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Sample records for modified laser etching

  1. Chemical etching mechanism and properties of microstructures in sapphire modified by femtosecond laser

    NASA Astrophysics Data System (ADS)

    Liu, Manyu; Hu, Youwang; Sun, Xiaoyan; Wang, Cong; Zhou, Jianying; Dong, Xinran; Yin, Kai; Chu, Dongkai; Duan, Ji'an

    2017-01-01

    Sapphire, with extremely high hardness, high-temperature stability and wear resistance, often corroded in molten KOH at 300 °C after processing. The fabrication of microstructures on sapphire substrate performed by femtosecond laser irradiation combined with KOH solution chemical etching at room temperature is presented. It is found that this method reduces the harsh requirements of sapphire corrosion. After femtosecond irradiation, the sapphire has a high corrosion speed at room temperature. Through the analysis of Raman spectrum and XRD spectrum, a novel insight of femtosecond laser interaction with sapphire (α-Al2O3) is proposed. Results indicated that grooves on sapphire surface were formed by the lasers ablation removal, and the groove surface was modified in a certain depth. The modified area of the groove surface was changed from α-Al2O3 to γ-Al2O3. In addition, the impacts of three experimental parameters, laser power, scanning velocities and etching time, on the width and depth of microstructures are investigated, respectively. The modified area dimension is about 2 μm within limits power and speed. This work could fabricate high-quality arbitrary microstructures and enhance the performance of sapphire processing.

  2. Laser-driven fusion etching process

    DOEpatents

    Ashby, Carol I. H.; Brannon, Paul J.; Gerardo, James B.

    1989-01-01

    The surfaces of solid ionic substrates are etched by a radiation-driven chemical reaction. The process involves exposing an ionic substrate coated with a layer of a reactant material on its surface to radiation, e.g. a laser, to induce localized melting of the substrate which results in the occurrance of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic salt substrates, e.g., a solid inorganic salt such as LiNbO.sub.3, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.

  3. Laser-driven fusion etching process

    DOEpatents

    Ashby, C.I.H.; Brannon, P.J.; Gerardo, J.B.

    1987-08-25

    The surfaces of solids are etched by a radiation-driven chemical reaction. The process involves exposing a substrate coated with a layer of a reactant material on its surface to radiation, e.g., a laser, to induce localized melting of the substrate which results in the occurrence of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic substrates, e.g., LiNbO/sub 3/, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.

  4. Comparison of alkaline phosphatase activity of MC3T3-E1 cells cultured on different Ti surfaces: modified sandblasted with large grit and acid-etched (MSLA), laser-treated, and laser and acid-treated Ti surfaces

    PubMed Central

    Li, Lin-Jie; Kim, So-Nam

    2016-01-01

    PURPOSE In this study, the aim of this study was to evaluate the effect of implant surface treatment on cell differentiation of osteoblast cells. For this purpose, three surfaces were compared: (1) a modified SLA (MSLA: sand-blasted with large grit, acid-etched, and immersed in 0.9% NaCl), (2) a laser treatment (LT: laser treatment) titanium surface and (3) a laser and acid-treated (LAT: laser treatment, acid-etched) titanium surface. MATERIALS AND METHODS The MSLA surfaces were considered as the control group, and LT and LAT surfaces as test groups. Alkaline phosphatase expression (ALP) was used to quantify osteoblastic differentiation of MC3T3-E1 cell. Surface roughness was evaluated by a contact profilometer (URFPAK-SV; Mitutoyo, Kawasaki, Japan) and characterized by two parameters: mean roughness (Ra) and maximum peak-to-valley height (Rt). RESULTS Scanning electron microscope revealed that MSLA (control group) surface was not as rough as LT, LAT surface (test groups). Alkaline phosphatase expression, the measure of osteoblastic differentiation, and total ALP expression by surface-adherent cells were found to be highest at 21 days for all three surfaces tested (P<.05). Furthermore, ALP expression levels of MSLA and LAT surfaces were significantly higher than expression levels of LT surface-adherent cells at 7, 14, and 21 days, respectively (P<.05). However, ALP expression levels between MSLA and LAT surface were equal at 7, 14, and 21 days (P>.05). CONCLUSION This study suggested that MSLA and LAT surfaces exhibited more favorable environment for osteoblast differentiation when compared with LT surface, the results that are important for implant surface modification studies. PMID:27350860

  5. Laser etching: A new technology to identify Florida grapefruit

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Laser labeling of fruits and vegetables is an alternative means to label produce. Low energy CO2 laser beam etches the surface showing the contrasting underlying layer. These etched surfaces can promote water loss and potentially allowing for pathogen entry. The long term effects of laser labeling o...

  6. The influence of laser-induced surface modifications on the backside etching process

    NASA Astrophysics Data System (ADS)

    Zimmer, K.; Böhme, R.; Ruthe, D.; Rauschenbach, B.

    2007-05-01

    Spectroscopic measurements in the UV/VIS region show reduced transmission through laser-induced backside wet etching (LIBWE) of fused silica. Absorption coefficients of up to 10 5 cm -1 were calculated from the transmission measurements for a solid surface layer of about 50 nm. The temperatures near the interface caused by laser pulse absorption, which were analytically calculated using a new thermal model considering interface and liquid volume absorption, can reach 10 4 K at typical laser fluences. The high absorption coefficients and the extreme temperatures give evidence for an ablation-like process that is involved in the LIBWE process causing the etching of the modified near-surface region. The confinement of the ablation/etching process to the modified near-surface material region can account for the low etch rates observed in comparison to front-side ablation.

  7. In vitro evaluation of microleakage under orthodontic brackets using two different laser etching, self etching and acid etching methods.

    PubMed

    Hamamci, Nihal; Akkurt, Atilim; Başaran, Güvenç

    2010-11-01

    This study evaluated the microleakage of brackets bonded by four different enamel etching techniques. Forty freshly extracted human premolars were divided randomly into four equal groups and received the following treatment: group 1, acid etching; group 2, self-etching primer (SEP); group 3, erbium:yttrium-aluminum-garnet (Er:YAG) laser etching; and group 4, erbium, chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG) laser etching. After photopolymerization, the teeth were kept in distilled water for 1 month and then subjected to 500 thermal cycles. Then, the specimens were sealed with nail varnish, stained with 0.5% basic fuchsin for 24 h, sectioned, and examined under a stereomicroscope. In addition, they were scored for marginal microleakage at the adhesive-enamel and bracket-adhesive interfaces from the incisal and gingival margins. Statistical analyses consisted of the Kruskal-Wallis test and the Mann-Whitney U test with Bonferroni correction. Microleakage occurred between the adhesive-enamel and bracket-adhesive interfaces in all groups. For the adhesive-enamel surface, a significant difference was observed between group 1 and groups 2 (P = 0.011), 3 (P = 0.002), and 4 (P = 0.000) on the gingival side. Overall, significant differences were observed between group 1 and groups 3 (P = 0.003) and 4 (P = 0.000). In dental bonding procedures, acid etching was found to result in the least microleakage. Since etching with a laser decreases the risk of caries and is time-saving, it may serve as an alternative to acid etching.

  8. High performance surface-emitting lasers with dry etched facets

    NASA Astrophysics Data System (ADS)

    Ou, S. S.; Jansen, M.; Yang, J. J.; Sergant, M.; Mawst, L. J.; Botez, D.; Roth, T. J.; Hess, C.; Tu, C.

    1992-12-01

    The fabrication, performance characteristics, and applications of monolithic in-plane surface-emitting lasers (IPSELs) with dry-etched 45-degree micromirrors are reviewed. Several types of such laser diode structures in both junction-up and junction-down configurations are considered. The performance goals for IPSELs with 45-degree micromirrors are high power and efficiency, high duty cycle and CW operation, good reliability, and high fabrication yields. The proposed approach for achieving these goals includes uniform quantum well material growth and dry etching of the laser micromirrors with tight fabrication tolerances.

  9. Femtosecond laser etching of dental enamel for bracket bonding.

    PubMed

    Kabas, Ayse Sena; Ersoy, Tansu; Gülsoy, Murat; Akturk, Selcuk

    2013-09-01

    The aim is to investigate femtosecond laser ablation as an alternative method for enamel etching used before bonding orthodontic brackets. A focused laser beam is scanned over enamel within the area of bonding in a saw tooth pattern with a varying number of lines. After patterning, ceramic brackets are bonded and bonding quality of the proposed technique is measured by a universal testing machine. The results are compared to the conventional acid etching method. Results show that bonding strength is a function of laser average power and the density of the ablated lines. Intrapulpal temperature changes are also recorded and observed minimal effects are observed. Enamel surface of the samples is investigated microscopically and no signs of damage or cracking are observed. In conclusion, femtosecond laser exposure on enamel surface yields controllable patterns that provide efficient bonding strength with less removal of dental tissue than conventional acid-etching technique.

  10. Experimental study of 248nm excimer laser etching of alumina

    NASA Astrophysics Data System (ADS)

    Hu, Hongtao; Shao, Jingzhen; Wang, Xi; Fang, Xiaodong

    2016-10-01

    The 248 nm excimer laser etching characteristic of alumina ceramic and sapphire had been studied using different laser fluence and different number of pulses. And the interaction mechanism of 248 nm excimer laser with alumina ceramic and sapphire had been analyzed. The results showed that when the laser fluence was less than 8 J/cm2, the etching depth of alumina ceramic and sapphire were increased with the increase of laser fluence and number of pulses. At the high number pulses and high-energy, the surface of the sapphire had no obvious melting phenomenon, and the alumina ceramic appeared obvious melting phenomenon. The interaction mechanism of excimer laser with alumina ceramics and sapphire was mainly two-photon absorption. But because of the existence of impurities and defects, the coupling between the laser radiation and ceramic and sapphire was strong, and the thermal evaporation mechanism was also obvious.

  11. In Vitro Evaluation of Microleakage Around Orthodontic Brackets Using Laser Etching and Acid Etching Methods

    PubMed Central

    Toodehzaeim, Mohammad Hossein; Yassaei, Sogra; Karandish, Maryam; Farzaneh, Sedigeh

    2014-01-01

    Objective: path of microleakage between the enamel and adhesive potentially allows microbial ingress that may consequently cause enamel decalcification. The aim of this study was to compare microleakage of brackets bonded either by laser or acid etching techniques. Materials and Method: The specimens were 33 extracted premolars that were divided into three groups as the acid etching group (group 1), laser etching with Er:YAG at 100 mJ and 15 Hz for 15s (group 2), and laser etching with Er:YAG at 140 mJ and 15 Hz for 15s (group 3). After photo polymerization, the teeth were subjected to 500 thermal cycles. Then the specimens were sealed with nail varnish, stained with 2% methylen blue for 24hs, sectioned, and examined under a stereomicroscope. They were scored for marginal microleakage that occurred between the adhesive-enamel and bracket-adhesive interfaces from the occlusal and gingival margins. Data were analyzed with the Kruskal- Wallis test. Results: For the adhesive-enamel and bracket-adhesive surfaces, significant differences were not observed between the three groups. Conclusion: According to this study, the Er:YAG laser with 1.5 and 2.1 watt settings may be used as an adjunctive for preparing the surface for orthodontic bracket bonding. PMID:25628661

  12. CO2 laser ablative etching of polyethylene terephthalate

    NASA Astrophysics Data System (ADS)

    Dyer, P. E.; Oldershaw, G. A.; Sidhu, J.

    1989-06-01

    Films of polyethylene terephthalate (PET) can be successfully etched with 9 μm radiation from a pulsed TEA CO2 laser. The relationship between etch depth and fluence is broadly similar to that observed for excimer laser etching but with a less well-defined threshold. Time-resolved photoacoustic measurements of stress waves generated in the interaction show that at a fluence of 1.8 J cm-2 ablation occurs 100 200 ns after the start of the laser pulse, a time which is consistent with the rate of thermal decomposition of PET. The volatile products of ablation are carbon monoxide, carbon dioxide, methane, ethyne, ethene, benzene, ethanal, and small quantities of other products. For fluences close to and appreciably above the threshold the ablated material consists predominantly of involatile species of relatively high molecular weight, whereas at higher fluences substantial fragmentation of the polymer to small molecules occurs.

  13. Investigation of acid-etched CO2 laser ablated enamel surfaces using polarization sensitive optical coherence tomography

    NASA Astrophysics Data System (ADS)

    Nahm, Byung J.; Kang, Hobin; Chan, Kenneth; Fried, Daniel

    2012-01-01

    A carbon dioxide laser operating at the highly absorbed wavelength of 9.3μm with a pulse duration of 10-15μs is ideally suited for caries removal and caries prevention. The enamel thermally modified by the laser has enhanced resistance to acid dissolution. This is an obvious advantage for caries prevention; however, it is often necessary to etch the enamel surface to increase adhesion to composite restorative materials and such surfaces may be more resistant to etching. The purpose of the study was to non-destructively measure the susceptibility of laser-ablated enamel surfaces to acid dissolution before and after acid-etching using Polarization Sensitive Optical Coherence Tomography (PS-OCT). PS-OCT was used to acquire images of bovine enamel surfaces after exposure to laser irradiation at ablative fluence, acid-etching, and a surface softened dissolution model. The integrated reflectivity from lesion and the lesion depth were measured using PS-OCT. Samples were also sectioned for examination by Polarized Light Microscopy (PLM). PS-OCT images showed that acid-etching greatly accelerated the formation of subsurface lesions on both laser-irradiated and non-irradiated surfaces (P<0.05). A 37.5% phosphoric acid etch removed the laser modified enamel layer after 5-10 seconds.

  14. LEAN: laser-etched aqua number

    NASA Astrophysics Data System (ADS)

    Schell, Karel J.

    1998-04-01

    A security device on a banknote has to be recognized immediately by the general public and has to enable the general public to establish the genuineness of the banknote. This is the so-called first line of defense. Recently the development of the ability to establish the genuiness has gained momentum and is called 'self authenticating.' Comparing the banknote number with a 'watermark number' can do authenticating. The watermark number is engraved by a laser beam in the paper and is -- as the printed number -- different for each note. Recent progress in the material processing by laser enables the engraving of the individual watermark number for each banknote in line with the production process.

  15. 21 CFR 179.43 - Carbon dioxide laser for etching food.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 3 2014-04-01 2014-04-01 false Carbon dioxide laser for etching food. 179.43... § 179.43 Carbon dioxide laser for etching food. Carbon dioxide laser light may be safely used for... consists of a carbon dioxide laser designed to emit pulsed infrared radiation with a wavelength of...

  16. Influence of etching time on bond strength in dentin irradiated with erbium lasers.

    PubMed

    Ferreira, Leila Soares; Apel, Christian; Francci, Carlos; Simoes, Alyne; Eduardo, Carlos P; Gutknecht, Norbert

    2010-11-01

    The purpose of this in vitro study was to evaluate the effect of etching time on the tensile bond strength (TBS) of a conventional adhesive bonded to dentin previously irradiated with erbium:yttrium-aluminum-garnet (Er:YAG) and erbium, chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG) lasers. Buccal and lingual surfaces of 45 third molars were flattened until the dentin was exposed and randomly assigned to three groups (n = 30) according to the dentin treatment: control (not irradiated), irradiated with Er:YAG (1 W; 250 mJ; 4 Hz; 80.6 J/cm(2)) laser or Er,Cr:YSGG (4 W; 200 mJ; 20 Hz; 71.4 J/cm(2)) laser, and into three subgroups (n = 10) according to acid etching time (15 s, 30 s or 60 s) for each experimental group. After acid etching, the adhesive was applied, followed by the construction of an inverted cone of composite resin. The samples were immersed in distilled water (37 degrees C for 24 h) and subjected to TBS test [50 kilogram-force (kgf), 0.5 mm/min]. Data were analyzed by analysis of variance (ANOVA) and Tukey statistical tests (P < or = 0.05). Control group samples presented significant higher TBS values than those of all lased groups. Both irradiated groups exhibited similar TBS values. Samples subjected to the different etching times in each experimental group presented similar TBS. Based on the conditions of this in vitro study we concluded that Er:YAG and Er,Cr:YSGG laser irradiation of the dentin weakens the bond strength of the adhesive. Moreover, increased etching time is not able to modify the bonding strength of the adhesive to irradiated dentin.

  17. Diode Laser Measurements in an Inductively Coupled GEC Cell for Oxide Etching

    NASA Astrophysics Data System (ADS)

    Perry, Lee; Deering, Glen; Koltunski, Laure; Anderson, Harold

    1998-10-01

    Diode laser absorption measurements have been made on CF, CF2 and CO radicals in an inductively coupled GEC reference cell. The GEC reference cell was modified with a quartz confinement ring around the source region to stabilize the plasma. Optical emission and Langmuir probe studies indicated this modification resulted in fluorocarbon discharges with a plasma chemistry similar to that found in commercial etch tools. The experiments in this study focused on radical concentrations found in the reactor under typical high-density plasma etching conditions. In a 10 mTorr C_2F6 discharge at 300 W source power and 100 W bias power, etching proceeded at about 5000 Åmin-1. A range of source power and bias power conditions, from 100 to 400 W and from 0 to 130 W, respectively, was employed. The time evolution of CF, CF2 and CO in a C_2F6 plasma was monitored during an approximate 2 minute etch cycle. Chamber cleanliness and bias was found to exert a strong influence on radical densities. The data is expected to provide an important database for models of oxide etching in inductively coupled plasma tools. (This work has been supported by SEMATECH)

  18. Reactive Ion Etched Unstable and Stable Semiconductor Lasers

    NASA Astrophysics Data System (ADS)

    Biellak, Stephen Alexander

    1995-01-01

    High power, diffraction-limited semiconductor laser diodes are desirable for numerous applications such as efficient solid state laser pumping, nonlinear frequency conversion, and free-space communication. In the past several years, wide-stripe diode lasers and laser arrays with powers of up to several watts have become commercially available, but the beam quality of these devices is generally poor due to filamentation, a nonlinear material effect that aberrates the output beam profile. An attractive alternative to these simple Fabry-Perot lasers is offered by unstable resonators, which have inherently large gain volumes and a cavity geometry that inhibits filamentation. Prototype unstable resonators with dry-etched cavity mirrors have recently been demonstrated to achieve near diffraction -limited operation at moderately high output powers. However, the lateral mode properties of unstable resonators have heretofore not been examined in detail, nor has a reliable, high-throughput mirror etch process been developed for these devices. In this work, we have developed a GaAs RIE etching technique using common process equipment that yields mirrors with RMS surface roughness of 3 to 5 nm. We have fabricated unstable resonators and have measured lateral M ^2 beam quality values as low as 1.25 at 300 mW single facet output power in high magnification devices. The impact of cavity geometry and processing techniques on device performance was studied, and the optimal parameters for high-brightness applications were determined. Nearly concentric stable-resonator diode lasers were also fabricated for the first time using this etching technique. These stable-resonators were observed to operate in lateral modes determined primarily by the physical resonator structure up to several times threshold, after which nonlinear effects dominated the cavity modes. Based on these measurements, a description of stable device behavior in terms of gain saturation was developed. Finally, a

  19. 21 CFR 179.43 - Carbon dioxide laser for etching food.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 3 2013-04-01 2013-04-01 false Carbon dioxide laser for etching food. 179.43... FOOD Radiation and Radiation Sources § 179.43 Carbon dioxide laser for etching food. Carbon dioxide... conditions: (a) The radiation source consists of a carbon dioxide laser designed to emit pulsed...

  20. Aluminum thin film enhanced IR nanosecond laser-induced frontside etching of transparent materials

    NASA Astrophysics Data System (ADS)

    Nieto, Daniel; Cambronero, Ferran; Flores-Arias, María Teresa; Farid, Nazar; O'Connor, Gerard M.

    2017-01-01

    Laser processing of glass is of significant commercial interest for microfabrication of precision optical engineering devices. In this work, a laser ablation enhancement mechanism for microstructuring of glass materials is presented. The method consists of depositing a thin film of aluminum on the front surface of the glass material to be etched. The laser beam modifies the glass material by being incident on this front-side. The influence of ablation fluence in the nanosecond regime, in combination with the deposition of the aluminum layer of various thicknesses, is investigated by determining the ablation threshold for different glass materials including soda-lime, borosilicate, fused silica and sapphire. Experiments are performed using single laser pulse per shot in an air environment. The best enhancement in terms of threshold fluence reduction is obtained for a 16 nm thick aluminum layer where a reduction of two orders of magnitude in the ablation threshold fluence is observed for all the glass samples investigated in this work.

  1. Influence of erbium, chromium-doped: Yttrium scandium-gallium-garnet laser etching and traditional etching systems on depth of resin penetration in enamel: A confocal laser scanning electron microscope study

    PubMed Central

    Vijayan, Vishal; Rajasigamani, K.; Karthik, K.; Maroli, Sasidharan; Chakkarayan, Jitesh; Haris, Mohamed

    2015-01-01

    Objective: This study was performed to assess the resin tag length penetration in enamel surface after bonding of brackets to identify which system was most efficient. Methodology: Our study was based on a more robust confocal microscopy for visualizing the resin tags in enamel. Totally, 100 extracted human first and second premolars have been selected for this study and were randomly divided into ten groups of 10 teeth each. In Group 1, the buccal enamel surface was etched with 37% phosphoric acid (3M ESPE), Group 2 with 37% phosphoric (Ultradent). In Groups 5, 6, and 7, erbium, chromium-doped: Yttrium scandium-gallium-garnet (Er, Cr: YSGG) laser (Biolase) was used for etching the using following specifications: Group 5 (1.5 W/20 Hz, 15 s), Group 6 (2 W/10 Hz, 15 s), and Group 7 (2 W/20 Hz, 15 s). In Groups 8, 9, and 10, Er, Cr: YSGG laser (Biolase) using same specifications and additional to this step, conventional etching on the buccal enamel surface was etched with 37% (3M ESPE) after laser etching. In Groups 1, 5, 6, 7, 8, 9, and 10 3M Unitek Transbond XT primer was mixed with Rhodamine B dye (Sigma-Aldrich, Germany) to etched surface and then cured for 20 s. In Group 2, Ultradents bonding agent was mixed with Rhodamine B. In Group 3, 3M Unitek Transbond PLUS, Monrovia, USA, which was mixed with Rhodamine B dye (Sigma-Aldrich, Germany). Group 4, with self-etching primer (Ultradent-Peak SE, USA) was mixed with Rhodamine B dye (Sigma-Aldrich, Germany). Later (3M Unitek, Transbond XT, Monrovia USA) [Figure 1] was used to bond the modified Begg brackets (T. P. Orthodontics) in Groups 1, 3, 5, 6, 7, 8, 9, and 10. In Groups 2, 4 Ultradent-Peak LC Bond was used to bond the modified brackets. After curing brackets were debonded, and enamel depth penetration was assessed using confocal laser scanning microscope. Results: Group J had a mean maximum depth of penetration of 100.876 μm, and Group D was the least having a maximum value of 44.254 μm. Conclusions: Laser

  2. High precision laser induced etching of multilayered MoS{sub 2}

    SciTech Connect

    Ko, P. J.; Thu, T. V.; Takahashi, H.; Abderrahmane, A.; Takamura, T.; Sandhu, A.

    2014-02-20

    We demonstrate a method for reducing the thickness of multilayered MoS{sub 2} to few and single layers by irradiation with a 532 nm wavelength laser spot. The morphology and optical properites of the etched MoS{sub 2} were were measured by atomic force microscopy (AFM) and Raman spectroscopy before and after laser etching. Our laser etching method is a simple and highly effective tool for the fabrication of single, and few layered MoS{sub 2} for atomic scale optical and electronic device applications.

  3. Release etch modeling analysis and the use of laser scanning microscopy for etch time prediction of micromachined structures

    NASA Astrophysics Data System (ADS)

    Matamis, George; Gogoi, Bishnu P.; Monk, David J.; McNeil, Andrew; Burrows, Veronica A.

    2000-08-01

    An alternative non-destructive analysis method using laser scanning microscopy (LSM) was used to study etch release distances in MEMS pressure sensor. The LSM method eliminates samples preparation and is easy to implement in a MEMS manufacturing environment. In this study, various diaphragm structures were etched using a highly concentrated HF based solution. Experimental etch data were obtained for both SiO2 and PSG films under these various structures. Both the height and the width of the sacrificial layer port/channel had a significant effect on etch rate for both films. As expected, a non-linear etch rate was obtained for both SiO2 and PSG films. Since the HF concentration changes over time in a manufacturing bath process, careful selection of processing time is required in order to fully release MEMS structures. Future theoretical modeling with the assistance of experimental data obtained in this study is being pursued to strengthen past work done by Eaton et al, Monk et al, and Liu et al.

  4. Laser chemical etching of waveguides and quasi-optical devices

    NASA Astrophysics Data System (ADS)

    Drouet D'Aubigny, Christian Yann Pierre

    2003-11-01

    The terahertz (THz) frequency domain, located at the frontier of radio and light, is the last unexplored region of the electromagnetic spectrum. As technology becomes available, THz systems are finding applications to fields ranging all the way from astronomical and atmospheric remote sensing to space telecommunications, medical imaging, and security. In Astronomy the THz and far infrared (IR) portion of the electromagnetic spectrum (λ = 300 to 10 μm) may hold the answers to countless questions regarding the origin and evolution of the Universe, galaxy, star and planet formation. Over the past decade, advances in telescope and detector technology have for the first time made this regime available to astronomers. Near THz frequencies, metallic hollow waveguide structures become so small, (typically much less than a millimeter), that conventional machining becomes extremely difficult, and in many cases, nearly impossible. Laser induced, micro-chemical etching is a promising new technology that can be used to fabricate three dimensional structures many millimeters across with micrometer accuracy. Laser micromachining of silicon possesses a significant edge over more conventional techniques. It does not require the use of masks and is not confined to crystal planes. A non-contact process, it eliminates tool wear and vibration problems associated with classical milling machines. At the University of Arizona we have constructed the first such laser micromachining system optimized for the fabrication of THz and far IR waveguide and quasi-optical components. The system can machine structures up to 50 mm in diameter, down to a few microns accuracy in a few minutes and with a remarkable surface finish. A variety of THz devices have been fabricated using this technique, their design, fabrication, assembly and theoretical performance is described in the chapters that follow.

  5. Silicon Nanostructures Produced by Modified MacEtch Method for Antireflective Si Surface.

    PubMed

    Nichkalo, Stepan; Druzhinin, Anatoly; Evtukh, Anatoliy; Bratus', Oleg; Steblova, Olga

    2017-12-01

    This work pertains to the method for modification of silicon (Si) wafer morphology by metal-assisted chemical etching (MacEtch) technique suitable for fabrication of antireflective Si surfaces. For this purpose, we made different Au catalyst patterns on the surface of Si substrate. This modification allowed to obtain the close-packed Au nanodrop (ND) pattern that generates the nanowires (NWs) and the well-separated Au NDs, which induce the nanopore (NP) formation. The antireflective properties of these structures in comparison with NWs produced by the conventional Ag-MacEtch method were analysed. The total surface reflectance of 1~7% for SiNWs and ~17% for SiNPs was observed over the entire Si-absorbing region. Moreover, SiNWs prepared by Au-MacEtch demonstrate better antireflective properties in contrast to those formed by conventional Ag-assisted chemical etching. So, the use of SiNWs produced by the modified Au-MacEtch method as the antireflective material is favored over those prepared by Ag-MacEtch due to their higher light absorption and lower reflectance. The possible reason of these findings is discussed.

  6. Silicon Nanostructures Produced by Modified MacEtch Method for Antireflective Si Surface

    NASA Astrophysics Data System (ADS)

    Nichkalo, Stepan; Druzhinin, Anatoly; Evtukh, Anatoliy; Bratus', Oleg; Steblova, Olga

    2017-02-01

    This work pertains to the method for modification of silicon (Si) wafer morphology by metal-assisted chemical etching (MacEtch) technique suitable for fabrication of antireflective Si surfaces. For this purpose, we made different Au catalyst patterns on the surface of Si substrate. This modification allowed to obtain the close-packed Au nanodrop (ND) pattern that generates the nanowires (NWs) and the well-separated Au NDs, which induce the nanopore (NP) formation. The antireflective properties of these structures in comparison with NWs produced by the conventional Ag-MacEtch method were analysed. The total surface reflectance of 1 7% for SiNWs and 17% for SiNPs was observed over the entire Si-absorbing region. Moreover, SiNWs prepared by Au-MacEtch demonstrate better antireflective properties in contrast to those formed by conventional Ag-assisted chemical etching. So, the use of SiNWs produced by the modified Au-MacEtch method as the antireflective material is favored over those prepared by Ag-MacEtch due to their higher light absorption and lower reflectance. The possible reason of these findings is discussed.

  7. Five-year clinical evaluation of 300 teeth restored with porcelain laminate veneers using total-etch and a modified self-etch adhesive system.

    PubMed

    Aykor, Arzu; Ozel, Emre

    2009-01-01

    This study evaluated the long-term clinical performance of porcelain laminate veneers luted with hybrid composite in combination with total-etch and self-etch adhesive systems. The study was performed on 30 patients ranging in age between 28 and 54 years. Ten veneers were performed per patient in the maxillary arch. In Group 1, 150 teeth were treated with porcelain veneers, using a total-etch adhesive system (Scotchbond Multi-Purpose Plus, 3M ESPE). In Group 2, 150 teeth were bonded with a self-etch adhesive system (AdheSE, Ivoclar-Vivadent). All the veneers were luted with a light-cured hybrid composite (Z100, 3M ESPE). The patients were recalled after 1, 2 and 5 years. Modified United States Public Health Service (USPHS) criteria were utilized to evaluate the porcelain laminate veneers in terms of marginal adaptation, cavo-surface marginal discoloration, secondary caries, postoperative sensitivity, satisfaction with restoration shade and gingival tissue response. Data were analyzed using the Chi-Square test (p < 0.05). There was no statistically significant difference between the total-etch and self-etch groups in terms of USPHS criteria (p > 0.05). Porcelain veneers exhibited successful clinical performance with both total-etch and two-step self-etch adhesives at the end of five-years.

  8. Polygonal pits on silicon surfaces that are created by laser-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Saito, Mitsunori; Kimura, Saori

    2017-02-01

    Laser-assisted chemical etching was conducted for creating periodic textures on silicon surfaces. Silicon plates with the (111) surface orientation were immersed in an aqueous solution of potassium hydroxide, and a pulsed laser beam (532 nm wavelength, 5 ns duration, 10 pulse/s) was irradiated on their surface to promote anisotropic etching. The laser beam was patterned by using a glass capillary plate that contained a hexagonal array of micropores (10 μ m diameter, 12 m period). The focused beam projected the hexagonal image on the silicon surface, creating bright spots of 4 μ m period. During the laser irradiation process of 3 min, both laser-induced ablation and chemical etching took place at these bright spots. After stop of laser irradiation, the chemical etching progressed further, and consequently, a periodic array of triangular or hexagonal pits emerged on the silicon surface. The direction of the triangular pits changed by rotation of the silicon plate. When a silicon plate with the (100) surface orientation was used, diamond or rectangular pits were created on its surface. The mechanism of this polygonal texturing was explained by using the normal and intersecting vectors of the (100), (110), and (111) planes that exhibited different etching rates.

  9. Evaluation of shear bond strength of orthodontic brackets bonded with Er-YAG laser etching

    PubMed Central

    Raji, S. Hamid; Birang, Reza; Majdzade, Fateme; Ghorbanipour, Reza

    2012-01-01

    Background: Based on contradictory findings concerning the use of lasers for enamel etching, the purpose of this study was to investigate the shear bond strength of teeth prepared for bonding with Er-YAG laser etching and compare them with phosphoric acid etching. Materials and Methods: In this in vitro study forty – eight premolars, extracted for orthodontic purposes were randomly divided in to three groups. Thirty-two teeth were exposed to laser energy for 25 s: 16 teeth at 100 mj setting and 16 teeth at 150 mj setting. Sixteen teeth were etched with 37% phosphoric acid. The shear bond strength of bonded brackets with the Transbond XT adhesive system was measured with the Zwick testing machine. Descriptive statistics, Kolmogorov–Smirnov test, of homogeneity of variances, one- way analysis of variances and Tukey's test and Kruskal Wallis were used to analyze the data. Results: The mean shear bond strength of the teeth lased with 150 mj was 12.26 ± 4.76 MPa, which was not significantly different from the group with acid etching (15.26 ± 4.16 MPa). Irradiation with 100 mj resulted in mean bond strengths of 9.05 ± 3.16 MPa, which was significantly different from that of acid etching (P < 0.001). Conclusions: laser etching at 150 and 100 mj was adequate for bond strength but the failure pattern of brackets bonded with laser etching is dominantly at adhesive – enamel interface and is not safe for enamel during debonding. PMID:23087733

  10. The research on mechanical effect etching Si in pulsed laser micromaching under water

    NASA Astrophysics Data System (ADS)

    Yuhong, Long; Liangcai, Xiong; Tielin, Shi

    2011-02-01

    To explore further the influencing of mechanical effects on laser machining in the liquid, in the process of great-energy and short-pulsed laser irradiating matter in the liquid, the experiments of 248 nm laser etching n-Si under water were carried out. The removal mechanism of brittle material etched by mechanical effects, which is induced during high-energy and short-pulsed laser machining in the liquid, was discussed. In the paper, the approximate mechanics model of indentation fracture was used to analyze the mechanical effects for removing brittle materials of silicon when laser machining in the liquid. Based on this, a theoretical model of material removal rate was proposed; the experiment of laser machining under water was adopted to validate the model. The experimental results indicate that the removal rate of brittle material caused by shock forces is relatively great.

  11. Selforganized Structure Formation in Organized Microstructuring by Laser-Jet Etching

    NASA Astrophysics Data System (ADS)

    Rabbow, T. J.; Plath, P. J.; Mora, A.; Haase, M.

    Laser-jet induced wet etching of stainless steel in 5M H3PO4 has been investigated. By this method, it is possible to cut and microstructure metals and alloys that form passive layers in strong etchants. Due to the laser heating of the metal and the adjacent layers of the etchant, the passive layer is removed and an active dissolution of the base metal together with the formation of hydrogen is observed. The reactions are limited by the transport of fresh acid and the removal of dissolved metal. A jet of etchant reduces the transport limitations. For definite ranges of the laser power, the feed velocity and the etchant jet velocity, a regime of periodic structure formation of the kerf, often called ripples, has been found. The ripple length depends on all three parameters. The ripple formation can be brought into correlation with a periodic change of the intensity of the reflected light as well as oscillations of the potential workpiece. It could be shown that the periodic structure formation is connected to a spreading of an etching front from the laser activated area, that temporarily moves ahead to the laser. This leads to modulations of the interface for the laser absorption, which results, for example, in oscillations of the intensity of the reflected light. This means the laser induced etching reaction attracts a feedback based on the conditions of absorption for the laser. For those parameters of feed velocity, laser power and etchant jet velocity, without ripple formation the laser induced etching front is of a constant distance to the laser which results in steady conditions at the interface for the absorption of the laser.

  12. Comparison of shear bond strength of reattached incisor fragment using Er,Cr:YSGG laser etching and conventional acid etching: An in vitro study

    PubMed Central

    Kumar, Gyanendra; Goswami, Mridula; Dhillon, Jatinder Kaur

    2016-01-01

    Aim: The aim of this invitro study is to evaluate the shear bond strength of reattached fractured incisor fragments using Er,Cr:YSGG laser and conventional acid etching without additional tooth preparation. Materials and methods: Forty extracted human teeth were divided in two groups of 20 each (Groups A and B). In Group A, fractured surface was treated by an Er, Cr: YSGG laser system (Waterlase MD, Biolase Technology Inc., San Clemente, CA, USA) operating at a wavelength of 2,780 nm and frequency of 20 Hz. In Group B, fractured surface was etched using 37% phosphoric acid (Scotchbond, 3M). In both the groups, further subdivision with 10 sample each was made based on horizontal and oblique fracture. After laser or acid etching, all the samples were reattached using flowable composite resin and light cured. The samples were tested for shear bond strength. Results: Mean shear bond strength for Group A (94.70±39.158) was lower as compared to Group B (121.25±49.937), although the difference was not statistically significant(p value=0.121). Similarly no statistical significant difference was observed amongst the subgroups. (p>0.05) Conclusion: Er,Cr:YSGG laser etching in reattachment of fractured incisor fragment is a good alternative to conventional acid etching. Er,Cr:YSGG showed comparable efficiency in rebonding of fractured teeth fragment as acid etching. PMID:27721563

  13. Laser surface pretreatment of 100Cr6 bearing steel - Hardening effects and white etching zones

    NASA Astrophysics Data System (ADS)

    Buling, Anna; Sändker, Hendrik; Stollenwerk, Jochen; Krupp, Ulrich; Hamann-Steinmeier, Angela

    2016-08-01

    In order to achieve a surface pretreatment of the bearing steel 100Cr6 (1-1.5 wt.% Cr) a laser-based process was used. The obtained modification may result in an optimization of the adhesive properties of the surface with respect to an anticorrosion polymer coating on the basis of PEEK (poly-ether-ether-ketone), which is applied on the steel surface by a laser melting technique. This work deals with the influence of the laser-based pretreatment regarding the surface microstructure and the micro-hardness of the steel, which has been examined by scanning electron microscopy (SEM), light microscopy and automated micro-hardness testing. The most suitable parameter set for the laser-based pretreatment leads to the formation of very hard white etching zones (WEZ) with a thickness of 23 μm, whereas this pretreatment also induces topographical changes. The occurrence of the white etching zones is attributed to near-surface re-austenitization and rapid quenching. Moreover, dark etching zones (DEZ) with a thickness of 32 μm are found at the laser path edges as well as underneath the white etching zones (WEZ). In these areas, the hardness is decreased due to the formation of oxides as a consequence of re-tempering.

  14. Production of submicrometre fused silica gratings using laser-induced backside dry etching technique

    NASA Astrophysics Data System (ADS)

    Hopp, B.; Vass, Cs; Smausz, T.; Bor, Zs

    2006-11-01

    Laser micromachining of transparent materials is a promising technique for producing micro-optical elements. Several types of both direct (e.g. ablation) and indirect (e.g. laser-induced backside wet etching: LIBWE) procedures have already been developed and presented in the last two decades. Here we present a new method (laser-induced backside dry etching (LIBDE)) in the analogy of LIBWE for the micro and nanoprocessing of transparent materials. In our experiments 1 mm thick fused silica plates were used as transparent work pieces. The plates were covered with 100 nm thick silver layers. The metal absorbing films were irradiated through the fused silica by a KrF excimer laser beam (λ = 248 nm, FWHM = 30 ns). The illuminated area was 1.05 mm2 and the fluence on the silver-quartz interface varied in the range 0-1800 mJ cm-2. We have provided evidence that LIBDE is more effective and simple than LIBWE, its etch rate being much higher at a given laser fluence. Our interference experiments proved that the LIBDE etching technique is suitable to fabricate gratings displaying submicrometre periods in transparent materials. On the basis of all these, it is suggested that this method may be useful to produce other nano and microoptical elements, too.

  15. Influence of laser etching on enamel and dentin bond strength of Silorane System Adhesive.

    PubMed

    Ustunkol, Ildem; Yazici, A Ruya; Gorucu, Jale; Dayangac, Berrin

    2015-02-01

    The aim of this in vitro study was to evaluate the shear bond strength (SBS) of Silorane System Adhesive to enamel and dentin surfaces that had been etched with different procedures. Ninety freshly extracted human third molars were used for the study. After the teeth were embedded with buccal surfaces facing up, they were randomly divided into two groups. In group I, specimens were polished with a 600-grit silicon carbide (SiC) paper to obtain flat exposed enamel. In group II, the overlying enamel layer was removed and exposed dentin surfaces were polished with a 600-grit SiC paper. Then, the teeth in each group were randomly divided into three subgroups according to etching procedures: etched with erbium, chromium:yttrium-scandium-gallium-garnet laser (a), etched with 35% phosphoric acid (b), and non-etched (c, control). Silorane System Adhesive was used to bond silorane restorative to both enamel and dentin. After 24-h storage in distilled water at room temperature, a SBS test was performed using a universal testing machine at a crosshead speed of 1 mm/min. The data were analyzed using two-way ANOVA and Bonferroni tests (p < 0.05). The highest SBS was found after additional phosphoric acid treatment in dentin groups (p < 0.05). There were no statistically significant differences between the laser-etched and non-etched groups in enamel and dentin (p > 0.05). The SBS of self-etch adhesive to dentin was not statistically different from enamel (p > 0.05). Phosphoric acid treatment seems the most promising surface treatment for increasing the enamel and dentin bond strength of Silorane System Adhesive.

  16. [INVITED] On the mechanisms of single-pulse laser-induced backside wet etching

    NASA Astrophysics Data System (ADS)

    Tsvetkov, M. Yu.; Yusupov, V. I.; Minaev, N. V.; Akovantseva, A. A.; Timashev, P. S.; Golant, K. M.; Chichkov, B. N.; Bagratashvili, V. N.

    2017-02-01

    Laser-induced backside wet etching (LIBWE) of a silicate glass surface at interface with a strongly absorbing aqueous dye solution is studied. The process of crater formation and the generated optoacoustic signals under the action of single 5 ns laser pulses at the wavelength of 527 nm are investigated. The single-pulse mode is used to avoid effects of incubation and saturation of the etched depth. Significant differences in the mechanisms of crater formation in the "soft" mode of laser action (at laser fluencies smaller than 150-170 J/cm2) and in the "hard" mode (at higher laser fluencies) are observed. In the "soft" single-pulse mode, LIBWE produces accurate craters with the depth of several hundred nanometers, good shape reproducibility and smooth walls. Estimates of temperature and pressure of the dye solution heated by a single laser pulse indicate that these parameters can significantly exceed the corresponding critical values for water. We consider that chemical etching of glass surface (or molten glass) by supercritical water, produced by laser heating of the aqueous dye solution, is the dominant mechanism responsible for the formation of crater in the "soft" mode. In the "hard" mode, the produced craters have ragged shape and poor pulse-to-pulse reproducibility. Outside the laser exposed area, cracks and splits are formed, which provide evidence for the shock induced glass fracture. By measuring the amplitude and spectrum of the generated optoacoustic signals it is possible to conclude that in the "hard" mode of laser action, intense hydrodynamic processes induced by the formation and cavitation collapse of vapor-gas bubbles at solid-liquid interface are leading to the mechanical fracture of glass. The LIBWE material processing in the "soft" mode, based on chemical etching in supercritical fluids (in particular, supercritical water) is very promising for structuring of optical materials.

  17. HF-based etching processes for improving laser damage resistance of fused silica optical surfaces

    SciTech Connect

    Suratwala, T I; Miller, P E; Bude, J D; Steele, R A; Shen, N; Monticelli, M V; Feit, M D; Laurence, T A; Norton, M A; Carr, C W; Wong, L L

    2010-02-23

    The effect of various HF-based etching processes on the laser damage resistance of scratched fused silica surfaces has been investigated. Conventionally polished and subsequently scratched fused silica plates were treated by submerging in various HF-based etchants (HF or NH{sub 4}F:HF at various ratios and concentrations) under different process conditions (e.g., agitation frequencies, etch times, rinse conditions, and environmental cleanliness). Subsequently, the laser damage resistance (at 351 or 355 nm) of the treated surface was measured. The laser damage resistance was found to be strongly process dependent and scaled inversely with scratch width. The etching process was optimized to remove or prevent the presence of identified precursors (chemical impurities, fracture surfaces, and silica-based redeposit) known to lead to laser damage initiation. The redeposit precursor was reduced (and hence the damage threshold was increased) by: (1) increasing the SiF{sub 6}{sup 2-} solubility through reduction in the NH4F concentration and impurity cation impurities, and (2) improving the mass transport of reaction product (SiF{sub 6}{sup 2-}) (using high frequency ultrasonic agitation and excessive spray rinsing) away from the etched surface. A 2D finite element crack-etching and rinsing mass transport model (incorporating diffusion and advection) was used to predict reaction product concentration. The predictions are consistent with the experimentally observed process trends. The laser damage thresholds also increased with etched amount (up to {approx}30 {micro}m), which has been attributed to: (1) etching through lateral cracks where there is poor acid penetration, and (2) increasing the crack opening resulting in increased mass transport rates. With the optimized etch process, laser damage resistance increased dramatically; the average threshold fluence for damage initiation for 30 {micro}m wide scratches increased from 7 to 41 J/cm{sup 2}, and the statistical

  18. Self-organization of hydrogen gas bubbles rising above laser-etched metallic aluminum in a weakly basic aqueous solution.

    PubMed

    Barmina, E V; Kuzmin, P G; Shafeev, G A

    2011-10-01

    Self-organization of hydrogen bubbles is reported under etching of metallic Aluminum in a weakly basic solution. The ascending gas bubbles drift to the areas with higher density of bubbles. As a result, ascending bubbles form various stationary structures whose symmetry is determined by the symmetry of the etched area. Bubbles are aligned along the bisectors of the contour of the etched area. The special laser-assisted profiling of the etched area in shape of a vortex induces a torque in the fluid above the etched area. The process is interpreted on the basis of Bernoulli equation.

  19. Optically transparent glass micro-actuator fabricated by femtosecond laser exposure and chemical etching

    NASA Astrophysics Data System (ADS)

    Lenssen, Bo; Bellouard, Yves

    2012-09-01

    Femtosecond laser manufacturing combined with chemical etching has recently emerged as a flexible platform for fabricating three-dimensional devices and integrated optical elements in glass substrates. Here, we demonstrate an optically transparent micro-actuator fabricated out of a single piece of fused silica. This work paves the road for further functional integration in glass substrate and optically transparent microsystems.

  20. Silicon microstructure fabricated by laser micro-patterning method combined with wet etching process

    NASA Astrophysics Data System (ADS)

    Oishi, T.; Goto, M.; Pihosh, Y.; Kasahara, A.; Tosa, M.

    2005-02-01

    A simple method for silicon microfabrication has been successfully developed. Polypropylene (PP) film as a resist was prepared on a surface of silicon (Si) (1 0 0) plate by an rf magnetron sputtering method. A pulsed laser light was focused and irradiated to the PP film and a part of the film was removed by laser ablation process in the spot at certain laser intensity. When the sample was immersed in a potassium hydroxide solution, etching occurred only at the part that the PP film was removed by laser ablation. These results raise the possibility of this method as a process for Si microfabrication.

  1. Bond strength of composite to dentin: effect of acid etching and laser irradiation through an uncured self-etch adhesive system

    NASA Astrophysics Data System (ADS)

    Castro, F. L. A.; Carvalho, J. G.; Andrade, M. F.; Saad, J. R. C.; Hebling, J.; Lizarelli, R. F. Z.

    2014-08-01

    This study evaluated the effect on micro-tensile bond strength (µ-TBS) of laser irradiation of etched/unetched dentin through an uncured self-etching adhesive. Dentinal surfaces were treated with Clearfil SE Bond Adhesive (CSE) either according to the manufacturer’s instructions (CSE) or without applying the primer (CSE/NP). The dentin was irradiated through the uncured adhesive, using an Nd:YAG laser at 0.75 or 1 W power settings. The adhesive was cured, composite crowns were built up, and the teeth were sectioned into beams (0.49 mm2) to be stressed under tension. Data were analyzed using one-way ANOVA and Tukey statistics (α = 5%). Dentin of the fractured specimens and the interfaces of untested beams were observed under scanning electron microscopy (SEM). The results showed that non-etched irradiated surfaces presented higher µ-TBS than etched and irradiated surfaces (p < 0.05). Laser irradiation alone did not lead to differences in µ-TBS (p > 0.05). SEM showed solidification globules on the surfaces of the specimens. The interfaces were similar on irradiated and non-irradiated surfaces. Laser irradiation of dentin through the uncured adhesive did not lead to higher µ-TBS when compared to the suggested manufacturer’s technique. However, this treatment brought benefits when performed on unetched dentin, since bond strengths were higher when compared to etched dentin.

  2. Modified Fabrication for InGaAsP Strip Laser

    NASA Technical Reports Server (NTRS)

    Ladany, I.; Furman, T. R.

    1984-01-01

    Improved fabrication of InGaAsP stripe lasers involves replacement of oxide stripe in quaternary laser by an n-type layer of InP grown on top of quaternary cap layer. Process allows use of stop etch that selectively removes InP and does not etch InGaAsP, making fabrication especially convenient.

  3. Fabrication of 3D solenoid microcoils in silica glass by femtosecond laser wet etch and microsolidics

    NASA Astrophysics Data System (ADS)

    Meng, Xiangwei; Yang, Qing; Chen, Feng; Shan, Chao; Liu, Keyin; Li, Yanyang; Bian, Hao; Du, Guangqing; Hou, Xun

    2015-02-01

    This paper reports a flexible fabrication method for 3D solenoid microcoils in silica glass. The method consists of femtosecond laser wet etching (FLWE) and microsolidics process. The 3D microchannel with high aspect ratio is fabricated by an improved FLWE method. In the microsolidics process, an alloy was chosen as the conductive metal. The microwires are achieved by injecting liquid alloy into the microchannel, and allowing the alloy to cool and solidify. The alloy microwires with high melting point can overcome the limitation of working temperature and improve the electrical property. The geometry, the height and diameter of microcoils were flexibly fabricated by the pre-designed laser writing path, the laser power and etching time. The 3D microcoils can provide uniform magnetic field and be widely integrated in many magnetic microsystems.

  4. Endpoint in plasma etch process using new modified w-multivariate charts and windowed regression

    NASA Astrophysics Data System (ADS)

    Zakour, Sihem Ben; Taleb, Hassen

    2017-02-01

    Endpoint detection is very important undertaking on the side of getting a good understanding and figuring out if a plasma etching process is done in the right way, especially if the etched area is very small (0.1%). It truly is a crucial part of supplying repeatable effects in every single wafer. When the film being etched has been completely cleared, the endpoint is reached. To ensure the desired device performance on the produced integrated circuit, the high optical emission spectroscopy (OES) sensor is employed. The huge number of gathered wavelengths (profiles) is then analyzed and pre-processed using a new proposed simple algorithm named Spectra peak selection (SPS) to select the important wavelengths, then we employ wavelet analysis (WA) to enhance the performance of detection by suppressing noise and redundant information. The selected and treated OES wavelengths are then used in modified multivariate control charts (MEWMA and Hotelling) for three statistics (mean, SD and CV) and windowed polynomial regression for mean. The employ of three aforementioned statistics is motivated by controlling mean shift, variance shift and their ratio (CV) if both mean and SD are not stable. The control charts show their performance in detecting endpoint especially W-mean Hotelling chart and the worst result is given by CV statistic. As the best detection of endpoint is given by the W-Hotelling mean statistic, this statistic will be used to construct a windowed wavelet Hotelling polynomial regression. This latter can only identify the window containing endpoint phenomenon.

  5. Effects of thermo-plasmonics on laser-induced backside wet etching of silicate glass

    NASA Astrophysics Data System (ADS)

    Tsvetkov, M. Yu; Yusupov, V. I.; Minaev, N. V.; Timashev, P. S.; Golant, K. M.; Bagratashvili, V. N.

    2016-10-01

    The thermo-plasmonic effect (heat deposition via absorption of laser light by metal nanoparticles) is applied to substantially enhance the effectiveness and controllability of the microstructure formation by laser-induced backside wet etching (LIBWE). Experiments were carried out with silicate glass plates using a pulsed 527 nm wavelength laser and an aqueous solution of AgNO3 as a precursor of the Ag nanoparticles. Mechanisms of such thermo-plasmonic LIBWE (TP-LIBWE) versions are considered. They involve: laser-induced photo-thermal reducing of silver (Ag) and self-assembling of Ag nanoparticles in water and the water/glass interface; fast laser-induced overheating of a water and glass surface through the thermo-plasmonic effect; formation of highly reactive supercritical water that causes glass etching and crater formation; generation of steam-gas bubbles in a liquid. It is significant that the emergence of the Marangoni convection results in bubble retention in the focal point at the interface and the accumulation of nanoparticles on the surface of the laser-induced crater, as this facilitates the movement of the bubbles with captured Ag particles from the fluid volume in the crater region, and accelerates the formation of the area of strong ‘surface absorption’ of laser energy. All these mechanisms provide a highly efficient and reproducible process for laser microstructure formation on the surface of glass using a novel TP-LIBWE technique.

  6. Retention of Proteins and Metalloproteins in Open Tubular Capillary Electrochromatography with Etched Chemically Modified Columns

    PubMed Central

    Pesek, Joseph J.; Matyska, Maria T.; Salgotra, Vasudha

    2010-01-01

    Etched chemically modified capillaries with two different bonded groups (pentyl and octadecyl) are compared for their migration behavior of several common proteins and metalloproteins as well as metalloproteinases. Migration times, efficiency and peak shape are evaluated over the pH range of 2.1 to 8.1 to determine any effects of the bonded group on the electrochromatographic behavior of these compounds. One goal was to determine if the relative hydrophobicity of the stationary phase has a significant effect on proteins in the open tubular format of capillary electrochromatography as it does in HPLC. Reproducibility of the migration times is also investigated. PMID:18850653

  7. Sub-surface channels in sapphire made by ultraviolet picosecond laser irradiation and selective etching.

    PubMed

    Moser, Rüdiger; Ojha, Nirdesh; Kunzer, Michael; Schwarz, Ulrich T

    2011-11-21

    We demonstrate the realization of sub-surface channels in sapphire prepared by ultraviolet picosecond laser irradiation and subsequent selective wet etching. By optimizing the pulse energy and the separation between individual laser pulses, an optimization of channel length can be achieved with an aspect ratio as high as 3200. Due to strong variation in channel length, further investigation was done to improve the reproducibility. By multiple irradiations the standard deviation of the channel length could be reduced to 2.2%. The achieved channel length together with the high reproducibility and the use of a commercial picosecond laser system makes the process attractive for industrial application.

  8. Effects of chemical etching on the surface quality and the laser induced damage threshold of fused silica optics

    NASA Astrophysics Data System (ADS)

    Pfiffer, Mathilde; Cormont, Philippe; Néauport, Jérôme; Lambert, Sébastien; Fargin, Evelyne; Bousquet, Bruno; Dussauze, Marc

    2016-12-01

    Effects of deep wet etching on the surface quality and the laser induced damage probability have been studied on fused silica samples. Results obtained with a HF/HNO3 solution and a KOH solution were compared on both polished pristine surface and scratched surfaces. The hydrofluoric solution radically deteriorated the surface quality creating a haze on the whole surface and increasing considerably the roughness. For both solutions, neither improvement nor deterioration of the laser damage performances has been observed on the etched surfaces while the laser damage resistance of scratches has been increased to the level of the surface. We conclude that laser damage performances are equivalent with both solutions but an acid etching induces surface degradation that is not experienced with basic etching.

  9. Laser-induced local CVD and simultaneous etching of tungsten

    NASA Astrophysics Data System (ADS)

    Tóth, Z.; Piglmayer, K.

    2002-01-01

    Tungsten dots are grown by laser-assisted chemical vapour deposition from a gas mixture of tungsten hexafluoride and hydrogen on a supported thin tungsten film. Local growth is achieved by confined heating of the substrate using the focused beam of a cw Ar + laser. By in situ monitoring the lateral growth of the dots with the help of a microscope-video system, real-time data of the lateral growth have been recorded from single experiments in order to study the kinetics of the process. The competing kinetics of different reaction paths, controlled by the ratio of the precursor gases, investigated. It leads to a change of the apparent activation energy and the morphology.

  10. Structuring of glass fibre surfaces by laser-induced front side etching

    NASA Astrophysics Data System (ADS)

    Lorenz, Pierre; Ehrhardt, Martin; Zimmer, Klaus

    2014-05-01

    The fabrication of sub-μm structures on glass fibre surfaces poses a big challenge for the laser processing. However, the laser-induced front side etching (LIFE) method has a great potential for the fast, nm-precision, and cost-effective production of surface structures. LIFE is a method for laser etching of transparent materials using thin absorber layers with a high absorption coefficient like metal layers. The LIFE process of the front surface of a fused silica wafer as well as of a glass fibre is studied in dependence on the laser parameters. A KrF excimer laser with a wavelength of 248 nm and a pulse duration of 25 ns was used. The resultant structures were analysed with microscopic methods (white light interferometry, scanning electron microscopy (SEM)). The analysing of the surface structures presented that the LIFE methods allow the fabrication of well-defined periodic sub-μm structures. Furthermore, the structuring process was simulated by a thermodynamic equation including an approach of the laser-plasma interaction. The theoretically predicted results presented a good agreement with the experimental results.

  11. Etching process for improving the strength of a laser-machined silicon-based ceramic article

    DOEpatents

    Copley, S.M.; Tao, H.; Todd-Copley, J.A.

    1991-06-11

    A process is disclosed for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength. 1 figure.

  12. Etching process for improving the strength of a laser-machined silicon-based ceramic article

    DOEpatents

    Copley, Stephen M.; Tao, Hongyi; Todd-Copley, Judith A.

    1991-01-01

    A process for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength.

  13. Optical monitoring of surface adlayers by laser-induced thermal desorption during the plasma etching of semiconductors

    NASA Astrophysics Data System (ADS)

    Choe, Jae Young

    1999-11-01

    Laser induced thermal desorption with optical detection by laser induced fluorescence and transient plasma induced emission is used to analyze the surface adlayer during plasma etching of semiconductors, including Si, Ge, and InP. In the investigation of Si etching in a Cl2 inductively coupled plasma (ICP), 308 nm radiation from a XeCl excimer laser heats the surface to desorb the surface species (LD) and excites laser induced fluorescence (LIF) in the desorbing SiCl. This measured LD-LIF optical signal indicates the adlayer chlorine content during steady-state plasma etching. The LD-LIF of SiCl increases with dc substrate bias voltage indicating that the adlayer chlorine content increases with increasing substrate bias. The SiCl LD-LIF signal is almost independent of rf power, while the ion density and etch rate increase by an order of magnitude over the range of rf power studied. In the investigation of Ge etching in a Cl2 ICP, 308 nm radiation from a XeCl excimer laser is used for LD-LIF of GeCl. The LD-LIF of GeCl is also independent of rf power, as for Si etching, but the rate of chlorination is faster than that during Si etching. The GeCl LD-LIF signal remains almost constant as dc substrate bias is increased from 0 V to over -100 V. The transient increase in plasma-induced emission following laser-induced thermal desorption (LD-PIE) is also used to analyze the surface adlayer during Si and InP etching by a Cl2 plasma. Several different species are monitored during Si etching by a Cl2 plasma, including Si, SiCl and SiCl2. The LD-PIE intensities from all of these species increase with rf power. In order to properly interpret the LD-PIE signal to determine the level of surface chlorination, the LD-PIE signal is normalized by the electron density. The LD-PIE intensities during Si etching increase with the dc substrate bias as in the LD-LIF study. Both the LD-LIF and LD-PIE measurements of Si etching are consistent with each other for determining the adlayer

  14. Effects of laser and acid etching and air abrasion on mineral content of dentin.

    PubMed

    Malkoc, Meral Arslan; Taşdemir, Serife Tuba; Ozturk, A Nilgun; Ozturk, Bora; Berk, Gizem

    2011-01-01

    The aim of this study was to evaluate the mineral content of dentin prepared using an Er,Cr:YSGG laser at four different power settings, acid etching, and air abrasion. The study teeth comprised 35 molars which were randomly divided into seven equal groups. The occlusal third of the crowns were cut with a slow-speed diamond saw. The groups were as follows: group A, control group; group B, dentin etched with 35% buffered phosphoric acid for 30 s; group C, dentin abraded at 60 psi with 50-µm aluminium oxide for 1 s; groups D-G, dentin irradiated with the Er,Cr:YSGG laser at 1.50 W (group D), 2.25 W (group E), 3.00 W (group F), and 3.50 W (group G). The levels of Mg, P, Ca, K and Na in each dentin slab were measured by inductively coupled plasma-atomic emission spectrometry (ICP-AES). Data were analysed by one way analysis of variance and Tukey HSD tests. There were no significant differences between the groups in the levels of Ca, P and Na, and the Ca/P ratio (p>0.05); however, there were significant differences in the levels of K (p<0.001) and Mg (p=0.13). In addition, the levels of Mg in the air abrasion group were higher than in the other groups (p<0.01). Etching with the Er,Cr:YSGG laser system, air abrasion and acid etching did not affect the levels of Ca, P and Na, or the Ca/P ratio, in the dentin surface.

  15. Shear Bond Strength of an Etch-and-rinse Adhesive to Er:YAG Laser- and/or Phosphoric Acid-treated Dentin

    PubMed Central

    Davari, Abdolrahim; Sadeghi, Mostafa; Bakhshi, Hamid

    2013-01-01

    Background and aims. Er:YAG laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. The aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following Er:YAG laser and/or phosphoric acid etching. Materials and methods. The roots of 75 sound maxillary premolars were sectioned below the CEJ and the crowns were embedded in auto-polymerizing acrylic resin with the buccal surfaces facing up. The buccal surfaces were ground using a diamond bur and polished until the dentin was exposed; the samples were randomly divided into five groups (n=15) according to the surface treatment: (1) acid etching; (2) laser etching; (3) laser etching followed by acid etching; (4) acid etching followed by laser etching and (5) no acid etching and no laser etching (control group). Composite resin rods (Point 4, Kerr Co) were bonded to treated dentin surfaces with an etch-and-rise adhesive system (Optibond FL, Kerr Co) and light-cured.After storage for two weeks at 37°C and 100% humidity and then thermocycling, bond strength was measured with a Zwick Universal Testing Machine at a crosshead speed of 1 mm/min. Data was analyzed using parametric and non-parametric tests (P<0.05). Results. Mean shear bond strength for acid etching (20.1±1.8 MPa) and acid+laser (15.6±3.5 MPa) groups were significantly higher than those for laser+acid (15.6±3.5 MPa), laser etching (14.1±3.4 MPa) and control (8.1±2.1 MPa) groups. However, there were no significant differences between acid etching and acid+laser groups, and between laser+acid and laser groups. Conclusion. When the cavity is prepared by bur, it is not necessary to etch the dentin surface by Er:YAG laser following acid etching and acid etching after laser etching. PMID:23875083

  16. Micro-fabricated packed gas chromatography column based on laser etching technology.

    PubMed

    Sun, J H; Guan, F Y; Zhu, X F; Ning, Z W; Ma, T J; Liu, J H; Deng, T

    2016-01-15

    In this work, a micro packed gas chromatograph column integrated with a micro heater was fabricated by using laser etching technology (LET) for analyzing environmental gases. LET is a powerful tool to etch deep well-shaped channels on the glass wafer, and it is the most effective way to increase depth of channels. The fabricated packed GC column with a length of over 1.6m, to our best knowledge, which is the longest so far. In addition, the fabricated column with a rectangular cross section of 1.2mm (depth) × 0.6mm (width) has a large aspect ratio of 2:1. The results show that the fabricated packed column had a large sample capacity, achieved a separation efficiency of about 5800 plates/m and eluted highly symmetrical Gaussian peaks.

  17. Improvement of enamel bond strengths for conventional and resin-modified glass ionomers: acid-etching vs. conditioning*

    PubMed Central

    Zhang, Ling; Tang, Tian; Zhang, Zhen-liang; Liang, Bing; Wang, Xiao-miao; Fu, Bai-ping

    2013-01-01

    Objective: This study deals with the effect of phosphoric acid etching and conditioning on enamel micro-tensile bond strengths (μTBSs) of conventional and resin-modified glass ionomer cements (GICs/RMGICs). Methods: Forty-eight bovine incisors were prepared into rectangular blocks. Highly-polished labial enamel surfaces were either acid-etched, conditioned with liquids of cements, or not further treated (control). Subsequently, two matching pre-treated enamel surfaces were cemented together with one of four cements [two GICs: Fuji I (GC), Ketac Cem Easymix (3M ESPE); two RMGICs: Fuji Plus (GC), RelyX Luting (3M ESPE)] in preparation for μTBS tests. Pre-treated enamel surfaces and cement-enamel interfaces were analyzed by scanning electron microscopy (SEM). Results: Phosphoric acid etching significantly increased the enamel μTBS of GICs/RMGICs. Conditioning with the liquids of the cements produced significantly weaker or equivalent enamel μTBS compared to the control. Regardless of etching, RMGICs yielded stronger enamel μTBS than GICs. A visible hybrid layer was found at certain enamel-cement interfaces of the etched enamels. Conclusions: Phosphoric acid etching significantly increased the enamel μTBSs of GICs/RMGICs. Phosphoric acid etching should be recommended to etch the enamel margins before the cementation of the prostheses such as inlays and onlays, using GICs/RMGICs to improve the bond strengths. RMGICs provided stronger enamel bond strength than GICs and conditioning did not increase enamel bond strength. PMID:24190447

  18. Self-etch bonding agent beneath sealant: Bond strength for laser-irradiated enamel

    PubMed Central

    Borsatto, Maria Cristina; Giuntini, Jackelline de Lemes; Contente, Marta Maria Martins Giamatei; Gomes-Silva, Jaciara Miranda; Torres, Carolina Paes; Galo, Rodrigo

    2013-01-01

    Objectives: This study evaluated the in vitro shear bond strength (SBS) of a resin-based pit-and-fissure sealant (Fluroshield [F], Dentsply/Caulk) associated with either an etch-and-rinse (Adper Single Bond 2 [SB], 3M/ESPE) or a two-step self-etch adhesive system (Adper SE Plus [SE], 3M/ESPE) on Er: YAG laser-irradiated enamel. Materials and Methods: Seventeen sound third molar crowns were embedded in acrylic resin, and the mesial–distal enamel surfaces were flattened. The enamel sites were irradiated with a 2.94-μm wavelength Er: YAG laser (120 mJ, 4 Hz, noncontact mode/17 mm, 20 s). The specimens were randomly assigned to three groups according to the bonding technique: I - 37% phosphoric acid etching + SB + F; II - SE + F and III - F applied to acid-etched enamel, without an intermediate layer of bonding agent. In all of the groups, a 3-mm diameter enamel-bonding site was demarcated and the sealant cylinders were bonded. After 24 hours in distilled water, the shear bond strength was tested at a crosshead speed of 0.5 mm/minute. The data were analyzed by one-way ANOVA and Tukey's test. The debonded specimens were examined with a stereomicroscope to assess the failure modes. Results: The mean SBS values in MPa were I = 6.39 (±1.44); II = 9.50 (±2.79); and III = 5.26 (±1.82). No statistically significant differences were observed between groups I and III; SE/F presented a significantly higher SBS than that of the other groups (P = 0.001). With regard to the failure mode, groups I (65%) and II (75%) presented adhesive failures, while group III showed 50% adhesive failure. Cohesive failure did not occur. Conclusion: The application of the two-step self-etch bonding agent (Adper SE Plus) beneath the resin pit-and-fissure sealant placement resulted in a significantly higher bond strength for the Er:YAG laser-irradiated enamel. PMID:24926208

  19. Large scale, highly dense nanoholes on metal surfaces by underwater laser assisted hydrogen etching near nanocrystalline boundary

    NASA Astrophysics Data System (ADS)

    Lin, Dong; Zhang, Martin Yi; Ye, Chang; Liu, Zhikun; Liu, C. Richard; Cheng, Gary J.

    2012-03-01

    A new method to generate large scale and highly dense nanoholes is presented in this paper. By the pulsed laser irradiation under water, the hydrogen etching is introduced to form high density nanoholes on the surfaces of AISI 4140 steel and Ti. In order to achieve higher nanohole density, laser shock peening (LSP) followed by recrystallization is used for grain refinement. It is found that the nanohole density does not increase until recrystallization of the substructures after laser shock peening. The mechanism of nanohole generation is studied in detail. This method can be also applied to generate nanoholes on other materials with hydrogen etching effect.

  20. Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN

    NASA Astrophysics Data System (ADS)

    Kuritzky, L. Y.; Becerra, D. L.; Saud Abbas, A.; Nedy, J.; Nakamura, S.; DenBaars, S. P.; Cohen, D. A.

    2016-07-01

    We demonstrate a vertical (<1° departure) and smooth (2.0 nm root mean square line-edge roughness (LER)) etch by chemically assisted Ar ion beam etching (CAIBE) in Cl2 chemistry that is suitable for forming laser diode (LD) facets on nonpolar and semipolar oriented III-nitride devices. The etch profiles were achieved with photoresist masks and optimized CAIBE chamber conditions including the platen tilt angle and Cl2 flow rate. Co-loaded studies showed similar etch rates of ˜60 nm min-1 for (20\\bar{2}\\bar{1}),(20\\bar{2}1), and m-plane orientations. The etched surfaces of LD facets on these orientations are chemically dissimilar (Ga-rich versus N-rich), but were visually indistinguishable, thus confirming the negligible orientation dependence of the etch. Continuous-wave blue LDs were fabricated on the semipolar (20\\bar{2}\\bar{1}) plane to compare CAIBE and reactive ion etch (RIE) facet processes. The CAIBE process resulted in LDs with lower threshold current densities due to reduced parasitic mirror loss compared with the RIE process. The LER, degree of verticality, and model of the 1D vertical laser mode were used to calculate a maximum uncoated facet reflection of 17% (94% of the nominal) for the CAIBE facet. The results demonstrate the suitability of CAIBE for forming high quality facets for high performance nonpolar and semipolar III-N LDs.

  1. Laser-induced back-side etching with liquid and the solid hydrocarbon absorber films of different thicknesses

    NASA Astrophysics Data System (ADS)

    Ehrhardt, M.; Lorenz, P.; Yunxiang, P.; Bayer, L.; Han, B.; Zimmer, K.

    2017-04-01

    Laser-induced backside wet and dry etching (LIBWE and LIBDE) are methods for high-quality surface patterning of transparent dielectrics that making use of an additional absorber material attached to the rear side that is ablated in a confined configuration. Due to the manifold of the involved processes, the mechanism of the etching process and the parameter influence on the material removal process are multifaceted and not fully understood yet. In the present paper, we investigate the influence of the confinement to the backside etching process by studying the impact of the thickness of the attached liquid or solid absorber within a range of 12-125 and 0.2-11.7 μm, respectively. It was found that for the liquid and solid absorbers, the etching rate increases with the thickness of the absorber layer and saturates exceeding a certain value, which depends on the used laser fluence. Moreover, the incubation of etching depends on the absorber thickness. The comparison of the etching results of a similar thickness of the liquid and the solid absorber layers shows that the phase of the absorber (liquid or solid) does not influence the back-side etching process. Time-resolved shadowgraph images of the process indicate that with higher absorber layer thickness, the interaction time and strength of the laser-induced processes at the sample surface increase. The results suggest that confinement of the rear side attached absorber ablation influences the impact of the laser-induced secondary processes to the strength of the material modifications and, therefore, the etching rate.

  2. Thermal analysis of etched-well surface-emitting diode lasers

    SciTech Connect

    Nakwaski, Wlodzimierz; Osinski, Marek )

    1991-11-01

    A new self-consistent thermal-electrical model of etched-well GaAs/AlGaAs vertical-cavity surface-emitting lasers is developed. The model features a realistic distribution of heat sources and two-dimensional current- and heat-flux spreading. It is shown that the P-AlGaAs layer represents a major source of Joule heating that may easily exceed the active-region heating. A moderate increase of the P-AlGaAs layer doping is shown to be very effective in reducing the excessive heating. 8 refs.

  3. Size-dependent Fano Interaction in the Laser-etched Silicon Nanostructures

    PubMed Central

    2008-01-01

    Photo-excitation and size-dependent Raman scattering studies on the silicon (Si) nanostructures (NSs) prepared by laser-induced etching are presented here. Asymmetric and red-shifted Raman line-shapes are observed due to photo-excited Fano interaction in the quantum confined nanoparticles. The Fano interaction is observed between photo-excited electronic transitions and discrete phonons in Si NSs. Photo-excited Fano studies on different Si NSs show that the Fano interaction is high for smaller size of Si NSs. Higher Fano interaction for smaller Si NSs is attributed to the enhanced interference between photo-excited electronic Raman scattering and phonon Raman scattering.

  4. Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching

    NASA Astrophysics Data System (ADS)

    de Boor, Johannes; Geyer, Nadine; Wittemann, Jörg V.; Gösele, Ulrich; Schmidt, Volker

    2010-03-01

    By combining laser interference lithography and metal-assisted etching we were able to produce arrays of silicon nanowires with uniform diameters as small as 65 nm and densities exceeding 2 × 107 mm - 2. The wires are single crystalline, vertically aligned, arranged in a square pattern and obey strict periodicity over several cm2. The applied technique allows for a tailoring of nanowire size and density. Using a controlled and scalable process to fabricate sub-100 nm silicon nanowires is an important step towards the realization of cost-effective electronic and thermoelectric devices.

  5. Patterning of graphene on silicon-on-insulator waveguides through laser ablation and plasma etching

    NASA Astrophysics Data System (ADS)

    Van Erps, Jürgen; Ciuk, Tymoteusz; Pasternak, Iwona; Krajewska, Aleksandra; Strupinski, Wlodek; Van Put, Steven; Van Steenberge, Geert; Baert, Kitty; Terryn, Herman; Thienpont, Hugo; Vermeulen, Nathalie

    2016-05-01

    We present the use of femtosecond laser ablation for the removal of monolayer graphene from silicon-on-insulator (SOI) waveguides, and the use of oxygen plasma etching through a metal mask to peel off graphene from the grating couplers attached to the waveguides. Through Raman spectroscopy and atomic force microscopy, we show that the removal of graphene is successful with minimal damage to the underlying SOI waveguides. Finally, we employ both removal techniques to measure the contribution of graphene to the loss of grating-coupled graphene-covered SOI waveguides using the cut-back method. This loss contribution is measured to be 0.132 dB/μm.

  6. Quantum cascade laser based monitoring of CF2 radical concentration as a diagnostic tool of dielectric etching plasma processes

    NASA Astrophysics Data System (ADS)

    Hübner, M.; Lang, N.; Zimmermann, S.; Schulz, S. E.; Buchholtz, W.; Röpcke, J.; van Helden, J. H.

    2015-01-01

    Dielectric etching plasma processes for modern interlevel dielectrics become more and more complex by the introduction of new ultra low-k dielectrics. One challenge is the minimization of sidewall damage, while etching ultra low-k porous SiCOH by fluorocarbon plasmas. The optimization of this process requires a deeper understanding of the concentration of the CF2 radical, which acts as precursor in the polymerization of the etch sample surfaces. In an industrial dielectric etching plasma reactor, the CF2 radical was measured in situ using a continuous wave quantum cascade laser (cw-QCL) around 1106.2 cm-1. We measured Doppler-resolved ro-vibrational absorption lines and determined absolute densities using transitions in the ν3 fundamental band of CF2 with the aid of an improved simulation of the line strengths. We found that the CF2 radical concentration during the etching plasma process directly correlates to the layer structure of the etched wafer. Hence, this correlation can serve as a diagnostic tool of dielectric etching plasma processes. Applying QCL based absorption spectroscopy opens up the way for advanced process monitoring and etching controlling in semiconductor manufacturing.

  7. A New Method to Modify Two-Dimensional Electron Gas Density by GaN Cap Etching

    NASA Astrophysics Data System (ADS)

    Li, Zhongda; Chow, T. Paul

    2013-08-01

    We have experimentally demonstrated a new method for modifying the two-dimensional electron density (2DEG) at the AlGaN/GaN interface by etching of the GaN cap layer on top of the AlGaN. GaN MOS capacitors have been fabricated on samples with partially or fully etched GaN cap, and the 2DEG density has been extracted. The results show a linear relation between the 2DEG density and the thickness of the GaN cap being etched. We have also fabricated van der Pauw structures and obtained the 2DEG density using Hall measurements, and the results are consistent with that from the GaN MOS capacitors.

  8. Nanosecond laser-induced back side wet etching of fused silica with a copper-based absorber liquid

    NASA Astrophysics Data System (ADS)

    Lorenz, Pierre; Zehnder, Sarah; Ehrhardt, Martin; Frost, Frank; Zimmer, Klaus; Schwaller, Patrick

    2014-03-01

    Cost-efficient machining of dielectric surfaces with high-precision and low-roughness for industrial applications is still challenging if using laser-patterning processes. Laser induced back side wet etching (LIBWE) using UV laser pulses with liquid heavy metals or aromatic hydrocarbons as absorber allows the fabrication of well-defined, nm precise, free-form surfaces with low surface roughness, e.g., needed for optical applications. The copper-sulphatebased absorber CuSO4/K-Na-Tartrate/NaOH/formaldehyde in water is used for laser-induced deposition of copper. If this absorber can also be used as precursor for laser-induced ablation, promising industrial applications combining surface structuring and deposition within the same setup could be possible. The etching results applying a KrF excimer (248 nm, 25 ns) and a Nd:YAG (1064 nm, 20 ns) laser are compared. The topography of the etched surfaces were analyzed by scanning electron microscopy (SEM), white light interferometry (WLI) as well as laser scanning microscopy (LSM). The chemical composition of the irradiated surface was studied by energy-dispersive X-ray spectroscopy (EDX) and Fourier transform infrared spectroscopy (FT-IR). For the discussion of the etching mechanism the laser-induced heating was simulated with finite element method (FEM). The results indicate that the UV and IR radiation allows micro structuring of fused silica with the copper-based absorber where the etching process can be explained by the laser-induced formation of a copper-based absorber layer.

  9. Laser etching causing fatigue fracture at the neck-shoulder junction of an uncemented femoral stem: A case report.

    PubMed

    Jang, Bob; Kanawati, Andrew; Brazil, Declan; Bruce, Warwick

    2013-01-01

    Fatigue fracture of a femoral component in total hip arthroplasty is a rare occurrence but well documented in the literature. It is understood that proximal loosing of a femoral stem with a well fixed stem distally will result in cantilever bending and eventual fatigue fracture of the stem. Other factors which may potentiate a fatigue fracture are material design, implant positioning, and patient characteristics. More recently, laser etching on the femoral neck of an implant has resulted in fatigue fracture. We report a case of a fatigue fracture at the neck-shoulder junction in a well fixed, uncemented, femoral component due to laser etching in the region of high tensile stress.

  10. Smooth and selective photo-electrochemical etching of heavily doped GaN:Si using a mode-locked 355 nm microchip laser

    NASA Astrophysics Data System (ADS)

    Lee, SeungGeun; Mishkat-Ul-Masabih, Saadat; Leonard, John T.; Feezell, Daniel F.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

    2017-01-01

    We investigate the photo-electrochemical (PEC) etching of Si-doped GaN samples grown on nonpolar GaN substrates, using a KOH/K2S2O8 solution and illuminated by a Xe arc lamp or a Q-switched 355 nm laser. The etch rate with the arc lamp decreased as the doping concentration increased, and the etching stopped for concentrations above 7.7 × 1018 cm-3. The high peak intensity of the Q-switched laser extended the etchable concentration to 2.4 × 1019 cm-3, with an etch rate of 14 nm/min. Compositionally selective etching was demonstrated, with an RMS surface roughness of 1.6 nm after etching down to an n-Al0.20Ga0.80N etch stop layer.

  11. Laser marking on soda-lime glass by laser-induced backside wet etching with two-beam interference

    NASA Astrophysics Data System (ADS)

    Nakazumi, Tomoka; Sato, Tadatake; Narazaki, Aiko; Niino, Hiroyuki

    2016-09-01

    For crack-free marking of glass materials, a beam-scanning laser-induced backside wet etching (LIBWE) process by a beam spot with a fine periodic structure was examined. The fine periodic structure was produced within a beam spot by means of a Mach-Zehnder interferometer incorporated to the optical setup for the beam-scanning LIBWE. A fine structure with a period of 9 µm was observed within the microstructures with a diameter of ca. 40 µm fabricated by a laser shot under double-beam irradiation, and they could be homogeneously fabricated within an area of 800  ×  800 µm. The area filled with the microstructures, including fine periodic structures, could be observed in high contrast under a diffuse, on-axis illumination that was used in commercial QR code readers.

  12. Shear bond strength of resin cement to an acid etched and a laser irradiated ceramic surface

    PubMed Central

    Motro, Pelin Fatma Karagoz; Yurdaguven, Haktan

    2013-01-01

    PURPOSE To evaluate the effects of hydrofluoric acid etching and Er,Cr:YSGG laser irradiation on the shear bond strength of resin cement to lithium disilicate ceramic. MATERIALS AND METHODS Fifty-five ceramic blocks (5 mm × 5 mm × 2 mm) were fabricated and embedded in acrylic resin. Their surfaces were finished with 1000-grit silicon carbide paper. The blocks were assigned to five groups: 1) 9.5% hydrofluoric-acid etching for 60 s; 2-4), 1.5-, 2.5-, and 6-W Er,Cr:YSGG laser applications for 60 seconds, respectively; and 5) no treatment (control). One specimen from each group was examined using scanning electron microscopy. Ceramic primer (Rely X ceramic primer) and adhesive (Adper Single Bond) were applied to the ceramic surfaces, followed by resin cement to bond the composite cylinders, and light curing. Bonded specimens were stored in distilled water at 37℃ for 24 hours. Shear bond strengths were determined by a universal testing machine at 1 mm/min crosshead speed. Data were analyzed using Kruskal-Wallis and Mann-Whitney U-tests (α=0.05). RESULTS Adhesion was significantly stronger in Group 2 (3.88 ± 1.94 MPa) and Group 3 (3.65 ± 1.87 MPa) than in Control group (1.95 ± 1.06 MPa), in which bonding values were lowest (P<.01). No significant difference was observed between Group 4 (3.59 ± 1.19 MPa) and Control group. Shear bond strength was highest in Group 1 (8.42 ± 1.86 MPa; P<.01). CONCLUSION Er,Cr:YSGG laser irradiation at 1.5 and 2.5 W increased shear bond strengths between ceramic and resin cement compared with untreated ceramic surfaces. Irradiation at 6 W may not be an efficient ceramic surface treatment technique. PMID:23755333

  13. Laser ablation threshold and etch rate comparison between the ultrafast Yb fiber-based FCPA laser and a Ti:sapphire laser for various materials

    NASA Astrophysics Data System (ADS)

    Bovatsek, James M.; Shah, Lawrence; Arai, Alan Y.; Uehara, Yuzuru

    2004-10-01

    Ti:Sapphire lasers remain the most widely used utlrafast laser. However, precise optical alignment and environmental control are necessary for continuous, long-term stable operatoin of the laser. IMRA's FCPA laser is an air-cooled, Yb fiber-based ultrafast laser designed to operate in an industrial environment and provide a stable, high-quality laser beam. In this work, the micromachining performance of the FCPA laser is directly compared with a conventional Ti:Sapphire regenerative amplifier laser. An experimental study was conducted to determine the ablation threshold and etch rate for a variety of materials (including metals, semiconductors, and dielectrics). The materials chosen for the experiments cover a wide range of optical, mechanical and physical properties. Similar focusing conditions were used for both lasers in order to ensure that any differences in the results are primarily due to the different characteristics of each laser. For materials with a relatively low ablation threshold, the full energy of the Ti:Sapphire laser is not needed. Furthermore, it is near the ablation threshold where ultrafast laser processing provides the benefit of minimal thermal damage to the surrounding material. Although the relatively low pulse energy of the FCPA limits its ability to ablate some harder materials, its high repetition rate increases the material processing speed and its good beam quality and stability facilitates tight, efficient focusing for precise machining of small features.

  14. Large-scale high quality glass microlens arrays fabricated by laser enhanced wet etching.

    PubMed

    Tong, Siyu; Bian, Hao; Yang, Qing; Chen, Feng; Deng, Zefang; Si, Jinhai; Hou, Xun

    2014-11-17

    Large-scale high quality microlens arrays (MLAs) play an important role in enhancing the imaging quality of CCD and CMOS as well as the light extraction efficiency of LEDs and OLEDs. To meet the requirement in MLAs' wide application areas, a rapid fabrication method to fabricate large-scale MLAs with high quality, high fill factor and high uniformity is needed, especially on the glass substrate. In this paper, we present a simple and cost-efficient approach to the development of both concave and convex large-scale microlens arrays (MLAs) by using femtosecond laser wet etching method and replication technique. A large-scale high quality square-shaped microlens array with 512 × 512 units was fabricated.The unit size is 20 × 20 μm² on the whole scale of 1 × 1 cm². Its perfect uniformity and optical performance are demonstrated.

  15. Formation of 300 nm period pore arrays by laser interference lithography and electrochemical etching

    NASA Astrophysics Data System (ADS)

    Liu, J.; Kleimann, P.; Laffite, G.; Jamois, C.; Orobtchouk, R.

    2015-02-01

    This paper highlights that combining laser interference lithography and electrochemical etching is a cost-effective, efficient method to realize periodic nanopore arrays in silicon with lattice pitch as small as 300 nm on centimeter-scale substrates. The fabrication of wide-area and high aspect ratio 2D pore arrays with 250 nm diameter and 5 μm depth is demonstrated. All the steps of the process have been optimized to achieve vertical sidewalls with 50 nm thickness, providing pore arrays with aspect ratio of 100 on n-type silicon substrates over an area of 2 × 2 cm2. These results constitute a technological advance in the realization of ordered pore arrays in silicon with very small lattice parameters, with impact in biotechnology, energy harvesting, or sensors.

  16. Comparison of bond strength and surface morphology of dental enamel for acid and Nd-YAG laser etching

    NASA Astrophysics Data System (ADS)

    Parmeswearan, Diagaradjane; Ganesan, Singaravelu; Ratna, P.; Koteeswaran, D.

    1999-05-01

    Recently, laser pretreatment of dental enamel has emerged as a new technique in the field of orthodontics. However, the changes in the morphology of the enamel surface is very much dependent on the wavelength of laser, emission mode of the laser, energy density, exposure time and the nature of the substance absorbing the energy. Based on these, we made a comparative in vitro study on laser etching with acid etching with reference to their bond strength. Studies were conducted on 90 freshly extracted, non carious, human maxillary or mandibular anteriors and premolars. Out of 90, 60 were randomly selected for laser irradiation. The other 30 were used for conventional acid pretreatment. The group of 60 were subjected to Nd-YAG laser exposure (1060 nm, 10 Hz) at differetn fluences. The remaining 30 were acid pretreated with 30% orthophosphoric acid. Suitable Begg's brackets were selected and bound to the pretreated surface and the bond strength were tested using Instron testing machine. The bond strength achieved through acid pretreatment is found to be appreciably greater than the laser pretreated tooth. Though the bond strength achieved through the acid pretreated tooth is found to be significantly greater than the laser pretreated specimens, the laser pretreatement is found to be successful enough to produce a clinically acceptable bond strength of > 0.60 Kb/mm. Examination of the laser pre-treated tooth under SEM showed globule formation which may produce the mechanical interface required for the retention of the resin material.

  17. Femtosecond laser structuring of silver-containing glass: Silver redistribution, selective etching, and surface topology engineering

    SciTech Connect

    Desmoulin, Jean-Charles; Petit, Yannick; Cardinal, Thierry; Canioni, Lionel; Dussauze, Marc; Lahaye, Michel; Gonzalez, Hernando Magallanes; Brasselet, Etienne

    2015-12-07

    Femtosecond direct laser writing in silver-containing phosphate glasses allows for the three-dimensional (3D) implementation of complex photonic structures. Sample translation along or perpendicular to the direction of the beam propagation has been performed, which led to the permanent formation of fluorescent structures, either corresponding to a tubular shape or to two parallel planes at the vicinity of the interaction voxel, respectively. These optical features are related to significant modifications of the local material chemistry. Indeed, silver depletion areas with a diameter below 200 nm were evidenced at the center of the photo-produced structures while photo-produced luminescence properties are attributed to the formation of silver clusters around the multiphoton interaction voxel. The laser-triggered oxidation-reduction processes and the associated photo-induced silver redistribution are proposed to be at the origin of the observed original 3D luminescent structures. Thanks to such material structuring, surface engineering has been also demonstrated. Selective surface chemical etching of the glass has been obtained subsequently to laser writing at the location of the photo-produced structures, revealing features with nanometric depth profiles and radial dimensions strongly related to the spatial distributions of the silver clusters.

  18. Fabrication of narrow-striped InAs/GaAs quantum dot laser with wet etching technique

    NASA Astrophysics Data System (ADS)

    Li, S. G.; Gong, Q.; Cao, C. F.; Wang, X. Z.; Xia, L. Z.; Yan, J. Y.; Wang, Y.

    2013-07-01

    An InAs/GaAs quantum dot laser, fabricated with a narrow-striped width of 6 μm by a wet etching technique, is reported. The etching solutions are composed of three components, i.e. phosphoric acid, hydrogen peroxide, and deionized water. We observed that the unavoidable undercutting was changed with the ratio of etching solution in the GaAs materials. By taking a suitable ratio of etching solution, good performance of quantum dot laser with a size of 6 μm × 700 μm was achieved for fabrication at room temperature. Under continuous wave mode, the lasing wavelength exhibited a single mode, which is located in the region of 1051 nm. In contrast, multimode lasing with a series of non-lasing gaps appeared and the spectra were gradually broadened to the high energy side by increasing the injection current. The laser has one facet power more than 22 mW, with a slope efficiency of 140 mW/A, just a little above threshold current.

  19. Pulsed Laser-Assisted Focused Electron-Beam-Induced Etching of Titanium with XeF 2 : Enhanced Reaction Rate and Precursor Transport

    DOE PAGES

    Noh, J. H.; Fowlkes, J. D.; Timilsina, R.; ...

    2015-01-28

    We introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing; we do this in order to enhance the etch rate of electron-beam-induced etching. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. Moreover, the evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. Finally, the increased etch rate is attributed to photothermally enhancedmore » Ti–F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone.« less

  20. Pulsed Laser-Assisted Focused Electron-Beam-Induced Etching of Titanium with XeF 2 : Enhanced Reaction Rate and Precursor Transport

    SciTech Connect

    Noh, J. H.; Fowlkes, J. D.; Timilsina, R.; Stanford, M. G.; Lewis, B. B.; Rack, P. D.

    2015-01-28

    We introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing; we do this in order to enhance the etch rate of electron-beam-induced etching. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. Moreover, the evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. Finally, the increased etch rate is attributed to photothermally enhanced Ti–F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone.

  1. Pulsed laser-assisted focused electron-beam-induced etching of titanium with XeF2: enhanced reaction rate and precursor transport.

    PubMed

    Noh, J H; Fowlkes, J D; Timilsina, R; Stanford, M G; Lewis, B B; Rack, P D

    2015-02-25

    In order to enhance the etch rate of electron-beam-induced etching, we introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. The evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. The increased etch rate is attributed to photothermally enhanced Ti-F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone.

  2. Planar waveguide solar concentrator with couplers fabricated by laser-induced backside wet etching

    NASA Astrophysics Data System (ADS)

    Zhang, Nikai

    . The fabrication of the etched holes in the glass is proposed to be based on a self-aligned process using a laser-induced backside etching (LIBWE) method, which is discussed in this project and its feasibility is examined. The role of different parameters to the concentration level and the optical efficiency of the CPV system are studied by simulations in ZEMAX (which is a leading optical analysis/design software) using non-sequential ray tracing. The optical efficiency of this design under different light concentration level is studied and discussed. The main contributions of this research consist of a new design of a waveguide-based CPV system which can be made entirely of glass by a low-cost glass fabrication method, and a feasibility study in terms of critical fabrication steps and optical performance.

  3. An analysis of the shear strength of the bond between enamel and porcelain laminate veneers with different etching systems: acid and Er,Cr:YSGG laser separately and combined.

    PubMed

    Dundar, Berivan; Guzel, Kahraman Gündüz

    2011-11-01

    Conditioning of the enamel surface is now an accepted and widely applied technique used to improve retention in porcelain laminate veneer restorations. The aim of this study was to evaluate strength of the bond between porcelain laminate veneers and tooth surfaces etched with acid and laser, separately and together. The teeth studied comprised 60 incisors extracted for periodontal reasons. These were divided into four groups according to etching method: group 1, acid etching alone; group 2, acid etching followed by laser etching; group 3, laser etching followed by acid etching; group 4, laser etching alone. The teeth were etched with 37% phosphoric acid and a Er,Cr:YSGG laser system. In addition, 60 IPS Empress II cylindrical blocks 2 mm in height and 5 mm in diameter were also prepared for the etched tooth surface. These blocks were bonded to the teeth with dual cured resin cement and shear tests were then performed. After the shear tests, Scanning electron microscopy images of the tooth surfaces were obtained at a magnification of ×3,800. Etching with acid alone yielded the highest mean value of bond shear strength (15.4±3.8 MPa), while laser etching followed by acid etching gave the lowest mean value (11.5±4.6 MPa). The mean values of the bond shear strength for acid etching followed by laser etching and laser etching alone were 13.8±3.9 MPa and 12.8±4.6 MPa, respectively. Statistical analysis revealed no significant differences between the groups. The results suggest that laser etching is easy to apply and less time-consuming. They further suggest that the order in which the acid and laser are applied in combined treatments is important.

  4. InGaN/GaN DFB laser diodes at 434 nm with deeply etched sidewall gratings

    NASA Astrophysics Data System (ADS)

    Slight, Thomas J.; Odedina, Opeoluwa; Meredith, Wyn; Docherty, Kevin E.; Kelly, Anthony E.

    2016-02-01

    We report on deeply etched sidewall grating DFB lasers in the InGaN/GaN material system emitting at a single wavelength around 434 nm. GaN lasers have a wide range of applications in communications, displays and storage. The availability of a single wavelength device with a good side mode suppression ratio (SMSR) would allow further applications to be addressed such as sources for laser cooling and Fraunhofer line operation for solar background free communications. Sidewall etched gratings have the advantage of fabrication with no need for overgrowth and have been demonstrated in a range of other material systems and wavelengths. Importantly for GaN based devices, this design has the potential to minimise fabrication induced damage to the epi structure. We investigated two laser designs, one with 80 % duty-cycle 3rd order gratings and another with 39th order partial gratings. Simulation of the 2D waveguide sections was carried out to find the optimal grating width. For fabrication, the laser ridge and gratings were patterned in a single step using electron beam lithography and ICP etched to a depth of 500 nm. Contact metal was deposited and the sample thinned and cleaved into 1 mm long cavities. The as-cleaved 3rd order lasers emit in the pulsed regime with a SMSR of 20 dB and a peak single-mode output power of 40 mW. The output power is similar to that of parallel processed FP lasers. The 39th order lasers also exhibit narrow spectral width at an output power of 10 mW.

  5. Evaluation of the Bond Strength of Resin Cements Used to Lute Ceramics on Laser-Etched Dentin

    PubMed Central

    Duzdar, Lale; Oksuz, Mustafa; Tanboga, Ilknur

    2014-01-01

    Abstract Objective: The purpose of this study was to investigate the shear bond strength (SBS) of two different adhesive resin cements used to lute ceramics on laser-etched dentin. Background data: Erbium, chromium: yttrium, scandium, gallium, garnet (Er,Cr:YSGG) laser irradiation has been claimed to improve the adhesive properties of dentin, but results to date have been controversial, and its compatibility with existing adhesive resin cements has not been conclusively determined. Materials and methods: Two adhesive cements, one “etch-and-rinse” [Variolink II (V)] and one “self-etch” [Clearfil Esthetic Cement (C)] luting cement, were used to lute ceramic blocks (Vita Celay Blanks, Vita) onto dentin surfaces. In total, 80 dentin specimens were distributed randomly into eight experimental groups according to the dentin surface-etching technique used Er,Cr:YSGG laser and Er:YAG laser: (1) 37% orthophosphoric acid+V (control group), (2) Er,Cr:YSGG laser+V, (3) Er,Cr:YSGG laser+acid+V, (4) Er:YAG laser+V, (5) Er:YAG laser+acid+V, (6) C, (7) Er,Cr:YSGG laser+C, and (8) Er:YAG laser+C. Following these applications, the ceramic discs were bonded to prepared surfaces and were shear loaded in a universal testing machine until fracture. SBS was recorded for each group in MPa. Shear test values were evaluated statistically using the Mann–Whitney U test. Results: No statistically significant differences were evident between the control group and the other groups (p>0.05). The Er,Cr:YSGG laser+A+V group demonstrated significantly higher SBS than did the Er,Cr:YSGG laser+V group (p=0.034). The Er,Cr:YSGG laser+C and Er:YAG laser+C groups demonstrated significantly lower SBS than did the C group (p<0.05). Conclusions: Dentin surfaces prepared with lasers may provide comparable ceramic bond strengths, depending upon the adhesive cement used. PMID:24992276

  6. Effect of acid etching duration on tensile bond strength of composite resin bonded to erbium:yttrium-aluminium-garnet laser-prepared dentine. Preliminary study.

    PubMed

    Chousterman, M; Heysselaer, D; Dridi, S M; Bayet, F; Misset, B; Lamard, L; Peremans, A; Nyssen-Behets, C; Nammour, S

    2010-11-01

    The purpose of this study was to compare the tensile bond strength of composite resin bonded to erbium:yttrium-aluminium-garnet (Er:YAG) laser-prepared dentine after different durations of acid etching. The occlusal third of 68 human third molars was removed in order to expose the dentine surface. The teeth were randomly divided into five groups: group B (control group), prepared with bur and total etch system with 15 s acid etching [37% orthophosphoric acid (H(3)PO(4))]; group L15, laser photo-ablated dentine (200 mJ) (laser irradiation conditions: pulse duration 100 micros, air-water spray, fluence 31.45 J/ cm(2), 10 Hz, non-contact hand pieces, beam spot size 0.9 mm, irradiation speed 3 mm/s, and total irradiation time 2 x 40 s); group L30, laser prepared, laser conditioned and 30 s acid etching; group L60, laser prepared, laser conditioned and 60 s acid etching; group L90, laser prepared, laser conditioned and 90 s acid etching. A plot of composite resin was bonded onto each exposed dentine and then tested for tensile bond strength. The values obtained were statistically analysed by analysis of variance (ANOVA) coupled with the Tukey-Kramer test at the 95% level. A 90 s acid etching before bonding showed the best bonding value (P < 0.05) when compared with all the other groups including the control group. There is no significance difference between other groups, nor within each group and the control group. There was a significant increase in tensile bond strength of the samples acid etched for 90 s.

  7. Silicon structuring by etching with liquid chlorine and fluorine precursors using femtosecond laser pulses

    SciTech Connect

    Radu, C.; Simion, S.; Zamfirescu, M.; Ulmeanu, M.; Enculescu, M.; Radoiu, M.

    2011-08-01

    The aim of this study is to investigate the micrometer and submicrometer scale structuring of silicon by liquid chlorine and fluorine precursors with 200 fs laser pulses working at both fundamental (775 nm) and frequency doubled (387 nm) wavelengths. The silicon surface was irradiated at normal incidence by immersing the Si (111) substrates in a glass container filled with liquid chlorine (CCl{sub 4}) and fluorine (C{sub 2}Cl{sub 3}F{sub 3}) precursors. We report that silicon surfaces develop an array of spikes with single step irradiation processes at 775 nm and equally at 387 nm. When irradiating the Si surface with 400 pulses at 330 mJ/cm{sup 2} laser fluence and a 775 nm wavelength, the average height of the formed Si spikes in the case of fluorine precursors is 4.2 {mu}m, with a full width at half maximum of 890 nm. At the same irradiation wavelength chlorine precursors develop Si spikes 4 {mu}m in height and with a full width at half maximum of 2.3 {mu}m with irradiation of 700 pulses at 560 mJ/cm{sup 2} laser fluence. Well ordered areas of submicrometer spikes with an average height of about 500 nm and a width of 300 nm have been created by irradiation at 387 nm by chlorine precursors, whereas the fluorine precursors fabricate spikes with an average height of 700 nm and a width of about 200 nm. Atomic force microscopy and scanning electron microscopy of the surface show that the formation of the micrometer and sub-micrometer spikes involves a combination of capillary waves on the molten silicon surface and laser-induced etching of silicon, at both 775 nm and 387 nm wavelength irradiation. The energy-dispersive x-ray measurements indicate the presence of chlorine and fluorine precursors on the structured surface. The fluorine precursors create a more ordered area of Si spikes at both micrometer and sub-micrometer scales. The potential use of patterned Si substrates with gradient topography as model scaffolds for the systematic exploration of the role of 3D

  8. Mask-free construction of three-dimensional silicon structures by dry etching assisted gray-scale femtosecond laser direct writing

    NASA Astrophysics Data System (ADS)

    Liu, Xue-Qing; Yu, Lei; Chen, Qi-Dai; Sun, Hong-Bo

    2017-02-01

    A mask-free micro/nano fabrication method is proposed for constructing arbitrary gradient height structures on silicon, combining gray-scale femtosecond laser direct writing (GS-FsLDW) with subsequent dry etching. Arbitrary two-dimensional patterns with a gradient concentration of oxygen atoms can be fabricated on the surface of undoped silicon wafer by FsLDW in air. After dry etching, various three-dimensional (3D) gradient height silicon structures are fabricated by controlling the laser power, scanning step, etching time, and etching power. As an example, a well-defined 3D Fresnel zone plate was fabricated on silicon wafer, which shows excellent focusing and imaging properties. The combination of high precision from dry etching and 3D fabrication ability on non-planar substrates of FsLDW, may broaden its applications in microelectronics, micro-optics, and microelectromechanical systems.

  9. Laser-induced particle size tuning and structural transformations in germanium nanoparticles prepared by stain etching and colloidal synthesis route

    SciTech Connect

    Karatutlu, Ali E-mail: ali.karatutlu@bou.edu.tr; Seker, Isa

    2015-12-28

    In this study, with the aid of Raman measurements, we have observed transformations in small (∼3 nm and ∼10 nm) free-standing Ge nanoparticles under laser light exposure. The nanoparticles were obtained by the chemical stain etching of a monocrystalline Ge wafer and of Ge powder and by colloidal synthesis route. We found that the transformation path depends on laser power and exposure time. At relatively low values of the laser power (2 mW) over a period of 100 min, the Raman signal indicates transformation of the sample from a nanocrystaline to bulk-like state, followed by partial oxidation and finally a conversion of the entire sample into alpha-quartz type GeO{sub 2}. However, when the laser power is set at 60 mW, we observed a heat release during an explosive crystallization of the nanocrystalline material into bulk Ge without noticeable signs of oxidation. Together with the transmission electron microscopy measurements, these results suggest that the chemical stain etching method for the preparation of porous Ge may not be a top-down process as has been widely considered, but a bottom up one. Systematic studies of the laser exposure on Ge nanoparticles prepared by colloidal synthesis results in the fact that the explosive crystallisation is common for H-terminated and partially disordered Ge nanoparticles regardless of its particle size. We suggest possible bio-medical applications for the observed phenomena.

  10. Microleakage in Class V cavities with self-etching adhesive system and conventional rotatory or laser Er,Cr:YSGG

    PubMed Central

    Arnabat, J; España-Tost, T

    2012-01-01

    Objective: To analyse microleakage in Class V cavity preparation with Er;Cr:YSGG at different parameters using a self-etching adhesive system. Background: Several studies reported microleakage around composite restorations when cavity preparation is done or treated by Er;Cr:YSGG laser. We want to compare different energy densities in order to obtain the best parameters, when using a self-etching adhesive system. Methods: A class V preparations was performed in 120 samples of human teeth were divided in 3 groups: (1) Preparation using the burr. (2) Er;Cr:YSGG laser preparation with high energy 4W, 30 Hz, 50% Water 50% Air and (3) Er;Cr:YSGG laser preparation lower energy 1.5 W, 30 Hz, 30% Water 30% Air. All the samples were restored with self-etching adhesive system and hybrid composite. Thermocycling (5000 cycles) and immersed in 0.5% fuchsin. The restorations were sectioned and evaluated the microleakage with a stereomicroscope. Results: Lower energy laser used for preparation showed significant differences in enamel and dentin. To group 3, the microleakage in the enamel was less, whilst the group 1, treated with the turbine, showed less microleakage at dentin level. Group 2 showed the highest microleakage at dentin/cement level. Conclusion: Burr preparation gives the lowest microleakage at cement/dentin level, whilst Er;Cr:YSGG laser at lower power has the low energy obtains lowest microleakage at enamel. On the contrary high-energy settings produce inferior results in terms of microleakage. PMID:24511195

  11. Adhesion of a self-etching system to dental substrate prepared by Er:YAG laser or air abrasion.

    PubMed

    Souza-Zaroni, Wanessa C; Chinelatti, Michelle A; Delfino, Carina S; Pécora, Jesus D; Palma-Dibb, Regina G; Corona, Silmara A M

    2008-08-01

    The purpose of this study was to assess the microtensile bond strength of a self-etching adhesive system to enamel and dentin prepared by Er:YAG laser irradiation or air abrasion, as well as to evaluate the adhesive interfaces by scanning electron microscopy (SEM). For microtensile bond strength test, 80 third molars were randomly assigned to five groups: Group I, carbide bur, control (CB); II, air abrasion with standard tip (ST); III, air abrasion with supersonic tip (SP); IV, Er:YAG laser 250 mJ/4 Hz (L250); V, Er:YAG laser 300 mJ/4 Hz (L300). Each group was divided into two subgroups (n = 8) (enamel, E and dentin, D). E and D surfaces were treated with the self-etching system Adper Prompt L-Pop and composite buildups were done with Filtek Z-250. Sticks with a cross-sectional area of 0.8 mm(2) (+/-0.2 mm(2)) were obtained and the bond strength tests were performed. Data were submitted to ANOVA and Tukey's test. For morphological analysis, disks of 30 third molars were restored, sectioned and prepared for SEM. Dentin presented the highest values of adhesion, differing from enamel. Laser and air-abrasion preparations were similar to enamel. Dentin air-abrasion with standard tip group showed higher bond strength results than Er:YAG-laser groups, however, air-abrasion and Er:YAG laser groups were similar to control group. SEM micrographs revealed that, for both enamel and dentin, the air-abrasion and laser preparations presented irregular adhesive interfaces, different from the ones prepared by rotary instrument. It was concluded that cavity preparations accomplished by both Er:YAG laser energies and air abrasion tips did not positively influence the adhesion to enamel and dentin.

  12. Study of the effects of polishing, etching, cleaving, and water leaching on the UV laser damage of fused silica

    SciTech Connect

    Yoshiyama, J.; Genin, F.Y.; Salleo, A.; Thomas, I.; Kozlowski, M.R.; Sheehan, L.M.; Hutcheon, I.D.; Camp, D.W.

    1997-12-23

    A damage morphology study was performed with a 355 nm Nd:YAG laser on synthetic UV-grade fused silica to determine the effects of post- polish chemical etching on laser-induced damage, compare damage morphologies of cleaved and polished surfaces, and understand the effects of the hydrolyzed surface layer and waste-crack interactions. The samples were polished , then chemically etched in buffered HF solution to remove 45,90,135, and 180 nm of surface material. Another set of samples was cleaved and soaked in boiling distilled water for 1 second and 1 hour. All the samples were irradiated at damaging fluencies and characterized by Normarski optical microscopy and scanning electron microscopy. Damage was initiated as micro-pits on both input and output surfaces of the polished fused silica sample. At higher fluencies, the micro-pits generated cracks on the surface. Laser damage of the polished surface showed significant trace contamination levels within a 50 nm surface layer. Micro-pit formation also appeared after irradiating cleaved fused silica surfaces at damaging fluences. Linear damage tracks corresponding cleaving tracks were often observed on cleaved surfaces. Soaking cleaved samples in water produced wide laser damage tracks.

  13. In situ observation of atomic hydrogen etching on diamond-like carbon films produced by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Cheng, C.-L.; Chia, C.-T.; Chiu, C.-C.; Wu, C.-C.; Cheng, H.-F.; Lin, I.-N.

    2001-04-01

    Atomic hydrogen etching on the pulsed laser deposited (PLD) diamond-like carbon (DLC) films were examined in situ by using Raman spectroscopy. Thermal annealing of the as-prepared DLC films was found to alter the D-band (˜1355 cm -1) and G-band (˜1582 cm -1) from unresolved features at room temperature to clearly separated bands at above 500°C, indicating graphitization of the films. The presence of atomic hydrogen retards graphitization at temperatures lower than 500°C, presumably because reactive atomic hydrogen formed sp 3-bonding carbons which prevented graphitization at below 500°C, while at above 500°C, the hydrogen etches away disordered structure of the DLC film as the intensity changes of the D-bands demonstrate.

  14. AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers

    NASA Astrophysics Data System (ADS)

    Farrell, Robert M.; Haeger, Daniel A.; Hsu, Po Shan; Hardy, Matthew T.; Kelchner, Kathryn M.; Fujito, Kenji; Feezell, Daniel F.; Mishra, Umesh K.; DenBaars, Steven P.; Speck, James S.; Nakamura, Shuji

    2011-09-01

    We present a new method of improving the accuracy and reproducibility of dry etching processes for ridge waveguide InGaN/GaN laser diodes (LDs). A GaN:Al0.09Ga0.91N etch rate selectivity of 11:1 was demonstrated for an m-plane LD with a 40 nm p-Al0.09Ga0.91N etch stop layer (ESL) surrounded by Al-free cladding layers, establishing the effectiveness of AlGaN-based ESLs for controlling etch depth in ridge waveguide InGaN/GaN LDs. These results demonstrate the potential for integrating AlGaN ESLs into commercial device designs where accurate control of the etch depth of the ridge waveguide is necessary for stable, kink-free operation at high output powers.

  15. Laser-assisted focused He+ ion beam induced etching with and without XeF2 gas assist

    DOE PAGES

    Stanford, Michael G.; Mahady, Kyle; Lewis, Brett B.; ...

    2016-10-04

    Focused helium ion (He+) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He+ milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF2 precursor provides a chemical assist for enhanced material removal rate. In conclusion, a pulsed laser-assistedmore » and gas-assisted FIBIE process is shown to increase the etch yield by ~9× relative to the pure He+ sputtering process. These He+ induced nanopatterning techniques improve material removal rate, in comparison to standard He+ sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He+ probe as a nanopattering tool.« less

  16. Direct fabrication of compound-eye microlens array on curved surfaces by a facile femtosecond laser enhanced wet etching process

    NASA Astrophysics Data System (ADS)

    Bian, Hao; Wei, Yang; Yang, Qing; Chen, Feng; Zhang, Fan; Du, Guangqing; Yong, Jiale; Hou, Xun

    2016-11-01

    We report a direct fabrication of an omnidirectional negative microlens array on a curved substrate by a femtosecond laser enhanced chemical etching process, which is utilized as a molding template for duplicating bioinspired compound eyes. The femtosecond laser treatment of the curved glass substrate employs a common x-y-z stage without rotating the sample surface perpendicular to the laser beam, and uniform, omnidirectional-aligned negative microlenses are generated after a hydrofluoric acid etching. Using the negative microlens array on the concave glass substrate as a molding template, we fabricate an artificial compound eye with 3000 positive microlenses of 95-μm diameter close-packed on a 5-mm polymer hemisphere. Compared to the transferring process, the negative microlenses directly fabricated on the curved mold by our method are distortion-free, and the duplicated artificial eye presents clear and uniform imaging capabilities. This work provides a facile and efficient route to the fabrication of microlenses on any curved substrates without complicated alignment and motion control processes, which has the potential for the development of new microlens-based devices and systems.

  17. Characterization and adsorption properties of diatomaceous earth modified by hydrofluoric acid etching.

    PubMed

    Tsai, Wen-Tien; Lai, Chi-Wei; Hsien, Kuo-Jong

    2006-05-15

    This work was a study of the chemical modification of diatomaceous earth (DE) using hydrofluoric acid (HF) solution. Under the experimental conditions investigated, it was found that HF under controlled conditions significantly etched inward into the interior of the existing pore structure in the clay mineral due to its high content of silica, leaving a framework possessing a larger BET surface area (ca. 10 m2 g(-1)) in comparison with that (ca. 4 m2 g(-1)) of its precursor (i.e., DE). Further, the results indicated that the HF concentration is a more determining factor in creating more open pores than other process parameters (temperature, holding time, and solid/liquid ratio). This observation was also in close agreement with the examinations by the silicon analysis, scanning electron microscopy, X-ray diffraction, and Fourier transform infrared spectroscopy. The adsorption kinetics and the adsorption isotherm of methylene blue onto the resulting clay adsorbent can be well described by a pseudo-second-order reaction model and the Freundlich model, respectively.

  18. Comparison of tensile bond strengths of four one-bottle self-etching adhesive systems with Er:YAG laser-irradiated dentin.

    PubMed

    Jiang, Qianzhou; Chen, Minle; Ding, Jiangfeng

    2013-12-01

    This study aimed to investigate the interaction of current one-bottle self-etching adhesives and Er:YAG laser with dentin using a tensile bond strength (TBS) test and scanning electron microscopy (SEM) in vitro. Two hundred and thirteen dentin discs were randomly distributed to the Control Group using bur cutting and to the Laser Group using an Er:YAG laser (200 mJ, VSP, 20 Hz). The following adhesives were investigated: one two-step total-etch adhesive [Prime & Bond NT (Dentsply)] and four one-step self-etch adhesives [G-Bond plus (GC), XENO V (Dentsply), iBond Self Etch (Heraeus) and Adper Easy One (3 M ESPE)]. Samples were restored with composite resin, and after 24-hour storage in distilled water, subjected to the TBS test. For morphological analysis, 12 dentin specimens were prepared for SEM. No significant differences were found between the control group and laser group (p = 0.899); dentin subjected to Prime & Bond NT, XENOV and Adper Easy One produced higher TBS. In conclusion, this study indicates that Er:YAG laser-prepared dentin can perform as well as bur on TBS, and some of the one-step one-bottle adhesives are comparable to the total-etch adhesives in TBS on dentin.

  19. Quantum cascade laser based monitoring of CF{sub 2} radical concentration as a diagnostic tool of dielectric etching plasma processes

    SciTech Connect

    Hübner, M.; Lang, N.; Röpcke, J.; Helden, J. H. van; Zimmermann, S.; Schulz, S. E.; Buchholtz, W.

    2015-01-19

    Dielectric etching plasma processes for modern interlevel dielectrics become more and more complex by the introduction of new ultra low-k dielectrics. One challenge is the minimization of sidewall damage, while etching ultra low-k porous SiCOH by fluorocarbon plasmas. The optimization of this process requires a deeper understanding of the concentration of the CF{sub 2} radical, which acts as precursor in the polymerization of the etch sample surfaces. In an industrial dielectric etching plasma reactor, the CF{sub 2} radical was measured in situ using a continuous wave quantum cascade laser (cw-QCL) around 1106.2 cm{sup −1}. We measured Doppler-resolved ro-vibrational absorption lines and determined absolute densities using transitions in the ν{sub 3} fundamental band of CF{sub 2} with the aid of an improved simulation of the line strengths. We found that the CF{sub 2} radical concentration during the etching plasma process directly correlates to the layer structure of the etched wafer. Hence, this correlation can serve as a diagnostic tool of dielectric etching plasma processes. Applying QCL based absorption spectroscopy opens up the way for advanced process monitoring and etching controlling in semiconductor manufacturing.

  20. An In Vitro Comparison of the Bond Strength of Composite to Superficial and Deep Dentin, Treated With Er:YAG Laser Irradiation or Acid-Etching.

    PubMed

    Alaghehmand, Homayoon; Nezhad Nasrollah, Fatemeh; Nokhbatolfoghahaei, Hanieh; Fekrazad, Reza

    2016-01-01

    Introduction: The aim of this study was to compare the micro-shear bond strength of composite resin on superficial and deep dentin after conditioning with phosphoric acid and Erbium-Doped Yttrium Aluminum Garnet (Er:YAG) laser. Methods: Thirty human molars were selected, roots were removed and crowns were bisected to provide a total of 60 half-crowns. Specimens were ground to expose superficial and deep dentin. Samples were assigned to six groups: (1) AS (acid etching of superficial dentin); (2) AD (acid etching of deep dentin); (3) LS (Er:YAG laser irradiation on superficial dentin); (4) LD (Er:YAG laser irradiation on deep dentin); (5) LAS (Er:YAG laser irradiation on superficial dentin followed by acid etching); (6) LAD (Er:YAG laser irradiation on deep dentin followed by acid etching) The adhesive protocol was performed. Samples were thermocycled and micro-shear bond strength was tested to failure. The data were submitted to statistical analysis with one-way analysis of variance (ANOVA) and Tukey post hoc test. Results: The AS group, demonstrated the greatest amount of micro-shear bond strength. Statistical analysis showed a decrease in bond strength in laser-treated groups which was more significant for deep dentin. Conclusion: Preparation of dentin with laser did not improve bonding to superficial and deep dentin.

  1. An In Vitro Comparison of the Bond Strength of Composite to Superficial and Deep Dentin, Treated With Er:YAG Laser Irradiation or Acid-Etching

    PubMed Central

    Alaghehmand, Homayoon; Nezhad Nasrollah, Fatemeh; Nokhbatolfoghahaei, Hanieh; Fekrazad, Reza

    2016-01-01

    Introduction: The aim of this study was to compare the micro-shear bond strength of composite resin on superficial and deep dentin after conditioning with phosphoric acid and Erbium-Doped Yttrium Aluminum Garnet (Er:YAG) laser. Methods: Thirty human molars were selected, roots were removed and crowns were bisected to provide a total of 60 half-crowns. Specimens were ground to expose superficial and deep dentin. Samples were assigned to six groups: (1) AS (acid etching of superficial dentin); (2) AD (acid etching of deep dentin); (3) LS (Er:YAG laser irradiation on superficial dentin); (4) LD (Er:YAG laser irradiation on deep dentin); (5) LAS (Er:YAG laser irradiation on superficial dentin followed by acid etching); (6) LAD (Er:YAG laser irradiation on deep dentin followed by acid etching) The adhesive protocol was performed. Samples were thermocycled and micro-shear bond strength was tested to failure. The data were submitted to statistical analysis with one-way analysis of variance (ANOVA) and Tukey post hoc test. Results: The AS group, demonstrated the greatest amount of micro-shear bond strength. Statistical analysis showed a decrease in bond strength in laser-treated groups which was more significant for deep dentin. Conclusion: Preparation of dentin with laser did not improve bonding to superficial and deep dentin. PMID:28144437

  2. Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture

    SciTech Connect

    Leonard, J. T. Yonkee, B. P.; Cohen, D. A.; Megalini, L.; Speck, J. S.; Lee, S.; DenBaars, S. P.; Nakamura, S.

    2016-01-18

    We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with a photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to selectively remove the multi-quantum well (MQW) region outside the aperture area, defined by an opaque metal mask. This PEC aperture (PECA) creates an air-gap in the passive area of the device, allowing one to achieve efficient electrical confinement within the aperture, while simultaneously achieving a large index contrast between core of the device (the MQW within the aperture) and the lateral cladding of the device (the air-gap formed by the PEC etch), leading to strong lateral confinement. Scanning electron microscopy and focused ion-beam analysis is used to investigate the precision of the PEC etch technique in defining the aperture. The fabricated single mode PECA VCSEL shows a threshold current density of ∼22 kA/cm{sup 2} (25 mA), with a peak output power of ∼180 μW, at an emission wavelength of 417 nm. The near-field emission profile shows a clearly defined single linearly polarized (LP) mode profile (LP{sub 12,1}), which is in contrast to the filamentary lasing that is often observed in III-nitride VCSELs. 2D mode profile simulations, carried out using COMSOL, give insight into the different mode profiles that one would expect to be displayed in such a device. The experimentally observed single mode operation is proposed to be predominantly a result of poor current spreading in the device. This non-uniform current spreading results in a higher injected current at the periphery of the aperture, which favors LP modes with high intensities near the edge of the aperture.

  3. TiO2 nanowire arrays modified with a simultaneous "etching, doping and deposition" technique for ultrasensitive amperometric immunosensing.

    PubMed

    Liu, Xiaoqiang; Huo, Xiaohe; Liu, Peipei; Tang, Yunfei; Xu, Jun; Ju, Huangxian

    2017-06-15

    In this work, an ultrasensitive immunosensing scaffold was structured with TiO2 nanowire (TiNW) arrays modified with molybdenum (Mo) and MoS2 flakes by a triplex "etching, doping and deposition" technique. The triply modification of TiNW arrays improved their electron transfer, and the decoration of MoS2 flakes on TiNW arrays increased both the conductivity and the specific surface area of TiNW. Accordingly, the triply modified TiNW arrays provided a biocompatible microenviroment for the biomolecules and high specific surface area to load big amount of biomolecules. The immunosensor was prepared by immobilizing capture antibody on the scaffold surface with double amino-reactive crosslinker, and the tracing labels were prepared by immobilizing signal antibody and horseradish peroxidase molecules on cylinder-shaped TiO2 nanorods. After sandwich-type immunoreaction, the tracing labels were quantitatively captured on the immunosensor surface for the detection of carcinoembryonic antigen as a model analyte. This amperometric method showed a linear range of 0.001 and 150ngmL(-1) with a detection limit of 0.5pgmL(-1). This work provided a promising platform for sensitive amperometric immunosensing of protein biomarkers.

  4. Evaluation of self-etching adhesive and Er:YAG laser conditioning on the shear bond strength of orthodontic brackets.

    PubMed

    Contreras-Bulnes, Rosalía; Scougall-Vilchis, Rogelio J; Rodríguez-Vilchis, Laura E; Centeno-Pedraza, Claudia; Olea-Mejía, Oscar F; Alcántara-Galena, María del Carmen Z

    2013-01-01

    The purpose of this study was to evaluate the shear bond strength, the adhesive remnant index scores, and etch surface of teeth prepared for orthodontic bracket bonding with self-etching primer and Er:YAG laser conditioning. One hundred and twenty bovine incisors were randomly divided into four groups. In Group I (Control), the teeth were conditioned with 35% phosphoric acid for 15 seconds. In Group II the teeth were conditioned with Transbond Plus SEP (5 sec); III and IV were irradiated with the Er:YAG 150 mJ (11.0 J/cm²), 150 mJ (19.1 J/cm²), respectively, at 7-12 Hz with water spray. After surface preparation, upper central incisor stainless steel brackets were bonded with Transbond Plus Color Change Adhesive. The teeth were stored in water at 37°C for 24 hours and shear bond strengths were measured, and adhesive remnant index (ARI) was determined. The conditioned surface was observed under a scanning electron microscope. One-way ANOVA and chi-square test were used. Group I showed the significantly highest values of bond strength with a mean value of 8.2 megapascals (MPa). The lesser amount of adhesive remnant was found in Group III. The results of this study suggest that Er:YAG laser irradiation could not be an option for enamel conditioning.

  5. Evaluation of Self-Etching Adhesive and Er:YAG Laser Conditioning on the Shear Bond Strength of Orthodontic Brackets

    PubMed Central

    Contreras-Bulnes, Rosalía; Scougall-Vilchis, Rogelio J.; Rodríguez-Vilchis, Laura E.; Centeno-Pedraza, Claudia; Olea-Mejía, Oscar F.; Alcántara-Galena, María del Carmen Z.

    2013-01-01

    The purpose of this study was to evaluate the shear bond strength, the adhesive remnant index scores, and etch surface of teeth prepared for orthodontic bracket bonding with self-etching primer and Er:YAG laser conditioning. One hundred and twenty bovine incisors were randomly divided into four groups. In Group I (Control), the teeth were conditioned with 35% phosphoric acid for 15 seconds. In Group II the teeth were conditioned with Transbond Plus SEP (5 sec); III and IV were irradiated with the Er:YAG 150 mJ (11.0 J/cm2), 150 mJ (19.1 J/cm2), respectively, at 7–12 Hz with water spray. After surface preparation, upper central incisor stainless steel brackets were bonded with Transbond Plus Color Change Adhesive. The teeth were stored in water at 37°C for 24 hours and shear bond strengths were measured, and adhesive remnant index (ARI) was determined. The conditioned surface was observed under a scanning electron microscope. One-way ANOVA and chi-square test were used. Group I showed the significantly highest values of bond strength with a mean value of 8.2 megapascals (MPa). The lesser amount of adhesive remnant was found in Group III. The results of this study suggest that Er:YAG laser irradiation could not be an option for enamel conditioning. PMID:24228014

  6. Long-wavelength vertical-cavity surface-emitting lasers with selectively etched thin apertures

    NASA Astrophysics Data System (ADS)

    Feezell, Daniel F.

    Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) emitting in the 1300--1600nm wavelength window are attractive light sources for short to mid-range optical fiber communications. These devices target low-loss and low-dispersion minima in standard optical fibers and are expected to provide a low-cost alternative to the existing edge-emitting infrastructure. With low-power consumption, on wafer testing; simple packaging, and high fiber-coupling efficiency, VCSELs are ideal transmitters for CWDM, metro, local area, and storage area networks. Recently, much attention has been devoted to a rich variety of approaches to long-wavelength VCSELs. One underlying problem, however, has been the need to match a reliable high-gain active region with high-index-contrast distributed Bragg reflectors (DBRs) over the full 1300--1600nm wavelength range. One solution to this problem is to utilize well-established InAlGaAs active-region technology coupled with AlGaAsSb DBRs. This combination facilitates monolithic all-epitaxial InP-based devices spanning the entire 1300--1600nm wavelength range. Previously, Dr. Shigeru Nakagawa and Dr. Eric Hall have demonstrated long-wavelength VCSELs with Sb-based technology operating at 1550nm. This dissertation demonstrates the first high-performance InP-based VCSELs with Sb-based DBRs operating at 1310nm, thus solidifying Sb-based technology as a wavelength flexible platform for long-wavelength devices. Also developed is a novel and efficient tunnel-junction aperturing technology for generating extremely low-loss optical and electrical confinement. Lastly, it is shown that the benefits from such an aperturing scheme produce marked improvements in device operation versus previously demonstrated Sb-based VCSELs. The devices from this research generated over 1.6mW single-mode continuous-wave (CW) output power at room temperature (>2mW multi-mode), displayed threshold currents down to 1mA, and operated CW up to 90°C. Furthermore, world

  7. Comparison of Shear Bond Strength of Orthodontic Brackets Bonded to Enamel Prepared By Er:YAG Laser and Conventional Acid-Etching

    PubMed Central

    Hosseini, M.H.; Namvar, F.; Chalipa, J.; Saber, K.; Chiniforush, N.; Sarmadi, S.; Mirhashemi, A.H.

    2012-01-01

    Introduction: The purpose of this study was to compare shear bond strength (SBS) of orthodontic brackets bonded to enamel prepared by Er:YAG laser with two different powers and conventional acid-etching. Materials and Methods: Forty-five human premolars extracted for orthodontic purposes were randomly assigned to three groups based on conditioning method: Group 1- conventional etching with 37% phosphoric acid; Group 2- irradiation with Er:YAG laser at 1 W; and Group 3- irradiation with Er:YAG laser at 1.5 W. Metal brackets were bonded on prepared enamel using a light-cured composite. All groups were subjected to thermocycling process. Then, the specimens mounted in auto-cure acryle and shear bond strength were measured using a universal testing machine with a crosshead speed of 0.5 mm per second. After debonding, the amount of resin remaining on the teeth was determined using the adhesive remnant index (ARI) scored 1 to 5. One-way analysis of variance was used to compare shear bond strengths and the Kruskal-Wallis test was performed to evaluate differences in the ARI for different etching types. Results: The mean and standard deviation of conventional acid-etch group, 1W laser group and 1.5W laser group was 3.82 ± 1.16, 6.97 ± 3.64 and 6.93 ± 4.87, respectively. Conclusion: The mean SBS obtained with an Er:YAG laser operated at 1W or 1.5W is approximately similar to that of conventional etching. However, the high variability of values in bond strength of irradiated enamel should be considered to find the appropriate parameters for applying Er:YAG laser as a favorable alternative for surface conditioning. PMID:22924098

  8. Fabrication of silicon nanowire arrays by near-field laser ablation and metal-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Brodoceanu, D.; Alhmoud, H. Z.; Elnathan, R.; Delalat, B.; Voelcker, N. H.; Kraus, T.

    2016-02-01

    We present an elegant route for the fabrication of ordered arrays of vertically-aligned silicon nanowires with tunable geometry at controlled locations on a silicon wafer. A monolayer of transparent microspheres convectively assembled onto a gold-coated silicon wafer acts as a microlens array. Irradiation with a single nanosecond laser pulse removes the gold beneath each focusing microsphere, leaving behind a hexagonal pattern of holes in the gold layer. Owing to the near-field effects, the diameter of the holes can be at least five times smaller than the laser wavelength. The patterned gold layer is used as catalyst in a metal-assisted chemical etching to produce an array of vertically-aligned silicon nanowires. This approach combines the advantages of direct laser writing with the benefits of parallel laser processing, yielding nanowire arrays with controlled geometry at predefined locations on the silicon surface. The fabricated VA-SiNW arrays can effectively transfect human cells with a plasmid encoding for green fluorescent protein.

  9. Effects of Er:YAG laser on bond strength of self-etching adhesives to caries-affected dentin.

    PubMed

    Koyuturk, Alp Erdin; Ozmen, Bilal; Cortcu, Murat; Tokay, Ugur; Tosun, Gul; Erhan Sari, Mustafa

    2014-04-01

    The erbium:yttrium-aluminum-garnet (Er:YAG) laser may be effective the bond strength of adhesive systems on dentine surfaces, the chemical composition and aggressiveness of adhesive systems in clinical practice. The purpose of this study was to evaluate the effects of the Er:YAG laser system with the bonding ability of two different self-etching adhesives to caries-affected dentine in primary molars. Ninety mid-coronal flat dentine surfaces obtained from sound and caries-affected human primary dentine were treated with an Er:YAG laser or a bur. The prepared surfaces were restored with an adhesive system (Xeno V; Clearfil S³) and a compomer (Dyract Extra). The restored teeth were sectioned with a low-speed saw and 162 samples were obtained. The bond strength of the adhesive systems was tested using the micro-tensile test method. The data were statistically analyzed. A restored tooth in each group was processed for scanning electron microscopy evaluation. The values of the highest bond strength were obtained from the Clearfil S³-Er:YAG laser-sound dentine group in all groups. (24.57 ± 7.27 MPa) (P > 0.05). The values of the lowest bond strength were obtained from the Xeno V-Er:YAG laser-sound dentine group in all groups (11.01 ± 3.89 MPa). It was determined that the Clearfil S³ increased the bond strength on the surface applied with Er:YAG laser according to the Xeno V.

  10. Atomic diffusion in laser surface modified AISI H13 steel

    NASA Astrophysics Data System (ADS)

    Aqida, S. N.; Brabazon, D.; Naher, S.

    2013-07-01

    This paper presents a laser surface modification process of AISI H13 steel using 0.09 and 0.4 mm of laser spot sizes with an aim to increase surface hardness and investigate elements diffusion in laser modified surface. A Rofin DC-015 diffusion-cooled CO2 slab laser was used to process AISI H13 steel samples. Samples of 10 mm diameter were sectioned to 100 mm length in order to process a predefined circumferential area. The parameters selected for examination were laser peak power, pulse repetition frequency (PRF), and overlap percentage. The hardness properties were tested at 981 mN force. Metallographic study and energy dispersive X-ray spectroscopy (EDXS) were performed to observe presence of elements and their distribution in the sample surface. Maximum hardness achieved in the modified surface was 1017 HV0.1. Change of elements composition in the modified layer region was detected in the laser modified samples. Diffusion possibly occurred for C, Cr, Cu, Ni, and S elements. The potential found for increase in surface hardness represents an important method to sustain tooling life. The EDXS findings signify understanding of processing parameters effect on the modified surface composition.

  11. Periodic nanostructuring of Er/Yb-codoped IOG1 phosphate glass by using ultraviolet laser-assisted selective chemical etching

    SciTech Connect

    Pappas, C.; Pissadakis, S.

    2006-12-01

    The patterning of submicron period ({approx_equal}500 nm) Bragg reflectors in the Er/Yb-codoped IOG1 Schott, phosphate glass is demonstrated. A high yield patterning technique is presented, wherein high volume damage is induced into the glass matrix by exposure to intense ultraviolet 213 nm, 150 ps Nd:YAG laser radiation and, subsequently, a chemical development in potassium hydroxide (KOH)/ethylenediamine tetra-acetic acid (EDTA) aqueous solution selectively etches the exposed areas. The electronic changes induced by the 213 nm ultraviolet irradiation are examined by employing spectrophotometric measurements, while an estimation of the refractive index changes recorded is provided by applying Kramers-Kronig transformation to the absorption change data. In addition, real time diffraction efficiency measurements were obtained during the formation of the volume damage grating. After the exposure, the growth of the relief grating pattern in time was measured at fixed time intervals and the dependence of the grating depth on the etching time and exposure conditions is presented. The gratings fabricated are examined by atomic and scanning electron microscopies to reveal the relief topology of the structures. Gratings with average depth of 120 nm and excellent surface quality were fabricated by exposing the IOG1 phosphate glass to 36 000 pulses of 208 mJ/cm{sup 2} energy density, followed by developing in the KOH/EDTA agent for 6 min.

  12. Etching and Growth of GaAs

    NASA Technical Reports Server (NTRS)

    Seabaugh, A. C.; Mattauch, R., J.

    1983-01-01

    In-place process for etching and growth of gallium arsenide calls for presaturation of etch and growth melts by arsenic source crystal. Procedure allows precise control of thickness of etch and newly grown layer on substrate. Etching and deposition setup is expected to simplify processing and improve characteristics of gallium arsenide lasers, high-frequency amplifiers, and advanced integrated circuits.

  13. A novel Model for the Mechanism of Laser-Induced Back Side Wet Etching in Aqueous Cu Solutions using ns Pulses at 1064 nm

    NASA Astrophysics Data System (ADS)

    Schwaller, P.; Zehnder, S.; von Arx, U.; Neuenschwander, B.

    Laser induced back side wet etching has shown to be a promising tool for the micro-structuring of transparent materials. Detailed studies have been performed using UV excimer laser sources, aromatic hydrocarbon and liquid metal absorbers. Only little work is reported however using aqueous Cu solutions as absorbers and ns laser pulses at 1064 nm wavelength. We present a novel model for this specific setup. Our experiments indicate that physisorbed Cu2+ ions at the polar glass surface absorb the laser light. This leads to local thermal stresses in the glass and subsequent micro-ablation.

  14. Laser-Modified Surface Enhances Osseointegration and Biomechanical Anchorage of Commercially Pure Titanium Implants for Bone-Anchored Hearing Systems

    PubMed Central

    Omar, Omar; Simonsson, Hanna; Palmquist, Anders; Thomsen, Peter

    2016-01-01

    Osseointegrated implants inserted in the temporal bone are a vital component of bone-anchored hearing systems (BAHS). Despite low implant failure levels, early loading protocols and simplified procedures necessitate the application of implants which promote bone formation, bone bonding and biomechanical stability. Here, screw-shaped, commercially pure titanium implants were selectively laser ablated within the thread valley using an Nd:YAG laser to produce a microtopography with a superimposed nanotexture and a thickened surface oxide layer. State-of-the-art machined implants served as controls. After eight weeks’ implantation in rabbit tibiae, resonance frequency analysis (RFA) values increased from insertion to retrieval for both implant types, while removal torque (RTQ) measurements showed 153% higher biomechanical anchorage of the laser-modified implants. Comparably high bone area (BA) and bone-implant contact (BIC) were recorded for both implant types but with distinctly different failure patterns following biomechanical testing. Fracture lines appeared within the bone ~30–50 μm from the laser-modified surface, while separation occurred at the bone-implant interface for the machined surface. Strong correlations were found between RTQ and BIC and between RFA at retrieval and BA. In the endosteal threads, where all the bone had formed de novo, the extracellular matrix composition, the mineralised bone area and osteocyte densities were comparable for the two types of implant. Using resin cast etching, osteocyte canaliculi were observed directly approaching the laser-modified implant surface. Transmission electron microscopy showed canaliculi in close proximity to the laser-modified surface, in addition to a highly ordered arrangement of collagen fibrils aligned parallel to the implant surface contour. It is concluded that the physico-chemical surface properties of laser-modified surfaces (thicker oxide, micro- and nanoscale texture) promote bone bonding

  15. Three dimensional material removal model of laser-induced backside wet etching of sapphire substrate with CuSO4 solutions

    NASA Astrophysics Data System (ADS)

    Xie, Xiaozhu; Huang, Xiandong; Jiang, Wei; Wei, Xin; Hu, Wei; Ren, Qinglei

    2017-03-01

    The mechanism of laser-induced backside wet etching (LIBWE) of sapphire substrate with CuSO4 solution is considered as a two-step process. First, it deposits the layer from copper sulfate solution on the backside of sapphire substrate by 1064 nm laser irradiation. Then it is followed by the absorption of deposited layer to laser irradiation, resulting in the etching of the sapphire. Therefore, the material removal of LIBWE is based on laser interaction with multilayer materials (sapphire substrate-deposition layer-liquid solution). A three-dimensional thermal model is established to simulate the material removal during the LIBWE process by considering the material data variations of temperature, enthalpy change and latent heat fusion. The model can predict the groove shape influenced by the laser processing parameters (laser fluence, scanning velocity and scanning pass). The simulation results indicate that the groove depth increases with the decreasing of scanning velocity, the increasing of laser fluence and the scanning pass. The groove width is comparable with the focal beam diameter. Some peaks and valleys occur at the bottom of the groove. A comparison between the modeling and experiment indicates that the groove shape in simulation agrees well with the experiment data at laser pulse energy of 4.3 mJ/pulse, scanning velocity of 15 mm/s and the scanning pass of 4. i.e, the present physical model is effective and feasible.

  16. Modified Phasemeter for a Heterodyne Laser Interferometer

    NASA Technical Reports Server (NTRS)

    Loya, Frank M.

    2010-01-01

    Modifications have been made in the design of instruments of the type described in "Digital Averaging Phasemeter for Heterodyne Interferometry". A phasemeter of this type measures the difference between the phases of the unknown and reference heterodyne signals in a heterodyne laser interferometer. The phasemeter design lacked immunity to drift of the heterodyne frequency, was bandwidth-limited by computer bus architectures then in use, and was resolution-limited by the nature of field-programmable gate arrays (FPGAs) then available. The modifications have overcome these limitations and have afforded additional improvements in accuracy, speed, and modularity. The modifications are summarized.

  17. In vitro analysis of riboflavin-modified, experimental, two-step etch-and-rinse dentin adhesive: Fourier transform infrared spectroscopy and micro-Raman studies

    PubMed Central

    Daood, Umer; Swee Heng, Chan; Neo Chiew Lian, Jennifer; Fawzy, Amr S

    2015-01-01

    To modify two-step experimental etch-and-rinse dentin adhesive with different concentrations of riboflavin and to study its effect on the bond strength, degree of conversion, along with resin infiltration within the demineralized dentin substrate, an experimental adhesive-system was modified with different concentrations of riboflavin (m/m, 0, 1%, 3%, 5% and 10%). Dentin surfaces were etched with 37% phosphoric acid, bonded with respective adhesives, restored with restorative composite–resin, and sectioned into resin–dentin slabs and beams to be stored for 24 h or 9 months in artificial saliva. Micro-tensile bond testing was performed with scanning electron microscopy to analyse the failure of debonded beams. The degree of conversion was evaluated with Fourier transform infrared spectroscopy (FTIR) at different time points along with micro-Raman spectroscopy analysis. Data was analyzed with one-way and two-way analysis of variance followed by Tukey's for pair-wise comparison. Modification with 1% and 3% riboflavin increased the micro-tensile bond strength compared to the control at 24 h and 9-month storage with no significant differences in degree of conversion (P<0.05). The most predominant failure mode was the mixed fracture among all specimens except 10% riboflavin-modified adhesive specimens where cohesive failure was predominant. Raman analysis revealed that 1% and 3% riboflavin adhesives specimens showed relatively higher resin infiltration. The incorporation of riboflavin in the experimental two-step etch-and-rinse adhesive at 3% (m/m) improved the immediate bond strengths and bond durability after 9-month storage in artificial saliva without adversely affecting the degree of conversion of the adhesive monomers and resin infiltration. PMID:25257880

  18. In vitro analysis of riboflavin-modified, experimental, two-step etch-and-rinse dentin adhesive: Fourier transform infrared spectroscopy and micro-Raman studies.

    PubMed

    Daood, Umer; Swee Heng, Chan; Neo Chiew Lian, Jennifer; Fawzy, Amr S

    2015-06-26

    To modify two-step experimental etch-and-rinse dentin adhesive with different concentrations of riboflavin and to study its effect on the bond strength, degree of conversion, along with resin infiltration within the demineralized dentin substrate, an experimental adhesive-system was modified with different concentrations of riboflavin (m/m, 0, 1%, 3%, 5% and 10%). Dentin surfaces were etched with 37% phosphoric acid, bonded with respective adhesives, restored with restorative composite-resin, and sectioned into resin-dentin slabs and beams to be stored for 24 h or 9 months in artificial saliva. Micro-tensile bond testing was performed with scanning electron microscopy to analyse the failure of debonded beams. The degree of conversion was evaluated with Fourier transform infrared spectroscopy (FTIR) at different time points along with micro-Raman spectroscopy analysis. Data was analyzed with one-way and two-way analysis of variance followed by Tukey's for pair-wise comparison. Modification with 1% and 3% riboflavin increased the micro-tensile bond strength compared to the control at 24 h and 9-month storage with no significant differences in degree of conversion (P<0.05). The most predominant failure mode was the mixed fracture among all specimens except 10% riboflavin-modified adhesive specimens where cohesive failure was predominant. Raman analysis revealed that 1% and 3% riboflavin adhesives specimens showed relatively higher resin infiltration. The incorporation of riboflavin in the experimental two-step etch-and-rinse adhesive at 3% (m/m) improved the immediate bond strengths and bond durability after 9-month storage in artificial saliva without adversely affecting the degree of conversion of the adhesive monomers and resin infiltration.

  19. Laser Doppler velocimetry using a modified computer mouse

    NASA Astrophysics Data System (ADS)

    Zaron, Edward D.

    2016-10-01

    A computer mouse has been modified for use as a low-cost laser Doppler interferometer and used to measure the two-component fluid velocity of a flowing soap film. The mouse sensor contains two vertical cavity surface emitting lasers, photodiodes, and signal processing hardware integrated into a single package, approximately 1 cm2 in size, and interfaces to a host computer via a standard USB port. Using the principle of self-mixing interferometry, whereby laser light re-enters the laser cavity after being scattered from a moving target, the Doppler shift and velocity of scatterers dispersed in the flow are measured. Observations of the boundary layer in a turbulent soap film channel flow demonstrate the capabilities of the sensor.

  20. Effects of texturization due to chemical etching and laser on the optical properties of multicrystalline silicon for applications in solar cells

    NASA Astrophysics Data System (ADS)

    Vera, D.; Mass, J.; Manotas, M.; Cabanzo, R.; Mejia, E.

    2016-02-01

    In this work we carried out the texturization of surfaces of multicrystalline silicon type-p in order to decrease the reflection of light on the surface, using the chemical etching method and then a treatment with laser. In the first method, it was immersed in solutions of HF:HNO3:H2O, HF:HNO3:CH3COOH, HF:HNO3:H3PO4, in the proportion 14:01:05, during 30 seconds, 1, 2 and 3 minutes. Subsequently with a laser (ND:YAG) grids were generated beginning with parallel lines separated 50μm. The samples were analyzed by means of diffuse spectroscopy (UV-VIS) and scanning electron micrograph (SEM) before and after the laser treatment. The lowest result of reflectance obtained by HF:HNO3:H2O during 30 seconds, was of 15.5%. However, after applying the treatment with laser the reflectance increased to 17.27%. On the other hand, the samples treated (30 seconds) with acetic acid and phosphoric acid as diluents gives as a result a decrease in the reflectance values after applying the laser treatment from 21.97% to 17.79% and from 27.73% to 20.03% respectively. The above indicates that in some cases it is possible to decrease the reflectance using jointly the method of chemical etching and then a laser treatment.

  1. Rapid 2D incoherent mirror fabrication by laser interference lithography and wet etching for III-V MQW solar cells

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Freundlich, Alex

    2016-03-01

    Optimization of non-planar antireflective coating and back- (or front-) surface texturing are widely studied as advanced light management approach to further reduce the reflection losses and increase the sunlight absorption path in solar cells. Rear reflectors have been developed from coherent mirrors to incoherent mirrors in order to further increase light path, which can significantly improve the efficiency and allow for much thinner devices. A Lambertian surface, which has the most random texture, can theoretically raise the light path to 4n2 times that of a smooth surface. It's a challenge however to fabricate ideal Lambertian texture, especially in a fast and low cost way. In this work, a method is developed to overcome this challenge that combines the use of laser interference lithography (LIL) and selective wet etching. This approach allows for a rapid (10 min) wafer scale (3 inch wafer) texture processing with sub-wavelength (nano)-scale control of the pattern and the pitch. The technique appears as being particularly attractive for the development of ultrathin III-V devices, or in overcoming the weak sub-bandgap absorption in devices incorporating quantum dots or quantum wells. The structure of the device is demonstrated, without affecting active layers.

  2. A study of laser-induced blue emission with nanosecond decay of silicon nanoparticles synthesized by a chemical etching method.

    PubMed

    Bagabas, Abdulaziz A; Gondal, Mohammed A; Dastageer, Mohammed A; Al-Muhanna, Abdulrahman A; Alanazi, Thaar H; Ababtain, Moath A

    2009-09-02

    Silicon nanoparticles (Si NPs), exhibiting a strong visible photoluminescence (PL), have found many applications in optoelectronics devices, biomedical tags and flash memories. Chemical etching is a well-known method for synthesizing orange-luminescent, hydride-capped silicon nanoparticles (H/Si NPs). However, a blueshift in emission wavelength occurs when reducing the particle size to exciton Bohr radius or less. In this paper, we attempted to synthesize and characterize H/Si NPs that emit lower wavelengths at room temperature. We proved that our method succeeded in synthesizing H/Si NPs with emission in the blue region. The wavelength-resolved and time-resolved studies of the PL were executed for H/Si NPs in methanol (MeOH), pyridine (py) and furan, using the 355 nm pulsed radiation from a Nd:YAG laser. In addition, excitation wavelength-dependent and PL studies were executed using the spectrofluorometer with a xenon (Xe) broad band light source. We noticed solvent-dependent PL spectra with sharp peaks near 420 nm and a short lifetime less than 100 ns. The morphology and particle size were investigated by high resolution transmission electron microscope (HRTEM). Particles as small as one nanometer were observed in MeOH and py suspensions while two-nanometer particles were observed in the furan suspension.

  3. Topography-based surface tension gradients to facilitate water droplet movement on laser-etched copper substrates.

    PubMed

    Sommers, A D; Brest, T J; Eid, K F

    2013-09-24

    This paper describes a method for creating a topography-based gradient on a metallic surface to help mitigate problems associated with condensate retention. The gradient was designed to promote water droplet migration toward a specified region on the surface which would serve as the primary conduit for drainage using only the roughness of the surface to facilitate the movement of the droplets. In this work, parallel microchannels having a fixed land width but variable spacing were etched into copper substrates to create a surface tension gradient along the surface of the copper. The surfaces were fabricated using a 355 nm Nd:YVO4 laser system and then characterized using spray testing techniques and water droplet (2-10 μL) injection via microsyringe. The distances that individual droplets traveled on the gradient surface were also measured using a goniometer and CCD camera and were found to be between 0.5 and 1.5 mm for surfaces in a horizontal orientation. Droplet movement was spontaneous and did not require the use of chemical coatings. The theoretical design and construction of surface tension gradients were also explored in this work by calculating the minimum gradient needed for droplet movement on a horizontal surface using Wenzel's model of wetting. The results of this study suggest that microstructural patterning could be used to help reduce condensate retention on metallic fins such as those used in heat exchangers in heating, ventilation, air-conditioning, and refrigeration (HVAC&R) applications.

  4. Uniform nano-ripples on the sidewall of silicon carbide micro-hole fabricated by femtosecond laser irradiation and acid etching

    SciTech Connect

    Khuat, Vanthanh; Chen, Tao; Gao, Bo; Si, Jinhai Ma, Yuncan; Hou, Xun

    2014-06-16

    Uniform nano-ripples were observed on the sidewall of micro-holes in silicon carbide fabricated by 800-nm femtosecond laser and chemical selective etching. The morphology of the ripple was analyzed using scanning electronic microscopy. The formation mechanism of the micro-holes was attributed to the chemical reaction of the laser affected zone with mixed solution of hydrofluoric acid and nitric acid. The formation of nano-ripples on the sidewall of the holes could be attributed to the standing wave generated in z direction due to the interference between the incident wave and the reflected wave.

  5. Evaluation of the tensile bond strength of an adhesive system self-etching in dentin irradiated with Er:YAG laser

    NASA Astrophysics Data System (ADS)

    de Mello, Andrea M. D.; Mello, Fabiano A. S.; Matson, Edmir; Mattos, Adriana B.; Mello, Guilerme S.

    2001-04-01

    Since Buonocore, several researchers have been seeking for the best adhesive system and treatment for the enamel and dentin surfaces. The use of the acid has been presented as one of the best techniques of dentin conditioning, because this promotes the removal of the 'smear layer' and exhibition of dentinal structure, for a best penetration and micro-retention of the adhesive system. However, some conditioning methods have been appearing in the literature, for the substitution or interaction with the acid substances, as the laser. The objective of this work is to evaluate the tensile bond strength of the adhesive system 'self-etching' associated to a composed resin, in dentin surfaces conditioned with the Er:YAG laser. For this study, freshly extracted human teeth were used and in each one the dentinal surfaces, which were treated with three sandpapers of different granulations to obtain a standard of the smear layer, before the irradiation of the laser and of the restoring procedure. After these procedures the specimens were storage in distilled water at 37 degrees for 24 hours. Soon after, they were submitted to the tensile strength test. After analyzing the results, we can conclude that the use of the Er:YAG laser can substitute the drill without the need of conditioning, when using the adhesive system 'self etching' in the dentinal surfaces because there was a decline in the strength of adhesion in the groups conditioned with the laser.

  6. Effect of blood contamination on shear bond strength of brackets bonded with a self-etching primer combined with a resin-modified glass ionomer.

    PubMed

    Cacciafesta, Vittorio; Sfondrini, Maria Francesca; Scribante, Andrea; De Angelis, Marco; Klersy, Catherine

    2004-12-01

    This study assessed the effect of blood contamination on the shear bond strength and bond failure site of a resin-modified glass ionomer (Fuji Ortho LC, GC Europe, Leuven, Belgium) used with 3 enamel conditioners (10% polyacrylic acid, 37% phosphoric acid, and self-etching primer). One hundred twenty bovine permanent mandibular incisors were randomly divided into 8 groups; each group consisted of 15 specimens. Two enamel surface conditions were studied: dry and contaminated with blood. One hundred twenty stainless steel brackets were bonded with the resin-modified glass ionomer. After bonding, all samples were stored in distilled water for 24 hours and then tested in shear mode on a testing machine. The groups conditioned with self-etching primer and 37% phosphoric acid had the highest bond strengths for both dry and blood-contaminated enamel. The groups conditioned with 10% polyacrylic acid showed significantly lower shear bond strength value, and the unconditioned groups had the lowest bond strengths. For each enamel conditioner, no significant difference was reported between dry and blood-contaminated groups. Significant differences in debond locations were found among the groups bonded with the different conditioners. Blood contamination of enamel during the bonding procedure of Fuji Ortho LC did not affect its bond strength values, no matter which enamel conditioner was used.

  7. Fabrication of nanostructured silicon by metal-assisted etching and its effects on matrix-free laser desorption/ionization mass spectrometry.

    PubMed

    Chen, W Y; Huang, J T; Cheng, Y C; Chien, C C; Tsao, C W

    2011-02-21

    A matrix-free, high sensitivity, nanostructured silicon surface assisted laser desorption/ionization mass spectrometry (LDI-MS) method fabricated by metal-assisted etching was investigated. Effects of key process parameters, such as etching time, substrate resistance and etchant composition, on the nanostructured silicon formation and its LDI-MS efficiency were studied. The results show that the nanostructured silicon pore depth and size increase with etching time, while MS ion intensity increases with etching time to 300 s then decreases until 600 s for both low resistance (0.001-0.02Ωcm) and high resistance (1-100Ωcm) silicon substrates. The nanostructured silicon surface morphologies were found to directly affect the LDI-MS signal ion intensity. By characterizing the nanostructured silicon surface roughness using atomic force microscopy (AFM) and sample absorption efficiency using fluorescence microscopy, it was further demonstrated that the nanostructured silicon surface roughness was highly correlated to the LDI-MS performance.

  8. Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

    PubMed Central

    2011-01-01

    Nanostructuring of ultrathin HfO2 films deposited on GaAs (001) substrates by high-resolution Lloyd's mirror laser interference nanolithography is described. Pattern transfer to the HfO2 film was carried out by reactive ion beam etching using CF4 and O2 plasmas. A combination of atomic force microscopy, high-resolution scanning electron microscopy, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy microanalysis was used to characterise the various etching steps of the process and the resulting HfO2/GaAs pattern morphology, structure, and chemical composition. We show that the patterning process can be applied to fabricate uniform arrays of HfO2 mesa stripes with tapered sidewalls and linewidths of 100 nm. The exposed GaAs trenches were found to be residue-free and atomically smooth with a root-mean-square line roughness of 0.18 nm after plasma etching. PACS: Dielectric oxides 77.84.Bw, Nanoscale pattern formation 81.16.Rf, Plasma etching 52.77.Bn, Fabrication of III-V semiconductors 81.05.Ea PMID:21711946

  9. A modified pump laser system to pump the titanium sapphire laser

    NASA Technical Reports Server (NTRS)

    Petway, Larry B.

    1990-01-01

    As a result of the wide tunability of the titanium sapphire laser NASA has sited it to be used to perform differential absorption lidar (DIAL) measurements of H2O vapor in the upper and lower troposphere. The titanium sapphire laser can provide a spectrally narrow (0.3 to 1.0 pm), high energy (0.5 to 1.0 J) output at 727, 762, and 940 nm which are needed in the DIAL experiments. This laser performance can be obtained by addressing the line-narrowing issues in a master oscillator and the high energy requirement in a fundamental mode oscillator. By injection seeding, the single frequency property of the master oscillator can produce a line narrow high energy power oscillator. A breadboard model of the titanium sapphire laser that will ultimately be used in NASA lidar atmospheric sensing experiment is being designed. The task was to identify and solve any problem that would arise in the actual laser system. One such problem was encountered in the pump laser system. The pump laser that is designed to pump both the master oscillator and power oscillator is a Nd:YLF laser. Nd:YLF exhibits a number of properties which renders this material an attractive option to be used in the laser system. The Nd:YLF crystal is effectively athermal; it produces essentially no thermal lensing and thermally induced birefringence is generally insignificant in comparison to the material birefringence resulting from the uniaxial crystal structure. However, in application repeated fracturing of these laser rods was experience. Because Nd:YLF rods are not commercially available at the sizes needed for this application a modified pump laser system to replace the Nd:YLF laser rod was designed to include the more durable Nd:YAG laser rods. In this design, compensation for the thermal lensing effect that is introduced because of the Nd:YAG laser rods is included.

  10. Laser ignition of elastomer-modified cast double-base (EMCDB) propellant using a diode laser

    NASA Astrophysics Data System (ADS)

    Herreros, Dulcie N.; Fang, Xiao

    2017-03-01

    An experimental study was conducted to investigate laser ignition using a diode laser for elastomer-modified cast double-base (EMCDB) propellant in order to develop more liable and greener laser ignitors for direct initiation of the propellant. Samples of the propellant were ignited using a 974 nm near-infrared diode laser. Laser beam parameters including laser power, beam width and pulse width were investigated to determine their effects on the ignition performance in terms of delay time, rise time and burn time of the propellant which was arranged in several different configurations. The results have shown that the smaller beam widths, longer pulse widths and higher laser powers resulted in shorter ignition delay times and overall burn times, however, there came a point at which increasing the amount of laser energy transferred to the material resulted in no significant reduction in either delay time or overall burn time. The propellant tested responded well to laser ignition, a discovery which supports continued research into the development of laser-based propellant ignitors.

  11. Morphology of resin-dentin interfaces after Er,Cr:YSGG laser and acid etching preparation and application of different bonding systems.

    PubMed

    Beer, Franziska; Buchmair, Alfred; Körpert, Wolfram; Marvastian, Leila; Wernisch, Johann; Moritz, Andreas

    2012-07-01

    The goal of this study was to show the modifications in the ultrastructure of the dentin surface morphology following different surface treatments. The stability of the adhesive compound with dentin after laser preparation compared with conventional preparation using different bonding agents was evaluated. An Er,Cr:YSGG laser and 36% phosphoric acid in combination with various bonding systems were used. A total of 100 caries-free human third molars were used in this study. Immediately after surgical removal teeth were cut using a band saw and 1-mm thick dentin slices were created starting at a distance of 4 mm from the cusp plane to ensure complete removal of the enamel. The discs were polished with silicon carbide paper into rectangular shapes to a size of 6 × 4 mm (±0,2 mm).The discs as well as the remaining teeth stumps were stored in 0.9% NaCl at room temperature. The specimens were divided into three main groups (group I laser group, group II etch group, group III laser and etch group) and each group was subdivided into three subgroups which were allocated to the different bonding systems (subgroup A Excite, subgroup B Scotchbond, subgroup C Syntac). Each disc and the corresponding tooth stump were treated in the same way. After preparation the bonding composite material was applied according to the manufacturers' guidelines in a hollow tube of 2 mm diameter to the disc as well as to the corresponding tooth stump. Shear bond strength testing and environmental scanning electron microscopy were used to assess the morphology and stability of the resin-dentin interface. The self-etching bonding system showed the highest and the most constant shear values in all three main groups, thus enabling etching with phosphoric acid after laser preparation to be avoided. Thus we conclude that laser preparation creates a surface texture that allows prediction of the quality of the restoration without the risk of negative influences during the following treatment steps. This

  12. Hydrogen evolution at a Pt-modified InP photoelectrode: Improvement of current-voltage characteristics by HCl etching

    SciTech Connect

    Kobayashi, Hikaru; Mizuno, Fumiaki; Nakato, Yoshihiro; Tsubomura, Hiroshi )

    1991-01-24

    Hydrogen photoevolution at p-InP electrodes coated with platinum and palladium has been studied. Efficient and stable solar to chemical energy conversion has been achieved after etching the electrodes with concentrated HCl. The current-voltage (I-V) behavior of the as-prepared electrode covered with a continuous Pt layer is poor, due probably to the presence of defect states in InP. The photocurrent density of this electrode decreases with time under illumination, presumably due to an increase in the defect density. After etching of the electrode with concentrated HCl, the barrier height is increased to 1.0 V, and the I-V characteristics are improved remarkably, showing no degradation under illumination. SEM, XPS, and AES analyses show that the concentrated HCl solution dissolves the InP substrate in the InP/Pt interfacial region, and simultaneously part of the Pt is removed from the InP surface. The I-V characteristics of the Pt-deposited electrodes are unaffected by hydrogen or nitrogen bubbling and the reason is discussed.

  13. Photoluminescence Enhancement and Thermal Performance of Surface Modified Y3Al5O12:Ce3+ Phosphor by Chemical Wet Etching

    NASA Astrophysics Data System (ADS)

    He, Zhijiang; Li, Zebin; Fan, Xiaoxuan; Cheng, Weihai; Ju, Jiaqi; Ou, Qiongrong; Liang, Rongqing

    2013-02-01

    Surface of Y3Al5O12:Ce3+ Phosphor was modified by wet etching in 40% NH4F+CH3COOH (1:1) solution for 5 h. SEM results show that smooth surface of phosphor particles turn rough, and edge angles are less sharp as before. PL determinations indicate that backscattering loss of the excited light reduces by 3.9% and emission power is enhanced by 10.7%. Meanwhile, after the surface modification, YAG phosphor presents a lower temperature decay rate of 1.2% at 373 K, which is well explained by the configurational coordinate diagram. Therefore, this method can greatly enhance the efficient of light conversion, extraction and stabilization of pc-LED.

  14. Laser-assisted focused He+ ion beam induced etching with and without XeF2 gas assist

    SciTech Connect

    Stanford, Michael G.; Mahady, Kyle; Lewis, Brett B.; Fowlkes, Jason D.; Tan, Shida; Livengood, Richard; Magel, Gregory A.; Moore, Thomas M.; Rack, Philip D.

    2016-10-04

    Focused helium ion (He+) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He+ milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF2 precursor provides a chemical assist for enhanced material removal rate. In conclusion, a pulsed laser-assisted and gas-assisted FIBIE process is shown to increase the etch yield by ~9× relative to the pure He+ sputtering process. These He+ induced nanopatterning techniques improve material removal rate, in comparison to standard He+ sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He+ probe as a nanopattering tool.

  15. Confocal laser spectroscopy of glasses modified by ultrashort laser pulses for waveguide fabrication

    NASA Astrophysics Data System (ADS)

    Chan, James Wai-Jeung

    2002-08-01

    The work described in this thesis involves the fabrication of waveguiding structures inside glasses using femtosecond (fs) laser pulses and the study of the different atomic scale changes associated with refractive index modification that occur in the fs laser modified glasses. This study helps elucidate the possible processes that occur during fs laser writing of waveguides in glasses. Waveguide writing inside fused silica and phosphate glass using focused fs laser pulses has been demonstrated. The modification induced inside both glasses is determined to be different. Inside fused silica, the modification involves a single high index region while inside the phosphate glass (IOG-1, Schott Glass Technologies, Inc.), the modification results in a central, low index, non-guiding region bordered by two, high index, waveguiding regions. The waveguides inside both glasses have an index change on the order of 10 -4. Color center defects have been identified in modified glasses using confocal fluorescence spectroscopy. Modified fused silica exhibits a fluorescence band at 630 nm and at 540 nm, which are attributed to the non-bridging oxygen hole center (NBOHC) and oxygen vacancy defects created by the fs pulses. A fluorescence band at 600 nm is observed in modified phosphate glass, which is assigned to the phosphorus oxygen hole center (POHC) defect. A quantitative analysis of the photobleaching of these defects with exposure to 488 nm light is conducted. Fluorescence imaging of the modified materials is performed to elucidate the location of these defects within the exposed regions in the glass. Using confocal Raman spectroscopy, atomic scale structural changes in the glass network of modified fused silica are reported and correlated to the changes in the physical properties of the material. The changes in the Raman spectrum of modified fused silica, specifically increases in the 490 cm-1 and 605 cm-1 peaks, indicate that fs pulses induce densification in fused silica

  16. Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

    NASA Astrophysics Data System (ADS)

    Papatryfonos, Konstantinos; Saladukha, Dzianis; Merghem, Kamel; Joshi, Siddharth; Lelarge, Francois; Bouchoule, Sophie; Kazazis, Dimitrios; Guilet, Stephane; Le Gratiet, Luc; Ochalski, Tomasz J.; Huyet, Guillaume; Martinez, Anthony; Ramdane, Abderrahim

    2017-02-01

    Single-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quantum dash (Qdash) active regions and etched lateral Bragg gratings. The lasers have been designed to operate at wavelengths near 2 μm and exhibit a threshold current of 65 mA for a 600 μm long cavity, and a room temperature continuous wave output power per facet >5 mW. Using our novel growth approach based on the low ternary In0.53Ga0.47As barriers, we also demonstrate ridge-waveguide lasers emitting up to 2.1 μm and underline the possibilities for further pushing the emission wavelength out towards longer wavelengths with this material system. By introducing experimentally the concept of high-duty-cycle lateral Bragg gratings, a side mode suppression ratio of >37 dB has been achieved, owing to an appreciably increased grating coupling coefficient of κ ˜ 40 cm-1. These laterally coupled distributed feedback (LC-DFB) lasers combine the advantage of high and well-controlled coupling coefficients achieved in conventional DFB lasers, with the regrowth-free fabrication process of lateral gratings, and exhibit substantially lower optical losses compared to the conventional metal-based LC-DFB lasers.

  17. Erbium, chromium:yttrium scandium gallium garnet laser for caries removal: influence on bonding of a self-etching adhesive system.

    PubMed

    Tachibana, Arlene; Marques, Márcia Martins; Soler, Julia Maria Pavan; Matos, Adriana Bona

    2008-10-01

    This study evaluated the influence of the dental substrates obtained after the use of different caries removal techniques on bonding of a self-etching system. Forty, extracted, carious, human molars were ground to expose flat surfaces containing caries-infected dentine surrounded by sound dentine. The caries lesions of the specimens were removed or not (control--G1) either by round steel burs and water-cooled, low speed, handpiece (G2), or by irradiation with an erbium, chromium:yttrium scandium gallium garnet (Er,Cr:YSGG) laser (2W, 20 Hz, 35.38 J/cm(2), fiber G4 handpiece with 0.2826 mm(2), non-contact mode at a 2 mm distance, 70% air/20% water--G3) or using a chemo-mechanical method (Carisolv--G4). Caries-infected, caries-affected and sound dentines were submitted to a bonding system followed by construction of a resin-based composite crown. Hour-glass shaped samples were obtained and submitted to a micro-tensile bond test. The bond strength data were compared by analysis of variance (ANOVA), complemented by Tukey's test (P laser. The highest bond strengths were observed with the sound dentine treated with burs and Carisolv. The bond strengths to caries-affected dentine were similar in all groups. Additionally, bonding to caries-affected dentine of the Er,Cr:YSGG laser and Carisolv groups was similar to bonding to caries-infected dentine. Thus, caries-affected dentine is not an adequate substrate for adhesion. Moreover, amongst the caries removal methods tested, the Er,Cr:YSGG laser irradiation was the poorest in providing a substrate for bonding with the tested self-etching system.

  18. Enhanced performance of solar cells with optimized surface recombination and efficient photon capturing via anisotropic-etching of black silicon

    SciTech Connect

    Chen, H. Y.; Peng, Y. E-mail: py@usst.edu.cn; Hong, M.; Zhang, Y. B.; Cai, Bin; Zhu, Y. M.; Yuan, G. D. E-mail: py@usst.edu.cn; Zhang, Y.; Liu, Z. Q.; Wang, J. X.; Li, J. M.

    2014-05-12

    We report an enhanced conversion efficiency of femtosecond-laser treated silicon solar cells by surface modification of anisotropic-etching. The etching improves minority carrier lifetime inside modified black silicon area substantially; moreover, after the etching, an inverted pyramids/upright pyramids mixed texture surface is obtained, which shows better photon capturing capability than that of conventional pyramid texture. Combing of these two merits, the reformed solar cells show higher conversion efficiency than that of conventional pyramid textured cells. This work presents a way for fabricating high performance silicon solar cells, which can be easily applied to mass-production.

  19. Thermal poling induced second-order nonlinearity in femtosecond- laser-modified fused silica

    SciTech Connect

    An Honglin; Fleming, Simon; McMillen, Benjamin W.; Chen, Kevin P.; Snoke, David

    2008-08-11

    Thermal poling was utilized to induce second-order nonlinearity in regions of fused silica modified by 771 nm femtosecond laser pulses. With second-harmonic microscopy, it was found that the nonlinearity in the laser-modified region was much lower than that in nonmodified regions. This is attributed to a more rigid glass network after irradiation by the femtosecond laser pulses and/or lack of mobile alkali ions. Measurement of the distribution of chemical elements in the femtosecond-laser-modified region in a soda lime glass revealed a lower level of sodium ions.

  20. The Effect of Er,Cr:YSGG Laser Irradiation on the Push-Out Bond Strength of RealSeal Self-Etch Sealer

    PubMed Central

    Ehsani, Sara; Etemadi, Ardavan; Ghorbanzadeh, Abdollah; Sabet, Yazdan; Nosrat, Ali

    2013-01-01

    Abstract Objective: The aim of this study was to evaluate the effect of an erbium, chromium: yttrium-scandium-gallium-garnet (Er,Cr:YSGG) laser on the push-out bond strength of RealSeal Self-Etch (SE) sealer. Background data: Various methods are used for smear layer removal in endodontics, such as the application of Er,Cr:YSGG lasers. This laser system may influence the bond strength of resin-based sealers. Methods: Sixty single-rooted extracted teeth were selected. After root canal preparation, samples were divided into two experimental groups and one positive control group (n=20 per group). In group 1, the smear layer was removed by irrigation with ethylenediaminetetraacetic acid (EDTA) and sodium hypochlorite (NaOCl). In group 2, the smear layer was removed using a 2.78 μm Er,Cr:YSGG laser with radial firing tips (RFT3) (parameters: 1.5W, 140 μs, 20 Hz, and 15% water to 15% air ratio), moving at 2 mm/sec in an apico-coronal direction. Group 3 served as a positive control group. Five specimens from each group were selected for scanning electron microscope (SEM) observation. The remaining 45 roots were obturated with RealSeal SE/Resilon and subjected to push-out tests. Data were analyzed using one way analysis of variance (ANOVA) and Tamhane's test. Results: The results showed no significant difference between push-out bond strength of root canal fillings in the EDTA+NaOCl group and the 1.5W laser group (p>0.05). The positive control group showed the lowest push-out bond strength. Conclusions: The results of the present study indicate that the application of an Er,Cr:YSGG laser with radial firing tips did not adversely affect the push-out bond strength of RealSeal SE sealer to dentin. PMID:24206400

  1. Direct photo-etching of poly(methyl methacrylate) using focused extreme ultraviolet radiation from a table-top laser-induced plasma source

    SciTech Connect

    Barkusky, Frank; Peth, Christian; Bayer, Armin; Mann, Klaus

    2007-06-15

    In order to perform material interaction studies with intense extreme ultraviolet (EUV) radiation, a Schwarzschild mirror objective coated with Mo/Si multilayers was adapted to a compact laser-based EUV plasma source (pulse energy 3 mJ at {lambda}=13.5 nm, plasma diameter {approx}300 {mu}m). By 10x demagnified imaging of the plasma a pulse energy density of {approx}75 mJ/cm{sup 2} at a pulse length of 6 ns can be achieved in the image plane of the objective. As demonstrated for poly(methyl methacrylate) (PMMA), photoetching of polymer surfaces is possible at this EUV fluence level. This paper presents first results, including a systematic determination of PMMA etching rates under EUV irradiation. Furthermore, the contribution of out-of-band radiation to the surface etching of PMMA was investigated by conducting a diffraction experiment for spectral discrimination from higher wavelength radiation. Imaging of a pinhole positioned behind the plasma accomplished the generation of an EUV spot of 1 {mu}m diameter, which was employed for direct writing of surface structures in PMMA.

  2. Surface characterizations of laser modified biomedical grade NiTi shape memory alloys.

    PubMed

    Pequegnat, A; Michael, A; Wang, J; Lian, K; Zhou, Y; Khan, M I

    2015-05-01

    Laser processing of shape memory alloys (SMAs) promises to enable the multifunctional capabilities needed for medical device applications. Prior to clinical implementation, the surface characterisation of laser processed SMA is essential in order to understand any adverse biological interaction that may occur. The current study systematically investigated two Ni-49.8 at.% Ti SMA laser processed surface finishes, including as-processed and polished, while comparing them to a chemically etched parent material. Spectrographic characterisation of the surface included; X-ray photoelectron spectroscopy (XPS), auger electron spectroscopy (AES), and Raman spectroscopy. Corrosion performance and Ni ion release were also assessed using potentiodynamic cyclic polarization testing and inductively coupled plasma optical emission spectroscopy (ICP-OES), respectively. Results showed that surface defects, including increased roughness, crystallinity and presence of volatile oxide species, overshadowed any possible performance improvements from an increased Ti/Ni ratio or inclusion dissolution imparted by laser processing. However, post-laser process mechanical polishing was shown to remove these defects and restore the performance, making it comparable to chemically etched NiTi material.

  3. High yield fabrication of low threshold single-mode GaAs/AlGaAs semiconductor ring lasers using metallic etch masks.

    PubMed

    Dutta, Neilanjan; Murakowski, Janusz A; Shi, Shouyuan; Prather, Dennis W

    2010-05-24

    We demonstrate a novel high yield fabrication process for single-mode ridge-waveguide GaAs/AlGaAs ring lasers with significantly lower threshold currents than previously reported for similar devices. In this fabrication process, the ridge waveguide structure is patterned using a metallic etch mask, which survives ensuing fabrication steps to form a continuous metallic cover over the entire resonator structure. This metallic cover improves the uniformity of electrical contact between the resonator structure and the metallic biasing layer deposited at the conclusion of the fabrication process. This leads to optimum electrical pumping of the fabricated devices. This fabrication process also allows for the passivation of the ridge-waveguide device sidewalls and separation of the metallic biasing layer from the optical mode.

  4. Widely tunable (PbSn)Te lasers using etched cavities for mass production. [for infrared spectroscopic applications

    NASA Technical Reports Server (NTRS)

    Miller, M. D.

    1980-01-01

    Lead salt diode lasers are being used increasingly as tunable sources of monochromatic infrared radiation in a variety of spectroscopic systems. These devices are particularly useful, both in the laboratory and in the field, because of their high spectral brightness (compared to thermal sources) and wide spectral coverage (compared to line-tunable gas lasers). While the primary commercial application of these lasers has been for ultrahigh resolution laboratory spectroscopy, there are numerous systems applications, including laser absorbtion pollution monitors and laser heterodyne radiometers, for which diode lasers have great potential utility. Problem areas related to the wider use of these components are identified. Among these are total tuning range, mode control, and high fabrication cost. A fabrication technique which specifically addresses the problems of tuning range and cost, and which also has potential application for mode control, is reported.

  5. Lateral electrochemical etching of III-nitride materials for microfabrication

    DOEpatents

    Han, Jung

    2017-02-28

    Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

  6. Excimer laser ablation of thick SiOx-films: Etch rate measurements and simulation of the ablation threshold

    NASA Astrophysics Data System (ADS)

    Ihlemann, J.; Meinertz, J.; Danev, G.

    2012-08-01

    Excimer laser ablation of 4.5 μm thick SiOx-films with x ≈ 1 is investigated at 193 nm, 248 nm, and 308 nm. Strong absorption enables precisely tunable removal depths. The ablation rates correlate with laser penetration depths calculated from low level absorption coefficients. The experimental ablation thresholds are in agreement with numerical simulations on the basis of linear absorption and one-dimensional heat flow. This behaviour is similar to that of strongly UV-absorbing polymers, leading to well controllable micro machining prospects. After laser processing, SiOx can be converted to SiO2, opening a route to laser based fabrication of micro optical components.

  7. Characteristics of the Fiber Laser Sensor System Based on Etched-Bragg Grating Sensing Probe for Determination of the Low Nitrate Concentration in Water

    PubMed Central

    Pham, Thanh Binh; Bui, Huy; Le, Huu Thang; Pham, Van Hoi

    2016-01-01

    The necessity of environmental protection has stimulated the development of many kinds of methods allowing the determination of different pollutants in the natural environment, including methods for determining nitrate in source water. In this paper, the characteristics of an etched fiber Bragg grating (e-FBG) sensing probe—which integrated in fiber laser structure—are studied by numerical simulation and experiment. The proposed sensor is demonstrated for determination of the low nitrate concentration in a water environment. Experimental results show that this sensor could determine nitrate in water samples at a low concentration range of 0–80 ppm with good repeatability, rapid response, and average sensitivity of 3.5 × 10−3 nm/ppm with the detection limit of 3 ppm. The e-FBG sensing probe integrated in fiber laser demonstrates many advantages, such as a high resolution for wavelength shift identification, high optical signal-to-noise ratio (OSNR of 40 dB), narrow bandwidth of 0.02 nm that enhanced accuracy and precision of wavelength peak measurement, and capability for optical remote sensing. The obtained results suggested that the proposed e-FBG sensor has a large potential for the determination of low nitrate concentrations in water in outdoor field work. PMID:28025512

  8. Characteristics of the Fiber Laser Sensor System Based on Etched-Bragg Grating Sensing Probe for Determination of the Low Nitrate Concentration in Water.

    PubMed

    Pham, Thanh Binh; Bui, Huy; Le, Huu Thang; Pham, Van Hoi

    2016-12-22

    The necessity of environmental protection has stimulated the development of many kinds of methods allowing the determination of different pollutants in the natural environment, including methods for determining nitrate in source water. In this paper, the characteristics of an etched fiber Bragg grating (e-FBG) sensing probe-which integrated in fiber laser structure-are studied by numerical simulation and experiment. The proposed sensor is demonstrated for determination of the low nitrate concentration in a water environment. Experimental results show that this sensor could determine nitrate in water samples at a low concentration range of 0-80 ppm with good repeatability, rapid response, and average sensitivity of 3.5 × 10(-3) nm/ppm with the detection limit of 3 ppm. The e-FBG sensing probe integrated in fiber laser demonstrates many advantages, such as a high resolution for wavelength shift identification, high optical signal-to-noise ratio (OSNR of 40 dB), narrow bandwidth of 0.02 nm that enhanced accuracy and precision of wavelength peak measurement, and capability for optical remote sensing. The obtained results suggested that the proposed e-FBG sensor has a large potential for the determination of low nitrate concentrations in water in outdoor field work.

  9. Nanoporous GaN-Ag composite materials prepared by metal-assisted electroless etching for direct laser desorption-ionization mass spectrometry.

    PubMed

    Nie, Bei; Duan, Barrett K; Bohn, Paul W

    2013-07-10

    Three-dimensional nanoporous gallium nitride(PGaN) produced by metal-assisted electroless etching is chemically embedded with silver nanoparticles via electroless deposition, forming a metallized semiconductor membrane with large surface area and nanoscale metal features. A new application utilizing the unique chemical and morphological features of these composite nanostructures is described here, laser induced desorption-ionization(LDI) of biomolecules(e.g., cholesterol and nucleotides) for direct mass analysis, without use of additional organic matrix. Although PGaN itself is a poor matrix for direct LDI mass spectrometry, the combination of Ag and PGaN greatly improves ion signals relative to PGaN or Ag nanostructure surfaces alone. This behavior is attributed to the combination of strong UV absorption, enhanced surface area, and favorable thermal properties of PGaN. Importantly, Ag-PGaN is shown to facilitate the formation of Ag adduct ions in some cases, for example adenine, where adducts are not observed from either porous anodic aluminum membranes or surfaces presenting Ag nanoparticles in isolation. Nanopore-embedded Ag nanostructures serve a dual role: as cationization agents and to assist thermal desorption under UV laser irradiation. The results reported here suggest that the combination of Ag nanostructures embedded in PGaN has the capacity for high quality matrix-free LDI mass analysis.

  10. Etching of glass microchips with supercritical water.

    PubMed

    Karásek, Pavel; Grym, Jakub; Roth, Michal; Planeta, Josef; Foret, František

    2015-01-07

    A novel method of etching channels in glass microchips with the most tunable solvent, water, was tested as an alternative to common hydrogen fluoride-containing etchants. The etching properties of water strongly depend on temperature and pressure, especially in the vicinity of the water critical point. The chips were etched at the subcritical, supercritical and critical temperature of water, and the resulting channel shape, width, depth and surface morphology were studied by scanning electron microscopy and 3D laser profilometry. Channels etched with the hot water were compared with the chips etched with standard hydrogen fluoride-containing solution. Depending on the water pressure and temperature, the silicate dissolved from the glass could be re-deposited on the channel surface. This interesting phenomenon is described together with the conditions necessary for its utilization. The results illustrate the versatility of pure water as a glass etching and surface morphing agent.

  11. Dry etching method for compound semiconductors

    DOEpatents

    Shul, R.J.; Constantine, C.

    1997-04-29

    A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

  12. Dry etching method for compound semiconductors

    SciTech Connect

    Shul, Randy J.; Constantine, Christopher

    1997-01-01

    A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

  13. An investigation of phase transformation and crystallinity in laser surface modified H13 steel

    NASA Astrophysics Data System (ADS)

    Aqida, S. N.; Brabazon, D.; Naher, S.

    2013-03-01

    This paper presents a laser surface modification process of AISI H13 tool steel using 0.09, 0.2 and 0.4 mm size of laser spot with an aim to increase hardness properties. A Rofin DC-015 diffusion-cooled CO2 slab laser was used to process AISI H13 tool steel samples. Samples of 10 mm diameter were sectioned to 100 mm length in order to process a predefined circumferential area. The parameters selected for examination were laser peak power, overlap percentage and pulse repetition frequency (PRF). X-ray diffraction analysis (XRD) was conducted to measure crystallinity of the laser-modified surface. X-ray diffraction patterns of the samples were recorded using a Bruker D8 XRD system with Cu K α ( λ=1.5405 Å) radiation. The diffraction patterns were recorded in the 2 θ range of 20 to 80°. The hardness properties were tested at 981 mN force. The laser-modified surface exhibited reduced crystallinity compared to the un-processed samples. The presence of martensitic phase was detected in the samples processed using 0.4 mm spot size. Though there was reduced crystallinity, a high hardness was measured in the laser-modified surface. Hardness was increased more than 2.5 times compared to the as-received samples. These findings reveal the phase source of the hardening mechanism and grain composition in the laser-modified surface.

  14. Metal etching composition

    NASA Technical Reports Server (NTRS)

    Otousa, Joseph E. (Inventor); Thomas, Clark S. (Inventor); Foster, Robert E. (Inventor)

    1991-01-01

    The present invention is directed to a chemical etching composition for etching metals or metallic alloys. The composition includes a solution of hydrochloric acid, phosphoric acid, ethylene glycol, and an oxidizing agent. The etching composition is particularly useful for etching metal surfaces in preparation for subsequent fluorescent penetrant inspection.

  15. Dry etching of metallization

    NASA Technical Reports Server (NTRS)

    Bollinger, D.

    1983-01-01

    The production dry etch processes are reviewed from the perspective of microelectronic fabrication applications. The major dry etch processes used in the fabrication of microelectronic devices can be divided into two categories - plasma processes in which samples are directly exposed to an electrical discharge, and ion beam processes in which samples are etched by a beam of ions extracted from a discharge. The plasma etch processes can be distinguished by the degree to which ion bombardment contributes to the etch process. This, in turn is related to capability for anisotropic etching. Reactive Ion Etching (RIE) and Ion Beam Etching are of most interest for etching of thin film metals. RIE is generally considered the best process for large volume, anisotropic aluminum etching.

  16. Laser-modified nanostructures of PET films and cell behavior.

    PubMed

    Mirzadeh, Hamid; Moghadam, Ehsan Vahedi; Mivehchi, Houri

    2011-07-01

    The surface of polyethylene terephthalate (PET) films was irradiated using KrF excimer laser (λ = 248 nm) with different number of pulses at constant repetition rate. The adhesion behavior of L-929 fibroblast cells on the irradiated surface was investigated. The changes in films' morphology were characterized by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The hydrophilicity and both polar and dispersion components of the surface tension of the treated films were evaluated by contact angle and surface tension measurement techniques. The films roughness was evaluated by atomic force microscopy. AFM and SEM observations showed that a specific nanostructure was created on the laser-treated polyethylene terephthalate surface. Contact angle and surface energy measurements have indicated an increase in wettability of the laser treated samples up to 5 pulses as optimum result; while, by increasing the laser pulses beyond 5 pulses the hydrophilicity of laser treated samples dropped and the surface energy of the treated films was leveled off. Data from in vitro assays showed significant cell attachment and cell growth onto laser treated samples in comparison with the untreated films. Moreover, a number of fibroblast cells attached and proliferated onto treated PET films were achieved under optimum condition of 5 pulses which was significantly higher than the other treated samples.

  17. Evaluation of modifying the bonding protocol of a new acid-etch primer on the shear bond strength of orthodontic brackets.

    PubMed

    Ajlouni, Raed; Bishara, Samir E; Oonsombat, Charuphan; Denehy, Gerald E

    2004-06-01

    The purpose of the study was to evaluate the shear bond strength of orthodontic brackets when light curing both the self-etch primer and the adhesive in one step. Fourty eight teeth were bonded with self-etch primer Angel I (3M/ESPE, St Paul, Minn) and divided into three groups. In group I (control), 16 teeth were stored in deionized water for 24 hours before debonding. In group II, 16 teeth were debonded within half-an-hour to simulate when the initial archwires were ligated. In group III, 16 additional teeth were bonded using exactly the same procedure as in groups I and II, but the light cure used for 10 seconds after applying the acid-etch primer was eliminated, and the light cure used for 20 seconds after the precoated bracket was placed over the tooth. This saved at least two minutes of the total time of the bonding procedure. The teeth in this group were also debonded within half-an-hour from the time of initial bonding. The teeth debonded after 24 hours of water storage at 37 degrees C had a mean shear bond strength of 6.0 +/- 3.5 MPa, the group that was debonded within half-an-hour of two light exposures had a mean shear bond strength of 5.9 +/- 2.7 MPa, and the mean for the group with only one light cure exposure was 4.3 +/- 2.6 MPa. Light curing the acid-etch primer together with the adhesive after placing the orthodontic bracket did not significantly diminish the shear bond strength as compared with light curing the acid-etch primer and the adhesive separately.

  18. Designing a Broadband Pump for High-Quality Micro-Lasers via Modified Net Radiation Method

    NASA Astrophysics Data System (ADS)

    Nechayev, Sergey; Reusswig, Philip D.; Baldo, Marc A.; Rotschild, Carmel

    2016-12-01

    High-quality micro-lasers are key ingredients in non-linear optics, communication, sensing and low-threshold solar-pumped lasers. However, such micro-lasers exhibit negligible absorption of free-space broadband pump light. Recently, this limitation was lifted by cascade energy transfer, in which the absorption and quality factor are modulated with wavelength, enabling non-resonant pumping of high-quality micro-lasers and solar-pumped laser to operate at record low solar concentration. Here, we present a generic theoretical framework for modeling the absorption, emission and energy transfer of incoherent radiation between cascade sensitizer and laser gain media. Our model is based on linear equations of the modified net radiation method and is therefore robust, fast converging and has low complexity. We apply this formalism to compute the optimal parameters of low-threshold solar-pumped lasers. It is revealed that the interplay between the absorption and self-absorption of such lasers defines the optimal pump absorption below the maximal value, which is in contrast to conventional lasers for which full pump absorption is desired. Numerical results are compared to experimental data on a sensitized Nd3+:YAG cavity, and quantitative agreement with theoretical models is found. Our work modularizes the gain and sensitizing components and paves the way for the optimal design of broadband-pumped high-quality micro-lasers and efficient solar-pumped lasers.

  19. Designing a Broadband Pump for High-Quality Micro-Lasers via Modified Net Radiation Method.

    PubMed

    Nechayev, Sergey; Reusswig, Philip D; Baldo, Marc A; Rotschild, Carmel

    2016-12-07

    High-quality micro-lasers are key ingredients in non-linear optics, communication, sensing and low-threshold solar-pumped lasers. However, such micro-lasers exhibit negligible absorption of free-space broadband pump light. Recently, this limitation was lifted by cascade energy transfer, in which the absorption and quality factor are modulated with wavelength, enabling non-resonant pumping of high-quality micro-lasers and solar-pumped laser to operate at record low solar concentration. Here, we present a generic theoretical framework for modeling the absorption, emission and energy transfer of incoherent radiation between cascade sensitizer and laser gain media. Our model is based on linear equations of the modified net radiation method and is therefore robust, fast converging and has low complexity. We apply this formalism to compute the optimal parameters of low-threshold solar-pumped lasers. It is revealed that the interplay between the absorption and self-absorption of such lasers defines the optimal pump absorption below the maximal value, which is in contrast to conventional lasers for which full pump absorption is desired. Numerical results are compared to experimental data on a sensitized Nd(3+):YAG cavity, and quantitative agreement with theoretical models is found. Our work modularizes the gain and sensitizing components and paves the way for the optimal design of broadband-pumped high-quality micro-lasers and efficient solar-pumped lasers.

  20. Designing a Broadband Pump for High-Quality Micro-Lasers via Modified Net Radiation Method

    PubMed Central

    Nechayev, Sergey; Reusswig, Philip D.; Baldo, Marc A.; Rotschild, Carmel

    2016-01-01

    High-quality micro-lasers are key ingredients in non-linear optics, communication, sensing and low-threshold solar-pumped lasers. However, such micro-lasers exhibit negligible absorption of free-space broadband pump light. Recently, this limitation was lifted by cascade energy transfer, in which the absorption and quality factor are modulated with wavelength, enabling non-resonant pumping of high-quality micro-lasers and solar-pumped laser to operate at record low solar concentration. Here, we present a generic theoretical framework for modeling the absorption, emission and energy transfer of incoherent radiation between cascade sensitizer and laser gain media. Our model is based on linear equations of the modified net radiation method and is therefore robust, fast converging and has low complexity. We apply this formalism to compute the optimal parameters of low-threshold solar-pumped lasers. It is revealed that the interplay between the absorption and self-absorption of such lasers defines the optimal pump absorption below the maximal value, which is in contrast to conventional lasers for which full pump absorption is desired. Numerical results are compared to experimental data on a sensitized Nd3+:YAG cavity, and quantitative agreement with theoretical models is found. Our work modularizes the gain and sensitizing components and paves the way for the optimal design of broadband-pumped high-quality micro-lasers and efficient solar-pumped lasers. PMID:27924844

  1. Modified trocar with laser diode for instrument guidance.

    PubMed

    Rajab, Taufiek Konrad

    2013-12-01

    Laparoscopic instruments that are newly inserted into trocars are initially outside the surgeon's endoscopic field of view. This can make it difficult to accurately position the instrument at the operative site and presents a potential risk to patients since the tip of the instrument could potentially perforate organs and blood vessels while it is advanced blindly. To solve this problem, I have designed a trocar that incorporates a laser pointer to guide laparoscopic instruments while they are outside the endoscopic field of view. The laser dot is projected along the long axis of the trocar. This allows the surgeon to instantly determine the direction and target of the introduced instrument. Furthermore, the projected laser dot serves as evidence of an unobstructed path from the trocar to the target. This modification improves safety in laparoscopic surgery.

  2. Using femtosecond lasers to modify sizes of gold nanoparticles

    NASA Astrophysics Data System (ADS)

    da Silva Cordeiro, Thiago; Almeida de Matos, Ricardo; Silva, Flávia Rodrigues de Oliveira; Vieira, Nilson D.; Courrol, Lilia C.; Samad, Ricardo E.

    2016-04-01

    Metallic nanoparticles are important on several scientific, medical and industrial areas. The control of nanoparticles characteristics has fundamental importance to increase the efficiency on the processes and applications in which they are employed. The metallic nanoparticles present specific surface plasmon resonances (SPR). These resonances are related with the collective oscillations of the electrons presents on the metallic nanoparticle. The SPR is determined by the potential defined by the nanoparticle size and geometry. There are several methods of producing gold nanoparticles, including the use of toxic chemical polymers. We already reported the use of natural polymers, as for example, the agar-agar, to produce metallic nanoparticles under xenon lamp irradiation. This technique is characterized as a "green" synthesis because the natural polymers are inoffensive to the environment. We report a technique to produce metallic nanoparticles and change its geometrical and dimensional characteristics using a femtosecond laser. The 1 ml initial solution was irradiate using a laser beam with 380 mW, 1 kHz and 40 nm of bandwidth centered at 800 nm. The setup uses an Acousto-optic modulator, Dazzler, to change the pulses spectral profiles by introduction of several orders of phase, resulting in different temporal energy distributions. The use of Dazzler has the objective of change the gold nanoparticles average size by the changing of temporal energy distributions of the laser pulses incident in the sample. After the laser irradiation, the gold nanoparticles average diameter were less than 15 nm.

  3. Laser welding and post weld treatment of modified 9Cr-1MoVNb steel.

    SciTech Connect

    Xu, Z.

    2012-04-03

    Laser welding and post weld laser treatment of modified 9Cr-1MoVNb steels (Grade P91) were performed in this preliminary study to investigate the feasibility of using laser welding process as a potential alternative to arc welding methods for solving the Type IV cracking problem in P91 steel welds. The mechanical and metallurgical testing of the pulsed Nd:YAG laser-welded samples shows the following conclusions: (1) both bead-on-plate and circumferential butt welds made by a pulsed Nd:YAG laser show good welds that are free of microcracks and porosity. The narrow heat affected zone has a homogeneous grain structure without conventional soft hardness zone where the Type IV cracking occurs in conventional arc welds. (2) The laser weld tests also show that the same laser welder has the potential to be used as a multi-function tool for weld surface remelting, glazing or post weld tempering to reduce the weld surface defects and to increase the cracking resistance and toughness of the welds. (3) The Vicker hardness of laser welds in the weld and heat affected zone was 420-500 HV with peak hardness in the HAZ compared to 240 HV of base metal. Post weld laser treatment was able to slightly reduce the peak hardness and smooth the hardness profile, but failed to bring the hardness down to below 300 HV due to insufficient time at temperature and too fast cooling rate after the time. Though optimal hardness of weld made by laser is to be determined for best weld strength, methods to achieve the post weld laser treatment temperature, time at the temperature and slow cooling rate need to be developed. (4) Mechanical testing of the laser weld and post weld laser treated samples need to be performed to evaluate the effects of laser post treatments such as surface remelting, glazing, re-hardening, or tempering on the strength of the welds.

  4. New Etch Monitoring Technique

    NASA Astrophysics Data System (ADS)

    Kaiser, Christina; Adamcyk, Martin; Levy, Yuval; Tiedje, Tom; Young, Jeff F.; Kelson, Itzhak

    2000-05-01

    Plasma etching is an important tool for the development of various types of nanostructures. The development of specific plasma etching procedures is often time-consuming. We will describe an new technique for IN-SITU monitoring of the etch rate and sidewall profile of 1D GRATINGS in a remote plasma etcher. The technique involves monitoring the energy loss of alpha particles that propagate through the layer being etched. Samples to be etched are impregnated by a thin near-surface layer of 224Ra nuclei that decay by alpha particle emission. The energy spectrum of the alpha particles is acquired at intervals in the etch process. The etch rate on flat surfaces can be determined quite simply by measuring the change in the peak energy of the transmitted particles. By using a simple geometric model that employs the Bethe Bloch formula for energy loss of charges particles the etch profile of masked samples can also be inferred.

  5. Feasibility of atomic layer etching of polymer material based on sequential O{sub 2} exposure and Ar low-pressure plasma-etching

    SciTech Connect

    Vogli, Evelina; Metzler, Dominik; Oehrlein, Gottlieb S.

    2013-06-24

    We describe controlled, self-limited etching of a polystyrene polymer using a composite etching cycle consisting of sequential deposition of a thin reactive layer from precursors produced from a polymer-coated electrode within the etching chamber, modification using O{sub 2} exposure, and subsequent low-pressure Ar plasma etching, which removes the oxygen-modified deposited reactive layer along with Almost-Equal-To 0.1 nm unmodified polymer. Deposition prevents net etching of the unmodified polymer during the etching step and enables self-limited etch rates of 0.1 nm/cycle.

  6. Alkaline etch system qualification

    SciTech Connect

    Goldammer, S.E.; Pemberton, S.E.; Tucker, D.R.

    1997-04-01

    Based on the data from this qualification activity, the Atotech etch system, even with minimum characterization, was capable of etching production printed circuit products as good as those from the Chemcut system. Further characterization of the Atotech system will improve its etching capability. In addition to the improved etch quality expected from further characterization, the Atotech etch system has additional features that help reduce waste and provide for better consistency in the etching process. The programmable logic controller and computer will allow operators to operate the system manually or from pre-established recipes. The evidence and capabilities of the Atotech system made it as good as or better than the Chemcut system for etching WR products. The Printed Wiring Board Engineering Department recommended that the Atotech system be released for production. In December 1995, the Atotech system was formerly qualified for production.

  7. Thermal Conductivity Based on Modified Laser Flash Measurement

    NASA Technical Reports Server (NTRS)

    Lin, Bochuan; Ban, Heng; Li, Chao; Scripa, Rosalia N.; Su, Ching-Hua; Lehoczky, Sandor L.

    2005-01-01

    The laser flash method is a standard method for thermal diffusivity measurement. It employs single-pulse heating of one side of a thin specimen and measures the temperature response of the other side. The thermal diffusivity of the specimen can be obtained based on a one-dimensional transient heat transfer analysis. This paper reports the development of a theory that includes a transparent reference layer with known thermal property attached to the back of sample. With the inclusion of heat conduction from the sample to the reference layer in the theoretical analysis, the thermal conductivity and thermal diffusivity of sample can be extracted from the temperature response data. Furthermore, a procedure is established to select two points from the data to calculate these properties. The uncertainty analysis indicates that this method can be used with acceptable levels of uncertainty.

  8. On the modified active region design of interband cascade lasers

    SciTech Connect

    Motyka, M.; Ryczko, K.; Dyksik, M.; Sęk, G.; Misiewicz, J.; Weih, R.; Dallner, M.; Kamp, M.; Höfling, S.

    2015-02-28

    Type II InAs/GaInSb quantum wells (QWs) grown on GaSb or InAs substrates and designed to be integrated in the active region of interband cascade lasers (ICLs) emitting in the mid infrared have been investigated. Optical spectroscopy, combined with band structure calculations, has been used to probe their electronic properties. A design with multiple InAs QWs has been compared with the more common double W-shaped QW and it has been demonstrated that it allows red shifting the emission wavelength and enhancing the transition oscillator strength. This can be beneficial for the improvements of the ICLs performances, especially when considering their long-wavelength operation.

  9. Solid state dye lasers based on LDS 698 doped in modified polymethyl methacrylate.

    PubMed

    Fan, Rongwei; Xia, Yuanqin; Chen, Deying

    2008-06-23

    Broad band solid state dye lasers based on LDS 698 doped in modified polymethyl methacrylate (MPMMA) with laser wavelength about 650 nm were demonstrated. It was demonstrated that the fluorescence spectra of LDS 698 in solid host MPMMA displays an obvious blue shift about 50 nm comparing with that in ethanol solution. The dye concentration has great effect on the laser's performance including laser slope efficiency and lifetime. The lifetime increased dramatically with the increase of the LDS 698 concentration. With pump repetition rate of 10 Hz and intensity of 0.1 J/cm(2), the maximum lifetime 300,000 shots corresponding normalized photostability 102 GJ/mol was obtained with LDS 698 at 1.5 x 10(-4)mol/L.

  10. Wear rate control of peek surfaces modified by femtosecond laser

    NASA Astrophysics Data System (ADS)

    Hammouti, S.; Pascale-Hamri, A.; Faure, N.; Beaugiraud, B.; Guibert, M.; Mauclair, C.; Benayoun, S.; Valette, S.

    2015-12-01

    This paper presents the effect of laser texturing on the tribological properties of PEEK surfaces under a ball-on-flat contact configuration. Thus, surfaces with circular dimples of various diameters and depth were created. Tests were conducted with a normal load of 5 N and a sliding velocity of 0.01 m s-1, using bovine calf serum at 37.5 °C as a lubricant. The tribological conditions including the sliding frequency and the lubricant viscosity indicate that tests were performed under boundary lubrication regime. Results showed that discs with higher dimple depth exhibited higher friction coefficient and caused more abrasive wear on the ball specimen. Nevertheless, tribosystems (ball and disc) with dimpled disc surfaces showed a higher wear resistance. In the frame of our experiments, wear rates obtained for tribosystems including dimpled surfaces were 10 times lower than tribosystems including limited patterned or untextured surfaces. Applications such as design of spinal implants may be concerned by such a surface treatment to increase wear resistance of components.

  11. Chemical etching of zinc oxide for thin-film silicon solar cells.

    PubMed

    Hüpkes, Jürgen; Owen, Jorj I; Pust, Sascha E; Bunte, Eerke

    2012-01-16

    Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a certain threshold, that is defined by the deposition conditions and etching solution. Additionally, several approaches to modify the etching behavior through special preparation and etching steps are provided.

  12. Raman study of TiO2 coatings modified by UV pulsed laser

    NASA Astrophysics Data System (ADS)

    Belka, Radosław; Keczkowska, Justyna; Sek, Piotr

    2016-12-01

    The TiO2 coatings were prepared by simple sol-gel method and modified by UV pulsed laser. TiO2, also know as titania, is a ceramic compound, existing in numerous polymorphic forms, mainly as tetragonal rutile and anatase, and rhomboidal brookite. Rutile is the most stable form of titanium dioxide, whereas anatase is a metastable form, created in lower temperatures than rutile. Anatase is marked with higher specific surface area, porosity and a higher number of surface hydroxyl groups as compared to rutile. The unique optical and electronic properties of TiO2 results in its use as semiconductors dielectric mirrors, sunscreen and UV-blocking pigments and especially as photocatalyst. In this paper, the tetraisopropoxide was used as Ti precursor according to sol-gel method. An organic base was applied during sol preparation. Prepared gel was coated on glass substrates and calcined in low temperature to obtain amorphous phase of titania. Prepared coatings were modified by UV picosecond pulse laser with different pulse repetition rate and pulse power. Physical modification of the coatings using laser pulses was intended in order change the phase content of the produced material. Raman spectroscopy (RS) method was applied to studies of modified coatings as it is one of the basic analytical techniques, supporting the identification of compounds and obtaining information about the structure. Especially, RS is a useful method for distinguishing the anatase and rutile phases. In these studies, anatase to rutile transformation was observed, depending on laser parameters.

  13. Single beam determination of porosity and etch rate in situ during etching of porous silicon

    NASA Astrophysics Data System (ADS)

    Foss, S. E.; Kan, P. Y. Y.; Finstad, T. G.

    2005-06-01

    A laser reflection method has been developed and tested for analyzing the etching of porous silicon (PS) films. It allows in situ measurement and analysis of the time dependency of the etch rate, the thickness, the average porosity, the porosity profile, and the interface roughness. The interaction of an infrared laser beam with a layered system consisting of a PS layer and a substrate during etching results in interferences in the reflected beam which is analyzed by the short-time Fourier transform. This method is used for analysis of samples prepared with etching solutions containing different concentrations of HF and glycerol and at different current densities and temperatures. Variations in the etch rate and porosity during etching are observed, which are important effects to account for when optical elements in PS are made. The method enables feedback control of the etching so that PS films with a well-controlled porosity are obtainable. By using different beam diameters it is possible to probe interface roughness at different length scales. Obtained porosity, thickness, and roughness values are in agreement with values measured with standard methods.

  14. Surface engineering of SiC via sublimation etching

    NASA Astrophysics Data System (ADS)

    Jokubavicius, Valdas; Yazdi, Gholam R.; Ivanov, Ivan G.; Niu, Yuran; Zakharov, Alexei; Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa

    2016-12-01

    We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10-5 mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

  15. Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

    SciTech Connect

    Posseme, N. Pollet, O.; Barnola, S.

    2014-08-04

    Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ions implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6 A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.

  16. Preparation of platinum modified titanium dioxide nanoparticles with the use of laser ablation in water.

    PubMed

    Siuzdak, K; Sawczak, M; Klein, M; Nowaczyk, G; Jurga, S; Cenian, A

    2014-08-07

    We report on the preparation method of nanocrystalline titanium dioxide modified with platinum by using nanosecond laser ablation in liquid (LAL). Titania in the form of anatase crystals has been prepared in a two-stage process. Initially, irradiation by laser beam of a titanium metal plate fixed in a glass container filled with deionized water was conducted. After that, the ablation process was continued, with the use of a platinum target placed in a freshly obtained titania colloid. In this work, characterization of the obtained nanoparticles, based on spectroscopic techniques--Raman, X-ray photoelectron and UV-vis reflectance spectroscopy--is given. High resolution transmission electron microscopy was used to describe particle morphology. On the basis of photocatalytic studies we observed the rate of degradation process of methylene blue (MB) (a model organic pollution) in the presence of Pt modified titania in comparison to pure TiO2--as a reference case. Physical and chemical mechanisms of the formation of platinum modified titania are also discussed here. Stable colloidal suspensions containing Pt modified titanium dioxide crystalline anatase particles show an almost perfect spherical shape with diameters ranging from 5 to 30 nm. The TiO2 nanoparticles decorated with platinum exhibit much higher (up to 30%) photocatalytic activity towards the degradation of MB under UV illumination than pure titania.

  17. In vitro mesenchymal stem cell response to a CO2 laser modified polymeric material.

    PubMed

    Waugh, D G; Hussain, I; Lawrence, J; Smith, G C; Cosgrove, D; Toccaceli, C

    2016-10-01

    With an ageing world population it is becoming significantly apparent that there is a need to produce implants and platforms to manipulate stem cell growth on a pharmaceutical scale. This is needed to meet the socio-economic demands of many countries worldwide. This paper details one of the first ever studies in to the manipulation of stem cell growth on CO2 laser surface treated nylon 6,6 highlighting its potential as an inexpensive platform to manipulate stem cell growth on a pharmaceutical scale. Through CO2 laser surface treatment discrete changes to the surfaces were made. That is, the surface roughness of the nylon 6,6 was increased by up to 4.3μm, the contact angle was modulated by up to 5° and the surface oxygen content increased by up to 1atom %. Following mesenchymal stem cell growth on the laser treated samples, it was identified that CO2 laser surface treatment gave rise to an enhanced response with an increase in viable cell count of up to 60,000cells/ml when compared to the as-received sample. The effect of surface parameters modified by the CO2 laser surface treatment on the mesenchymal stem cell response is also discussed along with potential trends that could be identified to govern the mesenchymal stem cell response.

  18. Simulation of Plasma Etching

    NASA Astrophysics Data System (ADS)

    Moroz, Paul; Moroz, Daniel

    2016-09-01

    Plasma is an indispensable tool in materials processing. It provides chemically and physically active species and directional flows of energetic species enabling deep etching with good straight profiles required by the industry. At present time, the only feasible methods of simulating the resulting feature profiles are those which fall within the scope of feature-scale (FS) simulation methods, utilizing engineering-type of reactions of incoming species with solid materials. At the same time, the molecule dynamics (MD) methods are emerging as an important alternative approach to simulating extremely small features with sizes below of a few nanometers. In our presentation, we discuss both FS methods implemented into the FPS3D code and MD methods implemented into the MDSS code. We also discuss the ways of extracting information about the reactions and interactions used in FS codes from the MD simulations utilizing the approach of interatomic potentials. For this presentation, we selected two types of simulation cases for etching. The first type considers simulation of mostly etching and implantation, such as during Si etching by chlorine-argon plasma. The second type considers ALE (atomic layer etch) when etching is done by a cyclic process of surface passivation/activation with the following process of etching/removal of a single atomic layer per cycle or per a few cycles, allowing ultimate processing accuracy. The simulations are carried out with both FS and MD codes to provide the data for relation and comparison between those two very different approaches.

  19. Anisotropic etching of silicon in solutions containing tensioactive compounds

    NASA Astrophysics Data System (ADS)

    Zubel, Irena

    2016-12-01

    The results of investigations concerning anisotropic etching in 3M KOH and 25% TMAH solutions modified by tensioactive compounds such as alcohols, diols and a typical surfactant Triton X100 have been compared. Etching anisotropy was assessed on the basis of etch rates ratio V(110)/V(100). It was stated that the relation between surface tension of the solutions and etch rates of particular planes depend not only on the kind of surfactant but also on the kind of etching solution (KOH, TMAH). It points out an important role of TMA+ ions in the etching process, probably in the process of forming an adsorption layer, consisting of the molecules of tensioactive compounds on Si surface, which decides about etch rate. We have observed that this phenomenon occurs only at high concentration of TMA+ ions (25% TMAH). Reduction of TMAH concentration changes the properties of surfactant containing TMAH solutions. From all investigated solutions, the solutions that assured developing of (110) plane inclined at the angle of 45° to (100) substrate were selected. Such planes can be used as micromirrors in MOEMS structures. The solutions provide the etch rate ratio V(110)/V(100)<0.7, thus they were selected from hydroxide solutions containing surfactants. A simple way for etch rate anisotropy V(110)/V(100) assessment based on microscopic images etched structures has been proposed.

  20. Thermal Property Measurement of Semiconductor Melt using Modified Laser Flash Method

    NASA Technical Reports Server (NTRS)

    Lin, Bochuan; Zhu, Shen; Ban, Heng; Li, Chao; Scripa, Rosalla N.; Su, Ching-Hua; Lehoczky, Sandor L.

    2003-01-01

    This study further developed standard laser flash method to measure multiple thermal properties of semiconductor melts. The modified method can determine thermal diffusivity, thermal conductivity, and specific heat capacity of the melt simultaneously. The transient heat transfer process in the melt and its quartz container was numerically studied in detail. A fitting procedure based on numerical simulation results and the least root-mean-square error fitting to the experimental data was used to extract the values of specific heat capacity, thermal conductivity and thermal diffusivity. This modified method is a step forward from the standard laser flash method, which is usually used to measure thermal diffusivity of solids. The result for tellurium (Te) at 873 K: specific heat capacity 300.2 Joules per kilogram K, thermal conductivity 3.50 Watts per meter K, thermal diffusivity 2.04 x 10(exp -6) square meters per second, are within the range reported in literature. The uncertainty analysis showed the quantitative effect of sample geometry, transient temperature measured, and the energy of the laser pulse.

  1. The processes of modified microareas formation in the bulk of porous glasses by laser radiation

    NASA Astrophysics Data System (ADS)

    Kostyuk, G. K.; Sergeev, M. M.; Yakovlev, E. B.

    2015-06-01

    The possibility of the formation of modified microareas (MAs) with changed optical properties in the bulk of porous glasses (PGs) with laser radiation is investigated. A laser module of continuous action with wavelength λ = 800 nm and power P = 120 mW was used as the source of radiation. The material used in the experiment was PG of 94.73 SiO2-4.97 B2O3-0.30 Na2O. A model that describes the processes taking place under laser radiation that lead to a modification of the glass is proposed. Our evaluation results based on experimental data are given. The results of an additional PG plate of the same composition impregnated with glycerol—a substance with a high degree of polarizability—during exposure experiments are also given. A fiber laser of continuous action with wavelength λ = 1070 nm and power P = 16.5 W was used as a source of radiation.

  2. Modified Laser Flash Method for Thermal Properties Measurements and the Influence of Heat Convection

    NASA Technical Reports Server (NTRS)

    Lin, Bochuan; Zhu, Shen; Ban, Heng; Li, Chao; Scripa, Rosalia N.; Su, Ching-Hua; Lehoczky, Sandor L.

    2003-01-01

    The study examined the effect of natural convection in applying the modified laser flash method to measure thermal properties of semiconductor melts. Common laser flash method uses a laser pulse to heat one side of a thin circular sample and measures the temperature response of the other side. Thermal diffusivity can be calculations based on a heat conduction analysis. For semiconductor melt, the sample is contained in a specially designed quartz cell with optical windows on both sides. When laser heats the vertical melt surface, the resulting natural convection can introduce errors in calculation based on heat conduction model alone. The effect of natural convection was studied by CFD simulations with experimental verification by temperature measurement. The CFD results indicated that natural convection would decrease the time needed for the rear side to reach its peak temperature, and also decrease the peak temperature slightly in our experimental configuration. Using the experimental data, the calculation using only heat conduction model resulted in a thermal diffusivity value is about 7.7% lower than that from the model with natural convection. Specific heat capacity was about the same, and the difference is within 1.6%, regardless of heat transfer models.

  3. Laser spot tracking based on modified circular Hough transform and motion pattern analysis.

    PubMed

    Krstinić, Damir; Skelin, Ana Kuzmanić; Milatić, Ivan

    2014-10-27

    Laser pointers are one of the most widely used interactive and pointing devices in different human-computer interaction systems. Existing approaches to vision-based laser spot tracking are designed for controlled indoor environments with the main assumption that the laser spot is very bright, if not the brightest, spot in images. In this work, we are interested in developing a method for an outdoor, open-space environment, which could be implemented on embedded devices with limited computational resources. Under these circumstances, none of the assumptions of existing methods for laser spot tracking can be applied, yet a novel and fast method with robust performance is required. Throughout the paper, we will propose and evaluate an efficient method based on modified circular Hough transform and Lucas-Kanade motion analysis. Encouraging results on a representative dataset demonstrate the potential of our method in an uncontrolled outdoor environment, while achieving maximal accuracy indoors. Our dataset and ground truth data are made publicly available for further development.

  4. Laser Spot Tracking Based on Modified Circular Hough Transform and Motion Pattern Analysis

    PubMed Central

    Krstinić, Damir; Skelin, Ana Kuzmanić; Milatić, Ivan

    2014-01-01

    Laser pointers are one of the most widely used interactive and pointing devices in different human-computer interaction systems. Existing approaches to vision-based laser spot tracking are designed for controlled indoor environments with the main assumption that the laser spot is very bright, if not the brightest, spot in images. In this work, we are interested in developing a method for an outdoor, open-space environment, which could be implemented on embedded devices with limited computational resources. Under these circumstances, none of the assumptions of existing methods for laser spot tracking can be applied, yet a novel and fast method with robust performance is required. Throughout the paper, we will propose and evaluate an efficient method based on modified circular Hough transform and Lucas–Kanade motion analysis. Encouraging results on a representative dataset demonstrate the potential of our method in an uncontrolled outdoor environment, while achieving maximal accuracy indoors. Our dataset and ground truth data are made publicly available for further development. PMID:25350502

  5. Femtosecond laser fabrication of nanostructures in silica glass.

    PubMed

    Taylor, R S; Hnatovsky, C; Simova, E; Rayner, D M; Bhardwaj, V R; Corkum, P B

    2003-06-15

    A femtosecond laser beam focused inside fused silica and other glasses can modify the refractive index of the glass. Chemical etching and atomic-force microscope studies show that the modified region can have a sharp-tipped cone-shaped structure with a tip diameter as small as 100 nm. Placing the structure near the bottom surface of a silica glass sample and applying a selective chemical etch to the bottom surface produces clean, circular, submicrometer-diameter holes. Holes spaced as close to one another as 1.4 microm are demonstrated.

  6. Extreme ultraviolet lithography mask etch study and overview

    NASA Astrophysics Data System (ADS)

    Wu, Banqiu; Kumar, Ajay; Chandrachood, Madhavi; Sabharwal, Amitabh

    2013-04-01

    An overview of extreme ultraviolet lithography (EUVL) mask etch is presented and a EUVL mask etch study was carried out. Today, EUVL implementation has three critical challenges that hinder its adoption: extreme ultraviolet (EUV) source power, resist resolution-line width roughness-sensitivity, and a qualified EUVL mask. The EUVL mask defect challenges result from defects generated during blank preparation, absorber and multilayer deposition processes, as well as patterning, etching and wet clean processes. Stringent control on several performance criteria including critical dimension (CD) uniformity, etch bias, micro-loading, profile control, defect control, and high etch selectivity requirement to capping layer is required during the resist pattern duplication on the underlying absorber layer. EUVL mask absorbers comprise of mainly tantalum-based materials rather than chrome- or MoSi-based materials used in standard optical masks. Compared to the conventional chrome-based absorbers and phase shift materials, tantalum-based absorbers need high ion energy to obtain moderate etch rates. However, high ion energy may lower resist selectivity, and could introduce defects. Current EUVL mask consists of an anti-reflective layer on top of the bulk absorber. Recent studies indicate that a native oxide layer would suffice as an anti-reflective coating layer during the electron beam inspection. The absorber thickness and the material properties are optimized based on optical density targets for the mask as well as electromagnetic field effects and optics requirements of the patterning tools. EUVL mask etch processes are modified according to the structure of the absorber, its material, and thickness. However, etch product volatility is the fundamental requirement. Overlapping lithographic exposure near chip border may require etching through the multilayer, resulting in challenges in profile control and etch selectivity. Optical proximity correction is applied to further

  7. Photoresist 3D profile related etch process simulation and its application to full chip etch compact modeling

    NASA Astrophysics Data System (ADS)

    Wu, Cheng-En; Yang, Wayne; Luan, Lan; Song, Hua

    2015-03-01

    The optical proximity correction (OPC) model and post-OPC verification that takes the developed photoresist (PR) 3D profile into account is needed in the advanced 2Xnm node. The etch process hotspots caused by poor resist profile may not be fully identified during the lithography inspection but will only be observed after the subsequent etch process. A complete mask correction that targets to final etch CD requires not only a lithography R3D profile model but also a etch process compact model. The drawback of existing etch model is to treat the etch CD bias as a function of visibility and pattern density which do not contain the information of resist profile. One important factor to affect the etch CD is the PR lateral erosion during the etch process due to non-vertical PR side wall angle (SWA) and anisotropy of etch plasma source. A simple example is in transferring patterns from PR layer to thin hard mask (HM) layer, which is frequently used in the double pattern (DPT) process. The PR lateral erosion contributes an extra HM etch CD bias which is deviated from PR CD defined by lithography process. This CD bias is found to have a nontrivial dependency on the PR profile and cannot be described by the pattern density or visibility. In this report, we study the etch CD variation to resist SWA under various etch conditions. Physical effects during etch process such as plasma ion reflection and source anisotropy, which modify the local etch rate, are taken into considerations in simulation. The virtual data are generated by Synopsys TCAD tool Sentaurus Topography 3D using Monte Carlo engine. A simple geometry compact model is applied first to explain the behavior of virtual data, however, it works to some extent but lacks accuracy when plasma ion reflection comes into play. A modified version is proposed, for the first time, by including the effects of plasma ion reflection and source anisotropy. The new compact model fits the nonlinear etch CD bias very well for a wide

  8. Modified form of laser-induced interstitial thermotherapy (LITT) for the treatment of tumors

    NASA Astrophysics Data System (ADS)

    Chapman, Roxana

    1999-01-01

    LITT has been used for the treatment of benign and malignant tumors since 1983. In all cases the laser fiber/s have been arranged at or near the center of the lesion and the duration of treatment, or fiber tip type, modified in an attempt to destroy the whole tumor. During the last 8 years the author has treated 344 symptomatic patients with more than 1,400 benign uterine leiomyomas by LITT. The first 50 cases were treated traditionally with the fibers directed towards the center of the tumor. Six cases subsequently required second stage LITT and four failed and required hysterectomy. The remaining patients were either treated by directing the laser fibers towards the periphery, where feasible, or throughout the tumor in parallel 3 cm apart. The latter achieved columns of coagulated tissue 5 mm in diameter an strips of healthy tissue between, which subsequently died from tissue anoxia because blood vessels had been coagulated. Research showed that any remaining tissue was deprived of enzymes, hormone receptors and epidermal growth factor and, therefore, did not grow. It is concluded that with malignant tumors cure rather than palliation might be achieved if the laser fibers were directed towards the periphery where the blood vessels enter, and that the surrounding healthy tissue be sacrificed for about 1 cm to destroy micro-invaded tissue and tumor cells within lymphatics.

  9. Laser Modified ZnO/CdSSe Core-Shell Nanowire Arrays for Micro-Steganography and Improved Photoconduction

    NASA Astrophysics Data System (ADS)

    Lu, Junpeng; Liu, Hongwei; Zheng, Minrui; Zhang, Hongji; Lim, Sharon Xiaodai; Tok, Eng Soon; Sow, Chorng Haur

    2014-09-01

    Arrays of ZnO/CdSSe core/shell nanowires with shells of tunable band gaps represent a class of interesting hybrid nanomaterials with unique optical and photoelectrical properties due to their type II heterojunctions and chemical compositions. In this work, we demonstrate that direct focused laser beam irradiation is able to achieve localized modification of the hybrid structure and chemical composition of the nanowire arrays. As a result, the photoresponsivity of the laser modified hybrid is improved by a factor of ~3. A 3D photodetector with improved performance is demonstrated using laser modified nanowire arrays overlaid with monolayer graphene as the top electrode. Finally, by controlling the power of the scanning focused laser beam, micropatterns with different fluorescence emissions are created on a substrate covered with nanowire arrays. Such a pattern is not apparent when imaged under normal optical microscopy but the pattern becomes readily revealed under fluorescence microscopy i.e. a form of Micro-Steganography is achieved.

  10. Laser modified ZnO/CdSSe core-shell nanowire arrays for Micro-Steganography and improved photoconduction.

    PubMed

    Lu, Junpeng; Liu, Hongwei; Zheng, Minrui; Zhang, Hongji; Lim, Sharon Xiaodai; Tok, Eng Soon; Sow, Chorng Haur

    2014-09-12

    Arrays of ZnO/CdSSe core/shell nanowires with shells of tunable band gaps represent a class of interesting hybrid nanomaterials with unique optical and photoelectrical properties due to their type II heterojunctions and chemical compositions. In this work, we demonstrate that direct focused laser beam irradiation is able to achieve localized modification of the hybrid structure and chemical composition of the nanowire arrays. As a result, the photoresponsivity of the laser modified hybrid is improved by a factor of ~3. A 3D photodetector with improved performance is demonstrated using laser modified nanowire arrays overlaid with monolayer graphene as the top electrode. Finally, by controlling the power of the scanning focused laser beam, micropatterns with different fluorescence emissions are created on a substrate covered with nanowire arrays. Such a pattern is not apparent when imaged under normal optical microscopy but the pattern becomes readily revealed under fluorescence microscopy i.e. a form of Micro-Steganography is achieved.

  11. Ion beam sputter etching

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.

    1986-01-01

    An ion beam etching process which forms extremely high aspect ratio surface microstructures using thin sputter masks is utilized in the fabrication of integrated circuits. A carbon rich sputter mask together with unmasked portions of a substrate is bombarded with inert gas ions while simultaneous carbon deposition occurs. The arrival of the carbon deposit is adjusted to enable the sputter mask to have a near zero or even slightly positive increase in thickness with time while the unmasked portions have a high net sputter etch rate.

  12. The structure and photoconductivity of SiGe/Si epitaxial layers modified by single-pulse laser radiation

    NASA Astrophysics Data System (ADS)

    Ivlev, G. D.; Kazuchits, N. M.; Prakopyeu, S. L.; Rusetsky, M. S.; Gaiduk, P. I.

    2014-12-01

    The effect of nanosecond pulses of ruby laser radiation on the structural state and morphology of the epitaxial layers of a SiO0.5Ge0.5 solid solution on silicon with the initiation of a crystal-melt phase transition has been studied by electron microscopy. Data on the photoelectric parameters of the laser-modified layers having a cellular structure owing to the segregation of germanium during the solidification of the binary melt have been derived.

  13. Optical properties of micromachined polysilicon reflective surfaces with etching holes

    NASA Astrophysics Data System (ADS)

    Zou, Jun; Byrne, Colin; Liu, Chang; Brady, David J.

    1998-08-01

    MUMPS (Multi-User MEMS Process) is receiving increasingly wide use in micro optics. We have investigated the optical properties of the polysilicon reflective surface in a typical MUMPS chip within the visible light spectrum. The effect of etching holes on the reflected laser beam is studied. The reflectivity and diffraction patterns at five different wavelengths have been measured. The optical properties of the polysilicon reflective surface are greatly affected by the surface roughness, the etching holes, as well as the material. The etching holes contribute to diffraction and reduction of reflectivity. This study provides a basis for optimal design of micromachined free-space optical systems.

  14. Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

    DOEpatents

    Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

    2016-03-01

    Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

  15. Plasma etching of cavities into diamond anvils for experiments at high pressures and high temperatures

    SciTech Connect

    Weir, S.T.; Cynn, H.; Falabella, S.; Evans, W.J.; Aracne-Ruddle, C.; Farber, D.; Vohra, Y.K.

    2012-10-23

    We describe a method for precisely etching small cavities into the culets of diamond anvils for the purpose of providing thermal insulation for samples in experiments at high pressures and high temperatures. The cavities were fabricated using highly directional oxygen plasma to reactively etch into the diamond surface. The lateral extent of the etch was precisely controlled to micron accuracy by etching the diamond through a lithographically fabricated tungsten mask. The performance of the etched cavities in high-temperature experiments in which the samples were either laser heated or electrically heated is discussed.

  16. Comparison of Modified-ETDRS and Mild Macular Grid Laser Photocoagulation Strategies for Diabetic Macular Edema

    PubMed Central

    2008-01-01

    Purpose To compare two laser photocoagulation techniques for treatment of diabetic macular edema (DME): modified-ETDRS direct/grid photocoagulation (mETDRS) and a, potentially milder, but potentially more extensive, mild macular grid (MMG) laser technique in which small mild burns are placed throughout the macula, whether or not edema is present, and microaneurysms are not treated directly. Methods 263 subjects (mean age 59 years) with previously untreated DME were randomly assigned to receive laser photocoagulation by mETDRS (N=162 eyes) or MMG (N=161 eyes) technique. Visual acuity, fundus photographs and OCT measurements were obtained at baseline and after 3.5, 8, and 12 months. Treatment was repeated if DME persisted. Main Outcome Measure Change in OCT measures at 12-months follow up. Results From baseline to 12 months, among eyes with baseline central subfield thickness ≥ 250 microns, central subfield thickening decreased by an average of 88 microns in the mETDRS group and decreased by 49 microns in the MMG group (adjusted mean difference: 33 microns, 95% confidence interval 5 to 61 microns, P=0.02). Weighted inner zone thickening by OCT decreased by 42 and 28 microns, respectively (adjusted mean difference: 14 microns, 95% confidence interval 1 to 27 microns, P=0.04), maximum retinal thickening (maximum of the central and four inner subfields) decreased by 66 and 39 microns, respectively (adjusted mean difference: 27 microns, 95% confidence interval 6 to 47 microns, P=0.01), and retinal volume decreased by 0.8 and 0.4 mm3, respectively (adjusted mean difference: 0.3 mm3, 95% confidence interval 0.02 to 0.53 mm3, P=0.03). At 12 months, the mean change in visual acuity was 0 letters in the mETDRS group and 2 letters worse in the MMG group (adjusted mean difference: 2 letters, 95% confidence interval −0.5 to 5 letters, P=0.10). Conclusions At 12 months after treatment, the MMG technique is less effective at reducing OCT measured retinal thickening than the

  17. Comparison of silanization/hydrosilation and organosilanization modification procedures on etched capillaries for electrokinetic chromatography.

    PubMed

    Matyska, Maria T; Pesek, Joseph J

    2005-06-24

    Etched capillaries for use in open tubular electrochromatography are modified by silanization/hydrosilation and organosilanization. The migration behavior of both types of capillaries is evaluated with small basic molecules, peptides and proteins. Comparisons of peak symmetry and efficiency are used to measure the effectiveness of the two methods for modifying the etched surface. From this information, the suitability of each method for use with etched capillaries can be determined.

  18. Chemical downstream etching of tungsten

    SciTech Connect

    Blain, M.G.; Jarecki, R.L.; Simonson, R.J.

    1998-07-01

    The downstream etching of tungsten and tungsten oxide has been investigated. Etching of chemical vapor deposited tungsten and e-beam deposited tungsten oxide samples was performed using atomic fluorine generated by a microwave discharge of argon and NF{sub 3}. Etching was found to be highly activated with activation energies approximated to be 6.0{plus_minus}0.5thinspkcal/mol and 5.4{plus_minus}0.4thinspkcal/mol for W and WO{sub 3}, respectively. In the case of F etching of tungsten, the addition of undischarged nitric oxide (NO) directly into the reaction chamber results in the competing effects of catalytic etch rate enhancement and the formation of a nearly stoichiometric WO{sub 3} passivating tungsten oxide film, which ultimately stops the etching process. For F etching of tungsten oxide, the introduction of downstream NO reduces the etch rate. {copyright} {ital 1998 American Vacuum Society.}

  19. Anisotropic Ta{sub 2}O{sub 5} waveguide etching using inductively coupled plasma etching

    SciTech Connect

    Muttalib, Muhammad Firdaus A. Chen, Ruiqi Y.; Pearce, Stuart J.; Charlton, Martin D. B.

    2014-07-01

    Smooth and vertical sidewall profiles are required to create low loss rib and ridge waveguides for integrated optical device and solid state laser applications. In this work, inductively coupled plasma (ICP) etching processes are developed to produce high quality low loss tantalum pentoxide (Ta{sub 2}O{sub 5}) waveguides. A mixture of C{sub 4}F{sub 8} and O{sub 2} gas are used in combination with chromium (Cr) hard mask for this purpose. In this paper, the authors make a detailed investigation of the etch process parameter window. Effects of process parameters such as ICP power, platen power, gas flow, and chamber pressure on etch rate and sidewall slope angle are investigated. Chamber pressure is found to be a particularly important factor, which can be used to tune the sidewall slope angle and so prevent undercut.

  20. Comparative analysis of root surface smear layer removal by different etching modalities or erbium:yttrium-aluminum-garnet laser irradiation. A scanning electron microscopy study.

    PubMed

    Theodoro, Letícia Helena; Zezell, Denise Maria; Garcia, Valdir Gouveia; Haypek, Patrícia; Nagata, Maria José Hitomi; de Almeida, Juliano Milanezi; de Paula Eduardo, Carlos

    2010-07-01

    The purpose of this study was to evaluate the effect of erbium:yttrium-aluminum-garnet (Er:YAG) laser (2.94 mum) irradiation on the removal of root surface smear layer of extracted human teeth and to compare its efficacy with that of citric acid, ethylenediamine tetra-acetic acid (EDTA), or a gel containing a mixture of tetracycline hydrochloride (HCl) and citric acid, using scanning electron microscopy (SEM). Thirty human dentin specimens were randomly divided into six groups: G1 (control group), irrigated with 10 ml of physiologic saline solution; G2, conditioned with 24% citric acid gel; G3, conditioned with 24% EDTA gel; G4, conditioned with a 50% citric acid and tetracycline gel; G5, irradiated with Er:YAG laser (47 mJ/10 Hz/5.8 J/cm(2)/pulse); G6, irradiated with Er:YAG laser (83 mJ/10 Hz/10.3 J/cm(2)/pulse). Electron micrographs were obtained and analyzed according to a rating system. Statistical analysis was conducted with Kruskal-Wallis and Mann-Whitney tests (P < 0.05). G1 was statistically different from all the other groups; no statistically significant differences were observed between the Er:YAG laser groups and those undergoing the other treatment modalities. When the two Er:YAG laser groups were compared, the fluency of G6 was statistically more effective in smear layer removal than the one used in G5 (Mann-Whitney test, P < 0.01). Root surfaces irradiated by Er:YAG laser had more irregular contours than those treated by chemical agents. It can be concluded that all treatment modalities were effective in smear layer removal. The results of our study suggest that the Er:YAG laser can be safely used to condition diseased root surfaces effectively. Furthermore, the effect of Er:YAG laser irradiation on root surfaces should be evaluated in vivo so that its potential to enhance the healing of periodontal tissues can be assessed.

  1. Microstructure and properties of borocarburized and laser-modified 17CrNi6-6 steel

    NASA Astrophysics Data System (ADS)

    Kulka, M.; Makuch, N.; Pertek, A.; Piasecki, A.

    2012-06-01

    Two-step process: carburizing followed by boriding was applied to the formation of borocarburized layers. The boride layer formed on the substrate of changeable chemical and phase composition (e.g. borocarburized layer) was called "gradient boride layer", in contrast to "typical boride layer", formed on the substrate of constant chemical and phase composition. Until now, the typical heat treatment of borocarburized layer consisted of treatment through hardening: quenching in oil and low-temperature tempering. In this paper, instead of treatment through hardening, laser-heat treatment was employed. The properties of such layer were compared to the properties of typical carburized layer. Three zones characterized the microstructure of laser-modified borocarburized layer: iron borides (FeB+Fe 2B) of modified morphology, hardened carburized zone (heat affected zone) and carburized layer without heat treatment. X-ray microanalysis indicated the increased boron concentration close to the surface due to the occurrence of a mixture of FeB and Fe 2B borides. Near to the hardened carburized zone, Fe 2B phase occurred in the laser-modified boride zone. Laser-heat treated borocarburized layer was characterized by higher microhardness at the surface than that obtained in case of carburized layer. It was caused by the iron borides (FeB+Fe 2B) occurrence at the surface, as a consequence of boriding process. However, the carburized layer was characterized by considerably larger hardened zone. Higher abrasive wear resistance, but lower low-cycle fatigue strength in comparison with the carburized layer, characterized the gradient boride layer formed by borocarburizing and laser surface modification. The indentation craters obtained on the surface of laser-heat treated borocarburized layer revealed sufficient cohesion (HF3 standard). The use of laser-modified borocarburized layers may be advantageous under conditions of high abrasive wear of mating parts. In case of parts, which

  2. Bioactive coating on titanium implants modified by Nd:YVO4 laser

    NASA Astrophysics Data System (ADS)

    Filho, Edson de Almeida; Fraga, Alexandre F.; Bini, Rafael A.; Guastaldi, Antonio C.

    2011-03-01

    Apatite coating was applied on titanium surfaces modified by Nd:YVO4 laser ablations with different energy densities (fluency) at ambient pressure and atmosphere. The apatites were deposited by biomimetic method using a simulated body fluid solution that simulates the salt concentration of bodily fluids. The titanium surfaces submitted to the fast melting and solidification processes (ablation) were immersed in the simulated body fluid solution for four days. The samples were divided into two groups, one underwent heat treatment at 600 °C and the other dried at 37 °C. For the samples treated thermally the diffractograms showed the formation of a phase mixture, with the presence of the hydroxyapatite, tricalcium phosphate, calcium deficient hydroxyapatite, carbonated hydroxyapatite and octacalcium phosphate phases. For the samples dried only the formation of the octacalcium phosphate and hydroxyapatite phases was verified. The infrared spectra show bands relative to chemical bonds confirmed by the diffraction analyses. The coating of both the samples with and without heat treatment present dense morphology and made up of a clustering of spherical particles ranging from 5 to 20 μm. Based on the results we infer that the modification of implant surfaces employing laser ablations leads to the formation of oxides that help the formation of hydroxyapatite without the need of a heat treatment.

  3. A Comparative Study of Microleakage on Dental Surfaces Bonded with Three Self-Etch Adhesive Systems Treated with the Er:YAG Laser and Bur.

    PubMed

    Sanhadji El Haddar, Youssef; Cetik, Sibel; Bahrami, Babak; Atash, Ramin

    2016-01-01

    Aim. This study sought to compare the microleakage of three adhesive systems in the context of Erbium-YAG laser and diamond bur cavity procedures. Cavities were restored with composite resin. Materials and Methods. Standardized Class V cavities were performed in 72 extracted human teeth by means of diamond burs or Er-YAG laser. The samples were randomly divided into six groups of 12, testing three adhesive systems (Clearfil s(3) Bond Plus, Xeno® Select, and Futurabond U) for each method used. Cavities were restored with composite resin before thermocycling (methylene blue 2%, 24 h). The slices were prepared using a microtome. Optical microscope photography was employed to measure the penetration. Results. No statistically significant differences in microleakage were found in the use of bur or laser, nor between adhesive systems. Only statistically significant values were observed comparing enamel with cervical walls (p < 0.001). Conclusion. It can be concluded that the Er:YAG laser is as efficient as diamond bur concerning microleakage values in adhesive restoration procedures, thus constituting an alternative tool for tooth preparation.

  4. A Comparative Study of Microleakage on Dental Surfaces Bonded with Three Self-Etch Adhesive Systems Treated with the Er:YAG Laser and Bur

    PubMed Central

    Sanhadji El Haddar, Youssef; Cetik, Sibel; Bahrami, Babak; Atash, Ramin

    2016-01-01

    Aim. This study sought to compare the microleakage of three adhesive systems in the context of Erbium-YAG laser and diamond bur cavity procedures. Cavities were restored with composite resin. Materials and Methods. Standardized Class V cavities were performed in 72 extracted human teeth by means of diamond burs or Er-YAG laser. The samples were randomly divided into six groups of 12, testing three adhesive systems (Clearfil s3 Bond Plus, Xeno® Select, and Futurabond U) for each method used. Cavities were restored with composite resin before thermocycling (methylene blue 2%, 24 h). The slices were prepared using a microtome. Optical microscope photography was employed to measure the penetration. Results. No statistically significant differences in microleakage were found in the use of bur or laser, nor between adhesive systems. Only statistically significant values were observed comparing enamel with cervical walls (p < 0.001). Conclusion. It can be concluded that the Er:YAG laser is as efficient as diamond bur concerning microleakage values in adhesive restoration procedures, thus constituting an alternative tool for tooth preparation. PMID:27419128

  5. Digital Photonic Production of Micro Structures in Glass by In-Volume Selective Laser-Induced Etching using a High Speed Micro Scanner

    NASA Astrophysics Data System (ADS)

    Gottmann, Jens; Hermans, Martin; Ortmann, Jürgen

    Digital photonic production of 3D microfluidic devices and assembled micro mechanics inside fused silica glass is carried out using ISLE directly from digital CAD data. To exploit the potential productivity of new high average power fs-lasers >150 W a modular high speed scanning system has been developed. Acousto-optical beam deflection, galvo-scanners and translation stages are controlled by CAM software. Using a lens with 10 mm focal length a focus radius of 1 μm is scanned with a velocity of 12 m/s on 400 μm track radius enabling the up-scaling of the ISLE- process using fs-laser radiation with up to 30 W.

  6. Dry etching technologies for the advanced binary film

    NASA Astrophysics Data System (ADS)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

    2011-11-01

    ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

  7. Laser micromachining of chemically altered polymers

    SciTech Connect

    Lippert, T.

    1998-08-01

    During the last decade laser processing of polymers has become an important field of applied and fundamental research. One of the most promising proposals, to use laser ablation as dry etching technique in photolithography, has not yet become an industrial application. Many disadvantages of laser ablation, compared to conventional photolithography, are the result of the use of standard polymers. These polymers are designed for totally different applications, but are compared to the highly specialized photoresist. A new approach to laser polymer ablation will be described; the development of polymers, specially designed for high resolution laser ablation. These polymers have photolabile groups in the polymer backbone, which decompose upon laser irradiation or standard polymers are modified for ablation at a specific irradiation wavelength. The absorption maximum can be tailored for specific laser emissino lines, e.g. 351, 308 and 248 nm lines of excimer lasers. The authors show that with this approach many problems associated with the application of laser ablation for photolithography can be solved. The mechanism of ablation for these photopolymers is photochemical, whereas for most of the standard polymers this mechanism is photothermal. The photochemical decomposition mechanism results in high resolution ablation with no thermal damage at the edges of the etched structures. In addition there are no redeposited ablation products or surface modifications of the polymer after ablation.

  8. Anti-tumor response induced by immunologically modified carbon nanotubes and laser irradiation using rat mammary tumor model

    NASA Astrophysics Data System (ADS)

    Acquaviva, Joseph T.; Hasanjee, Aamr M.; Bahavar, Cody F.; Zhou, Fefian; Liu, Hong; Howard, Eric W.; Bullen, Liz C.; Silvy, Ricardo P.; Chen, Wei R.

    2015-03-01

    Laser immunotherapy (LIT) is being developed as a treatment modality for metastatic cancer which can destroy primary tumors and induce effective systemic anti-tumor responses by using a targeted treatment approach in conjunction with the use of a novel immunoadjuvant, glycated chitosan (GC). In this study, Non-invasive Laser Immunotherapy (NLIT) was used as the primary treatment mode. We incorporated single-walled carbon nanotubes (SWNTs) into the treatment regimen to boost the tumor-killing effect of LIT. SWNTs and GC were conjugated to create a completely novel, immunologically modified carbon nanotube (SWNT-GC). To determine the efficacy of different laser irradiation durations, 5 minutes or 10 minutes, a series of experiments were performed. Rats were inoculated with DMBA-4 cancer cells, a highly aggressive metastatic cancer cell line. Half of the treatment group of rats receiving laser irradiation for 10 minutes survived without primary or metastatic tumors. The treatment group of rats receiving laser irradiation for 5 minutes had no survivors. Thus, Laser+SWNT-GC treatment with 10 minutes of laser irradiation proved to be effective at reducing tumor size and inducing long-term anti-tumor immunity.

  9. Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl{sub 2} ion beam assisted etching

    SciTech Connect

    Anglin, Kevin Goodhue, William D.; Swint, Reuel B.; Porter, Jeanne

    2015-03-15

    A deeply etched, anisotropic 45° and 90° mirror technology is developed for Al{sub x}Ga{sub 1−x}As heterostructures using a Cl{sub 2} ion beam assisted etching system. When etching vertically, using a conductive low-erosion Ni mask, electrochemical etch differences between layers with various Al mole fractions caused nonuniform sidewall profiles not seen in semi-insulating GaAs test samples. These variations, based on alloy composition, were found to be negligible when etching at a 45°. A Si{sub 3}N{sub 4}-Ni etch mask is designed in order to electrically isolate charge buildup caused by the incoming Ar{sup +} ion beam to the Ni layer, preventing conduction to the underlying epitaxial layers. This modification produced smoothly etched facets, up to 8 μm in depth, enabling fabrication of substrate–surface-emitting slab-coupled optical waveguide lasers and other optoelectronic devices.

  10. Optical data recording by laser pulses in liquid-crystal cells with an azo-modified surface

    SciTech Connect

    Serak, S V; Agashkov, A V; Reshetnyak, V Yu

    2001-03-31

    The effect of trans-cis photoisomerisation of azofragments of a polymer film on the molecular reorientation of a liquid crystal is studied. It is shown that, using nanosecond laser pulses, one can perform both the reversible and static data recording in liquid-crystal cells with an azo-modified surface. The rise time of the reorientation is measured by the methods of dynamic holography to be about {approx} 30 {mu}s, and the grating efficiency achieves 15 %. (laser applications and other topics in quantum electronics)

  11. Lasers.

    ERIC Educational Resources Information Center

    Schewe, Phillip F.

    1981-01-01

    Examines the nature of laser light. Topics include: (1) production and characteristics of laser light; (2) nine types of lasers; (3) five laser techniques including holography; (4) laser spectroscopy; and (5) laser fusion and other applications. (SK)

  12. Stability and etching of titanium oxynitride films in hydrogen microwave plasma

    SciTech Connect

    Do Hien; Yen, Tzu-Chun; Chang Li

    2013-07-15

    Epitaxial titanium oxynitride (TiNO) films deposited on MgO by pulsed laser deposition were treated in hydrogen microwave plasma. Scanning electron microscopy and x-ray photoelectron spectroscopy were used to examine the stability and etching of TiNO which strongly depended on hydrogen gas pressure. TiNO was very chemically stable and remained with good crystallinity under hydrogen pressure below 5300 Pa. With increase of pressure, it may lead to the formation of etch pits in inverse pyramid shape. The etch mechanism as well as the effects of gas pressure and etching time are also presented.

  13. Laser Modified ZnO/CdSSe Core-Shell Nanowire Arrays for Micro-Steganography and Improved Photoconduction

    PubMed Central

    Lu, Junpeng; Liu, Hongwei; Zheng, Minrui; Zhang, Hongji; Lim, Sharon Xiaodai; Tok, Eng Soon; Sow, Chorng Haur

    2014-01-01

    Arrays of ZnO/CdSSe core/shell nanowires with shells of tunable band gaps represent a class of interesting hybrid nanomaterials with unique optical and photoelectrical properties due to their type II heterojunctions and chemical compositions. In this work, we demonstrate that direct focused laser beam irradiation is able to achieve localized modification of the hybrid structure and chemical composition of the nanowire arrays. As a result, the photoresponsivity of the laser modified hybrid is improved by a factor of ~3. A 3D photodetector with improved performance is demonstrated using laser modified nanowire arrays overlaid with monolayer graphene as the top electrode. Finally, by controlling the power of the scanning focused laser beam, micropatterns with different fluorescence emissions are created on a substrate covered with nanowire arrays. Such a pattern is not apparent when imaged under normal optical microscopy but the pattern becomes readily revealed under fluorescence microscopy i.e. a form of Micro-Steganography is achieved. PMID:25213321

  14. Individualized Learning Package about Etching.

    ERIC Educational Resources Information Center

    Sauer, Michael J.

    An individualized learning package provides step-by-step instruction in the fundamentals of the etching process. Thirteen specific behavioral objectives are listed. A pretest, consisting of matching 15 etching terms with their definitions, is provided along with an answer key. The remainder of the learning package teaches the 13 steps of the…

  15. Ultrasonic metal etching for metallographic analysis

    NASA Technical Reports Server (NTRS)

    Young, S. G.

    1971-01-01

    Ultrasonic etching delineates microstructural features not discernible in specimens prepared for metallographic analysis by standard chemical etching procedures. Cavitation bubbles in ultrasonically excited water produce preferential damage /etching/ of metallurgical phases or grain boundaries, depending on hardness of metal specimens.

  16. Plasma etching of cesium iodide

    NASA Astrophysics Data System (ADS)

    Yang, X.; Hopwood, J.; Tipnis, S.; Nagarkar, V.; Gaysinskiy, V.

    2002-01-01

    Thick films of cesium iodide (CsI) are often used to convert x-ray images into visible light. Spreading of the visible light within CsI, however, reduces the resolution of the resulting image. Anisotropic etching of the CsI film into an array of micropixels can improve the image resolution by confining light within each pixel. The etching process uses a high-density inductively coupled plasma to pattern CsI samples held by a heated, rf-biased chuck. Fluorine-containing gases such as CF4 are found to enhance the etch rate by an order of magnitude compared to Ar+ sputtering alone. Without inert-gas ion bombardment, however, the CF4 etch becomes self-limited within a few microns of depth due to the blanket deposition of a passivation layer. Using CF4+Ar continuously removes this layer from the lateral surfaces, but the formation of a thick passivation layer on the unbombarded sidewalls of etched features is observed by scanning electron microscopy. At a substrate temperature of 220 °C, the minimum ion-bombardment energy for etching is Ei~50 eV, and the rate depends on Ei1/2 above 65 eV. In dilute mixtures of CF4 and Ar, the etch rate is proportional to the gas-phase density of atomic fluorine. Above 50% CF4, however, the rate decreases, indicating the onset of net surface polymer deposition. These observations suggest that anisotropy is obtained through the ion-enhanced inhibitor etching mechanism. Etching exhibits an Arrhenius-type behavior in which the etch rate increases from ~40 nm/min at 40 °C to 380 nm/min at 330 °C. The temperature dependence corresponds to an activation energy of 0.13+/-0.01 eV. This activation energy is consistent with the electronic sputtering mechanism for alkali halides.

  17. Surface Modification of Nitinol by Chemical and Electrochemical Etching

    NASA Astrophysics Data System (ADS)

    Yang, Zhendi; Wei, Xiaojin; Cao, Peng; Gao, Wei

    2013-07-01

    In this paper, Nitinol, an equiatomic binary alloy of nickel and titanium, was surface modified for its potential biomedical applications by chemical and electrochemical etching. The main objective of the surface modification is to reduce the nickel content on the surface of Nitinol and simultaneously to a rough surface microstructure. As a result, better biocompatibility and better cell attachment would be achieved. The effect of the etching parameters was investigated, using scanning electron microscopy (SEM) equipped with energy dispersive X-ray spectrometry (EDX) and X-ray photoelectron spectrometry (XPS). The corrosion property of modified Nitinol surfaces was investigated by electrochemical work station. After etching, the Ni content in the surface layer has been reduced and the oxidation of Ti has been enhanced.

  18. On the use of CO 2 laser induced surface patterns to modify the wettability of poly(methyl methacrylate) (PMMA)

    NASA Astrophysics Data System (ADS)

    Waugh, David Garreth; Lawrence, Jonathan

    2010-06-01

    CO 2 lasers can be seen to lend themselves to materials processing applications and have been used extensively in both research and industry. This work investigated the surface modification of PMMA with a CO 2 laser in order to vary the wettability characteristics. The wettability characteristics of the PMMA were modified by generating a number of patterns of various topographies on the surface using the CO 2 laser. These induced patterns were trench and hatch with scan dimensions of 50 and 100 μm. Through white light interferometry, it was found that for all laser patterned samples, the surface roughness had significantly increased by up to 3.1 μm. The chemical composition of selected samples was explored using X-ray photoelectron spectroscopy and found that the surface oxygen content had risen by approximately 4 at%. By using a sessile drop device it was found that, in comparison to the as-received sample, 50 μm dimensions gave rise to a more hydrophilic surface; whereas 100 μm dimensions gave rise to either no change in contact angle or an increase making the PMMA hydrophobic. This can be explained by combinations of surface roughness and γp contributing to the observed contact angle, in addition to the possibility of different wetting regimes taking place owed to the variation of topographies over the as-received and laser patterned samples.

  19. Submicron patterned metal hole etching

    DOEpatents

    McCarthy, Anthony M.; Contolini, Robert J.; Liberman, Vladimir; Morse, Jeffrey

    2000-01-01

    A wet chemical process for etching submicron patterned holes in thin metal layers using electrochemical etching with the aid of a wetting agent. In this process, the processed wafer to be etched is immersed in a wetting agent, such as methanol, for a few seconds prior to inserting the processed wafer into an electrochemical etching setup, with the wafer maintained horizontal during transfer to maintain a film of methanol covering the patterned areas. The electrochemical etching setup includes a tube which seals the edges of the wafer preventing loss of the methanol. An electrolyte composed of 4:1 water: sulfuric is poured into the tube and the electrolyte replaces the wetting agent in the patterned holes. A working electrode is attached to a metal layer of the wafer, with reference and counter electrodes inserted in the electrolyte with all electrodes connected to a potentiostat. A single pulse on the counter electrode, such as a 100 ms pulse at +10.2 volts, is used to excite the electrochemical circuit and perform the etch. The process produces uniform etching of the patterned holes in the metal layers, such as chromium and molybdenum of the wafer without adversely effecting the patterned mask.

  20. Water-assisted CO(2) laser ablated glass and modified thermal bonding for capillary-driven bio-fluidic application.

    PubMed

    Chung, C K; Chang, H C; Shih, T R; Lin, S L; Hsiao, E J; Chen, Y S; Chang, E C; Chen, C C; Lin, C C

    2010-02-01

    The glass-based microfluidic chip has widely been applied to the lab-on-a-chip for clotting tests. Here, we have demonstrated a capillary driven flow chip using the water-assisted CO(2) laser ablation for crackless fluidic channels and holes as well as the modified low-temperature glass bonding with assistance of adhesive polymer film at 300 degrees Celsius. Effect of water depth on the laser ablation of glass quality was investigated. The surface hydrophilic property of glass and polymer film was measured by static contact angle method for hydrophilicity examination in comparison with the conventional polydimethylsiloxane (PDMS) material. Both low-viscosity deionized water and high-viscosity whole blood were used for testing the capillary-driving flow behavior. The preliminary coagulation testing in the Y-channel chip was also performed using whole blood and CaCl(2) solution. The water-assisted CO(2) laser processing can cool down glass during ablation for less temperature gradient to eliminate the crack. The modified glass bonding can simplify the conventional complex fabrication procedure of glass chips, such as high-temperature bonding, long consuming time and high cost. Moreover, the developed fluidic glass chip has the merit of hydrophilic behavior conquering the problem of traditional hydrophobic recovery of polymer fluidic chips and shows the ability to drive high-viscosity bio-fluids.

  1. Modified Surface Having Low Adhesion Properties to Mitigate Insect Residue Adhesion

    NASA Technical Reports Server (NTRS)

    Wohl, Christopher J., Jr. (Inventor); Smith, Joseph G., Jr. (Inventor); Siochi, Emilie J. (Inventor); Penner, Ronald K. (Inventor)

    2016-01-01

    A process to modify a surface to provide reduced adhesion surface properties to mitigate insect residue adhesion. The surface may include the surface of an article including an aircraft, an automobile, a marine vessel, all-terrain vehicle, wind turbine, helmet, etc. The process includes topographically and chemically modifying the surface by applying a coating comprising a particulate matter, or by applying a coating and also topographically modifying the surface by various methods, including but not limited to, lithographic patterning, laser ablation and chemical etching, physical vapor phase deposition, chemical vapor phase deposition, crystal growth, electrochemical deposition, spin casting, and film casting.

  2. Northern Arabia Etched Terrain

    NASA Technical Reports Server (NTRS)

    2002-01-01

    (Released 23 May 2002) The Science Many places on Mars display scabby, eroded landscapes that commonly are referred to as etched terrain. These places have a ragged, tortured look that reveals a geologic history of intense deposition and erosion. This THEMIS image shows such a place. Here a 10 km diameter crater is superposed on the floor of a 40 km diameter crater, most of which is outside of the image but apparent in the MOLA context image. The rugged crater rim material intermingles with low, flat-topped mesas and layers with irregular outlines along with dune-like ridges on many of the flat surfaces. The horizontal layers that occur throughout the scene at different elevations are evidence of repeated episodes of deposition. The apparent ease with which these deposits have been eroded, most likely by wind, suggests that they are composed of poorly consolidated material. Air-fall sediments are the likely candidate for this material rather than lava flows. The dune-like ridges are probably inactive granule ripples produced from the interaction of wind and erosional debris. The large interior crater displays features that are the result of deposition and subsequent erosion. Its raised rim is barely discernable due to burial while piles and blocks of slumped material along the interior circumference attest to the action of erosion. Some of the blocks retain the same texture as the surrounding undisrupted surface. It appears as if the crater had been buried long enough for the overlying material to be eroded into the texture seen today. Then at some point this overburden foundered and collapsed into the crater. Continuing erosion has caused the upper layer to retreat back from what was probably the original rim of the crater, producing the noncircular appearance seen today. The length of time represented by this sequence of events as well as the conditions necessary to produce them are unknown. The Story Have you ever seen an ink etching, where the artistic cross

  3. Laser hydrothermal reductive ablation of titanium monoxide: Hydrated TiO particles with modified Ti/O surface

    SciTech Connect

    Blazevska-Gilev, Jadranka; Jandova, Vera; Kupcik, Jaroslav; Bastl, Zdenek; Subrt, Jan; Bezdicka, Petr; Pola, Josef

    2013-01-15

    IR laser- and UV laser-induced ablation of titanium monoxide (TM) in hydrogen (50 Torr) is compared to the same process induced in vacuum and shown to result in deposition of hydrated surface modified nanostructured titanium suboxide films. Complementary analyses of the films deposited in vacuum and in hydrogen by Fourier transform infrared, Raman and X-ray photoelectron spectroscopy, X-ray diffraction and electron microscopy allowed to determine different features of both films and propose a mechanism of surface modification of ejected particles, which involves hydrothermal reduction of TM and subsequent reactions of evolved water. The films exert good adhesion to metal and quartz surfaces and are hydrophobic in spite of having their surface coated with adsorbed water. - Graphical abstract: Laser ablation of titanium monoxide (TiO) in hydrogen involves a sequence of H{sub 2} and H{sub 2}O eliminations and additions and yields hydrated amorphous nanostructured titanium suboxide which is richer in oxygen than TiO. Highlights: Black-Right-Pointing-Pointer IR and UV laser ablated particles of titanium monoxide (TiO) undergo amorphization. Black-Right-Pointing-Pointer Films deposited in vacuum have TiO stoichiometry and are oxidized in atmosphere. Black-Right-Pointing-Pointer Films deposited in hydrogen are hydrated and have more O in topmost layers. Black-Right-Pointing-Pointer Films modification in hydrogen is explained by reactions in hydrogen plasma.

  4. Optical properties of carbon nanostructures produced by laser irradiation on chemically modified multi-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Santiago, Enrique Vigueras; López, Susana Hernández; Camacho López, Marco A.; Contreras, Delfino Reyes; Farías-Mancilla, Rurik; Flores-Gallardo, Sergio G.; Hernández-Escobar, Claudia A.; Zaragoza-Contreras, E. Armando

    2016-10-01

    This research focused on the nanosecond (Nd: YAG-1064 nm) laser pulse effect on the optical and morphological properties of chemically modified multi-walled carbon nanotubes (MWCNT). Two suspensions of MWCNT in tetrahydrofuran (THF) were prepared, one was submitted to laser pulses for 10 min while the other (blank) was only mechanically homogenized during the same time. Following the laser irradiation, the suspension acquired a yellow-amber color, in contrast to the black translucent appearance of the blank. UV-vis spectroscopy confirmed this observation, showing the blank a higher absorption. Additionally, photoluminescence measurements exhibited a broad blue-green emission band both in the blank and irradiated suspension when excited at 369 nm, showing the blank a lower intensity. However, a modification in the excitation wavelength produced a violet to green tuning in the irradiated suspension, which did not occur in the blank. Lastly, the electron microscopy analysis of the treated nanotubes showed the abundant formation of amorphous carbon, nanocages, and nanotube unzipping, exhibiting the intense surface modification produced by the laser pulse. Nanotube surface modification and the coexistence with the new carbon nanostructures were considered as the conductive conditions for optical properties modification.

  5. Investigation of impact of photonic crystal fiber structure modified by femtosecond laser micromachining on long period gratings' sensing characteristics

    NASA Astrophysics Data System (ADS)

    Liu, Shujing; Wu, Jingwei; Luo, Mingyan; Ji, Qiang

    2016-02-01

    The sensing characteristics of long period gratings (LPGs) in photonic crystal fiber (PCF) can be changed by using femtosecond laser to modify the PCF waveguide structure although dispersive characteristic plays a key role in determining the sensitivity. Based on the coupled local-mode theory, the coupling behaviors and spectral characteristics of the LPGs in PCF fabricated by a femtosecond laser and a CO2 laser are analyzed which are supported by experiment results. When the distance between the central of fiber core and the peak of the drilled hole, namely the micro-hole diameter is about 3.5 μm, the temperature and strain sensitivities are changed by 27% (from 6.20 to 7.81 pm/°C) and -21% (from -2.41 to -1.91 pm/με) in comparison with the changes of the sensitivities that is induced by CO2 laser. The investigation demonstrates that the local structural changes of PCF have an impact on the sensitivity of LPGs. The investigation demonstrates the versatility of the technique in potential applications to design the desired sensitivity of fiber grating flexibly by forming proper geometrical modulations.

  6. A modified SAG technique for the fabrication of DWDM DFB laser arrays with highly uniform wavelength spacings.

    PubMed

    Zhang, Can; Liang, Song; Zhu, Hongliang; Wang, Baojun; Wang, Wei

    2012-12-31

    A modified selective area growth (SAG) technique, in which the effective index of only the upper separate confinement heterostructure (SCH) layer are modulated to obtain different emission wavelengths, is reported for the fabrication of dense wavelength division multiplexing (DWDM) multi-wavelength laser arrays (MWLAs). InP based 1.5 μm distributed feedback (DFB) laser arrays with 0.8 nm, 0.42 nm, and 0.19 nm channel separations are demonstrated, all showing highly uniform wavelength spacings. The standard deviation of the distribution of the wavelength residues with respect to the corresponding linear fitting values is 0.0672 nm, which is a lot smaller than those of the MWLAs fabricated by other techniques including electron beam lithography. These results indicate that our SAG technique which needs only a simple procedure is promising for the fabrication of low cost DWDM MWLAs.

  7. Between-cycle laser system for depressurization and resealing of modified design nuclear fuel assemblies

    DOEpatents

    Bradley, John G.

    1982-01-01

    A laser beam is used to puncture fuel cladding for release of contained pressurized fission gas from plenum sections or irradiated fuel pins. Exhausted fission gases are collected and trapped for safe disposal. The laser beam, adjusted to welding mode, is subsequently used to reseal the puncture holes. The fuel assembly is returned to additional irradiation or, if at end of reactivity lifetime, is routed to reprocess. The fuel assembly design provides graded cladding lengths, by rows or arrays, such that the cladding of each component fuel element of the assembly is accessible to laser beam reception.

  8. Controlled in situ etch-back

    NASA Technical Reports Server (NTRS)

    Mattauch, R. J.; Seabaugh, A. C. (Inventor)

    1981-01-01

    A controlled in situ etch-back technique is disclosed in which an etch melt and a growth melt are first saturated by a source-seed crystal and thereafter etch-back of a substrate takes place by the slightly undersaturated etch melt, followed by LPE growth of a layer by the growth melt, which is slightly supersaturated.

  9. Etching Of Semiconductor Wafer Edges

    DOEpatents

    Kardauskas, Michael J.; Piwczyk, Bernhard P.

    2003-12-09

    A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.

  10. Channeling and diffusion in dry-etch damage

    NASA Astrophysics Data System (ADS)

    Rahman, M.

    1997-09-01

    At present channeling is accepted to be the primary mechanism causing defects deep within dry-etched material, with diffusion possibly modifying the final defect distribution. In this article detailed analytic expressions are presented incorporating both these mechanisms. The dominant parameter affecting damage depth is found to be the mean channeling length. We show how enhanced diffusion, e.g., by illumination, may increase the observed damage. We also study the effect of damage on depletion depths and suggest how the channeling length may be inferred from the etch-depth dependence of conductance or Raman spectroscopy measurements.

  11. Method of etching zirconium diboride

    SciTech Connect

    Heath, L.S.; Kwiatkowski, B.

    1988-03-31

    The invention described herein may be manufactured, used, and licensed by or for the Government for governmental purposes without the payment to us of any royalty thereon. This invention relates in general to a method of etching, zirconium diboride(ZrB/sub 2/) and, in particular, to a method of dry etching a thin film of ZrB/sub 2/ that has been deposited onto a substrate and patterned using photolithography. U.S. patent application S.N. 156, 124, filed 16 February, 1988, of Linda S. Heath for Method of Etching Titanium Diboride and assigned to a common assignee and with which this application is copending describes and claims a method of etching titanium diboride with a dry etch. Zirconium diboride, like titanium diboride, TiB/sub 2/, has become of interest in laboratory research because of its resistance to change or degradation at high temperatures. By adjusting the process parameters, one is able to attain etch rates of 67 to 140 A/min for ZrB/sub 2/. This is useful for patterning ZrB/sub 2/ as a diffusion barrier or a Schottky contact to semiconductors. The ZrB/sub 2/ film may be on a GaAs substrate.

  12. Structural relaxation phenomena in silicate glasses modified by irradiation with femtosecond laser pulses

    NASA Astrophysics Data System (ADS)

    Seuthe, Thomas; Mermillod-Blondin, Alexandre; Grehn, Moritz; Bonse, Jörn; Wondraczek, Lothar; Eberstein, Markus

    2017-03-01

    Structural relaxation phenomena in binary and multicomponent lithium silicate glasses were studied upon irradiation with femtosecond (fs) laser pulses (800 nm central wavelength, 130 fs pulse duration) and subsequent thermal annealing experiments. Depending on the annealing temperature, micro-Raman spectroscopy analyses evidenced different relaxation behaviours, associated to bridging and non-bridging oxygen structures present in the glass network. The results indicate that the mobility of lithium ions is an important factor during the glass modification with fs-laser pulses. Quantitative phase contrast imaging (spatial light interference microscopy) revealed that these fs-laser induced structural modifications are closely related to local changes in the refractive index of the material. The results establish a promising strategy for tailoring fs-laser sensitivity of glasses through structural mobility.

  13. Performance properties of electro-spark deposited carbide-ceramic coatings modified by laser beam

    NASA Astrophysics Data System (ADS)

    Radek, Norbert; Bartkowiak, Konrad

    The work presented in this paper determines the influence of the laser treatment process on the properties of electrospark coatings. The properties after laser treatment were examined by microstructure analysis, microhardness, roughness and adhesion tests. The studies were conducted using WC-Co-Al2O3 electrodes produced by sintering nanostructural powders. The anti-wear coatings were first deposited by an EIL-8A apparatus on C45 carbon steel and then laser melted within various process parameters. In this case Nd:YAG laser (BLS 720 model) was applied. The electro-spark deposited coatings are very promising to improve abrasive wear resistance of tools and machine parts, which was indicated by tribological tests.

  14. Structural relaxation phenomena in silicate glasses modified by irradiation with femtosecond laser pulses

    PubMed Central

    Seuthe, Thomas; Mermillod-Blondin, Alexandre; Grehn, Moritz; Bonse, Jörn; Wondraczek, Lothar; Eberstein, Markus

    2017-01-01

    Structural relaxation phenomena in binary and multicomponent lithium silicate glasses were studied upon irradiation with femtosecond (fs) laser pulses (800 nm central wavelength, 130 fs pulse duration) and subsequent thermal annealing experiments. Depending on the annealing temperature, micro-Raman spectroscopy analyses evidenced different relaxation behaviours, associated to bridging and non-bridging oxygen structures present in the glass network. The results indicate that the mobility of lithium ions is an important factor during the glass modification with fs-laser pulses. Quantitative phase contrast imaging (spatial light interference microscopy) revealed that these fs-laser induced structural modifications are closely related to local changes in the refractive index of the material. The results establish a promising strategy for tailoring fs-laser sensitivity of glasses through structural mobility. PMID:28266615

  15. Beam-shaping via femtosecond laser-modified optical fibre end faces

    NASA Astrophysics Data System (ADS)

    Ioannou, A.; Polis, M.; Lacraz, A.; Theodosiou, A.; Kalli, K.

    2016-04-01

    We present the results of investigations regarding laser micro-structuring of single mode optical fibres by direct access of the fibre end face and compare this with inscription in planar samples. We combine a high numerical aperture objective and femtosecond laser radiation at visible wavelengths to examine the spatial limits of direct writing and structuring at the surface of the optical fibre. We realise a number of interesting devices from one- and two-dimensional grating structures, to Bessel, Airy and vortex beam generators. We show the versatility of this simple but effective inscription method, where we demonstrate classic multiple slit diffraction patterns and patterns for non-diffracting beams, confirming that the flexible direct write method using femtosecond lasers can be to produce binary masks that can lead to beam shaping using a method that is applicable to all types of planar samples and through fine control of laser parameters to multi-mode and singlemode optical fibres.

  16. Modified diglycol-amides for actinide separation: solvent extraction and time-resolved laser fluorescence spectroscopy complexation studies

    SciTech Connect

    Wilden, A.; Modolo, G.; Lange, S.; Sadowski, F.; Bosbach, D.; Beele, B.B.; Panak, P.J.; Skerencak-Frech, A.; Geist, A.; Iqbal, M.; Verboom, W.

    2013-07-01

    In this work, the back-bone of the diglycolamide-structure of the TODGA extractant was modified by adding one or two methyl groups to the central methylene carbon-atoms. The influence of these structural modifications on the extraction behavior of trivalent actinides and lanthanides and other fission products was studied in solvent extraction experiments. The addition of methyl groups to the central methylene carbon atoms leads to reduced distribution ratios, also for Sr(II). This reduced extraction efficiency for Sr(II) is beneficial for process applications, as the co-extraction of Sr(II) can be avoided, resulting in an easier process design. The use of these modified diglycol-amides in solvent extraction processes is discussed. Furthermore, the complexation of Cm(III) and Eu(III) to the ligands was studied using Time-Resolved-Laser-Fluorescence-Spectroscopy (TRLFS). The complexes were characterized by slope analysis and conditional stability constants were determined.

  17. INL Internship:Modification of Metal Contaminants on Oxide Surfaces Modified by Laser Irradiation

    SciTech Connect

    Michael J. Hansen; Robert Fox; Les Manner

    2006-08-01

    This project focuses on obtaining the optimal laser parameters needed for enhancing metal contaminants on cement, granite, and marble. The various parameters of the laser tested include the fluence, wavelength, and frequency. A chelating study was also performed in order to increase the volatility of cobalt. In the following paper each experiment is described in detail. No results are included in this report because their release is not approved and they could eventually become classified.

  18. Improving intergranular corrosion resistance of sensitized type 316 austenitic stainless steel by laser surface melting

    NASA Astrophysics Data System (ADS)

    Mudali, U. K.; Dayal, R. K.

    1992-06-01

    An attempt was made to modify the surface microstructure of a sensitized austenitic stainless steel, without affecting the bulk properties, using laser surface melting techniques. AISI type 316 stainless steel specimens sensitized at 923 K for 20 hr were laser surface melted using a pulsed ruby laser at 6 J energy. Two successive pulses were given to ensure uniform melting and homogenization. The melted layers were characterized by small angle X- ray diffraction and scanning electron microscopy. Intergranular corrosion tests were carried out on the melted region as per ASTM A262 practice A (etch test) and electrochemical potentiokinetic reactivation test. The results indicated an improvement in the intergranular corrosion resistance after laser surface melting. The results are explained on the basis of homogeneous and nonsensitized microstructure obtained at the surface after laser surface melting. It is concluded that laser surface melting can be used as an in situ method to increase the life of a sensitized component by modifying the surface microstructure.

  19. Dry Ice Etches Terrain

    NASA Technical Reports Server (NTRS)

    2007-01-01

    [figure removed for brevity, see original site] Figure 1

    Every year seasonal carbon dioxide ice, known to us as 'dry ice,' covers the poles of Mars. In the south polar region this ice is translucent, allowing sunlight to pass through and warm the surface below. The ice then sublimes (evaporates) from the bottom of the ice layer, and carves channels in the surface.

    The channels take on many forms. In the subimage shown here (figure 1) the gas from the dry ice has etched wide shallow channels. This region is relatively flat, which may be the reason these channels have a different morphology than the 'spiders' seen in more hummocky terrain.

    Observation Geometry Image PSP_003364_0945 was taken by the High Resolution Imaging Science Experiment (HiRISE) camera onboard the Mars Reconnaissance Orbiter spacecraft on 15-Apr-2007. The complete image is centered at -85.4 degrees latitude, 104.0 degrees East longitude. The range to the target site was 251.5 km (157.2 miles). At this distance the image scale is 25.2 cm/pixel (with 1 x 1 binning) so objects 75 cm across are resolved. The image shown here has been map-projected to 25 cm/pixel . The image was taken at a local Mars time of 06:57 PM and the scene is illuminated from the west with a solar incidence angle of 75 degrees, thus the sun was about 15 degrees above the horizon. At a solar longitude of 219.6 degrees, the season on Mars is Northern Autumn.

  20. UV Enhancement of CR-39 Nuclear Track Detector Etch Parameters

    NASA Astrophysics Data System (ADS)

    Traynor, Nathan; McLauchlin, Christopher; Dodge, Kenneth; McLean, James; Padalino, Stephen; Burke, Michelle; Sangster, Craig

    2014-03-01

    CR-39 plastic is an effective and commonly used solid state nuclear track detector. High-energy charged particles leave tracks of chemical damage. When CR-39 is chemically etched with NaOH at elevated temperatures, pits are produced at the track sites that are measurable by an optical microscope. We have shown that by exposing the CR-39 to high intensity UV light between nuclear irradiation and chemical etching, the rate at which the pits grow during etching is increased. The effect has been observed for wavelengths shorter than 350 nm, to at least 250 nm. Heating of samples during UV exposure dramatically increases the etch rates, although heating alone does not produce the effect. The pit enhancement is the result of an increase in both the bulk and track etch rates, while the ratio of these rates (which determines sensitivity to particles) remains roughly constant. By determining the best processing parameters, this effect promises to significantly reduce the time required to process CR-39 track detectors. Funded in part by a grant from the DOE through the Laboratory for Laser Energetics.

  1. High precision AlGaAsSb ridge-waveguide etching by in situ reflectance monitored ICP-RIE

    NASA Astrophysics Data System (ADS)

    Tran, N. T.; Breivik, Magnus; Patra, S. K.; Fimland, Bjørn-Ove

    2014-05-01

    GaSb-based semiconductor diode lasers are promising candidates for light sources working in the mid-infrared wavelength region of 2-5 μm. Using edge emitting lasers with ridge-waveguide structure, light emission with good beam quality can be achieved. Fabrication of the ridge waveguide requires precise etch stop control for optimal laser performance. Simulation results are presented that show the effect of increased confinement in the waveguide when the etch depth is well-defined. In situ reflectance monitoring with a 675 nm-wavelength laser was used to determine the etch stop with high accuracy. Based on the simulations of laser reflectance from a proposed sample, the etching process can be controlled to provide an endpoint depth precision within +/- 10 nm.

  2. Treatment of lumbar disc herniation by percutaneous laser disc decompression (PLDD) and modified PLDD

    NASA Astrophysics Data System (ADS)

    Chi, Xiao fei; Li, Hong zhi; Wu, Ru zhou; Sui, Yun xian

    2005-07-01

    Objective: To study the micro-invasive operative method and to compare the effect of treatment of PLDD and modified PLDD for Lumbar Disc Herniation. Method: Vaporized part of the nucleus pulposus in single or multiple point after acupuncture into lumbar disc, to reach the purpose of the decompression of the lumbar disc. Result: Among the 19 cases of the regular PLDD group, the excellent and good rate was 63.2%, and among the 40 cases of the modified PLDD group, the excellent and good rate was 82.5%. Conclusion: The modified PLDD has good effect on the treatment for lumbar disc herniation.

  3. Compact two-photon laser-scanning microscope made from minimally modified commercial components

    NASA Astrophysics Data System (ADS)

    Iyer, Vijay; Hoogland, Tycho; Losavio, Bradley E.; McQuiston, A. R.; Saggau, Peter

    2002-06-01

    A compact two-photon laser-scanning microscope (TPLSM) was constructed using a diode-pumped, mode-locked Nd:YLF laser (Biolight 1000, Coherent Laser Group) and a small confocal laser scan-head (PCM2000, Nikon Bioscience). The laser emits at 1047nm and is fiber-coupled to a compact compressor unit producing a pulse-width of ~175fsec. Both the pulse compressor and confocal scan head were interfaced on a small optical breadboard that was directly attached to an upright research microscope (Eclipse E600FN, Nikon Bioscience). Two-photon fluorescence emitted from the specimen was collected into a multimode fiber and transmitted directly to an external PMT supplied with the Nikon confocal system. The modifications to the scanhead were minimal (a single mirror replacement) and did not interfere with its confocal function. The resulting system offers several advantages: compact size, turnkey operation, and the ability to translate the microscope rather than an often delicate specimen. In addition, it is possible to switch between confocal and two-photon operation, allowing for straightforward comparison. Using this compact TPLSM, we obtained structural and functional images from hippocampal neurons in living brain slices using commonly available fluorophores.

  4. Parameter dependence of marginal microleakage in Er:YAG-laser-ablated and -modified dental preparations

    NASA Astrophysics Data System (ADS)

    Wilder-Smith, Petra B. B.; Choi, Sam; Kurosaki, Tom

    1998-04-01

    Previous studies have shown that the status of the residual tooth surface after hard dental tissue ablation using laser irradiation may vary depending on the parameter combinations and cooling mechanisms used. The purpose of this investigation was to assess the effects of Er:YAG laser cavity preparation at different fluences on microleakage of glass ionomer and composite resin restorations. In freshly extracted clinically and radiographically healthy human anterior teeth, standardized Class V cavities were prepared using the dental drill or the Er:YAG laser (Quantronix 294). Fluences of 10 - 40J/cm2 were used at a p.r.r. of 1 Hz and pulse durations of 250 microseconds under an air/water coolant spray. Thirty three teeth were included in each subgroup; 3 teeth were used for light microscopy and SEM; 15 underwent conventional restoration with glass ionomer and 15 with composite resin. After immersion in 5% methylene blue, dye penetration was measured linearly in 5 standardized locations on each of the bisected samples. Using the Pearson correlation coefficients, microleakage correlated strongly with laser fluence for glass ionomer (p equals 0.0238) and for composite resin (p equals 0.0099) restorations. Results differed significantly between the 2 restoration types (p less than 0.05). In conclusion, the parameters used during laser ablation of dental tissues must be carefully controlled to optimize clinical outcome.

  5. The adsorption of human serum albumin (HSA) on CO2 laser modified magnesia partially stabilised zirconia (MgO-PSZ).

    PubMed

    Hao, L; Lawrence, J

    2004-03-15

    Magnesia partially stabilised zirconia (MgO-PSZ), a bioinert ceramic, exhibits high mechanical strength, excellent corrosion resistance and good biocompatibility, but it does not naturally form a direct bond with bone resulting in a lack of osteointegration. The surface properties and structure of a biomaterial play an essential role in protein adsorption. As such, changes in the surface properties and structure of biomaterials may in turn alter their bioactivity. So, the fundamental reactions at the interface of biomaterials and tissue should influence their integration and bone-bonding properties. To this end, CO2 laser radiation was used to modify the surface roughness, crystal size, phase and surface energy of the MgO-PSZ. The basic mechanisms active in improving the surface energy were analysed and found to be the phase change and augmented surface area. The adsorption of human serum albumin (HSA), which is a non-cell adhesive protein, was compared on the untreated and CO2 laser modified MgO-PSZ. It was observed that the thickness of the adsorbed HSA decreased as the polar surface energy of the MgO-PSZ increased, indicating that HSA adsorbed more effectively on the hydrophobic MgO-PSZ surface than the hydrophilic surface. The current study provided important information regarding protein-biomaterial interactions and possible mechanisms behind the cell interaction and in vivo behaviour.

  6. Highly efficient and photostable solid-state dye lasers based on modified copolymers doped with PM567

    NASA Astrophysics Data System (ADS)

    Jiang, Yugang; Fan, Rongwei; Xia, Yuanqin; Chen, Deying

    2011-04-01

    Solid-state dye samples based on modified copolymers of methyl methacrylate (MMA) and 2-hydroxyethyl methacrylate (HEMA) with methanol doped with PM567 were first prepared. The volume proportions of methanol have great effects on the laser's characteristics including spectra, lasing output and thermal properties. The highest slope efficiency of 64.25% was achieved in the sample MP (MMA:HEMA = 85:15 + 10% methanol). Pumping the samples at a repetition rate of 5 Hz with a pulse energy as high as 100 mJ (the fluence was 0.26 J/cm2), the maximum lifetime of 278,000 shots was obtained in the sample MP (MMA:HEMA = 85:15 + 15% methanol), and the corresponding normalized photostability reached 180.7 GJ/mol. The obtained ten-shots damage thresholds were as high as 6.7 J/cm2. The results indicate that the laser properties of solid-state dyes can be greatly enhanced by using modified copolymers of MMA and HEMA with methanol as solid hosts.

  7. Effects of etching and adhesive applications on the bond strength between composite resin and glass-ionomer cements

    PubMed Central

    PAMIR, Tijen; ŞEN, Bilge Hakan; EVCIN, Özgür

    2012-01-01

    Objective This study determined the effects of various surface treatment modalities on the bond strength of composite resins to glass-ionomer cements. Material and Methods Conventional (KetacTM Molar Quick ApplicapTM) or resin-modified (PhotacTM Fil Quick AplicapTM) glass-ionomer cements were prepared. Two-step etch-rinse & bond adhesive (AdperTM Single Bond 2) or single-step self-etching adhesive (AdperTM PromptTM L-PopTM) was applied to the set cements. In the etch-rinse & bond group, the sample surfaces were pre-treated as follows: (1) no etching, (2) 15 s of etching with 35% phosphoric acid, (3) 30 s of etching, and (4) 60 s of etching. Following the placement of the composite resin (FiltekTM Z250), the bond strength was measured in a universal testing machine and the data obtained were analyzed with the two-way analysis of variance (ANOVA) followed by the Tukey's HSD post hoc analysis (p=0.05). Then, the fractured surfaces were examined by scanning electron microscopy. Results The bond strength of the composite resin to the conventional glass-ionomer cement was significantly lower than that to the resin-modified glass-ionomer cement (p<0.001). No significant differences were determined between the self-etching and etch-rinse & bond adhesives at any etching time (p>0.05). However, a greater bond strength was obtained with 30 s of phosphoric acid application. Conclusions The resin-modified glass-ionomer cement improved the bond strength of the composite resin to the glass-ionomer cement. Both etch-rinse & bond and self-etching adhesives may be used effectively in the lamination of glass-ionomer cements. However, an etching time of at least 30 s appears to be optimal. PMID:23329245

  8. Shear bond strength of resin-modified glass ionomer cements to Er:YAG laser-treated tooth structure.

    PubMed

    de Souza-Gabriel, Aline Evangelista; do Amaral, Flávia Lucisano Botelho; Pécora, Jesus Djalma; Palma-Dibb, Regina Guenka; Corona, Silmara Aparecida Milori

    2006-01-01

    This study evaluated the effect of Er:YAG laser irradiation of enamel and dentin on the shear bond strength of resin-modified glass ionomer cements (RMGIC). Twenty molars were selected and the roots removed. The crowns were bisected, embedded in polyester resin and ground to plane the enamel or expose the dentin. The bonding site was delimited, and samples were randomly assigned according to the cavity preparation device: I--Er.YAG laser (350mJ/2Hz); II--Carbide bur (control group). They were subdivided according to the restorative material employed: A) Fuji II LC (GC); B) Vitremer (3M). Samples were then fixed to a metallic device where ionomer cylinders were prepared. Sequentially, the molars were stored for 24 hours and subjected to a shear bond strength test (50Kgf at 0.5 mm/minute). Means in MPa were: Enamel--IA) 4.77 (+/- 1.12); IB) 4.36 (+/- 1.50); IIA) 7.70 (+/- 1.53); IIB) 7.34 (+/- 1.52) and Dentin--IA) 3.13 (+/- 1.15); IB) 2.67 (+/- 0.74); IIA) 6.38 (+/- 1.44); IIB) 5.58 (+/-2.09). Data were submitted to statistical analysis by ANOVA. Adhesion for enamel was more efficient than for dentin (p < 0.01). The cavities prepared with a conventional bur (control group) presented higher bond strength values than those recorded for Er:YAG laser (p < 0.01). No significant differences were observed between the restorative materials. Based on these results, it was concluded that Er:YAG laser adversely affected the shear bond strength of RMGIC for both enamel and dentin.

  9. Regenerative Electroless Etching of Silicon.

    PubMed

    Kolasinski, Kurt W; Gimbar, Nathan J; Yu, Haibo; Aindow, Mark; Mäkilä, Ermei; Salonen, Jarno

    2017-01-09

    Regenerative electroless etching (ReEtching), described herein for the first time, is a method of producing nanostructured semiconductors in which an oxidant (Ox1 ) is used as a catalytic agent to facilitate the reaction between a semiconductor and a second oxidant (Ox2 ) that would be unreactive in the primary reaction. Ox2 is used to regenerate Ox1 , which is capable of initiating etching by injecting holes into the semiconductor valence band. Therefore, the extent of reaction is controlled by the amount of Ox2 added, and the rate of reaction is controlled by the injection rate of Ox2 . This general strategy is demonstrated specifically for the production of highly luminescent, nanocrystalline porous Si from the reaction of V2 O5 in HF(aq) as Ox1 and H2 O2 (aq) as Ox2 with Si powder and wafers.

  10. Comparative Evaluation of the Etching Pattern of Er,Cr:YSGG & Acid Etching on Extracted Human Teeth-An ESEM Analysis

    PubMed Central

    Mazumdar, Dibyendu; Ranjan, Shashi; Krishna, Naveen Kumar; Kole, Ravindra; Singh, Priyankar; Lakiang, Deirimika; Jayam, Chiranjeevi

    2016-01-01

    Introduction Etching of enamel and dentin surfaces increases the surface area of the substrate for better bonding of the tooth colored restorative materials. Acid etching is the most commonly used method. Recently, hard tissue lasers have been used for this purpose. Aim The aim of the present study was to evaluate and compare the etching pattern of Er,Cr:YSGG and conventional etching on extracted human enamel and dentin specimens. Materials and Methods Total 40 extracted non-diseased teeth were selected, 20 anterior and 20 posterior teeth each for enamel and dentin specimens respectively. The sectioned samples were polished by 400 grit Silicon Carbide (SiC) paper to a thickness of 1.0 ± 0.5 mm. The enamel and dentin specimens were grouped as: GrE1 & GrD1 as control specimens, GrE2 & GrD2 were acid etched and GrE3 & GrD3 were lased. Acid etching was done using Conditioner 36 (37 % phosphoric acid) according to manufacturer instructions. Laser etching was done using Er,Cr:YSGG (Erbium, Chromium : Ytrium Scandium Gallium Garnet) at power settings of 3W, air 70% and water 20%. After surface treatment with assigned agents the specimens were analyzed under ESEM (Environmental Scanning Electron Microscope) at X1000 and X5000 magnification. Results Chi Square and Student “t” statistical analysis was used to compare smear layer removal and etching patterns between GrE2-GrE3. GrD2 and GrD3 were compared for smear layer removal and diameter of dentinal tubule opening using the same statistical analysis. Chi-square test for removal of smear layer in any of the treated surfaces i.e., GrE2-E3 and GrD2-D3 did not differ significantly (p>0.05). While GrE2 showed predominantly type I etching pattern (Chi-square=2.78, 0.05

    0.10) and GrE3 showed type III etching (Chi-square=4.50, p<0.05). The tubule diameters were measured using GSA (Gesellschaft fur Softwareentwicklung und Analytik, Germany) image analyzer and the ‘t’ value of student ‘t’ test was 18.10 which was a

  11. Modified FIR thermometry for surface temperature sensing by using high power laser.

    PubMed

    Wang, Ran; Zhang, Xinlu; Zhang, Zhilin; Zhong, Hujiang; Chen, Yujin; Zhao, Enming; Vasilescu, Steven; Liu, Lu

    2017-01-23

    The FIR (fluorescence intensity ratio) technique for optical thermometry has attracted considerable attention over recent years due to its high sensitivity and high spatial resolution. However, it is thought that a heating effect induced by incident light may lead to temperature overestimations, which in turn impedes the reliability of this technique for applications which require high levels of accuracy. To further improve the FIR technique, this paper presents a modified calibration expression, which is suitable for surface temperature sensing, based on the temperature distribution (calculated through COMSOL software). In addition, this modified method is verified by the experimental data.

  12. Refractive index-modified structures in glass written by 266nm fs laser pulses.

    PubMed

    Saliminia, Ali; Bérubé, Jean-Philippe; Vallée, Réal

    2012-12-03

    We demonstrate the inscription of embedded waveguides, anti-waveguides and Bragg gratings by use of intense femtosecond (fs) UV laser pulses at 266nm in pure fused silica, and for the first time, in bulk fused quartz and ZBLAN glasses. The magnitude of induced index changes, depends, besides pulse energy and translation speed, largely on writing depth and varies from ~10(-4) for smooth modifications to ~10(-3) for damaged structures. The obtained results are promising as they present the feasibility of fabrication of short (< 0.2μm) period first-order fiber Bragg gratings (FBGs) for applications such as in realization of all-fiber lasers operating at short wavelengths.

  13. Observing visible-range photoluminescence in GaAs nanowires modified by laser irradiation

    NASA Astrophysics Data System (ADS)

    Alekseev, P. A.; Dunaevskiy, M. S.; Kirilenko, D. A.; Smirnov, A. N.; Davydov, V. Yu.; Berkovits, V. L.

    2017-02-01

    We study the structural and chemical transformations induced by focused laser beam in GaAs nanowires with an axial zinc-blende/wurtzite (ZB/WZ) heterostructure. The experiments are performed using a combination of transmission electron microscopy, energy-dispersive X-ray spectroscopy, Raman scattering, and photoluminescence spectroscopy. For both the components of heterostructure, laser irradiation under atmospheric air is found to produce a double surface layer which is composed of crystalline arsenic and of amorphous GaOx. The latter compound is responsible for the appearance of a peak at 1.76 eV in photoluminescence spectra of GaAs nanowires. Under an increased laser power density, due to sample heating, evaporation of the surface crystalline arsenic and formation of β-Ga2O3 nanocrystals proceed on the surface of the zinc-blende part of nanowire. The formed nanocrystals reveal a photoluminescence band in a visible range of 1.7-2.4 eV. At the same power density for wurtzite part of the nanowire, total amorphization with the formation of β-Ga2O3 nanocrystals occurs. Observed transformation of WZ-GaAs to β-Ga2O3 nanocrystals presents an available way for the creation of axial and radial heterostructures ZB-GaAs/β-Ga2O3 for optoelectronic and photonic applications.

  14. Modifying proton fluence spectra to generate spread-out Bragg peaks with laser accelerated proton beams.

    PubMed

    Schell, S; Wilkens, J J

    2009-10-07

    Currently, energy spectra of laser accelerated proton beams are far from being monoenergetic. For their application in radiation therapy, energy selection systems using magnetic fields have been proposed to single out particles with the desired energy. These systems allow the choice of protons between a lowest and a highest energy. In this work, we present a slight modification that allows us to influence the relative number of particles per energy bin. In fact, the transmitted spectrum can be shaped in such a way that it corresponds to a full spread out Bragg peak delivered simultaneously. This change of the spectrum can be achieved by inserting suitably formed scattering material at the central plane of the energy selection system where the particles are separated in space depending on their energy. With the help of Monte Carlo simulations we analysed both simple wedge geometries and various stacks of lead slices. We found that these configurations can provide energy spectra that naturally produce spread out Bragg peaks within one laser shot. This increases the particle efficiency of the whole system and makes laser accelerated protons more suitable for radiation therapy.

  15. Two-year clinical trial of a universal adhesive in total-etch and self-etch mode in non-carious cervical lesions☆

    PubMed Central

    Lawson, Nathaniel C.; Robles, Augusto; Fu, Chin-Chuan; Lin, Chee Paul; Sawlani, Kanchan; Burgess, John O.

    2016-01-01

    Objectives To compare the clinical performance of Scotchbond™ Universal Adhesive used in self- and total-etch modes and two-bottle Scotchbond™ Multi-purpose Adhesive in total-etch mode for Class 5 non-carious cervical lesions (NCCLs). Methods 37 adults were recruited with 3 or 6 NCCLs (>1.5 mm deep). Teeth were isolated, and a short cervical bevel was prepared. Teeth were restored randomly with Scotchbond Universal total-etch, Scotchbond Universal self-etch or Scotchbond Multi-purpose followed with a composite resin. Restorations were evaluated at baseline, 6, 12 and 24 months for marginal adaptation, marginal discoloration, secondary caries, and sensitivity to cold using modified USPHS Criteria. Patients and evaluators were blinded. Logistic and linear regression models using a generalized estimating equation were applied to evaluate the effects of time and adhesive material on clinical assessment outcomes over the 24 month follow-up period. Kaplan–Meier method was used to compare the retention between adhesive materials. Results Clinical performance of all adhesive materials deteriorated over time for marginal adaptation, and discoloration (p <0.0001). Both Scotchbond Universal self-etch and Scotchbond Multi-purpose materials were more than three times as likely to contribute to less satisfying performance in marginal discoloration over time than Scotchbond Universal total-etch. The retention rates up to 24 months were 87.6%, 94.9% and 100% for Scotchbond Multi-purpose and Scotchbond Universal self-etch and total-etch, respectively. Conclusions Scotchbond Universal in self- and total- etch modes performed similar to or better than Scotchbond Multipurpose, respectively. Clinical significance 24 month evaluation of a universal adhesive indicates acceptable clinical performance, particularly in a total-etch mode. PMID:26231300

  16. Promotion of protein crystal growth by actively switching crystal growth mode via femtosecond laser ablation

    NASA Astrophysics Data System (ADS)

    Tominaga, Yusuke; Maruyama, Mihoko; Yoshimura, Masashi; Koizumi, Haruhiko; Tachibana, Masaru; Sugiyama, Shigeru; Adachi, Hiroaki; Tsukamoto, Katsuo; Matsumura, Hiroyoshi; Takano, Kazufumi; Murakami, Satoshi; Inoue, Tsuyoshi; Yoshikawa, Hiroshi Y.; Mori, Yusuke

    2016-11-01

    Large single crystals with desirable shapes are essential for various scientific and industrial fields, such as X-ray/neutron crystallography and crystalline devices. However, in the case of proteins the production of such crystals is particularly challenging, despite the efforts devoted to optimization of the environmental, chemical and physical parameters. Here we report an innovative approach for promoting the growth of protein crystals by directly modifying the local crystal structure via femtosecond laser ablation. We demonstrate that protein crystals with surfaces that are locally etched (several micrometers in diameter) by femtosecond laser ablation show enhanced growth rates without losing crystal quality. Optical phase-sensitive microscopy and X-ray topography imaging techniques reveal that the local etching induces spiral growth, which is energetically advantageous compared with the spontaneous two-dimensional nucleation growth mode. These findings prove that femtosecond laser ablation can actively switch the crystal growth mode, offering flexible control over the size and shape of protein crystals.

  17. Sputter-Etching Characteristics of BST and SBT using a Surface-Wave High-Density Plasma Reactor.

    NASA Astrophysics Data System (ADS)

    Stafford, L.; Margot, J.; Delprat, S.; Chaker, M.; Queney, D.

    2001-10-01

    In the context of the integration of ferroelectric capacitors such as FeRAMs and DRAMs, the dry etching of pulse laser deposited barium-strontium-titanate (BST) and bismuth-strontium-tantalate (SBT) is investigated using a non-reactive surface-wave high-density argon magnetoplasma. The etching characteristics of rf-biased thin films are evaluated as a function of the self-bias voltage, the magnetic field intensity and the gas pressure. It is found that high etch rates with a good selectivity over resist can be achieved without any plasma chemistry provided the plasma is operated in the mtorr regime. For BST, etch rates as high as 1000 Åmin with a selectivity of 0.6 over HPR504 photoresist are obtained for self-bias voltages lower than 150 V. Both BST and SBT present similar sputter-etching characteristics, SBT being however etched faster then BST.

  18. Thermoluminescent response of C-modified Al2O3 thin films deposited by parallel laser ablation plasmas

    NASA Astrophysics Data System (ADS)

    Garcés, J.; Escobar-Alarcón, L.; Gonzalez-Martinez, P. R.; Solís-Casados, D. A.; Romero, S.; Gonzalez-ZAvala, F.; Haro-Poniatowski, E.

    2017-01-01

    Aluminium oxide thin films modified with different amounts of carbon were prepared using a parallel laser ablation plasmas configuration. The effect of the amount of carbon incorporated in the films on their compositional, morphological, structural, and thermoluminescent properties was studied. The results showed that films with different C content, from 11 to 33 at. %, were obtained. The structural characterization revealed the growth of an amorphous material. Surface morphology of the obtained thin films showed smooth surfaces. The films were exposed to UV and gamma radiation (Co-60) in order to study their thermoluminescence response. The results tend to indicate that carbon incorporation into the alumina favours the increase of a high temperature TL peak.

  19. Preparation of nanostructured Bi-modified TiO2 thin films by crossed-beam laser ablation plasmas

    NASA Astrophysics Data System (ADS)

    Escobar-Alarcon, L.; Solís-Casados, D. A.; González-Zavala, F.; Romero, S.; Fernandez, M.; Haro-Poniatowski, E.

    2017-01-01

    The preparation and characterization of titanium dioxide thin films modified with different amounts of bismuth using a two laser ablation plasmas configuration is reported. The plasmas were produced ablating simultaneously two different targets, one of bismuth and other of titanium dioxide, using a Nd:YAG laser with emission in the fundamental line. The elemental composition, together with the vibrational and optical properties of the deposited films were investigated as a function of the parameters of the bismuth plasma. The composition of the thin films was determined from measurements of X-ray photoelectron spectroscopy (XPS) as well as by Rutherford backscattering spectroscopy (RBS). The structural modification of the deposited material, due to the incorporation of Bi, was characterized by Raman spectroscopy. The optical properties were determined from UV-Vis spectroscopy measurements. It is found that bismuth incorporation has an important effect on the optical properties of TiO2 narrowing the band gap from 3.2 to 2.5 eV.

  20. Semiconductor etching by hyperthermal neutral beams

    NASA Technical Reports Server (NTRS)

    Minton, Timothy K. (Inventor); Giapis, Konstantinos P. (Inventor)

    1999-01-01

    An at-least dual chamber apparatus and method in which high flux beams of fast moving neutral reactive species are created, collimated and used to etch semiconductor or metal materials from the surface of a workpiece. Beams including halogen atoms are preferably used to achieve anisotropic etching with good selectivity at satisfactory etch rates. Surface damage and undercutting are minimized.

  1. Methods for dry etching semiconductor devices

    DOEpatents

    Bauer, Todd; Gross, Andrew John; Clews, Peggy J.; Olsson, Roy H.

    2016-11-01

    The present invention provides methods for etching semiconductor devices, such aluminum nitride resonators. The methods herein allow for devices having improved etch profiles, such that nearly vertical sidewalls can be obtained. In some examples, the method employs a dry etch step with a primary etchant gas that omits BCl.sub.3, a common additive.

  2. Precision Laser Annealing of Focal Plane Arrays

    SciTech Connect

    Bender, Daniel A.; DeRose, Christopher; Starbuck, Andrew Lea; Verley, Jason C.; Jenkins, Mark W.

    2015-09-01

    We present results from laser annealing experiments in Si using a passively Q-switched Nd:YAG microlaser. Exposure with laser at fluence values above the damage threshold of commercially available photodiodes results in electrical damage (as measured by an increase in photodiode dark current). We show that increasing the laser fluence to values in excess of the damage threshold can result in annealing of a damage site and a reduction in detector dark current by as much as 100x in some cases. A still further increase in fluence results in irreparable damage. Thus we demonstrate the presence of a laser annealing window over which performance of damaged detectors can be at least partially reconstituted. Moreover dark current reduction is observed over the entire operating range of the diode indicating that device performance has been improved for all values of reverse bias voltage. Additionally, we will present results of laser annealing in Si waveguides. By exposing a small (<10 um) length of a Si waveguide to an annealing laser pulse, the longitudinal phase of light acquired in propagating through the waveguide can be modified with high precision, <15 milliradian per laser pulse. Phase tuning by 180 degrees is exhibited with multiple exposures to one arm of a Mach-Zehnder interferometer at fluence values below the morphological damage threshold of an etched Si waveguide. No reduction in optical transmission at 1550 nm was found after 220 annealing laser shots. Modeling results for laser annealing in Si are also presented.

  3. Geomorphic and Spectral Mapping of Meridiani Planum Eastern Etched Terrain

    NASA Astrophysics Data System (ADS)

    Griffes, J. L.; Arvidson, R. E.; Bibring, J.; Poulet, F.

    2004-12-01

    Mars Orbiter Camera (MOC), Mars Orbiter Laser Altimeter (MOLA), Thermal Emission Imaging System (THEMIS), and Mars Express (OMEGA) data were compiled and coregistered for analysis of exposures of etched terrain materials in the eastern portion of Meridiani Planum (latitude: -2.5° to 5° N, longitude: 0° to 8° E). The etched terrain in this region is a useful analog to the terrain underlying the hematite-bearing deposits at the Opportunity landing site. Etched materials in the study area are exposed in a NE-SW trending basin approximately 400 meters deep, 185 kilometers wide, and 315 kilometers long. We have mapped a stack (200 meters thick) of layered deposits which unconformably overlie the Noachian dissected cratered terrain. The surfaces range morphologically from smooth plains, patterned ground, and plains cut by interconnected ridges. Further, the units have distinct spectral signatures in OMEGA hyperspectral data (0.35 to 5.1 μ m) acquired on orbit 485. Detailed morphologic and mineralogic maps for the eastern etched terrain will be presented and discussed.

  4. Spotlight on lasers. A look at potential benefits

    SciTech Connect

    Zakariasen, K.L.; MacDonald, R.; Boran, T. )

    1991-07-01

    Before lasers can be highly integrated into clinical practice, further research must prove the efficacy, efficiency, consistency and safety of this new technology. Currently, increased caries prevention and rapid laser etching are two potential benefits of laser technology.

  5. 12P-conjugated PEG-modified gold nanorods combined with near-infrared laser for tumor targeting and photothermal therapy.

    PubMed

    Zhan, Tao; Li, Pengfei; Bi, Shan; Dong, Biao; Song, Hongwei; Ren, Hui; Wang, Liping

    2012-09-01

    Gold nanorods have been reported as potential tumor photothermal therapy in vivo and in vitro. However, development of the safe and efficient tumor-targeting gold nanorods for in vivo localized tumor therapy is still a challenge. In our present study, we synthesized the PEG modified gold nanorods and demonstrated its negligible cytotoxicity in vitro. These nanorods also have been demonstrated to efficiently ablate the different kinds of tumor cells in vitro after exposure to the near-infrared laser. When the PEG modified gold nanorods conjugated with the 12P (sequence: TACHQHVRMVRP), this conjugate showed great tumor-targeting and hyperthermia effects on the human liver cancer cell line HepG2 in vitro when coupled with the near-infrared laser treatment. To determine the potential hyperthermia effect of PEG modified gold nanorods or 12P conjugate on tumor cells in vivo, the mice hepatic cancer cells were used to induce the subcutaneous tumor-bearing model in ICR mice. The significant inhibition effects of near-infrared laser mediated PEG modified gold nanorods or 12P conjugate on the tumor growth were observed. These composite results suggest that the 12P-conjugated PEG modified gold nanorods exhibit great biocompatible, particular tumor-targeting and effective photothermal ablation of tumor cells, which warrant the potential therapeutic value of this conjugate for further application in in vivo localized tumor therapy.

  6. Ion-beam-assisted etching of diamond

    NASA Technical Reports Server (NTRS)

    Efremow, N. N.; Geis, M. W.; Flanders, D. C.; Lincoln, G. A.; Economou, N. P.

    1985-01-01

    The high thermal conductivity, low RF loss, and inertness of diamond make it useful in traveling wave tubes operating in excess of 500 GHz. Such use requires the controlled etching of type IIA diamond to produce grating like structures tens of micrometers deep. Previous work on reactive ion etching with O2 gave etching rates on the order of 20 nm/min and poor etch selectivity between the masking material (Ni or Cr) and the diamond. An alternative approach which uses a Xe(+) beam and a reactive gas flux of NO2 in an ion-beam-assisted etching system is reported. An etching rate of 200 nm/min was obtained with an etching rate ratio of 20 between the diamond and an aluminum mask.

  7. Selective Si Etching Using HCl Vapor

    NASA Astrophysics Data System (ADS)

    Isheden, C.; Hellström, P. E.; Radamson, H. H.; Zhang, S.-L.; Östling, M.

    2004-01-01

    Selective Si etching using HCl in a reduced pressure chemical vapor deposition reactor in the temperature range 800 1000°C is investigated. At 900°C, the etch process is anisotropic, exhibiting the densely packed (100), (311) and (111) surfaces. This behavior indicates that the etch process is limited by surface reaction, since the etch rate in the directions with higher atomic concentration is lower. When the temperature is decreased to 800°C, etch pits occur. A more isotropic etch is obtained at 1000°C, however at this temperature the masking oxide is attacked and the etch surface is rough. Thus the temperature has to be under the present process conditions, confined to a narrow window to yield desirable properties.

  8. Energy transfer studies in binary laser dye mixtures in organically modified silicates

    NASA Astrophysics Data System (ADS)

    Al-Maliki, Firas J.

    2014-08-01

    Energy transfer of binary dye mixture (Rhodamine110, as donor, and Oxizine1and/or Nile blue as acceptors) doped in organically modified silicates (ORMOSILs) matrix has been studied. The energy transfer process from donor molecules to acceptor molecules in the final bulk samples has been observed spectrally. Some of energy transfer parameters have been determined as a function of acceptor concentration. Stern-Volmer relation of energy transfer has been proved and the dominant mechanism of the energy transfer of dye mixture doped in such matrices has been determined. The results show that the emission properties of acceptor molecules (Ox1 and Nb) can be enhanced using the dye mixing recipe in sol-gel matrices.

  9. Etching of GaN layers at electrolysis under UV-irradiation

    NASA Astrophysics Data System (ADS)

    Zubenko, T. K.; Puzyk, M. V.; Stozharov, V. M.; Ermakov, I. A.; Kovalev, D. S.; Ivanova, S. A.; Usikov, A. S.; Medvedev, O. S.; Papchenko, B. P.; Kurin, S. Yu; Antipov, A. A.; Chernyakov, A. E.

    2016-08-01

    Etching of the GaN layers in 1M KOH aqua solution under irradiation was studied by the electro-stimulated photolysis using N2-laser (337 nm, 60 W/m2) as a light source. It was observed that the size and the depth of the failure monotonically depend on the optical power and the irradiation time of the N2 laser and the GaN layer type of conductivity. The GaN layers etching rate was evaluated. A mechanism of the failure in the n-GaN layers is discussed.

  10. Laser labeling, a safe technology to label produce

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Laser labeling of fruits and vegetables is an alternative means to label produce. Low energy CO2 laser beams etch the surface showing the contrasting underlying layer. These etched surfaces can promote water loss and potentially allow for entry of decay organisms. The long-term effects of laser labe...

  11. In-Plasma Photo-Assisted Etching

    NASA Astrophysics Data System (ADS)

    Economou, Demetre

    2015-09-01

    A methodology to precisely control the ion energy distribution (IED) on a substrate allowed the study of silicon etching as a function of ion energy at near-threshold energies. Surprisingly, a substantial etching rate was observed, independent of ion energy, when the ion energy was below the ion-assisted etching threshold (~ 16 eV for etching silicon with chlorine plasma). Careful experiments led to the conclusion that this ``sub-threshold'' etching was due to photons, predominately at wavelengths <1700 Å. Among the plasmas investigated, photo-assisted etching (PAE) was lowest in Br2/Ar gas mixtures and highest in HBr/Cl2/Ar. Above threshold etching rates scaled with the square root of ion energy. PAE rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) and Ar emission intensity (7504 Å). Scanning electron and atomic force microscopy (SEM and AFM) revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. In-plasma PAE may be be a complicating factor for processes that require low ion energies, such as atomic layer etching. On the other hand PAE could produce sub-10 nm high aspect ratio (6:1) features by highly selective plasma etching to transfer nascent nanopatterns in silicon. Work supported by DOE Plasma Science Center and NSF.

  12. Derivatization, stabilization and detection of biogenic amines by cyclodextrin-modified capillary electrophoresis-laser-induced fluorescence detection.

    PubMed

    Male, K B; Luong, J H

    2001-08-17

    o-Phthalaldehyde (OPA) derivatives of eight biogenic amines were stabilized at 5 degrees C by forming inclusion complexes with methyl-beta-cyclodextrin (MBCD). The derivatives were separated and detected by cyclodextrin-modified capillary electrophoresis (CE) with UV or laser-induced fluorescence (LIF) detection. Using a borate buffer, pH 9.0 consisting of ethanol and a mixture of negatively charged sulfobutylether-beta-cyclodextrin and neutral MBCD, baseline separation of the eight OPA derivatives was achieved within 25 min with high separation efficiencies. The detection limits (S/N=3) obtained by UV and LIF detection were determined to be 10 microM and 0.250 microM, respectively. Glutamic acid was added after the initial derivatization step to neutralize residual OPA which otherwise caused a significant interference, particularly when analysis was performed around the detection limit of the OPA derivatives. Important biogenic amines in fish, wine and urine were then derivatized and determined by CE-LIF. In the case of sole and rainbow trout, the results obtained were validated by an enzymatic assay using putrescine oxidase.

  13. Light wave interference during laser drilling of polymer coatings

    NASA Astrophysics Data System (ADS)

    Pargellis, A. N.; Au, D. T. W.; Kestenbaum, A.

    1988-12-01

    A CO2 laser has been used to drill holes in a 150-μm-thick, UV-curable, modified acrylate, polymer coating a copper substrate. A typical hole is 100-150 μm in diameter. The holes in this study were each made with a single laser pulse of 10.6-μm wavelength, duration 100 or 200 μs, and 4-20 mJ energy. Two superimposed sets of periodic ripples have been observed on the hole walls. The shorter wavelength varies from 4.0 μm at the top of the hole to 5.3 μm at the bottom of the hole. The longer wavelength appears to be 13.2 μm and is attenuated as the wave propagates towards the copper substrate. The experimental data are compared with values calculated using a model that considers the interference of a standing wave inside the hole with radiation propagating through the dielectric surrounding the hole. The amplitude (trough-to-peak distance) of the waves in the hole wall is about half the wavelength of the standing waves. The long-wavelength waves (13.2 μm) yield ripples in the wall of 6.5-μm amplitude. These ripples give 13.0 μm (0.5 mils) as an ultimate lower limit for laser drilling holes using the 10.6-μm wavelengths obtained with a CO2 laser. Chemical etching of the polymer causes all of the holes to have thin rims surrounding the top of the hole. This is due to accelerated etching of the less cured polymer material inside the hole. A chemical etching process etches away some of the ripple pattern, particularly near the top of the hole.

  14. Etching method for photoresists or polymers

    NASA Technical Reports Server (NTRS)

    Lerner, Narcinda R. (Inventor); Wydeven, Theodore J., Jr. (Inventor)

    1991-01-01

    A method for etching or removing polymers, photoresists, and organic contaminants from a substrate is disclosed. The method includes creating a more reactive gas species by producing a plasma discharge in a reactive gas such as oxygen and contacting the resulting gas species with a sacrificial solid organic material such as polyethylene or polyvinyl fluoride, reproducing a highly reactive gas species, which in turn etches the starting polymer, organic contaminant, or photoresist. The sample to be etched is located away from the plasma glow discharge region so as to avoid damaging the substrate by exposure to high energy particles and electric fields encountered in that region. Greatly increased etching rates are obtained. This method is highly effective for etching polymers such as polyimides and photoresists that are otherwise difficult or slow to etch downstream from an electric discharge in a reactive gas.

  15. Etching radical controlled gas chopped deep reactive ion etching

    DOEpatents

    Olynick, Deidre; Rangelow, Ivo; Chao, Weilun

    2013-10-01

    A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH.sub.4 and controlling the passivation rate and stoichiometry using a CF.sub.2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

  16. Understanding and controlling the step bunching instability in aqueous silicon etching

    NASA Astrophysics Data System (ADS)

    Bao, Hailing

    Chemical etching of silicon has been widely used for more than half a century in the semiconductor industry. It not only forms the basis for current wafer cleaning processes, it also serves as a powerful tool to create a variety of surface morphologies for different applications. Its potential for controlling surface morphology at the atomic scale over micron-size regions is especially appealing. In spite of its wide usage, the chemistry of silicon etching is poorly understood. Many seemingly simple but fundamental questions have not been answered. As a result, the development of new etchants and new etching protocols are based on expensive and tedious trial-and-error experiments. A better understanding of the etching mechanism would direct the rational formulation of new etchants that produce controlled etch morphologies. Particularly, micron-scale step bunches spontaneously develop on the vicinal Si(111) surface etched in KOH or other anisotropic aqueous etchants. The ability to control the size, orientation, density and regularity of these surface features would greatly improve the performance of microelectromechanical devices. This study is directed towards understanding the chemistry and step bunching instability in aqueous anisotropic etching of silicon through a combination of experimental techniques and theoretical simulations. To reveal the cause of step-bunching instability, kinetic Monte Carlo simulations were constructed based on an atomistic model of the silicon lattice and a modified kinematic wave theory. The simulations showed that inhomogeneity was the origin of step-bunching, which was confirmed through STM studies of etch morphologies created under controlled flow conditions. To quantify the size of the inhomogeneities in different etchants and to clarify their effects, a five-parallel-trench pattern was fabricated. This pattern used a nitride mask to protect most regions of the wafer; five evenly spaced etch windows were opened to the Si(110

  17. Sensitivity Enhancement of RF Plasma Etch Endpoint Detection With K-means Cluster Analysis

    NASA Astrophysics Data System (ADS)

    Lee, Honyoung; Jang, Haegyu; Lee, Hak-Seung; Chae, Heeyeop

    2015-09-01

    Plasma etching process is the core process in semiconductor fabrication, and the etching endpoint detection is one of the essential FDC (Fault Detection and Classification) for yield management and mass production. In general, Optical emission spectrocopy (OES) has been used to detect endpoint because OES can be a non-invasive and real-time plasma monitoring tool. In OES, the trend of a few sensitive wavelengths is traced. However, in case of small-open area etch endpoint detection (ex. contact etch), it is at the boundary of the detection limit because of weak signal intensities of reaction reactants and products. Furthemore, the various materials covering the wafer such as photoresist, dielectric materials, and metals make the analysis of OES signals complicated. In this study, full spectra of optical emission signals were collected and the data were analyzed by a data-mining approach, modified K-means cluster analysis. The K-means cluster analysis is modified suitably to analyze a thousand of wavelength variables from OES. This technique can improve the sensitivity of EPD for small area oxide layer etching processes: about 1.0% oxide area. This technique is expected to be applied to various plasma monitoring applications including fault detections as well as EPD. Plasma Etch, EPD, K-means Cluster Analysis.

  18. Controlled ion implant damage profile for etching

    DOEpatents

    Arnold, Jr., George W.; Ashby, Carol I. H.; Brannon, Paul J.

    1990-01-01

    A process for etching a material such as LiNbO.sub.3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.

  19. Selective etching of silicon carbide films

    DOEpatents

    Gao, Di; Howe, Roger T.; Maboudian, Roya

    2006-12-19

    A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

  20. Method for dry etching of transition metals

    DOEpatents

    Ashby, C.I.H.; Baca, A.G.; Esherick, P.; Parmeter, J.E.; Rieger, D.J.; Shul, R.J.

    1998-09-29

    A method for dry etching of transition metals is disclosed. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorus-containing {pi}-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/{pi}-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the {pi}-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the {pi}-acceptor ligand for forming the volatile transition metal/{pi}-acceptor ligand complex.

  1. Advanced plasma etch technologies for nanopatterning

    NASA Astrophysics Data System (ADS)

    Wise, Rich

    2012-03-01

    Advances in patterning techniques have enabled the extension of immersion lithography from 65/45nm through 14/10nm device technologies. A key to this increase in patterning capability has been innovation in the subsequent dry plasma etch processing steps. Multiple exposure techniques such as litho-etch-litho-etch, sidewall image transfer, line/cut mask and self-aligned structures have been implemented to solution required device scaling. Advances in dry plasma etch process control, across wafer uniformity and etch selectivity to both masking materials and have enabled adoption of vertical devices and thin film scaling for increased device performance at a given pitch. Plasma etch processes such as trilayer etches, aggressive CD shrink techniques, and the extension of resist trim processes have increased the attainable device dimensions at a given imaging capability. Precise control of the plasma etch parameters affecting across design variation, defectivity, profile stability within wafer, within lot, and across tools have been successfully implemented to provide manufacturable patterning technology solutions. IBM has addressed these patterning challenges through an integrated Total Patterning Solutions team to provide seamless and synergistic patterning processes to device and integration internal customers. This paper will discuss these challenges and the innovative plasma etch solutions pioneered by IBM and our alliance partners.

  2. Advanced plasma etch technologies for nanopatterning

    NASA Astrophysics Data System (ADS)

    Wise, Rich

    2013-10-01

    Advances in patterning techniques have enabled the extension of immersion lithography from 65/45 nm through 14/10 nm device technologies. A key to this increase in patterning capability has been innovation in the subsequent dry plasma etch processing steps. Multiple exposure techniques, such as litho-etch-litho-etch, sidewall image transfer, line/cut mask, and self-aligned structures, have been implemented to solution required device scaling. Advances in dry plasma etch process control across wafer uniformity and etch selectivity to both masking materials have enabled adoption of vertical devices and thin film scaling for increased device performance at a given pitch. Plasma etch processes, such as trilayer etches, aggressive critical dimension shrink techniques, and the extension of resist trim processes, have increased the attainable device dimensions at a given imaging capability. Precise control of the plasma etch parameters affecting across-design variation, defectivity, profile stability within wafer, within lot, and across tools has been successfully implemented to provide manufacturable patterning technology solutions. IBM has addressed these patterning challenges through an integrated total patterning solutions team to provide seamless and synergistic patterning processes to device and integration internal customers. We will discuss these challenges and the innovative plasma etch solutions pioneered by IBM and our alliance partners.

  3. Dry etching technologies for reflective multilayer

    NASA Astrophysics Data System (ADS)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  4. Method for dry etching of transition metals

    DOEpatents

    Ashby, Carol I. H.; Baca, Albert G.; Esherick, Peter; Parmeter, John E.; Rieger, Dennis J.; Shul, Randy J.

    1998-01-01

    A method for dry etching of transition metals. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorous-containing .pi.-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/.pi.-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the .pi.-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the .pi.-acceptor ligand for forming the volatile transition metal/.pi.-acceptor ligand complex.

  5. The modified SRRS threshold criteria for high peak power laser pulses in long air-path transmission considering the near-field beam quality

    NASA Astrophysics Data System (ADS)

    Zhu, C. Y.; Lin, D. Y.; Lu, Z. W.; Wang, Y. X.; Wang, Z.; Liang, L. X.; Ba, D. X.

    2016-11-01

    This paper demonstrates that the stimulated rotational Raman scattering (SRRS) threshold for high peak power laser pulses propagating through a long air path can be influenced strongly by the near-field quality of the laser beams, and the relationship between the SRRS threshold and the near-field beam quality (i.e., spatial intensity modulation index and contrast ratio) can be evaluated quantitatively. By using our three-dimensional numerical model, which can describe the spatial-temporal evolution behaviors of SRRS and is verified by previously published SRRS experimental data, the criteria of the safe transmission distance for high peak power nanosecond laser pulses are obtained, and the modified SRRS threshold criterion formulas considering the near-field beam conditions are presented.

  6. SAXS study on the morphology of etched and un-etched ion tracks in apatite

    NASA Astrophysics Data System (ADS)

    Nadzri, A.; Schauries, D.; Afra, B.; Rodriguez, M. D.; Mota-Santiago, P.; Muradoglu, S.; Hawley, A.; Kluth, P.

    2015-04-01

    Natural apatite samples were irradiated with 185 MeV Au and 2.3 GeV Bi ions to simulate fission tracks. The resulting track morphology was investigated using synchrotron small angle x-ray scattering (SAXS) measurements before and after chemical etching. We present preliminary results from the SAXS measurement showing the etching process is highly anisotropic yielding faceted etch pits with a 6-fold symmetry. The measurements are a first step in gaining new insights into the correlation between etched and unetched fission tracks and the use of SAXS as a tool for studying etched tracks.

  7. Simulation of Etching Profiles Using Level Sets

    NASA Technical Reports Server (NTRS)

    Hwang, Helen; Govindan, T. R.; Meyyappan, M.; Arnold, James O. (Technical Monitor)

    1998-01-01

    Using plasma discharges to etch trenches and via holes in substrates is an important process in semiconductor manufacturing. Ion enhanced etching involves both neutral fluxes, which are isotropic, and ion fluxes, which are anisotropic. The angular distributions for the ions determines the degree of vertical etch, while the amount of the neutral fluxes determines the etch rate. We have developed a 2D profile evolution simulation which uses level set methods to model the plasma-substrate interface. Using level sets instead of traditional string models avoids the use of complicated delooping algorithms. The simulation calculates the etch rate based on the fluxes and distribution functions of both ions and neutrals. We will present etching profiles of Si substrates in low pressure (10s mTorr) Ar/Cl2 discharges for a variety of incident ion angular distributions. Both ion and neutral re-emission fluxes are included in the calculation of the etch rate, and their contributions to the total etch profile will be demonstrated. In addition, we will show RIE lag effects as a function of different trench aspect ratios. (For sample profiles, please see http://www.ipt.arc.nasa.gov/hwangfig1.html)

  8. Effect of etching time and light source on the bond strength of metallic brackets to ceramic.

    PubMed

    Gonçalves, Paulo Roberto Amaral; Moraes, Rafael Ratto de; Costa, Ana Rosa; Correr, Américo Bortolazzo; Nouer, Paulo Roberto Aranha; Sinhoreti, Mário Alexandre Coelho; Correr-Sobrinho, Lourenço

    2011-01-01

    This study evaluated the bond strength of brackets to ceramic testing different etching times and light sources for photo-activation of the bonding agent. Cylinders of feldspathic ceramic were etched with 10% hydrofluoric acid for 20 or 60 s. After application of silane on the ceramic surface, metallic brackets were bonded to the cylinders using Transbond XT (3M Unitek). The specimens for each etching time were assigned to 4 groups (n=15), according to the light source: XL2500 halogen light, UltraLume 5 LED, AccuCure 3000 argon laser, and Apollo 95E plasma arc. Light-activation was carried out with total exposure times of 40, 40, 20 and 12 s, respectively. Shear strength testing was carried out after 24 h. The adhesive remnant index (ARI) was evaluated under magnification. Data were subjected to two-way ANOVA and Tukey's test (α=0.05). Specimens etched for 20 s presented significantly lower bond strength (p<0.05) compared with those etched for 60 s. No significant differences (p>0.05) were detected among the light sources. The ARI showed a predominance of scores 0 in all groups, with an increase in scores 1, 2 and 3 for the 60 s time. In conclusion, only the etching time had significant influence on the bond strength of brackets to ceramic.

  9. Mechanisms of Hydrocarbon Based Polymer Etch

    NASA Astrophysics Data System (ADS)

    Lane, Barton; Ventzek, Peter; Matsukuma, Masaaki; Suzuki, Ayuta; Koshiishi, Akira

    2015-09-01

    Dry etch of hydrocarbon based polymers is important for semiconductor device manufacturing. The etch mechanisms for oxygen rich plasma etch of hydrocarbon based polymers has been studied but the mechanism for lean chemistries has received little attention. We report on an experimental and analytic study of the mechanism for etching of a hydrocarbon based polymer using an Ar/O2 chemistry in a single frequency 13.56 MHz test bed. The experimental study employs an analysis of transients from sequential oxidation and Ar sputtering steps using OES and surface analytics to constrain conceptual models for the etch mechanism. The conceptual model is consistent with observations from MD studies and surface analysis performed by Vegh et al. and Oehrlein et al. and other similar studies. Parameters of the model are fit using published data and the experimentally observed time scales.

  10. Influence of Etching Mode on Enamel Bond Durability of Universal Adhesive Systems.

    PubMed

    Suzuki, T; Takamizawa, T; Barkmeier, W W; Tsujimoto, A; Endo, H; Erickson, R L; Latta, M A; Miyazaki, M

    2016-01-01

    The purpose of this study was to determine the enamel bond durability of three universal adhesives in different etching modes through fatigue testing. The three universal adhesives used were Scotchbond Universal, Prime&Bond Elect universal dental adhesive, and All-Bond Universal light-cured dental adhesive. A single-step self-etch adhesive, Clearfil S(3) Bond Plus was used as a control. The shear bond strength (SBS) and shear fatigue strength (SFS) to human enamel were evaluated in total-etch mode and self-etch mode. A stainless steel metal ring with an internal diameter of 2.4 mm was used to bond the resin composite to the flat-ground (4000-grit) tooth surfaces for determination of both SBS and SFS. For each enamel surface treatment, 15 specimens were prepared for SBS and 30 specimens for SFS. The staircase method for fatigue testing was then used to determine the SFS of the resin composite bonded to the enamel using 10-Hz frequencies for 50,000 cycles or until failure occurred. Scanning electron microscopy was used to observe representative debonded specimen surfaces and the resin-enamel interfaces. A two-way analysis of variance and the Tukey post hoc test were used for analysis of the SBS data, whereas a modified t-test with Bonferroni correction was used for the SFS data. All adhesives in total-etch mode showed significantly higher SBS and SFS values than those in self-etch mode. Although All-Bond Universal in self-etch mode showed a significantly lower SBS value than the other adhesives, there was no significant difference in SFS values among the adhesives in this mode. All adhesives showed higher SFS:SBS ratios in total-etch mode than in self-etch mode. With regard to the adhesive systems used in this study, universal adhesives showed higher enamel bond strengths in total-etch mode. Although the influence of different etching modes on the enamel-bonding performance of universal adhesives was found to be dependent on the adhesive material, total-etch mode

  11. Etch-a-Sketch Nanoelectronics

    NASA Astrophysics Data System (ADS)

    Levy, Jeremy

    2009-10-01

    The popular children's toy Etch-a-Sketch has motivated the invention of a new material capable of writing and erasing wires so small they approach the spacing between atoms. The interface between two normally insulating materials, strontium titanate and lanthanum aluminate, can be switched between the insulating and conducting state with the use of the sharp metallic probe of an atomic-force microscope. By ``sketching'' this probe in various patterns, one can create electronic materials with remarkably diverse properties. This material system shows promise both for ultra-high density storage and as possible replacements for silicon-based logic (CMOS). This work is supported by the National Science Foundation, Defense Advanced Research Projects Agency, Army Research Office and Air Force Office of Scientific Research.

  12. Nanoscale etching and flattening of metals with ozone water.

    PubMed

    Hatsuki, Ryuji; Yamamoto, Takatoki

    2012-06-13

    Etchants used for metal etching are generally harmful to the environment. We propose an environmentally friendly method that uses ozone water to etch metals. We measured the dependencies of ozone water etching on the temperature and ozone concentration for several metals and evaluated the surface roughness of the etched surfaces. The etching rate was proportional to the dissolved ozone concentration, and the temperature and the surfaces were smoothed by etching.

  13. Mesoporosity in doped silicon nanowires from metal assisted chemical etching monitored by phonon scattering

    NASA Astrophysics Data System (ADS)

    McSweeney, William; Glynn, Colm; Geaney, Hugh; Collins, Gillian; Holmes, Justin D.; O'Dwyer, Colm

    2016-01-01

    Si nanowires (NWs) are shown to develop internal mesoporosity during metal assisted chemical etching from Si wafers. The onset of internal porosity in n+-Si(100) compared to p-Si(100) is examined through a systematic investigation of etching parameters (etching time, AgNO3 concentration, HF % and temperature). Electron microscopy and Raman scattering show that specific etching conditions reduce the size of the internal Si nanocrystallites in the internal mesoporous structure to 3-5 nm. Mesoporous NWs are found to have diameters as large as 500 nm, compared to ˜100 nm for p-NWs that develop surface roughness. Etching of Si (100) wafers results in (100)-oriented NWs forming a three-fold symmetrical surface texture, without internal NW mesoporosity. The vertical etching rate is shown to depend on carrier concentration and degree of internal mesoporosity formation. Raman scattering of the transverse optical phonon and photoluminescence measurements confirm quantum size effects, phonon scattering and visible intense red light emission between 685 and 720 nm in internally mesoporous NWs associated with the etching conditions. Laser power heating of NWs confirms phonon confinement and scattering, which is demonstrated to be a function of the internal mesoporosity development. We also demonstrate the limitation of mesoporosity formation in n+-Si NWs and development of porosity within p-Si NWs by controlling the etching conditions. Lastly, the data confirm that phonon confinement and scattering often reported for Si NWs is due to surface-bound and internal nanostructure, rather than simply a diameter reduction in NW materials.

  14. Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

    SciTech Connect

    Dang, Z. Y.; Breese, M. B. H.; Lin, Y.; Tok, E. S.; Vittone, E.

    2014-05-12

    A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how a low level of lattice amorphization induced by ion irradiation influences anodization. First, it superposes a chemical etching effect, which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences, it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model, which explains all observed effects produced by light ions such as helium and heavy ions such as cesium over a wide range of fluences and irradiation geometries.

  15. Hybrid Laser Processing of Transparent Materials

    NASA Astrophysics Data System (ADS)

    Niino, Hiroyuki

    The following chapter is an overview of processing fused silica and other transparent materials by pulsed-laser irradiation: (1) Direct excitation of materials with multi-wavelength excitation processes, and (2) Media-assisted process with a conventional pulsed laser. A method to etch transparent materials by using laserinduced plasma-assisted ablation (LIPAA), or laser-induced backside wet etching (LIBWE), has been described in detail.

  16. High density plasma etching of magnetic devices

    NASA Astrophysics Data System (ADS)

    Jung, Kee Bum

    Magnetic materials such as NiFe (permalloy) or NiFeCo are widely used in the data storage industry. Techniques for submicron patterning are required to develop next generation magnetic devices. The relative chemical inertness of most magnetic materials means they are hard to etch using conventional RIE (Reactive Ion Etching). Therefore ion milling has generally been used across the industry, but this has limitations for magnetic structures with submicron dimensions. In this dissertation, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma) for the etching of magnetic materials (NiFe, NiFeCo, CoFeB, CoSm, CoZr) and other related materials (TaN, CrSi, FeMn), which are employed for magnetic devices like magnetoresistive random access memories (MRAM), magnetic read/write heads, magnetic sensors and microactuators. This research examined the fundamental etch mechanisms occurring in high density plasma processing of magnetic materials by measuring etch rate, surface morphology and surface stoichiometry. However, one concern with using Cl2-based plasma chemistry is the effect of residual chlorine or chlorinated etch residues remaining on the sidewalls of etched features, leading to a degradation of the magnetic properties. To avoid this problem, we employed two different processing methods. The first one is applying several different cleaning procedures, including de-ionized water rinsing or in-situ exposure to H2, O2 or SF6 plasmas. Very stable magnetic properties were achieved over a period of ˜6 months except O2 plasma treated structures, with no evidence of corrosion, provided chlorinated etch residues were removed by post-etch cleaning. The second method is using non-corrosive gas chemistries such as CO/NH3 or CO2/NH3. There is a small chemical contribution to the etch mechanism (i.e. formation of metal carbonyls) as determined by a comparison with Ar and N2 physical sputtering. The discharge should be NH3

  17. Study of microstructure and silicon segregation in cast iron using color etching and electron microprobe analysis

    SciTech Connect

    Vazehrad, S.; Diószegi, A.

    2015-06-15

    An investigation on silicon segregation of lamellar, compacted and nodular graphite iron was carried out by applying a selective, immersion color etching and a modified electron microprobe to study the microstructure. The color etched micrographs of the investigated cast irons by revealing the austenite phase have provided data about the chronology and mechanism of microstructure formation. Moreover, electron microprobe has provided two dimensional segregation maps of silicon. A good agreement was found between the segregation profile of silicon in the color etched microstructure and the silicon maps achieved by electron microprobe analysis. However, quantitative silicon investigation was found to be more accurate than color etching results to study the size of the eutectic colonies. - Highlights: • Sensitivity of a color etchant to silicon segregation is quantitatively demonstrated. • Si segregation measurement by EMPA approved the results achieved by color etching. • Color etched micrographs provided data about solidification mechanism in cast irons. • Austenite grain boundaries were identified by measuring the local Si concentration.

  18. Silver ion mediated shape control of platinum nanoparticles: Removal of silver by selective etching leads to increased catalytic activity

    SciTech Connect

    Grass, Michael E.; Yue, Yao; Habas, Susan E.; Rioux, Robert M.; Teall, Chelsea I.; Somorjai, G.A.

    2008-01-09

    A procedure has been developed for the selective etching of Ag from Pt nanoparticles of well-defined shape, resulting in the formation of elementally-pure Pt cubes, cuboctahedra, or octahedra, with a largest vertex-to-vertex distance of {approx}9.5 nm from Ag-modified Pt nanoparticles. A nitric acid etching process was applied Pt nanoparticles supported on mesoporous silica, as well as nanoparticles dispersed in aqueous solution. The characterization of the silica-supported particles by XRD, TEM, and N{sub 2} adsorption measurements demonstrated that the structure of the nanoparticles and the mesoporous support remained conserved during etching in concentrated nitric acid. Both elemental analysis and ethylene hydrogenation indicated etching of Ag is only effective when [HNO{sub 3}] {ge} 7 M; below this concentration, the removal of Ag is only {approx}10%. Ethylene hydrogenation activity increased by four orders of magnitude after the etching of Pt octahedra that contained the highest fraction of silver. High-resolution transmission electron microscopy of the unsupported particles after etching demonstrated that etching does not alter the surface structure of the Pt nanoparticles. High [HNO{sub 3}] led to the decomposition of the capping agent, polyvinylpyrollidone (PVP); infrared spectroscopy confirmed that many decomposition products were present on the surface during etching, including carbon monoxide.

  19. Modified surface morphology in surface ablation of cobalt-cemented tungsten carbide with pulsed UV laser radiation

    NASA Astrophysics Data System (ADS)

    Li, Tiejun; Lou, Qihong; Dong, Jingxing; Wei, Yunrong; Liu, Jingru

    2001-03-01

    Surface ablation of cobalt-cemented tungsten carbide hardmetal has been carried out in this work using a 308 nm, 20 ns XeCl excimer laser. The influence of ablation rate, surface roughness, surface micromorphology as well as surface phase structure on laser conditions including laser irradiance and pulse number have been investigated. The experimental results showed that the ablation rate and surface roughness were controlled by varying the number of pulses and laser irradiance. The microstructure and crystalline structure of irradiated surface layer varied greatly with different laser conditions. After 300 shots of laser irradiation at irradiance of 125 MW/cm 2, the surface micromorphology characterizing a uniform framework pattern of "hill-valleys". With the increment of laser shots at laser irradiance of 125 MW/cm 2, the microstructure of cemented tungsten carbide transformed from original polygon grains with the size of 3 μm to interlaced large and long grains after 300 shots of laser irradiation, and finally to gross grains with the size of 10 μm with clear grain boundaries after 700 shots. The crystalline structure of irradiated area has partly transformed from original WC to β-WC 1- x, then to α-W 2C and CW 3, and finally to W crystal. At proper laser irradiance and pulse number, cobalt binder has been selectively removed from the surface layer of hardmetal. It has been demonstrated that surface ablation with pulsed UV laser should be a feasible way to selectively remove cobalt binder from surface layer of cemented tungsten carbide hardmetal.

  20. Nanoparticle-based etching of silicon surfaces

    DOEpatents

    Branz, Howard [Boulder, CO; Duda, Anna [Denver, CO; Ginley, David S [Evergreen, CO; Yost, Vernon [Littleton, CO; Meier, Daniel [Atlanta, GA; Ward, James S [Golden, CO

    2011-12-13

    A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

  1. Galvanic etch stop for Si in KOH

    NASA Astrophysics Data System (ADS)

    Connolly, E. J.; French, P. J.; Xia, X. H.; Kelly, J. J.

    2004-08-01

    Etch stops and etch-stopping techniques are essential 'tools' for 2D and 3D MEMS devices. Until now, use of a galvanic etch stop (ES) for micromachining in alkaline solutions was usually prohibited due to the large Au:Si area needed and/or high oxygen content required to achieve the ES. We report a new galvanic ES which requires a Au:exposed silicon area ratio of only ~1. Thus for the first time a practical galvanic ES for KOH has been achieved. The ES works by adding small amounts of sodium hypochlorite, NaOCl, to KOH solutions. Essentially the NaOCl increases the oxygen content in the KOH etchant. The dependancy of the galvanic ES on KOH concentration and temperature is investigated. Also, we report on the effects of the added NaOCl on etch rates. SEM images are used to examine the galvanically etch-stopped membranes and their surface morphology. For 33% KOH solutions the galvanic etch stop worked well, producing membranes with uniform thickness ~6 µm (i.e. slightly greater than the deposited epilayer). For 20% KOH solutions, the galvanic etch stop still worked, but the resulting membranes were a little thicker (~10 µm).

  2. Fe-catalyzed etching of graphene layers

    NASA Astrophysics Data System (ADS)

    Cheng, Guangjun; Calizo, Irene; Hight Walker, Angela; PML, NIST Team

    We investigate the Fe-catalyzed etching of graphene layers in forming gas. Fe thin films are deposited by sputtering onto mechanically exfoliated graphene, few-layer graphene (FLG), and graphite flakes on a Si/SiO2 substrate. When the sample is rapidly annealed in forming gas, particles are produced due to the dewetting of the Fe thin film and those particles catalyze the etching of graphene layers. Monolayer graphene and FLG regions are severely damaged and that the particles catalytically etch channels in graphite. No etching is observed on graphite for the Fe thin film annealed in nitrogen. The critical role of hydrogen indicates that this graphite etching process is catalyzed by Fe particles through the carbon hydrogenation reaction. By comparing with the etched monolayer and FLG observed for the Fe film annealed in nitrogen, our Raman spectroscopy measurements identify that, in forming gas, the catalytic etching of monolayer and FLG is through carbon hydrogenation. During this process, Fe particles are catalytically active in the dissociation of hydrogen into hydrogen atoms and in the production of hydrogenated amorphous carbon through hydrogen spillover.

  3. Etch Characteristics of GaN using Inductively Coupled Cl2 Plasma Etching

    NASA Astrophysics Data System (ADS)

    Rosli, Siti Azlina; Aziz, A. Abdul

    2008-05-01

    In this study, the plasma characteristics and GaN etch properties of inductively coupled Cl2/Ar plasmas were investigated. It has shown that the results of a study of inductively coupled plasma (ICP) etching of gallium nitride by using Cl2/Ar is possible to meet the requirement (anisotropy, high etch rate and high selectivity), simultaneously. We have investigated the etching rate dependency on the percentage of Argon in the gas mixture, the total pressure and DC voltage. We found that using a gas mixture with 20 sccm of Ar, the optimum etch rate of GaN was achieved. The etch rate were found to increase with voltage, attaining a maximum rate 2500 Å/min at -557 V. The addition of an inert gas, Ar is found to barely affect the etch rate. Surface morphology of the etched samples was verified by scanning electron microscopy and atomic force microscopy. It was found that the etched surface was anisotropic and the smoothness of the etched surface is comparable to that of polished wafer.

  4. Lasers.

    PubMed

    Passeron, T

    2012-12-01

    Lasers are a very effective approach for treating many hyperpigmented lesions. They are the gold standard treatment for actinic lentigos and dermal hypermelanocytosis, such as Ota nevus. Becker nevus, hyperpigmented mosaicisms, and lentigines can also be successfully treated with lasers, but they could be less effective and relapses can be observed. However, lasers cannot be proposed for all types of hyperpigmentation. Thus, freckles and café-au-lait macules should not be treated as the relapses are nearly constant. Due to its complex pathophysiology, melasma has a special place in hyperpigmented dermatoses. Q-switched lasers (using standard parameters or low fluency) should not be used because of consistent relapses and the high risk of post-inflammatory hyperpigmentation. Paradoxically, targeting the vascular component of the melasma lesion with lasers could have a beneficial effect. However, these results have yet to be confirmed. In all cases, a precise diagnosis of the type of hyperpigmentation is mandatory before any laser treatment, and the limits and the potential side effects of the treatment must be clearly explained to patients.

  5. [Lasers].

    PubMed

    Passeron, T

    2012-11-01

    Lasers are a very effective approach for treating many hyperpigmented lesions. They are the gold standard treatment for actinic lentigos and dermal hypermelanocytosis, such as Ota nevus. Becker nevus, hyperpigmented mosaicisms, and lentigines can also be successfully treated with lasers, but they could be less effective and relapses can be observed. However, lasers cannot be proposed for all types of hyperpigmentation. Thus, freckles and café-au-lait macules should not be treated as the relapses are nearly constant. Due to its complex pathophysiology, melasma has a special place in hyperpigmented dermatoses. Q-switched lasers (using standard parameters or low fluency) should not be used because of consistent relapses and the high risk of post-inflammatory hyperpigmentation. Paradoxically, targeting the vascular component of the melasma lesion with lasers could have a beneficial effect. However, these results have yet to be confirmed. In all cases, a precise diagnosis of the type of hyperpigmentation is mandatory before any laser treatment, and the limits and the potential side effects of the treatment must be clearly explained to patients.

  6. Plasma chemical modification of track-etched membrane surface layer for improvement of their biomedical properties

    NASA Astrophysics Data System (ADS)

    Kravets, Liubov I.; Ryazantseva, Tatyana V.

    2013-12-01

    The morphological and clinical studies of poly(ethylene terephthalate) track-etched membrane modified by plasma of non-polymerizing gases as drainage materials for antiglaucomatous operations were performed. It was demonstrated their compatibility with eye tissues. Moreover, it was shown that a new drainage has a good lasting hypotensive effect and can be used as operation for refractory glaucoma surgery.

  7. Enzymatic degradation of adhesive-dentin interfaces produced by mild self-etch adhesives.

    PubMed

    De Munck, Jan; Mine, Atsushi; Van den Steen, Philippe E; Van Landuyt, Kirsten L; Poitevin, André; Opdenakker, Ghislain; Van Meerbeek, Bart

    2010-10-01

    Endogenous matrix metalloproteinases (MMPs) released by adhesive procedures may degrade collagen in the hybrid layer and so compromise the bonding effectiveness of etch-and-rinse adhesives. In this study, endogenous enzymatic degradation was evaluated for several simplified self-etch adhesives. In addition, primers were modified by adding two MMP inhibitors: chlorhexidine, a commonly used disinfectant, but also a non-specific MMP inhibitor; and SB-3CT, a specific inhibitor of MMP-2 and MMP-9. Gelatin zymography of fresh human dentin powder was used to identify the enzymes released by the adhesives. Micro-tensile bond strength (μTBS) testing was used to assess the mechanical properties of resin-dentin interfaces over time. In none of the experimental groups treated with the mild self-etch adhesives was MMP-2 and/or MMP-9 identified. Also, no difference in the μTBS was measured for the inhibitor-modified and the control inhibitor-free adhesives after 6 months of water storage. It is concluded that in contrast to etch-and-rinse adhesives, the involvement of endogenous MMP-2 and MMP-9 in the bond-degradation process is minimal for mild self-etch adhesives.

  8. Method of sputter etching a surface

    DOEpatents

    Henager, Jr., Charles H.

    1984-01-01

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion.

  9. Method of sputter etching a surface

    DOEpatents

    Henager, C.H. Jr.

    1984-02-14

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion. 4 figs.

  10. Electroless epitaxial etching for semiconductor applications

    DOEpatents

    McCarthy, Anthony M.

    2002-01-01

    A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.

  11. Laser labeling, a safe technology to label produce

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Labeling of the produce has gained marked attention in recent years. Laser labeling technology involves the etching of required information on the surface using a low energy CO2 laser beam. The etching forms alphanumerical characters by pinhole dot matrix depressions. These openings can lead to wat...

  12. Etch proximity correction through machine-learning-driven etch bias model

    NASA Astrophysics Data System (ADS)

    Shim, Seongbo; Shin, Youngsoo

    2016-03-01

    Accurate prediction of etch bias has become more important as technology node shrinks. A simulation is not feasible solution in full chip level due to excessive runtime, so etch proximity correction (EPC) often relies on empirically obtained rules or models. However, simple rules alone cannot accurately correct various pattern shapes, and a few empirical parameters in model-based EPC is still not enough to achieve satisfactory OCV. We propose a new approach of etch bias modeling through machine learning (ML) technique. A segment of interest (and its surroundings) are characterized by some geometric and optical parameters, which are received by an artificial neural network (ANN), which then outputs predicted etch bias of the segment. The ANN is used as our etch bias model for new EPC, which we propose in this paper. The new etch bias model and EPC are implemented in commercial OPC tool and demonstrated using 20nm technology DRAM gate layer.

  13. Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

    DOEpatents

    Ashby, Carol I. H.; Myers, David R.

    1992-01-01

    The minority carrier lifetime is significantly much shorter in semiconductor materials with very high impurity concentrations than it is in semiconductor materials with lower impurity concentration levels. This phenomenon of reduced minority carrier lifetime in semiconductor materials having high impurity concentration is utilized to advantage for permitting highly selective semiconductor material etching to be achieved using a carrier-driven photochemical etching reaction. Various means may be employed for increasing the local impurity concentration level in specific near-surface regions of a semiconductor prior to subjecting the semiconductor material to a carrier-driven photochemical etching reaction. The regions having the localized increased impurity concentration form a self-aligned mask inhibiting photochemical etching at such localized regions while the adjacent regions not having increased impurity concentrations are selectively photochemically etched. Liquid- or gas-phase etching may be performed.

  14. Freeze fracture and freeze etching.

    PubMed

    Chandler, Douglas E; Sharp, William P

    2014-01-01

    Freeze fracture depends on the property of frozen tissues or cells, when cracked open, to split along the hydrophobic interior of membranes, thus revealing broad panoramas of membrane interior. These large panoramas reveal the three-dimensional contours of membranes making the methods well suited to studying changes in membrane architecture. Freshly split membrane faces are visualized by platinum or tungsten shadowing and carbon backing to form a replica that is then cleaned of tissue and imaged by TEM. Etching, i.e., removal of ice from the frozen fractured specimen by sublimation prior to shadowing, can also reveal the true surfaces of the membrane as well as the extracellular matrix and cytoskeletal networks that contact the membranes. Since the resolution of detail in the metal replicas formed is 1-2 nm, these methods can also be used to visualize macromolecules or macromolecular assemblies either in situ or displayed on a mica surface. These methods are available for either specimens that have been chemically fixed or specimens that have been rapidly frozen without chemical intervention.

  15. Metal assisted anodic etching of silicon

    NASA Astrophysics Data System (ADS)

    Lai, Chang Quan; Zheng, Wen; Choi, W. K.; Thompson, Carl V.

    2015-06-01

    Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P+-type and N+-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P+-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N+-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si.Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P+-type and N+-type Si wafers and a wide range of nanostructure morphologies were observed

  16. Black Germanium fabricated by reactive ion etching

    NASA Astrophysics Data System (ADS)

    Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

    2016-09-01

    A reactive ion etching technique for the preparation of statistical "Black Germanium" antireflection surfaces, relying on self-organization in a Cl2 etch chemistry, is presented. The morphology of the fabricated Black Germanium surfaces is the result of a random lateral distribution of pyramidal etch pits with heights around (1450 ± 150) nm and sidewall angles between 80° and 85°. The pyramids' base edges are oriented along the <110> crystal directions of Germanium, indicating a crystal anisotropy of the etching process. In the Vis-NIR, the tapered Black Germanium surface structure suppresses interface reflection to <2.5 % for normal incidence and still to <6 % at an angle of incidence of 70°. The presented Black Germanium might find applications as low-cost AR structure in optoelectronics and IR optics.

  17. Epoxy bond and stop etch fabrication method

    DOEpatents

    Simmons, Jerry A.; Weckwerth, Mark V.; Baca, Wes E.

    2000-01-01

    A class of epoxy bond and stop etch (EBASE) microelectronic fabrication techniques is disclosed. The essence of such techniques is to grow circuit components on top of a stop etch layer grown on a first substrate. The first substrate and a host substrate are then bonded together so that the circuit components are attached to the host substrate by the bonding agent. The first substrate is then removed, e.g., by a chemical or physical etching process to which the stop etch layer is resistant. EBASE fabrication methods allow access to regions of a device structure which are usually blocked by the presence of a substrate, and are of particular utility in the fabrication of ultrafast electronic and optoelectronic devices and circuits.

  18. Semiconductor structure and recess formation etch technique

    DOEpatents

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  19. Matrix-assisted laser desorption ionization time-of-flight mass spectrometry: a powerful tool for the mass and sequence analysis of natural and modified oligonucleotides.

    PubMed Central

    Pieles, U; Zürcher, W; Schär, M; Moser, H E

    1993-01-01

    We report the analysis and characterization of natural and modified oligonucleotides by matrix-assisted laser desorption ionization time-of-flight mass spectrometry (MALDI-TOF MS). The present technology was highly improved for this class of compounds by using a new matrix, 2,4,6-trihydroxy acetophenone, together with di- and triammonium salts of organic or inorganic acids to suppress peak broadening due to multiple ion adducts. This methodology can be used in combination with time dependent degradation of oligonucleotides by exonucleases as powerful tool to determine sequence compositions. PMID:8341593

  20. Method for anisotropic etching in the manufacture of semiconductor devices

    DOEpatents

    Koontz, Steven L.; Cross, Jon B.

    1993-01-01

    Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by atomic oxygen beams (translational energies of 0.2-20 eV, preferably 1-10 eV). Etching with hyperthermal (kinetic energy>1 eV) oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask-protected areas.

  1. Method for anisotropic etching in the manufacture of semiconductor devices

    NASA Technical Reports Server (NTRS)

    Koontz, Steven L. (Inventor); Cross, Jon B. (Inventor)

    1993-01-01

    Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by hyperthermal atomic oxygen beams (translational energies of 0.2 to 20 eV, preferably 1 to 10 eV). Etching with hyperthermal oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask protected areas.

  2. Metal assisted anodic etching of silicon.

    PubMed

    Lai, Chang Quan; Zheng, Wen; Choi, W K; Thompson, Carl V

    2015-07-07

    Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P(+)-type and N(+)-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P(+)-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N(+)-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si.

  3. Plasma/Neutral-Beam Etching Apparatus

    NASA Technical Reports Server (NTRS)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  4. Process for etching mixed metal oxides

    DOEpatents

    Ashby, C.I.H.; Ginley, D.S.

    1994-10-18

    An etching process is described using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstrom range may be achieved by this method. 1 fig.

  5. Process for etching mixed metal oxides

    DOEpatents

    Ashby, Carol I. H.; Ginley, David S.

    1994-01-01

    An etching process using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstom range may be achieved by this method.

  6. Dislocation Etching Solutions for Mercury Cadmium Selenide

    DTIC Science & Technology

    2014-09-01

    Dislocation Etching Solutions for Mercury Cadmium Selenide by Kevin Doyle and Sudhir Trivedi ARL-CR-0744 September 2014...Etching Solutions for Mercury Cadmium Selenide Kevin Doyle and Sudhir Trivedi Sensors and Electron Devices Directorate, ARL prepared by...Solutions for Mercury Cadmium Selenide 5a. CONTRACT NUMBER W811NF-12-2-0019 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Kevin Doyle and

  7. Plasma etching: Yesterday, today, and tomorrow

    SciTech Connect

    Donnelly, Vincent M.; Kornblit, Avinoam

    2013-09-15

    The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

  8. Investigation of Nitride Morphology After Self-Aligned Contact Etch

    NASA Technical Reports Server (NTRS)

    Hwang, Helen H.; Keil, J.; Helmer, B. A.; Chien, T.; Gopaladasu, P.; Kim, J.; Shon, J.; Biegel, Bryan (Technical Monitor)

    2001-01-01

    Self-Aligned Contact (SAC) etch has emerged as a key enabling technology for the fabrication of very large-scale memory devices. However, this is also a very challenging technology to implement from an etch viewpoint. The issues that arise range from poor oxide etch selectivity to nitride to problems with post etch nitride surface morphology. Unfortunately, the mechanisms that drive nitride loss and surface behavior remain poorly understood. Using a simple langmuir site balance model, SAC nitride etch simulations have been performed and compared to actual etched results. This approach permits the study of various etch mechanisms that may play a role in determining nitride loss and surface morphology. Particle trajectories and fluxes are computed using Monte-Carlo techniques and initial data obtained from double Langmuir probe measurements. Etched surface advancement is implemented using a shock tracking algorithm. Sticking coefficients and etch yields are adjusted to obtain the best agreement between actual etched results and simulated profiles.

  9. R2O3 (R = La, Y) modified erbium activated germanate glasses for mid-infrared 2.7 μm laser materials

    NASA Astrophysics Data System (ADS)

    Cai, Muzhi; Zhou, Beier; Wang, Fengchao; Wei, Tao; Tian, Ying; Zhou, Jiajia; Xu, Shiqing; Zhang, Junjie

    2015-08-01

    Er3+ activated germanate glasses modified by La2O3 and Y2O3 with good thermal stability were prepared. 2.7 μm fluorescence was observed and corresponding radiative properties were investigated. A detailed discussion of J-O parameters has been carried out based on absorption spectra and Judd-Ofelt theory. The peak emission cross sections of La2O3 and Y2O3 modified germanate glass are (14.3 ± 0.10) × 10-21 cm2 and (15.4 ± 0.10) × 10-21 cm2, respectively. Non-radiative relaxation rate constants and energy transfer coefficients of 4I11/2 and 4I13/2 levels have been obtained and discussed to understand the 2.7 μm fluorescence behavior. Moreover, the energy transfer processes of 4I11/2 and 4I13/2 level were quantitatively analyzed according to Dexter’s theory and Inokuti-Hirayama model. The theoretical calculations are in good agreement with the observed 2.7 μm fluorescence phenomena. Results demonstrate that the Y2O3 modified germanate glass, which possesses more excellent spectroscopic properties than La2O3 modified germanate glass, might be an attractive candidate for mid-infrared laser.

  10. R2O3 (R = La, Y) modified erbium activated germanate glasses for mid-infrared 2.7 μm laser materials

    PubMed Central

    Cai, Muzhi; Zhou, Beier; Wang, Fengchao; Wei, Tao; Tian, Ying; Zhou, Jiajia; Xu, Shiqing; Zhang, Junjie

    2015-01-01

    Er3+ activated germanate glasses modified by La2O3 and Y2O3 with good thermal stability were prepared. 2.7 μm fluorescence was observed and corresponding radiative properties were investigated. A detailed discussion of J–O parameters has been carried out based on absorption spectra and Judd–Ofelt theory. The peak emission cross sections of La2O3 and Y2O3 modified germanate glass are (14.3 ± 0.10) × 10−21 cm2 and (15.4 ± 0.10) × 10−21 cm2, respectively. Non-radiative relaxation rate constants and energy transfer coefficients of 4I11/2 and 4I13/2 levels have been obtained and discussed to understand the 2.7 μm fluorescence behavior. Moreover, the energy transfer processes of 4I11/2 and 4I13/2 level were quantitatively analyzed according to Dexter’s theory and Inokuti–Hirayama model. The theoretical calculations are in good agreement with the observed 2.7 μm fluorescence phenomena. Results demonstrate that the Y2O3 modified germanate glass, which possesses more excellent spectroscopic properties than La2O3 modified germanate glass, might be an attractive candidate for mid-infrared laser. PMID:26279092

  11. Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

    PubMed Central

    Kleinschmidt, Ann-Kathrin; Barzen, Lars; Strassner, Johannes; Doering, Christoph; Bock, Wolfgang; Wahl, Michael; Kopnarski, Michael

    2016-01-01

    Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of secondary ion mass spectrometry (SIMS) reveals a deviation of only about 4 nm in optimal cases. To illustrate the applicability of the reported method in every day settings for the first time the highly etch depth sensitive lithographic process to form a film lens on the waveguide ridge of a broad area laser (BAL) is presented. This example elucidates the benefits of the method in semiconductor device fabrication and also suggests how to fulfill design requirements for the sample in order to make RAS control possible. PMID:28144528

  12. Wavelength Dependence of UV Effect on Etch Rate and Noise in CR-39

    NASA Astrophysics Data System (ADS)

    Wiesner, Micah; Traynor, Nathan; McLean, James; Padalino, Stephen; Sangster, Craig; McCluskey, Michelle

    2014-10-01

    The use of CR-39 plastic as a SSNTD is an effective technique for recovering data in high-energy particle experiments including inertial confinement fusion. To reveal particle tracks after irradiation, CR-39 is chemically etched at elevated temperatures with NaOH, producing signal pits at the nuclear track sites that are measurable by an optical microscope. CR-39 pieces also exhibit etch-induced noise, either surface roughness or pit-like features not caused by nuclear particles, which negatively affects the ability of observers to distinguish actual pits. When CR-39 is exposed to high intensity UV light after nuclear irradiation and before etching, an increase in etch rates and pit diameters is observed. UV exposure can also increase noise, which in the extreme can distort the shapes of particle pits. Analyzing the effects of different wavelengths in the UV spectrum we have determined that light of the wavelength 255 nm increases etch rates and pit diameters while causing less background noise than longer UV wavelengths. Preliminary research indicates that heating CR-39 to elevated temperatures (~80 °C) during UV exposure also improves the signal-to-noise ratio for this process. Funded in part by a grant from the DOE through the Laboratory for Laser Energetics.

  13. Effect of addition of chitosan to self-etching primer: antibacterial activity and push-out bond strength to radicular dentin

    PubMed Central

    Elsaka, Shaymaa; Elnaghy, Amr

    2012-01-01

    The purpose of this study was to evaluate the antibacterial activity of a modified self-etching primer incorporating chitosan and whether this modification affected the bond strength to radicular dentin. A modified self-etching primer was prepared by adding chitosan solutions at 0.03%, 0.06%, 0.12% and 0.25% (W/W) to RealSeal selfe-tching primer. RealSeal primer without chitosan was used as the control. The antibacterial activity of the modified self-etching primer was evaluated using the direct contact test against Enterococcus faecalis. The bonding ability of the RealSeal system to radicular dentin was evaluated using the push-out bond strength test. The modes of failure were examined under a stereomicroscope. Data were analyzed using analysis of variance (ANOVA) and Tukey's test, with a P-value < 0.05 indicating statistical significance. The results showed that the antibacterial properties of the freshly prepared and aged modified self-etching primer incorporating chitosan exhibited potent antibacterial effect against Enterococcus faecalis compared with the unmodified primer. The RealSeal system with the aged modified self-etching primer incorporating chitosan showed no significant differences in the bond strength as compared with the control (P = 0.99). The findings suggest that modified self-etching primer incorporating chitosan is a promising antibacterial primer which does not adversely affect the bond strength of the RealSeal system to radicular dentin. PMID:23554762

  14. Effects of laser labeling on the quality of citrus fruit during storage

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Etching the required information on fruit and vegetables is an alternative means to label produce. Low energy CO2 laser etches the surface showing the contrasting underlying layer. These etched surfaces can promote water loss and potentially allow for pathogen entry. Studies were conducted to measur...

  15. Effects of laser labeling on the quality of tangerines during storage

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Etching the required information on fruit and vegetables is an alternative means to label produce. Low energy CO2 laser etches the surface showing the contrasting underlying layer. These etched surfaces can promote water loss and potentially allow for pathogen entry. Studies were conducted to measur...

  16. Laser labeling and its effect on the storage quality of citrus fruits

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Etching the required information on the skins of fruits and vegetables is an alternative way to label produce. A low energy CO2 laser beam etches the outermost layer of the epidermis revealing the contrasting underneath layer while forming alphanumerical characters. These etched areas represent brea...

  17. In vitro fibroblast and pre-osteoblastic cellular responses on laser surface modified Ti-6Al-4V.

    PubMed

    Chikarakara, Evans; Fitzpatrick, Patricia; Moore, Eric; Levingstone, Tanya; Grehan, Laura; Higginbotham, Clement; Vázquez, Mercedes; Bagga, Komal; Naher, Sumsun; Brabazon, Dermot

    2014-12-29

    The success of any implant, dental or orthopaedic, is driven by the interaction of implant material with the surrounding tissue. In this context, the nature of the implant surface plays a direct role in determining the long term stability as physico-chemical properties of the surface affect cellular attachment, expression of proteins, and finally osseointegration. Thus to enhance the degree of integration of the implant into the host tissue, various surface modification techniques are employed. In this work, laser surface melting of titanium alloy Ti-6Al-4V was carried out using a CO2 laser with an argon gas atmosphere. Investigations were carried out to study the influence of laser surface modification on the biocompatibility of Ti-6Al-4V alloy implant material. Surface roughness, microhardness, and phase development were recorded. Initial knowledge of these effects on biocompatibility was gained from examination of the response of fibroblast cell lines, which was followed by examination of the response of osteoblast cell lines which is relevant to the applications of this material in bone repair. Biocompatibility with these cell lines was analysed via Resazurin cell viability assay, DNA cell attachment assay, and alamarBlue metabolic activity assay. Laser treated surfaces were found to preferentially promote cell attachment, higher levels of proliferation, and enhanced bioactivity when compared to untreated control samples. These results demonstrate the tremendous potential of this laser surface melting treatment to significantly improve the biocompatibility of titanium implants in vivo.

  18. Variation of cell spreading on TiO2 film modified by 775 nm and 388 nm femtosecond laser irradiation

    NASA Astrophysics Data System (ADS)

    Tsukamoto, M.; Shinonaga, T.; Sato, Y.; Chen, P.; Nagai, A.; Hanawa, T.

    2014-03-01

    Titanium (Ti) is one of the most used biomaterials in metals. However, Ti is typically artificial materials. Thus, it is necessary for improving the biocompatibility of Ti. Recently, coating of the titanium dioxides (TiO2) film on Ti plate has been proposed to improve biocompatibility of Ti. We have developed coating method of the film on Ti plate with an aerosol beam. Periodic structures formation on biomaterials was also a useful method for improving the biocompatibility. Direction of cell spreading might be controlled along the grooves of periodic microstructures. In our previous study, periodic nanostructures were formed on the film by femtosecond laser irradiation at fundamental wave (775 nm). Period of the periodic nanostructures was about 230 nm. In cell test, cell spreading along the grooves of the periodic nanostructures was observed although it was not done for the film without the periodic nanostructures. Then, influence of the period of the periodic nanostructures on cell spreading has not been investigated yet. The period might be changed by changing the laser wavelength. In this study, the periodic nanostructures were created on the film with femtosecond laser at 775nm and 388 nm, respectively. After cell test, cell spreading along the grooves of the periodic nanostructures was observed on 775 nm and 388nm laser irradiated areas. Distribution of direction of cell spreading on laser irradiated area was also examined. These results suggested that controlling the cell spreading on periodic nanostructures with period of 230 nm was better than that with period of 130 nm.

  19. Incremental chemical etching of CR-39 detectors for nondispersive proton spectroscopy with high resolution

    NASA Astrophysics Data System (ADS)

    Gong, Chao; Tochitsky, Sergei; Haberberger, Dan; Joshi, Chan

    2011-10-01

    Experiments on shock wave proton acceleration in a hydrogen gas plasma using multi-terawatt CO2 laser have produced ~20MeV proton beams with a narrow energy spread [D.Haberberger et al, Proceedings of PAC2011, New York, Paper TuOBN6]. The laser-accelerated proton beam is detected by a stack of 1 mm thick CR-39 with a 100 ×100 mm2 area. This nondispersive imaging spectrometer, located at 150 mm from the plasma,provided a superb spatial resolution but its spectral resolution was limited due to the 1 mm CR-39 thickness. In order to increase the spectral resolution, the incremental layer etching technique has been developed and tested using a computer control system for proton pits counting and analysis. Using this etching technique we reached spectral resolution <= 60 KeV per etching step and confirmed the generation of mono-energetic proton beam centered around 20MeV with an energy spread dE/E around 1%. Results on bulk etching rate and proton related track size evolution as well as limitations of this method will be presented. This work was supported by DOE grant DE-FG03-92ER40727.

  20. A in Situ Study of Plasma Etching Surface Chemistry Using Reflection Infrared Spectroscopy

    NASA Astrophysics Data System (ADS)

    Lucchesi, Robert Peter

    Plasma etching is an important process in semiconductor manufacturing. The present work describes a means by which plasma etching surface chemistry may be studied in situ. The systems of interest were the sulfur hexafluoride plasma etching of silicon and tungsten in a diode reactor. A reflection infrared spectrometer was designed and constructed to be able to scan the frequency region from about 550cm ^{-1} to 1300cm ^{-1}, and a plasma etch reactor was modified to allow access to the infrared beam. Reflection infrared spectroscopy (RIS) allows the measurement of light absorbed by molecules adsorbed on a reflective surface selectively from light absorbed by molecules in the gas phase. RIS applied to heavily doped silicon substrates had limited success. While sulfur fluorine species were detected on the surface during plasma etching, no silicon fluorine species were ever detected. The sulfur fluorine species (referred to as SF_{rm x}) were not seen under any circumstances in the absence of an SF_6 plasma. Severe baseline drift of the infrared spectrometer during plasma etching was the main reason for the limited success. However, the results were significant in that they demonstrated the presence of sulfur fluorine species during the plasma etching of silicon in an SF_6 plasma. The baseline drift problems experienced with silicon were not found when tungsten was studied. The same SF _{rm x} feature detected on silicon was also found on tungsten during etching in an SF_6 plasma, but was never seen in the absence of the plasma. A detailed experimental and theoretical study was performed to show that the surface absorption feature seen was actually due to SF _{rm x} adsorbed on the surface. A hysteresis behavior was observed in the SF_ {rm x} concentration as the plasma power was ramped up and subsequently decreased. Finally, it could not be concluded if SF_{rm x} participated in the etch reaction by fluorinating the tungsten surface, but the presence of SF_ {rm x} on

  1. The Effects of Using a Commercial Grade Plasma Etching Chamber to Etch Anodized Niobium Surfaces

    NASA Astrophysics Data System (ADS)

    Epperson, Christiana; Drake, Dereth; Winska, Kalina

    2015-11-01

    Anodized niobium surfaces are used in particle accelerators for construction of the superconducting cavities. These surfaces must be cleaned regularly to remove containments and maintain the surface smoothness. The most common method used is that of chemically etching the surface using acid baths; however, this process can affect the smoothness of the layer and is extremely time consuming and hazardous. Plasma etching is one alternative that has shown great promise. We are using a commercial grade plasma etching chamber to clean anodized niobium samples that have varying oxide layer thicknesses. Spectral profiles of the surfaces of the samples are taken before and after etching. All measured results are compared to a simple theoretical model in order to determine the effects of the etching process on each surface.

  2. Dry etched SiO2 Mask for HgCdTe Etching Process

    NASA Astrophysics Data System (ADS)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  3. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

    NASA Astrophysics Data System (ADS)

    Nakazaki, Nobuya; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-12-01

    Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy Ei, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on Ei: one is the roughening mode at low Ei < 200-300 eV, where the root-mean-square (rms) roughness of etched surfaces increases with increasing Ei, exhibiting an almost linear increase with time during etching (t < 20 min). The other is the smoothing mode at higher Ei, where the rms surface roughness decreases substantially with Ei down to a low level < 0.4 nm, exhibiting a quasi-steady state after some increase at the initial stage (t < 1 min). Correspondingly, two different behaviors depending on Ei were also observed in the etch rate versus √{Ei } curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing Ei were found to correspond to changes in the predominant ion flux from feed gas ions Clx+ to ionized etch products SiClx+ caused by the increased etch rates at increased Ei, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors.

  4. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

    SciTech Connect

    Nakazaki, Nobuya Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-12-14

    Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl{sub 2} plasmas, as a function of rf bias power or ion incident energy E{sub i}, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on E{sub i}: one is the roughening mode at low E{sub i} < 200–300 eV, where the root-mean-square (rms) roughness of etched surfaces increases with increasing E{sub i}, exhibiting an almost linear increase with time during etching (t < 20 min). The other is the smoothing mode at higher E{sub i}, where the rms surface roughness decreases substantially with E{sub i} down to a low level < 0.4 nm, exhibiting a quasi-steady state after some increase at the initial stage (t < 1 min). Correspondingly, two different behaviors depending on E{sub i} were also observed in the etch rate versus √(E{sub i}) curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing E{sub i} were found to correspond to changes in the predominant ion flux from feed gas ions Cl{sub x}{sup +} to ionized etch products SiCl{sub x}{sup +} caused by the increased etch rates at increased E{sub i}, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors.

  5. Plasma etching a ceramic composite. [evaluating microstructure

    NASA Technical Reports Server (NTRS)

    Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

    1992-01-01

    Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

  6. Pulsed plasma etching for semiconductor manufacturing

    NASA Astrophysics Data System (ADS)

    Economou, Demetre J.

    2014-07-01

    Power-modulated (pulsed) plasmas have demonstrated several advantages compared to continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching rate, better uniformity, and less structural, electrical or radiation (e.g. vacuum ultraviolet) damage. Pulsed plasmas can also ameliorate unwanted artefacts in etched micro-features such as notching, bowing, micro-trenching and aspect ratio dependent etching. As such, pulsed plasmas may be indispensable in etching of the next generation of micro-devices with a characteristic feature size in the sub-10 nm regime. This work provides an overview of principles and applications of pulsed plasmas in both electropositive (e.g. argon) and electronegative (e.g. chlorine) gases. The effect of pulsing the plasma source power (source pulsing), the electrode bias power (bias pulsing), or both source and bias power (synchronous pulsing), on the time evolution of species densities, electron energy distribution function and ion energy and angular distributions on the substrate is discussed. The resulting pulsed plasma process output (etching rate, uniformity, damage, etc) is compared, whenever possible, to that of CW plasma, under otherwise the same or similar conditions.

  7. Copper-assisted, anti-reflection etching of silicon surfaces

    DOEpatents

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  8. Study on the etching process GaAs-based VCSEL

    NASA Astrophysics Data System (ADS)

    Feng, Yuan; Liu, Guojun; Hao, Yongqin; Yan, Changling; Zhang, Jiabin; Li, Yang; Li, Zaijin

    2016-11-01

    Wet etching process is a key technology in fabrication of VCSEL and their array in order to improve opto-electric characteristics of high-power VCSEL, devices with multi-ring distribution hole VCSEL is fabricated. The H3PO4 etching solution was used in the wet etching progress and etching rate is studied by changing etching solution concentration and etching time. The optimum technological conditions were determined by studying the etching morphology and etching depth of the GaAs-VCSEL. The tested results show that the complete morphology and the appropriate depth can be obtained by using the concentration ratio of 1:1:10, which can meet the requirements of GaAs-based VCSEL micro- structure etching process.

  9. Geometric characteristics of silicon cavities etched in EDP

    NASA Astrophysics Data System (ADS)

    Ju, Hui; Ohta, Takayuki; Ito, Masafumi; Sasaki, Minoru; Hane, Kazuhiro; Hori, Masaru

    2007-05-01

    Etching characteristics of hexagonal and triangular cavities on a lang1 1 1rang-oriented silicon wafer in the etchant of ethylene diamine, pyrocatechol and water (EDP/EPW) were investigated. The patterns are aligned to keep the sides perpendicular to lang1 1 0rang crystal orientations, in order that the sidewalls of cavities are parallel to {1 1 0} crystalline planes. RIE-ICP etching is used to define the depth of the triangular and hexagonal cavities, and EDP etching is followed for different etching times. The final self-etch-stop profiles of cavities are determined by the dimension of mask patterns and the depth of cavities in the wafer. The etching process of the hexagon and triangle cavities is modeled, based on the crystal structure and wet etching principle. The results of etched cavities confirm the condition to determine the final etching profiles.

  10. Total analysis systems with Thermochromic Etching Discs technology.

    PubMed

    Avella-Oliver, Miquel; Morais, Sergi; Carrascosa, Javier; Puchades, Rosa; Maquieira, Ángel

    2014-12-16

    A new analytical system based on Thermochromic Etching Discs (TED) technology is presented. TED comprises a number of attractive features such as track independency, selective irradiation, a high power laser, and the capability to create useful assay platforms. The analytical versatility of this tool opens up a wide range of possibilities to design new compact disc-based total analysis systems applicable in chemistry and life sciences. In this paper, TED analytical implementation is described and discussed, and their analytical potential is supported by several applications. Microarray immunoassay, immunofiltration assay, solution measurement, and cell culture approaches are herein addressed in order to demonstrate the practical capacity of this system. The analytical usefulness of TED technology is herein demonstrated, describing how to exploit this tool for developing truly integrated analytical systems that provide solutions within the point of care framework.

  11. Effects of etching time on alpha tracks in Solid state Nuclear Track Detectors

    NASA Astrophysics Data System (ADS)

    Gillmore, Gavin; Wertheim, David; Crust, Simon

    2013-04-01

    Inhalation of radon gas is thought to be the cause of about 1100 lung cancer related deaths each year in the UK (1). Radon concentrations can be monitored using Solid State Nuclear Track Detectors (SSNTDs) as the natural decay of radon results in alpha particles which form tracks in the detectors and these tracks can be etched in order to enable microscopic analysis. We have previously shown that confocal microscopy can be used for 3D visualisation of etched SSNTDs (2, 3). The aim of the study was to examine the effect of etching time on the appearance of alpha tracks in SSNTDs. Six SSNTDs were placed in a chamber with a luminous dial watch for a fixed period. The detectors were etched for between 30 minutes and 4.5 hours using 6M NaOH at a temperature of 90oC. A 'LEXT' OLS4000 confocal laser scanning microscope (Olympus Corporation, Japan) was used to acquire 2D and 3D image datasets of CR-39 plastic SSNTDs. Confocal microscope 3D images were acquired using a x50 or x100 objective lens. Data were saved as images and also spreadsheet files with height measurements. Software was written using MATLAB (The MathWorks Inc., USA) to analyse the height data. Comparing the 30 minute and 4 hour etching time detectors, we observed that there were marked differences in track area; the lower the etching time the smaller the track area. The degree to which etching may prevent visualising adjacent tracks also requires further study as it is possible that etching could result in some tracks being subsumed in other tracks. On the other hand if there is too little etching, track sizes would be reduced and hence could be more difficult to image; thus there is a balance required to obtain suitable measurement accuracy. (1) Gray A, Read S, McGale P and Darby S. Lung cancer deaths from indoor radon and the cost effectiveness and potential of policies to reduce them. BMJ 2009; 338: a3110. (2) Wertheim D, Gillmore G, Brown L, and Petford N. A new method of imaging particle tracks in

  12. Studying post-etching silicon crystal defects on 300mm wafer by automatic defect review AFM

    NASA Astrophysics Data System (ADS)

    Zandiatashbar, Ardavan; Taylor, Patrick A.; Kim, Byong; Yoo, Young-kook; Lee, Keibock; Jo, Ahjin; Lee, Ju Suk; Cho, Sang-Joon; Park, Sang-il

    2016-03-01

    Single crystal silicon wafers are the fundamental elements of semiconductor manufacturing industry. The wafers produced by Czochralski (CZ) process are very high quality single crystalline materials with known defects that are formed during the crystal growth or modified by further processing. While defects can be unfavorable for yield for some manufactured electrical devices, a group of defects like oxide precipitates can have both positive and negative impacts on the final device. The spatial distribution of these defects may be found by scattering techniques. However, due to limitations of scattering (i.e. light wavelength), many crystal defects are either poorly classified or not detected. Therefore a high throughput and accurate characterization of their shape and dimension is essential for reviewing the defects and proper classification. While scanning electron microscopy (SEM) can provide high resolution twodimensional images, atomic force microscopy (AFM) is essential for obtaining three-dimensional information of the defects of interest (DOI) as it is known to provide the highest vertical resolution among all techniques [1]. However AFM's low throughput, limited tip life, and laborious efforts for locating the DOI have been the limitations of this technique for defect review for 300 mm wafers. To address these limitations of AFM, automatic defect review AFM has been introduced recently [2], and is utilized in this work for studying DOI on 300 mm silicon wafer. In this work, we carefully etched a 300 mm silicon wafer with a gaseous acid in a reducing atmosphere at a temperature and for a sufficient duration to decorate and grow the crystal defects to a size capable of being detected as light scattering defects [3]. The etched defects form a shallow structure and their distribution and relative size are inspected by laser light scattering (LLS). However, several groups of defects couldn't be properly sized by the LLS due to the very shallow depth and low

  13. ICP Etching of SiC

    SciTech Connect

    Grow, J.M.; Lambers, E.S.; Ostling, M.; Pearton, S.J.; Ren, F.; Shul, R.J.; Wang, J.J.; Zetterling, C.-M.

    1999-02-04

    A number of different plasma chemistries, including NF{sub 3}/O{sub 2}, SF{sub 6}/O{sub 2}, SF{sub 6}/Ar, ICl, IBr, Cl{sub 2}/Ar, BCl{sub 3}/Ar and CH{sub 4}/H{sub 2}/Ar, have been investigated for dry etching of 6H and 3C-SiC in a Inductively Coupled Plasma tool. Rates above 2,000 {angstrom} cm{sup {minus}1} are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl{sub 2}-based etching does not provide high rates, even though the potential etch products (SiCi{sub 4} and CCl{sub 4}) are volatile. Photoresist masks have poor selectivity over SiC in F{sub 2}-based plasmas under normal conditions, and ITO or Ni are preferred.

  14. Etching of nanopatterns in silicon using nanopantography

    NASA Astrophysics Data System (ADS)

    Xu, Lin; Nasrullah, Azeem; Chen, Zhiying; Jain, Manish; Ruchhoeft, Paul; Economou, Demetre J.; Donnelly, Vincent M.

    2008-01-01

    Nanopantography is a technique for parallel writing of nanopatterns over large areas. A broad ion beam impinges on a substrate containing many microfabricated electrostatic lenses that focus ions to spots at the substrate surface. Here, etching of nanopatterns is demonstrated. The substrate was continuously titled about x and y axes with 0.11° precision, corresponding to a translation of the ion foci of 1.5nm on the substrate. With tilting in one direction, 15nm full width at half maximum trenches 45nm deep were etched into a Si wafer using an Ar+ beam in a Cl2 ambient. T-shaped patterns were etched by tilting the substrates in two directions.

  15. Modified-Atmospheric Pressure-Matrix Assisted Laser Desorption/Ionization Identification of Friction Modifier Additives Oleamide and Ethoxylated Tallow Amines on Varied Metal Target Materials and Tribologically Stressed Steel Surfaces.

    PubMed

    Widder, Lukas; Ristic, Andjelka; Brenner, Florian; Brenner, Josef; Hutter, Herbert

    2015-11-17

    For many tasks in failure and damage analysis of surfaces deteriorated in heavy tribological contact, the detailed characterization of used lubricants and their additives is essential. The objective of the presented work is to establish accessibility of tribostressed surfaces for direct characterization via modified atmospheric pressure-matrix assisted laser desorption/ionization-mass spectrometry (m-AP-MALDI-MS). Special target holders were constructed to allow target samples of differing shape and form to fit into the desorption/ionization chamber. The best results of desorption and ionization on different target materials and varying roughnesses were achieved on smooth surfaces with low matrix/substrate interaction. M-AP-MALDI characterization of tribologically stressed steel surfaces after pin-on-disc sliding wear tests (SRV-tribotests) yielded positive identification of used friction modifier additives. Further structure elucidation by electrospray ionization mass spectrometry (ESI-MS) and measurements of worn surfaces by time-of-flight-secondary ion mass spectrometry (TOF-SIMS) accompanied findings about additive behavior and deterioration during tribological contact. Using m-AP-MALDI for direct offline examinations of worn surfaces may set up a quick method for determination of additives used for lubrication and general characterization of a tribological system.

  16. Optical Diagnostics of the Plasma and Surface during Inductively Coupled Plasma Etching

    NASA Astrophysics Data System (ADS)

    Herman, Irving P.

    1999-10-01

    The use of optical diagnostics to analyze the etching of Si, Ge, and InP by chlorine in an inductively coupled plasma (ICP) is investigated. Optical probes, along with other conventional plasma diagnostics, are used to characterize the process through measurements of the constituents of the plasma and the surface composition to obtain a more complete picture of the etching process. Neutral Cl2 and Cl densities are determined by optical emission actinometry by following optical emission from Cl_2. The absolute densities of Cl_2^+ and Cl^+ are determined by laser- induced fluorescence (LIF) of Cl_2^+ and Langmuir probe measurements of the total positive ion density. The surface is probed by using laser-induced thermal desorption with an XeCl laser (308 nm) to desorb the steady-state adlayer and optical methods to detect these desorbed species. The development of a new method to detect optically these laser desorbed (LD) species is detailed, that of examining transient changes in the plasma-induced emission (PIE). This LD-PIE method is more universal than the previously reported detection by LIF (LD-LIF), but requires more calibration due to varying electron density and temperature with varying plasma conditions. This is detailed for Si etching, for which LD-PIE and LD-LIF results are compared. The calibration methods are seen to be valid when the surface is analyzed as the rf power supplied to the reactor is varied. The electron density - needed for LD-PIE calibration - is measured by microwave interferometry. An improved understanding of the etching mechanism is obtained by combining the results of each of these measurements. This work was supported by NSF Grant No. DMR-98-15846. note

  17. Radicals Are Required for Thiol Etching of Gold Particles.

    PubMed

    Dreier, Timothy A; Ackerson, Christopher J

    2015-08-03

    Etching of gold with an excess of thiol ligand is used in both synthesis and analysis of gold particles. Mechanistically, the process of etching gold with excess thiol is unclear. Previous studies have obliquely considered the role of oxygen in thiolate etching of gold. Herein, we show that oxygen or a radical initiator is a necessary component for efficient etching of gold by thiolates. Attenuation of the etching process by radical scavengers in the presence of oxygen, and the restoration of activity by radical initiators under inert atmosphere, strongly implicate the oxygen radical. These data led us to propose an atomistic mechanism in which the oxygen radical initiates the etching process.

  18. SERS detection of protein biochip fabricated by etching polystyrene template

    NASA Astrophysics Data System (ADS)

    Li, Zhishi; Ruan, Weidong; Song, Wei; Xue, Xiangxin; Mao, Zhu; Ji, Wei; Zhao, Bing

    2011-11-01

    In this study, a nanoscale protein chip is prepared by using an etched polystyrene (PS) template. This protein chip can be directly used for immunoassay, with the help of Surface Enhanced Raman Scattering (SERS) spectra. Some glass slides submerged in aldehyde is initially prepared, modified with antibodies, human immunoglobulin G (IgG). Then PS arrays are self-assembled on these slides with the Langmuir-Blodgett method. The PS template pattern is transferred to the human IgG substrate using an etching process—slides are exposed to O 2 plasma for 90 s. The PS nanoparticles are then washed away using phosphate buffered saline solution. Next, the slides are dipped into bovine serum albumin solution to ensure that the anti IgG would bond only to the human IgG. At this moment, a patterned protein chip is obtained. When used for protein detection, the protein chip could be immersed into labeled specificity antigen solution. Here we chose fluorescein isothiocyanate anti-human IgG. After washing, only bonded antigens remain. Fluorescence microscopy and SERS is used to characterize the samples. The SERS spectra intensity shows liner correlation with the concentration of anti-human IgG. All the experiments are conducted in a phosphate buffered saline solution at 37 °C for 2 h.

  19. Modified Truncated Cone Target Hyperthermal Atomic Oxygen Test Results

    NASA Technical Reports Server (NTRS)

    Vaughn, J. A.; Kamenetsky, R. R.; Finckenor, M. M.

    1999-01-01

    The modified truncated cone target is a docking target planned for use on the International Space Station. The current design consists of aluminum treated with a black dye anodize, then crosshairs are laser etched for a silvery color. Samples of the treated aluminum were exposed to laboratory simulation of atomic oxygen and ultraviolet radiation to determine if significant degradation might occur. Durability was evaluated based on the contrast ratio between the black and silvery white areas of the target. Degradation of optical properties appeared to level off after an initial period of exposure to atomic oxygen. The sample that was not alodined according to MIL-C-5541, type 1A, performed better than alodined samples.

  20. Optical integration of laterally modified multiple quantum well structures by implantation enhanced intermixing to realize gain coupled DFB lasers

    NASA Astrophysics Data System (ADS)

    Hofsäß, V.; Kuhn, J.; Kaden, C.; Härle, V.; Bolay, H.; Scholz, F.; Schweizer, H.; Hillmer, H.; Lösch, R.; Schlapp, W.

    1995-12-01

    We report on the realization of gain coupled distributed feedback (GC-DFB) lasers using masked implantation enhanced intermixing (MIEI) in a full planar technology. The process requires only planar epitaxy steps to minimize ion straggling. We present a detailed investigation on the integration processing steps as implantation, subsequent annealing and regrowth with InP (MOCVD). We also discuss critical technology steps. Surface morphology depends very sensitive on implantation and annealing. Nonradiative recombination caused by defects leads to high losses in optical devices. We achieve good results for an AsH 3 stabilized annealing step in a MOCVD equipment, compared to rapid thermal annealing (RTA), which proceeds as the second epitaxial step. Photoluminescence (PL) studies show the excellent interface quality. High homogeneity and small linewidth after the integration process indicate sufficient quality to realize electrical gain coupled DFB-laser devices by IEI.

  1. Laser micro-machinability of borosilicate glass surface-modified by electric field-assisted ion-exchange method

    NASA Astrophysics Data System (ADS)

    Matsusaka, S.; Kobayakawa, T.; Hidai, H.; Morita, N.

    2012-08-01

    In order to improve the laser micro-machinability of borosilicate glass, the glass surface was doped with metal (silver or copper) ions by an electric field-assisted ion-exchange method. Doped ions drifted and diffused into the glass substrate under a DC electric field. The concentration of metal ions within the doped area was approximately constant because the ion penetration was caused by substitution between dopant metal and inherent sodium ions. Nanosecond ultraviolet laser irradiation of metal-containing regions produced flat, smooth and defect-free holes. However, the shapes of holes were degraded when the processed hole bottoms reached ion penetration depths. A numerical analysis of ionic drift-diffusion behaviour in glass material under an electric field was also carried out. The calculated results for penetration depth and ionic flux showed good agreement with the measured values.

  2. Topical ocular delivery to laser-induced choroidal neovascularization by dual internalizing RGD and TAT peptide-modified nanoparticles

    PubMed Central

    Chu, Yongchao; Chen, Ning; Yu, Huajun; Mu, Hongjie; He, Bin; Hua, Hongchen; Wang, Aiping; Sun, Kaoxiang

    2017-01-01

    A nanoparticle (NP) was developed to target choroidal neovascularization (CNV) via topical ocular administration. The NPs were prepared through conjugation of internalizing arginine-glycine-aspartic acid RGD (iRGD; Ac-CCRGDKGPDC) and transactivated transcription (TAT) (RKKRRQRRRC) peptide to polymerized ethylene glycol and lactic-co-glycolic acid. The iRGD sequence can specifically bind with integrin αvβ3, while TAT facilitates penetration through the ocular barrier. 1H nuclear magnetic resonance and high-performance liquid chromatography demonstrated that up to 80% of iRGD and TAT were conjugated to poly(ethylene glycol)– poly(lactic-co-glycolic acid). The resulting particle size was 67.0±1.7 nm, and the zeta potential of the particles was −6.63±0.43 mV. The corneal permeation of iRGD and TAT NPs increased by 5.50- and 4.56-fold compared to that of bare and iRGD-modified NPs, respectively. Cellular uptake showed that the red fluorescence intensity of iRGD and TAT NPs was highest among primary NPs and iRGD- or TAT-modified NPs. CNV was fully formed 14 days after photocoagulation in Brown Norway (BN) rats as shown by optical coherence tomography and fundus fluorescein angiography analyses. Choroidal flat mounts in BN rats showed that the red fluorescence intensity of NPs followed the order of iRGD and TAT NPs > TAT-modified NPs > iRGD-modified NPs > primary NPs. iRGD and TAT dual-modified NPs thus displayed significant targeting and penetration ability both in vitro and in vivo, indicating that it is a promising drug delivery system for managing CNV via topical ocular administration. PMID:28260884

  3. Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching

    SciTech Connect

    Cybart, Shane; Roediger, Peter; Ulin-Avila, Erick; Wu, Stephen; Wong, Travis; Dynes, Robert

    2012-11-30

    We demonstrate a low pressure reactive ion etching process capable of patterning nanometer scale angled sidewalls and three dimensional structures in photoresist. At low pressure the plasma has a large dark space region where the etchant ions have very large highly-directional mean free paths. Mounting the sample entirely within this dark space allows for etching at angles relative to the cathode with minimal undercutting, resulting in high-aspect ratio nanometer scale angled features. By reversing the initial angle and performing a second etch we create three-dimensional mask profiles.

  4. Laser nanoablation of diamond surface at high pulse repetition rates

    NASA Astrophysics Data System (ADS)

    Kononenko, V. V.; Gololobov, V. M.; Pashinin, V. P.; Konov, V. I.

    2016-10-01

    The chemical etching of the surface of a natural diamond single crystal irradiated by subpicosecond laser pulses with a high repetition rate (f ≤slant 500 {\\text{kHz}}) in air is experimentally investigated. The irradiation has been performed by the second-harmonic (515 {\\text{nm}}) radiation of a disk Yb : YAG laser. Dependences of the diamond surface etch rate on the laser energy density and pulse repetition rate are obtained.

  5. Mechanism for low-etching resistance and surface roughness of ArF photoresist during plasma irradiation

    SciTech Connect

    Jinnai, Butsurin; Koyama, Koji; Kato, Keisuke; Yasuda, Atsushi; Momose, Hikaru; Samukawa, Seiji

    2009-03-01

    ArF excimer laser lithography was introduced to fabricate nanometer-scale devices and uses chemically amplified photoresist polymers including photoacid generators (PAGs). Because plasma-etching processes cause serious problems related to the use of ArF photoresists, such as line-edge roughness and low etching selectivity, we have to understand the interaction between plasma and ArF photoresist polymers. Investigating the effects of surface temperature and the irradiation species from plasma, we have found that ion irradiation by itself did not drastically increase the roughness or etching rate of ArF photoresist films unless it was combined with ultraviolet/vacuum ultraviolet (UV/VUV) photon irradiation. The structures of ArF photoresist polymers were largely unchanged by ion irradiation alone but were destroyed by combinations of ion and UV/VUV-photon irradiation. Our results suggested that PAG-mediated deprotection induced by UV/VUV-photon irradiation was amplified at surface temperatures above 100 deg. C. The etching rate and surface roughness of plasma-etched ArF photoresists are affected by the irradiation species and surface temperature during plasma etching. UV/VUV-photon irradiation plays a particularly important role in the interaction between plasma and ArF photoresist polymers.

  6. Solid-State Halogen Atom Source for Chemical Dynamics and Etching

    SciTech Connect

    Hess, Wayne P.; Joly, Alan G.; Beck, Kenneth M.; Gerrity, Daniel P.; Sushko, Petr V.; Shluger, Alexander L.

    2002-08-05

    We describe a solid state Br atom source for surface etching, kinetics, or reaction dynamics studies. Pulsed laser irradiation of crystalline KBr, near the bulk absorption threshold at 6eV, produces hyperthermal Br atmos in dense plumes. The Br atom density and velocities may be controlled by choice of laser pulse power and photon energy. Single and multiple pulse excitation of KBr produces Br and Br* in controllable quantities and velocities, thus providing an attractive UHV compatible solid-state radical atom source. The solid-state atom source is in principle extensible to other halogens using other alkali halides and perhaps other materials.

  7. Study on sapphire microstructure processing technology based on wet etching

    NASA Astrophysics Data System (ADS)

    Shang, Ying-Qi; Qi, Hong; Ma, Yun-Long; Wu, Ya-Lin; Zhang, Yan; Chen, Jing

    2017-03-01

    Aiming at the problem that sapphire surface roughness is quite large after wet etching in sapphire microstructure processing technology, we optimize the wet etching process parameters, study on the influences of concentration and temperature of etching solution and etching time on the sapphire surface roughness and etching rate, choose different process parameters for the experiment and test and analyze the sapphire results after wet etching. Aiming at test results, we also optimize the process parameters and do experiment. Experimental results show that, after optimizing the parameters of etching solution, surface roughness of etched sapphire is 0.39 nm, effectively with reduced surface roughness, improved light extraction efficiency and meeting the production requirements of high-precision optical pressure sensor.

  8. Etch Profile Simulation Using Level Set Methods

    NASA Technical Reports Server (NTRS)

    Hwang, Helen H.; Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

    1997-01-01

    Etching and deposition of materials are critical steps in semiconductor processing for device manufacturing. Both etching and deposition may have isotropic and anisotropic components, due to directional sputtering and redeposition of materials, for example. Previous attempts at modeling profile evolution have used so-called "string theory" to simulate the moving solid-gas interface between the semiconductor and the plasma. One complication of this method is that extensive de-looping schemes are required at the profile corners. We will present a 2D profile evolution simulation using level set theory to model the surface. (1) By embedding the location of the interface in a field variable, the need for de-looping schemes is eliminated and profile corners are more accurately modeled. This level set profile evolution model will calculate both isotropic and anisotropic etch and deposition rates of a substrate in low pressure (10s mTorr) plasmas, considering the incident ion energy angular distribution functions and neutral fluxes. We will present etching profiles of Si substrates in Ar/Cl2 discharges for various incident ion energies and trench geometries.

  9. Technique for etching monolayer and multilayer materials

    DOEpatents

    Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

    2015-10-06

    A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

  10. Comparison of modified widman and coronally advanced flap surgery combined with Co2 laser root irradiation in periodontal therapy: a 15-year follow-up.

    PubMed

    Crespi, Roberto; Cappare, Paolo; Gherlone, Enrico; Romanos, George E

    2011-01-01

    The aim of this study was to compare modified Widman flap surgery (MW) to coronally advanced flap surgery combined with carbon dioxide laser root conditioning (CAF + CO2) from baseline to 15 years of follow-up. Each of 25 patients participating in this study were treated using a split-mouth design: In one quadrant, the teeth received MW surgery (control), and on the other side, after a full-thickness flap was raised, a CO2 laser was used and the full-thickness flap was repositioned coronally and sutured (CAF + CO2, test). Plaque Index, Gingival Index, probing depth, and clinical attachment level were monitored from baseline to 15 years. For probing depths ⋝ 7 mm, CAF + CO2 sites provided greater pocket reduction (P < .01), and data on clinical attachment level showed a significant difference between control and test sites at 5 to 6 mm (P < .001) and ⋝ 7 mm (P < .001). This study showed that CAF + CO2 therapy resulted in significantly higher improvements than MW surgery.

  11. Wet KOH etching of freestanding AlN single crystals

    NASA Astrophysics Data System (ADS)

    Bickermann, M.; Schmidt, S.; Epelbaum, B. M.; Heimann, P.; Nagata, S.; Winnacker, A.

    2007-03-01

    We investigated defect-selective wet chemical etching of freestanding aluminum nitride (AlN) single crystals and polished cuts in a molten NaOH-KOH eutectic at temperatures ranging from 240 to 400 °C. Due to the strong anisotropy of the AlN wurtzite structure, different AlN faces get etched at very different etching rates. On as-grown rhombohedral and prismatic facets, defect-related etching features could not be traced, as etching these facets was found to mainly emphasize features present already on the un-etched surface. On nitrogen polar basal planes, hexagonal pyramids/hillocks exceeding 100 μm in diameter may form within seconds of etching at 240 °C. They sometimes are arranged in lines and clusters, thus we attribute them to defects on the surface, presumably originating in the bulk material. On aluminum polar basal planes, the etch pit density which saturates after approx. 2-3 min of total etching time at 350 °C equals the density of a certain type of dislocations (presumably screw dislocations) threading the surface. Smaller etch pits form around annealed indentations, in the vicinity of some bigger etch pits after repeated etching, and sometimes also isolated on the surface area. Although alternate explanations exist, we attribute these etch pits to threading mixed and edge dislocations. This paper features etching parameters optimized for different planes and models on the formation of etching features especially on the polar faces. Finally, the issue of reliability and reproducibility of defect detection and evaluation by wet chemical etching is addressed.

  12. High index contrast polysiloxane waveguides fabricated by dry etching

    SciTech Connect

    Madden, S. J.; Zhang, M. Y.; Choi, D.-Y.; Luther-Davies, B.; Charters, R.

    2009-05-15

    The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPG trade mark sign polysiloxane thin films. The use of a silica mask and CHF{sub 3}/O{sub 2} etch gas led to large etch selectivity between the silica and IPG trade mark sign of >20 and etch rates of >100 nm/min. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films.

  13. Comparison of Self-Etch Primers with Conventional Acid Etching System on Orthodontic Brackets

    PubMed Central

    Zope, Amit; Zope-Khalekar, Yogita; Chitko, Shrikant S.; Kerudi, Veerendra V.; Patil, Harshal Ashok; Jaltare, Pratik; Dolas, Siddhesh G

    2016-01-01

    Introduction The self-etching primer system consists of etchant and primer dispersed in a single unit. The etching and priming are merged as a single step leading to fewer stages in bonding procedure and reduction in the number of steps that also reduces the chance of introduction of error, resulting in saving time for the clinician. It also results in smaller extent of enamel decalcification. Aim To compare the Shear Bond Strength (SBS) of orthodontic bracket bonded with Self-Etch Primers (SEP) and conventional acid etching system and to study the surface appearance of teeth after debonding; etching with conventional acid etch and self-etch priming, using stereomicroscope. Materials and Methods Five Groups (n=20) were created randomly from a total of 100 extracted premolars. In a control Group A, etching of enamel was done with 37% phosphoric acid and bonding of stainless steel brackets with Transbond XT (3M Unitek, Monrovia, California). Enamel conditioning in left over four Groups was done with self-etching primers and adhesives as follows: Group B-Transbond Plus (3M Unitek), Group C Xeno V+ (Dentsply), Group D-G-Bond (GC), Group E-One-Coat (Coltene). The Adhesive Remnant Index (ARI) score was also evaluated. Additionally, the surface roughness using profilometer were observed. Results Mean SBS of Group A was 18.26±7.5MPa, Group B was 10.93±4.02MPa, Group C was 6.88±2.91MPa while of Group D was 7.78±4.13MPa and Group E was 10.39±5.22MPa respectively. In conventional group ARI scores shows that over half of the adhesive was remaining on the surface of tooth (score 1 to 3). In self-etching primer groups ARI scores show that there was no or minor amount of adhesive remaining on the surface of tooth (score 4 and 5). SEP produces a lesser surface roughness on the enamel than conventional etching. However, statistical analysis shows significant correlation (p<0.001) of bond strength with surface roughness of enamel. Conclusion All groups might show clinically

  14. Biomimetic hydrophobic surface fabricated by chemical etching method from hierarchically structured magnesium alloy substrate

    NASA Astrophysics Data System (ADS)

    Liu, Yan; Yin, Xiaoming; Zhang, Jijia; Wang, Yaming; Han, Zhiwu; Ren, Luquan

    2013-09-01

    As one of the lightest metal materials, magnesium alloy plays an important role in industry such as automobile, airplane and electronic product. However, magnesium alloy is hindered due to its high chemical activity and easily corroded. Here, inspired by typical plant surfaces such as lotus leaves and petals of red rose with super-hydrophobic character, the new hydrophobic surface is fabricated on magnesium alloy to improve anti-corrosion by two-step methodology. The procedure is that the samples are processed by laser first and then immersed and etched in the aqueous AgNO3 solution concentrations of 0.1 mol/L, 0.3 mol/L and 0.5 mol/L for different times of 15 s, 40 s and 60 s, respectively, finally modified by DTS (CH3(CH2)11Si(OCH3)3). The microstructure, chemical composition, wettability and anti-corrosion are characterized by means of SEM, XPS, water contact angle measurement and electrochemical method. The hydrophobic surfaces with microscale crater-like and nanoscale flower-like binary structure are obtained. The low-energy material is contained in surface after DTS treatment. The contact angles could reach up to 138.4 ± 2°, which hydrophobic property is both related to the micro-nano binary structure and chemical composition. The results of electrochemical measurements show that anti-corrosion property of magnesium alloy is improved. Furthermore, our research is expected to create some ideas from natural enlightenment to improve anti-corrosion property of magnesium alloy while this method can be easily extended to other metal materials.

  15. Use of lower-end technology etch platforms for high-etch loads

    NASA Astrophysics Data System (ADS)

    Nemelka, Jefferson O.

    2003-12-01

    In order to meet the needs of multiple customers with varying design specifications, merchant photomask suppliers need to provide photomasks for a wide range of design patterns. Some masks require etching less than 1% of the total mask film, while others require etching over 80% of the mask. Etching masks with these extremes in pattern loads can often require upgrading existing tool sets, particularly as the mask specifications become tighter. One alternative to upgrading tools is to develop new load-specific processes on existing lower-end tools, which requires a substantial amount of development work. Dry etching MoSi Embedded Attenuating Phase Shift Material using sulfur hexafluoride and helium under all etch loads presents challenges in the Unaxis Generation II mask etch platform. Etch processes developed for low load masks cannot always be used for high load masks due to problems in maintaining a stable process with good performance. In order to improve the etch performance for high MoSi loads (> 70% clear), a Gen II specific hardware design which can adversely affect uniformity at high loads was identified and eliminated as a dominant source of non-uniformity. A DOE studying total gas flow, He/SF6 ratio, pressure, ICP, and RIE power was then used to identify a stable process window for high MoSi loads. Another DOE studying the effects of pressure, ICP power, and RIE power on process uniformity was then carried out within the stable process window. Process conditions were identified which produced highly loaded 248nm and 193nm EAPSM masks with phase uniformity below 3°. Sidewall profiles were vertical for 193nm MoSi films but were slightly tapered for 248nm MoSi films, both with less than 5nm of CD bias.

  16. Infrared ion spectroscopy in a modified quadrupole ion trap mass spectrometer at the FELIX free electron laser laboratory

    NASA Astrophysics Data System (ADS)

    Martens, Jonathan; Berden, Giel; Gebhardt, Christoph R.; Oomens, Jos

    2016-10-01

    We report on modifications made to a Paul-type quadrupole ion trap mass spectrometer and discuss its application in infrared ion spectroscopy experiments. Main modifications involve optical access to the trapped ions and hardware and software coupling to a variety of infrared laser sources at the FELIX infrared free electron laser laboratory. In comparison to previously described infrared ion spectroscopy experiments at the FELIX laboratory, we find significant improvements in efficiency and sensitivity. Effects of the trapping conditions of the ions on the IR multiple photon dissociation spectra are explored. Enhanced photo-dissociation is found at lower pressures in the ion trap. Spectra obtained under reduced pressure conditions are found to more closely mimic those obtained in the high-vacuum conditions of an Fourier transform ion cyclotron resonance mass spectrometer. A gas-mixing system is described enabling the controlled addition of a secondary gas into helium buffer gas flowing into the trap and allows for ion/molecule reactions in the trap. The electron transfer dissociation (ETD) option of the mass spectrometer allows for IR structure characterization of ETD-generated peptide dissociation products.

  17. Controlling the relative rates of adlayer formation and removal during etching in inductively coupled plasmas

    NASA Astrophysics Data System (ADS)

    Fuller, Nicholas Colvin Masi

    Laser desorption (LD) of the adlayer coupled with laser induced fluorescence (LIF) and plasma induced emission (PIE) of desorbed adsorbates is used to investigate the relative rates of chlorination and sputtering during the etching of Si in inductively coupled Cl2-Ar plasmas. Such an analysis is a two-fold process: surface analysis and plasma characterization. Surface analysis of Si etching using LD-LIF and LD-PIE techniques combined with etch rate measurements have revealed that the coverage of SiCl2 and etch rate increases and coverage of Si decreases abruptly for a chlorine fraction of 75% and ion energy of 80 eV. The precise Cl2 fraction for which these abrupt changes occur increases with an increase in ion energy. These changes may be caused by local chemisorption-induced reconstruction of Si <100>. Furthermore, the chlorination and sputtering rates are increased by ˜ an order of magnitude as the plasma is changed from Ar-dominant to Cl-dominant. Characterization of the plasma included determination of the dominant ion in Cl2 plasmas using LIF and a Langmuir probe and measurement of the absolute densities of Cl2, Cl, Cl+, and At + in Cl2-Ar discharges using optical emission actinometry. These studies reveal that Cl+ is the dominant positive ion in the H-mode and the dissociation of Cl2 to Cl increases with an increase in Ar fraction due to an increase in electron temperature. Furthermore, for powers exceeding 600 W, the neutral to ion flux ratio is strongly dependent on Cl2 fraction and is attributed mostly to the decrease in Cl density. Such dependence of the flux ratio on Cl2 fraction is significant in controlling chlorination and sputtering rates not only for Si etching, but for etching other key technological materials. ICP O2 discharges were also studied for low-kappa polymeric etch applications. These studies reveal that the electron temperature is weakly dependent on rf power and O2 dissociation is low (˜2%) at the maximum rf power density of 5.7 Wcm

  18. CR-39 track etching and blow-up method

    DOEpatents

    Hankins, Dale E.

    1987-01-01

    This invention is a method of etching tracks in CR-39 foil to obtain uniformly sized tracks. The invention comprises a step of electrochemically etching the foil at a low frequency and a "blow-up" step of electrochemically etching the foil at a high frequency.

  19. New phase formation in titanium aluminide during chemical etching

    SciTech Connect

    Takasaki, Akito; Ojima, Kozo; Taneda, Youji . Dept. of Mathematics and Physics)

    1994-05-01

    A chemical etching technique is widely used for metallographic observation. Because this technique is based on a local corrosion phenomenon on a sample, the etching mechanism, particularly for two-phase alloys, can be understood by electrochemical consideration. This paper describes formation of a new phase in a Ti-45Al (at.%) titanium aluminide during chemical etching, and the experimental results are discussed electrochemically.

  20. Dopant Selective Reactive Ion Etching of Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Okojie, Robert (Inventor)

    2016-01-01

    A method for selectively etching a substrate is provided. In one embodiment, an epilayer is grown on top of the substrate. A resistive element may be defined and etched into the epilayer. On the other side of the substrate, the substrate is selectively etched up to the resistive element, leaving a suspended resistive element.

  1. Antifungal activity of Ag:hydroxyapatite thin films synthesized by pulsed laser deposition on Ti and Ti modified by TiO2 nanotubes substrates

    NASA Astrophysics Data System (ADS)

    Eraković, S.; Janković, A.; Ristoscu, C.; Duta, L.; Serban, N.; Visan, A.; Mihailescu, I. N.; Stan, G. E.; Socol, M.; Iordache, O.; Dumitrescu, I.; Luculescu, C. R.; Janaćković, Dj.; Miškovic-Stanković, V.

    2014-02-01

    Hydroxyapatite (HA) is a widely used biomaterial for implant thin films, largely recognized for its excellent capability to chemically bond to hard tissue inducing the osteogenesis without immune response from human tissues. Nowadays, intense research efforts are focused on development of antimicrobial HA doped thin films. In particular, HA doped with Ag (Ag:HA) is expected to inhibit the attachment of microbes and contamination of metallic implant surface. We herewith report on nano-sized HA and Ag:HA thin films synthesized by pulsed laser deposition on pure Ti and Ti modified with 100 nm diameter TiO2 nanotubes (fabricated by anodization of Ti plates) substrates. The HA-based thin films were characterized by SEM, AFM, EDS, FTIR, and XRD. The cytotoxic activity was tested with HEp2 cells against controls. The antifungal efficiency of the deposited layers was tested against the Candida albicans and Aspergillus niger strains. The Ti substrates modified with TiO2 nanotubes covered with Ag:HA thin films showed the highest antifungal activity.

  2. Characterization of graphite etched with potassium hydroxide and its application in fast-rechargeable lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Shim, Jae-Hyun; Lee, Sanghun

    2016-08-01

    Surface-modified graphite for application as an anode material in lithium ion batteries was obtained by etching with KOH under mild conditions without high-temperature annealing. The surface of the etched graphite is covered with many nano-sized pores that act as entrances for lithium ions during the charging process. As compared with pristine graphite and other references such as pitch-coated or etched graphite samples with annealing, our non-annealed etched graphite exhibits excellent electrochemical properties, particularly at fast charging rates of over 2.5 C. While avoidance of the trade-off between increase of irreversible capacity and good rate capability has previously been a main concern in highly porous carbonaceous materials, we show that the slightly larger surface area created by the etching does not induce a significant increase of irreversible capacity. This study shows that it is important to limit the size of pores to the nanometer scale for excellent battery performance, which is possible by etching under relatively mild conditions.

  3. One-Year Clinical Evaluation of the Bonding Effectiveness of a One-Step, Self-Etch Adhesive in Noncarious Cervical Lesion Therapy

    PubMed Central

    Faye, Babacar; Sarr, Mouhamed; Bane, Khaly; Aidara, Adjaratou Wakha; Niang, Seydina Ousmane; Kane, Abdoul Wakhabe

    2015-01-01

    This study evaluated the one-year clinical performance of a one-step, self-etch adhesive (Optibond All-in-One, Kerr, CA, USA) combined with a composite (Herculite XRV Ultra, Kerr Hawe, CA, USA) to restore NCCLs with or without prior acid etching. Restorations performed by the same practitioner were evaluated at baseline and after 3, 6, and 12 months using modified USPHS criteria. At 6 months, the recall rate was 100%. The retention rate was 84.2% for restorations with prior acid etching, but statistically significant differences were observed between baseline and 6 months. Without acid etching, the retention rate was 77%, and no statistically significant difference was noted between 3 and 6 months. Marginal integrity (93.7% with and 87.7% without acid etching) and discoloration (95.3% with and 92.9% without acid etching) were scored as Alpha or Bravo, with better results after acid etching. After one year, the recall rate was 58.06%. Loss of pulp vitality, postoperative sensitivity, or secondary caries were not observed. After one year retention rate was of 90.6% and 76.9% with and without acid conditioning. Optibond All-in-One performs at a satisfactory clinical performance level for restoration of NCCLs after 12 months especially after acid etching. PMID:25810720

  4. Photoelectrochemical etching of epitaxial InGaN thin films: Self-limited kinetics and nanostructuring

    SciTech Connect

    Xiao, Xiaoyin; Fischer, Arthur J.; Coltrin, Michael E.; Lu, Ping; Koleske, Daniel D.; Wang, George T.; Polsky, Ronen; Tsao, Jeffrey Y.

    2014-10-22

    We report here the characteristics of photoelectrochemical (PEC) etching of epitaxial InGaN semiconductor thin films using narrowband lasers with linewidth less than ~1 nm. In the initial stages of PEC etching, when the thin film is flat, characteristic voltammogram shapes are observed. At low photo-excitation rates, voltammograms are S-shaped, indicating the onset of a voltage-independent rate-limiting process associated with electron-hole-pair creation and/or annihilation. At high photo-excitation rates, voltammograms are superlinear in shape, indicating, for the voltage ranges studied here, a voltage-dependent rate-limiting process associated with surface electrochemical oxidation. As PEC etching proceeds, the thin film becomes rough at the nanoscale, and ultimately evolves into an ensemble of nanoparticles. As a result, this change in InGaN film volume and morphology leads to a characteristic dependence of PEC etch rate on time: an incubation time, followed by a rise, then a peak, then a slow decay.

  5. Photoelectrochemical etching of epitaxial InGaN thin films: Self-limited kinetics and nanostructuring

    DOE PAGES

    Xiao, Xiaoyin; Fischer, Arthur J.; Coltrin, Michael E.; ...

    2014-10-22

    We report here the characteristics of photoelectrochemical (PEC) etching of epitaxial InGaN semiconductor thin films using narrowband lasers with linewidth less than ~1 nm. In the initial stages of PEC etching, when the thin film is flat, characteristic voltammogram shapes are observed. At low photo-excitation rates, voltammograms are S-shaped, indicating the onset of a voltage-independent rate-limiting process associated with electron-hole-pair creation and/or annihilation. At high photo-excitation rates, voltammograms are superlinear in shape, indicating, for the voltage ranges studied here, a voltage-dependent rate-limiting process associated with surface electrochemical oxidation. As PEC etching proceeds, the thin film becomes rough at the nanoscale,more » and ultimately evolves into an ensemble of nanoparticles. As a result, this change in InGaN film volume and morphology leads to a characteristic dependence of PEC etch rate on time: an incubation time, followed by a rise, then a peak, then a slow decay.« less

  6. Adhesives bonded to erbium:yttrium-aluminum-garnet laser-irradiated dentin: transmission electron microscopy, scanning electron microscopy and tensile bond strength analyses.

    PubMed

    Ramos, Andreia Cristina Bastos; Esteves-Oliveira, Marcella; Arana-Chavez, Victor E; de Paula Eduardo, Carlos

    2010-03-01

    The aim of this in vitro study was to investigate the effect of erbium:yttrium-aluminum-garnet (Er:YAG) laser irradiation on dentinal collagen by transmission electron microscopy and to analyze the resin-dentin interface by scanning electron microscopy. A tensile bond strength test was also applied. Specimens from 69 sound human third molars were randomly divided into three groups: control (no laser), and two irradiated groups, laser 250 (250 mJ/2 Hz) and laser 400 (400 mJ/4 Hz). Then, specimens were restored with two adhesive systems, an etch-and-rinse or a self-etch system. Although ultrastructural examination showed a modified surface in the irradiated dentin, there was no statistical difference in bond strength values between the laser groups and controls (P < 0.05). In conclusion, the use of Er:YAG laser for ablating human dentin did not alter the main adhesion parameters when compared with those obtained by conventional methods, thus reinforcing its use in restorative dentistry.

  7. Determination of etching characteristics of a vacuum generators AG21 argon-ion gun by interference colour and ellipsometric assessment of craters etched in tantalum oxide films

    NASA Astrophysics Data System (ADS)

    Treverton, J. A.; Rosenfeld, A.

    1990-11-01

    Interference-coloured tantalum oxide films were used in a qualitative and quantitative assessment of crater shapes formed by a Vacuum Generators AG21 argon-ion gun. Changes in interference colours, as a result of argon etching, clearly showed the elliptical shape of the craters formed and, under suitable circumstances, the elliptical contours of constant thickness around the crater walls. Quantitative assessment by scanning ellipsometry established that craters have approximately Gaussian cross-sections. However, in certain areas of the crater the cross-section is modified as a result of the influence of a small diameter beam of neutrals atom within the ion beam. Deviations from the Gaussian cross-sections also occur after prolonged etching.

  8. Streamlined etch integration with a unique neutral layer for self-assembled block copolymers (BCPs)

    NASA Astrophysics Data System (ADS)

    Hockey, Mary Ann; Xu, Kui; Wang, Yubao; Guerrero, Douglas J.; Calderas, Eric

    2014-03-01

    A multifunctional hardmask neutral layer (HM NL) was developed to improve etch resistance capabilities, enhance reflectance control, and match the surface energy properties required for polystyrene block copolymers (PS-b-PMMA). This HM NL minimizes the number of substrate deposition steps required in graphoepitaxy directed self-assembly (DSA) process flows. A separate brush layer is replaced by incorporating neutral layer properties into the hardmask to achieve microphase separation of BCP during thermal annealing. The reflection control and etch resistance capabilities are inherent in the chemical composition, thus eliminating the need for separate thin film layers to address absorbance and etch criteria. We initially demonstrated successful implementation of the HM NL using conventional PS-b-PMMA. A series of BCP formulations were synthesized with L0 values ranging from 28 nm to 17 nm to test the versatility of the HM NL. Quality "fingerprint" patterns or microphase separation using 230°-250°C annealing for 3-5 minutes was achieved for an array of modified BCP materials. The HM NL had water contact angles at 78°-80° and polarities in the 5-6 dyne/cm range. The scope of BCP platform compositions evaluated consists of a 20° water contact angle variance and a 10-dyne/cm range in polarities. All BCP derivatives were coated directly onto the HM NL followed by thermal annealing followed by SEM analysis for effective "fingerprint" patterns. We offer a simplified alternative path for high etch resistance in a graphoepitaxy DSA flow employing a single-layer hardmask for etch resistance demonstrated to be compatible with diverse BCP-modified chemical formulations.

  9. Electronic and crystalline structure of Si/SiO 2 interface modified by ArF excimer laser

    NASA Astrophysics Data System (ADS)

    Cháb, V.; Lukeš, I.; Ondřejček, M.; Jiříček, P.

    The native oxide layers on Si(100) surface were irradiated under UHV conditions by an ArF excimer laser pulses with energy density varied between melting and evaporating thresholds. The resulting changes were studied by LEED, AES and UPS. The increase of the energy density up to evaporation threshold results in the recrystallisation of native oxide layer. The pulses with energy densities just above the evaporation threshold ablate the top layer leaving an ordered and atomicaly clean surface. The observed (1x1) surface reconstruction is probably stabilised by strains introduced during rapid melting and quenching of the topmost layers. The surface electronic structure is dominated by random satisfaction of dangling bonds swearing a well defined surface states observed on (2x1)Si(100) surface.

  10. Is total-etch dead? Evidence suggests otherwise.

    PubMed

    Alex, Gary

    2012-01-01

    Both the total-etch and self-etching systems of today have the potential to provide durable adhesive interface, and despite the proclamations of some, total-etch is alive and well. Indeed, evidence indicates that a viable and growing market remains for total-etch adhesive systems. This paper will discuss the origins, evolution, and idiosyncrasies of the total-etch technique as well as its place in dentistry today. New innovations, the use of antimicrobials to inhibit matrix metalloproteinases (MMPs), and sensitivity issues will also be discussed.

  11. Chemically assisted ion beam etching of polycrystalline and (100)tungsten

    NASA Technical Reports Server (NTRS)

    Garner, Charles

    1987-01-01

    A chemically assisted ion-beam etching technique is described which employs an ion beam from an electron-bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 microns thick with good anisotropy and pattern definition over areas of 30 sq mm, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred-orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling-wave tubes to a controlled porosity.

  12. Bulk Etch Rate and Swell Rate of CR-39

    NASA Astrophysics Data System (ADS)

    Clarkson, David; Ume, Rubab; Sheets, Rebecca; Regan, Sean; Sangster, Craig; Padalino, Stephen; McLean, James

    2016-10-01

    The use of CR-39 plastic as a Solid State Nuclear Track Detector is an effective technique for obtaining data in high-energy particle experiments including inertial confinement fusion. To reveal particle tracks after irradiation, CR-39 is chemically etched in NaOH at 80°C, producing micron-scale signal pits at the nuclear track sites. The development of these pits depends on both the bulk etch rate and the faster etch rate along the track, and is complicated by swelling as water is absorbed. Contrary to common etching models, we find the bulk etch rate to be depth dependent within 15 μ m of the surface, as revealed by swelling TASTRACK CR-39 pieces to their maximum capacity prior to etching. The bulk etch rate was measured using the standard mass method as well as the fission fragment track diameter method. Combining models of swelling and etching rates predicts the progress of bulk etching during a standard etch, without pre-swelling. This result has implications for the understanding the chemistry of the etch process, as well as the outcome of CR-39 surface preparation methods. Funded in part by a LLE contract through the DOE.

  13. Dry-etch resistance of fluorine functionalized polymers

    NASA Astrophysics Data System (ADS)

    Koh, Meiten; Ishikawa, Takuji; Araki, Takayuki; Aoyama, Hirokazu; Yamashita, Tsuneo; Yamazaki, Tamio; Watanabe, Hiroyuki; Toriumi, Minoru; Itani, Toshiro

    2002-07-01

    The reactive ion etch (RIE) properties of fluorine funtionalized polymers in which fluorine atoms were incorporated in the main chain were examined. There was a tendency that the etching rates of these polymers were higher as lower the fluorine contents. The existing four models such as the Ohnishi model, the Kunz model, the Ohfuji model and the Kishimura model were applied to explain the correlation between the etching rates and the polymer compositions or structures, but the errors were too large to explain the relationship. A new model has developed to explain the effect of the fluorine incorporation to the dry etch resistance. The model assumed that there would be a correlation between the number of main chain fluorine atoms and the dry etch resistance, and the main chain fluorine incorporation would increase the dry etch resistance. The model could explain the dry etch resistance of the main chain fluorine incorporated polymers with adequate accuracy.

  14. Structure dependent hydrogen induced etching features of graphene crystals

    NASA Astrophysics Data System (ADS)

    Thangaraja, Amutha; Shinde, Sachin M.; Kalita, Golap; Papon, Remi; Sharma, Subash; Vishwakarma, Riteshkumar; Sharma, Kamal P.; Tanemura, Masaki

    2015-06-01

    H2 induced etching of graphene is of significant interest to understand graphene growth process as well as to fabricate nanoribbons and various other structures. Here, we demonstrate the structure dependent H2 induced etching behavior of graphene crystals. We synthesized graphene crystals on electro-polished Cu foil by an atmospheric pressure chemical vapor deposition process, where some of the crystals showed hexagonal shaped snowflake-dendritic morphology. Significant differences in H2 induced etching behavior were observed for the snowflake-dendritic and regular graphene crystals by annealing in a gas mixture of H2 and Ar. The regular graphene crystals were etched anisotropically creating hexagonal holes with pronounced edges, while etching of all the dendritic crystals occurred from the branches of lobs creating symmetrical fractal structures. The etching behavior provides important clue of graphene nucleation and growth as well as their selective etching to fabricate well-defined structures for nanoelectronics.

  15. Modified laser-annealing process for improving the quality of electrical P-N junctions and devices

    DOEpatents

    Wood, Richard F.; Young, Rosa T.

    1984-01-01

    The invention is a process for producing improved electrical-junction devices. The invention is applicable, for example, to a process in which a light-sensitive electrical-junction device is produced by (1) providing a body of crystalline semiconductor material having a doped surface layer, (2) irradiating the layer with at least one laser pulse to effect melting of the layer, (3) permitting recrystallization of the melted layer, and (4) providing the resulting body with electrical contacts. In accordance with the invention, the fill-factor and open-circuit-voltage parameters of the device are increased by conducting the irradiation with the substrate as a whole at a selected elevated temperature, the temperature being selected to effect a reduction in the rate of the recrystallization but insufficient to effect substantial migration of impurities within the body. In the case of doped silicon substrates, the substrate may be heated to a temperature in the range of from about 200.degree. C. to 500.degree. C.

  16. Enlarging the linear response range of velocity with optimum imaging parameters and modified data processing in laser speckle imaging

    NASA Astrophysics Data System (ADS)

    Qiu, Jianjun; Li, Pengcheng; Ul'yanov, Sergey S.; Zeng, Shaoqun; Luo, Qingming

    2008-02-01

    Laser speckle imaging (LSI) technique is considered as a promising method of accessing cerebral blood flow (CBF) of animals for its high spatiotemporal resolution and simplicity. It is important in LSI that optimum imaging parameters and limited noises should be confirmed to promote the imaging precision. We investigated in this paper different factors which may affect the imaging results with a moving white plate model, and then proposed a method of enlarging the linear response range of velocity. Through experiment, we proposed in our LSI system the optimum imaging parameters, including the numerical aperture and magnification of microscopy, the integration time, the gain mode of CCD camera. The average intensity was found optimum at about 800 counts out of 4096 grey level, which permits the highest contrast in our experiment. To eliminate the influence of uneven illumination, a direct current weight of 27 counts was subtracted during data processing. The result indicated that the relationship between measured velocity and the real one remained linear with R2 equaling to 0.99 throughout the scale of 80 mm/s.

  17. Modified multiscale sample entropy computation of laser speckle contrast images and comparison with the original multiscale entropy algorithm

    NASA Astrophysics Data System (ADS)

    Humeau-Heurtier, Anne; Mahé, Guillaume; Abraham, Pierre

    2015-12-01

    Laser speckle contrast imaging (LSCI) enables a noninvasive monitoring of microvascular perfusion. Some studies have proposed to extract information from LSCI data through their multiscale entropy (MSE). However, for reaching a large range of scales, the original MSE algorithm may require long recordings for reliability. Recently, a novel approach to compute MSE with shorter data sets has been proposed: the short-time MSE (sMSE). Our goal is to apply, for the first time, the sMSE algorithm in LSCI data and to compare results with those given by the original MSE. Moreover, we apply the original MSE algorithm on data of different lengths and compare results with those given by longer recordings. For this purpose, synthetic signals and 192 LSCI regions of interest (ROIs) of different sizes are processed. Our results show that the sMSE algorithm is valid to compute the MSE of LSCI data. Moreover, with time series shorter than those initially proposed, the sMSE and original MSE algorithms give results with no statistical difference from those of the original MSE algorithm with longer data sets. The minimal acceptable length depends on the ROI size. Comparisons of MSE from healthy and pathological subjects can be performed with shorter data sets than those proposed until now.

  18. Post-processing of fused silica and its effects on damage resistance to nanosecond pulsed UV lasers.

    PubMed

    Ye, Hui; Li, Yaguo; Zhang, Qinghua; Wang, Wei; Yuan, Zhigang; Wang, Jian; Xu, Qiao

    2016-04-10

    HF-based (hydrofluoric acid) chemical etching has been a widely accepted technique to improve the laser damage performance of fused silica optics and ensure high-power UV laser systems at designed fluence. Etching processes such as acid concentration, composition, material removal amount, and etching state (etching with additional acoustic power or not) may have a great impact on the laser-induced damage threshold (LIDT) of treated sample surfaces. In order to find out the effects of these factors, we utilized the Taguchi method to determine the etching conditions that are helpful in raising the LIDT. Our results show that the most influential factors are concentration of etchants and the material etched away from the viewpoint of damage performance of fused silica optics. In addition, the additional acoustic power (∼0.6  W·cm-2) may not benefit the etching rate and damage performance of fused silica. Moreover, the post-cleaning procedure of etched samples is also important in damage performances of fused silica optics. Different post-cleaning procedures were, thus, experiments on samples treated under the same etching conditions. It is found that the "spraying + rinsing + spraying" cleaning process is favorable to the removal of etching-induced deposits. Residuals on the etched surface are harmful to surface roughness and optical transmission as well as laser damage performance.

  19. Modeling of plasma etch profiles with ions and reactive neutrals

    NASA Astrophysics Data System (ADS)

    Wang, Chungdar Daniel

    1999-11-01

    The simulation of plasma etch profiles of semiconductor trenches in the wafer processing of integrated circuits is developed in a mixed analytic/numerical approach. The main contributions of this study are the derivation and use of explicit analytical expressions for the etch rates and the computation of the etch profiles by standard computer packages. The computation of the etch profiles is efficient, is used as a benchmark for more complex numerical computer codes and illuminates the parameter dependence. The etch rate due to the ions is assumed proportional to the ion energy flux as suggested by experimental evidence. The shadowing due to the mask is included in the simplified derivation of the ion energy flux in cylindrical velocity coordinates for a two-temperature ion drifting Maxwellian. Neutrals with varying sticking coefficients are modeled by interpolation between the etch rate for shadowed neutrals with unity sticking coefficients and isotropic neutrals. The etch profiles are determined by the method of characteristics from the nonlinear evolution equation for the etch profile surface. Standard Matlab packages for the graphics and integration of the ordinary differential equations for the characteristics make the computation of etch profiles more efficient and more transparent than many complicated computer codes. The SEM images for trenches etched in silicon in a SF6 plasma in a RIE reactor are modeled by the simulation method for etch profiles. The etch rate is a linear combination of the etch rates of ions and neutrals in the ion flux-limited regime. Monte Carlo simulation of ion distribution functions in a chlorine plasma are fit by a simulated annealing procedure to a set of two-temperature drifting Maxwellians. The Monte Carlo simulations are noisy due to insufficient numbers of simulation particles. Smoothing of the distribution functions produces the expected bimodal ion distribution functions in the ICP reactor. The resultant etch profiles for

  20. Digital Electrochemical Etching of Compound Semiconductors

    DTIC Science & Technology

    1992-05-26

    Cd is stripped by oxidation to Cd2+. Underpotentials are chosen so that only the top atomic layer of an element is removed. Potentials sufficient to...the compound. The two potentials of the square wave correspond to underpotential stripping potentials for Cd and Te respectively. Directions for the...for the etching of CdTe. For CdTe, Te is stripped by reduction to Tel while Cd is stripped by oxidation to Cd2 . Underpotentials are chosen o that only

  1. Plasma etching for advanced polymer optical devices

    NASA Astrophysics Data System (ADS)

    Bitting, Donald S.

    Plasma etching is a common microfabrication technique which can be applied to polymers as well as glasses, metals, and semiconductors. The fabrication of low loss and reliable polymer optical devices commonly makes use of advanced microfabrication processing techniques similar in nature to those utilized in standard semiconductor fabrication technology. Among these techniques, plasma/reactive ion etching is commonly used in the formation of waveguiding core structures. Plasma etching is a powerful processing technique with many potential applications in the emerging field of polymer optical device fabrication. One such promising application explored in this study is in the area of thin film-substrate adhesion enhancement. Two approaches involving plasma processing were evaluated to improve substrate-thin film adhesion in the production of polymer waveguide optical devices. Plasma treatment of polymer substrates such as polycarbonate has been studied to promote the adhesion of fluoropolymer thin film coatings for waveguide device fabrication. The effects of blanket oxygen plasma etchback on substrate, microstructural substrate feature formation, and the long term performance and reliability of these methods were investigated. Use of a blanket oxygen plasma to alter the polycarbonate surface prior to fluoropolymer casting was found to have positive but limited capability to improve the adhesive strength between these polymers. Experiments show a strong correlation between surface roughness and adhesion strength. The formation of small scale surface features using microlithography and plasma etching on the polycarbonate surface proved to provide outstanding adhesion strength when compared to any other known treatment methods. Long term environmental performance testing of these surface treatment methods provided validating data. Test results showed these process approaches to be effective solutions to the problem of adhesion between hydrocarbon based polymer

  2. ZERODUR: bending strength data for etched surfaces

    NASA Astrophysics Data System (ADS)

    Hartmann, Peter; Leys, Antoine; Carré, Antoine; Kerz, Franca; Westerhoff, Thomas

    2014-07-01

    In a continuous effort since 2007 a considerable amount of new data and information has been gathered on the bending strength of the extremely low thermal expansion glass ceramic ZERODUR®. By fitting a three parameter Weibull distribution to the data it could be shown that for homogenously ground surfaces minimum breakage stresses exist lying much higher than the previously applied design limits. In order to achieve even higher allowable stress values diamond grain ground surfaces have been acid etched, a procedure widely accepted as strength increasing measure. If surfaces are etched taking off layers with thickness which are comparable to the maximum micro crack depth of the preceding grinding process they also show statistical distributions compatible with a three parameter Weibull distribution. SCHOTT has performed additional measurement series with etch solutions with variable composition testing the applicability of this distribution and the possibility to achieve further increase of the minimum breakage stress. For long term loading applications strength change with time and environmental media are important. The parameter needed for prediction calculations which is combining these influences is the stress corrosion constant. Results from the past differ significantly from each other. On the basis of new investigations better information will be provided for choosing the best value for the given application conditions.

  3. Etching of moldavities under natural conditions

    NASA Technical Reports Server (NTRS)

    Knobloch, V.; Knoblochova, Z.; Urbanec, Z.

    1983-01-01

    The hypothesis that a part of the lechatellierites which originated by etching from a basic moldavite mass became broken off after deposition of moldavite in the sedimentation layer is advanced. Those found close to the original moldavite were measured for statistical averaging of length. The average length of lechatelierite fibers per cubic mm of moldavite mass volume was determined by measurement under a microscope in toluene. The data were used to calculate the depth of the moldavite layer that had to be etched to produce the corresponding amount of lechatelierite fragments. The calculations from five "fields" of moldavite surface, where layers of fixed lechatelierite fragments were preserved, produced values of 2.0, 3.1, 3.5, 3.9 and 4.5. Due to inadvertent loss of some fragments the determined values are somewhat lower than those found in references. The difference may be explained by the fact that the depth of the layer is only that caused by etching after moldavite deposition.

  4. A comparative study of shear bond strength of orthodontic bracket after acid-etched and Er:YAG treatment on enamel surface

    NASA Astrophysics Data System (ADS)

    Leão, Juliana C.; Mota, Cláudia C. B. O.; Cassimiro-silva, Patricia F.; Gomes, Anderson S. L.

    2016-02-01

    This study aimed to evaluate the shear bond strength (SBS) of teeth prepared for orthodontic bracket bonding with 37% phosphoric acid and Er:YAG laser. Forty bovine incisors were divided into two groups. In Group I, the teeth were conditioned with 37% phosphoric acid and brackets were bonded with Transbond XT; in Group II, the teeth were irradiated with Er:YAG and bonding with Transbond XT. After SBS test, the adhesive remnant index was determined. Adhesion to dental hard tissues after Er:YAG laser etching was inferior to that obtained after acid etching but exceeded what is believed to be clinically sufficient strength, and therefore can be used in patients.

  5. Efficiency of Amorphous Calcium Phosphate–Containing Orthodontic Composite and Resin Modified Glass Ionomer on Demineralization Evaluated By a New Laser Fluorescence Device

    PubMed Central

    Uysal, Tancan; Amasyali, Mihri; Koyuturk, Alp Erdin; Sagdic, Deniz

    2009-01-01

    Objectives: The aim of this in vitro study was to compare the efficacy of Amorphous Calcium Phosphate (ACP)-containing orthodontic composite and resin-modified glass ionomer cement (RMGIC) on enamel demineralization adjacent to orthodontic brackets evaluated by a new laser fluorescence device. Methods: Sixty extracted maxillary premolars were used in the present study. Twenty orthodontic brackets were bonded with ACP-containing orthodontic adhesive (Aegis-Ortho), 20 were bonded with RMGIC (Fuji Ortho LC) and 20 were bonded with Transbond XT composite as the control. All samples were then cycled for 21 days through a daily procedure of demineralization for 6 hours and remineralization for 17 hours. After this procedure, demineralization evaluations were undertaken by a pen-type laser fluorescence device (DIAGNO-dent Pen). Analysis of variance (ANOVA) and Tukey test was used for statistical evaluation, at P<.05 level. Results: According to ANOVA, significant demineralization variations (ΔD) were determined among groups (F=6.650; P<.01). The ACP-containing composite showed the lowest (mean: 8.98±2.38) and the control composite showed the highest (mean:12.15±3.83) ΔD, during 21 days demineralization process (P<.01). Significant difference was also observed between the ΔD scores of the RMGIC (mean: 9.24±2.73) and control (P<.05). No significant differences was found in preventive effects of ACP-containing composite and RMGIC (P<.05) against demineralization. Conclusions: The use of both ACP-containing orthodontic composite and RMGIC should be recommended for any at-risk orthodontic patient to provide preventive actions and potentially remineralize subclinical enamel demineralization. PMID:19421393

  6. Three step deep reactive ion etch for high density trench etching

    NASA Astrophysics Data System (ADS)

    Lips, B.; Puers, R.

    2016-10-01

    A three step Deep Reactive Ion Etch (DRIE) process is developed to etch trenches of 10μm wide to a depth of 130μm into silicon with an etch rate of 2.5μm min-1. The aim of this process is to obtain sidewalls with an angle close to 90°. The process allows the etching of multiple trenches with high aspect ratios that are closely placed together. A three step approach is used as opposed to the more conventional two step approach in an attempt to improve the etching selectivity with respect to the masking material. By doing so, a simple AZ6632 positive photoresist could be used instead of the more commonly used metal masks which are harder to remove afterwards. In order to develop this process, four parameters, which are the bias power, processing pressure, step times and number of cycles, are evaluated an optimized on a PlasmaPro 300 Cobra DRIE tool from Oxford Plasma Technology.

  7. Morphological evaluation of new total etching and self etching adhesive system interfaces with dentin

    PubMed Central

    Hegde, Mithra N; Hegde, Priyadarshini; Chandra, C Ravi

    2012-01-01

    Aim: The purpose of this study is to evaluate the resin-dentin interface, quality of the hybrid layer of total-etching and self-etching adhesive systems under scanning electron microscopy (SEM). Materials and Methods: Class V cavities were prepared in 40 extracted human molars. In Group I XP bond (Dentsply), in Group II Adper Single Bond II (3M ESPE), in Group III Adper Easy One (3M ESPE), and in Group IV Xeno V (Dentsply) were applied. Teeth were restored with resin composite, subjected to thermocycling, and sectioned in Buccolingual plane. The samples were demineralized using 6N HCl, for 30 sec, and deproteinized with 2.5% NaOCl for 10 min, gold sputtered, and viewed using a scanning electron microscope. Results: Among the total-etch systems used, the XP Bond showed a clear, thick hybrid layer, with long resin tags and few voids. Among the self-etch adhesive systems, the Xeno V did not show a clearly recognizable hybrid layer, but there were no voids and continuous adaptation was seen with the dentin. Conclusion: The adaptation of self-etch adhesives to the resin-dentin interface was good without voids or separation of phases; showing a thin, continuous hybrid layer. PMID:22557814

  8. OPTIMIZING COLLAGEN TRANSPORT THROUGH TRACK-ETCHED NANOPORES

    PubMed Central

    Bueno, Ericka M.; Ruberti, Jeffrey W.

    2008-01-01

    Polymer transport through nanopores is a potentially powerful tool for separation and organization of molecules in biotechnology applications. Our goal is to produce aligned collagen fibrils by mimicking cell-mediated collagen assembly: driving collagen monomers in solution through the aligned nanopores in track-etched membranes followed by fibrillogenesis at the pore exit. We examined type I atelo-collagen monomer transport in neutral, cold solution through polycarbonate track-etched membranes comprising 80-nm-diameter, 6-μm-long pores at 2% areal fraction. Source concentrations of 1.0, 2.8 and 7.0 mg/ml and pressure differentials of 0, 10 and 20 inH2O were used. Membrane surfaces were hydrophilized via covalent poly(ethylene-glycol) binding to limit solute-membrane interaction. Collagen transport through the nanopores was a non-intuitive process due to the complex behavior of this associating molecule in semi-dilute solution. Nonetheless, a modified open pore model provided reasonable predictions of transport parameters. Transport rates were concentration- and pressure-dependent, with diffusivities across the membrane in semi-dilute solution two-fold those in dilute solution, possibly via cooperative diffusion or polymer entrainment. The most significant enhancement of collagen transport was accomplished by membrane hydrophilization. The highest concentration transported (5.99±2.58 mg/ml) with the highest monomer flux (2.60±0.49 ×103 molecules s-1 pore-1) was observed using 2.8 mg collagen/ml, 10 inH2O and hydrophilic membranes. PMID:21394216

  9. ICP etching of silicon for micro and nanoscale devices

    NASA Astrophysics Data System (ADS)

    Henry, Michael David

    The physical structuring of silicon is one of the cornerstones of modern microelectronics and integrated circuits. Typical structuring of silicon requires generating a plasma to chemically or physically etch silicon. Although many tools have been created to do this, the most finely honed tool is the Inductively Couple Plasma Reactive Ion Etcher. This tool has the ability to finesse structures from silicon unachievable on other machines. Extracting structures such as high aspect ratio silicon nanowires requires more than just this tool, however. It requires etch masks which can adequately protect the silicon without interacting with the etching plasma and highly tuned etch chemistry able to protect the silicon structures during the etching process. In the work presented here, three highly tuned etches for silicon, and its oxide, will be described in detail. The etches presented utilize a type of etch chemistry which provides passivation while simultaneously etching, thus permitting silicon structures previously unattainable. To cover the range of applications, one etch is tuned for deep reactive ion etching of high aspect ratio micro-structures in silicon, while another is tuned for high aspect ratio nanoscale structures. The third etch described is tuned for creating structures in silicon dioxide. Following the description of these etches, two etch masks for silicon will be described. The first mask will detail a highly selective etch mask uniquely capable of protecting silicon for both etches described while being compatible with mainstream semiconductor fabrication facilities. This mask is aluminum oxide. The second mask detailed permits for a completely dry lithography on the micro and nanoscale, FIB implanted Ga etch masks. The third chapter will describe the fabrication and in situ electrical testing of silicon nanowires and nanopillars created using the methods previously described. A unique method for contacting these nanowires is also described which has

  10. Influence of pH, bleaching agents, and acid etching on surface wear of bovine enamel

    PubMed Central

    Soares, Ana Flávia; Bombonatti, Juliana Fraga Soares; Alencar, Marina Studart; Consolmagno, Elaine Cristina; Honório, Heitor Marques; Mondelli, Rafael Francisco Lia

    2016-01-01

    ABSTRACT Development of new materials for tooth bleaching justifies the need for studies to evaluate the changes in the enamel surface caused by different bleaching protocols. Objective The aim of this study was to evaluate the bovine dental enamel wear in function of different bleaching gel protocols, acid etching and pH variation. Material and Methods Sixty fragments of bovine teeth were cut, obtaining a control and test areas. In the test area, one half received etching followed by a bleaching gel application, and the other half, only the bleaching gel. The fragments were randomly divided into six groups (n=10), each one received one bleaching session with five hydrogen peroxide gel applications of 8 min, activated with hybrid light, diode laser/blue LED (HL) or diode laser/violet LED (VHL) (experimental): Control (C); 35% Total Blanc Office (TBO35HL); 35% Lase Peroxide Sensy (LPS35HL); 25% Lase Peroxide Sensy II (LPS25HL); 15% Lase Peroxide Lite (LPL15HL); and 10% hydrogen peroxide (experimental) (EXP10VHL). pH values were determined by a pHmeter at the initial and final time periods. Specimens were stored, subjected to simulated brushing cycles, and the superficial wear was determined (μm). ANOVA and Tukey´s tests were applied (α=0.05). Results The pH showed a slight decrease, except for Group LPL15HL. Group LPS25HL showed the highest degree of wear, with and without etching. Conclusion There was a decrease from the initial to the final pH. Different bleaching gels were able to increase the surface wear values after simulated brushing. Acid etching before bleaching increased surface wear values in all groups. PMID:27008254

  11. [Restoration of composite on etched stainless steel crowns. (1)].

    PubMed

    Goto, G; Zang, Y; Hosoya, Y

    1990-01-01

    Object of investigation The retention of composite resin to etched stainless steel crowns was tested as a possible method for restoring primary anterior teeth. Method employed 1) SEM observation Stainless steel crowns (Sankin Manufacture Co.) were etched with an aqua resia to create surface roughness and undercut to retain the composite resin to the crowns. Etching times were 1, 2, 3, 5, 8, 10 and 20 minutes, then washed in a 70% alcohol solution using an ultrasonic washer and dried. A total of 96 etched samples and non etched control samples were observed through the scanning electron microscope (Hitachi 520). 2) Shear bond strength test Stainless steel crowns were etched in an aqua resia from 1 to 20 minutes, then washed and dried. Composite resin (Photo Clearfil A, Kuraray Co.) with the bonding agent was placed on the crowns and the shear bond strength was tested in 56 samples using an Autograph (DCS-500, Shimazu). Results 1) SEM observation showed that the etching surface of stainless steel crowns created surface roughness and undercut. The most desirable surface was obtained in the 3 to 5 minute etching time specimens. 2) The highest bond strength was obtained in a 3 minute etching specimen. It was 42.12 MPa, although 29.26 MPa in mean value. Conclusion Etching with an aqua resia increased the adherence of composite resin to the surface of stainless steel crowns.

  12. Real-time monitoring of reactive species in downstream etch reactor by VUV broad-band absorption spectroscopy

    NASA Astrophysics Data System (ADS)

    Soriano, R.; Vallier, L.; Cunge, G.; Sadeghi, N.

    2016-09-01

    Plasma etching of nanometric size, high aspect-ratio structures is more challenging at each new technological node. Remote plasmas are beginning to find use when damages on nanostructures by ion bombardment become critical or when etching with high selectivity on different materials present on the wafer is necessary (i . e . tungsten oxide etching with fluorine and hydrogen containing plasmas in remote reactor from AMAT). Furthermore, it is expected that downstream plasma will replace many wet chemical etching processes to alleviate the issue of pattern collapses caused by capillary forces when nanometer size high aspect ratio structures are immersed in liquids. In these downstream plasmas, radicals are the main active species and a control of their density is of prime importance. Most of gases used and radicals produced in etching plasmas (HBr, BrCl, Br2, NF3, CH2F2,...) have strong absorption bands in the vacuum UV spectral region and we have shown that very low concentration of these species can be detected by VUV absorption. We have recently improved the technique by using a VUV CCD camera, instead of the PMT, which render possible the Broad-Band absorption spectroscopy in the 120-200 nm range, with a deuterium lamp, or a laser produced xenon arc lamp as light source. The multi-spectral detection ability of the CCD reduces the acquisition time to less than 1 second and can permit the real time control of the process control.

  13. Effect of acid etching of glass ionomer cement surface on the microleakage of sandwich restorations.

    PubMed

    Bona, Alvaro Della; Pinzetta, Caroline; Rosa, Vinícius

    2007-06-01

    The purposes of this study were to evaluate the sealing ability of different glass ionomer cements (GICs) used for sandwich restorations and to assess the effect of acid etching of GIC on microleakage at GIC-resin composite interface. Forty cavities were prepared on the proximal surfaces of 20 permanent human premolars (2 cavities per tooth), assigned to 4 groups (n=10) and restored as follows: Group CIE - conventional GIC (CI) was applied onto the axial and cervical cavity walls, allowed setting for 5 min and acid etched (E) along the cavity margins with 35% phosphoric acid for 15 s, washed for 30 s and water was blotted; the adhesive system was applied and light cured for 10 s, completing the restoration with composite resin light cured for 40 s; Group CIN - same as Group CIE, except for acid etching of the CI surface; Group RME - same as CIE, but using a resin modified GIC (RMGIC); Group RMN - same as Group RME, except for acid etching of the RMGIC surface. Specimens were soaked in 1% methylene blue dye solution at 24 degrees C for 24 h, rinsed under running water for 1 h, bisected longitudinally and dye penetration was measured following the ISO/TS 11405-2003 standard. Results were statistically analyzed by Kruskal-Wallis and chi-square tests (a=0.05). Dye penetration scores were as follow: CIE - 2.5; CIN - 2.5; RME - 0.9; and RMN - 0.6. The results suggest that phosphoric acid etching of GIC prior to the placement of composite resin does not improve the sealing ability of sandwich restorations. The RMGIC was more effective in preventing dye penetration at the GIC-resin composite-dentin interfaces than CI.

  14. Microleakage of Er:YAG laser and dental bur prepared cavities in primary teeth restored with different adhesive restorative materials.

    PubMed

    Baghalian, Ali; Nakhjavani, Yahya B; Hooshmand, Tabassom; Motahhary, Pouria; Bahramian, Hoda

    2013-11-01

    The purpose of this study was to evaluate and compare the effect of erbium:yttrium-aluminum-garnet (Er:YAG) laser irradiation and conventional dental bur cavity preparation on in vitro microleakage of class V cavities restored with different adhesive restorative materials and two types of self-etching adhesives in primary teeth. Standard class V cavities were prepared on 80 extracted primary, and the teeth were randomly divided into eight subgroups prepared either by dental bur or Er:YAG laser irradiation and then restored with self-cured glass ionomer (GI), resin-modified glass ionomer (RMGI), resin composite and Clearfil SE Bond (two-step self-etching adhesive), and resin composite and Clearfil S3 Bond (one-step self-etching adhesive). Restorations were finished and stored in distilled water at 37 °C for 24 h and then subjected to thermocycling. All the teeth were sealed with nail varnish, placed in a silver nitrate solution, and then vertically cut in a buccolingually direction. Subsequently, the specimens were evaluated for gingival and occlusal microleakage using a stereomicroscope. Data were analyzed using Kruskal-Wallis test followed by Mann-Whitney test. Wilcoxon test was used for comparing occlusal microleakage with gingival microleakage at p < 0.05. A higher degree of occlusal and gingival microleakage values for the teeth restored with GI or RMGI was obtained by both preparation methods compared with that of resin composites and the two self-etching primers. Er:YAG laser irradiation resulted in a significantly higher degree of microleakage only at the gingival margins for teeth restored with GI or RMGI, or composite and Clearfil S3 Bond compared with the bur preparation. The Er:YAG laser-prepared teeth restored with composite and Clearfil SE Bond demonstrated a better marginal seal on occlusal and gingival margins compared with that of bur-prepared cavities. The degree of microleakage in class V cavities was affected by the type of adhesive

  15. Comparison of fundus autofluorescence images acquired by the confocal scanning laser ophthalmoscope (488 nm excitation) and the modified Topcon fundus camera (580 nm excitation).

    PubMed

    Deli, A; Moetteli, L; Ambresin, A; Mantel, I

    2013-12-01

    To compare autofluorescence (AF) images obtained with the confocal scanning laser ophthalmoscope (using the Heidelberg retina angiograph; HRA) and the modified Topcon fundus camera, in a routine clinical setting. A prospective comparative study conducted at the Jules-Gonin Eye Hospital. Fifty-six patients from the medical retina clinic. All patients had complete ophthalmic slit-lamp and fundus examinations, colour and red-free fundus photography, AF imaging with both instruments, and fluorescein angiography. Cataract and fixation were graded clinically. AF patterns were analyzed for healthy and pathological features. Differences of image noise were analyzed by cataract grading and fixation. A total of 105 eyes were included. AF patterns discovered by the retina angiograph and the fundus camera images, respectively, were a dark optic disc in 72 % versus 15 %, a dark fovea in 92 % versus 4 %, sub- and intraretinal fluid visible as hyperautofluorescence on HRA images only, lipid exudates visible as hypoautofluorescence on HRA images only. The same autofluorescent pattern was found on both images for geographic atrophy, retinal pigment changes, drusen and haemorrhage. Image noise was significantly associated with the degree of cataract and/or poor fixation, favouring the fundus camera. Images acquired by the fundus camera before and after fluorescein angiography were identical. Fundus AF images differ according to the technical differences of the instruments used. Knowledge of these differences is important not only for correctly interpreting images, but also for selecting the most appropriate instrument for the clinical situation.

  16. Chemical etching and EDAX analysis of beryllium-free nickel-chromium ceramo-metal alloy.

    PubMed

    Atta, O M; Mosleh, I E; Shehata, M T

    1995-10-01

    A chemical etching technique is described for producing etch patterns in beryllium-free nickel chromium ceramo-metal alloy. Disc-shaped samples were chemically etched, evaluated with SEM and analysed by the EDAX technique. Scanning electron micrographs revealed, profound retentive cavities. The EDAX analysis provided a comprehensive interpretation of the etch mechanism. The obtained results show that the developed chemical etching has the potential to produce a highly retentive etched surface with less problematic and less technique sensitive than electrolytic etching.

  17. IC Fabrication Methods Improve Laser Diodes

    NASA Technical Reports Server (NTRS)

    Miller, M.; Pickhardt, V.

    1984-01-01

    Family of high-performance, tunable diode lasers developed for use as local oscillators in passive laser heterodyne spectrometer. Diodes fabricated using standard IC processes include photolithography, selective etching and vacuum deposition of metals and insulators. Packaging refinements improved thermal-cycling characteristics of diodes and increased room-temperature shelf life.

  18. Spin-on carbon based on fullerene derivatives as hardmask materials for high-aspect-ratio etching

    NASA Astrophysics Data System (ADS)

    Frommhold, Andreas; Palmer, Richard E.; Robinson, Alex P. G.

    2013-07-01

    The advance of lithographic resolution has made it necessary to adopt extremely thin photoresist films for the fabrication of "2× nm" structures in order to mitigate problems such as resist collapse during development but limiting achievable etch depths at the same time. By using multilayer hardmask stacks, a considerable increase in achievable aspect ratio is possible. We have previously presented a fullerene-based spin-on carbon hardmask material capable of high-aspect-ratio etching. We report our latest findings in material characterization of an original and a modified formulation. By using a higher adduct derivative fullerene, the solubility in industry-friendly solvents and thermal stability could be improved. The etching performance and materials characteristics of the new higher-adduct fullerene hardmask were found to be comparable to those of the original hardmask.

  19. Pulse-biased etching of Si3N4-layer in capacitively-coupled plasmas for nano-scale patterning of multi-level resist structures.

    PubMed

    Lee, Hyelim; Kim, Sechan; Choi, Gyuhyun; Lee, Nae-Eung

    2014-12-01

    Pulse-biased plasma etching of various dielectric layers is investigated for patterning nano-scale, multi-level resist (MLR) structures composed of multiple layers via dual-frequency, capacitively-coupled plasmas (CCPs). We compare the effects of pulse and continuous-wave (CW) biasing on the etch characteristics of a Si3N4 layer in CF4/CH2F2/O2/Aretch chemistries using a dual-frequency, superimposed CCP system. Pulse-biasing conditions using a low-frequency power source of 2 MHz were varied by controlling duty ratio, period time, power, and the gas flow ratio in the plasmas generated by the 27.12 MHz high-frequency power source. Application of pulse-biased plasma etching significantly affected the surface chemistry of the etched Si3N4 surfaces, and thus modified the etching characteristics of the Si3N4 layer. Pulse-biased etching was successfully applied to patterning of the nano-scale line and space pattern of Si3N4 in the MLR structure of KrF photoresist/bottom anti-reflected coating/SiO2/amorphous carbon layer/Si3N4. Pulse-biased etching is useful for tuning the patterning of nano-scale dielectric hard-mask layers in MLR structures.

  20. Effect of acid etching on bond strength of nanoionomer as an orthodontic bonding adhesive

    PubMed Central

    Khan, Saba; Verma, Sanjeev K.; Maheshwari, Sandhya

    2015-01-01

    Aims: A new Resin Modified Glass Ionomer Cement known as nanoionomer containing nanofillers of fluoroaluminosilicate glass and nanofiller 'clusters' has been introduced. An in-vitro study aimed at evaluating shear bond strength (SBS) and adhesive remnant index (ARI) of nanoionomer under etching/unetched condition for use as an orthodontic bonding agent. Material and Methods: A total of 75 extracted premolars were used, which were divided into three equal groups of 25 each: 1-Conventional adhesive (Enlight Light Cure, SDS, Ormco, CA, USA) was used after and etching with 37% phosphoric acid for 30 s, followed by Ortho Solo application 2-nanoionomer (Ketac™ N100, 3M, ESPE, St. Paul, MN, USA) was used after etching with 37% phosphoric acid for 30 s 3-nanoionomer was used without etching. The SBS testing was performed using a digital universal testing machine (UTM-G-410B, Shanta Engineering). Evaluation of ARI was done using scanning electron microscopy. The SBS were compared using ANOVA with post-hoc Tukey test for intergroup comparisons and ARI scores were compared with Chi-square test. Results: ANOVA (SBS, F = 104.75) and Chi-square (ARI, Chi-square = 30.71) tests revealed significant differences between groups (P < 0.01). The mean (SD) SBS achieved with conventional light cure adhesive was significantly higher (P < 0.05) (10.59 ± 2.03 Mpa, 95% CI, 9.74-11.41) than the nanoionomer groups (unetched 4.13 ± 0.88 Mpa, 95% CI, 3.79-4.47 and etched 9.32 ± 1.87 Mpa, 95% CI, 8.58-10.06). However, nanoionomer with etching, registered SBS in the clinically acceptable range of 5.9–7.8 MPa, as suggested by Reynolds (1975). The nanoionomer groups gave significantly lower ARI values than the conventional adhesive group. Conclusion: Based on this in-vitro study, nanoionomer with etching can be successfully used as an orthodontic bonding agent leaving less adhesive remnant on enamel surface, making cleaning easier. However, in-vivo studies are needed to confirm the validity

  1. Experiment and Results on Plasma Etching of SRF cavities

    SciTech Connect

    Upadhyay, Janardan; Im, Do; Peshl, J.; Vuskovic, Leposova; Popovic, Svetozar; Valente, Anne-Marie; Phillips, H. Lawrence

    2015-09-01

    The inner surfaces of SRF cavities are currently chemically treated (etched or electropolished) to achieve the state of the art RF performance. We designed an apparatus and developed a method for plasma etching of the inner surface for SRF cavities. The process parameters (pressure, power, gas concentration, diameter and shape of the inner electrode, temperature and positive dc bias at inner electrode) are optimized for cylindrical geometry. The etch rate non-uniformity has been overcome by simultaneous translation of the gas point-of-entry and the inner electrode during the processing. A single cell SRF cavity has been centrifugally barrel polished, chemically etched and RF tested to establish a baseline performance. This cavity is plasma etched and RF tested afterwards. The effect of plasma etching on the RF performance of this cavity will be presented and discussed.

  2. Numerical analysis of the influence of surface-active substance in the melt on the distribution of modifying particles and crystallization at the treatment of metal surface by a laser pulse

    NASA Astrophysics Data System (ADS)

    Cherepanov, A. N.; Popov, V. N.

    2014-06-01

    A mathematical model is proposed for the process of modifying the metal surface layer by refractory nano-size particles with the aid of the pulse laser radiation, which accounts for the surface tension dependence on the presence of surface-active substance in the melt. Numerical modeling has been carried out, from the results of which the influence of the surface -active admixture on the character of forming flows, distribution of particles of the modifying substance in the metal, and the melt crystallization process have been estimated.

  3. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  4. Etched-multilayer phase shifting masks for EUV lithography

    DOEpatents

    Chapman, Henry N.; Taylor, John S.

    2005-04-05

    A method is disclosed for the implementation of phase shifting masks for EUV lithography. The method involves directly etching material away from the multilayer coating of the mask, to cause a refractive phase shift in the mask. By etching into the multilayer (for example, by reactive ion etching), rather than depositing extra material on the top of the multilayer, there will be minimal absorption loss associated with the phase shift.

  5. A role of low pressure plasma discharge on etch rate of SiO2 dummy wafer

    NASA Astrophysics Data System (ADS)

    Milosavljevic, Vladimir; Zekic, Andrjana; Popovic, Dusan; Macgearailt, Niall; Daniels, Stephen

    2009-10-01

    Plasma has become indispensable for advanced materials processing, also low--k materials as SiO2 play important role in semiconductor industry. In this work a treatment of SiO2 single crystal by DC plasma discharge is studied in details. There are many effects occurred during plasma--surface interactions. Our work is focused on interaction between ions and dielectric surface. The etch rates, surface morphology and chemical composition of modified surface layer obtained by DC plasma etching are reported. Influence of plasma chemistry (SF6, O2, N2, Ar and He), discharge voltage (up to 1.2 kV), gas flow (up to 25 sccm, for each gas) and electrode--wafer geometry on etch rate of SiO2 wafer have been studied. Offline metrology is conducted for SiO2 wafer by SEM/EDAX technique and Raman scattering. Broad Raman peak at around 2800 cm-1 is observed for both, treated and original, investigated SiO2 wafers. Effects of plasma treatment conditions on integrated intensity of this peak are reported in the paper. An analysis of this correlation could be a framework for creating virtual etches rate sensors, which might be of importance in managing of plasma etching processes.

  6. Decontamination of metals using chemical etching

    DOEpatents

    Lerch, Ronald E.; Partridge, Jerry A.

    1980-01-01

    The invention relates to chemical etching process for reclaiming contaminated equipment wherein a reduction-oxidation system is included in a solution of nitric acid to contact the metal to be decontaminated and effect reduction of the reduction-oxidation system, and includes disposing a pair of electrodes in the reduced solution to permit passage of an electrical current between said electrodes and effect oxidation of the reduction-oxidation system to thereby regenerate the solution and provide decontaminated equipment that is essentially radioactive contamination-free.

  7. Capillary flow in sacrificially etched nanochannels

    PubMed Central

    Hamblin, Mark N.; Hawkins, Aaron R.; Murray, Dallin; Maynes, Daniel; Lee, Milton L.; Woolley, Adam T.; Tolley, H. Dennis

    2011-01-01

    Planar nanochannels are fabricated using sacrificial etching technology with sacrificial cores consisting of aluminum, chromium, and germanium, with heights ranging from 18 to 98 nm. Transient filling via capillary action is compared against the Washburn equation [E. W. Washburn, Phys. Rev. 17, 273 (1921)], showing experimental filling speeds significantly lower than classical continuum theory predicts. Departure from theory is expressed in terms of a varying dynamic contact angle, reaching values as high as 83° in channels with heights of 18 nm. The dynamic contact angle varies significantly from the macroscopic contact angle and increases with decreasing channel dimensions. PMID:21772934

  8. Capillary flow in sacrificially etched nanochannels.

    PubMed

    Hamblin, Mark N; Hawkins, Aaron R; Murray, Dallin; Maynes, Daniel; Lee, Milton L; Woolley, Adam T; Tolley, H Dennis

    2011-06-01

    Planar nanochannels are fabricated using sacrificial etching technology with sacrificial cores consisting of aluminum, chromium, and germanium, with heights ranging from 18 to 98 nm. Transient filling via capillary action is compared against the Washburn equation [E. W. Washburn, Phys. Rev. 17, 273 (1921)], showing experimental filling speeds significantly lower than classical continuum theory predicts. Departure from theory is expressed in terms of a varying dynamic contact angle, reaching values as high as 83° in channels with heights of 18 nm. The dynamic contact angle varies significantly from the macroscopic contact angle and increases with decreasing channel dimensions.

  9. A wet etching technique for accurate etching of GaAs/AlAs distributed Bragg reflectors

    SciTech Connect

    Bacher, K.; Harris, J.S. Jr.

    1995-07-01

    The authors have demonstrated a wet etching technique capable of producing accurate and uniform etch depths in distributed Bragg reflectors (DBRs) and other GaAs/AlAs superlattice structures. The process utilizes two selective etchants, citric acid/hydrogen peroxide in a 4:1 ratio and phosphoric acid/hydrogen peroxide/water in a 3:1:50 ratio, to sequentially etch away each pair of superlattice layers. The authors have used this technique to expose a 680 {angstrom} thick conduction GaAs layer buried beneath a 15 period, 2.1 {micro}m thick, undoped GaAs/AlAs DBR mirror. Transmission line measurements pads were formed on the exposed layer to determine the contact and sheet resistance. Comparison with a similar layer on the surface of the wafer reveals that the exposed layer is easily contacted with only a slight increase in sheet resistance indicating less than 125 {angstrom} of overetching, 0.6% of the total etch depth.

  10. Anisotropic etching of Al by a directed Cl2 flux

    NASA Technical Reports Server (NTRS)

    Efremow, N. N.; Geis, M. W.; Mountain, R. W.; Lincoln, G. A.; Randall, J. N.

    1986-01-01

    A new Al etching technique is described that uses an ion beam from a Kaufman ion source and a directed Cl2 flux. The ion beam is used primarily to remove the native oxide and to allow the Cl2 to spontaneously react with the Al film forming volatile Al2Cl6. By controlling both the flux equivalent pressure of Cl2 and the ion beam current, this etching technique makes possible the anisotropic etching of Al with etch rates from 100 nm/min to nearly 10 microns/min with a high degree of selectivity.

  11. Resonantly enhanced selective photochemical etching of GaN

    NASA Astrophysics Data System (ADS)

    Trichas, E.; Kayambaki, M.; Iliopoulos, E.; Pelekanos, N. T.; Savvidis, P. G.

    2009-04-01

    Wavelength dependent photochemical etching of GaN films reveals a strong resonant enhancement of the photocurrent at the GaN gap, in close agreement with the excitonic absorption profile of GaN. The corresponding etching rate of GaN strongly correlates with the measured photocurrent. No photocurrent, nor etching is observed for AlGaN films under same excitation conditions. The method could pave the way to the development of truly selective etching of GaN on AlGaN for the fabrication of nitride based optoelectronic devices.

  12. Fe-catalyzed etching of exfoliated graphite through carbon hydrogenation

    PubMed Central

    Cheng, Guangjun; Calizo, Irene; Hacker, Christina A.; Richter, Curt A.; Hight Walker, Angela R.

    2016-01-01

    We present an investigation on Fe-catalyzed etching of graphite by dewetting Fe thin films on graphite in forming gas. Raman mapping of the etched graphite shows thickness variation in the etched channels and reveals that the edges are predominately terminated in zigzag configuration. X-ray diffraction and photoelectron spectroscopy measurements identify that the catalytic particles are Fe with the presence of iron carbide and iron oxides. The existence of iron carbide indicates that, in additional to carbon hydrogenation, carbon dissolution into Fe is also involved during etching. Furthermore, the catalytic particles can be re-activated upon a second annealing in forming gas. PMID:27840449

  13. Influence of pH on the quantum-size-controlled photoelectrochemical etching of epitaxial InGaN quantum dots

    SciTech Connect

    Xiao, Xiaoyin; Lu, Ping; Fischer, Arthur J.; Coltrin, Michael E.; Wang, George T.; Koleske, Daniel D.; Tsao, Jeffrey Y.

    2015-11-18

    Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In2O3 and/or Ga2O3) form which interfere with quantum dot formation. Furthermore, at pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.

  14. Influence of pH on the quantum-size-controlled photoelectrochemical etching of epitaxial InGaN quantum dots

    DOE PAGES

    Xiao, Xiaoyin; Lu, Ping; Fischer, Arthur J.; ...

    2015-11-18

    Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In2O3 and/or Ga2O3) form which interfere with quantum dot formation. Furthermore, at pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.

  15. Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Chen, Lung-Chien; Lin, Wun-Wei; Liu, Te-Yu

    2017-01-01

    This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted chemical etching and photo-enhanced post-annealing at 100 °C for 1 min. As a result, the light output power of GaN-based TF-LEDs with wet etching and post-annealing was over 72% more than that of LEDs that did not undergo these treatments.

  16. Surface treatment of barium gallogermanate laser glass

    NASA Astrophysics Data System (ADS)

    Yang, Gang; Qian, Qi; Yang, Zhongmin

    2011-01-01

    The surface of barium gallogermanate glass is modified through HCl solution etching to remove the surface defects and contaminations. The etching process and mechanism for barium gallogermanate glass in hydrochloric acid are investigated, and its optimum conditions are determined. However, the HCl etching induces the insoluble etch product containing minute crystal particles on glass surface. By heating BGG glass at the optical fiber drawing temperature, the deposited surface layer turned to be amorphous again and results in the increase of the transmittance of glass. The results indicated that the HCl etching combined with subsequent high-temperature heat treatment is an effective approach to improve the surface quality of barium gallogermanate glass, which would reduce the optical loss of the final optical fiber.

  17. Comparing study of subpicosecond and nanosecond wet etching of fused silica

    NASA Astrophysics Data System (ADS)

    Vass, Cs.; Sebők, D.; Hopp, B.

    2006-04-01

    The effectiveness of the laser induced backside wet etching (LIBWE) of fused silica produced by subpicosecond (600 fs) and nanosecond (30 ns) KrF excimer laser pulses (248 nm) was studied. Fused silica plates were the transparent targets, and naphthalene-methyl-methacrylate ( c = 0.85, 1.71 M) and pyrene-acetone ( c = 0.4 M) solutions were used as liquid absorbents. We did not observe etching using 600 fs laser pulses, in contrast with the experiments at 30 ns, where etched holes were found. The threshold fluences of the LIBWE at nanosecond pulses were found to be in the range of 360-450 mJ cm -2 depending on the liquid absorbers and their concentrations. On the basis of the earlier results the LIBWE procedure can be explain by the thermal heating of the quartz target and the high-pressure bubble formation in the liquid. According to the theories, these bubbles hit and damage the fused silica surface. The pressure on the irradiated quartz can be derived from the snapshots of the originating and expanding bubbles recorded by fast photographic setup. We found that the bubble pressure at 460 mJ cm -2 fluence value was independent of the pulse duration (600 fs and 30 ns) using pyrene-acetone solution, while using naphthalene-methyl-methacrylate solutions this pressure was 4, 5 times higher at 30 ns pulses than it was at 600 fs pulses. According to the earlier studies, this result refers to that the pressure should be sufficiently high to remove a thin layer from the quartz surface using pyrene-acetone solution. These facts show that the thermal and chemical phenomena in addition to the mechanical effects also play important role in the LIBWE procedure.

  18. The wettability between etching solutions and the surface of multicrystalline silicon wafer during metal-assisted chemical etching process

    NASA Astrophysics Data System (ADS)

    Niu, Y. C.; Liu, Z.; Liu, X. J.; Gao, Y.; Lin, W. L.; Liu, H. T.; Jiang, Y. S.; Ren, X. K.

    2017-01-01

    In order to investigate the wettability of multicrystalline silicon (mc-Si) with the etching solutions during metal-assisted chemical etching process, different surface structures were fabricated on the p-type multi-wire slurry sawn mc-Si wafers, such as as-cut wafers, polished wafers, and wafers etched in different solutions. The contact angles of different etching solutions on the surfaces of the wafers were measured. It was noted that all contact angles of etching solutions were smaller than the corresponding ones of deionized water, but the contact angles of different etching solutions were quite different. Among the contact angles of the etching solutions of AgNO3-HF, H2O2-HF, TMAH and HNO3-HF, the contact angle of TMAH solution was much larger than the others and that of HNO3-HF solution was much smaller. It is suggested that the larger contact angle may lead to an unevenly etching of silicon wafer due to the long retention of big bubbles on the wafers in the etching reaction, which should be paid attention to and overcome.

  19. A review of laser applications in orthodontics.

    PubMed

    Kang, Yunlong; Rabie, A B M; Wong, R W K

    2014-01-01

    Laser technique now is widely applied in orthodontic treatment and proved to have many benefits. Soft tissue lasers can be used to perform gingivectomy, frenectomy and surgical exposure of tooth with less bleeding and swelling, improved precision, reduced pain and less wound contraction. Other laser applications include enamel etching and bonding and bracket debonding. Lower level lasers have the potential effects of pain control and accelerating tooth movement. Clinicians must be aware of the safety issues and risks associated with laser and receive proper training before the laser treatment is started.

  20. Raman mapping analysis for removal of surface secondary phases of CZTS films using chemical etching

    NASA Astrophysics Data System (ADS)

    Wei, Zhengfei; Newman, Michael J.; Tsoi, Wing C.; Watson, Trystan M.

    2016-09-01

    Raman spectroscopy has been widely used as a non-destructive surface characterization method for the Cu2ZnSnS4 (CZTS) thin films. Secondary phases, which often co-exist with CZTS, are detrimental to the device performance. In this work, removal of the secondary phases using sodium sulfide (Na2S) aqueous solution etching in various time durations was investigated. Raman scattering mapping provides a direct visualization of phase distribution in CZTS-based materials on a relatively large scale (1 mm × 10 mm). Both as-grown and etched CZTS absorber layers were examined by Raman spectroscopy with a 532 nm excitation laser light in the range of 50-500 cm-1. A clear reduction of the secondary phases (mainly SnS) at the surface after etching was confirmed by Raman spectroscopy and scanning electron microscopy. Room temperature photoluminescence (PL) reveals a pronounced correlation between the amount of secondary phases and photoluminescence peak position. The PL spectra of the regions with more Sn-rich secondary phases show clearly a shift to high wavelength of the peak position, in comparison with regions with less Sn-rich secondary phases. These observed PL changes could be due to Sn-rich defects which may cause recombination processes.

  1. Etched beam splitters in InP/InGaAsP.

    PubMed

    Norberg, Erik J; Parker, John S; Nicholes, Steven C; Kim, Byungchae; Krishnamachari, Uppiliappan; Coldren, Larry A

    2011-01-17

    An etched beam splitter (EBS) photonic coupler based on frustrated total internal reflection (FTIR) is designed, fabricated and characterized in the InP/InGaAsP material system. The EBS offers an ultra compact footprint (8x11 μm) and a complete range of bar/cross coupling ratio designs. A novel pre-etching process is developed to achieve sufficient depth of the etched coupling gaps. Fabricated EBS couplers demonstrate insertion loss between 1 and 2.6 dB with transmission (cross-coupling) ≤ 10%. The results show excellent agreement with 3D finite-difference time-domain (FDTD) modeling. The coupling of EBS has weak wavelength dependence in the C-band, making it suitable for wavelength division multiplexing (WDM) or other wide bandwidth applications. Finally, the EBS is integrated with active semiconductor optical amplifier (SOA) and phase-modulator components; using a flattened ring resonator structure, a channelizing filter tunable in both amplitude and center frequency is demonstrated, as well as an EBS coupled ring laser.

  2. A comparative study on detection of organic surface modifiers on mineral grains by TOF-SIMS, VUV SALI TOF-SIMS and VUV SALI with laser desorption

    NASA Astrophysics Data System (ADS)

    Dimov, S. S.; Chryssoulis, S. L.

    2004-06-01

    Results from a comparative study on the detection of organic collectors by TOF-SIMS, vacuum ultraviolet surface analysis by laser ionization with TOF-SIMS detection (VUV SALI TOF-SIMS) and VUV SALI with laser desorption (VUV TOF-LIMS) are reported. The study was carried out on a PHI 7200 TOF-SIMS instrument upgraded with two lasers: one for laser desorption and another one for VUV laser postionization. A systematic analysis of the laser desorption process lead to a set of optimized desorption parameters and desorption of molecules with a controlled level of fragmentation. The recorded spectra of organic collectors by VUV SALI with laser desorption are characterized by strong parent peaks and simpler fragmentation patterns, which allow for easy molecular identification. Advantages and limitations of the three techniques for analysis of organic collectors on mineral grains are discussed.

  3. Mass spectrometry analysis of etch products from CR-39 plastic irradiated by heavy ions

    NASA Astrophysics Data System (ADS)

    Kodaira, S.; Nanjo, D.; Kawashima, H.; Yasuda, N.; Konishi, T.; Kurano, M.; Kitamura, H.; Uchihori, Y.; Naka, S.; Ota, S.; Ideguchi, Y.; Hasebe, N.; Mori, Y.; Yamauchi, T.

    2012-09-01

    As a feasibility study, gas chromatography-mass spectrometry (GC-MS) and matrix-assisted laser desorption ionization-mass spectrometry (MALDI-MS) have been applied to analyze etch products of CR-39 plastic (one of the most frequently used solid states nuclear track detector) for the understanding of track formation and etching mechanisms by heavy ion irradiation. The etch products of irradiated CR-39 dissolved in sodium hydroxide solution (NaOH) contain radiation-induced fragments. For the GC-MS analysis, we found peaks of diethylene glycol (DEG) and a small but a definitive peak of ethylene glycol (EG) in the etch products from CR-39 irradiated by 60 MeV N ion beams. The etch products of unirradiated CR-39 showed a clear peak of DEG, but no other significant peaks were found. DEG is known to be released from the CR-39 molecule as a fragment by alkaline hydrolysis reaction of the polymer. We postulate that EG was formed as a result of the breaking of the ether bond (C-O-C) of the DEG part of the CR-39 polymer by the irradiation. The mass distribution of polyallylalcohol was obtained from the etch products from irradiated and unirradiated CR-39 samples by MALDI-MS analysis. Polyallylalcohol, with the repeating mass interval of m/z = 58 Da (dalton) between m/z = 800 and 3500, was expected to be produced from CR-39 by alkaline hydrolysis. We used IAA as a matrix to assist the ionization of organic analyte in MALDI-MS analysis and found that peaks from IAA covered mass spectrum in the lower m/z region making difficult to identify CR-39 fragment peaks which were also be seen in the same region. The mass spectrometry analysis using GC-MS and MALDI-MS will be powerful tools to investigate the radiation-induced polymeric fragments and helping to understand the track formation mechanism in CR-39 by heavy ions.

  4. INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Surface effects in laser diodes

    NASA Astrophysics Data System (ADS)

    Beister, G.; Maege, J.; Richter, G.

    1988-11-01

    Changes in the current-voltage characteristics below the threshold current were observed in gain-guided stripe laser diodes after preliminary lasing. This effect was not fully understood. Similar changes in the laser characteristics appeared as a result of etching in a gaseous medium. The observed changes were attributed tentatively to surface currents.

  5. Laser Cutting

    DTIC Science & Technology

    1988-06-01

    lasers that are optically modified to produce high beam quality at reduced power levels for precision drilling and trepanning. * Nd:YAG lasers with...a smooth, dross-free cut face while the marking consists of a series of precisely placed shallow pits where surface finish and dross are not usually...neodymium:yttrium-aluminum-garnet (Nd:YAG) pulsed cutting data because the technique is considered vital in meeting the detailed precision cutting

  6. Manufacturing applications of lasers; Proceedings of the Meeting, Los Angeles, CA, Jan. 23, 24, 1986

    NASA Astrophysics Data System (ADS)

    Cheo, Peter K.

    1986-01-01

    The present conference encompasses topics in laser material processing for industrial applications, laser applications in microelectronics, laser inspection and quality control, and laser diagnostics and measurements. Attention is given to the laser welding of cylinders, production laser hardfacing of jet engine turbine blades, production laser welding of gears, electric arc augmentation for laser cutting of mild steel, laser-assisted etching for microelectronics, and laser fabrication of interconnect structures on CMOS gate arrays. Also discussed are angle-scanning laser interferometry for film thickness measurements, the application of heterodyne interferometry to disk drive technology, and CARS applications to combustion diagnostics.

  7. Investigation on femtosecond laser-assisted microfabrication in silica glasses

    NASA Astrophysics Data System (ADS)

    Liu, Hewei; Chen, Feng; Yang, Qing; Si, Jinhai; Hou, Xun

    2010-11-01

    Fabrication of microstructures embedded in silica glasses using a femtosecond (fs)-laser-assisted chemical etching technique is systematically studied in this work. By scanning the laser pulses inside samples followed by the treatment of 5%-diluted hydrofluoric (HF) acid, groups of straight channels are fabricated and the relationship between the etching rate and processing parameters, including laser power, scanning speed, scanning time and laser polarization, is demonstrated. Based on the optimization of these parameters, complicated microstructures such as channels, cavities and their combinations are manufactured. The work has great potential applications in microelectromechanical systems, biomedical detection and chemical analysis.

  8. Restoration interface microleakage using one total-etch and three self-etch adhesives.

    PubMed

    Deliperi, S; Bardwell, D N; Wegley, C

    2007-01-01

    This study evaluated the efficacy of a total-etch and three self-etch adhesives in reducing microleakage after three months water storage and thermocycling. Thirty freshly extracted caries-free human premolars and molars were used. Class V standardized preparations were performed on the facial and lingual surfaces, with the gingival margin placed 1 mm below the CEJ. The teeth were randomly divided into four groups; Group I: Xeno III one-step self-etch adhesive (Dentsply/Caulk), Group II: Prime & Bond NT total-etch adhesive (Dentsply/Caulk), Group III: i-Bond one-step self-etch adhesive (Heraeus Kulzer) and Group IV: Clearfil SE Bond two-step self-etch adhesive (Kuraray Medical). The teeth were restored using 2 mm increments of shade A2 resin composite (Esthet-X, Dentsply/Caulk). Each layer was cured using the Spectrum 800 curing light (Dentsply/Caulk) for 20 seconds at 600mW/cm2. The teeth were stored in distilled water for 90 days. Samples were thermocycled 500x between 5 degrees C and 55 degrees C with a dwell time of 30 seconds, then placed in a 0.5% methylene blue dye solution for 24 hours at 37 degrees C. Samples were sectioned longitudinally and evaluated for microleakage at the occlusal and gingival margins under a stereomicroscope at 20x magnification. Dye penetration was scored: 0 = no penetration; 1 = partial dye penetration along the occlusal or gingival wall; 2 = dye penetration along the occlusal or gingival wall; 3 = dye penetration to and along the axial wall. A Mann-Whitney test was used to demonstrate significantly more dye penetration in Group III than in the other groups at both the occlusal and gingival scores (p < 0.0001). When comparing the occlusal and gingival scores for each group, the Wilcoxon Rank test showed no significant difference in dye penetration for Xeno III (p > 0.05), Prime & Bond NT (p = 0.059) and I Bond (p = 0.083), and Clearfil SE Bond yielded more dye penetration at the occlusal than at the gingival wall (p = 0.001).

  9. Metal-assisted chemical etching of silicon: a review.

    PubMed

    Huang, Zhipeng; Geyer, Nadine; Werner, Peter; de Boor, Johannes; Gösele, Ulrich

    2011-01-11

    This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching. First, the basic process and mechanism of metal-assisted chemical etching is introduced. Then, the various influences of the noble metal, the etchant, temperature, illumination, and intrinsic properties of the silicon substrate (e.g., orientation, doping type, doping level) are presented. The anisotropic and the isotropic etching behaviors of silicon under various conditions are presented. Template-based metal-assisted chemical etching methods are introduced, including templates based on nanosphere lithography, anodic aluminum oxide masks, interference lithography, and block-copolymer masks. The metal-assisted chemical etching of other semiconductors is also introduced. A brief introduction to the application of Si nanostructures obtained by metal-assisted chemical etching is given, demonstrating the promising potential applications of metal-assisted chemical etching. Finally, some open questions in the understanding of metal-assisted chemical etching are compiled.

  10. Orthodox etching of HVPE-grown GaN

    SciTech Connect

    Weyher, J.L.; Lazar, S.; Macht, L.; Liliental-Weber, Z.; Molnar,R.J.; Muller, S.; Nowak, G.; Grzegory, I.

    2006-08-10

    Orthodox etching of HVPE-grown GaN in molten eutectic of KOH + NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are formed by the preferential E etching at the outcrops of threading dislocations on the Ga-polar surface of GaN. Using transmission electron microscopy (TEM) as the calibration tool it is shown that the largest pits are formed on screw, intermediate on mixed and the smallest on edge dislocations. This sequence of size does not follow the sequence of the Burgers values (and thus the magnitude of the elastic energy) of corresponding dislocations. This discrepancy is explained taking into account the effect of decoration of dislocations, the degree of which is expected to be different depending on the lattice deformation around the dislocations, i.e. on the edge component of the Burgers vector. It is argued that the large scatter of optimal etching temperatures required for revealing all three types of dislocations in HVPE-grown samples from different sources also depends upon the energetic status of dislocations. The role of kinetics for reliability of etching in both etches is discussed and the way of optimization of the etching parameters is shown.

  11. Evaluation of bond strength of orthodontic brackets without enamel etching

    PubMed Central

    Boruziniat, Alireza; Motaghi, Shiva; Moghaddas, Mohmmadjavad

    2015-01-01

    Background To compare the shear bond strength of brackets with and without enamel etching. Material and Methods In this study, 60 sound premolars were randomly divided into four different groups: 1- TXE group: Enamel etching+Transbond XT adhesive+ Transbond XT composite. 2- TXS group: Transbond plus self-etch adhesive+ Transbond XT composite. 3- PQ1E group: Enamel etching+ PQ1 adhesive+ Transbond XT composite. 4- PQ1 group: PQ1 adhesive+ Transbond XT composite. The shear bond strengths of brackets were evaluated using universal testing machine at cross head speed of 0.5 mm/min. The Adhesive Remnant Index (ARI) was also measured. One-way ANOVA, Tukey’s post hoc, Kruskal-wallis and Mann-Witney U test were used for data analysis. Results There was a significant difference between etched and unetched groups respect to SBS and ARI (p<0.05), however; no significant difference was observed between unetched group and self-etch adhesive group (p>> 0.05). The shear bond strength of PQ1 group was the least but in acceptable range and its ARI was less than other groups. Conclusions PQ1 adhesive can be used for bracket bonding without enamel etching with adequate bond strength and minimal ARI. Key words:Bracket, shear bond strength, filled-adhesive, self-etch adhesive. PMID:26535100

  12. Sputtered gold mask for deep chemical etching of silicon

    NASA Technical Reports Server (NTRS)

    Pisciotta, B. P.; Gross, C.; Olive, R. S.

    1975-01-01

    Sputtered mask resists chemical attack from acid and has adherence to withstand prolonged submergence in etch solution without lifting from silicon surface. Even under prolonged etch conditions with significant undercutting, gold mask maintained excellent adhesion to silicon surface and imperviousness to acid.

  13. Reactive ion etching of quartz and Pyrex for microelectronic applications

    NASA Astrophysics Data System (ADS)

    Zeze, D. A.; Forrest, R. D.; Carey, J. D.; Cox, D. C.; Robertson, I. D.; Weiss, B. L.; Silva, S. R. P.

    2002-10-01

    The reactive ion etching of quartz and Pyrex substrates was carried out using CF4/Ar and CF4/O2 gas mixtures in a combined radio frequency (rf)/microwave (μw) plasma. It was observed that the etch rate and the surface morphology of the etched regions depended on the gas mixture (CF4/Ar or CF4/O2), the relative concentration of CF4 in the gas mixture, the rf power (and the associated self-induced bias) and microwave power. An etch rate of 95 nm/min for quartz was achieved. For samples covered with a thin metal layer, ex situ high resolution scanning electron microscopy and atomic force microscopy imaging indicated that, during etching, surface roughness is produced on the surface beneath the thin metallic mask. Near vertical sidewalls with a taper angle greater than 80° and smooth etched surfaces at the nanometric scale were fabricated by carefully controlling the etching parameters and the masking technique. A simulation of the electrostatic field distribution was carried out to understand the etching process using these masks for the fabrication of high definition features.

  14. Bonding performance of universal adhesives to er,cr:YSGG laser-irradiated enamel.

    PubMed

    Ayar, Muhammet Kerim; Erdemir, Fatih

    2016-11-23

    Universal adhesives have been recently introduced for use as self-etch or etch-and-rinse adhesives depending on the dental substrate and clinical condition. However, their bonding effectiveness to laser-irradiated enamel is still not well-known. Thus, the aim of this study was to compare the shear bond strength (SBS) of universal adhesives (Single Bond Universal; Nova Compo-B Plus) applied to Er,Cr:YSGG laser-irradiated enamel with SBS of the same adhesives applied in self-etch and acid-etching modes, respectively. Crown segments of sixty bovine incisors were embedded into standardized acrylic blocks. Flattened enamel surfaces were prepared. Specimens were divided into six groups according to universal adhesives and application modes randomly (n = 10), as follows: Single Bond Universal/acid-etching mode; Nova Compo-B Plus/acid-etching mode; Single Bond Universal/self-etching mode; Nova Compo-B Plus/self-etching mode; and Single Bond Universal/Er,Cr:YSGG Laser-etching mode; Nova Compo-B Plus/Er,Cr:YSGG Laser-etching mode. After surface treatments, universal adhesives were applied onto surfaces. SBS was determined after storage in water for 24 h using a universal testing machine with a crosshead speed of 0.5 mm min(-1) . Failure modes were evaluated using a stereomicroscope. Data was analyzed using two-way of analyses of variances (ANOVA) (p = 0.05). Two-way ANOVA revealed that adhesive had no effect on SBS (p = 0.88), but application mode significantly influenced SBS (p = 0.00). Acid-etching significantly increased SBS, whereas there are no significant differences between self-etch mode and laser-etching for both adhesives. The bond strength of universal adhesives may depend on application mode. Acid etching may significantly increase bond strength, while laser etching may provide similar bond strength when compared to self-etch mode.

  15. Composition/bandgap selective dry photochemical etching of semiconductor materials

    DOEpatents

    Ashby, C.I.H.; Dishman, J.L.

    1985-10-11

    Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  16. Composition/bandgap selective dry photochemical etching of semiconductor materials

    DOEpatents

    Ashby, Carol I. H.; Dishman, James L.

    1987-01-01

    A method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg.sub.1 in the presence of a second semiconductor material of a different composition and direct bandgap Eg.sub.2, wherein Eg.sub.2 >Eg.sub.1, said second semiconductor material substantially not being etched during said method, comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg.sub.1 but less than Eg.sub.2, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  17. Consideration of VT5 etch-based OPC modeling

    NASA Astrophysics Data System (ADS)

    Lim, ChinTeong; Temchenko, Vlad; Kaiser, Dieter; Meusel, Ingo; Schmidt, Sebastian; Schneider, Jens; Niehoff, Martin

    2008-03-01

    Including etch-based empirical data during OPC model calibration is a desired yet controversial decision for OPC modeling, especially for process with a large litho to etch biasing. While many OPC software tools are capable of providing this functionality nowadays; yet few were implemented in manufacturing due to various risks considerations such as compromises in resist and optical effects prediction, etch model accuracy or even runtime concern. Conventional method of applying rule-based alongside resist model is popular but requires a lot of lengthy code generation to provide a leaner OPC input. This work discusses risk factors and their considerations, together with introduction of techniques used within Mentor Calibre VT5 etch-based modeling at sub 90nm technology node. Various strategies are discussed with the aim of better handling of large etch bias offset without adding complexity into final OPC package. Finally, results were presented to assess the advantages and limitations of the final method chosen.

  18. Silicon nanowire photodetectors made by metal-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Xu, Ying; Ni, Chuan; Sarangan, Andrew

    2016-09-01

    Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface. These nanowires were produced by a wet-chemical etching process known as the metal-assisted-chemical etching, abbreviated as MACE. N-type silicon substrates were doped by thermal diffusion from a solid ceramic source, followed by etching, patterning and contact metallization. The detectors were first tested for functionality and optical performance. The nanowires were then made by depositing an ultra-thin film of gold below its percolation thickness to produce an interconnected porous film. This was then used as a template to etch high aspect ratio nanowires into the face of the detectors with a HF:H2O2 mixture.

  19. Controlling etch properties of silicon-based antireflective spin-on hardmask materials

    NASA Astrophysics Data System (ADS)

    Kim, Sang Kyun; Cho, Hyeon Mo; Woo, Changsoo; Koh, Sang Ran; Kim, Mi-Young; Yoon, Hui Chan; Lee, Woojin; Shin, Seung-Wook; Kim, Jong Seob; Chang, Tuwon

    2009-03-01

    In the recent semiconductor mass production, the tri-layer hardmask system has become crucial for successful patterning in many applications. Silicon-based anti-reflective spin-on hardmask (Si-SOH), which can be built by spin-on coating, is desirable in terms of mass production throughput and the overall cost of ownership. As the pattern size shrinks, the thickness of photoresist also becomes thinner, which forces the thickness of Si-SOH to be thinner resulting in a tighter thickness margin. In this case, controlling optical properties of Si-SOH becomes important in order to achieve low reflectivity in the exposure process. In addition, the tri-layer system can be set up more easily when the etch properties of Si-SOH can be controlled. Previously, we reported papers on silicon-based anti-reflective spin-on hardmask materials for 193 nm lithography, immersion ArF lithography, and optimization of optical properties of Si-SOH. In this paper, the technique for controlling etch properties of Si-SOH by a different type of monomer is described. To control etch properties in the same resin platform, the synthesis method was modified. Characterization of the Si-SOH synthesized by the new technique and the lithographic performance using this material are described in detail.

  20. Manganese-tuned chemical etching of a platinum-copper nanocatalyst with platinum-rich surfaces

    NASA Astrophysics Data System (ADS)

    Huang, Y. Y.; Zhao, T. S.; Zhao, G.; Yan, X. H.; Xu, K.

    2016-02-01

    This work presents a modified chemical etching strategy to fabricate binary metal nanocatalysts with large active areas. The strategy employs PtCu alloy particles with Pt-rich outer layers as the precursor and manganese species to manipulate the acid leaching processes. X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy techniques are used to analyze the catalyst structures and the tuning mechanism of manganese species during etching. It is found that the introduction of manganese species allows more Pt active sites to be formed onto the catalyst surface after etching, possibly due to reduction in the number of Pt atoms enclosed inside particles. The electrochemically active surface area of the synthetic MnA-PtCu/C catalyst increases by 90% relative to commercial Pt/C catalyst. As a result of the increase in active areas and the additional promotion effects by Cu, the MnA-PtCu/C catalyst reveals a methanol oxidation activity 1.7 and 4.0 times higher than that of the synthetic PtCu/C and commercial Pt/C catalysts, respectively.

  1. In-situ diagnostics and characterization of etch by-product deposition on chamber walls during halogen etching of silicon

    NASA Astrophysics Data System (ADS)

    Rastgar, Neema; Sriraman, Saravanapriyan; Marsh, Ricky; Paterson, Alex

    2014-10-01

    Plasma etching is a critical technology for nanoelectronics fabrication, but the use of a vacuum chamber limits the number of in-situ, real-time diagnostics measurements that can be performed during an etch process. Byproduct deposition on chamber walls during etching can affect the run-to-run performance of an etch process if there is build-up or change of wall characteristics with time. Knowledge of chamber wall evolution and the composition of wall-deposited films are critical to understanding the performance of plasma etch processes, and an in-situ diagnostics measurement is useful for monitoring the chamber walls in real time. We report the use of attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) to perform in-situ diagnostics of a vacuum chamber's walls during plasma etching. Using ATR-FTIR, we are able to monitor the relative thickness and makeup of chamber wall deposits in real time. We then use this information to develop a chamber wall cleaning process in order to maintain reproducible etching conditions from wafer to wafer. In particular, we report mid-IR (4000-650 cm-1) absorption spectra of chamber wall-deposited silicon byproducts formed during halogen etching of silicon wafers.

  2. Effects of Etch-and-Rinse and Self-etch Adhesives on Dentin MMP-2 and MMP-9

    PubMed Central

    Mazzoni, A.; Scaffa, P.; Carrilho, M.; Tjäderhane, L.; Di Lenarda, R.; Polimeni, A.; Tezvergil-Mutluay, A.; Tay, F.R.; Pashley, D.H.; Breschi, L.

    2013-01-01

    Auto-degradation of collagen matrices occurs within hybrid layers created by contemporary dentin bonding systems, by the slow action of host-derived matrix metalloproteinases (MMPs). This study tested the null hypothesis that there are no differences in the activities of MMP-2 and -9 after treatment with different etch-and-rinse or self-etch adhesives. Tested adhesives were: Adper Scotchbond 1XT (3M ESPE), PQ1 (Ultradent), Peak LC (Ultradent), Optibond Solo Plus (Kerr), Prime&Bond NT (Dentsply) (all 2-step etch-and-rinse adhesives), and Adper Easy Bond (3M ESPE), Tri-S (Kuraray), and Xeno-V (Dentsply) (1-step self-etch adhesives). MMP-2 and -9 activities were quantified in adhesive-treated dentin powder by means of an activity assay and gelatin zymography. MMP-2 and MMP-9 activities were found after treatment with all of the simplified etch-and-rinse and self-etch adhesives; however, the activation was adhesive-dependent. It is concluded that all two-step etch-and-rinse and the one-step self-etch adhesives tested can activate endogenous MMP-2 and MMP-9 in human dentin. These results support the role of endogenous MMPs in the degradation of hybrid layers created by these adhesives. PMID:23128110

  3. Bonding with self-etching primers--pumice or pre-etch? An in vitro study.

    PubMed

    Fitzgerald, Ian; Bradley, Gerard T; Bosio, Jose A; Hefti, Arthur F; Berzins, David W

    2012-04-01

    The purpose of this study was to compare the shear bond strengths (SBSs) of orthodontic brackets bonded with self-etching primer (SEP) using different enamel surface preparations. A two-by-two factorial study design was used. Sixty human premolars were harvested, cleaned, and randomly assigned to four groups (n = 15 per group). Teeth were bathed in saliva for 48 hours to form a pellicle. Treatments were assigned as follows: group 1 was pumiced for 10 seconds and pre-etched for 5 seconds with 37 per cent phosphoric acid before bonding with SEP (Transbond Plus). Group 2 was pumiced for 10 seconds before bonding. Group 3 was pre-etched for 5 seconds before bonding. Group 4 had no mechanical or chemical preparation before bonding. All teeth were stored in distilled water for 24 hours at 37°C before debonding. The SBS values and adhesive remnant index (ARI) score were recorded. The SBS values (± 1 SD) for groups 1-4 were 22.9 ± 6.6, 16.1 ± 7.3, 36.2 ± 8.2, and 13.1 ± 10.1 MPa, respectively. Two-way analysis of variance and subsequent contrasts showed statistically significant differences among treatment groups. ARI scores indicated the majority of adhesive remained on the bracket for all four groups. Pre-etching the bonding surface for 5 seconds with 37 per cent phosphoric acid, instead of pumicing, when using SEPs to bond orthodontic brackets, resulted in greater SBSs.

  4. Advanced Mitigation Process (AMP) for Improving Laser Damage Threshold of Fused Silica Optics

    NASA Astrophysics Data System (ADS)

    Ye, Xin; Huang, Jin; Liu, Hongjie; Geng, Feng; Sun, Laixi; Jiang, Xiaodong; Wu, Weidong; Qiao, Liang; Zu, Xiaotao; Zheng, Wanguo

    2016-08-01

    The laser damage precursors in subsurface of fused silica (e.g. photosensitive impurities, scratches and redeposited silica compounds) were mitigated by mineral acid leaching and HF etching with multi-frequency ultrasonic agitation, respectively. The comparison of scratches morphology after static etching and high-frequency ultrasonic agitation etching was devoted in our case. And comparison of laser induce damage resistance of scratched and non-scratched fused silica surfaces after HF etching with high-frequency ultrasonic agitation were also investigated in this study. The global laser induce damage resistance was increased significantly after the laser damage precursors were mitigated in this case. The redeposition of reaction produce was avoided by involving multi-frequency ultrasonic and chemical leaching process. These methods made the increase of laser damage threshold more stable. In addition, there is no scratch related damage initiations found on the samples which were treated by Advanced Mitigation Process.

  5. Advanced Mitigation Process (AMP) for Improving Laser Damage Threshold of Fused Silica Optics

    PubMed Central

    Ye, Xin; Huang, Jin; Liu, Hongjie; Geng, Feng; Sun, Laixi; Jiang, Xiaodong; Wu, Weidong; Qiao, Liang; Zu, Xiaotao; Zheng, Wanguo

    2016-01-01

    The laser damage precursors in subsurface of fused silica (e.g. photosensitive impurities, scratches and redeposited silica compounds) were mitigated by mineral acid leaching and HF etching with multi-frequency ultrasonic agitation, respectively. The comparison of scratches morphology after static etching and high-frequency ultrasonic agitation etching was devoted in our case. And comparison of laser induce damage resistance of scratched and non-scratched fused silica surfaces after HF etching with high-frequency ultrasonic agitation were also investigated in this study. The global laser induce damage resistance was increased significantly after the laser damage precursors were mitigated in this case. The redeposition of reaction produce was avoided by involving multi-frequency ultrasonic and chemical leaching process. These methods made the increase of laser damage threshold more stable. In addition, there is no scratch related damage initiations found on the samples which were treated by Advanced Mitigation Process. PMID:27484188

  6. Optimized condition for etching fused-silica phase gratings with inductively coupled plasma technology.

    PubMed

    Wang, Shunquan; Zhou, Changhe; Ru, Huayi; Zhang, Yanyan

    2005-07-20

    Polymer deposition is a serious problem associated with the etching of fused silica by use of inductively coupled plasma (ICP) technology, and it usually prevents further etching. We report an optimized etching condition under which no polymer deposition will occur for etching fused silica with ICP technology. Under the optimized etching condition, surfaces of the fabricated fused silica gratings are smooth and clean. Etch rate of fused silica is relatively high, and it demonstrates a linear relation between etched depth and working time. Results of the diffraction of gratings fabricated under the optimized etching condition match theoretical results well.

  7. Characterization of silicon isotropic etch by inductively coupled plasma etcher for microneedle array fabrication

    NASA Astrophysics Data System (ADS)

    Ji, Jing; Tay, Francis E. H.; Miao, Jianmin; Sun, Jianbo

    2006-04-01

    This work investigates the isotropic etching properties in inductively coupled plasma (ICP) etcher for microneedle arrays fabrication. The effects of process variables including powers, gas and pressure on needle structure generation are characterized by factorial design of experiment (DOE). The experimental responses of vertical etching depth, lateral etching length, ratio of vertical etching depth to lateral etching length and photoresist etching rate are reported. The relevance of the etching variables is also presented. The obtained etching behaviours for microneedle structure generation will be applied to develop recipes to fabricate microneedles in designed dimensions.

  8. Hydrothermal Etching Treatment to Rutile TiO2 Nanorod Arrays for Improving the Efficiency of CdS-Sensitized TiO2 Solar Cells

    NASA Astrophysics Data System (ADS)

    Wan, Jingshu; Liu, Rong; Tong, Yuzhu; Chen, Shuhuang; Hu, Yunxia; Wang, Baoyuan; Xu, Yang; Wang, Hao

    2016-01-01

    Highly ordered TiO2 nanorod arrays (NRAs) were directly grown on an F:SnO2 (FTO) substrate without any seed layer by hydrothermal route. For a larger surface area, the second-step hydrothermal treatment in hydrochloric acid was carried out to the as-prepared TiO2 NRAs. The results showed that the center portion of the TiO2 nanorods were dissolved in the etching solution to form a nanocave at the initial etching process. As the etching time extended, the tip parts of the nanocave wall split into lots of nanowires with a reduced diameter, giving rise to a remarkable increase of specific surface area for the TiO2 NRAs. The TiO2 films after etching treatment were sensitized by CdS quantum dots (QDs) to fabricate quantum dot-sensitized solar cells (QDSSCs), which exhibited a significant improvement in the photocurrent density in comparison with that of the un-treated device, this mainly attributed to the enhancement of QD loading and diffused reflectance ability. Through modifying the etching TiO2 films with TiCl4, a relatively high power conversion efficiency (PCE) of 3.14 % was obtained after optimizing the etching time.

  9. Hydrothermal Etching Treatment to Rutile TiO2 Nanorod Arrays for Improving the Efficiency of CdS-Sensitized TiO2 Solar Cells.

    PubMed

    Wan, Jingshu; Liu, Rong; Tong, Yuzhu; Chen, Shuhuang; Hu, Yunxia; Wang, Baoyuan; Xu, Yang; Wang, Hao

    2016-12-01

    Highly ordered TiO2 nanorod arrays (NRAs) were directly grown on an F:SnO2 (FTO) substrate without any seed layer by hydrothermal route. For a larger surface area, the second-step hydrothermal treatment in hydrochloric acid was carried out to the as-prepared TiO2 NRAs. The results showed that the center portion of the TiO2 nanorods were dissolved in the etching solution to form a nanocave at the initial etching process. As the etching time extended, the tip parts of the nanocave wall split into lots of nanowires with a reduced diameter, giving rise to a remarkable increase of specific surface area for the TiO2 NRAs. The TiO2 films after etching treatment were sensitized by CdS quantum dots (QDs) to fabricate quantum dot-sensitized solar cells (QDSSCs), which exhibited a significant improvement in the photocurrent density in comparison with that of the un-treated device, this mainly attributed to the enhancement of QD loading and diffused reflectance ability. Through modifying the etching TiO2 films with TiCl4, a relatively high power conversion efficiency (PCE) of 3.14 % was obtained after optimizing the etching time.

  10. Algorithms for finely adjusting etch depths to improve the diffraction efficiency uniformity of large-aperture BSG

    NASA Astrophysics Data System (ADS)

    Wu, Lixiang; Qiu, Keqiang; Liu, Ying; Fu, Shaojun

    2015-03-01

    Beam sampling gratings (BSGs) employed in high-power laser systems usually have large aperture so that the adequate uniformity of diffraction efficiency is difficult to obtain. We proposed a deterministic method using controllable non-uniform etch to improve the efficiency uniformity of large-aperture BSGs. During the ion beam etching (IBE) process, etch depths are finely adjusted by the dynamic leaf. The motion trajectory of the dynamic leaf is calculated using the fine adjustment algorithm. Simulations are conducted on the basis of a typical example. The simulation predictions show that the cumulative error is 0.067 nm and about 99.1% of depth differences are in the range of the required etch depth tolerance, which suggests that the diffraction efficiency uniformity of BSG is expected to be effectively improved and thus can meet the requirement of a RMS of 5%. As a cost-effective solution, it also has a broad prospect in many optical fabrication fields, especially for the fabrication of large optics.

  11. Microhardness, chemical etching, SEM, AFM and SHG studies of novel nonlinear optical crystal -L-threonine formate

    SciTech Connect

    Hanumantha Rao, Redrothu; Kalainathan, S.

    2012-04-15

    Highlights: Black-Right-Pointing-Pointer Microhardness studies of novel LTF crystal reported first time in the literature. Black-Right-Pointing-Pointer Surface studies are done by AFM, chemical etching and SEM. Black-Right-Pointing-Pointer From SHG studies, it is known that LTF is potential NLO crystal. -- Abstract: The crystal L-threonine formate, an organic NLO crystal was synthesized from aqueous solution by slow evaporation technique. The grown crystal surface has been analyzed by scanning electron microscopy (SEM), chemical etching and atomic force microscopy (AFM). SEM analysis reveals pyramidal shaped minute crystallites on the growth surface. The etching study indicates the occurrence of etch pit patterns like striations and step like pattern. The mechanical properties of LTF crystals were evaluated by mechanical testing which reveals certain mechanical characteristics like elastic stiffness constant (C{sub 11}) and young's modulus (E). The Vickers and Knoop microhardness studies have been carried out on LTF crystals over a range of 10-50 g. Hardness anisotropy has been observed in accordance with the orientation of the crystal. AFM image shows major hillock on growth surface. The second harmonic generation (SHG) efficiency has been tested by the Kurtz powder technique using Nd:YAG laser and found to be about 1.21 times in comparison with standard potassium dihydrogen phosphate (KDP) crystals.

  12. Nondestructive assessment of current one-step self-etch dental adhesives using optical coherence tomography.

    PubMed

    Bista, Baba; Sadr, Alireza; Nazari, Amir; Shimada, Yasushi; Sumi, Yasunori; Tagami, Junji

    2013-07-01

    ABSTRACT. This study aimed to nondestructively evaluate sealing performance of eight one-step self-etch adhesives (1-SEAs) using optical coherence tomography (OCT). The two-step self-etch adhesive (2-SEA) served as the control. Round tapered class-I cavities (D=4 mm, H=2 mm) were prepared in bovine incisors, treated with each adhesive (n=5), and restored with a flowable resin composite. Cross-sections were obtained from each restoration using swept-source OCT with 1310-nm laser. The average percentage of the sealed interface (SI%) for each adhesive was calculated using image analysis software, considering increased signal intensity at the interface as gap. Samples were then sectioned and observed under confocal laser scanning microscope (CLSM). Significantly different SI% values were found among different adhesives (analysis of variance, Bonferroni, p<0.05). There was also a significant correlation in SI% between OCT and CLSM (p<0.0001, r=0.96). Additionally, microscopic analysis revealed that the gaps in 1-SEAs occurred not only at dentine-adhesive interfaces but also frequently at adhesive-composite interfaces. Some recent 1-SEAs could achieve reliable short-term sealing comparable to 2-SEA. OCT is a unique tool to nondestructively evaluate the sealing performance of the restoratives through the cavity, provided that cavity walls have a certain minimum inclination with respect to the beam.

  13. Fabrication of Efficient, Large Aperture Transmission Diffraction Gratings by Ion-Beam Etching

    SciTech Connect

    Nguyen, H T; Bryan, S R; Britten, J A; Perry, M D

    2000-09-14

    The utilization of high-power short pulse laser employing chirped-pulse amplification (CPA) for material processing and inertial confinement research is widely increasing. The performance of these high-power CPA laser system continues to be limited by the ability of the pulse compression gratings to hold up to the high-average-power or high-peak-power of the laser. Pulse compression gratings used in transmission and fabricated out of bulk fused silica have intrinsically the highest laser damage threshold when compared with metal or multilayer dielectric gratings that work in reflection. LLNL has developed processing capability to produce high efficiency fused silica transmission gratings at sizes useful to future Petawatt-class systems, and has demonstrated high efficiency at smaller aperture. This report shows that fused silica diffraction exhibiting >95% efficiency into the -1 diffraction order in transmission (90{sup o} deflection of the incident light, at an incidence angle of 45{sup o} to the grating face). The microstructure of this grating consisted of grooves ion-beam etched to a depth of 1.6 microns with a pitch of 0.75 microns, using a holographically produced photoresist mask that was subsequently stripped away in significance to the fabrication of the small scale high efficiency grating was the development of the processing technology and infrastructure for production of such gratings at up to 65 cm diameter. LLNL is the currently the only location in the world with the ability to coat, interferometrically expose, and ion etch diffractive optics at this aperture. Below, we describe the design, fabrication, performance and, the scaleup process for a producing a high-efficiency transmission grating on a 65 cm fused silica substrate.

  14. Formation of nanostructured silicon surfaces by stain etching.

    PubMed

    Ayat, Maha; Belhousse, Samia; Boarino, Luca; Gabouze, Noureddine; Boukherroub, Rabah; Kechouane, Mohamed

    2014-01-01

    In this work, we report the fabrication of ordered silicon structures by chemical etching of silicon in vanadium oxide (V2O5)/hydrofluoric acid (HF) solution. The effects of the different etching parameters including the solution concentration, temperature, and the presence of metal catalyst film deposition (Pd) on the morphologies and reflective properties of the etched Si surfaces were studied. Scanning electron microscopy (SEM) was carried out to explore the morphologies of the etched surfaces with and without the presence of catalyst. In this case, the attack on the surfaces with a palladium deposit begins by creating uniform circular pores on silicon in which we distinguish the formation of pyramidal structures of silicon. Fourier transform infrared spectroscopy (FTIR) demonstrates that the surfaces are H-terminated. A UV-Vis-NIR spectrophotometer was used to study the reflectance of the structures obtained. A reflectance of 2.21% from the etched Si surfaces in the wavelength range of 400 to 1,000 nm was obtained after 120 min of etching while it is of 4.33% from the Pd/Si surfaces etched for 15 min.

  15. Formation of nanostructured silicon surfaces by stain etching

    PubMed Central

    2014-01-01

    In this work, we report the fabrication of ordered silicon structures by chemical etching of silicon in vanadium oxide (V2O5)/hydrofluoric acid (HF) solution. The effects of the different etching parameters including the solution concentration, temperature, and the presence of metal catalyst film deposition (Pd) on the morphologies and reflective properties of the etched Si surfaces were studied. Scanning electron microscopy (SEM) was carried out to explore the morphologies of the etched surfaces with and without the presence of catalyst. In this case, the attack on the surfaces with a palladium deposit begins by creating uniform circular pores on silicon in which we distinguish the formation of pyramidal structures of silicon. Fourier transform infrared spectroscopy (FTIR) demonstrates that the surfaces are H-terminated. A UV-Vis-NIR spectrophotometer was used to study the reflectance of the structures obtained. A reflectance of 2.21% from the etched Si surfaces in the wavelength range of 400 to 1,000 nm was obtained after 120 min of etching while it is of 4.33% from the Pd/Si surfaces etched for 15 min. PMID:25435830

  16. Photoelectrochemical etching of gallium nitride surface by complexation dissolution mechanism

    NASA Astrophysics Data System (ADS)

    Zhang, Miao-Rong; Hou, Fei; Wang, Zu-Gang; Zhang, Shao-Hui; Pan, Ge-Bo

    2017-07-01

    Gallium nitride (GaN) surface was etched by 0.3 M ethylenediamine tetraacetic acid disodium (EDTA-2Na) via photoelectrochemical etching technique. SEM images reveal the etched GaN surface becomes rough and irregular. The pore density is up to 1.9 × 109 per square centimeter after simple acid post-treatment. The difference of XPS spectra of Ga 3d, N 1s and O 1s between the non-etched and freshly etched GaN surfaces can be attributed to the formation of Ga-EDTA complex at the etching interface between GaN and EDTA-2Na. The proposed complexation dissolution mechanism can be broadly applicable to almost all neutral etchants under the prerequisite of strong light and electric field. From the point of view of environment, safety and energy, EDTA-2Na has obvious advantages over conventionally corrosive etchants. Moreover, as the further and deeper study of such nearly neutral etchants, GaN etching technology has better application prospect in photoelectric micro-device fabrication.

  17. Layer by layer etching of LaAlSiOx

    NASA Astrophysics Data System (ADS)

    Hayashi, Hisataka

    2016-09-01

    In order to fabricate a gate transistor with high-k oxide materials, removal of high-k oxide films after gate electrode etching is necessary for the formation of ohmic contacts on source and drain regions. It is crucial that the removal process of high-k oxide film by dry etching is highly selective to and low in damage to the Si substrate in order to avoid the degradation of device performances. Sasaki et al. have achieved a high LaAlSiOx-to-Si selectivity of 6.7 using C4F8/Ar/H2 plasma. In the LaAlSiOx etching process using C4F8/Ar/H2 plasma, H2 plays a role in breaking the metal-oxygen bond to enhance etching of LaAlSiOx. Based on this result, the process was decomposed into two steps: a surface modification step using H2 plasma to break the metal-oxygen bond, and a removal step using C4F8/Ar plasma. A sequential layer by layer etching could realize low damage etching, similar to atomic layer etching. Therefore, a sequential LaAlSiOx etching process using a H2 surface modification step followed by a removal step using C4F8/Ar plasma is investigated. Experiments were carried out on 300 mm diameter wafers using the 100/13.56 MHz dual frequency superimposed capacitively coupled plasma reactor. The etching gases were H2 and C4F8/Ar for each step, respectively. Plasma process conditions were 100 MHz power of 1000 W (plasma generation), 13.56MHz power varied from 0 W to 300W (ion energy control). The substrate temperature was 40 °C. 15nm thick LaAlSiOx blanket film was used for evaluation of the etched amount. Film thickness was measured by X-ray fluorescent analysis thickness meter before and after plasma exposure. The etched amount of LaAlSiOx by the C4F8/Ar plasma step doubled with H2 modification. It is confirmed that when the C4F8/Ar plasma treatment time is sufficient to remove the surface modification layer, a self-limiting reaction is realized. Furthermore, it is confirmed that the etched amount per step can be controlled by control of the ion energy of H2

  18. Parametric study on the solderability of etched PWB copper

    SciTech Connect

    Hosking, F.M.; Stevenson, J.O.; Hernandez, C.L.

    1996-10-01

    The rapid advancement of interconnect technology has resulted in a more engineered approach to designing and fabricating printed wiring board (PWB) surface features. Recent research at Sandia National Laboratories has demonstrated the importance of surface roughness on solder flow. This paper describes how chemical etching was used to enhance the solderability of surfaces that were normally difficult to wet. The effects of circuit geometry, etch concentration, and etching time on solder flow are discussed. Surface roughness and solder flow data are presented. The results clearly demonstrate the importance of surface roughness on the solderability of fine PWB surface mount features.

  19. Selectively-etched nanochannel electrophoretic and electrochemical devices

    DOEpatents

    Surh, Michael P.; Wilson, William D.; Barbee, Jr., Troy W.; Lane, Stephen M.

    2004-11-16

    Nanochannel electrophoretic and electrochemical devices having selectively-etched nanolaminates located in the fluid transport channel. The normally flat surfaces of the nanolaminate having exposed conductive (metal) stripes are selectively-etched to form trenches and baffles. The modifications of the prior utilized flat exposed surfaces increase the amount of exposed metal to facilitate electrochemical redox reaction or control the exposure of the metal surfaces to analytes of large size. These etched areas variously increase the sensitivity of electrochemical detection devices to low concentrations of analyte, improve the plug flow characteristic of the channel, and allow additional discrimination of the colloidal particles during cyclic voltammetry.

  20. Selectively-etched nanochannel electrophoretic and electrochemical devices

    DOEpatents

    Surh, Michael P.; Wilson, William D.; Barbee, Jr., Troy W.; Lane, Stephen M.

    2006-06-27

    Nanochannel electrophoretic and electrochemical devices having selectively-etched nanolaminates located in the fluid transport channel. The normally flat surfaces of the nanolaminate having exposed conductive (metal) stripes are selectively-etched to form trenches and baffles. The modifications of the prior utilized flat exposed surfaces increase the amount of exposed metal to facilitate electrochemical redox reaction or control the exposure of the metal surfaces to analytes of large size. These etched areas variously increase the sensitivity of electrochemical detection devices to low concentrations of analyte, improve the plug flow characteristic of the channel, and allow additional discrimination of the colloidal particles during cyclic voltammetry.

  1. Structural and magnetic etch damage in CoFeB

    SciTech Connect

    Krayer, L.; Lau, J. W.; Kirby, B. J.

    2014-05-07

    A detailed understanding of the interfacial properties of thin films used in magnetic media is critical for the aggressive component scaling required for continued improvement in storage density. In particular, it is important to understand how common etching and milling processes affect the interfacial magnetism. We have used polarized neutron reflectometry and transmission electron microscopy to characterize the structural and magnetic properties of an ion beam etched interface of a CoFeB film. We found that the etching process results in a sharp magnetic interface buried under a nanometer scale layer of non-magnetic, compositionally distinct material.

  2. Metal-assisted chemical etch porous silicon formation method

    DOEpatents

    Li, Xiuling; Bohn, Paul W.; Sweedler, Jonathan V.

    2004-09-14

    A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

  3. Resistless lithography - selective etching of silicon with gallium doping regions

    NASA Astrophysics Data System (ADS)

    Abdullaev, D.; Milovanov, R.; Zubov, D.

    2016-12-01

    This paper presents the results for used of resistless lithography with a further reactive-ion etching (RIE) in various chemistry after local (Ga+) implantation of silicon with different doping dose and different size doped regions. We describe the different etching regimes for pattern transfer of FIB implanted Ga masks in silicon. The paper studied the influence of the implantation dose on the silicon surface, the masking effect and the mask resistance to erosion at dry etching. Based on these results we conclude about the possibility of using this method to create micro-and nanoscale silicon structures.

  4. Evaluation of Pentafluoroethane and 1,1-Difluoroethane for a Dielectric Etch Application in an Inductively Coupled Plasma Etch Tool

    NASA Astrophysics Data System (ADS)

    Karecki, Simon; Chatterjee, Ritwik; Pruette, Laura; Reif, Rafael; Sparks, Terry; Beu, Laurie; Vartanian, Victor

    2000-07-01

    In this work, a combination of two hydrofluorocarbon compounds, pentafluoroethane (FC-125, C2HF5) and 1,1-difluoroethane (FC-152a, CF2H-CH3), was evaluated as a potential replacement for perfluorocompounds in dielectric etch applications. A high aspect ratio oxide via etch was used as the test vehicle for this study, which was conducted in a commercial inductively coupled high density plasma etch tool. Both process and emissions data were collected and compared to those provided by a process utilizing a standard perfluorinated etch chemistry (C2F6). Global warming (CF4, C2F6, CHF3) and hygroscopic gas (HF, SiF4) emissions were characterized using Fourier transform infrared (FTIR) spectroscopy. FC-125/FC-152a was found to produce significant reductions in global warming emissions, on the order of 68 to 76% relative to the reference process. Although etch stopping, caused by a high degree of polymer deposition inside the etched features, was observed, process data otherwise appeared promising for an initial study, with good resist selectivity and etch rates being achieved.

  5. Eighteen-month clinical performance of a self-etching primer in unprepared class V resin restorations.

    PubMed

    Brackett, Willliam W; Brackett, Martha Goel; Dib, Alejandro; Franco, Guillermo; Estudillo, Hugo

    2005-01-01

    This study evaluated the clinical performance of unprepared Class V resin composites, placed using a self-etching primer and a single-bottle adhesive, over a period of 18 months. Thirty-eight pairs of restorations of Renew hybrid resin composite (BISCO, Inc) were placed using adhesives from the same manufacturer in caries-free cervical erosion/abfraction lesions. Based on insensitivity to air, the dentin in 76% of these lesions was considered to be sclerotic. The restorations were placed without abrasion of tooth surfaces, except for cleaning with plain pumice. One of each pair was placed using Tyrian, a self-etching primer and the other was placed using One-Step, a single-bottle adhesive placed after acid etching. Both the etchant and self-etching primer were applied for 20 seconds. The restorations were clinically evaluated at baseline, 6, 12 and 18 months, using modified Ryge/USPHS criteria. For both adhesives, very low retention of 50% to 56% of the restorations was observed over 18 months, leading to the conclusion that tooth surfaces must receive some additional treatment prior to restoration with these adhesives. No statistically significant difference (p=0.75) between the two adhesives was observed in overall performance, and dentinal sclerosis and axial depth did not appear to be important factors in the study.

  6. Cold laser machining of nickel-yttrium stabilised zirconia cermets: Composition dependence

    SciTech Connect

    Sola, D.

    2009-09-15

    Cold laser micromachining efficiency in nickel-yttrium stabilised zirconia cermets was studied as a function of cermet composition. Nickel oxide-yttrium stabilised zirconia ceramic plates obtained via tape casting technique were machined using 8-25 ns pulses of a Nd: YAG laser at the fixed wavelength of 1.064 {mu}m and a frequency of 1 kHz. The morphology of the holes, etched volume, drill diameter, shape and depth were evaluated as a function of the processing parameters such as pulse irradiance and of the initial composition. The laser drilling mechanism was evaluated in terms of laser-material interaction parameters such as beam absorptivity, material spallation and the impact on the overall process discussed. By varying the nickel oxide content of the composite the optical absorption (-value is greatly modified and significantly affected the drilling efficiency of the green state ceramic substrates and the morphology of the holes. Higher depth values and improved drilled volume upto 0.2 mm{sup 3} per pulse were obtained for substrates with higher optical transparency (lower optical absorption value). In addition, a laser beam self-focussing effect is observed for the compositions with less nickel oxide content. Holes with average diameter from 60 {mu}m to 110 {mu}m and upto 1 mm in depth were drilled with a high rate of 40 ms per hole while the final microstructure of the cermet obtained by reduction of the nickel oxide-yttrium stabilised zirconia composites remained unchanged.

  7. Laser Microdissection and Atmospheric Pressure Chemical Ionization Mass Spectrometry Coupled for Multimodal Imaging

    SciTech Connect

    Lorenz, Matthias; Ovchinnikova, Olga S; Kertesz, Vilmos; Van Berkel, Gary J

    2013-01-01

    This paper describes the coupling of ambient laser ablation surface sampling, accomplished using a laser capture microdissection system, with atmospheric pressure chemical ionization mass spectrometry for high spatial resolution multimodal imaging. A commercial laser capture microdissection system was placed in close proximity to a modified ion source of a mass spectrometer designed to allow for sampling of laser ablated material via a transfer tube directly into the ionization region. Rhodamine 6G dye of red sharpie ink in a laser etched pattern as well as cholesterol and phosphatidylcholine in a cerebellum mouse brain thin tissue section were identified and imaged from full scan mass spectra. A minimal spot diameter of 8 m was achieved using the 10X microscope cutting objective with a lateral oversampling pixel resolution of about 3.7 m. Distinguishing between features approximately 13 m apart in a cerebellum mouse brain thin tissue section was demonstrated in a multimodal fashion including co-registered optical and mass spectral chemical images.

  8. Laser shaping of cartilage

    NASA Astrophysics Data System (ADS)

    Sobol, Emil N.; Bagratashvili, Victor N.; Omelchenko, Alexander I.; Sviridov, Alexander P.; Helidonis, Emmanuel S.; Kavvalos, George; Christodoulou, P. N.; Naoumidi, I.; Velegrakis, G.; Ovchinnikov, Yuriy M.; Shechter, A.

    1994-09-01

    The carbon dioxide laser has been used for the first time to change the cartilage's shape. After the laser irradiation the cartilage has the tendency to retain its new form. Different types of laser modified cartilage structures were studied. The inferred physical mechanism for cartilage shaping using the stresses relaxation process is presented. The clinical significance of the results for corrective laser surgery is discussed.

  9. Evaluation of ASR potential of quartz-rich rocks by alkaline etching of polished rock sections

    NASA Astrophysics Data System (ADS)

    Šachlová, Šárka; Kuchařová, Aneta; Pertold, Zdeněk; Přikryl, Richard

    2015-04-01

    standard AMBT (folowing ASTM C1260). The etching experiment is regarded to be feasible method to quantify ASR potential of quartz- (resp. SiO2-) rich rocks. Employement of the method: (1) decreases potential error from less experienced operator; (2) minimizes the volume of the rock need to be analyzed; (3) enables to visualize microscopic features where ASR originates; and (4) enables to identify alkali-reactive components in the rocks. The main disadvatage of the method is regarded in the restriction to quartz- (resp. SiO2-) rich rocks. If other minerals are included in the rocks their role in ASR should be considered. These minerals can be excluded from the analysis in case they are not reactive and if their content is very low (e.g. accesory minerals). If the minerals contribute to ASR (e.g. albite, micas), these mineral phases should be included in the analysis. Then the application of PIA needs to be modified in respect to different grey shades of individual minerals.

  10. Micro structuring of transparent materials with NIR ns-laser pulses

    NASA Astrophysics Data System (ADS)

    Zehnder, S.; Schwaller, P.; von Arx, U.; Bucher, G.; Neuenschwander, B.

    A current challenge in laser processing is high precision micromachining of transparent materials, e.g. to manufacture microoptical elements. This can be achieved amongst others by using laser induced backside wet etching. Research has been done by several groups in the last years. Most of the published results were obtained by using UV excimer lasers. Our approach deals with the implementation of the technique for NIR laser sources. We investigated the effects of different pulse widths and repetition rates on laser induced back side wet etching for 1064 nm wavelength and for different absorbers.

  11. Automated process control for plasma etching

    NASA Astrophysics Data System (ADS)

    McGeown, Margaret; Arshak, Khalil I.; Murphy, Eamonn

    1992-06-01

    This paper discusses the development and implementation of a rule-based system which assists in providing automated process control for plasma etching. The heart of the system is to establish a correspondence between a particular data pattern -- sensor or data signals -- and one or more modes of failure, i.e., a data-driven monitoring approach. The objective of this rule based system, PLETCHSY, is to create a program combining statistical process control (SPC) and fault diagnosis to help control a manufacturing process which varies over time. This can be achieved by building a process control system (PCS) with the following characteristics. A facility to monitor the performance of the process by obtaining and analyzing the data relating to the appropriate process variables. Process sensor/status signals are input into an SPC module. If trends are present, the SPC module outputs the last seven control points, a pattern which is represented by either regression or scoring. The pattern is passed to the rule-based module. When the rule-based system recognizes a pattern, it starts the diagnostic process using the pattern. If the process is considered to be going out of control, advice is provided about actions which should be taken to bring the process back into control.

  12. Ion orbits in plasma etching of semiconductors

    SciTech Connect

    Madziwa-Nussinov, Tsitsi G.; Arnush, Donald; Chen, Francis F.

    2008-01-15

    Fabrication of high-speed semiconductor circuits depends on etching submicron trenches and holes with straight walls, guided by sheath accelerated ions, which strike the substrate at a normal angle. Electrons accumulate at the nonconductive entrance of each trench, charging it negatively and preventing the penetration of electrons to the bottom of the trench. This 'electron shading' effect causes an ion charge at the bottom, which is well known to cause damage to thin oxide layers. In addition, the deflection of ions by electric fields in the trench can cause deformation of the trench shape. To study this effect, the ion orbits are computed self-consistently with their charging of the trench walls. It is found that (a) the orbits depend only on the electric fields at the entrance and are sensitive to changes in the shape of the photoresist layer there; (b) there is an 'ion shading' effect that protects part of the wall; and (c) the number of ions striking the wall is too small to cause any deformation thereof.

  13. Marginal permeability of self-etch and total-etch adhesive systems.

    PubMed

    Owens, Barry M; Johnson, William W; Harris, Edward F

    2006-01-01

    This study evaluated microleakage in vitro of self-etch and multi-step, total-etch adhesive systems. Ninety-six extracted non-carious human molars were randomly assigned to eight groups (n=12) and restored with different adhesive systems: Optibond Solo Plus, iBond, Adper Prompt L-Pop, Xeno III, Simplicity, Nano-Bond, Adper Scotchbond Multi-Purpose and Touch & Bond. Each group was treated following the manufacturer's instructions. Class V cavities were prepared on the facial or lingual surfaces of each tooth with coronal margins in enamel and apical margins in cementum (dentin). The teeth were restored with Z-100 resin composite. After polishing with Sof-Lex disks, the teeth were thermocycled for 1000 cycles and coated with nail varnish to within 1.0 mm of the restoration. The teeth were stained in 1% methylene blue dye for 24 hours and sectioned from the facial to lingual surface. Dye penetration (microleakage) was examined with a 20x binocular microscope. Enamel and dentin margin leakage was scored on a 0 to 3 ordinal scale. Data were analyzed using Kruskal-Wallis Analysis of Variance and Mann-Whitney U tests. Comparison of the adhesive groups at the enamel margin revealed: 1) Adper Scotchbond Multi-Purpose exhibited significantly less leakage than the other adhesive groups (except iBond); 2) among the self-etch adhesive groups, iBond exhibited significantly less leakage than Nano-Bond and 3) the other adhesive groups clustered intermediately. In contrast, there were no significant differences among the adhesive groups when the dentin margin was evaluated. A Wilcoxin signed rank test showed significantly less leakage at the enamel margins compared to the dentin margins of the eight adhesive systems tested. All data were submitted to statistical analysis at p<0.05 level of significance.

  14. Bindi tattoo on forehead: success with modified R-20 technique using low fluence q-switched nd yag laser: a case report.

    PubMed

    Zawar, Vijay; Sarda, Aarti; De, Abhishek

    2014-01-01

    Bindi tattoo on the forehead, is one of the cultural practice in Indian women from rural areas. Many patients are not pleased with the appearance of their tattoo and thus seek removal. The development of quality-switched lasers has revolutionized the removal of unwanted tattoos. However, despite multiple treatment sessions, the efficacy is often found to be limited. We herein report a case of green-blue bindi tattoo which failed to clear after 8 sessions of Q-switched Nd YAG laser. The tattoo significantly cleared with R-20 method using low fluence Q-switched Nd YAG Laser. R-20 technique seems to be an effective method of tattoo removal and might be a boon for patients who are reluctant to pursue laser treatment because of fear of expenditure, side effects and uncertainty of result. We report efficacy of R-20 technique for a bindi tattoo on forehead.

  15. Visible luminescence from silicon wafers subjected to stain etches

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; George, T.; Ksendzov, A.; Vasquez, R. P.

    1992-01-01

    Etching of Si in a variety of solutions is known to cause staining. These stain layers consist of porous material similar to that produced by anodic etching of Si in HF solutions. In this work, photoluminescence peaked in the red from stain-etched Si wafers of different dopant types, concentrations, and orientations produced in solutions of HF:HNO3:H2O was observed. Luminescence is also observed in stain films produced in solutions of NaNO2 in HF, but not in stain films produced in solutions of CrO3 in HF. The luminescence spectra are similar to those reported recently for porous Si films produced by anodic etching in HF solutions. However, stain films are much easier to produce, requiring no special equipment.

  16. System for etching thick aluminum layers minimizes bridging and undercutting

    NASA Technical Reports Server (NTRS)

    1966-01-01

    Four step photoresist process for etching thick aluminum layers for semiconductor device contacts produces uniform contact surfaces, eliminates bridging, minimizes undercutting, and may be used on various materials of any thickness.

  17. Electrolytic etching process provides effective bonding surface on stainless steel

    NASA Technical Reports Server (NTRS)

    1966-01-01

    Electrolytic etching process prepares surfaces of a stainless steel shell for reliable, high strength adhesive bonding to dielectric materials. The process uses a 25 percent aqueous solution of phosphoric acid.

  18. 157. Copy of Louis Rosenberg Etching (original in the Tower ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    157. Copy of Louis Rosenberg Etching (original in the Tower City Development Office) TERMINAL TOWER UNDER CONSTRUCTION, STEEL FRAMEWORK OF THE SOUTHWEST WING, VIEW WEST TO EAST - Terminal Tower Building, Cleveland Union Terminal, 50 Public Square, Cleveland, Cuyahoga County, OH

  19. Chemical etching for automatic processing of integrated circuits

    NASA Technical Reports Server (NTRS)

    Kennedy, B. W.

    1981-01-01

    Chemical etching for automatic processing of integrated circuits is discussed. The wafer carrier and loading from a receiving air track into automatic furnaces and unloading onto a sending air track are included.

  20. Self-etch adhesive systems: a literature review.

    PubMed

    Giannini, Marcelo; Makishi, Patrícia; Ayres, Ana Paula Almeida; Vermelho, Paulo Moreira; Fronza, Bruna Marin; Nikaido, Toru; Tagami, Junji

    2015-01-01

    This paper presents the state of the art of self-etch adhesive systems. Four topics are shown in this review and included: the historic of this category of bonding agents, bonding mechanism, characteristics/properties and the formation of acid-base resistant zone at enamel/dentin-adhesive interfaces. Also, advantages regarding etch-and-rinse systems and classifications of self-etch adhesive systems according to the number of steps and acidity are addressed. Finally, issues like the potential durability and clinical importance are discussed. Self-etch adhesive systems are promising materials because they are easy to use, bond chemically to tooth structure and maintain the dentin hydroxyapatite, which is important for the durability of the bonding.