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Sample records for modulation doped heterostructures

  1. Electron mobility in modulation-doped heterostructures

    NASA Technical Reports Server (NTRS)

    Walukiewicz, W.; Ruda, H. E.; Lagowski, J.; Gatos, H. C.

    1984-01-01

    A model for electron mobility in a two-dimensional electron gas confined in a triangular well was developed. All major scattering processes (deformation potential and piezoelectric acoustic, polar optical, ionized impurity, and alloy disorder) were included, as well as intrasubband and intersubband scattering. The model is applied to two types of modulation-doped heterostructures, namely GaAs-GaAlAs and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As. In the former case, phonons and remote ionized impurities ultimately limit the mobility, whereas in the latter, alloy disorder is a predominant scattering process at low temperatures. The calculated mobilities are in very good agreement with recently reported experimental characteristics for both GaAs-Ga(1-x)Al(x)As and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As modulation-doped heterostructures.

  2. Analysis of energy states in modulation doped multiquantum well heterostructures

    NASA Technical Reports Server (NTRS)

    Ji, G.; Henderson, T.; Peng, C. K.; Huang, D.; Morkoc, H.

    1990-01-01

    A precise and effective numerical procedure to model the band diagram of modulation doped multiquantum well heterostructures is presented. This method is based on a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. It can be used rather easily in any arbitrary modulation-doped structure. In addition to confined energy subbands, the unconfined states can be calculated as well. Examples on realistic device structures are given to demonstrate capabilities of this procedure. The numerical results are in good agreement with experiments. With the aid of this method the transitions involving both the confined and unconfined conduction subbands in a modulation doped AlGaAs/GaAs superlattice, and in a strained layer InGaAs/GaAs superlattice are identified. These results represent the first observation of unconfined transitions in modulation doped multiquantum well structures.

  3. Photo-induced Modulation Doping in Graphene/Boron nitride Heterostructures

    NASA Astrophysics Data System (ADS)

    Velasco, Jairo, Jr.; Ju, Long; Hwang, Edwin; Kahn, Salman; Nosiglia, Casey; Tsai, Hsin-Zon; Yang, Wei; Zhang, Guangyu; Taniguchi, Takashi; Watanabe, Kenji; Zhang, Yuanbo; Crommie, Michael; Zettl, Alex; Wang, Feng

    2014-03-01

    Van der Waals heterostructures (VDH) provide an exciting new platform for materials engineering, where a variety of layered materials with different electrical, optical and mechanical responses can be stacked together to enable new physics and novel functionalities. We report an emerging optoelectronic phenomenon (i.e. photo-induced modulation doping) in the graphene-boron nitride VDH (G/BN heterostructure). We find it enables flexible and repeatable writing and erasing of charge doping in graphene with optical light. We show that the photo-induced modulation doping maintains the remarkable carrier mobility of the G/BN heterostructure, and it can be used to generate spatially varying doping profiles like pn junctions. Our work contributes towards understanding light matter interactions in VDHs, and introduces a simple technique for creating inhomogeneous doping in high mobility graphene devices. J. Velasco Jr. acknowledges support from UC President's Postdoctoral Fellowship.

  4. Investigating the thermal stability of electron transport properties in modulation-doped semiconductor heterostructure systems

    NASA Astrophysics Data System (ADS)

    Pilgrim, Ian; Scannell, Billy; See, Andrew; Montgomery, Rick; Morse, Peter; Fairbanks, Matt; Marlow, Colleen; Linke, Heiner; Farrer, Ian; Ritchie, David; Hamilton, Alex; Micolich, Adam; Eaves, Laurence; Taylor, Richard

    2013-03-01

    Since the 1950s, materials scientists have pursued the fabrication of solid-state heterostructure (HS) devices of sufficient purity to replicate electron interference effects originally observed in vacuum. The ultimate goal of HS engineering is to create a semiconductor ``billiard table'' in which electrons travel ballistically in a 2-D plane--that is, with scattering events minimized such that the electron's mean free path exceeds the device size. For the past two decades, the modulation-doped (MD) HS architecture has yielded devices supporting very high electron mobilities. In this architecture, ionized dopants are spatially removed from the plane of the electrons, such that their influence on electron trajectories is felt through presumably negligible small-angle scattering events. However, we observe that thermally induced charge redistribution in the doped layers of AlGaAs/GaAs and GaInAs/InP MD heterostructures significantly alters electron transport dynamics as measured by magnetoconductance fluctuations. This result demonstrates that small-angle scattering plays a far larger role than expected in influencing conduction properties. Funded by the Office of Naval Research, US Air Force, Australian Research Council, and Research Corporation for Science Advancement

  5. High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application

    NASA Astrophysics Data System (ADS)

    Abe, Masayuki; Kogushi, Noriaki; Ang, Kian Siong; Hofstetter, René; Manoj, Kumar; Retnam, Louis Nicholas; Wang, Hong; Ng, Geok Ing; Jin, Chon; Pavlidis, Dimitris

    Novel thermopiles based on modulation doped AlGaAs/InGaAs and AlGaN/GaN heterostructures are proposed and developed for the first time, for uncooled infrared FPA (Focal Plane Array) image sensor application. The high responsivity with the high speed response time are designed to 4,900V/W with 110µs for AlGaAs/InGaAs, and to 460V/W with 9µs for AlGaN/GaN thermopiles, respectively. Based on integrated HEMT-MEMS technology, the AlGaAs/InGaAs 32×32 matrix FPAs are fabricated to demonstrate its enhanced performances by black body measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled infrared FPA image sensor application.

  6. Modulation-Doped SrTiO3/SrTi1-xZrxO3 Heterostructures

    NASA Astrophysics Data System (ADS)

    Kajdos, Adam Paul

    surface reconstruction from (1x1) to (2x1) to c(4x4) is correlated with a change from mixed SrO/TiO2 to pure TiO2 surface termination. It is argued that optimal cation stoichiometry is achieved for growth conditions within the XRD-defined growth window that result in a c(4x4) surface lattice. The development of a doped perovskite oxide semiconductor with a suitable conduction band offset is then discussed as the next necessary step towards realizing modulation-doped heterostructures. The SrTixZr1-x O3 solid solution is investigated for this purpose, with a focus on optimizing cation stoichiometry to allow for controlled doping. In particular, the hybrid MBE growth of SrTixZr1-xO3 thin films is explored using a metal-organic precursor for Zr, zirconium tert-butoxide (ZTB). The successful generation of 2DEGs by modulation doping of SrTiO3 is then demonstrated in SrTiO3/La:SrTi0.95Zr0.05O 3 heterostructures, and the electronic structure is studied by Shubnikov-de Haas analysis using multiple-subband models.

  7. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    NASA Astrophysics Data System (ADS)

    Morrison, C.; Casteleiro, C.; Leadley, D. R.; Myronov, M.

    2016-09-01

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm2/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m0. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  8. Transparent Oxide Thin-Film Transistors Using n-(In2O3)0.9(SnO2)0.1/InGaZnO4 Modulation-Doped Heterostructures

    NASA Astrophysics Data System (ADS)

    Taniguchi, Satoshi; Yokozeki, Mikihiro; Ikeda, Masao; Suzuki, Toshi-kazu

    2011-04-01

    We investigated transparent oxide thin-film transistors (TFTs) using n-(In2O3)0.9(SnO2)0.1/InGaZnO4 (n-ITO/IGZO) modulation-doped heterostructures, which are effective in achieving high carrier mobilities. From transmittance measurements and UV photoemission spectroscopy, n-ITO/IGZO modulation-doped heterostructures are expected to realize the type-II energy band lineup, in which both the conduction band minimum and the valence band maximum of n-ITO are higher in energy than those of IGZO. Van der Pauw Hall measurements revealed Hall mobility enhancement and two-dimensional behavior of electrons at the n-ITO/IGZO interface. Using the n-ITO/IGZO modulation-doped heterostructures, we obtained TFTs with higher electron mobility than that of IGZO TFTs. We consider that modulation doping is a promising method for performance improvements of TFTs using transparent oxide semiconductors.

  9. High-transconductance p-channel modulation-doped AlGaAs/GaAs heterostructure FET's

    NASA Astrophysics Data System (ADS)

    Hirano, Makoto; Oe, Kunishige; Yanagawa, Fumihiko

    1986-05-01

    p-channel modulation-doped AlGaAs-GaAs heterostructure FET's (p-HFET's) employing two-dimensional hole gas (2DHG) were fabricated under various geometrical device parameter conditions. The p-HFET characteristics were measured at 300 and 77 K for the following three device-parameter ranges: the gate length Lg(1-320 microns), the gate-source distance Lgs(0.5-5 microns), and the layer thickness d1(35-58 nm) of AlGaAs beneath the gate. Based on the obtained results, a high-performance enhancement-mode p-HFET was fabricated with the following parameters: Lg = 1 microns, Lgs = 0.5 microns, and d1 = 35 nm . The achieved extrinsic transconductance gm was 75 mS/mm at 77 K. This experimental result indicates that a gm greater than 200 mS/mm at 77 K can be obtained in 1-micron gate p-HFET devices.

  10. Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

    NASA Astrophysics Data System (ADS)

    Khmissi, H.; Baira, M.; Sfaxi, L.; Bouzaïene, L.; Saidi, F.; Bru-Chevallier, C.; Maaref, H.

    2011-03-01

    Optical properties of InAs quantum dots (QDs) inserted in AlGaAs/GaAs modulation doped heterostructure are investigated. To study the effect of carrier transfer behavior on the luminescence of self-assembled quantum dots, a series of sample has been prepared using molecular beam epitaxy (Riber 32 system) in which we have varied the thickness separating the delta dopage and the InAs quantum dots layer. Photoluminescence spectra show the existence of two peaks that can be attributed to transition energies from the ground state (E1-HH1) and the first excited state (E2-HH2). Two antagonist effects have been observed, a blue shift of the emission energies result from electron transferred from the AlGaAs/GaAs heterojunction to the InAs quantum dots and a red shift caused by the quantum confined Stark effect due to the internal electric field existing In the AlGaAs/GaAs heterojunction.

  11. Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

    SciTech Connect

    Khmissi, H.; Baira, M.; Bouzaieene, L.; Saidi, F.; Maaref, H.; Sfaxi, L.; Bru-Chevallier, C.

    2011-03-01

    Optical properties of InAs quantum dots (QDs) inserted in AlGaAs/GaAs modulation doped heterostructure are investigated. To study the effect of carrier transfer behavior on the luminescence of self-assembled quantum dots, a series of sample has been prepared using molecular beam epitaxy (Riber 32 system) in which we have varied the thickness separating the delta dopage and the InAs quantum dots layer. Photoluminescence spectra show the existence of two peaks that can be attributed to transition energies from the ground state (E{sub 1}-HH{sub 1}) and the first excited state (E{sub 2}-HH{sub 2}). Two antagonist effects have been observed, a blue shift of the emission energies result from electron transferred from the AlGaAs/GaAs heterojunction to the InAs quantum dots and a red shift caused by the quantum confined Stark effect due to the internal electric field existing In the AlGaAs/GaAs heterojunction.

  12. Electron Spin Resonance on Mobile and Confined States in Gated Modulation Doped Si/SiGe Heterostructures

    NASA Astrophysics Data System (ADS)

    He, Jianhua; Malissa, H.; Lu, Tzu-Ming; Shankar, S.; Tyryshkin, A. M.; Lyon, S. A.; Chen, Hung-Ming; Kuan, Chieh-Hsiung

    2010-03-01

    Electron spins in quantum dots in Si/SiGe heterostructures are promising qubits but controlling and measuring spins in gated dots is challenging. Fortunately, electrons confined into natural quantum dots by interface disorder can capture the spin physics with minimal processing, exhibiting long T1 and T2 at the Si/SiO2 interface^1. Natural quantum dots in the Si/SiGe system may be similarly useful. As a first step, we have fabricated a 2.2 x 13mm^2 Hall bar on a Si/SiGe substrate gated with an Al gate above an Al2O3 insulator, and performed electron spin resonance (ESR) at gate voltages above and below threshold. The ESR signal arising from the Si quantum well evolves with gate voltage, and its intensity (spin susceptibility) is measured as a function of temperature down to 0.4K. The susceptibility follows a Pauli dependence when the gate is biased above threshold, while it is Curie-like below threshold, indicating an evolution from a mobile 2D system towards localized states confined in natural dots by the intrinsic disorder in the quantum well. This work is supported by LPS and ARO. [1] S. Shankar, et al., Physica E, 40, 1659-1661 (2008).

  13. Negative terahertz conductivity in remotely doped graphene bilayer heterostructures

    SciTech Connect

    Ryzhii, V.; Ryzhii, M.; Mitin, V.; Shur, M. S.; Otsuji, T.

    2015-11-14

    Injection or optical generation of electrons and holes in graphene bilayers (GBLs) can result in the interband population inversion enabling the terahertz (THz) radiation lasing. The intraband radiative processes compete with the interband transitions. We demonstrate that remote doping enhances the indirect interband generation of photons in the proposed GBL heterostructures. Therefore, such remote doping helps to surpass the intraband (Drude) absorption, and results in large absolute values of the negative dynamic THz conductivity in a wide range of frequencies at elevated (including room) temperatures. The remotely doped GBL heterostructure THz lasers are expected to achieve higher THz gain compared with previously proposed GBL-based THz lasers.

  14. Modulated two-dimensional charge-carrier density in LaTiO3-layer-doped LaAlO3/SrTiO3 heterostructure.

    PubMed

    Nazir, Safdar; Bernal, Camille; Yang, Kesong

    2015-03-11

    The highly mobile two-dimensional electron gas (2DEG) formed at the polar/nonpolar LaAlO3/SrTiO3 (LAO/STO) heterostructure (HS) is a matter of great interest because of its potential applications in nanoscale solid-state devices. To realize practical implementation of the 2DEG in device design, desired physical properties such as tuned charge carrier density and mobility are necessary. In this regard, polar perovskite-based transition metal oxides can act as doping layers at the interface and are expected to tune the electronic properties of 2DEG of STO-based HS systems dramatically. Herein, we investigated the doping effects of LaTiO3(LTO) layers on the electronic properties of 2DEG at n-type (LaO)(+1)/(TiO2)(0) interface in the LAO/STO HS using spin-polarized density functional theory calculations. Our results indicate an enhancement of orbital occupation near the Fermi energy, which increases with respect to the number of LTO unit cells, resulting in a higher charge carrier density of 2DEG than that of undoped system. The enhanced charge carrier density is attributed to an extra electron introduced by the Ti 3d(1) orbitals from the LTO dopant unit cells. This conclusion is consistent with the recent experimental findings (Appl. Phys. Lett. 2013, 102, 091601). Detailed charge density and partial density of states analysis suggests that the 2DEG in the LTO-doped HS systems primarily comes from partially occupied dyz and dxz orbitals.

  15. Photo doping effect in graphene/BN heterostructure

    NASA Astrophysics Data System (ADS)

    Ju, Long; Velasco, Jairo, Jr.; Hwang, Edwin; Kim, Jonghwan; Wang, Feng

    2013-03-01

    Boron nitride has been demonstrated as an ideal substrate to achieve high mobility in graphene. At the same time We observed strong change of graphene transport properties by shining light on graphene/BN heterostructure. This is attributed to photo doping effect induced by impurity excitation in BN. Optical spectroscopy based on this photo-doping effects enables us to probe impurities in crystalline BN. Such information will be important for potential applications based on graphene/BN heterostructures. The potential of applying similar technique to probe defects in other insulators and semiconductors will also be discussed.

  16. Voltage-impulse-induced dual-range nonvolatile magnetization modulation in metglas/PZT heterostructure

    NASA Astrophysics Data System (ADS)

    Tang, Xiaoli; Su, Hua; Zhang, Huaiwu; Sun, Nian X.

    2016-11-01

    Dual-range, nonvolatile magnetization modulation induced by voltage impulses was investigated in the metglas/lead zirconate titanate (PZT) heterostructure at room temperature. The heterostructure was obtained by bonding a square metglas ribbon on the top electrode of the PZT substrate, which contained defect dipoles resulting from acceptor doping. The PZT substrate achieved two strain hysteretic loops with the application of specific voltage impulse excitation modes. Through strain-mediated magnetoelectric coupling between the metglas ribbon and the PZT substrate, two strain hysteretic loops led to a dual-range nonvolatile magnetization modulation in the heterostructure. Reversible and stable voltage-impulse-induced nonvolatile modulation in the ferromagnetic resonance field and magnetic hysteresis characteristics were also realized. This method provides a promising approach in reducing energy consumption in magnetization modulation and other related devices.

  17. Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti, Zr)O3 heterostructure

    NASA Astrophysics Data System (ADS)

    Kajdos, Adam P.; Ouellette, Daniel G.; Cain, Tyler A.; Stemmer, Susanne

    2013-08-01

    A two-dimensional electron gas (2DEG) in SrTiO3 is created via modulation doping by interfacing undoped SrTiO3 with a wider-band-gap material, SrTi1-xZrxO3, which is doped n-type with La. All layers are grown using hybrid molecular beam epitaxy. Using magnetoresistance measurements, we show that electrons are transferred into the SrTiO3, and a 2DEG is formed. In particular, Shubnikov-de Haas oscillations are shown to depend only on the perpendicular magnetic field. Experimental Shubnikov-de Haas oscillations are compared with calculations that assume multiple occupied subbands.

  18. The influence of impurity profiles on mobility of two-dimensional electron gas in AlGaAs/InGaAs/GaAs heterostructures modulation-doped by donors and acceptors

    NASA Astrophysics Data System (ADS)

    Protasov, D. Yu.; Zhuravlev, K. S.

    2017-03-01

    The low-temperature mobility of two-dimensional electron gas (2DEG) limited scattering by ionized impurities, alloy disorder, acoustic and optical phonons, and interface roughness was calculated for novel pseudomorphic modulation-doped by donors and acceptors InGaAs/AlGaAs quantum well structures promising for high power microwave transistors. Due to the high 2DEG density in the quantum well intersubband transitions were taken into account. Scattering by the ionized donors from δ-layer located in AlGaAs barriers dominates, whereas scattering by the ionized acceptors occupying the most part of AlGaAs barriers is negligibly weak. The width of donor doping profile is a key parameter to control 2DEG mobility, thus, increasing of the profile width from 0.25 nm to 4 nm due to segregation and diffusion of donor atoms halves the mobility. We have proposed a few approaches for the weakening of Coulomb scattering and the increase in 2DEG mobility in the novel heterostructures. The predicted mobility enhancement due to δ-layer splitting into two δ-sublayers was verified experimentally.

  19. Bipolar doping of double-layer graphene vertical heterostructures with hydrogenated boron nitride.

    PubMed

    Liu, Zhun; Wang, Ru-Zhi; Liu, Li-Min; Lau, Woon-Ming; Yan, Hui

    2015-05-07

    Using first-principles calculations, we examined the bipolar doping of double-layer graphene vertical heterostructures, which are constructed by hydrogenated boron nitride (BN) sheets sandwiched into two parallel graphene monolayers. The built-in potential difference in hydrogenated BN breaks the interlayer symmetry, resulting in the p- and n-type doping of two graphene layers at 0.83 and -0.8 eV, respectively. By tuning the interlayer spacing between the graphene and hydrogenated BN, the interfacial dipole and screening charge distribution can be significantly affected, which produces large modulations in band alignments, doping levels and tunnel barriers. Furthermore, we present an analytical model to predicate the doping level as a function of the average interlayer spacing. With large interlayer spacings, the "pillow effect" (Pauli repulsion at the highly charge overlapped interface) is diminished and the calculated Dirac point shifts are in good accordance with our prediction models. Our investigations suggest that this double-layer graphene heterostructures constructed using two-dimensional Janus anisotropic materials offer exciting opportunities for developing novel nanoscale optoelectronic and electronic devices.

  20. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

    NASA Astrophysics Data System (ADS)

    Arezki, Hakim; Boutchich, Mohamed; Alamarguy, David; Madouri, Ali; Alvarez, José; Cabarrocas, Pere Roca i.; Kleider, Jean-Paul; Yao, Fei; Lee, Young Hee

    2016-10-01

    Large-area graphene film is of great interest for a wide spectrum of electronic applications, such as field effect devices, displays, and solar cells, among many others. Here, we fabricated heterostructures composed of graphene (Gr) grown by chemical vapor deposition (CVD) on copper substrate and transferred to SiO2/Si substrates, capped by n- or p-type doped amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition. Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline. The sheet resistance varies from 360 Ω sq-1 to 1260 Ω sq-1 for the (p)-a-Si:H/Gr (n)-a-Si:H/Gr, respectively. We observed a temperature independent hole mobility of up to 1400 cm2 V-1 s-1 indicating that charge impurity is the principal mechanism limiting the transport in this heterostructure. We have demonstrated that embedding CVD graphene under a-Si:H is a viable route for large scale graphene based solar cells or display applications.

  1. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures.

    PubMed

    Arezki, Hakim; Boutchich, Mohamed; Alamarguy, David; Madouri, Ali; Alvarez, José; Cabarrocas, Pere Roca I; Kleider, Jean-Paul; Yao, Fei; Hee Lee, Young

    2016-10-12

    Large-area graphene film is of great interest for a wide spectrum of electronic applications, such as field effect devices, displays, and solar cells, among many others. Here, we fabricated heterostructures composed of graphene (Gr) grown by chemical vapor deposition (CVD) on copper substrate and transferred to SiO2/Si substrates, capped by n‑ or p-type doped amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition. Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline. The sheet resistance varies from 360 Ω sq(-1) to 1260 Ω sq(-1) for the (p)-a-Si:H/Gr (n)-a-Si:H/Gr, respectively. We observed a temperature independent hole mobility of up to 1400 cm(2) V(-1) s(-1) indicating that charge impurity is the principal mechanism limiting the transport in this heterostructure. We have demonstrated that embedding CVD graphene under a-Si:H is a viable route for large scale graphene based solar cells or display applications.

  2. Nanomechanical electro-optical modulator based on atomic heterostructures

    PubMed Central

    Thomas, P. A.; Marshall, O. P.; Rodriguez, F. J.; Auton, G. H.; Kravets, V. G.; Kundys, D.; Su, Y.; Grigorenko, A. N.

    2016-01-01

    Two-dimensional atomic heterostructures combined with metallic nanostructures allow one to realize strong light–matter interactions. Metallic nanostructures possess plasmonic resonances that can be modulated by graphene gating. In particular, spectrally narrow plasmon resonances potentially allow for very high graphene-enabled modulation depth. However, the modulation depths achieved with this approach have so far been low and the modulation wavelength range limited. Here we demonstrate a device in which a graphene/hexagonal boron nitride heterostructure is suspended over a gold nanostripe array. A gate voltage across these devices alters the location of the two-dimensional crystals, creating strong optical modulation of its reflection spectra at multiple wavelengths: in ultraviolet Fabry–Perot resonances, in visible and near-infrared diffraction-coupled plasmonic resonances and in the mid-infrared range of hexagonal boron nitride's upper Reststrahlen band. Devices can be extremely subwavelength in thickness and exhibit compact and truly broadband modulation of optical signals using heterostructures of two-dimensional materials. PMID:27874003

  3. Photoelectrochemical Performance Observed in Mn-Doped BiFeO3 Heterostructured Thin Films

    PubMed Central

    Xu, Hao-Min; Wang, Huanchun; Shi, Ji; Lin, Yuanhua; Nan, Cewen

    2016-01-01

    Pure BiFeO3 and heterostructured BiFeO3/BiFe0.95Mn0.05O3 (5% Mn-doped BiFeO3) thin films have been prepared by a chemical deposition method. The band structures and photosensitive properties of these films have been investigated elaborately. Pure BiFeO3 films showed stable and strong response to photo illumination (open circuit potential kept −0.18 V, short circuit photocurrent density was −0.023 mA·cm−2). By Mn doping, the energy band positions shifted, resulting in a smaller band gap of BiFe0.95Mn0.05O3 layer and an internal field being built in the BiFeO3/BiFe0.95Mn0.05O3 interface. BiFeO3/BiFe0.95Mn0.05O3 and BiFe0.95Mn0.05O3 thin films demonstrated poor photo activity compared with pure BiFeO3 films, which can be explained by the fact that Mn doping brought in a large amount of defects in the BiFe0.95Mn0.05O3 layers, causing higher carrier combination and correspondingly suppressing the photo response, and this negative influence was more considerable than the positive effects provided by the band modulation. PMID:28335343

  4. Graphene/CdTe heterostructure solar cell and its enhancement with photo-induced doping

    SciTech Connect

    Lin, Shisheng Chen, Hongsheng; Li, Xiaoqiang; Zhang, Shengjiao; Wang, Peng; Xu, Zhijuan; Zhong, Huikai; Wu, Zhiqian

    2015-11-09

    We report a type of solar cell based on graphene/CdTe Schottky heterostructure, which can be improved by surface engineering as graphene is atomic thin. By coating a layer of ultrathin CdSe quantum dots onto graphene/CdTe heterostructure, the power conversion efficiency is increased from 2.08% to 3.10%. Photo-induced doping is mainly accounted for this enhancement, as evidenced by field effect transport, Raman, photoluminescence, and quantum efficiency measurements. This work demonstrates a feasible way of improving the performance of graphene/semiconductor heterostructure solar cells by combining one dimensional with two dimensional materials.

  5. Ga self-diffusion in isotopically enriched GaAs heterostructures doped with Si and Zn

    SciTech Connect

    Norseng, Marshall Stephen

    1999-12-01

    This study attempts to advance the modeling of AlGaAs/GaAs/AlAs diffusion by experimental investigation of Ga self-diffusion in undoped, as-grown doped and Zinc diffused structures. We utilize novel, isotopically enriched superlattice and heterostructure samples to provide direct observation and accurate measurement of diffusion with a precision not possible using conventional techniques.

  6. Conduction electrons in acceptor-doped GaAs/GaAlAs heterostructures: a review

    NASA Astrophysics Data System (ADS)

    Zawadzki, Wlodek; Raymond, Andre; Kubisa, Maciej

    2016-05-01

    We review magneto-optical and magneto-transport effects in GaAs/GaAlAs heterostructures doped in GaAlAs barriers with donors, providing two-dimensional (2D) electron gas (2DEG) in GaAs quantum wells (QWS), and additionally doped with smaller amounts of acceptors (mostly Be atoms) in the vicinity of 2DEG. One may also deal with residual acceptors (mostly C atoms). The behavior of such systems in the presence of a magnetic field differs appreciably from those doped in the vicinity of 2DEG with donors. Three subjects related to the acceptor-doped heterostructures are considered. First is the problem of bound states of conduction electrons confined to the vicinity of negatively charged acceptors by the joint effect of a QW and an external magnetic field parallel to the growth direction. A variational theory of such states is presented, demonstrating that an electron turning around a repulsive center has discrete energies above the corresponding Landau levels. Experimental evidence for the discrete electron energies comes from the work on interband photo-magneto-luminescence, intraband cyclotron resonance and quantum magneto-transport (the Quantum Hall and Shubnikov-de Haas effects). An electron rain-down effect at weak electric fields and a boil-off effect at strong electric fields are introduced. It is demonstrated, both theoretically and experimentally, that a negatively charged acceptor can localize more than one electron. The second subject describes experiment and theory of asymmetric quantized Hall and Shubnikov-de Haas plateaus in acceptor-doped GaAs/GaAlAs heterostructures. It is shown that the main features of the plateau asymmetry can be attributed to asymmetric density of Landau states in the presence of acceptors. However, at high magnetic fields, the rain-down effect is also at work. The third subject deals with the so-called disorder modes (DMs) in the cyclotron resonance of conduction electrons. The DMs originate from random distributions of negatively

  7. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures.

    PubMed

    Veal, Boyd W; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M; Eastman, Jeffrey A

    2016-06-10

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment.

  8. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

    PubMed Central

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M.; Eastman, Jeffrey A.

    2016-01-01

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment. PMID:27283250

  9. Composition-Modulated Two-Dimensional Semiconductor Lateral Heterostructures via Layer-Selected Atomic Substitution.

    PubMed

    Li, Honglai; Wu, Xueping; Liu, Hongjun; Zheng, Biyuan; Zhang, Qinglin; Zhu, Xiaoli; Wei, Zheng; Zhuang, Xiujuan; Zhou, Hong; Tang, Wenxin; Duan, Xiangfeng; Pan, Anlian

    2017-01-24

    Composition-controlled growth of two-dimensional layered semiconductor heterostructures is crucially important for their applications in multifunctional integrated photonics and optoelectronics devices. Here, we report the realization of composition completely modulated layered semiconductor MoS2-MoS2(1-x)Se2x (0 < x < 1) lateral heterostructures via the controlled layer-selected atomic substitution of pregrown stacking MoS2, with a bilayer located at the center of a monolayer. Through controlling the reaction time, S at the monolayer MoS2 at the peripheral area can be selectively substituted by Se atoms at different levels, while the bilayer region at the center retains the original composition. Microstructure characterizations demonstrated the formation of lateral heterostructures with a sharp interface, with the composition at the monolayer area gradually modulated from MoS2 to MoSe2 and having high-quality crystallization at both the monolayer and the bilayer areas. Photoluminescence and Raman mapping studies exhibit the tunable optical properties only at the monolayer region of the as-grown heterostructures, which further demonstrates the realization of high-quality composition/bandgap modulated lateral heterostructures. This work offers an interesting and easy route for the development of high-quality layered semiconductor heterostructures for potential broad applications in integrated nanoelectronic and optoelectronic devices.

  10. An investigation of dopping profile for a one dimensional heterostructure

    NASA Astrophysics Data System (ADS)

    Huang, Zhaohui

    2005-03-01

    A one-dimensional junction is formed by joining two silicon nanowires whose surfaces are terminated with capping groups of different electronegativity and polarizability. If this heterostructure is doped (with e.g. phosphorous) on the side with the higher bandgap, the system becomes a modulation doped heterostructure with novel one-dimensional electrostatics. We use density functional theory calculations in the pseudopotential approximation, plus empirical model calculations, to investigate doping profiles in this new class of nanostructures.

  11. Intrinsic Spin-Orbit Coupling in Superconducting Delta-Doped SrTiO3 Heterostructures

    SciTech Connect

    Bell, Christopher

    2011-08-19

    We report the violation of the Pauli limit due to intrinsic spin-orbit coupling in SrTiO{sub 3} heterostructures. Via selective doping down to a few nanometers, a two-dimensional superconductor is formed, geometrically suppressing orbital pair-breaking. The spin-orbit scattering is exposed by the robust in-plane superconducting upper critical field, exceeding the Pauli limit by a factor of 4. Transport scattering times several orders of magnitude higher than for conventional thin film superconductors enables a new regime to be entered, where spin-orbit coupling effects arise non-perturbatively.

  12. Manipulable GMR Effect in a δ-Doped Magnetically Confined Semiconductor Heterostructure

    NASA Astrophysics Data System (ADS)

    Jiang, Ya-Qing; Lu, Mao-Wang; Huang, Xin-Hong; Yang, Shi-Peng; Tang, Qiang

    2016-06-01

    A giant magnetoresistance (GMR) device formed by depositing two parallel nanosized ferromagnetic strips on top of a semiconductor heterostructure has been proposed theoretically (Zhai et al. in Phys Rev B 66:125305, 2002). For the sake of manipulating its performance, we introduce a tunable δ-potential into this device with the help of atomic-layer doping techniques such as molecular beam epitaxy (MBE) or metal-organic chemical-vapor deposition. We investigate theoretically the impact of such δ-doping on the magnetoresistance ratio (MR) of the GMR device. We find that, although the δ-doping is embedded in the device, a considerable GMR effect still exists due to the significant difference in electronic transmission between parallel (P) and antiparallel (AP) configurations. Moreover, the calculated results show that the MR of the GMR device varies sensitively with the weight and/or position of the δ-doping. Thus, the GMR device can be controlled by changing the δ-doping to obtain an adjustable GMR device for magnetoelectronics applications.

  13. Nanoscale Control of Rewriteable Doping Patterns in Pristine Graphene/Boron Nitride Heterostructures.

    PubMed

    Velasco, Jairo; Ju, Long; Wong, Dillon; Kahn, Salman; Lee, Juwon; Tsai, Hsin-Zon; Germany, Chad; Wickenburg, Sebastian; Lu, Jiong; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael F

    2016-03-09

    Nanoscale control of charge doping in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and technologically promising nanoelectronics. Electrostatic gating and chemical doping are the two most common methods to achieve local control of such doping. However, these approaches suffer from complicated fabrication processes that introduce contamination, change material properties irreversibly, and lack flexible pattern control. Here we demonstrate a clean, simple, and reversible technique that permits writing, reading, and erasing of doping patterns for 2D materials at the nanometer scale. We accomplish this by employing a graphene/boron nitride heterostructure that is equipped with a bottom gate electrode. By using electron transport and scanning tunneling microscopy (STM), we demonstrate that spatial control of charge doping can be realized with the application of either light or STM tip voltage excitations in conjunction with a gate electric field. Our straightforward and novel technique provides a new path toward on-demand graphene p-n junctions and ultrathin memory devices.

  14. Interactions of bound excitons in doped core/shell quantum dot heterostructures

    NASA Astrophysics Data System (ADS)

    Avidan, Assaf; Deutsch, Zvicka; Oron, Dan

    2010-10-01

    Spatial localization to a defect or a dopant of one of the charge carriers comprising an exciton, has a significant effect on the optical properties of bulk semiconductors. It is not clear, however, how these effects would change when considering semiconductor nanocrystals in the strong confinement regime. As we show here, under strong confinement, doping has a dramatic effect on the energetics of multiply excited states, which exhibit a strong size dependence. This is experimentally shown by performing multiexciton spectroscopy of CdSe/CdS and ZnSe/CdS colloidal quantum dot (QD) heterostructures, whose cores are nucleation-doped with few atoms of tellurium, leading to localization of the holes. The biexciton (BX) is shown to be strongly blueshifted relative to the bound exciton, in stark contrast with the corresponding undoped nanocrystals exhibiting a BX redshift. The energetics of the BX is shown to be determined mostly by the energy difference between the dopant state and the valence-band edge while the emission color is mostly determined by quantum confinement in the conduction band. By tailoring the nanocrystal’s structure we can thus independently control the emission color, the radiative decay rate and the BX repulsion. QD heterostructures harboring bound excitons are therefore excellent candidates for colloidal-based gain devices required to operate in the single exciton gain regime.

  15. Giant magnetoresistance in a two-dimensional electron gas modulated by magnetic barriers and the δ-doping

    NASA Astrophysics Data System (ADS)

    Zhang, Lan-Lan; Lu, Mao-Wang; Yang, Shi-Peng; Tang, Qiang

    2016-10-01

    We theoretically investigate the modulation of the δ-doping to a semiconductor-based giant magnetoresistance (GMR) device, which can be realized experimentally by depositing two parallel ferromagnetic (FM) stripes on top and bottom of a GaAs /AlxGa1-xAs heterostructure. It is shown that a considerable GMR effect still exists in this device with the δ-doping. It is also shown that the magnetoresistance ratio (MR) depends on not only the weight but also the position of the δ-doping. These interesting results will be useful in understanding and designing structurally-controllable GMR devices for magnetic information storage.

  16. Highly Luminescent Heterostructured Copper-Doped Zinc Sulfide Nanocrystals for Application in Cancer Cell Labeling.

    PubMed

    Ang, Huixiang; Bosman, Michel; Thamankar, Ramesh; Zulkifli, Muhammad Faizal B; Yen, Swee Kuan; Hariharan, Anushya; Sudhaharan, Thankiah; Selvan, Subramanian Tamil

    2016-08-18

    The structural characteristics of the seed-mediated synthesis of heterostructured CuS-ZnS nanocrystals (NCs) and Cu-doped ZnS (ZnS:Cu) NCs synthesized by two different protocols are compared and analyzed. At high Cu dopant concentrations, segregated subclusters of ZnS and CuS are observed. The photoluminescence quantum yield of ZnS:Cu NCs is about 50-80 %; a value much higher than that of ZnS NCs (6 %). Finally, these NCs are coated with a thin silica shell by using (3-mercaptopropyl)triethoxysilane in a reverse microemulsion to make them water soluble. Cytotoxicity experiments show that these silica-coated NCs have greatly reduced toxicity on both cancerous HeLa and noncancerous Chinese hamster ovary cells. The labeling of cancerous HeLa cells is also demonstrated.

  17. Gbps terahertz external modulator based on a composite metamaterial with a double-channel heterostructure.

    PubMed

    Zhang, Yaxin; Qiao, Shen; Liang, Shixiong; Wu, Zhenhua; Yang, Ziqiang; Feng, Zhihong; Sun, Han; Zhou, Yucong; Sun, Linlin; Chen, Zhi; Zou, Xianbing; Zhang, Bo; Hu, Jianhao; Li, Shaoqian; Chen, Qin; Li, Ling; Xu, Gaiqi; Zhao, Yuncheng; Liu, Shenggang

    2015-05-13

    The past few decades have witnessed a substantial increase in terahertz (THz) research. Utilizing THz waves to transmit communication and imaging data has created a high demand for phase and amplitude modulation. However, current active THz devices, including modulators and switches, still cannot meet THz system demands. Double-channel heterostructures, an alternative semiconductor system, can support nanoscale two-dimensional electron gases (2DEGs) with high carrier concentration and mobility and provide a new way to develop active THz devices. In this Letter, we present a composite metamaterial structure that combines an equivalent collective dipolar array with a double-channel heterostructure to obtain an effective, ultrafast, and all-electronic grid-controlled THz modulator. Electrical control allows for resonant mode conversion between two different dipolar resonances in the active device, which significantly improves the modulation speed and depth. This THz modulator is the first to achieve a 1 GHz modulation speed and 85% modulation depth during real-time dynamic tests. Moreover, a 1.19 rad phase shift was realized. A wireless free-space-modulation THz communication system based on this external THz modulator was tested using 0.2 Gbps eye patterns. Therefore, this active composite metamaterial modulator provides a basis for the development of effective and ultrafast dynamic devices for THz wireless communication and imaging systems.

  18. Efficient Nitrogen Doping of Single-Layer Graphene Accompanied by Negligible Defect Generation for Integration into Hybrid Semiconductor Heterostructures.

    PubMed

    Sarau, George; Heilmann, Martin; Bashouti, Muhammad; Latzel, Michael; Tessarek, Christian; Christiansen, Silke

    2017-03-22

    While doping enables application-specific tailoring of graphene properties, it can also produce high defect densities that degrade the beneficial features. In this work, we report efficient nitrogen doping of ∼11 atom % without virtually inducing new structural defects in the initial, large-area, low defect, and transferred single-layer graphene. To shed light on this remarkable high-doping-low-disorder relationship, a unique experimental strategy consisting of analyzing the changes in doping, strain, and defect density after each important step during the doping procedure was employed. Complementary micro-Raman mapping, X-ray photoelectron spectroscopy, and optical microscopy revealed that effective cleaning of the graphene surface assists efficient nitrogen incorporation accompanied by mild compressive strain resulting in negligible defect formation in the doped graphene lattice. These original results are achieved by separating the growth of graphene from its doping. Moreover, the high doping level occurred simultaneously with the epitaxial growth of n-GaN micro- and nanorods on top of graphene, leading to the flow of higher currents through the graphene/n-GaN rod interface. Our approach can be extended toward integrating graphene into other technologically relevant hybrid semiconductor heterostructures and obtaining an ohmic contact at their interfaces by adjusting the doping level in graphene.

  19. Electric-field-modulated nonvolatile resistance switching in VO₂/PMN-PT(111) heterostructures.

    PubMed

    Zhi, Bowen; Gao, Guanyin; Xu, Haoran; Chen, Feng; Tan, Xuelian; Chen, Pingfan; Wang, Lingfei; Wu, Wenbin

    2014-04-09

    The electric-field-modulated resistance switching in VO2 thin films grown on piezoelectric (111)-0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 (PMN-PT) substrates has been investigated. Large relative change in resistance (10.7%) was observed in VO2/PMN-PT(111) hererostructures at room temperature. For a substrate with a given polarization direction, stable resistive states of VO2 films can be realized even when the applied electric fields are removed from the heterostructures. By sweeping electric fields across the heterostructure appropriately, multiple resistive states can be achieved. These stable resistive states result from the different stable remnant strain states of substrate, which is related to the rearrangements of ferroelectric domain structures in PMN-PT(111) substrate. The resistance switching tuned by electric field in our work may have potential applications for novel electronic devices.

  20. Film size-dependent voltage-modulated magnetism in multiferroic heterostructures

    PubMed Central

    Hu, J.-M.; Shu, L.; Li, Z.; Gao, Y.; Shen, Y.; Lin, Y. H.; Chen, L. Q.; Nan, C. W.

    2014-01-01

    The electric-voltage-modulated magnetism in multiferroic heterostructures, also known as the converse magnetoelectric (ME) coupling, has drawn increasing research interest recently owing to its great potential applications in future low-power, high-speed electronic and/or spintronic devices, such as magnetic memory and computer logic. In this article, based on combined theoretical analysis and experimental demonstration, we investigate the film size dependence of such converse ME coupling in multiferroic magnetic/ferroelectric heterostructures, as well as exploring the interaction between two relating coupling mechanisms that are the interfacial strain and possibly the charge effects. We also briefly discuss some issues for the next step and describe new device prototypes that can be enabled by this technology. PMID:24421375

  1. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K.; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J.; Kalinin, Sergei V.; Lai, Keji; Demkov, Alexander A.

    2015-01-14

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  2. An analysis of doping modulated superlattice structures

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.

    1985-01-01

    A new method of growing doping modulated superlattice structures is discussed. This method uses organo-metallic chemical vapor deposition (MO-CVD) with the added feature of controlled plasma in the growth regions. The main objective was to study how the growth environment affected the electronic and optical properties of the superlattice structures. Because a serious safety hazard was discovered in the growth process, no superlattice structures were fabricated and the research on this material had to be terminated. The hazard had to do with the lack of adequate means for the disposal of toxic elemental beryllium.

  3. Characterization of iron doped indium phosphide as a current blocking layer in buried heterostructure quantum cascade lasers

    NASA Astrophysics Data System (ADS)

    Nida, S.; Hinkov, B.; Gini, E.; Faist, J.

    2017-03-01

    This work analyzes transport through metal organic chemical vapour deposition grown Iron doped Indium Phosphide (InP:Fe) for use as a current blocking layer in buried heterostructure Quantum Cascade Lasers. The nature of Iron incorporation in InP and electrical transport properties of InP:Fe is investigated via simulation and compared with measurement. Through simulations, we are able to predict the threshold for the onset of current rise in test structures due to avalanche injection of carriers. In addition, the benefit of InAlAs barriers inserted in InP:Fe layers is investigated and found to reduce the leakage current at lower biases while delaying the onset of avalanche. In buried heterostructure configuration, we have determined that non ideal regrowth profiles make the structure more susceptible to high field effects such as avalanche injection and trap filling that induce leakage currents.

  4. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    DOE PAGES

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; ...

    2015-01-14

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-lossmore » spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.« less

  5. Impulse voltage control of continuously tunable bipolar resistive switching in Pt/Bi0.9Eu0.1FeO3/Nb-doped SrTiO3 heterostructures

    NASA Astrophysics Data System (ADS)

    Wei, Maocai; Liu, Meifeng; Wang, Xiuzhang; Li, Meiya; Zhu, Yongdan; Zhao, Meng; Zhang, Feng; Xie, Shuai; Hu, Zhongqiang; Liu, Jun-Ming

    2017-03-01

    Epitaxial Bi0.9Eu0.1FeO3 (BEFO) thin films are deposited on Nb-doped SrTiO3 (NSTO) substrates by pulsed laser deposition to fabricate the Pt/BEFO/NSTO (001) heterostructures. These heterostructures possess bipolar resistive switching, where the resistances versus writing voltage exhibits a distinct hysteresis loop and a memristive behavior with good retention and anti-fatigue characteristics. The local resistive switching is confirmed by the conductive atomic force microscopy (C-AFM), suggesting the possibility to scale down the memory cell size. The observed memristive behavior could be attributed to the ferroelectric polarization effect, which modulates the height of potential barrier and width of depletion region at the BEFO/NSTO interface. The continuously tunable resistive switching behavior could be useful to achieve non-volatile, high-density, multilevel random access memory with low energy consumption.

  6. Electro-optical modulator in a polymerinfiltrated silicon slotted photonic crystal waveguide heterostructure resonator.

    PubMed

    Wülbern, Jan Hendrik; Petrov, Alexander; Eich, Manfred

    2009-01-05

    We present a novel concept of a compact, ultra fast electro-optic modulator, based on photonic crystal resonator structures that can be realized in two dimensional photonic crystal slabs of silicon as core material employing a nonlinear optical polymer as infiltration and cladding material. The novel concept is to combine a photonic crystal heterostructure cavity with a slotted defect waveguide. The photonic crystal lattice can be used as a distributed electrode for the application of a modulation signal. An electrical contact is hence provided while the optical wave is kept isolated from the lossy metal electrodes. Thereby, well known disadvantages of segmented electrode designs such as excessive scattering are avoided. The optical field enhancement in the slotted region increases the nonlinear interaction with an external electric field resulting in an envisaged switching voltage of approximately 1 V at modulation speeds up to 100 GHz.

  7. LASERS: High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AlGaAs heterostructures

    NASA Astrophysics Data System (ADS)

    Davydova, Evgeniya I.; Ladugin, M. A.; Marmalyuk, Aleksandr A.; Padalitsa, A. A.; Petrovskii, A. V.; Sukharev, A. V.; Uspenskii, Mikhail B.; Shishkin, Viktor A.

    2009-01-01

    Emission parameters of single-mode laser diodes based on InGaAs/GaAs/AlGaAs heterostructures doped with carbon and grown by using the metallorganic vapour phase epitaxy (MOVPE) technique are studied. The obtained results show that maintaining a certain doping profile ensuring optimisation of series resistance and internal optical losses during all fabrication stages of the active element of a diode laser, provides for enhancement of the laser efficiency. Based on laser heterostructures studied in this paper, highly efficient single-transverse-mode laser diodes emitting 300 mW at 980 nm have been manufactured.

  8. Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing δ-doped layers

    SciTech Connect

    Khazanova, S. V. Degtyarev, V. E.; Tikhov, S. V.; Baidus, N. V.

    2015-01-15

    InGaAs/GaAs heterostructures containing quantum wells and δ-doped layers are studied theoretically and experimentally. On the basis of the procedure of self-consistently solving the Schrödinger equation and Poisson equation, the differential capacitance and the apparent electron concentration profiles are numerically calculated for structures with different mutual arrangements of the quantum well and the δ layer. The results of the calculations are compared with the result of analyzing the experimental capacitance-voltage characteristics of the structures. The systematic features of the behavior of the apparent concentration profiles and capacitance-voltage characteristics in relation to the geometric properties of the structure, the temperature, and the doping level are established.

  9. ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity

    NASA Astrophysics Data System (ADS)

    Lu, Yanghua; Wu, Zhiqian; Xu, Wenli; Lin, Shisheng

    2016-12-01

    A ZnO quantum dot photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W-1 and detectivity of more than 1.02 × 1013 Jones (Jones = cm Hz1/2 W-1) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W-1 to 1915 A W-1 and the detectivity is improved from 5.8 × 1012 to 1.0 × 1013 Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.

  10. Tuning on-off current ratio and field-effect mobility in a MoS(2)-graphene heterostructure via Schottky barrier modulation.

    PubMed

    Shih, Chih-Jen; Wang, Qing Hua; Son, Youngwoo; Jin, Zhong; Blankschtein, Daniel; Strano, Michael S

    2014-06-24

    Field-effect transistor (FET) devices composed of a MoS2-graphene heterostructure can combine the advantages of high carrier mobility in graphene with the permanent band gap of MoS2 for digital applications. Herein, we investigate the electron transfer, photoluminescence, and gate-controlled carrier transport in such a heterostructure. We show that the junction is a Schottky barrier, whose height can be artificially controlled by gating or doping graphene. When the applied gate voltage (or the doping level) is zero, the photoexcited electron-hole pairs in monolayer MoS2 can be split by the heterojunction, significantly reducing the photoluminescence. By applying negative gate voltage (or p-doping) in graphene, the interlayer impedance formed between MoS2 and graphene exhibits an 100-fold increase. For the first time, we show that the gate-controlled interlayer Schottky impedance can be utilized to modulate carrier transport in graphene, significantly depleting the hole transport, but preserving the electron transport. Accordingly, we demonstrate a new type of FET device, which enables a controllable transition from NMOS digital to bipolar characteristics. In the NMOS digital regime, we report a very high room temperature on/off current ratio (ION/IOFF ∼ 36) in comparison to graphene-based FET devices without sacrificing the field-effect electron mobilities in graphene. By engineering the source/drain contact area, we further estimate that a higher value of ION/IOFF up to 100 can be obtained in the device architecture considered. The device architecture presented here may enable semiconducting behavior in graphene for digital and analogue electronics.

  11. Polarization-dependent interfacial coupling modulation of ferroelectric photovoltaic effect in PZT-ZnO heterostructures

    NASA Astrophysics Data System (ADS)

    Pan, Dan-Feng; Bi, Gui-Feng; Chen, Guang-Yi; Zhang, Hao; Liu, Jun-Ming; Wang, Guang-Hou; Wan, Jian-Guo

    2016-03-01

    Recently, ferroelectric perovskite oxides have drawn much attention due to potential applications in the field of solar energy conversion. However, the power conversion efficiency of ferroelectric photovoltaic effect currently reported is far below the expectable value. One of the crucial problems lies in the two back-to-back Schottky barriers, which are formed at the ferroelectric-electrode interfaces and blocking most of photo-generated carriers to reach the outside circuit. Herein, we develop a new approach to enhance the ferroelectric photovoltaic effect by introducing the polarization-dependent interfacial coupling effect. Through inserting a semiconductor ZnO layer with spontaneous polarization into the ferroelectric ITO/PZT/Au film, a p-n junction with strong polarization-dependent interfacial coupling effect is formed. The power conversion efficiency of the heterostructure is improved by nearly two orders of magnitude and the polarization modulation ratio is increased about four times. It is demonstrated that the polarization-dependent interfacial coupling effect can give rise to a great change in band structure of the heterostructure, not only producing an aligned internal electric field but also tuning both depletion layer width and potential barrier height at PZT-ZnO interface. This work provides an efficient way in developing highly efficient ferroelectric-based solar cells and novel optoelectronic memory devices.

  12. Polarization-dependent interfacial coupling modulation of ferroelectric photovoltaic effect in PZT-ZnO heterostructures.

    PubMed

    Pan, Dan-Feng; Bi, Gui-Feng; Chen, Guang-Yi; Zhang, Hao; Liu, Jun-Ming; Wang, Guang-Hou; Wan, Jian-Guo

    2016-03-08

    Recently, ferroelectric perovskite oxides have drawn much attention due to potential applications in the field of solar energy conversion. However, the power conversion efficiency of ferroelectric photovoltaic effect currently reported is far below the expectable value. One of the crucial problems lies in the two back-to-back Schottky barriers, which are formed at the ferroelectric-electrode interfaces and blocking most of photo-generated carriers to reach the outside circuit. Herein, we develop a new approach to enhance the ferroelectric photovoltaic effect by introducing the polarization-dependent interfacial coupling effect. Through inserting a semiconductor ZnO layer with spontaneous polarization into the ferroelectric ITO/PZT/Au film, a p-n junction with strong polarization-dependent interfacial coupling effect is formed. The power conversion efficiency of the heterostructure is improved by nearly two orders of magnitude and the polarization modulation ratio is increased about four times. It is demonstrated that the polarization-dependent interfacial coupling effect can give rise to a great change in band structure of the heterostructure, not only producing an aligned internal electric field but also tuning both depletion layer width and potential barrier height at PZT-ZnO interface. This work provides an efficient way in developing highly efficient ferroelectric-based solar cells and novel optoelectronic memory devices.

  13. Polarization-dependent interfacial coupling modulation of ferroelectric photovoltaic effect in PZT-ZnO heterostructures

    PubMed Central

    Pan, Dan-Feng; Bi, Gui-Feng; Chen, Guang-Yi; Zhang, Hao; Liu, Jun-Ming; Wang, Guang-Hou; Wan, Jian-Guo

    2016-01-01

    Recently, ferroelectric perovskite oxides have drawn much attention due to potential applications in the field of solar energy conversion. However, the power conversion efficiency of ferroelectric photovoltaic effect currently reported is far below the expectable value. One of the crucial problems lies in the two back-to-back Schottky barriers, which are formed at the ferroelectric-electrode interfaces and blocking most of photo-generated carriers to reach the outside circuit. Herein, we develop a new approach to enhance the ferroelectric photovoltaic effect by introducing the polarization-dependent interfacial coupling effect. Through inserting a semiconductor ZnO layer with spontaneous polarization into the ferroelectric ITO/PZT/Au film, a p-n junction with strong polarization-dependent interfacial coupling effect is formed. The power conversion efficiency of the heterostructure is improved by nearly two orders of magnitude and the polarization modulation ratio is increased about four times. It is demonstrated that the polarization-dependent interfacial coupling effect can give rise to a great change in band structure of the heterostructure, not only producing an aligned internal electric field but also tuning both depletion layer width and potential barrier height at PZT-ZnO interface. This work provides an efficient way in developing highly efficient ferroelectric-based solar cells and novel optoelectronic memory devices. PMID:26954833

  14. Quantum anomalous Hall effect in magnetically modulated topological insulator/normal insulator heterostructures

    NASA Astrophysics Data System (ADS)

    Men'shov, V. N.; Tugushev, V. V.; Chulkov, E. V.

    2016-10-01

    We theoretically study how magnetic modulation can be used to manipulate the transport properties of heterostructures formed by a thin film of a three-dimensional topological insulator sandwiched between slabs of a normal insulator. Employing the k • p scheme, in the framework of a continual approach, we argue that electron states of the system are spin-polarized when ultrathin magnetic insertions are incorporated into the film. We demonstrate that (i) the spin-polarization magnitude depends strongly on the magnetic insertion position in the film and (ii) there is the optimal insertion position to realize quantum anomalous Hall effect, which is a function of the material parameters, the film thickness and the topological insulator/normal insulator interface potential. For the heterostructure with a pair of symmetrically placed magnetic insertions, we calculate a phase diagram that shows a series of transitions between distinct quantum regimes of transverse conductivity. We provide consistent interpretation of recent experimental findings in the context of our results.

  15. All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures

    NASA Astrophysics Data System (ADS)

    Podoskin, A. A.; Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S.

    2017-01-01

    All-optical cells based on AlGaAs/GaAs/InGaAs laser heterostructures for a 905-nm wavelength have been developed, which operate in the regime of optical-power modulation by means of controlled generation switching between the Fabry-Perot cavity modes and high-Q closed mode. At a modulated power of 1.6 W, a mode-switching time of 1.2 ns and smaller is achieved.

  16. Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors

    NASA Astrophysics Data System (ADS)

    Cui, Delong; Hubbard, Seth M.; Pavlidis, Dimitris; Eisenbach, Andreas; Chelli, Cyril

    2002-06-01

    The impact of doping and metalorganic chemical vapour deposition growth conditions on the minority carrier lifetime of zinc- and carbon-doped InGaAs is reported. Room temperature photoluminescence measurements have been employed to obtain direct information on the non-radiative lifetime of the materials. Low growth temperature and low V/III ratio lead to the lower carrier lifetime of the carbon-doped InGaAs samples. InP/InGaAs heterostructure bipolar transistors were grown and fabricated using both zinc- and carbon-doped InGaAs layers as the base regions. The current gain values measured for these devices agree well with the values calculated from the carrier lifetime and mobility/diffusion coefficient measurements.

  17. Full solution-processed synthesis of all metal oxide-based tree-like heterostructures on fluorine-doped tin oxide for water splitting.

    PubMed

    Yin, Zongyou; Wang, Zheng; Du, Yaping; Qi, Xiaoying; Huang, Yizhong; Xue, Can; Zhang, Hua

    2012-10-09

    Well-ordered tree-like functional heterostructures, composed of the environmentally friendly oxides ZnO, TiO(2) , and CuO, on a fluorine-doped tin oxide substrate are realized by a practical, cost-effective, solution-processable strategy. The heterostructures are demonstrated to be an efficient light-harvesting medium in a photo-electrochemical cell to split water for hydrogen-gas generation, and the developed strategy provides a highly promising, cheap, green way to fabricate multifunctional hierarchically branched structures for many potential applications.

  18. Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

    SciTech Connect

    Pooth, Alexander; Uren, Michael J.; Cäsar, Markus; Kuball, Martin; Martin, Trevor

    2015-12-07

    Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs.

  19. Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers

    SciTech Connect

    Gulyaev, D. V. Zhuravlev, K. S.; Bakarov, A. K.; Toropov, A. I.

    2015-02-15

    The photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistor heterostructures with donor-acceptor-doped AlGaAs barriers is studied. It is found that the introduction of additional p{sup +}-doped AlGaAs layers into the design brings about the appearance of new bands in the photoluminescence spectra. These bands are identified as resulting from transitions (i) in donor-acceptor pairs in doped AlGaAs layers and (ii) between the conduction subband and acceptor levels in the undoped InGaAs quantum well.

  20. Negative residual infrared photoconduction in the p-SiGe/Si heterostructures with selectively doped quantum wells

    NASA Astrophysics Data System (ADS)

    Gudenko, Yu. N.; Vainberg, V. V.; Vasetskii, V. M.; Poroshin, V. N.; Sarbey, O. G.; Chirchik, S. V.

    2012-10-01

    In the p-Si0.88Ge0.12/Si heterostructures with quantum wells delta-doped by boron, the decay kinetics of the lateral infrared photoconduction has been studied at low temperatures (15 to 50 K). Photoconduction was excited in the impurity spectral range by a CO2-laser pulse radiation. After switching off the light, both positive and negative residual photoconductions are observed. It is positive at low temperatures, but it changes to the negative one at T > 25 K. The higher the temperature and electric field are, the faster is the decay of the negative residual photoconduction. Qualitative explanation and quantitative description of the photoconduction relaxation take into account the competition between the recombination of free holes on the impurity levels and their thermal excitation from barrier traps into subbands of the quantum well. If the recombination time is much smaller than the excitation time from the traps, the negative residual photoconduction appears.

  1. Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures

    SciTech Connect

    Vasil'evskii, I. S. Galiev, G. B.; Klimov, E. A.; Pozela, K.; Pozela, J.; Juciene, V.; Suziedelis, A.; Zurauskiene, N.; Kersulis, S.; Stankevic, V.

    2011-09-15

    An increase in the electron mobility and drift velocity in high electric fields in quantum wells of selectively doped InAlAs/InGaAs/InAsAs heterostructures is obtained experimentally via controlling the composition of semiconductors forming the interface. The electron mobility at the interface in the In{sub 0.8}Ga{sub 0.2}As/In{sub 0.7}Al{sub 0.3}As metamorphic structure with a high molar fraction of In (0.7-0.8) is as high as 12.3 Multiplication-Sign 10{sup 3} cm{sup 2} V{sup -1} s{sup -1} at room temperature. An increase in the electron mobility by a factor of 1.1-1.4 is attained upon the introduction of thin (1-3 nm) InAs layers into a quantum well of selectively doped In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterostructures. A maximal drift velocity attains 2.5 Multiplication-Sign 10{sup 7} cm/s in electric fields of 2-5 kV/cm. The threshold field F{sub th} for the intervalley {Gamma}-L electron transfer (the Gunn effect) in the InGaAs quantum well is higher than in the bulk material by a factor of 2.5-3. The effect of two- to threefold decrease in the threshold field F{sub th} in the InGaAs quantum well is established upon increasing the molar fraction of In in the InAlAs barrier, as well as upon the introduction of thin InAs inserts into the InGaAs quantum well.

  2. La-doped BaTiO{sub 3} heterostructures: Compensating the polarization discontinuity

    SciTech Connect

    Kumah, D. P.; Clarke, R.; Yacoby, Y.; Pauli, S. A.; Willmott, P. R.

    2013-12-01

    We demonstrate a route to manipulate the polarization and internal electric field of a complex oxide heterostructure using a layering sequence based on the LaAlO{sub 3}-SrTiO{sub 3} interface. By combining sensitive atomic-level mapping of the structure using direct x-ray phase-retrieval methods with theoretical modeling of the electrostatic charge and polarization, we have devised a novel single-domain polar heterostructure. We find that ionic rearrangement results in strain and free energy minimization, and eliminates the polarization discontinuity leading to a two-fold increase of the spontaneous polarization towards the surface of an ultra-thin single-domain BaTiO{sub 3} film.

  3. ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity.

    PubMed

    Lu, Yanghua; Wu, Zhiqian; Xu, Wenli; Lin, Shisheng

    2016-12-02

    A ZnO quantum dot  photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W(-1) and detectivity of more than 1.02 × 10(13) Jones (Jones = cm Hz(1/2) W(-1)) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W(-1) to 1915 A W(-1) and the detectivity is improved from 5.8 × 10(12) to 1.0 × 10(13) Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.

  4. Transport in two-dimensional modulation-doped semiconductor structures

    NASA Astrophysics Data System (ADS)

    Das Sarma, S.; Hwang, E. H.; Kodiyalam, S.; Pfeiffer, L. N.; West, K. W.

    2015-05-01

    We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the remote ionized dopants, which must invariably be present in order to create the 2D electron gas at the GaAs-AlGaAs interface. The minimal model, assuming first-order Born scattering by random quenched remote dopant ions as the only scattering mechanism, gives a mobility much lower (by a factor of 3 or more) than that observed experimentally in many ultrahigh-mobility modulation-doped 2D systems, establishing convincingly that the model of uncorrelated scattering by independent random remote quenched dopant ions is often unable to describe the physical system quantitively. We theoretically establish that the consideration of spatial correlations in the remote dopant distribution can enhance the mobility by (up to) several orders of magnitudes in experimental samples. The precise calculation of the carrier mobility in ultrapure modulation-doped 2D semiconductor structures thus depends crucially on the unknown spatial correlations among the dopant ions in the doping layer which may manifest sample to sample variations even for nominally identical sample parameters (i.e., density, well width, etc.), depending on the details of the modulation-doping growth conditions.

  5. Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures.

    PubMed

    Simon, John; Protasenko, Vladimir; Lian, Chuanxin; Xing, Huili; Jena, Debdeep

    2010-01-01

    Impurity-based p-type doping in wide-band-gap semiconductors is inefficient at room temperature for applications such as lasers because the positive-charge carriers (holes) have a large thermal activation energy. We demonstrate high-efficiency p-type doping by ionizing acceptor dopants using the built-in electronic polarization in bulk uniaxial semiconductor crystals. Because the mobile hole gases are field-ionized, they are robust to thermal freezeout effects and lead to major improvements in p-type electrical conductivity. The new doping technique results in improved optical emission efficiency in prototype ultraviolet light-emitting-diode structures. Polarization-induced doping provides an attractive solution to both p- and n-type doping problems in wide-band-gap semiconductors and offers an unconventional path for the development of solid-state deep-ultraviolet optoelectronic devices and wide-band-gap bipolar electronic devices of the future.

  6. Anisotropic transport in modulation doped quantum well structures

    NASA Technical Reports Server (NTRS)

    Radulescu, D. C.; Wicks, G. W.; Schaff, W. J.; Calawa, A. R.; Eastman, L. F.

    1987-01-01

    The degree of anisotropy in the anisotropic electron transport that has been observed in GaAs modulation-doped quantum wells grown by MBE on Al(0.3)Ga(0.7)As is related to the thickness and growth parameters of this substrate, which is grown just prior to the inverted interface. It is presently observed that the inverted interface has an anisotropic roughness which affects the 77 K low field electron transport parallel to the interface, and gives rise to anisotropic electron scattering in the GaAs modulation-doped quantum well.

  7. Bolometric detection of magnetoplasma resonances in microwave absorption by two-dimensional electron systems based on doping layer conductivity measurements in GaAs/AlGaAs heterostructures

    SciTech Connect

    Dorozhkin, S. I. Sychev, D. V.; Kapustin, A. A.

    2014-11-28

    We have implemented a new bolometric method to detect resonances in magneto-absorption of microwave radiation by two-dimensional electron systems (2DES) in selectively doped GaAs/AlGaAs heterostructures. Radiation is absorbed by the 2DES and the thermally activated conductivity of the doping layer supplying electrons to the 2DES serves as a thermometer. The resonant absorption brought about by excitation of the confined magnetoplasma modes appears as peaks in the magnetic field dependence of the low-frequency impedance measured between the Schottky gate and 2DES.

  8. Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O3/Nb:SrTiO3 Heterostructures.

    PubMed

    Bai, Yu; Wang, Zhan Jie; Chen, Yan Na; Cui, Jian Zhong

    2016-12-07

    In this work, epitaxial Pb(Zr0.4Ti0.6)O3 (PZT) thin films with different thicknesses were deposited on Nb-doped SrTiO3 (NSTO) single-crystal substrates by chemical solution deposition (CSD), and their ferroelectric resistive switching behaviors were investigated. The results showed that the maximum ON/OFF ratio up to 850 could be obtained in the PZT/NSTO heterostructure with the 150 nm thick PZT film. On the basis of the Schottky-Simmons model and the modified semiconductor theory, we also evaluated the interfacial built-in field and the depletion layer at the PZT/NSTO interface, which can be modulated strongly by the ferroelectric polarization, but are independent of the thickness of the PZT thin films. It is clear that the ferroelectric resistive switching is related to the ferroelectric polarization and modulated by the thickness of ferroelectric films. Therefore, there is an optimal thickness of the PZT film for the maximum ON/OFF ratio due to the ferroelectricity and conductivity mutually restricting. It can be expected that by adjusting the ferroelectricity and conductivity of the ferroelectric thin film and its thickness, the maximum switching ratio can be further improved.

  9. Study of resistive switching and magnetism modulation in the Pt/CoFe2O4/Nb:SrTiO3 heterostructures

    NASA Astrophysics Data System (ADS)

    Wang, Qiangwen; Zhu, Yongdan; Liu, Xiaolian; Zhao, Meng; Wei, Maocai; Zhang, Feng; Zhang, Yuan; Sun, Beilei; Li, Meiya

    2015-08-01

    CoFe2O4 (CFO) thin films are epitaxially grown on Nb doped (001) SrTiO3 (NSTO) single-crystal substrates by pulsed laser deposition to form Pt/CFO/NSTO heterostructures. These heterostructures exhibit typical bipolar resistive switching effect with maximum switching ratio of 5 × 104, multi-level resistance states, excellent retention, and anti-fatigue properties. When the resistance states of the heterostructures are switched between low resistance state and high resistance state upon applying bias voltages, the saturation magnetization of the CFO films shows corresponding changes associated with the resistive switching. These close correlations between the resistive switching and the magnetization can be attributed to the electrons filling into and releasing from the defect energy levels introduced by oxygen vacancies in the CFO film. These results show potential application in the multi-functional magnetoelectric sensor and non-volatile multi-level resistive switching memory.

  10. Large current modulation and spin-dependent tunneling of vertical graphene/MoS2 heterostructures.

    PubMed

    Myoung, Nojoon; Seo, Kyungchul; Lee, Seung Joo; Ihm, G

    2013-08-27

    Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different heights of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene.

  11. Photovoltaic response in pristine WSe{sub 2} layers modulated by metal-induced surface-charge-transfer doping

    SciTech Connect

    Wi, Sungjin; Chen, Mikai; Li, Da; Nam, Hongsuk; Meyhofer, Edgar; Liang, Xiaogan

    2015-08-10

    We obtained photovoltaic response in pristine multilayer WSe{sub 2} by sandwiching WSe{sub 2} between top and bottom metals. In this structure, the work-function difference between the top metal and WSe{sub 2} plays a critical role in generating built-in potentials and photovoltaic responses. Our devices with Zn as top metal exhibit photo-conversion efficiencies up to 6.7% under 532 nm illumination and external quantum efficiencies in the range of 40%–83% for visible light. This work provides a method for generating photovoltaic responses in layered semiconductors without detrimental doping or exquisite heterostructures, and also advances the physics for modulating the band structures of such emerging semiconductors.

  12. Effect of boron doping on the rectification effect and photovoltaic performance of CdS/Si heterostructure based on Si nanoporous pillar array

    NASA Astrophysics Data System (ADS)

    Yan, Ling Ling; Wang, Xiao Bo; Liu, Wei Kang; Li, Xin Jian

    2015-07-01

    A series of CdS/Si heterostructures were prepared through growing B-doped CdS thin films on silicon nanoporous pillar array (Si-NPA) by a chemical bath deposition (CBD) method. The experimental data show that B-doping concentration of CdS thin films could be tuned effectively through controlling the mole ratio of [B]/[Cd] of the initial CBD solution without causing obvious variation of the crystal phase and surface morphology of CdS/Si-NPA. Both the electrical rectification and photovoltaic parameters of CdS/Si-NPA show strong dependence upon B-doping concentration, and the optimal characteristics are achieved for the samples prepared with [B]/[Cd] = 0.01. Compared with CdS/Si-NPA solar cells without B-doping, an increment over 300 times for energy conversion efficiency is realized. The mechanism for the efficiency increment is analyzed based on the effect of B-doping on the band structure of CdS/Si-NPA. These results indicate that B-doping might be an effective path for promoting the device performance of solar cells based on CdS/Si-NPA.

  13. Mixed Carrier Conduction in Modulation-doped Field Effect Transistors

    NASA Technical Reports Server (NTRS)

    Schacham, S. E.; Haugland, E. J.; Mena, R. A.; Alterovitz, S. A.

    1995-01-01

    The contribution of more than one carrier to the conductivity in modulation-doped field effect transistors (MODFET) affects the resultant mobility and complicates the characterization of these devices. Mixed conduction arises from the population of several subbands in the two-dimensional electron gas (2DEG), as well as the presence of a parallel path outside the 2DEG. We characterized GaAs/AlGaAs MODFET structures with both delta and continuous doping in the barrier. Based on simultaneous Hall and conductivity analysis we conclude that the parallel conduction is taking place in the AlGaAs barrier, as indicated by the carrier freezeout and activation energy. Thus, simple Hall analysis of these structures may lead to erroneous conclusions, particularly for real-life device structures. The distribution of the 2D electrons between the various confined subbands depends on the doping profile. While for a continuously doped barrier the Shubnikov-de Haas analysis shows superposition of two frequencies for concentrations below 10(exp 12) cm(exp -2), for a delta doped structure the superposition is absent even at 50% larger concentrations. This result is confirmed by self-consistent analysis, which indicates that the concentration of the second subband hardly increases.

  14. Visible-light-driven photoelectrochemical and photocatalytic performances of Cr-doped SrTiO3/TiO2 heterostructured nanotube arrays.

    PubMed

    Jiao, Zhengbo; Chen, Tao; Xiong, Jinyan; Wang, Teng; Lu, Gongxuan; Ye, Jinhua; Bi, Yingpu

    2013-01-01

    Well-aligned TiO2 nanotube arrays have become of increasing significance because of their unique highly ordered array structure, high specific surface area, unidirectional charge transfer and transportation features. However, their poor visible light utilization as well as the high recombination rate of photoexcited electron-hole pairs greatly limited their practical applications. Herein, we demonstrate the fabrication of visible-light-responsive heterostructured Cr-doped SrTiO3/TiO2 nanotube arrays by a simple hydrothermal method, which facilitate efficient charge separation and thus improve the photoelectrochemical as well as photocatalytic performances.

  15. The unconventional doping in YBa2Cu3O7-x/La0.7Ca0.3MnO3 heterostructures by termination control

    NASA Astrophysics Data System (ADS)

    Tra, V. T.; Huang, R.; Gao, X.; Chen, Y.-J.; Liu, Y. T.; Kuo, W. C.; Chin, Y. Y.; Lin, H. J.; Chen, J. M.; Lee, J. M.; Lee, J. F.; Shi, P. S.; Jiang, M. G.; Duan, C. G.; Juang, J. Y.; Chen, C. T.; Jeng, H. T.; He, Q.; Chuang, Y.-D.; Lin, J.-Y.; Chu, Y.-H.

    2017-01-01

    In strongly correlated oxides, heterostructures provide a powerful route to manipulate the charge, spin, orbital, and lattice degrees of freedom to create distinctive functionalities. In this work, we have achieved atomically precise interface control in YBa2Cu3O7-x/La0.7Ca0.3MnO3 (YBCO/LCMO) heterostructures and find a hidden effective doping. This mechanism is responsible for higher Tc in the sample with the MnO2-terminated interface than in that with the La0.7Ca0.3O-terminated interface. The MnO2-terminated sample also shows a larger magnetic moment of Mn together with a lower valence state. For more than a decade, the control of Tc in these heterostructures prior to this work has been solely via the variation of YBCO or LCMO thickness. This work hints at an alternative way of exploiting and exploring the interactions between superconductivity and magnetism in this system.

  16. Toward an Understanding of the Electric Field-Induced Electrostatic Doping in van der Waals Heterostructures: A First-Principles Study.

    PubMed

    Lu, Anh Khoa Augustin; Houssa, Michel; Radu, Iuliana P; Pourtois, Geoffrey

    2017-03-01

    Since the discovery of graphene, a broad range of two-dimensional (2D) materials has captured the attention of the scientific communities. Materials, such as hexagonal boron nitride (hBN) and the transition metal dichalcogenides (TMDs) family, have shown promising semiconducting and insulating properties that are very appealing for the semiconductor industry. Recently, the possibility of taking advantage of the properties of 2D-based heterostructures has been investigated for low-power nanoelectronic applications. In this work, we aim at evaluating the relation between the nature of the materials used in such heterostructures and the amplitude of the layer-to-layer charge transfer induced by an external electric field, as is typically present in nanoelectronic gated devices. A broad range of combinations of TMDs, graphene, and hBN has been investigated using density functional theory. Our results show that the electric field induced charge transfer strongly depends on the nature of the 2D materials used in the van der Waals heterostructures and to a lesser extent on the relative orientation of the materials in the structure. Our findings contribute to the building of the fundamental understanding required to engineer electrostatically the doping of 2D materials and to establish the factors that drive the charge transfer mechanisms in electron tunneling-based devices. These are key ingredients for the development of 2D-based nanoelectronic devices.

  17. Crystal-Orientation-Modulated Exchange Bias in Orthorhombic-YMnO3/La0.6Sr0.4MnO3 Multiferroic Heterostructures.

    PubMed

    Zheng, Dongxing; Gong, Junlu; Jin, Chao; Li, Peng; Bai, Haili

    2015-07-15

    The magnetic properties of the all-oxide multiferroic heterostructures composed of orthorhombic YMnO3 (YMO) with E-type antiferromagnetic and double-exchange ferromagnetic (FM) La0.6Sr0.4MnO3 (LSMO) were studied. An orientation-modulated exchange bias effect, which is related to the interfacial Mn-O-Mn bond angle, was discovered. Because of the large bond angle in YMO/LSMO(100) heterostructures, a strong exchange coupling at the interface is formed. This strong exchange coupling sustains an FM phase in YMO at the interface region. The FM phase with strong magnetocrystalline anisotropy contributes to the vertical shift and exchange bias effect in (100) orientation heterostructures. When LSMO (110) and (111) were layered with YMO, the Mn-O-Mn bond angle was reduced, leading to a weakened exchange coupling at the interface, and only a relatively small exchange bias at low temperatures was visible.

  18. Chemical sensing by band modulation of a black phosphorus/molybdenum diselenide van der Waals hetero-structure

    NASA Astrophysics Data System (ADS)

    Feng, Zhihong; Chen, Buyun; Qian, Shuangbei; Xu, Linyan; Feng, Liefeng; Yu, Yuanyuan; Zhang, Rui; Chen, Jiancui; Li, Qianqian; Li, Quanning; Sun, Chongling; Zhang, Hao; Liu, Jing; Pang, Wei; Zhang, Daihua

    2016-09-01

    We report on a new chemical sensor based on black phosphorus/molybdenum diselenide van der Waals hetero-junctions. Due to the atomically thin nature of two-dimensional (2D) materials, surface adsorption of gas molecules can effectively modulate the band alignment at the junction interface, making the device a highly sensitive detector for chemical adsorptions. Compared to sensors made of homogeneous nanomaterials, the hetero-junction demonstrates considerably lower detection limit and higher sensitivity toward nitrogen dioxide. Kelvin probe force microscopy and finite element simulations have provided experimental and theoretical explanations for the enhanced performance, proving that chemical adsorption can induce significant changes in band alignment and carrier transport behaviors. The study demonstrates the potential of van der Waals hetero-junction as a new platform for sensing applications, and provides more insights into the interaction between gaseous molecules and 2D hetero-structures.

  19. Interface Energetics and Charge Carrier Density Amplification by Sn-Doping in LaAlO3/SrTiO3 Heterostructure.

    PubMed

    Nazir, Safdar; Cheng, Jianli; Behtash, Maziar; Luo, Jian; Yang, Kesong

    2015-07-08

    Tailoring the two-dimensional electron gas (2DEG) at the n-type (TiO2)(0)/(LaO)(+1) interface between the polar LaAlO3 (LAO) and nonpolar SrTiO3 (STO) insulators can potentially provide desired functionalities for next-generation low-dimensional nanoelectronic devices. Here, we propose a new approach to tune the electronic and magnetic properties in the n-type LAO/STO heterostructure (HS) system via electron doping. In this work, we modeled four types of layer doped LAO/STO HS systems with Sn dopants at different cation sites and studied their electronic structures and interface energetics by using first-principles electronic structure calculations. We identified the thermodynamic stability conditions for each of the four proposed doped configurations with respect to the undoped LAO/STO interface. We further found that the Sn-doped LAO/STO HS system with Sn at Al site (Sn@Al) is energetically most favorable with respect to decohesion, thereby strengthening the interface, while the doped HS system with Sn at La site (Sn@La) exhibits the lowest interfacial cohesion. Moreover, our results indicate that all the Sn-doped LAO/STO HS systems exhibit the n-type conductivity with the typical 2DEG characteristics except the Sn@La doped HS system, which shows p-type conductivity. In the Sn@Al doped HS model, the Sn dopant exists as a Sn(4+) ion and introduces one additional electron into the HS system, leading to a higher charge carrier density and larger magnetic moment than that of all the other doped HS systems. An enhanced charge confinement of the 2DEG along the c-axis is also found in the Sn@Al doped HS system. We hence suggest that Sn@Al doping can be an effective way to enhance the electrical conduction and magnetic moment of the 2DEG in LAO/STO HS systems in an energetically favorable manner.

  20. Delta-doping of Semiconductors

    NASA Astrophysics Data System (ADS)

    Schubert, E. F.

    2005-08-01

    Part I: 1. Introduction E. F. Schubert; Part II: 2. Electronic structure of delta-doped semiconductors C. R. Proetto; Part III: 3. Recent progress in delta-like confinement of impurities in GaAs K. H. Ploog; 4. Flow-rate modulation epitaxy (FME) of III-V semiconductors T. Makimoto and Y. Horikoshi; 5. Gas source molecular beam epitaxy (MBE) of delta-doped III-V semiconductors D. Ritter; 6. Solid phase epitaxy for delta-doping in silicon I. Eisele; 7. Low temperature MBE of silicon H.-J. Gossmann; Part IV: 8. Secondary ion mass spectrometry of delta-doped semiconductors H. S. Luftmann; 9. Capacitance-voltage profiling E. F. Schubert; 10. Redistribution of impurities in III-V semiconductors E. F. Schubert; 11. Dopant diffusion and segregation in delta-doped silicon films H.-J. Gossmann; 12. Characterisation of silicon and delta-doped structures in GaAs R. C. Newman; 13. The DX-center in silicon delta-doped GaAs and AlxGa1-xAs P. M. Koenraad; Part V: 14. Luminescence and ellipsometry spectroscopy H. Yao and E. F. Schubert; 15. Photoluminescence and Raman spectroscopy of single delta-doped III-V semiconductor heterostructures J. Wagner and D. Richards; 16. Electron transport in delta-doped quantum wells W. T. Masselink; 17. Electron mobility in delta-doped layers P. M. Koenraad; 18. Hot electrons in delta-doped GaAs M. Asche; 19. Ordered delta-doping R. L. Headrick, L. C. Feldman and B. E. Weir; Part IV: 20. Delta-doped channel III-V field effect transistors (FETs) W.-P. Hong; 21. Selectively doped heterostructure devices E. F. Schubert; 22. Silicon atomic layer doping FET K. Nakagawa and K. Yamaguchi; 23. Planar doped barrier devices R. J. Malik; 24. Silicon interband and intersubband photodetectors I. Eisele; 25. Doping superlattice devices E. F. Schubert.

  1. Spin-gapless and half-metallic ferromagnetism in potassium and calcium δ-doped GaN digital magnetic heterostructures for possible spintronic applications: insights from first principles

    NASA Astrophysics Data System (ADS)

    Du, Jiangtao; Dong, Shengjie; Zhou, Baozeng; Zhao, Hui; Feng, Liefeng

    2017-04-01

    The reports previously issued predominantly paid attention to the d-block magnetic elements δ-doped digital magnetic materials. In this work, GaN δ-doped with non-magnetic main group s-block elements K and Ca as digital magnetic heterostructures were purposed and explored theoretically. We found that K- and Ca-embedded GaN digital alloys exhibit spin-gapless and half-metallic ferromagnetic characteristics, respectively. All compounds obey the Slater-Pauling rule with diverse electronic and magnetic properties. For these digital ferromagnetic heterostructures, spin polarization occurs in nitrogen within a confined space around the δ-doped layer, demonstrating a hole-mediated two-dimensional magnetic phenomenon.

  2. Tailoring exchange couplings in magnetic topological-insulator/antiferromagnet heterostructures

    NASA Astrophysics Data System (ADS)

    He, Qing Lin; Kou, Xufeng; Grutter, Alexander J.; Yin, Gen; Pan, Lei; Che, Xiaoyu; Liu, Yuxiang; Nie, Tianxiao; Zhang, Bin; Disseler, Steven M.; Kirby, Brian J.; Ratcliff, William, II; Shao, Qiming; Murata, Koichi; Zhu, Xiaodan; Yu, Guoqiang; Fan, Yabin; Montazeri, Mohammad; Han, Xiaodong; Borchers, Julie A.; Wang, Kang L.

    2017-01-01

    Magnetic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures exhibiting Néel order in an antiferromagnetic CrSb and ferromagnetic order in Cr-doped (Bi,Sb)2Te3, we realize emergent interfacial magnetic phenomena which can be tailored through artificial structural engineering. Through deliberate geometrical design of heterostructures and superlattices, we demonstrate the use of antiferromagnetic exchange coupling in manipulating the magnetic properties of magnetic topological insulators. Proximity effects are shown to induce an interfacial spin texture modulation and establish an effective long-range exchange coupling mediated by antiferromagnetism, which significantly enhances the magnetic ordering temperature in the superlattice. This work provides a new framework on integrating topological insulators with antiferromagnetic materials and unveils new avenues towards dissipationless topological antiferromagnetic spintronics.

  3. Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

    SciTech Connect

    Verma, Jai Islam, S. M.; Protasenko, Vladimir; Kumar Kandaswamy, Prem; Xing, Huili; Jena, Debdeep

    2014-01-13

    Efficient semiconductor optical emitters in the deep-ultraviolet spectral window are encountering some of the most deep rooted problems of semiconductor physics. In III-Nitride heterostructures, obtaining short-wavelength photon emission requires the use of wide bandgap high Al composition AlGaN active regions. High conductivity electron (n-) and hole (p-) injection layers of even higher bandgaps are necessary for electrical carrier injection. This approach requires the activation of very deep dopants in very wide bandgap semiconductors, which is a difficult task. In this work, an approach is proposed and experimentally demonstrated to counter the challenges. The active region of the heterostructure light emitting diode uses ultrasmall epitaxially grown GaN quantum dots. Remarkably, the optical emission energy from GaN is pushed from 365 nm (3.4 eV, the bulk bandgap) to below 240 nm (>5.2 eV) because of extreme quantum confinement in the dots. This is possible because of the peculiar bandstructure and band alignments in the GaN/AlN system. This active region design crucially enables two further innovations for efficient carrier injection: Tunnel injection of carriers and polarization-induced p-type doping. The combination of these three advances results in major boosts in electroluminescence in deep-ultraviolet light emitting diodes and lays the groundwork for electrically pumped short-wavelength lasers.

  4. Color-tunable electroluminescence from Eu-doped TiO(2)/p(+)-Si heterostructured devices: engineering of energy transfer.

    PubMed

    Zhu, Chen; Lv, Chunyan; Wang, Canxing; Sha, Yiping; Li, Dongsheng; Ma, Xiangyang; Yang, Deren

    2015-02-09

    We report on color-tunable electroluminescence (EL) from TiO(2):Eu/p(+)-Si heterostructured devices using different TiO(2):Eu films in terms of Eu content and annealing temperature. It is found that the Eu-related emissions are activated by the energy transferred from TiO(2) host via oxygen vacancies, at the price of weakened oxygen-vacancy-related emissions. Both the higher Eu content and the higher annealing temperature for TiO(2):Eu films facilitate the aforementioned energy transfer. In this context, the dominant EL from the TiO(2):Eu/p(+)-Si heterostructured devices can be transformed from oxygen-vacancy-related emissions into Eu-related emissions with increasing Eu-content and annealing temperature for TiO(2):Eu films, exhibiting different colors of emanated light. We believe that this work sheds light on developing silicon-based red emitters using the Eu-doped oxide semiconductor films.

  5. Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts

    SciTech Connect

    Silenas, A.; Pozela, Yu. Pozela, K.; Juciene, V.; Vasil'evskii, I. S.; Galiev, G. B.; Pushkarev, S. S.; Klimov, E. A.

    2013-03-15

    The dependence of the electron mobility and drift velocity on the growth conditions, thickness, and doping of an InAs insert placed at the center of the quantum well in a selectively doped InAlAs/InGaAs/InAlAs heterostructure has been investigated. Record enhancement of the maximum drift velocity to (2-4) Multiplication-Sign 10{sup 7} cm/s in an electric field of 5 Multiplication-Sign 10{sup 3} V/cm has been obtained in a 17-nm-wide quantum well with an undoped 4-nm-thick InAs insert. In the structures with additional doping of the InAs insert, which facilitates an increase in the density of electrons in the quantum well to 4.0 Multiplication-Sign 10{sup 12} cm{sup -2}, the maximum drift velocity is as high as 2 Multiplication-Sign 10{sup 7} cm/s in an electric field of 7 Multiplication-Sign 10{sup 3} V/cm.

  6. CONTROL OF LASER RADIATION PARAMETERS: Interferometric modulation in an optical amplifier based on an InGaAsP/lnP heterostructure

    NASA Astrophysics Data System (ADS)

    Luc, Vu V.; Duraev, V. P.; Eliseev, P. G.; Nedelin, E. T.; Tsotsoriya, M. V.

    1992-07-01

    Optical amplifiers made of laser diodes can be used as fast switches and modulators of the transmitted light. An "interferometric" modulation variant is interesting in this application: a part of the input radiation propagates along a passive emitter layer and interferes at the output with a part transmitted by an amplifying region. An optical amplifier operating in the 1.3-μm range made of an InGaAsP/lnP heterostructure is used as an example to show that such an interferometric variant can be used to achieve separately amplitude and phase modulation, and to increase the slope of the amplitude characteristic.

  7. Study of resistive switching and magnetism modulation in the Pt/CoFe{sub 2}O{sub 4}/Nb:SrTiO{sub 3} heterostructures

    SciTech Connect

    Wang, Qiangwen; Zhao, Meng; Wei, Maocai; Zhang, Feng; Zhang, Yuan; Sun, Beilei; Li, Meiya E-mail: myli@whu.edu.cn; Liu, Xiaolian

    2015-08-10

    CoFe{sub 2}O{sub 4} (CFO) thin films are epitaxially grown on Nb doped (001) SrTiO{sub 3} (NSTO) single-crystal substrates by pulsed laser deposition to form Pt/CFO/NSTO heterostructures. These heterostructures exhibit typical bipolar resistive switching effect with maximum switching ratio of 5 × 10{sup 4}, multi-level resistance states, excellent retention, and anti-fatigue properties. When the resistance states of the heterostructures are switched between low resistance state and high resistance state upon applying bias voltages, the saturation magnetization of the CFO films shows corresponding changes associated with the resistive switching. These close correlations between the resistive switching and the magnetization can be attributed to the electrons filling into and releasing from the defect energy levels introduced by oxygen vacancies in the CFO film. These results show potential application in the multi-functional magnetoelectric sensor and non-volatile multi-level resistive switching memory.

  8. An In/sub 0. 52/Al/sub 0. 48/As/n/sup +/-In/sub 0. 53/Ga/sub 0. 47/As MISFET with a modulation-doped channel

    SciTech Connect

    DelAlamo, J.A. . Dept. of Electrical Engineering and Computer Science); Mizutani, T. )

    1989-08-01

    A heterostructure metal-insulator-semiconductor field-effect transistor (MISFET) with a modulation-doped channel is proposed. In this device, a very thin undoped subchannel is located between the undoped wide-bandgap insulator and a thin heavily doped channel. In the depletion mode of operation, electron transport takes place along the heavily doped channel. When the device enters the accumulation mode of operation, electrons pile up against the heterointerface in the high-mobility undoped subchannel. This should result in markedly improved transport characteristics at the onset of accumulation. The concept is demonstrated in the In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As system on InP.

  9. Axial Ge/Si nanowire heterostructure tunnel FETs

    SciTech Connect

    Picraux, Sanuel T; Daych, Shadi A

    2010-01-01

    The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

  10. Photoinduced field modulation in multiquantum well heterostructures: A new photocurrent gain mechanism

    NASA Astrophysics Data System (ADS)

    Ripamonti, Giancarlo; Capasso, Federico; Tsang, Won-Tien; Hutchinson, Albert L.

    A new photocurrent gain mechanism in multiquantum well structures has been observed. Unlike conventional photoconductors, the gain in these devices is caused not by a modulation of the conductivity, but by a modulation of the electric field. The physical basis of this phenomenon is the partial screening of the electric field in the wells due to the pile-up of photocarriers. At constant bias voltage this leads to an enhancement of the field in the barrier layers. In structures with injecting contacts this mechanism enhances electron injection and therefore gives rise to photocurrent gain.

  11. Experimental and Theoretical Studies of Phase Modulation in Yb-doped Fiber Amplifiers

    DTIC Science & Technology

    2012-04-01

    14. ABSTRACT We present detailed studies of the effect of sinusoidal phase modulation on stimulated Brillouin scattering (SBS) in ytterbium -doped...studies of the effect of sinusoidal phase modulation on stimulated Brillouin scattering (SBS) in ytterbium -doped fiber amplifiers. Based on a time...which is limited by solubility limits of ytterbium as well as associated photodarkening effects. Similarly, power scaling in single-frequency fiber

  12. Electric field modulation of the band structure in MoS2/WS2 van der waals heterostructure

    NASA Astrophysics Data System (ADS)

    Li, Wei; Wang, Tianxing; Dai, Xianqi; Wang, Xiaolong; Zhai, Caiyun; Ma, Yaqiang; Chang, Shanshan; Tang, Yanan

    2017-01-01

    Using density functional theory calculations, we investigate the bandstructure of MoS2/WS2 van der waals heterostructure by applying external electric field perpendicular to the layers. It is demonstrated that the MoS2/WS2 is a type-II heterostructure, and therefore the electrons and holes are spatially separated. The band gap of MoS2/WS2 heterostructure continuously decreases with increasing external electric field, eventually a transition from semiconductor to metal is observed. Applying external electric field along +z direction and -z directions has different effects on the band gap due to the intrinsic spontaneous polarization in MoS2/WS2 heterostructure. The calculated result indicates that the band inversion in MoS2/WS2 heterostructure can be induced by changing the strength of the external electric field. The external electric field can significantly tune the band offsets almost linearly and modify the band alignment between MoS2 and WS2. The present study would open a new avenue for application of such transition-metal dichalcogenides heterostructures in future nano- and optoelectronics.

  13. Anisotropic transport in modulation-doped quantum-well structures

    NASA Technical Reports Server (NTRS)

    Radulescu, D. C.; Wicks, G. W.; Schaff, W. J.; Calawa, A.R.; Eastman, L. F.

    1987-01-01

    Anisotropic electron transport has been observed in GaAs modulation-doped quantum wells grown by molecular-beam epitaxy on a thick (001) Al(0.3)Ga(0.7)As buffer grown at 620 C. Thicker quantum wells (150, 200, and 300 A) show progressively less anisotropy, which vanishes for a 300-A quantum well. The degree of anisotropy is also reduced or eliminated by suspending growth of the Al(0.3)Ga(0.7)As for a period of 300 s prior to growing the GaAs quantum well. Growing the Al(0.3)Ga(0.7)As buffer at higher temperatures (680 C) also reduces the degree of anisotropy. Higher two-dimensional electron gas sheet densities result in less anisotropy.The anisotropy is eliminated by replacing the thick Al(0.3)Ga(0.7)As buffer with a periodic multilayer structure comprising 15 A of GaAs and 200 A of Al(0.3)Ga(0.7)As. The degree of anisotropy is related to the thickness and growth parameters of the Al(0.3)Ga(0.7)As layer grown just prior to the growth of the GaAs.

  14. Thermoelectric Properties of Complex Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Cain, Tyler Andrew

    Thermoelectrics are a promising energy conversion technology for power generation and cooling systems. The thermal and electrical properties of the materials at the heart of thermoelectric devices dictate conversion efficiency and technological viability. Studying the fundamental properties of potentially new thermoelectric materials is of great importance for improving device performance and understanding the electronic structure of materials systems. In this dissertation, investigations on the thermoelectric properties of a prototypical complex oxide, SrTiO3, are discussed. Hybrid molecular beam epitaxy (MBE) is used to synthesize La-doped SrTiO3 thin films, which exhibit high electron mobilities and large Seebeck coefficients resulting in large thermoelectric power factors at low temperatures. Large interfacial electron densities have been observed in SrTiO3/RTiO 3 (R=Gd,Sm) heterostructures. The thermoelectric properties of such heterostructures are investigated, including the use of a modulation doping approach to control interfacial electron densities. Low-temperature Seebeck coefficients of extreme electron-density SrTiO3 quantum wells are shown to provide insight into their electronic structure.

  15. A review of nano-optics in metamaterial hybrid heterostructures

    SciTech Connect

    Singh, Mahi R.

    2014-03-31

    We present a review for the nonlinear nano-optics in quantum dots doped in a metamaterial heterostructure. The heterostructure is formed by depositing a metamaterial on a dielectric substrate and ensemble of noninteracting quantum dots are doped near the heterostructure interface. It is shown that there is enhancement of the second harmonic generation due to the surface plasmon polaritons field present at the interface.

  16. Heterodimensional Schottky contacts to modulation-doped heterojunction with application to photodetection

    NASA Astrophysics Data System (ADS)

    Seddik, Amro Anwar

    The growing technological demand for high speed and compact integrated electronics and Optics is a pressing challenge. Speed and compactness necessitate low power consumption semiconductors with high transport mobility carriers, with potential of ultra large-scale integration of electronic and Optoelectronics circuitry. One avenue to fulfill these requirements is to utilize reduced dimensionality where carriers are spatially confined to less than three-dimensions, causing their energy levels to become quantized and their transport favorably affected. With recent progress in semiconductor growth and processing technologies low dimensionality has become practically realizable, this makes the study of contact properties to these systems increasingly important. In this work we study the contact between a low- dimensional semiconductor structure and a three- dimensional metal and the application of such a contact in photodetection. We theoretically derive the thermionic emission current for Schottky contact to two-dimensional and one-dimensional structures. The derivation underscores the discrete nature of low-dimensional structures and shows that the thermionic emission current is reduced by a factor exponentially proportional to the first quantized energy level. We also propose and formulate, for the first time, a physical phenomenon in two-dimensional structures created by modulation doping of a heterojunction, which is the effect of the cloud of electrons in the small bandgap material on the thermionic emission current. We have named this the electron- electron cloud effect; we show that this interaction increases the effective Schottky barrier height in a fashion counter to the image force lowering mechanism. In order to realize Schottky contact to low-dimensional structures, we have fabricated a novel Heterojunction Metal-Semiconductor-Metal (HMSM) photodetector. Experimental characterization and the general trends of the behavior of the HMSM devices are presented

  17. Modulation of electronic properties of silicon carbide nanotubes via sulphur-doping: An ab initio study

    NASA Astrophysics Data System (ADS)

    Singh, Ram Sevak; Solanki, Ankit

    2016-03-01

    Silicon carbide nanotubes (SiCNTs) have received a great deal of scientific and commercial interest due to their intriguing properties that include high temperature stability and electronic properties. For their efficient and widespread applications, tuning of electronic properties of SiCNTs is an attractive study. In this article, electronic properties of sulphur doped (S-doped) zigzag (9 , 0) SiCNT is investigated by ab initio calculations based on density functional theory (DFT). Energy band structures and density of states of fully optimized undoped and doped structures with varying dopant concentration are calculated. S-doped on C-site of the nanotube exhibits a monotonic reduction of energy gap with increase in dopant concentration, and the nanotube transforms from semiconductor to metal at high dopant concentration. In case of S-doped on Si-site doping has less influence on modulating electronic structures, which results in reduction of energy gap up to a moderate doping concentration. Importantly, S preferential substitutes of Si-sites and the nanotube with S-doped on Si-site are energetically more stable as compared to the nanotube with S-doped on C-site. The study of tunable electronic properties in S-doped SiCNT may have potential in fabricating nanoelectronic devices, hydrogen storage and gas sensing applications.

  18. All-optical Mach-Zehnder modulator using a photochromic dye-doped polymer

    NASA Astrophysics Data System (ADS)

    Kang, Jae-Wook; Kim, Jang-Joo; Kim, Eunkyoung

    2002-03-01

    An all-optical Mach-Zehnder modulator is demonstrated which is composed of a polymer waveguide doped with a photochromic dye in the core and a thick light blocking metal layer on it. The metal layer was opened on one arm of the Mach-Zehnder modulator, so that only one arm of the modulator could be irradiated by modulation light, thus allowing a differential phase shift. The optical modulator exhibited an extinction ratio of about -12 dB at a wavelength of 1.55 μm. A simple kinetic model developed to delineate the refractive index change in the dye-doped polymer film was applied to predict the evolution of the modulation characteristics.

  19. Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping

    NASA Astrophysics Data System (ADS)

    Ming, Fangfei; Mulugeta, Daniel; Tu, Weisong; Smith, Tyler S.; Vilmercati, Paolo; Lee, Geunseop; Huang, Ying-Tzu; Diehl, Renee D.; Snijders, Paul C.; Weitering, Hanno H.

    2017-03-01

    Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing chemical disorder. Here we successfully exploit a modulation doping scheme to uncover, in conjunction with a scanning tunnelling microscope tip-assist, a hidden equilibrium phase in a hole-doped bilayer of Sn on Si(111). This new phase is intrinsically phase separated into insulating domains with polar and nonpolar symmetries. Its formation involves a spontaneous symmetry breaking process that appears to be electronically driven, notwithstanding the lack of metallicity in this system. This modulation doping approach allows access to novel phases of matter, promising new avenues for exploring competing quantum matter phases on a silicon platform.

  20. Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping.

    PubMed

    Ming, Fangfei; Mulugeta, Daniel; Tu, Weisong; Smith, Tyler S; Vilmercati, Paolo; Lee, Geunseop; Huang, Ying-Tzu; Diehl, Renee D; Snijders, Paul C; Weitering, Hanno H

    2017-03-07

    Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing chemical disorder. Here we successfully exploit a modulation doping scheme to uncover, in conjunction with a scanning tunnelling microscope tip-assist, a hidden equilibrium phase in a hole-doped bilayer of Sn on Si(111). This new phase is intrinsically phase separated into insulating domains with polar and nonpolar symmetries. Its formation involves a spontaneous symmetry breaking process that appears to be electronically driven, notwithstanding the lack of metallicity in this system. This modulation doping approach allows access to novel phases of matter, promising new avenues for exploring competing quantum matter phases on a silicon platform.

  1. Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping

    DOE PAGES

    Ming, Fangfei; Mulugeta Amare, Daniel; Tu, Weisong; ...

    2017-03-07

    Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing chemical disorder. Here we successfully exploit a modulation doping scheme to uncover, in conjunction with a scanning tunnelling microscope tip-assist, a hidden equilibrium phase in a hole-doped bilayer of Sn on Si(111). This new phase is intrinsically phase separated into insulating domains with polar and nonpolar symmetries. Itsmore » formation involves a spontaneous symmetry breaking process that appears to be electronically driven, notwithstanding the lack of metallicity in this system. This modulation doping approach allows access to novel phases of matter, promising new avenues for exploring competing quantum matter phases on a silicon platform.« less

  2. Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping

    PubMed Central

    Ming, Fangfei; Mulugeta, Daniel; Tu, Weisong; Smith, Tyler S.; Vilmercati, Paolo; Lee, Geunseop; Huang, Ying-Tzu; Diehl, Renee D.; Snijders, Paul C.; Weitering, Hanno H.

    2017-01-01

    Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing chemical disorder. Here we successfully exploit a modulation doping scheme to uncover, in conjunction with a scanning tunnelling microscope tip-assist, a hidden equilibrium phase in a hole-doped bilayer of Sn on Si(111). This new phase is intrinsically phase separated into insulating domains with polar and nonpolar symmetries. Its formation involves a spontaneous symmetry breaking process that appears to be electronically driven, notwithstanding the lack of metallicity in this system. This modulation doping approach allows access to novel phases of matter, promising new avenues for exploring competing quantum matter phases on a silicon platform. PMID:28266499

  3. The modulation of Schottky barriers of metal-MoS2 contacts via BN-MoS2 heterostructures.

    PubMed

    Su, Jie; Feng, Liping; Zhang, Yan; Liu, Zhengtang

    2016-06-22

    Using first-principles calculations within density functional theory, we systematically studied the effect of BN-MoS2 heterostructure on the Schottky barriers of metal-MoS2 contacts. Two types of FETs are designed according to the area of the BN-MoS2 heterostructure. Results show that the vertical and lateral Schottky barriers in all the studied contacts, irrespective of the work function of the metal, are significantly reduced or even vanish when the BN-MoS2 heterostructure substitutes the monolayer MoS2. Only the n-type lateral Schottky barrier of Au/BN-MoS2 contact relates to the area of the BN-MoS2 heterostructure. Notably, the Pt-MoS2 contact with n-type character is transformed into a p-type contact upon substituting the monolayer MoS2 by a BN-MoS2 heterostructure. These changes of the contact natures are ascribed to the variation of Fermi level pinning, work function and charge distribution. Analysis demonstrates that the Fermi level pinning effects are significantly weakened for metal/BN-MoS2 contacts because no gap states dominated by MoS2 are formed, in contrast to those of metal-MoS2 contacts. Although additional BN layers reduce the interlayer interaction and the work function of the metal, the Schottky barriers of metal/BN-MoS2 contacts still do not obey the Schottky-Mott rule. Moreover, different from metal-MoS2 contacts, the charges transfer from electrodes to the monolayer MoS2, resulting in an increment of the work function of these metals in metal/BN-MoS2 contacts. These findings may prove to be instrumental in the future design of new MoS2-based FETs with ohmic contact or p-type character.

  4. Emission of terahertz radiation from GaN/AlGaN heterostructure under electron heating in lateral electric field

    NASA Astrophysics Data System (ADS)

    Shalygin, V. A.; Vorobjev, L. E.; Firsov, D. A.; Sofronov, A. N.; Melentyev, G. A.; Lundin, W. V.; Sakharov, A. V.; Tsatsulnikov, A. F.

    2013-12-01

    Spontaneous emission of terahertz radiation from modulation-doped AlGaN/GaN heterostructure under conditions of heating of a two-dimensional electron gas in the lateral electric field has been studied. The experimental data on the field dependence of the integral intensity of THz emission is compared with the theoretical simulation of blackbody-like emission from hot 2D electrons. Complementary transport measurements have been carried out to determine the dependence of effective electron temperature on electric field.

  5. Magnetic modulation doping in topological insulators toward higher-temperature quantum anomalous Hall effect

    SciTech Connect

    Mogi, M. Yoshimi, R.; Yasuda, K.; Kozuka, Y.; Tsukazaki, A.; Takahashi, K. S.; Kawasaki, M.; Tokura, Y.

    2015-11-02

    Quantum anomalous Hall effect (QAHE), which generates dissipation-less edge current without external magnetic field, is observed in magnetic-ion doped topological insulators (TIs) such as Cr- and V-doped (Bi,Sb){sub 2}Te{sub 3}. The QAHE emerges when the Fermi level is inside the magnetically induced gap around the original Dirac point of the TI surface state. Although the size of gap is reported to be about 50 meV, the observable temperature of QAHE has been limited below 300 mK. We attempt magnetic-Cr modulation doping into topological insulator (Bi,Sb){sub 2}Te{sub 3} films to increase the observable temperature of QAHE. By introducing the rich-Cr-doped thin (1 nm) layers at the vicinity of both the surfaces based on non-Cr-doped (Bi,Sb){sub 2}Te{sub 3} films, we have succeeded in observing the QAHE up to 2 K. The improvement in the observable temperature achieved by this modulation-doping appears to be originating from the suppression of the disorder in the surface state interacting with the rich magnetic moments. Such a superlattice designing of the stabilized QAHE may pave a way to dissipation-less electronics based on the higher-temperature and zero magnetic-field quantum conduction.

  6. Detection of EPO doping and blood doping: the haematological module of the Athlete Biological Passport.

    PubMed

    Schumacher, Yorck Olaf; Saugy, Martial; Pottgiesser, Torben; Robinson, Neil

    2012-11-01

    The increase of the body's capacity to transport oxygen is a prime target for doping athletes in all endurance sports. For this pupose, blood transfusions or erythropoiesis stimulating agents (ESA), such as erythropoietin, NESP, and CERA are used. As direct detection of such manipulations is difficult, biomarkers that are connected to the haematopoietic system (haemoglobin concentration, reticulocytes) are monitored over time (Athlete Biological Passport (ABP)) and analyzed using mathematical models to identify patterns suspicious of doping. With this information, athletes can either be sanctioned directly based on their profile or targeted with conventional doping tests. Key issues for the appropriate use of the ABP are correct targeting and use of all available information (e.g. whereabouts, cross sectional population data) in a forensic manner. Future developments of the passport include the correction of all concentration-based variables for shifts in plasma volume, which might considerably increase sensitivity. New passport markers from the genomic, proteomic, and metabolomic level might add further information, but need to be validated before integration into the passport procedure. A first assessment of blood data of federations that have implemented the passport show encouraging signs of a decreased blood-doping prevalence in their athletes, which adds scientific credibility to this innovative concept in the fight against ESA- and blood doping.

  7. All-optical, thermo-optical path length modulation based on the vanadium-doped fibers.

    PubMed

    Matjasec, Ziga; Campelj, Stanislav; Donlagic, Denis

    2013-05-20

    This paper presents an all-fiber, fully-optically controlled, optical-path length modulator based on highly absorbing optical fiber. The modulator utilizes a high-power 980 nm pump diode and a short section of vanadium-co-doped single mode fiber that is heated through absorption and a non-radiative relaxation process. The achievable path length modulation range primarily depends on the pump's power and the convective heat-transfer coefficient of the surrounding gas, while the time response primarily depends on the heated fiber's diameter. An absolute optical length change in excess of 500 µm and a time-constant as short as 11 ms, were demonstrated experimentally. The all-fiber design allows for an electrically-passive and remote operation of the modulator. The presented modulator could find use within various fiber-optics systems that require optical (remote) path length control or modulation.

  8. Refractive index modulation in polymer film doped with diazo Meldrum's acid

    NASA Astrophysics Data System (ADS)

    Zanutta, Alessio; Villa, Filippo; Bertarelli, Chiara; Bianco, Andrea

    2016-08-01

    Diazo Meldrum's acid undergoes a photoreaction induced by UV light and it is used as photosensitizer in photoresists. Upon photoreaction, a change in refractive index occurs, which makes this system interesting for volume holography. We report on the sublimation effect at room temperature and the effect of photoirradiation on the refractive index in thin films of CAB (Cellulose acetate butyrate) doped with different amount of diazo Meldrum's acid. A net modulation of the refractive index of 0.01 is achieved with 40% of doping ratio together with a reduction of the film thickness.

  9. Resonant tunneling modulation in quasi-2D Cu2O/SnO2 p-n horizontal-multi-layer heterostructure for room temperature H2S sensor application

    PubMed Central

    Cui, Guangliang; Zhang, Mingzhe; Zou, Guangtian

    2013-01-01

    Heterostructure material that acts as resonant tunneling system is a major scientific challenge in applied physics. Herein, we report a resonant tunneling system, quasi-2D Cu2O/SnO2 p-n heterostructure multi-layer film, prepared by electrochemical deposition in a quasi-2D ultra-thin liquid layer. By applying a special half-sine deposition potential across the electrodes, Cu2O and SnO2 selectively and periodically deposited according to their reduction potentials. The as-prepared heterostructure film displays excellent sensitivity to H2S at room temperature due to the resonant tunneling modulation. Furthermore, it is found that the laser illumination could enhance the gas response, and the mechanism with laser illumination is discussed. It is the first report on gas sensing application of resonant tunneling modulation. Hence, heterostructure material act as resonant tunneling system is believed to be an ideal candidate for further improvement of room temperature gas sensing. PMID:23409241

  10. High Energy Neutron Irradiation Effects in GaAs Modulation-Doped Field Effect Transistors (MODFETS): Threshold Voltage

    DTIC Science & Technology

    1989-06-15

    PREFACE We would like to thank B. K. Janousek, W. E. Yamada, and L. W. Aukerman for their technical assistance in this study. Aceession For [iTIS CRA...Doped GaAs-(AlGa)As Heterostructures," Surface Science, 132, 519-526, (1983). 8. L. W. Aukerman , "Radiation-Produced Energy Levels in Compound Semi...conductors," J. Appl. Phys. LO, 1239-1243, (Aug. 1959). 9. L. W. Aukerman , "Radiation Effects," in Semiconductors and Semimetals: Physics of III-V

  11. Efficient and Hysteresis-Free Field Effect Modulation of Ambipolarly Doped Vanadium Dioxide Nanowires

    NASA Astrophysics Data System (ADS)

    Peng, Xingyue; Yang, Yiming; Hou, Yasen; Travaglini, Henry C.; Hellwig, Luke; Hihath, Sahar; van Benthem, Klaus; Lee, Kathleen; Liu, Weifeng; Yu, Dong

    2016-05-01

    The subpicosecond metal-insulator phase transition in vanadium dioxide (VO2 ) has attracted extensive attention with potential applications in ultrafast Mott transistors, which are based on electric-field-induced phase transition. However, the development of VO2 -based transistors lags behind, owing to inefficient and hysteretic gate modulation. Here we report ambipolar doping and strong field effects free of hysteresis in single-crystal VO2 nanowires synthesized via catalyst-free chemical vapor deposition. The ambipolarly doped VO2 nanowires are achieved by controlling the oxygen vacancy density during the synthesis and show strong gate effects because of their relatively low doping level. Both the doping type of the nanowires and the band-bending direction at the metal-insulator domain walls are reversibly switched by electrochemical gating, as revealed by scanning photocurrent microscopy. Furthermore, we eliminate the hysteresis in gate sweep via a hybrid gating method, which combines the merits of liquid-ionic and solid gating. The capability of efficient field effect modulation of ambipolar conduction and band alignment offers opportunities on understanding the phase transition mechanism and enables electronic applications based on VO2 .

  12. Modulation-Doped In2 O3 /ZnO Heterojunction Transistors Processed from Solution.

    PubMed

    Khim, Dongyoon; Lin, Yen-Hung; Nam, Sungho; Faber, Hendrik; Tetzner, Kornelius; Li, Ruipeng; Zhang, Qiang; Li, Jun; Zhang, Xixiang; Anthopoulos, Thomas D

    2017-03-15

    This paper reports the controlled growth of atomically sharp In2 O3 /ZnO and In2 O3 /Li-doped ZnO (In2 O3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2 O3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2 O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2 O3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2 O3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.

  13. Impact of the modulation doping layer on the ν = 5/2 anisotropy

    DOE PAGES

    Shi, X.; Pan, W.; Baldwin, K. W.; ...

    2015-03-30

    We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ν = 5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We have observed that in the sample of the smallest d, electronic transport is anisotropic when the in-plane magnetic field (Bip) is parallel to the [1–10] crystallographic direction, but remains more or less isotropic when Bip // [110]. In contrast, in the sample of largest d,more » electronic transport is anisotropic in both crystallographic directions. Lastly, our results clearly show that the modulation doping layer plays an important role in the tilted field induced ν = 5/2 anisotropy.« less

  14. Impact of the modulation doping layer on the ν = 5/2 anisotropy

    SciTech Connect

    Shi, X.; Pan, W.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.

    2015-03-30

    We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ν = 5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We have observed that in the sample of the smallest d, electronic transport is anisotropic when the in-plane magnetic field (Bip) is parallel to the [1–10] crystallographic direction, but remains more or less isotropic when Bip // [110]. In contrast, in the sample of largest d, electronic transport is anisotropic in both crystallographic directions. Lastly, our results clearly show that the modulation doping layer plays an important role in the tilted field induced ν = 5/2 anisotropy.

  15. Electric-field modulation of photoinduced effect in phase-separated Pr0.65 (Ca0.75Sr0.25)0.35MnO3/PMN-PT heterostructure

    NASA Astrophysics Data System (ADS)

    Li, W.; Dong, X. L.; Wang, S. H.; Jin, K. X.

    2016-08-01

    In this letter, we report the photoinduced effect modulated by different electric fields in the Pr0.65 (Ca0.75Sr0.25)0.35MnO3/0.7PbMg1/3Nb2/3O3-0.3PbTiO3 heterostructure. The film exhibits a decrease in the resistance up to five orders of magnitude by enhancing applied electric fields, combined with an electric-field-induced insulator-to-metal transition. More interestingly, a reversible bistability arises in the photoinduced change in resistance at T < 80 K as the voltages are increased. The results can be attributed to the phase separation in manganites, which provides a prototype of photoelectric conversion for electric-field modulation of all-oxide heterostructures.

  16. Experimental Performance of a Single-Mode Ytterbium-doped Fiber Ring Laser with Intracavity Modulator

    NASA Technical Reports Server (NTRS)

    Numata, Kenji; Camp, Jordan

    2012-01-01

    We have developed a linearly polarized Ytterbium-doped fiber ring laser with a single longitudinal mode output at 1064 run. A fiber-coupled intracavity phase modulator ensured mode-hop free operation and allowed fast frequency tuning. The fiber laser was locked with high stability to an iodine-stabilized laser, showing a frequency noise suppression of a factor approx 10 (exp 5) at 1 mHz

  17. Isoelectronic Tungsten Doping in Monolayer MoSe2 for Carrier Type Modulation.

    PubMed

    Li, Xufan; Lin, Ming-Wei; Basile, Leonardo; Hus, Saban M; Puretzky, Alexander A; Lee, Jaekwang; Kuo, Yen-Chien; Chang, Lo-Yueh; Wang, Kai; Idrobo, Juan C; Li, An-Ping; Chen, Chia-Hao; Rouleau, Christopher M; Geohegan, David B; Xiao, Kai

    2016-10-01

    Carrier-type modulation is demonstrated in 2D transition metal dichalcogenides as n-type monolayer MoSe2 is converted to nondegenerate p-type monolayer Mo1-x Wx Se2 through isoelectronic doping. Although the alloys are mesoscopically uniform, the p-type conduction in monolayer Mo1-x Wx Se2 appears to originate from the upshift of the valenceband maximum toward the Fermi level at highly localized "W-rich" regions in the lattice.

  18. Heterostructure design optimization for laser cooling of GaAs

    NASA Astrophysics Data System (ADS)

    Imangholi, B.; Wang, C.; Soto, E.; Sheik-Bahae, M.; Stintz, A.; Malloy, K.; Nuntawong, N.; Epstein, R.

    2007-02-01

    Doping of the clad layers in thin GaAs/GaInP heterostructures, displaces the band energy discontinuity, modifies the carrier concentration in the active GaAs region and changes the quality of the hetero-interfaces. As a result, internal and consequently external quantum efficiencies in the double heterostructure are affected. In this paper, the interfacial quality of GaAs/GaInP heterostructure is systematically investigated by adjusting the doping level and type (n or p) of the cladding layer. An optimum structure for laser cooling applications is proposed.

  19. High drain current density and reduced gate leakage current in channel-doped AlGaN /GaN heterostructure field-effect transistors with Al2O3/Si3N4 gate insulator

    NASA Astrophysics Data System (ADS)

    Maeda, Narihiko; Wang, Chengxin; Enoki, Takatomo; Makimoto, Toshiki; Tawara, Takehiko

    2005-08-01

    Channel-doped AlGaN /GaN heterostructure field-effect transistors (HFETs) with metal-insulator-semiconductor (MIS) structures have been fabricated to obtain the high drain current density and reduced gate leakage current. A thin bilayer dielectric of Al2O3(4nm)/Si3N4(1nm) was used as the gate insulator, to simultaneously take advantage of the high-quality interface between Si3N4 and AlGaN, and high resistivity and a high dielectric constant of Al2O3. A MIS HFET with a gate length of 1.5μm has exhibited a record high drain current density of 1.87A/mm at a gate voltage (Vg) of +3V, which is ascribed to a high applicable Vg and a very high two-dimensional electron gas (2DEG) density of 2.6×1013cm-2 in the doped channel. The gate leakage current was reduced by two or three orders of magnitude, compared with that in normal HFETs without a gate insulator. The transconductance (gm) was 168mS/mm, which is high in the category of the MIS structure. Channel-doped MIS HFETs fabricated have thus been proved to exhibit the high current density, reduced gate leakage current, and relatively high transconductance, hence, promising for high-power applications.

  20. Doping the Mind: Dopaminergic Modulation of Prefrontal Cortical Cognition.

    PubMed

    Ranganath, Ajit; Jacob, Simon N

    2016-12-01

    The prefrontal cortex is the center of cognitive control. Processing in prefrontal cortical circuits enables us to direct attention to behaviorally relevant events; to memorize, structure, and categorize information; and to learn new concepts. The prefrontal cortex receives strong projections from midbrain neurons that use dopamine as a transmitter. In this article, we review the crucial role dopamine plays as a modulator of prefrontal cognitive functions, in the primate brain in particular. Following a summary of the anatomy and physiology of the midbrain dopamine system, we focus on recent studies that investigated dopaminergic effects in prefrontal cortex at the cellular level. We then discuss how unregulated prefrontal dopamine signaling could contribute to major disorders of cognition. The studies highlighted in this review demonstrate the powerful influence dopamine exerts on the mind.

  1. Nb and Ta layer doping effects on the interfacial energetics and electronic properties of LaAlO3/SrTiO3 heterostructure: first-principles analysis.

    PubMed

    Nazir, Safdar; Behtash, Maziar; Cheng, Jianli; Luo, Jian; Yang, Kesong

    2016-01-28

    The two-dimensional electron gas (2DEG) formed at the n-type (LaO)(+1)/(TiO2)(0) interface in the polar/nonpolar LaAlO3/SrTiO3 (LAO/STO) heterostructure (HS) has emerged as a prominent research area because of its great potential for nanoelectronic applications. Due to its practical implementation in devices, desired physical properties such as high charge carrier density and mobility are vital. In this respect, 4d and 5d transition metal doping near the interfacial region is expected to tailor electronic properties of the LAO/STO HS system effectively. Herein, we studied Nb and Ta-doping effects on the energetics, electronic structure, interfacial charge carrier density, magnetic moment, and the charge confinements of the 2DEG at the n-type (LaO)(+1)/(TiO2)(0) interface of LAO/STO HS using first-principles density functional theory calculations. We found that the substitutional doping of Nb(Ta) at Ti [Nb(Ta)@Ti] and Al [Nb(Ta)@Al] sites is energetically more favorable than that at La [Nb(Ta)@La] and Sr [Nb(Ta)@Sr] sites, and under appropriate thermodynamic conditions, the changes in the interfacial energy of HS systems upon Nb(Ta)@Ti and Nb(Ta)@Al doping are negative, implying that the formation of these structures is energetically favored. Our calculations also showed that Nb(Ta)@Ti and Nb(Ta)@Al doping significantly improve the interfacial charge carrier density with respect to that of the undoped system, which is because the Nb(Ta) dopant introduces excess free electrons into the system, and these free electrons reside mainly on the Nb(Ta) ions and interfacial Ti ions. Hence, along with the Ti 3d orbitals, the Nb 4d and Ta 5d orbitals also contribute to the interfacial metallic states; accordingly, the magnetic moments on the interfacial Ti ions increase significantly. As expected, the Nb@Al and Ta@Al doped LAO/STO HS systems show higher interfacial charge carrier density than the undoped and other doped systems. In contrast, Nb@Ti and Ta@Ti doped systems may

  2. Tunable Schottky contacts in the antimonene/graphene van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Li, Wei; Wang, Xinlian; Dai, Xianqi

    2017-03-01

    Electronic structures modulation in the antimonene/graphene van der Waals(vdW) heterostructure with an external electric field(Eext) are investigated by density functional theory calculations. It is demonstrated that weak vdW interactions dominate between antimonene and graphene with their intrinsic electronic properties preserved. Furthermore, the vertical Eext can control not only the Schottky barrier but also the Schottky contacts (n-type and p-type) and Ohmic contacts (n-type) at the antimonene/graphene interface. Meanwhile, the negative Eext can shifts the Dirac point of graphene above the Fermi level, resulting in p-type doping in graphene because electrons can easily transfer from the Dirac point of graphene to the conduction band of antimonene. The present study would open a new avenue for application of ultrathin antimonene/graphene heterostructures in future nano- and optoelectronics.

  3. Semiconductor heterostructure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold John (Inventor); Woodall, Jerry MacPherson (Inventor)

    1978-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  4. Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus.

    PubMed

    Xiang, Du; Han, Cheng; Wu, Jing; Zhong, Shu; Liu, Yiyang; Lin, Jiadan; Zhang, Xue-Ao; Ping Hu, Wen; Özyilmaz, Barbaros; Neto, A H Castro; Wee, Andrew Thye Shen; Chen, Wei

    2015-03-12

    Black phosphorus, a fast emerging two-dimensional material, has been configured as field effect transistors, showing a hole-transport-dominated ambipolar characteristic. Here we report an effective modulation on ambipolar characteristics of few-layer black phosphorus transistors through in situ surface functionalization with caesium carbonate (Cs2CO3) and molybdenum trioxide (MoO3), respectively. Cs2CO3 is found to strongly electron dope black phosphorus. The electron mobility of black phosphorus is significantly enhanced to ~27 cm(2) V(-1) s(-1) after 10 nm Cs2CO3 modification, indicating a greatly improved electron-transport behaviour. In contrast, MoO3 decoration demonstrates a giant hole-doping effect. In situ photoelectron spectroscopy characterization reveals significant surface charge transfer occurring at the dopants/black phosphorus interfaces. Moreover, the surface-doped black phosphorus devices exhibit a largely enhanced photodetection behaviour. Our findings coupled with the tunable nature of the surface transfer doping scheme ensure black phosphorus as a promising candidate for further complementary logic electronics.

  5. Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus

    NASA Astrophysics Data System (ADS)

    Xiang, Du; Han, Cheng; Wu, Jing; Zhong, Shu; Liu, Yiyang; Lin, Jiadan; Zhang, Xue-Ao; Ping Hu, Wen; Özyilmaz, Barbaros; Neto, A. H. Castro; Wee, Andrew Thye Shen; Chen, Wei

    2015-03-01

    Black phosphorus, a fast emerging two-dimensional material, has been configured as field effect transistors, showing a hole-transport-dominated ambipolar characteristic. Here we report an effective modulation on ambipolar characteristics of few-layer black phosphorus transistors through in situ surface functionalization with caesium carbonate (Cs2CO3) and molybdenum trioxide (MoO3), respectively. Cs2CO3 is found to strongly electron dope black phosphorus. The electron mobility of black phosphorus is significantly enhanced to ~27 cm2 V-1 s-1 after 10 nm Cs2CO3 modification, indicating a greatly improved electron-transport behaviour. In contrast, MoO3 decoration demonstrates a giant hole-doping effect. In situ photoelectron spectroscopy characterization reveals significant surface charge transfer occurring at the dopants/black phosphorus interfaces. Moreover, the surface-doped black phosphorus devices exhibit a largely enhanced photodetection behaviour. Our findings coupled with the tunable nature of the surface transfer doping scheme ensure black phosphorus as a promising candidate for further complementary logic electronics.

  6. Electric-Field Modulation of Interface Magnetic Anisotropy and Spin Reorientation Transition in (Co/Pt)3/PMN-PT Heterostructure.

    PubMed

    Sun, Ying; Ba, You; Chen, Aitian; He, Wei; Wang, Wenbo; Zheng, Xiaoli; Zou, Lvkuan; Zhang, Yijun; Yang, Qu; Yan, Lingjia; Feng, Ce; Zhang, Qinghua; Cai, Jianwang; Wu, Weida; Liu, Ming; Gu, Lin; Cheng, Zhaohua; Nan, Ce-Wen; Qiu, Ziqiang; Wu, Yizheng; Li, Jia; Zhao, Yonggang

    2017-03-29

    We report electric-field control of magnetism of (Co/Pt)3 multilayers involving perpendicular magnetic anisotropy with different Co-layer thicknesses grown on Pb(Mg,Nb)O3-PbTiO3 (PMN-PT) FE substrates. For the first time, electric-field control of the interface magnetic anisotropy, which results in the spin reorientation transition, was demonstrated. The electric-field-induced changes of the bulk and interface magnetic anisotropies can be understood by considering the strain-induced change of magnetoelastic energy and weakening of Pt 5d-Co 3d hybridization, respectively. We also demonstrate the role of competition between the applied magnetic field and the electric field in determining the magnetization of the sample with the coexistence phase. Our results demonstrate electric-field control of magnetism by harnessing the strain-mediated coupling in multiferroic heterostructures with perpendicular magnetic anisotropy and are helpful for electric-field modulations of Dzyaloshinskii-Moriya interaction and Rashba effect at interfaces to engineer new functionalities.

  7. Cyclotron Resonance in a Two-Dimensional Electron Gas with Long-Range Randomness in Modulation-Doped GaAs/AlGaAs and Si/SiGe Single Quantum Wells

    NASA Astrophysics Data System (ADS)

    McCombe, B. D.; Yeo, T.; Comanescu, G.; Ashkinadze, B. M.; Tol, H. V.; Brunel, L. C.

    2001-03-01

    We have performed studies of cyclotron resonance (CR) on two high mobility, one-side modulation-doped GaAs/AlGaAs single quantum-well (SQW) samples and one one-side modulation-doped Si/SiGe heterostructure. Measurements were made at 4.2 K over a wide range of photon energies (141.8 cm-1 - 1.25 cm-1) by far-infrared laser and microwave techniques in conjunction with a superconducting magnet at 4.2 K. From linewidth analysis the behavior of the CR linewidth vs. (ωc τ)-1, where ωc is the cyclotron frequency and τ is the momentum relaxation time, is not well-explained by CR linewidth descriptions [1] which mainly deal with the effect of short-range random potential. A comparison of the experimental results with a recently suggested theoretical model of cyclotron resonance of two-dimensional electron gas with long-range randomness will be given [2]. supported by BSF96004092 and DMR 9727425. 1 T. Ando, J. Phys. Soc. Jpn. 38, 989 (1975). 2 M. M. Fogler, B. I. Shklovskii, Phys. Rev. Lett. 80, 4749 (1998).

  8. Extension of long wavelength response by modulation doping in extrinsic germanium infrared detectors

    NASA Technical Reports Server (NTRS)

    Hadek, V.; Farhoomand, J.; Beichman, C. A.; Watson, D. M.; Jack, M. D.

    1985-01-01

    A new concept for infrared detectors based on multilayer epitaxy and modulation doping has been investigated. This permits a high doping concentration and lower excitation energy in the photodetecting layer as is necessary for longer wavelength response, without incurring the detrimental effects of increased dark current and noise as would be the case with conventional detector designs. Germanium photodetectors using conventional materials and designs have a long wavelength cutoff in the infrared at 138 microns, which can only be extended through the inconvenient application of mechanical stress or magnetic fields. As a result of this approach which was arrived at from theoretical considerations and subsequently demonstrated experimentally, the long wavelength cutoff for germanium extrinsic detectors was extended beyond 200 microns, as determined by direct infrared optical measurements.

  9. Laser direct writing of modulation-doped nanowire p/n junctions.

    PubMed

    Nam, Woongsik; Mitchell, James I; Xu, Xianfan

    2016-12-02

    We demonstrate a single-step, laser-based technique to fabricate axial modulation-doped silicon nanowires. Our method is based on laser-direct-write chemical vapor deposition and has the capability to fabricate nanowires as small as 60 nm, which is far below the diffraction limit of the laser wavelength of 395 nm, with precise control of nanowire position, length, and orientation. By switching dopant gases during nanowire writing, p-n junction nanowires are produced. The p-n junction nanowires are fabricated into multifinger devices with parallel metal contacts and electrically tested to demonstrate diode characteristics.

  10. Modulation of hydride formation energies in transition metal doped Mg by alteration of spin state

    NASA Astrophysics Data System (ADS)

    Ozkanlar, Abdullah; Samuels, Alex; Clark, Aurora E.

    2013-02-01

    Coupled cluster and density functional theory calculations have been used to assess the role of the transition metal spin state upon the energetic favorability of hydride formation within small, transition metal doped, magnesium clusters. The spin state is found to modulate the occupation of bonding and anti-bonding orbitals, thus having a large effect upon both geometric and energetic parameters. This chemical description provides a potential theoretical basis for unexplained experimental observations, and indicates a mechanism for using an external magnetic field to control the thermodynamics of H2 sorption and desorption in metal hydrides.

  11. DX centers in indium aluminum arsenide heterostructures

    NASA Astrophysics Data System (ADS)

    Sari, Huseyin

    DX centers are point defects observed in many n-type doped III-V compound semi conductors. They have unique properties, which include large differences between their optical and thermal ionization energies, and a temperature dependence of the capture cross-sections. As a result of these properties DX centers exhibit a reduction in free carrier concentration and a large persistent photoconductivity (PPC) effect. DX centers also lead to a shift in the threshold voltage of modulation doped field effect transistors (MODFET) structures, at low temperatures. Most of the studies on this defect have been carried out on the Ga xAl1-xAs material system. However, to date there is significantly less work on DX centers in InxAl1-xAs compounds. This is partly due to difficulties associated with the growth of defect free materials other than lattice matched In0.52Al 0.48As on InP and partly because the energy level of the DX center is in resonance with the conduction band in In0.52Al0.48As. The purpose of this dissertation is to extend the DX center investigation to InAlAs compounds, primarily in the indirect portion of the InAlAs bandgap. In this work the indium composition dependence of the DX centers in In xAl1-xAs/InyGa1-yAs-based heterostructure is studied experimentally. Different InxAl 1-xAs epitaxial layers with x = 0.10, x = 0.15, x = 0.20, and x = 0.34 in a MODFET-like heterostructure were grown by Molecular Beam Epitaxy (MBE) on (001) GaAs substrates. In order to compensate the lattice mismatch between epitaxial layers and their substrates, step-graded buffer layers with indium composition increments of x = 0.10, every 2000 A, were used. For the samples grown with different indium contents Hall measurements as a function of both temperature and different cooling biases were performed in order to determine their carrier concentrations. A self consistent Poisson-Schrodinger numerical software is used to model the heterostructures. With the help of this numerical model

  12. Ultrafast terahertz modulation characteristic of tungsten doped vanadium dioxide nanogranular film revealed by time-resolved terahertz spectroscopy

    SciTech Connect

    Xiao, Yang; Zhai, Zhao-Hui; Zhu, Li-Guo E-mail: huangwanxia@scu.edu.cn; Li, Jun; Peng, Qi-Xian; Li, Ze-Ren; Shi, Qi-Wu; Huang, Wan-Xia E-mail: huangwanxia@scu.edu.cn; Yue, Fang; Hu, Yan-Yan

    2015-07-20

    The ultrafast terahertz (THz) modulation characteristic during photo-induced insulator-to-metal transition (IMT) of undoped and tungsten (W)-doped VO{sub 2} film was investigated at picoseconds time scale using time-resolved THz spectroscopy. W-doping slows down the photo-induced IMT dynamic processes (both the fast non-thermal process and the slow metallic phase propagation process) in VO{sub 2} film and also reduces the pump fluence threshold of photo-induced IMT in VO{sub 2} film. Along with the observed broadening of phase transition temperature window of IMT in W-doped VO{sub 2}, we conclude that W-doping prevents metallic phase domains from percolation. By further extracting carrier properties from photo-induced THz conductivity at several phase transition times, we found that the electron-electron correlation during IMT is enhanced in W-doped VO{sub 2}.

  13. Synthesis of multiple constituent ferecrystal heterostructures

    NASA Astrophysics Data System (ADS)

    Westover, Richard D.

    The ability to form multiple component heterostructures of two-dimensional materials promises to provide access to hybrid materials with tunable properties different from those of the bulk materials or two-dimensional constituents. By taking advantage of the unique properties of different constituents, numerous applications are possible for which none of the individual components are viable. The synthesis of multiple component heterostructures, however, is nontrivial, relying on either the cleaving and stacking of bulk materials in a "scotch tape" type technique or finding coincidentally favorable growth conditions which allow layers to be grown epitaxially on each other in any order. In addition, alloying of miscible materials occurs when the modulation wavelength is small. These synthetic challenges have limited the ability of scientists to fully utilize the potential of multiple component heterostructures. An alternative synthetic route to multiple component heterostructures may be found through expansion of the modulated elemental reactant technique which allows access to metastable products, known as ferecrystals, which are otherwise inaccessible. This work focuses on the expansion of the modulated elemental reactants technique for the formation of ferecrystals containing multiple constituents. As a starting point, the synthesis of the first alloy ferecrystals (SnSe) 1.16-1.09([NbxMo1-x]Se2) will be discussed. The structural and electrical characterization of these compounds will then be used to determine the intermixing of the first three component ferecrystal heterojunction ([SnSe]1+delta)([{MoxNb1-x}Se 2]1+gamma)([SnSe]1+delta)({NbyMo 1-y}Se2). Then, by synthesizing ([SnSe]1+delta) m([{MoxNb1-x}Se2]1+gamma )1([SnSe]1+delta)m({Nb xMo1-x}Se2)1 (m = 0 - 4) compounds with increasing thicknesses of SnSe, the interdiffusion of miscible constituents in ferecrystals will be studied. In addition, by comparison of the ([SnSe] 1+delta)m ([{MoxNb1-x }Se2]1+gamma)1([Sn

  14. Effect of doping and chemical ordering on the optoelectronic properties of complex oxides: Fe 2 O 3 –V 2 O 3 solid solutions and hetero-structures

    SciTech Connect

    Nayyar, Iffat H.; Chamberlin, Sara E.; Kaspar, Tiffany C.; Govind, Niranjan; Chambers, Scott A.; Sushko, Peter V.

    2017-01-01

    The electronic and optical properties of a-(Fe1xVx)2O3 at low (x = 0.04) and high (x = 0.5) doping levels are investigated using a combination of periodic and embedded cluster approaches, and time dependent density functional theory. At low V concentrations the onset of the optical absorption is B0.5 eV (i.e., nearly 1.6 eV lower than that in pure a-Fe2O3) and corresponds to the electron transitions from V 3d to Fe 3d* orbitals. At high V concentrations, optical absorption energies and intensities are sensitive to specific arrangements of Fe and V atoms and their spin configuration that determine Fe–V hybridization. The onset of the lowest inter-vanadium absorption band in the case of Fe2O3/V2O3 hetero-structures is as low as B0.3 eV and the corresponding peak is at B0.7 eV. In contrast, in the case of solid solutions this peak has lower intensity and is shifted to higher energy (B1.2 eV). Analysis of the orbital character of electronic excitation suggests that Fe2O3/V2O3 hetero-structures absorb light much more effectively than random alloys, thus promoting efficient photo-induced carrier generation. These predictions can be tested in a-(Fe1xVx)2O3 thin films synthesized with well-controlled spatial distribution of Fe and V species.

  15. The effects of doping and shell thickness on the optical and magnetic properties of Mn/Cu/Fe-doped and Co-doped ZnS nanowires/ZnO quantum dots/SiO2 heterostructures

    NASA Astrophysics Data System (ADS)

    Cao, Jian; Yang, Jinghai; Yang, Lili; Wei, Maobin; Feng, Bo; Han, Donglai; Fan, Lin; Wang, Bingji; Fu, Hao

    2012-07-01

    In this paper, we demonstrated the encapsulation of Mn/Cu/Fe-doped and co-doped ZnS nanowires (NWs) and ZnO quantum dots (QDs) with a layer of mesoporous SiO2 shell for the purpose of integrating dual emission and ferromagnetism property into one common nanostructure at room temperature. Within the ZnS:Mn2+Cu2+Fe2+/ZnO@SiO2 nanocomposites, ZnS:Mn2+Cu2+Fe2+ NWs and ZnO QDs provided color-tunable visible emission and UV emission, respectively. The color-tunable visible emission in the ZnS:Mn2+Cu2+Fe2+ NWs can be obtained by adjusting the concentrations of Mn2+, Cu2+, and Fe2+ ions. The ferromagnetism of the ZnS:Mn2+Cu2+Fe2+ NWs was observed around room temperature, the mechanism of which was explained by the super-exchange mechanism. The results of the effect of the ZnO QDs shell thickness on the optical properties of the ZnS:Mn2+/ZnO@SiO2 nanocomposites showed that the luminescence intensity of the yellow-orange emission and UV emission reached the highest value when the ratio of ZnS:Mn2+/ZnO equaled 1:5.

  16. Effect of Sr-doping of LaMnO3 spacer on modulation-doped two-dimensional electron gases at oxide interfaces

    NASA Astrophysics Data System (ADS)

    Chen, Y. Z.; Gan, Y. L.; Christensen, D. V.; Zhang, Y.; Pryds, N.

    2017-03-01

    Modulation-doped oxide two-dimensional electron gas formed at the LaMnO3 (LMO) buffered disorderd-LaAlO3/SrTiO3 (d-LAO/LMO/STO) heterointerface provides new opportunities for electronics as well as quantum physics. Herein, we studied the dependence of Sr-doping of La1-xSrxMnO3 (LSMO, x = 0, 1/8, 1/3, ½, and 1) spacer on the transport properties of d-LAO/LSMO/STO in order to determine the effects of the filling of Mn eg subbands as well as the LSMO polarity on the modulation-doping. Upon increasing the LSMO film thickness from 1 unit cell (uc) to 2 uc, a sharp metal to insulator transition of interface conduction was observed, independent of x. The resultant electron mobility is higher than 1900 cm2 V-1 s-1 at 2 K, which increases upon decreasing x. The sheet carrier density, on the other hand, is in the range of 6.9 × 1012˜1.8 × 1013 cm-2 (0.01 ˜ 0.03 e/uc) and is largely independent on x for all the metallic d-LAO/LSMO (1 uc)/STO interfaces. These results are consistent with the charge transfer induced modulation doping scheme and clarify that the polarity of the buffer layer plays a trivial role on the modulation doping. The negligible tunability of the carrier density could result from the reduction of LSMO during the deposition of disordered LAO or that the energy levels of Mn 3d electrons at the interface of LSMO/STO are hardly varied even when changing the LSMO composition from LMO to SrMnO3.

  17. Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping

    NASA Astrophysics Data System (ADS)

    Berger, Christoph; Lesnik, Andreas; Zettler, Thomas; Schmidt, Gordon; Veit, Peter; Dadgar, Armin; Bläsing, Jürgen; Christen, Jürgen; Strittmatter, André

    2016-04-01

    We report on metalorganic vapor phase epitaxy (MOVPE) of distributed Bragg reflectors (DBR) applying a periodic modulation of the GaN doping concentration only. The doping modulation changes the refractive index of GaN via the Burstein-Moss-effect. MOVPE growth of highly doped GaN:Ge and modulation of the dopant concentration by at least two orders of magnitude within few nanometers is required to achieve a refractive index contrast of 2-3%. Such modulation characteristic is achieved despite the presence of Ge memory effects and incorporation delay. We realized DBRs with up to 100 layer pairs by combining GaN:Ge with a nominal doping concentration of 1.6×1020 cm-3 as low-refractive index material with unintentionally doped GaN as high-refractive index layer. Scanning transmission electron microscope images reveal DBR structures with abrupt interfaces and homogenous layer thicknesses in lateral and vertical direction. Reflectance measurements of DBRs designed for the blue and near UV-spectral region show a narrow stopband with a maximum reflectivity of 85% at 418 nm and even 95% at 370 nm. InGaN/GaN multi-quantum well structures grown on top of such DBRs exhibit narrow emission spectra with linewidths below 3 nm and significantly increased emission intensity.

  18. Improved two-dimensional electron mobility in asymmetric barrier delta-doped GaAs/AlGaAs modulation-doped field-effect transistor structures

    NASA Astrophysics Data System (ADS)

    Das, Sudhakar; Mohapatra, Meryleen; Nayak, Rasmita K.; Panda, Ajit K.; Sahu, Trinath

    2017-03-01

    We study the enhancement of electron mobility μ in barrier delta-doped GaAs/AlGaAs quantum-well-based modulation-doped field-effect transistor (MODFET) structures. We asymmetrically vary the doping concentrations N d1 and N d2 in the barriers on the substrate and surface sides, respectively, to obtain a nonlinear enhancement of μ as a function of the well width w through multi-subband effects. We show that an increase in doping concentration increases the surface electron density N s, which in turn enhances μ. Interchanging N d1 and N d2 leads to no change in N s but rather, an enhancement of μ as a function of w for N d2 > N d1 owing to asymmetric variation of subband wave functions, thereby implying a higher channel conductivity in a surface-doped structure than in an inverted doped structure. By keeping (N d1 + N d2) unchanged, the conductivity of a single-channel MODFET, N d1 (N d2) ≠ 0 and N d2 (N d1) = 0, can be enhanced by considering a MODFET based on an asymmetrically doped (N d1 ≠ N d2 ≠ 0) quantum well structure. We show that the highest N s and μ product for these structures occurs almost before the onset of the occupation of the second subband. Our analysis of the effect of asymmetric doping profiles on channel conductivity can be utilized for the performance improvement of MODFET-like devices.

  19. Design of lateral heterostructure from arsenene and antimonene

    NASA Astrophysics Data System (ADS)

    Sun, Qilong; Dai, Ying; Ma, Yandong; Yin, Na; Wei, Wei; Yu, Lin; Huang, Baibiao

    2016-09-01

    Lateral heterostructures fabricated by two-dimensional building blocks have opened up exciting realms in material science and device physics. Identifying suitable materials for creating such heterostructures is urgently needed for the next-generation devices. Here, we demonstrate a novel type of seamless lateral heterostructures with excellent stabilities formed within pristine arsenene and antimonene. We find that these heterostructures could possess direct and reduced energy gaps without any modulations. Moreover, the highly coveted type-II alignment and the high carrier mobility are also identified, marking the enhanced quantum efficiency. The tensile strain can result in efficient bandgap engineering. Besides, the proposed critical condition for favored direct energy gaps would have a guiding significance on the subsequent works. Generally, our predictions not only introduce new vitality into lateral heterostructures, enriching available candidate materials in this field, but also highlight the potential of these lateral heterostructures as appealing materials for future devices.

  20. Characterization of Si (sub X)Ge (sub 1-x)/Si Heterostructures for Device Applications Using Spectroscopic Ellipsometry

    NASA Technical Reports Server (NTRS)

    Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.; Tanner, M.; Wang, K. L.; Mena, R. A.; Young, P. G.

    1993-01-01

    Spectroscopic ellipsometry (SE) characterization of several complex Si (sub X)Ge (sub 1-x)/Si heterostructures prepared for device fabrication, including structures for heterojunction bipolar transistors (HBT), p-type and n-type heterostructure modulation doped field effect transistors, has been performed. We have shown that SE can simultaneously determine all active layer thicknesses, Si (sub X)Ge (sub 1-x) compositions, and the oxide overlayer thickness, with only a general knowledge of the structure topology needed a priori. The characterization of HBT material included the SE analysis of a Si (sub X)Ge (sub 1-x) layer deeply buried (600 nanometers) under the silicon emitter and cap layers. In the SE analysis of n-type heterostructures, we examined for the first time a silicon layer under tensile strain. We found that an excellent fit can be obtained using optical constants of unstrained silicon to represent the strained silicon conduction layer. We also used SE to measure lateral sample homogeneity, providing quantitative identification of the inhomogeneous layer. Surface overlayers resulting from prior sample processing were also detected and measured quantitatively. These results should allow SE to be used extensively as a non-destructive means of characterizing Si (sub X)Ge (sub 1-x)/Si heterostructures prior to device fabrication and testing.

  1. Different pulse pattern generation by frequency detuning in pulse modulated actively mode-locked ytterbium doped fiber laser

    NASA Astrophysics Data System (ADS)

    Chen, He; Chen, Sheng-Ping; Si, Lei; Zhang, Bin; Jiang, Zong-Fu

    2015-10-01

    We report the results of our recent experimental investigation of the modulation frequency detuning effect on the output pulse dynamics in a pulse modulated actively mode-locked ytterbium doped fiber laser. The experimental study shows the existence of five different mode-locking states that mainly depend on the modulation frequency detuning, which are: (a) amplitude-even harmonic/fundamental mode-locking, (b) Q-switched harmonic/fundamental mode-locking, (c) sinusoidal wave modulation mode, (d) pulses bundle state, and (e) noise-like state. A detailed experimental characterization of the output pulses dynamics in each operating mode is presented.

  2. Atomic Scale Chemical and Structural Characterization of Ceramic Oxide Heterostructure Interfaces

    SciTech Connect

    Singh, R. K.

    2003-04-16

    The research plan was divided into three tasks: (a) growth of oxide heterostructures for interface engineering using standard thin film deposition techniques, (b) atomic level characterization of oxide heterostructure using such techniques as STEM-2 combined with AFM/STM and conventional high-resolution microscopy (HRTEM), and (c) property measurements of aspects important to oxide heterostructures using standard characterization methods, including dielectric properties and dynamic cathodoluminescence measurements. Each of these topics were further classified on the basis of type of oxide heterostructure. Type I oxide heterostructures consisted of active dielectric layers, including the materials Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST), Y{sub 2}O{sub 3} and ZrO{sub 2}. Type II heterostructures consisted of ferroelectric active layers such as lanthanum manganate and Type III heterostructures consist of phosphor oxide active layers such as Eu-doped Y{sub 2}O{sub 3}.

  3. Isoelectronic tungsten doping in monolayer MoSe2 for carrier type modulation

    SciTech Connect

    Li, Xufan; Lin, Ming -Wei; Basile, Leonardo; Hus, Saban M.; Puretzky, Alexander A.; Lee, Jaekwang; Kuo, Yen -Chien; Chang, Lo -Yueh; Wang, Kai; Idrobo, Juan C.; Li, An -Ping; Chen, Chia-Hao; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai

    2016-07-06

    Doping and alloying are effective ways to engineer the band structure and modulate the optoelectronic functionality of monolayer transition metal dichalcogenides (TMDs). In this work, we explore the synthesis and electronic properties of monolayer Mo1-xWxSe2 (0 < x < 0.18) alloys with almost 100% alloying degree. The isoelectronic substitutional doping of tungsten for molybdenum in the monolayer MoSe2 is shown to suppress its intrinsically n-type conduction behavior, with p-type conduction gradually emerging to become dominant with increasing W concentration in the alloys. Atomic resolution Z-contrast electron microscopy show that W is shown to substitute directly for Mo without the introduction of noticeable vacancy or interstitial defects, however with randomly-distributed W-rich regions ~2 nm in diameter. Scanning tunneling microscopy/spectroscopy measurements reveal that these W-rich regions exhibit a local band structure with the valence band maximum (VBM) closer to the Fermi level as compared with the Mo-rich regions in the monolayer Mo1-xWxSe2 crystal. These localized upshifts of the VBM in the local band structure appear responsible for the overall p-type behavior observed for the monolayer Mo1-xWxSe2 crystals. Stacked monolayers of n-type MoSe2 and p-type Mo1-xWxSe2 were demonstrated to form atomically thin, vertically stacked p n homojunctions with gate-tunable characteristics, which appear useful for future optoelectronic applications. Lastly, these results indicate that alloying with isoelectronic dopant atoms appears to be an effective and advantageous alternate strategy to doping or alloying with electron donors or acceptors in two-dimensional TMDs.

  4. Isoelectronic tungsten doping in monolayer MoSe2 for carrier type modulation

    DOE PAGES

    Li, Xufan; Lin, Ming -Wei; Basile, Leonardo; ...

    2016-07-06

    Doping and alloying are effective ways to engineer the band structure and modulate the optoelectronic functionality of monolayer transition metal dichalcogenides (TMDs). In this work, we explore the synthesis and electronic properties of monolayer Mo1-xWxSe2 (0 < x < 0.18) alloys with almost 100% alloying degree. The isoelectronic substitutional doping of tungsten for molybdenum in the monolayer MoSe2 is shown to suppress its intrinsically n-type conduction behavior, with p-type conduction gradually emerging to become dominant with increasing W concentration in the alloys. Atomic resolution Z-contrast electron microscopy show that W is shown to substitute directly for Mo without the introductionmore » of noticeable vacancy or interstitial defects, however with randomly-distributed W-rich regions ~2 nm in diameter. Scanning tunneling microscopy/spectroscopy measurements reveal that these W-rich regions exhibit a local band structure with the valence band maximum (VBM) closer to the Fermi level as compared with the Mo-rich regions in the monolayer Mo1-xWxSe2 crystal. These localized upshifts of the VBM in the local band structure appear responsible for the overall p-type behavior observed for the monolayer Mo1-xWxSe2 crystals. Stacked monolayers of n-type MoSe2 and p-type Mo1-xWxSe2 were demonstrated to form atomically thin, vertically stacked p n homojunctions with gate-tunable characteristics, which appear useful for future optoelectronic applications. Lastly, these results indicate that alloying with isoelectronic dopant atoms appears to be an effective and advantageous alternate strategy to doping or alloying with electron donors or acceptors in two-dimensional TMDs.« less

  5. Silicon Germanium Strained Layers and Heterostructures

    NASA Astrophysics Data System (ADS)

    Willander, M.; Nur, O.; Jain, S. C.

    2004-01-01

    The integration of strained-Si1 xGex into Si technology has enhanced the performance and extended the functionality of Si based circuits. The improvement of device performance is observed in both AC as well as DC characteristics of these devices. The category of such devices includes field effect as well as bipolar families. Speed performance in some based circuits has reached limits previously dominated by III-V heterostructures based devices. In addition, for some optoelectronics applications including photodetectors it is now possible to easily integrate strained-Si1 xGex based optical devices into standard Silicon technology. The impact of integrating strained and relaxed Si1 xGex alloys into Si technology is important. It has lead to stimulate Si research as well as offers easy options for performances that requires very complicated and costly process if pure Si has to be used. In this paper we start by discussing the strain and stability of Si1 xGex alloys. The origin and the process responsible for transient enhanced diffusion (TED) in highly doped Si containing layers will be mentioned. Due to the importance of TED for thin highly doped Boron strained-Si1 xGex layers and its degrading consequences, possible suppression design methods will be presented. Quantum well pchannel MOSFETs (QW-PMOSFETs) based on thin buried QW are solution to the low speed and weak current derivability. Different aspects of designing these devices for a better performance are briefly reviewed. Other FETs based on tensile strained Si on relaxed Si1 xGex for n-channel and modulation doped field effect transistors (MODFETs) showed excellent performance. Record AC performance well above 200GHz for fmax is already observed and this record is expected to increase in the coming years. Heterojunction bipolar transistors (HPTs) with thin strained-Si1 xGex highly doped base have lead to optimize the performance of the bipolar technology for many applications easily. The strategies of design

  6. Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

    SciTech Connect

    Shen, Youde; Chen, Renjie; Yu, Xuechao; Wang, Qijie; Jungjohann, Katherine L.; Dayeh, Shadi A.; Wu, Tom

    2016-06-02

    Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor–liquid–solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. In this paper, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs–Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs–Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. Finally, these results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices.

  7. Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

    DOE PAGES

    Shen, Youde; Chen, Renjie; Yu, Xuechao; ...

    2016-06-02

    Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor–liquid–solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. In this paper, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs–Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed tomore » impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs–Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. Finally, these results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices.« less

  8. Gibbs-Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth.

    PubMed

    Shen, Youde; Chen, Renjie; Yu, Xuechao; Wang, Qijie; Jungjohann, Katherine L; Dayeh, Shadi A; Wu, Tom

    2016-07-13

    Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor-liquid-solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. Here, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs-Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs-Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. These results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices.

  9. Sulfur-doped microstructures formed in silicon using a modulated continuous wave laser

    NASA Astrophysics Data System (ADS)

    Ayachitula, R.; Brandt, L.; Chilton, M.; Knize, R. J.; Patterson, B. M.

    2013-05-01

    We demonstrate the enhanced optical properties of silicon microstructures formed by irradiation of a silicon surface by a modulated continuous wave (CW) laser beam in the presence of SF6. The microstructures are doped with about 0.6% sulfur, which extends the absorption well below the 1.1 μm bandgap of crystalline silicon and results in a 60% increase in the absorption of infrared radiation. This enhanced absorption as a result of these microstructures has been studied over the past decade in an effort to create high responsivity detectors and night vision goggles and improve the efficiency of solar cells. The enhanced optical absorption data we demonstrate are comparable to observations made in previous studies which were performed using more expensive and complicated laser systems such as regeneratively-amplified femtosecond pulsed laser systems and nanosecond and picosecond pulsed excimer lasers.

  10. Quantum transport in neutron-irradiated modulation-doped heterojunctions. I. Fast neutrons

    SciTech Connect

    Jin, W.; Zhou, J.; Huang, Y.; Cai, L.

    1988-12-15

    We have investigated the characteristics of low-temperature quantum transport in Al/sub x/Ga/sub 1-//sub x/As/GaAs modulation-doped heterojunctions irradiated by fast neutrons of about 14 MeV energy. The concentration and the mobility of the two-dimensional electron gas (2D EG) under low magnetic fields decrease with increase in the concentrations of scatterers, such as ionized impurities, lattice defects, and interface roughness. On the other hand, under strong magnetic fields, the Hall plateau broadening associated with the Landau localized states, and the Shubnikov--de Hass (SdH) oscillation enhancement associated with the Landau extended states, increase markedly after fast-neutron irradiation.

  11. Finite-temperature effects on conductance modulation by local doping in graphene with multiple magnetic barriers

    NASA Astrophysics Data System (ADS)

    Myoung, Nojoon; Lidorikis, Elefterios

    2015-12-01

    The electronic and transport properties of graphene modulated by magnetic barrier arrays are derived at finite temperatures. Prominent conductance gaps, originating from quantum interference effects are found in the periodic array case. When a structural defect is inserted in the array, sharp defect modes of high conductance appear within the conductance gaps. These modes are shifted by local doping in the defect region, resulting in large contrast in the ballistic conductance of graphene sheet. In general it is found that sensitivity is strongly dependent on temperature due to smoothing out of the defect-induced peaks and transport gaps. This temperature dependence, however, offers the added capability for sub-mK temperature sensing resolution, and thus an opportunity towards ultra-sensitive combined electrochemical-calorimetric sensing.

  12. Long-lived electron spins in a modulation doped (100) GaAs quantum well

    NASA Astrophysics Data System (ADS)

    Colton, John; Meyer, David; Clark, Ken; Craft, Daniel; Tanner, Jane; Park, Tyler; White, Phil

    2013-03-01

    We have measured T1 spin lifetimes of a 14 nm modulation-doped (100) GaAs quantum well using a time-resolved pump-probe Kerr rotation technique. The quantum well was selected by tuning the wavelength of the probe laser. T1 lifetimes in excess of 1 microsecond were measured at 1.5 K and 5.5 T, exceeding the typical T2* lifetimes that have been measured in GaAs and II-VI quantum wells by orders of magnitude. We observed effects from nuclear polarization, which were largely removable by simultaneous nuclear magnetic resonance, along with two distinct lifetimes under some conditions that likely result from probing two differently-localized subsets of electrons.

  13. Long-lived electron spins in a modulation doped (100) GaAs quantum well

    NASA Astrophysics Data System (ADS)

    Colton, J. S.; Meyer, D.; Clark, K.; Craft, D.; Cutler, J.; Park, T.; White, P.

    2012-10-01

    We have measured T1 spin lifetimes of a 14 nm modulation-doped (100) GaAs quantum well using a time-resolved pump-probe Kerr rotation technique. The quantum well was selected by tuning the wavelength of the probe laser. T1 lifetimes in excess of 1 μs were measured at 1.5 K and 5.5 T, exceeding the typical T2* lifetimes that have been measured in GaAs and II-VI quantum wells by orders of magnitude. We observed effects from nuclear polarization, which were largely removable by simultaneous nuclear magnetic resonance, along with two distinct lifetimes under some conditions that likely result from probing two differently localized subsets of electrons.

  14. Effect of free-carrier concentration and optical injection on carrier lifetimes in undoped and iodine doped CdMgTe/CdSeTe double heterostructures grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sohal, S.; Edirisooriya, M.; Ogedengbe, O. S.; Petersen, J. E.; Swartz, C. H.; LeBlanc, E. G.; Myers, T. H.; Li, J. V.; Holtz, M.

    2016-12-01

    Time-resolved and time integrated photoluminescence (PL) studies are reported for undoped and doped CdMgTe/CdSeTe double heterostructures (DHs) grown by molecular beam epitaxy. Undoped DHs are studied with absorber layer thickness varying from 0.5 to 2.5 µm. The n-type free-carrier concentration is varied ~7  ×  1015, 8.4  ×  1016, and 8.4  ×  1017 cm-3 using iodine as a dopant in different absorber layer thicknesses (0.25-2.0 µm). Optical injection is varied from 1  ×  1010 to 3  ×  1011 photons/pulse/cm2, corresponding to the initial injection of photo-carriers up to ~8  ×  1015 cm-3, to examine the effects of excess carrier concentration on the PL lifetimes. Undoped DHs exhibit an initial rapid decay followed by a slower dependence with carrier lifetimes up to ~485 ns. The dependence of carrier lifetimes on the thickness of the absorber layers (0.5-2.5 µm) suggests interface recombination velocities ({{v}\\operatorname{int}}~ ) ~ 1288 and 238 cm s-1 in the initial and later decay times, respectively, corresponding to high and low photo-carrier concentrations. The Shockley-Read-Hall model is used to describe the results in which variations are observed in {{v}\\operatorname{int}}~ for undoped DHs. The lifetimes of doped DHs show a consistent trend with thickness. The {{v}\\operatorname{int}}~ ~ 80-200 cm s-1 is estimated for doping n ~ 7  ×  1015 cm-3 and 240-410 cm s-1 for n ~ 8.4  ×  1016 cm-3. The observed decrease in carrier lifetimes with increasing n is consistent with growing importance of the radiative recombination rate due to the excess carrier concentration. The effect of carrier concentration on the PL spectrum is also discussed.

  15. Study and Analysis of AlGaAs/GaAs Modulation Doped Field-Effect Transistors Incorporating P-Type Schottky Gate Barriers.

    DTIC Science & Technology

    1985-12-01

    Doped Structures (Al Ga As/GaAs) and Correlation x -x with Monte Carlo Calculations (GaAs)," Applied Physics Letters 41(3):277 (1 August 1982). 12...Transistors," Applied Physics Letters 40:879-881 (15 May 1982). 13. Drummond, T., W. Kopp, M. Keever, H. Morkoc, and A. Cho. "Electron Mobility in...34Mobility of the Two-Dimensional Electron Gas in GaAs-AlGaAs Heterostructures," Applied Physics Letters 45:695-697, (15 Sep 1984). 37. Linh, N., P

  16. The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures

    SciTech Connect

    Seredin, P. V.; Gordienko, N. N.; Glotov, A. V.; Zhurbina, I. A.; Domashevskaya, E. P.; Arsent'ev, I. N. Shishkov, M. V.

    2009-08-15

    In structures with a porous buffer layer, residual internal stresses caused by a mismatch between the crystal-lattice parameters of the epitaxial GaInP alloy and the GaAs substrate are redistributed to the porous layer that acts as a buffer and is conducive to disappearance of internal stresses. Doping of the epitaxial layer with dysprosium exerts a similar effect on the internal stresses in the film-substrate structure.

  17. Modulation of magnetic damping constant of Fe2Co films by heavy doping of rare-earth Yb

    NASA Astrophysics Data System (ADS)

    Wu, Kai; Tang, Minghong; Li, Dong; Guo, Xiaobin; Cui, Baoshan; Yun, Jijun; Zuo, Yalu; Xi, L.; Zhang, Z. Z.

    2017-04-01

    The effect of rare-earth element Yb doping on modulating the magnetic properties, especially the damping constant, is investigated in a series of amorphous (Fe2Co)(1‑x)Yb x thin films by the time-resolved magneto-optical Kerr effect at room temperature. A linear decrease of the saturation magnetization and in-plane uniaxial anisotropy field with the increase of x was observed and explained by the diluted effect of non-magnetic Yb doping. The magnetic damping constant performs a remarkable increase with Yb concentration. X-ray photoelectron spectroscopy reveals partial oxidation of Yb, which has large orbital moment and the associated large spin–orbital coupling (SOC) strength and may be responsible for the increased damping constant in contrast with the expected weak SOC and associated low damping constant of metallic Yb doping.

  18. Anisotropic modulation of magnetic properties and the memory effect in a wide-band (011)-Pr0.7Sr0.3MnO3/PMN-PT heterostructure

    NASA Astrophysics Data System (ADS)

    Zhao, Ying-Ying; Wang, Jing; Kuang, Hao; Hu, Feng-Xia; Liu, Yao; Wu, Rong-Rong; Zhang, Xi-Xiang; Sun, Ji-Rong; Shen, Bao-Gen

    2015-04-01

    Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezostrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remains a challenge. Here, we report on the electric-field control of magnetic properties in wide-band (011)-Pr0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures. By introducing an electric-field-induced in-plane anisotropic strain field during the cooling process from room temperature, we observe an in-plane anisotropic, nonvolatile modulation of magnetic properties in a wide-band Pr0.7Sr0.3MnO3 film at low temperatures. We attribute this anisotropic memory effect to the preferential seeding and growth of ferromagnetic (FM) domains under the anisotropic strain field. In addition, we find that the anisotropic, nonvolatile modulation of magnetic properties gradually diminishes as the temperature approaches FM transition, indicating that the nonvolatile memory effect is temperature dependent. By taking into account the competition between thermal energy and the potential barrier of the metastable magnetic state induced by the anisotropic strain field, this distinct memory effect is well explained, which provides a promising approach for designing novel electric-writing magnetic memories.

  19. Anisotropic modulation of magnetic properties and the memory effect in a wide-band (011)-Pr0.7Sr0.3MnO3/PMN-PT heterostructure.

    PubMed

    Zhao, Ying-Ying; Wang, Jing; Kuang, Hao; Hu, Feng-Xia; Liu, Yao; Wu, Rong-Rong; Zhang, Xi-Xiang; Sun, Ji-Rong; Shen, Bao-Gen

    2015-04-24

    Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezostrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remains a challenge. Here, we report on the electric-field control of magnetic properties in wide-band (011)-Pr0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures. By introducing an electric-field-induced in-plane anisotropic strain field during the cooling process from room temperature, we observe an in-plane anisotropic, nonvolatile modulation of magnetic properties in a wide-band Pr0.7Sr0.3MnO3 film at low temperatures. We attribute this anisotropic memory effect to the preferential seeding and growth of ferromagnetic (FM) domains under the anisotropic strain field. In addition, we find that the anisotropic, nonvolatile modulation of magnetic properties gradually diminishes as the temperature approaches FM transition, indicating that the nonvolatile memory effect is temperature dependent. By taking into account the competition between thermal energy and the potential barrier of the metastable magnetic state induced by the anisotropic strain field, this distinct memory effect is well explained, which provides a promising approach for designing novel electric-writing magnetic memories.

  20. Spatial modulation spectroscopy for imaging and quantitative analysis of single dye-doped organic nanoparticles inside cells

    NASA Astrophysics Data System (ADS)

    Devadas, Mary Sajini; Devkota, Tuphan; Guha, Samit; Shaw, Scott K.; Smith, Bradley D.; Hartland, Gregory V.

    2015-05-01

    Imaging of non-fluorescent nanoparticles in complex biological environments, such as the cell cytosol, is a challenging problem. For metal nanoparticles, Rayleigh scattering methods can be used, but for organic nanoparticles, such as dye-doped polymer beads or lipid nanoparticles, light scattering does not provide good contrast. In this paper, spatial modulation spectroscopy (SMS) is used to image single organic nanoparticles doped with non-fluorescent, near-IR croconaine dye. SMS is a quantitative imaging technique that yields the absolute extinction cross-section of the nanoparticles, which can be used to determine the number of dye molecules per particle. SMS images were recorded for particles within EMT-6 breast cancer cells. The measurements allowed mapping of the nanoparticle location and the amount of dye in a single cell. The results demonstrate how SMS can facilitate efforts to optimize dye-doped nanoparticles for effective photothermal therapy of cancer.Imaging of non-fluorescent nanoparticles in complex biological environments, such as the cell cytosol, is a challenging problem. For metal nanoparticles, Rayleigh scattering methods can be used, but for organic nanoparticles, such as dye-doped polymer beads or lipid nanoparticles, light scattering does not provide good contrast. In this paper, spatial modulation spectroscopy (SMS) is used to image single organic nanoparticles doped with non-fluorescent, near-IR croconaine dye. SMS is a quantitative imaging technique that yields the absolute extinction cross-section of the nanoparticles, which can be used to determine the number of dye molecules per particle. SMS images were recorded for particles within EMT-6 breast cancer cells. The measurements allowed mapping of the nanoparticle location and the amount of dye in a single cell. The results demonstrate how SMS can facilitate efforts to optimize dye-doped nanoparticles for effective photothermal therapy of cancer. Electronic supplementary information (ESI

  1. Photodetectors based on heterostructures for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Nabet, Bahram; Cola, Adriano; Cataldo, Andrea; Chen, Xiying; Quaranta, Fabio

    2002-09-01

    In this work we describe a family of optical devices based on heterojunction and heterodimensional structures and we investigate their static and dynamic properties. Such devices are good candidates, due to their high performance, for utilization as the sensing element for the realization of sensors in the fields of telecommunications, remote sensing, LIDAR and medical imaging. First, we present a Heterostructure Metal-Semiconductor-Metal (HMSM) photodetectors that employ a uniformly doped GaAs/AlGaAs heterojunction for the dual purpose of barrier height enhancement and creating an internal electric field that aids in the transport and collection of the photogenerated electrons. In this first family of devices, two doping levels are compared showing the direct effect of the aiding field due to modulation doping. Subsequently, we analyze a novel Resonant-Cavity-Enhanced (RCE) HMSM photodetector in which a Distributed Bragg Reflector (DBR) is employed in order to reduce the thickness of the absorption layer thus achieving good responsivity and high speed as well as wavelength selectivity. Current-voltage, current-temperature, photocurrent spectra, high-speed time response, and on-wafer frequency domain measurements point out the better performance of this last family of detectors, as they can operate in tens of Giga-Hertz range with low dark current and high responsivity. Particularly, the I-V curves show a very low dark current (around 10 picoamps at operative biases); C-V measurements highlight the low geometrical capacitance values; the photocurrent spectrum shows a clear peak at 850 nm wavelength, while time response measurements give a 3 dB bandwidth of about 30 GHz. Small signal model based on frequency domain data is also extracted in order to facilitate future photoreceiver design. Furthermore, two-dimensional numerical simulations have been carried out in order to predict the electrical properties of these detectors. Combination of very low dark current and

  2. Modulation-doped growth of mosaic graphene with single-crystalline p–n junctions for efficient photocurrent generation

    PubMed Central

    Yan, Kai; Wu, Di; Peng, Hailin; Jin, Li; Fu, Qiang; Bao, Xinhe; Liu, Zhongfan

    2012-01-01

    Device applications of graphene such as ultrafast transistors and photodetectors benefit from the combination of both high-quality p- and n-doped components prepared in a large-scale manner with spatial control and seamless connection. Here we develop a well-controlled chemical vapour deposition process for direct growth of mosaic graphene. Mosaic graphene is produced in large-area monolayers with spatially modulated, stable and uniform doping, and shows considerably high room temperature carrier mobility of ~5,000 cm2 V−1 s−1 in intrinsic portion and ~2,500 cm2 V−1 s−1 in nitrogen-doped portion. The unchanged crystalline registry during modulation doping indicates the single-crystalline nature of p–n junctions. Efficient hot carrier-assisted photocurrent was generated by laser excitation at the junction under ambient conditions. This study provides a facile avenue for large-scale synthesis of single-crystalline graphene p–n junctions, allowing for batch fabrication and integration of high-efficiency optoelectronic and electronic devices within the atomically thin film. PMID:23232410

  3. Novel mesoporous P-doped graphitic carbon nitride nanosheets coupled with ZnIn2S4 nanosheets as efficient visible light driven heterostructures with remarkably enhanced photo-reduction activity

    NASA Astrophysics Data System (ADS)

    Chen, Wei; Liu, Tian-Yu; Huang, Ting; Liu, Xiao-Heng; Yang, Xu-Jie

    2016-02-01

    In this report, we rationally designed and fabricated P-C3N4/ZnIn2S4 nanocomposites by in situ immobilizing ZnIn2S4 nanosheets onto the surface of mesoporous P-doped graphite carbon nitrogen (P-C3N4) nanosheets in a mixed solvothermal environment; their application to the photoreduction of 4-nitroaniline was used to estimate the photocatalytic performance. Different to the template route, here the mesoporous P-C3N4 nanosheets were prepared with a template-free strategy. The as-fabricated P-C3N4/ZnIn2S4 nanocomposites were systematically characterized by analyzing the phase structure, chemical components, electronic and optical properties and separation of charge carrier pairs. More importantly, these P-C3N4/ZnIn2S4 heterostructures have been proven to be highly efficient visible light responsive photocatalysts for photo-reduction, and meanwhile exhibit excellent photo-stability during recycling runs. The sufficient evidence reveals that the significantly improved photocatalytic performance is mainly attributed to the more efficient charge carrier separation based on the construction of a close heterogeneous interface. This work may provide new insights into the utilization of P-C3N4/ZnIn2S4 nanocomposites as visible light driven photocatalysts for comprehensive organic transformations in the field of fine chemical engineering.In this report, we rationally designed and fabricated P-C3N4/ZnIn2S4 nanocomposites by in situ immobilizing ZnIn2S4 nanosheets onto the surface of mesoporous P-doped graphite carbon nitrogen (P-C3N4) nanosheets in a mixed solvothermal environment; their application to the photoreduction of 4-nitroaniline was used to estimate the photocatalytic performance. Different to the template route, here the mesoporous P-C3N4 nanosheets were prepared with a template-free strategy. The as-fabricated P-C3N4/ZnIn2S4 nanocomposites were systematically characterized by analyzing the phase structure, chemical components, electronic and optical properties and

  4. Transparent conductivity modulation of ZnO by group-IVA doping

    NASA Astrophysics Data System (ADS)

    Liu, J.; Fan, X. F.; Sun, C. Q.; Zhu, W.

    2016-04-01

    We examined the effect of group-IVA doping on the electronic structure and transmittance of ZnO using first-principle calculations. All these doped ZnO materials are found to perform n-type conductive behavior. Si-doped ZnO and Pb-doped ZnO are found to have larger optical band gap than those of Ge-doped ZnO and Sn-doped ZnO. The transmittance of Si-doped ZnO is found to be high in both UV and visible region. The enhancement of UV region transmittance can be attributed to the enhanced optical band gap, while the reduction of visible region transmittance is due to the intraband optical transition.

  5. Pulsed ytterbium-doped fibre laser with a combined modulator based on single-wall carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Khudyakov, D. V.; Borodkin, A. A.; Lobach, A. S.; Vartapetov, S. K.

    2015-09-01

    This paper describes an all-normal-dispersion pulsed ytterbium-doped fibre ring laser mode-locked by a nonlinear combined modulator based on single-wall carbon nanotubes. We have demonstrated 1.7-ps pulse generation at 1.04 μm with a repetition rate of 35.6 MHz. At the laser output, the pulses were compressed to 180 fs. We have examined an intracavity nonlinear modulator which utilises nonlinear polarisation ellipse rotation in conjunction with a saturable absorber in the form of a polymer-matrix composite film containing single-wall carbon nanotubes.

  6. Pulsed ytterbium-doped fibre laser with a combined modulator based on single-wall carbon nanotubes

    SciTech Connect

    Khudyakov, D V; Borodkin, A A; Vartapetov, S K; Lobach, A S

    2015-09-30

    This paper describes an all-normal-dispersion pulsed ytterbium-doped fibre ring laser mode-locked by a nonlinear combined modulator based on single-wall carbon nanotubes. We have demonstrated 1.7-ps pulse generation at 1.04 μm with a repetition rate of 35.6 MHz. At the laser output, the pulses were compressed to 180 fs. We have examined an intracavity nonlinear modulator which utilises nonlinear polarisation ellipse rotation in conjunction with a saturable absorber in the form of a polymer-matrix composite film containing single-wall carbon nanotubes. (lasers)

  7. Gate-tunable high mobility remote-doped InSb/In{sub 1−x}Al{sub x}Sb quantum well heterostructures

    SciTech Connect

    Yi, Wei E-mail: MSokolich@hrl.com; Kiselev, Andrey A.; Thorp, Jacob; Noah, Ramsey; Nguyen, Binh-Minh; Bui, Steven; Rajavel, Rajesh D.; Hussain, Tahir; Gyure, Mark F.; Sokolich, Marko E-mail: MSokolich@hrl.com; Kratz, Philip; Qian, Qi; Manfra, Michael J.; Pribiag, Vlad S.; Kouwenhoven, Leo P.; Marcus, Charles M.

    2015-04-06

    Gate-tunable high-mobility InSb/In{sub 1−x}Al{sub x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm{sup 2}/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO{sub 2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1 Ω·mm is achieved at 1.8 K.

  8. Blackbody-like emission of terahertz radiation from AlGaN/GaN heterostructure under electron heating in lateral electric field

    NASA Astrophysics Data System (ADS)

    Shalygin, V. A.; Vorobjev, L. E.; Firsov, D. A.; Sofronov, A. N.; Melentyev, G. A.; Lundin, W. V.; Nikolaev, A. E.; Sakharov, A. V.; Tsatsulnikov, A. F.

    2011-04-01

    The authors report on the observation and study of terahertz radiation emission from modulation-doped AlGaN/GaN heterostructure under conditions of heating of a two-dimensional electron gas in the lateral electric field. The experimental results are compared with the theoretical model of blackbody-like emission from hot two-dimensional electrons. Complementary transport measurements and a theoretical simulation were carried out to determine the dependence of effective electron temperature on electric field. The role of nonequilibrium optical phonon accumulation is discussed.

  9. Dynamic modulation of electronic properties of graphene by localized carbon doping using focused electron beam induced deposition.

    PubMed

    Kim, S; Russell, M; Henry, M; Kim, S S; Naik, R R; Voevodin, A A; Jang, S S; Tsukruk, V V; Fedorov, A G

    2015-09-28

    We report on the first demonstration of controllable carbon doping of graphene to engineer local electronic properties of a graphene conduction channel using focused electron beam induced deposition (FEBID). Electrical measurements indicate that an "n-p-n" junction on graphene conduction channel is formed by partial carbon deposition near the source and drain metal contacts by low energy (<50 eV) secondary electrons due to inelastic collisions of long range backscattered primary electrons generated from a low dose of high energy (25 keV) electron beam (1 × 10(18) e(-) per cm(2)). Detailed AFM imaging provides direct evidence of the new mechanism responsible for dynamic evolution of the locally varying graphene doping. The FEBID carbon atoms, which are physisorbed and weakly bound to graphene, diffuse towards the middle of graphene conduction channel due to their surface chemical potential gradient, resulting in negative shift of Dirac voltage. Increasing a primary electron dose to 1 × 10(19) e(-) per cm(2) results in a significant increase of carbon deposition, such that it covers the entire graphene conduction channel at high surface density, leading to n-doping of graphene channel. Collectively, these findings establish a unique capability of FEBID technique to dynamically modulate the doping state of graphene, thus enabling a new route to resist-free, "direct-write" functional patterning of graphene-based electronic devices with potential for on-demand re-configurability.

  10. Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer

    SciTech Connect

    Shim, Seong Hoon; Kim, Hyung-jun; Koo, Hyun Cheol; Lee, Yun-Hi; Chang, Joonyeon

    2015-09-07

    We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3 mV at 10 K and 0.8 mV even at 400 K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77 μm, respectively, at 200 K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.

  11. Heterostructure integrated thermionic coolers

    NASA Astrophysics Data System (ADS)

    Shakouri, Ali; Bowers, John E.

    1997-09-01

    Thermionic emission in heterostructures is proposed for integrated cooling of high power electronic and optoelectronic devices. This evaporative cooling is achieved by selective emission of hot electrons over a barrier layer from the cathode to the anode. It is shown that with available high electron mobility and low thermal conductivity materials, and with optimized conduction band offsets in heterostructures, single-stage room temperature cooling of up to 20°-40° over thicknesses of the order of microns is possible.

  12. Modeling gate modulation effects on FET electrical characteristics with arbitrary doping profiles

    NASA Astrophysics Data System (ADS)

    Chiang, Min-Wen; Choma, J.; Kao, C.; Liao, J.

    1984-09-01

    A generalized approach for modeling the device characteristics of a JFET/MESFET, depletion MOSFET and MESFET/BUFFER structure with non-uniform doping profiles is derived from the depletion MOSFET viewpoint including the oxide layer explicitly. The results are exemplified for the power-law doping case with different oxide thickness and different dopant gradient.

  13. Novel Engineered Compound Semiconductor Heterostructures for Advanced Electronics Applications

    DTIC Science & Technology

    1992-06-22

    AlxGal.xAs-GaAs quantum well heterostructures. L.J. Guido, B.T. Cunningham, D.W. Nam, K.C. Hsieh, W.E. Plano , J.S. Major, Jr., E.J. Vesely, A.R. Sugg, N...in heavily carbon-doped Al, Ga.,__As-GaAs quantum well heterostructures L. J. Guido, B. T. Cunningham, 0. W. Nam,a K. C. Hsieh, W. E. Plano , J. S...American institute of Physics 741 193 ANOMALOUS LUMINESCENCE PROPERTIES OF GaAs GROWN BY MOLECULAR BEAM EPITAXY I. SZAFRANEK, MA. PLANO , MJ. MCCOLLUM

  14. High mobility one- and two-dimensional electron systems in nanowire-based quantum heterostructures.

    PubMed

    Funk, Stefan; Royo, Miguel; Zardo, Ilaria; Rudolph, Daniel; Morkötter, Stefanie; Mayer, Benedikt; Becker, Jonathan; Bechtold, Alexander; Matich, Sonja; Döblinger, Markus; Bichler, Max; Koblmüller, Gregor; Finley, Jonathan J; Bertoni, Andrea; Goldoni, Guido; Abstreiter, Gerhard

    2013-01-01

    Free-standing semiconductor nanowires in combination with advanced gate-architectures hold an exceptional promise as miniaturized building blocks in future integrated circuits. However, semiconductor nanowires are often corrupted by an increased number of close-by surface states, which are detrimental with respect to their optical and electronic properties. This conceptual challenge hampers their potentials in high-speed electronics and therefore new concepts are needed in order to enhance carrier mobilities. We have introduced a novel type of core-shell nanowire heterostructures that incorporate modulation or remote doping and hence may lead to high-mobility electrons. We demonstrate the validity of such concepts using inelastic light scattering to study single modulation-doped GaAs/Al0.16Ga0.84As core-multishell nanowires grown on silicon. We conclude from a detailed experimental study and theoretical analysis of the observed spin and charge density fluctuations that one- and two-dimensional electron channels are formed in a GaAs coaxial quantum well spatially separated from the donor ions. A total carrier density of about 3 × 10(7) cm(-1) and an electron mobility in the order of 50,000 cm(2)/(V s) are estimated. Spatial mappings of individual GaAs/Al0.16Ga0.84As core-multishell nanowires show inhomogeneous properties along the wires probably related to structural defects. The first demonstration of such unambiguous 1D- and 2D-electron channels and the respective charge carrier properties in these advanced nanowire-based quantum heterostructures is the basis for various novel nanoelectronic and photonic devices.

  15. Modulation doping of GaAs/AlGaAs core-shell nanowires with effective defect passivation and high electron mobility.

    PubMed

    Boland, Jessica L; Conesa-Boj, Sonia; Parkinson, Patrick; Tütüncüoglu, Gözde; Matteini, Federico; Rüffer, Daniel; Casadei, Alberto; Amaduzzi, Francesca; Jabeen, Fauzia; Davies, Christopher L; Joyce, Hannah J; Herz, Laura M; Fontcuberta i Morral, Anna; Johnston, Michael B

    2015-02-11

    Reliable doping is required to realize many devices based on semiconductor nanowires. Group III-V nanowires show great promise as elements of high-speed optoelectronic devices, but for such applications it is important that the electron mobility is not compromised by the inclusion of dopants. Here we show that GaAs nanowires can be n-type doped with negligible loss of electron mobility. Molecular beam epitaxy was used to fabricate modulation-doped GaAs nanowires with Al0.33Ga0.67As shells that contained a layer of Si dopants. We identify the presence of the doped layer from a high-angle annular dark field scanning electron microscopy cross-section image. The doping density, carrier mobility, and charge carrier lifetimes of these n-type nanowires and nominally undoped reference samples were determined using the noncontact method of optical pump terahertz probe spectroscopy. An n-type extrinsic carrier concentration of 1.10 ± 0.06 × 10(16) cm(-3) was extracted, demonstrating the effectiveness of modulation doping in GaAs nanowires. The room-temperature electron mobility was also found to be high at 2200 ± 300 cm(2) V(-1) s(-1) and importantly minimal degradation was observed compared with undoped reference nanowires at similar electron densities. In addition, modulation doping significantly enhanced the room-temperature photoconductivity and photoluminescence lifetimes to 3.9 ± 0.3 and 2.4 ± 0.1 ns respectively, revealing that modulation doping can passivate interfacial trap states.

  16. Spatial modulation of low-frequency spin fluctuations in hole-doped La{sub 2}CuO{sub 4}

    SciTech Connect

    Yamada, K.; Lee, C.H.; Wada, J.; Kurahashi, K.; Kimura, H.; Endoh, Y.; Hosoya, S.; Shirane, G.; Birgeneau, R.J.; Kastner, M.A.

    1996-12-01

    Systematic neutron scattering measurements have been performed on the Sr-doped La(2-x)Sr(x) CuO4 to study the doping dependence of spatially modulated dynamical spin correlations or so-called incommensurate spin fluctuations. The modulated spin correlations appears beyond x approx. 0.05 which is close to the lower boundary of the superconducting phase. First evidence was observed for the linear relation between the degree of spatial modulation or the incommensurability delta(x) and the maximum Tc at x. We present a universal curve for delta(x) by adding data from other La2CuO4 systems such as oxygen-doped superconductors, oxygen-reduced or Zn-substituted non-superconductors and La(1.6-x)Nd(0.4)Sr(x)CuO4.

  17. Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale

    NASA Astrophysics Data System (ADS)

    Fisichella, Gabriele; Greco, Giuseppe; Roccaforte, Fabrizio; Giannazzo, Filippo

    2014-07-01

    Vertical heterostructures combining two or more graphene (Gr) layers separated by ultra-thin insulating or semiconductor barriers represent very promising systems for next generation electronics devices, due to the combination of high speed operation with wide-range current modulation by a gate bias. They are based on the specific mechanisms of current transport between two-dimensional-electron-gases (2DEGs) in close proximity. In this context, vertical devices formed by Gr and semiconductor heterostructures hosting an ``ordinary'' 2DEG can be also very interesting. In this work, we investigated the vertical current transport in Gr/Al0.25Ga0.75N/GaN heterostructures, where Gr is separated from a high density 2DEG by a ~24 nm thick AlGaN barrier layer. The current transport from Gr to the buried 2DEG was characterized at nanoscale using conductive atomic force microscopy (CAFM) and scanning capacitance microscopy (SCM). From these analyses, performed both on Gr/AlGaN/GaN and on AlGaN/GaN reference samples using AFM tips with different metal coatings, the Gr/AlGaN Schottky barrier height ΦB and its lateral uniformity were evaluated, as well as the variation of the carrier densities of graphene (ngr) and AlGaN/GaN 2DEG (ns) as a function of the applied bias. A low Schottky barrier (~0.40 eV) with excellent spatial uniformity was found at the Gr/AlGaN interface, i.e., lower compared to the measured values for metal/AlGaN contacts, which range from ~0.6 to ~1.1 eV depending on the metal workfunction. The electrical behavior of the Gr/AlGaN contact has been explained by Gr interaction with AlGaN donor-like surface states located in close proximity, which are also responsible of high n-type Gr doping (~1.3 × 1013 cm-2). An effective modulation of ns by the Gr Schottky contact was demonstrated by capacitance analysis under reverse bias. From this basic understanding of transport properties in Gr/AlGaN/GaN heterostructures, novel vertical field effect transistor concepts

  18. Topological States of Heterostructures

    NASA Astrophysics Data System (ADS)

    Usanmaz, Demet; Nath, Pinku; Plata, Jose J.; Buongiorno Nardelli, Marco; Fornari, Marco; Curtarolo, Stefano

    Topological insulators (TIs) have exotic properties, such as having insulating behavior in the bulk and metallic states at the surface [1]. Observations of metallic states rely on the spin-orbit induced band inversion in bulk materials and are protected by time-reversal symmetry or crystal symmetry [ 2 ]. These remarkable characteristics of TIs give rise to various applications from spintronics to quantum computers. In order to broaden the range of applications of TIs and make it more effective, an exploration of high quality heterostructures are required. Creating heterostructures of TIs has recently demonstrated to be advantageous for controlling electronic properties [3]. Inspired by these interesting properties, we have investigated the topological interface states of heterostructures.

  19. Novel engineered compound semiconductor heterostructures for advanced electronics applications

    NASA Astrophysics Data System (ADS)

    Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

    1992-06-01

    To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

  20. Ultraviolet-light-driven doping modulation in chemical vapor deposition grown graphene.

    PubMed

    Iqbal, M Z; Iqbal, M W; Khan, M F; Eom, Jonghwa

    2015-08-28

    The tuning of charge carrier density of graphene is an essential factor to achieve the integration of high-efficiency electronic and optoelectronic devices. We demonstrate the reversible doping in graphene using deep ultraviolet (UV) irradiation and treatment with O2 and N2 gases. The Dirac point shift towards a positive gate voltage of chemical vapor deposition grown graphene field-effect transistors confirms the p-type doping, which is observed under UV irradiation and treatment with O2 gas, while it restores its pristine state after treatment with N2 gas under UV irradiation. The emergence of an additional peak in the X-ray photoelectron spectra during UV irradiation and treatment with O2 gas represents the oxidation of graphene, and the elimination of this peak during UV irradiation and treatment with N2 gas reveals the restoration of graphene in its pristine state. The shift in the G and 2D bands in Raman spectra towards higher and then lower wavenumber also suggests p-type doping and then reversible doping in graphene. The controlled doping and its reversibility in large area grown graphene offer a new vision for electronic applications.

  1. Characterization of the transport properties of channel delta-doped structures by light-modulated Shubnikov-de Haas measurements

    NASA Technical Reports Server (NTRS)

    Mena, R. A.; Schacham, S. E.; Haugland, E. J.; Alterovitz, S. A.; Young, P. G.; Bibyk, S. B.; Ringel, S. A.

    1995-01-01

    The transport properties of channel delta-doped quantum well structures were characterized by conventional Hall effect and light-modulated Shubnikov-de Haas (SdH) effect measurements. The large number of carriers that become available due to the delta-doping of the channel, leads to an apparent degeneracy in the well. As a result of this degeneracy, the carrier mobility remains constant as a function of temperature from 300 K down to 1.4 K. The large amount of impurity scattering, associated with the overlap of the charge carriers and the dopants, resulted in low carrier mobilities and restricted the observation of the oscillatory magneto-resistance used to characterize the two-dimensional electron gas (2DEG) by conventional SdH measurements. By light-modulating the carriers, we were able to observe the SdH oscillation at low magnetic fields, below 1.4 tesla, and derive a value for the quantum scattering time. Our results for the ratio of the transport and quantum scattering times are lower than those previously measured for similar structures using much higher magnetic fields.

  2. Enhancement of thermoelectric performance in composite materials through locally-modulated doping

    NASA Astrophysics Data System (ADS)

    Adams, Michael J.; Jin, Hyungyu; Heremans, Joseph P.

    2015-03-01

    Composites of organic or inorganic constituents are often considered as a way to yield high thermoelectric figure of merit. The limit of this approach is set by the effective medium theory, which demonstrates formally that a composite of two materials A and B cannot have higher figure of merit than the highest of either A or B, in the absence of interaction between A and B. In this work, we show that this limit can be lifted by introducing into a host material a second phase that behaves differently vis-a-vis electrons than vis-a-vis phonons. This phase consists of electrically and thermally insulating islands of material that locally dope the semiconducting host. Doped material near the islands provides electrically conductive volumes for charge carriers. Phonons, unaffected by local doping, are scattered by the islands. Thermopower is less affected by the doped regions than electrical conductivity, by an intrinsic mathematical property of the effective medium theory. We employ this concept in Bi1-xSbx alloys and in p-type (Bi1-xSbx)2 Te3 compounds, which are known as good thermoelectric materials at cryogenic and room temperatures, respectively. Experimental transport data and the local microscopic characterizations of the samples are presented. Supported by DOE US-China Clean Energy Research Center SubK 3002041929, and by AFOSR MURI FA9550-10-1-0533.

  3. Two Carrier Analysis of Persistent Photoconductivity in Modulation-Doped Structures

    NASA Technical Reports Server (NTRS)

    Schacham, S. E.; Mena, R. A.; Haugland, E. J.; Alterovitz, S. A.

    1995-01-01

    A simultaneous fit of Hall and conductivity data gives quantitative results on the carrier concentration and mobility in both the quantum well and the parallel conduction channel. In this study this method was applied to reveal several new findings on the effect of persistent photoconductivity (PPC) on free-carrier concentrations and mobilities. The increase in the two-dimensional electron-gas (2DEG) concentration is significantly smaller than the apparent one derived from single carrier analysis of the Hall coefficient. In the two types of structures investigated, delta doped and continuously doped barrier, the apparent concentration almost doubles following illumination, while analysis reveals an increase of about 20% in the 2DEG. The effect of PPC on mobility depends on the structure. For the sample with a continuously doped barrier the mobility in the quantum well more than doubles. This increase is attributed to the effective screening of the ionized donors by the large electron concentration in the barrier. In the delta doped barrier sample the mobility is reduced by almost a factor of 2. This decrease is probably caused by strong coupling between the two wells, as is demonstrated by self-consistent analysis.

  4. Vertical 2D Heterostructures

    NASA Astrophysics Data System (ADS)

    Lotsch, Bettina V.

    2015-07-01

    Graphene's legacy has become an integral part of today's condensed matter science and has equipped a whole generation of scientists with an armory of concepts and techniques that open up new perspectives for the postgraphene area. In particular, the judicious combination of 2D building blocks into vertical heterostructures has recently been identified as a promising route to rationally engineer complex multilayer systems and artificial solids with intriguing properties. The present review highlights recent developments in the rapidly emerging field of 2D nanoarchitectonics from a materials chemistry perspective, with a focus on the types of heterostructures available, their assembly strategies, and their emerging properties. This overview is intended to bridge the gap between two major—yet largely disjunct—developments in 2D heterostructures, which are firmly rooted in solid-state chemistry or physics. Although the underlying types of heterostructures differ with respect to their dimensions, layer alignment, and interfacial quality, there is common ground, and future synergies between the various assembly strategies are to be expected.

  5. Drift velocity of electrons in quantum wells of selectively doped In{sub 0.5}Ga{sub 0.5}As/Al{sub x}In{sub 1-x}As and In{sub 0.2}Ga{sub 0.8}As/Al{sub x}Ga{sub 1-x}As heterostructures in high electric fields

    SciTech Connect

    Pozela, J. Pozela, K.; Raguotis, R.; Juciene, V.

    2011-06-15

    The field dependence of drift velocity of electrons in quantum wells of selectively doped In{sub 0.5}Ga{sub 0.5}As/Al{sub x}In{sub 1-x}As and In{sub 0.2}Ga{sub 0.8}As/Al{sub x}Ga{sub 1-x}As heterostructures is calculated by the Monte Carlo method. The influence of varying the molar fraction of Al in the composition of the Al{sub x}Ga{sub 1-x}As and Al{sub x}In{sub 1-x}As barriers of the quantum well on the mobility and drift velocity of electrons in high electric fields is studied. It is shown that the electron mobility rises as the fraction x of Al in the barrier composition is decreased. The maximum mobility in the In{sub 0.5}Ga{sub 0.5}As/In{sub 0.8}Al{sub 0.2}As quantum wells exceeds the mobility in a bulk material by a factor of 3. An increase in fraction x of Al in the barrier leads to an increase in the threshold field E{sub th} of intervalley transfer (the Gunn effect). The threshold field is E{sub th} = 16 kV/cm in the In{sub 0.5}Ga{sub 0.5}As/Al{sub 0.5}In{sub 0.5}As heterostructures and E{sub th} = 10 kV/cm in the In{sub 0.2}Ga{sub 0.8}As/Al{sub 0.3}Ga{sub 0.7}As heterostructures. In the heterostructures with the lowest electron mobility, E{sub th} = 2-3 kV/cm, which is lower than E{sub th} = 4 kV/cm in bulk InGaAs.

  6. Ion-doping as a strategy to modulate hydroxyapatite nanoparticle internalization

    NASA Astrophysics Data System (ADS)

    Zhao, Z.; Espanol, M.; Guillem-Marti, J.; Kempf, D.; Diez-Escudero, A.; Ginebra, M.-P.

    2016-01-01

    Although it is widely acknowledged that ionic substitutions on bulk hydroxyapatite substrates have a strong impact on their biological performance, little is known of their effect on nanoparticles (NPs) especially when used for gene transfection or drug delivery. The fact that NPs would be internalized poses many questions but also opens up many new possibilities. The objective of the present work is to synthesize and assess the effect of a series of hydroxyapatite-like (HA) NPs doped with various ions on cell behavior, i.e. carbonate, magnesium and co-addition. We synthesized NPs under similar conditions to allow comparison of results and different aspects in addition to assessing the effect of the doping ion(s) were investigated: (1) the effect of performing the cell culture study on citrate-dispersed NPs and on agglomerated NPs, (2) the effect of adding/excluding 10% of foetal bovine serum (FBS) in the cell culture media and (3) the type of cell, i.e. MG-63 versus rat mesenchymal stem cells (rMSCs). The results clearly demonstrated that Mg-doping had a major effect on MG-63 cells with high cytotoxicity but not to rMSCs. This was a very important finding because it proved that doping could be a tool to modify NP internalization. The results also suggest that NP surface charge had a large impact on MG-63 cells and prevents their internalization if it is too negative--this effect was less critical for rMSCs.Although it is widely acknowledged that ionic substitutions on bulk hydroxyapatite substrates have a strong impact on their biological performance, little is known of their effect on nanoparticles (NPs) especially when used for gene transfection or drug delivery. The fact that NPs would be internalized poses many questions but also opens up many new possibilities. The objective of the present work is to synthesize and assess the effect of a series of hydroxyapatite-like (HA) NPs doped with various ions on cell behavior, i.e. carbonate, magnesium and co

  7. Self-amplitude and self-phase modulation of the charcoal mode-locked erbium-doped fiber lasers.

    PubMed

    Lin, Yung-Hsiang; Lo, Jui-Yung; Tseng, Wei-Hsuan; Wu, Chih-I; Lin, Gong-Ru

    2013-10-21

    With the intra-cavity nano-scale charcoal powder based saturable absorber, the 455-fs passive mode-locking of an L-band erbium-doped fiber laser (EDFL) is demonstrated. The size reduction of charcoal nano-particle is implemented with a simple imprinting-exfoliation-wiping method, which assists to increase the transmittance up to 0.91 with corresponding modulation depth of 26%. By detuning the power gain from 17 to 21 dB and cavity dispersion from -0.004 to -0.156 ps² of the EDFL, the shortening of mode-locked pulsewidth from picosecond to sub-picosecond by the transformation of the pulse forming mechanism from self-amplitude modulation (SAM) to the combining effect of self-phase modulation (SPM) and group delay dispersion (GDD) is observed. A narrower spectrum with 3-dB linewidth of 1.83-nm is in the SAM case, whereas the spectral linewidth broadens to 5.86 nm with significant Kelly sideband pair can be observed if the EDFL enters into the SPM regime. The mode-locking mechanism transferred from SAM to SPM/GDD dominates the pulse shortening procedure in the EDFL, whereas the intrinsic defects in charcoal nano-particle only affect the pulse formation at initial stage. The minor role of the saturable absorber played in the EDFL cavity with strongest SPM is observed.

  8. Field-Effect Modulation of Ambipolar Doping and Domain Wall Band Alignment in P-type Vanadium Dioxide Nanowires

    NASA Astrophysics Data System (ADS)

    Hou, Yasen; Peng, Xingyue; Yang, Yiming; Yu, Dong

    The sub-picosecond metal-insulator phase transition in vanadium dioxide (VO2) has attracted extensive attention with potential applications in ultrafast Mott transistors. However, the development of VO2-based transistors lags behind, owing to the lack of an efficient and hysteresis-free electrostatic doping control. Here we report the first synthesis of p-type single crystalline VO2nanowires via catalyst-free chemical vapor deposition. The p-type doping was unambiguously confirmed by both solid and electrochemical gating methods, and further evidenced by the scanning photocurrent microscopic measurements. Interestingly, we observed that the photocurrent spot polarity at the metal-insulator domain walls was reversibly switched by electrochemical gating, which indicates a band bending flipping. Furthermore, we eliminated the common hysteresis in gate sweep and greatly shortened the transistor response time via a hybrid gating method, which combines the merits of liquid ionic and solid gating. The capability of efficient field effect modulation of ambipolar conduction and band alignment offers new opportunities on understanding the phase transition mechanism and enables novel electronic applications based on VO2.

  9. Evaluation of modulating field of photoreflectance of surface-intrinsic-n+ type doped GaAs by using photoinduced voltage

    NASA Astrophysics Data System (ADS)

    Lee, W. Y.; Chien, J. Y.; Wang, D. P.; Huang, K. F.; Huang, T. C.

    2002-04-01

    Photoreflectance (PR) of surface-intrinsic-n+ type doped GaAs has been measured for various power densities of pump laser. The spectra exhibited many Franz-Keldysh oscillations, whereby the strength of electric field F in the undoped layer can be determined. The thus obtained Fs are subject to photovoltaic effect and are less than built-in field Fbi. In the previous work we have obtained the relation F≈Fbi-δF/2 when δF≪Fbi by using electroreflectance to simulate PR, where δF is the modulating field of the pump beam. In this work a method was devised to evaluate δF by using photoinduced voltages Vs and, hence, the relation can be verified by PR itself. The δFs obtained by Vs are also consistent with those of using imaginary part of fast Fourier transform of PR spectra.

  10. Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Sieg, R. M.; Yao, H. D.; Snyder, P. G.; Woollam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.

    1991-01-01

    Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal-organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10% of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice-matched concentration.

  11. Heterostructures as a quantum optical klistron

    SciTech Connect

    Malov, Yu.A.

    1995-12-31

    THE beam of {open_quotes}hot{close_quotes} ballistic electrons which were first obtained experimentally in (1) is considered when passing through the heterostructures consisting of two potential barriers in barriers in the presence of FEL tuning in infra-red region. In the presence of the first barrier the electron beam in the FEL electromagnetic field can either absorb or emit the field quanta. The initial electron beam may split into states n=1 (absorption of one quantum), n=0 (the beam energy unchanged), and n=-1 (emission of one quantum). The interference of the states with n=0, n=1 and n=0, n=1 results in the initiation of two traveling modulation waves at electromagnetic frequency w. Beats between these waves in the region of the of their overlapping lead to a periodic dependence of the modulation from w. It has been found that the spontaneous coherent radiation (SCR) intensity oscillates with the period depending on FEL frequency w. It is possible to increase or to decrease the spectral intensity of SCR varying w. The suggested idea of modulation on the first barrier of heterostructures and the radiation of modulated electron beam on the second barrier is a scheme of an quantum optical klistron in infra-red region.

  12. Npn double heterostructure bipolar transistor with ingaasn base region

    DOEpatents

    Chang, Ping-Chih; Baca, Albert G.; Li, Nein-Yi; Hou, Hong Q.; Ashby, Carol I. H.

    2004-07-20

    An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.

  13. Rare Earth Doped GaN Laser Structures Using Metal Modulated Epitaxy

    DTIC Science & Technology

    2015-03-30

    since defect levels play a big role in the energy transfer. We conclude that phase shift epitaxy has been thus proven effective in the doping...J. Heikenfeld, M. Garter, D. S. Lee, R. Birkhahn, and A. J. Steckl: Appl. Phys. Lett. 75 (1999) 1189. 5 Z. Q. Li, H. J. Bang , G. X. Piao, J...density are believed to be big contributors to the leakage current. As described in the last chapter, the low temperature grown p-n junction is very

  14. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

    NASA Astrophysics Data System (ADS)

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-02-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut - (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices.

  15. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures.

    PubMed

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-02-26

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut Pb(Mg(1/3)Nb(2/3)O3-(PbTiO3) (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices.

  16. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

    PubMed Central

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-01-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut - (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices. PMID:26916618

  17. Strain-modulated ferromagnetism and band gap of Mn doped Bi2Se3

    PubMed Central

    Qi, Shifei; Yang, Hualing; Chen, Juan; Zhang, Xiaoyang; Yang, Yingping; Xu, Xiaohong

    2016-01-01

    The quantized anomalous Hall effect (QAHE) have been theoretically predicted and experimentally confirmed in magnetic topological insulators (TI), but dissipative channels resulted by small-size band gap and weak ferromagnetism make QAHE be measured only at extremely low temperature (<0.1 K). Through density functional theory calculations, we systemically study of the magnetic properties and electronic structures of Mn doped Bi2Se3 with in-plane and out-of-plane strains. It is found that out-of-plane tensile strain not only improve ferromagnetism, but also enlarge Dirac-mass gap (up to 65.6 meV under 6% strain, which is higher than the thermal motion energy at room temperature ~26 meV) in the Mn doped Bi2Se3. Furthermore, the underlying mechanisms of these tunable properties are also discussed. This work provides a new route to realize high-temperature QAHE and paves the way towards novel quantum electronic device applications. PMID:27374782

  18. Strain-modulated ferromagnetism and band gap of Mn doped Bi2Se3

    NASA Astrophysics Data System (ADS)

    Qi, Shifei; Yang, Hualing; Chen, Juan; Zhang, Xiaoyang; Yang, Yingping; Xu, Xiaohong

    2016-07-01

    The quantized anomalous Hall effect (QAHE) have been theoretically predicted and experimentally confirmed in magnetic topological insulators (TI), but dissipative channels resulted by small-size band gap and weak ferromagnetism make QAHE be measured only at extremely low temperature (<0.1 K). Through density functional theory calculations, we systemically study of the magnetic properties and electronic structures of Mn doped Bi2Se3 with in-plane and out-of-plane strains. It is found that out-of-plane tensile strain not only improve ferromagnetism, but also enlarge Dirac-mass gap (up to 65.6 meV under 6% strain, which is higher than the thermal motion energy at room temperature ~26 meV) in the Mn doped Bi2Se3. Furthermore, the underlying mechanisms of these tunable properties are also discussed. This work provides a new route to realize high-temperature QAHE and paves the way towards novel quantum electronic device applications.

  19. Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure

    DOE PAGES

    Laroche, D.; Huang, S. -H.; Chuang, Y.; ...

    2016-06-06

    We report the magneto-transport, scattering mechanisms, and e ective mass analysis of an ultralow density two-dimensional hole gas capacitively induced in an undoped strained Ge/Si0:2Ge0:8 heterostructure. This fabrication technique allows hole densities as low as p 1:1 1010 cm² to be achieved, more than one order of magnitude lower than previously reported in doped Ge/SiGe heterostructures. The power-law exponent of the electron mobility versus density curve, / n , is found to be 0:29 over most of the density range, implying that background impurity scattering is the dominant scattering mechanism at intermediate densities in such devices. A charge migration modelmore » is used to explain the mobility decrease at the highest achievable densities. The hole e ective mass is deduced from the temperature dependence of Shubnikov-de Haas oscillations. At p 1:0 1011cm², the e ective mass m is 0:105 m0, which is signi cantly larger than masses obtained from modulation-doped Ge/SiGe two-dimensional hole gases.« less

  20. Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure

    SciTech Connect

    Laroche, D.; Huang, S. -H.; Chuang, Y.; Li, J. -Y.; Liu, C. W.; Lu, T. M.

    2016-06-06

    We report the magneto-transport, scattering mechanisms, and e ective mass analysis of an ultralow density two-dimensional hole gas capacitively induced in an undoped strained Ge/Si0:2Ge0:8 heterostructure. This fabrication technique allows hole densities as low as p 1:1 1010 cm² to be achieved, more than one order of magnitude lower than previously reported in doped Ge/SiGe heterostructures. The power-law exponent of the electron mobility versus density curve, / n , is found to be 0:29 over most of the density range, implying that background impurity scattering is the dominant scattering mechanism at intermediate densities in such devices. A charge migration model is used to explain the mobility decrease at the highest achievable densities. The hole e ective mass is deduced from the temperature dependence of Shubnikov-de Haas oscillations. At p 1:0 1011cm², the e ective mass m is 0:105 m0, which is signi cantly larger than masses obtained from modulation-doped Ge/SiGe two-dimensional hole gases.

  1. 27Al fourier-transform electron-spin-echo modulation of Cu 2+-doped zeolites A and X

    NASA Astrophysics Data System (ADS)

    Goldfarb, Daniella; Kevan, Larry

    Cu 2+-doped NaA, CaA, and NaX zeolites were studied using the electron-spin-echo modulation (ESEM) method. In both hydrated and dehydrated samples 27Al modulation has been observed. The time-domain ESEM traces were Fourier transformed and analyzed in the frequency domain. All FT-ESEM spectra of the hydrated samples showed a single peak at the Larmor frequency of 27Ai, indicating that the zeeman interaction is dominant and that the 27Al quadrupole and hyperfine interactions are relatively small. Considerable changes in the spectrum appear upon dehydration. Several frequencies significantly different from the Larmor frequency appear and the spectrum depends on the major cocation present. The major features of the spectra of the dehydrated zeolites could be theoretically reproduced, using exact diagonalization of the nuclear Hamiltonian, with relatively large isotropic hyperfine and quadrupole coupling constants. For example, in CuCaA and CuNaA zeolites the isotropic hyperfine constant is in the range of 0.2-0.5 and 0.8-1.0 MHz, respectively, with the quadrupole coupling constant in the range of 6-10 MHz for both.

  2. N-type Self-Doping of Fluorinate Conjugated Polyelectrolytes for Polymer Solar Cells: Modulation of Dipole, Morphology, and Conductivity.

    PubMed

    Liu, Huimin; Huang, Liqiang; Cheng, Xiaofang; Hu, Aifeng; Xu, Haitao; Chen, Lie; Chen, Yiwang

    2017-01-11

    For the conjugated polyelectrolytes (CPEs) interlayers, many studies focus on the modulation of interfacial dipoles in the polymer solar cells (PSCs) by altering the side polar groups but usually ignore the functions of conjugated backbone engineering (CBE) through the delicate design to improve their functions. Herein, novel alcohol-soluble CPEs by incorporation of fluorinate benzene onto the backbone, namely PFf1B and PFf4B, have been synthesized to modulate the interfacial dipoles and charge mobility. A favorable bidipole composed of ion-induced dipole and F hydrogen bond-induced dipole was discovered to be responsible for the tunable work function of indium tin oxide (ITO) electrode. Moreover, a desirable nanowires morphology of the upper active layer has also been obtained with the help of the self-assembly of fluorinated CPEs. More intriguingly, an unusual n-type doping favored by fluorine-induced electron transfer (FIET) was observed in these CPEs, leading to the improvement in the electron mobility. As a consequence, these fluorinated CPEs were demonstrated with a general application in the PSCs based on various active layers. Note that PFf4B with the highest loading of F atoms can work efficiently in a thickness of up to 31.8 nm, which broke the thickness limitation of most reported CPEs interlayer.

  3. Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

    PubMed Central

    Myoung, Nojoon; Park, Hee Chul; Lee, Seung Joo

    2016-01-01

    Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplored. Here, we present an analytical device model for graphene-based spintronics by using ferromagnetic graphene in vertical heterostructures. We consider a normal or ferroelectric insulator as a tunneling layer. The device concept yields a way of controlling spin transport through the vertical heterostructures, resulting in gate-tunable spin-switching phenomena. Also, we revealed that a ‘giant’ resistance emerges through a ferroelectric insulating layer owing to the anti-parallel configuration of ferromagnetic graphene layers by means of electric fields via gate and bias voltages. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures without use of magnetic fields. PMID:27126101

  4. Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

    NASA Astrophysics Data System (ADS)

    Myoung, Nojoon; Park, Hee Chul; Lee, Seung Joo

    2016-04-01

    Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplored. Here, we present an analytical device model for graphene-based spintronics by using ferromagnetic graphene in vertical heterostructures. We consider a normal or ferroelectric insulator as a tunneling layer. The device concept yields a way of controlling spin transport through the vertical heterostructures, resulting in gate-tunable spin-switching phenomena. Also, we revealed that a ‘giant’ resistance emerges through a ferroelectric insulating layer owing to the anti-parallel configuration of ferromagnetic graphene layers by means of electric fields via gate and bias voltages. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures without use of magnetic fields.

  5. Probing interlayer interactions in WS2 -graphene van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Chung, Ting Fung; Yuan, Long; Huang, Libai; Chen, Yong P.

    Two-dimensional crystals based van der Waals coupled heterostructures are of interest owing to their potential applications for flexible and transparent electronics and optoelectronics. The interaction between the 2D layered crystals at the interfaces of these heterostructures is crucial in determining the overall performance and is strongly affected by contamination and interfacial strain. We have fabricated heterostructures consisting of atomically thin exfoliated WS2 and chemical-vapor-deposited (CVD) graphene, and studied the interaction and coupling between the WS2 and graphene using atomic force microscopy (AFM), Raman spectroscopy and femtosecond transient absorption measurement (TAM). Information from Raman-active phonon modes allows us to estimate charge doping in graphene and interfacial strain on the crystals. Spatial imaging probed by TAM can be correlated to the heterostructure surface morphology measured by AFM and Raman maps of graphene and WS2, showing how the interlayer coupling alters exciton decay dynamics quantitatively.

  6. Cooled photodiodes based on a type-II single p-InAsSbP/ n-InAs heterostructure

    NASA Astrophysics Data System (ADS)

    Il'inskaya, N. D.; Karandashev, S. A.; Latnikova, N. M.; Lavrov, A. A.; Matveev, B. A.; Petrov, A. S.; Remennyi, M. A.; Sevost'yanov, E. N.; Stus', N. M.

    2013-09-01

    Analysis of current-voltage and spectral characteristics of photodiodes based on a single p-InAsSbP/ n-InAs heterostructure formed on a heavily doped n +-InAs substrate ( n + ˜ 1018 cm-3) is presented. It is shown that, at low temperatures (77 < T < 190 K), the generation-recombination current flow mechanism typical of p-i-n diodes dominates. Expected parameters of the photodiode that can be obtained using these heterostructures are presented.

  7. Heterostructure terahertz devices.

    PubMed

    Ryzhii, Victor

    2008-08-19

    The terahertz (THz) range of frequencies is borderline between microwave electronics and photonics. It corresponds to the frequency bands of molecular and lattice vibrations in gases, fluids, and solids. The importance of the THz range is in part due to numerous potential and emerging applications which include imaging and characterization, detection of hazardous substances, environmental monitoring, radio astronomy, covert inter-satellite communications, as well as biological and medical applications. During the last decades marked progress has been achieved in the development, fabrication, and practical implementation of THz devices and systems. This is primarily owing to the utilization of gaseous and free electron lasers and frequency converters using nonlinear optical phenomena as sources of THz radiation. However, such devices and hence the systems based on them are fairly cumbersome. This continuously stimulates an extensive search for new compact and efficient THz sources based on semiconductor heterostructures. Despite tremendous efforts lasting several decades, the so-called THz gap unbridged by semiconductor heterostructure electron and optoelectron devices still exists providing appropriate levels of power of the generated THz radiation. The invention and realization of quantum cascade lasers made of multiple quantum-well heterostructures already resulted in the partial solution of the problem in question, namely, in the successful coverage of the high-frequency portion of the THz gap (2-3 THz and higher). Further advancement to lower frequencies meets, perhaps, fundamental difficulties. All this necessitates further extensive theoretical and experimental studies of more or less traditional and novel semiconductor heterostructures as a basis for sources of THz radiation. This special issue includes 11 excellent original papers submitted by several research teams representing 14 institutions in Europe, America, and Asia. Several device concepts which

  8. Preface: Heterostructure terahertz devices

    NASA Astrophysics Data System (ADS)

    Ryzhii, Victor

    2008-08-01

    The terahertz (THz) range of frequencies is borderline between microwave electronics and photonics. It corresponds to the frequency bands of molecular and lattice vibrations in gases, fluids, and solids. The importance of the THz range is in part due to numerous potential and emerging applications which include imaging and characterization, detection of hazardous substances, environmental monitoring, radio astronomy, covert inter-satellite communications, as well as biological and medical applications. During the last decades marked progress has been achieved in the development, fabrication, and practical implementation of THz devices and systems. This is primarily owing to the utilization of gaseous and free electron lasers and frequency converters using nonlinear optical phenomena as sources of THz radiation. However, such devices and hence the systems based on them are fairly cumbersome. This continuously stimulates an extensive search for new compact and efficient THz sources based on semiconductor heterostructures. Despite tremendous efforts lasting several decades, the so-called THz gap unbridged by semiconductor heterostructure electron and optoelectron devices still exists providing appropriate levels of power of the generated THz radiation. The invention and realization of quantum cascade lasers made of multiple quantum-well heterostructures already resulted in the partial solution of the problem in question, namely, in the successful coverage of the high-frequency portion of the THz gap (2-3 THz and higher). Further advancement to lower frequencies meets, perhaps, fundamental difficulties. All this necessitates further extensive theoretical and experimental studies of more or less traditional and novel semiconductor heterostructures as a basis for sources of THz radiation. This special issue includes 11 excellent original papers submitted by several research teams representing 14 institutions in Europe, America, and Asia. Several device concepts which

  9. Nitrogen-doped carbon nanoparticle modulated turn-on fluorescent probes for histidine detection and its imaging in living cells

    NASA Astrophysics Data System (ADS)

    Zhu, Xiaohua; Zhao, Tingbi; Nie, Zhou; Miao, Zhuang; Liu, Yang; Yao, Shouzhuo

    2016-01-01

    In this work, nitrogen-doped carbon nanoparticle (N-CNP) modulated turn-on fluorescent probes were developed for rapid and selective detection of histidine. The as synthesized N-CNPs exhibited high fluorescence quantum yield and excellent biocompatibility. The fluorescence of N-CNPs can be quenched selectively by Cu(ii) ions with high efficiency, and restored by the addition of histidine owing to the competitive binding of Cu(ii) ions and histidine that removes Cu(ii) ions from the surface of the N-CNPs. Under the optimal conditions, a linear relationship between the increased fluorescence intensity of N-CNP/Cu(ii) ion conjugates and the concentration of histidine was established in the range from 0.5 to 60 μM. The detection limit was as low as 150 nM (signal-to-noise ratio of 3). In addition, the as-prepared N-CNP/Cu(ii) ion nanoprobes showed excellent biocompatibility and were applied for a histidine imaging assay in living cells, which presented great potential in the bio-labeling assay and clinical diagnostic applications.In this work, nitrogen-doped carbon nanoparticle (N-CNP) modulated turn-on fluorescent probes were developed for rapid and selective detection of histidine. The as synthesized N-CNPs exhibited high fluorescence quantum yield and excellent biocompatibility. The fluorescence of N-CNPs can be quenched selectively by Cu(ii) ions with high efficiency, and restored by the addition of histidine owing to the competitive binding of Cu(ii) ions and histidine that removes Cu(ii) ions from the surface of the N-CNPs. Under the optimal conditions, a linear relationship between the increased fluorescence intensity of N-CNP/Cu(ii) ion conjugates and the concentration of histidine was established in the range from 0.5 to 60 μM. The detection limit was as low as 150 nM (signal-to-noise ratio of 3). In addition, the as-prepared N-CNP/Cu(ii) ion nanoprobes showed excellent biocompatibility and were applied for a histidine imaging assay in living cells, which

  10. Photoluminescence studies of modulation doped coupled double quantum wells in magnetic fields

    SciTech Connect

    Kim, Y.; Perry, C.H. |; Simmons, J.A.; Klem, J.F.; Jones, E.D.; Rickel, D.G.

    1996-09-01

    We have studied the photoluminescence spectra of a series of mudulation doped couple double quantum well structures in parallel and perpendicular magnetic fields to 62 tesla at 4K and 77K, for B{parallel}a, the spectra display distinct Landau level transitions which show anti-crossing with the e1-hh1 exciton. At high fields, the lowest conduction band-valence exciton approaches the extrapolated 0- 0 Landau level. About 25 Tesla, there is valence band mixing of the e1-lh1, e1-hh2, e1-hh1 transitions. The spectral peaks display a diamagnetic shift in low in-plane magnetic fields which become linear in high fields. At magnetic fields beyond 40T, spin splitting is observed for both B{parallel}z and B{perpendicular} geometries. The partial energy gap discovered in conductance measurements in in-plane fields was not conclusively observed using photoluminescence spectroscopy, although anomalies in the energy dependence of the lowest level with magnetic field were evident at similar field values.

  11. All-Optical, Photonic Band Gap Modulation in Azobenzene Liquid Crystal Doped Cholesterics (Preprint)

    DTIC Science & Technology

    2006-10-01

    pitch h of the CLC, ~A = hen 11- nJ..)and As = hn, where n IIand nl. are the local principal values of the refractive indices of the CLC and n = (n II...molecule is typically used to affect local LC-ordering. The ability to use this process to effectively (and reversibly) modulate the pitch of a CLC and...via irradiation of microwatt and even nanowatt power light beams due to photoisomerization processes of the azobenzene core. Due to a wide mesophase

  12. Charge transfer in crystalline germanium/monolayer MoS2 heterostructures prepared by chemical vapor deposition.

    PubMed

    Lin, Yung-Chen; Bilgin, Ismail; Ahmed, Towfiq; Chen, Renjie; Pete, Doug; Kar, Swastik; Zhu, Jian-Xin; Gupta, Gautam; Mohite, Aditya; Yoo, Jinkyoung

    2016-11-10

    Heterostructuring provides novel opportunities for exploring emergent phenomena and applications by developing designed properties beyond those of homogeneous materials. Advances in nanoscience enable the preparation of heterostructures formed incommensurate materials. Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, are of particular interest due to their distinct physical characteristics. Recently, 2D/2D heterostructures have opened up new research areas. However, other heterostructures such as 2D/three-dimensional (3D) materials have not been thoroughly studied yet although the growth of 3D materials on 2D materials creating 2D/3D heterostructures with exceptional carrier transport properties has been reported. Here we report a novel heterostructure composed of Ge and monolayer MoS2, prepared by chemical vapor deposition. A single crystalline Ge (110) thin film was grown on monolayer MoS2. The electrical characteristics of Ge and MoS2 in the Ge/MoS2 heterostructure were remarkably different from those of isolated Ge and MoS2. The field-effect conductivity type of the monolayer MoS2 is converted from n-type to p-type by growth of the Ge thin film on top of it. Undoped Ge on MoS2 is highly conducting. The observations can be explained by charge transfer in the heterostructure as opposed to chemical doping via the incorporation of impurities, based on our first-principles calculations.

  13. Modulation of Crystal Surface and Lattice by Doping: Achieving Ultrafast Metal-Ion Insertion in Anatase TiO2.

    PubMed

    Wang, Hsin-Yi; Chen, Han-Yi; Hsu, Ying-Ya; Stimming, Ulrich; Chen, Hao Ming; Liu, Bin

    2016-10-11

    We report that an ultrafast kinetics of reversible metal-ion insertion can be realized in anatase titanium dioxide (TiO2). Niobium ions (Nb5+) were carefully chosen to dope and drive anatase TiO2 into very thin nanosheets standing perpendicularly onto transparent conductive electrode (TCE) and simultaneously construct TiO2 with an ion-conducting surface together with expanded ion diffusion channels, which enabled ultrafast metal ions diffusion across the electrolyte/solid interface and into the bulk of TiO2. To demonstrate the superior metal-ion insertion rate, the electrochromic features induced by ion intercalation were examined, which exhibited the best color switching speed of 4.82 s for coloration and 0.91 s for bleaching among all reported nano-sized TiO2 devices. When performed as the anode for the secondary battery, the modified TiO2 was capable to deliver a highly reversible capacity of 61.2 mAh g-1 at an ultrahigh specific current rate of 60 C (10.2 A g-1). This fast metal-ion insertion behavior was systematically investigated by the well-controlled electrochemical approaches, which quantitatively revealed both the enhanced surface kinetics and bulk ion diffusion rate. Our study could provide a facile methodology to modulate the ion diffusion kinetics for metal oxides.

  14. Coherent dynamics of Landau-Levels in modulation doped GaAs quantum wells at high magnetic fields

    NASA Astrophysics Data System (ADS)

    Liu, Cunming; Paul, Jagannath; Reno, John; McGill, Stephen; Hilton, David; Karaiskaj, Denis

    By using two-dimensional Fourier transform spectroscopy, we investigate the dynamics of Landau-Levels formed in modulation doped GaAs/AlGaAs quantum wells of 18 nm thickness at high magnetic fields and low temperature. The measurements show interesting dephasing dynamics and linewidth dependency as a function of the magnetic field. The work at USF and UAB was supported by the National Science Foundation under grant number DMR-1409473. The work at NHMFL, FSU was supported by the National Science Foundation under grant numbers DMR-1157490 and DMR-1229217. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. Department of Energy, Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.

  15. Magnetooptical study of CdSe/ZnMnSe semimagnetic quantum-dot ensembles with n-type modulation doping

    SciTech Connect

    Reshina, I. I. Ivanov, S. V.

    2014-12-15

    Magnetic and polarization investigations of the photoluminescence and resonant electron spin-flip Raman scattering in ensembles of self-organized CdSe/ZnMnSe semimagnetic quantum dots with n-type modulation doping are carried out. It is demonstrated that exciton transitions contribute to the photoluminescence band intensity, along with the transitions of trions in the singlet state. In the Hanle-effect measurements, negative circular polarization in zero magnetic field is observed, which is related to the optical orientation of a trion heavy hole. The lifetime and spin-relaxation time of a heavy hole are estimated as ≤3 and ≤1 ps, respectively. Such short times are assumed to be due to Auger recombination with the excitation of an intrinsic transition in a Mn{sup 2+} ion. Investigations of the photoluminescence-maximum intensity and shift in a longitudinal magnetic field at the σ{sup −}σ{sup +} and σ{sup −}σ{sup −} polarizations reveal the pronounced spin polarization of electrons. Under resonant excitation conditions, a sharp increase in the photoluminescence-band maximum intensity at σ{sup −} excitation polarization over the σ{sup +} one is observed. The Raman scattering peak at the electron spin-flip transition is observed upon resonant excitation in a transverse magnetic field in crossed linear polarizations. This peak is shown to be a Brillouin function of a magnetic field.

  16. Nitrogen-doped carbon nanoparticle modulated turn-on fluorescent probes for histidine detection and its imaging in living cells.

    PubMed

    Zhu, Xiaohua; Zhao, Tingbi; Nie, Zhou; Miao, Zhuang; Liu, Yang; Yao, Shouzhuo

    2016-01-28

    In this work, nitrogen-doped carbon nanoparticle (N-CNP) modulated turn-on fluorescent probes were developed for rapid and selective detection of histidine. The as synthesized N-CNPs exhibited high fluorescence quantum yield and excellent biocompatibility. The fluorescence of N-CNPs can be quenched selectively by Cu(II) ions with high efficiency, and restored by the addition of histidine owing to the competitive binding of Cu(II) ions and histidine that removes Cu(II) ions from the surface of the N-CNPs. Under the optimal conditions, a linear relationship between the increased fluorescence intensity of N-CNP/Cu(II) ion conjugates and the concentration of histidine was established in the range from 0.5 to 60 μM. The detection limit was as low as 150 nM (signal-to-noise ratio of 3). In addition, the as-prepared N-CNP/Cu(II) ion nanoprobes showed excellent biocompatibility and were applied for a histidine imaging assay in living cells, which presented great potential in the bio-labeling assay and clinical diagnostic applications.

  17. Chemical redox modulated fluorescence of nitrogen-doped graphene quantum dots for probing the activity of alkaline phosphatase.

    PubMed

    Liu, JingJing; Tang, Duosi; Chen, Zhitao; Yan, Xiaomei; Zhong, Zhou; Kang, Longtian; Yao, Jiannian

    2017-03-08

    Alkaline phosphatase (ALP) as an essential enzyme plays an important role in clinical diagnoses and biomedical researches. Hence, the development of convenient and sensitivity assay for monitoring ALP is extremely important. In this work, on the basis of chemical redox strategy to modulate the fluorescence of nitrogen-doped graphene quantum dots (NGQDs), a novel label-free fluorescent sensing system for the detection of alkaline phosphatase (ALP) activity has been developed. The fluorescence of NGQDs is firstly quenched by ultrathin cobalt oxyhydroxide (CoOOH) nanosheets, and then restored by ascorbic acid (AA), which can reduce CoOOH to Co(2+), thus the ALP can be monitored based on the enzymatic hydrolysis of L-ascorbic acid-2-phosphate (AAP) by ALP to generate AA. Quantitative evaluation of ALP activity in a range from 0.1 to 5U/L with the detection limit of 0.07U/L can be realized in this sensing system. Endowed with high sensitivity and selectivity, the proposed assay is capable of detecting ALP in biological system with satisfactory results. Meanwhile, this sensing system can be easily extended to the detection of various AA-involved analytes.

  18. Interface modulated currents in periodically proton exchanged Mg doped lithium niobate

    NASA Astrophysics Data System (ADS)

    Neumayer, Sabine M.; Manzo, Michele; Kholkin, Andrei L.; Gallo, Katia; Rodriguez, Brian J.

    2016-03-01

    Conductivity in Mg doped lithium niobate (Mg:LN) plays a key role in the reduction of photorefraction and is therefore widely exploited in optical devices. However, charge transport through Mg:LN and across interfaces such as electrodes also yields potential electronic applications in devices with switchable conductivity states. Furthermore, the introduction of proton exchanged (PE) phases in Mg:LN enhances ionic conductivity, thus providing tailorability of conduction mechanisms and functionality dependent on sample composition. To facilitate the construction and design of such multifunctional electronic devices based on periodically PE Mg:LN or similar ferroelectric semiconductors, fundamental understanding of charge transport in these materials, as well as the impact of internal and external interfaces, is essential. In order to gain insight into polarization and interface dependent conductivity due to band bending, UV illumination, and chemical reactivity, wedge shaped samples consisting of polar oriented Mg:LN and PE phases were investigated using conductive atomic force microscopy. In Mg:LN, three conductivity states (on/off/transient) were observed under UV illumination, controllable by the polarity of the sample and the externally applied electric field. Measurements of currents originating from electrochemical reactions at the metal electrode-PE phase interfaces demonstrate a memresistive and rectifying capability of the PE phase. Furthermore, internal interfaces such as domain walls and Mg:LN-PE phase boundaries were found to play a major role in the accumulation of charge carriers due to polarization gradients, which can lead to increased currents. The insight gained from these findings yield the potential for multifunctional applications such as switchable UV sensitive micro- and nanoelectronic devices and bistable memristors.

  19. Photoluminescence properties of modulation-doped In{sub x}Al{sub 1–x}As/In{sub y}Ga{sub 1–y}As/In{sub x}Al{sub 1–x}As structures with strained inas and gaas nanoinserts in the quantum well

    SciTech Connect

    Galiev, G. B.; Vasil’evskii, I. S.; Klimov, E. A.; Klochkov, A. N.; Lavruhin, D. V.; Pushkarev, S. S.; Maltsev, P. P.

    2015-09-15

    The photoluminescence spectra of modulation-doped InAlAs/InGaAs/InAlAs heterostructures with quantum wells containing thin strained InAs and GaAs inserts are investigated. It is established that the insertion of pair InAs layers and/ or a GaAs transition barriers with a thickness of 1 nm into a quantum well leads to a change in the form and energy position of the photoluminescence spectra as compared with a uniform In{sub 0.53}Ga{sub 0.47}As quantum well. Simulation of the band structure shows that this change is caused by a variation in the energy and wave functions of holes. It is demonstrated that the use of InAs inserts leads to the localization of heavy holes near the InAs layers and reduces the energy of optical transitions, while the use of GaAs transition barriers can lead to inversion of the positions of the light- and heavy-hole subbands in the quantum well. A technique for separately controlling the light- and heavy-hole states by varying the thickness and position of the GaAs and InAs inserts in the quantum well is suggested.

  20. Effect of doping on amplitude modulation of space-charge wave in semiconductor quantum plasma

    NASA Astrophysics Data System (ADS)

    Banerjee, Sreyasi; Ghosh, Basudev

    2017-04-01

    To describe the modulational instability of space-charge waves in an n-type compensated semiconductor plasma, a nonlinear Schrödinger equation has been derived by using quantum hydrodynamical model and standard multiple scale perturbation technique. It has been shown that compensation factor (i.e. relative proportion of donor, acceptor and intrinsic carrier concentrations) and quantum diffraction parameter play important role in generating bright and dark envelope solitons within the semiconductor. Instability growth rate is also found to depend sensitively on the compensation factor and quantum diffraction parameter. From the linear dispersion relation it has been found that inclusion of quantum parameter gives rise to two new wave modes of purely quantum origin. Further the effect of compensation factor and quantum diffraction parameter on the linear dispersion characteristics has been analyzed. It has also been found that due to parabolicity of conduction band the group velocity of space-charge wave becomes dependent on compensation factor and quantum diffraction parameter.

  1. Thermal and Electrical Transport in Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Ravichandran, Jayakanth

    vacancies are employed to achieve band engineering. This method was used to obtain tunable transparent conducting properties and thermoelectric properties for heavily doped strontium titanate. The second aspect investigated is the use of strongly correlated materials for thermoelectricity. The cobaltates, specifically layered cobaltates, show large thermopower even at very large carrier densities. The coupling of thermopower and electrical conductivity is shown to be weaker for a strongly correlated material such as cobaltate, which opens up possibilities of complete decoupling of all three thermoelectric coefficients. Finally, the thermal properties of complex oxides, specifically in perovskite titanates, is addressed in detail. Thermal conductivity is demonstrated to be a sensitive probe for defects in a system, where processing conditions play a significant role in modulating the crystallinity of the material. The perovskite titanate superlattice system of strontium titanate and calcium titanate is used beat alloy limit. It also shows interesting period thickness dependent thermal properties. The possible origin of this effect is briefly discussed and future directions for this research is also elaborated in detail.

  2. Strain mediated coupling in magnetron sputtered multiferroic PZT/Ni-Mn-In/Si thin film heterostructure

    SciTech Connect

    Singh, Kirandeep; Kaur, Davinder; Singh, Sushil Kumar

    2014-09-21

    The strain mediated electrical and magnetic properties were investigated in PZT/Ni-Mn-In heterostructure deposited on Si (100) by dc/rf magnetron sputtering. X-ray diffraction pattern revealed that (220) orientation of Ni-Mn-In facilitate the (110) oriented tertragonal phase growth of PZT layer in PZT/Ni-Mn-In heterostructure. A distinctive peak in dielectric constant versus temperature plots around martensitic phase transformation temperature of Ni-Mn-In showed a strain mediated coupling between Ni-Mn-In and PZT layers. The ferroelectric measurement taken at different temperatures exhibits a well saturated and temperature dependent P-E loops with a highest value of P{sub sat}~55 μC/cm² obtained during martensite-austenite transition temperature region of Ni-Mn-In. The stress induced by Ni-Mn-In layer on upper PZT film due to structural transformation from martensite to austenite resulted in temperature modulated Tunability of PZT/Ni-Mn-In heterostructure. A tunability of 42% was achieved at 290 K (structural transition region of Ni-Mn-In) in these heterostructures. I-V measurements taken at different temperatures indicated that ohmic conduction was the main conduction mechanism over a large electric field range in these heterostructures. Magnetic measurement revealed that heterostructure was ferromagnetic at room temperature with a saturation magnetization of ~123 emu/cm³. Such multiferroic heterostructures exhibits promising applications in various microelectromechanical systems.

  3. Thin-film metallic glass: an effective diffusion barrier for Se-doped AgSbTe2 thermoelectric modules

    NASA Astrophysics Data System (ADS)

    Yu, Chia-Chi; Wu, Hsin-Jay; Deng, Ping-Yuan; Agne, Matthias T.; Snyder, G. Jeffrey; Chu, Jinn P.

    2017-03-01

    The thermal stability of joints in thermoelectric (TE) modules, which are degraded during interdiffusion between the TE material and the contacting metal, needs to be addressed in order to utilize TE technology for competitive, sustainable energy applications. Herein, we deposit a 200 nm-thick Zr-based thin-film metallic glass (TFMG), which acts as an effective diffusion barrier layer with low electrical contact resistivity, on a high-zT Se-doped AgSbTe2 substrate. The reaction couples structured with TFMG/TE are annealed at 673 K for 8–360 hours and analyzed by electron microscopy. No observable IMCs (intermetallic compounds) are formed at the TFMG/TE interface, suggesting the effective inhibition of atomic diffusion that may be attributed to the grain-boundary-free structure of TFMG. The minor amount of Se acts as a tracer species, and a homogeneous Se-rich region is found nearing the TFMG/TE interface, which guarantees satisfactory bonding at the joint. The diffusion of Se, which has the smallest atomic volume of all the elements from the TE substrate, is found to follow Fick’s second law. The calculated diffusivity (D) of Se in TFMG falls in the range of D~10‑20–10‑23(m2/s), which is 106~107 and 1012~1013 times smaller than those of Ni [10‑14–10‑17(m2/s)] and Cu [10‑8–10‑11(m2/s)] in Bi2Te3, respectively.

  4. Final Report for Award DE-SC0005403. Improved Electrochemical Performance of Strained Lattice Electrolytes via Modulated Doping

    SciTech Connect

    Hertz, Joshua L.; Prasad, Ajay K.

    2015-09-06

    The enclosed document provides a final report to document the research performed at the University of Delaware under Grant DE-SC0005403: Improved Electrochemical Performance of Strained Lattice Electrolytes via Modulated Doping. The ultimate goal of this project was to learn how to systematically strain the inter-atomic distance in thin ceramic films and how to use this newfound control to improve the ease by which oxygen ions can conduct through the films. Increasing the ionic conductivity of ceramics holds the promise of drastic improvements in the performance of solid oxide fuel cells, chemical sensors, gas permeation membranes, and related devices. Before this work, the experimental evidence advocating for strain-based techniques was often controversial and poorly characterized. Enabling much of this work was a new method to quickly create a very wide range of ceramic nanostructures that was established during the first phase of the project. Following this initial phase, we created a variety of promising nanostructured epitaxial films and multilayers with systematic variations in lattice mismatch and dopant content. Over the course of the work, a positive effect of tensile atomic strain on the oxygen conductivity was conclusively found using a few different forms of samples and experimental techniques. The samples were built by sputtering, an industrially scalable technique, and thus the technological implementation of these results may be economically feasible. Still, two other results consistently achieved over multiple efforts in this work give pause. The first of these results was that very specific, pristine surfaces upon which to build the nanostructures were strictly required in order to achieve measurable results. The second of these results was that compressively strained films with concomitant reductions in oxygen conductivity are much easier to obtain relative to tensile-strained films with increased conductivity.

  5. Thin-film metallic glass: an effective diffusion barrier for Se-doped AgSbTe2 thermoelectric modules

    PubMed Central

    Yu, Chia-Chi; Wu, Hsin-jay; Deng, Ping-Yuan; Agne, Matthias T.; Snyder, G. Jeffrey; Chu, Jinn P.

    2017-01-01

    The thermal stability of joints in thermoelectric (TE) modules, which are degraded during interdiffusion between the TE material and the contacting metal, needs to be addressed in order to utilize TE technology for competitive, sustainable energy applications. Herein, we deposit a 200 nm-thick Zr-based thin-film metallic glass (TFMG), which acts as an effective diffusion barrier layer with low electrical contact resistivity, on a high-zT Se-doped AgSbTe2 substrate. The reaction couples structured with TFMG/TE are annealed at 673 K for 8–360 hours and analyzed by electron microscopy. No observable IMCs (intermetallic compounds) are formed at the TFMG/TE interface, suggesting the effective inhibition of atomic diffusion that may be attributed to the grain-boundary-free structure of TFMG. The minor amount of Se acts as a tracer species, and a homogeneous Se-rich region is found nearing the TFMG/TE interface, which guarantees satisfactory bonding at the joint. The diffusion of Se, which has the smallest atomic volume of all the elements from the TE substrate, is found to follow Fick’s second law. The calculated diffusivity (D) of Se in TFMG falls in the range of D~10−20–10−23(m2/s), which is 106~107 and 1012~1013 times smaller than those of Ni [10−14–10−17(m2/s)] and Cu [10−8–10−11(m2/s)] in Bi2Te3, respectively. PMID:28327655

  6. Military applications for heterostructure microelectronics technology

    NASA Astrophysics Data System (ADS)

    Greiling, Paul; Kirkpatrick, Conilee; Valentine, Gary

    1995-09-01

    Military systems, whether radar, communications, electronic warfare (EW) or smart munitions, require superior device and IC performance. The performance advantages of heterostructure devices over standard Si CMOS, Si bipolar transistors or GaAs MESFETs has motivated major aerospace firms in the United States to develop Si, GaAs and InP-based heterojunction bipolar (HBT) and high electron mobility transistor (HEMT) technologies. In response to advanced system performance requirements, technology efforts are being pushed toward devices which can yield {T}/{R} modules with octave bandwidths, noise figures under 3 dB, output power of 20 W and power greater than 30%. Device technology development for satellite communications is being driven in part by the need for ultra low noise high output power with high power added efficiency with high MMTF. For these systems as well as EW applications, designers want to digitize the signal as close to the front end as possible. This is driving the development of a 100 GHz IC technology for A/D converters, synthesizers, MUX/DEMUXs, DDSs. and PRNs. Requirements for A/D converters with 16 bits @ 100-200 MHz up to 8-10 bits @ 10 GHz are appearing for advanced radars and EW systems. The military system requirements continue to drive the development of the newer, better and higher performance heterostructure device technologies.

  7. Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells

    PubMed Central

    2011-01-01

    Nonlinear charge transport parallel to the layers of p-modulation-doped GaInNAs/GaAs quantum wells (QWs) is studied both theoretically and experimentally. Experimental results show that at low temperature, T = 13 K, the presence of an applied electric field of about 6 kV/cm leads to the heating of the high mobility holes in the GaInNAs QWs, and their real-space transfer (RST) into the low-mobility GaAs barriers. This results in a negative differential mobility and self-generated oscillatory instabilities in the RST regime. We developed an analytical model based upon the coupled nonlinear dynamics of the real-space hole transfer and of the interface potential barrier controlled by space-charge in the doped GaAs layer. Our simulation results predict dc bias-dependent self-generated current oscillations with frequencies in the high microwave range. PMID:21711766

  8. Electric-field induced strain modulation of magnetization in Fe-Ga/Pb(Mg{sub 1/3}Nb{sub 2/3})-PbTiO{sub 3} magnetoelectric heterostructures

    SciTech Connect

    Zhang, Yue Wang, Zhiguang; Wang, Yaojin; Luo, Chengtao; Li, Jiefang; Viehland, Dwight

    2014-02-28

    Magnetostrictive Fe-Ga thin layers were deposited on 〈110〉-oriented Pb(Mg{sub 1/3}Nb{sub 2/3})-30%PbTiO{sub 3} (PMN-30%PT) substrates by pulsed laser deposition. The as-prepared heterostructures showed columnar arrays aligned in the out-of-plane direction. Transmission electron microscopy revealed nanocrystalline regions within the columnar arrays of the Fe-Ga film. The heterostructure exhibited a strong converse magnetoelectric coupling effect of up to 4.55 × 10{sup −7} s m{sup −1}, as well as an electric field tunability of the in-plane magnetic anisotropy. Furthermore, the remanent magnetization states of the Fe-Ga films can be reversibly and irreversibly changed by external electric fields, suggesting a promising and robust application in magnetic random access memories and spintronics.

  9. Zinc-oxide-based nanostructured materials for heterostructure solar cells

    SciTech Connect

    Bobkov, A. A.; Maximov, A. I.; Moshnikov, V. A. Somov, P. A.; Terukov, E. I.

    2015-10-15

    Results obtained in the deposition of nanostructured zinc-oxide layers by hydrothermal synthesis as the basic method are presented. The possibility of controlling the structure and morphology of the layers is demonstrated. The important role of the procedure employed to form the nucleating layer is noted. The faceted hexagonal nanoprisms obtained are promising for the fabrication of solar cells based on oxide heterostructures, and aluminum-doped zinc-oxide layers with petal morphology, for the deposition of an antireflection layer. The results are compatible and promising for application in flexible electronics.

  10. Oxides Heterostructures for Nanoelectronics

    SciTech Connect

    C Dubourdieu; I Gelard; O Salicio; G Saint-Girons; B Vilquin; G Hollinger

    2011-12-31

    We summarise in this paper the work of two groups focusing on the synthesis and characterisation of functional oxide for nanoelectronic applications. In the first section, we discuss the growth by liquid-injection MOCVD of oxides heterostructures. Interface engineering for the minimisation of silicate formation during the growth of polycrystalline SrTiO{sub 3} on Si is first presented. It is realised via the change of reactant flow or chemical nature at the Si surface. We then report on the epitaxy on oxide substrates of manganites films and superlattices and on their magnetic and electrical properties. La{sub 0.7}Sr{sub 0.3}MnO{sub 3} and La{sub 0.8}MnO{sub 3-{delta}} as well as multiferroic hexagonal ReMnO{sub 3} manganites are considered. We show that the film thickness and related strain may be used to tune the properties. Finally, we demonstrate the growth of MgO nanowires by CVD at a moderate temperature of 600 C, using gold as a catalyst. In the second section, we discuss the growth of epitaxial oxide heterostructures by MBE. First, the direct epitaxy of SrTiO{sub 3} on Si is considered. Issues and control of the SrTiO{sub 3}/Si interface are discussed. An abrupt interface is achieved. We show that SrTiO{sub 3} on Si can be used as a buffer layer for the epitaxy of various perovskite oxides such as LaAlO{sub 3} or La{sub 0.7}Sr0.3MnO{sub 3}. La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films are ferromagnetic and metallic at room temperature. The epitaxial growth of complex oxides on Si wafers opens up the route to the integration of a wide variety of functionalities in nanoelectronics. Finally, we discuss the monolithic integration of III-V compounds such as InP on Si using epitaxial SrTiO{sub 3} buffer layers for the future integration of optics on Si.

  11. Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs

    SciTech Connect

    Picraux, Samuel T; Dayeh, Shadi A

    2010-01-01

    Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure nanowires with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these nanowires for high-on currents and suppressed ambipolar behavior. Initial prototype devices resulted in a current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. These results demonstrate the potential of such asymmetric heterostructures (both in the semiconductor channel and metal-semiconductor barrier heights) for low-power and high performance electronics.

  12. Franckeite as a naturally occurring van der Waals heterostructure.

    PubMed

    Molina-Mendoza, Aday J; Giovanelli, Emerson; Paz, Wendel S; Niño, Miguel Angel; Island, Joshua O; Evangeli, Charalambos; Aballe, Lucía; Foerster, Michael; van der Zant, Herre S J; Rubio-Bollinger, Gabino; Agraït, Nicolás; Palacios, J J; Pérez, Emilio M; Castellanos-Gomez, Andres

    2017-02-13

    The fabrication of van der Waals heterostructures, artificial materials assembled by individual stacking of 2D layers, is among the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods, which are cumbersome and tend to suffer from poor control over the lattice orientations and the presence of unwanted interlayer adsorbates. Here, we present a different approach to fabricate ultrathin heterostructures by exfoliation of bulk franckeite which is a naturally occurring and air stable van der Waals heterostructure (composed of alternating SnS2-like and PbS-like layers stacked on top of each other). Presenting both an attractive narrow bandgap (<0.7 eV) and p-type doping, we find that the material can be exfoliated both mechanically and chemically down to few-layer thicknesses. We present extensive theoretical and experimental characterizations of the material's electronic properties and crystal structure, and explore applications for near-infrared photodetectors.

  13. Franckeite as a naturally occurring van der Waals heterostructure

    NASA Astrophysics Data System (ADS)

    Molina-Mendoza, Aday J.; Giovanelli, Emerson; Paz, Wendel S.; Niño, Miguel Angel; Island, Joshua O.; Evangeli, Charalambos; Aballe, Lucía; Foerster, Michael; van der Zant, Herre S. J.; Rubio-Bollinger, Gabino; Agraït, Nicolás; Palacios, J. J.; Pérez, Emilio M.; Castellanos-Gomez, Andres

    2017-02-01

    The fabrication of van der Waals heterostructures, artificial materials assembled by individual stacking of 2D layers, is among the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods, which are cumbersome and tend to suffer from poor control over the lattice orientations and the presence of unwanted interlayer adsorbates. Here, we present a different approach to fabricate ultrathin heterostructures by exfoliation of bulk franckeite which is a naturally occurring and air stable van der Waals heterostructure (composed of alternating SnS2-like and PbS-like layers stacked on top of each other). Presenting both an attractive narrow bandgap (<0.7 eV) and p-type doping, we find that the material can be exfoliated both mechanically and chemically down to few-layer thicknesses. We present extensive theoretical and experimental characterizations of the material's electronic properties and crystal structure, and explore applications for near-infrared photodetectors.

  14. Franckeite as a naturally occurring van der Waals heterostructure

    PubMed Central

    Molina-Mendoza, Aday J.; Giovanelli, Emerson; Paz, Wendel S.; Niño, Miguel Angel; Island, Joshua O.; Evangeli, Charalambos; Aballe, Lucía; Foerster, Michael; van der Zant, Herre S. J.; Rubio-Bollinger, Gabino; Agraït, Nicolás; Palacios, J. J.; Pérez, Emilio M.; Castellanos-Gomez, Andres

    2017-01-01

    The fabrication of van der Waals heterostructures, artificial materials assembled by individual stacking of 2D layers, is among the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods, which are cumbersome and tend to suffer from poor control over the lattice orientations and the presence of unwanted interlayer adsorbates. Here, we present a different approach to fabricate ultrathin heterostructures by exfoliation of bulk franckeite which is a naturally occurring and air stable van der Waals heterostructure (composed of alternating SnS2-like and PbS-like layers stacked on top of each other). Presenting both an attractive narrow bandgap (<0.7 eV) and p-type doping, we find that the material can be exfoliated both mechanically and chemically down to few-layer thicknesses. We present extensive theoretical and experimental characterizations of the material's electronic properties and crystal structure, and explore applications for near-infrared photodetectors. PMID:28194037

  15. Electronic properties of quasiperiodic heterostructures

    NASA Astrophysics Data System (ADS)

    Zárate, J. E.; Velasco, V. R.

    2002-01-01

    We study the electronic states of different GaAs-AlAs Fibonacci, Thue-Morse and Rudin-Shapiro quasiperiodic heterostructures grown along the [001] direction. We employ an empirical tight-binding Hamiltonian including spin-orbit coupling together with the surface Green-function matching method. We present results for different generations of the quasiperiodic heterostructures, formed by different building blocks. We compare these results with those of the constituent quantum wells and with those of heterostructures containing the same total number of GaAs and AlAs slabs after periodic repetition of the building blocks. The states in the energy regions near the conduction- and valence-band edges of GaAs do not exhibit any spectrum fragmentation. They show a strong localization of the local density of states in the GaAs layers, and they can be traced to the states of the isolated quantum wells.

  16. The visible transmittance and solar modulation ability of VO2 flexible foils simultaneously improved by Ti doping: an optimization and first principle study.

    PubMed

    Chen, Shi; Dai, Lei; Liu, Jianjun; Gao, Yanfeng; Liu, Xinling; Chen, Zhang; Zhou, Jiadong; Cao, Chuanxiang; Han, Penggang; Luo, Hongjie; Kanahira, Minoru

    2013-10-28

    The Mott phase transition compound vanadium dioxide (VO2) shows promise as a thermochromic smart material for the improvement of energy efficiency and comfort in a number of applications. However, the use of VO2 has been restricted by its low visible transmittance (Tvis) and limited solar modulation ability (ΔTsol). Many efforts have been made to improve both of these limitations, but progress towards the optimization of one aspect has always come at the expense of the other. This paper reports that Ti doping results in the improvement of both the Tvis and ΔTsol of VO2-nanoparticle-derived flexible foils to the best levels yet reported. Compared with an undoped VO2 foil, a 15% increase (from 46.1% to 53%) in Tvis and a 28% increase (from 13.4% to 17.2%) in ΔTsol are achieved at a Ti doping level of 1.1%, representing the best performance reported for similar foils or films prepared using various methods. Only a defined doping level of less than 3% is beneficial for simultaneous improvement in Tvis and ΔTsol. First principle calculations suggest that an increase in the intrinsic band gap of VO2 (M) and the reduced electron density at Fermi level of VO2 (R) cooperate to result in the improvement of ΔTsol and that an enhancement in the optical band gap of VO2 (M) leads to the increase of Tvis.

  17. Quantum anomalous Hall effect in magnetic insulator heterostructure.

    PubMed

    Xu, Gang; Wang, Jing; Felser, Claudia; Qi, Xiao-Liang; Zhang, Shou-Cheng

    2015-03-11

    On the basis of ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a nontrivial band gap up to 38 meV. The principle behind our prediction is that the band inversion between two topologically trivial ferromagnetic insulators can result in a nonzero Chern number, which offers a better way to realize the quantum anomalous Hall state without random magnetic doping. In addition, a simple effective model is presented to describe the basic mechanism of spin polarized band inversion in this system. Moreover, we predict that 3D quantum anomalous Hall insulator could be realized in (Bi2/3Cr1/3)2Te3 /GdI2 superlattice.

  18. Characterization of equine urinary metabolites of selective androgen receptor modulators (SARMs) S1, S4 and S22 for doping control purposes.

    PubMed

    Hansson, Annelie; Knych, Heather; Stanley, Scott; Thevis, Mario; Bondesson, Ulf; Hedeland, Mikael

    2015-08-01

    Selective androgen receptor modulators, SARMs, constitute a class of compounds with anabolic properties but with few androgenic side-effects. This makes them possible substances of abuse and the World Anti-Doping Agency (WADA) has banned the entire class of substances. There have been several cases of illicit use of aryl propionamide SARMs in human sports and in 2013, 13 cases were reported. These substances have been found to be extensively metabolized in humans, making detection of metabolites necessary for doping control. SARMs are also of great interest to equine doping control, but the in vivo metabolite pattern and thus possible analytical targets have not been previously studied in this species. In this study, the urinary metabolites of the SARMs S1, S4, and S22 in horses were studied after intravenous injection, using ultra high performance liquid chromatography coupled to quadrupole time-of-flight mass spectrometry (UHPLC-QToF-MS). Eight different metabolites were found for SARM S1, nine for SARM S4, and seven for SARM S22. The equine urinary metabolite profiles differed significantly from those of humans. The parent compounds were only detected for SARMs S4 and S22 and only at the first sampling time point at 3 h post administration, making them unsuitable as target compounds. For all three SARMs tested, the metabolite yielding the highest response had undergone amide hydrolysis, hydroxylation and sulfonation. The resulting phase II metabolites (4-nitro-3-trifluoro-methyl-phenylamine sulfate for SARMs S1 and S4 and 4-cyano-3-trifluoro-methyl-phenylamine sulfate for SARM S22) are proposed as analytical targets for use in equine doping control.

  19. Identification of selected in vitro generated phase-I metabolites of the steroidal selective androgen receptor modulator MK-0773 for doping control purposes.

    PubMed

    Lagojda, Andreas; Kuehne, Dirk; Krug, Oliver; Thomas, Andreas; Wigger, Tina; Karst, Uwe; Schänzer, Wilhelm; Thevis, Mario

    2016-01-01

    Research into developing anabolic agents for various therapeutic purposes has been pursued for decades. As the clinical utility of anabolic-androgenic steroids has been found to be limited because of their lack of tissue selectivity and associated off-target effects, alternative drug entities have been designed and are commonly referred to as selective androgen receptor modulators (SARMs). While most of these SARMs are of nonsteroidal structure, the drug candidate MK-0773 comprises a 4-aza-steroidal nucleus. Besides the intended therapeutic use, SARMs have been found to be illicitly distributed and misused as doping agents in sport, necessitating frequently updated doping control analytical assays. As steroidal compounds reportedly undergo considerable metabolic transformations, the phase-I metabolism of MK-0773 was simulated using human liver microsomal (HLM) preparations and electrochemical conversion. Subsequently, major metabolic products were identified and characterized employing liquid chromatography-high-resolution/high- accuracy tandem mass spectrometry with electrospray (ESI) and atmospheric pressure chemical ionization (APCI) as well as nuclear magnetic resonance (NMR) spectroscopy. MK-0773 produced numerous phase-I metabolites under the chosen in vitro incubation reactions, mostly resulting from mono- and bisoxygenation of the steroid. HLM yielded at least 10 monooxygenated species, while electrochemistry-based experiments resulted predominantly in three monohydroxylated metabolites. Elemental composition data and product ion mass spectra were generated for these analytes, ESI/APCI measurements corroborated the formation of at least two N-oxygenated metabolites, and NMR data obtained from electrochemistry-derived products supported structures suggested for three monohydroxylated compounds. Hereby, the hydroxylation of the A-ring located N- bound methyl group was found to be of particular intensity. In the absence of controlled elimination studies, the

  20. Morphology-modulation of SnO2 Hierarchical Architectures by Zn Doping for Glycol Gas Sensing and Photocatalytic Applications

    PubMed Central

    Zhao, Qinqin; Ju, Dianxing; Deng, Xiaolong; Huang, Jinzhao; Cao, Bingqiang; Xu, Xijin

    2015-01-01

    The morphology of SnO2 nanospheres was transformed into ultrathin nanosheets assembled architectures after Zn doping by one-step hydrothermal route. The as-prepared samples were characterized in detail by various analytical techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and nitrogen adsorption-desorption technique. The Zn-doped SnO2 nanostructures proved to be the efficient gas sensing materials for a series of flammable and explosive gases detection, and photocatalysts for the degradation of methyl orange (MO) under UV irradiation. It was observed that both of the undoped and Zn-doped SnO2 after calcination exhibited tremendous gas sensing performance toward glycol. The response (S = Ra/Rg) of Zn-doped SnO2 can reach to 90 when the glycol concentration is 100 ppm, which is about 2 times and 3 times higher than that of undoped SnO2 sensor with and without calcinations, respectively. The result of photocatalytic activities demonstrated that MO dye was almost completely degraded (~92%) by Zn-doped SnO2 in 150 min, which is higher than that of others (MO without photocatalyst was 23%, undoped SnO2 without and with calcination were 55% and 75%, respectively). PMID:25597269

  1. CNT-based saturable absorbers with scalable modulation depth for Thulium-doped fiber lasers operating at 1.9 μm

    PubMed Central

    Sobon, Grzegorz; Duzynska, Anna; Świniarski, Michał; Judek, Jarosław; Sotor, Jarosław; Zdrojek, Mariusz

    2017-01-01

    In this work, we demonstrate a comprehensive study on the nonlinear parameters of carbon nanotube (CNT) saturable absorbers (SA) as a function of the nanotube film thickness. We have fabricated a set of four saturable absorbers with different CNT thickness, ranging from 50 to 200 nm. The CNTs were fabricated via a vacuum filtration technique and deposited on fiber connector end facets. Each SA was characterized in terms of nonlinear transmittance (i.e. optical modulation depth) and tested in a Thulium-doped fiber laser. We show, that increasing the thickness of the CNT layer significantly increases the modulation depth (up to 17.3% with 200 nm thick layer), which strongly influences the central wavelength of the laser, but moderately affects the pulse duration. It means, that choosing the SA with defined CNT thickness might be an efficient method for wavelength-tuning of the laser, without degrading the pulse duration. In our setup, the best performance in terms of bandwidth and pulse duration (8.5 nm and 501 fs, respectively) were obtained with 100 nm thick CNT layer. This is also, to our knowledge, the first demonstration of a fully polarization-maintaining mode-locked Tm-doped laser based on CNT saturable absorber. PMID:28368014

  2. Assembly of quasicrystalline photonic heterostructures

    DOEpatents

    Grier, David G.; Roichman, Yael; Man, Weining; Chaikin, Paul Michael; Steinhardt, Paul Joseph

    2011-07-19

    A method and system for assembling a quasicrystalline heterostructure. A plurality of particles is provided with desirable predetermined character. The particles are suspended in a medium, and holographic optical traps are used to position the particles in a way to achieve an arrangement which provides a desired property.

  3. Assembly of quasicrystalline photonic heterostructures

    DOEpatents

    Grier, David G.; Roichman, Yael; Man, Weining; Chaikin, Paul Michael; Steinhardt, Paul Joseph

    2013-03-12

    A method and system for assembling a quasicrystalline heterostructure. A plurality of particles is provided with desirable predetermined character. The particles are suspended in a medium, and holographic optical traps are used to position the particles in a way to achieve an arrangement which provides a desired property.

  4. Dynamic in situ visualization of voltage-driven magnetic domain evolution in multiferroic heterostructures.

    PubMed

    Gao, Ya; Hu, Jia-Mian; Wu, Liang; Nan, C W

    2015-12-23

    Voltage control of magnetism in multiferroic heterostructures provides a promising solution to the excessive heating in spintronic devices. Direct observation of voltage-modulated magnetic domain evolution dynamics is desirable for studying the mechanism of the voltage control of magnetism at mesoscale, but has remained challenging. Here we explored a characterization method for the dynamic in situ evolution of pure voltage modulated magnetic domains in the heterostructures by employing the scanning Kerr microscopy function in the magneto optic Kerr effect system. The local magnetization reorientation of a Ni/PMN-PT heterostructure were characterized under sweeping applied voltage on the PMN-PT single crystal, and the results show that the magnetization rotation angle in the local regions is much greater than that obtained from macroscopic magnetization hysteresis loops.

  5. Dynamic in situ visualization of voltage-driven magnetic domain evolution in multiferroic heterostructures

    NASA Astrophysics Data System (ADS)

    Gao, Ya; Hu, Jia-Mian; Wu, Liang; Nan, C. W.

    2015-12-01

    Voltage control of magnetism in multiferroic heterostructures provides a promising solution to the excessive heating in spintronic devices. Direct observation of voltage-modulated magnetic domain evolution dynamics is desirable for studying the mechanism of the voltage control of magnetism at mesoscale, but has remained challenging. Here we explored a characterization method for the dynamic in situ evolution of pure voltage modulated magnetic domains in the heterostructures by employing the scanning Kerr microscopy function in the magneto optic Kerr effect system. The local magnetization reorientation of a Ni/PMN-PT heterostructure were characterized under sweeping applied voltage on the PMN-PT single crystal, and the results show that the magnetization rotation angle in the local regions is much greater than that obtained from macroscopic magnetization hysteresis loops.

  6. Effect of strain on voltage-controlled magnetism in BiFeO₃-based heterostructures.

    PubMed

    Wang, J J; Hu, J M; Yang, T N; Feng, M; Zhang, J X; Chen, L Q; Nan, C W

    2014-04-01

    Voltage-modulated magnetism in magnetic/BiFeO3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO3-based heterostructures.

  7. Effect of strain on voltage-controlled magnetism in BiFeO3-based heterostructures

    PubMed Central

    Wang, J. J.; Hu, J. M.; Yang, T. N.; Feng, M.; Zhang, J. X.; Chen, L. Q.; Nan, C. W.

    2014-01-01

    Voltage-modulated magnetism in magnetic/BiFeO3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO3-based heterostructures. PMID:24686503

  8. LETTER TO THE EDITOR: Efficient photocarrier injection in a transition metal oxide heterostructure

    NASA Astrophysics Data System (ADS)

    Muraoka, Y.; Yamauchi, T.; Ueda, Y.; Hiroi, Z.

    2002-12-01

    An efficient method for doping a transition metal oxide (TMO) with hole carriers is presented: photocarrier injection (PCI) in an oxide heterostructure. It is shown that an insulating vanadium dioxide (VO2) film is rendered metallic under light irradiation by PCI from an n-type titanium dioxide (TiO2) substrate doped with Nb. Consequently, a large photoconductivity, which is exceptional for TMOs, is found in the VO2/TiO2:Nb heterostructure. We propose an electronic band structure where photoinduced holes created in TiO2:Nb can be transferred into the filled V 3d band via the low-lying O 2p band of VO2.

  9. Graphene/Si-nanowire heterostructure molecular sensors

    PubMed Central

    Kim, Jungkil; Oh, Si Duk; Kim, Ju Hwan; Shin, Dong Hee; Kim, Sung; Choi, Suk-Ho

    2014-01-01

    Wafer-scale graphene/Si-nanowire (Si-NW) array heterostructures for molecular sensing have been fabricated by vertically contacting single-layer graphene with high-density Si NWs. Graphene is grown in large scale by chemical vapour deposition and Si NWs are vertically aligned by metal-assisted chemical etching of Si wafer. Graphene plays a key role in preventing tips of vertical Si NWs from being bundled, thereby making Si NWs stand on Si wafer separately from each other under graphene, a critical structural feature for the uniform Schottky-type junction between Si NWs and graphene. The molecular sensors respond very sensitively to gas molecules by showing 37 and 1280% resistance changes within 3.5/0.15 and 12/0.15 s response/recovery times under O2 and H2 exposures in air, respectively, highest performances ever reported. These results together with the sensor responses in vacuum are discussed based on the surface-transfer doping mechanism. PMID:24947403

  10. Power factor improvement and thermal conductivity reduction---By band engineering and modulation-doping in nanocomposites

    NASA Astrophysics Data System (ADS)

    Yu, Bo

    of this thesis, I will talk about how I applied the same technique to the Thalllium (Tl) doped Lead Telluride (PbTe) which was reported for an improved Seebeck coefficient due to the creation of resonant states near the Fermi level, leading to a high ZT of about 1.5 at around 500 °C. I showed that comparing with conventional tedious, energy consuming melting method, our fabrication process could produce such material with competing thermoelectric performance, but much simpler and more energy effective. Potential problems and perspectives for the future study are also discussed. The 4th chapter of my thesis deals with the challenge that in addition to those nanostructuring routes that mainly reduce the thermal conductivity to improve the performance, strategies to enhance the power factor (enhancing sigma or S or both) are also essential for the next generation of thermoelectric materials. In this part, modulation-doping which has been widely used in thin film semiconductor industry was studied in 3-D bulk thermoelectric nanocomposites to enhance the carrier mobility and therefore the electrical conductivity sigma. We proved in our study that by proper materials design, an improved power factor and a reduced thermal conductivity could be simultaneously obtained in the n-type SiGe nanocomposite material, which in turn gives an about 30% enhancement in the final ZT value. In order to further improve the materials performance or even apply this strategy to other materials systems, I also provided discussions at the end of chapter. In the last chapter, the structural and transport properties of a new thermoelectric compound Cu2Se was studied which was originally regarded as a superionic conductor. The beta-phase of such material possesses a natural superlattice-like structure, therefore resulting in a low lattice thermal conductivity of 0.4--0.5 Wm-1K-1 and a high peak ZT value of ˜1.6 at around 700 °C. I also studied the phase transition behavior between the cubic

  11. White electroluminescence of n-ZnO:Al/p-diamond heterostructure devices

    NASA Astrophysics Data System (ADS)

    Yang, Can; Wang, Xiao-Ping; Wang, Li-Jun; Pan, Xiu-Fang; Li, Song-Kun; Jing, Long-Wei

    2013-08-01

    An n-ZnO:Al/p-boron-doped diamond heterostructure electroluminescent device is produced, and a rectifying behavior can be observed. The electroluminescence spectrum at room temperature exhibits two visible bands centred at 450 nm-485 nm (blue emission) and 570 nm-640 nm (yellow emission). Light emission with a luminance of 15 cd/m2 is observed from the electroluminescent device at a forward applied voltage of 85 V, which is distinguished from white light by the naked eye.

  12. In vitro metabolism studies on the selective androgen receptor modulator (SARM) LG121071 and its implementation into human doping controls using liquid chromatography-mass spectrometry.

    PubMed

    Knoop, Andre; Krug, Oliver; Vincenti, Marco; Schänzer, Wilhelm; Thevis, Mario

    2015-01-01

    LG121071 is a member of the tetrahydroquinolinone-based class of selective androgen receptor modulator (SARM) drug candidates. These nonsteroidal compounds are supposed to act as full anabolic agents with reduced androgenic properties. As SARMs provide an alternative to anabolic androgenic steroids, they represent an emerging class of potential doping substances abused by athletes for illicit performance enhancement. According to the World Anti-Doping Agency's regulations, SARMs are banned substances and part of the Prohibited List since 2008. In consideration of the increasing number of adverse analytical findings in doping controls caused by SARMs abuse, potential drug candidates such as LG121071 have been proactively investigated to enable a timely integration into routine testing procedures even though clinical trials are not yet complete. In the present approach, the collision-induced dissociation (CID) of LG121071 was characterized by means of electrospray ionization-high resolution/high accuracy mass spectrometry, MS(n), and isotope labeling experiments. Interestingly, the even-electron precursor ion [M + H](+) at m/z 297 was found to produce a radical cation at m/z 268 under CID conditions, violating the even-electron rule that commonly applies. For doping control purposes, metabolites were generated in vitro and a detection method for urine samples based on liquid chromatography-tandem mass spectrometry was established. The overall metabolic conversion of LG121071 was modest, yielding primarily mono-, bis- and trishydroxylated species. Notable, however, was the identification of a glucuronic acid conjugate of the intact drug, attributed to an N-glucuronide structure. The sample preparation procedure included the enzymatic hydrolysis of glucuronides prior to liquid-liquid extraction, allowing intact LG121071 to be measured, as well as the corresponding phase-I metabolites. The method was characterized concerning inter alia lower limit of detection (0

  13. Photocatalytic enhancement of TiO2 by B and Zr co-doping and modulation of microstructure

    NASA Astrophysics Data System (ADS)

    Fu, Chengxin; Gong, Yinyan; Wu, Yitao; Liu, Jiaqi; Zhang, Zhen; Li, Can; Niu, Lengyuan

    2016-08-01

    Visible-light photodegradation test revealed that B and Zr co-doping can raise the photocatalytic ability of the undoped TiO2 by a fold. XRD crystallography and Raman phonon spectroscopy measurements suggest that the Zr4+ ions replace the Ti4+ ions while the B3+ ions occupy the interstitial sites, expanding the unit-cell volume and reducing crystallite size. The incorporation of interstitial boron dopants creates oxygen vacancies (Ovrad rad) and reduce Ti4+ to Ti3+ to form [Ovrad rad -Ti3+]+, which traps the carriers and prolongs carrier lifetime. Moreover, Zr4+ ions replace Ti4+ ions and form impurity levels, which could improve visible light response. The co-doped samples are benefited from both B interstitials and Zr substitutes.

  14. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  15. Modulating optical rectification, second and third harmonic generation of doped quantum dots: Interplay between hydrostatic pressure, temperature and noise

    NASA Astrophysics Data System (ADS)

    Ganguly, Jayanta; Saha, Surajit; Bera, Aindrila; Ghosh, Manas

    2016-10-01

    We examine the profiles of optical rectification (OR), second harmonic generation (SHG) and third harmonic generation (THG) of impurity doped QDs under the combined influence of hydrostatic pressure (HP) and temperature (T) in presence and absence of Gaussian white noise. Noise has been incorporated to the system additively and multiplicatively. In order to study the above nonlinear optical (NLO) properties the doped dot has been subjected to a polarized monochromatic electromagnetic field. Effect of application of noise is nicely reflected through alteration of peak shift (blue/red) and variation of peak height (increase/decrease) of above NLO properties as temperature and pressure are varied. All such changes again sensitively depends on mode of application (additive/multiplicative) of noise. The remarkable influence of interplay between noise strength and its mode of application on the said profiles has also been addressed. The findings illuminate fascinating role played by noise in tuning above NLO properties of doped QD system under the active presence of both hydrostatic pressure and temperature.

  16. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE PAGES

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; ...

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  17. Regulating Mid-infrared to Visible Fluorescence in Monodispersed Er3+-doped La2O2S (La2O2SO4) Nanocrystals by Phase Modulation

    NASA Astrophysics Data System (ADS)

    Pan, Qiwen; Yang, Dandan; Kang, Shiliang; Qiu, Jianrong; Dong, Guoping

    2016-11-01

    Rare earth doped mid-infrared (MIR) fluorescent sources have been widely investigated due to their various potential applications in the fields of communication, chemical detecting, medical surgery and so forth. However, with emission wavelength extended to MIR, multiphonon relaxation process that strongly quenched the MIR emission is one of the greatest challenges for such practical applications. In our design, we have described a controllable gas-aided annealing strategy to modulate the phase, crystal size, morphology and fluorescent performance of a material simultaneously. Uniform and monodispersed Er3+-doped La2O2S and La2O2SO4 nanocrystals with a similar lattice structure, crystallinity, diameter and morphology have been introduced to investigate the impact of multiphonon relaxation on luminescence performance. Detailed spectroscopic evolutions in the region of MIR, near-infrared (NIR), visible upconversion (UC) and their corresponding decay times provide insight investigation into the fluorescent mechanism caused by multiphonon relaxation. A possible energy transfer model has also been established. Our results present direct observation and mechanistic investigation of fluorescent evolution in multiphonon relaxation process, which is conductive to design MIR fluorescent materials in the future. To the best of our knowledge, it is the first investigation on MIR fluorescent performance of La2O2S nanocrystals, which may find various applications in many photoelectronic fields.

  18. Regulating Mid-infrared to Visible Fluorescence in Monodispersed Er3+-doped La2O2S (La2O2SO4) Nanocrystals by Phase Modulation

    PubMed Central

    Pan, Qiwen; Yang, Dandan; Kang, Shiliang; Qiu, Jianrong; Dong, Guoping

    2016-01-01

    Rare earth doped mid-infrared (MIR) fluorescent sources have been widely investigated due to their various potential applications in the fields of communication, chemical detecting, medical surgery and so forth. However, with emission wavelength extended to MIR, multiphonon relaxation process that strongly quenched the MIR emission is one of the greatest challenges for such practical applications. In our design, we have described a controllable gas-aided annealing strategy to modulate the phase, crystal size, morphology and fluorescent performance of a material simultaneously. Uniform and monodispersed Er3+-doped La2O2S and La2O2SO4 nanocrystals with a similar lattice structure, crystallinity, diameter and morphology have been introduced to investigate the impact of multiphonon relaxation on luminescence performance. Detailed spectroscopic evolutions in the region of MIR, near-infrared (NIR), visible upconversion (UC) and their corresponding decay times provide insight investigation into the fluorescent mechanism caused by multiphonon relaxation. A possible energy transfer model has also been established. Our results present direct observation and mechanistic investigation of fluorescent evolution in multiphonon relaxation process, which is conductive to design MIR fluorescent materials in the future. To the best of our knowledge, it is the first investigation on MIR fluorescent performance of La2O2S nanocrystals, which may find various applications in many photoelectronic fields. PMID:27845417

  19. Magnetooptical study of Zeeman effect in Mn modulation-doped InAs/InGaAs/InAlAs quantum well structures

    SciTech Connect

    Terent'ev, Ya. V.; Danilov, S. N.; Plank, H.; Loher, J.; Schuh, D.; Bougeard, D.; Weiss, D.; Ganichev, S. D.; Durnev, M. V.; Ivanov, S. V.; Tarasenko, S. A.; Rozhansky, I. V.; Yakovlev, D. R.

    2015-09-21

    We report on a magneto-photoluminescence (PL) study of Zeeman effect in Mn modulation-doped InAs/InGaAs/InAlAs quantum wells (QW). Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry, both lines split into two circularly polarized components. While temperature and magnetic field dependence of the splitting are well described by the Brillouin function, providing an evidence for exchange interaction with spin polarized manganese ions, the value of the splitting exceeds by two orders of magnitude the value of the giant Zeeman splitting estimated for the average Mn density in QW obtained by the secondary ion mass spectroscopy.

  20. Heterostructures of Topological Insulators and Superconductors

    NASA Astrophysics Data System (ADS)

    Lababidi, Mahmoud

    show that triplet pairing correlations are induced by spin-flip scattering at the interface. We verify that the interface spectrum at sub-gap energies is well described by the Fu-Kane model even for strongly coupled S and TI. These sub-gap modes are interface states with spectral weight penetrating well into the superconductor. We extract the phenomenological parameters of the phenomenological Fu-Kane model from our microscopic calculations, and find they are strongly renormalized from the bulk material parameters. Building upon such understanding of single TI-S interface, we move on to examine a TI surface in contact with two superconductors with a phase bias, namely a Josephson junction patterned on the TI surface and mediated by the helical metal. A short Josephson junction of this kind at a phase bias of pi is known to give rise to exotic quasiparticle excitations known as Majorana fermions with a linear dispersion, E ˜ k. Our self-consistent calculation of the Andreev bound states spectrum reveals, for the first time, a new regime with very different physics in these devices. We show that the subgap spectrum becomes nearly flat at zero energy when the chemical potential is sufficiently away from the Dirac point. The flat dispersion is well approximated by E ˜ k N, where N scales with the chemical potential. We find a similar linear-to-flat dispersion evolution also occurs for the subgap spectrum of a periodic superconducting proximity structure, such as a TI surface in contact with a striped superconductor. The systematic microscopic study of TI-S heterostructures helps interpret the data from ongoing experiments on these structures. The formalism developed also forms the basis for subsequent investigation of more complicated layered materials such as the periodic array of magnetically doped TI and S which is argued to give rise to an exotic topological superconductor known as Weyl superconductor.

  1. Strain and water effects on the electronic structure and chemical activity of in-plane graphene/silicene heterostructure

    NASA Astrophysics Data System (ADS)

    Kistanov, Andrey A.; Cai, Yongqing; Zhang, Yong-Wei; Dmitriev, Sergey V.; Zhou, Kun

    2017-03-01

    By using first-principles calculations, the electronic structure of planar and strained in-plane graphene/silicene heterostructure is studied. The heterostructure is found to be metallic in a strain range from  ‑7% (compression) to  +7% (tension). The effect of compressive/tensile strain on the chemical activity of the in-plane graphene/silicene heterostructure is examined by studying its interaction with the H2O molecule. It shows that compressive/tensile strain is able to increase the binding energy of H2O compared with the adsorption on a planar surface, and the charge transfer between the water molecule and the graphene/silicene sheet can be modulated by strain. Moreover, the presence of the boron-nitride (BN)-substrate significantly influences the chemical activity of the graphene/silicene heterostructure upon its interaction with the H2O molecule and may cause an increase/decrease of the charge transfer between the H2O molecule and the heterostructure. These findings provide insights into the modulation of electronic properties of the in-plane free-standing/substrate-supported graphene/silicene heterostructure, and render possible ways to control its electronic structure, carrier density and redox characteristics, which may be useful for its potential applications in nanoelectronics and gas sensors.

  2. Silicon-based silicon-germanium-tin heterostructure photonics.

    PubMed

    Soref, Richard

    2014-03-28

    The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components.

  3. Silicon-based silicon–germanium–tin heterostructure photonics

    PubMed Central

    Soref, Richard

    2014-01-01

    The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components. PMID:24567479

  4. Epitaxial Halide Perovskite Lateral Double Heterostructure.

    PubMed

    Wang, Yiping; Chen, Zhizhong; Deschler, Felix; Sun, Xin; Lu, Toh-Ming; Wertz, Esther A; Hu, Jia-Mian; Shi, Jian

    2017-03-28

    Epitaxial III-V semiconductor heterostructures are key components in modern microelectronics, electro-optics, and optoelectronics. With superior semiconducting properties, halide perovskite materials are rising as promising candidates for coherent heterostructure devices. In this report, spinodal decomposition is proposed and experimentally implemented to produce epitaxial double heterostructures in halide perovskite system. Pristine epitaxial mixed halide perovskites rods and films were synthesized via van der Waals epitaxy by chemical vapor deposition method. At room temperature, photon was applied as a knob to regulate the kinetics of spinodal decomposition and classic coarsening. By this approach, halide perovskite double heterostructures were created carrying epitaxial interfaces and outstanding optical properties. Reduced Fröhlich electron-phonon coupling was discovered in coherent halide double heterostructure, which is hypothetically attributed to the classic phonon confinement effect widely existing in III-V double heterostructures. As a proof-of-concept, our results suggest that halide perovskite-based epitaxial heterostructures may be promising for high-performance and low-cost optoelectronics, electro-optics, and microelectronics. Thus, ultimately, for practical device applications, it may be worthy to pursue these heterostructures via conventional vapor phase epitaxy approaches widely practised in III-V field.

  5. Band-gap modulation via gallium substitution in cerium doped gadolinium aluminum garnet using a mixed fuel combustion approach

    SciTech Connect

    Tyagi, Mohit; Pitale, Shreyas S.; Ghosh, Manoranjan; Shinde, Seema

    2014-04-24

    Cerium doped Gadolinium garnets (Gd{sub 3}Al{sub x}Ga{sub 5−x}O{sub 12} where 0≤x≤5) are synthesized via combustion synthesis using mixture of urea and glycine fuels. A 4h Post annealing at 1400 oC is found to be necessary for pure phase formation. Lattice spacing variation as a result of partial or total Ga substitution at Al site was mapped by X-ray diffraction. Photoluminescence emission of Ce shifts as a consequence of Ga substitution and therefore suggests a local re-adjustment of crystal field around activator site.

  6. Designed Synthesis of van der Waals Heterostructures: The Power of Kinetic Control.

    PubMed

    Alemayehu, Matti B; Falmbigl, Matthias; Ta, Kim; Ditto, Jeffrey; Medlin, Douglas L; Johnson, David C

    2015-12-14

    Selecting specific 2D building blocks and specific layering sequences of van der Waals heterostructures should allow the formation of new materials with designed properties for specific applications. Unfortunately, the synthetic ability to prepare such structures at will, especially in a manner that can be manufactured, does not exist. Herein, we report the targeted synthesis of new metal-semiconductor heterostructures using the modulated elemental-reactant technique to nucleate specific 2D building blocks, control their thickness, and avoid epitaxial structures with long-range order. The building blocks, VSe2 and GeSe2 , have different crystal structures, which inhibits cation intermixing. The precise control of this approach enabled us to synthesize heterostructures containing GeSe2 monolayers alternating with VSe2 structural units with specific sequences. The transport properties systematically change with nanoarchitecture and a charge-density wave-like transition is observed.

  7. Periodic potentials in hybrid van der Waals heterostructures formed by supramolecular lattices on graphene

    NASA Astrophysics Data System (ADS)

    Gobbi, Marco; Bonacchi, Sara; Lian, Jian X.; Liu, Yi; Wang, Xiao-Ye; Stoeckel, Marc-Antoine; Squillaci, Marco A.; D'Avino, Gabriele; Narita, Akimitsu; Müllen, Klaus; Feng, Xinliang; Olivier, Yoann; Beljonne, David; Samorì, Paolo; Orgiu, Emanuele

    2017-03-01

    The rise of 2D materials made it possible to form heterostructures held together by weak interplanar van der Waals interactions. Within such van der Waals heterostructures, the occurrence of 2D periodic potentials significantly modifies the electronic structure of single sheets within the stack, therefore modulating the material properties. However, these periodic potentials are determined by the mechanical alignment of adjacent 2D materials, which is cumbersome and time-consuming. Here we show that programmable 1D periodic potentials extending over areas exceeding 104 nm2 and stable at ambient conditions arise when graphene is covered by a self-assembled supramolecular lattice. The amplitude and sign of the potential can be modified without altering its periodicity by employing photoreactive molecules or their reaction products. In this regard, the supramolecular lattice/graphene bilayer represents the hybrid analogue of fully inorganic van der Waals heterostructures, highlighting the rich prospects that molecular design offers to create ad hoc materials.

  8. Modulating nonlinear optical properties of impurity doped quantum dots via the interplay between anisotropy and Gaussian white noise

    NASA Astrophysics Data System (ADS)

    Sarkar, Sucharita; Ghosh, Arghya Pratim; Mandal, Arkajit; Ghosh, Manas

    2016-02-01

    The influence of anisotropy on various nonlinear optical (NLO) properties such as total optical absorption coefficient (TOAC), nonlinear optical rectification (NOR), second harmonic generation (SHG) and third harmonic generation (THG) of impurity doped quantum dots (QDs) have been investigated in presence and absence of noise. Noise has been applied to the system additively and multiplicatively. The impurity potential is modeled by a Gaussian function and the noise applied being Gaussian white noise. A perpendicular magnetic field emerges out as a confinement source and a static external electric field has been applied. Profiles of the optical properties have been monitored as a function of incident photon energy for different values of anisotropy. In this connection the role of mode of application of noise (additive/multiplicative) has also been analysed. The interplay between noise and anisotropy has been found to profoundly affect the NLO properties. The investigation reveals that there are only one or two anisotropy regimes (depending on the particular NLO property under consideration) where noise-induced enhancement of the NLO property can be realized. Thus, anisotropy appears to be the central parameter by which the noise-induced enhancement of NLO properties of doped QD systems can be tailored.

  9. Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness

    SciTech Connect

    Wang Cong; Jin Kuijuan; Zhao Ruiqiang; Lu Huibin; Guo Haizhong; Ge Chen; He Meng; Wang Can; Yang Guozhen

    2011-05-02

    One order larger photovoltage is obtained with critical thicknesses of La{sub 0.9}Sr{sub 0.1}MnO{sub 3} films in both kinds of heterostructures of La{sub 0.9}Sr{sub 0.1}MnO{sub 3}/SrTiO{sub 3} (0.8 wt % Nb-doped) and La{sub 0.9}Sr{sub 0.1}MnO{sub 3}/Si fabricated at various oxygen pressures. Our self-consistent calculation reveals that the critical thickness of the La{sub 0.9}Sr{sub 0.1}MnO{sub 3} film with the ultimate value of photovoltage is just the thickness of the depletion layer of La{sub 0.9}Sr{sub 0.1}MnO{sub 3} in both heterojunctions, respectively.

  10. Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators.

    PubMed

    Yu, Hui; Pantouvaki, Marianna; Van Campenhout, Joris; Korn, Dietmar; Komorowska, Katarzyna; Dumon, Pieter; Li, Yanlu; Verheyen, Peter; Absil, Philippe; Alloatti, Luca; Hillerkuss, David; Leuthold, Juerg; Baets, Roel; Bogaerts, Wim

    2012-06-04

    Carrier-depletion based silicon modulators with lateral and interdigitated PN junctions are compared systematically on the same fabrication platform. The interdigitated diode is shown to outperform the lateral diode in achieving a low VπLπ of 0.62 V∙cm with comparable propagation loss at the expense of a higher depletion capacitance. The low VπLπ of the interdigitated PN junction is employed to demonstrate 10 Gbit/s modulation with 7.5 dB extinction ration from a 500 µm long device whose static insertion loss is 2.8 dB. In addition, up to 40 Gbit/s modulation is demonstrated for a 3 mm long device comprising a lateral diode and a co-designed traveling wave electrode.

  11. OPENING ADDRESS: Heterostructures in Semiconductors

    NASA Astrophysics Data System (ADS)

    Grimmeiss, Hermann G.

    1996-01-01

    Good morning, Gentlemen! On behalf of the Nobel Foundation, I should like to welcome you to the Nobel Symposium on "Heterostructures in Semiconductors". It gives me great pleasure to see so many colleagues and old friends from all over the world in the audience and, in particular, to bid welcome to our Nobel laureates, Prof. Esaki and Prof. von Klitzing. In front of a different audience I would now commend the scientific and technological importance of heterostructures in semiconductors and emphatically emphasise that heterostructures, as an important contribution to microelectronics and, hence, information technology, have changed societies all over the world. I would also mention that information technology is one of the most important global key industries which covers a wide field of important areas each of which bears its own character. Ever since the invention of the transistor, we have witnessed a fantastic growth in semiconductor technology, leading to more complex functions and higher densities of devices. This development would hardly be possible without an increasing understanding of semiconductor materials and new concepts in material growth techniques which allow the fabrication of previously unknown semiconductor structures. But here and today I will not do it because it would mean to carry coals to Newcastle. I will therefore not remind you that heterostructures were already suggested and discussed in detail a long time before proper technologies were available for the fabrication of such structures. Now, heterostructures are a foundation in science and part of our everyday life. Though this is certainly true, it is nevertheless fair to say that not all properties of heterostructures are yet understood and that further technologies have to be developed before a still better understanding is obtained. The organisers therefore hope that this symposium will contribute not only to improving our understanding of heterostructures but also to opening new

  12. Enhanced thermoelectric properties in bulk nanowire heterostructure-based nanocomposites through minority carrier blocking.

    PubMed

    Yang, Haoran; Bahk, Je-Hyeong; Day, Tristan; Mohammed, Amr M S; Snyder, G Jeffrey; Shakouri, Ali; Wu, Yue

    2015-02-11

    To design superior thermoelectric materials the minority carrier blocking effect in which the unwanted bipolar transport is prevented by the interfacial energy barriers in the heterogeneous nanostructures has been theoretically proposed recently. The theory predicts an enhanced power factor and a reduced bipolar thermal conductivity for materials with a relatively low doping level, which could lead to an improvement in the thermoelectric figure of merit (ZT). Here we show the first experimental demonstration of the minority carrier blocking in lead telluride-silver telluride (PbTe-Ag2Te) nanowire heterostructure-based nanocomposites. The nanocomposites are made by sintering PbTe-Ag2Te nanowire heterostructures produced in a highly scalable solution-phase synthesis. Compared with Ag2Te nanowire-based nanocomposite produced in similar method, the PbTe-Ag2Te nanocomposite containing ∼5 atomic % PbTe exhibits enhanced Seebeck coefficient, reduced thermal conductivity, and ∼40% improved ZT, which can be well explained by the theoretical modeling based on the Boltzmann transport equations when energy barriers for both electrons and holes at the heterostructure interfaces are considered in the calculations. For this p-type PbTe-Ag2Te nanocomposite, the barriers for electrons, that is, minority carriers, are primarily responsible for the ZT enhancement. By extending this approach to other nanostructured systems, it represents a key step toward low-cost solution-processable nanomaterials without heavy doping level for high-performance thermoelectric energy harvesting.

  13. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    SciTech Connect

    Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Puretzky, Alexander A.; Geohegan, David B.; Kim, Ki Wook; Zhang, Yong; Cao, Linyou

    2014-12-03

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of the two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.

  14. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    DOE PAGES

    Yu, Yifei; Hu, Shi; Su, Liqin; ...

    2014-12-03

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of themore » two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.« less

  15. Tuning the Schottky barrier in the arsenene/graphene van der Waals heterostructures by electric field

    NASA Astrophysics Data System (ADS)

    Li, Wei; Wang, Tian-Xing; Dai, Xian-Qi; Wang, Xiao-Long; Ma, Ya-Qiang; Chang, Shan-Shan; Tang, Ya-Nan

    2017-04-01

    Using density functional theory calculations, we investigate the electronic properties of arsenene/graphene van der Waals (vdW) heterostructures by applying external electric field perpendicular to the layers. It is demonstrated that weak vdW interactions dominate between arsenene and graphene with their intrinsic electronic properties preserved. We find that an n-type Schottky contact is formed at the arsenene/graphene interface with a Schottky barrier of 0.54 eV. Moreover, the vertical electric field can not only control the Schottky barrier height but also the Schottky contacts (n-type and p-type) and Ohmic contacts (n-type) at the interface. Tunable p-type doping in graphene is achieved under the negative electric field because electrons can transfer from the Dirac point of graphene to the conduction band of arsenene. The present study would open a new avenue for application of ultrathin arsenene/graphene heterostructures in future nano- and optoelectronics.

  16. Current induced decomposition of Abrikosov vortices in p-n layered superconductors and heterostructures.

    PubMed

    Rakhmanov, A L; Savel'ev, Sergey; Kusmartsev, F V

    2008-11-07

    We describe the decomposition of Abrikosov vortices into decoupled pancake vortices in superconductors having both electron and hole charge carriers. We estimate the critical current of such a decomposition, at which a superconducting-normal state transition occurs, and find that it is very sensitive to the magnetic field and temperature. The effect can be observed in recently synthesized self-doped high-Tc layered superconductors with electrons and holes coexisting in different Cu-O planes and in artificial p-n superconductor heterostructures. The sensitivity of the critical current to a magnetic field may be used for sensors and detectors of a magnetic field, which can be built up from the superconductor heterostructures.

  17. Current Induced Decomposition of Abrikosov Vortices in p-n Layered Superconductors and Heterostructures

    NASA Astrophysics Data System (ADS)

    Rakhmanov, A. L.; Savel'Ev, Sergey; Kusmartsev, F. V.

    2008-11-01

    We describe the decomposition of Abrikosov vortices into decoupled pancake vortices in superconductors having both electron and hole charge carriers. We estimate the critical current of such a decomposition, at which a superconducting-normal state transition occurs, and find that it is very sensitive to the magnetic field and temperature. The effect can be observed in recently synthesized self-doped high-Tc layered superconductors with electrons and holes coexisting in different Cu-O planes and in artificial p-n superconductor heterostructures. The sensitivity of the critical current to a magnetic field may be used for sensors and detectors of a magnetic field, which can be built up from the superconductor heterostructures.

  18. Structural and electronic properties of two-dimensional stanene and graphene heterostructure.

    PubMed

    Wu, Liyuan; Lu, Pengfei; Bi, Jingyun; Yang, Chuanghua; Song, Yuxin; Guan, Pengfei; Wang, Shumin

    2016-12-01

    Structural and electronic properties of two-dimensional stanene and graphene heterostructure (Sn/G) are studied by using first-principles calculations. Various supercell models are constructed in order to reduce the strain induced by the lattice mismatch. The results show that stanene interacts overall weakly with graphene via van der Waals (vdW) interactions. Multiple phases of different crystalline orientation of stanene and graphene could coexist at room temperature. Moreover, interlayer interactions in stanene and graphene heterostructure can induce tunable band gaps at stanene's Dirac point, and weak p-type and n-type doping of stanene and graphene, respectively, generating a small amount of electron transfer from stanene to graphene. Interestingly, for model [Formula: see text] , there emerges a band gap about 34 meV overall the band structure, indicating it shows semiconductor feature.

  19. EDITORIAL: Focus on Advanced Semiconductor Heterostructures for Optoelectronics

    NASA Astrophysics Data System (ADS)

    Amann, Markus C.; Capasso, Federico; Larsson, Anders; Pessa, Markus

    2009-12-01

    Semiconductor heterostructures are the basic materials underlying optoelectronic devices, particularly lasers and light-emitting diodes (LEDs). Made from various III-V-, II-VI-, SiGe- and other compound semiconductors, modern semiconductor devices are available for the generation, detection and modulation of light covering the entire ultra-violet to far-infrared spectral region. Recent approaches that introduced multilayer heterostructures tailored on the lower nanometre scale made possible artificial semiconductors with new properties, such as extended wavelength coverage, that enabled new applications. Together with ongoing progress on wide-gap semiconductors, the optical wavelengths accessible by semiconductor devices are steadily expanding towards the short-wavelength ultra-violet regime, as well as further into the far-infrared and terahertz spectral regions. It is the aim of this focus issue to present cutting-edge research topics on the most recent optoelectronic material and device developments in this field using advanced semiconductor heterostructures. Focus on Advanced Semiconductor Heterostructures for Optoelectronics Contents Theoretical and experimental investigations of the limits to the maximum output power of laser diodes H Wenzel, P Crump, A Pietrzak, X Wang, G Erbert and G Tränkle GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, F Guillot, G Pozzovivo, M Tchernycheva, A Lupu, L Vivien, P Crozat, E Warde, C Bougerol, S Schacham, G Strasser, G Bahir, E Monroy and F H Julien Bound-to-continuum terahertz quantum cascade laser with a single-quantum-well phonon extraction/injection stage Maria I Amanti, Giacomo Scalari, Romain Terazzi, Milan Fischer, Mattias Beck, Jérôme Faist, Alok Rudra, Pascal Gallo and Eli Kapon Structural and optical characteristics of GaN/ZnO coaxial nanotube heterostructure arrays for light-emitting device applications Young Joon Hong, Jong-Myeong Jeon, Miyoung

  20. Substrate co-doping modulates electronic metal-support interactions and significantly enhances single-atom catalysis.

    PubMed

    Shi, J L; Wu, J H; Zhao, X J; Xue, X L; Gao, Y F; Guo, Z X; Li, S F

    2016-11-24

    Transitional metal nanoparticles or atoms deposited on appropriate substrates can lead to highly economical, efficient, and selective catalysis. One of the greatest challenges is to control the electronic metal-support interactions (EMSI) between the supported metal atoms and the substrate so as to optimize their catalytic performance. Here, from first-principles calculations, we show that an otherwise inactive Pd single adatom on TiO2(110) can be tuned into a highly effective catalyst, e.g. for O2 adsorption and CO oxidation, by purposefully selected metal-nonmetal co-dopant pairs in the substrate. Such an effect is proved here to result unambiguously from a significantly enhanced EMSI. A nearly linear correlation is noted between the strength of the EMSI and the activation of the adsorbed O2 molecule, as well as the energy barrier for CO oxidation. Particularly, the enhanced EMSI shifts the frontier orbital of the deposited Pd atom upward and largely enhances the hybridization and charge transfer between the O2 molecule and the Pd atom. Upon co-doping, the activation barrier for CO oxidation on the Pd monomer is also reduced to a level comparable to that on the Pd dimer which was experimentally reported to be highly efficient for CO oxidation. The present findings provide new insights into the understanding of the EMSI in heterogeneous catalysis and can open new avenues to design and fabricate cost-effective single-atom-sized and/or nanometer-sized catalysts.

  1. The effects of the magnitude of the modulation field on electroreflectance spectroscopy of undoped-n+ type doped GaAs

    NASA Astrophysics Data System (ADS)

    Wang, D. P.; Huang, K. M.; Shen, T. L.; Huang, K. F.; Huang, T. C.

    1998-01-01

    The electroreflectance (ER) spectra of an undoped-n+ type doped GaAs has been measured at various amplitudes of modulating fields (δF). Many Franz-Keldysh oscillations were observed above the band gap energy, thus enabling the electric field (F) in the undoped layer to be determined. The F is obtained by applying fast Fourier transformation to the ER spectra. When δF is small, the power spectrum can be clearly resolved into two peaks, which corresponds to heavy- and light-hole transitions. When δF is less than ˜1/8 of the built-in field (Fbi˜77 420 V/cm), the F deduced from the ER is almost independent of δF. However, when larger than this, F is increased with δF. Also, when δF is increased to larger than ˜1/8 of Fbi, a shoulder appears on the right side of the heavy-hole peak of the power spectrum. The separation between the main peak and the shoulder of the heavy-hole peak becomes wider as δF becomes larger.

  2. Aptameric Recognition-Modulated Electroactivity of Poly(4-Styrenesolfonic Acid)-Doped Polyaniline Films for Single-Shot Detection of Tetrodotoxin

    PubMed Central

    Fomo, Gertrude; Waryo, Tesfaye T.; Sunday, Christopher E.; Baleg, Abd A.; Baker, Priscilla G.; Iwuoha, Emmanuel I.

    2015-01-01

    The work being reported is the first electrochemical sensor for tetrodotoxin (TTX). It was developed on a glassy carbon electrodes (C) that was modified with poly(4-styrenesolfonic acid)-doped polyaniline film (PANI/PSSA). An amine-end functionalized TTX-binding aptamer, 5′-NH2-AAAAATTTCACACGGGTGCCTCGGCTGTCC-3′ (NH2-Apt), was grafted via covalent glutaraldehyde (glu) cross-linking. The resulting aptasensor (C//PANI+/PSSA-glu-NH2-Apt) was interrogated by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) in sodium acetate buffer (NaOAc, pH 4.8) before and after 30 min incubation in standard TTX solutions. Both CV and EIS results confirmed that the binding of the analyte to the immobilized aptamer modulated the electrochemical properties of the sensor: particularly the charge transfer resistance (Rct) of the PANI+/PSSA film, which served as a signal reporter. Based on the Rct calibration curve of the TTX aptasensor, the values of the dynamic linear range (DLR), sensitivity and limit of detection (LOD) of the sensor were determined to be 0.23–1.07 ng·mL−1 TTX, 134.88 ± 11.42 Ω·ng·mL−1 and 0.199 ng·mL−1, respectively. Further studies are being planned to improve the DLR as well as to evaluate selectivity and matrix effects in real samples. PMID:26370994

  3. Electronic Transport in Graphene Heterostructures

    NASA Astrophysics Data System (ADS)

    Young, Andrea F.; Kim, Philip

    2011-03-01

    The elementary excitations of monolayer graphene, which behave as massless Dirac particles, make it a fascinating venue in which to study relativistic quantum phenomena. One notable example is Klein tunneling, a phenomena in which electrons convert to holes to tunnel through a potential barrier. However, the omnipresence of charged impurities in substrate-supported samples keep the overall charge distribution nonuniform, obscuring much of this "Dirac" point physics in large samples. Using local gates, one can create tunable heterojunctions in graphene, isolating the contribution of small regions of the samples to transport. In this review, we give an overview of quantum transport theory and experiment on locally gated graphene heterostructures, with an emphasis on bipolar junctions.

  4. High Speed Heterostructure Metal-Semiconductor-Metal Photodetectors

    NASA Astrophysics Data System (ADS)

    Cola, A.; Nabet, B.; Chen, X.; Quaranta, F.

    2005-01-01

    In this work we review the properties of a class of metal-semiconductor-metal photodetectors based on heterojunction structures. Particularly, an AlGaAs/GaAs device is detailed in which the absorption region is in the GaAs layer, and a two-dimensional electron gas is formed at the heterointerface due toδ-doping of the widegap material. This heterostructure metal-semiconductor-metal photodetector also contains an AlGaAs distributed Bragg reflector that forms a resonant cavity for detection at 850 nm. The beneficial effect of the two-dimensional electron gas in the GaAs absorption layer in terms of speed and sensitivity is demonstrated by comparing samples with and without doping in the AlGaAs layer. The design and the physical properties of the grown epitaxial structure are presented, together with the static and dynamic characteristics of the device in time domain. In particular, photocurrent spectra exhibit a 30 nm wide peak at 850 nm, and time response measurements give a bandwidth over 30 GHz. A combination of very low dark current and capacitance, fast response, wavelength selectivity, and compatibility with high electron mobility transistors makes this device suitable for a number of application areas, such as Gigabit and 10 Gigabit Ethernet, wavelength division multiplexing, remote sensing, and medical applications.

  5. Heterostructures for Increased Quantum Efficiency in Nitride LEDs

    SciTech Connect

    Davis, Robert F.

    2010-09-30

    Task 1. Development of an advanced LED simulator useful for the design of efficient nitride-based devices. Simulator will contain graphical interface software that can be used to specify the device structure, the material parameters, the operating conditions and the desired output results. Task 2. Theoretical and experimental investigations regarding the influence on the microstructure, defect concentration, mechanical stress and strain and IQE of controlled changes in the chemistry and process route of deposition of the buffer layer underlying the active region of nitride-based blue- and greenemitting LEDs. Task 3. Theoretical and experimental investigations regarding the influence on the physical properties including polarization and IQE of controlled changes in the geometry, chemistry, defect density, and microstructure of components in the active region of nitride-based blue- and green-emitting LEDs. Task 4. Theoretical and experimental investigations regarding the influence on IQE of novel heterostructure designs to funnel carriers into the active region for enhanced recombination efficiency and elimination of diffusion beyond this region. Task 5. Theoretical and experimental investigations regarding the influence of enhanced p-type doping on the chemical, electrical, and microstructural characteristics of the acceptor-doped layers, the hole injection levels at Ohmic contacts, the specific contact resistivity and the IQE of nitride-based blue- and green-emitting LEDs. Development and optical and electrical characterization of reflective Ohmic contacts to n- and p-type GaN films.

  6. Improvements in MOCVD growth of Hg1-xCdxTe heterostructures for uncooled infrared photodetectors

    NASA Astrophysics Data System (ADS)

    Piotrowski, A.; Gawron, W.; Klos, K.; Pawluczyk, J.; Piotrowski, J.; Madejczyk, P.; Rogalski, A.

    2005-09-01

    We report here the recent progress at VIGO/MUT (Military University of Technology) MOCVD Laboratory in the growth of Hg1-xCdxTe multilayer heterostructures for various types of uncooled infrared devices. The detectors are optimized for any wavelength within 1-12 μm spectral range. Hg1-xCdxTe growth with interdiffused multilayer process (IMP) technique has been improved. The total flow of the carrier gas was optimized to improve lateral uniformity of the composition and doping. The parasitic transient stages between the CdTe and HgTe phases were reduced to reasonable minimum. As a result, we were able to grow layers with homogeneous composition and doping, characterized by steep interfaces. The additional benefits were improved morphology, reduced dislocation density, and minimized consumption of precursors. The other issues addressed in this work were growth of heavy As-doped low-x and heavy Idoped high-x materials. Special modification to IMP process has been applied for in-situ control of stoichiometry. To maintain low vacancy concentration, special growth finish procedure has been developed. No post-growth thermal anneal was necessary for device-quality material. The MOCVD grown heterostructures have been successfully used for advanced uncooled infrared photodetectors such as multiple heterojunction photodiodes, multicolor and specially shaped spectral response multiabsorber devices.

  7. Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures.

    PubMed

    Pierucci, Debora; Henck, Hugo; Avila, Jose; Balan, Adrian; Naylor, Carl H; Patriarche, Gilles; Dappe, Yannick J; Silly, Mathieu G; Sirotti, Fausto; Johnson, A T Charlie; Asensio, Maria C; Ouerghi, Abdelkarim

    2016-07-13

    Two-dimensional layered MoS2 shows great potential for nanoelectronic and optoelectronic devices due to its high photosensitivity, which is the result of its indirect to direct band gap transition when the bulk dimension is reduced to a single monolayer. Here, we present an exhaustive study of the band alignment and relativistic properties of a van der Waals heterostructure formed between single layers of MoS2 and graphene. A sharp, high-quality MoS2-graphene interface was obtained and characterized by micro-Raman spectroscopy, high-resolution X-ray photoemission spectroscopy (HRXPS), and scanning high-resolution transmission electron microscopy (STEM/HRTEM). Moreover, direct band structure determination of the MoS2/graphene van der Waals heterostructure monolayer was carried out using angle-resolved photoemission spectroscopy (ARPES), shedding light on essential features such as doping, Fermi velocity, hybridization, and band-offset of the low energy electronic dynamics found at the interface. We show that, close to the Fermi level, graphene exhibits a robust, almost perfect, gapless, and n-doped Dirac cone and no significant charge transfer doping is detected from MoS2 to graphene. However, modification of the graphene band structure occurs at rather larger binding energies, as the opening of several miniband-gaps is observed. These miniband-gaps resulting from the overlay of MoS2 and the graphene layer lattice impose a superperiodic potential.

  8. Mass spectrometric characterization of urinary metabolites of the selective androgen receptor modulator S-22 to identify potential targets for routine doping controls.

    PubMed

    Thevis, Mario; Thomas, Andreas; Möller, Ines; Geyer, Hans; Dalton, James T; Schänzer, Wilhelm

    2011-08-15

    Drugs that promote anabolic processes with limited undesirable effects are of considerable therapeutic interest; some notable examples include those for the treatment of cancer cachexia and muscle-wasting diseases. Anabolic properties are not only therapeutically beneficial to critically ill and debilitated patients, but are also desirable to athletes seeking artificial enhancements in endurance, strength and accelerated recovery. The use of anabolic agents in the clinical setting is being reconsidered with the emergence of a new class of drugs referred to as SARMs (selective androgen receptor modulators). SARMs have the potential to complement or even replace anabolic androgenic steroidal use with the benefit of a reduction of the undesirable side effects associated with steroid administration alone. Arylpropionamide-based SARMs such as andarine (S-4) and S-22 have shown promising therapeutic properties and have attracted the interest of elite and amateur athletes despite the absence of clinical approval, and evidence for trafficking and misuse in sport has been obtained by doping control authorities. In this communication, the elucidation of urinary metabolites of the SARM drug candidate S-22 is compared with earlier in vitro metabolism studies. Following oral administration of illicit S-22, urine samples were collected after 62 and 135 h and analyzed for the active drug and its major metabolic products. Liquid chromatography interfaced with high-resolution/high-accuracy (tandem) mass spectrometry was used to identify and/or confirm the predicted target analytes for sports drug testing purposes. S-22 was detected in both specimens accompanied by its glucuronic acid conjugate. This was the B-ring hydroxylated derivative of S-22 plus the corresponding glucuronide (with the phase-II metabolites being the more abundant analytes). In addition, the samples collected 62 h post-administration also contained the phase-I metabolite hydroxylated at the methyl residue (C-20

  9. Experimental demonstration of efficient pulsed terahertz emission from a stacked GaAs/AlGaAs p-i-n-i heterostructure

    NASA Astrophysics Data System (ADS)

    Lisauskas, A.; Reklaitis, A.; Venckevičius, R.; Kašalynas, I.; Valušis, G.; Grigaliunaitė-Vonsevičienė, G.; Maestre, H.; Schmidt, J.; Blank, V.; Thomson, M. D.; Roskos, H. G.; Köhler, K.

    2011-02-01

    The pulsed optoelectronic terahertz emitter based on a δ-doped p-i-n-i GaAs/AlxGa1-xAs heterostructure, which was suggested by Reklaitis [Phys. Rev. B 77, 153309 (2008)], is investigated experimentally. It is shown that the heterostructure can serve as efficient antenna- and bias-free surface emitter. Its power exceeds the emission from InGaAs and InAs surfaces for optical excitation fluences below 0.7 μJ/cm2 at 82 MHz pulse repetition rate, respectively, 7 μJ/cm2 at 1 kHz, with potential for further improvement by carrier recombination management.

  10. Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures

    SciTech Connect

    Zhukavin, R. Kh. Kovalevsky, K. A.; Orlov, M. L.; Tsyplenkov, V. V.; Bekin, N. A.; Yablonskiy, A. N.; Yunin, P. A.; Pavlov, S. G.; Abrosimov, N. V.; Hübers, H.-W.; Radamson, H. H.; Shastin, V. N.

    2015-01-15

    The results of measurements of the total terahertz-range photoluminescence of Group-V donors (phosphorus, antimony, bismuth, arsenic) in bulk silicon and SiGe/Si heterostructures depending on the excitation intensity are presented. The signal of bulk silicon was also measured as a function of uniaxial stress. The results of measurement of the dependence of the spontaneous emission intensity on the uniaxial stress is in rather good agreement with theoretical calculations of the relaxation times of excited states of donors in bulk silicon. Comparative measurements of the spontaneous emission from various strained heterostructures showed that the photoluminescence signal is caused by donor-doped silicon regions.

  11. Device Concepts Based on Spin-dependent Transmission in Semiconductor Heterostructures

    NASA Technical Reports Server (NTRS)

    Ting, David Z. - Y.; Cartoixa, X.

    2004-01-01

    We examine zero-magnetic-field spin-dependent transmission in nonmagnetic semiconductor heterostructures with structural inversion asymmetry (SIA) and bulk inversion asymmetry (BIA), and report spin devices concepts that exploit their properties. Our modeling results show that several design strategies could be used to achieve high spin filtering efficiencies. The current spin polarization of these devices is electrically controllable, and potentially amenable to highspeed spin modulation, and could be integrated in optoelectronic devices for added functionality.

  12. Plasmonic ambient light sensing with MoS2-graphene heterostructures

    NASA Astrophysics Data System (ADS)

    Radoi, Antonio; Dragoman, Mircea; Dragoman, Daniela

    2017-01-01

    We present experimental results on plasmonic photodetection of ambient light using MoS2-graphene heterostructures illuminated with three very-low-power light emitting diodes (LEDs) radiating in blue, green, and red, respectively. The working principle of this photodetector validates the recent predictions of hot-carrier plasmonic doping of MoS2. The obtained responsivity for each spectral domain is in agreement with photopic standards of the luminosity function. The response time of the detector is less than the eye blinking time.

  13. Controllable Schottky barrier in GaSe/graphene heterostructure: the role of interface dipole

    NASA Astrophysics Data System (ADS)

    Si, Chen; Lin, Zuzhang; Zhou, Jian; Sun, Zhimei

    2017-03-01

    The discoveries of graphene and other related two-dimensional crystals have recently led to a new technology: van der Waals (vdW) heterostructures based on these atomically thin materials. Such a paradigm has been proved promising for a wide range of applications from nanoelectronics to optoelectronics and spintronics. Here, using first-principles calculations, we investigate the electronic structure and interface characteristics of a newly synthesized GaSe/graphene (GaSe/g) vdW heterostructure. We show that the intrinsic electronic properties of GaSe and graphene are both well preserved in the heterostructure, with a Schottky barrier formed at the GaSe/g interface. More interestingly, the band alignment between graphene and GaSe can be effectively modulated by tuning the interfacial distance or applying an external electric filed. This makes the Schottky barrier height (SBH) controllable, which is highly desirable in the electronic and optoelectronic devices based on vdW heterostructures. In particular, the tunability of the interface dipole and potential step is further uncovered to be the underlying mechanism that ensures this controllable tuning of SBH.

  14. Graphene oxide/graphene vertical heterostructure electrodes for highly efficient and flexible organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Jia, S.; Sun, H. D.; Du, J. H.; Zhang, Z. K.; Zhang, D. D.; Ma, L. P.; Chen, J. S.; Ma, D. G.; Cheng, H. M.; Ren, W. C.

    2016-05-01

    , and good compatibility with HIL materials (MoO3 in this work). Moreover, the conductivity of the heterostructure is not sacrificed compared to the pristine three-layer graphene electrodes, but is significantly higher than that of pristine two-layer graphene films. In addition to high flexibility, OLEDs with different emission colors based on the GO/G heterostructure TCEs show much better performance than those based on indium tin oxide (ITO) anodes. Green OLEDs with GO/G heterostructure electrodes have the maximum current efficiency and power efficiency, as high as 82.0 cd A-1 and 98.2 lm W-1, respectively, which are 36.7% (14.8%) and 59.2% (15.0%) higher than those with pristine graphene (ITO) anodes. These findings open up the possibility of using graphene for next generation high-performance flexible and wearable optoelectronics with high stability. Electronic supplementary information (ESI) available: XPS spectra, Raman spectra, sheet resistance and transmittance of graphene films with different numbers of layers and different ozone treatment times, doping effect of MoO3 on graphene and GO/G electrodes, performance of green OLEDs with different graphene anodes, a movie showing the flexibility of device. See DOI: 10.1039/c6nr01649a

  15. Magnetoelectric Coupling in Composite Multiferroic Heterostructures

    NASA Astrophysics Data System (ADS)

    Hoffman, Jason

    In this work, we demonstrate a large charge-mediated magnetoelectric coupling in a PbZr0.2Ti0.8O3 / La0.8 Sr0.2MnO3 (PZT/LSMO) composite structure resulting from direct control of magnetism via charge carrier density. This approach has the advantage that its physical mechanism is transparent and the size of the effect can be quantified and understood qualitatively within the double-exchange model. Direct quantification of the charge-driven magnetic changes based on electronic, magnetic, and spectroscopic measurements show that both the spin state and spin configuration of LSMO are modulated. Using a combination of advanced physical vapor deposition techniques, we have grown epitaxial PZT/LSMO bilayer heterostructures on (001) SrTiO 3 substrates with excellent crystallinity, atomically smooth surfaces, low leakage current density, and abrupt interfaces. Magneto-optic Kerr effect (MOKE) magnetometry was used to directly interrogate the local magnetic state of the LSMO as a function of the PZT polarization state. We show direct control of magnetism via applied electric fields, including modulation of the magnetotransport behavior and magnetic-ordering temperature, on/off switching of magnetism, and hysteretic magnetization versus electric field (M-E) characteristics. The magnetoelectric coupling strength, which relates the change in magnetization to the applied electric field, is found to vary strongly with temperature, reaching a low temperature saturation value of +6 Oe cm / kV, much larger than observed in single-phase magnetoelectrics and too large to be explained by a simple band-filling model. To clarify the origin of the magnetoelectric coupling, we carried out near edge x-ray absorption measurements that revealed a well defined change in the position of the Mn absorption edge with the ferroelectric polarization, giving a direct measure of the change in Mn valency in LSMO. We explain these results in terms of an interfacial magnetic reconstruction, whereby the

  16. From gene engineering to gene modulation and manipulation: can we prevent or detect gene doping in sports?

    PubMed

    Fischetto, Giuseppe; Bermon, Stéphane

    2013-10-01

    During the last 2 decades, progress in deciphering the human gene map as well as the discovery of specific defective genes encoding particular proteins in some serious human diseases have resulted in attempts to treat sick patients with gene therapy. There has been considerable focus on human recombinant proteins which were gene-engineered and produced in vitro (insulin, growth hormone, insulin-like growth factor-1, erythropoietin). Unfortunately, these substances and methods also became improper tools for unscrupulous athletes. Biomedical research has focused on the possible direct insertion of gene material into the body, in order to replace some defective genes in vivo and/or to promote long-lasting endogenous synthesis of deficient proteins. Theoretically, diabetes, anaemia, muscular dystrophies, immune deficiency, cardiovascular diseases and numerous other illnesses could benefit from such innovative biomedical research, though much work remains to be done. Considering recent findings linking specific genotypes and physical performance, it is tempting to submit the young athletic population to genetic screening or, alternatively, to artificial gene expression modulation. Much research is already being conducted in order to achieve a safe transfer of genetic material to humans. This is of critical importance since uncontrolled production of the specifically coded protein, with serious secondary adverse effects (polycythaemia, acute cardiovascular problems, cancer, etc.), could occur. Other unpredictable reactions (immunogenicity of vectors or DNA-vector complex, autoimmune anaemia, production of wild genetic material) also remain possible at the individual level. Some new substances (myostatin blockers or anti-myostatin antibodies), although not gene material, might represent a useful and well-tolerated treatment to prevent progression of muscular dystrophies. Similarly, other molecules, in the roles of gene or metabolic activators [5-aminoimidazole-4

  17. Multilayer heterostructures and their manufacture

    DOEpatents

    Hammond, Scott R; Reese, Matthew; Rupert, Benjamin; Miedaner, Alexander; Curtis, Clavin; Olson, Dana; Ginley, David S

    2015-11-04

    A method of synthesizing multilayer heterostructures including an inorganic oxide layer residing on a solid substrate is described. Exemplary embodiments include producing an inorganic oxide layer on a solid substrate by a liquid coating process under relatively mild conditions. The relatively mild conditions include temperatures below 225.degree. C. and pressures above 9.4 mb. In an exemplary embodiment, a solution of diethyl aluminum ethoxide in anhydrous diglyme is applied to a flexible solid substrate by slot-die coating at ambient atmospheric pressure, and the diglyme removed by evaporation. An AlO.sub.x layer is formed by subjecting material remaining on the solid substrate to a relatively mild oven temperature of approximately 150.degree. C. The resulting AlO.sub.x layer exhibits relatively high light transmittance and relatively low vapor transmission rates for water. An exemplary embodiment of a flexible solid substrate is polyethylene napthalate (PEN). The PEN is not substantially adversely affected by exposure to 150.degree. C

  18. Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure

    PubMed Central

    Sediri, Haikel; Pierucci, Debora; Hajlaoui, Mahdi; Henck, Hugo; Patriarche, Gilles; Dappe, Yannick J.; Yuan, Sheng; Toury, Bérangère; Belkhou, Rachid; Silly, Mathieu G.; Sirotti, Fausto; Boutchich, Mohamed; Ouerghi, Abdelkarim

    2015-01-01

    Stacking various two-dimensional atomic crystals is a feasible approach to creating unique multilayered van der Waals heterostructures with tailored properties. Herein for the first time, we present a controlled preparation of large-area h-BN/graphene heterostructures via a simple chemical deposition of h-BN layers on epitaxial graphene/SiC(0001). Van der Waals forces, which are responsible for the cohesion of the multilayer system, give rise to an abrupt interface without interdiffusion between graphene and h-BN, as shown by X-ray Photoemission Spectroscopy (XPS) and direct observation using scanning and High-Resolution Transmission Electron Microscopy (STEM/HRTEM). The electronic properties of graphene, such as the Dirac cone, remain intact and no significant charge transfer i.e. doping, is observed. These results are supported by Density Functional Theory (DFT) calculations. We demonstrate that the h-BN capped graphene allows the fabrication of vdW heterostructures without altering the electronic properties of graphene. PMID:26585245

  19. EUO-Based Multifunctional Heterostructures

    DTIC Science & Technology

    2015-06-06

    understanding the changes in electronic structure and Fermi-surface reconstruction that occur as doped EuO progresses through the ferromagnetic metal ...strong momentum-dependent evolution of the electronic structure , where the metallic states at the zone boundary are replaced by pseudogapped states at...K.M. Shen, “Temperature Dependence of the Electronic Structure and Fermi-Surface Reconstruction of Eu1−xGdxO through the Ferromagnetic Metal

  20. Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures

    SciTech Connect

    Yin, Yao; Sun, Huabin; Chen, Peng; Sang, Liwen; Dierre, Benjamin; Sumiya, Masatomo; Sekiguchi, Takashi; Zheng, Youdou; Shi, Yi

    2015-05-15

    The spatial distribution of indium composition in InGaN/GaN heterostructure is a critical topic for modulating the wavelength of light emitting diodes. In this letter, semi-polar InGaN/GaN heterostructure stripes were fabricated on patterned GaN/Sapphire substrates by epitaxial lateral overgrowth (ELO), and the spatial distribution of indium composition in the InGaN layer was characterized by using cathodoluminescence. It is found that the indium composition is mainly controlled by the diffusion behaviors of metal atoms (In and Ga) on the surface. The diffusivity of metal atoms decreases sharply as migrating to the region with a high density of dislocations and other defects, which influences the distribution of indium composition evidently. Our work is beneficial for the understanding of ELO process and the further development of InGaN/GaN heterostructure based devices.

  1. Atomic thin titania nanosheet-coupled reduced graphene oxide 2D heterostructures for enhanced photocatalytic activity and fast lithium storage

    NASA Astrophysics Data System (ADS)

    Li, Dong Jun; Huang, Zhegang; Hwang, Tae Hoon; Narayan, Rekha; Choi, Jang Wook; Kim, Sang Ouk

    2016-03-01

    Realizing practical high performance materials and devices using the properties of 2D materials is of key research interest in the materials science field. In particular, building well-defined heterostructures using more than two different 2D components in a rational way is highly desirable. In this paper, a 2D heterostructure consisting of atomic thin titania nanosheets densely grown on reduced graphene oxide surface is successfully prepared through incorporating polymer functionalized graphene oxide into the novel TiO2 nanosheets synthesis scheme. As a result of the synergistic combination of a highly accessible surface area and abundant interface, which can modulate the physicochemical properties, the resultant heterostructure can be used in high efficiency visible light photocatalysis as well as fast energy storage with a long lifecycle. [Figure not available: see fulltext.

  2. Wafer bonded epitaxial templates for silicon heterostructures

    NASA Technical Reports Server (NTRS)

    Atwater, Harry A., Jr. (Inventor); Zahler, James M. (Inventor); Morral, Anna Fontcubera I (Inventor)

    2008-01-01

    A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

  3. Wafer bonded epitaxial templates for silicon heterostructures

    DOEpatents

    Atwater, Jr., Harry A.; Zahler, James M.; Morral, Anna Fontcubera I

    2008-03-11

    A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

  4. A novel ultra steep dynamically reconfigurable electrostatically doped silicon nanowire Schottky Barrier FET

    NASA Astrophysics Data System (ADS)

    Singh, Sangeeta; Sinha, Ruchir; Kondekar, P. N.

    2016-05-01

    In this paper, an ultra steep, symmetric and dynamically configurable, electrostatically doped silicon nanowire Schottky FET (E-SiNW-SB-FET) based on dopant-free technology is investigated. It achieves the ultra steep sub-threshold slope (SS) due to the cumulative effect of weak impact-ionization induced positive feedback and electrostatic modulation of Schottky barrier heights at both source and drain terminals. It consists of axial nanowire heterostructure (silicide-intrinsic silicon-silicide) with three independent all-around gates, two gates are polarity control gates for dynamically reconfiguring the device polarity by modulating the effective Schottky barrier heights and a control gate switches the device ON and OFF. The most interesting features of the proposed structure are simplified fabrication process as the state-of-the-art for ion implantation and high thermal budget no more required for annealing. It is highly immune to process variations, doping control issues and random dopant fluctuations (RDF) and there are no mobility degradation issues related to high doping. A calibrated 3-D TCAD simulation results exhibit the SS of 2 mV/dec for n-type E-SiNW-SB-FET and 9 mV/dec for p-type E-SiNW-SB-FET for about five decades of current. Further, it resolves all the reliability related issues of IMOS as hot electron effects are no more limiting our device performance. It offers significant drive current of the order of 10-5-10-4 A and magnificently high ION/IOFF ratio of ∼108 along with the inherent advantages of symmetric device structure for its circuit realization.

  5. Layer Resolved Imaging of Magnetic Domain Motion in Epitaxial Heterostructures

    NASA Astrophysics Data System (ADS)

    Zohar, Sioan; Choi, Yongseong; Love, David; Mansell, Rhodri; Barnes, Crispin; Keavney, David; Rosenberg, Richard

    We use X-ray Excited Luminescence Microscopy (XELM) to image the elemental and layer resolved magnetic domain structure of an epitaxial Fe/Cr wedge/Co heterostructure in the presence of large magnetic fields. The observed magnetic domains exhibit several unique behaviors that depend on the Cr thickness (tCr) modulated interlayer exchange coupling (IEC) strength. For Cr thickness tCr??1.5?nm, strongly coupled parallel Co-Fe reversal and weakly coupled layer independent reversal are observed, respectively. The transition between these two reversal mechanisms for 0.34?

  6. Understanding thermal transport in asymmetric layer hexagonal boron nitride heterostructure

    NASA Astrophysics Data System (ADS)

    Zhang, Jingchao; Wang, Xinyu; Hong, Yang; Xiong, Qingang; Jiang, Jin; Yue, Yanan

    2017-01-01

    In this work, thermal transport at the junction of an asymmetric layer hexagonal boron-nitride (h-BN) heterostructure is explored using a non-equilibrium molecular dynamics method. A thermal contact resistance of 3.6 × 10-11 K · m2 W-1 is characterized at a temperature of 300 K with heat flux from the trilayer to monolayer regions. The mismatch in the flexural phonon modes revealed by power spectra analysis provides the driving force for the calculated thermal resistance. A high thermal rectification efficiency of 360% is calculated at the layer junction surpassing that of graphene. Several modulators, i.e. the system temperature, contact pressure and lateral dimensions, are applied to manipulate the thermal conductance and rectification across the interfaces. The predicted thermal rectification sustains positive correlations with temperature and phonon propagation lengths with little change to the coupling strength.

  7. Enhanced Surface-and-Interface Coupling in Pd-Nanoparticle-coated LaAlO3/SrTiO3 Heterostructures: Strong Gas- and Photo-Induced Conductance Modulation

    PubMed Central

    Kim, Haeri; Chan, Ngai Yui; Dai, Ji-yan; Kim, Dong-Wook

    2015-01-01

    Pd nanoparticle (NP) coated LaAlO3/SrTiO3 (LAO/STO) heterointerface exhibits more notable conductance (G) change while varying the ambient gas (N2, H2/N2, and O2) and illuminating with UV light (wavelength: 365 nm) than a sample without the NPs. Simultaneous Kelvin probe force microscopy and transport measurements reveal close relationships between the surface work function (W) and G of the samples. Quantitative analyses suggest that a surface adsorption/desorption-mediated reaction and redox, resulting in a band-alignment modification and charge-transfer, could explain the gas- and photo-induced conductance modulation at the LAO/STO interface. Such surface-and-interface coupling enhanced by catalytic Pd NPs is a unique feature, quite distinct from conventional semiconductor hetero-junctions, which enables the significant conductance tunability at ultrathin oxide heterointerfaces by external stimuli. PMID:25704566

  8. Devices and applications of van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Li, Chao; Zhou, Peng; Zhang, David Wei

    2017-03-01

    Van der Waals heterostructures, composed of individual two-dimensional material have been developing extremely fast. Synthesis of van der Waals heterostructures without the constraint of lattice matching and processing compatibility provides an ideal platform for fundamental research and new device exploitation. We review the approach of synthesis of van der Waals heterostructures, discuss the property of heterostructures and thoroughly illustrate the functional van der Waals heterostructures used in novel electronic and photoelectronic device. Project supported by the National Key Research and Development Program (No. 2016YFA0203900) and the National Natural Science Foundation of China (Nos. 61376093, 61622401).

  9. A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures.

    PubMed

    Wofford, Joseph M; Nakhaie, Siamak; Krause, Thilo; Liu, Xianjie; Ramsteiner, Manfred; Hanke, Michael; Riechert, Henning; J Lopes, J Marcelo

    2017-02-27

    Van der Waals heterostructures combining hexagonal boron nitride (h-BN) and graphene offer many potential advantages, but remain difficult to produce as continuous films over large areas. In particular, the growth of h-BN on graphene has proven to be challenging due to the inertness of the graphene surface. Here we exploit a scalable molecular beam epitaxy based method to allow both the h-BN and graphene to form in a stacked heterostructure in the favorable growth environment provided by a Ni(111) substrate. This involves first saturating a Ni film on MgO(111) with C, growing h-BN on the exposed metal surface, and precipitating the C back to the h-BN/Ni interface to form graphene. The resulting laterally continuous heterostructure is composed of a top layer of few-layer thick h-BN on an intermediate few-layer thick graphene, lying on top of Ni/MgO(111). Examinations by synchrotron-based grazing incidence diffraction, X-ray photoemission spectroscopy, and UV-Raman spectroscopy reveal that while the h-BN is relaxed, the lattice constant of graphene is significantly reduced, likely due to nitrogen doping. These results illustrate a different pathway for the production of h-BN/graphene heterostructures, and open a new perspective for the large-area preparation of heterosystems combining graphene and other 2D or 3D materials.

  10. A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures

    PubMed Central

    Wofford, Joseph M.; Nakhaie, Siamak; Krause, Thilo; Liu, Xianjie; Ramsteiner, Manfred; Hanke, Michael; Riechert, Henning; J. Lopes, J. Marcelo

    2017-01-01

    Van der Waals heterostructures combining hexagonal boron nitride (h-BN) and graphene offer many potential advantages, but remain difficult to produce as continuous films over large areas. In particular, the growth of h-BN on graphene has proven to be challenging due to the inertness of the graphene surface. Here we exploit a scalable molecular beam epitaxy based method to allow both the h-BN and graphene to form in a stacked heterostructure in the favorable growth environment provided by a Ni(111) substrate. This involves first saturating a Ni film on MgO(111) with C, growing h-BN on the exposed metal surface, and precipitating the C back to the h-BN/Ni interface to form graphene. The resulting laterally continuous heterostructure is composed of a top layer of few-layer thick h-BN on an intermediate few-layer thick graphene, lying on top of Ni/MgO(111). Examinations by synchrotron-based grazing incidence diffraction, X-ray photoemission spectroscopy, and UV-Raman spectroscopy reveal that while the h-BN is relaxed, the lattice constant of graphene is significantly reduced, likely due to nitrogen doping. These results illustrate a different pathway for the production of h-BN/graphene heterostructures, and open a new perspective for the large-area preparation of heterosystems combining graphene and other 2D or 3D materials. PMID:28240323

  11. Complementary junction heterostructure field-effect transistor

    DOEpatents

    Baca, A.G.; Drummond, T.J.; Robertson, P.J.; Zipperian, T.E.

    1995-12-26

    A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits. 10 figs.

  12. Complementary junction heterostructure field-effect transistor

    DOEpatents

    Baca, Albert G.; Drummond, Timothy J.; Robertson, Perry J.; Zipperian, Thomas E.

    1995-01-01

    A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.

  13. Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers

    NASA Astrophysics Data System (ADS)

    Sinha, Jaivardhan; Hayashi, Masamitsu; Kellock, Andrew J.; Fukami, Shunsuke; Yamanouchi, Michihiko; Sato, Hideo; Ikeda, Shoji; Mitani, Seiji; Yang, See-hun; Parkin, Stuart S. P.; Ohno, Hideo

    2013-06-01

    We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In particular, the saturation magnetization drops upon doping the Ta underlayer, suggesting that the doped underlayer acts as a boron diffusion barrier. In addition, the thickness of the magnetic dead layer decreases with increasing nitrogen doping. Surprisingly, the interface magnetic anisotropy increases to ˜1.8 erg/cm2 when an optimum amount of nitrogen is introduced into the Ta underlayer. These results show that nitrogen doped Ta serves as a good underlayer for spintronic applications including magnetic tunnel junctions and domain wall devices.

  14. High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

    SciTech Connect

    Hwan Lee, Seung; Lee, Jia; Ho Ra, Chang; Liu, Xiaochi; Hwang, Euyheon; Sup Choi, Min; Hee Choi, Jun; Zhong, Jianqiang; Chen, Wei; Jong Yoo, Won

    2014-02-03

    A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V{sup −1}, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.

  15. Manipulable MR effect in a δ-doped magnetic nanostructure

    NASA Astrophysics Data System (ADS)

    Kong, Yong-Hong; Jiang, Ya-Qing; Fu, Xi; Li, Ai-Hua

    2016-05-01

    A magnetoresistance (MR) device was proposed by depositing two nanosized ferromagnetic strips on top and bottom of the semiconductor heterostructure. For the sake of manipulating its performance, we introduce a tunable δ-potential into this device with the help of the atomic-layer doping technique such as molecular beam epitaxy (MBE) or metal-organic chemical-vapor deposition (MOCVD). We investigate theoretically the impact of the δ-doping on the magnetoresistance ratio (MMRR) of the MR device. Although the δ-doping is embedded in the device, a considerable MR effect still exists due to different transmissions for the electron across parallel (P) and antiparallel (AP) configurations. Moreover, its MMRR varies sensitively with the magnitude and/or position of the δ-doping. Such an MR device can be controlled by changing the δ-doping, resulting in an adjustable MR device for magnetoelectronics applications.

  16. Nanocrystalline Fe-Fe2O3 particle-deposited N-doped graphene as an activity-modulated Pt-free electrocatalyst for oxygen reduction reaction

    NASA Astrophysics Data System (ADS)

    Dhavale, Vishal M.; Singh, Santosh K.; Nadeema, Ayasha; Gaikwad, Sachin S.; Kurungot, Sreekumar

    2015-11-01

    The size-controlled growth of nanocrystalline Fe-Fe2O3 particles (2-3 nm) and their concomitant dispersion on N-doped graphene (Fe-Fe2O3/NGr) could be attained when the mutually assisted redox reaction between NGr and Fe3+ ions could be controlled within the aqueous droplets of a water-in-oil emulsion. The synergistic interaction existing between Fe-Fe2O3 and NGr helped the system to narrow down the overpotential for the oxygen reduction reaction (ORR) by bringing a significant positive shift to the reduction onset potential, which is just 15 mV higher than its Pt-counterpart. In addition, the half-wave potential (E1/2) of Fe-Fe2O3/NGr is found to be improved by a considerable amount of 135 mV in comparison to the system formed by dispersing Fe-Fe2O3 nanoparticles on reduced graphene oxide (Fe-Fe2O3/RGO), which indicates the presence of a higher number of active sites in Fe-Fe2O3/NGr. Despite this, the ORR kinetics of Fe-Fe2O3/NGr are found to be shifted significantly to the preferred 4-electron-transfer pathway compared to NGr and Fe-Fe2O3/RGO. Consequently, the H2O2% was found to be reduced by 78.3% for Fe-Fe2O3/NGr (13.0%) in comparison to Fe-Fe2O3/RGO (51.2%) and NGr (41.0%) at -0.30 V (vs. Hg/HgO). This difference in the yield of H2O2 formed between the systems along with the improvements observed in terms of the oxygen reduction onset and E1/2 in the case of Fe-Fe2O3/NGr reveals the activity modulation achieved for the latter is due to the coexistence of factors such as the presence of the mixed valancies of iron nanoparticles, small size and homogeneous distribution of Fe-Fe2O3 nanoparticles and the electronic modifications induced by the doped nitrogen in NGr. A controlled interplay of these factors looks like worked favorably in the case of Fe-Fe2O3/NGr. As a realistic system level validation, Fe-Fe2O3/NGr was employed as the cathode electrode of a single cell in a solid alkaline electrolyte membrane fuel cell (AEMFC). The system could display an open

  17. Growth of Ga-doped ZnO nanowires by two-step vapor phase method

    SciTech Connect

    Xu, C.; Kim, M.; Chun, J.; Kim, D.

    2005-03-28

    A two-step route is presented to dope Ga into ZnO nanowires and also fabricate heterostructures of Ga-doped ZnO nanowires on ZnO. The content of Ga in ZnO nanowires is about 7 at. % from energy-dispersive x-ray analysis. The single crystal Ga doped ZnO nanowires with the diameter of 40 nm and the length of 300-500 nm are well aligned on the ZnO bulk. The growth direction is along [001]. Raman scattering analysis shows that the doping of Ga into ZnO nanowires depresses Raman E{sub 1L} mode of ZnO, manifesting that Ga sites in ZnO are Zn sites (Ga{sub Zn}). The formation mechanism of Zn{sub 1-x}Ga{sub x}O nanowires/ZnO heterostructures is proposed.

  18. Photo-doped carrier dynamics in Mott insulatoring systems

    NASA Astrophysics Data System (ADS)

    Iyoda, Eiki; Ishihara, Sumio

    2013-03-01

    Electron/hole doping in Mott insulators, for example two-dimensional cuprates, has been well investigated in relation to high-Tc superconductivity. Especially related to photo-doping, many experiments on photo-induced phase transition in strongly correlated systems have been made. In the usual photo-doping setup, the system is excited with fs-laser pulse and generated electron-hole pairs affect properties of materials. Recently, another type of photo-doped experiment with heterostructure has been made, and hole or electron carriers are dynamically injected through the heterostructure. In this theoretical study, we examine photo-doped carrier dynamics in the t-J model with dynamically doped holes. We formulate dynamics of the carriers by non-equilibrium Green functions. We take an initial state of holes and decompose the non-equilibrium Green's function into a series of equilibrium Green's functions by using Wick's theorem. The effect of the initial distribution appears from the higher terms in the series. We treat magnons with the self-consistent Born approximation. The non-equilibrium Green function derived in this way shows double time dependence. We will present physical quantities in transient process, for example, one-particle excitation spectra for holes.

  19. Optical investigations of InGaN heterostructures and GeSn nanocrystals for photonic and phononic applications: light emitting diodes and phonon cavities

    NASA Astrophysics Data System (ADS)

    Hafiz, Shopan din Ahmad

    InGaN heterostructures are at the core of blue light emitting diodes (LEDs) which are the basic building blocks for energy efficient and environment friendly modern white light generating sources. Through quantum confinement and electronic band structure tuning on the opposite end of the spectrum, Ge1-xSnx alloys have recently attracted significant interest due to its potential role as a silicon compatible infra-red (IR) optical material for photodetectors and LEDs owing to transition to direct bandgap with increasing Sn. This thesis is dedicated to establishing an understanding of the optical processes and carrier dynamics in InGaN heterostructures for achieving more efficient visible light emitters and terahertz generating nanocavities and in colloidal Ge1-xSnx quantum dots (QDs) for developing efficient silicon compatible optoelectronics. To alleviate the electron overflow, which through strong experimental evidence is revealed to be the dominating mechanism responsible for efficiency degradation at high injection in InGaN based blue LEDs, different strategies involving electron injectors and optimized active regions have been developed. Effectiveness of optimum electron injector (EI) layers in reducing electron overflow and increasing quantum efficiency of InGaN based LEDs was demonstrated by photoluminescence (PL) and electroluminescence spectroscopy along with numerical simulations. Increasing the two-layer EI thickness in double heterostructure LEDs substantially reduced the electron overflow and increased external quantum efficiency (EQE) by three fold. By incorporating delta p-doped InGaN barriers in multiple quantum well (MQW) LEDs, 20% enhancement in EQE was achieved due to improved hole injection without degrading the layer quality. Carrier diffusion length, an important physical parameter that directly affects the performance of optoelectronic devices, was measured in epitaxial GaN using PL spectroscopy. The obtained diffusion lengths at room

  20. Single heterostructure lasers: a UK perspective

    NASA Astrophysics Data System (ADS)

    Selway, Peter

    2012-09-01

    The gallium-aluminium-arsenide single heterostructure laser was the first commercially successful semiconductor laser produced in the UK. This paper presents a personal perspective on the events leading up to volume production and highlights the fascinating physics involved in this device and the impact of this on the task of engineering a robust component which was eventually manufactured for over 20 years.

  1. Investigation of Quantum Effects in Heterostructures

    DTIC Science & Technology

    1993-08-20

    Mendez and C. Tejedor (Plenum, New York, 1991), p. 1. "* Resonant Magnetotunneling in Type-Il Heterostructures, in Resonant Tunneling in Semiconductors...Physics and Applications, ed. by L. L. Chang, E. E. Mendez and C. Tejedor (Plenum, New York, 1991), p. 51. "* The Evolution of Semiconductor Quantum

  2. Design and discovery of heterostructural alloys

    NASA Astrophysics Data System (ADS)

    Holder, Aaron; Siol, Sebastian; Ndione, Paul; Peng, Haowei; Zakutayev, Andriy; Lany, Stephan; Matthews, Bethany; Tate, Janet; Gorman, Brian; Gordon, Roy; Schelhas, Laura; Toney, Mike

    The tailoring of materials properties by alloying is routinely utilized to design materials for targeted technological applications. Despite the great successes of alloying in isostructural systems, heterostructural alloying remains a fundamentally unexplored area. In heterostructural alloys, the crossover between different crystal structures enables a new parameter for control over structure and properties by variation of the composition. Here, we present a complementary theoretical and experimental investigation of novel semiconducting metal chalcogenide alloys to develop design principles and approaches for utilizing heterostructural alloying as a materials design strategy. We use ab initio methods to predict the structural and electronic properties of novel alloys with commensurate and incommensurate lattice symmetries. Non-equilibrium deposition methods are employed to overcome thermodynamic solubility limits and produce metastable thin-film samples across the entire alloy composition range. The prediction, theory-guided combinatorial synthesis, and characterization of heterostructural alloys demonstrate the design and discovery of functional metastable materials. Our approach establishes a new route for the control of structure-property and composition-structure relationships by accessing non-equilibrium phase space to develop new materials with uniquely tailored properties.

  3. Interface magnetism in complex oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Srikanth, Hariharan

    2008-03-01

    Magnetic oxides are an important class of materials from the perspectives of fundamental physics and technological applications. Advances in growth of high quality thin films and epitaxial oxide heterostructures over the years, have led to the realization of ideal condensed matter systems in which the complex and rich physics associated with cooperative phenomena can be explored. Examples of coupled phenomena in heterostructures include exchange bias effects, magnetoelectric coupling and interplay between magnetism and superconductivity. In this talk, I will focus on three classes of oxide heterostructures --PLD-grown M-type barium hexaferrite(BaM)/barium strontium titanate(BST), CVD-grown CrO2/Cr2O3 bilayers and high-pressure sputtered LCMO/YBCO films. The common theme is the magnetic coupling across the interfaces. I will demonstrate that dynamic susceptibility and kinetic inductance experiments using a sensitive tunnel-diode oscillator (TDO) are effective probes of such coupled effects. In the case of CrO2/Cr2O3 and LCMO/YBCO, the interface coupling results in anomalous anisotropy, exchange bias in the former and complex interaction between the LCMO magnetism and YBCO vortex lattice in the latter. In BaM/BST heterostructures, I will discuss how interfacial coupling influences the microwave response that is both electrically and magnetically tunable.

  4. Strain induced piezoelectric effect in black phosphorus and MoS2 van der Waals heterostructure

    PubMed Central

    Huang, Le; Li, Yan; Wei, Zhongming; Li, Jingbo

    2015-01-01

    The structural, electronic, transport and optical properties of black phosphorus/MoS2 (BP/MoS2) van der Waals (vdw) heterostructure are investigated by using first principles calculations. The band gap of BP/MoS2 bilayer decreases with the applied normal compressive strain and a semiconductor-to-metal transition is observed when the applied strain is more than 0.85 Å. BP/MoS2 bilayer also exhibits modulation of its carrier effective mass and carrier concentration by the applied compressive strain, suggesting that mobility engineering and good piezoelectric effect can be realized in BP/MoS2 heterostructure. Because the type-II band alignment can facilitate the separation of photo-excited electrons and holes, and it can benefit from the great absorption coefficient in ultra-violet region, the BP/MoS2 shows great potential to be a very efficient ultra-violet photodetector. PMID:26553370

  5. Dual-donor (Zn(i) and V(O)) mediated ferromagnetism in copper-doped ZnO micron-scale polycrystalline films: a thermally driven defect modulation process.

    PubMed

    Hu, Liang; Huang, Jun; He, Haiping; Zhu, Liping; Liu, Shijiang; Jin, Yizheng; Sun, Luwei; Ye, Zhizhen

    2013-05-07

    The paper reports robust ferromagnetic Cu-doped ZnO micron-scale polycrystalline films via spin-coating using high-quality doped nanocrystals. A reliable magnetic response is observed in the 900 °C vacuum annealed film without any ferromagnetic contribution from other sources. Post-annealing treatment in terms of atmosphere and temperature can control the proportion of oxygen vacancies (V(O)) and zinc interstitials (Zn(i)) defects and further help to precisely regulate defect-related ferromagnetic behavior. Complex charge transfer processes derived from dual-donor (Zn(i) and V(O)) to Cu acceptor are revealed by photoluminescence (PL) and electron paramagnetic resonance (EPR) spectra. Based on the above, specific charge transfer (CT)-type Stoner splitting and indirect double-exchange mechanisms are proposed to understand the ferromagnetic origin. The improvable FM performance and annealing-specific modulation further indicate that a thermal driven process can delicately tailor the magnetic property of the transition metal ion-doped ZnO system.

  6. The Nernst effect in ferromagnet-superconductor bilayer heterostructures

    NASA Astrophysics Data System (ADS)

    Matusiak, M.; Lochmajer, H.; Przysłupski, P.; Rogacki, K.

    2015-11-01

    We report the transport properties of the La0.67Sr0.33MnO3 (LSMO)/YBa2Cu3O7+d (YBCO) heterostructures in the vicinity of the superconducting transition. The bottom deposited manganite was an LSMO ferromagnet with a Curie temperature of 350 K, while the top deposited cuprate was a nearly optimally doped YBCO superconductor with T c ˜ 90 K. The samples used in these studies had fixed a thickness of LSMO layer (90 nm), whereas the thickness of the YBCO layer was varied between 20 and 100 nm. Single YBCO layers with respective thicknesses were also measured for comparison. The mixed state properties of the bilayers and single layers were characterized by means of the Nernst effect and electrical resistance measurements in magnetic fields of up to B = 12.5 T. All investigated samples show a zero-resistance state below T = 60 K in a field of 12.5 T and demonstrate gradual degradation of the superconducting properties with decreasing thickness of the YBCO layer in bilayer structures.

  7. Tunneling spectroscopy in engineered SrTiO3 heterostructures

    NASA Astrophysics Data System (ADS)

    Swartz, Adrian; Inoue, Hisashi; Merz, Tyler; Hikita, Yasuyuki; Hwang, Harold

    Despite decades of intense research on the topic, superconductivity in the dilute high- k semiconductor SrTiO3 (STO) has posed a long-standing problem. In light of the recent reports of unconventional 2D superconductivity in STO-based heterostructures, this problem deserves renewed attention in the bulk limit. Tunneling spectroscopy, which directly measures the electronic density of states, is a powerful tool to investigate the superconducting ground state as well as the relevant electron-phonon couplings. A limiting obstacle for employing this technique is the long depletion lengths formed when semiconducting SrTiO3 is contacted with a metal in Schottky junctions, which obstructs access to the intrinsic bulk electronic properties. Here, using band alignment engineered planar tunneling junctions to minimize these long depletion lengths, we experimentally re-examine canonical tunneling experiments in Nb-doped STO. We discuss our results on the extraction of the electron-phonon coupling in SrTiO3 and it's relevance to the superconducting condensate.

  8. Quantum devices in silicon/silicon germanium heterostructures

    NASA Astrophysics Data System (ADS)

    Slinker, Keith A.

    This thesis presents the fabrication and characterization of silicon/silicon-germanium quantum wells, quantum dots, and quantum point contacts. These systems are promising for quantum computing applications due to the long predicted spin lifetimes. In addition, the valley states in Si/SiGe two-dimensional electron gases (2DEGs) are a novel phenomenon in regards to nanostructures, and characterizing these states is also necessary for potential computing applications. However, working with these heterostructures---especially in regards to metal Schottky gating---has proved historically challenging such that single electron transistors had not been achieved at the onset of this research. The first quantum dots in Si/SiGe are presented, defined completely by CF4 reactive ion etch without the use of metal gates. Etch-defined 2DEG side gates are used to modulate the potential of the quantum dot. Results for various metal gating schemes are also presented, culminating in the first Schottky-gated quantum dots in Si/SiGe. Differing from the etch-defined dots, the tunnel junctions of the metal-etch hybrid dot are fully tunable by the voltage applied to the top gates. Hall measurements of multiple heterostructures are presented, providing evidence that many of the challenges associated with gating Si/SiGe can be attributed to undepleted dopants in the supply layer. These dopants screen the top gates but can be detected as a parallel conduction channel in Hall measurements taken at a 2 K. A fully top-gate defined quantum dot was fabricated on an optimized Si/SiGe heterostructure, and the single particle excited states were resolved for the first time in Si/SiGe. Finally, quantum point contacts were defined by metal top gates, and the conduction was mapped out over a large range of magnetic field and voltages on the gates. The positions of the conductance steps are used to extract the valley splitting---a quantity that had been measured in a bulk 2DEG but not in a nanostructure

  9. Probing charge transfer in a novel class of luminescent perovskite-based heterostructures composed of quantum dots bound to RE-activated CaTiO3 phosphors

    NASA Astrophysics Data System (ADS)

    Lewis, Crystal S.; Liu, Haiqing; Han, Jinkyu; Wang, Lei; Yue, Shiyu; Brennan, Nicholas A.; Wong, Stanislaus S.

    2016-01-01

    We report on the synthesis and structural characterization of novel semiconducting heterostructures composed of cadmium selenide (CdSe) quantum dots (QDs) attached onto the surfaces of novel high-surface area, porous rare-earth-ion doped alkaline earth titanate micron-scale spherical motifs, i.e. both Eu-doped and Pr-doped CaTiO3, composed of constituent, component nanoparticles. These unique metal oxide perovskite building blocks were created by a multi-pronged synthetic strategy involving molten salt and hydrothermal protocols. Subsequently, optical characterization of these heterostructures indicated a clear behavioral dependence of charge transfer in these systems upon a number of parameters such as the nature of the dopant, the reaction temperature, and particle size. Specifically, 2.7 nm diameter ligand-functionalized CdSe QDs were anchored onto sub-micron sized CaTiO3-based spherical assemblies, prepared by molten salt protocols. We found that both the Pr- and Eu-doped CaTiO3 displayed pronounced PL emissions, with maximum intensities observed using optimized lanthanide concentrations of 0.2 mol% and 6 mol%, respectively. Analogous experiments were performed on Eu-doped BaTiO3 and SrTiO3 motifs, but CaTiO3 still performed as the most effective host material amongst the three perovskite systems tested. Moreover, the ligand-capped CdSe QD-doped CaTiO3 heterostructures exhibited effective charge transfer between the two individual constituent nanoscale components, an assertion corroborated by the corresponding quenching of their measured PL signals.We report on the synthesis and structural characterization of novel semiconducting heterostructures composed of cadmium selenide (CdSe) quantum dots (QDs) attached onto the surfaces of novel high-surface area, porous rare-earth-ion doped alkaline earth titanate micron-scale spherical motifs, i.e. both Eu-doped and Pr-doped CaTiO3, composed of constituent, component nanoparticles. These unique metal oxide perovskite

  10. Formation of core@multi-shell CdSe@CdZnS-ZnS quantum dot heterostructure films by pulse electrophoresis deposition

    NASA Astrophysics Data System (ADS)

    Raj, Sudarsan; Yun, Jin Hyeon; Adilbish, Ganpurev; Ch, Rama Krishna; Lee, In Hwan; Lee, Min Sang; Yu, Yeon-Tae

    2015-07-01

    CdSe@CdZnS-ZnS core@multi-shell quantum dot (QD) heterostructures were deposited on fluorine doped tinoxide (FTO) glass substrate by pulse electrophoresis deposition (EPD). Field emissions scanning electron microscopy (FESEM) images reveal that the number of QDs deposited on the substrate increased with prolonged deposition time. Ethanol is the better solution medium as compared to 2-propanol for pulse electrophoresis deposition. For longer deposition time the intensity of photo luminescence (PL) peak increased.

  11. Properties of ferroelectric/ferromagnetic thin film heterostructures

    NASA Astrophysics Data System (ADS)

    Chen, Daming; Harward, Ian; Linderman, Katie; Economou, Evangelos; Nie, Yan; Celinski, Zbigniew

    2014-05-01

    Ferroelectric/ferromagnetic thin film heterostructures, SrBi2Ta2O9/BaFe12O19 (SBT/BaM), were grown on platinum-coated Si substrates using metal-organic decomposition. X-ray diffraction patterns confirmed that the heterostructures contain only SBT and BaM phases. The microwave properties of these heterostructures were studied using a broadband ferromagnetic resonance (FMR) spectrometer from 35 to 60 GHz, which allowed us to determine gyromagnetic ratio and effective anisotropy field. The FMR linewidth is as low as140 Oe at 58 GHz. In addition, measurements of the effective permittivity of the heterostructures were carried out as a function of bias electric field. All heterostructures exhibit hysteretic behavior of the effective permittivity. These properties indicate that such heterostructures have potential for application in dual electric and magnetic field tunable resonators, filters, and phase shifters.

  12. Heterostructures based on inorganic and organic van der Waals systems

    NASA Astrophysics Data System (ADS)

    Lee, Gwan-Hyoung; Lee, Chul-Ho; van der Zande, Arend M.; Han, Minyong; Cui, Xu; Arefe, Ghidewon; Nuckolls, Colin; Heinz, Tony F.; Hone, James; Kim, Philip

    2014-09-01

    The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS2 heterostructures for memory devices; graphene/MoS2/WSe2/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors.

  13. Probing charge transfer in a novel class of luminescent perovskite-based heterostructures composed of quantum dots bound to RE-activated CaTiO3 phosphors

    DOE PAGES

    Crystal S. Lewis; Wong, Stanislaus S.; Liu, Haiqing; ...

    2016-01-04

    We report on the synthesis and structural characterization of novel semiconducting heterostructures composed of cadmium selenide (CdSe) quantum dots (QDs) attached onto the surfaces of novel high-surface area, porous rare-earth-ion doped alkaline earth titanate micron-scale spherical motifs, i.e. both Eu-doped and Pr-doped CaTiO3, composed of constituent, component nanoparticles. These unique metal oxide perovskite building blocks were created by a multi-pronged synthetic strategy involving molten salt and hydrothermal protocols. Subsequently, optical characterization of these heterostructures indicated a clear behavioral dependence of charge transfer in these systems upon a number of parameters such as the nature of the dopant, the reaction temperature,more » and particle size. Specifically, 2.7 nm diameter ligand-functionalized CdSe QDs were anchored onto sub-micron sized CaTiO3-based spherical assemblies, prepared by molten salt protocols. We found that both the Pr- and Eu-doped CaTiO3 displayed pronounced PL emissions, with maximum intensities observed using optimized lanthanide concentrations of 0.2 mol% and 6 mol%, respectively. Analogous experiments were performed on Eu-doped BaTiO3 and SrTiO3 motifs, but CaTiO3 still performed as the most effective host material amongst the three perovskite systems tested. Furthermore, the ligand-capped CdSe QD-doped CaTiO3 heterostructures exhibited effective charge transfer between the two individual constituent nanoscale components, an assertion corroborated by the corresponding quenching of their measured PL signals.« less

  14. Controllable optical modulation of blue/green up-conversion fluorescence from Tm3+ (Er3+) single-doped glass ceramics upon two-step excitation of two-wavelengths

    PubMed Central

    Chen, Zhi; Kang, Shiliang; Zhang, Hang; Wang, Ting; Lv, Shichao; Chen, Qiuqun; Dong, Guoping; Qiu, Jianrong

    2017-01-01

    Optical modulation is a crucial operation in photonics for network data processing with the aim to overcome information bottleneck in terms of speed, energy consumption, dispersion and cross-talking from conventional electronic interconnection approach. However, due to the weak interactions between photons, a facile physical approach is required to efficiently manipulate photon-photon interactions. Herein, we demonstrate that transparent glass ceramics containing LaF3: Tm3+ (Er3+) nanocrystals can enable fast-slow optical modulation of blue/green up-conversion fluorescence upon two-step excitation of two-wavelengths at telecom windows (0.8–1.8 μm). We show an optical modulation of more than 1500% (800%) of the green (blue) up-conversion fluorescence intensity, and fast response of 280 μs (367 μs) as well as slow response of 5.82 ms (618 μs) in the green (blue) up-conversion fluorescence signal, respectively. The success of manipulating laser at telecom windows for fast-slow optical modulation from rear-earth single-doped glass ceramics may find application in all-optical fiber telecommunication areas. PMID:28368041

  15. Controllable optical modulation of blue/green up-conversion fluorescence from Tm(3+) (Er(3+)) single-doped glass ceramics upon two-step excitation of two-wavelengths.

    PubMed

    Chen, Zhi; Kang, Shiliang; Zhang, Hang; Wang, Ting; Lv, Shichao; Chen, Qiuqun; Dong, Guoping; Qiu, Jianrong

    2017-04-03

    Optical modulation is a crucial operation in photonics for network data processing with the aim to overcome information bottleneck in terms of speed, energy consumption, dispersion and cross-talking from conventional electronic interconnection approach. However, due to the weak interactions between photons, a facile physical approach is required to efficiently manipulate photon-photon interactions. Herein, we demonstrate that transparent glass ceramics containing LaF3: Tm(3+) (Er(3+)) nanocrystals can enable fast-slow optical modulation of blue/green up-conversion fluorescence upon two-step excitation of two-wavelengths at telecom windows (0.8-1.8 μm). We show an optical modulation of more than 1500% (800%) of the green (blue) up-conversion fluorescence intensity, and fast response of 280 μs (367 μs) as well as slow response of 5.82 ms (618 μs) in the green (blue) up-conversion fluorescence signal, respectively. The success of manipulating laser at telecom windows for fast-slow optical modulation from rear-earth single-doped glass ceramics may find application in all-optical fiber telecommunication areas.

  16. Pulsed terahertz emission from GaN/InN heterostructure

    NASA Astrophysics Data System (ADS)

    Reklaitis, Antanas

    2011-11-01

    Dynamics of the electron-hole plasma excited by the femtosecond optical pulse in wurtzite GaN/InN heterostructure is investigated by Monte Carlo simulations. The GaN/InN heterostructure for pulsed terahertz emission is suggested. The results of Monte Carlo simulations show that the power of terahertz emission from the GaN/InN heterostructure exceeds the power of terahertz emission from the surface of InN by one order of magnitude.

  17. Graphene contacts to a HfSe2/SnS2 heterostructure.

    PubMed

    Su, Shanshan; Das, Protik; Ge, Supeng; Lake, Roger K

    2017-02-14

    Two-dimensional (2D) heterostructures and all-2D contacts are of high interest for electronic device applications, and the SnS2/HfSe2 bilayer heterostructure with graphene contacts has some unique, advantageous properties. The SnS2/HfSe2 heterostructure is interesting because of the strong intermixing of the two conduction bands and the large work function of the SnS2. The band lineup of the well separated materials indicates a type II heterostructure, but the conduction band minimum of the SnS2/HfSe2 bilayer is a coherent superposition of the orbitals from the two layers with a spectral weight of 60% on the SnS2 and 40% on the HfSe2 for AA stacking. These relative weights can be either increased or reversed by an applied vertical field. A 3×3 supercell of graphene and a 2×2 supercell of SnS2/HfSe2 have a lattice mismatch of 0.1% and both the SnS2/HfSe2 conduction band at M and the graphene Dirac point at K are zone-folded to Γ. Placing graphene on the SnS2/HfSe2 bilayer results in large n-type charge transfer doping of the SnS2/HfSe2 bilayer, on the order of 10(13)/cm(2), and the charge transfer is accompanied by a negative Schottky barrier contact for electron injection from the graphene into the SnS2/HfSe2 bilayer conduction band. Binding energies and the anti-crossing gaps of the graphene and the SnS2/HfSe2 electronic bands both show that the coupling of graphene to the HfSe2 layer is significantly larger than its coupling to the SnS2 layer. A tunneling Hamiltonian estimate of the contact resistance of the graphene to the SnS2/HfSe2 heterostructure predicts an excellent low-resistance contact.

  18. Graphene contacts to a HfSe2/SnS2 heterostructure

    NASA Astrophysics Data System (ADS)

    Su, Shanshan; Das, Protik; Ge, Supeng; Lake, Roger K.

    2017-02-01

    Two-dimensional (2D) heterostructures and all-2D contacts are of high interest for electronic device applications, and the SnS2/HfSe2 bilayer heterostructure with graphene contacts has some unique, advantageous properties. The SnS2/HfSe2 heterostructure is interesting because of the strong intermixing of the two conduction bands and the large work function of the SnS2. The band lineup of the well separated materials indicates a type II heterostructure, but the conduction band minimum of the SnS2/HfSe2 bilayer is a coherent superposition of the orbitals from the two layers with a spectral weight of 60% on the SnS2 and 40% on the HfSe2 for AA stacking. These relative weights can be either increased or reversed by an applied vertical field. A 3 ×3 supercell of graphene and a 2 ×2 supercell of SnS2/HfSe2 have a lattice mismatch of 0.1% and both the SnS2/HfSe2 conduction band at M and the graphene Dirac point at K are zone-folded to Γ . Placing graphene on the SnS2/HfSe2 bilayer results in large n-type charge transfer doping of the SnS2/HfSe2 bilayer, on the order of 1013/cm2, and the charge transfer is accompanied by a negative Schottky barrier contact for electron injection from the graphene into the SnS2/HfSe2 bilayer conduction band. Binding energies and the anti-crossing gaps of the graphene and the SnS2/HfSe2 electronic bands both show that the coupling of graphene to the HfSe2 layer is significantly larger than its coupling to the SnS2 layer. A tunneling Hamiltonian estimate of the contact resistance of the graphene to the SnS2/HfSe2 heterostructure predicts an excellent low-resistance contact.

  19. Airplane dopes and doping

    NASA Technical Reports Server (NTRS)

    Smith, W H

    1919-01-01

    Cellulose acetate and cellulose nitrate are the important constituents of airplane dopes in use at the present time, but planes were treated with other materials in the experimental stages of flying. The above compounds belong to the class of colloids and are of value because they produce a shrinking action on the fabric when drying out of solution, rendering it drum tight. Other colloids possessing the same property have been proposed and tried. In the first stages of the development of dope, however, shrinkage was not considered. The fabric was treated merely to render it waterproof. The first airplanes constructed were covered with cotton fabric stretched as tightly as possible over the winds, fuselage, etc., and flying was possible only in fine weather. The necessity of an airplane which would fly under all weather conditions at once became apparent. Then followed experiments with rubberized fabrics, fabrics treated with glue rendered insoluble by formaldehyde or bichromate, fabrics treated with drying and nondrying oils, shellac, casein, etc. It was found that fabrics treated as above lost their tension in damp weather, and the oil from the motor penetrated the proofing material and weakened the fabric. For the most part the film of material lacked durability. Cellulose nitrate lacquers, however were found to be more satisfactory under varying weather conditions, added less weight to the planes, and were easily applied. On the other hand, they were highly inflammable, and oil from the motor penetrated the film of cellulose nitrate, causing the tension of the fabric to be relaxed.

  20. Lateral photovoltaic effect observed in doping-modulated GaAs/Al0.3Ga0.7As.

    PubMed

    Liu, Ji Hong; Qiao, Shuang; Liang, BaoLai; Wang, ShuFang; Fu, GuangSheng

    2017-02-20

    For photovoltaic effect (PE), both barrier height and carrier lifetime are all very important factors. However, how to distinguish their contributions to the PE is very difficult. In this paper, we prepared a series of GaAs/Al0.3Ga0.7As two dimensional electron gas (2DEG) with typical Al0.3Ga0.7As doping concentration of 0.6 × 1018/cm3, 1.2 × 1018/cm3, and 2.5 × 1018/cm3, respectively (sample number: #1, #2, #3), and studied their lateral photovoltaic effects (LPEs). It is found that their position sensitivities all increase with both laser wavelength and laser power. However, the position sensitivity exhibits a non-monotonic behavior with increasing doping concentration, which can be mainly ascribed to the doping concentration-dependent carrier lifetime, especially in the low power regime. With increasing laser power gradually, the position sensitivity difference between sample #1 and sample #2 is still large and increases a little, while the position sensitivity of sample #3 approaches to that of sample #2, suggesting that the doping concentration-dependent barrier height also starts to play an important role in the high power regime. Our results will provide important information for the design and development of novel and multifunctional PE devices.

  1. Anomalous spontaneous reversal in magnetic heterostructures.

    PubMed

    Li, Zhi-Pan; Eisenmenger, Johannes; Miller, Casey W; Schuller, Ivan K

    2006-04-07

    We observe a thermally induced spontaneous magnetization reversal of epitaxial ferromagnet/antiferromagnet heterostructures under a constant applied magnetic field. Unlike any other magnetic system, the magnetization spontaneously reverses, aligning antiparallel to an applied field with decreasing temperature. We show that this unusual phenomenon is caused by the interfacial antiferromagnetic coupling overcoming the Zeeman energy of the ferromagnet. A significant temperature hysteresis exists, whose height and width can be tuned by the field applied during thermal cycling. The hysteresis originates from the intrinsic magnetic anisotropy in the system. The observation of this phenomenon leads to open questions in the general understanding of magnetic heterostructures. Moreover, this shows that in general heterogeneous nanostructured materials may exhibit unexpected phenomena absent in the bulk.

  2. Superconducting cuprate heterostructures for hot electron bolometers

    NASA Astrophysics Data System (ADS)

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-11-01

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La2-xSrxCuO4 layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV ˜γI3, with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ /dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area ge -ph≈1 W/K cm2 at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity.

  3. Thermal response in van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Naidu Gandi, Appala; Alshareef, Husam N.; Schwingenschlögl, Udo

    2017-01-01

    We solve numerically the Boltzmann transport equations of the phonons and electrons to understand the thermoelectric response in heterostructures of M2CO2 (M: Ti, Zr, Hf) MXenes with transition metal dichalcogenide monolayers. Low frequency optical phonons are found to occur as a consequence of the van der Waals bonding, contribute significantly to the thermal transport, and compensate for the reduced contributions of the acoustic phonons (increased scattering cross-sections in heterostructures), such that the thermal conductivities turn out to be similar to those of the bare MXenes. Our results indicate that the important superlattice design approach of thermoelectrics (to reduce the thermal conductivity) may be effective for two-dimensional van der Waals materials when used in conjunction with intercalation.

  4. Thermal response in van der Waals heterostructures.

    PubMed

    Gandi, Appala Naidu; Alshareef, Husam N; Schwingenschlögl, Udo

    2017-01-25

    We solve numerically the Boltzmann transport equations of the phonons and electrons to understand the thermoelectric response in heterostructures of M2CO2 (M: Ti, Zr, Hf) MXenes with transition metal dichalcogenide monolayers. Low frequency optical phonons are found to occur as a consequence of the van der Waals bonding, contribute significantly to the thermal transport, and compensate for the reduced contributions of the acoustic phonons (increased scattering cross-sections in heterostructures), such that the thermal conductivities turn out to be similar to those of the bare MXenes. Our results indicate that the important superlattice design approach of thermoelectrics (to reduce the thermal conductivity) may be effective for two-dimensional van der Waals materials when used in conjunction with intercalation.

  5. Low energy consumption spintronics using multiferroic heterostructures.

    PubMed

    Trassin, Morgan

    2016-01-27

    We review the recent progress in the field of multiferroic magnetoelectric heterostructures. The lack of single phase multiferroic candidates exhibiting simultaneously strong and coupled magnetic and ferroelectric orders led to an increased effort into the development of artificial multiferroic heterostructures in which these orders are combined by assembling different materials. The magnetoelectric coupling emerging from the created interface between the ferroelectric and ferromagnetic layers can result in electrically tunable magnetic transition temperature, magnetic anisotropy or magnetization reversal. The full potential of low energy consumption magnetic based devices for spintronics lies in our understanding of the magnetoelectric coupling at the scale of the ferroic domains. Although the thin film synthesis progresses resulted into the complete control of ferroic domain ordering using epitaxial strain, the local observation of magnetoelectric coupling remains challenging. The ability to imprint ferroelectric domains into ferromagnets and to manipulate those solely using electric fields suggests new technological advances for spintronics such as magnetoelectric memories or memristors.

  6. Superconducting cuprate heterostructures for hot electron bolometers

    SciTech Connect

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-11-25

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La{sub 2−x}Sr{sub x}CuO{sub 4} layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV∼γI{sup 3}, with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ/dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area g{sub e−ph}≈1 W/K cm{sup 2} at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity.

  7. Oxide heterostructures for efficient solar cells.

    PubMed

    Assmann, Elias; Blaha, Peter; Laskowski, Robert; Held, Karsten; Okamoto, Satoshi; Sangiovanni, Giorgio

    2013-02-15

    We propose an unexplored class of absorbing materials for high-efficiency solar cells: heterostructures of transition-metal oxides. In particular, LaVO(3) grown on SrTiO(3) has a direct band gap ∼1.1  eV in the optimal range as well as an internal potential gradient, which can greatly help to separate the photogenerated electron-hole pairs. Furthermore, oxide heterostructures afford the flexibility to combine LaVO(3) with other materials such as LaFeO(3) in order to achieve even higher efficiencies with band-gap graded solar cells. We use density-functional theory to demonstrate these features.

  8. Resonant pairing of excitons in semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Andreev, S. V.

    2016-10-01

    We suggest indirect excitons in two-dimensional semiconductor heterostructures as a platform for the realization of a bosonic analog of the Bardeen-Cooper-Schrieffer superconductor. The quantum phase transition to a biexcitonic gapped state can be controlled in situ by tuning the electric field applied to the structure in the growth direction. The proposed playground should allow one to go to strongly correlated and high-temperature regimes, unattainable with Feshbach resonant atomic gases.

  9. Periodic potentials in hybrid van der Waals heterostructures formed by supramolecular lattices on graphene

    PubMed Central

    Gobbi, Marco; Bonacchi, Sara; Lian, Jian X.; Liu, Yi; Wang, Xiao-Ye; Stoeckel, Marc-Antoine; Squillaci, Marco A.; D'Avino, Gabriele; Narita, Akimitsu; Müllen, Klaus; Feng, Xinliang; Olivier, Yoann; Beljonne, David; Samorì, Paolo; Orgiu, Emanuele

    2017-01-01

    The rise of 2D materials made it possible to form heterostructures held together by weak interplanar van der Waals interactions. Within such van der Waals heterostructures, the occurrence of 2D periodic potentials significantly modifies the electronic structure of single sheets within the stack, therefore modulating the material properties. However, these periodic potentials are determined by the mechanical alignment of adjacent 2D materials, which is cumbersome and time-consuming. Here we show that programmable 1D periodic potentials extending over areas exceeding 104 nm2 and stable at ambient conditions arise when graphene is covered by a self-assembled supramolecular lattice. The amplitude and sign of the potential can be modified without altering its periodicity by employing photoreactive molecules or their reaction products. In this regard, the supramolecular lattice/graphene bilayer represents the hybrid analogue of fully inorganic van der Waals heterostructures, highlighting the rich prospects that molecular design offers to create ad hoc materials. PMID:28322229

  10. Microwave Properties of Yttrium BARIUM(2) COPPER(3) OXYGEN(7-X)/INSULATOR Heterostructures

    NASA Astrophysics Data System (ADS)

    Findikoglu, Alp Tugrul

    The purpose of the work presented in this dissertation is not only to provide detailed information about the electrodynamic properties of high-T_{c} superconductors but also to assess their potential for technological applications at microwave frequencies. This work adopts a device approach to investigate the microwave properties of high-T_{c} thin films and high-T_{c}/insulator heterostructures, concentrating equally on issues relating to materials, physics, and device technology. Microwave measurements on YBa_2 Cu_3O_{ 7-x} (YBCO) films patterned into meander lines show that the electrodynamic properties of these films are significantly different from those of conventional superconductors such as Nb, but they nevertheless exhibit much lower microwave loss than normal metals such as Cu at low temperatures (<80 K). Dielectric resonator measurements on the YBCO/insulator heterostructures indicate that sample preparation conditions and the geometry of the sample structure have a significant effect on the microwave response. Samples with well-oxygenated layers and clean interfaces behave as predicted by simple models. A detailed study of the dc electric field effect on the microwave response of these heterostructures shows that field modulated changes in both the complex conductivity of the YBCO layers (superconducting hole filling and depletion) and the dielectric properties of the insulating layers (electric field dependence of the dielectric constant) contribute to the overall microwave response.

  11. Functional ferroic heterostructures with tunable integral symmetry.

    PubMed

    Becher, C; Trassin, M; Lilienblum, M; Nelson, C T; Suresha, S J; Yi, D; Yu, P; Ramesh, R; Fiebig, M; Meier, D

    2014-07-02

    The relation between symmetry and functionality was pinpointed by Pierre Curie who stated that it is the symmetry breaking that creates physical properties. This fundamental principle is nowadays used for engineering heterostructures whose integral symmetry leads to exotic phenomena such as one-way transparency. For switching devices, however, such symmetry-related functionalities cannot be used because the symmetry in conventional heterostructures is immutable once the material has been synthesized. Here we demonstrate a concept for post-growth symmetry control in PbZr0.2Ti0.8O3 and BiFeO3-based heterostructures. A conducting oxide is sandwiched between two ferroelectric layers, and inversion symmetry is reversibly switched on or off by layer-selective electric-field poling. The generalization of our approach to other materials and symmetries is discussed. We thus establish ferroic trilayer structures as device components with reversibly tunable symmetry and demonstrate their use as light emitters that can be activated and deactivated by applying moderate electric voltages.

  12. Voltage control of magnetism in multiferroic heterostructures

    PubMed Central

    Liu, Ming; Sun, Nian X.

    2014-01-01

    Electrical tuning of magnetism is of great fundamental and technical importance for fast, compact and ultra-low power electronic devices. Multiferroics, simultaneously exhibiting ferroelectricity and ferromagnetism, have attracted much interest owing to the capability of controlling magnetism by an electric field through magnetoelectric (ME) coupling. In particular, strong strain-mediated ME interaction observed in layered multiferroic heterostructures makes it practically possible for realizing electrically reconfigurable microwave devices, ultra-low power electronics and magnetoelectric random access memories (MERAMs). In this review, we demonstrate this remarkable E-field manipulation of magnetism in various multiferroic composite systems, aiming at the creation of novel compact, lightweight, energy-efficient and tunable electronic and microwave devices. First of all, tunable microwave devices are demonstrated based on ferrite/ferroelectric and magnetic-metal/ferroelectric composites, showing giant ferromagnetic resonance (FMR) tunability with narrow FMR linewidth. Then, E-field manipulation of magnetoresistance in multiferroic anisotropic magnetoresistance and giant magnetoresistance devices for achieving low-power electronic devices is discussed. Finally, E-field control of exchange-bias and deterministic magnetization switching is demonstrated in exchange-coupled antiferromagnetic/ferromagnetic/ferroelectric multiferroic hetero-structures at room temperature, indicating an important step towards MERAMs. In addition, recent progress in electrically non-volatile tuning of magnetic states is also presented. These tunable multiferroic heterostructures and devices provide great opportunities for next-generation reconfigurable radio frequency/microwave communication systems and radars, spintronics, sensors and memories. PMID:24421373

  13. Voltage control of magnetism in multiferroic heterostructures.

    PubMed

    Liu, Ming; Sun, Nian X

    2014-02-28

    Electrical tuning of magnetism is of great fundamental and technical importance for fast, compact and ultra-low power electronic devices. Multiferroics, simultaneously exhibiting ferroelectricity and ferromagnetism, have attracted much interest owing to the capability of controlling magnetism by an electric field through magnetoelectric (ME) coupling. In particular, strong strain-mediated ME interaction observed in layered multiferroic heterostructures makes it practically possible for realizing electrically reconfigurable microwave devices, ultra-low power electronics and magnetoelectric random access memories (MERAMs). In this review, we demonstrate this remarkable E-field manipulation of magnetism in various multiferroic composite systems, aiming at the creation of novel compact, lightweight, energy-efficient and tunable electronic and microwave devices. First of all, tunable microwave devices are demonstrated based on ferrite/ferroelectric and magnetic-metal/ferroelectric composites, showing giant ferromagnetic resonance (FMR) tunability with narrow FMR linewidth. Then, E-field manipulation of magnetoresistance in multiferroic anisotropic magnetoresistance and giant magnetoresistance devices for achieving low-power electronic devices is discussed. Finally, E-field control of exchange-bias and deterministic magnetization switching is demonstrated in exchange-coupled antiferromagnetic/ferromagnetic/ferroelectric multiferroic hetero-structures at room temperature, indicating an important step towards MERAMs. In addition, recent progress in electrically non-volatile tuning of magnetic states is also presented. These tunable multiferroic heterostructures and devices provide great opportunities for next-generation reconfigurable radio frequency/microwave communication systems and radars, spintronics, sensors and memories.

  14. Graphene diamond-like carbon films heterostructure

    SciTech Connect

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B.

    2015-03-09

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications.

  15. Magnetoelectric Heterostructures for Spintronics and Magnetic Sensing

    NASA Astrophysics Data System (ADS)

    Nan, Tianxiang

    Magnetoelectric heterostructures with coupled magnetization and electric polarization across their interfaces enable significantly improvement of performance of many devices such as magnetic sensors, microwave magnetic devices, and spintronics. I will first show that by utilizing a unique ferroelastic polarization switching pathway, one can achieve non-volatile electric-field-switching of magnetism in multiferroic heterostructures with different ferroelectric single crystals through a strain-mediated magnetoelectric coupling. In the same system, with atomically-thin ferromagnets, the interfacial charge-mediated should also be taken into account. The charge- and strain-mediated coupling mechanisms are demonstrated and precisely quantified by the electric-field-tuning of ferromagnetic resonance. With the same technique, magnetic relaxation including intrinsic and extrinsic damping has also been shown to be strongly correlated to the strain, which is attributed to the electric-field-modification of spin-orbit coupling. Moreover, I will also show the tuning of spin-orbit torques from the spin-Hall effect with applied voltage probed with spin-torque ferromagnetic resonance and show the possible application on voltage tunable spin-Hall nano-oscillators. In the second part of my thesis, I will show an ultra-miniaturized magnetoelectric nano-electromechanical system (NEMS) resonator based on an AlN/FeGaB magnetoelectric heterostructure for detecting wide band magnetic fields. With the high Quality factor and the ultra-high resonance frequency, a low DC magnetic field detection limit of 300 pT has been demonstrated.

  16. Diode multipliers for submillimeter-wave InAlAs/InGaAs heterostructure monolithic integrated circuits

    NASA Technical Reports Server (NTRS)

    Kwon, Y.; Pavlidis, D.

    1991-01-01

    InAlAs/InGaAs heterostructures are studied as multiplier elements for submillimeter-wave monolithic integrated circuits. The designs considered for this purpose are based on the principle of conventional HEMT, HEMT with n+ bottom layer, and a new proposed scheme of quantum-confined modulated charge (QCMC). The QCMC diode is analyzed theoretically and experimentally showing its potential operation capability at 1.5 THz.

  17. Tuning Coupling Behavior of Stacked Heterostructures Based on MoS2, WS2, and WSe2

    PubMed Central

    Wang, Fang; Wang, Junyong; Guo, Shuang; Zhang, Jinzhong; Hu, Zhigao; Chu, Junhao

    2017-01-01

    The interlayer interaction of vertically stacked heterojunctions is very sensitive to the interlayer spacing, which will affect the coupling between the monolayers and allow band structure modulation. Here, with the aid of density functional theory (DFT) calculations, an interesting phenomenon is found that MoS2-WS2, MoS2-WSe2, and WS2-WSe2 heterostructures turn into direct-gap semiconductors from indirect-gap semiconductors with increasing the interlayer space. Moreover, the electronic structure changing process with interlayer spacing of MoS2-WS2, MoS2-WSe2, and WS2-WSe2 is different from each other. With the help of variable-temperature spectral experiment, different electronic transition properties of MoS2-WS2, MoS2-WSe2, and WS2-WSe2 have been demonstrated. The transition transformation from indirect to direct can be only observed in the MoS2-WS2 heterostructure, as the valence band maximum (VBM) at the Γ point in the MoS2-WSe2 and WS2-WSe2 heterostructure is less sensitive to the interlayer spacing than those from the MoS2-WS2 heterostructure. The present work highlights the significance of the temperature tuning in interlayer coupling and advance the research of MoS2-WS2, MoS2-WSe2, and WS2-WSe2 based device applications. PMID:28303932

  18. Tuning Coupling Behavior of Stacked Heterostructures Based on MoS2, WS2, and WSe2

    NASA Astrophysics Data System (ADS)

    Wang, Fang; Wang, Junyong; Guo, Shuang; Zhang, Jinzhong; Hu, Zhigao; Chu, Junhao

    2017-03-01

    The interlayer interaction of vertically stacked heterojunctions is very sensitive to the interlayer spacing, which will affect the coupling between the monolayers and allow band structure modulation. Here, with the aid of density functional theory (DFT) calculations, an interesting phenomenon is found that MoS2-WS2, MoS2-WSe2, and WS2-WSe2 heterostructures turn into direct-gap semiconductors from indirect-gap semiconductors with increasing the interlayer space. Moreover, the electronic structure changing process with interlayer spacing of MoS2-WS2, MoS2-WSe2, and WS2-WSe2 is different from each other. With the help of variable-temperature spectral experiment, different electronic transition properties of MoS2-WS2, MoS2-WSe2, and WS2-WSe2 have been demonstrated. The transition transformation from indirect to direct can be only observed in the MoS2-WS2 heterostructure, as the valence band maximum (VBM) at the Γ point in the MoS2-WSe2 and WS2-WSe2 heterostructure is less sensitive to the interlayer spacing than those from the MoS2-WS2 heterostructure. The present work highlights the significance of the temperature tuning in interlayer coupling and advance the research of MoS2-WS2, MoS2-WSe2, and WS2-WSe2 based device applications.

  19. Polarization-controlled tunable rectifying behaviors in highly oriented (K,Na)NbO3/LaNiO3 heterostructures on silicon

    NASA Astrophysics Data System (ADS)

    Xu, Hanni; Liu, Yi; Xu, Bo; Xia, Yidong; Wang, Genshui; Yin, Jiang; Liu, Zhiguo

    2016-09-01

    We report polarization-controlled tunable rectifying behaviors in (K,Na)NbO3 (KNN)/LaNiO3 (LNO) heterostructures on silicon. The heterostructure shows a forward diode behavior at both the high resistance state and the low resistance state. The amplitude dependent rectifying features are attributed to the ferroelectric modulation effect on both the width of the depletion region and the height of the potential barrier at the KNN/LNO interface. By controlling the domain configurations using the writing voltage, the rectifying behaviors can be regulated and immediate states can be tuned. Our work shows the potential applications of KNN films in ferroelectric memristors.

  20. General Considerations of the Electrostatic Boundary Conditions in Oxide Heterostructures

    SciTech Connect

    Higuchi, Takuya

    2011-08-19

    different families creates a host of electrostatic issues. They can be somewhat avoided if, as in many semiconductor heterostructures, only one family is used, with small perturbations (such as n-type or p-type doping) around them. However, for most transition metal oxides, this is greatly restrictive. For example, LaMnO{sub 3} and SrMnO{sub 3} are both insulators in part due to strong electron correlations, and only in their solid solution does 'colossal magnetoresistance' emerge in bulk. Similarly, the metallic superlattice shown in Fig. 1(c) can be considered a nanoscale deconstruction of (La,Sr)TiO{sub 3} to the insulating parent compounds. Therefore the aspiration to arbitrarily mix and match perovskite components requires a basic understanding of, and ultimately control over, these issues. In this context, here we present basic electrostatic features that arise in oxide heterostructures which vary the ionic charge stacking sequence. In close relation to the analysis of the stability of polar surfaces and semiconductor heterointerfaces, the variation of the dipole moment across a heterointerface plays a key role in determining its stability. Different self-consistent assignments of the unit cell are presented, allowing the polar discontinuity picture to be recast in terms of an equivalent local charge neutrality picture. The latter is helpful in providing a common framework with which to discuss electronic reconstructions, local-bonding considerations, crystalline defects, and lattice polarization on an equal footing, all of which are the subject of extensive current investigation.

  1. In-situ Electric Field-Induced Modulation of Photoluminescence in Pr-doped Ba0.85Ca0.15Ti0.90Zr0.10O3 Lead-Free Ceramics

    PubMed Central

    Sun, Hai Ling; Wu, Xiao; Chung, Tat Hang; Kwok, K. W.

    2016-01-01

    Luminescent materials with dynamic photoluminescence activity have aroused special interest because of their potential widespread applications. One proposed approach of directly and reversibly modulating the photoluminescence emissions is by means of introducing an external electric field in an in-situ and real-time way, which has only been focused on thin films. In this work, we demonstrate that real-time electric field-induced photoluminescence modulation can be realized in a bulk Ba0.85Ca0.15Ti0.90Zr0.10O3 ferroelectric ceramic doped with 0.2 mol% Pr3+, owing to its remarkable polarization reversal and phase evolution near the morphotropic phase boundary. Along with in-situ X-ray diffraction analysis, our results reveal that an applied electric field induces not only typical polarization switching and minor crystal deformation, but also tetragonal-to-rhombohedral phase transformation of the ceramic. The electric field-induced phase transformation is irreversible and engenders dominant effect on photoluminescence emissions as a result of an increase in structural symmetry. After it is completed in a few cycles of electric field, the photoluminescence emissions become governed mainly by the polarization switching, and thus vary reversibly with the modulating electric field. Our results open a promising avenue towards the realization of bulk ceramic-based tunable photoluminescence activity with high repeatability, flexible controllability, and environmental-friendly chemical process. PMID:27339815

  2. In-situ Electric Field-Induced Modulation of Photoluminescence in Pr-doped Ba0.85Ca0.15Ti0.90Zr0.10O3 Lead-Free Ceramics

    NASA Astrophysics Data System (ADS)

    Sun, Hai Ling; Wu, Xiao; Chung, Tat Hang; Kwok, K. W.

    2016-06-01

    Luminescent materials with dynamic photoluminescence activity have aroused special interest because of their potential widespread applications. One proposed approach of directly and reversibly modulating the photoluminescence emissions is by means of introducing an external electric field in an in-situ and real-time way, which has only been focused on thin films. In this work, we demonstrate that real-time electric field-induced photoluminescence modulation can be realized in a bulk Ba0.85Ca0.15Ti0.90Zr0.10O3 ferroelectric ceramic doped with 0.2 mol% Pr3+, owing to its remarkable polarization reversal and phase evolution near the morphotropic phase boundary. Along with in-situ X-ray diffraction analysis, our results reveal that an applied electric field induces not only typical polarization switching and minor crystal deformation, but also tetragonal-to-rhombohedral phase transformation of the ceramic. The electric field-induced phase transformation is irreversible and engenders dominant effect on photoluminescence emissions as a result of an increase in structural symmetry. After it is completed in a few cycles of electric field, the photoluminescence emissions become governed mainly by the polarization switching, and thus vary reversibly with the modulating electric field. Our results open a promising avenue towards the realization of bulk ceramic-based tunable photoluminescence activity with high repeatability, flexible controllability, and environmental-friendly chemical process.

  3. In-situ Electric Field-Induced Modulation of Photoluminescence in Pr-doped Ba0.85Ca0.15Ti0.90Zr0.10O3 Lead-Free Ceramics.

    PubMed

    Sun, Hai Ling; Wu, Xiao; Chung, Tat Hang; Kwok, K W

    2016-06-24

    Luminescent materials with dynamic photoluminescence activity have aroused special interest because of their potential widespread applications. One proposed approach of directly and reversibly modulating the photoluminescence emissions is by means of introducing an external electric field in an in-situ and real-time way, which has only been focused on thin films. In this work, we demonstrate that real-time electric field-induced photoluminescence modulation can be realized in a bulk Ba0.85Ca0.15Ti0.90Zr0.10O3 ferroelectric ceramic doped with 0.2 mol% Pr(3+), owing to its remarkable polarization reversal and phase evolution near the morphotropic phase boundary. Along with in-situ X-ray diffraction analysis, our results reveal that an applied electric field induces not only typical polarization switching and minor crystal deformation, but also tetragonal-to-rhombohedral phase transformation of the ceramic. The electric field-induced phase transformation is irreversible and engenders dominant effect on photoluminescence emissions as a result of an increase in structural symmetry. After it is completed in a few cycles of electric field, the photoluminescence emissions become governed mainly by the polarization switching, and thus vary reversibly with the modulating electric field. Our results open a promising avenue towards the realization of bulk ceramic-based tunable photoluminescence activity with high repeatability, flexible controllability, and environmental-friendly chemical process.

  4. Manipulable wave-vector filtering in a δ-doped magnetic-barrier nanostructure

    NASA Astrophysics Data System (ADS)

    Liu, Yu; Zhang, Lan-Lan; Lu, Mao-Wang; Zhou, Yong-Long; Li, Fei

    2017-03-01

    We theoretically explore the control of the wave-vector filtering (WVF) effect in a realistic magnetic-barrier nanostructure with a δ -doping, which can be experimentally realized by depositing a ferromagnetic stripe on the top of a GaAs /AlxGa1-x As heterostructure. It is shown that an obvious WVF effect still exists when a δ-doping is introduced into the device. It is also shown that the degree of the WVF effect can be controlled by tuning the weight and/or the position of the δ-doping.

  5. Growth and electrical characterization of Al0.24Ga0.76As/AlxGa1-xAs/Al0.24Ga0.76As modulation-doped quantum wells with extremely low x

    NASA Astrophysics Data System (ADS)

    Gardner, Geoffrey C.; Watson, John D.; Mondal, Sumit; Deng, Nianpei; Csáthy, Gabor A.; Manfra, Michael J.

    2013-06-01

    We report on the growth and electrical characterization of modulation-doped Al0.24Ga0.76As/AlxGa1-xAs/Al0.24Ga0.76As quantum wells with mole fractions as low as x = 0.00057. Such structures will permit detailed studies of the impact of alloy disorder in the fractional quantum Hall regime. At zero magnetic field, we extract an alloy scattering rate of 24 ns-1 per%Al. Additionally, we find that for x as low as 0.00057 in the quantum well, alloy scattering becomes the dominant mobility-limiting scattering mechanism in ultra-high purity two-dimensional electron gases typically used to study the fragile ν = 5/2 and ν = 12/5 fractional quantum Hall states.

  6. Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes

    SciTech Connect

    Mehnke, Frank Kuhn, Christian; Stellmach, Joachim; Rothe, Mark-Antonius; Reich, Christoph; Ledentsov, Nikolay; Pristovsek, Markus; Wernicke, Tim; Kolbe, Tim; Lobo-Ploch, Neysha; Rass, Jens; Kneissl, Michael

    2015-05-21

    The effects of the heterostructure design on the injection efficiency and external quantum efficiency of ultraviolet (UV)-B light emitting diodes (LEDs) have been investigated. It was found that the functionality of the Al{sub x}Ga{sub 1−x}N:Mg electron blocking layer is strongly influenced by its aluminum mole fraction x and its magnesium doping profile. By comparing LED electroluminescence, quantum well photoluminescence, and simulations of LED heterostructure, we were able to differentiate the contributions of injection efficiency and internal quantum efficiency to the external quantum efficiency of UV LEDs. For the optimized heterostructure using an Al{sub 0.7}Ga{sub 0.3}N:Mg electron blocking layer with a Mg to group III ratio of 4% in the gas phase the electron leakage currents are suppressed without blocking the injection of holes into the multiple quantum well active region. Flip chip mounted LED chips have been processed achieving a maximum output power of 3.5 mW at 290 mA and a peak external quantum efficiency of 0.54% at 30 mA.

  7. Direct observation of interlayer hybridization and Dirac relativistic carriers in graphene/MoS₂ van der Waals heterostructures.

    PubMed

    Diaz, Horacio Coy; Avila, José; Chen, Chaoyu; Addou, Rafik; Asensio, Maria C; Batzill, Matthias

    2015-02-11

    Artificial heterostructures assembled from van der Waals materials promise to combine materials without the traditional restrictions in heterostructure-growth such as lattice matching conditions and atom interdiffusion. Simple stacking of van der Waals materials with diverse properties would thus enable the fabrication of novel materials or device structures with atomically precise interfaces. Because covalent bonding in these layered materials is limited to molecular planes and the interaction between planes are very weak, only small changes in the electronic structure are expected by stacking these materials on top of each other. Here we prepare interfaces between CVD-grown graphene and MoS2 and report the direct measurement of the electronic structure of such a van der Waals heterostructure by angle-resolved photoemission spectroscopy. While the Dirac cone of graphene remains intact and no significant charge transfer doping is detected, we observe formation of band gaps in the π-band of graphene, away from the Fermi-level, due to hybridization with states from the MoS2 substrate.

  8. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices

    NASA Astrophysics Data System (ADS)

    Logoteta, Demetrio; Fiori, Gianluca; Iannaccone, Giuseppe

    2014-10-01

    We investigate the intrinsic performance of vertical and lateral graphene-based heterostructure field-effect transistors, currently considered the most promising options to exploit graphene properties in post-CMOS electronics. We focus on three recently proposed graphene-based transistors, that in experiments have exhibited large current modulation. Our analysis is based on device simulations including the self-consistent solution of the electrostatic and transport equations within the Non-Equilibrium Green's Function formalism. We show that the lateral heterostructure transistor has the potential to outperform CMOS technology and to meet the requirements of the International Technology Roadmap for Semiconductors for the next generation of semiconductor integrated circuits. On the other hand, we find that vertical heterostructure transistors miss these performance targets by several orders of magnitude, both in terms of switching frequency and delay time, due to large intrinsic capacitances, and unavoidable current/capacitance tradeoffs.

  9. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices

    PubMed Central

    Logoteta, Demetrio; Fiori, Gianluca; Iannaccone, Giuseppe

    2014-01-01

    We investigate the intrinsic performance of vertical and lateral graphene-based heterostructure field-effect transistors, currently considered the most promising options to exploit graphene properties in post-CMOS electronics. We focus on three recently proposed graphene-based transistors, that in experiments have exhibited large current modulation. Our analysis is based on device simulations including the self-consistent solution of the electrostatic and transport equations within the Non-Equilibrium Green's Function formalism. We show that the lateral heterostructure transistor has the potential to outperform CMOS technology and to meet the requirements of the International Technology Roadmap for Semiconductors for the next generation of semiconductor integrated circuits. On the other hand, we find that vertical heterostructure transistors miss these performance targets by several orders of magnitude, both in terms of switching frequency and delay time, due to large intrinsic capacitances, and unavoidable current/capacitance tradeoffs. PMID:25328156

  10. Transparent conducting oxides: A -doped superlattice approach

    SciTech Connect

    Cooper, Valentino R; Seo, Sung Seok A.; Lee, Suyoun; Kim, Jun Sung; Choi, Woo Seok; Okamoto, Satoshi; Lee, Ho Nyung

    2014-01-01

    Two-dimensional electron gases (2DEGs) at the interface of oxide heterostructures have been the subject of recent experiment and theory, due to the intriguing phenomena that occur in confined electronic states. However, while much has been done to understand the origin of 2DEGs and related phenomena, very little has been explored with regards to the control of conduction pathways and the distribution of charge carriers. Using first principles simulations and experimental thin film synthesis methods, we examine the effect of dimensionality on carrier transport in La delta-doped SrTiO3 (STO) superlattices, as a function of the thickness of the insulating STO spacer. Our computed Fermi surfaces and layer-resolved carrier density proles demonstrate that there is a critical thickness of the STO spacer, below which carrier transport is dominated by three-dimensional conduction of interface charges arising from appreciable overlap of the quantum mechanical wavefunctions between neighboring delta-doped layers. We observe that, experimentally, these superlattices remain highly transparent to visible light. Band structure calculations indicate that this is a result of the appropriately large gap between the O 2p and Ti d states. The tunability of the quantum mechanical wavefunctions and the optical transparency highlight the potential for using oxide heterostructures in novel opto-electronic devices; thus providing a route to the creation of novel transparent conducting oxides.

  11. One-dimensional Si/Ge nanowires and their heterostructures for multifunctional applications—a review

    NASA Astrophysics Data System (ADS)

    Ray, Samit K.; Katiyar, Ajit K.; Raychaudhuri, Arup K.

    2017-03-01

    Remarkable progress has been made in the field of one-dimensional semiconductor nanostructures for electronic and photonic devices. Group-IV semiconductors and their heterostructures have dominated the years of success in microelectronic industry. However their use in photonic devices is limited since they exhibit poor optical activity due to indirect band gap nature of Si and Ge. Reducing their dimensions below a characteristic length scale of various fundamental parameters like exciton Bohr radius, phonon mean free path, critical size of magnetic domains, exciton diffusion length etc result in the significant modification of bulk properties. In particular, light emission from Si/Ge nanowires due to quantum confinement, strain induced band structure modification and impurity doping may lead to the integration of photonic components with mature silicon CMOS technology in near future. Several promising applications based on Si and Ge nanowires have already been well established and studied, while others are now at the early demonstration stage. The control over various forms of energy and carrier transport through the unconstrained dimension makes Si and Ge nanowires a promising platform to manufacture advanced solid-state devices. This review presents the progress of the research with emphasis on their potential application of Si/Ge nanowires and their heterostructures for electronic, photonic, sensing and energy devices.

  12. Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion

    NASA Astrophysics Data System (ADS)

    Sung Park, Pil; Reddy, Kongara M.; Nath, Digbijoy N.; Yang, Zhichao; Padture, Nitin P.; Rajan, Siddharth

    2013-04-01

    A simple method for the creation of Ohmic contact to 2D electron gas in AlGaN/GaN high electron-mobility transistors using Cr/graphene layer is demonstrated. A weak temperature dependence of this Ohmic contact observed in the range 77 to 300 K precludes thermionic emission or trap-assisted hopping as possible carrier-transport mechanisms. It is suggested that the Cr/graphene combination acts akin to a doped n-type semiconductor in contact with AlGaN/GaN heterostructure, and promotes carrier transport along percolating Al-lean paths through the AlGaN layer. This use of graphene offers a simple method for making Ohmic contacts to AlGaN/GaN heterostructures, circumventing complex additional processing steps involving high temperatures. These results could have important implications for the fabrication and manufacturing of AlGaN/GaN-based microelectronic and optoelectronic devices/sensors of the future.

  13. One-dimensional Si/Ge nanowires and their heterostructures for multifunctional applications-a review.

    PubMed

    Ray, Samit K; Katiyar, Ajit K; Raychaudhuri, Arup K

    2017-03-03

    Remarkable progress has been made in the field of one-dimensional semiconductor nanostructures for electronic and photonic devices. Group-IV semiconductors and their heterostructures have dominated the years of success in microelectronic industry. However their use in photonic devices is limited since they exhibit poor optical activity due to indirect band gap nature of Si and Ge. Reducing their dimensions below a characteristic length scale of various fundamental parameters like exciton Bohr radius, phonon mean free path, critical size of magnetic domains, exciton diffusion length etc result in the significant modification of bulk properties. In particular, light emission from Si/Ge nanowires due to quantum confinement, strain induced band structure modification and impurity doping may lead to the integration of photonic components with mature silicon CMOS technology in near future. Several promising applications based on Si and Ge nanowires have already been well established and studied, while others are now at the early demonstration stage. The control over various forms of energy and carrier transport through the unconstrained dimension makes Si and Ge nanowires a promising platform to manufacture advanced solid-state devices. This review presents the progress of the research with emphasis on their potential application of Si/Ge nanowires and their heterostructures for electronic, photonic, sensing and energy devices.

  14. Microstructure of (Ga,Mn)As/GaAs digital ferromagnetic heterostructures

    NASA Astrophysics Data System (ADS)

    Kong, X.; Trampert, A.; Guo, X. X.; Kolovos-Vellianitis, D.; Däweritz, L.; Ploog, K. H.

    2005-05-01

    We report on the microstructure of (Ga,Mn)As digital ferromagnetic heterostructures grown on GaAs (001) substrates by low-temperature molecular-beam epitaxy. The Mn concentration and the As4/Ga beam equivalent pressure (BEP) ratio are varied in the samples containing periods of Mn sheets separated by thin GaAs spacer layers. Transmission electron microscopy studies reveal that decreasing the Mn doping concentration and reducing the BEP ratio lead to smaller composition fluctuations of Mn and more homogeneous (Ga,Mn)As layers with abrupt interfaces. Planar defects are found as the dominant defect in these heterostructures and their density is related to the magnitude of the composition fluctuation. These defects show a noticeable anisotropy in the morphologic distribution parallel to the orthogonal [110] and [11¯0] direction. Along the [11¯0] direction, they are stacking faults, which are preferentially formed in V-shaped pairs and nucleate at the interfaces between (Ga,Mn)As and GaAs layers. Along the [110] direction, the planar defects are isolated thin twin lamellae. The character of the planar defects and their configuration are analyzed in detail.

  15. Microstructure of (Ga,Mn)As/GaAs digital ferromagnetic heterostructures

    SciTech Connect

    Kong, X.; Trampert, A.; Guo, X.X.; Kolovos-Vellianitis, D.; Daeweritz, L.; Ploog, K.H.

    2005-05-01

    We report on the microstructure of (Ga,Mn)As digital ferromagnetic heterostructures grown on GaAs (001) substrates by low-temperature molecular-beam epitaxy. The Mn concentration and the As{sub 4}/Ga beam equivalent pressure (BEP) ratio are varied in the samples containing periods of Mn sheets separated by thin GaAs spacer layers. Transmission electron microscopy studies reveal that decreasing the Mn doping concentration and reducing the BEP ratio lead to smaller composition fluctuations of Mn and more homogeneous (Ga,Mn)As layers with abrupt interfaces. Planar defects are found as the dominant defect in these heterostructures and their density is related to the magnitude of the composition fluctuation. These defects show a noticeable anisotropy in the morphologic distribution parallel to the orthogonal [110] and [110] direction. Along the [110] direction, they are stacking faults, which are preferentially formed in V-shaped pairs and nucleate at the interfaces between (Ga,Mn)As and GaAs layers. Along the [110] direction, the planar defects are isolated thin twin lamellae. The character of the planar defects and their configuration are analyzed in detail.

  16. Factors Influencing Photoluminescence and Photocarrier Lifetime in CdSeTe/CdMgTe Double Heterostructures

    SciTech Connect

    Swartz, C. H.; Zaunbrecher, Katherine N.; Sohal, S.; LeBlanc, E. G.; Edirisooriya, M.; Ogedengbe, O. S.; Petersen, J. E.; Jayathilaka, P. A. R. D.; Myers, T. H.; Holtz, M. W.; Barnes, Teresa M.

    2016-10-28

    CdSeTe/CdMgTe double heterostructures were produced with both n-type and unintentionally doped absorber layers. Measurements of the dependence of photoluminescence intensity on excitation intensity were carried out, as well as measurements of time-resolved photoluminescence decay after an excitation pulse. It was found that decay times under very low photon injection conditions are dominated by a non-radiative Shockley-Read-Hall process described using a recombination center with an asymmetric capture cross section, where the cross section for holes is larger than that for electrons. As a result of the asymmetry, the center effectively extends photoluminescence decay by a hole trapping phenomenon. A reduction in electron capture cross section appeared at doping densities over 10^16cm-3. An analysis of the excitation intensity dependence of room temperature photoluminescence revealed a strong relationship with doping concentration. This allows estimates of the carrier concentration to be made through a non-destructive optical method. Iodine was found to be an effective n-type dopant for CdTe, allowing controllable carrier concentrations without an increased rate of non-radiative recombination.

  17. Factors influencing photoluminescence and photocarrier lifetime in CdSeTe/CdMgTe double heterostructures

    NASA Astrophysics Data System (ADS)

    Swartz, C. H.; Zaunbrecher, K. N.; Sohal, S.; LeBlanc, E. G.; Edirisooriya, M.; Ogedengbe, O. S.; Petersen, J. E.; Jayathilaka, P. A. R. D.; Myers, T. H.; Holtz, M. W.; Barnes, T. M.

    2016-10-01

    CdSeTe/CdMgTe double heterostructures were produced with both n-type and unintentionally doped absorber layers. Measurements of the dependence of photoluminescence intensity on excitation intensity were carried out, as well as measurements of time-resolved photoluminescence decay after an excitation pulse. It was found that decay times under very low photon injection conditions are dominated by a non-radiative Shockley-Read-Hall process described using a recombination center with an asymmetric capture cross section, where the cross section for holes is larger than that for electrons. As a result of the asymmetry, the center effectively extends photoluminescence decay by a hole trapping phenomenon. A reduction in electron capture cross section appeared at doping densities over 1016cm-3. An analysis of the excitation intensity dependence of room temperature photoluminescence revealed a strong relationship with doping concentration. This allows estimates of the carrier concentration to be made through a non-destructive optical method. Iodine was found to be an effective n-type dopant for CdTe, allowing controllable carrier concentrations without an increased rate of non-radiative recombination.

  18. Trilayer TMDC Heterostructures for MOSFETs and Nanobiosensors

    NASA Astrophysics Data System (ADS)

    Datta, Kanak; Shadman, Abir; Rahman, Ehsanur; Khosru, Quazi D. M.

    2017-02-01

    Two dimensional materials such as transition metal dichalcogenides (TMDC) and their bi-layer/tri-layer heterostructures have become the focus of intense research and investigation in recent years due to their promising applications in electronics and optoelectronics. In this work, we have explored device level performance of trilayer TMDC heterostructure (MoS2/MX2/MoS2; M = Mo or, W and X = S or, Se) metal oxide semiconductor field effect transistors (MOSFETs) in the quantum ballistic regime. Our simulation shows that device `on' current can be improved by inserting a WS2 monolayer between two MoS2 monolayers. Application of biaxial tensile strain reveals a reduction in drain current which can be attributed to the lowering of carrier effective mass with increased tensile strain. In addition, it is found that gate underlap geometry improves electrostatic device performance by improving sub-threshold swing. However, increase in channel resistance reduces drain current. Besides exploring the prospect of these materials in device performance, novel trilayer TMDC heterostructure double gate field effect transistors (FETs) are proposed for sensing Nano biomolecules as well as for pH sensing. Bottom gate operation ensures these FETs operating beyond Nernst limit of 59 mV/pH. Simulation results found in this work reveal that scaling of bottom gate oxide results in better sensitivity while top oxide scaling exhibits an opposite trend. It is also found that, for identical operating conditions, proposed TMDC FET pH sensors show super-Nernst sensitivity indicating these materials as potential candidates in implementing such sensor. Besides pH sensing, all these materials show high sensitivity in the sub-threshold region as a channel material in nanobiosensor while MoS2/WS2/MoS2 FET shows the least sensitivity among them.

  19. van der Waals Heterostructures Grown by MBE

    NASA Astrophysics Data System (ADS)

    Hinkle, Christopher

    In this work, we demonstrate the high-quality MBE heterostructure growth of various layered 2D materials by van der Waals epitaxy (VDWE). The coupling of different types of van der Waals materials including transition metal dichalcogenide thin films (e.g., WSe2, WTe2, HfSe2) , insulating hexagonal boron nitride (h-BN), and topological insulators (e.g., Bi2Se3) allows for the fabrication of novel electronic devices that take advantage of unique quantum confinement and spin-based characteristics. The relaxed lattice-matching criteria of van der Waals epitaxy has allowed for high-quality heterostructure growth with atomically abrupt interfaces, allowing us to couple these materials based primarily on their band alignment and electronic properties. We will discuss the impact of sample preparation, surface reactivity, and lattice mismatch of various substrates (sapphire, graphene, TMDs, Bi2Se3) on the growth mode and quality of the films and will discuss our studies of substrate temperature and flux rates on the resultant growth and grain size. Structural and chemical characterization was conducted via reflection high energy electron diffraction (RHEED, X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning tunneling microscopy/spectroscopy (STM/S), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Experimentally determined band alignments have been determined and compared with first-principles calculations allowing the design of novel low-power logic and magnetic memory devices. Initial results from the electrical characterization of these grown thin films and some simple devices will also be presented. These VDWE grown layered 2D materials show significant potential for fabricating novel heterostructures with tunable band alignments and magnetic properties for a variety of nanoelectronic and optoelectronic applications.

  20. Electrical properties of the InP/InGaAs pnp heterostructure-emitter bipolar transistor

    SciTech Connect

    Tsai, J. H. Liu, W. Ch.; Guo, D. F.; Kang, Y. Ch.; Chiu, Sh. Y.; Lour, W. Sh.

    2008-03-15

    The dc performances of an InP/InGaAs pnp heterostructure-emitter bipolar transistor are investigated by theoretical analysis and experimental results. Though the valence band discontinuity at the InP/InGaAs heterojunction is relatively large, the addition of a heavily-doped as well as thin p{sup +}-InGaAs emitter layer between p-InP confinement and n{sup +}-InGaAs base layers effectively eliminates the potential spike at emitter-base junction and simultaneously lowers the emitter-collector offset voltage and increases the potential barrier for electrons. Experimentally, a high current gain of 88 and a low offset voltage of 54 mV have been achieved.

  1. Evidence of impurity assisted tunneling in SiGe/Si heterostructures

    SciTech Connect

    Zhukavin, R. Kh.; Bekin, N. A.; Lobanov, D. N.; Drozdov, M. N.; Drozdov, Yu. N.; Kozlov, D. V.; Pryakhin, D. A.; Shastin, V. N.; Shengurov, V. G.

    2013-12-04

    The investigation of vertical transport in delta-doped SiGe/Si heterostructures has been presented. The asymmetrical triple barrier structure was grown by MBE technique. The delta layer of boron impurity was placed into the center of narrower quantum well. The growth procedure was followed by conventional processing including photolithography and plasma etching and magnetron sputtering. SIMS and X-rays diagnostics have been used to control the desired structure. The conductance of the structure has been measured at liquid helium temperature and analyzed. All pronounced resonances have been identified. The resonant feature near 60 mV has to be attributed to impurity-assisted tunneling that is supported by calculation of binding energy of the acceptor in the narrower quantum well.

  2. Self-acousto-optic modulation and orthogonality violation in the transverse modes of a broad-area Nd-doped yttrium-aluminum-garnet single-shot laser

    SciTech Connect

    Soler Rus, M. Odin; Cabrera-Granado, E.; Guerra Perez, J. M.

    2011-05-15

    Self-acousto-optic Raman-Nath modulation and nonorthogonal transversal modes are found in a broad-area Nd:YAG single-shot laser. The device is free from the thermal-induced effects previously related to orthogonality violation and the acousto-optic modulation comes from a shock wave produced by the discharge of the flash lamps that optically pump the laser. The experimental findings are reproduced by a general model of a class B laser.

  3. Advanced heterostructure transistor technologies for wireless communications

    NASA Astrophysics Data System (ADS)

    Wang, N.-L. Larry; Lin, Barry; Chau, Frank H.-F.; Jackson, Gordon; Chen, Zhengming; Lee, C. P.

    1999-08-01

    Wireless communication has enjoyed tremendous growth in the last five years. Most of the market is below the 3 GHz. Recently, millimeter wave frequency band was also opened up to commercial applications, such as the Local Multipoint Distribution System. The rapid growth of the market demands cost effective RF circuitry with ever better performance. Thus, the heterostructure transistors are pursued to meeting the market needs. This article will first analyze the technical demand on RF transistor circuitry for wireless application. Existing and emerging transistor technologies will be discussed for its strength. A general comparison will be made.

  4. Transmission in graphene-topological insulator heterostructures

    NASA Astrophysics Data System (ADS)

    De Beule, C.; Zarenia, M.; Partoens, B.

    2017-03-01

    We investigate scattering of the topological surface state of a three-dimensional time-reversal invariant topological insulator when graphene is deposited on the topological-insulator surface. Specifically, we consider the (111) surface of a Bi2Se3 -like topological insulator. We present a low-energy model for the graphene-topological insulator heterostructure and we calculate the transmission probability at zigzag and armchair edges of the deposited graphene, and the conductance through graphene nanoribbon barriers, and show that its features can be understood from antiresonances in the transmission probability.

  5. Magnetoelectroluminescence of organic heterostructures: Analytical theory and spectrally resolved measurements

    SciTech Connect

    Liu, Feilong; Kelley, Megan R.; Crooker, Scott A.; Nie, Wanyi; Mohite, Aditya D.; Ruden, P. Paul; Smith, Darryl L.

    2014-12-22

    The effect of a magnetic field on the electroluminescence of organic light emitting devices originates from the hyperfine interaction between the electron/hole polarons and the hydrogen nuclei of the host molecules. In this paper, we present an analytical theory of magnetoelectroluminescence for organic semiconductors. To be specific, we focus on bilayer heterostructure devices. In the case we are considering, light generation at the interface of the donor and acceptor layers results from the formation and recombination of exciplexes. The spin physics is described by a stochastic Liouville equation for the electron/hole spin density matrix. By finding the steady-state analytical solution using Bloch-Wangsness-Redfield theory, we explore how the singlet/triplet exciplex ratio is affected by the hyperfine interaction strength and by the external magnetic field. In order to validate the theory, spectrally resolved electroluminescence experiments on BPhen/m-MTDATA devices are analyzed. With increasing emission wavelength, the width of the magnetic field modulation curve of the electroluminescence increases while its depth decreases. Furthermore, these observations are consistent with the model.

  6. Magnetoelectroluminescence of organic heterostructures: Analytical theory and spectrally resolved measurements

    DOE PAGES

    Liu, Feilong; Kelley, Megan R.; Crooker, Scott A.; ...

    2014-12-22

    The effect of a magnetic field on the electroluminescence of organic light emitting devices originates from the hyperfine interaction between the electron/hole polarons and the hydrogen nuclei of the host molecules. In this paper, we present an analytical theory of magnetoelectroluminescence for organic semiconductors. To be specific, we focus on bilayer heterostructure devices. In the case we are considering, light generation at the interface of the donor and acceptor layers results from the formation and recombination of exciplexes. The spin physics is described by a stochastic Liouville equation for the electron/hole spin density matrix. By finding the steady-state analytical solutionmore » using Bloch-Wangsness-Redfield theory, we explore how the singlet/triplet exciplex ratio is affected by the hyperfine interaction strength and by the external magnetic field. In order to validate the theory, spectrally resolved electroluminescence experiments on BPhen/m-MTDATA devices are analyzed. With increasing emission wavelength, the width of the magnetic field modulation curve of the electroluminescence increases while its depth decreases. Furthermore, these observations are consistent with the model.« less

  7. Magnetoelectroluminescence of organic heterostructures: Analytical theory and spectrally resolved measurements

    NASA Astrophysics Data System (ADS)

    Liu, Feilong; Kelley, Megan R.; Crooker, Scott A.; Nie, Wanyi; Mohite, Aditya D.; Ruden, P. Paul; Smith, Darryl L.

    2014-12-01

    The effect of a magnetic field on the electroluminescence of organic light emitting devices originates from the hyperfine interaction between the electron/hole polarons and the hydrogen nuclei of the host molecules. In this paper, we present an analytical theory of magnetoelectroluminescence for organic semiconductors. To be specific, we focus on bilayer heterostructure devices. In the case we are considering, light generation at the interface of the donor and acceptor layers results from the formation and recombination of exciplexes. The spin physics is described by a stochastic Liouville equation for the electron/hole spin density matrix. By finding the steady-state analytical solution using Bloch-Wangsness-Redfield theory, we explore how the singlet/triplet exciplex ratio is affected by the hyperfine interaction strength and by the external magnetic field. To validate the theory, spectrally resolved electroluminescence experiments on BPhen/m-MTDATA devices are analyzed. With increasing emission wavelength, the width of the magnetic field modulation curve of the electroluminescence increases while its depth decreases. These observations are consistent with the model.

  8. Graphene-Boron Nitride Heterostructure Based Optoelectronic Devices for On-Chip Optical Interconnects

    NASA Astrophysics Data System (ADS)

    Gao, Yuanda

    Graphene has emerged as an appealing material for a variety of optoelectronic applications due to its unique electrical and optical characteristics. In this thesis, I will present recent advances in integrating graphene and graphene-boron nitride (BN) heterostructures with confined optical architectures, e.g. planar photonic crystal (PPC) nanocavities and silicon channel waveguides, to make this otherwise weakly absorbing material optically opaque. Based on these integrations, I will further demonstrate the resulting chip-integrated optoelectronic devices for optical interconnects. After transferring a layer of graphene onto PPC nanocavities, spectral selectivity at the resonance frequency and orders-of-magnitude enhancement of optical coupling with graphene have been observed in infrared spectrum. By applying electrostatic potential to graphene, electro-optic modulation of the cavity reflection is possible with contrast in excess of 10 dB. And furthermore, a novel and complex modulator device structure based on the cavity-coupled and BN-encapsulated dual-layer graphene capacitor is demonstrated to operate at a speed of 1.2 GHz. On the other hand, an enhanced broad-spectrum light-graphene interaction coupled with silicon channel waveguides is also demonstrated with ?0.1 dB/?m transmission attenuation due to graphene absorption. A waveguide-integrated graphene photodetector is fabricated and shown 0.1 A/W photoresponsivity and 20 GHz operation speed. An improved version of a similar photodetector using graphene-BN heterostructure exhibits 0.36 A/W photoresponsivity and 42 GHz response speed. The integration of graphene and graphene-BN heterostructures with nanophotonic architectures promises a new generation of compact, energy-efficient, high-speed optoelectronic device concepts for on-chip optical communications that are not yet feasible or very difficult to realize using traditional bulk semiconductors.

  9. Biomarker monitoring in sports doping control.

    PubMed

    Pottgiesser, Torben; Schumacher, Yorck Olaf

    2012-06-01

    Biomarker monitoring can be considered a new era in the effort against doping. Opposed to the old concept in doping control of direct detection of a prohibited substance in a biological sample such as urine or blood, the new paradigm allows a personalized longitudinal monitoring of biomarkers that indicate non-physiological responses independently of the used doping technique or substance, and may cause sanctioning of illicit practices. This review presents the development of biomarker monitoring in sports doping control and focuses on the implementation of the Athlete Biological Passport as the current concept of the World Anti Doping Agency for the detection of blood doping (hematological module). The scope of the article extends to the description of novel biomarkers and future concepts of application.

  10. In Situ TEM Study of Reversible and Irreversible Electroforming in Pt/Ti:NiO/Pt Heterostructures

    SciTech Connect

    D'Aquila, Kenneth; Liu, Yuzi; Iddir, Hakim; Petford-Long, Amanda K.

    2015-05-01

    Experimental verification of the microscopic origin of resistance switching in metal/oxide/metal heterostructures is needed for applications in non-volatile memory and neuromorphic computing. Numerous reports suggest that resistance switching in NiO is caused by local reduction of the oxide layer into nanoscale conducting filaments, but few reports have shown experimental evidence correlating electroforming with site-specific changes in composition. We have investigated the mechanisms of reversible and irreversible electroforming in 250–500 nm wide pillars patterned from a single Ta/Ti/Pt/Ti-doped NiO/Pt/Ta heterostructure and have shown that these can coexist within a single sample. We performed in situ transmission electron microscopy (TEM) electroform- ing and switching on each pillar to correlate the local electron transport behavior with microstructure and composition in each pillar. DFT calculations fitted to electron energy loss spectroscopy data showed that the Ti-doped NiO layer is partially reduced after reversible electroforming, with the formation of oxygen vacancies ordered into lines in the <110> direction. However, under the same probing conditions, adjacent pillars show irreversible electroforming caused by electromigration of metallic Ta to form a single bridge across the oxide layer. We propose that the different electroforming behaviors are related to microstructural variations across the sample and may lead to switching variability.

  11. Thermally induced currents in graphene-based heterostructure

    NASA Astrophysics Data System (ADS)

    Zeng, Minggang; Feng, Yuanping; Liang, Gengchiau

    2011-09-01

    We investigate thermally induced currents in a zigzag graphene nanoribbon (ZGNR) heterostructure, consisting of hydrogen-terminated ZGNR (ZGNR-H) and oxygen-terminated ZGNR (ZGNR-O), under different electronic and magnetic states. Compared to a pure ZGNR-H system, the heterostructure displays a considerably larger thermally induced current due to its asymmetric transmission spectrum. Moreover, the magnetized ZGNR-H/ZGNR-O shows spin filter and magnetoresistance effects, suggesting potential applications of the ZGNR-H/ZGNR-O heterostructures in thermoelectric and spintronics devices.

  12. Electronic structure of transferred graphene/h-BN van der Waals heterostructures with nonzero stacking angles by nano-ARPES

    NASA Astrophysics Data System (ADS)

    Wang, Eryin; Chen, Guorui; Wan, Guoliang; Lu, Xiaobo; Chen, Chaoyu; Avila, Jose; Fedorov, Alexei V.; Zhang, Guangyu; Asensio, Maria C.; Zhang, Yuanbo; Zhou, Shuyun

    2016-11-01

    In van der Waals heterostructures, the periodic potential from the Moiré superlattice can be used as a control knob to modulate the electronic structure of the constituent materials. Here we present a nanoscale angle-resolved photoemission spectroscopy (nano-ARPES) study of transferred graphene/h-BN heterostructures with two different stacking angles of 2.4° and 4.3° respectively. Our measurements reveal six replicas of graphene Dirac cones at the superlattice Brillouin zone (SBZ) centers. The size of the SBZ and its relative rotation angle to the graphene BZ are in good agreement with Moiré superlattice period extracted from atomic force microscopy (AFM) measurements. Comparison to the epitaxial graphene/h-BN with 0° stacking angles suggests that the interaction between graphene and h-BN decreases with increasing stacking angle.

  13. 2D materials and van der Waals heterostructures.

    PubMed

    Novoselov, K S; Mishchenko, A; Carvalho, A; Castro Neto, A H

    2016-07-29

    The physics of two-dimensional (2D) materials and heterostructures based on such crystals has been developing extremely fast. With these new materials, truly 2D physics has begun to appear (for instance, the absence of long-range order, 2D excitons, commensurate-incommensurate transition, etc.). Novel heterostructure devices--such as tunneling transistors, resonant tunneling diodes, and light-emitting diodes--are also starting to emerge. Composed from individual 2D crystals, such devices use the properties of those materials to create functionalities that are not accessible in other heterostructures. Here we review the properties of novel 2D crystals and examine how their properties are used in new heterostructure devices.

  14. Quantum dot nanoscale heterostructures for solar energy conversion.

    PubMed

    Selinsky, Rachel S; Ding, Qi; Faber, Matthew S; Wright, John C; Jin, Song

    2013-04-07

    Quantum dot nanoscale semiconductor heterostructures (QDHs) are a class of materials potentially useful for integration into solar energy conversion devices. However, realizing the potential of these heterostructured systems requires the ability to identify and synthesize heterostructures with suitably designed materials, controlled size and morphology of each component, and structural control over their shared interface. In this review, we will present the case for the utility and advantages of chemically synthesized QDHs for solar energy conversion, beginning with an overview of various methods of heterostructured material synthesis and a survey of heretofore reported materials systems. The fundamental charge transfer properties of the resulting materials combinations and their basic design principles will be outlined. Finally, we will discuss representative solar photovoltaic and photoelectrochemical devices employing QDHs (including quantum dot sensitized solar cells, or QDSSCs) and examine how QDH synthesis and design impacts their performance.

  15. Raman Characterization of Graphene and 2D TMD Heterostructures

    NASA Astrophysics Data System (ADS)

    Derby, Benjamin; Hight Walker, Angela

    2015-03-01

    We report efforts to produce and characterize graphene and two-dimensional transition-metal dichalcogenides (TMD) heterostructures. Using PDMS stamps, exfoliation of graphene, MoS2, h-BN, and TaS2 precedes the stacking of these mono- and few layers into heterostructures. The goal is to engineer mis-orientation to enhanced Raman signatures of various layers within the heterostructures. Previous studies have reported a Raman signal strength that is angle dependent between bi-layers. Using resonant Raman spectroscopy, we probe the quality of these constructed heterostructures. Ultimately, we plan to combine our optical measurements with an applied magnetic field to probe the complex magneto-Raman interaction. Previous studies show a magneto-phonon resonance at specific field strengths and laser excitations. Our results to date will be summarized.

  16. Doping-Induced Interband Gain in InAs/AlSb Quantum Wells

    NASA Technical Reports Server (NTRS)

    Kolokolov, K. I.; Ning, C. Z.

    2005-01-01

    A paper describes a computational study of effects of doping in a quantum well (QW) comprising a 10-nm-thick layer of InAs sandwiched between two 21-nm-thick AlSb layers. Heretofore, InAs/AlSb QWs have not been useful as interband gain devices because they have type-II energy-band-edge alignment, which causes spatial separation of electrons and holes, thereby leading to weak interband dipole matrix elements. In the doping schemes studied, an interior sublayer of each AlSb layer was doped at various total areal densities up to 5 X 10(exp 12) / square cm. It was found that (1) proper doping converts the InAs layer from a barrier to a well for holes, thereby converting the heterostructure from type II to type I; (2) the resultant dipole matrix elements and interband gains are comparable to those of typical type-I heterostructures; and (3) dipole moments and optical gain increase with the doping level. Optical gains in the transverse magnetic mode can be almost ten times those of other semiconductor material systems in devices used to generate medium-wavelength infrared (MWIR) radiation. Hence, doped InAs/AlSb QWs could be the basis of an alternative material system for devices to generate MWIR radiation.

  17. Interface Superconductivity in Graphite- and CuCl-Based Heterostructures

    DTIC Science & Technology

    2015-01-22

    AFRL-OSR-VA-TR-2015-0062 Interface superconductivity in graphite- and CuCl-based heterostructures Yakov Kopelevich UNIVERSIDADE EEADUAL DE CAMPINAS...TITLE AND SUBTITLE "INTERFACE SUPERCONDUCTIVITY IN GRAPHITE AND CuCl-BASED HETEROSTRUCTURES" 5a. CONTRACT NUMBER 5b. GRANT NUMBER FA9550-13-1-0056 5c...long-standing problem of possible high- temperature superconductivity in CuCl. The obtained experimental evidence indicates that the low resistance

  18. Vertical heterostructures based on graphene and other 2D materials

    SciTech Connect

    Antonova, I. V.

    2016-01-15

    Recent advances in the fabrication of vertical heterostructures based on graphene and other dielectric and semiconductor single-layer materials, including hexagonal boron nitride and transition-metal dichalcogenides, are reviewed. Significant progress in this field is discussed together with the great prospects for the development of vertical heterostructures for various applications, which are associated, first of all, with reconsideration of the physical principles of the design and operation of device structures based on graphene combined with other 2D materials.

  19. Method and apparatus for selectively annealing heterostructures using microwaves

    NASA Technical Reports Server (NTRS)

    Atwater, Harry A. (Inventor); Brain, Ruth A. (Inventor); Barmatz, Martin B. (Inventor)

    1998-01-01

    The present invention discloses a process for selectively annealing heterostructures using microwaves. A heterostructure, comprised of a material having higher microwave absorption and a material having lower microwave absorption, is exposed to microwaves in the cavity. The higher microwave absorbing material absorbs the microwaves and selectively heats while the lower microwave absorbing material absorbs small amounts of microwaves and minimally heats. The higher microwave absorbing material is thereby annealed onto the less absorbing material which is thermally isolated.

  20. Method and apparatus for selectively annealing heterostructures using microwave

    NASA Technical Reports Server (NTRS)

    Atwater, Harry A. (Inventor); Brain, Ruth A. (Inventor); Barmatz, Martin B. (Inventor)

    1998-01-01

    The present invention discloses a process for selectively annealing heterostructures using microwaves. A heterostructure, comprised of a material having higher microwave absorption and a material having lower microwave absorption, is exposed to microwaves in the cavity. The higher microwave absorbing material absorbs the microwaves and selectively heats while the lower microwave absorbing material absorbs small amounts of microwaves and minimally heats. The higher microwave absorbing material is thereby annealed onto the less absorbing material which is thermally isolated.

  1. Research on Silicon, Carbon, and Silicon Carbide Heterostructures

    DTIC Science & Technology

    1990-09-14

    0Innr Jc9&9b 1. TITLE (Include Security Classification) Research on Silicon, Carbon, and Silicon Carbide Heterostructures Z. PERSONAL AUTHOR(S) W. D...and identify by block number) FIELD I GROUP SUB-GROUP PLASMAS. DEPOSITION. THIN FILMS. SILICON CARBIDE . DIAMOND. SURFACES. DESORPTION. CHARACTERIZATION...AND SILICON CARBIDE HETEROSTRUCTURES W. D. Partlow (P.I.), W. J. Choyke, J. T. Yates, Jr., C. C. Cheng, H. Gutleben, L. E. Kline, R. R. Mitchell, J

  2. Tunable hyperbolic metamaterials utilizing phase change heterostructures

    SciTech Connect

    Krishnamoorthy, Harish N. S.; Menon, Vinod M.; Zhou, You; Ramanathan, Shriram; Narimanov, Evgenii

    2014-03-24

    We present a metal-free tunable anisotropic metamaterial where the iso-frequency surface is tuned from elliptical to hyperbolic dispersion by exploiting the metal-insulator phase transition in the correlated material vanadium dioxide (VO{sub 2}). Using VO{sub 2}-TiO{sub 2} heterostructures, we demonstrate the transition in the effective dielectric constant parallel to the layers to undergo a sign change from positive to negative as the VO{sub 2} undergoes the phase transition. The possibility to tune the iso-frequency surface in real time using external perturbations such as temperature, voltage, or optical pulses creates new avenues for controlling light-matter interaction.

  3. Tunneling for a novel Pascal heterostructure.

    NASA Astrophysics Data System (ADS)

    López-Cruz, E.; Cocoletzi, Gregorio H.

    1998-03-01

    The well known Pascal triangle is used to obtain a new numerical array and then semiconductor heterostructures(E. López-Cruz and G. H. Cocoletzi, Suplemento del Bol. Soc. Mex. Fis. 11-3), 7 (1997). are formed in order to investigate theoretically electronic tunneling phenomena. AlGaAs/GaAs materials are considered to write the hamiltonian of the electrons and solve the Schroedinger equation for the envelope function. Numerical calculations are performed on the transmission coefficient taking into account the structural parameters. Results show resonances as well as the presence of minibands and minigaps for high number of layers. It is explained how the tunneling structure behaves as the numerical array is changed.

  4. Rashba-Edelstein Magnetoresistance in Metallic Heterostructures

    NASA Astrophysics Data System (ADS)

    Nakayama, Hiroyasu; Kanno, Yusuke; An, Hongyu; Tashiro, Takaharu; Haku, Satoshi; Nomura, Akiyo; Ando, Kazuya

    2016-09-01

    We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi /Ag /CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.

  5. Giant switchable Rashba effect in oxide heterostructures

    SciTech Connect

    Zhong, Zhicheng; Si, Liang; Zhang, Qinfang; Yin, Wei-Guo; Yunoki, Seiji; Held, Karsten

    2015-03-01

    One of the most fundamental phenomena and a reminder of the electron’s relativistic nature is the Rashba spin splitting for broken inversion symmetry. Usually this splitting is a tiny relativistic correction. Interfacing ferroelectric BaTiO₃ and a 5d (or 4d) transition metal oxide with a large spin-orbit coupling, Ba(Os,Ir,Ru)O₃, we show that giant Rashba spin splittings are indeed possible and even controllable by an external electric field. Based on density functional theory and a microscopic tight binding understanding, we conclude that the electric field is amplified and stored as a ferroelectric Ti-O distortion which, through the network of oxygen octahedra, induces a large (Os,Ir,Ru)-O distortion. The BaTiO₃/Ba(Os,Ru,Ir)O₃ heterostructure is hence the ideal test station for switching and studying the Rashba effect and allows applications at room temperature.

  6. Giant switchable Rashba effect in oxide heterostructures

    DOE PAGES

    Zhong, Zhicheng; Si, Liang; Zhang, Qinfang; ...

    2015-03-01

    One of the most fundamental phenomena and a reminder of the electron’s relativistic nature is the Rashba spin splitting for broken inversion symmetry. Usually this splitting is a tiny relativistic correction. Interfacing ferroelectric BaTiO₃ and a 5d (or 4d) transition metal oxide with a large spin-orbit coupling, Ba(Os,Ir,Ru)O₃, we show that giant Rashba spin splittings are indeed possible and even controllable by an external electric field. Based on density functional theory and a microscopic tight binding understanding, we conclude that the electric field is amplified and stored as a ferroelectric Ti-O distortion which, through the network of oxygen octahedra, inducesmore » a large (Os,Ir,Ru)-O distortion. The BaTiO₃/Ba(Os,Ru,Ir)O₃ heterostructure is hence the ideal test station for switching and studying the Rashba effect and allows applications at room temperature.« less

  7. Probing charge transfer in a novel class of luminescent perovskite-based heterostructures composed of quantum dots bound to RE-activated CaTiO3 phosphors

    SciTech Connect

    Crystal S. Lewis; Wong, Stanislaus S.; Liu, Haiqing; Han, Jinkyu; Wang, Lei; Yue, Shiyu; Brennan, Nicholas A.

    2016-01-04

    We report on the synthesis and structural characterization of novel semiconducting heterostructures composed of cadmium selenide (CdSe) quantum dots (QDs) attached onto the surfaces of novel high-surface area, porous rare-earth-ion doped alkaline earth titanate micron-scale spherical motifs, i.e. both Eu-doped and Pr-doped CaTiO3, composed of constituent, component nanoparticles. These unique metal oxide perovskite building blocks were created by a multi-pronged synthetic strategy involving molten salt and hydrothermal protocols. Subsequently, optical characterization of these heterostructures indicated a clear behavioral dependence of charge transfer in these systems upon a number of parameters such as the nature of the dopant, the reaction temperature, and particle size. Specifically, 2.7 nm diameter ligand-functionalized CdSe QDs were anchored onto sub-micron sized CaTiO3-based spherical assemblies, prepared by molten salt protocols. We found that both the Pr- and Eu-doped CaTiO3 displayed pronounced PL emissions, with maximum intensities observed using optimized lanthanide concentrations of 0.2 mol% and 6 mol%, respectively. Analogous experiments were performed on Eu-doped BaTiO3 and SrTiO3 motifs, but CaTiO3 still performed as the most effective host material amongst the three perovskite systems tested. Furthermore, the ligand-capped CdSe QD-doped CaTiO3 heterostructures exhibited effective charge transfer between the two individual constituent nanoscale components, an assertion corroborated by the corresponding quenching of their measured PL signals.

  8. Band alignment of two-dimensional lateral heterostructures

    NASA Astrophysics Data System (ADS)

    Zhang, Junfeng; Xie, Weiyu; Zhao, Jijun; Zhang, Shengbai

    2017-03-01

    Recent experimental synthesis of two-dimensional (2D) heterostructures opens a door to new opportunities in tailoring the electronic properties for novel 2D devices. Here, we show that a wide range of lateral 2D heterostructures could have a prominent advantage over the traditional three-dimensional (3D) heterostructures, because their band alignments are insensitive to the interfacial conditions. They should be at the Schottky-Mott limits for semiconductor-metal junctions and at the Anderson limits for semiconductor junctions, respectively. This fundamental difference from the 3D heterostructures is rooted in the fact that, in the asymptotic limit of large distance, the effect of the interfacial dipole vanishes for 2D systems. Due to the slow decay of the dipole field and the dependence on the vacuum thickness, however, studies based on first-principles calculations often failed to reach such a conclusion. Taking graphene/hexagonal-BN and MoS2/WS2 lateral heterostructures as the respective prototypes, we show that the converged junction width can be order of magnitude longer than that for 3D junctions. The present results provide vital guidance to high-quality transport devices wherever a lateral 2D heterostructure is involved.

  9. Vibrating property of single Ge based heterostructure nanowires

    NASA Astrophysics Data System (ADS)

    Zhang, Yao; Wang, Chunrui; Xu, Jing

    2013-12-01

    Raman spectrum of single heterostructure nanowire can reflect its unusual lattice vibrations as well as the junction features. In this paper, we report Raman spectra of two morphologies of single Ge based heterostructure nanowire, that is, one is CdSe/Ge biaxial heterostructure nanowires(sample I), another is Ge nanowires is surrounded by CdSe nanoparticles (sample II), which is fabricated by one step thermal evaporation of CdSe and Ge powder. A new mode was observed in Raman spectrum of Ge nanowires surrounded by CdSe nanoparticles, which caused by the interaction of LO mode of CdSe and LO (TO) mode of Ge. The LO (TO) mode of Ge nanowire in CdSe/Ge biaxial heterostructure nanowires and Ge nanowires surrounded by CdSe nanoparticles all has a red-shift in comparison with that of Ge nanowires. The vibrational mode of CdSe in CdSe/Ge biaxial heterostructure nanowires has a red-shift. The vibrational mode of CdSe in Ge nanowires surrounded by CdSe nanoparticles has a blue-shift. The red-shift mode may be caused by quantum confinement effect. The blue-shift mode may be originated from tensile stress or high density of stacking defects. The vibrating mode of the heterostructure nanowires was much sensitive to stacking fault than to quantum confinement effect when the diameter of nanowire is larger than 300nm.

  10. Double exchange bias in ferrimagnetic heterostructures

    NASA Astrophysics Data System (ADS)

    Hebler, B.; Reinhardt, P.; Katona, G. L.; Hellwig, O.; Albrecht, M.

    2017-03-01

    We report on the magnetic reversal characteristics of exchange coupled ferrimagnetic (FI) T b19F e81/T b36F e64 heterostructures. Both layers are amorphous and exhibit strong perpendicular magnetic anisotropy. The investigated heterostructures consist of a Tb-dominated and a Fe-dominated FI layer. Thus, in the magnetic ground state the net moments of the individual layers are oppositely aligned due to antiferromagnetic coupling of Fe and Tb moments. By cooling the system below 160 K, a large positive and negative exchange bias (EB) effect appears for the Tb- and Fe-dominated layers, respectively. The biasing depends only on the initial magnetization state and is neither affected by a cooling field nor by loop cycling. The phenomenon can be explained by the presence of a hard magnetic Fe-dominated interfacial layer, which forms during the sputter deposition process due to interface mixing and resputtering effects. This interfacial layer acts as a pinning layer below a certain temperature, where its coercivity increases to values larger than the accessible magnetic field range. This assumption is further supported by introducing a 0.9-nm-thick Ru spacer layer, which causes the EB effect to vanish. The EB effect was further investigated for a sample series, where the thickness ratio of the two Tb-Fe layers was varied, while keeping the total thickness of the bilayers constant. Only samples where the individual layers are sufficiently thick reveal double shifted loops, indicating the high sensitivity of the observed bias effect with respect to the magnetic properties of the individual layers and their interfacial area.

  11. Magnetoelectric imaging of multiferroic heterostructures (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Ghidini, Massimo; Lesaine, Arnaud; Zhu, Bonan; Moya, Xavier; Yan, Wenjing; Crossley, Sam; Nair, Bhasi; Mansell, Rhodri; Cowburn, Russell P.; Barnes, Crispin H. W.; Kronast, Florian; Valencia, Sergio; Maccherozzi, Francesco; Dhesi, Sarnjeet S.; Mathur, Neil

    2015-09-01

    Electrical control of magnetism has been demonstrated in multiferroic compounds and ferromagnetic semiconductors, but electrical switching of a substantial net magnetization at room temperature has not been demonstrated in these materials. This goal has instead been achieved in heterostructures comprising ferromagnetic films in which electrically driven magnetic changes arise due to strain or exchange bias from ferroic substrates, or due to charge effects induced by a gate. However, previous work focused on electrical switching of an in-plane magnetization or involved the assistance of applied magnetic fields. In heterostructures made of juxtaposed ferroelectric and ferromagnetic layers, we have shown electrical control with no applied magnetic field of the perpendicular magnetization of small features [1] and of magnetic stripe domains patterns [2]. Here we investigate Ni81Fe19 films on ferroelectric substrates with and without buffer layers of Cu, whose presence precludes charge-mediated coupling. Ni81Fe19 has virtually zero magnetostriction, but sufficiently thin films show large magnetostriction, and thus, on increasing film thickness through the threshold for zero magnetostriction, we have seeked the crossover from charge- to strain-mediated coupling. We will then show that strain associated with the motion of 90°- ferroelectric domain walls in a BaTiO3 substrate, can switch the magnetization of an array of overlying single-domain Ni dots. [1] M. Ghidini, R. Pellicelli, J. L. Prieto, X. Moya, J. Soussi, J. Briscoe, S. Dunn and N. D. Mathur, Nature Communications 4 (2013) 1453. [2] M. Ghidini, F.Maccherozzi, X. Moya, L. C. Phillips, W.Yan, J. Soussi, N. Métallier, M.Vickers, , N. -J.Steinke, R. Mansell, C. H. W. Barnes, S. S. Dhesi, and N. D. Mathur, Adv. Mater.doi: 10.1002/adma.201404799 (2015).

  12. Non-redox modulated fluorescence strategy for sensitive and selective ascorbic acid detection with highly photoluminescent nitrogen-doped carbon nanoparticles via solid-state synthesis.

    PubMed

    Zhu, Xiaohua; Zhao, Tingbi; Nie, Zhou; Liu, Yang; Yao, Shouzhuo

    2015-08-18

    Highly photoluminescent nitrogen-doped carbon nanoparticles (N-CNPs) were prepared by a simple and green route employing sodium alginate as a carbon source and tryptophan as both a nitrogen source and a functional monomer. The as-synthesized N-CNPs exhibited excellent water solubility and biocompatibility with a fluorescence quantum yield of 47.9%. The fluorescence of the N-CNPs was intensively suppressed by the addition of ascorbic acid (AA). The mechanism of the fluorescence suppression of the N-CNPs was investigated, and the synergistic action of the inner filter effect (IFE) and the static quenching effect (SQE) contributed to the intensive fluorescence suppression, which was different from those reported for the traditional redox-based fluorescent probes. Owing to the spatial effect and hydrogen bond between the AA and the groups on the N-CNP surface, excellent sensitivity and selectivity for AA detecting was obtained in a wide linear relationship from 0.2 μM to 150 μM. The detection limit was as low as 50 nM (signal-to-noise ratio of 3). The proposed sensing systems also represented excellent sensitivity and selectivity for AA analysis in human biological fluids, providing a valuable platform for AA sensing in clinic diagnostic and drug screening.

  13. A 980 nm pseudomorphic single quantum well laser for pumping erbium-doped optical fiber amplifiers

    NASA Technical Reports Server (NTRS)

    Larsson, A.; Forouhar, S.; Cody, J.; Lang, R. J.; Andrekson, P. A.

    1990-01-01

    The authors have fabricated ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs GRIN-SCH SQW (graded-index separate-confinement-heterostructure single-quantum-well) lasers, emitting at 980 nm, with a maximum output power of 240 mW from one facet and a 22 percent coupling efficiency into a 1.55-micron single-mode optical fiber. These lasers satisfy the requirements on efficient and compact pump sources for Er3+-doped fiber amplifiers.

  14. [Doping and urologic tumors].

    PubMed

    Pinto, F; Sacco, E; Volpe, A; Gardi, M; Totaro, A; Calarco, A; Racioppi, M; Gulino, G; D'Addessi, A; Bassi, P F

    2010-01-01

    Several substances such as growth hormone (GH), erythropoietin (Epo), and anabolic steroids (AS) are improperly utilized to increase the performance of athletes. Evaluating the potential cancer risk associated with doping agents is difficult since these drugs are often used at very high doses and in combination with other licit or illicit drugs. The GH, via its mediator, the insulin-like growth factor 1 (IGF-1), is involved in the development and progression of cancer. Animal studies suggested that high levels of GH/IGF-1 increase progression of androgen-independent prostate cancer. Clinical data regarding prostate cancer are mostly based on epidemiological studies or indirect data such as IGF-1 high levels in patients with prostate cancer. Even if experimental studies showed a correlation between Epo and cancer, no clinical data are currently available on cancer development related to Epo as a doping agent. Androgens are involved in prostate carcinogenesis modulating genes that regulate cell proliferation, apoptosis and angiogenesis. Most information on AS is anecdotal (case reports on prostate, kidney and testicular cancers). Prospective epidemiologic studies failed to support the hypothesis that circulating androgens are positively associated with prostate cancer risk. Currently, clinical and epidemiological studies supporting association between doping and urological neoplasias are not available. Nowadays, exposure to doping agents starts more prematurely with a consequent longer exposition period; drugs are often used at very high doses and in combination with other licit or illicit drugs. Due to all these elements it is impossible to predict all the side effects, including cancer; more detailed studies are therefore necessary.

  15. Effects of substrate misorientation and background impurities on electron transport in molecular-beam-epitaxial grown GaAs/AlGaAs modulation-doped quantum-well structures

    NASA Technical Reports Server (NTRS)

    Radulescu, D. C.; Wicks, G. W.; Schaff, W. J.; Calawa, A. R.; Eastman, L. F.

    1987-01-01

    The effects of substrate misorientation off the (001) plane and of background impurities on electron transport in MBE-grown GaAs/AlGaAs modulation-doped superlattice-buffered quantum-well structures were investigated. Low-field transport data were obtained on GaAs/AlGaAs structures grown on substrates oriented 0, 2, 4, and 6.5 deg off the (001) plane towards either (111)A or (111)B. It is shown that the low-field two-dimensional electron gas (2DEG) mobility is a function of the angle and direction of the substrate orientation, and that the 2DEG mobility is a function of the direction of the applied electric field in the GaAs quantum well. The anisotropy in the 2DEG mobility is also a function of the tilt angle and tilt azimuth direction of the substrate from the (001) plane. In addition, it is shown that the amount of interface scattering from the inverted interface is a sensitive function of the amount of background impurities in the MBE machine.

  16. Superconductivity-induced magnetization depletion in a ferromagnet through an insulator in a ferromagnet-insulator-superconductor hybrid oxide heterostructure

    NASA Astrophysics Data System (ADS)

    Prajapat, C. L.; Singh, Surendra; Paul, Amitesh; Bhattacharya, D.; Singh, M. R.; Mattauch, S.; Ravikumar, G.; Basu, S.

    2016-05-01

    Coupling between superconducting and ferromagnetic states in hybrid oxide heterostructures is presently a topic of intense research. Such a coupling is due to the leakage of the Cooper pairs into the ferromagnet. However, tunneling of the Cooper pairs though an insulator was never considered plausible. Using depth sensitive polarized neutron reflectivity we demonstrate the coupling between superconductor and magnetic layers in epitaxial La2/3Ca1/3MnO3 (LCMO)/SrTiO3/YBa2Cu3O7-δ (YBCO) hybrid heterostructures, with SrTiO3 as an intervening oxide insulator layer between the ferromagnet and the superconductor. Measurements above and below the superconducting transition temperature (TSC) of YBCO demonstrate a large modulation of magnetization in the ferromagnetic layer below the TSC of YBCO in these heterostructures. This work highlights a unique tunneling phenomenon between the epitaxial layers of an oxide superconductor (YBCO) and a magnetic layer (LCMO) through an insulating layer. Our work would inspire further investigations on the fundamental aspect of a long range order of the triplet spin-pairing in hybrid structures.

  17. Superconductivity-induced magnetization depletion in a ferromagnet through an insulator in a ferromagnet-insulator-superconductor hybrid oxide heterostructure.

    PubMed

    Prajapat, C L; Singh, Surendra; Paul, Amitesh; Bhattacharya, D; Singh, M R; Mattauch, S; Ravikumar, G; Basu, S

    2016-05-21

    Coupling between superconducting and ferromagnetic states in hybrid oxide heterostructures is presently a topic of intense research. Such a coupling is due to the leakage of the Cooper pairs into the ferromagnet. However, tunneling of the Cooper pairs though an insulator was never considered plausible. Using depth sensitive polarized neutron reflectivity we demonstrate the coupling between superconductor and magnetic layers in epitaxial La2/3Ca1/3MnO3 (LCMO)/SrTiO3/YBa2Cu3O7-δ (YBCO) hybrid heterostructures, with SrTiO3 as an intervening oxide insulator layer between the ferromagnet and the superconductor. Measurements above and below the superconducting transition temperature (TSC) of YBCO demonstrate a large modulation of magnetization in the ferromagnetic layer below the TSC of YBCO in these heterostructures. This work highlights a unique tunneling phenomenon between the epitaxial layers of an oxide superconductor (YBCO) and a magnetic layer (LCMO) through an insulating layer. Our work would inspire further investigations on the fundamental aspect of a long range order of the triplet spin-pairing in hybrid structures.

  18. Performance improvement of tin-doped zinc oxide thin-film transistor by novel channel modulation layer of indium tin oxide/tin zinc oxide

    NASA Astrophysics Data System (ADS)

    Chen, Zhuofa; Han, Dedong; Zhao, Nannan; Wu, Jing; Cong, Yingying; Dong, Junchen; Zhao, Feilong; Zhang, Shengdong; Zhang, Xing; Wang, Yi; Liu, Lifeng

    2015-04-01

    By applying a novel active modulation layer of indium tin oxide/tin zinc oxide (ITO/TZO), we have successfully fabricated high-performance bottom-gate-type dual-active-layer thin-film transistors (TFTs) on a glass substrate at a low temperature by a simple process. The as-fabricated dual-active-layer ITO/TZO TFTs exhibited excellent electrical properties compared with single-active-layer TZO TFTs. We found that the dual-layer ITO/TZO TFT with an optimized stack structure of ITO (5 nm)/TZO (45 nm) as the channel layer exhibits excellent properties, namely, a high saturation mobility of 204 cm2 V-1 s-1, a steep subthreshold slope of 219 mV/dec, a low threshold voltage of 0.8 V, and a high on-off current ratio of 4.3 × 107. A physical mechanism for the electrical improvement is also deduced. Owing to its advantages, namely, a low processing temperature, a high electrical performance, a simple process, and a low cost, this novel active modulation layer is highly promising for the manufacture of oxide semiconductor TFT and transparent displays.

  19. Optical spectroscopy of nanoscale and heterostructured oxides

    NASA Astrophysics Data System (ADS)

    Senty, Tess R.

    Through careful analysis of a material's properties, devices are continually getting smaller, faster and more efficient each day. Without a complete scientific understanding of material properties, devices cannot continue to improve. This dissertation uses optical spectroscopy techniques to understand light-matter interactions in several oxide materials with promising uses mainly in light harvesting applications. Linear absorption, photoluminescence and transient absorption spectroscopy are primarily used on europium doped yttrium vanadate nanoparticles, copper gallium oxide delafossites doped with iron, and cadmium selenide quantum dots attached to titanium dioxide nanoparticles. Europium doped yttrium vanadate nanoparticles have promising applications for linking to biomolecules. Using Fourier-transform infrared spectroscopy, it was shown that organic ligands (benzoic acid, 3-nitro 4-chloro-benzoic acid and 3,4-dihydroxybenzoic acid) can be attached to the surface of these molecules using metal-carboxylate coordination. Photoluminescence spectroscopy display little difference in the position of the dominant photoluminescence peaks between samples with different organic ligands although there is a strong decrease in their intensity when 3,4-dihydroxybenzoic acid is attached. It is shown that this strong quenching is due to the presence of high-frequency hydroxide vibrational modes within the organic linker. Ultraviolet/visible linear absorption measurements on delafossites display that by doping copper gallium oxide with iron allows for the previously forbidden fundamental gap transition to be accessed. Using tauc plots, it is shown that doping with iron lowers the bandgap from 2.8 eV for pure copper gallium oxide, to 1.7 eV for samples with 1 -- 5% iron doping. Using terahertz transient absorption spectroscopy measurements, it was also determined that doping with iron reduces the charge mobility of the pure delafossite samples. A comparison of cadmium selenide

  20. Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis

    PubMed Central

    Zhao, Y.; Wan, Z.; Xu, X.; Patil, S. R.; Hetmaniuk, U.; Anantram, M. P.

    2015-01-01

    Hexagonal boron nitride (hBN) is drawing increasing attention as an insulator and substrate material to develop next generation graphene-based electronic devices. In this paper, we investigate the quantum transport in heterostructures consisting of a few atomic layers thick hBN film sandwiched between graphene nanoribbon electrodes. We show a gate-controllable vertical transistor exhibiting strong negative differential resistance (NDR) effect with multiple resonant peaks, which stay pronounced for various device dimensions. We find two distinct mechanisms that are responsible for NDR, depending on the gate and applied biases, in the same device. The origin of first mechanism is a Fabry-Pérot like interference and that of the second mechanism is an in-plane wave vector matching when the Dirac points of the electrodes align. The hBN layers can induce an asymmetry in the current-voltage characteristics which can be further modulated by an applied bias. We find that the electron-phonon scattering suppresses the first mechanism whereas the second mechanism remains relatively unaffected. We also show that the NDR features are tunable by varying device dimensions. The NDR feature with multiple resonant peaks, combined with ultrafast tunneling speed provides prospect for the graphene-hBN-graphene heterostructure in the high-performance electronics. PMID:25991076

  1. Thickness dependence of voltage-driven magnetization switching in FeCo/PI/piezoelectric actuator heterostructures

    NASA Astrophysics Data System (ADS)

    Cui, B. S.; Guo, X. B.; Wu, K.; Li, D.; Zuo, Y. L.; Xi, L.

    2016-03-01

    Strain mediated magnetization switching of ferromagnetic/substrate/piezoelectric actuator heterostructures has become a hot issue due to the advantage of low-power consumption. In this work, Fe65Co35 thin films were deposited on a flexible polyamides (PI) substrate, which has quite low Young’s module (~4 GPa for PI as compared to ~180 GPa for Si) and benefits from complete transfer of the strain from the piezoelectric actuator to magnetic thin films. A complete 90° transition of the magnetic easy axis was realized in 50 nm thick FeCo films under the voltage of 70 V, while a less than 90° rotation angle of the magnetic easy axis direction was observed in other samples, which was ascribed to the distribution of the anisotropy field and/or the orthogonal misalignment between stress induced anisotropy and original uniaxial anisotropy. A model considering two uniaxial anisotropies with orthogonal arrangement was used to quantitatively understand the observed results and the linear-like voltage dependent anisotropy field, especially for 10 nm FeCo films, in which the switching mechanism along the easy axis direction can be explained by the domain wall depinning model. It indicates that the magnetic domain-wall movement velocity may be controlled by strain through tuning the energy barrier of the pinning in heterostructures. Moreover, voltage-driven 90° magnetization switching with low-power consumption was achieved in this work.

  2. Atomic Ordering in InGaN Alloys within Nanowire Heterostructures.

    PubMed

    Woo, Steffi Y; Bugnet, Matthieu; Nguyen, Hieu P T; Mi, Zetian; Botton, Gianluigi A

    2015-10-14

    Ternary III-nitride based nanowires (NWs) are promising for optoelectronic applications by offering advantageous design and control over composition, structure, and strain. Atomic-level chemical ordering in wurtzite InGaN alloys along the c-plane direction with a 1:1 periodicity within InGaN/GaN NW heterostructures was investigated by scanning transmission electron microscopy. Atomic-number-sensitive imaging contrast was used to simultaneously assign the In-rich and Ga-rich planes and determine the crystal polarity to differentiate unique sublattice sites. The nonrandom occupation of the c-planes in the InGaN alloys is confirmed by the occurrence of additional superlattice spots in the diffraction pattern within the ternary alloy. Compositional modulations in the ordered InGaN was further studied using atomic-resolution elemental mapping, outlining the substantial In-enrichment. Confirming the preferential site occupation of In-atoms provides experimental validation for the previous theoretical model of ordered InGaN alloys in bulk epilayers based on differences in surface site energy. Therefore, this study strongly suggests that atomic ordering in InGaN has a surface energetics-induced origin. Optimization of atomic ordering, in particular in III-nitride NW heterostructures, could be an alternative design tool toward desirable structural and compositional properties for various device applications operating at longer visible wavelengths.

  3. Structural and optical investigations of Al xGa 1- xAs:Si/GaAs(1 0 0) MOCVD heterostructures

    NASA Astrophysics Data System (ADS)

    Seredin, P. V.; Glotov, A. V.; Domashevskaya, E. P.; Arsentyev, I. N.; Vinokurov, D. A.; Tarasov, I. S.

    2010-11-01

    Al xGa 1- xAs:Si/GaAs(1 0 0) heterostructure and homoepitaxial GaAs:Si/GaAs(1 0 0) structures grown by MOCVD were investigated. The changes observed in our experiments with highly doped Al xGa 1- xAs alloys, led not only to the reconstruction of the electron density and formation of deep levels (DX-centers) with subsequent relaxation of the crystal lattice in the alloy, but also indicate at the formation of quaternary Al xGa 1- x- ySi y+ zAs 1- z substitution-type alloy grown on GaAs(1 0 0).

  4. Noncontacting laser photocarrier radiometric depth profilometry of harmonically modulated band bending in the space-charge layer at doped SiO{sub 2}-Si interfaces

    SciTech Connect

    Mandelis, Andreas; Batista, Jerias; Gibkes, Juergen; Pawlak, Michael; Pelzl, Josef

    2005-04-15

    Laser infrared photocarrier radiometry (PCR) was used with a harmonically modulated low-power laser pump and a superposed dc superband-gap optical bias (a secondary laser beam) to control and monitor the space-charge-layer (SCL) width in oxidized p-Si-SiO{sub 2} and n-Si-SiO{sub 2} interfaces (wafers) exhibiting charged interface-state related band bending. Applying the theory of PCR-SCL dynamics [A. Mandelis, J. Appl. Phys. 97, 083508 (2005)] to the experiments yielded various transport parameters of the samples as well as depth profiles of the SCL exhibiting complete ( p-type Si) or partial (n-type Si) band flattening, to a degree controlled by widely different minority-carrier capture cross section at each interface. The uncompensated charge density at the interface was also calculated from the theory.

  5. Enhanced optoelectronic performances of vertically aligned hexagonal boron nitride nanowalls-nanocrystalline diamond heterostructures

    PubMed Central

    Sankaran, Kamatchi Jothiramalingam; Hoang, Duc Quang; Kunuku, Srinivasu; Korneychuk, Svetlana; Turner, Stuart; Pobedinskas, Paulius; Drijkoningen, Sien; Van Bael, Marlies K.; D’ Haen, Jan; Verbeeck, Johan; Leou, Keh-Chyang; Lin, I-Nan; Haenen, Ken

    2016-01-01

    Field electron emission (FEE) properties of vertically aligned hexagonal boron nitride nanowalls (hBNNWs) grown on Si have been markedly enhanced through the use of nitrogen doped nanocrystalline diamond (nNCD) films as an interlayer. The FEE properties of hBNNWs-nNCD heterostructures show a low turn-on field of 15.2 V/μm, a high FEE current density of 1.48 mA/cm2 and life-time up to a period of 248 min. These values are far superior to those for hBNNWs grown on Si substrates without the nNCD interlayer, which have a turn-on field of 46.6 V/μm with 0.21 mA/cm2 FEE current density and life-time of 27 min. Cross-sectional TEM investigation reveals that the utilization of the diamond interlayer circumvented the formation of amorphous boron nitride prior to the growth of hexagonal boron nitride. Moreover, incorporation of carbon in hBNNWs improves the conductivity of hBNNWs. Such a unique combination of materials results in efficient electron transport crossing nNCD-to-hBNNWs interface and inside the hBNNWs that results in enhanced field emission of electrons. The prospective application of these materials is manifested by plasma illumination measurements with lower threshold voltage (370 V) and longer life-time, authorizing the role of hBNNWs-nNCD heterostructures in the enhancement of electron emission. PMID:27404130

  6. Growth of Novel Semiconducting Nano and Heterostructures

    NASA Astrophysics Data System (ADS)

    Rathi, Somilkumar J.

    This dissertation presents research findings on the three materials systems: lateral Si nanowires (SiNW), In2Se3/Bi 2Se3 heterostructures and graphene. The first part of the thesis was focused on the growth and characterization of lateral SiNW. Lateral here refers to wires growing along the plane of substrate; vertical NW on the other hand grow out of the plane of substrate. It was found, using the Au-seeded vapor -- liquid -- solid technique, that epitaxial single-crystal SiNW can be grown laterally along Si(111) substrates that have been miscut toward [11- 2]. The ratio of lateral-to-vertical NW was found to increase as the miscut angle increased and as disilane pressure and substrate temperature decreased. Based on this observation, growth parameters were identified whereby all of the deposited Au seeds formed lateral NW. Furthermore, the nanofaceted substrate guided the growth via a mechanism that involved pinning of the trijunction at the liquid/solid interface of the growing nanowire. Next, the growth of selenide heterostructures was explored. Specifically, molecular beam epitaxy was utilized to grow In2Se3 and Bi2Se3 films on h-BN, highly oriented pyrolytic graphite and Si(111) substrates. Growth optimizations of In2Se3 and Bi2Se3 films were carried out by systematically varying the growth parameters. While the growth of these films was demonstrated on h-BN and HOPG surface, the majority of the effort was focused on growth on Si(111). Atomically flat terraces that extended laterally for several hundred nm, which were separated by single quintuple layer high steps characterized surface of the best In2Se3 films grown on Si(111). These In2Se3 films were suitable for subsequent high quality epitaxy of Bi2Se3 . The last part of this dissertation was focused on a recently initiated and ongoing study of graphene growth on liquid metal surfaces. The initial part of the study comprised a successful modification of an existing growth system to accommodate graphene

  7. Highly doped silicon nanowires by monolayer doping.

    PubMed

    Veerbeek, Janneke; Ye, Liang; Vijselaar, Wouter; Kudernac, Tibor; van der Wiel, Wilfred G; Huskens, Jurriaan

    2017-02-23

    Controlling the doping concentration of silicon nanostructures is challenging. Here, we investigated three different monolayer doping techniques to obtain silicon nanowires with a high doping dose. These routes were based on conventional monolayer doping, starting from covalently bound dopant-containing molecules, or on monolayer contact doping, in which a source substrate coated with a monolayer of a carborane silane was the dopant source. As a third route, both techniques were combined to retain the benefits of conformal monolayer formation and the use of an external capping layer. These routes were used for doping fragile porous nanowires fabricated by metal-assisted chemical etching. Differences in porosity were used to tune the total doping dose inside the nanowires, as measured by X-ray photoelectron spectroscopy and secondary ion mass spectrometry measurements. The higher the porosity, the higher was the surface available for dopant-containing molecules, which in turn led to a higher doping dose. Slightly porous nanowires could be doped via all three routes, which resulted in highly doped nanowires with (projected areal) doping doses of 10(14)-10(15) boron atoms per cm(2) compared to 10(12) atoms per cm(2) for a non-porous planar sample. Highly porous nanowires were not compatible with the conventional monolayer doping technique, but monolayer contact doping and the combined route resulted for these highly porous nanowires in tremendously high doping doses up to 10(17) boron atoms per cm(2).

  8. Electrical transport and spin polarization effects in superconductor/ferromagnet oxide heterostructure vertical transport devices

    NASA Astrophysics Data System (ADS)

    Kraus, Philip Allan

    1999-12-01

    Thin film heterostructures of cuprate superconductors (S) and manganite ferromagnets (F) have been successfully grown by molecular beam epitaxy (MBE). The epitaxial bilayers were patterned into devices for spin-injection from the ferromagnet into the superconductor for study of the effects of spin-polarization on Andreev reflection and critical current suppression in the superconductor. Heterostructure bilayers of the perovskite oxides DyBa2Cu 3O7-x (DBCO) and La2/3Ba1/3MnO 3 (LBMO) can be grown as single crystal thin films with few secondary phases by employing the block-by-block MBE deposition technique. Considerable effort was expended to make samples with nearly ideal DBCO surfaces, because the LBMO was deposited on top of the DBCO and the quality of the S-F interface determined the nature of the effects observed. In particular, if the spinpolarized carriers are to traverse the interface without spin disorder scattering, the S-F interface should be free of unwanted chemical reactions between the DBCO and LBMO. Reflection high-energy electron diffraction was used to determine the quality of the growing interface in- situ. Samples of the as-grown heterostructures were patterned into mesa structures for vertical transport experiments, i.e., the current flowed nominally perpendicular to the plane of the interface. The patterning was done with low energy, low ion-density Ar ion milling, with the sample at 77 K. An oxygen anneal of the paterned sample achieved an oxygen doping in the DBCO high enough to form the superconducting phase. Insulating and contact layers were deposited to prepare the devices for measurement. Transport measurements were carried out at temperatures in the range 2 to 300 K and magnetic fields up to 12 T. The measurements made were the conductance-voltage characteristic of the S-F interface and suppression of the critical current by injection of current from the ferromagnetic. The design permitted both experiments to be performed on the same

  9. Resistance switching of epitaxial VO2/Al2O3 heterostructure at room temperature induced by organic liquids

    NASA Astrophysics Data System (ADS)

    Yang, Mengmeng; Yang, Yuanjun; Hong, Bin; Huang, Haoliang; Hu, Sixia; Dong, Yongqi; Wang, Haibo; He, Hao; Zhao, Jiyin; Liu, Xuguang; Luo, Zhenlin; Li, Xiaoguang; Zhang, Haibin; Gao, Chen

    2015-03-01

    We studied using organic liquids (cyclohexane, n-butanol, and ethylene glycol) to modulate the transport properties at room temperature of an epitaxial VO2 film on a VO2/Al2O3 heterostructure. The resistance of the VO2 film increased when coated with cyclohexane or n-butanol, with maximum changes of 31% and 3.8%, respectively. In contrast, it decreased when coated with ethylene glycol, with a maximum change of -7.7%. In all cases, the resistance recovered to its original value after removing the organic liquid. This organic-liquid-induced reversible resistance switching suggests that VO2 films can be used as organic molecular sensors.

  10. Spin filtering in a δ-doped magnetic-electric-barrier nanostructure

    SciTech Connect

    Li, Shuai; Lu, Mao-Wang Jiang, Ya-Qing; Chen, Sai-Yan

    2014-09-15

    We report a theoretical study on spin-polarized transport in a δ-doped magnetic-electric-barrier nanostructure, which can be realized in experiments by depositing two ferromagnetic stripes on top and bottom of a semiconductor heterostructure under an applied voltage and by using atomic layer doping technique. The spin-polarized behavior of the electron in this device is found to be quite sensitive to the δ-doping. One can conveniently tune the degree of the electron spin polarization by adjusting the weight and/or position of the δ-doping. Thus, the involved nansosystem can be employed as a controllable spin filter, which may be helpful for exploiting new spin-polarized source for spintronics applications.

  11. Gene doping.

    PubMed

    Azzazy, Hassan M E

    2010-01-01

    Gene doping abuses the legitimate approach of gene therapy. While gene therapy aims to correct genetic disorders by introducing a foreign gene to replace an existing faulty one or by manipulating existing gene(s) to achieve a therapeutic benefit, gene doping employs the same concepts to bestow performance advantages on athletes over their competitors. Recent developments in genetic engineering have contributed significantly to the progress of gene therapy research and currently numerous clinical trials are underway. Some athletes and their staff are probably watching this progress closely. Any gene that plays a role in muscle development, oxygen delivery to tissues, neuromuscular coordination, or even pain control is considered a candidate for gene dopers. Unfortunately, detecting gene doping is technically very difficult because the transgenic proteins expressed by the introduced genes are similar to their endogenous counterparts. Researchers today are racing the clock because assuring the continued integrity of sports competition depends on their ability to develop effective detection strategies in preparation for the 2012 Olympics, which may mark the appearance of genetically modified athletes.

  12. Lithium adsorption on heteroatom mono and dual doped graphene

    NASA Astrophysics Data System (ADS)

    Denis, Pablo A.

    2017-03-01

    Herein, we studied the interaction of lithium with monodoped (X) and dual-doped graphene (XY), X = Al, Si, P and S and Y = B, N and O. Dual-doping is the best choice to modulate the interaction of lithium with graphene. The strongest interaction with lithium was observed for SN-dual-doped graphene, while S-doped and N-doped graphene displayed the weakest interactions. With regards to the electronic properties, for some systems Li adsorption opened a band-gap, while for others restored the Dirac cones and the semimetallic character at the K-point. Therefore, Li-doping is a useful tool to fine-tune the band gap in mono and dual-doped graphene.

  13. Microwave-induced zero-resistance state in two-dimensional electron systems with unidirectional periodic modulation

    SciTech Connect

    Bykov, A. A.; Rodyakina, E. E.; Latyshev, A. V.; Strygin, I. S.; Goran, A. V.; Kalagin, A. K.

    2016-01-04

    In this study we fabricated lateral superlattices (LSLs) based on the selectively doped GaAs/AlAs heterostructures with a high-mobility two-dimensional (2D) electron gas. The LSLs were formed using the electron-beam lithography and lift-off techniques, which produced a set of metallic strips on top of a heterojunction. The amplitude of the 2D electron gas modulation in the LSL was controlled by the gate voltage applied to the metallic strips. The LSLs with two different periods (a = 200 nm and 500 nm) were used to investigate the influence of microwave radiation with the frequency of 110–150 GHz on the 2D electron transport at the temperature T = 1.6 K in the magnetic field B < 1 T. We have found that zero-resistance states (ZRSs) appear under the microwave radiation in the 2D systems with a unidirectional periodic modulation. These ZRSs are located at the minima of commensurability oscillations.

  14. Photoconductivity of Graphene in Proximity to La AlO3 /Sr TiO3 Heterostructures: Phenomenon and Photosensor Applications

    NASA Astrophysics Data System (ADS)

    Cheng, Long; Fan, Xiaodong; Wei, Laiming; Lu, Juanjuan; Liang, Haixing; Qi, Ji; Zeng, Changgan

    2016-07-01

    The proximal coupling between graphene and transition-metal-oxide heterostructures may integrate their unique features and further generate emergent states. Using the photoconductivity of graphene as an effective probe, we demonstrate the existence of a built-in polar field within the La AlO3 layer of the La AlO3 /Sr TiO3 heterostructures for both conducting and insulating La AlO3 /Sr TiO3 interfaces. Such a polar field is a prerequisite for the validity of the electronic reconstruction mechanism for the interfacial conductivity. The built-in polar field is reflected by the hole doping in the graphene in proximity to the La AlO3 /Sr TiO3 induced by pulsed deep-ultraviolet illumination regardless of the graphene's carrier type. These photoresponse characteristics also render the graphene /La AlO3 /Sr TiO3 hybrid system a convenient deep-ultraviolet sensor. Moreover, we design an efficient broad-spectrum photodetector benefiting from the large in-plane electric field in graphene across the boundary between the graphene/La AlO3 /Sr TiO3 and graphene/Sr TiO3 . Our findings may provide clues to the design of photosensors based on the hybrid structures of graphene and oxide heterostructures.

  15. Ground-State Electronic Structure of Quasi-One-Dimensional Wires in Semiconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Owen, E. T.; Barnes, C. H. W.

    2016-11-01

    We apply density-functional theory, in the local-density approximation, to a quasi-one-dimensional electron gas in order to quantify the effect of Coulomb and correlation effects in modulating and, therefore, patterning, the charge-density distribution. Our calculations are presented specifically for surface-gate-defined quasi-one-dimensional quantum wires in a GaAs-(AlGa)As heterostructure, but we expect our results to apply more generally for other low-dimensional semiconductor systems. We show that at high densities with strong confinement, screening of electrons in the direction transverse to the wire is efficient and density modulations are not visible. In the low-density, weak-confinement regime, the exchange-correlation potential induces small density modulations as the electrons are depleted from the wire. At the weakest confinements and lowest densities, the electron density splits into two rows, thereby forming a pair of quantum wires that lies beneath the surface gates. An additional double-well external potential forms at very low density which enhances this row-splitting phenomenon. We produce phase diagrams that show a transition between the presence of a single quantum wire in a split-gate structure and two quantum wires. We suggest that this phenomenon can be used to pattern and modulate the electron density in low-dimensional structures with particular application to systems where a proximity effect from a surface gate is valuable.

  16. Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

    NASA Astrophysics Data System (ADS)

    Park, Hee Chul; Myung, Nojoon; Lee, Seung Joo

    We investigate spin transport through ferromagnetic graphene vertical heterostructures where a sandwiched tunneling layer is either a normal or ferroelectric insulator. We show that the spin-polarization of the tunneling current is electrically controlled via gate voltages. We also demonstrate that the tunneling current of Dirac fermions can be prohibited when the spin configuration of ferromagnetic graphene sheets is opposite. Giant electroresistance can thus be developed by using the proposed heterostructure in this study. The effects of temperature on spin transport and the giant electroresistance ratio are also investigated. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures through electric fields via gate and bias electrodes. The research leading to these results has received funding from the European Union Seventh Framework Programme under grant agreement No604391 Graphene Flagship, Project Code (IBS-R024-D1), and the NRF grant funded by MSIP(No. 2014-066298).

  17. Electron scattering times in ZnO based polar heterostructures

    SciTech Connect

    Falson, J.; Kozuka, Y.; Smet, J. H.; Arima, T.; Tsukazaki, A.; Kawasaki, M.

    2015-08-24

    The remarkable historic advances experienced in condensed matter physics have been enabled through the continued exploration and proliferation of increasingly richer and cleaner material systems. In this work, we report on the scattering times of charge carriers confined in state-of-the-art MgZnO/ZnO heterostructures displaying electron mobilities in excess of 10{sup 6} cm{sup 2}/V s. Through an examination of low field quantum oscillations, we obtain the effective mass of charge carriers, along with the transport and quantum scattering times. These times compare favorably with high mobility AlGaAs/GaAs heterostructures, suggesting the quality of MgZnO/ZnO heterostructures now rivals that of traditional semiconductors.

  18. Two-dimensional heterostructures: fabrication, characterization, and application

    DOE PAGES

    Wang, Hong; Liu, Fucai; Fu, Wei; ...

    2014-08-13

    Two-dimensional (2D) materials such as graphene, hexagonal boron nitrides (hBN), and transition metal dichalcogenides (TMDs, e.g., MoS2) have attracted considerable attention in the past few years because of their novel properties and versatile potential applications. These 2D layers can be integrated into a monolayer (lateral 2D heterostructure) or a multilayer stack (vertical 2D heterostructure). The resulting artificial 2D structures provide access to new properties and applications beyond their component 2D atomic crystals and hence, they are emerging as a new exciting field of research. Lastly, in this article, we review recent progress on the fabrication, characterization, and applications of variousmore » 2D heterostructures.« less

  19. Two-dimensional heterostructures: fabrication, characterization, and application

    SciTech Connect

    Wang, Hong; Liu, Fucai; Fu, Wei; Fang, Zheyu; Zhou, Wu; Liu, Zheng

    2014-08-13

    Two-dimensional (2D) materials such as graphene, hexagonal boron nitrides (hBN), and transition metal dichalcogenides (TMDs, e.g., MoS2) have attracted considerable attention in the past few years because of their novel properties and versatile potential applications. These 2D layers can be integrated into a monolayer (lateral 2D heterostructure) or a multilayer stack (vertical 2D heterostructure). The resulting artificial 2D structures provide access to new properties and applications beyond their component 2D atomic crystals and hence, they are emerging as a new exciting field of research. Lastly, in this article, we review recent progress on the fabrication, characterization, and applications of various 2D heterostructures.

  20. Novel hybrid C/BN two-dimensional heterostructures

    NASA Astrophysics Data System (ADS)

    Kvashnin, Dmitry G.; Kvashnina, Olga P.; Avramov, Pavel V.; Sorokin, Pavel B.; Kvashnin, Alexander G.

    2017-02-01

    Here we present an investigation of new quasi-two-dimensional heterostructures based on the alternation of bounded carbon and boron nitride layers (C/BN). We carried out a theoretical study of the atomic structure, stability and electronic properties of the proposed heterostructures. Such ultrathin quasi-two-dimensional C/BN films can be synthesized by means of chemically induced phase transition by connection of the layers of multilayered h-BN/graphene van der Waals heterostructures, which is indicated by the negative phase transition pressure in the calculated phase diagrams (P, T) of the films. It was shown that the band gap value of the C/BN films spans the infrared and visible spectrum. We hope that the proposed films and fabrication method can be considered as a possible route to obtain nanostructures with a controllable band gap in wide energy range. This makes these materials potentially suitable for a variety of applications, including photovoltaics, photoelectronics and more.

  1. One-dimensional silicon-cadmium selenide heterostructures.

    SciTech Connect

    Sun, X. H.; Sham, T. K.; Rosenberg, R. A.; Shenoy, G. K.; X-Ray Science Division; Univ. of Western Ontario

    2007-01-01

    We report the synthesis and characterization of 1D Si-CdSe heteronanostructures with different morphologies such as coaxial, biaxial, sandwiched, pattern wrapping, coiling, structures etc., via a one-step metal catalyzed thermal evaporation method. Both Si and CdSe exhibit single crystalline characteristics in the heterostructures, as revealed by scanning transmission electron microscopy. The Si nanowires formed directly from the Si substrate via the solid-liquid-solid process acts as the absorption site for CdSe deposition as well as the template for the formation of 1D Si-CdSe heterostructures. Time-resolved X-ray excited optical luminescence from the 1D Si-CdSe heteronanostructures reveals two main emission features at 530 and 637 nm with slow and fast decay lifetime, respectively. The 530 and 637 nm emission is associated with the Si and CdSe component of the heterostructures, respectively.

  2. Nanocavity Integrated van der Waals Heterostructure Light-Emitting Tunneling Diode.

    PubMed

    Liu, Chang-Hua; Clark, Genevieve; Fryett, Taylor; Wu, Sanfeng; Zheng, Jiajiu; Hatami, Fariba; Xu, Xiaodong; Majumdar, Arka

    2017-01-11

    Developing a nanoscale, integrable, and electrically pumped single mode light source is an essential step toward on-chip optical information technologies and sensors. Here, we demonstrate nanocavity enhanced electroluminescence in van der Waals heterostructures (vdWhs) at room temperature. The vertically assembled light-emitting device uses graphene/boron nitride as top and bottom tunneling contacts and monolayer WSe2 as an active light emitter. By integrating a photonic crystal cavity on top of the vdWh, we observe the electroluminescence is locally enhanced (>4 times) by the nanocavity. The emission at the cavity resonance is single mode and highly linearly polarized (84%) along the cavity mode. By applying voltage pulses, we demonstrate direct modulation of this single mode electroluminescence at a speed of ∼1 MHz, which is faster than most of the planar optoelectronics based on transition metal chalcogenides (TMDCs). Our work shows that cavity integrated vdWhs present a promising nanoscale optoelectronic platform.

  3. Transfer matrix theory of monolayer graphene/bilayer graphene heterostructure superlattice

    SciTech Connect

    Wang, Yu

    2014-10-28

    We have formulated a transfer matrix method to investigate electronic properties of graphene heterostructure consisting of monolayer graphene and bilayer counterpart. By evaluating transmission, conductance, and band dispersion, we show that, irrespective of the different carrier chiralities in monolayer graphene and bilayer graphene, superlattice consisting of biased bilayer graphene barrier and monolayer graphene well can mimic the electronic properties of conventional semiconductor superlattice, displaying the extended subbands in the quantum tunneling regime and producing anisotropic minigaps for the classically allowed transport. Due to the lateral confinement, the lowest mode has shifted away from the charge neutral point of monolayer graphene component, opening a sizeable gap in concerned structure. Following the gate-field and geometry modulation, all electronic states and gaps between them can be externally engineered in an electric-controllable strategy.

  4. Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride.

    PubMed

    Lin, Shisheng; Li, Xiaoqiang; Wang, Peng; Xu, Zhijuan; Zhang, Shengjiao; Zhong, Huikai; Wu, Zhiqian; Xu, Wenli; Chen, Hongsheng

    2015-10-13

    MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS2/bulk semiconductor heterostructure, static charge transfer shifts the Fermi level of MoS2 toward that of bulk semiconductor, lowering the barrier height of the formed junction. Herein, we introduce hexagonal boron nitride (h-BN) into MoS2/GaAs heterostructure to suppress the static charge transfer, and the obtained MoS2/h-BN/GaAs solar cell exhibits an improved power conversion efficiency of 5.42%. More importantly, the sandwiched h-BN makes the Fermi level tuning of MoS2 more effective. By employing chemical doping and electrical gating into the solar cell device, PCE of 9.03% is achieved, which is the highest among all the reported monolayer transition metal dichalcogenide based solar cells.

  5. Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride

    PubMed Central

    Lin, Shisheng; Li, Xiaoqiang; Wang, Peng; Xu, Zhijuan; Zhang, Shengjiao; Zhong, Huikai; Wu, Zhiqian; Xu, Wenli; Chen, Hongsheng

    2015-01-01

    MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS2/bulk semiconductor heterostructure, static charge transfer shifts the Fermi level of MoS2 toward that of bulk semiconductor, lowering the barrier height of the formed junction. Herein, we introduce hexagonal boron nitride (h-BN) into MoS2/GaAs heterostructure to suppress the static charge transfer, and the obtained MoS2/h-BN/GaAs solar cell exhibits an improved power conversion efficiency of 5.42%. More importantly, the sandwiched h-BN makes the Fermi level tuning of MoS2 more effective. By employing chemical doping and electrical gating into the solar cell device, PCE of 9.03% is achieved, which is the highest among all the reported monolayer transition metal dichalcogenide based solar cells. PMID:26458358

  6. Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride

    NASA Astrophysics Data System (ADS)

    Lin, Shisheng; Li, Xiaoqiang; Wang, Peng; Xu, Zhijuan; Zhang, Shengjiao; Zhong, Huikai; Wu, Zhiqian; Xu, Wenli; Chen, Hongsheng

    2015-10-01

    MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS2/bulk semiconductor heterostructure, static charge transfer shifts the Fermi level of MoS2 toward that of bulk semiconductor, lowering the barrier height of the formed junction. Herein, we introduce hexagonal boron nitride (h-BN) into MoS2/GaAs heterostructure to suppress the static charge transfer, and the obtained MoS2/h-BN/GaAs solar cell exhibits an improved power conversion efficiency of 5.42%. More importantly, the sandwiched h-BN makes the Fermi level tuning of MoS2 more effective. By employing chemical doping and electrical gating into the solar cell device, PCE of 9.03% is achieved, which is the highest among all the reported monolayer transition metal dichalcogenide based solar cells.

  7. Emission properties of InGaAs/GaAs heterostructures with quantum wells and dots after irradiation with neutrons

    SciTech Connect

    Baidus, N. V.; Vikhrova, O. V. Zvonkov, B. N.; Malysheva, E. I.; Trufanov, A. N.

    2015-03-15

    The effect of neutron radiation on the luminescence of InGaAs/GaAs heterostructures with quantum wells and quantum dots is studied. It is found that neutron radiation results both in the formation of defects and in the radiation-induced annealing of growth-related defects. Quantum dots are more stable to neutron radiation in comparison with quantum wells. It is shown that the layer of InGaAs/GaAs quantum dots located near the surface is less sensitive to irradiation with neutrons compared with a similar layer located in the bulk. In the first case, one can observe an increase in the photoluminescence and electroluminescence intensities after irradiation with neutrons, which is related to the effects of radiation-induced annealing. The pronounced effect of elastic strains in the InGaAs/GaAs quantum wells on the extent of quenching of the photoluminescence intensity upon irradiation with neutrons is revealed. In heterostructures with quantum wells, the effect of radiation-induced annealing manifests itself in a shift of the photoluminescence peak to longer wavelengths as a result of a decrease in elastic strains upon irradiation with neutrons. Doping of the GaAs buffer layer with silicon also reduces the value of this spectral shift.

  8. Engineered Mott ground state in a LaTiO3+δ/LaNiO3 heterostructure

    PubMed Central

    Cao, Yanwei; Liu, Xiaoran; Kareev, M.; Choudhury, D.; Middey, S.; Meyers, D.; Kim, J.-W.; Ryan, P. J.; Freeland, J.W.; Chakhalian, J.

    2016-01-01

    In pursuit of creating cuprate-like electronic and orbital structures, artificial heterostructures based on LaNiO3 have inspired a wealth of exciting experimental and theoretical results. However, to date there is a very limited experimental understanding of the electronic and orbital states emerging from interfacial charge transfer and their connections to the modified band structure at the interface. Towards this goal, we have synthesized a prototypical superlattice composed of a correlated metal LaNiO3 and a doped Mott insulator LaTiO3+δ, and investigated its electronic structure by resonant X-ray absorption spectroscopy combined with X-ray photoemission spectroscopy, electrical transport and theory calculations. The heterostructure exhibits interfacial charge transfer from Ti to Ni sites, giving rise to an insulating ground state with orbital polarization and eg orbital band splitting. Our findings demonstrate how the control over charge at the interface can be effectively used to create exotic electronic, orbital and spin states. PMID:26791402

  9. Engineered Mott ground state in a LaTiO3+δ/LaNiO3 heterostructure

    DOE PAGES

    Cao, Yanwei; Liu, Xiaoran; Kareev, M.; ...

    2016-01-21

    In pursuit of creating cuprate-like electronic and orbital structures, artificial heterostructures based on LaNiO3 have inspired a wealth of exciting experimental and theoretical results. However, to date there is a very limited experimental understanding of the electronic and orbital states emerging from interfacial charge transfer and their connections to the modified band structure at the interface. Towards this goal, we have synthesized a prototypical superlattice composed of a correlated metal LaNiO3 and a doped Mott insulator LaTiO3+δ, and investigated its electronic structure by resonant X-ray absorption spectroscopy combined with X-ray photoemission spectroscopy, electrical transport and theory calculations. The heterostructure exhibitsmore » interfacial charge transfer from Ti to Ni sites, giving rise to an insulating ground state with orbital polarization and eg orbital band splitting. Here, our findings demonstrate how the control over charge at the interface can be effectively used to create exotic electronic, orbital and spin states.« less

  10. Elimination of gold diffusion in the heterostructure core/shell growth of high performance Ge/Si nanowire HFETs

    SciTech Connect

    Picraux, Samuel T; Dayeh, Shadi A

    2010-01-01

    Radial heterostructure nanowires offer the possibility of surface, strain, band-edge and modulution-doped engineering for optimizing performance of nanowire transistors. Synthesis of such heterostructures is non-trivial and is typically accompanied with Au diffusion on the nanowire sidewalls that result in rough morphology and undesired whisker growth. Here, they report a novel growth procedure to synthesize Ge/Si core/multi-shell nanowires by engineering the growth interface between the Au seed and the nanowire sidewalls. Single crystal Ge/Si core/multi-shell nanowires are used to fabricate side-by-side FET transistors with and without Au diffusion. Elimination of Au diffusion in the synthesis of such structures led to {approx} 2X improvement in hole field-effect mobility, transconductances and currents. Initial prototype devices with a 10 nm PECVD nitride gate dielectric resulted in a record maximum on current of 430 {micro}A/V (I{sub DS}L{sub G}/{pi}DV{sub DS}), {approx} 2X higher than ever achieved before in a p-type FET.

  11. Effects of composition modulation on the luminescence properties of Eu(3+) doped Li1-xAgxLu(MoO4)2 solid-solution phosphors.

    PubMed

    Cheng, Fangrui; Xia, Zhiguo; Molokeev, Maxim S; Jing, Xiping

    2015-11-07

    Double molybdate scheelite-type solid-solution phosphors Li1-xAgxLu1-y(MoO4)2:yEu(3+) were synthesized by the solid state reaction method, and their crystal structures and luminescence properties were investigated in detail. The composition modulation and structural evolution of this series of samples were studied and the selected AgEu(MoO4)2, AgLu(MoO4)2, LiLu(MoO4)2 and LiEu(MoO4)2 phases were analyzed based on the Rietveld refinement. Depending on the variation of the Li/Ag ratio in Li1-xAgxLu1-y(MoO4)2:yEu(3+) phosphors, the difference in the luminescence properties of Li1-xAgxLu1-y(MoO4)2:yEu(3+) phosphors was ascribed to two factors, one reason could be assigned to the coupling effect and the nonradiative transition between the energy levels of LixAg1-xLu(MoO4)2 matrices and the activator Eu(3+), another could be due to the near ultraviolet energy absorption and transmission efficiency between the charge-transfer (CT) band of O(2-)-Mo(6+) and the 4f → 4f emissive transitions of Eu(3+). The ultraviolet-visible diffuse reflection spectra (UV-vis DRS) and Raman spectra analysis were also used to verify the above mechanism.

  12. High-frequency dynamics of hybrid oxide Josephson heterostructures

    NASA Astrophysics Data System (ADS)

    Komissinskiy, P.; Ovsyannikov, G. A.; Constantinian, K. Y.; Kislinski, Y. V.; Borisenko, I. V.; Soloviev, I. I.; Kornev, V. K.; Goldobin, E.; Winkler, D.

    2008-07-01

    We summarize our results on Josephson heterostructures Nb/Au/YBa2Cu3Ox that combine conventional (S) and oxide high- Tc superconductors with a dominant d -wave symmetry of the superconducting order parameter (D). The heterostructures were fabricated on (001) and (1 1 20) YBa2Cu3Ox films grown by pulsed laser deposition. The structural and surface studies of the (1 1 20) YBa2Cu3Ox thin films reveal nanofaceted surface structure with two facet domain orientations, which are attributed as (001) and (110)-oriented surfaces of YBa2Cu3Ox and result in S/D(001) and S/D(110) nanojunctions formed on the facets. Electrophysical properties of the Nb/Au/YBa2Cu3Ox heterostructures are investigated by the electrical and magnetic measurements at low temperatures and analyzed within the faceting scenario. The superconducting current-phase relation (CPR) of the heterostructures with finite first and second harmonics is derived from the Shapiro steps, which appear in the I-V curves of the heterostructures irradiated at frequencies up to 100 GHz. The experimental positions and amplitudes of the Shapiro steps are explained within the modified resistive Josephson junction model, where the second harmonic of the CPR and capacitance of the Josephson junctions are taken into account. We experimentally observe a crossover from a lumped to a distributed Josephson junction limit for the size of the heterostructures smaller than Josephson penetration depth. The effect is attributed to the variations of the harmonics of the superconducting CPR across the heterojunction, which may give rise to splintered vortices of magnetic flux quantum. Our investigations of parameters and phenomena that are specific for superconductors having d -wave symmetry of the superconducting order parameter may be of importance for applications such as high-frequency detectors and novel elements of a possible quantum computer.

  13. Slidable atomic layers in van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Kobayashi, Yu; Taniguchi, Takashi; Watanabe, Kenji; Maniwa, Yutaka; Miyata, Yasumitsu

    2017-04-01

    We report the preparation and manipulation of slidable atomic layers in clean, incommensurate van der Waals (vdW) heterostructures. Monolayer and multilayer WS2 grains are grown on graphite and hexagonal boron nitride (hBN) via chemical vapor deposition, and these grains can slide smoothly on graphite and hBN surfaces by manipulation with a tip. Furthermore, this sliding process allows the suspension, tearing, stacking, and connection of the atomic layers. These results demonstrate a novel approach for developing a wide variety of atomic-layer heterostructures with tunable interlayer coupling and an ideal system for studying the superlubricity of incommensurate, highly clean vdW contacts.

  14. Inverse spin galvanic effect in topological-insulator based heterostructures

    NASA Astrophysics Data System (ADS)

    Rodriguez-Vega, Martin; Schwiete, Georg; Sinova, Jairo; Rossi, Enrico

    2015-03-01

    We study the inverse spin galvanic effect in heterostructures formed by a layer of a three dimensional strong topological insulator (TI) and a magnetic material. We consider different configurations for the heterostructure and for the contacts. We carefully treat the effect on the TI bands of the proximity of a magnetic material and take into account both intra-band and inter-band contributions to the current-induced spin polarization of the TI surface states. Finally, we discuss the relevance of our results for recent experiments. Work supported by ONR-N00014-13-1-0321, ACS-PRF # 53581-DNI5, and the Jeffress Memorial Trust.

  15. Ion-implanted planar-buried-heterostructure diode laser

    DOEpatents

    Brennan, Thomas M.; Hammons, Burrell E.; Myers, David R.; Vawter, Gregory A.

    1991-01-01

    A Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding layer 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an ion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.

  16. Vertical-cavity in-plane heterostructures: Physics and applications

    SciTech Connect

    Taghizadeh, Alireza; Mørk, Jesper; Chung, Il-Sug

    2015-11-02

    We show that in-plane (lateral) heterostructures realized in vertical cavities with high contrast grating reflectors can be used to significantly modify the anisotropic dispersion curvature, also interpreted as the photon effective mass. This design freedom enables exotic configurations of heterostructures and many interesting applications. The effects of the anisotropic photon effective mass on the mode confinement, mode spacing, and transverse modes are investigated. As a possible application, the method of boosting the speed of diode lasers by engineering the photon-photon resonance is discussed. Based on this platform, we propose a system of two laterally coupled cavities, which shows the breaking of parity-time symmetry in vertical cavity structures.

  17. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure

    SciTech Connect

    Barbosa, B. G.; Arakaki, H.; Souza, C. A. de; Pusep, Yu. A.

    2014-03-21

    Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. The emission at highest energy is generated in the NWs with tunneling thin AlGaAs inner shell and thin GaAs outer shell due to recombination of the photoexcited electrons confined in the outer shell with the holes in the core. Lower energy emission was shown to occur in the NWs with thick outer shell grown in the form of a short-period GaAs/AlGaAs multiple quantum well structure. In this case, the tunneling probability through the multiple quantum wells controls the energy emitted by the NWs. The doping of core results in dominated low energy emission from the GaAs core.

  18. The electronic structure and spin states of 2D graphene/VX2 (X = S, Se) heterostructures.

    PubMed

    Popov, Z I; Mikhaleva, N S; Visotin, M A; Kuzubov, A A; Entani, S; Naramoto, H; Sakai, S; Sorokin, P B; Avramov, P V

    2016-12-07

    The structural, magnetic and electronic properties of 2D VX2 (X = S, Se) monolayers and graphene/VX2 heterostructures were studied using a DFT+U approach. It was found that the stability of the 1T phases of VX2 monolayers is linked to strong electron correlation effects. The study of vertical junctions comprising of graphene and VX2 monolayers demonstrated that interlayer interactions lead to the formation of strong spin polarization of both graphene and VX2 fragments while preserving the linear dispersion of graphene-originated bands. It was found that the insertion of Mo atoms between the layers leads to n-doping of graphene with a selective transformation of graphene bands keeping the spin-down Dirac cone intact.

  19. Conduction in In2O3/YSZ heterostructures: Complex interplay between electrons and ions, mediated by interfaces

    NASA Astrophysics Data System (ADS)

    Veal, B. W.; Eastman, J. A.

    2017-04-01

    Thin film In2O3/YSZ heterostructures exhibit significant increases in electrical conductance with time when small in-plane electric fields are applied. Contact resistances between the current electrodes and film and between the current electrodes and substrate are responsible for the behavior. With an in-plane electric field, different field profiles are established in the two materials, with the result that oxygen ions can be driven across the heterointerface, altering the doping of the n-type In2O3. A low frequency inductive feature observed in AC impedance spectroscopy measurements under DC bias conditions was found to be due to frequency-dependent changes in the contact resistance.

  20. Electric field tunable 60 GHz ferromagnetic resonance response in barium ferrite-barium strontium titanate multiferroic heterostructures

    NASA Astrophysics Data System (ADS)

    Song, Young-Yeal; Das, Jaydip; Krivosik, Pavol; Mo, Nan; Patton, Carl E.

    2009-05-01

    A magnetic-ferroelectric film heterostructure with a large electric field tuning of the ferromagnetic resonance (FMR) mode was fabricated. Pulse laser deposited 30 nm thick Pt electrodes and 3 μm thick barium strontium titanate films on Nb-doped strontium titanate substrates were capped with an unbonded 200 μm thick single crystal in-plane c-axis barium hexaferrite slab. The structure gives a 60 GHz FMR frequency shift of 16 MHz at a bias of 29 V, for an average response of 0.55 MHz/V. The maximum incremental tuning response at 29 V was 1.3 MHz/V. This is a hundredfold improvement over previous results.

  1. Improving photoelectrochemical performance by building Fe{sub 2}O{sub 3} heterostructure on TiO{sub 2} nanorod arrays

    SciTech Connect

    Cao, Chunlan; Hu, Chenguo; Shen, Weidong; Wang, Shuxia; Song, Sihong; Wang, Mingjun

    2015-10-15

    Highlights: • Fe{sub 2}O{sub 3}@TiO{sub 2} heterostructure was fabricated by two-step method. • The photoelectrochemical properties were studied upon visible light irradiation. • Fe{sub 2}O{sub 3}@TiO{sub 2} heterostructure shows superior photoelectrochemical property. • A possible mechanism for enhanced photoelectrochemical property was put forward. - Abstract: Fe{sub 2}O{sub 3}@TiO{sub 2} heterostructure nanorod arrays were synthesized on a fluorine-doped tin oxide conductive (FTO) glass substrate via two-step method for improving photoelectrochemical activity of TiO{sub 2}. The TiO{sub 2} nanorod arrays on FTO substrate were first prepared by hydrothermal method and then Fe{sub 2}O{sub 3} nanoparticles were coated onto the surface of TiO{sub 2} nanorod arrays through chemical bath deposition. The heterojunction yielded a photocurrent density of 39.75 μA cm{sup −2} at a bias potential of 0 V (vs. Ag/AgCl) under visible light irradiation, which is 2.2 times as much as that produced by the pure TiO{sub 2} nanorod arrays. The enhanced photoelectrochemical activity is attributed to the extension of the light response range and efficient separation of photogenerated carriers. Our results have demonstrated the advantage of the novel Fe{sub 2}O{sub 3}@TiO{sub 2} heterojunction and will provide a new path to the fabrication of heterostructural materials.

  2. Electronic transport in graphene-based heterostructures

    SciTech Connect

    Tan, J. Y.; Avsar, A.; Balakrishnan, J.; Taychatanapat, T.; O'Farrell, E. C. T.; Eda, G.; Castro Neto, A. H.; Koon, G. K. W.; Özyilmaz, B.; Watanabe, K.; Taniguchi, T.

    2014-05-05

    While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (2D) crystals influence the electronic performance of graphene. In this Letter, we study the surface morphology of 2D BN, gallium selenide (GaSe), and transition metal dichalcogenides (tungsten disulfide (WS{sub 2}) and molybdenum disulfide (MoS{sub 2})) crystals and their influence on graphene's electronic quality. Atomic force microscopy analysis shows that these crystals have improved surface roughness (root mean square value of only ∼0.1 nm) compared to conventional SiO{sub 2} substrate. While our results confirm that graphene devices exhibit very high electronic mobility (μ) on BN substrates, graphene devices on WS{sub 2} substrates (G/WS{sub 2}) are equally promising for high quality electronic transport (μ ∼ 38 000 cm{sup 2}/V s at room temperature), followed by G/MoS{sub 2} (μ ∼ 10 000 cm{sup 2}/V s) and G/GaSe (μ ∼ 2200 cm{sup 2}/V s). However, we observe a significant asymmetry in electron and hole conduction in G/WS{sub 2} and G/MoS{sub 2} heterostructures, most likely due to the presence of sulphur vacancies in the substrate crystals. GaSe crystals are observed to degrade over time even under ambient conditions, leading to a large hysteresis in graphene transport making it a less suitable substrate.

  3. Time-resolved PL and TEM studies of MOVPE-grown bulk dilute nitride and bismide quantum well heterostructure

    NASA Astrophysics Data System (ADS)

    Sin, Yongkun; Lingley, Zachary; Peterson, Mark; Brodie, Miles; Moss, Steven C.; Kim, Tae Wan; Kim, Honghyuk; Guan, Yingxin; Forghani, K.; Mawst, Luke J.; Kuech, Thomas F.

    2015-03-01

    Among several approaches proposed to achieve high-efficiency III-V multi-junction solar cells, the most promising approach is to incorporate a bottom junction consisting of a 1 - 1.25 eV material. In particular, several research groups have studied MBE- and MOVPE-grown 1 - 1.25 eV bulk (In)GaAsN(Sb) dilute nitride lattice matched to GaAs substrates, but it is a challenge to grow dilute nitrides without introducing a number of localized states or defects. Localized states originating from random distributions of nitrogen sites in dilute nitrides behave as highly efficient traps, leading to short minority carrier lifetimes. As our group previously reported, carrier dynamics studies are indispensable in the optimization of dilute nitride materials growth to achieve improved solar cell performance. Also, bismide QW heterostructures have recently received a great deal of attention for applications in solar cells and semiconductor lasers because theoretical studies have predicted reduction in nonradiative recombination in Bicontaining materials. For the present study, we employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in MOVPE-grown bulk (In)GaAsN(Sb) materials nominally lattice matched to GaAs substrates. Compared to our previous samples, our present samples grown using different metalorganic precursors at higher growth temperatures showed a significantly less background C doping density. Carrier lifetimes were measured from such dilute nitride samples with low C doping density at various temperatures between 10K and RT. We also performed preliminary TR-PL measurements on MOVPE-grown bismide QW heterostructures at low temperatures. Carrier lifetimes were measured from as-grown and annealed bismide QW structures consisting of GaAsBi(P) wells and GaAsP barriers. Lastly, TEM cross sections were prepared from both dilute nitride and bismide samples for defect and composition analysis using a high resolution TEM.

  4. Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy

    SciTech Connect

    Koley, G.; Spencer, M. G.

    2001-07-01

    Surface potentials on GaN epilayers and Al{sub 0.35}Ga{sub 0.65}N/GaN heterostructures have been studied by scanning Kelvin probe microscopy (SKPM) in conjunction with noncontact atomic force microscopy. The dependence of the surface potential on doping in GaN films, as well as the variation of surface potential with Al{sub 0.35}Ga{sub 0.65}N barrier layer thickness has been investigated. The bare surface barrier height (BSBH), as measured by SKPM, is observed to decrease from {similar_to}1. 40{+-}0.1 eV to {similar_to}0.60{+-}0.1 eV with increasing doping in the GaN epilayers. Schottky barrier height calculated from the measurements of BSBH on n-GaN agrees very well with results from previous studies. We have also estimated the surface state density for GaN based on the measured values of BSBH. The semiconductor {open_quotes}work function{close_quotes} at the Al{sub 0.35}Ga{sub 0.65}N surface (in heterostructure samples) is observed to decrease by {similar_to}0.60 eV with increase in barrier layer thickness from {similar_to}50 to {similar_to}440 Aa. A simple model considering the presence of a uniform density of charged acceptors in the Al{sub 0.35}Ga{sub 0.65}N layer is proposed to explain the observed decreasing trend in work function. {copyright} 2001 American Institute of Physics.

  5. Scalable solution-phase epitaxial growth of symmetry-mismatched heterostructures on two-dimensional crystal soft template

    PubMed Central

    Lin, Zhaoyang; Yin, Anxiang; Mao, Jun; Xia, Yi; Kempf, Nicholas; He, Qiyuan; Wang, Yiliu; Chen, Chih-Yen; Zhang, Yanliang; Ozolins, Vidvuds; Ren, Zhifeng; Huang, Yu; Duan, Xiangfeng

    2016-01-01

    Epitaxial heterostructures with precisely controlled composition and electronic modulation are of central importance for electronics, optoelectronics, thermoelectrics, and catalysis. In general, epitaxial material growth requires identical or nearly identical crystal structures with small misfit in lattice symmetry and parameters and is typically achieved by vapor-phase depositions in vacuum. We report a scalable solution-phase growth of symmetry-mismatched PbSe/Bi2Se3 epitaxial heterostructures by using two-dimensional (2D) Bi2Se3 nanoplates as soft templates. The dangling bond–free surface of 2D Bi2Se3 nanoplates guides the growth of PbSe crystal without requiring a one-to-one match in the atomic structure, which exerts minimal restriction on the epitaxial layer. With a layered structure and weak van der Waals interlayer interaction, the interface layer in the 2D Bi2Se3 nanoplates can deform to accommodate incoming layer, thus functioning as a soft template for symmetry-mismatched epitaxial growth of cubic PbSe crystal on rhombohedral Bi2Se3 nanoplates. We show that a solution chemistry approach can be readily used for the synthesis of gram-scale PbSe/Bi2Se3 epitaxial heterostructures, in which the square PbSe (001) layer forms on the trigonal/hexagonal (0001) plane of Bi2Se3 nanoplates. We further show that the resulted PbSe/Bi2Se3 heterostructures can be readily processed into bulk pellet with considerably suppressed thermal conductivity (0.30 W/m·K at room temperature) while retaining respectable electrical conductivity, together delivering a thermoelectric figure of merit ZT three times higher than that of the pristine Bi2Se3 nanoplates at 575 K. Our study demonstrates a unique epitaxy mode enabled by the 2D nanocrystal soft template via an affordable and scalable solution chemistry approach. It opens up new opportunities for the creation of diverse epitaxial heterostructures with highly disparate structures and functions. PMID:27730211

  6. Ultrasensitive Near-Infrared Photodetectors Based on a Graphene-MoTe2-Graphene Vertical van der Waals Heterostructure.

    PubMed

    Zhang, Kun; Fang, Xin; Wang, Yilun; Wan, Yi; Song, Qingjun; Zhai, Wenhao; Li, Yanping; Ran, Guangzhao; Ye, Yu; Dai, Lun

    2017-02-15

    Graphene and other layered materials, such as transition metal dichalcogenides, have rapidly established themselves as exceptional building blocks for optoelectronic applications because of their unique properties and atomically thin nature. The ability to stack them into van der Waals (vdWs) heterostructures with new functionality has opened a new platform for fundamental research and device applications. Nevertheless, near-infrared (NIR) photodetectors based on layered semiconductors are rarely realized. In this work, we fabricate a graphene-MoTe2-graphene vertical vdWs heterostructure on a SiO2/p(+)-Si substrate by a facile and reliable site-controllable transfer method and apply it for photodetection from the visible to NIR wavelength range. Compared to the layered semiconductor photodetectors reported thus far, the graphene-MoTe2-graphene photodetector has a superior performance, including high photoresponsivity (∼110 mA W(-1) at 1064 nm and 205 mA W(-1) at 473 nm), high external quantum efficiency (EQE; ∼12.9% at 1064 nm and ∼53.8% at 473 nm), rapid response and recovery processes (a rise time of 24 μs and a fall time of 46 μs under 1064 nm illumination), and free from an external source-drain power supply. We have employed scanning photocurrent microscopy to investigate the photocurrent generation in this heterostructure under various back-gate voltages and found that the two Schottky barriers between the graphenes and MoTe2 play an important role in the photocurrent generation. In addition, the vdWs heterostructure has a uniform photoresponsive area. The photoresponsivity and EQE of the photodetector can be modulated by the back-gate (p(+)-Si) voltage. We compared the responsivities of thin and thick flakes and found that the responsivity had a strong dependence on the thickness. The heterostructure has promising applications in future novel optoelectronic devices, enabling next-generation high-responsivity, high-speed, flexible, and transparent NIR

  7. An Analysis of the Effects of Low Energy Electron Radiation of Al(sub x)Ga(sub 1-x)N/GaN Modulation-Doped Field-Effect Transistors

    DTIC Science & Technology

    2004-03-01

    irradiated n-GaN,” IEEE, 35-42 (2000). [18] D. C. Look, et. al. “Defect Donor and Acceptor in GaN,” Physical Review Letters , Vol. 79, No. 6: 2273-2 76...1997). [19] D. C. Look, et. al. “On the Nitrogen Vacancy in GaN,” Applied Physics Letters , Vol. 83, No. 17: 3525-3527 (2003). [20] Ho Won Jang...et. al. “Mechanism of two-dimensional electron gas formation in AlxGa1-xN/GaN heterostructures,” Applied Physics Letters , Vol. 81, No. 7: 1249

  8. Boron-doped superlattices and Bragg mirrors in diamond

    SciTech Connect

    Fiori, A.; Bousquet, J.; Eon, D.; Omnès, F.; Bustarret, E.; Bellet-Amalric, E.

    2014-08-25

    A periodic modulation of the boron doping level of single crystal diamond multilayers over more than three orders of magnitude during epitaxial growth by microwave plasma-enhanced chemical vapor deposition is shown to yield Bragg mirrors in the visible. The thicknesses and doping level of the individual layers were controlled by in situ spectroscopic ellipsometry, enabling to tune the reflectance peak to the wavelength range of diamond color centers, such as NV{sup 0} or NV{sup −}. The crystalline quality, periodicity, and sharpness of the doping transitions in these doping superlattices over tens of periods were confirmed by high resolution X-ray diffraction.

  9. Doping Scheme of Semiconducting Atomic Chains

    NASA Technical Reports Server (NTRS)

    Toshishige, Yamada; Saini, Subhash (Technical Monitor)

    1998-01-01

    Atomic chains, precise structures of atomic scale created on an atomically regulated substrate surface, are candidates for future electronics. A doping scheme for intrinsic semiconducting Mg chains is considered. In order to suppress the unwanted Anderson localization and minimize the deformation of the original band shape, atomic modulation doping is considered, which is to place dopant atoms beside the chain periodically. Group I atoms are donors, and group VI or VII atoms are acceptors. As long as the lattice constant is long so that the s-p band crossing has not occurred, whether dopant atoms behave as donors or acceptors is closely related to the energy level alignment of isolated atomic levels. Band structures are calculated for Br-doped (p-type) and Cs-doped (n-type) Mg chains using the tight-binding theory with universal parameters, and it is shown that the band deformation is minimized and only the Fermi energy position is modified.

  10. Ab initio simulations of pseudomorphic silicene and germanene bidimensional heterostructures

    NASA Astrophysics Data System (ADS)

    Debernardi, Alberto; Marchetti, Luigi

    2016-06-01

    Among the novel two-dimensional (2D) materials, silicene and germanene, which are two honeycomb crystal structures composed of a monolayer of Si and Ge, respectively, have attracted the attention of material scientists because they combine the advantages of the new 2D ultimate-scaled electronics with their compatibility with industrial processes presently based on Si and Ge. We envisage pseudomorphic lateral heterostructures based on ribbons of silicene and germanene, which are the 2D analogs of conventional 3D Si/Ge superlattices and quantum wells. In spite of the considerable lattice mismatch (˜4 % ) between free-standing silicene and germanene, our ab initio simulations predict that, considering striped 2D lateral heterostructures made by alternating silicene and germanene ribbons of constant width, the silicene/germanene junction remains pseudomorphic—i.e., it maintains lattice-matched edges—up to critical ribbon widths that can reach some tens of nanometers. Such critical widths are one order of magnitude larger than the critical thickness measured in 3D pseudomorphic Si/Ge heterostructures and the resolution of state-of-the-art lithography, thus enabling the possibility of lithography patterned silicene/germanene junctions. We computed how the strain produced by the pseudomorphic growth modifies the crystal structure and electronic bands of the ribbons, providing a mechanism for band-structure engineering. Our results pave the way for lithography patterned lateral heterostructures that can serve as the building blocks of novel 2D electronics.

  11. Graphene-polymer multilayer heterostructure for terahertz metamaterials

    NASA Astrophysics Data System (ADS)

    Xu, Zaiquan; Chen, Caiyun; Wu, Steve Q. Y.; Wang, Bing; Teng, Jinghua; Zheng, Chao; Bao, Qiaoliang

    2013-12-01

    The optical response and plasmon coupling between graphene sheets for graphene/polymer multilayer heterostructures with controlled separation were systematically investigated. Anomalous transmission of light was experimentally observed in mid-infrared range. The position of the broad passband in the transmission spectra was observed to red-shift with the increase of the number of layers.

  12. CNx/Si thin heterostructures for miniaturized temperature sensors

    NASA Astrophysics Data System (ADS)

    Simeonov, S.; Szekeres, A.; György, E.; Mihailescu, I. N.; Perrone, A.

    2004-05-01

    CNx/Si thin heterostructures were synthesized on Si <111> substrates by XeCl* excimer laser (λ=308 nm, τFWHM≅30 ns) ablation of nuclear grade graphite targets in 5 Pa nitrogen at room temperature. We investigated the current-voltage and capacitance-voltage characteristics of heterostructures obtained at 77 and 300 K. We monitored their conductance and capacitance as a function of the bias voltage applied, in the 100 Hz-1 MHz frequency range. Our results revealed the formation of deep localized electron states both inside the thin CNx films and at the CNx/Si substrate interface. The investigations evidenced that conduction through the CNx/Si thin heterostructure is of trap-assisted tunneling type. The experimental studies show quite a large decrease in capacitance and increase in conductance with the increase of applied frequency. The capacitance of the CNx/Si thin heterostructures increases with a decrease of the temperature. All the results support the potential development of new types of high sensitivity temperature sensors.

  13. Synthesis and magnetic properties of manganite multiple heterostructure nanoribbons.

    PubMed

    Yu, Jiangying; Huang, Kai; Wu, Heyun; Li, Ping

    2012-09-14

    The fabrication and applications of two-dimensional complex oxide heterostructures have gained great attention. However, the achievement of these materials in one-dimensional form with multiple interfaces is still elusive. Here, we report the growth of manganite CaMn(3)O(6)/CaMn(2)O(4) heterostructure nanoribbons via the use of CaMnO(3) powders as the precursor for the molten-salt process. In contrast with the antiferromagnetism in CaMn(3)O(6) and CaMn(2)O(4) in the bulk, magnetization measurements indicate the coexistence of a ferromagnetic phase with a spin-glass-like component in CaMn(3)O(6)/CaMn(2)O(4) heterostructure nanoribbons. An asymmetric magnetization hysteresis loop observed in the applied magnetic field H≤ 3 T is attributed to the coupling between the antiferromagnetic phase and the ferromagnetic or spin-glass-like phase in CaMn(3)O(6)/CaMn(2)O(4) heterostructure nanoribbons.

  14. FAST TRACK COMMUNICATION: Escher-like quasiperiodic heterostructures

    NASA Astrophysics Data System (ADS)

    Barriuso, A. G.; Monzón, J. J.; Sánchez-Soto, L. L.; Costa, A. F.

    2009-05-01

    Quasiperiodic heterostructures present unique structural, electronic and vibrational properties, connected to the existence of incommensurate periods. We go beyond previous schemes, such as Fibonacci or Thue-Morse, based on substitutional sequences, by introducing construction rules generated by tessellations of the unit disc by regular polygons. We explore some of the properties exhibited by these systems.

  15. Voltage-controlled ferromagnetism and magnetoresistance in LaCoO3/SrTiO3 heterostructures

    NASA Astrophysics Data System (ADS)

    Hu, Chengqing; Park, Keun Woo; Posadas, Agham; Jordan-Sweet, Jean L.; Demkov, Alexander A.; Yu, Edward T.

    2013-11-01

    A LaCoO3/SrTiO3 heterostructure grown on Si (001) is shown to provide electrically switchable ferromagnetism, a large, electrically tunable magnetoresistance, and a vehicle for achieving and probing electrical control over ferromagnetic behavior at submicron dimensions. Fabrication of devices in a field-effect transistor geometry enables application of a gate bias voltage that modulates strain in the heterostructure via the converse piezoelectric effect in SrTiO3, leading to an artificial inverse magnetoelectric effect arising from the dependence of ferromagnetism in the LaCoO3 layer on strain. Below the Curie temperature of the LaCoO3 layer, this effect leads to modulation of resistance in LaCoO3 as large as 100%, and magnetoresistance as high as 80%, both of which arise from carrier scattering at ferromagnetic-nonmagnetic interfaces in LaCoO3. Finite-element numerical modeling of electric field distributions is used to explain the dependence of carrier transport behavior on gate contact geometry, and a Valet-Fert transport model enables determination of spin polarization in the LaCoO3 layer. Piezoresponse force microscopy is used to confirm the existence of piezoelectric response in SrTiO3 grown on Si (001). It is also shown that this structure offers the possibility of achieving exclusive-NOR logic functionality within a single device.

  16. Orbital Reconstruction Enhanced Exchange Bias in La0.6Sr0.4MnO3/Orthorhombic YMnO3 Heterostructures

    PubMed Central

    Zheng, Dongxing; Jin, Chao; Li, Peng; Wang, Liyan; Feng, Liefeng; Mi, Wenbo; Bai, Haili

    2016-01-01

    The exchange bias in ferromagnetic/multiferroic heterostructures is usually considered to originate from interfacial coupling. In this work, an orbital reconstruction enhanced exchange bias was discovered. As La0.6Sr0.4MnO3 (LSMO) grown on YMnO3 (YMO) suffers a tensile strain (a > c), the doubly degenerate eg orbital splits into high energy 3z2 − r2 and low energy x2 − y2 orbitals, which makes electrons occupy the localized x2 − y2 orbital and leads to the formation of antiferromagnetic phase in LSMO. The orbital reconstruction induced antiferromagnetic phase enhances the exchange bias in the LSMO/YMO heterostructures, lightening an effective way for electric-field modulated magnetic moments in multiferroic magnetoelectric devices. PMID:27090614

  17. Doping and musculoskeletal system: short-term and long-lasting effects of doping agents.

    PubMed

    Nikolopoulos, Dimitrios D; Spiliopoulou, Chara; Theocharis, Stamatios E

    2011-10-01

    Doping is a problem that has plagued the world of competition and sports for ages. Even before the dawn of Olympic history in ancient Greece, competitors have looked for artificial means to improve athletic performance. Since ancient times, athletes have attempted to gain an unfair competitive advantage through the use of doping substances. A Prohibited List of doping substances and methods banned in sports is published yearly by the World Anti-Doping Agency. Among the substances included are steroidal and peptide hormones and their modulators, stimulants, glucocorticosteroids, β₂-agonists, diuretics and masking agents, narcotics, and cannabinoids. Blood doping, tampering, infusions, and gene doping are examples of prohibited methods indicated on the List. Apart from the unethical aspect of doping, as it abrogates fair-play's principle, it is extremely important to consider the hazards it presents to the health and well-being of athletes. The referred negative effects for the athlete's health have to do, on the one hand, by the high doses of the performance-enhancing agents and on the other hand, by the relentless, superhuman strict training that the elite or amateur athletes put their muscles, bones, and joints. The purpose of this article is to highlight the early and the long-lasting consequences of the doping abuse on bone and muscle metabolism.

  18. Elastic and piezoelectric properties of zincblende and wurtzite crystalline nanowire heterostructures.

    PubMed

    Boxberg, Fredrik; Søndergaard, Niels; Xu, H Q

    2012-09-04

    The elastic and piezoelectric properties of zincblende and wurtzite crystalline InAs/InP nanowire heterostructures have been studied using electro-elastically coupled continuum elasticity theory. A comprehensive comparison of strains, piezoelectric potentials and piezoelectric fields in the two crystal types of nanowire heterostructures is presented. For each crystal type, three different forms of heterostructures-core-shell, axial superlattice, and quantum dot nanowire heterostructures-are considered. In the studied nanowire heterostructures, the principal strains are found to be insensitive to the change in the crystal structure. However, the shear strains in the zincblende and wurtzite nanowire heterostructures can be very different. All the studied nanowire heterostructures are found to exhibit a piezoelectric field along the nanowire axis. The piezoelectric field is in general much stronger in a wurtzite nanowire heterostructure than in its corresponding zincblende heterostructure. Our results are expected to be particularly important for analyzing and understanding the properties of epitaxially grown nanowire heterostructures and for applications in nanowire electronics, optoelectronics, and biochemical sensing.

  19. Field effect and charge injection in hybrid nanorod heterostructure

    NASA Astrophysics Data System (ADS)

    Kwok, H. L.; Li, Weicong

    2012-05-01

    Recent studies on organic/inorganic heterostructures have indicated that interface morphology plays an important role in determining the charge transport properties. Hybrid heterostructure light-emitting diodes mixing donor and acceptor semiconductors appear to offer the best opportunity in achieving superior performance and there are indications that a network of percolated heterojunctions can be very effective in promoting light absorption/emission. Charge transport however can be more complex in a nanorod heterostructure as the charge flow at the interface will depend on the injection mechanism(s) as well as the interface field strength. In this work, we examined the current density-voltage characteristics of the hybrid NPB (N, N‧-di(napth-2-yl)-N-N‧-diphenylbenzidine)-ZnO nanorod heterostructure and attempted to identify the transport mechanism(s) close to the tips of the nanorods. Our study indicated that charge flow essentially followed the conventional pattern changing from a linear regime (emission-limited) to a quadratic regime (space-charge limited) and possibly to a rapid rise in current (trap-free injection). Detailed evaluation of the changes in the reported conductivity data further suggested the conduction mechanism (up to a p-layer thickness of 400 nm) was dominated by space-charge limited current in the NPB layer, which also resulted in substantial charge pile-up near the tips of the nanorods. An interface charge layer responsible for the barrier height modification effect could be used to explain the observed “blue-shift” in the emission spectra of the nanorod heterostructure light-emitting diode as reported by Sun et al. [2].

  20. Ultrafast magnetization dynamics in ferromagnetic thin films and heterostructures

    NASA Astrophysics Data System (ADS)

    Guan, Yongfeng

    With the development of magnetic information storage technology, especially when data rates approach 1 GHz and above, new insight into the magnetization dynamics in ferromagnetic materials becomes a more pressing need. In this thesis, our recent studies of the ultrafast magnetization dynamics in ferromagnetic thin films and heterostructures using various measurement techniques are presented. We present our static transmission-mode x-ray magnetic circular dichroism (XMCD) characterization of element-specific moments in ferromagnetic thin films. Sum rules analysis are further used to extract the projected element-specific spin and orbital moments. A very low projected Tb moment in the 6% Tb-doped Ni81Fe19 thin film, which nonetheless reverses with low applied fields, indicates a sperimagnetic alignment with respect to the Fe and Ni elements in the alloy. The nearly unchanged orbital-to-spin moment ratio of Fe over the measured range of 0 ≤ x ≤ 0.15 in the Fe1- xVx thin films, compatible with known magnetization behavior as well as spectroscopic splitting g-factor data in the alloy by means of a two-sublattice model, confirms that the very low Gilbert damping attained through the introduction of V into epitaxial Fe1-xVx thin films does not result from the reduction of orbital moment content in the alloy. We also present our synchrotron-based development of time-resolved x-ray magnetic circular dichroism (TR-XMCD) technique. With this technique, we have demonstrated the first element- and layer-resolved magnetization dynamics with temporal resolution of 2--5 ps and angular resolution down to 0.1°. Coupled motion of Fe and Ni moments is verified in Ni81Fe 19 thin film, indicating a strong exchange coupling between Fe and Ni in the alloy. The influence of weak ferromagnetic interlayer coupling, difficult to identify in conventional FMR measurement, is clearly revealed in a pseudo-spin-valve structure of Ni81Fe19/Cu/Co93Zr7. Lagged phase behavior is observed between

  1. Magnetization switching through giant spin-orbit torque in the magnetically doped topological insulators

    NASA Astrophysics Data System (ADS)

    Fan, Yabin

    2015-03-01

    Recent demonstrations of magnetization switching induced by in-plane current in heavy metal/ferromagnetic heterostructures (HMFHs) have drawn great interest to spin torques arising from the large spin-orbit coupling (SOC)... in heavy metals. Considering the intrinsic strong SOC, topological insulators (TIs) are expected to be promising candidates for exploring spin-orbit torque (SOT)-related physics.... In this talk, we report the magnetization switching through giant SOT in the magnetically doped TI structures. In particular, we demonstrate the magnetization switching in a chromium-doped TI bilayer heterostructure, and the current induced SOT possibly has contribution from the spin-momentum locked surface states of TI. The critical current density for switching is below 8.9 × 104A/cm2 at 1.9 K. Moreover, we use second-harmonic methods to measure the spin torque efficiencies which are more than three orders of magnitude larger than those reported in heavy metals. The giant SOT and efficient current-induced magnetization switching exhibited by the bilayer heterostructure may lead to innovative spintronics applications such as ultralow power dissipation memory and logic devices. We are grateful to the support from the DARPA Meso program under Contract No. N66001-12-1-4034 and N66001-11-1-4105. We also acknowledge the support from the Western Institute of Nanoelectronics (WIN) and the support from the FAME center.

  2. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    NASA Astrophysics Data System (ADS)

    Hajłasz, M.; Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S.; Gravesteijn, D. J.; Rietveld, F. J. R.; Schmitz, J.

    2014-06-01

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  3. Rational growth of branched nanowire heterostructures with synthetically encoded properties and function

    PubMed Central

    Jiang, Xiaocheng; Tian, Bozhi; Xiang, Jie; Qian, Fang; Zheng, Gengfeng; Wang, Hongtao; Mai, Liqiang; Lieber, Charles M.

    2011-01-01

    Branched nanostructures represent unique, 3D building blocks for the “bottom-up” paradigm of nanoscale science and technology. Here, we report a rational, multistep approach toward the general synthesis of 3D branched nanowire (NW) heterostructures. Single-crystalline semiconductor, including groups IV, III–V, and II–VI, and metal branches have been selectively grown on core or core/shell NW backbones, with the composition, morphology, and doping of core (core/shell) NWs and branch NWs well controlled during synthesis. Measurements made on the different composition branched NW structures demonstrate encoding of functional p-type/n-type diodes and light-emitting diodes (LEDs) as well as field effect transistors with device function localized at the branch/backbone NW junctions. In addition, multibranch/backbone NW structures were synthesized and used to demonstrate capability to create addressable nanoscale LED arrays, logic circuits, and biological sensors. Our work demonstrates a previously undescribed level of structural and functional complexity in NW materials, and more generally, highlights the potential of bottom-up synthesis to yield increasingly complex functional systems in the future. PMID:21730174

  4. Sharp Fe/MgO/Ge(001) epitaxial heterostructures for tunneling junctions

    SciTech Connect

    Petti, D.; Cantoni, M.; Rinaldi, C.; Brivio, S.; Bertacco, R.; Gazquez Alabart, Jaume; Varela del Arco, Maria

    2011-01-01

    We report on the growth of epitaxial Fe/MgO/Ge(001) heterostructures by molecular beam epitaxy. The lowest oxidation and highest sharpness of the MgO/Ge interface, corresponding to a transition layer on the order of one Ge unit cell, is obtained for room temperature growth of the MgO layer followed by annealing in a vacuum at 500 C. In these conditions, the MgO layer grows epitaxially on Ge(001) with the [110] direction parallel to the [100] direction of Ge, at variance with the cube-on-cube growth on Si(001) and GaAs(001). However, in some cases, the cube-on-cube growth mode of MgO on Ge competes with the mode involving a 45{sup o} rotation, as revealed by transmission electron microscopy and photoelectron diffraction data on MgO films grown at 300 C without postannealing, and on p-doped Ge substrates. For the Fe overlayer, in all the cases reported, room temperature growth followed by annealing up to 200 C gives rise to a sharp interface and the well-known 45{sup o} rotation of the Fe lattice with respect to the MgO lattice.

  5. High frequency GaAlAs modulator and photodetector for phased array antenna applications

    NASA Technical Reports Server (NTRS)

    Claspy, P. C.; Chorey, C. M.; Hill, S. M.; Bhasin, K. B.

    1989-01-01

    A waveguide Mach-Zehnder electro-optic modulator and an interdigitated photoconductive detector designed to operate at 820 nm, fabricated on different GaAlAs/GaAs heterostructure materials, are being investigated for use in optical interconnects in phased array antenna systems. Measured optical attenuation effects in the modulator are discussed and the observed modulation performance up to 1 GHz is presented. Measurements of detector frequency response are described and results presented.

  6. High frequency GaAlAs modulator and photodetector for phased array antenna applications

    NASA Technical Reports Server (NTRS)

    Claspy, P. C.; Chorey, C. M.; Hill, S. M.; Bhasin, K. B.

    1988-01-01

    A waveguide Mach-Zehnder electro-optic modulator and an interdigitated photoconductive detector designed to operate at 820 nm, fabricated on different GaAlAs/GaAs heterostructure materials, are being investigated for use in optical interconnects in phased array antenna systems. Measured optical attenuation effects in the modulator are discussed and the observed modulation performance up to 1 GHz is presented. Measurements of detector frequency response are described and results presented.

  7. Optics and Optoelectronics of Two-dimensional Semiconducting Monolayers and Heterostructures

    NASA Astrophysics Data System (ADS)

    Ross, Jason Solomon

    Until recently, the physics of truly two-dimensional (2D) excitons could only be explored theoretically. Following the discovery of graphene, many 2D materials were quickly identified and isolated, one system being the semiconducting Group VI-B transition metal dichalcogenides (TMDs). These semiconductors are the first air-stable materials that are atomically thin (three atomics thick), and yet can be produced in arbitrarily large lateral sheets. They have a direct band gap in which confinement leads to large spatial overlap of electrons and holes resulting in strongly coupled excitonic transitions that dominate light-matter interactions. The direct band-gap of monolayer TMDs occurs at the corners of the hexagonal Brillouin zone, referred to as the K valleys. Entirely unique to these materials, excitons in adjacent K valleys selectively couple to light of opposite circular polarization, i.e. the K (K') valley is selective to right (left) circularly polarized photons. This property offers the possible realization of novel devices that will manipulate the valley index, known as valleytronics. Further, creating a stacked heterostructure (HS) of two TMD monolayers of different molecular species can exhibit type-II band alignment leading to the first atomically sharp built-in p-n junction and a bright interlayer exciton with long lifetimes. Being flat 2D sheets, it is easy to couple these materials to nearby systems such as microfabricated electrodes and photonic crystal cavities allowing for unique modulation and device schemes. Here, I employ both optical and electronic techniques to study the unique physics of 2D excitons in TMDs as well as demonstrate some of their first optoelectronic and valleytronic devices. The most notable achievement is perhaps the first demonstrations of both atomically thin and 2D heterostructure light emitting diodes and photovoltaic devices. Other breakthroughs include the first demonstration of exciton charging tunability in a 2D system

  8. Characteristics of lateral and hybrid heterostructures based on monolayer MoS2: a computational study.

    PubMed

    Feng, Li-Ping; Su, Jie; Liu, Zheng-Tang

    2017-02-08

    Novel MoS2/(MX2)n lateral and (MoS2)/(MX2)n-BN hybrid heterostructures have been designed on monolayer MoS2 to extend its applications. The electronic, interfacial and optical properties of the lateral and hybrid heterostructures have been investigated comparatively using first-principles calculations. It was found that the charge distributions, band gaps, band levels, electrostatic potentials, and optical absorption of the MoS2/(MX2)n lateral heterostructures depend greatly on the width n of MX2, irrespective of the size of the lateral heterostructures. The CBM states of the MoS2/(MX2)n lateral heterostructures dominated by the dz(2) orbitals are localized around MoS2, whereas the VBM states of the MoS2/(MX2)n lateral heterostructures are dominated by the MX2 region. Through regulating the width n of the MX2 region in the MoS2/(MX2)n lateral heterostructures, the optical absorption of the lateral heterostructures under visible light can be increased, and the CBM and VBM states of the lateral heterostructures can be located above the hydrogen reduction potential and below the water oxidation potential, respectively. The similar characteristics were observed in the MoS2/(MX2)n-BN hybrid heterostructures, indicating that BN is a good substrate for the MoS2/(MX2)n lateral heterostructures. The analysis implies that forming the lateral and hybrid heterostructures is an effective way to extend the applications of monolayer MoS2 in photocatalytic water and photovoltaic devices.

  9. Metamorphic InAsSb/AlInAsSb Heterostructures for Optoelectronic Applications

    DTIC Science & Technology

    2013-03-20

    REPORT Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications 14. ABSTRACT 16. SECURITY CLASSIFICATION OF: Metamorphic ...TELEPHONE NUMBER Gregory Belenky 631-632-8397 3. DATES COVERED (From - To) Standard Form 298 (Rev 8/98) Prescribed by ANSI Std. Z39.18 - Metamorphic InAsSb...AlInAsSb heterostructures for optoelectronic applications Report Title ABSTRACT Metamorphic heterostructures containing bulk InAs1?xSbx layers and

  10. Molecular enhancement of ferromagnetism in GaAs /GaMnAs heterostructures

    NASA Astrophysics Data System (ADS)

    Carmeli, Itai; Bloom, Francisco; Gwinn, E. G.; Kreutz, T. C.; Scoby, Cheyne; Gossard, A. C.; Ray, S. G.; Naaman, Ron

    2006-09-01

    The authors investigate effects of chemisorption of polar organic molecules onto ferromagnetic GaAs /GaMnAs heterostructures. The chemisorbed heterostructures exhibit striking anisotropic enhancement of the magnetization, while GaAs substrates that are physisorbed with the same molecules show no change in magnetic properties. Thus the enhanced magnetism of the chemisorbed heterostructures reflects changes in spin alignment that arise from surface bonding of the organic monolayer.

  11. Synthesis and applications of heterostructured semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Khon, Elena

    Semiconductor nanocrystals (NCs) have been of great interest to researchers for several decades due to their unique optoelectronic properties. These nanoparticles are widely used for a variety of different applications. However, there are many unresolved issues that lower the efficiency and/or stability of devices which incorporate these NCs. Our research is dedicated to addressing these issues by identifying potential problems and resolving them, improving existing systems, generating new synthetic strategies, and/or building new devices. The general strategies for the synthesis of different nanocrystals were established in this work, one of which is the colloidal growth of gold domains onto CdS semiconductor nanocrystals. Control of shape and size was achieved simply by adjusting the temperature and the time of the reaction. Depending on the exact morphology of Au and CdS domains, fabricated nano-composites can undergo evaporation-induced self-assembly onto a substrate, which is very useful for building devices. CdS/Au heterostructures can assemble in two different ways: through end-to-end coupling of Au domains, resulting in the formation of one-dimensional chains; and via side-by-side packing of CdS nanorods, leading to the onset of two-dimensional superlattices. We investigated the nature of exciton-plasmon interactions in Au-tipped CdS nanorods using femtosecond transient absorption spectroscopy. The study demonstrated that the key optoelectronic properties of electrically coupled metal and semiconductor domains are significantly different from those observed in systems with weak inter-domain coupling. In particular, strongly-coupled nanocomposites promote mixing of electronic states at semiconductor-metal domain interfaces, which causes a significant suppression of both plasmon and exciton carrier excitations. Colloidal QDs are starting to replace organic molecules in many different applications, such as organic light emmiting diods (OLEDs), due to their

  12. Global and local superconductivity in boron-doped granular diamond.

    PubMed

    Zhang, Gufei; Turner, Stuart; Ekimov, Evgeny A; Vanacken, Johan; Timmermans, Matias; Samuely, Tomás; Sidorov, Vladimir A; Stishov, Sergei M; Lu, Yinggang; Deloof, Bart; Goderis, Bart; Van Tendeloo, Gustaaf; Van de Vondel, Joris; Moshchalkov, Victor V

    2014-04-02

    Strong granularity-correlated and intragrain modulations of the superconducting order parameter are demonstrated in heavily boron-doped diamond situated not yet in the vicinity of the metal-insulator transition. These modulations at the superconducting state (SC) and at the global normal state (NS) above the resistive superconducting transition, reveal that local Cooper pairing sets in prior to the global phase coherence.

  13. The stability and the electronic structure of ultrathin Bi/Bi2Se3 heterostructure

    NASA Astrophysics Data System (ADS)

    Liu, X.; Du, X.; Huang, G. Q.

    2016-12-01

    The stability and the electronic structure of ultrathin Bi/Bi2Se3 heterostructure are studied from density-functional theory by including spin-orbit coupling. Our calculations show that the thinnest and dynamically stable heterostructure is one bilayer Bi deposited on Bi2Se3 with the thickness of two quintuple layers. Due to charge transfer and the strong hybridize effect at the interface, the band structure of ultrathin heterostructure make a large change, but the Dirac-like surface states persist. Our findings propose the possibility to engineer heterostructure to obtain ultrathin topological materials.

  14. Nonvolatile transtance change random access memory based on magnetoelectric P(VDF-TrFE)/Metglas heterostructures

    NASA Astrophysics Data System (ADS)

    Lu, Peipei; Shang, Dashan; Shen, Jianxin; Chai, Yisheng; Yang, Chuansen; Zhai, Kun; Cong, Junzhuang; Shen, Shipeng; Sun, Young

    2016-12-01

    Transtance change random access memory (TCRAM) is a type of nonvolatile memory based on the nonlinear magnetoelectric coupling effects of multiferroics. In this work, ferroelectric P(VDF-TrFE) thin films were prepared on Metglas foil substrates by the sol-gel technique to form multiferroic heterostructures. The magnetoelectric voltage coefficient of the heterostructure can be switched reproducibly to different levels between positive and negative values by applying selective electric-field pulses. Compared with bulk multiferroic heterostructures, the polarization switching voltage was reduced to 7 V. Our facile technological approach enables this organic magnetoelectric heterostructure as a promising candidate for the applications in multilevel TCRAM devices.

  15. Germanium-doped crystalline silicon: Effects of germanium doping on boron-related defects

    NASA Astrophysics Data System (ADS)

    Zhu, Xiaodong; Yu, Xuegong; Yang, Deren

    2014-09-01

    Recently it has been recognized that germanium (Ge) doping can be used for microelectronics and photovoltaic devices. This article reviews the recent results about the effects of Ge doping on boron-related defects in crystalline silicon. Behavior of Ge interacting with the acceptor dopants is also discussed therein. In addition, the article provides a comprehensive review on the effect of Ge doping to the formation of iron-boron pairs and boron-oxygen defects that is responsible for the light induced degradation (LID) of the carrier lifetime. The improvement silicon-based solar cells application from Ge doping is discussed as well, including the increment of cell efficiency and the power output of corresponding modules under sunlight illumination.

  16. Subnanometer scale characterization of III-V-heterostructures

    SciTech Connect

    Lakner, H.

    1996-12-31

    Heterostructures based on III-V semiconductors play a dominant role for the production of optoelectronic /1/ and electronic high-speed or high-frequency /2/ devices. The necessary band-gap engineering is achieved by optimized growth procedures which allow to change the chemical composition and the crystal structure (e.g., strain or ordering) on the subnanometer scale. The evaluation of individual heterointerfaces with respect to chemical composition and crystal structure requires characterization techniques which offer the necessary high spatial resolution. Scanning transmission electron microscopy (STEM) offers several of such quantitative techniques. It is the intention of this paper to demonstrate the capabilities of STEM in the subnanometer characterization of III-V-heterostructures based on InP-substrates. Additionally, the data obtained from nanocharacterization can be correlated to device performance.

  17. Double perovskite heterostructures: magnetism, Chern bands, and Chern insulators.

    PubMed

    Cook, Ashley M; Paramekanti, Arun

    2014-08-15

    Experiments demonstrating the controlled growth of oxide heterostructures have raised the prospect of realizing topologically nontrivial states of correlated electrons in low dimensions. Here, we study heterostructures consisting of {111} bilayers of double perovskites separated by inert band insulators. In bulk, these double perovskites have well-defined local moments interacting with itinerant electrons leading to high temperature ferromagnetism. Incorporating spin-orbit coupling in the two-dimensional honeycomb geometry of a {111} bilayer, we find a rich phase diagram with tunable ferromagnetic order, topological Chern bands, and a C=±2 Chern insulator regime. Our results are of broad relevance to oxide materials such as Sr_{2}FeMoO_{6}, Ba_{2}FeReO_{6}, and Sr_{2}CrWO_{6}.

  18. Band structure engineering in topological insulator based heterostructures.

    PubMed

    Menshchikova, T V; Otrokov, M M; Tsirkin, S S; Samorokov, D A; Bebneva, V V; Ernst, A; Kuznetsov, V M; Chulkov, E V

    2013-01-01

    The ability to engineer an electronic band structure of topological insulators would allow the production of topological materials with tailor-made properties. Using ab initio calculations, we show a promising way to control the conducting surface state in topological insulator based heterostructures representing an insulator ultrathin films on the topological insulator substrates. Because of a specific relation between work functions and band gaps of the topological insulator substrate and the insulator ultrathin film overlayer, a sizable shift of the Dirac point occurs resulting in a significant increase in the number of the topological surface state charge carriers as compared to that of the substrate itself. Such an effect can also be realized by applying the external electric field that allows a gradual tuning of the topological surface state. A simultaneous use of both approaches makes it possible to obtain a topological insulator based heterostructure with a highly tunable topological surface state.

  19. Novel heterostructured Ge nanowires based on polytype transformation.

    PubMed

    Vincent, Laetitia; Patriarche, Gilles; Hallais, Géraldine; Renard, Charles; Gardès, Cyrille; Troadec, David; Bouchier, Daniel

    2014-08-13

    We report on a strain-induced phase transformation in Ge nanowires under external shear stresses. The resulted polytype heterostructure may have great potential for photonics and thermoelectric applications. ⟨111⟩-oriented Ge nanowires with standard diamond structure (3C) undergo a phase transformation toward the hexagonal diamond phase referred as the 2H-allotrope. The phase transformation occurs heterogeneously on shear bands along the length of the nanowire. The structure meets the common phenomenological criteria of a martensitic phase transformation. This point is discussed to initiate an on going debate on the transformation mechanisms. The process results in unprecedented quasiperiodic heterostructures 3C/2H along the Ge nanowire. The thermal stability of those 2H domains is also studied under annealing up to 650 °C by in situ TEM.

  20. Fluorescent nanowire heterostructures as a versatile tool for biology applications.

    PubMed

    Adolfsson, Karl; Persson, Henrik; Wallentin, Jesper; Oredsson, Stina; Samuelson, Lars; Tegenfeldt, Jonas O; Borgström, Magnus T; Prinz, Christelle N

    2013-10-09

    Nanowires are increasingly used in biology, as sensors, as injection devices, and as model systems for toxicity studies. Currently, in situ visualization of nanowires in biological media is done using organic dyes, which are prone to photobleaching, or using microscopy methods which either yield poor resolution or require a sophisticated setup. Here we show that inherently fluorescent nanowire axial heterostructures can be used to localize and identify nanowires in cells and tissue. By synthesizing GaP-GaInP nanowire heterostructures, with nonfluorescent GaP segments and fluorescent GaInP segments, we created a barcode labeling system enabling the distinction of the nanowire morphological and chemical properties using fluorescence microscopy. The GaInP photoluminescence stability, combined with the fact that the nanowires can be coated with different materials while retaining their fluorescence, make these nanowires promising tools for biological and nanotoxicological studies.