Multiple-layered effective medium approximation approach to modeling environmental effects on alumina passivated highly porous silicon nanostructured thin films measured by in-situ Mueller matrix ellipsometry

NASA Astrophysics Data System (ADS)

Mock, Alyssa; Carlson, Timothy; VanDerslice, Jeremy; Mohrmann, Joel; Woollam, John A.; Schubert, Eva; Schubert, Mathias

2017-11-01

Optical changes in alumina passivated highly porous silicon slanted columnar thin films during controlled exposure to toluene vapor are reported. Electron-beam evaporation glancing angle deposition and subsequent atomic layer deposition are utilized to deposit alumina passivated nanostructured porous silicon thin films. In-situ Mueller matrix generalized spectroscopic ellipsometry in an environmental cell is then used to determine changes in optical properties of the nanostructured thin films by inspection of individual Mueller matrix elements, each of which exhibit sensitivity to adsorption. The use of a multiple-layered effective medium approximation model allows for accurate description of the inhomogeneous nature of toluene adsorption onto alumina passivated highly porous silicon slanted columnar thin films.

Issues and Effects of Atomic Oxygen Interactions With Silicone Contamination on Spacecraft in Low Earth Orbit

NASA Technical Reports Server (NTRS)

Banks, Bruce; Rutledge, Sharon; Sechkar, Edward; Stueber, Thomas; Snyder, Aaron; deGroh, Kim; Haytas, Christy; Brinker, David

2000-01-01

The continued presence and use of silicones on spacecraft in low Earth orbit (LEO) has been found to cause the deposition of contaminant films on surfaces which are also exposed to atomic oxygen. The composition and optical properties of the resulting SiO(x)- based (where x is near 2) contaminant films may be dependent upon the relative rates of arrival of atomic oxygen, silicone contaminant and hydrocarbons. This paper presents results of in-space silicone contamination tests, ground laboratory simulation tests and analytical modeling to identify controlling processes that affect contaminant characteristics.

Accurate control of oxygen level in cells during culture on silicone rubber membranes with application to stem cell differentiation.

PubMed

Powers, Daryl E; Millman, Jeffrey R; Bonner-Weir, Susan; Rappel, Michael J; Colton, Clark K

2010-01-01

Oxygen level in mammalian cell culture is often controlled by placing culture vessels in humidified incubators with a defined gas phase partial pressure of oxygen (pO(2gas)). Because the cells are consuming oxygen supplied by diffusion, a difference between pO(2gas) and that experienced by the cells (pO(2cell)) arises, which is maximal when cells are cultured in vessels with little or no oxygen permeability. Here, we demonstrate theoretically that highly oxygen-permeable silicone rubber membranes can be used to control pO(2cell) during culture of cells in monolayers and aggregates much more accurately and can achieve more rapid transient response following a disturbance than on polystyrene and fluorinated ethylene-propylene copolymer membranes. Cell attachment on silicone rubber was achieved by physical adsorption of fibronectin or Matrigel. We use these membranes for the differentiation of mouse embryonic stem cells to cardiomyocytes and compare the results with culture on polystyrene or on silicone rubber on top of polystyrene. The fraction of cells that are cardiomyocyte-like increases with decreasing pO(2) only when using oxygen-permeable silicone membrane-based dishs, which contract on silicone rubber but not polystyrene. The high permeability of silicone rubber results in pO(2cell) being equal to pO(2gas) at the tissue-membrane interface. This, together with geometric information from histological sections, facilitates development of a model from which the pO(2) distribution within the resulting aggregates is computed. Silicone rubber membranes have significant advantages over polystyrene in controlling pO(2cell), and these results suggest they are a valuable tool for investigating pO(2) effects in many applications, such as stem cell differentiation. Copyright 2009 American Institute of Chemical Engineers

Control of single-electron charging of metallic nanoparticles onto amorphous silicon surface.

PubMed

Weis, Martin; Gmucová, Katarína; Nádazdy, Vojtech; Capek, Ignác; Satka, Alexander; Kopáni, Martin; Cirák, Július; Majková, Eva

2008-11-01

Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film is reported. Single-electron charging (so-called quantized double-layer charging) of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the electric field in the surface region induced by the excess of negative/positive charged defect states in the amorphous silicon layer. The particular charge states in amorphous silicon are created by the simultaneous application of a suitable bias voltage and illumination before the measurement. The influence of charged states on the electric field in the surface region is evaluated by the finite element method. The single-electron charging is analyzed by the standard quantized double layer model as well as two weak-link junctions model. Both approaches are in accordance with experiment and confirm single-electron charging by tunnelling process at room temperature. This experiment illustrates the possibility of the creation of a voltage-controlled capacitor for nanotechnology.

Research of the Dispersity of the Functional Sericite/Methylphenyl- Silicone Resin

PubMed Central

Jiang, B.; Zhu, C. C.; Huang, Y. D.

2015-01-01

In order to improve the homogeneity and dispersity of the sericite in methylphenyl-silicone resin, the agglomerate state of the sericites was controlled effectively. The dispersive model of the sericite in methylphenyl-silicone resin was designed also. First, the modified sericite was prepared using hexadecyl trimethyl ammonium bromide as the intercalating agent. Then, functional sericite was incorporated into methylphenyl-silicone by terminal hydroxyl. The structure and dispersive performance of the hybrid polymers was charactered by analytical instruments. Scanning electron microscopy and Transmission electron microscope, Laser scanning confocal microscope and X-ray diffraction analysis showed that functional sericite was dispersed homogeneously in methylphenyl-silicone resin matrix. X-ray photoelectron spectroscopy analysis showed that the absorption peaks of the Si-OH band of methylphenyl-silicone resin were decreased and the Si-O-Si band was increased. This change evidently showed a significant role to enhance the reaction degree of the functional sericite in methylphenyl-silicone resin. PMID:26061002

Neuromorphic photonic networks using silicon photonic weight banks.

PubMed

Tait, Alexander N; de Lima, Thomas Ferreira; Zhou, Ellen; Wu, Allie X; Nahmias, Mitchell A; Shastri, Bhavin J; Prucnal, Paul R

2017-08-07

Photonic systems for high-performance information processing have attracted renewed interest. Neuromorphic silicon photonics has the potential to integrate processing functions that vastly exceed the capabilities of electronics. We report first observations of a recurrent silicon photonic neural network, in which connections are configured by microring weight banks. A mathematical isomorphism between the silicon photonic circuit and a continuous neural network model is demonstrated through dynamical bifurcation analysis. Exploiting this isomorphism, a simulated 24-node silicon photonic neural network is programmed using "neural compiler" to solve a differential system emulation task. A 294-fold acceleration against a conventional benchmark is predicted. We also propose and derive power consumption analysis for modulator-class neurons that, as opposed to laser-class neurons, are compatible with silicon photonic platforms. At increased scale, Neuromorphic silicon photonics could access new regimes of ultrafast information processing for radio, control, and scientific computing.

Topical Application of a Silicone Gel Sheet with Verapamil Microparticles in a Rabbit Model of Hypertrophic Scar.

PubMed

Rha, Eun Young; Kim, Yun Ho; Kim, Tae-Jung; Yoo, Gyeol; Rhie, Jong Won; Kim, Hyun-Jung; Park, Il-Kyu

2016-01-01

The authors developed a novel treatment based on the topical application of a silicone gel sheet containing verapamil microparticles. The ability of these silicone gel sheets to inhibit hypertrophic scar in a rabbit ear wound model was examined. Ten New Zealand White rabbits with a total of 80 wounds in both ears were used in this study. The rabbits were divided into five groups (control; silicone gel sheet; and silicone gel sheet plus 0.25, 2.5, and 25 mg of verapamil per gram). Histopathologic findings were quantified. The mean scar elevation index, fibroblast counts, and capillary counts differed significantly among the five groups (p < 0.05). The median scar elevation index was significantly lower in the silicone gel sheet plus 2.5 mg of verapamil per gram group than in the silicone gel sheet group (1.2 versus 2.2). The median number of fibroblasts was significantly lower in the silicone gel sheet plus 0.25 mg of verapamil per gram group than in the silicone gel sheet group (172.5 versus 243). In the median number of capillary lumina, there was no significant difference between the silicone gel sheet group and the silicone gel sheet plus 0.25, 2.5, and 25 mg of verapamil per gram groups (28.5, 18, 20, and 18, respectively). Topical application of a silicone gel sheet with verapamil microparticles may be a novel, effective treatment method for hypertrophic scar, but its safety and efficacy in humans must be tested in clinical trials.

Periodically poled silicon

NASA Astrophysics Data System (ADS)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

A study of the kinetics of isothermal nicotine desorption from silicon dioxide

NASA Astrophysics Data System (ADS)

Adnadjevic, Borivoj; Lazarevic, Natasa; Jovanovic, Jelena

2010-12-01

The isothermal kinetics of nicotine desorption from silicon dioxide (SiO 2) was investigated. The isothermal thermogravimetric curves of nicotine at temperatures of 115 °C, 130 °C and 152 °C were recorded. The kinetic parameters ( Ea, ln A) of desorption of nicotine were calculated using various methods (stationary point, model constants and differential isoconversion method). By applying the "model-fitting" method, it was found that the kinetic model of nicotine desorption from silicon dioxide was a phase boundary controlled reaction (contracting volume). The values of the kinetic parameters, Ea,α and ln Aα, complexly change with changing degree of desorption and a compensation effect exists. A new mechanism of activation for the desorption of the absorbed molecules of nicotine was suggested in agreement with model of selective energy transfer.

Probing low noise at the MOS interface with a spin-orbit qubit.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jock, Ryan Michael; Jacobson, Noah Tobias; Harvey-Collard, Patrick

The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce amore » spin-orbit (SO) driven singlet- triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 μs using 99.95% 28Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise. isotopically enhanced silicon ST qubit systems« less

Mechanistic analysis of time-dependent failure of oxynitride glass-joined silicon nitride below 1000 degree C

DOE Office of Scientific and Technical Information (OSTI.GOV)

O'Brien, M.H.; Coon, D.M.

Time-dependent failure at elevated temperatures currently governs the service life of oxynitride glass-joined silicon nitride. Creep, devitrification, stress- aided oxidation-controlled slow crack growth, and viscous cabitation-controlled failure are examined as possible controlling mechanisms. Creep deformation failure is observed above 1000{degrees}C. Fractographic evidence indicates cavity formation and growth below 1000{degrees}C. Auger electron spectroscopy verified that the oxidation rate of the joining glass is governed by the oxygen supply rate. Time-to-failure data and those predicted using the Tsai and Raj, and Raj and Dang viscous cavitation models. It is concluded that viscous relaxation and isolated cavity growth control the rate of failuremore » in oxynitride glass-filled silicon nitride joints below 1000{degrees}C. Several possible methods are also proposed for increasing the service lives of these joints.« less

Methods of Si based ceramic components volatilization control in a gas turbine engine

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garcia-Crespo, Andres Jose; Delvaux, John; Dion Ouellet, Noemie

A method of controlling volatilization of silicon based components in a gas turbine engine includes measuring, estimating and/or predicting a variable related to operation of the gas turbine engine; correlating the variable to determine an amount of silicon to control volatilization of the silicon based components in the gas turbine engine; and injecting silicon into the gas turbine engine to control volatilization of the silicon based components. A gas turbine with a compressor, combustion system, turbine section and silicon injection system may be controlled by a controller that implements the control method.

The Efficacy of a Silicone Sheet in Postoperative Scar Management.

PubMed

Kim, Jin Sam; Hong, Joon Pio; Choi, Jong Woo; Seo, Dong Kyo; Lee, Eun Sook; Lee, Ho Seong

2016-09-01

Silicone gel sheeting has been introduced to prevent scarring, but objective evidence for its usefulness in scar healing is limited. Therefore, the authors' objective was to examine the effectiveness of silicone gel sheeting by randomly applying it to only unilateral scars from a bilateral hallux valgus surgery with symmetrical closure. In a prospective randomized, blinded, intraindividual comparison study, the silicone gel sheeting was applied to 1 foot of a hallux valgus incision scar (an experiment group) for 12 weeks upon removal of the stitches, whereas the symmetrical scar from the other foot was left untreated (a control group). The scars were evaluated at 4 and 12 weeks after the silicon sheet application. The Vancouver Scar Scale was used to measure the vascularity, pigmentation, pliability, height, and length of the scars. Adverse effects were also evaluated, and they included pain, itchiness, rash, erythema, and skin softening. At weeks 4 and 12, the experiment group scored significantly better on the Vancouver Scar Scale in all items, except length (P < .05 for all except the length of scar), compared with the control group. In all items, adverse effects of the experiment group were significantly lower than those of the control group at week 12, suggesting that direct attachment of the silicone sheet does not cause adverse effects (P < .05). To the authors' knowledge, this is one of the first models to minimize bias related to scar evaluation by using symmetrical scars. The early silicone sheet application did show a significant improvement in prevention of postoperative scarring.

Compact Radiative Control Structures for Millimeter Astronomy

NASA Technical Reports Server (NTRS)

Brown, Ari D.; Chuss, David T.; Chervenak, James A.; Henry, Ross M.; Moseley, s. Harvey; Wollack, Edward J.

2010-01-01

We have designed, fabricated, and tested compact radiative control structures, including antireflection coatings and resonant absorbers, for millimeter through submillimeter wave astronomy. The antireflection coatings consist of micromachined single crystal silicon dielectric sub-wavelength honeycombs. The effective dielectric constant of the structures is set by the honeycomb cell geometry. The resonant absorbers consist of pieces of solid single crystal silicon substrate and thin phosphorus implanted regions whose sheet resistance is tailored to maximize absorption by the structure. We present an implantation model that can be used to predict the ion energy and dose required for obtaining a target implant layer sheet resistance. A neutral density filter, a hybrid of a silicon dielectric honeycomb with an implanted region, has also been fabricated with this basic approach. These radiative control structures are scalable and compatible for use large focal plane detector arrays.

Effect of Silicon on Desulfurization of Aluminum-killed Steels

NASA Astrophysics Data System (ADS)

Roy, Debdutta

Recent reports have suggested that silicon has a beneficial effect on the rate of desulfurization of Al-killed steel. This effect is difficult to understand looking at the overall desulfurization reaction which does not include silicon. However an explanation is proposed by taking into account the (SiO2)/[Si] equilibrium in which some Al reaching the slag-metal interface is used in reducing the SiO2 in the slag. This reaction can be suppressed to some extent if the silicon content of the metal is increased and in doing so, more Al will be available at the slag-metal interface for the desulfurization reaction and this would increase the rate of the desulfurization reaction. A model was developed, assuming the rates are controlled by mass transfer, taking into account the coupled reactions of the reduction of silica, and other unstable oxides, namely iron oxide and manganese oxide, in the slag and desulfurization reaction in the steel by aluminum. The model predicts that increasing silicon increases the rate and extent of desulfurization. Plant data was analyzed to obtain rough estimates of ladle desulfurization rates and also used to validate the model predictions. Experiments have been conducted on a kilogram scale of material in an induction furnace to test the hypothesis. The major conclusions of the study are as follows: The rate and extent of desulfurization improve with increasing initial silicon content in the steel; the effect diminishes at silicon contents higher than approximately 0.2% and with increasing slag basicity. This was confirmed with kilogram-scale laboratory experiments. The effects of the silicon content in the steel (and of initial FeO and MnO in the slag) largely arise from the dominant effects of these reactions on the equilibrium aluminum content of the steel: as far as aluminum consumption or pick-up is concerned, the Si/SiO2 reaction dominates, and desulfurization has only a minor effect on aluminum consumption. The rate is primarily controlled by mass transfer in the metal and slag phase mass transfer has a minor effect on the overall desulfurization kinetics. The model results are in agreement with the experimental data for the change in sulfur, silicon and aluminum contents with time which renders credibility to the underlying hypothesis of the kinetic model. Although the change of sulfur content with time is not very sensitive to the activity data source, the change of aluminum and silicon contents with time depend on the activity data source. The experimental results demonstrate that if the silicon content in the steel is high enough, the silicon can reduce the alumina from the slag and thus the steel melt will pick up aluminum. This can cause significant savings in aluminum consumption. For most of the slag compositions used in the experiments, the overall mass transfer is only limited by the steel phase and the slag phase mass transfer can be neglected for most practical cases. Mass balance calculations in the experiments support the basis of the model and also show that with respect to aluminum consumption, silica reduction is the main aluminum consuming (or production) reaction and the desulfurization reaction is only a secondary consumer of aluminum. Results from the plant trials conducted to test the effect of silicon on ladle desulfurization show that the rate and extent of desulfurization increase with the increase of the initial Si content, so in the ladle refining process, adding all the silicon in the beginning with the aluminum and the fluxes will be beneficial and could save considerable processing time at the ladle. The aluminum consumption for the heats with silicon added in the beginning (both in terms of the Al added to the steel and as slag deoxidants) is considerably lower compared to the cases where the silicon is added at the end. However, on a relative cost term, aluminum and silicon are similarly priced so substitution would not offer a major cost advantage.

Enhanced light absorption of silicon solar cells with dielectric nanostructured back reflector

NASA Astrophysics Data System (ADS)

Ren, Rui; Zhong, Zheng

2018-06-01

This paper investigates the light absorption property of nanostructured dielectric reflectors in silicon thin film solar cells using numerical simulation. Flat thin film solar cell with ZnO nanostructured back reflector can produce comparable photocurrent to the control model with Ag nanostructured back reflector. Furthermore, when it is integrated with nano-pillar surface decoration, a photocurrent density of 29.5 mA/cm2 can be achieved, demonstrating a photocurrent enhancement of 5% as compared to the model with Ag nanostructured back reflector.

Effect of Silicon in U-10Mo Alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kautz, Elizabeth J.; Devaraj, Arun; Kovarik, Libor

2017-08-31

This document details a method for evaluating the effect of silicon impurity content on U-10Mo alloys. Silicon concentration in U-10Mo alloys has been shown to impact the following: volume fraction of precipitate phases, effective density of the final alloy, and 235-U enrichment in the gamma-UMo matrix. This report presents a model for calculating these quantities as a function of Silicon concentration, which along with fuel foil characterization data, will serve as a reference for quality control of the U-10Mo final alloy Si content. Additionally, detailed characterization using scanning electron microscope imaging, transmission electron microscope diffraction, and atom probe tomography showedmore » that Silicon impurities present in U-10Mo alloys form a Si-rich precipitate phase.« less

Analytical study of optical bistability in silicon-waveguide resonators.

PubMed

Rukhlenko, Ivan D; Premaratne, Malin; Agrawal, Govind P

2009-11-23

We present a theoretical model that describes accurately the nonlinear phenomenon of optical bistability in silicon-waveguide resonators but remains amenable to analytical results. Using this model, we derive a transcendental equation governing the intensity of a continuous wave transmitted through a Fabry-Perot resonator formed using a silicon-on-insulator waveguide. This equation reveals a dual role of free carriers in the formation of optical bistability in silicon. First, it shows that free-carrier absorption results in a saturation of the transmitted intensity. Second, the free-carrier dispersion and the thermo-optic effect may introduce phase shifts far exceeding those resulting from the Kerr effect alone, thus enabling one to achieve optical bistability in ultrashort resonators that are only a few micrometers long. Bistability can occur even when waveguide facets are not coated because natural reflectivity of the silicon- r interface can provide sufficient feedback. We find that it is possible to control the input-output characteristics of silicon-based resonators by changing the free-carrier lifetime using a reverse-biased p-n junction. We show theoretically that such a technique is suitable for realization of electronically assisted optical switching at a fixed input power and it may lead to silicon-based, nanometer-size, optical memories.

Nanostructured medical device coatings based on self-assembled poly(lactic-co-glycolic acid) nanoparticles.

PubMed

Dayyoub, Eyas; Hobler, Christian; Nonnweiler, Pierina; Keusgen, Michael; Bakowsky, Udo

2013-07-01

Here we present a new method for providing nanostructured drug-loaded polymer films which enable control of film surface morphology and delivery of therapeutic agents. Silicon wafers were employed as models for implanted biomaterials and poly(lactic-co-glycolic acid) (PLGA) nanoparticles were assembled onto the silicon surface by electrostatic interaction. Monolayers of the PLGA particles were deposited onto the silicon surface upon incubation in an aqueous particle suspension. Particle density and surface coverage of the silicon wafers were varied by altering particle concentration, incubation time in nanoparticle suspension and ionic strength of the suspension. Dye loaded nanoparticles were prepared and assembled to silicon surface to form nanoparticle films. Fluorescence intensity measurements showed diffusion-controlled release of the dye over two weeks and atomic force microscopy (AFM) analysis revealed that these particles remained attached to the surface during the incubation time. This work suggests that coating implants with PLGA nanoparticles is a versatile technique which allows drug release from the implant surface and modulation of surface morphology. Copyright © 2013 Elsevier B.V. All rights reserved.

Kinetics of thermal donor generation in silicon

NASA Technical Reports Server (NTRS)

Mao, B.-Y.; Lagowski, J.; Gatos, H. C.

1984-01-01

The generation kinetics of thermal donors at 450 C in Czochralski-grown silicon was found to be altered by high-temperature preannealing (e.g., 1100 C for 30 min). Thus, when compared with as-grown Si, high-temperature preannealed material exhibits a smaller concentration of generated thermal donors and a faster thermal donor saturation. A unified mechanism of nucleation and oxygen diffusion-controlled growth (based on solid-state plate transformation theory) is proposed to account for generation kinetics of thermal donors at 450 C, in as-grown and high-temperature preannealed Czochralski silicon crystals. This mechanism is consistent with the main features of the models which have been proposed to explain the formation of oxygen thermal donors in silicon.

Evaluation of Primary Dendrite Arm Spacings from Aluminum-7wt% Silicon alloys Directionally Solidified aboard the International Space Station - Comparison with Theory

NASA Technical Reports Server (NTRS)

Angart, Samuel; Lauer, Mark; Poirier, David; Tewari, Surendra; Rajamure, Ravi; Grugel, Richard

2015-01-01

Aluminum – 7wt% silicon alloys were directionally solidified in the microgravity environment aboard the International Space Station as part of the “MIcrostructure Formation in CASTing of Technical Alloys under Diffusive and Magnetically Controlled Convective Conditions” (MICAST) European led program. Cross-sections of the sample during periods of steady-state growth were metallographically prepared from which the primary dendrite arm spacing (lambda 1) was measured. These spacings were found to be in reasonable agreement with the Hunt-Lu model which assumes a diffusion-controlled, convectionless, environment during controlled solidification. Deviation from the model was found and is attributed to gravity-independent thermocapillary convection where, over short distances, the liquid appears to have separated from the crucible wall.

Improved hemocompatibility of silicone rubber extracorporeal tubing via solvent swelling-impregnation of S-nitroso-N-acetylpenicillamine (SNAP) and evaluation in rabbit thrombogenicity model.

PubMed

Brisbois, Elizabeth J; Major, Terry C; Goudie, Marcus J; Bartlett, Robert H; Meyerhoff, Mark E; Handa, Hitesh

2016-06-01

Blood-contacting devices, including extracorporeal circulation (ECC) circuits, can suffer from complications due to platelet activation and thrombus formation. Development of nitric oxide (NO) releasing polymers is one method to improve hemocompatibility, taking advantage of the ability of low levels of NO to prevent platelet activation/adhesion. In this study a novel solvent swelling method is used to load the walls of silicone rubber tubing with the NO donor S-nitroso-N-acetylpenicillamine (SNAP). This SNAP-silicone rubber tubing exhibits an NO flux of ca. 1×10(-10)molcm(-2)min(-1), which mimics the range of NO release from the normal endothelium, which is stable for at least 4h. Images of the tubing before and after swelling, obtained via scanning electron microscopy, demonstrate that this swelling method has little effect on the surface properties of the tubing. The SNAP-loaded silicone rubber and silicone rubber control tubing are used to fabricate ECC circuits that are evaluated in a rabbit model of thrombogenicity. After 4h of blood flow, the SNAP-loaded silicone rubber circuits were able to preserve the blood platelet count at 64% of baseline (vs. 12% for silicone rubber control). A 67% reduction in the degree of thrombus formation within the thrombogenicity chamber was also observed. This study demonstrates the ability to improve the hemocompatibility of existing/commercial silicone rubber tubing via a simple solvent swelling-impregnation technique, which may also be applicable to other silicone-based blood-contacting devices. Localized nitric oxide (NO) release can be achieved from biomedical grade polymers doped with S-nitroso-N-acetylpenicillamine (SNAP). Despite the promising in vitro and in vivo biocompatibility results reported for these NO releasing polymers, many of these materials may face challenges in being translated to clinical applications, especially in the areas of polymer processing and manufacturing. In this study, we report a solvent swelling-impregnation technique to incorporate SNAP into extracorporeal circuit (ECC) tubing. These NO-releasing ECCs were able to attenuate the activation of platelets and maintain their functionality, while significantly reducing the extent of thrombus formation during 4h blood flow in the rabbit model of thrombogenicity. Copyright © 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Silicon Sheet Quality is Improved By Meniscus Control

NASA Technical Reports Server (NTRS)

Yates, D. A.; Hatch, A. E.; Goldsmith, J. M.

1983-01-01

Better quality silicon crystals for solar cells are possible with instrument that monitors position of meniscus as sheet of solid silicon is drawn from melt. Using information on meniscus height, instrument generates feedback signal to control melt temperature. Automatic control ensures more uniform silicon sheets.

Silicon Controlled Switch for Detection of Ionizing Radiation

DTIC Science & Technology

2015-12-01

sensitivity of previous NPS silicon controlled rectifier (SCR) based circuits. Additionally, the circuit in this thesis was able to detect AM-241 and...sensitivity of previous NPS silicon controlled rectifier (SCR) based circuits. Additionally, the circuit in this thesis was able to detect AM-241 and...Controlled Rectifier SCS Silicon-Controlled Switch SONAR SOund Navigation and Ranging VBIAS Applied Bias Voltage VH Holding Voltage VS Standalone SCS

Reduced Moment-Based Models for Oxygen Precipitates and Dislocation Loops in Silicon

NASA Astrophysics Data System (ADS)

Trzynadlowski, Bart

The demand for ever smaller, higher-performance integrated circuits and more efficient, cost-effective solar cells continues to push the frontiers of process technology. Fabrication of silicon devices requires extremely precise control of impurities and crystallographic defects. Failure to do so not only reduces performance, efficiency, and yield, it threatens the very survival of commercial enterprises in today's fiercely competitive and price-sensitive global market. The presence of oxygen in silicon is an unavoidable consequence of the Czochralski process, which remains the most popular method for large-scale production of single-crystal silicon. Oxygen precipitates that form during thermal processing cause distortion of the surrounding silicon lattice and can lead to the formation of dislocation loops. Localized deformation caused by both of these defects introduces potential wells that trap diffusing impurities such as metal atoms, which is highly desirable if done far away from sensitive device regions. Unfortunately, dislocations also reduce the mechanical strength of silicon, which can cause wafer warpage and breakage. Engineers must negotiate this and other complex tradeoffs when designing fabrication processes. Accomplishing this in a complex, modern process involving a large number of thermal steps is impossible without the aid of computational models. In this dissertation, new models for oxygen precipitation and dislocation loop evolution are described. An oxygen model using kinetic rate equations to evolve the complete precipitate size distribution was developed first. This was then used to create a reduced model tracking only the moments of the size distribution. The moment-based model was found to run significantly faster than its full counterpart while accurately capturing the evolution of oxygen precipitates. The reduced model was fitted to experimental data and a sensitivity analysis was performed to assess the robustness of the results. Source code for both models is included. A moment-based model for dislocation loop formation from {311} defects in ion-implanted silicon was also developed and validated against experimental data. Ab initio density functional theory calculations of stacking faults and edge dislocations were performed to extract energies and elastic properties. This allowed the effect of applied stress on the evolution of {311} defects and dislocation loops to be investigated.

A Physically Transient Form of Silicon Electronics, With Integrated Sensors, Actuators and Power Supply

PubMed Central

Hwang, Suk-Won; Tao, Hu; Kim, Dae-Hyeong; Cheng, Huanyu; Song, Jun-Kyul; Rill, Elliott; Brenckle, Mark A.; Panilaitis, Bruce; Won, Sang Min; Kim, Yun-Soung; Yu, Ki Jun; Ameen, Abid; Li, Rui; Su, Yewang; Yang, Miaomiao; Kaplan, David L.; Zakin, Mitchell R.; Slepian, Marvin J.; Huang, Yonggang; Omenetto, Fiorenzo G.; Rogers, John A.

2013-01-01

A remarkable feature of modern silicon electronics is its ability to remain functionally and physically invariant, almost indefinitely for many practical purposes. Here, we introduce a silicon-based technology that offers the opposite behavior: it gradually vanishes over time, in a well-controlled, programmed manner. Devices that are ‘transient’ in this sense create application possibilities that cannot be addressed with conventional electronics, such as active implants that exist for medically useful timeframes, but then completely dissolve and disappear via resorption by the body. We report a comprehensive set of materials, manufacturing schemes, device components and theoretical design tools for a complementary metal oxide semiconductor (CMOS) electronics of this type, together with four different classes of sensors and actuators in addressable arrays, two options for power supply and a wireless control strategy. A transient silicon device capable of delivering thermal therapy in an implantable mode and its demonstration in animal models illustrate a system-level example of this technology. PMID:23019646

The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire

NASA Technical Reports Server (NTRS)

Pisciotta, B. P.; Gross, C.

1976-01-01

Partial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.

Bifurcation of synchronous oscillations into torus in a system of two reciprocally inhibitory silicon neurons: experimental observation and modeling.

PubMed

Bondarenko, Vladimir E; Cymbalyuk, Gennady S; Patel, Girish; Deweerth, Stephen P; Calabrese, Ronald L

2004-12-01

Oscillatory activity in the central nervous system is associated with various functions, like motor control, memory formation, binding, and attention. Quasiperiodic oscillations are rarely discussed in the neurophysiological literature yet they may play a role in the nervous system both during normal function and disease. Here we use a physical system and a model to explore scenarios for how quasiperiodic oscillations might arise in neuronal networks. An oscillatory system of two mutually inhibitory neuronal units is a ubiquitous network module found in nervous systems and is called a half-center oscillator. Previously we created a half-center oscillator of two identical oscillatory silicon (analog Very Large Scale Integration) neurons and developed a mathematical model describing its dynamics. In the mathematical model, we have shown that an in-phase limit cycle becomes unstable through a subcritical torus bifurcation. However, the existence of this torus bifurcation in experimental silicon two-neuron system was not rigorously demonstrated or investigated. Here we demonstrate the torus predicted by the model for the silicon implementation of a half-center oscillator using complex time series analysis, including bifurcation diagrams, mapping techniques, correlation functions, amplitude spectra, and correlation dimensions, and we investigate how the properties of the quasiperiodic oscillations depend on the strengths of coupling between the silicon neurons. The potential advantages and disadvantages of quasiperiodic oscillations (torus) for biological neural systems and artificial neural networks are discussed.

Implementation of atomic layer etching of silicon: Scaling parameters, feasibility, and profile control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ranjan, Alok, E-mail: alok.ranjan@us.tel.com; Wang, Mingmei; Sherpa, Sonam D.

2016-05-15

Atomic or layer by layer etching of silicon exploits temporally segregated self-limiting adsorption and material removal steps to mitigate the problems associated with continuous or quasicontinuous (pulsed) plasma processes: selectivity loss, damage, and profile control. Successful implementation of atomic layer etching requires careful choice of the plasma parameters for adsorption and desorption steps. This paper illustrates how process parameters can be arrived at through basic scaling exercises, modeling and simulation, and fundamental experimental tests of their predictions. Using chlorine and argon plasma in a radial line slot antenna plasma source as a platform, the authors illustrate how cycle time, ionmore » energy, and radical to ion ratio can be manipulated to manage the deviation from ideality when cycle times are shortened or purges are incomplete. Cell based Monte Carlo feature scale modeling is used to illustrate profile outcomes. Experimental results of atomic layer etching processes are illustrated on silicon line and space structures such that iso-dense bias and aspect ratio dependent free profiles are produced. Experimental results also illustrate the profile control margin as processes move from atomic layer to multilayer by layer etching. The consequence of not controlling contamination (e.g., oxygen) is shown to result in deposition and roughness generation.« less

Tailored porous silicon microparticles: fabrication and properties

PubMed Central

Chiappini, Ciro; Tasciotti, Ennio; Fakhoury, Jean R.; Fine, Daniel; Pullan, Lee; Wang, Young-Chung; Fu, Lianfeng

2010-01-01

The use of mesoporous silicon particles for drug delivery has been widely explored thanks to their biodegradability and biocompatibility. The ability to tailor the physicochemical properties of porous silicon at the micro and nano scale confers versatility to this material. We present a method for the fabrication of highly reproducible, monodisperse mesoporous silicon particles with controlled physical characteristics through electrochemical etch of patterned silicon trenches. We tailored particle size in the micrometer range and pore size in the nanometer range, shape from tubular to discoidal to hemispherical, and porosity from 46% to over 80%. In addition, we correlated the properties of the porous matrix with the loading of model nanoparticles (Q-dots) and observed their three-dimensional arrangement within the matrix by transmission electron microscopy tomography. The methods developed in this study provide effective means to fabricate mesoporous silicon particles according to the principles of rational design for therapeutic vectors and to characterize the distribution of nanoparticles within the porous matrix PMID:20162656

Stress and efficiency studies in EFG

NASA Technical Reports Server (NTRS)

1986-01-01

The goals of this program were: (1) to define minimum stress configurations for silicon sheet growth at high speeds; (2) to quantify dislocation electrical activity and their limits on minority carrier diffusion length in deformed silicon; and (3) to study reasons for degradation of lifetime with increases in doping level in edge-defined film-fed growth (EFG) materials. A finite element model was developed for calculating residual stress with plastic deformation. A finite element model was verified for EFG control variable relationships to temperature field of the sheet to permit prediction of profiles and stresses encountered in EFG systems. A residual stress measurement technique was developed for finite size EFG material blanks using shadow Moire interferometry. Transient creep response of silicon was investigated in the temperature range between 800 and 1400 C in strain and strain regimes of interest in stress analysis of sheet growth. Quantitative relationships were established between minority carrier diffusion length and dislocation densities using Electron Beam Induced Current (EBIC) measurement in FZ silicon deformed in four point bending tests.

Silicon quantum processor with robust long-distance qubit couplings.

PubMed

Tosi, Guilherme; Mohiyaddin, Fahd A; Schmitt, Vivien; Tenberg, Stefanie; Rahman, Rajib; Klimeck, Gerhard; Morello, Andrea

2017-09-06

Practical quantum computers require a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a platform adapted from industrial semiconductor processing. Here we present a scalable design for a silicon quantum processor that does not require precise donor placement and leaves ample space for the routing of interconnects and readout devices. We introduce the flip-flop qubit, a combination of the electron-nuclear spin states of a phosphorus donor that can be controlled by microwave electric fields. Two-qubit gates exploit a second-order electric dipole-dipole interaction, allowing selective coupling beyond the nearest-neighbor, at separations of hundreds of nanometers, while microwave resonators can extend the entanglement to macroscopic distances. We predict gate fidelities within fault-tolerance thresholds using realistic noise models. This design provides a realizable blueprint for scalable spin-based quantum computers in silicon.Quantum computers will require a large network of coherent qubits, connected in a noise-resilient way. Tosi et al. present a design for a quantum processor based on electron-nuclear spins in silicon, with electrical control and coupling schemes that simplify qubit fabrication and operation.

Weakly modulated silicon-dioxide-cladding gratings for silicon waveguide Fabry-Pérot cavities.

PubMed

Grote, Richard R; Driscoll, Jeffrey B; Biris, Claudiu G; Panoiu, Nicolae C; Osgood, Richard M

2011-12-19

We show by theory and experiment that silicon-dioxide-cladding gratings for Fabry-Pérot cavities on silicon-on-insulator channel ("wire") waveguides provide a low-refractive-index perturbation, which is required for several important integrated photonics components. The underlying refractive index perturbation of these gratings is significantly weaker than that of analogous silicon gratings, leading to finer control of the coupling coefficient κ. Our Fabry-Pérot cavities are designed using the transfer-matrix method (TMM) in conjunction with the finite element method (FEM) for calculating the effective index of each waveguide section. Device parameters such as coupling coefficient, κ, Bragg mirror stop band, Bragg mirror reflectivity, and quality factor Q are examined via TMM modeling. Devices are fabricated with representative values of distributed Bragg reflector lengths, cavity lengths, and propagation losses. The measured transmission spectra show excellent agreement with the FEM/TMM calculations.

Calibration of silicone rubber rods as passive samplers for pesticides at two different flow velocities: Modeling of sampling rates under water boundary layer and polymer control.

PubMed

Martin, Alexis; Margoum, Christelle; Jolivet, Antoine; Assoumani, Azziz; El Moujahid, Bachir; Randon, Jérôme; Coquery, Marina

2018-04-01

There is a need to determine time-weighted average concentrations of polar contaminants such as pesticides by passive sampling in environmental waters. Calibration data for silicone rubber-based passive samplers are lacking for this class of compounds. The calibration data, sampling rate (R s ), and partition coefficient between silicone rubber and water (K sw ) were precisely determined for 23 pesticides and 13 candidate performance reference compounds (PRCs) in a laboratory calibration system over 14 d for 2 water flow velocities, 5 and 20 cm s -1 . The results showed that an in situ exposure duration of 7 d left a silicone rubber rod passive sampler configuration in the linear or curvilinear uptake period for 19 of the pesticides studied. A change in the transport mechanism from polymer control to water boundary layer control was observed for pesticides with a log K sw of approximately 3.3. The PRC candidates were not fully relevant to correct the impact of water flow velocity on R s . We therefore propose an alternative method based on an overall resistance to mass transfer model to adjust R s from laboratory experiments to in situ hydrodynamic conditions. We estimated diffusion coefficients (D s ) and thickness of water boundary layer (δ w ) as adjustable model parameters. Log D s values ranged from -12.13 to -10.07 m 2  s -1 . The estimated δ w value showed a power function correlation with water flow velocity. Environ Toxicol Chem 2018;37:1208-1218. © 2017 SETAC. © 2017 SETAC.

Methods of measurement for semiconductor materials, process control, and devices

NASA Technical Reports Server (NTRS)

Bullis, W. M. (Editor)

1972-01-01

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Accomplishments include the determination of the reasons for differences in measurements of transistor delay time, identification of an energy level model for gold-doped silicon, and the finding of evidence that it does not appear to be necessary for an ultrasonic bonding tool to grip the wire and move it across the substrate metallization to make the bond. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time, and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors.

Atomic Oxygen Interactions With Silicone Contamination on Spacecraft in Low Earth Orbit Studied

NASA Technical Reports Server (NTRS)

Banks, Bruce A.

2001-01-01

Silicones have been widely used on spacecraft as potting compounds, adhesives, seals, gaskets, hydrophobic surfaces, and atomic oxygen protective coatings. Contamination of optical and thermal control surfaces on spacecraft in low Earth orbit (LEO) has been an ever-present problem as a result of the interaction of atomic oxygen with volatile species from silicones and hydrocarbons onboard spacecraft. These interactions can deposit a contaminant that is a risk to spacecraft performance because it can form an optically absorbing film on the surfaces of Sun sensors, star trackers, or optical components or can increase the solar absorptance of thermal control surfaces. The transmittance, absorptance, and reflectance of such contaminant films seem to vary widely from very transparent SiOx films to much more absorbing SiOx-based films that contain hydrocarbons. At the NASA Glenn Research Center, silicone contamination that was oxidized by atomic oxygen has been examined from LEO spacecraft (including the Long Duration Exposure Facility and the Mir space station solar arrays) and from ground laboratory LEO simulations. The findings resulted in the development of predictive models that may help explain the underlying issues and effects. Atomic oxygen interactions with silicone volatiles and mixtures of silicone and hydrocarbon volatiles produce glassy SiOx-based contaminant coatings. The addition of hydrocarbon volatiles in the presence of silicone volatiles appears to cause much more absorbing (and consequently less transmitting) contaminant films than when no hydrocarbon volatiles are present. On the basis of the LDEF and Mir results, conditions of high atomic oxygen flux relative to low contaminant flux appear to result in more transparent contaminant films than do conditions of low atomic oxygen flux with high contaminant flux. Modeling predictions indicate that the deposition of contaminant films early in a LEO flight should depend much more on atomic oxygen flux than it does later in a mission.

Tissue adhesion to bioactive glass-coated silicone tubing in a rat model of peritoneal dialysis catheters and catheter tunnels.

PubMed

Ross, Edward A; Batich, Christopher D; Clapp, William L; Sallustio, Judith E; Lee, Nadeen C

2003-02-01

Silicone peritoneal dialysis catheters do not develop tissue ingrowth, lack a mechanical barrier to periluminal bacterial migration and need cuffs for anchorage. We hypothesized that a bioactive glass coating composed of silicon, calcium, sodium and phosphorous oxides would cause a beneficial tissue reaction causing catheter adhesion, and tested this in a rat model. A hexane solvent-based method of coating silicone tubes with Bioglass powder was used, which maintained flexibility, and then the ultrastructure was confirmed with scanning electron microscopy (EM). Segments 2.5 cm were implanted subcutaneously in 8 Sprague-Dawley rats, with uncoated tubes as a contralateral control, and histology was done at 2, 4 and 6 weeks, including special stains and EM. The uncoated segments grossly had no adherence to surrounding tissue, and were physically separate from a thin fibrous capsule of approximately 50 micro width. Trichrome stains demonstrated the capsule was rich in collagen. There was minimal adjacent tissue reaction. In contrast, the coated tubes were palpably fixed to the soft tissues, and sections demonstrated an adjacent prominent layer of macrophages and multinucleated giant cells. Small numbers of lymphocytes were noted. This cellular reaction increased over the 6-week implant duration, and was also associated with neovascularization of the tissue adjacent to the segments (33 vessels in coated vs. 20 in controls per x 200 field, P < 0.0001). Many refractile silicone particles and prominent multinucleated giant cells were present, with small numbers of lymphocytes and macrophages. Stains showed scattered discontinuous calcific deposits. These findings are consistent with reports that the Bioglass(R) silicon oxide leads to the formation of a layer of hydroxyapatite, which binds to collagen and induces a tissue cellular reaction. In summary, bioactive glass coatings can improve the tissue retention of silicone tubing by promoting adhesion by collagen and cell proliferation, and are promising for future studies of peritoneal dialysis catheters.

Strategies to improve electrode positioning and safety in cochlear implants.

PubMed

Rebscher, S J; Heilmann, M; Bruszewski, W; Talbot, N H; Snyder, R L; Merzenich, M M

1999-03-01

An injection-molded internal supporting rib has been produced to control the flexibility of silicone rubber encapsulated electrodes designed to electrically stimulate the auditory nerve in human subjects with severe to profound hearing loss. The rib molding dies, and molds for silicone rubber encapsulation of the electrode, were designed and machined using AutoCad and MasterCam software packages in a PC environment. After molding, the prototype plastic ribs were iteratively modified based on observations of the performance of the rib/silicone composite insert in a clear plastic model of the human scala tympani cavity. The rib-based electrodes were reliably inserted farther into these models, required less insertion force and were positioned closer to the target auditory neural elements than currently available cochlear implant electrodes. With further design improvements the injection-molded rib may also function to accurately support metal stimulating contacts and wire leads during assembly to significantly increase the manufacturing efficiency of these devices. This method to reliably control the mechanical properties of miniature implantable devices with multiple electrical leads may be valuable in other areas of biomedical device design.

The effect of disinfectants on dimensional stability of addition and condensation silicone impressions.

PubMed

Sinobad, Tamara; Obradović-Djuricić, Kosovka; Nikolić, Zoran; Dodić, Slobodan; Lazić, Vojkan; Sinobad, Vladimir; Jesenko-Rokvić, Aleksandra

2014-03-01

Dimensional stability and accuracy of an impression after chemical disinfection by immersion in disinfectants are crucial for the accuracy of final prosthetic restorations. The aim of this study was to assess the deformation of addition and condensation silicone impressions after disinfection in antimicrobial solutions. A total of 120 impressions were made on the model of the upper arch representing three full metal-ceramic crown preparations. Four impression materials were used: two condensation silicones (Oranwash L - Zhermack and Xantopren L Blue - Heraeus Kulzer) and two addition silicones (Elite H-D + regular body - Zhermack and Flexitime correct flow - Heraeus Kulzer). After removal from the model the impressions were immediatel immersed in appropriate disinfectant (glutaraldehyde, benzalkonium chloride - Sterigum and 5.25% NaOC1) for a period of 10 min. The control group consisted of samples that were not treated with disinfectant solution. Consecutive measurements of identical impressions were realized with a Canon G9 (12 megapixels, 2 fps, 6x/24x), and automated with a computer Asus Lamborghini VX-2R Intel C2D 2.4 GHz, by using Remote Capture software package, so that time-depending series of images of the same impression were obtained. The dimensional changes of all the samples were significant both as a function of time and the applied disinfectant. The results show significant differences of the obtained dimensional changes between the group of condensation silicones and the group of addition silicones for the same time, and the same applied disinfectant (p = 0.026, F = 3.95). The greatest dimensional changes of addition and condensation silicone impressions appear in the first hour after their separation from the model.

Steric stabilization of nonaqueous silicon slips. I - Control of particle agglomeration and packing. II - Pressure casting of powder compacts

NASA Technical Reports Server (NTRS)

Kerkar, Awdhoot V.; Henderson, Robert J. M.; Feke, Donald L.

1990-01-01

The application of steric stabilization to control particle agglomeration and packing of silicon powder in benzene and trichloroethylene is reported. The results provide useful guidelines for controlling unfavorable particle-particle interactions during nonaqueous processing of silicon-based ceramic materials. The application of steric stabilization to the control and improvement of green processing of nonaqueous silicon slips in pressure consolidation is also demonstrated.

Polycrystalline silicon thin-film transistors with location-controlled crystal grains fabricated by excimer laser crystallization

NASA Astrophysics Data System (ADS)

Tsai, Chun-Chien; Lee, Yao-Jen; Chiang, Ko-Yu; Wang, Jyh-Liang; Lee, I.-Che; Chen, Hsu-Hsin; Wei, Kai-Fang; Chang, Ting-Kuo; Chen, Bo-Ting; Cheng, Huang-Chung

2007-11-01

In this paper, location-controlled silicon crystal grains are fabricated by the excimer laser crystallization method which employs amorphous silicon spacer structure and prepatterned thin films. The amorphous silicon spacer in nanometer-sized width formed using spacer technology is served as seed crystal to artificially control superlateral growth phenomenon during excimer laser irradiation. An array of 1.8-μm-sized disklike silicon grains is formed, and the n-channel thin-film transistors whose channels located inside the artificially-controlled crystal grains exhibit higher performance of field-effect-mobility reaching 308cm2/Vs as compared with the conventional ones. This position-manipulated silicon grains are essential to high-performance and good uniformity devices.

Energetic Beam Processing of Silicon to Engineer Optoelectronically Active Defects

NASA Astrophysics Data System (ADS)

Recht, Daniel

This thesis explores ways to use ion implantation and nanosecond pulsed laser melting, both energetic beam techniques, to engineer defects in silicon. These defects are chosen to facilitate the use of silicon in optoelectronic applications for which its indirect bandgap is not ideal. Chapter 2 develops a kinetic model for the use of point defects as luminescence centers for light-emitting diodes and demonstrates an experimental procedure capable of high-throughput screening of the electroluminescent properties of such defects. Chapter 3 discusses the dramatic change in optical absorption observed in silicon highly supersaturated (i.e., hyperdoped) with the chalcogens sulfur, selenium, and tellurium and reports the first measurements of the optical absorption of such materials for photon energies greater than the bandgap of silicon. Chapter 3 examines the use of silicon hyperdoped with chalcogens in light detectors and concludes that while these devices display strong internal gain that is coupled to a particular type of surface defect, hyperdoping with chalcogens does not lead directly to measurable sub-bandgap photoconductivity. Chapter 4 considers the potential for Silicon to serve as the active material in an intermediate-band solar cell and reports experimental progress on two proposed approaches for hyperdoping silicon for this application. The main results of this chapter are the use of native-oxide etching to control the surface evaporation rate of sulfur from silicon and the first synthesis of monocrystalline silicon hyperdoped with gold.

Numerical modeling of heat transfer in molten silicon during directional solidification process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Srinivasan, M.; Ramasamy, P., E-mail: ramasamyp@ssn.edu.in

2015-06-24

Numerical investigation is performed for some of the thermal and fluid flow properties of silicon melt during directional solidification by numerical modeling. Dimensionless numbers are extremely useful to understand the heat and mass transfer of fluid flow on Si melt and control the flow patterns during crystal growth processes. The average grain size of whole crystal would increase when the melt flow is laminar. In the silicon growth process, the melt flow is mainly driven by the buoyancy force resulting from the horizontal temperature gradient. The thermal and flow pattern influences the quality of the crystal through the convective heatmore » and mass transport. The computations are carried out in a 2D axisymmetric model using the finite-element technique. The buoyancy effect is observed in the melt domain for a constant Rayleigh number and for different Prandtl numbers. The convective heat flux and Reynolds numbers are studied in the five parallel horizontal cross section of melt silicon region. And also, velocity field is simulated for whole melt domain with limited thermal boundaries. The results indicate that buoyancy forces have a dramatic effect on the most of melt region except central part.« less

Fabrication and characterization of resonant SOI micromechanical silicon sensors based on DRIE micromachining, freestanding release process and silicon direct bonding

NASA Astrophysics Data System (ADS)

Gigan, Olivier; Chen, Hua; Robert, Olivier; Renard, Stephane; Marty, Frederic

2002-11-01

This paper is dedicated to the fabrication and technological aspect of a silicon microresonator sensor. The entire project includes the fabrication processes, the system modelling/simulation, and the electronic interface. The mechanical model of such resonator is presented including description of frequency stability and Hysterises behaviour of the electrostatically driven resonator. Numeric model and FEM simulations are used to simulate the system dynamic behaviour. The complete fabrication process is based on standard microelectronics technology with specific MEMS technological steps. The key steps are described: micromachining on SOI by Deep Reactive Ion Etching (DRIE), specific release processes to prevent sticking (resist and HF-vapour release process) and collective vacuum encapsulation by Silicon Direct Bonding (SDB). The complete process has been validated and prototypes have been fabricated. The ASIC was designed to interface the sensor and to control the vibration amplitude. This electronic was simulated and designed to work up to 200°C and implemented in a standard 0.6μ CMOS technology. Characterizations of sensor prototypes are done both mechanically and electrostatically. These measurements showed good agreements with theory and FEM simulations.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

NASA Astrophysics Data System (ADS)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Flow cytometry: a promising technique for the study of silicone oil-induced particulate formation in protein formulations.

PubMed

Ludwig, D Brett; Trotter, Joseph T; Gabrielson, John P; Carpenter, John F; Randolph, Theodore W

2011-03-15

Subvisible particles in formulations intended for parenteral administration are of concern in the biopharmaceutical industry. However, monitoring and control of subvisible particulates can be complicated by formulation components, such as the silicone oil used for the lubrication of prefilled syringes, and it is difficult to differentiate microdroplets of silicone oil from particles formed by aggregated protein. In this study, we demonstrate the ability of flow cytometry to resolve mixtures comprising subvisible bovine serum albumin (BSA) aggregate particles and silicone oil emulsion droplets with adsorbed BSA. Flow cytometry was also used to investigate the effects of silicone oil emulsions on the stability of BSA, lysozyme, abatacept, and trastuzumab formulations containing surfactant, sodium chloride, or sucrose. To aid in particle characterization, the fluorescence detection capabilities of flow cytometry were exploited by staining silicone oil with BODIPY 493/503 and model proteins with Alexa Fluor 647. Flow cytometric analyses revealed that silicone oil emulsions induced the loss of soluble protein via protein adsorption onto the silicone oil droplet surface. The addition of surfactant prevented protein from adsorbing onto the surface of silicone oil droplets. There was minimal formation of homogeneous protein aggregates due to exposure to silicone oil droplets, although oil droplets with surface-adsorbed trastuzumab exhibited flocculation. The results of this study demonstrate the utility of flow cytometry as an analytical tool for monitoring the effects of subvisible silicone oil droplets on the stability of protein formulations. Copyright © 2010 Elsevier Inc. All rights reserved.

Predicting silicon pore optics

NASA Astrophysics Data System (ADS)

Vacanti, Giuseppe; Barriére, Nicolas; Bavdaz, Marcos; Chatbi, Abdelhakim; Collon, Maximilien; Dekker, Danielle; Girou, David; Günther, Ramses; van der Hoeven, Roy; Landgraf, Boris; Sforzini, Jessica; Vervest, Mark; Wille, Eric

2017-09-01

Continuing improvement of Silicon Pore Optics (SPO) calls for regular extension and validation of the tools used to model and predict their X-ray performance. In this paper we present an updated geometrical model for the SPO optics and describe how we make use of the surface metrology collected during each of the SPO manufacturing runs. The new geometrical model affords the user a finer degree of control on the mechanical details of the SPO stacks, while a standard interface has been developed to make use of any type of metrology that can return changes in the local surface normal of the reflecting surfaces. Comparisons between the predicted and actual performance of samples optics will be shown and discussed.

Utilizing Controlled Vibrations in a Microgravity Environment to Understand and Promote Microstructural Homogeneity During Floating-Zone Crystal Growth

NASA Technical Reports Server (NTRS)

Grugel, Richard N.

1999-01-01

It has been demonstrated in floating-zone configurations utilizing silicone oil and nitrate salts that mechanically induced vibration effectively minimizes detrimental, gravity independent, thermocapillary flow. The processing parameters leading to crystal improvement and aspects of the on-going modeling effort are discussed. Plans for applying the crystal growth technique to commercially relevant materials, e.g., silicon, as well as the value of processing in a microgravity environment are presented.

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks.

PubMed

Shen, Yiwen; Hattink, Maarten H N; Samadi, Payman; Cheng, Qixiang; Hu, Ziyiz; Gazman, Alexander; Bergman, Keren

2018-04-16

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. We present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly network testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 µs control plane latency for data-center and high performance computing platforms.

Control of the interaction strength of photonic molecules by nanometer precise 3D fabrication.

PubMed

Rawlings, Colin D; Zientek, Michal; Spieser, Martin; Urbonas, Darius; Stöferle, Thilo; Mahrt, Rainer F; Lisunova, Yuliya; Brugger, Juergen; Duerig, Urs; Knoll, Armin W

2017-11-28

Applications for high resolution 3D profiles, so-called grayscale lithography, exist in diverse fields such as optics, nanofluidics and tribology. All of them require the fabrication of patterns with reliable absolute patterning depth independent of the substrate location and target materials. Here we present a complete patterning and pattern-transfer solution based on thermal scanning probe lithography (t-SPL) and dry etching. We demonstrate the fabrication of 3D profiles in silicon and silicon oxide with nanometer scale accuracy of absolute depth levels. An accuracy of less than 1nm standard deviation in t-SPL is achieved by providing an accurate physical model of the writing process to a model-based implementation of a closed-loop lithography process. For transfering the pattern to a target substrate we optimized the etch process and demonstrate linear amplification of grayscale patterns into silicon and silicon oxide with amplification ratios of ∼6 and ∼1, respectively. The performance of the entire process is demonstrated by manufacturing photonic molecules of desired interaction strength. Excellent agreement of fabricated and simulated structures has been achieved.

Analysis of the effect of symmetric/asymmetric CUSP magnetic fields on melt/crystal interface during Czochralski silicon growth

NASA Astrophysics Data System (ADS)

Daggolu, Parthiv; Ryu, Jae Woo; Galyukov, Alex; Kondratyev, Alexey

2016-10-01

With the use of 300 mm silicon wafers for industrial semiconductor device manufacturing, the Czochralski (Cz) crystal growth process has to be optimized to achieve higher quality and productivity. Numerical studies based on 2D global thermal models combined with 3D simulation of melt convection are widely used today to save time and money in the process development. Melt convection in large scale Cz Si growth is controlled by a CUSP or transversal magnetic field (MF) to suppress the melt turbulence. MF can be optimized to meet necessary characteristics of the growing crystal, in terms of point defects, as MF affects the melt/crystal interface geometry and allows adjustment of the pulling rate. Among the different knobs associated with the CUSP magnetic field, the nature of its configuration, going from symmetric to asymmetric, is also reported to be an important tool for the control of crystallization front. Using a 3D unsteady model of the CGSim software, we have studied these effects and compared with several experimental results. In addition, physical mechanisms behind these observations are explored through a detailed modeling analysis of the effect of an asymmetric CUSP MF on convection features governing the heat transport in the silicon melt.

The role of the epidermis in the control of scarring: evidence for mechanism of action for silicone gel.

PubMed

Tandara, Andrea A; Mustoe, Thomas A

2008-10-01

Hypertrophic scars can be reduced by the application of silicone dressing; however, the detailed mechanism of silicone action is still unknown. It is known that silicone gel sheets cause a hydration of the epidermal layer of the skin. An in vitro co-culture experiment has shown that hydration of keratinocytes has a suppressive effect on the metabolism of the underlying fibroblasts resulting in reduced collagen deposition. We tested the hypothesis that silicone sheeting in vivo has a beneficial effect on scarring by reducing keratinocyte stimulation, with a resulting decrease in dermal thickness, hence scar hypertrophy. Silicone adhesive gel sheets were applied to scars in our rabbit ear model of hypertrophic scarring 14 days postwounding for a total of 16 days. Scarring was measured in this model by the scar elevation index (SEI), a ratio of the area of newly formed dermis to the area of the dermis of unwounded skin, and the epidermal thickness index (ETI), a ratio of the averaged epidermal height of the scar to the epidermal thickness of normal epidermis. Specific staining [anti-PCNA (proliferating cell nuclear antigen) and Masson trichrome] was performed to reveal differences in scar morphology. SEIs were significantly reduced after silicone gel sheet application versus untreated scars corresponding to a 70% reduction in scar hypertrophy. Total occlusion reduced scar hypertrophy by 80% compared to semi-occlusion. ETIs of untreated scars were increased by more than 100% compared to uninjured skin. Silicone gel treatment significantly reduced epidermal thickness by more than 30%. Our findings demonstrate that 2 weeks of silicone gel application at a very early onset of scarring reduces dermal and epidermal thickness which appears to be due to a reduction in keratinocyte stimulation. Oxygen can be ruled out as a mechanism of action of silicone occlusive treatment. Hydration of the keratinocytes seems to be the key stimulus.

Reactive Melt Infiltration of Silicon-Niobium Alloys in Microporous Carbons

NASA Technical Reports Server (NTRS)

Singh, M.; Behrendt, D. R.

1994-01-01

Studies of the reactive melt infiltration of silicon-niobium alloys in microporous carbon preforms prepared by the pyrolysis of a polymer precursor have been carried out using modeling, Differential Thermal Analysis (DTA), and melt infiltration. Mercury porosimetry results indicate a very narrow pore size distribution with virtually all the porosity within the carbon preforms open to infiltrants. The morphology and amount of the residual phases (niobium disilicide and silicon) in the infiltrated material can be tailored according to requirements by careful control of the properties (pore size and pore volume) of the porous carbon preforms and alloy composition. The average room temperature four-point flexural strength of a reaction-formed silicon carbide material (made by the infiltration of medium pore size carbon preform with Si - 5 at. % Nb alloy) is 290 +/- 40 MPa (42 +/- 6 ksi) and the fracture toughness is 3.7 +/- 0.3 MPa square root of m. The flexural strength decreases at high temperatures due to relaxation of residual thermal stresses and the presence of free silicon in the material.

Method for rapid, controllable growth and thickness, of epitaxial silicon films

DOEpatents

Wang, Qi [Littleton, CO; Stradins, Paul [Golden, CO; Teplin, Charles [Boulder, CO; Branz, Howard M [Boulder, CO

2009-10-13

A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

Effects of 22 MeV protons on single junction and silicon controlled rectifiers

NASA Technical Reports Server (NTRS)

Beatty, M. E., III

1972-01-01

The effects of 22-MeV protons on various types of silicon single junction and silicon controlled rectifiers were investigated. The results show that low-leakage devices and silicon controlled rectifiers are the most susceptable to radiation damage. There are also differences noted between single junction rectifiers of the same type made by different manufacturers, which emphasizes the need for better selection of devices used in spacecraft.

Curvature Control of Silicon Microlens for THz Dielectric Antenna

NASA Technical Reports Server (NTRS)

Lee, Choonsup; Chattopadhyay, Goutam; Cooper, Ken; Mehdi, Imran

2012-01-01

We have controlled the curvature of silicon microlens by changing the amount of photoresist in order to microfabricate hemispherical silicon microlens which can improve the directivity and reduce substrate mode losses.

Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

NASA Astrophysics Data System (ADS)

Czapski, M.; Stora, T.; Tardivat, C.; Deville, S.; Santos Augusto, R.; Leloup, J.; Bouville, F.; Fernandes Luis, R.

2013-12-01

New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLUKA codes.

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks

DOE PAGES

Shen, Yiwen; Hattink, Maarten; Samadi, Payman; ...

2018-04-13

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. Here, we present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly networkmore » testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 microsecond control plane latency for data-center and high performance computing platforms.« less

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, Yiwen; Hattink, Maarten; Samadi, Payman

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. Here, we present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly networkmore » testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 microsecond control plane latency for data-center and high performance computing platforms.« less

Photosensitized generation of singlet oxygen in porous silicon studied by simultaneous measurements of luminescence of nanocrystals and oxygen molecules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gongalsky, M. B.; Kharin, A. Yu.; Zagorodskikh, S. A.

2011-07-01

Photosensitization of singlet oxygen generation in porous silicon (PSi) was investigated by simultaneous measurements of the photoluminescence (PL) of silicon nanocrystals (nc-Si) and the infrared emission of the {sup 1}{Delta}-state of oxygen molecules at 1270 nm (0.98 eV) at room temperature. Photodegradation of the nc-Si PL properties was found to correlate with the efficiency of singlet oxygen generation. The quantum efficiency of singlet oxygen generation in PSi was estimated to be about 1%, while the lifetime of singlet oxygen was about fifteen ms. The kinetics of nc-Si PL intensity under cw excitation undergoes a power law dependence with the exponentmore » dependent on the photon energy of luminescence. The experimental results are explained with a model of photodegradation controlled by the diffusion of singlet oxygen molecules in a disordered structure of porous silicon.« less

Comparison of Spacecraft Contamination Models with Well-Defined Flight Experiment

NASA Technical Reports Server (NTRS)

Pippin, G. H.

1998-01-01

The report presents analyzed surface areas on particular experiment trays from the Long Duration Exposure Facility (LDEF) for silicone-based molecular contamination. The trays for examination were part of the Ultra-Heavy Cosmic Ray Experiment (UHCRE). These particular trays were chosen because each tray was identical to the others in construction, and the materials on each tray were well known, documented, and characterized. In particular, a known specific source of silicone contamination was present on each tray. Only the exposure conditions varied from tray to tray. The results of post-flight analyses of surfaces of three trays were compared with the predictions of the three different spacecraft molecular contamination models. Phase one tasks included: 1) documenting the detailed geometry of the hardware; 2) determining essential properties of the anodized aluminum, Velcro(Tm), silverized Teflon(Tm), silicone gaskets, and DC6-1104(Tm) silicone adhesive materials used to make the trays, tray covers, and thermal control blankets; 3) selecting and removing areas from each tray; and 4) beginning surface analysis of the selected tray walls. Phase two tasks included: 1) completion of surface analysis measurements of the selected tray surface, 2) obtaining auger depth profiles at selected locations, and 3) running versions of the ISEM, MOFLUX, and PLIMP (Plume Impingement) contamination prediction models and making comparisons with experimental results.

Road load simulator tests of the Gould phase 1 functional model silicon controlled rectifier ac motor controller for electric vehicles

NASA Astrophysics Data System (ADS)

Gourash, F.

1984-02-01

The test results for a functional model ac motor controller for electric vehicles and a three-phase induction motor which were dynamically tested on the Lewis Research Center road load simulator are presented. Results show that the controller has the capability to meet the SAE-J227a D cycle test schedule and to accelerate a 1576-kg (3456-lb) simulated vehicle to a cruise speed of 88.5 km/hr (55 mph). Combined motor controller efficiency is 72 percent and the power inverter efficiency alone is 89 percent for the cruise region of the D cycle. Steady state test results for motoring, regeneration, and thermal data obtained by operating the simulator as a conventional dynamometer are in agreement with the contractor's previously reported data. The regeneration test results indicate that a reduction in energy requirements for urban driving cycles is attainable with regenerative braking. Test results and data in this report serve as a data base for further development of ac motor controllers and propulsion systems for electric vehicles. The controller uses state-of-the-art silicon controlled rectifier (SCR) power semiconductors and microprocessor-based logic and control circuitry. The controller was developed by Gould Laboratories under a Lewis contract for the Department of Energy's Electric and Hybrid Vehicle program.

Road load simulator tests of the Gould phase 1 functional model silicon controlled rectifier ac motor controller for electric vehicles

NASA Technical Reports Server (NTRS)

Gourash, F.

1984-01-01

The test results for a functional model ac motor controller for electric vehicles and a three-phase induction motor which were dynamically tested on the Lewis Research Center road load simulator are presented. Results show that the controller has the capability to meet the SAE-J227a D cycle test schedule and to accelerate a 1576-kg (3456-lb) simulated vehicle to a cruise speed of 88.5 km/hr (55 mph). Combined motor controller efficiency is 72 percent and the power inverter efficiency alone is 89 percent for the cruise region of the D cycle. Steady state test results for motoring, regeneration, and thermal data obtained by operating the simulator as a conventional dynamometer are in agreement with the contractor's previously reported data. The regeneration test results indicate that a reduction in energy requirements for urban driving cycles is attainable with regenerative braking. Test results and data in this report serve as a data base for further development of ac motor controllers and propulsion systems for electric vehicles. The controller uses state-of-the-art silicon controlled rectifier (SCR) power semiconductors and microprocessor-based logic and control circuitry. The controller was developed by Gould Laboratories under a Lewis contract for the Department of Energy's Electric and Hybrid Vehicle program.

Silicone Polymer Composites for Thermal Protection System: Fiber Reinforcements and Microstructures

DTIC Science & Technology

2010-01-01

angles were tested. Detailed microstructural, mass loss, and peak erosion analyses were conducted on the phenolic -based matrix composite (control) and...silicone-based matrix composites to understand their protective mechanisms. Keywords silicone polymer matrix composites, phenolic polymer matrix...erosion analyses were conducted on the phenolic -based matrix composite (control) and silicone-based matrix composites to understand their protective

Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

PubMed

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Study of drug release and tablet characteristics of silicone adhesive matrix tablets.

PubMed

Tolia, Gaurav; Li, S Kevin

2012-11-01

Matrix tablets of a model drug acetaminophen (APAP) were prepared using a highly compressible low glass transition temperature (T(g)) polymer silicone pressure sensitive adhesive (PSA) at various binary mixtures of silicone PSA/APAP ratios. Matrix tablets of a rigid high T(g) matrix forming polymer ethyl cellulose (EC) were the reference for comparison. Drug release study was carried out using USP Apparatus 1 (basket), and the relationship between the release kinetic parameters of APAP and polymer/APAP ratio was determined to estimate the excipient percolation threshold. The critical points attributed to both silicone PSA and EC tablet percolation thresholds were found to be between 2.5% and 5% w/w. For silicone PSA tablets, satisfactory mechanical properties were obtained above the polymer percolation threshold; no cracking or chipping of the tablet was observed above this threshold. Rigid EC APAP tablets showed low tensile strength and high friability. These results suggest that silicone PSA could eliminate issues related to drug compressibility in the formulation of directly compressed oral controlled release tablets of poorly compressible drug powder such as APAP. No routinely used excipients such as binders, granulating agents, glidants, or lubricants were required for making an acceptable tablet matrix of APAP using silicone PSA. Copyright © 2012 Elsevier B.V. All rights reserved.

Thin film oxygen partial pressure sensor

NASA Technical Reports Server (NTRS)

Wortman, J. J.; Harrison, J. W.; Honbarrier, H. L.; Yen, J.

1972-01-01

The development is described of a laboratory model oxygen partial pressure sensor using a sputtered zinc oxide thin film. The film is operated at about 400 C through the use of a miniature silicon bar. Because of the unique resistance versus temperature relation of the silicon bar, control of the operational temperature is achieved by controlling the resistance. A circuit for accomplishing this is described. The response of sputtered zinc oxide films of various thicknesses to oxygen, nitrogen, argon, carbon dioxide, and water vapor caused a change in the film resistance. Over a large range, film conductance varied approximately as the square root of the oxygen partial pressure. The presence of water vapor in the gas stream caused a shift in the film conductance at a given oxygen partial pressure. A theoretical model is presented to explain the characteristic features of the zinc oxide response to oxygen.

Mechanism of erosion of nanostructured porous silicon drug carriers in neoplastic tissues

PubMed Central

Tzur-Balter, Adi; Shatsberg, Zohar; Beckerman, Margarita; Segal, Ester; Artzi, Natalie

2015-01-01

Nanostructured porous silicon (PSi) is emerging as a promising platform for drug delivery owing to its biocompatibility, degradability and high surface area available for drug loading. The ability to control PSi structure, size and porosity enables programming its in vivo retention, providing tight control over embedded drug release kinetics. In this work, the relationship between the in vitro and in vivo degradation of PSi under (pre)clinically relevant conditions, using breast cancer mouse model, is defined. We show that PSi undergoes enhanced degradation in diseased environment compared with healthy state, owing to the upregulation of reactive oxygen species (ROS) in the tumour vicinity that oxidize the silicon scaffold and catalyse its degradation. We further show that PSi degradation in vitro and in vivo correlates in healthy and diseased states when ROS-free or ROS-containing media are used, respectively. Our work demonstrates that understanding the governing mechanisms associated with specific tissue microenvironment permits predictive material performance. PMID:25670235

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

PubMed Central

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. PMID:22319353

Atomistic simulations of carbon diffusion and segregation in liquid silicon

NASA Astrophysics Data System (ADS)

Luo, Jinping; Alateeqi, Abdullah; Liu, Lijun; Sinno, Talid

2017-12-01

The diffusivity of carbon atoms in liquid silicon and their equilibrium distribution between the silicon melt and crystal phases are key, but unfortunately not precisely known parameters for the global models of silicon solidification processes. In this study, we apply a suite of molecular simulation tools, driven by multiple empirical potential models, to compute diffusion and segregation coefficients of carbon at the silicon melting temperature. We generally find good consistency across the potential model predictions, although some exceptions are identified and discussed. We also find good agreement with the range of available experimental measurements of segregation coefficients. However, the carbon diffusion coefficients we compute are significantly lower than the values typically assumed in continuum models of impurity distribution. Overall, we show that currently available empirical potential models may be useful, at least semi-quantitatively, for studying carbon (and possibly other impurity) transport in silicon solidification, especially if a multi-model approach is taken.

Model for the formation of silicon carbide from the pyrolysis of dichlorodimethylsilane in hydrogen. I - Silicon formation from chlorosilanes. II - Silicon carbide formation from silicon and methane

NASA Technical Reports Server (NTRS)

Cagliostro, Domenick E.; Riccitiello, Salvatore R.

1993-01-01

In the first part of this work, a model is developed for the deposition of silicon from the reduction of silicon tetrachloride with hydrogen in a tubular reactor at 700-1100 C, at atmospheric pressure. The model is based on gas chromatography of the volatile products of the reaction, followed by gravimetric analysis of total Si deposition on the tube. In the second part of this work, a model is developed for the case of SiC deposition from the pyrolysis of dichlorodimethylsilane in hydrogen under the same reactor conditions. The rate constants derived from a nonlinear regression analysis are reported.

Ultrasonics and Optics Would Control Shot Size

NASA Technical Reports Server (NTRS)

Morrison, A. D.

1983-01-01

Feedback system assures production of silicon shot of uniform size. Breakup of silicon stream into drops is controlled, in part, by varying frequency of vibrations imparted to stream by ultrasonic transducer. Drop size monitored by photodetector. Control method particularly advantageous in that constant size is maintained even while other process variables are changed deliberately or inadvertently. Applicable to materials other than silicon.

Silicon as a model ion trap: Time domain measurements of donor Rydberg states

PubMed Central

Vinh, N. Q.; Greenland, P. T.; Litvinenko, K.; Redlich, B.; van der Meer, A. F. G.; Lynch, S. A.; Warner, M.; Stoneham, A. M.; Aeppli, G.; Paul, D. J.; Pidgeon, C. R.; Murdin, B. N.

2008-01-01

One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the vacuum, and the loosely bound electron orbiting a singly charged core has a hydrogen-like spectrum according to the usual Bohr–Sommerfeld formula, shifted to the far-infrared because of the small effective mass and high dielectric constant. Manipulation of Rydberg states in free atoms and ions by single and multiphoton processes has been tremendously productive since the development of pulsed visible laser spectroscopy. The analogous manipulations have not been conducted for donor impurities in silicon. Here, we use the FELIX pulsed free electron laser to perform time-domain measurements of the Rydberg state dynamics in phosphorus- and arsenic-doped silicon and we have obtained lifetimes consistent with frequency domain linewidths for isotopically purified silicon. This implies that the dominant decoherence mechanism for excited Rydberg states is lifetime broadening, just as for atoms in ion traps. The experiments are important because they represent a step toward coherent control and manipulation of atomic-like quantum levels in the most common semiconductor and complement magnetic resonance experiments in the literature, which show extraordinarily long spin lattice relaxation times—key to many well known schemes for quantum computing qubits—for the same impurities. Our results, taken together with the magnetic resonance data and progress in precise placement of single impurities, suggest that doped silicon, the basis for modern microelectronics, is also a model ion trap.

Design and characterization of biofunctional magnetic porous silicon flakes.

PubMed

Muñoz Noval, A; García, R; Ruiz Casas, D; Losada Bayo, D; Sánchez Vaquero, V; Torres Costa, V; Martín Palma, R J; García, M A; García Ruiz, J P; Serrano Olmedo, J J; Muñoz Negrete, J F; del Pozo Guerrero, F; Manso Silván, M

2013-04-01

Magnetic porous silicon flakes (MPSF) were obtained from mesoporous silicon layers formed by multi-step anodization and subsequent composite formation with Fe oxide nanoparticles by thermal annealing. The magnetic nanoparticles adhered to the surface and penetrated inside the pores. Their structure evolved as a result of the annealing treatments derived from X-ray diffraction and X-ray absorption analyses. Moreover, by tailoring the magnetic load, the dynamic and hydrodynamic properties of the particles were controlled, as observed by the pressure displayed against a sensor probe. Preliminary functionality experiments were performed using an eye model, seeking potential use of MPSF as reinforcement for restored detached retina. It was observed that optimal flake immobilization is obtained when the MPSF reach values of magnetic saturation >10(-4)Am(2)g(-1). Furthermore, the MPSF were demonstrated to be preliminarily biocompatible in vitro. Moreover, New Zealand rabbit in vivo models demonstrated their short-term histocompatibility and their magnetic functionality as retina pressure actuators. Copyright © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

High-Bandgap Silicon Nanocrystal Solar Cells: Device Fabrication, Characterization, and Modeling

NASA Astrophysics Data System (ADS)

Löper, Philipp; Canino, Mariaconcetta; Schnabel, Manuel; Summonte, Caterina; Janz, Stefan; Zacharias, Margit

Silicon nanocrystals (Si NCs) embedded in Si-based dielectrics provide a Si-based high-bandgap material (1.7 eV) and enable the construction of crystalline Si tandem solar cells. This chapter focusses on Si NC embedded in silicon carbide, because silicon carbide offers electrical conduction through the matrix material. The material development is reviewed, and optical modeling is introduced as a powerful method to monitor the four material components, amorphous and crystalline silicon as well as amorphous and crystalline silicon carbide. In the second part of this chapter, recent device developments for the photovoltaic characterization of Si NCs are examined. The controlled growth of Si NCs involves high-temperature annealing which deteriorates the properties of any previously established selective contacts. A membrane-based device is presented to overcome these limitations. In this approach, the formation of both selective contacts is carried out after high-temperature annealing and is therefore not affected by the latter. We examine p-i-n solar cells with an intrinsic region made of Si NCs embedded in silicon carbide. Device failure due to damaged insulation layers is analyzed by light beam-induced current measurements. An optical model of the device is presented for improving the cell current. A characterization scheme for Si NC p-i-n solar cells is presented which aims at determining the fundamental transport and recombination properties, i.e., the effective mobility lifetime product, of the nanocrystal layer at device level. For this means, an illumination-dependent analysis of Si NC p-i-n solar cells is carried out within the framework of the constant field approximation. The analysis builds on an optical device model, which is used to assess the photogenerated current in each of the device layers. Illumination-dependent current-voltage curves are modelled with a voltage-dependent current collection function with only two free parameters, and excellent agreement is found between theory and experiment. An effective mobility lifetime product of 10-10 cm2/V is derived and confirmed independently from an alternative method. The procedure discussed in this chapter is proposed as a characterization scheme for further material development, providing an optimization parameter (the effective mobility lifetime product) relevant for the photovoltaic performance of Si NC films.

Confined in-fiber solidification and structural control of silicon and silicon-germanium microparticles.

PubMed

Gumennik, Alexander; Levy, Etgar C; Grena, Benjamin; Hou, Chong; Rein, Michael; Abouraddy, Ayman F; Joannopoulos, John D; Fink, Yoel

2017-07-11

Crystallization of microdroplets of molten alloys could, in principle, present a number of possible morphological outcomes, depending on the symmetry of the propagating solidification front and its velocity, such as axial or spherically symmetric species segregation. However, because of thermal or constitutional supercooling, resulting droplets often only display dendritic morphologies. Here we report on the crystallization of alloyed droplets of controlled micrometer dimensions comprising silicon and germanium, leading to a number of surprising outcomes. We first produce an array of silicon-germanium particles embedded in silica, through capillary breakup of an alloy-core silica-cladding fiber. Heating and subsequent controlled cooling of individual particles with a two-wavelength laser setup allows us to realize two different morphologies, the first being a silicon-germanium compositionally segregated Janus particle oriented with respect to the illumination axis and the second being a sphere made of dendrites of germanium in silicon. Gigapascal-level compressive stresses are measured within pure silicon solidified in silica as a direct consequence of volume-constrained solidification of a material undergoing anomalous expansion. The ability to generate microspheres with controlled morphology and unusual stresses could pave the way toward advanced integrated in-fiber electronic or optoelectronic devices.

Mathematical model of silicon smelting process basing on pelletized charge from technogenic raw materials

NASA Astrophysics Data System (ADS)

Nemchinova, N. V.; Tyutrin, A. A.; Salov, V. M.

2018-03-01

The silicon production process in the electric arc reduction furnaces (EAF) is studied using pelletized charge as an additive to the standard on the basis of the generated mathematical model. The results obtained due to the model will contribute to the analysis of the charge components behavior during melting with the achievement of optimum final parameters of the silicon production process. The authors proposed using technogenic waste as a raw material for the silicon production in a pelletized form using liquid glass and aluminum production dust from the electrostatic precipitators as a binder. The method of mathematical modeling with the help of the ‘Selector’ software package was used as a basis for the theoretical study. A model was simulated with the imitation of four furnace temperature zones and a crystalline silicon phase (25 °C). The main advantage of the created model is the ability to analyze the behavior of all burden materials (including pelletized charge) in the carbothermic process. The behavior analysis is based on the thermodynamic probability data of the burden materials interactions in the carbothermic process. The model accounts for 17 elements entering the furnace with raw materials, electrodes and air. The silicon melt, obtained by the modeling, contained 91.73 % wt. of the target product. The simulation results showed that in the use of the proposed combined charge, the recovery of silicon reached 69.248 %, which is in good agreement with practical data. The results of the crystalline silicon chemical composition modeling are compared with the real silicon samples of chemical analysis data, which showed the results of convergence. The efficiency of the mathematical modeling methods in the studying of the carbothermal silicon obtaining process with complex interphase transformations and the formation of numerous intermediate compounds using a pelletized charge as an additive to the traditional one is shown.

Passivation of InGaAs(001)-(2 × 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer.

PubMed

Edmonds, Mary; Kent, Tyler; Chagarov, Evgueni; Sardashti, Kasra; Droopad, Ravi; Chang, Mei; Kachian, Jessica; Park, Jun Hong; Kummel, Andrew

2015-07-08

A saturated Si-Hx seed layer for gate oxide or contact conductor ALD has been deposited via two separate self-limiting and saturating CVD processes on InGaAs(001)-(2 × 4) at substrate temperatures of 250 and 350 °C. For the first self-limiting process, a single silicon precursor, Si3H8, was dosed at a substrate temperature of 250 °C, and XPS results show the deposited silicon hydride layer saturated at about 4 monolayers of silicon coverage with hydrogen termination. STS results show the surface Fermi level remains unpinned following the deposition of the saturated silicon hydride layer, indicating the InGaAs surface dangling bonds are electrically passivated by Si-Hx. For the second self-limiting process, Si2Cl6 was dosed at a substrate temperature of 350 °C, and XPS results show the deposited silicon chloride layer saturated at about 2.5 monolayers of silicon coverage with chlorine termination. Atomic hydrogen produced by a thermal gas cracker was subsequently dosed at 350 °C to remove the Si-Cl termination by replacing with Si-H termination as confirmed by XPS, and STS results confirm the saturated Si-Hx bilayer leaves the InGaAs(001)-(2 × 4) surface Fermi level unpinned. Density function theory modeling of silicon hydride surface passivation shows an Si-Hx monolayer can remove all the dangling bonds and leave a charge balanced surface on InGaAs.

Thermal conductivity of amorphous and nanocrystalline silicon films prepared by hot-wire chemical-vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jugdersuren, B.; Kearney, B. T.; Queen, D. R.

We report 3..omega.. thermal conductivity measurements of amorphous and nanocrystalline silicon thin films from 85 to 300 K prepared by hot-wire chemical-vapor deposition, where the crystallinity of the films is controlled by the hydrogen dilution during growth. The thermal conductivity of the amorphous silicon film is in agreement with several previous reports of amorphous silicon prepared by a variety of deposition techniques. The thermal conductivity of the as-grown nanocrystalline silicon film is 70% higher and increases 35% more after an anneal at 600 degrees C. They all have similarly weak temperature dependence. Structural analysis shows that the as-grown nanocrystalline siliconmore » is approximately 60% crystalline, nanograins and grain boundaries included. The nanograins, averaging 9.1 nm in diameter in the as-grown film, are embedded in an amorphous matrix. The grain size increases to 9.7 nm upon annealing, accompanied by the disappearance of the amorphous phase. We extend the models of grain boundary scattering of phonons with two different non-Debye dispersion relations to explain our result of nanocrystalline silicon, confirming the strong grain size dependence of heat transport for nanocrystalline materials. However, the similarity in thermal conductivity between amorphous and nanocrystalline silicon suggests the heat transport mechanisms in both structures may not be as dissimilar as we currently understand.« less

Silicon quantum processor with robust long-distance qubit couplings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tosi, Guilherme; Mohiyaddin, Fahd A.; Schmitt, Vivien

Practical quantum computers require a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a platform adapted from industrial semiconductor processing. Here we present a scalable design for a silicon quantum processor that does not require precise donor placement and leaves ample space for the routing of interconnects and readout devices. We introduce the flip-flop qubit, a combination of the electron-nuclear spin states of a phosphorus donor that can be controlled by microwave electric fields. Two-qubit gates exploit a second-order electric dipole-dipole interaction, allowingmore » selective coupling beyond the nearest-neighbor, at separations of hundreds of nanometers, while microwave resonators can extend the entanglement to macroscopic distances. We predict gate fidelities within fault-tolerance thresholds using realistic noise models. This design provides a realizable blueprint for scalable spin-based quantum computers in silicon.« less

PECVD silicon-rich nitride and low stress nitride films mechanical characterization using membrane point load deflection

NASA Astrophysics Data System (ADS)

Bagolini, Alvise; Picciotto, Antonino; Crivellari, Michele; Conci, Paolo; Bellutti, Pierluigi

2016-02-01

An analysis of the mechanical properties of plasma enhanced chemical vapor (PECVD) silicon nitrides is presented, using micro fabricated silicon nitride membranes under point load deflection. The membranes are made of PECVD silicon-rich nitride and low stress nitride films. The mechanical performance of the bended membranes is examined both with analytical models and finite element simulation in order to extract the elastic modulus and residual stress values. The elastic modulus of low stress silicon nitride is calculated using stress free analytical models, while for silicon-rich silicon nitride and annealed low stress silicon nitride it is estimated with a pre-stressed model of point-load deflection. The effect of annealing both in nitrogen and hydrogen atmosphere is evaluated in terms of residual stress, refractive index and thickness variation. It is demonstrated that a hydrogen rich annealing atmosphere induces very little change in low stress silicon nitride. Nitrogen annealing effects are measured and shown to be much higher in silicon-rich nitride than in low stress silicon nitride. An estimate of PECVD silicon-rich nitride elastic modulus is obtained in the range between 240-320 GPa for deposited samples and 390 GPa for samples annealed in nitrogen atmosphere. PECVD low stress silicon nitride elastic modulus is estimated to be 88 GPa as deposited and 320 GPa after nitrogen annealing.

Model for Transport and Luminescence in Porous Silicon

NASA Astrophysics Data System (ADS)

John, George C.; Singh, Vijay A.

1996-03-01

A unified model for explaining the transport and luminescence properties of porous silicon has remained elusive(G.C.John and V.A.Singh, Phys. Rep. (in press)). The conductivity of porous silicon has been reported to increase exponentially with temperature(J.J.Mares et al.), Appl. Phys. Lett. 63, 180 (1993). We report additional observations of such instances. This Berthelot type behavior is ascribed to tunneling of carriers across a vibrating barrier. We hypothesize that the non-radiative recombination in porous silicon is governed by a similar mechanism. Based on this assumption, we show that the temperature and pressure dependence of luminescence in porous silicon can be convincingly explained. We present a unified phenomenological model which can account for a range of observations in porous silicon.

Adjustable Lid Aids Silicon-Ribbon Growth

NASA Technical Reports Server (NTRS)

Mchugh, J. P.; Steidensticker, R. G.; Duncan, C. S.

1985-01-01

Closely-spaced crucible cover speeds up solidification. Growth rate of dendritic-web silicon ribbon from molten silicon increased by controlling distance between crucible susceptor lid and liquid/solid interface. Lid held in relatively high position when crucible newly filled with chunks of polycrystalline silicon. As silicon melts and forms pool of liquid at lower level, lid gradually lowered.

Preventing Freezeup in Silicon Ribbon Growth

NASA Technical Reports Server (NTRS)

Mackintosh, B.

1983-01-01

Carefully-shaped heat conductor helps control thermal gradients crucial to growth of single-crystal silicon sheets for solar cells. Ends of die through which silicon sheet is drawn as ribbon from molten silicon. Profiled heat extractor prevents ribbon ends from solidifying prematurely and breaking.

Silicon Micromachined Microlens Array for THz Antennas

NASA Technical Reports Server (NTRS)

Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

2013-01-01

5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a smooth curvature. The measured height of the silicon microlens is about 280 microns. In this case, the original height of the photoresist was 210 microns. The change was due to the etching selectivity of 1.33 between photoresist and silicon. The measured surface roughness of the silicon microlens shows the peak-to-peak surface roughness of less than 0.5 microns, which is adequate in THz frequency. For example, the surface roughness should be less than 7 microns at 600 GHz range. The SEM (scanning electron microscope) image of the microlens confirms the smooth surface. The beam pattern at 550 GHz shows good directivity.

Creep analysis of silicone for podiatry applications.

PubMed

Janeiro-Arocas, Julia; Tarrío-Saavedra, Javier; López-Beceiro, Jorge; Naya, Salvador; López-Canosa, Adrián; Heredia-García, Nicolás; Artiaga, Ramón

2016-10-01

This work shows an effective methodology to characterize the creep-recovery behavior of silicones before their application in podiatry. The aim is to characterize, model and compare the creep-recovery properties of different types of silicone used in podiatry orthotics. Creep-recovery phenomena of silicones used in podiatry orthotics is characterized by dynamic mechanical analysis (DMA). Silicones provided by Herbitas are compared by observing their viscoelastic properties by Functional Data Analysis (FDA) and nonlinear regression. The relationship between strain and time is modeled by fixed and mixed effects nonlinear regression to compare easily and intuitively podiatry silicones. Functional ANOVA and Kohlrausch-Willians-Watts (KWW) model with fixed and mixed effects allows us to compare different silicones observing the values of fitting parameters and their physical meaning. The differences between silicones are related to the variations of breadth of creep-recovery time distribution and instantaneous deformation-permanent strain. Nevertheless, the mean creep-relaxation time is the same for all the studied silicones. Silicones used in palliative orthoses have higher instantaneous deformation-permanent strain and narrower creep-recovery distribution. The proposed methodology based on DMA, FDA and nonlinear regression is an useful tool to characterize and choose the proper silicone for each podiatry application according to their viscoelastic properties. Copyright © 2016 Elsevier Ltd. All rights reserved.

Custom 3D Printable Silicones with Tunable Stiffness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Durban, Matthew M.; Lenhardt, Jeremy M.; Wu, Amanda S.

Silicone elastomers have broad versatility within a variety of potential advanced materials applications, such as soft robotics, biomedical devices, and metamaterials. Furthermore, a series of custom 3D printable silicone inks with tunable stiffness is developed, formulated, and characterized. The silicone inks exhibit excellent rheological behavior for 3D printing, as observed from the printing of porous structures with controlled architectures. Here, the capability to tune the stiffness of printable silicone materials via careful control over the chemistry, network formation, and crosslink density of the ink formulations in order to overcome the challenging interplay between ink development, post-processing, material properties, and performancemore » is demonstrated.« less

Custom 3D Printable Silicones with Tunable Stiffness

DOE PAGES

Durban, Matthew M.; Lenhardt, Jeremy M.; Wu, Amanda S.; ...

2017-12-06

Silicone elastomers have broad versatility within a variety of potential advanced materials applications, such as soft robotics, biomedical devices, and metamaterials. Furthermore, a series of custom 3D printable silicone inks with tunable stiffness is developed, formulated, and characterized. The silicone inks exhibit excellent rheological behavior for 3D printing, as observed from the printing of porous structures with controlled architectures. Here, the capability to tune the stiffness of printable silicone materials via careful control over the chemistry, network formation, and crosslink density of the ink formulations in order to overcome the challenging interplay between ink development, post-processing, material properties, and performancemore » is demonstrated.« less

Phase-field model for the two-phase lithiation of silicon

NASA Astrophysics Data System (ADS)

Gao, Fangliang; Hong, Wei

2016-09-01

As an ideal anode material, silicon has the highest lithium-ion capacity in theory, but the broader application is limited by the huge volumetric strain caused by lithium insertion and extraction. To better understand the physical process and to resolve the related reliability issue, enormous efforts have been made. Recent experiments observed sharp reaction fronts in both crystalline and amorphous silicon during the first lithiation half-cycle. Such a concentration profile indicates that the process is likely to be reaction limited. Based on this postulation, a phase-field model is developed and implemented into a finite-element code to simulate the coupled large inelastic deformation and motion of the reaction front in a silicon electrode. In contrast to most existing models, the model treats both volumetric and deviatoric inelastic deformation in silicon as a direct consequence of the lithiation at the reaction front. The amount of deviatoric deformation is determined by using the recently developed kinetic model of stress-induced anisotropic reaction. By considering the role of stress in the lithiation process, this model successfully recovers the self-limiting phenomenon of silicon electrodes, and relates it to the local geometry of electrodes. The model is also used to evaluate the energy-release rate of the surface crack on a spherical electrode, and the result suggests a critical size of silicon nanoparticles to avert fracture. As examples, the morphology evolution of a silicon disk and a Si nanowire during lithiation are also investigated.

What controls silicon isotope fractionation during dissolution of diatom opal?

NASA Astrophysics Data System (ADS)

Wetzel, F.; de Souza, G. F.; Reynolds, B. C.

2014-04-01

The silicon isotope composition of opal frustules from photosynthesising diatoms is a promising tool for studying past changes in the marine silicon cycle, and indirectly that of carbon. Dissolution of this opal may be accompanied by silicon isotope fractionation that could disturb the pristine silicon isotope composition of diatom opal acquired in the surface ocean. It has previously been shown that dissolution of fresh and sediment trap diatom opal in seawater does fractionate silicon isotopes. However, as the mechanism of silicon isotope fractionation remained elusive, it is uncertain whether opal dissolution in general is associated with silicon isotope fractionation considering that opal chemistry and surface properties are spatially and temporally (i.e. opal of different age) diverse. In this study we dissolved sediment core diatom opal in 5 mM NaOH and found that this process is not associated with significant silicon isotope fractionation. Since no variability of the isotope effect was observed over a wide range of dissolution rates, we can rule out the suggestion that back-reactions had a significant influence on the net isotope effect. Similarly, we did not observe an impact of temperature, specific surface area, or degree of undersaturation on silicon isotope partitioning during dissolution, such that these can most likely also be ruled out as controlling factors. We discuss the potential impacts of the chemical composition of the dissolution medium and age of diatom opal on silicon isotope fractionation during dissolution. It appears most likely that the controlling mechanism of silicon isotope fractionation during dissolution is related to the reactivity, or potentially, aluminium content of the opal. Such a dependency would imply that silicon isotope fractionation during dissolution of diatom opal is spatially and temporally variable. However, since the isotope effects during dissolution are small, the silicon isotope composition of diatom opal appears to be robust against dissolution in the deep sea sedimentary environment.

Controlling temperature dependence of silicon waveguide using slot structure.

PubMed

Lee, Jong-Moo; Kim, Duk-Jun; Kim, Gwan-Ha; Kwon, O-Kyun; Kim, Kap-Joong; Kim, Gyungock

2008-02-04

We show that the temperature dependence of a silicon waveguide can be controlled well by using a slot waveguide structure filled with a polymer material. Without a slot, the amount of temperature-dependent wavelength shift for TE mode of a silicon waveguide ring resonator is very slightly reduced from 77 pm/ degrees C to 66 pm/ degrees C by using a polymer (WIR30-490) upper cladding instead of air upper cladding. With a slot filled with the same polymer, however, the reduction of the temperature dependence is improved by a pronounced amount and can be controlled down to -2 pm/ degrees C by adjusting several variables of the slot structure, such as the width of the slot between the pair of silicon wires, the width of the silicon wire pair, and the height of the silicon slab in our experiment. This measurement proves that a reduction in temperature dependence can be improved about 8 times more by using the slot structure.

Retinal Layers Measurements following Silicone Oil Tamponade for Retinal Detachment Surgery.

PubMed

Jurišić, Darija; Geber, Mia Zorić; Ćavar, Ivan; Utrobičić, Dobrila Karlica

2017-12-19

This study aimed to investigate the influence of silicone oil on the retinal nerve fiber layer (RNFL) thickness in patients with primary rhegmatogenous retinal detachment who underwent vitreoretinal surgery. The study included 47 patients (eyes), who underwent a pars plana vitrectomy with the silicone oil tamponade. The control group included unoperated eye of all participants. Spectral-domain optical coherence tomography (SD-OCT) was used for the measurements of peripapilar and macular RNFL thickness. The average peripapillary RNFL thickness was significantly higher in the silicone oil filled eyes during endotamponade and after its removal. The eyes with elevated IOP had less thickening of the RNFL in comparison to the eyes with normal IOP. Central macular thickness and macular volume were decreased in the silicone oil filled eyes in comparison to the control eyes. In conclusion, silicone oil caused peripapilar RNFL thickening in the vitrectomized eyes during endotamponade and after silicone oil removal.

Qualitative-Modeling-Based Silicon Neurons and Their Networks

PubMed Central

Kohno, Takashi; Sekikawa, Munehisa; Li, Jing; Nanami, Takuya; Aihara, Kazuyuki

2016-01-01

The ionic conductance models of neuronal cells can finely reproduce a wide variety of complex neuronal activities. However, the complexity of these models has prompted the development of qualitative neuron models. They are described by differential equations with a reduced number of variables and their low-dimensional polynomials, which retain the core mathematical structures. Such simple models form the foundation of a bottom-up approach in computational and theoretical neuroscience. We proposed a qualitative-modeling-based approach for designing silicon neuron circuits, in which the mathematical structures in the polynomial-based qualitative models are reproduced by differential equations with silicon-native expressions. This approach can realize low-power-consuming circuits that can be configured to realize various classes of neuronal cells. In this article, our qualitative-modeling-based silicon neuron circuits for analog and digital implementations are quickly reviewed. One of our CMOS analog silicon neuron circuits can realize a variety of neuronal activities with a power consumption less than 72 nW. The square-wave bursting mode of this circuit is explained. Another circuit can realize Class I and II neuronal activities with about 3 nW. Our digital silicon neuron circuit can also realize these classes. An auto-associative memory realized on an all-to-all connected network of these silicon neurons is also reviewed, in which the neuron class plays important roles in its performance. PMID:27378842

A cross-circulated bicephalic model of head transplantation.

PubMed

Li, Peng-Wei; Zhao, Xin; Zhao, Yun-Long; Wang, Bing-Jian; Song, Yang; Shen, Zi-Long; Jiang, Hong-Jun; Jin, Hai; Canavero, Sergio; Ren, Xiao-Ping

2017-06-01

A successful cephalosomatic anastomosis ("head transplant") requires, among others, the ability to control long-term immune rejection and avoidance of ischemic events during the head transference phase. We developed a bicephalic model of head transplantation to study these aspects. The thoracic aorta and superior vena cava of a donor rat were anastomosed with the carotid artery and extracorporeal veins of a recipient rat by vascular grafts. Before thoracotomy in the donor rat, the axillary artery and vein of the donor were connected to the carotid and the extracranial vein of the third rat through a silicone tube. The silicone tube was passed through a peristaltic pump to ensure donor brain tissue blood supply. There is no ischemia reperfusion injury in donor brain tissue analyzed by electroencephalogram. Postoperative donor has pain reflex and corneal reflex. Peristaltic pump application can guarantee the blood supply of donor brain tissue per unit time, while the application of temperature change device to the silicone tube can protect the brain tissue hypothermia, postoperative experimental data show that there is no brain tissue ischemia during the whole operation. The application of vascular grafting can also provide the possibility of long-term survival of the model. © 2017 John Wiley & Sons Ltd.

Kinetic Modeling of a Silicon Refining Process in a Moist Hydrogen Atmosphere

NASA Astrophysics Data System (ADS)

Chen, Zhiyuan; Morita, Kazuki

2018-03-01

We developed a kinetic model that considers both silicon loss and boron removal in a metallurgical grade silicon refining process. This model was based on the hypotheses of reversible reactions. The reaction rate coefficient kept the same form but error of terminal boron concentration could be introduced when relating irreversible reactions. Experimental data from published studies were used to develop a model that fit the existing data. At 1500 °C, our kinetic analysis suggested that refining silicon in a moist hydrogen atmosphere generates several primary volatile species, including SiO, SiH, HBO, and HBO2. Using the experimental data and the kinetic analysis of volatile species, we developed a model that predicts a linear relationship between the reaction rate coefficient k and both the quadratic function of p(H2O) and the square root of p(H2). Moreover, the model predicted the partial pressure values for the predominant volatile species and the prediction was confirmed by the thermodynamic calculations, indicating the reliability of the model. We believe this model provides a foundation for designing a silicon refining process with a fast boron removal rate and low silicon loss.

Kinetic Modeling of a Silicon Refining Process in a Moist Hydrogen Atmosphere

NASA Astrophysics Data System (ADS)

Chen, Zhiyuan; Morita, Kazuki

2018-06-01

We developed a kinetic model that considers both silicon loss and boron removal in a metallurgical grade silicon refining process. This model was based on the hypotheses of reversible reactions. The reaction rate coefficient kept the same form but error of terminal boron concentration could be introduced when relating irreversible reactions. Experimental data from published studies were used to develop a model that fit the existing data. At 1500 °C, our kinetic analysis suggested that refining silicon in a moist hydrogen atmosphere generates several primary volatile species, including SiO, SiH, HBO, and HBO2. Using the experimental data and the kinetic analysis of volatile species, we developed a model that predicts a linear relationship between the reaction rate coefficient k and both the quadratic function of p(H2O) and the square root of p(H2). Moreover, the model predicted the partial pressure values for the predominant volatile species and the prediction was confirmed by the thermodynamic calculations, indicating the reliability of the model. We believe this model provides a foundation for designing a silicon refining process with a fast boron removal rate and low silicon loss.

Biotin-Streptavidin Binding Interactions of Dielectric Filled Silicon Bulk Acoustic Resonators for Smart Label-Free Biochemical Sensor Applications

PubMed Central

Heidari, Amir; Yoon, Yong-Jin; Park, Woo-Tae; Su, Pei-Chen; Miao, Jianmin; Lin, Julius Tsai Ming; Park, Mi Kyoung

2014-01-01

Sensor performance of a dielectric filled silicon bulk acoustic resonator type label-free biosensor is verified with biotin-streptavidin binding interactions as a model system. The mass sensor is a micromachined silicon square plate with a dielectric filled capacitive excitation mechanism. The resonance frequency of the biotin modified resonator decreased 315 ppm when exposed to streptavidin solution for 15 min with a concentration of 10−7 M, corresponding to an added mass of 3.43 ng on the resonator surface. An additional control is added by exposing a bovine serum albumin (BSA)-covered device to streptavidin in the absence of the attached biotin. No resonance frequency shift was observed in the control experiment, which confirms the specificity of the detection. The sensor-to-sensor variability is also measured to be 4.3%. Consequently, the developed sensor can be used to observe in biotin-streptavidin interaction without the use of labelling or molecular tags. In addition, biosensor can be used in a variety of different immunoassay tests. PMID:24608003

Microfabricated 1-3 composite acoustic matching layers for 15 MHz transducers.

PubMed

Manh, Tung; Jensen, Geir Uri; Johansen, Tonni F; Hoff, Lars

2013-08-01

Medical ultrasound transducers require matching layers to couple energy from the piezoelectric ceramic into the tissue. Composites of type 0-3 are often used to obtain the desired acoustic impedances, but they introduce challenges at high frequencies, i.e. non-uniformity, attenuation, and dispersion. This paper presents novel acoustic matching layers made as silicon-polymer 1-3 composites, fabricated by deep reactive ion etch (DRIE). This fabrication method is well-established for high-volume production in the microtechnology industry. First estimates for the acoustic properties were found from the iso-strain theory, while the Finite Element Method (FEM) was employed for more accurate modeling. The composites were used as single matching layers in 15 MHz ultrasound transducers. Acoustic properties of the composite were estimated by fitting the electrical impedance measurements to the Mason model. Five composites were fabricated. All had period 16 μm, while the silicon width was varied to cover silicon volume fractions between 0.17 and 0.28. Silicon-on-Insulator (SOI) wafers were used to get a controlled etch stop against the buried oxide layer at a defined depth, resulting in composites with thickness 83 μm. A slight tapering of the silicon side walls was observed; their widths were 0.9 μm smaller at the bottom than at the top, corresponding to a tapering angle of 0.3°. Acoustic parameters estimated from electrical impedance measurements were lower than predicted from the iso-strain model, but fitted within 5% to FEM simulations. The deviation was explained by dispersion caused by the finite dimensions of the composite and by the tapered walls. Pulse-echo measurements on a transducer with silicon volume fraction 0.17 showed a two-way -6 dB relative bandwidth of 50%. The pulse-echo measurements agreed with predictions from the Mason model when using material parameter values estimated from electrical impedance measurements. The results show the feasibility of the fabrication method and the theoretical description. A next step would be to include these composites as one of several layers in an acoustic matching layer stack. Copyright © 2013 Elsevier B.V. All rights reserved.

Semiconductor technology program: Progress briefs

NASA Technical Reports Server (NTRS)

Galloway, K. F.; Scace, R. I.; Walters, E. J.

1981-01-01

Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

Development of a model and computer code to describe solar grade silicon production processes

NASA Technical Reports Server (NTRS)

Srivastava, R.; Gould, R. K.

1979-01-01

Mathematical models, and computer codes based on these models were developed which allow prediction of the product distribution in chemical reactors in which gaseous silicon compounds are converted to condensed phase silicon. The reactors to be modeled are flow reactors in which silane or one of the halogenated silanes is thermally decomposed or reacted with an alkali metal, H2 or H atoms. Because the product of interest is particulate silicon, processes which must be modeled, in addition to mixing and reaction of gas-phase reactants, include the nucleation and growth of condensed Si via coagulation, condensation, and heterogeneous reaction.

Controlling the Nanoscale Patterning of AuNPs on Silicon Surfaces

PubMed Central

Williams, Sophie E.; Davies, Philip R.; Bowen, Jenna L.; Allender, Chris J.

2013-01-01

This study evaluates the effectiveness of vapour-phase deposition for creating sub-monolayer coverage of aminopropyl triethoxysilane (APTES) on silicon in order to exert control over subsequent gold nanoparticle deposition. Surface coverage was evaluated indirectly by observing the extent to which gold nanoparticles (AuNPs) deposited onto the modified silicon surface. By varying the distance of the silicon wafer from the APTES source and concentration of APTES in the evaporating media, control over subsequent gold nanoparticle deposition was achievable to an extent. Fine control over AuNP deposition (AuNPs/μm2) however, was best achieved by adjusting the ionic concentration of the AuNP-depositing solution. Furthermore it was demonstrated that although APTES was fully removed from the silicon surface following four hours incubation in water, the gold nanoparticle-amino surface complex was stable under the same conditions. Atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) were used to study these affects. PMID:28348330

A silicon central pattern generator controls locomotion in vivo.

PubMed

Vogelstein, R J; Tenore, F; Guevremont, L; Etienne-Cummings, R; Mushahwar, V K

2008-09-01

We present a neuromorphic silicon chip that emulates the activity of the biological spinal central pattern generator (CPG) and creates locomotor patterns to support walking. The chip implements ten integrate-and-fire silicon neurons and 190 programmable digital-to-analog converters that act as synapses. This architecture allows for each neuron to make synaptic connections to any of the other neurons as well as to any of eight external input signals and one tonic bias input. The chip's functionality is confirmed by a series of experiments in which it controls the motor output of a paralyzed animal in real-time and enables it to walk along a three-meter platform. The walking is controlled under closed-loop conditions with the aide of sensory feedback that is recorded from the animal's legs and fed into the silicon CPG. Although we and others have previously described biomimetic silicon locomotor control systems for robots, this is the first demonstration of a neuromorphic device that can replace some functions of the central nervous system in vivo.

Engineering functionalized multi-phased silicon/silicon oxide nano-biomaterials to passivate the aggressive proliferation of cancer

PubMed Central

Premnath, P.; Tan, B.; Venkatakrishnan, K.

2015-01-01

Currently, the use of nano silicon in cancer therapy is limited as drug delivery vehicles and markers in imaging, not as manipulative/controlling agents. This is due to limited properties that native states of nano silicon and silicon oxides offers. We introduce nano-functionalized multi-phased silicon/silicon oxide biomaterials synthesized via ultrashort pulsed laser synthesis, with tunable properties that possess inherent cancer controlling properties that can passivate the progression of cancer. This nanostructured biomaterial is composed of individual functionalized nanoparticles made of a homogenous hybrid of multiple phases of silicon and silicon oxide in increasing concentration outwards from the core. The chemical properties of the proposed nanostructure such as number of phases, composition of phases and crystal orientation of each functionalized nanoparticle in the three dimensional nanostructure is defined based on precisely tuned ultrashort pulsed laser-material interaction mechanisms. The amorphous rich phased biomaterial shows a 30 fold (95%) reduction in number of cancer cells compared to bulk silicon in 48 hours. Further, the size of the cancer cells reduces by 76% from 24 to 48 hours. This method exposes untapped properties of combination of multiple phases of silicon oxides and its applications in cancer therapy. PMID:26190009

[Study on the effect of different impression methods on the marginal fit of all-ceramic crowns].

PubMed

Zhan, Lilin; Zeng, Liwei; Chen, Ping; Liao, Lan; Li, Shiyue; Liu, Renying

2015-08-01

To investigate the effect of three different impression methods on the marginal fit of all-ceramic crowns. The three methods include scanning silicone rubber impression, cast models, and direct optical impression. The polymethyl methacrylate (PMMA) material of a mandibular first molar in standard model was prepared with 16 models duplicated. The all-ceramic crowns were prepared using three different impression methods. Accurate impressions were made using silicone rubber, and the cast models were obtained. The PMMA models, silicone rubber impressions, and cast models were scanned, and digital models of three groups were obtained to produce 48 zirconia all-ceramic crowns with computer aided design/computer aided manufacture. The marginal fit of these groups was measured by silicone rubber gap impression. Statistical analysis was performed with SPSS 17.0 software. The marginal fit of direct optical impression groups, silicone rubber impression groups, cast model groups was (69.18±9.47), (81.04±10.88), (84.42±9.96) µm. A significant difference was observed in the marginal fit of the direct optical impression groups and the other groups (P<0.05). No statistically significant difference was observed in the marginal fit of the silicone rubber impression groups and the cast model groups (P>0.05). All marginal measurement sites are clinically acceptable by the three different impression scanning methods. The silicone rubber impression scanning method can be used for all-ceramic restorations.

Printable nanostructured silicon solar cells for high-performance, large-area flexible photovoltaics.

PubMed

Lee, Sung-Min; Biswas, Roshni; Li, Weigu; Kang, Dongseok; Chan, Lesley; Yoon, Jongseung

2014-10-28

Nanostructured forms of crystalline silicon represent an attractive materials building block for photovoltaics due to their potential benefits to significantly reduce the consumption of active materials, relax the requirement of materials purity for high performance, and hence achieve greatly improved levelized cost of energy. Despite successful demonstrations for their concepts over the past decade, however, the practical application of nanostructured silicon solar cells for large-scale implementation has been hampered by many existing challenges associated with the consumption of the entire wafer or expensive source materials, difficulties to precisely control materials properties and doping characteristics, or restrictions on substrate materials and scalability. Here we present a highly integrable materials platform of nanostructured silicon solar cells that can overcome these limitations. Ultrathin silicon solar microcells integrated with engineered photonic nanostructures are fabricated directly from wafer-based source materials in configurations that can lower the materials cost and can be compatible with deterministic assembly procedures to allow programmable, large-scale distribution, unlimited choices of module substrates, as well as lightweight, mechanically compliant constructions. Systematic studies on optical and electrical properties, photovoltaic performance in experiments, as well as numerical modeling elucidate important design rules for nanoscale photon management with ultrathin, nanostructured silicon solar cells and their interconnected, mechanically flexible modules, where we demonstrate 12.4% solar-to-electric energy conversion efficiency for printed ultrathin (∼ 8 μm) nanostructured silicon solar cells when configured with near-optimal designs of rear-surface nanoposts, antireflection coating, and back-surface reflector.

Study of thickness and uniformity of oxide passivation with DI-O3 on silicon substrate for electronic and photonic applications

NASA Astrophysics Data System (ADS)

Sharma, Mamta; Hazra, Purnima; Singh, Satyendra Kumar

2018-05-01

Since the beginning of semiconductor fabrication technology evolution, clean and passivated substrate surface is one of the prime requirements for fabrication of Electronic and optoelectronic device fabrication. However, as the scale of silicon circuits and device architectures are continuously decreased from micrometer to nanometer (from VLSI to ULSI technology), the cleaning methods to achieve better wafer surface qualities has raised research interests. The development of controlled and uniform silicon dioxide is the most effective and reliable way to achieve better wafer surface quality for fabrication of electronic devices. On the other hand, in order to meet the requirement of high environment safety/regulatory standards, the innovation of cleaning technology is also in demand. The controlled silicon dioxide layer formed by oxidant de-ionized ozonated water has better uniformity. As the uniformity of the controlled silicon dioxide layer is improved on the substrate, it enhances the performance of the devices. We can increase the thickness of oxide layer, by increasing the ozone time treatment. We reported first time to measurement of thickness of controlled silicon dioxide layer and obtained the uniform layer for same ozone time.

Numerical Simulation Of Silicon-Ribbon Growth

NASA Technical Reports Server (NTRS)

Woda, Ben K.; Kuo, Chin-Po; Utku, Senol; Ray, Sujit Kumar

1987-01-01

Mathematical model includes nonlinear effects. In development simulates growth of silicon ribbon from melt. Takes account of entire temperature and stress history of ribbon. Numerical simulations performed with new model helps in search for temperature distribution, pulling speed, and other conditions favoring growth of wide, flat, relatively defect-free silicon ribbons for solar photovoltaic cells at economically attractive, high production rates. Also applicable to materials other than silicon.

Understanding and controlling the step bunching instability in aqueous silicon etching

NASA Astrophysics Data System (ADS)

Bao, Hailing

Chemical etching of silicon has been widely used for more than half a century in the semiconductor industry. It not only forms the basis for current wafer cleaning processes, it also serves as a powerful tool to create a variety of surface morphologies for different applications. Its potential for controlling surface morphology at the atomic scale over micron-size regions is especially appealing. In spite of its wide usage, the chemistry of silicon etching is poorly understood. Many seemingly simple but fundamental questions have not been answered. As a result, the development of new etchants and new etching protocols are based on expensive and tedious trial-and-error experiments. A better understanding of the etching mechanism would direct the rational formulation of new etchants that produce controlled etch morphologies. Particularly, micron-scale step bunches spontaneously develop on the vicinal Si(111) surface etched in KOH or other anisotropic aqueous etchants. The ability to control the size, orientation, density and regularity of these surface features would greatly improve the performance of microelectromechanical devices. This study is directed towards understanding the chemistry and step bunching instability in aqueous anisotropic etching of silicon through a combination of experimental techniques and theoretical simulations. To reveal the cause of step-bunching instability, kinetic Monte Carlo simulations were constructed based on an atomistic model of the silicon lattice and a modified kinematic wave theory. The simulations showed that inhomogeneity was the origin of step-bunching, which was confirmed through STM studies of etch morphologies created under controlled flow conditions. To quantify the size of the inhomogeneities in different etchants and to clarify their effects, a five-parallel-trench pattern was fabricated. This pattern used a nitride mask to protect most regions of the wafer; five evenly spaced etch windows were opened to the Si(110) substrate. Combining data from these etched patterns and surface IR spectra, a modified mechanism, which explained most experimental observations, was proposed. Control of the step-bunching instability was accomplished with a second micromachined etch barrier pattern which consisted of a circular array of seventy-two long, narrow trenches in an etch mask. Using this pattern, well aligned, regularly shaped, evenly-distributed, near-atomically flat terraces in micron size were produced controllably.

Compounds from silicones alter enzyme activity in curing barnacle glue and model enzymes.

PubMed

Rittschof, Daniel; Orihuela, Beatriz; Harder, Tilmann; Stafslien, Shane; Chisholm, Bret; Dickinson, Gary H

2011-02-17

Attachment strength of fouling organisms on silicone coatings is low. We hypothesized that low attachment strength on silicones is, in part, due to the interaction of surface available components with natural glues. Components could alter curing of glues through bulk changes or specifically through altered enzyme activity. GC-MS analysis of silicone coatings showed surface-available siloxanes when the coatings were gently rubbed with a cotton swab for 15 seconds or given a 30 second rinse with methanol. Mixtures of compounds were found on 2 commercial and 8 model silicone coatings. The hypothesis that silicone components alter glue curing enzymes was tested with curing barnacle glue and with commercial enzymes. In our model, barnacle glue curing involves trypsin-like serine protease(s), which activate enzymes and structural proteins, and a transglutaminase which cross-links glue proteins. Transglutaminase activity was significantly altered upon exposure of curing glue from individual barnacles to silicone eluates. Activity of purified trypsin and, to a greater extent, transglutaminase was significantly altered by relevant concentrations of silicone polymer constituents. Surface-associated silicone compounds can disrupt glue curing and alter enzyme properties. Altered curing of natural glues has potential in fouling management.

Compounds from Silicones Alter Enzyme Activity in Curing Barnacle Glue and Model Enzymes

PubMed Central

Rittschof, Daniel; Orihuela, Beatriz; Harder, Tilmann; Stafslien, Shane; Chisholm, Bret; Dickinson, Gary H.

2011-01-01

Background Attachment strength of fouling organisms on silicone coatings is low. We hypothesized that low attachment strength on silicones is, in part, due to the interaction of surface available components with natural glues. Components could alter curing of glues through bulk changes or specifically through altered enzyme activity. Methodology/Principal Findings GC-MS analysis of silicone coatings showed surface-available siloxanes when the coatings were gently rubbed with a cotton swab for 15 seconds or given a 30 second rinse with methanol. Mixtures of compounds were found on 2 commercial and 8 model silicone coatings. The hypothesis that silicone components alter glue curing enzymes was tested with curing barnacle glue and with commercial enzymes. In our model, barnacle glue curing involves trypsin-like serine protease(s), which activate enzymes and structural proteins, and a transglutaminase which cross-links glue proteins. Transglutaminase activity was significantly altered upon exposure of curing glue from individual barnacles to silicone eluates. Activity of purified trypsin and, to a greater extent, transglutaminase was significantly altered by relevant concentrations of silicone polymer constituents. Conclusions/Significance Surface-associated silicone compounds can disrupt glue curing and alter enzyme properties. Altered curing of natural glues has potential in fouling management. PMID:21379573

Pressure garment therapy alone and in combination with silicone for the prevention of hypertrophic scarring: randomized controlled trial with intraindividual comparison.

PubMed

Steinstraesser, Lars; Flak, Ewa; Witte, Bernd; Ring, Andrej; Tilkorn, Daniel; Hauser, Jörg; Langer, Stefan; Steinau, Hans-Ulrich; Al-Benna, Sammy

2011-10-01

Published trials evaluating pressure garment and/or silicone therapy as a treatment for hypertrophic burn scarring are of poor quality and highly susceptible to bias. The authors' aim was to compare the efficacy of pressure garment therapy alone and in combination with silicone gel sheet or spray therapy for the prevention of hypertrophic scarring. The authors conducted an open, single-center, randomized controlled study with intraindividual comparison of study preparations and control to standard treatment. Forty-three consecutive patients with two comparable areas of split-thickness graft burn wounds were recruited into the study, and 38 patients were followed up for 18 months. All patients received compression garments and were randomized to one of two treatment groups: (1) self-drying silicone spray and compression versus compression alone and (2) silicone sheeting and compression versus compression alone. Clinical assessment, measurement of scar redness, height, and photographic documentation of each treated area were performed at different visits over an 18-month follow-up period. Significance was tested using repeated-measures analyses and Wilcoxon paired-sample signed rank tests. Use of pressure garment therapy alone produced results equivalent to those of combined silicone and pressure garment therapy in the prevention of hypertrophic scars. The efficacy of silicone spray therapy was comparable to that of silicone gel sheet therapy in the prevention of hypertrophic scars. Patients treated with silicone spray had fewer side effects when compared with the silicone sheet group. Multimodal therapy with silicone and pressure garment therapy failed to prevent hypertrophic scars beyond that observed with pressure garment therapy alone. Therapeutic, II.

Custom 3D Printable Silicones with Tunable Stiffness.

PubMed

Durban, Matthew M; Lenhardt, Jeremy M; Wu, Amanda S; Small, Ward; Bryson, Taylor M; Perez-Perez, Lemuel; Nguyen, Du T; Gammon, Stuart; Smay, James E; Duoss, Eric B; Lewicki, James P; Wilson, Thomas S

2018-02-01

Silicone elastomers have broad versatility within a variety of potential advanced materials applications, such as soft robotics, biomedical devices, and metamaterials. A series of custom 3D printable silicone inks with tunable stiffness is developed, formulated, and characterized. The silicone inks exhibit excellent rheological behavior for 3D printing, as observed from the printing of porous structures with controlled architectures. Herein, the capability to tune the stiffness of printable silicone materials via careful control over the chemistry, network formation, and crosslink density of the ink formulations in order to overcome the challenging interplay between ink development, post-processing, material properties, and performance is demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Modeling the high-frequency complex modulus of silicone rubber using standing Lamb waves and an inverse finite element method.

PubMed

Jonsson, Ulf; Lindahl, Olof; Andersson, Britt

2014-12-01

To gain an understanding of the high-frequency elastic properties of silicone rubber, a finite element model of a cylindrical piezoelectric element, in contact with a silicone rubber disk, was constructed. The frequency-dependent elastic modulus of the silicone rubber was modeled by a fourparameter fractional derivative viscoelastic model in the 100 to 250 kHz frequency range. The calculations were carried out in the range of the first radial resonance frequency of the sensor. At the resonance, the hyperelastic effect of the silicone rubber was modeled by a hyperelastic compensating function. The calculated response was matched to the measured response by using the transitional peaks in the impedance spectrum that originates from the switching of standing Lamb wave modes in the silicone rubber. To validate the results, the impedance responses of three 5-mm-thick silicone rubber disks, with different radial lengths, were measured. The calculated and measured transitional frequencies have been compared in detail. The comparison showed very good agreement, with average relative differences of 0.7%, 0.6%, and 0.7% for the silicone rubber samples with radial lengths of 38.0, 21.4, and 11.0 mm, respectively. The average complex elastic moduli of the samples were (0.97 + 0.009i) GPa at 100 kHz and (0.97 + 0.005i) GPa at 250 kHz.

Laser Doppler imaging of cutaneous blood flow through transparent face masks: a necessary preamble to computer-controlled rapid prototyping fabrication with submillimeter precision.

PubMed

Allely, Rebekah R; Van-Buendia, Lan B; Jeng, James C; White, Patricia; Wu, Jingshu; Niszczak, Jonathan; Jordan, Marion H

2008-01-01

A paradigm shift in management of postburn facial scarring is lurking "just beneath the waves" with the widespread availability of two recent technologies: precise three-dimensional scanning/digitizing of complex surfaces and computer-controlled rapid prototyping three-dimensional "printers". Laser Doppler imaging may be the sensible method to track the scar hyperemia that should form the basis of assessing progress and directing incremental changes in the digitized topographical face mask "prescription". The purpose of this study was to establish feasibility of detecting perfusion through transparent face masks using the Laser Doppler Imaging scanner. Laser Doppler images of perfusion were obtained at multiple facial regions on five uninjured staff members. Images were obtained without a mask, followed by images with a loose fitting mask with and without a silicone liner, and then with a tight fitting mask with and without a silicone liner. Right and left oblique images, in addition to the frontal images, were used to overcome unobtainable measurements at the extremes of face mask curvature. General linear model, mixed model, and t tests were used for data analysis. Three hundred seventy-five measurements were used for analysis, with a mean perfusion unit of 299 and pixel validity of 97%. The effect of face mask pressure with and without the silicone liner was readily quantified with significant changes in mean cutaneous blood flow (P < .5). High valid pixel rate laser Doppler imager flow data can be obtained through transparent face masks. Perfusion decreases with the application of pressure and with silicone. Every participant measured differently in perfusion units; however, consistent perfusion patterns in the face were observed.

Site-Controlled Growth of Monolithic InGaAs/InP Quantum Well Nanopillar Lasers on Silicon.

PubMed

Schuster, Fabian; Kapraun, Jonas; Malheiros-Silveira, Gilliard N; Deshpande, Saniya; Chang-Hasnain, Connie J

2017-04-12

In this Letter, we report the site-controlled growth of InP nanolasers on a silicon substrate with patterned SiO 2 nanomasks by low-temperature metal-organic chemical vapor deposition, compatible with silicon complementary metal-oxide-semiconductor (CMOS) post-processing. A two-step growth procedure is presented to achieve smooth wurtzite faceting of vertical nanopillars. By incorporating InGaAs multiquantum wells, the nanopillar emission can be tuned over a wide spectral range. Enhanced quality factors of the intrinsic InP nanopillar cavities promote lasing at 0.87 and 1.21 μm, located within two important optical telecommunication bands. This is the first demonstration of a site-controlled III-V nanolaser monolithically integrated on silicon with a silicon-transparent emission wavelength, paving the way for energy-efficient on-chip optical links at typical telecommunication wavelengths.

Analysis of the geometrical-probabilistic models of electrocrystallization

NASA Astrophysics Data System (ADS)

Isaev, V. A.; Grishenkova, O. V.; Zaykov, Yu. P.

2016-08-01

The formation of a three-dimensional electrode deposit under potentiostatic conditions, including the stages of nucleation, growth, and overlap of growing new-phase clusters and their diffusion zones, is considered. The models of electrochemical phase formation for kinetics- and diffusion-controlled growth are analyzed, and the correctness of the approximations used in these models is estimated. The possibility of application of these models to an analysis of the electrodeposition of silicon from molten salts is discussed.

The effect of montelukast and antiadhesion barrier solution on the capsule formation after insertion of silicone implants in a white rat model.

PubMed

Yang, J-D; Kwon, O-H; Lee, J-W; Chung, H-Y; Cho, B-C; Park, H-Y; Kim, T-G

2013-01-01

Capsular contracture is one of the most severe complications that can occur in breast surgery following silicone implant insertion. The purpose of this study was to investigate the effect of montelukast and antiadhesion barrier solution (AABS) on reducing capsular formation and their possible synergism. This study was approved by the Animal Ethics Committee (Reference No. KNU 2012-33) and was conducted in accordance with the Kyungpook National University - Institutional Animal Care and Use Committee, Animal Ethics Committee. The experiments in this study were conducted in vivo in 4 groups of 24 rats. Following silicone implant insertion, the pocket was injected with different agents. Group I (control group) was given normal saline injections into the pocket and fed with pure water. Group II was given injections of AABS and fed with pure water. Group III was given injections of normal saline and the medication montelukast during the experimental period. Group IV was given injections of AABS and montelukast as postoperative medication. Peri-implant capsules were excised after 8 weeks and were evaluated for transparency, inflammatory cell content, capsule thickness, collagen pattern and TGF-β expression. The capsules in the experimental groups (i.e., groups II-IV) were significantly more transparent than those in group I (controls; p < 0.05, Student's t test). The mean capsule thickness of the experimental groups II (296 ± 14.76 μm), III (280 ± 14.77 μm) and IV (276 ± 39.28 μm) was smaller than that of the control group I (361 ± 35.43 μm). Compared to the control group, the histologic findings in the experimental groups suggested a decreased inflammatory response occurring in the peri-implant capsules as they exhibited minor vascularization and a reduced number of mast cells and macrophages. The collagen patterns in the experimental groups were of a lower density than in the control group with the former showing a loose, tidy collagen pattern. The amounts of TGF-β and collagen I were higher in the control group than in the experimental groups. Group IV (the synergic effect group) had a more pronounced effect on all the parameters examined than that in groups II and III with separate drug administration. Montelukast and AABS reduced the thickness, the inflammatory cell infiltrate and the myofibroblast content of the peri-implant capsules around silicone implants in this white rat model. They lowered the expression of the fibrotic mediator, TGF-β, and inhibited the peri-implant capsular fibrosis. Therefore, montelukast and AABS are effective in the reduction of silicone-induced peri-implant capsular formation.

Characterization and modelling of the boron-oxygen defect activation in compensated n-type silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schön, J.; Niewelt, T.; Broisch, J.

2015-12-28

A study of the activation of the light-induced degradation in compensated n-type Czochralski grown silicon is presented. A kinetic model is established that verifies the existence of both the fast and the slow components known from p-type and proves the quadratic dependence of the defect generation rates of both defects on the hole concentration. The model allows for the description of lifetime degradation kinetics in compensated n-type silicon under various intensities and is in accordance with the findings for p-type silicon. We found that the final concentrations of the slow defect component in compensated n-type silicon only depend on themore » interstitial oxygen concentration and on neither the boron concentration nor the equilibrium electron concentration n{sub 0}. The final concentrations of the fast defect component slightly increase with increasing boron concentration. The results on n-type silicon give new insight to the origin of the BO defect and question the existing models for the defect composition.« less

Intermediate Bandgap Solar Cells From Nanostructured Silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Black, Marcie

2014-10-30

This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

Determination of traces of silicone defoamer in fruit juices by solvent extraction/atomic absorption spectroscopy.

PubMed

Gooch, E G

1993-01-01

Silicone defoamers are used to control foam during the processing of fruit juices. Residual silicones in fruit juices can be separated from the naturally occurring siliceous materials in fruit products and selectively recovered by solvent extraction, after suitable pretreatment. The recovered silicone is measured by atomic absorption spectroscopy. Silicone concentrations as low as about 1 ppm can be measured. The juices are accurately spiked for recovery studies by the addition of silicone dispersed in D-sorbitol.

Measurement of phase difference for micromachined gyros driven by rotating aircraft.

PubMed

Zhang, Zengping; Zhang, Fuxue; Zhang, Wei

2013-08-21

This paper presents an approach for realizing a phase difference measurement of a new gyro. A silicon micromachined gyro was mounted on rotating aircraft for aircraft attitude control. Aircraft spin drives the silicon pendulum of a gyro rotating at a high speed so that it can sense the transverse angular velocity of the rotating aircraft based on the gyroscopic precession principle when the aircraft has transverse rotation. In applications of the rotating aircraft single channel control system, such as damping in the attitude stabilization loop, the gyro signal must be kept in sync with the control signal. Therefore, the phase difference between both signals needs to be measured accurately. Considering that phase difference is mainly produced by both the micromachined part and the signal conditioning circuit, a mathematical model has been established and analyzed to determine the gyro's phase frequency characteristics. On the basis of theoretical analysis, a dynamic simulation has been done for a case where the spin frequency is 15 Hz. Experimental results with the proposed measurement method applied to a silicon micromachined gyro driven by a rotating aircraft demonstrate that it is effective in practical applications. Measured curve and numerical analysis of phase frequency characteristic are in accordance, and the error between measurement and simulation is only 5.3%.

Multiple testing of food contact materials: a predictive algorithm for assessing the global migration from silicone moulds.

PubMed

Elskens, Marc; Vloeberghs, Daniel; Van Elsen, Liesbeth; Baeyens, Willy; Goeyens, Leo

2012-09-15

For reasons of food safety, packaging and food contact materials must be submitted to migration tests. Testing of silicone moulds is often very laborious, since three replicate tests are required to decide about their compliancy. This paper presents a general modelling framework to predict the sample's compliance or non-compliance using results of the first two migration tests. It compares the outcomes of models with multiple continuous predictors with a class of models involving latent and dummy variables. The model's prediction ability was tested using cross and external validations, i.e. model revalidation each time a new measurement set became available. At the overall migration limit of 10 mg dm(-2), the relative uncertainty on a prediction was estimated to be ~10%. Taking the default values for α and β equal to 0.05, the maximum value that can be predicted for sample compliance was therefore 7 mg dm(-2). Beyond this limit the risk for false compliant results increases significantly, and a third migration test should be performed. The result of this latter test defines the sample's compliance or non-compliance. Propositions for compliancy control inspired by the current dioxin control strategy are discussed. Copyright © 2012 Elsevier B.V. All rights reserved.

Polyelectrolyte multilayer-assisted fabrication of non-periodic silicon nanocolumn substrates for cellular interface applications

NASA Astrophysics Data System (ADS)

Lee, Seyeong; Kim, Dongyoon; Kim, Seong-Min; Kim, Jeong-Ah; Kim, Taesoo; Kim, Dong-Yu; Yoon, Myung-Han

2015-08-01

Recent advances in nanostructure-based biotechnology have resulted in a growing demand for vertical nanostructure substrates with elaborate control over the nanoscale geometry and a high-throughput preparation. In this work, we report the fabrication of non-periodic vertical silicon nanocolumn substrates via polyelectrolyte multilayer-enabled randomized nanosphere lithography. Owing to layer-by-layer deposited polyelectrolyte adhesives, uniformly-separated polystyrene nanospheres were securely attached on large silicon substrates and utilized as masks for the subsequent metal-assisted silicon etching in solution. Consequently, non-periodic vertical silicon nanocolumn arrays were successfully fabricated on a wafer scale, while each nanocolumn geometric factor, such as the diameter, height, density, and spatial patterning, could be fully controlled in an independent manner. Finally, we demonstrate that our vertical silicon nanocolumn substrates support viable cell culture with minimal cell penetration and unhindered cell motility due to the blunt nanocolumn morphology. These results suggest that vertical silicon nanocolumn substrates may serve as a useful cellular interface platform for performing a statistically meaningful number of cellular experiments in the fields of biomolecular delivery, stem cell research, etc.Recent advances in nanostructure-based biotechnology have resulted in a growing demand for vertical nanostructure substrates with elaborate control over the nanoscale geometry and a high-throughput preparation. In this work, we report the fabrication of non-periodic vertical silicon nanocolumn substrates via polyelectrolyte multilayer-enabled randomized nanosphere lithography. Owing to layer-by-layer deposited polyelectrolyte adhesives, uniformly-separated polystyrene nanospheres were securely attached on large silicon substrates and utilized as masks for the subsequent metal-assisted silicon etching in solution. Consequently, non-periodic vertical silicon nanocolumn arrays were successfully fabricated on a wafer scale, while each nanocolumn geometric factor, such as the diameter, height, density, and spatial patterning, could be fully controlled in an independent manner. Finally, we demonstrate that our vertical silicon nanocolumn substrates support viable cell culture with minimal cell penetration and unhindered cell motility due to the blunt nanocolumn morphology. These results suggest that vertical silicon nanocolumn substrates may serve as a useful cellular interface platform for performing a statistically meaningful number of cellular experiments in the fields of biomolecular delivery, stem cell research, etc. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02384j

Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Jagannathan, Basanth

Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (<400sp°C). The double dilution was achieved by using a Ar (He) carrier for silane and its subsequent dilution by Hsb2. Structural and electrical properties of the films have been investigated over a wide growth space (temperature, power, pressure and dilution). Amorphous Si films deposited by silane diluted in He showed a compact nature and a hydrogen content of ˜8 at.% with a photo/dark conductivity ratio of 10sp4. Thin film transistors (W/L = 500/25) fabricated on these films, showed an on/off ratio of ˜10sp6 and a low threshold voltage of 2.92 volts. Microcrystalline Si films with a high crystalline content (˜80%) were also prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

Role of anti-adhesive barriers following rotator cuff repair surgery: an experimental study.

PubMed

Kalem, Mahmut; Şahin, Ercan; Songür, Murat; Zehir, Sinan; Armangil, Mehmet; Demirtaş, Mehmet A

2016-01-01

This experimental study investigates the effectiveness of expanded polytetrafluoroethylene (Dualmesh®, Gore Medical, Flagstaff, AZ, USA), sodium hyaluronate-carboxymethyl cellulose (Seprafilm®, Genzyme, Cambridge, MA, USA), and polysiloxane (silicone) as anti-adhesive barriers for inhibition of fibrosis in the subacromial area following rotator cuff repair. Rabbit rotator cuff tenotomy and repair was conducted on 24 rabbits in 4 groups: control (Group A), Dualmesh® (Group B), Seprafilm® (Group C), and silicone (Group D). Anti-adhesive barrier materials were sutured over the repaired rotator cuff. Macroscopic and histological evaluations were made at the end of the sixth postoperative week. Macroscopic evaluation revealed that minimal adhesion occurred in the control and silicone groups, while the Seprafilm® and Dualmesh® groups showed evidence of fibrosis. Microscopic evaluation revealed diffuse fibrosis and collagen accumulation in the Dualmesh® and Seprafilm® groups, whereas minimal collagen deposition and inflammatory cell reaction was found among the silicone and control groups. Significant differences were found between the silicone and Dualmesh® (p=0.001) and silicone and Seprafilm® groups (p=0.002), as well as between the control and Dualmesh® (p=0.002) and control and Seprafilm® groups (p=0.002). Expanded polytetrafluoroethylene (ePTFE/Dualmesh®) and sodium hyaluronate carboxymethyl cellulose (SH-CMC/Seprafilm®) did not prevent or attenuate postoperative subacromial fibrosis following cuff tear repair. Nor did silicone prevent or attenuate fibrosis. More detailed research is needed for development of an effective anti-adhesive barrier for use after rotator cuff tear surgery.

[Effect of surface organic modified nano-silicon-oxide on mechanical properties of A-2186 silicone elastomers].

PubMed

Guo, Nan; Jiao, Ting

2011-08-01

To study the effect of surface organic modified nano-silicon-oxide (SiO(x)) on mechanical properties of A-2186 silicone elastomers. Surface organic modified nano-silicon-oxide (SiO(x)) was added into A-2186 silicone elastomers by weight percentage of 2%, 4% and 6%. The one without addition served as a control. Standard specimens were made according to American Society for Testing Materials (ASTM). Their tensile strength, elongation at break, tear strength, and Shore A hardness were measured. The results were analyzed statistically by SPSS 10.0 software package. The tensile strength in the experimental groups was significantly lower than the control group (P<0.001).The elongation in the experimental groups was lower than the control group, but there was no significant difference between the 2wt% group and the control group (P=0.068). The tear strength in both the 2wt= group and 4wt= group were higher than the control group, and the difference was statistically significant; in addition, the tear strength in 2wt= group was higher than 4wt= group, which also showed statistical significance (P<0.001). With the increase of the added amount of surface modified nano-SiO(x), Shore A hardness increased and there was significant difference among them (P<0.001). Adding surface modified nano-SiO(x) has an effect on mechanical properties of A-2186 silicone elastomer, when 2wt= and 4wt= are added, tear strength of A-2186 improves significantly, with an increase of Shore A hardness and an decrease of tensile strength.

Advanced interface modelling of n-Si/HNO3 doped graphene solar cells to identify pathways to high efficiency

NASA Astrophysics Data System (ADS)

Zhao, Jing; Ma, Fa-Jun; Ding, Ke; Zhang, Hao; Jie, Jiansheng; Ho-Baillie, Anita; Bremner, Stephen P.

2018-03-01

In graphene/silicon solar cells, it is crucial to understand the transport mechanism of the graphene/silicon interface to further improve power conversion efficiency. Until now, the transport mechanism has been predominantly simplified as an ideal Schottky junction. However, such an ideal Schottky contact is never realised experimentally. According to literature, doped graphene shows the properties of a semiconductor, therefore, it is physically more accurate to model graphene/silicon junction as a Heterojunction. In this work, HNO3-doped graphene/silicon solar cells were fabricated with the power conversion efficiency of 9.45%. Extensive characterization and first-principles calculations were carried out to establish an advanced technology computer-aided design (TCAD) model, where p-doped graphene forms a straddling heterojunction with the n-type silicon. In comparison with the simple Schottky junction models, our TCAD model paves the way for thorough investigation on the sensitivity of solar cell performance to graphene properties like electron affinity. According to the TCAD heterojunction model, the cell performance can be improved up to 22.5% after optimizations of the antireflection coatings and the rear structure, highlighting the great potentials for fabricating high efficiency graphene/silicon solar cells and other optoelectronic devices.

Evaluation of a Silicone Membrane as an Alternative to Human Skin for Determining Skin Permeation Parameters of Chemical Compounds.

PubMed

Uchida, Takashi; Yakumaru, Masafumi; Nishioka, Keisuke; Higashi, Yoshihiro; Sano, Tomohiko; Todo, Hiroaki; Sugibayashi, Kenji

2016-01-01

We evaluated the effectiveness of a silicone membrane as an alternative to human skin using the skin permeation parameters of chemical compounds. An in vitro permeation study using 15 model compounds was conducted, and permeation parameters comprising permeability coefficient (P), diffusion parameter (DL(-2)), and partition parameter (KL) were calculated from each permeation profile. Significant correlations were obtained in log P, log DL(-2), and log KL values between the silicone membrane and human skin. DL(-2) values of model compounds, except flurbiprofen, in the silicone membrane were independent of the lipophilicity of the model compounds and were 100-fold higher than those in human skin. For antipyrine and caffeine, which are hydrophilic, KL values in the silicone membrane were 100-fold lower than those in human skin, and P values, calculated as the product of a DL(-2) and KL, were similar. For lipophilic compounds, such as n-butyl paraben and flurbiprofen, KL values for silicone were similar to or 10-fold higher than those in human skin, and P values for silicone were 100-fold higher than those in human skin. Furthermore, for amphiphilic compounds with log Ko/w values from 0.5 to 3.5, KL values in the silicone membrane were 10-fold lower than those in human skin, and P values for silicone were 10-fold higher than those in human skin. The silicone membrane was useful as a human skin alternative in an in vitro skin permeation study. However, depending on the lipophilicity of the model compounds, some parameters may be over- or underestimated.

Reflectance modeling of electrochemically P-type porosified silicon by Drude-Lorentz model

NASA Astrophysics Data System (ADS)

Kadi, M.; Media, E. M.; Gueddaoui, H.; Outemzabet, R.

2014-09-01

Porous silicon remains a promising material for optoelectronic application; in this field monitoring of the refractive index profile of the porous layer is required. We present in this work a procedure based on Drude-Lorentz model for calculating the optical parameters such as the high- and low-frequency dielectric constants, the plasma frequency by fitting the reflectance spectra. The experimental data of different porous silicon layer created above the bulk silicon material by electrochemical etching are extracted from reflectance measurements. The reflectance spectra are recorded in the spectral range 350-2500 nm. First, our computational procedure has been validated by its application on mono-crystalline silicon for the determination of its optical parameters. A good agreement between our results and those found in other works has been achieved in the visible-NIR range. In the second step, the model was applied to porous silicon (PS) layers. Useful optical parameters like the refractive index and the extinction coefficient, respectively, n (λ) and κ(λ), the band gap Eg, of different fabricated porous silicon layer are determined from simulated reflectance spectra. The correlation between the optical properties and the conditions of the electrochemical treatment was observed and analyzed. The main conclusion is that the reflected light from the porous silicon surface, although non-homogeneous and thus possessing the light scattering, is essentially smaller than the reflected light from the bulk crystalline silicon. These results show that the porous surface layer can act as an antireflection coating for silicon and could be used, in particular, in solar cells.

Strain-Induced Spin-Resonance Shifts in Silicon Devices

NASA Astrophysics Data System (ADS)

Pla, J. J.; Bienfait, A.; Pica, G.; Mansir, J.; Mohiyaddin, F. A.; Zeng, Z.; Niquet, Y. M.; Morello, A.; Schenkel, T.; Morton, J. J. L.; Bertet, P.

2018-04-01

In spin-based quantum-information-processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin linewidths, and it is therefore important to study, understand, and model such effects in order to better predict device performance. We investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminum microresonator is fabricated. The on-chip resonator provides two functions: it produces local strain in the silicon due to the larger thermal contraction of the aluminum, and it enables sensitive electron spin-resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations, we are able to reconstruct key features of our experiments, including the electron spin-resonance spectra. Our results are consistent with a recently observed mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain.

Rippled area formed by surface plasmon polaritons upon femtosecond laser double-pulse irradiation of silicon.

PubMed

Derrien, Thibault J-Y; Krüger, Jörg; Itina, Tatiana E; Höhm, Sandra; Rosenfeld, Arkadi; Bonse, Jörn

2013-12-02

The formation of near-wavelength laser-induced periodic surface structures (LIPSS) on silicon upon irradiation with sequences of Ti:sapphire femtosecond laser pulse pairs (pulse duration 150 fs, central wavelength 800 nm) is studied theoretically. For this purpose, the nonlinear generation of conduction band electrons in silicon and their relaxation is numerically calculated using a two-temperature model approach including intrapulse changes of optical properties, transport, diffusion and recombination effects. Following the idea that surface plasmon polaritons (SPP) can be excited when the material turns from semiconducting to metallic state, the "SPP active area" is calculated as function of fluence and double-pulse delay up to several picoseconds and compared to the experimentally observed rippled surface areas. Evidence is presented that multi-photon absorption explains the large increase of the rippled area for temporally overlapping pulses. For longer double-pulse delays, relevant relaxation processes are identified. The results demonstrate that femtosecond LIPSS on silicon are caused by the excitation of SPP and can be controlled by temporal pulse shaping.

Phenomenological model of photoluminescence degradation and photoinduced defect formation in silicon nanocrystal ensembles under singlet oxygen generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gongalsky, Maxim B., E-mail: mgongalsky@gmail.com; Timoshenko, Victor Yu.

2014-12-28

We propose a phenomenological model to explain photoluminescence degradation of silicon nanocrystals under singlet oxygen generation in gaseous and liquid systems. The model considers coupled rate equations, which take into account the exciton radiative recombination in silicon nanocrystals, photosensitization of singlet oxygen generation, defect formation on the surface of silicon nanocrystals as well as quenching processes for both excitons and singlet oxygen molecules. The model describes well the experimentally observed power law dependences of the photoluminescence intensity, singlet oxygen concentration, and lifetime versus photoexcitation time. The defect concentration in silicon nanocrystals increases by power law with a fractional exponent, whichmore » depends on the singlet oxygen concentration and ambient conditions. The obtained results are discussed in a view of optimization of the photosensitized singlet oxygen generation for biomedical applications.« less

Advanced process control and novel test methods for PVD silicon and elastomeric silicone coatings utilized on ion implant disks, heatsinks and selected platens

DOE Office of Scientific and Technical Information (OSTI.GOV)

Springer, J.; Allen, B.; Wriggins, W.

Coatings play multiple key roles in the proper functioning of mature and current ion implanters. Batch and serial implanters require strategic control of elemental and particulate contamination which often includes scrutiny of the silicon surface coatings encountering direct beam contact. Elastomeric Silicone Coatings must accommodate wafer loading and unloading as well as direct backside contact during implant plus must maintain rigid elemental and particulate specifications. The semiconductor industry has had a significant and continuous effort to obtain ultra-pure silicon coatings with sustained process performance and long life. Low particles and reduced elemental levels for silicon coatings are a major requirementmore » for process engineers, OEM manufacturers, and second source suppliers. Relevant data will be presented. Some emphasis and detail will be placed on the structure and characteristics of a relatively new PVD Silicon Coating process that is very dense and homogeneous. Wear rate under typical ion beam test conditions will be discussed. The PVD Silicon Coating that will be presented here is used on disk shields, wafer handling fingers/fences, exclusion zones of heat sinks, beam dumps and other beamline components. Older, legacy implanters can now provide extended process capability using this new generation PVD silicon - even on implanter systems that were shipped long before the advent of silicon coating for contamination control. Low particles and reduced elemental levels are critical performance criteria for the silicone elastomers used on disk heatsinks and serial implanter platens. Novel evaluation techniques and custom engineered tools are used to investigate the surface interaction characteristics of multiple Elastomeric Silicone Coatings currently in use by the industry - specifically, friction and perpendicular stiction. These parameters are presented as methods to investigate the critical wafer load and unload function. Unique tools and test methods have been developed that deliver accurate and repeatable data, which will be described.« less

Advanced process control and novel test methods for PVD silicon and elastomeric silicone coatings utilized on ion implant disks, heatsinks and selected platens

NASA Astrophysics Data System (ADS)

Springer, J.; Allen, B.; Wriggins, W.; Kuzbyt, R.; Sinclair, R.

2012-11-01

Coatings play multiple key roles in the proper functioning of mature and current ion implanters. Batch and serial implanters require strategic control of elemental and particulate contamination which often includes scrutiny of the silicon surface coatings encountering direct beam contact. Elastomeric Silicone Coatings must accommodate wafer loading and unloading as well as direct backside contact during implant plus must maintain rigid elemental and particulate specifications. The semiconductor industry has had a significant and continuous effort to obtain ultra-pure silicon coatings with sustained process performance and long life. Low particles and reduced elemental levels for silicon coatings are a major requirement for process engineers, OEM manufacturers, and second source suppliers. Relevant data will be presented. Some emphasis and detail will be placed on the structure and characteristics of a relatively new PVD Silicon Coating process that is very dense and homogeneous. Wear rate under typical ion beam test conditions will be discussed. The PVD Silicon Coating that will be presented here is used on disk shields, wafer handling fingers/fences, exclusion zones of heat sinks, beam dumps and other beamline components. Older, legacy implanters can now provide extended process capability using this new generation PVD silicon - even on implanter systems that were shipped long before the advent of silicon coating for contamination control. Low particles and reduced elemental levels are critical performance criteria for the silicone elastomers used on disk heatsinks and serial implanter platens. Novel evaluation techniques and custom engineered tools are used to investigate the surface interaction characteristics of multiple Elastomeric Silicone Coatings currently in use by the industry - specifically, friction and perpendicular stiction. These parameters are presented as methods to investigate the critical wafer load and unload function. Unique tools and test methods have been developed that deliver accurate and repeatable data, which will be described.

Comparing Biofouling Control Treatments for Use on Aquaculture Nets

PubMed Central

Swain, Geoffrey; Shinjo, Nagahiko

2014-01-01

Test panels comprised of uncoated, copper coated and silicone coated 7/8'' (22 mm) mesh knitted nylon net were evaluated to compare their properties and the effectiveness to prevent biofouling. This paper describes test procedures that were developed to quantify the performance in terms of antifouling, cleanability, drag and cost. The copper treatment was the most effective at controlling fouling, however, the silicone treated nets were the easiest to clean. The drag forces on the net were a function of twine diameter, twine roughness and fouling. After immersion, the uncoated nets had the most drag followed by the silicone and copper treatments. The cost of applying silicone to nets is high; however, improved formulations may provide a non-toxic alternative to control fouling. PMID:25474085

Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Demaurex, Bénédicte, E-mail: benedicte.demaurex@epfl.ch; Bartlome, Richard; Seif, Johannes P.

2014-08-07

Low-temperature (≤200 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-enhanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only frommore » the growth conditions but also from unintentional contamination of the reactor. Based on our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.« less

Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

DOE PAGES

Demaurex, Bénédicte; Bartlome, Richard; Seif, Johannes P.; ...

2014-08-05

Low-temperature (≤ 180 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-ehanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems notmore » only from the growth conditions but also from unintentional contamination of the reactor. As a result of our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.« less

Short-pulse laser interactions with disordered materials and liquids

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phinney, L.M.; Goldman, C.H.; Longtin, J.P.

High-power, short-pulse lasers in the picosecond and subpicosecond range are utilized in an increasing number of technologies, including materials processing and diagnostics, micro-electronics and devices, and medicine. In these applications, the short-pulse radiation interacts with a wide range of media encompassing disordered materials and liquids. Examples of disordered materials include porous media, polymers, organic tissues, and amorphous forms of silicon, silicon nitride, and silicon dioxide. In order to accurately model, efficiently control, and optimize short-pulse, laser-material interactions, a thorough understanding of the energy transport mechanisms is necessary. Thus, fractals and percolation theory are used to analyze the anomalous diffusion regimemore » in random media. In liquids, the thermal aspects of saturable and multiphoton absorption are examined. Finally, a novel application of short-pulse laser radiation to reduce surface adhesion forces in microstructures through short-pulse laser-induced water desorption is presented.« less

Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Tai, Lixuan; Zhu, Daming; Liu, Xing; Yang, Tieying; Wang, Lei; Wang, Rui; Jiang, Sheng; Chen, Zhenhua; Xu, Zhongmin; Li, Xiaolong

2018-06-01

The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates. [Figure not available: see fulltext.

Effect of gamma-ray irradiation on the surface states of MOS tunnel junctions

NASA Technical Reports Server (NTRS)

Ma, T. P.; Barker, R. C.

1974-01-01

Gamma-ray irradiation with doses up to 8 megarad produces no significant change on either the C(V) or the G(V) characteristics of MOS tunnel junctions with intermediate oxide thicknesses (40-60 A), whereas the expected flat-band shift toward negative electrode voltages occurs in control thick oxide capacitors. A simple tunneling model would explain the results if the radiation-generated hole traps are assumed to lie below the valence band of the silicon. The experiments also suggest that the observed radiation-generated interface states in conventional MOS devices are not due to the radiation damage of the silicon surface.

The benefit of silicone stents in primary endonasal dacryocystorhinostomy: a systematic review and meta-analysis.

PubMed

Sarode, D; Bari, D A; Cain, A C; Syed, M I; Williams, A T

2017-04-01

To critically evaluate the evidence comparing success rates of endonasal dacryocystorhinostomy (EN-DCR) with and without silicone tubing and to thus determine whether silicone intubation is beneficial in primary EN-DCR. Systematic review and meta-analysis. A literature search was performed on AMED, EMBASE, HMIC, MEDLINE, PsycINFO, BNI, CINAHL, HEALTH BUSINESS ELITE, CENTRAL and Cochrane Ear, Nose and Throat disorders groups trials register using a combination of various MeSH. The date of last search was January 2016. This review was limited to randomised controlled trials (RCTs) in English language. Risk of bias was assessed using the Cochrane Collaboration's risk of bias tool. Chi-square and I 2 statistics were calculated to determine the presence and extent of statistical heterogeneity. Study selection, data extraction and risk of bias scoring were performed independently by two authors in concordance with the PRISMA statement. Five RCTs (447 primary EN-DCR procedures in 426 patients) were included for analysis. Moderate interstudy statistical heterogeneity was demonstrated (Chi 2 = 6.18; d.f. = 4; I 2 = 35%). Bicanalicular silicone stents were used in 229 and not used in 218 procedures. The overall success rate of EN-DCR was 92.8% (415/447). The success rate of EN-DCR was 93.4% (214/229) with silicone tubing and 92.2% (201/218) without silicone tubing. Meta-analysis using a random-effects model showed no statistically significant difference in outcomes between the two groups (P = 0.63; RR = 0.79; 95% CI = 0.3-2.06). Our review and meta-analysis did not demonstrate an additional advantage of silicone stenting. A high-quality well-powered prospective multicentre RCT is needed to further clarify on the benefit of silicone stents. © 2016 John Wiley & Sons Ltd.

Effect of embedded dexamethasone in cochlear implant array on insertion forces in an artificial model of scala tympani.

PubMed

Nguyen, Yann; Bernardeschi, Daniele; Kazmitcheff, Guillaume; Miroir, Mathieu; Vauchel, Thomas; Ferrary, Evelyne; Sterkers, Olivier

2015-02-01

Loading otoprotective drug into cochlear implant might change its mechanical properties, thus compromising atraumatic insertion. This study evaluated the effect of incorporation of dexamethasone (DXM) in the silicone of cochlear implant arrays on insertion forces. Local administration of DXM with embedded array can potentially reduce inflammation and fibrosis after cochlear implantation procedure to improve hearing preservation and reduce long-term impedances. Four models of arrays have been tested: 0.5-mm distal diameter array (n = 5) used as a control, drug-free 0.4-mm distal diameter array (n = 5), 0.4-mm distal diameter array with 1% eluded DXM silicone (n = 5), and 0.4-mm distal diameter array with 10% eluded DXM silicone (n = 5). Via a motorized insertion bench, each array has been inserted into an artificial scala tympani model. The forces were recorded by a 6-axis force sensor. Each array was tested seven times for a total number of 140 insertions. During the first 10-mm insertion, no difference between the four models was observed. From 10- to 24-mm insertion, the 0.5-mm distal diameter array presented higher insertion forces than the drug-free 0.4-mm distal diameter arrays, with or without DXM. Friction forces for drug-free 0.4-mm distal diameter array and 0.4-mm distal diameter DXM eluded arrays were similar on all insertion lengths. Incorporation of DXM in silicone for cochlear implant design does not change electrode array insertion forces. It does not raise the risk of trauma during array insertion, making it suitable for long-term in situ administration to the cochlea.

Modeling of microporous silicon betaelectric converter with 63Ni plating in GEANT4 toolkit*

NASA Astrophysics Data System (ADS)

Zelenkov, P. V.; Sidorov, V. G.; Lelekov, E. T.; Khoroshko, A. Y.; Bogdanov, S. V.; Lelekov, A. T.

2016-04-01

The model of electron-hole pairs generation rate distribution in semiconductor is needed to optimize the parameters of microporous silicon betaelectric converter, which uses 63Ni isotope radiation. By using Monte-Carlo methods of GEANT4 software with ultra-low energy electron physics models this distribution in silicon was calculated and approximated with exponential function. Optimal pore configuration was estimated.

Anatomy of a Silicon Compiler

DTIC Science & Technology

1994-10-04

Recognition 321 Anton StOWz*e 21.1. ALGORITHM AND ARCHITECTURE ............... 322 21.2. SYSTEM ARCHITECTURE .................... 325 213. CHIP ARCHiTECTURES...age controlled switch. The second is a linear model where each transistor is mod- eled by a voltage controlled switch in series with a resistor, and...the blocks being co- linear . Routing channels separate blocks which are adjacent. Channels are also placed along the top edge of each block in order to

Vacuum Microelectronic Field Emission Array Devices for Microwave Amplification.

NASA Astrophysics Data System (ADS)

Mancusi, Joseph Edward

This dissertation presents the design, analysis, and measurement of vacuum microelectronic devices which use field emission to extract an electron current from arrays of silicon cones. The arrays of regularly-spaced silicon cones, the field emission cathodes or emitters, are fabricated with an integrated gate electrode which controls the electric field at the tip of the cone, and thus the electron current. An anode or collector electrode is placed above the array to collect the emission current. These arrays, which are fabricated in a standard silicon processing facility, are developed for use as high power microwave amplifiers. Field emission has been studied extensively since it was first characterized in 1928, however due to the large electric fields required practical field emission devices are difficult to make. With the development of the semiconductor industry came the development of fabrication equipment and techniques which allow for the manufacture of the precision micron-scale structures necessary for practical field emission devices. The active region of a field emission device is a vacuum, therefore the electron travel is ballistic. This analysis of field emission devices includes electric field and electron emission modeling, development of a device equivalent circuit, analysis of the parameters in the equivalent circuit, and device testing. Variations in device structure are taken into account using a statistical model based upon device measurements. Measurements of silicon field emitter arrays at DC and RF are presented and analyzed. In this dissertation, the equivalent circuit is developed from the analysis of the device structure. The circuit parameters are calculated from geometrical considerations and material properties, or are determined from device measurements. It is necessary to include the emitter resistance in the equivalent circuit model since relatively high resistivity silicon wafers are used. As is demonstrated, the circuit model accurately predicts the magnitude of the emission current at a number of typical bias current levels when the device is operating at frequencies within the range of 10 MHz to 1 GHz. At low frequencies and at high frequencies within this range, certain parameters are negligible, and simplifications may be made in the equivalent circuit model.

Implementation of a Si/SiC hybrid optically controlled high-power switching device

NASA Astrophysics Data System (ADS)

Bhadri, Prashant; Ye, Kuntao; Guliants, E.; Beyette, Fred R., Jr.

2002-03-01

The ever-increasing performance and economy of operation requirements placed on commercial and military transport aircraft are resulting in very complex systems. As a result, the use of fiber optic component technology has lead to high data throughput, immunity to EMI, reduced certification and maintenance costs and reduced weight features. In particular, in avionic systems, data integrity and high data rates are necessary for stable flight control. Fly-by-Light systems that use optical signals to actuate the flight control surfaces of an aircraft have been suggested as a solution to the EMI problem in avionic systems. Current fly-by-light systems are limited by the lack of optically activated high-power switching devices. The challenge has been the development of an optoelectronic switching technology that can withstand the high power and harsh environmental conditions common in a flight surface actuation system. Wide bandgap semiconductors such as Silicon Carbide offer the potential to overcome both the temperature and voltage blocking limitations that inhibit the use of Silicon. Unfortunately, SiC is not optically active at the near IR wavelengths where communications grade light sources are readily available. Thus, we have proposed a hybrid device that combines a silicon based photoreceiver model with a SiC power transistor. When illuminated with the 5mW optical control signal the silicon chip produces a 15mA drive current for a SiC Darlington pair. The SiC Darlington pair then produces a 150 A current that is suitable for driving an electric motor with sufficient horsepower to actuate the control surfaces on an aircraft. Further, when the optical signal is turned off, the SiC is capable of holding off a 270 V potential to insure that the motor drive current is completely off. We present in this paper the design and initial tests from a prototype device that has recently been fabricated.

Failure rates for accelerated acceptance testing of silicon transistors

NASA Technical Reports Server (NTRS)

Toye, C. R.

1968-01-01

Extrapolation tables for the control of silicon transistor product reliability have been compiled. The tables are based on a version of the Arrhenius statistical relation and are intended to be used for low- and medium-power silicon transistors.

Foveal light exposure is increased at the time of removal of silicone oil with the potential for phototoxicity.

PubMed

Dogramaci, Mahmut; Williams, Katie; Lee, Ed; Williamson, Tom H

2013-01-01

There is sudden and dramatic visual function deterioration in 1-10 % of eyes filled with silicone oil at the time of removal of silicon oil. Transmission of high-energy blue light is increased in eyes filled with silicone oil. We sought to identify if increased foveal light exposure is a potential factor in the pathophysiology of the visual loss at the time of removal of silicone oil. A graphic ray tracing computer program and laboratory models were used to determine the effect of the intraocular silicone oil bubble size on the foveal illuminance at the time of removal of silicone oil under direct microscope light. The graphic ray tracing computer program revealed a range of optical vignetting effects created by different sizes of silicone oil bubble within the vitreous cavity giving rise to an uneven macular illumination. The laboratory model was used to quantify the variation of illuminance at the foveal region with different sizes of silicone oil bubble with in the vitreous cavity at the time of removal of silicon oil under direct microscope light. To substantiate the hypothesis of the light toxicity during removal of silicone oil, The outcome of oil removal procedures performed under direct microscope illumination in compared to those performed under blocked illumination. The computer program showed that the optical vignetting effect at the macula was dependent on the size of the intraocular silicone oil bubble. The laboratory eye model showed that the foveal illuminance followed a bell-shaped curve with 70 % greater illuminance demonstrated at with 50-60 % silicone oil fill. The clinical data identified five eyes with unexplained vision loss out of 114 eyes that had the procedure performed under direct microscope illumination compared to none out of 78 eyes that had the procedure under blocked illumination. Foveal light exposure, and therefore the potential for phototoxicity, is transiently increased at the time of removal of silicone oil. This is due to uneven macular illumination resulting from the optical vignetting effect of different silicone oil bubble sizes. The increase in foveal light exposure may be significant when the procedure is performed under bright operating microscope light on already stressed photoreceptors of an eye filled with silicon oil. We advocate the use of precautions, such as central shadow filter on the operating microscope light source to reduce foveal light exposure and the risk of phototoxicity at the time of removal of silicone oil. The graphic ray tracing computer program used in this study shows promise in eye modeling for future studies.

Dexamethasone implant in silicone oil: in vitro behavior.

PubMed

Flores-Villalobos, Erick Omar; Ramírez-Estudillo, J Abel; Robles-Contreras, Atzin; Oliva-Ramírez, Jacqueline L

2018-01-01

To determine the effect of the silicone on the dexamethasone intravitreal implant. Basic, experimental, prospective and transversal study performed at the hospital "Nuestra Señora de la Luz" in Mexico City. One dexamethasone implant was placed in a test tube with 4 mL of each tamponade medium: 1000cS, 5000cS and heavy silicone oil; basic saline solution was used as the control medium. Photographs were taken weekly for 12 months. 200 µL samples were taken from each medium at 24 h, 1, 2 weeks and monthly for 12 months. ELISA test was performed to quantify dexamethasone release in every sample. An inflammatory stimulus was created and later exposed it to every sample in order to test their anti-inflammatory capacity by cytokine analysis using cytometric bead array. Statistically significant results were obtained with p < 0.05. Photographic follow-up showed disintegration of the implant in control medium. Implants in silicone oil suffered no changes during follow-up. Dexamethasone levels in control medium showed stability from month 2 to 12. Silicone oil mediums showed irregular dexamethasone release during the 1 year period. Dexamethasone in control medium had inhibitory effects on TNF-α starting at 24 h (p < 0.001) and remained stable. Dexamethasone in 1000cS silicone oil showed inhibitory effects from month 2 (p < 0.001) until month 6 (p < 0.001). Implants in denser silicone oils showed no inhibitory effects in any of the samples. Denser mediums altered the implant pharmacokinetics and showed no anti-inflammatory effects even when concentrations were quantified at levels similar to control medium in vitro.

Edge-defined film-fed growth of thin silicon sheets

NASA Technical Reports Server (NTRS)

Ettouney, H. M.; Kalejs, J. P.

1984-01-01

Finite element analysis was used on two length scales to understand crystal growth of thin silicon sheets. Thermal-capillary models of entire ribbon growth systems were developed. Microscopic modeling of morphological structure of melt/solid interfaces beyond the point of linear instability was carried out. The application to silicon system is discussed.

Control of grown-in defects and oxygen precipitates in silicon wafers with DZ-IG structure by ultrahigh-temperature rapid thermal oxidation

NASA Astrophysics Data System (ADS)

Maeda, Susumu; Sudo, Haruo; Okamura, Hideyuki; Nakamura, Kozo; Sueoka, Koji; Izunome, Koji

2018-04-01

A new control technique for achieving compatibility between crystal quality and gettering ability for heavy metal impurities was demonstrated for a nitrogen-doped Czochralski silicon wafer with a diameter of 300 mm via ultra-high temperature rapid thermal oxidation (UHT-RTO) processing. We have found that the DZ-IG structure with surface denuded zone and the wafer bulk with dense oxygen precipitates were formed by the control of vacancies in UHT-RTO process at temperature exceeding 1300 °C. It was also confirmed that most of the void defects were annihilated from the sub-surface of the wafer due to the interstitial Si atoms that were generated at the SiO2/Si interface. These results indicated that vacancies corresponded to dominant species, despite numerous interstitial silicon injections. We have explained these prominent features by the degree of super-saturation for the interstitial silicon due to oxidation and the precise thermal properties of the vacancy and interstitial silicon.

Dopant-controlled single-electron pumping through a metallic island

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wenz, Tobias, E-mail: tobias.wenz@ptb.de; Hohls, Frank, E-mail: frank.hohls@ptb.de; Jehl, Xavier

We investigate a hybrid metallic island/single dopant electron pump based on fully depleted silicon-on-insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used to control the resonance conditions. Applying radio frequency signals to the gates, non-adiabatic quantized electron pumping is achieved. A simple deterministic model is presented and confirmed by comparing measurements with simulations.

Comparison of Six Different Silicones In Vitro for Application as Glaucoma Drainage Device

PubMed Central

Windhövel, Claudia; Harder, Lisa; Bach, Jan-Peter; Teske, Michael; Grabow, Niels; Eickner, Thomas; Chichkov, Boris; Nolte, Ingo

2018-01-01

Silicones are widely used in medical applications. In ophthalmology, glaucoma drainage devices are utilized if conservative therapies are not applicable or have failed. Long-term success of these devices is limited by failure to control intraocular pressure due to fibrous encapsulation. Therefore, different medical approved silicones were tested in vitro for cell adhesion, cell proliferation and viability of human Sclera (hSF) and human Tenon fibroblasts (hTF). The silicones were analysed also depending on the sample preparation according to the manufacturer’s instructions. The surface quality was characterized with environmental scanning electron microscope (ESEM) and water contact angle measurements. All silicones showed homogeneous smooth and hydrophobic surfaces. Cell adhesion was significantly reduced on all silicones compared to the negative control. Proliferation index and cell viability were not influenced much. For development of a new glaucoma drainage device, the silicones Silbione LSR 4330 and Silbione LSR 4350, in this study, with low cell counts for hTF and low proliferation indices for hSF, and silicone Silastic MDX4-4210, with low cell counts for hSF and low proliferation indices for hTF, have shown the best results in vitro. Due to the high cell adhesion shown on Silicone LSR 40, 40,026, this material is unsuitable. PMID:29495462

Hall mobility in multicrystalline silicon

NASA Astrophysics Data System (ADS)

Schindler, F.; Geilker, J.; Kwapil, W.; Warta, W.; Schubert, M. C.

2011-08-01

Knowledge of the carrier mobility in silicon is of utmost importance for photovoltaic applications, as it directly influences the diffusion length and thereby the cell efficiency. Moreover, its value is needed for a correct quantitative evaluation of a variety of lifetime measurements. However, models that describe the carrier mobility in silicon are based on theoretical calculations or fits to experimental data in monocrystalline silicon. Multicrystalline (mc) silicon features crystal defects such as dislocations and grain boundaries, with the latter possibly leading to potential barriers through the trapping of charge carriers and thereby influencing the mobility, as shown, for example, by Maruska et al. [Appl. Phys. Lett. 36, 381 (1980)]. To quantify the mobilities in multicrystalline silicon, we performed Hall measurements in p-type mc-Si samples of various resistivities and different crystal structures and compared the data to majority carrier Hall mobilities in p-type monocrystalline floatzone (FZ) silicon. For lack of a model that provides reliable values of the Hall mobility in silicon, an empirical fit similar to existing models for conductivity mobilities is proposed based on Hall measurements of monocrystalline p-type FZ silicon. By comparing the measured Hall mobilities obtained from mc silicon with the corresponding Hall mobilities in monocrystalline silicon of the same resistivity, we found that the mobility reduction due to the presence of crystal defects in mc-Si ranges between 0% and 5% only. Mobility decreases of up to 30% as reported by Peter et al. [Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, 1-5 September 2008], or even of a factor of 2 to 3 as detected by Palais et al. [Mater. Sci. Eng. B 102, 184 (2003)], in multicrystalline silicon were not observed.

Effects of silicone expanders and implants on echocardiographic image quality after breast reconstruction.

PubMed

Pignatti, Marco; Mantovani, Francesca; Bertelli, Luca; Barbieri, Andrea; Pacchioni, Lucrezia; Loschi, Pietro; De Santis, Giorgio

2013-08-01

Use of silicone expanders and implants is the most common breast reconstruction technique after mastectomy. Postmastectomy patients often need echocardiographic monitoring of potential cardiotoxicity induced by cancer chemotherapy. The impairment of the echocardiographic acoustic window caused by silicone implants for breast augmentation has been reported. This study investigates whether the echocardiographic image quality was impaired in women reconstructed with silicone expanders and implants. The records of 44 consecutive women who underwent echocardiographic follow-up after breast reconstruction with expanders and implants at the authors' institution from January of 2000 to August of 2012 were reviewed. The population was divided into a study group (left or bilateral breast expanders/implants, n=30) and a control group (right breast expanders/implants, n=14). The impact of breast expanders/implants on echocardiographic image quality was tested (analysis of covariance model). Patients with a breast expander/implant (left or bilateral and right breast expanders/implants) were included. The mean volume of the breast devices was 353.2±125.5 cc. The quality of the echocardiographic images was good or sufficient in the control group; in the study group, it was judged as adequate in only 50 percent of cases (15 patients) and inadequate in the remaining 15 patients (p<0.001). At multivariable analysis, a persistent relationship between device position (left versus right) and image quality (p=0.001) was shown, independent from other factors. Silicone expanders and implants in postmastectomy left breast reconstruction considerably reduce the image quality of echocardiography. This may have important clinical implications, given the need for periodic echocardiographic surveillance before and during chemotherapy. Therapeutic, III.

Electrochemical method for defect delineation in silicon-on-insulator wafers

DOEpatents

Guilinger, Terry R.; Jones, Howland D. T.; Kelly, Michael J.; Medernach, John W.; Stevenson, Joel O.; Tsao, Sylvia S.

1991-01-01

An electrochemical method for defect delineation in thin-film SOI or SOS wafers in which a surface of a silicon wafer is electrically connected so as to control the voltage of the surface within a specified range, the silicon wafer is then contacted with an electrolyte, and, after removing the electrolyte, defects and metal contamination in the silicon wafer are identified.

Formation of iron disilicide on amorphous silicon

NASA Astrophysics Data System (ADS)

Erlesand, U.; Östling, M.; Bodén, K.

1991-11-01

Thin films of iron disilicide, β-FeSi 2 were formed on both amorphous silicon and on crystalline silicon. The β-phase is reported to be semiconducting with a direct band-gap of about 0.85-0.89 eV. This phase is known to form via a nucleation-controlled growth process on crystalline silicon and as a consequence a rather rough silicon/silicide interface is usually formed. In order to improve the interface a bilayer structure of amorphous silicon and iron was sequentially deposited on Czochralski <111> silicon in an e-gun evaporation system. Secondary ion mass spectrometry profiling (SIMS) and scanning electron micrographs revealed an improvement of the interface sharpness. Rutherford backscattering spectrometry (RBS) and X-ray diffractiometry showed β-FeSi 2 formation already at 525°C. It was also observed that the silicide growth was diffusion-controlled, similar to what has been reported for example in the formation of NiSi 2 for the reaction of nickel on amorphous silicon. The kinetics of the FeSi 2 formation in the temperature range 525-625°C was studied by RBS and the activation energy was found to be 1.5 ± 0.1 eV.

Predictive & Prognostic Controller for Wide Band Gap (Silicon Carbide) Power Conversion (Preprint)

DTIC Science & Technology

2006-11-01

that is required for them to achieve their full potential, or other elements that are different from the traditional practice of Power Conditioning...symptoms, medical clinicians rely strongly on family history, individual history, environmental conditions or exposures and lifestyle to ascertain the...the model and possibly related models of the particular converter design. The lifestyle , the stress and the exposure that is considered in human

CFD Modeling of Boron Removal from Liquid Silicon with Cold Gases and Plasma

NASA Astrophysics Data System (ADS)

Vadon, Mathieu; Sortland, Øyvind; Nuta, Ioana; Chatillon, Christian; Tansgtad, Merete; Chichignoud, Guy; Delannoy, Yves

2018-03-01

The present study focuses on a specific step of the metallurgical path of purification to provide solar-grade silicon: the removal of boron through the injection of H2O(g)-H2(g)-Ar(g) (cold gas process) or of Ar-H2-O2 plasma (plasma process) on stirred liquid silicon. We propose a way to predict silicon and boron flows from the liquid silicon surface by using a CFD model (©Ansys Fluent) combined with some results on one-dimensional diffusive-reactive models to consider the formation of silica aerosols in a layer above the liquid silicon. The comparison of the model with experimental results on cold gas processes provided satisfying results for cases with low and high concentrations of oxidants. This confirms that the choices of thermodynamic data of HBO(g) and the activity coefficient of boron in liquid silicon are suitable and that the hypotheses regarding similar diffusion mechanisms at the surface for HBO(g) and SiO(g) are appropriate. The reasons for similar diffusion mechanisms need further enquiry. We also studied the effect of pressure and geometric variations in the cold gas process. For some cases with high injection flows, the model slightly overestimates the boron extraction rate, and the overestimation increases with increasing injection flow. A single plasma experiment from SIMaP (France) was modeled, and the model results fit the experimental data on purification if we suppose that aerosols form, but it is not enough to draw conclusions about the formation of aerosols for plasma experiments.

CFD Modeling of Boron Removal from Liquid Silicon with Cold Gases and Plasma

NASA Astrophysics Data System (ADS)

Vadon, Mathieu; Sortland, Øyvind; Nuta, Ioana; Chatillon, Christian; Tansgtad, Merete; Chichignoud, Guy; Delannoy, Yves

2018-06-01

The present study focuses on a specific step of the metallurgical path of purification to provide solar-grade silicon: the removal of boron through the injection of H2O(g)-H2(g)-Ar(g) (cold gas process) or of Ar-H2-O2 plasma (plasma process) on stirred liquid silicon. We propose a way to predict silicon and boron flows from the liquid silicon surface by using a CFD model (©Ansys Fluent) combined with some results on one-dimensional diffusive-reactive models to consider the formation of silica aerosols in a layer above the liquid silicon. The comparison of the model with experimental results on cold gas processes provided satisfying results for cases with low and high concentrations of oxidants. This confirms that the choices of thermodynamic data of HBO(g) and the activity coefficient of boron in liquid silicon are suitable and that the hypotheses regarding similar diffusion mechanisms at the surface for HBO(g) and SiO(g) are appropriate. The reasons for similar diffusion mechanisms need further enquiry. We also studied the effect of pressure and geometric variations in the cold gas process. For some cases with high injection flows, the model slightly overestimates the boron extraction rate, and the overestimation increases with increasing injection flow. A single plasma experiment from SIMaP (France) was modeled, and the model results fit the experimental data on purification if we suppose that aerosols form, but it is not enough to draw conclusions about the formation of aerosols for plasma experiments.

Automatic method of measuring silicon-controlled-rectifier holding current

NASA Technical Reports Server (NTRS)

Maslowski, E. A.

1972-01-01

Development of automated silicon controlled rectifier circuit for measuring minimum anode current required to maintain rectifiers in conducting state is discussed. Components of circuit are described and principles of operation are explained. Illustration of circuit is provided.

Nanopattern-guided growth of single-crystal silicon on amorphous substrates and high-performance sub-100 nm thin-film transistors for three-dimensional integrated circuits

NASA Astrophysics Data System (ADS)

Gu, Jian

This thesis explores how nanopatterns can be used to control the growth of single-crystal silicon on amorphous substrates at low temperature, with potential applications on flat panel liquid-crystal display and 3-dimensional (3D) integrated circuits. I first present excimer laser annealing of amorphous silicon (a-Si) nanostructures on thermally oxidized silicon wafer for controlled formation of single-crystal silicon islands. Preferential nucleation at pattern center is observed due to substrate enhanced edge heating. Single-grain silicon is obtained in a 50 nm x 100 nm rectangular pattern by super lateral growth (SLG). Narrow lines (such as 20-nm-wide) can serve as artificial heterogeneous nucleation sites during crystallization of large patterns, which could lead to the formation of single-crystal silicon islands in a controlled fashion. In addition to eximer laser annealing, NanoPAtterning and nickel-induced lateral C&barbelow;rystallization (NanoPAC) of a-Si lines is presented. Single-crystal silicon is achieved by NanoPAC. The line width of a-Si affects the grain structure of crystallized silicon lines significantly. Statistics show that single-crystal silicon is formed for all lines with width between 50 nm to 200 nm. Using in situ transmission electron microscopy (TEM), nickel-induced lateral crystallization (Ni-ILC) of a-Si inside a pattern is revealed; lithography-constrained single seeding (LISS) is proposed to explain the single-crystal formation. Intragrain line and two-dimensional defects are also studied. To test the electrical properties of NanoPAC silicon films, sub-100 nm thin-film transistors (TFTs) are fabricated using Patten-controlled crystallization of Ṯhin a-Si channel layer and H&barbelow;igh temperature (850°C) annealing, coined PaTH process. PaTH TFTs show excellent device performance over traditional solid phase crystallized (SPC) TFTs in terms of threshold voltage, threshold voltage roll-off, leakage current, subthreshold swing, on/off current ratio, device-to-device uniformity etc. Two-dimensional device simulations show that PaTH TFTs are comparable to silicon-on-insulator (SOI) devices, making it a promising candidate for the fabrication of future high performance, low-power 3D integrated circuits. Finally, an ultrafast nanolithography technique, laser-assisted direct imprint (LADI) is introduced. LADI shows the ability of patterning nanostructures directly in silicon in nanoseconds with sub-10 nm resolution. The process has potential applications in multiple disciplines, and could be extended to other materials and processes.

[Effect of silicon coating on bonding strength of ceramics and titanium].

PubMed

Zhou, Shu; Wang, Yu; Zhang, Fei-Min; Guang, Han-Bing

2009-06-01

This study investigated the effect of silicon coating (SiO2) by solution-gelatin (Sol-Gel) technology on bonding strength of titanium and ceramics. Sixteen pure titanium specimens with the size of 25 mm x 3 mm x 0.5 mm were divided into two groups (n=8), test group was silicon coated by Sol-Gel technology, the other one was control group. The middle area of the samples were veneered with Vita Titankeramik system, the phase composition of two specimens were characterized by X-ray diffraction (XRD). The bonding strength of titanium/porcelain was evaluated using three-point bending test. The interface of titanium and porcelain and fractured titanium surface were investigated by scanning electron microscope (SEM) with energy depressive spectrum (EDS). Contents of surface silicon increased after modification with silicon coated by Sol-Gel technology. The mean bonding strength of test group and control group were (37.768 +/- 0.777) MPa and (29.483 +/- 1.007) MPa. There was a statistically significant difference (P=0.000) between them. The bonded ceramic boundary of test group was wider than control group. Silicon coating by Sol-Gel technology was significant in improving bonding strength of titanium/Vita Titankeramik system.

Modelling and fabrication of high-efficiency silicon solar cells

NASA Astrophysics Data System (ADS)

Rohatgi, A.; Smith, A. W.; Salami, J.

1991-10-01

This report covers the research conducted on modelling and development of high efficiency silicon solar cells during the period May 1989 to August 1990. First, considerable effort was devoted toward developing a ray tracing program for the photovoltaic community to quantify and optimize surface texturing for solar cells. Second, attempts were made to develop a hydrodynamic model for device simulation. Such a model is somewhat slower than drift-diffusion type models like PC-1D, but it can account for more physical phenomena in the device, such as hot carrier effects, temperature gradients, thermal diffusion, and lattice heat flow. In addition, Fermi-Dirac statistics have been incorporated into the model to deal with heavy doping effects more accurately. The third and final component of the research includes development of silicon cell fabrication capabilities and fabrication of high efficiency silicon cells.

Optical charge state control of spin defects in 4H-SiC

DOE PAGES

Wolfowicz, Gary; Anderson, Christopher P.; Yeats, Andrew L.; ...

2017-11-30

Defects in silicon carbide (SiC) have emerged as a favorable platform for optically active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stability. We investigate this charge state control for two major spin qubits in 4H-SiC, the divacancy and silicon vacancy, obtaining bidirectional optical charge conversion between the bright and dark states of these defects. We measure increased photoluminescence from divacancy ensembles by up to three orders of magnitude using near-ultraviolet excitation, depending on the substrate, and without degrading themore » electron spin coherence time. This charge conversion remains stable for hours at cryogenic temperatures, allowing spatial and persistent patterning of the charge state populations. As a result, we develop a comprehensive model of the defects and optical processes involved, offering a strong basis to improve material design and to develop quantum applications in SiC.« less

Optical charge state control of spin defects in 4H-SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wolfowicz, Gary; Anderson, Christopher P.; Yeats, Andrew L.

Defects in silicon carbide (SiC) have emerged as a favorable platform for optically active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stability. We investigate this charge state control for two major spin qubits in 4H-SiC, the divacancy and silicon vacancy, obtaining bidirectional optical charge conversion between the bright and dark states of these defects. We measure increased photoluminescence from divacancy ensembles by up to three orders of magnitude using near-ultraviolet excitation, depending on the substrate, and without degrading themore » electron spin coherence time. This charge conversion remains stable for hours at cryogenic temperatures, allowing spatial and persistent patterning of the charge state populations. As a result, we develop a comprehensive model of the defects and optical processes involved, offering a strong basis to improve material design and to develop quantum applications in SiC.« less

Liquid crystal colloidal structures for increased silicone deposition efficiency on colour-treated hair.

PubMed

Brown, M A; Hutchins, T A; Gamsky, C J; Wagner, M S; Page, S H; Marsh, J M

2010-06-01

An approach is described to increase the deposition efficiency of silicone conditioning actives from a shampoo on colour-treated hair via liquid crystal (LC) colloidal structures, created with a high charge density cationic polymer, poly(diallyldimethyl ammonium chloride) and negatively charged surfactants. LCs are materials existing structurally between the solid crystalline and liquid phases, and several techniques, including polarized light microscopy, small angle X-Ray analysis, and differential scanning calorimetry, were used to confirm the presence of the LC structures in the shampoo formula. Silicone deposition from the LC-containing shampoo and a control shampoo was measured on a range of hair substrates, and data from inductively coupled plasma optical emission spectroscopy analysis and ToF-SIMS imaging illustrate the enhancement in silicone deposition for the LC shampoo on all hair types tested, with the most pronounced enhancement occurring on hair that had undergone oxidative treatments, such as colouring. A model is proposed in which the LC structure deposits from the shampoo onto the hair to: (i) provide 'slip planes' along the hair surface for wet conditioning purposes and (ii) form a hydrophobic layer which changes the surface energy of the fibres. This increase in hydrophobicity of the hair surface thereby increases the deposition efficiency of silicone conditioning ingredients. Zeta potential measurements, dynamic absorbency testing analysis and ToF-SIMS imaging were used to better understand the mechanisms of action. This approach to increasing silicone deposition is an improvement relative to conventional conditioning shampoos, especially for colour-treated hair.

Specific spice modeling of microcrystalline silicon TFTs

NASA Astrophysics Data System (ADS)

Moustapha, O.; Bui, V. D.; Bonnassieux, Y.; Parey, J. Y.

2008-03-01

In this paper we present a specific spice static and dynamic model of microcrystalline silicon (μc-Si) thin film transistors (TFTs) taking into account the access resistances and the capacitors contributions. The previously existing models of amorphous silicon and polysilicon TFTs were not completely suited, so we combined them to build a new specific model of μc-Si TFTs. The reliability of the model is then checked by the comparison of experimental measurements to simulations and by simulating the characteristics of some electronic devices (OLED pixels, inverters, and so on).

Zipping dielectric elastomer actuators: characterization, design and modeling

NASA Astrophysics Data System (ADS)

Maffli, L.; Rosset, S.; Shea, H. R.

2013-10-01

We report on miniature dielectric elastomer actuators (DEAs) operating in zipping mode with an analytical model that predicts their behavior. Electrostatic zipping is a well-known mechanism in silicon MEMS to obtain large deformations and forces at lower voltages than for parallel plate electrostatic actuation. We extend this concept to DEAs, which allows us to obtain much larger out-of-plane displacements compared to silicon thanks to the softness of the elastomer membrane. We study experimentally the effect of sidewall angles and elastomer prestretch on 2.3 mm diameter actuators with PDMS membranes. With 15° and 22.5° sidewall angles, the devices zip in a bistable manner down 300 μm to the bottom of the chambers. The highly tunable bistable behavior is controllable by both chamber geometry and membrane parameters. Other specific characteristics of zipping DEAs include well-controlled deflected shape, tunable displacement versus voltage characteristics to virtually any shape, including multi-stable modes, sealing of embedded holes or channels for valving action and the reduction of the operating voltage. These properties make zipping DEAs an excellent candidate for applications such as integrated microfluidics actuators or Braille displays.

Low cost silicon solar array project large area silicon sheet task: Silicon web process development

NASA Technical Reports Server (NTRS)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Blais, P. D.; Davis, J. R., Jr.

1977-01-01

Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

Low cost solar array project. Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process

NASA Technical Reports Server (NTRS)

1980-01-01

Technical activities are reported in the design of process, facilities, and equipment for producing silicon at a rate and price comensurate with production goals for low cost solar cell modules. The silane-silicone process has potential for providing high purity poly-silicon on a commercial scale at a price of fourteen dollars per kilogram by 1986, (1980 dollars). Commercial process, economic analysis, process support research and development, and quality control are discussed.

In vitro and in vivo evaluation of novel ciprofloxacin-releasing silicone hydrogel contact lenses.

PubMed

Hui, Alex; Willcox, Mark; Jones, Lyndon

2014-07-15

The purpose of this study was to evaluate ciprofloxacin-releasing silicone hydrogel contact lens materials in vitro and in vivo for the treatment of microbial keratitis. Model silicone hydrogel contact lens materials were manufactured using a molecular imprinting technique to modify ciprofloxacin release kinetics. Various contact lens properties, including light transmission and surface wettability, were determined, and the in vitro ciprofloxacin release kinetics elucidated using fluorescence spectrophotometry. The materials then were evaluated for their ability to inhibit Pseudomonas aeruginosa growth in vitro and in an in vivo rabbit model of microbial keratitis. Synthesized lenses had similar material properties to commercial contact lens materials. There was a decrease in light transmission in the shorter wavelengths due to incorporation of the antibiotic, but over 80% light transmission between 400 and 700 nm. Modified materials released for more than 8 hours, significantly longer than unmodified controls (P < 0.05). In vivo, there was no statistically significant difference between the number of colony-forming units (CFU) recovered from corneas treated with eye drops and those treated with one of two modified contact lenses (P > 0.05), which is significantly less than corneas treated with unmodified control lenses or those that received no treatment at all (P < 0.05). These novel contact lenses designed for the extended release of ciprofloxacin may be beneficial to supplement or augment future treatments of sight-threatening microbial keratitis. Copyright 2014 The Association for Research in Vision and Ophthalmology, Inc.

Silicon micromechanical sensors model of piezoresistivity

NASA Astrophysics Data System (ADS)

Lysko, Jan M.

2001-08-01

Application of the piezo resistivity model to estimate valence and conduction bands shifts induced by the mechanical stress is presented. Parameters of the silicon pressure and acceleration sensor, which are under development in the ITE, Warsaw, were used. Geometrical and technological data were used in calculations of the silicon energy band structure and longitudinal coefficient of the piezo resistivity.(pi) L.

What controls deposition rate in electron-beam chemical vapor deposition?

PubMed

White, William B; Rykaczewski, Konrad; Fedorov, Andrei G

2006-08-25

The key physical processes governing electron-beam-assisted chemical vapor deposition are analyzed via a combination of theoretical modeling and supporting experiments. The scaling laws that define growth of the nanoscale deposits are developed and verified using carefully designed experiments of carbon deposition from methane onto a silicon substrate. The results suggest that the chamber-scale continuous transport of the precursor gas is the rate controlling process in electron-beam chemical vapor deposition.

Study on Silicon Microstructure Processing Technology Based on Porous Silicon

NASA Astrophysics Data System (ADS)

Shang, Yingqi; Zhang, Linchao; Qi, Hong; Wu, Yalin; Zhang, Yan; Chen, Jing

2018-03-01

Aiming at the heterogeneity of micro - sealed cavity in silicon microstructure processing technology, the technique of preparing micro - sealed cavity of porous silicon is proposed. The effects of different solutions, different substrate doping concentrations, different current densities, and different etching times on the rate, porosity, thickness and morphology of the prepared porous silicon were studied. The porous silicon was prepared by different process parameters and the prepared porous silicon was tested and analyzed. For the test results, optimize the process parameters and experiments. The experimental results show that the porous silicon can be controlled by optimizing the parameters of the etching solution and the doping concentration of the substrate, and the preparation of porous silicon with different porosity can be realized by different doping concentration, so as to realize the preparation of silicon micro-sealed cavity, to solve the sensor sensitive micro-sealed cavity structure heterogeneous problem, greatly increasing the application of the sensor.

Silicon and Germanium (111) Surface Reconstruction

NASA Astrophysics Data System (ADS)

Hao, You Gong

Silicon (111) surface (7 x 7) reconstruction has been a long standing puzzle. For the last twenty years, various models were put forward to explain this reconstruction, but so far the problem still remains unsolved. Recent ion scattering and channeling (ISC), scanning tunneling microscopy (STM) and transmission electron diffraction (TED) experiments reveal some new results about the surface which greatly help investigators to establish better models. This work proposes a silicon (111) surface reconstruction mechanism, the raising and lowering mechanism which leads to benzene -like ring and flower (raised atom) building units. Based on these building units a (7 x 7) model is proposed, which is capable of explaining the STM and ISC experiment and several others. Furthermore the building units of the model can be used naturally to account for the germanium (111) surface c(2 x 8) reconstruction and other observed structures including (2 x 2), (5 x 5) and (7 x 7) for germanium as well as the (/3 x /3)R30 and (/19 x /19)R23.5 impurity induced structures for silicon, and the higher temperature disordered (1 x 1) structure for silicon. The model is closely related to the silicon (111) surface (2 x 1) reconstruction pi-bonded chain model, which is the most successful model for the reconstruction now. This provides an explanation for the rather low conversion temperature (560K) of the (2 x 1) to the (7 x 7). The model seems to meet some problems in the explanation of the TED result, which is explained very well by the dimer, adatom and stacking fault (DAS) model proposed by Takayanagi. In order to explain the TED result, a variation of the atomic scattering factor is proposed. Comparing the benzene-like ring model with the DAS model, the former needs more work to explain the TED result and the later has to find a way to explain the silicon (111) surface (1 x 1) disorder experiment.

Silicon chemistry in interstellar clouds

NASA Technical Reports Server (NTRS)

Langer, William D.; Glassgold, A. E.

1990-01-01

A new model of interstellar silicon chemistry is presented that explains the lack of SiO detections in cold clouds and contains an exponential temperature dependence for the SiO abundance. A key aspect of the model is the sensitivity of SiO production by neutral silicon reactions to density and temperature, which arises from the dependence of the rate coefficients on the population of the excited fine-structure levels of the silicon atom. As part of the explanation of the lack of SiO detections at low temperatures and densities, the model also emphasizes the small efficiencies of the production routes and the correspondingly long times needed to reach equilibrium. Measurements of the abundance of SiO, in conjunction with theory, can provide information on the physical properties of interstellar clouds such as the abundance of oxygen bearing molecules and the depletion of interstellar silicon.

Active locomotion of a paddling-based capsule endoscope in an in vitro and in vivo experiment (with videos).

PubMed

Kim, Hee Man; Yang, Sungwook; Kim, Jinseok; Park, Semi; Cho, Jae Hee; Park, Jeong Youp; Kim, Tae Song; Yoon, Eui-Sung; Song, Si Young; Bang, Seungmin

2010-08-01

Capsule endoscopy that could actively move and approach a specific site might be more valuable for the diagnosis or treatment of GI diseases. We tested the performance of active locomotion of a novel wired capsule endoscope with a paddling-based locomotion mechanism, using 3 models: a silicone tube, an extracted porcine colon, and a living pig. In vitro, ex vivo, and in vivo experiments in a pig model. Study in an animal laboratory. For the in vitro test, the locomotive capsule was controlled to actively move from one side of a silicone tube to the other by a controller-operated automatic traveling program. The velocity was calculated by following a video recording. We performed ex vivo tests by using an extracted porcine colon in the same manner we performed the in vitro test. In in vivo experiments, the capsule was inserted into the rectum of a living pig under anesthesia, and was controlled to move automatically forward. After 8 consecutive trials, the velocity was calculated. Elapsed time, velocity, and mucosal damage. The locomotive capsule showed stable and active movement inside the lumen both in vitro and ex vivo. The velocity was 60 cm/min in the silicone tube, and 36.8 and 37.5 cm/min in the extracted porcine colon. In the in vivo experiments, the capsule stably moved forward inside the colon of a living pig without any serious complications. The mean velocity was 17 cm/min over 40 cm length. We noted pinpoint erythematous mucosal injuries in the colon. Porcine model experiments, wired capsule endoscope. The novel paddling-based locomotive capsule endoscope performed fast and stable movement in a living pig colon with consistent velocity. Further investigation is necessary for practical use in humans. Copyright 2010 American Society for Gastrointestinal Endoscopy. Published by Mosby, Inc. All rights reserved.

Silicon carbide, an emerging high temperature semiconductor

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.; Powell, J. Anthony

1991-01-01

In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

Continuous coating of silicon-on-ceramic

NASA Technical Reports Server (NTRS)

Heaps, J. D.; Schuldt, S. B.; Grung, B. L.; Zook, J. D.; Butter, C. D.

1980-01-01

Growth of sheet silicon on low-cost substrates has been demonstrated by the silicon coating with inverted meniscus (SCIM) technique. A mullite-based ceramic substrate is coated with carbon and then passed over a trough of molten silicon with a raised meniscus. Solidification occurs at the trailing edge of the downstream meniscus, producing a silicon-on-ceramic (SOC) layer. Meniscus shape and stability are controlled by varying the level of molten silicon in a reservoir connected to the trough. The thermal conditions for growth and the crystallographic texture of the SOC layers are similar to those produced by dip-coating, the original technique of meniscus-controlled growth. The thermal conditions for growth have been analyzed in some detail. The analysis correctly predicts the velocity-thickness relationship and the liquid-solid interface shape for dip-coating, and appears to be equally applicable to SCIM-coating. Solar cells made from dip-coated SOC material have demonstrated efficiencies of 10% on 4-sq cm cells and 9.9% on 10-sq cm cells.

A multiscale simulation technique for molecular electronics: design of a directed self-assembled molecular n-bit shift register memory device.

PubMed

Lambropoulos, Nicholas A; Reimers, Jeffrey R; Crossley, Maxwell J; Hush, Noel S; Silverbrook, Kia

2013-12-20

A general method useful in molecular electronics design is developed that integrates modelling on the nano-scale (using quantum-chemical software) and on the micro-scale (using finite-element methods). It is applied to the design of an n-bit shift register memory that could conceivably be built using accessible technologies. To achieve this, the entire complex structure of the device would be built to atomic precision using feedback-controlled lithography to provide atomic-level control of silicon devices, controlled wet-chemical synthesis of molecular insulating pillars above the silicon, and controlled wet-chemical self-assembly of modular molecular devices to these pillars that connect to external metal electrodes (leads). The shift register consists of n connected cells that read data from an input electrode, pass it sequentially between the cells under the control of two external clock electrodes, and deliver it finally to an output device. The proposed cells are trimeric oligoporphyrin units whose internal states are manipulated to provide functionality, covalently connected to other cells via dipeptide linkages. Signals from the clock electrodes are conveyed by oligoporphyrin molecular wires, and μ-oxo porphyrin insulating columns are used as the supporting pillars. The developed multiscale modelling technique is applied to determine the characteristics of this molecular device, with in particular utilization of the inverted region for molecular electron-transfer processes shown to facilitate latching and control using exceptionally low energy costs per logic operation compared to standard CMOS shift register technology.

A multiscale simulation technique for molecular electronics: design of a directed self-assembled molecular n-bit shift register memory device

NASA Astrophysics Data System (ADS)

Lambropoulos, Nicholas A.; Reimers, Jeffrey R.; Crossley, Maxwell J.; Hush, Noel S.; Silverbrook, Kia

2013-12-01

A general method useful in molecular electronics design is developed that integrates modelling on the nano-scale (using quantum-chemical software) and on the micro-scale (using finite-element methods). It is applied to the design of an n-bit shift register memory that could conceivably be built using accessible technologies. To achieve this, the entire complex structure of the device would be built to atomic precision using feedback-controlled lithography to provide atomic-level control of silicon devices, controlled wet-chemical synthesis of molecular insulating pillars above the silicon, and controlled wet-chemical self-assembly of modular molecular devices to these pillars that connect to external metal electrodes (leads). The shift register consists of n connected cells that read data from an input electrode, pass it sequentially between the cells under the control of two external clock electrodes, and deliver it finally to an output device. The proposed cells are trimeric oligoporphyrin units whose internal states are manipulated to provide functionality, covalently connected to other cells via dipeptide linkages. Signals from the clock electrodes are conveyed by oligoporphyrin molecular wires, and μ-oxo porphyrin insulating columns are used as the supporting pillars. The developed multiscale modelling technique is applied to determine the characteristics of this molecular device, with in particular utilization of the inverted region for molecular electron-transfer processes shown to facilitate latching and control using exceptionally low energy costs per logic operation compared to standard CMOS shift register technology.

[Comparative study of nanosized and microsized silicon dioxide on spermatogenesis function of male rats].

PubMed

Fan, Yi-Ou; Zhang, Ying-Hua; Zhang, Xiao-Peng; Liu, Bing; Ma, Yi-xin; Jin, Yi-he

2006-09-01

To compare the effects of nanosized and microsized silicon dioxide on spermatogenesis function of male rats exposed by inhalation. 45 male rats were randomly divided into control group and four experimental groups which were exposed by 100 mg/m3 or 300 mg/m3 nanosized and microsized silicon dioxide in inhalation chambers 2 hours every other day. Age-matched rats were exposed to room air with the same condition and served as controls. 65 days later, the testicular and epididymal viscera coefficients, the quantity and quality of sperm were examined and the histopathological assessment was done. The changes in biochemical parameters in serum and testes were also measured. Nanosized silicon dioxide could induce histopathological changes of testes in rats, and the effect was higher than that of microsized particles at the same concentration. Nanosized silicon dioxide could reduce the sperm counts of rats and the testicular LDH-C4 activities, increase MDA levels in the testes and the effect was higher than that of microsized particles at the same concentration. Nanosized silicon dioxide could lead to the reduction of sperm motility, testicular LDH-C4 activities and 8-hydroxydeoxyguanosine (8-OHdG) concentration in serum elevation in particles-exposed rats compared with the control animals, but there are no significant difference compared with that of microsized particles at the same concentration. The present findings suggest a different effect of impairment of sperm production and maturation induced by inhalation of nanosized and microsized silicon dioxide, and nanosized silicon dioxide exerted more severe reaction.

Interior phase transformations and mass-radius relationships of silicon-carbon planets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wilson, Hugh F.; Militzer, Burkhard, E-mail: hughfw@gmail.com

2014-09-20

Planets such as 55 Cancri e orbiting stars with a high carbon-to-oxygen ratio may consist primarily of silicon and carbon, with successive layers of carbon, silicon carbide, and iron. The behavior of silicon-carbon materials at the extreme pressures prevalent in planetary interiors, however, has not yet been sufficiently understood. In this work, we use simulations based on density functional theory to determine high-pressure phase transitions in the silicon-carbon system, including the prediction of new stable compounds with Si{sub 2}C and SiC{sub 2} stoichiometry at high pressures. We compute equations of state for these silicon-carbon compounds as a function of pressure,more » and hence derive interior structural models and mass-radius relationships for planets composed of silicon and carbon. Notably, we predict a substantially smaller radius for SiC planets than in previous models, and find that mass radius relationships for SiC planets are indistinguishable from those of silicate planets. We also compute a new equation of state for iron. We rederive interior models for 55 Cancri e and are able to place more stringent restrictions on its composition.« less

Area Reports. Advanced materials and devices research area. Silicon materials research task, and advanced silicon sheet task

NASA Technical Reports Server (NTRS)

1986-01-01

The objectives of the Silicon Materials Task and the Advanced Silicon Sheet Task are to identify the critical technical barriers to low-cost silicon purification and sheet growth that must be overcome to produce a PV cell substrate material at a price consistent with Flat-plate Solar Array (FSA) Project objectives and to overcome these barriers by performing and supporting appropriate R&D. Progress reports are given on silicon refinement using silane, a chemical vapor transport process for purifying metallurgical grade silicon, silicon particle growth research, and modeling of silane pyrolysis in fluidized-bed reactors.

LDEF-space environmental effects on materials: Composites and silicone coatings

NASA Technical Reports Server (NTRS)

Petrie, Brian C.

1992-01-01

The effects of long term low Earth orbit environments on thermal control coatings and organic matrix/fiber reinforced composites are discussed. Two diverse categories are reported here: silicone coatings and composites. For composites physical and structural properties were analyzed; results are reported on mass/dimensional loss, microcracking, short beam shear, coefficient of thermal expansion (CTE), and flexural properties. The changes in thermal control properties, mass, and surface chemistry and morphology are reported and analyzed for the silicone coatings.

LDEF-space environmental effects on materials: Composites and silicone coatings

NASA Technical Reports Server (NTRS)

Petrie, Brian C.

1991-01-01

The objective of the Lockheed experiment is to evaluate the effects of long term low Earth orbit environments on thermal control coatings and organic matrix/fiber reinforced composites. Two diverse categories are reported: silicone coatings and composites. For composites physical and structural properties were analyzed; results are reported on mass/dimensional loss, microcracking, short beam shear, CTE, and flexural properties. The changes in thermal control properties, mass, and surface chemistry and morphology are reported and analyzed for the silicon coatings.

LabVIEW-based control and acquisition system for the dosimetric characterization of a silicon strip detector.

PubMed

Ovejero, M C; Pérez Vega-Leal, A; Gallardo, M I; Espino, J M; Selva, A; Cortés-Giraldo, M A; Arráns, R

2017-02-01

The aim of this work is to present a new data acquisition, control, and analysis software system written in LabVIEW. This system has been designed to obtain the dosimetry of a silicon strip detector in polyethylene. It allows the full automation of the experiments and data analysis required for the dosimetric characterization of silicon detectors. It becomes a useful tool that can be applied in the daily routine check of a beam accelerator.

Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

NASA Technical Reports Server (NTRS)

Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

2001-01-01

A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

NASA Technical Reports Server (NTRS)

Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

2000-01-01

A process for producing polycrystalline silicon carbide includes heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

Study of the Effects of Impurities on the Properties of Silicon Materials and Performance of Silicon Solar Cell

NASA Technical Reports Server (NTRS)

Sah, C. T.

1979-01-01

Numerical solutions were obtained from the exact one dimensional transmission line circuit model to study the following effects on the terrestrial performance of silicon solar cells: interband Auger recombination; surface recombination at the contact interfaces; enhanced metallic impurity solubility; diffusion profiles; and defect-impurity recombination centers. Thermal recombination parameters of titanium impurity in silicon were estimated from recent experimental data. Based on those parameters, computer model calculations showed that titanium concentration must be kept below 6x10 to the 12th power Ti/cu cm in order to achieve 16% AM1 efficiency in a silicon solar cell of 250 micrometers thick and 1.5 ohm-cm resistivity.

Polypropylene vs silicone Ahmed valve with adjunctive mitomycin C in paediatric age group: a prospective controlled study

PubMed Central

El Sayed, Y; Awadein, A

2013-01-01

Purpose To compare the results of silicone and polypropylene Ahmed glaucoma valves (AGV) implanted during the first 10 years of life. Methods A prospective study was performed on 50 eyes of 33 patients with paediatric glaucoma. Eyes were matched to either polypropylene or silicone AGV. In eyes with bilateral glaucoma, one eye was implanted with polypropylene and the other eye was implanted with silicone AGV. Results Fifty eyes of 33 children were reviewed. Twenty five eyes received a polypropylene valve, and 25 eyes received a silicone valve. Eyes implanted with silicone valves achieved a significantly lower intraocular pressure (IOP) compared with the polypropylene group at 6 months, 1 year, and 2 years postoperatively. The average survival time was significantly longer (P=0.001 by the log-rank test) for the silicone group than for the polypropylene group and the cumulative probability of survival by the log-rank test at the end of the second year was 80% (SE: 8.0, 95% confidence interval (CI): 64–96%) in the silicone group and 56% (SE: 9.8, 95% CI: 40–90%) in the polypropylene group. The difference in the number of postoperative interventions and complications between both groups was statistically insignificant. Conclusion Silicone AGVs can achieve better IOP control, and longer survival with less antiglaucoma drops compared with polypropylene valves in children younger than 10 years. PMID:23579403

Reduced adherence of Candida to silane-treated silicone rubber.

PubMed

Price, C L; Williams, D W; Waters, M G J; Coulthwaite, L; Verran, J; Taylor, R L; Stickler, D; Lewis, M A O

2005-07-01

Silicone rubber is widely used in the construction of medical devices that can provide an essential role in the treatment of human illness. However, subsequent microbial colonization of silicone rubber can result in clinical infection or device failure. The objective of this study was to determine the effectiveness of a novel silane-treated silicone rubber in inhibiting microbial adherence and material penetration. Test material was prepared by a combination of argon plasma discharge treatment and fluorinated silane coupling. Chemicophysical changes were then confirmed by X-ray photoelectron spectroscopy, contact-angle measurement, and atomic force microscopy. Two separate adherence assays and a material penetration assay assessed the performance of the new material against four strains of Candida species. Results showed a significant reduction (p < 0.01) of Candida albicans GDH 2346 adherence to silane-treated silicone compared with untreated controls. This reduction was still evident after the incorporation of saliva into the assay. Adherence inhibition also occurred with Candida tropicalis MMU and Candida krusei NCYC, although this was assay dependent. Reduced penetration of silane-treated silicone by Candida was evident when compared to untreated controls, plaster-processed silicone, and acrylic-processed silicone. To summarize, a novel silicone rubber material is described that inhibits both candidal adherence and material penetration. The clinical benefit and performance of this material remains to be determined. Copyright 2005 Wiley Periodicals, Inc.

Continuum modelling of silicon diffusion in indium gallium arsenide

NASA Astrophysics Data System (ADS)

Aldridge, Henry Lee, Jr.

A possible method to overcome the physical limitations experienced by continued transistor scaling and continue improvements in performance and power consumption is integration of III-V semiconductors as alternative channel materials for logic devices. Indium Gallium Arsenide (InGaAs) is such a material from the III-V semiconductor family, which exhibit superior electron mobilities and injection velocities than that of silicon. In order for InGaAs integration to be realized, contact resistances must be minimized through maximizing activation of dopants in this material. Additionally, redistribution of dopants during processing must be clearly understood and ultimately controlled at the nanometer-scale. In this work, the activation and diffusion behavior of silicon, a prominent n-type dopant in InGaAs, has been characterized and subsequently modelled using the Florida Object Oriented Process and Device Simulator (FLOOPS). In contrast to previous reports, silicon exhibits non-negligible diffusion in InGaAs, even for smaller thermal budget rapid thermal anneals (RTAs). Its diffusion is heavily concentration-dependent, with broadening "shoulder-like" profiles when doping levels exceed 1-3x1019cm -3, for both ion-implanted and Molecular Beam Epitaxy (MBE)-grown cases. Likewise a max net-activation value of ˜1.7x1019cm -3 is consistently reached with enough thermal processing, regardless of doping method. In line with experimental results and several ab-initio calculation results, rapid concentration-dependent diffusion of Si in InGaAs and the upper limits of its activation is believed to be governed by cation vacancies that serve as compensating defects in heavily n-type regions of InGaAs. These results are ultimately in line with an amphoteric defect model, where the activation limits of dopants are an intrinsic limitation of the material, rather than governed by individual dopant species or their methods of incorporation. As a result a Fermi level dependent point defect diffusion model and activation limit model were subsequently developed in FLOOPS with outputs in good agreement with experimental results.

Image guided constitutive modeling of the silicone brain phantom

NASA Astrophysics Data System (ADS)

Puzrin, Alexander; Skrinjar, Oskar; Ozan, Cem; Kim, Sihyun; Mukundan, Srinivasan

2005-04-01

The goal of this work is to develop reliable constitutive models of the mechanical behavior of the in-vivo human brain tissue for applications in neurosurgery. We propose to define the mechanical properties of the brain tissue in-vivo, by taking the global MR or CT images of a brain response to ventriculostomy - the relief of the elevated intracranial pressure. 3D image analysis translates these images into displacement fields, which by using inverse analysis allow for the constitutive models of the brain tissue to be developed. We term this approach Image Guided Constitutive Modeling (IGCM). The presented paper demonstrates performance of the IGCM in the controlled environment: on the silicone brain phantoms closely simulating the in-vivo brain geometry, mechanical properties and boundary conditions. The phantom of the left hemisphere of human brain was cast using silicon gel. An inflatable rubber membrane was placed inside the phantom to model the lateral ventricle. The experiments were carried out in a specially designed setup in a CT scanner with submillimeter isotropic voxels. The non-communicative hydrocephalus and ventriculostomy were simulated by consequently inflating and deflating the internal rubber membrane. The obtained images were analyzed to derive displacement fields, meshed, and incorporated into ABAQUS. The subsequent Inverse Finite Element Analysis (based on Levenberg-Marquardt algorithm) allowed for optimization of the parameters of the Mooney-Rivlin non-linear elastic model for the phantom material. The calculated mechanical properties were consistent with those obtained from the element tests, providing justification for the future application of the IGCM to in-vivo brain tissue.

No efficacy for silicone gel sheeting in prevention of abnormal scar formation in children with cancer: a randomized controlled trial.

PubMed

Braam, Katja I; Kooijmans, Esmee C M; van Dulmen-den Broeder, Eline; Veening, Margreet A; Schouten-van Meeteren, Antoinette Y N; Verhaegen, Pauline D H M; Kaspers, Gertjan J L; Niessen, Frank B; Heij, Hugo A

2015-04-01

Placement of a totally implantable venous access device in children with cancer often leads to hypertrophic scars after its removal. This study investigates whether the use of silicone gel sheets has a beneficial effect on scar outcome in children with cancer. In a three-arm randomized controlled trial, the effects of use of silicone gel sheets for 2 and 6 months were assessed and compared with no intervention in children with cancer after removal of the totally implantable venous access device. Silicone gel sheets were first administered 14 days after surgery. The 1-year follow-up included measurements at seven time points. Next to scar size assessment, the modified Vancouver Scar Scale was used to assess scar outcome. Thirty-six children participated. For hypertrophy, no significant differences were found between the two intervention groups and the control group. However, at 1-year follow-up, the 2-month application group showed significantly smaller scars compared with the group receiving silicone gel sheet treatment for 6 months (p = 0.04), but not when compared with the control group (p = 0.22). Longitudinal multilevel analyses could not confirm these findings and showed no significant intervention effects on both outcomes. This study provides no strong evidence to support the use of silicone gel sheets after totally implantable venous access device removal in children with cancer. There seems to be a small benefit for scar width with application for 2 months. However, for hypertrophy, the scar outcome shows no significant difference between the control group and the 2-month and 6-month treatment groups.

FDTD modeling of anisotropic nonlinear optical phenomena in silicon waveguides.

PubMed

Dissanayake, Chethiya M; Premaratne, Malin; Rukhlenko, Ivan D; Agrawal, Govind P

2010-09-27

A deep insight into the inherent anisotropic optical properties of silicon is required to improve the performance of silicon-waveguide-based photonic devices. It may also lead to novel device concepts and substantially extend the capabilities of silicon photonics in the future. In this paper, for the first time to the best of our knowledge, we present a three-dimensional finite-difference time-domain (FDTD) method for modeling optical phenomena in silicon waveguides, which takes into account fully the anisotropy of the third-order electronic and Raman susceptibilities. We show that, under certain realistic conditions that prevent generation of the longitudinal optical field inside the waveguide, this model is considerably simplified and can be represented by a computationally efficient algorithm, suitable for numerical analysis of complex polarization effects. To demonstrate the versatility of our model, we study polarization dependence for several nonlinear effects, including self-phase modulation, cross-phase modulation, and stimulated Raman scattering. Our FDTD model provides a basis for a full-blown numerical simulator that is restricted neither by the single-mode assumption nor by the slowly varying envelope approximation.

Physical and biological evaluations of sintered hydroxyapatite/silicone composite with covalent bonding for a percutaneous implant material.

PubMed

Furuzono, Tsutomu; Wang, Pao-Li; Korematsu, Arata; Miyazaki, Kozo; Oido-Mori, Mari; Kowashi, Yusuke; Ohura, Kiyoshi; Tanaka, Junzo; Kishida, Akio

2003-05-15

A composite (HA/silicone) of hydroxyapatite (HA) microparticles with an average diameter of 2.0 micro m covalently linked to a silicone substrate has been developed, and its physical and biological properties as a percutaneous soft-tissue-compatible material have been evaluated. In tensile property measurement, samples of HA/silicone and the original silicone were similar in tensile strength, ca. 7.8 MPa, and elongation at break, ca. 570%. It was found that chemical surface modification with HA particles presented no mechanical disadvantage. In an adhesive-tape peeling test, scanning electron microscopic (SEM) observation showed that HA particles coupled directly to the substrate were not removed. HA particles may bond strongly with the substrate. In human periodontal ligament fibroblast attachment and proliferation experiments, the number of cells attached to HA/silicone was 14 times greater than that attached to the original silicone after 24 h of incubation. The value on HA/silicone was ca. 80% versus that on a tissue-culture plastic used as a positive control. After 72 h of incubation, the number of cells grown on HA/silicone increased to the level of the positive control. In observation of fluorescence microscopy stained by Hoechst 33342, cells appeared to tightly adhere to HA particles coupled to the silicone sheet due to intact nuclear morphology. Observation of cells by fluorescence dye with rhodamin phalloidin showed an extensive F-actin cytoskeleton on HA/silicone. In a 4-week animal implant test, force required to pull out the HA/silicone sheet was 15 times that of the original silicone. HA-particle coating on silicone with covalent linkage gave the inert surface bioactivity. The HA composite thus effectively prevents germ infection percutaneously. Copyright 2003 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater 65B: 217-226, 2003

LCoS-SLM technology based on Digital Electro-optics Platform and using in dynamic optics for application development

NASA Astrophysics Data System (ADS)

Tsai, Chun-Wei; Wang, Chen; Lyu, Bo-Han; Chu, Chen-Hsien

2017-08-01

Digital Electro-optics Platform is the main concept of Jasper Display Corp. (JDC) to develop various applications. These applications are based on our X-on-Silicon technologies, for example, X-on-Silicon technologies could be used on Liquid Crystal on Silicon (LCoS), Micro Light-Emitting Diode on Silicon (μLEDoS), Organic Light-Emitting Diode on Silicon (OLEDoS), and Cell on Silicon (CELLoS), etc. LCoS technology is applied to Spatial Light Modulator (SLM), Dynamic Optics, Wavelength Selective Switch (WSS), Holographic Display, Microscopy, Bio-tech, 3D Printing and Adaptive Optics, etc. In addition, μLEDoS technology is applied to Augmented Reality (AR), Head Up Display (HUD), Head-mounted Display (HMD), and Wearable Devices. Liquid Crystal on Silicon - Spatial Light Modulator (LCoSSLM) based on JDC's On-Silicon technology for both amplitude and phase modulation, have an expanding role in several optical areas where light control on a pixel-by-pixel basis is critical for optimum system performance. Combination of the advantage of hardware and software, we can establish a "dynamic optics" for the above applications or more. Moreover, through the software operation, we can control the light more flexible and easily as programmable light processor.

Controlling Thermal Gradients During Silicon Web Growth

NASA Technical Reports Server (NTRS)

Duncan, C. S.; Mchugh, J. P.; Skutch, M. E.; Piotrowski, P. A.

1983-01-01

Strategically placed slot helps to control critical thermal gradients in crucible for silicon web growth. Slot thermally isolates feed region of crucible from growth region; region where pellets are added stays hot. Heat absorbed by pellets during melting causes thermal unbalance than upsets growth conditions.

Neuromorphic Silicon Neuron Circuits

PubMed Central

Indiveri, Giacomo; Linares-Barranco, Bernabé; Hamilton, Tara Julia; van Schaik, André; Etienne-Cummings, Ralph; Delbruck, Tobi; Liu, Shih-Chii; Dudek, Piotr; Häfliger, Philipp; Renaud, Sylvie; Schemmel, Johannes; Cauwenberghs, Gert; Arthur, John; Hynna, Kai; Folowosele, Fopefolu; Saighi, Sylvain; Serrano-Gotarredona, Teresa; Wijekoon, Jayawan; Wang, Yingxue; Boahen, Kwabena

2011-01-01

Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain–machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance-based Hodgkin–Huxley models to bi-dimensional generalized adaptive integrate and fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips. PMID:21747754

Wetting Behavior and Reactivity of Molten Silicon with h-BN Substrate at Ultrahigh Temperatures up to 1750 °C

NASA Astrophysics Data System (ADS)

Polkowski, Wojciech; Sobczak, Natalia; Nowak, Rafał; Kudyba, Artur; Bruzda, Grzegorz; Polkowska, Adelajda; Homa, Marta; Turalska, Patrycja; Tangstad, Merete; Safarian, Jafar; Moosavi-Khoonsari, Elmira; Datas, Alejandro

2017-12-01

For a successful implementation of newly proposed silicon-based latent heat thermal energy storage systems, proper ceramic materials that could withstand a contact heating with molten silicon at temperatures much higher than its melting point need to be developed. In this regard, a non-wetting behavior and low reactivity are the main criteria determining the applicability of ceramic as a potential crucible material for long-term ultrahigh temperature contact with molten silicon. In this work, the wetting of hexagonal boron nitride (h-BN) by molten silicon was examined for the first time at temperatures up to 1750 °C. For this purpose, the sessile drop technique combined with contact heating procedure under static argon was used. The reactivity in Si/h-BN system under proposed conditions was evaluated by SEM/EDS examinations of the solidified couple. It was demonstrated that increase in temperature improves wetting, and consequently, non-wetting-to-wetting transition takes place at around 1650 °C. The contact angle of 90° ± 5° is maintained at temperatures up to 1750 °C. The results of structural characterization supported by a thermodynamic modeling indicate that the wetting behavior of the Si/h-BN couple during heating to and cooling from ultrahigh temperature of 1750 °C is mainly controlled by the substrate dissolution/reprecipitation mechanism.

Analysis of Co-Tunneling Current in Fullerene Single-Electron Transistor

NASA Astrophysics Data System (ADS)

KhademHosseini, Vahideh; Dideban, Daryoosh; Ahmadi, MohammadTaghi; Ismail, Razali

2018-05-01

Single-electron transistors (SETs) are nano devices which can be used in low-power electronic systems. They operate based on coulomb blockade effect. This phenomenon controls single-electron tunneling and it switches the current in SET. On the other hand, co-tunneling process increases leakage current, so it reduces main current and reliability of SET. Due to co-tunneling phenomenon, main characteristics of fullerene SET with multiple islands are modelled in this research. Its performance is compared with silicon SET and consequently, research result reports that fullerene SET has lower leakage current and higher reliability than silicon counterpart. Based on the presented model, lower co-tunneling current is achieved by selection of fullerene as SET island material which leads to smaller value of the leakage current. Moreover, island length and the number of islands can affect on co-tunneling and then they tune the current flow in SET.

Interaction of polymer-coated silicon nanocrystals with lipid bilayers and surfactant interfaces

NASA Astrophysics Data System (ADS)

Elbaradei, Ahmed; Brown, Samuel L.; Miller, Joseph B.; May, Sylvio; Hobbie, Erik K.

2016-10-01

We use photoluminescence (PL) microscopy to measure the interaction between polyethylene-glycol-coated (PEGylated) silicon nanocrystals (SiNCs) and two model surfaces: lipid bilayers and surfactant interfaces. By characterizing the photostability, transport, and size-dependent emission of the PEGylated nanocrystal clusters, we demonstrate the retention of red PL suitable for detection and tracking with minimal blueshift after a year in an aqueous environment. The predominant interaction measured for both interfaces is short-range repulsion, consistent with the ideal behavior anticipated for PEGylated phospholipid coatings. However, we also observe unanticipated attractive behavior in a small number of scenarios for both interfaces. We attribute this anomaly to defective PEG coverage on a subset of the clusters, suggesting a possible strategy for enhancing cellular uptake by controlling the homogeneity of the PEG corona. In both scenarios, the shape of the apparent potential is modeled through the free or bound diffusion of the clusters near the confining interface.

Silicon-Based Chemical Motors: An Efficient Pump for Triggering and Guiding Fluid Motion Using Visible Light.

PubMed

Esplandiu, Maria J; Farniya, Ali Afshar; Bachtold, Adrian

2015-11-24

We report a simple yet highly efficient chemical motor that can be controlled with visible light. The motor made from a noble metal and doped silicon acts as a pump, which is driven through a light-activated catalytic reaction process. We show that the actuation is based on electro-osmosis with the electric field generated by chemical reactions at the metal and silicon surfaces, whereas the contribution of diffusio-osmosis to the actuation is negligible. Surprisingly, the pump can be operated using water as fuel. This is possible because of the large ζ-potential of silicon, which makes the electro-osmotic fluid motion sizable even though the electric field generated by the reaction is weak. The electro-hydrodynamic process is greatly amplified with the addition of reactive species, such as hydrogen peroxide, which generates higher electric fields. Another remarkable finding is the tunability of silicon-based pumps. That is, it is possible to control the speed of the fluid with light. We take advantage of this property to manipulate the spatial distribution of colloidal microparticles in the liquid and to pattern colloidal microparticle structures at specific locations on a wafer surface. Silicon-based pumps hold great promise for controlled mass transport in fluids.

Drug delivery via porous silicon: a focused patent review.

PubMed

Kulyavtsev, Paulina A; Spencer, Roxanne P

2017-03-01

Although silicon is more commonly associated with computer chips than with drug delivery, with the discovery that porous silicon is a viable biocompatible material, mesoporous silicon with pores between 2 and 50 nm has been loaded with small molecule and biomolecule therapeutics and safely implanted for controlled release. As porous silicon is readily oxidized, porous silica must also be considered for drug delivery applications. Since 2010, only a limited number of US patents have been granted, primarily for ophthalmologic and immunotherapy applications, in contrast to the growing body of technical literature in this area.

Polarization-Independent Silicon Metadevices for Efficient Optical Wavefront Control.

PubMed

Chong, Katie E; Staude, Isabelle; James, Anthony; Dominguez, Jason; Liu, Sheng; Campione, Salvatore; Subramania, Ganapathi S; Luk, Ting S; Decker, Manuel; Neshev, Dragomir N; Brener, Igal; Kivshar, Yuri S

2015-08-12

We experimentally demonstrate a functional silicon metadevice at telecom wavelengths that can efficiently control the wavefront of optical beams by imprinting a spatially varying transmittance phase independent of the polarization of the incident beam. Near-unity transmittance efficiency and close to 0-2π phase coverage are enabled by utilizing the localized electric and magnetic Mie-type resonances of low-loss silicon nanoparticles tailored to behave as electromagnetically dual-symmetric scatterers. We apply this concept to realize a metadevice that converts a Gaussian beam into a vortex beam. The required spatial distribution of transmittance phases is achieved by a variation of the lattice spacing as a single geometric control parameter.

Synthesis of Silicon Nanoparticles in Inductively Coupled Plasmas

NASA Astrophysics Data System (ADS)

Markosyan, Aram H.; Le Picard, Romain; Girshick, Steven L.; Kushner, Mark J.

2016-09-01

The synthesis of silicon nanoparticles (Si-NPs) is being investigated for their use in photo-emitting electronics, photovoltaics, and biotechnology. The ability to control the size and mono-disperse nature of Si-NPs is important to optimizing these applications. In this paper we discuss results from a computational investigation of Si-NP formation and growth in an inductively coupled plasma (ICP) reactor with the goal of achieving this control. We use a two dimensional numerical model where the algorithms for the kinetics of NP formation are self-consistently coupled with a plasma hydrodynamics simulation. The reactor modeled here resembles a GEC reference cell through which, for the base case, a mixture of Ar/SiH4 = 70/30 flows at 150 sccm at a pressure of 100 mTorr. In continuous wave mode, three coils located on top of the reactor deliver 150 W. The electric plasma potential confines negatively charged particles at the center of the discharge, increasing the residence time of negative NPs, which enables the NPs to potentially grow to large and controllable sizes of many to 100s nm. We discuss methods of controlling NP growth rates by varying the mole fraction and flow rate of SiH4, and using a pulsed plasma by varying the pulse period and duty cycle. Work supported by DOE Office of Fusion Energy Science and National Science Foundation.

An FPGA-Based Silicon Neuronal Network with Selectable Excitability Silicon Neurons

PubMed Central

Li, Jing; Katori, Yuichi; Kohno, Takashi

2012-01-01

This paper presents a digital silicon neuronal network which simulates the nerve system in creatures and has the ability to execute intelligent tasks, such as associative memory. Two essential elements, the mathematical-structure-based digital spiking silicon neuron (DSSN) and the transmitter release based silicon synapse, allow us to tune the excitability of silicon neurons and are computationally efficient for hardware implementation. We adopt mixed pipeline and parallel structure and shift operations to design a sufficient large and complex network without excessive hardware resource cost. The network with 256 full-connected neurons is built on a Digilent Atlys board equipped with a Xilinx Spartan-6 LX45 FPGA. Besides, a memory control block and USB control block are designed to accomplish the task of data communication between the network and the host PC. This paper also describes the mechanism of associative memory performed in the silicon neuronal network. The network is capable of retrieving stored patterns if the inputs contain enough information of them. The retrieving probability increases with the similarity between the input and the stored pattern increasing. Synchronization of neurons is observed when the successful stored pattern retrieval occurs. PMID:23269911

Species-specific characteristics of the biofilm generated in silicone tube: an in vitro study.

PubMed

Kim, Dong Ju; Park, Joo-Hee; Chang, Minwook

2018-04-03

To investigate characteristics of biofilm which is usually found in silicone tube for nasolacrimal duct surgery and can be the root of chronic bacterial infections eventually resulted in surgical failure. To form a biofilm, sterile silicone tube was placed in culture media of Staphylococcus aureus, Corynebacterium matruchotii, Pseudomonas aeruginosa, or Streptococcus pneumonia. Biofilms formed on these silicone tubes were fixed with 95% ethanol and stained with 0.1% crystal violet. After staining, the optical densities of biofilms were measured using spectrophotometer on a weekly basis for 12 weeks. Staphylococcus aureus group and Pseudomonas aeruginosa group formed significantly more amounts of biofilms compared to the control group. The maximum optical densities of the two groups were found on week 3-4 followed by a tendency of decrease afterwards. However, the amounts of biofilms formed in other groups of silicone tubes were not statistically significant from that of the control group. Bacterial species that could form biofilm on silicone tube included Staphylococcus aureus (week 3) and Pseudomonas aeruginosa (Week 4). It is important to first consider that the cause of infection around 1 month after silicone tube intubation can be Staphylococcus aureus and Pseudomonas aeruginosa.

Electrically Conductive and Optically Active Porous Silicon Nanowires

PubMed Central

Qu, Yongquan; Liao, Lei; Li, Yujing; Zhang, Hua; Huang, Yu; Duan, Xiangfeng

2009-01-01

We report the synthesis of vertical silicon nanowire array through a two-step metal-assisted chemical etching of highly doped n-type silicon (100) wafers in a solution of hydrofluoric acid and hydrogen peroxide. The morphology of the as-grown silicon nanowires is tunable from solid nonporous nanowires, nonporous/nanoporous core/shell nanowires, and entirely nanoporous nanowires by controlling the hydrogen peroxide concentration in the etching solution. The porous silicon nanowires retain the single crystalline structure and crystallographic orientation of the starting silicon wafer, and are electrically conductive and optically active with visible photoluminescence. The combination of electronic and optical properties in the porous silicon nanowires may provide a platform for the novel optoelectronic devices for energy harvesting, conversion and biosensing. PMID:19807130

Low cost solar array project 1: Silicon material

NASA Technical Reports Server (NTRS)

Jewett, D. N.; Bates, H. E.; Hill, D. M.

1980-01-01

The low cost production of silicon by deposition of silicon from a hydrogen/chlorosilane mixture is described. Reactor design, reaction vessel support systems (physical support, power control and heaters, and temperature monitoring systems) and operation of the system are reviewed. Testing of four silicon deposition reactors is described, and test data and consequently derived data are given. An 18% conversion of trichlorosilane to silicon was achieved, but average conversion rates were lower than predicted due to incomplete removal of byproduct gases for recycling and silicon oxide/silicon polymer plugging of the gas outlet. Increasing the number of baffles inside the reaction vessel improved the conversion rate. Plans for further design and process improvements to correct the problems encountered are outlined.

Heat exchanger-ingot casting/slicing process, phase 1: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

NASA Technical Reports Server (NTRS)

Schmid, F.; Khattak, C. P.

1977-01-01

A controlled growth, heat-flow and cool-down process is described that yielded silicon with a high degree of single crystallinity. Even when the seed melted out, very large grains formed. Solar cell samples made from cast material yielded conversion efficiency of over 9%. Representative characterizations of grown silicon demonstrated a dislocation density of less than 100/sq cm and a minority carrier diffusion length of 31 micron. The source of silicon carbide in silicon ingots was identified to be from graphite retainers in contact with silica crucibles. Higher growth rates were achieved with the use of a graphite plug at the bottom of the silica crucible.

Thermally controlled coupling of a rolled-up microtube integrated with a waveguide on a silicon electronic-photonic integrated circuit.

PubMed

Zhong, Qiuhang; Tian, Zhaobing; Veerasubramanian, Venkat; Dastjerdi, M Hadi Tavakoli; Mi, Zetian; Plant, David V

2014-05-01

We report on the first experimental demonstration of the thermal control of coupling strength between a rolled-up microtube and a waveguide on a silicon electronic-photonic integrated circuit. The microtubes are fabricated by selectively releasing a coherently strained GaAs/InGaAs heterostructure bilayer. The fabricated microtubes are then integrated with silicon waveguides using an abruptly tapered fiber probe. By tuning the gap between the microtube and the waveguide using localized heaters, the microtube-waveguide evanescent coupling is effectively controlled. With heating, the extinction ratio of a microtube whispering-gallery mode changes over an 18 dB range, while the resonant wavelength remains approximately unchanged. Utilizing this dynamic thermal tuning effect, we realize coupling modulation of the microtube integrated with the silicon waveguide at 2 kHz with a heater voltage swing of 0-6 V.

Flow restrictor silicon membrane microvalve actuated by optically controlled paraffin phase transition

NASA Astrophysics Data System (ADS)

Kolari, K.; Havia, T.; Stuns, I.; Hjort, K.

2014-08-01

Restrictor valves allow proportional control of fluid flow but are rarely integrated in microfluidic systems. In this study, an optically actuated silicon membrane restrictor microvalve is demonstrated. Its actuation is based on the phase transition of paraffin, using a paraffin wax mixed with a suitable concentration of optically absorbing nanographite particles. Backing up the membrane with oil (the melted paraffin) allows for a compliant yet strong contact to the valve seat, which enables handling of high pressures. At flow rates up to 30 µL min-1 and at a pressure of 2 bars, the valve can successfully be closed and control the flow level by restriction. The use of this paraffin composite as an adhesive layer sandwiched between the silicon valve and glass eases fabrication. This type of restrictor valve is best suited for high pressure, low volume flow silicon-based nanofluidic systems.

Pulse generator using transistors and silicon controlled rectifiers produces high current pulses with fast rise and fall times

NASA Technical Reports Server (NTRS)

Woolfson, M. G.

1966-01-01

Electrical pulse generator uses power transistors and silicon controlled rectifiers for producing a high current pulse having fast rise and fall times. At quiescent conditions, the standby power consumption of the circuit is equal to zero.

Automatic Control of Silicon Melt Level

NASA Technical Reports Server (NTRS)

Duncan, C. S.; Stickel, W. B.

1982-01-01

A new circuit, when combined with melt-replenishment system and melt level sensor, offers continuous closed-loop automatic control of melt-level during web growth. Installed on silicon-web furnace, circuit controls melt-level to within 0.1 mm for as long as 8 hours. Circuit affords greater area growth rate and higher web quality, automatic melt-level control also allows semiautomatic growth of web over long periods which can greatly reduce costs.

Silicon Field Effect Transistors as Dual-Use Sensor-Heater Hybrids

PubMed Central

Reddy, Bobby; Elibol, Oguz H.; Nair, Pradeep R.; Dorvel, Brian R.; Butler, Felice; Ahsan, Zahab; Bergstrom, Donald E.; Alam, Muhammad A.; Bashir, Rashid

2011-01-01

We demonstrate the temperature mediated applications of a previously proposed novel localized dielectric heating method on the surface of dual purpose silicon field effect transistor (FET) sensor-heaters and perform modeling and characterization of the underlying mechanisms. The FETs are first shown to operate as electrical sensors via sensitivity to changes in pH in ionic fluids. The same devices are then demonstrated as highly localized heaters via investigation of experimental heating profiles and comparison to simulation results. These results offer further insight into the heating mechanism and help determine the spatial resolution of the technique. Two important biosensor platform applications spanning different temperature ranges are then demonstrated: a localized heat-mediated DNA exchange reaction and a method for dense selective functionalization of probe molecules via the heat catalyzed complete desorption and reattachment of chemical functionalization to the transistor surfaces. Our results show that the use of silicon transistors can be extended beyond electrical switching and field-effect sensing to performing localized temperature controlled chemical reactions on the transistor itself. PMID:21214189

Ballistic phonon transport in holey silicon.

PubMed

Lee, Jaeho; Lim, Jongwoo; Yang, Peidong

2015-05-13

When the size of semiconductors is smaller than the phonon mean free path, phonons can carry heat with no internal scattering. Ballistic phonon transport has received attention for both theoretical and practical aspects because Fourier's law of heat conduction breaks down and the heat dissipation in nanoscale transistors becomes unpredictable in the ballistic regime. While recent experiments demonstrate room-temperature evidence of ballistic phonon transport in various nanomaterials, the thermal conductivity data for silicon in the length scale of 10-100 nm is still not available due to experimental challenges. Here we show ballistic phonon transport prevails in the cross-plane direction of holey silicon from 35 to 200 nm. The thermal conductivity scales linearly with the length (thickness) even though the lateral dimension (neck) is as narrow as 20 nm. We assess the impact of long-wavelength phonons and predict a transition from ballistic to diffusive regime using scaling models. Our results support strong persistence of long-wavelength phonons in nanostructures and are useful for controlling phonon transport for thermoelectrics and potential phononic applications.

Thermoelectric phonon-glass electron-crystal via ion beam patterning of silicon

NASA Astrophysics Data System (ADS)

Zhu, Taishan; Swaminathan-Gopalan, Krishnan; Stephani, Kelly; Ertekin, Elif

2018-05-01

Ion beam irradiation has recently emerged as a versatile approach to functional materials design. We show in this work that patterned defective regions generated by ion beam irradiation of silicon can create a phonon-glass electron-crystal (PGEC), a long-standing goal of thermoelectrics. By controlling the effective diameter of and spacing between the defective regions, molecular dynamics simulations suggest a reduction of the thermal conductivity by a factor of ˜20 is achievable. Boltzmann theory shows that the thermoelectric power factor remains largely intact in the damaged material. To facilitate the Boltzmann theory, we derive an analytical model for electron scattering with cylindrical defective regions based on partial-wave analysis. Together we predict a figure of merit of Z T ≈0.5 or more at room temperature for optimally patterned geometries of these silicon metamaterials. These findings indicate that nanostructuring of patterned defective regions in crystalline materials is a viable approach to realize a PGEC, and ion beam irradiation could be a promising fabrication strategy.

Evaporator Feed Qualification Analysis Of Tank 38H And 43H Samples: January 2010 Through April 2013

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martino, C. J.; Coleman, C. J.

2013-08-21

This report provides the results of analyses that focused on the chemical species that pertain to the sodium aluminosilicate formation potential for archived Tank 38H and 43H subsurface samples from January 2010 through April 2013. Analyses included warm acid strike preparation followed by analysis of silicon, aluminum, and sodium and water dilution preparation followed by analysis for anions. The Tank 43H and 38H supernatant liquid silicon measurements for the January 2010 through April 2013 time period exhibit a slight increasing trend. Over this time period, the silicon concentration in the Tank 43H and Tank 38H samples averaged 179 mg/L andmore » 235 mg/L, respectively. Comparison of Tank 43H sample results from 2005 through April 2013 to the previously developed process control models indicates that the current formation of sodium aluminosilicate in the 2H system is due to the seeded direct precipitation of cancrinite and sodalite.« less

A Heat and Mass Transfer Model of a Silicon Pilot Furnace

NASA Astrophysics Data System (ADS)

Sloman, Benjamin M.; Please, Colin P.; Van Gorder, Robert A.; Valderhaug, Aasgeir M.; Birkeland, Rolf G.; Wegge, Harald

2017-10-01

The most common technological route for metallurgical silicon production is to feed quartz and a carbon source ( e.g., coal, coke, or charcoal) into submerged-arc furnaces, which use electrodes as electrical conductors. We develop a mathematical model of a silicon furnace. A continuum approach is taken, and we derive from first principles the equations governing the time evolution of chemical concentrations, gas partial pressures, velocity, and temperature within a one-dimensional vertical section of a furnace. Numerical simulations are obtained for this model and are shown to compare favorably with experimental results obtained using silicon pilot furnaces. A rising interface is shown to exist at the base of the charge, with motion caused by the heating of the pilot furnace. We find that more reactive carbon reduces the silicon monoxide losses, while reducing the carbon content in the raw material mixture causes greater solid and liquid material to build-up in the charge region, indicative of crust formation (which can be detrimental to the silicon production process). We also comment on how the various findings could be relevant for industrial operations.

3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon

NASA Astrophysics Data System (ADS)

Han, Xue-Feng; Liu, Xin; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Kakimoto, Koichi

2018-02-01

In FZ growth processes, the stability of the free surface is important in the production of single crystal silicon with high quality. To investigate the shape of the free surface in the FZ silicon crystal growth, a 3D numerical model that included gas and liquid phases was developed. In this present study, 3D Young-Laplacian equations have been solved using the Volume of Fluid (VOF) Model. Using this new model, we predicted the 3D shape of the free surface in FZ silicon crystal growth. The effect of magnetic pressure on shape of free surface has been considered. In particular, the free surface of the eccentric growth model, which could not be previously solved using the 2D Young-Laplacian equations, was solved using the VOF model. The calculation results are validated by the experimental results.

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

PubMed Central

König, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements. PMID:28425460

Antifibrotic effect of dexamethasone/alginate-coated silicone sheet in the abraded middle ear mucosa.

PubMed

Jang, Chul Ho; Ahn, Seung Hyun; Kim, Geun Hyung

2016-12-01

Silicone sheet is a material which is commonly used in middle ear surgery to prevent the formation of adhesions between the tympanic membrane and the medial bony wall of the middle ear cavity. However, silicone sheet can induce a tight and hard fibrous capsule in the region of the stapes, and this is particularly common in cases of eustachian tube dysfunction. As a result of the fibrous encapsulation around the silicone sheet, postoperative aeration of the stapes can be interrupted causing poor hearing gain. In this study, we performed an in vitro and in vivo evaluation of the antifibrotic effects of a dexamethasone and alginate (Dx/alginate) coating on silicone sheet. The Dx/alginate-coated silicone sheets were fabricated using a plasma-treatment and coating method. The Dx/alginate-coated silicone sheets effectively limited in vitro fibroblast attachment and proliferation due to the controlled release of Dx, which can be modified by manipulation of the alginate coating. For the in-vivo evaluation, guinea pigs (albino, male, weighing 250g) were divided into two groups, with the control group (n=5) implanted with silicone sheet and the test group (n=5) receiving Dx/alginate-coated silicone sheet. Animals were sacrificed 3 weeks after implantation, and histological analysis was performed using hematoxylin and eosin (H&E) and immunohistochemical staining techniques. Dx/alginate-coated silicone sheets showed marked inhibition of fibrosis in both the in vitro and in vivo studies. Silicone sheet that incorporates a Dx/alginate coating can release Dx and inhibit fibrosis in the middle ear. This material could be utilized in middle ear surgery as a means of preserving proper aeration and hearing gain following ossiculoplasty. Copyright © 2016 Elsevier B.V. All rights reserved.

Silicon materials task of the Low Cost Solar Array Project: Effect of impurities and processing on silicon solar cells

NASA Technical Reports Server (NTRS)

Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Hanes, M. H.; Rai-Choudhury, P.; Mollenkopf, H. C.

1982-01-01

The effects of impurities and processing on the characteristics of silicon and terrestrial silicon solar cells were defined in order to develop cost benefit relationships for the use of cheaper, less pure solar grades of silicon. The amount of concentrations of commonly encountered impurities that can be tolerated in typical p or n base solar cells was established, then a preliminary analytical model from which the cell performance could be projected depending on the kinds and amounts of contaminants in the silicon base material was developed. The impurity data base was expanded to include construction materials, and the impurity performace model was refined to account for additional effects such as base resistivity, grain boundary interactions, thermal processing, synergic behavior, and nonuniform impurity distributions. A preliminary assessment of long term (aging) behavior of impurities was also undertaken.

Composition Comprising Silicon Carbide

NASA Technical Reports Server (NTRS)

Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy L. (Inventor)

2012-01-01

A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

Surface and mechanical analysis of explanted Poly Implant Prosthèse silicone breast implants.

PubMed

Yildirimer, L; Seifalian, A M; Butler, P E

2013-05-01

The recent events surrounding Poly Implant Prosthèse (PIP) breast implants have renewed the debate about the safety profile of silicone implants. The intentional use of industrial-grade instead of certified medical-grade silicone is thought to be responsible for reportedly higher frequencies of implant rupture in vivo. The differences in mechanical and viscoelastic properties between PIP and medical-grade silicone implant shells were investigated. Surface characterization of shells and gels was carried out to determine structural changes occurring after implantation. Breast implants were obtained from women at the Royal Free Hospital (London, UK). PIP implants were compared with medical-grade control silicone implants. Tensile strength, tear resistance and elongation at break were assessed using a tensile tester. Surfaces were analysed using attenuated total reflectance-Fourier transform infrared (ATR-FTIR) spectroscopy. Spearman correlation analyses and Kruskal-Wallis one-way statistical tests were performed for mechanical data. There were 18 PIP and four medical-grade silicone implants. PIP silicone shells had significantly weaker mechanical strength than control shells (P < 0·009). There were negative correlations between mechanical properties of PIP shells and implantation times, indicative of deterioration of PIP shells over time in vivo (r(s) = -0·75, P = 0·009 for tensile strength; r(s) = -0·76, P = 0·001 for maximal strain). Comparison of ATR-FTIR spectra of PIP and control silicones demonstrated changes in material characteristics during the period of implantation suggestive of time-dependent bond breakage and degradation of the material. This study demonstrated an increased weakness of PIP shells with time and therefore supports the argument for prophylactic removal of PIP breast implants. © 2013 British Journal of Surgery Society Ltd. Published by John Wiley & Sons Ltd.

Gamma ray irradiated silicon nanowires: An effective model to investigate defects at the interface of Si/SiOx

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Kui; Zhao, Yi; Liu, Liangbin

2014-01-20

The effect of gamma ray irradiation on silicon nanowires was investigated. Here, an additional defect emerged in the gamma-ray-irradiated silicon nanowires and was confirmed with electron spin resonance spectra. {sup 29}Si nuclear magnetic resonance spectroscopy showed that irradiation doses had influence on the Q{sup 4} unit structure. This phenomenon indicated that the unique core/shell structure of silicon nanowires might contribute to induce metastable defects under gamma ray irradiation, which served as a satisfactory model to investigate defects at the interface of Si/SiOx.

Improving atomic force microscopy imaging by a direct inverse asymmetric PI hysteresis model.

PubMed

Wang, Dong; Yu, Peng; Wang, Feifei; Chan, Ho-Yin; Zhou, Lei; Dong, Zaili; Liu, Lianqing; Li, Wen Jung

2015-02-03

A modified Prandtl-Ishlinskii (PI) model, referred to as a direct inverse asymmetric PI (DIAPI) model in this paper, was implemented to reduce the displacement error between a predicted model and the actual trajectory of a piezoelectric actuator which is commonly found in AFM systems. Due to the nonlinearity of the piezoelectric actuator, the standard symmetric PI model cannot precisely describe the asymmetric motion of the actuator. In order to improve the accuracy of AFM scans, two series of slope parameters were introduced in the PI model to describe both the voltage-increase-loop (trace) and voltage-decrease-loop (retrace). A feedforward controller based on the DIAPI model was implemented to compensate hysteresis. Performance of the DIAPI model and the feedforward controller were validated by scanning micro-lenses and standard silicon grating using a custom-built AFM.

Optimization of micro-fabricated porous membranes for intestinal epithelial cell culture and in vitro modeling of the human intestinal barrier

NASA Astrophysics Data System (ADS)

Nair Gourikutty Sajay, Bhuvanendran; Yin, Chiam Su; Ramadan, Qasem

2017-12-01

In vitro modeling of organs could provide a controlled platform for studying physiological events and has great potential in the field of pharmaceutical development. Here, we describe the characterization of in vitro modeling of the human intestinal barrier mimicked using silicon porous membranes as a substrate. To mimic an intestinal in vivo setup as closely as possible, a porous substrate is required in a dynamic environment for the cells to grow rather than a static setup with an impermeable surface such as a petri dish. In this study, we focus on the detailed characterization of Caco-2 cells cultured on a silicon membrane with different pore sizes as well as the effect of dynamic fluid flow on the model. The porous silicon membrane together with continuous perfusion of liquid applying shear stress on the cells enhances the differentiation of polarized cells by providing access to the both their basal and apical surfaces. Membranes with pore sizes of 0.5-3 µm were used and a shear stress of ~0.03 dyne cm-2 was created by applying a low flow rate of 20 nl s-1. By providing these optimized conditions, cells were able to differentiate with columnar morphology, which developed microvilli structures on their apical side and tight junctions between adjacent cells like those in a healthy human intestinal barrier. In this setup, it is possible to study the important cellular functions of the intestine such as transport, absorption and secretion, and thus this model has great potential in drug screening.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Hong, E-mail: h-yu@seu.edu.cn; Chen, Hong-Bo

In this article, a new semi-continuum model is built to describe the fundamental vibration frequency of the silicon nanowires in <111> orientation. The Keating potential model and the discrete nature in the width and the thickness direction of the silicon nanowires in <111> orientation are applied in the new semi-continuum model. Based on the Keating model and the principle of conservation of energy, the vibration frequency of the silicon nanowires with the triangle, the rhombus, and the hexagon cross sections are derived. It is indicated that the calculation results based on this new model are accordant with the simulation resultsmore » of the software based on molecular dynamics (MD).« less

Asymmetric Die Grows Purer Silicon Ribbon

NASA Technical Reports Server (NTRS)

Kalejs, J. P.; Chalmers, B.; Surek, T.

1983-01-01

Concentration of carbide impurities in silicon ribbon is reduced by growing crystalline ribbon with die one wall higher than other. Height difference controls shape of meniscus at liquid/crystal interface and concentrates silicon carbide impurity near one of broad faces. Opposite face is left with above-average purity. Significantly improves efficiency of solar cells made from ribbon.

Silicon Carbide Integrated Circuit Chip

NASA Image and Video Library

2015-02-17

A multilevel interconnect silicon carbide integrated circuit chip with co-fired ceramic package and circuit board recently developed at the NASA GRC Smart Sensors and Electronics Systems Branch for high temperature applications. High temperature silicon carbide electronics and compatible packaging technologies are elements of instrumentation for aerospace engine control and long term inner-solar planet explorations.

Growing Cobalt Silicide Columns In Silicon

NASA Technical Reports Server (NTRS)

Fathauer, Obert W.

1991-01-01

Codeposition by molecular-beam epitaxy yields variety of structures. Proposed fabrication process produces three-dimensional nanometer-sized structures on silicon wafers. Enables control of dimensions of metal and semiconductor epitaxial layers in three dimensions instead of usual single dimension (perpendicular to the plane of the substrate). Process used to make arrays of highly efficient infrared sensors, high-speed transistors, and quantum wires. For fabrication of electronic devices, both shapes and locations of columns controlled. One possible technique for doing this electron-beam lithography, see "Making Submicron CoSi2 Structures on Silicon Substrates" (NPO-17736).

Silicon nanowire arrays as thermoelectric material for a power microgenerator

NASA Astrophysics Data System (ADS)

Dávila, D.; Tarancón, A.; Fernández-Regúlez, M.; Calaza, C.; Salleras, M.; San Paulo, A.; Fonseca, L.

2011-10-01

A novel design of a silicon-based thermoelectric power microgenerator is presented in this work. Arrays of silicon nanowires, working as thermoelectric material, have been integrated in planar uni-leg thermocouple microstructures to convert waste heat into electrical energy. Homogeneous, uniformly dense, well-oriented and size-controlled arrays of silicon nanowires have been grown by chemical vapor deposition using the vapor-liquid-solid mechanism. Compatibility issues between the nanowire growth method and microfabrication techniques, such as electrical contact patterning, are discussed. Electrical measurements of the nanowire array electrical conductivity and the Seebeck voltage induced by a controlled thermal gradient or under harvesting operation mode have been carried out to demonstrate the feasibility of the microdevice. A resistance of 240 Ω at room temperature was measured for an array of silicon nanowires 10 µm -long, generating a Seebeck voltage of 80 mV under an imposed thermal gradient of 450 °C, whereas only 4.5 mV were generated under a harvesting operation mode. From the results presented, a Seebeck coefficient of about 150-190 µV K-1 was estimated, which corresponds to typical values for bulk silicon.

Human aortic endothelial cell morphology influenced by topography of porous silicon substrates.

PubMed

Formentín, Pilar; Catalán, Úrsula; Fernández-Castillejo, Sara; Alba, Maria; Baranowska, Malgorzata; Solà, Rosa; Pallarès, Josep; Marsal, Lluís F

2015-10-01

Porous silicon has received much attention because of its optical properties and for its usefulness in cell-based biosensing, drug delivery, and tissue engineering applications. Surface properties of the biomaterial are associated with cell adhesion and with proliferation, migration, and differentiation. The present article analyzes the behavior of human aortic endothelial cells in macro- and nanoporous collagen-modified porous silicon samples. On both substrates, cells are well adhered and numerous. Confocal microscopy and scanning electron microscopy were employed to study the effects of porosity on the morphology of the cells. On macroporous silicon, filopodia is not observed but the cell spreads on the surface, increasing the lamellipodia surface which penetrates the macropore. On nanoporous silicon, multiple filopodia were found to branch out from the cell body. These results demonstrate that the pore size plays a key role in controlling the morphology and growth rate of human aortic endothelial cells, and that these forms of silicon can be used to control cell development in tissue engineering as well as in basic cell biology research. © The Author(s) 2015.

Fabrication and stabilization of silicon-based photonic crystals with tuned morphology for multi-band optical filtering

NASA Astrophysics Data System (ADS)

Salem, Mohamed Shaker; Abdelaleem, Asmaa Mohamed; El-Gamal, Abear Abdullah; Amin, Mohamed

2017-01-01

One-dimensional silicon-based photonic crystals are formed by the electrochemical anodization of silicon substrates in hydrofluoric acid-based solution using an appropriate current density profile. In order to create a multi-band optical filter, two fabrication approaches are compared and discussed. The first approach utilizes a current profile composed of a linear combination of sinusoidal current waveforms having different frequencies. The individual frequency of the waveform maps to a characteristic stop band in the reflectance spectrum. The stopbands of the optical filter created by the second approach, on the other hand, are controlled by stacking multiple porous silicon rugate multilayers having different fabrication conditions. The morphology of the resulting optical filters is tuned by controlling the electrolyte composition and the type of the silicon substrate. The reduction of sidelobes arising from the interference in the multilayers is observed by applying an index matching current profile to the anodizing current waveform. In order to stabilize the resulting optical filters against natural oxidation, atomic layer deposition of silicon dioxide on the pore wall is employed.

Edge on Impact Simulations and Experiments

DTIC Science & Technology

2013-09-01

silicon carbide ( SiC ) and aluminum oxynitride (AlON) ceramics are predicted using the Kayenta macroscopic constitutive model. Aspects regarding...damage propagation. 2.1. Silicon Carbide SiC is an opaque ceramic explored by the armor community. It is perhaps the most extensively characterized...the Weibull modulus for SiC . 4.1. Silicon Carbide Figures 3 and 4 compare experimental images with model predictions of EOI of SiC targets at respective

Silicon Nitride Equation of State

NASA Astrophysics Data System (ADS)

Swaminathan, Pazhayannur; Brown, Robert

2015-06-01

This report presents the development a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4) . Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonalβ-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products and then combined with the single component solid models to study the global phase diagram. Sponsored by the NASA Goddard Space Flight Center Living With a Star program office.

High-energy electron-induced damage production at room temperature in aluminum-doped silicon

NASA Technical Reports Server (NTRS)

Corbett, J. W.; Cheng, L. J.; Jaworowski, A.; Karins, J. P.; Lee, Y. H.; Lindstroem, L.; Mooney, P. M.; Oehrlen, G.; Wang, K. L.

1979-01-01

DLTS and EPR measurements are reported on aluminum-doped silicon that was irradiated at room temperature with high-energy electrons. Comparisons are made to comparable experiments on boron-doped silicon. Many of the same defects observed in boron-doped silicon are also observed in aluminum-doped silicon, but several others were not observed, including the aluminum interstitial and aluminum-associated defects. Damage production modeling, including the dependence on aluminum concentration, is presented.

Fabrication of a Silicon Nanowire on a Bulk Substrate by Use of a Plasma Etching and Total Ionizing Dose Effects on a Gate-All-Around Field-Effect Transistor

NASA Technical Reports Server (NTRS)

Moon, Dong-Il; Han, Jin-Woo; Meyyappan, Meyya

2016-01-01

The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.

Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lauer, Kevin, E-mail: klauer@cismst.de; Möller, Christian; Schulze, Dirk

2015-01-15

Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetimemore » in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.« less

Thin Carbon Layers on Nanostructured Silicon-Properties and Applications

NASA Astrophysics Data System (ADS)

Angelescu, Anca; Kleps, Irina; Miu, Mihaela; Simion, Monica; Bragaru, Adina; Petrescu, Stefana; Paduraru, Crina; Raducanu, Aurelia

Thin carbon layers such as silicon carbide (SiC) and diamond like carbon (DLC) layers on silicon, or on nanostructured silicon substrats were obtained by different methods. This paper is a review of our results in the areas of carbon layer microfabrication technologies and their properties related to different microsystem apllications. So, silicon membranes using a-SiC or DLC layers as etching mask, as well as silicon carbide membranes using a combined porous silicon — DLC structure were fabricated for sensor applications. A detailed evaluation of the field emission (FE) properties of these films was done to demonstrate their capability to be used in field emission devices. Carbon thin layers on nanostructured silicon samples were also investigated with respect to the living cell adhesion on these structures. The experiments indicate that the cell attachment on the surface of carbon coatings can be controlled by deposition parameters during the technological process.

Study of boron detection limit using the in-air PIGE set-up at LAMFI-USP

NASA Astrophysics Data System (ADS)

Moro, M. V.; Silva, T. F.; Trindade, G. F.; Added, N.; Tabacniks, M. H.

2014-11-01

The quantification of small amounts of boron in materials is of extreme importance in different areas of materials science. Boron is an important contaminant and also a silicon dopant in the semiconductor industry. Boron is also extensively used in nuclear power plants, either for neutron shielding or for safety control and boron is an essential nutrient for life, either vegetable or animal. The production of silicon solar cells, by refining metallurgical-grade silicon (MG-Si) requires the control and reduction of several silicon contaminants to very low concentration levels. Boron is one of the contaminants of solar-grade silicon (SG-Si) that must be controlled and quantified at sub-ppm levels. In the metallurgical purification, boron quantification is usually made by Inductive Coupled Plasma Mass Spectrometry, (ICP-MS) but the results need to be verified by an independent analytical method. In this work we present the results of the analysis of silicon samples by Particle Induced Gamma-Ray Emission (PIGE) aiming the quantification of low concentrations of boron. PIGE analysis was carried out using the in-air external beam line of the Laboratory for Materials Analysis with Ion Beans (LAMFI-USP) by the 10B ( p ,αγ(7Be nuclear reaction, and measuring the 429 keV γ-ray. The in-air PIGE measurements at LAMFI have a quantification limit of the order of 1016 at/cm2.

A design-centered approach in developing Al-Si-based light-weight alloys with enhanced fatigue life and strength

NASA Astrophysics Data System (ADS)

Fan, Jinghong; Hao, Su

2004-01-01

Material heterogeneities and discontinuities such as porosity, second phase particles, and other defects at meso/micro/nano scales, determine fatigue life, strength, and fracture behavior of aluminum castings. In order to achieve better performance of these alloys, a design-centered computer-aided renovative approach is proposed. Here, the term “design-centered” is used to distinguish the new approach from the traditional trial-and-error design approach by formulating a clear objective, offering a scientific foundation, and developing a computer-aided effective tool for the alloy development. A criterion for tailoring “child” microstructure, obtained by “parent” microstructure through statistical correlation, is proposed for the fatigue design at the initial stage. A dislocations pileup model has been developed. This dislocation model, combined with an optimization analysis, provides an analytical-based solution on a small scale for silicon particles and dendrite cells to enhance both fatigue performance and strength for pore-controlled castings. It can also be used to further tailor microstructures. In addition, a conceptual damage sensitivity map for fatigue life design is proposed. In this map there are critical pore sizes, above which fatigue life is controlled by pores; otherwise it is controlled by other mechanisms such as silicon particles and dendrite cells. In the latter case, the proposed criteria and the dislocation model are the foundations of a guideline in the design-centered approach to maximize both the fatigue life and strength of Al-Si-based light-weight alloy.

High-stroke silicon-on-insulator MEMS nanopositioner: Control design for non-raster scan atomic force microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maroufi, Mohammad, E-mail: Mohammad.Maroufi@uon.edu.au; Fowler, Anthony G., E-mail: Anthony.Fowler@uon.edu.au; Bazaei, Ali, E-mail: Ali.Bazaei@newcastle.edu.au

A 2-degree of freedom microelectromechanical systems nanopositioner designed for on-chip atomic force microscopy (AFM) is presented. The device is fabricated using a silicon-on-insulator-based process and is designed as a parallel kinematic mechanism. It contains a central scan table and two sets of electrostatic comb actuators along each orthogonal axis, which provides displacement ranges greater than ±10 μm. The first in-plane resonance modes are located at 1274 Hz and 1286 Hz for the X and Y axes, respectively. To measure lateral displacements of the stage, electrothermal position sensors are incorporated in the design. To facilitate high-speed scans, the highly resonant dynamics ofmore » the system are controlled using damping loops in conjunction with internal model controllers that enable accurate tracking of fast sinusoidal set-points. To cancel the effect of sensor drift on controlled displacements, washout controllers are used in the damping loops. The feedback controlled nanopositioner is successfully used to perform several AFM scans in contact mode via a Lissajous scan method with a large scan area of 20 μm × 20 μm. The maximum scan rate demonstrated is 1 kHz.« less

Starting Silicon-Ribbon Growth Automatically

NASA Technical Reports Server (NTRS)

Mchugh, J. P.

1984-01-01

Semiautomatic system starts growth of silicon sheets more reliably than system with purely manual control. Control signals for starting sheetcrystal growth consist of ramps (during which signal changes linearly from one value to another over preset time interval) and soaks (during which signal remains constant). Ramps and soaks for best temperature and pulling speed determined by experimentation.

Thermodynamics of Volatile Species in the Silicon-Oxygen-Hydrogen System Studied

NASA Technical Reports Server (NTRS)

Jacobson, Nathan S.; Opila, Elizabeth J.; Copland, Evan H.; Myers, Dwight

2005-01-01

The volatilization of silica (SiO2) to silicon hydroxides and oxyhydroxides because of reaction with water vapor is important in a variety of high-temperature corrosion processes. For example, the lifetimes of silicon carbide (SiC) and silicon nitride (Si3N4) - based components in combustion environments are limited by silica volatility. To understand and model this process, it is essential to have accurate thermodynamic data for the formation of volatile silicon hydroxides and oxyhydroxides.

Comparative effect of topical silicone gel and topical tretinoin cream for the prevention of hypertrophic scar and keloid formation and the improvement of scars.

PubMed

Kwon, S Y; Park, S D; Park, K

2014-08-01

Numerous modalities have been used to treat keloids and hypertrophic scars; however, optimal treatment has not yet been established. Therefore, prevention is the mainstay. Recently, silicone gel and tretinoin cream have been shown to be useful for the prevention of hypertrophic scars and keloids. However, there has been no comparative study of the two topical agents thus far. To determine and compare the effectiveness of silicone gel and tretinoin cream for the prevention of hypertrophic scars and keloids resulting from postoperative wounds and for scar improvement. This study included 26 patients with 44 different wounds. The postoperative wounds were divided into two treatment groups and one control group. The patients in the first and second treatment group applied silicone gel and tretinoin cream, respectively, twice a day on their wounds after their stitches were removed. In contrast, the control group patients did not apply anything. We used the Modified Vancouver Scar Scale to quantitatively examine the effectiveness of silicone gel and tretinoin cream just after stitches removal, and at 4, 8, 12 and 24 weeks after removal of the stitches. The silicone gel and tretinoin cream effectively prevented hypertrophic scars and keloids and improved scar effects in the two treatment groups compared with those in the control group. However, no significant difference was noted between the two treatment groups. To prevent hypertrophic scars and keloids and improve scars after surgery, application of a silicone gel or a tretinoin cream to the wounds is needed. © 2013 European Academy of Dermatology and Venereology.

A III-V nanowire channel on silicon for high-performance vertical transistors.

PubMed

Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi

2012-08-09

Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III-V materials, specifically InGaAs, are being explored as alternative fast channels on silicon because of their high electron mobility and high-quality interface with gate dielectrics. The idea of surrounding-gate transistors, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core-multishell nanowires as channels. Surrounding-gate transistors using core-multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

Effect of Silicon on the Desulfurization of Al-Killed Steels: Part II. Experimental Results and Plant Trials

NASA Astrophysics Data System (ADS)

Roy, Debdutta; Pistorius, Petrus Christiaan; Fruehan, Richard J.

2013-10-01

Recent observations suggest that increased silicon levels improve ladle desulfurization of aluminum-killed steel. A kinetic model was developed and presented in part I of this paper, demonstrating that increased silicon levels in steel suppress the consumption of aluminum by parasitic reactions like silica reduction and FeO/MnO reduction, thus making more aluminum available at the interface for desulfurization. The results are increases in the rate and the extent of desulfurization. Predictions were compared with laboratory induction furnace melts using 1 kg of steel and 0.1 kg slag. The experimental results demonstrate the beneficial effect of silicon on the desulfurization reaction and that alumina can be reduced out of the slag and aluminum picked up by the steel, if the silicon content in the steel is high enough. The experimental results are in close agreement with the model predictions. Plant trials also show that with increased silicon content, both the rate and extent of desulfurization increase; incorporating silicon early into the ladle desulfurization process leads to considerable savings in aluminum consumption.

First-principles simulation on Seebeck coefficient in silicon nanowires

NASA Astrophysics Data System (ADS)

Nakamura, Koichi

2017-06-01

The Seebeck coefficients of silicon nanowires (SiNWs) were simulated on the basis of first-principles calculation using various atomistic structure models. The electronic band structures of fully hydrogen-terminated SiNW models give the correct image of quantum mechanical confinement from bulk silicon to SiNW for each axial direction, and the change in the density of states by dimensional reduction to SiNW enhances the thermoelectric performance in terms of the Seebeck coefficient, compared with those of bulk silicon and silicon nanosheets. The uniaxial tensile strain for the SiNW models does not strongly affect the Seebeck coefficient even for the SiNW system with giant piezoresistivity. In contrast, dangling bonds on a wire wall sharply reduce the Seebeck coefficient of SiNW and totally degrade thermoelectric performance from the viewpoint of the power factor. The exclusion of dangling bonds is a key element for the design and application of high-performance thermoelectric nanowires of semiconducting materials.

Silicone antitranspirant increases susceptibility of eastern white pine to the white pine weevil

Treesearch

Ronald C. Wilkinson

1975-01-01

Spraying 16-year-old eastern white pine (Pinus strobus L.) growing in a geographic seed-source test plantation with 10-percent silicone antitranspirant emulsion effectively increased internal water balance during the growing season when compared to control trees of the same seed sources that received no treatment. Extreme silicone toxicity was...

Analysis of stress-strain relationships in silicon ribbon

NASA Technical Reports Server (NTRS)

Dillon, O. W., Jr.

1984-01-01

An analysis of stress-strain relationships in silicon ribbon is presented. A model to present entire process, dynamical Transit Analysis is developed. It is found that knowledge of past-strain history is significant in modeling activities.

Production of electronic grade lunar silicon by disproportionation of silicon difluoride

NASA Technical Reports Server (NTRS)

Agosto, William N.

1993-01-01

Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

Development of a Model and Computer Code to Describe Solar Grade Silicon Production Processes

NASA Technical Reports Server (NTRS)

Srivastava, R.; Gould, R. K.

1979-01-01

Mathematical models and computer codes based on these models, which allow prediction of the product distribution in chemical reactors for converting gaseous silicon compounds to condensed-phase silicon were developed. The following tasks were accomplished: (1) formulation of a model for silicon vapor separation/collection from the developing turbulent flow stream within reactors of the Westinghouse (2) modification of an available general parabolic code to achieve solutions to the governing partial differential equations (boundary layer type) which describe migration of the vapor to the reactor walls, (3) a parametric study using the boundary layer code to optimize the performance characteristics of the Westinghouse reactor, (4) calculations relating to the collection efficiency of the new AeroChem reactor, and (5) final testing of the modified LAPP code for use as a method of predicting Si(1) droplet sizes in these reactors.

The immediate use of a silicone sheet wound closure device in scar reduction and prevention.

PubMed

Parry, James R; Stupak, Howard D; Johnson, Calvin M

2016-02-01

Silicone has been used successfully postoperatively in the prevention of hypertrophic and other types of adverse scars. The Silicone Suture Plate (SSP) is a new, minimally invasive, sterile wound closure device that is applied intraoperatively to prevent adverse scarring. The SSP device permits immediate application of silicone while concurrently allowing for wound-edge tension redistribution. In this prospective, controlled, single-blinded clinical study, 8 consecutive patients undergoing deep-plane rhytidectomy were selected. SSP devices were placed on the patients' posterior rhytidectomy hairline incision; the mirror-image control site underwent standard suturing techniques. Three blinded, independent raters assessed the treatment and control sides at 6-week and 4-month follow-up visits, using the Objective Scar Assessment Scale (OSAS), a validated scar assessment tool. The 6-week OSAS scores revealed an 18.4% improvement on the side with the SSP device (13.3) when compared to the control side (16.3). The 4-month OSAS scores showed a 27.3% improvement on the treatment side from 12.7 (control) to 9.2 (SSP). These OSAS results were found to be statistically significant when taken as an aggregate of the observers' scores, but not when observers' scores were measured individually (p < 0.05). In our series of patients, we showed promising results with the use of the SSP device. Early silicone application and tissue tension distribution contributed to an overall more aesthetically pleasing scar compared to those seen with standard suturing techniques, although more testing is required.

Silicone nanoparticles do not induce immune responses by naïve human peripheral blood mononuclear cells: implications in breast implants.

PubMed

Nair, Narayanan; Pilakka-Kanthikeel, Sudheesh; Saiyed, Zainulabedin; Yndart, Adriana; Nair, Madhavan

2012-07-01

Several studies have reported adverse immunological effects of silicone due to their ability to induce proinflammatory molecules, such as tumor necrosis factor-α (TNF-α) and interleukin-6 (IL-6). In recent years, use of nanoparticles has been under fast development for therapeutic drug targeting, diagnostic imaging, and immune response in various fields of nanomedicine. The authors hypothesize that immune responses induced by in vivo use of silicone materials can be reduced or eliminated by the use of nanosilicone. Peripheral blood mononuclear cells obtained from naïve normal subjects were cultured with different concentrations of silicone nanoparticles and microparticles for 24 hours. The culture supernatants were quantitated for TNF-α, IL-6, and interferon-γ (IFN-γ) secretion by enzyme-linked immunosorbent assay. The pellets were used for specific IL-6, TNF-α, and IFN-γ gene expression by real-time polymerase chain reaction, respectively. Cytotoxicity was evaluated by XTT viability assay. Results were compared between silicone nanoparticles and microparticles and untreated controls. Silicone nanoparticles up to 100 μg/ml did not induce any detectable levels of specific TNF-α, IFN-γ, and IL-6 gene expression and protein production and the results were comparable to those for untreated controls. Silicone microparticles at 100 μg/ml, however, significantly induced the production and gene expression of TNF-α, IL-6, and IFN-γ by peripheral blood mononuclear cells. XTT viability assay showed that silicone nanoparticles or microparticles, even at the highest concentration used, were not cytotoxic to cells. The results suggest that silicone nanoparticles can be engineered to avoid immune recognition and subsequent silicone microparticle-related adverse effects and thus may be of therapeutic significance in the cosmetic industry, plastic surgery, and aesthetic medicine.

First-principles calculations reveal controlling principles for carrier mobilities in semiconductors

DOE PAGES

Wu, Yu -Ning; Zhang, Xiaoguang; Pantelides, Sokrates T.; ...

2016-10-11

It has long been believed that carrier mobilities in semiconductors can be calculated by Fermi s golden rule (Born approximation). Phenomenological models for scattering amplitudes are typically used for engineering- level device modeling. Here we introduce a parameter-free, first-principles approach based on complex- wavevector energy bands that does not invoke the Born approximation. We show that phonon-limited mobility is controlled by low-resistivity percolation paths and that in ionized-impurity scattering one must account for the effect of the screening charge, which cancels most of the Coulomb tail.Finally, calculated electron mobilities in silicon are in agreement with experimental data.

Novel duplex vapor-electrochemical method for silicon solar cells

NASA Technical Reports Server (NTRS)

Kapur, V. K.; Nanis, L.; Sanjurjo, A.

1977-01-01

Silicon was produced by alternate pulse feeding of the reactants SiF4 gas and liquid sodium. The average temperature in the reactor could be controlled, by regulating the amount of reactant in each pulse. Silicon tetrafluoride gas was analyzed by mass spectrometry to determine the nature and amount of contained volatile impurities which included silicon oxyfluorides, sulfur oxyfluorides, and sulfur dioxide. Sodium metal was analyzed by emission spectrography, and it was found to contain only calcium and copper as impurities.

Flat-plate solar array project: Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process

NASA Technical Reports Server (NTRS)

1983-01-01

The process technology for the manufacture of semiconductor-grade silicon in a large commercial plant by 1986, at a price less than $14 per kilogram of silicon based on 1975 dollars is discussed. The engineering design, installation, checkout, and operation of an Experimental Process System Development unit was discussed. Quality control of scaling-up the process and an economic analysis of product and production costs are discussed.

Control of carbon balance in a silicon smelting furnace

DOEpatents

Dosaj, Vishu D.; Haines, Cathryn M.; May, James B.; Oleson, John D.

1992-12-29

The present invention is a process for the carbothermic reduction of silicon dioxide to form elemental silicon. Carbon balance of the process is assessed by measuring the amount of carbon monoxide evolved in offgas exiting the furnace. A ratio of the amount of carbon monoxide evolved and the amount of silicon dioxide added to the furnace is determined. Based on this ratio, the carbon balance of the furnace can be determined and carbon feed can be adjusted to maintain the furnace in carbon balance.

Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

NASA Technical Reports Server (NTRS)

Reck, Theodore (Inventor); Perez, Jose Vicente Siles (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Jung-Kubiak, Cecile (Inventor); Mehdi, Imran (Inventor); Chattopadhyay, Goutam (Inventor); Lin, Robert H. (Inventor); Peralta, Alejandro (Inventor)

2016-01-01

A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

The importance of surface recombination and energy-bandgap narrowing in p-n-junction silicon solar cells

NASA Technical Reports Server (NTRS)

Fossum, J. G.; Lindholm, F. A.; Shibib, M. A.

1979-01-01

Experimental data demonstrating the sensitivity of open-circuit voltage to front-surface conditions are presented for a variety of p-n-junction silicon solar cells. Analytical models accounting for the data are defined and supported by additional experiments. The models and the data imply that a) surface recombination significantly limits the open-circuit voltage (and the short-circuit current) of typical silicon cells, and b) energy-bandgap narrowing is important in the manifestation of these limitations. The models suggest modifications in both the structural design and the fabrication processing of the cells that would result in substantial improvements in cell performance. The benefits of one such modification - the addition of a thin thermal silicon-dioxide layer on the front surface - are indicated experimentally.

Low frequency acoustic properties of a honeycomb-silicone rubber acoustic metamaterial

NASA Astrophysics Data System (ADS)

Gao, Nansha; Hou, Hong

2017-04-01

In order to overcome the influence of mass law on traditional acoustic materials and obtain a lightweight thin-layer structure which can effectively isolate the low frequency noises, a honeycomb-silicone rubber acoustic metamaterial was proposed. Experimental results show that the sound transmission loss (STL) of acoustic metamaterial in this paper is greatly higher than that of monolayer silicone rubber metamaterial. Based on the band structure, modal shapes, as well as the sound transmission simulation, the sound insulation mechanism of the designed honeycomb-silicone rubber structure was analyzed from a new perspective, which had been validated experimentally. Side length of honeycomb structure and thickness of the unit structure would affect STL in damping control zone. Relevant conclusions and design method provide a new concept for engineering noise control.

Design of model experiments for melt flow and solidification in a square container under time-dependent magnetic fields

NASA Astrophysics Data System (ADS)

Meier, D.; Lukin, G.; Thieme, N.; Bönisch, P.; Dadzis, K.; Büttner, L.; Pätzold, O.; Czarske, J.; Stelter, M.

2017-03-01

This paper describes novel equipment for model experiments designed for detailed studies on electromagnetically driven flows as well as solidification and melting processes with low-melting metals in a square-based container. Such model experiments are relevant for a validation of numerical flow simulation, in particular in the field of directional solidification of multi-crystalline photovoltaic silicon ingots. The equipment includes two square-shaped electromagnetic coils and a melt container with a base of 220×220 mm2 and thermostat-controlled heat exchangers at top and bottom. A system for dual-plane, spatial- and time-resolved flow measurements as well as for in-situ tracking of the solid-liquid interface is developed on the basis of the ultrasound Doppler velocimetry. The parameters of the model experiment are chosen to meet the scaling laws for a transfer of experimental results to real silicon growth processes. The eutectic GaInSn alloy and elemental gallium with melting points of 10.5 °C and 29.8 °C, respectively, are used as model substances. Results of experiments for testing the equipment are presented and discussed.

Is actinometry reliable for monitoring Si and silicone halides produced in silicon etching plasmas? A comparison with their absolute densities measured by UV broad band absorption

NASA Astrophysics Data System (ADS)

Kogelschatz, M.; Cunge, G.; Sadeghi, N.

2006-03-01

SiCl{x} radicals, the silicon etching by-products, are playing a major role in silicon gate etching processes because their redeposition on the wafer leads to the formation of a SiOCl{x} passivation layer on the feature sidewalls, which controls the final shape of the etching profile. These radicals are also the precursors to the formation of a similar layer on the reactor walls, leading to process drifts. As a result, the understanding and modelling of these processes rely on the knowledge of their densities in the plasma. Actinometry technique, based on optical emission, is often used to measure relative variations of the density of the above mentioned radicals, even if it is well known that the results obtained with this technique might not always be reliable. To determine the validity domain of actinometry in industrial silicon-etching high density plasmas, we measure the RF source power and pressure dependences of the absolute densities of SiCl{x} (x=0{-}2), SiF and SiBr radicals, deduced from UV broad band absorption spectroscopy. These results are compared to the evolution of the corresponding actinometry signals from these radicals. It is shown that actinometry predicts the global trends of the species density variations when the RF power is changed at constant pressure (that is to say when only the electron density changes) but it completely fails if the gas pressure, hence the electron temperature, changes.

An anisotropic thermal-stress model for through-silicon via

NASA Astrophysics Data System (ADS)

Liu, Song; Shan, Guangbao

2018-02-01

A two-dimensional thermal-stress model of through-silicon via (TSV) is proposed considering the anisotropic elastic property of the silicon substrate. By using the complex variable approach, the distribution of thermal-stress in the substrate can be characterized more accurately. TCAD 3-D simulations are used to verify the model accuracy and well agree with analytical results (< ±5%). The proposed thermal-stress model can be integrated into stress-driven design flow for 3-D IC , leading to the more accurate timing analysis considering the thermal-stress effect. Project supported by the Aerospace Advanced Manufacturing Technology Research Joint Fund (No. U1537208).

Surface plasmons based terahertz modulator consisting of silicon-air-metal-dielectric-metal layers

NASA Astrophysics Data System (ADS)

Wang, Wei; Yang, Dongxiao; Qian, Zhenhai

2018-05-01

An optically controlled modulator of the terahertz wave, which is composed of a metal-dielectric-metal structure etched with circular loop arrays on both the metal layers and a photoexcited silicon wafer separated by an air layer, is proposed. Simulation results based on experimentally measured complex permittivities predict that modification of complex permittivity of the silicon wafer through excitation laser leads to a significant tuning of transmission characteristics of the modulator, forming the modulation depths of 59.62% and 96.64% based on localized surface plasmon peak and propagating surface plasmon peak, respectively. The influences of the complex permittivity of the silicon wafer and the thicknesses of both the air layer and the silicon wafer are numerically studied for better understanding the modulation mechanism. This study proposes a feasible methodology to design an optically controlled terahertz modulator with large modulation depth, high speed and suitable insertion loss, which is useful for terahertz applications in the future.

Effects of silicone gel on burn scars.

PubMed

Momeni, Mahnoush; Hafezi, Farhad; Rahbar, Hossein; Karimi, Hamid

2009-02-01

To study the efficacy of silicone gel applied to hypertrophic burn scars, in reducing scar interference with normal function and improving cosmesis. A randomised, double-blind, placebo-controlled trial involving 38 people with hypertrophic burn scars. Each scar was divided into two segments; silicone gel sheet was applied randomly to one of the two and placebo to the other. Participants were seen again after 1 and 4 months. Their data and wound characteristics were collected using the Vancouver scar scale. The median age of participants was 22 years (1.5-60 years) and 16 were male; 4 did not attend follow-up and were excluded from the study. There were no significant differences in baseline characteristics. Although after 1 month all scar scale measures were lower in treated areas, only the vascularity scale was significantly different between the two areas. After 4 months, all scale measures were significantly lower in the silicone gel group than in the control group, except for the pain score. Silicone gel is an effective treatment for hypertrophic burn scars.

Temperature-Dependent Nanofabrication on Silicon by Friction-Induced Selective Etching.

PubMed

Jin, Chenning; Yu, Bingjun; Xiao, Chen; Chen, Lei; Qian, Linmao

2016-12-01

Friction-induced selective etching provides a convenient and practical way for fabricating protrusive nanostructures. A further understanding of this method is very important for establishing a controllable nanofabrication process. In this study, the effect of etching temperature on the formation of protrusive hillocks and surface properties of the etched silicon surface was investigated. It is found that the height of the hillock produced by selective etching increases with the etching temperature before the collapse of the hillock. The temperature-dependent selective etching rate can be fitted well by the Arrhenius equation. The etching at higher temperature can cause rougher silicon surface with a little lower elastic modulus and hardness. The contact angle of the etched silicon surface decreases with the etching temperature. It is also noted that no obvious contamination can be detected on silicon surface after etching at different temperatures. As a result, the optimized condition for the selective etching was addressed. The present study provides a new insight into the control and application of friction-induced selective nanofabrication.

Formation mechanism of a silicon carbide coating for a reinforced carbon-carbon composite

NASA Technical Reports Server (NTRS)

Rogers, D. C.; Shuford, D. M.; Mueller, J. I.

1975-01-01

Results are presented for a study to determine the mechanisms involved in a high-temperature pack cementation process which provides a silicon carbide coating on a carbon-carbon composite. The process and materials used are physically and chemically analyzed. Possible reactions are evaluated using the results of these analytical data. The coating is believed to develop in two stages. The first is a liquid controlled phase process in which silicon carbide is formed due to reactions between molten silicon metal and the carbon. The second stage is a vapor transport controlled reaction in which silicon vapors react with the carbon. There is very little volume change associated with the coating process. The original thickness changes by less than 0.7%. This indicates that the coating process is one of reactive penetration. The coating thickness can be increased or decreased by varying the furnace cycle process time and/or temperature to provide a wide range of coating thicknesses.

Composite silicon nanostructure arrays fabricated on optical fibre by chemical etching of multicrystal silicon film.

PubMed

Zuo, Zewen; Zhu, Kai; Ning, Lixin; Cui, Guanglei; Qu, Jun; Huang, Wanxia; Shi, Yi; Liu, Hong

2015-04-17

Integrating nanostructures onto optical fibers presents a promising strategy for developing new-fashioned devices and extending the scope of nanodevices' applications. Here we report the first fabrication of a composite silicon nanostructure on an optical fiber. Through direct chemical etching using an H2O2/HF solution, multicrystal silicon films with columnar microstructures are etched into a vertically aligned, inverted-cone-like nanorod array embedded in a nanocone array. A faster dissolution rate of the silicon at the void-rich boundary regions between the columns is found to be responsible for the separation of the columns, and thus the formation of the nanostructure array. The morphology of the nanorods primarily depends on the microstructure of the columns in the film. Through controlling the microstructure of the as-grown film and the etching parameters, the structural control of the nanostructure is promising. This fabrication method can be extended to a larger length scale, and it even allows roll-to-roll processing.

RF sputtering for controlling dihydride and monohydride bond densities in amorphous silicon hydride

DOEpatents

Jeffery, F.R.; Shanks, H.R.

1980-08-26

A process is described for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicone produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous solicone hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

Silicon Web Process Development. [for solar cell fabrication

NASA Technical Reports Server (NTRS)

Duncan, C. S.; Seidensticker, R. G.; Hopkins, R. H.; Mchugh, J. P.; Hill, F. E.; Heimlich, M. E.; Driggers, J. M.

1979-01-01

Silicon dendritic web, ribbon form of silicon and capable of fabrication into solar cells with greater than 15% AMl conversion efficiency, was produced from the melt without die shaping. Improvements were made both in the width of the web ribbons grown and in the techniques to replenish the liquid silicon as it is transformed to web. Through means of improved thermal shielding stress was reduced sufficiently so that web crystals nearly 4.5 cm wide were grown. The development of two subsystems, a silicon feeder and a melt level sensor, necessary to achieve an operational melt replenishment system, is described. A gas flow management technique is discussed and a laser reflection method to sense and control the melt level as silicon is replenished is examined.

The Effect of Postmastectomy Radiation Therapy on Breast Implants: Material Analysis on Silicone and Polyurethane Prosthesis.

PubMed

Lo Torto, Federico; Relucenti, Michela; Familiari, Giuseppe; Vaia, Nicola; Casella, Donato; Matassa, Roberto; Miglietta, Selenia; Marinozzi, Franco; Bini, Fabiano; Fratoddi, Ilaria; Sciubba, Fabio; Cassese, Raffaele; Tombolini, Vincenzo; Ribuffo, Diego

2018-05-17

The pathogenic mechanism underlying capsular contracture is still unknown. It is certainly a multifactorial process, resulting from human body reaction, biofilm activation, bacteremic seeding, or silicone exposure. The scope of the present article is to investigate the effect of hypofractionated radiotherapy protocol (2.66 Gy × 16 sessions) both on silicone and polyurethane breast implants. Silicone implants and polyurethane underwent irradiation according to a hypofractionated radiotherapy protocol for the treatment of breast cancer. After irradiation implant shells underwent mechanical, chemical, and microstructural evaluation by means of tensile testing, infrared spectra in attenuated total reflectance mode, nuclear magnetic resonance, and field emission scanning electron microscopy. At superficial analysis, irradiated silicone samples show several visible secondary and tertiary blebs. Polyurethane implants showed an open cell structure, which closely resembles a sponge. Morphological observation of struts from treated polyurethane sample shows a more compact structure, with significantly shorter and thicker struts compared with untreated sample. The infrared spectra in attenuated total reflectance mode spectra of irradiated and control samples were compared either for silicon and polyurethane samples. In the case of silicone-based membranes, treated and control specimens showed similar bands, with little differences in the treated one. Nuclear magnetic resonance spectra on the fraction soluble in CDCl3 support these observations. Tensile tests on silicone samples showed a softer behavior of the treated ones. Tensile tests on Polyurethane samples showed no significant differences. Polyurethane implants seem to be more resistant to radiotherapy damage, whereas silicone prosthesis showed more structural, mechanical, and chemical modifications.

Silicone and Fluorosilicone Based Materials for Biomedical Applications

NASA Astrophysics Data System (ADS)

Palsule, Aniruddha S.

The biocompatibility and the biodurability of silicones is a result of various material properties such as hydrophobicity, low surface tension, high elasticity and chemical and thermal stability. A variety of biomedical implants employ an inflatable silicone rubber balloon filled with a saline solution. Commercial examples of such a system are silicone breast implants, tissue expanders and gastric bands for obesity control. Despite the advantages, saline filled silicones systems still have a certain set of challenges that need to be addressed in order to improve the functionality of these devices and validate their use as biomaterials. The central goal of this research is to identify these concerns, design solutions and to provide a better understanding of the behavior of implantable silicones. The first problem this research focuses on is the quantification and identification of the low molecular weight silicones that are not crosslinked into the elastomeric matrix and therefore can be leached out by solvent extraction. We have developed an environmentally friendly pre-extraction technique using supercritical CO 2 and also determined the exact nature of the extractables using Gas Chromatography. We have also attempted to address the issue of an observed loss of pressure in the saline filled device during application by studying the relaxation behavior of silicone elastomer using Dynamic Mechanical Analysis and constructing long-term relaxation master curves. We have also developed a technique to develop highly hydrophobic fluorinated barrier layers for the silicone in order to prevent diffusion of water vapor across the walls of the implant. This involves a hybrid process consisting of surface modification by plasma technology followed by two different coating formulations. The first formulation employed UV curable fluorinated acrylate monomers for the coating process and the second was based on Atom Transfer Radical Polymerization (ATRP) to generate a fluorinated coating that is covalently grafted on the silicone surface in the form of dense polymer brushes. The research also attempts to validate the use of sterilization of the implant with gamma irradiation by comprehensively reviewing the existing literature and then summarizing the effects of gamma irradiation on linear, cyclic and crosslinked silicones. We have predicted a model describing the effects of irradiation and supplemented that with data in the laboratory. Finally we have investigated the use of biological enzymes as alternate catalyst systems for the synthesis of silicone copolymers. We have demonstrated the use of the enzyme Lipase (CALB), as a catalyst for the synthesis of fluorosilicone copolymers containing ester and amide linkages.

Directed Atom-by-Atom Assembly of Dopants in Silicon.

PubMed

Hudak, Bethany M; Song, Jiaming; Sims, Hunter; Troparevsky, M Claudia; Humble, Travis S; Pantelides, Sokrates T; Snijders, Paul C; Lupini, Andrew R

2018-05-17

The ability to controllably position single atoms inside materials is key for the ultimate fabrication of devices with functionalities governed by atomic-scale properties. Single bismuth dopant atoms in silicon provide an ideal case study in view of proposals for single-dopant quantum bits. However, bismuth is the least soluble pnictogen in silicon, meaning that the dopant atoms tend to migrate out of position during sample growth. Here, we demonstrate epitaxial growth of thin silicon films doped with bismuth. We use atomic-resolution aberration-corrected imaging to view the as-grown dopant distribution and then to controllably position single dopants inside the film. Atomic-scale quantum-mechanical calculations corroborate the experimental findings. These results indicate that the scanning transmission electron microscope is of particular interest for assembling functional materials atom-by-atom because it offers both real-time monitoring and atom manipulation. We envision electron-beam manipulation of atoms inside materials as an achievable route to controllable assembly of structures of individual dopants.

Nonlinear Silicon Photonics: Extending Platforms, Control, and Applications

NASA Astrophysics Data System (ADS)

Miller, Steven Andrew

Silicon photonics is a revolutionary technology that enables the control of light inside a silicon chip and holds promise to impact many applications from data center optical interconnects to optical sensing and even quantum optics. The tight confinement of light inside these chips greatly enhances light-matter interactions, making this an ideal platform for nonlinear photonics. Recently, microresonator-based Kerr frequency comb generation has become a prevalent emerging field, enabling the generation of a broadband optical pulse train by inputting a low-power continuous-wave laser into a low-loss chip-scale micro-cavity. These chip-scale combs have a wide variety of applications, including optical clocks, optical spectroscopy, and data communications. Several important applications in biological, chemical and atmospheric areas require combs generated in the visible and mid-infrared wavelength ranges, where there has been far less research and development compared with the near-infrared. Additionally, most platforms widely for combs are passive, limiting the ability to control and optimize the frequency combs. In this dissertation, we set out to address these shortcomings and introduce new tunability as well as wavelength flexibility in order to enable new applications for microresonator frequency combs. The silicon nitride platform for near-infrared combs is generally a passive platform with limited tuning capabilities. We overcome dispersion limitations in the visible range by leveraging the second-order nonlinearity of silicon nitride and demonstrate visible comb lines. We then further investigate the second-order nonlinearity of silicon nitride by measuring the linear electro-optic effect, a potential tuning mechanism. Finally, we introduce thermal tuning onto the silicon nitride platform and demonstrate tuning of the resonance extinction and dispersion of a micro-cavity using a coupled cavity design. We also address the silicon mid-infrared frequency comb platform. The transparency range of the traditional silicon platform prohibits operation beyond 4 mum wavelength. Here we show that a silicon photonics platform can be leveraged for broadband mid-infrared operation without introducing complexity in fabrication. Both an air-clad and fully suspended silicon platform can enable broadband, low-loss propagation and comb generation as high as 6 mum. We demonstrate a high quality factor resonator near 4 mum wavelength, more than an order of magnitude higher than the traditional platform. Finally, we discuss future avenues of research building on the work presented here.

Method of preparing high-temperature-stable thin-film resistors

DOEpatents

Raymond, L.S.

1980-11-12

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Thermal oxidation and nitridation of Si nanowalls prepared by metal assisted chemical etching

NASA Astrophysics Data System (ADS)

Behera, Anil K.; Viswanath, R. N.; Lakshmanan, C.; Polaki, S. R.; Sarguna, R. M.; Mathews, Tom

2018-04-01

Silicon nanowalls with controlled orientation have been prepared using metal assisted chemical etching process. Thermal oxidation and nitridation processes have been carried out on the prepared silicon nanowalls under a control flow of oxygen/nitrogen gases independently at 1050°C for 900s. The morphology and structural properties of the as-prepared, oxidized and nitridated silicon nanowalls have been studied using the scanning electron microscopy and the Grazing incident X-ray diffraction techniques. The results obtained from the analysis of X-ray diffraction patterns and the microscopy images are discussed.

Electrical and mechanical tuning of a silicon vacancy defect in SiC for quantum information technology

NASA Astrophysics Data System (ADS)

Soykal, Oney O.; Reinecke, Thomas L.

We develop coherent control via Stark effect over the optical transition energies of silicon monovacancy deep center in hexagonal silicon carbide. We show that this defect's unique asymmetry properties of its piezoelectric tensor and Kramer's degenerate high-spin ground/excited state configurations can be used to create new possibilities in quantum information technology ranging from photonic networks to quantum key distribution. We also give examples of its qubit implementations via precise electric field control. This work was supported in part by ONR and by the Office of Secretary of Defense, Quantum Science and Engineering Program.

Method of preparing high-temperature-stable thin-film resistors

DOEpatents

Raymond, Leonard S.

1983-01-01

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Trench formation in <110> silicon for millimeter-wave switching device

NASA Astrophysics Data System (ADS)

Datta, P.; Kumar, Praveen; Nag, Manoj; Bhattacharya, D. K.; Khosla, Y. P.; Dahiya, K. K.; Singh, D. V.; Venkateswaran, R.; Kumar, Devender; Kesavan, R.

1999-11-01

Anisotropic etching using alkaline solution has been adopted to form trenches in silicon while fabricating surface oriented bulk window SPST switches. An array pattern has been etched on silicon with good control on depth of trenches. KOH-water solution is seen to yield a poor surface finish. Use of too much of additive like isopropyl alcohol improves the surface condition but distorts the array pattern due to loss of anisotropy. However, controlled use of this additive during the last phase of trench etching is found to produce trenched arrays with desired depth, improved surface finish and minimum distortion of lateral dimensions.

Improving Atomic Force Microscopy Imaging by a Direct Inverse Asymmetric PI Hysteresis Model

PubMed Central

Wang, Dong; Yu, Peng; Wang, Feifei; Chan, Ho-Yin; Zhou, Lei; Dong, Zaili; Liu, Lianqing; Li, Wen Jung

2015-01-01

A modified Prandtl–Ishlinskii (PI) model, referred to as a direct inverse asymmetric PI (DIAPI) model in this paper, was implemented to reduce the displacement error between a predicted model and the actual trajectory of a piezoelectric actuator which is commonly found in AFM systems. Due to the nonlinearity of the piezoelectric actuator, the standard symmetric PI model cannot precisely describe the asymmetric motion of the actuator. In order to improve the accuracy of AFM scans, two series of slope parameters were introduced in the PI model to describe both the voltage-increase-loop (trace) and voltage-decrease-loop (retrace). A feedforward controller based on the DIAPI model was implemented to compensate hysteresis. Performance of the DIAPI model and the feedforward controller were validated by scanning micro-lenses and standard silicon grating using a custom-built AFM. PMID:25654719

Long-Term Health Outcomes in Women With Silicone Gel Breast Implants: A Systematic Review.

PubMed

Balk, Ethan M; Earley, Amy; Avendano, Esther A; Raman, Gowri

2016-02-02

Silicone gel breast implants were removed from the U.S. market for cosmetic use in 1992 owing to safety concerns. They were reintroduced in 2006, with a call for improved surveillance of clinical outcomes. To systematically review the literature regarding specific long-term health outcomes in women with silicone gel breast implants, including cancer; connective tissue, rheumatologic, and autoimmune diseases; neurologic diseases; reproductive issues, including lactation; offspring issues; and mental health issues (depression and suicide). MEDLINE, EMBASE, and Ovid Healthstar (inception through 30 June 2015), and the Cochrane Central Register of Controlled Trials and Cochrane Database of Systematic Reviews (through the first quarter of 2015). 4 researchers double-screened articles for longitudinal studies that compared women with and without breast implants and reported long-term health outcomes of interest. 4 researchers extracted data on participant and implant characteristics, analytic methods, and results. 32 studies (in 58 publications) met eligibility criteria. Random-effects model meta-analyses of effect sizes were conducted when feasible. For most outcomes, there was at most only a single adequately adjusted study, which usually found no significant associations. There were possible associations with decreased risk for primary breast and endometrial cancers and increased risks for lung cancer, rheumatoid arthritis, Sjögren syndrome, and Raynaud syndrome. Evidence on breast implants and other outcomes either was limited or did not exist. The evidence was most frequently not specific to silicone gel implants, and studies were rarely adequately adjusted for potential confounders. The evidence remains inconclusive about any association between silicone gel implants and long-term health outcomes. Better evidence is needed from existing large studies, which can be reanalyzed to clarify the strength of associations between silicone gel implants and health outcomes. The Plastic Surgery Foundation.

Electron beam induced deposition of silicon nanostructures from a liquid phase precursor.

PubMed

Liu, Yin; Chen, Xin; Noh, Kyong Wook; Dillon, Shen J

2012-09-28

This work demonstrates electron beam induced deposition of silicon from a SiCl(4) liquid precursor in a transmission electron microscope and a scanning electron microscope. Silicon nanodots of tunable size are reproducibly grown in controlled geometries. The volume of these features increases linearly with deposition time. The results indicate that secondary electrons generated at the substrate surface serve as the primary source of silicon reduction. However, at high current densities the influence of the primary electrons is observed to retard growth. The results demonstrate a new approach to fabricating silicon nanostructures and provide fundamental insights into the mechanism for liquid phase electron beam induced deposition.

Electron beam induced deposition of silicon nanostructures from a liquid phase precursor

NASA Astrophysics Data System (ADS)

Liu, Yin; Chen, Xin; Noh, Kyong Wook; Dillon, Shen J.

2012-09-01

This work demonstrates electron beam induced deposition of silicon from a SiCl4 liquid precursor in a transmission electron microscope and a scanning electron microscope. Silicon nanodots of tunable size are reproducibly grown in controlled geometries. The volume of these features increases linearly with deposition time. The results indicate that secondary electrons generated at the substrate surface serve as the primary source of silicon reduction. However, at high current densities the influence of the primary electrons is observed to retard growth. The results demonstrate a new approach to fabricating silicon nanostructures and provide fundamental insights into the mechanism for liquid phase electron beam induced deposition.

Lifetime of excitons localized in Si nanocrystals in amorphous silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gusev, O. B.; Belolipetskiy, A. V., E-mail: alexey.belolipetskiy@mail.ioffe.ru; Yassievich, I. N.

2016-05-15

The introduction of nanocrystals plays an important role in improving the stability of the amorphous silicon films and increasing the carrier mobility. Here we report results of the study on the photoluminescence and its dynamics in the films of amorphous hydrogenated silicon containing less than 10% of silicon nanocrystals. The comparing of the obtained experimental results with the calculated probability of the resonant tunneling of the excitons localized in silicon nanocrystals is presented. Thus, it has been estimated that the short lifetime of excitons localized in Si nanocrystal is controlled by the resonant tunneling to the nearest tail state ofmore » the amorphous matrix.« less

Silicon nitride equation of state

NASA Astrophysics Data System (ADS)

Brown, Robert C.; Swaminathan, Pazhayannur K.

2017-01-01

This report presents the development of a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4).1 Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonal β-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data that have indicated a complex and slow time dependent phase change to the c-Si3N4 phase. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products; however, the need for a kinetic approach is suggested to combine with the single component solid models to simulate and further investigate the global phase coexistences.

An Analytical Model of Joule Heating in Piezoresistive Microcantilevers

PubMed Central

Ansari, Mohd Zahid; Cho, Chongdu

2010-01-01

The present study investigates Joule heating in piezoresistive microcantilever sensors. Joule heating and thermal deflections are a major source of noise in such sensors. This work uses analytical and numerical techniques to characterise the Joule heating in 4-layer piezoresistive microcantilevers made of silicon and silicon dioxide substrates but with the same U-shaped silicon piezoresistor. A theoretical model for predicting the temperature generated due to Joule heating is developed. The commercial finite element software ANSYS Multiphysics was used to study the effect of electrical potential on temperature and deflection produced in the cantilevers. The effect of piezoresistor width on Joule heating is also studied. Results show that Joule heating strongly depends on the applied potential and width of piezoresistor and that a silicon substrate cantilever has better thermal characteristics than a silicon dioxide cantilever. PMID:22163433

An analytical model of joule heating in piezoresistive microcantilevers.

PubMed

Ansari, Mohd Zahid; Cho, Chongdu

2010-01-01

The present study investigates Joule heating in piezoresistive microcantilever sensors. Joule heating and thermal deflections are a major source of noise in such sensors. This work uses analytical and numerical techniques to characterise the Joule heating in 4-layer piezoresistive microcantilevers made of silicon and silicon dioxide substrates but with the same U-shaped silicon piezoresistor. A theoretical model for predicting the temperature generated due to Joule heating is developed. The commercial finite element software ANSYS Multiphysics was used to study the effect of electrical potential on temperature and deflection produced in the cantilevers. The effect of piezoresistor width on Joule heating is also studied. Results show that Joule heating strongly depends on the applied potential and width of piezoresistor and that a silicon substrate cantilever has better thermal characteristics than a silicon dioxide cantilever.

Overview of processing activities aimed at higher efficiencies and economical production

NASA Technical Reports Server (NTRS)

Bickler, D. B.

1985-01-01

An overview of processing activities aimed at higher efficiencies and economical production were presented. Present focus is on low-cost process technology for higher-efficiency cells of up to 18% or higher. Process development concerns center on the use of less than optimum silicon sheet, the control of production yields, and making uniformly efficient large-area cells. High-efficiency cell factors that require process development are bulk material perfection, very shallow junction formation, front-surface passivation, and finely detailed metallization. Better bulk properties of the silicon sheet and the keeping of those qualities throughout large areas during cell processing are required so that minority carrier lifetimes are maintained and cell performance is not degraded by high doping levels. When very shallow junctions are formed, the process must be sensitive to metallizatin punch-through, series resisitance in the cell, and control of dopant leaching during surface passivation. There is a need to determine the sensitivity to processing by mathematical modeling and experimental activities.

Atomistics of vapour–liquid–solid nanowire growth

PubMed Central

Wang, Hailong; Zepeda-Ruiz, Luis A.; Gilmer, George H.; Upmanyu, Moneesh

2013-01-01

Vapour–liquid–solid route and its variants are routinely used for scalable synthesis of semiconducting nanowires, yet the fundamental growth processes remain unknown. Here we employ atomic-scale computations based on model potentials to study the stability and growth of gold-catalysed silicon nanowires. Equilibrium studies uncover segregation at the solid-like surface of the catalyst particle, a liquid AuSi droplet, and a silicon-rich droplet–nanowire interface enveloped by heterogeneous truncating facets. Supersaturation of the droplets leads to rapid one-dimensional growth on the truncating facets and much slower nucleation-controlled two-dimensional growth on the main facet. Surface diffusion is suppressed and the excess Si flux occurs through the droplet bulk which, together with the Si-rich interface and contact line, lowers the nucleation barrier on the main facet. The ensuing step flow is modified by Au diffusion away from the step edges. Our study highlights key interfacial characteristics for morphological and compositional control of semiconducting nanowire arrays. PMID:23752586

A silicon avalanche photodiode detector circuit for Nd:YAG laser scattering

NASA Astrophysics Data System (ADS)

Hsieh, C.-L.; Haskovec, J.; Carlstrom, T. N.; Deboo, J. C.; Greenfield, C. M.; Snider, R. T.; Trost, P.

1990-06-01

A silicon avalanche photodiode with an internal gain of about 50 to 100 is used in a temperature controlled environment to measure the Nd:YAG laser Thomson scattered spectrum in the wavelength range from 700 to 1150 nm. A charge sensitive preamplifier was developed for minimizing the noise contribution from the detector electronics. Signal levels as low as 20 photoelectrons (S/N = 1) can be detected. Measurements show that both the signal and the variance of the signal vary linearly with the input light level over the range of interest, indicating Poisson statistics. The signal is processed using a 100 ns delay line and a differential amplifier which subtracts the low frequency background light component. The background signal is amplified with a computer controlled variable gain amplifier and is used for an estimate of the measurement error, calibration, and Z sub eff measurements of the plasma. The signal processing was analyzed using a theoretical model to aid the system design and establish the procedure for data error analysis.

Silicon avalanche photodiode detector circuit for Nd:YAG laser scattering

NASA Astrophysics Data System (ADS)

Hsieh, C. L.; Haskovec, J.; Carlstrom, T. N.; DeBoo, J. C.; Greenfield, C. M.; Snider, R. T.; Trost, P.

1990-10-01

A silicon avalanche photodiode with an internal gain of about 50 to 100 is used in a temperature-controlled environment to measure the Nd:YAG laser Thomson scattered spectrum in the wavelength range from 700 to 1150 nm. A charge-sensitive preamplifier has been developed for minimizing the noise contribution from the detector electronics. Signal levels as low as 20 photoelectrons (S/N=1) can be detected. Measurements show that both the signal and the variance of the signal vary linearly with the input light level over the range of interest, indicating Poisson statistics. The signal is processed using a 100 ns delay line and a differential amplifier which subtracts the low-frequency background light component. The background signal is amplified with a computer-controlled variable gain amplifier and is used for an estimate of the measurement error, calibration, and Zeff measurements of the plasma. The signal processing has been analyzed using a theoretical model to aid the system design and establish the procedure for data error analysis.

Silicon carbide and other films and method of deposition

NASA Technical Reports Server (NTRS)

Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy L. (Inventor)

2007-01-01

A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

Surface Control of Actuated Hybrid Space Mirrors

DTIC Science & Technology

2010-10-01

precision Nanolaminate foil facesheet and Silicon Carbide ( SiC ) substrate embedded with electroactive ceramic actuators. Wavefront sensors are used to...integrate precision Nanolaminate foil facesheet with Silicon Carbide ( SiC ) substrate equipped with embedded electroactive ceramic actuators...IAC-10.C2.5.8 SURFACE CONTROL OF ACTUATED HYBRID SPACE MIRRORS Brij. N. Agrawal Naval Postgraduate School, Monterey, CA, 93943, agrawal

Silicon carbide and other films and method of deposition

NASA Technical Reports Server (NTRS)

Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy (Inventor)

2011-01-01

A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

Polarization-independent silicon metadevices for efficient optical wavefront control

DOE PAGES

Chong, Katie E.; Staude, Isabelle; James, Anthony Randolph; ...

2015-07-20

In this study, we experimentally demonstrate a functional silicon metadevice at telecom wavelengths that can efficiently control the wavefront of optical beams by imprinting a spatially varying transmittance phase independent of the polarization of the incident beam. Near-unity transmittance efficiency and close to 0–2π phase coverage are enabled by utilizing the localized electric and magnetic Mie-type resonances of low-loss silicon nanoparticles tailored to behave as electromagnetically dual-symmetric scatterers. We apply this concept to realize a metadevice that converts a Gaussian beam into a vortex beam. The required spatial distribution of transmittance phases is achieved by a variation of the latticemore » spacing as a single geometric control parameter.« less

Polarization-independent silicon metadevices for efficient optical wavefront control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chong, Katie E.; Staude, Isabelle; James, Anthony Randolph

In this study, we experimentally demonstrate a functional silicon metadevice at telecom wavelengths that can efficiently control the wavefront of optical beams by imprinting a spatially varying transmittance phase independent of the polarization of the incident beam. Near-unity transmittance efficiency and close to 0–2π phase coverage are enabled by utilizing the localized electric and magnetic Mie-type resonances of low-loss silicon nanoparticles tailored to behave as electromagnetically dual-symmetric scatterers. We apply this concept to realize a metadevice that converts a Gaussian beam into a vortex beam. The required spatial distribution of transmittance phases is achieved by a variation of the latticemore » spacing as a single geometric control parameter.« less

Report on Contract W911NF-05-1-0339 (Clarkson University)

DTIC Science & Technology

2012-11-30

voltammetry and impedance spectroscopy: voltage dependent parameters of a silicon solar cell under controlled illumination and temperature, Energy...voltammetry for quantitative evaluation of temperature and voltage dependent parameters of a silicon solar cell , Solar Energy, (11 2011): 0. doi: 10.1016...characterization of silicon solar cells in the electro-analytical approach: Combined measurements of temperature and voltage dependent electrical

Multibit Polycristalline Silicon-Oxide-Silicon Nitride-Oxide-Silicon Memory Cells with High Density Designed Utilizing a Separated Control Gate

NASA Astrophysics Data System (ADS)

Rok Kim, Kyeong; You, Joo Hyung; Dal Kwack, Kae; Kim, Tae Whan

2010-10-01

Unique multibit NAND polycrystalline silicon-oxide-silicon nitride-oxide-silicon (SONOS) memory cells utilizing a separated control gate (SCG) were designed to increase memory density. The proposed NAND SONOS memory device based on a SCG structure was operated as two bits, resulting in an increase in the storage density of the NVM devices in comparison with conventional single-bit memories. The electrical properties of the SONOS memory cells with a SCG were investigated to clarify the charging effects in the SONOS memory cells. When the program voltage was supplied to each gate of the NAND SONOS flash memory cells, the electrons were trapped in the nitride region of the oxide-nitride-oxide layer under the gate to supply the program voltage. The electrons were accumulated without affecting the other gate during the programming operation, indicating the absence of cross-talk between two trap charge regions. It is expected that the inference effect will be suppressed by the lower program voltage than the program voltage of the conventional NAND flash memory. The simulation results indicate that the proposed unique NAND SONOS memory cells with a SCG can be used to increase memory density.

A surface code quantum computer in silicon

PubMed Central

Hill, Charles D.; Peretz, Eldad; Hile, Samuel J.; House, Matthew G.; Fuechsle, Martin; Rogge, Sven; Simmons, Michelle Y.; Hollenberg, Lloyd C. L.

2015-01-01

The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, coupled with the proven scalability of silicon-based nano-electronics, make them attractive candidates for large-scale quantum computing. However, the high threshold of topological quantum error correction can only be captured in a two-dimensional array of qubits operating synchronously and in parallel—posing formidable fabrication and control challenges. We present an architecture that addresses these problems through a novel shared-control paradigm that is particularly suited to the natural uniformity of the phosphorus donor nuclear spin qubit states and electronic confinement. The architecture comprises a two-dimensional lattice of donor qubits sandwiched between two vertically separated control layers forming a mutually perpendicular crisscross gate array. Shared-control lines facilitate loading/unloading of single electrons to specific donors, thereby activating multiple qubits in parallel across the array on which the required operations for surface code quantum error correction are carried out by global spin control. The complexities of independent qubit control, wave function engineering, and ad hoc quantum interconnects are explicitly avoided. With many of the basic elements of fabrication and control based on demonstrated techniques and with simulated quantum operation below the surface code error threshold, the architecture represents a new pathway for large-scale quantum information processing in silicon and potentially in other qubit systems where uniformity can be exploited. PMID:26601310

A surface code quantum computer in silicon.

PubMed

Hill, Charles D; Peretz, Eldad; Hile, Samuel J; House, Matthew G; Fuechsle, Martin; Rogge, Sven; Simmons, Michelle Y; Hollenberg, Lloyd C L

2015-10-01

The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, coupled with the proven scalability of silicon-based nano-electronics, make them attractive candidates for large-scale quantum computing. However, the high threshold of topological quantum error correction can only be captured in a two-dimensional array of qubits operating synchronously and in parallel-posing formidable fabrication and control challenges. We present an architecture that addresses these problems through a novel shared-control paradigm that is particularly suited to the natural uniformity of the phosphorus donor nuclear spin qubit states and electronic confinement. The architecture comprises a two-dimensional lattice of donor qubits sandwiched between two vertically separated control layers forming a mutually perpendicular crisscross gate array. Shared-control lines facilitate loading/unloading of single electrons to specific donors, thereby activating multiple qubits in parallel across the array on which the required operations for surface code quantum error correction are carried out by global spin control. The complexities of independent qubit control, wave function engineering, and ad hoc quantum interconnects are explicitly avoided. With many of the basic elements of fabrication and control based on demonstrated techniques and with simulated quantum operation below the surface code error threshold, the architecture represents a new pathway for large-scale quantum information processing in silicon and potentially in other qubit systems where uniformity can be exploited.

Rough SERS substrate based on gold coated porous silicon layer prepared on the silicon backside surface

NASA Astrophysics Data System (ADS)

Dridi, H.; Haji, L.; Moadhen, A.

2017-04-01

We report in this paper a novel method to elaborate rough Surface Enhanced Raman Scattering (SERS) substrate. A single layer of porous silicon was formed on the silicon backside surface. Morphological characteristics of the porous silicon layer before and after gold deposition were influenced by the rough character (gold size). The reflectance measurements showed a dependence of the gold nano-grains size on the surface nature, through the Localized Surface Plasmon (LSP) band properties. SERS signal of Rhodamine 6G used as a model analyte, adsorbed on the rough porous silicon layer revealed a marked enhancement of its vibrational modes intensities.

Temperature and flow fields in samples heated in monoellipsoidal mirror furnaces

NASA Astrophysics Data System (ADS)

Rivas, D.; Haya, R.

The temperature field in samples heated in monoellipsoidal mirror furnaces will be analyzed. The radiation heat exchange between the sample and the mirror is formulated analytically, taking into account multiple reflections at the mirror. It will be shown that the effect of these multiple reflections in the heating process is quite important, and, as a consequence, the effect of the mirror reflectance in the temperature field is quite strong. The conduction-radiation model will be used to simulate the heating process in the floating-zone technique in microgravity conditions; important parameters like the Marangoni number (that drives the thermocapillary flow in the melt), and the temperature gradient at the melt-crystal interface will be estimated. The model will be validated comparing with experimental data. The case of samples mounted in a wall-free configuration (as in the MAXUS-4 programme) will be also considered. Application to the case of compound samples (graphite-silicon-graphite) will be made; the melting of the silicon part and the surface temperature distribution in the melt will be analyzed. Of special interest is the temperature difference between the two graphite rods that hold the silicon part, since it drives the thermocapillary flow in the melt. This thermocapillary flow will be studied, after coupling the previous model with the convective effects. The possibility of counterbalancing this flow by the controlled vibration of the graphite rods will be studied as well. Numerical results show that suppressing the thermocapillary flow can be accomplished quite effectively.

A Computer-Automated Temperature Control System for Semiconductor Measurements.

DTIC Science & Technology

1979-11-01

Engineer: Jerry Silverman (RADC/ESE) temperature controller silicon devices data acquisition system mini-computer control application semiconductor dovice...characterization semiconductor materijals characterization silicon .’ AtlI EAC T 1 -fI I,,’-, *- s t ---v,.1.,,~ - d,f101h ir- IA i lr A computer...depends on the composition of the metals and the temperature of the junction. As the temperature of the junction increases so does the voltage at the

Characterization of the initial level and migration of silicone oil lubricant in empty prefilled syringes for biologics using infrared spectroscopy.

PubMed

Bee, Jared S; Frey, Vadim V; Javed, Urooj; Chung, Jonathan; Corcoran, Marta L; Roussel, Paul S; Krause, Stephan O; Cash, Patricia W; Bishop, Steven M; Dimitrova, Mariana N

2014-01-01

Glass prefillable syringes are lubricated with silicone oil to ensure functionality and a consistent injection for the end user. If excessive silicone is applied, droplets could potentially result in aggregation of sensitive biopharmaceuticals or clouding of the solution. Therefore, monitoring and optimization of the applied silicone layer is critical for prefilled syringe development. The hydrophobic properties of silicone oil, the potential for assay interference, and the very small quantities applied to prefilled syringes present a challenge for the development of a suitable assay. In this work we present a rapid and simple Fourier transform infrared (FTIR) spectroscopy method for quantitation of total silicone levels applied to prefilled syringes. Level-dependent silicone oil migration occurred over time for empty prefilled syringes stored tip-up. However, migration from all prefilled syringes with between 0.25 and 0.8 mg of initial silicone oil resulted in a stable limiting minimum level of between 0.15 and 0.26 mg of silicone in the syringe reached after 1 to 4 years of empty tip-up storage. The results of the FTIR assay correlated well with non-destructive reflectometry characterization of the syringes. This assay can provide valuable data for selection of a robust initial silicone oil target and quality control of prefilled syringes intended for biopharmaceuticals. Glass prefillable syringes are lubricated with silicone oil to ensure functionality and a consistent injection for the end user. If excessive silicone is applied, droplets could potentially result in aggregation of sensitive biopharmaceuticals or clouding of the solution. Therefore, monitoring and optimization of the applied silicone layer is critical for prefilled syringe development. The hydrophobic properties of silicone oil, the potential for assay interference, and the very small quantities applied to prefilled syringes present a challenge for the development of a suitable assay. In this work we present a rapid and simple Fourier transform infrared (FTIR) spectroscopy method for quantitation of total silicone levels applied to prefilled syringes. Level-dependent silicone oil migration occurred over time for empty prefilled syringes stored tip-up. However, migration from all prefilled syringes with between 0.25 and 0.8 mg of initial silicone oil resulted in a stable limiting minimum level of between 0.15 and 0.26 mg of silicone in the syringe reached after 1 to 4 years of empty tip-up storage. The results of the FTIR assay correlated well with non-destructive reflectometry characterization of the syringes. This assay can provide valuable data for selection of a robust initial silicone oil target and quality control of prefilled syringes intended for biopharmaceuticals. © PDA, Inc. 2014.

Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

NASA Technical Reports Server (NTRS)

Singh, M.; Behrendt, D. R.

1992-01-01

Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

"Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

NASA Astrophysics Data System (ADS)

Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

2013-04-01

During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

Study program to develop and evaluate die and container materials for the growth of silicon ribbons. [for development of low cost solar cells

NASA Technical Reports Server (NTRS)

Addington, L. A.; Ownby, P. D.; Yu, B. B.; Barsoum, M. W.; Romero, H. V.; Zealer, B. G.

1979-01-01

The development and evaluation of proprietary coatings of pure silicon carbide, silicon nitride, and aluminum nitride on less pure hot pressed substrates of the respective ceramic materials, is described. Silicon sessile drop experiments were performed on coated test specimens under controlled oxygen partial pressure. Prior to testing, X-ray diffraction and SEM characterization was performed. The reaction interfaces were characterized after testing with optical and scanning electron microscopy and Auger electron spectroscopy. Increasing the oxygen partial pressure was found to increase the molten silicon contact angle, apparently because adsorbed oxygen lowers the solid-vapor interfacial free energy. It was also found that adsorbed oxygen increased the degree of attack of molten silicon upon the chemical vapor deposited coatings. Cost projections show that reasonably priced, coated, molten silicon resistant refractory material shapes are obtainable.

Structure and compressive strength of silicon open-cell foam obtained by a centrifugal separation method

NASA Astrophysics Data System (ADS)

Cho, Ju-Young; Kim, Ki-Young

2013-03-01

The present study describes a new way to make an open-cell silicon foam from an Al-Si alloy melt by centrifugation during its solidification. The effects of the silicon content and the chute diameter of the crucible on the morphology, the density and the compressive strength of the silicon foams were investigated. A vertical-type centrifugal separator was designed to push the unfrozen Al-Si melt outside, leaving only the silicon foam inside the crucible during rotation. Alloys in the Al-Si system with silicon contents of 40 and 50 wt% were prepared by an electrical resistance furnace, and the revolution of the centrifugal separator was controlled to fabricate the foam. Open-cell silicon foams could be obtained successfully. The apparent density and the compressive strength were in the ranges of 620-820 kg/m3 and 7.5-14.5 MPa, respectively.

Protective coating for ceramic materials

NASA Technical Reports Server (NTRS)

Kourtides, Demetrius A. (Inventor); Churchward, Rex A. (Inventor); Lowe, David M. (Inventor)

1994-01-01

A protective coating for ceramic materials such as those made of silicon carbide, aluminum oxide, zirconium oxide, aluminoborosilicate and silicon dioxide, and a thermal control structure comprising a ceramic material having coated thereon the protective coating. The protective coating contains, in admixture, silicon dioxide powder, colloidal silicon dioxide, water, and one or more emittance agents selected from silicon tetraboride, silicon hexaboride, silicon carbide, molybdenum disilicide, tungsten disilicide and zirconium diboride. In another aspect, the protective coating is coated on a flexible ceramic fabric which is the outer cover of a composite insulation. In yet another aspect, a metallic foil is bonded to the outer surface of a ceramic fabric outer cover of a composite insulation via the protective coating. A primary application of this invention is as a protective coating for ceramic materials used in a heat shield for space vehicles subjected to very high aero-convective heating environments.

Porous siliconformation and etching process for use in silicon micromachining

DOEpatents

Guilinger, Terry R.; Kelly, Michael J.; Martin, Jr., Samuel B.; Stevenson, Joel O.; Tsao, Sylvia S.

1991-01-01

A reproducible process for uniformly etching silicon from a series of micromechanical structures used in electrical devices and the like includes providing a micromechanical structure having a silicon layer with defined areas for removal thereon and an electrochemical cell containing an aqueous hydrofluoric acid electrolyte. The micromechanical structure is submerged in the electrochemical cell and the defined areas of the silicon layer thereon are anodically biased by passing a current through the electrochemical cell for a time period sufficient to cause the defined areas of the silicon layer to become porous. The formation of the depth of the porous silicon is regulated by controlling the amount of current passing through the electrochemical cell. The micromechanical structure is then removed from the electrochemical cell and submerged in a hydroxide solution to remove the porous silicon. The process is subsequently repeated for each of the series of micromechanical structures to achieve a reproducibility better than 0.3%.

Nanophotonic applications for silicon-on-insulator (SOI)

NASA Astrophysics Data System (ADS)

de la Houssaye, Paul R.; Russell, Stephen D.; Shimabukuro, Randy L.

2004-07-01

Silicon-on-insulator is a proven technology for very large scale integration of microelectronic devices. The technology also offers the potential for development of nanophotonic devices and the ability to interface such devices to the macroscopic world. This paper will report on fabrication techniques used to form nano-structured silicon wires on an insulating structure that is amenable to interfacing nanostructured sensors with high-performance microelectronic circuitry for practical implementation. Nanostructures formed on silicon-on-sapphire can also exploit the transparent substrate for novel device geometries. This research harnesses the unique properties of a high-quality single crystal film of silicon on sapphire and uses the film thickness as one of the confinement dimensions. Lateral arrays of silicon nanowires were fabricated in the thin (5 to 20 nm) silicon layer and studied. This technique offers simplified contact to individual wires and provides wire surfaces that are more readily accessible for controlled alteration and device designs.

Optimization of metallic microheaters for high-speed reconfigurable silicon photonics.

PubMed

Atabaki, A H; Shah Hosseini, E; Eftekhar, A A; Yegnanarayanan, S; Adibi, A

2010-08-16

The strong thermooptic effect in silicon enables low-power and low-loss reconfiguration of large-scale silicon photonics. Thermal reconfiguration through the integration of metallic microheaters has been one of the more widely used reconfiguration techniques in silicon photonics. In this paper, structural and material optimizations are carried out through heat transport modeling to improve the reconfiguration speed of such devices, and the results are experimentally verified. Around 4 micros reconfiguration time are shown for the optimized structures. Moreover, sub-microsecond reconfiguration time is experimentally demonstrated through the pulsed excitation of the microheaters. The limitation of this pulsed excitation scheme is also discussed through an accurate system-level model developed for the microheater response.

Heavy doping effects in high efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.; Neugroschel, A.; Landsberg, P. T.; San, C. T.

1984-01-01

A model for bandgap shrinkage in semiconductors is developed and applied to silicon. A survey of earlier experiments, and of new ones, give an agreement between the model and experiments on n- and p-type silicon which is good as far as transport measurements in the 300 K range. The discrepancies between theory and experiment are no worse than the discrepancies between the experimental results of various authors. It also gives a good account of recent, optical determinations of band gap shrinkage at 5 K.

Thermal sensing of cryogenic wind tunnel model surfaces Evaluation of silicon diodes

NASA Technical Reports Server (NTRS)

Daryabeigi, K.; Ash, R. L.; Dillon-Townes, L. A.

1986-01-01

Different sensors and installation techniques for surface temperature measurement of cryogenic wind tunnel models were investigated. Silicon diodes were selected for further consideration because of their good inherent accuracy. Their average absolute temperature deviation in comparison tests with standard platinum resistance thermometers was found to be 0.2 K in the range from 125 to 273 K. Subsurface temperature measurement was selected as the installation technique in order to minimize aerodynamic interference. Temperature distortion caused by an embedded silicon diode was studied numerically.

Thermal sensing of cryogenic wind tunnel model surfaces - Evaluation of silicon diodes

NASA Technical Reports Server (NTRS)

Daryabeigi, Kamran; Ash, Robert L.; Dillon-Townes, Lawrence A.

1986-01-01

Different sensors and installation techniques for surface temperature measurement of cryogenic wind tunnel models were investigated. Silicon diodes were selected for further consideration because of their good inherent accuracy. Their average absolute temperature deviation in comparison tests with standard platinum resistance thermometers was found to be 0.2 K in the range from 125 to 273 K. Subsurface temperature measurement was selected as the installation technique in order to minimize aerodynamic interference. Temperature distortion caused by an embedded silicon diode was studied numerically.

Development of a process for high capacity arc heater production of silicon for solar arrays

NASA Technical Reports Server (NTRS)

Meyer, T. N.

1980-01-01

A high temperature silicon production process using existing electric arc heater technology is discussed. Silicon tetrachloride and a reductant, liquid sodium, were injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction occurred, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon were developed. The desired degree of separation was not achieved. The electrical, control and instrumentation, cooling water, gas, SiCl4, and sodium systems are discussed. The plasma reactor, silicon collection, effluent disposal, the gas burnoff stack, and decontamination and safety are also discussed. Procedure manuals, shakedown testing, data acquisition and analysis, product characterization, disassembly and decontamination, and component evaluation are reviewed.

[Substantiation of medical-engineering specifications for polymethyl siloxane removal by life support systems].

PubMed

Pakhomova, A A; Aksel'-Rubinshteĭn, V Z; Mikos, K N; Nikitin, E I

2009-01-01

Analysis of experimental data about the quantitative and qualitative chemical make-up of air in the orbital station Mir and International space station (ISS) showed a permanent presence of silicon. The main source of silicon contaminants seems to be a variety of polymethyl siloxane liquids and siloxane coating of electronics. The article describes the volatile silicon contaminants detected in space stations air. To control concentrations of silicon, the existing air purification system needs to be augmented with carbons having the micropore entrance larger than diameters of silicon-containing molecules. It is also important to elaborate the technology of polymethyl siloxane liquids synthesis so as to reduce the amount of volatile admixtures emission and to observe rigorously the pre-flight off-gassing requirements with special concern about silicon coatings.

Method utilizing laser-processing for the growth of epitaxial p-n junctions

DOEpatents

Young, R.T.; Narayan, J.; Wood, R.F.

1979-11-23

This invention is a new method for the formation of epitaxial p-n junctions in silicon. The method is relatively simple, rapid, and reliable. It produces doped epitaxial layers which are of well-controlled thickness and whose electrical properties are satisfactory. An illustrative form of the method comprises co-depositing a selected dopant and amorphous silicon on a crystalline silicon substrate to form a doped layer of amorphous silicon thereon. This layer then is irradiated with at least one laser pulse to generate a melt front which moves through the layer, into the silicon body to a depth effecting melting of virginal silicon, and back to the surface of the layer. The method may be conducted with dopants (e.g., boron and phosphorus) whose distribution coefficients approximate unity.

Low Cost Fabrication of Silicon Carbide Based Ceramics and Fiber Reinforced Composites

NASA Technical Reports Server (NTRS)

Singh, M.; Levine, S. R.

1995-01-01

A low cost processing technique called reaction forming for the fabrication of near-net and complex shaped components of silicon carbide based ceramics and composites is presented. This process consists of the production of a microporous carbon preform and subsequent infiltration with liquid silicon or silicon-refractory metal alloys. The microporous preforms are made by the pyrolysis of a polymerized resin mixture with very good control of pore volume and pore size thereby yielding materials with tailorable microstructure and composition. Mechanical properties (elastic modulus, flexural strength, and fracture toughness) of reaction-formed silicon carbide ceramics are presented. This processing approach is suitable for various kinds of reinforcements such as whiskers, particulates, fibers (tows, weaves, and filaments), and 3-D architectures. This approach has also been used to fabricate continuous silicon carbide fiber reinforced ceramic composites (CFCC's) with silicon carbide based matrices. Strong and tough composites with tailorable matrix microstructure and composition have been obtained. Microstructure and thermomechanical properties of a silicon carbide (SCS-6) fiber reinforced reaction-formed silicon carbide matrix composites are discussed.

Modeling electron beam parameters and plasma interface position in an anode plasma electron gun with hydrogen atmosphere

NASA Astrophysics Data System (ADS)

Krauze, A.; Virbulis, J.; Kravtsov, A.

2018-05-01

A beam glow discharge based electron gun can be applied as heater for silicon crystal growth systems in which silicon rods are pulled from melt. Impacts of high-energy charged particles cause wear and tear of the gun and generate an additional source of silicon contamination. A steady-state model for electron beam formation has been developed to model the electron gun and optimize its design. Description of the model and first simulation results are presented. It has been shown that the model can simulate dimensions of particle impact areas on the cathode and anode, but further improvements of the model are needed to correctly simulate electron trajectory distribution in the beam and the beam current dependence on the applied gas pressure.

Elevated temperature mechanical behavior of monolithic and SiC whisker-reinforced silicon nitrides

NASA Technical Reports Server (NTRS)

Salem, Jonathan A.; Choi, Sung R.; Sanders, William A.; Fox, Dennis S.

1991-01-01

The mechanical behavior of a 30 volume percent SiC whisker reinforced silicon nitride and a similar monolithic silicon nitride were measured at several temperatures. Measurements included strength, fracture toughness, crack growth resistance, dynamic fatigue susceptibility, post oxidation strength, and creep rate. Strength controlling defects were determined with fractographic analysis. The addition of SiC whiskers to silicon nitride did not substantially improve the strength, fracture toughness, or crack growth resistance. However, the fatigue resistance, post oxidation strength, and creep resistance were diminished by the whisker addition.

Bond Testing for Effects of Silicone Contamination

NASA Technical Reports Server (NTRS)

Plaia, James; Evans, Kurt

2005-01-01

In 2003 ATK Thiokol discovered that the smocks and coveralls worn by its operations personnel for safety and contamination control were themselves contaminated with a silicone defoamer and a silicone oil. As a growing list of items have been identified as having this form of contamination, it was desirable to devise a test method to determine if the contamination level detected could cause subsequent processing concerns. The smocks and coveralls could potentially contact bonding surfaces during processing so the test method focused on dry transfer of the silicone from the clothing to the bonding surface.

Silicone elastomers capable of large isotropic dimensional change

DOEpatents

Lewicki, James; Worsley, Marcus A.

2017-07-18

Described herein is a highly effective route towards the controlled and isotropic reduction in size-scale, of complex 3D structures using silicone network polymer chemistry. In particular, a class of silicone structures were developed that once patterned and cured can `shrink` micron scale additive manufactured and lithographically patterned structures by as much as 1 order of magnitude while preserving the dimensions and integrity of these parts. This class of silicone materials is compatible with existing additive manufacture and soft lithographic fabrication processes and will allow access to a hitherto unobtainable dimensionality of fabrication.

Simultaneous Purification and Perforation of Low-Grade Si Sources for Lithium-Ion Battery Anode.

PubMed

Jin, Yan; Zhang, Su; Zhu, Bin; Tan, Yingling; Hu, Xiaozhen; Zong, Linqi; Zhu, Jia

2015-11-11

Silicon is regarded as one of the most promising candidates for lithium-ion battery anodes because of its abundance and high theoretical capacity. Various silicon nanostructures have been heavily investigated to improve electrochemical performance by addressing issues related to structure fracture and unstable solid-electrolyte interphase (SEI). However, to further enable widespread applications, scalable and cost-effective processes need to be developed to produce these nanostructures at large quantity with finely controlled structures and morphologies. In this study, we develop a scalable and low cost process to produce porous silicon directly from low grade silicon through ball-milling and modified metal-assisted chemical etching. The morphology of porous silicon can be drastically changed from porous-network to nanowire-array by adjusting the component in reaction solutions. Meanwhile, this perforation process can also effectively remove the impurities and, therefore, increase Si purity (up to 99.4%) significantly from low-grade and low-cost ferrosilicon (purity of 83.4%) sources. The electrochemical examinations indicate that these porous silicon structures with carbon treatment can deliver a stable capacity of 1287 mAh g(-1) over 100 cycles at a current density of 2 A g(-1). This type of purified porous silicon with finely controlled morphology, produced by a scalable and cost-effective fabrication process, can also serve as promising candidates for many other energy applications, such as thermoelectrics and solar energy conversion devices.

A conformal, bio-interfaced class of silicon electronics for mapping cardiac electrophysiology.

PubMed

Viventi, Jonathan; Kim, Dae-Hyeong; Moss, Joshua D; Kim, Yun-Soung; Blanco, Justin A; Annetta, Nicholas; Hicks, Andrew; Xiao, Jianliang; Huang, Younggang; Callans, David J; Rogers, John A; Litt, Brian

2010-03-24

In all current implantable medical devices such as pacemakers, deep brain stimulators, and epilepsy treatment devices, each electrode is independently connected to separate control systems. The ability of these devices to sample and stimulate tissues is hindered by this configuration and by the rigid, planar nature of the electronics and the electrode-tissue interfaces. Here, we report the development of a class of mechanically flexible silicon electronics for multiplexed measurement of signals in an intimate, conformal integrated mode on the dynamic, three-dimensional surfaces of soft tissues in the human body. We demonstrate this technology in sensor systems composed of 2016 silicon nanomembrane transistors configured to record electrical activity directly from the curved, wet surface of a beating porcine heart in vivo. The devices sample with simultaneous submillimeter and submillisecond resolution through 288 amplified and multiplexed channels. We use this system to map the spread of spontaneous and paced ventricular depolarization in real time, at high resolution, on the epicardial surface in a porcine animal model. This demonstration is one example of many possible uses of this technology in minimally invasive medical devices.

Fabrication and Modification of Nanoporous Silicon Particles

NASA Technical Reports Server (NTRS)

Ferrari, Mauro; Liu, Xuewu

2010-01-01

Silicon-based nanoporous particles as biodegradable drug carriers are advantageous in permeation, controlled release, and targeting. The use of biodegradable nanoporous silicon and silicon dioxide, with proper surface treatments, allows sustained drug release within the target site over a period of days, or even weeks, due to selective surface coating. A variety of surface treatment protocols are available for silicon-based particles to be stabilized, functionalized, or modified as required. Coated polyethylene glycol (PEG) chains showed the effective depression of both plasma protein adsorption and cell attachment to the modified surfaces, as well as the advantage of long circulating. Porous silicon particles are micromachined by lithography. Compared to the synthesis route of the nanomaterials, the advantages include: (1) the capability to make different shapes, not only spherical particles but also square, rectangular, or ellipse cross sections, etc.; (2) the capability for very precise dimension control; (3) the capacity for porosity and pore profile control; and (4) allowance of complex surface modification. The particle patterns as small as 60 nm can be fabricated using the state-of-the-art photolithography. The pores in silicon can be fabricated by exposing the silicon in an HF/ethanol solution and then subjecting the pores to an electrical current. The size and shape of the pores inside silicon can be adjusted by the doping of the silicon, electrical current application, the composition of the electrolyte solution, and etching time. The surface of the silicon particles can be modified by many means to provide targeted delivery and on-site permanence for extended release. Multiple active agents can be co-loaded into the particles. Because the surface modification of particles can be done on wafers before the mechanical release, asymmetrical surface modification is feasible. Starting from silicon wafers, a treatment, such as KOH dipping or reactive ion etching (RIE), may be applied to make the surface rough. This helps remove the nucleation layer. A protective layer is then deposited on the wafer. The protective layer, such as silicon nitride film or photoresist film, protects the wafer from electrochemical etching in an HF-based solution. A lithography technique is applied to pattern the particles onto the protective film. The undesired area of the protective film is removed, and the protective film on the back side of the wafer is also removed. Then the pattern is exposed to HF/surfactant solution, and a larger DC electrical current is applied to the wafers for a selected time. This step removes the nucleation layer. Then a DC current is applied to generate the nanopores. Next, a large electrical current is applied to generate a release layer. The particles are mechanically suspended in the solvent and collected by filtration or centrifuge.

Quantum simulation of the Hubbard model with dopant atoms in silicon

PubMed Central

Salfi, J.; Mol, J. A.; Rahman, R.; Klimeck, G.; Simmons, M. Y.; Hollenberg, L. C. L.; Rogge, S.

2016-01-01

In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose–Hubbard Hamiltonians using cold atoms revealed previously hidden local correlations. However, fermionic many-body Hubbard phenomena such as unconventional superconductivity and spin liquids are more difficult to simulate using cold atoms. To date the required single-site measurements and cooling remain problematic, while only ensemble measurements have been achieved. Here we simulate a two-site Hubbard Hamiltonian at low effective temperatures with single-site resolution using subsurface dopants in silicon. We measure quasi-particle tunnelling maps of spin-resolved states with atomic resolution, finding interference processes from which the entanglement entropy and Hubbard interactions are quantified. Entanglement, determined by spin and orbital degrees of freedom, increases with increasing valence bond length. We find separation-tunable Hubbard interaction strengths that are suitable for simulating strongly correlated phenomena in larger arrays of dopants, establishing dopants as a platform for quantum simulation of the Hubbard model. PMID:27094205

EXPERIMENTAL MODELLING OF AORTIC ANEURYSMS

PubMed Central

Doyle, Barry J; Corbett, Timothy J; Cloonan, Aidan J; O’Donnell, Michael R; Walsh, Michael T; Vorp, David A; McGloughlin, Timothy M

2009-01-01

A range of silicone rubbers were created based on existing commercially available materials. These silicones were designed to be visually different from one another and have distinct material properties, in particular, ultimate tensile strengths and tear strengths. In total, eleven silicone rubbers were manufactured, with the materials designed to have a range of increasing tensile strengths from approximately 2-4MPa, and increasing tear strengths from approximately 0.45-0.7N/mm. The variations in silicones were detected using a standard colour analysis technique. Calibration curves were then created relating colour intensity to individual material properties. All eleven materials were characterised and a 1st order Ogden strain energy function applied. Material coefficients were determined and examined for effectiveness. Six idealised abdominal aortic aneurysm models were also created using the two base materials of the study, with a further model created using a new mixing technique to create a rubber model with randomly assigned material properties. These models were then examined using videoextensometry and compared to numerical results. Colour analysis revealed a statistically significant linear relationship (p<0.0009) with both tensile strength and tear strength, allowing material strength to be determined using a non-destructive experimental technique. The effectiveness of this technique was assessed by comparing predicted material properties to experimentally measured methods, with good agreement in the results. Videoextensometry and numerical modelling revealed minor percentage differences, with all results achieving significance (p<0.0009). This study has successfully designed and developed a range of silicone rubbers that have unique colour intensities and material strengths. Strengths can be readily determined using a non-destructive analysis technique with proven effectiveness. These silicones may further aid towards an improved understanding of the biomechanical behaviour of aneurysms using experimental techniques. PMID:19595622

Dielectric and transport properties of thin films precipitated from sols with silicon nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kononov, N. N., E-mail: nnk@kapella.gpi.ru; Dorofeev, S. G.; Ishchenko, A. A.

2011-08-15

Dielectric properties of thin films precipitated on solid substrates from colloidal solutions containing silicon nanoparticles (average diameter is 10 nm) are studied by optical ellipsometry and impedance-spectroscopy. In the optical region, the values of real {epsilon} Prime and imaginary {epsilon} Double-Prime components of the complex permittivity {epsilon} vary within 2.1-1.1 and 0.25-0.75, respectively. These values are significantly lower than those of crystalline silicon. Using numerical simulation within the Bruggeman effective medium approximation, we show that the experimental {epsilon} Prime and {epsilon} Double-Prime spectra can be explained with good accuracy, assuming that the silicon film is a porous medium consisting ofmore » silicon monoxide (SiO) and air voids at a void ratio of 0.5. Such behavior of films is mainly caused by the effect of outer shells of silicon nanoparticles interacting with atmospheric oxygen on their dielectric properties. In the frequency range of 10-10{sup 6} Hz, the experimentally measured {epsilon} Prime and {epsilon} Double-Prime spectra of thin nanoscale silicon films are well approximated by the semi-empirical Cole-Cole dielectric dispersion law with the term related to free electric charges. The experimentally determined power-law frequency dependence of the ac conductivity means that the electrical transport in films is controlled by electric charge hopping through localized states in the unordered medium of outer shells of silicon nanoparticles composing films. It is found that the film conductivity at frequencies of {<=}2 Multiplication-Sign 10{sup 2} Hz is controlled by proton transport through Si-OH groups on the silicon nanoparticle surface.« less

Flat-plate solar array project. Task 1: Silicon material: Investigation of the hydrochlorination of SiC1sub4

NASA Technical Reports Server (NTRS)

Mui, J. Y. P.

1981-01-01

A two inch-diameter stainless steel reactor was designed to operate at pressure up to 500 psig and at temperature up to 600 C in order to study the hydrochlorination of silicon tetrachloride and metallurgical grade (m.g.) silicon metal to trichlorosilane. The hydrochlorination apparatus is described and operation safety and pollution control are discussed.

Thermoelectric properties of nanostructured porous silicon

NASA Astrophysics Data System (ADS)

Martín-Palma, R. J.; Cabrera, H.; Martín-Adrados, B.; Korte, D.; Pérez-Cappe, E.; Mosqueda, Y.; Frutis, M. A.; Danguillecourt, E.

2018-01-01

In this work we report on the thermoelectric properties of nanostructured porous silicon (nanoPS) layers grown onto silicon substrates. More specifically, nanoPS layers of different porosity, nanocrystal size, and thickness were fabricated and their electrical conductivities, Seebeck coefficients, and thermal conductivities were subsequently measured. It was found that these parameters show a strong dependence on the characteristics of the nanoPS layers and thus can be controlled.

Dip-Coating Fabrication of Solar Cells

NASA Technical Reports Server (NTRS)

Koepke, B.; Suave, D.

1982-01-01

Inexpensive silicon solar cells made by simple dip technique. Cooling shoes direct flow of helium on graphite-coated ceramic substrate to solidify film of liquid silicon on graphite surface as substrate is withdrawn from molten silicon. After heaters control cooling of film and substrate to prevent cracking. Gas jets exit at points about 10 mm from substrate surfaces and 6 to 10 mm above melt surface.

The time and temperature dependence of the thermoelectric properties of silicon-germanium alloy

NASA Technical Reports Server (NTRS)

Raag, V.

1975-01-01

Experimental data on the electrical resistivity and Seebeck coefficient of n-type and p-type silicon-germanium alloys are analyzed in terms of a solid-state dopant precipitation model proposed by Lifshitz and Slyozov (1961). Experimental findings on the time and temperature dependence of the thermal conductivity of these two types of alloy indicate that the thermal conductivity of silicon-germanium alloys changes with time, contrary to previous hypothesis. A preliminary model is presented which stipulates that the observed thermal conductivity decrease in silicon-germanium alloys is due partly to dopant precipitation underlying the electrical property changes and partly to enhanced alloying of the material. It is significant that all three properties asymptotically approach equilibrium values with time. Total characterization of these properties will enable the time change to be fully compensated in the design of a thermoelectric device employing silicon-germanium alloys.

Confined in-fiber solidification and structural control of silicon and silicon−germanium microparticles

PubMed Central

Gumennik, Alexander; Levy, Etgar C.; Grena, Benjamin; Hou, Chong; Rein, Michael; Abouraddy, Ayman F.; Joannopoulos, John D.; Fink, Yoel

2017-01-01

Crystallization of microdroplets of molten alloys could, in principle, present a number of possible morphological outcomes, depending on the symmetry of the propagating solidification front and its velocity, such as axial or spherically symmetric species segregation. However, because of thermal or constitutional supercooling, resulting droplets often only display dendritic morphologies. Here we report on the crystallization of alloyed droplets of controlled micrometer dimensions comprising silicon and germanium, leading to a number of surprising outcomes. We first produce an array of silicon−germanium particles embedded in silica, through capillary breakup of an alloy-core silica-cladding fiber. Heating and subsequent controlled cooling of individual particles with a two-wavelength laser setup allows us to realize two different morphologies, the first being a silicon−germanium compositionally segregated Janus particle oriented with respect to the illumination axis and the second being a sphere made of dendrites of germanium in silicon. Gigapascal-level compressive stresses are measured within pure silicon solidified in silica as a direct consequence of volume-constrained solidification of a material undergoing anomalous expansion. The ability to generate microspheres with controlled morphology and unusual stresses could pave the way toward advanced integrated in-fiber electronic or optoelectronic devices. PMID:28642348

Design, modeling and simulation of MEMS-based silicon Microneedles

NASA Astrophysics Data System (ADS)

Amin, F.; Ahmed, S.

2013-06-01

The advancement in semiconductor process engineering and nano-scale fabrication technology has made it convenient to transport specific biological fluid into or out of human skin with minimum discomfort. Fluid transdermal delivery systems such as Microneedle arrays are one such emerging and exciting Micro-Electro Mechanical System (MEMS) application which could lead to a total painless fluid delivery into skin with controllability and desirable yield. In this study, we aimed to revisit the problem with modeling, design and simulations carried out for MEMS based silicon hollow out of plane microneedle arrays for biomedical applications particularly for transdermal drug delivery. An approximate 200 μm length of microneedle with 40 μm diameter of lumen has been successfully shown formed by isotropic and anisotropic etching techniques using MEMS Pro design tool. These microneedles are arranged in size of 2 × 4 matrix array with center to center spacing of 750 μm. Furthermore, comparisons for fluid flow characteristics through these microneedle channels have been modeled with and without the contribution of the gravitational forces using mathematical models derived from Bernoulli Equation. Physical Process simulations have also been performed on TCAD SILVACO to optimize the design of these microneedles aligned with the standard Si-Fabrication lines.

Colloidal synthesis of silicon nanoparticles in molten salts.

PubMed

Shavel, A; Guerrini, L; Alvarez-Puebla, R A

2017-06-22

Silicon nanoparticles are unique materials with applications in a variety of fields, from electronics to catalysis and biomedical uses. Despite technological advancements in nanofabrication, the development of a simple and inexpensive route for the synthesis of homogeneous silicon nanoparticles remains highly challenging. Herein, we describe a new, simple and inexpensive colloidal synthetic method for the preparation, under normal pressure and mild temperature conditions, of relatively homogeneous spherical silicon nanoparticles of either ca. 4 or 6 nm diameter. The key features of this method are the selection of a eutectic salt mixture as a solvent, the identification of appropriate silicon alkoxide precursors, and the unconventional use of alkali earth metals as shape-controlling agents.

Method for Molding Structural Parts Utilizing Modified Silicone Rubber

NASA Technical Reports Server (NTRS)

Weiser, Erik S. (Inventor); Baucom, Robert M. (Inventor); Snoha, John J. (Inventor)

1998-01-01

This invention improves upon a method for molding structural parts from preform material. Preform material to be used for the part is provided. A silicone rubber composition containing entrained air voids is prepared. The silicone rubber and preform material assembly is situated within a rigid mold cavity used to shape the preform material to die desired shape. The entire assembly is heated in a standard heating device so that the thermal expansion of the silicone rubber exerts the pressure necessary to force the preform material into contact with the mold container. The introduction of discrete air voids into the silicone rubber allows for accurately controlled pressure application on the preform material at the cure temperature.

Method of forming silicon structures with selectable optical characteristics

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor); Schowalter, Leo (Inventor)

1993-01-01

Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow particles of metal silicide embedded in a matrix of single crystal epitaxially grown silicon. The particles interact with incident photons by resonant optical absorption at the surface plasmon resonance frequency. Controlling the substrate temperature and deposition rate and time allows the aspect ratio of the particles to be tailored to desired wavelength photons and polarizations. The plasmon energy may decay as excited charge carriers or phonons, either of which can be monitored to indicate the amount of incident radiation at the selected frequency and polarization.

Examination of the Position Accuracy of Implant Abutments Reproduced by Intra-Oral Optical Impression

PubMed Central

Odaira, Chikayuki; Kobayashi, Takuya; Kondo, Hisatomo

2016-01-01

An impression technique called optical impression using intraoral scanner has attracted attention in digital dentistry. This study aimed to evaluate the accuracy of the optical impression, comparing a virtual model reproduced by an intraoral scanner to a working cast made by conventional silicone impression technique. Two implants were placed on a master model. Working casts made of plaster were fabricated from the master model by silicone impression. The distance between the ball abutments and the angulation between the healing abutments of 5 mm and 7 mm height at master model were measured using Computer Numerical Control Coordinate Measuring Machine (CNCCMM) as control. Working casts were then measured using CNCCMM, and virtual models via stereo lithography data of master model were measured by a three-dimensional analyzing software. The distance between ball abutments of the master model was 9634.9 ± 1.2 μm. The mean values of trueness of the Lava COS and working casts were 64.5 μm and 22.5 μm, respectively, greater than that of control. The mean of precision values of the Lava COS and working casts were 15.6 μm and 13.5 μm, respectively. In the case of a 5-mm-height healing abutment, mean angulation error of the Lava COS was greater than that of the working cast, resulting in significant differences in trueness and precision. However, in the case of a 7-mm-height abutment, mean angulation errors of the Lava COS and the working cast were not significantly different in trueness and precision. Therefore, distance errors of the optical impression were slightly greater than those of conventional impression. Moreover, the trueness and precision of angulation error could be improved in the optical impression using longer healing abutments. In the near future, the development of information technology could enable improvement in the accuracy of the optical impression with intraoral scanners. PMID:27706225

A computational workflow for designing silicon donor qubits

DOE PAGES

Humble, Travis S.; Ericson, M. Nance; Jakowski, Jacek; ...

2016-09-19

Developing devices that can reliably and accurately demonstrate the principles of superposition and entanglement is an on-going challenge for the quantum computing community. Modeling and simulation offer attractive means of testing early device designs and establishing expectations for operational performance. However, the complex integrated material systems required by quantum device designs are not captured by any single existing computational modeling method. We examine the development and analysis of a multi-staged computational workflow that can be used to design and characterize silicon donor qubit systems with modeling and simulation. Our approach integrates quantum chemistry calculations with electrostatic field solvers to performmore » detailed simulations of a phosphorus dopant in silicon. We show how atomistic details can be synthesized into an operational model for the logical gates that define quantum computation in this particular technology. In conclusion, the resulting computational workflow realizes a design tool for silicon donor qubits that can help verify and validate current and near-term experimental devices.« less

Naturally occurring 32Si and low-background silicon dark matter detectors

DOE PAGES

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; ...

2018-02-10

Here, the naturally occurring radioisotope 32Si represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of 32Si and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the 32Si concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon “ore” and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude thatmore » production of 32Si-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in 32Si. To quantitatively evaluate the 32Si content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon detectors with low levels of 32Si, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.« less

Naturally occurring 32Si and low-background silicon dark matter detectors

NASA Astrophysics Data System (ADS)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; Bunker, Raymond; Finch, Zachary S.

2018-05-01

The naturally occurring radioisotope 32Si represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of 32Si and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the 32Si concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon "ore" and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that production of 32Si-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in 32Si. To quantitatively evaluate the 32Si content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon detectors with low levels of 32Si, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.

Naturally occurring 32Si and low-background silicon dark matter detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary

Here, the naturally occurring radioisotope 32Si represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of 32Si and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the 32Si concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon “ore” and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude thatmore » production of 32Si-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in 32Si. To quantitatively evaluate the 32Si content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon detectors with low levels of 32Si, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.« less

Naturally occurring 32 Si and low-background silicon dark matter detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary

The naturally occurring radioisotope Si-32 represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of Si-32 and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the Si-32 concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon “ore” and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that productionmore » of Si-32-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in Si-32. To quantitatively evaluate the Si-32 content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon-based detectors with low levels of Si-32, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.« less

Microhardness of carbon-doped (111) p-type Czochralski silicon

NASA Technical Reports Server (NTRS)

Danyluk, S.; Lim, D. S.; Kalejs, J.

1985-01-01

The effect of carbon on (111) p-type Czochralski silicon is examined. The preparation of the silicon and microhardness test procedures are described, and the equation used to determine microhardness from indentations in the silicon wafers is presented. The results indicate that as the carbon concentration in the silicon increases the microhardness increases. The linear increase in microhardness is the result of carbon hindering dislocation motion, and the effect of temperature on silicon deformation and dislocation mobility is explained. The measured microhardness was compared with an analysis which is based on dislocation pinning by carbon; a good correlation was observed. The Labusch model for the effect of pinning sites on dislocation motion is given.

Methods of Measurement for Semiconductor Materials, Process Control, and Devices

NASA Technical Reports Server (NTRS)

Bullis, W. M. (Editor)

1973-01-01

The development of methods of measurement for semiconductor materials, process control, and devices is reported. Significant accomplishments include: (1) Completion of an initial identification of the more important problems in process control for integrated circuit fabrication and assembly; (2) preparations for making silicon bulk resistivity wafer standards available to the industry; and (3) establishment of the relationship between carrier mobility and impurity density in silicon. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers, including gold, in silicon; evaluation of wire bonds and die attachment; study of scanning electron microscopy for wafer inspection and test; measurement of thermal properties of semiconductor devices; determination of S-parameters and delay time in junction devices; and characterization of noise and conversion loss of microwave detector diodes.

Modeling silicon diode energy response factors for use in therapeutic photon beams.

PubMed

Eklund, Karin; Ahnesjö, Anders

2009-10-21

Silicon diodes have good spatial resolution, which makes them advantageous over ionization chambers for dosimetry in fields with high dose gradients. However, silicon diodes overrespond to low-energy photons, that are more abundant in scatter which increase with large fields and larger depths. We present a cavity-theory-based model for a general response function for silicon detectors at arbitrary positions within photon fields. The model uses photon and electron spectra calculated from fluence pencil kernels. The incident photons are treated according to their energy through a bipartition of the primary beam photon spectrum into low- and high-energy components. Primary electrons from the high-energy component are treated according to Spencer-Attix cavity theory. Low-energy primary photons together with all scattered photons are treated according to large cavity theory supplemented with an energy-dependent factor K(E) to compensate for energy variations in the electron equilibrium. The depth variation of the response for an unshielded silicon detector has been calculated for 5 x 5 cm(2), 10 x 10 cm(2) and 20 x 20 cm(2) fields in 6 and 15 MV beams and compared with measurements showing that our model calculates response factors with deviations less than 0.6%. An alternative method is also proposed, where we show that one can use a correlation with the scatter factor to determine the detector response of silicon diodes with an error of less than 3% in 6 MV and 15 MV photon beams.

N-Type delta Doping of High-Purity Silicon Imaging Arrays

NASA Technical Reports Server (NTRS)

Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

2005-01-01

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.

Development of a Model and Computer Code to Describe Solar Grade Silicon Production Processes

NASA Technical Reports Server (NTRS)

Srivastava, R.; Gould, R. K.

1979-01-01

The program aims at developing mathematical models and computer codes based on these models, which allow prediction of the product distribution in chemical reactors for converting gaseous silicon compounds to condensed-phase silicon. The major interest is in collecting silicon as a liquid on the reactor walls and other collection surfaces. Two reactor systems are of major interest, a SiCl4/Na reactor in which Si(l) is collected on the flow tube reactor walls and a reactor in which Si(l) droplets formed by the SiCl4/Na reaction are collected by a jet impingement method. During this quarter the following tasks were accomplished: (1) particle deposition routines were added to the boundary layer code; and (2) Si droplet sizes in SiCl4/Na reactors at temperatures below the dew point of Si are being calculated.

In-house manufacturing of cylindrical silicone models for hemodynamic research

NASA Astrophysics Data System (ADS)

Denisenko, Nikita S.; Kulik, Viktor M.

2017-10-01

Laboratory studies of fluid motion in artificial vessels modeling a distinct part of circulatory system of human are of a great importance for fundamental biomechanics and for medical applications. In the medicine they are used for advancing known and developing new methods for curing cardiovascular diseases. In biomechanics, the phantoms of blood vessels are used for studying the fluid motion. However, they are quite expensive. Therefore, a development of technique for in-house manufacturing of phantoms is quite attractive. In this paper methods of manufacturing cylindrical channels of silicone rubbers (the model of the straight part of an artery) and determination of their elastic properties are described. A specially developed acrylic mold is used for this purpose. The phantoms are cast from a mixture of SKTN-A silicone and PMS-5 oil (Penta-91, Novosibirsk, Russia). The oil is used for changing elasticity properties of the silicone.

The effect of primary recoil spectrum on radiation induced segregation in nickel-silicon alloys

NASA Astrophysics Data System (ADS)

Averback, R. S.; Rehn, L. E.; Wagner, W.; Ehrhart, P.

1983-08-01

Segregation of silicon to the surface of Ni-12.7 at% Si alloys during 2.0-MeV He and 3.25-MeV Kr irradiations was measured using Rutherford backscattering spectrometry. For equal calculated defect production rates the Kr irradiation was < 3 % as efficient as the He irradiation for promoting segregation in the temperature range, 450 °C-580 °C. It was further observed that Kr preirradiation of specimens dramatically reduced segregation during subsequent He irradiation. A model for cascade annealing in Ni-Si alloys is presented which qualitatively explains the segregation results. The model assumes that small interstitial-atom-clusters form in individual cascades and that these clusters become trapped at silicon solute atoms. The vacancy thereby becomes the more mobile defect. The model should also have relevance for the observation that void swelling in nickel is suppressed by the addition of silicon solute.

Nanowebs and nanocables of silicon carbide

NASA Astrophysics Data System (ADS)

Shim, Hyun Woo; Huang, Hanchen

2007-08-01

This paper presents two novel hierarchical structures of SiC-SiO2 core-shell nanowires: (a) nanocables in the form of multi-core and single shell and (b) nanowebs in the form of intersecting nanowires and nanocables, augmented by variable amounts of SiO2 membranes. The two structures are controllable through variations of substrate temperature and source chemistry. The hierarchical nanostructures, together with the controllability, may offer superb mechanical properties in composite applications. Finally, the authors propose a model of nanowebs and nanocables formation, as a result of nanowires intersection and alignment.

Design of a CO2 laser power control system for a Spacelab microgravity experiment

NASA Technical Reports Server (NTRS)

Wenzler, Carl J.; Eichenberg, Dennis J.

1990-01-01

The surface tension driven convection experiment (STDCE) is a Space Transportation System flight experiment manifested to fly aboard the USML-1 Spacelab mission. A CO2 laser is used to heat a spot on the surface of silicone oil contained inside a test chamber. Several CO2 laser control systems were evaluated and the selected system will be interfaced with the balance of the experimental hardware to constitute a working engineering model. Descriptions and a discussion of these various design approaches are presented.

From cells to laminate: probing and modeling residual stress evolution in thin silicon photovoltaic modules using synchrotron X-ray micro-diffraction experiments and finite element simulations

DOE PAGES

Tippabhotla, Sasi Kumar; Radchenko, Ihor; Song, W. J. R.; ...

2017-04-12

Fracture of silicon crystalline solar cells has recently been observed in increasing percentages especially in solar photovoltaic (PV) modules involving thinner silicon solar cells (<200 μm). Many failures due to fracture have been reported from the field because of environmental loading (snow, wind, etc.) as well as mishandling of the solar PV modules (during installation, maintenance, etc.). However, a significantly higher number of failures have also been reported during module encapsulation (lamination) indicating high residual stress in the modules and thus more prone to cell cracking. Here in this paper we report through the use of synchrotron X-ray submicron diffractionmore » coupled with physics-based finite element modeling, the complete residual stress evolution in mono-crystalline silicon solar cells during PV module integration process. For the first time, we unravel the reason for the high stress and cracking of silicon cells near soldered inter-connects. Our experiments revealed a significant increase of residual stress in the silicon cell near the solder joint after lamination. Moreover, our finite element simulations show that this increase of stress during lamination is a result of highly localized bending of the cell near the soldered inter-connects. Further, the synchrotron X-ray submicron diffraction has proven to be a very effective way to quantitatively probe mechanical stress in encapsulated silicon solar cells. Thus, this technique has ultimately enabled these findings leading to the enlightening of the role of soldering and encapsulation processes on the cell residual stress. This model can be further used to suggest methodologies that could lead to lower stress in encapsulated silicon solar cells, which are the subjects of our continued investigations.« less

From cells to laminate: probing and modeling residual stress evolution in thin silicon photovoltaic modules using synchrotron X-ray micro-diffraction experiments and finite element simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tippabhotla, Sasi Kumar; Radchenko, Ihor; Song, W. J. R.

Fracture of silicon crystalline solar cells has recently been observed in increasing percentages especially in solar photovoltaic (PV) modules involving thinner silicon solar cells (<200 μm). Many failures due to fracture have been reported from the field because of environmental loading (snow, wind, etc.) as well as mishandling of the solar PV modules (during installation, maintenance, etc.). However, a significantly higher number of failures have also been reported during module encapsulation (lamination) indicating high residual stress in the modules and thus more prone to cell cracking. Here in this paper we report through the use of synchrotron X-ray submicron diffractionmore » coupled with physics-based finite element modeling, the complete residual stress evolution in mono-crystalline silicon solar cells during PV module integration process. For the first time, we unravel the reason for the high stress and cracking of silicon cells near soldered inter-connects. Our experiments revealed a significant increase of residual stress in the silicon cell near the solder joint after lamination. Moreover, our finite element simulations show that this increase of stress during lamination is a result of highly localized bending of the cell near the soldered inter-connects. Further, the synchrotron X-ray submicron diffraction has proven to be a very effective way to quantitatively probe mechanical stress in encapsulated silicon solar cells. Thus, this technique has ultimately enabled these findings leading to the enlightening of the role of soldering and encapsulation processes on the cell residual stress. This model can be further used to suggest methodologies that could lead to lower stress in encapsulated silicon solar cells, which are the subjects of our continued investigations.« less

Controllable Change of Photoluminescence Spectra of Silicone Rubber Modified by 193 nm ArF Excimer Laser

NASA Astrophysics Data System (ADS)

Okoshi, Masayuki; Iyono, Minako; Inoue, Narumi

2009-12-01

Photoluminescence spectra of silicone rubber ([SiO(CH3)2]n) photochemically modified by a 193 nm ArF excimer laser was found to be controllable. Compared with the modification in air, the photoluminescence spectra could be blueshifted by the modification in vacuum or the additional irradiation of ArF excimer laser in vacuum after the modification in air. To redshift, on the other hand, the additional irradiation of a 157 nm F2 laser in air after the modification in air, the modification in oxygen gas, or the postannealing after the modification in oxygen gas was effective. The blue and redshifts of the photoluminescence were essentially due to the acceleration of reduction and oxidation reactions of silicone rubber, respectively, because the photoluminescence derives its origin from oxygen deficiency centers and peroxy centers of the silica structure in the modified silicone rubber. On the basis of the spectra changes, colorful light-guiding sheets made of silicone rubber under illumination of a 375 nm light-emitting diode were successfully fabricated for cellular phone use.

[Effect of nano-silica coating on bonding strength of zirconia ceramics to dentin].

PubMed

Zhang, Xian-Fang; Zheng, Hu; Han, Dong-Wei

2009-04-01

To investigate the effect of silica coating by sol-gel process on bonding strength of zirconia ceramics to dentin. Blocks of sintered zirconia ceramics were cut and randomly divided into 4 groups,16 slices in each group. Each group was subject to one of the 4 kinds of surface treatment (control group, sandblasting, sandblasting +silicone, sandblasting + silica coating + silicone) and then bonded to dentin with resin cement. After preservation in 37 degrees centigrade distilled water for 24 hours, the shear bonding strength of these specimens was tested and the data was analyzed with SAS6.12 software package for analysis of variance. The surface modality of the ceramics was observed under scanning electron microscopy (SEM). The group of sandblasting+ silica coating + silicone attained the highest shear bonding strength, which was significantly different from the other groups(P=0.000);There was no significant difference between the sandblasting and sandblasting + silicone group (P=0.827), which was significantly different from the control group(P=0.001). Silica coating by sol-gel process, coupled with silicone, can significantly increase the bonding strength of zirconia ceramics to dentin.

Preparation and characterization of a novel silicon-modified nanobubble

PubMed Central

Li, Maotong; Zhou, Meijun; Li, Fei; Huang, Xiuxian; Pan, Min; Xue, Li

2017-01-01

Nanobubbles (NBs) opened a new field of ultrasound imaging. There is still no practical method to control the diameter of bubbles. In this study, we developed a new method to control the size by incorporating of silicon hybrid lipids into the bubble membrane. The range of particle size of resulting NBs is between 523.02 ± 46.45 to 857.18 ± 82.90, smaller than the conventional microbubbles. The size of resulting NBs increased with the decrease in amount of silicon hybrid lipids, indicating the diameter of NBs can be regulated through modulating the ratio of silicon hybrid lipids in the bubble shell. Typical harmonic signals could be detected. The in vitro and in vivo ultrasound imaging experiments demonstrated these silicon-modified NBs had significantly improved ultrasound contrast enhancement abilities. Cytotoxicity assays revealed that these NBs had no obvious cytotoxicity to the 293 cell line at the tested bubble concentration. Our results showed that the novel NBs could use as nanoscale ultrasound contrast agents, providing the foundation for NBs in future applications including contrast-enhanced imaging and drug/gene delivery. PMID:28557995

Plastic Deformation of Micromachined Silicon Diaphragms with a Sealed Cavity at High Temperatures

PubMed Central

Ren, Juan; Ward, Michael; Kinnell, Peter; Craddock, Russell; Wei, Xueyong

2016-01-01

Single crystal silicon (SCS) diaphragms are widely used as pressure sensitive elements in micromachined pressure sensors. However, for harsh environments applications, pure silicon diaphragms are hardly used because of the deterioration of SCS in both electrical and mechanical properties. To survive at the elevated temperature, the silicon structures must work in combination with other advanced materials, such as silicon carbide (SiC) or silicon on insulator (SOI), for improved performance and reduced cost. Hence, in order to extend the operating temperatures of existing SCS microstructures, this work investigates the mechanical behavior of pressurized SCS diaphragms at high temperatures. A model was developed to predict the plastic deformation of SCS diaphragms and was verified by the experiments. The evolution of the deformation was obtained by studying the surface profiles at different anneal stages. The slow continuous deformation was considered as creep for the diaphragms with a radius of 2.5 mm at 600 °C. The occurrence of plastic deformation was successfully predicted by the model and was observed at the operating temperature of 800 °C and 900 °C, respectively. PMID:26861332

Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Chang, E-mail: chang.sun@anu.edu.au; Rougieux, Fiacre E.; Macdonald, Daniel

2014-06-07

Injection-dependent lifetime spectroscopy of both n- and p-type, Cr-doped silicon wafers with different doping levels is used to determine the defect parameters of Cr{sub i} and CrB pairs, by simultaneously fitting the measured lifetimes with the Shockley-Read-Hall model. A combined analysis of the two defects with the lifetime data measured on both n- and p-type samples enables a significant tightening of the uncertainty ranges of the parameters. The capture cross section ratios k = σ{sub n}/σ{sub p} of Cr{sub i} and CrB are determined as 3.2 (−0.6, +0) and 5.8 (−3.4, +0.6), respectively. Courtesy of a direct experimental comparison of the recombinationmore » activity of chromium in n- and p-type silicon, and as also suggested by modelling results, we conclude that chromium has a greater negative impact on carrier lifetimes in p-type silicon than n-type silicon with similar doping levels.« less

Modelling of heating and photoexcitation of single-crystal silicon under multipulse irradiation by a nanosecond laser at 1.06 μm

NASA Astrophysics Data System (ADS)

Polyakov, D. S.; Yakovlev, E. B.

2018-03-01

We report a theoretical study of heating and photoexcitation of single-crystal silicon by nanosecond laser radiation at a wavelength of 1.06 μm. The proposed physicomathematical model of heating takes into account the complex nonlinear dynamics of the interband absorption coefficient of silicon and the contribution of the radial heat removal to the cooling of silicon between pulses under multipulse irradiation, which allows one to obtain a satisfactory agreement between theoretical predictions of silicon melting thresholds at different nanosecond pulse durations and experimental data (both under single-pulse and multipulse irradiation). It is found that under irradiation by nanosecond pulses at a wavelength of 1.06 μm, the dynamic Burshtein–Moss effect can play an important role in processes of photoexcitation and heating. It is shown that with the regimes typical for laser multipulse microprocessing of silicon (the laser spot diameter is less than 100 μm, and the repetition rate of pulses is about 100 kHz), the radial heat removal cannot be neglected in the analysis of heat accumulation processes.

Silicon graphene Bragg gratings.

PubMed

Capmany, José; Domenech, David; Muñoz, Pascual

2014-03-10

We propose the use of interleaved graphene sections on top of a silicon waveguide to implement tunable Bragg gratings. The filter central wavelength and bandwidth can be controlled changing the chemical potential of the graphene sections. Apodization techniques are also presented.

Non-Toxic, Self Cleaning Silicone Fouling Release Coatings

DTIC Science & Technology

1997-10-07

Attempts to microencapsulate silicone oils for enhanced fouling release coatings with thermoset wall structures were unsuccessful: Microcapsule ...filled coatings failed abrasion resistance tests and had mediocre fouling release properties, despite having controlled release rates. Microcapsules with

Effect of argon implantation on solid-state dewetting: control of size and surface density of silicon nanocrystals.

PubMed

Almadori, Y; Borowik, Ł; Chevalier, N; Barbé, J-C

2017-01-27

Thermally induced solid-state dewetting of ultra-thin films on insulators is a process of prime interest, since it is capable of easily forming nanocrystals. If no particular treatment is performed to the film prior to the solid-state dewetting, it is already known that the size, the shape and the density of nanocrystals is governed by the initial film thickness. In this paper, we report a novel approach to control the size and the surface density of silicon nanocrystals based on an argon-implantation preliminary surface treatment. Using 7.5 nm thin layers of silicon, we show that increasing the implantation dose tends to form smaller silicon nanocrystals with diameter and height lower than 50 nm and 30 nm, respectively. Concomitantly, the surface density is increased by a factor greater than 20, going from 5 μm -2 to values over 100 μm -2 .

Silicon Qubits

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ladd, Thaddeus D.; Carroll, Malcolm S.

2018-02-28

Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of amore » single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.« less

Electrically driven spin qubit based on valley mixing

NASA Astrophysics Data System (ADS)

Huang, Wister; Veldhorst, Menno; Zimmerman, Neil M.; Dzurak, Andrew S.; Culcer, Dimitrie

2017-02-01

The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and can also be easier to produce. Here we outline the mechanism for a drastic enhancement in the electrically-driven spin rotation frequency for silicon quantum dot qubits in the presence of a step at a heterointerface. The enhancement is due to the strong coupling between the ground and excited states which occurs when the electron wave function overcomes the potential barrier induced by the interface step. We theoretically calculate single qubit gate times tπ of 170 ns for a quantum dot confined at a silicon/silicon-dioxide interface. The engineering of such steps could be used to achieve fast electrical rotation and entanglement of spin qubits despite the weak spin-orbit coupling in silicon.

Elemental Education.

ERIC Educational Resources Information Center

Daniel, Esther Gnanamalar Sarojini; Saat, Rohaida Mohd.

2001-01-01

Introduces a learning module integrating three disciplines--physics, chemistry, and biology--and based on four elements: carbon, oxygen, hydrogen, and silicon. Includes atomic model and silicon-based life activities. (YDS)

Ultra-Shallow Depth Profiling of Arsenic Implants in Silicon by Hydride Generation-Inductively Coupled Plasma Atomic Emission Spectrometry

NASA Astrophysics Data System (ADS)

Matsubara, Atsuko; Kojima, Hisao; Itoga, Toshihiko; Kanehori, Keiichi

1995-08-01

High resolution depth profiling of arsenic (As) implanted into silicon wafers by a chemical technique is described. Silicon wafers are precisely etched through repeated oxidation by hydrogen peroxide solution and dissolution of the oxide by hydrofluoric acid solution. The etched silicon thickness is determined by inductively-coupled plasma atomic emission spectrometry (ICP-AES). Arsenic concentration is determined by hydride generation ICP-AES (HG-ICP-AES) with prereduction using potassium iodide. The detection limit of As in a 4-inch silicon wafer is 2.4×1018 atoms/cm3. The etched silicon thickness is controlled to less than 4±2 atomic layers. Depth profiling of an ultra-shallow As diffusion layer with the proposed method shows good agreement with profiling using the four-probe method or secondary ion mass spectrometry.

Flat-plate solar array project. Volume 3: Silicon sheet: Wafers and ribbons

NASA Technical Reports Server (NTRS)

Briglio, A.; Dumas, K.; Leipold, M.; Morrison, A.

1986-01-01

The primary objective of the Silicon Sheet Task of the Flat-Plate Solar Array (FSA) Project was the development of one or more low cost technologies for producing silicon sheet suitable for processing into cost-competitive solar cells. Silicon sheet refers to high purity crystalline silicon of size and thickness for fabrication into solar cells. Areas covered in the project were ingot growth and casting, wafering, ribbon growth, and other sheet technologies. The task made and fostered significant improvements in silicon sheet including processing of both ingot and ribbon technologies. An additional important outcome was the vastly improved understanding of the characteristics associated with high quality sheet, and the control of the parameters required for higher efficiency solar cells. Although significant sheet cost reductions were made, the technology advancements required to meet the task cost goals were not achieved.

Bed isolation in experimental flap studies in rats: a dispensable procedure.

PubMed

Heimer, Sina; Schaefer, Amelia; Mueller, Wolf; Lass, Ulrike; Gebhard, Martha M; Germann, Günter; Leimer, Uwe; Köllensperger, Eva; Reichenberger, Matthias A

2013-03-01

Review of the literature regarding rodent experimental flap models reveals fundamental differences in applied surgical procedures. Although some authors isolate the flap from its wound bed, others do not. This study was planned to investigate to what extent the insertion of a silicone sheet affects physiological wound healing in experimental flap surgery. An extended epigastric adipocutaneous flap (6 × 10 cm) was raised in 16 male Lewis rats. In the control group (group C), flaps were immediately inset without any intervention. In the experimental group (group M), a silicone sheet barrier was placed between the flap and the wound bed. Mean flap survival area and flap perfusion were evaluated. Microvessel density was visualized by immunohistochemistry, and semiquantitative real-time polymerase chain reaction addressed differential gene expression. All animals were investigated on postoperative day 5. Flap survival area and flap perfusion were found to be similar. Immunohistochemistry, however, demonstrated a significantly increased number of CD31-positive small vessels in group C. The insertion of the silicone sheet barrier (group M) was accompanied by a significantly enhanced expression of proinflammatory genes and a suppression of proangiogenic genes. Our results show that although the silicone membrane has no influence on the surgical outcome in terms of flap survival and perfusion, it does lead to significant molecular alterations in pathways involved in physiological wound healing. These alterations are artificially induced by the foreign body material and conceal the true driving forces of the healing process. As the latter might include relevant therapeutic targets to ameliorate surgical results, we regard wound bed isolation as a dispensable procedure in the study of rodent flap models.

Use of silicon carbide sludge to form porous alkali-activated materials for insulating application

NASA Astrophysics Data System (ADS)

Prud'homme, E.; Joussein, E.; Rossignol, S.

2015-07-01

One of the objectives in the field of alkali-activated materials is the development of materials having greater thermal performances than conventional construction materials such as aerated concrete. The aim of this paper is to present the possibility to obtain controlled porosity and controlled thermal properties with geopolymer materials including a waste like silicon carbide sludge. The porosity is created by the reaction of free silicon contains in silicon carbide sludge leading to the formation of hydrogen. Two possible ways are investigated to control the porosity: modification of mixture formulation and additives introduction. The first way is the most promising and allowed the formation of materials presenting the same density but various porosities, which shows that the material is adaptable to the application. The insulation properties are logically linked to the porosity and density of materials. A lower value of thermal conductivity of 0.075 W.m-1.K-1 can be reached for a material with a low density of 0.27 g.cm-3. These characteristics are really good for a mineral-based material which always displays non-negligible resistance to manipulation.

Control of Heat and Charge Transport in Nanostructured Hybrid Materials

DTIC Science & Technology

2015-07-21

measurements in our groups have yielded device ZT values of 0.4 on thermoelectric modules consisting of vertically oriented silicon nanowires . This is... nanowires with aspect ratio’s exceeding 10,000. Temperature differences as high as 800 °C are achievable for both types. The bulk nanostructured...thermal conductivity of the silicon nanostructures. Specifically, experiments on an array of 20 nm diameter vertically oriented silicon nanowires have

Dry Lubrication of High Temperature Silicon Nitride Rolling Contacts.

DTIC Science & Technology

1980-11-01

comparable to M50 bearing steel [2]. Quality control measures were implemented in the areas of raw material inspection as well as non-destructive evaluation...to oil lubricated bearing steels . Due to the apparent success of graphite at high tem- perature, three vendors were selected that manufacture graph...hybrid bearings ( steel rings and silicon nitride balls) to establish solid lubricant/cage design practices. High temperature bearing tests with silicon

Model Robust Calibration: Method and Application to Electronically-Scanned Pressure Transducers

NASA Technical Reports Server (NTRS)

Walker, Eric L.; Starnes, B. Alden; Birch, Jeffery B.; Mays, James E.

2010-01-01

This article presents the application of a recently developed statistical regression method to the controlled instrument calibration problem. The statistical method of Model Robust Regression (MRR), developed by Mays, Birch, and Starnes, is shown to improve instrument calibration by reducing the reliance of the calibration on a predetermined parametric (e.g. polynomial, exponential, logarithmic) model. This is accomplished by allowing fits from the predetermined parametric model to be augmented by a certain portion of a fit to the residuals from the initial regression using a nonparametric (locally parametric) regression technique. The method is demonstrated for the absolute scale calibration of silicon-based pressure transducers.

Dehydration and dehydroxylation of C-S-H phases synthesized on silicon wafers

NASA Astrophysics Data System (ADS)

Giraudo, Nicolas; Bergdolt, Samuel; Laye, Fabrice; Krolla, Peter; Lahann, Joerg; Thissen, Peter

2018-03-01

In this work, the synthesis of specific ultrathin Calcium-Silicate-Hydrate (C-S-H) phases on silicon wafers and their transformation into C-S phases is achieved. Specific mineral phases are identified, and the synthesis is successful controlled. Samples are investigated by means of Fourier Transform Infrared (FTIR) spectroscopy and X-ray Diffraction (XRD) and the results are analyzed based on first-principles calculations. When C-S-H phases are transformed into C-S phases, only a few reflexes are detected on XRD, and the coherent scattering domains decrease with the increment of the temperature and time of exposure. This behavior is explained by the Ca/Si changes, which are identified by changes in the FTIR spectra. A thermodynamic analysis is performed with the help of first-principles calculations to underline the influence of the calcium-to-silicon (Ca/Si) ratio in the process of dehydroxylation. To increase the Ca/Si ratio water is partially substituted by methanol at the synthesis. This is observed in the FTIR spectra and is confirmed by lower temperatures of dehydroxylation. The catalytic nature of calcium towards the dehydroxylation is confirmed. The core of this work lies in the preparation of a model, which perfection makes possible to model reactivity, stability and mechanical properties using first-principles calculations, and is the starting point for the synthesis of many others.

Model Implementation of Boron Removal Using CaCl2-CaO-SiO2 Slag System for Solar-Grade Silicon

NASA Astrophysics Data System (ADS)

Chen, Hui; Wang, Ye; Zheng, Wenjia; Li, Qincan; Yuan, Xizhi; Morita, Kazuki

2017-12-01

A new CaCl2-CaO-SiO2 slag system was recently proposed to remove boron from metallurgy-grade silicon by oxidized chlorination and evaporation. To further investigate the boron transformation process at a high temperature, a model implementation to present the transfer of boron from molten silicon to the gas phase via slag is introduced. Heat transfer, fluid flow, the chemical reactions at the interface and surface, the mass transfer and diffusion of boron in the molten silicon and slag, and the evaporation of BOCl and CaCl2 were coupled in this model. After the confirmation of the thermal field, other critical parameters, including the boron partition ratios ( L B) for this slag from 1723 K to 1823 K (1450 °C to 1550 °C), the thicknesses of the velocity boundary layer at the surface and interface, the mass transfer coefficients of the boundary layer at the surface and interface, and partial pressure of BOCl in the gas phase were analyzed to determine the rate-limiting step. To verify this model implementation, boron removal experiments were carried out at various temperatures and with various initial mass ratios of slag to silicon ( μ). The evaporation rate of CaCl2 was also measured by thermogravimetry analysis (TGA).

Phonon cross-plane transport and thermal boundary resistance: effect of heat source size and thermal boundary resistance on phonon characteristics

NASA Astrophysics Data System (ADS)

Ali, H.; Yilbas, B. S.

2016-09-01

Phonon cross-plane transport across silicon and diamond thin films pair is considered, and thermal boundary resistance across the films pair interface is examined incorporating the cut-off mismatch and diffusive mismatch models. In the cut-off mismatch model, phonon frequency mismatch for each acoustic branch is incorporated across the interface of the silicon and diamond films pair in line with the dispersion relations of both films. The frequency-dependent and transient solution of the Boltzmann transport equation is presented, and the equilibrium phonon intensity ratios at the silicon and diamond film edges are predicted across the interface for each phonon acoustic branch. Temperature disturbance across the edges of the films pair is incorporated to assess the phonon transport characteristics due to cut-off and diffusive mismatch models across the interface. The effect of heat source size, which is allocated at high-temperature (301 K) edge of the silicon film, on the phonon transport characteristics at the films pair interface is also investigated. It is found that cut-off mismatch model predicts higher values of the thermal boundary resistance across the films pair interface as compared to that of the diffusive mismatch model. The ratio of equilibrium phonon intensity due to the cut-off mismatch over the diffusive mismatch models remains >1 at the silicon edge, while it becomes <1 at the diamond edge for all acoustic branches.

On precursor self-organization upon the microwave vacuum-plasma deposition of submonolayer carbon coatings on silicon (100) crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yafarov, R. K., E-mail: pirpc@yandex.ru

Scanning atomic-force and electron microscopies are used to study the self-organization kinetics of nanoscale domains upon the deposition of submonolayer carbon coatings on silicon (100) in the microwave plasma of low-pressure ethanol vapor. Model mechanisms of how silicon-carbon domains are formed are suggested. The mechanisms are based on Langmuir’s model of adsorption from the precursor state and modern concepts of modification of the equilibrium structure of the upper atomic layer in crystalline semiconductors under the influence of external action.

Nanoparticle light scattering on interferometric surfaces

NASA Astrophysics Data System (ADS)

Hayrapetyan, K.; Arif, K. M.; Savran, C. A.; Nolte, D. D.

2011-03-01

We present a model based on Mie Surface Double Interaction (MSDI) to explore bead-based detection mechanisms using imaging and scanning. The application goal of this work is to explore the trade-offs between the sensitivity and throughput among various detection methods. Experimentally we use thermal oxide on silicon to establish and control surface interferometric conditions. Surface-captured gold beads are detected using Molecular Interferometric Imaging (MI2) and Spinning-Disc Interferometry (SDI).

A Self Consistent RF Discharge, Plasma Chemistry and Surface Model for Plasma Enhanced Chemical Vapor Deposition

DTIC Science & Technology

1988-06-30

consists of three submodels for the electron kinetics, plasma chemistry , and surface deposition kinetics for a-Si:H deposited from radio frequency...properties. Plasma enhanced, Chemical vapor deposition, amorphous silicon, Modeling, Electron kinetics, Plasma chemistry , Deposition kinetics, Rf discharge, Silane, Film properties, Silicon.

Temperature measurement and control system for transtibial prostheses: Functional evaluation.

PubMed

Ghoseiri, Kamiar; Zheng, Yong Ping; Leung, Aaron K L; Rahgozar, Mehdi; Aminian, Gholamreza; Lee, Tat Hing; Safari, Mohammad Reza

2018-01-01

The accumulation of heat inside the prosthetic socket increases skin temperature and fosters perspiration, which consequently leads to high tissue stress, friction blister, discomfort, unpleasant odor, and decreased prosthesis suspension and use. In the present study, the prototype of a temperature measurement and control (TM&C) system was designed, fabricated, and functionally evaluated in a phantom model of the transtibial prosthetic socket. The TM&C system was comprised of 12 thermistors divided equally into two groups that arranged internal and external to a prosthetic silicone liner. Its control system was programmed to select the required heating or cooling function of a thermal pump to provide thermal equilibrium based on the amount of temperature difference from a defined set temperature, or the amount of difference between the mean temperature recorded by inside and outside thermistors. A thin layer of aluminum was used for thermal conduction between the thermal pump and different sites around the silicone liner. The results showed functionality of the TM&C system for thermoregulation inside the prosthetic socket. However, enhancing the structure of this TM&C system, increasing its thermal power, and decreasing its weight and cost are main priorities before further development.

Controlled growth of periodically aligned copper-silicide nanocrystal arrays on silicon directed by laser-induced periodic surface structures (LIPSS)

NASA Astrophysics Data System (ADS)

Nürnberger, Philipp; Reinhardt, Hendrik M.; Rhinow, Daniel; Riedel, René; Werner, Simon; Hampp, Norbert A.

2017-10-01

In this paper we introduce a versatile tool for the controlled growth and alignment of copper-silicide nanocrystals. The method takes advantage of a unique self-organization phenomenon denoted as laser-induced periodic surface structures (LIPSS). Copper films (3 ± 0.2 nm) are sputter-deposited onto single crystal silicon (100) substrates with a thin oxide layer (4 ± 0.2 nm), and subsequently exposed to linearly polarized nanosecond laser pulses (τ ≈ 6 ns) at a central wavelength of 532 nm. The irradiation triggers dewetting of the Cu film and simultaneous formation of periodic Cu nanowires (LIPSS), which partially penetrate the oxide layer to the Si substrate. These LIPSS act as nucleation centers for the growth of Cu-Si crystals during thermal processing at 500 °C under forming gas 95/5 atmosphere. Exemplified by our model system Cu/SiO2/Si, LIPSS are demonstrated to facilitate the diffusion reaction between Cu and underlying Si. Moreover, adjustment of the laser polarization allows us to precisely control the nanocrystal alignment with respect to the LIPSS orientation. Potential applications and conceivable alternatives of this process are discussed.

Functionalization of 2D macroporous silicon under the high-pressure oxidation

NASA Astrophysics Data System (ADS)

Karachevtseva, L.; Kartel, M.; Kladko, V.; Gudymenko, O.; Bo, Wang; Bratus, V.; Lytvynenko, O.; Onyshchenko, V.; Stronska, O.

2018-03-01

Addition functionalization after high-pressure oxidation of 2D macroporous silicon structures is evaluated. X-ray diffractometry indicates formation of orthorhombic SiO2 phase on macroporous silicon at oxide thickness of 800-1200 nm due to cylindrical symmetry of macropores and high thermal expansion coefficient of SiO2. Pb center concentration grows with the splitting energy of LO- and TO-phonons and SiO2 thickness in oxidized macroporous silicon structures. This increase EPR signal amplitude and GHz radiation absorption and is promising for development of high-frequency devices and electronically controlled elements.

Analysis of effects of impurities intentionally incorporated into silicon

NASA Technical Reports Server (NTRS)

Uno, F.

1977-01-01

A methodology was developed and implemented to allow silicon samples containing intentionally incorporated impurities to be fabricated into finished solar cells under carefully controlled conditions. The electrical and spectral properties were then measured for each group processed.

Semiconductor technology program. Progress briefs

NASA Technical Reports Server (NTRS)

Bullis, W. M. (Editor)

1979-01-01

The current status of NBS work on measurement technology for semiconductor materials, process control, and devices is reported. Results of both in-house and contract research are covered. Highlighted activities include modeling of diffusion processes, analysis of model spreading resistance data, and studies of resonance ionization spectroscopy, resistivity-dopant density relationships in p-type silicon, deep level measurements, photoresist sensitometry, random fault measurements, power MOSFET thermal characteristics, power transistor switching characteristics, and gross leak testing. New and selected on-going projects are described. Compilations of recent publications and publications in press are included.

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

NASA Technical Reports Server (NTRS)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

2016-01-01

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

Directed dewetting of amorphous silicon film by a donut-shaped laser pulse.

PubMed

Yoo, Jae-Hyuck; In, Jung Bin; Zheng, Cheng; Sakellari, Ioanna; Raman, Rajesh N; Matthews, Manyalibo J; Elhadj, Selim; Grigoropoulos, Costas P

2015-04-24

Irradiation of a thin film with a beam-shaped laser is proposed to achieve site-selectively controlled dewetting of the film into nanoscale structures. As a proof of concept, the laser-directed dewetting of an amorphous silicon thin film on a glass substrate is demonstrated using a donut-shaped laser beam. Upon irradiation of a single laser pulse, the silicon film melts and dewets on the substrate surface. The irradiation with the donut beam induces an unconventional lateral temperature profile in the film, leading to thermocapillary-induced transport of the molten silicon to the center of the beam spot. Upon solidification, the ultrathin amorphous silicon film is transformed to a crystalline silicon nanodome of increased height. This morphological change enables further dimensional reduction of the nanodome as well as removal of the surrounding film material by isotropic silicon etching. These results suggest that laser-based dewetting of thin films can be an effective way for scalable manufacturing of patterned nanostructures.

Method for forming silicon on a glass substrate

DOEpatents

McCarthy, Anthony M.

1995-01-01

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics.

Method for forming silicon on a glass substrate

DOEpatents

McCarthy, A.M.

1995-03-07

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics. 15 figs.

Silicon cantilever functionalization for cellulose-specific chemical force imaging of switchgrass

DOE PAGES

Lee, Ida; Evans, Barbara R.; Foston, Marcus B.; ...

2015-05-08

A method for direct functionalization of silicon and silicon nitride cantilevers with bifunctional silanes was tested with model surfaces to determine adhesive forces for different hydrogen-bonding chemistries. Application for biomass surface characterization was tested by mapping switchgrass and isolated switchgrass cellulose in topographic and force-volume mode using a cellulose-specific cantilever.

All-optical switch using optically controlled two mode interference coupler.

PubMed

Sahu, Partha Pratim

2012-05-10

In this paper, we have introduced optically controlled two-mode interference (OTMI) coupler having silicon core and GaAsInP cladding as an all-optical switch. By taking advantage of refractive index modulation by launching optical pulse into cladding region of TMI waveguide, we have shown optically controlled switching operation. We have studied optical pulse-controlled coupling characteristics of the proposed device by using a simple mathematical model on the basis of sinusoidal modes. The device length is less than that of previous work. It is also seen that the cross talk of the OTMI switch is not significantly increased with fabrication tolerances (±δw) in comparison with previous work.

Improved Ablation Resistance of Silicone Rubber Composites by Introducing Montmorillonite and Silicon Carbide Whisker

PubMed Central

Zhang, Guangwu; Wang, Fuzhong; Huang, Zhixiong; Dai, Jing; Shi, Minxian

2016-01-01

Montmorillonite (MMT) was added to silicone rubber (SR) to improve the ablation resistance of the silicone. Following this, different quantities of silicon carbide whiskers (SiCw) were incorporated into the MMT/SR to yield a hybrid, ablative composite. The tensile strength and elongation at break of the composite increased after the addition of MMT. The ablation test results showed that MMT helped to form a covering layer by bonding with the silica and other components on the ablated surface. The linear and mass ablation rates exhibited decreases of 22.5% and 18.2%, respectively, in comparison to a control sample. After further incorporation of SiCw as the second filler, the resulting composites exhibited significantly higher tensile strength and ablation resistance, but not particularly lower elongation at break in comparison to the control sample. The SiCw/MMT fillers were beneficial in forming a dense and compact covering layer that delayed the heat and oxygen diffusion into the inner layers, which improved the ablation properties effectively. The remaining whiskers acted as a micro skeleton to maintain the composite’s char strength. Compared to the control sample, the linear and mass ablation rates of the composite after incorporating 6 phr SiCw and 10 phr MMT decreased by 59.2% and 43.6%, respectively. These experimental results showed that the fabricated composites exhibited outstanding mechanical properties and excellent ablation resistance. PMID:28773846

Improved Ablation Resistance of Silicone Rubber Composites by Introducing Montmorillonite and Silicon Carbide Whisker.

PubMed

Zhang, Guangwu; Wang, Fuzhong; Huang, Zhixiong; Dai, Jing; Shi, Minxian

2016-08-24

Montmorillonite (MMT) was added to silicone rubber (SR) to improve the ablation resistance of the silicone. Following this, different quantities of silicon carbide whiskers (SiCw) were incorporated into the MMT/SR to yield a hybrid, ablative composite. The tensile strength and elongation at break of the composite increased after the addition of MMT. The ablation test results showed that MMT helped to form a covering layer by bonding with the silica and other components on the ablated surface. The linear and mass ablation rates exhibited decreases of 22.5% and 18.2%, respectively, in comparison to a control sample. After further incorporation of SiCw as the second filler, the resulting composites exhibited significantly higher tensile strength and ablation resistance, but not particularly lower elongation at break in comparison to the control sample. The SiCw/MMT fillers were beneficial in forming a dense and compact covering layer that delayed the heat and oxygen diffusion into the inner layers, which improved the ablation properties effectively. The remaining whiskers acted as a micro skeleton to maintain the composite's char strength. Compared to the control sample, the linear and mass ablation rates of the composite after incorporating 6 phr SiCw and 10 phr MMT decreased by 59.2% and 43.6%, respectively. These experimental results showed that the fabricated composites exhibited outstanding mechanical properties and excellent ablation resistance.

Humidity sensing properties of morphology-controlled ordered silicon nanopillar

NASA Astrophysics Data System (ADS)

Li, Wei; Hu, Mingyue; Ge, Pengpeng; Wang, Jing; Guo, YanYan

2014-10-01

Ordered silicon nanopillar array (Si-NPA) was fabricated by nanosphere lithography. The size of silicon nanopillars can be easily controlled by an etching process. The period and density of nanopillar arrays are determined by the initial diameter of polystyrene (PS) spheres. It was studied as a sensing material to detect humidity. Room temperature current sensitivity of Si-NPA sensor was investigated at a relative humidity (RH) ranging from 50 to 70%. As a result, the measured current showed there was a significant increase at 70% RH. The response and recovery time was about 10 s and 15 s. These excellent sensing characteristics indicate that Si-NPA might be a practical sensing material.

Silane-Pyrolysis Reactor With Nonuniform Heating

NASA Technical Reports Server (NTRS)

Iya, Sridhar K.

1991-01-01

Improved reactor serves as last stage in system processing metallurgical-grade silicon feedstock into silicon powder of ultrahigh purity. Silane pyrolized to silicon powder and hydrogen gas via homogeneous decomposition reaction in free space. Features set of individually adjustable electrical heaters and purge flow of hydrogen to improve control of pyrolysis conditions. Power supplied to each heater set in conjunction with flow in reactor to obtain desired distribution of temperature as function of position along reactor.

Stress and Strain in Silicon Electrode Models

DOE PAGES

Higa, Kenneth; Srinivasan, Venkat

2015-03-24

While the high capacity of silicon makes it an attractive negative electrode for Li-ion batteries, the associated large volume change results in fracture and capacity fade. Composite electrodes incorporating silicon have additional complexity, as active material is attached to surrounding material which must likewise experience significant volume change. In this paper, a finite-deformation model is used to explore, for the first time, mechanical interactions between a silicon particle undergoing lithium insertion, and attached binder material. Simulations employ an axisymmetric model system in which solutions vary in two spatial directions and shear stresses develop at interfaces between materials. The mechanical responsemore » of the amorphous active material is dependent on lithium concentration, and an equation of state incorporating reported volume expansion data is used. Simulations explore the influence of active material size and binder stiffness, and suggest delamination as an additional mode of material damage. Computed strain energies and von Mises equivalent stresses are in physically-relevant ranges, comparable to reported yield stresses and adhesion energies, and predicted trends are largely consistent with reported experimental results. It is hoped that insights from this work will support the design of more robust silicon composite electrodes.« less

Parameter Estimation of a Spiking Silicon Neuron

PubMed Central

Russell, Alexander; Mazurek, Kevin; Mihalaş, Stefan; Niebur, Ernst; Etienne-Cummings, Ralph

2012-01-01

Spiking neuron models are used in a multitude of tasks ranging from understanding neural behavior at its most basic level to neuroprosthetics. Parameter estimation of a single neuron model, such that the model’s output matches that of a biological neuron is an extremely important task. Hand tuning of parameters to obtain such behaviors is a difficult and time consuming process. This is further complicated when the neuron is instantiated in silicon (an attractive medium in which to implement these models) as fabrication imperfections make the task of parameter configuration more complex. In this paper we show two methods to automate the configuration of a silicon (hardware) neuron’s parameters. First, we show how a Maximum Likelihood method can be applied to a leaky integrate and fire silicon neuron with spike induced currents to fit the neuron’s output to desired spike times. We then show how a distance based method which approximates the negative log likelihood of the lognormal distribution can also be used to tune the neuron’s parameters. We conclude that the distance based method is better suited for parameter configuration of silicon neurons due to its superior optimization speed. PMID:23852978

Dephosphorization of Levitated Silicon-Iron Droplets for Production of Solar-Grade Silicon

NASA Astrophysics Data System (ADS)

Le, Katherine; Yang, Yindong; Barati, Mansoor; McLean, Alexander

2018-05-01

The treatment of relatively inexpensive silicon-iron alloys is a potential refining route in order to generate solar-grade silicon. Phosphorus is one of the more difficult impurity elements to remove by conventional processing. In this study, electromagnetic levitation was used to investigate phosphorus behavior in silicon-iron alloy droplets exposed to H2-Ar gas mixtures under various experimental conditions including, refining time, temperature (1723 K to 1993 K), gas flow rate, iron content, and initial phosphorus concentration in the alloy. Thermodynamic modeling of the dephosphorization reaction permitted prediction of the various gaseous products and indicated that diatomic phosphorus is the dominant species formed.

Electron spin resonance and spin-valley physics in a silicon double quantum dot.

PubMed

Hao, Xiaojie; Ruskov, Rusko; Xiao, Ming; Tahan, Charles; Jiang, HongWen

2014-05-14

Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based double quantum dot under electron spin resonance. An anticrossing of the driven dot energy levels is observed when the Zeeman and valley splittings coincide. A detected anticrossing splitting of 60 MHz is interpreted as a direct measure of spin and valley mixing, facilitated by spin-orbit interaction in the presence of non-ideal interfaces. A lower bound of spin dephasing time of 63 ns is extracted. We also describe a possible experimental evidence of an unconventional spin-valley blockade, despite the assumption of non-ideal interfaces. This understanding of silicon spin-valley physics should enable better control and read-out techniques for the spin qubits in an all CMOS silicon approach.

Evaluation of Silicone as an Artificial Lubricant in Osteoarthrotic Joints

PubMed Central

Wright, V.; Haslock, D. I.; Dowson, D.; Seller, P. C.; Reeves, B.

1971-01-01

Silicone 300 has been evaluated as an artificial lubricant in osteoarthrotic joints by means of a pilot study in five inpatients and a control trial of 25 outpatients with 40 osteoarthrotic knees. Sequential analysis showed a significant benefit from saline compared with silicone at one week follow-up and no significant difference at one month. Measurement of stiffness with a knee arthrograph showed no difference in reduction of stiffness between the two substances. In a study of 18 rabbits there was no evidence that silicone was retained in the joint cavity for longer than 48 hours. There was a failure of clearance of iodinated serum albumin for as long as three to four days after the injection of silicone, suggesting some obstruction to lymphatic outflow. Experimentally produced cartilaginous defects did not heal quicker with the injection of silicone into the joint. PMID:5575973

Effect of oxygen plasma on nanomechanical silicon nitride resonators

NASA Astrophysics Data System (ADS)

Luhmann, Niklas; Jachimowicz, Artur; Schalko, Johannes; Sadeghi, Pedram; Sauer, Markus; Foelske-Schmitz, Annette; Schmid, Silvan

2017-08-01

Precise control of tensile stress and intrinsic damping is crucial for the optimal design of nanomechanical systems for sensor applications and quantum optomechanics in particular. In this letter, we study the influence of oxygen plasma on the tensile stress and intrinsic damping of nanomechanical silicon nitride resonators. Oxygen plasma treatments are common steps in micro and nanofabrication. We show that oxygen plasma for only a few minutes oxidizes the silicon nitride surface, creating several nanometer thick silicon dioxide layers with a compressive stress of 1.30(16) GPa. Such oxide layers can cause a reduction in the effective tensile stress of a 50 nm thick stoichiometric silicon nitride membrane by almost 50%. Additionally, intrinsic damping linearly increases with the silicon dioxide film thickness. An oxide layer of 1.5 nm grown in just 10 s in a 50 W oxygen plasma almost doubled the intrinsic damping. The oxide surface layer can be efficiently removed in buffered hydrofluoric acid.

Incorporation of capsaicin in silicone coatings for enhanced antifouling performance

NASA Astrophysics Data System (ADS)

Reddy Jaggari, Karunakar; Zhang Newby, Bi-Min

2002-03-01

Successful use of capsaicin as insect and animal repellant propelled us to use it as a possible antifouling agent. Its non-toxic, non-biocidal, non-leaching properties make it a viable alternative to organotin compounds. In order to optimize the anti-fouling performance of the coating, silicone, the most effective foul-release marine coating, was chosen as the carrier. We have incorporated capsaicin into silicone coating, by both bulk entrapment and surface immobilization. Contact angle measurements on capsaicin-incorporated silicone exhibited an increase in wettability, owing to the presence of capsaicin. FTIR study further confirmed the incorporation of capsaicin in silicone. Bacterial attachment studies were conducted using lake Erie water. While bacteria liberally inhabited the control coating, their presence on the capsaicin-incorporated coating was found to be minimal. These preliminary studies indicate that capsaicin incorporated silicone could be a viable environment friendly alternative to currently used antifouling coatings.

Process for forming a porous silicon member in a crystalline silicon member

DOEpatents

Northrup, M. Allen; Yu, Conrad M.; Raley, Norman F.

1999-01-01

Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gasses in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters.

Heterogeneous silicon mesostructures for lipid-supported bioelectric interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Yuanwen; Carvalho-de-Souza, João L.; Wong, Raymond C. S.

Silicon-based materials have widespread application as biophysical tools and biomedical devices. Here we introduce a biocompatible and degradable mesostructured form of silicon with multi-scale structural and chemical heterogeneities. The material was synthesized using mesoporous silica as a template through a chemical vapour deposition process. It has an amorphous atomic structure, an ordered nanowire-based framework and random submicrometre voids, and shows an average Young’s modulus that is 2–3 orders of magnitude smaller than that of single-crystalline silicon. In addition, we used the heterogeneous silicon mesostructures to design a lipid-bilayer-supported bioelectric interface that is remotely controlled and temporally transient, and that permitsmore » non-genetic and subcellular optical modulation of the electrophysiology dynamics in single dorsal root ganglia neurons. Our findings suggest that the biomimetic expansion of silicon into heterogeneous and deformable forms can open up opportunities in extracellular biomaterial or bioelectric systems.« less

RF Sputtering for preparing substantially pure amorphous silicon monohydride

DOEpatents

Jeffrey, Frank R.; Shanks, Howard R.

1982-10-12

A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

Heterogeneous silicon mesostructures for lipid-supported bioelectric interfaces

PubMed Central

Jiang, Yuanwen; Carvalho-de-Souza, João L.; Wong, Raymond C. S.; Luo, Zhiqiang; Isheim, Dieter; Zuo, Xiaobing; Nicholls, Alan W.; Jung, Il Woong; Yue, Jiping; Liu, Di-Jia; Wang, Yucai; De Andrade, Vincent; Xiao, Xianghui; Navrazhnykh, Luizetta; Weiss, Dara E.; Wu, Xiaoyang; Seidman, David N.; Bezanilla, Francisco; Tian, Bozhi

2017-01-01

Silicon-based materials have widespread application as biophysical tools and biomedical devices. Here we introduce a biocompatible and degradable mesostructured form of silicon with multiscale structural and chemical heterogeneities. The material was synthesized using mesoporous silica as a template through a chemical-vapor-deposition process. It has an amorphous atomic structure, an ordered nanowire-based framework, and random submicrometre voids, and shows an average Young’s modulus that is 2–3 orders of magnitude smaller than that of single crystalline silicon. In addition, we used the heterogeneous silicon mesostructures to design a lipid-bilayer-supported bioelectric interface that is remotely controlled and temporally transient, and that permits non-genetic and subcellular optical modulation of the electrophysiology dynamics in single dorsal root ganglia neurons. Our findings suggest that the biomimetic expansion of silicon into heterogeneous and deformable forms can open up opportunities in extracellular biomaterial or bioelectric systems. PMID:27348576

Quantum Theory and the Silicon Revolution. Resources in Technology.

ERIC Educational Resources Information Center

Deal, Walter F., III

1995-01-01

This learning activity describes silicon as one of the most plentiful materials on earth, demonstrating how it supplies the building blocks for electronic devices such as transistors, integrated circuits, and microprocessors. It includes a design brief on control technology. (JOW)

Lithographic fabrication of nanoapertures

DOEpatents

Fleming, James G.

2003-01-01

A new class of silicon-based lithographically defined nanoapertures and processes for their fabrication using conventional silicon microprocessing technology have been invented. The new ability to create and control such structures should significantly extend our ability to design and implement chemically selective devices and processes.

Arrays of quasi-hexagonally ordered silica nanopillars with independently controlled areal density, diameter and height gradients

NASA Astrophysics Data System (ADS)

Özdemir, Burcin; Huang, Wenting; Plettl, Alfred; Ziemann, Paul

2015-03-01

A consecutive fabrication approach of independently tailored gradients of the topographical parameters distance, diameter and height in arrays of well-ordered nanopillars on smooth SiO2-Si-wafers is presented. For this purpose, previously reported preparation techniques are further developed and combined. First, self-assembly of Au-salt loaded micelles by dip-coating with computer-controlled pulling-out velocities and subsequent hydrogen plasma treatment produce quasi-hexagonally ordered, 2-dimensional arrays of Au nanoparticles (NPs) with unidirectional variations of the interparticle distances along the pulling direction between 50-120 nm. Second, the distance (or areal density) gradient profile received in this way is superimposed with a diameter-controlled gradient profile of the NPs applying a selective photochemical growth technique. For demonstration, a 1D shutter is used for locally defined UV exposure times to prepare Au NP size gradients varying between 12 and 30 nm. Third, these double-gradient NP arrangements serve as etching masks in a following reactive ion etching step delivering arrays of nanopillars. For height gradient generation, the etching time is locally controlled by applying a shutter made from Si wafer piece. Due to the high flexibility of the etching process, the preparation route works on various materials such as cover slips, silicon, silicon oxide, silicon nitride and silicon carbide.

Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon.

PubMed

Lill, Patrick C; Dahlinger, Morris; Köhler, Jürgen R

2017-02-16

Boron pile-up at the maximum melt depth for laser melt annealing of implanted silicon has been reported in numerous papers. The present contribution examines the boron accumulation in a laser doping setting, without dopants initially incorporated in the silicon wafer. Our numerical simulation models laser-induced melting as well as dopant diffusion, and excellently reproduces the secondary ion mass spectroscopy-measured boron profiles. We determine a partitioning coefficient k p above unity with k p = 1 . 25 ± 0 . 05 and thermally-activated diffusivity D B , with a value D B ( 1687 K ) = ( 3 . 53 ± 0 . 44 ) × 10 - 4 cm 2 ·s - 1 of boron in liquid silicon. For similar laser parameters and process conditions, our model predicts the anticipated boron profile of a laser doping experiment.

Rheology behaviour of modified silicone-dammar as a natural resin coating

NASA Astrophysics Data System (ADS)

Zakaria, Rosnah; Ahmad, Azizah Hanom

2015-08-01

Modified silicone-dammar (SD) was prepared by various weight percent from 5 - 45 wt% of dammar added. The n-value (viscosity index) of silicone with 5 and 10 % were turn to be 1.6 and 1.3 of viscosity index. While 15, 20, 25 and 30 wt% of dammar added gave 0.7, 0.3, 0.2 and 0.1 of viscosity index. On the other hand, 35, 40 and 45 wt% of dammar gave a fixed value of viscosity index of 0.03. This n-value shows the dispersion quality of paint mixture indicates that the modified silicone-dammar was followed the Bingham's Model. The rheology measurement of SD mixture was analysed by plotting ln shear stress vs shear rate value. Analysis of the graph showed a Bingham plastic model with regression R2 equivalent to 0.99. The linear viscoelastic behaviour of SD samples increased in parallel with increasing dammar content indicate that the suspension of dammar in silicone resin could flow steadily with time giving a pseudoplastic behaviour.

SiC vs. Si for High Radiation Environments: NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

NASA Technical Reports Server (NTRS)

Harris, Richard D.

2008-01-01

Commercial silicon carbide and silicon Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V characteristics have been observed. Changes in forward bias I-V characteristics are reported for fluences up to 4 x 10(exp 14) p/cm2. For devices of both material types, the series resistance is observed to increase as the fluence increases. The changes in series resistance result from changes in the free carrier concentration due to carrier removal by the defects produced. A simple model is presented that allows calculation of the series resistance of the device and then relates the carrier removal rate to the changes in series resistance. Using this model to calculate the carrier removal rate in both materials reveals that the carrier removal rate in silicon is less than that in silicon carbide, indicating that silicon is the more radiation tolerant material.

Comprehensive silicon solar-cell computer modeling

NASA Technical Reports Server (NTRS)

Lamorte, M. F.

1984-01-01

A comprehensive silicon solar cell computer modeling scheme was developed to perform the following tasks: (1) model and analysis of the net charge distribution in quasineutral regions; (2) experimentally determined temperature behavior of Spire Corp. n+pp+ solar cells where n+-emitter is formed by ion implantation of 75As or 31P; and (3) initial validation results of computer simulation program using Spire Corp. n+pp+ cells.

Investigation of semiconductor clad optical waveguides

NASA Technical Reports Server (NTRS)

Batchman, T. E.; Mcwright, G.

1981-01-01

The properties of semiconductor-clad optical waveguides based on glass substrates were investigated. Computer modeling studies on four-layer silicon-clad planar dielectric waveguides indicated that the attenuation and mode index should behave as exponentially damped sinusoids as the silicon thickness is decreased below one micrometer. This effect can be explained as a periodic coupling between the guided modes of the lossless structure and the lossy modes supported by the high refractive index silicon. The computer studies also show that both the attenuation and mode index of the propagating mode are significantly altered by conductivity charges in the silicon. Silicon claddings were RF sputtered onto AgNO3-NaNO3 ion exchanged waveguides and preliminary measurements of attenuation were made. An expression was developed which predicts the attenuation of the silicon clad waveguide from the attenuation and phase characteristics of a silicon waveguide. Several applications of these clad waveguides are suggested and methods for increasing the photo response of the RF sputtered silicon films are described.

Finite element analysis of a structural silicone shear bead used in skylight applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Travis, H.S.; Carbary, L.D.

1998-12-31

Finite element analysis (FEA) was used to predict stresses and strains in a 6 mm x 6 mm structural silicone joint on the edge of an overhead piece of glass. The project was undertaken because of a marketplace report that this particular type of joint was showing field leaks after 5--10 years of service. FEA was used to show the stresses and strains in the nominal joint design under negative wind uplifts. After a three dimensional FEA model of the skylight system was completed, the deformations in the model were used to load a series of two dimensional FEA modelsmore » of the silicone bead. The two dimensional bead models were completed at repeated intervals down the span, providing a finer mesh for recovering stresses and strains. All stresses and strains in this model were shown to be well within the working range of the silicone sealant properties. It was concluded that the field leaks were not due to excessive strains and could possibly be due to installation issues, mechanical damage or improper joints resulting from construction tolerances.« less

High temperature and frequency pressure sensor based on silicon-on-insulator layers

NASA Astrophysics Data System (ADS)

Zhao, Y. L.; Zhao, L. B.; Jiang, Z. D.

2006-03-01

Based on silicon on insulator (SOI) technology, a novel high temperature pressure sensor with high frequency response is designed and fabricated, in which a buried silicon dioxide layer in the silicon material is developed by the separation by implantation of oxygen (SIMOX) technology. This layer can isolate leak currents between the top silicon layer for the detecting circuit and body silicon at a temperature of about 200 °C. In addition, the technology of silicon and glass bonding is used to create a package of the sensor without internal strain. A structural model and test data from the sensor are presented. The experimental results showed that this kind of sensor possesses good static performance in a high temperature environment and high frequency dynamic characteristics, which may satisfy the pressure measurement demands of the oil industry, aviation and space, and so on.

Infrared Dielectric Properties of Low-Stress Silicon Oxide

NASA Technical Reports Server (NTRS)

Cataldo, Giuseppe; Wollack, Edward J.; Brown, Ari D.; Miller, Kevin H.

2016-01-01

Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric function are presented.

Recurrent laryngeal nerve regeneration through a silicone tube produces reinnervation without vocal fold mobility in rats.

PubMed

Kumai, Yoshihiko; Aoyama, Takashi; Nishimoto, Kohei; Sanuki, Tetsuji; Minoda, Ryosei; Yumoto, Eiji

2013-01-01

We established an animal model of recurrent laryngeal nerve reinnervation with persistent vocal fold immobility following recurrent laryngeal nerve injury. In 36 rats, the left recurrent laryngeal nerve was transected and the stumps were abutted in a silicone tube with a 1-mm interspace, facilitating regeneration. The mobility of the vocal folds was examined endoscopically 5, 10, and 15 weeks later. Electromyography of the thyroarytenoid muscle was performed. Reinnervation was assessed by means of a quantitative immunohistologic evaluation with anti-neurofilament antibody in the nerve both proximal and distal to the silicone tube. The atrophy of the thyroarytenoid muscle was assessed histologically. We observed that all animals had a fixed left vocal fold throughout the study. The average neurofilament expression in the nerve both distal and proximal to the silicone tube, the muscle area, and the amplitude of the compound muscle action potential recorded from the thyroarytenoid muscle on the treated side increased significantly (p < 0.05) over time, demonstrating regeneration through the silicone tube. Recurrent laryngeal nerve regeneration through a silicone tube produced reinnervation without vocal fold mobility in rats. The efficacy of new laryngeal reinnervation treatments can be assessed with this model.

Long-term stability of amorphous-silicon modules

NASA Technical Reports Server (NTRS)

Ross, R. G., Jr.

1986-01-01

The Jet Propulsion Laboratory (JPL) program of developing qualification tests necessary for amorphous silicon modules, including appropriate accelerated environmental tests reveal degradation due to illumination. Data were given which showed the results of temperature-controlled field tests and accelerated tests in an environmental chamber.

Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

NASA Astrophysics Data System (ADS)

Yin, Lan; Bozler, Carl; Harburg, Daniel V.; Omenetto, Fiorenzo; Rogers, John A.

2015-01-01

Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

Control of heat transfer in continuous-feeding Czochralski-silicon crystal growth with a water-cooled jacket

NASA Astrophysics Data System (ADS)

Zhao, Wenhan; Liu, Lijun

2017-01-01

The continuous-feeding Czochralski method is an effective method to reduce the cost of single crystal silicon. By promoting the crystal growth rate, the cost can be reduced further. However, more latent heat will be released at the melt-crystal interface under a high crystal growth rate. In this study, a water-cooled jacket was applied to enhance the heat transfer at the melt-crystal interface. Quasi-steady-state numerical calculation was employed to investigate the impact of the water-cooled jacket on the heat transfer at the melt-crystal interface. Latent heat released during the crystal growth process at the melt-crystal interface and absorbed during feedstock melting at the feeding zone was modeled in the simulations. The results show that, by using the water-cooled jacket, heat transfer in the growing crystal is enhanced significantly. Melt-crystal interface deflection and thermal stress increase simultaneously due to the increase of radial temperature at the melt-crystal interface. With a modified heat shield design, heat transfer at the melt-crystal interface is well controlled. The crystal growth rate can be increased by 20%.

A first-principles study of As doping at a disordered Si-SiO2 interface.

PubMed

Corsetti, Fabiano; Mostofi, Arash A

2014-02-05

Understanding the interaction between dopants and semiconductor-oxide interfaces is an increasingly important concern in the drive to further miniaturize modern transistors. To this end, using a combination of first-principles density-functional theory and a continuous random network Monte Carlo method, we investigate electrically active arsenic donors at the interface between silicon and its oxide. Using a realistic model of the disordered interface, we find that a small percentage (on the order of ∼10%) of the atomic sites in the first few monolayers on the silicon side of the interface are energetically favourable for segregation, and that this is controlled by the local bonding and local strain of the defect centre. We also find that there is a long-range quantum confinement effect due to the interface, which results in an energy barrier for dopant segregation, but that this barrier is small in comparison to the effect of the local environment. Finally, we consider the extent to which the energetics of segregation can be controlled by the application of strain to the interface.

Stress induced phase transitions in silicon

NASA Astrophysics Data System (ADS)

Budnitzki, M.; Kuna, M.

2016-10-01

Silicon has a tremendous importance as an electronic, structural and optical material. Modeling the interaction of a silicon surface with a pointed asperity at room temperature is a major step towards the understanding of various phenomena related to brittle as well as ductile regime machining of this semiconductor. If subjected to pressure or contact loading, silicon undergoes a series of stress-driven phase transitions accompanied by large volume changes. In order to understand the material's response for complex non-hydrostatic loading situations, dedicated constitutive models are required. While a significant body of literature exists for the dislocation dominated high-temperature deformation regime, the constitutive laws used for the technologically relevant rapid low-temperature loading have severe limitations, as they do not account for the relevant phase transitions. We developed a novel finite deformation constitutive model set within the framework of thermodynamics with internal variables that captures the stress induced semiconductor-to-metal (cd-Si → β-Si), metal-to-amorphous (β-Si → a-Si) as well as amorphous-to-amorphous (a-Si → hda-Si, hda-Si → a-Si) transitions. The model parameters were identified in part directly from diamond anvil cell data and in part from instrumented indentation by the solution of an inverse problem. The constitutive model was verified by successfully predicting the transformation stress under uniaxial compression and load-displacement curves for different indenters for single loading-unloading cycles as well as repeated indentation. To the authors' knowledge this is the first constitutive model that is able to adequately describe cyclic indentation in silicon.

Photoluminescence of Porous Silicon-Zinc Oxide Hybrid structures

NASA Astrophysics Data System (ADS)

Olenych, I. B.; Monastyrskii, L. S.; Luchechko, A. P.

2017-03-01

Arrays of ZnO nanostructures, which are optically transparent in the visible range, were grown on the surface of porous silicon by electrochemical deposition. Photoluminescence excitation and emission spectra of the obtained hybrid structures were investigated in 220-450 and 400-800 nm regions, respectively. It is established that multicolor emission is formed by combining the luminescence bands of porous silicon and zinc oxide. The possibility of controlling the photoluminescence spectra by changing the excitation energy is demonstrated. It is revealed that thermal annealing has an effect on the luminescent properties of porous silicon/zinc oxide hybrid structures. Thermal processing at 500°C leads to a sharp decrease of long-wavelength luminescence associated with porous silicon and to an increase of short-wavelength luminescence intensity related to zinc oxide.

Waterproof Silicone Coatings of Thermal Insulation and Vaporization Method

NASA Technical Reports Server (NTRS)

Cagliostro, Domenick E. (Inventor)

1999-01-01

Thermal insulation composed of porous ceramic material can be waterproofed by producing a thin silicone film on the surface of the insulation by exposing it to volatile silicone precursors at ambient conditions. When the silicone precursor reactants are multi-functional siloxanes or silanes containing alkenes or alkynes carbon groups higher molecular weight films can be produced. Catalyst are usually required for the silicone precursors to react at room temperature to form the films. The catalyst are particularly useful in the single component system e.g. dimethylethoxysilane (DNMS) to accelerate the reaction and decrease the time to waterproof and protect the insulation. In comparison to other methods, the chemical vapor technique assures better control over the quantity and location of the film being deposited on the ceramic insulation to improve the waterproof coating.

Fabrication of sub-12 nm thick silicon nanowires by processing scanning probe lithography masks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kyoung Ryu, Yu; Garcia, Ricardo, E-mail: r.garcia@csic.es; Aitor Postigo, Pablo

2014-06-02

Silicon nanowires are key elements to fabricate very sensitive mechanical and electronic devices. We provide a method to fabricate sub-12 nm silicon nanowires in thickness by combining oxidation scanning probe lithography and anisotropic dry etching. Extremely thin oxide masks (0.3–1.1 nm) are transferred into nanowires of 2–12 nm in thickness. The width ratio between the mask and the silicon nanowire is close to one which implies that the nanowire width is controlled by the feature size of the nanolithography. This method enables the fabrication of very small single silicon nanowires with cross-sections below 100 nm{sup 2}. Those values are the smallest obtained withmore » a top-down lithography method.« less

Biphasic β-TCP mixed with silicon increases bone formation in critical site defects in rabbit calvaria.

PubMed

Calvo-Guirado, José Luis; Garces, Miguel; Delgado-Ruiz, Rafael Arcesio; Ramirez Fernandez, Maria P; Ferres-Amat, Eduard; Romanos, Georgios E

2015-08-01

The aim of this study was to assess the bone regeneration of critical size defects in rabbit calvarias filled with β-TCP doped with silicon. Twenty-one New Zealand rabbits were used in this study. Two critical size defects were created in the parietal bones. Three experimental groups were evaluated: Test A (HA/β-TCP granules alone), Test B (HA/β-TCP granules plus 3% silicon), Control (empty defect). The animals were sacrificed at 8 and 12 weeks. Evaluation was performed by μCT analysis and histomorphometry. μCT evaluation showed higher volume reduction in Test A group compared with Test B (P < 0.05). The Test B group showed the highest values for cortical closure and bone formation around the particles, followed by Test A and controls (P < 0.05). Within the limitations of this animal study, it can be concluded that HA/β-TCP plus 3% silicon increases bone formation in critical size defects in rabbit calvarias, and the incorporation of 3% silicon reduces the resorption rate of the HA/β-TCP granules. © 2014 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures

NASA Astrophysics Data System (ADS)

Colston, Gerard; Myronov, Maksym

2017-11-01

Cubic silicon carbide (3C-SiC) offers an alternative wide bandgap semiconductor to conventional materials such as hexagonal silicon carbide (4H-SiC) or gallium nitride (GaN) for the detection of UV light and can offer a closely lattice matched virtual substrate for subsequent GaN heteroepitaxy. As 3C-SiC can be heteroepitaxially grown on silicon (Si) substrates its optical properties can be manipulated by controlling the thickness and doping concentrations. The optical properties of 3C-SiC epilayers have been characterized by measuring the transmission of light through suspended membranes. Decreasing the thickness of the 3C-SiC epilayers is shown to shift the absorbance edge to lower wavelengths, a result of the indirect bandgap nature of silicon carbide. This property, among others, can be exploited to fabricate very low-cost, tuneable 3C-SiC based UV photodetectors. This study investigates the effect of thickness and doping concentration on the optical properties of 3C-SiC epilayers grown at low temperatures by a standard Si based growth process. The results demonstrate the potential photonic applications of 3C-SiC and its heterogeneous integration into the Si industry.

Study on effective thermal conductivity of silicone/phosphor composite and its size effect by Lattice Boltzmann method

NASA Astrophysics Data System (ADS)

Li, Lan; Zheng, Huai; Yuan, Chao; Hu, Run; Luo, Xiaobing

2016-12-01

The silicone/phosphor composite is widely used in light emitting diode (LED) packaging. The composite thermal properties, especially the effective thermal conductivity, strongly influence the LED performance. In this paper, a lattice Boltzmann model was presented to predict the silicone/phosphor composite effective thermal conductivity. Based on the present lattice Boltzmann model, a random generation method was established to describe the phosphor particle distribution in composite. Benchmarks were conducted by comparing the simulation results with theoretical solutions for simple cases. Then the model was applied to analyze the effective thermal conductivity of the silicone/phosphor composite and its size effect. The deviations between simulation and experimental results are <7 %, when the phosphor volume fraction varies from 0.038 to 0.45. The simulation results also indicate that effective thermal conductivity of the composite with larger particles is higher than that with small particles at the same volume fraction. While mixing these two sizes of phosphor particles provides an extra enhancement for the effective thermal conductivity.

The influence of buoyant forces and volume fraction of particles on the particle pushing/entrapment transition during directional solidification of Al/SiC and Al/graphite composites

NASA Technical Reports Server (NTRS)

Stefanescu, Doru M.; Moitra, Avijit; Kacar, A. Sedat; Dhindaw, Brij K.

1990-01-01

Directional solidification experiments in a Bridgman-type furnace were used to study particle behavior at the liquid/solid interface in aluminum metal matrix composites. Graphite or silicon-carbide particles were first dispersed in aluminum-base alloys via a mechanically stirred vortex. Then, 100-mm-diameter and 120-mm-long samples were cast in steel dies and used for directional solidification. The processing variables controlled were the direction and velocity of solidification and the temperature gradient at the interface. The material variables monitored were the interface energy, the liquid/particle density difference, the particle/liquid thermal conductivity ratio, and the volume fraction of particles. These properties were changed by selecting combinations of particles (graphite or silicon carbide) and alloys (Al-Cu, Al-Mg, Al-Ni). A model which consideres process thermodynamics, process kinetics (including the role of buoyant forces), and thermophysical properties was developed. Based on solidification direction and velocity, and on materials properties, four types of behavior were predicted. Sessile drop experiments were also used to determine some of the interface energies required in calculation with the proposed model. Experimental results compared favorably with model predictions.

Magneto-optical Kerr rotation and color in ultrathin lossy dielectric

NASA Astrophysics Data System (ADS)

Zhang, Jing; Wang, Hai; Qu, Xin; Zhou, Yun song; Li, Li na

2017-05-01

Ultra-thin optical coating comprising nanometer-thick silicon absorbing films on iron substrates can display strong optical interference effects. A resonance peak of ∼1.6^\\circ longitudinal Kerr rotation with the silicon thickness of ∼47 \\text{nm} was found at the wavelength of 660 nm. The optical properties of silicon thin films were well controlled by the sputtering power. Non-iridescence color exhibition and Kerr rotation enhancement can be manipulated and encoded individually.

Metal-assisted chemical etch porous silicon formation method

DOEpatents

Li, Xiuling; Bohn, Paul W.; Sweedler, Jonathan V.

2004-09-14

A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET.

PubMed

Voisin, B; Maurand, R; Barraud, S; Vinet, M; Jehl, X; Sanquer, M; Renard, J; De Franceschi, S

2016-01-13

Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole quantum dot. A detailed magnetotransport study of the first accessible hole reveals a g-factor with unexpectedly strong anisotropy and gate dependence. We infer that these two characteristics could enable an electrically driven g-tensor-modulation spin resonance with Rabi frequencies exceeding several hundred mega-Hertz.

Large area sheet task. Advanced dendritic web growth development. [silicon films

NASA Technical Reports Server (NTRS)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Hopkins, R. H.; Meier, D.; Frantti, E.; Schruben, J.

1981-01-01

The development of a silicon dendritic web growth machine is discussed. Several refinements to the sensing and control equipment for melt replenishment during web growth are described and several areas for cost reduction in the components of the prototype automated web growth furnace are identified. A circuit designed to eliminate the sensitivity of the detector signal to the intensity of the reflected laser beam used to measure melt level is also described. A variable speed motor for the silicon feeder is discussed which allows pellet feeding to be accomplished at a rate programmed to match exactly the silicon removed by web growth.

Biomechanical properties of nano-TiO(2) addition to a medical silicone elastomer: the effect of artificial ageing.

PubMed

Wang, Linlin; Liu, Qi; Jing, Dongdong; Zhou, Shanyu; Shao, Longquan

2014-04-01

The aim of this study was to evaluate the effect of TiO2 nanoparticles on the mechanical and anti-ageing properties of a medical silicone elastomer and to assess the biocompatibility of this novel combination. TiO2 (P25, Degussa, Germany) nanoparticles were mixed with the silicone elastomer (MDX4-4210, Dow Corning, USA) at 2%, 4%, and 6% (w/w) using silicone fluid as diluent (Q7-9180, Dow Corning, USA). Blank silicone elastomer served as the control material. The physical properties and biocompatibility of the composites were examined. The tensile strength was tested for 0% and 6% (w/w) before and after artificial ageing. SEM analysis was performed. TiO2 nanoparticles improved the tensile strength and Shore A hardness of the silicone elastomer (P<0.05). However, a decrease in the elongation at break and tear strength was found for the 6% (w/w) composite (P<0.05). All the ageing methods had no effect on the tensile strength of the 6% (w/w) composite (P>0.05), but thermal ageing significantly decreased the tensile strength of the control group (P<0.05). Cellular viability assays indicated that the composite exhibited biocompatibility. We obtained a promising restorative material which yields favourable physical and anti-ageing properties and is biocompatible in our in vitro cellular studies. Copyright © 2014 Elsevier Ltd. All rights reserved.

Treatment to Control Adhesion of Silicone-Based Elastomers

NASA Technical Reports Server (NTRS)

deGroh, Henry C., III; Puleo, Bernadette J.; Waters, Deborah L.

2013-01-01

Seals are used to facilitate the joining of two items, usually temporarily. At some point in the future, it is expected that the items will need to be separated. This innovation enables control of the adhesive properties of silicone-based elastomers. The innovation may also be effective on elastomers other than the silicone-based ones. A technique has been discovered that decreases the level of adhesion of silicone- based elastomers to negligible levels. The new technique causes less damage to the material compared to alternative adhesion mitigation techniques. Silicone-based elastomers are the only class of rubber-like materials that currently meet NASA s needs for various seal applications. However, silicone-based elastomers have natural inherent adhesive properties. This stickiness can be helpful, but it can frequently cause problems as well, such as when trying to get items apart. In the past, seal adhesion was not always adequately addressed, and has caused in-flight failures where seals were actually pulled from their grooves, preventing subsequent spacecraft docking until the seal was physically removed from the flange via an extravehicular activity (EVA). The primary method used in the past to lower elastomer seal adhesion has been the application of some type of lubricant or grease to the surface of the seal. A newer method uses ultraviolet (UV) radiation a mixture of UV wavelengths in the range of near ultraviolet (NUV) and vacuum ultraviolet (VUV) wavelengths.

Rolf Landauer and Charles H. Bennett Award Talk: Experimental development of spin qubits in silicon

NASA Astrophysics Data System (ADS)

Morello, Andrea

The modern information era is built on silicon nanoelectronic devices. The future quantum information era might be built on silicon too, if we succeed in controlling the interactions between individual spins hosted in silicon nanostructures. Spins in silicon constitute excellent solid-state qubits, because of the weak spin-orbit coupling and the possibility to remove nuclear spins from the environment through 28Si isotopic enrichment. Substitutional 31P atoms in silicon behave approximately like hydrogen in vacuum, providing two spin 1/2 qubits - the donor-bound electron and the 31P nucleus - that can be coherently controlled, read out in single-shot, and are naturally coupled through the hyperfine interaction. In isotopically-enriched 28Si, these single-atom qubits have demonstrated outstanding coherence times, up to 35 seconds for the nuclear spin, and 1-qubit gate fidelities well above 99.9% for both the electron and the nucleus. The hyperfine coupling provides a built-in interaction to entangle the two qubits within one atom. The combined initialization, control and readout fidelities result in a violation of Bell's inequality with S = 2 . 70 , a record value for solid-state qubits. Despite being identical atomic systems, 31P atoms can be addressed individually by locally modifying the hyperfine interaction through electrostatic gating. Multi-qubit logic gates can be mediated either by the exchange interaction or by electric dipole coupling. Scaling up beyond a single atom presents formidable challenges, but provides a pathway to building quantum processors that are compatible with standard semiconductor fabrication, and retain a nanometric footprint, important for truly large-scale quantum computers. Work supported by US Army Research Office (W911NF-13-1-0024) and Australian Research Council (CE110001027).

Pressure Studies of Protein Dynamics

DTIC Science & Technology

1990-02-28

a frozen and metastable complex system In the present section was generated by a flashlamp-pumped dye laser (Phase-R DL- treat the equilibrium region...determination of the relative thermodynamic parameters of the and the temperature was monitored with a Si diode on the pressure We assume that the A substates...temperature controller (Model proteins is essentially linear from 200 to 320 K. 2" The entropy 93C). A silicon diode mounted on the sample cell

Release of betaine and dexpanthenol from vitamin E modified silicone-hydrogel contact lenses.

PubMed

Hsu, Kuan-Hui; de la Jara, Percy Lazon; Ariyavidana, Amali; Watling, Jason; Holden, Brien; Garrett, Qian; Chauhan, Anuj

2015-03-01

To develop a contact lens system that will control the release of an osmoprotectant and a moisturizing agent with the aim to reduce symptoms of ocular dryness. Profiles of the release of osmoprotectant betaine and moisturizing agent dexpanthenol from senofilcon A and narafilcon B contact lenses were determined in vitro under sink conditions. Both types of lenses were also infused with vitamin E to increase the duration of drug release due to the formation of the vitamin E diffusion barriers in the lenses. The release profiles from vitamin E-infused lenses were compared with those from the control lenses. Both dexpanthenol and betaine are released from commercial silicone hydrogel lenses for only about 10 min. Vitamin E loadings into contact lenses at about 20-23% can increase the release times to about 10 h, which is about 60 times larger compared to the control unmodified lenses. Vitamin E-loaded silicone hydrogel contact lenses released betaine and dexpanthenol in a controlled fashion.

Controlling the spectrum of photons generated on a silicon nanophotonic chip

PubMed Central

Kumar, Ranjeet; Ong, Jun Rong; Savanier, Marc; Mookherjea, Shayan

2014-01-01

Directly modulated semiconductor lasers are widely used, compact light sources in optical communications. Semiconductors can also be used to generate nonclassical light; in fact, CMOS-compatible silicon chips can be used to generate pairs of single photons at room temperature. Unlike the classical laser, the photon-pair source requires control over a two-dimensional joint spectral intensity (JSI) and it is not possible to process the photons separately, as this could destroy the entanglement. Here we design a photon-pair source, consisting of planar lightwave components fabricated using CMOS-compatible lithography in silicon, which has the capability to vary the JSI. By controlling either the optical pump wavelength, or the temperature of the chip, we demonstrate the ability to select different JSIs, with a large variation in the Schmidt number. Such control can benefit high-dimensional communications where detector-timing constraints can be relaxed by realizing a large Schmidt number in a small frequency range. PMID:25410792

Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings

DOE PAGES

Pica, G.; Lovett, B. W.; Bhatt, R. N.; ...

2016-01-14

A scaled quantum computer with donor spins in silicon would benefit from a viable semiconductor framework and a strong inherent decoupling of the qubits from the noisy environment. Coupling neighboring spins via the natural exchange interaction according to current designs requires gate control structures with extremely small length scales. In this work, we present a silicon architecture where bismuth donors with long coherence times are coupled to electrons that can shuttle between adjacent quantum dots, thus relaxing the pitch requirements and allowing space between donors for classical control devices. An adiabatic SWAP operation within each donor/dot pair solves the scalabilitymore » issues intrinsic to exchange-based two-qubit gates, as it does not rely on subnanometer precision in donor placement and is robust against noise in the control fields. In conclusion, we use this SWAP together with well established global microwave Rabi pulses and parallel electron shuttling to construct a surface code that needs minimal, feasible local control.« less

Chemical vapor deposition and characterization of polysilanes polymer based thin films and their applications in compound semiconductors and silicon devices

NASA Astrophysics Data System (ADS)

Oulachgar, El Hassane

As the semiconductors industry is moving toward nanodevices, there is growing need to develop new materials and thin films deposition processes which could enable strict control of the atomic composition and structure of thin film materials in order to achieve precise control on their electrical and optical properties. The accurate control of thin film characteristics will become increasingly important as the miniaturization of semiconductor devices continue. There is no doubt that chemical synthesis of new materials and their self assembly will play a major role in the design and fabrication of next generation semiconductor devices. The objective of this work is to investigate the chemical vapor deposition (CVD) process of thin film using a polymeric precursor as a source material. This process offers many advantages including low deposition cost, hazard free working environment, and most importantly the ability to customize the polymer source material through polymer synthesis and polymer functionalization. The combination between polymer synthesis and CVD process will enable the design of new generation of complex thin film materials with a wide range of improved chemical, mechanical, electrical and optical properties which cannot be easily achieved through conventional CVD processes based on gases and small molecule precursors. In this thesis we mainly focused on polysilanes polymers and more specifically poly(dimethylsilanes). The interest in these polymers is motivated by their distinctive electronic and photonic properties which are attributed to the delocalization of the sigma-electron along the Si-Si backbone chain. These characteristics make polysilane polymers very promising in a broad range of applications as a dielectric, a semiconductor and a conductor. The polymer-based CVD process could be eventually extended to other polymer source materials such as polygermanes, as well as and a variety of other inorganic and hybrid organic-inorganic polymers. This work has demonstrated that a polysilane polymeric source can be used to deposit a wide range of thin film materials exhibiting similar properties with conventional ceramic materials such as silicon carbide (SiC), silicon oxynitride (SiON), silicon oxycarbide (SiOC) silicon dioxide (SiO2) and silicon nitride (Si3N4). The strict control of the deposition process allows precise control of the electrical, optical and chemical properties of polymer-based thin films within a broad range. This work has also demonstrated for the first time that poly(dimethylsilmaes) polymers deposited by CVD can be used to effectively passivate both silicon and gallium arsenide MOS devices. This finding makes polymer-based thin films obtained by CVD very promising for the development of high-kappa dielectric materials for next generation high-mobility CMOS technology. Keywords. Thin films, Polymers, Vapor Phase Deposition, CVD, Nanodielectrics, Organosilanes, Polysilanes, GaAs Passivation, MOSFET, Silicon Oxynitride, Integrated Waveguide, Silicon Carbide, Compound Semiconductors.

Capacitively Coupled RF Plasmas for the Synthesis of Silicon Nanocrystals: Scaling and Mechanisms

NASA Astrophysics Data System (ADS)

Markosyan, Aram H.; Le Picard, Romain; Porter, David H.; Girshick, Steven L.; Kushner, Mark J.

2015-09-01

Silicon nanocrystals (SNCs) are of interest for light emitting electronics, photovoltaics, and biotechnology. SNCs are produced in low pressure capacitively coupled plasmas (CCPs) sustained in SiH4 containing mixtures. To optimize these applications, it is necessary to control the size distribution of the SNCs. Particles 3-5 nm diameter are typically tailored by flow rates and power, however the fundamental processes responsible for this size control are not well understood. We developed a 2-d computer model for RF powered CCPs to predict the synthesis of SNCs. An aerosol sectional model was incorporated into the Hybrid Plasma Equipment Model. The reactor is a quartz tube a few mm in diameter through which 100 sccm Ar and 15 sccm He/SiH4 = 95/5 at 2 Torr are flowed. The SNC residence time is 1-2 ms in the dense plasma region near the electrodes. We found that the distribution of plasma potential is important in determining the growth and size distribution of the SNCs. The SNCs having long residence times in the plasma, thereby enabling growth, are usually negatively charged. To ultimately allow these SNCs to flow out of the plasma, the distribution of the plasma potential must enable the particles to be entrained in the neutral gas flow without a significant potential barrier. We also found that agglomeration of particles of <1 nm is important in the rate of growth of SNCs. Work supported by DOE (DE-SC0001939) and NSF (CHE-124752).

Analytic implementation of the GRAAL model: Application to a R7T7-type glass package in a geological disposal environment

NASA Astrophysics Data System (ADS)

Minet, Y.; Bonin, B.; Gin, S.; Frugier, P.

2010-09-01

The Glass Reactivity with Allowance for the Alteration Layer Model (GRAAL) was proposed in 2008 to describe borosilicate nuclear glass alteration based on coupling an affinity law with the formation and dissolution of a passivating reactive interface. It is examined here in a simplified form in which only the affinity with respect to silicon is taken into account with a concentration at saturation Csat, and the precipitation of neoformed phases is described by an affine relation for silicon above a precipitation threshold Csat'. This simplified "analytical GRAAL" model is capable of predicting the quantities of altered glass and the silicon and boron concentration variations in analytical or semi-analytical form, and thereby identify the main characteristic quantities of the system. The model was tested against a series of laboratory experiments lasting from a few days to a few years; its sensitivity to the parameter values was examined, and the model was validated with respect to SON68 glass alteration in initially pure water. It was then applied to the alteration of a glass package in a repository over periods of up to a million years, by means of exploratory calculations comprising a sensitivity study of the internal model parameters and extrapolation to the temperatures expected in a geological repository in order to identify the parameters and mechanisms having the greatest impact on the residual alteration rate. Alteration is controlled by the precipitation of neoformed phases in every case. The transient conditions are of very limited duration with respect to either silicon or boron (no more than a 100 years, with less than 0.01% alteration of the package). In the precipitation law used in the model, the residual alteration rate and total package lifetime are determined primarily by two parameters: k' (the precipitation kinetics) and σ' (the precipitate surface area per unit volume in the geological barrier). The package lifetime is about 3 × 10 5 years at 30 °C assuming a reasonable value for σ' (10 6 m -1), and would be increased by a factor 3-6 if precipitation in the barrier were disregarded. This cursory description of precipitation will be validated and refined through specific laboratory tests at 50 °C and lower temperatures, coordinated with the development of the "geochemical GRAAL" model and with integral tests in contact with clay and canister corrosion products.

Modeling and experimental characterization of Blackglas(TM) polymer pyrolysis to ceramic and thermodynamic characterization of Blackglas(TM) ceramic

NASA Astrophysics Data System (ADS)

Wang, Feng

2000-10-01

The transformation of Blackglas(TM) polymer to ceramic is characterized by TGA-RGA/MS, Si29 and C13 NMR. Si29 NMR reveals a dependence between the postcure temperature and the microstructure of the resin. The postcure temperature that appears to give optimal mechanical and oxidative properties of Blackglas(TM) ceramic is around 150°C. The pyrolysis processing models, which are the Lumped Parameters Model (LPM), the Mechanistic Kinetic Model (MKM) and the Redistribution Reaction Model (RRM), are developed to provide an effective window of processing parameters rather than a costly, time-consuming trial and error approach. The Lumped Parameters Model (LPM) is developed to study the effects of various parameters such as temperature, curing conditions and heating rates on mass loss during the pyrolysis of resin and green composites. It can be used for the model-predictive control of the pyrolysis process; The Mechanistic Kinetic Model (MKM) is developed on the basis of known chemistry and architecture of the polysiloxane for the transformation of Blackglas(TM) polymer to ceramic and the evolution of gases. The effects of various heating protocols on the outgassing kinetics have been studied to develop an optimum protocol for a rapid pyrolysis process which gives a composite with desirable mechanical properties; The Redistribution Reaction Model (RRM) is proposed to describe how the microcompositions of silicon oxycarbide change with respect to temperature, and to the ratio O/Si in the polymer precursor. A Thermodynamic Additivity Model (TAM) is developed to estimate the heat capacity, standard heat of formation and entropy of Blackglas(TM) ceramic by means of the Neumann Kopp rule and the available thermodynamic data of the Si-C and Si-O systems. Thermal stability of this ceramic is investigated by constructing predominance diagrams, and it is shown that the internal degradation reactions, which account for a significant loss of strength, will proceed further in the Blackglas(TM) matrix than in the Nicalon fibers. This probably will induce failure in the matrix at lower temperatures than in the fibers. The predominance diagrams also explain the high temperature oxidation, reduction and volatilization experiments on silicon and silicon carbide in high vacuum.

A review of recent progress in heterogeneous silicon tandem solar cells

NASA Astrophysics Data System (ADS)

Yamaguchi, Masafumi; Lee, Kan-Hua; Araki, Kenji; Kojima, Nobuaki

2018-04-01

Silicon solar cells are the most established solar cell technology and are expected to dominate the market in the near future. As state-of-the-art silicon solar cells are approaching the Shockley-Queisser limit, stacking silicon solar cells with other photovoltaic materials to form multi-junction devices is an obvious pathway to further raise the efficiency. However, many challenges stand in the way of fully realizing the potential of silicon tandem solar cells because heterogeneously integrating silicon with other materials often degrades their qualities. Recently, above or near 30% silicon tandem solar cell has been demonstrated, showing the promise of achieving high-efficiency and low-cost solar cells via silicon tandem. This paper reviews the recent progress of integrating solar cell with other mainstream solar cell materials. The first part of this review focuses on the integration of silicon with III-V semiconductor solar cells, which is a long-researched topic since the emergence of III-V semiconductors. We will describe the main approaches—heteroepitaxy, wafer bonding and mechanical stacking—as well as other novel approaches. The second part introduces the integration of silicon with polycrystalline thin-film solar cells, mainly perovskites on silicon solar cells because of its rapid progress recently. We will also use an analytical model to compare the material qualities of different types of silicon tandem solar cells and project their practical efficiency limits.

Quantitative structure-activity relationship for the partition coefficient of hydrophobic compounds between silicone oil and air.

PubMed

Qu, Yanfei; Ma, Yongwen; Wan, Jinquan; Wang, Yan

2018-06-01

The silicon oil-air partition coefficients (K SiO/A ) of hydrophobic compounds are vital parameters for applying silicone oil as non-aqueous-phase liquid in partitioning bioreactors. Due to the limited number of K SiO/A values determined by experiment for hydrophobic compounds, there is an urgent need to model the K SiO/A values for unknown chemicals. In the present study, we developed a universal quantitative structure-activity relationship (QSAR) model using a sequential approach with macro-constitutional and micromolecular descriptors for silicone oil-air partition coefficients (K SiO/A ) of hydrophobic compounds with large structural variance. The geometry optimization and vibrational frequencies of each chemical were calculated using the hybrid density functional theory at the B3LYP/6-311G** level. Several quantum chemical parameters that reflect various intermolecular interactions as well as hydrophobicity were selected to develop QSAR model. The result indicates that a regression model derived from logK SiO/A , the number of non-hydrogen atoms (#nonHatoms) and energy gap of E LUMO and E HOMO (E LUMO -E HOMO ) could explain the partitioning mechanism of hydrophobic compounds between silicone oil and air. The correlation coefficient R 2 of the model is 0.922, and the internal and external validation coefficient, Q 2 LOO and Q 2 ext , are 0.91 and 0.89 respectively, implying that the model has satisfactory goodness-of-fit, robustness, and predictive ability and thus provides a robust predictive tool to estimate the logK SiO/A values for chemicals in application domain. The applicability domain of the model was visualized by the Williams plot.

Speckle lithography for fabricating Gaussian, quasi-random 2D structures and black silicon structures.

PubMed

Bingi, Jayachandra; Murukeshan, Vadakke Matham

2015-12-18

Laser speckle pattern is a granular structure formed due to random coherent wavelet interference and generally considered as noise in optical systems including photolithography. Contrary to this, in this paper, we use the speckle pattern to generate predictable and controlled Gaussian random structures and quasi-random structures photo-lithographically. The random structures made using this proposed speckle lithography technique are quantified based on speckle statistics, radial distribution function (RDF) and fast Fourier transform (FFT). The control over the speckle size, density and speckle clustering facilitates the successful fabrication of black silicon with different surface structures. The controllability and tunability of randomness makes this technique a robust method for fabricating predictable 2D Gaussian random structures and black silicon structures. These structures can enhance the light trapping significantly in solar cells and hence enable improved energy harvesting. Further, this technique can enable efficient fabrication of disordered photonic structures and random media based devices.

Adhesion, friction, and wear of binary alloys in contact with single-crystal silicon carbide

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1980-01-01

Sliding friction experiments, conducted with various iron base alloys (alloying elements are Ti, Cr, Mn, Ni, Rh and W) in contact with a single crystal silicon carbide /0001/ surface in vacuum are discussed. Results indicate atomic size misfit and concentration of alloying elements play a dominant role in controlling adhesion, friction, and wear properties of iron-base binary alloys. The controlling mechanism of the alloy properties is as an intrinsic effect involving the resistance to shear fracture of cohesive bonding in the alloy. The coefficient of friction generally increases with an increase in solute concentration. The coefficient of friction increases as the solute-to-iron atomic radius ratio increases or decreases from unity. Alloys having higher solute concentration produce more transfer to silicon carbide than do alloys having low solute concentrations. The chemical activity of the alloying element is also an important parameter in controlling adhesion and friction of alloys.

Fabricating and Controlling Silicon Zigzag Nanowires by Diffusion-Controlled Metal-Assisted Chemical Etching Method.

PubMed

Chen, Yun; Zhang, Cheng; Li, Liyi; Tuan, Chia-Chi; Wu, Fan; Chen, Xin; Gao, Jian; Ding, Yong; Wong, Ching-Ping

2017-07-12

Silicon (Si) zigzag nanowires (NWs) have a great potential in many applications because of its high surface/volume ratio. However, fabricating Si zigzag NWs has been challenging. In this work, a diffusion-controlled metal-assisted chemical etching method is developed to fabricate Si zigzag NWs. By tailoring the composition of etchant to change its diffusivity, etching direction, and etching time, various zigzag NWs can be easily fabricated. In addition, it is also found that a critical length of NW (>1 μm) is needed to form zigzag nanowires. Also, the amplitude of zigzag increases as the location approaches the center of the substrate and the length of zigzag nanowire increases. It is also demonstrated that such zigzag NWs can help the silicon substrate for self-cleaning and antireflection. This method may provide a feasible and economical way to fabricate zigzag NWs and novel structures for broad applications.

Fabrication of p-type porous silicon nanowire with oxidized silicon substrate through one-step MACE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Shaoyuan; Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093; Ma, Wenhui, E-mail: mwhsilicon@163.com

2014-05-01

In this paper, the simple pre-oxidization process is firstly used to treat the starting silicon wafer, and then MPSiNWs are successfully fabricated from the moderately doped wafer by one-step MACE technology in HF/AgNO{sub 3} system. The PL spectrum of MPSiNWs obtained from the oxidized silicon wafers show a large blue-shift, which can be attributed to the deep Q. C. effect induced by numerous mesoporous structures. The effects of HF and AgNO{sub 3} concentration on formation of SiNWs were carefully investigated. The results indicate that the higher HF concentration is favorable to the growth of SiNWs, and the density of SiNWsmore » is significantly reduced when Ag{sup +} ions concentrations are too high. The deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon surface were studied. According to the experimental results, a model was proposed to explain the formation mechanism of porous SiNWs by etching the oxidized starting silicon. - Graphical abstract: Schematic cross-sectional views of PSiNWs array formation by etching oxidized silicon wafer in HF/AgNO{sub 3} solution. (A) At the starting point; (B) during the etching process; and (C) after Ag dendrites remove. - Highlights: • Prior to etching, a simple pre-oxidation is firstly used to treat silicon substrate. • The medially doped p-type MPSiNWs are prepared by one-step MACE. • Deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon are studied. • A model is finally proposed to explain the formation mechanism of PSiNWs.« less

Hydrogen density of states and defects densities in a-Si:H

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deane, S.C.; Powell, M.J.; Robertson, J.

1996-12-31

The properties of hydrogenated amorphous silicon (a-Si:H) and its devices depend fundamentally on the density of states (DOS) in the gap due to dangling bonds. It is generally believed that the density of dangling bonds is controlled by a chemical equilibrium with the weak Si-Si bonds which form the localized valence band tail states. Further details are given of a unified model of the hydrogen density of states and defect pool of a-Si:H. The model is compared to other defect models and extended to describe a-Si alloys and the creation of valence band tail states during growth.

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

PubMed Central

Hazut, Ori; Agarwala, Arunava; Subramani, Thangavel; Waichman, Sharon; Yerushalmi, Roie

2013-01-01

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms. In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station. PMID:24326774

Metal-insulator transition properties of sputtered silicon-doped and un-doped vanadium dioxide films at terahertz range

NASA Astrophysics Data System (ADS)

Zhang, Huafu; Wu, Zhiming; Niu, Ruihua; Wu, Xuefei; he, Qiong; Jiang, Yadong

2015-03-01

Silicon-doped and un-doped vanadium dioxide (VO2) films were synthesized on high-purity single-crystal silicon substrates by means of reactive direct current magnetron sputtering followed by thermal annealing. The structure, morphology and metal-insulator transition properties of silicon-doped VO2 films at terahertz range were measured and compared to those of un-doped VO2 films. X-ray diffraction and scanning electron microscopy indicated that doping the films with silicon significantly affects the preferred crystallographic orientation and surface morphologies (grain size, pores and characteristics of grain boundaries). The temperature dependence of terahertz transmission shows that the transition temperature, hysteresis width and transition sharpness greatly depend on the silicon contents while the transition amplitude was relatively insensitive to the silicon contents. Interestingly, the VO2 film doped with a silicon content of 4.6 at.% shows excellent terahertz switching characteristics, namely a small hysteresis width of 4.5 °C, a giant transmission modulation ratio of about 82% and a relatively low transition temperature of 56.1 °C upon heating. This work experimentally indicates that silicon doping can effectively control not only the surface morphology but also the metal-insulator transition characteristics of VO2 films at terahertz range.

Compliant energy and momentum conservation in NEGF simulation of electron-phonon scattering in semiconductor nano-wire transistors

NASA Astrophysics Data System (ADS)

Barker, J. R.; Martinez, A.; Aldegunde, M.

2012-05-01

The modelling of spatially inhomogeneous silicon nanowire field-effect transistors has benefited from powerful simulation tools built around the Keldysh formulation of non-equilibrium Green function (NEGF) theory. The methodology is highly efficient for situations where the self-energies are diagonal (local) in space coordinates. It has thus been common practice to adopt diagonality (locality) approximations. We demonstrate here that the scattering kernel that controls the self-energies for electron-phonon interactions is generally non-local on the scale of at least a few lattice spacings (and thus within the spatial scale of features in extreme nano-transistors) and for polar optical phonon-electron interactions may be very much longer. It is shown that the diagonality approximation strongly under-estimates the scattering rates for scattering on polar optical phonons. This is an unexpected problem in silicon devices but occurs due to strong polar SO phonon-electron interactions extending into a narrow silicon channel surrounded by high kappa dielectric in wrap-round gate devices. Since dissipative inelastic scattering is already a serious problem for highly confined devices it is concluded that new algorithms need to be forthcoming to provide appropriate and efficient NEGF tools.

Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells

DOE PAGES

Hofstetter, Jasmin; del Cañizo, Carlos; Wagner, Hannes; ...

2015-10-15

Silicon wafers comprise approximately 40% of crystalline silicon module cost and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled tomore » effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. As a result, to accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements.« less

Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing

NASA Astrophysics Data System (ADS)

Yuan, Zhishan; Wang, Chengyong; Chen, Ke; Ni, Zhonghua; Chen, Yunfei

2017-08-01

In this paper, amorphous silicon nanowires (α-SiNWs) were synthesized on (100) Si substrate with silicon oxide film by Cu catalyst-driven solid-liquid-solid mechanism (SLS) during annealing process (1080 °C for 30 min under Ar/H2 atmosphere). Micro size Cu pattern fabrication decided whether α-SiNWs can grow or not. Meanwhile, those micro size Cu patterns also controlled the position and density of wires. During the annealing process, Cu pattern reacted with SiO2 to form Cu silicide. More important, a diffusion channel was opened for Si atoms to synthesis α-SiNWs. What is more, the size of α-SiNWs was simply controlled by the annealing time. The length of wire was increased with annealing time. However, the diameter showed the opposite tendency. The room temperature resistivity of the nanowire was about 2.1 × 103 Ω·cm (84 nm diameter and 21 μm length). This simple fabrication method makes application of α-SiNWs become possible.

Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hofstetter, Jasmin; del Cañizo, Carlos; Wagner, Hannes

Silicon wafers comprise approximately 40% of crystalline silicon module cost and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled tomore » effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. As a result, to accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements.« less

Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin

We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down tomore » the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.« less

Low temperature coefficient of resistance and high gage factor in beryllium-doped silicon

NASA Technical Reports Server (NTRS)

Robertson, J. B.; Littlejohn, M. A.

1974-01-01

The gage factor and resistivity of p-type silicon doped with beryllium was studied as a function of temperature, crystal orientation, and beryllium doping concentration. It was shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gage factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, whereas the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

A theoretical study on the optical properties of black silicon

NASA Astrophysics Data System (ADS)

Ma, Shijun; Liu, Shuang; Xu, Qinwei; Xu, Junwen; Lu, Rongguo; Liu, Yong; Zhong, Zhiyong

2018-03-01

There is a wide application prospect in black silicon, especially in solar cells and photoelectric detectors. For further optimization of black silicon, it is important to study its optical properties. Especially, the influence of the surface nanostructures on these properties and the light propagation within the nanostructures are relevant. In this paper, two kinds of black silicon models are studied via the finite differences time domain method. The simulated reflectance spectra matches well with the measured curve. Also, the light intensity distribution within the nanostructures shows that near 80% of the incident light are redirected and subjected to internal reflection, which provides powerful support for the good light trapping properties of black silicon.

Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region

NASA Astrophysics Data System (ADS)

Franta, Daniel; Franta, Pavel; Vohánka, Jiří; Čermák, Martin; Ohlídal, Ivan

2018-05-01

Optical measurements of transmittance in the far infrared region performed on crystalline silicon wafers exhibit partially coherent interference effects appropriate for the determination of thicknesses of the wafers. The knowledge of accurate spectral and temperature dependencies of the optical constants of crystalline silicon in this spectral region is crucial for the determination of its thickness and vice versa. The recently published temperature dependent dispersion model of crystalline silicon is suitable for this purpose. Because the linear thermal expansion of crystalline silicon is known, the temperatures of the wafers can be determined with high precision from the evolution of the interference patterns at elevated temperatures.

Preparation of electrochemically active silicon nanotubes in highly ordered arrays

PubMed Central

Grünzel, Tobias; Lee, Young Joo; Kuepper, Karsten

2013-01-01

Summary Silicon as the negative electrode material of lithium ion batteries has a very large capacity, the exploitation of which is impeded by the volume changes taking place upon electrochemical cycling. A Si electrode displaying a controlled porosity could circumvent the difficulty. In this perspective, we present a preparative method that yields ordered arrays of electrochemically competent silicon nanotubes. The method is based on the atomic layer deposition of silicon dioxide onto the pore walls of an anodic alumina template, followed by a thermal reduction with lithium vapor. This thermal reduction is quantitative, homogeneous over macroscopic samples, and it yields amorphous silicon and lithium oxide, at the exclusion of any lithium silicides. The reaction is characterized by spectroscopic ellipsometry for thin silica films, and by nuclear magnetic resonance and X-ray photoelectron spectroscopy for nanoporous samples. After removal of the lithium oxide byproduct, the silicon nanotubes can be contacted electrically. In a lithium ion electrolyte, they then display the electrochemical waves also observed for other bulk or nanostructured silicon systems. The method established here paves the way for systematic investigations of how the electrochemical properties (capacity, charge/discharge rates, cyclability) of nanoporous silicon negative lithium ion battery electrode materials depend on the geometry. PMID:24205460

Technology of an adhesive silicone film as drug carrier in transdermal therapy. I: Analytical methods used for characterization and design of the universal elastomer layers.

PubMed

Mojsiewicz-Pieńkowska, Krystyna; Jamrógiewicz, Marzena; Zebrowska, Maria; Sznitowska, Małgorzata; Centkowska, Katarzyna

2011-08-25

Silicone polymers possess unique properties, which make them suitable for many different applications, for example in the pharmaceutical and medical industry. To create an adhesive silicone film, the appropriate silicone components have to be chosen first. From these components two layers were made: an adhesive elastomer applied on the skin, and a non-adhesive elastomer on the other side of the film. The aim of this study was to identify a set of analytical methods that can be used for detailed characterization of the elastomer layers, as needed when designing new silicone films. More specifically, the following methods were combined to detailed identification of the silicone components: Fourier transform infrared spectroscopy (FTIR), proton nuclear magnetic resonance (¹H NMR) and size exclusion chromatography with evaporative light scattering detector (SEC-ELSD). It was demonstrated that these methods together with a rheological analysis are suitable for controlling the cross-linking reaction, thus obtaining the desired properties of the silicone film. Adhesive silicone films can be used as universal materials for medical use, particularly for effective treatment of scars and keloids or as drug carriers in transdermal therapy.

Radiation damage in lithium-counterdoped N/P silicon solar cells

NASA Technical Reports Server (NTRS)

Hermann, A. M.; Swartz, C. K.; Brandhorst, H. W., Jr.; Weinberg, I.

1980-01-01

The radiation resistance and low-temperature annealing properties of lithium-counterdoped n(+)-p silicon solar cells are investigated. Cells fabricated from float zone and Czochralski grown silicon were irradiated with 1 MeV electrons and their performance compared to that of 0.35 ohm-cm control cells. The float zone cells demonstrated superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Annealing kinetics were found to lie between first and second order for relatively short times, and the most likely annealing mechanism was found to be the diffusion of lithium to defects with the subsequent neutralization of defects by combination with lithium. Cells with zero lithium gradients exhibited the best radiation resistance.

Development of high-efficiency solar cells on silicon web

NASA Technical Reports Server (NTRS)

Meier, D. L.; Greggi, J.; Rai-Choudhury, P.

1986-01-01

Work is reported aimed at identifying and reducing sources of carrier recombination both in the starting web silicon material and in the processed cells. Cross-sectional transmission electron microscopy measurements of several web cells were made and analyzed. The effect of the heavily twinned region on cell efficiency was modeled, and the modeling results compared to measured values for processed cells. The effects of low energy, high dose hydrogen ion implantation on cell efficiency and diffusion length were examined. Cells were fabricated from web silicon known to have a high diffusion length, with a new double layer antireflection coating being applied to these cells. A new contact system, to be used with oxide passivated cells and which greatly reduces the area of contact between metal and silicon, was designed. The application of DLTS measurements to beveled samples was further investigated.

Iodine 125 Brachytherapy With Vitrectomy and Silicone Oil in the Treatment of Uveal Melanoma: 1-to-1 Matched Case-Control Series

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCannel, Tara A., E-mail: TMcCannel@jsei.ucla.edu; McCannel, Colin A.

Purpose: We initially reported the radiation-attenuating effect of silicone oil 1000 centistokes for iodine 125. The purpose of this report was to compare the clinical outcomes in case patients who had iodine 125 brachytherapy with vitrectomy and silicone oil 1000 centistokes with the outcomes in matched control patients who underwent brachytherapy alone. Methods and Materials: Consecutive patients with uveal melanoma who were treated with iodine 125 plaque brachytherapy and vitrectomy with silicone oil with minimum 1-year follow-up were included. Control patients who underwent brachytherapy alone were matched for tumor size, location, and sex. Baseline patient and tumor characteristics and tumor response tomore » radiation, final visual acuity, macular status, central macular thickness by ocular coherence tomography (OCT), cataract progression, and metastasis at last follow-up visit were compared. Surgical complications were also determined. Results: Twenty case patients met the inclusion criteria. The average follow-up time was 22.1 months in case patients and 19.4 months in control patients. The final logMAR vision was 0.81 in case patients and 1.1 in control patients (P=.071); 8 case patients and 16 control patients had abnormal macular findings (P=.011); and the average central macular thickness by OCT was 293.2 μm in case patients and 408.5 μm in control patients (P=.016). Eleven case patients (55%) and 1 control patient (5%) had required cataract surgery at last follow-up (P=.002). Four patients in the case group and 1 patient in the control group experienced metastasis (P=.18). Among the cases, intraoperative retinal tear occurred in 3 patients; total serous retinal detachment and macular hole developed in 1 case patient each. There was no case of rhegmatogenous retinal detachment, treatment failure, or local tumor dissemination in case patients or control patients. Conclusions: With up to 3 years of clinical follow-up, silicone oil during brachytherapy for the treatment of uveal melanoma resulted in fewer abnormal maculas, lower central macular thickness on OCT, and a trend toward better final visual acuity in comparison with matched control patients who underwent brachytherapy alone.« less

Comparative in vitro encrustation studies of biomaterials in human urine.

PubMed

Gleeson, M J; Glueck, J A; Feldman, L; Griffith, D P; Noon, G P

1989-01-01

A new dynamic in vitro human urine model was developed to compare biomaterial encrustation. The model incorporates a capacity to study seven biomaterials, a daily urine inflow of 500 ml, a reservoir capacity of 700 ml, and a turnover rate of four days. Encrustation studies performed for 2 weeks in sterile and infected (Proteus Vulgaris) urine on segmented polyether polyurethane, polyester polyurethane, silicone (Mitsui), silicone (Dow Corning), biothane, biolor 1 and biolor 11 demonstrated that biolor 11 (silicone-carbon composite) caused the least encrustation. Encrustation analysis showed brushite in the sterile model and struvite and ammonium acid urate in the infected mode I. Biolor II should have beneficial applications in catheters, stents and prosthetics which come in contact with urine.

Infrared Dielectric Properties of Low-stress Silicon Nitride

NASA Technical Reports Server (NTRS)

Cataldo, Giuseppe; Beall, James A.; Cho, Hsiao-Mei; McAndrew, Brendan; Niemack, Michael D.; Wollack, Edward J.

2012-01-01

Silicon nitride thin films play an important role in the realization of sensors, filters, and high-performance circuits. Estimates of the dielectric function in the far- and mid-IR regime are derived from the observed transmittance spectra for a commonly employed low-stress silicon nitride formulation. The experimental, modeling, and numerical methods used to extract the dielectric parameters with an accuracy of approximately 4% are presented.

Surface Coating of Gypsum-Based Molds for Maxillofacial Prosthetic Silicone Elastomeric Material: The Surface Topography.

PubMed

Khalaf, Salah; Ariffin, Zaihan; Husein, Adam; Reza, Fazal

2015-07-01

This study aimed to compare the surface roughness of maxillofacial silicone elastomers fabricated in noncoated and coated gypsum materials. This study was also conducted to characterize the silicone elastomer specimens after surfaces were modified. A gypsum mold was coated with clear acrylic spray. The coated mold was then used to produce modified silicone experimental specimens (n = 35). The surface roughness of the modified silicone elastomers was compared with that of the control specimens, which were prepared by conventional flasking methods (n = 35). An atomic force microscope (AFM) was used for surface roughness measurement of silicone elastomer (unmodified and modified), and a scanning electron microscope (SEM) was used to evaluate the topographic conditions of coated and noncoated gypsum and silicone elastomer specimens (unmodified and modified) groups. After the gypsum molds were characterized, the fabricated silicone elastomers molded on noncoated and coated gypsum materials were evaluated further. Energy-dispersive X-ray spectroscopy (EDX) analysis of gypsum materials (noncoated and coated) and silicone elastomer specimens (unmodified and modified) was performed to evaluate the elemental changes after coating was conducted. Independent t test was used to analyze the differences in the surface roughness of unmodified and modified silicone at a significance level of p < 0.05. Roughness was significantly reduced in the silicone elastomers processed against coated gypsum materials (p < 0.001). The AFM and SEM analysis results showed evident differences in surface smoothness. EDX data further revealed the presence of the desired chemical components on the surface layer of unmodified and modified silicone elastomers. Silicone elastomers with lower surface roughness of maxillofacial prostheses can be obtained simply by coating a gypsum mold. © 2014 by the American College of Prosthodontists.

Photonic Crystal Sensors Based on Porous Silicon

PubMed Central

Pacholski, Claudia

2013-01-01

Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential. PMID:23571671

Composition and optical properties tunability of hydrogenated silicon carbonitride thin films deposited by reactive magnetron sputtering

NASA Astrophysics Data System (ADS)

Bachar, A.; Bousquet, A.; Mehdi, H.; Monier, G.; Robert-Goumet, C.; Thomas, L.; Belmahi, M.; Goullet, A.; Sauvage, T.; Tomasella, E.

2018-06-01

Radiofrequency reactive magnetron sputtering was used to deposit hydrogenated amorphous silicon carbonitride (a-SiCxNy:H) at 400 °C by sputtering a silicon target under CH4 and N2 reactive gas mixture. Rutherford backscattering spectrometry revealed that the change of reactive gases flow rate (the ratio R = FN2/(FN2+FCH4)) induced a smooth chemical composition tunability from a silicon carbide-like film for R = 0 to a silicon nitride-like one at R = 1 with a large area of silicon carbonitrides between the two regions. The deconvolution of Fourier Transform InfraRed and X-ray photoelectron spectroscopy spectrum highlighted a shift of the chemical environment of the deposited films corresponding to the changes seen by RBS. The consequence of these observations is that a control of refractive index in the range of [1.9-2.5] at λ = 633 nm and optical bandgap in the range [2 eV-3.8 eV] have been obtained which induces that these coatings can be used as antireflective coatings in silicon photovoltaic cells.

Molecular dynamics simulations of the first charge of a Li-ion-Si-anode nanobattery.

PubMed

Galvez-Aranda, Diego E; Ponce, Victor; Seminario, Jorge M

2017-04-01

Rechargeable lithium-ion batteries are the most popular devices for energy storage but still a lot of research needs to be done to improve their cycling and storage capacity. Silicon has been proposed as an anode material because of its large theoretical capacity of ∼3600 mAh/g. Therefore, focus is needed on the lithiation process of silicon anodes where it is known that the anode increases its volume more than 300%, producing cracking and other damages. We performed molecular dynamics atomistic simulations to study the swelling, alloying, and amorphization of a silicon nanocrystal anode in a full nanobattery model during the first charging cycle. A dissolved salt of lithium hexafluorophosphate in ethylene carbonate was chosen as the electrolyte solution and lithium cobalt oxide as cathode. External electric fields are applied to emulate the charging, causing the migration of the Li-ions from the cathode to the anode, by drifting through the electrolyte solution, thus converting pristine Si gradually into Li 14 Si 5 when fully lithiated. When the electric field is applied to the nanobattery, the temperature never exceeds 360 K due to a temperature control imposed resembling a cooling mechanism. The volume of the anode increases with the amorphization of the silicon as the external field is applied by creating a layer of LiSi alloy between the electrolyte and the silicon nanocrystal and then, at the arrival of more Li-ions changing to an alloy, where the drift velocity of Li-ions is greater than the velocity in the initial nanocrystal structure. Charge neutrality is maintained by concerted complementary reduction-oxidation reactions at the anode and cathode, respectively. In addition, the nanobattery model developed here can be used to study charge mobility, current density, conductance and resistivity, among several other properties of several candidate materials for rechargeable batteries and constitutes the initial point for further studies on the formation of the solid electrolyte interphase in the anode. Graphical Abstract Nanobattery: LiCoO 2 cathode, electrolyte solution of 1M Li + PF 6 - in ethylene carbonate, and Si crystal anode, which changes its volume due to lithiation during the first charge.

A blood-mimicking fluid for particle image velocimetry with silicone vascular models

NASA Astrophysics Data System (ADS)

Yousif, Majid Y.; Holdsworth, David W.; Poepping, Tamie L.

2011-03-01

For accurate particle image velocimetry measurements in hemodynamics studies, it is important to use a fluid with a refractive index ( n) matching that of the vascular models (phantoms) and ideally a dynamic viscosity matching human blood. In this work, a blood-mimicking fluid (BMF) composed of water, glycerol, and sodium iodide was formulated for a range of refractive indices to match most common silicone elastomers ( n = 1.40-1.43) and with corresponding dynamic viscosity within the average cited range of healthy human blood (4.4 ± 0.5 cP). Both refractive index and viscosity were attained at room temperature (22.2 ± 0.2°C), which eliminates the need for a temperature-control system. An optimally matched BMF, suitable for use in a vascular phantom ( n = 1.4140 ± 0.0008, Sylgard 184), was demonstrated with composition (by weight) of 47.38% water, 36.94% glycerol (44:56 glycerol-water ratio), and 15.68% sodium iodide salt, resulting in a dynamic viscosity of 4 .31 ± 0 .03 cP.