mTorr of oxygen. YBCO crystallization occurred after extra oxygen was applied to several Torr. FTIR showed almost the same signature during the formation of YBCO and liquid Ba-Cu-O during deposition, which indicates the liquid played an important role in determining the properties of YBCO in terms of providing epitaxy and fast transport of atoms to nucleate on the film-metal interface. The transformation was very rapid---seconds to minutes, compared to minutes to hours for other post-reaction processes. The oxygen partial pressure and the rate of oxidation (supersaturation) in the liquid region defined in the YBCO phase stability diagram determined the electrical and microstructural properties. In-situ X-ray diffraction heating stage with ambient control was utilized to study this supersaturation effect and explore the temperature-pressure space during YBCO growth. With all the information gathered from FTIR and XRD in-situ experiments and also with nano-engineering during

  10. Micro-machined thin film hydrogen gas sensor, and method of making and using the same

    NASA Technical Reports Server (NTRS)

    DiMeo, Jr., Frank (Inventor); Bhandari, Gautam (Inventor)

    2001-01-01

    A hydrogen sensor including a thin film sensor element formed, e.g., by metalorganic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a microhotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magnetoresistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.

  11. Temperature-dependent growth of LaAlO{sub 3} films on YBa{sub 2}Cu{sub 3}O{sub 7} C-axis films for multilayer structures

    SciTech Connect

    Hawley, M.E.; Houlton, R.J.; Raistrick, I.A.; Garzon, F.H.

    1995-01-01

    Fabrication of ultra smooth films, free of micro-shorts, is essential to the development of High Temperature Superconducting (HTS) thin film devices. One such example is a SNS junction consisting of two HTS layers separated by a uniformly smooth continuous barrier material. Other schemes under consideration require multilayer structures of up to 5 - 7 epitaxially grown layers of complex oxide material. Successful fabrication of such devices necessitates understanding the epitaxial growth of polycrystalline oxide films on polycrystalline film templates. Toward this end we have developed a set of deposition parameters that produce high quality epitaxial insulating layers suitable for HTS device applications. All films in this study were grown by off-axis RF magnetron sputter deposition. LaAlO{sub 3} films were deposited over MgO grown YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) c-axis thin films at temperatures ranging from 200 to 700C and on virgin substrates at 600C. Atomic Force Microscopy, eddy current measurements, and x-ray diffraction techniques were used to monitor the effect of growth conditions on the resulting film crystallinity, nanostructure, and electrical properties. Ex-situ interrupted growth characterization of these materials has yielded new insight into the processes that control the growth mechanism and resulting microstructure. All films were polycrystalline. Below 600C, LaAlO{sub 3} films were not epitaxial while films grown at 650C showed some <200> orientation. The shape of the underlying YBCO film is most clearly evident for the film grown at 400C. Surface roughness depended on the appearance of crystals on the film surface. The superconducting properties of the underlying YBCO film required O{sub 2} annealing prior to deposition of the LaAlO{sub 3} layer.

  12. Metal-organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films

    NASA Technical Reports Server (NTRS)

    Macinnes, Andrew N.; Cleaver, William M.; Barron, Andrew R.; Power, Michael B.; Hepp, Aloysius F.

    1992-01-01

    The dimeric indium thiolate /(t Bu)2In(mu-S sup t Bu)/2 has been used as a single-source precursor for the MOCVD of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the nonequilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by TEM, with associated energy-dispersive X-ray analysis and X-ray photoelectron spectroscopy.

  13. Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films

    PubMed Central

    2011-01-01

    The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated. PMID:21711646

  14. Epitaxial thick film high-Tc SQUIDs

    NASA Astrophysics Data System (ADS)

    Faley, M. I.; Mi, S. B.; Jia, C. L.; Poppe, U.; Urban, K.; Fagaly, R. L.

    2008-02-01

    Low-noise operation of superconducting quantum interference devices (SQUIDs) in magnetic fields requires high critical current and strong pinning of vortices in the superconducting electrodes and in the flux transformer. Crack-free epitaxial high-Tc dc-SQUID structures with a total thickness ?5 μm and a surface roughness determined by 30 nm high growth spirals were prepared with YBa2Cu3O7-x (YBCO) films on MgO substrates buffered by a SrTiO3/BaZrO3-bilayer. HRTEM demonstrated a high quality epitaxial growth of the films. The YBCO films and SQUID structures deposited on the buffered MgO substrates had a superconducting transition temperature Tc exceeding 91 K and critical current densities Jc > 3 MA/cm2 at 77 K up to a thickness ~5 μm. The application of thicker superconducting and insulator films helped us to increase the critical current and dynamic range of the multilayer high-Tc flux transformer and improve the insulation between the superconducting layers. An optimization of SQUID inductance allowed us to fabricate 8 mm SQUID magnetometers with SQUID voltage swings of ~60 μV and a field resolution of ~30 fT/√Hz at 77 K.

  15. Peculiarities of photoluminescence of vertical n +/ n-GaAs/Al0.25Ga0.75As MBE- and MOCVD-grown structures designed for microwave detectors

    NASA Astrophysics Data System (ADS)

    Čerškus, Aurimas; Kundrotas, Jurgis; Sužiedėlis, Algirdas; Gradauskas, Jonas; Ašmontas, Steponas; Johannessen, Eric; Johannessen, Agne

    2015-09-01

    Vertical MBE- and MOCVD-grown structures used for microwave electronics have been studied with continuous wave and time-correlated single photon counting dynamic photoluminescence technique. The photoluminescence spectra and light emission lifetimes are used to explain the recombination mechanisms of the excited carriers. This paper presents results showing the differences in recombination characteristics of layers grown using MBE process compared with MOCVD process. One of these differences is that the PL spectrum of the MOCVD-grown layer is shifted towards the forbidden energy gap region, as well as the characteristic recombination time is longer than for the MBE-grown sample. This peculiarity can be attributed to the formation of the localised band tails in the MOCVD-grown sample. The proposed analytical model explains the differences in microwave detection properties of the samples grown by MBE and MOCVD processes.

  16. Protection of high temperature superconducting thin-films in a semiconductor processing environment

    SciTech Connect

    Xu, Yizi; Fiske, R.; Sanders, S.C.; Ekin, J.W.

    1996-12-31

    Annealing studies have been carried out for high temperature superconductor YBaCuO{sub 7{minus}{delta}} in a reducing ambient, in order to identify insulator layer(s) that will effectively protect the superconducting film in the hostile environment. While a layer of magnesium oxide (MgO) sputter deposited directly on YBaCuO{sub 7{minus}{delta}} film provides some degree of protection, the authors found that a composite structure of YBCO/SrTiO{sub 3}/MgO, where the SrTiO{sub 3} was grown by laser ablation immediately following YBCO deposition (in-situ process), was much more effective. They also address the need for a buffer layer between YBCO and aluminum (Al) during annealing. Al is most commenly used for semiconductor metalization, but is known to react readily with YBCO at elevated temperatures. The authors found that the most effective buffer layers are platinum (Pt) and gold/platinum (Au/Pt).

  17. Thin films of InP for photovoltaic energy conversion. Third quarterly technical progress report, December 29, 1979-March 28, 1980

    SciTech Connect

    Manasevit, H M; Ruth, R P; Moudy, L A; Yang, J J.J.; Johnson, R E

    1980-04-01

    A research study is being conducted for the purpose of developing a low-cost high-efficiency thin-film InP heterojunction solar cell based on InP films grown by the metalorganic chemical vapor deposition (MO-CVD) process on suitable substrates. Heterostructure devices of CdS/InP (and possibly indium tin oxide/InP) are to be prepared at Stanford University under subcontract, using the MO-CVD InP films grown at Rockwell. The work of the third quarter of the program is summarized. Experiments continued on evaluation of GaP as an intermediate layer material for subsequent growth of InP films on various substrate materials, and Cd (obtained from dimethylcadmium) was evaluated as a p-type dopant (an alternative to Zn obtained from diethylzinc) for InP films made by the MO-CVD process. A preliminary x-ray diffraction analysis was conducted of the crystallographic structure of the vacuum-deposited CdS films prepared at Stanford as part of the process of fabricating CdS/InP heterojunction solar cells. A group of CdS/InP heterostructure cells involving vacuum-deposited CdS and p-type epitaxial InP films grown by MO-CVD was prepared and evaluated. High J/sub 0/ values and low fill factors were observed in all of the cells, resulting in AM1.5 efficiencies in the 2 to 5 percent range. (WHK)

  18. Transparent Conducting ZnO:B Thin Films Grown by Ultraviolet Light Assisted Metal Organic Chemical Vapor Deposition Using Triethylboron for Cu(In,Ga)Se2 Solar Cells

    NASA Astrophysics Data System (ADS)

    Kobayashi, Taizo; Yamauchi, Kotaro; Mise, Takahiro; Nakada, Tokio

    2012-10-01

    High-efficiency cadmium-free Cu(In,Ga)Se2 (CIGS) thin-film solar cells have been fabricated using a zinc compound buffer layer deposited by the chemical bath deposition (CBD) process. However, the zinc compound buffer layers such as ZnS(O,OH) are prone to plasma-induced damage during the subsequent ZnO sputtering process. A process causing less damage such as metal-organic chemical vapor deposition (MOCVD) is thus required for ZnO-based transparent conducting oxide (TCO) layers. In the present work, the boron-doped zinc oxide (ZnO:B) films were grown by MOCVD using diethyl zinc (DEZ), H2O, and low-toxicity triethylboron (TEB). An UV-assisted MOCVD process was developed in order to reduce the resistivity of ZnO:B films. As a result, the resisitivity significantly decreased together with the increased electron mobility and carrier concentration. The comparison of performance was also carried out for the ZnS(O,OH)/CIGS solar cells with MOCVD-deposited ZnO:B and sputter-deposited ZnO:Al window layers.

  19. Electrical transport properties of (110)-oriented PrBa2(Cu0.8Ga0.2)3O7 thin films

    NASA Astrophysics Data System (ADS)

    Kandel, Hom; Chen, Tar-Pin; Bourdo, Shawn; Iliev, Milko N.; Watanabe, Fumiya; Seo, Hye-Won; Viswanathan, Tito

    2012-06-01

    The electrical transport properties of (110)-oriented PrBa2(Cu0.8Ga0.2)3O7 (PBCGO) thin films have been investigated. The electrical resistivity, ρ(T), of (110)-oriented PBCGO thin films is 8.91 × 105 Ω-cm at 77 K, about five orders of magnitude higher than that of the (110)-oriented PrBa2Cu3O7 thin films and follows Mott's T-1/4 law up to room temperature. Our experimental results suggest filling and localization of holes in Cu-O chains of (110)-oriented PBCGO thin films. We observed very less proximity effect on YBa2Cu3O7 (YBCO)/PBCGO multilayers indicating that the (110)-oriented PBCGO thin films may serve as effective insulators in YBCO SIS tunneling Josephson junction.

  20. InGaAs/InP PIN photodetector arrays made by MOCVD based zinc diffusion processes

    NASA Astrophysics Data System (ADS)

    Islam, Mohammad; Feng, J. Y.; Berkovich, Andrew; Abshire, Pamela; Barrows, Geoffrey; Choa, Fow-Sen

    2016-05-01

    InGaAs based long-wavelength near infrared detector arrays are very important for high dynamic range imaging operations seamlessly from daylight environments to dark environments. These detector devices are usually made by open-hole diffusion technique which has the advantage of lower leakage current and higher reliability. The diffusion process is usually done in a sealed quartz ampoule with dopant compounds like ZnP2, ZnAs3, CdP2 etc. side by side with semiconductor samples. The ampoule needs to be prepared and sealing process needs to be done in very clean environment and each time can have variations. In this work we demonstrated using MOCVD growth chamber to perform the diffusion process. The advantages of such a process are that the tool is constantly kept in ultra clean environment and can reproducibly provide clean processes without introducing unexpected defects. We can independently control the temperature and flow rate of the dopant - they are not linked as in the ampoule diffusion case. The process can be done on full wafers with good uniformity through substrate rotation, which is good for large detector array fabrications. We have fabricated different types of InGaAs/InP detector arrays using dimethyl zinc as the dopant source and PH3 or AsH3 for surface protection. Pre-studies of Zn-diffusion profiles in InGaAs and InP at different temperatures, flow rates, diffusion times and followed annealing times were conducted to obtain good control of the process. Grown samples were measured by C-V profilometer to evaluate the diffusion depth and doping concentration. The dependence of the diffusion profile with temperature, dopant partial pressures, and annealing temperature and time and some of the fabricated device characteristics are reported.

  1. Study of carrier recombination transient characteristics in MOCVD grown GaN dependent on layer thickness

    SciTech Connect

    Gaubas, E. Čeponis, T.; Jasiunas, A.; Jelmakas, E.; Juršėnas, S.; Kadys, A.; Malinauskas, T.; Tekorius, A.; Vitta, P.

    2013-11-15

    The MOCVD grown GaN epi-layers of different thickness have been examined in order to clarify a role of surface recombination, to separate an impact of radiative and non-radiative recombination and disorder factors. The microwave probed –photoconductivity (MW-PC) and spectrally resolved photo-luminescence (PL) transients were simultaneously recorded under ultraviolet (UV) light 354 nm pulsed 500 ps excitation. The MW-PC transients exhibited the carrier decay components associated with carrier decay within micro-crystals and the disordered structure on the periphery areas surrounding crystalline columns. Three PL bands were resolved within PL spectrum, namely, the exciton ascribed UV-PL band edge for hν>3.3 eV, blue B-PL band for 2.5 < hν < 3.0 eV and yellow Y-PL band with hν < 2.4 eV. It has been obtained that intensity of UV-PL band increases with excitation density, while intensity of B-PL band is nearly invariant. However, intensity of the Y-PL increases with reduction of the excitation density. The Y-PL can be associated with trapping centers. A reduction of UV excitation density leads to a decrease of the relative amplitude of the asymptotic component within the MW-PC transients and to an increase of the amplitude as well as duration of the yellow spectral band (Y-PL) asymptotic component. Fractional index α with values 0.5 < α < 0.8 was evaluated for the stretched-exponent component which fits the experimental transients determined by the disordered structure ascribed to the periphery areas surrounding the crystalline columns.

  2. Characterization of Defects on MOCVD Grown Gallium Nitride Using Transient Analysis Techniques

    NASA Astrophysics Data System (ADS)

    Kasani, Sujan Phani Kumar

    Since the invention of the first visible spectrum (red) LED by Holonyak in 1962, there has been a need for more efficient, more reliable and less expensive LEDs. The III-nitrides revolutionized semiconductor technology with their applications in the blue LED's. However the internal quantum efficiency of LED's are limited by the deep level traps in GaN substrate. Traps are defects in the crystal lattice, which depends on growth parameters. These traps act as non-radiative centers where non-radiative recombination occurs without conversion of available energy into light. Characterization of these traps in a material is necessary for better understanding of the material growth quality and resulting device performance. In this work Capacitance-Voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) are conducted which provide electronic properties of trap centers like activation energy, doping concentration and capture cross-section. In n-GaN grown by Metalorganic Chemical Vapor Deposition (MOCVD) on Sapphire two defects types are detected and are characterized by Capacitance-Voltage and Deep Level Transient Spectroscopy. Two deep levels E1 and E2 are typically observed in n-GaN with the activation energies of 0.21eV and 0.53eV at 125°K and 325°K, respectively. The deep level E1 is caused by linear line defects along dislocation cores while deep level E2 is related to point defects. The characterization techniques, experimental systems and preliminary characterization results are discussed in detail.

  3. Thermal annealing study of as-grown n-type MOCVD GaAs

    NASA Astrophysics Data System (ADS)

    Naz, Nazir A.; Qurashi, Umar S.; Zafar Iqbal, M.

    2007-12-01

    Results of isochronal annealing up to a temperature of 660 K of n-type GaAs grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) are reported. Deep-level transient spectroscopy (DLTS) reveals EL2 as the only electron-emitting deep-level defect in our as-grown material, whereas three hole-emitting levels at Ev+0.09 eV, Ev+0.40 eV and Ev+0.93 eV are observed in the minority-carrier injection spectra. While yielding interesting results on the behavior of these pre-existing deep-level defects, thermal annealing is found to introduce at least four new defects, three in the upper half of the band gap at Ec-0.13 eV, Ec-0.16 eV and Ec-0.36 eV, and one in the lower half at Ev+0.19 eV. Two of these defects, one at Ec-0.16 eV and the other at Ec-0.36 eV, are identified with previously reported annealed-in deep levels in n-GaAs, while the other two defects cannot be identified with any of the deep levels reported in the literature. Data on the annealing behavior and other characteristics of these annealed-in levels are presented. All the pre-existing inadvertent deep-level defects in the as-grown material were found to be stable up to 600 K, beyond which the minority-carrier emitting levels start to anneal out, but EL2 tends to show a slight increase with annealing temperature.

  4. Doubly charged state of EL2 defect in MOCVD-grown GaAs

    NASA Astrophysics Data System (ADS)

    Naz, Nazir A.; Qurashi, Umar S.; Majid, Abdul; Zafar Iqbal, M.

    2007-12-01

    EL2 is the ubiquitous native defect in crystalline GaAs grown by a variety of different techniques. It has been proposed to be a doubly charged deep-level center with two states having distinct energy levels in the band gap. While the singly charged state has been the subject of many experimental studies and is, therefore, well established, the doubly charged state has only been occasionally alluded to in the literature. This paper provides evidence for a dominant inadvertent deep level in p-type GaAs most likely to be the doubly charged state of the EL2 center. Deep-level transient spectroscopy (DLTS) has been applied to characterize epitaxial layers of p-type GaAs grown on p + GaAs substrates by low-pressure metal organic chemical vapor deposition (LP-MOCVD). A pronounced peak is observed in the majority carrier (hole) emission deep-level spectra. Thermal emission rate of holes from the corresponding deep level is found to exhibit a strong electric field dependence, showing an increase of more than two orders of magnitude with an increase of the electric field by a factor of ∼2. The thermal activation energy for this level is found to vary from 0.29 to 0.61 eV as the electric field is varied from 2.8×10 5 to 1.4×10 5 V/cm. Direct pulse-filling measurements point to a temperature-dependent behavior of the hole capture cross section of this level. We identify this inadvertent deep-level defect, commonly observed in p-type GaAs grown by a variety of different methods, with the doubly charged state of the well-known As Ga antisite related defect, EL2.

  5. Fabrication of InGaN quantum dots by periodically interrupted growth in MOCVD

    NASA Astrophysics Data System (ADS)

    Choi, Seung-Kyu; Jang, Jae-Min; Yi, Sung-Hak; Kim, Jung-A.; Jung, Woo-Gwang

    2008-03-01

    Self-assembled InGaN quantum dots are fabricated in a two-flow horizontal MOCVD reactor maintained at the pressure of 200 torr. The precursors were trimethyl-gallium (TMG) and trimethyl-indium (TMI) and ammonia (NH 3), and the carrier gas was N II and H II. The optimum condition for periodically interrupted growth (PIG) mode was deduced to fabricate the InGaN quantum dots. NH 3 was supplied in PIG mode with the interval of 3 seconds and 5 seconds while TMG and TMI were supplied continuously. The carrier gas was N II in QDs growth, while H II in nucleation and buffer layer growth. The influence of number of periodic interrupted NH 3 on the structural and optical properties of InGaN quantum dots was investigated by AFM, FE-SEM and low temperature photoluminescence (LT-PL). The AFM images give the size of InGaN QDs with diameter of 20 ~ 50 nm, height of 3 ~ 10 nm and density of 10 10 #/cm2 ~ 10 11 #/cm2. A strong peak at 362.2 nm (3.41eV) and broad emission peak in 435 nm (2.86 eV) were evolved in the photoluminescence measurement using Nd-YAG laser. The composition of QDs was estimated to be In 0.14Ga 0.86N from the relation between peak energy and indium content. Hence. The periodic interruption growth enables the fabrication of self- assembled InGaN QDs with high density and uniform size.

  6. Growth of superconducting NdFe0.88Co0.12AsO films by metal-organic chemical vapor deposition and post arsenic diffusion

    NASA Astrophysics Data System (ADS)

    Corrales-Mendoza, I.; Bartolo-Pèrez, P.; Sánchez-Reséndiz, V. M.; Gallardo-Hernández, S.; Conde-Gallardo, A.

    2015-01-01

    Metal-organic chemical vapor deposition (MOCVD) and post-deposition arsenic diffusion processes were successfully employed to grow superconducting NdFe0.88Co0.12AsO thin films. First, by employing iron, cobalt and neodymium metal-organic precursors, a precursor film is grown by MOCVD on (001)-oriented LaAlO3 substrates. Subsequently, the arsenic is incorporated during an annealing of these precursor films in the presence of a NdFe0.9Co0.1AsO pellet. The chemical composition and crystallographic results indicate the formation of the cobalt-doped NdFeAsO polycrystalline phase. The secondary ion mass spectroscopy indicates a homogeneous arsenic diffusion process. The resistance and magnetization measurements as a function of temperature indicate a superconducting transition ˜15 \\text{K} .

  7. Anisotropy of the Transport Properties in Yttrium BARIUM(2) COPPER(3) OXYGEN(7-DELTA) (110) Thin Films

    NASA Astrophysics Data System (ADS)

    Wu, Judy Zhihong

    The anisotropy of the transport properties was studied systematically on high-quality epitaxial YBCO (110) thin-films obtained by both dc magnetron-sputtering and pulsed laser-ablation on single crystal (110) SrTiO _3 substrates. These films have in-plane alignment of the c-axis of YBCO, which is essential to the transport study of the anisotropy between the ab-plane and the c-axis. Along the c-axis, rho shows a semiconductor-like upturn as T decreases and a metallic T-linear behavior along the Cu-O plane. This confirms the correlation between the semiconductor-like rho along the c-axis and slight oxygen -deficiency in YBCO. As point-defects are introduced into the thin-film by the 200 keV proton-irradiation, the rho-anisotropy dramatically changes. Along the Cu-O planes, these defects contribute only a residual rho as in normal metals. Along the c-axis, rho is significantly reduced. A "phase transition" from semiconductor-like to metal-like is completed at a low proton dose of 6times10 ^{14} ions/cm^2 , where little effect is observed on T_ {c} and rho_{ab }. This suggests that the unusual normal-state transport properties are irrelevant to the mechanism of HTS. In the superconducting state, the J_ {c,trans} has been measured as functions of T, H, and the direction of H. The T-dependence along the Cu-O plane fits the vortex-glass model while along the c-axis, it fits the Josephson tunnel-junction model. This observation implies that the extrinsic weak-link effect determines J_{c,trans} along the Cu-O plane while the intrinsic tunnelling of the charge carriers limits J_{c,trans } along the c-axis. Similar measurements have also been conducted on YBCO a-, c-, and (113)-oriented thin films. Intrinsic pinning is the strongest pinning effect in YBCO despite the orientation of the film. J _{c}-anisotropy in different field directions is due to the anisotropy of the pinning-effect. The surface pinning-effect is observed (for the first time) on YBCO. It becomes visible

  8. Effects of densification of precursor pellets on microstructures and critical current properties of YBCO melt-textured bulks

    NASA Astrophysics Data System (ADS)

    Setoyama, Yui; Shimoyama, Jun-ichi; Motoki, Takanori; Kishio, Kohji; Awaji, Satoshi; Kon, Koichi; Ichikawa, Naoki; Inamori, Satoshi; Naito, Kyogo

    2016-12-01

    Effects of densification of precursor disks on the density of residual voids and critical current properties for YBCO melt-textured bulk superconductors were systematically investigated. Six YBCO bulks were prepared from precursor pellets with different initial particle sizes of YBa2Cu3Oy (Y123) powder and applied pressures for pelletization. It was revealed that use of finer Y123 powder and consolidation using cold-isostatic-pressing (CIP) with higher pressures result in reduction of residual voids at inner regions of bulks and enhance Jc especially under low fields below the second peak.

  9. Superconducting Generators for Airborne Applications and YBCO-Coated Conductors (Preprint)

    DTIC Science & Technology

    2008-10-01

    This work was supported in part by the U.S. Air Force Research Laboratory and Air Force Office of Scientific Research. P . N...Advancing YBCO Coated Conductors for Use on Air Platforms,” Int. J. Appl. Ceramic Technol., vol. 4, pp. 242-249, July 2007. [3] A. P . Malozemoff, S...Fleshler, M. Rupich, C. Thieme, X. Li, W. Zhang, A. Otto, J. Maguire, D. Folts, J. Yuan, H- P . Kraemer, W. Schmidt, M. Wohlfart, and H-W. Neumueller

  10. Effect of bulk growth temperature on antiphase domain boundary annihilation rate in MOCVD-grown GaAs on Si(001)

    NASA Astrophysics Data System (ADS)

    Barrett, C. S. C.; Martin, T. P.; Bao, X.-Y.; Kennon, E. L.; Gutierrez, L.; Martin, P.; Sanchez, E.; Jones, K. S.

    2016-09-01

    GaAs is a material of interest as a potential buffer layer in future III-V semiconductor-based transistor technologies integrated on Si wafers. The goal of this study was to investigate the effect of growth temperature on the propagation and annihilation of antiphase domain boundaries (APBs) in GaAs films grown on Si(001) by metal-organic chemical vapor deposition (MOCVD). No intentional wafer off-cuts or high temperature pre-growth anneals (>1000 °C) were employed as both of these practices complicate integration with other devices. To evaluate the role of growth temperature on the APB evolution, a 200 nm thick layer of GaAs was grown on the Si at a fixed temperature of 530 °C so that all samples started with the same approximate APB density. Subsequently, 600 nm of GaAs was grown at temperatures varying between 530 °C and 650 °C. Chemical etching combined with scanning electron microscopy (SEM) was used to profile the density of the APBs in each sample as a function of depth. The APB annihilation rate, i.e. the exponential decay rate of APB density with respect to film thickness, increases from 2.6 μm-1 to 10.7 μm-1 as the growth temperature increases from 530 °C to 610 °C and then saturates. The increase in annihilation rate with increasing temperatures suggests that the higher temperatures remove kinetic barriers to the reduction of the overall APB interfacial area. An activation energy of 1.1 eV was extracted using an Arrhenius relationship and likely corresponds to the energy needed for APBs to kink from {110} to higher-index planes, e.g. {112}. Dark field transmission electron microscopy showed that at higher growth temperatures the APBs can shift from vertical {110} habit planes to {112} planes leading to self-annihilation with sufficient thickness.

  11. 500 V/200 A fault current limiter modules made of large-area MOD-YBa2Cu3O7 thin films with high-resistivity Au-Ag alloy shunt layers

    NASA Astrophysics Data System (ADS)

    Yamasaki, H.; Arai, K.; Kaiho, K.; Nakagawa, Y.; Sohma, M.; Kondo, W.; Yamaguchi, I.; Matsui, H.; Kumagai, T.; Natori, N.; Higuchi, N.

    2009-12-01

    We developed 500 Vrms/ 200 Arms superconducting thin-film fault current limiter (FCL) modules that can withstand high electric fields (E>30 Vrms cm-1) by using large-area YBa2Cu3O7 (YBCO) thin films with high-resistivity Au-Ag alloy shunt layers. Au-Ag alloy films about 60 nm thick were sputter-deposited on YBCO/CeO2/sapphire films (2.7 cm × 20 cm) prepared using a fluorine-free MOD method. Each 20 cm long Au-Ag/YBCO film was then divided into three segments (each ~5.7 cm long) by four Ag electrodes deposited on the Au-Ag layer, resulting in an effective length of 17 cm. The 500 V/200 A FCL modules were then fabricated by first connecting two of the segmented films in parallel using Ag-sheathed Bi-2223 superconducting tapes and then connecting in parallel an external resistor and a capacitor for each segment to protect the Au-Ag/YBCO film from hot spots. Switching tests using a short-circuit generator revealed that all the modules carried a superconducting ac current of >=237 Arms and that modules prepared with YBCO films having a relatively homogeneous critical current Ic distribution successfully withstood >=515 Vrms for five cycles without any damage. These results demonstrate that (a) the FCL modules fabricated here successfully achieved the rated current of 200 Arms and rated voltage of 500 Vrms and (b) total area of the YBCO films on sapphire substrates required for the 500 V/200 A (100 kV A) module was less than one-third that for conventional thin-film FCL modules that use gold shunt layers, leading to the significantly reduced cost of thin-film FCLs. Film damage due to hot spots depended on the difference in Ic between the two parallel-connected films and on the inhomogeneity of the Ic distribution in the film, and is most probably due to nonlinear current flows at the moment of quenching that cause local overheating.

  12. Growth and characterization of AlGaN films on patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Kwak, Y. S.; Lee, D. S.; Kim, K. H.; Kim, W. H.; Moon, S. W.

    2011-12-01

    A GaN film and two AlGaN films with Al compositions of 5% and 10% have been grown on the patterned sapphire substrates (PSSs) by metal organic chemical vapor deposition (MOCVD). Optical properties and crystalline qualities of the films have been investigated. The GaN film and the Al0.05Ga0.95N film are almost entirely coalesced except for some point defects. However, the Al0.1Ga0.9N film contains large pits encircled by small pits adjacent to them. The large pits are distributed in the same manner with the PSS arrangement. Dislocations and inversion domain boundaries were also observed in the Al0.1Ga0.9N film.

  13. Effects of Nanoscale Defects on Critical Current Density of (Y1-xEux)Ba2Cu3O7-delta Thin Films (Postprint)

    DTIC Science & Technology

    2010-02-01

    the high density of pores observed in the unsubstituted YBCO films in this study, ranging from 100 to 200 nm in size, with a number density of 2...spacing of the observed threading dislocations was 40 1012 m2 and 100 nm , respectively. The matching field for this density is well below 1 T...shows the double oxide layers. Normally strong white fringes of Cu–O planes between the Ba–O planes are observed at 1.2 nm spacing for YBCO [19]. Such

  14. Ion-assisted laser deposition of intermediate layers for YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} thin film growth on polycrystalline and amorphous substrates

    SciTech Connect

    Reade, R.P.

    1993-11-01

    The growth of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) high-temperature superconductor thin films has largely been limited to deposition on single-crystal substrates to date. In order to expand the range of potential applications, growth on polycrystalline and amorphous substrates is desirable. In particular, the deposition of YBCO thin films with high critical current densities on polycrystalline metal alloys would allow the manufacture of superconducting tapes. However, it is shown that it is not possible to grow YBCO thin films directly on this type of substrate due to chemical and structural incompatibility. This work investigates the use of a yttria-stabilized zirconia (YSZ) intermediate layer to address this problem. An ion-assisted pulsed-laser deposition process is developed to provide control of orientation during the growth of the YSZ layers. The important properties of YBCO and YSZ are summarized and the status of research on thin film growth of these materials is reviewed. An overview of the pulsed-laser deposition (PLD) technique is presented. The use of ion-assisted deposition techniques to control thin film properties is discussed.

  15. Optimization of a fluorine-free metal-organic deposition to fabricate BaZrO3-doped YBa2Cu3O7-δ film on RABiTS substrates

    NASA Astrophysics Data System (ADS)

    Lu, F.; Kametani, F.; Hellstrom, E. E.

    2013-04-01

    In this study, we used a systematic route to optimize the fluorine-free MOD process to achieve a high critical current density (Jc) in BaZrO3 (BZO)-doped YBCO films on RABiTS substrates. The BZO content is given by 1 YBCO+x BZO films, where x is moles of BZO per 1 mole of YBCO. We found x = 0.10 to be the optimal BZO content and ˜795-805 °C to be the optimal growth temperature window with 60-90 min processing time. TEM studies show the BZO nanoparticles are ˜20 nm in size and spaced ˜50-100 nm apart. The in-field Jc and the peak pinning force (Fp) of the film grown at the optimal conditions were greatly increased at 77 K relative to pure YBCO films, achieving ˜6.7 GN m-3 at 77 K, H ‖ c in a ˜800 nm thick x = 0.10 film. The angular dependence of in-field Jc measurements also shows greatly reduced angular anisotropy at 1 and 4 T at 77 K due to isotropic pinning by BZO nanoparticles.

  16. Influence of Mg and In on defect formation in GaN; bulk and MOCVD grown samples

    SciTech Connect

    Liliental-Weber, Z.; Benamara, M.; Jasinski, J.; Swider, W.; Washburn, J.; Grzegory, I.; Porowski, S.; Bak-Misiuk, J.; Domagala, J.; Bedair, S.; Eiting, C.J.; Dupuis, R.D.

    2000-11-22

    Transmission electron microscopy studies were applied to study GaN crystals doped with Mg. Both: bulk GaN:Mg crystals grown by a high pressure and high temperature process and those grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. Structural dependence on growth polarity was observed in the bulk crystals. Spontaneous ordering (formation of polytypoids) was observed for growth in the N to Ga polar direction (N polarity). On the opposite site of the crystal (growth in the Ga to N polar direction) Mg-rich pyramidal defects with base on the basal planes and with walls inclined about 45O to these planes, empty inside (pinholes) were observed. A high concentration of these pyramidal defects was also observed in the MOCVD grown crystals. For samples grown with Mg delta doping planar defects were also observed especially at the early stages of growth followed by formation of pyramidal defects. TEM and x-ray studies of InxGa{sub 1{minus}x}N crystals for the range of 28-45% nominal In concentration shows formation of two sub-layers: strained and relaxed, with a much lower In concentration in the strained layer. Layers with the highest In concentration were fully relaxed.

  17. DLTS study of n-type GaN grown by MOCVD on GaN substrates

    NASA Astrophysics Data System (ADS)

    Tokuda, Y.; Matsuoka, Y.; Ueda, H.; Ishiguro, O.; Soejima, N.; Kachi, T.

    2006-10-01

    Electron traps in n-type GaN layers grown homoepitaxially by MOCVD on free-standing GaN substrates have been characterized using DLTS for vertical Schottky diodes. Two free-standing HVPE GaN substrates (A and B), obtained from two different sources, are used. The Si-doped GaN layers with the thickness of 5 μm are grown on an area of 0.9×0.9 cm 2 of substrate A and on an area of 1×1 cm 2 of substrate B. Two traps labeled B1 (Ec-0.23 eV) and B2 (Ec-0.58 eV) are observed with trap B2 dominant in GaN on both substrates. There exist no dislocation-related traps which have been previously observed in MOCVD GaN on sapphire. This might be correlated to the reduction in dislocation density due to the homoepitaxial growth. However, it is found that there is a large variation, more than an order of magnitude, in trap B2 concentration and that the B2 spatial distributions are different between the two substrates used.

  18. Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

    NASA Astrophysics Data System (ADS)

    Kopytko, M.; Jóźwikowski, K.; Martyniuk, P.; Gawron, W.; Madejczyk, P.; Kowalewski, A.; Markowska, O.; Rogalski, A.; Rutkowski, J.

    2016-09-01

    In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technology. It is shown that MOCVD technology is an excellent tool for HgCdTe barrier architecture growth with a wide range of composition, donor /acceptor doping, and without post-grown annealing. The device concept of a specific barrier bandgap architecture integrated with Auger-suppression is as a good solution for high-operating temperature infrared detectors. Analyzed devices show a high performance comparable with the state-of-the-art of HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07" and detectivities of non-immersed detectors are close to the value marked for HgCdTe photodiodes. Experimental data of long-wavelength infrared detector structures were confirmed by numerical simulations obtained by a commercially available software APSYS platform. A detailed analysis applied to explain dark current plots was made, taking into account Shockley-Read-Hall, Auger, and tunneling currents.

  19. Studies of metallic species incorporation during growth of SrBi{sub 2}Ta{sub 2}O{sub 9} films on YBa{sub 2}Cu{sub 3}O{sub 7-x} substrates using mass spectroscopy of recoiled ions.

    SciTech Connect

    Dhote, A. M.

    1999-01-13

    The incorporation of metallic species (Bi, Sr and Ta) during the growth of layered perovskite SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) on a-axis oriented YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (YBCO) conducting oxide substrates has been investigated using in situ low energy mass spectroscopy of recoiled ions (MSRI). This technique is capable of providing monolayer-specific surface information relevant to the growth of single and multi-component thin films and layered heterostructures. The data show a temperature dependence of metallic species incorporation during co-deposition of Sr, Bi and Ta on YBCO surfaces. At high temperatures (400 < T {le} 700 C), negligible incorporation of Bi is observed as compared to Ta and Sr. At low temperatures ({le} 400 C), there is a substantial incorporation of Bi, Sr and Ta on the surface of YBCO, and the MSRI signal intensities for Sr, Bi and Ta are nearly independent of substrate temperature. According to thermodynamic calculations, the presence of Ba and Y on the YBCO surface inhibit the incorporation of Bi due to competition for oxygen required to establish bonding of metallic species to the surface. This may be the explanation for the observed Bi deficiency in films grown on YBCO surfaces at temperatures >400 C. SBT films grown at temperatures {le} 400 C and annealed in oxygen or air at 800 C exhibit a polycrystalline structure with partial a-axis orientation.

  20. Test Status for Proposed Coupling of a Gravitational Force to Extreme Type II YBCO Ceramic Superconductors

    NASA Technical Reports Server (NTRS)

    Noever, David; Li, Ning; Robertson, Tony; Koczor, Ron; Brantley, Whitt

    1999-01-01

    As a Bose condensate, superconductors provide novel conditions for revisiting previously proposed couplings between electromagnetism and gravity. Strong variations in Cooper pair electron density, large conductivity and low magnetic permeability define superconductive and degenerate condensates without the traditional density limits imposed by the Fermi energy (about 10-6 g/cu cm). Recent experiments have reported anomalous weight loss for a test mass suspended above a rotating Type II, YBCO superconductor, with the percentage change (0.05-2.1%) independent of the test mass' chemical composition and diamagnetic properties. A variation of 5 parts per 10(exp 4) was reported above a stationary (non-rotating) superconductor. In the present experiments reported using a sensitive gravimeter (resolution <10(exp -9) unit gravity or variation of 10(exp -6) cm/sq s in accelerations), bulk YBCO superconductors were stably levitated in a DC magnetic field (0.6 Tesla) subject to lateral AC fields (60 Gauss at 60 Hz) and rotation. With magnetic shielding, thermal control and buoyancy compensation, changes in acceleration were measured to be less than 2 parts in 10(exp 8) of the normal gravitational acceleration. This result puts new limits on the strength and range of the proposed coupling between high-Tc superconductors and gravity. Latest test results will be reported, along with status for future improvements and prospects.

  1. Pinning properties of quenched and melt growth method-YBCO bulk samples

    NASA Astrophysics Data System (ADS)

    Okayasu, S.; Sasase, M.; Kuroda, N.; Iwase, A.; Kazumata, Y.; Kambara, T.

    2001-09-01

    A comparison between two different irradiation effects was accomplished on bulk YBCO samples synthesized with the quenched and melt growth method (QMG-YBCO) to investigate strong pinning properties. High-energy proton-irradiation introduces small defects comparable to unit cell size into the sample, and they act as effective pinning centers for all temperature range in low field around 1 T. No enhancement, however, can be seen in higher field range. The defects introduced with the irradiation reinforce the pinning properties of preexisting pinning centers randomly distributing in the sample. Column-like defects with 3.5 GeV Xe-irradiation were introduced but the pinning properties show no significant enhancement except higher temperature region. This indicates that pre-existing pinning centers are strong enough than the columnar defects. In higher field region, the contribution of columnar defects for pinning becomes relatively large. For both irradiation cases, almost pinning properties are determined by the pre-existing pinning centers.

  2. Magnetic memory in a ceramic YBCO superconductor composed of sub-micron-size grains

    NASA Astrophysics Data System (ADS)

    Deguchi, Hiroyuki; Ashida, Takuya; Syudo, Mitsuhiro; Mito, Masaki; Takagi, Seishi; Hagiwara, Makoto; Koyama, Kuniyuki

    2013-06-01

    The ceramic YBa2Cu4O8 (YBCO) composed of sub-micron-size grains is considered as a random Josephson-coupled network of 0 and π junctions and shows successive phase transitions. The first transition occurs inside each grain at T c1 = 81 K, and the second transition occurs among the grains at T c2 = 47 K. A magnetic glass behavior similar to those of spin-glasses is observed at temperatures below T c2. The memory phenomena are investigated by recording the zero-fieldcooled and thermoremanent magnetizations measured on heating after the cooling process with a halt at T s = 41 K. Memory effects of the halt are imprinted in the system when the sample is re-heated. In the case without a field switch at T s , the influence of the halt is confined to a narrow temperature region near T s whereas the memory effect of the halt employing a field switch is extended over a wide temperature region below T s . The results suggest that chiral-glass ordering occurs at T c2 in the ceramic YBCO.

  3. Inkjet printing of multifilamentary YBCO for low AC loss coated conductors

    NASA Astrophysics Data System (ADS)

    Hopkins, S. C.; Joseph, D.; Mitchell-Williams, T. B.; Calleja, A.; Vlad, V. R.; Vilardell, M.; Ricart, S.; Granados, X.; Puig, T.; Obradors, X.; Usoskin, A.; Falter, M.; Bäcker, M.; Glowacki, B. A.

    2014-05-01

    Considerable progress has been made with the development of REBCO coated conductors in recent years, and high performance conductors are available commercially. For many applications, however, the cost remains prohibitive, and AC losses discourage their selection for higher frequency applications. Chemical solution deposition (CSD) methods are attractive for low-cost, scalable preparation of buffer and superconductor layers, and in many respects inkjet printing is the method of choice, permitting non-contact deposition with minimal materials wastage and excellent control of coating thickness. Highly textured coatings of YBCO and Gd-doped CeO2 have previously been reported on buffered metal substrates. Inkjet printing also introduces the possibility of patterning - directly depositing two and three dimensional structures without subtractive processing - offering a low-cost route to coated conductors with reduced AC losses. In this contribution, the inkjet deposition of superconducting YBCO tracks is reported on industrially relevant buffered metal substrates both by direct printing and an inverse patterning approach. In the latter approach, ceria tracks were printed reported, which are a candidate both for resistive filament spacers and buffer layers. TFA-based precursor solutions have been printed on SS/ABAD-YSZ/CeO2 and Ni-W/LZO/CeO2 RABiTS substrates, and the resulting multifilamentary samples characterised by microscopy and scanning Hall probe measurements. The prospects for future inkjet-printed low AC loss coated conductors are discussed, including control of interfilamentary resistivity and bridging, transposed filamentary structures and stabilisation material.

  4. ARPES study of the YBCO phase diagram by in-situ K evaporation

    NASA Astrophysics Data System (ADS)

    Fournier, D.; Levy, G.; McCheyney, J. L.; Bostwick, A.; Rotenberg, E.; Hardy, W. N.; Liang, R. X.; Bonn, D. A.; Elfimov, I. S.; Damascelli, A.

    2010-03-01

    The study of the YBCO phase diagram by ARPES has become of central interest since the observation of quantum oscillations in high-magnetic field [1]. However, until recently accessing the various electronic phases by photoemission has been hampered by the so-called polar catastrophe [2]. In this work, the overdoped metal (OD, p=0.37, Tc=0), the superconducting phase (OP, TYBCO, we are able to identify the doping value at which the Luttinger description breaks down upon underdoping.[1] N. Doiron-Leyraud et al., Nature 447, 565 (2007).[2] M. A. Hossain et al., Nat. Phys. 4, 527 (2008).[3] K. M. Shen et al., Science 307, 901 (2005).

  5. VOLTAGE DISTRIBUTION AND MECHANICAL STRENGTH IN SPLICE JOINTS MADE FROM AS-MANUFACTURED YBCO COATED CONDUCTORS

    SciTech Connect

    Duckworth, Robert C; Zhang, Yifei; Gouge, Michael J; Rey, Christopher M; Van der Laan, Danko; Clickner, Cam

    2010-01-01

    With recommendations from wire manufacturers as a starting point, a series of solder joints were fabricated and characterized to determine the best method to produce repeatable, low-resistance and high-mechanical-strength splices in as-manufactured, stabilized YBCO coated conductors. From the 2.54 cm long splice joints that were fabricated, parameters such as solder material, stabilization material, fabrication method, and conductor geometry were varied to determine the impact of each on splice joint properties. Results indicate that the lowest resistance splice joints were influenced primarily by the tape orientation in the joint and the stabilization material. The lowest resistances were between 2 10-8 and 1.0 10-7 in 4-mm wide tapes and were obtained from pure copper stabilized tapes oriented with the YBCO layers in closest proximity. The voltage drop along the splice length indicated that only a fraction of the splice length contributes to the splice joint resistance. Mechanical characterization of splice joints showed that the joint resistance remained unchanged under axial stress up to a stress level at which the critical current of the tapes forming the joint degrades irreversibly.

  6. Feasibility studies of the growth of 3-5 compounds of boron by MOCVD

    NASA Technical Reports Server (NTRS)

    Manasevit, H. M.

    1988-01-01

    Boron-arsenic and boron-phosphorus films have been grown on Si sapphire and silicon-on-sapphire (SOS) by pyrolyzing Group 3 alkyls of boron, i.e., trimethylborane (TMB) and triethylborane (TEB), in the presence of AsH3 and PH3, respectively, in an H2 atmosphere. No evidence for reaction between the alkyls and the hydrides on mixing at room temperature was found. However, the films were predominantly amorphous. The film growth rate was found to depend on the concentration of alkyl boron compound and was essentially constant when TEB and AsH3 were pyrolyzed over the temperature range 550 C to 900 C. The films were found to contain mainly carbon impurities (the amount varying with growth temperature), some oxygen, and were highly stressed and bowed on Si substrates, with some crazing evident in thin (2 micron) B-P and thick (5 micron) B-As films. The carbon level was generally higher in films grown using TEB as the boron source. Films grown from PH3 and TMB showed a higher carbon content than those grown from AsH3 and TMB. Based on their B/As and B/P ratios, films with nominal compositions B sub12-16 As2 and B sub1.1-1.3 P were grown using TMB as the boron source.

  7. Influence of Both Cooling Rate and TeO2 Addition on the Properties of YBCO Superconductor

    NASA Astrophysics Data System (ADS)

    Ahmed, Yasser Momtaz Zaki; Hassan, Mervat Said; Abd-Elatif, Hassan

    2016-12-01

    Composite of superconducting system YBCO-TeO2 was synthesized utilizing solid-state reaction technique. Different weight percentages of TeO2 were mixed with a basic mixture [YBCO] for the synthesis of [YBa2Cu3O7- y ]1- x (TeO2) x composites. These mixtures were sintered at 1213 K (940 °C) for 24 hours and the samples cooled down by two different ways. The first way carried out via slowly cooling in furnace with the rate of 274 K/min to 275 K/min (1 °C/min to 2 °C/min) and the second one is quenching in oxygen gas. The XRD analysis showed that YBCO orthorhombic phase is the major phase appeared in all samples with different TeO2 content regardless of the cooling way. Additionally, minor unknown secondary phases appeared and enlarged with increasing TeO2 addition. Although quenched samples showed a phase difference between the sample's outer surface (orthorhombic) and its interior (tetragonal), the slowly cooled one did not clearly show such distinction. Moreover, doping YBCO with TeO2 leads to increase in the sample bulk density and reduction in their degradation degree in the wet atmosphere.

  8. Proximity Effect in Gold-Coated YBa2Cu3O7-δ Films Studied by Scanning Tunneling Spectroscopy

    NASA Astrophysics Data System (ADS)

    Sharoni, Amos; Koren, Gad

    2005-03-01

    Scanning tunneling microscopy and spectroscopy measurements were performed on proximity systems of the high temperature superconductor YBa2Cu3O7-δ (YBCO) covered by a normal gold layer of various thicknesses. Tunneling spectroscopy of gold layers overcoating c-axis YBCO films reveals proximity-induced gap structures. The gap size reduces exponentially with the distance from a-axis facets, indicating that the proximity effect is primarily due to the (100) YBCO facets. The normal penetration depth, ξn, is in agreement with estimations for a dirty limit proximity system[1]. The proximity effect changes considerably for (110)YBCO/Au bilayers. While proximity-induced mini-gaps rarely appear in the Au layer, the Andreev bound states, clearly penetrate into the metal. Zero bias conductance peaks are measured on Au layers thinner than 7 nm with a magnitude similar to those detected on the bare superconductor films. The peaks then decay abruptly with Au thickness and disappear above 10 nm. This length is shorter than the normal coherence length and corresponds to the (ballistic) mean free path[2]. ^1Sharoni A. et al. Phys. Rev. Lett. 92 017003 (2004). ^2Asulin I. et al. Phys. Rev. Lett. 93, 157001 (2004).

  9. Deposition of high quality YBa2Cu3O(7-delta) thin films over large areas by pulsed laser ablation with substrate scanning

    NASA Technical Reports Server (NTRS)

    Davis, M. F.; Wosik, J.; Forster, K.; Deshmukh, S. C.; Rampersad, H. R.

    1991-01-01

    The paper describes thin films deposited in a system where substrates are scanned over areas up to 3.5 x 3.5 cm through the stationary plume of an ablated material defined by an aperture. These YBCO films are deposited on LaAlO3 and SrTiO3 substrates with the thickness of 90 and 160 nm. Attention is focused on the main features of the deposition system: line focusing of the laser beam on the target; an aperture defining the area of the plume; computerized stepper motor-driven X-Y stage translating the heated sampler holder behind the plume-defining aperture in programmed patterns; and substrate mounting block with uniform heating at high temperatures over large areas. It is noted that the high degree of uniformity of the properties in each film batch illustrates that the technique of pulsed laser deposition can be applied to produce large YBCO films of high quality.

  10. Thin films of gallium arsenide on low-cost substrates. Final technical report, July 5, 1976-December 5, 1978

    SciTech Connect

    Ruth, R.P.; Dapkus, P.D.; Dupuis, R.D.; Johnson, R.E.; Moudy, L.A.; Yang, J.J.; Yingling, R.D.

    1980-03-01

    The MO-CVD technique was applied to the growth of thin films of GaAs and GaAl As on inexpensive polycrystalline or amorphous substrate materials (primarily glasses and metals) for use in fabrication of large-area low-cost photovoltaic device structures. Trimethylgallium, arsine, and trimethylaluminum are mixed in appropriate concentrations at room temperature in the gaseous state and pyrolyzed at the substrate, which is heated in a vertical reactor chamber to temperatures of 700 to 750/sup 0/C, to produce the desired film composition and properties. Studies of the properties of grain boundaries in polycrystalline GaAs films by the use of transport measurements as a function of temperature indicated that the grain boundary regions are depleted of majority carriers by a large density of neutral traps at the grain boundary interface, causing a barrier to majority carrier flow in the material. Schottky-barrier solar cells of approx. 3 percent efficiency (simulated AM0 illumination, no AR coating) were demonstrated on thin-film polycrystalline GaAs n/n/sup +/ structures on Mo sheet, Mo film/glass, and graphite substrates. Substantial enhancement of average grain size in polycrystalline MO-CVD GaAs films on Mo sheet was obtained by the addition of HCl to the growth atmosphere during deposition. Extensive investigation of polycrystalline thin-film p-n junctions indicated that the forward voltage of such devices is apparently limited to 0.5 to 0.6V. A laboratory-type deposition apparatus for the formation of TiO/sub 2/ antireflection (AR) coatings by pyrolysis of titanium isopropoxide was assembled and tested. Detailed analyses were made of the materials and labor costs involved in the laboratory-scale fabrication of MO-CVD thin-film GaAs solar cells. Details are presented. (WHK)

  11. High temperature superconducting films and multilayers for electronics

    NASA Astrophysics Data System (ADS)

    Gavaler, John R.; Talvacchio, John

    1994-04-01

    The overall objective of this program was to develop a materials and fundamental device base for high-transition-temperature superconducting (HTS) electronics capable of operating at greater than 50K. Progress is reported on four tasks which address problems fundamental to the understanding of the superconducting state in HTS films, the application of HTS films in passive microwave circuits, the realization of HTS digital electronics, and the development of new superconducting devices. Large-area epitaxial YBCO films with low RF losses developed under this program and techniques for depositing them on both sides of single-crystal substrates were used in other Westinghouse and government-funded programs to develop HTS channelized filterbanks, delay lines, UHF antenna matching networks, and low-phase-noise resonators. An understanding was achieved of the role of oxygenation during film growth and the effect of film microstructure on RF losses. For HTS digital circuit fabrication, both active devices step-edge and edge-type YBCO Josephson junctions and trilayer BKBO junctions and passive structures were developed, such as crossovers, vias, and contacts. These capabilities were transfered to other Westinghouse and government-funded programs which demonstrated the first HTS SFQ circuits and SQUID's with integrated ground planes.

  12. Preparation of High-Jc YBa2Cu3O7-y Films on CeO2-Buffered Yttria-Stabilized Zirconia Substrates by Fluorine-Free Metalorganic Deposition

    NASA Astrophysics Data System (ADS)

    Tsukada, Kenichi; Furuse, Mitsuho; Sohma, Mitsugu; Manabe, Takaaki; Yamaguchi, Iwao; Kondo, Wakichi; Fuchino, Shuichiro; Kumagai, Toshiya

    2005-07-01

    Epitaxial YBa2Cu3O7-y (YBCO) films have successfully been prepared by fluorine-free metalorganic deposition on yttria-stabilized zirconia (YSZ) substrates with an evaporated CeO2 buffer layer. The YBCO films, prepared using a metal acetylacetonate-based coating solution, were highly (001)-oriented by X-ray diffraction θ-2θ scanning and φ scanning. The 0.21-μm-thick YBCO film demonstrated a high superconducting transition temperature, Tc=90.1 K, and high critical current densities with an average in excess of 4 MA/cm2 at 77 K using an inductive method. Transport critical current (Ic) was also measured by a standard four-terminal technique; the Ic value reached 185 A in a 2.5-cm-wide current path formed on a 5-cm-diameter film. These excellent properties are attributed to the small in-plane fluctuation due to high epitaxy of the YBCO films, which resulted from good matching of the crystal structure, lattice parameter and thermal expansion coefficient among the YBCO film, CeO2 buffer layer and YSZ substrate, as well as from the smooth and uniform surface morphology, i.e., average roughness = 0.34 nm, of the CeO2 buffer layer. The present deposition conditions, i.e., 700°C and p(O2)=4× 10-2 Pa, activated by radio frequency plasma at 20 W, are valid for the growth of such CeO2(100) buffer layers on YSZ substrates.

  13. Tb and Ce Doped Y123 Films Processed by Pulsed Laser Deposition

    DTIC Science & Technology

    2004-05-01

    onto SrTiO3 single crystal substrates by pulsed laser ablation. Doped YBCO films were characterized for Tc, magnetic field dependence of Jc (at 77 K...AFRL-PR-WP-TP-2006-221 Tb AND Ce DOPED Y123 FILMS PROCESSED BY PULSED LASER DEPOSITION Joseph W. Kell, Timothy J. Haugan, Mary Frances Locke...From - To) 05/10/2003 — 05/10/2004 4. TITLE AND SUBTITLE Tb AND Ce DOPED Y123 FILMS PROCESSED BY PULSED LASER DEPOSITION . 5a. CONTRACT NUMBER In

  14. Formation of the YBa2Cu2NbOy Phase in Thin Films (POSTPRINT)

    DTIC Science & Technology

    2010-03-01

    addition of V2O5 and Nb2O5 into YBCO thin films . Additionally, recent initial results have demonstrated the potential use of YBa2Cu3–xNbxOy (YBCNxO) as a...S.C. Purandare: Effect of Nb2O5 and V2O5 addition on the superconducting properties of YBa2Cu3O(y) thin films . NASA Conf. Proc. 3290, 241 (1994). 9. S...AFRL-RZ-WP-TP-2010-2086 FORMATION OF THE YBa2Cu2NbOy PHASE IN THIN FILMS (POSTPRINT) Robert A. Wheeler UES, Inc. Srinivas Sathiraju

  15. Process for forming epitaxial perovskite thin film layers using halide precursors

    DOEpatents

    Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

    2001-01-01

    A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

  16. XPS-nanocharacterization of organic layers electrochemically grafted on the surface of SnO2 thin films to produce a new hybrid material coating

    NASA Astrophysics Data System (ADS)

    Drevet, R.; Dragoé, D.; Barthés-Labrousse, M. G.; Chaussé, A.; Andrieux, M.

    2016-10-01

    This work presents the synthesis and the characterization of hybrid material thin films obtained by the combination of two processes. The electrochemical grafting of organic layers made of carboxyphenyl moieties is carried out from the reduction of a diazonium salt on tin dioxide (SnO2) thin films previously deposited on Si substrates by metal organic chemical vapor deposition (MOCVD). Since the MOCVD experimental parameters impact the crystal growth of the SnO2 layer (i.e. its morphology and its texturation), various electrochemical grafting models can occur, producing different hybrid materials. In order to evidence the efficiency of the electrochemical grafting of the carboxyphenyl moieties, X-ray Photoelectron Spectroscopy (XPS) is used to characterize the first nanometers in depth of the synthesized hybrid material layer. Then three electrochemical grafting models are proposed.

  17. The anti-surfactant effect of silane on the facets-controlled growth of GaN nanorods by MOCVD

    NASA Astrophysics Data System (ADS)

    Li, J. Z.; Chen, Z. Z.; Li, S. F.; Jiao, Q. Q.; Feng, Y. L.; Jiang, S. X.; Chen, Y. F.; Yu, T. J.; Shen, B.; Zhang, G. Y.

    2016-08-01

    N-polar GaN nanorods were selective area grown by continuous mode metalorganic chemical vapor deposition (MOCVD) under a Ga-rich and high silane flow condition. The interruption comparing with continuous supply of silane flow was performed to study the role of silane flux. High resolution scanning electron microscopy (SEM), x-ray diffraction (XRD), cathodoluminescence (CL) and x-ray photoelectron spectroscopy (XPS) measurements were performed. The enhanced vertical growth rate was achieved as 42 μm/h and sharp smooth m-plane, r-plane and c-plane facets were obtained for the nanorods with high silane flux. Sisbnd N bonds were clarified to be formed on the surface of the nanorod by XPS spectra. The silane acting as anti-surfactant was suggested to explain the diffusion and incorporation of the species on the facets of GaN nanorods.

  18. Species transport and chemical reaction in a MOCVD reactor and their influence on the GaN growth uniformity

    NASA Astrophysics Data System (ADS)

    Zhang, Zhi; Fang, Haisheng; Yao, Qingxia; Yan, Han; Gan, Zhiyin

    2016-11-01

    Fluid flow, heat transfer, and species transport with chemical reactions have been investigated for gallium nitride (GaN) growth in a commercial metal-organic chemical vapor deposition (MOCVD) reactor. Both the growth rate and the growth uniformity are investigated zone by zone, as the wafers are divided into three zones/groups according to their distances to the susceptor center. The results show that species transport in the reactor is affected by the inlet conditions, i.e., the premixed or non-premixed inlet, the inlet temperature, the total gas flow rate, and the V/III component ratio, and reveal that the premixed inlet condition is preferred for uniform growth. Especially, a large total flow rate or a low V/III ratio results in both increase of the growth rate and improvement of the growth uniformity.

  19. DLTS and MCTS analysis of the influence of growth pressure on trap generation in MOCVD GaN

    NASA Astrophysics Data System (ADS)

    Shah, P. B.; Dedhia, R. H.; Tompkins, R. P.; Viveiros, E. A.; Jones, K. A.

    2012-12-01

    We demonstrate with DLTS and MCTS how changing growth pressure during MOCVD growth of GaN affects the majority and minority carrier trap signatures. Results indicate which specific traps are most strongly connected with the increased carbon concentration that lower growth pressure has led to. Carbon concentration is also verified with SIMS measurements. DLTS and MCTS measurements, related to carrier thermalization from traps, made up to a temperature of 450 K have found four majority carrier and two minority carrier traps. Using a lower growth pressures, at which greater incorporation of carbon is possible, has lead to larger concentrations of most of the traps; just as others have observed. However, the trap at EC - 0.48 eV is the least affected by the growth pressure. We relate all the traps found from DLTS and MCTS to those identified by others and mention the constituent atoms that the research community identifies with these traps.

  20. Driving Down HB-LED Costs. Implementation of Process Simulation Tools and Temperature Control Methods of High Yield MOCVD Growth

    SciTech Connect

    Quinn, William

    2012-04-30

    The overall objective of this multi-faceted program is to develop epitaxial growth systems that meet a goal of 75% (4X) cost reduction in the epitaxy phase of HB-LED manufacture. A 75% reduction in yielded epitaxy cost is necessary in order to achieve the cost goals for widespread penetration of HB-LED's into back-lighting units (BLU) for LCD panels and ultimately for solid-state lighting (SSL). To do this, the program will address significant improvements in overall equipment Cost of Ownership, or CoO. CoO is a model that includes all costs associated with the epitaxy portion of production. These aspects include cost of yield, capital cost, operational costs, and maintenance costs. We divide the program into three phases where later phases will incorporate the gains of prior phases. Phase one activities are enabling technologies. In collaboration with Sandia National Laboratories we develop a Fluent-compatible chemistry predictive model and a set of mid-infrared and near-ultraviolet pyrometer monitoring tools. Where previously the modeling of the reactor dynamics were studied within FLUENT alone, here, FLUENT and Chemkin are integrated into a comprehensive model of fluid dynamics and the most advanced transport equations developed for Chemkin. Specifically, the Chemkin model offered the key reaction terms for gas-phase nucleation, a key consideration in the optimization of the MOCVD process. This new predictive model is used to design new MOCVD reactors with optimized growth conditions and the newly developed pyrometers are used monitor and control the MOCVD process temperature to within 0.5°C run-to-run and within each wafer. This portion of the grant is in collaboration with partners at Sandia National Laboratories. Phase two activities are continuous improvement projects which extend the current reactor platform along the lines of improved operational efficiency, improved systems control for throughput, and carrier modifications for increased yield

  1. Effect of 100 MeV Ni9+ ion irradiation on MOCVD grown n-GaN

    NASA Astrophysics Data System (ADS)

    Suresh Kumar, V.; Kumar, J.; Puviarasu, P.; Munawar Basha, S.; Kanjilal, D.; Asokan, K.

    2011-11-01

    Metal-organic chemical vapor deposition (MOCVD) grown n-type Gallium nitride (GaN) has been irradiated with 100 MeV Ni9+ ions at room temperature. Atomic force microscopy (AFM) images show the nano-clusters' formation upon irradiation and the irradiated GaN surface roughness increases with the increasing ion fluences. High-resolution X-ray diffraction (HR-XRD) analysis reveals the formation of Ga2O3 due to the interface mixing of GaN/Al2O3 upon irradiation. FWHM values of GaN (0 0 0 2) increases due to the lattice disorder. Photoluminescence studies show reduced band edge emission and yellow luminescence (YL) intensity with the increasing ion fluences. Change in the band gap energy between 3.38 and 3.04 eV was measured by UV-visible optical absorption spectrum on increasing the ion fluences.

  2. Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Agarwal, Anchal; Gupta, Chirag; Enatsu, Yuuki; Keller, Stacia; Mishra, Umesh

    2016-12-01

    Controlled n-type doping down to 2 × 1015 cm-3 was achieved in GaN grown on sapphire by MOCVD by balancing the n-type Si doping with respect to the background carbon and oxygen levels. A dopant level of ˜1 × 1016 cm-3 displayed a very high mobility of 899 cm2 V-1 s-1. High electron mobility in the drift layer leads to a low on resistance and high current densities without compromising on any other properties of the device. Schottky diodes processed on these low n-type layers showed low R on values, while the p-n diodes display high reverse breakdown voltages in excess of 1000 V for 8 μm thick drift layers with a doping of 2 × 1015 cm-3.

  3. High quality (In)GaN films on homoepitaxial substrates

    NASA Astrophysics Data System (ADS)

    Liu, Li; Zhang, Yong; Yin, Yian

    2017-02-01

    High quality GaN and InGaN epitaxial thin films were deposited by metal organic chemical vapor deposition (MOCVD). Two sets of thin film samples were prepared by varying the substrates and temperatures under a proper condition for achieving better optical properties. The morphological, crystalline quality and optical property of epitaxial layers were characterized by atomic force microscope (AFM), X-ray diffraction (XRD), photoluminescence (PL) and Raman spectra, respectively. It was found that the epitaxial layers grown on GaN homoepitaxial substrate have higher quality than those grown on sapphire substrate. The root mean square (RMS) of GaN film and InGaN film in AFM morphological were 0.5 nm, 2.7 nm respectively. The full width at half maximum (FWHM) of (102) in GaN film on GaN substrate was 33arcsec and the FWHM of (002) in InGaN film on GaN substrate was 50.58arcsec by XRD. The PL peaks of GaN film and InGaN film were 361 nm, 458 nm respectively. The E2 (high) of GaN film and InGaN film in Raman were both 567.08 cm-1.

  4. (abstract) All Epitaxial Edge-geometry SNS Devices with Doped PBCO and YBCO Normal Layers

    NASA Technical Reports Server (NTRS)

    Barner, J. B.; Hunt, B. D.; Foote, M. C.

    1995-01-01

    We will present our results on tapered-edge-geometry SNS weak link fabricated from c-axis oriented base-, counterelectrode and normal layers using a variety of processing conditions. To date, we have employed a variety of different normal materials (Co-doped YBCO, Y-doped PBCO, Ca-doped PBCO). We have been examining the junction fabrication process in detail and we will present our methods. In particular, we have been examining both epitaxial and non-epitaxial milling mask overlayers and we will present a comparison of both methods. These devices behave similar to the expectations of the resisively shunted junction model and conventional SNS proximity effect models but with some differences which will be discussed. We will present the detailed systematics of our junctions including device parameters versus temperature, rf and dc magnetic response for the various processing conditions.

  5. Theory of the vortex matter transformations in high-Tc superconductor YBCO.

    PubMed

    Li, Dingping; Rosenstein, Baruch

    2003-04-25

    Flux line lattice in type II superconductors undergoes a transition into a "disordered" phase such as vortex liquid or vortex glass, due to thermal fluctuations and random quenched disorder. We quantitatively describe the competition between the thermal fluctuations and the disorder using the Ginzburg-Landau approach. The following T-H phase diagram of YBCO emerges. There are just two distinct thermodynamical phases, the homogeneous and the crystalline one, separated by a single first order transition line. The line, however, makes a wiggle near the experimentally claimed critical point at 12 T. The "critical point" is reinterpreted as a (noncritical) Kauzmann point in which the latent heat vanishes and the line is parallel to the T axis. The magnetization, the entropy, and the specific heat discontinuities at melting compare well with experiments.

  6. A new method to detect the vortex glass phase and its evidence in YBCO.

    PubMed

    Adesso, M G; Polichetti, M; Pace, S

    2008-09-24

    The evidence of the vortex glass phase has been obtained by analysing the nonlinear magnetic response of type-II superconductors. The method introduced here is based on a combined frequency dependence analysis of the real and imaginary part of the 1st and 3rd harmonics of the AC magnetic susceptibility. The analysis has been performed by taking into account both the components and the Cole-Cole plots (i.e. the imaginary part as a function of the real part). Numerical simulations have been used to identify the fingerprints of the magnetic behaviour in the vortex glass phase. These characteristics allowed the vortex glass phase to be distinguished from the other disordered phases, even those showing similar electrical properties. Finally, this method has been successfully applied to detecting the vortex glass phase in an YBCO bulk melt-textured sample.

  7. 2D SQIF arrays using 20 000 YBCO high R n Josephson junctions

    NASA Astrophysics Data System (ADS)

    Mitchell, E. E.; Hannam, K. E.; Lazar, J.; Leslie, K. E.; Lewis, C. J.; Grancea, A.; Keenan, S. T.; Lam, S. K. H.; Foley, C. P.

    2016-06-01

    Superconducting quantum interference filters (SQIFs) have been created using two dimensional arrays of YBCO step-edge Josephson junctions connected together in series and parallel configurations via superconducting loops with a range of loop areas and loop inductances. A SQIF response, as evidenced by a single large anti-peak at zero applied flux, is reported at 77 K for step-edge junction arrays with the junction number N = 1 000 up to 20 000. The SQIF sensitivity (slope of peak) increased linearly with N up to a maximum of 1530 V T-1. Array parameters related to geometry and average junction characteristics are investigated in order to understand and improve the SQIF performance in high temperature superconducting arrays. Initial investigations also focus on the effect of the SQUID inductance factor on the SQIF sensitivity by varying both the mean critical current and the mean inductance of the loops in the array. The RF response to a 30 MHz signal is demonstrated.

  8. Microstructure development in repeated zone refining of microwave-derived YBCO bulk compacts

    NASA Astrophysics Data System (ADS)

    Varma, Hari K.; Warrier, Krishna G.; Kumar, Viswanathan A.; Mani, Themanam V.; Pillai, Sankara P. G. K.; Damodaran, Alathur D.

    1992-05-01

    YBCO precursor particulates have been prepared using microwave decomposition of a mixture of yttrium, barium and copper nitrates in a microwave oven having the frequency 2.45 GHz and 600 W power, within as short as 240 seconds. This precursor, upon further compaction into strips of 10 mm x 60 mm x 1 mm and sintering at 940 C for 5 h, attained 90 percent density. Such strips are subjected to repeated zone refining operations in a zone refining system having a three-zone furnace at relatively high speeds of 30 mm/h. The development of microstructure in such samples from the as-sintered condition through the various steps has been presented. A microstructure having uniformly oriented grains in the a-b plane throughout the bulk of the sample could be obtained by three repeated zone refining operations. The possibility of introducing a faster movement of the melting zone compared to earlier reports is highlighted.

  9. Powder metallurgy for the fabrication of bi-axially textured Ni tapes for YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Lee, Dong-Wook; Ki Ji, Bong; Hyung Lim, Jun; Jung, Choong-Hwan; Joo, Jinho; Park, Soon-Dong; Jun, Byung-Hyuk; Hong, Gye-Won; Kim, Chan-Joong

    2003-04-01

    Bi-axially textured Ni tapes for YBCO coated conductors were fabricated by forming, sintering, cold rolling and heat treatment of Ni powder compacts. The powder metallurgy process consists of filling of fine Ni powders in a rubber mold, cold isostatical pressing in a water chamber and sintering of the powder compacts. The sintered compacts were cold-rolled and made into tapes with a thickness of 100 micron and then heat-treated at 1000 °C for various time periods for the development of the (2 0 0) texture. The (2 0 0) texture of Ni tape was successfully formed through the optimization of the recrystallization heat treatment condition for the cold rolled Ni tapes. The full width half maximum of the Ni tapes was 8-10° and the atomic force microscopy surface roughness was 3-5 nm.

  10. Grain boundary degradation of YBCO superconductors sintered in CO{sub 2}-containing atmospheres

    SciTech Connect

    Balachandran, U.; Merkle, K.L.; Mundy, J.N.; Gao, Y.; Zhang, C.; Xu, D.; Selvaduray, G.

    1993-11-01

    The transport critical current density (J{sub c}) of YBCO superconductors decreased with increasing CO{sub 2} partial pressure in the sintering atmosphere and ultimately reached zero, even though magnetization measurements showed that the bulk of the samples with zero J{sub c} remained superconducting. The microstructure and composition of the samples was investigated by high resolution transmission electron microscopy and secondary-ion mass spectroscopy (SIMS). Microbeam SIMS indicated carbon segregation at grain boundaries (GBs). Approximately 10% of the GBs were coated with a thin layer of a second phase, deduced to be BaCuO{sub 2} and BaCu{sub 2}O{sub 2}. Near some grain boundaries, the structure was tetragonal within several tens of nm of the boundaries. The degradation of J{sub c} is discussed in terms of the partial pressure of CO{sub 2} and the processing temperatures. Detailed examination of GB microstructures is given in this paper.

  11. Preparation of high grade YBCO powders and pellets through the glycerol route

    NASA Astrophysics Data System (ADS)

    Kamat, R. V.; Vittal Rao, T. V.; Pillai, K. T.; Vaidya, V. N.; Sood, D. D.

    1991-10-01

    Superconducting powders and pellets of Y-Ba-Cu-O were prepared by a new solution route. Nitrates of Y, Ba and Cu were heated with a controlled amount of glycerol to get a dry powder which on suitable heat treatment gave high grade YBCO powder/pellets. Characterisation was done by X-ray diffractometry, thermogravimetry, differential thermal analysis and also by measuring the surface area, carbon-content, bulk-density, transition temperature and the critical current. The pellets could be densified to 94% theoretical density (TD) and had a superconducting transition width of 1 K. The critical current densities were in the range of 200-500 A/cm 2.

  12. Fabrication of a good-quality single grain YBCO sample through the control of seed crystals

    SciTech Connect

    Kim, C.J.; Hong, G.W.; Jee, Y.A.; Han, Y.H.; Han, S.C.; Sung, T.H.

    1999-09-01

    The authors investigated the growth mode of YBa{sub 2}Cu{sub 3}O{sub 7{minus}y} (Y123) grains and its effect on the levitation forces and trapped magnetic field of top-seeded melt processed YBCO samples. When a slab-like Sm-seed was used, undesirable subsidiary Y123 grains were formed, while the formation of the subsidiary Y123 grains was suppressed and a nearly single Y123 grain grew when a thick and wide seed was used. The formation of the subsidiary Y123 grains decreased the levitation forces and trapped magnetic field, due to the presence of grain boundaries with weak link characteristics.

  13. Calibration of Hall sensor array for critical current measurement of YBCO tape with ferromagnetic substrate

    NASA Astrophysics Data System (ADS)

    Zhu, Yunpeng; Wang, Gang; Liu, Liyuan; Yang, Xinsheng; Zhao, Yong

    2015-12-01

    HAS (Hall sensor array) is a powerful tool to detect the uniformity of HTS (high temperature superconductor) tape through mapping the distribution of remanent or shielding field along the surface of the tape. However, measurement of HTS tape with ferromagnetic parts by HSA is still an issue because the ferromagnetic substrate has influence on the magnetic field around the HTS layer. In this work, a continuous HSA system has been designed to measure the critical current of the YBCO tape with ferromagnetic substrate. The relationship between the remanent field and critical current was calibrated by the finite element method. The result showed that the HSA is an effective method for evaluating the critical current of the HTS tape with ferromagnetic substrate.

  14. Magnetic levitation and its application for education devices based on YBCO bulk superconductors

    NASA Astrophysics Data System (ADS)

    Yang, W. M.; Chao, X. X.; Guo, F. X.; Li, J. W.; Chen, S. L.

    2013-10-01

    A small superconducting maglev propeller system, a small spacecraft model suspending and moving around a terrestrial globe, several small maglev vehicle models and a magnetic circuit converter have been designed and constructed. The track was paved by NdFeB magnets, the arrangement of the magnets made us easy to get a uniform distribution of magnetic field along the length direction of the track and a high magnetic field gradient in the lateral direction. When the YBCO bulks mounted inside the vehicle models or spacecraft model was field cooled to LN2 temperature at a certain distance away from the track, they could be automatically floating over and moving along the track without any obvious friction. The models can be used as experimental or demonstration devices for the magnetic levitation applications.

  15. Preparing Pb(Zr,Ti)O3 films less than 100 nm thick by low-temperature metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Nagai, A.; Morioka, H.; Asano, G.; Funakubo, H.; Saiki, A.

    2005-04-01

    Polycrystalline Pb(Zr ,Ti)O3 (PZT) films 70-80nm thick on (111)Ir/TiO2/SiO2/Si substrates were prepared at 415°C by metalorganic chemical vapor deposition (MOCVD). At 3V, the remanent polarization (Pr) of the as-deposited films was approximately 22μC/cm2. Inserting PbTiO3 seeds between the PZT films and Ir bottom electrodes improved the crystallinity of the films markedly but improved their ferroelectric properties only slightly. Low-temperature postannealing, on the other hand, even at 400°C (i.e., below the deposition temperature), improved Pr values and hysteresis loop shapes without obviously improving the crystallinity of the films. The electrical properties were improved even more when the films were annealed at 500°C. These results suggest that the low-temperature processing and sub-100-nm film thickness needed for making three-dimensionally structured ferroelectric capacitors can be obtained by using low-temperature MOCVD to deposit PZT films, and then annealing those films at a temperature no greater than 500°C.

  16. Numerical simulation and analysis of single grain YBCO processed from graded precursor powders

    NASA Astrophysics Data System (ADS)

    Zou, J.; Ainslie, M. D.; Hu, D.; Zhai, W.; Devendra Kumar, N.; Durrell, J. H.; Shi, Y.-H.; Cardwell, D. A.

    2015-03-01

    Large single-grain bulk high-temperature superconducting materials can trap high magnetic fields in comparison with conventional permanent magnets, making them ideal candidates to develop more compact and efficient devices, such as actuators, magnetic levitation systems, flywheel energy storage systems and electric machines. However, macro-segregation of Y-211 inclusions in melt processed Y-Ba-Cu-O (YBCO) limits the macroscopic critical current density Jc of such bulk superconductors, and hence, the potential trapped field. Recently, a new fabrication technique with graded precursor powders has been developed, which results in a more uniform distribution of Y-211 particles, in order to further improve the superconducting properties of such materials. In order to develop this graded fabrication technique further, a 3D finite-element numerical simulation based on the H-formulation is performed in this paper. The trapped field characteristics of a graded YBCO sample magnetized by the field cooling method are simulated to validate the model, and the simulation results are consistent with the experimental measurements. In addition, the influence of the graded technique and various graded Jc distributions for pulsed field magnetization, recognized widely as a practical route for magnetizing samples in bulk superconductor applications, is also investigated, with respect to the trapped field and temperature profiles of graded samples. This modelling framework provides a new technique for assessing the performance of various sizes and geometries of graded bulk superconductors, and by adjusting the Y-211, and hence Jc, distribution, samples can be fabricated based on this concept to provide application-specific trapped field profiles, such as the generation of either a high magnetic field gradient or a high level of uniformity for the traditionally conical, trapped field profile.

  17. Growth of II-VI thin-films from single-source precursors based on sterically encumbered sitel ligands

    SciTech Connect

    Arnold, J.; Seligson, A.L.; Walker, J.M.; Bourret, E.D.; Bonasia, P.J.

    1992-04-01

    We have developed a new route to MOCVD of II-VI compounds based on the use of novel single-source precursors in which the II-VI elements are combined at the molecular level in a single covalent compound. We have prepared and fully characterized a number of new derivatives of zinc, cadmium and mercury incorporating large, sterically demanding tellurolate ligands of general formula: M(sitel){sub 2} where sitel = -TeSi(SiMe{sub 3}){sub 3}. The crystalline compounds are relatively volatile and are easily manipulated under nitrogen. Several of these compounds have been tested for their suitability as precursors in the MOCVD process. Clean pyrolysis reactions and deposition of thin films were achieved. The stoichiometry of the pyrolysis reaction has been determined by analysis of the reaction by-products.

  18. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: A comparative study of YBa2Cu3O7-δ/YSZ bilayer films deposited on silicon-on-insulator substrates with and without HF pretreatment

    NASA Astrophysics Data System (ADS)

    Wang, Ping; Li, Jie; Chen, Ying-Fei; Li, Shao; Wang, Jia; Xie, Ting-Yue; Zheng, Dong-Ning

    2009-04-01

    Highly epitaxial YBa2Cu3O7-δ (YBCO) and yttria-stabilized zirconia (YSZ) bilayer thin films have been deposited on silicon-on-insulator (SOI) substrates by using in situ pulsed laser deposition (PLD) technique. In the experiment, the native amorphous SiO2 layers on some of the SOI substrates are removed by dipping them in a 10% HF solution for 15s. Comparing several qualities of films grown on substrates with or without HF pretreatment, such as thin film crystallinity, general surface roughness, temperature dependence of resistance, surface morphology, as well as average crack spacing and crack width, naturally leads to the conclusion that preserving the native SiO2 layer on the surface of the SOI substrate can not only simplify the experimental process but can also achieve fairly high quality YSZ and YBCO thin films.

  19. Microscopic Evidence of a Crossover to a Low-Temperature Intermediate Valence State in YbCo2Zn20

    NASA Astrophysics Data System (ADS)

    Mito, Takeshi; Hara, Hiroki; Ishida, Takuma; Nakagawara, Keitaro; Koyama, Takehide; Ueda, Koichi; Kohara, Takao; Ishida, Kenji; Matsubayashi, Kazuyuki; Saiga, Yuta; Uwatoko, Yoshiya

    2013-10-01

    The low-temperature properties of YbCo2Zn20, which shows a giant specific heat at low temperatures, have been studied by the 59Co-nuclear quadrupole resonance (NQR) technique. The measurement of spin lattice relaxation rate reveals that Yb 4f-electrons unusually persist in a well-localized regime down to at least 0.3 K without ordering magnetically. With further lowering temperature, NQR frequency decreases below 0.2 K reflecting the low-temperature Fermi liquid state, even suggesting a crossover to an intermediate valence state in close proximity to the localized--delocalzied transition. We also compare the observed unique properties of YbCo2Zn20 with those of YbRh2Si2, which shows antiferromagnetic ordering at extremely low temperature.

  20. A simple multi-seeding approach to growth of large YBCO bulk with a diameter above 53 mm

    NASA Astrophysics Data System (ADS)

    Tang, Tian-wei; Wu, Dong-jie; Wu, Xing-da; Xu, Ke-Xi

    2015-12-01

    A successful simple multi-seeding approach to growing large size Y-Ba-C-O (YBCO) bulks is reported. Compared with the common single seeding method, our multi-seeding method is more efficient. By using four SmBa2Cu3O7-δ (Sm-123) seeds cut from a large size Sm-Ba-C-O (SmBCO) single domain, large YBCO samples up to 53 mm in diameter could be produced successfully and 100 mm diameter samples can also be grown. Experimental results show that the processing time can be shortened greatly by using this new approach, and the superconducting properties can also be improved. The Hall probe mapping shows that the trapped field distribution of 53 mm diameter multi-seeded sample is homogeneous and the peak value is up to 0.53 T. The magnetic levitation force density reaches to 14.7 N/cm2 (77 K, 0.5 T).

  1. Comparative study of deep levels in HVPE and MOCVD GaN by combining O-DLTS and pulsed photo-ionization spectroscopy

    NASA Astrophysics Data System (ADS)

    Pavlov, J.; Čeponis, T.; Gaubas, E.; Meskauskaite, D.; Reklaitis, I.; Vaitkus, J.; Grigonis, R.; Sirutkaitis, V.

    2015-12-01

    Operational characteristics of sensors made of GaN significantly depend on technologically introduced defects acting as rapid traps of excess carriers which reduce charge collection efficiency of detectors. In order to reveal the prevailing defects in HVPE and MOCVD grown GaN, the carrier lifetime and photo-ionization spectra have been simultaneously measured by using microwave probed photo-conductivity transient technique. Several traps ascribed to impurities as well as vacancy and anti-site type defects have been identified in HVPE GaN material samples by combining photo-ionization and electron spin resonance spectroscopy. The optical deep level transient spectroscopy technique has been applied for spectroscopy of the parameters of thermal emission from the traps ascribed to technological defects in the Schottky barrier terrace structures fabricated on MOCVD GaN.

  2. DC and High Frequency Characterization of Metalorganic Chemical Vapor Deposition (MOCVD) Grown InP/InGaAs PNP Heterojunction Bipolar Transistor

    NASA Astrophysics Data System (ADS)

    Cui, Delong; Hsu, Shawn S. H.; Pavlidis, Dimitris

    2002-02-01

    InP/InGaAs PNP heterojunction bipolar transistor (HBT) layers have been grown by metalorganic chemical vapor deposition (MOCVD) and devices have been fabricated using a self-aligned processing technology. A zinc-doped InP layer has been employed as the wide-bandgap emitter layer for the PNP HBT. The base layer used a 500 Å thick n-type InGaAs layer doped at 5× 1018 cm-3. Successful high frequency operation of these devices has been demonstrated. A single-emitter 1× 20 μm2 MOCVD-grown PNP InP/InGaAs HBT achieved current gain cutoff frequency (fT) of more than 11 GHz at a current density (JC) of 8.25× 104 A/cm2.

  3. Superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} thin films on polycrystalline ferrite for magnetically tunable microwave components

    SciTech Connect

    Jia, Q.X.; Findikoglu, A.T.; Arendt, P.; Foltyn, S.R.; Roper, J.M.; Groves, J.R.; Coulter, J.Y.; Li, Y.Q.; Dionne, G.F.

    1998-04-01

    Superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (YBCO) thin films with a surface resistance of 0.86 m{Omega} at 10 GHz and 76 K have been grown on polycrystalline ferrite yttrium iron garnet (YIG) substrates. The chemical and structural mismatches between YBCO and YIG are solved by using a double buffer layer of biaxially oriented yttria-stabilized zirconia (YSZ) and CeO{sub 2}, where YSZ is deposited by an ion-beam-assisted-deposition technique. The YBCO films are {ital c} axis oriented with an in-plane mosaic spread [full width at half maximum of an x-ray {phi}-scan on (103) reflection] of less than 8{degree}. The films have a superconductive transition temperature above 88 K with a transition width less than 0.3 K, giving a critical current density above 10{sup 6}A/cm{sup 2} in self field at 75 K. At 75 K in an external magnetic field of 1 T perpendicular to the film surface, the films maintain a critical current density over 2{times}10{sup 5}A/cm{sup 2}. {copyright} {ital 1998 American Institute of Physics.}

  4. Synergetic pinning centres in BaZrO3-doped YBa2Cu3O7-x films induced by SrTiO3 nano-layers

    NASA Astrophysics Data System (ADS)

    Crisan, A.; Dang, V. S.; Mikheenko, P.; Ionescu, A. M.; Ivan, I.; Miu, L.

    2017-04-01

    We report on the enhancement of critical current density (J c) and the unusual behaviour of its dependence on field orientation in YBa2Cu3O7‑x (YBCO) nanostructured films by a combination of substrate decoration with Ag nano-dots, of the incorporation of BaZrO3 (BZO) nano-particles and nano-rods, and of multilayer architecture (a thin SrTiO3 layer separating two 1.5 μm-thick YBCO layers). SrTiO3 insulating layers were 15, 30 or 45 nm thick. The highest improvement of J c in applied magnetic fields along the c-axis and smaller than 1 T occurs in the bi-layer with 30 nm-thick STO, but the influence of STO thickness is small. Our thick nanostructured films show significant improvement of J c in the magnetic field along the ab-plane direction. The presence of BZO nano-rods, ab-plane defects and nano particles of BZO and Y2O3 was observed in transmission electron microscopy (TEM) images of the film. The peculiarities of artificial pinning centres revealed in the TEM images of the nanostructured films are used to explain an unusual split of the peak in the J c dependence on the magnetic field along the ab-plane of YBCO. Effective pinning potentials in high magnetic fields have rather high values for such thick films.

  5. Growth of Bi2Te3 films and other phases of Bi-Te system by MOVPE

    NASA Astrophysics Data System (ADS)

    Kuznetsov, P. I.; Yapaskurt, V. O.; Shchamkhalova, B. S.; Shcherbakov, V. D.; Yakushcheva, G. G.; Luzanov, V. A.; Jitov, V. A.

    2016-12-01

    We have deposited films of Bi-Te system by atmospheric pressure MOVPE on (0001) Al2O3 substrates with thin ZnTe or thick GaN buffer layers at different temperatures and Te/Bi ratio in the vapor phase. As-grown films were studied by X-ray diffractometry, SEM microscopy and Raman spectroscopy. To determine the elemental composition of the films, an energy dispersive spectrometer was used. Single-phase films of Bi2Te3, Bi4Te5, BiTe, Bi10Te9, Bi4Te3, Bi3Te2 have been grown and growth parameter ranges for obtaining different phases were defined. It was found that under the same growth condition different phases of the Bi-Te system realize depending on the film's thickness. Thus, when growing of Bi2Te3 films by MOCVD method the careful control of the phase composition is required.

  6. An electron backscatter diffraction investigation of crystallographic orientations of embedded nanoparticles within melt-textured YBCO high temperature superconductors

    NASA Astrophysics Data System (ADS)

    Koblischka-Veneva, A.; Koblischka, M. R.; Babu, N. Hari; Cardwell, D. A.; Shlyk, L.; Krabbes, G.

    2006-07-01

    Microstructures of melt-textured YBCO samples with embedded nanosized particles of Y2BaCuO5 (Y-211) and Y2Ba4CuMOx (M-2411 with M = U,Zr) are analysed by means of electron backscatter diffraction (EBSD). With the recent developments of the EBSD technique, we can directly measure the crystallographic orientation of the embedded nanoparticles, employing a spatial resolution of about 40 nm. The high image quality of the Kikuchi patterns allows true three-phase (YBCO, Y-211 and M-2411) scans to be performed. The Y-211 particles do not exhibit any preferred orientation, even if their size is considerably reduced, to the 100 nm range. The size reduction reduces the negative influence of the Y-211 particles on the YBCO matrix, however. U-2411 particles, which are formed during the processing stage, do not show any orientation, and with increasing concentration, some texture develops. In contrast to this, embedded Zr-2411 particles are fully oriented in the (001) orientation according to the surrounding superconducting matrix.

  7. Role of nano and micron-sized inclusions on the oxygen controlled preform optimized infiltration growth processed YBCO superconductors

    NASA Astrophysics Data System (ADS)

    Pavan Kumar Naik, S.; Bai, V. Seshu

    2017-02-01

    In the present work, with the aim of improving the local flux pinning at the unit cell level in the YBa2Cu3O7-δ (YBCO) bulk superconductors, 20 wt% of nanoscale Sm2O3 and micron sized (Nd, Sm, Gd)2BaCuO5 secondary phase particles were added to YBCO and processed in oxygen controlled preform optimized infiltration growth process. Nano Dispersive Sol Casting method is employed to homogeneously distribute the nano Sm2O3 particles of 30-50 nm without any agglomeration in the precursor powder. Microstructural investigations on doped samples show the chemical fluctuations as annuli cores in the 211 phase particles. The introduction of mixed rare earth elements at Y-site resulted in compositional fluctuations in the superconducting matrix. The associated lattice mismatch defects have provided flux pinning up to large magnetic fields. Magnetic field dependence of current density (Jc(H)) at different temperatures revealed that the dominant pinning mechanism is caused by spatial variations of critical temperatures, due to the spatial fluctuations in the matrix composition. As the number of rare earth elements increased in the YBCO, the peak field position in the scaling of the normalized pinning force density (Fp/Fp max) significantly gets shifted towards the higher fields. The curves of Jc(H) and Fp/Fp max at different temperatures clearly indicate the LRE substitution for LRE' or Ba-sites for δTc pinning.

  8. High-speed growth of YBa2Cu3O7 - δ film with high critical temperature on MgO single crystal substrate by laser chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhao, Pei; Ito, Akihiko; Tu, Rong; Goto, Takashi

    2010-12-01

    a-axis- and c-axis-oriented YBa2Cu3O7 - δ films were prepared on a (100) MgO single crystal substrate by chemical vapor deposition enhanced by a continuous wave Nd:YAG laser. A c-axis-oriented YBCO film with a critical temperature of 89 K was prepared at a high deposition rate of 57 µm h - 1, about 2-600 times higher than that of conventional chemical vapor deposition.

  9. Multi-wafer growth of GaInAs photodetectors on 4" InP by MOCVD for SWIR imaging applications

    NASA Astrophysics Data System (ADS)

    Furlong, Mark J.; Mattingley, Mark; Lim, Sung Wook; Geen, Matthew; Jones, Wynne

    2014-06-01

    Photodiodes based on the GaInAs/InP material system responding in the 1.3-1.7 μm wavelength range are of interest in a wide range of applications, from optical power and channel monitors in telecommunication systems through to advanced night vision imaging using large format focal plane type detectors for defense and security applications. Here we report on our results of GaInAs PIN photo detector structures grown on 2", 3" and 4" InP substrates by low pressure Metalorganic Chemical Vapor Deposition (MOCVD) in both standard and new larger volume format reactor configurations. High quality, lattice matched InP/GaInAs epitaxial layers were grown and we demonstrate that when moving to larger platen configurations, high degree of thickness uniformity (<3%, FTIR), lattice mismatch (<0.1%, XRD) and compositional uniformity (<2 nm, PL) can be maintained. The surface quality of epitaxial wafers will be assessed by various surface analytical techniques. We also make comparisons with the performance of 2", 3" and 4" photodetector structures grown, this demonstrating that MOCVD production processes have been successfully scaled. We conclude by discussing the material requirements for large area infrared focal plane array photodetectors and describe how MOCVD growth technology will address industry's requirements for increasing device sizes with improved performance.

  10. Ion-beam-induced texturing in oxide thin films and its applications

    NASA Astrophysics Data System (ADS)

    Wang, Pin-Chin Connie

    1999-11-01

    Ion-beam-assisted deposition (IBAD) has been demonstrated to be one of the most promising methods to artificially control thin films' texture. Recent years, much research has been conducted to try to control the in-plane alignment in oxide films for the high Tc superconductor YBa 2Cu3O7-x (HTS YBCO) power applications. The IBAD films deposited on engineering substrate can potentially replace the single crystal substrates, enabling large area and economical applications of the YBCO film. Thus far, the focus has been on IBAD YSZ and CeO2. However, both need to be thick to achieve good in-plane alignment. This requirement makes the IBAD process too costly for production. The IBAD MgO work started at Stanford several years ago. In contrast to YSZ, we demonstrated that the MgO texture started from the nucleation stage and we were able to obtain 7° in-plane alignment in a 100A IBAD MgO film. This reduces the processing cost by orders of magnitude as compared with IBAD YSZ. We studied the MgO texture development process using in-situ RHEED and ex-situ TEM and XRD. The results showed that the IBAD MgO film formed small rectangular islands, which coalesced to form a continuous film. We discussed the MgO texture as functions of key parameters, such as ion energy, ion angle, ion beam divergence, ion-to-molecule ratio, deposition temperature, etc. The ion angle study supported the differential sputtering yield/ion channeling type of ion-selecting-texture mechanism. The results of IBAD MgO were compared with that of the IBAD YSZ, suggesting that the different crystalline structures between the two materials can be used to explain the differences. This thesis also discusses our attempt to substitute single crystal substrates with the IBAD MgO in practical systems. In the HTS YBCO application, we obtained YBCO films on alpha-SiN coated poly-Alumina with in-plane misalignment less than 4° and Jc of 2.5MA/cm2. In the magnetic spin valve device applications, we obtained Ni

  11. MOCVD growth of GaN on Si through novel substrate modification techniques

    NASA Astrophysics Data System (ADS)

    Gagnon, Jarod C.

    GaN is a semiconductor material with great potential for use in high power electronics and optoelectronics due to the high electron mobility, high breakdown voltage, high thermal stability, and large direct bandgap of GaN. Si is a desirable substrate material for GaN heteroepitaxy due to the low cost of production, large wafer sizes available, and current widespread use in the electronics industry. The growth of GaN/Si devices suffers from the lattice and CTE mismatches between GaN and Si and therefore multiple methods of strain reduction have been employed to counter these effects. In this work we presented two novel methods of substrate modification to promote the growth of device quality GaN on Si. Initial work focused on the implantation of AlN/Si(111) substrates with N+ ions below the AlN/Si(111) interface. A reduction in the initial compressive stress in GaN films as well as the degree of tensile stress generation during growth was observed on implanted samples. Optical microscopy of the GaN surfaces showed reduced channeling crack density on implanted substrates. Transmission electron microscopy (TEM) studies showed a disordered layer in the Si substrate at the implantation depth which consisted of a mixture of polycrystalline and amorphous Si. Evidence was provided to suggest that the disordered layer at the implantation depth was acting as a compliant layer which decoupled the GaN film from the bulk Si substrate and partially accommodated the tensile stress formed during growth and cooling. A reduction in threading dislocation (TD) density on ion implanted substrates was also observed. Additional studies showed that by increasing the lateral size of AlN islands, the tensile growth stress and TD density in GaN films on ion implanted substrates could be further reduced. XRD studies showed an expansion of the AlN lattice on implanted substrates with larger lateral island sizes. The final tensile growth stress of films on implanted substrates was further

  12. Chemical vapor deposition of Ni-C films from bis-(ethylcyclopentadienyl) nickel.

    PubMed

    Alexandrov, S E; Protopopova, V S

    2011-09-01

    Metal-organic chemical vapor deposition (MOCVD) is widely used for deposition of various nickel-containing coatings, such as catalytic nickel thin films and nanoparticles, nickel silicide alloys and magnetic carbon-nickel nanocomposite layers. Here we report preliminary results from an attempt to use bis-(ethylcyclopentadienyl) nickel [(EtCp)2Ni] as a precursor for MOCVD of Ni-C thin films in the (EtCp)2Ni-Ar and (EtCp)2Ni-H2-Ar reaction systems. Mechanism of precursor fragmentation was proposed on the basis of the results from a study of gaseous reaction products in the exhaust line of the reactor by means of mass-spectrometry. It was found that an introduction of hydrogen in the gas phase led to an increase in conversion rate of the precursor. Deposited films were analyzed by means of atomic force microscope (AFM), scanning electron microscopy (SEM), X-ray fluorescence spectroscopy (XFS). The effect of hydrogen on growth rate, composition, and morphology of the deposited Ni-C films were experimentally studied.

  13. Epitaxial YBa2Cu3O7-x nanocomposite thin films from colloidal solutions

    NASA Astrophysics Data System (ADS)

    Cayado, P.; De Keukeleere, K.; Garzón, A.; Perez-Mirabet, L.; Meledin, A.; De Roo, J.; Vallés, F.; Mundet, B.; Rijckaert, H.; Pollefeyt, G.; Coll, M.; Ricart, S.; Palau, A.; Gázquez, J.; Ros, J.; Van Tendeloo, G.; Van Driessche, I.; Puig, T.; Obradors, X.

    2015-12-01

    A methodology of general validity to prepare epitaxial nanocomposite films based on the use of colloidal solutions containing different crystalline preformed oxide nanoparticles (ex situ nanocomposites) is reported. The trifluoroacetate (TFA) metal-organic chemical solution deposition route is used with alcoholic solvents to grow epitaxial YBa2Cu3O7 (YBCO) films. For this reason stabilizing oxide nanoparticles in polar solvents is a challenging goal. We have used scalable nanoparticle synthetic methodologies such as thermal and microwave-assisted solvothermal techniques to prepare CeO2 and ZrO2 nanoparticles. We show that stable and homogeneous colloidal solutions with these nanoparticles can be reached using benzyl alcohol, triethyleneglycol, nonanoic acid, trifluoroacetic acid or decanoic acid as protecting ligands, thereby allowing subsequent mixing with alcoholic TFA solutions. An elaborate YBCO film growth analysis of these nanocomposites allows the identification of the different relevant growth phenomena, e.g. nanoparticles pushing towards the film surface, nanoparticle reactivity, coarsening and nanoparticle accumulation at the substrate interface. Upon mitigation of these effects, YBCO nanocomposite films with high self-field critical currents (J c ˜ 3-4 MA cm-2 at 77 K) were reached, indicating no current limitation effects associated with epitaxy perturbation, while smoothed magnetic field dependences of the critical currents at high magnetic fields and decreased effective anisotropic pinning behavior confirm the effectiveness of the novel developed approach to enhance vortex pinning. In conclusion, a novel low cost solution-derived route to high current nanocomposite superconducting films and coated conductors has been developed with very promising features.

  14. Textured ferroelectric thin films: Synthesis, characterization, and influence of compositional grading on the dielectric behavior

    NASA Astrophysics Data System (ADS)

    El-Naggar, Mohamed Y.

    This dissertation focuses on two topics concerning the connections between structure and property in ferroelectric thin films. First, the synthesis of highly oriented ferroelectric thin films is addressed, where the texture is needed to generate high strains that rely on electromechanical domain switching. The ferroelectric films are integrated with oxide electrodes onto single crystal MgO and Si substrates using biaxially-textured MgO as buffer layers. The second topic focuses on modeling the dielectric behavior of compositionally graded ferroelectrics. The functional ferroelectric PbxBa1- xTiO3 films are deposited by metalorganic chemical vapor deposition (MOCVD). SrRuO3, grown by pulsed laser deposition (PLD), is a lattice-matching electrode. Both the ferroelectric and oxide electrode layers are found to inherit the biaxial texture of the underlying MgO template, which can be deposited by ion beam assisted deposition (IBAD) directly on Si-based substrates. In addition, we demonstrated control of the ferroelectric film stoichiometry using a spectroscopic control loop that monitors the ultraviolet spectra of the gas-phase MOCVD precursors during growth. Detailed studies of the microstructural details of these films will be presented. The second topic of this thesis explores the dielectric behavior of functionally graded ferroelectric thin films. Homogenous ferroelectrics offer the possibility of engineering a tunable dielectric response for components in microwave circuits. However, this approach often leads to an undesired temperature sensitivity. Compositionally-graded BaxSr1- xTO3 ferroelectric films have been explored as a means of redressing this sensitivity, but experimental observations vary depending on geometry and other details. A continuum model is presented to calculate the capacitive response of graded ferroelectric films with realistic electrode geometries by accurately accounting for the polarization distribution and long-range electrostatic

  15. A K-band Frequency Agile Microstrip Bandpass Filter using a Thin Film HTS/Ferroelectric/dielectric Multilayer Configuration

    NASA Technical Reports Server (NTRS)

    Subramanyam, Guru; VanKeuls, Fred; Miranda, Felix A.

    1998-01-01

    We report on YBa2Cu3O(7-delta) (YBCO) thin film/SrTiO3 (STO) thin film K-band tunable bandpass filters on LaAlO3 (LAO) dielectric substrates. The 2 pole filter has a center frequency of 19 GHz and a 4% bandwidth. Tunability is achieved through the non-linear dc electric field dependence of the relative dielectric constant of STO(epsilon(sub rSTO). A large tunability ((Delta)f/f(sub 0) = (f(sub Vmax) - f(sub 0)/f(sub 0), where f(sub 0) is the center frequency of the filter at no bias and f(sub Vmax) is the center frequency of the filter at the maximum applied bias) of greater than 10% was obtained in YBCO/STO/LAO microstrip bandpass filters operating below 77 K. A center frequency shift of 2.3 GHz (i.e., a tunability factor of approximately 15%) was obtained at a 400 V bipolar dc bias, and 30 K, with minimal degradation in the insertion loss of the filter. This paper addresses design, fabrication and testing of tunable filters based on STO ferroelectric thin films. The performance of the YBCO/STO/LAO filters is compared to that of gold/STO/LAO counterparts.

  16. Thin-film multilayer interconnect technology for YBa2Cu3O7 - x

    NASA Astrophysics Data System (ADS)

    Wellstood, F. C.; Kingston, J. J.; Clarke, John

    1994-01-01

    The construction of microelectronic circuits from high-transition-temperature (Tc) superconductors requires techniques for producing thin-film wires, insulating crossovers, and vias (window contacts) between wires. Together, these three components form a superconducting interconnect technology. The challenges encountered in developing such a technology for high-Tc superconductors involve factors associated with the materials, the circuits and the fabrication techniques. The use of pulsed laser deposition in conjunction with shadow mask patterning, photolithographic pattern definition, acid etching, ion-beam etching, and surface cleaning to produce multilayer interconnects from YBa2Cu3O7-x (YBCO) is discussed. These processes have been used to construct a variety of passive high-temperature superconducting components and circuits, including crossovers, window contacts, multiturn coils, and flux transformers. Integrated magnetometers incorporating superconducting quantum interference devices, multichip modules with semiconductor die bonded to YBCO interconnect structures, and analog-to-digital converters have also been successfully demonstrated.

  17. Voltage-ampere characteristics of YBCO coated conductor under inhomogeneous oscillating magnetic field

    NASA Astrophysics Data System (ADS)

    Geng, J.; Shen, B.; Li, C.; Zhang, H.; Matsuda, K.; Li, J.; Zhang, X.; Coombs, T. A.

    2016-06-01

    Direct current carrying type II superconductors present a dynamic resistance when subjected to an oscillating magnetic field perpendicular to the current direction. If a superconductor is under a homogeneous field with high magnitude, the dynamic resistance value is nearly independent of transport current. Hoffmann and coworkers [Hoffmann et al., IEEE Trans. Appl. Supercond. 21, 1628 (2011)] discovered, however, flux pumping effect when a superconducting tape is under an inhomogeneous field orthogonal to the tape surface generated by rotating magnets. Following their work, we report the whole Voltage-Ampere (V-I) curves of an YBCO coated conductor under permanent magnets rotating with different frequencies and directions. We discovered that the two curves under opposite rotating directions differ from each other constantly when the transport current is less than the critical current, whereas the difference gradually reduces after the transport current exceeds the critical value. We also find that for different field frequencies, the difference between the two curves decreases faster with lower field frequency. The result indicates that the transport loss is dependent on the relative direction of the transport current and field travelling, which is distinct from traditional dynamic resistance model. The work may be instructive for the design of superconducting motors.

  18. Na-doping effect on the magnetic properties of the YBCO ceramics

    NASA Astrophysics Data System (ADS)

    Nurgaliev, T.; Miteva, S.; Nedkov, I.; Veneva, A.; Taslakov, M.

    1994-11-01

    The ac magnetization and the microwave surface resistance (at 12 GHz were measured on a series of Na-doped YBCO ceramic samples at 77 K. Their magnetic behavior was explained on the basis of the modified critical state model by taking into account the exsitence of a field-dependent component J(sub c1) (due to weakly linked grains) and a field-independent component J(sub c0) (due to perfectly linked grains) in the bulk critical current density of the samples. The Na and Cu remaining after the heat treatment of the samples changed the intergranular medium parameters and impeded the correlation between the grains. As a result, an increase of the Na concentration led to a decrease of the specimens critical current density and an increase of their surface resistance. At small Na concentrations, a certain increase of J(sub c1) was observed, which can be explained by taking into account the possibility of partial pinning of Josephson vortices in the 'weakly seeded' places in the intergranular media.

  19. Microstructure of Josephson junctions: Effect on supercurrent transport in YBCO grain boundary and barrier layer junctions

    SciTech Connect

    Merkle, K.L.; Huang, Y.

    1998-01-01

    The electric transport of high-temperature superconductors, such as YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (YBCO), can be strongly restricted by the presence of high-angle grain boundaries (GB). This weak-link behavior is governed by the macroscopic GB geometry and the microscopic grain boundary structure and composition at the atomic level. Whereas grain boundaries present a considerable impediment to high current applications of high T{sub c} materials, there is considerable commercial interest in exploiting the weak-link-nature of grain boundaries for the design of microelectronic devices, such as superconducting quantum interference devices (SQUIDs). The Josephson junctions which form the basis of this technology can also be formed by introducing artificial barriers into the superconductor. The authors have examined both types of Josephson junctions by EM techniques in an effort to understand the connection between microstructure/chemistry and electrical transport properties. This knowledge is a valuable resource for the design and production of improved devices.

  20. Ideal charge-density-wave order in the high-field state of superconducting YBCO.

    PubMed

    Jang, H; Lee, W-S; Nojiri, H; Matsuzawa, S; Yasumura, H; Nie, L; Maharaj, A V; Gerber, S; Liu, Y-J; Mehta, A; Bonn, D A; Liang, R; Hardy, W N; Burns, C A; Islam, Z; Song, S; Hastings, J; Devereaux, T P; Shen, Z-X; Kivelson, S A; Kao, C-C; Zhu, D; Lee, J-S

    2016-12-20

    The existence of charge-density-wave (CDW) correlations in cuprate superconductors has now been established. However, the nature of the CDW ground state has remained uncertain because disorder and the presence of superconductivity typically limit the CDW correlation lengths to only a dozen unit cells or less. Here we explore the field-induced 3D CDW correlations in extremely pure detwinned crystals of YBa2Cu3O2 (YBCO) ortho-II and ortho-VIII at magnetic fields in excess of the resistive upper critical field ([Formula: see text]) where superconductivity is heavily suppressed. We observe that the 3D CDW is unidirectional and possesses a long in-plane correlation length as well as significant correlations between neighboring CuO2 planes. It is significant that we observe only a single sharply defined transition at a critical field proportional to [Formula: see text], given that the field range used in this investigation overlaps with other high-field experiments including quantum oscillation measurements. The correlation volume is at least two to three orders of magnitude larger than that of the zero-field CDW. This is by far the largest CDW correlation volume observed in any cuprate crystal and so is presumably representative of the high-field ground state of an "ideal" disorder-free cuprate.

  1. Observations of YBCO superconductors under a low-temperature scanning electron microscope

    SciTech Connect

    Vyas, A.; Lam, C. C.; Li, S. H.; Lam, H. S.; Fung, P. C. W.

    1999-09-01

    Microscopic analyses have been performed on YBCO superconductors with Ca-doping and Gd-doping as a function of temperature by employing a low-temperature scanning electron microscope (LTSEM). On lowering temperature of the sample from 300 K to 90 K, the brightness of the SEM image changes due to the change in resistance of the sample. For the underdoped cuprates Y{sub 1-x}Ca{sub x}Ba{sub 2}Cu{sub 3}O{sub 7-{delta}}, with x=0.2, the pseudo gap in the normal state is opened at a temperature T* which far below the critical temperature T{sub c} of the superconductor. The opening of the pseudo gap has directly been observed under LTSEM (temperature fluctuating in the range of {+-}5 K). At temperature T* the formation of quasi-particles takes place, thus a sudden brightness change in the SEM image is observed. The results of these measurements are compared with the four-point probe measurements. It is proved that the data of these two measurements are quite in agreement with each other.

  2. Ideal charge-density-wave order in the high-field state of superconducting YBCO

    DOE PAGES

    Jang, H.; Lee, W. -S.; Nojiri, H.; ...

    2016-12-05

    Here, the existence of charge-density-wave (CDW) correlations in cuprate superconductors has now been established. However, the nature of the CDW ground state has remained uncertain because disorder and the presence of superconductivity typically limit the CDW correlation lengths to only a dozen unit cells or less. Here we explore the field-induced 3D CDW correlations in extremely pure detwinned crystals of YBa2Cu3O2 (YBCO) ortho-II and ortho-VIII at magnetic fields in excess of the resistive upper critical field (Hc2) where superconductivity is heavily suppressed. We observe that the 3D CDW is unidirectional and possesses a long in-plane correlation length as well asmore » significant correlations between neighboring CuO2 planes. It is significant that we observe only a single sharply defined transition at a critical field proportional to Hc2, given that the field range used in this investigation overlaps with other high-field experiments including quantum oscillation measurements. The correlation volume is at least two to three orders of magnitude larger than that of the zero-field CDW. This is by far the largest CDW correlation volume observed in any cuprate crystal and so is presumably representative of the high-field ground state of an “ideal” disorder-free cuprate.« less

  3. Ideal charge-density-wave order in the high-field state of superconducting YBCO

    SciTech Connect

    Jang, H.; Lee, W. -S.; Nojiri, H.; Matsuzawa, S.; Yasumura, H.; Nie, L.; Maharaj, A. V.; Gerber, S.; Liu, Y. -J.; Mehta, A.; Bonn, D. A.; Liang, R.; Hardy, W. N.; Burns, C. A.; Islam, Z.; Song, S.; Hastings, J.; Devereaux, T. P.; Shen, Z. -X.; Kivelson, S. A.; Kao, C. -C.; Zhu, D.; Lee, J. -S.

    2016-12-05

    Here, the existence of charge-density-wave (CDW) correlations in cuprate superconductors has now been established. However, the nature of the CDW ground state has remained uncertain because disorder and the presence of superconductivity typically limit the CDW correlation lengths to only a dozen unit cells or less. Here we explore the field-induced 3D CDW correlations in extremely pure detwinned crystals of YBa2Cu3O2 (YBCO) ortho-II and ortho-VIII at magnetic fields in excess of the resistive upper critical field (Hc2) where superconductivity is heavily suppressed. We observe that the 3D CDW is unidirectional and possesses a long in-plane correlation length as well as significant correlations between neighboring CuO2 planes. It is significant that we observe only a single sharply defined transition at a critical field proportional to Hc2, given that the field range used in this investigation overlaps with other high-field experiments including quantum oscillation measurements. The correlation volume is at least two to three orders of magnitude larger than that of the zero-field CDW. This is by far the largest CDW correlation volume observed in any cuprate crystal and so is presumably representative of the high-field ground state of an “ideal” disorder-free cuprate.

  4. Ideal charge-density-wave order in the high-field state of superconducting YBCO

    PubMed Central

    Jang, H.; Lee, W.-S.; Nojiri, H.; Matsuzawa, S.; Yasumura, H.; Nie, L.; Maharaj, A. V.; Gerber, S.; Liu, Y.-J.; Mehta, A.; Bonn, D. A.; Liang, R.; Hardy, W. N.; Burns, C. A.; Islam, Z.; Song, S.; Hastings, J.; Devereaux, T. P.; Shen, Z.-X.; Kivelson, S. A.; Kao, C.-C.; Zhu, D.; Lee, J.-S.

    2016-01-01

    The existence of charge-density-wave (CDW) correlations in cuprate superconductors has now been established. However, the nature of the CDW ground state has remained uncertain because disorder and the presence of superconductivity typically limit the CDW correlation lengths to only a dozen unit cells or less. Here we explore the field-induced 3D CDW correlations in extremely pure detwinned crystals of YBa2Cu3O2 (YBCO) ortho-II and ortho-VIII at magnetic fields in excess of the resistive upper critical field (Hc2) where superconductivity is heavily suppressed. We observe that the 3D CDW is unidirectional and possesses a long in-plane correlation length as well as significant correlations between neighboring CuO2 planes. It is significant that we observe only a single sharply defined transition at a critical field proportional to Hc2, given that the field range used in this investigation overlaps with other high-field experiments including quantum oscillation measurements. The correlation volume is at least two to three orders of magnitude larger than that of the zero-field CDW. This is by far the largest CDW correlation volume observed in any cuprate crystal and so is presumably representative of the high-field ground state of an “ideal” disorder-free cuprate. PMID:27930313

  5. The effect of disorder on the critical points in the vortex phase diagram of YBCO

    SciTech Connect

    Crabtree, G. W.; Kwok, W. K.; Paulius, L. M.; Petrean, A. M.; Olsson, R. J.; Karapetrov, G.; Tobos, V.; Moulton, W. G.

    2000-01-19

    The effect of line disorder induced by heavy ion irradiation and of point disorder induced by proton and electron irradiation on the upper and lower critical points in the vortex phase diagram of YBCO is presented. The authors find that dilute line disorder induces a Bose glass transition at low fields which is replaced at the lower critical point by first order melting at higher fields. Strong pinning point defects raise the lower critical point, while weak pinning point defects have little or no effect on the lower critical point. The upper critical point is lowered by point disorder, but raised by line disorder. First order melting is suppressed by point disorder in two ways, by lowering of the upper critical point only for weak point pins, or by merging of the upper and lower critical points for strong point pins. The differing responses of the upper and lower critical points to line and point disorder can be understood in a picture of transverse and longitudinal spatial fluctuations.

  6. Microstructural evolution in multiseeded YBCO bulk samples grown by the TSMG process

    NASA Astrophysics Data System (ADS)

    Goodfellow, A.; Shi, Y.-H.; Durrell, J. H.; Dennis, A. R.; Cardwell, D. A.; Grovenor, C. R. M.; Speller, S. C.

    2016-11-01

    Superconducting single-grain YBCO bulk samples with the ability to trap high magnetic fields can be grown using the top-seeded melt-growth process. Multiseeding techniques have the potential to enable larger diameter bulks to be grown, but the performance of these materials is not yet comparable to the single-seeded bulks. Here we carry out detailed three-dimensional microstructural characterisation on a multiseeded sample grown with the seeds aligned in the 0°-0° geometry using high resolution microanalysis techniques. Chemical and structural variations have been correlated with the trapped field distribution in three separate slices of the sample. The top slice of the sample shows four peaks in trapped field, indicating that the current flows in four separate loops rather than in one large loop within the sample. This has been explained by the build-up in insulating Y-211 particles where the growth fronts from the two seeds meet, forming a barrier to current flow, as well as the low Y-211 content (and hence low J c) of the large c-axis growth sector.

  7. Pseudogap signatures measured in the Fermi surface of underdoped YBCO by quantum oscillations

    NASA Astrophysics Data System (ADS)

    Sebastian, Suchitra E.

    2013-03-01

    Solving the riddle of the pseudogap state in underdoped high temperature superconductors is critical to the understanding of the origin of high temperature superconductivity. Quantum oscillations performed on single crystals of the family of underdoped YBCO cuprates reveal small Fermi surface pockets in the normal state accessed at low temperatures and high magnetic fields. It has been widely thought, however, that high magnetic fields cause this state to be significantly different from the mysterious pseudogap state measured at high temperatures and low magnetic fields. In this talk I will present a quantum oscillation study of underdoped YBa2Cu3O6+x up to magnetic fields of 100 T that reveals a dimensional collapse of the Fermi surface due to a drastic reduction in c-axis hopping, identical to the pseudogap signature measured in the low magnetic field regime. We therefore conclude that the fundamental properties of the pseudogap are encoded in the Fermi surface, an understanding of which is critical to uncovering the origin of the pseudogap in high temperature superconductors. Possible mechanisms are discussed to explain the origin of the Fermi surface in underdoped YBa2Cu3O6+x. This work was performed in collaboration with G. Lonzarich (University of Cambridge), N. Harrison, M. Altarawneh, F. Balakirev (Los Alamos National Laboratory), and R. Liang, W. Hardy, D. Bonn (University of British Columbia)

  8. Fabrication of Cu3Zn3Se ternary compounds by AP-MOCVD

    NASA Astrophysics Data System (ADS)

    Chen, Tsung-Ming; Lan, Shan-Ming; Uen, Wu-Yih; Yang, Tsun-Neng; Chang, Kuo-Jen; Shen, Chin-Chang; Hsu, Cheng-Fang; Jhao, Jian-Chang

    2013-10-01

    I-II-VI Ternary chalcopyrite semiconductors of Cu1-xZn1-ySe2-δ (Cu3Zn3Se) were successfully fabricated by the atmospheric pressure metal-organic chemical vapor deposition method for the first time. Four major peaks of (112), (220)/(204), (312)/(116), and (400), accompanied by three minor peaks of (103), (211) and (301) were observable in the X-ray diffraction spectra. In particular, the presence of those latter low-intensity peaks featured the formation of the chalcopyrite type Cu3Zn3Se compound. Typical absorption coefficients of the films produced were found to vary from 2.75×10 cm-1 to 5.75×10 cm-1 over all visible light range and from the same optical absorption spectra the energy gap of the material was extracted to be about 2.02 eV. Moreover, the photoluminescence measurement conducted at room temperature also exhibited a strong orange-colored emission line at 1.94 eV, which further confirmed that the Cu3Zn3Se ternary compound has been prepared. In addition, the cross-sectional and top-view scanning electron microscopy images characterized the fabricated Cu3Zn3Se compound as a polycrystalline film of thickness about 1-1.3 μm and consisting of 1-2.5 μm sized grains.

  9. Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.

    PubMed

    Park, Ji-Hyeon; Kim, Min-Hee; Kissinger, Suthan; Lee, Cheul-Ro

    2013-04-07

    We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300-400 nm with a density of 6-7 × 10(7) cm(-2). The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current-voltage (I-V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).

  10. Investigation on structural, optical and electrical properties of Cp2Mg flow varied p-GaN grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Surender, S.; Pradeep, S.; Ramesh, R.; Baskar, K.

    2016-05-01

    In this work the effect of different concentration of Magnesium doped GaN (p-GaN) were systematically studied. The p-GaN epilayers were grown on c-plane sapphire substrate by horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD) with various flow rates of 100 sccm to 300 sccm using bis-(cyclopentadienyl) - magnesium (Cp2Mg) precursor. The samples were subjected to structural, optical, morphological and electrical studies using High Resolution X-ray diffraction (HRXRD), room temperature photoluminescence (PL), Atomic Force Microscopy (AFM) and Hall measurement respectively. Results indicated that the Mg doped GaN of 200 sccm Cp2Mg has the root mean square (rms) roughness of about 0.3 nm for a scan area of 5×5 µm2 which has good two dimensional growth. Moreover, Hall measurements results shows that (200 sccm Cp2Mg) Mg-doped GaN possess the highest hole concentration of 5.4×1017cm-3 and resistivity of 1.7 Ωcm at room temperature.

  11. A-SITE-AND/OR B-SITE-MODIFIED PBZRTIO3 MATERIALS AND (PB, SR, CA, BA, MG) (ZR, TI,NB, TA)O3 FILMS HAVING UTILITY IN FERROELECTRIC RANDOM ACCESS MEMORIES AND HIGH PERFORMANCE THIN FILM MICROACTUATORS

    NASA Technical Reports Server (NTRS)

    Roeder, Jeffrey F. (Inventor); Chen, Ing-Shin (Inventor); Bilodeau, Steven (Inventor); Baum, Thomas H. (Inventor)

    2004-01-01

    A modified PbZrTiO.sub.3 perovskite crystal material thin film, wherein the PbZrTiO.sub.3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

  12. Spin polarized current in an InSb film

    NASA Astrophysics Data System (ADS)

    Frazier, Matthew; Heremans, J. J.; Khodaparast, Giti A.

    2008-03-01

    Recently, there has been much interest in developing and exploring spin based semiconductor devices and phenomena. One of the key challenges in developing spin based devices is to generate, control, and measure spin currents directly. In this talk, we report interband circular photogalvanic (CPG) effects using pulsed near-infrared radiations in an InSb film grown by the MOCVD technique. The film is n-type Te-doped with electron density of ˜ 6.0 x10^15 cm-3 and mobility of 58,500 cm^2/Vs at 100 K. We observe a CPG current whose direction and magnitude depend on the helicity of the incident light, the angle of the incidence, and temperature. Our observation is important to understand zero-field spin splitting mechanisms in a system with strong-spin orbit interaction.

  13. Electrical transport and Raman spectral studies of (110)-oriented PrBa2 (Cu0.8M0.2)3O7 (M = Ga, Al, Zn, Ni) thin films

    NASA Astrophysics Data System (ADS)

    Kandel, Hom; Chen, Tar-Pin; Iliev, Milko N.; Bourdo, Shawn; Seo, Hye-Won; Watanabe, Fumiya; Viswanathan, Tito

    2013-04-01

    The electrical transport and Raman spectral studies of (110)-oriented PrBa2 (Cu0.8M0.2)3O7 (M = Ga, Al, Ni, Zn) (PBCMO) thin films have been investigated. The electrical resistivity, ρ(T), of (110)-oriented PrBa2 (Cu0.8Ga0.2)3O7 (PBCGO) and PrBa2 (Cu0.8Al0.2)3O7 (PBCAO) thin films are many orders of magnitude higher than that of the (110)-oriented PrBa2Cu3O7 (PBCO) thin films and follow Mott's 3D variable range hopping law up to room temperature. The electrical resistivity and Raman spectroscopic studies show that Al and Ga ions replace the Cu ions in the Cu-O chains of (110)-oriented PBCO and cause an extensive localization of charge carriers (holes) in the chains site of the PBCO. Our transport studies on YBa2Cu3O7 (YBCO)/PBCGO and YBCO/PBCAO multilayers suggest that PBCAO and PBCGO thin films possess very less or no proximity effects. These results show (110)-oriented PBCGO and PBCAO thin films may serve as very effective insulators in YBCO based superconductor/insulator/superconductor tunneling Josephson junction.

  14. Flux pinning enhancements in YBa2Cu3O7-8 superconductors through phase separated, self-assembled LaMnO3-MgO nanocomposite films.

    SciTech Connect

    Polat, Ozgur; Aytug, Tolga; Paranthaman, Mariappan Parans; Leonard, Keith J; Pennycook, Stephen J; Kim, Kyunghoon; Cook, Sylvester W; Thompson, James R; Christen, David K; Goyal, Amit; Selvamanickam, V.; Lupini, Andrew R; Meyer, Hendrik; Qiu, Xiaofeng; Xiong, X.

    2011-01-01

    Technological applications of high temperature superconductors (HTS) require high critical current density, Jc, under operation at high magnetic field strengths. This requires effective flux pinning by introducing artificial defects through creative processing. In this work, we generated correlated disorder for strong vortex pinning in the YBa2Cu3O7- (YBCO) films by replacing the standard LaMnO3 (LMO) cap buffer layers in ion beam assisted deposited MgO templates with LMO:MgO composite films. Such films revealed formation of two phase-separated, but at the same time vertically aligned, self-assembled composite nanostructures that extend throughout the entire thickness of the film. Measurements of magnetic-field orientation-dependent Jc of YBCO coatings deposited on these nanostructured cap layers showed correlated c-axis pinning and improved in-field Jc performance compared to those of YBCO films deposited on standard LMO buffers. The present results demonstrate feasibility of novel and potentially practical approaches in the pursuit of more efficient, economical, and high performance superconducting devices.

  15. Detection and imaging of the oxygen deficiency in single crystalline YBa2Cu3O7-δ thin films using a scanning positron beam

    NASA Astrophysics Data System (ADS)

    Reiner, M.; Gigl, T.; Jany, R.; Hammerl, G.; Hugenschmidt, C.

    2015-03-01

    Single crystalline YBa2Cu3O7-δ (YBCO) thin films were grown by pulsed laser deposition in order to probe the oxygen deficiency δ using a mono-energetic positron beam. The sample set covered a large range of δ (0.191 < δ < 0.791) yielding a variation of the critical temperature Tc between 25 and 90 K. We found a linear correlation between the Doppler broadening of the positron electron annihilation line and δ determined by X-ray diffraction. Ab-initio calculations have been performed in order to exclude the presence of Y vacancies and to ensure the negligible influence of potentially present Ba or Cu vacancies to the found correlation. Moreover, scanning with the positron beam allowed us to analyze the spatial variation of δ, which was found to fluctuate with a standard deviation of up to 0.079(5) within a single YBCO film.

  16. Investigation of the temperature dependence of the critical state in melt processed YBa2Cu3O7-∂ thick films

    NASA Astrophysics Data System (ADS)

    Dewhurst, C. D.; Cardwell, D. A.; Alford, N. McN.

    1995-03-01

    The inter- and intra-grain critical current densities of melt processed YBa2Cu3O7-∂ (YBCO) thick films have been measured as a function of temperature using vibrating sample magnetometry. The width of the M-H hysteresis curve has been observed to scale with the cube of the sample width for temperatures up to ˜70 K and applied fields of greater than 1 T which implies that current flows on the length scale of the sample over this temperature and field regime. An exponential decrease of magnetic moment hysteresis with temperature up to ˜70 K and between ˜80 K and Tc has been observed and attributed to the dominance of inter- and intra-granular current, respectively. An empirical model is presented to account for the observed dependence of the critical current density on temperature, based upon weak link behavior within the ``Hub and Spoke'' like morphology characteristic of melt processed YBCO thick films.

  17. General approach for the determination of the magneto-angular dependence of the critical current of YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Zhang, X.; Zhong, Z.; Ruiz, H. S.; Geng, J.; Coombs, T. A.

    2017-02-01

    The physical understanding and numerical modelling of superconducting devices which exploit the high performance of second generation high temperature superconducting tapes (2G-HTS), is commonly hindered by the lack of accurate functions which allow the consideration of the in-field dependence of the critical current. This is true regardless of the manufacturer of the superconducting tape. In this paper, we present a general approach for determining a unified function I c(B, θ), ultimately capable of describing the magneto-angular dependence of the in-field critical current of commercial 2G-HTS tapes in the Lorentz configuration. Five widely different superconducting tapes, provided by three different manufacturers, have been tested in a liquid nitrogen bath and external magnetic fields of up to 400 mT. The critical current was recorded at 90 different orientations of the magnetic field ranging from θ = 0°, i.e., with B aligned with the crystallographic ab-planes of the YBCO layer, towards ±90°, i.e., with B perpendicular to the wider surfaces of the 2G-HTS tape. The whole set of experimental data has been analysed using a novel multi-objective model capable of predicting a sole function I c(B, θ). This allows an accurate validation of the experimental data regardless of the fabrication differences and widths of the superconducting tapes. It is shown that, in spite of the wide set of differences between the fabrication and composition of the considered tapes, at liquid nitrogen temperature the magneto-angular dependence of the in-field critical current of YBCO-based 2G-HTS tapes, can be described by a universal function I c(f(B), θ), with a power law field dependence dominated by the Kim’s factor B/B 0, and an angular dependence moderated by the electron mass anisotropy ratio of the YBCO layer.

  18. Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Nouhi, Akbar (Inventor); Stirn, Richard J. (Inventor)

    1988-01-01

    A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, in which a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd(sub 1-x)Mn(sub x)Te, in which 0 is less than or equal to x less than or equal to 0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) manganese (TCPMn) is employed. To prevent TCPMn condensation during its introduction into the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, in which the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.

  19. Co-evaporated YBCO/doped-CeO 2/Ni-W coated conductors oxygen improved using a supersonic nozzle

    NASA Astrophysics Data System (ADS)

    Gilioli, E.; Baldini, M.; Bindi, M.; Bissoli, F.; Pattini, F.; Rampino, S.; Ginocchio, S.; Gauzzi, A.; Rocca, M.; Zannella, S.

    2007-10-01

    A novel process for the coated conductors (CC) deposition, characterized by a single CeO2 buffer layer architecture, and a new oxygenation device for the YBCO layer has been developed. In CC technology, usually the ceria layer thickness must be less than 100 nm to avoid the formation of cracks; in order to ensure an efficient barrier effect, complex and costly multi-buffer layers architectures must be grown. In this work, we describe the way to increase the thickness of crack-free single buffer layer.

  20. Flux Pinning of Y-Ba-Cu-O Films Doped With BaZrO3 Nanoparticles by Multilayer and Single Target Methods (Postprint)

    DTIC Science & Technology

    2007-06-01

    AFRL-RZ-WP-TP-2012-0130 FLUX PINNING OF Y-Ba-Cu-O FILMS DOPED WITH BaZrO3 NANOPARTICLES BY MULTILAYER AND SINGLE TARGET METHODS (POSTPRINT...To) February 2012 Journal Article Postprint 04 April 2005 – 04 April 2007 4. TITLE AND SUBTITLE FLUX PINNING OF Y-Ba-Cu-O FILMS DOPED WITH BaZrO3...effort was completed in 2007. 14. ABSTRACT The superconducting properties of YBa2Cu3O7-x (YBCO or 123) thin films doped with BaZrO3 (BZO