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Sample records for molecular beam deposition

  1. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

    1995-01-01

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

  2. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, S.A.; Killeen, K.P.; Lear, K.L.

    1995-01-10

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time. 9 figures.

  3. Molecular beam deposition of nanoscale ionic liquids in ultrahigh vacuum.

    PubMed

    Maruyama, Shingo; Takeyama, Yoko; Taniguchi, Hiroki; Fukumoto, Hiroki; Itoh, Mitsuru; Kumigashira, Hiroshi; Oshima, Masaharu; Yamamoto, Takakazu; Matsumoto, Yuji

    2010-10-26

    We propose a new approach to nanoscience and technology for ionic liquids (ILs): molecular beam deposition of IL in ultrahigh vacuum by using a continuous wave infrared (CW-IR) laser deposition technique. This approach has made it possible to prepare a variety of "nano-IL" with the given composition on the substrate: a nanodroplet, on one hand, the volume of which goes down to 1 aL and, on the other hand, an ultrathin film with a thickness to several 100 nm or less. The result of fractional distillation of a binary mixture of ILs, investigated by nuclear magnetic resonance as well as electrospray ionization time-of-flight mass spectrometry, indicates that this deposition process is based on the thermal evaporation of ILs, and thus this process also can be used as a new purification method of ILs in vacuum. Furthermore, the fabrication of binary mixture droplets of two ILs on the substrate by alternating deposition of two ILs was demonstrated; the homogeneity of the composition was confirmed even for one single droplet by high-spatial-resolution Raman spectroscopy.

  4. High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition

    SciTech Connect

    Chiarella, F. Barra, M.; Ciccullo, F.; Cassinese, A.; Toccoli, T.; Aversa, L.; Tatti, R.; Verucchi, R.

    2014-04-07

    In this paper, we report on the fabrication of N,N′-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN{sub 2}) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm{sup 2}/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound.

  5. Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

    SciTech Connect

    Comes, Ryan; Liu Hongxue; Lu Jiwei; Gu, Man; Khokhlov, Mikhail; Wolf, Stuart A.

    2013-01-14

    Complex oxide epitaxial film growth is a rich and exciting field, owing to the wide variety of physical properties present in oxides. These properties include ferroelectricity, ferromagnetism, spin-polarization, and a variety of other correlated phenomena. Traditionally, high quality epitaxial oxide films have been grown via oxide molecular beam epitaxy or pulsed laser deposition. Here, we present the growth of high quality epitaxial films using an alternative approach, the pulsed electron-beam deposition technique. We demonstrate all three epitaxial growth modes in different oxide systems: Frank-van der Merwe (layer-by-layer); Stranski-Krastanov (layer-then-island); and Volmer-Weber (island). Analysis of film quality and morphology is presented and techniques to optimize the morphology of films are discussed.

  6. The nanoscale implications of a molecular gas beam during electron beam induced deposition.

    PubMed

    Winkler, Robert; Fowlkes, Jason; Szkudlarek, Aleksandra; Utke, Ivo; Rack, Philip D; Plank, Harald

    2014-02-26

    The gas flux direction in focused electron beam induced processes can strongly destabilize the morphology on the nanometer scale. We demonstrate how pattern parameters such as position relative to the gas nozzle, axial rotation, scanning direction, and patterning sequence result in different growth modes for identical structures. This is mainly caused by nanoscale geometric shadowing, particularly when shadowing distances are comparable to surface diffusion lengths of (CH3)3-Pt-CpCH3 adsorbates. Furthermore, two different adsorbate replenishment mechanisms exist and are governed by either surface diffusion or directional gas flux adsorption. The experimental study is complemented by calculations and dynamic growth simulations which successfully emulate the observed morphology instabilities and support the proposed growth model.

  7. Temperature stabilized effusion cell evaporation source for thin film deposition and molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Tiedje, H. F.; Brodie, D. E.

    2000-05-01

    A simple effusion cell evaporation source for thin film deposition and molecular-beam epitaxy is described. The source consists of a crucible with a thermocouple temperature sensor heated by a resistive crucible heater. Radiation heat transfer from the crucible to the thermocouple produces a consistent and reproducible thermocouple temperature for a given crucible temperature, without direct contact between the thermocouple and the crucible. The thermocouple temperature is somewhat less than the actual crucible temperature because of heat flow from the thermocouple junction along the thermocouple lead wires. In a typical case, the thermocouple temperature is 1007 °C while the crucible is at 1083 °C. The crucible temperature stability is estimated from the measured sensitivity of the evaporation rate of indium to temperature, and the observed variations in the evaporation rate for a fixed thermocouple temperature. The crucible temperature peak-to-peak variation over a one hour period is 1.2 °C. Machined molybdenum crucibles were used in the indium and copper sources for depositing CuInSe2 thin films for solar cells.

  8. Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeOx films grown by molecular beam deposition

    NASA Astrophysics Data System (ADS)

    Molle, Alessandro; Baldovino, Silvia; Fanciulli, Marco; Tsoutsou, Dimitra; Golias, Evangelos; Dimoulas, Athanasios

    2011-10-01

    Changes in the electron trapping at the interface between Ge substrates and LaGeOx films grown by atomic O assisted molecular beam deposition are inferred upon post deposition annealing treatment on the as-deposited films from electrically detected magnetic resonance (EDMR) spectroscopy and from the electrical response of Pt/LaGeOx/Ge metal oxide semiconductor (MOS) capacitors. The improved electrical performance of the MOS capacitors upon annealing is consistent with the EDMR detected reduction of oxide defects which are associated with GeO species in the LaGeOx layer as evidenced by x-ray photoelectron spectroscopy.

  9. Structural and magnetic properties of magnetoelectric oxide heterostructures deposited by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sterbinsky, George Evan

    There is considerable interest in incorporating magnetic materials into electronic devices to achieve new functions such as nonvolatile memories. Electric field control of magnetism is of much interest for new low power electronic devices because it eliminates the need to apply magnetic fields. One approach to achieving electrical control of magnetism is to exploit magnetoelastic effects in composites of ferromagnetic and ferroelectric materials. Application of an electric field to the composite will induce a strain through the piezo-electric effect, and the strain will alter the magnetization of the ferromagnetic constituent through the magnetoelastic effect. In this work, we examine the relationships between growth, strain, and magnetic properties of epitaxial ferrimagnetic Fe3O4 (magnetite) and ferroelectric BaTiO3 thin film heterostructures. We find that altering the strain state of a magnetite layer deposited on a BaTiO3 substrate has a profound effect on its magnetization. Here, we demonstrate the interaction between strain and magnetization is mediated by magnetic anisotropy and the magnetic domains structure of the films. Epitaxial magnetite films were deposited on MgO, BaTiO3, and SrTiO3 substrates by molecular beam epitaxy between temperatures of 573 and 723 K. Examination of the morphologies of Fe3O 4 films indicates that island growth is favored. Films exhibit in-plane magnetic isotropy and reduced saturation magnetizations with respect to the bulk material, as demonstrated by superconducting quantum interference device magnetometry. Magnetic hysteresis measurements suggest that these differences originate from antiphase boundary defects within the films. The strain in magnetite films deposited on BaTiO3 single crystal substrates was measured by x-ray diffraction. Measurements reveal a dependence of magnetization (M) on strain (epsilon) with discontinuities in magnetization versus temperature curves resulting from changes in the domain structure of the

  10. Ionized cluster beam deposition

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, A. R.

    1983-01-01

    Ionized Cluster Beam (ICB) deposition, a new technique originated by Takagi of Kyoto University in Japan, offers a number of unique capabilities for thin film metallization as well as for deposition of active semiconductor materials. ICB allows average energy per deposited atom to be controlled and involves impact kinetics which result in high diffusion energies of atoms on the growth surface. To a greater degree than in other techniques, ICB involves quantitative process parameters which can be utilized to strongly control the characteristics of films being deposited. In the ICB deposition process, material to be deposited is vaporized into a vacuum chamber from a confinement crucible at high temperature. Crucible nozzle configuration and operating temperature are such that emerging vapor undergoes supercondensation following adiabatic expansion through the nozzle.

  11. Low-Temperature Growth of InAs on Glass and Plastic Film Substrates by Molecular-Beam Deposition

    NASA Astrophysics Data System (ADS)

    Takushima, Masanao; Kajikawa, Yasutomo; Kuya, Yu; Shiba, Masaki; Ohnishi, Kazuyoshi

    2008-03-01

    InAs layers were deposited on glass substrates by molecular-beam deposition at substrate temperatures of 180-240 °C at As/In beam equivalent pressure (BEP) ratios of 3-30. X-ray diffraction (XRD) patterns indicated that the InAs layers are polycrystalline and are more preferentially textured in the (111) plane when deposited at higher temperatures and lower As/In BEP ratios. Room-temperature Hall effect measurement showed that the films deposited at an As/In BEP ratio of 30 exhibit n-type conduction with electron concentrations of approximately 3 ×1018 cm-3, being almost independent of substrate temperature. With decreasing As/In BEP ratio from 30 to 3 at a fixed substrate temperature of 240 °C, the electron concentration decreased to 1.5 ×1018 cm-3 and the electron mobility increased to 610 cm2/(V·s). Preliminary results of the deposition on plastic substrates showed an electron mobility of 460 cm2/(V·s) when the layer was deposited at 280 °C at an As/In BEP ratio of 30.

  12. Molecular beam epitaxy deposition of Gd2O3 thin films on SrTiO3 (100) substrate

    NASA Astrophysics Data System (ADS)

    Wang, Jinxing; Hao, Jinghua; Zhang, Yangyang; Wei, Hongmei; Mu, Juyi

    2016-06-01

    Gd2O3 thin films are grown on the SrTiO3 (100) substrate by molecular beam epitaxy (MBE) deposition. X-ray diffraction (XRD) analysis, conventional transmission electron microscopy (TEM) and aberration-corrected scanning transmission electron microscopy (STEM) are performed to investigate the microstructure of deposited thin films. It is found that the as-deposited thin film possesses a very uniform thickness of ∼40 nm and is composed of single cubic phase Gd2O3 grains. STEM and TEM observations reveal that Gd2O3 thin film grows epitaxially on the SrTiO3 (100) substrate with (001)Gd2O3//(100)STO and [110]Gd2O3//[001]STO orientations. Furthermore, the Gd atoms are found to diffuse into the SrTiO3 substrate for a depth of one unit cell and substitute for the Sr atoms near the interface.

  13. Controlling field-effect mobility in pentacene-based transistors by supersonic molecular-beam deposition

    SciTech Connect

    Toccoli, T.; Pallaoro, A.; Coppede, N.; Iannotta, S.; De Angelis, F.; Mariucci, L.; Fortunato, G.

    2006-03-27

    We show that pentacene field-effect transistors, fabricated by supersonic molecular beams, have a performance strongly depending on the precursor's kinetic energy (K{sub E}). The major role played by K{sub E} is in achieving highly ordered and flat films. In the range K{sub E}{approx_equal}3.5-6.5 eV, the organic field effect transistor linear mobility increases of a factor {approx}5. The highest value (1.0 cm{sup 2} V{sup -1} s{sup -1}) corresponds to very uniform and flat films (layer-by-layer type growth). The temperature dependence of mobility for films grown at K{sub E}>6 eV recalls that of single crystals (bandlike) and shows an opposite trend for films grown at K{sub E}{<=}5.5 eV.

  14. Morphological and optical properties of titanyl phthalocyanine films deposited by supersonic molecular beam epitaxy (SuMBE)

    NASA Astrophysics Data System (ADS)

    Walzer, Karsten; Toccoli, Tullio; Pallaoro, Alessia; Verucchi, Roberto; Fritz, Torsten; Leo, Karl; Boschetti, Andrea; Iannotta, Salvatore

    2004-12-01

    We studied the growth and properties of titanyl phthalocyanine (TiOPc) thin films made by supersonic molecular beam epitaxy (SuMBE). Interesting differences in the growth properties on amorphous (quartz) and crystalline (mica) substrates were found, indicating that SuMBE gives rise to an epitaxy of disc-like organic molecules on crystalline substrates. The combined control of the kinetic energy of the molecules in the supersonic beam specific to SuMBE and of the substrate temperature during deposition are the key parameters used to determine the final properties of the films. We show that SuMBE is a well-suited epitaxy method for the deposition of relatively large organic molecules, leading to layers of thin organic (single-)crystals with lateral dimensions in the micrometer range. By SuMBE we can control the growth of different polymorphs of TiOPc. We found and studied two ways to produce films of red and infrared absorbing phase II TiOPc, which is of interest for applications in organic solar cells.

  15. An investigation of the internal temperature dependence of Pd-Pt cluster beam deposition: A molecular dynamics study

    NASA Astrophysics Data System (ADS)

    Chen, Cha'o.-Kuang; Chang, Shing-Cheng

    2010-02-01

    We investigated the internal temperature dependence of the Pd 1- aPt a cluster beam deposition in the present study via the molecular dynamics simulations of soft-landing. By analysis of the velocity distribution and diffusion coefficient of the bimetallic cluster, Pd atoms with better mobility improved the diffusibility of Pt atoms. The radial composition distribution showed that a Pt-core/Pd-shell structure of the cluster formed at high internal temperatures through migrations of the Pd atoms from inner to surface shells. In the soft-landing process, the diffusing and epitaxial behaviors of the deposited clusters mainly depended on the internal temperature because the incident energy of the cluster was very small. By depositing clusters at high internal temperatures, we obtained a thin film of good epitaxial growth as the energetic cluster impact. Furthermore, nonepitaxial configurations such as scattered nonepitaxial atoms, misoriented particles, and grain boundaries of (1 1 1) planes were produced in the growth of the cluster-assembled film. As the size of the incident cluster increased, the internal temperature of the cluster needed for better interfacial diffusion and contact epitaxy on the substrate also rose.

  16. Experimental cell for molecular beam deposition and magnetic resonance studies of matrix isolated radicals at temperatures below 1 K

    SciTech Connect

    Sheludiakov, S. Ahokas, J.; Vainio, O.; Järvinen, J.; Zvezdov, D.; Vasiliev, S.; Khmelenko, V. V.; Mao, S.; Lee, D. M.

    2014-05-15

    We present the design and performance of an experimental cell constructed for matrix isolation studies of H and D atoms in solid H{sub 2}/D{sub 2} films, which are created by molecular beam deposition at temperatures below 1 K. The sample cell allows sensitive weighing of the films by a quartz microbalance (QM) and their studies by magnetic resonance techniques in a strong magnetic field of 4.6 T. We are able to regulate the deposition rate in the range from 0.01 to 10 molecular layers/s, and measure the thickness with ≈0.2 monolayer resolution. The upper QM electrode serves as a mirror for a 128 GHz Fabry-Perot resonator connected to an electron spin resonance (ESR) spectrometer. H and D atoms were created by RF discharge in situ in the sample cell, and characterized by ESR and electron-nuclear double resonance. From the magnetic resonance measurements we conclude that the films are smooth and provide homogeneous trapping conditions for embedded atoms. The current sample cell design also makes it possible to calibrate the ESR signal and estimate the average and local concentrations of H and D radicals in the film.

  17. Comparison of morphology evolution of Ge(001) homoepitaxial films grown by pulsed laser deposition and molecular-beam epitaxy

    SciTech Connect

    Shin Byungha; Leonard, John P.; McCamy, James W.; Aziz, Michael J.

    2005-10-31

    Using a dual molecular-beam epitaxy (MBE)-pulsed laser deposition (PLD) ultrahigh vacuum chamber, we have conducted the first experiments under identical thermal, background, and surface preparation conditions to compare Ge(001) homoepitaxial growth morphology in PLD and MBE. We find that in PLD with low kinetic energy and in MBE the film morphology evolves in a similar fashion: initially irregularly shaped mounds form, followed by pyramidal mounds with edges of the square-base along the <100> directions; the film roughness and mound separation increase with film thickness. In PLD with high kinetic energy, well-defined pyramidal mounds are not observed and the morphology rather resembles that of an ion-etched Ge(001) surface. The areal feature density is higher for PLD films than for MBE films grown at the same average growth rate and temperature. Furthermore, the dependence upon film thickness of roughness and feature separation differ for PLD and MBE. We attribute these differences to the higher yield of defect generation by energetic species in PLD.

  18. Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

    NASA Technical Reports Server (NTRS)

    Nouhi, A.; Radhakrishnan, G.; Katz, J.; Koliwad, K.

    1988-01-01

    Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

  19. Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeO{sub x} films grown by molecular beam deposition

    SciTech Connect

    Molle, Alessandro; Baldovino, Silvia; Fanciulli, Marco; Tsoutsou, Dimitra; Golias, Evangelos; Dimoulas, Athanasios

    2011-10-15

    Changes in the electron trapping at the interface between Ge substrates and LaGeO{sub x} films grown by atomic O assisted molecular beam deposition are inferred upon post deposition annealing treatment on the as-deposited films from electrically detected magnetic resonance (EDMR) spectroscopy and from the electrical response of Pt/LaGeO{sub x}/Ge metal oxide semiconductor (MOS) capacitors. The improved electrical performance of the MOS capacitors upon annealing is consistent with the EDMR detected reduction of oxide defects which are associated with GeO species in the LaGeO{sub x} layer as evidenced by x-ray photoelectron spectroscopy.

  20. Ion beam deposited protective films

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.

    1981-01-01

    Single or dual ion beam sources were used to deposit thin films for different applications. Metal and metal oxide films were evaluated as protective coatings for the materials. Film adherence was measured and the most promising films were then tested under environments similar to operating conditions. It was shown that some materials do protect die material (H-13 steel) and do reduce thermal fatigue. Diamondlike films have many useful applications. A series of experiments were conducted to define and optimize new approaches to the manufacture of such films. A dual beam system using argon and methane gases was developed to generate these films.

  1. Comparative study of LaNiO3/LaAlO3 heterostructures grown by pulsed laser deposition and oxide molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wrobel, F.; Mark, A. F.; Christiani, G.; Sigle, W.; Habermeier, H.-U.; van Aken, P. A.; Logvenov, G.; Keimer, B.; Benckiser, E.

    2017-01-01

    Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and the large band gap insulator LaAlO3 by atomic layer-by-layer molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) and compared their crystallinity and microstructure as revealed by high-resolution transmission electron microscopy images and resistivity. The MBE samples show a higher density of stacking faults but smoother interfaces and generally higher electrical conductivity. Our study identifies the opportunities and challenges of MBE and PLD growth and serves as a general guide for the choice of the deposition technique for perovskite oxides.

  2. Room temperature photoluminescence from In{sub x}Al{sub (1−x)}N films deposited by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Kong, W. Jiao, W. Y.; Kim, T. H.; Brown, A. S.; Mohanta, A.; Roberts, A. T.; Fournelle, J.; Losurdo, M.; Everitt, H. O.

    2014-09-29

    InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10–12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of In{sub x}Al{sub (1−x)}N were comparatively investigated for indium compositions ranging from x = 0.092 to 0.235, including x = 0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.

  3. Silicon Holder For Molecular-Beam Epitaxy

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.

    1993-01-01

    Simple assembly of silicon wafers holds silicon-based charge-coupled device (CCD) during postprocessing in which silicon deposited by molecular-beam epitaxy. Attains temperatures similar to CCD, so hotspots suppressed. Coefficients of thermal expansion of holder and CCD equal, so thermal stresses caused by differential thermal expansion and contraction do not develop. Holder readily fabricated, by standard silicon processing techniques, to accommodate various CCD geometries. Silicon does not contaminate CCD or molecular-beam-epitaxy vacuum chamber.

  4. Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy

    SciTech Connect

    Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella; Boniardi, Mattia; Redaelli, Andrea

    2015-01-12

    Here, we report on the electrical characterization of phase change memory cells containing a Ge{sub 3}Sb{sub 2}Te{sub 6} (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.

  5. Room-temperature ferromagneticlike behavior in Mn-implanted and postannealed InAs layers deposited by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    González-Arrabal, R.; González, Y.; González, L.; García-Hernández, M.; Munnik, F.; Martín-González, M. S.

    2009-04-01

    We report on the magnetic and structural properties of Ar- and Mn-implanted InAs epitaxial films grown on GaAs (100) by molecular beam epitaxy and the effect of rapid thermal annealing (RTA) for 30 s at 750 °C. Channeling particle induced x-ray emission (PIXE) experiments reveal that after Mn implantation almost all Mn atoms are substitutional in the In site of the InAs lattice, like in a diluted magnetic semiconductor. All of these samples show diamagnetic behavior. However, after RTA treatment the Mn-InAs films exhibit room-temperature magnetism. According to PIXE measurements the Mn atoms are no longer substitutional. When the same set of experiments was performed with Ar as implantation ion, all of the layers present diamagnetism without exception. This indicates that the appearance of room-temperature ferromagneticlike behavior in the Mn-InAs-RTA layer is not related to lattice disorder produced during implantation but to a Mn reaction produced after a short thermal treatment. X-ray diffraction patterns and Rutherford backscattering measurements evidence the segregation of an oxygen-deficient MnO2 phase (nominally MnO1.94) in the Mn-InAs-RTA epitaxial layers which might be the origin of the room-temperature ferromagneticlike response observed.

  6. Room-temperature ferromagneticlike behavior in Mn-implanted and postannealed InAs layers deposited by molecular beam epitaxy

    SciTech Connect

    Gonzalez-Arrabal, R.; Gonzalez, Y.; Gonzalez, L.; Martin-Gonzalez, M. S.; Munnik, F.

    2009-04-01

    We report on the magnetic and structural properties of Ar- and Mn-implanted InAs epitaxial films grown on GaAs (100) by molecular beam epitaxy and the effect of rapid thermal annealing (RTA) for 30 s at 750 deg. C. Channeling particle induced x-ray emission (PIXE) experiments reveal that after Mn implantation almost all Mn atoms are substitutional in the In site of the InAs lattice, like in a diluted magnetic semiconductor. All of these samples show diamagnetic behavior. However, after RTA treatment the Mn-InAs films exhibit room-temperature magnetism. According to PIXE measurements the Mn atoms are no longer substitutional. When the same set of experiments was performed with Ar as implantation ion, all of the layers present diamagnetism without exception. This indicates that the appearance of room-temperature ferromagneticlike behavior in the Mn-InAs-RTA layer is not related to lattice disorder produced during implantation but to a Mn reaction produced after a short thermal treatment. X-ray diffraction patterns and Rutherford backscattering measurements evidence the segregation of an oxygen-deficient MnO{sub 2} phase (nominally MnO{sub 1.94}) in the Mn-InAs-RTA epitaxial layers which might be the origin of the room-temperature ferromagneticlike response observed.

  7. Molecular-beam scattering

    SciTech Connect

    Vernon, M.F.

    1983-07-01

    The molecular-beam technique has been used in three different experimental arrangements to study a wide range of inter-atomic and molecular forces. Chapter 1 reports results of a low-energy (0.2 kcal/mole) elastic-scattering study of the He-Ar pair potential. The purpose of the study was to accurately characterize the shape of the potential in the well region, by scattering slow He atoms produced by expanding a mixture of He in N/sub 2/ from a cooled nozzle. Chapter 2 contains measurements of the vibrational predissociation spectra and product translational energy for clusters of water, benzene, and ammonia. The experiments show that most of the product energy remains in the internal molecular motions. Chapter 3 presents measurements of the reaction Na + HCl ..-->.. NaCl + H at collision energies of 5.38 and 19.4 kcal/mole. This is the first study to resolve both scattering angle and velocity for the reaction of a short lived (16 nsec) electronic excited state. Descriptions are given of computer programs written to analyze molecular-beam expansions to extract information characterizing their velocity distributions, and to calculate accurate laboratory elastic-scattering differential cross sections accounting for the finite apparatus resolution. Experimental results which attempted to determine the efficiency of optically pumping the Li(2/sup 2/P/sub 3/2/) and Na(3/sup 2/P/sub 3/2/) excited states are given. A simple three-level model for predicting the steady-state fraction of atoms in the excited state is included.

  8. Molecular Beam Epitaxy of

    NASA Astrophysics Data System (ADS)

    Hsieh, Kuan Hsiung

    Ga(,0.48)In(,0.52)As recently emerges as a promising material for high speed applications. It also has a direct bandgap with gap energy suitable for optical applications. It is the purpose of this thesis to grow high quality Ga(,0.47)In(,0.53)As, lattice-matched Al(,0.48)In(,0.52)As and heterojunction structures by molecular beam epitaxy technique for applications in the areas of modulation-doped high mobility devices and internal photoemission Schottky diodes for infrared detection. Single crystal Al metal deposition on GaInAs by MBE is also studied for its electrical properties. Mobility enhancement has been demonstrated in modulation-doped structures at low temperatures. Very high mobilities were obtained: 10,900 cm('2)/Vs at room temperature, 55,500 cm('2)/Vs at 77K and 70,200 cm('2)/Vs at 10K with corresponding two-dimensional electron gas densities greater than 1 x 10('12) l/cm('2). The quality of Ga(,0.47)In(,0.53)As and the parallel conduction in this material are the limiting factors in its mobility. A new ohmic contact phenomenon has been observed in the MBE single crystal Al metal on Ga(,0.47)In(,0.53)AS samples. Its contact resistivity is measured to be as small as 1 x 10('-6) (OMEGA)-cm('2). The Fermi-level pinning near the conduction band edge might be caused by the interface defects. A planar doping technique has been employed to enhance the built-in barrier height to a value of about 0.5 eV in the single crystal Al on n-p('+)-n-Ga(,0.47)In(,0.52)As structures. This novel quasi-Schottky diode also shows a forward ideal factor of 1.03. As for optical detectors, four kinds of diodes were made for internal photoemission studies: Au Schottky on Ga(,0.47)In(,0.53)As in the wavelength range of 1.9 (mu)m to 2.5 (mu)m, Au Schottky on Al(,0.48)In(,0.52)As in 1.1 (mu)m to 2.0 (mu)m range, single crystal Al on (Al(,0.8)Ga(,0.2))(,0.48)In(,0.52)As with improved quantum yields and lastly a Ga(,0.47)In(,0.53)As/Al(,0.48)In(,0.52)As heterojunction with a measured

  9. Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition

    NASA Astrophysics Data System (ADS)

    Gammon, P. M.; Pérez-Tomás, A.; Jennings, M. R.; Shah, V. A.; Boden, S. A.; Davis, M. C.; Burrows, S. E.; Wilson, N. R.; Roberts, G. J.; Covington, J. A.; Mawby, P. A.

    2010-06-01

    In this article, we report on the physical and electrical nature of Ge/SiC heterojunction layers that have been formed by molecular beam epitaxy (MBE) deposition. Using x-ray diffraction, atomic force microscopy, and helium ion microscopy, we perform a thorough analysis of how MBE growth conditions affect the Ge layers. We observe the layers developing from independent islands at thicknesses of 100 nm to flat surfaces at 300 nm. The crystallinity and surface quality of the layer is shown to be affected by the deposition parameters and, using a high temperature deposition and a light dopant species, the layers produced have large polycrystals and hence a low resistance. The p-type and n-type layers, 300 nm thick are formed into Ge/SiC heterojunction mesa diodes and these are characterized electrically. The polycrystalline diodes display near ideal diode characteristics (n <1.05), low on resistance and good reverse characteristics. Current-voltage (I-V) measurements at varying temperature prove that all the layers have two-dimensional fluctuations in the Schottky barrier height (SBH) due to inhomogeneities at the heterojunction interface. Capacitance-voltage analysis and the SBH size extracted from I-V analysis suggest strongly that interface states are present at the surface causing Fermi-level pinning throughout the bands. A simple model is used to quantify the concentration of interface states at the surface.

  10. Strong affinity of hydrogen for the GaN(000-1) surface: Implications for molecular beam epitaxy and metalorganic chemical vapor deposition

    SciTech Connect

    Northrup, J.E.; Neugebauer, J.

    2004-10-18

    The stabilities of clean and hydrogen covered GaN(000-1) surfaces are determined using density functional theory together with a finite temperature thermodynamics approach. Hydrogen has an extremely high affinity for the N-face surface: Even under ultrahigh vacuum conditions as realized in molecular beam epitaxial growth, with a residual hydrogen pressure of 10{sup -12} atm, the hydrogen terminated surface is, for very N-rich conditions, more stable than any clean surface. A transition to a surface covered by a Ga adlayer is predicted to occur as the Ga chemical potential increases. In typical metalorganic chemical vapor deposition conditions the (000-1) surface is predicted to be covered by 0.75 monolayers of hydrogen. The slower growth rate on the (000-1) surface in comparison to the (0001) surface is attributed to low adsorption of N on the H-covered (000-1) surface.

  11. Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Browne, David A.; Fireman, Micha N.; Mazumder, Baishakhi; Kuritzky, Leah Y.; Wu, Yuh-Renn; Speck, James S.

    2017-02-01

    The results of vertical transport through AlGaN heterobarriers are presented for ammonia molecular beam epitaxy (NH3-MBE) on c-plane GaN on sapphire templates and on m-plane bulk GaN substrates, as well as by metalorganic chemical vapor deposition (MOCVD) on m-plane bulk GaN substrates. Experiments were performed to determine the role of the AlGaN alloy as an effective barrier to vertical transport, which is an essential component of both optoelectronic and power electronic devices. The alloy composition, thickness, and doping levels of the AlGaN layers, as well as substrate orientation, were systematically varied to examine their influence on electron transport. Atom probe tomography (APT) was used to directly determine the alloy composition at the atomic scale to reveal the presence of random alloy fluctuations which provides insight into the nature of the observed transport.

  12. Improvements in Ionized Cluster-Beam Deposition

    NASA Technical Reports Server (NTRS)

    Fitzgerald, D. J.; Compton, L. E.; Pawlik, E. V.

    1986-01-01

    Lower temperatures result in higher purity and fewer equipment problems. In cluster-beam deposition, clusters of atoms formed by adiabatic expansion nozzle and with proper nozzle design, expanding vapor cools sufficiently to become supersaturated and form clusters of material deposited. Clusters are ionized and accelerated in electric field and then impacted on substrate where films form. Improved cluster-beam technique useful for deposition of refractory metals.

  13. Valved molecular beam skimmer

    NASA Astrophysics Data System (ADS)

    Marceca, Ernesto; Becker, Jörg A.; Hensel, Friedrich

    1997-08-01

    Under routine source conditions, the optimum nozzle-skimmer distance to achieve maximum molecular beam intensities is within the range of a few millimeters. In cases where double skimming is additionally required, the distance between the skimmers should be kept small in order to sample a sufficiently large solid angle of the beam and hence maintain a good enough intensity. These two facts make it normally difficult to isolate the first from the second expansion chamber using a commercial vacuum gate valve due to the lack of remaining space. This note presents the design of a vacuum-tight valve which allows the aperture of a skimmer to be closed by plugging a needle directly against its internal conical wall. The valve can be driven manually or pneumatically from outside the vacuum chamber. The helium conductance of the valve was measured to be better than 1×10-8 mbar×l×s-1 for a helium partial pressure difference of 1 bar.

  14. Delayed Shutters For Dual-Beam Molecular Epitaxy

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J.; Liu, John L.; Hancock, Bruce

    1989-01-01

    System of shutters for dual-molecular-beam epitaxy apparatus delays start of one beam with respect to another. Used in pulsed-beam equipment for deposition of low-dislocation layers of InAs on GaAs substrates, system delays application of arsenic beam with respect to indium beam to assure proper stoichiometric proportions on newly forming InAs surface. Reflectance high-energy electron diffraction (RHEED) instrument used to monitor condition of evolving surface of deposit. RHEED signal used to time pulsing of molecular beams in way that minimizes density of defects and holds lattice constant of InAs to that of GaAs substrate.

  15. Delayed Shutters For Dual-Beam Molecular Epitaxy

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J.; Liu, John L.; Hancock, Bruce

    1989-01-01

    System of shutters for dual-molecular-beam epitaxy apparatus delays start of one beam with respect to another. Used in pulsed-beam equipment for deposition of low-dislocation layers of InAs on GaAs substrates, system delays application of arsenic beam with respect to indium beam to assure proper stoichiometric proportions on newly forming InAs surface. Reflectance high-energy electron diffraction (RHEED) instrument used to monitor condition of evolving surface of deposit. RHEED signal used to time pulsing of molecular beams in way that minimizes density of defects and holds lattice constant of InAs to that of GaAs substrate.

  16. Ion-beam assisted, electron-beam physical vapor deposition

    SciTech Connect

    Singh, J.

    1996-12-01

    Electron beam-physical vapor deposition (EB-PVD) is a relatively new technology that has overcome some of the difficulties associated with chemical vapor deposition, physical vapor deposition, and thermal spray processes. In the EB-PVD process, focused high-energy electron beams generated from electron guns are directed to melt and evaporate ingots, as well as preheat the substrate inside a vacuum chamber. By adding the assistance of ion beams to the process, coating density and adhesion are improved, while costs are reduced. This article describes physical vapor deposition and ion-beam processes, explains the advantages of EB-PVD, shows how ion beams optimize the benefits of EB-PVD, and enumerates a variety of applications.

  17. The effect of laser energy on V2O5 thin film growth prepared by laser assisted molecular beam deposition

    NASA Astrophysics Data System (ADS)

    Abdel Samad, B.; Ashrit, P. V.

    2014-09-01

    Vanadium pentoxide V2O5 thin films were grown on glass substrates by the LAMBD deposition system with different laser energies. The structure, composition and optical properties of the films have been investigated with atomic force microscopy, x-ray photoemission spectroscopy, ellipsometry and the transmittance analysis. Upon the increase of laser energy, the results showed that the changes in the optical constants are consistent with the thickness changes of the film. The refractive index increases and the absorption coefficient increases when the laser energy increases. The AFM analysis showed a change of the roughness and structure of the deposited films at different laser energies. The prepared films deposited by LAMBD showed interesting properties with correct V2O5 phase without need of annealing after deposition.

  18. Photoelectron photoion molecular beam spectroscopy

    SciTech Connect

    Trevor, D.J.

    1980-12-01

    The use of supersonic molecular beams in photoionization mass spectroscopy and photoelectron spectroscopy to assist in the understanding of photoexcitation in the vacuum ultraviolet is described. Rotational relaxation and condensation due to supersonic expansion were shown to offer new possibilities for molecular photoionization studies. Molecular beam photoionization mass spectroscopy has been extended above 21 eV photon energy by the use of Stanford Synchrotron Radiation Laboratory (SSRL) facilities. Design considerations are discussed that have advanced the state-of-the-art in high resolution vuv photoelectron spectroscopy. To extend gas-phase studies to 160 eV photon energy, a windowless vuv-xuv beam line design is proposed.

  19. Study of the Mechanism of Electrical Conductivity in Molecular Beam- Deposited Polymer Films of Ethylene on Silicon Substrates

    DTIC Science & Technology

    1988-05-25

    the He cryostat.... 10 Figure 7. Van der Pauw sample geometry and connections: a) basic electrical circuit for measuring sample resistivity; b) high...dictated by the Van der Pauw method ............................ 20 v viv vl0 ABSTRACT 4 he following report describes experiments performed on a molecular...function of sample and electrode geometry, a four-probe method was used, based on a technique described by Van der Pauw .3 The method consists of

  20. Optical and Structural Properties of Microcrystalline GaN on an Amorphous Substrate Prepared by a Combination of Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

    SciTech Connect

    Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu; Park, Kwangwook; Kim, Ci-Hyun; Lee, Dong-Seon; Jho, Young-Dahl; Bae, Si-Young; Lee, Yong-Tak

    2016-05-01

    Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.

  1. Photoconduction efficiencies and dynamics in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: A comparison study

    NASA Astrophysics Data System (ADS)

    Chen, R. S.; Tsai, H. Y.; Huang, Y. S.; Chen, Y. T.; Chen, L. C.; Chen, K. H.

    2012-09-01

    The normalized gains, which determines the intrinsic photoconduction (PC) efficiencies, have been defined and compared for the gallium nitride (GaN) nanowires (NWs) grown by chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). By excluding the contributions of experimental parameters and under the same light intensity, the CVD-grown GaN NWs exhibit the normalized gain which is near two orders of magnitude higher than that of the MBE-ones. The temperature-dependent time-resolved photocurrent measurement further indicates that the higher photoconduction efficiency in the CVD-GaN NWs is originated from the longer carrier lifetime induced by the higher barrier height (ϕB = 160 ± 30 mV) of surface band bending. In addition, the experimentally estimated barrier height at 20 ± 2 mV for the MBE-GaN NWs, which is much lower than the theoretical value, is inferred to be resulted from the lower density of charged surface states on the non-polar side walls.

  2. Field-effect transistors with LaAlO3 and LaAlOxNy gate dielectrics deposited by laser molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lu, X. B.; Lu, H. B.; Chen, Z. H.; Zhang, X.; Huang, R.; Zhou, H. W.; Wang, X. P.; Nguyen, B. Y.; Wang, C. Z.; Xiang, W. F.; He, M.; Cheng, B. L.

    2004-10-01

    High permittivity LaAlO3 (LAO) and LaAlOxNy (LAON) thin films have been deposited directly on a Si(100) substrate using a laser molecular-beam epitaxy technique. Metal-oxide-silicon field-effect transistors (MOSFETs) are fabricated using such LAO and LAON thin films as gate dielectrics and well-behaved transistor characteristics have been observed. High-resolution transmission electron microscopy observations indicate that LAO thin films can remain amorphous structure even after annealing at 1000°C. The small equivalent oxide thickness (EOT) of 17Å is achieved for 75Å LAO film with an effective dielectric constant of 17.2±1 for the whole gate stack. Furthermore, a smaller EOT, larger drive current, and lower subthreshold slope have been observed for devices with the LAON thin film. For all the devices, the gate leakage currents are at least two orders of magnitude lower than that of the same electrical thickness SiO2. Reasonable subthreshold slopes of 248 and 181mV /dec were obtained for MOSFETs with LAO and LAON films, respectively.

  3. Characterization of high-{kappa} LaLuO{sub 3} thin film grown on AlGaN/GaN heterostructure by molecular beam deposition

    SciTech Connect

    Yang Shu; Huang Sen; Chen Hongwei; Chen, Kevin J.; Schnee, Michael; Zhao Qingtai; Schubert, Juergen

    2011-10-31

    We report the study of high-dielectric-constant (high-{kappa}) dielectric LaLuO{sub 3} (LLO) thin film that is grown on AlGaN/GaN heterostructure by molecular beam deposition (MBD). The physical properties of LLO on AlGaN/GaN heterostrucure have been investigated with atomic force microscopy, x-ray photoelectron spectroscopy, and TEM. It is revealed that the MBD-grown 16 nm-thick LLO film is polycrystalline with a thin ({approx}2 nm) amorphous transition layer at the LLO/GaN interface. The bandgap of LLO is derived as 5.3 {+-} 0.04 eV from O1s energy loss spectrum. Capacitance-voltage (C-V) characteristics of a Ni-Au/LLO/III-nitride metal-insulator-semiconductor diode exhibit small frequency dispersion (<2%) and reveal a high effective dielectric constant of {approx}28 for the LLO film. The LLO layer is shown to be effective in suppressing the reverse and forward leakage current in the MIS diode. In particular, the MIS diode forward current is reduced by 7 orders of magnitude at a forward bias of 1 V compared to a conventional Ni-Au/III-nitride Schottky diode.

  4. Optical and structural properties of microcrystalline GaN on an amorphous substrate prepared by a combination of molecular beam epitaxy and metal-organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu; Park, Kwangwook; Kim, Ci-Hyun; Lee, Dong-Seon; Jho, Young-Dahl; Bae, Si-Young; Lee, Yong-Tak

    2016-05-01

    Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.

  5. Chopped molecular beam multiplexing system

    NASA Technical Reports Server (NTRS)

    Adams, Billy R. (Inventor)

    1986-01-01

    The integration of a chopped molecular beam mass spectrometer with a time multiplexing system is described. The chopping of the molecular beam is synchronized with the time intervals by a phase detector and a synchronous motor. Arithmetic means are generated for phase shifting the chopper with respect to the multiplexer. A four channel amplifier provides the capacity to independently vary the baseline and amplitude in each channel of the multiplexing system.

  6. Core and grain boundary sensitivity of tungsten-oxide sensor devices by molecular beam assisted particle deposition

    NASA Astrophysics Data System (ADS)

    Huelser, T. P.; Lorke, A.; Ifeacho, P.; Wiggers, H.; Schulz, C.

    2007-12-01

    In this study, we investigate the synthesis of WO3 and WOx (2.6≥x≤2.8) by adding different concentrations of tungsten hexafluoride (WF6) into a H2/O2/Ar premixed flame within a low-pressure reactor equipped with a particle-mass spectrometer (PMS). The PMS results show that mean particle diameters dp between 5 and 9 nm of the as-synthesized metal-oxides can be obtained by varying the residence time and precursor concentration in the reactor. This result is further validated by N2 adsorption measurements on the particle surface, which yielded a 91 m2/g surface area, corresponding to a spherical particle diameter of 9 nm (Brunauer-Emmett-Teller technique). H2/O2 ratios of 1.6 and 0.63 are selected to influence the stoichiometry of the powders, resulting in blue-colored WOx and white WO3 respectively. X-ray diffraction (XRD) analysis of the as-synthesized materials indicates that the powders are mostly amorphous, and the observed broad reflexes can be attributed to the orthorhombic structure of β-WO3. Thermal annealing at 973 K for 3 h in air resulted in crystalline WO3 comprised of both monoclinic and orthorhombic phases. The transmission electron microscope micrograph analysis shows that the particles exhibit spherical morphology with some degree of agglomeration. Impedance spectroscopy is used for the electrical characterization of tungsten-oxide thin films with a thickness of 50 nm. Furthermore, the temperature-dependent gas-sensing properties of the material deposited on interdigital capacitors are investigated. Sensitivity experiments reveal two contributions to the overall sensitivity, which result from the surface and the core of each particle.

  7. Ion beam deposition in materials research

    NASA Astrophysics Data System (ADS)

    Zuhr, R. A.; Pennycook, S. J.; Noggle, T. S.; Herbots, N.; Haynes, T. E.; Appleton, B. R.

    1989-02-01

    Ion beam deposition (IBD) is the direct formation of thin films using a low-energy (tens of eV) mass-analyzed ion beam. The process allows depositions in which the energy, isotopic species, deposition rate, defect production, and many other beam and sample parameters can be accurately controlled. This paper will review recent research at ORNL on the IBD process and the effects of deposition parameters on the materials properties of deposited thin films, epitaxial layers, and isotopic heterostructures. A variety of techniques including ion scattering/channeling, cross-sectional transmission electron microscopy, scanning electron microscopy, and Auger spectroscopy has been used for analysis. The fabrication of isotopic heterostructures of 74Ge and 30Si will be discussed, as well as the fabrication of metal and semiconductor overlayers on Si and Ge. The use of IBD for low-temperature epitaxy of 30Si on Si and 76Ge on Ge will be presented. The use of self-ion sputter cleaning and in situ reactive ion cleaning as methods for preparing single-crystal substrates for epitaxial deposition will be discussed. Examples of IBD formation of oxides and suicides on Si at low temperatures will also be presented.

  8. Molecular Beam Epitaxy,

    DTIC Science & Technology

    1981-07-30

    between the two types. In the former case, molecules can grow directly either at positions of low potential energy on the surface of substrate of...molecules ave re-evaporated fi, a the surface arid carried away by the vacum systc::,. Withln the r’ nje Let;. the onset of deposition and the constant... energy electron diffrac- tion, high energy electro diffraction and Aug.er spectrometers should be installed as surface analysis instruments. The present

  9. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1986-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  10. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  11. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanisms and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  12. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1985-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  13. Molecular-Beam-Epitaxy Program

    NASA Technical Reports Server (NTRS)

    Sparks, Patricia D.

    1988-01-01

    Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.

  14. Dual ion beam assisted deposition of biaxially textured template layers

    DOEpatents

    Groves, James R.; Arendt, Paul N.; Hammond, Robert H.

    2005-05-31

    The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be deposited without degradation of the desired properties by the material. The ability to deposit thicker layers without loss of properties provides a significantly broader deposition window for the process.

  15. Focused electron beam induced deposition of pure SIO II

    NASA Astrophysics Data System (ADS)

    Perentes, Alexandre; Hoffmann, Patrik; Munnik, Frans

    2007-02-01

    Focused electron beam induced processing (FEBID) equipments are the "all in one" tools for high resolution investigation, and modification of nano-devices. Focused electron beam induced deposition from a gaseous precursor usually results in a nano-composite sub-structured material, in which the interesting material is embedded in an amorphous carbonaceous matrix. Using the Hydrogen free tetraisocyanatosilane Si(NCO) 4 molecule as Si source, we show how a controlled oxygen flux, simultaneously injected with the precursor vapors, causes contaminants to vanish from the FEB deposits obtained and leads to the deposition of pure SiO II. The chemical composition of the FEBID material could be controlled from SiC IINO 3 to SiO II, the latter containing undetectable foreign element contamination. The [O II] / [TICS] ratio needed to obtain SiO II in our FEB deposition equipment is larger than 300. The evolution of the FEBID material chemical composition is presented as function of the [O II] / [TICS] molecular flux ratios. A hypothetical decomposition pathway of this silane under these conditions is discussed based on the different species formed under electron bombardment of TICS. Transmission electron microscopy investigations demonstrated that the deposited oxide is smooth (roughness sub 2nm) and amorphous. Infrared spectroscopy confirmed the low concentration of hydroxyl groups. The Hydrogen content of the deposited oxide, measured by elastic recoil detection analysis, is as low as 1 at%. 193nm wavelength AIMS investigations of 125nm thick SiO II pads (obtained with [O II] / [TICS] = 325) showed an undetectable light absorption.

  16. The nucleation and growth of silicon thin films on silicate glasses of variable composition using supersonic gas source molecular beam deposition

    NASA Astrophysics Data System (ADS)

    Schroeder, T. W.; Engstrom, J. R.

    2004-06-01

    Supersonic molecular beam techniques have been used to study the nucleation and growth of Si thin films on glass surfaces of variable composition using Si2H6 as the precursor to film growth. We have examined, in particular, the early stages of growth using scanning electron microscopy. Making use of molecular beam techniques to control accurately the precursor exposure we have examined trends in the evolution of the Si island density as a function of the composition of the glass, x, in (2ṡSiO2)1-x(Al2O3ṡCaO)x. The silica composition (1-x) for these samples was varied between 0.25 and 0.75, and comparisons were also made to the nucleation of Si on SiO2 thin films made by thermal oxidation and Corning 1737 display glass. We have found that the incubation time τinc varies only weakly with substrate composition, increasing by only a factor of 3 over the range 1-x=0.25-1.0. Examination of a later stage of nucleation and growth, the time for coalescence, τcoal, indicated a stronger dependence on composition, and this metric varied by a factor of 8 over the same range of composition. These results indicate that the intrinsic reactivity of the surface scales with the silica content of the surface. The maximum island density shows a much stronger, superlinear dependence on silica content, increasing by a factor of 15 as 1-x increased from 0.25 to 1.0. For the silica rich compositions, i.e., SiO2 and 1737, Nmax is essentially independent of substrate temperature and the results can be interpreted by a model for nucleation that is purely heterogeneous, and where surface diffusion plays a minimal role. In contrast, on the most silica dilute glass surface (1-x=0.25), Nmax exhibits an Arrhenius temperature dependence with an apparent activation energy of 1.1 eV. Coupled with the observation of a broader island size distribution on this surface, we conclude that surface diffusion plays a role in nucleation and growth on this silica dilute surface, possibly via Ostwald

  17. Molecular beam source for high vapor pressure materials

    SciTech Connect

    Myers, T.H.; Schetzina, J.F.

    1982-02-01

    A molecular beam source for deposition of high vapor pressure materials in MBE systems is described. The source consists of a collimating effusion cell of original design which is heated by a temperature-controlled Radak II oven (Luxel Corporation). Construction details of the source are given along with calibration and performance data.

  18. 14th international symposium on molecular beams

    SciTech Connect

    Not Available

    1992-01-01

    This report discusses research being conducted with molecular beams. The general topic areas are as follows: Clusters I; reaction dynamics; atomic and molecular spectroscopy; clusters II; new techniques; photodissociation dynamics; and surfaces.

  19. 14th international symposium on molecular beams

    SciTech Connect

    Not Available

    1992-09-01

    This report discusses research being conducted with molecular beams. The general topic areas are as follows: Clusters I; reaction dynamics; atomic and molecular spectroscopy; clusters II; new techniques; photodissociation & dynamics; and surfaces.

  20. Investigation on the electrical transport properties of highly (00l)-textured Sb2Te3 films deposited by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Zhang, Xiangpeng; Zeng, Zhigang; Shen, Chao; Zhang, Ziqiang; Wang, Zhichong; Lin, Cong; Hu, Zhiyu

    2014-01-01

    Highly (00l)-textured antimony telluride films were fabricated using molecular beam epitaxy (MBE) on Si (111) substrate at 280 °C. X-ray diffraction analysis implying the samples have good crystalline quality, simultaneously, the grain sizes coarsening with increasing thickness. The results of Hall coefficient measurement demonstrated that the carrier concentration and mobility are strongly affected by grain boundaries and microcrystalline internal defects. It was found that the grain boundaries play a primary factor influencing the carrier concentration in thinner film. At room temperature, the results in a maximum mobility value of 305 cm2/Vs for 121-nm-thick film, and the electrical conductivity increased from 425.7 S/cm to 1036 S/cm as the thickness varied from 28 nm to 121 nm. In the range of room temperature to 150 °C, the resistivity almost linearly increased with increasing temperature. This may be explained by low concentration of impurities or defects and shallow impurity band. For difference thickness films, temperature coefficients of resistivity are substantially equal, and the values are about 3 ˜ 4 μΩ ṡcm/K.

  1. Focused electron beam induced deposition: A perspective

    PubMed Central

    Porrati, Fabrizio; Schwalb, Christian; Winhold, Marcel; Sachser, Roland; Dukic, Maja; Adams, Jonathan; Fantner, Georg

    2012-01-01

    Summary Background: Focused electron beam induced deposition (FEBID) is a direct-writing technique with nanometer resolution, which has received strongly increasing attention within the last decade. In FEBID a precursor previously adsorbed on a substrate surface is dissociated in the focus of an electron beam. After 20 years of continuous development FEBID has reached a stage at which this technique is now particularly attractive for several areas in both, basic and applied research. The present topical review addresses selected examples that highlight this development in the areas of charge-transport regimes in nanogranular metals close to an insulator-to-metal transition, the use of these materials for strain- and magnetic-field sensing, and the prospect of extending FEBID to multicomponent systems, such as binary alloys and intermetallic compounds with cooperative ground states. Results: After a brief introduction to the technique, recent work concerning FEBID of Pt–Si alloys and (hard-magnetic) Co–Pt intermetallic compounds on the nanometer scale is reviewed. The growth process in the presence of two precursors, whose flux is independently controlled, is analyzed within a continuum model of FEBID that employs rate equations. Predictions are made for the tunability of the composition of the Co–Pt system by simply changing the dwell time of the electron beam during the writing process. The charge-transport regimes of nanogranular metals are reviewed next with a focus on recent theoretical advancements in the field. As a case study the transport properties of Pt–C nanogranular FEBID structures are discussed. It is shown that by means of a post-growth electron-irradiation treatment the electronic intergrain-coupling strength can be continuously tuned over a wide range. This provides unique access to the transport properties of this material close to the insulator-to-metal transition. In the last part of the review, recent developments in mechanical strain

  2. Nanoscale molecular device fabrication via solution and vapor phase deposition

    NASA Astrophysics Data System (ADS)

    Gergel-Hackett, Nadine

    This work describes the fabrication of molecular electronic devices using solution phase and vapor phase assembly methods. The project was motivated by the existing limits of molecular electronics including: a lack of reproducible nanoscale molecular test devices, limited device fabrication techniques that resulted in low yields, and molecular devices that lacked potential for integration with traditional CMOS components. To address these issues, I first designed and fabricated a nanoscale molecular test device using traditional solution phase assembly methods. This test device was shown to be effective and reproducible by characterizing molecules with well-established electrical behaviors. I then used this test device to investigate the electrical behavior of an oligo(phenylene ethynylene) molecule with a nitro sidegroup, known as the nitro molecule. This molecule exhibited interesting electrical behavior with the potential for use in memory and logic devices. In order to better understand the behavioral variations observed from the nitro molecule, I investigated the effect that different molecular environments had on its electrical behavior. Next, molecular device fabrication procedures were improved by developing a method of vapor phase assembly. For this vapor phase deposition, I modified an existing ultra-high vacuum molecular beam epitaxy chamber and developed procedures for purifying the organic molecules prior to assembly. Vapor phase deposition was used to assemble single monolayers of various conducting molecules on gold substrates and the monolayers were characterized to confirm that they were chemisorbed, dense, uncontaminated, and ordered. Nanowell test devices that were fabricated via vapor phase deposition showed the expected electrical characteristics - verifying the effectiveness of vapor phase assembly for molecular electronic device fabrication. I also used vapor phase deposition to assemble conducting molecules on silicon substrates. This switch

  3. Patterned electrochemical deposition of copper using an electron beam

    SciTech Connect

    Heijer, Mark den; Shao, Ingrid; Reuter, Mark C.; Ross, Frances M.; Radisic, Alex

    2014-02-01

    We describe a technique for patterning clusters of metal using electrochemical deposition. By operating an electrochemical cell in the transmission electron microscope, we deposit Cu on Au under potentiostatic conditions. For acidified copper sulphate electrolytes, nucleation occurs uniformly over the electrode. However, when chloride ions are added there is a range of applied potentials over which nucleation occurs only in areas irradiated by the electron beam. By scanning the beam we control nucleation to form patterns of deposited copper. We discuss the mechanism for this effect in terms of electron beam-induced reactions with copper chloride, and consider possible applications.

  4. Molecular beams: our legacy from Otto Stern

    NASA Astrophysics Data System (ADS)

    Ramsey, N. F.

    1988-06-01

    It is an honor to contribute to this celebration of the hundredth anniversary of the birth of Otto Stern, who developed molecular beams to become one of the most nowerful and fruitful physics research methods.

  5. Deposition and surface treatment with intense pulsed ion beams

    SciTech Connect

    Olson, J.C.; Davis, H.A.; Rej, D.J.; Waganaar, W.J.; Stinnett, R.W.; McIntyre, D.C.

    1995-02-08

    Intense pulsed ion beams (500 keV, 30 kA, 0.5 {mu}s) are being investigated for materials processing. Demonstrated and potential applications include film deposition, glazing and joining, alloying and mixing, cleaning and polishing, corrosion improvement, polymer surface treatments, and nanophase powder synthesis. Initial experiments at Los Alamos have emphasized thin-film formation by depositing beam ablated target material on substrates. We have deposited films with complex stoichiometry such as YBa{sub 2}Cu{sub 3}O{sub 7-x}, and formed diamond-like-carbon films. Instantaneous deposition rates of 1 mm/sec have been achieved because of the short ion range (typically 1{mu}m), excellent target coupling, and the inherently high energy of these beams. Currently the beams are produced in single shot uncomplicated diodes with good electrical efficiency. High-voltage modulator technology and diodes capable of repetitive firing, needed for commercial application, are being developed.

  6. Fifty-five years of molecular beams

    SciTech Connect

    Ramsey, N.F.

    1993-05-01

    The history of molecular beams since the invention of molecular beam magnetic resonance is discussed. Rabi`s 1937 theoretical paper on resonance transitions led Rabi, Zacharias, Millman and Kusch to measure various nuclear magnetic moments by magnetic resonance. Kellogg, Rabi, Ramsey and Zacharias found a multiple line radio frequency spectrum in H{sub 2}, D{sub 2}, and HD which enabled them to measure not only the nuclear magnetic moments but also internal molecular interactions including that of the deuteron electric quadrupole moment. The method was successfully extended to atoms. In 1947 Nafe, Nelson and Rabi found that the observed hyperfine separations in atomic hydrogen and deuterium differed from theoretical predictions and Lamb and Retherford soon thereafter observed the large Lamb shift in the atomic fine structures; these two discoveries were the principal incentives for the development of QED, which was confirmed by Kusch`s measurement of the electron magnetic moment. Ramsey`s separated oscillatory field method increased the accuracy and frequency range of the resonance method and provided the basis for accurate atomic clocks. Townes and his associates used a molecular beam for the first Maser as did Goldenberg, Klepper and Ramsey for the atomic hydrogen maser. Many nuclear, atomic and molecular properties have been measured with the molecular beam magnetic resonance. Van der Waal`s molecules and highly excited Rydberg atoms have been examined. Laser spectroscopy has been extensively studied with atomic beams and lasers have been used for state selection and excitation. Wieman and others used atomic beams to study parity and time reversal symmetry. Atomic beams have been slowed by laser cooling and Phillips and others have shown that the atoms can be cooled to about one micro-Kelvin, well below the Doppler limit. Collision experiments between two beams, often from jet sources, provided extensive and detailed information about molecular interactions.

  7. Deposition of reactively ion beam sputtered silicon nitride coatings

    NASA Technical Reports Server (NTRS)

    Grill, A.

    1982-01-01

    An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

  8. Use of beam deflection to control an electron beam wire deposition process

    NASA Technical Reports Server (NTRS)

    Taminger, Karen M. (Inventor); Hofmeister, William H. (Inventor); Hafley, Robert A. (Inventor)

    2013-01-01

    A method for controlling an electron beam process wherein a wire is melted and deposited on a substrate as a molten pool comprises generating the electron beam with a complex raster pattern, and directing the beam onto an outer surface of the wire to thereby control a location of the wire with respect to the molten pool. Directing the beam selectively heats the outer surface of the wire and maintains the position of the wire with respect to the molten pool. An apparatus for controlling an electron beam process includes a beam gun adapted for generating the electron beam, and a controller adapted for providing the electron beam with a complex raster pattern and for directing the electron beam onto an outer surface of the wire to control a location of the wire with respect to the molten pool.

  9. Molecular-beam spectroscopy of interhalogen molecules

    SciTech Connect

    Sherrow, S.A.

    1983-08-01

    A molecular-beam electric-resonance spectrometer employing a supersonic nozzle source has been used to obtain hyperfine spectra of /sup 79/Br/sup 35/Cl. Analyses of these spectra and of microwave spectra published by other authors have yielded new values for the electric dipole moment and for the nuclear quadrupole coupling constants in this molecule. The new constants are significantly different from the currently accepted values. Van der Waals clusters containing chlorine monofluoride have been studied under various expansion conditions by the molecular-beam electric-deflection method. The structural possibilities indicated by the results are discussed, and cluster geometries are proposed.

  10. Ion beam assisted deposition of tribological coatings

    SciTech Connect

    Sartwell, B.D.

    1993-01-01

    TiN coatings 5 micrometers thick were deposited in UHV IBAD chamber onto M50 and Si substrates over a wide range of R (Ar-ion-to-Ti-atom ratio) values. Sputtering reduced the actual thickness at high R values, with two out of every three deposited Ti atoms being removed at R = 0.7. Because of charge exchange neutralization, it was possible to obtain coatings in the UHV IBAD system with properties equivalent to those deposited in the high vacuum IBAD system by using a higher apparent R value. Unless the extent of the charge exchange neutralization is known, it will not be possible to duplicate coating properties. Adhesion of the thick TiN coating deposited at R - 0.5 was equivalent to a magnetron sputtered TiN coating. Thick Cr[sub 2]O[sub 3] coatings were deposited onto M50 and Si substrates and wear testing was initiated. At high R values, sputtering prevented chemisorption of oxygen at surface. The wear process eliminated most of the surface topography.

  11. Modeling of iron oxide deposition by reactive ion beam sputtering

    SciTech Connect

    Puech, Laurent; Dubarry, Christophe; Ravel, Guillaume; Vito, Eric de

    2010-03-15

    An analytic model of deposition is applied on reactive ion beam sputtering to optimize the properties of iron oxide thin films. This model will be able to predict deposition rate and phase contents. Among its hypotheses, we assume oxygen adsorption at the surface of the target to explain variations of deposition rate for oxygen flow. This hypothesis is validated by chemical analyses on iron targets. An ellipsoidal distribution of probability is introduced to model sputtered matter distribution from iron target and to calculate sputtering yield. Comparison between experimental and calculated deposition rates validates previously assumed hypotheses.

  12. Comparison of InGaAs(100) Grown by Chemical Beam Epitaxy and Metal Organic Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Williams, M. D.; Greene, A. L.; Daniels-Race, T.; Lum, R. M.

    2000-01-01

    Secondary ion mass spectrometry is used to study the effects of substrate temperature on the composition and growth rate of InGaAs/InP(100) multilayers grown by chemical beam epitaxy, metal-organic chemical vapor deposition and solid source molecular beam epitaxy. The growth kinetics of the material grown by the different techniques are analyzed and compared.

  13. Comparison of InGaAs(100) Grown by Chemical Beam Epitaxy and Metal Organic Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Williams, M. D.; Greene, A. L.; Daniels-Race, T.; Lum, R. M.

    2000-01-01

    Secondary ion mass spectrometry is used to study the effects of substrate temperature on the composition and growth rate of InGaAs/InP(100) multilayers grown by chemical beam epitaxy, metal-organic chemical vapor deposition and solid source molecular beam epitaxy. The growth kinetics of the material grown by the different techniques are analyzed and compared.

  14. Molecular beam mass spectrometer development

    NASA Technical Reports Server (NTRS)

    Brock, F. J.; Hueser, J. E.

    1976-01-01

    An analytical model, based on the kinetics theory of a drifting Maxwellian gas is used to determine the nonequilibrium molecular density distribution within a hemispherical shell open aft with its axis parallel to its velocity. The concept of a molecular shield in terrestrial orbit above 200 km is also analyzed using the kinetic theory of a drifting Maxwellian gas. Data are presented for the components of the gas density within the shield due to the free stream atmosphere, outgassing from the shield and enclosed experiments, and atmospheric gas scattered off a shield orbiter system. A description is given of a FORTRAN program for computating the three dimensional transition flow regime past the space shuttle orbiter that employs the Monte Carlo simulation method to model real flow by some thousands of simulated molecules.

  15. An autoneutralizing neutral molecular beam gun

    NASA Astrophysics Data System (ADS)

    Delmore, J. E.; Appelhans, A. D.; Dahl, D. A.

    1990-01-01

    A high-energy (up to 28 keV) neutral molecular beam gun has been developed and put into routine use that takes advantage of the autoneutralization properties of the sulfur hexafluoride anion for the production of high-energy sulfur hexafluoride neutral molecules. The anions are produced in an electron-capture source, accelerated, and focused in a lens assembly designed to minimize residence time, allowed to drift at their terminal velocity for a suitable distance during which up to 30% auto-eject an electron, and all remaining charged particles are electrostatically skimmed, resulting in a focused neutral beam. Rasterable neutral beams focused to a 5-mm spot size up to 3 m from the source have been produced with beam currents up to 40 pA equivalent. Spot sizes of 1 mm can be produced with intensity levels of a few picoamperes equivalent.

  16. Characteristics of a direct metal ion beam deposition source

    NASA Astrophysics Data System (ADS)

    Kim, Daeil; Kim, Steven

    2002-07-01

    In this study, we examine the performance of a direct metal ion beam deposition (DMIBD) system which uses a Cs-mordenite pellet as the ion source. We describe design aspects of DMIBD and process parameters such as secondary ion yields, secondary ion energy distributions, secondary ion to atom arrival ratios and deposition rates for C, Al, Si, Ni, Cu, Ta, and W targets. During deposition, the secondary negative metal ion yield strongly depends on the primary Cs+ ion does and bombarding energy. Also, the deposition rate and ion to atom arrival ratios for various targets can be controlled by adjusting the primary Cs+ ion dose, Cs+ ion bombarding energy, and ion beam energy to fit the desired application. copyright 2002 American Vacuum Society.

  17. Zeeman-Sisyphus Deceleration of Molecular Beams

    NASA Astrophysics Data System (ADS)

    Fitch, Noah; Tarbutt, Mike

    2016-05-01

    Ultracold molecules are useful for testing fundamental physics and studying strongly-interacting quantum systems. One production method is via direct laser cooling in a magneto-optical trap (MOT). In this endeavor, one major challenge is to produce molecules below the MOT capture velocity. Established molecular beam deceleration techniques are poorly suited because they decelerate only a small fraction of a typical molecular pulse. Direct laser cooling is a natural choice, but is also problematic due to transverse heating and the associated molecule loss. I will present a new technique that we are developing, which we call Zeeman-Sisyphus deceleration and which shows great promise for preparing molecular beams for MOT loading. This technique decelerates molecules using a linear array of permanent magnets, along with lasers that periodically optically pump molecules between weak and strong-field seeking quantum states. Being time-independent, this method is well-suited for temporally extended molecular beams. Simultaneous deceleration and transverse guiding makes this approach attractive as an alternative to direct laser cooling. I will present our development of the Zeeman-Sisyphus decelerator and its application to a molecular MOT of CaF and an ultracold fountain of YbF.

  18. Contamination control in ion beam sputter-deposited films

    NASA Astrophysics Data System (ADS)

    Pearson, David I. C.; Pochon, Sebastien; Cooke, Mike

    2013-09-01

    The conventional wisdom to guarantee high purity thin films in IBSD has been to use a large vacuum chamber usually in excess of 1 m3. The chamber size was important to minimise the effect of reflected high energy particles from the target surface sputtering chamber materials onto the substrate and to allow the use of large targets to avoid beam overspill onto chamber furniture. An improved understanding of beam trajectories and re-sputtered material paths has allowed the deposition of thin films with very low metallic impurity content in a chamber volume below 0.5 m3. Thus, by optimizing the sputter ion source, target and substrate configuration, and by arranging suitable shielding made of an appropriate material in the process chamber, the levels of contaminants in the deposited films have been reduced to a minimum. With this optimum hardware arrangement, the ion beam process parameters were then optimized with respect to the ppm levels of contaminants measured in the films by SIMS analysis. Using the deposition of SiO2 as a standard material for DSIMS composition analysis and impurity level determination, it has been shown that our IBS deposition tool is capable of depositing films with contamination levels of <50ppm for the total of all metal impurities in the deposited films.

  19. Power deposition of deuteron beam in fast ignition

    NASA Astrophysics Data System (ADS)

    Azadifar, R.; Mahdavi, M.

    2017-02-01

    In ion fast ignition (FI) inertial confinement fusion (ICF), a laser accelerated ion beam called igniter provides energy required for ignition of a fuel pellet. The laser accelerated deuteron beam is considered as igniter. The deuteron beam with Maxwellian energy distribution produced at the distance d = 500 μm, from fuel surface, travels during time t = 20 ps and arrives with power P1D(t,TD) to the fuel surface. Then, the deuteron beam deposits its energy into fuel by Coulomb and nuclear interactions with background plasma particles during time t = 10 ps, with power P2D(t,TD,Tb). Since time and power of the two stages have same order, to calculate the total power deposited by igniter beam, both stages must be considered simultaneously. In this paper, the exact power of each stage has been calculated separately, and the total power Ptotal(t,TD,Tb) has been obtained. The obtained results show that the total power deposition Ptotal(t,TD,Tb) is significantly reduced due to reducing different temperature between projectile and target particles.

  20. Evolution of tungsten film deposition induced by focused ion beam

    NASA Astrophysics Data System (ADS)

    Langfischer, H.; Basnar, B.; Hutter, H.; Bertagnolli, E.

    2002-07-01

    Direct write metallization is an important approach for circuit modification and prototyping. We investigate the evolution of the chemical vapor deposition of tungsten induced by a 50 keV focused Ga+ ion beam. Time resolved imaging in combination with atomic force microscopy reveals that chemical vapor deposition of tungsten by focused ion beam proceeds via two clearly distinguishable regimes of layer growth. Deposition starts with the nucleation of nanoscale tungsten deposits scattered over the substrate surface. Despite local impacts of the ion beam within the irradiated area of the substrate the localization of the nucleation spots is not correlated to the scan path of the ion beam. The nanoscale tungsten particles preserve their position and typical shape during further deposition. Only after merging of the particles into a contiguous tungsten layer, does the second regime of growth characterized by deposition of tungsten on a tungsten surface set in. In this regime the deposition process is determined by the total ion dose and the average current density the sample was subjected to. Deposition yields up to 3.5 atoms per incident gallium ion are achieved. The layer quality is determined by Auger electron analysis, which shows fractions of Ga, C, Si and O in the W layer. Depth profiling by secondary ion mass spectroscopy showed the depth profiles of these constituents and confirmed the existence of a 50-100 nm thick transition zone between the tungsten layer and the substrate. Electrical resistivity of metal layers of 250 mu Omega cm and current densities up to 3.5 x106 A/cm2 are measured by means of van der Pauw test structures. In order to give a concise description of the experimental findings the data were interpreted utilizing an analytic model that mainly incorporates the precursor gas coverage, precursor gas transformation cross section and ion induced sputtering. The critical ion current density, where ion sputtering exceeds the deposition, was

  1. Ion beam assisted deposition of tribological coatings

    SciTech Connect

    Sartwell, B.D.; Dillich, S.A.; Sprague, J.A.; Kant, R.A.; Smidt, F.A.

    1989-01-01

    During this period films prepared under a variety of processing conditions were examined by TEM to explore the relation between hardness and grain boundary porosity. It was found that porosity decreased (and hardness increased) as the Ar[sup +] ion to T atom arrival rate ratio increased. A systematic error in measuring film thickness under varying chamber pressures due to scattering of T atoms near substrate surface by Ar atoms from the ion gun was discovered and the apparatus was modified and recalibrated. Hardness measurements on thick TiN films (1.5-2.5[mu]m) deposited on an M50 steel and Si substrates were performed at 3 loads and compared to a 0.5[mu]m thick film. Effect of increasing R value on hardness was evident at all loads but film thicknesses in excess of 1.5Am were required to produce representative hardness values at 25 gr indent loads. Scratch test adhesion measurements performed on these thick films showed no indication of brittle fracture and no indication of decohesion at loads up to 100N, well above the critical load of 30 Newtons expected for a sputtered TiN film. Additional experiments on effect of residual pressure on film properties were initiated.

  2. Laser Deposition of Polymer Micro- and Nanoassembly from Solution Using Focused Near-Infrared Laser Beam

    NASA Astrophysics Data System (ADS)

    Nabetani, Yu; Yoshikawa, Hiroyuki; Grimsdale, Andrew C.; Müllen, Klaus; Masuhara, Hiroshi

    2007-01-01

    We have demonstrated the laser deposition of polymer micro- and nanoassemblies from a solution onto a glass substrate. The size and shape of the deposited dot-like assembly can be controlled by the laser power (P) and the concentration of the solution (C). For an example, a nanoassembly of a π-conjugated polymer, whose width and height are 280 and 23 nm, respectively, is deposited at the conditions of C=1.0× 10-5 mg/ml and P=700 mW. This laser deposition can be attributed to the optical trapping and the surface deformation of the solution layer using a focused laser beam. It is also demonstrated that the molecular orientation in the assembly can be aligned in the direction of the laser polarization. The present laser deposition is applicable to the micropatterning of various polymers dissolved in an organic solvent.

  3. Molecular-beam gas-sampling system

    NASA Technical Reports Server (NTRS)

    Young, W. S.; Knuth, E. L.

    1972-01-01

    A molecular beam mass spectrometer system for rocket motor combustion chamber sampling is described. The history of the sampling system is reviewed. The problems associated with rocket motor combustion chamber sampling are reported. Several design equations are presented. The results of the experiments include the effects of cooling water flow rates, the optimum separation gap between the end plate and sampling nozzle, and preliminary data on compositions in a rocket motor combustion chamber.

  4. Physics with fast molecular-ion beams

    SciTech Connect

    Kanter, E.P.

    1980-01-01

    Fast (MeV) molecular-ion beams provide a unique source of energetic projectile nuclei which are correlated in space and time. The recognition of this property has prompted several recent investigations of various aspects of the interactions of these ions with matter. High-resolution measurements on the fragments resulting from these interactions have already yielded a wealth of new information on such diverse topics as plasma oscillations in solids and stereochemical structures of molecular ions as well as a variety of atomic collision phenomena. The general features of several such experiments will be discussed and recent results will be presented.

  5. Electron Beam Freeform Fabrication: A Rapid Metal Deposition Process

    NASA Technical Reports Server (NTRS)

    Taminger, Karen M. B.; Hafley, Robert A.

    2003-01-01

    Manufacturing of structural metal parts directly from computer aided design (CAD) data has been investigated by numerous researchers over the past decade. Researchers at NASA Langley REsearch Center are developing a new solid freeform fabrication process, electron beam freeform fabrication (EBF), as a rapid metal deposition process that works efficiently with a variety of weldable alloys. The EBF process introduces metal wire feedstock into a molten pool that is created and sustained using a focused electron beam in a vacuum environment. Thus far, this technique has been demonstrated on aluminum and titanium alloys of interest for aerospace structural applications nickel and ferrous based alloys are also planned. Deposits resulting from 2219 aluminum demonstrations have exhibited a range of grain morphologies depending upon the deposition parameters. These materials ave exhibited excellent tensile properties comparable to typical handbook data for wrought plate product after post-processing heat treatments. The EBF process is capable of bulk metal deposition at deposition rated in excess of 2500 cubic centimeters per hour (150 cubic inches per our) or finer detail at lower deposition rates, depending upon the desired application. This process offers the potential for rapidly adding structural details to simpler cast or forged structures rather than the conventional approach of machining large volumes of chips to produce a monolithic metallic structure. Selective addition of metal onto simpler blanks of material can have a significant effect on lead time reduction and lower material and machining costs.

  6. Photoelectron spectroscopy of supersonic molecular beams

    NASA Astrophysics Data System (ADS)

    Pollard, J. E.; Trevor, D. J.; Lee, Y. T.; Shirley, D. A.

    1981-12-01

    A high-resolution photoelectron spectrometer which uses molecular beam sampling is described. Photons from a rare-gas resonance lamp or UV laser are crossed with the beam from a differentially pumped supersonic nozzle source. The resulting photoelectrons are collected by an electrostatic analyzer of a unique design consisting of a 90° spherical sector preanalyzer, a system of lenses, and a 180° hemispherical deflector. A multichannel detection system based on dual microchannel plates with a resistive anode position encoder provides an increase in counting efficiency by a factor of 12 over the equivalent single channel detector. The apparatus has demonstrated an instrumental resolution of better than 10 meV FWHM, limited largely by the photon source linewidth. A quadrupole mass spectrometer is used to characterize the composition of the molecular beam. Extensive differential pumping is provided to protect the critical surfaces of the analyzer and mass spectrometer from contamination. Because of the near elimination of Doppler and rotational broadenings, the practical resolution is the highest yet obtained in molecular PES.

  7. Dual Ion Beam Deposition Of Diamond Films On Optical Elements

    NASA Astrophysics Data System (ADS)

    Deutchman, Arnold H.; Partyka, Robert J.; Lewis, J. C.

    1990-01-01

    Diamond film deposition processes are of great interest because of their potential use for the formation of both protective as well as anti-reflective coatings on the surfaces of optical elements. Conventional plasma-assisted chemical vapor deposition diamond coating processes are not ideal for use on optical components because of the high processing temperatures required, and difficulties faced in nucleating films on most optical substrate materials. A unique dual ion beam deposition technique has been developed which now makes possible deposition of diamond films on a wide variety of optical elements. The new DIOND process operates at temperatures below 150 aegrees Farenheit, and has been used to nucleate and grow both diamondlike carbon and diamond films on a wide variety of optical :taterials including borosilicate glass, quartz glass, plastic, ZnS, ZnSe, Si, and Ge.

  8. Electrostatic particle trap for ion beam sputter deposition

    DOEpatents

    Vernon, Stephen P.; Burkhart, Scott C.

    2002-01-01

    A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate. The electrostatic charged particle trap enables prevention of charged particles from being deposited on the substrate thereby enabling the deposition of extremely low defect density films, such as required for reflective masks of an extreme ultraviolet lithography (EUVL) system.

  9. Reactive ion beam deposition of aluminum nitride thin films

    NASA Astrophysics Data System (ADS)

    Bhat, S.; Ashok, S.; Fonash, S. J.; Tongson}, L.

    1985-07-01

    Aluminum nitride thin films have been prepared at room temperature by reactive ion beam sputtering for potential use as a passivant and diffusion/anneal cap in compound semiconductor technology. The electrical and optical pro-perties of these films have been studied along with the in-fluence of thermal annealing on the material characteristics. The quality of the films has also been found to improve in the presence of atomic hydrogen during the deposition.

  10. Applying CLIPS to control of molecular beam epitaxy processing

    NASA Technical Reports Server (NTRS)

    Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

    1990-01-01

    A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

  11. Rapid tooling by electron-beam vapor deposition

    SciTech Connect

    Meier, T. C., LLNL

    1998-02-25

    Electron-beam physical vapor deposition (EBPVD) of tooling metal, onto a shaped substrate to produce a replica of the substrate surface, offers the potential for significant cost savings over present methods of injection mold manufacturing. These savings are realized by the high deposition rate and the corresponding short manufacturing times provided by the EBPVD process. However, on route to realizing these gains, there are process technical issues which need to be resolved. Mold surfaces typically contain relatively high aspect ratio details that must be replicated to dimensional tolerances within +/- 2 mils. The deposited mold material must also provide high surface hardness and high fracture toughness. Good quality grain structure can be obtained in deposited Al 10-wt% Cu mold material when the substrate and corresponding deposit are at high process temperature. However, the resulting mold is subject to distortion during cooldown due to differential temperatures and shrinkage rates. Thermally controlled cooldown and the use of crushable substrate materials reduce these distortions, but not to the required levels of tolerance. Deposition of the Al-Cu at lower temperature produces columnar, poorly joined grains which result in a brittle and weakened mold material. When Al 10-wt% Cu metal vapor is deposited across high aspect ratio step features on the substrate surface, a grain growth defect can form in the step-shadowed regions of the deposited material, alongside the step feature. The step coverage defect consists of entrained voids which persist at intermediate deposition temperatures and produce a weakened mold. This final 1997 LDRD report investigates causes of this step coverage defect and offers methods for their control and elimination.

  12. Perspective: Oxide molecular-beam epitaxy rocks!

    SciTech Connect

    Schlom, Darrell G.

    2015-06-01

    Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  13. Molecular beam studies of reaction dynamics

    SciTech Connect

    Lee, Y.T.

    1987-03-01

    Purpose of this research project is two-fold: (1) to elucidate detailed dynamics of simple elementary reactions which are theoretically important and to unravel the mechanism of complex chemical reactions or photo chemical processes which play an important role in many macroscopic processes and (2) to determine the energetics of polyatomic free radicals using microscopic experimental methods. Most of the information is derived from measurement of the product fragment translational energy and angular distributions using unique molecular beam apparati designed for these purposes.

  14. A critical literature review of focused electron beam induced deposition

    SciTech Connect

    Dorp, W. F. van; Hagen, C. W.

    2008-10-15

    An extensive review is given of the results from literature on electron beam induced deposition. Electron beam induced deposition is a complex process, where many and often mutually dependent factors are involved. The process has been studied by many over many years in many different experimental setups, so it is not surprising that there is a great variety of experimental results. To come to a better understanding of the process, it is important to see to which extent the experimental results are consistent with each other and with the existing model. All results from literature were categorized by sorting the data according to the specific parameter that was varied (current density, acceleration voltage, scan patterns, etc.). Each of these parameters can have an effect on the final deposit properties, such as the physical dimensions, the composition, the morphology, or the conductivity. For each parameter-property combination, the available data are discussed and (as far as possible) interpreted. By combining models for electron scattering in a solid, two different growth regimes, and electron beam induced heating, the majority of the experimental results were explained qualitatively. This indicates that the physical processes are well understood, although quantitatively speaking the models can still be improved. The review makes clear that several major issues remain. One issue encountered when interpreting results from literature is the lack of data. Often, important parameters (such as the local precursor pressure) are not reported, which can complicate interpretation of the results. Another issue is the fact that the cross section for electron induced dissociation is unknown. In a number of cases, a correlation between the vertical growth rate and the secondary electron yield was found, which suggests that the secondary electrons dominate the dissociation rather than the primary electrons. Conclusive evidence for this hypothesis has not been found. Finally

  15. ALLIGATOR - An apparatus for ion beam assisted deposition with a broad-beam ion source

    NASA Astrophysics Data System (ADS)

    Wituschek, H.; Barth, M.; Ensinger, W.; Frech, G.; Rück, D. M.; Leible, K. D.; Wolf, G. K.

    1992-04-01

    Ion beam assisted deposition is a versatile technique for preparing thin films and coatings for various applications. Up to now a prototype setup for research purposes has been used in our laboratory. Processing of industrial standard workpieces requires a high current ion source with broad beam and high uniformity for homogeneous bombardment. In this contribution a new apparatus for large area samples will be described. It is named ALLIGATOR (German acronym of facility for ion assisted evaporation on transverse movable or rotary targets). In order to have a wide energy range available two ion sources are used. One delivers a beam energy up to 1.3 keV. The other is suitable for energies from 5 keV up to 40 keV. The ``high-energy'' ion source is a multicusp multiaperture source with 180-mA total current and a beam diameter of 280 mm at the target position.

  16. Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films

    NASA Astrophysics Data System (ADS)

    Cevro, Mirza; Carter, George

    1995-02-01

    Ion-beam sputter deposition (IBS) and dual-ion-beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. The optical properties, i.e., refractive index and extinction coefficient, of IBS films were determined in the 250- to 1100-nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n 2.06 at (lambda) equals 550 nm. Films deposited using DIBS, i.e., deposition assisted by low energy Ar and O2 ions (Ea equals 0 to 300 eV) and low current density (Ji equals 0 to 40 (mu) A/cm2), showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy, whereas composition of the film and contaminants were determined by Rutherford backscattering spectroscopy (RBS). Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target whereas assisted deposition slightly increased the Ar content. Stress in the IBS-deposited films was measured by the bending technique. IBS-deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals

  17. Ion beam and dual ion beam sputter deposition of tantalum oxide films

    NASA Astrophysics Data System (ADS)

    Cevro, Mirza; Carter, George

    1994-11-01

    Ion beam sputter deposition (IBS) and dual ion beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. Optical properties ie refractive index and extinction coefficient of IBS films were determined in the 250 - 1100 nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n equals 2.06 at (lambda) equals 550 nm. Films deposited using DIBS ie deposition assisted by low energy Ar and O2 ions (Ea equals 0 - 300 eV) and low current density (Ji equals 0 - 40 (mu) A/cm2) showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy while composition of the film and contaminants were determined by Rutherford scattering spectroscopy. Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target while assisted deposition slightly increased the Ar content. Stress in the IBS deposited films was measured by the bending technique. IBS deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All

  18. Highly bactericidal Ag nanoparticle films obtained by cluster beam deposition.

    PubMed

    Cavaliere, Emanuele; De Cesari, Sebastiano; Landini, Giulia; Riccobono, Eleonora; Pallecchi, Lucia; Rossolini, Gian Maria; Gavioli, Luca

    2015-08-01

    The recent emergence of bacterial pathogens resistant to most or all available antibiotics is among the major global public health problems. As indirect transmission through contaminated surfaces is a main route of dissemination for most of such pathogens, the implementation of effective antimicrobial surfaces has been advocated as a promising approach for their containment, especially in the hospital settings. However, traditional wet synthesis methods of nanoparticle-based antimicrobial materials leave a number of key points open for metal surfaces: such as adhesion to the surface and nanoparticle coalescence. Here we demonstrate an alternative route, i.e. supersonic cluster beam deposition, to obtain antimicrobial Ag nanoparticle films deposited directly on surfaces. The synthesized films are simple to produce with controlled density and thickness, are stable over time, and are shown to be highly bactericidal against major Gram positive and Gram negative bacterial pathogens, including extensively drug-resistant strains. The use of silver nanoparticle in health care is getting more widespread. The authors here describe the technique of cluster beam deposition for spraying silver on surfaces used in health care sectors. This may open a new avenue for future anti-bacterial coatings. Copyright © 2015 The Authors. Published by Elsevier Inc. All rights reserved.

  19. Surface chemistry on semiconductors studied by molecular-beam reactive scattering

    NASA Astrophysics Data System (ADS)

    Yu, Ming L.; DeLouise, Lisa A.

    1994-01-01

    This Report reviews the use of molecular-beam reactive scattering to study the surface reactions of gas molecules on semiconductors which have relevance to microelectronic technologies. Modern semiconductor fabrication techniques rely heavily on dry processes where gas-surface reactions are the basic premise. This article focuses on the use of supersonic molecular-beam-surface scattering to study the dynamics and kinetics of surface reactions connected with the growth and etching processes on semiconductor surfaces. The discussion on growth processes covers the oxidation of silicon and germanium, the tungsten-hexafluoride-based tungsten deposition, and the organometallic chemical vapor deposition of gallium arsenide. The discussion on etching processes covers the halogen-based etching of gallium arsenide and silicon. An overview of the experimental technique and the underlying principles in surface-reaction dynamics and kinetics is included for readers in the technology area. The potential use of the molecular beams for actual semiconductor materials processing is also discussed.

  20. Photoelectron spectroscopy of supersonic molecular beams

    SciTech Connect

    Pollard, J.E.

    1982-05-01

    A new technique for performing high resolution molecular photoelectron spectroscopy is described, beginning with its conceptual development, through the construction of a prototypal apparatus, to the initial applications on a particularly favorable molecular system. The distinguishing features of this technique are: (1) the introduction of the sample in the form of a collimated supersonic molecular beam; and (2) the use of an electrostatic deflection energy analyzer which is carefully optimized in terms of sensitivity and resolution. This combination makes it possible to obtain photoelectron spectra at a new level of detail for many small molecules. Three experiments are described which rely on the capability to perform rotationally-resolved photoelectron spectroscopy on the hydrogen molecule and its isotopes. The first is a measurement of the ionic vibrational and rotational spectroscopic constants and the vibrationally-selected photoionization cross sections. The second is a determination of the photoelectron asymmetry parameter, ..beta.., for selected rotational transitions. The third is an investigation of the rotational relaxation in a free jet expansion, using photoelectron spectroscopy as a probe of the rotational state population distributions. In the closing chapter an assessment is made of the successes and limitations of the technique, and an indication is given of areas for further improvement in future spectrometers.

  1. Deposition of silver on titania films by electron beam irradiation

    NASA Astrophysics Data System (ADS)

    Gu, Xue-Nan; Ye, Mao; Wu, Xiao-Ling; Wei, Lin; Hu, Yan; Hou, Xing-Gang; Liu, Xiao-Guang; Liu, An-Dong

    2006-06-01

    The deposition of silver on titania films prepared with sol-gel method was performed by electron beam irradiation of silver nitrate solutions. The high efficient Ag/TiO2 films were formed and exhibited enhanced photo-catalytic functions in degradation of methyl orange in aqueous solutions under UV illumination. Metallic Ag nano-clusters were confirmed by XPS, XRD and TEM. The relationship between the silver nitrate concentrations and the photo-catalytic efficiencies of the films was investigated. The optimum concentration of silver nitrate solution was found to be 5 × 10-4 M.

  2. Beam-induced energy deposition in muon storage rings

    SciTech Connect

    Nikolai V. Mokhov; Carol J. Johnstone; Brett Parker

    2001-06-22

    Beam-induced radiation effects have been simulated for 20 and 50 GeV muon storage rings designed for a Neutrino Factory. It is shown that by appropriately shielding the superconducting magnets, quench stability, acceptable dynamic heat loads, and low residual dose rates can be achieved. Alternatively, if a specially-designed skew focusing magnet without superconducting coils on the magnet's mid-plane is used, then the energy is deposited preferentially in the warm iron yoke or outer cryostat layers and internal shielding may not be required. In addition to the component irradiation analysis, shielding studies have been performed. Calculations of the external radiation were done for both designs but the internal energy deposition calculations for the 20 GeV Study-2 lattice are still in progress.

  3. BEAM INDUCED ENERGY DEPOSITION IN MUON STORAGE RINGS.

    SciTech Connect

    MOKHOV,N.V.; JOHNSTONE,C.J.; PARKER,B.L.

    2001-06-18

    Beam-induced radiation effects have been simulated for 20 and 50 GeV muon storage rings designed for a Neutrino Factory. It is shown that by appropriately shielding the superconducting magnets, quench stability, acceptable dynamic heat loads, and low residual dose rates can be achieved. Alternatively, if a specially-designed skew focusing magnet without superconducting coils on the magnet's mid-plane is used, then the energy is deposited preferentially in the warm iron yoke or outer cryostat layers and internal shielding may not be required. In addition to the component irradiation analysis, shielding studies have been performed. Calculations of the external radiation were done for both designs but the internal energy deposition calculations for the 20 GeV Study-2 lattice are still in progress.

  4. Molecular dynamics and quasidynamics simulations of the annealing of bulk and near-surface interstitials formed in molecular-beam epitaxial Si due to low-energy particle bombardment during deposition

    NASA Technical Reports Server (NTRS)

    Kitabatake, M.; Fons, P.; Greene, J. E.

    1991-01-01

    The relaxation, diffusion, and annihilation of split and hexagonal interstitials resulting from 10 eV Si irradiation of (2x1)-terminated Si(100) are investigated. Molecular dynamics and quasidynamics simulations, utilizing the Tersoff many-body potential are used in the investigation. The interstitials are created in layers two through six, and stable atomic configurations and total potential energies are derived as a function of site symmetry and layer depth. The interstitial Si atoms are allowed to diffuse, and the total potential energy changes are calculated. Lattice configurations along each path, as well as the starting configurations, are relaxed, and minimum energy diffusion paths are derived. The results show that the minimum energy paths are toward the surface and generally involved tetrahedral sites. The calculated interstitial migration activation energies are always less than 1.4 eV and are much lower in the near-surface region than in the bulk.

  5. Infrared Rugates by Molecular Beam Epitaxy

    NASA Technical Reports Server (NTRS)

    Rona, M.

    1993-01-01

    Rugates are optical structures that have a sinusoidal index of refraction (harmonic gradient-index field). As their discrete high/ low index filter counterparts, they can be used as narrow rejection band filters. However, since rugates do not have abrupt interfaces, they tend to have a smaller absorption, hence deliver a higher in band reflectivity. The absence of sharp interfaces makes rugates even more desirable for high-energy narrow band reflectors. In this application, the lack of a sharp interface at the maximum internal standing wave electric field results in higher breakdown strengths. Our method involves fabricating rugates, with molecular beam epitaxy, on GaAs wafers as an Al(x)Ga(1-x)As single-crystal film.

  6. Molecular sputter depth profiling using carbon cluster beams.

    PubMed

    Wucher, Andreas; Winograd, Nicholas

    2010-01-01

    Sputter depth profiling of organic films while maintaining the molecular integrity of the sample has long been deemed impossible because of the accumulation of ion bombardment-induced chemical damage. Only recently, it was found that this problem can be greatly reduced if cluster ion beams are used for sputter erosion. For organic samples, carbon cluster ions appear to be particularly well suited for such a task. Analysis of available data reveals that a projectile appears to be more effective as the number of carbon atoms in the cluster is increased, leaving fullerene ions as the most promising candidates to date. Using a commercially available, highly focused C (60) (q+) cluster ion beam, we demonstrate the versatility of the technique for depth profiling various organic films deposited on a silicon substrate and elucidate the dependence of the results on properties such as projectile ion impact energy and angle, and sample temperature. Moreover, examples are shown where the technique is applied to organic multilayer structures in order to investigate the depth resolution across film-film interfaces. These model experiments allow collection of valuable information on how cluster impact molecular depth profiling works and how to understand and optimize the depth resolution achieved using this technique.

  7. On the Growth of Complex Oxides by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Fong, Dillon

    Functional materials based on complex oxides in thin film form offer new and exciting strategies for meeting many of our outstanding energy challenges through systematic control of layer sequencing, strain, etc. However, the synthesis of such oxide films can be a major challenge even when utilizing reactive molecular-beam epitaxy (MBE), a powerful deposition technique that allows the construction of materials atomic plane by atomic plane. To understand the fundamental physics of oxide growth by reactive MBE, we present in situ surface x-ray diffraction results on the growth of SrTiO3 and SrO-SrTiO3 thin films on (001)-oriented SrTiO3 substrates. For homoepitaxy, we compare sequential deposition (alternating Sr and Ti monolayer doses) with that of co-deposition of Sr and Ti, both in a background of oxygen pressure, and observe drastically different growth pathways due to the presence of a TiO2 double layer. For heteroepitaxial growth of Ruddlesden-Popper SrO-SrTiO3 films, we find that layers rearrange dynamically, resulting in layer sequences distinct from the shutter sequence. In general, the starting surface structure and composition, in combination with local thermodynamic considerations, strongly influence our ability to atomically construct new complex oxides.

  8. Molecular contamination study by interaction of a molecular beam with a platinum surface

    NASA Technical Reports Server (NTRS)

    Nuss, H. E.

    1976-01-01

    The capability of molecular beam scattering from a solid surface is analyzed for identification of molecular contamination of the surface. The design and setup of the molecular beam source and the measuring setup for the application of a phase sensitive measuring technique for the determination of the scattered beam intensity are described. The scattering distributions of helium and nitrogen molecular beams interacting with a platinum surface were measured for different amounts of contamination from diffusion pump oil for surface temperatures ranging from 30 to 400 C. The results indicate the scattering of molecular beams from a platinum surface is a very sensitive method for detecting surface contamination.

  9. Note: High density pulsed molecular beam for cold ion chemistry

    SciTech Connect

    Kokish, M. G.; Rajagopal, V.; Marler, J. P.; Odom, B. C.

    2014-08-15

    A recent expansion of cold and ultracold molecule applications has led to renewed focus on molecular species preparation under ultrahigh vacuum conditions. Meanwhile, molecular beams have been used to study gas phase chemical reactions for decades. In this paper, we describe an apparatus that uses pulsed molecular beam technology to achieve high local gas densities, leading to faster reaction rates with cold trapped ions. We characterize the beam's spatial profile using the trapped ions themselves. This apparatus could be used for preparation of molecular species by reactions requiring excitation of trapped ion precursors to states with short lifetimes or for obtaining a high reaction rate with minimal increase of background chamber pressure.

  10. Anomalous scaling behavior and surface roughening in molecular thin-film deposition

    SciTech Connect

    Yim, S.; Jones, T. S.

    2006-04-15

    The thin film growth dynamics of a molecular semiconductor, free-base phthalocyanine (H{sub 2}Pc), deposited by organic molecular beam deposition, has been studied by atomic force microscopy (AFM) and height difference correlation function (HDCF) analysis. The measured dynamic scaling components ({alpha}{sub loc}=0.61{+-}0.12, {beta}=1.02{+-}0.08, and 1/z=0.72{+-}0.13) are consistent with rapid surface roughening and anomalous scaling behavior. A detailed analysis of AFM images and simple growth models suggest that this behavior arises from the pronounced upward growth of crystalline H{sub 2}Pc mounds during the initial stages of thin film growth.

  11. Ion-Beam-Assisted Deposition of MoS2 and Other Low-Friction Films

    DTIC Science & Technology

    2007-11-02

    Prepared For: Air Force Wright Aeronautical Lab(WRDC/MLBT), Wright-Patterson AFB,OH 45433 Descriptors, Keywords: ion beam film deposition MoS2 solid...NUMBERS Ion-Beam-Assisted Deposition of MoS2 and Other Low-Friction Films PE - 63224C, 61153N WU -2855, 3409 6. AUTHOR(S) Robert N. Bolster 7... MoS2 ) are effective as solid lubricants. Ion-beam-assisted deposition, which employs ion beam sputtering with an assist beam impinging on the growing

  12. A source of translationally cold molecular beams

    NASA Astrophysics Data System (ADS)

    Sarkozy, Laszlo C.

    Currently the fields studying or using molecules with low kinetic energies are experiencing an unprecedented growth. Astronomers and chemists are interested in chemical reactions taking place at temperatures below or around 20 K, spectroscopists could make very precise measurements on slow molecules and molecular physicists could chart the potential energy surfaces more accurately. And the list continues. All of these experiments need slow molecules, with kinetic energies from around 10 cm-1 down to 0. Several designs of cold sources have already been made. The most interesting ones are presented. This work describes the design and the testing of a cold source based on the collisional cooling technique: the molecules of interest are cooled well below their freezing point by a precooled buffer gas. This way condensation is avoided. The source is a copper cell cooled to 4.2 K by an external liquid helium bath. The cell is filled with cold buffer gas (helium). The molecules of choice (ammonia) are injected through a narrow tube in the middle of the cell. The cold molecules leave the cell through a 1 millimeter hole. Two versions of pulsing techniques have been employed: a shutter blade which covers the source hole and opens it only for short moments, and a chopper that modulates the beam further downstream. Both produced pulse lengths around 1 millisecond. The source is tested in an experiment in which the emerging molecules are focused and detected. Time of flight technique is used to measure the kinetic energies. Two detectors have been employed: a microwave cavity to analyze the state of the molecules in the beam, and a mass spectrometer to measure the number density of the particles. The molecules coming out of the source hole are formed into a beam by an electrostatic quadrupole state selector. The quantum mechanical aspects and the elements of electrodynamics involved in the focusing are described. A computer simulation program is presented, which helped

  13. Molecular beam studies of reaction dynamics

    SciTech Connect

    Lee, Y.T.

    1993-12-01

    The major thrust of this research project is to elucidate detailed dynamics of simple elementary reactions that are theoretically important and to unravel the mechanism of complex chemical reactions or photochemical processes that play important roles in many macroscopic processes. Molecular beams of reactants are used to study individual reactive encounters between molecules or to monitor photodissociation events in a collision-free environment. Most of the information is derived from measurement of the product fragment energy, angular, and state distributions. Recent activities are centered on the mechanisms of elementary chemical reactions involving oxygen atoms with unsaturated hydrocarbons, the dynamics of endothermic substitution reactions, the dependence of the chemical reactivity of electronically excited atoms on the alignment of excited orbitals, the primary photochemical processes of polyatomic molecules, intramolecular energy transfer of chemically activated and locally excited molecules, the energetics of free radicals that are important to combustion processes, the infrared-absorption spectra of carbonium ions and hydrated hydronium ions, and bond-selective photodissociation through electric excitation.

  14. Molecular beam studies of reaction dynamics

    SciTech Connect

    Lee, Y.T.

    1990-03-01

    The major thrust of this research project is to elucidate detailed dynamics of simple reactions that are theoretically important and to unravel the mechanism of complex chemical reactions or photochemical processes that play important roles in many macroscopic processes. Molecular beams of reactants are used to study individual reactive encounters between molecules or to monitor photodissociation events in a collision-free environment. Most of the information is derived from measurement of the product fragment energy, angular, and state distributions. Recent activities are centered on the mechanisms of elementary chemical reactions involving oxygen atoms with unsaturated hydrocarbons, the dynamics of endothermic substitution reactions, the dependence of the chemical reactivity of electronically excited atoms on the alignment of excited orbitals, the primary photochemical processes of polyatomic molecules, intramolecular energy transfer of chemically activated and locally excited molecules, the energetics of free radicals that are important to combustion processes, the infrared-absorption spectra of carbonium ions and hydrated hydronium ions, and bond-selective photodissociation through electric excitation. 34 refs.

  15. Molecular beam surface analysis. 1993 Summary report

    SciTech Connect

    Appelhans, A.D.; Ingram, J.C.; Groenewold, G.S.; Dahl, D.A.; Delmore, J.E.

    1993-09-01

    The Molecular Beam Surface Analysis (MBSA) program is developing both laboratory-based and potentially field-portable chemical analyses systems taking advantage of new surface analysis technology developed at the Idaho National Engineering Laboratory (INEL). The objective is to develop the means to rapidly detect and identify, with high specificity and high sensitivity, nonvolatile and low volatile organics found in Chemical Weapons (CW) and High Explosives (HE) feedstocks, agents, and decomposition products on surfaces of plants, rocks, paint chips, filters, smears of buildings, vehicles, equipment, etc.. Ideally, the method would involve no sample preparation and no waste generation, and would have the potential for being implemented as a field-portable instrument. In contrast to existing analytical methods that rely on sample volatility, MBSA is optimized for nonvolatile and low volatile compounds. This makes it amenable for rapidly screening field samples for CW agent decomposition products and feedstock chemicals and perhaps actual agents. In its final configuration (benchtop size) it could be operated in a non-laboratory environment (such as an office building) requiring no sample preparation chemistry or chemical supplies. It could also be included in a mobile laboratory used in on-site, ore remote site cooperative surveys, or in a standard laboratory, where it would provide fast screening of samples at minimal cost.

  16. Molecular beam studies of reaction dynamics

    SciTech Connect

    Lee, Yuan T.

    1991-03-01

    The major thrust of this research project is to elucidate detailed dynamics of simple elementary reactions that are theoretically important and to unravel the mechanism of complex chemical reactions or photochemical processes that play important roles in many macroscopic processes. Molecular beams of reactants are used to study individual reactive encounters between molecules or to monitor photodissociation events in a collision-free environment. Most of the information is derived from measurement of the product fragment energy, angular, and state distributions. Recent activities are centered on the mechanisms of elementary chemical reactions involving oxygen atoms with unsaturated hydrocarbons, the dynamics of endothermic substitution reactions, the dependence of the chemical reactivity of electronically excited atoms on the alignment of excited orbitals, the primary photochemical processes of polyatomic molecules, intramolecular energy transfer of chemically activated and locally excited molecules, the energetics of free radicals that are important to combustion processes, the infrared-absorption spectra of carbonium ions and hydrated hydronium ions, and bond-selective photodissociation through electric excitation.

  17. Fundamental Proximity Effects in Focused electron Beam Induced Deposition

    SciTech Connect

    Plank, Harald; Smith, Daryl; Haber, Thomas; Rack, Philip D; Hofer, Ferdinand

    2012-01-01

    Fundamental proximity effects for electron beam induced deposition processes on nonflat surfaces were studied experimentally and via simulation. Two specific effects were elucidated and exploited to considerably increase the volumetric growth rate of this nanoscale direct write method: (1) increasing the scanning electron pitch to the scale of the lateral electron straggle increased the volumetric growth rate by 250% by enhancing the effective forward scattered, backscattered, and secondary electron coefficients as well as by strong recollection effects of adjacent features; and (2) strategic patterning sequences are introduced to reduce precursor depletion effects which increase volumetric growth rates by more than 90%, demonstrating the strong influence of patterning parameters on the final performance of this powerful direct write technique.

  18. Energy deposition studies for the LBNE beam absorber

    SciTech Connect

    Rakhno, Igor L.; Mokhov, Nikolai V.; Tropin, Igor S.

    2015-01-29

    Results of detailed Monte Carlo energy deposition studies performed for the LBNE absorber core and the surrounding shielding with the MARS15 code are described. The model of the entire facility, that includes a pion-production target, focusing horns, target chase, decay channel, hadron absorber system – all with corresponding radiation shielding – was developed using the recently implemented ROOT-based geometry option in the MARS15 code. This option provides substantial flexibility and automation when developing complex geometry models. Both normal operation and accidental conditions were studied. Various design options were considered, in particular the following: (i) filling the decay pipe with air or helium; (ii) the absorber mask material and shape; (iii) the beam spoiler material and size. Results of detailed thermal calculations with the ANSYS code helped to select the most viable absorber design options.

  19. Residual stress control by ion beam assisted deposition

    SciTech Connect

    Was, G.S.; Jones, J.W.; Parfitt, L.; Kalnas, C.E.; Goldiner, M.

    1996-12-31

    The origin of residual stresses were studied in both crystalline metallic films and amorphous oxide films made by ion beam assisted deposition (IBAD). Monolithic films of Al{sub 2}O{sub 3} were deposited during bombardment by Ne, Ar or Kr over a narrow range of energies, E, and a wide range of ion-to-atom arrival rate ratios, R and were characterized in terms of composition, thickness, density, crystallinity, microstructure and residual stress. The stress was a strong function of ion beam parameters and gas content and compares to the behavior of other amorphous compounds such as MoSi{sub x} and WSi{sub 2.2}. With increasing normalized energy (eV/atom), residual stress in crystalline metallic films (Mo, W) increases in the tensile direction before reversing and becoming compressive at high normalized energy. The origin of the stress is most likely due to densification or interstitial generation. Residual stress in amorphous films (Al{sub 2}O{sub 3}, MoSi{sub x} and WSi{sub 2.2}) is initially tensile and monotonically decreases into the compressive region with increasing normalized energy. The amorphous films also incorporate substantially more gas than crystalline films and in the case of Al{sub 2}O{sub 3} are characterized by a high density of voids. Stress due to gas pressure in existing voids explains neither the functional dependence on gas content nor the magnitude of the observed stress. A more likely explanation for the behavior of stress is gas incorporation into the matrix, where the amount of incorporated gas is controlled by trapping.

  20. Atomic layer deposition ultrathin film origami using focused ion beams

    NASA Astrophysics Data System (ADS)

    Supekar, O. D.; Brown, J. J.; Eigenfeld, N. T.; Gertsch, J. C.; Bright, V. M.

    2016-12-01

    Focused ion beam (FIB) micromachining is a powerful tool for maskless lithography and in recent years FIB has been explored as a tool for strain engineering. Ion beam induced deformation can be utilized as a means for folding freestanding thin films into complex 3D structures. FIB of high energy gallium (Ga+) ions induces stress by generation of dislocations and ion implantation within material layers, which create creases or folds upon mechanical relaxation enabled by motion of the material layers. One limitation on such processing is the ability to fabricate flat freestanding thin film structures. This capability is limited by the residual stresses formed during processing and fabrication of the films, which can result in initial curvature and deformation of films upon release from a sacrificial fabrication layer. This paper demonstrates folding in freestanding ultrathin films (<40 nm thin) of heterogeneous composition (metal, insulator, semiconductor, etc) with large lateral dimension structures (aspect ratio >1:1000) by ion-induced stress relaxation. The ultrathin flat structures are fabricated using atomic layer deposition on sacrificial polyimide. We have demonstrated vertical folding with 30 keV Ga+ ions in structures with lateral dimensions varying from 10 to 50 μm.

  1. Atomic layer deposition ultrathin film origami using focused ion beams.

    PubMed

    Supekar, O D; Brown, J J; Eigenfeld, N T; Gertsch, J C; Bright, V M

    2016-12-09

    Focused ion beam (FIB) micromachining is a powerful tool for maskless lithography and in recent years FIB has been explored as a tool for strain engineering. Ion beam induced deformation can be utilized as a means for folding freestanding thin films into complex 3D structures. FIB of high energy gallium (Ga(+)) ions induces stress by generation of dislocations and ion implantation within material layers, which create creases or folds upon mechanical relaxation enabled by motion of the material layers. One limitation on such processing is the ability to fabricate flat freestanding thin film structures. This capability is limited by the residual stresses formed during processing and fabrication of the films, which can result in initial curvature and deformation of films upon release from a sacrificial fabrication layer. This paper demonstrates folding in freestanding ultrathin films (<40 nm thin) of heterogeneous composition (metal, insulator, semiconductor, etc) with large lateral dimension structures (aspect ratio >1:1000) by ion-induced stress relaxation. The ultrathin flat structures are fabricated using atomic layer deposition on sacrificial polyimide. We have demonstrated vertical folding with 30 keV Ga(+) ions in structures with lateral dimensions varying from 10 to 50 μm.

  2. Dual ion beam deposition of carbon films with diamondlike properties

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1984-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamondlike films generated by sputtering a graphite target.

  3. Dual ion beam deposition of carbon films with diamondlike properties

    NASA Astrophysics Data System (ADS)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamondlike films generated by sputtering a graphite target.

  4. Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim; Engel-Herbert, Roman

    2016-07-01

    The synthesis of a 50 unit cell thick n = 4 Srn+1TinO3n+1 (Sr5Ti4O13) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO2 layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO2 layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO3 perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.

  5. Sodium chloride on Si(100) grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Chung, Jen-Yang; Li, Hong-Dao; Chang, Wan-Heng; Leung, T. C.; Lin, Deng-Sung

    2011-02-01

    Sodium chloride (NaCl) films were grown on an Si(100)-(2 × 1) surface at near room temperature by molecular beam epitaxy (MBE). The atomic structure and growth mode of the prototypical ionic materials on the covalent bonded semiconductor surface is examined by synchrotron core-level x-ray photoemission spectrum (XPS), scanning tunneling microscopy (STM), and first-principles calculations. The Si 2p, Na 2p, and Cl 2p core-level spectra together indicate that adsorbed NaCl molecules at submonolayer coverage [i.e., below 0.4 monolayer (ML)] partially dissociate and form Si-Cl species, and that a significant portion of the dangling-bond characteristics of the clean surface remains after NaCl deposition of 1.8 MLs. The deposition of 0.65-ML NaCl forms a partially ordered adlayer, which includes NaCl networks, Si-Cl species, adsorbed Na species, and isolated dangling bonds. The STM results revealed that the first adlayer consists of bright protrusions which form small c(2 × 4) and (2 × 2) patches. Above 0.65 ML, the two-dimensional NaCl double-layer growth proceeds on top of the first adlayer.

  6. Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

    SciTech Connect

    Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim; Engel-Herbert, Roman

    2016-07-25

    The synthesis of a 50 unit cell thick n = 4 Sr{sub n+1}Ti{sub n}O{sub 3n+1} (Sr{sub 5}Ti{sub 4}O{sub 13}) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO{sub 2} layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO{sub 2} layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO{sub 3} perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.

  7. Gas-source molecular beam epitaxy of III V nitrides

    NASA Astrophysics Data System (ADS)

    Davis, R. F.; Paisley, M. J.; Sitar, Z.; Kester, D. J.; Ailey, K. S.; Linthicum, K.; Rowland, L. B.; Tanaka, S.; Kern, R. S.

    1997-06-01

    Amorphous, hexagonal and cubic phases of BN were grown via ion beam assisted deposition on Si(1 0 0) substrates. Gas-source molecular beam epitaxy of the III-V nitrides is reviewed. Sapphire(0 0 0 1) is the most commonly employed substrate with 6H-SiC(0 0 0 1), ZnO(1 1 1) and Si(1 1 1) also being used primarily for the growth of wurtzite GaN(0 0 0 1) in tandem with previously deposited GaN(0 0 0 1) or AlN(0 0 0 1) buffer layers. Silicon(0 0 1), GaAs(0 0 1), GaP(0 0 1) and 3C-SiC(0 0 1) have been employed for growth of cubic (zincblende) β-GaN(0 0 1). The precursor materials are evaporated metals and reactive N species produced either via ECR or RF plasma decomposition of N 2 or from ammonia. However, point defect damage from the plasma-derived species has resulted in a steady increase in the number of investigators now using ammonia. The growth temperatures for wurtzite GaN have increased from 650 ± 50°C to 800 ± 50°C to enhance the surface mobility of the reactants and, in turn, the efficiency of decomposition of ammonia and the microstructure and the growth rate of the films. Doping has been achieved primarily with Si (donor) and Mg (acceptor); the latter has been activated without post-growth annealing. Simple heterostructures, a p-n junction LED and a modulation-doped field-effect transistor have been achieved using GSMBE-grown material.

  8. Comparison of measured electron density rise and calculated neutral beam particle deposition in the TFTR tokamak

    SciTech Connect

    Park, H.; Budny, R.; McCune, D.; Taylor, G.; Zarnstorff, M.C. . Plasma Physics Lab.); Barnes, C.W. )

    1991-12-01

    The initial rate of rise of the central electron density during {approximately}100 keV deuterium neutral beam injection is found to agree well with calculations of the beam deposition rate. The best agreement is with beam deposition calculations using older tabulations of the atomic cross-sections; the effects of using new tabulations or including multi-step ionization processes appear to approximately cancel. The neutral-beam deposition profile is a strong function of both the magnitude and the shape of the target plasma density. Peaked heating profiles can be achieved at high target densities only from peaked target density profiles. 15 refs., 4 figs.

  9. Molecular Beam Mass Spectrometry (MBMS) (Revised) (Fact Sheet)

    SciTech Connect

    Not Available

    2011-07-01

    This fact sheet provides information about Molecular Beam Mass Spectrometry (MBMS) capabilities and applications at NREL's National Bioenergy Center. NREL has six MBMS systems that researchers and industry partners can use to understand thermochemical biomass conversion and biomass composition recalcitrance.

  10. III-nitride ultraviolet emitters produced by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Bhattacharyya, Anirban

    In this dissertation, the growth of III-Nitride based ultraviolet (UV) emitters by molecular beam epitaxy has been addressed. These devices can find applications in optical data storage, solid-state lighting, and in biological detection. A significant part of the research involved materials development, as there are several major scientific and technological hurdles that must be overcome in order to produce commercially viable devices. For emission in the wavelength region 330 nm to 350 nm, the devices were designed as electrically-injected light emitting diodes (LEDs). Each layer of this structure was individually optimized to improve the materials properties. To overcome the difficulties in p-type doping, a new growth regime has been explored which led to films with hole concentrations of up to 2 x 10 18/cm3. Multiple quantum wells (MQWs) were grown along polar and non-polar directions to understand the effects of the presence of built-in polarization fields. It was found that these detrimental effects are minimized for ultra thin wells. Use of an Indium flux as a surfactant was found to substantially improve the luminescence properties of bulk Aluminum Gallium Nitride (AlGaN) alloys and MQWs. UV-LEDs grown under these optimized conditions show an optical power output of 0.75 mW at 340 nm and 4.5 mW at 350nm. For emission in the wavelength region below 270 nm, due to the difficulty of doping AlGaN alloys with high Aluminum Nitride (AlN) mole fraction, edge or vertical emitting electron beam-pumped laser structures have been developed. Since it is difficult to cleave III-Nitrides deposited onto C-plane sapphire, edge emitting laser structures using a Graded-Index Separate Confinement Heterostructure (GRINSCH) based geometry have been deposited onto A-plane sapphire using a novel AlN buffer layer. An AlGaN bulk film or a set of AlN/AlGaN MQWs is used as the active region. For use in these devices, the growth of high Al content AlGaN was optimized to reduce the deep

  11. Fluorocarbon thin-film deposition on polymer surfaces from low-energy polyatomic ion beams

    NASA Astrophysics Data System (ADS)

    Wijesundara, Muthu Bandage Jayathilaka

    Low energy polyatomic ion deposition is attractive for selective surface modification of advanced materials. Surface modification by fluorocarbon (FC) thin film deposition is widely used for many technological applications. Thus, polymer surface modification by FC thin film deposition was carried out using mass-separated low energy FC ion beams. X-ray photoelectron spectroscopy, atomic force microscopy and air/water contact angles were employed to examine how the FC film chemistry, morphology, and long term stability depend on incident ion structure, kinetic energy, and fluence. Molecular dynamics simulations were performed to support experimental data. 25--100 eV CF3+ and C3F 5+ ion deposition on polystyrene (PS) surface was examined. CF3+ and C3F5+ each formed a distribution of different FC functional groups on PS in amounts dependent upon the incident ion energy, structure, and fluence. Both ions deposited mostly intact upon the surface at 25 eV. The total fluorine and fluorinated carbon content were increased with ion energy. The fluorination efficiency was higher for the larger ion. The simulations revealed that the fragmentation behavior depends on the incident ion structure and its energy. The simulations also confirmed that FC ions only penetrated a few angstroms into the surface. The compositional changes of 25--100 eV CF3+ and C3F5+ ion-modified PS surfaces were examined after being exposed to atmosphere for four and eight weeks. The FC films oxidized in atmospheric conditions. Oxygen incorporation into the ion-modified surfaces increased with ion energy due to higher surface bond breakage and active site formation at high collision energy. Overall, the aging process of these ion-deposited films appeared similar to that of plasma-deposited films. Mass-selected 50 eV C3F5+ ion deposition was employed to create chemical gradient thin films on polymethylmethacrylate (PMMA) by variation of the ion fluence across the substrate surface. The surface chemistry

  12. Efficient Electron Beam Deposition for Repetitively Pulsed Krypton Fluoride Lasers

    NASA Astrophysics Data System (ADS)

    Hegeler, F.; Myers, M. C.; Friedman, M.; Sethian, J. D.; Swanekamp, S. B.; Rose, D. V.; Welch, D. R.

    2002-12-01

    We have demonstrated that we can significantly increase the electron beam transmission efficiency through a pressure foil structure (hibachi) by segmenting the beam into strips to miss the hibachi support ribs. In order to increase the electron beam transmission, the cathode strips are adjusted to compensate for beam rotation and pinching. The beam propagation through the hibachi has been both measured and simulated with 1-D and 3-D codes.

  13. Orientational anisotropy in simulated vapor-deposited molecular glasses

    SciTech Connect

    Lyubimov, Ivan; Antony, Lucas; Walters, Diane M.; Ediger, M. D.; Rodney, David; Pablo, Juan J. de

    2015-09-07

    Enhanced kinetic stability of vapor-deposited glasses has been established for a variety of glass organic formers. Several recent reports indicate that vapor-deposited glasses can be orientationally anisotropic. In this work, we present results of extensive molecular simulations that mimic a number of features of the experimental vapor deposition process. The simulations are performed on a generic coarse-grained model and an all-atom representation of N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD), a small organic molecule whose vapor-deposited glasses exhibit considerable orientational anisotropy. The coarse-grained model adopted here is found to reproduce several key aspects reported in experiments. In particular, the molecular orientation of vapor-deposited glasses is observed to depend on substrate temperature during deposition. For a fixed deposition rate, the molecular orientation in the glasses changes from isotropic, at the glass transition temperature, T{sub g}, to slightly normal to the substrate at temperatures just below T{sub g}. Well below T{sub g}, molecular orientation becomes predominantly parallel to the substrate. The all-atom model is used to confirm some of the equilibrium structural features of TPD interfaces that arise above the glass transition temperature. We discuss a mechanism based on distinct orientations observed at equilibrium near the surface of the film, which get trapped within the film during the non-equilibrium process of vapor deposition.

  14. Electromigration in focused ion beam deposited tungsten single nanowires

    NASA Astrophysics Data System (ADS)

    Mandal, Pabitra; Das, Bipul; Raychaudhuri, A. K.

    As the focused ion beam induced deposited (FIBID) nanowires (NWs) of W, Pt are being used in nanoelectronic technology to connect individual nanodevices, repairing damaged interconnects in integrated circuit (IC), electromigration study in FIBID-NWs has become essential. Briefly, when a thin conductor, like metallic Al, Cu interconnects in an IC chip carry quite high current density ~1012 A/m2, ions or atoms start migrating. Such migration causes void and hillock formation leading to interconnect discontinuity, short circuit and ultimately IC failure. Our electromigration study in single FIBID-NWs of W reveals that failure in NWs of width and thickness ~100 nm occurs typically at 1011 A/m2. Most notably, void and hillock always form in opposite polarity compared to typical metallic NWs. Such distinctly new outcome is explained via electromigration driven by direct force (ionic charge*electric field) opposed to wind force driven migration observed in metallic NWs. As FIBID-NWs are composite in nature, different species (e.g., Ga, W and C) migrate with different degree and direction depending on their oxidation state, leading to redistribution of species across NW length and formation of a Ga rich hillock. S. N. Bose National Centre for Basic Sciences, Block-JD, Sector-III, Salt Lake, Kolkata-98, India.

  15. Surface chemical reactions induced by well-controlled molecular beams: translational energy and molecular orientation control.

    PubMed

    Okada, Michio

    2010-07-07

    I review our recent studies of chemical reactions on single-crystalline Cu and Si surfaces induced by hyperthermal oxygen molecular beams and by oriented molecular beams, respectively. Studies of oxide formation on Cu induced by hyperthermal molecular beams suggest that the translational energy of the incident molecules plays a significant role. The use of hyperthermal molecular beams enables us to open up new chemical reaction paths, and to develop new methods for the fabrication of thin films. Oriented molecular beams also demonstrate the possibility for controlling surface chemical reactions by varying the orientation of the incident molecules. The steric effects found on Si surfaces hint at new ways of achieving material fabrication on Si surfaces. Controlling the initial conditions of incoming molecules is a powerful tool for creating new materials on surfaces with well-controlled chemical reactions. © 2010 IOP Publishing Ltd

  16. AlN grown by metalorganic molecular beam epitaxy

    SciTech Connect

    Mackenzie, J.D.; Abernathy, C.R.; Pearton, S.J.; Wilson, R.G.

    1995-08-01

    Thin film AlN has been grown on Al{sub 2}O{sub 3} and GaAs substrates by metalorganic molecular beam epitaxy (MOMBE) using amine bonded alane precursors, tertiarybutylamine, and nitrogen from a compact electron cyclotron resonance (ECR) plasma source operating at 2.45 GHz. Typical growth pressures were in the 0.5--1 {times} 10{sup {minus}4} Torr range. The growth rates, impurity backgrounds and surface morphologies were examined for both nitrogen sources and both the solid and liquid alanes. In general, growth efficiencies were good for both alane precursors, allowing for deposition of the low temperature, {approximately} 400 C, AlN buffers needed for subsequent growth of GaN and InGaAlN alloys. Low growth temperatures could not be obtained using tertiarybutylamine, presumably due to poor decomposition efficiency of the source at low temperatures. The structural quality of material grown at high temperatures from the ECR plasma was measured by atomic force microscopy (AFM) and high resolution x-ray diffraction (HRXRD), indicating a surface roughness of {approximately} 8 {angstrom} and an x-ray full width half maximum (FWHM) of 430 arcsec.

  17. A free jet (supersonic), molecular beam source with automatized, 50 nm precision nozzle-skimmer positioning.

    PubMed

    Eder, S D; Samelin, B; Bracco, G; Ansperger, K; Holst, B

    2013-09-01

    Low energy (thermal) free jet (supersonic) molecular beams are used in a range of applications from surface science and surface deposition to quantum coherence and gas kinetics experiments. A free jet molecular beam is created by a gas expansion from a high pressure reservoir through a small aperture (nozzle). The nozzle typically has a diameter of 2-20 μm. The central part of the beam is selected using a skimmer, typically up to 500 μm in diameter. Recent years have seen the introduction of highly spatially confined beam sources based on micrometer skimmers and micrometer or even sub-micrometer nozzles. Such sources have been applied, for example, in the investigation of superfluidity and in neutral helium microscopy. However, up till now no source design allowing the precise positioning of the micro-skimmer relative to the nozzle has been available. This is an important issue because the relative position of skimmer and nozzle can influence the beam properties considerably. Here we present the design and implementation of a new molecular beam source, which allows an automatized, 50 nm precision positioning of the skimmer relative to the nozzle. The source is liquid nitrogen cooled and the temperature can be controlled between 110 K and 350 K with a temperature fluctuation of less than ±0.1 K over several hours. Beam intensity measurements using a 5 μm nozzle and a skimmer 5 μm in diameter are presented for stagnation pressures po in the range 3-180 bars. A 2D beam profile scan, using a 9.5 μm skimmer and a 5 μm nozzle is presented as a further documentation of the versatility of the new design and as an illustration of the influence of the relative skimmer-nozzle position on the beam properties.

  18. Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)

    NASA Astrophysics Data System (ADS)

    Debnath, R. K.; Meijers, R.; Richter, T.; Stoica, T.; Calarco, R.; Lüth, H.

    2007-03-01

    GaN nanowires have been grown without external catalyst on Si(111) substrates by plasma-assisted molecular beam epitaxy. Nanowire aspect ratios (length/diameter) of about 250 have been achieved. During the initial stage of the growth, there is a nucleation process in which the number of wires increases and the most probable nucleation diameter of about 10nm has been observed, which slowly increases with deposition time. For deposition time longer than the nucleation stage, the nanowire length as a function of diameter monotonically decreases. This phenomenon can be explained by adatom diffusion on the nanowire lateral surface towards the tip.

  19. Measuring Incorporation Of Arsenic In Molecular-Beam Expitaxy

    NASA Technical Reports Server (NTRS)

    Lewis, Blair F.; Fernandez, Rouel F.; Madhukar, Anupam; Grunthaner, Frank J.

    1988-01-01

    Changes in surface layers cause oscillations in RHEED measurements. Specular RHEED Beam intensity measured before, during, and after deposition of seven to eight monomolecular layers of gallium during 1.5 seconds. Arsenic pressure was 1.7x10 to the negative seventh power torr (2.3x10 to the negative fifth power Pa) throughout measurements.

  20. Measuring Incorporation Of Arsenic In Molecular-Beam Expitaxy

    NASA Technical Reports Server (NTRS)

    Lewis, Blair F.; Fernandez, Rouel F.; Madhukar, Anupam; Grunthaner, Frank J.

    1988-01-01

    Changes in surface layers cause oscillations in RHEED measurements. Specular RHEED Beam intensity measured before, during, and after deposition of seven to eight monomolecular layers of gallium during 1.5 seconds. Arsenic pressure was 1.7x10 to the negative seventh power torr (2.3x10 to the negative fifth power Pa) throughout measurements.

  1. Supersonic molecular beam experiments on surface chemical reactions.

    PubMed

    Okada, Michio

    2014-10-01

    The interaction of a molecule and a surface is important in various fields, and in particular in complex systems like biomaterials and their related chemistry. However, the detailed understanding of the elementary steps in the surface chemistry, for example, stereodynamics, is still insufficient even for simple model systems. In this Personal Account, I review our recent studies of chemical reactions on single-crystalline Cu and Si surfaces induced by hyperthermal oxygen molecular beams and by oriented molecular beams, respectively. Studies of oxide formation on Cu induced by hyperthermal molecular beams demonstrate a significant role of the translational energy of the incident molecules. The use of hyperthermal molecular beams enables us to open up new chemical reaction paths specific for the hyperthermal energy region, and to develop new methods for the fabrication of thin films. On the other hand, oriented molecular beams also demonstrate the possibility of understanding surface chemical reactions in detail by varying the orientation of the incident molecules. The steric effects found on Si surfaces hint at new ways of material fabrication on Si surfaces. Controlling the initial conditions of incoming molecules is a powerful tool for finely monitoring the elementary step of the surface chemical reactions and creating new materials on surfaces.

  2. Efficient Energy Deposition for an Electron Beam Pumped KrF Laser

    NASA Astrophysics Data System (ADS)

    Hegeler, F.; Myers, M. C.; Friedman, M.; Sethian, J. D.; Swanekamp, S. B.; Rose, D. V.; Welch, D. R.

    2002-11-01

    Electra is a repetitively pulsed, electron beam pumped krypton fluoride (KrF) laser that will develop the technologies that can meet the Inertial Fusion Energy (IFE) requirements for durability, efficiency, and cost. The Electra laser is pumped with two opposing electron beams each with parameters of 500 kV, 90 kA, with a 100 ns flat-top pulse duration, and a cathode area of 27 x 97 cm^2. The e-beam propagates through a hibachi structure, which supports a thin foil that isolates the vacuum diode from the high-pressure (>1 atm) laser gas. It has been demonstrated that segmenting the beam into strips to miss the hibachi support ribs significantly increases the electron beam deposition efficiency. The energy deposition efficiency is defined as the ratio of energy deposited in the laser gas over the vacuum diode e-beam energy. Energy deposition efficiencies of 75have been achieved with a 500 keV e-beam. In addition, 1-D and 3-D codes have simulated the e-beam propagation through the hibachi, and 1-D codes predict a maximum energy deposition efficiency of 81

  3. Reactive Collisions in Crossed Molecular Beams

    DOE R&D Accomplishments Database

    Herschbach, D. R.

    1962-02-01

    The distribution of velocity vectors of reaction products is discussed with emphasis on the restrictions imposed by the conservation laws. The recoil velocity that carries the products away from the center of mass shows how the energy of reaction is divided between internal excitation and translation. Similarly, the angular distributions, as viewed from the center of mass, reflect the partitioning of the total angular momentum between angular momenta of individual molecules and orbital angular momentum associated with their relative motion. Crossed-beam studies of several reactions of the type M + RI yields R + MI are described, where M = K, Rb, Cs, and R = CH{sub 3}, C{sub 3}H{sub 5}, etc. The results show that most of the energy of reaction goes into internal excitation of the products and that the angular distribution is quite anisotropic, with most of the MI recoiling backward (and R forward) with respect to the incoming K beam. (auth)

  4. (abstract) Optical Scattering and Surface Microroughness of Ion Beam Deposited Au and Pt Thin Films

    NASA Technical Reports Server (NTRS)

    Al-Jumaily, Ghanim A.; Raouf, Nasrat A.; Edlou, Samad M.; Simons, John C.

    1994-01-01

    Thin films of gold and platinum have been deposited onto superpolished fused silica substrates using thermal evaporation, ion assisted deposition (IAD), and ion assisted sputtering. The influence of ion beam flux, thin film material, and deposition rate on the films microroughness have been investigated. Short range surface microroughness of the films has been examined using scanning tunneling microscopy (STM) and atomic force microscopy (AFM). Long range surface microroughness has been characterized using an angle resolved optical scatterometer. Results indicate that ion beam deposited coatings have improved microstructure over thermally evaporated films.

  5. Thin film growth rate effects for primary ion beam deposited diamondlike carbon films

    NASA Technical Reports Server (NTRS)

    Nir, D.; Mirtich, M.

    1986-01-01

    Diamondlike carbon (DLC) films were grown by primary ion beam deposition and the growth rates were measured for various beam energies, types of hydrocarbon gases and their ratio to Ar, and substrate materials. The growth rate had a linear dependence upon hydrocarbon content in the discharge chamber, and only small dependence on other parameters. For given deposition conditions a threshold in the atomic ratio of carbon to argon gas was identified below which films did not grow on fused silica substrate, but grew on Si substrate and on existing DLC films. Ion source deposition parameters and substrate material were found to affect the deposition threshold and film growth rates.

  6. Laser damage resistance of hafnia thin films deposited by electron beam deposition, reactive low voltage ion plating, and dual ion beam sputtering

    SciTech Connect

    Gallais, Laurent; Capoulade, Jeremie; Natoli, Jean-Yves; Commandre, Mireille; Cathelinaud, Michel; Koc, Cian; Lequime, Michel

    2008-05-01

    A comparative study is made of the laser damage resistance of hafnia coatings deposited on fused silica substrates with different technologies: electron beam deposition (from Hf or HfO2 starting material), reactive low voltage ion plating, and dual ion beam sputtering.The laser damage thresholds of these coatings are determined at 1064 and 355 nm using a nanosecond pulsed YAG laser and a one-on-one test procedure. The results are associated with a complete characterization of the samples: refractive index n measured by spectrophotometry, extinction coefficient k measured by photothermal deflection, and roughness measured by atomic force microscopy.

  7. Molecular-beam Studies of Primary Photochemical Processes

    DOE R&D Accomplishments Database

    Lee, Y. T.

    1982-12-01

    Application of the method of molecular-beam photofragmentation translational spectroscopy to the investigation of primary photochemical processes of polyatomic molecules is described. Examples will be given to illustrate how information concerning the energetics, dynamics, and mechanism of dissociation processes can be obtained from the precise measurements of angular and velocity distributions of products in an experiment in which a well-defined beam of molecules is crossed with a laser.

  8. Oxygen-assisted purification of platinum structures deposited by ion and electron beam induced processes

    NASA Astrophysics Data System (ADS)

    Perez-Roldan, M. J.; Mulders, J. J. L.; Trompenaars, P. H. F.

    2017-05-01

    Purification in the presence of O2 flux is investigated in platinum structures grown by ion and electron beam induced deposition processes using a standard precursor, MeCpPtMe3. Two different room temperature purification processes are evaluated. In the first process, the purification is obtained by simultaneously supplying oxygen and precursor gas during the deposition. In the second process, an in situ post-treatment is performed on deposited structures by electron irradiation in the presence of oxygen. The first process applied to electron beam deposition requires a high flux of oxygen to improve the purification efficiency, while application to ion beam deposition requires a lower oxygen flux to enhance purification while avoiding an additional increase of the milling process. Both purification processes result in high purity Pt depositions and a reduction of deposition yields. For the ion beam, the electrical resistivity only drops for the first purification process: deposition supplying simultaneously oxygen and gas precursor. The second process of electron post irradiation does result in compositional changes, including reduced amounts of carbon but does not result in improvements in resistivity. For the electron beam, the resistivity shows a significant reduction applying both purification processes in sequence: in this way a resistivity of 22.5 µΩ cm has been obtained which is only twice the bulk value for Pt.

  9. Ion beam sculpting molecular scale devices

    NASA Astrophysics Data System (ADS)

    Stein, Derek Martin

    We envision solid-state nanopores at the heart of a device capable of detecting, manipulating, and ultimately sequencing individual DNA molecules. To reliably fabricate holes whose diameter is commensurate with that of the DNA molecule (˜2nm), low energy ion beams are employed to tailor the size of holes in solid-state membranes by a new technique we call "ion beam sculpting". The transmission rate of ions through the hole is monitored to provide a direct, real-time measure of the hole area that is used as a feedback signal to trigger the termination of the ion irradiation process when the desired hole size is obtained. The sensitivity of the transmitted ion count rate to atomic-scale material rearrangements at the perimeter of a hole led to a surprising discovery: Low-energy ion beams stimulate the lateral transport of matter when incident on a surface, resulting in the growth of a thin film from the boundary of a hole that closes the hole. The net flow of matter is determined by a competition between sputter erosion, which opens the hole, and a hole closing process that dominates at high temperature and low flux. The timescale for lateral matter transport under ion irradiation is surprisingly long---on the order of a second. Two physical models are proposed to account for the surprising ion-stimulated transport of matter. One model is based on the viscous flow of a stressed surface layer, while the other is based on the diffusion of mobile, ion-stimulated species at the surface of the material into the hole. The predictions of the latter are compared to ion beam sculpting experiments. We exploit ion beam sculpting to fabricate solid-state nanopores used as electronic detectors of individual DNA molecules. In ionic solution, negatively charged DNA molecules are drawn to the nanopore by an applied electrochemical potential, resulting in a detectable characteristic ionic current blockade when a molecules occludes the nanopore. The applicability of the ion sculpting

  10. Production of high density molecular beams with wide velocity scanning

    SciTech Connect

    Sheffield, L. S.; Woo, S. O.; Rathnayaka, K. D. D.; Lyuksyutov, I. F. Herschbach, D. R.

    2016-06-15

    We describe modifications of a pulsed rotating supersonic beam source that improve performance, particularly increasing the beam density and sharpening the pulse profiles. As well as providing the familiar virtues of a supersonic molecular beam (high intensity, narrowed velocity distribution, and drastic cooling of rotation and vibration), the rotating source enables scanning the translational velocity over a wide range. Thereby, beams of any atom or molecule available as a gas can be slowed or speeded. Using Xe beams in the slowing mode, we have obtained lab speeds down to about 40 ± 5 m/s with density near 10{sup 11} cm{sup −3} and in the speeding mode lab speeds up to about 660 m/s and density near 10{sup 14} cm{sup −3}. We discuss some congenial applications. Providing low lab speeds can markedly enhance experiments using electric or magnetic fields to deflect, steer, or further slow polar or paramagnetic molecules. The capability to scan molecular speeds facilitates merging velocities with a codirectional partner beam, enabling study of collisions at very low relative kinetic energies, without requiring either beam to be slow.

  11. Space processing applications of ion beam technology. [surface finishing, welding, milling and film deposition

    NASA Technical Reports Server (NTRS)

    Grodzka, P. G.

    1977-01-01

    Ion thruster engines for spacecraft propulsion can serve as ion beam sources for potential space processing applications. The advantages of space vacuum environments and the possible gravity effects on thruster ion beam materials operations such as thin film growth, ion milling, and surface texturing were investigated. The direct gravity effect on sputter deposition and vapor deposition processes are discussed as well as techniques for cold and warm welding.

  12. Fundamental Study of Antimonide Nanostructures by Molecular Beam Epitaxy

    DTIC Science & Technology

    2016-02-04

    to conduct experimental work in molecular beam epitaxial growth of GaSb/GaAs and InSb/GaAs quantum dots (QDs) are conducted and compared with...September 2014 to July 2015 being conducted at Chulalongkorn University in Thailand. Following the research work on InAs quantum dots (QDs) and quantum ... dot molecules (QDMs) grown by molecular beam epitaxy (MBE), the research target is extended to GaSb QDs and InSb QDs which are type II quantum

  13. A low Earth orbit molecular beam space simulation facility

    NASA Technical Reports Server (NTRS)

    Cross, J. B.

    1984-01-01

    A brief synopsis of the low Earth orbit (LEO) satellite environment is presented including neutral and ionic species. Two ground based atomic and molecular beam instruments are described which are capable of simulating the interaction of spacecraft surfaces with the LEO environment and detecting the results of these interactions. The first detects mass spectrometrically low level fluxes of reactively and nonreactively surface scattered species as a function of scattering angle and velocity while the second ultrahigh velocity (UHV) molecular beam, laser induced fluorescence apparatus is capable of measuring chemiluminescence produced by either gas phase or gas-surface interactions. A number of proposed experiments are described.

  14. A low Earth orbit molecular beam space simulation facility

    NASA Technical Reports Server (NTRS)

    Cross, J. B.

    1984-01-01

    A brief synopsis of the low Earth orbit (LEO) satellite environment is presented including neutral and ionic species. Two ground based atomic and molecular beam instruments are described which are capable of simulating the interaction of spacecraft surfaces with the LEO environment and detecting the results of these interactions. The first detects mass spectrometrically low level fluxes of reactively and nonreactively surface scattered species as a function of scattering angle and velocity while the second ultrahigh velocity (UHV) molecular beam, laser induced fluorescence apparatus is capable of measuring chemiluminescence produced by either gas phase or gas-surface interactions. A number of proposed experiments are described.

  15. Ion Beam Deposition of Thin Films: Growth Processes and Nanostructure Formation

    SciTech Connect

    Hofsaess, Hans C.

    2004-12-01

    Ion beam deposition is a process far from thermodynamic equilibrium and is in particular suited to grow metastable thin films with diamond-like properties, such as tetrahedral amorphous carbon (ta-C) and cubic boron nitride (c-BN). In this contribution the atomistic description of the deposition and growth processes are reviewed and compared to experimental results, obtained from mass selected ion beam deposition. The focus will be set to the nucleation and growth processes of boron nitride as a model system for ion based thin film formation. Furthermore, recent examples for nanostructure formation in ion deposited compound thin films will be presented. Ion beam deposited metal-carbon nano-composite thin films exhibit a variety of different morphologies such as rather homogeneous nanocluster distributions embedded in an a-C matrix, but also the self-organized formation of nanoscale multilayer structures.

  16. Atomic and molecular layer deposition for surface modification

    SciTech Connect

    Vähä-Nissi, Mika; Sievänen, Jenni; Salo, Erkki; Heikkilä, Pirjo; Kenttä, Eija; Johansson, Leena-Sisko; Koskinen, Jorma T.; Harlin, Ali

    2014-06-01

    Atomic and molecular layer deposition (ALD and MLD, respectively) techniques are based on repeated cycles of gas–solid surface reactions. A partial monolayer of atoms or molecules is deposited to the surface during a single deposition cycle, enabling tailored film composition in principle down to molecular resolution on ideal surfaces. Typically ALD/MLD has been used for applications where uniform and pinhole free thin film is a necessity even on 3D surfaces. However, thin – even non-uniform – atomic and molecular deposited layers can also be used to tailor the surface characteristics of different non-ideal substrates. For example, print quality of inkjet printing on polymer films and penetration of water into porous nonwovens can be adjusted with low-temperature deposited metal oxide. In addition, adhesion of extrusion coated biopolymer to inorganic oxides can be improved with a hybrid layer based on lactic acid. - Graphical abstract: Print quality of a polylactide film surface modified with atomic layer deposition prior to inkjet printing (360 dpi) with an aqueous ink. Number of printed dots illustrated as a function of 0, 5, 15 and 25 deposition cycles of trimethylaluminum and water. - Highlights: • ALD/MLD can be used to adjust surface characteristics of films and fiber materials. • Hydrophobicity after few deposition cycles of Al{sub 2}O{sub 3} due to e.g. complex formation. • Same effect on cellulosic fabrics observed with low temperature deposited TiO{sub 2}. • Different film growth and oxidation potential with different precursors. • Hybrid layer on inorganic layer can be used to improve adhesion of polymer melt.

  17. Inert Gas Enhanced Laser-Assisted Purification of Platinum Electron-Beam-Induced Deposits.

    PubMed

    Stanford, Michael G; Lewis, Brett B; Noh, Joo Hyon; Fowlkes, Jason D; Rack, Philip D

    2015-09-09

    Electron-beam-induced deposition patterns, with composition of PtC5, were purified using a pulsed laser-induced purification reaction to erode the amorphous carbon matrix and form pure platinum deposits. Enhanced mobility of residual H2O molecules via a localized injection of inert Ar-H2 (4%) is attributed to be the reactive gas species for purification of the deposits. Surface purification of deposits was realized at laser exposure times as low as 0.1 s. The ex situ purification reaction in the deposit interior was shown to be rate-limited by reactive gas diffusion into the deposit, and deposit contraction associated with the purification process caused some loss of shape retention. To circumvent the intrinsic flaws of the ex situ anneal process, in situ deposition and purification techniques were explored that resemble a direct write atomic layer deposition (ALD) process. First, we explored a laser-assisted electron-beam-induced deposition (LAEBID) process augmented with reactive gas that resulted in a 75% carbon reduction compared to standard EBID. A sequential deposition plus purification process was also developed and resulted in deposition of pure platinum deposits with high fidelity and shape retention.

  18. Inert gas enhanced laser-assisted purification of platinum electron-beam-induced deposits

    SciTech Connect

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; Fowlkes, Jason Davidson; Rack, Philip D.

    2015-06-30

    Electron-beam-induced deposition patterns, with composition of PtC5, were purified using a pulsed laser-induced purification reaction to erode the amorphous carbon matrix and form pure platinum deposits. Enhanced mobility of residual H2O molecules via a localized injection of inert Ar–H2 (4%) is attributed to be the reactive gas species for purification of the deposits. Surface purification of deposits was realized at laser exposure times as low as 0.1 s. The ex situ purification reaction in the deposit interior was shown to be rate-limited by reactive gas diffusion into the deposit, and deposit contraction associated with the purification process caused some loss of shape retention. To circumvent the intrinsic flaws of the ex situ anneal process, in situ deposition and purification techniques were explored that resemble a direct write atomic layer deposition (ALD) process. First, we explored a laser-assisted electron-beam-induced deposition (LAEBID) process augmented with reactive gas that resulted in a 75% carbon reduction compared to standard EBID. Lastly, a sequential deposition plus purification process was also developed and resulted in deposition of pure platinum deposits with high fidelity and shape retention.

  19. Inert gas enhanced laser-assisted purification of platinum electron-beam-induced deposits

    DOE PAGES

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; ...

    2015-06-30

    Electron-beam-induced deposition patterns, with composition of PtC5, were purified using a pulsed laser-induced purification reaction to erode the amorphous carbon matrix and form pure platinum deposits. Enhanced mobility of residual H2O molecules via a localized injection of inert Ar–H2 (4%) is attributed to be the reactive gas species for purification of the deposits. Surface purification of deposits was realized at laser exposure times as low as 0.1 s. The ex situ purification reaction in the deposit interior was shown to be rate-limited by reactive gas diffusion into the deposit, and deposit contraction associated with the purification process caused some lossmore » of shape retention. To circumvent the intrinsic flaws of the ex situ anneal process, in situ deposition and purification techniques were explored that resemble a direct write atomic layer deposition (ALD) process. First, we explored a laser-assisted electron-beam-induced deposition (LAEBID) process augmented with reactive gas that resulted in a 75% carbon reduction compared to standard EBID. Lastly, a sequential deposition plus purification process was also developed and resulted in deposition of pure platinum deposits with high fidelity and shape retention.« less

  20. Pulsed rotating supersonic source for merged molecular beams

    NASA Astrophysics Data System (ADS)

    Sheffield, L.; Hickey, M. S.; Krasovitskiy, V.; Rathnayaka, K. D. D.; Lyuksyutov, I. F.; Herschbach, D. R.

    2012-06-01

    We describe a pulsed rotating supersonic beam source, evolved from an ancestral device [M. Gupta and D. Herschbach, J. Phys. Chem. A 105, 1626 (2001)]. The beam emerges from a nozzle near the tip of a hollow rotor which can be spun at high-speed to shift the molecular velocity distribution downward or upward over a wide range. Here we consider mostly the slowing mode. Introducing a pulsed gas inlet system, cryocooling, and a shutter gate eliminated the main handicap of the original device in which continuous gas flow imposed high background pressure. The new version provides intense pulses, of duration 0.1-0.6 ms (depending on rotor speed) and containing ˜1012 molecules at lab speeds as low as 35 m/s and ˜1015 molecules at 400 m/s. Beams of any molecule available as a gas can be slowed (or speeded); e.g., we have produced slow and fast beams of rare gases, O2, Cl2, NO2, NH3, and SF6. For collision experiments, the ability to scan the beam speed by merely adjusting the rotor is especially advantageous when using two merged beams. By closely matching the beam speeds, very low relative collision energies can be attained without making either beam very slow.

  1. Pulsed rotating supersonic source for merged molecular beams

    NASA Astrophysics Data System (ADS)

    Sheffield, Les; Hickey, Mark; Krasovitskiy, Vitaliy; Rathnayaka, Daya; Lyuksyutov, Igor; Herschbach, Dudley

    2012-10-01

    We continue the characterization of a pulsed rotating supersonic beam source. The original device was described by M. Gupta and D. Herschbach, J. Phys. Chem. A 105, 1626 (2001). The beam emerges from a nozzle near the tip of a hollow rotor which can be spun at high-speed to shift the molecular velocity distribution downward or upward over a wide range. Here we consider mostly the slowing mode. Introducing a pulsed gas inlet system, and a shutter gate eliminate the main handicap of the original device in which continuous gas flow imposed high background pressure. The new version provides intense pulses, of duration 0.1--0.6 ms (depending on rotor speed) and containing ˜10^12 molecules at lab speeds as low as 35 m/s and ˜10^15 molecules at 400 m/s. Beams of any molecule available as a gas can be slowed (or speeded); e.g., we have produced slow and fast beams of rare gases, O2, NO2, NH3, and SF6. For collision experiments, the ability to scan the beam speed by merely adjusting the rotor is especially advantageous when using two merged beams. By closely matching the beam speeds, very low relative collision energies can be attained without making either beam very slow.

  2. Ion beam assisted deposition of MgO barriers for magnetic tunnel junctions

    SciTech Connect

    Cardoso, S.; Macedo, R. J.; Ferreira, R.; Augusto, A.; Wisniowski, P.; Freitas, P. P.

    2008-04-01

    This work reports for the first time results on MgO tunnel junctions prepared by ion beam. The MgO barrier was deposited from a ceramic MgO target using an assisted beam, following the deposition and assisted beam phase diagram which relate the beam profile with the current and energy. The deposition rate for MgO is calculated with and without assisted beam, and compared with the experimental values. The MgO film growth on Ta/CoFeB/MgO simple stacks was optimized aiming at a (002) preferred orientation for the MgO growth, measured by x-ray diffraction. The optimum assist beam energy was tuned for each deposition beam condition (+800,+1000,+1200 V), using assist beams of 40 mA ({approx}130 {mu}A/cm{sup 2}) with 0 to +600 V. Without assist beam, no texture is observed for the MgO, while the (002) orientation appears for assisted deposition. The optimum range of assist voltages is large, being limited by the onset of etching at high voltages, reducing the deposition rate. Magnetic tunnel junctions were deposited with the structure Ta 50 A/Ru 200 A/Ta 50 A/Mn{sub 78}Ir{sub 22} 150 A/Co{sub 90}Fe{sub 10} 30 A/Ru 8 A/Co{sub 56}Fe{sub 24}B{sub 20} 40 A/MgO t/Co{sub 56}Fe{sub 24}B{sub 20} 30 A/Ru 30 A/Ta 50 A, with the MgO barrier deposited with the conditions optimized by x rays. The effect of the assist beam energy on the junction properties (magnetoresistance and magnetization) are discussed. Tunnel magnetoresistance values up to 110%, with RA products of 100-400 {omega} {mu}m{sup 2}, for 11 A thick MgO barriers are obtained using assisted deposition with a +100 V assist beam, which is a major improvement of the {approx}30% of TMR, if no beam is used.

  3. Friction and Wear of Ion-Beam-Deposited Diamondlike Carbon on Chemical-Vapor-Deposited, Fine-Grain Diamond

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Wu, Richard L. C.; Lanter, William C.

    1996-01-01

    Friction and wear behavior of ion-beam-deposited diamondlike carbon (DLC) films coated on chemical-vapor-deposited (CVD), fine-grain diamond coatings were examined in ultrahigh vacuum, dry nitrogen, and humid air environments. The DLC films were produced by the direct impact of an ion beam (composed of a 3:17 mixture of Ar and CH4) at ion energies of 1500 and 700 eV and an RF power of 99 W. Sliding friction experiments were conducted with hemispherical CVD diamond pins sliding on four different carbon-base coating systems: DLC films on CVD diamond; DLC films on silicon; as-deposited, fine-grain CVD diamond; and carbon-ion-implanted, fine-grain CVD diamond on silicon. Results indicate that in ultrahigh vacuum the ion-beam-deposited DLC films on fine-grain CVD diamond (similar to the ion-implanted CVD diamond) greatly decrease both the friction and wear of fine-grain CVD diamond films and provide solid lubrication. In dry nitrogen and in humid air, ion-beam-deposited DLC films on fine-grain CVD diamond films also had a low steady-state coefficient of friction and a low wear rate. These tribological performance benefits, coupled with a wider range of coating thicknesses, led to longer endurance life and improved wear resistance for the DLC deposited on fine-grain CVD diamond in comparison to the ion-implanted diamond films. Thus, DLC deposited on fine-grain CVD diamond films can be an effective wear-resistant, lubricating coating regardless of environment.

  4. Ion-Beam-Assisted Deposition of MoS2 and Other Low-Friction Films

    DTIC Science & Technology

    1992-09-11

    Naval Research Laboratory AD-A255 222 Dunon C 203MU32 tID~li ___ NR1JMR6176-02-nM3 Ion-Beam-Assisted Deposition of MoS2 and Other Low-Friction Films...unlimited.J 13. ABSTRACT (fxMmrn, 200 iw~tds Vacuum-deposited films of molybdenum disulfide ( MoS2 ) ame effective as solid lubricants. Ion-beam...optimized and the assist beamn ion flux was quantified and found to follow a power-law relationship with beam power. The beat way to produce MoS2 films was

  5. Metallic impurities in gallium nitride grown by molecular beam epitaxy

    SciTech Connect

    McHugo, S.A.; Krueger, J.; Kisielowski, C.

    1997-04-01

    Transition metals are often encountered in trace amounts in semiconductors. They have been extensively studied in most elemental and compound systems, since they form deep donor and/or acceptor levels which usually degrade the electronic and optical material properties. Only very little is known about transition metals in recent III-V semiconducting materials, such as GaN, AlN and InN. These few studies have been done exclusively on Metal-Organic Chemical Vapor Deposition (MOCVD) or Hybrid Vapor Phase Epitaxy HVPE-grown GaN. Preliminary x-ray fluorescence studies at the Advanced Light Source, beamline 10.3.1, Lawrence Berkeley National Laboratory have revealed that GaN materials grown by Molecular Beam Epitaxy (MBE) have Fe, Ni and Cr as the dominant transition metal contaminants. This finding is commensurate with the extremely high concentrations of hydrogen, carbon and oxygen (up to 10{sup 20} cm{sup {minus}3}) measured by Secondary Ion Mass Spectroscopy (SIMS). Preliminary work using the mapping capabilities of the x-ray fluorescence microprobe revealed the metal impurities were inhomogeneously distributed over the film. Future work of this collaboration will be to find a correlation between the existence of transition metals in MBE films, as revealed by x-ray fluorescence, and Photoluminescence (PL) spectra taken in the infrared region. Also, the authors will make use of the 1 {mu}m spatial resolution of x-ray microprobe to locate the contaminants in relation to structural defects in the GaN films. Because of the large strain caused by the lattice mismatch between the GaN films and the substrates, the films grow in a columnar order with high densities of grain boundaries and dislocations. These structural defects offer preferential sites for metal precipitation or agglomeration which could degrade the optical properties of this material more so than if the impurities were left dissolved in the GaN.

  6. Ion beam energy deposition physics for ICF targets

    SciTech Connect

    Mehlhorn, T.A.

    1980-01-01

    The target interaction physics of light ion beams will be described. The phenomenon of range shortening with increasing material temperature will be corroborated, and the concomittant phenomenon of range relengthening due to ion-electron decoupling will be introduced.

  7. Influence of ion beam assisted deposition parameters on the growth of MgO and CoFeB

    SciTech Connect

    Ferreira, Ricardo; Freitas, Paulo P.; Petrova, Rumyana; McVitie, Stephen

    2012-04-01

    The effect of the kinetic parameters of an assistance ion beam on the crystallization of ion beam deposited MgO was investigated. It is shown that the crystallization of MgO in the as-deposited state is strongly dependent on the assistance beam parameters. Furthermore, two deposition regimes corresponding to different ranges of the assistance beam energy are found. XRD and TEM studies of CoFeB/MgO/CoFeB with MgO deposited in the two regimes show that CoFeB crystallization is favored when low energy assist beams are used, despite no differences being found in the MgO.

  8. Ion Beam Induced Surface Modulations from Nano to Pico: Optimizing Deposition During Erosion and Erosion During Deposition.

    SciTech Connect

    MoberlyChan, W J; Schalek, R

    2007-11-08

    Ion beams of sufficient energy to erode a surface can lead to surface modulations that depend on the ion beam, the material surface it impinges, and extrinsic parameters such as temperature and geometric boundary conditions. Focused Ion Beam technology both enables site-specific placement of these modulations and expedites research through fast, high dose and small efficient use of material. The DualBeam (FIB/SEM) enables in situ metrology, with movies observing ripple formation, wave motion, and the influence of line defects. Nanostructures (ripples of >400nm wavelength to dots spaced <40nm) naturally grow from atomically flat surfaces during erosion, however, a steady state size may or may not be achieved as a consequence of numerous controlled parameters: temperature, angle, energy, crystallography. Geometric factors, which can be easily invoked using a FIB, enable a controlled component of deposition (and/or redeposition) to occur during erosion, and conversely allow a component of etching to be incurred during (ion-beam assisted) deposition. High angles of ion beam inclination commonly lead to 'rougher' surfaces, however, the extreme case of 90.0{sup o} etching enables deposition of organized structures 1000 times smaller than the aforementioned, video-recorded nanostructures. Orientation and position of these picostructures (naturally quantized by their atomic spacings) may be controlled by the same parameters as for nanostructures (e.g. ion inclination and imposed boundary conditions, which are flexibly regulated by FIB). Judicious control of angles during FIB-CVD growth stimulates erosion with directionality that produces surface modulations akin to those observed for sputtering. Just as a diamond surface roughens from 1-D ripples to 2-D steps with increasing angle of ion sputtering, so do ripples and steps appear on carbon-grown surfaces with increase in angle of FIB-CVD. Ion beam processing has been a stalwart of the microelectronics industry, is now a

  9. Molecular beam brightening by shock-wave suppression

    PubMed Central

    Segev, Yair; Bibelnik, Natan; Akerman, Nitzan; Shagam, Yuval; Luski, Alon; Karpov, Michael; Narevicius, Julia; Narevicius, Edvardas

    2017-01-01

    Supersonic beams are a prevalent source of cold molecules used in the study of chemical reactions, atom interferometry, gas-surface interactions, precision spectroscopy, molecular cooling, and more. The triumph of this method emanates from the high densities produced in relation to other methods; however, beam density remains fundamentally limited by interference with shock waves reflected from collimating surfaces. We show experimentally that this shock interaction can be reduced or even eliminated by cryocooling the interacting surface. An increase of nearly an order of magnitude in beam density was measured at the lowest surface temperature, with no further fundamental limitation reached. Visualization of the shock waves by plasma discharge and reproduction with direct simulation Monte Carlo calculations both indicate that the suppression of the shock structure is partially caused by lowering the momentum flux of reflected particles and significantly enhanced by the adsorption of particles to the surface. We observe that the scaling of beam density with source pressure is recovered, paving the way to order-of-magnitude brighter, cold molecular beams. PMID:28345047

  10. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    SciTech Connect

    Lewis, Brett B.; Stanford, Michael G.; Fowlkes, Jason D.; Lester, Kevin; Plank, Harald; Rack, Philip D.

    2015-01-01

    In this paper, platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IV)Me3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. Finally, in addition to purification, the post-deposition electron stimulated oxygen purification process enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention.

  11. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    DOE PAGES

    Lewis, Brett B.; Stanford, Michael G.; Fowlkes, Jason D.; ...

    2015-01-01

    In this paper, platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IV)Me3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. Finally, in addition to purification, the post-deposition electron stimulated oxygen purification process enhancesmore » the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention.« less

  12. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    PubMed Central

    Lewis, Brett B; Stanford, Michael G; Fowlkes, Jason D; Lester, Kevin; Plank, Harald

    2015-01-01

    Summary Platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IV)Me3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. In addition to purification, the post-deposition electron stimulated oxygen purification process enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention. PMID:25977862

  13. Recent Studies of Chemical Interactions on Surfaces Using Molecular Beams

    DTIC Science & Technology

    1976-01-26

    model we also expect the "temperature" of the desorbing molecules to be less than S the surface temperature, in analogy with the effects of a positive...implicationsp as uo n s stWe@ Of Weei6Mo 1Asemical reactions, including simle dmiinlemalw c ito esett nns with the surface itself and finally srfm ce...the beam species e lences a sinsle collsion at a well defined scattering angle. 2 S King and Wells have exploited the advantages of molecular beam to

  14. Diffusion and Interface Reaction of Cu/Si (100) Films Prepared by Cluster Beam Deposition

    NASA Astrophysics Data System (ADS)

    Gao, Xing-Xin; Jia, Yan-Hui; Li, Gong-Ping; Cho, Seong-Jin; Kim, Hee

    2011-03-01

    Cu thin films are deposited on Si (100) substrates by neutral cluster beams and ionized cluster beams. The atomic diffusion and interface reaction between the Cu films and the Si substrates of as-deposited and annealed at different temperatures (230°C, 450°C, 500°C and 600°C) are investigated by Rutherford backscattering spectrometry (RBS) and x-ray diffraction (XRD). Some significant results are obtained on the following aspects: (1) For the Cu/Si(100) samples prepared by neutral cluster beams and ionized cluster beams at Va = 0kV, atomic diffusion phenomena are observed clearly in the as-deposited samples. With the increase of annealing temperature, the interdiffusion becomes more apparent. However, the diffusion intensities of the RBS spectra of the Cu/Si(100) films using neutral cluster beams are always higher than that of the Cu/Si(100) films using ionized cluster beams at Va=0kV in the as-deposited and samples annealed at the same temperature. The compound of Cu3Si is observed in the as-deposited samples. (2) For the Cu/Si(100) samples prepared by ionized cluster beams at Va=1, 3, 5kV, atomic diffusion phenomena are observed in the as-deposited samples at Va=1, 5kV. For the samples prepared at Va = 3kV, the interdiffusion phenomenon is observed until 500°C annealing temperature. The reason for the difference is discussed.

  15. Ion beam assisted deposition of tribological coatings. Quarterly summary

    SciTech Connect

    Sartwell, B.D.

    1993-04-01

    TiN coatings 5 micrometers thick were deposited in UHV IBAD chamber onto M50 and Si substrates over a wide range of R (Ar-ion-to-Ti-atom ratio) values. Sputtering reduced the actual thickness at high R values, with two out of every three deposited Ti atoms being removed at R = 0.7. Because of charge exchange neutralization, it was possible to obtain coatings in the UHV IBAD system with properties equivalent to those deposited in the high vacuum IBAD system by using a higher apparent R value. Unless the extent of the charge exchange neutralization is known, it will not be possible to duplicate coating properties. Adhesion of the thick TiN coating deposited at R - 0.5 was equivalent to a magnetron sputtered TiN coating. Thick Cr{sub 2}O{sub 3} coatings were deposited onto M50 and Si substrates and wear testing was initiated. At high R values, sputtering prevented chemisorption of oxygen at surface. The wear process eliminated most of the surface topography.

  16. Chemical modification of the poly(vinylidene fluoride-trifluoroethylene) copolymer surface through fluorocarbon ion beam deposition

    SciTech Connect

    Hsu, W.-D.; Jang, Inkook; Sinnott, Susan B.

    2007-07-15

    Classical molecular dynamics simulations are used to study the effects of continuous fluorocarbon ion beam deposition on a poly(vinylidene fluoride-trifluoroethylene) [P(VDF-trFE)] surface, a polymer with electromechanical properties. Fluorocarbon plasma processing is widely used to chemically modify surfaces and deposit thin films. It is well accepted that polyatomic ions and neutrals within low-energy plasmas have a significant effect on the surface chemistry induced by the plasma. The deposition of mass selected fluorocarbon ions is useful to isolate the effects specific to polyatomic ions. Here, the differences in the chemical interactions of C{sub 3}F{sub 5}{sup +} and CF{sub 3}{sup +} ions with the P(VDF-trFE) surface are examined. The incident energy of the ions in both beams is 50 eV. The CF{sub 3}{sup +} ions are predicted to be more effective at fluorinating the P(VDF-trFE) surface than C{sub 3}F{sub 5}{sup +} ions. At the same time, the C{sub 3}F{sub 5}{sup +} ions are predicted to be more effective at growing fluorocarbon thin films. The simulations also reveal how the deposition process might ultimately modify the electromechanical properties of this polymer surface.

  17. Energy deposition, heat flow, and rapid solidification during laser and electron beam irradiation of materials

    SciTech Connect

    White, C.W.; Aziz, M.J.

    1985-10-01

    The fundamentals of energy deposition, heat flow, and rapid solidification during energy deposition from lasers and electron beams is reviewed. Emphasis is placed on the deposition of energy from pulsed sources (10 to 100 ns pulse duration time) in order to achieve high heating and cooling rates (10/sup 8/ to 10/sup 10/ /sup 0/C/s) in the near surface region. The response of both metals and semiconductors to pulsed energy deposition is considered. Guidelines are presented for the choice of energy source, wavelength, and pulse duration time.

  18. Molecular structure of vapor-deposited amorphous selenium

    NASA Astrophysics Data System (ADS)

    Goldan, A. H.; Li, C.; Pennycook, S. J.; Schneider, J.; Blom, A.; Zhao, W.

    2016-10-01

    The structure of amorphous selenium is clouded with much uncertainty and contradictory results regarding the dominance of polymeric chains versus monomer rings. The analysis of the diffraction radial distribution functions are inconclusive because of the similarities between the crystalline allotropes of selenium in terms of the coordination number, bond length, bond angle, and dihedral angle. Here, we took a much different approach and probed the molecular symmetry of the thermodynamically unstable amorphous state via analysis of structural phase transformations. We verified the structure of the converted metastable and stable crystalline structures using scanning transmission electron microscopy. In addition, given that no experimental technique can tell us the exact three-dimensional atomic arrangements in glassy semiconductors, we performed molecular-dynamic simulations using a well-established empirical three-body interatomic potential. We developed a true vapor-deposited process for the deposition of selenium molecules onto a substrate using empirical molecular vapor compositions and densities. We prepared both vapor-deposited and melt-quenched samples and showed that the simulated radial distribution functions match very well to experiment. The combination of our experimental and molecular-dynamic analyses shows that the structures of vapor- and melt-quenched glassy/amorphous selenium are quite different, based primarily on rings and chains, respectively, reflecting the predominant structure of the parent phase in its thermodynamic equilibrium.

  19. GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al{sub 2}O{sub 3} gate oxide

    SciTech Connect

    Merckling, C.; Brammertz, G.; Hoffmann, T. Y.; Caymax, M.; Dekoster, J.; Sun, X.; Alian, A.; Heyns, M.; Afanas'ev, V. V.

    2011-04-01

    The integration of high carrier mobility materials into future CMOS generations is presently being studied in order to increase drive current capability and to decrease power consumption in future generation CMOS devices. If III-V materials are the candidates of choice for n-type channel devices, antimonide-based semiconductors present high hole mobility and could be used for p-type channel devices. In this work we first demonstrate the heteroepitaxy of fully relaxed GaSb epilayers on InP(001) substrates. In a second part, the properties of the Al{sub 2}O{sub 3}/GaSb interface have been studied by in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric. The interface is abrupt without any substantial interfacial layer, and is characterized by high conduction and valence band offsets. Finally, MOS capacitors show well-behaved C-V with relatively low D{sub it} along the bandgap, these results point out an efficient electrical passivation of the Al{sub 2}O{sub 3}/GaSb interface.

  20. Use of molecular beams for kinetic measurements of chemical reactions on solid surfaces

    NASA Astrophysics Data System (ADS)

    Zaera, Francisco

    2017-05-01

    more realistic models for catalysis, using surfaces comprised of metal nanoparticles dispersed on the oxide surfaces used as catalyst support and high-flux beams to approach the pressures used in catalysis. The next section deals with the study of systems associated with fields other than catalysis, mainly with the etching and oxidation of semiconductor surfaces and with the chemistry used to grow thin solid films by chemical means (chemical vapor deposition, CVD, or atomic layer deposition, ALD). We end with a personal assessment of the past accomplishments, present state, and future promise of the use of molecular beams for the study of the kinetics of surface reactions relevant to practical applications.

  1. Corrosion properties of aluminium coatings deposited on sintered NdFeB by ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Mao, Shoudong; Yang, Hengxiu; Li, Jinlong; Huang, Feng; Song, Zhenlun

    2011-04-01

    Pure Al coatings were deposited by direct current (DC) magnetron sputtering to protect sintered NdFeB magnets. The effects of Ar+ ion-beam-assisted deposition (IBAD) on the structure and the corrosion behaviour of Al coatings were investigated. The Al coating prepared by DC magnetron sputtering with IBAD (IBAD-Al-coating) had fewer voids than the coating without IBAD (Al-coating). The corrosion behaviour of the Al-coated NdFeB specimens was investigated by potentiodynamic polarisation, a neutral salt spray (NSS) test, and electrochemical impedance spectroscopy (EIS). The pitting corrosion of the Al coatings always began at the voids of the grain boundaries. Bombardment by the Ar+ ion-beams effectively improved the corrosion resistance of the IBAD-Al-coating.

  2. Ion beam assisted deposition of hydrogenated amorphous silicon nitride

    NASA Astrophysics Data System (ADS)

    Hubler, G. K.; Donovan, E. P.; Gossett, C. R.

    1994-06-01

    Hydrogenated silicon nitride films were produced near room temperature by electron beam evaporation of Si and simultaneous bombardment with a 500 eV ammonia ion beam from a Kaufman ion source and for a variety of ratios of incident charge to evaporant fluxes. The composition of N, Si and H in the films as a function of ion current density was measured by means of Rutherford backscattering and elastic recoil detection analyses. Reflection and transmission spectroscopy in the wavelength range 400 nm to 3125 nm were employed to measure optical thickness and refractive index. From the data we extracted the number of nitrogen atoms in the ammonia beam per unit charge collected, the sputtering coefficient for ammonia incident on Si, and the refractive index versus composition of the alloys. At the highest N composition, the films were clear in the visible with the UV cut-off less than 400 nm, the index was 1.80 which is lower than that of pure Si3N4 and the H content was as high as 27 at.%.

  3. Pulsed Molecular Beams For Growth Of InAs On GaAs

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J.

    1989-01-01

    Pauses for annealing reduce number of defects. Deposition process that includes pulsed molecular beams produces high-quality epitaxial layers of indium arsenide on gallium arsenide substrates. Layers made as much as 30 atoms thick without introducing excessive numbers of dislocations, despite 7.4-percent mismatch between InAs and GaAs crystal lattices. Layers offer superior electrical properties in such devices as optically addressed light modulators, infrared sensors, semiconductor lasers, and high-electron-mobility transistors. Technique applicable to other epitaxial systems in which lattices highly mismatched.

  4. Growth of strontium ruthenate films by hybrid molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Marshall, Patrick B.; Kim, Honggyu; Ahadi, Kaveh; Stemmer, Susanne

    2017-09-01

    We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered in traditional molecular beam epitaxy that uses elemental metal sources. Phase-pure, epitaxial thin films of Sr2RuO4 are obtained. At high substrate temperatures, growth proceeds in a layer-by-layer mode with intensity oscillations observed in reflection high-energy electron diffraction. Films are of high structural quality, as documented by x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The method should be suitable for the growth of other complex oxides containing ruthenium, opening up opportunities to investigate thin films that host rich exotic ground states.

  5. Carbon molecular beam epitaxy on various semiconductor substrates

    SciTech Connect

    Jerng, S.K.; Yu, D.S.; Lee, J.H.; Kim, Y.S.; Kim, C.; Yoon, S.; Chun, S.H.

    2012-10-15

    Direct graphene growth on semiconductor substrates is an important goal for successful integration of graphene with the existing semiconductor technology. We test the feasibility of this goal by using molecular beam epitaxy on various semiconductor substrates: group IV (Si, SiC), group III–V (GaAs, GaN, InP), and group II–VI (ZnSe, ZnO). Graphitic carbon has been formed on most substrates except Si. In general, the crystallinities of carbon layers are better on substrates of hexagonal symmetry than those on cubic substrates. The flatness of graphitic carbon grown by molecular beam epitaxy is noticeable, which may help the integration with semiconductor structures.

  6. Resistively Heated SiC Nozzle for Generating Molecular Beams

    NASA Technical Reports Server (NTRS)

    Cagiano, Steven; Abell, Robert; Patrick, Edward; Bendt, Miri; Gundersen, Cynthia

    2007-01-01

    An improved nozzle has been developed to replace nozzles used previously in an apparatus that generates a substantially unidirectional beam of molecules passing through a vacuum at speeds of several kilometers per second. The basic principle of operation of the apparatus is the same for both the previous and the present nozzle designs. The main working part of the nozzle is essentially a cylinder that is closed except that there is an inlet for a pressurized gas and, at one end, the cylinder is closed by a disk that contains a narrow central hole that serves as an outlet. The cylinder is heated to increase the thermal speeds of the gas molecules into the desired high-speed range. Heated, pressurized gas escapes through the outlet into a portion of the vacuum chamber that is separated, by a wall, from the rest of the vacuum chamber. In this portion of the vacuum chamber, the gas undergoes a free jet expansion. Most of the expanded gas is evacuated and thus does not become part of the molecular beam. A small fraction of the expanded beam passes through a narrow central orifice in the wall and thereby becomes a needle- thin molecular beam in the portion of the vacuum on the downstream side of the wall.

  7. Optimization of Uranium Molecular Deposition for Alpha-Counting Sources

    SciTech Connect

    Monzo, Ellen; Parsons-Moss, Tashi; Genetti, Victoria; Knight, Kimberly

    2016-12-12

    Method development for molecular deposition of uranium onto aluminum 1100 plates was conducted with custom plating cells at Lawrence Livermore National Laboratory. The method development focused primarily on variation of electrode type, which was expected to directly influence plated sample homogeneity. Solid disc platinum and mesh platinum anodes were compared and data revealed that solid disc platinum anodes produced more homogenous uranium oxide films. However, the activity distribution also depended on the orientation of the platinum electrode relative to the aluminum cathode, starting current, and material composition of the plating cell. Experiments demonstrated these variables were difficult to control under the conditions available. Variation of plating parameters among a series of ten deposited plates yielded variations up to 30% in deposition efficiency. Teflon particles were observed on samples plated in Teflon cells, which poses a problem for alpha activity measurements of the plates. Preliminary electropolishing and chemical polishing studies were also conducted on the aluminum 1100 cathode plates.

  8. Molecular dynamics simulation of gold cluster growth during sputter deposition

    NASA Astrophysics Data System (ADS)

    Abraham, J. W.; Strunskus, T.; Faupel, F.; Bonitz, M.

    2016-05-01

    We present a molecular dynamics simulation scheme that we apply to study the time evolution of the self-organized growth process of metal cluster assemblies formed by sputter-deposited gold atoms on a planar surface. The simulation model incorporates the characteristics of the plasma-assisted deposition process and allows for an investigation over a wide range of deposition parameters. It is used to obtain data for the cluster properties which can directly be compared with recently published experimental data for gold on polystyrene [M. Schwartzkopf et al., ACS Appl. Mater. Interfaces 7, 13547 (2015)]. While good agreement is found between the two, the simulations additionally provide valuable time-dependent real-space data of the surface morphology, some of whose details are hidden in the reciprocal-space scattering images that were used for the experimental analysis.

  9. Molecular dynamics simulation of gold cluster growth during sputter deposition

    SciTech Connect

    Abraham, J. W. Bonitz, M.; Strunskus, T.; Faupel, F.

    2016-05-14

    We present a molecular dynamics simulation scheme that we apply to study the time evolution of the self-organized growth process of metal cluster assemblies formed by sputter-deposited gold atoms on a planar surface. The simulation model incorporates the characteristics of the plasma-assisted deposition process and allows for an investigation over a wide range of deposition parameters. It is used to obtain data for the cluster properties which can directly be compared with recently published experimental data for gold on polystyrene [M. Schwartzkopf et al., ACS Appl. Mater. Interfaces 7, 13547 (2015)]. While good agreement is found between the two, the simulations additionally provide valuable time-dependent real-space data of the surface morphology, some of whose details are hidden in the reciprocal-space scattering images that were used for the experimental analysis.

  10. A Pulsed Laser and Molecular Beam Apparatus for Surface Studies

    DTIC Science & Technology

    1985-03-01

    PRFCAMING ORCANIZATION REPORT NuMSWIS b MONITORING ORGANIZATION RPR :6P" _________ ______._ _ I0 0 1 I &PO*R.TR. o u 1 6NAEOF PERFORMING ORGANIZATION 5.OFFICE...with a second pulsed molecular beam, and the course of the reaction may be followed using several new pulsed surface analysis techniques under...available for electrical and manipulation feedthroughs, roughing and gas inlet lines, as well as special viewports (quartz or MgF 2) for the passage of UV

  11. Applications of Ion-Beam Milling and Deposition Techniques to HEL (High Energy Laser) Optics.

    DTIC Science & Technology

    1981-11-23

    using a Twyman -Green interferometer with one leg in the vacuum deposition chamber ........ ...................... .. 14 Figure 3. Deomonstration of...of beam current and voltage. 13 b) I Figure 2. Photographs of interference pattern produced using a Twyman -Green interferometer with one leg in the...Measurements of optical surface roughness were made versus milling depth for various ion beam conditions and geometry arrangements. A Twyman -Green

  12. Beam-deposited platinum as versatile catalyst for bottom-up silicon nanowire synthesis

    SciTech Connect

    Hibst, N.; Strehle, S.; Knittel, P.; Kranz, C.; Mizaikoff, B.

    2014-10-13

    The controlled localized bottom-up synthesis of silicon nanowires on arbitrarily shaped surfaces is still a persisting challenge for functional device assembly. In order to address this issue, electron beam and focused ion beam-assisted catalyst deposition have been investigated with respect to platinum expected to form a PtSi alloy catalyst for a subsequent bottom-up nanowire synthesis. The effective implementation of pure platinum nanoparticles or thin films for silicon nanowire growth has been demonstrated recently. Beam-deposited platinum contains significant quantities of amorphous carbon due to the organic precursor and gallium ions for a focused ion beam-based deposition process. Nevertheless, silicon nanowires could be grown on various substrates regardless of the platinum purity. Additionally, p-type doping could be realized with diborane whereas n-type doping suppressed a nanowire growth. The rational utilization of this beam-assisted approach enables us to control the localized synthesis of single silicon nanowires at planar surfaces but succeeded also in single nanowire growth at the three-dimensional apex of an atomic force microscopy tip. Therefore, this catalyst deposition method appears to be a unique extension of current technologies to assemble complex nanowire-based devices.

  13. Optical and scratch resistant properties of diamondlike carbon films deposited with single and dual ion beams

    NASA Technical Reports Server (NTRS)

    Kussmaul, Michael T.; Bogdanski, Michael S.; Banks, Bruce A.; Mirtich, Michael J.

    1993-01-01

    Amorphous diamondlike carbon (DLC) films were deposited using both single and dual ion beam techniques utilizing filament and hollow cathode ion sources. Continuous DLC films up to 3000 A thick were deposited on fused quartz plates. Ion beam process parameters were varied in an effort to create hard, clear films. Total DLC film absorption over visible wavelengths was obtained using a Perkin-Elmer spectrophotometer. An ellipsometer, with an Ar-He laser (wavelength 6328 A) was used to determine index of refraction for the DLC films. Scratch resistance and frictional and adherence properties were determined for select films. Applications for these films range from military to the ophthalmic industries.

  14. Optical and Scratch Resistant Properties of Diamondlike Carbon Films Deposited with Single and Dual Ion Beams

    NASA Technical Reports Server (NTRS)

    Kussmaul, Michael T.; Bogdanski, Michael S.; Banks, Bruce A.; Mirtich, Michael J.

    1993-01-01

    Amorphous diamond-like carbon (DLC) films were deposited using both single and dual ion beam techniques utilizing filament and hollow cathode ion sources. Continuous DLC films up to 3000 A thick were deposited on fused quartz plates. Ion beam process parameters were varied in an effort to create hard, clear films. Total DLC film absorption over visible wavelengths was obtained using a Perkin-Elmer spectrophotometer. An ellipsometer, with an Ar-He laser (wavelength 6328 A) was used to determine index of refraction for the DLC films. Scratch resistance, frictional, and adherence properties were determined for select films. Applications for these films range from military to the ophthalmic industries.

  15. Single-crystal nanowires grown via electron-beam-induced deposition

    SciTech Connect

    Klein, Kate L; Randolph, Steven J; Fowlkes, Jason Davidson; Allard Jr, Lawrence Frederick; Meyer III, Harry M; Simpson, Michael L; Rack, Philip D

    2008-01-01

    Electron-beam-induced deposition (EBID) is a useful technique for direct-writing of 3-dimensional dielectric, semiconductor, and metallic materials with nanoscale precision and resolution. The EBID process, however, has been limited in many cases because precursor byproducts (typically from organic precursors like W(CO)6) are incorporated into the deposited material resulting in contaminated and amorphous structures. In this manuscript, we have investigated the structure and composition of EBID tungsten nanostructures as-deposited from a tungsten hexafluoride (WF6) precursor. High-resolution transmission electron microscopy, electron diffraction and electron spectroscopy were employed to determine the effects that the electron beam scanning conditions have on the deposit characteristics. The results show that slow, one-dimensional lateral scanning produces textured -tungsten nanowire cores surrounded by an oxide secondary layer, while stationary vertical growth leads to single-crystal [100]-oriented W3O nanowires. Furthermore we correlate how the growth kinetics affect the resultant nanowire structure and composition.

  16. Photocatalytic activity of nanostructured TiO2 films produced by supersonic cluster beam deposition

    NASA Astrophysics Data System (ADS)

    Della Foglia, Flavio; Losco, Tonia; Piseri, Paolo; Milani, Paolo; Selli, Elena

    2009-08-01

    The photocatalytic activity of thin, nanostructured films of titanium dioxide, synthesized by supersonic cluster beam deposition (SCBD) from the gas phase, has been investigated employing the photodegradation of salicylic acid as test reaction. Because of the low deposition energy, the so-deposited highly porous TiO2 films are composed of nanoparticles maintaining their original properties in the film, which can be fully controlled by tuning the deposition and post-deposition treatment conditions. A systematic investigation on the evolution of light absorption properties and photoactivity of the films in relation to their morphology, determined by AFM analysis, and phase composition, determined by Raman spectroscopy, has been performed. The absorption and photocatalytic activity of the nanostructured films in the visible region could be enhanced either through post-deposition annealing treatment in ammonia containing atmosphere or employing mild oxidation conditions, followed by annealing in N2 at 600 °C.

  17. Properties of ITO thin films deposited on amorphous and crystalline substrates with e-beam evaporation

    NASA Astrophysics Data System (ADS)

    Wang, R. X.; Beling, C. D.; Djurisic, A. B.; Li, S.; Fung, S.

    2004-06-01

    Indium tin oxide (ITO) thin films were deposited using the e-beam evaporation method on amorphous and crystalline substrates under identical conditions. The properties of the films were investigated using optical transmittance, XRD and XPS techniques. It was found that the properties of the films depend strongly on the nature of the substrate surface. Analysis suggests that changes in chemical composition and microstructure of the ITO films deposited on crystalline and amorphous substrates are responsible for the differences in optical properties.

  18. Focused electron beam induced deposition of copper with high resolution and purity from aqueous solutions

    NASA Astrophysics Data System (ADS)

    Esfandiarpour, Samaneh; Boehme, Lindsay; Hastings, J. Todd

    2017-03-01

    Electron-beam induced deposition of high-purity copper nanostructures is desirable for nanoscale rapid prototyping, interconnection of chemically synthesized structures, and integrated circuit editing. However, metalorganic, gas-phase precursors for copper introduce high levels of carbon contamination. Here we demonstrate electron beam induced deposition of high-purity copper nanostructures from aqueous solutions of copper sulfate. The addition of sulfuric acid eliminates oxygen contamination from the deposit and produces a deposit with ∼95 at% copper. The addition of sodium dodecyl sulfate (SDS), Triton X-100, or polyethylene glycole (PEG) improves pattern resolution and controls deposit morphology but leads to slightly reduced purity. High resolution nested lines with a 100 nm pitch are obtained from CuSO4–H2SO4–SDS–H2O. Higher aspect ratios (∼1:1) with reduced line edge roughness and unintended deposition are obtained from CuSO4–H2SO4–PEG–H2O. Evidence for radiation-chemical deposition mechanisms was observed, including deposition efficiency as high as 1.4 primary electrons/Cu atom.

  19. Focused electron beam induced deposition of copper with high resolution and purity from aqueous solutions.

    PubMed

    Esfandiarpour, Samaneh; Boehme, Lindsay; Hastings, J Todd

    2017-03-24

    Electron-beam induced deposition of high-purity copper nanostructures is desirable for nanoscale rapid prototyping, interconnection of chemically synthesized structures, and integrated circuit editing. However, metalorganic, gas-phase precursors for copper introduce high levels of carbon contamination. Here we demonstrate electron beam induced deposition of high-purity copper nanostructures from aqueous solutions of copper sulfate. The addition of sulfuric acid eliminates oxygen contamination from the deposit and produces a deposit with ∼95 at% copper. The addition of sodium dodecyl sulfate (SDS), Triton X-100, or polyethylene glycole (PEG) improves pattern resolution and controls deposit morphology but leads to slightly reduced purity. High resolution nested lines with a 100 nm pitch are obtained from CuSO4-H2SO4-SDS-H2O. Higher aspect ratios (∼1:1) with reduced line edge roughness and unintended deposition are obtained from CuSO4-H2SO4-PEG-H2O. Evidence for radiation-chemical deposition mechanisms was observed, including deposition efficiency as high as 1.4 primary electrons/Cu atom.

  20. Energy deposition of heavy ions in the regime of strong beam-plasma correlations.

    PubMed

    Gericke, D O; Schlanges, M

    2003-03-01

    The energy loss of highly charged ions in dense plasmas is investigated. The applied model includes strong beam-plasma correlation via a quantum T-matrix treatment of the cross sections. Dynamic screening effects are modeled by using a Debye-like potential with a velocity dependent screening length that guarantees the known low and high beam velocity limits. It is shown that this phenomenological model is in good agreement with simulation data up to very high beam-plasma coupling. An analysis of the stopping process shows considerably longer ranges and a less localized energy deposition if strong coupling is treated properly.

  1. Inhomogeneity Effects on Dose Deposition for Photon and Electron Beams

    NASA Astrophysics Data System (ADS)

    Yu, Xinsheng

    1989-03-01

    A long-standing problem in radiation therapy has been to correct the dose distributions for the presence of inhomogeneities. The availability of CT and MRI imaging for treatment planning has led to many new algorithms for making such corrections. Unfortunately, each of these methods shows a limited range of validity outside of which errors exceeding 10% may occur due to the assumptions made in the algorithm. In order for valid assumptions to be made, the physical processes involved in the perturbation effects of inhomogeneities on radiation dose deposition must be identified and understood. The work presented in this thesis is to achieve this goal. Inhomogeneity effects on photon dose deposition have been studied by means of experimental measurements and theoretical simulations. The results indicated that changes in atomic number could result in large changes in dose by perturbing the transport of the secondary electrons. Electron transport theory was then studied with the emphasis on the electron multiple scattering. The small angle approximation in the Fermi-Eyges theory and the assumption of semi-infinite slab geometry in current electron dose calculation algorithms were found to cause inaccurate prediction of dose in the vicinity of local inhomogeneities. Using the concept of mean path, a new multiray model has been derived, which is sensitive to local inhomogeneities and gives good agreement with Monte -Carlo simulations. Based on the understanding of both photon and electron transport, a new photon-electron cascade model is proposed for calculating photon dose deposition. The model explicitly includes the transport of the secondary charged particles and is applicable for the presence of inhomogeneities with different electron densities and atomic numbers.

  2. An all-optical velocity filter and beam splitter for generating cold molecular beams: a proposal and simulation

    NASA Astrophysics Data System (ADS)

    Li, Xingjia; Liu, Runqin; Yin, Jianping

    2015-12-01

    In order to generate one or two cold molecular beams that have neither a permanent electric dipole moment nor a magnetic dipole one, a controllable scheme to form an all-optical velocity filter and molecular beam splitter by using two red-detuned, crossing and cavity-enhanced guiding laser beams is proposed, and both the dynamic velocity filtering and beam splitting processes of the guided cold I2 molecular beam are studied by using the three-dimensional Monte Carlo method. Our study shows that by adjusting the laser power difference between the two guiding laser beams from -124 W to 124 W, a splitting ratio of the two-arm output molecular beams from about 10.3% to 89.7% can be obtained. Also, by adjusting the intersection angle between the two standing wave cavities from 80° to 10°, an adjustable splitting ratio from about 1.6% to 98.4% can be obtained. If the intersection angle between the guided oblique beam and the guided straight beam is set to 80°, a cold I2 molecular beam with a full-width at half-maximum longitudinal velocity of 1 m s-1 and a longitudinal temperature of 8 mK can be generated by using an all-optical velocity filter.

  3. Synthesis of single source molecular precursors for copper indium diselenide and copper indium disulfide production via confined plume chemical deposition

    NASA Astrophysics Data System (ADS)

    Jackson, Jason D.

    A one-step process for preparing coatings of known photovoltaic materials on either inorganic or organic substrates is reported. IR laser (2.94 microm wavelength) and femtosecond visible laser (800 nm wavelength) irradiation of single-source molecular precursors layered between transparent supports under temporal and spatial confinement at a laser wavelength (2.94 microm or 800 nm) resonant with a precursor vibrational band gives one-step deposition of copper indium diselenide (CISe) or copper indium disulfide (CIS) without incurring noticeable collateral thermal damage to the substrate material. Reaction plume formation at the precursor/laser beam interface initiates confined plume, chemical deposition (CPCD) of nano CIS product. Continuous coatings are produced by rastering the laser beam over a sample specimen. CPCD processing of precursors 1-6 on confined substrates, ultra high molecular weight polyethylene (UHMWPE)/glass, and glass/sapphire gives CISe, CIS respectively.

  4. Thermal stability of AlN films prepared by ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Meng, Jian-ping; Liu, Xiao-peng; Fu, Zhi-qiang; Wang, Xiao-jing; Hao, Lei

    2015-08-01

    The thermal stability of AlN films deposited by ion beam assisted deposition was performed at 600 °C for 192 h under air ambient. The composition, morphology and optical properties were studied by X-ray photoelectron spectrometer, transmission electron microscopy, scanning electron microscopy, spectroscopic ellipsometry and UV-vis spectroscopy. The results show that the deposited film is polycrystalline, smooth, dense and homogenous. The oxidation of grain boundary takes place due to the element diffusion in the polycrystalline material. Oxidation produces amorphous oxide layers on the surface of film. As annealing time increases, surface roughness and diffuse reflection increase. Annealing has little influence on refractive index and extinction coefficient.

  5. In situ observation on electron beam induced chemical vapor deposition by Auger electron spectroscopy

    SciTech Connect

    Matsui, S.; Mori, K.

    1987-08-31

    W deposition, using WF/sub 6/ gas source by electron beam induced surface reaction, has been studied by Auger electron spectroscopy. W Auger electron signals have been observed for WF/sub 6/ adlayer by Auger electron spectroscopy. Moreover, initial growth for W deposition has been observed in situ by Auger electron spectroscopy. As a result, it became clear that a growth rate for W deposition is proportional to WF/sub 6/ gas pressure and can be --1 A/min at 2 x 10/sup -7/ Torr.

  6. Annealing of TiO2 Films Deposited on Si by Irradiating Nitrogen Ion Beams

    SciTech Connect

    Yokota, Katsuhiro; Yano, Yoshinori; Miyashita, Fumiyoshi

    2006-11-13

    Thin TiO2 films were deposited on Si at a temperature of 600 deg. C by an ion beam assisted deposition (IBAD) method. The TiO2 films were annealed for 30 min in Ar at temperatures below 700 deg. C. The as-deposited TiO2 films had high permittivities such 200 {epsilon}o and consisted of crystallites that were not preferentially oriented to the c-axis but had an expanded c-axis. On the annealed TiO2 films, permittivities became lower with increasing annealing temperature, and crystallites were oriented preferentially to the (110) plane.

  7. Superconductivity in artificial cuprate structures grown by laser molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Tebano, A.; Aruta, C.; Boggio, N. G.; Medaglia, P. G.; Balestrino, G.

    2006-03-01

    Pulsed laser deposition in a molecular beam epitaxy environment has been used to deposit high quality thin films of BaCuO2+x,CaCuO2, and superconducting (BaCuO2+x)2/(CaCuO2)2 artificial superlattices. In situ reflection high energy electron diffraction (RHEED) has shown that the growth mechanism is two dimensional, and ex situ x-ray diffraction spectra confirmed the growth rate deduced from RHEED oscillations. The BaCuO2+x,CaCuO2 films alone are not superconducting; however, in infinite layer based heterostructures the occurrence of charge transfer amongst layers containing different alkaline earth ions can give rise to superconductivity. Structural features of these heterostructures can be engineered over a wide range and, consequently, their superconducting properties studied.

  8. Optical band gap of BiFeO{sub 3} grown by molecular-beam epitaxy

    SciTech Connect

    Ihlefeld, J. F.; Podraza, N. J.; Liu, Z. K.; Schlom, D. G.; Rai, R. C.; Xu, X.; Musfeldt, J. L.; Heeg, T.; Schubert, J.; Chen, Y. B.; Pan, X. Q.; Li, J.; Collins, R. W.; Ramesh, R.

    2008-04-07

    BiFeO{sub 3} thin films have been deposited on (001) SrTiO{sub 3} substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFeO{sub 3} films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with {omega} rocking curve full width at half maximum values as narrow as 29 arc sec (0.008 deg.). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74 eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFeO{sub 3} films.

  9. Growth of MoO3 films by oxygen plasma assisted molecular beam epitaxy

    SciTech Connect

    Altman, Eric I.; Droubay, Timothy C.; Chambers, Scott A.

    2002-07-22

    The growth of MoO₃ films on SrLaAlO₄(0 0 1), a substrate lattice-matched to b-MoO , by oxygen plasma assisted molecular beam epitaxy was characterized using reflection high-energy electron diffraction (RHEED), X-ray photoelectron spectroscopy, Xray diffraction (XRD), and atomic force and scanning tunneling microscopies (AFM and STM).It was found that the flux of reactive oxygen species to the surface was not high enough to maintain the proper stoichiometry, even at the lowest measurable deposition rates. Therefore, the films were grown by depositing Mo in small increments and then allowing the Mo to oxidize. At 675 K, the films grew epitaxially but in a three-dimensional manner. XRD of films grown under these conditions revealed atetragonal structure that has not been previously observed in bulk MoO₃ samples.

  10. Influence of Molecular Shape on Molecular Orientation and Stability of Vapor-Deposited Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Walters, Diane M.; Johnson, Noah D.; Ediger, M. D.

    Physical vapor deposition is commonly used to prepare active layers in organic electronics. Recently, it has been shown that molecular orientation and packing can be tuned by changing the substrate temperature during deposition, while still producing macroscopically homogeneous films. These amorphous materials can be highly anisotropic when prepared with low substrate temperatures, and they can exhibit exceptional kinetic stability; films retain their favorable packing when heated to high temperatures. Here, we study the influence of molecular shape on molecular orientation and stability. We investigate disc-shaped molecules, such as TCTA and m-MTDATA, nearly spherical molecules, such as Alq3, and linear molecules covering a broad range of aspect ratios, such as p-TTP and BSB-Cz. Disc-shaped molecules have preferential horizontal orientation when deposited at low substrate temperatures, and their orientation can be tuned by changing the substrate temperature. Alq3 forms stable, amorphous films that are optically isotropic when vapor deposited over a broad range of substrate temperatures. This work may guide the choice of material and deposition conditions for vapor-deposited films used in organic electronics and allow for more efficient devices to be fabricated.

  11. BN coatings deposition by magnetron sputtering of B and BN targets in electron beam generated plasma

    NASA Astrophysics Data System (ADS)

    Kamenetskikh, A. S.; Gavrilov, N. V.; Koryakova, O. V.; Cholakh, S. O.

    2017-05-01

    Boron nitride coatings were deposited by reactive pulsed magnetron sputtering of B and BN targets (50 kHz, 10 µs for B; 13.56 MHz for BN) at 2-20 mA/cm2 ion current density on the substrate. The effect of electron beam generated plasma on characteristics of magnetron discharge and phase composition of coatings was studied.

  12. Simulation of electron transport during electron-beam-induced deposition of nanostructures

    PubMed Central

    Jeschke, Harald O; Valentí, Roser

    2013-01-01

    Summary We present a numerical investigation of energy and charge distributions during electron-beam-induced growth of tungsten nanostructures on SiO2 substrates by using a Monte Carlo simulation of the electron transport. This study gives a quantitative insight into the deposition of energy and charge in the substrate and in the already existing metallic nanostructures in the presence of the electron beam. We analyze electron trajectories, inelastic mean free paths, and the distribution of backscattered electrons in different compositions and at different depths of the deposit. We find that, while in the early stages of the nanostructure growth a significant fraction of electron trajectories still interacts with the substrate, when the nanostructure becomes thicker the transport takes place almost exclusively in the nanostructure. In particular, a larger deposit density leads to enhanced electron backscattering. This work shows how mesoscopic radiation-transport techniques can contribute to a model that addresses the multi-scale nature of the electron-beam-induced deposition (EBID) process. Furthermore, similar simulations can help to understand the role that is played by backscattered electrons and emitted secondary electrons in the change of structural properties of nanostructured materials during post-growth electron-beam treatments. PMID:24367747

  13. Electron-beam-deposited distributed polarization rotator for high-power laser applications.

    PubMed

    Oliver, J B; Kessler, T J; Smith, C; Taylor, B; Gruschow, V; Hettrick, J; Charles, B

    2014-10-06

    Electron-beam deposition of silica and alumina is used to fabricate distributed polarization rotators suitable for smoothing the intensity of large-aperture, high-peak-power lasers. Low-modulation, low-loss transmittance with a high 351-nm laser-damage threshold is achieved.

  14. A comparison of neon versus helium ion beam induced deposition via Monte Carlo simulations.

    PubMed

    Timilsina, Rajendra; Smith, Daryl A; Rack, Philip D

    2013-03-22

    The ion beam induced nanoscale synthesis of PtCx (where x ∼ 5) using the trimethyl (methylcyclopentadienyl)platinum(IV) (MeCpPt(IV)Me3) precursor is investigated by performing Monte Carlo simulations of helium and neon ions. The helium beam leads to more lateral growth relative to the neon beam because of its larger interaction volume. The lateral growth of the nanopillars is dominated by molecules deposited via secondary electrons in both the simulations. Notably, the helium pillars are dominated by SE-I electrons whereas the neon pillars are dominated by SE-II electrons. Using a low precursor residence time of 70 μs, resulting in an equilibrium coverage of ∼4%, the neon simulation has a lower deposition efficiency (3.5%) compared to that of the helium simulation (6.5%). At larger residence time (10 ms) and consequently larger equilibrium coverage (85%) the deposition efficiencies of helium and neon increased to 49% and 21%, respectively; which is dominated by increased lateral growth rates leading to broader pillars. The nanoscale growth is further studied by varying the ion beam diameter at 10 ms precursor residence time. The study shows that total SE yield decreases with increasing beam diameters for both the ion types. However, helium has the larger SE yield as compared to that of neon in both the low and high precursor residence time, and thus pillars are wider in all the simulations studied.

  15. Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics

    SciTech Connect

    Chu, L. K.; Merckling, C.; Dekoster, J.; Caymax, M.; Alian, A.; Heyns, M.; Kwo, J.; Hong, M.

    2011-07-25

    We investigated the passivation of In{sub 0.53}Ga{sub 0.47}As (001) surface by molecular beam epitaxy techniques. After growth of strained In{sub 0.53}Ga{sub 0.47}As on InP (001) substrate, HfO{sub 2}/Al{sub 2}O{sub 3} high-{kappa} oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (D{sub it}) of the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface have been revealed by conductance measurement, indicating a downward D{sub it} profile from the energy close to the valence band (medium 10{sup 12} cm{sup -2}eV{sup -1}) towards that close to the conduction band (10{sup 11} cm{sup -2}eV{sup -1}). The low D{sub it}'s are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO{sub 2} has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO{sub 2} thickness (dielectric constant of HfO{sub 2}{approx}20) and the remained low D{sub it}'s due to the thin Al{sub 2}O{sub 3} passivation layer. The sample with HfO{sub 2} (3.4 nm)/Al{sub 2}O{sub 3} (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of {approx}0.93 nm.

  16. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    SciTech Connect

    Lee, J. H.; Tung, I. C.; Chang, S. -H.; Bhattacharya, A.; Fong, D. D.; Freeland, J. W.; Hong, Hawoong

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  17. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    SciTech Connect

    Lee, J. H.; Freeland, J. W.; Hong, Hawoong; Tung, I. C.; Chang, S.-H.; Bhattacharya, A.; Fong, D. D.

    2016-01-15

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  18. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy.

    PubMed

    Lee, J H; Tung, I C; Chang, S-H; Bhattacharya, A; Fong, D D; Freeland, J W; Hong, Hawoong

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  19. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    DOE PAGES

    Lee, J. H.; Tung, I. C.; Chang, S. -H.; ...

    2016-01-05

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-raymore » and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Finally, additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.« less

  20. Molecular layer deposition of alucone films using trimethylaluminum and hydroquinone

    SciTech Connect

    Choudhury, Devika; Sarkar, Shaibal K.; Mahuli, Neha

    2015-01-01

    A hybrid organic–inorganic polymer film grown by molecular layer deposition (MLD) is demonstrated here. Sequential exposures of trimethylaluminum [Al(CH{sub 3}){sub 3}] and hydroquinone [C{sub 6}H{sub 4}(OH){sub 2}] are used to deposit the polymeric films, which is a representative of a class of aluminum oxide polymers known as “alucones.” In-situ quartz crystal microbalance (QCM) studies are employed to determine the growth characteristics. An average growth rate of 4.1 Å per cycle at 150 °C is obtained by QCM and subsequently verified with x-ray reflectivity measurements. Surface chemistry during each MLD-half cycle is studied in depth by in-situ Fourier transform infrared (FTIR) vibration spectroscopy. Self limiting nature of the reaction is confirmed from both QCM and FTIR measurements. The conformal nature of the deposit, typical for atomic layer deposition and MLD, is verified with transmission electron microscopy imaging. Secondary ion mass spectroscopy measurements confirm the uniform elemental distribution along the depth of the films.

  1. Texture-Induced Anisotropy in an Inconel 718 Alloy Deposited Using Electron Beam Freeform Fabrication

    NASA Technical Reports Server (NTRS)

    Tayon, W.; Shenoy, R.; Bird, R.; Hafley, R.; Redding, M.

    2014-01-01

    A test block of Inconel (IN) 718 was fabricated using electron beam freeform fabrication (EBF(sup 3)) to examine how the EBF(sup 3) deposition process affects the microstructure, crystallographic texture, and mechanical properties of IN 718. Tests revealed significant anisotropy in the elastic modulus for the as-deposited IN 718. Subsequent tests were conducted on specimens subjected to a heat treatment designed to decrease the level of anisotropy. Electron backscatter diffraction (EBSD) was used to characterize crystallographic texture in the as-deposited and heat treated conditions. The anisotropy in the as-deposited condition was strongly affected by texture as evidenced by its dependence on orientation relative to the deposition direction. Heat treatment resulted in a significant improvement in modulus of the EBF(sup 3) product to a level nearly equivalent to that for wrought IN 718 with reduced anisotropy; reduction in texture through recrystallization; and production of a more homogeneous microstructure.

  2. Titanium-dioxide film formation using gas cluster ion beam assisted deposition technique

    NASA Astrophysics Data System (ADS)

    Nakatsu, O.; Matsuo, J.; Omoto, K.; Seki, T.; Takaoka, G.; Yamada, I.

    2003-05-01

    Gas cluster ion beam (GCIB) assisted deposition technique has been applied to form titanium-dioxide films. When oxygen cluster ions collide on solid surfaces, oxygen molecules in the clusters enhance oxidation due to high density energy deposition. Metal titanium pellets were used as source material for EB evaporation, because evaporation with metal pellets is much stable than that of oxide pellets. Films were deposited on sapphire (0 0 0 1) substrates with various conditions. Characteristics of the films were examined by use of XRD, RBS and AFM. When film was deposited with the acceleration voltage of 7 kV at 473 K, the well c-oriented rutile TiO 2 film was formed with average roughness of 0.4 nm. Without assistance of GCIB rough amorphous film was formed in an atmosphere of oxygen. Very smooth surface films with good crystallinity were formed by GCIB assisted deposition technique.

  3. Thermal imaging for assessment of electron-beam freeform fabrication (EBF3) additive manufacturing deposits

    NASA Astrophysics Data System (ADS)

    Zalameda, Joseph N.; Burke, Eric R.; Hafley, Robert A.; Taminger, Karen M.; Domack, Christopher S.; Brewer, Amy; Martin, Richard E.

    2013-05-01

    Additive manufacturing is a rapidly growing field where 3-dimensional parts can be produced layer by layer. NASA's electron beam freeform fabrication (EBF3) technology is being evaluated to manufacture metallic parts in a space environment. The benefits of EBF3 technology are weight savings to support space missions, rapid prototyping in a zero gravity environment, and improved vehicle readiness. The EBF3 system is composed of 3 main components: electron beam gun, multi-axis position system, and metallic wire feeder. The electron beam is used to melt the wire and the multi-axis positioning system is used to build the part layer by layer. To insure a quality deposit, a near infrared (NIR) camera is used to image the melt pool and solidification areas. This paper describes the calibration and application of a NIR camera for temperature measurement. In addition, image processing techniques are presented for deposit assessment metrics.

  4. Experimental Demonstration of a Controllable Electrostatic Molecular Beam Splitter

    SciTech Connect

    Deng Lianzhong; Liang Yan; Gu Zhenxing; Hou Shunyong; Li Shengqiang; Xia Yong; Yin Jianping

    2011-04-08

    We experimentally demonstrate a controllable electrostatic beam splitter for guided ND{sub 3} molecules with a single Y-shaped charged wire and a homogeneous bias field generated by a charged metallic parallel-plate capacitor. We study the dependences of the splitting ratio R of the guided ND{sub 3} beam and its relative guiding efficiency {eta} on the voltage difference between two output arms of the splitter. The influences of the molecular velocity v and the cutting position L on the splitting ratio R are investigated as well, and the guiding and splitting dynamic processes of cold molecules are simulated. Our study shows that the splitting ratio R of our splitter can be conveniently adjusted from 10% to 90% by changing {Delta}U from -6 kV to +6 kV, and the simulated results are consistent with our experimental ones.

  5. Tribological properties of boron nitride synthesized by ion beam deposition

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.; Spalvins, T.

    1985-01-01

    The adhesion and friction behavior of boron nitride films on 440 C bearing stainless steel substrates was examined. The thin films containing the boron nitride were synthesized using an ion beam extracted from a borazine plasma. Sliding friction experiments were conducted with BN in sliding contact with itself and various transition metals. It is indicated that the surfaces of atomically cleaned BN coating film contain a small amount of oxides and carbides, in addition to boron nitride. The coefficients of friction for the BN in contact with metals are related to the relative chemical activity of the metals. The more active the metal, the higher is the coefficient of friction. The adsorption of oxygen on clean metal and BN increases the shear strength of the metal - BN contact and increases the friction. The friction for BN-BN contact is a function of the shear strength of the elastic contacts. Clean BN surfaces exhibit relatively strong interfacial adhesion and high friction. The presence of adsorbates such as adventitious carbon contaminants on the BN surfaces reduces the shear strength of the contact area. In contrast, chemically adsorbed oxygen enhances the shear strength of the BN-BN contact and increases the friction.

  6. Metal delocalization and surface decoration in direct-write nanolithography by electron beam induced deposition

    NASA Astrophysics Data System (ADS)

    Gopal, Vidyut; Stach, Eric A.; Radmilovic, Velimir R.; Mowat, Ian A.

    2004-07-01

    The ability to interconnect different nanostructures is crucial to nanocircuit fabrication efforts. A simple and versatile direct-write nanolithography technique for the fabrication of interconnects is presented. Decomposition of a metalorganic precursor gas by a focused electron beam resulted in the deposition of conductive platinum nanowires. The combination of in situ secondary electron imaging with deposition allows for the simultaneous identification and interconnection of nanoscale components. However, the deposition was not entirely localized to the electron beam raster area, as shown by secondary ion mass spectrometry measurements. The electrical impact of the metallic spread was quantified by measuring the leakage current between closely spaced wires. The origins of the spread and strategies for minimizing it are discussed. These results indicate that, while this direct-write methodology is a convenient one for rapid prototyping of nanocircuits, caution must be used to avoid unwanted decoration of nanostructures by metallic species.

  7. Metal delocalization and surface decoration in direct-write nanolithography by electron beam induced deposition

    SciTech Connect

    Gopal, Vidyut; Stach, Eric A.; Radmilovic, Velimir R.; Mowat, Ian A.

    2004-07-05

    The ability to interconnect different nanostructures is crucial to nanocircuit fabrication efforts. A simple and versatile direct-write nanolithography technique for the fabrication of interconnects is presented. Decomposition of a metalorganic precursor gas by a focused electron beam resulted in the deposition of conductive platinum nanowires. The combination of in situ secondary electron imaging with deposition allows for the simultaneous identification and interconnection of nanoscale components. However, the deposition was not entirely localized to the electron beam raster area, as shown by secondary ion mass spectrometry measurements. The electrical impact of the metallic spread was quantified by measuring the leakage current between closely spaced wires. The origins of the spread and strategies for minimizing it are discussed. These results indicate that, while this direct-write methodology is a convenient one for rapid prototyping of nanocircuits, caution must be used to avoid unwanted decoration of nanostructures by metallic species.

  8. Molecular Beam Optical Stark Spectroscopy of Magnesium Deuteride

    NASA Astrophysics Data System (ADS)

    Steimle, Timothy; Zhang, Ruohan; Wang, Hailing

    2014-06-01

    Light polar, paramagnetic molecules, such as magnesium hydride, MgH, are attractive for slowing and trapping experiments because these molecules have both non-zero permanent electric dipole, μel, and magnetic dipole, μm moments. The permanent electric dipole moment is particularly relevant to Stark deceleration which depends on the ratio of the Stark shift to molecular mass. Here we report on the Stark effect in the (0,0) A2Π - X 2Σ+ band system of a cold molecular beam sample of magnesium deuteride, MgD. The lines associated with the lowest rotational levels are detected for the first time. The field-free spectrum was analyzed to produce an improved set of fine structure parameters for the A2Π(v = 0) state. The observed electric field induced splittings and shifts were analyzed to produce permanent electric dipole moments, μel,of 2.561(10)D and 1.34(8)D for A2Π(v = 0) and X2Σ+(v=0)states, respectively. This is the first molecular beam study of MgD.

  9. Controls of crystallinity and surface roughness of Cu film in partially ionized beam deposition

    SciTech Connect

    Koh, S.K.; Kim, K.H.; Choi, W.K.; Jang, H.G.; Yoon, Y.S.; Han, S.; Jung, H.J.

    1996-12-31

    Changes of crystallinity and surface roughness are discussed in terms of the average energy per deposited atom in the partially ionized beam (PIB) deposition. The average energy per deposited atom can be controlled by adjusting the ionization potential, Vi and acceleration potential Va. The ion beam consists of a Cu ion beam and residual gas ion beam and residual gases as well as Cu particles that were ionized and accelerated to provide the film with energy required for film-growth. The relative contribution of residual gas ions and Cu ions to total average energy per deposited atom was varied with the ionization potential. At fixed ionization potentials of Vi = 400 V and Vi = 450 V, the average energy per deposited atom was varied in the range of 0 to 120 eV with acceleration potential Va, of 0 to 4 kV. The relative intensity ratio, I(111)/I(200), of the Cu films increased from 6 to 37 and the root mean square (R{sub ms}) surface roughness decreased with an increase in acceleration potential at Vi = 400 V. The relative intensity ratio, I(111)/I(200), of Cu films increased up to Va = 2 kV at Vi = 2 kV, above which a decrease occurred, and the surface roughness of Cu films increased as a function of acceleration potential. The degree of preferred orientation was closely related with the average energy per deposited atom. The change of R{sub ms} roughness might be affected by ion flux, particle energy and preferred orientation.

  10. Domain metastability: a molecular basis for immunoglobulin deposition?

    PubMed

    Sonnen, Andreas F-P; Yu, Chao; Evans, Edward J; Stuart, David I; Davis, Simon J; Gilbert, Robert J C

    2010-06-04

    We present the crystal structure of an immunoglobulin light-chain-like domain, CTLA-4, as a strand-swapped dimer displaying cis-trans proline isomerisation and native-like hydrogen bonding. We also show that CTLA-4 can form amyloid-like fibres and amorphous deposits explainable by the same strand swapping. Our results suggest a molecular basis for the pathological aggregation of immunoglobulin domains and why amyloid-like fibres are more often composed of homologous rather than heterologous subunits. Copyright (c) 2010 Elsevier Ltd. All rights reserved.

  11. Note: A helical velocity selector for continuous molecular beams

    NASA Astrophysics Data System (ADS)

    Szewc, Carola; Collier, James D.; Ulbricht, Hendrik

    2010-10-01

    We report on a modern realization of the classic helical velocity selector for gas phase particle beams. The device operates stably under high vacuum conditions at rotational frequencies limited only by commercial dc motor capabilities. Tuning the rotational frequency allows selective scanning over a broad velocity band. The width of the selected velocity distributions at full-width-half-maximum is as narrow as a few percent of the selected mean velocity and independent of the rotational speed of the selector. The selector generates low vibrational noise amplitudes comparable to mechanically damped state-of-the-art turbo-molecular pumps and is therefore compatible with vibration sensitive experiments like molecule interferometry.

  12. Molecular-Beam Epitaxy Of IrSi3

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon

    1991-01-01

    Molecular-beam epitaxy grows layers of iridium silicide (IrSi3) on silicon at temperatures of 630 to 800 degrees C. Particularly useful as photodetector material because it forms Schottky diodes having potential barriers of only 0.12 to 0.15 eV - lowest of any metal on silicon. Photodiodes sensitive to infrared radiation at wavelengths as large as 8 to 10 micrometers. New, lower formation temperature expected to enable growth of arrays of IrSi3/Si infrared detectors on Si wafers without thermally damaging image-processing circuitry integrated on wafers.

  13. Note: A helical velocity selector for continuous molecular beams.

    PubMed

    Szewc, Carola; Collier, James D; Ulbricht, Hendrik

    2010-10-01

    We report on a modern realization of the classic helical velocity selector for gas phase particle beams. The device operates stably under high vacuum conditions at rotational frequencies limited only by commercial dc motor capabilities. Tuning the rotational frequency allows selective scanning over a broad velocity band. The width of the selected velocity distributions at full-width-half-maximum is as narrow as a few percent of the selected mean velocity and independent of the rotational speed of the selector. The selector generates low vibrational noise amplitudes comparable to mechanically damped state-of-the-art turbo-molecular pumps and is therefore compatible with vibration sensitive experiments like molecule interferometry.

  14. Note: A helical velocity selector for continuous molecular beams

    SciTech Connect

    Szewc, Carola; Collier, James D.; Ulbricht, Hendrik

    2010-10-15

    We report on a modern realization of the classic helical velocity selector for gas phase particle beams. The device operates stably under high vacuum conditions at rotational frequencies limited only by commercial dc motor capabilities. Tuning the rotational frequency allows selective scanning over a broad velocity band. The width of the selected velocity distributions at full-width-half-maximum is as narrow as a few percent of the selected mean velocity and independent of the rotational speed of the selector. The selector generates low vibrational noise amplitudes comparable to mechanically damped state-of-the-art turbo-molecular pumps and is therefore compatible with vibration sensitive experiments like molecule interferometry.

  15. Chemical reactions on solid surfaces using molecular beam techniques

    NASA Astrophysics Data System (ADS)

    Palmer, R. L.

    1980-07-01

    Thermal energy molecular beams have been used to study chemical interactions with metal surfaces. Chemisorption of simple molecules such as H2, O2, CH4, C2Hx and CO was investigated on single and polycrystalline surfaces of Pt, Ni, Co, and Ag. Kinetic parameters and reaction mechanisms were determined for model catalytic reactions including CO and C2Hx oxidation and methanation from H2/CO mixtures. Chemical reactions of NOx with CO and D2 on Pt(111) and other surfaces have been surveyed and the kinetics of NO and O2 chemisorption have been measured. The theory of adsorption/desorption kinetics is reviewed and certain deficiencies identified.

  16. Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition

    SciTech Connect

    Huang, Jie; Lucero, Antonio T.; Cheng, Lanxia; Kim, Jiyoung; Hwang, Hyeon Jun; Ha, Min-Woo

    2015-03-23

    In this study, we have deposited organic-inorganic hybrid semiconducting hydroquinone (HQ)/zinc oxide (ZnO) superlattices using molecular-atomic layer deposition, which enables accurate control of film thickness, excellent uniformity, and sharp interfaces at a low deposition temperature (150 °C). Self-limiting growth of organic layers is observed for the HQ precursor on ZnO surface. Nano-laminates were prepared by varying the number of HQ to ZnO cycles in order to investigate the physical and electrical effects of different HQ to ZnO ratios. It is indicated that the addition of HQ layer results in enhanced mobility and reduced carrier concentration. The highest Hall mobility of approximately 2.3 cm{sup 2}/V·s and the lowest n-type carrier concentration of approximately 1.0 × 10{sup 18}/cm{sup 3} were achieved with the organic-inorganic superlattice deposited with a ratio of 10 ZnO cycles to 1 HQ cycle. This study offers an approach to tune the electrical transport characteristics of ALD ZnO matrix thin films using an organic dopant. Moreover, with organic embedment, this nano-laminate material may be useful for flexible electronics.

  17. Hyperthermal molecular beam source using a non-diaphragm-type small shock tube

    NASA Astrophysics Data System (ADS)

    Yoshimoto, Yuta; Osuka, Kenichi; Miyoshi, Nobuya; Kinefuchi, Ikuya; Takagi, Shu; Matsumoto, Yoichiro

    2016-10-01

    We have developed a hyperthermal molecular beam source employing a non-diaphragm-type small shock tube for gas-surface interaction studies. Unlike conventional shock-heated beam sources, the capability of repetitive beam generation without the need for replacing a diaphragm makes our beam source suitable for scattering experiments, which require signal accumulation for a large number of beam pulses. The short duration of shock heating alleviates the usual temperature limit due to the nozzle material, enabling the generation of a molecular beam with higher translational energy or that containing dissociated species. The shock-heated beam is substantially free from surface-contaminating impurities that are pronounced in arc-heated beams. We characterize the properties of nitrogen and oxygen molecular beams using the time-of-flight method. When both the timing of beam extraction and the supply quantity of nitrogen gas are appropriately regulated, our beam source can generate a nitrogen molecular beam with translational energy of approximately 1 eV, which corresponds to the typical activation energy of surface reactions. Furthermore, our beam source can generate an oxygen molecular beam containing dissociated oxygen atoms, which can be a useful probe for surface oxidation. The dissociation fraction along with the translational energy can be adjusted through the supply quantity of oxygen gas.

  18. Hyperthermal molecular beam source using a non-diaphragm-type small shock tube.

    PubMed

    Yoshimoto, Yuta; Osuka, Kenichi; Miyoshi, Nobuya; Kinefuchi, Ikuya; Takagi, Shu; Matsumoto, Yoichiro

    2016-10-01

    We have developed a hyperthermal molecular beam source employing a non-diaphragm-type small shock tube for gas-surface interaction studies. Unlike conventional shock-heated beam sources, the capability of repetitive beam generation without the need for replacing a diaphragm makes our beam source suitable for scattering experiments, which require signal accumulation for a large number of beam pulses. The short duration of shock heating alleviates the usual temperature limit due to the nozzle material, enabling the generation of a molecular beam with higher translational energy or that containing dissociated species. The shock-heated beam is substantially free from surface-contaminating impurities that are pronounced in arc-heated beams. We characterize the properties of nitrogen and oxygen molecular beams using the time-of-flight method. When both the timing of beam extraction and the supply quantity of nitrogen gas are appropriately regulated, our beam source can generate a nitrogen molecular beam with translational energy of approximately 1 eV, which corresponds to the typical activation energy of surface reactions. Furthermore, our beam source can generate an oxygen molecular beam containing dissociated oxygen atoms, which can be a useful probe for surface oxidation. The dissociation fraction along with the translational energy can be adjusted through the supply quantity of oxygen gas.

  19. Molecular beam mass spectrometry applied to biomass gasification monitoring

    SciTech Connect

    Gebhard, S.C.; Gratson, D.A.; French, R.J.

    1995-03-01

    The NREL transportable molecular beam mass spectrometer (TMBMS) was successfully used to monitor the composition of unprocessed and catalytically conditioned synthesis gas produced during hog fuel gasification with the Battelle Columbus Laboratory 9 tonne/day indirectly heated biomass gasifier. Variations in biomass feed rate were observed with simultaneous qualitative chemical analysis of the entire gasification product slate. A large number of tar compounds were observed in the unprocessed syngas in addition to the known low molecular weight permanent gases. Tar compounds include a variety of oxygenated and substituted aromatic hydrocarbons, and condensed ring aromatic hydrocarbons. Catalytic conditioning with DN34 effectively destroyed the more reactive oxygenates and stripped off alkyl groups from aromatic rings, but some benzene. naphthalene, phenanthrene/anthracene and pyrene (plus other aromatic hydrocarbons) remained. The concentration of these compounds was estimated to be in the few hundred ppmv range.

  20. The effect of energy deposition on pattern resolution in electron beam lithography

    NASA Astrophysics Data System (ADS)

    Raghunathan, Ananthan

    Electron beam lithography is one of the most important tools for nanofabrication. Electron beam lithography has consistently been able to offer higher resolution, typically better than 10 nm or so, compared to other techniques. In this work the contribution of electron-substrate interaction to pattern resolution is investigated. In electron beam lithography the incident beam is scattered in the resist-substrate stack by a combination of elastic and inelastic events which is described by the point spread function. Using a Vistec VB300 Gaussian beam lithography tool operating at 100 keV the experimental point spread function is investigated by a technique called point exposure distribution measurements. The experimental results indicate that the scattering in the sub-100 nm range shows several orders of the magnitude difference with that obtained via Monte Carlo simulations. In high energy electron beam lithography where forward scattering in small, contribution of secondary electrons generated by the primary beam must be taken into account. The chemical change leading to resist exposure is through bond scission, which is typically a low energy event between 3 -- 5 eV. Compared to the primary beam, the secondary electrons have a significantly higher probability of scission due to their lower energy. These secondary electrons are also generated with large emission angles and can travel several nanometers, leading to an increase in observed line widths compared to the size of the beam. An analytical model developed here, that considers the energy deposited by the secondary electrons, is able to predict the dependence of dose on observed diameter to within a reasonable accuracy. This technique used in conjunction with the knowledge of resist contrast is also indicative of pattern resolution limits in high energy electron beam lithography. It is also found that for negative resists, backscatter effects and resist contrast significantly degrade the resolution for large

  1. The electron beam deposition of titanium on polyetheretherketone (PEEK) and the resulting enhanced biological properties.

    PubMed

    Han, Cheol-Min; Lee, Eun-Jung; Kim, Hyoun-Ee; Koh, Young-Hag; Kim, Keung N; Ha, Yoon; Kuh, Sung-Uk

    2010-05-01

    The surface of polyetheretherketone (PEEK) was coated with a pure titanium (Ti) layer using an electron beam (e-beam) deposition method in order to enhance its biocompatibility and adhesion to bone tissue. The e-beam deposition method was a low-temperature coating process that formed a dense, uniform and well crystallized Ti layer without deteriorating the characteristics of the PEEK implant. The Ti coating layer strongly adhered to the substrate and remarkably enhanced its wettability. The Ti-coated samples were evaluated in terms of their in vitro cellular behaviors and in vivo osteointegration, and the results were compared to a pure PEEK substrate. The level of proliferation of the cells (MC3T3-E1) was measured using a methoxyphenyl tetrazolium salt (MTS) assay and more than doubled after the Ti coating. The differentiation level of cells was measured using the alkaline phosphatase (ALP) assay and also doubled. Furthermore, the in vivo animal tests showed that the Ti-coated PEEK implants had a much higher bone-in-contact (BIC) ratio than the pure PEEK implants. These in vitro and in vivo results suggested that the e-beam deposited Ti coating significantly improved the potential of PEEK for hard tissue applications. Copyright 2009 Elsevier Ltd. All rights reserved.

  2. Femtosecond laser-induced damage threshold of electron beam deposited dielectrics for 1-m class optics

    NASA Astrophysics Data System (ADS)

    Hervy, Adrien; Gallais, Laurent; Chériaux, Gilles; Mouricaud, Daniel

    2017-01-01

    In order to transport multi-petawatt (PW) femtosecond laser beams with large spectral bandwidth, specific mirrors have to be designed and manufactured. We report on an experimental study of the laser-damage resistance and other optical properties of coating materials deposited in a 1-m class coating chamber. The study is conducted on single-layer coatings deposited by electron beam evaporation at 500 fs. Based on the experience of large optics for nanosecond applications, hafnia and silica are particularly investigated. However, in the case of sub-15 fs, the spectral specifications for PW beam transport mirrors cannot be reached by classical high laser-resistant quarter-wave SiO2/HfO2 stacks. Therefore, we investigate the laser resistance of different dielectrics of interest deposited with electron-beam processes: Al2O3, Y2O3, Sc2O3, HfO2, Ta2O5, TiO2. The influence of multiple pulse irradiations and environmental conditions, such as vacuum and temperature, is studied. With the investigation of multilayer stacks, we also show that there is no difference in behavior when a film is studied as a single layer or embedded in a stack. Based on these results, we were able to optimize high reflective (>99.5%), broadband (300 nm) and high laser-induced damage threshold (2.5 J/cm2) mirrors for PW applications.

  3. Enhanced imaging of biomolecules with electron beam deposited tips for scanning force microscopy

    NASA Astrophysics Data System (ADS)

    Zenhausern, F.; Adrian, M.; ten Heggeler-Bordier, B.; Ardizzoni, F.; Descouts, P.

    1993-06-01

    Tip/sample interaction on the scanning force microscope (SFM) is a particularly difficult problem with biological materials. One major factor affecting image quality is the tip shape. Improved electron beam induced deposition technique with a scanning electron microscope (SEM) was used for the reproducible fabrication of carbon sharp tips on the end of commercially available silicon nitride cantilevers for scanning force microscopy. By aligning a fine focused beam of 20 nm diameter directly down the axis of the pyramidal tip at electron energy of 20 kV, carbon deposits grow with full cone angle of about 25°, cone length of 2 μm, and radii of curvature down to 10 nm, making these e-beam tips suitable for biomolecules imaging. The tip dimensions also were controlled by adjusting the beam parameters. Three different types of SFM tips were used to image tobacco mosaic virus (TMV). Conventional pyramidal tips appeared generally worse for imaging helical particles of TMV than SEM-deposited tips which were found more robust than commercially available conical tips. The use of sharper tips for SFM imaging of protein DNA revealed a 25% improvement in lateral resolution.

  4. Annealing-Based Electrical Tuning of Cobalt-Carbon Deposits Grown by Focused-Electron-Beam-Induced Deposition.

    PubMed

    Puydinger Dos Santos, Marcos V; Velo, Murilo F; Domingos, Renan D; Zhang, Yucheng; Maeder, Xavier; Guerra-Nuñez, Carlos; Best, James P; Béron, Fanny; Pirota, Kleber R; Moshkalev, Stanislav; Diniz, José A; Utke, Ivo

    2016-11-30

    An effective postgrowth electrical tuning, via an oxygen releasing method, to enhance the content of non-noble metals in deposits directly written with gas-assisted focused-electron-beam-induced deposition (FEBID) is presented. It represents a novel and reproducible method for improving the electrical transport properties of Co-C deposits. The metal content and electrical properties of Co-C-O nanodeposits obtained by electron-induced dissociation of volatile Co2(CO)8 precursor adsorbate molecules were reproducibly tuned by applying postgrowth annealing processes at 100 °C, 200 °C, and 300 °C under high-vacuum for 10 min. Advanced thin film EDX analysis showed that during the annealing process predominantly oxygen is released from the Co-C-O deposits, yielding an atomic ratio of Co:C:O = 100:16:1 (85:14:1) with respect to the atomic composition of as-written Co:C:O = 100:21:28 (67:14:19). In-depth Raman analysis suggests that the amorphous carbon contained in the as-written deposit turns into graphite nanocrystals with size of about 22.4 nm with annealing temperature. Remarkably, these microstructural changes allow for tuning of the electrical resistivity of the deposits over 3 orders of magnitude from 26 mΩ cm down to 26 μΩ cm, achieving a residual resistivity of ρ2K/ρ300 K = 0.56, close to the value of 0.53 for pure Co films with similar dimensions, making it especially interesting and advantageous over the numerous works already published for applications such as advanced scanning-probe systems, magnetic memory, storage, and ferroelectric tunnel junction memristors, as the graphitic matrix protects the cobalt from being oxidized under an ambient atmosphere.

  5. Selective atomic layer deposition with electron-beam patterned self-assembled monolayers

    SciTech Connect

    Huang, Jie; Lee, Mingun; Kim, Jiyoung

    2012-01-15

    The authors selectively deposited nanolines of titanium oxide (TiO{sub 2}) through atomic layer deposition (ALD) using an octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM) as a nucleation inhibition layer. Electron-beam (e-beam) patterning is used to prepare nanoline patterns in the OTS SAM on SiO{sub 2}/Si substrates suitable for selective ALD. The authors have investigated the effect of an e-beam dose on the pattern width of the selectively deposited TiO{sub 2} lines. A high dose (e.g., 20 nC/cm) causes broadening of the linewidth possibly due to scattering, while a low dose (e.g., 5 nC/cm) results in a low TiO{sub 2} deposition rate because of incomplete exposure of the OTS SAMs. The authors have confirmed that sub-30 nm isolated TiO{sub 2} lines can be achieved by selective ALD combined with OTS patterned by EBL at an accelerating voltage of 2 kV and line dose of 10 nC/cm. This research offers a new approach for patterned gate dielectric layer fabrication, as well as potential applications for nanosensors and solar cells.

  6. Supercritical fluid molecular spray film deposition and powder formation

    DOEpatents

    Smith, Richard D.

    1986-01-01

    Solid films are deposited, or fine powders formed, by dissolving a solid material into a supercritical fluid solution at an elevated pressure and then rapidly expanding the solution through a short orifice into a region of relatively low pressure. This produces a molecular spray which is directed against a substrate to deposit a solid thin film thereon, or discharged into a collection chamber to collect a fine powder. Upon expansion and supersonic interaction with background gases in the low pressure region, any clusters of solvent are broken up and the solvent is vaporized and pumped away. Solute concentration in the solution is varied primarily by varying solution pressure to determine, together with flow rate, the rate of deposition and to control in part whether a film or powder is produced and the granularity of each. Solvent clustering and solute nucleation are controlled by manipulating the rate of expansion of the solution and the pressure of the lower pressure region. Solution and low pressure region temperatures are also controlled.

  7. Palladium thin film deposition from liquid precursors on polymers by projected excimer beams

    NASA Astrophysics Data System (ADS)

    Kordás, K.; Nánai, L.; Bali, K.; Stépán, K.; Vajtai, R.; George, T. F.; Leppävuori, S.

    2000-12-01

    Palladium thin films are deposited on polyimide (PI) and mylar (PET) surfaces from a solution by employing XeCl and KrF excimer lasers. The substrates are plunged in a [Pd(NH3)4]2+/HCOH system, and an illuminated diaphragm is projected onto the polymers through the precursor layer. Due to the incident laser beam, chemical reactions take place at the solution/polymer interface, yielding thin Pd films on the surface. The formation and thickness of the Pd layer depend on the numbers of pulses, laser fluence and wavelength of the laser. The formed metallic, adhesive, and homogeneous Pd deposits are found to be suitable for further electroless copper deposition. Techniques such as DEKTAK profilometry, optical microscopy, FESEM (equipped with EDX) and XRD are involved in the determination of morphological, structural and compositional characteristics of the deposited layers.

  8. A molecular beam/quadrupole mass spectrometer system with synchronized beam modulation and digital waveform analysis

    NASA Technical Reports Server (NTRS)

    Pellett, G. L.; Adams, B. R.

    1983-01-01

    A performance evaluation is conducted for a molecular beam/mass spectrometer (MB/MS) system, as applied to a 1-30 torr microwave-discharge flow reactor (MWFR) used in the formation of the methylperoxy radical and a study of its subsequent destruction in the presence or absence of NO(x). The modulated MB/MS system is four-staged and differentially pumped. The results obtained by the MWFR study is illustrative of overall system performance, including digital waveform analysis; significant improvements over previous designs are noted in attainable S/N ratio, detection limit, and accuracy.

  9. Area selective molecular layer deposition of polyurea films.

    PubMed

    Prasittichai, Chaiya; Zhou, Han; Bent, Stacey F

    2013-12-26

    Patterned organic thin films with submicrometer features are of great importance in applications such as nanoelectronics and optoelectronics. We present here a new approach for creating patterned organic films using area selective molecular layer deposition (MLD). MLD is a technique that allows for conformal deposition of nanoscale organic thin films with exceptional control over vertical thickness and composition. By expanding the technique to allow for area selective MLD, lateral patterning of the film can be achieved. In this work, polyurea thin films were deposited by alternating pulses of 1,4-phenylenediisocyanate (PDIC) and ethylenediamine (ED) in a layer-by-layer fashion with a linear growth rate of 5.3 Å/cycle. Studies were carried out to determine whether self-assembled monolayer (SAM) formed from octadecyltrichlorosilane (ODTS) could block MLD on silicon substrates. Results show that the MLD process is impeded by the SAM. To test lateral patterning in MLD, SAMs were patterned onto silicon substrates using two different approaches. In one approach, SiO2-coated Si(100) substrates were patterned with an ODTS SAM by soft lithography in a well-controlled environment. In the second approach, patterned ODTS SAM was formed on H-Si/SiO2 patterned wafers by employing the chemically selective adsorption of ODTS on SiO2 over H-Si. Auger electron spectroscopy results revealed that the polyurea film is deposited predominantly on the ODTS-free regions of both patterned substrates, indicating sufficient blocking of MLD by the ODTS SAM layer to replicate the pattern. The method we describe here offers a novel approach for fabricating high quality, three-dimensional organic structures.

  10. Physical properties of nitrogenated amorphous carbon films produced by ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Rossi, Francois; Andre, Bernard; Veen, A. Van; Mijnarends, P. E.; Schut, H.; Labohm, F.; Delplancke, Marie Paule; Dunlop, Hugh; Anger, Eric

    1994-12-01

    Carbon films with up to 32 at.% N (a-C:N) have been prepared using an ion-beam-assisted magnetron, with an N2(+) beam at energies between 50 and 300 eV. The composition and density of the films vary strongly with the deposition parameters. Electron energy loss spectroscopy shows that these a-C:N films are mostly graphitic with up to 20% C Sp3 bonding. Rutherford backscattering spectroscopy and neutron depth profiling show that the density goes through a maximum as the average deposited energy per unit depth increases. X-ray photoelectron spectroscopy shows that nitrogen is mostly combined with carbon in triple (C(triple bond)N and double (C=N) bonds. Positron annihilation spectroscopy shows that the void concentration in the films goes through a minimum with deposited energy. These results are consistent with a densification induced by the collisions at low deposited energy, and damage-induced graphitization at high deposited energy values.

  11. Adherence of ion beam sputter deposited metal films on H-13 steel

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.

    1980-01-01

    An electron bombardment argon ion source was used to sputter deposit 17 different metal and metal oxide films ranging in thickness from 1 to 8 micrometers on H-13 steel substrates. The film adherence to the substrate surface was measured using a tensile test apparatus. Comparisons in bond strength were made between ion beam, ion plating, and RF deposited films. A protective coating to prevent heat checking in H-13 steel dies used for aluminum die casting was studied. The results of exposing the coated substrates to temperatures up to 700 degrees are presented.

  12. Growth of cluster assembled ZnO film by nanocluster beam deposition technique

    SciTech Connect

    Halder, Nilanjan

    2015-06-24

    ZnO is considered as one of the most promising material for optoelectronic devices. The present work emphasizes production of cluster assembled ZnO films by a UHV nanocluster beam deposition technique where the nanoclusters were produced in a laser vaporization cluster source. The microstructural and the optical properties of the ZnO nanocluster film deposited were investigated. As the wet chemical processes are not compatible with current solid state methods of device fabrication, therefore alternative UHV technique described in the paper is the need of the hour.

  13. Percolation of gallium dominates the electrical resistance of focused ion beam deposited metals

    SciTech Connect

    Faraby, H.; DiBattista, M.; Bandaru, P. R.

    2014-04-28

    Metal deposition through focused ion beam (FIB) based systems is thought to result in material composed of the primary metal from the metallo-organic precursor in addition to carbon, oxygen, and gallium. We determined, through electrical resistance and chemical composition measurements on a wide range of FIB deposited platinum and tungsten lines, that the gallium ion (Ga{sup +}) concentration in the metal lines plays the dominant role in controlling the electrical resistivity. Effective medium theory, based on McLachlan's formalisms, was used to describe the relationship between the Ga{sup +} concentration and the corresponding resistivity.

  14. Extended bulk defects induced by low-energy ions during partially ionized beam deposition

    SciTech Connect

    Lee, W.I.; Wong, J.; Borrego, J.M.; Lu, T.

    1988-08-15

    The study of possible defects generated by low-energy ions during partially ionized beam (PIB) depositions was performed. No defects were observed when acceleration voltage was set lower than 1 kV. Surprisingly, several deep levels were detected up to the depth of 4000 A in the 3-kV sample. However, these levels can be annealed out at a relatively low temperature of 400 /sup 0/C. It is concluded in this study that, by properly choosing the ion energy range, PIB deposition will not cause severe damage to the substrate and can be a viable technique for growing heterostructures.

  15. A novel electron beam evaporation technique for the deposition of superconducting thin films

    NASA Astrophysics Data System (ADS)

    Krishna, M. G.; Muralidhar, G. K.; Rao, K. N.; Rao, G. M.; Mohan, S.

    1991-05-01

    Superconducting thin films of BiSrCaCuO have been deposited using a novel electron beam evaporation technique. In this technique the crucible has a groove around its circumference and rotates continuously during deposition. The source material is loaded in the form of pellets of the composite. Both oxides as well as flourides have been used in the starting material and a comparison of the film properties has been made. The best film was obtained on a MgO(100) substrate with a Tc onset at 85 K and Tc zero at 77 K using calcium flouride in the source material.

  16. Oxide scale depth profiling of lanthanum-deposited AISI-304: An ion beam analysis

    NASA Astrophysics Data System (ADS)

    Ager, F. J.; Respaldiza, M. A.; Paúl, A.; Odriozola, J. A.; da Silva, M. F.; Soares, J. C.

    1998-03-01

    A detailed study of the composition and evolution with time of oxide scales formed onto lanthanum-coated AISI-304 stainless steel specimens by means of the PYROSOL deposition method at 1173 K in air, has been done with the help of ion beam analysis techniques such as Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA) of Cr and Mn. Complementary data have been obtained by means of other analytical techniques such as Scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and thermogravimetric measurements (TG), proving the effectiveness of the deposition method for enhancing the refractory behaviour.

  17. Room temperature operational single electron transistor fabricated by focused ion beam deposition

    NASA Astrophysics Data System (ADS)

    Karre, P. Santosh Kumar; Bergstrom, Paul L.; Mallick, Govind; Karna, Shashi P.

    2007-07-01

    We present the fabrication and room temperature operation of single electron transistors using 8nm tungsten islands deposited by focused ion beam deposition technique. The tunnel junctions are fabricated using oxidation of tungsten in peracetic acid. Clear Coulomb oscillations, showing charging and discharging of the nanoislands, are seen at room temperature. The device consists of an array of tunnel junctions; the tunnel resistance of individual tunnel junction of the device is calculated to be as high as 25.13GΩ. The effective capacitance of the array of tunnel junctions was found to be 0.499aF, giving a charging energy of 160.6meV.

  18. Highly conductive and pure gold nanostructures grown by electron beam induced deposition

    PubMed Central

    Shawrav, Mostafa M.; Taus, Philipp; Wanzenboeck, Heinz D.; Schinnerl, M.; Stöger-Pollach, M.; Schwarz, S.; Steiger-Thirsfeld, A.; Bertagnolli, Emmerich

    2016-01-01

    This work introduces an additive direct-write nanofabrication technique for producing extremely conductive gold nanostructures from a commercial metalorganic precursor. Gold content of 91 atomic % (at. %) was achieved by using water as an oxidative enhancer during direct-write deposition. A model was developed based on the deposition rate and the chemical composition, and it explains the surface processes that lead to the increases in gold purity and deposition yield. Co-injection of an oxidative enhancer enabled Focused Electron Beam Induced Deposition (FEBID)—a maskless, resistless deposition method for three dimensional (3D) nanostructures—to directly yield pure gold in a single process step, without post-deposition purification. Gold nanowires displayed resistivity down to 8.8 μΩ cm. This is the highest conductivity achieved so far from FEBID and it opens the possibility of applications in nanoelectronics, such as direct-write contacts to nanomaterials. The increased gold deposition yield and the ultralow carbon level will facilitate future applications such as the fabrication of 3D nanostructures in nanoplasmonics and biomolecule immobilization. PMID:27666531

  19. Thermally induced transformations of amorphous carbon nanostructures fabricated by electron beam induced deposition.

    PubMed

    Kulkarni, Dhaval D; Rykaczewski, Konrad; Singamaneni, Srikanth; Kim, Songkil; Fedorov, Andrei G; Tsukruk, Vladimir V

    2011-03-01

    We studied the thermally induced phase transformations of electron-beam-induced deposited (EBID) amorphous carbon nanostructures by correlating the changes in its morphology with internal microstructure by using combined atomic force microscopy (AFM) and high resolution confocal Raman microscopy. These carbon deposits can be used to create heterogeneous junctions in electronic devices commonly known as carbon-metal interconnects. We compared two basic shapes of EBID deposits: dots/pillars with widths from 50 to 600 nm and heights from 50 to 500 nm and lines with variable heights from 10 to 150 nm but having a constant length of 6 μm. We observed that during thermal annealing, the nanoscale amorphous deposits go through multistage transformation including dehydration and stress-relaxation around 150 °C, dehydrogenation within 150-300 °C, followed by graphitization (>350 °C) and formation of nanocrystalline, highly densified graphitic deposits around 450 °C. The later stage of transformation occurs well below commonly observed graphitization for bulk carbon (600-800 °C). It was observed that the shape of the deposits contribute significantly to the phase transformations. We suggested that this difference is controlled by different contributions from interfacial footprints area. Moreover, the rate of graphitization was different for deposits of different shapes with the lines showing a much stronger dependence of its structure on the density than the dots.

  20. Highly conductive and pure gold nanostructures grown by electron beam induced deposition

    NASA Astrophysics Data System (ADS)

    Shawrav, Mostafa M.; Taus, Philipp; Wanzenboeck, Heinz D.; Schinnerl, M.; Stöger-Pollach, M.; Schwarz, S.; Steiger-Thirsfeld, A.; Bertagnolli, Emmerich

    2016-09-01

    This work introduces an additive direct-write nanofabrication technique for producing extremely conductive gold nanostructures from a commercial metalorganic precursor. Gold content of 91 atomic % (at. %) was achieved by using water as an oxidative enhancer during direct-write deposition. A model was developed based on the deposition rate and the chemical composition, and it explains the surface processes that lead to the increases in gold purity and deposition yield. Co-injection of an oxidative enhancer enabled Focused Electron Beam Induced Deposition (FEBID)—a maskless, resistless deposition method for three dimensional (3D) nanostructures—to directly yield pure gold in a single process step, without post-deposition purification. Gold nanowires displayed resistivity down to 8.8 μΩ cm. This is the highest conductivity achieved so far from FEBID and it opens the possibility of applications in nanoelectronics, such as direct-write contacts to nanomaterials. The increased gold deposition yield and the ultralow carbon level will facilitate future applications such as the fabrication of 3D nanostructures in nanoplasmonics and biomolecule immobilization.

  1. An effusive molecular beam technique for studies of polyatomic gas-surface reactivity and energy transfer.

    PubMed

    Cushing, G W; Navin, J K; Valadez, L; Johánek, V; Harrison, I

    2011-04-01

    An effusive molecular beam technique is described to measure alkane dissociative sticking coefficients, S(T(g), T(s); ϑ), on metal surfaces for which the impinging gas temperature, T(g), and surface temperature, T(s), can be independently varied, along with the angle of incidence, ϑ, of the impinging gas. Effusive beam experiments with T(g) = T(s) = T allow for determination of angle-resolved dissociative sticking coefficients, S(T; ϑ), which when averaged over the cos (ϑ)/π angular distribution appropriate to the impinging flux from a thermal ambient gas yield the thermal dissociative sticking coefficient, S(T). Nonequilibrium S(T(g), T(s); ϑ) measurements for which T(g) ≠ T(s) provide additional opportunities to characterize the transition state and gas-surface energy transfer at reactive energies. A resistively heated effusive molecular beam doser controls the T(g) of the impinging gas striking the surface. The flux of molecules striking the surface from the effusive beam is determined from knowledge of the dosing geometry, chamber pressure, and pumping speed. Separate experiments with a calibrated leak serve to fix the chamber pumping speed. Postdosing Auger electron spectroscopy is used to measure the carbon of the alkyl radical reaction product that is deposited on the surface as a result of alkane dissociative sticking. As implemented in a typical ultrahigh vacuum chamber for surface analysis, the technique has provided access to a dynamic range of roughly 6 orders of magnitude in the initial dissociative sticking coefficient for small alkanes on Pt(111).

  2. Novel photoresist thin films with in-situ photoacid generator by molecular layer deposition

    NASA Astrophysics Data System (ADS)

    Zhou, Han; Bent, Stacey F.

    2013-03-01

    Current photoresist materials are facing many challenges introduced by advanced lithographies, particularly the need for excellent compositional homogeneity and ultrathin film thickness. Traditional spin-on polymeric resists have inherent limitations in achieving a high level of control over the chemical composition, leading to interest in development of alternative methods for making photoresists. In this work, we demonstrate that molecular layer deposition (MLD) is a potential method for synthesizing photoresists because it allows for precise control over organic film thickness and composition. MLD utilizes sequential, self-limiting reactions of organic precursors to build a thin film directly on a substrate surface and grows organic films by depositing only one molecular layer at each precursor dose, which in turn allows for fine-tuning of the position and concentration of various functionalities in the deposited film. In this study, we use bifunctional precursors, diamine and diisocyanate, to build polyurea resist films via urea coupling reaction between the amine and isocyanate groups. Acid-labile groups and photoacid generators (PAGs) are embedded in the backbone of the resist films with a highly uniform distribution. The resist films were successfully deposited and characterized for both materials properties and resist response. E-beam patterning was achieved with the resist films. Cross-linking behavior of the resist films was observed, likely due to the aromatic rings in the films, which is undesirable for application as a positive-tone photoresist. Moreover, the in-situ polymer-bound PAGs had low sensitivity. It is suggested that this effect may arise because the PAG is cation-bound, leading to lower efficiency of sulfur-carbon bond cleavage in the sulfonium cation, which is needed to produce the photoacid, and consequently a lower photoacid yield. Further work is needed to improve the performance of the MLD resist films.

  3. Ion-beam inertial fusion: the requirements posed by target and deposition physics

    SciTech Connect

    Mark, J.W.K.

    1981-10-19

    The demonstration of ICF scientific feasibility requires success in target design, driver development and target fabrication. Since these are interrelated, we present here some results of ion beam target studies and relate them to parameters of interest to ion accelerators. Ion deposition physics have long been a well known subject apart from high beam currents. Recent NRL experiments at up to 250 kA/cm/sup 2/ ions confirm the classical deposition physics now at current densities which are comparable to most ion targets. On the other hand, GSI data at low current density but 1 to 10 MeV/nucleon are continually being accumulated. They have yet to find anomalous results. Relying on target concepts outlined briefly, we report on the energy gain of ion-driven fusion targets as a function of input energy, ion ranges and focal spot radius. We also comment on some consequences of target gain versus driver and reactor requirements.

  4. Energy deposition through radiative processes in absorbers irradiated by electron beams

    NASA Astrophysics Data System (ADS)

    Tatsuo, Tabata; Pedro, Andreo; Kunihiko, Shinoda; Rinsuke, Ito

    1994-09-01

    The component of energy deposition due to radiative processes (bremsstrahlung component) in absorbers irradiated by electron beams has been computed together with the total energy deposition by using the ITS Monte Carlo system version 3.0. Plane-parallel electron beams with energies from 0.1 to 100 MeV have been assumed to be incident normally on the slab absorber, whose thickness is 2.5 times the continuous slowing-down approximation (csda) range of the incident electrons. Absorber materials considered are elemental solids with atomic numbers between 4 and 92 (Be, C, Al, Cu, Ag, Au and U). An analytic formula is given to express the depth profile of the bremsstrahlung component as a function of scaled depth (depth in units of the csda range), incident-electron energy and absorber atomic number. It is also applicable to compounds.

  5. Superconductivity in the system MoxCyGazOδ prepared by focused ion beam induced deposition

    NASA Astrophysics Data System (ADS)

    Weirich, P. M.; Schwalb, C. H.; Winhold, M.; Huth, M.

    2014-05-01

    We have prepared the new amorphous superconductor MoxCyGazOδ with a maximum critical temperature Tc of 3.8 K by the direct-write nano-patterning technique of focused (gallium) ion beam induced deposition (FIBID) using Mo(CO)6 as precursor gas. From a detailed analysis of the temperature-dependent resistivity and the upper critical field, we found clear evidence for proximity of the samples to a disorder-induced metal-insulator transition. We observed a strong dependence of Tc on the deposition parameters and identified clear correlations between Tc, the localization tendency visible in the resistance data and the sample composition. By an in-situ feedback-controlled optimization process in the FIB-induced growth, we were able to identify the beam parameters which lead to samples with the largest Tc-value and sharpest transition into the superconducting state.

  6. Ion beam deposition of amorphous carbon films with diamond like properties

    NASA Technical Reports Server (NTRS)

    Angus, John C.; Mirtich, Michael J.; Wintucky, Edwin G.

    1982-01-01

    Carbon films were deposited on silicon, quartz, and potassium bromide substrates from an ion beam. Growth rates were approximately 0.3 micron/hour. The films were featureless and amorphous and contained only carbon and hydrogen in significant amounts. The density and carbon/hydrogen ratio indicate the film is a hydrogen deficient polymer. One possible structure, consistent with the data, is a random network of methylene linkages and tetrahedrally coordinated carbon atoms.

  7. Direct evidence of strongly inhomogeneous energy deposition in target heating with laser-produced ion beams

    SciTech Connect

    Brambrink, E.; Audebert, P.; Schlegel, T.; Malka, G.; Aleonard, M. M.; Claverie, G.; Gerbaux, M.; Gobet, F.; Hannachi, F.; Scheurer, J. N.; Tarisien, M.; Amthor, K. U.; Meot, V.; Morel, P.

    2007-06-15

    We report on strong nonuniformities in target heating with intense, laser-produced proton beams. The observed inhomogeneity in energy deposition can strongly perturb equation of state (EOS) measurements with laser-accelerated ions which are planned in several laboratories. Interferometric measurements of the target expansion show different expansion velocities on the front and rear surfaces, indicating a strong difference in local temperature. The nonuniformity indicates at an additional heating mechanism, which seems to originate from electrons in the keV range.

  8. Direct evidence of strongly inhomogeneous energy deposition in target heating with laser-produced ion beams.

    PubMed

    Brambrink, E; Schlegel, T; Malka, G; Amthor, K U; Aléonard, M M; Claverie, G; Gerbaux, M; Gobet, F; Hannachi, F; Méot, V; Morel, P; Nicolai, P; Scheurer, J N; Tarisien, M; Tikhonchuk, V; Audebert, P

    2007-06-01

    We report on strong nonuniformities in target heating with intense, laser-produced proton beams. The observed inhomogeneity in energy deposition can strongly perturb equation of state (EOS) measurements with laser-accelerated ions which are planned in several laboratories. Interferometric measurements of the target expansion show different expansion velocities on the front and rear surfaces, indicating a strong difference in local temperature. The nonuniformity indicates at an additional heating mechanism, which seems to originate from electrons in the keV range.

  9. Transparent and Conductive Cadmium-Tin Oxide Films Deposited by Atom Beam Sputtering

    NASA Astrophysics Data System (ADS)

    Nakazawa, Tatsuo; Ito, Kentaro

    1988-09-01

    Transparent and conductive cadmium-tin oxide films with resistivities of 9× 10-4 Ω cm and transmittance higher than 80% over the visible range were prepared by atom beam sputtering. The structure of the deposited film was amorphous and its composition was highly deficient in CdO compared with Cd2SnO4. This CTO film was used as the window layer of a heterojunction solar cell.

  10. Comparison of Pd electron beam induced deposition using two precursors and an oxygen purification strategy

    NASA Astrophysics Data System (ADS)

    Mansilla, C.; Zondag, Y.; Mulders, J. J. L.; Trompenaars, P. H. F.

    2017-09-01

    Focused electron beam induced deposition (FEBID) allows the creation of nanoscale structures through dissociation of an organo-metallic precursor by electrons at the beam impact point. The deposition of Pd can be interesting for its catalytic behavior and ability to contact carbon based materials. Two precursors were investigated—Pd(hfac)2 and (Cp)Pd(allyl)—and two deposition methods: with and without an in situ oxygen purification process. The deposition parameters can be tuned for the Pd(hfac)2 precursor to provide a deposition with 23 ± 2 at.% of Pd and a main component of C at 51 ± 3 at.% and minor components of O and F. An in situ purification process using O2 was much faster than expected and improved the Pd content to up to >65 at.% while reducing the C to ∼20 at.%, and avoiding the oxidation of Pd. The resistivity was ∼100 μOhm · cm and compares favorably with a bulk value of 10 μOhm · cm. The (Cp)Pd(allyl) precursor is interesting because it does not release fluorine during the deposition and hence it does not etch a possible substrate. Its FEBID deposition had a composition of 26 ± 5 at.% of Pd with 74 ± 5 at.% of C. The O2 purification process can improve the Pd content up to ∼60 at.% while reducing C to <20 at.%, but also increasing the O content to 18 at%, which was released afterwards. The best resistivity was measured at ∼1000 μOhm · cm, although better values can be anticipated for longer post treatment times.

  11. Synchrotron radiation x-ray beam profile monitor using chemical vapor deposition diamond film

    SciTech Connect

    Kudo, Togo; Takahashi, Sunao; Nariyama, Nobuteru; Hirono, Toko; Tachibana, Takeshi; Kitamura, Hideo

    2006-12-15

    Photoluminescence (PL) of a Si-doped polycrystalline diamond film fabricated using the chemical vapor deposition technique was employed to measure the profile of a synchrotron radiation pink x-ray beam emitted from an in-vacuum hybrid undulator at the SPring-8 facility. The spectrum of the section of the diamond film penetrated by the emitted visible red light exhibited a peak at 739 nm and a wideband structure extending from 550 to 700 nm. The PL intensity increased with the absorbed dose of the incident beam in the diamond within a dynamic range of 10{sup 3}. A two-dimensional distribution of the PL intensity revealed the undulator beam profile.

  12. Power deposition measurements at 800 MeV-direct proton beam heating of target materials

    SciTech Connect

    Quintana, D.L.; Langenbrunner, J.; Morgan, G.

    1999-07-01

    A slug calorimetric sensor with several novel design features was developed to measure the power deposition in a cylindrical test article with lead, aluminum, polyethylene and tungsten components. A small, solid slug (volume = 347.5 mm{sup 3}) was suspended by Kevlar fibers and surrounded by an adiabatic enclosure in an insulating vacuum canister of stainless steel construction. A small, calibrated, 100-kOhm thermistor was placed in the slug to monitor the temperature. Power deposition caused by the passage of radiation through the slug was measured from the rate of temperature rise. Lead, tungsten, and Inconel-718 slugs were placed on the beam axis of the test article and were irradiated with an 800 MeV proton beam. The data from these sensors will provide an accurate determination of thermal power density and energy deposition from proton beams incident on target/blanket components of accelerator-based systems, such as the Accelerator Production of Tritium (APT) and the Spallation Neutron Source (SNS).

  13. Normal incidence reflectance of ion beam deposited SiC films in the EUV

    NASA Technical Reports Server (NTRS)

    Keski-Kuha, Ritva A. M.; Osantowski, John F.; Herzig, Howard; Gum, Jeffrey S.; Toft, Albert R.

    1988-01-01

    Results are presented from an experimental investigation of the normal-incidence reflectance at 58.4, 92.0, and 121.6 nm wavelength of 30- and 80-nm-thick SiC films produced by ion-beam deposition on unheated 5 x 5-cm microscope slides. The films were deposited in the 2-m evaporator described by Bradford et al. (1969) with chamber base pressure 1 microtorr, operating pressure 40 microtorr, and a 50-62-mA 750-eV Ar ion beam; the reflectance measurements were obtained in the reflector-monochromator system described by Osantowski (1974). Reflectances of over 30 percent were found at 92 and 121.6 nm, almost equal to those of polished CVD films of SiC and degrading only slightly after aging for 4 months. It is suggested that ion-beam deposition may be the best low-temperature technique for coating EUV optics for space astronomy.

  14. Ion beam deposition and surface characterization of thin multi-component oxide films during growth.

    SciTech Connect

    Krauss, A.R.; Im, J.; Smentkowski, V.; Schultz, J.A.; Auciello, O.; Gruen, D.M.; Holocek, J.; Chang, R.P.H.

    1998-01-13

    Ion beam deposition of either elemental targets in a chemically active gas such as oxygen or nitrogen, or of the appropriate oxide or nitride target, usually with an additional amount of ambient oxygen or nitrogen present, is an effective means of depositing high quality oxide and nitride films. However, there are a number of phenomena which can occur, especially during the production of multicomponent films such as the ferroelectric perovskites or high temperature superconducting oxides, which make it desirable to monitor the composition and structure of the growing film in situ. These phenomena include thermodynamic (Gibbsian), and oxidation or nitridation-driven segregation, enhanced oxidation or nitridation through production of a highly reactive gas phase species such as atomic oxygen or ozone via interaction of the ion beam with the target, and changes in the film composition due to preferential sputtering of the substrate via primary ion backscattering and secondary sputtering of the film. Ion beam deposition provides a relatively low background pressure of the sputtering gas, but the ambient oxygen or nitrogen required to produce the desired phase, along with the gas burden produced by the ion source, result in a background pressure which is too high by several orders of magnitude to perform in situ surface analysis by conventional means. Similarly, diamond is normally grown in the presence of a hydrogen atmosphere to inhibit the formation of the graphitic phase.

  15. Partially Ionized Beam-Deposited Aluminum on Silicon: Interface Reactions and Epitaxy.

    NASA Astrophysics Data System (ADS)

    Srinivasan, Radhika

    Aluminum, although a popular choice for metallization for Si based ICs, possesses a number of inherent problems when used as contact metal directly on Si, or as inter -connects. Two of the more critical ones are junction spiking and electromigration, both of which are diffusion related phenomena. The predominant mode of diffusion in thin films has long been established to be that due to grain boundaries. The polycrystalline nature of the deposited aluminum films is hence chiefly responsible for the above mentioned problems. If it were possible to reduce the number of grain boundaries and obtain epitaxial single crystal Al films on Si, the situation could be improved considerably. Epitaxial aluminum films on both Si(111) and (100) single crystal substrates can be deposited, using an ion assisted deposition method, referred to as the Partially Ionized Beam technique, where beam energy, current and direction can be controlled to optimize single crystallinity. This is inspite of the fact that the mismatch between Al and Si lattices is about 26%. In this research this technique is used to study the epitaxy of Al on Si. Electrical properties of such deposits were examined and defects present in these epitaxial deposits have been studied. Various x-ray and electron diffraction studies have been performed, including HRTEM to confirm the integrity of the interface and the 4 Al to 3 Si atom relationship. The orientation of the overlayers were found to be a strong function of beam energy and current. Use of high beam energies and currents while depositing ultra thin aluminum films were found to create donor like defects near the substrate surface, altering the electrical characteristics, especially of films on high resistivity p-silicon, where 'inverted' current-voltage characteristics were observed. These characteristics were also found to vary with thickness of deposited films. A MIS tunnel diode (with aluminum oxide as the insulator) model and an ion damage related defect

  16. Focused Electron and Ion Beam Induced Deposition on Flexible and Transparent Polycarbonate Substrates.

    PubMed

    Peinado, Patricia; Sangiao, Soraya; De Teresa, José M

    2015-06-23

    The successful application of focused electron (and ion) beam induced deposition techniques for the growth of nanowires on flexible and transparent polycarbonate films is reported here. After minimization of charging effects in the substrate, sub-100 nm-wide Pt, W, and Co nanowires have been grown and their electrical conduction is similar compared to the use of standard Si-based substrates. Experiments where the substrate is bent in a controlled way indicate that the electrical conduction is stable up to high bending angles, >50°, for low-resistivity Pt nanowires grown by the ion beam. On the other hand, the resistance of Pt nanowires grown by the electron beam changes significantly and reversibly with the bending angle. Aided by the substrate transparency, a diffraction grating in transmission mode has been built based on the growth of an array of Pt nanowires that shows sharp diffraction spots. The set of results supports the large potential of focused beam deposition as a high-resolution nanolithography technique on transparent and flexible substrates. The most promising applications are expected in flexible nano-optics and nanoplasmonics, flexible electronics, and nanosensing.

  17. Growth of Zircone on Nanoporous Alumina Using Molecular Layer Deposition

    NASA Astrophysics Data System (ADS)

    Hall, Robert A.; George, Steven M.; Kim, Yeongae; Hwang, Woonbong; Samberg, Meghan E.; Monteiro-Riviere, Nancy A.; Narayan, Roger J.

    2014-04-01

    Molecular layer deposition (MLD) is a sequential and self-limiting process that may be used to create hybrid organic/inorganic thin films from organometallic precursors and organic alcohol precursors. In this study, films of a zirconium-containing hybrid organic/inorganic polymer known as zircone were grown on nanoporous alumina using MLD. Scanning electron microscopy data showed obliteration of the pores in zircone-coated nanoporous alumina. An in vitro cell viability study indicated that the growth of human epidermal keratinocytes was the greatest on zircone-coated nanoporous alumina than on uncoated nanoporous alumina. Our results suggest that MLD may be used to create biocompatible coatings for use in many types of medical devices.

  18. Porous ZnO nanonetworks grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lee, W. C. T.; Kendrick, C. E.; Millane, R. P.; Liu, Z.; Ringer, S. P.; Washburn, K.; Callaghan, P. T.; Durbin, S. M.

    2012-04-01

    Plasma-assisted molecular beam epitaxy was employed to create porous nanonetworks of ZnO directly on GaN epilayers without the use of catalysts or templates. Detailed analysis of scanning electron microscopy (SEM) images of both as-grown and etched samples reveals that the typical porous nanonetwork structure is multilayered, and suggests that dislocations originating at the GaN/sapphire heterointerface and/or defects characterizing an unusually rough GaN surface are responsible. The pore size distribution of the nanonetwork was measured using nuclear magnetic resonance (NMR) cryoporometry. A bimodal pore size distribution centred at 4 nm and 70 nm, respectively, was observed, consistent with the existence of small nanoscale pores in the bulk of the sample, and large open pores on the surface of the porous nanonetwork as observed by SEM.

  19. Crossed-molecular-beams reactive scattering of oxygen atoms

    SciTech Connect

    Baseman, R.J.

    1982-11-01

    The reactions of O(/sup 3/P) with six prototypical unsaturated hydrocarbons, and the reaction of O(/sup 1/D) with HD, have been studied in high-resolution crossed-molecular-beams scattering experiments with mass-spectrometric detection. The observed laboratory-product angular and velocity distributions unambiguously identify parent-daughter ion pairs, distinguish different neutral sources of the same ion, and have been used to identify the primary products of the reactions. The derived center-of-mass product angular and translational energy distributions have been used to elucidate the detailed reaction dynamics. These results demonstrate that O(/sup 3/P)-unsaturated hydrocarbon chemistry is dominated by single bond cleavages, leading to radical products exclusively.

  20. Atmospheric processes on ice nanoparticles in molecular beams

    PubMed Central

    Fárník, Michal; Poterya, Viktoriya

    2014-01-01

    This review summarizes some recent experiments with ice nanoparticles (large water clusters) in molecular beams and outlines their atmospheric relevance: (1) Investigation of mixed water–nitric acid particles by means of the electron ionization and sodium doping combined with photoionization revealed the prominent role of HNO3 molecule as the condensation nuclei. (2) The uptake of atmospheric molecules by water ice nanoparticles has been studied, and the pickup cross sections for some molecules exceed significantly the geometrical sizes of the ice nanoparticles. (3) Photodissociation of hydrogen halides on water ice particles has been shown to proceed via excitation of acidically dissociated ion pair and subsequent biradical generation and H3O dissociation. The photodissociation of CF2Cl2 molecules in clusters is also mentioned. Possible atmospheric consequences of all these results are briefly discussed. PMID:24790973

  1. Production and all-optical deceleration of molecular beams

    NASA Astrophysics Data System (ADS)

    Chen, Gary; Jayich, Andrew; Long, Xueping; Ransford, Anthony; Campbell, Wesley

    2015-05-01

    Ultracold molecules open up new opportunities in many areas of study, including many-body physics, quantum chemistry, quantum information, and precision measurements. Current methods cannot easily address the spontaneous decay of molecules into dark states without an amalgam of repump lasers. We present an alternative method to produce cold molecules. A cryogenic buffer gas beam (CBGB) is used to create an intense, slow, cold source of molecules. By using a CBGB for the production, we can quench vibrational modes that cannot be addressed with optical methods. This is then followed by an all-optical scheme using a single ultra-fast laser to decelerate the molecules and a continuous wave laser to cool the species. We have started experiments with strontium monohydride (SrH), but the proposed method should be applicable to a wide range of molecular species.

  2. InPBi single crystals grown by molecular beam epitaxy.

    PubMed

    Wang, K; Gu, Y; Zhou, H F; Zhang, L Y; Kang, C Z; Wu, M J; Pan, W W; Lu, P F; Gong, Q; Wang, S M

    2014-06-26

    InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V = P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III-V compound family member for heterostructures. The Bi concentration is found to be 2.4 ± 0.4% with 94 ± 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4-2.7 μm which can't be explained by the existing theory.

  3. Graphitic carbon grown on fluorides by molecular beam epitaxy.

    PubMed

    Jerng, Sahng-Kyoon; Lee, Jae Hong; Kim, Yong Seung; Chun, Seung-Hyun

    2013-01-03

    We study the growth mechanism of carbon molecules supplied by molecular beam epitaxy on fluoride substrates (MgF2, CaF2, and BaF2). All the carbon layers form graphitic carbon with different crystallinities depending on the cation. Especially, the growth on MgF2 results in the formation of nanocrystalline graphite (NCG). Such dependence on the cation is a new observation and calls for further systematic studies with other series of substrates. At the same growth temperature, the NCG on MgF2 has larger clusters than those on oxides. This is contrary to the general expectation because the bond strength of the carbon-fluorine bond is larger than that of the carbon-oxygen bond. Our results show that the growth of graphitic carbon does not simply depend on the chemical bonding between the carbon and the anion in the substrate.

  4. Effects of shutter transients in molecular beam epitaxy.

    PubMed

    Gozu, Shin-Ichiro; Mozume, Teruo; Kuwatsuka, Haruhiko; Ishikawa, Hiroshi

    2012-11-12

    : We have studied the effects of shutter transients (STs) in molecular beam epitaxy (MBE). Two series of samples were grown by MBE and evaluated by X-ray diffraction (XRD) and X-ray reflectivity (XRR) measurements. The effects of STs were evaluated by growth rate (GR) analysis using a combination of growth time (GT) and thickness evaluated by XRD and XRR measurements. We revealed two opposite effects of STs: (1) overshoot of GR and (2) increase in GR with GT and subsequent saturation. Each effect was consistent with the previous studies; however, the previous studies showed no relationships between these two effects. By considering closing time of the shutter, the two opposite effects were well understood.

  5. Indium antimonide doped with manganese grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Partin, D. L.; Heremans, J.; Thrush, C. M.

    1997-05-01

    Indium antimonide is of interest for infrared detecting and emitting devices and for magnetic field sensors. In this study, indium antimonide doped with manganese and grown by molecular beam epitaxy was investigated. Secondary ion mass spectroscopy (SIMS) was used to show that the incorporation of managenese is near unity over a wide range of manganese concentrations. Manganese is observed to be an acceptor with a dopant efficiency which follows a power law in which the hole density is proportional to the manganese concentration raised to the power α. The power α depends on the growth temperature; at 300°C, α = 0.86 and at 360°C, α = 0.78. Lightly manganese doped samples have transport dominated by electrons at low temperatures due to hole freeze out, followed by holes at intermediate temperatures and finally by intrinsic electrons at high temperatures. Additional SIMS studies showed that manganese diffuses relatively slowly in indium antimonide.

  6. Molecular beam-thermal hydrogen desorption from palladium

    SciTech Connect

    Lobo, R. F. M.; Berardo, F. M. V.; Ribeiro, J. H. F.

    2010-04-15

    Among the most efficient techniques for hydrogen desorption monitoring, thermal desorption mass spectrometry is a very sensitive one, but in certain cases can give rise to uptake misleading results due to residual hydrogen partial pressure background variations. In this work one develops a novel thermal desorption variant based on the effusive molecular beam technique that represents a significant improvement in the accurate determination of hydrogen mass absorbed on a solid sample. The enhancement in the signal-to-noise ratio for trace hydrogen is on the order of 20%, and no previous calibration with a chemical standard is required. The kinetic information obtained from the hydrogen desorption mass spectra (at a constant heating rate of 1 deg. C/min) accounts for the consistency of the technique.

  7. Silicon surface preparation for III-V molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Madiomanana, K.; Bahri, M.; Rodriguez, J. B.; Largeau, L.; Cerutti, L.; Mauguin, O.; Castellano, A.; Patriarche, G.; Tournié, E.

    2015-03-01

    We report on a silicon substrate preparation for III-V molecular-beam epitaxy (MBE). It combines sequences of ex situ and in situ treatments. The ex situ process is composed of cycles of HF dip and O2 plasma treatments. Ellipsometry and atomic force microscopy performed after each step during the substrate preparation reveal surface cleaning and de-oxidation. The in situ treatment consists in flash annealing the substrate in the MBE chamber prior to epitaxial growth. GaSb-based multiple quantum well heterostructures emitting at 1.55 μm were grown by MBE on Si substrates prepared by different methods. Structural characterizations using XRD and TEM coupled with photoluminescence spectroscopy demonstrates the efficiency of our preparation process. This study thus unravels a simple and reproducible protocol to prepare the Si surface prior to III-V MBE.

  8. A high pressure modulated molecular beam mass spectrometric sampling system

    NASA Technical Reports Server (NTRS)

    Stearns, C. A.; Kohl, F. J.; Fryburg, G. C.; Miller, R. A.

    1977-01-01

    The current state of understanding of free-jet high pressure sampling is critically reviewed and modifications of certain theoretical and empirical considerations are presented. A high pressure, free-jet expansion, modulated molecular beam, mass spectrometric sampling apparatus was constructed and this apparatus is described in detail. Experimental studies have demonstrated that the apparatus can be used to sample high temperature systems at pressures up to one atmosphere. Condensible high temperature gaseous species have been routinely sampled and the mass spectrometric detector has provided direct identification of sampled species. System sensitivity is better than one tenth of a part per million. Experimental results obtained with argon and nitrogen beams are presented and compared to theoretical predictions. These results and the respective comparison are taken to indicate acceptable performance of the sampling apparatus. Results are also given for two groups of experiments related to hot corrosion studies. The formation of gaseous sodium sulfate in doped methane-oxygen flames was characterized and the oxidative vaporization of metals was studied in an atmospheric pressure flowing gas system to which gaseous salt partial pressures were added.

  9. Molecular Beam Epitaxy Growth of GaBi, InBi and InGaBi

    NASA Astrophysics Data System (ADS)

    Keen, B.; Makin, R.; Stampe, P. A.; Kennedy, R. J.; Piper, L. F. J.; McCombe, B.; McConville, C. F.; Durbin, S. M.

    2014-03-01

    Recent interest in bismuth alloys of III-V semiconductors for infrared and far-infrared device applications, specifically GaAsBi and InAsBi, has indicated that further study of the III-Bi family of binary compounds would be of great help in improving the quality of these material systems. While immiscibility issues have so far frustrated the growth of GaBi and AlBi, InBi is less problematic, and we have grown it by molecular beam epitaxy on (001) GaAs substrates. However, regions of varying composition exist across the substrate due to poor wetting of the surface. In an effort to improve film quality we have continued to refine the growth parameters by adjusting substrate temperature, beam flux ratio, and deposition rate. Characterization of these films has been performed by x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). Additionally, we have explored growth of GaBi and In1-xGaxBi at low Ga mole fractions, and modeled this using molecular dynamics simulations. This work is supported by the Research Foundation of the State University of New York Collaborations Fund.

  10. Solution deposition planarization for ion beam texturing of long-length flexible substrates

    SciTech Connect

    Sheehan, Chris J; Jung, Yehyun; Holesinger, Terry G; Matias, Vladimir

    2010-12-01

    We present the results of a study of solution deposition planarization (SDP) for preparing smooth flexible substrates in long lengths. Roll to roll fabrication of electronic and power devices with single-crystal properties are desired for inexpensive production. Using the SDP process we have achieved 0.5 nm RMS roughness from a starting roughness of over 20 nm on 5 {micro}m areas. We model the surface roughness reduction as governed by the amount of film shrinkage during solution deposition, number of coatings, solution composition and a residual roughness based on film thickness. This process is extremely well suited for ion-beam texturing of MgO. By utilizing solution deposition of a-Y{sub 2}O{sub 3} to planarize the substrate we create the required surface for in-plane MgO texturing using assisted ion-beam deposition. We have achieved in-plane texture FWHM of 4{sup o} on the SDP substrates. Using an appropriate simple layer architecture for superconducting coated conductors we attained critical currents in excess of 3 MA/cm{sup 2} at 75 K for 1-1.2 {micro}m thick YBa{sub 2}Cu{sub 3}O{sub y} films.

  11. Single-crystal nanowires grown via electron-beam-induced deposition

    NASA Astrophysics Data System (ADS)

    Klein, K. L.; Randolph, S. J.; Fowlkes, J. D.; Allard, L. F.; Meyer, H. M., III; Simpson, M. L.; Rack, P. D.

    2008-08-01

    Electron-beam-induced deposition (EBID) is a useful technique for direct-writing of three-dimensional dielectric, semiconductor, and metallic materials with nanoscale precision and resolution. The EBID process, however, has been limited in many cases because precursor byproducts (typically from organic precursors like W(CO)6) are incorporated into the deposited material resulting in contaminated and amorphous structures. In this work, we have investigated the structure and composition of EBID tungsten nanostructures as-deposited from a tungsten hexafluoride (WF6) precursor. High resolution transmission electron microscopy, electron diffraction and electron spectroscopy were employed to determine the effects that the electron beam scanning conditions have on the deposit characteristics. The results show that slow, one-dimensional lateral scanning produces textured β-tungsten nanowire cores surrounded by an oxide secondary layer, while stationary vertical growth leads to single-crystal [100]-oriented W3O nanowires. Furthermore we correlate how the growth kinetics affect the resultant nanowire structure and composition.

  12. Pressure effect of growing with electron beam-induced deposition with tungsten hexafluoride and tetraethylorthosilicate precursor.

    PubMed

    Choi, Young R; Rack, Philip D; Randolph, Steven J; Smith, Daryl A; Joy, David C

    2006-01-01

    Electron beam-induced deposition (EBID) provides a simple way to fabricate submicron- or nanometer-scale structures from various elements in a scanning electron microscope (SEM). The growth rate and shape of the deposits are influenced by many factors. We have studied the growth rate and morphology of EBID-deposited nanostructures as a function of the tungsten hexafluoride (WF6) and tetraethylorthosilicate (TEOS) precursor gas pressure and growth time, and we have used Monte Carlo simulations to model the growth of tungsten and silicon oxide to elucidate the mechanisms involved in the EBID growth. The lateral radius of the deposit decreases with increasing pressure because of the enhanced vertical growth rate which limits competing lateral broadening produced by secondary and forward-scattered electrons. The morphology difference between the conical SiO(x) and the cylindrical W nanopillars is related to the difference in interaction volume between the two materials. A key parameter is the residence time of the precursor gas molecules. This is an exponential function of the surface temperature; it changes during nanopillar growth and is a function of the nanopillar material and the beam conditions.

  13. In situ growth optimization in focused electron-beam induced deposition

    PubMed Central

    Weirich, Paul M; Winhold, Marcel; Huth, Michael

    2013-01-01

    Summary We present the application of an evolutionary genetic algorithm for the in situ optimization of nanostructures that are prepared by focused electron-beam-induced deposition (FEBID). It allows us to tune the properties of the deposits towards the highest conductivity by using the time gradient of the measured in situ rate of change of conductance as the fitness parameter for the algorithm. The effectiveness of the procedure is presented for the precursor W(CO)6 as well as for post-treatment of Pt–C deposits, which were obtained by the dissociation of MeCpPt(Me)3. For W(CO)6-based structures an increase of conductivity by one order of magnitude can be achieved, whereas the effect for MeCpPt(Me)3 is largely suppressed. The presented technique can be applied to all beam-induced deposition processes and has great potential for a further optimization or tuning of parameters for nanostructures that are prepared by FEBID or related techniques. PMID:24367761

  14. In situ growth optimization in focused electron-beam induced deposition.

    PubMed

    Weirich, Paul M; Winhold, Marcel; Schwalb, Christian H; Huth, Michael

    2013-01-01

    We present the application of an evolutionary genetic algorithm for the in situ optimization of nanostructures that are prepared by focused electron-beam-induced deposition (FEBID). It allows us to tune the properties of the deposits towards the highest conductivity by using the time gradient of the measured in situ rate of change of conductance as the fitness parameter for the algorithm. The effectiveness of the procedure is presented for the precursor W(CO)6 as well as for post-treatment of Pt-C deposits, which were obtained by the dissociation of MeCpPt(Me)3. For W(CO)6-based structures an increase of conductivity by one order of magnitude can be achieved, whereas the effect for MeCpPt(Me)3 is largely suppressed. The presented technique can be applied to all beam-induced deposition processes and has great potential for a further optimization or tuning of parameters for nanostructures that are prepared by FEBID or related techniques.

  15. Supersonic Molecular Beam Optical Stark Spectroscopy of MnH.

    NASA Astrophysics Data System (ADS)

    Gengler, Jamie; Ma, Tongmei; Harrison, Jeremy; Steimle, Timothy

    2006-03-01

    The large moment of inertia, large magnetic moment, and possible large permanent electric dipole moment of manganese monohydride, MnH, makes it a prime candidate for ultra-cold molecule production via Stark deceleration and magnetic trapping. Here we report the first molecular beam production of MnH and the analysis of the Stark effect in the (0,0) A^7 π -- X^ 7σ^+ band. The sample was prepared by laser ablation of solid Mn in an H2 supersonic expansion. The low rotational temperature (<50 K) and near natural linewidth resolution (˜50 MHz) facilitated analysis of the ^55Mn (I=5/2) and ^1H (I=1/2) hyperfine structure. A comparison of the derived field-free parameters with those obtained from sub- Doppler optical measurements will be made. Progress on the analysis of the Stark effect will be given. J.R. Bochinski, E.R. Hudson, H.J. Lewandowski, and J. Ye, Phys. Rev. A 70, 043410 (2004). S.Y.T. van de Meerakker, R.T. Jongma, H.L. Bethlem, and G. Meijer, Phys. Rev. A 64, 041401(R) (2001) report the first molecular beam production of MnH and the analysis of T.D. Varberg, J.A. Gray, R.W. Field, and A.J. Merer, J. Mol. Spec. 156, 296-318 (1992). I.E. Gordon, D.R.T. Appadoo, A. Shayesteh, K.A. Walker, and P.F. Bernath, J. Mol. Spec., 229, 145-149 (2005).

  16. Exchange bias in polycrystalline magnetite films made by ion-beam assisted deposition

    SciTech Connect

    Kaur, Maninder; Jiang, Weilin; Qiang, You; Burks, Edward; Liu, Kai; Namavar, Fereydoon; Mccloy, John S.

    2014-11-03

    Iron oxide films were deposited onto Si substrates using ion-beam-assisted deposition. The films were ~300 nm thick polycrystalline magnetite with an average crystallite size of ~6 nm. Additionally, incorporation of significant fractions of argon in the films from ion bombardment is evident from chemical analysis, and Fe/O ratios are lower than expected from pure magnetite. However, Raman spectroscopy and x-ray diffraction both indicate that the films are single-phase magnetite. Since no direct evidence of a second phase could be found, exchange bias likely arises due to defects at grain boundaries, possibly amorphous, creating frustrated spins. Since these samples have such small grains, a large fraction of the material consists of grain boundaries, where spins are highly disordered and reverse independently with external field. The high energy deposition process results in an oxygen-rich, argon-containing magnetite film with low temperature exchange bias due to defects at the high concentration of grain boundaries.

  17. Silicon dioxide mask by plasma enhanced atomic layer deposition in focused ion beam lithography

    NASA Astrophysics Data System (ADS)

    Liu, Zhengjun; Shah, Ali; Alasaarela, Tapani; Chekurov, Nikolai; Savin, Hele; Tittonen, Ilkka

    2017-02-01

    In this work, focused ion beam (FIB) lithography was developed for plasma enhanced atomic layer deposited (PEALD) silicon dioxide SiO2 hard mask. The PEALD process greatly decreases the deposition temperature of the SiO2 hard mask. FIB Ga+ ion implantation on the deposited SiO2 layer increases the wet etch resistivity of the irradiated region. A programmed exposure in FIB followed by development in a wet etchant enables the precisely defined nanoscale patterning. The combination of FIB exposure parameters and the development time provides greater freedom for optimization. The developed process provides high pattern dimension accuracy over the tested range of 90-210 nm. Utilizing the SiO2 mask developed in this work, silicon nanopillars with 40 nm diameter were successfully fabricated with cryogenic deep reactive ion etching and the aspect ratio reached 16:1. The fabricated mask is suitable for sub-100 nm high aspect ratio silicon structure fabrication.

  18. Silicon dioxide mask by plasma enhanced atomic layer deposition in focused ion beam lithography.

    PubMed

    Liu, Zhengjun; Shah, Ali; Alasaarela, Tapani; Chekurov, Nikolai; Savin, Hele; Tittonen, Ilkka

    2017-02-24

    In this work, focused ion beam (FIB) lithography was developed for plasma enhanced atomic layer deposited (PEALD) silicon dioxide SiO2 hard mask. The PEALD process greatly decreases the deposition temperature of the SiO2 hard mask. FIB Ga(+) ion implantation on the deposited SiO2 layer increases the wet etch resistivity of the irradiated region. A programmed exposure in FIB followed by development in a wet etchant enables the precisely defined nanoscale patterning. The combination of FIB exposure parameters and the development time provides greater freedom for optimization. The developed process provides high pattern dimension accuracy over the tested range of 90-210 nm. Utilizing the SiO2 mask developed in this work, silicon nanopillars with 40 nm diameter were successfully fabricated with cryogenic deep reactive ion etching and the aspect ratio reached 16:1. The fabricated mask is suitable for sub-100 nm high aspect ratio silicon structure fabrication.

  19. Processing-structure-property relationships in electron beam physical vapor deposited yttria stabilized zirconia coatings

    SciTech Connect

    Rao, D. Srinivasa; Valleti, Krishna; Joshi, S. V.; Janardhan, G. Ranga

    2011-05-15

    The physical and mechanical properties of yttria stabilized zirconia (YSZ) coatings deposited by the electron beam physical vapor deposition technique have been investigated by varying the key process variables such as vapor incidence angle and sample rotation speed. The tetragonal zirconia coatings formed under varying process conditions employed were found to have widely different surface and cross-sectional morphologies. The porosity, phase composition, planar orientation, hardness, adhesion, and surface residual stresses in the coated specimens were comprehensively evaluated to develop a correlation with the process variables. Under transverse scratch test conditions, the YSZ coatings exhibited two different crack formation modes, depending on the magnitude of residual stress. The influence of processing conditions on the coating deposition rate, column orientation angle, and adhesion strength has been established. Key relationships between porosity, hardness, and adhesion are also presented.

  20. Production of molecular ion beams using an electron cyclotron resonance ion source

    SciTech Connect

    Draganić, I. N.; Bannister, M. E.; Meyer, F. W.; Vane, C. R.; Havener, C. C.

    2011-06-01

    An all-permanent magnet electron cyclotron resonance (ECR) ion source is tuned to create a variety of intense molecular ion beams for basic energy research. Based on simultaneous injection of several gases with spectroscopic high purity or enriched isotope content (e.g., H2, D2, N2, O2, or CO) and lower power microwave heating, the ECR ion source produces diatomic molecular ion beams of H2+, D2+, HD+, HO+, DO+, NH+, ND+, and more complex polyatomic molecular ions such as H3+, D3+, HD2+, H2O+, D2O+, H3O+, D3O+, and NHn+, NDn+ with n=2,3,4 and possibly higher. Molecular ion beams have been produced with very high current intensities compared to other molecular beam sources. The recorded molecular ion beam spectra are discussed.

  1. Influence of Molecular Shape on the Thermal Stability and Molecular Orientation of Vapor-Deposited Organic Semiconductors

    DOE Data Explorer

    Walters, Diane M [University of Wisconsin-Madison] (ORCID:0000000253706563); Antony, Lucas [University of Chicago] (ORCID:0000000319336500); de Pablo, Juan [University of Chicago] (ORCID:000000023526516X); Ediger, Mark [University of Wisconsin-Madison] (ORCID:0000000347158473)

    2017-07-25

    High thermal stability and anisotropic molecular orientation enhance the performance of vapor-deposited organic semiconductors, but controlling these properties is a challenge in amorphous materials. To understand the influence of molecular shape on these properties, vapor-deposited glasses of three disk-shaped molecules were prepared. For all three systems, enhanced thermal stability is observed for glasses prepared over a wide range of substrate temperatures and anisotropic molecular orientation is observed at lower substrate temperatures. For two of the disk-shaped molecules, atomistic simulations of thin films were also performed and anisotropic molecular orientation was observed at the equilibrium liquid surface. We find that the structure and thermal stability of these vapor-deposited glasses results from high surface mobility and partial equilibration toward the structure of the equilibrium liquid surface during the deposition process. For the three molecules studied, molecular shape is a dominant factor in determining the anisotropy of vapor-deposited glasses.

  2. Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

    SciTech Connect

    Dangwal Pandey, A. Grånäs, E.; Shayduk, R.; Noei, H.; Vonk, V.; Krausert, K.; Franz, D.; Müller, P.; Keller, T. F.; Stierle, A.

    2016-08-21

    Heteroepitaxial iridium thin films were deposited on (0001) sapphire substrates by means of molecular beam epitaxy, and subsequently, one monolayer of graphene was synthesized by chemical vapor deposition. The influence of the growth parameters on the quality of the Ir films, as well as of graphene, was investigated systematically by means of low energy electron diffraction, x-ray reflectivity, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Our study reveals (111) oriented iridium films with high crystalline quality and extremely low surface roughness, on which the formation of large-area epitaxial graphene is achieved. The presence of defects, like dislocations, twins, and 30° rotated domains in the iridium films is also discussed. The coverage of graphene was found to be influenced by the presence of 30° rotated domains in the Ir films. Low iridium deposition rates suppress these rotated domains and an almost complete coverage of graphene was obtained. This synthesis route yields inexpensive, air-stable, and large-area graphene with a well-defined orientation, making it accessible to a wider community of researchers for numerous experiments or applications, including those which use destructive analysis techniques or irreversible processes. Moreover, this approach can be used to tune the structural quality of graphene, allowing a systematic study of the influence of defects in various processes like intercalation below graphene.

  3. Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Dangwal Pandey, A.; Krausert, K.; Franz, D.; Grânäs, E.; Shayduk, R.; Müller, P.; Keller, T. F.; Noei, H.; Vonk, V.; Stierle, A.

    2016-08-01

    Heteroepitaxial iridium thin films were deposited on (0001) sapphire substrates by means of molecular beam epitaxy, and subsequently, one monolayer of graphene was synthesized by chemical vapor deposition. The influence of the growth parameters on the quality of the Ir films, as well as of graphene, was investigated systematically by means of low energy electron diffraction, x-ray reflectivity, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Our study reveals (111) oriented iridium films with high crystalline quality and extremely low surface roughness, on which the formation of large-area epitaxial graphene is achieved. The presence of defects, like dislocations, twins, and 30° rotated domains in the iridium films is also discussed. The coverage of graphene was found to be influenced by the presence of 30° rotated domains in the Ir films. Low iridium deposition rates suppress these rotated domains and an almost complete coverage of graphene was obtained. This synthesis route yields inexpensive, air-stable, and large-area graphene with a well-defined orientation, making it accessible to a wider community of researchers for numerous experiments or applications, including those which use destructive analysis techniques or irreversible processes. Moreover, this approach can be used to tune the structural quality of graphene, allowing a systematic study of the influence of defects in various processes like intercalation below graphene.

  4. Microwave ion beam sources for reactive etching and sputter deposition applications

    NASA Astrophysics Data System (ADS)

    Jolly, T. W.; Blackborrow, P.

    1990-01-01

    There are important industrial applications for broadbeam microwave ion beam sources which give current densities in the range 0.1-4.0 mA/cm2 at energies between 100 and 1500 eV. These include machines for the production of multilayer optical coatings by means of ion beam sputter deposition, and cassette-to-cassette machines for inert and reactive ion beam etching of semiconductor wafers. In both cases, the ability to run reliably, and at high power for several hundred hours without unscheduled maintenance is most valuable, and may well justify the extra cost of such a source over the conventional Kaufman hot-filament source. The sources discussed in this article use dual high-power grids of pyrolytic graphite, using a self-aligning design, to produce uniform ion beams with diameters of up to l2 cm. Stabilities of better than 1% over several hundred hours of operation are achieved. The design of the discharge chamber and grids enables operation on most inert and reactive gas mixtures. Typical run data and beam profiles obtained when running on argon, oxygen, and chlorine will be presented.

  5. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  6. Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

    PubMed Central

    Baiutti, Federico; Christiani, Georg

    2014-01-01

    Summary In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2− xSrxNiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control. PMID:24995148

  7. Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy.

    PubMed

    Baiutti, Federico; Christiani, Georg; Logvenov, Gennady

    2014-01-01

    In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2- x Sr x NiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control.

  8. Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Corrion, A. L.; Wu, F.; Speck, J. S.

    2012-09-01

    c-plane GaN films were grown by ammonia molecular beam epitaxy on metal-organic chemical vapor deposition templates for a wide range of NH3:Ga flux ratios and growth temperatures, and the resulting films were characterized using atomic force microscopy, reflection high-energy electron diffraction, and transmission electron microscopy. Three distinct nitrogen-rich growth regimes—unstable layer-by-layer, quasi-stable step flow, and dislocation-mediated pitting—were identified based on the growth mode and film properties. In addition, step flow growth was observed under conditions of gallium droplet accumulation. The results indicate the existence of two regimes for step-flow growth of GaN by ammonia MBE—both gallium-rich and nitrogen-rich. Growth mode instabilities and mound formation were observed and are discussed in the context of a step-edge energy barrier to adatom diffusion over a terrace.

  9. Ferromagnet-semiconductor nanowire coaxial heterostructures grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Hilse, M.; Takagaki, Y.; Herfort, J.; Ramsteiner, M.; Herrmann, C.; Breuer, S.; Geelhaar, L.; Riechert, H.

    2009-09-01

    GaAs-MnAs core-shell structures are grown by molecular-beam epitaxy using wurtzite GaAs nanowires on GaAs(111)B. The nanowire structures curve due to the strain at the heterointerface when the substrate is not rotated during the growth, evidencing the diffusion length in the MnAs overgrowth being less than the perimeter of the columns. The MnAs growth is thus demonstrated to take place by direct deposition on the sidewall. The MnAs envelope is m-plane-oriented with the c-axis along the nanowire axis. The magnetic easy axis hence lies in the surface plane of the substrate, which is confirmed by magnetization measurements and magnetic-force microscopy.

  10. Adsorption-controlled molecular-beam epitaxial growth of BiFeO{sub 3}

    SciTech Connect

    Ihlefeld, J. F.; Kumar, A.; Gopalan, V.; Schlom, D. G.; Chen, Y. B.; Pan, X. Q.; Heeg, T.; Schubert, J.; Ke, X.; Schiffer, P.; Orenstein, J.; Martin, L. W.; Chu, Y. H.; Ramesh, R.

    2007-08-13

    BiFeO{sub 3} thin films have been deposited on (111) SrTiO{sub 3} single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth overpressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO{sub 3} to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, untwinned, epitaxial (0001)-oriented films with rocking curve full width at half maximum values as narrow as 25 arc sec (0.007 deg.). Second harmonic generation polar plots combined with diffraction establish the crystallographic point group of these untwinned epitaxial films to be 3m at room temperature.

  11. Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires

    SciTech Connect

    Fontcuberta i Morral, A.; Colombo, C.; Abstreiter, G.; Arbiol, J.; Morante, J. R.

    2008-02-11

    Molecular beam epitaxy Ga-assisted synthesis of GaAs nanowires is demonstrated. The nucleation and growth are seen to be related to the presence of a SiO{sub 2} layer previously deposited on the GaAs wafer. The interaction of the reactive gallium with the SiO{sub 2} pinholes induces the formation of nanocraters, found to be the key for the nucleation of the nanowires. With SiO{sub 2} thicknesses up to 30 nm, nanocraters reach the underlying substrate, resulting into a preferential growth orientation of the nanowires. Possibly related to the formation of nanocraters, we observe an incubation period of 258 s before the nanowires growth is initiated.

  12. Ge profile from the growth of SiGe buried layers by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Godbey, D. J.; Ancona, M. G.

    1992-11-01

    X-ray photoelectron spectroscopy measurements were obtained and interpreted by a kinetic simulation to determine the germanium concentration profile of thin Si/SiGe heterostructures grown at 500 °C using elemental source molecular beam epitaxy. The primary finding is that there are significant segregation effects in these commonly grown structures which affect both the ``leading'' and ``trailing'' interfaces. Upon opening of the germanium shutter, the surface monolayer must be built up to a germanium composition of greater than 96% before the composition of the deposited alloy layer is equal to the flux composition for a Ge ratio of 0.3. This buildup causes the germanium depletion at the leading interface. Upon termination of the germanium flux, the incorporation of the germanium rich monolayer into the growing silicon cap layer causes a corresponding degradation of the trailing interface.

  13. Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Chou, C. Y.; Torfi, A.; Pei, C.; Wang, W. I.

    2016-05-01

    In this work, the effects of substrate orientation on InSb quantum structure growth by molecular beam epitaxy (MBE) are presented. Motivated by the observation that (411) evolves naturally as a stable facet during MBE crystal growth, comparison studies have been carried out to investigate the effects of the crystal orientation of the underlying GaSb substrate on the growth of InSb by MBE. By depositing InSb on a number of different substrate orientations, namely: (100), (311), (411), and (511), a higher nanostructure density was observed on the (411) surface compared with the other orientations. This result suggests that the (411) orientation presents a superior surface in MBE growth to develop a super-flat GaSb buffer surface, naturally favorable for nanostructure growth.

  14. Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy

    SciTech Connect

    Wofford, Joseph M. E-mail: lopes@pdi-berlin.de; Lopes, Joao Marcelo J. E-mail: lopes@pdi-berlin.de; Riechert, Henning; Speck, Florian; Seyller, Thomas

    2016-07-28

    The efficacy of Ni as a surfactant to improve the crystalline quality of graphene grown directly on dielectric Al{sub 2}O{sub 3}(0001) substrates by molecular beam epitaxy is examined. Simultaneously exposing the substrate to a Ni flux throughout C deposition at 950 °C led to improved charge carrier mobility and a Raman spectrum indicating less structural disorder in the resulting nanocrystalline graphene film. X-ray photoelectron spectroscopy confirmed that no residual Ni could be detected in the film and showed a decrease in the intensity of the defect-related component of the C1s level. Similar improvements were not observed when a lower substrate temperature (850 °C) was used. A close examination of the Raman spectra suggests that Ni reduces the concentration of lattice vacancies in the film, possibly by catalytically assisting adatom incorporation.

  15. Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

    SciTech Connect

    Nakhaie, S.; Wofford, J. M.; Schumann, T.; Jahn, U.; Ramsteiner, M.; Hanke, M.; Lopes, J. M. J. Riechert, H.

    2015-05-25

    Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.

  16. Asymmetric interfaces in Fe/Ag and Ag/Fe bilayers prepared by molecular beam evaporation

    NASA Astrophysics Data System (ADS)

    Tunyogi, A.; Pászti, F.; Osváth, Z.; Tanczikó, F.; Major, M.; Szilágyi, E.

    2006-08-01

    Single layers of Fe and Ag, as well as Fe/Ag (iron deposited first) and Ag/Fe bilayers were prepared by molecular beam evaporation onto Si. The samples were investigated with backscattering spectrometry (BS) and atomic force microscopy (AFM). BS spectra of Fe/Ag and Ag/Fe indicate a significant difference at the interface. In the case of Fe/Ag the Ag peak has a long tail at the interface, while for Ag/Fe the interface is abrupt. The tail in the Fe/Ag spectrum is too large to be caused by double or plural scattering. According to AFM, the effect of surface roughness is also negligible. In spite of the fact that Fe and Ag are completely immiscible in equilibrium, this tail, however, suggests that some Ag is located in the Fe layer. After annealing, both samples show mixing between the two layers; this is much larger again for Fe/Ag.

  17. Molecular dynamics and dynamic Monte-Carlo simulation of irradiation damage with focused ion beams

    NASA Astrophysics Data System (ADS)

    Ohya, Kaoru

    2017-03-01

    The focused ion beam (FIB) has become an important tool for micro- and nanostructuring of samples such as milling, deposition and imaging. However, this leads to damage of the surface on the nanometer scale from implanted projectile ions and recoiled material atoms. It is therefore important to investigate each kind of damage quantitatively. We present a dynamic Monte-Carlo (MC) simulation code to simulate the morphological and compositional changes of a multilayered sample under ion irradiation and a molecular dynamics (MD) simulation code to simulate dose-dependent changes in the backscattering-ion (BSI)/secondary-electron (SE) yields of a crystalline sample. Recent progress in the codes for research to simulate the surface morphology and Mo/Si layers intermixing in an EUV lithography mask irradiated with FIBs, and the crystalline orientation effect on BSI and SE yields relating to the channeling contrast in scanning ion microscopes, is also presented.

  18. Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy

    SciTech Connect

    Corrion, A. L.; Wu, F.; Speck, J. S.

    2012-09-01

    c-plane GaN films were grown by ammonia molecular beam epitaxy on metal-organic chemical vapor deposition templates for a wide range of NH{sub 3}:Ga flux ratios and growth temperatures, and the resulting films were characterized using atomic force microscopy, reflection high-energy electron diffraction, and transmission electron microscopy. Three distinct nitrogen-rich growth regimes - unstable layer-by-layer, quasi-stable step flow, and dislocation-mediated pitting - were identified based on the growth mode and film properties. In addition, step flow growth was observed under conditions of gallium droplet accumulation. The results indicate the existence of two regimes for step-flow growth of GaN by ammonia MBE - both gallium-rich and nitrogen-rich. Growth mode instabilities and mound formation were observed and are discussed in the context of a step-edge energy barrier to adatom diffusion over a terrace.

  19. A visualization method for probing grain boundaries of single layer graphene via molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Zhan, Linjie; Wan, Wen; Zhu, Zhenwei; Zhao, Zhijuan; Zhang, Zhenhan; Shih, Tien-Mo; Cai, Weiwei

    2017-07-01

    Graphene, a member of layered two-dimensional (2D) materials, possesses high carrier mobility, mechanical flexibility, and optical transparency, as well as enjoying a wide range of promising applications in electronics. Adopting the chemical vaporization deposition method, the majority of investigators have ubiquitously grown single layer graphene (SLG), which inevitably involves polycrystalline properties. Here we demonstrate a simple method for the direct visualization of arbitrarily large-size SLG domains by synthesizing one-hundred-nm-scale MoS2 single crystals via a high-vacuum molecular beam epitaxy process. The present study based on epitaxial growth provides a guide for probing the grain boundaries of various 2D materials and implements higher potentials for the next-generation electronic devices.

  20. Plasma-Enhanced Chemical Vapor Deposition of SiOx Films Using Electron Beam Generated Plasmas

    DTIC Science & Technology

    2009-09-28

    the films was large (> 130 nm/min), which implied a high porosity for all cases except for low TEOS flow (≤ 2 sccm) at the higher (300 °C) temperature...special relation to the substrate or e-beam. A total flow of 100 sccm was used in all cases . For the gas flows mentioned above, the individual flows...beam generated plasmas. In this case , molecular hydrogen, formed primarily by recombination of atomic hydrogen on system walls, will not be

  1. Ion mass and energy selective hyperthermal ion-beam assisted deposition setup

    NASA Astrophysics Data System (ADS)

    Gerlach, J. W.; Schumacher, P.; Mensing, M.; Rauschenbach, S.; Cermak, I.; Rauschenbach, B.

    2017-06-01

    For the synthesis of high-quality thin films, ion-beam assisted deposition (IBAD) is a frequently used technique providing precise control over several substantial film properties. IBAD typically relies on the use of a broad-beam ion source. Such ion sources suffer from the limitation that they deliver a blend of ions with different ion masses, each of them possessing a certain distribution of kinetic energy. In this paper, a compact experimental setup is presented that enables the separate control of ion mass and ion kinetic energy in the region of hyperthermal energies (few 1 eV - few 100 eV). This ion energy region is of increasing interest not only for ion-assisted film growth but also for the wide field of preparative mass spectrometry. The setup consists of a constricted glow-discharge plasma beam source and a tailor-made, compact quadrupole system equipped with entry and exit ion optics. It is demonstrated that the separation of monoatomic and polyatomic nitrogen ions (N+ and N2+) is accomplished. For both ion species, the kinetic energy is shown to be selectable in the region of hyperthermal energies. At the sample position, ion current densities are found to be in the order of 1 μA/cm2 and the full width at half maximum of the ion beam profile is in the order of 10 mm. Thus, the requirements for homogeneous deposition processes in sufficiently short periods of time are fulfilled. Finally, employing the described setup, for the first time in practice epitaxial GaN films were deposited. This opens up the opportunity to fundamentally study the influence of the simultaneous irradiation with hyperthermal ions on the thin film growth in IBAD processes and to increase the flexibility of the technique.

  2. Development of Ultra Small Shock Tube for High Energy Molecular Beam Source

    SciTech Connect

    Miyoshi, Nobuya; Nagata, Shuhei; Kinefuchi, Ikuya; Shimizu, Kazuya; Matsumoto, Yoichiro; Takagi, Shu

    2008-12-31

    A molecular beam source exploiting a small shock tube is described for potential generation of high energy beam in a range of 1-5 eV without any undesirable impurities. The performance of a non-diaphragm type shock tube with an inner diameter of 2 mm was evaluated by measuring the acceleration and attenuation process of shock waves. With this shock tube installed in a molecular beam source, we measured the time-of-flight distributions of shock-heated beams, which demonstrated the ability of controlling the beam energy with the initial pressure ratio of the shock tube.

  3. Atomistic study of xenon crystal growth via low-temperature atom beam deposition

    NASA Astrophysics Data System (ADS)

    Totò, Nicola; Schön, Christian; Jansen, M.

    2010-09-01

    We studied theoretically the deposition of Xe atoms on a sapphire substrate and the subsequent growth of ordered Xe phases via the low-temperature atom beam deposition method. This chemical synthesis method [D. Fischer and M. Jansen, J. Am. Chem. Soc. 41, 1755 (2002)10.1002/1521-3773(20020517)41:10<1755::AID-ANIE1755>3.0.CO;2-C] is particularly suitable for synthesizing metastable solid compounds. The modeling procedure consisted of several steps, where we used empirical potentials to model the interactions within the substrate, the Xe-Xe interactions in the gas phase and the solid, and the interactions between the Xe atoms and the substrate. In a first step, we established that under the experimental conditions, no Xe clusters formed in the gas phase, and thus the deposition could be described by the adsorption of single Xe atoms on the substrate at low temperatures. Next, we simulated the Xe deposition process and we studied the growth mode depending on various synthesis parameters such as the deposition rate and the temperature of the substrate. Finally, the deposited Xe layers were tempered and the structure of the resulting compound was analyzed. We studied the establishment of locally ordered regions as a function of time, both during the deposition and the tempering. We observed that the final configuration was always crystalline, although defects such as stacking faults and dislocations were likely to form. The occurrence of different growth modes and the formation of defects were explained by studying diffusion and adsorption processes on the surface of both the substrate and the depositing phase.

  4. Understanding the high pressure properties of molecular solids and molecular surfaces deposited on hetrogeneous substrates

    NASA Technical Reports Server (NTRS)

    Etters, R. D.

    1985-01-01

    Work directed toward understanding the high pressure properties of molecular solids and molecular surfaces deposited on hetrogeneous substrates is reported. The motivation, apart from expanding our basic knowledge about these systems, was to understand and predict the properties of new materials synthesized at high pressure, including pressure induced metallic and superconducting states. As a consequence, information about the states of matter of the Jovian planets and their satellites, which are natural high pressure laboratories was also provided. The work on molecular surfaces and finite two and three dimensional clusters of atoms and molecules was connected with the composition and behavior of planetary atmospheres and on the processes involved in forming surface layers, which is vital to the development of composite materials and microcircuitry.

  5. Mechanical properties and thermal stability of TiAlN/Ta multilayer film deposited by ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Shang, Hongfei; Li, Jian; Shao, Tianmin

    2014-08-01

    TiAlN/Ta multilayer film with the total thickness of 2 μm was deposited onto silicon (1 0 0) wafer by ion beam assisted deposition using Ti0.5Al0.5 and Ta as the target materials. Observation of the cross-sectional microstructure and XRD pattern showed that the Ta sub-layer restrained the growth of TiAlN crystal, and decreased the grain size. Nanohardness (H) of the TiAlN/Ta multilayer film was 29% higher and the elastic modulus (E) was 47% higher than that of the TiAlN monolayer film. The critical fracture load (Lc) of 72 mN for the TiAlN/Ta multilayer film was achieved, much higher than that of the monolayer TiAlN film (30 mN), indicated a significant increase of bonding strength. Results of DSC analysis indicated that the TiAlN/Ta multilayer film had the exothermic peak at around 935 °C, 75 °C above that for the TiAlN monolayer film. Existence of the Ta sub-layers behaved as the barrier layers to prevent oxygen from diffusing into inner layers, resulted in the improvement of thermal stability.

  6. Investigations of ice nanoparticles and aerosols in molecular beams

    NASA Astrophysics Data System (ADS)

    Farnik, Michal

    2015-03-01

    We have recently set up a versatile experiment which allows for different experiments with molecular clusters and nanoparticles in molecular beams. Here we concentrate on the experiments with ice nanoparticles (large water clusters (H2O)N, N ~ 102-103) doped with atmospherically relevant molecules, e.g., hydrogen halides, CFCs, nitric acid, NxOy, etc. Such species are relevant to ozone depletion and other atmospheric processes. We investigate (1) the UV-photochemistry using velocity map imaging techniques, and (2) the uptake cross section for the molecules on the ice nanoparticles from velocity measurements. In addition, we record (3) mass spectra of the particles implementing different ionization methods: electron ionization (EI) at variable electron energies, photoionization, and special method of electron photodetachment after Na-doping (NaPI). The unique combination of all these different methods performed with the same nanoparticles provides detailed molecular level information about the studied species and their (photo)physics and chemistry. In particular, an investigation of mixed water-nitric acid particles by means of EI and NaPI revealed the prominent role of the HNO3 molecule as the condensation nuclei. The uptake of atmospheric molecules by ice nanoparticles has been studied, and the pickup cross sections for some molecules exceed significantly the geometrical sizes of the ice nanoparticles. It has been argued that the large particles composed of several hundred water molecules which grow in the supersonic expansions tend to have highly irregular shapes -nanosnowflakes. Photodissociation of hydrogen halides on ice nanoparticles has been investigated, and shown to proceed via excitation of acidically dissociated ion pair and subsequent biradical generation and H3O dissociation. The photodissociation of CF2Cl2 molecules in clusters leads to efficient Cl-fragment caging caused by formation of halogen bond. Grant agency of the Czech Republic, Grant No.: 14

  7. Vacuum Ultraviolet Radiation Desorption of Molecular Contaminants Deposited on Quartz Crystal Microbalances

    NASA Technical Reports Server (NTRS)

    Albyn, Keith; Burns, Dewitt

    2006-01-01

    Recent quartz crystal microbalance measurements made in the Marshall Space Flight Center, Photo-Deposition Facility, for several materials, recorded a significant loss of deposited contaminants when the deposition surface of the microbalance was illuminated by a deuterium lamp. These measurements differ from observations made by other investigators in which the rate of deposition increased significantly when the deposition surface was illuminated with vacuum ultraviolet radiation. These observations suggest that the accelerated deposition of molecular contaminants on optically sensitive surfaces is dependant upon the contaminant being deposited and must be addressed during the materials selection process by common material screening techniques.

  8. Fabrication and characterization of the electrical and optical properties of n-type thin film transparent conducting oxides deposited by neutralized ion beam sputtering and pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Vanderford, John D.

    Transparent conducting oxides have become a fundamental electronic material for numerous current technologies and are optimally deposited as a uniform thin film with low electrical resistivity and high optical transmission. The purpose of this study is to characterize the electrical and optical characteristics of three TCO: Indium Tin Oxide (ITO) (95%, 5%), Zinc Oxide (ZnO), and Aluminum doped Zinc Oxide (AZO) (98%, 2%). The deposition techniques of neutralized ion beam sputtering and pulsed laser deposition will be investigated. ITO will be deposited from commercially available sintered targets whereas ZnO and AZO will be deposited from powder pressed targets. The results have shown that AZO deposit AZO from a powder pressed target with comparable electrical and optical properties to that of ITO deposited from a sintered target.

  9. Atomistic modeling of the low-temperature atom-beam deposition of magnesium fluoride.

    PubMed

    Neelamraju, Sridhar; Schön, Johann Christian; Jansen, Martin

    2015-02-02

    We model the deposition and growth of MgF(2) on a sapphire substrate as it occurs in a low-temperature atom-beam-deposition experiment. In the experiment, an (X-ray) amorphous film of MgF(2) is obtained at low temperatures of 170-180 K, and upon heating, this transforms to the expected rutile phase via the CaCl(2)-type structure. We confirm this from our simulations and propose a mechanism for this transformation. The growth process is analyzed as a function of the synthesis parameters, which include the substrate temperature, deposition rate of clusters, and types of clusters deposited. Upon annealing an initially amorphous deposit, we observe the formation of two competing nanocrystalline modifications during this process, which exhibit the CaCl(2) and CdI(2) structure types, respectively. We argue that this joint growth of the two nanocrystalline polymorphs stabilizes the kinetically unstable CaCl(2)-type structure on the macroscopic level long enough to be observed in the experiment.

  10. Thermal conductivity and nanocrystalline structure of platinum deposited by focused ion beam

    NASA Astrophysics Data System (ADS)

    Alaie, Seyedhamidreza; Goettler, Drew F.; Jiang, Ying-Bing; Abbas, Khawar; Ghasemi Baboly, Mohammadhosein; Anjum, D. H.; Chaieb, S.; Leseman, Zayd C.

    2015-02-01

    Pt deposited by focused ion beam (FIB) is a common material used for attachment of nanosamples, repair of integrated circuits, and synthesis of nanostructures. Despite its common use little information is available on its thermal properties. In this work, Pt deposited by FIB is characterized thermally, structurally, and chemically. Its thermal conductivity is found to be substantially lower than the bulk value of Pt, 7.2 W m-1 K-1 versus 71.6 W m-1 K-1 at room temperature. The low thermal conductivity is attributed to the nanostructure of the material and its chemical composition. Pt deposited by FIB is shown, via aberration corrected TEM, to be a segregated mix of nanocrystalline Pt and amorphous C with Ga and O impurities. Ga impurities mainly reside in the Pt while O is homogeneously distributed throughout. The Ga impurity, small grain size of the Pt, and the amorphous carbon between grains are the cause for the low thermal conductivity of this material. Since Pt deposited by FIB is a common material for affixing samples, this information can be used to assess systematic errors in thermal characterization of different nanosamples. This application is also demonstrated by thermal characterization of two carbon nanofibers and a correction using the reported thermal properties of the Pt deposited by FIB.

  11. Properties and structure of vapor-deposited polyimide upon electron-beam irradiation

    SciTech Connect

    Tsai, F.-Y.; Kuo, Y.-H.; Harding, D.R.

    2006-03-15

    Vapor-deposited polyimide capsules from pyromellitic dianhydride and 4,4{sup '}-oxydianiline were irradiated with an electron beam that mimicked the {beta}-radiation emitted by tritium, a fuel that the capsules are to contain during the inertial confinement fusion process. The mechanical properties and gas permeability of the irradiated capsules were measured to examine their radiation resistance. Upon electron-beam irradiation at an energy of 8 keV and a dose of 120 MGy, the capsules showed 15% and 56% decrease in tensile strength and elongation at break, respectively, without significant change in gas permeability and Young's modulus. Analyses using x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy indicated that the chain cleavage and carbonization occurred but were confined in a thin layer at the top surface of the capsules. The shallow penetration of the low-energy electron beam used, as well as the existence of cross-linking in the vapor-deposited polyimide, may have led to the smaller magnitude of property degradation in the capsules compared to that reported for solution-cast polyimide.

  12. Oxygen Interstitial Defects in Sc2O3 Thin Films Deposited with Reactive Ion Beam Sputtering

    NASA Astrophysics Data System (ADS)

    Schiltz, Drew; Langston, Peter; Krous, Erik; Patel, Dinesh; Markosyan, Ashot; Route, Rodger; Menoni, Carmen; Colorado State University Team; Stanford University Team

    2014-03-01

    Numerous defects may develop when depositing amorphous thin films with reactive ion beam sputtering, including interstitials and vacancies. In many cases, these defects limit the functionality of the film, degrading both the mechanical and optical properties. This study aims to investigate the nature of oxygen interstitial point defects in scandium oxide thin films and characterize the effect on composition, optical absorption and mechanical stress. The films are deposited with argon ion beam sputtering of a scandium metal target. The density of defects is correlated with the oxygen partial pressure, revealing an optimal condition where defects are minimized. Furthermore, the defect density also demonstrates a direct correlation with the main ion beam accelerating voltage. The native oxygen defects behave as shallow levels, with binding energies in the 1-2 eV range. Work supported by the DoD Office of Naval Research and the High Energy Laser Program of the DoD Joint Technology Office. National Science Foundation Engineering Research Center for Extreme Ultraviolet Science and Technology, Department of Electrical and Computer Engineering, Colorado State University, Fort Collins, CO 80523, USA.

  13. Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure

    SciTech Connect

    Coelho, S. M. M.; Auret, F. D.; Janse van Rensburg, P. J.; Nel, J. M.

    2013-11-07

    Schottky barrier diodes prepared by electron beam deposition (EBD) on Sb-doped n-type Ge were characterized using deep level transient spectroscopy (DLTS). Pt EBD diodes manufactured with forming gas in the chamber had two defects, E{sub 0.28} and E{sub 0.31}, which were not previously observed after EBD. By shielding the samples mechanically during EBD, superior diodes were produced with no measureable deep levels, establishing that energetic ions created in the electron beam path were responsible for the majority of defects observed in the unshielded sample. Ge samples that were first exposed to the conditions of EBD, without metal deposition (called electron beam exposure herein), introduced a number of new defects not seen after EBD with only the E-center being common to both processes. Substantial differences were noted when these DLTS spectra were compared to those obtained using diodes irradiated by MeV electrons or alpha particles indicating that very different defect creation mechanisms are at play when too little energy is available to form Frenkel pairs. These observations suggest that when EBD ions and energetic particles collide with the sample surface, inducing intrinsic non-localised lattice excitations, they modify defects deeper in the semiconductor thus rendering them observable.

  14. Characterization and performance of carbon films deposited by plasma and ion beam based techniques

    SciTech Connect

    Walter, K C; Kung, H; Levine, T

    1994-12-31

    Plasma and ion beam based techniques have been used to deposit carbon-based films. The ion beam based method, a cathodic arc process, used a magnetically mass analyzed beam and is inherently a line-of-sight process. Two hydrocarbon plasma-based, non-line-of-sight techniques were also used and have the advantage of being capable of coating complicated geometries. The self-bias technique can produce hard carbon films, but is dependent on rf power and the surface area of the target. The pulsed-bias technique can also produce hard carbon films but has the additional advantage of being independent of rf power and target surface area. Tribological results indicated the coefficient of friction is nearly the same for carbon films from each deposition process, but the wear rate of the cathodic arc film was five times less than for the self-bias or pulsed-bias films. Although the cathodic arc film was the hardest, contained the highest fraction of sp{sup 3} bonds and exhibited the lowest wear rate, the cathodic arc film also produced the highest wear on the 440C stainless steel counterface during tribological testing. Thus, for tribological applications requiring low wear rates for both counterfaces, coating one surface with a very hard, wear resistant film may detrimentally affect the tribological behavior of the counterface.

  15. Electron-beam-assisted oxygen purification at low temperatures for electron-beam-induced pt deposits: towards pure and high-fidelity nanostructures.

    PubMed

    Plank, Harald; Noh, Joo Hyon; Fowlkes, Jason D; Lester, Kevin; Lewis, Brett B; Rack, Philip D

    2014-01-22

    Nanoscale metal deposits written directly by electron-beam-induced deposition, or EBID, are typically contaminated because of the incomplete removal of the original organometallic precursor. This has greatly limited the applicability of EBID materials synthesis, constraining the otherwise powerful direct-write synthesis paradigm. We demonstrate a low-temperature purification method in which platinum-carbon nanostructures deposited from MeCpPtIVMe3 are purified by the presence of oxygen gas during a post-electron exposure treatment. Deposit thickness, oxygen pressure, and oxygen temperature studies suggest that the dominant mechanism is the electron-stimulated reaction of oxygen molecules adsorbed at the defective deposit surface. Notably, pure platinum deposits with low resistivity and retain the original deposit fidelity were accomplished at an oxygen temperature of only 50 °C.

  16. Properties and applications of cobalt-based material produced by electron-beam-induced deposition

    NASA Astrophysics Data System (ADS)

    Lau, Y. M.; Chee, P. C.; Thong, J. T. L.; Ng, V.

    2002-07-01

    The deposition of cobalt-containing material from dicobalt octacarbonyl using a focused electron beam is reported. The material contains between 30% and 50% (atomic) cobalt, with the balance being carbon and oxygen, and comprises nanocrystalline metallic grains embedded in a carbonaceous matrix. Arches bridging two electrodes were fabricated to allow current-voltage (I-V) measurements to be conducted. The material resistivity decreases strongly with the deposition beam current, with values as low as 45 mu][Omega cm being attainable. Material growth by indirect irradiation is found to give rise to material of high resistivity and can result in highly resistive arches. At low temperatures, three distinctive conduction regimes are observed, with the I-V characteristics flattening out at the origin. At 20 K step-like features suggestive of Coulomb- blockade effects were observed. Magnetic force microscope (MFM) images of the material indicates that it is ferromagnetic in nature. The application of the technique and material to fabricate MFM tips is demonstrated. The use of selective material deposits as catalyst sites for the growth of carbon nanotubes is also demonstrated. copyright 2002 American Vacuum Society.

  17. 2D surface optical lattice formed by plasmon polaritons with application to nanometer-scale molecular deposition.

    PubMed

    Yin, Yanning; Xu, Supeng; Li, Tao; Yin, Yaling; Xia, Yong; Yin, Jianping

    2017-08-10

    Surface plasmon polaritons, due to their tight spatial confinement and high local intensity, hold great promises in nanofabrication which is beyond the diffraction limit of conventional lithography. Here, we demonstrate theoretically the 2D surface optical lattices based on the surface plasmon polariton interference field, and the potential application to nanometer-scale molecular deposition. We present the different topologies of lattices generated by simple configurations on the substrate. By explicit theoretical derivations, we explain their formation and characteristics including field distribution, periodicity and phase dependence. We conclude that the topologies can not only possess a high stability, but also be dynamically manipulated via changing the polarization of the excitation laser. Nanometer-scale molecular deposition is simulated with these 2D lattices and discussed for improving the deposition resolution. The periodic lattice point with a width resolution of 33.2 nm can be obtained when the fullerene molecular beam is well-collimated. Our study can offer a superior alternative method to fabricate the spatially complicated 2D nanostructures, with the deposition array pitch serving as a reference standard for accurate and traceable metrology of the SI length standard.

  18. Controlled growth of few-layer hexagonal boron nitride on copper foils using ion beam sputtering deposition.

    PubMed

    Wang, Haolin; Zhang, Xingwang; Meng, Junhua; Yin, Zhigang; Liu, Xin; Zhao, Yajuan; Zhang, Liuqi

    2015-04-01

    Ion beam sputtering deposition (IBSD) is used to synthesize high quality few-layer hexagonal boron nitride (h-BN) on copper foils. Compared to the conventional chemical vapor deposition, the IBSD technique avoids the use of unconventional precursors and is much easier to control, which should be very useful for the large-scale production of h-BN in the future.

  19. Geometry of Chemical Beam Vapor Deposition System for Efficient Combinatorial Investigations of Thin Oxide Films: Deposited Film Properties versus Precursor Flow Simulations.

    PubMed

    Wagner, Estelle; Sandu, Cosmin S; Harada, Scott; Pellodi, Cedric; Jobin, Marc; Muralt, Paul; Benvenuti, Giacomo

    2016-03-14

    An innovative deposition system has been developed to construct complex material thin films from single-element precursors by chemical beam vapor deposition (CBVD). It relies on well distributed punctual sources that emit individually controlled precursor beams toward the substrate under high vacuum conditions combined with well designed cryo-panel surfaces that avoid secondary precursor sources. In this configuration the impinging flows of all precursors can be calculated at any substrate point considering the controlled angular distribution of the emitted beams and the ballistic trajectory of the molecules. The flow simulation is described in details. The major advantage of the deposition system is its ability to switch between several possible controlled combinatorial configurations, in which the substrate is exposed to a wide range of flow compositions from the different precursors, and a uniform configuration, in which the substrate is exposed to a homogeneous flow, even on large substrates, with high precursor use efficiency. Agreement between calculations and depositions carried out in various system configurations and for single, binary, or ternary oxides in mass transfer limited regime confirms that the distribution of incoming precursors on the substrate follows the theoretical models. Additionally, for some selected precursors and in some selected conditions, almost 100% of the precursor impinging on the substrate is incorporated to the deposit. The results of this work confirm the potentialities of CBVD both as a research tool to investigate efficiently deposition processes and as a fabrication tool to deposit on large surfaces.

  20. Modulated molecular beam scattering of disilane on silicon

    NASA Astrophysics Data System (ADS)

    Kulkarni, S. K.; Gates, S. M.; Scott, B. A.; Sawin, H. H.

    1990-12-01

    Decomposition and scattering of disilane on Si(111) has been studied by modulated molecular beam spectrometry over the temperature range of 50-850°C and with beam fluxes from 10 15-10 16 cm -2 s -1. Disilane exhibits a surface residence time as an intact molecule of ˜ 50 micros at room temperature, which we attribute to a molecular precursor (physisorbed) state. The residence time decreases with increasing temperature and cannot be experimentally observed (< 20 micros) above 250 ° C. The reactive sticking coefficient increases with surface temperature ( Ts) from 0% at room temperature on a surface passivated with SiH x species (no reactivity) to 30% at 850 °C. Rapid evolution of monosilane occurs for Ts > 500 °C. Unusually slow desorption of H 2 is observed (time constant ˜ 1 s) at temperatures as high as 850 ° C. The rate of hydrogen evolution increases with the incident disilane flux and the substrate temperature. A model is used to fit the experimental data. The model is based on a surface reaction mechanism developed in the next paper (S.K. Kulkarni et al., Surf. Sci. 239 (1990) 26, ref. [1]). According to this model, adsorbed disilane decomposes producing SiH 4 and chemisorbed SiH. The SiH migrates to active sites on the surface where hydrogen is produced by a second-order mechanism which has an activation energy of about 20 kcal/mol. Si film growth rates are predicted from the proposed model and these agree reasonably well with experimental growth rate data in the literature. The main channel of Si growth from Si 2H 6 at high T s (500-900 °C) is predicted to be by decomposition of disilane emitting SiH 4 and chemisorbing SiH 2, which rapidly decomposes to SiH . The chemisorbed SiH can react with incident disilane emitting SiH 4. This process is more active at H removal from the surface than is the recombination of 2 SiH to desorb H 2. Both SiH species and bare Si sites are proposed to be active sites for Si 2H 6 decomposition.

  1. Intense laser-driven proton beam energy deposition in compressed and uncompressed Cu foam

    NASA Astrophysics Data System (ADS)

    McGuffey, Christopher; Krauland, C. M.; Kim, J.; Beg, F. N.; Wei, M. S.; Habara, H.; Noma, S.; Ohtsuki, T.; Tsujii, A.; Yahata, K.; Yoshida, Y.; Uematsu, Y.; Nakaguchi, S.; Morace, A.; Yogo, A.; Nagatomo, H.; Tanaka, K.; Arikawa, Y.; Fujioka, S.; Shiraga, H.

    2016-10-01

    We investigated transport of intense proton beams from a petawatt laser in uncompressed or compressed Cu foam. The LFEX laser (1 kJ on target, 1.5 ps, 1053 nm, I >2×1019 W/cm2) irradiated a curved C foil to generate the protons. The foil was in an open cone 500 μm from the tip where the focused proton beam source was delivered to either of two Cu foam sample types: an uncompressed cylinder (1 mm L, 250 µm ϕ) , and a plastic-coated sphere (250 µm ϕ) that was first driven by GXII (9 beams, 330 J/beam, 1.3 ns, 527 nm) to achieve similar ρϕ to the cylinder sample's ρL as predicted by 2D radiation hydrodynamic simulations. Using magnetic spectrometers and a Thomson parabola, the proton spectra were measured with and without the Cu samples. When included, they were observed using Cu K-shell x-ray imaging and spectroscopy. This paper will present comparison of the experimentally measured Cu emission shape and proton spectrum changes due to deposition in the Cu with particle-in-cell simulations incorporating new stopping models. This work was made possible by laser time Awarded by the Japanese NIFS collaboration NIFS16KUGK107 and performed under the auspices of the US AFOSR YIP Award FA9550-14-1-0346.

  2. Review of magnetic nanostructures grown by focused electron beam induced deposition (FEBID)

    NASA Astrophysics Data System (ADS)

    De Teresa, J. M.; Fernández-Pacheco, A.; Córdoba, R.; Serrano-Ramón, L.; Sangiao, S.; Ibarra, M. R.

    2016-06-01

    We review the current status of the use of focused electron beam induced deposition (FEBID) for the growth of magnetic nanostructures. This technique relies on the local dissociation of a precursor gas by means of an electron beam. The most promising results have been obtained using the Co2(CO)8 precursor, where the Co content in the grown nanodeposited material can be tailored up to more than 95 at.%. Functional behaviour of these Co nanodeposits has been observed in applications such as arrays of magnetic dots for information storage and catalytic growth, magnetic tips for scanning probe microscopes, nano-Hall sensors for bead detection, nano-actuated magnetomechanical systems and nanowires for domain-wall manipulation. The review also covers interesting results observed in Fe-based and alloyed nanodeposits. Advantages and disadvantages of FEBID for the growth of magnetic nanostructures are discussed in the article as well as possible future directions in this field.

  3. Growth of [010] oriented {alpha}-MoO{sub 3} nanorods by pulsed electron beam deposition

    SciTech Connect

    Liu Can; Li Zhengcao; Zhang Zhengjun

    2011-11-28

    Arrays of vertically aligned, [010] oriented {alpha}-MoO{sub 3} nanorods were grown on planar silicon substrates by pulsed electron beam deposition. The morphology and structure of the nanorods as well as their growth mechanism were investigated. These [010] oriented nanorods exhibited a good field emission performance with a turn-on field of 3.6 V/{mu}m. As the space between layers of the [010] oriented nanorods is large, their formation may be also meaningful for exploring the gas sensing and energy storage properties of layered oxides like {alpha}-MoO{sub 3}.

  4. Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition

    SciTech Connect

    Wang, Yuhan; Comes, Ryan B.; Kittiwatanakul, Salinporn; Wolf, Stuart A.; Lu, Jiwei

    2015-03-01

    Epitaxial NbO2 thin films were synthesized on Al2O3 (0001) substrates via reactive bias target ion beam deposition. X-ray diffraction and Raman spectra were used to confirm the tetragonal phase of pure NbO2. Through XPS, it was found that there was a ~ 1.3 nm thick Nb2O5 layer on the surface and the bulk of the thin film was NbO2. The epitaxial relationship between NbO2 film and substrate was determined. Electrical transport measurement as a function of temperature showed that the conduction mechanism could be described by variable range hopping mechanism.

  5. Ion-Beam Deposition of Nb and Ta Refractory Superconducting Films,

    DTIC Science & Technology

    1982-01-01

    physical separation of the deposition substrate from the plasma t5 and high energy particles. Photoresist processing is one such advantage.5 Refractory...grid current to 13 mA and the plasma discharge voltage (a lesser value for Xe) produced the highest T Nb films at c a given beam power. This...Electron Dev. ED-27, 1998 (1980). 10.) E. I. Alessandrini, R. B. Laibowitz, and J. M. Viggiano , J. Vac. Sci. Technol. 18, 318 (1981). 11.) W. E. J. Neal

  6. Fabrication of nickel nanocontacts using nanostencils and electron beam assisted SiO2 deposition.

    PubMed

    Langford, R M; Wang, T X

    2006-08-01

    Nickel nanocontacts for studying ballistic magnetoresistance have been fabricated by sputtering through FIB prepared nanostencil masks and by using electron beam assisted deposition of SiO2 to reduce the size of FIB milled pores through silicon nitride membranes. These two methods are discussed in terms of the nanocontact sizes, fabrication, and yield. The smallest size of the nanocontacts prepared using the nanostencil method was 40 nm and by the filling method was 1-2 nm. The maximum magnetoresistance measured was 1% and no evidence of a large ballistic magnetoresistance was observed.

  7. Granular Co-C nano-Hall sensors by focused-beam-induced deposition.

    PubMed

    Gabureac, Mihai; Bernau, Laurent; Utke, Ivo; Boero, Giovanni

    2010-03-19

    We investigated the performance of Hall sensors with different Co-C ratios, deposited directly in nanostructured form, using Co(2)(CO)(8) gas molecules, by focused-electron or ion-beam-induced deposition. Due to the enhanced intergrain scattering in these granular wires, the extraordinary Hall effect can be increased by two orders of magnitude with respect to pure Co, up to a magnetic field sensitivity of 1 Omega T(-1). We show that the best magnetic field resolution at room temperature is obtained for Co ratios between 60% and 70% and is better than 1 microT Hz(-1/2). For an active area of the sensor of 200 x 200 nm(2), the room temperature magnetic flux resolution is phi(min) = 2 x 10(-5)phi(0) in the thermal noise frequency range, i.e. above 100 kHz.

  8. Fundamental tribological properties of ion-beam-deposited boron nitride films

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1989-01-01

    The adhesion, friction, and micromechanical properties of ion-beam-deposited boron nitride (BN) films are reviewed. The BN films are examined in contact with BN metals and other harder materials. For simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. First, the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces are discussed. The effects of surface films, hardness of metals, and temperature on tribological response with respect to adhesion and friction are considered. The second part deals with the abrasion of the BN films. Elastic, plastic, and fracture behavior of the BN films in solid-state contact are discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of BN films deposited on substrates is also addressed.

  9. Fluoride antireflection coatings for deep ultraviolet optics deposited by ion-beam sputtering.

    PubMed

    Yoshida, Toshiya; Nishimoto, Keiji; Sekine, Keiichi; Etoh, Kazuyuki

    2006-03-01

    Optically high quality coatings of fluoride materials are required in deep ultraviolet (DUV) lithography. We have applied ion-beam sputtering (IBS) to obtain fluoride films with smooth surfaces. The extinction coefficients were of the order of 10(-4) at the wavelength of 193 nm due to the reduction of their absorption loss. The transmittance of the MgF2/GdF3 antireflection coating was as high as 99.7% at the wavelength of 193 nm. The surfaces of the IBS deposited films were so smooth that the surface roughness of the A1F3/GdF3 film was comparable with that of the CaF2 substrate. The MgF2/GdF3 coating fulfilled the temperature and humidity requirements of military specification. Thus, the IBS deposited fluoride films are promising candidate for use in the DUV lithography optics.

  10. Study And Comparison Of Silver Mirrors Deposited On Different Substrates By Electron-Beam Gun Method

    SciTech Connect

    Asl, Jahanbakhsh Mashaiekhy; Shafieizadeh, Zahra; Sabbaghzadeh, Jamshid; Anaraki, Mahdi

    2010-12-23

    Choosing the right substrate is one of the important factors for improving quality parameters of thin films such as adhesion between layers and substrates. The selected substrate should have proper physical and chemical compatibility with deposited thin film. In this paper, we have been investigated four different types of high reflective laser mirrors that were produced in similar conditions on four different kinds of substrates including copper, stainless steel, brass, and nickel. We used electron-beam gun method for deposition of silver layers. At the end we compared theoretical results with practical results that were yielded by laser damage threshold test. It was shown that brass is the best choice for silver metal mirrors as a substrate.

  11. Fundamental tribological properties of ion-beam-deposited boron nitride films

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.

    1990-01-01

    The adhesion, friction, and micromechanical properties of ion-beam-deposited boron nitride (BN) films are reviewed. The BN films are examined in contact with BN metals and other harder materials. For simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. First, the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces are discussed. The effects of surface films, hardness of metals, and temperature on tribological response with respect to adhesion and friction are considered. The second part deals with the abrasion of the BN films. Elastic, plastic, and fracture behavior of the BN films in solid-state contact are discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of BN films deposited on substrates is also addressed.

  12. Nanomanufacturing of titania interfaces with controlled structural and functional properties by supersonic cluster beam deposition

    SciTech Connect

    Podestà, Alessandro E-mail: pmilani@mi.infn.it; Borghi, Francesca; Indrieri, Marco; Bovio, Simone; Piazzoni, Claudio; Milani, Paolo E-mail: pmilani@mi.infn.it

    2015-12-21

    Great emphasis is placed on the development of integrated approaches for the synthesis and the characterization of ad hoc nanostructured platforms, to be used as templates with controlled morphology and chemical properties for the investigation of specific phenomena of great relevance in interdisciplinary fields such as biotechnology, medicine, and advanced materials. Here, we discuss the crucial role and the advantages of thin film deposition strategies based on cluster-assembling from supersonic cluster beams. We select cluster-assembled nanostructured titania (ns-TiO{sub 2}) as a case study to demonstrate that accurate control over morphological parameters can be routinely achieved, and consequently, over several relevant interfacial properties and phenomena, like surface charging in a liquid electrolyte, and proteins and nanoparticles adsorption. In particular, we show that the very good control of nanoscale morphology is obtained by taking advantage of simple scaling laws governing the ballistic deposition regime of low-energy, mass-dispersed clusters with reduced surface mobility.

  13. Ionized cluster beam deposition and epitaxy of metal films on large lattice misfit substrates

    NASA Astrophysics Data System (ADS)

    Yamada, Isao

    1991-01-01

    This paper reviews the metal film formation by the ionized cluster beam (ICB) technique on various kinds of substrates. The ICB enables heteroepitaxy of metal films for lattice misfit larger than 25 percent. The film growth process was studied by in situ MEED, AES and XPS analyses. The films were also examined by ex situ electron diffraction and atomic resolution TEM. On Si(111), single crystal Al film was formed. The Al deposited on Si(100) formed a bicrystal structure. The film-substrate interface and the bicrystal grain boundary were very sharp and had little distortion of atomic arrangement. This explains the high thermal stability of the metal films deposited by ICB. Epitaxial Al films were also formed on CaF2, Ge, GaAs, and sapphire substrates.

  14. Fundamental tribological properties of ion-beam-deposited boron nitride films

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.

    1990-01-01

    The adhesion, friction, and micromechanical properties of ion-beam-deposited boron nitride (BN) films are reviewed. The BN films are examined in contact with BN metals and other harder materials. For simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. First, the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces are discussed. The effects of surface films, hardness of metals, and temperature on tribological response with respect to adhesion and friction are considered. The second part deals with the abrasion of the BN films. Elastic, plastic, and fracture behavior of the BN films in solid-state contact are discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of BN films deposited on substrates is also addressed.

  15. Investigations of LBMO thin films deposited on different substrates by electron beam evaporation

    NASA Astrophysics Data System (ADS)

    Seshendra Reddy, Ch.; Ashoka Reddy, Ch.; Sivasankar Reddy, A.; Sreedhara Reddy, P.

    2016-04-01

    La0.7Ba0.3MnO3 (LBMO) thin films were prepared on different substrates such as Si, MgO, and c-ZrO2 substrates at substrate temperature 1023 K using electron beam evaporation technique for first time. Through optimizing the preparation condition, the better film uniformity of thickness, composition, and temperature was achieved. To find the influence of substrates, we studied the structural, compositional, morphological, and electrical properties of LBMO thin films. All the LBMO films exhibited a single phase and good crystallinity with no impurity phases. Films deposited on MgO have high temperature coefficient of resistance (TCR) value with low transition temperature (245 K). Better TCR (4.09 %/K) value at room temperature is observed in LBMO films deposited on Si substrate.

  16. Nanomanufacturing of titania interfaces with controlled structural and functional properties by supersonic cluster beam deposition

    NASA Astrophysics Data System (ADS)

    Podestà, Alessandro; Borghi, Francesca; Indrieri, Marco; Bovio, Simone; Piazzoni, Claudio; Milani, Paolo

    2015-12-01

    Great emphasis is placed on the development of integrated approaches for the synthesis and the characterization of ad hoc nanostructured platforms, to be used as templates with controlled morphology and chemical properties for the investigation of specific phenomena of great relevance in interdisciplinary fields such as biotechnology, medicine, and advanced materials. Here, we discuss the crucial role and the advantages of thin film deposition strategies based on cluster-assembling from supersonic cluster beams. We select cluster-assembled nanostructured titania (ns-TiO2) as a case study to demonstrate that accurate control over morphological parameters can be routinely achieved, and consequently, over several relevant interfacial properties and phenomena, like surface charging in a liquid electrolyte, and proteins and nanoparticles adsorption. In particular, we show that the very good control of nanoscale morphology is obtained by taking advantage of simple scaling laws governing the ballistic deposition regime of low-energy, mass-dispersed clusters with reduced surface mobility.

  17. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices

    NASA Astrophysics Data System (ADS)

    Batra, Nitin M.; Patole, Shashikant P.; Abdelkader, Ahmed; Anjum, Dalaver H.; Deepak, Francis L.; Costa, Pedro M. F. J.

    2015-11-01

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode-interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode-nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  18. Topological insulator film growth by molecular beam epitaxy: A review

    SciTech Connect

    Ginley, Theresa P.; Wang, Yong; Law, Stephanie

    2016-11-23

    In this article, we will review recent progress in the growth of topological insulator (TI) thin films by molecular beam epitaxy (MBE). The materials we focus on are the V2-VI3 family of TIs. These materials are ideally bulk insulating with surface states housing Dirac excitations which are spin-momentum locked. These surface states are interesting for fundamental physics studies (such as the search for Majorana fermions) as well as applications in spintronics and other fields. However, the majority of TI films and bulk crystals exhibit significant bulk conductivity, which obscures these states. In addition, many TI films have a high defect density. This review will discuss progress in reducing the bulk conductivity while increasing the crystal quality. We will describe in detail how growth parameters, substrate choice, and growth technique influence the resulting TI film properties for binary and ternary TIs. We then give an overview of progress in the growth of TI heterostructures. Furthermore, we close by discussing the bright future for TI film growth by MBE.

  19. Topological insulator film growth by molecular beam epitaxy: A review

    DOE PAGES

    Ginley, Theresa P.; Wang, Yong; Law, Stephanie

    2016-11-23

    In this article, we will review recent progress in the growth of topological insulator (TI) thin films by molecular beam epitaxy (MBE). The materials we focus on are the V2-VI3 family of TIs. These materials are ideally bulk insulating with surface states housing Dirac excitations which are spin-momentum locked. These surface states are interesting for fundamental physics studies (such as the search for Majorana fermions) as well as applications in spintronics and other fields. However, the majority of TI films and bulk crystals exhibit significant bulk conductivity, which obscures these states. In addition, many TI films have a high defectmore » density. This review will discuss progress in reducing the bulk conductivity while increasing the crystal quality. We will describe in detail how growth parameters, substrate choice, and growth technique influence the resulting TI film properties for binary and ternary TIs. We then give an overview of progress in the growth of TI heterostructures. Furthermore, we close by discussing the bright future for TI film growth by MBE.« less

  20. Growth of Atomically Flat DBCO Films Using Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Andrus, Aaron E.; Oh, Seongshik; Davidson, Bruce A.; O'Donnell, Jim; Eckstein, James N.

    2000-03-01

    We have grown atomically flat a-axis dysprosium barium copper oxide (DBCO) films by molecular beam epitaxy (MBE) using a pure ozone source. Such films can be used, for example, to exploit the inherent anisotropy of DBCO in spin injection devices using ferromagnetic polarized electron sources or all-superconducting Josephson junctions. The a-axis films are grown on a strontium titanate (STO) substrate using a low temperature DBCO template to achieve a-axis orientation. During growth, we use reflection high energy electron diffraction (RHEED) to observe the emergence of one-third order streaks in the diffraction pattern and a reduction in the surface roughness as we increase the growth temperature. Subsequent x-ray diffraction shows complete a-axis normal orientation with pseudomorphic growth (in-plane lattice constants identical to the substrate) and a slightly larger out of plane lattice constant than bulk crystals. Atomic force microscopy (AFM) shows an RMS roughness of 4 Å over several millimeters of the film surface, sufficient to construct tunnel junction devices.

  1. Molecular beam epitaxial growth of tin oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Medina, Gabriel A.

    In an effort to develop a method to utilize SnO in transparent electronic and optoelectronic applications, the molecular beam epitaxy method was used to grow a thin film SnO sample. Five samples were grown and studied using various conventional techniques. X-ray diffraction and Raman spectroscopy was used to identify the composition of the samples. The quality and thickness of the samples was studied using Scanning Electron Microscopy. This data was used to determine which samples were successful growths of SnO and how the growth conditions of each may have affected the outcomes. From the compiled data, single phase SnO was identified and selected for further study of it electrical properties. Previous studies have not been able to accurately identify the band gap energy of SnO due to its instability as an oxide. A bandgap energy of 2.56 eV was determined by photoluminescence analysis. This is consistent with reported estimates of between 2.5 to 3 eV for SnO.

  2. Molecular beam, mass spectrometric sampling in hazardous waste destruction

    SciTech Connect

    Nimlos, M.R.; Milne, T.A.; McKinnon, J.T.

    1995-03-01

    This paper describes the study of the destruction of hazardous waste in which compounds and conditions are screened and byproducts are detected with a molecular beam, mass spectrometer (MBMS). Three destruction techniques were investigated as potential solar-driven processes: catalytic steam reforming, photothermal oxidation, and photocatalytic oxidation. These processes were investigated using an MBMS-equipped with a triple quadrupole mass spectrometer. The MS/MS capabilities of this instrument were used to characterize products using daughter and parent ion scanning modes. With catalytic steam reforming, a number of chlorinated and nonchlorinated compounds were screened for their susceptibility to destruction using a rhodium catalyst. The destruction efficiencies were high at modest temperatures (700-900{degrees}C) and few byproducts were measured. Choloronaphthalene was studied as a model compound for the photothermal oxidation processes. An enhancement in the destruction rate in air was measured by adding near UV light (300-340 nm). Byproducts were measured and the identities of these products were determined using daughter ion MS/MS spectrometry. The gas-phase photocatalytic oxidation of trichloroethylene (TCE) was measured at ambient temperatures using the MBMS. The identity of these byproducts was determined using parent ion MS/MS spectrometry.

  3. Resistance repeatability study of ion-beam deposited vanadium oxide thin films

    NASA Astrophysics Data System (ADS)

    Alvarez, P.; Pearson, D. I. C.; Pochon, S.; Thomas, O.; Cooke, M.; Gunn, R.

    2016-09-01

    Ion Beam Sputter Deposition (IBSD) is a versatile technique particularly suited to applications requiring high quality, high performance layer materials as it allows independent and accurate control of the process parameters. Vanadium oxides, used for example in the fabrication of microbolometers, optical switches or optical storage, exhibit interesting properties such as a high Temperature Coefficient of Resistance (TCR), relatively low 1/f noise and a semiconductormetal phase transition close to room temperature. However, it is very challenging to control the stoichiometry of the deposited film as there are at least 25 different oxidation states of vanadium, few of which display the required electrical characteristics. In the present study, vanadium oxide thin layers were deposited by IBSD using an Oxford Ionfab300+ and analyzed with regard to their electrical properties. The impact of the system parameters on the resistance repeatability, wafer-to-wafer and batch-to-batch, was thoroughly investigated to provide the end user with a clear understanding of the factors affecting film resistivity while ensuring at the same time a steep variation of resistance with temperature, as notably required for uncooled bolometers. These parameters were balanced to also achieve a good deposition rate, throughput and uniformity over large device areas, compatible with the requirements of industrial applications.

  4. 'Soft' Au, Pt and Cu contacts for molecular junctions through surface-diffusion-mediated deposition.

    PubMed

    Bonifas, Andrew P; McCreery, Richard L

    2010-08-01

    Virtually all types of molecular electronic devices depend on electronically addressing a molecule or molecular layer through the formation of a metallic contact. The introduction of molecular devices into integrated circuits will probably depend on the formation of contacts using a vapour deposition technique, but this approach frequently results in the metal atoms penetrating or damaging the molecular layer. Here, we report a method of forming 'soft' metallic contacts on molecular layers through surface-diffusion-mediated deposition, in which the metal atoms are deposited remotely and then diffuse onto the molecular layer, thus eliminating the problems of penetration and damage. Molecular junctions fabricated by this method exhibit excellent yield (typically >90%) and reproducibility, and allow examination of the effects of molecular-layer structure, thickness and contact work function.

  5. Synthesis of nanowires via helium and neon focused ion beam induced deposition with the gas field ion microscope.

    PubMed

    Wu, H M; Stern, L A; Chen, J H; Huth, M; Schwalb, C H; Winhold, M; Porrati, F; Gonzalez, C M; Timilsina, R; Rack, P D

    2013-05-03

    The ion beam induced nanoscale synthesis of platinum nanowires using the trimethyl (methylcyclopentadienyl)platinum(IV) (MeCpPt(IV)Me3) precursor is investigated using helium and neon ion beams in the gas field ion microscope. The He(+) beam induced deposition resembles material deposited by electron beam induced deposition with very small platinum nanocrystallites suspended in a carbonaceous matrix. The He(+) deposited material composition was estimated to be 16% Pt in a matrix of amorphous carbon with a large room-temperature resistivity (∼3.5 × 10(4)-2.2 × 10(5) μΩ cm) and temperature-dependent transport behavior consistent with a granular material in the weak intergrain tunnel coupling regime. The Ne(+) deposited material has comparable composition (17%), however a much lower room-temperature resistivity (∼600-3.0 × 10(3) μΩ cm) and temperature-dependent electrical behavior representative of strong intergrain coupling. The Ne(+) deposited nanostructure has larger platinum nanoparticles and is rationalized via Monte Carlo ion-solid simulations which show that the neon energy density deposited during growth is much larger due to the smaller ion range and is dominated by nuclear stopping relative to helium which has a larger range and is dominated by electronic stopping.

  6. Laser beam soldering of fine-pitch technology packages with solid solder deposits

    NASA Astrophysics Data System (ADS)

    Pucher, Hans-Joerg; Glasmacher, Mathias; Geiger, Manfred

    1996-04-01

    Micro electronics is a key technology attracting the attention of information, communication, automation and data processing technologies. Ongoing miniaturization combined with an increasing number of I/Os has inevitably lead to ever finer lead geometries. Therefore the demands put upon the surface mount technology are increasing continuously. Processing of high lead count fine pitch packages, for example those which are applied in high-capacity computers, has not increased the demands put upon the assembly process only, but also on the connecting techniques. By reflow soldering with laser beam radiation the benefits from the tool `laser beam' are used extensively, for example contact and force free processing, strictly localized heating and the good controllability thereof, formation of fine crystalline and homogeneous structures, etc. Within the scope of this paper the fundamentals of laser beam soldering are discussed for fine pitch lead frames (pitch 300 micrometers ) for plastic packages, made by a modified CuFe2P alloy with a 5 micrometers Sn90Pb plating, on solid solder depths (Sn63Pb) performed by the so called High-Pad process. These investigations are unique in the field of laser beam soldering and are carried out by means of a Nd:YAG-laser. A pyrometer is used for detection of the emission of the temperature radiation of the joining area for process control. The additional use of a high-speed camera gives a detailed description of the melting and wetting process. The influence of laser beam parameters and the volume of the solid solder deposits on the joining result are presented.

  7. Raman spectroscopic study of surfactant-mediated molecular beam epitaxially grown germanium/silicon

    NASA Astrophysics Data System (ADS)

    Brill, Gregory Nelson

    The epitaxial growth of Ge on Si substrates was carried out using surfactant-mediated epitaxy and standard growth procedures to study the effects of Si surface passivation prior to Ge nucleation. The growth experiments were conducted in a molecular beam epitaxy (MBE) chamber equipped with reflection high-energy electron diffraction (RHEED) to monitor the nucleation process. Arsenic was chosen as the surfactant material and Ge nucleation was conducted on both Si(001) and Si(211) orientated substrates. Post-growth experiments were conducted primarily utilizing Raman Spectroscopy, however scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction were also employed to gather information about the grown material. From these experiments, it was determined that passivating the Si surface prior to Ge deposition with a monolayer of As yields higher quality 2-dimensional material. Additionally, As acts as a suppressant to Ge - Si intermixing resulting in a highly ordered epilayer/substrate interface. If Ge is deposited directly on a clean Si substrate without As passivation, the resultant growth follows the theoretically predicted Stranski-Krastanov growth mode. A growth model is suggested that successfully describes the differences between surfactant-mediated and non-surfactant-mediated nucleation through a site-exchange mechanism between Ge and As atoms. Additionally, surfactant-mediated nucleation results as a function of substrate orientation are highlighted and a model for surface reconstruction of the As passivated Si(211) surface is proposed.

  8. Growth of uniform CaGe2 films by alternating layer molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Xu, Jinsong; Katoch, Jyoti; Ahmed, Adam S.; Pinchuk, Igor V.; Young, Justin R.; Johnston-Halperin, Ezekiel; Pelz, Jonathan; Kawakami, Roland K.

    2017-02-01

    Layered Zintl phase van der Waals (vdW) materials are of interest due to their strong spin-orbit coupling and potential for high mobility. Here, we report the successful growth of large area CaGe2 films, as a model of layered Zintl phase materials, on atomically flat Ge(111) substrates by molecular beam epitaxy (MBE) using an alternating layer growth (ALG) protocol. Reflection high energy electron diffraction (RHEED) patterns of the Ge buffer layer and CaGe2 indicate high quality two dimensional surfaces, which is further confirmed by atomic force microscopy (AFM), showing atomically flat and uniform CaGe2 films. The appearance of Laue oscillations in X-ray diffraction (XRD) and Kiessig fringes in the X-ray reflectivity (XRR), which are absent in co-deposited CaGe2, confirms the uniformity of the CaGe2 film and the smoothness of the interface. These results demonstrate a novel method of deposition of CaGe2 that could be also applied to other layered Zintl phase vdW materials. Also, the high quality of the CaGe2 film is promising for the exploration of novel properties of germanane.

  9. In-situ spectral reflectance for improving molecular beam epitaxy device growth

    SciTech Connect

    Breiland, W.G.; Hammons, B.E.; Hou, H.Q.; Killeen, K.P.; Klem, J.F.; Reno, J.L.; Sherwin, M.

    1997-05-01

    This report summarizes the development of in situ spectral reflectance as a tool for improving the quality, reproducibility, and yield of device structures grown from compound semiconductors. Although initially targeted at MBE (Molecular Beam Epitaxy) machines, equipment difficulties forced the authors to test most of their ideas on a MOCVD (Metal Organic Chemical Vapor Deposition) reactor. A pre-growth control strategy using in situ reflectance has led to an unprecedented demonstration of process control on one of the most difficult device structures that can be grown with compound semiconductor materials. Hundreds of vertical cavity surface emitting lasers (VCSEL`s) were grown with only {+-} 0.3% deviations in the Fabry-Perot cavity wavelength--a nearly ten-fold improvement over current calibration methods. The success of the ADVISOR (Analysis of Deposition using Virtual Interfaces and Spectroscopic Optical Reflectance) method has led to a great deal of interest from the commercial sector, including use by Hewlett Packard and Honeywell. The algorithms, software and reflectance design are being evaluated for patents and/or license agreements. A small company, Filmetrics, Inc., is incorporating the ADVISOR analysis method in its reflectometer product.

  10. Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Dubrovskii, V. G.; Sibirev, N. V.; Cirlin, G. E.; Harmand, J. C.; Ustinov, V. M.

    2006-02-01

    A theoretical model of nanowire formation by the vapor-liquid-solid mechanism during molecular beam epitaxy and related growth techniques is presented. The model unifies the conventional adsorption-induced model, the diffusion-induced model, and the model of nucleation-mediated growth on the liquid-solid interface. The concentration of deposit atoms in the liquid alloy, the nanowire diameter, and all other characteristics of the growth process are treated dynamically as functions of the growth time. The model provides theoretical length-diameter dependences of nanowires and the dependence of the nanowire length on the technologically controlled growth conditions, such as the surface temperature and the deposition thickness. In particular, it is shown that the length-diameter curves of nanowires might convert from decreasing to increasing at a certain critical diameter and that the nanowires taper when their length becomes comparable with the adatom diffusion length on the sidewalls. The theoretical dependence of the nanowire morphology on its lateral size and length and on the surface temperature are compared to the available experimental data obtained recently for Si and GaAs nanowires.

  11. Growth and characterization of GaAs layers on Si substrates by migration-enhanced molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Kim, Jae-Hoon; Liu, John K.; Radhakrishnan, Gouri; Katz, Joseph; Sakai, Shiro

    1988-01-01

    Migration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layer on Si substrates (GaAs/Si) are reported. The MEMBE growth method is described, and material properties are compared with those of normal two-step MBE-grown or in situ annealed layers. Micrographs of cross-section view transmission electron microscopy and scanning surface electron microscopy of MEMBE-grown GaAs/Si showed dislocation densities of 10 to the 7th/sq cm. AlGaAs/GaAs double heterostructures have been successfully grown on MEMBE GaAs/Si by both metalorganic chemical vapor deposition and liquid phase epitaxy.

  12. Molecular beam epitaxy for advanced gate stack materials and processes

    NASA Astrophysics Data System (ADS)

    Locquet, Jean-Pierre

    2005-03-01

    The material requirements for future CMOS generations - as given by the ITRS roadmap - are very challenging. This includes a high K dielectric without a low K interfacial layer, a high mobility channel and the appropriate metal gate. With the help of two projects INVEST and ET4US, we are building up a molecular beam epitaxy (MBE) infrastructure to grow this material set on large area wafers that can be further processed into small scale devices. In the INVEST project, we have developed an MBE system for the growth of complex oxides on semiconductors. The system follows the overall design of a production tool and is equipped with an RF atomic oxygen source, effusion cells, e-beam evaporators and a differential pumping stage. The oxide growth process starts with desorbing the initial surface oxide on the Si wafers in ultra-high vacuum and high temperature to create a clean reconstructed 2x1 surface. Using the atomic oxygen it is possible to oxidize the surface in a well controlled manner at low temperature and to grow very thin and dense SiOx layers, followed by the growth of 2-6 nm amorphous high K dielectrics. The process parameters permit to tune the interface layer from a SiOx rich to a silicide rich interface with a significant impact on the capacitance and the leakage. Initial focus is on developing an optimized growth recipe for high quality amorphous HfO2 and LaHfO3.5 films. This recipe was subsequently used to make wafers for a transistor batch that gave us the first N short channel MBE MOSFET's (100 nm) using an etched gate process flow. Some highlights of the first batch for 3nm HfO2 MOSFET are a high mobility (> 270 cm^2/Vs) with a corresponding low leakage current of 2 mA/cm^2). While there were some process issues for LaHfO3.5, the 3 nm MOSFET showed very low leakage currents below 10-6 A/cm^2. Interestingly all the LaHFO3.5 MOSFETs showed very low threshold voltage instabilities. In collaboration with C. Marchiori, M. Sousa, A.Guiller, H. Siegwart, D

  13. Biaxial Texture Evolution in MgO Films Fabricated Using Ion Beam-Assisted Deposition

    NASA Astrophysics Data System (ADS)

    Xue, Yan; Zhang, Ya-Hui; Zhao, Rui-Peng; Zhang, Fei; Lu, Yu-Ming; Cai, Chuan-Bing; Xiong, Jie; Tao, Bo-Wan

    2016-07-01

    The growth of multifunctional thin films on flexible substrates is important technologically, because flexible electronics require such a platform. In this study, we examined the evolution of biaxial texture in MgO films prepared using ion beam-assisted deposition (IBAD) on a Hastelloy substrate. Texture and microstructure developments were characterized through in situ reflection high-energy electron diffraction monitoring, x-ray diffraction, and atomic force microscopy, which demonstrated that biaxial texture was developed during the nucleation stage (~2.2 nm). The best biaxial texture was obtained with a thickness of approximately 12 nm. As MgO continued to grow, the influence of surface energy was reduced, and film growth was driven by the attempt to minimize volume free-energy density. Thus the MgO grains were subsequently rotated at the (002) direction toward the ion beam. In addition, an approach was developed for accelerating in-plane texture evolution by pre-depositing an amorphous MgO layer before IBAD.

  14. Simulation-Guided 3D Nanomanufacturing via Focused Electron Beam Induced Deposition

    DOE PAGES

    Fowlkes, Jason D.; Winkler, Robert; Lewis, Brett B.; ...

    2016-06-10

    Focused electron beam induced deposition (FEBID) is one of the few techniques that enables direct-write synthesis of free-standing 3D nanostructures. While the fabrication of simple architectures such as vertical or curving nanowires has been achieved by simple trial and error, processing complex 3D structures is not tractable with this approach. This is due, inpart, to the dynamic interplay between electron–solid interactions and the transient spatial distribution of absorbed precursor molecules on the solid surface. Here, we demonstrate the ability to controllably deposit 3D lattice structures at the micro/nanoscale, which have received recent interest owing to superior mechanical and optical properties.more » Moreover, a hybrid Monte Carlo–continuum simulation is briefly overviewed, and subsequently FEBID experiments and simulations are directly compared. Finally, a 3D computer-aided design (CAD) program is introduced, which generates the beam parameters necessary for FEBID by both simulation and experiment. In using this approach, we demonstrate the fabrication of various 3D lattice structures using Pt-, Au-, and W-based precursors.« less

  15. Atomic layer deposition of HfO{sub 2} on graphene through controlled ion beam treatment

    SciTech Connect

    Kim, Ki Seok; Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young E-mail: gyyeom@skku.edu; Kim, Kyong Nam E-mail: gyyeom@skku.edu

    2016-05-23

    The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar{sup +} ion beam, we cleaned the polymer residue without damaging the graphene network. HfO{sub 2} grown by atomic layer deposition on graphene cleaned using an Ar{sup +} ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar{sup +} ion cleaning) showed a non-uniform structure. A graphene–HfO{sub 2}–metal capacitor fabricated by growing 20-nm thick HfO{sub 2} on graphene exhibited a very low leakage current (<10{sup −11} A/cm{sup 2}) for Ar{sup +} ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

  16. Simulation-Guided 3D Nanomanufacturing via Focused Electron Beam Induced Deposition

    SciTech Connect

    Fowlkes, Jason D.; Winkler, Robert; Lewis, Brett B.; Stanford, Michael G.; Plank, Harald; Rack, Philip D.

    2016-06-10

    Focused electron beam induced deposition (FEBID) is one of the few techniques that enables direct-write synthesis of free-standing 3D nanostructures. While the fabrication of simple architectures such as vertical or curving nanowires has been achieved by simple trial and error, processing complex 3D structures is not tractable with this approach. This is due, inpart, to the dynamic interplay between electron–solid interactions and the transient spatial distribution of absorbed precursor molecules on the solid surface. Here, we demonstrate the ability to controllably deposit 3D lattice structures at the micro/nanoscale, which have received recent interest owing to superior mechanical and optical properties. Moreover, a hybrid Monte Carlo–continuum simulation is briefly overviewed, and subsequently FEBID experiments and simulations are directly compared. Finally, a 3D computer-aided design (CAD) program is introduced, which generates the beam parameters necessary for FEBID by both simulation and experiment. In using this approach, we demonstrate the fabrication of various 3D lattice structures using Pt-, Au-, and W-based precursors.

  17. Multi-beam pulsed laser deposition for advanced thin-film optical waveguides

    NASA Astrophysics Data System (ADS)

    Eason, R. W.; May-Smith, T. C.; Sloyan, K. A.; Gazia, R.; Darby, M. S. B.; Sposito, A.; Parsonage, T. L.

    2014-01-01

    We discuss our progress in the use of multiple laser beams and multiple targets for the pulsed laser deposition of thin films for waveguide laser and magneto-optic applications. In contrast to the more widely used single-beam/single-target geometries, having more than one laser-produced plume can allow tuning of the material properties and complex engineering of the deposited thin films. For optical applications—the majority of the work reported here—dopants can be selectively introduced, lattice mismatch and residual strain can be compensated, which is an important factor for successful growth of thin films of ∼ tens of microns thickness, and refractive index values can be adjusted for fabrication of sophisticated waveguiding structures. We discuss mixed, layered, superlattice and Bragg reflector growth, which involve out-of-plane engineering of the film structure, and in-plane engineered geometries for designs relevant to thin-film disc lasing devices. Finally we briefly discuss our most recent use of multi-plume growth for magneto-optic thin films, which involves compositional tuning of final magnetic properties.

  18. Direct-write deposition and focused-electron-beam-induced purification of gold nanostructures.

    PubMed

    Belić, Domagoj; Shawrav, Mostafa M; Gavagnin, Marco; Stöger-Pollach, Michael; Wanzenboeck, Heinz D; Bertagnolli, Emmerich

    2015-02-04

    Three-dimensional gold (Au) nanostructures offer promise in nanoplasmonics, biomedical applications, electrochemical sensing and as contacts for carbon-based electronics. Direct-write techniques such as focused-electron-beam-induced deposition (FEBID) can provide such precisely patterned nanostructures. Unfortunately, FEBID Au traditionally suffers from a high nonmetallic content and cannot meet the purity requirements for these applications. Here we report exceptionally pure pristine FEBID Au nanostructures comprising submicrometer-large monocrystalline Au sections. On the basis of high-resolution transmission electron microscopy results and Monte Carlo simulations of electron trajectories in the deposited nanostructures, we propose a curing mechanism that elucidates the observed phenomena. The in situ focused-electron-beam-induced curing mechanism was supported by postdeposition ex situ curing and, in combination with oxygen plasma cleaning, is utilized as a straightforward purification method for planar FEBID structures. This work paves the way for the application of FEBID Au nanostructures in a new generation of biosensors and plasmonic nanodevices.

  19. Ion beam deposition of DLC and nitrogen doped DLC thin films for enhanced haemocompatibility on PTFE

    NASA Astrophysics Data System (ADS)

    Srinivasan, S.; Tang, Y.; Li, Y. S.; Yang, Q.; Hirose, A.

    2012-08-01

    Diamond-like carbon (DLC) and N-doped DLC (DLC:N) thin films have been synthesized on polytetrafluroethylene (PTFE) and silicon wafers using ion beam deposition. Raman spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy and scanning electron microscopy were used to study the structural and morphological properties of the coated surface. The results show that the ion beam deposited DLC thin films exhibit high hardness and Young's modulus, low coefficient of friction and high adhesion to the substrate. Low concentration of nitrogen doping in DLC improves the mechanical properties and reduces the surface roughness. DLC coating decreases the surface energy and improves the wettability of PTFE. The platelet adhesion results show that the haemocompatibility of DLC coated PTFE, especially DLC:N coated PTFE, has been significantly enhanced as compared with uncoated PTFE. SEM observations show that the platelet reaction on the DLC and DLC:N coated PTFE was minimized as the platelets were much less aggregated and activated.

  20. Simulation-Guided 3D Nanomanufacturing via Focused Electron Beam Induced Deposition

    SciTech Connect

    Fowlkes, Jason D.; Winkler, Robert; Lewis, Brett B.; Stanford, Michael G.; Plank, Harald; Rack, Philip D.

    2016-06-10

    Focused electron beam induced deposition (FEBID) is one of the few techniques that enables direct-write synthesis of free-standing 3D nanostructures. While the fabrication of simple architectures such as vertical or curving nanowires has been achieved by simple trial and error, processing complex 3D structures is not tractable with this approach. This is due, inpart, to the dynamic interplay between electron–solid interactions and the transient spatial distribution of absorbed precursor molecules on the solid surface. Here, we demonstrate the ability to controllably deposit 3D lattice structures at the micro/nanoscale, which have received recent interest owing to superior mechanical and optical properties. Moreover, a hybrid Monte Carlo–continuum simulation is briefly overviewed, and subsequently FEBID experiments and simulations are directly compared. Finally, a 3D computer-aided design (CAD) program is introduced, which generates the beam parameters necessary for FEBID by both simulation and experiment. In using this approach, we demonstrate the fabrication of various 3D lattice structures using Pt-, Au-, and W-based precursors.

  1. Time-of-flight velocity analysis of atomic and molecular beams

    NASA Technical Reports Server (NTRS)

    Hagena, O. F.; Varma, A. K.

    1968-01-01

    Conditions required for resolving a given beam speed distribution were evaluated by calculating the time-of-flight (TOF) signal for a finite open time of the beam shutter. Design criteria for a beam chopper and detection system are discussed in terms of the resolution, the range of speeds to be measured, and the optimum signal to noise ratio. A TOF system for detection of high intensity molecular beams with large speed ratios, as well as for low intensity scattered beams, is described. Experimental results are presented.

  2. Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

    SciTech Connect

    A. T. Bollinger; Wu, J.; Bozovic, I.

    2016-03-15

    In this study, the molecular beam epitaxy(MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

  3. Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

    DOE PAGES

    A. T. Bollinger; Wu, J.; Bozovic, I.

    2016-03-15

    In this study, the molecular beam epitaxy(MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

  4. High-Energy Molecular Beam Source Using a Small Shock Tube: Evaluation of Convergent Type Design

    SciTech Connect

    Yoshimoto, Y.; Miyoshi, N.; Kinefuchi, I.; Takagi, S.; Matsumoto, Y.; Shimizu, K.

    2011-05-20

    Molecular beam source using a small shock tube has the potential to frequently generate high energy molecular beam in a range of 1-5 eV without any undesirable impurities. We measured shock Mach numbers in 2 and 4-mm-diameter straight tubes to know about the propagation of shock wave in a very small shock tube. In addition, we measured shock Mach numbers in convergent shock tubes of which diameters linearly decrease from 4 mm to 2 mm, which demonstrated the possibility of a convergent shock tube to generate higher energy molecular beam than straight one.

  5. Laser metal deposition with spatial variable orientation based on hollow-laser beam with internal powder feeding technology

    NASA Astrophysics Data System (ADS)

    Shi, Tuo; Lu, Bingheng; Shi, Shihong; Meng, Weidong; Fu, Geyan

    2017-02-01

    In this study, a hollow-laser beam with internal powder feeding (HLB-IPF) head is applied to achieve non-horizontal cladding and deposition of overhanging structure. With the features of this head such as uniform scan energy distribution, thin and straight spraying of the powder beam, the deposition in spatial variable orientation is conducted using a 6-axis robot. During the deposition process the head keeps tangential to the growth direction of the part. In the experiment, a "vase" shaped metal part with overhanging structure is successfully deposited, and the largest overhanging angle achieves 80° to the vertical direction. The "step effect" between cladding layers is completely eliminated with the best surface roughness of Ra=3.864 μm. Cross section of cladding layers with unequal height are deposited for angle change. Test results indicate that the formed part has uniform wall thickness, fine microstructure and high microhardness.

  6. Effect of molecular weight on the electrophoretic deposition of carbon black nanoparticles in moderately viscous systems.

    PubMed

    Modi, Satyam; Panwar, Artee; Mead, Joey L; Barry, Carol M F

    2013-08-06

    Electrophoretic deposition from viscous media has the potential to produce in-mold assembly of nanoparticles onto three-dimensional parts in high-rate, polymer melt-based processes like injection molding. The effects of the media's molecular weight on deposition behavior were investigated using a model system of carbon black and polystyrene in tetrahydrofuran. Increases in molecular weight reduced the electrophoretic deposition of the carbon black particles due to increases in suspension viscosity and preferential adsorption of the longer polystyrene chains on the carbon black particles. At low deposition times (≤5 s), only carbon black deposited onto the electrodes, but the deposition decreased with increasing molecular weight and the resultant increases in suspension viscosity. For longer deposition times, polystyrene codeposited with the carbon black, with the amount of polystyrene increasing with molecular weight and decreasing with greater charge on the polystyrene molecules. This deposition behavior suggests that use of lower molecular polymers and control of electrical properties will permit electrophoretic deposition of nanoparticles from polymer melts for high-rate, one-step fabrication of nano-optical devices, biochemical sensors, and nanoelectronics.

  7. Investigations of high mobility single crystal chemical vapor deposition diamond for radiotherapy photon beam monitoring

    SciTech Connect

    Tromson, D.; Descamps, C.; Tranchant, N.; Bergonzo, P.; Nesladek, M.; Isambert, A.

    2008-03-01

    The intrinsic properties of diamond make this material theoretically very suitable for applications in medical physics. Until now ionization chambers have been fabricated from natural stones and are commercialized by PTW, but their fairly high costs and long delivery times have often limited their use in hospital. The properties of commercialized intrinsic polycrystalline diamond were investigated in the past by many groups. The results were not completely satisfactory due to the nature of the polycrystalline material itself. In contrast, the recent progresses in the growth of high mobility single crystal synthetic diamonds prepared by chemical vapor deposition (CVD) technique offer new alternatives. In the framework of the MAESTRO project (Methods and Advanced Treatments and Simulations for Radio Oncology), the CEA-LIST is studying the potentialities of synthetic diamond for new techniques of irradiation such as intensity modulated radiation therapy. In this paper, we present the growth and characteristics of single crystal diamond prepared at CEA-LIST in the framework of the NoRHDia project (Novel Radiation Hard CVD Diamond Detector for Hadrons Physics), as well as the investigations of high mobility single crystal CVD diamond for radiotherapy photon beam monitoring: dosimetric analysis performed with the single crystal diamond detector in terms of stability and repeatability of the response signal, signal to noise ratio, response speed, linearity of the signal versus the absorbed dose, and dose rate. The measurements performed with photon beams using radiotherapy facilities demonstrate that single crystal CVD diamond is a good alternative for air ionization chambers for beam quality control.

  8. Influence of metal co-deposition on silicon nanodot patterning dynamics during ion-beam sputtering

    NASA Astrophysics Data System (ADS)

    Gago, R.; Redondo-Cubero, A.; Palomares, F. J.; Vázquez, L.

    2014-10-01

    We address the impact of metal co-deposition in the nanodot patterning dynamics of Si(100) surfaces under normal-incidence 1 keV Ar+ ion-beam sputtering (IBS). In particular, the effect of both the metal nature (Fe or Mo) and flux has been studied. Morphological and compositional evolution were followed by atomic force microscopy (AFM) and Rutherford backscattering spectrometry, respectively. For the same type of impurity, the dynamics is faster for a higher co-deposition flux, which also drives to larger asymptotic roughness and wavelength. Mo co-deposition yields rougher surfaces for a lower metal coverage than Fe and, remarkably, higher ordered patterns. X-ray photoelectron spectroscopy reveals the formation of silicide bonds even before pattern onset, stressing the relevant role of the affinity of the co-deposited metals for silicon. Further, current-sensing AFM performed at the initial and asymptotic stages indicates that the nanodot structures are metal-rich, resulting in coupled compositional and morphological patterns. These results are discussed in terms of phase segregation, morphology-driven local flux variations of impurities and silicide formation. This analysis reveals that the underlying (concurrent) mechanisms of pattern formation are complex since many processes can come into play with a different relative weight depending on the specific patterning conditions. From a practical point of view, it is shown that, by proper selection of the process parameters, IBS with metal co-deposition can be used to tune the dynamics and pattern properties and, interestingly, to produce highly ordered arrays.

  9. Ion-beam-assisted deposition of metal nanocluster thin films with nonlinear optical properties

    SciTech Connect

    Cotell, C.M.; Carosella, C.A.; Flom, S.R.; Schiestel, S.; Haralampus, N.; Barnett, T.W.; Bartoli, F.J.

    1996-12-31

    Metal nanocluster thin films ({approximately} 200 nm thickness) consisting of noble metal (Au) clusters (5--30 nm) in an active metal oxide (Nb{sub 2}O{sub 5}) matrix were deposited by evaporation or ion beam assisted deposition (IBAD). In some cases the films were given a post-deposition anneal. The microstructure of the films was examined by plan view and cross sectional transmission electron microscopy (TEM). The size of the metal nanoclusters was found to depend upon the temperature of the post-deposition anneal as well as the conditions of ion bombardment. Ion bombardment was found to stabilize smaller size particles. The linear optical properties of the films, as measured by VIS/UV spectroscopy, show particle size-dependent surface plasmon resonance effects. The nonlinear optical (NLO) properties of the nanoclusters in oxidized niobium were probed experimentally using degenerate four wave mixing (DFWM) and nonlinear transmission (NLT). The DFWM measurements yielded signals that showed strong evidence of saturation and give large values of {vert_bar}{chi}{sup (3)}{sub xxxx}{vert_bar}. NLT measurements demonstrated that the nonlinear absorption coefficient and, hence, I{sub m}{chi}{sup (3)}{sub xxxx} was negative. Time resolved DFWM measurements exhibited dynamics that decayed on a several picosecond time scale. The magnitude and the picosecond dynamics of the NLO response were compared to those observed in gold nanoclusters formed by ion implantation in other media. The advantages of the IBAD method for fabricating third order NLO films include the ability to deposit films of arbitrary active region thickness and, more importantly, high cluster densities.

  10. A new crossed molecular beam apparatus using time-sliced ion velocity imaging technique

    SciTech Connect

    Wu Guorong; Zhang Weiqing; Pan Huilin; Shuai Quan; Jiang Bo; Dai Dongxu; Yang Xueming

    2008-09-15

    A new crossed molecular beam apparatus has been constructed for investigating polyatomic chemical reactions using the time-sliced ion velocity map imaging technique. A unique design is adopted for one of the two beam sources and allows us to set up the molecular beam source either horizontally or vertically. This can be conveniently used to produce versatile atomic or radical beams from photodissociation and as well as electric discharge. Intensive H-atom beam source with high speed ratio was produced by photodissociation of the HI molecule and was reacted with the CD{sub 4} molecule. Vibrational-state resolved HD product distribution was measured by detecting the CD{sub 3} product. Preliminary results were also reported on the F+SiH{sub 4} reaction using the discharged F atom beam. These results demonstrate that this new instrument is a powerful tool for investigating chemical dynamics of polyatomic reactions.

  11. Measurement of the density profile of pure and seeded molecular beams by femtosecond ion imaging

    SciTech Connect

    Meng, Congsen; Janssen, Maurice H. M.

    2015-02-15

    Here, we report on femtosecond ion imaging experiments to measure the density profile of a pulsed supersonic molecular beam. Ion images are measured for both a molecular beam and bulk gas under identical experimental conditions via femtosecond multiphoton ionization of Xe atoms. We report the density profile of the molecular beam, and the measured absolute density is compared with theoretical calculations of the centre line beam density. Subsequently, we discuss reasons accounting for the differences between measurements and calculations and propose that strong skimmer interference is the most probable cause for the differences. Furthermore, we report on experiments measuring the centre line density of seeded supersonic beams. The femtosecond ion images show that seeding the heavy Xe atom at low relative seed fractions (1%-10%) in a light carrier gas like Ne results in strong relative enhancements of up to two orders of magnitude.

  12. Characterization of focused ion beam induced processes (etching and metal deposition)

    SciTech Connect

    Gandhi, A.

    1991-01-01

    Significant gains have been made in recent years in deployment of focused ion beams (FIBs) for submicron surface-topology modification. As the scope and complexity of this technology increases, a need has arisen to understand and characterize the phenomena responsible for metal deposition and etching using FIBs. To facilitate such characterization, a parametric model was developed by analyzing the relationship between the various input and output quantities. Etch rate and deposition rate are the primary output variables while the independent or adjustable variables are gas flux, scanning speed, and temperature. The process parameters, derived from the best fit between the data and the model, provide a test basis for evaluation of surface mechanisms. Additionally, the model is used to optimize the process to efficiently manipulate the desired outputs (for instance, deposition rate, etch rate, saturation factor, etc.). A key aspect of the accurate modeling procedure used here is what is called the spiked (current) delivery approach where the instantaneous value as opposed to the time-averaged value of the ion-flux impact on the target is considered.

  13. Structural transitions in electron beam deposited Co-carbonyl suspended nanowires at high electrical current densities.

    PubMed

    Gazzadi, Gian Carlo; Frabboni, Stefano

    2015-01-01

    Suspended nanowires (SNWs) have been deposited from Co-carbonyl precursor (Co2(CO)8) by focused electron beam induced deposition (FEBID). The SNWs dimensions are about 30-50 nm in diameter and 600-850 nm in length. The as-deposited material has a nanogranular structure of mixed face-centered cubic (FCC) and hexagonal close-packed (HCP) Co phases, and a composition of 80 atom % Co, 15 atom % O and 5 atom % C, as revealed by transmission electron microscopy (TEM) analysis and by energy-dispersive X-ray (EDX) spectroscopy, respectively. Current (I)-voltage (V) measurements with current densities up to 10(7) A/cm(2) determine different structural transitions in the SNWs, depending on the I-V history. A single measurement with a sudden current burst leads to a polycrystalline FCC Co structure extended over the whole wire. Repeated measurements at increasing currents produce wires with a split structure: one half is polycrystalline FCC Co and the other half is graphitized C. The breakdown current density is found at 2.1 × 10(7) A/cm(2). The role played by resistive heating and electromigration in these transitions is discussed.

  14. Electron beam physical vapor deposition of thin ruby films for remote temperature sensing

    SciTech Connect

    Li Wei; Coppens, Zachary J.; Greg Walker, D.; Valentine, Jason G.

    2013-04-28

    Thermographic phosphors (TGPs) possessing temperature-dependent photoluminescence properties have a wide range of uses in thermometry due to their remote access and large temperature sensitivity range. However, in most cases, phosphors are synthesized in powder form, which prevents their use in high resolution micro and nanoscale thermal microscopy. In the present study, we investigate the use of electron beam physical vapor deposition to fabricate thin films of chromium-doped aluminum oxide (Cr-Al{sub 2}O{sub 3}, ruby) thermographic phosphors. Although as-deposited films were amorphous and exhibited weak photoluminescence, the films regained the stoichiometry and {alpha}-Al{sub 2}O{sub 3} crystal structure of the combustion synthesized source powder after thermal annealing. As a consequence, the annealed films exhibit both strong photoluminescence and a temperature-dependent lifetime that decreases from 2.9 ms at 298 K to 2.1 ms at 370 K. Ruby films were also deposited on multiple substrates. To ensure a continuous film with smooth surface morphology and strong photoluminescence, we use a sapphire substrate, which is thermal expansion coefficient and lattice matched to the film. These thin ruby films can potentially be used as remote temperature sensors for probing the local temperatures of micro and nanoscale structures.

  15. Formation of shallow junctions during rapid thermal processing from electron-beam deposited boron sources

    SciTech Connect

    Zagozdzon-Wosik, W.; Korablev, K.; Rusakova, I.; Wolfe, J.C.; Simons, D.; Chi, P.; Shi, J.H.

    1996-09-01

    Diffusion via rapid thermal processing (RTP) has been investigated for fabrication of shallow p-type layers doped with boron. The authors used dopant sources deposited by electron beam evaporation in the form of thin boron layers with or without in situ deposited silicon capping films. The deposition process is compatible with the resist mask due to low temperatures and poor step coverage, which facilitate dopant removal via a lift-off process. Sheet resistance measurements together with secondary ion mass spectroscopy and spreading resistance profiling analyses indicate that doping efficiency is high for both types of sources in the temperature range of 900 to 1,050 C for 10 to 30 s. Full dopant activation in the silicon substrate, except for the surface region, has been recorded for all process conditions. High surface concentrations observed in the processed samples were attributed to a residual boron layer. Oxidation during doping via RTP results in diffusion enhancement and in consumption of the boron source. Results of cross-sectional transmission electron microscopy (TEM) analyses confirm fast oxide growth rates during the diffusion processes in an oxygen ambient. No defects within the doped layers have been found for the process conditions used in the experiments.

  16. Fabrication of precision high quality facets on molecular beam epitaxy material

    DOEpatents

    Petersen, Holly E.; Goward, William D.; Dijaili, Sol P.

    2001-01-01

    Fabricating mirrored vertical surfaces on semiconductor layered material grown by molecular beam epitaxy (MBE). Low energy chemically assisted ion beam etching (CAIBE) is employed to prepare mirrored vertical surfaces on MBE-grown III-V materials under unusually low concentrations of oxygen in evacuated etching atmospheres of chlorine and xenon ion beams. UV-stabilized smooth-surfaced photoresist materials contribute to highly vertical, high quality mirrored surfaces during the etching.

  17. Unraveling Cold Molecular Collisions: Stark Decelerators in Crossed-Beam Experiments.

    PubMed

    Onvlee, Jolijn; Vogels, Sjoerd N; van de Meerakker, Sebastiaan Y T

    2016-11-18

    In the last two decades, enormous progress has been made in the manipulation of molecular beams. In particular, molecular decelerators have been developed with which advanced control over neutral molecules in a beam can be achieved. By using arrays of inhomogeneous and time-varying electric (or magnetic) fields, bunches of molecules can be produced with a tunable velocity, narrow velocity spreads, and almost perfect quantum-state purity. These monochromatic or "tamed" molecular beams are ideally suited to be used in crossed-molecular-beam scattering experiments. Here, we review the first generation of these "cold and controlled" scattering experiments that have been conducted in the last decade and discuss the prospects for this emerging field of research in the years to come.

  18. REFLEX: An energy deposition code that models the effects of electron reflection during electron beam heating tests

    SciTech Connect

    Stone, C.A. IV; Croessmann, C.D.; Whitley, J.B.

    1988-01-01

    This report describes an energy coupling model that considers electron reflection losses during electron beam heating experiments. This model is embodied on the REFLEX computer code, written in standard FORTRAN 77. REFLEX currently models energy deposition phenomena in three different sample geometries. These configurations include flat, cylindrical shell, and hemispherical shell surfaces. Given the electron beam operating parameters, REFLEX calculates the heat flux profile over a sample's surface, the total amount of energy deposited into a sample, and the percentage of the electron beam energy that is transferred to a sample. This document describes the energy deposition equations used in the REFLEX code; the program is described and detailed instructions are given regarding the input. Results are given for each geometry and possible experimental applications are presented. 3 refs., 20 figs., 11 tabs.

  19. Formation and destruction of cube texture in MgO films using ion beam assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Hühne, Ruben; Beyer, Christoph; Holzapfel, Bernhard; Oertel, Carl-Georg; Schultz, Ludwig; Skrotzki, Werner

    2001-07-01

    Biaxially textured MgO thin films were deposited on amorphous substrates using ion beam assisted pulsed laser deposition. The development of the texture and microstructure was investigated with electron diffraction and atomic force microscopy. After the first few nanometers of growth, a sharp nucleation texture is observed. During further growth a texture change takes place, leading to two texture components, one in the <220> direction and the other in the <111> direction parallel to the substrate normal. In both cases the <200> direction is parallel to the ion beam. This texture change can be explained in terms of the highly anisotropic sputter rate observed in experiments on single crystals, leading to grains having a <200> direction parallel to the ion beam during growth being preferred. Without ion beam assistance during further growth, one of the two texture components dominates.

  20. Plasma and ion beam enhanced chemical vapour deposition of diamond and diamond-like carbon

    NASA Astrophysics Data System (ADS)

    Tang, Yongji

    WC-Co cutting tools are widely used in the machining industry. The application of diamond coatings on the surfaces of the tools would prolong the cutting lifetime and improves the manufacturing efficiency. However, direct chemical vapor deposition (CVD) of diamond coatings on WC-Co suffer from severe premature adhesion failure due to interfacial graphitization induced by the binder phase Co. In this research, a combination of hydrochloric acid (HCl) and hydrogen (H2) plasma pretreatments and a novel double interlayer of carbide forming element (CFE)/Al were developed to enhance diamond nucleation and adhesion. The results showed that both the pretreatments and interlayers were effective in forming continuous and adhesive nanocrystalline diamond coatings. The method is a promising replacement of the hazardous Murakami's regent currently used in WC-Co pretreatment with a more environmental friendly approach. Apart from coatings, diamond can be fabricated into other forms of nanostructures, such as nanotips. In this work, it was demonstrated that oriented diamond nanotip arrays can be fabricated by ion beam etching of as-grown CVD diamond. The orientation of diamond nanotips can be controlled by adjusting the direction of incident ion beam. This method overcomes the limits of other techniques in producing nanotip arrays on large areas with controlled orientation. Oriented diamond nano-tip arrays have been used to produce anisotropic frictional surface, which is successfully used in ultra-precision positioning systems. Diamond-like carbon (DLC) has many properties comparable to diamond. In this thesis, the preparation of alpha-C:H thin films by end-Hall (EH) ion source and the effects of ion energy and nitrogen doping on the microstructure and mechanical properties of the as-deposited thin films were investigated. The results have demonstrated that smooth and uniform alpha-C:H and alpha-C:H:N films with large area and reasonably high hardness and Young's modulus can be

  1. Molecular Beam Epitaxy Growth and Characterization of Thin Layers of Semiconductor Tin

    DTIC Science & Technology

    2016-09-01

    heating. The α-Sn layers were also characterized with high-resolution X-ray diffraction, Hall, and atomic force microscopy (AFM) measurements...ARL-TR-7838 ● SEP 2016 US Army Research Laboratory Molecular Beam Epitaxy Growth and Characterization of Thin Layers of...Laboratory Molecular Beam Epitaxy Growth and Characterization of Thin Layers of Semiconductor Tin by P Folkes, P Taylor, C Rong, B Nichols

  2. High aspect ratio AFM Probe processing by helium-ion-beam induced deposition.

    PubMed

    Onishi, Keiko; Guo, Hongxuan; Nagano, Syoko; Fujita, Daisuke

    2014-11-01

    A Scanning Helium Ion Microscope (SHIM) is a high resolution surface observation instrument similar to a Scanning Electron Microscope (SEM) since both instruments employ finely focused particle beams of ions or electrons [1]. The apparent difference is that SHIMs can be used not only for a sub-nanometer scale resolution microscopic research, but also for the applications of very fine fabrication and direct lithography of surfaces at the nanoscale dimensions. On the other hand, atomic force microscope (AFM) is another type of high resolution microscopy which can measure a three-dimensional surface morphology by tracing a fine probe with a sharp tip apex on a specimen's surface.In order to measure highly uneven and concavo-convex surfaces by AFM, the probe of a high aspect ratio with a sharp tip is much more necessary than the probe of a general quadrangular pyramid shape. In this paper we report the manufacture of the probe tip of the high aspect ratio by ion-beam induced gas deposition using a nanoscale helium ion beam of SHIM.Gas of platinum organic compound was injected into the sample surface neighborhood in the vacuum chamber of SHIM. The decomposition of the gas and the precipitation of the involved metal brought up a platinum nano-object in a pillar shape on the normal commercial AFM probe tip. A SHIM system (Carl Zeiss, Orion Plus) equipped with the gas injection system (OmniProbe, OmniGIS) was used for the research. While the vacuum being kept to work, we injected platinum organic compound ((CH3)3(CH3C5H4)Pt) into the sample neighborhood and irradiated the helium ion beam with the shape of a point on the apex of the AFM probe tip. It is found that we can control the length of the Pt nano-pillar by irradiation time of the helium ion beam. The AFM probe which brought up a Pt nano-pillar is shown in Figure 1. It is revealed that a high-aspect-ratio Pt nano-pillar of ∼40nm diameter and up to ∼2000 nm length can be grown. In addition, for possible heating

  3. Oxidation-resistant coatings on titanium alloys by ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Bedell, C. J.; Bishop, H. E.; Dearnaley, G.; Desport, J. E.; Romary, H.; Romary, J.-M.

    1991-07-01

    The high strength and creep resistance of modern titanium alloys makes them potentially attractive for aero engine compressor blades operating at temperatures above 500° C, to improve thermal efficiency and performance. However, all these alloys suffer from oxidation at such elevated temperatures and the in-diffusing oxygen stabilizes the more brittle alpha-phase of the alloy making it prone to crack under stress. There is thus a need for protective highly adherent coatings. In the present work, chromium was deposited with simultaneous ion bombardment using 60 keV nitrogen ions, to a thickness of 1 μm. Ion assisted deposition provides excellent adhesion and a very compact, pore-free coating with a small grain size. However, at high temperatures titanium diffuses into the chromium and impairs its protectiveness. To combat this, a diffusion barrier of silicon nitride was deposited first, by evaporating silicon and matching the rate of arrival of Si atoms with a 0.5 keV nitrogen ion beam from a Kaufman source to produce Si 3N 4 to thicknesses from 0.1 to 0.3 μm. As an added protection, in some experiments an overlay coating of about 0.3 μm of silicon nitride was deposited after the chromium layer. Oxidation was carried out in air at temperatures between 600 and 800° C and for periods up to 100 h. Subsequent analysis by SIMS showed excellent protection up to at least 700° C but diffusion across the barrier occurred at 800° C. Titanium nitride was less successful than silicon nitride for barrier purposes.

  4. Characterization and growth mechanisms of boron nitride films synthesized by ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Burat, O.; Bouchier, D.; Stambouli, V.; Gautherin, G.

    1990-09-01

    We have studied boron nitride films deposited at room temperature by ion-beam-assisted deposition in an ultrahigh vacuum apparatus, with ion accelerating voltages ranging between 0.25 and 2 kV. By using complementarily in situ Auger electron spectrometry and ex situ nuclear analyses to determine the respective surface and bulk N concentrations in the deposited films, we were able to identify the different phases of the mechanism leading to the nitridation of evaporated boron by nitrogen ions. For low nitrogen/boron flux ratios, the incorporation of nitrogen seems to be only governed by ion implantation, and, with respect to the depth of the deposit, the surface is found largely depleted in nitrogen, while the N-incorporation yield remains close to one whatever the ion energy. Such a behavior is well verified as long as a critical bulk nitrogen concentration close to 5.5×1022 cm-3 has not been achieved. For concentrations greater than this, superstoichiometric material is obtained up to a saturation which corresponds to a bulk N incorporation ranging from 6 to 7×1022 cm-3. Further increase of the N/B flux ratio induces a strong diffusion process from N-rich bulk to N-depleted surface, which results in the nitridation of surface boron atoms and a loss of nitrogen by sputtering or desorption. The density measurements seem to indicate that the synthesized phase is close to h-BN. However, the density of B-rich layers ([N]/[B]≊0.2-0.3) is found to be very close to that calculated for a mixture of pure boron and c-BN. The transparency and microhardness of the synthesized BN have satisfying values for its application as a wear-resistant optical coating, but it is not c-BN.

  5. Congruent evaporation temperature of molecular beam epitaxy grown GaAs (001) determined by local droplet etching

    NASA Astrophysics Data System (ADS)

    Heyn, Ch.; Jesson, D. E.

    2015-10-01

    The congruent evaporation temperature Tc of GaAs (001) is critical for many technological processes and is fundamental to the control and stability of Ga droplets for quantum structure fabrication. We apply the technique of local droplet etching (LDE) to measure Tc for technologically important molecular beam epitaxy (MBE) grown GaAs (001). Below Tc, Ga droplets deposited on the surface shrink and form nanoholes via LDE and thermal widening. Above Tc, droplets grow by capturing excess Ga. From the transition between both regimes, we determine Tc = 680 ± 10 °C. Additionally, we find that the nanohole/droplet densities follow an Arrhenius-type temperature dependence with an activation energy of 1.31 eV. The method probes the stability of pre-existing droplets formed by deposition and so avoids the complication of nucleation barriers and readily allows the measurement of Tc for technologically important planar GaAs surfaces in any standard MBE system.

  6. Molecular beam epitaxy growth methods of wavelength control for InAs/(In)GaAsN/GaAs heterostructures.

    PubMed

    Mamutin, V V; Egorov, A Yu; Kryzhanovskaya, N V

    2008-11-05

    We discuss the molecular beam epitaxy (MBE) growth methods of emission wavelength control and property investigations for different types of InAs/(In)GaAsN/GaAs heterostructures containing InGaAsN quantum-size layers: (1) InGaAsN quantum wells deposited by the conventional mode in a GaAs matrix, (2) InAs quantum dots deposited in a GaAsN matrix or covered by an InGaAs(N) layer, and (3) InAs/InGaAsN/GaAsN strain-compensated superlattices with quantum wells and quantum dots. The structures under investigation have demonstrated photoluminescence emission in a wavelength range of ∼1.3-1.8 µm at room temperature without essential deterioration of the radiative properties.

  7. Internal Energy Dependence of Molecular Condensation Coefficients Determined from Molecular Beam Surface Scattering Experiments

    DOE R&D Accomplishments Database

    Sibener, S. J.; Lee, Y. T.

    1978-05-01

    An experiment was performed which confirms the existence of an internal mode dependence of molecular sticking probabilities for collisions of molecules with a cold surface. The scattering of a velocity selected effusive beam of CCl{sub 4} from a 90 K CC1{sub 4} ice surface has been studied at five translational velocities and for two different internal temperatures. At a surface temperature of 90 K (approx. 99% sticking probability) a four fold increase in reflected intensity was observed for the internally excited (560 K) CC1{sub 4} relative to the room temperature (298 K) CC1{sub 4} at a translational velocity of 2.5 X 10{sup 4} cm/sec. For a surface temperature of 90 K all angular distributions were found to peak 15{sup 0} superspecularly independent of incident velocity.

  8. Taming molecular beams; towards a gas-phase molecular laboratory on a chip

    NASA Astrophysics Data System (ADS)

    Meek, Samuel A.; Santambrogio, Gabriele; Conrad, Horst; Meijer, Gerard

    2009-11-01

    The manipulation of gas-phase molecules with electric and magnetic fields above a chip is an emerging field of research. Miniaturization of the electric and magnetic field structures allows for the creation of large field gradients and tight traps above the chip. Present-day microelectronics technology enables the integration of complicated tools and devices on a compact surface area. The molecules can be positioned extremely accurately and reproducibly above the chip where they can be held isolated from their environment and where there is excellent access to them. It is expected that several of the gas-phase molecular beam experiments that are currently being done in machines that are up to several meters in length can in the future be performed on a surface area of a few cm2 and that many new experiments will become possible.

  9. Superconductivity and metallic behavior in PbxCyOδ structures prepared by focused electron beam induced deposition

    NASA Astrophysics Data System (ADS)

    Winhold, M.; Weirich, P. M.; Schwalb, C. H.; Huth, M.

    2014-10-01

    Focused electron beam induced deposition as a direct-write approach possesses great potential to meet the demands for superconducting nanostructure fabrication especially regarding its 3D patterning capabilities combined with the high resolution in the nanometer regime. So far, however, it was not possible to fabricate superconducting structures with this technique. In this work, we present a lead-based superconductor prepared by focused electron beam induced deposition by dissociation of the precursor tetraethyllead. The as-grown structures exhibit metallic behavior and a minimum resistivity in the normal state of ρ = 16 μΩcm at T = 9 K followed by a superconducting transition at Tc = 7.2 K.

  10. Processing and characterization of high temperature superconductor thin films deposited by electron beam co-evaporation

    NASA Astrophysics Data System (ADS)

    Huh, Jeong-Uk

    Ever since the high temperature superconductors (HTS) were discovered in the late 1980s, there have been enormous efforts to make this into applications such as power transmission cables, transformers, motors and generators. However, many obstacles in performance and high manufacturing cost made this difficult. The first generation HTS wires had low critical current density and were expensive to fabricate. The motivation of this research was to make high performance and low cost second generation HTS coated conductor. Electron beam co-evaporation technique was used to deposit YBCO(YBa2Cu3O7-x ) film at a high rate (10nm/s and higher) on single crystals and metal tapes. The oxygen pressure at the stage of depositing Y, Ba, Cu was 5x10 -5 Torr and the process temperature was 810-840°C. In-situ Fourier Transform Infrared spectroscopy (FTIR) was used to monitor the optical properties of the YBCO during and after deposition. The deposit transformed to a glassy amorphous mixture of Y, Ba and Cu at 3 mTorr of oxygen. YBCO crystallization occurred after extra oxygen was applied to several Torr. FTIR showed almost the same signature during the formation of YBCO and liquid Ba-Cu-O during deposition, which indicates the liquid played an important role in determining the properties of YBCO in terms of providing epitaxy and fast transport of atoms to nucleate on the film-metal interface. The transformation was very rapid---seconds to minutes, compared to minutes to hours for other post-reaction processes. The oxygen partial pressure and the rate of oxidation (supersaturation) in the liquid region defined in the YBCO phase stability diagram determined the electrical and microstructural properties. In-situ X-ray diffraction heating stage with ambient control was utilized to study this supersaturation effect and explore the temperature-pressure space during YBCO growth. With all the information gathered from FTIR and XRD in-situ experiments and also with nano-engineering during

  11. Crossed molecular beam studies of atmospheric chemical reaction dynamics

    SciTech Connect

    Zhang, Jingsong

    1993-04-01

    The dynamics of several elementary chemical reactions that are important in atmospheric chemistry are investigated. The reactive scattering of ground state chlorine or bromine atoms with ozone molecules and ground state chlorine atoms with nitrogen dioxide molecules is studied using a crossed molecular beams apparatus with a rotatable mass spectrometer detector. The Cl + O3 → ClO + O2 reaction has been studied at four collision energies ranging from 6 kcal/mole to 32 kcal/mole. The derived product center-of-mass angular and translational energy distributions show that the reaction has a direct reaction mechanism and that there is a strong repulsion on the exit channel. The ClO product is sideways and forward scattered with respect to the Cl atom, and the translational energy release is large. The Cl atom is most likely to attack the terminal oxygen atom of the ozone molecule. The Br + O3 → ClO + O2 reaction has been studied at five collision energies ranging from 5 kcal/mole to 26 kcal/mole. The derived product center-of-mass angular and translational energy distributions are quite similar to those in the Cl + O3 reaction. The Br + O3 reaction has a direct reaction mechanism similar to that of the Cl + O3 reaction. The electronic structure of the ozone molecule seems to play the central role in determining the reaction mechanism in atomic radical reactions with the ozone molecule. The Cl + NO2 → ClO + NO reaction has been studied at three collision energies ranging from 10.6 kcal/mole to 22.4 kcal/mole. The center-of-mass angular distribution has some forward-backward symmetry, and the product translational energy release is quite large. The reaction proceeds through a short-lived complex whose lifetime is less than one rotational period. The experimental results seem to show that the Cl atom mainly attacks the oxygen atom instead of the nitrogen atom of the NO2

  12. Intrinsic magnetic properties of bimetallic nanoparticles elaborated by cluster beam deposition.

    PubMed

    Dupuis, V; Khadra, G; Hillion, A; Tamion, A; Tuaillon-Combes, J; Bardotti, L; Tournus, F

    2015-11-14

    In this paper, we present some specific chemical and magnetic order obtained very recently on characteristic bimetallic nanoalloys prepared by mass-selected Low Energy Cluster Beam Deposition (LECBD). We study how the competition between d-atom hybridization, complex structure, morphology and chemical affinity affects their intrinsic magnetic properties at the nanoscale. The structural and magnetic properties of these nanoalloys were investigated using various experimental techniques that include High Resolution Transmission Electron Microscopy (HRTEM), Superconducting Quantum Interference Device (SQUID) magnetometry, as well as synchrotron techniques such as Extended X-ray Absorption Fine Structure (EXAFS) and X-ray Magnetic Circular Dichroism (XMCD). Depending on the chemical nature of the nanoalloys we observe different magnetic responses compared to their bulk counterparts. In particular, we show how specific relaxation in nanoalloys impacts their magnetic anisotropy; and how finite size effects (size reduction) inversely enhance their magnetic moment.

  13. Three dimensional magnetic nanowires grown by focused electron-beam induced deposition

    PubMed Central

    Fernández-Pacheco, Amalio; Serrano-Ramón, Luis; Michalik, Jan M.; Ibarra, M. Ricardo; De Teresa, José M.; O'Brien, Liam; Petit, Dorothée; Lee, Jihyun; Cowburn, Russell P.

    2013-01-01

    Control of the motion of domain walls in magnetic nanowires is at the heart of various recently proposed three-dimensional (3D) memory devices. However, fabricating 3D nanostructures is extremely complicated using standard lithography techniques. Here we show that highly pure 3D magnetic nanowires with aspect-ratios of ~100 can be grown using focused electron-beam-induced-deposition. By combining micromanipulation, Kerr magnetometry and magnetic force microscopy, we determine that the magnetisation reversal of the wires occurs via the nucleation and propagation of domain walls. In addition, we demonstrate that the magnetic switching of individual 3D nanostructures can be directly probed by magneto-optical Kerr effect. PMID:23512183

  14. Investigation on depth resolved compositions of e-beam deposited ZrO2 thin film

    NASA Astrophysics Data System (ADS)

    Singh, Amol; Sinha, Mangalika; Gupta, R. K.; Modi, Mohammed H.

    2017-10-01

    In-depth compositional analysis of zirconium dioxide thin film deposited on GaAs substrate by e-beam evaporation has been carried out using non-destructive soft x-ray reflectivity (SXR) technique. The compositional details of the film are quantitatively estimated from the best fit of the optical constant profile derived from SXR measurements over 55-150 Å wavelength region. The SXR analysis reveals the film composition as 60% ZrO2, 20% Zr0.8O2.2 & 20% oxygen. The interface layer formed at film/substrate interface region is found to be comprised of 25% Ga2O3, 20% As2O3, 35% ZrO2 and 20% oxygen phases.

  15. Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition

    SciTech Connect

    Wang, Yuhan Kittiwatanakul, Salinporn; Lu, Jiwei; Comes, Ryan B.; Wolf, Stuart A.

    2015-03-15

    Epitaxial NbO{sub 2} thin films were synthesized on Al{sub 2}O{sub 3} (0001) substrates via reactive bias target ion beam deposition. X-ray diffraction and Raman spectra were used to confirm the tetragonal phase of pure NbO{sub 2}. Through XPS, it was found that there was a ∼1.3 nm thick Nb{sub 2}O{sub 5} layer on the surface and the bulk of the thin film was NbO{sub 2}. The epitaxial relationship between the NbO{sub 2} film and the substrate was determined. Electrical transport measurement was measured up to 400 K, and the conduction mechanism was discussed.

  16. Cluster-assembled Tb-Fe nanostructured films produced by low energy cluster beam deposition.

    PubMed

    Zhao, Shifeng; Bi, Feng; Wan, Jian-Guo; Han, Min; Song, Fengqi; Liu, Jun-Ming; Wang, Guanghou

    2007-07-04

    Cluster-assembled Tb-Fe nanostructured films were prepared by the low energy cluster beam deposition method. The microstructure, magnetization and magnetostriction were investigated for the films. It is shown that the film is assembled by monodisperse spherical nanoparticles with average diameter of ∼30 nm which are distributed uniformly. The cluster-assembled Tb-Fe nanostructured films exhibit good magnetization and possess giant magnetostriction with saturation value of ∼1060 × 10(-6), much higher than that of the common Tb-Fe films. The origin of good magnetization and giant magnetostriction for the cluster-assembled Tb-Fe nanostructured film was discussed. The present work opens a new avenue to produce the nanostructured magnetostrictive alloy in application of a nano-electro-mechanical system.

  17. Thermal Conductivity Measurement of an Electron-Beam Physical-Vapor-Deposition Coating.

    PubMed

    Slifka, A J; Filla, B J

    2003-01-01

    An industrial ceramic thermal-barrier coating designated PWA 266, processed by electron-beam physical-vapor deposition, was measured using a steady-state thermal conductivity technique. The thermal conductivity of the mass fraction 7 % yttria-stabilized zirconia coating was measured from 100 °C to 900 °C. Measurements on three thicknesses of coatings, 170 μm, 350 μm, and 510 μm resulted in thermal conductivity in the range from 1.5 W/(m·K) to 1.7 W/(m·K) with a combined relative standard uncertainty of 20 %. The thermal conductivity is not significantly dependent on temperature.

  18. Exchange bias in polycrystalline magnetite films made by ion-beam assisted deposition

    SciTech Connect

    Kaur, Maninder; Qiang, You; Jiang, Weilin; Burks, Edward C.; Liu, Kai; Namavar, Fereydoon; McCloy, John S.

    2014-11-07

    Iron oxide films were produced using ion-beam-assisted deposition, and Raman spectroscopy and x-ray diffraction indicate single-phase magnetite. However, incorporation of significant fractions of argon in the films from ion bombardment is evident from chemical analysis, and Fe/O ratios are lower than expected from pure magnetite, suggesting greater than normal disorder. Low temperature magnetometry and first-order reversal curve measurements show strong exchange bias, which likely arises from defects at grain boundaries, possibly amorphous, creating frustrated spins. Since these samples contain grains ∼6 nm, a large fraction of the material consists of grain boundaries, where spins are highly disordered and reverse independently with external field.

  19. Quantum Devices and Structures Using Si-Based Molecular Beam Epitaxy

    DTIC Science & Technology

    1991-05-15

    Torr. The system has electron-beam evaporators for silicon and germanium , and a RHEED for in situ characterization of films. The accelera- tion voltage...The system has two electron beam evaporators for silicon and germanium deposition, and several effusion cells for doping. For this experiment, (100...negative resistance ( NDR ). As the temperature of the sample decreased, the peak- to-valley ratio of the peak at 2.5 V increases and the peak at 1.1 V

  20. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    SciTech Connect

    Lee, J. H.; Tung, I. C.; Chang, S. -H.; Bhattacharya, A.; Fong, D. D.; Freeland, J. W.; Hong, Hawoong

    2016-01-05

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Finally, additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  1. Physical properties of a-C:N films produced by ion beam assisted deposition

    SciTech Connect

    Rossi, F. ); Andre, B. ); van Veen, A.; Mijnarends, P.E.; Schut, H.; Labohm, F. ); Dunlop, H. ); Delplancke, M.P. ); Hubbard, K. )

    1994-09-01

    Carbon films with up to 32 at. % of nitrogen have been prepared with ion beam assisted magnetron, using a N[sup +][sub 2]/N[sup +] beam at energies between 50 and 300 eV. The composition and density of the films vary strongly with the deposition parameters. EELS, SXS, XPS, and IR studies show that these a-C:N films are mostly graphitic and have up to 20% [ital sp][sup 3] bonding. Nitrogen is mostly combined with carbon in nitrile (C[equivalent to]N) and imine (C=N) groups. RBS and NDP show that density goes through a maximum as the average damage energy per incoming ion increases. Positron annihilation spectroscopy shows that the void concentration in the films goes through a minimum with average damage energy. These results are consistent with a densification induced by the collisions at low average damage energy values and induced graphitization at higher damage energy values. These results are similar to what is observed for Ar ion assisted deposition of a-C films. The mechanical properties of these films have been studied with a nanoindenter, and it was found that the hardness and Young's modulus go through a maximum as the average damage energy is increased. The maximum of mechanical properties corresponds to the minimum in the void concentration in the film. Tribological studies of the a-C:N show that the friction coefficient obtained against diamond under dynamic loading decreases strongly as the nitrogen composition increases, this effect being more pronounced at low loads.

  2. Towards a single step process to create high purity gold structures by electron beam induced deposition at room temperature

    NASA Astrophysics Data System (ADS)

    Mansilla, C.; Mehendale, S.; Mulders, J. J. L.; Trompenaars, P. H. F.

    2016-10-01

    Highly pure metallic structures can be deposited by electron beam induced deposition and they have many important applications in different fields. The organo-metallic precursor is decomposed and deposited under the electron beam, and typically it is purified with post-irradiation in presence of O2. However, this approach limits the purification to the surface of the deposit. Therefore, ‘in situ’ purification during deposition using simultaneous flows of both O2 and precursor in parallel with two gas injector needles has been tested and verified. To simplify the practical arrangements, a special concentric nozzle has been designed allowing deposition and purification performed together in a single step. With this new device metallic structures with high purity can be obtained more easily, while there is no limit on the height of the structures within a practical time frame. In this work, we summarize the first results obtained for ‘in situ’ Au purification using this concentric nozzle, which is described in more detail, including flow simulations. The operational parameter space is explored in order to optimize the shape as well as the purity of the deposits, which are evaluated through scanning electron microscope and energy dispersive x-ray spectroscopy measurements, respectively. The observed variations are interpreted in relation to other variables, such as the deposition yield. The resistivity of purified lines is also measured, and the influence of additional post treatments as a last purification step is studied.

  3. Electron-beam-induced deposition and post-treatment processes to locally generate clean titanium oxide nanostructures on Si(100).

    PubMed

    Schirmer, M; Walz, M-M; Vollnhals, F; Lukasczyk, T; Sandmann, A; Chen, C; Steinrück, H-P; Marbach, H

    2011-02-25

    We have investigated the lithographic generation of TiO(x) nanostructures on Si(100) via electron-beam-induced deposition (EBID) of titanium tetraisopropoxide (TTIP) in ultra-high vacuum (UHV) by scanning electron microscopy (SEM) and local Auger electron spectroscopy (AES). In addition, the fabricated nanostructures were also characterized ex situ via atomic force microscopy (AFM) under ambient conditions. In EBID, a highly focused electron beam is used to locally decompose precursor molecules and thereby to generate a deposit. A drawback of this nanofabrication technique is the unintended deposition of material in the vicinity of the impact position of the primary electron beam due to so-called proximity effects. Herein, we present a post-treatment procedure to deplete the unintended deposits by moderate sputtering after the deposition process. Moreover, we were able to observe the formation of pure titanium oxide nanocrystals (<100 nm) in situ upon heating the sample in a well-defined oxygen atmosphere. While the nanocrystal growth for the as-deposited structures also occurs in the surroundings of the irradiated area due to proximity effects, it is limited to the pre-defined regions, if the sample was sputtered before heating the sample under oxygen atmosphere. The described two-step post-treatment procedure after EBID presents a new pathway for the fabrication of clean localized nanostructures.

  4. Electron-beam-induced deposition and post-treatment processes to locally generate clean titanium oxide nanostructures on Si(100)

    NASA Astrophysics Data System (ADS)

    Schirmer, M.; Walz, M.-M.; Vollnhals, F.; Lukasczyk, T.; Sandmann, A.; Chen, C.; Steinrück, H.-P.; Marbach, H.

    2011-02-01

    We have investigated the lithographic generation of TiOx nanostructures on Si(100) via electron-beam-induced deposition (EBID) of titanium tetraisopropoxide (TTIP) in ultra-high vacuum (UHV) by scanning electron microscopy (SEM) and local Auger electron spectroscopy (AES). In addition, the fabricated nanostructures were also characterized ex situ via atomic force microscopy (AFM) under ambient conditions. In EBID, a highly focused electron beam is used to locally decompose precursor molecules and thereby to generate a deposit. A drawback of this nanofabrication technique is the unintended deposition of material in the vicinity of the impact position of the primary electron beam due to so-called proximity effects. Herein, we present a post-treatment procedure to deplete the unintended deposits by moderate sputtering after the deposition process. Moreover, we were able to observe the formation of pure titanium oxide nanocrystals (<100 nm) in situ upon heating the sample in a well-defined oxygen atmosphere. While the nanocrystal growth for the as-deposited structures also occurs in the surroundings of the irradiated area due to proximity effects, it is limited to the pre-defined regions, if the sample was sputtered before heating the sample under oxygen atmosphere. The described two-step post-treatment procedure after EBID presents a new pathway for the fabrication of clean localized nanostructures.

  5. Closed-Loop Process Control for Electron Beam Freeform Fabrication and Deposition Processes

    NASA Technical Reports Server (NTRS)

    Taminger, Karen M. (Inventor); Hafley, Robert A. (Inventor); Martin, Richard E. (Inventor); Hofmeister, William H. (Inventor)

    2013-01-01

    A closed-loop control method for an electron beam freeform fabrication (EBF(sup 3)) process includes detecting a feature of interest during the process using a sensor(s), continuously evaluating the feature of interest to determine, in real time, a change occurring therein, and automatically modifying control parameters to control the EBF(sup 3) process. An apparatus provides closed-loop control method of the process, and includes an electron gun for generating an electron beam, a wire feeder for feeding a wire toward a substrate, wherein the wire is melted and progressively deposited in layers onto the substrate, a sensor(s), and a host machine. The sensor(s) measure the feature of interest during the process, and the host machine continuously evaluates the feature of interest to determine, in real time, a change occurring therein. The host machine automatically modifies control parameters to the EBF(sup 3) apparatus to control the EBF(sup 3) process in a closed-loop manner.

  6. Dual-ion-beam deposition of carbon films with diamond-like properties

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1985-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamond like films generated by sputtering a graphite target.

  7. New E-beam-initiated hyaluronan acrylate cryogels support growth and matrix deposition by dermal fibroblasts.

    PubMed

    Thönes, S; Kutz, L M; Oehmichen, S; Becher, J; Heymann, K; Saalbach, A; Knolle, W; Schnabelrauch, M; Reichelt, S; Anderegg, U

    2017-01-01

    Cryogels made of components of natural extracellular matrix components are potent biomaterials for bioengineering and regenerative medicine. Human dermal fibroblasts are key cells for tissue replacement during wound healing. Thus, any biomaterial for wound healing applications should enable growth, differentiation and matrix synthesis by these cells. Cryogels are highly porous scaffolds consisting of a network of interconnected pores. Here, we used a novel group of cryogels generated from acrylated hyaluronan where the polymerization was initiated by accelerated electrons (E-beam). This novel procedure omits any toxic polymerization initiators and results in sterile, highly elastic scaffolds with adjustable pore size, excellent swelling and low flow resistance properties. We show that these cryogels are effective 3D-substrates for long-term cultures of human dermal fibroblasts in vitro. The cells proliferate for at least 28days throughout the cryogels and deposit their own matrix in the pores. Moreover, key modulators of dermal fibroblasts during wound healing like TGFβ and PDGF efficiently stimulated the expression of wound healing-relevant genes. In conclusion, electron beam initiated cryogels of acrylated hyaluronan represent a functional and cell compatible biomaterial that could be adapted for special wound healing applications by further functionalization. Copyright © 2016 Elsevier B.V. All rights reserved.

  8. Magnetron sputtering system for coatings deposition with activation of working gas mixture by low-energy high-current electron beam

    NASA Astrophysics Data System (ADS)

    Gavrilov, N. V.; Kamenetskikh, A. S.; Men'shakov, A. I.; Bureyev, O. A.

    2015-11-01

    For the purposes of efficient decomposition and ionization of the gaseous mixtures in a system for coatings deposition using reactive magnetron sputtering, a low-energy (100-200 eV) high-current electron beam is generated by a grid-stabilized plasma electron source. The electron source utilizes both continuous (up to 20 A) and pulse-periodic mode of discharge with a self-heated hollow cathode (10-100 A; 0.2 ms; 10-1000 Hz). The conditions for initiation and stable burning of the high-current pulse discharge are studied along with the stable generation of a low-energy electron beam within the gas pressure range of 0.01 - 1 Pa. It is shown that the use of the electron beam with controllable parameters results in reduction of the threshold values both for the pressure of gaseous mixture and for the fluxes of molecular gases. Using such a beam also provides a wide range (0.1-10) of the flux density ratios of ions and sputtered atoms over the coating surface, enables an increase in the maximum pulse density of ion current from plasma up to 0.1 A, ensures an excellent adhesion, optimizes the coating structure, and imparts improved properties to the superhard nanocomposite coatings of (Ti,Al)N/a-Si3N4 and TiC/-a-C:H. Mass-spectrometric measurements of the beam-generated plasma composition proved to demonstrate a twofold increase in the average concentration of N+ ions in the Ar-N2 plasma generated by the high-current (100 A) pulsed electron beam, as compared to the dc electron beam.

  9. Fabrication and characterization of nanostructures on insulator substrates by electron-beam-induced deposition

    PubMed Central

    Song, Minghui; Furuya, Kazuo

    2008-01-01

    The fabrication, characterization, and decoration with metallic nanoparticles of nanostructures such as nanowhiskers, nanodendrites, and fractal-like nanotrees on insulator substrates by electron-beam-induced deposition (EBID) are reviewed. Nanostructures with different morphologies of whiskers, dendrites, or trees are fabricated on insulator (Al2O3 or SiO2) substrates by EBID in transmission electron microscopes by controlling the irradiation conditions such as the electron beam intensity. The growth of the nanostructure is related to the accumulation of charges on the surface of a substrate during electron-beam irradiation. A high concentration of the target metallic element and nanocrystal grains of the element are contained in the fabricated nanostructures. The process of growth of the nanostructures is explained qualitatively on the basis of mechanisms in which the formation of the nanostructures is considered to be related to the nanoscaled unevenness of the charge distribution on the surface of the substrate, the movement of the charges to the convex surface of the substrate, and the accumulation of charges at the tip of the grown nanostructure. Novel composite structures of Pt nanoparticle/tungsten (W) nanodendrite or Au nanoparticle/W nanodendrite are fabricated by the decoration of W nanodendrites with metallic elements. Because they have superior features, such as a large specific surface area, a freestanding structure on substrates, a typical size of several nanometers of the tip or the branch, and high purity, the nanostructures may have applications in technologies such as catalysts, sensors, and electron emitters. However, there are still some subjects that should be further studied before their application. PMID:27877950

  10. An ultra-low energy (30-200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum

    SciTech Connect

    Mach, Jindrich; Kolibal, Miroslav; Sikola, Tomas; Samoril, Tomas; Voborny, Stanislav; Zlamal, Jakub; Spousta, Jiri; Dittrichova, Libuse

    2011-08-15

    The paper describes the design and construction of an ion-atomic beam source with an optimized generation of ions for ion-beam-assisted deposition under ultrahigh vacuum (UHV) conditions. The source combines an effusion cell and an electron impact ion source and produces ion beams with ultra-low energies in the range from 30 eV to 200 eV. Decreasing ion beam energy to hyperthermal values ({approx_equal}10{sup 1} eV) without loosing optimum ionization conditions has been mainly achieved by the incorporation of an ionization chamber with a grid transparent enough for electron and ion beams. In this way the energy and current density of nitrogen ion beams in the order of 10{sup 1} eV and 10{sup 1} nA/cm{sup 2}, respectively, have been achieved. The source is capable of growing ultrathin layers or nanostructures at ultra-low energies with a growth rate of several MLs/h. The ion-atomic beam source will be preferentially applied for the synthesis of GaN under UHV conditions.

  11. Effects of the initial molecular states in a high-energy scattering of molecular beams

    NASA Astrophysics Data System (ADS)

    Leonas, V. B.; Rodionov, I. D.

    Research is reported on direct study of potential energy surfaces (PES) by measuring the vibrational-rotational transition differential cross sections. A laser fluorescence technique is proving to be promising in gaining such data in experiments with molecular beams (Leonas and Rodionov, 1982, in Russian). Since the laser fluorescence technique is still being developed, there is obviously interest in extracting information on PES from the data without selection (particularly of final states). For this, one needs dynamic manifestations of the components of the molecular PES in the state-averaged scattering cross sections. The theoretical prediction and experimental discovery of such an effect in the differential cross section averaged by final states are discussed for small scattering angles corresponding to interaction energies of 1 to 20 eV. The vibrational rainbow (VR) effect is explained by the nonadiabatic vibrational transitions influencing the scattering dynamics during the collision time. In the case of experiments with selection, the intramolecular motion effect on the transition cross section are also of interest because the absence of such an effect leads to an invariancy of experimental data so that they yield less information. Data are treated on the total rotational transition cross sections which have been recently published by Itoh, Kobayashi, and Kaneko (1981), as experimental observations of intramolecular motion effects in high-energy scattering.

  12. Mechanism of spallation in platinum aluminide/electron beam physical vapor-deposited thermal barrier coatings

    SciTech Connect

    Gell, M.; Vaidyanathan, K.; Barber, B.; Cheng, J.; Jordan, E.

    1999-02-01

    The spallation failure of a commercial thermal barrier coating (TBC), consisting of a single-crystal RENE N5 superalloy, a platinum aluminide (Pt-Al) bond coat, and an electron beam-deposited 7 wt pct yttria-stabilized zirconia ceramic layer (7YSZ), was studied following cyclic furnace testing. In the uncycled state and prior to deposition of the ceramic, the Pt-Al bond-coat surface contains a cellular network of ridges corresponding to the underlying bond-coat grain-boundary structure. With thermal cycling, the ridges and associated grain boundaries are the sites of preferential oxidation and cracking, which results in the formation of cavities that are partially filled with oxide. Using a fluorescent penetrant dye in conjunction with a direct-pull test, it is shown that, when specimens are cycled to about 80 pct of life, these grain-boundary regions show extensive debonding. The roles of oxidation and cyclic stress in localized grain boundary region spallation are discussed. The additional factors leading to large-scale TBC spallation are described.

  13. Post-growth purification of Co nanostructures prepared by focused electron beam induced deposition

    NASA Astrophysics Data System (ADS)

    Begun, E.; Dobrovolskiy, O. V.; Kompaniiets, M.; Sachser, R.; Gspan, Ch; Plank, H.; Huth, M.

    2015-02-01

    In the majority of cases nanostructures prepared by focused electron beam induced deposition (FEBID) employing an organometallic precursor contain predominantly carbon-based ligand dissociation products. This is unfortunate with regard to using this high-resolution direct-write approach for the preparation of nanostructures for various fields, such as mesoscopic physics, micromagnetism, electronic correlations, spin-dependent transport and numerous applications. Here we present an in situ cleaning approach to obtain pure Co-FEBID nanostructures. The purification procedure lies in the exposure of heated samples to a H2 atmosphere in conjunction with the irradiation by low-energy electrons. The key finding is that the combination of annealing at 300 °C, H2 exposure and electron irradiation leads to compact, carbon- and oxygen free Co layers down to a thickness of about 20 nm starting from as-deposited Co-FEBID structures. In addition to this, in temperature-dependent electrical resistance measurements on post-processed samples we find a typical metallic behavior. In low-temperature magnetoresistance and Hall effect measurements we observe ferromagnetic behavior.

  14. Structural and magnetic studies of thin Fe57 films formed by ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Lyadov, N. M.; Bazarov, V. V.; Vagizov, F. G.; Vakhitov, I. R.; Dulov, E. N.; Kashapov, R. N.; Noskov, A. I.; Khaibullin, R. I.; Shustov, V. A.; Faizrakhmanov, I. A.

    2016-08-01

    Thin Fe57 films with the thickness of 120 nm have been prepared on glass substrates by using the ion-beam-assisted deposition technique. X-ray diffraction, electron microdiffraction and Mössbauer spectroscopy studies have shown that as-deposited films are in a stressful nanostructured state containing the nanoscaled inclusions of α-phase iron with the size of ∼10 nm. Room temperature in-plane and out-of-plane magnetization measurements confirmed the presence of the magnetic α-phase in the iron film and indicated the strong effect of residual stresses on magnetic properties of the film as well. Subsequent thermal annealing of iron films in vacuum at the temperature of 450 °C stimulates the growth of α-phase Fe crystallites with the size of up to 20 nm. However, electron microdiffraction and Mössbauer spectroscopic data have shown the partial oxidation and carbonization of the iron film during annealing. The stress disappeared after annealing of the film. The magnetic behaviour of the annealed samples was characterized by the magnetic hysteresis loop with the coercive field of ∼10 mT and the saturation magnetization decreased slightly in comparison with the α-phase Fe magnetization due to small oxidation of the film.

  15. Three-Dimensional Nanostructure Fabrication by Focused Ion Beam Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Matsui, Shinji

    In this chapter, we describe three-dimensional nanostructure fabrication using 30 keV Ga+ focused ion beam chemical vapor deposition (FIB-CVD) and a phenanthrene (C14H10) source as a precursor. We also consider microstructure plastic art, which is a new field that has been made possible by microbeam technology, and we present examples of such art, including a "micro wine glass" with an external diameter of 2.75 μm and a height of 12 μm. The film deposited during such processes is diamond-like amorphous carbon, which has a Young's modulus exceeding 600 GPa, appearing to make it highly desirable for various applications. The production of three-dimensional nanostructures is also discussed. The fabrication of microcoils, nanoelectrostatic actuators, and 0.1 μm nanowiring - all potential components of nanomechanical systems - is explained. The chapter ends by describing the realization of nanoinjectors and nanomanipulators, novel nanotools for manipulating and analyzing subcellular organelles.

  16. Three-dimensional core-shell ferromagnetic nanowires grown by focused electron beam induced deposition

    NASA Astrophysics Data System (ADS)

    Pablo-Navarro, Javier; Magén, César; María de Teresa, José

    2016-07-01

    Functional nanostructured materials often rely on the combination of more than one material to confer the desired functionality or an enhanced performance of the device. Here we report the procedure to create nanoscale heterostructured materials in the form of core-shell nanowires by focused electron beam induced deposition (FEBID) technologies. In our case, three-dimensional (3D) nanowires (<100 nm in diameter) with metallic ferromagnetic cores of Co- and Fe-FEBID have been grown and coated with a protective Pt-FEBID shell (ranging 10-20 nm in thickness) aimed to minimize the degradation of magnetic properties caused by the surface oxidation of the core to a non-ferromagnetic material. The structure, chemistry and magnetism of nanowire cores of Co and Fe have been characterized in Pt-coated and uncoated nanostructures to demonstrate that the morphology of the shell is conserved during Pt coating, the surface oxidation is suppressed or confined to the Pt layer, and the average magnetization of the core is strengthened up to 30%. The proposed approach paves the way to the fabrication of 3D FEBID nanostructures based on the smart alternate deposition of two or more materials combining different physical properties or added functionalities.

  17. Three-dimensional core-shell ferromagnetic nanowires grown by focused electron beam induced deposition.

    PubMed

    Pablo-Navarro, Javier; Magén, César; de Teresa, José María

    2016-06-06

    Functional nanostructured materials often rely on the combination of more than one material to confer the desired functionality or an enhanced performance of the device. Here we report the procedure to create nanoscale heterostructured materials in the form of core-shell nanowires by focused electron beam induced deposition (FEBID) technologies. In our case, three-dimensional (3D) nanowires (<100 nm in diameter) with metallic ferromagnetic cores of Co- and Fe-FEBID have been grown and coated with a protective Pt-FEBID shell (ranging 10-20 nm in thickness) aimed to minimize the degradation of magnetic properties caused by the surface oxidation of the core to a non-ferromagnetic material. The structure, chemistry and magnetism of nanowire cores of Co and Fe have been characterized in Pt-coated and uncoated nanostructures to demonstrate that the morphology of the shell is conserved during Pt coating, the surface oxidation is suppressed or confined to the Pt layer, and the average magnetization of the core is strengthened up to 30%. The proposed approach paves the way to the fabrication of 3D FEBID nanostructures based on the smart alternate deposition of two or more materials combining different physical properties or added functionalities.

  18. Intrinsic Magnetic Properties of fct FePt Nanocubes and Rods by Cluster Beam Deposition

    NASA Astrophysics Data System (ADS)

    Akdogan, Ozan; Li, Wanfeng; Hadjipanayis, George; Skomski, Ralph; Sellmyer, David

    2012-02-01

    In this work, single crystal fct FePt nanocubes have been successfully produced by a cluster beam deposition technique without the need of post annealing. Particles have been deposited by DC magnetron sputtering using high Ar pressures (0.5 to 2 Torr) on both single crystal Si substrates and Au grids for the measurement of magnetic and structural properties, respectively. The nanocubes have a uniform size distribution with an average size of 6.5 nm. At 1 Torr, the particles have the fct structure with an order parameter of 0.5 and a RT coercivity of 2 kOe with high switching fields seen in the hysteresis loop. Particle size was controlled by changing the pressure and power and also by ex-situ annealing. In addition to these nanocubes, micron size rods (which consist of 20 nm nanoparticles) with the fct structure have been observed near the cluster gun. These particles show a room temperature coercivity of 8 kOe with an order parameter of 0.85. Intrinsic magnetic properties (Curie temperature, HA, MS and magnetic viscosity) of the nanocubes and the nanoparticles (separated from the rods) have been extensively studied and the results will be reported.

  19. Chemical tuning of PtC nanostructures fabricated via focused electron beam induced deposition

    NASA Astrophysics Data System (ADS)

    Plank, Harald; Haber, Thomas; Gspan, Christian; Kothleitner, Gerald; Hofer, Ferdinand

    2013-05-01

    The fundamental dependence between process parameters during focused electron beam induced deposition and the chemistry of functional PtC nanostructures have been studied via a multi-technique approach using SEM, (S)TEM, EELS, AFM, and EFM. The study reveals that the highest Pt contents can only be achieved by an ideal balance between potentially dissociating electrons and available precursor molecules on the surface. For precursor regimes apart from this situation, an unwanted increase of carbon is observed which originates from completely different mechanisms: (1) an excess of electrons leads to polymerization of precursor fragments whereas (2) a lack of electrons leads to incompletely dissociated precursor molecules incorporated into the nanostructures. While the former represents an unwanted class of carbon, the latter condition maximizes the volume growth rates and allows for post-growth curing strategies which can strongly increase the functionality. Furthermore, the study gives an explanation of why growing deposits can dynamically change their chemistry and provides a straightforward guide towards more controlled fabrication conditions.

  20. Chemical tuning of PtC nanostructures fabricated via focused electron beam induced deposition.

    PubMed

    Plank, Harald; Haber, Thomas; Gspan, Christian; Kothleitner, Gerald; Hofer, Ferdinand

    2013-05-03

    The fundamental dependence between process parameters during focused electron beam induced deposition and the chemistry of functional PtC nanostructures have been studied via a multi-technique approach using SEM, (S)TEM, EELS, AFM, and EFM. The study reveals that the highest Pt contents can only be achieved by an ideal balance between potentially dissociating electrons and available precursor molecules on the surface. For precursor regimes apart from this situation, an unwanted increase of carbon is observed which originates from completely different mechanisms: (1) an excess of electrons leads to polymerization of precursor fragments whereas (2) a lack of electrons leads to incompletely dissociated precursor molecules incorporated into the nanostructures. While the former represents an unwanted class of carbon, the latter condition maximizes the volume growth rates and allows for post-growth curing strategies which can strongly increase the functionality. Furthermore, the study gives an explanation of why growing deposits can dynamically change their chemistry and provides a straightforward guide towards more controlled fabrication conditions.

  1. Low-temperature (< 100 C) growth of AlN by ion beam assisted deposition

    SciTech Connect

    Karimy, H.; Tobin, E.; Bricault, R.; Cremins-Costa, A.; Colter, P.; Namavar, F.; Perry, D.

    1996-12-31

    During the past few years, there has been growing interest in aluminum nitride (AlN) thin films because of their excellent optical, electrical, chemical, mechanical and high-temperature properties. Ion beam assisted deposition (IBAD) was used to deposit AlN films on flat and curved substrates, including Si, SIMOX, sapphire, quartz, aluminum, stainless steel, and carbon, at temperatures substantially below 100 C. The objective as to enhance the physical and mechanical properties of AlN film by controlling the crystal size and structures. Experimental results, as obtained by Rutherford backscattering spectroscopy (RBS) show the formation of stoichiometric AlN. Plan-view/cross-sectional transmission electron microscopy (TEM), clearly demonstrated the formation of a smooth, uniform AlN film. Electron diffraction and dark field TEM studies clearly show the growth of AlN crystallites with cubic and/or hexagonal structures and dimensions of 30 to 100 {angstrom}. The films are transparent and have good adhesion to all substrates. In addition to excellent high temperature (up to 1,050 C measured) and chemical stability (shown through a variety of acid tests), these films have demonstrated extreme hardness, greater than two times that of bulk AlN.

  2. Fluoropolymer Films Deposited by Argon Ion-Beam Sputtering of Polytetrafluoroethylene

    NASA Technical Reports Server (NTRS)

    Golub, Morton A.; Banks, Bruce A.; Kliss, Mark (Technical Monitor)

    1998-01-01

    The FT-IR, XPS and UV spectra of fluoropolymer films (SPTFE-I) deposited by argon ion-beam sputtering of polytetrafluoroethylene (PTFE) were obtained and compared with prior corresponding spectra of fluoropolymer films (SPTFE-P) deposited by argon rf plasma sputtering of PTFE. Although the F/C ratios for SPTFE-I and -P (1.63 and 1.51) were similar, their structures were quite different in that there was a much higher concentration of CF2 groups in SPTFE-I than in SPTFE-P, ca. 61 and 33% of the total carbon contents, respectively. The FT-IR spectra reflect that difference, that for SPTFE-I showing a distinct doublet at 1210 and 1150 per centimeter while that for SPTFE-P presents a broad, featureless band at ca. 1250 per centimeter. The absorbance of the 1210-per centimeter band in SPTFE-I was proportional to the thickness of the film, in the range of 50-400 nanometers. The SPTFE-I was more transparent in the UV than SPTFE-P at comparable thickness. The mechanism for SPTFE-I formation likely involves "chopping off" of oligomeric segments of PTFE as an accompaniment to "plasma" polymerization of TFE monomer or other fluorocarbon fragments generated in situ from PTFE on impact with energetic Ar ions. Data are presented for SPTFE-I deposits and the associated Ar(+) bombarded PTFE targets where a fresh target was used for each run or a single target was used for a sequence of runs.

  3. Considerations on the Design of a Molecular Frequency Standard Based on the Molecular Beam Electric Resonance Method

    NASA Technical Reports Server (NTRS)

    Hughes, Vernon W.

    1959-01-01

    The use of a rotational state transition as observed by the molecular beam electric resonance method is discussed as a possible frequency standard particularly in the millimeter wavelength range. As a promising example the 100 kMc transition between the J = 0 and J = 1 rotational states of Li 6F19 is considered. The relative insensitivity of the transition frequency to external electric and magnetic fields and the low microwave power requirements appear favorable; the small fraction of the molecular beam that is in a single rotational state is a limiting factor.

  4. 3D Nanoprinting via laser-assisted electron beam induced deposition: growth kinetics, enhanced purity, and electrical resistivity

    DOE PAGES

    Lewis, Brett B.; Winkler, Robert; Sang, Xiahan; ...

    2017-04-07

    Here, we investigate the growth, purity, grain structure/morphology, and electrical resistivity of 3D platinum nanowires synthesized via electron beam induced deposition with and without an in situ pulsed laser assist process which photothermally couples to the growing Pt–C deposits. Notably, we demonstrate: 1) higher platinum concentration and a coalescence of the otherwise Pt–C nanogranular material, 2) a slight enhancement in the deposit resolution and 3) a 100-fold improvement in the conductivity of suspended nanowires grown with the in situ photothermal assist process, while retaining a high degree of shape fidelity.

  5. Reticle blanks for extreme ultraviolet lithography: Ion beam sputter deposition of low defect density Mo/Si multilayers

    SciTech Connect

    Vernon, S.P.; Kania, D.R.; Kearney, P.A.; Levesque, R.A.; Hayes, A.V.; Druz, B.; Osten, E.; Rajan, R.; Hedge, H.

    1996-06-24

    We report on growth of low defect density Mo/Si multilayer (ML) coatings. The coatings were grown in a deposition system designed for EUVL reticle blank fabrication. Complete, 81 layer, high reflectance Mo/Si ML coatings were deposited on 150 mm dia (100) oriented Si wafer substrates using ion beam sputter deposition. Added defects, measured by optical scattering, correspond to defect densities of 2x10{sup -2}/cm{sup 2}. This represents a reduction in defect density of Mo/Si ML coatings by a factor of 10{sup 5}.

  6. 3D Nanoprinting via laser-assisted electron beam induced deposition: growth kinetics, enhanced purity, and electrical resistivity

    PubMed Central

    Lewis, Brett B; Winkler, Robert; Sang, Xiahan; Pudasaini, Pushpa R; Stanford, Michael G; Plank, Harald; Unocic, Raymond R; Fowlkes, Jason D

    2017-01-01

    We investigate the growth, purity, grain structure/morphology, and electrical resistivity of 3D platinum nanowires synthesized via electron beam induced deposition with and without an in situ pulsed laser assist process which photothermally couples to the growing Pt–C deposits. Notably, we demonstrate: 1) higher platinum concentration and a coalescence of the otherwise Pt–C nanogranular material, 2) a slight enhancement in the deposit resolution and 3) a 100-fold improvement in the conductivity of suspended nanowires grown with the in situ photothermal assist process, while retaining a high degree of shape fidelity. PMID:28487823

  7. 3D Nanoprinting via laser-assisted electron beam induced deposition: growth kinetics, enhanced purity, and electrical resistivity.

    PubMed

    Lewis, Brett B; Winkler, Robert; Sang, Xiahan; Pudasaini, Pushpa R; Stanford, Michael G; Plank, Harald; Unocic, Raymond R; Fowlkes, Jason D; Rack, Philip D

    2017-01-01

    We investigate the growth, purity, grain structure/morphology, and electrical resistivity of 3D platinum nanowires synthesized via electron beam induced deposition with and without an in situ pulsed laser assist process which photothermally couples to the growing Pt-C deposits. Notably, we demonstrate: 1) higher platinum concentration and a coalescence of the otherwise Pt-C nanogranular material, 2) a slight enhancement in the deposit resolution and 3) a 100-fold improvement in the conductivity of suspended nanowires grown with the in situ photothermal assist process, while retaining a high degree of shape fidelity.

  8. Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Scholz, Sven; Schott, Rüdiger; Labud, Patrick A.; Somsen, Christoph; Reuter, Dirk; Ludwig, Arne; Wieck, Andreas D.

    2017-07-01

    We investigate monocrystalline InAs nanowires (NWs) which are grown catalyst assisted by molecular beam epitaxy (MBE) and create the catalyst by focused ion beam (FIB) implanted Au spots. With this combination of methods an aspect ratio, i.e. the length to width ratio, of the grown NWs up to 300 was achieved. To control the morphology and crystalline structure of the NWs, the growth parameters like temperature, flux ratios and implantation fluence are varied and optimized. Furthermore, the influence of the used molecular arsenic species, in particular the As2 to As4 ratio, is investigated and adjusted. In addition to the high aspect ratio, this optimization results in the growth of monocrystalline InAs NWs with a negligible number of stacking faults. Single NWs were placed site-controlled by FIB implantation, which supplements the working field of area growth.

  9. Compact laser molecular beam epitaxy system using laser heating of substrate for oxide film growth

    NASA Astrophysics Data System (ADS)

    Ohashi, S.; Lippmaa, M.; Nakagawa, N.; Nagasawa, H.; Koinuma, H.; Kawasaki, M.

    1999-01-01

    A high-temperature, oxygen compatible, and compact laser molecular beam epitaxy (laser MBE) system has been developed. The 1.06 μm infrared light from a continuous wave neodymium-doped yttrium aluminum garnet (Nd:YAG) laser was used to achieve a wide range and rapid control of substrate temperature in ultrahigh vacuum and at up to 1 atm oxygen pressure. The maximum usable temperature was limited to 1453 °C by the melting point of the nickel sample holder. To our knowledge, this is the highest temperature reported for pulsed laser deposition of oxide films. The efficient laser heating combined with temperature monitoring by a pyrometer and feedback control of the Nd:YAG laser power by a personal computer made it possible to regulate the substrate temperature accurately and to achieve high sample heating and cooling rates. The oxygen pressure and ablation laser triggering were also controlled by the computer. The accurate growth parameter control was combined with real-time in situ surface structure monitoring by reflection high energy electron diffraction to investigate oxide thin film growth in detail over a wide range of temperatures, oxygen partial pressures, and deposition rates. We have demonstrated the performance of this system by the fabrication of homoepitaxial SrTiO3 films as well as heteroepitaxial Sr2RuO4, and SrRuO3 films on SrTiO3 substrates at temperatures of up to 1300 °C. This temperature was high enough to change the film growth mode from layer by layer to step flow.

  10. Comparisons between tokamak fueling of gas puffing and supersonic molecular beam injection in 2D simulations

    DOE PAGES

    Zhou, Y. L.; Wang, Z. H.; Xu, X. Q.; ...

    2015-01-09

    Plasma fueling with high efficiency and deep injection is very important to enable fusion power performance requirements. It is a powerful and efficient way to study neutral transport dynamics and find methods of improving the fueling performance by doing large scale simulations. Furthermore, two basic fueling methods, gas puffing (GP) and supersonic molecular beam injection (SMBI), are simulated and compared in realistic divertor geometry of the HL-2A tokamak with a newly developed module, named trans-neut, within the framework of BOUT++ boundary plasma turbulence code [Z. H. Wang et al., Nucl. Fusion 54, 043019 (2014)]. The physical model includes plasma density,more » heat and momentum transport equations along with neutral density, and momentum transport equations. In transport dynamics and profile evolutions of both plasma and neutrals are simulated and compared between GP and SMBI in both poloidal and radial directions, which are quite different from one and the other. It finds that the neutrals can penetrate about four centimeters inside the last closed (magnetic) flux surface during SMBI, while they are all deposited outside of the LCF during GP. Moreover, it is the radial convection and larger inflowing flux which lead to the deeper penetration depth of SMBI and higher fueling efficiency compared to GP.« less

  11. Growth Parameters for Thin Film InBi Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Keen, B.; Makin, R.; Stampe, P. A.; Kennedy, R. J.; Sallis, S.; Piper, L. J.; McCombe, B.; Durbin, S. M.

    2014-04-01

    The alloying of bismuth with III-V semiconductors, in particular GaAs and InAs thin films grown by molecular beam epitaxy (MBE), has attracted considerable interest due to the accompanying changes in band structure and lattice constant. Specifically, bismuth incorporation in these compounds results in both a reduction in band gap (through shifting of the valence band) and an increase in the lattice constant of the alloy. To fully understand the composition of these alloys, a better understanding of the binary endpoints is needed. At present, a limited amount of literature exists on the III-Bi family of materials, most of which is theoretical work based on density functional theory calculations. The only III-Bi material known to exist (in bulk crystal form) is InBi, but its electrical properties have not been sufficiently studied and, to date, the material has not been fabricated as a thin film. We have successfully deposited crystalline InBi on (100) GaAs substrates using MBE. Wetting of the substrate is poor, and regions of varying composition exist across the substrate. To obtain InBi, the growth temperature had to be below 100 °C. It was found that film crystallinity improved with reduced Bi flux, into an In-rich regime. Additionally, attempts were made to grow AlBi and GaBi.

  12. Growth of ZnSnN2 by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Feldberg, N.; Aldous, J. D.; Stampe, P. A.; Kennedy, R. J.; Veal, T. D.; Durbin, S. M.

    2014-04-01

    The Zn-IV-N2 family of materials represents a potential earth abundant element alternative to conventional compound semiconductor materials that are based on gallium and indium. While both ZnSiN2 and ZnGeN2 have been studied to some degree, very little is known about the narrow-gap member ZnSnN2. Here, we investigate the growth dynamics of crystalline ZnSnN2 through plasma-assisted molecular beam epitaxy. All films exhibit some degree of crystalline order regardless of growth conditions, although significant tin coverage was observed for films grown with low Zn:Sn flux ratio; Zn flux in particular became increasingly problematic at increased substrate temperatures designed to improve crystallinity. Single-crystal material was achieved through careful optimization of growth parameters. Regardless of deposition conditions or substrate choice, however, all films exhibit a monoclinic structure as opposed to the predicted orthorhombic lattice; this can be directly attributed to sublattice disorder.

  13. Layer-by-Layer Epitaxial Growth of Scalable WSe2 on Sapphire by Molecular Beam Epitaxy.

    PubMed

    Nakano, Masaki; Wang, Yue; Kashiwabara, Yuta; Matsuoka, Hideki; Iwasa, Yoshihiro

    2017-09-13

    Molecular beam epitaxy (MBE) provides a simple but powerful way to synthesize large-area high-quality thin films and heterostructures of a wide variety of materials including accomplished group III-V and II-VI semiconductors as well as newly developing oxides and chalcogenides, leading to major discoveries in condensed-matter physics. For two-dimensional (2D) materials, however, main fabrication routes have been mechanical exfoliation and chemical vapor deposition by making good use of weak van der Waals bonding nature between neighboring layers, and MBE growth of 2D materials, in particular on insulating substrates for transport measurements, has been limited despite its fundamental importance for future advanced research. Here, we report layer-by-layer epitaxial growth of scalable transition-metal dichalocogenide (TMDC) thin films on insulating substrates by MBE and demonstrate ambipolar transistor operation. The proposed growth protocol is broadly applicable to other TMDCs, providing a key milestone toward fabrication of van der Waals heterostructures with various 2D materials for novel properties and functionalities.

  14. Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy

    SciTech Connect

    Brahlek, Matthew; Zhang, Lei; Zhang, Hai-Tian; Lapano, Jason; Engel-Herbert, Roman; Dedon, Liv R.; Martin, Lane W.

    2016-09-05

    Requisite to growing stoichiometric perovskite thin films of the solid-solution A′{sub 1-x}A{sub x}BO{sub 3} by hybrid molecular beam epitaxy is understanding how the growth conditions interpolate between the end members A'BO{sub 3} and ABO{sub 3}, which can be grown in a self-regulated fashion, but under different conditions. Using the example of La{sub 1-x}Sr{sub x}VO{sub 3}, the two-dimensional growth parameter space that is spanned by the flux of the metal-organic precursor vanadium oxytriisopropoxide and composition, x, was mapped out. The evolution of the adsorption-controlled growth window was obtained using a combination of X-ray diffraction, atomic force microscopy, reflection high-energy electron-diffraction (RHEED), and Rutherford backscattering spectroscopy. It is found that the stoichiometric growth conditions can be mapped out quickly with a single calibration sample using RHEED. Once stoichiometric conditions have been identified, the out-of-plane lattice parameter can be utilized to precisely determine the composition x. This strategy enables the identification of growth conditions that allow the deposition of stoichiometric perovskite oxide films with random A-site cation mixing, which is relevant to a large number of perovskite materials with interesting properties, e.g., high-temperature superconductivity and colossal magnetoresistance, that emerge in solid solution A′{sub 1-x}A{sub x}BO{sub 3}.

  15. Comparisons between tokamak fueling of gas puffing and supersonic molecular beam injection in 2D simulations

    SciTech Connect

    Zhou, Y. L.; Wang, Z. H.; Xu, X. Q.; Li, H. D.; Feng, H.; Sun, W. G.

    2015-01-15

    Plasma fueling with high efficiency and deep injection is very important to enable fusion power performance requirements. It is a powerful and efficient way to study neutral transport dynamics and find methods of improving the fueling performance by doing large scale simulations. Two basic fueling methods, gas puffing (GP) and supersonic molecular beam injection (SMBI), are simulated and compared in realistic divertor geometry of the HL-2A tokamak with a newly developed module, named trans-neut, within the framework of BOUT++ boundary plasma turbulence code [Z. H. Wang et al., Nucl. Fusion 54, 043019 (2014)]. The physical model includes plasma density, heat and momentum transport equations along with neutral density, and momentum transport equations. Transport dynamics and profile evolutions of both plasma and neutrals are simulated and compared between GP and SMBI in both poloidal and radial directions, which are quite different from one and the other. It finds that the neutrals can penetrate about four centimeters inside the last closed (magnetic) flux surface during SMBI, while they are all deposited outside of the LCF during GP. It is the radial convection and larger inflowing flux which lead to the deeper penetration depth of SMBI and higher fueling efficiency compared to GP.

  16. Comparisons between tokamak fueling of gas puffing and supersonic molecular beam injection in 2D simulations

    SciTech Connect

    Zhou, Y. L.; Wang, Z. H.; Xu, X. Q.; Li, H. D.; Feng, H.; Sun, W. G.

    2015-01-09

    Plasma fueling with high efficiency and deep injection is very important to enable fusion power performance requirements. It is a powerful and efficient way to study neutral transport dynamics and find methods of improving the fueling performance by doing large scale simulations. Furthermore, two basic fueling methods, gas puffing (GP) and supersonic molecular beam injection (SMBI), are simulated and compared in realistic divertor geometry of the HL-2A tokamak with a newly developed module, named trans-neut, within the framework of BOUT++ boundary plasma turbulence code [Z. H. Wang et al., Nucl. Fusion 54, 043019 (2014)]. The physical model includes plasma density, heat and momentum transport equations along with neutral density, and momentum transport equations. In transport dynamics and profile evolutions of both plasma and neutrals are simulated and compared between GP and SMBI in both poloidal and radial directions, which are quite different from one and the other. It finds that the neutrals can penetrate about four centimeters inside the last closed (magnetic) flux surface during SMBI, while they are all deposited outside of the LCF during GP. Moreover, it is the radial convection and larger inflowing flux which lead to the deeper penetration depth of SMBI and higher fueling efficiency compared to GP.

  17. Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Brahlek, Matthew; Zhang, Lei; Zhang, Hai-Tian; Lapano, Jason; Dedon, Liv R.; Martin, Lane W.; Engel-Herbert, Roman

    2016-09-01

    Requisite to growing stoichiometric perovskite thin films of the solid-solution A'1-xAxBO3 by hybrid molecular beam epitaxy is understanding how the growth conditions interpolate between the end members A'BO3 and ABO3, which can be grown in a self-regulated fashion, but under different conditions. Using the example of La1-xSrxVO3, the two-dimensional growth parameter space that is spanned by the flux of the metal-organic precursor vanadium oxytriisopropoxide and composition, x, was mapped out. The evolution of the adsorption-controlled growth window was obtained using a combination of X-ray diffraction, atomic force microscopy, reflection high-energy electron-diffraction (RHEED), and Rutherford backscattering spectroscopy. It is found that the stoichiometric growth conditions can be mapped out quickly with a single calibration sample using RHEED. Once stoichiometric conditions have been identified, the out-of-plane lattice parameter can be utilized to precisely determine the composition x. This strategy enables the identification of growth conditions that allow the deposition of stoichiometric perovskite oxide films with random A-site cation mixing, which is relevant to a large number of perovskite materials with interesting properties, e.g., high-temperature superconductivity and colossal magnetoresistance, that emerge in solid solution A'1-xAxBO3.

  18. GaN film growth on LiNbO3 surfaces using molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Hoai Nam, Man; Goo, Son Chul; Deock Kim, Moon; Yang, Woochul

    2009-09-01

    GaN has been used for high power, high frequency electronic and optoelectronic devices such as light emitting diodes and laser diodes. Most of the GaN films grow on sapphire (0001) and silicon (111) substrates. In these work, we are trying to grow GaN films on lithium niobate (LiNbO3) substrates using molecular beam epitaxy (MBE). As a ferroelectric materials, LiNbO3 has a spontaneous polarization which may provide excellent control of polarity of GaN. The growth of GaN films on LiNbO3 has been performed after the LiNbO3 substrates was annealed in air at 1000°C for 2 hours. The annealed substrates allowed us to prepare atomically flat surfaces and improve adhesion of GaN on LiNbO3. The AlN buffer layer was deposited to get a smaller lattice mismatch with the GaN films. Compared with GaN films grown without a AlN layer, the crystal qualities of GaN films with AlN buffer layers are extremely improved. The surface morphology of LiNbO3 substrates and the grown GaN films were characterized by atomic force microscopy (AFM), and the crystal structures were studied by X-ray diffraction (XRD).

  19. Molecular beam epitaxy of Cd3As2 on a III-V substrate

    NASA Astrophysics Data System (ADS)

    Schumann, Timo; Goyal, Manik; Kim, Honggyu; Stemmer, Susanne

    2016-12-01

    Epitaxial, strain-engineered Dirac semimetal heterostructures promise tuning of the unique properties of these materials. In this study, we investigate the growth of thin films of the recently discovered Dirac semimetal Cd3As2 by molecular beam epitaxy. We show that epitaxial Cd3As2 layers can be grown at low temperatures (110 °C-220 °C), in situ, on (111) GaSb buffer layers deposited on (111) GaAs substrates. The orientation relationship is described by ( 112 ) Cd3 As 2 || (111) GaSb and [ 1 1 ¯ 0 ] Cd3 As 2 || [ 1 ¯ 01 ] GaSb . The films are shown to grow in the low-temperature, vacancy ordered, tetragonal Dirac semimetal phase. They exhibit high room temperature mobilities of up to 19300 cm2/Vs, despite a three-dimensional surface morphology indicative of island growth and the presence of twin variants. The results indicate that epitaxial growth on more closely lattice matched buffer layers, such as InGaSb or InAlSb, which allow for imposing different degrees of epitaxial coherency strains, should be possible.

  20. On the suitability of high vacuum electrospray deposition for the fabrication of molecular electronic devices

    NASA Astrophysics Data System (ADS)

    Temperton, Robert H.; O'Shea, James N.; Scurr, David J.

    2017-08-01

    We present a series of three studies investigating the potential application of high vacuum electrospray deposition to construct molecular electronic devices. Through the use of time of flight secondary ion mass spectrometry we explore the use of this novel deposition technique to fabricating multilayer structures using materials that are compatible with the same solvents and films containing a mixture of molecules from orthogonal solvents. Using X-ray photoelectron spectroscopy we study the deposition of a polymer blend using electrospray and find evidence of preferential deposition of one of the components.

  1. Inorganic-Organic Coating via Molecular Layer Deposition Enables Long Life Sodium Metal Anode.

    PubMed

    Zhao, Yang; Goncharova, Lyudmila V; Zhang, Qian; Kaghazchi, Payam; Sun, Qian; Lushington, Andrew; Wang, Biqiong; Li, Ruying; Sun, Xueliang

    2017-09-13

    Metallic Na anode is considered as a promising alternative candidate for Na ion batteries (NIBs) and Na metal batteries (NMBs) due to its high specific capacity, and low potential. However, the unstable solid electrolyte interphase layer caused by serious corrosion and reaction in electrolyte will lead to big challenges, including dendrite growth, low Coulombic efficiency and even safety issues. In this paper, we first demonstrate the inorganic-organic coating via advanced molecular layer deposition (alucone) as a protective layer for metallic Na anode. By protecting Na anode with controllable alucone layer, the dendrites and mossy Na formation have been effectively suppressed and the lifetime has been significantly improved. Moreover, the molecular layer deposition alucone coating shows better performances than the atomic layer deposition Al2O3 coating. The novel design of molecular layer deposition protected Na metal anode may bring in new opportunities to the realization of the next-generation high energy-density NIBs and NMBs.

  2. Deposition of PTFE thin films by ion beam sputtering and a study of the ion bombardment effect

    NASA Astrophysics Data System (ADS)

    He, J. L.; Li, W. Z.; Wang, L. D.; Wang, J.; Li, H. D.

    1998-02-01

    Ion beam sputtering technique was employed to prepare thin films of Polytetrafluroethylene (PTFE). Simultaneous ion beam bombardment during film growth was also conducted in order to study the bombardment effects. Infrared absorption (IR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis was used to evaluate the material's integrity. It was found that PTFE thin films could be grown at room temperature by direct sputtering of a PTFE target. The film's composition and structure were shown to be dependent on the sputtering energy. Films deposited by single sputtering at higher energy (˜1500 eV) were structurally quite similar to the original PTFE material. Simultaneous ion beam bombarding during film growth caused defluorination and structural changes. Mechanism for sputtering deposition of such a polymeric material is also discussed.

  3. Use of molecular beams to support microspheres during plasma coating

    SciTech Connect

    Crane, J.K.; Smith, R.D.; Johnson, W.L.; Jordan, C.W.; Letts, S.A.; Korbel, G.R.; Krenik, R.M.

    1980-08-26

    Spherical targets can be levitated on beams of Ar or other gas atoms. This is an especially useful technique for supporting microspheres during plasma coating and processing. Measurements of gas flow and pressure indicate that the levitation device operates in the regime of Knudsen's flow. This device is currently being used in the development of future generation laser targets.

  4. Reduced electrical impedance of SiO{sub 2}, deposited through focused ion beam based systems, due to impurity percolation

    SciTech Connect

    Faraby, H.; DiBattista, M.; Bandaru, P. R.

    2014-11-28

    The electrical impedance (both the resistive and capacitive aspects) of focused ion beam (FIB) deposited SiO{sub 2} has been correlated to the specific composition of the ion beam, in Ga- and Xe-based FIB systems. The presence of electrically percolating Ga in concert with carbon (inevitably found as the product of the hydrocarbon precursor decomposition) has been isolated as a major cause for the observed decrease in the resistivity of the deposited SiO{sub 2}. Concomitant with the decreased resistivity, an increased capacitance and effective dielectric constant was observed. Our study would be useful to understand the constraints to the deposition of high quality insulator films through FIB based methodologies.

  5. In situ study of e-beam Al and Hf metal deposition on native oxide InP (100)

    SciTech Connect

    Dong, H.; KC, Santosh; Azcatl, A.; Cabrera, W.; Qin, X.; Brennan, B.; Cho, K.; Wallace, R. M.; Zhernokletov, D.

    2013-11-28

    The interfacial chemistry of thin Al (∼3 nm) and Hf (∼2 nm) metal films deposited by electron beam (e-beam) evaporation on native oxide InP (100) samples at room temperature and after annealing has been studied by in situ angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The In-oxides are completely scavenged forming In-In/In-(Al/Hf) bonding after Al and Hf metal deposition. The P-oxide concentration is significantly decreased, and the P-oxide chemical states have been changed to more P-rich oxides upon metal deposition. Indium diffusion through these metals before and after annealing at 250 °C has also been characterized. First principles calculation shows that In has lower surface formation energy compared with Al and Hf metals, which is consistent with the observed indium diffusion behavior.

  6. Second order nonlinear optical properties of zinc oxide films deposited by low temperature dual ion beam sputtering

    SciTech Connect

    Larciprete, M.C.; Passeri, D.; Michelotti, F.; Paoloni, S.; Sibilia, C.; Bertolotti, M.; Belardini, A.; Sarto, F.; Somma, F.; Lo Mastro, S.

    2005-01-15

    We investigated second order optical nonlinearity of zinc oxide thin films, grown on glass substrates by the dual ion beam sputtering technique under different deposition conditions. Linear optical characterization of the films was carried out by spectrophotometric optical transmittance and reflectance measurements, giving the complex refractive index dispersion. Resistivity of the films was determined using the four-point probe sheet resistance method. Second harmonic generation measurements were performed by means of the Maker fringes technique where the fundamental beam was originated by nanosecond laser at {lambda}=1064 nm. We found a relatively high nonlinear optical response, and evidence of a dependence of the nonlinear coefficient on the deposition parameters for each sample. Moreover, the crystalline properties of the films were investigated by x-ray diffraction measurements and correlation with second order nonlinearity were analyzed. Finally, we investigated the influence of the oxygen flow rate during the deposition process on both the second order nonlinearity and the structural properties of the samples.

  7. Measurement and Analysis of Rotational Energy of Nitrogen Molecular Beam by REMPI

    NASA Astrophysics Data System (ADS)

    Mori, H.; Yamaguchi, H.; Kataoka, K.; Sugiyama, N.; Ide, K.; Niimi, T.

    2008-12-01

    Molecular beams are powerful tools for diagnoses of solid surfaces and gas-surface interaction tests. Unfortunately, there are very few reports about experimental analysis of internal energy distribution (e.g. rotational energy) of molecular beams of diatomic or polyatomic molecules, because measurement of internal energy distribution is very difficult. Spectroscopic measurement techniques based on resonantly enhanced multiphoton ionization (REMPI) is very powerful for measurement in highly rarefied gas flows. In this study, the REMPI method is applied to measurement of rotational energy distribution of nitrogen molecular beams. The REMPI spectrum of the molecular beam indicates the rotational temperature higher than the translational temperature of 7.2 K estimated by assuming isentropic flows. The O and P branches of the REMPI spectrum correspond to the rotational temperature of 30 K, but the S branch of the spectrum deviates from that at 30 K. It seems to be because the non-equilibrium rotational energy distribution of the molecular beam deviates from the Boltzmann distribution.

  8. Measurement and Analysis of Rotational Energy of Nitrogen Molecular Beam by REMPI

    SciTech Connect

    Mori, H.; Yamaguchi, H.; Kataoka, K.; Sugiyama, N.; Ide, K.; Niimi, T.

    2008-12-31

    Molecular beams are powerful tools for diagnoses of solid surfaces and gas-surface interaction tests. Unfortunately, there are very few reports about experimental analysis of internal energy distribution (e.g. rotational energy) of molecular beams of diatomic or polyatomic molecules, because measurement of internal energy distribution is very difficult. Spectroscopic measurement techniques based on resonantly enhanced multiphoton ionization (REMPI) is very powerful for measurement in highly rarefied gas flows. In this study, the REMPI method is applied to measurement of rotational energy distribution of nitrogen molecular beams. The REMPI spectrum of the molecular beam indicates the rotational temperature higher than the translational temperature of 7.2 K estimated by assuming isentropic flows. The O and P branches of the REMPI spectrum correspond to the rotational temperature of 30 K, but the S branch of the spectrum deviates from that at 30 K. It seems to be because the non-equilibrium rotational energy distribution of the molecular beam deviates from the Boltzmann distribution.

  9. NanoSQUID magnetometry of individual cobalt nanoparticles grown by focused electron beam induced deposition

    NASA Astrophysics Data System (ADS)

    Martínez-Pérez, M. J.; Müller, B.; Schwebius, D.; Korinski, D.; Kleiner, R.; Sesé, J.; Koelle, D.

    2017-02-01

    We demonstrate the operation of low-noise nano superconducting quantum interference devices (SQUIDs) based on the high critical field and high critical temperature superconductor YBa2Cu3O7 (YBCO) as ultra-sensitive magnetometers for single magnetic nanoparticles (MNPs). The nanoSQUIDs exploit the Josephson behavior of YBCO grain boundaries and have been patterned by focused ion beam milling. This allows us to precisely define the lateral dimensions of the SQUIDs so as to achieve large magnetic coupling between the nanoloop and individual MNPs. By means of focused electron beam induced deposition, cobalt MNPs with a typical size of several tens of nm have been grown directly on the surface of the sensors with nanometric spatial resolution. Remarkably, the nanoSQUIDs are operative over extremely broad ranges of applied magnetic field (-1 T \\lt {μ }0H\\lt 1 T) and temperature (0.3 K \\lt T\\lt 80 K). All these features together have allowed us to perform magnetization measurements under different ambient conditions and to detect the magnetization reversal of individual Co MNPs with magnetic moments (1-30) × {10}6 {μ }{{B}}. Depending on the dimensions and shape of the particles we have distinguished between two different magnetic states yielding different reversal mechanisms. The magnetization reversal is thermally activated over an energy barrier, which has been quantified for the (quasi) single-domain particles. Our measurements serve to show not only the high sensitivity achievable with YBCO nanoSQUIDs, but also demonstrate that these sensors are exceptional magnetometers for the investigation of the properties of individual nanomagnets.

  10. Effects of high source flow and high pumping speed on gas source molecular beam epitaxy / chemical beam epitaxy

    NASA Astrophysics Data System (ADS)

    McCollum, M. J.; Jackson, S. L.; Szafranek, I.; Stillman, G. E.

    1990-10-01

    We report the growth of GaAs by molecular beam epitaxy (MBE), gas source molecular beam epitaxy (GSMBE), and chemical beam epitaxy (CBE) in an epitaxial III-V reactor which features high pumping speed. The system is comprised of a modified Perkin-Elmer 430P molecular beam epitaxy system and a custom gas source panel from Emcore. The growth chamber is pumped with a 7000 1/s (He) diffusion pump (Varian VHS-10 with Monsanto Santovac 5 oil). The gas source panel includes pressure based flow controllers (MKS 1150) allowing triethylaluminum (TEA), triethylgallium (TEG), and trimethylindium (TMI) to be supplied without the use of hydrogen. All source lines, including arsine and phosphine, are maintained below atmospheric pressure. The high pumping speed allows total system flow rates as high as 100 SCCM and V/III ratios as high as 100. The purity of GaAs grown by MBE in this system increases with pumping speed. GaAs layers grown by GSMBE with arsine flows of 10 and 20 SCCM have electron concentrations of 1 × 10 15 cm -3 (μ 77=48,000 cm 2/V·) and 2 × 10 14 cm -3 (μ 77=78,000 cm 2/V·s) respectively. El ectron concentration varies with hydride injector temperature such that the minimum in electron concentration occurs for less than complete cracking. The effect of V/III ratio and the use of a metal eutectic bubbler on residual carrier concentration in GaAs grown by CBE is presented. Intentional Si and Be doping of CBE grown GaAs is demonstrated at a high growth rate of 5.4 μm/h.

  11. Molecular beam study of the interaction of atomic and molecular oxygen with methane

    SciTech Connect

    Liuti, G.; Pirani, F.

    1987-11-01

    Absolute integral cross sections for collisions of CH/sub 4/ with O/sub 2/ molecules and of O/sub 2/ molecules and O(/sup 3/P/sub j/) atoms with CH/sub 4/ are measured as a function of velocity at thermal energies in a molecular beam apparatus. For the O/sub 2/--CH/sub 4/ interaction the glory structure observed allows an analysis in terms of an isotropic potential model and meaningful potential parameter values are obtained. For the O(/sup 3/P/sub j/)--CH/sub 4/ interaction the anisotropy due to the O(/sup 3/P/sub j/) atoms causes a partial quenching of the glory amplitude. Nevertheless a realistic isotropic potential can be extracted from the glory extrema position. The present potential parameters for the O/sub 2/--CH/sub 4/ and the O--CH/sub 4/ interactions can be used to predict realistic parameters for more complicated interactions involving O/sub 2/ molecules and O atoms with other species of interest also in combustion.

  12. Method for Simulating the Thickness Distribution of a Cubic Boron Nitride Film Deposited on a Curved Substrate using Ion-beam-assisted Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Kobayashi, T.; Valizadeh, R.; Colligon, J. S.; Kanematsu, H.; Morisato, K.

    A method for simulating the thickness distribution of cubic boron nitride (cBN) films deposited on a curved substrate using ion-beam-assisted vapor deposition (IBAD) is established and discussed. The deposition conditions are (i) boron arriving rate is 3.2 Å/s, (ii) ion current density is in the range 600-1600 μA/cm2, and (iii) gas composition fed into the ion source is 36% N2 + Ar. It was found that, due to simultaneous deposition and sputtering, the boron resputtering yield (which depends on the ion incident angle during cBN deposition) estimated from experimental data was higher than that of the boron sputtering yield of the BN films with a density of 3.482 g/cm3 calculated by the TRIM code. Using the above empirical boron resputtering yield, it is estimated that in the case of static coating, cBN films would not be formed when the incident angle is more than 40°. However, with continuous waving, the distribution of film thickness improves and the results are consistent with the experimental results. This estimation also agrees with the experimental results of discrete waving deposition within an allowable margin of error

  13. High-purity 3D nano-objects grown by focused-electron-beam induced deposition

    NASA Astrophysics Data System (ADS)

    Córdoba, Rosa; Sharma, Nidhi; Kölling, Sebastian; Koenraad, Paul M.; Koopmans, Bert

    2016-09-01

    To increase the efficiency of current electronics, a specific challenge for the next generation of memory, sensing and logic devices is to find suitable strategies to move from two- to three-dimensional (3D) architectures. However, the creation of real 3D nano-objects is not trivial. Emerging non-conventional nanofabrication tools are required for this purpose. One attractive method is focused-electron-beam induced deposition (FEBID), a direct-write process of 3D nano-objects. Here, we grow 3D iron and cobalt nanopillars by FEBID using diiron nonacarbonyl Fe2(CO)9, and dicobalt octacarbonyl Co2(CO)8, respectively, as starting materials. In addition, we systematically study the composition of these nanopillars at the sub-nanometer scale by atom probe tomography, explicitly mapping the homogeneity of the radial and longitudinal composition distributions. We show a way of fabricating high-purity 3D vertical nanostructures of ˜50 nm in diameter and a few micrometers in length. Our results suggest that the purity of such 3D nanoelements (above 90 at% Fe and above 95 at% Co) is directly linked to their growth regime, in which the selected deposition conditions are crucial for the final quality of the nanostructure. Moreover, we demonstrate that FEBID and the proposed characterization technique not only allow for growth and chemical analysis of single-element structures, but also offers a new way to directly study 3D core-shell architectures. This straightforward concept could establish a promising route to the design of 3D elements for future nano-electronic devices.

  14. Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

    SciTech Connect

    Uedono, Akira; Malinverni, Marco; Martin, Denis; Grandjean, Nicolas; Okumura, Hironori; Ishibashi, Shoji

    2016-06-28

    Vacancy-type defects in Mg-doped GaN were probed using a monoenergetic positron beam. GaN films with a thickness of 0.5–0.7 μm were grown on GaN/sapphire templates using ammonia-based molecular beam epitaxy and characterized by measuring Doppler broadening spectra. Although no vacancies were detected in samples with a Mg concentration [Mg] below 7 × 10{sup 19 }cm{sup −3}, vacancy-type defects were introduced starting at above [Mg] = 1 × 10{sup 20 }cm{sup −3}. The major defect species was identified as a complex between Ga vacancy (V{sub Ga}) and multiple nitrogen vacancies (V{sub N}s). The introduction of vacancy complexes was found to correlate with a decrease in the net acceptor concentration, suggesting that the defect introduction is closely related to the carrier compensation. We also investigated Mg-doped GaN layers grown using In as the surfactant. The formation of vacancy complexes was suppressed in the subsurface region (≤80 nm). The observed depth distribution of defects was attributed to the thermal instability of the defects, which resulted in the introduction of vacancy complexes during the deposition process.

  15. Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

    NASA Astrophysics Data System (ADS)

    Uedono, Akira; Malinverni, Marco; Martin, Denis; Okumura, Hironori; Ishibashi, Shoji; Grandjean, Nicolas

    2016-06-01

    Vacancy-type defects in Mg-doped GaN were probed using a monoenergetic positron beam. GaN films with a thickness of 0.5-0.7 μm were grown on GaN/sapphire templates using ammonia-based molecular beam epitaxy and characterized by measuring Doppler broadening spectra. Although no vacancies were detected in samples with a Mg concentration [Mg] below 7 × 1019 cm-3, vacancy-type defects were introduced starting at above [Mg] = 1 × 1020 cm-3. The major defect species was identified as a complex between Ga vacancy (VGa) and multiple nitrogen vacancies (VNs). The introduction of vacancy complexes was found to correlate with a decrease in the net acceptor concentration, suggesting that the defect introduction is closely related to the carrier compensation. We also investigated Mg-doped GaN layers grown using In as the surfactant. The formation of vacancy complexes was suppressed in the subsurface region (≤80 nm). The observed depth distribution of defects was attributed to the thermal instability of the defects, which resulted in the introduction of vacancy complexes during the deposition process.

  16. Tuning the deposition of molecular graphene nanoribbons by surface functionalization

    NASA Astrophysics Data System (ADS)

    Konnerth, R.; Cervetti, C.; Narita, A.; Feng, X.; Müllen, K.; Hoyer, A.; Burghard, M.; Kern, K.; Dressel, M.; Bogani, L.

    2015-07-01

    We show that individual, isolated graphene nanoribbons, created with a molecular synthetic approach, can be assembled on functionalised wafer surfaces treated with silanes. The use of surface groups with different hydrophobicities allows tuning the density of the ribbons and assessing the products of the polymerisation process.

  17. Quantum state specific reactant preparation in a molecular beam by rapid adiabatic passage

    NASA Astrophysics Data System (ADS)

    Chadwick, Helen; Hundt, P. Morten; van Reijzen, Maarten E.; Yoder, Bruce L.; Beck, Rainer D.

    2014-01-01

    Highly efficient preparation of molecules in a specific rovibrationally excited state for gas/surface reactivity measurements is achieved in a molecular beam using tunable infrared (IR) radiation from a single mode continuous wave optical parametric oscillator (cw-OPO). We demonstrate that with appropriate focusing of the IR radiation, molecules in the molecular beam crossing the fixed frequency IR field experience a Doppler tuning that can be adjusted to achieve complete population inversion of a two-level system by rapid adiabatic passage (RAP). A room temperature pyroelectric detector is used to monitor the excited fraction in the molecular beam and the population inversion is detected and quantified using IR bleaching by a second IR-OPO. The second OPO is also used for complete population transfer to an overtone or combination vibration via double resonance excitation using two spatially separated RAP processes.

  18. Quantum state specific reactant preparation in a molecular beam by rapid adiabatic passage

    SciTech Connect

    Chadwick, Helen Hundt, P. Morten; Reijzen, Maarten E. van; Yoder, Bruce L.; Beck, Rainer D.

    2014-01-21

    Highly efficient preparation of molecules in a specific rovibrationally excited state for gas/surface reactivity measurements is achieved in a molecular beam using tunable infrared (IR) radiation from a single mode continuous wave optical parametric oscillator (cw-OPO). We demonstrate that with appropriate focusing of the IR radiation, molecules in the molecular beam crossing the fixed frequency IR field experience a Doppler tuning that can be adjusted to achieve complete population inversion of a two-level system by rapid adiabatic passage (RAP). A room temperature pyroelectric detector is used to monitor the excited fraction in the molecular beam and the population inversion is detected and quantified using IR bleaching by a second IR-OPO. The second OPO is also used for complete population transfer to an overtone or combination vibration via double resonance excitation using two spatially separated RAP processes.

  19. Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Vuong, T. Q. P.; Cassabois, G.; Valvin, P.; Rousseau, E.; Summerfield, A.; Mellor, C. J.; Cho, Y.; Cheng, T. S.; Albar, J. D.; Eaves, L.; Foxon, C. T.; Beton, P. H.; Novikov, S. V.; Gil, B.

    2017-06-01

    We investigate the opto-electronic properties of hexagonal boron nitride grown by high temperature plasma-assisted molecular beam epitaxy. We combine atomic force microscopy, spectroscopic ellipsometry, and photoluminescence spectroscopy in the deep ultraviolet to compare the quality of hexagonal boron nitride grown either on sapphire or highly oriented pyrolytic graphite. For both substrates, the emission spectra peak at 235 nm, indicating the high optical quality of hexagonal boron nitride grown by molecular beam epitaxy. The epilayers on highly oriented pyrolytic graphite demonstrate superior performance in the deep ultraviolet (down to 210 nm) compared to those on sapphire. These results reveal the potential of molecular beam epitaxy for the growth of hexagonal boron nitride on graphene, and more generally, for fabricating van der Waals heterostructures and devices by means of a scalable technology.

  20. Efficient stimulated slowing and cooling of the magnesium fluoride molecular beam

    NASA Astrophysics Data System (ADS)

    Dai, Dapeng; Xia, Yong; Fang, Yinfei; Xu, Liang; Yin, Yanning; Li, Xingjia; Yang, Xiuxiu; Yin, Jianping

    2015-04-01

    We theoretically investigate the possibility of stimulated light force deceleration and cooling of the diatomic magnesium fluoride molecular beam with near-cycling transitions in the bichromatic standing light wave of high intensity. The weighted degeneracy and force reduction factor are considered due to the behavior of the optical bichromatic force (BCF) in near-cycling transitions with internal degeneracies, and the two-level optical Bloch equations can estimate the actual behavior of the BCF. Our simulation shows that the stimulated force exceeding the spontaneous force by a factor of 2.8 can slow down the molecular beam to several m s-1 within centimeter-scale distance, and this slowing mechanism can eliminate the need of compensation of Doppler shift during the longitudinal deceleration of the molecular beam.

  1. In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy.

    PubMed

    Lee, Jonghoon; Varshney, Vikas; Park, Jeongho; Farmer, Barry L; Roy, Ajit K

    2016-05-05

    Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested.

  2. A non-diaphragm type small shock tube for application to a molecular beam source.

    PubMed

    Yoshimoto, Yuta; Osuka, Kenichi; Miyoshi, Nobuya; Kinefuchi, Ikuya; Takagi, Shu; Matsumoto, Yoichiro

    2013-07-01

    A non-diaphragm type small shock tube was developed for application to a molecular beam source, which can generate beams in the energy range from 1 to several electron volts and beams containing dissociated species such as atomic oxygen. Since repetitive high-frequency operation is indispensable for rapid signal acquisition in beam scattering experiments, the dimensions of the shock tube were miniaturized to reduce the evacuation time between shots. The designed shock tube is 2-4 mm in diameter and can operate at 0.5 Hz. Moreover, a high shock Mach number at the tube end is required for high-energy molecular beam generation. To reduce the shock attenuation caused by the wall boundary layer, which becomes significant in small-diameter tubes, we developed a high-speed response valve employing the current-loop mechanism. The response time of this mechanism is about 100 μs, which is shorter than the rupture time of conventional diaphragms. We show that the current-loop valve generates shock waves with shorter formation distances (about 200-300 mm) than those of conventional shock tubes. In addition, the converging geometry efficiently accelerates shock wave in the small-diameter tubes. The optimal geometry of the shock tube yields shock Mach number around 7, which indicates that the translation energy of molecular beams can exceed 1 eV even in the presence of the real gas effect.

  3. A non-diaphragm type small shock tube for application to a molecular beam source

    NASA Astrophysics Data System (ADS)

    Yoshimoto, Yuta; Osuka, Kenichi; Miyoshi, Nobuya; Kinefuchi, Ikuya; Takagi, Shu; Matsumoto, Yoichiro

    2013-07-01

    A non-diaphragm type small shock tube was developed for application to a molecular beam source, which can generate beams in the energy range from 1 to several electron volts and beams containing dissociated species such as atomic oxygen. Since repetitive high-frequency operation is indispensable for rapid signal acquisition in beam scattering experiments, the dimensions of the shock tube were miniaturized to reduce the evacuation time between shots. The designed shock tube is 2-4 mm in diameter and can operate at 0.5 Hz. Moreover, a high shock Mach number at the tube end is required for high-energy molecular beam generation. To reduce the shock attenuation caused by the wall boundary layer, which becomes significant in small-diameter tubes, we developed a high-speed response valve employing the current-loop mechanism. The response time of this mechanism is about 100 μs, which is shorter than the rupture time of conventional diaphragms. We show that the current-loop valve generates shock waves with shorter formation distances (about 200-300 mm) than those of conventional shock tubes. In addition, the converging geometry efficiently accelerates shock wave in the small-diameter tubes. The optimal geometry of the shock tube yields shock Mach number around 7, which indicates that the translation energy of molecular beams can exceed 1 eV even in the presence of the real gas effect.

  4. Effect of different ion beam energy on properties of amorphous carbon film fabricated by ion beam sputtering deposition (IBSD)

    NASA Astrophysics Data System (ADS)

    Bai, Lichun; Zhang, Guangan; Wu, Zhiguo; Wang, Jun; Yan, Pengxun

    2011-09-01

    Amorphous carbon (a-C) films were fabricated by ion beam sputtering technique. The influence of sputtering ion beam energy on bonding structure, morphologic, mechanical properties, tribological properties and corrosion resistance of a-C films are investigated systematically. Morphology study shows that lowest surface roughness exists for mid-ion beam energy. Improved adhesion is observed for the films that are prepared under high ion beam energy, attributed to film graphitization, low residual stress and mixed interface. Relatively, a-C films prepared with ion beam energy of 2 keV exhibits optimum sp 3 bond content, mechanical properties and corrosion resistance. It is found that the wear rate of DLC films decrease with increased ion beam energy in general, consistent with the varied trend of the H/ E value which has been regarded as a suitable parameter for predicting wear resistance of the coatings. The correlation of the sp 3 bond fraction in the films estimated from Raman spectroscopy with residual stress, nanohardness and corrosion resistance has been established.

  5. ATOMIC AND MOLECULAR PHYSICS: A Novel Mirror for Cold Molecules with a Semi-Gaussian Beam

    NASA Astrophysics Data System (ADS)

    Yin, Ya-Ling; Zhou, Qi; Xia, Yong; Yin, Jian-Ping

    2008-09-01

    We propose a novel mirror for cold molecules with a blue-detuned semi-Gaussian beam and study the dynamic reflection process of cold molecules by Monte Carlo simulation. Our study shows that this mirror can realize a specular reflection of cold iodine molecular beam with a temperature of 30 mK by a reflectivity of 58.2% when the semi-Gaussian laser power is 1.0kW. When a semi-Gaussian CO2 laser beam with a power of 5.8 kW is used, the reflectivity of this mirror can reach about 100%.

  6. Condensed-Phase Mass Fraction in a Supersonic Molecular Beam Containing Clusters

    NASA Astrophysics Data System (ADS)

    Knuth, Eldon L.; Toennies, J. Peter

    2008-12-01

    For a supersonic molecular beam containing clusters, a relatively general and simple conservation-of-energy procedure for deducing from time-of-flight measurements the fraction of the beam in the condensed phase is developed. The procedure is applied to measurements for 4He beams formed by expansions which approach the two-phase region either near the critical point or to the liquid side of the critical point. The deduced values of the mass fraction are correlated using a scaling parameter which was used previously for correlating mean values of cluster sizes formed via fragmentation in free-jet expansions of liquid 4He.

  7. Three-dimensional imaging of the ultracold plasma formed in a supersonic molecular beam

    NASA Astrophysics Data System (ADS)

    Schulz-Weiling, Markus; Grant, Edward

    2015-06-01

    Double-resonant excitation of nitric oxide in a seeded supersonic molecular beam forms a state-selected Rydberg gas that evolves to form an ultracold plasma. This plasma travels with the propagation of the molecular beam in z over a variable distance as great as 600 mm to strike an imaging detector, which records the charge distribution in the dimensions, x and y. The ω1 + ω2 laser crossed molecular beam excitation geometry convolutes the axial Gaussian distribution of NO in the molecular beam with the Gaussian intensity distribution of the perpendicularly aligned laser beam to create an ellipsoidal volume of Rydberg gas. Detected images describe the evolution of this initial density as a function of selected Rydberg gas initial principal quantum number, n0, ω1 laser pulse energy (linearly related to Rydberg gas density, ρ0) and flight time. Low-density Rydberg gases of lower principal quantum number produce uniformly expanding, ellipsoidal charge-density distributions. Increase either of n0 or ρ0 breaks the ellipsoidal symmetry of plasma expansion. The volume bifurcates to form repelling plasma volumes. The velocity of separation depends on n0 and ρ0 in a way that scales uniformly with ρe, the density of electrons formed in the core of the Rydberg gas by prompt Penning ionization. Conditions under which this electron gas drives expansion in the long axis dimension of the ellipsoid favours the formation of counter-propagating shock waves.

  8. Tribological coatings for complex mechanical elements produced by supersonic cluster beam deposition of metal dichalcogenide nanoparticles

    NASA Astrophysics Data System (ADS)

    Piazzoni, C.; Buttery, M.; Hampson, M. R.; Roberts, E. W.; Ducati, C.; Lenardi, C.; Cavaliere, F.; Piseri, P.; Milani, P.

    2015-07-01

    Fullerene-like MoS2 and WS2 nanoparticles can be used as building blocks for the fabrication of fluid and solid lubricants. Metal dichalcogenide films have a very low friction coefficient in vacuum, therefore they have mostly been used as solid lubricants in space and vacuum applications. Unfortunately, their use is significantly hampered by the fact that in the presence of humidity, oxygen and moisture, the low-friction properties of these materials rapidly degrade due to oxidation. The use of closed-cage MoS2 and WS2 nanoparticles may eliminate this problem, although the fabrication of lubricant thin films starting from dichalcogenide nanoparticles is, to date, a difficult task. Here we demonstrate the use of supersonic cluster beam deposition for the coating of complex mechanical elements (angular contact ball bearings) with nanostructured MoS2 and WS2 thin films. We report structural and tribological characterization of the coatings in view of the optimization of tribological performances for aerospace applications.

  9. Three-dimensional Čerenkov tomography of energy deposition from ionizing radiation beams.

    PubMed

    Glaser, Adam K; Voigt, William H A; Davis, Scott C; Zhang, Rongxiao; Gladstone, David J; Pogue, Brian W

    2013-03-01

    Since its discovery during the 1930s the Čerenkov effect (light emission from charged particles traveling faster than the local speed of light in a dielectric medium) has been paramount in the development of high-energy physics research. The ability of the emitted light to describe a charged particle's trajectory, energy, velocity, and mass has allowed scientists to study subatomic particles, detect neutrinos, and explore the properties of interstellar matter. However, to our knowledge, all applications of the process to date have focused on the identification of particles themselves, rather than their effect upon the surroundings through which they travel. Here we explore a novel application of the Čerenkov effect for the recovery of the spatial distribution of ionizing radiation energy deposition in a medium and apply it to the issue of dose determination in medical physics. By capturing multiple projection images of the Čerenkov light induced by a medical linear accelerator x-ray photon beam, we demonstrate the successful three-dimensional tomographic reconstruction of the imparted dose distribution.

  10. Biased Target Ion Beam Deposition and Nanoskiving for Fabricating NiTi Alloy Nanowires

    NASA Astrophysics Data System (ADS)

    Hou, Huilong; Horn, Mark W.; Hamilton, Reginald F.

    2016-12-01

    Nanoskiving is a novel nanofabrication technique to produce shape memory alloy nanowires. Our previous work was the first to successfully fabricate NiTi alloy nanowires using the top-down approach, which leverages thin film technology and ultramicrotomy for ultra-thin sectioning. For this work, we utilized biased target ion beam deposition technology to fabricate nanoscale (i.e., sub-micrometer) NiTi alloy thin films. In contrast to our previous work, rapid thermal annealing was employed for heat treatment, and the B2 austenite to R-phase martensitic transformation was confirmed using stress-temperature and diffraction measurements. The ultramicrotome was programmable and facilitated sectioning the films to produce nanowires with thickness-to-width ratios ranging from 4:1 to 16:1. Energy dispersive X-ray spectroscopy analysis confirmed the elemental Ni and Ti make-up of the wires. The findings exposed the nanowires exhibited a natural ribbon-like curvature, which depended on the thickness-to-width ratio. The results demonstrate nanoskiving is a potential nanofabrication technique for producing NiTi alloy nanowires that are continuous with an unprecedented length on the order of hundreds of micrometers.

  11. Suspended tungsten-based nanowires with enhanced mechanical properties grown by focused ion beam induced deposition.

    PubMed

    Córdoba, Rosa; Lorenzoni, Matteo; Pablo-Navarro, Javier; Magen, C; Perez Murano, Francesc; de Teresa, Jose Maria

    2017-08-21

    The implementation of three-dimensional (3D) nano-objects as building blocks for the next generation of electro-mechanical, memory and sensing nano-devices is at the fore-front of technology. The direct writing of functional 3D nanostructures is feasible by using a method based on focused ion beam induced deposition (FIBID). We use this technique to grow horizontally-suspended tungsten nanowires and then study their nano-mechanical properties by three-point bending method with atomic force microscopy. These measurements reveal that these nanowires exhibit a yield strength up to 12 times higher than that of the bulk tungsten, and near the theoretical value of 0.1 times the Young's modulus (E). We find a size dependence of E that is adequately described by a core-shell model, which has been confirmed by transmission electron microscopy and compositional analyses at the nanoscale. Additionally, we show that experimental resonance frequencies of suspended nanowires (in the MHz range) are in good agreement with theoretical values. These extraordinary mechanical properties are key to designing electro-mechanically-robust nanodevices based on FIBID tungsten nanowires. © 2017 IOP Publishing Ltd.

  12. Three-dimensional Čerenkov tomography of energy deposition from ionizing radiation beams

    PubMed Central

    Glaser, Adam K.; Voigt, William H.A.; Davis, Scott C.; Zhang, Rongxiao; Gladstone, David J.; Pogue, Brian W.

    2013-01-01

    Since its discovery during the 1930’s, the Čerenkov effect (light emission from charged particles traveling faster than the local speed of light in a dielectric medium) has been paramount in the development of high-energy physics research. The ability of the emitted light to describe a charged particle’s trajectory, energy, velocity, and mass has allowed scientists to study subatomic particles, detect neutrinos, and explore the properties of interstellar matter. However, all applications of the process to date have focused on identification of particle’s themselves, rather than their effect upon the surroundings through which they travel. Here, we explore a novel application of the Čerenkov effect for the recovery of the spatial distribution of ionizing radiation energy deposition in a medium, and apply it to the issue of dose determination in medical physics. By capturing multiple projection images of the Čerenkov light induced by a medical linear accelerator (LINAC) x-ray photon beam, we demonstrate the successful three-dimensional (3D) tomographic reconstruction of the imparted dose distribution for the first time. PMID:23455248

  13. Phosphorylation modifies the molecular stability of β-amyloid deposits

    NASA Astrophysics Data System (ADS)

    Rezaei-Ghaleh, Nasrollah; Amininasab, Mehriar; Kumar, Sathish; Walter, Jochen; Zweckstetter, Markus

    2016-04-01

    Protein aggregation plays a crucial role in neurodegenerative diseases. A key feature of protein aggregates is their ubiquitous modification by phosphorylation. Little is known, however, about the molecular consequences of phosphorylation of protein aggregates. Here we show that phosphorylation of β-amyloid at serine 8 increases the stability of its pathogenic aggregates against high-pressure and SDS-induced dissociation. We further demonstrate that phosphorylation results in an elevated number of hydrogen bonds at the N terminus of β-amyloid, the region that is critically regulated by a variety of post-translational modifications. Because of the increased lifetime of phosphorylated β-amyloid aggregates, phosphorylation can promote the spreading of β-amyloid in Alzheimer pathogenesis. Our study suggests that regulation of the molecular stability of protein aggregates by post-translational modifications is a crucial factor for disease progression in the brain.

  14. Phosphorylation modifies the molecular stability of β-amyloid deposits

    PubMed Central

    Rezaei-Ghaleh, Nasrollah; Amininasab, Mehriar; Kumar, Sathish; Walter, Jochen; Zweckstetter, Markus

    2016-01-01

    Protein aggregation plays a crucial role in neurodegenerative diseases. A key feature of protein aggregates is their ubiquitous modification by phosphorylation. Little is known, however, about the molecular consequences of phosphorylation of protein aggregates. Here we show that phosphorylation of β-amyloid at serine 8 increases the stability of its pathogenic aggregates against high-pressure and SDS-induced dissociation. We further demonstrate that phosphorylation results in an elevated number of hydrogen bonds at the N terminus of β-amyloid, the region that is critically regulated by a variety of post-translational modifications. Because of the increased lifetime of phosphorylated β-amyloid aggregates, phosphorylation can promote the spreading of β-amyloid in Alzheimer pathogenesis. Our study suggests that regulation of the molecular stability of protein aggregates by post-translational modifications is a crucial factor for disease progression in the brain. PMID:27072999

  15. Use of molecular beams to support microspheres during plasma coating

    SciTech Connect

    Crane, J.K.; Smith, R.D.; Johnson, W.L.; Letts, S.A.; Korbel, G.R.; Krenick, R.M.

    1980-08-26

    Spherical laser fusion targets can be levitated on beams of Ar or other gas atoms. This is an especially useful and reliable technique for supporting microspheres during plasma coating or plasma etching. The reliability of this technique is principally the result of two things: the success of a special centering device which provides a lateral, stabilizing force on the levitated microspheres; and a gas handling system which is capable of controlling levitation gas flow in the microtorr liter/sec range. We have determined that the operational regime of this device is that of Knudsen's flow. This knowledge of the flow characteristics has been important in developing this device.

  16. Molecular Beam Studies of Hot Atom Chemical Reactions: Reactive Scattering of Energetic Deuterium Atoms

    DOE R&D Accomplishments Database

    Continetti, R. E.; Balko, B. A.; Lee, Y. T.

    1989-02-01

    A brief review of the application of the crossed molecular beams technique to the study of hot atom chemical reactions in the last twenty years is given. Specific emphasis is placed on recent advances in the use of photolytically produced energetic deuterium atoms in the study of the fundamental elementary reactions D + H{sub 2} -> DH + H and the substitution reaction D + C{sub 2}H{sub 2} -> C{sub 2}HD + H. Recent advances in uv laser and pulsed molecular beam techniques have made the detailed study of hydrogen atom reactions under single collision conditions possible.

  17. Characterization of a seeded pulsed molecular beam using the velocity map imaging technique

    NASA Astrophysics Data System (ADS)

    Lietard, Aude; Poisson, Lionel; Mestdagh, Jean-Michel; Gaveau, Marc-André

    2016-11-01

    An experimental study has been performed to characterize the density and the velocity distribution in a pulsed molecular beam generated by a source associating a pulsed valve and an oven placed just downstream. In its operating mode, the flow is alternatively in a supersonic and effusive regime. The Velocity Map Imaging (VMI) technique associated with laser ionization allows measuring the velocity distribution and the density of molecules as a function of time during the expansion. It gives us a very precise insight into the structure of the molecule bunch, and therefore into the nature of the expansion from which the molecular beam is extracted.

  18. Simple Validation of Transient Plume Models Using Molecular Beam-Related Applications

    SciTech Connect

    Woronowicz, M. S.

    2008-12-31

    A simple effort using molecular beam data to compare the results of two different transient free molecule point source models was performed, motivated by a desire to determine the utility of such formulations for a variety of time-dependent applications. These models are evaluated against effusive molecular beam time-of-flight data, as well as behavior observed in pulsed laser ablation experiments and high-fidelity direct simulation Monte Carlo results. Such comparisons indicate that the physical behavior of these time-dependent expansions require taking a surface-enforced directional bias into account. This bias has been absent in a number of investigative formulations, both historical and current.

  19. Ex Situ Thermal Cycle Annealing of Molecular Beam Epitaxy Grown HgCdTe/Si Layers

    DTIC Science & Technology

    2010-01-01

    during the growth process itself, is an effective means to reduce etch pit den- sity (EPD) and improve overall crystal quality. Subjecting CdTe /Si...results of ex situ thermal cycle annealing (TCA) of molecular beam epitaxy grown mercury cadmium telluride (HgCdTe) on Cd (Se)Te/ Si(211) composite...present the results of ex situ thermal cycle annealing (TCA) of molecular beam epitaxy grown mercury cadmium telluride (HgCdTe) on Cd (Se)Te/ Si(211

  20. Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

    SciTech Connect

    Hirama, Kazuyuki Taniyasu, Yoshitaka; Karimoto, Shin-ichi; Krockenberger, Yoshiharu; Yamamoto, Hideki

    2014-03-03

    We investigated the formation of cubic boron nitride (c-BN) thin films on diamond (001) and (111) substrates by ion-beam-assisted molecular beam epitaxy (MBE). The metastable c-BN (sp{sup 3}-bonded BN) phase can be epitaxially grown as a result of the interplay between competitive phase formation and selective etching. We show that a proper adjustment of acceleration voltage for N{sub 2}{sup +} and Ar{sup +} ions is a key to selectively discriminate non-sp{sup 3} BN phases. At low acceleration voltage values, the sp{sup 2}-bonded BN is dominantly formed, while at high acceleration voltages, etching dominates irrespective of the bonding characteristics of BN.