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Sample records for modulation doped heterostructures

  1. Electron mobility in modulation-doped heterostructures

    NASA Technical Reports Server (NTRS)

    Walukiewicz, W.; Ruda, H. E.; Lagowski, J.; Gatos, H. C.

    1984-01-01

    A model for electron mobility in a two-dimensional electron gas confined in a triangular well was developed. All major scattering processes (deformation potential and piezoelectric acoustic, polar optical, ionized impurity, and alloy disorder) were included, as well as intrasubband and intersubband scattering. The model is applied to two types of modulation-doped heterostructures, namely GaAs-GaAlAs and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As. In the former case, phonons and remote ionized impurities ultimately limit the mobility, whereas in the latter, alloy disorder is a predominant scattering process at low temperatures. The calculated mobilities are in very good agreement with recently reported experimental characteristics for both GaAs-Ga(1-x)Al(x)As and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As modulation-doped heterostructures.

  2. Electron mobility in modulation-doped heterostructures

    NASA Technical Reports Server (NTRS)

    Walukiewicz, W.; Ruda, H. E.; Lagowski, J.; Gatos, H. C.

    1984-01-01

    A model for electron mobility in a two-dimensional electron gas confined in a triangular well was developed. All major scattering processes (deformation potential and piezoelectric acoustic, polar optical, ionized impurity, and alloy disorder) were included, as well as intrasubband and intersubband scattering. The model is applied to two types of modulation-doped heterostructures, namely GaAs-GaAlAs and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As. In the former case, phonons and remote ionized impurities ultimately limit the mobility, whereas in the latter, alloy disorder is a predominant scattering process at low temperatures. The calculated mobilities are in very good agreement with recently reported experimental characteristics for both GaAs-Ga(1-x)Al(x)As and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As modulation-doped heterostructures.

  3. Analysis of energy states in modulation doped multiquantum well heterostructures

    NASA Technical Reports Server (NTRS)

    Ji, G.; Henderson, T.; Peng, C. K.; Huang, D.; Morkoc, H.

    1990-01-01

    A precise and effective numerical procedure to model the band diagram of modulation doped multiquantum well heterostructures is presented. This method is based on a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. It can be used rather easily in any arbitrary modulation-doped structure. In addition to confined energy subbands, the unconfined states can be calculated as well. Examples on realistic device structures are given to demonstrate capabilities of this procedure. The numerical results are in good agreement with experiments. With the aid of this method the transitions involving both the confined and unconfined conduction subbands in a modulation doped AlGaAs/GaAs superlattice, and in a strained layer InGaAs/GaAs superlattice are identified. These results represent the first observation of unconfined transitions in modulation doped multiquantum well structures.

  4. Analysis of energy states in modulation doped multiquantum well heterostructures

    NASA Technical Reports Server (NTRS)

    Ji, G.; Henderson, T.; Peng, C. K.; Huang, D.; Morkoc, H.

    1990-01-01

    A precise and effective numerical procedure to model the band diagram of modulation doped multiquantum well heterostructures is presented. This method is based on a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. It can be used rather easily in any arbitrary modulation-doped structure. In addition to confined energy subbands, the unconfined states can be calculated as well. Examples on realistic device structures are given to demonstrate capabilities of this procedure. The numerical results are in good agreement with experiments. With the aid of this method the transitions involving both the confined and unconfined conduction subbands in a modulation doped AlGaAs/GaAs superlattice, and in a strained layer InGaAs/GaAs superlattice are identified. These results represent the first observation of unconfined transitions in modulation doped multiquantum well structures.

  5. Photo-induced Modulation Doping in Graphene/Boron nitride Heterostructures

    NASA Astrophysics Data System (ADS)

    Velasco, Jairo, Jr.; Ju, Long; Hwang, Edwin; Kahn, Salman; Nosiglia, Casey; Tsai, Hsin-Zon; Yang, Wei; Zhang, Guangyu; Taniguchi, Takashi; Watanabe, Kenji; Zhang, Yuanbo; Crommie, Michael; Zettl, Alex; Wang, Feng

    2014-03-01

    Van der Waals heterostructures (VDH) provide an exciting new platform for materials engineering, where a variety of layered materials with different electrical, optical and mechanical responses can be stacked together to enable new physics and novel functionalities. We report an emerging optoelectronic phenomenon (i.e. photo-induced modulation doping) in the graphene-boron nitride VDH (G/BN heterostructure). We find it enables flexible and repeatable writing and erasing of charge doping in graphene with optical light. We show that the photo-induced modulation doping maintains the remarkable carrier mobility of the G/BN heterostructure, and it can be used to generate spatially varying doping profiles like pn junctions. Our work contributes towards understanding light matter interactions in VDHs, and introduces a simple technique for creating inhomogeneous doping in high mobility graphene devices. J. Velasco Jr. acknowledges support from UC President's Postdoctoral Fellowship.

  6. Investigating the thermal stability of electron transport properties in modulation-doped semiconductor heterostructure systems

    NASA Astrophysics Data System (ADS)

    Pilgrim, Ian; Scannell, Billy; See, Andrew; Montgomery, Rick; Morse, Peter; Fairbanks, Matt; Marlow, Colleen; Linke, Heiner; Farrer, Ian; Ritchie, David; Hamilton, Alex; Micolich, Adam; Eaves, Laurence; Taylor, Richard

    2013-03-01

    Since the 1950s, materials scientists have pursued the fabrication of solid-state heterostructure (HS) devices of sufficient purity to replicate electron interference effects originally observed in vacuum. The ultimate goal of HS engineering is to create a semiconductor ``billiard table'' in which electrons travel ballistically in a 2-D plane--that is, with scattering events minimized such that the electron's mean free path exceeds the device size. For the past two decades, the modulation-doped (MD) HS architecture has yielded devices supporting very high electron mobilities. In this architecture, ionized dopants are spatially removed from the plane of the electrons, such that their influence on electron trajectories is felt through presumably negligible small-angle scattering events. However, we observe that thermally induced charge redistribution in the doped layers of AlGaAs/GaAs and GaInAs/InP MD heterostructures significantly alters electron transport dynamics as measured by magnetoconductance fluctuations. This result demonstrates that small-angle scattering plays a far larger role than expected in influencing conduction properties. Funded by the Office of Naval Research, US Air Force, Australian Research Council, and Research Corporation for Science Advancement

  7. High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application

    NASA Astrophysics Data System (ADS)

    Abe, Masayuki; Kogushi, Noriaki; Ang, Kian Siong; Hofstetter, René; Manoj, Kumar; Retnam, Louis Nicholas; Wang, Hong; Ng, Geok Ing; Jin, Chon; Pavlidis, Dimitris

    Novel thermopiles based on modulation doped AlGaAs/InGaAs and AlGaN/GaN heterostructures are proposed and developed for the first time, for uncooled infrared FPA (Focal Plane Array) image sensor application. The high responsivity with the high speed response time are designed to 4,900V/W with 110µs for AlGaAs/InGaAs, and to 460V/W with 9µs for AlGaN/GaN thermopiles, respectively. Based on integrated HEMT-MEMS technology, the AlGaAs/InGaAs 32×32 matrix FPAs are fabricated to demonstrate its enhanced performances by black body measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled infrared FPA image sensor application.

  8. Modulation-Doped SrTiO3/SrTi1-xZrxO3 Heterostructures

    NASA Astrophysics Data System (ADS)

    Kajdos, Adam Paul

    surface reconstruction from (1x1) to (2x1) to c(4x4) is correlated with a change from mixed SrO/TiO2 to pure TiO2 surface termination. It is argued that optimal cation stoichiometry is achieved for growth conditions within the XRD-defined growth window that result in a c(4x4) surface lattice. The development of a doped perovskite oxide semiconductor with a suitable conduction band offset is then discussed as the next necessary step towards realizing modulation-doped heterostructures. The SrTixZr1-x O3 solid solution is investigated for this purpose, with a focus on optimizing cation stoichiometry to allow for controlled doping. In particular, the hybrid MBE growth of SrTixZr1-xO3 thin films is explored using a metal-organic precursor for Zr, zirconium tert-butoxide (ZTB). The successful generation of 2DEGs by modulation doping of SrTiO3 is then demonstrated in SrTiO3/La:SrTi0.95Zr0.05O 3 heterostructures, and the electronic structure is studied by Shubnikov-de Haas analysis using multiple-subband models.

  9. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    NASA Astrophysics Data System (ADS)

    Morrison, C.; Casteleiro, C.; Leadley, D. R.; Myronov, M.

    2016-09-01

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm2/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m0. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  10. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    SciTech Connect

    Morrison, C. Casteleiro, C.; Leadley, D. R.; Myronov, M.

    2016-09-05

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  11. Charge carrier relaxation in InGaAs-GaAs quantum wire modulation-doped heterostructures.

    PubMed

    Kondratenko, S V; Iliash, S A; Mazur, Yu I; Kunets, V P; Benamara, M; Salamo, G J

    2017-09-15

    The time dependencies of the carrier relaxation in modulation-doped InGaAs-GaAs low-dimensional structures with quantum wires have been studied as functions of temperature and light excitation levels. The photoconductivity (PC) relaxation follows a stretched exponent with decay constant, which depends on the morphology of InGaAs epitaxial layers, presence of deep traps, and energy disorder due to inhomogeneous distribution of size and composition. A hopping model, where electron tunnels between bands of localized states, gives appropriate interpretation for temperature-independent PC decay across the temperature range 150-290 K. At low temperatures (T < 150 K), multiple trapping-retrapping via 1D states of InGaAs quantum wires (QWRs), sub-bands of two-dimensional electron gas of modulation-doped n-GaAs spacers, as well as defect states in the GaAs environment are the dominant relaxation mechanism. The PC and photoluminescence transients for samples with different morphologies of the InGaAs nanostructures are compared. The relaxation rates are found to be largely dependent on energy disorder due to inhomogeneous distribution of strain, nanostructure size and composition, and piezoelectric fields in and around nanostructures, which have a strong impact on efficiency of carrier exchange between bands of the InGaAs QWRs, GaAs spacers, or wetting layers; presence of local electric fields; and deep traps.

  12. Charge carrier relaxation in InGaAs-GaAs quantum wire modulation-doped heterostructures

    NASA Astrophysics Data System (ADS)

    Kondratenko, S. V.; Iliash, S. A.; Mazur, Yu I.; Kunets, V. P.; Benamara, M.; Salamo, G. J.

    2017-09-01

    The time dependencies of the carrier relaxation in modulation-doped InGaAs-GaAs low-dimensional structures with quantum wires have been studied as functions of temperature and light excitation levels. The photoconductivity (PC) relaxation follows a stretched exponent with decay constant, which depends on the morphology of InGaAs epitaxial layers, presence of deep traps, and energy disorder due to inhomogeneous distribution of size and composition. A hopping model, where electron tunnels between bands of localized states, gives appropriate interpretation for temperature-independent PC decay across the temperature range 150-290 K. At low temperatures (T < 150 K), multiple trapping-retrapping via 1D states of InGaAs quantum wires (QWRs), sub-bands of two-dimensional electron gas of modulation-doped n-GaAs spacers, as well as defect states in the GaAs environment are the dominant relaxation mechanism. The PC and photoluminescence transients for samples with different morphologies of the InGaAs nanostructures are compared. The relaxation rates are found to be largely dependent on energy disorder due to inhomogeneous distribution of strain, nanostructure size and composition, and piezoelectric fields in and around nanostructures, which have a strong impact on efficiency of carrier exchange between bands of the InGaAs QWRs, GaAs spacers, or wetting layers; presence of local electric fields; and deep traps.

  13. Transparent Oxide Thin-Film Transistors Using n-(In2O3)0.9(SnO2)0.1/InGaZnO4 Modulation-Doped Heterostructures

    NASA Astrophysics Data System (ADS)

    Taniguchi, Satoshi; Yokozeki, Mikihiro; Ikeda, Masao; Suzuki, Toshi-kazu

    2011-04-01

    We investigated transparent oxide thin-film transistors (TFTs) using n-(In2O3)0.9(SnO2)0.1/InGaZnO4 (n-ITO/IGZO) modulation-doped heterostructures, which are effective in achieving high carrier mobilities. From transmittance measurements and UV photoemission spectroscopy, n-ITO/IGZO modulation-doped heterostructures are expected to realize the type-II energy band lineup, in which both the conduction band minimum and the valence band maximum of n-ITO are higher in energy than those of IGZO. Van der Pauw Hall measurements revealed Hall mobility enhancement and two-dimensional behavior of electrons at the n-ITO/IGZO interface. Using the n-ITO/IGZO modulation-doped heterostructures, we obtained TFTs with higher electron mobility than that of IGZO TFTs. We consider that modulation doping is a promising method for performance improvements of TFTs using transparent oxide semiconductors.

  14. Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

    NASA Astrophysics Data System (ADS)

    Khmissi, H.; Baira, M.; Sfaxi, L.; Bouzaïene, L.; Saidi, F.; Bru-Chevallier, C.; Maaref, H.

    2011-03-01

    Optical properties of InAs quantum dots (QDs) inserted in AlGaAs/GaAs modulation doped heterostructure are investigated. To study the effect of carrier transfer behavior on the luminescence of self-assembled quantum dots, a series of sample has been prepared using molecular beam epitaxy (Riber 32 system) in which we have varied the thickness separating the delta dopage and the InAs quantum dots layer. Photoluminescence spectra show the existence of two peaks that can be attributed to transition energies from the ground state (E1-HH1) and the first excited state (E2-HH2). Two antagonist effects have been observed, a blue shift of the emission energies result from electron transferred from the AlGaAs/GaAs heterojunction to the InAs quantum dots and a red shift caused by the quantum confined Stark effect due to the internal electric field existing In the AlGaAs/GaAs heterojunction.

  15. High-transconductance p-channel modulation-doped AlGaAs/GaAs heterostructure FET's

    NASA Astrophysics Data System (ADS)

    Hirano, Makoto; Oe, Kunishige; Yanagawa, Fumihiko

    1986-05-01

    p-channel modulation-doped AlGaAs-GaAs heterostructure FET's (p-HFET's) employing two-dimensional hole gas (2DHG) were fabricated under various geometrical device parameter conditions. The p-HFET characteristics were measured at 300 and 77 K for the following three device-parameter ranges: the gate length Lg(1-320 microns), the gate-source distance Lgs(0.5-5 microns), and the layer thickness d1(35-58 nm) of AlGaAs beneath the gate. Based on the obtained results, a high-performance enhancement-mode p-HFET was fabricated with the following parameters: Lg = 1 microns, Lgs = 0.5 microns, and d1 = 35 nm . The achieved extrinsic transconductance gm was 75 mS/mm at 77 K. This experimental result indicates that a gm greater than 200 mS/mm at 77 K can be obtained in 1-micron gate p-HFET devices.

  16. Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

    SciTech Connect

    Khmissi, H.; Baira, M.; Bouzaieene, L.; Saidi, F.; Maaref, H.; Sfaxi, L.; Bru-Chevallier, C.

    2011-03-01

    Optical properties of InAs quantum dots (QDs) inserted in AlGaAs/GaAs modulation doped heterostructure are investigated. To study the effect of carrier transfer behavior on the luminescence of self-assembled quantum dots, a series of sample has been prepared using molecular beam epitaxy (Riber 32 system) in which we have varied the thickness separating the delta dopage and the InAs quantum dots layer. Photoluminescence spectra show the existence of two peaks that can be attributed to transition energies from the ground state (E{sub 1}-HH{sub 1}) and the first excited state (E{sub 2}-HH{sub 2}). Two antagonist effects have been observed, a blue shift of the emission energies result from electron transferred from the AlGaAs/GaAs heterojunction to the InAs quantum dots and a red shift caused by the quantum confined Stark effect due to the internal electric field existing In the AlGaAs/GaAs heterojunction.

  17. Electron Spin Resonance on Mobile and Confined States in Gated Modulation Doped Si/SiGe Heterostructures

    NASA Astrophysics Data System (ADS)

    He, Jianhua; Malissa, H.; Lu, Tzu-Ming; Shankar, S.; Tyryshkin, A. M.; Lyon, S. A.; Chen, Hung-Ming; Kuan, Chieh-Hsiung

    2010-03-01

    Electron spins in quantum dots in Si/SiGe heterostructures are promising qubits but controlling and measuring spins in gated dots is challenging. Fortunately, electrons confined into natural quantum dots by interface disorder can capture the spin physics with minimal processing, exhibiting long T1 and T2 at the Si/SiO2 interface^1. Natural quantum dots in the Si/SiGe system may be similarly useful. As a first step, we have fabricated a 2.2 x 13mm^2 Hall bar on a Si/SiGe substrate gated with an Al gate above an Al2O3 insulator, and performed electron spin resonance (ESR) at gate voltages above and below threshold. The ESR signal arising from the Si quantum well evolves with gate voltage, and its intensity (spin susceptibility) is measured as a function of temperature down to 0.4K. The susceptibility follows a Pauli dependence when the gate is biased above threshold, while it is Curie-like below threshold, indicating an evolution from a mobile 2D system towards localized states confined in natural dots by the intrinsic disorder in the quantum well. This work is supported by LPS and ARO. [1] S. Shankar, et al., Physica E, 40, 1659-1661 (2008).

  18. Negative terahertz conductivity in remotely doped graphene bilayer heterostructures

    SciTech Connect

    Ryzhii, V.; Ryzhii, M.; Mitin, V.; Shur, M. S.; Otsuji, T.

    2015-11-14

    Injection or optical generation of electrons and holes in graphene bilayers (GBLs) can result in the interband population inversion enabling the terahertz (THz) radiation lasing. The intraband radiative processes compete with the interband transitions. We demonstrate that remote doping enhances the indirect interband generation of photons in the proposed GBL heterostructures. Therefore, such remote doping helps to surpass the intraband (Drude) absorption, and results in large absolute values of the negative dynamic THz conductivity in a wide range of frequencies at elevated (including room) temperatures. The remotely doped GBL heterostructure THz lasers are expected to achieve higher THz gain compared with previously proposed GBL-based THz lasers.

  19. Modulated two-dimensional charge-carrier density in LaTiO3-layer-doped LaAlO3/SrTiO3 heterostructure.

    PubMed

    Nazir, Safdar; Bernal, Camille; Yang, Kesong

    2015-03-11

    The highly mobile two-dimensional electron gas (2DEG) formed at the polar/nonpolar LaAlO3/SrTiO3 (LAO/STO) heterostructure (HS) is a matter of great interest because of its potential applications in nanoscale solid-state devices. To realize practical implementation of the 2DEG in device design, desired physical properties such as tuned charge carrier density and mobility are necessary. In this regard, polar perovskite-based transition metal oxides can act as doping layers at the interface and are expected to tune the electronic properties of 2DEG of STO-based HS systems dramatically. Herein, we investigated the doping effects of LaTiO3(LTO) layers on the electronic properties of 2DEG at n-type (LaO)(+1)/(TiO2)(0) interface in the LAO/STO HS using spin-polarized density functional theory calculations. Our results indicate an enhancement of orbital occupation near the Fermi energy, which increases with respect to the number of LTO unit cells, resulting in a higher charge carrier density of 2DEG than that of undoped system. The enhanced charge carrier density is attributed to an extra electron introduced by the Ti 3d(1) orbitals from the LTO dopant unit cells. This conclusion is consistent with the recent experimental findings (Appl. Phys. Lett. 2013, 102, 091601). Detailed charge density and partial density of states analysis suggests that the 2DEG in the LTO-doped HS systems primarily comes from partially occupied dyz and dxz orbitals.

  20. Photo doping effect in graphene/BN heterostructure

    NASA Astrophysics Data System (ADS)

    Ju, Long; Velasco, Jairo, Jr.; Hwang, Edwin; Kim, Jonghwan; Wang, Feng

    2013-03-01

    Boron nitride has been demonstrated as an ideal substrate to achieve high mobility in graphene. At the same time We observed strong change of graphene transport properties by shining light on graphene/BN heterostructure. This is attributed to photo doping effect induced by impurity excitation in BN. Optical spectroscopy based on this photo-doping effects enables us to probe impurities in crystalline BN. Such information will be important for potential applications based on graphene/BN heterostructures. The potential of applying similar technique to probe defects in other insulators and semiconductors will also be discussed.

  1. Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti, Zr)O3 heterostructure

    NASA Astrophysics Data System (ADS)

    Kajdos, Adam P.; Ouellette, Daniel G.; Cain, Tyler A.; Stemmer, Susanne

    2013-08-01

    A two-dimensional electron gas (2DEG) in SrTiO3 is created via modulation doping by interfacing undoped SrTiO3 with a wider-band-gap material, SrTi1-xZrxO3, which is doped n-type with La. All layers are grown using hybrid molecular beam epitaxy. Using magnetoresistance measurements, we show that electrons are transferred into the SrTiO3, and a 2DEG is formed. In particular, Shubnikov-de Haas oscillations are shown to depend only on the perpendicular magnetic field. Experimental Shubnikov-de Haas oscillations are compared with calculations that assume multiple occupied subbands.

  2. Voltage-impulse-induced dual-range nonvolatile magnetization modulation in metglas/PZT heterostructure

    NASA Astrophysics Data System (ADS)

    Tang, Xiaoli; Su, Hua; Zhang, Huaiwu; Sun, Nian X.

    2016-11-01

    Dual-range, nonvolatile magnetization modulation induced by voltage impulses was investigated in the metglas/lead zirconate titanate (PZT) heterostructure at room temperature. The heterostructure was obtained by bonding a square metglas ribbon on the top electrode of the PZT substrate, which contained defect dipoles resulting from acceptor doping. The PZT substrate achieved two strain hysteretic loops with the application of specific voltage impulse excitation modes. Through strain-mediated magnetoelectric coupling between the metglas ribbon and the PZT substrate, two strain hysteretic loops led to a dual-range nonvolatile magnetization modulation in the heterostructure. Reversible and stable voltage-impulse-induced nonvolatile modulation in the ferromagnetic resonance field and magnetic hysteresis characteristics were also realized. This method provides a promising approach in reducing energy consumption in magnetization modulation and other related devices.

  3. Magnetism in a Mn modulation-doped InAs/InGaAs heterostructure with a two-dimensional hole system

    NASA Astrophysics Data System (ADS)

    Rupprecht, B.; Krenner, W.; Wurstbauer, U.; Heyn, Ch.; Windisch, T.; Wilde, M. A.; Wegscheider, W.; Grundler, D.

    2010-05-01

    For an InAs quantum well which is modulation-doped with Mn we measure directly and simultaneously the magnetization and magnetic anisotropy of, both, the two dimensional hole system (2DHS) and Mn dopants. Using highly sensitive micromechanical torque magnetometry at 400 mK we observe the de Haas-van Alphen effect of the 2DHS in a magnetic field B up to 14 T. Around B =0 we find a magnetic hysteresis which we attribute to the spontaneous ordering of magnetic moments in the interacting Mn-hole system. Tilted field experiments suggest a uniaxial magnetic anisotropy with the easy axis in (001) growth direction.

  4. The influence of impurity profiles on mobility of two-dimensional electron gas in AlGaAs/InGaAs/GaAs heterostructures modulation-doped by donors and acceptors

    NASA Astrophysics Data System (ADS)

    Protasov, D. Yu.; Zhuravlev, K. S.

    2017-03-01

    The low-temperature mobility of two-dimensional electron gas (2DEG) limited scattering by ionized impurities, alloy disorder, acoustic and optical phonons, and interface roughness was calculated for novel pseudomorphic modulation-doped by donors and acceptors InGaAs/AlGaAs quantum well structures promising for high power microwave transistors. Due to the high 2DEG density in the quantum well intersubband transitions were taken into account. Scattering by the ionized donors from δ-layer located in AlGaAs barriers dominates, whereas scattering by the ionized acceptors occupying the most part of AlGaAs barriers is negligibly weak. The width of donor doping profile is a key parameter to control 2DEG mobility, thus, increasing of the profile width from 0.25 nm to 4 nm due to segregation and diffusion of donor atoms halves the mobility. We have proposed a few approaches for the weakening of Coulomb scattering and the increase in 2DEG mobility in the novel heterostructures. The predicted mobility enhancement due to δ-layer splitting into two δ-sublayers was verified experimentally.

  5. Bipolar doping of double-layer graphene vertical heterostructures with hydrogenated boron nitride.

    PubMed

    Liu, Zhun; Wang, Ru-Zhi; Liu, Li-Min; Lau, Woon-Ming; Yan, Hui

    2015-05-07

    Using first-principles calculations, we examined the bipolar doping of double-layer graphene vertical heterostructures, which are constructed by hydrogenated boron nitride (BN) sheets sandwiched into two parallel graphene monolayers. The built-in potential difference in hydrogenated BN breaks the interlayer symmetry, resulting in the p- and n-type doping of two graphene layers at 0.83 and -0.8 eV, respectively. By tuning the interlayer spacing between the graphene and hydrogenated BN, the interfacial dipole and screening charge distribution can be significantly affected, which produces large modulations in band alignments, doping levels and tunnel barriers. Furthermore, we present an analytical model to predicate the doping level as a function of the average interlayer spacing. With large interlayer spacings, the "pillow effect" (Pauli repulsion at the highly charge overlapped interface) is diminished and the calculated Dirac point shifts are in good accordance with our prediction models. Our investigations suggest that this double-layer graphene heterostructures constructed using two-dimensional Janus anisotropic materials offer exciting opportunities for developing novel nanoscale optoelectronic and electronic devices.

  6. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

    NASA Astrophysics Data System (ADS)

    Arezki, Hakim; Boutchich, Mohamed; Alamarguy, David; Madouri, Ali; Alvarez, José; Cabarrocas, Pere Roca i.; Kleider, Jean-Paul; Yao, Fei; Lee, Young Hee

    2016-10-01

    Large-area graphene film is of great interest for a wide spectrum of electronic applications, such as field effect devices, displays, and solar cells, among many others. Here, we fabricated heterostructures composed of graphene (Gr) grown by chemical vapor deposition (CVD) on copper substrate and transferred to SiO2/Si substrates, capped by n- or p-type doped amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition. Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline. The sheet resistance varies from 360 Ω sq-1 to 1260 Ω sq-1 for the (p)-a-Si:H/Gr (n)-a-Si:H/Gr, respectively. We observed a temperature independent hole mobility of up to 1400 cm2 V-1 s-1 indicating that charge impurity is the principal mechanism limiting the transport in this heterostructure. We have demonstrated that embedding CVD graphene under a-Si:H is a viable route for large scale graphene based solar cells or display applications.

  7. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures.

    PubMed

    Arezki, Hakim; Boutchich, Mohamed; Alamarguy, David; Madouri, Ali; Alvarez, José; Cabarrocas, Pere Roca I; Kleider, Jean-Paul; Yao, Fei; Hee Lee, Young

    2016-10-12

    Large-area graphene film is of great interest for a wide spectrum of electronic applications, such as field effect devices, displays, and solar cells, among many others. Here, we fabricated heterostructures composed of graphene (Gr) grown by chemical vapor deposition (CVD) on copper substrate and transferred to SiO2/Si substrates, capped by n‑ or p-type doped amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition. Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline. The sheet resistance varies from 360 Ω sq(-1) to 1260 Ω sq(-1) for the (p)-a-Si:H/Gr (n)-a-Si:H/Gr, respectively. We observed a temperature independent hole mobility of up to 1400 cm(2) V(-1) s(-1) indicating that charge impurity is the principal mechanism limiting the transport in this heterostructure. We have demonstrated that embedding CVD graphene under a-Si:H is a viable route for large scale graphene based solar cells or display applications.

  8. Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures.

    PubMed

    Ajay, A; Lim, C B; Browne, D A; Polaczyński, J; Bellet-Amalric, E; Bleuse, J; den Hertog, M I; Monroy, E

    2017-10-06

    In this paper, we study band-to-band and intersubband (ISB) characteristics of Si- and Ge-doped GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 μm. Regarding the band-to-band properties, we discuss the variation of the screening of the internal electric field by free carriers, as a function of the doping density and well/nanodisk size. We observe that nanowire heterostructures consistently present longer photoluminescence decay times than their planar counterparts, which supports the existence of an in-plane piezoelectric field associated to the shear component of the strain tensor in the nanowire geometry. Regarding the ISB characteristics, we report absorption covering 1.45-1.75 μm using Ge-doped quantum wells, with comparable performance to Si-doped planar heterostructures. We also report similar ISB absorption in Si- and Ge-doped nanowire heterostructures indicating that the choice of dopant is not an intrinsic barrier for observing ISB phenomena. The spectral shift of the ISB absorption as a function of the doping concentration due to many body effects confirms that Si and Ge efficiently dope GaN/AlN nanowire heterostructures.

  9. Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures

    NASA Astrophysics Data System (ADS)

    Ajay, A.; Lim, C. B.; Browne, D. A.; Polaczyński, J.; Bellet-Amalric, E.; Bleuse, J.; den Hertog, M. I.; Monroy, E.

    2017-10-01

    In this paper, we study band-to-band and intersubband (ISB) characteristics of Si- and Ge-doped GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 μm. Regarding the band-to-band properties, we discuss the variation of the screening of the internal electric field by free carriers, as a function of the doping density and well/nanodisk size. We observe that nanowire heterostructures consistently present longer photoluminescence decay times than their planar counterparts, which supports the existence of an in-plane piezoelectric field associated to the shear component of the strain tensor in the nanowire geometry. Regarding the ISB characteristics, we report absorption covering 1.45–1.75 μm using Ge-doped quantum wells, with comparable performance to Si-doped planar heterostructures. We also report similar ISB absorption in Si- and Ge-doped nanowire heterostructures indicating that the choice of dopant is not an intrinsic barrier for observing ISB phenomena. The spectral shift of the ISB absorption as a function of the doping concentration due to many body effects confirms that Si and Ge efficiently dope GaN/AlN nanowire heterostructures.

  10. Nanomechanical electro-optical modulator based on atomic heterostructures

    PubMed Central

    Thomas, P. A.; Marshall, O. P.; Rodriguez, F. J.; Auton, G. H.; Kravets, V. G.; Kundys, D.; Su, Y.; Grigorenko, A. N.

    2016-01-01

    Two-dimensional atomic heterostructures combined with metallic nanostructures allow one to realize strong light–matter interactions. Metallic nanostructures possess plasmonic resonances that can be modulated by graphene gating. In particular, spectrally narrow plasmon resonances potentially allow for very high graphene-enabled modulation depth. However, the modulation depths achieved with this approach have so far been low and the modulation wavelength range limited. Here we demonstrate a device in which a graphene/hexagonal boron nitride heterostructure is suspended over a gold nanostripe array. A gate voltage across these devices alters the location of the two-dimensional crystals, creating strong optical modulation of its reflection spectra at multiple wavelengths: in ultraviolet Fabry–Perot resonances, in visible and near-infrared diffraction-coupled plasmonic resonances and in the mid-infrared range of hexagonal boron nitride's upper Reststrahlen band. Devices can be extremely subwavelength in thickness and exhibit compact and truly broadband modulation of optical signals using heterostructures of two-dimensional materials. PMID:27874003

  11. Thickness-dependent voltage-modulated magnetism in multiferroic heterostructures

    NASA Astrophysics Data System (ADS)

    Shu, Li; Li, Zheng; Ma, Jing; Gao, Ya; Gu, Lin; Shen, Yang; Lin, Yuanhua; Nan, C. W.

    2012-01-01

    The voltage-modulated magnetic behavior in multiferroic Ni/BaTiO3 heterostructures grown on SrTiO3 single crystal substrate was observed by the magneto-optical Kerr effect measurement in an AC modulation technique with synchronizing the frequency of the Kerr signal detector to the low-frequency AC actuation voltage. The results showed coexistence at room-temperature of two magnetoelectric (ME) mechanisms, i.e., strain- and interface charge-mediated couplings. The interaction between the different ME couplings leads to a remarkable thickness-dependent voltage modulation of the magnetic behavior.

  12. Photoelectrochemical Performance Observed in Mn-Doped BiFeO3 Heterostructured Thin Films

    PubMed Central

    Xu, Hao-Min; Wang, Huanchun; Shi, Ji; Lin, Yuanhua; Nan, Cewen

    2016-01-01

    Pure BiFeO3 and heterostructured BiFeO3/BiFe0.95Mn0.05O3 (5% Mn-doped BiFeO3) thin films have been prepared by a chemical deposition method. The band structures and photosensitive properties of these films have been investigated elaborately. Pure BiFeO3 films showed stable and strong response to photo illumination (open circuit potential kept −0.18 V, short circuit photocurrent density was −0.023 mA·cm−2). By Mn doping, the energy band positions shifted, resulting in a smaller band gap of BiFe0.95Mn0.05O3 layer and an internal field being built in the BiFeO3/BiFe0.95Mn0.05O3 interface. BiFeO3/BiFe0.95Mn0.05O3 and BiFe0.95Mn0.05O3 thin films demonstrated poor photo activity compared with pure BiFeO3 films, which can be explained by the fact that Mn doping brought in a large amount of defects in the BiFe0.95Mn0.05O3 layers, causing higher carrier combination and correspondingly suppressing the photo response, and this negative influence was more considerable than the positive effects provided by the band modulation. PMID:28335343

  13. Photoelectrochemical Performance Observed in Mn-Doped BiFeO₃ Heterostructured Thin Films.

    PubMed

    Xu, Hao-Min; Wang, Huanchun; Shi, Ji; Lin, Yuanhua; Nan, Cewen

    2016-11-16

    Pure BiFeO₃ and heterostructured BiFeO₃/BiFe0.95Mn0.05O₃ (5% Mn-doped BiFeO₃) thin films have been prepared by a chemical deposition method. The band structures and photosensitive properties of these films have been investigated elaborately. Pure BiFeO₃ films showed stable and strong response to photo illumination (open circuit potential kept -0.18 V, short circuit photocurrent density was -0.023 mA·cm(-2)). By Mn doping, the energy band positions shifted, resulting in a smaller band gap of BiFe0.95Mn0.05O₃ layer and an internal field being built in the BiFeO₃/BiFe0.95Mn0.05O₃ interface. BiFeO₃/BiFe0.95Mn0.05O₃ and BiFe0.95Mn0.05O₃ thin films demonstrated poor photo activity compared with pure BiFeO₃ films, which can be explained by the fact that Mn doping brought in a large amount of defects in the BiFe0.95Mn0.05O₃ layers, causing higher carrier combination and correspondingly suppressing the photo response, and this negative influence was more considerable than the positive effects provided by the band modulation.

  14. Graphene/CdTe heterostructure solar cell and its enhancement with photo-induced doping

    SciTech Connect

    Lin, Shisheng Chen, Hongsheng; Li, Xiaoqiang; Zhang, Shengjiao; Wang, Peng; Xu, Zhijuan; Zhong, Huikai; Wu, Zhiqian

    2015-11-09

    We report a type of solar cell based on graphene/CdTe Schottky heterostructure, which can be improved by surface engineering as graphene is atomic thin. By coating a layer of ultrathin CdSe quantum dots onto graphene/CdTe heterostructure, the power conversion efficiency is increased from 2.08% to 3.10%. Photo-induced doping is mainly accounted for this enhancement, as evidenced by field effect transport, Raman, photoluminescence, and quantum efficiency measurements. This work demonstrates a feasible way of improving the performance of graphene/semiconductor heterostructure solar cells by combining one dimensional with two dimensional materials.

  15. Effect of silicon doping in InGaN/GaN heterostructure grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Surender, S.; Pradeep, S.; Prabakaran, K.; Singh, Shubra; Baskar, K.

    2017-05-01

    In this work the effect of Si doped InGaN/GaN heterostructure is systematically studied. The n-InGaN /GaN heterostructure are grown on c-plane sapphire substrate by horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD). The heterostructure samples are investigated by structural, optical, morphological and electrical studies using High Resolution X-ray diffraction (HRXRD), room temperature Photoluminescence (PL), Atomic Force Microscopy (AFM) and Hall measurement respectively. The composition of indium in n-InGaN/GaN heterostructure was calculated as 15.9% using epitaxy smooth fit software. The energy band gap (Eg) of the InGaN epilayer has been calculated as 2.78 eV using vigard's law. PL emission obtained at 446 nm for n-InGaN epilayer. AFM results indicate that the Si doped InGaN/GaN heterostructure has the root mean square (rms) roughness of about 0.59 nm for a scan area of 5×5 µm2 which has island like growth. Moreover, Hall measurements results shows that Si doped InGaN/GaN heterostructure possess carrier concentration of 4.2 × 1018cm-3 and mobility of 257 cm2/V s at room temperature.

  16. Electrical property studies on chemically processed polypyrolle/aluminum doped ZnO based hybrid heterostructures

    NASA Astrophysics Data System (ADS)

    Mohan Kumar, G.; Ilanchezhiyan, P.; Madhan Kumar, A.; Yuldashev, Sh. U.; Kang, T. W.

    2016-04-01

    A hybrid structure based on p-type polypyrolle (PPy) and n-type aluminum (Al) doped ZnO nanorods was successfully constructed. The effect of Al doping on material properties of wurtzite structured ZnO were studied using several analytical techniques. To establish the desired hybrid structure, pyrrole monomers were polymerized on hydrothermally grown Al doped ZnO nanorods by chemical polymerization. The current⿿voltage characteristics on the fabricated PPy/Al doped ZnO heterostructures were found to exhibit excellent rectifying characteristics under dark and illumination conditions. The obtained results augment the prescribed architecture to be highly suitable for high-sensitivity optoelectronic applications.

  17. Ga self-diffusion in isotopically enriched GaAs heterostructures doped with Si and Zn

    SciTech Connect

    Norseng, Marshall Stephen

    1999-12-01

    This study attempts to advance the modeling of AlGaAs/GaAs/AlAs diffusion by experimental investigation of Ga self-diffusion in undoped, as-grown doped and Zinc diffused structures. We utilize novel, isotopically enriched superlattice and heterostructure samples to provide direct observation and accurate measurement of diffusion with a precision not possible using conventional techniques.

  18. Spontaneous doping on high quality talc-graphene-hBN van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Mania, E.; Alencar, A. B.; Cadore, A. R.; Carvalho, B. R.; Watanabe, K.; Taniguchi, T.; Neves, B. R. A.; Chacham, H.; Campos, L. C.

    2017-09-01

    Steady doping, added to its remarkable electronic properties, would make graphene a valuable commodity in the solar cell market, as energy power conversion could be substantially increased. Here we report a graphene van der Waals heterostructure which is able to spontaneously dope graphene (p-type) up to n ~ 2.2  ×  1013 cm-2 while providing excellent charge mobility (μ ~ 25 000 cm2 V-1 s-1). Such properties are achieved via deposition of graphene on atomically flat layered talc, a natural and abundant dielectric crystal. Raman investigation shows a preferential charge accumulation on graphene-talc van der Waals heterostructures, which are investigated through the electronic properties of talc/graphene/hBN heterostructure devices. These heterostructures preserve graphene’s good electronic quality, verified by the observation of quantum Hall effect at low magnetic fields (B  =  0.4 T) at T  =  4.2 K. In order to investigate the physical mechanisms behind graphene-on-talc p-type doping, we performed first-principles calculations of their interface structural and electronic properties. In addition to potentially improving solar cell efficiency, graphene doping via van der Waals stacking is also a promising route towards controlling the band gap opening in bilayer graphene, promoting a steady n or p type doping in graphene and, eventually, providing a new path to access superconducting states in graphene, predicted to exist only at very high doping.

  19. Conduction electrons in acceptor-doped GaAs/GaAlAs heterostructures: a review

    NASA Astrophysics Data System (ADS)

    Zawadzki, Wlodek; Raymond, Andre; Kubisa, Maciej

    2016-05-01

    We review magneto-optical and magneto-transport effects in GaAs/GaAlAs heterostructures doped in GaAlAs barriers with donors, providing two-dimensional (2D) electron gas (2DEG) in GaAs quantum wells (QWS), and additionally doped with smaller amounts of acceptors (mostly Be atoms) in the vicinity of 2DEG. One may also deal with residual acceptors (mostly C atoms). The behavior of such systems in the presence of a magnetic field differs appreciably from those doped in the vicinity of 2DEG with donors. Three subjects related to the acceptor-doped heterostructures are considered. First is the problem of bound states of conduction electrons confined to the vicinity of negatively charged acceptors by the joint effect of a QW and an external magnetic field parallel to the growth direction. A variational theory of such states is presented, demonstrating that an electron turning around a repulsive center has discrete energies above the corresponding Landau levels. Experimental evidence for the discrete electron energies comes from the work on interband photo-magneto-luminescence, intraband cyclotron resonance and quantum magneto-transport (the Quantum Hall and Shubnikov-de Haas effects). An electron rain-down effect at weak electric fields and a boil-off effect at strong electric fields are introduced. It is demonstrated, both theoretically and experimentally, that a negatively charged acceptor can localize more than one electron. The second subject describes experiment and theory of asymmetric quantized Hall and Shubnikov-de Haas plateaus in acceptor-doped GaAs/GaAlAs heterostructures. It is shown that the main features of the plateau asymmetry can be attributed to asymmetric density of Landau states in the presence of acceptors. However, at high magnetic fields, the rain-down effect is also at work. The third subject deals with the so-called disorder modes (DMs) in the cyclotron resonance of conduction electrons. The DMs originate from random distributions of negatively

  20. Reflectivity modulator based on GaSb/GaAs heterostructure

    NASA Astrophysics Data System (ADS)

    Rabbaa, S.

    2017-07-01

    A structure of gallium antimonide (GaSb) and gallium arsenide (GaAs) wafers is built to modulate light reflectivity at CO2 laser wavelength. A quantum well composed of GaSb/GaAs heterojunction with highly doped GaAs up to 3×1018 cm-3 is inserted inside a layer structure. A grating of periodic structure of GaAs and gold layer is added just below the substrate. Gsolver software is used to determine the reflectivity of incident light with the existence of free carriers. A voltage is applied to the doped layer to deplete the free electrons and the reflectivity is determined again. The significant difference in reflectivity between the two cases can be used to build a light reflectivity modulator device.

  1. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures.

    SciTech Connect

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M.; Eastman, Jeffrey A.

    2016-06-01

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment.

  2. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

    SciTech Connect

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M.; Eastman, Jeffrey A.

    2016-06-10

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behavior, large changes in metal-insulator transition temperatures, or enhanced catalytic activity. Here in this paper, we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behavior is dependent on interface properties and is attained without cation doping or changes in the gas environment.

  3. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures.

    PubMed

    Veal, Boyd W; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M; Eastman, Jeffrey A

    2016-06-10

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment.

  4. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

    PubMed Central

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M.; Eastman, Jeffrey A.

    2016-01-01

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment. PMID:27283250

  5. Acoustic Phonon Scattering in Modulation Doped Aluminum sub x Gallium sub (1-x) Arsenide/Gallium Arsenide Heterojunctions

    DTIC Science & Technology

    1988-07-01

    Low-Compensation GaAs," Phys. Rev. B 28, 1151-1153 (1983). 23 W. Walukiewicz, H. E. Ruda , J. Lagowski, and H. C. Gatos, "Response to ’Com- ment on...E. Ruda , J. Lagowski, and H. C. Gatos, "Electron Mobilities in Modulation-Doped Heterostructures," Phys. Rev. B 30, 4571-4582 (1984). 53 P. J. Price

  6. Oxygen Doping Study of Cuprate/Manganite Thin-Film Heterostructures

    NASA Astrophysics Data System (ADS)

    Zhang, Hao; Wei, J. Y. T.; Gong, Wen He; Botton, Gianluigi A.

    2011-03-01

    Recent studies of thin-film heterostructures comprising superconducting cuprates and ferromagnetic manganites have revealed a range of novel physical phenomena. These phenomena are believed to involve complex interfacial interactions between competing order parameters, and appear to be highly sensitive to carrier doping. To further examine these phenomena, we carry out a systematic oxygen-doping study of cuprate/manganite multilayer thin films, grown epitaxially by pulsed laser-ablated deposition. Our samples are characterized by electrical transport and magnetization measurements, as well as x-ray diffraction and several microscopy probes including SEM and TEM. We also make cation substitution in the cuprate layer, in order to study the effects of carrier doping across the interface. Work supported by NSERC, CFI/OIT and the Canadian Institute for Advanced Research.

  7. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

    DOE PAGES

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; ...

    2016-06-10

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behavior, large changes in metal-insulator transition temperatures, or enhanced catalytic activity. Here in this paper, we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) dopingmore » of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behavior is dependent on interface properties and is attained without cation doping or changes in the gas environment.« less

  8. An investigation of dopping profile for a one dimensional heterostructure

    NASA Astrophysics Data System (ADS)

    Huang, Zhaohui

    2005-03-01

    A one-dimensional junction is formed by joining two silicon nanowires whose surfaces are terminated with capping groups of different electronegativity and polarizability. If this heterostructure is doped (with e.g. phosphorous) on the side with the higher bandgap, the system becomes a modulation doped heterostructure with novel one-dimensional electrostatics. We use density functional theory calculations in the pseudopotential approximation, plus empirical model calculations, to investigate doping profiles in this new class of nanostructures.

  9. Composition-Modulated Two-Dimensional Semiconductor Lateral Heterostructures via Layer-Selected Atomic Substitution.

    PubMed

    Li, Honglai; Wu, Xueping; Liu, Hongjun; Zheng, Biyuan; Zhang, Qinglin; Zhu, Xiaoli; Wei, Zheng; Zhuang, Xiujuan; Zhou, Hong; Tang, Wenxin; Duan, Xiangfeng; Pan, Anlian

    2017-01-24

    Composition-controlled growth of two-dimensional layered semiconductor heterostructures is crucially important for their applications in multifunctional integrated photonics and optoelectronics devices. Here, we report the realization of composition completely modulated layered semiconductor MoS2-MoS2(1-x)Se2x (0 < x < 1) lateral heterostructures via the controlled layer-selected atomic substitution of pregrown stacking MoS2, with a bilayer located at the center of a monolayer. Through controlling the reaction time, S at the monolayer MoS2 at the peripheral area can be selectively substituted by Se atoms at different levels, while the bilayer region at the center retains the original composition. Microstructure characterizations demonstrated the formation of lateral heterostructures with a sharp interface, with the composition at the monolayer area gradually modulated from MoS2 to MoSe2 and having high-quality crystallization at both the monolayer and the bilayer areas. Photoluminescence and Raman mapping studies exhibit the tunable optical properties only at the monolayer region of the as-grown heterostructures, which further demonstrates the realization of high-quality composition/bandgap modulated lateral heterostructures. This work offers an interesting and easy route for the development of high-quality layered semiconductor heterostructures for potential broad applications in integrated nanoelectronic and optoelectronic devices.

  10. Intrinsic Spin-Orbit Coupling in Superconducting Delta-Doped SrTiO3 Heterostructures

    SciTech Connect

    Bell, Christopher

    2011-08-19

    We report the violation of the Pauli limit due to intrinsic spin-orbit coupling in SrTiO{sub 3} heterostructures. Via selective doping down to a few nanometers, a two-dimensional superconductor is formed, geometrically suppressing orbital pair-breaking. The spin-orbit scattering is exposed by the robust in-plane superconducting upper critical field, exceeding the Pauli limit by a factor of 4. Transport scattering times several orders of magnitude higher than for conventional thin film superconductors enables a new regime to be entered, where spin-orbit coupling effects arise non-perturbatively.

  11. Enhancement of photovoltaic effects and photoconductivity observed in Co-doped amorphous carbon/silicon heterostructures

    SciTech Connect

    Jiang, Y. C.; Gao, J.

    2016-08-22

    Co-doped amorphous carbon (Co-C)/silicon heterostructures were fabricated by growing Co-C films on n-type Si substrates using pulsed laser deposition. A photovoltaic effect (PVE) has been observed at room temperature. Open-circuit voltage V{sub oc} = 320 mV and short-circuit current density J{sub sc }= 5.62 mA/cm{sup 2} were measured under illumination of 532-nm light with the power of 100 mW/cm{sup 2}. In contrast, undoped amorphous carbon/Si heterostructures revealed no significant PVE. Based on the PVE and photoconductivity (PC) investigated at different temperatures, it was found that the energy conversion efficiency increased with increasing the temperature and reached the maximum at room temperature, while the photoconductivity showed a reverse temperature dependence. The observed competition between PVE and PC was correlated with the way to distribute absorbed photons. The possible mechanism, explaining the enhanced PVE and PC in the Co-C/Si heterostructures, might be attributed to light absorption enhanced by localized surface plasmons in Co nanoparticles embedded in the carbon matrix.

  12. Manipulable GMR Effect in a δ-Doped Magnetically Confined Semiconductor Heterostructure

    NASA Astrophysics Data System (ADS)

    Jiang, Ya-Qing; Lu, Mao-Wang; Huang, Xin-Hong; Yang, Shi-Peng; Tang, Qiang

    2016-06-01

    A giant magnetoresistance (GMR) device formed by depositing two parallel nanosized ferromagnetic strips on top of a semiconductor heterostructure has been proposed theoretically (Zhai et al. in Phys Rev B 66:125305, 2002). For the sake of manipulating its performance, we introduce a tunable δ-potential into this device with the help of atomic-layer doping techniques such as molecular beam epitaxy (MBE) or metal-organic chemical-vapor deposition. We investigate theoretically the impact of such δ-doping on the magnetoresistance ratio (MR) of the GMR device. We find that, although the δ-doping is embedded in the device, a considerable GMR effect still exists due to the significant difference in electronic transmission between parallel (P) and antiparallel (AP) configurations. Moreover, the calculated results show that the MR of the GMR device varies sensitively with the weight and/or position of the δ-doping. Thus, the GMR device can be controlled by changing the δ-doping to obtain an adjustable GMR device for magnetoelectronics applications.

  13. Nanoscale Control of Rewriteable Doping Patterns in Pristine Graphene/Boron Nitride Heterostructures.

    PubMed

    Velasco, Jairo; Ju, Long; Wong, Dillon; Kahn, Salman; Lee, Juwon; Tsai, Hsin-Zon; Germany, Chad; Wickenburg, Sebastian; Lu, Jiong; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael F

    2016-03-09

    Nanoscale control of charge doping in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and technologically promising nanoelectronics. Electrostatic gating and chemical doping are the two most common methods to achieve local control of such doping. However, these approaches suffer from complicated fabrication processes that introduce contamination, change material properties irreversibly, and lack flexible pattern control. Here we demonstrate a clean, simple, and reversible technique that permits writing, reading, and erasing of doping patterns for 2D materials at the nanometer scale. We accomplish this by employing a graphene/boron nitride heterostructure that is equipped with a bottom gate electrode. By using electron transport and scanning tunneling microscopy (STM), we demonstrate that spatial control of charge doping can be realized with the application of either light or STM tip voltage excitations in conjunction with a gate electric field. Our straightforward and novel technique provides a new path toward on-demand graphene p-n junctions and ultrathin memory devices.

  14. Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

    NASA Astrophysics Data System (ADS)

    Krishnamoorthy, Sriram; Xia, Zhanbo; Joishi, Chandan; Zhang, Yuewei; McGlone, Joe; Johnson, Jared; Brenner, Mark; Arehart, Aaron R.; Hwang, Jinwoo; Lodha, Saurabh; Rajan, Siddharth

    2017-07-01

    Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the β-(Al0.2Ga0.8)2O3/Ga2O3 material system could enable heterojunction devices for high performance electronics.

  15. Giant magnetoresistance in a two-dimensional electron gas modulated by magnetic barriers and the δ-doping

    NASA Astrophysics Data System (ADS)

    Zhang, Lan-Lan; Lu, Mao-Wang; Yang, Shi-Peng; Tang, Qiang

    2016-10-01

    We theoretically investigate the modulation of the δ-doping to a semiconductor-based giant magnetoresistance (GMR) device, which can be realized experimentally by depositing two parallel ferromagnetic (FM) stripes on top and bottom of a GaAs /AlxGa1-xAs heterostructure. It is shown that a considerable GMR effect still exists in this device with the δ-doping. It is also shown that the magnetoresistance ratio (MR) depends on not only the weight but also the position of the δ-doping. These interesting results will be useful in understanding and designing structurally-controllable GMR devices for magnetic information storage.

  16. Visualization of Photo-induced Doping patterns in Graphene/Boron Nitride Heterostructures via Scanning Tunneling Microscopy

    NASA Astrophysics Data System (ADS)

    Velasco, Jairo, Jr.; Ju, Long; Wong, Dillon; Lee, Juwon; Kahn, Salman; Tsai, Hsin-Zon; Germany, Chad; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Mike

    2015-03-01

    Photo-induced doping in graphene-boron nitride (G/BN) heterostructures enables flexible and repeatable writing and erasing of charge doping in graphene using optical irradiation. So far, however, this phenomenon has been explored using spatially averaging probes such as electron transport, and there have been no local studies into the underlying microscopic behavior. Here we report a combined scanning tunneling microscopy (STM) and optoelectronic measurement scheme that has been utilized to investigate the microscopic mechanisms at work in this process. We will discuss the latest experimental progress towards the visualization of light-induced charge doping patterns on G/BN heterostructures via STM. J.V.J. acknowledges support from the UC President's Postdoctoral Fellowship.

  17. Highly Luminescent Heterostructured Copper-Doped Zinc Sulfide Nanocrystals for Application in Cancer Cell Labeling.

    PubMed

    Ang, Huixiang; Bosman, Michel; Thamankar, Ramesh; Zulkifli, Muhammad Faizal B; Yen, Swee Kuan; Hariharan, Anushya; Sudhaharan, Thankiah; Selvan, Subramanian Tamil

    2016-08-18

    The structural characteristics of the seed-mediated synthesis of heterostructured CuS-ZnS nanocrystals (NCs) and Cu-doped ZnS (ZnS:Cu) NCs synthesized by two different protocols are compared and analyzed. At high Cu dopant concentrations, segregated subclusters of ZnS and CuS are observed. The photoluminescence quantum yield of ZnS:Cu NCs is about 50-80 %; a value much higher than that of ZnS NCs (6 %). Finally, these NCs are coated with a thin silica shell by using (3-mercaptopropyl)triethoxysilane in a reverse microemulsion to make them water soluble. Cytotoxicity experiments show that these silica-coated NCs have greatly reduced toxicity on both cancerous HeLa and noncancerous Chinese hamster ovary cells. The labeling of cancerous HeLa cells is also demonstrated.

  18. Gbps terahertz external modulator based on a composite metamaterial with a double-channel heterostructure.

    PubMed

    Zhang, Yaxin; Qiao, Shen; Liang, Shixiong; Wu, Zhenhua; Yang, Ziqiang; Feng, Zhihong; Sun, Han; Zhou, Yucong; Sun, Linlin; Chen, Zhi; Zou, Xianbing; Zhang, Bo; Hu, Jianhao; Li, Shaoqian; Chen, Qin; Li, Ling; Xu, Gaiqi; Zhao, Yuncheng; Liu, Shenggang

    2015-05-13

    The past few decades have witnessed a substantial increase in terahertz (THz) research. Utilizing THz waves to transmit communication and imaging data has created a high demand for phase and amplitude modulation. However, current active THz devices, including modulators and switches, still cannot meet THz system demands. Double-channel heterostructures, an alternative semiconductor system, can support nanoscale two-dimensional electron gases (2DEGs) with high carrier concentration and mobility and provide a new way to develop active THz devices. In this Letter, we present a composite metamaterial structure that combines an equivalent collective dipolar array with a double-channel heterostructure to obtain an effective, ultrafast, and all-electronic grid-controlled THz modulator. Electrical control allows for resonant mode conversion between two different dipolar resonances in the active device, which significantly improves the modulation speed and depth. This THz modulator is the first to achieve a 1 GHz modulation speed and 85% modulation depth during real-time dynamic tests. Moreover, a 1.19 rad phase shift was realized. A wireless free-space-modulation THz communication system based on this external THz modulator was tested using 0.2 Gbps eye patterns. Therefore, this active composite metamaterial modulator provides a basis for the development of effective and ultrafast dynamic devices for THz wireless communication and imaging systems.

  19. Ferroelectric strain modulation of antiferromagnetic moments in Ni/NiO ferromagnet/antiferromagnet heterostructures

    NASA Astrophysics Data System (ADS)

    Zhang, Yu-Jun; Chen, Jia-Hui; Li, Liang-Liang; Ma, Jing; Nan, Ce-Wen; Lin, Yuan-Hua

    2017-05-01

    Electric field manipulation of magnetic properties has attracted a lot of research interest recently in solid-state physics. However, ferroelectric strain modulation of antiferromagnetic (AFM) layer is rarely studied in ferromagnet/antiferromagnet/ferroelectric heterostructures. In this paper, we prepared a Ni/NiO(001) heterostructure on ferroelectric Pb (Mg1/3N b2 /3 ) 0.7T i0.3O3(001 ) substrates and observed an out-of-plane electric field modulation of exchange bias and magnetic anisotropy in the Ni layer. The exchange bias was easily eliminated by an electric field cycle, which was due to the AFM domain switching induced by piezoelectric strain in the NiO layer. Synchrotron x ray linear dichroism results confirmed the AFM moment alignment induced by ferroelectric strain as well. Our work showed a promising strategy to manipulate AFM moments and domains, serving the blooming AFM spintronics.

  20. Efficient Nitrogen Doping of Single-Layer Graphene Accompanied by Negligible Defect Generation for Integration into Hybrid Semiconductor Heterostructures.

    PubMed

    Sarau, George; Heilmann, Martin; Bashouti, Muhammad; Latzel, Michael; Tessarek, Christian; Christiansen, Silke

    2017-03-22

    While doping enables application-specific tailoring of graphene properties, it can also produce high defect densities that degrade the beneficial features. In this work, we report efficient nitrogen doping of ∼11 atom % without virtually inducing new structural defects in the initial, large-area, low defect, and transferred single-layer graphene. To shed light on this remarkable high-doping-low-disorder relationship, a unique experimental strategy consisting of analyzing the changes in doping, strain, and defect density after each important step during the doping procedure was employed. Complementary micro-Raman mapping, X-ray photoelectron spectroscopy, and optical microscopy revealed that effective cleaning of the graphene surface assists efficient nitrogen incorporation accompanied by mild compressive strain resulting in negligible defect formation in the doped graphene lattice. These original results are achieved by separating the growth of graphene from its doping. Moreover, the high doping level occurred simultaneously with the epitaxial growth of n-GaN micro- and nanorods on top of graphene, leading to the flow of higher currents through the graphene/n-GaN rod interface. Our approach can be extended toward integrating graphene into other technologically relevant hybrid semiconductor heterostructures and obtaining an ohmic contact at their interfaces by adjusting the doping level in graphene.

  1. Modulation of electronic structures of MoSe2/WSe2 van der Waals heterostructure by external electric field

    NASA Astrophysics Data System (ADS)

    Zhang, Fang; Li, Wei; Dai, Xianqi

    2017-10-01

    By using first-principles calculations, we investigate the electronic structures of MoSe2/WSe2 van der Waals(vdW) heterostructure by applying external electric field(Eext) perpendicular to the layers. It is demonstrated that MoSe2/WSe2 heterostructure is a type-II vdW heterostructure. The band gap of MoSe2/WSe2 is significantly modulated by Eext, eventually a semiconductor-to-metal transition can be realized. The positive and negative Eext have different effects on the band gap due to the intrinsic spontaneous electric polarization in MoSe2/WSe2 heterostructure. Moreover, MoSe2/WSe2 heterobilayer experiences transitions from type-II to type-I and then to type-II under various Eext. The present study provides great application potential of ultrathin MoSe2/WSe2 heterostructure in future nano- and optoelectronics.

  2. Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

    NASA Astrophysics Data System (ADS)

    König, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

    2017-04-01

    All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements.

  3. Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

    PubMed Central

    König, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

    2017-01-01

    All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements. PMID:28425460

  4. Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide.

    PubMed

    König, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

    2017-04-20

    All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements.

  5. Effect of doping on the characteristics of infrared photodetectors based on van der Waals heterostructures with multiple graphene layers

    NASA Astrophysics Data System (ADS)

    Ryzhii, V.; Ryzhii, M.; Leiman, V.; Mitin, V.; Shur, M. S.; Otsuji, T.

    2017-08-01

    We study the operation of infrared photodetectors based on van der Waals heterostructures with multiple graphene layers (GLs) and n-type emitter and collector contacts. The operation of such GL infrared photodetectors (GLIPs) is associated with the photoassisted escape of electrons from the GLs into the continuum states in the conduction band of the barrier layers due to the interband photon absorption, the propagation of these electrons, and the electrons injected from the emitter across the heterostructure and their collection by the collector contact. The space charge of the holes trapped in the GLs provides a relatively strong injection and large photoelectric gain. We calculate the GLIP responsivity and dark current detectivity as functions of the energy of incident infrared photons and the structural parameters. It is shown that both the periodic selective doping of the inter-GL barrier layers and the GL doping lead to a pronounced variation of the GLIP spectral characteristics, particularly near the interband absorption threshold, while the doping of GLs solely results in a substantial increase in the GLIP detectivity. The doping "engineering" opens wide opportunities for the optimization of GLIPs for operation in different parts of the radiation spectrum from near infrared to terahertz.

  6. Film size-dependent voltage-modulated magnetism in multiferroic heterostructures

    PubMed Central

    Hu, J.-M.; Shu, L.; Li, Z.; Gao, Y.; Shen, Y.; Lin, Y. H.; Chen, L. Q.; Nan, C. W.

    2014-01-01

    The electric-voltage-modulated magnetism in multiferroic heterostructures, also known as the converse magnetoelectric (ME) coupling, has drawn increasing research interest recently owing to its great potential applications in future low-power, high-speed electronic and/or spintronic devices, such as magnetic memory and computer logic. In this article, based on combined theoretical analysis and experimental demonstration, we investigate the film size dependence of such converse ME coupling in multiferroic magnetic/ferroelectric heterostructures, as well as exploring the interaction between two relating coupling mechanisms that are the interfacial strain and possibly the charge effects. We also briefly discuss some issues for the next step and describe new device prototypes that can be enabled by this technology. PMID:24421375

  7. Electric-field-modulated nonvolatile resistance switching in VO₂/PMN-PT(111) heterostructures.

    PubMed

    Zhi, Bowen; Gao, Guanyin; Xu, Haoran; Chen, Feng; Tan, Xuelian; Chen, Pingfan; Wang, Lingfei; Wu, Wenbin

    2014-04-09

    The electric-field-modulated resistance switching in VO2 thin films grown on piezoelectric (111)-0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 (PMN-PT) substrates has been investigated. Large relative change in resistance (10.7%) was observed in VO2/PMN-PT(111) hererostructures at room temperature. For a substrate with a given polarization direction, stable resistive states of VO2 films can be realized even when the applied electric fields are removed from the heterostructures. By sweeping electric fields across the heterostructure appropriately, multiple resistive states can be achieved. These stable resistive states result from the different stable remnant strain states of substrate, which is related to the rearrangements of ferroelectric domain structures in PMN-PT(111) substrate. The resistance switching tuned by electric field in our work may have potential applications for novel electronic devices.

  8. Characterization of iron doped indium phosphide as a current blocking layer in buried heterostructure quantum cascade lasers

    NASA Astrophysics Data System (ADS)

    Nida, S.; Hinkov, B.; Gini, E.; Faist, J.

    2017-03-01

    This work analyzes transport through metal organic chemical vapour deposition grown Iron doped Indium Phosphide (InP:Fe) for use as a current blocking layer in buried heterostructure Quantum Cascade Lasers. The nature of Iron incorporation in InP and electrical transport properties of InP:Fe is investigated via simulation and compared with measurement. Through simulations, we are able to predict the threshold for the onset of current rise in test structures due to avalanche injection of carriers. In addition, the benefit of InAlAs barriers inserted in InP:Fe layers is investigated and found to reduce the leakage current at lower biases while delaying the onset of avalanche. In buried heterostructure configuration, we have determined that non ideal regrowth profiles make the structure more susceptible to high field effects such as avalanche injection and trap filling that induce leakage currents.

  9. An analysis of doping modulated superlattice structures

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.

    1985-01-01

    A new method of growing doping modulated superlattice structures is discussed. This method uses organo-metallic chemical vapor deposition (MO-CVD) with the added feature of controlled plasma in the growth regions. The main objective was to study how the growth environment affected the electronic and optical properties of the superlattice structures. Because a serious safety hazard was discovered in the growth process, no superlattice structures were fabricated and the research on this material had to be terminated. The hazard had to do with the lack of adequate means for the disposal of toxic elemental beryllium.

  10. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K.; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J.; Kalinin, Sergei V.; Lai, Keji; Demkov, Alexander A.

    2015-01-14

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  11. Impulse voltage control of continuously tunable bipolar resistive switching in Pt/Bi0.9Eu0.1FeO3/Nb-doped SrTiO3 heterostructures

    NASA Astrophysics Data System (ADS)

    Wei, Maocai; Liu, Meifeng; Wang, Xiuzhang; Li, Meiya; Zhu, Yongdan; Zhao, Meng; Zhang, Feng; Xie, Shuai; Hu, Zhongqiang; Liu, Jun-Ming

    2017-03-01

    Epitaxial Bi0.9Eu0.1FeO3 (BEFO) thin films are deposited on Nb-doped SrTiO3 (NSTO) substrates by pulsed laser deposition to fabricate the Pt/BEFO/NSTO (001) heterostructures. These heterostructures possess bipolar resistive switching, where the resistances versus writing voltage exhibits a distinct hysteresis loop and a memristive behavior with good retention and anti-fatigue characteristics. The local resistive switching is confirmed by the conductive atomic force microscopy (C-AFM), suggesting the possibility to scale down the memory cell size. The observed memristive behavior could be attributed to the ferroelectric polarization effect, which modulates the height of potential barrier and width of depletion region at the BEFO/NSTO interface. The continuously tunable resistive switching behavior could be useful to achieve non-volatile, high-density, multilevel random access memory with low energy consumption.

  12. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    DOE PAGES

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; ...

    2015-01-14

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-lossmore » spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.« less

  13. LASERS: High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AlGaAs heterostructures

    NASA Astrophysics Data System (ADS)

    Davydova, Evgeniya I.; Ladugin, M. A.; Marmalyuk, Aleksandr A.; Padalitsa, A. A.; Petrovskii, A. V.; Sukharev, A. V.; Uspenskii, Mikhail B.; Shishkin, Viktor A.

    2009-01-01

    Emission parameters of single-mode laser diodes based on InGaAs/GaAs/AlGaAs heterostructures doped with carbon and grown by using the metallorganic vapour phase epitaxy (MOVPE) technique are studied. The obtained results show that maintaining a certain doping profile ensuring optimisation of series resistance and internal optical losses during all fabrication stages of the active element of a diode laser, provides for enhancement of the laser efficiency. Based on laser heterostructures studied in this paper, highly efficient single-transverse-mode laser diodes emitting 300 mW at 980 nm have been manufactured.

  14. Electro-optical modulator in a polymerinfiltrated silicon slotted photonic crystal waveguide heterostructure resonator.

    PubMed

    Wülbern, Jan Hendrik; Petrov, Alexander; Eich, Manfred

    2009-01-05

    We present a novel concept of a compact, ultra fast electro-optic modulator, based on photonic crystal resonator structures that can be realized in two dimensional photonic crystal slabs of silicon as core material employing a nonlinear optical polymer as infiltration and cladding material. The novel concept is to combine a photonic crystal heterostructure cavity with a slotted defect waveguide. The photonic crystal lattice can be used as a distributed electrode for the application of a modulation signal. An electrical contact is hence provided while the optical wave is kept isolated from the lossy metal electrodes. Thereby, well known disadvantages of segmented electrode designs such as excessive scattering are avoided. The optical field enhancement in the slotted region increases the nonlinear interaction with an external electric field resulting in an envisaged switching voltage of approximately 1 V at modulation speeds up to 100 GHz.

  15. 2D halide perovskite-based van der Waals heterostructures: contact evaluation and performance modulation

    NASA Astrophysics Data System (ADS)

    Guo, Yaguang; Saidi, Wissam A.; Wang, Qian

    2017-09-01

    Halide perovskites and van der Waals (vdW) heterostructures are both of current interest owing to their novel properties and potential applications in nano-devices. Here, we show the great potential of 2D halide perovskite sheets (C4H9NH3)2PbX4 (X  =  Cl, Br and I) that were synthesized recently (Dou et al 2015 Science 349 1518-21) as the channel materials contacting with graphene and other 2D metallic sheets to form van der Waals heterostructures for field effect transistor (FET). Based on state-of-the-art theoretical simulations, we show that the intrinsic properties of the 2D halide perovskites are preserved in the heterojunction, which is different from the conventional contact with metal surfaces. The 2D halide perovskites form a p-type Schottky barrier (Φh) contact with graphene, where tunneling barrier exists, and a negative band bending occurs at the lateral interface. We demonstrate that the Schottky barrier can be turned from p-type to n-type by doping graphene with nitrogen atoms, and a low-Φh or an Ohmic contact can be realized by doping graphene with boron atoms or replacing graphene with other high-work-function 2D metallic sheets such as ZT-MoS2, ZT-MoSe2 and H-NbS2. This study not only predicts a 2D halide perovskite-based FETs, but also enhances the understanding of tuning Schottky barrier height in device applications.

  16. Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing δ-doped layers

    SciTech Connect

    Khazanova, S. V. Degtyarev, V. E.; Tikhov, S. V.; Baidus, N. V.

    2015-01-15

    InGaAs/GaAs heterostructures containing quantum wells and δ-doped layers are studied theoretically and experimentally. On the basis of the procedure of self-consistently solving the Schrödinger equation and Poisson equation, the differential capacitance and the apparent electron concentration profiles are numerically calculated for structures with different mutual arrangements of the quantum well and the δ layer. The results of the calculations are compared with the result of analyzing the experimental capacitance-voltage characteristics of the structures. The systematic features of the behavior of the apparent concentration profiles and capacitance-voltage characteristics in relation to the geometric properties of the structure, the temperature, and the doping level are established.

  17. ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity

    NASA Astrophysics Data System (ADS)

    Lu, Yanghua; Wu, Zhiqian; Xu, Wenli; Lin, Shisheng

    2016-12-01

    A ZnO quantum dot photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W-1 and detectivity of more than 1.02 × 1013 Jones (Jones = cm Hz1/2 W-1) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W-1 to 1915 A W-1 and the detectivity is improved from 5.8 × 1012 to 1.0 × 1013 Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.

  18. CO2-Induced Defect Engineering: A New Protocol by Doping Vacancies in 2D Heterostructures for Enhanced Visible-Light Photocatalysis

    NASA Astrophysics Data System (ADS)

    Ren, Yumei; Wang, Chongze; Qi, Yuhang; Chen, Zhimin; Jia, Yu; Xu, Qun

    2017-10-01

    Defect engineering has emerged as an efficient and promising strategy in the field of semiconductor materials, while assembling controllable vacancy defects and two-dimensional (2D) heterostructures into together is a great challenge. In this work, 2D heterostructures of WS2/WO3·H2O doped with oxide vacancies have been synthesized successfully with assistance of supercritical CO2. And the fascinating heterostructures have been evidenced by their significant photocatalysis performance for water splitting. Theoretical calculations demonstrate that the vacancies in the obtained 2D heterostructures can narrow the effective band gap and improve the carrier separation efficiency as well. This wok will provide a positive strategy for fabrication of advanced photocatalyst and a new perspective in understanding the synergistic effect of structural and electronic regulations.

  19. Ab initio exploration of d0 digital magnetic heterostructures: the case of MgO and CaO δ-doped with potassium

    NASA Astrophysics Data System (ADS)

    Du, Jiangtao; Dong, Shengjie; Lu, Yi-Lin; Zhao, Hui; Wang, Liying; Feng, Liefeng

    2017-06-01

    Previous studies of digital magnetic heterostructures have mainly focused on 3 d transition metal δ-doped semiconductors. In this work, sp-electron digital magnetic heterostructures without magnetic ions are proposed. Based on a theoretical density functional investigation, electronic structures and magnetic properties of MgO and CaO δ-doped with K were reported. The results show that these heterostructures are half-metallic ferromagnetic materials having semiconducting up spins and metallic down spins, with an exchange interaction much stronger than that of a random alloy with similar K concentration. Our first-principles calculations show that the carriers at the Fermi level are strongly confined within a few monolayers around the KO plane. This strong confinement is responsible for the large exchange coupling and the two-dimensional half-metallic behavior. The thickness of the host semiconducting spacer does not significantly change the global electric and magnetic features.

  20. Tuning on-off current ratio and field-effect mobility in a MoS(2)-graphene heterostructure via Schottky barrier modulation.

    PubMed

    Shih, Chih-Jen; Wang, Qing Hua; Son, Youngwoo; Jin, Zhong; Blankschtein, Daniel; Strano, Michael S

    2014-06-24

    Field-effect transistor (FET) devices composed of a MoS2-graphene heterostructure can combine the advantages of high carrier mobility in graphene with the permanent band gap of MoS2 for digital applications. Herein, we investigate the electron transfer, photoluminescence, and gate-controlled carrier transport in such a heterostructure. We show that the junction is a Schottky barrier, whose height can be artificially controlled by gating or doping graphene. When the applied gate voltage (or the doping level) is zero, the photoexcited electron-hole pairs in monolayer MoS2 can be split by the heterojunction, significantly reducing the photoluminescence. By applying negative gate voltage (or p-doping) in graphene, the interlayer impedance formed between MoS2 and graphene exhibits an 100-fold increase. For the first time, we show that the gate-controlled interlayer Schottky impedance can be utilized to modulate carrier transport in graphene, significantly depleting the hole transport, but preserving the electron transport. Accordingly, we demonstrate a new type of FET device, which enables a controllable transition from NMOS digital to bipolar characteristics. In the NMOS digital regime, we report a very high room temperature on/off current ratio (ION/IOFF ∼ 36) in comparison to graphene-based FET devices without sacrificing the field-effect electron mobilities in graphene. By engineering the source/drain contact area, we further estimate that a higher value of ION/IOFF up to 100 can be obtained in the device architecture considered. The device architecture presented here may enable semiconducting behavior in graphene for digital and analogue electronics.

  1. Polarization-dependent interfacial coupling modulation of ferroelectric photovoltaic effect in PZT-ZnO heterostructures.

    PubMed

    Pan, Dan-Feng; Bi, Gui-Feng; Chen, Guang-Yi; Zhang, Hao; Liu, Jun-Ming; Wang, Guang-Hou; Wan, Jian-Guo

    2016-03-08

    Recently, ferroelectric perovskite oxides have drawn much attention due to potential applications in the field of solar energy conversion. However, the power conversion efficiency of ferroelectric photovoltaic effect currently reported is far below the expectable value. One of the crucial problems lies in the two back-to-back Schottky barriers, which are formed at the ferroelectric-electrode interfaces and blocking most of photo-generated carriers to reach the outside circuit. Herein, we develop a new approach to enhance the ferroelectric photovoltaic effect by introducing the polarization-dependent interfacial coupling effect. Through inserting a semiconductor ZnO layer with spontaneous polarization into the ferroelectric ITO/PZT/Au film, a p-n junction with strong polarization-dependent interfacial coupling effect is formed. The power conversion efficiency of the heterostructure is improved by nearly two orders of magnitude and the polarization modulation ratio is increased about four times. It is demonstrated that the polarization-dependent interfacial coupling effect can give rise to a great change in band structure of the heterostructure, not only producing an aligned internal electric field but also tuning both depletion layer width and potential barrier height at PZT-ZnO interface. This work provides an efficient way in developing highly efficient ferroelectric-based solar cells and novel optoelectronic memory devices.

  2. Polarization-dependent interfacial coupling modulation of ferroelectric photovoltaic effect in PZT-ZnO heterostructures

    PubMed Central

    Pan, Dan-Feng; Bi, Gui-Feng; Chen, Guang-Yi; Zhang, Hao; Liu, Jun-Ming; Wang, Guang-Hou; Wan, Jian-Guo

    2016-01-01

    Recently, ferroelectric perovskite oxides have drawn much attention due to potential applications in the field of solar energy conversion. However, the power conversion efficiency of ferroelectric photovoltaic effect currently reported is far below the expectable value. One of the crucial problems lies in the two back-to-back Schottky barriers, which are formed at the ferroelectric-electrode interfaces and blocking most of photo-generated carriers to reach the outside circuit. Herein, we develop a new approach to enhance the ferroelectric photovoltaic effect by introducing the polarization-dependent interfacial coupling effect. Through inserting a semiconductor ZnO layer with spontaneous polarization into the ferroelectric ITO/PZT/Au film, a p-n junction with strong polarization-dependent interfacial coupling effect is formed. The power conversion efficiency of the heterostructure is improved by nearly two orders of magnitude and the polarization modulation ratio is increased about four times. It is demonstrated that the polarization-dependent interfacial coupling effect can give rise to a great change in band structure of the heterostructure, not only producing an aligned internal electric field but also tuning both depletion layer width and potential barrier height at PZT-ZnO interface. This work provides an efficient way in developing highly efficient ferroelectric-based solar cells and novel optoelectronic memory devices. PMID:26954833

  3. Polarization-dependent interfacial coupling modulation of ferroelectric photovoltaic effect in PZT-ZnO heterostructures

    NASA Astrophysics Data System (ADS)

    Pan, Dan-Feng; Bi, Gui-Feng; Chen, Guang-Yi; Zhang, Hao; Liu, Jun-Ming; Wang, Guang-Hou; Wan, Jian-Guo

    2016-03-01

    Recently, ferroelectric perovskite oxides have drawn much attention due to potential applications in the field of solar energy conversion. However, the power conversion efficiency of ferroelectric photovoltaic effect currently reported is far below the expectable value. One of the crucial problems lies in the two back-to-back Schottky barriers, which are formed at the ferroelectric-electrode interfaces and blocking most of photo-generated carriers to reach the outside circuit. Herein, we develop a new approach to enhance the ferroelectric photovoltaic effect by introducing the polarization-dependent interfacial coupling effect. Through inserting a semiconductor ZnO layer with spontaneous polarization into the ferroelectric ITO/PZT/Au film, a p-n junction with strong polarization-dependent interfacial coupling effect is formed. The power conversion efficiency of the heterostructure is improved by nearly two orders of magnitude and the polarization modulation ratio is increased about four times. It is demonstrated that the polarization-dependent interfacial coupling effect can give rise to a great change in band structure of the heterostructure, not only producing an aligned internal electric field but also tuning both depletion layer width and potential barrier height at PZT-ZnO interface. This work provides an efficient way in developing highly efficient ferroelectric-based solar cells and novel optoelectronic memory devices.

  4. Quantum anomalous Hall effect in magnetically modulated topological insulator/normal insulator heterostructures

    NASA Astrophysics Data System (ADS)

    Men'shov, V. N.; Tugushev, V. V.; Chulkov, E. V.

    2016-10-01

    We theoretically study how magnetic modulation can be used to manipulate the transport properties of heterostructures formed by a thin film of a three-dimensional topological insulator sandwiched between slabs of a normal insulator. Employing the k • p scheme, in the framework of a continual approach, we argue that electron states of the system are spin-polarized when ultrathin magnetic insertions are incorporated into the film. We demonstrate that (i) the spin-polarization magnitude depends strongly on the magnetic insertion position in the film and (ii) there is the optimal insertion position to realize quantum anomalous Hall effect, which is a function of the material parameters, the film thickness and the topological insulator/normal insulator interface potential. For the heterostructure with a pair of symmetrically placed magnetic insertions, we calculate a phase diagram that shows a series of transitions between distinct quantum regimes of transverse conductivity. We provide consistent interpretation of recent experimental findings in the context of our results.

  5. Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors

    NASA Astrophysics Data System (ADS)

    Cui, Delong; Hubbard, Seth M.; Pavlidis, Dimitris; Eisenbach, Andreas; Chelli, Cyril

    2002-06-01

    The impact of doping and metalorganic chemical vapour deposition growth conditions on the minority carrier lifetime of zinc- and carbon-doped InGaAs is reported. Room temperature photoluminescence measurements have been employed to obtain direct information on the non-radiative lifetime of the materials. Low growth temperature and low V/III ratio lead to the lower carrier lifetime of the carbon-doped InGaAs samples. InP/InGaAs heterostructure bipolar transistors were grown and fabricated using both zinc- and carbon-doped InGaAs layers as the base regions. The current gain values measured for these devices agree well with the values calculated from the carrier lifetime and mobility/diffusion coefficient measurements.

  6. All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures

    NASA Astrophysics Data System (ADS)

    Podoskin, A. A.; Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S.

    2017-01-01

    All-optical cells based on AlGaAs/GaAs/InGaAs laser heterostructures for a 905-nm wavelength have been developed, which operate in the regime of optical-power modulation by means of controlled generation switching between the Fabry-Perot cavity modes and high-Q closed mode. At a modulated power of 1.6 W, a mode-switching time of 1.2 ns and smaller is achieved.

  7. Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

    SciTech Connect

    Pooth, Alexander; Uren, Michael J.; Cäsar, Markus; Kuball, Martin; Martin, Trevor

    2015-12-07

    Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs.

  8. Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers

    SciTech Connect

    Gulyaev, D. V. Zhuravlev, K. S.; Bakarov, A. K.; Toropov, A. I.

    2015-02-15

    The photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistor heterostructures with donor-acceptor-doped AlGaAs barriers is studied. It is found that the introduction of additional p{sup +}-doped AlGaAs layers into the design brings about the appearance of new bands in the photoluminescence spectra. These bands are identified as resulting from transitions (i) in donor-acceptor pairs in doped AlGaAs layers and (ii) between the conduction subband and acceptor levels in the undoped InGaAs quantum well.

  9. Full solution-processed synthesis of all metal oxide-based tree-like heterostructures on fluorine-doped tin oxide for water splitting.

    PubMed

    Yin, Zongyou; Wang, Zheng; Du, Yaping; Qi, Xiaoying; Huang, Yizhong; Xue, Can; Zhang, Hua

    2012-10-09

    Well-ordered tree-like functional heterostructures, composed of the environmentally friendly oxides ZnO, TiO(2) , and CuO, on a fluorine-doped tin oxide substrate are realized by a practical, cost-effective, solution-processable strategy. The heterostructures are demonstrated to be an efficient light-harvesting medium in a photo-electrochemical cell to split water for hydrogen-gas generation, and the developed strategy provides a highly promising, cheap, green way to fabricate multifunctional hierarchically branched structures for many potential applications.

  10. Negative residual infrared photoconduction in the p-SiGe/Si heterostructures with selectively doped quantum wells

    NASA Astrophysics Data System (ADS)

    Gudenko, Yu. N.; Vainberg, V. V.; Vasetskii, V. M.; Poroshin, V. N.; Sarbey, O. G.; Chirchik, S. V.

    2012-10-01

    In the p-Si0.88Ge0.12/Si heterostructures with quantum wells delta-doped by boron, the decay kinetics of the lateral infrared photoconduction has been studied at low temperatures (15 to 50 K). Photoconduction was excited in the impurity spectral range by a CO2-laser pulse radiation. After switching off the light, both positive and negative residual photoconductions are observed. It is positive at low temperatures, but it changes to the negative one at T > 25 K. The higher the temperature and electric field are, the faster is the decay of the negative residual photoconduction. Qualitative explanation and quantitative description of the photoconduction relaxation take into account the competition between the recombination of free holes on the impurity levels and their thermal excitation from barrier traps into subbands of the quantum well. If the recombination time is much smaller than the excitation time from the traps, the negative residual photoconduction appears.

  11. Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures

    SciTech Connect

    Vasil'evskii, I. S. Galiev, G. B.; Klimov, E. A.; Pozela, K.; Pozela, J.; Juciene, V.; Suziedelis, A.; Zurauskiene, N.; Kersulis, S.; Stankevic, V.

    2011-09-15

    An increase in the electron mobility and drift velocity in high electric fields in quantum wells of selectively doped InAlAs/InGaAs/InAsAs heterostructures is obtained experimentally via controlling the composition of semiconductors forming the interface. The electron mobility at the interface in the In{sub 0.8}Ga{sub 0.2}As/In{sub 0.7}Al{sub 0.3}As metamorphic structure with a high molar fraction of In (0.7-0.8) is as high as 12.3 Multiplication-Sign 10{sup 3} cm{sup 2} V{sup -1} s{sup -1} at room temperature. An increase in the electron mobility by a factor of 1.1-1.4 is attained upon the introduction of thin (1-3 nm) InAs layers into a quantum well of selectively doped In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterostructures. A maximal drift velocity attains 2.5 Multiplication-Sign 10{sup 7} cm/s in electric fields of 2-5 kV/cm. The threshold field F{sub th} for the intervalley {Gamma}-L electron transfer (the Gunn effect) in the InGaAs quantum well is higher than in the bulk material by a factor of 2.5-3. The effect of two- to threefold decrease in the threshold field F{sub th} in the InGaAs quantum well is established upon increasing the molar fraction of In in the InAlAs barrier, as well as upon the introduction of thin InAs inserts into the InGaAs quantum well.

  12. Electrical control of magnetism via resistive switching in Pt/Mn3O4/Nb-doped SrTiO3 heterostructures

    NASA Astrophysics Data System (ADS)

    Zhao, Meng; Zhu, Yongdan; Li, Meiya; Zhang, Yuan; Tan, Xingyi; Hu, Cheng; Wang, Qiangwen; Zhang, Feng; Pu, Shizhou; Xiong, Rui

    2017-07-01

    Mn3O4 thin films were grown on Nb-doped (0 0 1) SrTiO3 (NSTO) single-crystal substrates by pulsed laser deposition to form Pt/Mn3O4/NSTO heterostructures. Pt/Mn3O4/NSTO devices exhibit bipolar resistive switching (RS) effect with maximum switching ratio of 104 and good endurance. When the resistance states of these devices are switched between the low resistance state (LRS) and the high resistance state (HRS), the saturation magnetization, remanent magnetization and coercive field of the Mn3O4 thin films can be modulated simultaneously. The electrical control of magnetism via resistive switching can be attributed to the process of charge trapping/detrapping and oxygen ion migration that leads to changes in the super-exchange interactions between Mn ions at the octahedral and tetrahedral positions. Our work provides a new avenue for exploration of the Mn3O4 resistive switching materials and is significant for understanding the mechanism of the RS effect and multifunctional devices.

  13. La-doped BaTiO{sub 3} heterostructures: Compensating the polarization discontinuity

    SciTech Connect

    Kumah, D. P.; Clarke, R.; Yacoby, Y.; Pauli, S. A.; Willmott, P. R.

    2013-12-01

    We demonstrate a route to manipulate the polarization and internal electric field of a complex oxide heterostructure using a layering sequence based on the LaAlO{sub 3}-SrTiO{sub 3} interface. By combining sensitive atomic-level mapping of the structure using direct x-ray phase-retrieval methods with theoretical modeling of the electrostatic charge and polarization, we have devised a novel single-domain polar heterostructure. We find that ionic rearrangement results in strain and free energy minimization, and eliminates the polarization discontinuity leading to a two-fold increase of the spontaneous polarization towards the surface of an ultra-thin single-domain BaTiO{sub 3} film.

  14. Charge transfer features and ferromagnetic order in semiconductor heterostructures δ-doped with manganese

    NASA Astrophysics Data System (ADS)

    Lugovykh, A. M.; Charikova, T. B.; Okulov, V. I.; Moiseev, K. D.; Kudryavtsev, Yu. A.

    2016-11-01

    The temperature and field dependences of the specific magnetization and magnetoresistance in heterostructures with a GaAs/Ga0.84In0.16As/GaAs quantum well and a δ-layer of atomic Mn in the barrier layer near the quantum well filled with holes are studied. A change in the resistance and magnetization behavior upon ordering of localized magnetic moments in the cap layer due to a change in the manganese ion distribution topology is detected.

  15. Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Sohal, S.; Edirisooriya, M.; Ogedengbe, O. S.; Petersen, J. E.; Swartz, C. H.; LeBlanc, E. G.; Myers, T. H.; Li, J. V.; Holtz, M.

    2017-09-01

    Iodine-doped CdMgTe/CdSeTe double heterostructures (DHs) have been grown by molecular beam epitaxy and studied using time-resolved photoluminescence (PL), focusing on absorber layer thickness of 2 μm. The n-type free carrier concentration was varied to ˜7 × 1015 cm-3, 8.4 × 1016 cm-3, and 8.4 × 1017 cm-3 using iodine as dopant in DHs. Optical injection at 1 × 1010 photons/pulse/cm2 to 3 × 1011 photons/pulse/cm2, corresponding to initial injection of photocarriers up to ˜8 × 1015 cm-3, was applied to examine the effects of excess carrier concentration on the PL lifetimes. Iodine-doped DHs exhibited an initial rapid decay followed by a slower decay at free carrier concentration of 7 × 1015 cm-3 and 8.4 × 1016 cm-3. The optical injection dependence of the carrier lifetimes for DHs was interpreted based on the Shockley-Read-Hall model. The observed decrease in lifetime with increasing n is consistent with growing importance of radiative recombination.

  16. ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity.

    PubMed

    Lu, Yanghua; Wu, Zhiqian; Xu, Wenli; Lin, Shisheng

    2016-12-02

    A ZnO quantum dot  photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W(-1) and detectivity of more than 1.02 × 10(13) Jones (Jones = cm Hz(1/2) W(-1)) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W(-1) to 1915 A W(-1) and the detectivity is improved from 5.8 × 10(12) to 1.0 × 10(13) Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.

  17. Carrier confinement observed at modulation-doped β-(Al x Ga1- x )2O3/Ga2O3 heterojunction interface

    NASA Astrophysics Data System (ADS)

    Oshima, Takayoshi; Kato, Yuji; Kawano, Naoto; Kuramata, Akito; Yamakoshi, Shigenobu; Fujita, Shizuo; Oishi, Toshiyuki; Kasu, Makoto

    2017-03-01

    A β-(Al x Ga1- x )2O3:Si/Ga2O3 modulation-doped structure was fabricated by direct β-(Al x Ga1- x )2O3 epitaxial growth on a (010) β-Ga2O3 substrate. Si on the order of 1018 cm-3 from adsorbed contaminants on the substrate surface was doped into the β-(Al x Ga1- x )2O3 layer. The heterojunction interface exhibited a confined sheet carrier density of ˜3 × 1012 cm-2, which is on the same order as that of AlGaAs/GaAs. The successful modulation doping for the β-(Al x Ga1- x )2O3/Ga2O3 heterostructure encourages the development of β-Ga2O3-based heterojunction field-effect transistors.

  18. Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures.

    PubMed

    Simon, John; Protasenko, Vladimir; Lian, Chuanxin; Xing, Huili; Jena, Debdeep

    2010-01-01

    Impurity-based p-type doping in wide-band-gap semiconductors is inefficient at room temperature for applications such as lasers because the positive-charge carriers (holes) have a large thermal activation energy. We demonstrate high-efficiency p-type doping by ionizing acceptor dopants using the built-in electronic polarization in bulk uniaxial semiconductor crystals. Because the mobile hole gases are field-ionized, they are robust to thermal freezeout effects and lead to major improvements in p-type electrical conductivity. The new doping technique results in improved optical emission efficiency in prototype ultraviolet light-emitting-diode structures. Polarization-induced doping provides an attractive solution to both p- and n-type doping problems in wide-band-gap semiconductors and offers an unconventional path for the development of solid-state deep-ultraviolet optoelectronic devices and wide-band-gap bipolar electronic devices of the future.

  19. Bolometric detection of magnetoplasma resonances in microwave absorption by two-dimensional electron systems based on doping layer conductivity measurements in GaAs/AlGaAs heterostructures

    SciTech Connect

    Dorozhkin, S. I. Sychev, D. V.; Kapustin, A. A.

    2014-11-28

    We have implemented a new bolometric method to detect resonances in magneto-absorption of microwave radiation by two-dimensional electron systems (2DES) in selectively doped GaAs/AlGaAs heterostructures. Radiation is absorbed by the 2DES and the thermally activated conductivity of the doping layer supplying electrons to the 2DES serves as a thermometer. The resonant absorption brought about by excitation of the confined magnetoplasma modes appears as peaks in the magnetic field dependence of the low-frequency impedance measured between the Schottky gate and 2DES.

  20. Transport in two-dimensional modulation-doped semiconductor structures

    NASA Astrophysics Data System (ADS)

    Das Sarma, S.; Hwang, E. H.; Kodiyalam, S.; Pfeiffer, L. N.; West, K. W.

    2015-05-01

    We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the remote ionized dopants, which must invariably be present in order to create the 2D electron gas at the GaAs-AlGaAs interface. The minimal model, assuming first-order Born scattering by random quenched remote dopant ions as the only scattering mechanism, gives a mobility much lower (by a factor of 3 or more) than that observed experimentally in many ultrahigh-mobility modulation-doped 2D systems, establishing convincingly that the model of uncorrelated scattering by independent random remote quenched dopant ions is often unable to describe the physical system quantitively. We theoretically establish that the consideration of spatial correlations in the remote dopant distribution can enhance the mobility by (up to) several orders of magnitudes in experimental samples. The precise calculation of the carrier mobility in ultrapure modulation-doped 2D semiconductor structures thus depends crucially on the unknown spatial correlations among the dopant ions in the doping layer which may manifest sample to sample variations even for nominally identical sample parameters (i.e., density, well width, etc.), depending on the details of the modulation-doping growth conditions.

  1. Anisotropic transport in modulation doped quantum well structures

    NASA Technical Reports Server (NTRS)

    Radulescu, D. C.; Wicks, G. W.; Schaff, W. J.; Calawa, A. R.; Eastman, L. F.

    1987-01-01

    The degree of anisotropy in the anisotropic electron transport that has been observed in GaAs modulation-doped quantum wells grown by MBE on Al(0.3)Ga(0.7)As is related to the thickness and growth parameters of this substrate, which is grown just prior to the inverted interface. It is presently observed that the inverted interface has an anisotropic roughness which affects the 77 K low field electron transport parallel to the interface, and gives rise to anisotropic electron scattering in the GaAs modulation-doped quantum well.

  2. Quantum Transport and Sub-Band Structure of Modulation-Doped GaAs/AlAs Core-Superlattice Nanowires.

    PubMed

    Irber, Dominik M; Seidl, Jakob; Carrad, Damon J; Becker, Jonathan; Jeon, Nari; Loitsch, Bernhard; Winnerl, Julia; Matich, Sonja; Döblinger, Markus; Tang, Yang; Morkötter, Stefanie; Abstreiter, Gerhard; Finley, Jonathan J; Grayson, Matthew; Lauhon, Lincoln J; Koblmüller, Gregor

    2017-08-09

    Modulation-doped III-V semiconductor nanowire (NW) heterostructures have recently emerged as promising candidates to host high-mobility electron channels for future high-frequency, low-energy transistor technologies. The one-dimensional geometry of NWs also makes them attractive for studying quantum confinement effects. Here, we report correlated investigations into the discrete electronic sub-band structure of confined electrons in the channel of Si δ-doped GaAs-GaAs/AlAs core-superlattice NW heterostructures and the associated signatures in low-temperature transport. On the basis of accurate structural and dopant analysis using scanning transmission electron microscopy and atom probe tomography, we calculated the sub-band structure of electrons confined in the NW core and employ a labeling system inspired by atomic orbital notation. Electron transport measurements on top-gated NW transistors at cryogenic temperatures revealed signatures consistent with the depopulation of the quasi-one-dimensional sub-bands, as well as confinement in zero-dimensional-like states due to an impurity-defined background disorder potential. These findings are instructive toward reaching the ballistic transport regime in GaAs-AlGaAs based NW systems.

  3. Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O3/Nb:SrTiO3 Heterostructures.

    PubMed

    Bai, Yu; Wang, Zhan Jie; Chen, Yan Na; Cui, Jian Zhong

    2016-12-07

    In this work, epitaxial Pb(Zr0.4Ti0.6)O3 (PZT) thin films with different thicknesses were deposited on Nb-doped SrTiO3 (NSTO) single-crystal substrates by chemical solution deposition (CSD), and their ferroelectric resistive switching behaviors were investigated. The results showed that the maximum ON/OFF ratio up to 850 could be obtained in the PZT/NSTO heterostructure with the 150 nm thick PZT film. On the basis of the Schottky-Simmons model and the modified semiconductor theory, we also evaluated the interfacial built-in field and the depletion layer at the PZT/NSTO interface, which can be modulated strongly by the ferroelectric polarization, but are independent of the thickness of the PZT thin films. It is clear that the ferroelectric resistive switching is related to the ferroelectric polarization and modulated by the thickness of ferroelectric films. Therefore, there is an optimal thickness of the PZT film for the maximum ON/OFF ratio due to the ferroelectricity and conductivity mutually restricting. It can be expected that by adjusting the ferroelectricity and conductivity of the ferroelectric thin film and its thickness, the maximum switching ratio can be further improved.

  4. Monolithic intracavity laser-modulator device fabrication using postgrowth processing of 1.55 μm heterostructures

    NASA Astrophysics Data System (ADS)

    Aimez, V.; Beauvais, J.; Beerens, J.; Ng, S. L.; Ooi, B. S.

    2001-11-01

    In this letter, we present the attractive characteristics of a fabrication method based on quantum-well intermixing induced by low energy ion implantation for the realization of photonic integrated circuits on GaInAsP-InP heterostructures. Intracavity electro-absorption modulators monolithically integrated with laser devices were fabricated, using this postgrowth technique. The modulator section of the integrated devices was blueshifted by 75 nm while keeping the laser section unshifted and preserving very low values of the lasing threshold current density. Modulation depths in excess of 10 dB/V at 1.55 μm were obtained on these integrated devices which incorporate both a modulator and a laser.

  5. Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures

    SciTech Connect

    Chel'nyi, A A; Aluev, A V; Maslov, S V

    2004-01-31

    The influence of cladding doping level on the characteristics of laser diodes, which are based on an AlGaInP/GaInP/GaAs system and emit at wavelengths of 670-680 nm, is studied. It is shown experimentally that, as the ratio of the cladding doping levels P/N increases, the inversion current density J{sub 0} and the differential gain {beta} also increase. A monotonic increase in the characteristic temperature T{sub 0} accompanies this process. The internal quantum yield {eta}{sub 0} of stimulated recombination has a maximum at P/N=2.1. Laser diodes with a mesastripe width of 100 {mu}m are manufactured. The cw radiation power emitted by them is as high as 1000 mW at an efficiency of 1.55 W A{sup -1}. (active media. lasers)

  6. Study of resistive switching and magnetism modulation in the Pt/CoFe2O4/Nb:SrTiO3 heterostructures

    NASA Astrophysics Data System (ADS)

    Wang, Qiangwen; Zhu, Yongdan; Liu, Xiaolian; Zhao, Meng; Wei, Maocai; Zhang, Feng; Zhang, Yuan; Sun, Beilei; Li, Meiya

    2015-08-01

    CoFe2O4 (CFO) thin films are epitaxially grown on Nb doped (001) SrTiO3 (NSTO) single-crystal substrates by pulsed laser deposition to form Pt/CFO/NSTO heterostructures. These heterostructures exhibit typical bipolar resistive switching effect with maximum switching ratio of 5 × 104, multi-level resistance states, excellent retention, and anti-fatigue properties. When the resistance states of the heterostructures are switched between low resistance state and high resistance state upon applying bias voltages, the saturation magnetization of the CFO films shows corresponding changes associated with the resistive switching. These close correlations between the resistive switching and the magnetization can be attributed to the electrons filling into and releasing from the defect energy levels introduced by oxygen vacancies in the CFO film. These results show potential application in the multi-functional magnetoelectric sensor and non-volatile multi-level resistive switching memory.

  7. Large current modulation and spin-dependent tunneling of vertical graphene/MoS2 heterostructures.

    PubMed

    Myoung, Nojoon; Seo, Kyungchul; Lee, Seung Joo; Ihm, G

    2013-08-27

    Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different heights of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene.

  8. Effect of boron doping on the rectification effect and photovoltaic performance of CdS/Si heterostructure based on Si nanoporous pillar array

    NASA Astrophysics Data System (ADS)

    Yan, Ling Ling; Wang, Xiao Bo; Liu, Wei Kang; Li, Xin Jian

    2015-07-01

    A series of CdS/Si heterostructures were prepared through growing B-doped CdS thin films on silicon nanoporous pillar array (Si-NPA) by a chemical bath deposition (CBD) method. The experimental data show that B-doping concentration of CdS thin films could be tuned effectively through controlling the mole ratio of [B]/[Cd] of the initial CBD solution without causing obvious variation of the crystal phase and surface morphology of CdS/Si-NPA. Both the electrical rectification and photovoltaic parameters of CdS/Si-NPA show strong dependence upon B-doping concentration, and the optimal characteristics are achieved for the samples prepared with [B]/[Cd] = 0.01. Compared with CdS/Si-NPA solar cells without B-doping, an increment over 300 times for energy conversion efficiency is realized. The mechanism for the efficiency increment is analyzed based on the effect of B-doping on the band structure of CdS/Si-NPA. These results indicate that B-doping might be an effective path for promoting the device performance of solar cells based on CdS/Si-NPA.

  9. Photovoltaic response in pristine WSe{sub 2} layers modulated by metal-induced surface-charge-transfer doping

    SciTech Connect

    Wi, Sungjin; Chen, Mikai; Li, Da; Nam, Hongsuk; Meyhofer, Edgar; Liang, Xiaogan

    2015-08-10

    We obtained photovoltaic response in pristine multilayer WSe{sub 2} by sandwiching WSe{sub 2} between top and bottom metals. In this structure, the work-function difference between the top metal and WSe{sub 2} plays a critical role in generating built-in potentials and photovoltaic responses. Our devices with Zn as top metal exhibit photo-conversion efficiencies up to 6.7% under 532 nm illumination and external quantum efficiencies in the range of 40%–83% for visible light. This work provides a method for generating photovoltaic responses in layered semiconductors without detrimental doping or exquisite heterostructures, and also advances the physics for modulating the band structures of such emerging semiconductors.

  10. Effect of an in-plane magnetic field on the photoluminescence spectrum of modulation-doped quantum wells and heterojunctions

    NASA Astrophysics Data System (ADS)

    Ashkinadze, B. M.; Linder, E.; Cohen, E.; Pfeiffer, L. N.

    2005-01-01

    The photoluminescence (PL) spectrum of modulation-doped GaAs/AlGaAs quantum wells and heterojunctions (HJ) is studied under a magnetic field (B‖) applied parallel to the two-dimensional electron gas (2DEG) layer. The effect of B‖ strongly depends on the electron-hole separation, and we revealed remarkable B‖ -induced modifications of the PL spectra in both types of heterostructures. A model considering the direct optical transitions between the conduction and valence subbands that are shifted in k -space under B‖ , accounts qualitatively for the observed spectral modifications. In the HJs, the 2DEG-hole PL intensity is strongly enhanced relatively to the bulk exciton PL with increasing B‖ . This means that the distance between the photoholes and the 2DEG decreases with increasing B‖ , and thus free holes are responsible for the 2DEG-hole PL.

  11. Visible-light-driven photoelectrochemical and photocatalytic performances of Cr-doped SrTiO3/TiO2 heterostructured nanotube arrays.

    PubMed

    Jiao, Zhengbo; Chen, Tao; Xiong, Jinyan; Wang, Teng; Lu, Gongxuan; Ye, Jinhua; Bi, Yingpu

    2013-01-01

    Well-aligned TiO2 nanotube arrays have become of increasing significance because of their unique highly ordered array structure, high specific surface area, unidirectional charge transfer and transportation features. However, their poor visible light utilization as well as the high recombination rate of photoexcited electron-hole pairs greatly limited their practical applications. Herein, we demonstrate the fabrication of visible-light-responsive heterostructured Cr-doped SrTiO3/TiO2 nanotube arrays by a simple hydrothermal method, which facilitate efficient charge separation and thus improve the photoelectrochemical as well as photocatalytic performances.

  12. Electrical bistability and negative differential resistance in single Sb-doped ZnO nanobelts/SiOx/p-Si heterostructured devices

    NASA Astrophysics Data System (ADS)

    Yang, Ya; Qi, Junjie; Guo, Wen; Qin, Zi; Zhang, Yue

    2010-03-01

    We report the electrical bistability and negative differential resistance (NDR) in single Sb-doped ZnO nanobelts/SiOx/p-type Si heterostructured devices. The current-voltage (I-V) characteristics of the devices were discussed in terms of the energy band diagram of the devices. The origin of the electrical bistability and NDR is suggested to be associated with the electric-field-induced charge transfer. The performance of the fabricated devices can be enhanced under the ultraviolet light illumination.

  13. The Stark effect on a bound hole in δ-acceptor doped GaAs/ Al xGa 1- xAs heterostructures

    NASA Astrophysics Data System (ADS)

    Łusakowski, J.; Friedland, K. J.; Ploog, K.

    2007-05-01

    There are only a few experimental reports on measurements of the Stark effect on shallow acceptors. We show that measurements of the degree of circular polarization of the luminescence originating from a free-to-bound Γ6→Γ8 transition allows us to determine the dipole moment of a substitutional acceptor in a crystal of Td symmetry. We suggest the performance of such experiments in a single GaAs/GaAlAs heterostructure δ-doped with acceptors. Thus we propose an experimental method for investigation of the Stark effect in solids.

  14. Mixed Carrier Conduction in Modulation-doped Field Effect Transistors

    NASA Technical Reports Server (NTRS)

    Schacham, S. E.; Haugland, E. J.; Mena, R. A.; Alterovitz, S. A.

    1995-01-01

    The contribution of more than one carrier to the conductivity in modulation-doped field effect transistors (MODFET) affects the resultant mobility and complicates the characterization of these devices. Mixed conduction arises from the population of several subbands in the two-dimensional electron gas (2DEG), as well as the presence of a parallel path outside the 2DEG. We characterized GaAs/AlGaAs MODFET structures with both delta and continuous doping in the barrier. Based on simultaneous Hall and conductivity analysis we conclude that the parallel conduction is taking place in the AlGaAs barrier, as indicated by the carrier freezeout and activation energy. Thus, simple Hall analysis of these structures may lead to erroneous conclusions, particularly for real-life device structures. The distribution of the 2D electrons between the various confined subbands depends on the doping profile. While for a continuously doped barrier the Shubnikov-de Haas analysis shows superposition of two frequencies for concentrations below 10(exp 12) cm(exp -2), for a delta doped structure the superposition is absent even at 50% larger concentrations. This result is confirmed by self-consistent analysis, which indicates that the concentration of the second subband hardly increases.

  15. The unconventional doping in YBa2Cu3O7-x/La0.7Ca0.3MnO3 heterostructures by termination control

    NASA Astrophysics Data System (ADS)

    Tra, V. T.; Huang, R.; Gao, X.; Chen, Y.-J.; Liu, Y. T.; Kuo, W. C.; Chin, Y. Y.; Lin, H. J.; Chen, J. M.; Lee, J. M.; Lee, J. F.; Shi, P. S.; Jiang, M. G.; Duan, C. G.; Juang, J. Y.; Chen, C. T.; Jeng, H. T.; He, Q.; Chuang, Y.-D.; Lin, J.-Y.; Chu, Y.-H.

    2017-01-01

    In strongly correlated oxides, heterostructures provide a powerful route to manipulate the charge, spin, orbital, and lattice degrees of freedom to create distinctive functionalities. In this work, we have achieved atomically precise interface control in YBa2Cu3O7-x/La0.7Ca0.3MnO3 (YBCO/LCMO) heterostructures and find a hidden effective doping. This mechanism is responsible for higher Tc in the sample with the MnO2-terminated interface than in that with the La0.7Ca0.3O-terminated interface. The MnO2-terminated sample also shows a larger magnetic moment of Mn together with a lower valence state. For more than a decade, the control of Tc in these heterostructures prior to this work has been solely via the variation of YBCO or LCMO thickness. This work hints at an alternative way of exploiting and exploring the interactions between superconductivity and magnetism in this system.

  16. Toward an Understanding of the Electric Field-Induced Electrostatic Doping in van der Waals Heterostructures: A First-Principles Study.

    PubMed

    Lu, Anh Khoa Augustin; Houssa, Michel; Radu, Iuliana P; Pourtois, Geoffrey

    2017-03-01

    Since the discovery of graphene, a broad range of two-dimensional (2D) materials has captured the attention of the scientific communities. Materials, such as hexagonal boron nitride (hBN) and the transition metal dichalcogenides (TMDs) family, have shown promising semiconducting and insulating properties that are very appealing for the semiconductor industry. Recently, the possibility of taking advantage of the properties of 2D-based heterostructures has been investigated for low-power nanoelectronic applications. In this work, we aim at evaluating the relation between the nature of the materials used in such heterostructures and the amplitude of the layer-to-layer charge transfer induced by an external electric field, as is typically present in nanoelectronic gated devices. A broad range of combinations of TMDs, graphene, and hBN has been investigated using density functional theory. Our results show that the electric field induced charge transfer strongly depends on the nature of the 2D materials used in the van der Waals heterostructures and to a lesser extent on the relative orientation of the materials in the structure. Our findings contribute to the building of the fundamental understanding required to engineer electrostatically the doping of 2D materials and to establish the factors that drive the charge transfer mechanisms in electron tunneling-based devices. These are key ingredients for the development of 2D-based nanoelectronic devices.

  17. Beyond modulation doping: Engineering a semiconductor to be ambipolar, or making an ON-OFF-ON transistor

    SciTech Connect

    Gupta, K. Das; Croxall, A. F.; Zheng, B.; Sfigakis, F.; Farrer, I.; Nicoll, C. A.; Beere, H. E.; Ritchie, D. A.

    2014-04-24

    Semiconductors are traditionaly either p-type or n-type, meaning that the mobile charge carriers in them are either 'holes' in the valence band or electrons in the conduction band. Ambipolar conduction implies that the experimenter should be able to populate the same channel with either electrons or holes in a controlled manner. This has been shown to be possible in newer materials like Graphene and some organic semiconductors. 'Ambipolarity' can open up new device possibilities as well as new ways to study fundamental scattering mechanisms in semiconductors. However, achieving this in a conventional high mobility structure like a GaAs-AlGaAs heterostructure/quantum well requires new thinking. It was realized, that to do this modulation doping must be given up and techniques to make an undoped heterostructure conduct, must be developed first. Such structures have been developed by only a few groups worldwide. They are of great interest to low temperature physicists working with Quantum Hall states and mesoscopic/nano structures in the ballistic regime. We discuss the reason behind this interest and the analysis of scattering mechanisms in such structures. Finally very recent experimental success in developing fully gate controlled ambipolar structures where both electron and hole mobilites exceed 1 million cm{sup 2}/Vs at low temperatures (T∼1Kelvin) are discussed. Such gated ambipolar structures can be used to analyse scattering mechanisms in ultra-high mobility 2dimensional electron and hole gases in a way that is not possible using other techniques.

  18. High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity

    SciTech Connect

    Gao, Yuanda; Shiue, Ren-Jye; Gan, Xuetao; Li, Luozhou; Peng, Cheng; Meric, Inanc; Wang, Lei; Szep, Attila; Walker, Dennis; Hone, James; Englund, Dirk

    2015-03-11

    Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and interchip communications.1-4 Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption, and modulation depth.5-11 However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications owing to its exceptional optical and electronic properties.12-14 Here, we demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modulation depth of 3.2 dB and a cutoff frequency of 1.2 GHz.

  19. Toward highly efficient electrocatalyst for Li–O2 batteries using biphasic N-doping cobalt@graphene multiple-capsule heterostructures

    DOE PAGES

    Tan, Guoqiang; Chong, Lina; Amine, Rachid; ...

    2017-04-12

    To promote lithium-oxygen batteries available for practical applications, the development of advanced cathode catalysts with low-cost, high activity and stable structural properties is demanded. Such development is rooted on certain intelligent catalyst-electrode design that fundamentally facilitates electronic and ionic transport, and improves oxygen diffusivity in a porous environment. Here we design a biphasic nitrogen-doped cobalt@graphene multiple-capsule heterostructure, combined with a flexible, stable porous electrode architecture, and apply it as promising cathodes for lithium-oxygen cells. The biphasic nitrogen-doping feature improves the electric conductivity and catalytic activity; the multiple-nanocapsule configuration makes high/uniform electro-active zones possible; furthermore, the colander-like porous electrode facilitates themore » oxygen diffusion, catalytic reaction, and stable deposition of discharge products. Finally, the electrode exhibits much improved electrocatalytic properties associated with unique morphologies of electrochemically grown lithium peroxides.« less

  20. Fulde-Ferrell states in inverse proximity-coupled magnetically doped topological heterostructures

    NASA Astrophysics Data System (ADS)

    Park, Moon Jip; Yang, Junyoung; Kim, Youngseok; Gilbert, Matthew J.

    2017-08-01

    We study the superconducting properties of the thin film BCS superconductor proximity coupled to a magnetically doped time-reversal invariant topological insulator (TI). Using mean-field theory, we show that Fulde-Ferrell (FF) pairing can be induced in the conventional superconductor through the inverse proximity effect (IPE). This occurs when the IPE of the TI to the superconductor is large enough that the normal bands of the superconductor possess a proximity induced spin-orbit coupling and magnetization. We find that the energetics of the different pairings are dependent on the coupling strength between the TI and the BCS superconductor and the thickness of the superconductor film. As the thickness of the superconductor film is increased, we find a crossover from the FF pairing to the BCS pairing phase. This is a consequence of the increased number of the superconducting bands, which favor the BCS pairing, implying that the FF phase can only be observed in the thin film limit. In addition, we also propose transport experiments that show distinct signatures of the FF phase.

  1. Interface Energetics and Charge Carrier Density Amplification by Sn-Doping in LaAlO3/SrTiO3 Heterostructure.

    PubMed

    Nazir, Safdar; Cheng, Jianli; Behtash, Maziar; Luo, Jian; Yang, Kesong

    2015-07-08

    Tailoring the two-dimensional electron gas (2DEG) at the n-type (TiO2)(0)/(LaO)(+1) interface between the polar LaAlO3 (LAO) and nonpolar SrTiO3 (STO) insulators can potentially provide desired functionalities for next-generation low-dimensional nanoelectronic devices. Here, we propose a new approach to tune the electronic and magnetic properties in the n-type LAO/STO heterostructure (HS) system via electron doping. In this work, we modeled four types of layer doped LAO/STO HS systems with Sn dopants at different cation sites and studied their electronic structures and interface energetics by using first-principles electronic structure calculations. We identified the thermodynamic stability conditions for each of the four proposed doped configurations with respect to the undoped LAO/STO interface. We further found that the Sn-doped LAO/STO HS system with Sn at Al site (Sn@Al) is energetically most favorable with respect to decohesion, thereby strengthening the interface, while the doped HS system with Sn at La site (Sn@La) exhibits the lowest interfacial cohesion. Moreover, our results indicate that all the Sn-doped LAO/STO HS systems exhibit the n-type conductivity with the typical 2DEG characteristics except the Sn@La doped HS system, which shows p-type conductivity. In the Sn@Al doped HS model, the Sn dopant exists as a Sn(4+) ion and introduces one additional electron into the HS system, leading to a higher charge carrier density and larger magnetic moment than that of all the other doped HS systems. An enhanced charge confinement of the 2DEG along the c-axis is also found in the Sn@Al doped HS system. We hence suggest that Sn@Al doping can be an effective way to enhance the electrical conduction and magnetic moment of the 2DEG in LAO/STO HS systems in an energetically favorable manner.

  2. Delta-doping of Semiconductors

    NASA Astrophysics Data System (ADS)

    Schubert, E. F.

    2005-08-01

    Part I: 1. Introduction E. F. Schubert; Part II: 2. Electronic structure of delta-doped semiconductors C. R. Proetto; Part III: 3. Recent progress in delta-like confinement of impurities in GaAs K. H. Ploog; 4. Flow-rate modulation epitaxy (FME) of III-V semiconductors T. Makimoto and Y. Horikoshi; 5. Gas source molecular beam epitaxy (MBE) of delta-doped III-V semiconductors D. Ritter; 6. Solid phase epitaxy for delta-doping in silicon I. Eisele; 7. Low temperature MBE of silicon H.-J. Gossmann; Part IV: 8. Secondary ion mass spectrometry of delta-doped semiconductors H. S. Luftmann; 9. Capacitance-voltage profiling E. F. Schubert; 10. Redistribution of impurities in III-V semiconductors E. F. Schubert; 11. Dopant diffusion and segregation in delta-doped silicon films H.-J. Gossmann; 12. Characterisation of silicon and delta-doped structures in GaAs R. C. Newman; 13. The DX-center in silicon delta-doped GaAs and AlxGa1-xAs P. M. Koenraad; Part V: 14. Luminescence and ellipsometry spectroscopy H. Yao and E. F. Schubert; 15. Photoluminescence and Raman spectroscopy of single delta-doped III-V semiconductor heterostructures J. Wagner and D. Richards; 16. Electron transport in delta-doped quantum wells W. T. Masselink; 17. Electron mobility in delta-doped layers P. M. Koenraad; 18. Hot electrons in delta-doped GaAs M. Asche; 19. Ordered delta-doping R. L. Headrick, L. C. Feldman and B. E. Weir; Part IV: 20. Delta-doped channel III-V field effect transistors (FETs) W.-P. Hong; 21. Selectively doped heterostructure devices E. F. Schubert; 22. Silicon atomic layer doping FET K. Nakagawa and K. Yamaguchi; 23. Planar doped barrier devices R. J. Malik; 24. Silicon interband and intersubband photodetectors I. Eisele; 25. Doping superlattice devices E. F. Schubert.

  3. Crystal-Orientation-Modulated Exchange Bias in Orthorhombic-YMnO3/La0.6Sr0.4MnO3 Multiferroic Heterostructures.

    PubMed

    Zheng, Dongxing; Gong, Junlu; Jin, Chao; Li, Peng; Bai, Haili

    2015-07-15

    The magnetic properties of the all-oxide multiferroic heterostructures composed of orthorhombic YMnO3 (YMO) with E-type antiferromagnetic and double-exchange ferromagnetic (FM) La0.6Sr0.4MnO3 (LSMO) were studied. An orientation-modulated exchange bias effect, which is related to the interfacial Mn-O-Mn bond angle, was discovered. Because of the large bond angle in YMO/LSMO(100) heterostructures, a strong exchange coupling at the interface is formed. This strong exchange coupling sustains an FM phase in YMO at the interface region. The FM phase with strong magnetocrystalline anisotropy contributes to the vertical shift and exchange bias effect in (100) orientation heterostructures. When LSMO (110) and (111) were layered with YMO, the Mn-O-Mn bond angle was reduced, leading to a weakened exchange coupling at the interface, and only a relatively small exchange bias at low temperatures was visible.

  4. Chemical sensing by band modulation of a black phosphorus/molybdenum diselenide van der Waals hetero-structure

    NASA Astrophysics Data System (ADS)

    Feng, Zhihong; Chen, Buyun; Qian, Shuangbei; Xu, Linyan; Feng, Liefeng; Yu, Yuanyuan; Zhang, Rui; Chen, Jiancui; Li, Qianqian; Li, Quanning; Sun, Chongling; Zhang, Hao; Liu, Jing; Pang, Wei; Zhang, Daihua

    2016-09-01

    We report on a new chemical sensor based on black phosphorus/molybdenum diselenide van der Waals hetero-junctions. Due to the atomically thin nature of two-dimensional (2D) materials, surface adsorption of gas molecules can effectively modulate the band alignment at the junction interface, making the device a highly sensitive detector for chemical adsorptions. Compared to sensors made of homogeneous nanomaterials, the hetero-junction demonstrates considerably lower detection limit and higher sensitivity toward nitrogen dioxide. Kelvin probe force microscopy and finite element simulations have provided experimental and theoretical explanations for the enhanced performance, proving that chemical adsorption can induce significant changes in band alignment and carrier transport behaviors. The study demonstrates the potential of van der Waals hetero-junction as a new platform for sensing applications, and provides more insights into the interaction between gaseous molecules and 2D hetero-structures.

  5. Spin-gapless and half-metallic ferromagnetism in potassium and calcium δ-doped GaN digital magnetic heterostructures for possible spintronic applications: insights from first principles

    NASA Astrophysics Data System (ADS)

    Du, Jiangtao; Dong, Shengjie; Zhou, Baozeng; Zhao, Hui; Feng, Liefeng

    2017-04-01

    The reports previously issued predominantly paid attention to the d-block magnetic elements δ-doped digital magnetic materials. In this work, GaN δ-doped with non-magnetic main group s-block elements K and Ca as digital magnetic heterostructures were purposed and explored theoretically. We found that K- and Ca-embedded GaN digital alloys exhibit spin-gapless and half-metallic ferromagnetic characteristics, respectively. All compounds obey the Slater-Pauling rule with diverse electronic and magnetic properties. For these digital ferromagnetic heterostructures, spin polarization occurs in nitrogen within a confined space around the δ-doped layer, demonstrating a hole-mediated two-dimensional magnetic phenomenon.

  6. Tailoring exchange couplings in magnetic topological-insulator/antiferromagnet heterostructures

    NASA Astrophysics Data System (ADS)

    He, Qing Lin; Kou, Xufeng; Grutter, Alexander J.; Yin, Gen; Pan, Lei; Che, Xiaoyu; Liu, Yuxiang; Nie, Tianxiao; Zhang, Bin; Disseler, Steven M.; Kirby, Brian J.; Ratcliff, William, II; Shao, Qiming; Murata, Koichi; Zhu, Xiaodan; Yu, Guoqiang; Fan, Yabin; Montazeri, Mohammad; Han, Xiaodong; Borchers, Julie A.; Wang, Kang L.

    2017-01-01

    Magnetic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures exhibiting Néel order in an antiferromagnetic CrSb and ferromagnetic order in Cr-doped (Bi,Sb)2Te3, we realize emergent interfacial magnetic phenomena which can be tailored through artificial structural engineering. Through deliberate geometrical design of heterostructures and superlattices, we demonstrate the use of antiferromagnetic exchange coupling in manipulating the magnetic properties of magnetic topological insulators. Proximity effects are shown to induce an interfacial spin texture modulation and establish an effective long-range exchange coupling mediated by antiferromagnetism, which significantly enhances the magnetic ordering temperature in the superlattice. This work provides a new framework on integrating topological insulators with antiferromagnetic materials and unveils new avenues towards dissipationless topological antiferromagnetic spintronics.

  7. Tailoring exchange couplings in magnetic topological-insulator/antiferromagnet heterostructures.

    PubMed

    He, Qing Lin; Kou, Xufeng; Grutter, Alexander J; Yin, Gen; Pan, Lei; Che, Xiaoyu; Liu, Yuxiang; Nie, Tianxiao; Zhang, Bin; Disseler, Steven M; Kirby, Brian J; Ratcliff Ii, William; Shao, Qiming; Murata, Koichi; Zhu, Xiaodan; Yu, Guoqiang; Fan, Yabin; Montazeri, Mohammad; Han, Xiaodong; Borchers, Julie A; Wang, Kang L

    2017-01-01

    Magnetic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures exhibiting Néel order in an antiferromagnetic CrSb and ferromagnetic order in Cr-doped (Bi,Sb)2Te3, we realize emergent interfacial magnetic phenomena which can be tailored through artificial structural engineering. Through deliberate geometrical design of heterostructures and superlattices, we demonstrate the use of antiferromagnetic exchange coupling in manipulating the magnetic properties of magnetic topological insulators. Proximity effects are shown to induce an interfacial spin texture modulation and establish an effective long-range exchange coupling mediated by antiferromagnetism, which significantly enhances the magnetic ordering temperature in the superlattice. This work provides a new framework on integrating topological insulators with antiferromagnetic materials and unveils new avenues towards dissipationless topological antiferromagnetic spintronics.

  8. Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts

    SciTech Connect

    Silenas, A.; Pozela, Yu. Pozela, K.; Juciene, V.; Vasil'evskii, I. S.; Galiev, G. B.; Pushkarev, S. S.; Klimov, E. A.

    2013-03-15

    The dependence of the electron mobility and drift velocity on the growth conditions, thickness, and doping of an InAs insert placed at the center of the quantum well in a selectively doped InAlAs/InGaAs/InAlAs heterostructure has been investigated. Record enhancement of the maximum drift velocity to (2-4) Multiplication-Sign 10{sup 7} cm/s in an electric field of 5 Multiplication-Sign 10{sup 3} V/cm has been obtained in a 17-nm-wide quantum well with an undoped 4-nm-thick InAs insert. In the structures with additional doping of the InAs insert, which facilitates an increase in the density of electrons in the quantum well to 4.0 Multiplication-Sign 10{sup 12} cm{sup -2}, the maximum drift velocity is as high as 2 Multiplication-Sign 10{sup 7} cm/s in an electric field of 7 Multiplication-Sign 10{sup 3} V/cm.

  9. Color-tunable electroluminescence from Eu-doped TiO(2)/p(+)-Si heterostructured devices: engineering of energy transfer.

    PubMed

    Zhu, Chen; Lv, Chunyan; Wang, Canxing; Sha, Yiping; Li, Dongsheng; Ma, Xiangyang; Yang, Deren

    2015-02-09

    We report on color-tunable electroluminescence (EL) from TiO(2):Eu/p(+)-Si heterostructured devices using different TiO(2):Eu films in terms of Eu content and annealing temperature. It is found that the Eu-related emissions are activated by the energy transferred from TiO(2) host via oxygen vacancies, at the price of weakened oxygen-vacancy-related emissions. Both the higher Eu content and the higher annealing temperature for TiO(2):Eu films facilitate the aforementioned energy transfer. In this context, the dominant EL from the TiO(2):Eu/p(+)-Si heterostructured devices can be transformed from oxygen-vacancy-related emissions into Eu-related emissions with increasing Eu-content and annealing temperature for TiO(2):Eu films, exhibiting different colors of emanated light. We believe that this work sheds light on developing silicon-based red emitters using the Eu-doped oxide semiconductor films.

  10. Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

    SciTech Connect

    Verma, Jai Islam, S. M.; Protasenko, Vladimir; Kumar Kandaswamy, Prem; Xing, Huili; Jena, Debdeep

    2014-01-13

    Efficient semiconductor optical emitters in the deep-ultraviolet spectral window are encountering some of the most deep rooted problems of semiconductor physics. In III-Nitride heterostructures, obtaining short-wavelength photon emission requires the use of wide bandgap high Al composition AlGaN active regions. High conductivity electron (n-) and hole (p-) injection layers of even higher bandgaps are necessary for electrical carrier injection. This approach requires the activation of very deep dopants in very wide bandgap semiconductors, which is a difficult task. In this work, an approach is proposed and experimentally demonstrated to counter the challenges. The active region of the heterostructure light emitting diode uses ultrasmall epitaxially grown GaN quantum dots. Remarkably, the optical emission energy from GaN is pushed from 365 nm (3.4 eV, the bulk bandgap) to below 240 nm (>5.2 eV) because of extreme quantum confinement in the dots. This is possible because of the peculiar bandstructure and band alignments in the GaN/AlN system. This active region design crucially enables two further innovations for efficient carrier injection: Tunnel injection of carriers and polarization-induced p-type doping. The combination of these three advances results in major boosts in electroluminescence in deep-ultraviolet light emitting diodes and lays the groundwork for electrically pumped short-wavelength lasers.

  11. CONTROL OF LASER RADIATION PARAMETERS: Interferometric modulation in an optical amplifier based on an InGaAsP/lnP heterostructure

    NASA Astrophysics Data System (ADS)

    Luc, Vu V.; Duraev, V. P.; Eliseev, P. G.; Nedelin, E. T.; Tsotsoriya, M. V.

    1992-07-01

    Optical amplifiers made of laser diodes can be used as fast switches and modulators of the transmitted light. An "interferometric" modulation variant is interesting in this application: a part of the input radiation propagates along a passive emitter layer and interferes at the output with a part transmitted by an amplifying region. An optical amplifier operating in the 1.3-μm range made of an InGaAsP/lnP heterostructure is used as an example to show that such an interferometric variant can be used to achieve separately amplitude and phase modulation, and to increase the slope of the amplitude characteristic.

  12. Study of resistive switching and magnetism modulation in the Pt/CoFe{sub 2}O{sub 4}/Nb:SrTiO{sub 3} heterostructures

    SciTech Connect

    Wang, Qiangwen; Zhao, Meng; Wei, Maocai; Zhang, Feng; Zhang, Yuan; Sun, Beilei; Li, Meiya E-mail: myli@whu.edu.cn; Liu, Xiaolian

    2015-08-10

    CoFe{sub 2}O{sub 4} (CFO) thin films are epitaxially grown on Nb doped (001) SrTiO{sub 3} (NSTO) single-crystal substrates by pulsed laser deposition to form Pt/CFO/NSTO heterostructures. These heterostructures exhibit typical bipolar resistive switching effect with maximum switching ratio of 5 × 10{sup 4}, multi-level resistance states, excellent retention, and anti-fatigue properties. When the resistance states of the heterostructures are switched between low resistance state and high resistance state upon applying bias voltages, the saturation magnetization of the CFO films shows corresponding changes associated with the resistive switching. These close correlations between the resistive switching and the magnetization can be attributed to the electrons filling into and releasing from the defect energy levels introduced by oxygen vacancies in the CFO film. These results show potential application in the multi-functional magnetoelectric sensor and non-volatile multi-level resistive switching memory.

  13. An In/sub 0. 52/Al/sub 0. 48/As/n/sup +/-In/sub 0. 53/Ga/sub 0. 47/As MISFET with a modulation-doped channel

    SciTech Connect

    DelAlamo, J.A. . Dept. of Electrical Engineering and Computer Science); Mizutani, T. )

    1989-08-01

    A heterostructure metal-insulator-semiconductor field-effect transistor (MISFET) with a modulation-doped channel is proposed. In this device, a very thin undoped subchannel is located between the undoped wide-bandgap insulator and a thin heavily doped channel. In the depletion mode of operation, electron transport takes place along the heavily doped channel. When the device enters the accumulation mode of operation, electrons pile up against the heterointerface in the high-mobility undoped subchannel. This should result in markedly improved transport characteristics at the onset of accumulation. The concept is demonstrated in the In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As system on InP.

  14. Axial Ge/Si nanowire heterostructure tunnel FETs

    SciTech Connect

    Picraux, Sanuel T; Daych, Shadi A

    2010-01-01

    The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

  15. Effect of doping and chemical ordering on the optoelectronic properties of complex oxides: Fe2O3-V2O3 solid solutions and hetero-structures.

    PubMed

    Nayyar, Iffat H; Chamberlin, Sara E; Kaspar, Tiffany C; Govind, Niranjan; Chambers, Scott A; Sushko, Peter V

    2017-01-04

    The electronic and optical properties of α-(Fe1-xVx)2O3 at low (x = 0.04) and high (x = 0.5) doping levels are investigated using a combination of periodic and embedded cluster approaches, and time-dependent density functional theory. At low V concentrations the onset of the optical absorption is ∼0.5 eV (i.e., nearly 1.6 eV lower than that in pure α-Fe2O3) and corresponds to the electron transitions from V 3d to Fe 3d* orbitals. At high V concentrations, optical absorption energies and intensities are sensitive to specific arrangements of Fe and V atoms and their spin configuration that determine Fe-V hybridization. The onset of the lowest inter-vanadium absorption band in the case of Fe2O3/V2O3 hetero-structures is as low as ∼0.3 eV and the corresponding peak is at ∼0.7 eV. In contrast, in the case of solid solutions this peak has lower intensity and is shifted to higher energy (∼1.2 eV). Analysis of the orbital character of electronic excitation suggests that Fe2O3/V2O3 hetero-structures absorb light much more effectively than random alloys, thus promoting efficient photo-induced carrier generation. These predictions can be tested in α-(Fe1-xVx)2O3 thin films synthesized with well-controlled spatial distribution of Fe and V species.

  16. Photoinduced field modulation in multiquantum well heterostructures: A new photocurrent gain mechanism

    NASA Astrophysics Data System (ADS)

    Ripamonti, Giancarlo; Capasso, Federico; Tsang, Won-Tien; Hutchinson, Albert L.

    A new photocurrent gain mechanism in multiquantum well structures has been observed. Unlike conventional photoconductors, the gain in these devices is caused not by a modulation of the conductivity, but by a modulation of the electric field. The physical basis of this phenomenon is the partial screening of the electric field in the wells due to the pile-up of photocarriers. At constant bias voltage this leads to an enhancement of the field in the barrier layers. In structures with injecting contacts this mechanism enhances electron injection and therefore gives rise to photocurrent gain.

  17. Experimental and Theoretical Studies of Phase Modulation in Yb-doped Fiber Amplifiers

    DTIC Science & Technology

    2012-04-01

    14. ABSTRACT We present detailed studies of the effect of sinusoidal phase modulation on stimulated Brillouin scattering (SBS) in ytterbium -doped...studies of the effect of sinusoidal phase modulation on stimulated Brillouin scattering (SBS) in ytterbium -doped fiber amplifiers. Based on a time...which is limited by solubility limits of ytterbium as well as associated photodarkening effects. Similarly, power scaling in single-frequency fiber

  18. Electric field modulation of the band structure in MoS2/WS2 van der waals heterostructure

    NASA Astrophysics Data System (ADS)

    Li, Wei; Wang, Tianxing; Dai, Xianqi; Wang, Xiaolong; Zhai, Caiyun; Ma, Yaqiang; Chang, Shanshan; Tang, Yanan

    2017-01-01

    Using density functional theory calculations, we investigate the bandstructure of MoS2/WS2 van der waals heterostructure by applying external electric field perpendicular to the layers. It is demonstrated that the MoS2/WS2 is a type-II heterostructure, and therefore the electrons and holes are spatially separated. The band gap of MoS2/WS2 heterostructure continuously decreases with increasing external electric field, eventually a transition from semiconductor to metal is observed. Applying external electric field along +z direction and -z directions has different effects on the band gap due to the intrinsic spontaneous polarization in MoS2/WS2 heterostructure. The calculated result indicates that the band inversion in MoS2/WS2 heterostructure can be induced by changing the strength of the external electric field. The external electric field can significantly tune the band offsets almost linearly and modify the band alignment between MoS2 and WS2. The present study would open a new avenue for application of such transition-metal dichalcogenides heterostructures in future nano- and optoelectronics.

  19. A review of nano-optics in metamaterial hybrid heterostructures

    SciTech Connect

    Singh, Mahi R.

    2014-03-31

    We present a review for the nonlinear nano-optics in quantum dots doped in a metamaterial heterostructure. The heterostructure is formed by depositing a metamaterial on a dielectric substrate and ensemble of noninteracting quantum dots are doped near the heterostructure interface. It is shown that there is enhancement of the second harmonic generation due to the surface plasmon polaritons field present at the interface.

  20. Thermoelectric Properties of Complex Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Cain, Tyler Andrew

    Thermoelectrics are a promising energy conversion technology for power generation and cooling systems. The thermal and electrical properties of the materials at the heart of thermoelectric devices dictate conversion efficiency and technological viability. Studying the fundamental properties of potentially new thermoelectric materials is of great importance for improving device performance and understanding the electronic structure of materials systems. In this dissertation, investigations on the thermoelectric properties of a prototypical complex oxide, SrTiO3, are discussed. Hybrid molecular beam epitaxy (MBE) is used to synthesize La-doped SrTiO3 thin films, which exhibit high electron mobilities and large Seebeck coefficients resulting in large thermoelectric power factors at low temperatures. Large interfacial electron densities have been observed in SrTiO3/RTiO 3 (R=Gd,Sm) heterostructures. The thermoelectric properties of such heterostructures are investigated, including the use of a modulation doping approach to control interfacial electron densities. Low-temperature Seebeck coefficients of extreme electron-density SrTiO3 quantum wells are shown to provide insight into their electronic structure.

  1. Anisotropic transport in modulation-doped quantum-well structures

    NASA Technical Reports Server (NTRS)

    Radulescu, D. C.; Wicks, G. W.; Schaff, W. J.; Calawa, A.R.; Eastman, L. F.

    1987-01-01

    Anisotropic electron transport has been observed in GaAs modulation-doped quantum wells grown by molecular-beam epitaxy on a thick (001) Al(0.3)Ga(0.7)As buffer grown at 620 C. Thicker quantum wells (150, 200, and 300 A) show progressively less anisotropy, which vanishes for a 300-A quantum well. The degree of anisotropy is also reduced or eliminated by suspending growth of the Al(0.3)Ga(0.7)As for a period of 300 s prior to growing the GaAs quantum well. Growing the Al(0.3)Ga(0.7)As buffer at higher temperatures (680 C) also reduces the degree of anisotropy. Higher two-dimensional electron gas sheet densities result in less anisotropy.The anisotropy is eliminated by replacing the thick Al(0.3)Ga(0.7)As buffer with a periodic multilayer structure comprising 15 A of GaAs and 200 A of Al(0.3)Ga(0.7)As. The degree of anisotropy is related to the thickness and growth parameters of the Al(0.3)Ga(0.7)As layer grown just prior to the growth of the GaAs.

  2. Fabrication and characterization of InAIAs/InGaAs striped-channel modulation doped field effect transistors

    SciTech Connect

    Grundbacher, R.; Fay, P.; Adesida, I.

    1994-11-01

    Striped-channel modulation-doped field effect transistors (MODFETs), in which the transport of electrons from source to drain is restricted to multiple parallel channels, have been fabricated on a lattice-matched InAIAs/InGaAs heterostructure and characterized at dc and rf frequencies. dc performance of the striped-channel devices shows increased transconductance when normalized with the actual width of the striped channels. This may be attributed to improved control of electron concentrations in the channels since the depletion layer induced by the controlling gate is not only from above, but from below and in lateral directions as well, resulting in improved electron confinement. A reduction of output conductance of the striped-channel device is observed when compared to a conventional MODFET. This is interpreted to be a result of an enhanced barrier between the buffer and channel layers of the striped-channel device, which reduces the injection of hot electrons into the buffer. rf characteristics of the devices show a reduction of cutoff frequency for devices having smaller channels. dc measurements at cryogenic temperatures were performed to investigate the possibility of mobility enhancement in the stripe-channel devices. 9 refs., 8 figs.

  3. Heterodimensional Schottky contacts to modulation-doped heterojunction with application to photodetection

    NASA Astrophysics Data System (ADS)

    Seddik, Amro Anwar

    The growing technological demand for high speed and compact integrated electronics and Optics is a pressing challenge. Speed and compactness necessitate low power consumption semiconductors with high transport mobility carriers, with potential of ultra large-scale integration of electronic and Optoelectronics circuitry. One avenue to fulfill these requirements is to utilize reduced dimensionality where carriers are spatially confined to less than three-dimensions, causing their energy levels to become quantized and their transport favorably affected. With recent progress in semiconductor growth and processing technologies low dimensionality has become practically realizable, this makes the study of contact properties to these systems increasingly important. In this work we study the contact between a low- dimensional semiconductor structure and a three- dimensional metal and the application of such a contact in photodetection. We theoretically derive the thermionic emission current for Schottky contact to two-dimensional and one-dimensional structures. The derivation underscores the discrete nature of low-dimensional structures and shows that the thermionic emission current is reduced by a factor exponentially proportional to the first quantized energy level. We also propose and formulate, for the first time, a physical phenomenon in two-dimensional structures created by modulation doping of a heterojunction, which is the effect of the cloud of electrons in the small bandgap material on the thermionic emission current. We have named this the electron- electron cloud effect; we show that this interaction increases the effective Schottky barrier height in a fashion counter to the image force lowering mechanism. In order to realize Schottky contact to low-dimensional structures, we have fabricated a novel Heterojunction Metal-Semiconductor-Metal (HMSM) photodetector. Experimental characterization and the general trends of the behavior of the HMSM devices are presented

  4. Modulation of electronic properties of silicon carbide nanotubes via sulphur-doping: An ab initio study

    NASA Astrophysics Data System (ADS)

    Singh, Ram Sevak; Solanki, Ankit

    2016-03-01

    Silicon carbide nanotubes (SiCNTs) have received a great deal of scientific and commercial interest due to their intriguing properties that include high temperature stability and electronic properties. For their efficient and widespread applications, tuning of electronic properties of SiCNTs is an attractive study. In this article, electronic properties of sulphur doped (S-doped) zigzag (9 , 0) SiCNT is investigated by ab initio calculations based on density functional theory (DFT). Energy band structures and density of states of fully optimized undoped and doped structures with varying dopant concentration are calculated. S-doped on C-site of the nanotube exhibits a monotonic reduction of energy gap with increase in dopant concentration, and the nanotube transforms from semiconductor to metal at high dopant concentration. In case of S-doped on Si-site doping has less influence on modulating electronic structures, which results in reduction of energy gap up to a moderate doping concentration. Importantly, S preferential substitutes of Si-sites and the nanotube with S-doped on Si-site are energetically more stable as compared to the nanotube with S-doped on C-site. The study of tunable electronic properties in S-doped SiCNT may have potential in fabricating nanoelectronic devices, hydrogen storage and gas sensing applications.

  5. Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base

    NASA Astrophysics Data System (ADS)

    Shen, C.; Wang, L. G.; Zheng, H. Z.; Zhu, H.; Chen, L.; Zhao, J. H.

    2011-05-01

    A type of manganese impurity center with two holes bound in it is disclosed in a lightly Mn-doped base layer of an n-i-p-i-n heterostructure. In addition to the intensively investigated (e, AMn0) peak, a photoluminescence (PL) peak appears at 820.3 nm under zero bias and is continuously shifted to 822.5 nm by negatively biasing the structure. Its circular polarization has the same polarity as PL (e, AMn0), and has a magnetic dependence fitted by a paramagnetic Brillouin function with S = 1/2 and g = 2.09. These observations are consistent with the physical picture that in the AMn+ center both the - 3/2 and the - 1/2 holes occupy the lowest 1S hydrogenic orbit with their spins parallel to each other and antiparallel to the 5/2 local spin of the 3d shell. This spin coupling picture in the AMn+ center has been confirmed by a modified numerical calculation based upon effective mass theory. The feature of the ability to tune the impurity level of the AMn+ center makes it attractive for optically and electrically manipulating local magnetic spins in semiconductors.

  6. Locking of self-oscillation frequency by pump modulation in an erbium-doped fiber laser

    NASA Astrophysics Data System (ADS)

    Pisarchik, A. N.; Barmenkov, Yu. O.

    2005-10-01

    Frequency locking of self-oscillations in a diode-pumped erbium-doped fiber laser by external modulation of the diode current is studied experimentally. The coexistence of locking and unlocking regimes is detected. The condition for onset of the bistability and dependences of the frequency detuning on the modulation frequency and amplitude are established. Transitions to torus-chaos are also demonstrated.

  7. Demonstration of β-(Al x Ga1- x )2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Ahmadi, Elaheh; Koksaldi, Onur S.; Zheng, Xun; Mates, Tom; Oshima, Yuichi; Mishra, Umesh K.; Speck, James S.

    2017-07-01

    β-(Al x Ga1- x )2O3/β-Ga2O3 heterostructures were grown via plasma-assisted molecular beam epitaxy. The β-(Al x Ga1- x )2O3 barrier was partially doped by Ge to achieve a two-dimensional electron gas (2DEG) in Ga2O3. The formation of the 2DEG was confirmed by capacitance-voltage measurements. The impact of Ga-polishing on both the surface morphology and the reduction of the unintentionally incorporated Si at the growth interface was investigated using atomic force microscopy and secondary-ion mass spectrometry. Modulation doped field-effect transistors were fabricated. A maximum current density of 20 mA/mm with a pinch-off voltage of -6 V was achieved on a sample with a 2DEG sheet charge density of 1.2 × 1013 cm-2.

  8. All-optical Mach-Zehnder modulator using a photochromic dye-doped polymer

    NASA Astrophysics Data System (ADS)

    Kang, Jae-Wook; Kim, Jang-Joo; Kim, Eunkyoung

    2002-03-01

    An all-optical Mach-Zehnder modulator is demonstrated which is composed of a polymer waveguide doped with a photochromic dye in the core and a thick light blocking metal layer on it. The metal layer was opened on one arm of the Mach-Zehnder modulator, so that only one arm of the modulator could be irradiated by modulation light, thus allowing a differential phase shift. The optical modulator exhibited an extinction ratio of about -12 dB at a wavelength of 1.55 μm. A simple kinetic model developed to delineate the refractive index change in the dye-doped polymer film was applied to predict the evolution of the modulation characteristics.

  9. Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping

    DOE PAGES

    Ming, Fangfei; Mulugeta Amare, Daniel; Tu, Weisong; ...

    2017-03-07

    Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing chemical disorder. Here we successfully exploit a modulation doping scheme to uncover, in conjunction with a scanning tunnelling microscope tip-assist, a hidden equilibrium phase in a hole-doped bilayer of Sn on Si(111). This new phase is intrinsically phase separated into insulating domains with polar and nonpolar symmetries. Itsmore » formation involves a spontaneous symmetry breaking process that appears to be electronically driven, notwithstanding the lack of metallicity in this system. This modulation doping approach allows access to novel phases of matter, promising new avenues for exploring competing quantum matter phases on a silicon platform.« less

  10. Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping

    PubMed Central

    Ming, Fangfei; Mulugeta, Daniel; Tu, Weisong; Smith, Tyler S.; Vilmercati, Paolo; Lee, Geunseop; Huang, Ying-Tzu; Diehl, Renee D.; Snijders, Paul C.; Weitering, Hanno H.

    2017-01-01

    Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing chemical disorder. Here we successfully exploit a modulation doping scheme to uncover, in conjunction with a scanning tunnelling microscope tip-assist, a hidden equilibrium phase in a hole-doped bilayer of Sn on Si(111). This new phase is intrinsically phase separated into insulating domains with polar and nonpolar symmetries. Its formation involves a spontaneous symmetry breaking process that appears to be electronically driven, notwithstanding the lack of metallicity in this system. This modulation doping approach allows access to novel phases of matter, promising new avenues for exploring competing quantum matter phases on a silicon platform. PMID:28266499

  11. Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping.

    PubMed

    Ming, Fangfei; Mulugeta, Daniel; Tu, Weisong; Smith, Tyler S; Vilmercati, Paolo; Lee, Geunseop; Huang, Ying-Tzu; Diehl, Renee D; Snijders, Paul C; Weitering, Hanno H

    2017-03-07

    Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing chemical disorder. Here we successfully exploit a modulation doping scheme to uncover, in conjunction with a scanning tunnelling microscope tip-assist, a hidden equilibrium phase in a hole-doped bilayer of Sn on Si(111). This new phase is intrinsically phase separated into insulating domains with polar and nonpolar symmetries. Its formation involves a spontaneous symmetry breaking process that appears to be electronically driven, notwithstanding the lack of metallicity in this system. This modulation doping approach allows access to novel phases of matter, promising new avenues for exploring competing quantum matter phases on a silicon platform.

  12. Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping

    NASA Astrophysics Data System (ADS)

    Ming, Fangfei; Mulugeta, Daniel; Tu, Weisong; Smith, Tyler S.; Vilmercati, Paolo; Lee, Geunseop; Huang, Ying-Tzu; Diehl, Renee D.; Snijders, Paul C.; Weitering, Hanno H.

    2017-03-01

    Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing chemical disorder. Here we successfully exploit a modulation doping scheme to uncover, in conjunction with a scanning tunnelling microscope tip-assist, a hidden equilibrium phase in a hole-doped bilayer of Sn on Si(111). This new phase is intrinsically phase separated into insulating domains with polar and nonpolar symmetries. Its formation involves a spontaneous symmetry breaking process that appears to be electronically driven, notwithstanding the lack of metallicity in this system. This modulation doping approach allows access to novel phases of matter, promising new avenues for exploring competing quantum matter phases on a silicon platform.

  13. Biaxial tensile strain modulates magnetic properties of the 3d transition metal doped stanene

    NASA Astrophysics Data System (ADS)

    Dai, Xian-Qi; Zhao, Ming-Yu; Zhao, Ru-Meng; Li, Wei

    2017-06-01

    Utilizing first-principle calculations, the biaxial tensile strain modulating magnetic states and electronic structures of transition metal (TM) (i.e., Mn, Fe, Sc, Ni and Ti) atoms doped in stanene are investigated. It shows that Mn and Fe doped stanene systems are magnetic, while the Sc, Ti and Ni doped stanene systems are nonmagnetic. When the biaxial tensile strain increases, a weaker antiferromagnetic coupling between the nearest neighbor (NN) Sn atoms and Mn (Fe, Ti) atom is observed. For Sc and Ni doped stanene systems, the biaxial strain doesn't introduce spin polarization for the TM atoms. In a word, the TM atoms doped stanene systems may manifest potential applications in nanoelectronics, spintronics and magnetic storage devices.

  14. The modulation of Schottky barriers of metal-MoS2 contacts via BN-MoS2 heterostructures.

    PubMed

    Su, Jie; Feng, Liping; Zhang, Yan; Liu, Zhengtang

    2016-06-22

    Using first-principles calculations within density functional theory, we systematically studied the effect of BN-MoS2 heterostructure on the Schottky barriers of metal-MoS2 contacts. Two types of FETs are designed according to the area of the BN-MoS2 heterostructure. Results show that the vertical and lateral Schottky barriers in all the studied contacts, irrespective of the work function of the metal, are significantly reduced or even vanish when the BN-MoS2 heterostructure substitutes the monolayer MoS2. Only the n-type lateral Schottky barrier of Au/BN-MoS2 contact relates to the area of the BN-MoS2 heterostructure. Notably, the Pt-MoS2 contact with n-type character is transformed into a p-type contact upon substituting the monolayer MoS2 by a BN-MoS2 heterostructure. These changes of the contact natures are ascribed to the variation of Fermi level pinning, work function and charge distribution. Analysis demonstrates that the Fermi level pinning effects are significantly weakened for metal/BN-MoS2 contacts because no gap states dominated by MoS2 are formed, in contrast to those of metal-MoS2 contacts. Although additional BN layers reduce the interlayer interaction and the work function of the metal, the Schottky barriers of metal/BN-MoS2 contacts still do not obey the Schottky-Mott rule. Moreover, different from metal-MoS2 contacts, the charges transfer from electrodes to the monolayer MoS2, resulting in an increment of the work function of these metals in metal/BN-MoS2 contacts. These findings may prove to be instrumental in the future design of new MoS2-based FETs with ohmic contact or p-type character.

  15. Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h-BN Heterostructure.

    PubMed

    Joo, Min-Kyu; Moon, Byoung Hee; Ji, Hyunjin; Han, Gang Hee; Kim, Hyun; Lee, Gwanmu; Lim, Seong Chu; Suh, Dongseok; Lee, Young Hee

    2016-10-12

    Layered hexagonal boron nitride (h-BN) thin film is a dielectric that surpasses carrier mobility by reducing charge scattering with silicon oxide in diverse electronics formed with graphene and transition metal dichalcogenides. However, the h-BN effect on electron doping concentration and Schottky barrier is little known. Here, we report that use of h-BN thin film as a substrate for monolayer MoS2 can induce ∼6.5 × 10(11) cm(-2) electron doping at room temperature which was determined using theoretical flat band model and interface trap density. The saturated excess electron concentration of MoS2 on h-BN was found to be ∼5 × 10(13) cm(-2) at high temperature and was significantly reduced at low temperature. Further, the inserted h-BN enables us to reduce the Coulombic charge scattering in MoS2/h-BN and lower the effective Schottky barrier height by a factor of 3, which gives rise to four times enhanced the field-effect carrier mobility and an emergence of metal-insulator transition at a much lower charge density of ∼1.0 × 10(12) cm(-2) (T = 25 K). The reduced effective Schottky barrier height in MoS2/h-BN is attributed to the decreased effective work function of MoS2 arisen from h-BN induced n-doping and the reduced effective metal work function due to dipole moments originated from fixed charges in SiO2.

  16. Electric field modulated conduction mechanism in Al/BaTiO3/La0.67Sr0.33MnO3 heterostructures

    NASA Astrophysics Data System (ADS)

    Zheng, Dongxing; Li, Dong; Gong, Junlu; Jin, Chao; Li, Peng; Zhang, Xixiang; Bai, Haili

    2017-08-01

    Mediating a metastable state is a promising way to achieve a giant modulation of physical properties in artificial heterostructures. A metastable state La0.67Sr0.33MnO3 (LSMO) layer suffering tensile strain was grown on MgO substrates. Incorporating with the ferroelectric BaTiO3 (BTO) layer, an accumulation or depletion state controlled by electric fields can be formed at the BTO/LSMO interface, which drives a switching of the conduction mechanism between space charge limited conduction and Poole-Frenkel emission, corresponding to the low and high resistance states. Our results lighten an effective way for electric-field modulated resistance states in multiferroic magnetoelectric devices.

  17. Emission of terahertz radiation from GaN/AlGaN heterostructure under electron heating in lateral electric field

    NASA Astrophysics Data System (ADS)

    Shalygin, V. A.; Vorobjev, L. E.; Firsov, D. A.; Sofronov, A. N.; Melentyev, G. A.; Lundin, W. V.; Sakharov, A. V.; Tsatsulnikov, A. F.

    2013-12-01

    Spontaneous emission of terahertz radiation from modulation-doped AlGaN/GaN heterostructure under conditions of heating of a two-dimensional electron gas in the lateral electric field has been studied. The experimental data on the field dependence of the integral intensity of THz emission is compared with the theoretical simulation of blackbody-like emission from hot 2D electrons. Complementary transport measurements have been carried out to determine the dependence of effective electron temperature on electric field.

  18. Magnetic modulation doping in topological insulators toward higher-temperature quantum anomalous Hall effect

    SciTech Connect

    Mogi, M. Yoshimi, R.; Yasuda, K.; Kozuka, Y.; Tsukazaki, A.; Takahashi, K. S.; Kawasaki, M.; Tokura, Y.

    2015-11-02

    Quantum anomalous Hall effect (QAHE), which generates dissipation-less edge current without external magnetic field, is observed in magnetic-ion doped topological insulators (TIs) such as Cr- and V-doped (Bi,Sb){sub 2}Te{sub 3}. The QAHE emerges when the Fermi level is inside the magnetically induced gap around the original Dirac point of the TI surface state. Although the size of gap is reported to be about 50 meV, the observable temperature of QAHE has been limited below 300 mK. We attempt magnetic-Cr modulation doping into topological insulator (Bi,Sb){sub 2}Te{sub 3} films to increase the observable temperature of QAHE. By introducing the rich-Cr-doped thin (1 nm) layers at the vicinity of both the surfaces based on non-Cr-doped (Bi,Sb){sub 2}Te{sub 3} films, we have succeeded in observing the QAHE up to 2 K. The improvement in the observable temperature achieved by this modulation-doping appears to be originating from the suppression of the disorder in the surface state interacting with the rich magnetic moments. Such a superlattice designing of the stabilized QAHE may pave a way to dissipation-less electronics based on the higher-temperature and zero magnetic-field quantum conduction.

  19. Detection of EPO doping and blood doping: the haematological module of the Athlete Biological Passport.

    PubMed

    Schumacher, Yorck Olaf; Saugy, Martial; Pottgiesser, Torben; Robinson, Neil

    2012-11-01

    The increase of the body's capacity to transport oxygen is a prime target for doping athletes in all endurance sports. For this pupose, blood transfusions or erythropoiesis stimulating agents (ESA), such as erythropoietin, NESP, and CERA are used. As direct detection of such manipulations is difficult, biomarkers that are connected to the haematopoietic system (haemoglobin concentration, reticulocytes) are monitored over time (Athlete Biological Passport (ABP)) and analyzed using mathematical models to identify patterns suspicious of doping. With this information, athletes can either be sanctioned directly based on their profile or targeted with conventional doping tests. Key issues for the appropriate use of the ABP are correct targeting and use of all available information (e.g. whereabouts, cross sectional population data) in a forensic manner. Future developments of the passport include the correction of all concentration-based variables for shifts in plasma volume, which might considerably increase sensitivity. New passport markers from the genomic, proteomic, and metabolomic level might add further information, but need to be validated before integration into the passport procedure. A first assessment of blood data of federations that have implemented the passport show encouraging signs of a decreased blood-doping prevalence in their athletes, which adds scientific credibility to this innovative concept in the fight against ESA- and blood doping. Copyright © 2012 John Wiley & Sons, Ltd.

  20. Enhanced Ferromagnetic Interaction in Modulation-Doped GaMnN Nanorods

    NASA Astrophysics Data System (ADS)

    Lin, Yuan-Ting; Wadekar, Paritosh Vilas; Kao, Hsiang-Shun; Zheng, Yu-Jung; Chen, Quark Yung-Sung; Huang, Hui-Chun; Cheng, Cheng-Maw; Ho, New-Jin; Tu, Li-Wei

    2017-04-01

    In this report, ferromagnetic interactions in modulation-doped GaMnN nanorods grown on Si (111) substrate by plasma-assisted molecular beam epitaxy are investigated with the prospect of achieving a room temperature ferromagnetic semiconductor. Our results indicate the thickness of GaN layer in each GaN/MnN pair, as well as Mn-doping levels, are essential for suppressing secondary phases as well as enhancing the magnetic moment. For these optimized samples, structural analysis by high-resolution X-ray diffractometry and Raman spectroscopy verifies single-crystalline modulation-doped GaMnN nanorods with Ga sites substituted by Mn atoms. Energy dispersive X-ray spectrometry shows that the average Mn concentration can be raised from 0.4 to 1.8% by increasing Mn fluxes without formation of secondary phases resulted in a notable enhancement of the saturation magnetization as well as coercive force in these nanorods.

  1. Lateral topological crystalline insulator heterostructure

    NASA Astrophysics Data System (ADS)

    Sun, Qilong; Dai, Ying; Niu, Chengwang; Ma, Yandong; Wei, Wei; Yu, Lin; Huang, Baibiao

    2017-06-01

    The emergence of lateral heterostructures fabricated by two-dimensional building blocks brings many exciting realms in material science and device physics. Enriching available nanomaterials for creating such heterostructures and enabling the underlying new physics is highly coveted for the integration of next-generation devices. Here, we report a breakthrough in lateral heterostructure based on the monolayer square transition-metal dichalcogenides MX2 (M  =  W, X  =  S/Se) modules. Our results reveal that the MX2 lateral heterostructure (1S-MX2 LHS) can possess excellent thermal and dynamical stability. Remarkably, the highly desired two-dimensional topological crystalline insulator phase is confirmed by the calculated mirror Chern number {{n}\\text{M}}=-1 . A nontrivial band gap of 65 meV is obtained with SOC, indicating the potential for room-temperature observation and applications. The topologically protected edge states emerge at the edges of two different nanoribbons between the bulk band gap, which is consistent with the mirror Chern number. In addition, a strain-induced topological phase transition in 1S-MX2 LHS is also revealed, endowing the potential utilities in electronics and spintronics. Our predictions not only introduce new member and vitality into the studies of lateral heterostructures, but also highlight the promise of lateral heterostructure as appealing topological crystalline insulator platforms with excellent stability for future devices.

  2. All-optical, thermo-optical path length modulation based on the vanadium-doped fibers.

    PubMed

    Matjasec, Ziga; Campelj, Stanislav; Donlagic, Denis

    2013-05-20

    This paper presents an all-fiber, fully-optically controlled, optical-path length modulator based on highly absorbing optical fiber. The modulator utilizes a high-power 980 nm pump diode and a short section of vanadium-co-doped single mode fiber that is heated through absorption and a non-radiative relaxation process. The achievable path length modulation range primarily depends on the pump's power and the convective heat-transfer coefficient of the surrounding gas, while the time response primarily depends on the heated fiber's diameter. An absolute optical length change in excess of 500 µm and a time-constant as short as 11 ms, were demonstrated experimentally. The all-fiber design allows for an electrically-passive and remote operation of the modulator. The presented modulator could find use within various fiber-optics systems that require optical (remote) path length control or modulation.

  3. Dynamics of an erbium-doped fiber laser with pump modulation: theory and experiment

    NASA Astrophysics Data System (ADS)

    Pisarchik, Alexander N.; Kir'yanov, Alexander V.; Barmenkov, Yuri O.; Jaimes-Reátegui, Rider

    2005-10-01

    We study in detail the complex dynamics of an erbium-doped fiber laser that has been subjected to harmonic modulation of a diode pump laser. We introduce a novel laser model that describes perfectly all experimentally observed features. The model is generalized to a nonlinear oscillator. The coexistence of different periodic and chaotic regimes and their relation to subharmonics and higher harmonics of the relaxation oscillation frequency of the laser are demonstrated with codimensional-one and codimensional-two bifurcation diagrams in parameter space of the modulation frequency and amplitude. The phase difference between the laser response and the pump modulation is also investigated.

  4. Effect of Graded Base p-Doping on MIM Performance

    NASA Astrophysics Data System (ADS)

    Wernsman, B.; Wehrer, R. J.; Wilt, D. M.; Smith, R. W.; Siergiej, R. R.; Schmuck, G. P.; Ju, I.; Geller, C. B.

    2003-01-01

    0.6 eV InGaAs/InPAs double heterostructure n/p/n tunnel junction monolithic interconnected modules (TJ-MIMs) having p-type bases doped uniformly at 2×1017 cm-3 and inhomogeneously graded from 4×1016 cm-3 to 4×1017 cm-3 (10:1 doping ratio) were grown, processed, and characterized. The electrical performance of the devices with inhomogeneously graded bases was higher than that of the uniformly doped case due to the built-in electric field in the base region, making QEint and JSC larger. The free carrier absorption increased due to the relatively higher doping levels for the linearly doped case but remained unchanged for the exponential profile. Therefore, results showed that exponentially grading the base p-type doping increased the MIM performance by ˜ 8% (relative).

  5. Refractive index modulation in polymer film doped with diazo Meldrum's acid

    NASA Astrophysics Data System (ADS)

    Zanutta, Alessio; Villa, Filippo; Bertarelli, Chiara; Bianco, Andrea

    2016-08-01

    Diazo Meldrum's acid undergoes a photoreaction induced by UV light and it is used as photosensitizer in photoresists. Upon photoreaction, a change in refractive index occurs, which makes this system interesting for volume holography. We report on the sublimation effect at room temperature and the effect of photoirradiation on the refractive index in thin films of CAB (Cellulose acetate butyrate) doped with different amount of diazo Meldrum's acid. A net modulation of the refractive index of 0.01 is achieved with 40% of doping ratio together with a reduction of the film thickness.

  6. High Energy Neutron Irradiation Effects in GaAs Modulation-Doped Field Effect Transistors (MODFETS): Threshold Voltage

    DTIC Science & Technology

    1989-06-15

    PREFACE We would like to thank B. K. Janousek, W. E. Yamada, and L. W. Aukerman for their technical assistance in this study. Aceession For [iTIS CRA...Doped GaAs-(AlGa)As Heterostructures," Surface Science, 132, 519-526, (1983). 8. L. W. Aukerman , "Radiation-Produced Energy Levels in Compound Semi...conductors," J. Appl. Phys. LO, 1239-1243, (Aug. 1959). 9. L. W. Aukerman , "Radiation Effects," in Semiconductors and Semimetals: Physics of III-V

  7. Resonant tunneling modulation in quasi-2D Cu2O/SnO2 p-n horizontal-multi-layer heterostructure for room temperature H2S sensor application

    PubMed Central

    Cui, Guangliang; Zhang, Mingzhe; Zou, Guangtian

    2013-01-01

    Heterostructure material that acts as resonant tunneling system is a major scientific challenge in applied physics. Herein, we report a resonant tunneling system, quasi-2D Cu2O/SnO2 p-n heterostructure multi-layer film, prepared by electrochemical deposition in a quasi-2D ultra-thin liquid layer. By applying a special half-sine deposition potential across the electrodes, Cu2O and SnO2 selectively and periodically deposited according to their reduction potentials. The as-prepared heterostructure film displays excellent sensitivity to H2S at room temperature due to the resonant tunneling modulation. Furthermore, it is found that the laser illumination could enhance the gas response, and the mechanism with laser illumination is discussed. It is the first report on gas sensing application of resonant tunneling modulation. Hence, heterostructure material act as resonant tunneling system is believed to be an ideal candidate for further improvement of room temperature gas sensing. PMID:23409241

  8. Dynamical features of loss and pump modulation in an erbium-doped fibre ring laser

    NASA Astrophysics Data System (ADS)

    Kumar, Gyanendra; Vijaya, R.

    2015-12-01

    Resonance characteristics, chaotic dynamics and bistable response of the erbium-doped fibre ring laser (EDFRL) are studied in an experiment under cavity-loss modulation at frequencies in the range of 1-35 kHz. With an increase in pumping ratio and modulation index, the resonance frequencies of the ring cavity laser change in agreement with the expectations from the model. A comparison with the calculated results of the pump-modulated laser helps to bring out the differences in the two modulation schemes. The loss-modulated laser is found to be more sensitive in the sub-harmonic range to its dynamical state while the pump-modulated laser is more sensitive in the super-harmonic range. To achieve chaos, pump modulation requires high values of modulation index (˜28%) while it is seen even at very low values (<1%) in loss modulation. Even though both the schemes follow the same period-doubling route to chaos, features such as the presence of bifurcations or chaos at the resonance frequencies are quite different. Loss modulation is more suited to study the chaotic features in EDFRL due to the range of available control parameters. By comparing the strange attractors and Lyapunov exponents of both cases, it is found that the quality of chaos is better in loss modulation.

  9. Proximity Effects of Beryllium-Doped GaN Buffer Layers on the Electronic Properties of Epitaxial AlGaN/GaN Heterostructures

    DTIC Science & Technology

    2010-05-17

    rf - plasma assisted MBE - grown homoepitaxial GaN has shown that oxygen, a shallow donor in GaN , is present at...properties of Al- GaN / GaN HEMTs grown by rf - MBE on native GaN substrates . 2. Experimental Seven AlGaN/ GaN heterostructures were grown by rf - plasma assisted... GaN /Be:GaN heterostructures have been grown by rf - plasma molecular beam epitaxy on free- standing semi-insulating

  10. Efficient and Hysteresis-Free Field Effect Modulation of Ambipolarly Doped Vanadium Dioxide Nanowires

    NASA Astrophysics Data System (ADS)

    Peng, Xingyue; Yang, Yiming; Hou, Yasen; Travaglini, Henry C.; Hellwig, Luke; Hihath, Sahar; van Benthem, Klaus; Lee, Kathleen; Liu, Weifeng; Yu, Dong

    2016-05-01

    The subpicosecond metal-insulator phase transition in vanadium dioxide (VO2 ) has attracted extensive attention with potential applications in ultrafast Mott transistors, which are based on electric-field-induced phase transition. However, the development of VO2 -based transistors lags behind, owing to inefficient and hysteretic gate modulation. Here we report ambipolar doping and strong field effects free of hysteresis in single-crystal VO2 nanowires synthesized via catalyst-free chemical vapor deposition. The ambipolarly doped VO2 nanowires are achieved by controlling the oxygen vacancy density during the synthesis and show strong gate effects because of their relatively low doping level. Both the doping type of the nanowires and the band-bending direction at the metal-insulator domain walls are reversibly switched by electrochemical gating, as revealed by scanning photocurrent microscopy. Furthermore, we eliminate the hysteresis in gate sweep via a hybrid gating method, which combines the merits of liquid-ionic and solid gating. The capability of efficient field effect modulation of ambipolar conduction and band alignment offers opportunities on understanding the phase transition mechanism and enables electronic applications based on VO2 .

  11. Modulation-Doped In2 O3 /ZnO Heterojunction Transistors Processed from Solution.

    PubMed

    Khim, Dongyoon; Lin, Yen-Hung; Nam, Sungho; Faber, Hendrik; Tetzner, Kornelius; Li, Ruipeng; Zhang, Qiang; Li, Jun; Zhang, Xixiang; Anthopoulos, Thomas D

    2017-03-15

    This paper reports the controlled growth of atomically sharp In2 O3 /ZnO and In2 O3 /Li-doped ZnO (In2 O3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2 O3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2 O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2 O3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2 O3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.

  12. Impact of the modulation doping layer on the ν = 5/2 anisotropy

    DOE PAGES

    Shi, X.; Pan, W.; Baldwin, K. W.; ...

    2015-03-30

    We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ν = 5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We have observed that in the sample of the smallest d, electronic transport is anisotropic when the in-plane magnetic field (Bip) is parallel to the [1–10] crystallographic direction, but remains more or less isotropic when Bip // [110]. In contrast, in the sample of largest d,more » electronic transport is anisotropic in both crystallographic directions. Lastly, our results clearly show that the modulation doping layer plays an important role in the tilted field induced ν = 5/2 anisotropy.« less

  13. Coulomb-interaction induced coupling of Landau levels in intrinsic and modulation-doped quantum wells

    NASA Astrophysics Data System (ADS)

    Paul, J.; Stevens, C. E.; Zhang, H.; Dey, P.; McGinty, D.; McGill, S. A.; Smith, R. P.; Reno, J. L.; Turkowski, V.; Perakis, I. E.; Hilton, D. J.; Karaiskaj, D.

    2017-06-01

    We have performed two-dimensional Fourier transform spectroscopy on intrinsic and modulation doped quantum wells in external magnetic fields up to 10 T. In the undoped sample, the strong Coulomb interactions and the increasing separations of the electron and hole charge distributions with increasing magnetic fields lead to a nontrivial in-plane dispersion of the magneto-excitons. Thus, the discrete and degenerate Landau levels are coupled to a continuum. The signature of this continuum is the emergence of elongated spectral line shapes at the Landau level energies, which are exposed by the multidimensional nature of our technique. Surprisingly, the elongation of the peaks is completely absent in the lowest Landau level spectra obtained from the modulation doped quantum well at high fields.

  14. Impact of the modulation doping layer on the ν = 5/2 anisotropy

    SciTech Connect

    Shi, X.; Pan, W.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.

    2015-03-30

    We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ν = 5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We have observed that in the sample of the smallest d, electronic transport is anisotropic when the in-plane magnetic field (Bip) is parallel to the [1–10] crystallographic direction, but remains more or less isotropic when Bip // [110]. In contrast, in the sample of largest d, electronic transport is anisotropic in both crystallographic directions. Lastly, our results clearly show that the modulation doping layer plays an important role in the tilted field induced ν = 5/2 anisotropy.

  15. Heterostructure design optimization for laser cooling of GaAs

    NASA Astrophysics Data System (ADS)

    Imangholi, B.; Wang, C.; Soto, E.; Sheik-Bahae, M.; Stintz, A.; Malloy, K.; Nuntawong, N.; Epstein, R.

    2007-02-01

    Doping of the clad layers in thin GaAs/GaInP heterostructures, displaces the band energy discontinuity, modifies the carrier concentration in the active GaAs region and changes the quality of the hetero-interfaces. As a result, internal and consequently external quantum efficiencies in the double heterostructure are affected. In this paper, the interfacial quality of GaAs/GaInP heterostructure is systematically investigated by adjusting the doping level and type (n or p) of the cladding layer. An optimum structure for laser cooling applications is proposed.

  16. High drain current density and reduced gate leakage current in channel-doped AlGaN /GaN heterostructure field-effect transistors with Al2O3/Si3N4 gate insulator

    NASA Astrophysics Data System (ADS)

    Maeda, Narihiko; Wang, Chengxin; Enoki, Takatomo; Makimoto, Toshiki; Tawara, Takehiko

    2005-08-01

    Channel-doped AlGaN /GaN heterostructure field-effect transistors (HFETs) with metal-insulator-semiconductor (MIS) structures have been fabricated to obtain the high drain current density and reduced gate leakage current. A thin bilayer dielectric of Al2O3(4nm)/Si3N4(1nm) was used as the gate insulator, to simultaneously take advantage of the high-quality interface between Si3N4 and AlGaN, and high resistivity and a high dielectric constant of Al2O3. A MIS HFET with a gate length of 1.5μm has exhibited a record high drain current density of 1.87A/mm at a gate voltage (Vg) of +3V, which is ascribed to a high applicable Vg and a very high two-dimensional electron gas (2DEG) density of 2.6×1013cm-2 in the doped channel. The gate leakage current was reduced by two or three orders of magnitude, compared with that in normal HFETs without a gate insulator. The transconductance (gm) was 168mS/mm, which is high in the category of the MIS structure. Channel-doped MIS HFETs fabricated have thus been proved to exhibit the high current density, reduced gate leakage current, and relatively high transconductance, hence, promising for high-power applications.

  17. Electric-field modulation of photoinduced effect in phase-separated Pr0.65 (Ca0.75Sr0.25)0.35MnO3/PMN-PT heterostructure

    NASA Astrophysics Data System (ADS)

    Li, W.; Dong, X. L.; Wang, S. H.; Jin, K. X.

    2016-08-01

    In this letter, we report the photoinduced effect modulated by different electric fields in the Pr0.65 (Ca0.75Sr0.25)0.35MnO3/0.7PbMg1/3Nb2/3O3-0.3PbTiO3 heterostructure. The film exhibits a decrease in the resistance up to five orders of magnitude by enhancing applied electric fields, combined with an electric-field-induced insulator-to-metal transition. More interestingly, a reversible bistability arises in the photoinduced change in resistance at T < 80 K as the voltages are increased. The results can be attributed to the phase separation in manganites, which provides a prototype of photoelectric conversion for electric-field modulation of all-oxide heterostructures.

  18. Isoelectronic Tungsten Doping in Monolayer MoSe2 for Carrier Type Modulation.

    PubMed

    Li, Xufan; Lin, Ming-Wei; Basile, Leonardo; Hus, Saban M; Puretzky, Alexander A; Lee, Jaekwang; Kuo, Yen-Chien; Chang, Lo-Yueh; Wang, Kai; Idrobo, Juan C; Li, An-Ping; Chen, Chia-Hao; Rouleau, Christopher M; Geohegan, David B; Xiao, Kai

    2016-10-01

    Carrier-type modulation is demonstrated in 2D transition metal dichalcogenides as n-type monolayer MoSe2 is converted to nondegenerate p-type monolayer Mo1-x Wx Se2 through isoelectronic doping. Although the alloys are mesoscopically uniform, the p-type conduction in monolayer Mo1-x Wx Se2 appears to originate from the upshift of the valenceband maximum toward the Fermi level at highly localized "W-rich" regions in the lattice.

  19. Experimental Performance of a Single-Mode Ytterbium-doped Fiber Ring Laser with Intracavity Modulator

    NASA Technical Reports Server (NTRS)

    Numata, Kenji; Camp, Jordan

    2012-01-01

    We have developed a linearly polarized Ytterbium-doped fiber ring laser with a single longitudinal mode output at 1064 run. A fiber-coupled intracavity phase modulator ensured mode-hop free operation and allowed fast frequency tuning. The fiber laser was locked with high stability to an iodine-stabilized laser, showing a frequency noise suppression of a factor approx 10 (exp 5) at 1 mHz

  20. Self-Assembly-Induced Alternately Stacked Single-Layer MoS2 and N-doped Graphene: A Novel van der Waals Heterostructure for Lithium-Ion Batteries.

    PubMed

    Zhao, Chenyang; Wang, Xu; Kong, Junhua; Ang, Jia Ming; Lee, Pooi See; Liu, Zhaolin; Lu, Xuehong

    2016-01-27

    In this article, a simple self-assembly strategy for fabricating van der Waals heterostructures from isolated two-dimensional atomic crystals is presented. Specifically, dopamine (DOPA), an excellent self-assembly agent and carbon precursor, was adsorbed on exfoliated MoS2 monolayers through electrostatic interaction, and the surface-modified monolayers self-assembled spontaneously into DOPA-intercalated MoS2. The subsequent in situ conversion of DOPA to highly conductive nitrogen-doped graphene (NDG) in the interlayer space of MoS2 led to the formation of a novel NDG/MoS2 nanocomposite with well-defined alternating structure. The NDG/MoS2 was then studied as an anode for lithium-ion batteries (LIBs). The results show that alternating arrangement of NDG and MoS2 triggers synergistic effect between the two components. The kinetics and cycle life of the anode are greatly improved due to the enhanced electron and Li(+) transport as well as the effective immobilization of soluble polysulfide by NDG. A reversible capacity of more than 460 mAh/g could be delivered even at 5 A/g. Moreover, the abundant voids created at the MoS2-NDG interface also accommodate the volume change during cycling and provide additional active sites for Li(+) storage. These endow the NDG/MoS2 heterostructure with low charge-transfer resistance, high sulfur reservation, and structural robustness, rendering it an advanced anode material for LIBs.

  1. The design of Cu-doped ZnO thermoelectric module (simulation study)

    NASA Astrophysics Data System (ADS)

    Hadi, Syamsul; Suratwan, Agus; Kurniawan, Agus; Budiana, Eko Prasetya; Suyitno

    2016-03-01

    The p-type semiconductor of Cu-doped ZnO-based thermoelectric material has already been synthesized and studied as an energy harvester. The next challenge is manufacturing the thermoelectric module in the development of thermoelectric as an eco-friendly material in the future. This research aims to investigate the effect of thermoelectric geometric design on the electrical output power and voltage and to recommend the most appropriate thermoelectric geometric design. The design of thermoelectric generator (TEG) includes the determinations of dimension (width, length, and height), number of modules, and semiconductor materials. The simulation used the coupled-field analysis of ANSYS APDL 14.5 in the steady state condition. The p- and n- type thermoelectric material used Cu-doped ZnO and Al-doped ZnO, respectively. The width of element and the number of thermoelectric module were varied to obtain a thermoelectric design, which produces the largest current, power, and voltage. The result of research shows that the t hermoelectric generator with the element widths of 0.94 mm, 1.125 mm, 1.05 mm, and 1.2 mm generates the largest power output and voltage, namely: 0.32 W and 0.89 V, 0.38 W and 0.98 V, 0.45 W and 1.06 V, and 0.52 W and 1.13 V, respectively.

  2. Design rules for modulation-doped AlAs quantum wells

    NASA Astrophysics Data System (ADS)

    Chung, Yoon Jang; Baldwin, K. W.; West, K. W.; Kamburov, D.; Shayegan, M.; Pfeiffer, L. N.

    2017-07-01

    Owing to their multivalley, anisotropic, energy band structure, two-dimensional electron systems (2DESs) in modulation-doped AlAs quantum wells (QWs) provide a unique platform to investigate electron interaction physics and ballistic transport. Indeed, a plethora of phenomena unseen in other 2DESs have been observed over the past decade. However, a foundation for sample design is still lacking for AlAs 2DESs, limiting the means to achieve optimal quality samples. Here, we present a systematic study on the fabrication of modulation-doped AlAs and GaAs QWs over a wide range of AlxGa1 -xAs barrier alloy compositions. Our data indicate clear similarities in modulation doping mechanisms for AlAs and GaAs, and provide guidelines for the fabrication of very high quality AlAs 2DESs. We highlight the unprecedented quality of the fabricated AlAs samples by presenting the magnetotransport data for low-density (≃1 ×1011cm-2 ) AlAs 2DESs that exhibit high-order fractional quantum Hall signatures.

  3. Nb and Ta layer doping effects on the interfacial energetics and electronic properties of LaAlO3/SrTiO3 heterostructure: first-principles analysis.

    PubMed

    Nazir, Safdar; Behtash, Maziar; Cheng, Jianli; Luo, Jian; Yang, Kesong

    2016-01-28

    The two-dimensional electron gas (2DEG) formed at the n-type (LaO)(+1)/(TiO2)(0) interface in the polar/nonpolar LaAlO3/SrTiO3 (LAO/STO) heterostructure (HS) has emerged as a prominent research area because of its great potential for nanoelectronic applications. Due to its practical implementation in devices, desired physical properties such as high charge carrier density and mobility are vital. In this respect, 4d and 5d transition metal doping near the interfacial region is expected to tailor electronic properties of the LAO/STO HS system effectively. Herein, we studied Nb and Ta-doping effects on the energetics, electronic structure, interfacial charge carrier density, magnetic moment, and the charge confinements of the 2DEG at the n-type (LaO)(+1)/(TiO2)(0) interface of LAO/STO HS using first-principles density functional theory calculations. We found that the substitutional doping of Nb(Ta) at Ti [Nb(Ta)@Ti] and Al [Nb(Ta)@Al] sites is energetically more favorable than that at La [Nb(Ta)@La] and Sr [Nb(Ta)@Sr] sites, and under appropriate thermodynamic conditions, the changes in the interfacial energy of HS systems upon Nb(Ta)@Ti and Nb(Ta)@Al doping are negative, implying that the formation of these structures is energetically favored. Our calculations also showed that Nb(Ta)@Ti and Nb(Ta)@Al doping significantly improve the interfacial charge carrier density with respect to that of the undoped system, which is because the Nb(Ta) dopant introduces excess free electrons into the system, and these free electrons reside mainly on the Nb(Ta) ions and interfacial Ti ions. Hence, along with the Ti 3d orbitals, the Nb 4d and Ta 5d orbitals also contribute to the interfacial metallic states; accordingly, the magnetic moments on the interfacial Ti ions increase significantly. As expected, the Nb@Al and Ta@Al doped LAO/STO HS systems show higher interfacial charge carrier density than the undoped and other doped systems. In contrast, Nb@Ti and Ta@Ti doped systems may

  4. Axial Ge/Si nanowire heterostructure tunnel FETs.

    SciTech Connect

    Dayeh, Shadi A.; Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas

    2010-03-01

    Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx

  5. Tunable Schottky contacts in the antimonene/graphene van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Li, Wei; Wang, Xinlian; Dai, Xianqi

    2017-03-01

    Electronic structures modulation in the antimonene/graphene van der Waals(vdW) heterostructure with an external electric field(Eext) are investigated by density functional theory calculations. It is demonstrated that weak vdW interactions dominate between antimonene and graphene with their intrinsic electronic properties preserved. Furthermore, the vertical Eext can control not only the Schottky barrier but also the Schottky contacts (n-type and p-type) and Ohmic contacts (n-type) at the antimonene/graphene interface. Meanwhile, the negative Eext can shifts the Dirac point of graphene above the Fermi level, resulting in p-type doping in graphene because electrons can easily transfer from the Dirac point of graphene to the conduction band of antimonene. The present study would open a new avenue for application of ultrathin antimonene/graphene heterostructures in future nano- and optoelectronics.

  6. Semiconductor heterostructure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold John (Inventor); Woodall, Jerry MacPherson (Inventor)

    1978-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  7. Doping the Mind: Dopaminergic Modulation of Prefrontal Cortical Cognition.

    PubMed

    Ranganath, Ajit; Jacob, Simon N

    2016-12-01

    The prefrontal cortex is the center of cognitive control. Processing in prefrontal cortical circuits enables us to direct attention to behaviorally relevant events; to memorize, structure, and categorize information; and to learn new concepts. The prefrontal cortex receives strong projections from midbrain neurons that use dopamine as a transmitter. In this article, we review the crucial role dopamine plays as a modulator of prefrontal cognitive functions, in the primate brain in particular. Following a summary of the anatomy and physiology of the midbrain dopamine system, we focus on recent studies that investigated dopaminergic effects in prefrontal cortex at the cellular level. We then discuss how unregulated prefrontal dopamine signaling could contribute to major disorders of cognition. The studies highlighted in this review demonstrate the powerful influence dopamine exerts on the mind.

  8. Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus.

    PubMed

    Xiang, Du; Han, Cheng; Wu, Jing; Zhong, Shu; Liu, Yiyang; Lin, Jiadan; Zhang, Xue-Ao; Ping Hu, Wen; Özyilmaz, Barbaros; Neto, A H Castro; Wee, Andrew Thye Shen; Chen, Wei

    2015-03-12

    Black phosphorus, a fast emerging two-dimensional material, has been configured as field effect transistors, showing a hole-transport-dominated ambipolar characteristic. Here we report an effective modulation on ambipolar characteristics of few-layer black phosphorus transistors through in situ surface functionalization with caesium carbonate (Cs2CO3) and molybdenum trioxide (MoO3), respectively. Cs2CO3 is found to strongly electron dope black phosphorus. The electron mobility of black phosphorus is significantly enhanced to ~27 cm(2) V(-1) s(-1) after 10 nm Cs2CO3 modification, indicating a greatly improved electron-transport behaviour. In contrast, MoO3 decoration demonstrates a giant hole-doping effect. In situ photoelectron spectroscopy characterization reveals significant surface charge transfer occurring at the dopants/black phosphorus interfaces. Moreover, the surface-doped black phosphorus devices exhibit a largely enhanced photodetection behaviour. Our findings coupled with the tunable nature of the surface transfer doping scheme ensure black phosphorus as a promising candidate for further complementary logic electronics.

  9. Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus

    NASA Astrophysics Data System (ADS)

    Xiang, Du; Han, Cheng; Wu, Jing; Zhong, Shu; Liu, Yiyang; Lin, Jiadan; Zhang, Xue-Ao; Ping Hu, Wen; Özyilmaz, Barbaros; Neto, A. H. Castro; Wee, Andrew Thye Shen; Chen, Wei

    2015-03-01

    Black phosphorus, a fast emerging two-dimensional material, has been configured as field effect transistors, showing a hole-transport-dominated ambipolar characteristic. Here we report an effective modulation on ambipolar characteristics of few-layer black phosphorus transistors through in situ surface functionalization with caesium carbonate (Cs2CO3) and molybdenum trioxide (MoO3), respectively. Cs2CO3 is found to strongly electron dope black phosphorus. The electron mobility of black phosphorus is significantly enhanced to ~27 cm2 V-1 s-1 after 10 nm Cs2CO3 modification, indicating a greatly improved electron-transport behaviour. In contrast, MoO3 decoration demonstrates a giant hole-doping effect. In situ photoelectron spectroscopy characterization reveals significant surface charge transfer occurring at the dopants/black phosphorus interfaces. Moreover, the surface-doped black phosphorus devices exhibit a largely enhanced photodetection behaviour. Our findings coupled with the tunable nature of the surface transfer doping scheme ensure black phosphorus as a promising candidate for further complementary logic electronics.

  10. Cyclotron Resonance in a Two-Dimensional Electron Gas with Long-Range Randomness in Modulation-Doped GaAs/AlGaAs and Si/SiGe Single Quantum Wells

    NASA Astrophysics Data System (ADS)

    McCombe, B. D.; Yeo, T.; Comanescu, G.; Ashkinadze, B. M.; Tol, H. V.; Brunel, L. C.

    2001-03-01

    We have performed studies of cyclotron resonance (CR) on two high mobility, one-side modulation-doped GaAs/AlGaAs single quantum-well (SQW) samples and one one-side modulation-doped Si/SiGe heterostructure. Measurements were made at 4.2 K over a wide range of photon energies (141.8 cm-1 - 1.25 cm-1) by far-infrared laser and microwave techniques in conjunction with a superconducting magnet at 4.2 K. From linewidth analysis the behavior of the CR linewidth vs. (ωc τ)-1, where ωc is the cyclotron frequency and τ is the momentum relaxation time, is not well-explained by CR linewidth descriptions [1] which mainly deal with the effect of short-range random potential. A comparison of the experimental results with a recently suggested theoretical model of cyclotron resonance of two-dimensional electron gas with long-range randomness will be given [2]. supported by BSF96004092 and DMR 9727425. 1 T. Ando, J. Phys. Soc. Jpn. 38, 989 (1975). 2 M. M. Fogler, B. I. Shklovskii, Phys. Rev. Lett. 80, 4749 (1998).

  11. Electric-Field Modulation of Interface Magnetic Anisotropy and Spin Reorientation Transition in (Co/Pt)3/PMN-PT Heterostructure.

    PubMed

    Sun, Ying; Ba, You; Chen, Aitian; He, Wei; Wang, Wenbo; Zheng, Xiaoli; Zou, Lvkuan; Zhang, Yijun; Yang, Qu; Yan, Lingjia; Feng, Ce; Zhang, Qinghua; Cai, Jianwang; Wu, Weida; Liu, Ming; Gu, Lin; Cheng, Zhaohua; Nan, Ce-Wen; Qiu, Ziqiang; Wu, Yizheng; Li, Jia; Zhao, Yonggang

    2017-03-29

    We report electric-field control of magnetism of (Co/Pt)3 multilayers involving perpendicular magnetic anisotropy with different Co-layer thicknesses grown on Pb(Mg,Nb)O3-PbTiO3 (PMN-PT) FE substrates. For the first time, electric-field control of the interface magnetic anisotropy, which results in the spin reorientation transition, was demonstrated. The electric-field-induced changes of the bulk and interface magnetic anisotropies can be understood by considering the strain-induced change of magnetoelastic energy and weakening of Pt 5d-Co 3d hybridization, respectively. We also demonstrate the role of competition between the applied magnetic field and the electric field in determining the magnetization of the sample with the coexistence phase. Our results demonstrate electric-field control of magnetism by harnessing the strain-mediated coupling in multiferroic heterostructures with perpendicular magnetic anisotropy and are helpful for electric-field modulations of Dzyaloshinskii-Moriya interaction and Rashba effect at interfaces to engineer new functionalities.

  12. Extension of long wavelength response by modulation doping in extrinsic germanium infrared detectors

    NASA Technical Reports Server (NTRS)

    Hadek, V.; Farhoomand, J.; Beichman, C. A.; Watson, D. M.; Jack, M. D.

    1985-01-01

    A new concept for infrared detectors based on multilayer epitaxy and modulation doping has been investigated. This permits a high doping concentration and lower excitation energy in the photodetecting layer as is necessary for longer wavelength response, without incurring the detrimental effects of increased dark current and noise as would be the case with conventional detector designs. Germanium photodetectors using conventional materials and designs have a long wavelength cutoff in the infrared at 138 microns, which can only be extended through the inconvenient application of mechanical stress or magnetic fields. As a result of this approach which was arrived at from theoretical considerations and subsequently demonstrated experimentally, the long wavelength cutoff for germanium extrinsic detectors was extended beyond 200 microns, as determined by direct infrared optical measurements.

  13. DX centers in indium aluminum arsenide heterostructures

    NASA Astrophysics Data System (ADS)

    Sari, Huseyin

    DX centers are point defects observed in many n-type doped III-V compound semi conductors. They have unique properties, which include large differences between their optical and thermal ionization energies, and a temperature dependence of the capture cross-sections. As a result of these properties DX centers exhibit a reduction in free carrier concentration and a large persistent photoconductivity (PPC) effect. DX centers also lead to a shift in the threshold voltage of modulation doped field effect transistors (MODFET) structures, at low temperatures. Most of the studies on this defect have been carried out on the Ga xAl1-xAs material system. However, to date there is significantly less work on DX centers in InxAl1-xAs compounds. This is partly due to difficulties associated with the growth of defect free materials other than lattice matched In0.52Al 0.48As on InP and partly because the energy level of the DX center is in resonance with the conduction band in In0.52Al0.48As. The purpose of this dissertation is to extend the DX center investigation to InAlAs compounds, primarily in the indirect portion of the InAlAs bandgap. In this work the indium composition dependence of the DX centers in In xAl1-xAs/InyGa1-yAs-based heterostructure is studied experimentally. Different InxAl 1-xAs epitaxial layers with x = 0.10, x = 0.15, x = 0.20, and x = 0.34 in a MODFET-like heterostructure were grown by Molecular Beam Epitaxy (MBE) on (001) GaAs substrates. In order to compensate the lattice mismatch between epitaxial layers and their substrates, step-graded buffer layers with indium composition increments of x = 0.10, every 2000 A, were used. For the samples grown with different indium contents Hall measurements as a function of both temperature and different cooling biases were performed in order to determine their carrier concentrations. A self consistent Poisson-Schrodinger numerical software is used to model the heterostructures. With the help of this numerical model

  14. Ultrafast terahertz modulation characteristic of tungsten doped vanadium dioxide nanogranular film revealed by time-resolved terahertz spectroscopy

    SciTech Connect

    Xiao, Yang; Zhai, Zhao-Hui; Zhu, Li-Guo E-mail: huangwanxia@scu.edu.cn; Li, Jun; Peng, Qi-Xian; Li, Ze-Ren; Shi, Qi-Wu; Huang, Wan-Xia E-mail: huangwanxia@scu.edu.cn; Yue, Fang; Hu, Yan-Yan

    2015-07-20

    The ultrafast terahertz (THz) modulation characteristic during photo-induced insulator-to-metal transition (IMT) of undoped and tungsten (W)-doped VO{sub 2} film was investigated at picoseconds time scale using time-resolved THz spectroscopy. W-doping slows down the photo-induced IMT dynamic processes (both the fast non-thermal process and the slow metallic phase propagation process) in VO{sub 2} film and also reduces the pump fluence threshold of photo-induced IMT in VO{sub 2} film. Along with the observed broadening of phase transition temperature window of IMT in W-doped VO{sub 2}, we conclude that W-doping prevents metallic phase domains from percolation. By further extracting carrier properties from photo-induced THz conductivity at several phase transition times, we found that the electron-electron correlation during IMT is enhanced in W-doped VO{sub 2}.

  15. Modulation of hydride formation energies in transition metal doped Mg by alteration of spin state

    NASA Astrophysics Data System (ADS)

    Ozkanlar, Abdullah; Samuels, Alex; Clark, Aurora E.

    2013-02-01

    Coupled cluster and density functional theory calculations have been used to assess the role of the transition metal spin state upon the energetic favorability of hydride formation within small, transition metal doped, magnesium clusters. The spin state is found to modulate the occupation of bonding and anti-bonding orbitals, thus having a large effect upon both geometric and energetic parameters. This chemical description provides a potential theoretical basis for unexplained experimental observations, and indicates a mechanism for using an external magnetic field to control the thermodynamics of H2 sorption and desorption in metal hydrides.

  16. Laser direct writing of modulation-doped nanowire p/n junctions.

    PubMed

    Nam, Woongsik; Mitchell, James I; Xu, Xianfan

    2016-12-02

    We demonstrate a single-step, laser-based technique to fabricate axial modulation-doped silicon nanowires. Our method is based on laser-direct-write chemical vapor deposition and has the capability to fabricate nanowires as small as 60 nm, which is far below the diffraction limit of the laser wavelength of 395 nm, with precise control of nanowire position, length, and orientation. By switching dopant gases during nanowire writing, p-n junction nanowires are produced. The p-n junction nanowires are fabricated into multifinger devices with parallel metal contacts and electrically tested to demonstrate diode characteristics.

  17. Synthesis of multiple constituent ferecrystal heterostructures

    NASA Astrophysics Data System (ADS)

    Westover, Richard D.

    The ability to form multiple component heterostructures of two-dimensional materials promises to provide access to hybrid materials with tunable properties different from those of the bulk materials or two-dimensional constituents. By taking advantage of the unique properties of different constituents, numerous applications are possible for which none of the individual components are viable. The synthesis of multiple component heterostructures, however, is nontrivial, relying on either the cleaving and stacking of bulk materials in a "scotch tape" type technique or finding coincidentally favorable growth conditions which allow layers to be grown epitaxially on each other in any order. In addition, alloying of miscible materials occurs when the modulation wavelength is small. These synthetic challenges have limited the ability of scientists to fully utilize the potential of multiple component heterostructures. An alternative synthetic route to multiple component heterostructures may be found through expansion of the modulated elemental reactant technique which allows access to metastable products, known as ferecrystals, which are otherwise inaccessible. This work focuses on the expansion of the modulated elemental reactants technique for the formation of ferecrystals containing multiple constituents. As a starting point, the synthesis of the first alloy ferecrystals (SnSe) 1.16-1.09([NbxMo1-x]Se2) will be discussed. The structural and electrical characterization of these compounds will then be used to determine the intermixing of the first three component ferecrystal heterojunction ([SnSe]1+delta)([{MoxNb1-x}Se 2]1+gamma)([SnSe]1+delta)({NbyMo 1-y}Se2). Then, by synthesizing ([SnSe]1+delta) m([{MoxNb1-x}Se2]1+gamma )1([SnSe]1+delta)m({Nb xMo1-x}Se2)1 (m = 0 - 4) compounds with increasing thicknesses of SnSe, the interdiffusion of miscible constituents in ferecrystals will be studied. In addition, by comparison of the ([SnSe] 1+delta)m ([{MoxNb1-x }Se2]1+gamma)1([Sn

  18. Effect of doping and chemical ordering on the optoelectronic properties of complex oxides: Fe 2 O 3 –V 2 O 3 solid solutions and hetero-structures

    SciTech Connect

    Nayyar, Iffat H.; Chamberlin, Sara E.; Kaspar, Tiffany C.; Govind, Niranjan; Chambers, Scott A.; Sushko, Peter V.

    2017-01-01

    The electronic and optical properties of a-(Fe1xVx)2O3 at low (x = 0.04) and high (x = 0.5) doping levels are investigated using a combination of periodic and embedded cluster approaches, and time dependent density functional theory. At low V concentrations the onset of the optical absorption is B0.5 eV (i.e., nearly 1.6 eV lower than that in pure a-Fe2O3) and corresponds to the electron transitions from V 3d to Fe 3d* orbitals. At high V concentrations, optical absorption energies and intensities are sensitive to specific arrangements of Fe and V atoms and their spin configuration that determine Fe–V hybridization. The onset of the lowest inter-vanadium absorption band in the case of Fe2O3/V2O3 hetero-structures is as low as B0.3 eV and the corresponding peak is at B0.7 eV. In contrast, in the case of solid solutions this peak has lower intensity and is shifted to higher energy (B1.2 eV). Analysis of the orbital character of electronic excitation suggests that Fe2O3/V2O3 hetero-structures absorb light much more effectively than random alloys, thus promoting efficient photo-induced carrier generation. These predictions can be tested in a-(Fe1xVx)2O3 thin films synthesized with well-controlled spatial distribution of Fe and V species.

  19. The effects of doping and shell thickness on the optical and magnetic properties of Mn/Cu/Fe-doped and Co-doped ZnS nanowires/ZnO quantum dots/SiO2 heterostructures

    NASA Astrophysics Data System (ADS)

    Cao, Jian; Yang, Jinghai; Yang, Lili; Wei, Maobin; Feng, Bo; Han, Donglai; Fan, Lin; Wang, Bingji; Fu, Hao

    2012-07-01

    In this paper, we demonstrated the encapsulation of Mn/Cu/Fe-doped and co-doped ZnS nanowires (NWs) and ZnO quantum dots (QDs) with a layer of mesoporous SiO2 shell for the purpose of integrating dual emission and ferromagnetism property into one common nanostructure at room temperature. Within the ZnS:Mn2+Cu2+Fe2+/ZnO@SiO2 nanocomposites, ZnS:Mn2+Cu2+Fe2+ NWs and ZnO QDs provided color-tunable visible emission and UV emission, respectively. The color-tunable visible emission in the ZnS:Mn2+Cu2+Fe2+ NWs can be obtained by adjusting the concentrations of Mn2+, Cu2+, and Fe2+ ions. The ferromagnetism of the ZnS:Mn2+Cu2+Fe2+ NWs was observed around room temperature, the mechanism of which was explained by the super-exchange mechanism. The results of the effect of the ZnO QDs shell thickness on the optical properties of the ZnS:Mn2+/ZnO@SiO2 nanocomposites showed that the luminescence intensity of the yellow-orange emission and UV emission reached the highest value when the ratio of ZnS:Mn2+/ZnO equaled 1:5.

  20. Growth and doping of AlGaN and electroluminescence of SAG-InGaN/AlGaN heterostructure by mixed-source HVPE

    NASA Astrophysics Data System (ADS)

    Kim, K. H.; Ahn, H. S.; Yang, M.; Jang, K. S.; Hwang, S. L.; Choi, W. J.; Cho, C. R.; Kim, S. W.; Honda, Y.; Yamaguchi, M.; Sawaki, N.; Yoo, J.; Lee, S. M.; Koike, M.

    2006-06-01

    The AlxGa1-xN layers on GaN/Al2O3 substrates are grown by mixed-source hydride vapor phase epitaxy (HVPE) at various temperatures of the source zone. We find source zone temperature dependence of the composition x of AlxGa1-xN layers. Te doping as a new attempt and Si doping in obtaining an n-type AlGaN layers are performed by putting small amount of Te (or Si) into the Ga-Al source, respectively. In case of Te-doped AlGaN (x = 0.16), the carrier concentration is varied from 1.1 x 1018 to 8.0 x 1018/cm3, while in case of Si-doped one, it is varied from 2.0 x 1016 to 1.1 x 1017/cm3. We find the new results that Te doping is more suitable to get a high n-type concentration by mixed-source HVPE. InGaN/GaN multiple quantum wells (MQWs) are grown on the selective area growth (SAG)-Te-doped AlGaN and SAG-Si-doped AlGaN cladding layer by mealorganic chemical vapour deposition (MOCVD), respectively. Furthermore, we investigate the electroluminescence (EL) properties of SAG-LEDs of two different cladding layers.

  1. Improved two-dimensional electron mobility in asymmetric barrier delta-doped GaAs/AlGaAs modulation-doped field-effect transistor structures

    NASA Astrophysics Data System (ADS)

    Das, Sudhakar; Mohapatra, Meryleen; Nayak, Rasmita K.; Panda, Ajit K.; Sahu, Trinath

    2017-03-01

    We study the enhancement of electron mobility μ in barrier delta-doped GaAs/AlGaAs quantum-well-based modulation-doped field-effect transistor (MODFET) structures. We asymmetrically vary the doping concentrations N d1 and N d2 in the barriers on the substrate and surface sides, respectively, to obtain a nonlinear enhancement of μ as a function of the well width w through multi-subband effects. We show that an increase in doping concentration increases the surface electron density N s, which in turn enhances μ. Interchanging N d1 and N d2 leads to no change in N s but rather, an enhancement of μ as a function of w for N d2 > N d1 owing to asymmetric variation of subband wave functions, thereby implying a higher channel conductivity in a surface-doped structure than in an inverted doped structure. By keeping (N d1 + N d2) unchanged, the conductivity of a single-channel MODFET, N d1 (N d2) ≠ 0 and N d2 (N d1) = 0, can be enhanced by considering a MODFET based on an asymmetrically doped (N d1 ≠ N d2 ≠ 0) quantum well structure. We show that the highest N s and μ product for these structures occurs almost before the onset of the occupation of the second subband. Our analysis of the effect of asymmetric doping profiles on channel conductivity can be utilized for the performance improvement of MODFET-like devices.

  2. Effect of Sr-doping of LaMnO3 spacer on modulation-doped two-dimensional electron gases at oxide interfaces

    NASA Astrophysics Data System (ADS)

    Chen, Y. Z.; Gan, Y. L.; Christensen, D. V.; Zhang, Y.; Pryds, N.

    2017-03-01

    Modulation-doped oxide two-dimensional electron gas formed at the LaMnO3 (LMO) buffered disorderd-LaAlO3/SrTiO3 (d-LAO/LMO/STO) heterointerface provides new opportunities for electronics as well as quantum physics. Herein, we studied the dependence of Sr-doping of La1-xSrxMnO3 (LSMO, x = 0, 1/8, 1/3, ½, and 1) spacer on the transport properties of d-LAO/LSMO/STO in order to determine the effects of the filling of Mn eg subbands as well as the LSMO polarity on the modulation-doping. Upon increasing the LSMO film thickness from 1 unit cell (uc) to 2 uc, a sharp metal to insulator transition of interface conduction was observed, independent of x. The resultant electron mobility is higher than 1900 cm2 V-1 s-1 at 2 K, which increases upon decreasing x. The sheet carrier density, on the other hand, is in the range of 6.9 × 1012˜1.8 × 1013 cm-2 (0.01 ˜ 0.03 e/uc) and is largely independent on x for all the metallic d-LAO/LSMO (1 uc)/STO interfaces. These results are consistent with the charge transfer induced modulation doping scheme and clarify that the polarity of the buffer layer plays a trivial role on the modulation doping. The negligible tunability of the carrier density could result from the reduction of LSMO during the deposition of disordered LAO or that the energy levels of Mn 3d electrons at the interface of LSMO/STO are hardly varied even when changing the LSMO composition from LMO to SrMnO3.

  3. Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping

    NASA Astrophysics Data System (ADS)

    Berger, Christoph; Lesnik, Andreas; Zettler, Thomas; Schmidt, Gordon; Veit, Peter; Dadgar, Armin; Bläsing, Jürgen; Christen, Jürgen; Strittmatter, André

    2016-04-01

    We report on metalorganic vapor phase epitaxy (MOVPE) of distributed Bragg reflectors (DBR) applying a periodic modulation of the GaN doping concentration only. The doping modulation changes the refractive index of GaN via the Burstein-Moss-effect. MOVPE growth of highly doped GaN:Ge and modulation of the dopant concentration by at least two orders of magnitude within few nanometers is required to achieve a refractive index contrast of 2-3%. Such modulation characteristic is achieved despite the presence of Ge memory effects and incorporation delay. We realized DBRs with up to 100 layer pairs by combining GaN:Ge with a nominal doping concentration of 1.6×1020 cm-3 as low-refractive index material with unintentionally doped GaN as high-refractive index layer. Scanning transmission electron microscope images reveal DBR structures with abrupt interfaces and homogenous layer thicknesses in lateral and vertical direction. Reflectance measurements of DBRs designed for the blue and near UV-spectral region show a narrow stopband with a maximum reflectivity of 85% at 418 nm and even 95% at 370 nm. InGaN/GaN multi-quantum well structures grown on top of such DBRs exhibit narrow emission spectra with linewidths below 3 nm and significantly increased emission intensity.

  4. Design of lateral heterostructure from arsenene and antimonene

    NASA Astrophysics Data System (ADS)

    Sun, Qilong; Dai, Ying; Ma, Yandong; Yin, Na; Wei, Wei; Yu, Lin; Huang, Baibiao

    2016-09-01

    Lateral heterostructures fabricated by two-dimensional building blocks have opened up exciting realms in material science and device physics. Identifying suitable materials for creating such heterostructures is urgently needed for the next-generation devices. Here, we demonstrate a novel type of seamless lateral heterostructures with excellent stabilities formed within pristine arsenene and antimonene. We find that these heterostructures could possess direct and reduced energy gaps without any modulations. Moreover, the highly coveted type-II alignment and the high carrier mobility are also identified, marking the enhanced quantum efficiency. The tensile strain can result in efficient bandgap engineering. Besides, the proposed critical condition for favored direct energy gaps would have a guiding significance on the subsequent works. Generally, our predictions not only introduce new vitality into lateral heterostructures, enriching available candidate materials in this field, but also highlight the potential of these lateral heterostructures as appealing materials for future devices.

  5. Characterization of Si (sub X)Ge (sub 1-x)/Si Heterostructures for Device Applications Using Spectroscopic Ellipsometry

    NASA Technical Reports Server (NTRS)

    Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.; Tanner, M.; Wang, K. L.; Mena, R. A.; Young, P. G.

    1993-01-01

    Spectroscopic ellipsometry (SE) characterization of several complex Si (sub X)Ge (sub 1-x)/Si heterostructures prepared for device fabrication, including structures for heterojunction bipolar transistors (HBT), p-type and n-type heterostructure modulation doped field effect transistors, has been performed. We have shown that SE can simultaneously determine all active layer thicknesses, Si (sub X)Ge (sub 1-x) compositions, and the oxide overlayer thickness, with only a general knowledge of the structure topology needed a priori. The characterization of HBT material included the SE analysis of a Si (sub X)Ge (sub 1-x) layer deeply buried (600 nanometers) under the silicon emitter and cap layers. In the SE analysis of n-type heterostructures, we examined for the first time a silicon layer under tensile strain. We found that an excellent fit can be obtained using optical constants of unstrained silicon to represent the strained silicon conduction layer. We also used SE to measure lateral sample homogeneity, providing quantitative identification of the inhomogeneous layer. Surface overlayers resulting from prior sample processing were also detected and measured quantitatively. These results should allow SE to be used extensively as a non-destructive means of characterizing Si (sub X)Ge (sub 1-x)/Si heterostructures prior to device fabrication and testing.

  6. Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures

    NASA Astrophysics Data System (ADS)

    Wang, K.; Payette, C.; Dovzhenko, Y.; Koppinen, P.; Petta, J. R.

    2012-02-01

    We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures [1] to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we are able to achieve two dimensional electron gases with low charge densities and high mobilities. We extract an electron temperature of 100 mK in the single quantum dot regime. Double quantum dots fabricated on these heterostructures show clear evidence of single charge transitions [2] as measured in dc transport and charge sensing. [4pt] [1] C. B. Simmons et al, Phys. Rev. Lett. 106, 156804 (2011).[0pt] [2] R. Hanson et al, Rev. Mod. Phys. 79, 1217 (2007).

  7. Different pulse pattern generation by frequency detuning in pulse modulated actively mode-locked ytterbium doped fiber laser

    NASA Astrophysics Data System (ADS)

    Chen, He; Chen, Sheng-Ping; Si, Lei; Zhang, Bin; Jiang, Zong-Fu

    2015-10-01

    We report the results of our recent experimental investigation of the modulation frequency detuning effect on the output pulse dynamics in a pulse modulated actively mode-locked ytterbium doped fiber laser. The experimental study shows the existence of five different mode-locking states that mainly depend on the modulation frequency detuning, which are: (a) amplitude-even harmonic/fundamental mode-locking, (b) Q-switched harmonic/fundamental mode-locking, (c) sinusoidal wave modulation mode, (d) pulses bundle state, and (e) noise-like state. A detailed experimental characterization of the output pulses dynamics in each operating mode is presented.

  8. Atomic Scale Chemical and Structural Characterization of Ceramic Oxide Heterostructure Interfaces

    SciTech Connect

    Singh, R. K.

    2003-04-16

    The research plan was divided into three tasks: (a) growth of oxide heterostructures for interface engineering using standard thin film deposition techniques, (b) atomic level characterization of oxide heterostructure using such techniques as STEM-2 combined with AFM/STM and conventional high-resolution microscopy (HRTEM), and (c) property measurements of aspects important to oxide heterostructures using standard characterization methods, including dielectric properties and dynamic cathodoluminescence measurements. Each of these topics were further classified on the basis of type of oxide heterostructure. Type I oxide heterostructures consisted of active dielectric layers, including the materials Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST), Y{sub 2}O{sub 3} and ZrO{sub 2}. Type II heterostructures consisted of ferroelectric active layers such as lanthanum manganate and Type III heterostructures consist of phosphor oxide active layers such as Eu-doped Y{sub 2}O{sub 3}.

  9. Silicon Germanium Strained Layers and Heterostructures

    NASA Astrophysics Data System (ADS)

    Willander, M.; Nur, O.; Jain, S. C.

    2004-01-01

    The integration of strained-Si1 xGex into Si technology has enhanced the performance and extended the functionality of Si based circuits. The improvement of device performance is observed in both AC as well as DC characteristics of these devices. The category of such devices includes field effect as well as bipolar families. Speed performance in some based circuits has reached limits previously dominated by III-V heterostructures based devices. In addition, for some optoelectronics applications including photodetectors it is now possible to easily integrate strained-Si1 xGex based optical devices into standard Silicon technology. The impact of integrating strained and relaxed Si1 xGex alloys into Si technology is important. It has lead to stimulate Si research as well as offers easy options for performances that requires very complicated and costly process if pure Si has to be used. In this paper we start by discussing the strain and stability of Si1 xGex alloys. The origin and the process responsible for transient enhanced diffusion (TED) in highly doped Si containing layers will be mentioned. Due to the importance of TED for thin highly doped Boron strained-Si1 xGex layers and its degrading consequences, possible suppression design methods will be presented. Quantum well pchannel MOSFETs (QW-PMOSFETs) based on thin buried QW are solution to the low speed and weak current derivability. Different aspects of designing these devices for a better performance are briefly reviewed. Other FETs based on tensile strained Si on relaxed Si1 xGex for n-channel and modulation doped field effect transistors (MODFETs) showed excellent performance. Record AC performance well above 200GHz for fmax is already observed and this record is expected to increase in the coming years. Heterojunction bipolar transistors (HPTs) with thin strained-Si1 xGex highly doped base have lead to optimize the performance of the bipolar technology for many applications easily. The strategies of design

  10. Photoluminescence Studies of P-type Modulation Doped GaAs/AlGaAs Quantum Wells in the High Doping Regime

    NASA Astrophysics Data System (ADS)

    Wongmanerod, S.; Holtz, P. O.; Reginski, K.; Bugaiski, M.; Monemar, B.

    The influence of high Be-acceptor doping on the modulation-doped GaAs/Al0.3Ga0.7As quantum wells structures has been optically studied by using the low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) techniques.The modulation doped samples were grown by the molecular-beam epitaxy technique with a varying Be acceptor concentration ranging from 1×1018 to 8×1018cm-3. Several novels physical effects were observed. The main effect is a significant shift of the main emission towards lower energies as the doping concentrations increase. There are two contradictory mechanisms, which determine the peak energy of the main emission; the shrinkage of the effective bandgap due to many body effects and the reduction of the exciton binding energy due to the carrier screening effect. We conclude that the first one is the dominating effect. At a sufficiently high doping concentration (roughly 2×1018cm-3), the lineshape of the main PL emission is modified, and a new feature, the so called Fermi-edge singularity (FES), appears on the high energy side of the PL emission and exhibits a blue-shift as a function of doping concentration. This feature has been found to be very sensitive to a temperature change, already in the range of 4.4-50K. In addition, PLE spectra with a suitable detection energy show that the absorption edge is blue-shifted with respect to the PL main emission. The resulting Stoke shift is due to phase-space-filling of the carriers, in agreement with the FES interpretation. Finally, we have found from the PLE spectra that the exciton quenching is initiated in the same doping regime. Compared to the exciton quenching in other p-type structures, the critical acceptor concentration required to quench the excitons is significantly lower than in the case of 2D structures with acceptor doping within the well, but larger than in the case of 3D bulk.

  11. Isoelectronic tungsten doping in monolayer MoSe2 for carrier type modulation

    DOE PAGES

    Li, Xufan; Lin, Ming -Wei; Basile, Leonardo; ...

    2016-07-06

    Doping and alloying are effective ways to engineer the band structure and modulate the optoelectronic functionality of monolayer transition metal dichalcogenides (TMDs). In this work, we explore the synthesis and electronic properties of monolayer Mo1-xWxSe2 (0 < x < 0.18) alloys with almost 100% alloying degree. The isoelectronic substitutional doping of tungsten for molybdenum in the monolayer MoSe2 is shown to suppress its intrinsically n-type conduction behavior, with p-type conduction gradually emerging to become dominant with increasing W concentration in the alloys. Atomic resolution Z-contrast electron microscopy show that W is shown to substitute directly for Mo without the introductionmore » of noticeable vacancy or interstitial defects, however with randomly-distributed W-rich regions ~2 nm in diameter. Scanning tunneling microscopy/spectroscopy measurements reveal that these W-rich regions exhibit a local band structure with the valence band maximum (VBM) closer to the Fermi level as compared with the Mo-rich regions in the monolayer Mo1-xWxSe2 crystal. These localized upshifts of the VBM in the local band structure appear responsible for the overall p-type behavior observed for the monolayer Mo1-xWxSe2 crystals. Stacked monolayers of n-type MoSe2 and p-type Mo1-xWxSe2 were demonstrated to form atomically thin, vertically stacked p n homojunctions with gate-tunable characteristics, which appear useful for future optoelectronic applications. Lastly, these results indicate that alloying with isoelectronic dopant atoms appears to be an effective and advantageous alternate strategy to doping or alloying with electron donors or acceptors in two-dimensional TMDs.« less

  12. Isoelectronic tungsten doping in monolayer MoSe2 for carrier type modulation

    SciTech Connect

    Li, Xufan; Lin, Ming -Wei; Basile, Leonardo; Hus, Saban M.; Puretzky, Alexander A.; Lee, Jaekwang; Kuo, Yen -Chien; Chang, Lo -Yueh; Wang, Kai; Idrobo, Juan C.; Li, An -Ping; Chen, Chia-Hao; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai

    2016-07-06

    Doping and alloying are effective ways to engineer the band structure and modulate the optoelectronic functionality of monolayer transition metal dichalcogenides (TMDs). In this work, we explore the synthesis and electronic properties of monolayer Mo1-xWxSe2 (0 < x < 0.18) alloys with almost 100% alloying degree. The isoelectronic substitutional doping of tungsten for molybdenum in the monolayer MoSe2 is shown to suppress its intrinsically n-type conduction behavior, with p-type conduction gradually emerging to become dominant with increasing W concentration in the alloys. Atomic resolution Z-contrast electron microscopy show that W is shown to substitute directly for Mo without the introduction of noticeable vacancy or interstitial defects, however with randomly-distributed W-rich regions ~2 nm in diameter. Scanning tunneling microscopy/spectroscopy measurements reveal that these W-rich regions exhibit a local band structure with the valence band maximum (VBM) closer to the Fermi level as compared with the Mo-rich regions in the monolayer Mo1-xWxSe2 crystal. These localized upshifts of the VBM in the local band structure appear responsible for the overall p-type behavior observed for the monolayer Mo1-xWxSe2 crystals. Stacked monolayers of n-type MoSe2 and p-type Mo1-xWxSe2 were demonstrated to form atomically thin, vertically stacked p n homojunctions with gate-tunable characteristics, which appear useful for future optoelectronic applications. Lastly, these results indicate that alloying with isoelectronic dopant atoms appears to be an effective and advantageous alternate strategy to doping or alloying with electron donors or acceptors in two-dimensional TMDs.

  13. Isoelectronic tungsten doping in monolayer MoSe2 for carrier type modulation

    SciTech Connect

    Li, Xufan; Lin, Ming -Wei; Basile, Leonardo; Hus, Saban M.; Puretzky, Alexander A.; Lee, Jaekwang; Kuo, Yen -Chien; Chang, Lo -Yueh; Wang, Kai; Idrobo, Juan C.; Li, An -Ping; Chen, Chia-Hao; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai

    2016-07-06

    Doping and alloying are effective ways to engineer the band structure and modulate the optoelectronic functionality of monolayer transition metal dichalcogenides (TMDs). In this work, we explore the synthesis and electronic properties of monolayer Mo1-xWxSe2 (0 < x < 0.18) alloys with almost 100% alloying degree. The isoelectronic substitutional doping of tungsten for molybdenum in the monolayer MoSe2 is shown to suppress its intrinsically n-type conduction behavior, with p-type conduction gradually emerging to become dominant with increasing W concentration in the alloys. Atomic resolution Z-contrast electron microscopy show that W is shown to substitute directly for Mo without the introduction of noticeable vacancy or interstitial defects, however with randomly-distributed W-rich regions ~2 nm in diameter. Scanning tunneling microscopy/spectroscopy measurements reveal that these W-rich regions exhibit a local band structure with the valence band maximum (VBM) closer to the Fermi level as compared with the Mo-rich regions in the monolayer Mo1-xWxSe2 crystal. These localized upshifts of the VBM in the local band structure appear responsible for the overall p-type behavior observed for the monolayer Mo1-xWxSe2 crystals. Stacked monolayers of n-type MoSe2 and p-type Mo1-xWxSe2 were demonstrated to form atomically thin, vertically stacked p n homojunctions with gate-tunable characteristics, which appear useful for future optoelectronic applications. Lastly, these results indicate that alloying with isoelectronic dopant atoms appears to be an effective and advantageous alternate strategy to doping or alloying with electron donors or acceptors in two-dimensional TMDs.

  14. Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

    DOE PAGES

    Shen, Youde; Chen, Renjie; Yu, Xuechao; ...

    2016-06-02

    Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor–liquid–solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. In this paper, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs–Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed tomore » impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs–Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. Finally, these results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices.« less

  15. Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

    SciTech Connect

    Shen, Youde; Chen, Renjie; Yu, Xuechao; Wang, Qijie; Jungjohann, Katherine L.; Dayeh, Shadi A.; Wu, Tom

    2016-06-02

    Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor–liquid–solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. In this paper, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs–Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs–Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. Finally, these results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices.

  16. Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

    SciTech Connect

    Shen, Youde; Chen, Renjie; Yu, Xuechao; Wang, Qijie; Jungjohann, Katherine L.; Dayeh, Shadi A.; Wu, Tom

    2016-06-02

    Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor–liquid–solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. In this paper, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs–Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs–Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. Finally, these results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices.

  17. Gibbs-Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth.

    PubMed

    Shen, Youde; Chen, Renjie; Yu, Xuechao; Wang, Qijie; Jungjohann, Katherine L; Dayeh, Shadi A; Wu, Tom

    2016-07-13

    Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor-liquid-solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. Here, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs-Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs-Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. These results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices.

  18. Long-lived electron spins in a modulation doped (100) GaAs quantum well

    NASA Astrophysics Data System (ADS)

    Colton, John; Meyer, David; Clark, Ken; Craft, Daniel; Tanner, Jane; Park, Tyler; White, Phil

    2013-03-01

    We have measured T1 spin lifetimes of a 14 nm modulation-doped (100) GaAs quantum well using a time-resolved pump-probe Kerr rotation technique. The quantum well was selected by tuning the wavelength of the probe laser. T1 lifetimes in excess of 1 microsecond were measured at 1.5 K and 5.5 T, exceeding the typical T2* lifetimes that have been measured in GaAs and II-VI quantum wells by orders of magnitude. We observed effects from nuclear polarization, which were largely removable by simultaneous nuclear magnetic resonance, along with two distinct lifetimes under some conditions that likely result from probing two differently-localized subsets of electrons.

  19. Long-lived electron spins in a modulation doped (100) GaAs quantum well

    NASA Astrophysics Data System (ADS)

    Colton, J. S.; Meyer, D.; Clark, K.; Craft, D.; Cutler, J.; Park, T.; White, P.

    2012-10-01

    We have measured T1 spin lifetimes of a 14 nm modulation-doped (100) GaAs quantum well using a time-resolved pump-probe Kerr rotation technique. The quantum well was selected by tuning the wavelength of the probe laser. T1 lifetimes in excess of 1 μs were measured at 1.5 K and 5.5 T, exceeding the typical T2* lifetimes that have been measured in GaAs and II-VI quantum wells by orders of magnitude. We observed effects from nuclear polarization, which were largely removable by simultaneous nuclear magnetic resonance, along with two distinct lifetimes under some conditions that likely result from probing two differently localized subsets of electrons.

  20. Key scattering mechanisms limiting the lateral transport in a modulation-doped polar heterojunction

    SciTech Connect

    Tien, Nguyen Thanh Thao, Pham Thi Bich; Thao, Dinh Nhu; Quang, Doan Nhat

    2016-06-07

    We present a study of the lateral transport of a two-dimensional electron gas (2DEG) in a modulation-doped polar heterojunction (HJ). In contrast to previous studies, we assume that the Coulomb correlation among ionized impurities and among charged dislocations in the HJ is so strong that the 2DEG low-temperature mobility is not limited by impurity and dislocation scattering. The mobility, however, is specified by alloy disorder scattering and combined roughness scattering, which is the total effect induced by both the potential barrier and polarization roughness. The obtained results show that the alloy disorder and combined roughness scattering strongly depend on the alloy content and on the near-interface electron distribution. Our theory is capable of explaining the bell-shaped dependence of the lateral mobility on alloy content observed in AlGaN/GaN and on 2DEG density observed in AlN/GaN, which have not previously been explained.

  1. Finite-temperature effects on conductance modulation by local doping in graphene with multiple magnetic barriers

    NASA Astrophysics Data System (ADS)

    Myoung, Nojoon; Lidorikis, Elefterios

    2015-12-01

    The electronic and transport properties of graphene modulated by magnetic barrier arrays are derived at finite temperatures. Prominent conductance gaps, originating from quantum interference effects are found in the periodic array case. When a structural defect is inserted in the array, sharp defect modes of high conductance appear within the conductance gaps. These modes are shifted by local doping in the defect region, resulting in large contrast in the ballistic conductance of graphene sheet. In general it is found that sensitivity is strongly dependent on temperature due to smoothing out of the defect-induced peaks and transport gaps. This temperature dependence, however, offers the added capability for sub-mK temperature sensing resolution, and thus an opportunity towards ultra-sensitive combined electrochemical-calorimetric sensing.

  2. Quantum transport in neutron-irradiated modulation-doped heterojunctions. I. Fast neutrons

    SciTech Connect

    Jin, W.; Zhou, J.; Huang, Y.; Cai, L.

    1988-12-15

    We have investigated the characteristics of low-temperature quantum transport in Al/sub x/Ga/sub 1-//sub x/As/GaAs modulation-doped heterojunctions irradiated by fast neutrons of about 14 MeV energy. The concentration and the mobility of the two-dimensional electron gas (2D EG) under low magnetic fields decrease with increase in the concentrations of scatterers, such as ionized impurities, lattice defects, and interface roughness. On the other hand, under strong magnetic fields, the Hall plateau broadening associated with the Landau localized states, and the Shubnikov--de Hass (SdH) oscillation enhancement associated with the Landau extended states, increase markedly after fast-neutron irradiation.

  3. Sulfur-doped microstructures formed in silicon using a modulated continuous wave laser

    NASA Astrophysics Data System (ADS)

    Ayachitula, R.; Brandt, L.; Chilton, M.; Knize, R. J.; Patterson, B. M.

    2013-05-01

    We demonstrate the enhanced optical properties of silicon microstructures formed by irradiation of a silicon surface by a modulated continuous wave (CW) laser beam in the presence of SF6. The microstructures are doped with about 0.6% sulfur, which extends the absorption well below the 1.1 μm bandgap of crystalline silicon and results in a 60% increase in the absorption of infrared radiation. This enhanced absorption as a result of these microstructures has been studied over the past decade in an effort to create high responsivity detectors and night vision goggles and improve the efficiency of solar cells. The enhanced optical absorption data we demonstrate are comparable to observations made in previous studies which were performed using more expensive and complicated laser systems such as regeneratively-amplified femtosecond pulsed laser systems and nanosecond and picosecond pulsed excimer lasers.

  4. Effect of free-carrier concentration and optical injection on carrier lifetimes in undoped and iodine doped CdMgTe/CdSeTe double heterostructures grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sohal, S.; Edirisooriya, M.; Ogedengbe, O. S.; Petersen, J. E.; Swartz, C. H.; LeBlanc, E. G.; Myers, T. H.; Li, J. V.; Holtz, M.

    2016-12-01

    Time-resolved and time integrated photoluminescence (PL) studies are reported for undoped and doped CdMgTe/CdSeTe double heterostructures (DHs) grown by molecular beam epitaxy. Undoped DHs are studied with absorber layer thickness varying from 0.5 to 2.5 µm. The n-type free-carrier concentration is varied ~7  ×  1015, 8.4  ×  1016, and 8.4  ×  1017 cm-3 using iodine as a dopant in different absorber layer thicknesses (0.25-2.0 µm). Optical injection is varied from 1  ×  1010 to 3  ×  1011 photons/pulse/cm2, corresponding to the initial injection of photo-carriers up to ~8  ×  1015 cm-3, to examine the effects of excess carrier concentration on the PL lifetimes. Undoped DHs exhibit an initial rapid decay followed by a slower dependence with carrier lifetimes up to ~485 ns. The dependence of carrier lifetimes on the thickness of the absorber layers (0.5-2.5 µm) suggests interface recombination velocities ({{v}\\operatorname{int}}~ ) ~ 1288 and 238 cm s-1 in the initial and later decay times, respectively, corresponding to high and low photo-carrier concentrations. The Shockley-Read-Hall model is used to describe the results in which variations are observed in {{v}\\operatorname{int}}~ for undoped DHs. The lifetimes of doped DHs show a consistent trend with thickness. The {{v}\\operatorname{int}}~ ~ 80-200 cm s-1 is estimated for doping n ~ 7  ×  1015 cm-3 and 240-410 cm s-1 for n ~ 8.4  ×  1016 cm-3. The observed decrease in carrier lifetimes with increasing n is consistent with growing importance of the radiative recombination rate due to the excess carrier concentration. The effect of carrier concentration on the PL spectrum is also discussed.

  5. Europium-doped mesoporous silica nanosphere as an immune-modulating osteogenesis/angiogenesis agent.

    PubMed

    Shi, Mengchao; Xia, Lunguo; Chen, Zetao; Lv, Fang; Zhu, Huiying; Wei, Fei; Han, Shengwei; Chang, Jiang; Xiao, Yin; Wu, Chengtie

    2017-11-01

    Although much research has gone into the design of nanomaterials, inflammatory response still impedes the capacity of nanomaterial-induced tissue regeneration. In-situ incorporation of nutrient elements in silica-based biomaterials has emerged as a new option to endow the nanomaterials modulating biological reactions. In this work, europium-doped mesoporous silica nanospheres (Eu-MSNs) were successfully synthesized via a one-pot method. The nanospheres (size of 280-300 nm) possess uniformly spherical morphology and mesoporous structure, and well distributed Eu elements. The nanospheres show distinct fluorescent property at 615 nm for potential bio-labeling. Noticeably, the Eu-MSNs stimulate pro-inflammatory response of macrophages and induce a modulated immune microenvironment, which further activates the osteogenic differentiation of bone marrow stromal cells (BMSCs) as well as angiogenic activity of human umbilical vein endothelial cells (HUVECs). During the process, osteogenesis-related genes (e.g. ALP, OCN, OPN and COL-I) of BMSCs, and angiogenesis-related genes (e.g. CD31, MMP9, VEGFR1/2, and PDGFRα/β) of HUVECs were significantly upregulated by Eu-MSNs modulating immune environment of macrophages. The in vivo study further demonstrated that the Eu-MSNs could not only stimulate osteogenesis by accelerating the new bone formation at critical-sized cranial defect site, but also support the blood vessel formation as well as collagen deposition and re-epithelialization at chronic skin wound sites, showing an improved angiogenesis activity when comparing with MSNs alone. Given the easy handling characteristics and extensive application potential, the results suggest that Eu-MSNs could be used as immunity-modulated osteogenesis/angiogenesis agent for skin and bone regeneration. Copyright © 2017 Elsevier Ltd. All rights reserved.

  6. Analytical treatment for the study of an erbium-doped fiber ring laser fed by a sinusoidally modulated pump power

    NASA Astrophysics Data System (ADS)

    Sola, I. J.; Martín, J. C.; Álvarez, J. M.

    2006-02-01

    An analytical procedure is employed to account for the response of an erbium-doped fiber ring laser whose pump power is sinusoidally modulated. The approximations considered, only strictly valid for very low modulation indexes (of the order of some hundredths), reveal the origin of some relationships between resonances of the main harmonics present in the laser response. However, both experimental and numerical results show how qualitative conclusions concerning relationships between harmonics are also valid for modulation indexes much higher than the ones corresponding to the approximation validity range.

  7. 10 Gbps Colorless Optical Source in Wavelength-Division Multiplexed Passive Optical Networks for Monolithic Integration of Deep-Ridge Waveguide Electroabsorption Modulator with Planar Buried-Heterostructure Semiconductor Optical Amplifier

    NASA Astrophysics Data System (ADS)

    Kim, Dong Churl; Kim, Ki Soo; Kim, Hyun-Soo; Choi, Byung-Seok; Kwon, O.-Kyun

    2012-05-01

    For the 10 Gbps colorless optical source in wavelength-division multiplexed passive optical networks (WDM-PONs), we have fabricated a semiconductor optical amplifier-reflective electorabsorption modulator (SOA-REAM) by monolithic integration of deep-ridge waveguide REAM (DRW-REAM) with planar buried-heterostructure (PBH) SOA using a PNP-current blocking layer. The SOA-REAM has a spot-size convertor for easy fiber coupling. Using a butterfly module with an SMA connector, we have packaged the SOA-REAM. At a -10 dBm input power of 1550 nm, the saturation output power is about 6 dBm. At 10.7 Gbps, we can obtain clear eye diagrams, and the power penalty at 10-9 bit-error rate (BER) after 20 km transmission is less than 1 dB over 35 nm.

  8. The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures

    SciTech Connect

    Seredin, P. V.; Gordienko, N. N.; Glotov, A. V.; Zhurbina, I. A.; Domashevskaya, E. P.; Arsent'ev, I. N. Shishkov, M. V.

    2009-08-15

    In structures with a porous buffer layer, residual internal stresses caused by a mismatch between the crystal-lattice parameters of the epitaxial GaInP alloy and the GaAs substrate are redistributed to the porous layer that acts as a buffer and is conducive to disappearance of internal stresses. Doping of the epitaxial layer with dysprosium exerts a similar effect on the internal stresses in the film-substrate structure.

  9. Study and Analysis of AlGaAs/GaAs Modulation Doped Field-Effect Transistors Incorporating P-Type Schottky Gate Barriers.

    DTIC Science & Technology

    1985-12-01

    Doped Structures (Al Ga As/GaAs) and Correlation x -x with Monte Carlo Calculations (GaAs)," Applied Physics Letters 41(3):277 (1 August 1982). 12...Transistors," Applied Physics Letters 40:879-881 (15 May 1982). 13. Drummond, T., W. Kopp, M. Keever, H. Morkoc, and A. Cho. "Electron Mobility in...34Mobility of the Two-Dimensional Electron Gas in GaAs-AlGaAs Heterostructures," Applied Physics Letters 45:695-697, (15 Sep 1984). 37. Linh, N., P

  10. Weakly doped InP layers prepared by liquid phase epitaxy using a modulated cooling rate

    NASA Astrophysics Data System (ADS)

    Krukovskyi, R.; Mykhashchuk, Y.; Kost, Y.; Krukovskyi, S.; Saldan, I.

    2017-04-01

    Epitaxial structures based on InP are widely used to manufacture a number of devices such as microwave transistors, light-emitting diodes, lasers and Gunn diodes. However, their temporary instability caused by heterogeneity of resistivity along the layer thickness and the influence of various external or internal factors prompts the need for the development of a new reliable technology for their preparation. Weak doping by Yb, Al and Sn together with modulation of the cooling rate applied to prepare InP epitaxial layers is suggested to be adopted within the liquid phase epitaxy (LPE) method. The experimental results confirm the optimized conditions created to get a uniform electron concentration in the active n-InP layer. A sharp profile of electron concentration in the n+-InP(substrate)/n-InP/n+-InP epitaxial structure was observed experimentally at the proposed modulated cooling rate of 0.3 °С-1.5 °С min-1. The proposed technological method can be used to control the electrical and physical properties of InP epitaxial layers to be used in Gunn diodes.

  11. Electronic properties of phosphorene/graphene heterostructures: Effect of external electric field

    SciTech Connect

    Kaur, Sumandeep; Srivastava, Sunita; Tankeshwar, K.; Kumar, Ashok

    2016-05-23

    We report the electronic properties of electrically gated heterostructures of black and blue phosphorene with graphene. The heterostructure of blue phosphorene with graphene is energetically more favorable than black phospherene/graphene. However, both are bonded by weak interlayer interactions. Graphene induces the Dirac cone character in both heterostructure which shows tunabilities with external electric field. It is found that Dirac cone get shifted depending on the polarity of external electric field that results into the so called self induced p-type or n-type doping effect. These features have importance in the fabrication of nano-electronic devices based on the phosphorene/graphene heterostructures.

  12. Modulation of magnetic damping constant of Fe2Co films by heavy doping of rare-earth Yb

    NASA Astrophysics Data System (ADS)

    Wu, Kai; Tang, Minghong; Li, Dong; Guo, Xiaobin; Cui, Baoshan; Yun, Jijun; Zuo, Yalu; Xi, L.; Zhang, Z. Z.

    2017-04-01

    The effect of rare-earth element Yb doping on modulating the magnetic properties, especially the damping constant, is investigated in a series of amorphous (Fe2Co)(1‑x)Yb x thin films by the time-resolved magneto-optical Kerr effect at room temperature. A linear decrease of the saturation magnetization and in-plane uniaxial anisotropy field with the increase of x was observed and explained by the diluted effect of non-magnetic Yb doping. The magnetic damping constant performs a remarkable increase with Yb concentration. X-ray photoelectron spectroscopy reveals partial oxidation of Yb, which has large orbital moment and the associated large spin–orbital coupling (SOC) strength and may be responsible for the increased damping constant in contrast with the expected weak SOC and associated low damping constant of metallic Yb doping.

  13. Chirp-free direct modulation of 550 nm emission in Er3+ -Doped Fluoroindate glass by nonlinear feedback control

    NASA Astrophysics Data System (ADS)

    Cai, Runyu; Thitsa, Makhin; Bluiett, Althea; Brown, Ei; Hommerich, Uwe

    2017-06-01

    We propose a direct modulation method with nonlinear feedback controller which can produce chirp-free modulation of the output pulse without bulky external modulators. This work reports the design of the controller which, via a feedback loop, varies and controls the pump rate in real time by automatically adjusting the pump power to precisely modulate the emission of 550 nm in Er3+ -doped Fluoroindate glass under 1.48 μm pumping. In this interdisciplinary paper, well established theoretical tools from nonlinear control theory are applied to the dynamical system of the laser material in order to produce the desired output of the laser. The controller is simulated in MATLAB Simulink and the simulation results show that our technique yields precise modulation of the output intensity without frequency chirping. Results on both theoretical analysis of the control methodology and simulation are presented.

  14. Nonlinear dynamics of Ytterbium-doped fiber laser Q-switched using acousto-optical modulator

    NASA Astrophysics Data System (ADS)

    Barmenkov, Y. O.; Kir'yanov, A. V.; Andres, M. V.

    2014-12-01

    A comprehensive experimental analysis of the dynamics of an ytterbium-doped fiber laser actively Q-switched (QS) using an intracavity acousto-optical modulator (AOM) is presented. It is shown that type of QS pulsing strongly depends on AOM repetition rate and pump power. In particular, at low repetition rates, including zero-rate, and at relatively high pump powers peculiar QS pulsing, switched by stimulated Brillouin scattering (SBS), is established in the laser. The cause of such kind of pulsing is the SBS-process boosted by spurious narrow-line CW lasing that arises in auxiliary low-Q cavity formed by an output coupler (in our experiments - fiber Bragg gratings) and weak reflections from blocked AOM. The parameters' area where this regime occurs is limited by certain values of pump power and AOM repetition rate. At increasing AOM repetition rate or decreasing pump power spurious CW lasing is not attained in the system; consequently, the SBS type of QS fades, while "conventional" QS (CQS) lasing is established in the system and remains. However CQS pulsing strongly suffers the nonlinear-dynamics effects: depending on AOM repetition rate and pump power the laser switches to common P1, P2, or P3 attractors, when QS pulses arise at sub-harmonics of AOM repetition rate, or to the specific transient regimes between them, or to chaotic operation. These and other sides (e.g. pulse jittering) of operation of the QS ytterbium-doped fiber laser with AOM are under scope of the present review as they have big interest for practical applications.

  15. Photodetectors based on heterostructures for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Nabet, Bahram; Cola, Adriano; Cataldo, Andrea; Chen, Xiying; Quaranta, Fabio

    2002-09-01

    In this work we describe a family of optical devices based on heterojunction and heterodimensional structures and we investigate their static and dynamic properties. Such devices are good candidates, due to their high performance, for utilization as the sensing element for the realization of sensors in the fields of telecommunications, remote sensing, LIDAR and medical imaging. First, we present a Heterostructure Metal-Semiconductor-Metal (HMSM) photodetectors that employ a uniformly doped GaAs/AlGaAs heterojunction for the dual purpose of barrier height enhancement and creating an internal electric field that aids in the transport and collection of the photogenerated electrons. In this first family of devices, two doping levels are compared showing the direct effect of the aiding field due to modulation doping. Subsequently, we analyze a novel Resonant-Cavity-Enhanced (RCE) HMSM photodetector in which a Distributed Bragg Reflector (DBR) is employed in order to reduce the thickness of the absorption layer thus achieving good responsivity and high speed as well as wavelength selectivity. Current-voltage, current-temperature, photocurrent spectra, high-speed time response, and on-wafer frequency domain measurements point out the better performance of this last family of detectors, as they can operate in tens of Giga-Hertz range with low dark current and high responsivity. Particularly, the I-V curves show a very low dark current (around 10 picoamps at operative biases); C-V measurements highlight the low geometrical capacitance values; the photocurrent spectrum shows a clear peak at 850 nm wavelength, while time response measurements give a 3 dB bandwidth of about 30 GHz. Small signal model based on frequency domain data is also extracted in order to facilitate future photoreceiver design. Furthermore, two-dimensional numerical simulations have been carried out in order to predict the electrical properties of these detectors. Combination of very low dark current and

  16. Novel mesoporous P-doped graphitic carbon nitride nanosheets coupled with ZnIn2S4 nanosheets as efficient visible light driven heterostructures with remarkably enhanced photo-reduction activity

    NASA Astrophysics Data System (ADS)

    Chen, Wei; Liu, Tian-Yu; Huang, Ting; Liu, Xiao-Heng; Yang, Xu-Jie

    2016-02-01

    In this report, we rationally designed and fabricated P-C3N4/ZnIn2S4 nanocomposites by in situ immobilizing ZnIn2S4 nanosheets onto the surface of mesoporous P-doped graphite carbon nitrogen (P-C3N4) nanosheets in a mixed solvothermal environment; their application to the photoreduction of 4-nitroaniline was used to estimate the photocatalytic performance. Different to the template route, here the mesoporous P-C3N4 nanosheets were prepared with a template-free strategy. The as-fabricated P-C3N4/ZnIn2S4 nanocomposites were systematically characterized by analyzing the phase structure, chemical components, electronic and optical properties and separation of charge carrier pairs. More importantly, these P-C3N4/ZnIn2S4 heterostructures have been proven to be highly efficient visible light responsive photocatalysts for photo-reduction, and meanwhile exhibit excellent photo-stability during recycling runs. The sufficient evidence reveals that the significantly improved photocatalytic performance is mainly attributed to the more efficient charge carrier separation based on the construction of a close heterogeneous interface. This work may provide new insights into the utilization of P-C3N4/ZnIn2S4 nanocomposites as visible light driven photocatalysts for comprehensive organic transformations in the field of fine chemical engineering.In this report, we rationally designed and fabricated P-C3N4/ZnIn2S4 nanocomposites by in situ immobilizing ZnIn2S4 nanosheets onto the surface of mesoporous P-doped graphite carbon nitrogen (P-C3N4) nanosheets in a mixed solvothermal environment; their application to the photoreduction of 4-nitroaniline was used to estimate the photocatalytic performance. Different to the template route, here the mesoporous P-C3N4 nanosheets were prepared with a template-free strategy. The as-fabricated P-C3N4/ZnIn2S4 nanocomposites were systematically characterized by analyzing the phase structure, chemical components, electronic and optical properties and

  17. Spatial modulation spectroscopy for imaging and quantitative analysis of single dye-doped organic nanoparticles inside cells

    NASA Astrophysics Data System (ADS)

    Devadas, Mary Sajini; Devkota, Tuphan; Guha, Samit; Shaw, Scott K.; Smith, Bradley D.; Hartland, Gregory V.

    2015-05-01

    Imaging of non-fluorescent nanoparticles in complex biological environments, such as the cell cytosol, is a challenging problem. For metal nanoparticles, Rayleigh scattering methods can be used, but for organic nanoparticles, such as dye-doped polymer beads or lipid nanoparticles, light scattering does not provide good contrast. In this paper, spatial modulation spectroscopy (SMS) is used to image single organic nanoparticles doped with non-fluorescent, near-IR croconaine dye. SMS is a quantitative imaging technique that yields the absolute extinction cross-section of the nanoparticles, which can be used to determine the number of dye molecules per particle. SMS images were recorded for particles within EMT-6 breast cancer cells. The measurements allowed mapping of the nanoparticle location and the amount of dye in a single cell. The results demonstrate how SMS can facilitate efforts to optimize dye-doped nanoparticles for effective photothermal therapy of cancer.Imaging of non-fluorescent nanoparticles in complex biological environments, such as the cell cytosol, is a challenging problem. For metal nanoparticles, Rayleigh scattering methods can be used, but for organic nanoparticles, such as dye-doped polymer beads or lipid nanoparticles, light scattering does not provide good contrast. In this paper, spatial modulation spectroscopy (SMS) is used to image single organic nanoparticles doped with non-fluorescent, near-IR croconaine dye. SMS is a quantitative imaging technique that yields the absolute extinction cross-section of the nanoparticles, which can be used to determine the number of dye molecules per particle. SMS images were recorded for particles within EMT-6 breast cancer cells. The measurements allowed mapping of the nanoparticle location and the amount of dye in a single cell. The results demonstrate how SMS can facilitate efforts to optimize dye-doped nanoparticles for effective photothermal therapy of cancer. Electronic supplementary information (ESI

  18. Anisotropic modulation of magnetic properties and the memory effect in a wide-band (011)-Pr0.7Sr0.3MnO3/PMN-PT heterostructure

    PubMed Central

    Zhao, Ying-Ying; Wang, Jing; Kuang, Hao; Hu, Feng-Xia; Liu, Yao; Wu, Rong-Rong; Zhang, Xi-Xiang; Sun, Ji-Rong; Shen, Bao-Gen

    2015-01-01

    Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezostrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remains a challenge. Here, we report on the electric-field control of magnetic properties in wide-band (011)-Pr0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures. By introducing an electric-field-induced in-plane anisotropic strain field during the cooling process from room temperature, we observe an in-plane anisotropic, nonvolatile modulation of magnetic properties in a wide-band Pr0.7Sr0.3MnO3 film at low temperatures. We attribute this anisotropic memory effect to the preferential seeding and growth of ferromagnetic (FM) domains under the anisotropic strain field. In addition, we find that the anisotropic, nonvolatile modulation of magnetic properties gradually diminishes as the temperature approaches FM transition, indicating that the nonvolatile memory effect is temperature dependent. By taking into account the competition between thermal energy and the potential barrier of the metastable magnetic state induced by the anisotropic strain field, this distinct memory effect is well explained, which provides a promising approach for designing novel electric-writing magnetic memories. PMID:25909177

  19. Anisotropic modulation of magnetic properties and the memory effect in a wide-band (011)-Pr0.7Sr0.3MnO3/PMN-PT heterostructure

    NASA Astrophysics Data System (ADS)

    Zhao, Ying-Ying; Wang, Jing; Kuang, Hao; Hu, Feng-Xia; Liu, Yao; Wu, Rong-Rong; Zhang, Xi-Xiang; Sun, Ji-Rong; Shen, Bao-Gen

    2015-04-01

    Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezostrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remains a challenge. Here, we report on the electric-field control of magnetic properties in wide-band (011)-Pr0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures. By introducing an electric-field-induced in-plane anisotropic strain field during the cooling process from room temperature, we observe an in-plane anisotropic, nonvolatile modulation of magnetic properties in a wide-band Pr0.7Sr0.3MnO3 film at low temperatures. We attribute this anisotropic memory effect to the preferential seeding and growth of ferromagnetic (FM) domains under the anisotropic strain field. In addition, we find that the anisotropic, nonvolatile modulation of magnetic properties gradually diminishes as the temperature approaches FM transition, indicating that the nonvolatile memory effect is temperature dependent. By taking into account the competition between thermal energy and the potential barrier of the metastable magnetic state induced by the anisotropic strain field, this distinct memory effect is well explained, which provides a promising approach for designing novel electric-writing magnetic memories.

  20. Anisotropic modulation of magnetic properties and the memory effect in a wide-band (011)-Pr0.7Sr0.3MnO3/PMN-PT heterostructure.

    PubMed

    Zhao, Ying-Ying; Wang, Jing; Kuang, Hao; Hu, Feng-Xia; Liu, Yao; Wu, Rong-Rong; Zhang, Xi-Xiang; Sun, Ji-Rong; Shen, Bao-Gen

    2015-04-24

    Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezostrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remains a challenge. Here, we report on the electric-field control of magnetic properties in wide-band (011)-Pr0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures. By introducing an electric-field-induced in-plane anisotropic strain field during the cooling process from room temperature, we observe an in-plane anisotropic, nonvolatile modulation of magnetic properties in a wide-band Pr0.7Sr0.3MnO3 film at low temperatures. We attribute this anisotropic memory effect to the preferential seeding and growth of ferromagnetic (FM) domains under the anisotropic strain field. In addition, we find that the anisotropic, nonvolatile modulation of magnetic properties gradually diminishes as the temperature approaches FM transition, indicating that the nonvolatile memory effect is temperature dependent. By taking into account the competition between thermal energy and the potential barrier of the metastable magnetic state induced by the anisotropic strain field, this distinct memory effect is well explained, which provides a promising approach for designing novel electric-writing magnetic memories.

  1. Modulation-doped growth of mosaic graphene with single-crystalline p–n junctions for efficient photocurrent generation

    PubMed Central

    Yan, Kai; Wu, Di; Peng, Hailin; Jin, Li; Fu, Qiang; Bao, Xinhe; Liu, Zhongfan

    2012-01-01

    Device applications of graphene such as ultrafast transistors and photodetectors benefit from the combination of both high-quality p- and n-doped components prepared in a large-scale manner with spatial control and seamless connection. Here we develop a well-controlled chemical vapour deposition process for direct growth of mosaic graphene. Mosaic graphene is produced in large-area monolayers with spatially modulated, stable and uniform doping, and shows considerably high room temperature carrier mobility of ~5,000 cm2 V−1 s−1 in intrinsic portion and ~2,500 cm2 V−1 s−1 in nitrogen-doped portion. The unchanged crystalline registry during modulation doping indicates the single-crystalline nature of p–n junctions. Efficient hot carrier-assisted photocurrent was generated by laser excitation at the junction under ambient conditions. This study provides a facile avenue for large-scale synthesis of single-crystalline graphene p–n junctions, allowing for batch fabrication and integration of high-efficiency optoelectronic and electronic devices within the atomically thin film. PMID:23232410

  2. Nonlinear response of a unidirectional erbium-doped fiber ring laser to a sinusoidally modulated pump power

    NASA Astrophysics Data System (ADS)

    Sola, I. J.; Martín, J. C.; Álvarez, J. M.

    2002-11-01

    The response of a unidirectional erbium-doped fiber ring laser, excited by a sinusoidally modulated pump power, is analyzed both experimentally and theoretically. Experimentally, several resonance peaks are observed, as well as different frequency ranges showing bistable behaviour. Appearance of all resonance peaks obtained can be explained taking into account simple relations between the pump modulation frequency and the system natural frequency. Theoretically, it is shown how a model which combines the theory of erbium-doped fibers and the semiclassical laser treatment can account for all phenomena observed, with good agreement. In particular, it is demonstrated that a correct description of the bistable regions requires taking into account powers and population distributions along the laser active medium.

  3. Pulsed Yb³⁺-doped fiber laser operating at 1011 nm by intra-cavity phase modulation.

    PubMed

    Jiang, Man; Zhou, Pu; Xiao, Hu; Tao, Rumao; Wang, Xiong

    2014-04-01

    A 1011 nm pulsed Yb³⁺-doped fiber laser is experimentally demonstrated by employing a commercially available LiNbO₃ phase modulator (PM) in the linear cavity. The resonator is built up with a section of normal single-cladding Yb³⁺-doped fiber, a PM, and a pair of fiber Bragg gratings. Active mode-locked stable trains of pulses with 2 and 1.4 ns are generated at repetition rates of 30.2478 and 60.4956 MHz, respectively. The maximum average output power is 10.6 mW at pump power of 200 mW, with the slope efficiency of 13.3%. Relaxation-oscillation-modulated pulses with width of 2 μs are obtained at a repetition rate of 27.778 kHz.

  4. Transparent conductivity modulation of ZnO by group-IVA doping

    NASA Astrophysics Data System (ADS)

    Liu, J.; Fan, X. F.; Sun, C. Q.; Zhu, W.

    2016-04-01

    We examined the effect of group-IVA doping on the electronic structure and transmittance of ZnO using first-principle calculations. All these doped ZnO materials are found to perform n-type conductive behavior. Si-doped ZnO and Pb-doped ZnO are found to have larger optical band gap than those of Ge-doped ZnO and Sn-doped ZnO. The transmittance of Si-doped ZnO is found to be high in both UV and visible region. The enhancement of UV region transmittance can be attributed to the enhanced optical band gap, while the reduction of visible region transmittance is due to the intraband optical transition.

  5. Examination of millimeter-wave performance potential of modulation doped AlGaAs/GaAs FET structures

    NASA Astrophysics Data System (ADS)

    Das, M. B.

    1985-09-01

    This investigation involved a critical examination of the millimeter-wave performance requirements of the modulation-doped n-AlGaAs/GaAs FET structures. The results of this study revealed the need for a high aspect ration design for the gate structure of MODFET's for millimeter-wave performance. A detailed design procedure has also been developed for submicron gate-length MODFET's, determination of carrier saturation velocity, and power gain and noise figure performance of MODFET's.

  6. Gate-tunable high mobility remote-doped InSb/In{sub 1−x}Al{sub x}Sb quantum well heterostructures

    SciTech Connect

    Yi, Wei E-mail: MSokolich@hrl.com; Kiselev, Andrey A.; Thorp, Jacob; Noah, Ramsey; Nguyen, Binh-Minh; Bui, Steven; Rajavel, Rajesh D.; Hussain, Tahir; Gyure, Mark F.; Sokolich, Marko E-mail: MSokolich@hrl.com; Kratz, Philip; Qian, Qi; Manfra, Michael J.; Pribiag, Vlad S.; Kouwenhoven, Leo P.; Marcus, Charles M.

    2015-04-06

    Gate-tunable high-mobility InSb/In{sub 1−x}Al{sub x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm{sup 2}/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO{sub 2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1 Ω·mm is achieved at 1.8 K.

  7. Dynamics of an erbium-doped fiber laser subjected to harmonic modulation of a diode pump laser

    NASA Astrophysics Data System (ADS)

    Pisarchik, Alexander N.; Kir'yanov, Alexander V.; Barmenkov, Yuri O.; Reategui, R. J.

    2004-10-01

    An erbium-doped fiber laser is shown to operate as a bistable or multistable nonlinear system under harmonic modulation of the diode pump laser. Phase- and frequency-dependent states are demonstrated both experimentally and in numerical simulations through codimensional-one and codimensional-two bifurcation diagrams in the parameter space of the modulation frequency and amplitude. In particular, generalized bistability results in doubling of saddle-node bifurcation lines where different coexisting attractors born. The laser model describes well all experimental features.

  8. Pulsed ytterbium-doped fibre laser with a combined modulator based on single-wall carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Khudyakov, D. V.; Borodkin, A. A.; Lobach, A. S.; Vartapetov, S. K.

    2015-09-01

    This paper describes an all-normal-dispersion pulsed ytterbium-doped fibre ring laser mode-locked by a nonlinear combined modulator based on single-wall carbon nanotubes. We have demonstrated 1.7-ps pulse generation at 1.04 μm with a repetition rate of 35.6 MHz. At the laser output, the pulses were compressed to 180 fs. We have examined an intracavity nonlinear modulator which utilises nonlinear polarisation ellipse rotation in conjunction with a saturable absorber in the form of a polymer-matrix composite film containing single-wall carbon nanotubes.

  9. Pulsed ytterbium-doped fibre laser with a combined modulator based on single-wall carbon nanotubes

    SciTech Connect

    Khudyakov, D V; Borodkin, A A; Vartapetov, S K; Lobach, A S

    2015-09-30

    This paper describes an all-normal-dispersion pulsed ytterbium-doped fibre ring laser mode-locked by a nonlinear combined modulator based on single-wall carbon nanotubes. We have demonstrated 1.7-ps pulse generation at 1.04 μm with a repetition rate of 35.6 MHz. At the laser output, the pulses were compressed to 180 fs. We have examined an intracavity nonlinear modulator which utilises nonlinear polarisation ellipse rotation in conjunction with a saturable absorber in the form of a polymer-matrix composite film containing single-wall carbon nanotubes. (lasers)

  10. Electrochemically modulated liquid chromatography using a boron-doped diamond particle stationary phase

    PubMed Central

    Muna, Grace W.; Swope, Vernon M.; Swain, Greg M.; Porter, Marc D.

    2011-01-01

    This paper reports on preliminary tests of the performance of boron-doped diamond powder (BDDP) as a stationary phase in electrochemically modulated liquid chromatography (EMLC). EMLC manipulates retention through changes in the potential applied (Eappl) to a conductive packing. Porous graphitic carbon (PGC) has routinely been utilized as a material in EMLC separations. Herein the utility of BDDP as a stationary phase in EMLC was investigated and its stability, both compositionally and microstructurally, relative to PGC was compared. The results show that BDDP is stable over a wide range of Eappl values (i.e., −1.2 to +1.2 V vs. Ag/AgCl, sat’d NaCl). The data also reveal that electrostatics play a key role in the adsorption of the aromatic sulfonates on the BDDP stationary phase, and that these analytes are more weakly retained in comparison to the PGC support. The potential for this methodology to provide a means to advance the understanding of molecular adsorption and retention mechanisms on carbonaceous materials is briefly discussed. PMID:18922535

  11. Blackbody-like emission of terahertz radiation from AlGaN/GaN heterostructure under electron heating in lateral electric field

    NASA Astrophysics Data System (ADS)

    Shalygin, V. A.; Vorobjev, L. E.; Firsov, D. A.; Sofronov, A. N.; Melentyev, G. A.; Lundin, W. V.; Nikolaev, A. E.; Sakharov, A. V.; Tsatsulnikov, A. F.

    2011-04-01

    The authors report on the observation and study of terahertz radiation emission from modulation-doped AlGaN/GaN heterostructure under conditions of heating of a two-dimensional electron gas in the lateral electric field. The experimental results are compared with the theoretical model of blackbody-like emission from hot two-dimensional electrons. Complementary transport measurements and a theoretical simulation were carried out to determine the dependence of effective electron temperature on electric field. The role of nonequilibrium optical phonon accumulation is discussed.

  12. Mass spectrometric characterization of the selective androgen receptor modulator (SARM) YK-11 for doping control purposes.

    PubMed

    Thevis, Mario; Piper, Thomas; Dib, Josef; Lagojda, Andreas; Kühne, Dirk; Packschies, Lars; Geyer, Hans; Schänzer, Wilhelm

    2017-07-30

    Selective androgen receptor modulators (SARMs) represent an emerging class of therapeutics targeting inter alia conditions referred to as cachexia and sarcopenia. Due to their anabolic properties, the use of SARMs is prohibited in sports as regulated by the World Anti-Doping Agency (WADA), and doping control laboratories test for these anabolic agents in blood and urine. In order to accomplish and maintain comprehensive test methods, the characterization of new drug candidates is critical for efficient sports drug testing. Hence, in the present study the mass spectrometric properties of the SARM YK-11 were investigated. YK-11 was synthesized according to literature data and three different stable-isotope-labeled analogs were prepared to support the mass spectrometric studies. Using high-resolution/high-accuracy mass spectrometry following electrospray ionization as well as electron ionization, the dissociation pathways of YK-11 were investigated, and characteristic features of its (product ion) mass spectra were elucidated. These studies were flanked by density functional theory (DFT) computation providing information on proton affinities of selected functional groups of the analyte. The steroidal SARM YK-11 was found to readily protonate under ESI conditions followed by substantial in-source dissociation processes eliminating methanol, acetic acid methyl ester, and/or ketene. DFT computation yielded energetically favored structures of the protonated species resulting from the aforementioned elimination processes particularly following protonation of the steroidal D-ring substituent. Underlying dissociation pathways were suggested, supported by stable-isotope labeling of the analyte, and diagnostic product ions for the steroidal nucleus and the D-ring substituent were identified. Further, trimethylsilylated YK-11 and its deuterated analogs were subjected to electron ionization high-resolution/high-accuracy mass spectrometry, complementing the dataset characterizing

  13. Dynamic modulation of electronic properties of graphene by localized carbon doping using focused electron beam induced deposition.

    PubMed

    Kim, S; Russell, M; Henry, M; Kim, S S; Naik, R R; Voevodin, A A; Jang, S S; Tsukruk, V V; Fedorov, A G

    2015-09-28

    We report on the first demonstration of controllable carbon doping of graphene to engineer local electronic properties of a graphene conduction channel using focused electron beam induced deposition (FEBID). Electrical measurements indicate that an "n-p-n" junction on graphene conduction channel is formed by partial carbon deposition near the source and drain metal contacts by low energy (<50 eV) secondary electrons due to inelastic collisions of long range backscattered primary electrons generated from a low dose of high energy (25 keV) electron beam (1 × 10(18) e(-) per cm(2)). Detailed AFM imaging provides direct evidence of the new mechanism responsible for dynamic evolution of the locally varying graphene doping. The FEBID carbon atoms, which are physisorbed and weakly bound to graphene, diffuse towards the middle of graphene conduction channel due to their surface chemical potential gradient, resulting in negative shift of Dirac voltage. Increasing a primary electron dose to 1 × 10(19) e(-) per cm(2) results in a significant increase of carbon deposition, such that it covers the entire graphene conduction channel at high surface density, leading to n-doping of graphene channel. Collectively, these findings establish a unique capability of FEBID technique to dynamically modulate the doping state of graphene, thus enabling a new route to resist-free, "direct-write" functional patterning of graphene-based electronic devices with potential for on-demand re-configurability.

  14. Heterostructure integrated thermionic coolers

    NASA Astrophysics Data System (ADS)

    Shakouri, Ali; Bowers, John E.

    1997-09-01

    Thermionic emission in heterostructures is proposed for integrated cooling of high power electronic and optoelectronic devices. This evaporative cooling is achieved by selective emission of hot electrons over a barrier layer from the cathode to the anode. It is shown that with available high electron mobility and low thermal conductivity materials, and with optimized conduction band offsets in heterostructures, single-stage room temperature cooling of up to 20°-40° over thicknesses of the order of microns is possible.

  15. Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer

    SciTech Connect

    Shim, Seong Hoon; Kim, Hyung-jun; Koo, Hyun Cheol; Lee, Yun-Hi; Chang, Joonyeon

    2015-09-07

    We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3 mV at 10 K and 0.8 mV even at 400 K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77 μm, respectively, at 200 K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.

  16. Modeling gate modulation effects on FET electrical characteristics with arbitrary doping profiles

    NASA Astrophysics Data System (ADS)

    Chiang, Min-Wen; Choma, J.; Kao, C.; Liao, J.

    1984-09-01

    A generalized approach for modeling the device characteristics of a JFET/MESFET, depletion MOSFET and MESFET/BUFFER structure with non-uniform doping profiles is derived from the depletion MOSFET viewpoint including the oxide layer explicitly. The results are exemplified for the power-law doping case with different oxide thickness and different dopant gradient.

  17. Bidirectional coupling of two erbium-doped fibre ring lasers subject to sine-wave pump modulation

    NASA Astrophysics Data System (ADS)

    Martín, J. C.

    2011-03-01

    Two erbium-doped fibre ring lasers are subject to different sine-wave pump modulation conditions, so that each of them may present periodic or chaotic response. For each working condition, the response of both lasers is analyzed for different coupling factors of their cavities. Many possible situations are found: as the coupling factor is swept from 0 to the maximum coupling allowed by the setup, for some modulation conditions no change of regime (periodic or chaotic) is observed, while in other cases the regime changes several times. Besides, it is found that the correlation between both laser emissions may not increase monotonously with the coupling factor: for certain intermediate coupling values, a correlation minimum is found. Nevertheless, a similar feature of all cases is the coupling ratio necessary to achieve a synchronized behaviour: it does not depend strongly on the modulation conditions chosen. The experimental results are compared with numerical simulations. An acceptable agreement is obtained.

  18. Cavity-less on-chip optomechanics using excitonic transitions in semiconductor heterostructures.

    PubMed

    Okamoto, Hajime; Watanabe, Takayuki; Ohta, Ryuichi; Onomitsu, Koji; Gotoh, Hideki; Sogawa, Tetsuomi; Yamaguchi, Hiroshi

    2015-10-19

    The hybridization of semiconductor optoelectronic devices and nanomechanical resonators provides a new class of optomechanical systems in which mechanical motion can be coupled to light without any optical cavities. Such cavity-less optomechanical systems interconnect photons, phonons and electrons (holes) in a highly integrable platform, opening up the development of functional integrated nanomechanical devices. Here we report on a semiconductor modulation-doped heterostructure-cantilever hybrid system, which realizes efficient cavity-less optomechanical transduction through excitons. The opto-piezoelectric backaction from the bound electron-hole pairs enables us to probe excitonic transition simply with a sub-nanowatt power of light, realizing high-sensitivity optomechanical spectroscopy. Detuning the photon energy from the exciton resonance results in self-feedback cooling and amplification of the thermomechanical motion. This cavity-less on-chip coupling enables highly tunable and addressable control of nanomechanical resonators, allowing high-speed programmable manipulation of nanomechanical devices and sensor arrays.

  19. High mobility one- and two-dimensional electron systems in nanowire-based quantum heterostructures.

    PubMed

    Funk, Stefan; Royo, Miguel; Zardo, Ilaria; Rudolph, Daniel; Morkötter, Stefanie; Mayer, Benedikt; Becker, Jonathan; Bechtold, Alexander; Matich, Sonja; Döblinger, Markus; Bichler, Max; Koblmüller, Gregor; Finley, Jonathan J; Bertoni, Andrea; Goldoni, Guido; Abstreiter, Gerhard

    2013-01-01

    Free-standing semiconductor nanowires in combination with advanced gate-architectures hold an exceptional promise as miniaturized building blocks in future integrated circuits. However, semiconductor nanowires are often corrupted by an increased number of close-by surface states, which are detrimental with respect to their optical and electronic properties. This conceptual challenge hampers their potentials in high-speed electronics and therefore new concepts are needed in order to enhance carrier mobilities. We have introduced a novel type of core-shell nanowire heterostructures that incorporate modulation or remote doping and hence may lead to high-mobility electrons. We demonstrate the validity of such concepts using inelastic light scattering to study single modulation-doped GaAs/Al0.16Ga0.84As core-multishell nanowires grown on silicon. We conclude from a detailed experimental study and theoretical analysis of the observed spin and charge density fluctuations that one- and two-dimensional electron channels are formed in a GaAs coaxial quantum well spatially separated from the donor ions. A total carrier density of about 3 × 10(7) cm(-1) and an electron mobility in the order of 50,000 cm(2)/(V s) are estimated. Spatial mappings of individual GaAs/Al0.16Ga0.84As core-multishell nanowires show inhomogeneous properties along the wires probably related to structural defects. The first demonstration of such unambiguous 1D- and 2D-electron channels and the respective charge carrier properties in these advanced nanowire-based quantum heterostructures is the basis for various novel nanoelectronic and photonic devices.

  20. Modulation doping of GaAs/AlGaAs core-shell nanowires with effective defect passivation and high electron mobility.

    PubMed

    Boland, Jessica L; Conesa-Boj, Sonia; Parkinson, Patrick; Tütüncüoglu, Gözde; Matteini, Federico; Rüffer, Daniel; Casadei, Alberto; Amaduzzi, Francesca; Jabeen, Fauzia; Davies, Christopher L; Joyce, Hannah J; Herz, Laura M; Fontcuberta i Morral, Anna; Johnston, Michael B

    2015-02-11

    Reliable doping is required to realize many devices based on semiconductor nanowires. Group III-V nanowires show great promise as elements of high-speed optoelectronic devices, but for such applications it is important that the electron mobility is not compromised by the inclusion of dopants. Here we show that GaAs nanowires can be n-type doped with negligible loss of electron mobility. Molecular beam epitaxy was used to fabricate modulation-doped GaAs nanowires with Al0.33Ga0.67As shells that contained a layer of Si dopants. We identify the presence of the doped layer from a high-angle annular dark field scanning electron microscopy cross-section image. The doping density, carrier mobility, and charge carrier lifetimes of these n-type nanowires and nominally undoped reference samples were determined using the noncontact method of optical pump terahertz probe spectroscopy. An n-type extrinsic carrier concentration of 1.10 ± 0.06 × 10(16) cm(-3) was extracted, demonstrating the effectiveness of modulation doping in GaAs nanowires. The room-temperature electron mobility was also found to be high at 2200 ± 300 cm(2) V(-1) s(-1) and importantly minimal degradation was observed compared with undoped reference nanowires at similar electron densities. In addition, modulation doping significantly enhanced the room-temperature photoconductivity and photoluminescence lifetimes to 3.9 ± 0.3 and 2.4 ± 0.1 ns respectively, revealing that modulation doping can passivate interfacial trap states.

  1. Effect of modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot lasers having different external loss

    NASA Astrophysics Data System (ADS)

    Korenev, V. V.; Savelyev, A. V.; Maximov, M. V.; Zubov, F. I.; Shernyakov, Yu. M.; Kulagina, M. M.; Zhukov, A. E.

    2017-09-01

    The influence of the modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot (QD) lasers is studied experimentally for devices having various external losses. It is shown that in the case of short cavities (high external loss), there is an increase in the lasing power component corresponding to the ground-state optical transitions of QDs as the p-doping level grows. However, in the case of long cavities (small external loss), higher dopant concentrations may have an opposite effect on the output power. Based on these observations, an optimal design of laser geometry and an optimal doping level are discussed.

  2. Investigation of bandgap modulation, field emission and dielectric properties of cadmium doped CaCu3 Ti4O12

    NASA Astrophysics Data System (ADS)

    Maitra, S.; Mitra, R.; Bera, K. P.; Nath, T. K.

    2017-05-01

    We have prepared cadmium doped CCTO (Ca1-xCdxCu3Ti4O12 where x = 0.01, 0.02, 0.03, 0.04, 0.05) by Molten Salt Synthesis technique. It has exhibited high level of crystallinity and a well defined micrometre sized grains with uniform cubic morphology, as confirmed by a combination of X-ray diffraction and field emission scanning electron microscopy. Thereby we have found the modulation of its semiconducting bandgap as a function of doping from recorded UV-Vis reflectance spectra using Kubelka Munk (KM) method where with increasing Cadmium doping content the bandgap is found to increase. We have also carried out investigation on the field emission properties of CCTO crystals and it has exhibited poor field emission characteristics. Finally, we have investigated the dielectric properties of CCTO as a function of temperature. It has exhibited a giant dielectric property with low loss over a considerable temperature regime (50-300°C) and is found to exhibit Maxwell Wagner type dielectric relaxation.

  3. Topological States of Heterostructures

    NASA Astrophysics Data System (ADS)

    Usanmaz, Demet; Nath, Pinku; Plata, Jose J.; Buongiorno Nardelli, Marco; Fornari, Marco; Curtarolo, Stefano

    Topological insulators (TIs) have exotic properties, such as having insulating behavior in the bulk and metallic states at the surface [1]. Observations of metallic states rely on the spin-orbit induced band inversion in bulk materials and are protected by time-reversal symmetry or crystal symmetry [ 2 ]. These remarkable characteristics of TIs give rise to various applications from spintronics to quantum computers. In order to broaden the range of applications of TIs and make it more effective, an exploration of high quality heterostructures are required. Creating heterostructures of TIs has recently demonstrated to be advantageous for controlling electronic properties [3]. Inspired by these interesting properties, we have investigated the topological interface states of heterostructures.

  4. Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale

    NASA Astrophysics Data System (ADS)

    Fisichella, Gabriele; Greco, Giuseppe; Roccaforte, Fabrizio; Giannazzo, Filippo

    2014-07-01

    Vertical heterostructures combining two or more graphene (Gr) layers separated by ultra-thin insulating or semiconductor barriers represent very promising systems for next generation electronics devices, due to the combination of high speed operation with wide-range current modulation by a gate bias. They are based on the specific mechanisms of current transport between two-dimensional-electron-gases (2DEGs) in close proximity. In this context, vertical devices formed by Gr and semiconductor heterostructures hosting an ``ordinary'' 2DEG can be also very interesting. In this work, we investigated the vertical current transport in Gr/Al0.25Ga0.75N/GaN heterostructures, where Gr is separated from a high density 2DEG by a ~24 nm thick AlGaN barrier layer. The current transport from Gr to the buried 2DEG was characterized at nanoscale using conductive atomic force microscopy (CAFM) and scanning capacitance microscopy (SCM). From these analyses, performed both on Gr/AlGaN/GaN and on AlGaN/GaN reference samples using AFM tips with different metal coatings, the Gr/AlGaN Schottky barrier height ΦB and its lateral uniformity were evaluated, as well as the variation of the carrier densities of graphene (ngr) and AlGaN/GaN 2DEG (ns) as a function of the applied bias. A low Schottky barrier (~0.40 eV) with excellent spatial uniformity was found at the Gr/AlGaN interface, i.e., lower compared to the measured values for metal/AlGaN contacts, which range from ~0.6 to ~1.1 eV depending on the metal workfunction. The electrical behavior of the Gr/AlGaN contact has been explained by Gr interaction with AlGaN donor-like surface states located in close proximity, which are also responsible of high n-type Gr doping (~1.3 × 1013 cm-2). An effective modulation of ns by the Gr Schottky contact was demonstrated by capacitance analysis under reverse bias. From this basic understanding of transport properties in Gr/AlGaN/GaN heterostructures, novel vertical field effect transistor concepts

  5. Novel engineered compound semiconductor heterostructures for advanced electronics applications

    NASA Astrophysics Data System (ADS)

    Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

    1992-06-01

    To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

  6. Spatial modulation of low-frequency spin fluctuations in hole-doped La{sub 2}CuO{sub 4}

    SciTech Connect

    Yamada, K.; Lee, C.H.; Wada, J.; Kurahashi, K.; Kimura, H.; Endoh, Y.; Hosoya, S.; Shirane, G.; Birgeneau, R.J.; Kastner, M.A.

    1996-12-01

    Systematic neutron scattering measurements have been performed on the Sr-doped La(2-x)Sr(x) CuO4 to study the doping dependence of spatially modulated dynamical spin correlations or so-called incommensurate spin fluctuations. The modulated spin correlations appears beyond x approx. 0.05 which is close to the lower boundary of the superconducting phase. First evidence was observed for the linear relation between the degree of spatial modulation or the incommensurability delta(x) and the maximum Tc at x. We present a universal curve for delta(x) by adding data from other La2CuO4 systems such as oxygen-doped superconductors, oxygen-reduced or Zn-substituted non-superconductors and La(1.6-x)Nd(0.4)Sr(x)CuO4.

  7. Ultraviolet-light-driven doping modulation in chemical vapor deposition grown graphene.

    PubMed

    Iqbal, M Z; Iqbal, M W; Khan, M F; Eom, Jonghwa

    2015-08-28

    The tuning of charge carrier density of graphene is an essential factor to achieve the integration of high-efficiency electronic and optoelectronic devices. We demonstrate the reversible doping in graphene using deep ultraviolet (UV) irradiation and treatment with O2 and N2 gases. The Dirac point shift towards a positive gate voltage of chemical vapor deposition grown graphene field-effect transistors confirms the p-type doping, which is observed under UV irradiation and treatment with O2 gas, while it restores its pristine state after treatment with N2 gas under UV irradiation. The emergence of an additional peak in the X-ray photoelectron spectra during UV irradiation and treatment with O2 gas represents the oxidation of graphene, and the elimination of this peak during UV irradiation and treatment with N2 gas reveals the restoration of graphene in its pristine state. The shift in the G and 2D bands in Raman spectra towards higher and then lower wavenumber also suggests p-type doping and then reversible doping in graphene. The controlled doping and its reversibility in large area grown graphene offer a new vision for electronic applications.

  8. Characterization of the transport properties of channel delta-doped structures by light-modulated Shubnikov-de Haas measurements

    NASA Technical Reports Server (NTRS)

    Mena, R. A.; Schacham, S. E.; Haugland, E. J.; Alterovitz, S. A.; Young, P. G.; Bibyk, S. B.; Ringel, S. A.

    1995-01-01

    The transport properties of channel delta-doped quantum well structures were characterized by conventional Hall effect and light-modulated Shubnikov-de Haas (SdH) effect measurements. The large number of carriers that become available due to the delta-doping of the channel, leads to an apparent degeneracy in the well. As a result of this degeneracy, the carrier mobility remains constant as a function of temperature from 300 K down to 1.4 K. The large amount of impurity scattering, associated with the overlap of the charge carriers and the dopants, resulted in low carrier mobilities and restricted the observation of the oscillatory magneto-resistance used to characterize the two-dimensional electron gas (2DEG) by conventional SdH measurements. By light-modulating the carriers, we were able to observe the SdH oscillation at low magnetic fields, below 1.4 tesla, and derive a value for the quantum scattering time. Our results for the ratio of the transport and quantum scattering times are lower than those previously measured for similar structures using much higher magnetic fields.

  9. Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors.

    PubMed

    Lee, Byoung Hoon; Bazan, Guillermo C; Heeger, Alan J

    2016-01-06

    Controlled device parameters of high-mobility polymer field-effect transistors (FETs) are demonstrated by modest doping and charge compensation. Through fleeting chemical vapor treatments of aligned poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-alt-[1,2,5]thiadiazolo-[3,4-c]pyridine] (PCDTPT) thin films as the charge transport layer in the FET channel, the FET properties are tailored by controlling doping concentration of the PCDTPT adjacent to metal electrodes. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Vertical 2D Heterostructures

    NASA Astrophysics Data System (ADS)

    Lotsch, Bettina V.

    2015-07-01

    Graphene's legacy has become an integral part of today's condensed matter science and has equipped a whole generation of scientists with an armory of concepts and techniques that open up new perspectives for the postgraphene area. In particular, the judicious combination of 2D building blocks into vertical heterostructures has recently been identified as a promising route to rationally engineer complex multilayer systems and artificial solids with intriguing properties. The present review highlights recent developments in the rapidly emerging field of 2D nanoarchitectonics from a materials chemistry perspective, with a focus on the types of heterostructures available, their assembly strategies, and their emerging properties. This overview is intended to bridge the gap between two major—yet largely disjunct—developments in 2D heterostructures, which are firmly rooted in solid-state chemistry or physics. Although the underlying types of heterostructures differ with respect to their dimensions, layer alignment, and interfacial quality, there is common ground, and future synergies between the various assembly strategies are to be expected.

  11. Two Carrier Analysis of Persistent Photoconductivity in Modulation-Doped Structures

    NASA Technical Reports Server (NTRS)

    Schacham, S. E.; Mena, R. A.; Haugland, E. J.; Alterovitz, S. A.

    1995-01-01

    A simultaneous fit of Hall and conductivity data gives quantitative results on the carrier concentration and mobility in both the quantum well and the parallel conduction channel. In this study this method was applied to reveal several new findings on the effect of persistent photoconductivity (PPC) on free-carrier concentrations and mobilities. The increase in the two-dimensional electron-gas (2DEG) concentration is significantly smaller than the apparent one derived from single carrier analysis of the Hall coefficient. In the two types of structures investigated, delta doped and continuously doped barrier, the apparent concentration almost doubles following illumination, while analysis reveals an increase of about 20% in the 2DEG. The effect of PPC on mobility depends on the structure. For the sample with a continuously doped barrier the mobility in the quantum well more than doubles. This increase is attributed to the effective screening of the ionized donors by the large electron concentration in the barrier. In the delta doped barrier sample the mobility is reduced by almost a factor of 2. This decrease is probably caused by strong coupling between the two wells, as is demonstrated by self-consistent analysis.

  12. Enhancement of thermoelectric performance in composite materials through locally-modulated doping

    NASA Astrophysics Data System (ADS)

    Adams, Michael J.; Jin, Hyungyu; Heremans, Joseph P.

    2015-03-01

    Composites of organic or inorganic constituents are often considered as a way to yield high thermoelectric figure of merit. The limit of this approach is set by the effective medium theory, which demonstrates formally that a composite of two materials A and B cannot have higher figure of merit than the highest of either A or B, in the absence of interaction between A and B. In this work, we show that this limit can be lifted by introducing into a host material a second phase that behaves differently vis-a-vis electrons than vis-a-vis phonons. This phase consists of electrically and thermally insulating islands of material that locally dope the semiconducting host. Doped material near the islands provides electrically conductive volumes for charge carriers. Phonons, unaffected by local doping, are scattered by the islands. Thermopower is less affected by the doped regions than electrical conductivity, by an intrinsic mathematical property of the effective medium theory. We employ this concept in Bi1-xSbx alloys and in p-type (Bi1-xSbx)2 Te3 compounds, which are known as good thermoelectric materials at cryogenic and room temperatures, respectively. Experimental transport data and the local microscopic characterizations of the samples are presented. Supported by DOE US-China Clean Energy Research Center SubK 3002041929, and by AFOSR MURI FA9550-10-1-0533.

  13. Drift velocity of electrons in quantum wells of selectively doped In{sub 0.5}Ga{sub 0.5}As/Al{sub x}In{sub 1-x}As and In{sub 0.2}Ga{sub 0.8}As/Al{sub x}Ga{sub 1-x}As heterostructures in high electric fields

    SciTech Connect

    Pozela, J. Pozela, K.; Raguotis, R.; Juciene, V.

    2011-06-15

    The field dependence of drift velocity of electrons in quantum wells of selectively doped In{sub 0.5}Ga{sub 0.5}As/Al{sub x}In{sub 1-x}As and In{sub 0.2}Ga{sub 0.8}As/Al{sub x}Ga{sub 1-x}As heterostructures is calculated by the Monte Carlo method. The influence of varying the molar fraction of Al in the composition of the Al{sub x}Ga{sub 1-x}As and Al{sub x}In{sub 1-x}As barriers of the quantum well on the mobility and drift velocity of electrons in high electric fields is studied. It is shown that the electron mobility rises as the fraction x of Al in the barrier composition is decreased. The maximum mobility in the In{sub 0.5}Ga{sub 0.5}As/In{sub 0.8}Al{sub 0.2}As quantum wells exceeds the mobility in a bulk material by a factor of 3. An increase in fraction x of Al in the barrier leads to an increase in the threshold field E{sub th} of intervalley transfer (the Gunn effect). The threshold field is E{sub th} = 16 kV/cm in the In{sub 0.5}Ga{sub 0.5}As/Al{sub 0.5}In{sub 0.5}As heterostructures and E{sub th} = 10 kV/cm in the In{sub 0.2}Ga{sub 0.8}As/Al{sub 0.3}Ga{sub 0.7}As heterostructures. In the heterostructures with the lowest electron mobility, E{sub th} = 2-3 kV/cm, which is lower than E{sub th} = 4 kV/cm in bulk InGaAs.

  14. Photoresponsive memory device based on Graphene/Boron Nitride heterostructure

    NASA Astrophysics Data System (ADS)

    Kahn, Salman; Velasco, Jairo, Jr.; Ju, Long; Wong, Dillon; Lee, Juwon; Tsai, Hsin Zon; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael

    2015-03-01

    Recent technological advancements have allowed the stacking of two dimensional layered material in order to create van der Waals heterostructures (VDH), enabling the design of novel properties by exploiting the proximal interaction between layers with different electronic properties. We report the creation of an optoelectronic memory device using a Graphene/Boron Nitride (hBN) heterostructure. Using the photo-induced doping phenomenon, we are able to spatially ``write'' a doping profile on graphene and ``read'' the profile through electrical transport and local probe techniques. We then utilize defect engineering to enhance the optoelectronic response of graphene and explore the effect of defects in hBN. Our work introduces a simple device architecture to create an optoelectronic memory device and contributes towards understanding the proximal effects of hBN on Graphene.

  15. Real-time measurement of photo-induced effects in 9,10-phenanthrenequinone-doped poly(methyl methacrylate) photopolymer by phase-modulated ellipsometry

    NASA Astrophysics Data System (ADS)

    Chuang, Chun-I.; Hsiao, Yi-Nan; Lin, Shiuan-Huei; Chao, Yu-Faye

    2010-09-01

    The photo-induced effects in 9,10-phenanthrenequinone-doped (PQ-doped) poly(methyl methacrylate) (PMMA) photopolymer were studied by phase-modulated ellipsometry and polarimetry in real time. The PQ-doped PMMA was exposed to an Ar/Kr tunable laser at the wavelength of 488 nm and measured by a HeNe laser (632.8 nm). We measured the induced birefringence and the variation of the refractive index separately during exposure; there was a difference of three orders of magnitude between these two effects. This suggested that the physical mechanism of holographic recording in PQ-doped PMMA is mainly due to the photo-induced variation in the refractive index.

  16. Thermal conductivity of carbon doped GeTe thin films in amorphous and crystalline state measured by modulated photo thermal radiometry

    NASA Astrophysics Data System (ADS)

    Kusiak, Andrzej; Battaglia, Jean-Luc; Noé, Pierre; Sousa, Véronique; Fillot, F.

    2016-09-01

    The thermal conductivity and thermal boundary resistance of GeTe and carbon doped GeTe thin films, designed for phase change memory (PCM) applications, were investigated by modulated photo thermal radiometry. It was found that C doping has no significant effect on the thermal conductivity of these chalcogenides in amorphous state. The thermal boundary resistance between the amorphous films and SiO2 substrate is also not affected by C doping. The films were then crystallized by an annealing at 450°C as confirmed by optical reflectivity analysis. The thermal conductivity of non-doped GeTe significantly increases after crystallization annealing. But, surprisingly the thermal conductivity of the crystallized C doped GeTe was found to be similar from that of the amorphous state and independent of C concentration. As for the amorphous phase, C doping does not affect the thermal boundary resistance between the crystalline GeTe films and SiO2 substrate. This behaviour is discussed thanks to XRD and FTIR analysis. In particular, XRD shows a decrease of crystalline grain size in crystalline films as C concentration is increased. FTIR analysis of the film before and after crystallization evidenced that this evolution could be attributed to the disappearing of Ge-C bonds and migration of C atoms out of the GeTe phase upon crystallization, limiting then the growth of GeTe crystallites in C-doped films.

  17. Ion-doping as a strategy to modulate hydroxyapatite nanoparticle internalization

    NASA Astrophysics Data System (ADS)

    Zhao, Z.; Espanol, M.; Guillem-Marti, J.; Kempf, D.; Diez-Escudero, A.; Ginebra, M.-P.

    2016-01-01

    Although it is widely acknowledged that ionic substitutions on bulk hydroxyapatite substrates have a strong impact on their biological performance, little is known of their effect on nanoparticles (NPs) especially when used for gene transfection or drug delivery. The fact that NPs would be internalized poses many questions but also opens up many new possibilities. The objective of the present work is to synthesize and assess the effect of a series of hydroxyapatite-like (HA) NPs doped with various ions on cell behavior, i.e. carbonate, magnesium and co-addition. We synthesized NPs under similar conditions to allow comparison of results and different aspects in addition to assessing the effect of the doping ion(s) were investigated: (1) the effect of performing the cell culture study on citrate-dispersed NPs and on agglomerated NPs, (2) the effect of adding/excluding 10% of foetal bovine serum (FBS) in the cell culture media and (3) the type of cell, i.e. MG-63 versus rat mesenchymal stem cells (rMSCs). The results clearly demonstrated that Mg-doping had a major effect on MG-63 cells with high cytotoxicity but not to rMSCs. This was a very important finding because it proved that doping could be a tool to modify NP internalization. The results also suggest that NP surface charge had a large impact on MG-63 cells and prevents their internalization if it is too negative--this effect was less critical for rMSCs.Although it is widely acknowledged that ionic substitutions on bulk hydroxyapatite substrates have a strong impact on their biological performance, little is known of their effect on nanoparticles (NPs) especially when used for gene transfection or drug delivery. The fact that NPs would be internalized poses many questions but also opens up many new possibilities. The objective of the present work is to synthesize and assess the effect of a series of hydroxyapatite-like (HA) NPs doped with various ions on cell behavior, i.e. carbonate, magnesium and co

  18. Modulation of the electron transport properties in graphene nanoribbons doped with BN chains

    SciTech Connect

    Liu, Wu; Zhang, Kaiwang Zhong, JianXin; Wang, Ru-Zhi; Liu, Li-Min

    2014-06-15

    Using density-functional theory and the non-equilibrium Green's function method, the electron transport properties of zigzag graphene nanoribbons (ZGNRs) doped with BN chains are studied by systematically calculating the energy band structure, density of states and the transmission spectra for the systems. The BN chains destroyed the electronic transport properties of the ZGNRs, and an energy gap appeared for the ZGNRs, and displayed variations from a metal to a wide-gap semiconductor. With an increase in the number of BN chains, the band gap increased gradually in the band structure and the transmission coefficient decreased near the Fermi surface. Additionally, the doping position had a significant effect on the electronic properties of the ZGNRs.

  19. Strain modulations of magnetism in Fe-doped InSe monolayer

    NASA Astrophysics Data System (ADS)

    Li, Xueping; Du, Juan; Wang, Lin; Xiong, Wenqi; Wang, Tianxing; Xia, Congxin

    2017-10-01

    First-principles calculations are performed to investigate the electronic and magnetic characteristics of Fe-doped two-dimensional (2D) InSe monolayer by applying biaxial compressive and tensile strains. Our studies show that Fe substituting indium atom can be realized easily under Se-rich experimental environments, and can induce the magnetic semiconducting characteristics. Interestingly, the magnetic moments are insensitive to the strain -6% to 6% range. However, loading larger tensile strain can decrease the magnetic moments sharply. Moreover, the system still retains semiconducting characteristics under compressive strain, while a transition occurs from semiconductor to metal beyond the tensile strain 8%. These results provide the theoretical predications that Fe-doped 2D InSe material may be applied in the spintronic devices.

  20. Self-amplitude and self-phase modulation of the charcoal mode-locked erbium-doped fiber lasers.

    PubMed

    Lin, Yung-Hsiang; Lo, Jui-Yung; Tseng, Wei-Hsuan; Wu, Chih-I; Lin, Gong-Ru

    2013-10-21

    With the intra-cavity nano-scale charcoal powder based saturable absorber, the 455-fs passive mode-locking of an L-band erbium-doped fiber laser (EDFL) is demonstrated. The size reduction of charcoal nano-particle is implemented with a simple imprinting-exfoliation-wiping method, which assists to increase the transmittance up to 0.91 with corresponding modulation depth of 26%. By detuning the power gain from 17 to 21 dB and cavity dispersion from -0.004 to -0.156 ps² of the EDFL, the shortening of mode-locked pulsewidth from picosecond to sub-picosecond by the transformation of the pulse forming mechanism from self-amplitude modulation (SAM) to the combining effect of self-phase modulation (SPM) and group delay dispersion (GDD) is observed. A narrower spectrum with 3-dB linewidth of 1.83-nm is in the SAM case, whereas the spectral linewidth broadens to 5.86 nm with significant Kelly sideband pair can be observed if the EDFL enters into the SPM regime. The mode-locking mechanism transferred from SAM to SPM/GDD dominates the pulse shortening procedure in the EDFL, whereas the intrinsic defects in charcoal nano-particle only affect the pulse formation at initial stage. The minor role of the saturable absorber played in the EDFL cavity with strongest SPM is observed.

  1. The use of nonlinear dynamics of erbium-doped fiber laser at pump modulation for intra-cavity sensing

    NASA Astrophysics Data System (ADS)

    Arellano-Sotelo, H.; Kir'yanov, A. V.; Barmenkov, Yu. O.; Aboites, V.

    2011-02-01

    We report the use of nonlinear dynamics of an erbium-doped fiber laser (EDFL) at pump modulation, namely the period-1 pulsed regime, for intra-cavity loss sensing and demonstrate noticeable sensitivity enhancement of an EDFL-based sensor, provided by this arrangement. Experimentally, we obtain a ten-fold increase of the sensor response, i.e. peak-to-peak pulse amplitude against loss variation, as compared with the standard sensing schemes using a low-power wide-spectrum light emitting diode (LED) or fiber laser without external modulation. This advantage originates from a strong dependence of pulse amplitude in the period-1 regime on intra-cavity loss variable that is, in turn, determined by the interrelation of relaxation frequency (an internal EDFL parameter) and frequency and depth of external (pump) modulation. A modeling of the EDFL-based sensor, presented for the case when the laser operates in the period-1 regime, allows an insight into the sensor operation details and opens the gate to its further optimization. The proposed sensing method seems to be a proper choice for the applications where an intra-cavity sensor's head has high internal loss (≥10 dB) while sensed loss is varied within a quite narrow range (a few dB).

  2. Rare Earth Doped GaN Laser Structures Using Metal Modulated Epitaxy

    DTIC Science & Technology

    2015-03-30

    since defect levels play a big role in the energy transfer. We conclude that phase shift epitaxy has been thus proven effective in the doping...the system base pressure thus increase the detection limit of Ar. References 1. Ewald, P. P. "Introduction to the dynamical theory of X-ray...J. Heikenfeld, M. Garter, D. S. Lee, R. Birkhahn, and A. J. Steckl: Appl. Phys. Lett. 75 (1999) 1189. 5 Z. Q. Li, H. J. Bang , G. X. Piao, J

  3. Npn double heterostructure bipolar transistor with ingaasn base region

    DOEpatents

    Chang, Ping-Chih; Baca, Albert G.; Li, Nein-Yi; Hou, Hong Q.; Ashby, Carol I. H.

    2004-07-20

    An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.

  4. Mass spectrometric characterization of urinary metabolites of the selective androgen receptor modulator andarine (S-4) for routine doping control purposes.

    PubMed

    Thevis, Mario; Thomas, Andreas; Fusshöller, Gregor; Beuck, Simon; Geyer, Hans; Schänzer, Wilhelm

    2010-08-15

    Selective androgen receptor modulators (SARMs) are potent anabolic agents with tissue-selective properties. Due to their potential misuse in elite sport, the World Anti-Doping Agency (WADA) has prohibited SARMs since 2008, and although no representative drug candidate has yet received full clinical approval, recent findings of SARMs illegally sold via the internet have further supported the need to efficiently test for these compounds in doping controls. In the present communication, the mass spectrometric characterization of urinary metabolites of the SARM Andarine (also referred to as S-4) compared with earlier in vitro and animal studies is reported. Liquid chromatography interfaced to high-resolution/high-accuracy (tandem) mass spectrometry was used to identify phase I and II metabolites, confirming the predicted target analytes for sports drug testing purposes including the glucuronic acid conjugates of the active drug, its monohydroxylated and/or deacetylated product, the hydrolysis product resulting from the removal of the compound's B-ring, as well as the sulfate of the monohydroxylated and the deacetylated phase I metabolite. The obtained data will support future efforts to effectively screen for and confirm the misuse of the non-approved drug candidate Andarine. Copyright (c) 2010 John Wiley & Sons, Ltd.

  5. Field-Effect Modulation of Ambipolar Doping and Domain Wall Band Alignment in P-type Vanadium Dioxide Nanowires

    NASA Astrophysics Data System (ADS)

    Hou, Yasen; Peng, Xingyue; Yang, Yiming; Yu, Dong

    The sub-picosecond metal-insulator phase transition in vanadium dioxide (VO2) has attracted extensive attention with potential applications in ultrafast Mott transistors. However, the development of VO2-based transistors lags behind, owing to the lack of an efficient and hysteresis-free electrostatic doping control. Here we report the first synthesis of p-type single crystalline VO2nanowires via catalyst-free chemical vapor deposition. The p-type doping was unambiguously confirmed by both solid and electrochemical gating methods, and further evidenced by the scanning photocurrent microscopic measurements. Interestingly, we observed that the photocurrent spot polarity at the metal-insulator domain walls was reversibly switched by electrochemical gating, which indicates a band bending flipping. Furthermore, we eliminated the common hysteresis in gate sweep and greatly shortened the transistor response time via a hybrid gating method, which combines the merits of liquid ionic and solid gating. The capability of efficient field effect modulation of ambipolar conduction and band alignment offers new opportunities on understanding the phase transition mechanism and enables novel electronic applications based on VO2.

  6. Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Sieg, R. M.; Yao, H. D.; Snyder, P. G.; Woollam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.

    1991-01-01

    Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal-organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10% of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice-matched concentration.

  7. Q-switched mode-locking of an erbium-doped fiber laser using cavity modulation frequency detuning.

    PubMed

    Chang, You Min; Lee, Junsu; Jhon, Young Min; Lee, Ju Han

    2012-07-20

    We present the results of an investigation regarding a Q-switched mode-locked fiber laser scheme based on a cavity modulation frequency detuning technique. The approach is based on undamped laser relaxation oscillations occurring due to frequency detuning in the fundamental cavity resonance frequency. Through a range of experiments with an erbium-doped, fiber-based, ring-cavity laser, this approach has been shown to be capable of generating high-quality Q-switched mode-locked pulses from an optical fiber-based laser. The maximum frequency detuning range for a stable Q-switched mode-locking operation has been observed to vary depending on the pump power used. We found that the highest pulse peak power was obtained at the frequency detuning threshold at which the operation changed from the mode-locking to the Q-switched mode-locking regime.

  8. Evaluation of modulating field of photoreflectance of surface-intrinsic-n+ type doped GaAs by using photoinduced voltage

    NASA Astrophysics Data System (ADS)

    Lee, W. Y.; Chien, J. Y.; Wang, D. P.; Huang, K. F.; Huang, T. C.

    2002-04-01

    Photoreflectance (PR) of surface-intrinsic-n+ type doped GaAs has been measured for various power densities of pump laser. The spectra exhibited many Franz-Keldysh oscillations, whereby the strength of electric field F in the undoped layer can be determined. The thus obtained Fs are subject to photovoltaic effect and are less than built-in field Fbi. In the previous work we have obtained the relation F≈Fbi-δF/2 when δF≪Fbi by using electroreflectance to simulate PR, where δF is the modulating field of the pump beam. In this work a method was devised to evaluate δF by using photoinduced voltages Vs and, hence, the relation can be verified by PR itself. The δFs obtained by Vs are also consistent with those of using imaginary part of fast Fourier transform of PR spectra.

  9. The generation of Q-switched erbium-doped fiber laser using black phosphorus saturable absorber with 8% modulation depth

    NASA Astrophysics Data System (ADS)

    Fauziah, C. M.; Rosol, A. H. A.; Latiff, A. A.; Harun, S. W.

    2017-06-01

    We report a generation of the Q-switched laser operating in 1.55-micron region by using black phosphorus (BP) as a saturable absorber (SA). A 980-nm laser diode was pumped into Erbium-doped fiber (EDF) gain medium in ring cavity configuration. The BP-based SA was prepared by mechanically exfoliating the BP crystal using scotch tape. The obtained BP-tape SA has a modulation depth of 8 %. To realize a Q-switching operation, a small piece of the tape is then integrated into between two fiber ferrule tips. A stable Q-switching operation started at 40 mW. The maximum repetition rate obtainable at 28.57 kHz, with pulse width of 5.35 μs. This finding shows the BP is one of the promising material to work as an SA for pulsed laser generation.

  10. Heterostructures as a quantum optical klistron

    SciTech Connect

    Malov, Yu.A.

    1995-12-31

    THE beam of {open_quotes}hot{close_quotes} ballistic electrons which were first obtained experimentally in (1) is considered when passing through the heterostructures consisting of two potential barriers in barriers in the presence of FEL tuning in infra-red region. In the presence of the first barrier the electron beam in the FEL electromagnetic field can either absorb or emit the field quanta. The initial electron beam may split into states n=1 (absorption of one quantum), n=0 (the beam energy unchanged), and n=-1 (emission of one quantum). The interference of the states with n=0, n=1 and n=0, n=1 results in the initiation of two traveling modulation waves at electromagnetic frequency w. Beats between these waves in the region of the of their overlapping lead to a periodic dependence of the modulation from w. It has been found that the spontaneous coherent radiation (SCR) intensity oscillates with the period depending on FEL frequency w. It is possible to increase or to decrease the spectral intensity of SCR varying w. The suggested idea of modulation on the first barrier of heterostructures and the radiation of modulated electron beam on the second barrier is a scheme of an quantum optical klistron in infra-red region.

  11. Air-gap heterostructures

    NASA Astrophysics Data System (ADS)

    Heyn, Ch.; Schmidt, M.; Schwaiger, S.; Stemmann, A.; Mendach, S.; Hansen, W.

    2011-01-01

    We demonstrate the fabrication of thin GaAs layers which quasi hover above the underlying GaAs substrate. The hovering layers have a perfect epitaxial relationship to the substrate crystal lattice and are connected to the substrate surface only by lattice matched nanopillars of low density. These air-gap heterostructures are created by combining in situ molecular beam epitaxy compatible self-assembled droplet-etching and ex situ selective wet-chemical etching.

  12. Heterostructure infrared photovoltaic detectors

    NASA Astrophysics Data System (ADS)

    Rogalski, Antoni

    2000-08-01

    HgCdTe remains the most important material for infrared (IR) photodetectors despite numerous attempts to replace it with alternative materials such as closely related mercury alloys (HgZnTe, HgMnTe), Schottky barriers on silicon, SiGe heterojunctions, GaAs/AlGaAs multiple quantum wells, InAs/GaInSb strained layer superlattices, high temperature superconductors and especially two types of thermal detectors: pyroelectric detectors and silicon bolometers. It is interesting, however, that none of these competitors can compete in terms of fundamental properties. In addition, HgCdTe exhibits nearly constant lattice parameter which is of extreme importance for new devices based on complex heterostructures. The development of sophisticated controllable vapour phase epitaxial growth methods, such as MBE and MOCVD, has allowed fabrication of almost ideally designed heterojunction photodiodes. In this paper, examples of novel devices based on heterostructures operating in the long wavelength, middle wavelength and short wavelength spectral ranges are presented. Recently, more interest has been focused on p-n junction heterostructures. As infrared technology continues to advance, there is a growing demand for multispectral detectors for advanced IR systems with better target discrimination and identification. HgCdTe heterojunction detectors offer wavelength flexibility from medium wavelength to very long wavelength and multicolour capability in these regions. Recent progress in two-colour HgCdTe detectors is also reviewed.

  13. The electrical conductivity of thin film donor doped hematite: from insulator to semiconductor by defect modulation.

    PubMed

    Engel, J; Tuller, H L

    2014-06-21

    Hematite or α-Fe2O3 has emerged as a highly promising photoanode candidate for photoelectrochemical cells. While significant improvements in its performance have recently been achieved, it remains unclear why the maximum photocurrents still remain well below their theoretical predictions. Here, we report, for the first time, a detailed correlation between the electrical conductivity of undoped and 1 atom% Ti doped hematite and the conditions under which it was annealed (20 ≤ T ≤ 800 °C and 10(-4) ≤ pO2 ≤ 1 atm). Hematite thin films grown by pulsed laser deposition onto sapphire single crystals were evaluated by impedance spectroscopy. Hematite's room temperature conductivity can be increased from ∼10(-11) S cm(-1) for undoped films by as much as nine orders of magnitude by doping with the Ti donor. Furthermore, by controlling the non-stoichiometry of Ti-doped hematite, one can tune its conductivity by up to five orders of magnitude. Depending on processing conditions, donor dopants in hematite may be compensated largely by electrons or by ionic defects (Fe vacancies). A defect model was derived to explain this phenomenon. In addition, a temperature independent value for the electron mobility of 0.01 cm(2) V(-1) s(-1) for a donor density of 4.0 × 10(20) cm(-3) (1% Ti) was derived. These results highlight the importance of carefully controlling photoanode processing conditions, even when operating within the material's extrinsic dopant regime, and more generally, provide a model for the electronic properties of semiconducting metal oxide photoanodes.

  14. Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure

    DOE PAGES

    Laroche, D.; Huang, S. -H.; Chuang, Y.; ...

    2016-06-06

    We report the magneto-transport, scattering mechanisms, and e ective mass analysis of an ultralow density two-dimensional hole gas capacitively induced in an undoped strained Ge/Si0:2Ge0:8 heterostructure. This fabrication technique allows hole densities as low as p 1:1 1010 cm² to be achieved, more than one order of magnitude lower than previously reported in doped Ge/SiGe heterostructures. The power-law exponent of the electron mobility versus density curve, / n , is found to be 0:29 over most of the density range, implying that background impurity scattering is the dominant scattering mechanism at intermediate densities in such devices. A charge migration modelmore » is used to explain the mobility decrease at the highest achievable densities. The hole e ective mass is deduced from the temperature dependence of Shubnikov-de Haas oscillations. At p 1:0 1011cm², the e ective mass m is 0:105 m0, which is signi cantly larger than masses obtained from modulation-doped Ge/SiGe two-dimensional hole gases.« less

  15. Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure

    SciTech Connect

    Laroche, D.; Lu, T. M.; Huang, S.-H.; Chuang, Y.; Li, J.-Y.; Liu, C. W.

    2016-06-06

    We report the magneto-transport, scattering mechanisms, and effective mass analysis of an ultra-low density two-dimensional hole gas capacitively induced in an undoped strained Ge/Si{sub 0.2}Ge{sub 0.8} heterostructure. This fabrication technique allows hole densities as low as p ∼ 1.1 × 10{sup 10 }cm{sup −2} to be achieved, more than one order of magnitude lower than previously reported in doped Ge/SiGe heterostructures. The power-law exponent of the electron mobility versus density curve, μ ∝ n{sup α}, is found to be α ∼ 0.29 over most of the density range, implying that background impurity scattering is the dominant scattering mechanism at intermediate densities in such devices. A charge migration model is used to explain the mobility decrease at the highest achievable densities. The hole effective mass is deduced from the temperature dependence of Shubnikov-de Haas oscillations. At p ∼ 1.0 × 10{sup 11 }cm{sup −2}, the effective mass m* is ∼0.105 m{sub 0}, which is significantly larger than masses obtained from modulation-doped Ge/SiGe two-dimensional hole gases.

  16. Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure

    SciTech Connect

    Laroche, D.; Huang, S. -H.; Chuang, Y.; Li, J. -Y.; Liu, C. W.; Lu, T. M.

    2016-06-06

    We report the magneto-transport, scattering mechanisms, and e ective mass analysis of an ultralow density two-dimensional hole gas capacitively induced in an undoped strained Ge/Si0:2Ge0:8 heterostructure. This fabrication technique allows hole densities as low as p 1:1 1010 cm² to be achieved, more than one order of magnitude lower than previously reported in doped Ge/SiGe heterostructures. The power-law exponent of the electron mobility versus density curve, / n , is found to be 0:29 over most of the density range, implying that background impurity scattering is the dominant scattering mechanism at intermediate densities in such devices. A charge migration model is used to explain the mobility decrease at the highest achievable densities. The hole e ective mass is deduced from the temperature dependence of Shubnikov-de Haas oscillations. At p 1:0 1011cm², the e ective mass m is 0:105 m0, which is signi cantly larger than masses obtained from modulation-doped Ge/SiGe two-dimensional hole gases.

  17. Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure

    SciTech Connect

    Laroche, D.; Huang, S. -H.; Chuang, Y.; Li, J. -Y.; Liu, C. W.; Lu, T. M.

    2016-06-06

    We report the magneto-transport, scattering mechanisms, and e ective mass analysis of an ultralow density two-dimensional hole gas capacitively induced in an undoped strained Ge/Si0:2Ge0:8 heterostructure. This fabrication technique allows hole densities as low as p 1:1 1010 cm² to be achieved, more than one order of magnitude lower than previously reported in doped Ge/SiGe heterostructures. The power-law exponent of the electron mobility versus density curve, / n , is found to be 0:29 over most of the density range, implying that background impurity scattering is the dominant scattering mechanism at intermediate densities in such devices. A charge migration model is used to explain the mobility decrease at the highest achievable densities. The hole e ective mass is deduced from the temperature dependence of Shubnikov-de Haas oscillations. At p 1:0 1011cm², the e ective mass m is 0:105 m0, which is signi cantly larger than masses obtained from modulation-doped Ge/SiGe two-dimensional hole gases.

  18. Structural and magnetic properties of Ni 2MnIn Heusler thin films grown on modulation-doped InAs heterostructures with metamorphic buffer

    NASA Astrophysics Data System (ADS)

    Bohse, S.; Zolotaryov, A.; Volland, A.; Landgraf, B.; Albrecht, O.; Bastjan, M.; Vossmeyer, T.; Görlitz, D.; Heyn, Ch.; Hansen, W.

    2012-01-01

    This paper reports on the morphological, structural, magnetic, and magneto-optic properties of Ni 2MnIn Heusler films grown on InAs-high electron-mobility transistor structures (HEMT) with metamorphic buffers for spintronic applications. Similar to our previous results on the Ni 2MnIn/InAs (001) system, the Heusler layer is found to have a (110) orientation relative to the (001) InAs-HEMT surface. We observe almost equal spin-polarizations for Heusler films on (001) InAs-HEMT as well as on (001) InAs. In addition, we find further support for interfacial intermixing previously reported for the Ni 2MnIn/InAs (001) system. On the other hand, the Heusler/InAs-HEMT system shows distinct morphologic, structural, and magnetic properties as compared to the Ni 2MnIn/InAs (001) system. In particular, more rapid and complex plastic deformation effects resulting in a high surface density of pin-holes in the Heusler films are found. We report on complex mutual deformation effects between the Heusler films and the underlying InAs-HEMT structure. Furthermore, a hysteresis loop squareness close to 1 for a 50 nm Heusler film on InAs-HEMT is observed. We tentatively associate these phenomena with the higher mismatch strain of the Ni 2MnIn/InAs-HEMT system compared to Ni 2MnIn films grown on (001) InAs.

  19. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

    PubMed Central

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-01-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut - (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices. PMID:26916618

  20. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

    NASA Astrophysics Data System (ADS)

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-02-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut - (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices.

  1. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures.

    PubMed

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-02-26

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut Pb(Mg(1/3)Nb(2/3)O3-(PbTiO3) (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices.

  2. Strain-modulated ferromagnetism and band gap of Mn doped Bi2Se3

    NASA Astrophysics Data System (ADS)

    Qi, Shifei; Yang, Hualing; Chen, Juan; Zhang, Xiaoyang; Yang, Yingping; Xu, Xiaohong

    2016-07-01

    The quantized anomalous Hall effect (QAHE) have been theoretically predicted and experimentally confirmed in magnetic topological insulators (TI), but dissipative channels resulted by small-size band gap and weak ferromagnetism make QAHE be measured only at extremely low temperature (<0.1 K). Through density functional theory calculations, we systemically study of the magnetic properties and electronic structures of Mn doped Bi2Se3 with in-plane and out-of-plane strains. It is found that out-of-plane tensile strain not only improve ferromagnetism, but also enlarge Dirac-mass gap (up to 65.6 meV under 6% strain, which is higher than the thermal motion energy at room temperature ~26 meV) in the Mn doped Bi2Se3. Furthermore, the underlying mechanisms of these tunable properties are also discussed. This work provides a new route to realize high-temperature QAHE and paves the way towards novel quantum electronic device applications.

  3. Strain-modulated ferromagnetism and band gap of Mn doped Bi2Se3

    PubMed Central

    Qi, Shifei; Yang, Hualing; Chen, Juan; Zhang, Xiaoyang; Yang, Yingping; Xu, Xiaohong

    2016-01-01

    The quantized anomalous Hall effect (QAHE) have been theoretically predicted and experimentally confirmed in magnetic topological insulators (TI), but dissipative channels resulted by small-size band gap and weak ferromagnetism make QAHE be measured only at extremely low temperature (<0.1 K). Through density functional theory calculations, we systemically study of the magnetic properties and electronic structures of Mn doped Bi2Se3 with in-plane and out-of-plane strains. It is found that out-of-plane tensile strain not only improve ferromagnetism, but also enlarge Dirac-mass gap (up to 65.6 meV under 6% strain, which is higher than the thermal motion energy at room temperature ~26 meV) in the Mn doped Bi2Se3. Furthermore, the underlying mechanisms of these tunable properties are also discussed. This work provides a new route to realize high-temperature QAHE and paves the way towards novel quantum electronic device applications. PMID:27374782

  4. Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

    NASA Astrophysics Data System (ADS)

    Myoung, Nojoon; Park, Hee Chul; Lee, Seung Joo

    2016-04-01

    Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplored. Here, we present an analytical device model for graphene-based spintronics by using ferromagnetic graphene in vertical heterostructures. We consider a normal or ferroelectric insulator as a tunneling layer. The device concept yields a way of controlling spin transport through the vertical heterostructures, resulting in gate-tunable spin-switching phenomena. Also, we revealed that a ‘giant’ resistance emerges through a ferroelectric insulating layer owing to the anti-parallel configuration of ferromagnetic graphene layers by means of electric fields via gate and bias voltages. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures without use of magnetic fields.

  5. Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

    PubMed Central

    Myoung, Nojoon; Park, Hee Chul; Lee, Seung Joo

    2016-01-01

    Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplored. Here, we present an analytical device model for graphene-based spintronics by using ferromagnetic graphene in vertical heterostructures. We consider a normal or ferroelectric insulator as a tunneling layer. The device concept yields a way of controlling spin transport through the vertical heterostructures, resulting in gate-tunable spin-switching phenomena. Also, we revealed that a ‘giant’ resistance emerges through a ferroelectric insulating layer owing to the anti-parallel configuration of ferromagnetic graphene layers by means of electric fields via gate and bias voltages. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures without use of magnetic fields. PMID:27126101

  6. A magnetic heterostructure of topological insulators as a candidate for an axion insulator

    NASA Astrophysics Data System (ADS)

    Mogi, M.; Kawamura, M.; Yoshimi, R.; Tsukazaki, A.; Kozuka, Y.; Shirakawa, N.; Takahashi, K. S.; Kawasaki, M.; Tokura, Y.

    2017-05-01

    The axion insulator which may exhibit an exotic quantized magnetoelectric effect is one of the most interesting quantum phases predicted for the three-dimensional topological insulator (TI). The axion insulator state is expected to show up in magnetically doped TIs with magnetizations pointing inwards and outwards from the respective surfaces. Towards the realization of the axion insulator, we here engineered a TI heterostructure in which magnetic ions (Cr) are modulation-doped only in the vicinity of the top and bottom surfaces of the TI ((Bi,Sb)2Te3) film. A separation layer between the two magnetic layers weakens interlayer coupling between them, enabling the magnetization reversal of individual layers. We demonstrate the realization of the axion insulator by observing a zero Hall plateau (ZHP) (where both the Hall and longitudinal conductivity become zero) in the electric transport properties, excluding the other possible origins for the ZHP. The manifestation of the axion insulator can lead to a new stage of research on novel magnetoelectric responses in topological matter.

  7. A magnetic heterostructure of topological insulators as a candidate for an axion insulator.

    PubMed

    Mogi, M; Kawamura, M; Yoshimi, R; Tsukazaki, A; Kozuka, Y; Shirakawa, N; Takahashi, K S; Kawasaki, M; Tokura, Y

    2017-05-01

    The axion insulator which may exhibit an exotic quantized magnetoelectric effect is one of the most interesting quantum phases predicted for the three-dimensional topological insulator (TI). The axion insulator state is expected to show up in magnetically doped TIs with magnetizations pointing inwards and outwards from the respective surfaces. Towards the realization of the axion insulator, we here engineered a TI heterostructure in which magnetic ions (Cr) are modulation-doped only in the vicinity of the top and bottom surfaces of the TI ((Bi,Sb)2Te3) film. A separation layer between the two magnetic layers weakens interlayer coupling between them, enabling the magnetization reversal of individual layers. We demonstrate the realization of the axion insulator by observing a zero Hall plateau (ZHP) (where both the Hall and longitudinal conductivity become zero) in the electric transport properties, excluding the other possible origins for the ZHP. The manifestation of the axion insulator can lead to a new stage of research on novel magnetoelectric responses in topological matter.

  8. Probing interlayer interactions in WS2 -graphene van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Chung, Ting Fung; Yuan, Long; Huang, Libai; Chen, Yong P.

    Two-dimensional crystals based van der Waals coupled heterostructures are of interest owing to their potential applications for flexible and transparent electronics and optoelectronics. The interaction between the 2D layered crystals at the interfaces of these heterostructures is crucial in determining the overall performance and is strongly affected by contamination and interfacial strain. We have fabricated heterostructures consisting of atomically thin exfoliated WS2 and chemical-vapor-deposited (CVD) graphene, and studied the interaction and coupling between the WS2 and graphene using atomic force microscopy (AFM), Raman spectroscopy and femtosecond transient absorption measurement (TAM). Information from Raman-active phonon modes allows us to estimate charge doping in graphene and interfacial strain on the crystals. Spatial imaging probed by TAM can be correlated to the heterostructure surface morphology measured by AFM and Raman maps of graphene and WS2, showing how the interlayer coupling alters exciton decay dynamics quantitatively.

  9. 27Al fourier-transform electron-spin-echo modulation of Cu 2+-doped zeolites A and X

    NASA Astrophysics Data System (ADS)

    Goldfarb, Daniella; Kevan, Larry

    Cu 2+-doped NaA, CaA, and NaX zeolites were studied using the electron-spin-echo modulation (ESEM) method. In both hydrated and dehydrated samples 27Al modulation has been observed. The time-domain ESEM traces were Fourier transformed and analyzed in the frequency domain. All FT-ESEM spectra of the hydrated samples showed a single peak at the Larmor frequency of 27Ai, indicating that the zeeman interaction is dominant and that the 27Al quadrupole and hyperfine interactions are relatively small. Considerable changes in the spectrum appear upon dehydration. Several frequencies significantly different from the Larmor frequency appear and the spectrum depends on the major cocation present. The major features of the spectra of the dehydrated zeolites could be theoretically reproduced, using exact diagonalization of the nuclear Hamiltonian, with relatively large isotropic hyperfine and quadrupole coupling constants. For example, in CuCaA and CuNaA zeolites the isotropic hyperfine constant is in the range of 0.2-0.5 and 0.8-1.0 MHz, respectively, with the quadrupole coupling constant in the range of 6-10 MHz for both.

  10. Multifunctional tunable multiwavelength erbium-doped fiber laser based on tunable comb filter and intensity-dependent loss modulation

    NASA Astrophysics Data System (ADS)

    Quan, Mingran; Li, Yuan; Tian, Jiajun; Yao, Yong

    2015-04-01

    A multiwavelength erbium-doped fiber laser based on tunable comb spectral filter and intensity-dependent loss modulation is proposed and experimentally demonstrated. The laser allows fine and multifunctional tunable operations of channel-spacing, peak-location, spectral-range, and wavelength-number. More specifically, channel-spacing switch from 0.4 nm to 0.2 nm and peak-location adjustment within half of free spectrum range are obtained via controlling the tunable comb filter. The wavelength-number and the spectral-range of the lasing lines can be accurately controlled by intensity-dependent loss modulation in the laser cavity, enabled by a power-symmetric nonlinear optical loop mirror. In addition, fine control over the wavelength-number at fixed spectral-range is realized by simply adjusting the pump power. More important, the tunable operation process for every type of specific parameter is individual, without influences for other output parameters. Such features of this fiber laser make it useful and convenient for the practical application.

  11. N-type Self-Doping of Fluorinate Conjugated Polyelectrolytes for Polymer Solar Cells: Modulation of Dipole, Morphology, and Conductivity.

    PubMed

    Liu, Huimin; Huang, Liqiang; Cheng, Xiaofang; Hu, Aifeng; Xu, Haitao; Chen, Lie; Chen, Yiwang

    2017-01-11

    For the conjugated polyelectrolytes (CPEs) interlayers, many studies focus on the modulation of interfacial dipoles in the polymer solar cells (PSCs) by altering the side polar groups but usually ignore the functions of conjugated backbone engineering (CBE) through the delicate design to improve their functions. Herein, novel alcohol-soluble CPEs by incorporation of fluorinate benzene onto the backbone, namely PFf1B and PFf4B, have been synthesized to modulate the interfacial dipoles and charge mobility. A favorable bidipole composed of ion-induced dipole and F hydrogen bond-induced dipole was discovered to be responsible for the tunable work function of indium tin oxide (ITO) electrode. Moreover, a desirable nanowires morphology of the upper active layer has also been obtained with the help of the self-assembly of fluorinated CPEs. More intriguingly, an unusual n-type doping favored by fluorine-induced electron transfer (FIET) was observed in these CPEs, leading to the improvement in the electron mobility. As a consequence, these fluorinated CPEs were demonstrated with a general application in the PSCs based on various active layers. Note that PFf4B with the highest loading of F atoms can work efficiently in a thickness of up to 31.8 nm, which broke the thickness limitation of most reported CPEs interlayer.

  12. Samarium Doped Cerium Oxide Clusters: a Study on the Modulation of Electronic Structure

    NASA Astrophysics Data System (ADS)

    Topolski, Josey E.; Kafader, Jared O.; Marrero-Colon, Vicmarie; Chick Jarrold, Caroline

    2017-06-01

    Cerium oxide is known for its use in solid oxide fuel cells due to its high ionic conductivity. The doping of trivalent samarium atoms into cerium oxide is known to enhance the ionic conductivity through the generation of additional oxygen vacancies. This study probes the electronic structure of Sm_{x}Ce_{y}O_{z} (x+y=3, z=2-4) anion and neutral clusters. Anion photoelectron spectra of these mixed metal clusters exhibit additional spectral features not present in the previously studied cerium oxide clusters. Density functional theory calculations have been used to aid interpretation of collected spectra. The results of this work can be used to inform the design of materials used for solid oxide fuel cells.

  13. Cooled photodiodes based on a type-II single p-InAsSbP/ n-InAs heterostructure

    NASA Astrophysics Data System (ADS)

    Il'inskaya, N. D.; Karandashev, S. A.; Latnikova, N. M.; Lavrov, A. A.; Matveev, B. A.; Petrov, A. S.; Remennyi, M. A.; Sevost'yanov, E. N.; Stus', N. M.

    2013-09-01

    Analysis of current-voltage and spectral characteristics of photodiodes based on a single p-InAsSbP/ n-InAs heterostructure formed on a heavily doped n +-InAs substrate ( n + ˜ 1018 cm-3) is presented. It is shown that, at low temperatures (77 < T < 190 K), the generation-recombination current flow mechanism typical of p-i-n diodes dominates. Expected parameters of the photodiode that can be obtained using these heterostructures are presented.

  14. Two dimensional hole gas (2DHG) germanium junctionless P-FinFETs without impurity scattering achieved by modulation doping in channel

    NASA Astrophysics Data System (ADS)

    Chu, Chun-Lin; Chen, Bo-Yuan; Chen, Szu-Hung; Luo, Guang-Li; Wu, Wen-Fa; Yeh, Wen-Kuan

    2017-08-01

    For the junctionless field-effect transistors (JL-FETs), there is a big concern that the high channel doping degrades carrier mobility by ionized impurity scattering mechanism. In this work, a sandwiched Ge/GeSi/Ge layer structure is proposed to be used as JL-FinFET channel, and only the middle GeSi layer is modulation doped by B atoms. In this structure, two dimensional hole gas (2DHG) forms in the top and bottom Ge channel layers, and is separated from B dopant impurity in the middle GeSi layer. Due to high hole mobility of 2DHG, the device exhibits an enhanced on-state current. The finished 2DHG Ge JL-FinFET shows a 6× current enhancement as compared to controlled Ge JL-FinFET with a uniformly B-doped Ge channel.

  15. Heterostructure terahertz devices.

    PubMed

    Ryzhii, Victor

    2008-08-19

    The terahertz (THz) range of frequencies is borderline between microwave electronics and photonics. It corresponds to the frequency bands of molecular and lattice vibrations in gases, fluids, and solids. The importance of the THz range is in part due to numerous potential and emerging applications which include imaging and characterization, detection of hazardous substances, environmental monitoring, radio astronomy, covert inter-satellite communications, as well as biological and medical applications. During the last decades marked progress has been achieved in the development, fabrication, and practical implementation of THz devices and systems. This is primarily owing to the utilization of gaseous and free electron lasers and frequency converters using nonlinear optical phenomena as sources of THz radiation. However, such devices and hence the systems based on them are fairly cumbersome. This continuously stimulates an extensive search for new compact and efficient THz sources based on semiconductor heterostructures. Despite tremendous efforts lasting several decades, the so-called THz gap unbridged by semiconductor heterostructure electron and optoelectron devices still exists providing appropriate levels of power of the generated THz radiation. The invention and realization of quantum cascade lasers made of multiple quantum-well heterostructures already resulted in the partial solution of the problem in question, namely, in the successful coverage of the high-frequency portion of the THz gap (2-3 THz and higher). Further advancement to lower frequencies meets, perhaps, fundamental difficulties. All this necessitates further extensive theoretical and experimental studies of more or less traditional and novel semiconductor heterostructures as a basis for sources of THz radiation. This special issue includes 11 excellent original papers submitted by several research teams representing 14 institutions in Europe, America, and Asia. Several device concepts which

  16. Preface: Heterostructure terahertz devices

    NASA Astrophysics Data System (ADS)

    Ryzhii, Victor

    2008-08-01

    The terahertz (THz) range of frequencies is borderline between microwave electronics and photonics. It corresponds to the frequency bands of molecular and lattice vibrations in gases, fluids, and solids. The importance of the THz range is in part due to numerous potential and emerging applications which include imaging and characterization, detection of hazardous substances, environmental monitoring, radio astronomy, covert inter-satellite communications, as well as biological and medical applications. During the last decades marked progress has been achieved in the development, fabrication, and practical implementation of THz devices and systems. This is primarily owing to the utilization of gaseous and free electron lasers and frequency converters using nonlinear optical phenomena as sources of THz radiation. However, such devices and hence the systems based on them are fairly cumbersome. This continuously stimulates an extensive search for new compact and efficient THz sources based on semiconductor heterostructures. Despite tremendous efforts lasting several decades, the so-called THz gap unbridged by semiconductor heterostructure electron and optoelectron devices still exists providing appropriate levels of power of the generated THz radiation. The invention and realization of quantum cascade lasers made of multiple quantum-well heterostructures already resulted in the partial solution of the problem in question, namely, in the successful coverage of the high-frequency portion of the THz gap (2-3 THz and higher). Further advancement to lower frequencies meets, perhaps, fundamental difficulties. All this necessitates further extensive theoretical and experimental studies of more or less traditional and novel semiconductor heterostructures as a basis for sources of THz radiation. This special issue includes 11 excellent original papers submitted by several research teams representing 14 institutions in Europe, America, and Asia. Several device concepts which

  17. Nitrogen-doped carbon nanoparticle modulated turn-on fluorescent probes for histidine detection and its imaging in living cells

    NASA Astrophysics Data System (ADS)

    Zhu, Xiaohua; Zhao, Tingbi; Nie, Zhou; Miao, Zhuang; Liu, Yang; Yao, Shouzhuo

    2016-01-01

    In this work, nitrogen-doped carbon nanoparticle (N-CNP) modulated turn-on fluorescent probes were developed for rapid and selective detection of histidine. The as synthesized N-CNPs exhibited high fluorescence quantum yield and excellent biocompatibility. The fluorescence of N-CNPs can be quenched selectively by Cu(ii) ions with high efficiency, and restored by the addition of histidine owing to the competitive binding of Cu(ii) ions and histidine that removes Cu(ii) ions from the surface of the N-CNPs. Under the optimal conditions, a linear relationship between the increased fluorescence intensity of N-CNP/Cu(ii) ion conjugates and the concentration of histidine was established in the range from 0.5 to 60 μM. The detection limit was as low as 150 nM (signal-to-noise ratio of 3). In addition, the as-prepared N-CNP/Cu(ii) ion nanoprobes showed excellent biocompatibility and were applied for a histidine imaging assay in living cells, which presented great potential in the bio-labeling assay and clinical diagnostic applications.In this work, nitrogen-doped carbon nanoparticle (N-CNP) modulated turn-on fluorescent probes were developed for rapid and selective detection of histidine. The as synthesized N-CNPs exhibited high fluorescence quantum yield and excellent biocompatibility. The fluorescence of N-CNPs can be quenched selectively by Cu(ii) ions with high efficiency, and restored by the addition of histidine owing to the competitive binding of Cu(ii) ions and histidine that removes Cu(ii) ions from the surface of the N-CNPs. Under the optimal conditions, a linear relationship between the increased fluorescence intensity of N-CNP/Cu(ii) ion conjugates and the concentration of histidine was established in the range from 0.5 to 60 μM. The detection limit was as low as 150 nM (signal-to-noise ratio of 3). In addition, the as-prepared N-CNP/Cu(ii) ion nanoprobes showed excellent biocompatibility and were applied for a histidine imaging assay in living cells, which

  18. Giant structural modulation & abnormal ferromagnetism in ferroelectric & ultrathin ferromagnetic digital superlattices

    NASA Astrophysics Data System (ADS)

    Guo, Hangwen; Wang, Zhen; Saghayezhian, Mohammad; Chen, Lina; Jin, Rongying; Plummer, Ward; Zhang, Jiandi; Dong, Shuai

    The nature of magnetoelectric coupling in oxide heterostructure remains interesting but illusive, largely because the complex nature of interface intermixing and diffusion. In this work, we present our ability to fabricate superlattices consist of ferroelectric BTO & ferromagnetic LSMO, with minimum interfacial intermixing confined within half a unit cell. Such high quality superlattices with sharp interfaces allow us to explore magnetoelectric coupling effect into ultrathin region (reduced dimensionality) and observe ferroelectric induced abnormal magnetic behavior. A detailed STEM study reveals that the traditional electron/hole carrier doping scenario does not play a major role. Instead, distinct modulation of lattice displacement and octahedron tilting is responsible for the coupling effect and abnormal magnetic behavior. Our study highlights the importance of structural-property relationship in oxide heterostructures. Supported by U.S. DOE under Grant No. DOE DE-SC0002136.

  19. Photoluminescence studies of modulation doped coupled double quantum wells in magnetic fields

    SciTech Connect

    Kim, Y.; Perry, C.H. |; Simmons, J.A.; Klem, J.F.; Jones, E.D.; Rickel, D.G.

    1996-09-01

    We have studied the photoluminescence spectra of a series of mudulation doped couple double quantum well structures in parallel and perpendicular magnetic fields to 62 tesla at 4K and 77K, for B{parallel}a, the spectra display distinct Landau level transitions which show anti-crossing with the e1-hh1 exciton. At high fields, the lowest conduction band-valence exciton approaches the extrapolated 0- 0 Landau level. About 25 Tesla, there is valence band mixing of the e1-lh1, e1-hh2, e1-hh1 transitions. The spectral peaks display a diamagnetic shift in low in-plane magnetic fields which become linear in high fields. At magnetic fields beyond 40T, spin splitting is observed for both B{parallel}z and B{perpendicular} geometries. The partial energy gap discovered in conductance measurements in in-plane fields was not conclusively observed using photoluminescence spectroscopy, although anomalies in the energy dependence of the lowest level with magnetic field were evident at similar field values.

  20. Characterization of Enhanced Schottky-Barrier InGaAs/AlxGa(1-x)As Strained Channel Modulation-Doped Field-Effect Transistors.

    DTIC Science & Technology

    1987-12-01

    or GM) Extrinsic transconductance mS gmo Intrinsic transconductance mS Gmax Maximum available power gain dB GMAX Maximum available power gain dB Gd...quantization, density, and mobility of the 2DEG in modulation-doped layers has been investigated and is expanded upon in the following three sub...to investigate the quantum ..’-:" mechanical effect on charge control in MODFETs [98]. A self-consistent quantum mechanical model was used to

  1. Charge transfer in crystalline germanium/monolayer MoS2 heterostructures prepared by chemical vapor deposition.

    PubMed

    Lin, Yung-Chen; Bilgin, Ismail; Ahmed, Towfiq; Chen, Renjie; Pete, Doug; Kar, Swastik; Zhu, Jian-Xin; Gupta, Gautam; Mohite, Aditya; Yoo, Jinkyoung

    2016-11-10

    Heterostructuring provides novel opportunities for exploring emergent phenomena and applications by developing designed properties beyond those of homogeneous materials. Advances in nanoscience enable the preparation of heterostructures formed incommensurate materials. Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, are of particular interest due to their distinct physical characteristics. Recently, 2D/2D heterostructures have opened up new research areas. However, other heterostructures such as 2D/three-dimensional (3D) materials have not been thoroughly studied yet although the growth of 3D materials on 2D materials creating 2D/3D heterostructures with exceptional carrier transport properties has been reported. Here we report a novel heterostructure composed of Ge and monolayer MoS2, prepared by chemical vapor deposition. A single crystalline Ge (110) thin film was grown on monolayer MoS2. The electrical characteristics of Ge and MoS2 in the Ge/MoS2 heterostructure were remarkably different from those of isolated Ge and MoS2. The field-effect conductivity type of the monolayer MoS2 is converted from n-type to p-type by growth of the Ge thin film on top of it. Undoped Ge on MoS2 is highly conducting. The observations can be explained by charge transfer in the heterostructure as opposed to chemical doping via the incorporation of impurities, based on our first-principles calculations.

  2. The Origin of Giant Electrostriction in Gd-Doped Ceria as Studied by Modulation Excitation X-ray Absorption Spectroscopy

    NASA Astrophysics Data System (ADS)

    Lerner, Alyssa; Li, Yuanyuan; Frenkel, Anatoly; Korobko, Roman; Lubomirsky, Igor

    2014-03-01

    Electromechanical materials, such as piezoelectrics and electrostrictors, are ubiquitous. Recently, an unusually large electrostriction effect, which exceeds that of most common electrostrictors, was found in gadolinium-doped ceria thin films. It is likely to be explained by the dynamic response of oxygen vacancies to external electric field. Verifying this hypothesis is very challenging, as it is required to detect local atomic rearrangement at the 0.01 Å scale. Conventional structural methods have neither elemental specificity nor spatial sensitivity to such structural changes. We applied Quick Extended X-Ray Absorption Fine Structure used in the Modulation Excitation mode to directly observe the dynamic response of the Ce and Gd local environments to the electric field. While using periodic stimulation of the films by electric field in situ, we detected X-ray absorption spectra at the Ce and Gd absorption edges, thus enhancing the sensitivity to electro-active species. Our model of electromechanical activity in this system attributes it to a relatively small population of Ce ions with anomalously short Ce-O bonds formed near the oxygen vacancies. This finding suggests that other oxides with a large concentration of vacancies may exhibit even larger electrostriction.

  3. Nitrogen-doped carbon nanoparticle modulated turn-on fluorescent probes for histidine detection and its imaging in living cells.

    PubMed

    Zhu, Xiaohua; Zhao, Tingbi; Nie, Zhou; Miao, Zhuang; Liu, Yang; Yao, Shouzhuo

    2016-01-28

    In this work, nitrogen-doped carbon nanoparticle (N-CNP) modulated turn-on fluorescent probes were developed for rapid and selective detection of histidine. The as synthesized N-CNPs exhibited high fluorescence quantum yield and excellent biocompatibility. The fluorescence of N-CNPs can be quenched selectively by Cu(II) ions with high efficiency, and restored by the addition of histidine owing to the competitive binding of Cu(II) ions and histidine that removes Cu(II) ions from the surface of the N-CNPs. Under the optimal conditions, a linear relationship between the increased fluorescence intensity of N-CNP/Cu(II) ion conjugates and the concentration of histidine was established in the range from 0.5 to 60 μM. The detection limit was as low as 150 nM (signal-to-noise ratio of 3). In addition, the as-prepared N-CNP/Cu(II) ion nanoprobes showed excellent biocompatibility and were applied for a histidine imaging assay in living cells, which presented great potential in the bio-labeling assay and clinical diagnostic applications.

  4. Coherent dynamics of Landau-Levels in modulation doped GaAs quantum wells at high magnetic fields

    NASA Astrophysics Data System (ADS)

    Liu, Cunming; Paul, Jagannath; Reno, John; McGill, Stephen; Hilton, David; Karaiskaj, Denis

    By using two-dimensional Fourier transform spectroscopy, we investigate the dynamics of Landau-Levels formed in modulation doped GaAs/AlGaAs quantum wells of 18 nm thickness at high magnetic fields and low temperature. The measurements show interesting dephasing dynamics and linewidth dependency as a function of the magnetic field. The work at USF and UAB was supported by the National Science Foundation under grant number DMR-1409473. The work at NHMFL, FSU was supported by the National Science Foundation under grant numbers DMR-1157490 and DMR-1229217. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. Department of Energy, Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.

  5. Modulation of Crystal Surface and Lattice by Doping: Achieving Ultrafast Metal-Ion Insertion in Anatase TiO2.

    PubMed

    Wang, Hsin-Yi; Chen, Han-Yi; Hsu, Ying-Ya; Stimming, Ulrich; Chen, Hao Ming; Liu, Bin

    2016-10-11

    We report that an ultrafast kinetics of reversible metal-ion insertion can be realized in anatase titanium dioxide (TiO2). Niobium ions (Nb5+) were carefully chosen to dope and drive anatase TiO2 into very thin nanosheets standing perpendicularly onto transparent conductive electrode (TCE) and simultaneously construct TiO2 with an ion-conducting surface together with expanded ion diffusion channels, which enabled ultrafast metal ions diffusion across the electrolyte/solid interface and into the bulk of TiO2. To demonstrate the superior metal-ion insertion rate, the electrochromic features induced by ion intercalation were examined, which exhibited the best color switching speed of 4.82 s for coloration and 0.91 s for bleaching among all reported nano-sized TiO2 devices. When performed as the anode for the secondary battery, the modified TiO2 was capable to deliver a highly reversible capacity of 61.2 mAh g-1 at an ultrahigh specific current rate of 60 C (10.2 A g-1). This fast metal-ion insertion behavior was systematically investigated by the well-controlled electrochemical approaches, which quantitatively revealed both the enhanced surface kinetics and bulk ion diffusion rate. Our study could provide a facile methodology to modulate the ion diffusion kinetics for metal oxides.

  6. Magnetooptical study of CdSe/ZnMnSe semimagnetic quantum-dot ensembles with n-type modulation doping

    SciTech Connect

    Reshina, I. I. Ivanov, S. V.

    2014-12-15

    Magnetic and polarization investigations of the photoluminescence and resonant electron spin-flip Raman scattering in ensembles of self-organized CdSe/ZnMnSe semimagnetic quantum dots with n-type modulation doping are carried out. It is demonstrated that exciton transitions contribute to the photoluminescence band intensity, along with the transitions of trions in the singlet state. In the Hanle-effect measurements, negative circular polarization in zero magnetic field is observed, which is related to the optical orientation of a trion heavy hole. The lifetime and spin-relaxation time of a heavy hole are estimated as ≤3 and ≤1 ps, respectively. Such short times are assumed to be due to Auger recombination with the excitation of an intrinsic transition in a Mn{sup 2+} ion. Investigations of the photoluminescence-maximum intensity and shift in a longitudinal magnetic field at the σ{sup −}σ{sup +} and σ{sup −}σ{sup −} polarizations reveal the pronounced spin polarization of electrons. Under resonant excitation conditions, a sharp increase in the photoluminescence-band maximum intensity at σ{sup −} excitation polarization over the σ{sup +} one is observed. The Raman scattering peak at the electron spin-flip transition is observed upon resonant excitation in a transverse magnetic field in crossed linear polarizations. This peak is shown to be a Brillouin function of a magnetic field.

  7. Chemical redox modulated fluorescence of nitrogen-doped graphene quantum dots for probing the activity of alkaline phosphatase.

    PubMed

    Liu, JingJing; Tang, Duosi; Chen, Zhitao; Yan, Xiaomei; Zhong, Zhou; Kang, Longtian; Yao, Jiannian

    2017-03-08

    Alkaline phosphatase (ALP) as an essential enzyme plays an important role in clinical diagnoses and biomedical researches. Hence, the development of convenient and sensitivity assay for monitoring ALP is extremely important. In this work, on the basis of chemical redox strategy to modulate the fluorescence of nitrogen-doped graphene quantum dots (NGQDs), a novel label-free fluorescent sensing system for the detection of alkaline phosphatase (ALP) activity has been developed. The fluorescence of NGQDs is firstly quenched by ultrathin cobalt oxyhydroxide (CoOOH) nanosheets, and then restored by ascorbic acid (AA), which can reduce CoOOH to Co(2+), thus the ALP can be monitored based on the enzymatic hydrolysis of L-ascorbic acid-2-phosphate (AAP) by ALP to generate AA. Quantitative evaluation of ALP activity in a range from 0.1 to 5U/L with the detection limit of 0.07U/L can be realized in this sensing system. Endowed with high sensitivity and selectivity, the proposed assay is capable of detecting ALP in biological system with satisfactory results. Meanwhile, this sensing system can be easily extended to the detection of various AA-involved analytes.

  8. All-Optical, Photonic Band Gap Modulation in Azobenzene Liquid Crystal Doped Cholesterics (Preprint)

    DTIC Science & Technology

    2006-10-01

    pitch h of the CLC, ~A = hen 11- nJ..)and As = hn, where n IIand nl. are the local principal values of the refractive indices of the CLC and n = (n II...molecule is typically used to affect local LC-ordering. The ability to use this process to effectively (and reversibly) modulate the pitch of a CLC and...via irradiation of microwatt and even nanowatt power light beams due to photoisomerization processes of the azobenzene core. Due to a wide mesophase

  9. Photoluminescence properties of modulation-doped In{sub x}Al{sub 1–x}As/In{sub y}Ga{sub 1–y}As/In{sub x}Al{sub 1–x}As structures with strained inas and gaas nanoinserts in the quantum well

    SciTech Connect

    Galiev, G. B.; Vasil’evskii, I. S.; Klimov, E. A.; Klochkov, A. N.; Lavruhin, D. V.; Pushkarev, S. S.; Maltsev, P. P.

    2015-09-15

    The photoluminescence spectra of modulation-doped InAlAs/InGaAs/InAlAs heterostructures with quantum wells containing thin strained InAs and GaAs inserts are investigated. It is established that the insertion of pair InAs layers and/ or a GaAs transition barriers with a thickness of 1 nm into a quantum well leads to a change in the form and energy position of the photoluminescence spectra as compared with a uniform In{sub 0.53}Ga{sub 0.47}As quantum well. Simulation of the band structure shows that this change is caused by a variation in the energy and wave functions of holes. It is demonstrated that the use of InAs inserts leads to the localization of heavy holes near the InAs layers and reduces the energy of optical transitions, while the use of GaAs transition barriers can lead to inversion of the positions of the light- and heavy-hole subbands in the quantum well. A technique for separately controlling the light- and heavy-hole states by varying the thickness and position of the GaAs and InAs inserts in the quantum well is suggested.

  10. Interface modulated currents in periodically proton exchanged Mg doped lithium niobate

    SciTech Connect

    Neumayer, Sabine M.; Rodriguez, Brian J. E-mail: gallo@kth.se; Manzo, Michele; Gallo, Katia E-mail: gallo@kth.se; Kholkin, Andrei L.

    2016-03-21

    Conductivity in Mg doped lithium niobate (Mg:LN) plays a key role in the reduction of photorefraction and is therefore widely exploited in optical devices. However, charge transport through Mg:LN and across interfaces such as electrodes also yields potential electronic applications in devices with switchable conductivity states. Furthermore, the introduction of proton exchanged (PE) phases in Mg:LN enhances ionic conductivity, thus providing tailorability of conduction mechanisms and functionality dependent on sample composition. To facilitate the construction and design of such multifunctional electronic devices based on periodically PE Mg:LN or similar ferroelectric semiconductors, fundamental understanding of charge transport in these materials, as well as the impact of internal and external interfaces, is essential. In order to gain insight into polarization and interface dependent conductivity due to band bending, UV illumination, and chemical reactivity, wedge shaped samples consisting of polar oriented Mg:LN and PE phases were investigated using conductive atomic force microscopy. In Mg:LN, three conductivity states (on/off/transient) were observed under UV illumination, controllable by the polarity of the sample and the externally applied electric field. Measurements of currents originating from electrochemical reactions at the metal electrode–PE phase interfaces demonstrate a memresistive and rectifying capability of the PE phase. Furthermore, internal interfaces such as domain walls and Mg:LN–PE phase boundaries were found to play a major role in the accumulation of charge carriers due to polarization gradients, which can lead to increased currents. The insight gained from these findings yield the potential for multifunctional applications such as switchable UV sensitive micro- and nanoelectronic devices and bistable memristors.

  11. Imparting electroactivity to polycaprolactone fibers with heparin-doped polypyrrole: Modulation of hemocompatibility and inflammatory responses.

    PubMed

    Xiong, Gordon M; Yuan, Shaojun; Wang, Jun Kit; Do, Anh Tuan; Tan, Nguan Soon; Yeo, Kiat Seng; Choong, Cleo

    2015-09-01

    Hemocompatibility, anti-inflammation and anti-thrombogenicity of acellular synthetic vascular grafts remains a challenge in biomaterials design. Using electrospun polycaprolactone (PCL) fibers as a template, a coating of polypyrrole (PPy) was successfully polymerized onto the fiber surface. The fibers coated with heparin-doped PPy (PPy-HEP) demonstrated better electroactivity, lower surface resistivity (9-10-fold) and better anti-coagulation response (non-observable plasma recalcification after 30min vs. recalcification at 8-9min) as compared to fibers coated with pristine PPy. Red blood cell compatibility, measured by% hemolysis, was greatly improved on PPy-HEP-coated PCL in comparison to uncoated PCL (3.9±2.1% vs. 22.1±4.1%). PPy-HEP-coated PCL fibers also exhibited higher stiffness values (6.8±0.9MPa vs. 4.2±0.8MPa) as compared to PCL fibers, but similar tensile strengths. It was also observed that the application of a low alternating current led to a 4-fold reduction of platelet activation (as quantitated by CD62p expression) for the PPy-HEP-coated fibers as compared to non-stimulated conditions. In parallel, a reduction in the leukocyte adhesion to both pristine PPy-coated and PPy-HEP-coated fibers was observable with AC stimulation. Overall, a new strategy involving the use of hemocompatible conducting polymers and electrical stimulation to control thrombogenicity and inflammatory responses for synthetic vascular graft designs was demonstrated. Copyright © 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  12. Interface modulated currents in periodically proton exchanged Mg doped lithium niobate

    NASA Astrophysics Data System (ADS)

    Neumayer, Sabine M.; Manzo, Michele; Kholkin, Andrei L.; Gallo, Katia; Rodriguez, Brian J.

    2016-03-01

    Conductivity in Mg doped lithium niobate (Mg:LN) plays a key role in the reduction of photorefraction and is therefore widely exploited in optical devices. However, charge transport through Mg:LN and across interfaces such as electrodes also yields potential electronic applications in devices with switchable conductivity states. Furthermore, the introduction of proton exchanged (PE) phases in Mg:LN enhances ionic conductivity, thus providing tailorability of conduction mechanisms and functionality dependent on sample composition. To facilitate the construction and design of such multifunctional electronic devices based on periodically PE Mg:LN or similar ferroelectric semiconductors, fundamental understanding of charge transport in these materials, as well as the impact of internal and external interfaces, is essential. In order to gain insight into polarization and interface dependent conductivity due to band bending, UV illumination, and chemical reactivity, wedge shaped samples consisting of polar oriented Mg:LN and PE phases were investigated using conductive atomic force microscopy. In Mg:LN, three conductivity states (on/off/transient) were observed under UV illumination, controllable by the polarity of the sample and the externally applied electric field. Measurements of currents originating from electrochemical reactions at the metal electrode-PE phase interfaces demonstrate a memresistive and rectifying capability of the PE phase. Furthermore, internal interfaces such as domain walls and Mg:LN-PE phase boundaries were found to play a major role in the accumulation of charge carriers due to polarization gradients, which can lead to increased currents. The insight gained from these findings yield the potential for multifunctional applications such as switchable UV sensitive micro- and nanoelectronic devices and bistable memristors.

  13. Anomalous Enhancement of the Superconducting Transition Temperature of Electron-doped La2-xCexCuO4 and Pr2-xCexCuO4 Cuprate Heterostructures

    SciTech Connect

    K Jin; P Vach; X Zhang; U Grupel; E Zohar; I Diamant; Y Dagan; S Smadici; P Abbamonte; R Greene

    2011-12-31

    The superconducting transition temperature T{sub c} of multilayers of electron-doped cuprates, composed of underdoped (or undoped) and overdoped La{sub 2-x}Ce{sub x}CuO{sub 4} (LCCO) and Pr{sub 2-x}Ce{sub x}CuO{sub 4} (PCCO) thin films, is found to increase significantly with respect to the T{sub c} of the corresponding single-phase films. By investigating the critical current density of superlattices with different doping levels and layer thicknesses, we find that the T{sub c} enhancement is caused by a redistribution of charge over an anomalously large distance.

  14. Identifying suitable substrates for high-quality graphene-based heterostructures

    NASA Astrophysics Data System (ADS)

    Banszerus, L.; Janssen, H.; Otto, M.; Epping, A.; Taniguchi, T.; Watanabe, K.; Beschoten, B.; Neumaier, D.; Stampfer, C.

    2017-06-01

    We report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different substrate materials, including hexagonal boron nitride (hBN), transition metal dichalcogenides, silicon, different oxides and nitrides, as well as polymers. By applying a hBN-assisted, contamination free, dry transfer process for CVD graphene, high-quality heterostructures with low doping densities and low strain variations are assembled. The Raman spectra of these pristine heterostructures are sensitive to substrate-induced doping and strain variations and are thus used to probe the suitability of the substrate material for potential high-quality graphene devices. We find that the flatness of the substrate material is a key figure for gaining, or preserving high-quality graphene.

  15. Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots

    NASA Astrophysics Data System (ADS)

    Wang, Peng; Lin, Shisheng; Ding, Guqiao; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang

    2016-04-01

    We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.

  16. Thermal and Electrical Transport in Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Ravichandran, Jayakanth

    vacancies are employed to achieve band engineering. This method was used to obtain tunable transparent conducting properties and thermoelectric properties for heavily doped strontium titanate. The second aspect investigated is the use of strongly correlated materials for thermoelectricity. The cobaltates, specifically layered cobaltates, show large thermopower even at very large carrier densities. The coupling of thermopower and electrical conductivity is shown to be weaker for a strongly correlated material such as cobaltate, which opens up possibilities of complete decoupling of all three thermoelectric coefficients. Finally, the thermal properties of complex oxides, specifically in perovskite titanates, is addressed in detail. Thermal conductivity is demonstrated to be a sensitive probe for defects in a system, where processing conditions play a significant role in modulating the crystallinity of the material. The perovskite titanate superlattice system of strontium titanate and calcium titanate is used beat alloy limit. It also shows interesting period thickness dependent thermal properties. The possible origin of this effect is briefly discussed and future directions for this research is also elaborated in detail.

  17. Effect of doping on amplitude modulation of space-charge wave in semiconductor quantum plasma

    NASA Astrophysics Data System (ADS)

    Banerjee, Sreyasi; Ghosh, Basudev

    2017-04-01

    To describe the modulational instability of space-charge waves in an n-type compensated semiconductor plasma, a nonlinear Schrödinger equation has been derived by using quantum hydrodynamical model and standard multiple scale perturbation technique. It has been shown that compensation factor (i.e. relative proportion of donor, acceptor and intrinsic carrier concentrations) and quantum diffraction parameter play important role in generating bright and dark envelope solitons within the semiconductor. Instability growth rate is also found to depend sensitively on the compensation factor and quantum diffraction parameter. From the linear dispersion relation it has been found that inclusion of quantum parameter gives rise to two new wave modes of purely quantum origin. Further the effect of compensation factor and quantum diffraction parameter on the linear dispersion characteristics has been analyzed. It has also been found that due to parabolicity of conduction band the group velocity of space-charge wave becomes dependent on compensation factor and quantum diffraction parameter.

  18. Strain mediated coupling in magnetron sputtered multiferroic PZT/Ni-Mn-In/Si thin film heterostructure

    SciTech Connect

    Singh, Kirandeep; Kaur, Davinder; Singh, Sushil Kumar

    2014-09-21

    The strain mediated electrical and magnetic properties were investigated in PZT/Ni-Mn-In heterostructure deposited on Si (100) by dc/rf magnetron sputtering. X-ray diffraction pattern revealed that (220) orientation of Ni-Mn-In facilitate the (110) oriented tertragonal phase growth of PZT layer in PZT/Ni-Mn-In heterostructure. A distinctive peak in dielectric constant versus temperature plots around martensitic phase transformation temperature of Ni-Mn-In showed a strain mediated coupling between Ni-Mn-In and PZT layers. The ferroelectric measurement taken at different temperatures exhibits a well saturated and temperature dependent P-E loops with a highest value of P{sub sat}~55 μC/cm² obtained during martensite-austenite transition temperature region of Ni-Mn-In. The stress induced by Ni-Mn-In layer on upper PZT film due to structural transformation from martensite to austenite resulted in temperature modulated Tunability of PZT/Ni-Mn-In heterostructure. A tunability of 42% was achieved at 290 K (structural transition region of Ni-Mn-In) in these heterostructures. I-V measurements taken at different temperatures indicated that ohmic conduction was the main conduction mechanism over a large electric field range in these heterostructures. Magnetic measurement revealed that heterostructure was ferromagnetic at room temperature with a saturation magnetization of ~123 emu/cm³. Such multiferroic heterostructures exhibits promising applications in various microelectromechanical systems.

  19. Thin-film metallic glass: an effective diffusion barrier for Se-doped AgSbTe2 thermoelectric modules

    NASA Astrophysics Data System (ADS)

    Yu, Chia-Chi; Wu, Hsin-Jay; Deng, Ping-Yuan; Agne, Matthias T.; Snyder, G. Jeffrey; Chu, Jinn P.

    2017-03-01

    The thermal stability of joints in thermoelectric (TE) modules, which are degraded during interdiffusion between the TE material and the contacting metal, needs to be addressed in order to utilize TE technology for competitive, sustainable energy applications. Herein, we deposit a 200 nm-thick Zr-based thin-film metallic glass (TFMG), which acts as an effective diffusion barrier layer with low electrical contact resistivity, on a high-zT Se-doped AgSbTe2 substrate. The reaction couples structured with TFMG/TE are annealed at 673 K for 8-360 hours and analyzed by electron microscopy. No observable IMCs (intermetallic compounds) are formed at the TFMG/TE interface, suggesting the effective inhibition of atomic diffusion that may be attributed to the grain-boundary-free structure of TFMG. The minor amount of Se acts as a tracer species, and a homogeneous Se-rich region is found nearing the TFMG/TE interface, which guarantees satisfactory bonding at the joint. The diffusion of Se, which has the smallest atomic volume of all the elements from the TE substrate, is found to follow Fick’s second law. The calculated diffusivity (D) of Se in TFMG falls in the range of D~10-20-10-23(m2/s), which is 106~107 and 1012~1013 times smaller than those of Ni [10-14-10-17(m2/s)] and Cu [10-8-10-11(m2/s)] in Bi2Te3, respectively.

  20. Final Report for Award DE-SC0005403. Improved Electrochemical Performance of Strained Lattice Electrolytes via Modulated Doping

    SciTech Connect

    Hertz, Joshua L.; Prasad, Ajay K.

    2015-09-06

    The enclosed document provides a final report to document the research performed at the University of Delaware under Grant DE-SC0005403: Improved Electrochemical Performance of Strained Lattice Electrolytes via Modulated Doping. The ultimate goal of this project was to learn how to systematically strain the inter-atomic distance in thin ceramic films and how to use this newfound control to improve the ease by which oxygen ions can conduct through the films. Increasing the ionic conductivity of ceramics holds the promise of drastic improvements in the performance of solid oxide fuel cells, chemical sensors, gas permeation membranes, and related devices. Before this work, the experimental evidence advocating for strain-based techniques was often controversial and poorly characterized. Enabling much of this work was a new method to quickly create a very wide range of ceramic nanostructures that was established during the first phase of the project. Following this initial phase, we created a variety of promising nanostructured epitaxial films and multilayers with systematic variations in lattice mismatch and dopant content. Over the course of the work, a positive effect of tensile atomic strain on the oxygen conductivity was conclusively found using a few different forms of samples and experimental techniques. The samples were built by sputtering, an industrially scalable technique, and thus the technological implementation of these results may be economically feasible. Still, two other results consistently achieved over multiple efforts in this work give pause. The first of these results was that very specific, pristine surfaces upon which to build the nanostructures were strictly required in order to achieve measurable results. The second of these results was that compressively strained films with concomitant reductions in oxygen conductivity are much easier to obtain relative to tensile-strained films with increased conductivity.

  1. Thin-film metallic glass: an effective diffusion barrier for Se-doped AgSbTe2 thermoelectric modules

    PubMed Central

    Yu, Chia-Chi; Wu, Hsin-jay; Deng, Ping-Yuan; Agne, Matthias T.; Snyder, G. Jeffrey; Chu, Jinn P.

    2017-01-01

    The thermal stability of joints in thermoelectric (TE) modules, which are degraded during interdiffusion between the TE material and the contacting metal, needs to be addressed in order to utilize TE technology for competitive, sustainable energy applications. Herein, we deposit a 200 nm-thick Zr-based thin-film metallic glass (TFMG), which acts as an effective diffusion barrier layer with low electrical contact resistivity, on a high-zT Se-doped AgSbTe2 substrate. The reaction couples structured with TFMG/TE are annealed at 673 K for 8–360 hours and analyzed by electron microscopy. No observable IMCs (intermetallic compounds) are formed at the TFMG/TE interface, suggesting the effective inhibition of atomic diffusion that may be attributed to the grain-boundary-free structure of TFMG. The minor amount of Se acts as a tracer species, and a homogeneous Se-rich region is found nearing the TFMG/TE interface, which guarantees satisfactory bonding at the joint. The diffusion of Se, which has the smallest atomic volume of all the elements from the TE substrate, is found to follow Fick’s second law. The calculated diffusivity (D) of Se in TFMG falls in the range of D~10−20–10−23(m2/s), which is 106~107 and 1012~1013 times smaller than those of Ni [10−14–10−17(m2/s)] and Cu [10−8–10−11(m2/s)] in Bi2Te3, respectively. PMID:28327655

  2. Zinc-oxide-based nanostructured materials for heterostructure solar cells

    SciTech Connect

    Bobkov, A. A.; Maximov, A. I.; Moshnikov, V. A. Somov, P. A.; Terukov, E. I.

    2015-10-15

    Results obtained in the deposition of nanostructured zinc-oxide layers by hydrothermal synthesis as the basic method are presented. The possibility of controlling the structure and morphology of the layers is demonstrated. The important role of the procedure employed to form the nucleating layer is noted. The faceted hexagonal nanoprisms obtained are promising for the fabrication of solar cells based on oxide heterostructures, and aluminum-doped zinc-oxide layers with petal morphology, for the deposition of an antireflection layer. The results are compatible and promising for application in flexible electronics.

  3. Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells

    PubMed Central

    2011-01-01

    Nonlinear charge transport parallel to the layers of p-modulation-doped GaInNAs/GaAs quantum wells (QWs) is studied both theoretically and experimentally. Experimental results show that at low temperature, T = 13 K, the presence of an applied electric field of about 6 kV/cm leads to the heating of the high mobility holes in the GaInNAs QWs, and their real-space transfer (RST) into the low-mobility GaAs barriers. This results in a negative differential mobility and self-generated oscillatory instabilities in the RST regime. We developed an analytical model based upon the coupled nonlinear dynamics of the real-space hole transfer and of the interface potential barrier controlled by space-charge in the doped GaAs layer. Our simulation results predict dc bias-dependent self-generated current oscillations with frequencies in the high microwave range. PMID:21711766

  4. Carbon-Nanotube-Confined Vertical Heterostructures with Asymmetric Contacts.

    PubMed

    Zhang, Jin; Zhang, Kenan; Xia, Bingyu; Wei, Yang; Li, Dongqi; Zhang, Ke; Zhang, Zhixing; Wu, Yang; Liu, Peng; Duan, Xidong; Xu, Yong; Duan, Wenhui; Fan, Shoushan; Jiang, Kaili

    2017-08-21

    Van der Waals (vdW) heterostructures have received intense attention for their efficient stacking methodology with 2D nanomaterials in vertical dimension. However, it is still a challenge to scale down the lateral size of vdW heterostructures to the nanometer and make proper contacts to achieve optimized performances. Here, a carbon-nanotube-confined vertical heterostructure (CCVH) is employed to address this challenge, in which 2D semiconductors are asymmetrically sandwiched by an individual metallic single-walled carbon nanotube (SWCNT) and a metal electrode. By using WSe2 and MoS2 , the CCVH can be made into p-type and n-type field effect transistors with high on/off ratios even when the channel length is 3.3 nm. A complementary inverter was further built with them, indicating their potential in logic circuits with a high integration level. Furthermore, the Fermi level of SWCNTs can be efficiently modulated by the gate voltage, making it competent for both electron and hole injection in the CCVHs. This unique property is shown by the transition of WSe2 CCVH from unipolar to bipolar, and the transition of WSe2 /MoS2 from p-n junction to n-n junction under proper source-drain biases and gate voltages. Therefore, the CCVH, as a member of 1D/2D mixed heterostructures, shows great potentials in future nanoelectronics and nano-optoelectronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Oxides Heterostructures for Nanoelectronics

    SciTech Connect

    C Dubourdieu; I Gelard; O Salicio; G Saint-Girons; B Vilquin; G Hollinger

    2011-12-31

    We summarise in this paper the work of two groups focusing on the synthesis and characterisation of functional oxide for nanoelectronic applications. In the first section, we discuss the growth by liquid-injection MOCVD of oxides heterostructures. Interface engineering for the minimisation of silicate formation during the growth of polycrystalline SrTiO{sub 3} on Si is first presented. It is realised via the change of reactant flow or chemical nature at the Si surface. We then report on the epitaxy on oxide substrates of manganites films and superlattices and on their magnetic and electrical properties. La{sub 0.7}Sr{sub 0.3}MnO{sub 3} and La{sub 0.8}MnO{sub 3-{delta}} as well as multiferroic hexagonal ReMnO{sub 3} manganites are considered. We show that the film thickness and related strain may be used to tune the properties. Finally, we demonstrate the growth of MgO nanowires by CVD at a moderate temperature of 600 C, using gold as a catalyst. In the second section, we discuss the growth of epitaxial oxide heterostructures by MBE. First, the direct epitaxy of SrTiO{sub 3} on Si is considered. Issues and control of the SrTiO{sub 3}/Si interface are discussed. An abrupt interface is achieved. We show that SrTiO{sub 3} on Si can be used as a buffer layer for the epitaxy of various perovskite oxides such as LaAlO{sub 3} or La{sub 0.7}Sr0.3MnO{sub 3}. La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films are ferromagnetic and metallic at room temperature. The epitaxial growth of complex oxides on Si wafers opens up the route to the integration of a wide variety of functionalities in nanoelectronics. Finally, we discuss the monolithic integration of III-V compounds such as InP on Si using epitaxial SrTiO{sub 3} buffer layers for the future integration of optics on Si.

  6. Optically Modulated High-Sensitivity Heterostructure Varactor

    DTIC Science & Technology

    2006-09-01

    controlled by the intensity of the optical radiation, offering the potential for applications in op- toelectronic mixing in monolithic microwave integrated ...circuit (MMIC) and RF circuits [10], given that the planar MSM structure allows them to be monolithically integrated into III–V technology. II...erostructure varactor capable of monolithic integration with III–V technology. The device demonstrates an excellent Cmax/Cmin ratio of up to 113 and

  7. Electric-field induced strain modulation of magnetization in Fe-Ga/Pb(Mg{sub 1/3}Nb{sub 2/3})-PbTiO{sub 3} magnetoelectric heterostructures

    SciTech Connect

    Zhang, Yue Wang, Zhiguang; Wang, Yaojin; Luo, Chengtao; Li, Jiefang; Viehland, Dwight

    2014-02-28

    Magnetostrictive Fe-Ga thin layers were deposited on 〈110〉-oriented Pb(Mg{sub 1/3}Nb{sub 2/3})-30%PbTiO{sub 3} (PMN-30%PT) substrates by pulsed laser deposition. The as-prepared heterostructures showed columnar arrays aligned in the out-of-plane direction. Transmission electron microscopy revealed nanocrystalline regions within the columnar arrays of the Fe-Ga film. The heterostructure exhibited a strong converse magnetoelectric coupling effect of up to 4.55 × 10{sup −7} s m{sup −1}, as well as an electric field tunability of the in-plane magnetic anisotropy. Furthermore, the remanent magnetization states of the Fe-Ga films can be reversibly and irreversibly changed by external electric fields, suggesting a promising and robust application in magnetic random access memories and spintronics.

  8. Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs

    SciTech Connect

    Picraux, Samuel T; Dayeh, Shadi A

    2010-01-01

    Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure nanowires with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these nanowires for high-on currents and suppressed ambipolar behavior. Initial prototype devices resulted in a current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. These results demonstrate the potential of such asymmetric heterostructures (both in the semiconductor channel and metal-semiconductor barrier heights) for low-power and high performance electronics.

  9. Rectifying characteristics of La1-xSrxMnO3/TiO2 (x=0.2,0.15,0.04) heterostructures

    NASA Astrophysics Data System (ADS)

    Li, Tong; Zhang, Ming; Song, Xuemei; Wang, Bo; Yan, Hui

    2006-09-01

    La1-xSrxMnO3 (LSMO)/TiO2 heterostructures have been synthesized by the rf magnetron sputtering and exhibit excellent rectifying properties. The diffusion potentials increase with increasing Sr concentration and decrease with the increase of temperature, which is attributed to modulating the interfacial electronic structure of La1-xSrxMnO3/TiO2 heterostructure while changing temperatures. It is worth noting that the metal-insulator (M-I) transition of LSMO can also be observed in heterostructures and the increased sheet resistance of heterostructures at low temperatures is related to the introduction of TiO2.

  10. Franckeite as a naturally occurring van der Waals heterostructure

    PubMed Central

    Molina-Mendoza, Aday J.; Giovanelli, Emerson; Paz, Wendel S.; Niño, Miguel Angel; Island, Joshua O.; Evangeli, Charalambos; Aballe, Lucía; Foerster, Michael; van der Zant, Herre S. J.; Rubio-Bollinger, Gabino; Agraït, Nicolás; Palacios, J. J.; Pérez, Emilio M.; Castellanos-Gomez, Andres

    2017-01-01

    The fabrication of van der Waals heterostructures, artificial materials assembled by individual stacking of 2D layers, is among the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods, which are cumbersome and tend to suffer from poor control over the lattice orientations and the presence of unwanted interlayer adsorbates. Here, we present a different approach to fabricate ultrathin heterostructures by exfoliation of bulk franckeite which is a naturally occurring and air stable van der Waals heterostructure (composed of alternating SnS2-like and PbS-like layers stacked on top of each other). Presenting both an attractive narrow bandgap (<0.7 eV) and p-type doping, we find that the material can be exfoliated both mechanically and chemically down to few-layer thicknesses. We present extensive theoretical and experimental characterizations of the material's electronic properties and crystal structure, and explore applications for near-infrared photodetectors. PMID:28194037

  11. Franckeite as a naturally occurring van der Waals heterostructure.

    PubMed

    Molina-Mendoza, Aday J; Giovanelli, Emerson; Paz, Wendel S; Niño, Miguel Angel; Island, Joshua O; Evangeli, Charalambos; Aballe, Lucía; Foerster, Michael; van der Zant, Herre S J; Rubio-Bollinger, Gabino; Agraït, Nicolás; Palacios, J J; Pérez, Emilio M; Castellanos-Gomez, Andres

    2017-02-13

    The fabrication of van der Waals heterostructures, artificial materials assembled by individual stacking of 2D layers, is among the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods, which are cumbersome and tend to suffer from poor control over the lattice orientations and the presence of unwanted interlayer adsorbates. Here, we present a different approach to fabricate ultrathin heterostructures by exfoliation of bulk franckeite which is a naturally occurring and air stable van der Waals heterostructure (composed of alternating SnS2-like and PbS-like layers stacked on top of each other). Presenting both an attractive narrow bandgap (<0.7 eV) and p-type doping, we find that the material can be exfoliated both mechanically and chemically down to few-layer thicknesses. We present extensive theoretical and experimental characterizations of the material's electronic properties and crystal structure, and explore applications for near-infrared photodetectors.

  12. Franckeite as a naturally occurring van der Waals heterostructure

    NASA Astrophysics Data System (ADS)

    Molina-Mendoza, Aday J.; Giovanelli, Emerson; Paz, Wendel S.; Niño, Miguel Angel; Island, Joshua O.; Evangeli, Charalambos; Aballe, Lucía; Foerster, Michael; van der Zant, Herre S. J.; Rubio-Bollinger, Gabino; Agraït, Nicolás; Palacios, J. J.; Pérez, Emilio M.; Castellanos-Gomez, Andres

    2017-02-01

    The fabrication of van der Waals heterostructures, artificial materials assembled by individual stacking of 2D layers, is among the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods, which are cumbersome and tend to suffer from poor control over the lattice orientations and the presence of unwanted interlayer adsorbates. Here, we present a different approach to fabricate ultrathin heterostructures by exfoliation of bulk franckeite which is a naturally occurring and air stable van der Waals heterostructure (composed of alternating SnS2-like and PbS-like layers stacked on top of each other). Presenting both an attractive narrow bandgap (<0.7 eV) and p-type doping, we find that the material can be exfoliated both mechanically and chemically down to few-layer thicknesses. We present extensive theoretical and experimental characterizations of the material's electronic properties and crystal structure, and explore applications for near-infrared photodetectors.

  13. Highly insulating ferromagnetic cobaltite heterostructures

    DOE PAGES

    Choi, Woo Seok; Kang, Kyeong Tae; Jeen, Hyoungjeen; ...

    2017-04-02

    Ferromagnetic insulators are rather rare but possess great technological potential in, for example, spintronics. Individual control of ferromagnetic properties and electronic transport provides a useful design concept of multifunctional oxide heterostructures. We studied the close correlation among the magnetism, atomic structure, and electronic structure of oxide heterostructures composed of the ferromagnetic perovskite LaCoO3 and the antiferromagnetic brownmillerite SrCoO2.5 epitaxial thin film layers. By reversing the stacking sequence of the two layers, we could individually modify the electric resistance and saturation magnetic moment. Lastly, the ferromagnetic insulating behavior in the heterostructures was understood in terms of the electronic reconstruction at themore » oxide surface/interfaces and crystalline quality of the constituent layers.« less

  14. Electronic properties of quasiperiodic heterostructures

    NASA Astrophysics Data System (ADS)

    Zárate, J. E.; Velasco, V. R.

    2002-01-01

    We study the electronic states of different GaAs-AlAs Fibonacci, Thue-Morse and Rudin-Shapiro quasiperiodic heterostructures grown along the [001] direction. We employ an empirical tight-binding Hamiltonian including spin-orbit coupling together with the surface Green-function matching method. We present results for different generations of the quasiperiodic heterostructures, formed by different building blocks. We compare these results with those of the constituent quantum wells and with those of heterostructures containing the same total number of GaAs and AlAs slabs after periodic repetition of the building blocks. The states in the energy regions near the conduction- and valence-band edges of GaAs do not exhibit any spectrum fragmentation. They show a strong localization of the local density of states in the GaAs layers, and they can be traced to the states of the isolated quantum wells.

  15. Methane-Sensing Performance Enhancement in Graphene Oxide/Mg:ZnO Heterostructure Devices

    NASA Astrophysics Data System (ADS)

    Sarkar, Argha; Maity, Santanu; Joseph, Aneesh M.; Chakraborty, S. K.; Thomas, Tiju

    2017-10-01

    Methane-sensing using reduced doped graphene oxide (rGO)/Mg:ZnO heterostructure devices is reported here. All samples are tested with CH4 in dry air ambient by a gas-analyzing set-up. Crystallinity of the sensing film is improved through annealing treatment (at 800°C). The active device area (i.e., the rGO and rGO/Mg:ZnO heterostructures) are characterized using scanning electron microscope imaging, x-ray diffraction, and x-ray spectroscopy measurements. Electrical performance of the fabricated device is optimized. rGO/Mg:ZnO heterostructures are substantially more sensitive and have better transient response than bare rGO-based sensor devices. All fundamental parameters such as sensitivity and response-recovery time are examined and reported in detail.

  16. High power dissipative soliton in an Erbium-doped fiber laser mode-locked with a high modulation depth saturable absorber mirror.

    PubMed

    Cabasse, A; Martel, G; Oudar, J L

    2009-06-08

    We report on a passively mode-locked erbium-doped fiber laser, using a high nonlinear modulation depth saturable absorber mirror, in a Fabry-Perot cavity. A segment of dispersion compensation fiber is added inside the cavity in order to build a high-positive dispersion regime. The setup produced highly chirped pulses with an energy of 1.8 nJ at a repetition rate of 33.5 MHz. Numerical simulations accurately reflect our experimental results and show that pulse-shaping in this laser could be interpreted as producing 'dissipative solitons'.

  17. Novel Excitonic Solar Cells in Phosphorene-TiO2 Heterostructures with Extraordinary Charge Separation Efficiency.

    PubMed

    Zhou, Liujiang; Zhang, Jin; Zhuo, Zhiwen; Kou, Liangzhi; Ma, Wei; Shao, Bin; Du, Aijun; Meng, Sheng; Frauenheim, Thomas

    2016-05-19

    Constructing van der Waals heterostructures is an efficient approach to modulate the electronic structure, to advance the charge separation efficiency, and thus to optimize the optoelectronic property. Here, we theoretically investigated the phosphorene interfaced with TiO2(110) surface (1L-BP/TiO2) with a type-II band alignment, showing enhanced photoactivity. The 1L-BP/TiO2 excitonic solar cell (XSC) based on the 1L-BP/TiO2 exhibits large built-in potential and high power conversion efficiency (PCE), dozens of times higher than conventional solar cells, comparable to MoS2/WS2 XSC. The nonadiabatic molecular dynamics simulation shows the ultrafast electron transfer time of 6.1 fs, and slow electron-hole recombination of 0.58 ps, yielding >98% internal quantum efficiency for charge separation, further guaranteeing the practical PCE. Moreover, doping in phosphorene has a tunability on built-in potential, charge transfer, light absorbance, as well as electron dynamics, which greatly helps to optimize the optoelectronic efficiency of a XSC.

  18. Quantum anomalous Hall effect in magnetic insulator heterostructure.

    PubMed

    Xu, Gang; Wang, Jing; Felser, Claudia; Qi, Xiao-Liang; Zhang, Shou-Cheng

    2015-03-11

    On the basis of ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a nontrivial band gap up to 38 meV. The principle behind our prediction is that the band inversion between two topologically trivial ferromagnetic insulators can result in a nonzero Chern number, which offers a better way to realize the quantum anomalous Hall state without random magnetic doping. In addition, a simple effective model is presented to describe the basic mechanism of spin polarized band inversion in this system. Moreover, we predict that 3D quantum anomalous Hall insulator could be realized in (Bi2/3Cr1/3)2Te3 /GdI2 superlattice.

  19. The visible transmittance and solar modulation ability of VO2 flexible foils simultaneously improved by Ti doping: an optimization and first principle study.

    PubMed

    Chen, Shi; Dai, Lei; Liu, Jianjun; Gao, Yanfeng; Liu, Xinling; Chen, Zhang; Zhou, Jiadong; Cao, Chuanxiang; Han, Penggang; Luo, Hongjie; Kanahira, Minoru

    2013-10-28

    The Mott phase transition compound vanadium dioxide (VO2) shows promise as a thermochromic smart material for the improvement of energy efficiency and comfort in a number of applications. However, the use of VO2 has been restricted by its low visible transmittance (Tvis) and limited solar modulation ability (ΔTsol). Many efforts have been made to improve both of these limitations, but progress towards the optimization of one aspect has always come at the expense of the other. This paper reports that Ti doping results in the improvement of both the Tvis and ΔTsol of VO2-nanoparticle-derived flexible foils to the best levels yet reported. Compared with an undoped VO2 foil, a 15% increase (from 46.1% to 53%) in Tvis and a 28% increase (from 13.4% to 17.2%) in ΔTsol are achieved at a Ti doping level of 1.1%, representing the best performance reported for similar foils or films prepared using various methods. Only a defined doping level of less than 3% is beneficial for simultaneous improvement in Tvis and ΔTsol. First principle calculations suggest that an increase in the intrinsic band gap of VO2 (M) and the reduced electron density at Fermi level of VO2 (R) cooperate to result in the improvement of ΔTsol and that an enhancement in the optical band gap of VO2 (M) leads to the increase of Tvis.

  20. Electric field modulation of reversible and non-volatile magnetic anisotropy transition in (0 1 1) 0.7[Pb(Mg1/3Nb2/3)O3]-0.3[PbTi0.3O3]/FeSi heterostructures

    NASA Astrophysics Data System (ADS)

    Guo, Xiaobin; Cui, Baoshan; Guan, Chaoshuai; Li, Dong; Wu, Kai; Yun, Jijun; Wang, Tao; Peng, Yong; Zuo, Yalu; Xi, Li

    2017-08-01

    Electric-field-modulated magnetic properties are investigated on FeSi films with a (0 1 1) preferred orientation on (0 1 1) 0.7[Pb(Mg1/3Nb2/3)O3]-0.3[PbTi0.3O3] (PMN-0.3PT) single crystal substrates. When saturated and reversed coercive electric fields are alternately applied to the Pt/PMN-0.3PT/FeSi/Ta heterostructures, a reversible and non-volatile magnetic transition between four-fold and two-fold anisotropy is demonstrated by means of the angular dependence of remanent magnetization measurements. Based on the electric field control of the 90° magnetic easy axis direction transition of the FeSi film, we also achieve electric-field-mediated giant 180° magnetization switching with the assistance of the magnetic field pulse.

  1. Optimization of AlAs/AlGaAs quantum well heterostructures on on-axis and misoriented GaAs (111)B

    NASA Astrophysics Data System (ADS)

    Herzog, F.; Bichler, M.; Koblmüller, G.; Prabhu-Gaunkar, S.; Zhou, W.; Grayson, M.

    2012-05-01

    We report systematic growth optimization of high Al-content AlGaAs, AlAs, and associated modulation-doped quantum well (QW) heterostructures on on-axis and misoriented GaAs (111)B by molecular beam epitaxy. Growth temperatures TG > 690 °C and low As4 fluxes close to group III-rich growth significantly suppress twin defects in high-Al content AlGaAs on on-axis GaAs (111)B, as quantified by atomic force and transmission electron microscopy as well as x-ray diffraction. Mirror-smooth and defect-free AlAs with pronounced step-flow morphology was further achieved by growth on 2° misoriented GaAs (111)B toward [01¯1] and [21¯1¯] orientations. Successful fabrication of modulation-doped AlAs QW structures on these misoriented substrates yielded record electron mobilities (at 1.15 K) in excess of 13 000 cm2/Vs at sheet carrier densities of 5 × 1011 cm-2.

  2. Au@MoS2 Core-Shell Heterostructures with Strong Light-Matter Interactions.

    PubMed

    Li, Yuan; Cain, Jeffrey D; Hanson, Eve D; Murthy, Akshay A; Hao, Shiqiang; Shi, Fengyuan; Li, Qianqian; Wolverton, Chris; Chen, Xinqi; Dravid, Vinayak P

    2016-12-14

    There are emerging opportunities to harness diverse and complex geometric architectures based on nominal two-dimensional atomically layered structures. Herein we report synthesis and properties of a new core-shell heterostructure, termed Au@MoS2, where the Au nanoparticle is snugly and contiguously encapsulated by few shells of MoS2 atomic layers. The heterostructures were synthesized by direct growth of multilayer fullerene-like MoS2 shell on Au nanoparticle cores. The Au@MoS2 heterostructures exhibit interesting light-matter interactions due to the structural curvature of MoS2 shell and the plasmonic effect from the underlying Au nanoparticle core. We observed significantly enhanced Raman scattering and photoluminescence emission on these heterostructures. We attribute these enhancements to the surface plasmon-induced electric field, which simulations show to mainly localize within the MoS2 shell. We also found potential evidence for the charge transfer-induced doping effect on the MoS2 shell. The DFT calculations further reveal that the structural curvature of MoS2 shell results in a modification of its electronic structure, which may facilitate the charge transfer from MoS2 to Au. Such Au@MoS2 core-shell heterostructures have the potential for future optoelectronic devices, optical imaging, and other energy-environmental applications.

  3. Identification of selected in vitro generated phase-I metabolites of the steroidal selective androgen receptor modulator MK-0773 for doping control purposes.

    PubMed

    Lagojda, Andreas; Kuehne, Dirk; Krug, Oliver; Thomas, Andreas; Wigger, Tina; Karst, Uwe; Schänzer, Wilhelm; Thevis, Mario

    2016-01-01

    Research into developing anabolic agents for various therapeutic purposes has been pursued for decades. As the clinical utility of anabolic-androgenic steroids has been found to be limited because of their lack of tissue selectivity and associated off-target effects, alternative drug entities have been designed and are commonly referred to as selective androgen receptor modulators (SARMs). While most of these SARMs are of nonsteroidal structure, the drug candidate MK-0773 comprises a 4-aza-steroidal nucleus. Besides the intended therapeutic use, SARMs have been found to be illicitly distributed and misused as doping agents in sport, necessitating frequently updated doping control analytical assays. As steroidal compounds reportedly undergo considerable metabolic transformations, the phase-I metabolism of MK-0773 was simulated using human liver microsomal (HLM) preparations and electrochemical conversion. Subsequently, major metabolic products were identified and characterized employing liquid chromatography-high-resolution/high- accuracy tandem mass spectrometry with electrospray (ESI) and atmospheric pressure chemical ionization (APCI) as well as nuclear magnetic resonance (NMR) spectroscopy. MK-0773 produced numerous phase-I metabolites under the chosen in vitro incubation reactions, mostly resulting from mono- and bisoxygenation of the steroid. HLM yielded at least 10 monooxygenated species, while electrochemistry-based experiments resulted predominantly in three monohydroxylated metabolites. Elemental composition data and product ion mass spectra were generated for these analytes, ESI/APCI measurements corroborated the formation of at least two N-oxygenated metabolites, and NMR data obtained from electrochemistry-derived products supported structures suggested for three monohydroxylated compounds. Hereby, the hydroxylation of the A-ring located N- bound methyl group was found to be of particular intensity. In the absence of controlled elimination studies, the

  4. Characterization of equine urinary metabolites of selective androgen receptor modulators (SARMs) S1, S4 and S22 for doping control purposes.

    PubMed

    Hansson, Annelie; Knych, Heather; Stanley, Scott; Thevis, Mario; Bondesson, Ulf; Hedeland, Mikael

    2015-08-01

    Selective androgen receptor modulators, SARMs, constitute a class of compounds with anabolic properties but with few androgenic side-effects. This makes them possible substances of abuse and the World Anti-Doping Agency (WADA) has banned the entire class of substances. There have been several cases of illicit use of aryl propionamide SARMs in human sports and in 2013, 13 cases were reported. These substances have been found to be extensively metabolized in humans, making detection of metabolites necessary for doping control. SARMs are also of great interest to equine doping control, but the in vivo metabolite pattern and thus possible analytical targets have not been previously studied in this species. In this study, the urinary metabolites of the SARMs S1, S4, and S22 in horses were studied after intravenous injection, using ultra high performance liquid chromatography coupled to quadrupole time-of-flight mass spectrometry (UHPLC-QToF-MS). Eight different metabolites were found for SARM S1, nine for SARM S4, and seven for SARM S22. The equine urinary metabolite profiles differed significantly from those of humans. The parent compounds were only detected for SARMs S4 and S22 and only at the first sampling time point at 3 h post administration, making them unsuitable as target compounds. For all three SARMs tested, the metabolite yielding the highest response had undergone amide hydrolysis, hydroxylation and sulfonation. The resulting phase II metabolites (4-nitro-3-trifluoro-methyl-phenylamine sulfate for SARMs S1 and S4 and 4-cyano-3-trifluoro-methyl-phenylamine sulfate for SARM S22) are proposed as analytical targets for use in equine doping control.

  5. Morphology-modulation of SnO2 Hierarchical Architectures by Zn Doping for Glycol Gas Sensing and Photocatalytic Applications

    PubMed Central

    Zhao, Qinqin; Ju, Dianxing; Deng, Xiaolong; Huang, Jinzhao; Cao, Bingqiang; Xu, Xijin

    2015-01-01

    The morphology of SnO2 nanospheres was transformed into ultrathin nanosheets assembled architectures after Zn doping by one-step hydrothermal route. The as-prepared samples were characterized in detail by various analytical techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and nitrogen adsorption-desorption technique. The Zn-doped SnO2 nanostructures proved to be the efficient gas sensing materials for a series of flammable and explosive gases detection, and photocatalysts for the degradation of methyl orange (MO) under UV irradiation. It was observed that both of the undoped and Zn-doped SnO2 after calcination exhibited tremendous gas sensing performance toward glycol. The response (S = Ra/Rg) of Zn-doped SnO2 can reach to 90 when the glycol concentration is 100 ppm, which is about 2 times and 3 times higher than that of undoped SnO2 sensor with and without calcinations, respectively. The result of photocatalytic activities demonstrated that MO dye was almost completely degraded (~92%) by Zn-doped SnO2 in 150 min, which is higher than that of others (MO without photocatalyst was 23%, undoped SnO2 without and with calcination were 55% and 75%, respectively). PMID:25597269

  6. Assembly of quasicrystalline photonic heterostructures

    DOEpatents

    Grier, David G [New York, NY; Roichman, Yael [New York, NY; Man, Weining [Princeton, NJ; Chaikin, Paul Michael [Pennington, NJ; Steinhardt, Paul Joseph [Princeton, NJ

    2011-07-19

    A method and system for assembling a quasicrystalline heterostructure. A plurality of particles is provided with desirable predetermined character. The particles are suspended in a medium, and holographic optical traps are used to position the particles in a way to achieve an arrangement which provides a desired property.

  7. Assembly of quasicrystalline photonic heterostructures

    DOEpatents

    Grier, David G.; Roichman, Yael; Man, Weining; Chaikin, Paul Michael; Steinhardt, Paul Joseph

    2013-03-12

    A method and system for assembling a quasicrystalline heterostructure. A plurality of particles is provided with desirable predetermined character. The particles are suspended in a medium, and holographic optical traps are used to position the particles in a way to achieve an arrangement which provides a desired property.

  8. CNT-based saturable absorbers with scalable modulation depth for Thulium-doped fiber lasers operating at 1.9 μm

    NASA Astrophysics Data System (ADS)

    Sobon, Grzegorz; Duzynska, Anna; Świniarski, Michał; Judek, Jarosław; Sotor, Jarosław; Zdrojek, Mariusz

    2017-04-01

    In this work, we demonstrate a comprehensive study on the nonlinear parameters of carbon nanotube (CNT) saturable absorbers (SA) as a function of the nanotube film thickness. We have fabricated a set of four saturable absorbers with different CNT thickness, ranging from 50 to 200 nm. The CNTs were fabricated via a vacuum filtration technique and deposited on fiber connector end facets. Each SA was characterized in terms of nonlinear transmittance (i.e. optical modulation depth) and tested in a Thulium-doped fiber laser. We show, that increasing the thickness of the CNT layer significantly increases the modulation depth (up to 17.3% with 200 nm thick layer), which strongly influences the central wavelength of the laser, but moderately affects the pulse duration. It means, that choosing the SA with defined CNT thickness might be an efficient method for wavelength-tuning of the laser, without degrading the pulse duration. In our setup, the best performance in terms of bandwidth and pulse duration (8.5 nm and 501 fs, respectively) were obtained with 100 nm thick CNT layer. This is also, to our knowledge, the first demonstration of a fully polarization-maintaining mode-locked Tm-doped laser based on CNT saturable absorber.

  9. CNT-based saturable absorbers with scalable modulation depth for Thulium-doped fiber lasers operating at 1.9 μm

    PubMed Central

    Sobon, Grzegorz; Duzynska, Anna; Świniarski, Michał; Judek, Jarosław; Sotor, Jarosław; Zdrojek, Mariusz

    2017-01-01

    In this work, we demonstrate a comprehensive study on the nonlinear parameters of carbon nanotube (CNT) saturable absorbers (SA) as a function of the nanotube film thickness. We have fabricated a set of four saturable absorbers with different CNT thickness, ranging from 50 to 200 nm. The CNTs were fabricated via a vacuum filtration technique and deposited on fiber connector end facets. Each SA was characterized in terms of nonlinear transmittance (i.e. optical modulation depth) and tested in a Thulium-doped fiber laser. We show, that increasing the thickness of the CNT layer significantly increases the modulation depth (up to 17.3% with 200 nm thick layer), which strongly influences the central wavelength of the laser, but moderately affects the pulse duration. It means, that choosing the SA with defined CNT thickness might be an efficient method for wavelength-tuning of the laser, without degrading the pulse duration. In our setup, the best performance in terms of bandwidth and pulse duration (8.5 nm and 501 fs, respectively) were obtained with 100 nm thick CNT layer. This is also, to our knowledge, the first demonstration of a fully polarization-maintaining mode-locked Tm-doped laser based on CNT saturable absorber. PMID:28368014

  10. FAST TRACK COMMUNICATION: Modulated charged defects and conduction behaviour in doped BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Wang, Y.; Wang, J.

    2009-08-01

    The charged defective structure in Bi1-xLaxFeO3 (BLF) and La-10% and Mg-2% co-doped BiFeO3 (BLFM) thin films as well as their relations to leakage and dielectric relaxation behaviour are investigated. Through temperature-dependent conductivity and x-ray photoelectron spectroscopy analyses, it is demonstrated that La doping suppresses but Mg doping increases the concentration of both oxygen vacancies (OVs) and Fe2+ ions. Correspondingly, the leakage mechanism evolves from grain boundary and space charge limited conduction of BLF (x = 0.2 and 0.1) to Poole-Frenkel emission of BLFM and BiFeO3. Although the dielectric relaxation originates from the migration of OVs, the formation of defect complexes between the acceptors and OVs is responsible for the increased activation energy of the BLFM film.

  11. LETTER TO THE EDITOR: Efficient photocarrier injection in a transition metal oxide heterostructure

    NASA Astrophysics Data System (ADS)

    Muraoka, Y.; Yamauchi, T.; Ueda, Y.; Hiroi, Z.

    2002-12-01

    An efficient method for doping a transition metal oxide (TMO) with hole carriers is presented: photocarrier injection (PCI) in an oxide heterostructure. It is shown that an insulating vanadium dioxide (VO2) film is rendered metallic under light irradiation by PCI from an n-type titanium dioxide (TiO2) substrate doped with Nb. Consequently, a large photoconductivity, which is exceptional for TMOs, is found in the VO2/TiO2:Nb heterostructure. We propose an electronic band structure where photoinduced holes created in TiO2:Nb can be transferred into the filled V 3d band via the low-lying O 2p band of VO2.

  12. Blue light emission from the heterostructured ZnO/InGaN/GaN

    PubMed Central

    2013-01-01

    ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and a Si-doped InGaN layer. Current-voltage characteristic of the heterojunction indicated a diode-like rectification behavior. The electroluminescence spectra under forward biases presented a blue emission accompanied by a broad peak centered at 600 nm. With appropriate emission intensity ratio, the heterostructured LEDs had potential application in white LEDs. Moreover, a UV emission and an emission peak centered at 560 nm were observed under reverse bias. PMID:23433236

  13. Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis

    NASA Astrophysics Data System (ADS)

    Mukherjee, Moumita; Tripathy, P. R.; Pati, S. P.

    2015-06-01

    A full-scale, self-consistent, non-linear, large-signal model of double-drift hetero-structure IMPATT diode with general doping profile is derived. This newly developed model, for the first time, has been used to analyze the large-signal characteristics of hexagonal SiC-based double-drift IMPATT diode. Considering the fabrication feasibility, the authors have studied the large-signal characteristics of Si/SiC-based hetero-structure devices. Under small-voltage modulation (∼ 2%, i.e. small-signal conditions) results are in good agreement with calculations done using a linearised small-signal model. The large-signal values of the diode's negative conductance (5 × 106 S/m2), susceptance (10.4 × 107 S/m2), average breakdown voltage (207.6 V), and power generating efficiency (15%, RF power: 25.0 W at 94 GHz) are obtained as a function of oscillation amplitude (50% of DC breakdown voltage) for a fixed average current density. The large-signal calculations exhibit power and efficiency saturation for large-signal (> 50%) voltage modulation and thereafter decrease gradually with further increasing voltage-modulation. This generalized large-signal formulation is applicable for all types of IMPATT structures with distributed and narrow avalanche zones. The simulator is made more realistic by incorporating the space-charge effects, realistic field and temperature dependent material parameters in Si and SiC. The electric field snap-shots and the large-signal impedance and admittance of the diode with current excitation are expressed in closed loop form. This study will act as a guide for researchers to fabricate a high-power Si/SiC-based IMPATT for possible application in high-power MM-wave communication systems.

  14. Graphene/Si-nanowire heterostructure molecular sensors

    PubMed Central

    Kim, Jungkil; Oh, Si Duk; Kim, Ju Hwan; Shin, Dong Hee; Kim, Sung; Choi, Suk-Ho

    2014-01-01

    Wafer-scale graphene/Si-nanowire (Si-NW) array heterostructures for molecular sensing have been fabricated by vertically contacting single-layer graphene with high-density Si NWs. Graphene is grown in large scale by chemical vapour deposition and Si NWs are vertically aligned by metal-assisted chemical etching of Si wafer. Graphene plays a key role in preventing tips of vertical Si NWs from being bundled, thereby making Si NWs stand on Si wafer separately from each other under graphene, a critical structural feature for the uniform Schottky-type junction between Si NWs and graphene. The molecular sensors respond very sensitively to gas molecules by showing 37 and 1280% resistance changes within 3.5/0.15 and 12/0.15 s response/recovery times under O2 and H2 exposures in air, respectively, highest performances ever reported. These results together with the sensor responses in vacuum are discussed based on the surface-transfer doping mechanism. PMID:24947403

  15. Effect of strain on voltage-controlled magnetism in BiFeO₃-based heterostructures.

    PubMed

    Wang, J J; Hu, J M; Yang, T N; Feng, M; Zhang, J X; Chen, L Q; Nan, C W

    2014-04-01

    Voltage-modulated magnetism in magnetic/BiFeO3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO3-based heterostructures.

  16. Dynamic in situ visualization of voltage-driven magnetic domain evolution in multiferroic heterostructures.

    PubMed

    Gao, Ya; Hu, Jia-Mian; Wu, Liang; Nan, C W

    2015-12-23

    Voltage control of magnetism in multiferroic heterostructures provides a promising solution to the excessive heating in spintronic devices. Direct observation of voltage-modulated magnetic domain evolution dynamics is desirable for studying the mechanism of the voltage control of magnetism at mesoscale, but has remained challenging. Here we explored a characterization method for the dynamic in situ evolution of pure voltage modulated magnetic domains in the heterostructures by employing the scanning Kerr microscopy function in the magneto optic Kerr effect system. The local magnetization reorientation of a Ni/PMN-PT heterostructure were characterized under sweeping applied voltage on the PMN-PT single crystal, and the results show that the magnetization rotation angle in the local regions is much greater than that obtained from macroscopic magnetization hysteresis loops.

  17. Dynamic in situ visualization of voltage-driven magnetic domain evolution in multiferroic heterostructures

    NASA Astrophysics Data System (ADS)

    Gao, Ya; Hu, Jia-Mian; Wu, Liang; Nan, C. W.

    2015-12-01

    Voltage control of magnetism in multiferroic heterostructures provides a promising solution to the excessive heating in spintronic devices. Direct observation of voltage-modulated magnetic domain evolution dynamics is desirable for studying the mechanism of the voltage control of magnetism at mesoscale, but has remained challenging. Here we explored a characterization method for the dynamic in situ evolution of pure voltage modulated magnetic domains in the heterostructures by employing the scanning Kerr microscopy function in the magneto optic Kerr effect system. The local magnetization reorientation of a Ni/PMN-PT heterostructure were characterized under sweeping applied voltage on the PMN-PT single crystal, and the results show that the magnetization rotation angle in the local regions is much greater than that obtained from macroscopic magnetization hysteresis loops.

  18. Effect of strain on voltage-controlled magnetism in BiFeO3-based heterostructures

    PubMed Central

    Wang, J. J.; Hu, J. M.; Yang, T. N.; Feng, M.; Zhang, J. X.; Chen, L. Q.; Nan, C. W.

    2014-01-01

    Voltage-modulated magnetism in magnetic/BiFeO3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO3-based heterostructures. PMID:24686503

  19. Electric modulation of magnetization at the BaTiO3/La0.67Sr0.33MnO3 interfaces

    NASA Astrophysics Data System (ADS)

    Lu, H.; George, T. A.; Wang, Y.; Ketsman, I.; Burton, J. D.; Bark, C.-W.; Ryu, S.; Kim, D. J.; Wang, J.; Binek, C.; Dowben, P. A.; Sokolov, A.; Eom, C.-B.; Tsymbal, E. Y.; Gruverman, A.

    2012-06-01

    We report large (>10%) magnetization modulation by ferroelectric polarization reversal in the ferroelectric-ferromagnetic BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) heterostructures. We find that the electrically induced change in magnetization is limited to the BTO/LSMO interface but extends about 3 nm deep into the LSMO layer—far beyond the expected screening length of metallic LSMO. It is suggested that this effect is due to a metal-insulator transition occurring at the BTO/LSMO interface as a result of electrostatic doping.

  20. White electroluminescence of n-ZnO:Al/p-diamond heterostructure devices

    NASA Astrophysics Data System (ADS)

    Yang, Can; Wang, Xiao-Ping; Wang, Li-Jun; Pan, Xiu-Fang; Li, Song-Kun; Jing, Long-Wei

    2013-08-01

    An n-ZnO:Al/p-boron-doped diamond heterostructure electroluminescent device is produced, and a rectifying behavior can be observed. The electroluminescence spectrum at room temperature exhibits two visible bands centred at 450 nm-485 nm (blue emission) and 570 nm-640 nm (yellow emission). Light emission with a luminance of 15 cd/m2 is observed from the electroluminescent device at a forward applied voltage of 85 V, which is distinguished from white light by the naked eye.

  1. Power factor improvement and thermal conductivity reduction---By band engineering and modulation-doping in nanocomposites

    NASA Astrophysics Data System (ADS)

    Yu, Bo

    of this thesis, I will talk about how I applied the same technique to the Thalllium (Tl) doped Lead Telluride (PbTe) which was reported for an improved Seebeck coefficient due to the creation of resonant states near the Fermi level, leading to a high ZT of about 1.5 at around 500 °C. I showed that comparing with conventional tedious, energy consuming melting method, our fabrication process could produce such material with competing thermoelectric performance, but much simpler and more energy effective. Potential problems and perspectives for the future study are also discussed. The 4th chapter of my thesis deals with the challenge that in addition to those nanostructuring routes that mainly reduce the thermal conductivity to improve the performance, strategies to enhance the power factor (enhancing sigma or S or both) are also essential for the next generation of thermoelectric materials. In this part, modulation-doping which has been widely used in thin film semiconductor industry was studied in 3-D bulk thermoelectric nanocomposites to enhance the carrier mobility and therefore the electrical conductivity sigma. We proved in our study that by proper materials design, an improved power factor and a reduced thermal conductivity could be simultaneously obtained in the n-type SiGe nanocomposite material, which in turn gives an about 30% enhancement in the final ZT value. In order to further improve the materials performance or even apply this strategy to other materials systems, I also provided discussions at the end of chapter. In the last chapter, the structural and transport properties of a new thermoelectric compound Cu2Se was studied which was originally regarded as a superionic conductor. The beta-phase of such material possesses a natural superlattice-like structure, therefore resulting in a low lattice thermal conductivity of 0.4--0.5 Wm-1K-1 and a high peak ZT value of ˜1.6 at around 700 °C. I also studied the phase transition behavior between the cubic

  2. In vitro metabolism studies on the selective androgen receptor modulator (SARM) LG121071 and its implementation into human doping controls using liquid chromatography-mass spectrometry.

    PubMed

    Knoop, Andre; Krug, Oliver; Vincenti, Marco; Schänzer, Wilhelm; Thevis, Mario

    2015-01-01

    LG121071 is a member of the tetrahydroquinolinone-based class of selective androgen receptor modulator (SARM) drug candidates. These nonsteroidal compounds are supposed to act as full anabolic agents with reduced androgenic properties. As SARMs provide an alternative to anabolic androgenic steroids, they represent an emerging class of potential doping substances abused by athletes for illicit performance enhancement. According to the World Anti-Doping Agency's regulations, SARMs are banned substances and part of the Prohibited List since 2008. In consideration of the increasing number of adverse analytical findings in doping controls caused by SARMs abuse, potential drug candidates such as LG121071 have been proactively investigated to enable a timely integration into routine testing procedures even though clinical trials are not yet complete. In the present approach, the collision-induced dissociation (CID) of LG121071 was characterized by means of electrospray ionization-high resolution/high accuracy mass spectrometry, MS(n), and isotope labeling experiments. Interestingly, the even-electron precursor ion [M + H](+) at m/z 297 was found to produce a radical cation at m/z 268 under CID conditions, violating the even-electron rule that commonly applies. For doping control purposes, metabolites were generated in vitro and a detection method for urine samples based on liquid chromatography-tandem mass spectrometry was established. The overall metabolic conversion of LG121071 was modest, yielding primarily mono-, bis- and trishydroxylated species. Notable, however, was the identification of a glucuronic acid conjugate of the intact drug, attributed to an N-glucuronide structure. The sample preparation procedure included the enzymatic hydrolysis of glucuronides prior to liquid-liquid extraction, allowing intact LG121071 to be measured, as well as the corresponding phase-I metabolites. The method was characterized concerning inter alia lower limit of detection (0

  3. InGaAsGaAs pseudomorphic heterostructure transistors prepared by MOVPE

    NASA Astrophysics Data System (ADS)

    Liu, Wen-Chau; Laih, Lih-Wen; Tsai, Jung-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan

    1997-01-01

    In this paper, we will demonstrate two new InGaAs-GaAs pseudomorphic heterostructure transistors prepared by MOVPE technology, i.e. InGaAs-GaAs graded-concentration doping-channel MIS-like field effect transistors (FET) and heterostructure-emitter and heterostructure-base (InGaAs-GaAs) transistors (HEHBT). For the doping-channel MIS-like FET, the graded In 0.15Ga 0.85As doping-channel structure is employed as the active channel. For a 0.8 × 100 μm 2 gate device, a breakdown voltage of 15 V, a maximum transconductance of 200 mS/mm, and a maximum drain saturation current of 735 mA/mm are obtained. For the HEHBT, the confinement effect for holes is enhanced owing to the presence of GaAs/InGaAs/GaAs quantum wells. Thus, the emitter injection efficiency is increased and a high current gain can be obtained. Also, due to the lower surface recombination velocity of InGaAs base layers, the potential spike of the emitter-base (E-B) junction can be reduced significantly. This can provide a lower collector-emitter offset voltage. For an emitter area of 4.9 × 10 -5 cm 2, the common emitter current gain of 120 and the collector-emitter offset voltage of 100 mV are obtained.

  4. Enhanced monolayer MoS{sub 2}/InP heterostructure solar cells by graphene quantum dots

    SciTech Connect

    Wang, Peng; Lin, Shisheng Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang; Ding, Guqiao

    2016-04-18

    We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS{sub 2})/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS{sub 2}, which results in n-type doping of MoS{sub 2}. The doping effect increases the barrier height at the MoS{sub 2}/InP heterojunction, thus the averaged power conversion efficiency of MoS{sub 2}/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS{sub 2} based heterostructure solar cells.

  5. Interlayer Hybridization in van der Waals Heterostructures

    NASA Astrophysics Data System (ADS)

    Le, Nam; Tran, Huan; Woods, Lilia

    Van der Waals heterostructures composed of chemically inert dissimilar layers are of great interest for fundamental science and applications. The weak interplanar interactions and orbital overlap are expected to bring modifications to the constituent materials. By using first principles simulations, we investigate the properties of several heterostructures, including graphene/silicene, graphene/MoS2, and silicene/MoS2. The calculations reveal superlattice characteristic points in the Brillouin zone associated with the different stacking patterns. Band structures projected on each of the constituents show hybridization features related to specific orbital overlap for each heterostructure. Phonon dispersion spectra for the considered heterostructures are also investigated.

  6. Equally efficient interlayer exciton relaxation and improved absorption in epitaxial and nonepitaxial MoS2/WS2 heterostructures.

    PubMed

    Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Purezky, Alexander A; Geohegan, David B; Kim, Ki Wook; Zhang, Yong; Cao, Linyou

    2015-01-14

    Semiconductor heterostructures provide a powerful platform to engineer the dynamics of excitons for fundamental and applied interests. However, the functionality of conventional semiconductor heterostructures is often limited by inefficient charge transfer across interfaces due to the interfacial imperfection caused by lattice mismatch. Here we demonstrate that MoS(2)/WS(2) heterostructures consisting of monolayer MoS(2) and WS(2) stacked in the vertical direction can enable equally efficient interlayer exciton relaxation regardless the epitaxy and orientation of the stacking. This is manifested by a similar 2 orders of magnitude decrease of photoluminescence intensity in both epitaxial and nonepitaxial MoS(2)/WS(2) heterostructures. Both heterostructures also show similarly improved absorption beyond the simple superimposition of the absorptions of monolayer MoS(2) and WS(2). Our result indicates that 2D heterostructures bear significant implications for the development of photonic devices, in particular those requesting efficient exciton separation and strong light absorption, such as solar cells, photodetectors, modulators, and photocatalysts. It also suggests that the simple stacking of dissimilar 2D materials with random orientations is a viable strategy to fabricate complex functional 2D heterostructures, which would show similar optical functionality as the counterpart with perfect epitaxy.

  7. Bond orbital modelling of heterostructures

    SciTech Connect

    Ünlü, Hilmi

    2016-03-25

    We propose a non-orthogonal sp{sup 3} hybrid bond orbital model to determine the electronic properties of semiconductor heterostructures. The model considers the non-orthogonality of sp{sup 3} hybrid states of nearest neighboring adjacent atoms using the intra-atomic Coulomb interactions corrected Hartree-Fock atomic energies and metallic contribution to calculate the valence band width energies of group IV elemental and group III-V and II-VI compound semiconductors without any adjustable parameter.

  8. Charge transfer in crystalline germanium/monolayer MoS 2 heterostructures prepared by chemical vapor deposition

    SciTech Connect

    Lin, Yung-Chen; Bilgin, Ismail; Ahmed, Towfiq; Chen, Renjie; Pete, Doug; Kar, Swastik; Zhu, Jian-Xin; Gupta, Gautam; Mohite, Aditya; Yoo, Jinkyoung

    2016-09-21

    Heterostructuring provides novel opportunities for exploring emergent phenomena and applications by developing designed properties beyond those of homogeneous materials. Advances in nanoscience enable the preparation of heterostructures formed incommensurate materials. Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, are of particular interest due to their distinct physical characteristics. There have been recent changes in new research areas related to 2D/2D heterostructures. But, other heterostructures such as 2D/three-dimensional (3D) materials have not been thoroughly studied yet although the growth of 3D materials on 2D materials creating 2D/3D heterostructures with exceptional carrier transport properties has been reported. Here also we report a novel heterostructure composed of Ge and monolayer MoS2, prepared by chemical vapor deposition. A single crystalline Ge (110) thin film was grown on monolayer MoS2. The electrical characteristics of Ge and MoS2 in the Ge/MoS2 heterostructure were remarkably different from those of isolated Ge and MoS2. The field-effect conductivity type of the monolayer MoS2 is converted from n-type to p-type by growth of the Ge thin film on top of it. Undoped Ge on MoS2 is highly conducting. The observations can be explained by charge transfer in the heterostructure as opposed to chemical doping via the incorporation of impurities, based on our first-principles calculations.

  9. Charge transfer in crystalline germanium/monolayer MoS 2 heterostructures prepared by chemical vapor deposition

    DOE PAGES

    Lin, Yung-Chen; Bilgin, Ismail; Ahmed, Towfiq; ...

    2016-09-21

    Heterostructuring provides novel opportunities for exploring emergent phenomena and applications by developing designed properties beyond those of homogeneous materials. Advances in nanoscience enable the preparation of heterostructures formed incommensurate materials. Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, are of particular interest due to their distinct physical characteristics. There have been recent changes in new research areas related to 2D/2D heterostructures. But, other heterostructures such as 2D/three-dimensional (3D) materials have not been thoroughly studied yet although the growth of 3D materials on 2D materials creating 2D/3D heterostructures with exceptional carrier transport properties has been reported. Here also wemore » report a novel heterostructure composed of Ge and monolayer MoS2, prepared by chemical vapor deposition. A single crystalline Ge (110) thin film was grown on monolayer MoS2. The electrical characteristics of Ge and MoS2 in the Ge/MoS2 heterostructure were remarkably different from those of isolated Ge and MoS2. The field-effect conductivity type of the monolayer MoS2 is converted from n-type to p-type by growth of the Ge thin film on top of it. Undoped Ge on MoS2 is highly conducting. The observations can be explained by charge transfer in the heterostructure as opposed to chemical doping via the incorporation of impurities, based on our first-principles calculations.« less

  10. Photocatalytic enhancement of TiO2 by B and Zr co-doping and modulation of microstructure

    NASA Astrophysics Data System (ADS)

    Fu, Chengxin; Gong, Yinyan; Wu, Yitao; Liu, Jiaqi; Zhang, Zhen; Li, Can; Niu, Lengyuan

    2016-08-01

    Visible-light photodegradation test revealed that B and Zr co-doping can raise the photocatalytic ability of the undoped TiO2 by a fold. XRD crystallography and Raman phonon spectroscopy measurements suggest that the Zr4+ ions replace the Ti4+ ions while the B3+ ions occupy the interstitial sites, expanding the unit-cell volume and reducing crystallite size. The incorporation of interstitial boron dopants creates oxygen vacancies (Ovrad rad) and reduce Ti4+ to Ti3+ to form [Ovrad rad -Ti3+]+, which traps the carriers and prolongs carrier lifetime. Moreover, Zr4+ ions replace Ti4+ ions and form impurity levels, which could improve visible light response. The co-doped samples are benefited from both B interstitials and Zr substitutes.

  11. Modulating optical rectification, second and third harmonic generation of doped quantum dots: Interplay between hydrostatic pressure, temperature and noise

    NASA Astrophysics Data System (ADS)

    Ganguly, Jayanta; Saha, Surajit; Bera, Aindrila; Ghosh, Manas

    2016-10-01

    We examine the profiles of optical rectification (OR), second harmonic generation (SHG) and third harmonic generation (THG) of impurity doped QDs under the combined influence of hydrostatic pressure (HP) and temperature (T) in presence and absence of Gaussian white noise. Noise has been incorporated to the system additively and multiplicatively. In order to study the above nonlinear optical (NLO) properties the doped dot has been subjected to a polarized monochromatic electromagnetic field. Effect of application of noise is nicely reflected through alteration of peak shift (blue/red) and variation of peak height (increase/decrease) of above NLO properties as temperature and pressure are varied. All such changes again sensitively depends on mode of application (additive/multiplicative) of noise. The remarkable influence of interplay between noise strength and its mode of application on the said profiles has also been addressed. The findings illuminate fascinating role played by noise in tuning above NLO properties of doped QD system under the active presence of both hydrostatic pressure and temperature.

  12. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE PAGES

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; ...

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  13. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  14. Regulating Mid-infrared to Visible Fluorescence in Monodispersed Er3+-doped La2O2S (La2O2SO4) Nanocrystals by Phase Modulation

    NASA Astrophysics Data System (ADS)

    Pan, Qiwen; Yang, Dandan; Kang, Shiliang; Qiu, Jianrong; Dong, Guoping

    2016-11-01

    Rare earth doped mid-infrared (MIR) fluorescent sources have been widely investigated due to their various potential applications in the fields of communication, chemical detecting, medical surgery and so forth. However, with emission wavelength extended to MIR, multiphonon relaxation process that strongly quenched the MIR emission is one of the greatest challenges for such practical applications. In our design, we have described a controllable gas-aided annealing strategy to modulate the phase, crystal size, morphology and fluorescent performance of a material simultaneously. Uniform and monodispersed Er3+-doped La2O2S and La2O2SO4 nanocrystals with a similar lattice structure, crystallinity, diameter and morphology have been introduced to investigate the impact of multiphonon relaxation on luminescence performance. Detailed spectroscopic evolutions in the region of MIR, near-infrared (NIR), visible upconversion (UC) and their corresponding decay times provide insight investigation into the fluorescent mechanism caused by multiphonon relaxation. A possible energy transfer model has also been established. Our results present direct observation and mechanistic investigation of fluorescent evolution in multiphonon relaxation process, which is conductive to design MIR fluorescent materials in the future. To the best of our knowledge, it is the first investigation on MIR fluorescent performance of La2O2S nanocrystals, which may find various applications in many photoelectronic fields.

  15. Regulating Mid-infrared to Visible Fluorescence in Monodispersed Er3+-doped La2O2S (La2O2SO4) Nanocrystals by Phase Modulation

    PubMed Central

    Pan, Qiwen; Yang, Dandan; Kang, Shiliang; Qiu, Jianrong; Dong, Guoping

    2016-01-01

    Rare earth doped mid-infrared (MIR) fluorescent sources have been widely investigated due to their various potential applications in the fields of communication, chemical detecting, medical surgery and so forth. However, with emission wavelength extended to MIR, multiphonon relaxation process that strongly quenched the MIR emission is one of the greatest challenges for such practical applications. In our design, we have described a controllable gas-aided annealing strategy to modulate the phase, crystal size, morphology and fluorescent performance of a material simultaneously. Uniform and monodispersed Er3+-doped La2O2S and La2O2SO4 nanocrystals with a similar lattice structure, crystallinity, diameter and morphology have been introduced to investigate the impact of multiphonon relaxation on luminescence performance. Detailed spectroscopic evolutions in the region of MIR, near-infrared (NIR), visible upconversion (UC) and their corresponding decay times provide insight investigation into the fluorescent mechanism caused by multiphonon relaxation. A possible energy transfer model has also been established. Our results present direct observation and mechanistic investigation of fluorescent evolution in multiphonon relaxation process, which is conductive to design MIR fluorescent materials in the future. To the best of our knowledge, it is the first investigation on MIR fluorescent performance of La2O2S nanocrystals, which may find various applications in many photoelectronic fields. PMID:27845417

  16. Magnetooptical study of Zeeman effect in Mn modulation-doped InAs/InGaAs/InAlAs quantum well structures

    SciTech Connect

    Terent'ev, Ya. V.; Danilov, S. N.; Plank, H.; Loher, J.; Schuh, D.; Bougeard, D.; Weiss, D.; Ganichev, S. D.; Durnev, M. V.; Ivanov, S. V.; Tarasenko, S. A.; Rozhansky, I. V.; Yakovlev, D. R.

    2015-09-21

    We report on a magneto-photoluminescence (PL) study of Zeeman effect in Mn modulation-doped InAs/InGaAs/InAlAs quantum wells (QW). Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry, both lines split into two circularly polarized components. While temperature and magnetic field dependence of the splitting are well described by the Brillouin function, providing an evidence for exchange interaction with spin polarized manganese ions, the value of the splitting exceeds by two orders of magnitude the value of the giant Zeeman splitting estimated for the average Mn density in QW obtained by the secondary ion mass spectroscopy.

  17. Heterostructures of Topological Insulators and Superconductors

    NASA Astrophysics Data System (ADS)

    Lababidi, Mahmoud

    show that triplet pairing correlations are induced by spin-flip scattering at the interface. We verify that the interface spectrum at sub-gap energies is well described by the Fu-Kane model even for strongly coupled S and TI. These sub-gap modes are interface states with spectral weight penetrating well into the superconductor. We extract the phenomenological parameters of the phenomenological Fu-Kane model from our microscopic calculations, and find they are strongly renormalized from the bulk material parameters. Building upon such understanding of single TI-S interface, we move on to examine a TI surface in contact with two superconductors with a phase bias, namely a Josephson junction patterned on the TI surface and mediated by the helical metal. A short Josephson junction of this kind at a phase bias of pi is known to give rise to exotic quasiparticle excitations known as Majorana fermions with a linear dispersion, E ˜ k. Our self-consistent calculation of the Andreev bound states spectrum reveals, for the first time, a new regime with very different physics in these devices. We show that the subgap spectrum becomes nearly flat at zero energy when the chemical potential is sufficiently away from the Dirac point. The flat dispersion is well approximated by E ˜ k N, where N scales with the chemical potential. We find a similar linear-to-flat dispersion evolution also occurs for the subgap spectrum of a periodic superconducting proximity structure, such as a TI surface in contact with a striped superconductor. The systematic microscopic study of TI-S heterostructures helps interpret the data from ongoing experiments on these structures. The formalism developed also forms the basis for subsequent investigation of more complicated layered materials such as the periodic array of magnetically doped TI and S which is argued to give rise to an exotic topological superconductor known as Weyl superconductor.

  18. Strain and water effects on the electronic structure and chemical activity of in-plane graphene/silicene heterostructure

    NASA Astrophysics Data System (ADS)

    Kistanov, Andrey A.; Cai, Yongqing; Zhang, Yong-Wei; Dmitriev, Sergey V.; Zhou, Kun

    2017-03-01

    By using first-principles calculations, the electronic structure of planar and strained in-plane graphene/silicene heterostructure is studied. The heterostructure is found to be metallic in a strain range from  ‑7% (compression) to  +7% (tension). The effect of compressive/tensile strain on the chemical activity of the in-plane graphene/silicene heterostructure is examined by studying its interaction with the H2O molecule. It shows that compressive/tensile strain is able to increase the binding energy of H2O compared with the adsorption on a planar surface, and the charge transfer between the water molecule and the graphene/silicene sheet can be modulated by strain. Moreover, the presence of the boron-nitride (BN)-substrate significantly influences the chemical activity of the graphene/silicene heterostructure upon its interaction with the H2O molecule and may cause an increase/decrease of the charge transfer between the H2O molecule and the heterostructure. These findings provide insights into the modulation of electronic properties of the in-plane free-standing/substrate-supported graphene/silicene heterostructure, and render possible ways to control its electronic structure, carrier density and redox characteristics, which may be useful for its potential applications in nanoelectronics and gas sensors.

  19. Epitaxial Halide Perovskite Lateral Double Heterostructure.

    PubMed

    Wang, Yiping; Chen, Zhizhong; Deschler, Felix; Sun, Xin; Lu, Toh-Ming; Wertz, Esther A; Hu, Jia-Mian; Shi, Jian

    2017-03-28

    Epitaxial III-V semiconductor heterostructures are key components in modern microelectronics, electro-optics, and optoelectronics. With superior semiconducting properties, halide perovskite materials are rising as promising candidates for coherent heterostructure devices. In this report, spinodal decomposition is proposed and experimentally implemented to produce epitaxial double heterostructures in halide perovskite system. Pristine epitaxial mixed halide perovskites rods and films were synthesized via van der Waals epitaxy by chemical vapor deposition method. At room temperature, photon was applied as a knob to regulate the kinetics of spinodal decomposition and classic coarsening. By this approach, halide perovskite double heterostructures were created carrying epitaxial interfaces and outstanding optical properties. Reduced Fröhlich electron-phonon coupling was discovered in coherent halide double heterostructure, which is hypothetically attributed to the classic phonon confinement effect widely existing in III-V double heterostructures. As a proof-of-concept, our results suggest that halide perovskite-based epitaxial heterostructures may be promising for high-performance and low-cost optoelectronics, electro-optics, and microelectronics. Thus, ultimately, for practical device applications, it may be worthy to pursue these heterostructures via conventional vapor phase epitaxy approaches widely practised in III-V field.

  20. Reconstructions at the Interface in Complex Oxide Heterostructures with Strongly Correlated Electrons

    NASA Astrophysics Data System (ADS)

    Gray, Benjamin

    Strongly correlated oxides exhibit a rich spectrum of closely competing orders near the localized-itinerant Mott insulator transition leaving their ground states ripe with instabilities susceptible to small perturbations such as lattice distortions, variation in stoichiometry, magnetic and electric fields, etc. As the field of interfacial engineering has matured, these underlying instabilities in the electronic structure of correlated oxides continue to be leveraged to manipulate existing phases or search for emergent ones. The central theme is matching materials across the interface with disparate physical, chemical, electronic, or magnetic structure to harness interfacial reconstructions in the strongly coupled charge, spin, orbital, and lattice degrees of freedom. In this dissertation, we apply the above paradigm to cuprate-manganite and cuprate-titanate interfaces. We examine ultrathin YBa2Cu3O7/La 2/3Ca1/3MnO3 multilayers, where interfacial charge reconstruction modulates the distribution of charge carriers within the superconducting planes and thereby act as dials to tune through the cuprate doping phase diagram. The ultrathin nature of the cuprate layers allows the reconstructed states to be resolved free of a bulk admixture. The depleted carriers are observed to directly enter the CuO2 planes. With increasing LCMO thickness, magnetic correlations are introduced, and coupling between interfacial Cu and Mn develops. The reconstructions in spin and electronic degrees of freedom found in cuprate-manganite heterostructures are expected to completely mask all other competing interactions. To this end, SrTiO3 is incorporated as a spacer material in cuprate-titanate multilayers to reveal the role of dimensionality, interlayer coupling, and broken translational symmetry. At the unit cell limit, a decrease in carrier concentration is found that directly correlates with underdoping from lost charge reservoir layers at the interface, while increased STO layer thickness

  1. Silicon-based silicon–germanium–tin heterostructure photonics

    PubMed Central

    Soref, Richard

    2014-01-01

    The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components. PMID:24567479

  2. Silicon-based silicon-germanium-tin heterostructure photonics.

    PubMed

    Soref, Richard

    2014-03-28

    The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components.

  3. Band-gap modulation via gallium substitution in cerium doped gadolinium aluminum garnet using a mixed fuel combustion approach

    SciTech Connect

    Tyagi, Mohit; Pitale, Shreyas S.; Ghosh, Manoranjan; Shinde, Seema

    2014-04-24

    Cerium doped Gadolinium garnets (Gd{sub 3}Al{sub x}Ga{sub 5−x}O{sub 12} where 0≤x≤5) are synthesized via combustion synthesis using mixture of urea and glycine fuels. A 4h Post annealing at 1400 oC is found to be necessary for pure phase formation. Lattice spacing variation as a result of partial or total Ga substitution at Al site was mapped by X-ray diffraction. Photoluminescence emission of Ce shifts as a consequence of Ga substitution and therefore suggests a local re-adjustment of crystal field around activator site.

  4. The modulation on luminescence of Er3+-doped silicon-rich oxide films by the structure evolution of silicon nanoclusters

    PubMed Central

    2013-01-01

    A series of silicon-rich oxide (SRO) and erbium-doped SRO (SROEr) films imbedded with structural tunable silicon nanoclusters (Si NCs) have been fabricated using sputtering followed by post-annealing. The coalescence of Si NCs is found in the films with large Si excess. The energy transfer rate between Si NCs and Er3+ is enhanced, but the luminescence efficiencies of both Si NCs and Er3+ are reduced by the coalescent microstructures. Optimization of the microstructures of Si NCs is performed, and the preferential optical performance for both Si NCs and Er3+ could be achieved when Si NCs were separated in microstructures. PMID:23331713

  5. Periodic potentials in hybrid van der Waals heterostructures formed by supramolecular lattices on graphene

    NASA Astrophysics Data System (ADS)

    Gobbi, Marco; Bonacchi, Sara; Lian, Jian X.; Liu, Yi; Wang, Xiao-Ye; Stoeckel, Marc-Antoine; Squillaci, Marco A.; D'Avino, Gabriele; Narita, Akimitsu; Müllen, Klaus; Feng, Xinliang; Olivier, Yoann; Beljonne, David; Samorì, Paolo; Orgiu, Emanuele

    2017-03-01

    The rise of 2D materials made it possible to form heterostructures held together by weak interplanar van der Waals interactions. Within such van der Waals heterostructures, the occurrence of 2D periodic potentials significantly modifies the electronic structure of single sheets within the stack, therefore modulating the material properties. However, these periodic potentials are determined by the mechanical alignment of adjacent 2D materials, which is cumbersome and time-consuming. Here we show that programmable 1D periodic potentials extending over areas exceeding 104 nm2 and stable at ambient conditions arise when graphene is covered by a self-assembled supramolecular lattice. The amplitude and sign of the potential can be modified without altering its periodicity by employing photoreactive molecules or their reaction products. In this regard, the supramolecular lattice/graphene bilayer represents the hybrid analogue of fully inorganic van der Waals heterostructures, highlighting the rich prospects that molecular design offers to create ad hoc materials.

  6. Designed Synthesis of van der Waals Heterostructures: The Power of Kinetic Control.

    PubMed

    Alemayehu, Matti B; Falmbigl, Matthias; Ta, Kim; Ditto, Jeffrey; Medlin, Douglas L; Johnson, David C

    2015-12-14

    Selecting specific 2D building blocks and specific layering sequences of van der Waals heterostructures should allow the formation of new materials with designed properties for specific applications. Unfortunately, the synthetic ability to prepare such structures at will, especially in a manner that can be manufactured, does not exist. Herein, we report the targeted synthesis of new metal-semiconductor heterostructures using the modulated elemental-reactant technique to nucleate specific 2D building blocks, control their thickness, and avoid epitaxial structures with long-range order. The building blocks, VSe2 and GeSe2 , have different crystal structures, which inhibits cation intermixing. The precise control of this approach enabled us to synthesize heterostructures containing GeSe2 monolayers alternating with VSe2 structural units with specific sequences. The transport properties systematically change with nanoarchitecture and a charge-density wave-like transition is observed.

  7. Noise-modulated self-polarization effect of impurity doped quantum dots under simultaneous presence of hydrostatic pressure and temperature

    NASA Astrophysics Data System (ADS)

    Bera, Aindrila; Ghosh, Manas

    2017-10-01

    We explore the profiles of self-polarization effect (SPE) of doped GaAs QD under simultaneous presence of hydrostatic pressure (HP), temperature and in presence of noise. Noise term carries Gaussian white character and it has been administered to the system via two different pathways; additive and multiplicative. Profiles of SPE have been monitored as a function of HP, temperature and noise strength. Under a given condition of HP and temperature, noise marks its prominent signature on the SPE profile. However, the extent to which noise affects the SPE profile visibly depends on the noise strength and the pathway through which noise is introduced. As interesting observations we have found that SPE exhibits minimization at a pressure of ∼ 170 kbar in absence of noise and at ∼ 150 kbar when noise is present. Furthermore, in presence of multiplicative noise SPE exhibits a very faint decrease with increase in T up to T ∼ 420 K. However, beyond T ∼ 420 K, further increase in temperature causes abrupt fall of SPE in a highly sharp way. The findings highlight viable ways of tuning SPE of doped QD system through subtle interplay between HP, temperature and noise.

  8. Modulating nonlinear optical properties of impurity doped quantum dots via the interplay between anisotropy and Gaussian white noise

    NASA Astrophysics Data System (ADS)

    Sarkar, Sucharita; Ghosh, Arghya Pratim; Mandal, Arkajit; Ghosh, Manas

    2016-02-01

    The influence of anisotropy on various nonlinear optical (NLO) properties such as total optical absorption coefficient (TOAC), nonlinear optical rectification (NOR), second harmonic generation (SHG) and third harmonic generation (THG) of impurity doped quantum dots (QDs) have been investigated in presence and absence of noise. Noise has been applied to the system additively and multiplicatively. The impurity potential is modeled by a Gaussian function and the noise applied being Gaussian white noise. A perpendicular magnetic field emerges out as a confinement source and a static external electric field has been applied. Profiles of the optical properties have been monitored as a function of incident photon energy for different values of anisotropy. In this connection the role of mode of application of noise (additive/multiplicative) has also been analysed. The interplay between noise and anisotropy has been found to profoundly affect the NLO properties. The investigation reveals that there are only one or two anisotropy regimes (depending on the particular NLO property under consideration) where noise-induced enhancement of the NLO property can be realized. Thus, anisotropy appears to be the central parameter by which the noise-induced enhancement of NLO properties of doped QD systems can be tailored.

  9. Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness

    SciTech Connect

    Wang Cong; Jin Kuijuan; Zhao Ruiqiang; Lu Huibin; Guo Haizhong; Ge Chen; He Meng; Wang Can; Yang Guozhen

    2011-05-02

    One order larger photovoltage is obtained with critical thicknesses of La{sub 0.9}Sr{sub 0.1}MnO{sub 3} films in both kinds of heterostructures of La{sub 0.9}Sr{sub 0.1}MnO{sub 3}/SrTiO{sub 3} (0.8 wt % Nb-doped) and La{sub 0.9}Sr{sub 0.1}MnO{sub 3}/Si fabricated at various oxygen pressures. Our self-consistent calculation reveals that the critical thickness of the La{sub 0.9}Sr{sub 0.1}MnO{sub 3} film with the ultimate value of photovoltage is just the thickness of the depletion layer of La{sub 0.9}Sr{sub 0.1}MnO{sub 3} in both heterojunctions, respectively.

  10. Controlling mode instabilities at 628 W average output power in an Yb-doped rod-type fiber amplifier by active modulation of the pump power

    NASA Astrophysics Data System (ADS)

    Stihler, Christoph; Jauregui, Cesar; Otto, Hans-Jürgen; Limpert, Jens; Tünnermann, Andreas

    2017-02-01

    The phenomenon of transverse mode instabilities (TMI) is currently the most limiting effect for the scaling of the average output power of fiber laser systems with nearly diffraction-limited beam quality. Thus, it is of high interest to develop efficient mitigation strategies to further enhance the performance of fiber laser systems. By actively modulating the pump power of an Yb-doped rod-type fiber amplifier, it was possible to weaken the thermally-induced refractive index grating along the fiber and, thus, to mitigate TMI to a large extent. A significant advantage of this approach is that it can be easily integrated in any existing fiber-laser system since no further optical components are needed. A function generator connected to the pump diode driver was used to achieve the modulation. With this setup we were able to extract a fully stabilized beam at 1.5 times above the TMI threshold. Furthermore, a stabilization of the beam was still feasible at an average output power of 628 W, which is more than three times higher than the free-running TMI threshold of that particular fiber under identical conditions (e.g. seed power). This is the highest average output power reported from a single-channel rod-type fiber amplifier with a high-quality stabilized beam, to the best of our knowledge.

  11. OPENING ADDRESS: Heterostructures in Semiconductors

    NASA Astrophysics Data System (ADS)

    Grimmeiss, Hermann G.

    1996-01-01

    Good morning, Gentlemen! On behalf of the Nobel Foundation, I should like to welcome you to the Nobel Symposium on "Heterostructures in Semiconductors". It gives me great pleasure to see so many colleagues and old friends from all over the world in the audience and, in particular, to bid welcome to our Nobel laureates, Prof. Esaki and Prof. von Klitzing. In front of a different audience I would now commend the scientific and technological importance of heterostructures in semiconductors and emphatically emphasise that heterostructures, as an important contribution to microelectronics and, hence, information technology, have changed societies all over the world. I would also mention that information technology is one of the most important global key industries which covers a wide field of important areas each of which bears its own character. Ever since the invention of the transistor, we have witnessed a fantastic growth in semiconductor technology, leading to more complex functions and higher densities of devices. This development would hardly be possible without an increasing understanding of semiconductor materials and new concepts in material growth techniques which allow the fabrication of previously unknown semiconductor structures. But here and today I will not do it because it would mean to carry coals to Newcastle. I will therefore not remind you that heterostructures were already suggested and discussed in detail a long time before proper technologies were available for the fabrication of such structures. Now, heterostructures are a foundation in science and part of our everyday life. Though this is certainly true, it is nevertheless fair to say that not all properties of heterostructures are yet understood and that further technologies have to be developed before a still better understanding is obtained. The organisers therefore hope that this symposium will contribute not only to improving our understanding of heterostructures but also to opening new

  12. Enhanced thermoelectric properties in bulk nanowire heterostructure-based nanocomposites through minority carrier blocking.

    PubMed

    Yang, Haoran; Bahk, Je-Hyeong; Day, Tristan; Mohammed, Amr M S; Snyder, G Jeffrey; Shakouri, Ali; Wu, Yue

    2015-02-11

    To design superior thermoelectric materials the minority carrier blocking effect in which the unwanted bipolar transport is prevented by the interfacial energy barriers in the heterogeneous nanostructures has been theoretically proposed recently. The theory predicts an enhanced power factor and a reduced bipolar thermal conductivity for materials with a relatively low doping level, which could lead to an improvement in the thermoelectric figure of merit (ZT). Here we show the first experimental demonstration of the minority carrier blocking in lead telluride-silver telluride (PbTe-Ag2Te) nanowire heterostructure-based nanocomposites. The nanocomposites are made by sintering PbTe-Ag2Te nanowire heterostructures produced in a highly scalable solution-phase synthesis. Compared with Ag2Te nanowire-based nanocomposite produced in similar method, the PbTe-Ag2Te nanocomposite containing ∼5 atomic % PbTe exhibits enhanced Seebeck coefficient, reduced thermal conductivity, and ∼40% improved ZT, which can be well explained by the theoretical modeling based on the Boltzmann transport equations when energy barriers for both electrons and holes at the heterostructure interfaces are considered in the calculations. For this p-type PbTe-Ag2Te nanocomposite, the barriers for electrons, that is, minority carriers, are primarily responsible for the ZT enhancement. By extending this approach to other nanostructured systems, it represents a key step toward low-cost solution-processable nanomaterials without heavy doping level for high-performance thermoelectric energy harvesting.

  13. Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators.

    PubMed

    Yu, Hui; Pantouvaki, Marianna; Van Campenhout, Joris; Korn, Dietmar; Komorowska, Katarzyna; Dumon, Pieter; Li, Yanlu; Verheyen, Peter; Absil, Philippe; Alloatti, Luca; Hillerkuss, David; Leuthold, Juerg; Baets, Roel; Bogaerts, Wim

    2012-06-04

    Carrier-depletion based silicon modulators with lateral and interdigitated PN junctions are compared systematically on the same fabrication platform. The interdigitated diode is shown to outperform the lateral diode in achieving a low VπLπ of 0.62 V∙cm with comparable propagation loss at the expense of a higher depletion capacitance. The low VπLπ of the interdigitated PN junction is employed to demonstrate 10 Gbit/s modulation with 7.5 dB extinction ration from a 500 µm long device whose static insertion loss is 2.8 dB. In addition, up to 40 Gbit/s modulation is demonstrated for a 3 mm long device comprising a lateral diode and a co-designed traveling wave electrode.

  14. Ultrafast pulse generation from erbium-doped fiber laser modulated by hybrid organic-inorganic halide perovskites

    NASA Astrophysics Data System (ADS)

    Jiang, Guobao; Miao, Lili; Yi, Jun; Huang, Bin; Peng, Wei; Zou, Yanhong; Huang, Huihui; Hu, Wei; Zhao, Chujun; Wen, Shuangchun

    2017-04-01

    We report the nonlinear optical responses of organic-inorganic halide perovskite CH3NH3PbI3 and its application in ultrafast pulse generation from an erbium-doped fiber laser in the optical communication band. By adopting the Z-scan technique, the third-order nonlinear optical responses of the organic-inorganic halide perovskites have been characterized. An ultrafast optical pulse with a pulse width of 661 fs centered at a wavelength of 1555 nm has been delivered via the nonlinear optical material introduced into the fiber laser cavity. Our experimental results confirm that the organic-inorganic halide perovskite possesses obvious third-order nonlinear optical responses in the C-band window and manifests its application potential in nonlinear optoelectronic devices.

  15. Modulation effect of interlayer spacing on the superconductivity of electron-doped FeSe-based intercalates.

    PubMed

    Hayashi, Fumitaka; Lei, Hechang; Guo, Jiangang; Hosono, Hideo

    2015-04-06

    FeSe-based intercalates are regarded as promising candidates for high-critical temperature (Tc) superconductors. Here we present new Na- and Sr-intercalated FeSe superconductors with embedded linear diamines (H2N)CnH2n(NH2) (abbreviated as DA; n = 0, 2, 3, or 6) prepared using a low-temperature ammonothermal method to investigate the effect of interlayer spacing on the superconductivity of electron-doped FeSes. The embedded DA formed a monolayer or bilayer in the interlayer of FeSe. The interlayer spacing between nearest FeSe layers could be tuned from 0.87 to 1.14 nm without significant change in the Na/Sr content or the ratio of Fe to Se. Importantly, bilayer phases Na/ethylenediamine- and Sr/hydrazine-FeSe show improved structural stability compared to that of Na/NH3-FeSe. The series of Na- and Sr-intercalated FeSe samples exhibited nearly the same high Tc values of 41-46 and 34-38 K, respectively, irrespective of rather different interlayer spacing d. The peculiar insensitivity for both series can be ascribed to the negligible dispersions of bands along the c axis; i.e., Fermi surfaces are nearly two-dimensional when d is larger than a certain threshold value (dsat) of ∼0.9 nm. The Fermi surface shape is already optimal for Tc, and a larger d will not enhance Tc further. On the other hand, the difference in Tc between two series may be explained by the higher carrier doping level in Na/DA-FeSes compared to that in Sr/DA-FeSes, resulting in the increased density of states at the Fermi level and superconducting pairing strength.

  16. Electronic Properties of Heterostructures and Defects in Compound Semiconductors

    NASA Astrophysics Data System (ADS)

    Collins, Reuben Theodore

    This thesis deals with the electronic characteristics of semiconductor heterostructures and with the electrical properties of semiconductors which are used in the growth of heterostructures. Chapter 1 presents the background for the two techniques primarily used in the research described in this thesis: inelastic tunneling spectroscopy and deep -level transient spectroscopy. Chapter 2 describes electrical measurements which were made on heterostructures composed of the compound semiconductors AlAs and GaAs. The mechanisms for current transport perpendicular to one or more AlAs layers sandwiched between two degenerate GaAs layers were studied, with an emphasis on elastic and inelastic tunneling through the AlAs layers at low temperatures. Measurements on metalorganic chemical vapor deposition grown samples with a single, p-type AlAs barrier indicated that thermionic emission was the dominant mechanism for current transport over the barrier at room temperature. At low temperatures, leakage currents dominated if the AlAs layer was thicker, while tunneling currents were dominant in the samples with thinner AlAs barriers. Electron self-energy effects due to the coupling of electrons and optical phonons in the GaAs, and the inelastic-excitation of longitudinal optical phonons in the AlAs were observed in the low temperature tunneling currents. This was the first observation of these effects in the AlAs/GaAs system. There was a significant difference between samples with n-type or p-type AlAs barriers. A possible explanation for these differences based on band bending in the AlAs barriers is given. Negative resistance regions were observed in the I-V curves of samples with multiple AlAs layers, indicating the presence of resonant tunneling effects. Chapter 3 presents an investigation of the deep -level defect structure of the compound semiconductor CdTe using the technique of deep-level transient spectroscopy. Nominally undoped, Cu-doped and In-doped CdTe crystals were

  17. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    SciTech Connect

    Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Puretzky, Alexander A.; Geohegan, David B.; Kim, Ki Wook; Zhang, Yong; Cao, Linyou

    2014-12-03

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of the two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.

  18. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    DOE PAGES

    Yu, Yifei; Hu, Shi; Su, Liqin; ...

    2014-12-03

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of themore » two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.« less

  19. Current induced decomposition of Abrikosov vortices in p-n layered superconductors and heterostructures.

    PubMed

    Rakhmanov, A L; Savel'ev, Sergey; Kusmartsev, F V

    2008-11-07

    We describe the decomposition of Abrikosov vortices into decoupled pancake vortices in superconductors having both electron and hole charge carriers. We estimate the critical current of such a decomposition, at which a superconducting-normal state transition occurs, and find that it is very sensitive to the magnetic field and temperature. The effect can be observed in recently synthesized self-doped high-Tc layered superconductors with electrons and holes coexisting in different Cu-O planes and in artificial p-n superconductor heterostructures. The sensitivity of the critical current to a magnetic field may be used for sensors and detectors of a magnetic field, which can be built up from the superconductor heterostructures.

  20. Current Induced Decomposition of Abrikosov Vortices in p-n Layered Superconductors and Heterostructures

    NASA Astrophysics Data System (ADS)

    Rakhmanov, A. L.; Savel'Ev, Sergey; Kusmartsev, F. V.

    2008-11-01

    We describe the decomposition of Abrikosov vortices into decoupled pancake vortices in superconductors having both electron and hole charge carriers. We estimate the critical current of such a decomposition, at which a superconducting-normal state transition occurs, and find that it is very sensitive to the magnetic field and temperature. The effect can be observed in recently synthesized self-doped high-Tc layered superconductors with electrons and holes coexisting in different Cu-O planes and in artificial p-n superconductor heterostructures. The sensitivity of the critical current to a magnetic field may be used for sensors and detectors of a magnetic field, which can be built up from the superconductor heterostructures.

  1. Tuning the Schottky barrier in the arsenene/graphene van der Waals heterostructures by electric field

    NASA Astrophysics Data System (ADS)

    Li, Wei; Wang, Tian-Xing; Dai, Xian-Qi; Wang, Xiao-Long; Ma, Ya-Qiang; Chang, Shan-Shan; Tang, Ya-Nan

    2017-04-01

    Using density functional theory calculations, we investigate the electronic properties of arsenene/graphene van der Waals (vdW) heterostructures by applying external electric field perpendicular to the layers. It is demonstrated that weak vdW interactions dominate between arsenene and graphene with their intrinsic electronic properties preserved. We find that an n-type Schottky contact is formed at the arsenene/graphene interface with a Schottky barrier of 0.54 eV. Moreover, the vertical electric field can not only control the Schottky barrier height but also the Schottky contacts (n-type and p-type) and Ohmic contacts (n-type) at the interface. Tunable p-type doping in graphene is achieved under the negative electric field because electrons can transfer from the Dirac point of graphene to the conduction band of arsenene. The present study would open a new avenue for application of ultrathin arsenene/graphene heterostructures in future nano- and optoelectronics.

  2. Structural and electronic properties of two-dimensional stanene and graphene heterostructure.

    PubMed

    Wu, Liyuan; Lu, Pengfei; Bi, Jingyun; Yang, Chuanghua; Song, Yuxin; Guan, Pengfei; Wang, Shumin

    2016-12-01

    Structural and electronic properties of two-dimensional stanene and graphene heterostructure (Sn/G) are studied by using first-principles calculations. Various supercell models are constructed in order to reduce the strain induced by the lattice mismatch. The results show that stanene interacts overall weakly with graphene via van der Waals (vdW) interactions. Multiple phases of different crystalline orientation of stanene and graphene could coexist at room temperature. Moreover, interlayer interactions in stanene and graphene heterostructure can induce tunable band gaps at stanene's Dirac point, and weak p-type and n-type doping of stanene and graphene, respectively, generating a small amount of electron transfer from stanene to graphene. Interestingly, for model [Formula: see text] , there emerges a band gap about 34 meV overall the band structure, indicating it shows semiconductor feature.

  3. A method for large-scale synthesis of Al-doped TiO2 nanopowder using pulse-modulated induction thermal plasmas with time-controlled feedstock feeding

    NASA Astrophysics Data System (ADS)

    Kodama, Naoto; Tanaka, Yasunori; Kita, K.; Uesugi, Y.; Ishijima, T.; Watanabe, S.; Nakamura, K.

    2014-05-01

    A unique method of large-scale synthesis of Al-doped TiO2 nanopowder was developed, using 20 kW Ar-O2 pulse-modulated induction thermal plasmas (PMITP) with time-controlled feedstock feeding (TCFF). This PMITP-TCFF method is characterized by intermittent feedstock powder feeding synchronized with modulation of the power of the PMITP. The method enables heavy-load feeding of raw material powder to the thermal plasmas for complete evaporation. The nanopowder synthesized was analysed using different methods including field emission scanning electron microscopy, x-ray diffraction (XRD) spectroscopy, bright-field transmission electron microscopy (TEM), TEM/energy dispersive x-ray (EDX) mapping, x-ray photoelectron spectroscopy, and spectrophotometry. The results showed that Al-doped TiO2 nanopowder can be synthesized with mean diameters of 50-60 nm. The Al doping in TiO2 was confirmed from the constituent structure in the XRD spectra, the uniform presence of Al in the nanopowder in the TEM/EDX mapping, the chemical shift in the x-ray photoelectron spectra, and the absorption edge shift in the optical properties. The rate of production of the Al-doped TiO2 nanopowder was estimated as 400 g h-1.

  4. Photodiode-Like Behavior and Excellent Photoresponse of Vertical Si/Monolayer MoS2 Heterostructures

    PubMed Central

    Li, Yang; Xu, Cheng-Yan; Wang, Jia-Ying; Zhen, Liang

    2014-01-01

    Monolayer transition metal dichalcogenides (TMDs) and their van der Waals heterostructures have been experimentally and theoretically demonstrated as potential candidates for photovoltaic and optoelectronic devices due to the suitable bandgap and excellent light absorption. In this work, we report the observation of photodiode behavior in (both n- and p- type) silicon/monolayer MoS2 vertical heterostructures. The photocurrent and photoresponsivity of heterostructures photodiodes were dependent both on the incident light wavelength and power density, and the highest photoresponsivity of 7.2 A/W was achieved in n-Si/monolayer MoS2 vertical heterostructures photodiodes. Compared with n-Si/MoS2 heterostructures, the photoresponsivity of p-Si/MoS2 heterostructure was much lower. Kelvin probe microscope (KFM) results demonstrated the more efficient separation of photogenerated excitons in n-Si/MoS2 than that in p-Si/MoS2. Coupling KFM results with band alignments of (p-, n-) Si/MoS2 heterostructures, the origins of photodiode-like phenomena of p-Si/MoS2 and n-Si/MoS2 have been unveiled, that is intrinsic built-in electric field in p-n junction, and modulated barrier height and width at the interface in n-n junction. Our work may benefit to the deep understanding of the integration of two-dimensional materials with more conventional three-dimensional semiconductors, and then contribute to the developments in the area of van der Waals heterostructures. PMID:25424301

  5. EDITORIAL: Focus on Advanced Semiconductor Heterostructures for Optoelectronics

    NASA Astrophysics Data System (ADS)

    Amann, Markus C.; Capasso, Federico; Larsson, Anders; Pessa, Markus

    2009-12-01

    Semiconductor heterostructures are the basic materials underlying optoelectronic devices, particularly lasers and light-emitting diodes (LEDs). Made from various III-V-, II-VI-, SiGe- and other compound semiconductors, modern semiconductor devices are available for the generation, detection and modulation of light covering the entire ultra-violet to far-infrared spectral region. Recent approaches that introduced multilayer heterostructures tailored on the lower nanometre scale made possible artificial semiconductors with new properties, such as extended wavelength coverage, that enabled new applications. Together with ongoing progress on wide-gap semiconductors, the optical wavelengths accessible by semiconductor devices are steadily expanding towards the short-wavelength ultra-violet regime, as well as further into the far-infrared and terahertz spectral regions. It is the aim of this focus issue to present cutting-edge research topics on the most recent optoelectronic material and device developments in this field using advanced semiconductor heterostructures. Focus on Advanced Semiconductor Heterostructures for Optoelectronics Contents Theoretical and experimental investigations of the limits to the maximum output power of laser diodes H Wenzel, P Crump, A Pietrzak, X Wang, G Erbert and G Tränkle GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, F Guillot, G Pozzovivo, M Tchernycheva, A Lupu, L Vivien, P Crozat, E Warde, C Bougerol, S Schacham, G Strasser, G Bahir, E Monroy and F H Julien Bound-to-continuum terahertz quantum cascade laser with a single-quantum-well phonon extraction/injection stage Maria I Amanti, Giacomo Scalari, Romain Terazzi, Milan Fischer, Mattias Beck, Jérôme Faist, Alok Rudra, Pascal Gallo and Eli Kapon Structural and optical characteristics of GaN/ZnO coaxial nanotube heterostructure arrays for light-emitting device applications Young Joon Hong, Jong-Myeong Jeon, Miyoung

  6. Substrate co-doping modulates electronic metal-support interactions and significantly enhances single-atom catalysis.

    PubMed

    Shi, J L; Wu, J H; Zhao, X J; Xue, X L; Gao, Y F; Guo, Z X; Li, S F

    2016-11-24

    Transitional metal nanoparticles or atoms deposited on appropriate substrates can lead to highly economical, efficient, and selective catalysis. One of the greatest challenges is to control the electronic metal-support interactions (EMSI) between the supported metal atoms and the substrate so as to optimize their catalytic performance. Here, from first-principles calculations, we show that an otherwise inactive Pd single adatom on TiO2(110) can be tuned into a highly effective catalyst, e.g. for O2 adsorption and CO oxidation, by purposefully selected metal-nonmetal co-dopant pairs in the substrate. Such an effect is proved here to result unambiguously from a significantly enhanced EMSI. A nearly linear correlation is noted between the strength of the EMSI and the activation of the adsorbed O2 molecule, as well as the energy barrier for CO oxidation. Particularly, the enhanced EMSI shifts the frontier orbital of the deposited Pd atom upward and largely enhances the hybridization and charge transfer between the O2 molecule and the Pd atom. Upon co-doping, the activation barrier for CO oxidation on the Pd monomer is also reduced to a level comparable to that on the Pd dimer which was experimentally reported to be highly efficient for CO oxidation. The present findings provide new insights into the understanding of the EMSI in heterogeneous catalysis and can open new avenues to design and fabricate cost-effective single-atom-sized and/or nanometer-sized catalysts.

  7. Electronic Transport in Graphene Heterostructures

    NASA Astrophysics Data System (ADS)

    Young, Andrea F.; Kim, Philip

    2011-03-01

    The elementary excitations of monolayer graphene, which behave as massless Dirac particles, make it a fascinating venue in which to study relativistic quantum phenomena. One notable example is Klein tunneling, a phenomena in which electrons convert to holes to tunnel through a potential barrier. However, the omnipresence of charged impurities in substrate-supported samples keep the overall charge distribution nonuniform, obscuring much of this "Dirac" point physics in large samples. Using local gates, one can create tunable heterojunctions in graphene, isolating the contribution of small regions of the samples to transport. In this review, we give an overview of quantum transport theory and experiment on locally gated graphene heterostructures, with an emphasis on bipolar junctions.

  8. The effects of the magnitude of the modulation field on electroreflectance spectroscopy of undoped-n+ type doped GaAs

    NASA Astrophysics Data System (ADS)

    Wang, D. P.; Huang, K. M.; Shen, T. L.; Huang, K. F.; Huang, T. C.

    1998-01-01

    The electroreflectance (ER) spectra of an undoped-n+ type doped GaAs has been measured at various amplitudes of modulating fields (δF). Many Franz-Keldysh oscillations were observed above the band gap energy, thus enabling the electric field (F) in the undoped layer to be determined. The F is obtained by applying fast Fourier transformation to the ER spectra. When δF is small, the power spectrum can be clearly resolved into two peaks, which corresponds to heavy- and light-hole transitions. When δF is less than ˜1/8 of the built-in field (Fbi˜77 420 V/cm), the F deduced from the ER is almost independent of δF. However, when larger than this, F is increased with δF. Also, when δF is increased to larger than ˜1/8 of Fbi, a shoulder appears on the right side of the heavy-hole peak of the power spectrum. The separation between the main peak and the shoulder of the heavy-hole peak becomes wider as δF becomes larger.

  9. Aptameric Recognition-Modulated Electroactivity of Poly(4-Styrenesolfonic Acid)-Doped Polyaniline Films for Single-Shot Detection of Tetrodotoxin.

    PubMed

    Fomo, Gertrude; Waryo, Tesfaye T; Sunday, Christopher E; Baleg, Abd A; Baker, Priscilla G; Iwuoha, Emmanuel I

    2015-09-08

    The work being reported is the first electrochemical sensor for tetrodotoxin (TTX). It was developed on a glassy carbon electrodes (C) that was modified with poly(4-styrenesolfonic acid)-doped polyaniline film (PANI/PSSA). An amine-end functionalized TTX-binding aptamer, 5'-NH₂-AAAAATTTCACACGGGTGCCTCGGCTGTCC-3' (NH₂-Apt), was grafted via covalent glutaraldehyde (glu) cross-linking. The resulting aptasensor (C//PANI⁺/PSSA-glu-NH2-Apt) was interrogated by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) in sodium acetate buffer (NaOAc, pH 4.8) before and after 30 min incubation in standard TTX solutions. Both CV and EIS results confirmed that the binding of the analyte to the immobilized aptamer modulated the electrochemical properties of the sensor: particularly the charge transfer resistance (Rct) of the PANI⁺/PSSA film, which served as a signal reporter. Based on the Rct calibration curve of the TTX aptasensor, the values of the dynamic linear range (DLR), sensitivity and limit of detection (LOD) of the sensor were determined to be 0.23-1.07 ng·mL(-1) TTX, 134.88 ± 11.42 Ω·ng·mL(-1) and 0.199 ng·mL(-1), respectively. Further studies are being planned to improve the DLR as well as to evaluate selectivity and matrix effects in real samples.

  10. Aptameric Recognition-Modulated Electroactivity of Poly(4-Styrenesolfonic Acid)-Doped Polyaniline Films for Single-Shot Detection of Tetrodotoxin

    PubMed Central

    Fomo, Gertrude; Waryo, Tesfaye T.; Sunday, Christopher E.; Baleg, Abd A.; Baker, Priscilla G.; Iwuoha, Emmanuel I.

    2015-01-01

    The work being reported is the first electrochemical sensor for tetrodotoxin (TTX). It was developed on a glassy carbon electrodes (C) that was modified with poly(4-styrenesolfonic acid)-doped polyaniline film (PANI/PSSA). An amine-end functionalized TTX-binding aptamer, 5′-NH2-AAAAATTTCACACGGGTGCCTCGGCTGTCC-3′ (NH2-Apt), was grafted via covalent glutaraldehyde (glu) cross-linking. The resulting aptasensor (C//PANI+/PSSA-glu-NH2-Apt) was interrogated by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) in sodium acetate buffer (NaOAc, pH 4.8) before and after 30 min incubation in standard TTX solutions. Both CV and EIS results confirmed that the binding of the analyte to the immobilized aptamer modulated the electrochemical properties of the sensor: particularly the charge transfer resistance (Rct) of the PANI+/PSSA film, which served as a signal reporter. Based on the Rct calibration curve of the TTX aptasensor, the values of the dynamic linear range (DLR), sensitivity and limit of detection (LOD) of the sensor were determined to be 0.23–1.07 ng·mL−1 TTX, 134.88 ± 11.42 Ω·ng·mL−1 and 0.199 ng·mL−1, respectively. Further studies are being planned to improve the DLR as well as to evaluate selectivity and matrix effects in real samples. PMID:26370994

  11. Linewidth enhancement factor measurement based on FM-modulated optical injection: application to rare-earth-doped active medium

    NASA Astrophysics Data System (ADS)

    Thorette, Aurélien; Romanelli, Marco; Vallet, Marc

    2017-04-01

    A new method for measuring the linewidth enhancement factor of a laser is proposed. It is based on frequency-modulated optical injection, combined with dual-frequency laser operation. The linewidth enhancement factor {\\alpha} is deduced from the experimental data using a theoretical analysis based on a standard rate equation model. As the intracavity power is kept constant, the method allows to free the process from the thermal effects that are usually present in AM/FM techniques. Measurement of {\\alpha}=0.28$\\pm$0.04 in a diode-pumped Nd:YAG laser demonstrates that the method is well-suited for characterizing small values of {\\alpha}.

  12. Substrate co-doping modulates electronic metal–support interactions and significantly enhances single-atom catalysis

    SciTech Connect

    Shi, Jinlei; Wu, Jinghe; Zhao, Xingju; Xue, Xinlian; Gao, Yanfei; Guo, Zheng Xiao; Li, Shunfang

    2016-10-07

    Transitional metal nanoparticles or atoms deposited on appropriate substrates can lead to highly economical, efficient, and selective catalysis. One of the greatest challenges is to control the electronic metal–support interactions (EMSI) between the supported metal atoms and the substrate so as to optimize their catalytic performance. Here, from first-principles calculations, we show that an otherwise inactive Pd single adatom on TiO2(110) can be tuned into a highly effective catalyst, e.g. for O2 adsorption and CO oxidation, by purposefully selected metal–nonmetal co-dopant pairs in the substrate. Such an effect is proved here to result unambiguously from a significantly enhanced EMSI. A nearly linear correlation is noted between the strength of the EMSI and the activation of the adsorbed O2 molecule, as well as the energy barrier for CO oxidation. Particularly, the enhanced EMSI shifts the frontier orbital of the deposited Pd atom upward and largely enhances the hybridization and charge transfer between the O2 molecule and the Pd atom. Upon co-doping, the activation barrier for CO oxidation on the Pd monomer is also reduced to a level comparable to that on the Pd dimer which was experimentally reported to be highly efficient for CO oxidation. The present findings provide new insights into the understanding of the EMSI in heterogeneous catalysis and can open new avenues to design and fabricate cost-effective single-atom-sized and/or nanometer-sized catalysts.

  13. Substrate co-doping modulates electronic metal–support interactions and significantly enhances single-atom catalysis

    DOE PAGES

    Shi, Jinlei; Wu, Jinghe; Zhao, Xingju; ...

    2016-10-07

    Transitional metal nanoparticles or atoms deposited on appropriate substrates can lead to highly economical, efficient, and selective catalysis. One of the greatest challenges is to control the electronic metal–support interactions (EMSI) between the supported metal atoms and the substrate so as to optimize their catalytic performance. Here, from first-principles calculations, we show that an otherwise inactive Pd single adatom on TiO2(110) can be tuned into a highly effective catalyst, e.g. for O2 adsorption and CO oxidation, by purposefully selected metal–nonmetal co-dopant pairs in the substrate. Such an effect is proved here to result unambiguously from a significantly enhanced EMSI. Amore » nearly linear correlation is noted between the strength of the EMSI and the activation of the adsorbed O2 molecule, as well as the energy barrier for CO oxidation. Particularly, the enhanced EMSI shifts the frontier orbital of the deposited Pd atom upward and largely enhances the hybridization and charge transfer between the O2 molecule and the Pd atom. Upon co-doping, the activation barrier for CO oxidation on the Pd monomer is also reduced to a level comparable to that on the Pd dimer which was experimentally reported to be highly efficient for CO oxidation. The present findings provide new insights into the understanding of the EMSI in heterogeneous catalysis and can open new avenues to design and fabricate cost-effective single-atom-sized and/or nanometer-sized catalysts.« less

  14. Heterostructures for Increased Quantum Efficiency in Nitride LEDs

    SciTech Connect

    Davis, Robert F.

    2010-09-30

    Task 1. Development of an advanced LED simulator useful for the design of efficient nitride-based devices. Simulator will contain graphical interface software that can be used to specify the device structure, the material parameters, the operating conditions and the desired output results. Task 2. Theoretical and experimental investigations regarding the influence on the microstructure, defect concentration, mechanical stress and strain and IQE of controlled changes in the chemistry and process route of deposition of the buffer layer underlying the active region of nitride-based blue- and greenemitting LEDs. Task 3. Theoretical and experimental investigations regarding the influence on the physical properties including polarization and IQE of controlled changes in the geometry, chemistry, defect density, and microstructure of components in the active region of nitride-based blue- and green-emitting LEDs. Task 4. Theoretical and experimental investigations regarding the influence on IQE of novel heterostructure designs to funnel carriers into the active region for enhanced recombination efficiency and elimination of diffusion beyond this region. Task 5. Theoretical and experimental investigations regarding the influence of enhanced p-type doping on the chemical, electrical, and microstructural characteristics of the acceptor-doped layers, the hole injection levels at Ohmic contacts, the specific contact resistivity and the IQE of nitride-based blue- and green-emitting LEDs. Development and optical and electrical characterization of reflective Ohmic contacts to n- and p-type GaN films.

  15. High Speed Heterostructure Metal-Semiconductor-Metal Photodetectors

    NASA Astrophysics Data System (ADS)

    Cola, A.; Nabet, B.; Chen, X.; Quaranta, F.

    2005-01-01

    In this work we review the properties of a class of metal-semiconductor-metal photodetectors based on heterojunction structures. Particularly, an AlGaAs/GaAs device is detailed in which the absorption region is in the GaAs layer, and a two-dimensional electron gas is formed at the heterointerface due toδ-doping of the widegap material. This heterostructure metal-semiconductor-metal photodetector also contains an AlGaAs distributed Bragg reflector that forms a resonant cavity for detection at 850 nm. The beneficial effect of the two-dimensional electron gas in the GaAs absorption layer in terms of speed and sensitivity is demonstrated by comparing samples with and without doping in the AlGaAs layer. The design and the physical properties of the grown epitaxial structure are presented, together with the static and dynamic characteristics of the device in time domain. In particular, photocurrent spectra exhibit a 30 nm wide peak at 850 nm, and time response measurements give a bandwidth over 30 GHz. A combination of very low dark current and capacitance, fast response, wavelength selectivity, and compatibility with high electron mobility transistors makes this device suitable for a number of application areas, such as Gigabit and 10 Gigabit Ethernet, wavelength division multiplexing, remote sensing, and medical applications.

  16. Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures.

    PubMed

    Pierucci, Debora; Henck, Hugo; Avila, Jose; Balan, Adrian; Naylor, Carl H; Patriarche, Gilles; Dappe, Yannick J; Silly, Mathieu G; Sirotti, Fausto; Johnson, A T Charlie; Asensio, Maria C; Ouerghi, Abdelkarim

    2016-07-13

    Two-dimensional layered MoS2 shows great potential for nanoelectronic and optoelectronic devices due to its high photosensitivity, which is the result of its indirect to direct band gap transition when the bulk dimension is reduced to a single monolayer. Here, we present an exhaustive study of the band alignment and relativistic properties of a van der Waals heterostructure formed between single layers of MoS2 and graphene. A sharp, high-quality MoS2-graphene interface was obtained and characterized by micro-Raman spectroscopy, high-resolution X-ray photoemission spectroscopy (HRXPS), and scanning high-resolution transmission electron microscopy (STEM/HRTEM). Moreover, direct band structure determination of the MoS2/graphene van der Waals heterostructure monolayer was carried out using angle-resolved photoemission spectroscopy (ARPES), shedding light on essential features such as doping, Fermi velocity, hybridization, and band-offset of the low energy electronic dynamics found at the interface. We show that, close to the Fermi level, graphene exhibits a robust, almost perfect, gapless, and n-doped Dirac cone and no significant charge transfer doping is detected from MoS2 to graphene. However, modification of the graphene band structure occurs at rather larger binding energies, as the opening of several miniband-gaps is observed. These miniband-gaps resulting from the overlay of MoS2 and the graphene layer lattice impose a superperiodic potential.

  17. Improvements in MOCVD growth of Hg1-xCdxTe heterostructures for uncooled infrared photodetectors

    NASA Astrophysics Data System (ADS)

    Piotrowski, A.; Gawron, W.; Klos, K.; Pawluczyk, J.; Piotrowski, J.; Madejczyk, P.; Rogalski, A.

    2005-09-01

    We report here the recent progress at VIGO/MUT (Military University of Technology) MOCVD Laboratory in the growth of Hg1-xCdxTe multilayer heterostructures for various types of uncooled infrared devices. The detectors are optimized for any wavelength within 1-12 μm spectral range. Hg1-xCdxTe growth with interdiffused multilayer process (IMP) technique has been improved. The total flow of the carrier gas was optimized to improve lateral uniformity of the composition and doping. The parasitic transient stages between the CdTe and HgTe phases were reduced to reasonable minimum. As a result, we were able to grow layers with homogeneous composition and doping, characterized by steep interfaces. The additional benefits were improved morphology, reduced dislocation density, and minimized consumption of precursors. The other issues addressed in this work were growth of heavy As-doped low-x and heavy Idoped high-x materials. Special modification to IMP process has been applied for in-situ control of stoichiometry. To maintain low vacancy concentration, special growth finish procedure has been developed. No post-growth thermal anneal was necessary for device-quality material. The MOCVD grown heterostructures have been successfully used for advanced uncooled infrared photodetectors such as multiple heterojunction photodiodes, multicolor and specially shaped spectral response multiabsorber devices.

  18. Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures

    SciTech Connect

    Zhukavin, R. Kh. Kovalevsky, K. A.; Orlov, M. L.; Tsyplenkov, V. V.; Bekin, N. A.; Yablonskiy, A. N.; Yunin, P. A.; Pavlov, S. G.; Abrosimov, N. V.; Hübers, H.-W.; Radamson, H. H.; Shastin, V. N.

    2015-01-15

    The results of measurements of the total terahertz-range photoluminescence of Group-V donors (phosphorus, antimony, bismuth, arsenic) in bulk silicon and SiGe/Si heterostructures depending on the excitation intensity are presented. The signal of bulk silicon was also measured as a function of uniaxial stress. The results of measurement of the dependence of the spontaneous emission intensity on the uniaxial stress is in rather good agreement with theoretical calculations of the relaxation times of excited states of donors in bulk silicon. Comparative measurements of the spontaneous emission from various strained heterostructures showed that the photoluminescence signal is caused by donor-doped silicon regions.

  19. Experimental demonstration of efficient pulsed terahertz emission from a stacked GaAs/AlGaAs p-i-n-i heterostructure

    NASA Astrophysics Data System (ADS)

    Lisauskas, A.; Reklaitis, A.; Venckevičius, R.; Kašalynas, I.; Valušis, G.; Grigaliunaitė-Vonsevičienė, G.; Maestre, H.; Schmidt, J.; Blank, V.; Thomson, M. D.; Roskos, H. G.; Köhler, K.

    2011-02-01

    The pulsed optoelectronic terahertz emitter based on a δ-doped p-i-n-i GaAs/AlxGa1-xAs heterostructure, which was suggested by Reklaitis [Phys. Rev. B 77, 153309 (2008)], is investigated experimentally. It is shown that the heterostructure can serve as efficient antenna- and bias-free surface emitter. Its power exceeds the emission from InGaAs and InAs surfaces for optical excitation fluences below 0.7 μJ/cm2 at 82 MHz pulse repetition rate, respectively, 7 μJ/cm2 at 1 kHz, with potential for further improvement by carrier recombination management.

  20. Nitride heterostructure optimization by simulation

    NASA Astrophysics Data System (ADS)

    Rabinovich, O. I.; Legotin, S. A.; Didenko, S. I.

    2017-06-01

    In current paper nanoheterostructure optimization for LED and phototransistor usage is discussed. Special doping into quantum wells and barriers by Indium atoms was investigated. By simulation improved quantum sized active region was detected which increases quantum efficiency and sensitivity upto 10%. Photoluminescence spectral curve and Peak lambda of the InGaN/GaN nanoheterostructure with different Indium concentration across wafer were investigated.

  1. Mass spectrometric characterization of urinary metabolites of the selective androgen receptor modulator S-22 to identify potential targets for routine doping controls.

    PubMed

    Thevis, Mario; Thomas, Andreas; Möller, Ines; Geyer, Hans; Dalton, James T; Schänzer, Wilhelm

    2011-08-15

    Drugs that promote anabolic processes with limited undesirable effects are of considerable therapeutic interest; some notable examples include those for the treatment of cancer cachexia and muscle-wasting diseases. Anabolic properties are not only therapeutically beneficial to critically ill and debilitated patients, but are also desirable to athletes seeking artificial enhancements in endurance, strength and accelerated recovery. The use of anabolic agents in the clinical setting is being reconsidered with the emergence of a new class of drugs referred to as SARMs (selective androgen receptor modulators). SARMs have the potential to complement or even replace anabolic androgenic steroidal use with the benefit of a reduction of the undesirable side effects associated with steroid administration alone. Arylpropionamide-based SARMs such as andarine (S-4) and S-22 have shown promising therapeutic properties and have attracted the interest of elite and amateur athletes despite the absence of clinical approval, and evidence for trafficking and misuse in sport has been obtained by doping control authorities. In this communication, the elucidation of urinary metabolites of the SARM drug candidate S-22 is compared with earlier in vitro metabolism studies. Following oral administration of illicit S-22, urine samples were collected after 62 and 135 h and analyzed for the active drug and its major metabolic products. Liquid chromatography interfaced with high-resolution/high-accuracy (tandem) mass spectrometry was used to identify and/or confirm the predicted target analytes for sports drug testing purposes. S-22 was detected in both specimens accompanied by its glucuronic acid conjugate. This was the B-ring hydroxylated derivative of S-22 plus the corresponding glucuronide (with the phase-II metabolites being the more abundant analytes). In addition, the samples collected 62 h post-administration also contained the phase-I metabolite hydroxylated at the methyl residue (C-20

  2. In situ electrodeposition of a Cu₂O/SnO₂ periodical heterostructure film for photosensor applications.

    PubMed

    Cui, Guangliang; Xiao, Chuanhai; Zhang, Pinhua; Zhang, Mingzhe

    2016-04-28

    Heterostructure materials with a strictly periodic arrangement in hundreds of microns based on tunneling modulation are ideal candidates for micro-nanodevice applications. In this paper, we propose a Cu2O/SnO2 periodical heterostructure film, which is prepared by electrochemical deposition in a quasi-2D ultra-thin liquid layer. The surface morphology and the component of the film were analyzed by scanning electron microscopy (SEM), scanning probe microscopy (SPM) and transmission electron microscopy (TEM). The influences of frequency and amplitude of periodic deposition potential on the morphology and regular distribution of the interface were studied. The photoresponsivity of this material was researched, and the response behaviors for different illumination conditions were recorded carefully. Based on the tunneling modulation mechanism, it exhibits reasonable photoresponsivity to UV light.

  3. Physics of SrTiO3-based heterostructures and nanostructures: a review.

    PubMed

    Pai, Yun-Yi; Tylan-Tyler, Anthony; Irvin, Patrick; Levy, Jeremy

    2017-08-30

    1 Overview 1 1.1 Introduction 1 1.1.1 Oxide growth techniques are rooted in search for high-Tc superconductors 2 1.1.2 First reports of interface conductivity 2 1.2 2D physics 2 1.3 Emergent properties of oxide heterostructures and nanostructures 3 1.4 Outline 3 2 Relevant properties of SrTiO3 3 2.1 Structural properties and transitions 3 2.2 Ferroelectricity, Paraelectricity and Quantum Paraelectricity 4 2.3 Electronic structure 5 2.4 Defects 6 2.4.1 Oxygen vacancies 6 2.4.2 Terraces 7 2.5 Superconductivity 7 3 SrTiO3-based heterostructures and nanostructures 8 3.1 Varieties of heterostructures 8 3.1.1 SrTiO3 only 9 3.1.2 LaAlO3/SrTiO3 9 3.1.3 Other heterostructures formed with SrTiO3 10 3.2 Thin-film growth 10 3.2.1 Substrates 10 3.2.2 SrTiO3 surface treatment 11 3.2.3 Pulsed Laser Deposition 11 3.2.4 Atomic Layer Deposition 13 3.2.5 Molecular Beam Epitaxy 14 3.2.6 Sputtering 15 3.3 Device Fabrication 15 3.3.1 "Conventional" photolithography - Thickness Modulation, hard masks, etc. 15 3.3.2 Ion beam irradiation 16 3.3.3 Conductive-AFM lithography 16 4 Properties and phase diagram of LaAlO3/SrTiO3 16 4.1 Insulating state 16 4.2 Conducting state 17 4.2.1 Confinement thickness (the depth profile of the 2DEG) 17 4.3 Metal-insulator transition and critical thickness 18 4.3.1 Polar catastrophe ( electronic reconstruction) 18 4.3.2 Oxygen Vacancies 19 4.3.3 Interdiffusion 20 4.3.4 Polar Interdiffusion + oxygen vacancies + antisite pairs 20 4.3.5 Role of surface adsorbates 21 4.3.6 Hidden FE like distortion - Strain induced instability 21 4.4 Structural properties and transitions 21 4.5 Electronic band structure 22 4.5.1 Theory 22 4.5.2 Experiment 23 4.5.3 Lifshitz transition 24 4.6 Defects, doping, and compensation 25 4.7 Magnetism

  4. Plasmonic ambient light sensing with MoS2-graphene heterostructures

    NASA Astrophysics Data System (ADS)

    Radoi, Antonio; Dragoman, Mircea; Dragoman, Daniela

    2017-01-01

    We present experimental results on plasmonic photodetection of ambient light using MoS2-graphene heterostructures illuminated with three very-low-power light emitting diodes (LEDs) radiating in blue, green, and red, respectively. The working principle of this photodetector validates the recent predictions of hot-carrier plasmonic doping of MoS2. The obtained responsivity for each spectral domain is in agreement with photopic standards of the luminosity function. The response time of the detector is less than the eye blinking time.

  5. Device Concepts Based on Spin-dependent Transmission in Semiconductor Heterostructures

    NASA Technical Reports Server (NTRS)

    Ting, David Z. - Y.; Cartoixa, X.

    2004-01-01

    We examine zero-magnetic-field spin-dependent transmission in nonmagnetic semiconductor heterostructures with structural inversion asymmetry (SIA) and bulk inversion asymmetry (BIA), and report spin devices concepts that exploit their properties. Our modeling results show that several design strategies could be used to achieve high spin filtering efficiencies. The current spin polarization of these devices is electrically controllable, and potentially amenable to highspeed spin modulation, and could be integrated in optoelectronic devices for added functionality.

  6. Device Concepts Based on Spin-dependent Transmission in Semiconductor Heterostructures

    NASA Technical Reports Server (NTRS)

    Ting, David Z. - Y.; Cartoixa, X.

    2004-01-01

    We examine zero-magnetic-field spin-dependent transmission in nonmagnetic semiconductor heterostructures with structural inversion asymmetry (SIA) and bulk inversion asymmetry (BIA), and report spin devices concepts that exploit their properties. Our modeling results show that several design strategies could be used to achieve high spin filtering efficiencies. The current spin polarization of these devices is electrically controllable, and potentially amenable to highspeed spin modulation, and could be integrated in optoelectronic devices for added functionality.

  7. Diagnostics of the fine spectrum of a quantum well in laser heterostructures using ultrasonic deformation

    SciTech Connect

    Kulakova, L A; Averkiev, Nikita S; Darinskii, A N; Yakhkind, E Z

    2013-05-31

    This paper describes a new acoustoelectronic effect in laser nanoheterostructures, which is caused by hole energy modulation and intermixing of hole wave functions in the quantum well of a laser structure in response to ultrasonic deformation. Experimental data are presented which indicate that the laser output intensity and polarisation direction vary periodically, with the acoustic wave period. Theoretical analysis of experimental data is used to assess parameters of the quantum well and the strain distribution in the heterostructure. (semiconductor lasers. physics and technology)

  8. Controllable Schottky barrier in GaSe/graphene heterostructure: the role of interface dipole

    NASA Astrophysics Data System (ADS)

    Si, Chen; Lin, Zuzhang; Zhou, Jian; Sun, Zhimei

    2017-03-01

    The discoveries of graphene and other related two-dimensional crystals have recently led to a new technology: van der Waals (vdW) heterostructures based on these atomically thin materials. Such a paradigm has been proved promising for a wide range of applications from nanoelectronics to optoelectronics and spintronics. Here, using first-principles calculations, we investigate the electronic structure and interface characteristics of a newly synthesized GaSe/graphene (GaSe/g) vdW heterostructure. We show that the intrinsic electronic properties of GaSe and graphene are both well preserved in the heterostructure, with a Schottky barrier formed at the GaSe/g interface. More interestingly, the band alignment between graphene and GaSe can be effectively modulated by tuning the interfacial distance or applying an external electric filed. This makes the Schottky barrier height (SBH) controllable, which is highly desirable in the electronic and optoelectronic devices based on vdW heterostructures. In particular, the tunability of the interface dipole and potential step is further uncovered to be the underlying mechanism that ensures this controllable tuning of SBH.

  9. Graphene oxide/graphene vertical heterostructure electrodes for highly efficient and flexible organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Jia, S.; Sun, H. D.; Du, J. H.; Zhang, Z. K.; Zhang, D. D.; Ma, L. P.; Chen, J. S.; Ma, D. G.; Cheng, H. M.; Ren, W. C.

    2016-05-01

    , and good compatibility with HIL materials (MoO3 in this work). Moreover, the conductivity of the heterostructure is not sacrificed compared to the pristine three-layer graphene electrodes, but is significantly higher than that of pristine two-layer graphene films. In addition to high flexibility, OLEDs with different emission colors based on the GO/G heterostructure TCEs show much better performance than those based on indium tin oxide (ITO) anodes. Green OLEDs with GO/G heterostructure electrodes have the maximum current efficiency and power efficiency, as high as 82.0 cd A-1 and 98.2 lm W-1, respectively, which are 36.7% (14.8%) and 59.2% (15.0%) higher than those with pristine graphene (ITO) anodes. These findings open up the possibility of using graphene for next generation high-performance flexible and wearable optoelectronics with high stability. Electronic supplementary information (ESI) available: XPS spectra, Raman spectra, sheet resistance and transmittance of graphene films with different numbers of layers and different ozone treatment times, doping effect of MoO3 on graphene and GO/G electrodes, performance of green OLEDs with different graphene anodes, a movie showing the flexibility of device. See DOI: 10.1039/c6nr01649a

  10. Colloidal nanorod heterostructures for photovoltaics and optoelectronics

    NASA Astrophysics Data System (ADS)

    Shim, Moonsub

    2017-05-01

    Colloidal quantum dots (QDs) synthesized in versatile, easy-to-process solutions are opening up exciting prospects in multiple areas, especially in biomedical imaging, photovoltaics, solid-state lighting and displays. The success of most of these prospects relies on high-quality heterostructures that improve optical properties. In particular, the core/shell heterostructure with a type I straddling band offset has been indispensable but the applicability is often limited to those exploiting only photoluminescence. QDs and their heterostructures can also be made with anisotropic shapes that allow access to essentially an unlimited number of combinations of size, shape and composition. Structures that allow enhancement of optical properties and physical accessibility for carrier injection/extraction simultaneously can open up new and exciting prospects in photovoltaics and optoelectronics. This topical review focuses on nanorod-based colloidal semiconductor heterostructures. Two-component, type II staggered band offset nanorod heterostructures capable of efficiently separating photoinduced charges are first discussed. Double heterojunction nanorods that contain three different phases are then considered with respect to their novelty and potential as emissive materials in light-emitting diodes. We conclude with an outlook on the possibility of developing colloidal nanorods that contain epitaxial interfaces beyond the conventional semiconductor heterojunctions.

  11. Magnetoelectric Coupling in Composite Multiferroic Heterostructures

    NASA Astrophysics Data System (ADS)

    Hoffman, Jason

    In this work, we demonstrate a large charge-mediated magnetoelectric coupling in a PbZr0.2Ti0.8O3 / La0.8 Sr0.2MnO3 (PZT/LSMO) composite structure resulting from direct control of magnetism via charge carrier density. This approach has the advantage that its physical mechanism is transparent and the size of the effect can be quantified and understood qualitatively within the double-exchange model. Direct quantification of the charge-driven magnetic changes based on electronic, magnetic, and spectroscopic measurements show that both the spin state and spin configuration of LSMO are modulated. Using a combination of advanced physical vapor deposition techniques, we have grown epitaxial PZT/LSMO bilayer heterostructures on (001) SrTiO 3 substrates with excellent crystallinity, atomically smooth surfaces, low leakage current density, and abrupt interfaces. Magneto-optic Kerr effect (MOKE) magnetometry was used to directly interrogate the local magnetic state of the LSMO as a function of the PZT polarization state. We show direct control of magnetism via applied electric fields, including modulation of the magnetotransport behavior and magnetic-ordering temperature, on/off switching of magnetism, and hysteretic magnetization versus electric field (M-E) characteristics. The magnetoelectric coupling strength, which relates the change in magnetization to the applied electric field, is found to vary strongly with temperature, reaching a low temperature saturation value of +6 Oe cm / kV, much larger than observed in single-phase magnetoelectrics and too large to be explained by a simple band-filling model. To clarify the origin of the magnetoelectric coupling, we carried out near edge x-ray absorption measurements that revealed a well defined change in the position of the Mn absorption edge with the ferroelectric polarization, giving a direct measure of the change in Mn valency in LSMO. We explain these results in terms of an interfacial magnetic reconstruction, whereby the

  12. Validation of a GC/MS method for the detection of two quinolinone-derived selective androgen receptor modulators in doping control analysis.

    PubMed

    Gerace, E; Salomone, A; Fasano, F; Costa, R; Boschi, D; Di Stilo, A; Vincenti, M

    2011-04-01

    Selective androgen receptor modulators (SARMs) represent an emerging class of drugs likely to be abused in sport. For clinical applications, these substances provide a promising alternative to testosterone-replacement therapies and their advantages include oral bioavailability, androgen receptor specificity, tissue selectivity, and the absence of steroid-related side effects. Although not yet commercially available, since January 2008 SARMs have been included on the prohibited list issued yearly by the World Anti-Doping Agency (WADA), so control laboratories need to update their procedures to detect either the parent drugs or their metabolites. Within this context, two quinolinone SARM models were synthesized and automatically characterized to update the existing routine screening procedures. The conditions for the new target analytes are compatible with the existing laboratory protocols used for both in-competition and out-of-competition controls and can be included in them. Validation parameters according to ISO 17025 and WADA guidelines were successfully determined. For analytical determinations, spiked urine samples were hydrolyzed and extracted at pH 9.6 with 10 mL of tert-butyl methyl ether. Then, the analytes were subsequently converted into trimethylsilyl derivatives and detected by gas chromatography-mass spectrometry. The absence of interferents, together with excellent repeatability of both retention times and the relative abundances of diagnostic ions, allowed proper identification of all SARM analytes. The analytes' quantification was linear up to 500 ng/mL and precision criteria were satisfied (coefficient of variation less than 25% at 10 ng/mL). The limits of detection were 1 ng/mL for both SARMs, whereas recovery values were between 95.5 and 99.3%. The validated method can be efficiently used for urine screening of the 2-quinolinone-derived SARMs tested.

  13. Two-step pH-modulated rapid assembly of trace-element-doped calcium-phosphate nanocrystals into giant porous beads in gelatin hydrosol for biomedical applications.

    PubMed

    Li, Zhicheng; Chen, Xiaoyi; Yang, Yongzhu; Yang, Xianyan; Zhang, Lei; Yang, Guojing; Tang, Ruikang; Gou, Zhongru

    2013-11-01

    Biomolecule-ion interactions that occur during changes in pH value are a crucial but poorly investigated area that underlies the aggregation of inorganic nanocrystals. Meanwhile, the disorderly growth of calcium phosphate (CaP) nanocrystals is an obstacle that limits its practical applications. Herein, we have demonstrated for the first time that a simple two-step pH-adjustment process for a gelatin hydrosol reaction medium can modulate the ordered self-assembly of trace-element-doped CaP nanocrystals into porous beads. Two methods are used to adjust the initial pH value of gelatin hydrosol: One is to firstly adjust the pH value to 3.0 and then to 4.0 with acid/base solutions, whilst the other is to directly adjust the pH value to 4.0 with acid. Spherical CaP porous beads are rapidly produced through the two-step pH-adjustment process, whereas the one-step pathway results in disorderly CaP aggregates. We believe that the introduction of additives for pH adjustment is the dominant factor in disturbing the electrokinetic parameters and for driving the self-assembly of nanocrystals, whereas the nucleation of CaP nanocrystals prior to assembly is caused by the relaxation/condensation of the polypeptide network, owing to the increase in pH value on the introduction of the basic calcium salt. This method is facile and rapid and these highly bioactive porous beads are particularly promising for use in hard-tissue repair, tissue engineering, and drug delivery. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Controlled Modification of Superconductivity in Epitaxial Atomic Layer-Organic Molecule Heterostructures.

    PubMed

    Yoshizawa, Shunsuke; Minamitani, Emi; Vijayaraghavan, Saranyan; Mishra, Puneet; Takagi, Yasumasa; Yokoyama, Toshihiko; Oba, Hiroaki; Nitta, Jun; Sakamoto, Kazuyuki; Watanabe, Satoshi; Nakayama, Tomonobu; Uchihashi, Takashi

    2017-04-12

    Self-assembled organic molecules can potentially be an excellent source of charge and spin for two-dimensional (2D) atomic-layer superconductors. Here we investigate 2D heterostructures based on In atomic layers epitaxially grown on Si and highly ordered metal-phthalocyanine (MPc, M = Mn, Cu) through a variety of techniques: scanning tunneling microscopy, electron transport measurements, angle-resolved photoemission spectroscopy, X-ray magnetic circular dichroism, and ab initio calculations. We demonstrate that the superconducting transition temperature (Tc) of the heterostructures can be modified in a controllable manner. Particularly, the substitution of the coordinated metal atoms from Mn to Cu is found to reverse the Tc shift from negative to positive directions. This distinctive behavior is attributed to a competition of charge and spin effects, the latter of which is governed by the directionality of the relevant d-orbitals. The present study shows the effectiveness of molecule-induced surface doping and the significance of microscopic understanding of the molecular states in these 2D heterostructures.

  15. Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure

    PubMed Central

    Sediri, Haikel; Pierucci, Debora; Hajlaoui, Mahdi; Henck, Hugo; Patriarche, Gilles; Dappe, Yannick J.; Yuan, Sheng; Toury, Bérangère; Belkhou, Rachid; Silly, Mathieu G.; Sirotti, Fausto; Boutchich, Mohamed; Ouerghi, Abdelkarim

    2015-01-01

    Stacking various two-dimensional atomic crystals is a feasible approach to creating unique multilayered van der Waals heterostructures with tailored properties. Herein for the first time, we present a controlled preparation of large-area h-BN/graphene heterostructures via a simple chemical deposition of h-BN layers on epitaxial graphene/SiC(0001). Van der Waals forces, which are responsible for the cohesion of the multilayer system, give rise to an abrupt interface without interdiffusion between graphene and h-BN, as shown by X-ray Photoemission Spectroscopy (XPS) and direct observation using scanning and High-Resolution Transmission Electron Microscopy (STEM/HRTEM). The electronic properties of graphene, such as the Dirac cone, remain intact and no significant charge transfer i.e. doping, is observed. These results are supported by Density Functional Theory (DFT) calculations. We demonstrate that the h-BN capped graphene allows the fabrication of vdW heterostructures without altering the electronic properties of graphene. PMID:26585245

  16. Spin Transport in Semiconductor heterostructures

    SciTech Connect

    Domnita Catalina Marinescu

    2011-02-22

    The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.

  17. Multilayer heterostructures and their manufacture

    SciTech Connect

    Hammond, Scott R; Reese, Matthew; Rupert, Benjamin; Miedaner, Alexander; Curtis, Clavin; Olson, Dana; Ginley, David S

    2015-11-04

    A method of synthesizing multilayer heterostructures including an inorganic oxide layer residing on a solid substrate is described. Exemplary embodiments include producing an inorganic oxide layer on a solid substrate by a liquid coating process under relatively mild conditions. The relatively mild conditions include temperatures below 225.degree. C. and pressures above 9.4 mb. In an exemplary embodiment, a solution of diethyl aluminum ethoxide in anhydrous diglyme is applied to a flexible solid substrate by slot-die coating at ambient atmospheric pressure, and the diglyme removed by evaporation. An AlO.sub.x layer is formed by subjecting material remaining on the solid substrate to a relatively mild oven temperature of approximately 150.degree. C. The resulting AlO.sub.x layer exhibits relatively high light transmittance and relatively low vapor transmission rates for water. An exemplary embodiment of a flexible solid substrate is polyethylene napthalate (PEN). The PEN is not substantially adversely affected by exposure to 150.degree. C

  18. EUO-Based Multifunctional Heterostructures

    DTIC Science & Technology

    2015-06-06

    other materials to enable novel effects and emerging device concepts to be explored. These included (1) achieving a drastic increase of the...magnetoresistance and the metal-insulator transition resistance ratios of doped EuO by interfacing this semiconductor with niobium; the observed effect is...general and may be applied to any metal/semiconductor interface where the semiconductor shows large Zeeman splitting under magnetic field, (2

  19. From gene engineering to gene modulation and manipulation: can we prevent or detect gene doping in sports?

    PubMed

    Fischetto, Giuseppe; Bermon, Stéphane

    2013-10-01

    During the last 2 decades, progress in deciphering the human gene map as well as the discovery of specific defective genes encoding particular proteins in some serious human diseases have resulted in attempts to treat sick patients with gene therapy. There has been considerable focus on human recombinant proteins which were gene-engineered and produced in vitro (insulin, growth hormone, insulin-like growth factor-1, erythropoietin). Unfortunately, these substances and methods also became improper tools for unscrupulous athletes. Biomedical research has focused on the possible direct insertion of gene material into the body, in order to replace some defective genes in vivo and/or to promote long-lasting endogenous synthesis of deficient proteins. Theoretically, diabetes, anaemia, muscular dystrophies, immune deficiency, cardiovascular diseases and numerous other illnesses could benefit from such innovative biomedical research, though much work remains to be done. Considering recent findings linking specific genotypes and physical performance, it is tempting to submit the young athletic population to genetic screening or, alternatively, to artificial gene expression modulation. Much research is already being conducted in order to achieve a safe transfer of genetic material to humans. This is of critical importance since uncontrolled production of the specifically coded protein, with serious secondary adverse effects (polycythaemia, acute cardiovascular problems, cancer, etc.), could occur. Other unpredictable reactions (immunogenicity of vectors or DNA-vector complex, autoimmune anaemia, production of wild genetic material) also remain possible at the individual level. Some new substances (myostatin blockers or anti-myostatin antibodies), although not gene material, might represent a useful and well-tolerated treatment to prevent progression of muscular dystrophies. Similarly, other molecules, in the roles of gene or metabolic activators [5-aminoimidazole-4

  20. A novel ultra steep dynamically reconfigurable electrostatically doped silicon nanowire Schottky Barrier FET

    NASA Astrophysics Data System (ADS)

    Singh, Sangeeta; Sinha, Ruchir; Kondekar, P. N.

    2016-05-01

    In this paper, an ultra steep, symmetric and dynamically configurable, electrostatically doped silicon nanowire Schottky FET (E-SiNW-SB-FET) based on dopant-free technology is investigated. It achieves the ultra steep sub-threshold slope (SS) due to the cumulative effect of weak impact-ionization induced positive feedback and electrostatic modulation of Schottky barrier heights at both source and drain terminals. It consists of axial nanowire heterostructure (silicide-intrinsic silicon-silicide) with three independent all-around gates, two gates are polarity control gates for dynamically reconfiguring the device polarity by modulating the effective Schottky barrier heights and a control gate switches the device ON and OFF. The most interesting features of the proposed structure are simplified fabrication process as the state-of-the-art for ion implantation and high thermal budget no more required for annealing. It is highly immune to process variations, doping control issues and random dopant fluctuations (RDF) and there are no mobility degradation issues related to high doping. A calibrated 3-D TCAD simulation results exhibit the SS of 2 mV/dec for n-type E-SiNW-SB-FET and 9 mV/dec for p-type E-SiNW-SB-FET for about five decades of current. Further, it resolves all the reliability related issues of IMOS as hot electron effects are no more limiting our device performance. It offers significant drive current of the order of 10-5-10-4 A and magnificently high ION/IOFF ratio of ∼108 along with the inherent advantages of symmetric device structure for its circuit realization.

  1. Atomic thin titania nanosheet-coupled reduced graphene oxide 2D heterostructures for enhanced photocatalytic activity and fast lithium storage

    NASA Astrophysics Data System (ADS)

    Li, Dong Jun; Huang, Zhegang; Hwang, Tae Hoon; Narayan, Rekha; Choi, Jang Wook; Kim, Sang Ouk

    2016-03-01

    Realizing practical high performance materials and devices using the properties of 2D materials is of key research interest in the materials science field. In particular, building well-defined heterostructures using more than two different 2D components in a rational way is highly desirable. In this paper, a 2D heterostructure consisting of atomic thin titania nanosheets densely grown on reduced graphene oxide surface is successfully prepared through incorporating polymer functionalized graphene oxide into the novel TiO2 nanosheets synthesis scheme. As a result of the synergistic combination of a highly accessible surface area and abundant interface, which can modulate the physicochemical properties, the resultant heterostructure can be used in high efficiency visible light photocatalysis as well as fast energy storage with a long lifecycle. [Figure not available: see fulltext.

  2. Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures

    SciTech Connect

    Yin, Yao; Sun, Huabin; Chen, Peng; Sang, Liwen; Dierre, Benjamin; Sumiya, Masatomo; Sekiguchi, Takashi; Zheng, Youdou; Shi, Yi

    2015-05-15

    The spatial distribution of indium composition in InGaN/GaN heterostructure is a critical topic for modulating the wavelength of light emitting diodes. In this letter, semi-polar InGaN/GaN heterostructure stripes were fabricated on patterned GaN/Sapphire substrates by epitaxial lateral overgrowth (ELO), and the spatial distribution of indium composition in the InGaN layer was characterized by using cathodoluminescence. It is found that the indium composition is mainly controlled by the diffusion behaviors of metal atoms (In and Ga) on the surface. The diffusivity of metal atoms decreases sharply as migrating to the region with a high density of dislocations and other defects, which influences the distribution of indium composition evidently. Our work is beneficial for the understanding of ELO process and the further development of InGaN/GaN heterostructure based devices.

  3. Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers

    NASA Astrophysics Data System (ADS)

    Sinha, Jaivardhan; Hayashi, Masamitsu; Kellock, Andrew J.; Fukami, Shunsuke; Yamanouchi, Michihiko; Sato, Hideo; Ikeda, Shoji; Mitani, Seiji; Yang, See-hun; Parkin, Stuart S. P.; Ohno, Hideo

    2013-06-01

    We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In particular, the saturation magnetization drops upon doping the Ta underlayer, suggesting that the doped underlayer acts as a boron diffusion barrier. In addition, the thickness of the magnetic dead layer decreases with increasing nitrogen doping. Surprisingly, the interface magnetic anisotropy increases to ˜1.8 erg/cm2 when an optimum amount of nitrogen is introduced into the Ta underlayer. These results show that nitrogen doped Ta serves as a good underlayer for spintronic applications including magnetic tunnel junctions and domain wall devices.

  4. Wafer bonded epitaxial templates for silicon heterostructures

    DOEpatents

    Atwater, Jr., Harry A.; Zahler, James M.; Morral, Anna Fontcubera I

    2008-03-11

    A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

  5. Wafer bonded epitaxial templates for silicon heterostructures

    NASA Technical Reports Server (NTRS)

    Atwater, Harry A., Jr. (Inventor); Zahler, James M. (Inventor); Morral, Anna Fontcubera I (Inventor)

    2008-01-01

    A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

  6. Ultrahigh efficiencies in vertical epitaxial heterostructure architectures

    SciTech Connect

    Fafard, S. E-mail: simon.fafard@azastra.com; Proulx, F.; York, M. C. A.; Arès, R.; Aimez, V.; Valdivia, C. E.; Wilkins, M. M.; Hinzer, K.; Masson, D. P.

    2016-02-15

    Optical to electrical power converting semiconductor devices were achieved with breakthrough performance by designing a Vertical Epitaxial Heterostructure Architecture. The devices are featuring modeled and measured conversion efficiencies greater than 65%. The ultrahigh conversion efficiencies were obtained by monolithically integrating several thin GaAs photovoltaic junctions tailored with submicron absorption thicknesses and grown in a single crystal by epitaxy. The heterostructures that were engineered with a number N of such ultrathin junctions yielded an optimal external quantum efficiencies approaching 100%/N. The heterostructures are capable of output voltages that are multiple times larger than the corresponding photovoltage of the input light. The individual nanoscale junctions are each generating up to ∼1.2 V of output voltage when illuminated in the infrared. We compare the optoelectronic properties of phototransducers prepared with designs having 5 to 12 junctions and that are exhibiting voltage outputs between >5 V and >14 V.

  7. Two-dimensional heterostructures for energy storage

    NASA Astrophysics Data System (ADS)

    Pomerantseva, Ekaterina; Gogotsi, Yury

    2017-07-01

    Two-dimensional (2D) materials provide slit-shaped ion diffusion channels that enable fast movement of lithium and other ions. However, electronic conductivity, the number of intercalation sites, and stability during extended cycling are also crucial for building high-performance energy storage devices. While individual 2D materials, such as graphene, show some of the required properties, none of them can offer all properties needed to maximize energy density, power density, and cycle life. Here we argue that stacking different 2D materials into heterostructured architectures opens an opportunity to construct electrodes that would combine the advantages of the individual building blocks while eliminating the associated shortcomings. We discuss characteristics of common 2D materials and provide examples of 2D heterostructured electrodes that showed new phenomena leading to superior electrochemical performance. We also consider electrode fabrication approaches and finally outline future steps to create 2D heterostructured electrodes that could greatly expand current energy storage technologies.

  8. Ultrahigh efficiencies in vertical epitaxial heterostructure architectures

    NASA Astrophysics Data System (ADS)

    Fafard, S.; York, M. C. A.; Proulx, F.; Valdivia, C. E.; Wilkins, M. M.; Arès, R.; Aimez, V.; Hinzer, K.; Masson, D. P.

    2016-02-01

    Optical to electrical power converting semiconductor devices were achieved with breakthrough performance by designing a Vertical Epitaxial Heterostructure Architecture. The devices are featuring modeled and measured conversion efficiencies greater than 65%. The ultrahigh conversion efficiencies were obtained by monolithically integrating several thin GaAs photovoltaic junctions tailored with submicron absorption thicknesses and grown in a single crystal by epitaxy. The heterostructures that were engineered with a number N of such ultrathin junctions yielded an optimal external quantum efficiencies approaching 100%/N. The heterostructures are capable of output voltages that are multiple times larger than the corresponding photovoltage of the input light. The individual nanoscale junctions are each generating up to ˜1.2 V of output voltage when illuminated in the infrared. We compare the optoelectronic properties of phototransducers prepared with designs having 5 to 12 junctions and that are exhibiting voltage outputs between >5 V and >14 V.

  9. Devices and applications of van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Li, Chao; Zhou, Peng; Zhang, David Wei

    2017-03-01

    Van der Waals heterostructures, composed of individual two-dimensional material have been developing extremely fast. Synthesis of van der Waals heterostructures without the constraint of lattice matching and processing compatibility provides an ideal platform for fundamental research and new device exploitation. We review the approach of synthesis of van der Waals heterostructures, discuss the property of heterostructures and thoroughly illustrate the functional van der Waals heterostructures used in novel electronic and photoelectronic device. Project supported by the National Key Research and Development Program (No. 2016YFA0203900) and the National Natural Science Foundation of China (Nos. 61376093, 61622401).

  10. Understanding thermal transport in asymmetric layer hexagonal boron nitride heterostructure

    NASA Astrophysics Data System (ADS)

    Zhang, Jingchao; Wang, Xinyu; Hong, Yang; Xiong, Qingang; Jiang, Jin; Yue, Yanan

    2017-01-01

    In this work, thermal transport at the junction of an asymmetric layer hexagonal boron-nitride (h-BN) heterostructure is explored using a non-equilibrium molecular dynamics method. A thermal contact resistance of 3.6 × 10-11 K · m2 W-1 is characterized at a temperature of 300 K with heat flux from the trilayer to monolayer regions. The mismatch in the flexural phonon modes revealed by power spectra analysis provides the driving force for the calculated thermal resistance. A high thermal rectification efficiency of 360% is calculated at the layer junction surpassing that of graphene. Several modulators, i.e. the system temperature, contact pressure and lateral dimensions, are applied to manipulate the thermal conductance and rectification across the interfaces. The predicted thermal rectification sustains positive correlations with temperature and phonon propagation lengths with little change to the coupling strength.

  11. Layer Resolved Imaging of Magnetic Domain Motion in Epitaxial Heterostructures

    NASA Astrophysics Data System (ADS)

    Zohar, Sioan; Choi, Yongseong; Love, David; Mansell, Rhodri; Barnes, Crispin; Keavney, David; Rosenberg, Richard

    We use X-ray Excited Luminescence Microscopy (XELM) to image the elemental and layer resolved magnetic domain structure of an epitaxial Fe/Cr wedge/Co heterostructure in the presence of large magnetic fields. The observed magnetic domains exhibit several unique behaviors that depend on the Cr thickness (tCr) modulated interlayer exchange coupling (IEC) strength. For Cr thickness tCr??1.5?nm, strongly coupled parallel Co-Fe reversal and weakly coupled layer independent reversal are observed, respectively. The transition between these two reversal mechanisms for 0.34?

  12. A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures

    PubMed Central

    Wofford, Joseph M.; Nakhaie, Siamak; Krause, Thilo; Liu, Xianjie; Ramsteiner, Manfred; Hanke, Michael; Riechert, Henning; J. Lopes, J. Marcelo

    2017-01-01

    Van der Waals heterostructures combining hexagonal boron nitride (h-BN) and graphene offer many potential advantages, but remain difficult to produce as continuous films over large areas. In particular, the growth of h-BN on graphene has proven to be challenging due to the inertness of the graphene surface. Here we exploit a scalable molecular beam epitaxy based method to allow both the h-BN and graphene to form in a stacked heterostructure in the favorable growth environment provided by a Ni(111) substrate. This involves first saturating a Ni film on MgO(111) with C, growing h-BN on the exposed metal surface, and precipitating the C back to the h-BN/Ni interface to form graphene. The resulting laterally continuous heterostructure is composed of a top layer of few-layer thick h-BN on an intermediate few-layer thick graphene, lying on top of Ni/MgO(111). Examinations by synchrotron-based grazing incidence diffraction, X-ray photoemission spectroscopy, and UV-Raman spectroscopy reveal that while the h-BN is relaxed, the lattice constant of graphene is significantly reduced, likely due to nitrogen doping. These results illustrate a different pathway for the production of h-BN/graphene heterostructures, and open a new perspective for the large-area preparation of heterosystems combining graphene and other 2D or 3D materials. PMID:28240323

  13. A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures.

    PubMed

    Wofford, Joseph M; Nakhaie, Siamak; Krause, Thilo; Liu, Xianjie; Ramsteiner, Manfred; Hanke, Michael; Riechert, Henning; J Lopes, J Marcelo

    2017-02-27

    Van der Waals heterostructures combining hexagonal boron nitride (h-BN) and graphene offer many potential advantages, but remain difficult to produce as continuous films over large areas. In particular, the growth of h-BN on graphene has proven to be challenging due to the inertness of the graphene surface. Here we exploit a scalable molecular beam epitaxy based method to allow both the h-BN and graphene to form in a stacked heterostructure in the favorable growth environment provided by a Ni(111) substrate. This involves first saturating a Ni film on MgO(111) with C, growing h-BN on the exposed metal surface, and precipitating the C back to the h-BN/Ni interface to form graphene. The resulting laterally continuous heterostructure is composed of a top layer of few-layer thick h-BN on an intermediate few-layer thick graphene, lying on top of Ni/MgO(111). Examinations by synchrotron-based grazing incidence diffraction, X-ray photoemission spectroscopy, and UV-Raman spectroscopy reveal that while the h-BN is relaxed, the lattice constant of graphene is significantly reduced, likely due to nitrogen doping. These results illustrate a different pathway for the production of h-BN/graphene heterostructures, and open a new perspective for the large-area preparation of heterosystems combining graphene and other 2D or 3D materials.

  14. Manipulable MR effect in a δ-doped magnetic nanostructure

    NASA Astrophysics Data System (ADS)

    Kong, Yong-Hong; Jiang, Ya-Qing; Fu, Xi; Li, Ai-Hua

    2016-05-01

    A magnetoresistance (MR) device was proposed by depositing two nanosized ferromagnetic strips on top and bottom of the semiconductor heterostructure. For the sake of manipulating its performance, we introduce a tunable δ-potential into this device with the help of the atomic-layer doping technique such as molecular beam epitaxy (MBE) or metal-organic chemical-vapor deposition (MOCVD). We investigate theoretically the impact of the δ-doping on the magnetoresistance ratio (MMRR) of the MR device. Although the δ-doping is embedded in the device, a considerable MR effect still exists due to different transmissions for the electron across parallel (P) and antiparallel (AP) configurations. Moreover, its MMRR varies sensitively with the magnitude and/or position of the δ-doping. Such an MR device can be controlled by changing the δ-doping, resulting in an adjustable MR device for magnetoelectronics applications.

  15. Complementary junction heterostructure field-effect transistor

    DOEpatents

    Baca, Albert G.; Drummond, Timothy J.; Robertson, Perry J.; Zipperian, Thomas E.

    1995-01-01

    A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.

  16. Complementary junction heterostructure field-effect transistor

    DOEpatents

    Baca, A.G.; Drummond, T.J.; Robertson, P.J.; Zipperian, T.E.

    1995-12-26

    A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits. 10 figs.

  17. High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

    SciTech Connect

    Hwan Lee, Seung; Lee, Jia; Ho Ra, Chang; Liu, Xiaochi; Hwang, Euyheon; Sup Choi, Min; Hee Choi, Jun; Zhong, Jianqiang; Chen, Wei; Jong Yoo, Won

    2014-02-03

    A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V{sup −1}, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.

  18. Enhanced Surface-and-Interface Coupling in Pd-Nanoparticle-coated LaAlO3/SrTiO3 Heterostructures: Strong Gas- and Photo-Induced Conductance Modulation

    PubMed Central

    Kim, Haeri; Chan, Ngai Yui; Dai, Ji-yan; Kim, Dong-Wook

    2015-01-01

    Pd nanoparticle (NP) coated LaAlO3/SrTiO3 (LAO/STO) heterointerface exhibits more notable conductance (G) change while varying the ambient gas (N2, H2/N2, and O2) and illuminating with UV light (wavelength: 365 nm) than a sample without the NPs. Simultaneous Kelvin probe force microscopy and transport measurements reveal close relationships between the surface work function (W) and G of the samples. Quantitative analyses suggest that a surface adsorption/desorption-mediated reaction and redox, resulting in a band-alignment modification and charge-transfer, could explain the gas- and photo-induced conductance modulation at the LAO/STO interface. Such surface-and-interface coupling enhanced by catalytic Pd NPs is a unique feature, quite distinct from conventional semiconductor hetero-junctions, which enables the significant conductance tunability at ultrathin oxide heterointerfaces by external stimuli. PMID:25704566

  19. Enhanced surface-and-interface coupling in Pd-nanoparticle-coated LaAlO3/SrTiO3 heterostructures: strong gas- and photo-induced conductance modulation.

    PubMed

    Kim, Haeri; Chan, Ngai Yui; Dai, Ji-yan; Kim, Dong-Wook

    2015-02-23

    Pd nanoparticle (NP) coated LaAlO3/SrTiO3 (LAO/STO) heterointerface exhibits more notable conductance (G) change while varying the ambient gas (N2, H2/N2, and O2) and illuminating with UV light (wavelength: 365 nm) than a sample without the NPs. Simultaneous Kelvin probe force microscopy and transport measurements reveal close relationships between the surface work function (W) and G of the samples. Quantitative analyses suggest that a surface adsorption/desorption-mediated reaction and redox, resulting in a band-alignment modification and charge-transfer, could explain the gas- and photo-induced conductance modulation at the LAO/STO interface. Such surface-and-interface coupling enhanced by catalytic Pd NPs is a unique feature, quite distinct from conventional semiconductor hetero-junctions, which enables the significant conductance tunability at ultrathin oxide heterointerfaces by external stimuli.

  20. Growth of Ga-doped ZnO nanowires by two-step vapor phase method

    SciTech Connect

    Xu, C.; Kim, M.; Chun, J.; Kim, D.

    2005-03-28

    A two-step route is presented to dope Ga into ZnO nanowires and also fabricate heterostructures of Ga-doped ZnO nanowires on ZnO. The content of Ga in ZnO nanowires is about 7 at. % from energy-dispersive x-ray analysis. The single crystal Ga doped ZnO nanowires with the diameter of 40 nm and the length of 300-500 nm are well aligned on the ZnO bulk. The growth direction is along [001]. Raman scattering analysis shows that the doping of Ga into ZnO nanowires depresses Raman E{sub 1L} mode of ZnO, manifesting that Ga sites in ZnO are Zn sites (Ga{sub Zn}). The formation mechanism of Zn{sub 1-x}Ga{sub x}O nanowires/ZnO heterostructures is proposed.

  1. Photo-doped carrier dynamics in Mott insulatoring systems

    NASA Astrophysics Data System (ADS)

    Iyoda, Eiki; Ishihara, Sumio

    2013-03-01

    Electron/hole doping in Mott insulators, for example two-dimensional cuprates, has been well investigated in relation to high-Tc superconductivity. Especially related to photo-doping, many experiments on photo-induced phase transition in strongly correlated systems have been made. In the usual photo-doping setup, the system is excited with fs-laser pulse and generated electron-hole pairs affect properties of materials. Recently, another type of photo-doped experiment with heterostructure has been made, and hole or electron carriers are dynamically injected through the heterostructure. In this theoretical study, we examine photo-doped carrier dynamics in the t-J model with dynamically doped holes. We formulate dynamics of the carriers by non-equilibrium Green functions. We take an initial state of holes and decompose the non-equilibrium Green's function into a series of equilibrium Green's functions by using Wick's theorem. The effect of the initial distribution appears from the higher terms in the series. We treat magnons with the self-consistent Born approximation. The non-equilibrium Green function derived in this way shows double time dependence. We will present physical quantities in transient process, for example, one-particle excitation spectra for holes.

  2. Nanocrystalline Fe-Fe2O3 particle-deposited N-doped graphene as an activity-modulated Pt-free electrocatalyst for oxygen reduction reaction

    NASA Astrophysics Data System (ADS)

    Dhavale, Vishal M.; Singh, Santosh K.; Nadeema, Ayasha; Gaikwad, Sachin S.; Kurungot, Sreekumar

    2015-11-01

    The size-controlled growth of nanocrystalline Fe-Fe2O3 particles (2-3 nm) and their concomitant dispersion on N-doped graphene (Fe-Fe2O3/NGr) could be attained when the mutually assisted redox reaction between NGr and Fe3+ ions could be controlled within the aqueous droplets of a water-in-oil emulsion. The synergistic interaction existing between Fe-Fe2O3 and NGr helped the system to narrow down the overpotential for the oxygen reduction reaction (ORR) by bringing a significant positive shift to the reduction onset potential, which is just 15 mV higher than its Pt-counterpart. In addition, the half-wave potential (E1/2) of Fe-Fe2O3/NGr is found to be improved by a considerable amount of 135 mV in comparison to the system formed by dispersing Fe-Fe2O3 nanoparticles on reduced graphene oxide (Fe-Fe2O3/RGO), which indicates the presence of a higher number of active sites in Fe-Fe2O3/NGr. Despite this, the ORR kinetics of Fe-Fe2O3/NGr are found to be shifted significantly to the preferred 4-electron-transfer pathway compared to NGr and Fe-Fe2O3/RGO. Consequently, the H2O2% was found to be reduced by 78.3% for Fe-Fe2O3/NGr (13.0%) in comparison to Fe-Fe2O3/RGO (51.2%) and NGr (41.0%) at -0.30 V (vs. Hg/HgO). This difference in the yield of H2O2 formed between the systems along with the improvements observed in terms of the oxygen reduction onset and E1/2 in the case of Fe-Fe2O3/NGr reveals the activity modulation achieved for the latter is due to the coexistence of factors such as the presence of the mixed valancies of iron nanoparticles, small size and homogeneous distribution of Fe-Fe2O3 nanoparticles and the electronic modifications induced by the doped nitrogen in NGr. A controlled interplay of these factors looks like worked favorably in the case of Fe-Fe2O3/NGr. As a realistic system level validation, Fe-Fe2O3/NGr was employed as the cathode electrode of a single cell in a solid alkaline electrolyte membrane fuel cell (AEMFC). The system could display an open

  3. Optical investigations of InGaN heterostructures and GeSn nanocrystals for photonic and phononic applications: light emitting diodes and phonon cavities

    NASA Astrophysics Data System (ADS)

    Hafiz, Shopan din Ahmad

    InGaN heterostructures are at the core of blue light emitting diodes (LEDs) which are the basic building blocks for energy efficient and environment friendly modern white light generating sources. Through quantum confinement and electronic band structure tuning on the opposite end of the spectrum, Ge1-xSnx alloys have recently attracted significant interest due to its potential role as a silicon compatible infra-red (IR) optical material for photodetectors and LEDs owing to transition to direct bandgap with increasing Sn. This thesis is dedicated to establishing an understanding of the optical processes and carrier dynamics in InGaN heterostructures for achieving more efficient visible light emitters and terahertz generating nanocavities and in colloidal Ge1-xSnx quantum dots (QDs) for developing efficient silicon compatible optoelectronics. To alleviate the electron overflow, which through strong experimental evidence is revealed to be the dominating mechanism responsible for efficiency degradation at high injection in InGaN based blue LEDs, different strategies involving electron injectors and optimized active regions have been developed. Effectiveness of optimum electron injector (EI) layers in reducing electron overflow and increasing quantum efficiency of InGaN based LEDs was demonstrated by photoluminescence (PL) and electroluminescence spectroscopy along with numerical simulations. Increasing the two-layer EI thickness in double heterostructure LEDs substantially reduced the electron overflow and increased external quantum efficiency (EQE) by three fold. By incorporating delta p-doped InGaN barriers in multiple quantum well (MQW) LEDs, 20% enhancement in EQE was achieved due to improved hole injection without degrading the layer quality. Carrier diffusion length, an important physical parameter that directly affects the performance of optoelectronic devices, was measured in epitaxial GaN using PL spectroscopy. The obtained diffusion lengths at room

  4. Interface magnetism in complex oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Srikanth, Hariharan

    2008-03-01

    Magnetic oxides are an important class of materials from the perspectives of fundamental physics and technological applications. Advances in growth of high quality thin films and epitaxial oxide heterostructures over the years, have led to the realization of ideal condensed matter systems in which the complex and rich physics associated with cooperative phenomena can be explored. Examples of coupled phenomena in heterostructures include exchange bias effects, magnetoelectric coupling and interplay between magnetism and superconductivity. In this talk, I will focus on three classes of oxide heterostructures --PLD-grown M-type barium hexaferrite(BaM)/barium strontium titanate(BST), CVD-grown CrO2/Cr2O3 bilayers and high-pressure sputtered LCMO/YBCO films. The common theme is the magnetic coupling across the interfaces. I will demonstrate that dynamic susceptibility and kinetic inductance experiments using a sensitive tunnel-diode oscillator (TDO) are effective probes of such coupled effects. In the case of CrO2/Cr2O3 and LCMO/YBCO, the interface coupling results in anomalous anisotropy, exchange bias in the former and complex interaction between the LCMO magnetism and YBCO vortex lattice in the latter. In BaM/BST heterostructures, I will discuss how interfacial coupling influences the microwave response that is both electrically and magnetically tunable.

  5. Design and discovery of heterostructural alloys

    NASA Astrophysics Data System (ADS)

    Holder, Aaron; Siol, Sebastian; Ndione, Paul; Peng, Haowei; Zakutayev, Andriy; Lany, Stephan; Matthews, Bethany; Tate, Janet; Gorman, Brian; Gordon, Roy; Schelhas, Laura; Toney, Mike

    The tailoring of materials properties by alloying is routinely utilized to design materials for targeted technological applications. Despite the great successes of alloying in isostructural systems, heterostructural alloying remains a fundamentally unexplored area. In heterostructural alloys, the crossover between different crystal structures enables a new parameter for control over structure and properties by variation of the composition. Here, we present a complementary theoretical and experimental investigation of novel semiconducting metal chalcogenide alloys to develop design principles and approaches for utilizing heterostructural alloying as a materials design strategy. We use ab initio methods to predict the structural and electronic properties of novel alloys with commensurate and incommensurate lattice symmetries. Non-equilibrium deposition methods are employed to overcome thermodynamic solubility limits and produce metastable thin-film samples across the entire alloy composition range. The prediction, theory-guided combinatorial synthesis, and characterization of heterostructural alloys demonstrate the design and discovery of functional metastable materials. Our approach establishes a new route for the control of structure-property and composition-structure relationships by accessing non-equilibrium phase space to develop new materials with uniquely tailored properties.

  6. Single heterostructure lasers: a UK perspective

    NASA Astrophysics Data System (ADS)

    Selway, Peter

    2012-09-01

    The gallium-aluminium-arsenide single heterostructure laser was the first commercially successful semiconductor laser produced in the UK. This paper presents a personal perspective on the events leading up to volume production and highlights the fascinating physics involved in this device and the impact of this on the task of engineering a robust component which was eventually manufactured for over 20 years.

  7. Investigation of Quantum Effects in Heterostructures

    DTIC Science & Technology

    1993-08-20

    Mendez and C. Tejedor (Plenum, New York, 1991), p. 1. "* Resonant Magnetotunneling in Type-Il Heterostructures, in Resonant Tunneling in Semiconductors...Physics and Applications, ed. by L. L. Chang, E. E. Mendez and C. Tejedor (Plenum, New York, 1991), p. 51. "* The Evolution of Semiconductor Quantum

  8. Strain induced piezoelectric effect in black phosphorus and MoS2 van der Waals heterostructure

    PubMed Central

    Huang, Le; Li, Yan; Wei, Zhongming; Li, Jingbo

    2015-01-01

    The structural, electronic, transport and optical properties of black phosphorus/MoS2 (BP/MoS2) van der Waals (vdw) heterostructure are investigated by using first principles calculations. The band gap of BP/MoS2 bilayer decreases with the applied normal compressive strain and a semiconductor-to-metal transition is observed when the applied strain is more than 0.85 Å. BP/MoS2 bilayer also exhibits modulation of its carrier effective mass and carrier concentration by the applied compressive strain, suggesting that mobility engineering and good piezoelectric effect can be realized in BP/MoS2 heterostructure. Because the type-II band alignment can facilitate the separation of photo-excited electrons and holes, and it can benefit from the great absorption coefficient in ultra-violet region, the BP/MoS2 shows great potential to be a very efficient ultra-violet photodetector. PMID:26553370

  9. Light induced double ‘on’ state anti-ambipolar behavior and self-driven photoswitching in p-WSe2/n-SnS2 heterostructures

    NASA Astrophysics Data System (ADS)

    Wang, Yan; Zhou, Wu-Xing; Huang, Le; Xia, Congxin; Tang, Li-Ming; Deng, Hui-Xiong; Li, Yongtao; Chen, Ke-Qiu; Li, Jingbo; Wei, Zhongming

    2017-06-01

    P-n junctions based on vertically stacked van der Waals (vdW) materials have attracted extensive attentions and may offer novel physical performances for the design of next-generation electronics. Here, vertically stacked p-WSe2/n-SnS2 heterostructures have been fabricated by a polymethyl methacrylate (PMMA)-assisted transfer method. The unique electronical properties and self-driven photoelectric characteristics of the heterostructures are measured. The transfer current of the heterostructures show gate-tunable ‘anti-ambipolar’ behavior under dark condition with the maximum of the on/off ratio exceeding 105, while under light illumination it triggers double ‘on’ state anti-ambipolar behavior. The ‘anti-ambipolar’ behavior under dark condition and the ‘on’ state I under light illumination is originating from the in series of p-channel in WSe2 and n-channel in SnS2, while the ‘on’ state II can be attributed to the gate-controlled Schottky barrier modulation between the heterostructure and the Au electrodes. The heterostructure also shows self-driven photoswitching performance under 532 nm laser, which can be attributed to the type-II band alignment and the build-in potential of p-n heterostructure.

  10. Dual-donor (Zn(i) and V(O)) mediated ferromagnetism in copper-doped ZnO micron-scale polycrystalline films: a thermally driven defect modulation process.

    PubMed

    Hu, Liang; Huang, Jun; He, Haiping; Zhu, Liping; Liu, Shijiang; Jin, Yizheng; Sun, Luwei; Ye, Zhizhen

    2013-05-07

    The paper reports robust ferromagnetic Cu-doped ZnO micron-scale polycrystalline films via spin-coating using high-quality doped nanocrystals. A reliable magnetic response is observed in the 900 °C vacuum annealed film without any ferromagnetic contribution from other sources. Post-annealing treatment in terms of atmosphere and temperature can control the proportion of oxygen vacancies (V(O)) and zinc interstitials (Zn(i)) defects and further help to precisely regulate defect-related ferromagnetic behavior. Complex charge transfer processes derived from dual-donor (Zn(i) and V(O)) to Cu acceptor are revealed by photoluminescence (PL) and electron paramagnetic resonance (EPR) spectra. Based on the above, specific charge transfer (CT)-type Stoner splitting and indirect double-exchange mechanisms are proposed to understand the ferromagnetic origin. The improvable FM performance and annealing-specific modulation further indicate that a thermal driven process can delicately tailor the magnetic property of the transition metal ion-doped ZnO system.

  11. Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode

    NASA Astrophysics Data System (ADS)

    Chu, Sheng; Zhao, Jianze; Zuo, Zheng; Kong, Jieying; Li, Lin; Liu, Jianlin

    2011-06-01

    A diode with Sb-doped p-type ZnO, MgZnO/ZnO/MgZnO double heterostructure, and undoped n-type ZnO layers was grown on c-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. Hall effect measurement showed that the top p-type Sb-doped ZnO layer has a hole concentration of 1 × 1017cm-3. Mesa geometry light emitting diodes were fabricated with Au/Ni and Au/Ti Ohmic contacts on top of the p-type and n-type layers, respectively. Ultraviolet emission was achieved, which yielded an output power of 457 nW at 140 mA. The enhancement of the output power is attributed to carrier confinement in the good-quality intrinsic layer of the double heterostructure. The spatial distribution of light emission was characterized.

  12. Tunneling spectroscopy in engineered SrTiO3 heterostructures

    NASA Astrophysics Data System (ADS)

    Swartz, Adrian; Inoue, Hisashi; Merz, Tyler; Hikita, Yasuyuki; Hwang, Harold

    Despite decades of intense research on the topic, superconductivity in the dilute high- k semiconductor SrTiO3 (STO) has posed a long-standing problem. In light of the recent reports of unconventional 2D superconductivity in STO-based heterostructures, this problem deserves renewed attention in the bulk limit. Tunneling spectroscopy, which directly measures the electronic density of states, is a powerful tool to investigate the superconducting ground state as well as the relevant electron-phonon couplings. A limiting obstacle for employing this technique is the long depletion lengths formed when semiconducting SrTiO3 is contacted with a metal in Schottky junctions, which obstructs access to the intrinsic bulk electronic properties. Here, using band alignment engineered planar tunneling junctions to minimize these long depletion lengths, we experimentally re-examine canonical tunneling experiments in Nb-doped STO. We discuss our results on the extraction of the electron-phonon coupling in SrTiO3 and it's relevance to the superconducting condensate.

  13. Spin-torque generation in topological insulator based heterostructures

    NASA Astrophysics Data System (ADS)

    Fischer, Mark H.; Vaezi, Abolhassan; Manchon, Aurelien; Kim, Eun-Ah

    2016-03-01

    Heterostructures utilizing topological insulators exhibit a remarkable spin-torque efficiency. However, the exact origin of the strong torque, in particular whether it stems from the spin-momentum locking of the topological surface states or rather from spin-Hall physics of the topological-insulator bulk, remains unclear. Here, we explore a mechanism of spin-torque generation purely based on the topological surface states. We consider topological-insulator-based bilayers involving ferromagnetic metal (TI/FM) and magnetically doped topological insulators (TI/mdTI), respectively. By ascribing the key theoretical differences between the two setups to location and number of active surface states, we describe both setups within the same framework of spin diffusion of the nonequilibrium spin density of the topological surface states. For the TI/FM bilayer, we find large spin-torque efficiencies of roughly equal magnitude for both in-plane and out-of-plane spin torques. For the TI/mdTI bilayer, we elucidate the dominance of the spin-transfer-like torque. However, we cannot explain the orders of magnitude enhancement reported. Nevertheless, our model gives an intuitive picture of spin-torque generation in topological-insulator-based bilayers and provides theoretical constraints on spin-torque generation due to topological surface states.

  14. The Nernst effect in ferromagnet-superconductor bilayer heterostructures

    NASA Astrophysics Data System (ADS)

    Matusiak, M.; Lochmajer, H.; Przysłupski, P.; Rogacki, K.

    2015-11-01

    We report the transport properties of the La0.67Sr0.33MnO3 (LSMO)/YBa2Cu3O7+d (YBCO) heterostructures in the vicinity of the superconducting transition. The bottom deposited manganite was an LSMO ferromagnet with a Curie temperature of 350 K, while the top deposited cuprate was a nearly optimally doped YBCO superconductor with T c ˜ 90 K. The samples used in these studies had fixed a thickness of LSMO layer (90 nm), whereas the thickness of the YBCO layer was varied between 20 and 100 nm. Single YBCO layers with respective thicknesses were also measured for comparison. The mixed state properties of the bilayers and single layers were characterized by means of the Nernst effect and electrical resistance measurements in magnetic fields of up to B = 12.5 T. All investigated samples show a zero-resistance state below T = 60 K in a field of 12.5 T and demonstrate gradual degradation of the superconducting properties with decreasing thickness of the YBCO layer in bilayer structures.

  15. Probing charge transfer in a novel class of luminescent perovskite-based heterostructures composed of quantum dots bound to RE-activated CaTiO3 phosphors

    NASA Astrophysics Data System (ADS)

    Lewis, Crystal S.; Liu, Haiqing; Han, Jinkyu; Wang, Lei; Yue, Shiyu; Brennan, Nicholas A.; Wong, Stanislaus S.

    2016-01-01

    We report on the synthesis and structural characterization of novel semiconducting heterostructures composed of cadmium selenide (CdSe) quantum dots (QDs) attached onto the surfaces of novel high-surface area, porous rare-earth-ion doped alkaline earth titanate micron-scale spherical motifs, i.e. both Eu-doped and Pr-doped CaTiO3, composed of constituent, component nanoparticles. These unique metal oxide perovskite building blocks were created by a multi-pronged synthetic strategy involving molten salt and hydrothermal protocols. Subsequently, optical characterization of these heterostructures indicated a clear behavioral dependence of charge transfer in these systems upon a number of parameters such as the nature of the dopant, the reaction temperature, and particle size. Specifically, 2.7 nm diameter ligand-functionalized CdSe QDs were anchored onto sub-micron sized CaTiO3-based spherical assemblies, prepared by molten salt protocols. We found that both the Pr- and Eu-doped CaTiO3 displayed pronounced PL emissions, with maximum intensities observed using optimized lanthanide concentrations of 0.2 mol% and 6 mol%, respectively. Analogous experiments were performed on Eu-doped BaTiO3 and SrTiO3 motifs, but CaTiO3 still performed as the most effective host material amongst the three perovskite systems tested. Moreover, the ligand-capped CdSe QD-doped CaTiO3 heterostructures exhibited effective charge transfer between the two individual constituent nanoscale components, an assertion corroborated by the corresponding quenching of their measured PL signals.We report on the synthesis and structural characterization of novel semiconducting heterostructures composed of cadmium selenide (CdSe) quantum dots (QDs) attached onto the surfaces of novel high-surface area, porous rare-earth-ion doped alkaline earth titanate micron-scale spherical motifs, i.e. both Eu-doped and Pr-doped CaTiO3, composed of constituent, component nanoparticles. These unique metal oxide perovskite

  16. Formation of core@multi-shell CdSe@CdZnS-ZnS quantum dot heterostructure films by pulse electrophoresis deposition

    NASA Astrophysics Data System (ADS)

    Raj, Sudarsan; Yun, Jin Hyeon; Adilbish, Ganpurev; Ch, Rama Krishna; Lee, In Hwan; Lee, Min Sang; Yu, Yeon-Tae

    2015-07-01

    CdSe@CdZnS-ZnS core@multi-shell quantum dot (QD) heterostructures were deposited on fluorine doped tinoxide (FTO) glass substrate by pulse electrophoresis deposition (EPD). Field emissions scanning electron microscopy (FESEM) images reveal that the number of QDs deposited on the substrate increased with prolonged deposition time. Ethanol is the better solution medium as compared to 2-propanol for pulse electrophoresis deposition. For longer deposition time the intensity of photo luminescence (PL) peak increased.

  17. Materials Development and Spin Transport Study of Magnetic Insulator Based Heterostructures

    NASA Astrophysics Data System (ADS)

    Tang, Chi

    The subfield of magnetic insulator (MI) based spintronics is playing a substantial role in modern solid state physics research. Spin current in the MI is propagated in spin wave with a much longer decay length than spin-polarized carriers in conducting ferromagnet. In the MI-based hetereostructures, the adjacent non-magnetic materials can be magnetized in proximity of MI. Therefore, it is a promising system to study exotic transport phenomena such as quantum Anomalous Hall effect in topological insulator and graphene. Rare-earth Iron garnet (ReIG), a class of magnetic insulators with large electronic bandgap and high Curie temperature, stands out among various magnetic insulator materials and have attracted a great deal of attention in recent magnetic insulator based spintronics research. The first chapter of this dissertation gives a brief introduction to the spintronics research by introducing some essential concepts in the spintronics field and the most recent spin transport phenomena. The second chapter of this dissertation summarizes my work in the materials development of ReIG ferrimagnetic insulators, including exquisite control of high quality ultra-flat yttrium iron garnet (YIG) thin films with extremely low magnetic damping and engineering of strain induced robust perpendicular magnetic anisotropy in thulium iron garnet (TIG) and Bi-doped YIG films. The last chapter of this dissertation shows a systematic study in various ReIG based heterostructures, mainly divided into groups: ReIG (YIG & TIG)/heavy metal bilayers (Pd & Pt) and ReIG (YIG & TIG)/Dirac systems (graphene & topological insulator). The magneto-transport study disentangles the contribution from a spin current origin and proximity induced magnetism. Furthermore, the demonstration in the proximity coupling induced high-temperature ferromagnetic phase in low-dimensional Dirac systems, i.e. graphene and topological insulator surface states, provides new possibilities in the future spintronics

  18. Probing charge transfer in a novel class of luminescent perovskite-based heterostructures composed of quantum dots bound to RE-activated CaTiO3 phosphors

    DOE PAGES

    Crystal S. Lewis; Wong, Stanislaus S.; Liu, Haiqing; ...

    2016-01-04

    We report on the synthesis and structural characterization of novel semiconducting heterostructures composed of cadmium selenide (CdSe) quantum dots (QDs) attached onto the surfaces of novel high-surface area, porous rare-earth-ion doped alkaline earth titanate micron-scale spherical motifs, i.e. both Eu-doped and Pr-doped CaTiO3, composed of constituent, component nanoparticles. These unique metal oxide perovskite building blocks were created by a multi-pronged synthetic strategy involving molten salt and hydrothermal protocols. Subsequently, optical characterization of these heterostructures indicated a clear behavioral dependence of charge transfer in these systems upon a number of parameters such as the nature of the dopant, the reaction temperature,more » and particle size. Specifically, 2.7 nm diameter ligand-functionalized CdSe QDs were anchored onto sub-micron sized CaTiO3-based spherical assemblies, prepared by molten salt protocols. We found that both the Pr- and Eu-doped CaTiO3 displayed pronounced PL emissions, with maximum intensities observed using optimized lanthanide concentrations of 0.2 mol% and 6 mol%, respectively. Analogous experiments were performed on Eu-doped BaTiO3 and SrTiO3 motifs, but CaTiO3 still performed as the most effective host material amongst the three perovskite systems tested. Furthermore, the ligand-capped CdSe QD-doped CaTiO3 heterostructures exhibited effective charge transfer between the two individual constituent nanoscale components, an assertion corroborated by the corresponding quenching of their measured PL signals.« less

  19. Probing charge transfer in a novel class of luminescent perovskite-based heterostructures composed of quantum dots bound to RE-activated CaTiO3 phosphors.

    PubMed

    Lewis, Crystal S; Liu, Haiqing; Han, Jinkyu; Wang, Lei; Yue, Shiyu; Brennan, Nicholas A; Wong, Stanislaus S

    2016-01-28

    We report on the synthesis and structural characterization of novel semiconducting heterostructures composed of cadmium selenide (CdSe) quantum dots (QDs) attached onto the surfaces of novel high-surface area, porous rare-earth-ion doped alkaline earth titanate micron-scale spherical motifs, i.e. both Eu-doped and Pr-doped CaTiO3, composed of constituent, component nanoparticles. These unique metal oxide perovskite building blocks were created by a multi-pronged synthetic strategy involving molten salt and hydrothermal protocols. Subsequently, optical characterization of these heterostructures indicated a clear behavioral dependence of charge transfer in these systems upon a number of parameters such as the nature of the dopant, the reaction temperature, and particle size. Specifically, 2.7 nm diameter ligand-functionalized CdSe QDs were anchored onto sub-micron sized CaTiO3-based spherical assemblies, prepared by molten salt protocols. We found that both the Pr- and Eu-doped CaTiO3 displayed pronounced PL emissions, with maximum intensities observed using optimized lanthanide concentrations of 0.2 mol% and 6 mol%, respectively. Analogous experiments were performed on Eu-doped BaTiO3 and SrTiO3 motifs, but CaTiO3 still performed as the most effective host material amongst the three perovskite systems tested. Moreover, the ligand-capped CdSe QD-doped CaTiO3 heterostructures exhibited effective charge transfer between the two individual constituent nanoscale components, an assertion corroborated by the corresponding quenching of their measured PL signals.

  20. Heterostructures based on inorganic and organic van der Waals systems

    NASA Astrophysics Data System (ADS)

    Lee, Gwan-Hyoung; Lee, Chul-Ho; van der Zande, Arend M.; Han, Minyong; Cui, Xu; Arefe, Ghidewon; Nuckolls, Colin; Heinz, Tony F.; Hone, James; Kim, Philip

    2014-09-01

    The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS2 heterostructures for memory devices; graphene/MoS2/WSe2/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors.