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Sample records for molecular beam deposition

  1. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

    1995-01-01

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

  2. Broadband optical monitoring of filters fabricated using molecular beam deposition

    NASA Astrophysics Data System (ADS)

    Powell Fisher, Shari; Hale, Christopher C.; Muirhead, Ian T.; Mathew, John G. H.; Cornwell, Robert J.

    1990-08-01

    A broadband optical monitoring system to assist with the control of complex filter designs has been implemented on a newly installed Molecular Beam Deposition (MBD) facility which has been adapted for the growth of optical thin films. When depositing a multilayer structure like a Fabry- Perot etalon with very narrow features whose location depends upon a precise optical thickness the broadband optical monitor is an essential addition to process control. In addition to providing the capability to observe the growth of a sensitive optical feature the broadband optical monitor is used to calibrate other process control methods. This saves a considerable amount of processing time and demonstrates the cost effectiveness of such a system. By the judicious use of broadband optical monitoring a very high degree of control and efficiency is added to MBD processing of optical thin films. 1.

  3. Molecular beam deposition of high quality silicon oxide dielectric films

    NASA Astrophysics Data System (ADS)

    Chand, Naresh; Johnson, J. E.; Osenbach, J. W.; Liang, W. C.; Feldman, L. C.; Tsang, W. T.; Krautter, H. W.; Passlack, M.; Hull, R.; Swaminathan, V.

    1995-03-01

    We report a method for depositing clean, uniform and stable SiO x dielectric films with high control and reproducibility. The technique uses a molecular or chemical beam epitaxy system (MBE or CBE). The technique offers many advantages over the conventional methods such as load lock facility, accurate determination of the flux, low background contamination, in-situ process monitoring tools, and heating, rotation and tilting of the substrate. Rutherford backscattering (RBS) shows that the films deposited without oxygen are stoichiometric, 50% oxygen and 50% Si, irrespective of the deposition rate or temperature. Such SiO films have a resistivity of ≥10 13 Ω · cm and a nominal refractive index of 2 at 632.8 nm. The refractive index can be reduced by introducing a controlled amount of oxygen into the chamber to result in SiO x ( x = 1-2) films. The SiO films have uniform density and composition, and are free from voids, or any inclusions of different crystalline or amorphous phases. These SiO films are easy to pattern and their erosion rate is slower than that of SiO 2 deposited by plasma enhanced chemical vapor deposition (PECVD). During 192 h soak in 99°C deionized (DI) water, no moisture absorption was observed in SiO films deposited at a rate of 2 Å/s. Even in films deposited at 11 Å/s, the moisture content after 192 h soak in 99°C DI water was about one third the moisture content of an as-deposited typical PECVD SiO 2 film, indicating that the SiO films are highly resistant to moisture absorption and the film quality improves with reducing deposition rate. The insulating, mechanical and optical properties of SiO x films make them suitable for many applications such as surface passivation, mask for processing and facet coating of lasers. The process can be easily integrated with MBE/CBE which would greatly simplify and improve the III-V semiconductor processing. It may also be possible to deposit such dielectric films by CBE using gaseous compound sources.

  4. Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

    NASA Astrophysics Data System (ADS)

    Comes, Ryan; Gu, Man; Khokhlov, Mikhail; Liu, Hongxue; Lu, Jiwei; Wolf, Stuart A.

    2013-01-01

    Complex oxide epitaxial film growth is a rich and exciting field, owing to the wide variety of physical properties present in oxides. These properties include ferroelectricity, ferromagnetism, spin-polarization, and a variety of other correlated phenomena. Traditionally, high quality epitaxial oxide films have been grown via oxide molecular beam epitaxy or pulsed laser deposition. Here, we present the growth of high quality epitaxial films using an alternative approach, the pulsed electron-beam deposition technique. We demonstrate all three epitaxial growth modes in different oxide systems: Frank-van der Merwe (layer-by-layer); Stranski-Krastanov (layer-then-island); and Volmer-Weber (island). Analysis of film quality and morphology is presented and techniques to optimize the morphology of films are discussed.

  5. Rubidium beam flux dependence of film properties of Ba1 - xRbxBiO3 deposited by molecular-beam epitaxy using distilled ozone

    NASA Astrophysics Data System (ADS)

    Ogihara, M.; Toda, F.; Makita, T.; Abe, H.

    1993-10-01

    We have focused our attention on the dependence of Ba1-xRbxBiO3 (BRBO) film composition ratio and film properties on rubidium-beam-flux intensity. BRBO films were deposited on MgO(100) substrates by molecular-beam epitaxy (MBE) using distilled ozone. Systematic measurements showed that the rubidium content was nearly independent of rubidium-beam-flux intensity in a wide beam-flux range. Therefore, it can be concluded that some degree of self-control of rubidium stoichiometry is actually possible in BRBO film growth by MBE. This study also revealed that the BRBO film properties had strong dependences on rubidium-beam-flux intensity even in the range for self-control of rubudium stoichiometry. Our study also clarified that rubidium-beam flux affects the barium content in the BRBO film.

  6. Ionized cluster beam deposition

    NASA Astrophysics Data System (ADS)

    Kirkpatrick, A. R.

    1983-11-01

    Ionized Cluster Beam (ICB) deposition, a new technique originated by Takagi of Kyoto University in Japan, offers a number of unique capabilities for thin film metallization as well as for deposition of active semiconductor materials. ICB allows average energy per deposited atom to be controlled and involves impact kinetics which result in high diffusion energies of atoms on the growth surface. To a greater degree than in other techniques, ICB involves quantitative process parameters which can be utilized to strongly control the characteristics of films being deposited. In the ICB deposition process, material to be deposited is vaporized into a vacuum chamber from a confinement crucible at high temperature. Crucible nozzle configuration and operating temperature are such that emerging vapor undergoes supercondensation following adiabatic expansion through the nozzle.

  7. Ionized cluster beam deposition

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, A. R.

    1983-01-01

    Ionized Cluster Beam (ICB) deposition, a new technique originated by Takagi of Kyoto University in Japan, offers a number of unique capabilities for thin film metallization as well as for deposition of active semiconductor materials. ICB allows average energy per deposited atom to be controlled and involves impact kinetics which result in high diffusion energies of atoms on the growth surface. To a greater degree than in other techniques, ICB involves quantitative process parameters which can be utilized to strongly control the characteristics of films being deposited. In the ICB deposition process, material to be deposited is vaporized into a vacuum chamber from a confinement crucible at high temperature. Crucible nozzle configuration and operating temperature are such that emerging vapor undergoes supercondensation following adiabatic expansion through the nozzle.

  8. Comparison of Island Formation Between Pulsed Laser Deposition and Molecular Beam Epitaxy:. a Kinetic Monte Carlo Simulation

    NASA Astrophysics Data System (ADS)

    Tan, X.; Zhou, Y. C.; Zheng, X. J.

    Based on a hexagonal lattice which includes deposition, dissociation, and diffusion, we performed a kinetic Monte Carlo model to explore thin film growth via pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) within the submonolayer regime. First and second nearest-neighbor interactions calculated by the Morse potential are taken into account in this case. These simulations show that thin film deposition by PLD is markedly different from that by MBE. With PLD, as pulse duration decreases, the island density increases and the island size decreases. Similarly, at temperature T = 550 K, the scaling function for MBE is rather similar to that of the analytical prediction for a critical island size of i = 2, while the scaling function for PLD changes from an i = 1 behavior to an i = 0 behavior with the decrease in pulse duration.

  9. Molecular beam epitaxy deposition of Gd2O3 thin films on SrTiO3 (100) substrate

    NASA Astrophysics Data System (ADS)

    Wang, Jinxing; Hao, Jinghua; Zhang, Yangyang; Wei, Hongmei; Mu, Juyi

    2016-06-01

    Gd2O3 thin films are grown on the SrTiO3 (100) substrate by molecular beam epitaxy (MBE) deposition. X-ray diffraction (XRD) analysis, conventional transmission electron microscopy (TEM) and aberration-corrected scanning transmission electron microscopy (STEM) are performed to investigate the microstructure of deposited thin films. It is found that the as-deposited thin film possesses a very uniform thickness of ∼40 nm and is composed of single cubic phase Gd2O3 grains. STEM and TEM observations reveal that Gd2O3 thin film grows epitaxially on the SrTiO3 (100) substrate with (001)Gd2O3//(100)STO and [110]Gd2O3//[001]STO orientations. Furthermore, the Gd atoms are found to diffuse into the SrTiO3 substrate for a depth of one unit cell and substitute for the Sr atoms near the interface.

  10. LaAlO3/Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical properties

    NASA Astrophysics Data System (ADS)

    Pelloquin, Sylvain; Saint-Girons, Guillaume; Baboux, Nicolas; Albertini, David; Hourani, Waël; Penuelas, Jose; Grenet, Geneviève; Plossu, Carole; Hollinger, Guy

    2013-01-01

    A study of the structural and electrical properties of amorphous LaAlO3 (LAO)/Si thin films fabricated by molecular beam deposition (MBD) is presented. Two substrate preparation procedures have been explored namely a high temperature substrate preparation technique—leading to a step and terraces surface morphology—and a chemical HF-based surface cleaning. The LAO deposition conditions were improved by introducing atomic plasma-prepared oxygen instead of classical molecular O2 in the chamber. An Au/Ni stack was used as the top electrode for its electrical characteristics. The physico-chemical properties (surface topography, thickness homogeneity, LAO/Si interface quality) and electrical performance (capacitance and current versus voltage and TunA current topography) of the samples were systematically evaluated. Deposition conditions (substrate temperature of 550 °C, oxygen partial pressure settled at 10-6 Torr, and 550 W of power applied to the O2 plasma) and post-depositions treatments were investigated to optimize the dielectric constant (κ) and leakage currents density (JGate at |VGate| = |VFB - 1|). In the best reproducible conditions, we obtained a LAO/Si layer with a dielectric constant of 16, an equivalent oxide thickness of 8.7 Å, and JGate ≈ 10-2A/cm2. This confirms the importance of LaAlO3 as an alternative high-κ for ITRS sub-22 nm technology node.

  11. Controlling field-effect mobility in pentacene-based transistors by supersonic molecular-beam deposition

    SciTech Connect

    Toccoli, T.; Pallaoro, A.; Coppede, N.; Iannotta, S.; De Angelis, F.; Mariucci, L.; Fortunato, G.

    2006-03-27

    We show that pentacene field-effect transistors, fabricated by supersonic molecular beams, have a performance strongly depending on the precursor's kinetic energy (K{sub E}). The major role played by K{sub E} is in achieving highly ordered and flat films. In the range K{sub E}{approx_equal}3.5-6.5 eV, the organic field effect transistor linear mobility increases of a factor {approx}5. The highest value (1.0 cm{sup 2} V{sup -1} s{sup -1}) corresponds to very uniform and flat films (layer-by-layer type growth). The temperature dependence of mobility for films grown at K{sub E}>6 eV recalls that of single crystals (bandlike) and shows an opposite trend for films grown at K{sub E}{<=}5.5 eV.

  12. Experimental cell for molecular beam deposition and magnetic resonance studies of matrix isolated radicals at temperatures below 1 K

    SciTech Connect

    Sheludiakov, S. Ahokas, J.; Vainio, O.; Järvinen, J.; Zvezdov, D.; Vasiliev, S.; Khmelenko, V. V.; Mao, S.; Lee, D. M.

    2014-05-15

    We present the design and performance of an experimental cell constructed for matrix isolation studies of H and D atoms in solid H{sub 2}/D{sub 2} films, which are created by molecular beam deposition at temperatures below 1 K. The sample cell allows sensitive weighing of the films by a quartz microbalance (QM) and their studies by magnetic resonance techniques in a strong magnetic field of 4.6 T. We are able to regulate the deposition rate in the range from 0.01 to 10 molecular layers/s, and measure the thickness with ≈0.2 monolayer resolution. The upper QM electrode serves as a mirror for a 128 GHz Fabry-Perot resonator connected to an electron spin resonance (ESR) spectrometer. H and D atoms were created by RF discharge in situ in the sample cell, and characterized by ESR and electron-nuclear double resonance. From the magnetic resonance measurements we conclude that the films are smooth and provide homogeneous trapping conditions for embedded atoms. The current sample cell design also makes it possible to calibrate the ESR signal and estimate the average and local concentrations of H and D radicals in the film.

  13. High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition

    SciTech Connect

    Ratcliff, C.; Grassman, T. J.; Ringel, S. A.; Carlin, J. A.

    2011-10-03

    Post-growth surface morphologies of high-temperature homoepitaxial GaP films grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have been studied. Smooth, stepped surface morphologies of MBE-grown layers, measured by atomic force microscopy, were found for a wide range of substrate temperatures and P{sub 2}:Ga flux ratios. A MOCVD-based growth study performed under similar conditions to MBE-grown samples shows a nearly identical smooth, step-flow surface morphology, presenting a convergence of growth conditions for the two different methods. The additional understanding of GaP epitaxy gained from this study will impact its use in applications that include GaP-based device technologies, III-V metamorphic buffers, and III-V materials integration with silicon.

  14. Comparison of morphology evolution of Ge(001) homoepitaxial films grown by pulsed laser deposition and molecular-beam epitaxy

    SciTech Connect

    Shin Byungha; Leonard, John P.; McCamy, James W.; Aziz, Michael J.

    2005-10-31

    Using a dual molecular-beam epitaxy (MBE)-pulsed laser deposition (PLD) ultrahigh vacuum chamber, we have conducted the first experiments under identical thermal, background, and surface preparation conditions to compare Ge(001) homoepitaxial growth morphology in PLD and MBE. We find that in PLD with low kinetic energy and in MBE the film morphology evolves in a similar fashion: initially irregularly shaped mounds form, followed by pyramidal mounds with edges of the square-base along the <100> directions; the film roughness and mound separation increase with film thickness. In PLD with high kinetic energy, well-defined pyramidal mounds are not observed and the morphology rather resembles that of an ion-etched Ge(001) surface. The areal feature density is higher for PLD films than for MBE films grown at the same average growth rate and temperature. Furthermore, the dependence upon film thickness of roughness and feature separation differ for PLD and MBE. We attribute these differences to the higher yield of defect generation by energetic species in PLD.

  15. Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

    NASA Technical Reports Server (NTRS)

    Nouhi, A.; Radhakrishnan, G.; Katz, J.; Koliwad, K.

    1988-01-01

    Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

  16. Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeO{sub x} films grown by molecular beam deposition

    SciTech Connect

    Molle, Alessandro; Baldovino, Silvia; Fanciulli, Marco; Tsoutsou, Dimitra; Golias, Evangelos; Dimoulas, Athanasios

    2011-10-15

    Changes in the electron trapping at the interface between Ge substrates and LaGeO{sub x} films grown by atomic O assisted molecular beam deposition are inferred upon post deposition annealing treatment on the as-deposited films from electrically detected magnetic resonance (EDMR) spectroscopy and from the electrical response of Pt/LaGeO{sub x}/Ge metal oxide semiconductor (MOS) capacitors. The improved electrical performance of the MOS capacitors upon annealing is consistent with the EDMR detected reduction of oxide defects which are associated with GeO species in the LaGeO{sub x} layer as evidenced by x-ray photoelectron spectroscopy.

  17. Materials and electrical characterization of molecular beam deposited CeO2 and CeO2/HfO2 bilayers on germanium

    NASA Astrophysics Data System (ADS)

    Brunco, D. P.; Dimoulas, A.; Boukos, N.; Houssa, M.; Conard, T.; Martens, K.; Zhao, C.; Bellenger, F.; Caymax, M.; Meuris, M.; Heyns, M. M.

    2007-07-01

    Properties of CeO2 and CeO2/HfO2 bilayers grown by molecular beam deposition on in situ prepared, oxide-free Ge(100) surfaces are reported here. Deposition is achieved by a simultaneous flux of electron-beam evaporated metal (Ce or Hf) and of remote plasma generated atomic oxygen. These conditions result in an interfacial layer (IL) between the cubic CeO2 and Ge substrate. Electron energy loss spectroscopy shows that this IL is comprised of Ge and O and a small amount of Ce, and x-ray photoelectron spectroscopy suggests that the Ge is in a mix of 2+ and 3+ oxidation states. A comparison of capacitance, conductance, and leakage data shows a higher quality dielectric for 225 °C deposition than for room temperature. However, CeO2-only deposition results in an unacceptably high leakage current due to the small CeO2 band gap, which is remedied by the use of CeO2/HfO2 bilayers. Using the Nicollian-Goetzberger method, interface trap densities in the mid 1011 eV-1 cm-2 are obtained for CeO2/HfO2 gate stacks on both n- and p-Ge.

  18. Investigation of ZnO thin films deposited on ferromagnetic metallic buffer layer by molecular beam epitaxy toward realization of ZnO-based magnetic tunneling junctions

    SciTech Connect

    Belmoubarik, M.; Nozaki, T.; Sahashi, M.; Endo, H.

    2013-05-07

    Deposition of ZnO thin films on a ferromagnetic metallic buffer layer (Co{sub 3}Pt) by molecular beam epitaxy technique was investigated for realization of ZnO-based magnetic tunneling junctions with good quality hexagonal ZnO films as tunnel barriers. For substrate temperature of 600 Degree-Sign C, ZnO films exhibited low oxygen defects and high electrical resistivity of 130 {Omega} cm. This value exceeded that of hexagonal ZnO films grown by sputtering technique, which are used as tunnel barriers in ZnO-MTJs. Also, the effect of oxygen flow during deposition on epitaxial growth conditions and Co{sub 3}Pt surface oxidation was discussed.

  19. Room temperature photoluminescence from In{sub x}Al{sub (1−x)}N films deposited by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Kong, W. Jiao, W. Y.; Kim, T. H.; Brown, A. S.; Mohanta, A.; Roberts, A. T.; Fournelle, J.; Losurdo, M.; Everitt, H. O.

    2014-09-29

    InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10–12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of In{sub x}Al{sub (1−x)}N were comparatively investigated for indium compositions ranging from x = 0.092 to 0.235, including x = 0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.

  20. Silicon Holder For Molecular-Beam Epitaxy

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.

    1993-01-01

    Simple assembly of silicon wafers holds silicon-based charge-coupled device (CCD) during postprocessing in which silicon deposited by molecular-beam epitaxy. Attains temperatures similar to CCD, so hotspots suppressed. Coefficients of thermal expansion of holder and CCD equal, so thermal stresses caused by differential thermal expansion and contraction do not develop. Holder readily fabricated, by standard silicon processing techniques, to accommodate various CCD geometries. Silicon does not contaminate CCD or molecular-beam-epitaxy vacuum chamber.

  1. Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy

    SciTech Connect

    Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella; Boniardi, Mattia; Redaelli, Andrea

    2015-01-12

    Here, we report on the electrical characterization of phase change memory cells containing a Ge{sub 3}Sb{sub 2}Te{sub 6} (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.

  2. Room-temperature ferromagneticlike behavior in Mn-implanted and postannealed InAs layers deposited by molecular beam epitaxy

    SciTech Connect

    Gonzalez-Arrabal, R.; Gonzalez, Y.; Gonzalez, L.; Martin-Gonzalez, M. S.; Munnik, F.

    2009-04-01

    We report on the magnetic and structural properties of Ar- and Mn-implanted InAs epitaxial films grown on GaAs (100) by molecular beam epitaxy and the effect of rapid thermal annealing (RTA) for 30 s at 750 deg. C. Channeling particle induced x-ray emission (PIXE) experiments reveal that after Mn implantation almost all Mn atoms are substitutional in the In site of the InAs lattice, like in a diluted magnetic semiconductor. All of these samples show diamagnetic behavior. However, after RTA treatment the Mn-InAs films exhibit room-temperature magnetism. According to PIXE measurements the Mn atoms are no longer substitutional. When the same set of experiments was performed with Ar as implantation ion, all of the layers present diamagnetism without exception. This indicates that the appearance of room-temperature ferromagneticlike behavior in the Mn-InAs-RTA layer is not related to lattice disorder produced during implantation but to a Mn reaction produced after a short thermal treatment. X-ray diffraction patterns and Rutherford backscattering measurements evidence the segregation of an oxygen-deficient MnO{sub 2} phase (nominally MnO{sub 1.94}) in the Mn-InAs-RTA epitaxial layers which might be the origin of the room-temperature ferromagneticlike response observed.

  3. Molecular-beam scattering

    SciTech Connect

    Vernon, M.F.

    1983-07-01

    The molecular-beam technique has been used in three different experimental arrangements to study a wide range of inter-atomic and molecular forces. Chapter 1 reports results of a low-energy (0.2 kcal/mole) elastic-scattering study of the He-Ar pair potential. The purpose of the study was to accurately characterize the shape of the potential in the well region, by scattering slow He atoms produced by expanding a mixture of He in N/sub 2/ from a cooled nozzle. Chapter 2 contains measurements of the vibrational predissociation spectra and product translational energy for clusters of water, benzene, and ammonia. The experiments show that most of the product energy remains in the internal molecular motions. Chapter 3 presents measurements of the reaction Na + HCl ..-->.. NaCl + H at collision energies of 5.38 and 19.4 kcal/mole. This is the first study to resolve both scattering angle and velocity for the reaction of a short lived (16 nsec) electronic excited state. Descriptions are given of computer programs written to analyze molecular-beam expansions to extract information characterizing their velocity distributions, and to calculate accurate laboratory elastic-scattering differential cross sections accounting for the finite apparatus resolution. Experimental results which attempted to determine the efficiency of optically pumping the Li(2/sup 2/P/sub 3/2/) and Na(3/sup 2/P/sub 3/2/) excited states are given. A simple three-level model for predicting the steady-state fraction of atoms in the excited state is included.

  4. Molecular-beam scattering

    NASA Astrophysics Data System (ADS)

    Vernon, M. F.

    1983-07-01

    The molecular-beam technique has been used in three different experimental arrangements to study a wide range of inter-atomic and molecular forces. Chapter 1 reports results of a low-energy (0.2 kcal/mole) elastic-scattering study of the He-Ar pair potential. The purpose of the study was to accurately characterize the shape of the potential in the well region, by scattering slow He atoms produced by expanding a mixture of He in N2 from a cooled nozzle. Chapter 2 contains measurements of the vibrational predissociation spectra and product translational energy for clusters of water, benzene, and ammonia. The experiments show that most of the product energy remains in the internal molecular motions. Chapter 3 presents measurements of the reaction Na + HC1 (FEMALE) NAC1 + H at collision energies of 5.38 and 19.4 kcal/mole. This is the first study to resolve both scattering angle and velocity for the reaction of a short lived (16 nsec) electronic excited state. Descriptions are given of computer programs written to analyze molecular-beam expansions to extract information characterizing their velocity distributions, and to calculate accurate laboratory elastic-scattering differential cross sections accounting for the finite apparatus resolution. Experimental results which attempted to determine the efficiency of optically pumping the Li(2(2)P/sub 3/2/) and Na(3(2)P/sub 3/2) excited states are given. A simple three-level model for predicting the steady-state fraction of atoms in the excited state is included.

  5. LaAlO{sub 3}/Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical properties

    SciTech Connect

    Pelloquin, Sylvain; Baboux, Nicolas; Albertini, David; Hourani, Waeel; Plossu, Carole; Saint-Girons, Guillaume; Penuelas, Jose; Grenet, Genevieve; Hollinger, Guy

    2013-01-21

    A study of the structural and electrical properties of amorphous LaAlO{sub 3} (LAO)/Si thin films fabricated by molecular beam deposition (MBD) is presented. Two substrate preparation procedures have been explored namely a high temperature substrate preparation technique-leading to a step and terraces surface morphology-and a chemical HF-based surface cleaning. The LAO deposition conditions were improved by introducing atomic plasma-prepared oxygen instead of classical molecular O{sub 2} in the chamber. An Au/Ni stack was used as the top electrode for its electrical characteristics. The physico-chemical properties (surface topography, thickness homogeneity, LAO/Si interface quality) and electrical performance (capacitance and current versus voltage and TunA current topography) of the samples were systematically evaluated. Deposition conditions (substrate temperature of 550 Degree-Sign C, oxygen partial pressure settled at 10{sup -6} Torr, and 550 W of power applied to the O{sub 2} plasma) and post-depositions treatments were investigated to optimize the dielectric constant ({kappa}) and leakage currents density (J{sub Gate} at Double-Vertical-Line V{sub Gate} Double-Vertical-Line = Double-Vertical-Line V{sub FB}- 1 Double-Vertical-Line ). In the best reproducible conditions, we obtained a LAO/Si layer with a dielectric constant of 16, an equivalent oxide thickness of 8.7 A, and J{sub Gate} Almost-Equal-To 10{sup -2}A/cm{sup 2}. This confirms the importance of LaAlO{sub 3} as an alternative high-{kappa} for ITRS sub-22 nm technology node.

  6. Strong affinity of hydrogen for the GaN(000-1) surface: Implications for molecular beam epitaxy and metalorganic chemical vapor deposition

    SciTech Connect

    Northrup, J.E.; Neugebauer, J.

    2004-10-18

    The stabilities of clean and hydrogen covered GaN(000-1) surfaces are determined using density functional theory together with a finite temperature thermodynamics approach. Hydrogen has an extremely high affinity for the N-face surface: Even under ultrahigh vacuum conditions as realized in molecular beam epitaxial growth, with a residual hydrogen pressure of 10{sup -12} atm, the hydrogen terminated surface is, for very N-rich conditions, more stable than any clean surface. A transition to a surface covered by a Ga adlayer is predicted to occur as the Ga chemical potential increases. In typical metalorganic chemical vapor deposition conditions the (000-1) surface is predicted to be covered by 0.75 monolayers of hydrogen. The slower growth rate on the (000-1) surface in comparison to the (0001) surface is attributed to low adsorption of N on the H-covered (000-1) surface.

  7. Delayed Shutters For Dual-Beam Molecular Epitaxy

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J.; Liu, John L.; Hancock, Bruce

    1989-01-01

    System of shutters for dual-molecular-beam epitaxy apparatus delays start of one beam with respect to another. Used in pulsed-beam equipment for deposition of low-dislocation layers of InAs on GaAs substrates, system delays application of arsenic beam with respect to indium beam to assure proper stoichiometric proportions on newly forming InAs surface. Reflectance high-energy electron diffraction (RHEED) instrument used to monitor condition of evolving surface of deposit. RHEED signal used to time pulsing of molecular beams in way that minimizes density of defects and holds lattice constant of InAs to that of GaAs substrate.

  8. Photoelectron photoion molecular beam spectroscopy

    SciTech Connect

    Trevor, D.J.

    1980-12-01

    The use of supersonic molecular beams in photoionization mass spectroscopy and photoelectron spectroscopy to assist in the understanding of photoexcitation in the vacuum ultraviolet is described. Rotational relaxation and condensation due to supersonic expansion were shown to offer new possibilities for molecular photoionization studies. Molecular beam photoionization mass spectroscopy has been extended above 21 eV photon energy by the use of Stanford Synchrotron Radiation Laboratory (SSRL) facilities. Design considerations are discussed that have advanced the state-of-the-art in high resolution vuv photoelectron spectroscopy. To extend gas-phase studies to 160 eV photon energy, a windowless vuv-xuv beam line design is proposed.

  9. Chopped molecular beam multiplexing system

    NASA Technical Reports Server (NTRS)

    Adams, Billy R. (Inventor)

    1986-01-01

    The integration of a chopped molecular beam mass spectrometer with a time multiplexing system is described. The chopping of the molecular beam is synchronized with the time intervals by a phase detector and a synchronous motor. Arithmetic means are generated for phase shifting the chopper with respect to the multiplexer. A four channel amplifier provides the capacity to independently vary the baseline and amplitude in each channel of the multiplexing system.

  10. Characterization of high-{kappa} LaLuO{sub 3} thin film grown on AlGaN/GaN heterostructure by molecular beam deposition

    SciTech Connect

    Yang Shu; Huang Sen; Chen Hongwei; Chen, Kevin J.; Schnee, Michael; Zhao Qingtai; Schubert, Juergen

    2011-10-31

    We report the study of high-dielectric-constant (high-{kappa}) dielectric LaLuO{sub 3} (LLO) thin film that is grown on AlGaN/GaN heterostructure by molecular beam deposition (MBD). The physical properties of LLO on AlGaN/GaN heterostrucure have been investigated with atomic force microscopy, x-ray photoelectron spectroscopy, and TEM. It is revealed that the MBD-grown 16 nm-thick LLO film is polycrystalline with a thin ({approx}2 nm) amorphous transition layer at the LLO/GaN interface. The bandgap of LLO is derived as 5.3 {+-} 0.04 eV from O1s energy loss spectrum. Capacitance-voltage (C-V) characteristics of a Ni-Au/LLO/III-nitride metal-insulator-semiconductor diode exhibit small frequency dispersion (<2%) and reveal a high effective dielectric constant of {approx}28 for the LLO film. The LLO layer is shown to be effective in suppressing the reverse and forward leakage current in the MIS diode. In particular, the MIS diode forward current is reduced by 7 orders of magnitude at a forward bias of 1 V compared to a conventional Ni-Au/III-nitride Schottky diode.

  11. Optical and structural properties of microcrystalline GaN on an amorphous substrate prepared by a combination of molecular beam epitaxy and metal–organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu; Park, Kwangwook; Kim, Ci-Hyun; Lee, Dong-Seon; Jho, Young-Dahl; Bae, Si-Young; Lee, Yong-Tak

    2016-05-01

    Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.

  12. Energy band alignment of atomic layer deposited HfO{sub 2} on epitaxial (110)Ge grown by molecular beam epitaxy

    SciTech Connect

    Hudait, M. K.; Zhu, Y.; Maurya, D.; Priya, S.

    2013-03-04

    The band alignment properties of atomic layer HfO{sub 2} film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the HfO{sub 2} film. The measured valence band offset value of HfO{sub 2} relative to (110)Ge was 2.28 {+-} 0.05 eV. The extracted conduction band offset value was 2.66 {+-} 0.1 eV using the bandgaps of HfO{sub 2} of 5.61 eV and Ge bandgap of 0.67 eV. These band offset parameters and the interface chemical properties of HfO{sub 2}/(110)Ge system are of tremendous importance for the design of future high hole mobility and low-power Ge-based metal-oxide transistor devices.

  13. Optical and structural properties of microcrystalline GaN on an amorphous substrate prepared by a combination of molecular beam epitaxy and metal-organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu; Park, Kwangwook; Kim, Ci-Hyun; Lee, Dong-Seon; Jho, Young-Dahl; Bae, Si-Young; Lee, Yong-Tak

    2016-05-01

    Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.

  14. Ion beam sputter deposited diamond like films

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Rutledge, S. K.

    1982-01-01

    A single argon ion beam source was used to sputter deposit carbon films on fused silica, copper, and tantalum substrates under conditions of sputter deposition alone and sputter deposition combined with simultaneous argon ion bombardment. Simultaneously deposited and ion bombarded carbon films were prepared under conditions of carbon atom removal to arrival ratios of 0, 0.036, and 0.71. Deposition and etch rates were measured for films on fused silica substrates. Resulting characteristics of the deposited films are: electrical resistivity of densities of 2.1 gm/cu cm for sputter deposited films and 2.2 gm/cu cm for simultaneously sputter deposited and Ar ion bombarded films. For films approximately 1700 A thick deposited by either process and at 5550 A wavelength light the reflectance was 0.2, the absorptance was 0.7, the absorption coefficient was 67,000 cm to the -1 and the transmittance was 0.1.

  15. Tokomak disruption runaway electron beam energy deposition

    NASA Astrophysics Data System (ADS)

    Lei, Yian

    2012-10-01

    Disruption is one of the major concerns in magnetic confinement fusion (MCF) research. People believe the energetic runaway electron beam can damage the first wall by depositing most of its energy to certain region as heat, melting the wall. However, as the energy of the beam electron is very high (up to 50 MeV), most of the beam energy should be converted as gamma radiation and escape, and the fraction of thermal energy deposition is relatively small. We will calculate the runaway electron energy deposition in typical first wall configurations in ITER disruption scenario, and give the temperature profile of the wall. We will also calculate the bremsstrahlung gamma ray spectra of the beam and discuss the consequences.

  16. Mechanism of ion-beam-induced deposition

    SciTech Connect

    Dubner, A.D.

    1990-01-01

    Ion-beam induced deposition (IBID) is described as well as the system developed for in-situ measurement of IBID. Gold films were deposited on quartz crystal microbalances (QCM) by decomposing C{sub 7}H{sub 7}F{sub 6}O{sub 2}Au (dimethyl gold hexafluoroacetylacetonate, or DMG (hfac)) with 2- to 10-keV Xe{sup +}, Kr{sup +}, Ar{sup +}, Ne{sup +}, or He{sup +} ion beams. A conceptual model for ion beam induced deposition is presented which relates the net deposition yield to the gas adsorption, the decomposition cross section, and the sputter yield. To test this model, the deposition rate with 5-keV Ar{sup +} ions was measured in-situ as a function of ion current, gas pressure, and substrate temperature using the QCM. The deposition yield (mass deposited per incident ion) increased with increasing gas pressure and decreasing substrate temperature. The QCM was also used to measure the adsorption of DMG (hfac). Results demonstrate that the variation in deposition yield with temperature and pressure was proportional to the number of DMG (hfac) molecules adsorbed per cm{sup 2}, and verify the conceptual model. Based on the observed correlation between deposition yield and adsorption, a decomposition cross section for 5-keV argon ions of 2 {times} 10{sup {minus}13} cm{sup 2} was estimated.

  17. Molecular Models for DSMC Simulations of Metal Vapor Deposition

    SciTech Connect

    Venkattraman, A.; Alexeenko, A. A.

    2011-05-20

    The direct simulation Monte Carlo (DSMC) method is applied here to model the electron-beam (e-beam) physical vapor deposition of copper thin films. A suitable molecular model for copper-copper interactions have been determined based on comparisons with experiments for a 2D slit source. The model for atomic copper vapor is then used in axi-symmetric DSMC simulations for analysis of a typical e-beam metal deposition system with a cup crucible. The dimensional and non-dimensional mass fluxes obtained are compared for two different deposition configurations with non-uniformity as high as 40% predicted from the simulations.

  18. Ion beam deposition in materials research

    NASA Astrophysics Data System (ADS)

    Zuhr, R. A.; Pennycook, S. J.; Noggle, T. S.; Herbots, N.; Haynes, T. E.; Appleton, B. R.

    1989-02-01

    Ion beam deposition (IBD) is the direct formation of thin films using a low-energy (tens of eV) mass-analyzed ion beam. The process allows depositions in which the energy, isotopic species, deposition rate, defect production, and many other beam and sample parameters can be accurately controlled. This paper will review recent research at ORNL on the IBD process and the effects of deposition parameters on the materials properties of deposited thin films, epitaxial layers, and isotopic heterostructures. A variety of techniques including ion scattering/channeling, cross-sectional transmission electron microscopy, scanning electron microscopy, and Auger spectroscopy has been used for analysis. The fabrication of isotopic heterostructures of 74Ge and 30Si will be discussed, as well as the fabrication of metal and semiconductor overlayers on Si and Ge. The use of IBD for low-temperature epitaxy of 30Si on Si and 76Ge on Ge will be presented. The use of self-ion sputter cleaning and in situ reactive ion cleaning as methods for preparing single-crystal substrates for epitaxial deposition will be discussed. Examples of IBD formation of oxides and suicides on Si at low temperatures will also be presented.

  19. Titanium nitride deposited by dual ion beams

    NASA Astrophysics Data System (ADS)

    Ito, H.; Yoshida, Y.; Yamaji, S.; Maeyama, Y.; Ina, T.; Minowa, Y.

    1989-03-01

    Titanium nitride films have been prepared by the dual ion beam (DIB) deposition technique, which consists of the ionized cluster beam (ICB) and the ionized gas beam (IGB). As the source of ICB, vaporized titanium is ejected through the multinozzle of the crucible into a high vacuum chamber and is cooled and clustered by adiabatic expansion. The titanium clusters thus obtained are partially ionized in an electron shower and accelerated to the substrate. At the same time, as the source of IGB, nitrogen molecules are partially ionized, excited and decomposed in an electron shower and also accelerated to the substrate. These two beams collide and combine together on their way to the substrate. The characteristics of the ion current density and the properties of titanium nitride films are investigated. It is found that the DIB technique has a great advantage in preparing titanium nitride films of various crystalline structures from TiN to Ti 2N at a low temperature with a high deposition rate over a large substrate. Therefore, the chemical reaction is enhanced by the irradiation of the ionized and excited gases and the migration of ionized clusters on the substrate.

  20. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1986-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  1. Molecular-Beam-Epitaxy Program

    NASA Technical Reports Server (NTRS)

    Sparks, Patricia D.

    1988-01-01

    Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.

  2. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1985-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  3. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanisms and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  4. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  5. Microstructural evolution during ion beam assisted deposition

    SciTech Connect

    Hubler, G.K.

    1995-12-31

    The advantages of energetic deposition are low temperature processing, oriented or single crystal films, high phase purity, high density and good adhesion to substrates. The time and spatial scales over which the atoms arrange themselves on a surface are not easy accessed experimentally. Therefore, these advantages are customarily verified by ex-situ examination of films after deposition is complete, which gives little information on atomic scale processes that lead to the listed advantages. The addition of energy to the deposition flux effects surface processes that are otherwise only controllable by changing the substrate temperature. Thus, understanding the mechanisms by which energetic atoms alter surface processes in analogy with thermal effects is of paramount interest for optimization of the deposition parameters. This review summarizes the state of knowledge on the effects of energetic ions on film formation. For high quality, defect free films, the energy must be controlled in the energy region of 5 eV to 30 eV. Below about 5 eV, the energy is ineffective for changing the physical processes, and above about 30 eV, defects are added to the film by displacement damage that cannot anneal out due to low temperature of the deposition. Models for the composition and chemistry of films energetically deposited are progressing well, while models for prediction of the phases that form are almost nonexistent. Molecular dynamics provide the best information, but only a handful of cases have been simulated.

  6. 14th international symposium on molecular beams

    SciTech Connect

    Not Available

    1992-01-01

    This report discusses research being conducted with molecular beams. The general topic areas are as follows: Clusters I; reaction dynamics; atomic and molecular spectroscopy; clusters II; new techniques; photodissociation dynamics; and surfaces.

  7. 14th international symposium on molecular beams

    SciTech Connect

    Not Available

    1992-09-01

    This report discusses research being conducted with molecular beams. The general topic areas are as follows: Clusters I; reaction dynamics; atomic and molecular spectroscopy; clusters II; new techniques; photodissociation & dynamics; and surfaces.

  8. Dual ion beam assisted deposition of biaxially textured template layers

    SciTech Connect

    Groves, James R.; Arendt, Paul N.; Hammond, Robert H.

    2005-05-31

    The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be deposited without degradation of the desired properties by the material. The ability to deposit thicker layers without loss of properties provides a significantly broader deposition window for the process.

  9. Investigation on the electrical transport properties of highly (00l)-textured Sb{sub 2}Te{sub 3} films deposited by molecular beam epitaxy

    SciTech Connect

    Zhang, Xiangpeng; Zeng, Zhigang E-mail: zhiyuhu@shu.edu.cn; Shen, Chao; Wang, Zhichong; Lin, Cong; Zhang, Ziqiang; Hu, Zhiyu E-mail: zhiyuhu@shu.edu.cn

    2014-01-14

    Highly (00l)-textured antimony telluride films were fabricated using molecular beam epitaxy (MBE) on Si (111) substrate at 280 °C. X-ray diffraction analysis implying the samples have good crystalline quality, simultaneously, the grain sizes coarsening with increasing thickness. The results of Hall coefficient measurement demonstrated that the carrier concentration and mobility are strongly affected by grain boundaries and microcrystalline internal defects. It was found that the grain boundaries play a primary factor influencing the carrier concentration in thinner film. At room temperature, the results in a maximum mobility value of 305 cm{sup 2}/Vs for 121-nm-thick film, and the electrical conductivity increased from 425.7 S/cm to 1036 S/cm as the thickness varied from 28 nm to 121 nm. In the range of room temperature to 150 °C, the resistivity almost linearly increased with increasing temperature. This may be explained by low concentration of impurities or defects and shallow impurity band. For difference thickness films, temperature coefficients of resistivity are substantially equal, and the values are about 3 ∼ 4 μΩ⋅cm/K.

  10. Focused electron beam induced deposition of pure SIO II

    NASA Astrophysics Data System (ADS)

    Perentes, Alexandre; Hoffmann, Patrik; Munnik, Frans

    2007-02-01

    Focused electron beam induced processing (FEBID) equipments are the "all in one" tools for high resolution investigation, and modification of nano-devices. Focused electron beam induced deposition from a gaseous precursor usually results in a nano-composite sub-structured material, in which the interesting material is embedded in an amorphous carbonaceous matrix. Using the Hydrogen free tetraisocyanatosilane Si(NCO) 4 molecule as Si source, we show how a controlled oxygen flux, simultaneously injected with the precursor vapors, causes contaminants to vanish from the FEB deposits obtained and leads to the deposition of pure SiO II. The chemical composition of the FEBID material could be controlled from SiC IINO 3 to SiO II, the latter containing undetectable foreign element contamination. The [O II] / [TICS] ratio needed to obtain SiO II in our FEB deposition equipment is larger than 300. The evolution of the FEBID material chemical composition is presented as function of the [O II] / [TICS] molecular flux ratios. A hypothetical decomposition pathway of this silane under these conditions is discussed based on the different species formed under electron bombardment of TICS. Transmission electron microscopy investigations demonstrated that the deposited oxide is smooth (roughness sub 2nm) and amorphous. Infrared spectroscopy confirmed the low concentration of hydroxyl groups. The Hydrogen content of the deposited oxide, measured by elastic recoil detection analysis, is as low as 1 at%. 193nm wavelength AIMS investigations of 125nm thick SiO II pads (obtained with [O II] / [TICS] = 325) showed an undetectable light absorption.

  11. Focused electron beam induced deposition: A perspective

    PubMed Central

    Porrati, Fabrizio; Schwalb, Christian; Winhold, Marcel; Sachser, Roland; Dukic, Maja; Adams, Jonathan; Fantner, Georg

    2012-01-01

    Summary Background: Focused electron beam induced deposition (FEBID) is a direct-writing technique with nanometer resolution, which has received strongly increasing attention within the last decade. In FEBID a precursor previously adsorbed on a substrate surface is dissociated in the focus of an electron beam. After 20 years of continuous development FEBID has reached a stage at which this technique is now particularly attractive for several areas in both, basic and applied research. The present topical review addresses selected examples that highlight this development in the areas of charge-transport regimes in nanogranular metals close to an insulator-to-metal transition, the use of these materials for strain- and magnetic-field sensing, and the prospect of extending FEBID to multicomponent systems, such as binary alloys and intermetallic compounds with cooperative ground states. Results: After a brief introduction to the technique, recent work concerning FEBID of Pt–Si alloys and (hard-magnetic) Co–Pt intermetallic compounds on the nanometer scale is reviewed. The growth process in the presence of two precursors, whose flux is independently controlled, is analyzed within a continuum model of FEBID that employs rate equations. Predictions are made for the tunability of the composition of the Co–Pt system by simply changing the dwell time of the electron beam during the writing process. The charge-transport regimes of nanogranular metals are reviewed next with a focus on recent theoretical advancements in the field. As a case study the transport properties of Pt–C nanogranular FEBID structures are discussed. It is shown that by means of a post-growth electron-irradiation treatment the electronic intergrain-coupling strength can be continuously tuned over a wide range. This provides unique access to the transport properties of this material close to the insulator-to-metal transition. In the last part of the review, recent developments in mechanical strain

  12. Molecular beams: our legacy from Otto Stern

    NASA Astrophysics Data System (ADS)

    Ramsey, N. F.

    1988-06-01

    It is an honor to contribute to this celebration of the hundredth anniversary of the birth of Otto Stern, who developed molecular beams to become one of the most nowerful and fruitful physics research methods.

  13. Orbiting molecular-beam laboratory

    NASA Technical Reports Server (NTRS)

    Outlaw, R. A.; Brock, F. J.

    1977-01-01

    The composition of the atmosphere within the planned orbital envelope of the Space Shuttle and the velocity necessary to maintain a stable orbit within that envelope provide unique conditions for forming a high-purity, moderate energy beam (about 5 eV) of atomic oxygen. At 500 km, for example, atomic oxygen comprises approximately 90% of the atmosphere. Since the mean thermal speed of the ambient atomic oxygen is substantially less than the orbital speed, a high-purity beam can be generated by sweeping through the gas with a series of beam-forming truncated conical shells. Characteristics of the beam, including energy distribution, flux, and purity variation with orbital altitude and methods for lowering the mean energy, are presented. Gas-surface interaction experiments that have been proposed for this laboratory are also discussed.

  14. Electron beam deposition for nanofabrication: Insights from surface science

    NASA Astrophysics Data System (ADS)

    Wnuk, J. D.; Rosenberg, S. G.; Gorham, J. M.; van Dorp, W. F.; Hagen, C. W.; Fairbrother, D. H.

    2011-02-01

    Electron beam induced deposition (EBID) is a direct-write lithographic technique that utilizes the dissociation of volatile precursors by a focused electron beam in a low vacuum environment to create nanostructures. Notable advantages of EBID over competing lithographic techniques are that it is a single step process that allows three-dimensional free-standing structures to be created, including features with single-nanometer scale dimensions. However, despite the inherent advantages of EBID, scientific and technological issues are impeding its development as an industrial nanofabrication tool. Perhaps the greatest single limitation of EBID is that metal-containing nanostructures deposited from organometallic precursors typically possess unacceptable levels of organic contamination which adversely affects the material's properties. In addition to the issue of purity, there is also a lack of understanding and quantitative information on the fundamental surface reactions and reaction cross-sections that are responsible for EBID. In this prospective, we describe how surface analytical techniques have begun to provide mechanistic and kinetic insights into the molecular level processes associated with EBID. This has been achieved by observing the effect of electron irradiation on nanometer thick films of organometallic precursors adsorbed onto solid substrates at low temperatures (< 200 K) under ultra-high vacuum conditions. Experimental observations include probing changes in surface composition, metal oxidation state, and the evolution of volatile species. Insights into surface reactions associated with purification strategies are also detailed. We also discuss unresolved scientific challenges and opportunities for future EBID research.

  15. Patterned electrochemical deposition of copper using an electron beam

    SciTech Connect

    Heijer, Mark den; Shao, Ingrid; Reuter, Mark C.; Ross, Frances M.; Radisic, Alex

    2014-02-01

    We describe a technique for patterning clusters of metal using electrochemical deposition. By operating an electrochemical cell in the transmission electron microscope, we deposit Cu on Au under potentiostatic conditions. For acidified copper sulphate electrolytes, nucleation occurs uniformly over the electrode. However, when chloride ions are added there is a range of applied potentials over which nucleation occurs only in areas irradiated by the electron beam. By scanning the beam we control nucleation to form patterns of deposited copper. We discuss the mechanism for this effect in terms of electron beam-induced reactions with copper chloride, and consider possible applications.

  16. High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices

    NASA Astrophysics Data System (ADS)

    Chiu, Yu Sheng; Liao, Jen Ting; Lin, Yueh Chin; Chien Liu, Shin; Lin, Tai Ming; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2016-05-01

    High-κ cerium oxide (CeO2) was applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a gate insulator and a passivation layer by molecular beam deposition (MBD) for high-power applications. From capacitance-voltage (C-V) measurement results, the dielectric constant of the CeO2 film was 25.2. The C-V curves showed clear accumulation and depletion behaviors with a small hysteresis (20 mV). Moreover, the interface trap density (D it) was calculated to be 5.5 × 1011 eV-1 cm-2 at 150 °C. A CeO2 MOS-HEMT was fabricated and demonstrated a low subthreshold swing (SS) of 87 mV/decade, a high ON/OFF drain current ratio (I ON/I OFF) of 1.14 × 109, and a low gate leakage current density (J leakage) of 2.85 × 10-9 A cm-2 with an improved dynamic ON-resistance (R ON), which is about one order of magnitude lower than that of a conventional HEMT.

  17. Comparison of electrical properties and deep traps in p-Al{sub x}Ga{sub 1-x}N grown by molecular beam epitaxy and metal organic chemical vapor deposition

    SciTech Connect

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Dabiran, A. M.; Chow, P. P.; Wowchak, A. M.; Lee, In-Hwan; Ju, Jin-Woo; Pearton, S. J.

    2009-10-01

    The electrical properties, admittance spectra, microcathodoluminescence, and deep trap spectra of p-AlGaN films with an Al mole fraction up to 45% grown by both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were compared. The ionization energy of Mg increases from 0.15 to 0.17 eV in p-GaN to 0.3 eV in 45% Al p-AlGaN. In p-GaN films grown by MBE and MOCVD and in MOCVD grown p-AlGaN, we observed additional acceptors with a concentration an order lower than that of Mg acceptors, with a higher hole capture cross section and an ionization energy close to that of Mg. For some of the MBE grown p-AlGaN, we also detected the presence of additional acceptor centers, but in that case the centers were located near the p-AlGaN layer interface with the semi-insulating AlGaN buffer and showed activation energies considerably lower than those of Mg.

  18. Molecular-beam spectroscopy of interhalogen molecules

    SciTech Connect

    Sherrow, S.A.

    1983-08-01

    A molecular-beam electric-resonance spectrometer employing a supersonic nozzle source has been used to obtain hyperfine spectra of /sup 79/Br/sup 35/Cl. Analyses of these spectra and of microwave spectra published by other authors have yielded new values for the electric dipole moment and for the nuclear quadrupole coupling constants in this molecule. The new constants are significantly different from the currently accepted values. Van der Waals clusters containing chlorine monofluoride have been studied under various expansion conditions by the molecular-beam electric-deflection method. The structural possibilities indicated by the results are discussed, and cluster geometries are proposed.

  19. Molecular beam mass spectrometer development

    NASA Technical Reports Server (NTRS)

    Brock, F. J.; Hueser, J. E.

    1976-01-01

    An analytical model, based on the kinetics theory of a drifting Maxwellian gas is used to determine the nonequilibrium molecular density distribution within a hemispherical shell open aft with its axis parallel to its velocity. The concept of a molecular shield in terrestrial orbit above 200 km is also analyzed using the kinetic theory of a drifting Maxwellian gas. Data are presented for the components of the gas density within the shield due to the free stream atmosphere, outgassing from the shield and enclosed experiments, and atmospheric gas scattered off a shield orbiter system. A description is given of a FORTRAN program for computating the three dimensional transition flow regime past the space shuttle orbiter that employs the Monte Carlo simulation method to model real flow by some thousands of simulated molecules.

  20. Deposition of reactively ion beam sputtered silicon nitride coatings

    NASA Technical Reports Server (NTRS)

    Grill, A.

    1982-01-01

    An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

  1. Zeeman-Sisyphus Deceleration of Molecular Beams

    NASA Astrophysics Data System (ADS)

    Fitch, Noah; Tarbutt, Mike

    2016-05-01

    Ultracold molecules are useful for testing fundamental physics and studying strongly-interacting quantum systems. One production method is via direct laser cooling in a magneto-optical trap (MOT). In this endeavor, one major challenge is to produce molecules below the MOT capture velocity. Established molecular beam deceleration techniques are poorly suited because they decelerate only a small fraction of a typical molecular pulse. Direct laser cooling is a natural choice, but is also problematic due to transverse heating and the associated molecule loss. I will present a new technique that we are developing, which we call Zeeman-Sisyphus deceleration and which shows great promise for preparing molecular beams for MOT loading. This technique decelerates molecules using a linear array of permanent magnets, along with lasers that periodically optically pump molecules between weak and strong-field seeking quantum states. Being time-independent, this method is well-suited for temporally extended molecular beams. Simultaneous deceleration and transverse guiding makes this approach attractive as an alternative to direct laser cooling. I will present our development of the Zeeman-Sisyphus decelerator and its application to a molecular MOT of CaF and an ultracold fountain of YbF.

  2. Properties of e-beam deposited Pt nano-interconnects

    NASA Astrophysics Data System (ADS)

    Rotkina, Lolita

    2003-03-01

    Connecting nano-objects to macroscopic leads is a tough technical problem of nanotechnology. In this work direct electron beam induced deposition of Pt from metal-organic precursor has been used to form nano-interconnects. For example, nanotubes and nanowires, silicide needle-like islands, all-oxide semiconducting nanocrystals and other nanostructures have been wired to metal leads to perform transport measurements. Material properties of deposited nano-interconnects are in focus of this study. Chemical composition of deposit has been studied by Auger spectroscopy and Transmission Electron Microscopy. Content of the deposited material was shown to be independent on the beam current. The content was contingent on the rate of pumping-out of decomposed precursor residue. Conductivity of the nano-interconnects have been improved dramatically by annealing in low-pressure neutral atmosphere. Structural and material properties of deposit, annealed in the temperature range 100 to 400 C, were studied.

  3. Molecular Beam Epitaxy Growth of Iron Phthalocyanine Nanostructures

    SciTech Connect

    Debnath, A. K.; Samanta, S.; Singh, Ajay; Aswal, D. K.; Gupta, S. K.; Yakhmi, J. V.

    2009-06-29

    FePc films of different thickness have been deposited by molecular beam epitaxy (MBE) as a function of substrate temperature (25-300 deg. C) and deposition rate (0.02-0.07 nm/s). The morphology of a 60 nm alpha-phase film has been tuned from nanobrush (nearly parallel nanorods aligned normal to the substrate plane) to nanoweb (nanowires forming a web-like structure in the plane of the substrate) by changing the deposition rate from 0.02 to 0.07 nm/s. We propose growth mechanisms of nanoweb and nanobrush morphology based on the van der Waals (vdW) epitaxy. For air exposed FePc films I-V hysteresis was observed at 300 K and it is attributed to surface traps created by chemisorbed oxygen.

  4. Use of beam deflection to control an electron beam wire deposition process

    NASA Technical Reports Server (NTRS)

    Taminger, Karen M. (Inventor); Hofmeister, William H. (Inventor); Hafley, Robert A. (Inventor)

    2013-01-01

    A method for controlling an electron beam process wherein a wire is melted and deposited on a substrate as a molten pool comprises generating the electron beam with a complex raster pattern, and directing the beam onto an outer surface of the wire to thereby control a location of the wire with respect to the molten pool. Directing the beam selectively heats the outer surface of the wire and maintains the position of the wire with respect to the molten pool. An apparatus for controlling an electron beam process includes a beam gun adapted for generating the electron beam, and a controller adapted for providing the electron beam with a complex raster pattern and for directing the electron beam onto an outer surface of the wire to control a location of the wire with respect to the molten pool.

  5. Direct simulation Monte Carlo modeling of e-beam metal deposition

    SciTech Connect

    Venkattraman, A.; Alexeenko, A. A.

    2010-07-15

    Three-dimensional direct simulation Monte Carlo (DSMC) method is applied here to model the electron-beam physical vapor deposition of copper thin films. Various molecular models for copper-copper interactions have been considered and a suitable molecular model has been determined based on comparisons of dimensional mass fluxes obtained from simulations and previous experiments. The variable hard sphere model that is determined for atomic copper vapor can be used in DSMC simulations for design and analysis of vacuum deposition systems, allowing for accurate prediction of growth rates, uniformity, and microstructure.

  6. Physics with fast molecular-ion beams

    SciTech Connect

    Kanter, E.P.

    1980-01-01

    Fast (MeV) molecular-ion beams provide a unique source of energetic projectile nuclei which are correlated in space and time. The recognition of this property has prompted several recent investigations of various aspects of the interactions of these ions with matter. High-resolution measurements on the fragments resulting from these interactions have already yielded a wealth of new information on such diverse topics as plasma oscillations in solids and stereochemical structures of molecular ions as well as a variety of atomic collision phenomena. The general features of several such experiments will be discussed and recent results will be presented.

  7. A molecular beam epitaxy facility for in situ neutron scattering

    SciTech Connect

    Dura, J. A.; LaRock, J.

    2009-07-15

    A molecular beam epitaxy (MBE) facility has been built to enable in situ neutron scattering measurements during growth of epitaxial layers. While retaining the full capabilities of a research MBE chamber, this facility has been optimized for polarized neutron reflectometry measurements. Optimization includes a compact lightweight portable design, a neutron window, controllable magnetic field, deposition across a large 76 mm diameter sample with exceptional flux uniformity, and sample temperatures continuously controllable from 38 to 1375 K. A load lock chamber allows for sample insertion, storage of up to 4 samples, and docking with other facilities. The design and performance of this chamber are described here.

  8. Molecular-beam gas-sampling system

    NASA Technical Reports Server (NTRS)

    Young, W. S.; Knuth, E. L.

    1972-01-01

    A molecular beam mass spectrometer system for rocket motor combustion chamber sampling is described. The history of the sampling system is reviewed. The problems associated with rocket motor combustion chamber sampling are reported. Several design equations are presented. The results of the experiments include the effects of cooling water flow rates, the optimum separation gap between the end plate and sampling nozzle, and preliminary data on compositions in a rocket motor combustion chamber.

  9. Superconducting nanowires by electron-beam-induced deposition

    SciTech Connect

    Sengupta, Shamashis; Li, Chuan; Guéron, S.; Bouchiat, H.; Baumier, Cedric; Fortuna, F.; Kasumov, Alik

    2015-01-26

    Superconducting nanowires can be fabricated by decomposition of an organometallic gas using a focused beam of Ga ions. However, physical damage and unintentional doping often result from the exposure to the ion beam, motivating the search for a means to achieve similar structures with a beam of electrons instead of ions. This has so far remained an experimental challenge. We report the fabrication of superconducting tungsten nanowires by electron-beam-induced-deposition, with critical temperature of 2.0 K and critical magnetic field of 3.7 T, and compare them with superconducting wires made with ions. This work is an important development for the template-free realization of nanoscale superconducting devices, without the requirement of an ion beam column.

  10. Local deposition of high-purity Pt nanostructures by combining electron beam induced deposition and atomic layer deposition

    SciTech Connect

    Mackus, A. J. M.; Sanden, M. C. M. van de; Kessels, W. M. M.; Mulders, J. J. L.

    2010-06-15

    An approach for direct-write fabrication of high-purity platinum nanostructures has been developed by combining nanoscale lateral patterning by electron beam induced deposition (EBID) with area-selective deposition of high quality material by atomic layer deposition (ALD). Because virtually pure, polycrystalline Pt nanostructures are obtained, the method extends the application possibilities of EBID, whereas compared to other area-selective ALD approaches, a much higher resolution is attainable; potentially down to sub-10 nm lateral dimensions.

  11. A molecular view of vapor deposited glasses

    SciTech Connect

    Singh, Sadanand; Pablo, Juan J. de

    2011-05-21

    Recently, novel organic glassy materials that exhibit remarkable stability have been prepared by vapor deposition. The thermophysical properties of these new ''stable'' glasses are equivalent to those that common glasses would exhibit after aging over periods lasting thousands of years. The origin of such enhanced stability has been elusive; in the absence of detailed models, past studies have discussed the formation of new polyamorphs or that of nanocrystals to explain the observed behavior. In this work, an atomistic molecular model of trehalose, a disaccharide of glucose, is used to examine the properties of vapor-deposited stable glasses. Consistent with experiment, the model predicts the formation of stable glasses having a higher density, a lower enthalpy, and higher onset temperatures than those of the corresponding ''ordinary'' glass formed by quenching the bulk liquid. Simulations reveal that newly formed layers of the growing vapor-deposited film exhibit greater mobility than the remainder of the material, thereby enabling a reorganization of the film as it is grown. They also reveal that ''stable'' glasses exhibit a distinct layered structure in the direction normal to the substrate that is responsible for their unusual properties.

  12. Electron Beam Freeform Fabrication: A Rapid Metal Deposition Process

    NASA Technical Reports Server (NTRS)

    Taminger, Karen M. B.; Hafley, Robert A.

    2003-01-01

    Manufacturing of structural metal parts directly from computer aided design (CAD) data has been investigated by numerous researchers over the past decade. Researchers at NASA Langley REsearch Center are developing a new solid freeform fabrication process, electron beam freeform fabrication (EBF), as a rapid metal deposition process that works efficiently with a variety of weldable alloys. The EBF process introduces metal wire feedstock into a molten pool that is created and sustained using a focused electron beam in a vacuum environment. Thus far, this technique has been demonstrated on aluminum and titanium alloys of interest for aerospace structural applications nickel and ferrous based alloys are also planned. Deposits resulting from 2219 aluminum demonstrations have exhibited a range of grain morphologies depending upon the deposition parameters. These materials ave exhibited excellent tensile properties comparable to typical handbook data for wrought plate product after post-processing heat treatments. The EBF process is capable of bulk metal deposition at deposition rated in excess of 2500 cubic centimeters per hour (150 cubic inches per our) or finer detail at lower deposition rates, depending upon the desired application. This process offers the potential for rapidly adding structural details to simpler cast or forged structures rather than the conventional approach of machining large volumes of chips to produce a monolithic metallic structure. Selective addition of metal onto simpler blanks of material can have a significant effect on lead time reduction and lower material and machining costs.

  13. Applying CLIPS to control of molecular beam epitaxy processing

    NASA Technical Reports Server (NTRS)

    Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

    1990-01-01

    A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

  14. Perspective: Oxide molecular-beam epitaxy rocks!

    SciTech Connect

    Schlom, Darrell G.

    2015-06-01

    Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  15. Materials issues in molecular beam epitaxy

    SciTech Connect

    Tsao, J.Y.

    1993-12-31

    The technology of crystal growth has advanced enormously during the past two decades; among those advances, the development and refinement of molecular beam epitaxy (MBE) has been among the most important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today form the basis for many of the most advanced device structures in solid-state physics, electronics and optoelectronics. In addition to its numerous device applications, MBE is also an enormously rich and interesting area of materials science in and of itself. This paper, discusses a few examples of some of these materials issues, organized according to whether they involve bulk, thin films, or surfaces.

  16. Site control technique for quantum dots using electron beam induced deposition

    SciTech Connect

    Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi

    2014-05-15

    To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement.

  17. Serendipitous Meanderings and Adventures with Molecular Beams

    NASA Astrophysics Data System (ADS)

    Toennies, J. Peter

    2004-01-01

    This is the story of a native-born American who came as a postdoc to the country of his parents, Germany. There, by good fortune, he could participate in the revival and the rebuilding of the physical sciences following the ravishments of the Second World War, becoming at the age of 38, the director of a Max-Planck-Institut in Gottingen. Working under nearly ideal conditions, he carried out basic research using molecular beams. Aided by many active, youthfully impulsive, yet perceptive and imaginative, students and experienced knowledgeable guest scientists from many countries, he enjoyed exciting adventures into unknown landscapes in the fields of molecular gas-phase interactions and solid-surface phenomena and, most recently, in the realms of quantum liquids and solids.

  18. Electrostatic particle trap for ion beam sputter deposition

    DOEpatents

    Vernon, Stephen P.; Burkhart, Scott C.

    2002-01-01

    A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate. The electrostatic charged particle trap enables prevention of charged particles from being deposited on the substrate thereby enabling the deposition of extremely low defect density films, such as required for reflective masks of an extreme ultraviolet lithography (EUVL) system.

  19. Hydrogen removal from e-beam deposited alumina thin films by oxygen ion beam

    SciTech Connect

    Das, Arijeet Mukharjee, C. Rajiv, K. Bose, Aniruddha Singh, S. D. Rai, S. K.; Ganguli, Tapas; Joshi, S. C.; Deb, S. K.; Phase, D. M.

    2014-04-24

    Hydrogen interstitials and oxygen vacancies defects create energy levels in the band gap of alumina. This limits the application of alumina as a high-k dielectric. A low thermal budget method for removal of hydrogen from alumina is discussed. It is shown that bombardment of alumina films with low energy oxygen ion beam during electron beam evaporation deposition decreases the hydrogen concentration in the film significantly.

  20. An investigation of nonuniform dose deposition from an electron beam

    NASA Astrophysics Data System (ADS)

    Lilley, William; Luu, Kieu X.

    1994-08-01

    In a search for an explanation of nonuniform electron-beam dose deposition, the integrated tiger series (ITS) of coupled electron/photon Monte Carlo transport codes was used to calculate energy deposition in the package materials of an application-specific integrated circuit (ASIC) while the thicknesses of some of the materials were varied. The thicknesses of three materials that were in the path of an electron-beam pulse were varied independently so that analysis could determine how the radiation dose measurements using thermoluminescent dosimeters (TLD's) would be affected. The three materials were chosen because they could vary during insertion of the die into the package or during the process of taking dose measurements. The materials were aluminum, HIPEC (a plastic), and silver epoxy. The calculations showed that with very small variations in thickness, the silver epoxy had a large effect on the dose uniformity over the area of the die.

  1. Molecular-Beam Chopper and Four-Channel Amplifier

    NASA Technical Reports Server (NTRS)

    Adams, B. R.

    1986-01-01

    Molecular-beam chopper phase controller and timing interface is subsystem of four-stage, differentially pumped, modulated molecular-beam/mass spectrometer. Subsystem maintains accurate phase control and timing for repetitive signal averaging over several hours of operation. Chopper phase controller/ timing interface and four-channel programable time-multiplexed amplifier provide substantial improvements in attainable signal-to-noise ratio, detection limit, and accuracy of molecular-beam/mass-spectrometer system.

  2. Rapid tooling by electron-beam vapor deposition

    SciTech Connect

    Meier, T. C., LLNL

    1998-02-25

    Electron-beam physical vapor deposition (EBPVD) of tooling metal, onto a shaped substrate to produce a replica of the substrate surface, offers the potential for significant cost savings over present methods of injection mold manufacturing. These savings are realized by the high deposition rate and the corresponding short manufacturing times provided by the EBPVD process. However, on route to realizing these gains, there are process technical issues which need to be resolved. Mold surfaces typically contain relatively high aspect ratio details that must be replicated to dimensional tolerances within +/- 2 mils. The deposited mold material must also provide high surface hardness and high fracture toughness. Good quality grain structure can be obtained in deposited Al 10-wt% Cu mold material when the substrate and corresponding deposit are at high process temperature. However, the resulting mold is subject to distortion during cooldown due to differential temperatures and shrinkage rates. Thermally controlled cooldown and the use of crushable substrate materials reduce these distortions, but not to the required levels of tolerance. Deposition of the Al-Cu at lower temperature produces columnar, poorly joined grains which result in a brittle and weakened mold material. When Al 10-wt% Cu metal vapor is deposited across high aspect ratio step features on the substrate surface, a grain growth defect can form in the step-shadowed regions of the deposited material, alongside the step feature. The step coverage defect consists of entrained voids which persist at intermediate deposition temperatures and produce a weakened mold. This final 1997 LDRD report investigates causes of this step coverage defect and offers methods for their control and elimination.

  3. Deposition of biaxially textured yttria-stabilized zirconia by ion-beam-assisted deposition.

    SciTech Connect

    Chudzik, M. P.

    1998-09-17

    Biaxially textured yttria (8 mol %)-stabilized zirconia (YSZ) thin films were deposited on randomly oriented Hastelloy C and Stainless Steel 304 at room temperature as a buffer layer for subsequent deposition of oriented YBa{sub 2}Cu{sub 3}O{sub x} films. The 0.16-1.3 {micro}m thick YSZ films were deposited by e-beam evaporation at rates of 1.2-3.2 {angstrom}/sec. Biaxially textured films were produced with an Ar/O{sub 2} ion beam directed at the substrate during film growth. X-ray diffraction was used to study in-plane and out-of-plane orientation as a function of ion-bombardment angle, film thickness, ion-to-atom flux ratio, and substrate material. In-plane and out-of-plane average-misorientation angles on these YSZ films that were deposited by ion-beam-assisted deposition were as low as 17 and 5.4{degree}, respectively, on as-received substrates.

  4. An Optimized Nanoparticle Separator Enabled by Electron Beam Induced Deposition

    SciTech Connect

    Fowlkes, Jason Davidson; Doktycz, Mitchel John; Rack, P. D.

    2010-01-01

    Size based separations technologies will inevitably benefit from advances in nanotechnology. Direct write nanofabrication provides a useful mechanism to deposit/etch nanoscale elements in environments otherwise inaccessible to conventional nanofabrication techniques. Here, electron beam induced deposition (EBID) was used to deposit an array of nanoscale features in a 3D environment with minimal material proximity effects outside the beam interaction region (BIR). Specifically, the membrane component of a nanoparticle separator was fabricated by depositing a linear array of sharply tipped nanopillars, with a singular pitch, designed for sub 50nm nanoparticle permeability. The nanopillar membrane was used in a dual capacity to control the flow of nanoparticles in the transaxial direction of the array while facilitating the sealing of the cellular sized compartment in the paraxial direction. An optimized growth recipe resulted which (1) maximized the growth efficiency of the membrane (which minimizes proximity effects), (2) preserved the fidelity of spacing between nanopillars (which maximizes the size based gating quality of the membrane) while (3) maintaining sharp nanopillar apexes for impaling an optically transparent polymeric lid critical for device sealing.

  5. Molecular dynamics and quasidynamics simulations of the annealing of bulk and near-surface interstitials formed in molecular-beam epitaxial Si due to low-energy particle bombardment during deposition

    NASA Technical Reports Server (NTRS)

    Kitabatake, M.; Fons, P.; Greene, J. E.

    1991-01-01

    The relaxation, diffusion, and annihilation of split and hexagonal interstitials resulting from 10 eV Si irradiation of (2x1)-terminated Si(100) are investigated. Molecular dynamics and quasidynamics simulations, utilizing the Tersoff many-body potential are used in the investigation. The interstitials are created in layers two through six, and stable atomic configurations and total potential energies are derived as a function of site symmetry and layer depth. The interstitial Si atoms are allowed to diffuse, and the total potential energy changes are calculated. Lattice configurations along each path, as well as the starting configurations, are relaxed, and minimum energy diffusion paths are derived. The results show that the minimum energy paths are toward the surface and generally involved tetrahedral sites. The calculated interstitial migration activation energies are always less than 1.4 eV and are much lower in the near-surface region than in the bulk.

  6. Infrared Rugates by Molecular Beam Epitaxy

    NASA Technical Reports Server (NTRS)

    Rona, M.

    1993-01-01

    Rugates are optical structures that have a sinusoidal index of refraction (harmonic gradient-index field). As their discrete high/ low index filter counterparts, they can be used as narrow rejection band filters. However, since rugates do not have abrupt interfaces, they tend to have a smaller absorption, hence deliver a higher in band reflectivity. The absence of sharp interfaces makes rugates even more desirable for high-energy narrow band reflectors. In this application, the lack of a sharp interface at the maximum internal standing wave electric field results in higher breakdown strengths. Our method involves fabricating rugates, with molecular beam epitaxy, on GaAs wafers as an Al(x)Ga(1-x)As single-crystal film.

  7. A critical literature review of focused electron beam induced deposition

    SciTech Connect

    Dorp, W. F. van; Hagen, C. W.

    2008-10-15

    An extensive review is given of the results from literature on electron beam induced deposition. Electron beam induced deposition is a complex process, where many and often mutually dependent factors are involved. The process has been studied by many over many years in many different experimental setups, so it is not surprising that there is a great variety of experimental results. To come to a better understanding of the process, it is important to see to which extent the experimental results are consistent with each other and with the existing model. All results from literature were categorized by sorting the data according to the specific parameter that was varied (current density, acceleration voltage, scan patterns, etc.). Each of these parameters can have an effect on the final deposit properties, such as the physical dimensions, the composition, the morphology, or the conductivity. For each parameter-property combination, the available data are discussed and (as far as possible) interpreted. By combining models for electron scattering in a solid, two different growth regimes, and electron beam induced heating, the majority of the experimental results were explained qualitatively. This indicates that the physical processes are well understood, although quantitatively speaking the models can still be improved. The review makes clear that several major issues remain. One issue encountered when interpreting results from literature is the lack of data. Often, important parameters (such as the local precursor pressure) are not reported, which can complicate interpretation of the results. Another issue is the fact that the cross section for electron induced dissociation is unknown. In a number of cases, a correlation between the vertical growth rate and the secondary electron yield was found, which suggests that the secondary electrons dominate the dissociation rather than the primary electrons. Conclusive evidence for this hypothesis has not been found. Finally

  8. Molecular contamination study by interaction of a molecular beam with a platinum surface

    NASA Technical Reports Server (NTRS)

    Nuss, H. E.

    1976-01-01

    The capability of molecular beam scattering from a solid surface is analyzed for identification of molecular contamination of the surface. The design and setup of the molecular beam source and the measuring setup for the application of a phase sensitive measuring technique for the determination of the scattered beam intensity are described. The scattering distributions of helium and nitrogen molecular beams interacting with a platinum surface were measured for different amounts of contamination from diffusion pump oil for surface temperatures ranging from 30 to 400 C. The results indicate the scattering of molecular beams from a platinum surface is a very sensitive method for detecting surface contamination.

  9. Molecular beam studies of stratospheric photochemistry

    NASA Astrophysics Data System (ADS)

    Moore, Teresa Anne

    1998-12-01

    Photochemistry of chlorine oxide containing species plays a major role in stratospheric ozone depletion. This thesis discusses two photodissociation studies of the key molecules ClONO2 and ClOOCl which were previously thought to only produce Cl-atom (ozone depleting) products at wavelengths relevant to the stratosphere. The development of a molecular beam source of ClOOCl and the photodissociation dynamics of the model system Cl2O are also discussed. In the first chapter, the photochemistry of ClONO2 is examined at 308 nm using the technique of photofragment translational spectroscopy. Two primary decomposition pathways, leading to Cl + NO3 and ClO + NO2, were observed, with a lower limit of 0.33 for the relative yield of ClO. The angular distributions for both channels were anisotropic, indicating that the dissociation occurs within a rotational period. Chapter two revisits the photodissociation dynamics of Cl2O at 248 and 308 nm, on which we had previously reported preliminary findings. At 248 nm, three distinct dissociation pathways leading to Cl + ClO products were resolved. At 308 nm, the angular distribution was slightly more isotropic that previously reported, leaving open the possibility that Cl2O excited at 308 nm lives longer than a rotational period. Chapter three describes the development and optimization of a molecular beam source of ClOOCl. We utilized pulsed laser photolysis of ClA2O to generate ClO radicals, and cooled the cell to promote three body recombination to form ClOOCl. The principal components in the beam were Cl2, Cl2O, and ClOOCl. In the fourth chapter, the photodissociation dynamics of ClOOCl are investigated at 248 and 308 nm. We observed multiple dissociation pathways which produced ClO + ClO and 2Cl + O2 products. The relative Cl:ClO product yields are 1.0:0.13 and 1.0:0.20 for ClOOCl photolysis at 248 and 308 nm, respectively. The upper limit for the relative yield of the ClO + ClO channel was 0.19 at 248 nm and 0.31 at 308 nm

  10. On the Growth of Complex Oxides by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Fong, Dillon

    Functional materials based on complex oxides in thin film form offer new and exciting strategies for meeting many of our outstanding energy challenges through systematic control of layer sequencing, strain, etc. However, the synthesis of such oxide films can be a major challenge even when utilizing reactive molecular-beam epitaxy (MBE), a powerful deposition technique that allows the construction of materials atomic plane by atomic plane. To understand the fundamental physics of oxide growth by reactive MBE, we present in situ surface x-ray diffraction results on the growth of SrTiO3 and SrO-SrTiO3 thin films on (001)-oriented SrTiO3 substrates. For homoepitaxy, we compare sequential deposition (alternating Sr and Ti monolayer doses) with that of co-deposition of Sr and Ti, both in a background of oxygen pressure, and observe drastically different growth pathways due to the presence of a TiO2 double layer. For heteroepitaxial growth of Ruddlesden-Popper SrO-SrTiO3 films, we find that layers rearrange dynamically, resulting in layer sequences distinct from the shutter sequence. In general, the starting surface structure and composition, in combination with local thermodynamic considerations, strongly influence our ability to atomically construct new complex oxides.

  11. GaN quantum dots by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Daudin, B.; Adelmann, C.; Gogneau, N.; Sarigiannidou, E.; Monroy, E.; Fossard, F.; Rouvière, J. L.

    2004-03-01

    The conditions to grow GaN quantum dots (QDs) by plasma-assisted molecular beam epitaxy will be examined. It will be shown that, depending on the Ga/N ratio value, the growth mode of GaN deposited on AlN can be either of the Stranski-Krastanow (SK) or of the Frank-Van der Merwe type. Accordingly, quantum wells or QDs can be grown, depending on the desired application. In the particular case of modified SK growth mode, it will be shown that both plastic and elastic strain relaxation can coexist. Growth of GaN QDs with N-polarity will also be discussed and compared to their counterpart with Ga polarity.

  12. ALLIGATOR - An apparatus for ion beam assisted deposition with a broad-beam ion source

    NASA Astrophysics Data System (ADS)

    Wituschek, H.; Barth, M.; Ensinger, W.; Frech, G.; Rück, D. M.; Leible, K. D.; Wolf, G. K.

    1992-04-01

    Ion beam assisted deposition is a versatile technique for preparing thin films and coatings for various applications. Up to now a prototype setup for research purposes has been used in our laboratory. Processing of industrial standard workpieces requires a high current ion source with broad beam and high uniformity for homogeneous bombardment. In this contribution a new apparatus for large area samples will be described. It is named ALLIGATOR (German acronym of facility for ion assisted evaporation on transverse movable or rotary targets). In order to have a wide energy range available two ion sources are used. One delivers a beam energy up to 1.3 keV. The other is suitable for energies from 5 keV up to 40 keV. The ``high-energy'' ion source is a multicusp multiaperture source with 180-mA total current and a beam diameter of 280 mm at the target position.

  13. Anomalous scaling behavior and surface roughening in molecular thin-film deposition

    SciTech Connect

    Yim, S.; Jones, T. S.

    2006-04-15

    The thin film growth dynamics of a molecular semiconductor, free-base phthalocyanine (H{sub 2}Pc), deposited by organic molecular beam deposition, has been studied by atomic force microscopy (AFM) and height difference correlation function (HDCF) analysis. The measured dynamic scaling components ({alpha}{sub loc}=0.61{+-}0.12, {beta}=1.02{+-}0.08, and 1/z=0.72{+-}0.13) are consistent with rapid surface roughening and anomalous scaling behavior. A detailed analysis of AFM images and simple growth models suggest that this behavior arises from the pronounced upward growth of crystalline H{sub 2}Pc mounds during the initial stages of thin film growth.

  14. Focused-ion-beam-induced deposition of superconducting nanowires

    NASA Astrophysics Data System (ADS)

    Sadki, E. S.; Ooi, S.; Hirata, K.

    2004-12-01

    Superconducting nanowires, with a critical temperature of 5.2K, have been synthesized using an ion-beam-induced deposition, with a gallium focused ion beam and tungsten carboxyl, W(CO)6, as precursor. The films are amorphous, with atomic concentrations of about 40%, 40%, and 20% for W, C, and Ga, respectively, 0K values of the upper critical field and coherence length of 9.5T and 5.9nm, respectively, are deduced from the resistivity data at different applied magnetic fields. The critical current density is Jc=1.5×105A /cm2 at 3K. This technique can be used as a template-free fabrication method for superconducting devices.

  15. Note: High density pulsed molecular beam for cold ion chemistry.

    PubMed

    Kokish, M G; Rajagopal, V; Marler, J P; Odom, B C

    2014-08-01

    A recent expansion of cold and ultracold molecule applications has led to renewed focus on molecular species preparation under ultrahigh vacuum conditions. Meanwhile, molecular beams have been used to study gas phase chemical reactions for decades. In this paper, we describe an apparatus that uses pulsed molecular beam technology to achieve high local gas densities, leading to faster reaction rates with cold trapped ions. We characterize the beam's spatial profile using the trapped ions themselves. This apparatus could be used for preparation of molecular species by reactions requiring excitation of trapped ion precursors to states with short lifetimes or for obtaining a high reaction rate with minimal increase of background chamber pressure.

  16. Note: High density pulsed molecular beam for cold ion chemistry

    SciTech Connect

    Kokish, M. G.; Rajagopal, V.; Marler, J. P.; Odom, B. C.

    2014-08-15

    A recent expansion of cold and ultracold molecule applications has led to renewed focus on molecular species preparation under ultrahigh vacuum conditions. Meanwhile, molecular beams have been used to study gas phase chemical reactions for decades. In this paper, we describe an apparatus that uses pulsed molecular beam technology to achieve high local gas densities, leading to faster reaction rates with cold trapped ions. We characterize the beam's spatial profile using the trapped ions themselves. This apparatus could be used for preparation of molecular species by reactions requiring excitation of trapped ion precursors to states with short lifetimes or for obtaining a high reaction rate with minimal increase of background chamber pressure.

  17. Dielectric performance of diamond-like carbon nanofilms deposited by electron-beam-induced deposition

    NASA Astrophysics Data System (ADS)

    Balaur, Eugeniu; Peele, Andrew G.

    2008-12-01

    The effect of electron beam dose and low accelerating voltage on diamond-like-carbon (DLC) deposition rate and the resulting current-voltage characteristics in thin metal/DLC/semiconductor junctions was studied. We show that thicker DLC films can be obtained using lower accelerating voltages (2 kV) than when using higher accelerating voltage (20 kV). However, under the conditions used the insulating performance of the thicker films is worse than the thinner films. We attribute this effect to the variation of tunnelling barrier height in DLC deposited using different accelerating voltages. DLC films with a tunnelling barrier height of up to 3.12 eV were obtained using a 20 kV electron-beam, while only 0.73 eV was achieved for 2 kV DLC films.

  18. Molecular beam surface analysis. 1993 Summary report

    SciTech Connect

    Appelhans, A.D.; Ingram, J.C.; Groenewold, G.S.; Dahl, D.A.; Delmore, J.E.

    1993-09-01

    The Molecular Beam Surface Analysis (MBSA) program is developing both laboratory-based and potentially field-portable chemical analyses systems taking advantage of new surface analysis technology developed at the Idaho National Engineering Laboratory (INEL). The objective is to develop the means to rapidly detect and identify, with high specificity and high sensitivity, nonvolatile and low volatile organics found in Chemical Weapons (CW) and High Explosives (HE) feedstocks, agents, and decomposition products on surfaces of plants, rocks, paint chips, filters, smears of buildings, vehicles, equipment, etc.. Ideally, the method would involve no sample preparation and no waste generation, and would have the potential for being implemented as a field-portable instrument. In contrast to existing analytical methods that rely on sample volatility, MBSA is optimized for nonvolatile and low volatile compounds. This makes it amenable for rapidly screening field samples for CW agent decomposition products and feedstock chemicals and perhaps actual agents. In its final configuration (benchtop size) it could be operated in a non-laboratory environment (such as an office building) requiring no sample preparation chemistry or chemical supplies. It could also be included in a mobile laboratory used in on-site, ore remote site cooperative surveys, or in a standard laboratory, where it would provide fast screening of samples at minimal cost.

  19. Molecular beam studies of elementary chemical processes.

    PubMed

    Lee, Y T

    1987-05-15

    The experimental investigation of elementary chemical reactions is presently in a very exciting period. The advance in modern microscopic experimental methods, especially crossed molecular beams and laser technology, has made it possible to explore the dynamics and mechanisms of important elementary chemical reactions in great detail. Through the continued accumulation of detailed and reliable knowledge about elementary reactions, we will be in a better position to understand, predict, and control many time-dependent macroscopic chemical processes that are important in nature or to human society. In addition, because of recent improvements in the accuracy of theoretical predictions based on large-scale ab initio quantum mechanical calculations, meaningful comparisons between theoretical and experimental findings have become possible. In the remaining years of the 20th century, there is no doubt that the experimental investigation of the dynamics and mechanisms of elementary chemical reactions will play a very important role in bridging the gap between the basic laws of mechanics and the real world of chemistry.

  20. Molecular beam studies of reaction dynamics

    SciTech Connect

    Lee, Y.T.

    1993-12-01

    The major thrust of this research project is to elucidate detailed dynamics of simple elementary reactions that are theoretically important and to unravel the mechanism of complex chemical reactions or photochemical processes that play important roles in many macroscopic processes. Molecular beams of reactants are used to study individual reactive encounters between molecules or to monitor photodissociation events in a collision-free environment. Most of the information is derived from measurement of the product fragment energy, angular, and state distributions. Recent activities are centered on the mechanisms of elementary chemical reactions involving oxygen atoms with unsaturated hydrocarbons, the dynamics of endothermic substitution reactions, the dependence of the chemical reactivity of electronically excited atoms on the alignment of excited orbitals, the primary photochemical processes of polyatomic molecules, intramolecular energy transfer of chemically activated and locally excited molecules, the energetics of free radicals that are important to combustion processes, the infrared-absorption spectra of carbonium ions and hydrated hydronium ions, and bond-selective photodissociation through electric excitation.

  1. Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim; Engel-Herbert, Roman

    2016-07-01

    The synthesis of a 50 unit cell thick n = 4 Srn+1TinO3n+1 (Sr5Ti4O13) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO2 layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO2 layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO3 perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.

  2. Orientational anisotropy in simulated vapor-deposited molecular glasses

    SciTech Connect

    Lyubimov, Ivan; Antony, Lucas; Walters, Diane M.; Ediger, M. D.; Rodney, David; Pablo, Juan J. de

    2015-09-07

    Enhanced kinetic stability of vapor-deposited glasses has been established for a variety of glass organic formers. Several recent reports indicate that vapor-deposited glasses can be orientationally anisotropic. In this work, we present results of extensive molecular simulations that mimic a number of features of the experimental vapor deposition process. The simulations are performed on a generic coarse-grained model and an all-atom representation of N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD), a small organic molecule whose vapor-deposited glasses exhibit considerable orientational anisotropy. The coarse-grained model adopted here is found to reproduce several key aspects reported in experiments. In particular, the molecular orientation of vapor-deposited glasses is observed to depend on substrate temperature during deposition. For a fixed deposition rate, the molecular orientation in the glasses changes from isotropic, at the glass transition temperature, T{sub g}, to slightly normal to the substrate at temperatures just below T{sub g}. Well below T{sub g}, molecular orientation becomes predominantly parallel to the substrate. The all-atom model is used to confirm some of the equilibrium structural features of TPD interfaces that arise above the glass transition temperature. We discuss a mechanism based on distinct orientations observed at equilibrium near the surface of the film, which get trapped within the film during the non-equilibrium process of vapor deposition.

  3. Molecular Beam Mass Spectrometry (MBMS) (Revised) (Fact Sheet)

    SciTech Connect

    Not Available

    2011-07-01

    This fact sheet provides information about Molecular Beam Mass Spectrometry (MBMS) capabilities and applications at NREL's National Bioenergy Center. NREL has six MBMS systems that researchers and industry partners can use to understand thermochemical biomass conversion and biomass composition recalcitrance.

  4. Fundamental Proximity Effects in Focused electron Beam Induced Deposition

    SciTech Connect

    Plank, Harald; Smith, Daryl; Haber, Thomas; Rack, Philip D; Hofer, Ferdinand

    2012-01-01

    Fundamental proximity effects for electron beam induced deposition processes on nonflat surfaces were studied experimentally and via simulation. Two specific effects were elucidated and exploited to considerably increase the volumetric growth rate of this nanoscale direct write method: (1) increasing the scanning electron pitch to the scale of the lateral electron straggle increased the volumetric growth rate by 250% by enhancing the effective forward scattered, backscattered, and secondary electron coefficients as well as by strong recollection effects of adjacent features; and (2) strategic patterning sequences are introduced to reduce precursor depletion effects which increase volumetric growth rates by more than 90%, demonstrating the strong influence of patterning parameters on the final performance of this powerful direct write technique.

  5. Energy deposition studies for the LBNE beam absorber

    SciTech Connect

    Rakhno, Igor L.; Mokhov, Nikolai V.; Tropin, Igor S.

    2015-01-29

    Results of detailed Monte Carlo energy deposition studies performed for the LBNE absorber core and the surrounding shielding with the MARS15 code are described. The model of the entire facility, that includes a pion-production target, focusing horns, target chase, decay channel, hadron absorber system – all with corresponding radiation shielding – was developed using the recently implemented ROOT-based geometry option in the MARS15 code. This option provides substantial flexibility and automation when developing complex geometry models. Both normal operation and accidental conditions were studied. Various design options were considered, in particular the following: (i) filling the decay pipe with air or helium; (ii) the absorber mask material and shape; (iii) the beam spoiler material and size. Results of detailed thermal calculations with the ANSYS code helped to select the most viable absorber design options.

  6. Molecular beam studies of oxygen atom reactions with unsaturated hydrocarbons

    SciTech Connect

    Schmoltner, A.-M.

    1989-10-01

    The dynamics of several elementary reactions relevant to combustion was investigated. The reactive scattering of ground state oxygen atoms with small unsaturated hydrocarbons was studied using a crossed molecular beam apparatus with a rotatable mass spectrometer detector. The infrared and ultraviolet photodissociation of anisole was studied using a rotating beam source/fixed detector apparatus. 253 refs., 64 figs., 4 tabs.

  7. Dual ion beam deposition of carbon films with diamondlike properties

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1984-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamondlike films generated by sputtering a graphite target.

  8. Synthesis of silicon nitride films by ion beam enhanced deposition

    NASA Astrophysics Data System (ADS)

    Xianghuai, Liu; Bin, Xue; Zhihong, Zheng; Zuyao, Zhou; Shichang, Zou

    1989-03-01

    Silicon nitride films with stoichiometric ratio of Si 3N 4 have been synthesized by concurrent electron beam evaporation of silicon and bombardment with nitrogen ions. The results show that the component ratio of nitrogen to silicon in IBED silicon nitride films can be controlled and predicted by the atomic arrival rate ratio of nitrogen to silicon. IR measurement shows that the characteristic absorption peak of IBED Si 3N 4 is located at a wavenumber of 840 cm -1. The refractive index ranges from 2.2 to 2.6. RBS, AES, TEM, SEM, ED and spreading resistance measurement were used for investigation of the depth profiles of composition and structure of silicon nitride films synthesized by IBED. An intermixed layer is formed at the interface by the knock on effect, and a silicon enriched layer is observed at the surface region of the film. Normally the films were found to be amorphous, but electron diffraction patterns taken from deposited layer showed a certain crystallinity. The silicon nitride films prepared by IBED have dramatically less oxygen content than that formed by non-ion-assisted deposition.

  9. Formation of Cobalt Silicide Films by Ion Beam Deposition

    SciTech Connect

    Zhang, Yanwen; McCready, David E.; Wang, Chong M.; Young, James S.; Mckinley, Mathew I.; Whitlow, Harry J.; Razpet, Alenka; Possnert, Göran; Zhang, Tonghe; Wu, Yuguang

    2006-01-01

    Thin films of cobalt silicide are widely used as metallization in very large-scale integrated electronic circuits. In this study, Co ions were deposited on Si (111) wafers by a high beam current filter metal vacuum arc deposition (FMEVAD) system. Surface silicide films were formed after annealing from 500 to 700 C for 30 minutes. Cobalt depth profiles and contaminations were determined using Rutherford backscattering spectrometry (RBS) and time-of-flight energy elastic recoil detection analysis (ToF-E ERDA). The polycrystalline cobalt silicide phases formed were characterized by grazing-incidence x-ray diffraction (GIXRD). The surface topography development and interfaces have been investigated by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The results show that a thin CoSi2 surface layer with both a smooth surface topography and sharp interface can be achieved by annealing at 700 C. The CoSi phase and O contamination were observed in the samples that were annealed at lower temperatures.

  10. Surface Properties of SiC Layer Grown by Molecular Beam Epitaxy (MBE) with Helicon Sputtering Molecular Beam Source

    NASA Astrophysics Data System (ADS)

    Kakuta, Akira; Moronuki, Nobuyuki; Furukawa, Yuji

    Although there have been some attempts to produce a monocrystalline silicon carbide (SiC) flat surface, the surface properties, such as surface roughness, have not satisfied the required specifications. In this study, we apply a helicon sputtering device to molecular beam epitaxy (MBE) to improve those properties. The helicon sputtering device was used as a molecular beam source for generating a Si molecular beam, where the electric field caused by the helicon coil supplied energy to the sputtered Si molecules. The amount of energy was controlled by the electric power applied to the coil. High-purity acetylene gas was used as the carbon (C) molecular beam source. The substrate was a monocrystalline (111) Si wafer. With the increase of the electric power, that is, the supply of high energy to molecules, the roughness of the surface was improved. A uniform mirror surface of monocrystalline SiC was produced over the entire substrate with a roughness of 1nm (Ra) order.

  11. Nanostructured component fabrication by electron beam-physical vapor deposition

    NASA Astrophysics Data System (ADS)

    Singh, Jogender; Wolfe, Douglas E.

    2005-08-01

    Fabrication of cost-effective, nano-grained net-shaped components has brought considerable interest to Department of Defense, National Aeronautics and Space Administration, and Department of Energy. The objective of this paper is to demonstrate the versatility of electron beam-physical vapor deposition (EB-PVD) technology in engineering new nanostructured materials with controlled microstructure and microchemistry in the form of coatings and net-shaped components for many applications including the space, turbine, optical, biomedical, and auto industries. Coatings are often applied on components to extent their performance and life under severe environmental conditions including thermal, corrosion, wear, and oxidation. Performance and properties of the coatings depend upon their composition, microstructure, and deposition condition. Simultaneous co-evaporation of multiple ingots of different compositions in the high energy EB-PVD chamber has brought considerable interest in the architecture of functional graded coatings, nano-laminated coatings, and design of new structural materials that could not be produced economically by conventional methods. In addition, high evaporation and condensate rates allowed fabricating precision net-shaped components with nanograined microstructure for various applications. Using EB-PVD, nano-grained rhenium (Re) coatings and net-shaped components with tailored microstructure and properties were fabricated in the form of tubes, plates, and Re-coated spherical graphite cores. This paper will also present the results of various metallic and ceramic coatings including chromium, titanium carbide (TiC), titanium diboride (TiB2), hafnium nitride (HfN), titanium-boron-carbonitride (TiBCN), and partially yttria stabilized zirconia (YSZ) TBC coatings deposited by EB-PVD for various applications.

  12. Photo-metalorganic molecular-beam epitaxy: A new epitaxial growth technique

    SciTech Connect

    Tokumitsu, E.; Yamada, T.; Konagai, M.; Takahashi, K.

    1989-05-01

    Metalorganic molecular-beam epitaxy (MOMBE) combines many important advantages of molecular-beam epitaxy and metalorganic chemical vapor deposition. One of the most important features of MOMBE is that photochemical reaction can be used and we can call this new technique ''photo-MOMBE.'' Triisobutylaluminum (TIBA) has been used in photo-MOMBE instead of triethylaluminum (TEA) as a new aluminum source in order to enhance the photodecomposition. The optical absorption coefficient of TIBA for 193 nm was found to be three times greater than that of TEA. Selective deposition of Al, AlAs, and GaAlAs was carried out by using an ArF excimer laser. The Al mole fraction of GaAlAs ternary alloy grown with the excimer laser irradiation was greater than that of the film grown without the laser irradiation.

  13. Nanoscale electron beam-induced deposition and purification of ruthenium for extreme ultraviolet lithography mask repair

    NASA Astrophysics Data System (ADS)

    Noh, J. H.; Stanford, M. G.; Lewis, B. B.; Fowlkes, J. D.; Plank, H.; Rack, P. D.

    2014-12-01

    One critical area for the adoption of extreme ultraviolet (EUV) lithography is the development of appropriate mask repair strategies. To this end, we have explored focused electron beam-induced deposition of the ruthenium capping or protective layer. Electron beam-induced deposition (EBID) was used to deposit a ruthenium capping/protective film using the liquid bis(ethylcyclopentyldienyl)ruthenium(II) precursor. The carbon to ruthenium atomic ratio in the as-deposited material was estimated to be ~9/1. Subsequent to deposition, we demonstrate an electron stimulated purification process to remove carbon by-products from the deposit. Results indicate that high-fidelity nanoscale ruthenium repairs can be realized.

  14. Ion-beam-deposited boron carbide coatings for the extreme ultraviolet.

    PubMed

    Blumenstock, G M; Keski-Kuha, R A

    1994-09-01

    The normal-incidence reflectance of ion-beam-deposited boron carbide thin films has been evaluated in the extreme ultraviolet (EUV) spectral region. High-reflectance coatings have been produced with reflectances greater than 30% between 67 and 121.6 nm. This high reflectance makes ion-beam-deposited boron carbide an attractive coating for EUV applications.

  15. Focused electron beam induced deposition of magnetic nanostructures

    NASA Astrophysics Data System (ADS)

    de Teresa, Jose M.

    2011-03-01

    Nanopatterning strategies of magnetic materials normally rely on standard techniques such as electron-beam lithography using electron-sensitive resists. Focused electron beam induced deposition (FEBID) is currently being investigated as an alternative single-step route to produce functional magnetic nanostructures. Thus, Co-based and Fe-based precursors have been recently investigated for the growth of magnetic nanostructures by FEBID. In the present contribution, I will give an overview of the existing literature on magnetic nanostructures by FEBID and I will focus on the growth of Co nanostructures by FEBID using Co 2 (CO)8 as precursor gas. The Co content in the nanostructures can reach 95%. Magnetotransport experiments indicate that full metallic behaviour is displayed with relatively low residual resistivity and standard anisotropic magnetoresistance (0.8%). The coercive field of nanowires with changing aspect ratio has been determined in nanowires with width down to 150 nm by means of Magneto-optical Kerr Effect and the magnetization reversal has been imaged by means of Magnetic Force Microscopy, Scanning Transmission X-ray Microscopy as well as Lorentz Microscopy experiments. Nano-Hall probes have been grown with remarkable minimum detectable magnetic flux. Noticeably, it has been found that the domain-wall propagation field is lower than the domain-wall nucleation field in L-shaped nanowires, with potential applications in magnetic logic, sensing and storage. The spin polarization of these Co nanodeposits has been determined through Andreev-Reflection experiments in ferromagnetic-superconducting nanocontacts and amounts to 35%. Recent results obtained in Fe-based nanostructures by FEBID using Fe 2 (CO)9 precursor will be also presented. I acknowledge the collaboration in this field with A. Fernandez-Pacheco, R. Cordoba, L. Serrano, S. Sangiao, L.A. Rodriguez, C. Magen, E. Snoeck, L. Morellon, M.R. Ibarra.

  16. A free jet (supersonic), molecular beam source with automatized, 50 nm precision nozzle-skimmer positioning.

    PubMed

    Eder, S D; Samelin, B; Bracco, G; Ansperger, K; Holst, B

    2013-09-01

    Low energy (thermal) free jet (supersonic) molecular beams are used in a range of applications from surface science and surface deposition to quantum coherence and gas kinetics experiments. A free jet molecular beam is created by a gas expansion from a high pressure reservoir through a small aperture (nozzle). The nozzle typically has a diameter of 2-20 μm. The central part of the beam is selected using a skimmer, typically up to 500 μm in diameter. Recent years have seen the introduction of highly spatially confined beam sources based on micrometer skimmers and micrometer or even sub-micrometer nozzles. Such sources have been applied, for example, in the investigation of superfluidity and in neutral helium microscopy. However, up till now no source design allowing the precise positioning of the micro-skimmer relative to the nozzle has been available. This is an important issue because the relative position of skimmer and nozzle can influence the beam properties considerably. Here we present the design and implementation of a new molecular beam source, which allows an automatized, 50 nm precision positioning of the skimmer relative to the nozzle. The source is liquid nitrogen cooled and the temperature can be controlled between 110 K and 350 K with a temperature fluctuation of less than ±0.1 K over several hours. Beam intensity measurements using a 5 μm nozzle and a skimmer 5 μm in diameter are presented for stagnation pressures po in the range 3-180 bars. A 2D beam profile scan, using a 9.5 μm skimmer and a 5 μm nozzle is presented as a further documentation of the versatility of the new design and as an illustration of the influence of the relative skimmer-nozzle position on the beam properties.

  17. Supersonic molecular beam experiments on surface chemical reactions.

    PubMed

    Okada, Michio

    2014-10-01

    The interaction of a molecule and a surface is important in various fields, and in particular in complex systems like biomaterials and their related chemistry. However, the detailed understanding of the elementary steps in the surface chemistry, for example, stereodynamics, is still insufficient even for simple model systems. In this Personal Account, I review our recent studies of chemical reactions on single-crystalline Cu and Si surfaces induced by hyperthermal oxygen molecular beams and by oriented molecular beams, respectively. Studies of oxide formation on Cu induced by hyperthermal molecular beams demonstrate a significant role of the translational energy of the incident molecules. The use of hyperthermal molecular beams enables us to open up new chemical reaction paths specific for the hyperthermal energy region, and to develop new methods for the fabrication of thin films. On the other hand, oriented molecular beams also demonstrate the possibility of understanding surface chemical reactions in detail by varying the orientation of the incident molecules. The steric effects found on Si surfaces hint at new ways of material fabrication on Si surfaces. Controlling the initial conditions of incoming molecules is a powerful tool for finely monitoring the elementary step of the surface chemical reactions and creating new materials on surfaces.

  18. Atomic and molecular layer deposition for surface modification

    SciTech Connect

    Vähä-Nissi, Mika; Sievänen, Jenni; Salo, Erkki; Heikkilä, Pirjo; Kenttä, Eija; Johansson, Leena-Sisko; Koskinen, Jorma T.; Harlin, Ali

    2014-06-01

    Atomic and molecular layer deposition (ALD and MLD, respectively) techniques are based on repeated cycles of gas–solid surface reactions. A partial monolayer of atoms or molecules is deposited to the surface during a single deposition cycle, enabling tailored film composition in principle down to molecular resolution on ideal surfaces. Typically ALD/MLD has been used for applications where uniform and pinhole free thin film is a necessity even on 3D surfaces. However, thin – even non-uniform – atomic and molecular deposited layers can also be used to tailor the surface characteristics of different non-ideal substrates. For example, print quality of inkjet printing on polymer films and penetration of water into porous nonwovens can be adjusted with low-temperature deposited metal oxide. In addition, adhesion of extrusion coated biopolymer to inorganic oxides can be improved with a hybrid layer based on lactic acid. - Graphical abstract: Print quality of a polylactide film surface modified with atomic layer deposition prior to inkjet printing (360 dpi) with an aqueous ink. Number of printed dots illustrated as a function of 0, 5, 15 and 25 deposition cycles of trimethylaluminum and water. - Highlights: • ALD/MLD can be used to adjust surface characteristics of films and fiber materials. • Hydrophobicity after few deposition cycles of Al{sub 2}O{sub 3} due to e.g. complex formation. • Same effect on cellulosic fabrics observed with low temperature deposited TiO{sub 2}. • Different film growth and oxidation potential with different precursors. • Hybrid layer on inorganic layer can be used to improve adhesion of polymer melt.

  19. Measuring Incorporation Of Arsenic In Molecular-Beam Expitaxy

    NASA Technical Reports Server (NTRS)

    Lewis, Blair F.; Fernandez, Rouel F.; Madhukar, Anupam; Grunthaner, Frank J.

    1988-01-01

    Changes in surface layers cause oscillations in RHEED measurements. Specular RHEED Beam intensity measured before, during, and after deposition of seven to eight monomolecular layers of gallium during 1.5 seconds. Arsenic pressure was 1.7x10 to the negative seventh power torr (2.3x10 to the negative fifth power Pa) throughout measurements.

  20. Phase of molecular ink in nanoscale direct deposition processes

    NASA Astrophysics Data System (ADS)

    Cho, Narae; Ryu, Seol; Kim, Byeongju; Schatz, George C.; Hong, Seunghun

    2006-01-01

    We report the first observation of a phase transition in a nanoscale direct deposition process. This transition involves the melting of molecular ink layers in dip-pen nanolithography, and it is observed by measuring the temperature dependence of the growth rate of the deposited pattern. The results are interpreted using a diffusion equation approach in conjunction with a "double-molecular-layer" model of the adsorbed molecules on the atomic force microscope tip. The theory provides a qualitative explanation for the dependence of the pattern growth rate on solvent and adsorbed water as well as on temperature.

  1. Electromigration in focused ion beam deposited tungsten single nanowires

    NASA Astrophysics Data System (ADS)

    Mandal, Pabitra; Das, Bipul; Raychaudhuri, A. K.

    As the focused ion beam induced deposited (FIBID) nanowires (NWs) of W, Pt are being used in nanoelectronic technology to connect individual nanodevices, repairing damaged interconnects in integrated circuit (IC), electromigration study in FIBID-NWs has become essential. Briefly, when a thin conductor, like metallic Al, Cu interconnects in an IC chip carry quite high current density ~1012 A/m2, ions or atoms start migrating. Such migration causes void and hillock formation leading to interconnect discontinuity, short circuit and ultimately IC failure. Our electromigration study in single FIBID-NWs of W reveals that failure in NWs of width and thickness ~100 nm occurs typically at 1011 A/m2. Most notably, void and hillock always form in opposite polarity compared to typical metallic NWs. Such distinctly new outcome is explained via electromigration driven by direct force (ionic charge*electric field) opposed to wind force driven migration observed in metallic NWs. As FIBID-NWs are composite in nature, different species (e.g., Ga, W and C) migrate with different degree and direction depending on their oxidation state, leading to redistribution of species across NW length and formation of a Ga rich hillock. S. N. Bose National Centre for Basic Sciences, Block-JD, Sector-III, Salt Lake, Kolkata-98, India.

  2. Reactive Collisions in Crossed Molecular Beams

    DOE R&D Accomplishments Database

    Herschbach, D. R.

    1962-02-01

    The distribution of velocity vectors of reaction products is discussed with emphasis on the restrictions imposed by the conservation laws. The recoil velocity that carries the products away from the center of mass shows how the energy of reaction is divided between internal excitation and translation. Similarly, the angular distributions, as viewed from the center of mass, reflect the partitioning of the total angular momentum between angular momenta of individual molecules and orbital angular momentum associated with their relative motion. Crossed-beam studies of several reactions of the type M + RI yields R + MI are described, where M = K, Rb, Cs, and R = CH{sub 3}, C{sub 3}H{sub 5}, etc. The results show that most of the energy of reaction goes into internal excitation of the products and that the angular distribution is quite anisotropic, with most of the MI recoiling backward (and R forward) with respect to the incoming K beam. (auth)

  3. Molecular beam magnetic deflection behavior of sodium trimers

    SciTech Connect

    George, A.R.

    1983-01-01

    The observation and characterization of the Stern-Gerlach magnetic deflection behavior of sodium trimers in a supersonic molecular beam is reported. As part of a program to apply molecular beam technique to the study of metal clusters, a molecular beam apparatus designed for magnetic deflection and resonance experiments on selected alkali metal cluster species has been developed and is described. Clusters are produced in a supersonic expansion of a pure metal vapor, and are detected mass selectively by photoionization, quadrupole mass analysis, and an ion counting detector. The deflection profiles reveal peaks corresponding to the one Bohr magneton of magnetic moment of the unpaired electron, but in addition show evidence of a distribution of effective magnetic moments extending the full range between the positive and negative one Bohr magneton peaks. In addition, experiments utilizing multiple magnets and trajectory selecting collimators show evidence for magnetic moment and molecular state changes during traversal through the apparatus. Information from time of flight velocity analysis is used in conjunction with the deflection data and with computer simulations to rule out experimental artifacts and to establish that the observed phenomena can be the result of magnetic moment changes and molecular state changes caused by adiabatic and non-adiabatic traversals of avoided level crossings in the Zeeman energy diagram of these molecules. The phenomena have implications for the application of molecular beam Electron Spin Resonance technique to polyatomic molecules.

  4. Molecular-beam Studies of Primary Photochemical Processes

    DOE R&D Accomplishments Database

    Lee, Y. T.

    1982-12-01

    Application of the method of molecular-beam photofragmentation translational spectroscopy to the investigation of primary photochemical processes of polyatomic molecules is described. Examples will be given to illustrate how information concerning the energetics, dynamics, and mechanism of dissociation processes can be obtained from the precise measurements of angular and velocity distributions of products in an experiment in which a well-defined beam of molecules is crossed with a laser.

  5. Production of high density molecular beams with wide velocity scanning.

    PubMed

    Sheffield, L S; Woo, S O; Rathnayaka, K D D; Lyuksyutov, I F; Herschbach, D R

    2016-06-01

    We describe modifications of a pulsed rotating supersonic beam source that improve performance, particularly increasing the beam density and sharpening the pulse profiles. As well as providing the familiar virtues of a supersonic molecular beam (high intensity, narrowed velocity distribution, and drastic cooling of rotation and vibration), the rotating source enables scanning the translational velocity over a wide range. Thereby, beams of any atom or molecule available as a gas can be slowed or speeded. Using Xe beams in the slowing mode, we have obtained lab speeds down to about 40 ± 5 m/s with density near 10(11) cm(-3) and in the speeding mode lab speeds up to about 660 m/s and density near 10(14) cm(-3). We discuss some congenial applications. Providing low lab speeds can markedly enhance experiments using electric or magnetic fields to deflect, steer, or further slow polar or paramagnetic molecules. The capability to scan molecular speeds facilitates merging velocities with a codirectional partner beam, enabling study of collisions at very low relative kinetic energies, without requiring either beam to be slow. PMID:27370474

  6. Production of high density molecular beams with wide velocity scanning

    NASA Astrophysics Data System (ADS)

    Sheffield, L. S.; Woo, S. O.; Rathnayaka, K. D. D.; Lyuksyutov, I. F.; Herschbach, D. R.

    2016-06-01

    We describe modifications of a pulsed rotating supersonic beam source that improve performance, particularly increasing the beam density and sharpening the pulse profiles. As well as providing the familiar virtues of a supersonic molecular beam (high intensity, narrowed velocity distribution, and drastic cooling of rotation and vibration), the rotating source enables scanning the translational velocity over a wide range. Thereby, beams of any atom or molecule available as a gas can be slowed or speeded. Using Xe beams in the slowing mode, we have obtained lab speeds down to about 40 ± 5 m/s with density near 1011 cm-3 and in the speeding mode lab speeds up to about 660 m/s and density near 1014 cm-3. We discuss some congenial applications. Providing low lab speeds can markedly enhance experiments using electric or magnetic fields to deflect, steer, or further slow polar or paramagnetic molecules. The capability to scan molecular speeds facilitates merging velocities with a codirectional partner beam, enabling study of collisions at very low relative kinetic energies, without requiring either beam to be slow.

  7. A low Earth orbit molecular beam space simulation facility

    NASA Technical Reports Server (NTRS)

    Cross, J. B.

    1984-01-01

    A brief synopsis of the low Earth orbit (LEO) satellite environment is presented including neutral and ionic species. Two ground based atomic and molecular beam instruments are described which are capable of simulating the interaction of spacecraft surfaces with the LEO environment and detecting the results of these interactions. The first detects mass spectrometrically low level fluxes of reactively and nonreactively surface scattered species as a function of scattering angle and velocity while the second ultrahigh velocity (UHV) molecular beam, laser induced fluorescence apparatus is capable of measuring chemiluminescence produced by either gas phase or gas-surface interactions. A number of proposed experiments are described.

  8. Molecular modeling of vapor-deposited polymer glasses.

    PubMed

    Lin, Po-Han; Lyubimov, Ivan; Yu, Lian; Ediger, M D; de Pablo, Juan J

    2014-05-28

    We have investigated the properties of vapor-deposited glasses prepared from short polymer chains using molecular dynamics simulations. Vapor-deposited polymer glasses are found to have higher density and higher kinetic stability than ordinary glasses prepared by gradual cooling of the corresponding equilibrium liquid. In contrast to results for binary Lennard-Jones glasses, the deposition rate is found to play an important role in the stability of polymer vapor-deposited glasses. Glasses deposited at the slowest deposition rate and at the optimal substrate temperature are found to correspond to the ordinary glasses that one could hypothetically prepare by cooling the liquid at rates that are 4-5 orders of magnitude slower than those accessible in the current simulations. For intermediate-length polymer chains, the resulting vapor-deposited glasses are found to be highly anisotropic. For short chains, however, the glasses are isotropic, showing that structural anisotropy is not a necessary condition for formation of stable glasses by physical vapor deposition.

  9. Molecular Mechanisms of Bone 18F-NaF Deposition

    PubMed Central

    Czernin, Johannes; Satyamurthy, Nagichettiar; Schiepers, Christiaan

    2011-01-01

    There is renewed interest in 18F-NaF bone imaging with PET or PET/CT. The current brief discussion focuses on the molecular mechanisms of 18F-NaF deposition in bone and presents model-based approaches to quantifying bone perfusion and metabolism in the context of preclinical and clinical applications of bone imaging with PET. PMID:21078790

  10. Pulsed rotating supersonic source for merged molecular beams

    NASA Astrophysics Data System (ADS)

    Sheffield, L.; Hickey, M. S.; Krasovitskiy, V.; Rathnayaka, K. D. D.; Lyuksyutov, I. F.; Herschbach, D. R.

    2012-06-01

    We describe a pulsed rotating supersonic beam source, evolved from an ancestral device [M. Gupta and D. Herschbach, J. Phys. Chem. A 105, 1626 (2001)]. The beam emerges from a nozzle near the tip of a hollow rotor which can be spun at high-speed to shift the molecular velocity distribution downward or upward over a wide range. Here we consider mostly the slowing mode. Introducing a pulsed gas inlet system, cryocooling, and a shutter gate eliminated the main handicap of the original device in which continuous gas flow imposed high background pressure. The new version provides intense pulses, of duration 0.1-0.6 ms (depending on rotor speed) and containing ˜1012 molecules at lab speeds as low as 35 m/s and ˜1015 molecules at 400 m/s. Beams of any molecule available as a gas can be slowed (or speeded); e.g., we have produced slow and fast beams of rare gases, O2, Cl2, NO2, NH3, and SF6. For collision experiments, the ability to scan the beam speed by merely adjusting the rotor is especially advantageous when using two merged beams. By closely matching the beam speeds, very low relative collision energies can be attained without making either beam very slow.

  11. Pulsed rotating supersonic source for merged molecular beams

    NASA Astrophysics Data System (ADS)

    Sheffield, Les; Hickey, Mark; Krasovitskiy, Vitaliy; Rathnayaka, Daya; Lyuksyutov, Igor; Herschbach, Dudley

    2012-10-01

    We continue the characterization of a pulsed rotating supersonic beam source. The original device was described by M. Gupta and D. Herschbach, J. Phys. Chem. A 105, 1626 (2001). The beam emerges from a nozzle near the tip of a hollow rotor which can be spun at high-speed to shift the molecular velocity distribution downward or upward over a wide range. Here we consider mostly the slowing mode. Introducing a pulsed gas inlet system, and a shutter gate eliminate the main handicap of the original device in which continuous gas flow imposed high background pressure. The new version provides intense pulses, of duration 0.1--0.6 ms (depending on rotor speed) and containing ˜10^12 molecules at lab speeds as low as 35 m/s and ˜10^15 molecules at 400 m/s. Beams of any molecule available as a gas can be slowed (or speeded); e.g., we have produced slow and fast beams of rare gases, O2, NO2, NH3, and SF6. For collision experiments, the ability to scan the beam speed by merely adjusting the rotor is especially advantageous when using two merged beams. By closely matching the beam speeds, very low relative collision energies can be attained without making either beam very slow.

  12. Metallic impurities in gallium nitride grown by molecular beam epitaxy

    SciTech Connect

    McHugo, S.A.; Krueger, J.; Kisielowski, C.

    1997-04-01

    Transition metals are often encountered in trace amounts in semiconductors. They have been extensively studied in most elemental and compound systems, since they form deep donor and/or acceptor levels which usually degrade the electronic and optical material properties. Only very little is known about transition metals in recent III-V semiconducting materials, such as GaN, AlN and InN. These few studies have been done exclusively on Metal-Organic Chemical Vapor Deposition (MOCVD) or Hybrid Vapor Phase Epitaxy HVPE-grown GaN. Preliminary x-ray fluorescence studies at the Advanced Light Source, beamline 10.3.1, Lawrence Berkeley National Laboratory have revealed that GaN materials grown by Molecular Beam Epitaxy (MBE) have Fe, Ni and Cr as the dominant transition metal contaminants. This finding is commensurate with the extremely high concentrations of hydrogen, carbon and oxygen (up to 10{sup 20} cm{sup {minus}3}) measured by Secondary Ion Mass Spectroscopy (SIMS). Preliminary work using the mapping capabilities of the x-ray fluorescence microprobe revealed the metal impurities were inhomogeneously distributed over the film. Future work of this collaboration will be to find a correlation between the existence of transition metals in MBE films, as revealed by x-ray fluorescence, and Photoluminescence (PL) spectra taken in the infrared region. Also, the authors will make use of the 1 {mu}m spatial resolution of x-ray microprobe to locate the contaminants in relation to structural defects in the GaN films. Because of the large strain caused by the lattice mismatch between the GaN films and the substrates, the films grow in a columnar order with high densities of grain boundaries and dislocations. These structural defects offer preferential sites for metal precipitation or agglomeration which could degrade the optical properties of this material more so than if the impurities were left dissolved in the GaN.

  13. (abstract) Optical Scattering and Surface Microroughness of Ion Beam Deposited Au and Pt Thin Films

    NASA Technical Reports Server (NTRS)

    Al-Jumaily, Ghanim A.; Raouf, Nasrat A.; Edlou, Samad M.; Simons, John C.

    1994-01-01

    Thin films of gold and platinum have been deposited onto superpolished fused silica substrates using thermal evaporation, ion assisted deposition (IAD), and ion assisted sputtering. The influence of ion beam flux, thin film material, and deposition rate on the films microroughness have been investigated. Short range surface microroughness of the films has been examined using scanning tunneling microscopy (STM) and atomic force microscopy (AFM). Long range surface microroughness has been characterized using an angle resolved optical scatterometer. Results indicate that ion beam deposited coatings have improved microstructure over thermally evaporated films.

  14. Laser damage resistance of hafnia thin films deposited by electron beam deposition, reactive low voltage ion plating, and dual ion beam sputtering

    SciTech Connect

    Gallais, Laurent; Capoulade, Jeremie; Natoli, Jean-Yves; Commandre, Mireille; Cathelinaud, Michel; Koc, Cian; Lequime, Michel

    2008-05-01

    A comparative study is made of the laser damage resistance of hafnia coatings deposited on fused silica substrates with different technologies: electron beam deposition (from Hf or HfO2 starting material), reactive low voltage ion plating, and dual ion beam sputtering.The laser damage thresholds of these coatings are determined at 1064 and 355 nm using a nanosecond pulsed YAG laser and a one-on-one test procedure. The results are associated with a complete characterization of the samples: refractive index n measured by spectrophotometry, extinction coefficient k measured by photothermal deflection, and roughness measured by atomic force microscopy.

  15. Molecular beam simulation of planetary atmospheric entry - Some recent results.

    NASA Technical Reports Server (NTRS)

    French, J. B.; Reid, N. M.; Nier, A. O.; Hayden, J. L.

    1972-01-01

    Progress is reported in the development of molecular beam techniques to simulate entry into planetary atmospheres. Molecular beam sources for producing fast beams containing CO2 and atomic oxygen are discussed. Results pertinent to the design and calibration of a mass spectrometer ion source for measurement of the Martian atmosphere during the free molecule portion of the entry trajectory are also presented. The shortcomings and advantages of this simulation technique are discussed, and it is demonstrated that even with certain inadequacies much information useful to the ion source design was obtained. Particularly, it is shown that an open-cavity configuration retains sensitivity to atomic oxygen, provides reasonable signal enhancement from the stagnation effect, is not highly sensitive to pitch and yaw effects, and presents no unforeseen problems in measuring CO2 or atomic oxygen.

  16. Full characterization of an intense pulsed hyperthermal molecular beam

    NASA Astrophysics Data System (ADS)

    Watanabe, D.; Che, D.-C.; Fukuyama, T.; Hashinokuchi, M.; Teraoka, Y.; Kasai, T.

    2005-05-01

    A molecular beam technique for generating an intense pulsed hyperthermal molecular beam (pulsed HTMB) was developed. The beam source consists of a pulse valve, a cooling-water bottle that protects the pulse valve from heat transfer of the high temperature nozzle, and a nozzle with a heater. The point was a pulse-valve operation with the high temperature nozzle which was 30-mm long and was made of pyrolytic boron nitride. The pulsed HTMB of HCl was practically generated. The total beam intensity of the pulsed HTMB was measured by a quadrupole mass spectrometer. It was determined that the beam intensity of the pulsed HTMB was two orders of magnitude larger than that obtained in continuous-HTMB conditions. The pulsed HTMB of HCl was fully characterized by means of (2+1) resonance-enhanced multiphoton ionization and ion time-of-flight techniques. We found that the velocity distribution of the pulsed HTMB was well expressed as supersonic molecular beams. At the highest nozzle temperature of 1400 K, the mean translational energy value of HCl molecules was 1.38 eV. The translational energy distribution of the pulsed HTMB covered a range from 0.8 to 1.6 eV. The fraction of higher translational energy molecules greater than 1.0 eV was 80% in the 1400 K nozzle. The rotational state distributions of HCl molecules in the pulsed HTMB were expressed as the Boltzmann distribution. While the rotational temperature decreased by an adiabatic expansion of the beam, the vibrational temperature, which was determined by the ratio of the ground-state population to the excited state one, almost equaled the nozzle temperature.

  17. Molecular structure of vapor-deposited amorphous selenium

    NASA Astrophysics Data System (ADS)

    Goldan, A. H.; Li, C.; Pennycook, S. J.; Schneider, J.; Blom, A.; Zhao, W.

    2016-10-01

    The structure of amorphous selenium is clouded with much uncertainty and contradictory results regarding the dominance of polymeric chains versus monomer rings. The analysis of the diffraction radial distribution functions are inconclusive because of the similarities between the crystalline allotropes of selenium in terms of the coordination number, bond length, bond angle, and dihedral angle. Here, we took a much different approach and probed the molecular symmetry of the thermodynamically unstable amorphous state via analysis of structural phase transformations. We verified the structure of the converted metastable and stable crystalline structures using scanning transmission electron microscopy. In addition, given that no experimental technique can tell us the exact three-dimensional atomic arrangements in glassy semiconductors, we performed molecular-dynamic simulations using a well-established empirical three-body interatomic potential. We developed a true vapor-deposited process for the deposition of selenium molecules onto a substrate using empirical molecular vapor compositions and densities. We prepared both vapor-deposited and melt-quenched samples and showed that the simulated radial distribution functions match very well to experiment. The combination of our experimental and molecular-dynamic analyses shows that the structures of vapor- and melt-quenched glassy/amorphous selenium are quite different, based primarily on rings and chains, respectively, reflecting the predominant structure of the parent phase in its thermodynamic equilibrium.

  18. Space processing applications of ion beam technology. [surface finishing, welding, milling and film deposition

    NASA Technical Reports Server (NTRS)

    Grodzka, P. G.

    1977-01-01

    Ion thruster engines for spacecraft propulsion can serve as ion beam sources for potential space processing applications. The advantages of space vacuum environments and the possible gravity effects on thruster ion beam materials operations such as thin film growth, ion milling, and surface texturing were investigated. The direct gravity effect on sputter deposition and vapor deposition processes are discussed as well as techniques for cold and warm welding.

  19. Inert gas enhanced laser-assisted purification of platinum electron-beam-induced deposits

    SciTech Connect

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; Fowlkes, Jason Davidson; Rack, Philip D.

    2015-06-30

    Electron-beam-induced deposition patterns, with composition of PtC5, were purified using a pulsed laser-induced purification reaction to erode the amorphous carbon matrix and form pure platinum deposits. Enhanced mobility of residual H2O molecules via a localized injection of inert Ar–H2 (4%) is attributed to be the reactive gas species for purification of the deposits. Surface purification of deposits was realized at laser exposure times as low as 0.1 s. The ex situ purification reaction in the deposit interior was shown to be rate-limited by reactive gas diffusion into the deposit, and deposit contraction associated with the purification process caused some loss of shape retention. To circumvent the intrinsic flaws of the ex situ anneal process, in situ deposition and purification techniques were explored that resemble a direct write atomic layer deposition (ALD) process. First, we explored a laser-assisted electron-beam-induced deposition (LAEBID) process augmented with reactive gas that resulted in a 75% carbon reduction compared to standard EBID. Lastly, a sequential deposition plus purification process was also developed and resulted in deposition of pure platinum deposits with high fidelity and shape retention.

  20. Inert gas enhanced laser-assisted purification of platinum electron-beam-induced deposits

    DOE PAGESBeta

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; Fowlkes, Jason Davidson; Rack, Philip D.

    2015-06-30

    Electron-beam-induced deposition patterns, with composition of PtC5, were purified using a pulsed laser-induced purification reaction to erode the amorphous carbon matrix and form pure platinum deposits. Enhanced mobility of residual H2O molecules via a localized injection of inert Ar–H2 (4%) is attributed to be the reactive gas species for purification of the deposits. Surface purification of deposits was realized at laser exposure times as low as 0.1 s. The ex situ purification reaction in the deposit interior was shown to be rate-limited by reactive gas diffusion into the deposit, and deposit contraction associated with the purification process caused some lossmore » of shape retention. To circumvent the intrinsic flaws of the ex situ anneal process, in situ deposition and purification techniques were explored that resemble a direct write atomic layer deposition (ALD) process. First, we explored a laser-assisted electron-beam-induced deposition (LAEBID) process augmented with reactive gas that resulted in a 75% carbon reduction compared to standard EBID. Lastly, a sequential deposition plus purification process was also developed and resulted in deposition of pure platinum deposits with high fidelity and shape retention.« less

  1. Inert Gas Enhanced Laser-Assisted Purification of Platinum Electron-Beam-Induced Deposits.

    PubMed

    Stanford, Michael G; Lewis, Brett B; Noh, Joo Hyon; Fowlkes, Jason D; Rack, Philip D

    2015-09-01

    Electron-beam-induced deposition patterns, with composition of PtC5, were purified using a pulsed laser-induced purification reaction to erode the amorphous carbon matrix and form pure platinum deposits. Enhanced mobility of residual H2O molecules via a localized injection of inert Ar-H2 (4%) is attributed to be the reactive gas species for purification of the deposits. Surface purification of deposits was realized at laser exposure times as low as 0.1 s. The ex situ purification reaction in the deposit interior was shown to be rate-limited by reactive gas diffusion into the deposit, and deposit contraction associated with the purification process caused some loss of shape retention. To circumvent the intrinsic flaws of the ex situ anneal process, in situ deposition and purification techniques were explored that resemble a direct write atomic layer deposition (ALD) process. First, we explored a laser-assisted electron-beam-induced deposition (LAEBID) process augmented with reactive gas that resulted in a 75% carbon reduction compared to standard EBID. A sequential deposition plus purification process was also developed and resulted in deposition of pure platinum deposits with high fidelity and shape retention.

  2. Friction and Wear of Ion-Beam-Deposited Diamondlike Carbon on Chemical-Vapor-Deposited, Fine-Grain Diamond

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Wu, Richard L. C.; Lanter, William C.

    1996-01-01

    Friction and wear behavior of ion-beam-deposited diamondlike carbon (DLC) films coated on chemical-vapor-deposited (CVD), fine-grain diamond coatings were examined in ultrahigh vacuum, dry nitrogen, and humid air environments. The DLC films were produced by the direct impact of an ion beam (composed of a 3:17 mixture of Ar and CH4) at ion energies of 1500 and 700 eV and an RF power of 99 W. Sliding friction experiments were conducted with hemispherical CVD diamond pins sliding on four different carbon-base coating systems: DLC films on CVD diamond; DLC films on silicon; as-deposited, fine-grain CVD diamond; and carbon-ion-implanted, fine-grain CVD diamond on silicon. Results indicate that in ultrahigh vacuum the ion-beam-deposited DLC films on fine-grain CVD diamond (similar to the ion-implanted CVD diamond) greatly decrease both the friction and wear of fine-grain CVD diamond films and provide solid lubrication. In dry nitrogen and in humid air, ion-beam-deposited DLC films on fine-grain CVD diamond films also had a low steady-state coefficient of friction and a low wear rate. These tribological performance benefits, coupled with a wider range of coating thicknesses, led to longer endurance life and improved wear resistance for the DLC deposited on fine-grain CVD diamond in comparison to the ion-implanted diamond films. Thus, DLC deposited on fine-grain CVD diamond films can be an effective wear-resistant, lubricating coating regardless of environment.

  3. Ion beam assisted deposition of MgO barriers for magnetic tunnel junctions

    SciTech Connect

    Cardoso, S.; Macedo, R. J.; Ferreira, R.; Augusto, A.; Wisniowski, P.; Freitas, P. P.

    2008-04-01

    This work reports for the first time results on MgO tunnel junctions prepared by ion beam. The MgO barrier was deposited from a ceramic MgO target using an assisted beam, following the deposition and assisted beam phase diagram which relate the beam profile with the current and energy. The deposition rate for MgO is calculated with and without assisted beam, and compared with the experimental values. The MgO film growth on Ta/CoFeB/MgO simple stacks was optimized aiming at a (002) preferred orientation for the MgO growth, measured by x-ray diffraction. The optimum assist beam energy was tuned for each deposition beam condition (+800,+1000,+1200 V), using assist beams of 40 mA ({approx}130 {mu}A/cm{sup 2}) with 0 to +600 V. Without assist beam, no texture is observed for the MgO, while the (002) orientation appears for assisted deposition. The optimum range of assist voltages is large, being limited by the onset of etching at high voltages, reducing the deposition rate. Magnetic tunnel junctions were deposited with the structure Ta 50 A/Ru 200 A/Ta 50 A/Mn{sub 78}Ir{sub 22} 150 A/Co{sub 90}Fe{sub 10} 30 A/Ru 8 A/Co{sub 56}Fe{sub 24}B{sub 20} 40 A/MgO t/Co{sub 56}Fe{sub 24}B{sub 20} 30 A/Ru 30 A/Ta 50 A, with the MgO barrier deposited with the conditions optimized by x rays. The effect of the assist beam energy on the junction properties (magnetoresistance and magnetization) are discussed. Tunnel magnetoresistance values up to 110%, with RA products of 100-400 {omega} {mu}m{sup 2}, for 11 A thick MgO barriers are obtained using assisted deposition with a +100 V assist beam, which is a major improvement of the {approx}30% of TMR, if no beam is used.

  4. Molecular dynamics simulation of gold cluster growth during sputter deposition

    NASA Astrophysics Data System (ADS)

    Abraham, J. W.; Strunskus, T.; Faupel, F.; Bonitz, M.

    2016-05-01

    We present a molecular dynamics simulation scheme that we apply to study the time evolution of the self-organized growth process of metal cluster assemblies formed by sputter-deposited gold atoms on a planar surface. The simulation model incorporates the characteristics of the plasma-assisted deposition process and allows for an investigation over a wide range of deposition parameters. It is used to obtain data for the cluster properties which can directly be compared with recently published experimental data for gold on polystyrene [M. Schwartzkopf et al., ACS Appl. Mater. Interfaces 7, 13547 (2015)]. While good agreement is found between the two, the simulations additionally provide valuable time-dependent real-space data of the surface morphology, some of whose details are hidden in the reciprocal-space scattering images that were used for the experimental analysis.

  5. Ion beam energy deposition physics for ICF targets

    SciTech Connect

    Mehlhorn, T.A.

    1980-01-01

    The target interaction physics of light ion beams will be described. The phenomenon of range shortening with increasing material temperature will be corroborated, and the concomittant phenomenon of range relengthening due to ion-electron decoupling will be introduced.

  6. Optimization of a plasma focus device as an electron beam source for thin film deposition

    NASA Astrophysics Data System (ADS)

    Zhang, T.; Lin, J.; Patran, A.; Wong, D.; Hassan, S. M.; Mahmood, S.; White, T.; Tan, T. L.; Springham, S. V.; Lee, S.; Lee, P.; Rawat, R. S.

    2007-05-01

    Electron beam emission characteristics from neon, argon, hydrogen and helium in an NX2 dense plasma focus (DPF) device were investigated in order to optimize the plasma focus device for deposition of thin films using energetic electron beams. A Rogowski coil and CCD based magnetic spectrometer were used to obtain temporal characteristics, total electron charge and energy distributions of electron emission from the NX2 DPF device. It is found that hydrogen should be the first choice for thin film deposition as it produces the highest electron beam charge and higher energy (from 50 to 200 keV) electrons. Neon is the next best choice as it gives the next highest electron beam charge with mid-energy (from 30 to 70 keV) electrons. The operation of NX2 with helium at voltages above 12 kV produces a mid-energy (from 30 to 70 keV) electron beam with low-electron beam charge, however, argon is not a good electron beam source for our NX2 DPF device. Preliminary results of the first ever thin film deposition using plasma focus assisted pulsed electron deposition using a hydrogen operated NX2 plasma focus device are presented.

  7. Silicon Oxide Deposition into a Hole Using a Focused Ion Beam

    NASA Astrophysics Data System (ADS)

    Nakamura, Hiroko; Komano, Haruki; Norimatu, Kenji; Gomei, Yoshio

    1991-11-01

    Focused ion beam (FIB)-induced deposition of silicon oxide in terms of filling a hole is reported. It was found that a vacant space was formed when an ion beam was simply scanned through the hole area. To investigate the mechanism to form the vacancy, deposition on the sample, which has a step with a height of 0.8 μm, was carried out by using a Si2+ and a Be2+ ion beam. An extruded deposit resembling a pent roof was observed from the step ridge. The mechanism of the pent roof growth on the steplike sample was considered and the vacancy formation in the hole can be explained by the same mechanism. For silicon oxide, the high growth rate of the extruded deposit is thought to be the key to the vacancy formation. A useful way is proposed to fill the hole with silicon oxide with almost no vacancy.

  8. Pulsed Molecular Beams For Growth Of InAs On GaAs

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J.

    1989-01-01

    Pauses for annealing reduce number of defects. Deposition process that includes pulsed molecular beams produces high-quality epitaxial layers of indium arsenide on gallium arsenide substrates. Layers made as much as 30 atoms thick without introducing excessive numbers of dislocations, despite 7.4-percent mismatch between InAs and GaAs crystal lattices. Layers offer superior electrical properties in such devices as optically addressed light modulators, infrared sensors, semiconductor lasers, and high-electron-mobility transistors. Technique applicable to other epitaxial systems in which lattices highly mismatched.

  9. Resistively Heated SiC Nozzle for Generating Molecular Beams

    NASA Technical Reports Server (NTRS)

    Cagiano, Steven; Abell, Robert; Patrick, Edward; Bendt, Miri; Gundersen, Cynthia

    2007-01-01

    An improved nozzle has been developed to replace nozzles used previously in an apparatus that generates a substantially unidirectional beam of molecules passing through a vacuum at speeds of several kilometers per second. The basic principle of operation of the apparatus is the same for both the previous and the present nozzle designs. The main working part of the nozzle is essentially a cylinder that is closed except that there is an inlet for a pressurized gas and, at one end, the cylinder is closed by a disk that contains a narrow central hole that serves as an outlet. The cylinder is heated to increase the thermal speeds of the gas molecules into the desired high-speed range. Heated, pressurized gas escapes through the outlet into a portion of the vacuum chamber that is separated, by a wall, from the rest of the vacuum chamber. In this portion of the vacuum chamber, the gas undergoes a free jet expansion. Most of the expanded gas is evacuated and thus does not become part of the molecular beam. A small fraction of the expanded beam passes through a narrow central orifice in the wall and thereby becomes a needle- thin molecular beam in the portion of the vacuum on the downstream side of the wall.

  10. Hybrid inorganic–organic superlattice structures with atomic layer deposition/molecular layer deposition

    SciTech Connect

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit

    2014-01-15

    A combination of the atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques is successfully employed to fabricate thin films incorporating superlattice structures that consist of single layers of organic molecules between thicker layers of ZnO. Diethyl zinc and water are used as precursors for the deposition of ZnO by ALD, while three different organic precursors are investigated for the MLD part: hydroquinone, 4-aminophenol and 4,4′-oxydianiline. The successful superlattice formation with all the organic precursors is verified through x-ray reflectivity studies. The effects of the interspersed organic layers/superlattice structure on the electrical and thermoelectric properties of ZnO are investigated through resistivity and Seebeck coefficient measurements at room temperature. The results suggest an increase in carrier concentration for small concentrations of organic layers, while higher concentrations seem to lead to rather large reductions in carrier concentration.

  11. Monte Carlo simulation of molecular flow in a neutral beam injector and comparison with experiment

    SciTech Connect

    Lillie, R.A.; Alsmiller, R.G. Jr.; Gabriel, T.A.; Santoro, R.T.; Schwenterly, S.W.

    1982-04-01

    Monte Carlo calculations have been performed to obtain estimates of the background gas pressure and molecular number density as a function of position in the PDX-prototype neutral beam injector, which has undergone testing at the Oak Ridge National Laboratory. Estimates of these quantities together with the transient and steady-state energy deposition and molecular capture rates on the cryopanels of the cryocondensation pumps and the molecular escape rate from the injector were obtained utilizing a detailed geometric model of the neutral beam injector. The molecular flow calculations were performed using an existing Monte Carlo radiation transport code, which was modified slightly to monitor the energy of the background gas molecules. The credibility of these calculations is demonstrated by the excellent agreement between the calculated and experimentally measured background gas pressure in front of the beamline calorimeter located in the downstream drift region of the injector. The usefulness of the calculational method as a design tool is illustrated by a comparison of the integrated beamline molecular density over the drift region of the injector for three modes of cryopump operation.

  12. Monte Carlo simulation of molecular flow in a neutral-beam injector and comparison with experiment

    SciTech Connect

    Lillie, R.A.; Gabriel, T.A.; Schwenterly, S.W.; Alsmiller, R.G. Jr.; Santoro, R.T.

    1981-09-01

    Monte Carlo calculations have been performed to obtain estimates of the background gas pressure and molecular number density as a function of position in the PDX-prototype neutral beam injector which has undergone testing at the Oak Ridge National Laboratory. Estimates of these quantities together with the transient and steady-state energy deposition and molecular capture rates on the cryopanels of the cryocondensation pumps and the molecular escape rate from the injector were obtained utilizing a detailed geometric model of the neutral beam injector. The molecular flow calculations were performed using an existing Monte Carlo radiation transport code which was modified slightly to monitor the energy of the background gas molecules. The credibility of these calculations is demonstrated by the excellent agreement between the calculated and experimentally measured background gas pressure in front of the beamline calorimeter located in the downstream drift region of the injector. The usefulness of the calculational method as a design tool is illustrated by a comparison of the integrated beamline molecular density over the drift region of the injector for three modes of cryopump operation.

  13. A nanoscale three-dimensional Monte Carlo simulation of electron-beam-induced deposition with gas dynamics.

    PubMed

    Smith, D A; Fowlkes, J D; Rack, P D

    2007-07-01

    A computer simulation was developed to simulate electron-beam-induced deposition (EBID). Simulated growth produced high-aspect-ratio, nanoscale pillar structures by simulating a stationary Gaussian electron beam. The simulator stores in memory the spatial and temporal coordinates of deposited atoms in addition to the type of electron, either primary (PE), back-scattered (BSE), or secondary (SE), that induced its deposition. The results provided in this paper apply to tungsten pillar growth by EBID on a tungsten substrate from WF(6) precursor, although the simulation may be applied to any substrate-precursor set. The details of the simulation are described including the Monte Carlo electron-solid interaction simulation used to generate scattered electron trajectories and SE generation, the probability of molecular dissociation of the precursor gas when an electron traverses the surface, and the gas dynamics which control the surface coverage of the WF(6) precursor on the substrate and pillar surface. In this paper, three specific studies are compared: the effects of beam energy, mass transport versus reaction-rate-limited growth, and the effects of surface diffusion on the EBID process.

  14. Influence of Molecular Shape on Molecular Orientation and Stability of Vapor-Deposited Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Walters, Diane M.; Johnson, Noah D.; Ediger, M. D.

    Physical vapor deposition is commonly used to prepare active layers in organic electronics. Recently, it has been shown that molecular orientation and packing can be tuned by changing the substrate temperature during deposition, while still producing macroscopically homogeneous films. These amorphous materials can be highly anisotropic when prepared with low substrate temperatures, and they can exhibit exceptional kinetic stability; films retain their favorable packing when heated to high temperatures. Here, we study the influence of molecular shape on molecular orientation and stability. We investigate disc-shaped molecules, such as TCTA and m-MTDATA, nearly spherical molecules, such as Alq3, and linear molecules covering a broad range of aspect ratios, such as p-TTP and BSB-Cz. Disc-shaped molecules have preferential horizontal orientation when deposited at low substrate temperatures, and their orientation can be tuned by changing the substrate temperature. Alq3 forms stable, amorphous films that are optically isotropic when vapor deposited over a broad range of substrate temperatures. This work may guide the choice of material and deposition conditions for vapor-deposited films used in organic electronics and allow for more efficient devices to be fabricated.

  15. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    PubMed Central

    Lewis, Brett B; Stanford, Michael G; Fowlkes, Jason D; Lester, Kevin; Plank, Harald

    2015-01-01

    Summary Platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IV)Me3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. In addition to purification, the post-deposition electron stimulated oxygen purification process enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention. PMID:25977862

  16. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    SciTech Connect

    Lewis, Brett B.; Stanford, Michael G.; Fowlkes, Jason D.; Lester, Kevin; Plank, Harald; Rack, Philip D.

    2015-04-08

    In this paper, platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IV)Me3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. Finally, in addition to purification, the post-deposition electron stimulated oxygen purification process enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention.

  17. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    DOE PAGESBeta

    Lewis, Brett B.; Stanford, Michael G.; Fowlkes, Jason D.; Lester, Kevin; Plank, Harald; Rack, Philip D.

    2015-04-08

    In this paper, platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IV)Me3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. Finally, in addition to purification, the post-deposition electron stimulated oxygen purification process enhancesmore » the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention.« less

  18. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition.

    PubMed

    Lewis, Brett B; Stanford, Michael G; Fowlkes, Jason D; Lester, Kevin; Plank, Harald; Rack, Philip D

    2015-01-01

    Platinum-carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IV)Me3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top-down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. In addition to purification, the post-deposition electron stimulated oxygen purification process enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention.

  19. Molecular layer deposition of alucone films using trimethylaluminum and hydroquinone

    SciTech Connect

    Choudhury, Devika; Sarkar, Shaibal K.; Mahuli, Neha

    2015-01-01

    A hybrid organic–inorganic polymer film grown by molecular layer deposition (MLD) is demonstrated here. Sequential exposures of trimethylaluminum [Al(CH{sub 3}){sub 3}] and hydroquinone [C{sub 6}H{sub 4}(OH){sub 2}] are used to deposit the polymeric films, which is a representative of a class of aluminum oxide polymers known as “alucones.” In-situ quartz crystal microbalance (QCM) studies are employed to determine the growth characteristics. An average growth rate of 4.1 Å per cycle at 150 °C is obtained by QCM and subsequently verified with x-ray reflectivity measurements. Surface chemistry during each MLD-half cycle is studied in depth by in-situ Fourier transform infrared (FTIR) vibration spectroscopy. Self limiting nature of the reaction is confirmed from both QCM and FTIR measurements. The conformal nature of the deposit, typical for atomic layer deposition and MLD, is verified with transmission electron microscopy imaging. Secondary ion mass spectroscopy measurements confirm the uniform elemental distribution along the depth of the films.

  20. Dual Ion Assist Beam Deposition of Magnesium Oxide for Coated Conductors

    NASA Astrophysics Data System (ADS)

    Groves, J. R.; Arendt3, P. N.; Holesinger, T. G.; Hammond, R. H.; Foltyn, S. R.; DePaula, R. F.; Stan, L.; Usov, I. O.

    2006-03-01

    Ion Beam Assisted Deposition (IBAD) of Magnesium Oxide (MgO) has been proven to be a viable route for producing template films used to deposit high quality YBCO coated conductors on flexible polycrystalline metal substrates. Here we will discuss improvements in this process using a dual ion assist beam configuration. Dual ion assist beam deposition of MgO reduces the requirements for substrate surface finishing while maintaining comparable film quality (phi scan full-width at half-maximum values between 7 and 8 degrees). Furthermore, this adaptation of the IBAD process eliminates the degradation of MgO texture observed in thick IBAD MgO films deposited on silicon nitride. We have deposited films up to 50 nanometers thick without degradation of in-plane texture. Increasing the MgO thickness increases the chemical stability of the template layer and can eliminate the necessity for subsequent buffer layers or the application of the homoepitaxial MgO layer needed to stabilize the thin, conventional IBAD MgO layer. Initial results of subsequently deposited YBCO on these dual assist ion beam MgO templates are quite promising.

  1. Molecular Orientation in Two Component Vapor-Deposited Glasses: Effect of Substrate Temperature and Molecular Shape

    NASA Astrophysics Data System (ADS)

    Powell, Charles; Jiang, Jing; Walters, Diane; Ediger, Mark

    Vapor-deposited glasses are widely investigated for use in organic electronics including the emitting layers of OLED devices. These materials, while macroscopically homogenous, have anisotropic packing and molecular orientation. By controlling this orientation, outcoupling efficiency can be increased by aligning the transition dipole moment of the light-emitting molecules parallel to the substrate. Light-emitting molecules are typically dispersed in a host matrix, as such, it is imperative to understand molecular orientation in two-component systems. In this study we examine two-component vapor-deposited films and the orientations of the constituent molecules using spectroscopic ellipsometry, UV-vis and IR spectroscopy. The role of temperature, composition and molecular shape as it effects molecular orientation is examined for mixtures of DSA-Ph in Alq3 and in TPD. Deposition temperature relative to the glass transition temperature of the two-component mixture is the primary controlling factor for molecular orientation. In mixtures of DSA-Ph in Alq3, the linear DSA-Ph has a horizontal orientation at low temperatures and slight vertical orientation maximized at 0.96Tg,mixture, analogous to one-component films.

  2. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    SciTech Connect

    Lee, J. H.; Tung, I. C.; Chang, S. -H.; Bhattacharya, A.; Fong, D. D.; Freeland, J. W.; Hong, Hawoong

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  3. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy.

    PubMed

    Lee, J H; Tung, I C; Chang, S-H; Bhattacharya, A; Fong, D D; Freeland, J W; Hong, Hawoong

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  4. Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition

    SciTech Connect

    Huang, Jie; Lucero, Antonio T.; Cheng, Lanxia; Kim, Jiyoung; Hwang, Hyeon Jun; Ha, Min-Woo

    2015-03-23

    In this study, we have deposited organic-inorganic hybrid semiconducting hydroquinone (HQ)/zinc oxide (ZnO) superlattices using molecular-atomic layer deposition, which enables accurate control of film thickness, excellent uniformity, and sharp interfaces at a low deposition temperature (150 °C). Self-limiting growth of organic layers is observed for the HQ precursor on ZnO surface. Nano-laminates were prepared by varying the number of HQ to ZnO cycles in order to investigate the physical and electrical effects of different HQ to ZnO ratios. It is indicated that the addition of HQ layer results in enhanced mobility and reduced carrier concentration. The highest Hall mobility of approximately 2.3 cm{sup 2}/V·s and the lowest n-type carrier concentration of approximately 1.0 × 10{sup 18}/cm{sup 3} were achieved with the organic-inorganic superlattice deposited with a ratio of 10 ZnO cycles to 1 HQ cycle. This study offers an approach to tune the electrical transport characteristics of ALD ZnO matrix thin films using an organic dopant. Moreover, with organic embedment, this nano-laminate material may be useful for flexible electronics.

  5. Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics

    SciTech Connect

    Chu, L. K.; Merckling, C.; Dekoster, J.; Caymax, M.; Alian, A.; Heyns, M.; Kwo, J.; Hong, M.

    2011-07-25

    We investigated the passivation of In{sub 0.53}Ga{sub 0.47}As (001) surface by molecular beam epitaxy techniques. After growth of strained In{sub 0.53}Ga{sub 0.47}As on InP (001) substrate, HfO{sub 2}/Al{sub 2}O{sub 3} high-{kappa} oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (D{sub it}) of the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface have been revealed by conductance measurement, indicating a downward D{sub it} profile from the energy close to the valence band (medium 10{sup 12} cm{sup -2}eV{sup -1}) towards that close to the conduction band (10{sup 11} cm{sup -2}eV{sup -1}). The low D{sub it}'s are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO{sub 2} has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO{sub 2} thickness (dielectric constant of HfO{sub 2}{approx}20) and the remained low D{sub it}'s due to the thin Al{sub 2}O{sub 3} passivation layer. The sample with HfO{sub 2} (3.4 nm)/Al{sub 2}O{sub 3} (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of {approx}0.93 nm.

  6. Experimental demonstration of a controllable electrostatic molecular beam splitter.

    PubMed

    Deng, Lianzhong; Liang, Yan; Gu, Zhenxing; Hou, Shunyong; Li, Shengqiang; Xia, Yong; Yin, Jianping

    2011-04-01

    We experimentally demonstrate a controllable electrostatic beam splitter for guided ND3 molecules with a single Y-shaped charged wire and a homogeneous bias field generated by a charged metallic parallel-plate capacitor. We study the dependences of the splitting ratio R of the guided ND3 beam and its relative guiding efficiency η on the voltage difference between two output arms of the splitter. The influences of the molecular velocity v and the cutting position L on the splitting ratio R are investigated as well, and the guiding and splitting dynamic processes of cold molecules are simulated. Our study shows that the splitting ratio R of our splitter can be conveniently adjusted from 10% to 90% by changing ΔU from -6  kV to +6  kV, and the simulated results are consistent with our experimental ones.

  7. Molecular Beam Optical Stark Spectroscopy of Magnesium Deuteride

    NASA Astrophysics Data System (ADS)

    Steimle, Timothy; Zhang, Ruohan; Wang, Hailing

    2014-06-01

    Light polar, paramagnetic molecules, such as magnesium hydride, MgH, are attractive for slowing and trapping experiments because these molecules have both non-zero permanent electric dipole, μel, and magnetic dipole, μm moments. The permanent electric dipole moment is particularly relevant to Stark deceleration which depends on the ratio of the Stark shift to molecular mass. Here we report on the Stark effect in the (0,0) A2Π - X 2Σ+ band system of a cold molecular beam sample of magnesium deuteride, MgD. The lines associated with the lowest rotational levels are detected for the first time. The field-free spectrum was analyzed to produce an improved set of fine structure parameters for the A2Π(v = 0) state. The observed electric field induced splittings and shifts were analyzed to produce permanent electric dipole moments, μel,of 2.561(10)D and 1.34(8)D for A2Π(v = 0) and X2Σ+(v=0)states, respectively. This is the first molecular beam study of MgD.

  8. Power deposited by a Gaussian beam on a decentered circular aperture

    NASA Astrophysics Data System (ADS)

    Barbeau, Nicolas R.

    1995-10-01

    An expression for the energy or power deposited by a Gaussian beam on a decentered circular aperture is derived. It represents a generalization of the classic laser-beam truncation problem, with applications in the areas of laser scanning, detection theory, lidar, free-space communications, and so on. In addition, it can be used to quantify the effect of alignment errors on laser systems.

  9. Beam-deposited platinum as versatile catalyst for bottom-up silicon nanowire synthesis

    SciTech Connect

    Hibst, N.; Strehle, S.; Knittel, P.; Kranz, C.; Mizaikoff, B.

    2014-10-13

    The controlled localized bottom-up synthesis of silicon nanowires on arbitrarily shaped surfaces is still a persisting challenge for functional device assembly. In order to address this issue, electron beam and focused ion beam-assisted catalyst deposition have been investigated with respect to platinum expected to form a PtSi alloy catalyst for a subsequent bottom-up nanowire synthesis. The effective implementation of pure platinum nanoparticles or thin films for silicon nanowire growth has been demonstrated recently. Beam-deposited platinum contains significant quantities of amorphous carbon due to the organic precursor and gallium ions for a focused ion beam-based deposition process. Nevertheless, silicon nanowires could be grown on various substrates regardless of the platinum purity. Additionally, p-type doping could be realized with diborane whereas n-type doping suppressed a nanowire growth. The rational utilization of this beam-assisted approach enables us to control the localized synthesis of single silicon nanowires at planar surfaces but succeeded also in single nanowire growth at the three-dimensional apex of an atomic force microscopy tip. Therefore, this catalyst deposition method appears to be a unique extension of current technologies to assemble complex nanowire-based devices.

  10. Optical and Scratch Resistant Properties of Diamondlike Carbon Films Deposited with Single and Dual Ion Beams

    NASA Technical Reports Server (NTRS)

    Kussmaul, Michael T.; Bogdanski, Michael S.; Banks, Bruce A.; Mirtich, Michael J.

    1993-01-01

    Amorphous diamond-like carbon (DLC) films were deposited using both single and dual ion beam techniques utilizing filament and hollow cathode ion sources. Continuous DLC films up to 3000 A thick were deposited on fused quartz plates. Ion beam process parameters were varied in an effort to create hard, clear films. Total DLC film absorption over visible wavelengths was obtained using a Perkin-Elmer spectrophotometer. An ellipsometer, with an Ar-He laser (wavelength 6328 A) was used to determine index of refraction for the DLC films. Scratch resistance, frictional, and adherence properties were determined for select films. Applications for these films range from military to the ophthalmic industries.

  11. Optical and scratch resistant properties of diamondlike carbon films deposited with single and dual ion beams

    NASA Technical Reports Server (NTRS)

    Kussmaul, Michael T.; Bogdanski, Michael S.; Banks, Bruce A.; Mirtich, Michael J.

    1993-01-01

    Amorphous diamondlike carbon (DLC) films were deposited using both single and dual ion beam techniques utilizing filament and hollow cathode ion sources. Continuous DLC films up to 3000 A thick were deposited on fused quartz plates. Ion beam process parameters were varied in an effort to create hard, clear films. Total DLC film absorption over visible wavelengths was obtained using a Perkin-Elmer spectrophotometer. An ellipsometer, with an Ar-He laser (wavelength 6328 A) was used to determine index of refraction for the DLC films. Scratch resistance and frictional and adherence properties were determined for select films. Applications for these films range from military to the ophthalmic industries.

  12. Supercritical fluid molecular spray film deposition and powder formation

    DOEpatents

    Smith, Richard D.

    1986-01-01

    Solid films are deposited, or fine powders formed, by dissolving a solid material into a supercritical fluid solution at an elevated pressure and then rapidly expanding the solution through a short orifice into a region of relatively low pressure. This produces a molecular spray which is directed against a substrate to deposit a solid thin film thereon, or discharged into a collection chamber to collect a fine powder. Upon expansion and supersonic interaction with background gases in the low pressure region, any clusters of solvent are broken up and the solvent is vaporized and pumped away. Solute concentration in the solution is varied primarily by varying solution pressure to determine, together with flow rate, the rate of deposition and to control in part whether a film or powder is produced and the granularity of each. Solvent clustering and solute nucleation are controlled by manipulating the rate of expansion of the solution and the pressure of the lower pressure region. Solution and low pressure region temperatures are also controlled.

  13. Hard X-ray multilayer coated astronomical mirrors by e-beam deposition

    NASA Astrophysics Data System (ADS)

    Spiga, Daniele; Pareschi, Giovanni; Grisoni, Gabriele; Valsecchi, Giuseppe

    2004-10-01

    A number of X-ray astronomical missions of near future (Constellation-X, XEUS, Simbol-X) will make use of hard X-rays (10-100 keV) optics with broad-band multilayer coatings. A possible technique under development is based on an extension of the already tested replication of a coated mandrel by e-beam deposition and nickel electroforming already successfully used for the soft (0.1 - 10 keV) X-ray mirrors of the Beppo-SAX, XMM, JET-X/Swift missions. In this case graded multilayers are deposited and replicated from the mandrel replicated instead of a single layer. The roughness reduction in order to improve the coating reflectivity could be achieved by an ion assistance during the e-beam deposition. The e-beam deposition with ion assistance is a technique that allows to reach comparable (if not better) smoothness levels with respect to other methods (e.g. ion sputtering), taking the advantage of a stress mitigation between the layers and of a further improvement in reflectivity due to the low density of the e-beam evaporated Carbon, which is used as bilayer spacer. In this paper we discuss the adopted deposition technique and its implementation: we present topographic (AFM) tests and X-ray reflectivity tests performed on preliminary samples.

  14. Molecular beam epitaxy growth of monolayer niobium diselenide flakes

    NASA Astrophysics Data System (ADS)

    Hotta, Takato; Tokuda, Takuto; Zhao, Sihan; Watanabe, Kenji; Taniguchi, Takashi; Shinohara, Hisanori; Kitaura, Ryo

    2016-09-01

    Monolayer niobium diselenide (NbSe2) is prepared through molecular beam epitaxy with hexagonal boron nitride (hBN) as substrates. Atomic force microscopy and the Raman spectroscopy have shown that the monolayer NbSe2 grown on the hBN possesses triangular or truncated triangular shape whose lateral size amounts up to several hundreds of nanometers. We have found that the precisely controlled supply rate and ultraflat surface of hBN plays an important role in the growth of the monolayer NbSe2.

  15. Molecular beam epitaxy grown indium self-assembled plasmonic nanostructures

    NASA Astrophysics Data System (ADS)

    Gibson, Ricky; Gehl, Michael; Sears, Jasmine; Zandbergen, Sander; Nader, Nima; Keiffer, Patrick; Hendrickson, Joshua; Arnoult, Alexandre; Khitrova, Galina

    2015-09-01

    We describe molecular beam epitaxy (MBE) growth conditions for self-assembled indium nanostructures, or islands, which allow for the tuning of the density and size of the indium nanostructures. How the plasmonic resonance of indium nanostructures is affected by the island density, size, distribution in sizes, and indium purity of the nanostructures is explored. These self-assembled nanostructures provide a platform for integration of resonant and non-resonant plasmonic structures within a few nm of quantum wells (QWs) or quantum dots (QDs) in a single process. A 4× increase in peak photoluminescence intensity is demonstrated for near-surface QDs resonantly coupled to indium nanostructures.

  16. Molecular-Beam Epitaxy Of IrSi3

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon

    1991-01-01

    Molecular-beam epitaxy grows layers of iridium silicide (IrSi3) on silicon at temperatures of 630 to 800 degrees C. Particularly useful as photodetector material because it forms Schottky diodes having potential barriers of only 0.12 to 0.15 eV - lowest of any metal on silicon. Photodiodes sensitive to infrared radiation at wavelengths as large as 8 to 10 micrometers. New, lower formation temperature expected to enable growth of arrays of IrSi3/Si infrared detectors on Si wafers without thermally damaging image-processing circuitry integrated on wafers.

  17. Molecular beam epitaxial growth of GaP on Si

    NASA Astrophysics Data System (ADS)

    Wright, S. L.; Kroemer, H.; Inada, M.

    1984-04-01

    The molecular beam epitaxial growth of GaP on Si was investigated, with the aim of at least approaching device-quality interfaces. Gallium-primed growth on (211)-oriented substrates yielded layers which were free of antiphase domains, and which were of much higher quality than growths on other orientations. A tentative energy-band lineup is proposed, which is consistent with the electrical data. Heterojunction bipolar transistors were fabricated with emitter injection efficiencies up to 90 percent, in spite of indications that the epitaxial emitter layer was far less heavily doped than the base.

  18. Energy deposition of heavy ions in the regime of strong beam-plasma correlations.

    PubMed

    Gericke, D O; Schlanges, M

    2003-03-01

    The energy loss of highly charged ions in dense plasmas is investigated. The applied model includes strong beam-plasma correlation via a quantum T-matrix treatment of the cross sections. Dynamic screening effects are modeled by using a Debye-like potential with a velocity dependent screening length that guarantees the known low and high beam velocity limits. It is shown that this phenomenological model is in good agreement with simulation data up to very high beam-plasma coupling. An analysis of the stopping process shows considerably longer ranges and a less localized energy deposition if strong coupling is treated properly.

  19. Energy deposition of heavy ions in the regime of strong beam-plasma correlations.

    PubMed

    Gericke, D O; Schlanges, M

    2003-03-01

    The energy loss of highly charged ions in dense plasmas is investigated. The applied model includes strong beam-plasma correlation via a quantum T-matrix treatment of the cross sections. Dynamic screening effects are modeled by using a Debye-like potential with a velocity dependent screening length that guarantees the known low and high beam velocity limits. It is shown that this phenomenological model is in good agreement with simulation data up to very high beam-plasma coupling. An analysis of the stopping process shows considerably longer ranges and a less localized energy deposition if strong coupling is treated properly. PMID:12689203

  20. Energy dependence of island nucleation density during ion beam deposition

    NASA Astrophysics Data System (ADS)

    Pomeroy, Joshua M.; Brock, Joel D.

    2002-03-01

    Thin copper films were grown on single crystal copper substrates using highly collimated copper ion beams with precisely controlled incidence energies. The energetic collisions between the copper ions and the surface can form adatom-vacancy pairs or sputter eject atoms into the vaccuum. Island nucleation densities are affected by these atomistic mechanisms, which increase surface adatom densities and surface defect densities. This paper reports STM measurements of the island nucleation density for films grown both thermally and at energies between 10-150 eV. The measured island nucleation density systematically deviates with increasing energy from the density predicted by mean field nucleation theory (J.A. Venables, et.al., Rep. Prog. Phys. 47 (1984) p. 399-459). This deviation can be understood using a phenomenological extension of mean field nucleation theory that includes the effects of adatom-vacancy pair production and sputter ejection on the effective flux.

  1. Annealing of TiO2 Films Deposited on Si by Irradiating Nitrogen Ion Beams

    SciTech Connect

    Yokota, Katsuhiro; Yano, Yoshinori; Miyashita, Fumiyoshi

    2006-11-13

    Thin TiO2 films were deposited on Si at a temperature of 600 deg. C by an ion beam assisted deposition (IBAD) method. The TiO2 films were annealed for 30 min in Ar at temperatures below 700 deg. C. The as-deposited TiO2 films had high permittivities such 200 {epsilon}o and consisted of crystallites that were not preferentially oriented to the c-axis but had an expanded c-axis. On the annealed TiO2 films, permittivities became lower with increasing annealing temperature, and crystallites were oriented preferentially to the (110) plane.

  2. Hyperthermal molecular beam source using a non-diaphragm-type small shock tube

    NASA Astrophysics Data System (ADS)

    Yoshimoto, Yuta; Osuka, Kenichi; Miyoshi, Nobuya; Kinefuchi, Ikuya; Takagi, Shu; Matsumoto, Yoichiro

    2016-10-01

    We have developed a hyperthermal molecular beam source employing a non-diaphragm-type small shock tube for gas-surface interaction studies. Unlike conventional shock-heated beam sources, the capability of repetitive beam generation without the need for replacing a diaphragm makes our beam source suitable for scattering experiments, which require signal accumulation for a large number of beam pulses. The short duration of shock heating alleviates the usual temperature limit due to the nozzle material, enabling the generation of a molecular beam with higher translational energy or that containing dissociated species. The shock-heated beam is substantially free from surface-contaminating impurities that are pronounced in arc-heated beams. We characterize the properties of nitrogen and oxygen molecular beams using the time-of-flight method. When both the timing of beam extraction and the supply quantity of nitrogen gas are appropriately regulated, our beam source can generate a nitrogen molecular beam with translational energy of approximately 1 eV, which corresponds to the typical activation energy of surface reactions. Furthermore, our beam source can generate an oxygen molecular beam containing dissociated oxygen atoms, which can be a useful probe for surface oxidation. The dissociation fraction along with the translational energy can be adjusted through the supply quantity of oxygen gas.

  3. Simulation of electron transport during electron-beam-induced deposition of nanostructures

    PubMed Central

    Jeschke, Harald O; Valentí, Roser

    2013-01-01

    Summary We present a numerical investigation of energy and charge distributions during electron-beam-induced growth of tungsten nanostructures on SiO2 substrates by using a Monte Carlo simulation of the electron transport. This study gives a quantitative insight into the deposition of energy and charge in the substrate and in the already existing metallic nanostructures in the presence of the electron beam. We analyze electron trajectories, inelastic mean free paths, and the distribution of backscattered electrons in different compositions and at different depths of the deposit. We find that, while in the early stages of the nanostructure growth a significant fraction of electron trajectories still interacts with the substrate, when the nanostructure becomes thicker the transport takes place almost exclusively in the nanostructure. In particular, a larger deposit density leads to enhanced electron backscattering. This work shows how mesoscopic radiation-transport techniques can contribute to a model that addresses the multi-scale nature of the electron-beam-induced deposition (EBID) process. Furthermore, similar simulations can help to understand the role that is played by backscattered electrons and emitted secondary electrons in the change of structural properties of nanostructured materials during post-growth electron-beam treatments. PMID:24367747

  4. A comparison of neon versus helium ion beam induced deposition via Monte Carlo simulations.

    PubMed

    Timilsina, Rajendra; Smith, Daryl A; Rack, Philip D

    2013-03-22

    The ion beam induced nanoscale synthesis of PtCx (where x ∼ 5) using the trimethyl (methylcyclopentadienyl)platinum(IV) (MeCpPt(IV)Me3) precursor is investigated by performing Monte Carlo simulations of helium and neon ions. The helium beam leads to more lateral growth relative to the neon beam because of its larger interaction volume. The lateral growth of the nanopillars is dominated by molecules deposited via secondary electrons in both the simulations. Notably, the helium pillars are dominated by SE-I electrons whereas the neon pillars are dominated by SE-II electrons. Using a low precursor residence time of 70 μs, resulting in an equilibrium coverage of ∼4%, the neon simulation has a lower deposition efficiency (3.5%) compared to that of the helium simulation (6.5%). At larger residence time (10 ms) and consequently larger equilibrium coverage (85%) the deposition efficiencies of helium and neon increased to 49% and 21%, respectively; which is dominated by increased lateral growth rates leading to broader pillars. The nanoscale growth is further studied by varying the ion beam diameter at 10 ms precursor residence time. The study shows that total SE yield decreases with increasing beam diameters for both the ion types. However, helium has the larger SE yield as compared to that of neon in both the low and high precursor residence time, and thus pillars are wider in all the simulations studied.

  5. Texture-Induced Anisotropy in an Inconel 718 Alloy Deposited Using Electron Beam Freeform Fabrication

    NASA Technical Reports Server (NTRS)

    Tayon, W.; Shenoy, R.; Bird, R.; Hafley, R.; Redding, M.

    2014-01-01

    A test block of Inconel (IN) 718 was fabricated using electron beam freeform fabrication (EBF(sup 3)) to examine how the EBF(sup 3) deposition process affects the microstructure, crystallographic texture, and mechanical properties of IN 718. Tests revealed significant anisotropy in the elastic modulus for the as-deposited IN 718. Subsequent tests were conducted on specimens subjected to a heat treatment designed to decrease the level of anisotropy. Electron backscatter diffraction (EBSD) was used to characterize crystallographic texture in the as-deposited and heat treated conditions. The anisotropy in the as-deposited condition was strongly affected by texture as evidenced by its dependence on orientation relative to the deposition direction. Heat treatment resulted in a significant improvement in modulus of the EBF(sup 3) product to a level nearly equivalent to that for wrought IN 718 with reduced anisotropy; reduction in texture through recrystallization; and production of a more homogeneous microstructure.

  6. Tribological properties of boron nitride synthesized by ion beam deposition

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.; Spalvins, T.

    1985-01-01

    The adhesion and friction behavior of boron nitride films on 440 C bearing stainless steel substrates was examined. The thin films containing the boron nitride were synthesized using an ion beam extracted from a borazine plasma. Sliding friction experiments were conducted with BN in sliding contact with itself and various transition metals. It is indicated that the surfaces of atomically cleaned BN coating film contain a small amount of oxides and carbides, in addition to boron nitride. The coefficients of friction for the BN in contact with metals are related to the relative chemical activity of the metals. The more active the metal, the higher is the coefficient of friction. The adsorption of oxygen on clean metal and BN increases the shear strength of the metal - BN contact and increases the friction. The friction for BN-BN contact is a function of the shear strength of the elastic contacts. Clean BN surfaces exhibit relatively strong interfacial adhesion and high friction. The presence of adsorbates such as adventitious carbon contaminants on the BN surfaces reduces the shear strength of the contact area. In contrast, chemically adsorbed oxygen enhances the shear strength of the BN-BN contact and increases the friction.

  7. Thermal imaging for assessment of electron-beam freeform fabrication (EBF3) additive manufacturing deposits

    NASA Astrophysics Data System (ADS)

    Zalameda, Joseph N.; Burke, Eric R.; Hafley, Robert A.; Taminger, Karen M.; Domack, Christopher S.; Brewer, Amy; Martin, Richard E.

    2013-05-01

    Additive manufacturing is a rapidly growing field where 3-dimensional parts can be produced layer by layer. NASA's electron beam freeform fabrication (EBF3) technology is being evaluated to manufacture metallic parts in a space environment. The benefits of EBF3 technology are weight savings to support space missions, rapid prototyping in a zero gravity environment, and improved vehicle readiness. The EBF3 system is composed of 3 main components: electron beam gun, multi-axis position system, and metallic wire feeder. The electron beam is used to melt the wire and the multi-axis positioning system is used to build the part layer by layer. To insure a quality deposit, a near infrared (NIR) camera is used to image the melt pool and solidification areas. This paper describes the calibration and application of a NIR camera for temperature measurement. In addition, image processing techniques are presented for deposit assessment metrics.

  8. A molecular beam/quadrupole mass spectrometer system with synchronized beam modulation and digital waveform analysis

    NASA Technical Reports Server (NTRS)

    Pellett, G. L.; Adams, B. R.

    1983-01-01

    A performance evaluation is conducted for a molecular beam/mass spectrometer (MB/MS) system, as applied to a 1-30 torr microwave-discharge flow reactor (MWFR) used in the formation of the methylperoxy radical and a study of its subsequent destruction in the presence or absence of NO(x). The modulated MB/MS system is four-staged and differentially pumped. The results obtained by the MWFR study is illustrative of overall system performance, including digital waveform analysis; significant improvements over previous designs are noted in attainable S/N ratio, detection limit, and accuracy.

  9. Molecular dynamics simulation of the formation of sp3 hybridized bonds in hydrogenated diamondlike carbon deposition processes.

    PubMed

    Murakami, Yasuo; Horiguchi, Seishi; Hamaguchi, Satoshi

    2010-04-01

    The formation process of sp3 hybridized carbon networks (i.e., diamondlike structures) in hydrogenated diamondlike carbon (DLC) films has been studied with the use of molecular-dynamics simulations. The processes simulated in this study are injections of hydrocarbon (CH3 and CH) beams into amorphous carbon (a-C) substrates. It has been shown that diamondlike sp3 structures are formed predominantly at a subsurface level when the beam energy is relatively high, as in the "subplantation" process for hydrogen-free DLC deposition. However, for hydrogenated DLC deposition, the presence of abundant hydrogen at subsurface levels, together with thermal spikes caused by energetic ion injections, substantially enhances the formation of carbon-to-carbon sp3 bonds. Therefore, the sp3 bond formation process for hydrogenated DLC films essentially differs from that for hydrogen-free DLC films.

  10. Characterization of hydroxyapatite film with mixed interface by Ar+ ion beam enhanced deposition.

    PubMed

    Li, X; Weng, J; Tong, W; Zuo, C; Zhang, X; Wang, P; Liu, Z

    1997-11-01

    Ar+ ion beam enhanced deposition (IBED) was used to produce a hydroxyapatite (HA) film on polished titanium substrates. In this study, the HA ceramic target was sputtered by an argon-ion beam with an energy of 1.5 KeV, and the sputtered film was intermittently bombarded by energetic argon-ions at 60 KeV. An effective Ca-Ti mixed layer produced by the energetic argon-ion bombardment was confirmed by using Auger electron spectroscopy. The characteristics of the deposited films were evaluated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses. XRD analysis revealed that the as-deposited film was amorphous, and a hydroxyapatite-type structure was obtained from the post-heat treatment of the deposited films. SEM observations showed that no distinct difference in surface morphology was found between the as-deposited and heat-treated samples for Ar+ IBED films, suggesting a strongly bonded HA film on the titanium substrate. In comparison with the HA target, some chemistry alterations were brought about in the deposited films, such as the incorporation of CO3, the loss of the OH groups and some distortion of the phosphate lattice.

  11. Understanding the high pressure properties of molecular solids and molecular surfaces deposited on hetrogeneous substrates

    NASA Technical Reports Server (NTRS)

    Etters, R. D.

    1985-01-01

    Work directed toward understanding the high pressure properties of molecular solids and molecular surfaces deposited on hetrogeneous substrates is reported. The motivation, apart from expanding our basic knowledge about these systems, was to understand and predict the properties of new materials synthesized at high pressure, including pressure induced metallic and superconducting states. As a consequence, information about the states of matter of the Jovian planets and their satellites, which are natural high pressure laboratories was also provided. The work on molecular surfaces and finite two and three dimensional clusters of atoms and molecules was connected with the composition and behavior of planetary atmospheres and on the processes involved in forming surface layers, which is vital to the development of composite materials and microcircuitry.

  12. Effect of focused ion beam deposition induced contamination on the transport properties of nano devices.

    PubMed

    Lan, Yann-Wen; Chang, Wen-Hao; Chang, Yuan-Chih; Chang, Chia-Seng; Chen, Chii-Dong

    2015-02-01

    Focused ion beam (FIB) deposition produces unwanted particle contamination beyond the deposition point. This is due to the FIB having a Gaussian distribution. This work investigates the spatial extent of this contamination and its influence on the electrical properties of nano-electronic devices. A correlation study is performed on carbon-nanotube (CNT) devices manufactured using FIB deposition. The devices are observed using transmission electron microscopy (TEM) and these images are correlated with device electrical characteristics. To discover how far Pt-nanoparticle contamination occurs along a CNT after FIB electrical contact deposition careful TEM inspections are performed. The results show FIB deposition efficiently improves electrical contact; however, the practice is accompanied by serious particle contamination near deposition points. These contaminants include metal particles and amorphous elements originating from precursor gases and residual water molecules in the vacuum chamber. Pt-contamination extends for approximately 2 μm from the point of FIB contact deposition. These contaminants cause current fluctuations and alter the transport characteristics of devices. It is recommended that nano-device fabrication occurs at a distance greater than 2 μm from the FIB deposition of an electrical contact.

  13. Electron-beam induced deposition and autocatalytic decomposition of Co(CO)3NO

    PubMed Central

    Vollnhals, Florian; Drost, Martin; Tu, Fan; Carrasco, Esther; Späth, Andreas; Fink, Rainer H; Steinrück, Hans-Peter

    2014-01-01

    Summary The autocatalytic growth of arbitrarily shaped nanostructures fabricated by electron beam-induced deposition (EBID) and electron beam-induced surface activation (EBISA) is studied for two precursors: iron pentacarbonyl, Fe(CO)5, and cobalt tricarbonyl nitrosyl, Co(CO)3NO. Different deposits are prepared on silicon nitride membranes and silicon wafers under ultrahigh vacuum conditions, and are studied by scanning electron microscopy (SEM) and scanning transmission X-ray microscopy (STXM), including near edge X-ray absorption fine structure (NEXAFS) spectroscopy. It has previously been shown that Fe(CO)5 decomposes autocatalytically on Fe seed layers (EBID) and on certain electron beam-activated surfaces, yielding high purity, polycrystalline Fe nanostructures. In this contribution, we investigate the growth of structures from Co(CO)3NO and compare it to results obtained from Fe(CO)5. Co(CO)3NO exhibits autocatalytic growth on Co-containing seed layers prepared by EBID using the same precursor. The growth yields granular, oxygen-, carbon- and nitrogen-containing deposits. In contrast to Fe(CO)5 no decomposition on electron beam-activated surfaces is observed. In addition, we show that the autocatalytic growth of nanostructures from Co(CO)3NO can also be initiated by an Fe seed layer, which presents a novel approach to the fabrication of layered nanostructures. PMID:25161851

  14. Electron-beam induced deposition and autocatalytic decomposition of Co(CO)3NO.

    PubMed

    Vollnhals, Florian; Drost, Martin; Tu, Fan; Carrasco, Esther; Späth, Andreas; Fink, Rainer H; Steinrück, Hans-Peter; Marbach, Hubertus

    2014-01-01

    The autocatalytic growth of arbitrarily shaped nanostructures fabricated by electron beam-induced deposition (EBID) and electron beam-induced surface activation (EBISA) is studied for two precursors: iron pentacarbonyl, Fe(CO)5, and cobalt tricarbonyl nitrosyl, Co(CO)3NO. Different deposits are prepared on silicon nitride membranes and silicon wafers under ultrahigh vacuum conditions, and are studied by scanning electron microscopy (SEM) and scanning transmission X-ray microscopy (STXM), including near edge X-ray absorption fine structure (NEXAFS) spectroscopy. It has previously been shown that Fe(CO)5 decomposes autocatalytically on Fe seed layers (EBID) and on certain electron beam-activated surfaces, yielding high purity, polycrystalline Fe nanostructures. In this contribution, we investigate the growth of structures from Co(CO)3NO and compare it to results obtained from Fe(CO)5. Co(CO)3NO exhibits autocatalytic growth on Co-containing seed layers prepared by EBID using the same precursor. The growth yields granular, oxygen-, carbon- and nitrogen-containing deposits. In contrast to Fe(CO)5 no decomposition on electron beam-activated surfaces is observed. In addition, we show that the autocatalytic growth of nanostructures from Co(CO)3NO can also be initiated by an Fe seed layer, which presents a novel approach to the fabrication of layered nanostructures.

  15. Giant magnetoresistance in Co/Cu multilayers fabricated by focused ion-beam direct deposition

    NASA Astrophysics Data System (ADS)

    Nagamachi, Shinji; Ueda, Masahiro; Sakakima, Hiroshi; Satomi, Mitsuo; Ishikawa, Junzo

    1996-10-01

    We report the direct deposition of patterned multilayers that exhibit giant magnetoresistance without any lithographic processes. We fabricated Co/Cu multilayers by the focused ion-beam direct deposition method and measured the magnetoresistance characteristics of the multilayers. The fabricated Co/Cu multilayers are 14×76 μm2 in size and consist of 12 layers of Co thin film with the thickness of 20 Å and 11 layers of Cu thin film with the thickness of 13-22 Å on the GaAs substrate. We used a 108 eV Co2+ ion beam and 54 eV Cu+ ion beam extracted from a Co-Cu-Au-Nb alloy ion source. The measured magnetoresistance ratio of giant magnetoresistance was 6.7% in the case of the Co(20 Å)/Cu(21 Å) multilayer. Experimental results show precise controllability of the thickness and the additional capability of the focused ion-beam direct deposition method.

  16. Crossed-molecular-beams reactive scattering of oxygen atoms

    SciTech Connect

    Baseman, R.J.

    1982-11-01

    The reactions of O(/sup 3/P) with six prototypical unsaturated hydrocarbons, and the reaction of O(/sup 1/D) with HD, have been studied in high-resolution crossed-molecular-beams scattering experiments with mass-spectrometric detection. The observed laboratory-product angular and velocity distributions unambiguously identify parent-daughter ion pairs, distinguish different neutral sources of the same ion, and have been used to identify the primary products of the reactions. The derived center-of-mass product angular and translational energy distributions have been used to elucidate the detailed reaction dynamics. These results demonstrate that O(/sup 3/P)-unsaturated hydrocarbon chemistry is dominated by single bond cleavages, leading to radical products exclusively.

  17. Molecular beam-thermal hydrogen desorption from palladium

    SciTech Connect

    Lobo, R. F. M.; Berardo, F. M. V.; Ribeiro, J. H. F.

    2010-04-15

    Among the most efficient techniques for hydrogen desorption monitoring, thermal desorption mass spectrometry is a very sensitive one, but in certain cases can give rise to uptake misleading results due to residual hydrogen partial pressure background variations. In this work one develops a novel thermal desorption variant based on the effusive molecular beam technique that represents a significant improvement in the accurate determination of hydrogen mass absorbed on a solid sample. The enhancement in the signal-to-noise ratio for trace hydrogen is on the order of 20%, and no previous calibration with a chemical standard is required. The kinetic information obtained from the hydrogen desorption mass spectra (at a constant heating rate of 1 deg. C/min) accounts for the consistency of the technique.

  18. InPBi Single Crystals Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Wang, K.; Gu, Y.; Zhou, H. F.; Zhang, L. Y.; Kang, C. Z.; Wu, M. J.; Pan, W. W.; Lu, P. F.; Gong, Q.; Wang, S. M.

    2014-06-01

    InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V = P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III-V compound family member for heterostructures. The Bi concentration is found to be 2.4 +/- 0.4% with 94 +/- 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4-2.7 μm which can't be explained by the existing theory.

  19. InPBi Single Crystals Grown by Molecular Beam Epitaxy

    PubMed Central

    Wang, K.; Gu, Y.; Zhou, H. F.; Zhang, L. Y.; Kang, C. Z.; Wu, M. J.; Pan, W. W.; Lu, P. F.; Gong, Q.; Wang, S. M.

    2014-01-01

    InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V = P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III–V compound family member for heterostructures. The Bi concentration is found to be 2.4 ± 0.4% with 94 ± 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4–2.7 μm which can't be explained by the existing theory. PMID:24965260

  20. Atmospheric processes on ice nanoparticles in molecular beams

    PubMed Central

    Fárník, Michal; Poterya, Viktoriya

    2014-01-01

    This review summarizes some recent experiments with ice nanoparticles (large water clusters) in molecular beams and outlines their atmospheric relevance: (1) Investigation of mixed water–nitric acid particles by means of the electron ionization and sodium doping combined with photoionization revealed the prominent role of HNO3 molecule as the condensation nuclei. (2) The uptake of atmospheric molecules by water ice nanoparticles has been studied, and the pickup cross sections for some molecules exceed significantly the geometrical sizes of the ice nanoparticles. (3) Photodissociation of hydrogen halides on water ice particles has been shown to proceed via excitation of acidically dissociated ion pair and subsequent biradical generation and H3O dissociation. The photodissociation of CF2Cl2 molecules in clusters is also mentioned. Possible atmospheric consequences of all these results are briefly discussed. PMID:24790973

  1. A hydrogen ion beam method of molecular density measurement inside a 4.2-K beam tube

    SciTech Connect

    Alinovsky, N.; Anashin, V.; Beschasny, P.

    1994-06-01

    In our first experiments on synchrotron radiation-induced photodesorption in a 4.2-K beam tube, the moleculm density was measured by room temperature ion gauges and RGAs outside the beam tube. The molecular density inside the 4.2-K beam tube was therefore unknown, since the mean molecular speed of photodesorbed molecules had not been measured. To determine the density inside the 4.2-K beam tube we have developed a direct method of measurement utilizing the neutralization of H{sup +} beams, which are proportional to gas density. The hydrogen ion beams (up to 20 keV, {approximately}1 {mu}A) are extracted from an rf ion source and guided into the cold beam tube by a bending magnet. The H{sup 0} and H{sup {minus}} produced in the beam tube are magnetically separated from H{sup {minus}} and detected with secondary electron multipliers (SEMs). Small superconducting dipole magnets located near the center of the beam tube allow a {approximately}20-cm segment of the injected ion beam to be offset a few mm from the injection axis; detection of H{sup 0} and H{sup {minus}} produced along this offset segment provides a localized density measurement. If necessary, detector background due to synchrotron radiation photons can be discriminated against by gating the detector on between the bursts of synchrotron radiation. The experimental setup and initial data will be presented.

  2. A high pressure modulated molecular beam mass spectrometric sampling system

    NASA Technical Reports Server (NTRS)

    Stearns, C. A.; Kohl, F. J.; Fryburg, G. C.; Miller, R. A.

    1977-01-01

    The current state of understanding of free-jet high pressure sampling is critically reviewed and modifications of certain theoretical and empirical considerations are presented. A high pressure, free-jet expansion, modulated molecular beam, mass spectrometric sampling apparatus was constructed and this apparatus is described in detail. Experimental studies have demonstrated that the apparatus can be used to sample high temperature systems at pressures up to one atmosphere. Condensible high temperature gaseous species have been routinely sampled and the mass spectrometric detector has provided direct identification of sampled species. System sensitivity is better than one tenth of a part per million. Experimental results obtained with argon and nitrogen beams are presented and compared to theoretical predictions. These results and the respective comparison are taken to indicate acceptable performance of the sampling apparatus. Results are also given for two groups of experiments related to hot corrosion studies. The formation of gaseous sodium sulfate in doped methane-oxygen flames was characterized and the oxidative vaporization of metals was studied in an atmospheric pressure flowing gas system to which gaseous salt partial pressures were added.

  3. Electron flux controlled switching between electron beam induced etching and deposition

    NASA Astrophysics Data System (ADS)

    Toth, Milos; Lobo, Charlene J.; Hartigan, Gavin; Ralph Knowles, W.

    2007-03-01

    Electron beam induced deposition (EBID) and etching (EBIE) are promising methods for the fabrication of three-dimensional nanodevices, wiring of nanostructures, and repair of photolithographic masks. Here, we study simultaneous EBID and EBIE, and demonstrate an athermal electron flux controlled transition between material deposition and etching. The switching is observed when one of the processes has both a higher efficiency and a lower precursor partial pressure than the other. This is demonstrated in two technologically important systems: during XeF2-mediated etching of chrome on a photolithographic mask and during deposition and etching of carbonaceous films on a semiconductor surface. Simultaneous EBID and EBIE can be used to enhance the spatial localization of etch profiles. It plays a key role in reducing contamination buildup rates during low vacuum electron imaging and deposition of high purity nanostructures in the presence of oxygen-containing gases.

  4. Vacuum Ultraviolet Radiation Desorption of Molecular Contaminants Deposited on Quartz Crystal Microbalances

    NASA Technical Reports Server (NTRS)

    Albyn, Keith; Burns, Dewitt

    2006-01-01

    Recent quartz crystal microbalance measurements made in the Marshall Space Flight Center, Photo-Deposition Facility, for several materials, recorded a significant loss of deposited contaminants when the deposition surface of the microbalance was illuminated by a deuterium lamp. These measurements differ from observations made by other investigators in which the rate of deposition increased significantly when the deposition surface was illuminated with vacuum ultraviolet radiation. These observations suggest that the accelerated deposition of molecular contaminants on optically sensitive surfaces is dependant upon the contaminant being deposited and must be addressed during the materials selection process by common material screening techniques.

  5. Ion beam sputter deposition of TiNi shape memory alloy thin films

    NASA Astrophysics Data System (ADS)

    Davies, Sam T.; Tsuchiya, Kazuyoshi

    1999-08-01

    The development of functional or smart materials for integration into microsystem is of increasing interest. An example is the shape memory effect exhibited by certain metal alloys which, in principle, can be exploited in the fabrication of micro-scale manipulators or actuators, thereby providing on-chip micromechanical functionality. We have investigated an ion beam sputter deposition process for the growth of TiNi shape memory alloy thin films and demonstrated the required control to produce equiatomic composition, uniform coverage and atomic layer-by-layer growth rates on engineering surfaces. The process uses argon ions at intermediate energy produced by a Kaufman-type ion source to sputter non-alloyed targets of high purity titanium and nickel. Precise measurements of deposition rates allows compositional control during thin film growth. As the sputtering targets and substrates are remote from the discharge plasma, deposition occurs under good vacuum of approximately 10-6 mtorr thus promoting high quality films. Furthermore, the ion beam energetics allow deposition at relatively low substrate temperatures of < 150 degrees C with as-deposited films exhibiting shape memory properties without post-process high temperature annealing. Thermal imagin is used to monitor changes which are characteristic of the shape memory effect and is indicative of changes in specific heat capacity and thermal conductivity as the TiNi shape memory alloy undergoes martensitic to austenitic phase transformations.

  6. Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Dangwal Pandey, A.; Krausert, K.; Franz, D.; Grânäs, E.; Shayduk, R.; Müller, P.; Keller, T. F.; Noei, H.; Vonk, V.; Stierle, A.

    2016-08-01

    Heteroepitaxial iridium thin films were deposited on (0001) sapphire substrates by means of molecular beam epitaxy, and subsequently, one monolayer of graphene was synthesized by chemical vapor deposition. The influence of the growth parameters on the quality of the Ir films, as well as of graphene, was investigated systematically by means of low energy electron diffraction, x-ray reflectivity, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Our study reveals (111) oriented iridium films with high crystalline quality and extremely low surface roughness, on which the formation of large-area epitaxial graphene is achieved. The presence of defects, like dislocations, twins, and 30° rotated domains in the iridium films is also discussed. The coverage of graphene was found to be influenced by the presence of 30° rotated domains in the Ir films. Low iridium deposition rates suppress these rotated domains and an almost complete coverage of graphene was obtained. This synthesis route yields inexpensive, air-stable, and large-area graphene with a well-defined orientation, making it accessible to a wider community of researchers for numerous experiments or applications, including those which use destructive analysis techniques or irreversible processes. Moreover, this approach can be used to tune the structural quality of graphene, allowing a systematic study of the influence of defects in various processes like intercalation below graphene.

  7. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  8. Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wofford, Joseph M.; Speck, Florian; Seyller, Thomas; Lopes, Joao Marcelo J.; Riechert, Henning

    2016-07-01

    The efficacy of Ni as a surfactant to improve the crystalline quality of graphene grown directly on dielectric Al2O3(0001) substrates by molecular beam epitaxy is examined. Simultaneously exposing the substrate to a Ni flux throughout C deposition at 950 °C led to improved charge carrier mobility and a Raman spectrum indicating less structural disorder in the resulting nanocrystalline graphene film. X-ray photoelectron spectroscopy confirmed that no residual Ni could be detected in the film and showed a decrease in the intensity of the defect-related component of the C1s level. Similar improvements were not observed when a lower substrate temperature (850 °C) was used. A close examination of the Raman spectra suggests that Ni reduces the concentration of lattice vacancies in the film, possibly by catalytically assisting adatom incorporation.

  9. Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy

    SciTech Connect

    Corrion, A. L.; Wu, F.; Speck, J. S.

    2012-09-01

    c-plane GaN films were grown by ammonia molecular beam epitaxy on metal-organic chemical vapor deposition templates for a wide range of NH{sub 3}:Ga flux ratios and growth temperatures, and the resulting films were characterized using atomic force microscopy, reflection high-energy electron diffraction, and transmission electron microscopy. Three distinct nitrogen-rich growth regimes - unstable layer-by-layer, quasi-stable step flow, and dislocation-mediated pitting - were identified based on the growth mode and film properties. In addition, step flow growth was observed under conditions of gallium droplet accumulation. The results indicate the existence of two regimes for step-flow growth of GaN by ammonia MBE - both gallium-rich and nitrogen-rich. Growth mode instabilities and mound formation were observed and are discussed in the context of a step-edge energy barrier to adatom diffusion over a terrace.

  10. Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

    SciTech Connect

    Nakhaie, S.; Wofford, J. M.; Schumann, T.; Jahn, U.; Ramsteiner, M.; Hanke, M.; Lopes, J. M. J. Riechert, H.

    2015-05-25

    Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.

  11. Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

    PubMed Central

    Baiutti, Federico; Christiani, Georg

    2014-01-01

    Summary In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2− xSrxNiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control. PMID:24995148

  12. Percolation of gallium dominates the electrical resistance of focused ion beam deposited metals

    SciTech Connect

    Faraby, H.; DiBattista, M.; Bandaru, P. R.

    2014-04-28

    Metal deposition through focused ion beam (FIB) based systems is thought to result in material composed of the primary metal from the metallo-organic precursor in addition to carbon, oxygen, and gallium. We determined, through electrical resistance and chemical composition measurements on a wide range of FIB deposited platinum and tungsten lines, that the gallium ion (Ga{sup +}) concentration in the metal lines plays the dominant role in controlling the electrical resistivity. Effective medium theory, based on McLachlan's formalisms, was used to describe the relationship between the Ga{sup +} concentration and the corresponding resistivity.

  13. Role of activated chemisorption in gas-mediated electron beam induced deposition.

    PubMed

    Bishop, James; Lobo, Charlene J; Martin, Aiden; Ford, Mike; Phillips, Matthew; Toth, Milos

    2012-10-01

    Models of adsorbate dissociation by energetic electrons are generalized to account for activated sticking and chemisorption, and used to simulate the rate kinetics of electron beam induced chemical vapor deposition (EBID). The model predicts a novel temperature dependence caused by thermal transitions from physisorbed to chemisorbed states that govern adsorbate coverage and EBID rates at elevated temperatures. We verify these results by experiments that also show how EBID can be used to deposit high purity materials and characterize the rates and energy barriers that govern adsorption.

  14. Room temperature operational single electron transistor fabricated by focused ion beam deposition

    NASA Astrophysics Data System (ADS)

    Karre, P. Santosh Kumar; Bergstrom, Paul L.; Mallick, Govind; Karna, Shashi P.

    2007-07-01

    We present the fabrication and room temperature operation of single electron transistors using 8nm tungsten islands deposited by focused ion beam deposition technique. The tunnel junctions are fabricated using oxidation of tungsten in peracetic acid. Clear Coulomb oscillations, showing charging and discharging of the nanoislands, are seen at room temperature. The device consists of an array of tunnel junctions; the tunnel resistance of individual tunnel junction of the device is calculated to be as high as 25.13GΩ. The effective capacitance of the array of tunnel junctions was found to be 0.499aF, giving a charging energy of 160.6meV.

  15. Growth of cluster assembled ZnO film by nanocluster beam deposition technique

    SciTech Connect

    Halder, Nilanjan

    2015-06-24

    ZnO is considered as one of the most promising material for optoelectronic devices. The present work emphasizes production of cluster assembled ZnO films by a UHV nanocluster beam deposition technique where the nanoclusters were produced in a laser vaporization cluster source. The microstructural and the optical properties of the ZnO nanocluster film deposited were investigated. As the wet chemical processes are not compatible with current solid state methods of device fabrication, therefore alternative UHV technique described in the paper is the need of the hour.

  16. Cerenkov emission induced by external beam radiation stimulates molecular fluorescence

    SciTech Connect

    Axelsson, Johan; Davis, Scott C.; Gladstone, David J.; Pogue, Brian W.

    2011-07-15

    Purpose: Cerenkov emission is induced when a charged particle moves faster than the speed of light in a given medium. Both x-ray photons and electrons produce optical Cerenkov photons in everyday radiation therapy of tissue; yet, this phenomenon has never been fully documented. This study quantifies the emissions and also demonstrates that the Cerenkov emission can excite a fluorophore, protoporphyrin IX (PpIX), embedded in biological phantoms. Methods: In this study, Cerenkov emission induced by radiation from a clinical linear accelerator is investigated. Biological mimicking phantoms were irradiated with x-ray photons, with energies of 6 or 18 MV, or electrons at energies 6, 9, 12, 15, or 18 MeV. The Cerenkov emission and the induced molecular fluorescence were detected by a camera or a spectrometer equipped with a fiber optic cable. Results: It is shown that both x-ray photons and electrons, at MeV energies, produce optical Cerenkov photons in tissue mimicking media. Furthermore, we demonstrate that the Cerenkov emission can excite a fluorophore, protoporphyrin IX (PpIX), embedded in biological phantoms. Conclusions: The results here indicate that molecular fluorescence monitoring during external beam radiotherapy is possible.

  17. Highly conductive and pure gold nanostructures grown by electron beam induced deposition

    PubMed Central

    Shawrav, Mostafa M.; Taus, Philipp; Wanzenboeck, Heinz D.; Schinnerl, M.; Stöger-Pollach, M.; Schwarz, S.; Steiger-Thirsfeld, A.; Bertagnolli, Emmerich

    2016-01-01

    This work introduces an additive direct-write nanofabrication technique for producing extremely conductive gold nanostructures from a commercial metalorganic precursor. Gold content of 91 atomic % (at. %) was achieved by using water as an oxidative enhancer during direct-write deposition. A model was developed based on the deposition rate and the chemical composition, and it explains the surface processes that lead to the increases in gold purity and deposition yield. Co-injection of an oxidative enhancer enabled Focused Electron Beam Induced Deposition (FEBID)—a maskless, resistless deposition method for three dimensional (3D) nanostructures—to directly yield pure gold in a single process step, without post-deposition purification. Gold nanowires displayed resistivity down to 8.8 μΩ cm. This is the highest conductivity achieved so far from FEBID and it opens the possibility of applications in nanoelectronics, such as direct-write contacts to nanomaterials. The increased gold deposition yield and the ultralow carbon level will facilitate future applications such as the fabrication of 3D nanostructures in nanoplasmonics and biomolecule immobilization. PMID:27666531

  18. Optimization of ion assist beam deposition of magnesium oxide template films during initial nucleation and growth

    SciTech Connect

    Groves, James R; Matias, Vladimir; Stan, Liliana; De Paula, Raymond F; Hammond, Robert H; Clemens, Bruce M

    2010-01-01

    Recent efforts in investigating the mechanism of ion beam assisted deposition (IBAD) of biaxially textured thin films of magnesium oxide (MgO) template layers have shown that the texture develops suddenly during the initial 2 nm of deposition. To help understand and tune the behavior during this initial stage, we pre-deposited thin layers of MgO with no ion assist prior to IBAD growth of MgO. We found that biaxial texture develops for pre-deposited thicknesses < 2 nm, and that the thinnest layer tested, at 1 nm, resulted in the best qualitative RHEED image, indicative of good biaxial texture development. The texture developed during IBAD growth on the 1.5 nm pre-deposited layer is slightly worse and IBAD growth on the 2 nm pre-deposited layer produces a fiber texture. Application of these layers on an Al{sub 2}O{sub 3} starting surface, which has been shown to impede texture development, improves the overall quality of the IBAD MgO and has some of the characteristics of a biaxially texture RHEED pattern. It is suggested that the use of thin (<2 nm) pre-deposited layers may eliminate the need for bed layers like Si{sub 3}N{sub 4} and Y{sub 2}O{sub 3} that are currently thought to be required for proper biaxial texture development in IBAD MgO.

  19. Microstructural comparisons of ultrathin Cu films deposited by ion-beam and dc-magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Prater, W. L.; Allen, E. L.; Lee, W.-Y.; Toney, M. F.; Kellock, A.; Daniels, J. S.; Hedstrom, J. A.; Harrell, T.

    2005-05-01

    We report and contrast both the electrical resistance and the microstructure of copper thin films deposited in an oxygen-containing atmosphere by ion-beam and dc-magnetron sputtering. For films with thicknesses of 5 nm or less, the resistivity of the Cu films is minimized at oxygen concentrations ranging from 0.2% to 1% for dc-magnetron sputtering and 6%-10% for ion-beam sputtering. Films sputtered under both conditions show a similar decrease of interface roughness with increasing oxygen concentration, although the magnetron-deposited films are smoother. The dc-magnetron-produced films have higher resistivity, have smaller Cu grains, and contain a higher concentration of cuprous oxide particles. We discuss the mechanisms leading to the grain refinement and the consequent reduced resistivity in both types of films.

  20. Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

    NASA Astrophysics Data System (ADS)

    Kim, Ki Seok; Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young; Kim, Kyong Nam

    2016-05-01

    The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar+ ion beam, we cleaned the polymer residue without damaging the graphene network. HfO2 grown by atomic layer deposition on graphene cleaned using an Ar+ ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar+ ion cleaning) showed a non-uniform structure. A graphene-HfO2-metal capacitor fabricated by growing 20-nm thick HfO2 on graphene exhibited a very low leakage current (<10-11 A/cm2) for Ar+ ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

  1. Development of Ultra Small Shock Tube for High Energy Molecular Beam Source

    SciTech Connect

    Miyoshi, Nobuya; Nagata, Shuhei; Kinefuchi, Ikuya; Shimizu, Kazuya; Matsumoto, Yoichiro; Takagi, Shu

    2008-12-31

    A molecular beam source exploiting a small shock tube is described for potential generation of high energy beam in a range of 1-5 eV without any undesirable impurities. The performance of a non-diaphragm type shock tube with an inner diameter of 2 mm was evaluated by measuring the acceleration and attenuation process of shock waves. With this shock tube installed in a molecular beam source, we measured the time-of-flight distributions of shock-heated beams, which demonstrated the ability of controlling the beam energy with the initial pressure ratio of the shock tube.

  2. Ion beam deposition and surface characterization of thin multi-component oxide films during growth.

    SciTech Connect

    Krauss, A.R.; Im, J.; Smentkowski, V.; Schultz, J.A.; Auciello, O.; Gruen, D.M.; Holocek, J.; Chang, R.P.H.

    1998-01-13

    Ion beam deposition of either elemental targets in a chemically active gas such as oxygen or nitrogen, or of the appropriate oxide or nitride target, usually with an additional amount of ambient oxygen or nitrogen present, is an effective means of depositing high quality oxide and nitride films. However, there are a number of phenomena which can occur, especially during the production of multicomponent films such as the ferroelectric perovskites or high temperature superconducting oxides, which make it desirable to monitor the composition and structure of the growing film in situ. These phenomena include thermodynamic (Gibbsian), and oxidation or nitridation-driven segregation, enhanced oxidation or nitridation through production of a highly reactive gas phase species such as atomic oxygen or ozone via interaction of the ion beam with the target, and changes in the film composition due to preferential sputtering of the substrate via primary ion backscattering and secondary sputtering of the film. Ion beam deposition provides a relatively low background pressure of the sputtering gas, but the ambient oxygen or nitrogen required to produce the desired phase, along with the gas burden produced by the ion source, result in a background pressure which is too high by several orders of magnitude to perform in situ surface analysis by conventional means. Similarly, diamond is normally grown in the presence of a hydrogen atmosphere to inhibit the formation of the graphitic phase.

  3. Power deposition measurements at 800 MeV-direct proton beam heating of target materials

    SciTech Connect

    Quintana, D.L.; Langenbrunner, J.; Morgan, G.

    1999-07-01

    A slug calorimetric sensor with several novel design features was developed to measure the power deposition in a cylindrical test article with lead, aluminum, polyethylene and tungsten components. A small, solid slug (volume = 347.5 mm{sup 3}) was suspended by Kevlar fibers and surrounded by an adiabatic enclosure in an insulating vacuum canister of stainless steel construction. A small, calibrated, 100-kOhm thermistor was placed in the slug to monitor the temperature. Power deposition caused by the passage of radiation through the slug was measured from the rate of temperature rise. Lead, tungsten, and Inconel-718 slugs were placed on the beam axis of the test article and were irradiated with an 800 MeV proton beam. The data from these sensors will provide an accurate determination of thermal power density and energy deposition from proton beams incident on target/blanket components of accelerator-based systems, such as the Accelerator Production of Tritium (APT) and the Spallation Neutron Source (SNS).

  4. Synchrotron radiation x-ray beam profile monitor using chemical vapor deposition diamond film

    SciTech Connect

    Kudo, Togo; Takahashi, Sunao; Nariyama, Nobuteru; Hirono, Toko; Tachibana, Takeshi; Kitamura, Hideo

    2006-12-15

    Photoluminescence (PL) of a Si-doped polycrystalline diamond film fabricated using the chemical vapor deposition technique was employed to measure the profile of a synchrotron radiation pink x-ray beam emitted from an in-vacuum hybrid undulator at the SPring-8 facility. The spectrum of the section of the diamond film penetrated by the emitted visible red light exhibited a peak at 739 nm and a wideband structure extending from 550 to 700 nm. The PL intensity increased with the absorbed dose of the incident beam in the diamond within a dynamic range of 10{sup 3}. A two-dimensional distribution of the PL intensity revealed the undulator beam profile.

  5. 'Soft' Au, Pt and Cu contacts for molecular junctions through surface-diffusion-mediated deposition.

    PubMed

    Bonifas, Andrew P; McCreery, Richard L

    2010-08-01

    Virtually all types of molecular electronic devices depend on electronically addressing a molecule or molecular layer through the formation of a metallic contact. The introduction of molecular devices into integrated circuits will probably depend on the formation of contacts using a vapour deposition technique, but this approach frequently results in the metal atoms penetrating or damaging the molecular layer. Here, we report a method of forming 'soft' metallic contacts on molecular layers through surface-diffusion-mediated deposition, in which the metal atoms are deposited remotely and then diffuse onto the molecular layer, thus eliminating the problems of penetration and damage. Molecular junctions fabricated by this method exhibit excellent yield (typically >90%) and reproducibility, and allow examination of the effects of molecular-layer structure, thickness and contact work function.

  6. Focused Electron and Ion Beam Induced Deposition on Flexible and Transparent Polycarbonate Substrates.

    PubMed

    Peinado, Patricia; Sangiao, Soraya; De Teresa, José M

    2015-06-23

    The successful application of focused electron (and ion) beam induced deposition techniques for the growth of nanowires on flexible and transparent polycarbonate films is reported here. After minimization of charging effects in the substrate, sub-100 nm-wide Pt, W, and Co nanowires have been grown and their electrical conduction is similar compared to the use of standard Si-based substrates. Experiments where the substrate is bent in a controlled way indicate that the electrical conduction is stable up to high bending angles, >50°, for low-resistivity Pt nanowires grown by the ion beam. On the other hand, the resistance of Pt nanowires grown by the electron beam changes significantly and reversibly with the bending angle. Aided by the substrate transparency, a diffraction grating in transmission mode has been built based on the growth of an array of Pt nanowires that shows sharp diffraction spots. The set of results supports the large potential of focused beam deposition as a high-resolution nanolithography technique on transparent and flexible substrates. The most promising applications are expected in flexible nano-optics and nanoplasmonics, flexible electronics, and nanosensing.

  7. Electrical transport and breakdown in graphene multilayers loaded with electron beam induced deposited platinum.

    PubMed

    Kulshrestha, Neha; Misra, Abhishek; Koratkar, Nikhil; Misra, D S

    2013-04-24

    We demonstrate here the effect of electron beam induced deposited platinum on the electrical transport through multilayer graphene sheets. Platinum metal is deposited at different positions on the graphene multilayers, i.e., including as well as excluding the bottom contact sites and the change in electrical conductance of the same multilayer graphene sheets before and after platinum deposition is segregated. An improvement in electrical conductance is observed even if the metal is deposited at the part of the graphene sheets that does not touch the bottom gold electrodes, and hence this experimental approach directly demonstrates that the contact improvement is not the sole reason for the improved electrical conduction. The improvement in electrical performance of the graphene sheets is explained in terms of the doping of graphene sheets caused by the charge transfer between the deposited metal and the graphene and thereby modified density of states for electrical conduction. Metal deposition also leads to the increased interlayer interaction of the graphene sheets as revealed by the transmission electron microscopy analysis. Further, two types of breakdown behaviors viz. sharp and stepped breakdowns observed for these graphene devices are explained in terms of the effective graphene-metal contact area. These studies reveal the implications of top metal contact fabrication on graphene for electronic devices.

  8. Data Analyses in Molecular Beam Experiments: Theory and Application.

    NASA Astrophysics Data System (ADS)

    Bandukwalla Pruisken, Gulnar

    The first part of this work deals with the general subject of data analysis in molecular beam experiments. We develop new and general schemes for extracting the centre -of-mass frame differential photodissociation cross section from the fragment time-of-flight (TOF) distributions obtained in laboratory experiments. The methodology involves elementary numerical computations and naturally incorporates the experimental resolution and statistical error analysis. As an important part of these developments, we perform a series of computer experiments which simulate the true situation in the laboratory. These simulations produce 'synthetic' TOF data and provide a perfect medium for testing and further developing our ideas on data analysis. Our studies have resulted in a particularly simple and powerful iterative procedure which we call the 'Inverse Quadrature Method'. This approach is a variant on the Gauss Quadrature technique for numerical integration and satisfies our criteria for TOF data analysis in the most efficient manner. We have also introduced another method called the 'Method of Moments' which is particularly suited for on-line data analysis. In the second part of this work, the new methodology is applied to a real laboratory experiment. We report the results of the one and two photon dissociation of Fe(CO) _5 at 248 nm. The experiment was done using a crossed laser-molecular beam set up with a rotatable mass spectrometer. Time of flight spectra of the primary iron containing photofragments were recorded under collision free conditions. The centre-of-mass velocity distributions extracted from the TOF data indicate that the one photon absorption process involves a sequential uncorrelated loss of CO ligands but is not governed by Boltzmann statistics. Model calculations based on the Separate Statistical Ensemble (SSE) theory show the right behavior but do not provide quantitative agreement with our experimental data. For the two photon dissociation of FE(CO)_5

  9. Exchange bias in polycrystalline magnetite films made by ion-beam assisted deposition

    SciTech Connect

    Kaur, Maninder; Jiang, Weilin; Qiang, You; Burks, Edward; Liu, Kai; Namavar, Fereydoon; Mccloy, John S.

    2014-11-03

    Iron oxide films were deposited onto Si substrates using ion-beam-assisted deposition. The films were ~300 nm thick polycrystalline magnetite with an average crystallite size of ~6 nm. Additionally, incorporation of significant fractions of argon in the films from ion bombardment is evident from chemical analysis, and Fe/O ratios are lower than expected from pure magnetite. However, Raman spectroscopy and x-ray diffraction both indicate that the films are single-phase magnetite. Since no direct evidence of a second phase could be found, exchange bias likely arises due to defects at grain boundaries, possibly amorphous, creating frustrated spins. Since these samples have such small grains, a large fraction of the material consists of grain boundaries, where spins are highly disordered and reverse independently with external field. The high energy deposition process results in an oxygen-rich, argon-containing magnetite film with low temperature exchange bias due to defects at the high concentration of grain boundaries.

  10. Thermal conductivity and nanocrystalline structure of platinum deposited by focused ion beam.

    PubMed

    Alaie, Seyedhamidreza; Goettler, Drew F; Jiang, Ying-Bing; Abbas, Khawar; Baboly, Mohammadhosein Ghasemi; Anjum, D H; Chaieb, S; Leseman, Zayd C

    2015-02-27

    Pt deposited by focused ion beam (FIB) is a common material used for attachment of nanosamples, repair of integrated circuits, and synthesis of nanostructures. Despite its common use little information is available on its thermal properties. In this work, Pt deposited by FIB is characterized thermally, structurally, and chemically. Its thermal conductivity is found to be substantially lower than the bulk value of Pt, 7.2 W m(-1) K(-1) versus 71.6 W m(-1) K(-1) at room temperature. The low thermal conductivity is attributed to the nanostructure of the material and its chemical composition. Pt deposited by FIB is shown, via aberration corrected TEM, to be a segregated mix of nanocrystalline Pt and amorphous C with Ga and O impurities. Ga impurities mainly reside in the Pt while O is homogeneously distributed throughout. The Ga impurity, small grain size of the Pt, and the amorphous carbon between grains are the cause for the low thermal conductivity of this material. Since Pt deposited by FIB is a common material for affixing samples, this information can be used to assess systematic errors in thermal characterization of different nanosamples. This application is also demonstrated by thermal characterization of two carbon nanofibers and a correction using the reported thermal properties of the Pt deposited by FIB. PMID:25649468

  11. Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure

    SciTech Connect

    Coelho, S. M. M.; Auret, F. D.; Janse van Rensburg, P. J.; Nel, J. M.

    2013-11-07

    Schottky barrier diodes prepared by electron beam deposition (EBD) on Sb-doped n-type Ge were characterized using deep level transient spectroscopy (DLTS). Pt EBD diodes manufactured with forming gas in the chamber had two defects, E{sub 0.28} and E{sub 0.31}, which were not previously observed after EBD. By shielding the samples mechanically during EBD, superior diodes were produced with no measureable deep levels, establishing that energetic ions created in the electron beam path were responsible for the majority of defects observed in the unshielded sample. Ge samples that were first exposed to the conditions of EBD, without metal deposition (called electron beam exposure herein), introduced a number of new defects not seen after EBD with only the E-center being common to both processes. Substantial differences were noted when these DLTS spectra were compared to those obtained using diodes irradiated by MeV electrons or alpha particles indicating that very different defect creation mechanisms are at play when too little energy is available to form Frenkel pairs. These observations suggest that when EBD ions and energetic particles collide with the sample surface, inducing intrinsic non-localised lattice excitations, they modify defects deeper in the semiconductor thus rendering them observable.

  12. Characterization and performance of carbon films deposited by plasma and ion beam based techniques

    SciTech Connect

    Walter, K.C.; Kung, H.; Levine, T.

    1994-12-31

    Plasma and ion beam based techniques have been used to deposit carbon-based films. The ion beam based method, a cathodic arc process, used a magnetically mass analyzed beam and is inherently a line-of-sight process. Two hydrocarbon plasma-based, non-line-of-sight techniques were also used and have the advantage of being capable of coating complicated geometries. The self-bias technique can produce hard carbon films, but is dependent on rf power and the surface area of the target. The pulsed-bias technique can also produce hard carbon films but has the additional advantage of being independent of rf power and target surface area. Tribological results indicated the coefficient of friction is nearly the same for carbon films from each deposition process, but the wear rate of the cathodic arc film was five times less than for the self-bias or pulsed-bias films. Although the cathodic arc film was the hardest, contained the highest fraction of sp{sup 3} bonds and exhibited the lowest wear rate, the cathodic arc film also produced the highest wear on the 440C stainless steel counterface during tribological testing. Thus, for tribological applications requiring low wear rates for both counterfaces, coating one surface with a very hard, wear resistant film may detrimentally affect the tribological behavior of the counterface.

  13. Magnetization reversal in individual cobalt micro- and nanowires grown by focused-electron-beam-induced-deposition.

    PubMed

    Fernández-Pacheco, A; De Teresa, J M; Szkudlarek, A; Córdoba, R; Ibarra, M R; Petit, D; O'Brien, L; Zeng, H T; Lewis, E R; Read, D E; Cowburn, R P

    2009-11-25

    We systematically study individual micro- and nanometric polycrystalline cobalt wires grown by focused-electron-beam-induced-deposition. The deposits were grown in a range of aspect ratios varying from 1 up to 26. The minimum lateral dimension of the nanowires was 150 nm, for a thickness of 40 nm. Atomic force microscopy images show beam-current-dependent profiles, associated with different regimes of deposition. The magnetization reversal of individual nanowires is studied by means of the spatially resolved magneto-optical Kerr effect. Abrupt switching is observed, with a systematic dependence on the wire's dimensions. This dependence of the coercive field is understood in magnetostatic terms, and agrees well with previous results on cobalt wires grown with different techniques. The influence of compositional gradients along the structural profile on the magnetic reversal is studied by using micromagnetic simulations. This work demonstrates the feasibility of using this technique to fabricate highly pure magnetic nanostructures, and highlights the advantages and disadvantages of the technique with respect to more conventional ones.

  14. Growth and characterization of GaAs layers on Si substrates by migration-enhanced molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Kim, Jae-Hoon; Liu, John K.; Radhakrishnan, Gouri; Katz, Joseph; Sakai, Shiro

    1988-01-01

    Migration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layer on Si substrates (GaAs/Si) are reported. The MEMBE growth method is described, and material properties are compared with those of normal two-step MBE-grown or in situ annealed layers. Micrographs of cross-section view transmission electron microscopy and scanning surface electron microscopy of MEMBE-grown GaAs/Si showed dislocation densities of 10 to the 7th/sq cm. AlGaAs/GaAs double heterostructures have been successfully grown on MEMBE GaAs/Si by both metalorganic chemical vapor deposition and liquid phase epitaxy.

  15. Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Bollinger, A. T.; Wu, J.; Božović, I.

    2016-05-01

    The molecular beam epitaxy (MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

  16. Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

    DOE PAGESBeta

    A. T. Bollinger; Wu, J.; Bozovic, I.

    2016-03-15

    In this study, the molecular beam epitaxy(MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

  17. Controlled growth of few-layer hexagonal boron nitride on copper foils using ion beam sputtering deposition.

    PubMed

    Wang, Haolin; Zhang, Xingwang; Meng, Junhua; Yin, Zhigang; Liu, Xin; Zhao, Yajuan; Zhang, Liuqi

    2015-04-01

    Ion beam sputtering deposition (IBSD) is used to synthesize high quality few-layer hexagonal boron nitride (h-BN) on copper foils. Compared to the conventional chemical vapor deposition, the IBSD technique avoids the use of unconventional precursors and is much easier to control, which should be very useful for the large-scale production of h-BN in the future.

  18. Multi-beam pulsed laser deposition: new method of making nanocomposite coatings

    NASA Astrophysics Data System (ADS)

    Darwish, Abdalla M.; Wilson, Simeon; Blackwell, Ashely; Taylor, Keylantra; Sarkisov, Sergey; Patel, Darayas; Mele, Paolo; Koplitz, Brent

    2015-08-01

    Huge number of new photonic devices, including light emitters, chemical sensors, and energy harvesters, etc. can be made of the nanocomposite coatings produced by the new multi-beam pulsed laser deposition (MB-PLD) process. We provide a short review of the conventional single-beam PLD method and explain why it is poorly suitable for making nanocomposite coatings. Then we describe the new MB-PLD process and system, particularly the multiple-beam matrix assisted pulsed laser evaporation (MB-MAPLE) version with laser beam scanning and plume direction control. The latter one is particularly designed to make organic (polymer) - inorganic functionalized nanocomposite coatings. Polymer film serves as a host for inorganic nanoparticles that add a specific functionality to the film. We analyze the properties of such coatings using the examples of poly(methyl methacrylate) (PMMA) films impregnated with the nanoparticles of rare-earth (RE) upconversion phosphors. They demonstrated the preservation of microcrystalline structure and bright upconversion emission in visible region of the phosphor nanoparticles after they were transferred in the polymer matrix during the MB-MAPLE process. The proposed technology has thus proven to serve its purpose: to make functionalized polymer nanocomposite coatings for a various potential applications.

  19. Review of magnetic nanostructures grown by focused electron beam induced deposition (FEBID)

    NASA Astrophysics Data System (ADS)

    De Teresa, J. M.; Fernández-Pacheco, A.; Córdoba, R.; Serrano-Ramón, L.; Sangiao, S.; Ibarra, M. R.

    2016-06-01

    We review the current status of the use of focused electron beam induced deposition (FEBID) for the growth of magnetic nanostructures. This technique relies on the local dissociation of a precursor gas by means of an electron beam. The most promising results have been obtained using the Co2(CO)8 precursor, where the Co content in the grown nanodeposited material can be tailored up to more than 95 at.%. Functional behaviour of these Co nanodeposits has been observed in applications such as arrays of magnetic dots for information storage and catalytic growth, magnetic tips for scanning probe microscopes, nano-Hall sensors for bead detection, nano-actuated magnetomechanical systems and nanowires for domain-wall manipulation. The review also covers interesting results observed in Fe-based and alloyed nanodeposits. Advantages and disadvantages of FEBID for the growth of magnetic nanostructures are discussed in the article as well as possible future directions in this field.

  20. Report on the workshop on Ion Implantation and Ion Beam Assisted Deposition

    NASA Astrophysics Data System (ADS)

    Dearnaley, G.

    1992-03-01

    This workshop was organized by the Corpus Christi Army Depot (CCAD), the major helicopter repair base within AVSCOM. Previous meetings had revealed a strong interest throughout DoD in ion beam technology as a means of extending the service life of military systems by reducing wear, corrosion, fatigue, etc. The workshop opened with an account by Dr. Bruce Sartwell of the successful application of ion implantation to bearings and gears at NRL, and the checkered history of the MANTECH Project at Spire Corporation. Dr. James Hirvonen (AMTL) continued with a summary of successful applications to reduce wear in biomedical components, and he also described the processes of ion beam-assisted deposition (IBAD) for a variety of protective coatings, including diamond-like carbon (DLC).

  1. Nanocrystalline metal/carbon composites produced by supersonic cluster beam deposition.

    PubMed

    Bongiorno, G; Lenardi, C; Ducati, C; Agostino, R G; Caruso, T; Amati, M; Blomqvist, M; Barborini, E; Piseri, P; La Rosa, S; Colavita, E; Milani, P

    2005-07-01

    In this work we show that supersonic cluster beam deposition is a viable method for the synthesis of nanocrystalline metal/carbon composites. By assembling carbon and metallic clusters seeded in a supersonic beam, we have grown films consisting of metal nanoparticles embedded in a nano-structured carbon matrix. Samples containing 3d transition metals (Ti, Ni) and noble metals (Au, Pd, Pt) with different metal abundances, particle size and dilution have been characterized by transmission electron microscopy. The influence of different metals on the structure of the carbon matrix has been investigated. Spatially resolved ultraviolet photoemission electron spectroscopy showed substantial surface oxidation of 3d transition metal clusters. On a micrometric scale, the spatial distribution of the metallic nanoparticles appeared to be homogeneous.

  2. Ion beam assisted deposition of organic molecules: a physical way to realize OLED structures

    NASA Astrophysics Data System (ADS)

    Moliton, André; Antony, Rémi; Troadec, David; Ratier, Bernard

    2000-05-01

    We demonstrate how the quantum efficiency of an organic light-emitting diode can be improved by a physical way based on the ion beam assisted deposition: the recombination current can be increased by an enhancement of the minority carrier injection while the total current can be decreased by generation of electron traps which reduced the majority current. The quantum efficiency of fluorescence can be also improved by a layer densification with a limitation of the nonradiative centers. As a result, the quantum efficiency of the structure ITO/Helium assisted Alq3/unassisted Alq3/Ca/Al is improved (by around a factor 10) in relation with a virgin structure.

  3. Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition

    SciTech Connect

    Wang, Yuhan; Comes, Ryan B.; Kittiwatanakul, Salinporn; Wolf, Stuart A.; Lu, Jiwei

    2015-03-01

    Epitaxial NbO2 thin films were synthesized on Al2O3 (0001) substrates via reactive bias target ion beam deposition. X-ray diffraction and Raman spectra were used to confirm the tetragonal phase of pure NbO2. Through XPS, it was found that there was a ~ 1.3 nm thick Nb2O5 layer on the surface and the bulk of the thin film was NbO2. The epitaxial relationship between NbO2 film and substrate was determined. Electrical transport measurement as a function of temperature showed that the conduction mechanism could be described by variable range hopping mechanism.

  4. Direct evidence of strongly inhomogeneous energy deposition in target heating with laser-produced ion beams.

    PubMed

    Brambrink, E; Schlegel, T; Malka, G; Amthor, K U; Aléonard, M M; Claverie, G; Gerbaux, M; Gobet, F; Hannachi, F; Méot, V; Morel, P; Nicolai, P; Scheurer, J N; Tarisien, M; Tikhonchuk, V; Audebert, P

    2007-06-01

    We report on strong nonuniformities in target heating with intense, laser-produced proton beams. The observed inhomogeneity in energy deposition can strongly perturb equation of state (EOS) measurements with laser-accelerated ions which are planned in several laboratories. Interferometric measurements of the target expansion show different expansion velocities on the front and rear surfaces, indicating a strong difference in local temperature. The nonuniformity indicates at an additional heating mechanism, which seems to originate from electrons in the keV range. PMID:17677318

  5. Nanomanufacturing of titania interfaces with controlled structural and functional properties by supersonic cluster beam deposition

    NASA Astrophysics Data System (ADS)

    Podestà, Alessandro; Borghi, Francesca; Indrieri, Marco; Bovio, Simone; Piazzoni, Claudio; Milani, Paolo

    2015-12-01

    Great emphasis is placed on the development of integrated approaches for the synthesis and the characterization of ad hoc nanostructured platforms, to be used as templates with controlled morphology and chemical properties for the investigation of specific phenomena of great relevance in interdisciplinary fields such as biotechnology, medicine, and advanced materials. Here, we discuss the crucial role and the advantages of thin film deposition strategies based on cluster-assembling from supersonic cluster beams. We select cluster-assembled nanostructured titania (ns-TiO2) as a case study to demonstrate that accurate control over morphological parameters can be routinely achieved, and consequently, over several relevant interfacial properties and phenomena, like surface charging in a liquid electrolyte, and proteins and nanoparticles adsorption. In particular, we show that the very good control of nanoscale morphology is obtained by taking advantage of simple scaling laws governing the ballistic deposition regime of low-energy, mass-dispersed clusters with reduced surface mobility.

  6. Study And Comparison Of Silver Mirrors Deposited On Different Substrates By Electron-Beam Gun Method

    SciTech Connect

    Asl, Jahanbakhsh Mashaiekhy; Shafieizadeh, Zahra; Sabbaghzadeh, Jamshid; Anaraki, Mahdi

    2010-12-23

    Choosing the right substrate is one of the important factors for improving quality parameters of thin films such as adhesion between layers and substrates. The selected substrate should have proper physical and chemical compatibility with deposited thin film. In this paper, we have been investigated four different types of high reflective laser mirrors that were produced in similar conditions on four different kinds of substrates including copper, stainless steel, brass, and nickel. We used electron-beam gun method for deposition of silver layers. At the end we compared theoretical results with practical results that were yielded by laser damage threshold test. It was shown that brass is the best choice for silver metal mirrors as a substrate.

  7. Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

    NASA Astrophysics Data System (ADS)

    Krumov, E.; Starbov, N.; Starbova, K.; Perea, A.; Solis, J.

    2009-11-01

    Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO 2 ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO 2 films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO 2 based thin film catalysts is discussed.

  8. Fundamental tribological properties of ion-beam-deposited boron nitride films

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1989-01-01

    The adhesion, friction, and micromechanical properties of ion-beam-deposited boron nitride (BN) films are reviewed. The BN films are examined in contact with BN metals and other harder materials. For simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. First, the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces are discussed. The effects of surface films, hardness of metals, and temperature on tribological response with respect to adhesion and friction are considered. The second part deals with the abrasion of the BN films. Elastic, plastic, and fracture behavior of the BN films in solid-state contact are discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of BN films deposited on substrates is also addressed.

  9. Nanomanufacturing of titania interfaces with controlled structural and functional properties by supersonic cluster beam deposition

    SciTech Connect

    Podestà, Alessandro E-mail: pmilani@mi.infn.it; Borghi, Francesca; Indrieri, Marco; Bovio, Simone; Piazzoni, Claudio; Milani, Paolo E-mail: pmilani@mi.infn.it

    2015-12-21

    Great emphasis is placed on the development of integrated approaches for the synthesis and the characterization of ad hoc nanostructured platforms, to be used as templates with controlled morphology and chemical properties for the investigation of specific phenomena of great relevance in interdisciplinary fields such as biotechnology, medicine, and advanced materials. Here, we discuss the crucial role and the advantages of thin film deposition strategies based on cluster-assembling from supersonic cluster beams. We select cluster-assembled nanostructured titania (ns-TiO{sub 2}) as a case study to demonstrate that accurate control over morphological parameters can be routinely achieved, and consequently, over several relevant interfacial properties and phenomena, like surface charging in a liquid electrolyte, and proteins and nanoparticles adsorption. In particular, we show that the very good control of nanoscale morphology is obtained by taking advantage of simple scaling laws governing the ballistic deposition regime of low-energy, mass-dispersed clusters with reduced surface mobility.

  10. Fundamental tribological properties of ion-beam-deposited boron nitride films

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.

    1990-01-01

    The adhesion, friction, and micromechanical properties of ion-beam-deposited boron nitride (BN) films are reviewed. The BN films are examined in contact with BN metals and other harder materials. For simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. First, the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces are discussed. The effects of surface films, hardness of metals, and temperature on tribological response with respect to adhesion and friction are considered. The second part deals with the abrasion of the BN films. Elastic, plastic, and fracture behavior of the BN films in solid-state contact are discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of BN films deposited on substrates is also addressed.

  11. Measurement of the density profile of pure and seeded molecular beams by femtosecond ion imaging

    SciTech Connect

    Meng, Congsen; Janssen, Maurice H. M.

    2015-02-15

    Here, we report on femtosecond ion imaging experiments to measure the density profile of a pulsed supersonic molecular beam. Ion images are measured for both a molecular beam and bulk gas under identical experimental conditions via femtosecond multiphoton ionization of Xe atoms. We report the density profile of the molecular beam, and the measured absolute density is compared with theoretical calculations of the centre line beam density. Subsequently, we discuss reasons accounting for the differences between measurements and calculations and propose that strong skimmer interference is the most probable cause for the differences. Furthermore, we report on experiments measuring the centre line density of seeded supersonic beams. The femtosecond ion images show that seeding the heavy Xe atom at low relative seed fractions (1%-10%) in a light carrier gas like Ne results in strong relative enhancements of up to two orders of magnitude.

  12. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices.

    PubMed

    Batra, Nitin M; Patole, Shashikant P; Abdelkader, Ahmed; Anjum, Dalaver H; Deepak, Francis L; Costa, Pedro M F J

    2015-11-01

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode-interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode-nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  13. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices

    NASA Astrophysics Data System (ADS)

    Batra, Nitin M.; Patole, Shashikant P.; Abdelkader, Ahmed; Anjum, Dalaver H.; Deepak, Francis L.; Costa, Pedro M. F. J.

    2015-11-01

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode-interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode-nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  14. Internal Energy Dependence of Molecular Condensation Coefficients Determined from Molecular Beam Surface Scattering Experiments

    DOE R&D Accomplishments Database

    Sibener, S. J.; Lee, Y. T.

    1978-05-01

    An experiment was performed which confirms the existence of an internal mode dependence of molecular sticking probabilities for collisions of molecules with a cold surface. The scattering of a velocity selected effusive beam of CCl{sub 4} from a 90 K CC1{sub 4} ice surface has been studied at five translational velocities and for two different internal temperatures. At a surface temperature of 90 K (approx. 99% sticking probability) a four fold increase in reflected intensity was observed for the internally excited (560 K) CC1{sub 4} relative to the room temperature (298 K) CC1{sub 4} at a translational velocity of 2.5 X 10{sup 4} cm/sec. For a surface temperature of 90 K all angular distributions were found to peak 15{sup 0} superspecularly independent of incident velocity.

  15. Vapor deposition of a smectic liquid crystal: highly anisotropic, homogeneous glasses with tunable molecular orientation.

    PubMed

    Gómez, Jaritza; Jiang, Jing; Gujral, Ankit; Huang, Chengbin; Yu, Lian; Ediger, M D

    2016-03-21

    Physical vapor deposition (PVD) has been used to prepare glasses of itraconazole, a smectic A liquid crystal. Glasses were deposited onto subtrates at a range of temperatures (Tsubstrate) near the glass transition temperature (Tg), with Tsubstrate/Tg ranging from 0.70 to 1.02. Infrared spectroscopy and spectroscopic ellipsometry were used to characterize the molecular orientation using the orientational order parameter, Sz, and the birefringence. We find that the molecules in glasses deposited at Tsubstrate = Tg are nearly perpendicular to the substrate (Sz = +0.66) while at lower Tsubstrate molecules are nearly parallel to the substrate (Sz = -0.45). The molecular orientation depends on the temperature of the substrate during preparation, allowing layered samples with differing orientations to be readily prepared. In addition, these vapor-deposited glasses are macroscopically homogeneous and molecularly flat. We interpret the combination of properties obtained for vapor-deposited glasses of itraconazole to result from a process where molecular orientation is determined by the structure and dynamics at the free surface of the glass during deposition. Vapor deposition of liquid crystals is likely a general approach for the preparation of highly anisotropic glasses with tunable molecular orientation for use in organic electronics and optoelectronics.

  16. Fabrication of precision high quality facets on molecular beam epitaxy material

    DOEpatents

    Petersen, Holly E.; Goward, William D.; Dijaili, Sol P.

    2001-01-01

    Fabricating mirrored vertical surfaces on semiconductor layered material grown by molecular beam epitaxy (MBE). Low energy chemically assisted ion beam etching (CAIBE) is employed to prepare mirrored vertical surfaces on MBE-grown III-V materials under unusually low concentrations of oxygen in evacuated etching atmospheres of chlorine and xenon ion beams. UV-stabilized smooth-surfaced photoresist materials contribute to highly vertical, high quality mirrored surfaces during the etching.

  17. Synthesis of nanowires via helium and neon focused ion beam induced deposition with the gas field ion microscope.

    PubMed

    Wu, H M; Stern, L A; Chen, J H; Huth, M; Schwalb, C H; Winhold, M; Porrati, F; Gonzalez, C M; Timilsina, R; Rack, P D

    2013-05-01

    The ion beam induced nanoscale synthesis of platinum nanowires using the trimethyl (methylcyclopentadienyl)platinum(IV) (MeCpPt(IV)Me3) precursor is investigated using helium and neon ion beams in the gas field ion microscope. The He(+) beam induced deposition resembles material deposited by electron beam induced deposition with very small platinum nanocrystallites suspended in a carbonaceous matrix. The He(+) deposited material composition was estimated to be 16% Pt in a matrix of amorphous carbon with a large room-temperature resistivity (∼3.5 × 10(4)-2.2 × 10(5) μΩ cm) and temperature-dependent transport behavior consistent with a granular material in the weak intergrain tunnel coupling regime. The Ne(+) deposited material has comparable composition (17%), however a much lower room-temperature resistivity (∼600-3.0 × 10(3) μΩ cm) and temperature-dependent electrical behavior representative of strong intergrain coupling. The Ne(+) deposited nanostructure has larger platinum nanoparticles and is rationalized via Monte Carlo ion-solid simulations which show that the neon energy density deposited during growth is much larger due to the smaller ion range and is dominated by nuclear stopping relative to helium which has a larger range and is dominated by electronic stopping.

  18. Energy deposition issues at 8 GeV H- beam collimation and injection to the Fermilab Main Injector

    SciTech Connect

    Drozhdin, A.I.; Kostin, M.A.; Mokhov, N.V.; /Fermilab

    2005-05-01

    The energy deposition and radiation issues at 8 GeV h{sup -} beam collimation in the beam transfer line and at stripping injection to the Fermilab Main Injector (MI) are analyzed. Detailed calculations with the STRUCT [1] and MARS15 [2] codes are performed on heating of collimators and stripping foils, as well as on accelerator elements radioactivation at normal operation. Extraction of the unstripped part of the beam to the external beam dump and loss of the excited-state H{sup 0} atoms in MI are also studied.

  19. Direct-write deposition and focused-electron-beam-induced purification of gold nanostructures.

    PubMed

    Belić, Domagoj; Shawrav, Mostafa M; Gavagnin, Marco; Stöger-Pollach, Michael; Wanzenboeck, Heinz D; Bertagnolli, Emmerich

    2015-02-01

    Three-dimensional gold (Au) nanostructures offer promise in nanoplasmonics, biomedical applications, electrochemical sensing and as contacts for carbon-based electronics. Direct-write techniques such as focused-electron-beam-induced deposition (FEBID) can provide such precisely patterned nanostructures. Unfortunately, FEBID Au traditionally suffers from a high nonmetallic content and cannot meet the purity requirements for these applications. Here we report exceptionally pure pristine FEBID Au nanostructures comprising submicrometer-large monocrystalline Au sections. On the basis of high-resolution transmission electron microscopy results and Monte Carlo simulations of electron trajectories in the deposited nanostructures, we propose a curing mechanism that elucidates the observed phenomena. The in situ focused-electron-beam-induced curing mechanism was supported by postdeposition ex situ curing and, in combination with oxygen plasma cleaning, is utilized as a straightforward purification method for planar FEBID structures. This work paves the way for the application of FEBID Au nanostructures in a new generation of biosensors and plasmonic nanodevices.

  20. Simulation-Guided 3D Nanomanufacturing via Focused Electron Beam Induced Deposition

    DOE PAGESBeta

    Fowlkes, Jason D.; Winkler, Robert; Lewis, Brett B.; Stanford, Michael G.; Plank, Harald; Rack, Philip D.

    2016-06-10

    Focused electron beam induced deposition (FEBID) is one of the few techniques that enables direct-write synthesis of free-standing 3D nanostructures. While the fabrication of simple architectures such as vertical or curving nanowires has been achieved by simple trial and error, processing complex 3D structures is not tractable with this approach. This is due, inpart, to the dynamic interplay between electron–solid interactions and the transient spatial distribution of absorbed precursor molecules on the solid surface. Here, we demonstrate the ability to controllably deposit 3D lattice structures at the micro/nanoscale, which have received recent interest owing to superior mechanical and optical properties.more » Moreover, a hybrid Monte Carlo–continuum simulation is briefly overviewed, and subsequently FEBID experiments and simulations are directly compared. Finally, a 3D computer-aided design (CAD) program is introduced, which generates the beam parameters necessary for FEBID by both simulation and experiment. In using this approach, we demonstrate the fabrication of various 3D lattice structures using Pt-, Au-, and W-based precursors.« less

  1. Biaxial Texture Evolution in MgO Films Fabricated Using Ion Beam-Assisted Deposition

    NASA Astrophysics Data System (ADS)

    Xue, Yan; Zhang, Ya-Hui; Zhao, Rui-Peng; Zhang, Fei; Lu, Yu-Ming; Cai, Chuan-Bing; Xiong, Jie; Tao, Bo-Wan

    2016-07-01

    The growth of multifunctional thin films on flexible substrates is important technologically, because flexible electronics require such a platform. In this study, we examined the evolution of biaxial texture in MgO films prepared using ion beam-assisted deposition (IBAD) on a Hastelloy substrate. Texture and microstructure developments were characterized through in situ reflection high-energy electron diffraction monitoring, x-ray diffraction, and atomic force microscopy, which demonstrated that biaxial texture was developed during the nucleation stage (~2.2 nm). The best biaxial texture was obtained with a thickness of approximately 12 nm. As MgO continued to grow, the influence of surface energy was reduced, and film growth was driven by the attempt to minimize volume free-energy density. Thus the MgO grains were subsequently rotated at the (002) direction toward the ion beam. In addition, an approach was developed for accelerating in-plane texture evolution by pre-depositing an amorphous MgO layer before IBAD.

  2. Crossed molecular beam studies of atmospheric chemical reaction dynamics

    SciTech Connect

    Zhang, Jingsong

    1993-04-01

    The dynamics of several elementary chemical reactions that are important in atmospheric chemistry are investigated. The reactive scattering of ground state chlorine or bromine atoms with ozone molecules and ground state chlorine atoms with nitrogen dioxide molecules is studied using a crossed molecular beams apparatus with a rotatable mass spectrometer detector. The Cl + O{sub 3} {yields} ClO + O{sub 2} reaction has been studied at four collision energies ranging from 6 kcal/mole to 32 kcal/mole. The derived product center-of-mass angular and translational energy distributions show that the reaction has a direct reaction mechanism and that there is a strong repulsion on the exit channel. The ClO product is sideways and forward scattered with respect to the Cl atom, and the translational energy release is large. The Cl atom is most likely to attack the terminal oxygen atom of the ozone molecule. The Br + O{sub 3} {yields} ClO + O{sub 2} reaction has been studied at five collision energies ranging from 5 kcal/mole to 26 kcal/mole. The derived product center-of-mass angular and translational energy distributions are quite similar to those in the Cl + O{sub 3} reaction. The Br + O{sub 3} reaction has a direct reaction mechanism similar to that of the Cl + O{sub 3} reaction. The electronic structure of the ozone molecule seems to play the central role in determining the reaction mechanism in atomic radical reactions with the ozone molecule. The Cl + NO{sub 2} {yields} ClO + NO reaction has been studied at three collision energies ranging from 10.6 kcal/mole to 22.4 kcal/mole. The center-of-mass angular distribution has some forward-backward symmetry, and the product translational energy release is quite large. The reaction proceeds through a short-lived complex whose lifetime is less than one rotational period. The experimental results seem to show that the Cl atom mainly attacks the oxygen atom instead of the nitrogen atom of the NO{sub 2} molecule.

  3. Molecular Beam Epitaxial Growth of Cuprate Superconductors and Related Phases

    NASA Astrophysics Data System (ADS)

    Schlom, Darrell Galen

    The discovery of a class of new layered crystalline materials which exhibit superconductivity at unprecedented temperatures has opened new possibilities for the future of electronic devices and for molecular beam epitaxy (MBE) as a potential method to grow device structures containing these materials. The low growth temperature and atomic layering capability that MBE has demonstrated for the growth of semiconductors suggests that the MBE growth of non-equilibrium layered structures and metastable phases within oxide systems encompassing the high transition temperature (T _{rm c}) superconductors might be possible. If available, such a growth technique would be useful not only for device fabrication, but would offer an unparalleled technique to fabricate metastable superlattice mixtures to test high T_{ rm c} theories, which might then allow the growth of even higher temperature superconducting compounds. In contrast to the simplicity of the materials systems to which MBE has been successfully applied, the growth of fully oxidized, multi-element compounds by MBE involves significant challenges. This thesis describes research to develop in situ growth techniques allowing the growth of layered superconducting cuprates and related phases by MBE, and characterization of grown films. The conditions necessary to achieve this in situ ability, including the use of highly oxidizing species in order to maintain a long mean free path necessary for MBE, appropriate substrate temperature, precise composition control, and suitable substrates are discussed. The MBE apparatus used and design improvements made during the course of this research are described. The experimental results of films grown in the Dy-Ba-Cu-O and Bi-Sr-Ca-Cu-O systems demonstrate the ability of this shuttered, layer-by-layer MBE technique to grow smooth, layered, metastable compounds, including ordered superlattices, in situ using ozone. Both cross -sectional TEM images and a comparison of the observed x -ray

  4. Molecular beam facility for studying mass spectrometer performance

    NASA Technical Reports Server (NTRS)

    Ballenthin, J. O.; Nier, A. O.

    1981-01-01

    An apparatus which produces neutral gas beams in the velocity range from thermal to 6 km/s makes possible studies simulating the motion of instruments through tenuous atmospheres. Use of the apparatus in studying the response of an open-source mass spectrometer is examined. Experiments performed include responses when the instrument is in a normal mode of operation, when the ion source potentials are adjusted to reject striking gas particles, when the beam is restricted so that portions of the ion source are struck, and when the beam strikes at angles other than normal incidence. Results indicate specular radiation of particles out of the source and stagnation ratios close to unity for normal operation. Retarding potential studies dropped the sensitivity by a factor of about 10, and as angles of attack are varied, the effect was found to depend upon beam velocity and the way the ions are initially accelerated.

  5. Formation of Diamond-like Carbon Thin Films by Ion Beam Assisted Deposition Method

    NASA Astrophysics Data System (ADS)

    Nakamura, Isao; Takano, Ichiro; Sasaki, Michiko; Takashika, Masaru; Kasiwagi, Tomohumi; Sawada, Yohio

    The mechanical properties of diamond-like carbon (DLC) thin films on SUS304 substrate have been studied. DLC thin films were prepared by the ion beam assisted deposition method. In this method, He+ ion irradiation was carried out in a C2H4 gas atmosphere. He+ ions were accelerated at an energy of 15 keV, and the ion beam current densities were changed from 10 to 100 μA/cm2. Atomic concentration and structure of the films were investigated by X-ray photoelectron spectroscopy and Raman spectroscopy. The mechanical properties of hardness and friction coefficient were determined using the Knoop hardness tester and the pin-on-disk tribometer. The DLC thin films had amorphous structure that composed chiefly of graphite and disorder of graphite states. The Knoop hardness of the films increased with increasing He+ ion current density, and the film prepared at a current density of 80 μA/cm2 showed the maximum Knoop hardness value of 890 kgf/cm2. The friction coefficient of the film prepared at a current density of 60 μA/cm2 indicated lower value than that of the other current densities. From these results, it was cleared that the mechanical properties and structure of DLC thin films were greatly affected by the He+ ion beam current density.

  6. Investigations of high mobility single crystal chemical vapor deposition diamond for radiotherapy photon beam monitoring

    NASA Astrophysics Data System (ADS)

    Tromson, D.; Descamps, C.; Tranchant, N.; Bergonzo, P.; Nesladek, M.; Isambert, A.

    2008-03-01

    The intrinsic properties of diamond make this material theoretically very suitable for applications in medical physics. Until now ionization chambers have been fabricated from natural stones and are commercialized by PTW, but their fairly high costs and long delivery times have often limited their use in hospital. The properties of commercialized intrinsic polycrystalline diamond were investigated in the past by many groups. The results were not completely satisfactory due to the nature of the polycrystalline material itself. In contrast, the recent progresses in the growth of high mobility single crystal synthetic diamonds prepared by chemical vapor deposition (CVD) technique offer new alternatives. In the framework of the MAESTRO project (Methods and Advanced Treatments and Simulations for Radio Oncology), the CEA-LIST is studying the potentialities of synthetic diamond for new techniques of irradiation such as intensity modulated radiation therapy. In this paper, we present the growth and characteristics of single crystal diamond prepared at CEA-LIST in the framework of the NoRHDia project (Novel Radiation Hard CVD Diamond Detector for Hadrons Physics), as well as the investigations of high mobility single crystal CVD diamond for radiotherapy photon beam monitoring: dosimetric analysis performed with the single crystal diamond detector in terms of stability and repeatability of the response signal, signal to noise ratio, response speed, linearity of the signal versus the absorbed dose, and dose rate. The measurements performed with photon beams using radiotherapy facilities demonstrate that single crystal CVD diamond is a good alternative for air ionization chambers for beam quality control.

  7. Ion and electron beam processing of condensed molecular solids to form thin films

    SciTech Connect

    Ruckman, M.W.; Strongin, M.; Mowlem, J.K.; Moore, J.F.; Strongin, D.R.

    1992-12-31

    Electron and ion beams can be used to deposit thin films and etch surfaces using gas phase precursors. However, the generation of undesirable gas phase products and the diffusion of the reactive species beyond the region irradiated by the electron or ion beam can limit selectivity. In this paper, the feasibility of processing condensed precursors such as diborane, tri-methyl aluminum, ammonia and water at 78 K with low energy ( 100--1000 eV) electron and ion beams (Ar{sup +}, N{sub 2}{sup +} and H{sub 2}{sup +}) ranging in current density from 50 nA to several {mu}a per cm{sup 2} is examined. It was found that boron, boron nitride and stoichiometric aluminum oxide films could be deposited from the condensed volatile; species using charged particle beams and some of the physical and chemical aspects and limitations of this new technique are discussed.

  8. Microstructure and surface morphology of YSZ thin films deposited by e-beam technique

    NASA Astrophysics Data System (ADS)

    Laukaitis, G.; Dudonis, J.; Milčius, D.

    2008-03-01

    In present study yttrium-stabilized zirconia (YSZ) thin films were deposited on optical quartz (amorphous SiO 2), porous Ni-YSZ and crystalline Alloy 600 (Fe-Ni-Cr) substrates using e-beam deposition technique and controlling technological parameters: substrate temperature and electron gun power which influence thin-film deposition mechanism. X-ray diffraction, scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to investigate how thin-film structure and surface morphology depend on these parameters. It was found that the crystallite size, roughness and growth mechanism of YSZ thin films are influenced by electron gun power. To clarify the experimental results, YSZ thin-film formation as well evolution of surface roughness at its initial growing stages were analyzed. The evolution of surface roughness could be explained by the processes of surface mobility of adatoms and coalescence of islands. The analysis of these experimental results explain that surface roughness dependence on substrate temperature and electron gun power non-monotonous which could result from diffusivity of adatoms and the amount of atomic clusters in the gas stream of evaporated material.

  9. Electron beam physical vapor deposition of thin ruby films for remote temperature sensing

    NASA Astrophysics Data System (ADS)

    Li, Wei; Coppens, Zachary J.; Greg Walker, D.; Valentine, Jason G.

    2013-04-01

    Thermographic phosphors (TGPs) possessing temperature-dependent photoluminescence properties have a wide range of uses in thermometry due to their remote access and large temperature sensitivity range. However, in most cases, phosphors are synthesized in powder form, which prevents their use in high resolution micro and nanoscale thermal microscopy. In the present study, we investigate the use of electron beam physical vapor deposition to fabricate thin films of chromium-doped aluminum oxide (Cr-Al2O3, ruby) thermographic phosphors. Although as-deposited films were amorphous and exhibited weak photoluminescence, the films regained the stoichiometry and α-Al2O3 crystal structure of the combustion synthesized source powder after thermal annealing. As a consequence, the annealed films exhibit both strong photoluminescence and a temperature-dependent lifetime that decreases from 2.9 ms at 298 K to 2.1 ms at 370 K. Ruby films were also deposited on multiple substrates. To ensure a continuous film with smooth surface morphology and strong photoluminescence, we use a sapphire substrate, which is thermal expansion coefficient and lattice matched to the film. These thin ruby films can potentially be used as remote temperature sensors for probing the local temperatures of micro and nanoscale structures.

  10. Low energy cluster beam deposited BN films as the cascade for field emission

    NASA Astrophysics Data System (ADS)

    Song, F.; Zhang, L.; Zhu, L.; Ge, J.; Wang, G.

    2005-07-01

    The atomic deposited BN films with the thickness of nanometers (ABN) were prepared by radio frequency magnetron sputtering method and the nanostructured BN films (CBN) were prepared by Low Energy Cluster Beam Deposition. UV-Vis Absorption measurement proves the band gap of 4.27 eV and field emission of the BN films were carried out. F-N plots of all the samples give a good fitting and demonstrate the F-N tunneling of the emission process. The emission of ABN begins at the electric field of 14.6 V/μ m while that of CBN starts at 5.10 V/μ m. Emission current density of 1 mA/cm2 for ABN needs the field of 20 V/μ m while that of CBN needs only 12.1 V/μ m. The cluster-deposited BN on n-type Silicon substrate proves a good performance in terms of the lower gauge voltage, more emission sites and higher electron intensity and seems a promising substitute for the cascade of field emission.

  11. Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Hirama, Kazuyuki; Taniyasu, Yoshitaka; Karimoto, Shin-ichi; Krockenberger, Yoshiharu; Yamamoto, Hideki

    2014-03-01

    We investigated the formation of cubic boron nitride (c-BN) thin films on diamond (001) and (111) substrates by ion-beam-assisted molecular beam epitaxy (MBE). The metastable c-BN (sp3-bonded BN) phase can be epitaxially grown as a result of the interplay between competitive phase formation and selective etching. We show that a proper adjustment of acceleration voltage for N2+ and Ar+ ions is a key to selectively discriminate non-sp3 BN phases. At low acceleration voltage values, the sp2-bonded BN is dominantly formed, while at high acceleration voltages, etching dominates irrespective of the bonding characteristics of BN.

  12. REFLEX: An energy deposition code that models the effects of electron reflection during electron beam heating tests

    SciTech Connect

    Stone, C.A. IV; Croessmann, C.D.; Whitley, J.B.

    1988-01-01

    This report describes an energy coupling model that considers electron reflection losses during electron beam heating experiments. This model is embodied on the REFLEX computer code, written in standard FORTRAN 77. REFLEX currently models energy deposition phenomena in three different sample geometries. These configurations include flat, cylindrical shell, and hemispherical shell surfaces. Given the electron beam operating parameters, REFLEX calculates the heat flux profile over a sample's surface, the total amount of energy deposited into a sample, and the percentage of the electron beam energy that is transferred to a sample. This document describes the energy deposition equations used in the REFLEX code; the program is described and detailed instructions are given regarding the input. Results are given for each geometry and possible experimental applications are presented. 3 refs., 20 figs., 11 tabs.

  13. REFLEX: An energy deposition code that models the effects of electron reflection during electron beam heating tests

    NASA Astrophysics Data System (ADS)

    Stone, C. A., IV; Croessmann, C. D.; Whitley, J. B.

    1988-01-01

    This report describes an energy coupling model that considers electron reflection losses during electron beam heating experiments. This model is embodied on the REFLEX computer code, written in standard FORTRAN 77. REFLEX currently models energy deposition phenomena in three different sample geometries. These configurations include flat, cylindrical shell, and hemispherical shell surfaces. Given the electron beam operating parameters, REFLEX calculates the heat flux profile over a sample's surface, the total amount of energy deposited into a sample, and the percentage of the electron beam energy that is transferred to a sample. This document describes the energy deposition equations used in the REFLEX code; the program is described and detailed instructions are given regarding the input. Results are given for each geometry and possible experimental applications are presented.

  14. Superconductivity in oxygen doped iron telluride by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Zheng, Mao

    Iron base superconductor have gained much attention in the research community. They offer great potentials to improve our understanding of the subject of superconductivity by having another family of high temperature superconductors to compare and contrast to the cuprates. Practically, the iron based superconductors seems to be even better candidates for applications in power generation and power transmission. Iron telluride is regarded as the parent compound of the "11" family, the family of iron chalcogenide that has the simplest structure. Iron telluride itself is not a superconductor, by can become one when doped with oxygen. In this investigation, we developed the growth recipe of thin film iron telluride by Molecular Beam Epitaxy (MBE). We found the growth to be self-regulated, similar to that of GaAs. The initial layers of growth seem to experience a spontaneous crystallization, as the film quickly go from the initial polycrystalline phase to highly crystalline in just a few unit cells. We studied oxygen doping to the iron telluride thin films and the resultant superconductivity. We characterized the sample with AFM, XRD, transport, and STEM-EELS, and we found that interfacial strain is not an essential ingredient of superconductivity in this particular case. We investigated the doping conditions for two candidate oxygen doping modes: substitution and interstitial. We found that substitution occurs when the film grown in oxygen, while interstitial oxygen is primarily incorporated during annealing after growth. The substitutional oxygen are concentrated in small local regions where substitution is around 100%, but does not contribute to superconductivity. We estimated substitutional oxygen to be about 5%, and is the proximate cause of superconductivity. Hall experiment on our sample showed a shift of dominant carrier type from holes to electrons around 35 K, but the transition was set in motion as early as the structural phase transition around 70 K. We

  15. High aspect ratio AFM Probe processing by helium-ion-beam induced deposition.

    PubMed

    Onishi, Keiko; Guo, Hongxuan; Nagano, Syoko; Fujita, Daisuke

    2014-11-01

    A Scanning Helium Ion Microscope (SHIM) is a high resolution surface observation instrument similar to a Scanning Electron Microscope (SEM) since both instruments employ finely focused particle beams of ions or electrons [1]. The apparent difference is that SHIMs can be used not only for a sub-nanometer scale resolution microscopic research, but also for the applications of very fine fabrication and direct lithography of surfaces at the nanoscale dimensions. On the other hand, atomic force microscope (AFM) is another type of high resolution microscopy which can measure a three-dimensional surface morphology by tracing a fine probe with a sharp tip apex on a specimen's surface.In order to measure highly uneven and concavo-convex surfaces by AFM, the probe of a high aspect ratio with a sharp tip is much more necessary than the probe of a general quadrangular pyramid shape. In this paper we report the manufacture of the probe tip of the high aspect ratio by ion-beam induced gas deposition using a nanoscale helium ion beam of SHIM.Gas of platinum organic compound was injected into the sample surface neighborhood in the vacuum chamber of SHIM. The decomposition of the gas and the precipitation of the involved metal brought up a platinum nano-object in a pillar shape on the normal commercial AFM probe tip. A SHIM system (Carl Zeiss, Orion Plus) equipped with the gas injection system (OmniProbe, OmniGIS) was used for the research. While the vacuum being kept to work, we injected platinum organic compound ((CH3)3(CH3C5H4)Pt) into the sample neighborhood and irradiated the helium ion beam with the shape of a point on the apex of the AFM probe tip. It is found that we can control the length of the Pt nano-pillar by irradiation time of the helium ion beam. The AFM probe which brought up a Pt nano-pillar is shown in Figure 1. It is revealed that a high-aspect-ratio Pt nano-pillar of ∼40nm diameter and up to ∼2000 nm length can be grown. In addition, for possible heating

  16. Comparisons between tokamak fueling of gas puffing and supersonic molecular beam injection in 2D simulations

    SciTech Connect

    Zhou, Y. L.; Wang, Z. H.; Xu, X. Q.; Li, H. D.; Feng, H.; Sun, W. G.

    2015-01-15

    Plasma fueling with high efficiency and deep injection is very important to enable fusion power performance requirements. It is a powerful and efficient way to study neutral transport dynamics and find methods of improving the fueling performance by doing large scale simulations. Two basic fueling methods, gas puffing (GP) and supersonic molecular beam injection (SMBI), are simulated and compared in realistic divertor geometry of the HL-2A tokamak with a newly developed module, named trans-neut, within the framework of BOUT++ boundary plasma turbulence code [Z. H. Wang et al., Nucl. Fusion 54, 043019 (2014)]. The physical model includes plasma density, heat and momentum transport equations along with neutral density, and momentum transport equations. Transport dynamics and profile evolutions of both plasma and neutrals are simulated and compared between GP and SMBI in both poloidal and radial directions, which are quite different from one and the other. It finds that the neutrals can penetrate about four centimeters inside the last closed (magnetic) flux surface during SMBI, while they are all deposited outside of the LCF during GP. It is the radial convection and larger inflowing flux which lead to the deeper penetration depth of SMBI and higher fueling efficiency compared to GP.

  17. Comparisons between tokamak fueling of gas puffing and supersonic molecular beam injection in 2D simulations

    SciTech Connect

    Zhou, Y. L.; Wang, Z. H.; Xu, X. Q.; Li, H. D.; Feng, H.; Sun, W. G.

    2015-01-09

    Plasma fueling with high efficiency and deep injection is very important to enable fusion power performance requirements. It is a powerful and efficient way to study neutral transport dynamics and find methods of improving the fueling performance by doing large scale simulations. Furthermore, two basic fueling methods, gas puffing (GP) and supersonic molecular beam injection (SMBI), are simulated and compared in realistic divertor geometry of the HL-2A tokamak with a newly developed module, named trans-neut, within the framework of BOUT++ boundary plasma turbulence code [Z. H. Wang et al., Nucl. Fusion 54, 043019 (2014)]. The physical model includes plasma density, heat and momentum transport equations along with neutral density, and momentum transport equations. In transport dynamics and profile evolutions of both plasma and neutrals are simulated and compared between GP and SMBI in both poloidal and radial directions, which are quite different from one and the other. It finds that the neutrals can penetrate about four centimeters inside the last closed (magnetic) flux surface during SMBI, while they are all deposited outside of the LCF during GP. Moreover, it is the radial convection and larger inflowing flux which lead to the deeper penetration depth of SMBI and higher fueling efficiency compared to GP.

  18. Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Brahlek, Matthew; Zhang, Lei; Zhang, Hai-Tian; Lapano, Jason; Dedon, Liv R.; Martin, Lane W.; Engel-Herbert, Roman

    2016-09-01

    Requisite to growing stoichiometric perovskite thin films of the solid-solution A'1-xAxBO3 by hybrid molecular beam epitaxy is understanding how the growth conditions interpolate between the end members A'BO3 and ABO3, which can be grown in a self-regulated fashion, but under different conditions. Using the example of La1-xSrxVO3, the two-dimensional growth parameter space that is spanned by the flux of the metal-organic precursor vanadium oxytriisopropoxide and composition, x, was mapped out. The evolution of the adsorption-controlled growth window was obtained using a combination of X-ray diffraction, atomic force microscopy, reflection high-energy electron-diffraction (RHEED), and Rutherford backscattering spectroscopy. It is found that the stoichiometric growth conditions can be mapped out quickly with a single calibration sample using RHEED. Once stoichiometric conditions have been identified, the out-of-plane lattice parameter can be utilized to precisely determine the composition x. This strategy enables the identification of growth conditions that allow the deposition of stoichiometric perovskite oxide films with random A-site cation mixing, which is relevant to a large number of perovskite materials with interesting properties, e.g., high-temperature superconductivity and colossal magnetoresistance, that emerge in solid solution A'1-xAxBO3.

  19. Comparisons between tokamak fueling of gas puffing and supersonic molecular beam injection in 2D simulations

    DOE PAGESBeta

    Zhou, Y. L.; Wang, Z. H.; Xu, X. Q.; Li, H. D.; Feng, H.; Sun, W. G.

    2015-01-09

    Plasma fueling with high efficiency and deep injection is very important to enable fusion power performance requirements. It is a powerful and efficient way to study neutral transport dynamics and find methods of improving the fueling performance by doing large scale simulations. Furthermore, two basic fueling methods, gas puffing (GP) and supersonic molecular beam injection (SMBI), are simulated and compared in realistic divertor geometry of the HL-2A tokamak with a newly developed module, named trans-neut, within the framework of BOUT++ boundary plasma turbulence code [Z. H. Wang et al., Nucl. Fusion 54, 043019 (2014)]. The physical model includes plasma density,more » heat and momentum transport equations along with neutral density, and momentum transport equations. In transport dynamics and profile evolutions of both plasma and neutrals are simulated and compared between GP and SMBI in both poloidal and radial directions, which are quite different from one and the other. It finds that the neutrals can penetrate about four centimeters inside the last closed (magnetic) flux surface during SMBI, while they are all deposited outside of the LCF during GP. Moreover, it is the radial convection and larger inflowing flux which lead to the deeper penetration depth of SMBI and higher fueling efficiency compared to GP.« less

  20. Red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Saarinen, M.; Xiang, N.; Vilokkinen, V.; Melanen, P.; Orsila, S.; Uusimaa, P.; Savolainen, P.; Toivonen, M.; Pessa, M.

    2001-07-01

    Plastic optical fibres, which have a local attenuation minimum at 650 nm, have attracted much interest for low-cost short-haul communication systems. Red vertical-cavity surface-emitting lasers (VCSELs) provide a potential solution as light sources for these systems. The operation of vertical cavity emitters is based on a Fabry-Perot microcavity, which is formed by placing an optically active region inside of two parallel mirrors. These mirrors are usually formed epitaxially. So far, metal organic chemical vapour deposition (MOCVD) has been the major technology used for growing visible VCSELs. Recently, an alternative growth method—solid-source molecular beam epitaxy (SSMBE)—has been introduced to be a viable solution to the fabrication of these structures. The authors present the first MBE-grown visible AlGaInP vertical-cavity surface-emitting lasers. A laser with a 10 μm emitting window has an external quantum efficiency of 6.65% under continuous wave operation and it is still lasing at 45°C. Furthermore, a threshold current less than 1.0 mA is obtained for a device, which has an 8 μm emitting window.

  1. Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition

    SciTech Connect

    Wang, Yuhan Kittiwatanakul, Salinporn; Lu, Jiwei; Comes, Ryan B.; Wolf, Stuart A.

    2015-03-15

    Epitaxial NbO{sub 2} thin films were synthesized on Al{sub 2}O{sub 3} (0001) substrates via reactive bias target ion beam deposition. X-ray diffraction and Raman spectra were used to confirm the tetragonal phase of pure NbO{sub 2}. Through XPS, it was found that there was a ∼1.3 nm thick Nb{sub 2}O{sub 5} layer on the surface and the bulk of the thin film was NbO{sub 2}. The epitaxial relationship between the NbO{sub 2} film and the substrate was determined. Electrical transport measurement was measured up to 400 K, and the conduction mechanism was discussed.

  2. Focused-electron-beam-induced-deposited cobalt nanopillars for nanomagnetic logic

    NASA Astrophysics Data System (ADS)

    Sharma, N.; van Mourik, R. A.; Yin, Y.; Koopmans, B.; Parkin, S. S. P.

    2016-04-01

    Nanomagnetic logic (NML) intends to alleviate problems of continued miniaturization of CMOS-based electronics, such as energy dissipation through heat, through advantages such as low power operation and non-volatile magnetic elements. In line with recent breakthroughs in NML with perpendicularly magnetized elements formed from thin films, we have fabricated NML inverter chains from Co nanopillars by focused electron beam induced deposition (FEBID) that exhibit shape-induced perpendicular magnetization. The flexibility of FEBID allows optimization of NML structures. Simulations reveal that the choice of nanopillar dimensions is critical to obtain the correct antiferromagnetically coupled configuration. Experiments carrying the array through a clocking cycle using the Oersted field from an integrated Cu wire show that the array responds to the clocking cycle.

  3. Exchange bias in polycrystalline magnetite films made by ion-beam assisted deposition

    SciTech Connect

    Kaur, Maninder; Qiang, You; Jiang, Weilin; Burks, Edward C.; Liu, Kai; Namavar, Fereydoon; McCloy, John S.

    2014-11-07

    Iron oxide films were produced using ion-beam-assisted deposition, and Raman spectroscopy and x-ray diffraction indicate single-phase magnetite. However, incorporation of significant fractions of argon in the films from ion bombardment is evident from chemical analysis, and Fe/O ratios are lower than expected from pure magnetite, suggesting greater than normal disorder. Low temperature magnetometry and first-order reversal curve measurements show strong exchange bias, which likely arises from defects at grain boundaries, possibly amorphous, creating frustrated spins. Since these samples contain grains ∼6 nm, a large fraction of the material consists of grain boundaries, where spins are highly disordered and reverse independently with external field.

  4. Flexible and biocompatible microelectrode arrays fabricated by supersonic cluster beam deposition on SU-8

    NASA Astrophysics Data System (ADS)

    Marelli, Mattia; Divitini, Giorgio; Collini, Cristian; Ravagnan, Luca; Corbelli, Gabriele; Ghisleri, Cristian; Gianfelice, Antonella; Lenardi, Cristina; Milani, Paolo; Lorenzelli, Leandro

    2011-04-01

    We fabricated highly adherent and electrically conductive micropatterns on SU-8 by supersonic cluster beam deposition (SCBD). This technique is based on the aerodynamical acceleration of neutral metallic nanoparticles produced in the gas phase. The kinetic energy acquired by the nanoparticles allows implantation in an SU-8 layer, thus producing a metal-polymer nanocomposite thin layer. The nanocomposite shows ohmic electrical conduction and it can also be used as an adhesion layer for further metallization with a metallic overlayer. We characterized the electrical conduction, adhesion and biocompatibility of microdevices obtained by SCBD on SU-8 demonstrating the compatibility of our approach with standard lift-off technology on 4'' wafer. A self-standing and flexible microelectrode array has been produced. Cytological tests with neuronal cell lines demonstrated improved cell growth on the nanocomposite layer.

  5. Surface excitations in the modelling of electron transport for electron-beam-induced deposition experiments

    PubMed Central

    Valentí, Roser; Werner, Wolfgang S

    2015-01-01

    Summary The aim of the present overview article is to raise awareness of an essential aspect that is usually not accounted for in the modelling of electron transport for focused-electron-beam-induced deposition (FEBID) of nanostructures: Surface excitations are on the one hand responsible for a sizeable fraction of the intensity in reflection-electron-energy-loss spectra for primary electron energies of up to a few kiloelectronvolts and, on the other hand, they play a key role in the emission of secondary electrons from solids, regardless of the primary energy. In this overview work we present a general perspective of recent works on the subject of surface excitations and on low-energy electron transport, highlighting the most relevant aspects for the modelling of electron transport in FEBID simulations. PMID:26171301

  6. Batch fabrication of gold-gold nanogaps by E-beam lithography and electrochemical deposition

    NASA Astrophysics Data System (ADS)

    Wu, Yexian; Hong, Wenjing; Akiyama, Terunobu; Gautsch, Sebastian; Kolivoska, Viliam; Wandlowski, Thomas; de Rooij, Nico F.

    2013-06-01

    We report on the successful development of a well-controlled two-step batch nano-fabrication process to achieve nanometer-size gaps at the wafer scale. The technique is based on an optimized electron-beam lithography process, which enables the fabrication of nanogaps in the range (15 ± 4) nm. Following this first step, the feedback-controlled electrochemical deposition of gold from an aqueous HAuCl4-based electrolyte is applied to further reduce the size of the gap down to about 0.3-1.0 nm. This protocol was successfully demonstrated by fabricating more than 385 nanogaps on a 4 inch wafer. The reproducible fabrication of nanogaps in the range between 0.3 and 1.0 nm opens up new perspectives for addressing the electrical and reactivity properties of single molecules and clusters in confined space under well-controlled conditions.

  7. Focused-electron-beam-induced-deposited cobalt nanopillars for nanomagnetic logic.

    PubMed

    Sharma, N; van Mourik, R A; Yin, Y; Koopmans, B; Parkin, S S P

    2016-04-22

    Nanomagnetic logic (NML) intends to alleviate problems of continued miniaturization of CMOS-based electronics, such as energy dissipation through heat, through advantages such as low power operation and non-volatile magnetic elements. In line with recent breakthroughs in NML with perpendicularly magnetized elements formed from thin films, we have fabricated NML inverter chains from Co nanopillars by focused electron beam induced deposition (FEBID) that exhibit shape-induced perpendicular magnetization. The flexibility of FEBID allows optimization of NML structures. Simulations reveal that the choice of nanopillar dimensions is critical to obtain the correct antiferromagnetically coupled configuration. Experiments carrying the array through a clocking cycle using the Oersted field from an integrated Cu wire show that the array responds to the clocking cycle. PMID:26941232

  8. Thermal Conductivity Measurement of an Electron-Beam Physical-Vapor-Deposition Coating

    PubMed Central

    Slifka, A. J.; Filla, B. J.

    2003-01-01

    An industrial ceramic thermal-barrier coating designated PWA 266, processed by electron-beam physical-vapor deposition, was measured using a steady-state thermal conductivity technique. The thermal conductivity of the mass fraction 7 % yttria-stabilized zirconia coating was measured from 100 °C to 900 °C. Measurements on three thicknesses of coatings, 170 μm, 350 μm, and 510 μm resulted in thermal conductivity in the range from 1.5 W/(m·K) to 1.7 W/(m·K) with a combined relative standard uncertainty of 20 %. The thermal conductivity is not significantly dependent on temperature. PMID:27413601

  9. Phosphorylation modifies the molecular stability of β-amyloid deposits

    PubMed Central

    Rezaei-Ghaleh, Nasrollah; Amininasab, Mehriar; Kumar, Sathish; Walter, Jochen; Zweckstetter, Markus

    2016-01-01

    Protein aggregation plays a crucial role in neurodegenerative diseases. A key feature of protein aggregates is their ubiquitous modification by phosphorylation. Little is known, however, about the molecular consequences of phosphorylation of protein aggregates. Here we show that phosphorylation of β-amyloid at serine 8 increases the stability of its pathogenic aggregates against high-pressure and SDS-induced dissociation. We further demonstrate that phosphorylation results in an elevated number of hydrogen bonds at the N terminus of β-amyloid, the region that is critically regulated by a variety of post-translational modifications. Because of the increased lifetime of phosphorylated β-amyloid aggregates, phosphorylation can promote the spreading of β-amyloid in Alzheimer pathogenesis. Our study suggests that regulation of the molecular stability of protein aggregates by post-translational modifications is a crucial factor for disease progression in the brain. PMID:27072999

  10. Phosphorylation modifies the molecular stability of β-amyloid deposits

    NASA Astrophysics Data System (ADS)

    Rezaei-Ghaleh, Nasrollah; Amininasab, Mehriar; Kumar, Sathish; Walter, Jochen; Zweckstetter, Markus

    2016-04-01

    Protein aggregation plays a crucial role in neurodegenerative diseases. A key feature of protein aggregates is their ubiquitous modification by phosphorylation. Little is known, however, about the molecular consequences of phosphorylation of protein aggregates. Here we show that phosphorylation of β-amyloid at serine 8 increases the stability of its pathogenic aggregates against high-pressure and SDS-induced dissociation. We further demonstrate that phosphorylation results in an elevated number of hydrogen bonds at the N terminus of β-amyloid, the region that is critically regulated by a variety of post-translational modifications. Because of the increased lifetime of phosphorylated β-amyloid aggregates, phosphorylation can promote the spreading of β-amyloid in Alzheimer pathogenesis. Our study suggests that regulation of the molecular stability of protein aggregates by post-translational modifications is a crucial factor for disease progression in the brain.

  11. Towards a single step process to create high purity gold structures by electron beam induced deposition at room temperature.

    PubMed

    Mansilla, C; Mehendale, S; Mulders, J J L; Trompenaars, P H F

    2016-10-14

    Highly pure metallic structures can be deposited by electron beam induced deposition and they have many important applications in different fields. The organo-metallic precursor is decomposed and deposited under the electron beam, and typically it is purified with post-irradiation in presence of O2. However, this approach limits the purification to the surface of the deposit. Therefore, 'in situ' purification during deposition using simultaneous flows of both O2 and precursor in parallel with two gas injector needles has been tested and verified. To simplify the practical arrangements, a special concentric nozzle has been designed allowing deposition and purification performed together in a single step. With this new device metallic structures with high purity can be obtained more easily, while there is no limit on the height of the structures within a practical time frame. In this work, we summarize the first results obtained for 'in situ' Au purification using this concentric nozzle, which is described in more detail, including flow simulations. The operational parameter space is explored in order to optimize the shape as well as the purity of the deposits, which are evaluated through scanning electron microscope and energy dispersive x-ray spectroscopy measurements, respectively. The observed variations are interpreted in relation to other variables, such as the deposition yield. The resistivity of purified lines is also measured, and the influence of additional post treatments as a last purification step is studied. PMID:27587078

  12. Towards a single step process to create high purity gold structures by electron beam induced deposition at room temperature

    NASA Astrophysics Data System (ADS)

    Mansilla, C.; Mehendale, S.; Mulders, J. J. L.; Trompenaars, P. H. F.

    2016-10-01

    Highly pure metallic structures can be deposited by electron beam induced deposition and they have many important applications in different fields. The organo-metallic precursor is decomposed and deposited under the electron beam, and typically it is purified with post-irradiation in presence of O2. However, this approach limits the purification to the surface of the deposit. Therefore, ‘in situ’ purification during deposition using simultaneous flows of both O2 and precursor in parallel with two gas injector needles has been tested and verified. To simplify the practical arrangements, a special concentric nozzle has been designed allowing deposition and purification performed together in a single step. With this new device metallic structures with high purity can be obtained more easily, while there is no limit on the height of the structures within a practical time frame. In this work, we summarize the first results obtained for ‘in situ’ Au purification using this concentric nozzle, which is described in more detail, including flow simulations. The operational parameter space is explored in order to optimize the shape as well as the purity of the deposits, which are evaluated through scanning electron microscope and energy dispersive x-ray spectroscopy measurements, respectively. The observed variations are interpreted in relation to other variables, such as the deposition yield. The resistivity of purified lines is also measured, and the influence of additional post treatments as a last purification step is studied.

  13. Towards a single step process to create high purity gold structures by electron beam induced deposition at room temperature.

    PubMed

    Mansilla, C; Mehendale, S; Mulders, J J L; Trompenaars, P H F

    2016-10-14

    Highly pure metallic structures can be deposited by electron beam induced deposition and they have many important applications in different fields. The organo-metallic precursor is decomposed and deposited under the electron beam, and typically it is purified with post-irradiation in presence of O2. However, this approach limits the purification to the surface of the deposit. Therefore, 'in situ' purification during deposition using simultaneous flows of both O2 and precursor in parallel with two gas injector needles has been tested and verified. To simplify the practical arrangements, a special concentric nozzle has been designed allowing deposition and purification performed together in a single step. With this new device metallic structures with high purity can be obtained more easily, while there is no limit on the height of the structures within a practical time frame. In this work, we summarize the first results obtained for 'in situ' Au purification using this concentric nozzle, which is described in more detail, including flow simulations. The operational parameter space is explored in order to optimize the shape as well as the purity of the deposits, which are evaluated through scanning electron microscope and energy dispersive x-ray spectroscopy measurements, respectively. The observed variations are interpreted in relation to other variables, such as the deposition yield. The resistivity of purified lines is also measured, and the influence of additional post treatments as a last purification step is studied.

  14. Measurement and Analysis of Rotational Energy of Nitrogen Molecular Beam by REMPI

    SciTech Connect

    Mori, H.; Yamaguchi, H.; Kataoka, K.; Sugiyama, N.; Ide, K.; Niimi, T.

    2008-12-31

    Molecular beams are powerful tools for diagnoses of solid surfaces and gas-surface interaction tests. Unfortunately, there are very few reports about experimental analysis of internal energy distribution (e.g. rotational energy) of molecular beams of diatomic or polyatomic molecules, because measurement of internal energy distribution is very difficult. Spectroscopic measurement techniques based on resonantly enhanced multiphoton ionization (REMPI) is very powerful for measurement in highly rarefied gas flows. In this study, the REMPI method is applied to measurement of rotational energy distribution of nitrogen molecular beams. The REMPI spectrum of the molecular beam indicates the rotational temperature higher than the translational temperature of 7.2 K estimated by assuming isentropic flows. The O and P branches of the REMPI spectrum correspond to the rotational temperature of 30 K, but the S branch of the spectrum deviates from that at 30 K. It seems to be because the non-equilibrium rotational energy distribution of the molecular beam deviates from the Boltzmann distribution.

  15. Electron-beam-induced deposition and post-treatment processes to locally generate clean titanium oxide nanostructures on Si(100).

    PubMed

    Schirmer, M; Walz, M-M; Vollnhals, F; Lukasczyk, T; Sandmann, A; Chen, C; Steinrück, H-P; Marbach, H

    2011-02-25

    We have investigated the lithographic generation of TiO(x) nanostructures on Si(100) via electron-beam-induced deposition (EBID) of titanium tetraisopropoxide (TTIP) in ultra-high vacuum (UHV) by scanning electron microscopy (SEM) and local Auger electron spectroscopy (AES). In addition, the fabricated nanostructures were also characterized ex situ via atomic force microscopy (AFM) under ambient conditions. In EBID, a highly focused electron beam is used to locally decompose precursor molecules and thereby to generate a deposit. A drawback of this nanofabrication technique is the unintended deposition of material in the vicinity of the impact position of the primary electron beam due to so-called proximity effects. Herein, we present a post-treatment procedure to deplete the unintended deposits by moderate sputtering after the deposition process. Moreover, we were able to observe the formation of pure titanium oxide nanocrystals (<100 nm) in situ upon heating the sample in a well-defined oxygen atmosphere. While the nanocrystal growth for the as-deposited structures also occurs in the surroundings of the irradiated area due to proximity effects, it is limited to the pre-defined regions, if the sample was sputtered before heating the sample under oxygen atmosphere. The described two-step post-treatment procedure after EBID presents a new pathway for the fabrication of clean localized nanostructures. PMID:21242619

  16. Electron-beam-induced deposition and post-treatment processes to locally generate clean titanium oxide nanostructures on Si(100)

    NASA Astrophysics Data System (ADS)

    Schirmer, M.; Walz, M.-M.; Vollnhals, F.; Lukasczyk, T.; Sandmann, A.; Chen, C.; Steinrück, H.-P.; Marbach, H.

    2011-02-01

    We have investigated the lithographic generation of TiOx nanostructures on Si(100) via electron-beam-induced deposition (EBID) of titanium tetraisopropoxide (TTIP) in ultra-high vacuum (UHV) by scanning electron microscopy (SEM) and local Auger electron spectroscopy (AES). In addition, the fabricated nanostructures were also characterized ex situ via atomic force microscopy (AFM) under ambient conditions. In EBID, a highly focused electron beam is used to locally decompose precursor molecules and thereby to generate a deposit. A drawback of this nanofabrication technique is the unintended deposition of material in the vicinity of the impact position of the primary electron beam due to so-called proximity effects. Herein, we present a post-treatment procedure to deplete the unintended deposits by moderate sputtering after the deposition process. Moreover, we were able to observe the formation of pure titanium oxide nanocrystals (<100 nm) in situ upon heating the sample in a well-defined oxygen atmosphere. While the nanocrystal growth for the as-deposited structures also occurs in the surroundings of the irradiated area due to proximity effects, it is limited to the pre-defined regions, if the sample was sputtered before heating the sample under oxygen atmosphere. The described two-step post-treatment procedure after EBID presents a new pathway for the fabrication of clean localized nanostructures.

  17. Closed-Loop Process Control for Electron Beam Freeform Fabrication and Deposition Processes

    NASA Technical Reports Server (NTRS)

    Taminger, Karen M. (Inventor); Hafley, Robert A. (Inventor); Martin, Richard E. (Inventor); Hofmeister, William H. (Inventor)

    2013-01-01

    A closed-loop control method for an electron beam freeform fabrication (EBF(sup 3)) process includes detecting a feature of interest during the process using a sensor(s), continuously evaluating the feature of interest to determine, in real time, a change occurring therein, and automatically modifying control parameters to control the EBF(sup 3) process. An apparatus provides closed-loop control method of the process, and includes an electron gun for generating an electron beam, a wire feeder for feeding a wire toward a substrate, wherein the wire is melted and progressively deposited in layers onto the substrate, a sensor(s), and a host machine. The sensor(s) measure the feature of interest during the process, and the host machine continuously evaluates the feature of interest to determine, in real time, a change occurring therein. The host machine automatically modifies control parameters to the EBF(sup 3) apparatus to control the EBF(sup 3) process in a closed-loop manner.

  18. Dual-ion-beam deposition of carbon films with diamond-like properties

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1985-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamond like films generated by sputtering a graphite target.

  19. Three-dimensional core–shell ferromagnetic nanowires grown by focused electron beam induced deposition

    NASA Astrophysics Data System (ADS)

    Pablo-Navarro, Javier; Magén, César; María de Teresa, José

    2016-07-01

    Functional nanostructured materials often rely on the combination of more than one material to confer the desired functionality or an enhanced performance of the device. Here we report the procedure to create nanoscale heterostructured materials in the form of core–shell nanowires by focused electron beam induced deposition (FEBID) technologies. In our case, three-dimensional (3D) nanowires (<100 nm in diameter) with metallic ferromagnetic cores of Co- and Fe-FEBID have been grown and coated with a protective Pt-FEBID shell (ranging 10–20 nm in thickness) aimed to minimize the degradation of magnetic properties caused by the surface oxidation of the core to a non-ferromagnetic material. The structure, chemistry and magnetism of nanowire cores of Co and Fe have been characterized in Pt-coated and uncoated nanostructures to demonstrate that the morphology of the shell is conserved during Pt coating, the surface oxidation is suppressed or confined to the Pt layer, and the average magnetization of the core is strengthened up to 30%. The proposed approach paves the way to the fabrication of 3D FEBID nanostructures based on the smart alternate deposition of two or more materials combining different physical properties or added functionalities.

  20. Chemical tuning of PtC nanostructures fabricated via focused electron beam induced deposition.

    PubMed

    Plank, Harald; Haber, Thomas; Gspan, Christian; Kothleitner, Gerald; Hofer, Ferdinand

    2013-05-01

    The fundamental dependence between process parameters during focused electron beam induced deposition and the chemistry of functional PtC nanostructures have been studied via a multi-technique approach using SEM, (S)TEM, EELS, AFM, and EFM. The study reveals that the highest Pt contents can only be achieved by an ideal balance between potentially dissociating electrons and available precursor molecules on the surface. For precursor regimes apart from this situation, an unwanted increase of carbon is observed which originates from completely different mechanisms: (1) an excess of electrons leads to polymerization of precursor fragments whereas (2) a lack of electrons leads to incompletely dissociated precursor molecules incorporated into the nanostructures. While the former represents an unwanted class of carbon, the latter condition maximizes the volume growth rates and allows for post-growth curing strategies which can strongly increase the functionality. Furthermore, the study gives an explanation of why growing deposits can dynamically change their chemistry and provides a straightforward guide towards more controlled fabrication conditions.

  1. Exchange bias of MnPt/CoFe films prepared by ion beam deposition

    NASA Astrophysics Data System (ADS)

    Rickart, M.; Freitas, P. P.; Trindade, I. G.; Barradas, N. P.; Alves, E.; Salgueiro, M.; Muga, N.; Ventura, J.; Sousa, J. B.; Proudfoot, G.; Pearson, D.; Davis, M.

    2004-06-01

    We report on exchange bias of Mn100-xPtx/Co90Fe10 bottom-pinned bilayers prepared by ion beam deposition. The Pt content in the film was varied 6 at. % with x between 46 and 52 at. % by changing the angle of substrate relative to the target in a range of 40°. Exchange coupling for a Mn100-xPtx(20 nm)/Co90Fe10(5 nm) bilayer was found to be maximum (Jex=0.34 erg/cm2) at a composition with x=50 at. %. Structure and magnetic properties of the bilayers deposited on Ta, Ta/Ru, and Ta/Ni81Fe19 seed layers were studied by vibrating sample magnetometry, x-ray diffraction, Rutherford backscattering spectroscopy, and atomic force microscopy. Exchange bias and coercive field can be tuned as functions of the seed layer. The effect of different annealing conditions on exchange bias is discussed to improve thermal stability of the bilayers. Maximum exchange coupling is obtained at an annealing temperature TA⩾280 °C, while the blocking temperature TB keeps increasing with annealing up to TA=420 °C.

  2. Structural and magnetic studies of thin Fe57 films formed by ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Lyadov, N. M.; Bazarov, V. V.; Vagizov, F. G.; Vakhitov, I. R.; Dulov, E. N.; Kashapov, R. N.; Noskov, A. I.; Khaibullin, R. I.; Shustov, V. A.; Faizrakhmanov, I. A.

    2016-08-01

    Thin Fe57 films with the thickness of 120 nm have been prepared on glass substrates by using the ion-beam-assisted deposition technique. X-ray diffraction, electron microdiffraction and Mössbauer spectroscopy studies have shown that as-deposited films are in a stressful nanostructured state containing the nanoscaled inclusions of α-phase iron with the size of ∼10 nm. Room temperature in-plane and out-of-plane magnetization measurements confirmed the presence of the magnetic α-phase in the iron film and indicated the strong effect of residual stresses on magnetic properties of the film as well. Subsequent thermal annealing of iron films in vacuum at the temperature of 450 °C stimulates the growth of α-phase Fe crystallites with the size of up to 20 nm. However, electron microdiffraction and Mössbauer spectroscopic data have shown the partial oxidation and carbonization of the iron film during annealing. The stress disappeared after annealing of the film. The magnetic behaviour of the annealed samples was characterized by the magnetic hysteresis loop with the coercive field of ∼10 mT and the saturation magnetization decreased slightly in comparison with the α-phase Fe magnetization due to small oxidation of the film.

  3. Fabrication of high-aspect-ratio carbon nanocone probes by electron beam induced deposition patterning

    NASA Astrophysics Data System (ADS)

    Chen, I.-Chen; Chen, Li-Han; Orme, Christine; Quist, Arjan; Lal, Ratnesh; Jin, Sungho

    2006-09-01

    A high-aspect-ratio cone-shaped carbon nanotube (CNT), which we refer to as a carbon nanocone (CNC), was fabricated for scanning probe microscopy (SPM) by a novel and reliable patterning technique and dc plasma chemical vapour deposition. Carbon dots from electron beam induced deposition (EBID) were utilized as convenient chemical-etch masks to create catalyst patterns for the growth of a single CNC probe on a tipless cantilever and an array of CNC probes on a silicon substrate. This resist-free EBID process is an efficient way of preparing a patterned catalyst and resultant nanoprobe on the specific edge location of the cantilever. The CNC probe produces high-resolution images of specimens in air as well as in liquid. No degradation in imaging performance was observed after a period of continuous scanning. The CNC bed-of-nails array imaged in contact mode by a commercial Si3N4 probe demonstrates the mechanical toughness/sturdiness of the CNC tip. This also indicates the possibility of using the CNC bed-of-nails as a convenient means for the characterization of SPM tips.

  4. Computational study of transport and energy deposition of intense laser-accelerated proton beams in solid density matter

    NASA Astrophysics Data System (ADS)

    Kim, J.; McGuffey, C.; Qiao, B.; Beg, F. N.; Wei, M. S.; Grabowski, P. E.

    2015-11-01

    With intense proton beams accelerated by high power short pulse lasers, solid targets are isochorically heated to become partially-ionized warm or hot dense matter. In this regime, the thermodynamic state of the matter significantly changes, varying the proton stopping power where both bound and free electrons contribute. Additionally, collective beam-matter interaction becomes important to the beam transport. We present self-consistent hybrid particle-in-cell (PIC) simulation results of proton beam transport and energy deposition in solid-density matter, where the individual proton stopping and the collective effects are taken into account simultaneously with updates of stopping power in the varying target conditions and kinetic motions of the beam in the driven fields. Broadening of propagation range and self-focusing of the beam led to unexpected target heating by the intense proton beams, with dependence on the beam profiles and target conditions. The behavior is specifically studied for the case of an experimentally measured proton beam from the 1.25 kJ, 10 ps OMEGA EP laser transporting through metal foils. This work was supported by the U.S. DOE under Contracts No. DE-NA0002034 and No. DE-AC52-07NA27344 and by the U.S. AFOSR under Contract FA9550-14-1-0346.

  5. Ion beam assisted deposition of Si-diamond-like carbon coatings on large area substrates

    SciTech Connect

    Fountzoulas, C.G.

    1996-12-31

    Hard, low-friction silicon-containing diamond-like carbon coatings (Si-DLC), were formed by Ar{sup +} ion beam assisted deposition (IBAD), on 5 in. diameter silicon wafers. The diffusion pump oil precursor (tetraphenyl-tetramethyl-trisiloxane: (C{sub 6}H{sub 5}){sub 4}(CH{sub 3}){sub 4}Si{sub 3}O{sub 2}) was evaporated through seven, 3 mm diameter, closely packed apertures (multinozzle/multi-aperture container) arranged in a hexagonal pattern, approximately 5 mm apart according to mathematical model developed at ARL describing the spatial distribution of film deposition from nozzles and apertures onto inclined substrates. The ion energy was kept at 40 keV whereas the ion current density and the oil evaporation temperature were varied to produce hard, lubricious and adherent films. The multinozzle array allowed the relatively uniform ({+-} 20%) coverage of the entire 5 in. substrate. The thickness and the microhardness of the films were measured along the rectilinear surface coordinates of the substrate area. Depending on the deposition parameters the standard deviation of the coating thicknesses and Knoop microhardness varied from 14 to 30% respectively over the substrate. This is a significant improvement from the previously used single nozzle set up where the standard deviation of the coating thickness was 50 to 100% for 2 in. diameter substrates. The Knoop microhardness and the sliding friction coefficient of these coatings ranged from 10,000 to 20,000 MPa and 0.04 and 0.2 respectively. These values are in agreement with the previously reported single nozzle results.

  6. Fluoropolymer Films Deposited by Argon Ion-Beam Sputtering of Polytetrafluoroethylene

    NASA Technical Reports Server (NTRS)

    Golub, Morton A.; Banks, Bruce A.; Kliss, Mark (Technical Monitor)

    1998-01-01

    The FT-IR, XPS and UV spectra of fluoropolymer films (SPTFE-I) deposited by argon ion-beam sputtering of polytetrafluoroethylene (PTFE) were obtained and compared with prior corresponding spectra of fluoropolymer films (SPTFE-P) deposited by argon rf plasma sputtering of PTFE. Although the F/C ratios for SPTFE-I and -P (1.63 and 1.51) were similar, their structures were quite different in that there was a much higher concentration of CF2 groups in SPTFE-I than in SPTFE-P, ca. 61 and 33% of the total carbon contents, respectively. The FT-IR spectra reflect that difference, that for SPTFE-I showing a distinct doublet at 1210 and 1150 per centimeter while that for SPTFE-P presents a broad, featureless band at ca. 1250 per centimeter. The absorbance of the 1210-per centimeter band in SPTFE-I was proportional to the thickness of the film, in the range of 50-400 nanometers. The SPTFE-I was more transparent in the UV than SPTFE-P at comparable thickness. The mechanism for SPTFE-I formation likely involves "chopping off" of oligomeric segments of PTFE as an accompaniment to "plasma" polymerization of TFE monomer or other fluorocarbon fragments generated in situ from PTFE on impact with energetic Ar ions. Data are presented for SPTFE-I deposits and the associated Ar(+) bombarded PTFE targets where a fresh target was used for each run or a single target was used for a sequence of runs.

  7. Reticle blanks for extreme ultraviolet lithography: Ion beam sputter deposition of low defect density Mo/Si multilayers

    SciTech Connect

    Vernon, S.P.; Kania, D.R.; Kearney, P.A.; Levesque, R.A.; Hayes, A.V.; Druz, B.; Osten, E.; Rajan, R.; Hedge, H.

    1996-06-24

    We report on growth of low defect density Mo/Si multilayer (ML) coatings. The coatings were grown in a deposition system designed for EUVL reticle blank fabrication. Complete, 81 layer, high reflectance Mo/Si ML coatings were deposited on 150 mm dia (100) oriented Si wafer substrates using ion beam sputter deposition. Added defects, measured by optical scattering, correspond to defect densities of 2x10{sup -2}/cm{sup 2}. This represents a reduction in defect density of Mo/Si ML coatings by a factor of 10{sup 5}.

  8. Chemical composition, morphology and optical properties of zinc sulfide coatings deposited by low-energy electron beam evaporation

    NASA Astrophysics Data System (ADS)

    Ragachev, A. V.; Yarmolenko, M. A.; Rogachev, A. A.; Gorbachev, D. L.; Zhou, Bing

    2014-06-01

    The research determines the features of formation, morphology, chemical composition and optical properties of the coatings deposited by the method, proposed for the first time, of the exposure of mechanical mixture of zinc and sulfur powders to low-energy electron beam evaporation. The findings show that the deposited coatings are characterized by high chemical and structural homogeneity in thickness. The study considers the influence of substrate temperature and thickness of the deposited layer on the morphology and the width of the formed ZnS thin layers band gap. Also was shown the possibility to form ZnS coatings with this method using the mixture of zinc and copper sulfide powders.

  9. Quantum state specific reactant preparation in a molecular beam by rapid adiabatic passage.

    PubMed

    Chadwick, Helen; Hundt, P Morten; van Reijzen, Maarten E; Yoder, Bruce L; Beck, Rainer D

    2014-01-21

    Highly efficient preparation of molecules in a specific rovibrationally excited state for gas/surface reactivity measurements is achieved in a molecular beam using tunable infrared (IR) radiation from a single mode continuous wave optical parametric oscillator (cw-OPO). We demonstrate that with appropriate focusing of the IR radiation, molecules in the molecular beam crossing the fixed frequency IR field experience a Doppler tuning that can be adjusted to achieve complete population inversion of a two-level system by rapid adiabatic passage (RAP). A room temperature pyroelectric detector is used to monitor the excited fraction in the molecular beam and the population inversion is detected and quantified using IR bleaching by a second IR-OPO. The second OPO is also used for complete population transfer to an overtone or combination vibration via double resonance excitation using two spatially separated RAP processes.

  10. Quantum state specific reactant preparation in a molecular beam by rapid adiabatic passage.

    PubMed

    Chadwick, Helen; Hundt, P Morten; van Reijzen, Maarten E; Yoder, Bruce L; Beck, Rainer D

    2014-01-21

    Highly efficient preparation of molecules in a specific rovibrationally excited state for gas/surface reactivity measurements is achieved in a molecular beam using tunable infrared (IR) radiation from a single mode continuous wave optical parametric oscillator (cw-OPO). We demonstrate that with appropriate focusing of the IR radiation, molecules in the molecular beam crossing the fixed frequency IR field experience a Doppler tuning that can be adjusted to achieve complete population inversion of a two-level system by rapid adiabatic passage (RAP). A room temperature pyroelectric detector is used to monitor the excited fraction in the molecular beam and the population inversion is detected and quantified using IR bleaching by a second IR-OPO. The second OPO is also used for complete population transfer to an overtone or combination vibration via double resonance excitation using two spatially separated RAP processes. PMID:25669393

  11. Quantum state specific reactant preparation in a molecular beam by rapid adiabatic passage

    SciTech Connect

    Chadwick, Helen Hundt, P. Morten; Reijzen, Maarten E. van; Yoder, Bruce L.; Beck, Rainer D.

    2014-01-21

    Highly efficient preparation of molecules in a specific rovibrationally excited state for gas/surface reactivity measurements is achieved in a molecular beam using tunable infrared (IR) radiation from a single mode continuous wave optical parametric oscillator (cw-OPO). We demonstrate that with appropriate focusing of the IR radiation, molecules in the molecular beam crossing the fixed frequency IR field experience a Doppler tuning that can be adjusted to achieve complete population inversion of a two-level system by rapid adiabatic passage (RAP). A room temperature pyroelectric detector is used to monitor the excited fraction in the molecular beam and the population inversion is detected and quantified using IR bleaching by a second IR-OPO. The second OPO is also used for complete population transfer to an overtone or combination vibration via double resonance excitation using two spatially separated RAP processes.

  12. Quantum state specific reactant preparation in a molecular beam by rapid adiabatic passage

    NASA Astrophysics Data System (ADS)

    Chadwick, Helen; Hundt, P. Morten; van Reijzen, Maarten E.; Yoder, Bruce L.; Beck, Rainer D.

    2014-01-01

    Highly efficient preparation of molecules in a specific rovibrationally excited state for gas/surface reactivity measurements is achieved in a molecular beam using tunable infrared (IR) radiation from a single mode continuous wave optical parametric oscillator (cw-OPO). We demonstrate that with appropriate focusing of the IR radiation, molecules in the molecular beam crossing the fixed frequency IR field experience a Doppler tuning that can be adjusted to achieve complete population inversion of a two-level system by rapid adiabatic passage (RAP). A room temperature pyroelectric detector is used to monitor the excited fraction in the molecular beam and the population inversion is detected and quantified using IR bleaching by a second IR-OPO. The second OPO is also used for complete population transfer to an overtone or combination vibration via double resonance excitation using two spatially separated RAP processes.

  13. Molecular dynamics simulation of energetic atom depositions of Au/Au(100) film

    NASA Astrophysics Data System (ADS)

    Qing-yu, Zhang; Zheng-ying, Pan; Jia-yong, Tang

    1999-04-01

    The energetic atom deposition of thin Au/Au(100) film has been studied by molecular dynamics simulation using the Au-Au interatomic interaction potential with embedded atom method. By investigating the variation of coverage curves and Bragg diffraction intensities during the film growth, the transition of Stranski-Kranstanov growth mode to Frank-van der Merwe growth mode was observed with the increase of the incident energy of deposition atoms. The role of energetic atoms in the film growth is discussed by analyzing the transport properties of deposited atoms and the evolution of incident energy and substrate temperatures.

  14. Monte Carlo approach to the spatial deposition of energy by electrons in molecular hydrogen

    NASA Technical Reports Server (NTRS)

    Heaps, M. G.; Green, A. E. S.

    1974-01-01

    The Monte Carlo (MC) and continuous slowdown approximation (CSDA) approaches to the spatial deposition of energy by electrons are compared using the same detailed atomic cross section (DACS). It is found that the CSDA method overestimates the amount of energy that is deposited near the end of the path for electrons above a few hundred electron volts. The MC results are in approximate agreement with experimental data in such a way as to be relatively independent of the actual gas used. Our MC results are extended to obtain the three-dimensional deposition of energy by sub-keV electrons in molecular hydrogen.

  15. Effects of high source flow and high pumping speed on gas source molecular beam epitaxy / chemical beam epitaxy

    NASA Astrophysics Data System (ADS)

    McCollum, M. J.; Jackson, S. L.; Szafranek, I.; Stillman, G. E.

    1990-10-01

    We report the growth of GaAs by molecular beam epitaxy (MBE), gas source molecular beam epitaxy (GSMBE), and chemical beam epitaxy (CBE) in an epitaxial III-V reactor which features high pumping speed. The system is comprised of a modified Perkin-Elmer 430P molecular beam epitaxy system and a custom gas source panel from Emcore. The growth chamber is pumped with a 7000 1/s (He) diffusion pump (Varian VHS-10 with Monsanto Santovac 5 oil). The gas source panel includes pressure based flow controllers (MKS 1150) allowing triethylaluminum (TEA), triethylgallium (TEG), and trimethylindium (TMI) to be supplied without the use of hydrogen. All source lines, including arsine and phosphine, are maintained below atmospheric pressure. The high pumping speed allows total system flow rates as high as 100 SCCM and V/III ratios as high as 100. The purity of GaAs grown by MBE in this system increases with pumping speed. GaAs layers grown by GSMBE with arsine flows of 10 and 20 SCCM have electron concentrations of 1 × 10 15 cm -3 (μ 77=48,000 cm 2/V·) and 2 × 10 14 cm -3 (μ 77=78,000 cm 2/V·s) respectively. El ectron concentration varies with hydride injector temperature such that the minimum in electron concentration occurs for less than complete cracking. The effect of V/III ratio and the use of a metal eutectic bubbler on residual carrier concentration in GaAs grown by CBE is presented. Intentional Si and Be doping of CBE grown GaAs is demonstrated at a high growth rate of 5.4 μm/h.

  16. A non-diaphragm type small shock tube for application to a molecular beam source

    NASA Astrophysics Data System (ADS)

    Yoshimoto, Yuta; Osuka, Kenichi; Miyoshi, Nobuya; Kinefuchi, Ikuya; Takagi, Shu; Matsumoto, Yoichiro

    2013-07-01

    A non-diaphragm type small shock tube was developed for application to a molecular beam source, which can generate beams in the energy range from 1 to several electron volts and beams containing dissociated species such as atomic oxygen. Since repetitive high-frequency operation is indispensable for rapid signal acquisition in beam scattering experiments, the dimensions of the shock tube were miniaturized to reduce the evacuation time between shots. The designed shock tube is 2-4 mm in diameter and can operate at 0.5 Hz. Moreover, a high shock Mach number at the tube end is required for high-energy molecular beam generation. To reduce the shock attenuation caused by the wall boundary layer, which becomes significant in small-diameter tubes, we developed a high-speed response valve employing the current-loop mechanism. The response time of this mechanism is about 100 μs, which is shorter than the rupture time of conventional diaphragms. We show that the current-loop valve generates shock waves with shorter formation distances (about 200-300 mm) than those of conventional shock tubes. In addition, the converging geometry efficiently accelerates shock wave in the small-diameter tubes. The optimal geometry of the shock tube yields shock Mach number around 7, which indicates that the translation energy of molecular beams can exceed 1 eV even in the presence of the real gas effect.

  17. In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy.

    PubMed

    Lee, Jonghoon; Varshney, Vikas; Park, Jeongho; Farmer, Barry L; Roy, Ajit K

    2016-05-01

    Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested.

  18. In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy.

    PubMed

    Lee, Jonghoon; Varshney, Vikas; Park, Jeongho; Farmer, Barry L; Roy, Ajit K

    2016-05-01

    Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested. PMID:27108606

  19. High-Energy Molecular Beam Source Using a Non-Diaphragm Type Small Shock Tube

    NASA Astrophysics Data System (ADS)

    Yoshimoto, Yuta; Miyoshi, Nobuya; Kinefuchi, Ikuya; Shimizu, Kazuya; Takagi, Shu; Matsumoto, Yoichiro

    2010-11-01

    The molecular beam technique is one of the powerful tools to analyze gas-surface interactions. In order to generate high-energy molecular beam in a range of 1 - 5 eV, which corresponds to the typical activation energy of surface reactions, we are developing a beam source using a non-diaphragm type shock tube, which can operate at a repetition rate high enough for efficient data acquisition. We made the volume of a tube much smaller than that of conventional ones so that the evacuation time between each shot becomes as short as possible. Our measurement of shock Mach numbers showed that even small diameter (2 or 4 mm) tubes, in which the wall boundary layer has a large influence on the propagation of shock waves, could generate molecular beam with the translational energy of more than 1 eV. This is because the reduction of shock formation distance by rapid opening of the valve, which separates a high pressure room from a low pressure room, weakened the effect of viscous damping on the accelerating shock wave. In addition, the convergent shock tubes of which diameters linearly decrease from 4 to 2 mm exhibited higher Mach numbers than straight ones. This indicates that the application of the convergent tube with the optimized geometry would be promising for generating high-energy molecular beam.

  20. Use of molecular beams to support microspheres during plasma coating

    SciTech Connect

    Crane, J.K.; Smith, R.D.; Johnson, W.L.; Letts, S.A.; Korbel, G.R.; Krenick, R.M.

    1980-08-26

    Spherical laser fusion targets can be levitated on beams of Ar or other gas atoms. This is an especially useful and reliable technique for supporting microspheres during plasma coating or plasma etching. The reliability of this technique is principally the result of two things: the success of a special centering device which provides a lateral, stabilizing force on the levitated microspheres; and a gas handling system which is capable of controlling levitation gas flow in the microtorr liter/sec range. We have determined that the operational regime of this device is that of Knudsen's flow. This knowledge of the flow characteristics has been important in developing this device.

  1. Molecular Beam Studies of Hot Atom Chemical Reactions: Reactive Scattering of Energetic Deuterium Atoms

    DOE R&D Accomplishments Database

    Continetti, R. E.; Balko, B. A.; Lee, Y. T.

    1989-02-01

    A brief review of the application of the crossed molecular beams technique to the study of hot atom chemical reactions in the last twenty years is given. Specific emphasis is placed on recent advances in the use of photolytically produced energetic deuterium atoms in the study of the fundamental elementary reactions D + H{sub 2} -> DH + H and the substitution reaction D + C{sub 2}H{sub 2} -> C{sub 2}HD + H. Recent advances in uv laser and pulsed molecular beam techniques have made the detailed study of hydrogen atom reactions under single collision conditions possible.

  2. Simple Validation of Transient Plume Models Using Molecular Beam-Related Applications

    SciTech Connect

    Woronowicz, M. S.

    2008-12-31

    A simple effort using molecular beam data to compare the results of two different transient free molecule point source models was performed, motivated by a desire to determine the utility of such formulations for a variety of time-dependent applications. These models are evaluated against effusive molecular beam time-of-flight data, as well as behavior observed in pulsed laser ablation experiments and high-fidelity direct simulation Monte Carlo results. Such comparisons indicate that the physical behavior of these time-dependent expansions require taking a surface-enforced directional bias into account. This bias has been absent in a number of investigative formulations, both historical and current.

  3. Reduced electrical impedance of SiO{sub 2}, deposited through focused ion beam based systems, due to impurity percolation

    SciTech Connect

    Faraby, H.; DiBattista, M.; Bandaru, P. R.

    2014-11-28

    The electrical impedance (both the resistive and capacitive aspects) of focused ion beam (FIB) deposited SiO{sub 2} has been correlated to the specific composition of the ion beam, in Ga- and Xe-based FIB systems. The presence of electrically percolating Ga in concert with carbon (inevitably found as the product of the hydrocarbon precursor decomposition) has been isolated as a major cause for the observed decrease in the resistivity of the deposited SiO{sub 2}. Concomitant with the decreased resistivity, an increased capacitance and effective dielectric constant was observed. Our study would be useful to understand the constraints to the deposition of high quality insulator films through FIB based methodologies.

  4. In situ study of e-beam Al and Hf metal deposition on native oxide InP (100)

    SciTech Connect

    Dong, H.; KC, Santosh; Azcatl, A.; Cabrera, W.; Qin, X.; Brennan, B.; Cho, K.; Wallace, R. M.; Zhernokletov, D.

    2013-11-28

    The interfacial chemistry of thin Al (∼3 nm) and Hf (∼2 nm) metal films deposited by electron beam (e-beam) evaporation on native oxide InP (100) samples at room temperature and after annealing has been studied by in situ angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The In-oxides are completely scavenged forming In-In/In-(Al/Hf) bonding after Al and Hf metal deposition. The P-oxide concentration is significantly decreased, and the P-oxide chemical states have been changed to more P-rich oxides upon metal deposition. Indium diffusion through these metals before and after annealing at 250 °C has also been characterized. First principles calculation shows that In has lower surface formation energy compared with Al and Hf metals, which is consistent with the observed indium diffusion behavior.

  5. Expansion Discharge Source for Ion Beam Laser Spectroscopy of Cold Molecular Ions

    NASA Astrophysics Data System (ADS)

    Porambo, Michael; Pearson, Jessica; Riccardo, Craig; McCall, Benjamin J.

    2013-06-01

    Molecular ions are important in several fields of research, and spectroscopy acts as a key tool in the study of these ions. However, problems such as low ion abundance, ion-neutral confusion, and spectral congestion due to high internal temperatures can hinder effective spectroscopic studies. To circumvent these problems, we are developing a technique called Sensitive, Cooled, Resolved, Ion BEam Spectroscopy (SCRIBES). This ion beam spectrometer will feature a continuous supersonic expansion discharge source to produce cold molecular ions, electrostatic ion optics to focus the ions into an ion beam and bend the beam away from co-produced neutral molecules, an overlap region for cavity enhanced spectroscopy, and a time-of-flight mass spectrometer. When completed, SCRIBES will be an effective tool for the study of large, fluxional, and complex molecular ions that are difficult to study with other means. The ion beam spectrometer has been successfully implemented with a hot ion source. This talk will focus on the work of integrating a supersonic expansion discharge source into the instrument. To better understand how the source would work in the whole ion beam instrument, characterization studies are being performed with spectroscopy of HN_2^+ in a section of the system to ascertain the rotational temperature of the ion expansion. Attempts are also underway to measure the ion current from a beam formed from the expansion. Once the source in this environment is properly understood, we will reintegrate it to the rest of the ion beam system, completing SCRIBES. A. A. Mills, B. M. Siller, M. W. Porambo, M. Perera, H. Kreckel and B. J. McCall J. Chem. Phys., 135, 224201, (2011). K. N. Crabtree, C. A. Kauffman and B. J. McCall Rev. Sci. Instrum. 81, 086103, (2010).

  6. Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

    SciTech Connect

    Hirama, Kazuyuki Taniyasu, Yoshitaka; Karimoto, Shin-ichi; Krockenberger, Yoshiharu; Yamamoto, Hideki

    2014-03-03

    We investigated the formation of cubic boron nitride (c-BN) thin films on diamond (001) and (111) substrates by ion-beam-assisted molecular beam epitaxy (MBE). The metastable c-BN (sp{sup 3}-bonded BN) phase can be epitaxially grown as a result of the interplay between competitive phase formation and selective etching. We show that a proper adjustment of acceleration voltage for N{sub 2}{sup +} and Ar{sup +} ions is a key to selectively discriminate non-sp{sup 3} BN phases. At low acceleration voltage values, the sp{sup 2}-bonded BN is dominantly formed, while at high acceleration voltages, etching dominates irrespective of the bonding characteristics of BN.

  7. Electron beam source molecular beam epitaxial growth of analog graded Al(x)Ga(1-x)As ballistic transistors

    NASA Technical Reports Server (NTRS)

    Malik, Roger J.; Levi, Anthony F. J.

    1988-01-01

    A new method has been developed for the growth of graded band-gap Al(x)Ga(1-x)As alloys by molecular beam epitaxy which is based upon electron beam evaporation of the group III elements. The metal fluxes are measured and feedback controlled using a modulated ion gauge sensor. The system is computer controlled which allows precise programming of the Ga and Al evaporation rates. The large dynamic response of the metal sources enables growth of variable band-gap III-V alloys with arbitrary composition profiles. This new technique is demonstrated by synthesis of analog graded Al(x)Ga(1-x)As unipolar ballistic electron transistors.

  8. Method for Simulating the Thickness Distribution of a Cubic Boron Nitride Film Deposited on a Curved Substrate using Ion-beam-assisted Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Kobayashi, T.; Valizadeh, R.; Colligon, J. S.; Kanematsu, H.; Morisato, K.

    A method for simulating the thickness distribution of cubic boron nitride (cBN) films deposited on a curved substrate using ion-beam-assisted vapor deposition (IBAD) is established and discussed. The deposition conditions are (i) boron arriving rate is 3.2 Å/s, (ii) ion current density is in the range 600-1600 μA/cm2, and (iii) gas composition fed into the ion source is 36% N2 + Ar. It was found that, due to simultaneous deposition and sputtering, the boron resputtering yield (which depends on the ion incident angle during cBN deposition) estimated from experimental data was higher than that of the boron sputtering yield of the BN films with a density of 3.482 g/cm3 calculated by the TRIM code. Using the above empirical boron resputtering yield, it is estimated that in the case of static coating, cBN films would not be formed when the incident angle is more than 40°. However, with continuous waving, the distribution of film thickness improves and the results are consistent with the experimental results. This estimation also agrees with the experimental results of discrete waving deposition within an allowable margin of error

  9. Electrical and morphological properties of CdTe films synthesized by the method of molecular deposition

    SciTech Connect

    Mayorov, V. A. Yafaysov, A. M.; Bogevolnov, V. B.; Radanstev, V. F.

    2010-05-15

    Films of cadmium telluride are synthesized by molecular deposition on the substrates made of graphite, mica, and Si. Homogeneous photosensitive layers with the area 65 cm{sup 2} and thickness from 0.5 to 5 {mu}m and hole concentration of 6.3 x 10{sup 16} cm{sup -3} (300 K) are obtained.

  10. Low-Volatility Model Demonstrates Humidity Affects Environmental Toxin Deposition on Plastics at a Molecular Level.

    PubMed

    Hankett, Jeanne M; Collin, William R; Yang, Pei; Chen, Zhan; Duhaime, Melissa

    2016-02-01

    Despite the ever-increasing prevalence of plastic debris and endocrine disrupting toxins in aquatic ecosystems, few studies describe their interactions in freshwater environments. We present a model system to investigate the deposition/desorption behaviors of low-volatility lake ecosystem toxins on microplastics in situ and in real time. Molecular interactions of gas-phase nonylphenols (NPs) with the surfaces of two common plastics, poly(styrene) and poly(ethylene terephthalate), were studied using quartz crystal microbalance and sum frequency generation vibrational spectroscopy. NP point sources were generated under two model environments: plastic on land and plastic on a freshwater surface. We found the headspace above calm water provides an excellent environment for NP deposition and demonstrate significant NP deposition on plastic within minutes at relevant concentrations. Further, NP deposits and orders differently on both plastics under humid versus dry environments. We attributed the unique deposition behaviors to surface energy changes from increased water content during the humid deposition. Lastly, nanograms of NP remained on microplastic surfaces hours after initial NP introduction and agitating conditions, illustrating feasibility for plastic-bound NPs to interact with biota and surrounding matter. Our model studies reveal important interactions between low-volatility environmental toxins and microplastics and hold potential to correlate the environmental fate of endocrine disrupting toxins in the Great Lakes with molecular behaviors.

  11. Depositions of molecular nanomagnets on graphene investigated with atomic force microscopy and Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Walker, Sean; Vojvodin, Cameron; Li, Zhi; Willick, Kyle; Tang, Xiaowu (Shirley); Baugh, Jonathan

    Molecular nanomagnets display interesting quantum phenomena, and have been proposed as potential building blocks in a variety of nanoelectronic devices with applications to both quantum memory and quantum information processing. These devices often require deposition of the molecules either sparsely (e.g. for single molecule devices) or as a thin-film. Consequently, in order for these devices to be successfully realized, the nature of the interactions between nanomagnets and the surfaces on which they may be deposited needs to be understood. We have investigated the depositions of molecular nanomagnets on graphene using atomic force microscopy and Raman spectrocopy. The nanomagnets contained a range of chemical functional groups including long alkyl chains and extended π-systems of electrons. By comparing their binding affinities we learn about the nature of the interactions between the different functional groups and the graphene.

  12. High-purity 3D nano-objects grown by focused-electron-beam induced deposition

    NASA Astrophysics Data System (ADS)

    Córdoba, Rosa; Sharma, Nidhi; Kölling, Sebastian; Koenraad, Paul M.; Koopmans, Bert

    2016-09-01

    To increase the efficiency of current electronics, a specific challenge for the next generation of memory, sensing and logic devices is to find suitable strategies to move from two- to three-dimensional (3D) architectures. However, the creation of real 3D nano-objects is not trivial. Emerging non-conventional nanofabrication tools are required for this purpose. One attractive method is focused-electron-beam induced deposition (FEBID), a direct-write process of 3D nano-objects. Here, we grow 3D iron and cobalt nanopillars by FEBID using diiron nonacarbonyl Fe2(CO)9, and dicobalt octacarbonyl Co2(CO)8, respectively, as starting materials. In addition, we systematically study the composition of these nanopillars at the sub-nanometer scale by atom probe tomography, explicitly mapping the homogeneity of the radial and longitudinal composition distributions. We show a way of fabricating high-purity 3D vertical nanostructures of ∼50 nm in diameter and a few micrometers in length. Our results suggest that the purity of such 3D nanoelements (above 90 at% Fe and above 95 at% Co) is directly linked to their growth regime, in which the selected deposition conditions are crucial for the final quality of the nanostructure. Moreover, we demonstrate that FEBID and the proposed characterization technique not only allow for growth and chemical analysis of single-element structures, but also offers a new way to directly study 3D core–shell architectures. This straightforward concept could establish a promising route to the design of 3D elements for future nano-electronic devices.

  13. High-purity 3D nano-objects grown by focused-electron-beam induced deposition

    NASA Astrophysics Data System (ADS)

    Córdoba, Rosa; Sharma, Nidhi; Kölling, Sebastian; Koenraad, Paul M.; Koopmans, Bert

    2016-09-01

    To increase the efficiency of current electronics, a specific challenge for the next generation of memory, sensing and logic devices is to find suitable strategies to move from two- to three-dimensional (3D) architectures. However, the creation of real 3D nano-objects is not trivial. Emerging non-conventional nanofabrication tools are required for this purpose. One attractive method is focused-electron-beam induced deposition (FEBID), a direct-write process of 3D nano-objects. Here, we grow 3D iron and cobalt nanopillars by FEBID using diiron nonacarbonyl Fe2(CO)9, and dicobalt octacarbonyl Co2(CO)8, respectively, as starting materials. In addition, we systematically study the composition of these nanopillars at the sub-nanometer scale by atom probe tomography, explicitly mapping the homogeneity of the radial and longitudinal composition distributions. We show a way of fabricating high-purity 3D vertical nanostructures of ˜50 nm in diameter and a few micrometers in length. Our results suggest that the purity of such 3D nanoelements (above 90 at% Fe and above 95 at% Co) is directly linked to their growth regime, in which the selected deposition conditions are crucial for the final quality of the nanostructure. Moreover, we demonstrate that FEBID and the proposed characterization technique not only allow for growth and chemical analysis of single-element structures, but also offers a new way to directly study 3D core-shell architectures. This straightforward concept could establish a promising route to the design of 3D elements for future nano-electronic devices.

  14. Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

    NASA Astrophysics Data System (ADS)

    Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; Pinchuk, Igor V.; Zhu, Tiancong; Beechem, Thomas; Kawakami, Roland K.

    2016-08-01

    We report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Transport measurements of exfoliated graphene after SrO deposition show a strong dependence between the Dirac point and Sr oxidation. Subsequently, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

  15. Growth of CdTe on Si(100) surface by ionized cluster beam technique: Experimental and molecular dynamics simulation

    NASA Astrophysics Data System (ADS)

    Araghi, Houshang; Zabihi, Zabiholah; Nayebi, Payman; Ehsani, Mohammad Mahdi

    2016-10-01

    II-VI semiconductor CdTe was grown on the Si(100) substrate surface by the ionized cluster beam (ICB) technique. In the ICB method, when vapors of solid materials such as CdTe were ejected through a nozzle of a heated crucible into a vacuum region, nanoclusters were created by an adiabatic expansion phenomenon. The clusters thus obtained were partially ionized by electron bombardment and then accelerated onto the silicon substrate at 473 K by high potentials. The cluster size was determined using a retarding field energy analyzer. The results of X-ray diffraction measurements indicate the cubic zinc blende (ZB) crystalline structure of the CdTe thin film on the silicon substrate. The CdTe thin film prepared by the ICB method had high crystalline quality. The microscopic processes involved in the ICB deposition technique, such as impact and coalescence processes, have been studied in detail by molecular dynamics (MD) simulation.

  16. Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

    SciTech Connect

    Chan, J.; Fu, T.; Cheung, N.W.; Ross, J.; Newman, N.; Rubin, M.

    1993-04-01

    Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an A1 target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 C, while the crystallinity of AlN/(0001) A1{sub 2}O{sub 3} samples improved from 700 to 850 C. The optical absorption characteristics of the AlN/(0001) A1{sub 2}O{sub 3} films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

  17. GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Tseng, H. Y.; Yang, W. C.; Lee, P. Y.; Lin, C. W.; Cheng, Kai-Yuan; Hsieh, K. C.; Cheng, K. Y.; Hsu, C.-H.

    2016-08-01

    GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements.

  18. High Growth Rate Metal-Organic Molecular Beam Epitaxy for the Fabrication of GaAs Space Solar Cells

    NASA Technical Reports Server (NTRS)

    Freundlich, A.; Newman, F.; Monier, C.; Street, S.; Dargan, P.; Levy, M.

    2005-01-01

    In this work it is shown that high quality GaAs photovoltaic devices can be produced by Molecular Beam Epitaxy (MBE) with growth rates comparable to metal-organic chemical vapor deposition (MOCVD) through the subsitution of group III solid sources by metal-organic compounds. The influence the III/V flux-ratio and growth temperatures in maintaining a two dimensional layer by layer growth mode and achieving high growth rates with low residual background impurities is investigated. Finally subsequent to the study of the optimization of n- and p doping of such high growth rate epilayers, results from a preliminary attempt in the fabrication of GaAs photovoltaic devices such as tunnel diodes and solar cells using the proposed high growth rate approach are reported.

  19. Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

    DOE PAGESBeta

    Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; Pinchuk, Igor V.; Zhu, Tiancong; Beechem, Thomas; Kawakami, Roland K.

    2016-04-27

    Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

  20. Low-relaxation spin waves in laser-molecular-beam epitaxy grown nanosized yttrium iron garnet films

    NASA Astrophysics Data System (ADS)

    Lutsev, L. V.; Korovin, A. M.; Bursian, V. E.; Gastev, S. V.; Fedorov, V. V.; Suturin, S. M.; Sokolov, N. S.

    2016-05-01

    Synthesis of nanosized yttrium iron garnet (Y3Fe5O12, YIG) films followed by the study of ferromagnetic resonance (FMR) and spin wave propagation in these films is reported. The YIG films were grown on gadolinium gallium garnet substrates by laser molecular beam epitaxy. It has been shown that spin waves propagating in YIG deposited at 700 °C have low damping. At the frequency of 3.29 GHz, the spin-wave damping parameter is less than 3.6 × 10-5. Magnetic inhomogeneities of the YIG films give the main contribution to the FMR linewidth. The contribution of the relaxation processes to the FMR linewidth is as low as 1.2%.

  1. Collision dynamics of methyl radicals and highly vibrationally excited molecules using crossed molecular beams

    SciTech Connect

    Chu, P.M.Y.

    1991-10-01

    The vibrational to translational (V{yields}T) energy transfer in collisions between large highly vibrationally excited polyatomics and rare gases was investigated by time-of-flight techniques. Two different methods, UV excitation followed by intemal conversion and infrared multiphoton excitation (IRMPE), were used to form vibrationally excited molecular beams of hexafluorobenzene and sulfur hexafluoride, respectively. The product translational energy was found to be independent of the vibrational excitation. These results indicate that the probability distribution function for V{yields}T energy transfer is peaked at zero. The collisional relaxation of large polyatomic molecules with rare gases most likely occurs through a rotationally mediated process. Photodissociation of nitrobenzene in a molecular beam was studied at 266 nm. Two primary dissociation channels were identified including simple bond rupture to produce nitrogen dioxide and phenyl radical and isomerization to form nitric oxide and phenoxy radical. The time-of-flight spectra indicate that simple bond rupture and isomerization occurs via two different mechanisms. Secondary dissociation of the phenoxy radicals to carbon monoxide and cyclopentadienyl radicals was observed as well as secondary photodissociation of phenyl radical to give H atom and benzyne. A supersonic methyl radical beam source is developed. The beam source configuration and conditions were optimized for CH{sub 3} production from the thermal decomposition of azomethane. Elastic scattering of methyl radical and neon was used to differentiate between the methyl radicals and the residual azomethane in the molecular beam.

  2. Developer molecular size dependence of pattern formation of polymer type electron beam resists with various molecular weights

    NASA Astrophysics Data System (ADS)

    Takayama, Tomohiro; Asada, Hironori; Kishimura, Yukiko; Ochiai, Shunsuke; Hoshino, Ryoichi; Kawata, Atsushi

    2016-05-01

    The sensitivity and the resolution are affected by not only the nature of the resist such as a chemical structure and a molecular weight but also the developing process such as a developer molecular size. Exposure characteristics of positive-tone polymer resists having various molecular weights (Mw's) ranging from 60 k to 500 k are investigated using different ester solvents as a developer. The line-and-space (L/S) patterns are exposed by the electron beam writing system with an acceleration voltage of 50 kV and the samples are developed by amyl acetate, hexyl acetate and heptyl acetate. The pattern shape becomes better and the surface of the resist also becomes smoother with increasing developer molecular size, though the exposure dose required for the formation of the L/S pattern increases. The dose margin of pattern formation is also wider in all the resists having the different molecular weights. The dissolution in the unexposed portions of the 60k-Mw resist for heptyl acetate is reduced significantly compared with those for amyl acetate and hexyl acetate. The improvement of the pattern shape and the increasing of dose margin are remarkable in the low molecular weight resist. The 3σ of line width roughness tends to be smaller in the higher molecular weight resist and with the larger molecular size developer. Exposure experiment of the 35 nm pitch pattern using the 500k-Mw resist developed at the room temperature is presented.

  3. Ion Flux Measurements in Electron Beam Produced Plasmas in Atomic and Molecular Gases

    NASA Astrophysics Data System (ADS)

    Walton, S. G.; Leonhardt, D.; Blackwell, D. D.; Murphy, D. P.; Fernsler, R. F.; Meger, R. A.

    2001-10-01

    In this presentation, mass- and time-resolved measurements of ion fluxes sampled from pulsed, electron beam-generated plasmas will be discussed. Previous works have shown that energetic electron beams are efficient at producing high-density plasmas (10^10-10^12 cm-3) with low electron temperatures (Te < 1.0 eV) over the volume of the beam. Outside the beam, the plasma density and electron temperature vary due, in part, to ion-neutral and electron-ion interactions. In molecular gases, electron-ion recombination plays a significant role while in atomic gases, ion-neutral interactions are important. These interactions also determine the temporal variations in the electron temperature and plasma density when the electron beam is pulsed. Temporally resolved ion flux and energy distributions at a grounded electrode surface located adjacent to pulsed plasmas in pure Ar, N_2, O_2, and their mixtures are discussed. Measurements are presented as a function of operating pressure, mixture ratio, and electron beam-electrode separation. The differences in the results for atomic and molecular gases will also be discussed and related to their respective gas-phase kinetics.

  4. Crossed Molecular Beam Studies and Dynamics of Decomposition of Chemically Activated Radicals

    DOE R&D Accomplishments Database

    Lee, Y. T.

    1973-09-01

    The power of the crossed molecular beams method in the investigation of the dynamics of chemical reactions lies mainly in the direct observation of the consequences of single collisions of well controlled reactant molecules. The primary experimental observations which provide information on reaction dynamics are the measurements of angular and velocity distributions of reaction products.

  5. Pulsed supersonic molecular-beam coherent anti-Stokes Raman spectroscopy of C2H2

    NASA Technical Reports Server (NTRS)

    Duncan, M. D.; Byer, R. L.; Osterlin, P.

    1981-01-01

    A high-resolution coherent anti-Stokes Raman spectrum of C2H2 in a pulsed molecular beam was obtained and the resolved Q-branch spectrum was used to study the properties of the expansion. Cluster formation limited the minimum observed rotational temperature in the pure-acetylene expansion to 30 K.

  6. Growth of (111) GaAs on (111) Si using molecular-beam epitaxy

    NASA Technical Reports Server (NTRS)

    Radhakrishnan, G.; Liu, J.; Grunthaner, F.; Katz, J.; Morkoc, H.

    1988-01-01

    (111) GaAs layers have been grown epitaxially on (111) Si wafers, both on-axis as well as 3-deg off-axis towards the 1 -1 0 direction, using molecular-beam epitaxy. The grown layers have been characterized by scanning electron microscopy, X-ray diffraction, and transmission electron microscopy.

  7. History of Molecular Beam Research: Personal Reminiscences of the Important Evolutionary Period 1919-1933

    ERIC Educational Resources Information Center

    Estermann, Immanuel

    1975-01-01

    Describes the early historical period of the molecular beam method, including the Stern-Gerlach experiment, the work of Davisson and Germer, and the magnetic moment determinations for the proton, neutron, and deuteron. Contains some amusing historical sidelights on the research personalities that dominated that period. (MLH)

  8. In/ITO whisker and optoelectronic properties of ITO films deposited by ion beam sputtering

    SciTech Connect

    Shen, Jung-Hsiung; Yeh, Sung-Wei; Teoh, Lay Gaik

    2012-07-15

    ITO films were deposited on a glass substrate using ion beam sputtering, with oxygen flow rates from 0.5 to 2 sccm. The films consisted of randomly oriented ITO nanoparticles and metallic indium (In) with {l_brace}101{r_brace} facets, following the specific crystallographic relationship of [010]{sub In}//[110]{sub ITO}; (001){sub In}//(001){sub ITO} with habit planes (100){sub In}//(011){sub ITO}, when fabricated using a low oxygen flow rate. Oxygen flow rate in excess of 2.0 sccm results in the growth of amorphous films. The epitaxial In nanoparticles probably act as seeds for the development of curved ITO whiskers as small as 10 nm and extend up to 100 nm in length along the [100] direction, with poorly defined shape, possibly due to the tapering and bending of the whisker to form a tilt boundary about the [011] zone axis of the ITO. The ITO whisker growth was facilitated by the In globular tips in the vapor-liquid-solid growth mechanism. The films prepared using a series of oxygen flow rates showed different chemical-bonding states, electric resistivity and optical transparency; as a result of phase and microstructural changes.

  9. Investigation of Mn-implanted n-Si by low-energy ion beam deposition

    NASA Astrophysics Data System (ADS)

    Liu, Lifeng; Chen, Nuofu; Song, Shulin; Yin, Zhigang; Yang, Fei; Chai, Chunlin; Yang, Shaoyan; Liu, Zhikai

    2005-01-01

    Mn ions were implanted to n-type Si(0 0 1) single crystal by low-energy ion beam deposition technique with an energy of 1000 eV and a dose of 7.5×10 17 cm -2. The samples were held at room temperature and at 300 °C during implantation. Auger electron spectroscopy depth profiles of samples indicate that the Mn ions reach deeper in the sample implanted at 300 °C than in the sample implanted at room temperature. X-ray diffraction measurements show that the structure of the sample implanted at room temperature is amorphous while that of the sample implanted at 300 °C is crystallized. There are no new phases found except silicon both in the two samples. Atomic force microscopy images of samples indicate that the sample implanted at 300 °C has island-like humps that cover the sample surface while there is no such kind of characteristic in the sample implanted at room temperature. The magnetic properties of samples were investigated by alternating gradient magnetometer (AGM). The sample implanted at 300 °C shows ferromagnetic behavior at room temperature.

  10. Tribological coatings for complex mechanical elements produced by supersonic cluster beam deposition of metal dichalcogenide nanoparticles

    NASA Astrophysics Data System (ADS)

    Piazzoni, C.; Buttery, M.; Hampson, M. R.; Roberts, E. W.; Ducati, C.; Lenardi, C.; Cavaliere, F.; Piseri, P.; Milani, P.

    2015-07-01

    Fullerene-like MoS2 and WS2 nanoparticles can be used as building blocks for the fabrication of fluid and solid lubricants. Metal dichalcogenide films have a very low friction coefficient in vacuum, therefore they have mostly been used as solid lubricants in space and vacuum applications. Unfortunately, their use is significantly hampered by the fact that in the presence of humidity, oxygen and moisture, the low-friction properties of these materials rapidly degrade due to oxidation. The use of closed-cage MoS2 and WS2 nanoparticles may eliminate this problem, although the fabrication of lubricant thin films starting from dichalcogenide nanoparticles is, to date, a difficult task. Here we demonstrate the use of supersonic cluster beam deposition for the coating of complex mechanical elements (angular contact ball bearings) with nanostructured MoS2 and WS2 thin films. We report structural and tribological characterization of the coatings in view of the optimization of tribological performances for aerospace applications.

  11. Features of the film-growth conditions by cross-beam pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Tselev, A.; Gorbunov, A.; Pompe, W.

    Spatial and energetic characteristics of the plasma plume by cross-beam pulsed-laser deposition (CBPLD) were investigated. Effective droplets filtering together with high efficiency of material usage are observed by this approach. Time-of-flight (TOF) technique with electrostatic ion collectors (Langmuir probes operating in the ion-collecting mode) were applied to obtain kinetic energy distribution functions of ionized particles and to compare the ionization degrees of the plasma by the CBPLD and by the conventional PLD. The average and maximum kinetic energies of the ions by the CBPLD are found to be 2-3 times lower as compared to the conventional PLD. At the same time, the fraction of ionized species and highly exited neutrals (Rydberg atoms) in the CBPLD plasma is 1.5-2 times larger in comparison to the conventional approach. Re-sputtering of the material of the growing film by fast ions is a considerable effect in both the PLD methods by the chosen experimental conditions. The angular width of the directional pattern of the plasma plume by CBPLD is comparable to that typical for the conventional PLD.

  12. Molecular Beam Optical Zeeman Spectroscopy of Vanadium Monoxide, VO

    NASA Astrophysics Data System (ADS)

    Nguyen, Trung; Zhang, Ruohan; Steimle, Timothy

    2016-06-01

    Like almost all astronomical studies, exoplanet investigations are observational endeavors that rely primarily on remote spectroscopic sensing to infer the physical properties of planets. Most exoplanet related information is inferred from to temporal variation of luminosity of the parent star. An effective method of monitoring this variation is via Magnetic Doppler Imaging (MDI), which uses optical polarimetry of paramagnetic molecules or atoms. One promising paramagnetic stellar absorption is the near infrared spectrum of VO. With this in mind, we have begun a project to record and analyze the field-free and Zeeman spectrum of the band. A cold (approx. 20 K) beam of VO was probed with a single frequency laser and detected using laser induced fluorescence. The determined spectral parameters will be discussed and compared to those extracted from the analysis of a hot spectrum. Supported by the National Science Foundation under the Grant No. CHE-1265885. O. Kochukhov, N. Rusomarov, J. A. Valenti, H. C. Stempels, F. Snik, M. Rodenhuis, N. Piskunov, V. Makaganiuk, C. U. Keller and C. M. Johns-Krull, Astron. Astrophys. 574 (Pt. 2), A79/71-A79/12 (2015). S. V. Berdyugina, Astron. Soc. Pac. Conf. Ser. 437 (Solar Polarization 6), 219-235 (2011). S. V. Berdyugina, P. A. Braun, D. M. Fluri and S. K. Solanki, Astron. Astrophys. 444 (3), 947-960 (2005). A. S. C. Cheung, P. G. Hajigeorgiou, G. Huang, S. Z. Huang and A. J. Merer, J. Mol. Spectrosc. 163 (2), 443-458 (1994)

  13. Ultra-sensitive high-precision spectroscopy of a fast molecular ion beam.

    PubMed

    Mills, Andrew A; Siller, Brian M; Porambo, Michael W; Perera, Manori; Kreckel, Holger; McCall, Benjamin J

    2011-12-14

    Direct spectroscopy of a fast molecular ion beam offers many advantages over competing techniques, including the generality of the approach to any molecular ion, the complete elimination of spectral confusion due to neutral molecules, and the mass identification of individual spectral lines. The major challenge is the intrinsic weakness of absorption or dispersion signals resulting from the relatively low number density of ions in the beam. Direct spectroscopy of an ion beam was pioneered by Saykally and co-workers in the late 1980s, but has not been attempted since that time. Here, we present the design and construction of an ion beam spectrometer with several improvements over the Saykally design. The ion beam and its characterization have been improved by adopting recent advances in electrostatic optics, along with a time-of-flight mass spectrometer that can be used simultaneously with optical spectroscopy. As a proof of concept, a noise-immune cavity-enhanced optical heterodyne molecular spectroscopy (NICE-OHMS) setup with a noise equivalent absorption of ~2 × 10(-11) cm(-1) Hz(-1/2) has been used to observe several transitions of the Meinel 1-0 band of N(2) (+) with linewidths of ~120 MHz. An optical frequency comb has been used for absolute frequency calibration of transition frequencies to within ~8 MHz. This work represents the first direct spectroscopy of an electronic transition in an ion beam, and also represents a major step toward the development of routine infrared spectroscopy of rotationally cooled molecular ions. PMID:22168687

  14. Ultra-sensitive high-precision spectroscopy of a fast molecular ion beam

    SciTech Connect

    Mills, Andrew A.; Siller, Brian M.; Porambo, Michael W.; Perera, Manori; Kreckel, Holger; McCall, Benjamin J.

    2011-12-14

    Direct spectroscopy of a fast molecular ion beam offers many advantages over competing techniques, including the generality of the approach to any molecular ion, the complete elimination of spectral confusion due to neutral molecules, and the mass identification of individual spectral lines. The major challenge is the intrinsic weakness of absorption or dispersion signals resulting from the relatively low number density of ions in the beam. Direct spectroscopy of an ion beam was pioneered by Saykally and co-workers in the late 1980s, but has not been attempted since that time. Here, we present the design and construction of an ion beam spectrometer with several improvements over the Saykally design. The ion beam and its characterization have been improved by adopting recent advances in electrostatic optics, along with a time-of-flight mass spectrometer that can be used simultaneously with optical spectroscopy. As a proof of concept, a noise-immune cavity-enhanced optical heterodyne molecular spectroscopy (NICE-OHMS) setup with a noise equivalent absorption of {approx}2 x 10{sup -11} cm{sup -1} Hz{sup -1/2} has been used to observe several transitions of the Meinel 1-0 band of N{sub 2}{sup +} with linewidths of {approx}120 MHz. An optical frequency comb has been used for absolute frequency calibration of transition frequencies to within {approx}8 MHz. This work represents the first direct spectroscopy of an electronic transition in an ion beam, and also represents a major step toward the development of routine infrared spectroscopy of rotationally cooled molecular ions.

  15. Electron-beam nanopatterning and spectral modulation of organic molecular light-emitting single crystals.

    PubMed

    Persano, Luana; Camposeo, Andrea; Pisignano, Dario; Burini, Andrea; Spearman, Peter; Tavazzi, Silvia

    2014-02-18

    The nanopatterning of light-emitting molecular crystals with semiconducting properties can be crucial for the development of future optoelectronic and nanoelectronic devices based on organic materials. In this respect, electron-beam writing is a powerful tool to realize patterns at the nanoscale, but it is still rarely applied to active organic materials. Here, sub-100-nm-scale nanopatterning is performed on the surface of quaterthiophene monocrystals by direct maskless electron-beam writing. Gratings are produced on organic crystals with periods ranging from 80 nm to 1 μm and single-line lateral dimensions ranging from 20 to 500 nm, with electron-beam exposure doses between 100 and 1500 μC/cm(2). The morphological and texturing properties of the pattern are discussed, together with the interaction mechanisms between the electron beam and the crystal. The resulting modulation of the light emission is consistent with Bragg scattering from the patterned periodic features.

  16. In situ study of erosion and deposition of amorphous hydrogenated carbon films by exposure to a hydrogen atom beam

    SciTech Connect

    Markelj, Sabina; Pelicon, Primoz; Cadez, Iztok; Schwarz-Selinger, Thomas; Jacob, Wolfgang

    2012-07-15

    This paper reports on the first dual-beam experiment employing a hydrogen atom beam for sample exposure and an ion beam for analysis, enabling in situ and real-time studies of hydrogen atom interaction with materials. The erosion of an amorphous hydrogenated carbon (a-C:H) layer by deuterium atoms at 580 K sample temperature was studied and the uptake of deuterium during the erosion process was measured in real time. The deuterium areal density increased at the beginning to 7.3 Multiplication-Sign 10{sup 15} D cm{sup -2}, but then stabilized at a constant value of 5.5 Multiplication-Sign 10{sup 15} D cm{sup -2}. Formation of a polymer-like deposit on an a-C:H layer held at room temperature and subjected to the deuterium atom beam was observed and also studied in situ. For both erosion and deposition studies an a-{sup 13}C:H layer on top of an Si substrate was used as a sample, making the experiments isotopically fully specified and thereby differentiating the deposited from the original layer and the interacting D atoms from H atoms present in the layer and in the residual vacuum. From the deposition study it was shown that carbon in the deposited layer originates from carbon-carrying species in the background vacuum that interact with hydrogen atoms. The areal density of the carbon at the surface was determined from the energy shift of the Si edge in the Rutherford backscattering spectrum. The cross section for {sup 7}Li on D at 4.3 MeV Li ion energy and at a recoil angle of 30 Degree-Sign was also determined to be (236 {+-} 16) Multiplication-Sign 10{sup -27} cm{sup 2}/sr. This is a factor of 3 {+-} 0.2 times higher than the Rutherford elastic cross section.

  17. Microwave surface resistance of YBa 2Cu 3O 7-δ thin films deposited by pulsed organometallic beam epitaxy

    NASA Astrophysics Data System (ADS)

    DeGroot, D. C.; Hogan, T. P.; Kannewurf, C. R.; Buchholz, D. B.; Chang, R. P. H.; Gao, F.; Feng, M.; Nordin, R. A.

    1994-03-01

    The microwave surface resistance of superconducting YBa 2Cu 3O 7-δ thin films deposited by pulsed organometallic beam epitaxy (POMBE) has been characterized using the parallel plate transmission line resonator method. POMBE is an advanced organometric chemical vapor deposition technique where precursor vapors are precisely metered onto the substrate under computer control. In this study, the POMBE reactor was used to deposit epitaxial films of varying thickness onto LaAlO 3 substrates. The deposition procedure and surface-resistance results for films of varying thicknesses are described. The reduction of surface resistance achieved supports the use of the POMBE technique as a possible method for preparing device-quality high- Tc films and multi-layer structures.

  18. Si(011)16x2 gas-source molecular beam epitaxy: Growth kinetics

    SciTech Connect

    Taylor, N.; Kim, H.; Desjardins, P.; Foo, Y. L.; Greene, J. E.

    2000-05-15

    The growth rates R{sub Si} of Si layers deposited on Si(011)''16x2'' by gas-source molecular beam epitaxy from Si{sub 2}H{sub 6} were determined as a function of temperature T{sub s} (400-975 degree sign C) and Si{sub 2}H{sub 6} flux J{sub Si{sub 2}}{sub H{sub 6}}(5.0x10{sup 15}-9.0x10{sup 16} cm{sup -2} s{sup -1}). R{sub Si} ranges from 0.0015 {mu}m h-1 at T{sub s}=400 degree sign C to 0.415 {mu}m h-1 at T{sub s}=975 degree sign C with J{sub Si{sub 2}}{sub H{sub 6}}=2.2x10{sup 16} cm{sup -2} s{sup -1}. In the surface-reaction-limited regime at T{sub s}<725 degree sign C, R{sub Si} initially exhibits an exponential decrease with 1/T{sub s}, then decreases at a slower rate at T{sub s}{<=}550 degree sign C as an additional deposition pathway becomes operative. In the impingement-flux-limited regime, 725{<=}T{sub s}{<=}900 degree sign C, R{sub Si} is independent of T{sub s} but increases linearly with J{sub Si{sub 2}}{sub H{sub 6}}. At T{sub s}>900 degree sign C, R{sub Si}(T{sub s}) increases with T{sub s} due to surface roughening. Overall, R{sub Si}(J{sub Si{sub 2}}{sub H{sub 6}},T{sub s}) is well described at T{sub s}{<=}900 degree sign C by a kinetic model incorporating two competing film growth mechanisms: (1) dissociative chemisorption of Si{sub 2}H{sub 6} onto dangling bonds followed by fast surface dissociation steps and second-order H{sub 2} desorption from the surface monohydride phase; and (2) Si{sub 2}H{sub 6} insertion into Si-H surface bonds followed by second-order desorption of SiH{sub 4}. (c) 2000 American Institute of Physics.

  19. Ultra high resolution molecular beam cars spectroscopy with application to planetary atmospheric molecules

    NASA Technical Reports Server (NTRS)

    Byer, R. L.

    1982-01-01

    The measurement of high resolution pulsed and continuous wave (CW) coherent anti-Stokes Raman spectroscopy (CARS) measurements in pulsed and steady state supersonic expansions were demonstrated. Pulsed molecular beam sources were characterized, and saturation of a Raman transition and, for the first time, the Raman spectrum of a complex molecular cluster were observed. The observation of CW CARS spectra in a molecular expansion and the effects of transit time broadening is described. Supersonic expansion is established as a viable technique for high resolution Raman spectroscopy of cold molecules with resolutions of 100 MH2.

  20. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

    DOEpatents

    Brennan, Thomas M.; Hammons, B. Eugene; Tsao, Jeffrey Y.

    1992-01-01

    A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.

  1. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

    DOEpatents

    Brennan, T.M.; Hammons, B.E.; Tsao, J.Y.

    1992-12-15

    A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth. 3 figs.

  2. In-situ microscopic observation of GaAs surfaces during molecular beam epitaxy and metalorganic molecular beam epitaxy by scanning microprobe reflection high energy electron diffraction

    NASA Astrophysics Data System (ADS)

    Isu, Toshiro; Watanabe, Akiyoshi; Hata, Masayuki; Katayama, Yoshifumi

    1990-03-01

    Microscopic observations of epitaxial growth layers of GaAs were made with a scanning microprobe reflection high energy electron diffraction (RHEED). A scanning microprobe electron gun has been combined with a specially designed molecular beam epitaxy (MBE) system with both solid sources and gas sources. Scanning reflection electron microscope (SREM) images using the specular beam spot revealed granular features over the entire surfaces of MBE-grown GaAs layers, which were thought to come from undulation of the surface. Similar features of the surface were observed on the layers grown by gas-source MBE using trimethylgallium and arsine. A microscopic surface morphology was found to be fairly rough and the features depended on the species of the sources and growth conditions.

  3. Micropatterning of small molecular weight organic semiconductor thin films using organic vapor phase deposition

    NASA Astrophysics Data System (ADS)

    Shtein, Max; Peumans, Peter; Benziger, Jay B.; Forrest, Stephen R.

    2003-04-01

    Using both analytical and experimental methods, we show that micron scale patterned growth of small molecular weight organic semiconductor thin films can be achieved by the recently demonstrated process of organic vapor phase deposition (OVPD). In contrast to the conventional process of vacuum thermal evaporation, the background gas pressure during OVPD is typically 0.1-10 Torr, resulting in a molecular mean free path (mfp) of from 100 to 1 μm, respectively. Monte Carlo simulations of film growth through apertures at these gas densities indicate that when the mfp is on the order of the mask-to-substrate separation, deposit edges can become diffuse. The simulations and deposition experiments discussed here indicate that the deposited feature shape is controlled by the mfp, the aperture geometry, and the mask-to-substrate separation. Carefully selected process conditions and mask geometries can result in features as small as 1 μm. Furthermore, based on continuum and stochastic models of molecular transport in confined geometries, we propose the in situ direct patterning growth technique of organic vapor jet printing. The high pattern definition obtained by OVPD makes this process attractive for the growth of a wide range of structures employed in modern organic electronic devices.

  4. Organic and inorganic–organic thin film structures by molecular layer deposition: A review

    PubMed Central

    Sundberg, Pia

    2014-01-01

    Summary The possibility to deposit purely organic and hybrid inorganic–organic materials in a way parallel to the state-of-the-art gas-phase deposition method of inorganic thin films, i.e., atomic layer deposition (ALD), is currently experiencing a strongly growing interest. Like ALD in case of the inorganics, the emerging molecular layer deposition (MLD) technique for organic constituents can be employed to fabricate high-quality thin films and coatings with thickness and composition control on the molecular scale, even on complex three-dimensional structures. Moreover, by combining the two techniques, ALD and MLD, fundamentally new types of inorganic–organic hybrid materials can be produced. In this review article, we first describe the basic concepts regarding the MLD and ALD/MLD processes, followed by a comprehensive review of the various precursors and precursor pairs so far employed in these processes. Finally, we discuss the first proof-of-concept experiments in which the newly developed MLD and ALD/MLD processes are exploited to fabricate novel multilayer and nanostructure architectures by combining different inorganic, organic and hybrid material layers into on-demand designed mixtures, superlattices and nanolaminates, and employing new innovative nanotemplates or post-deposition treatments to, e.g., selectively decompose parts of the structure. Such layer-engineered and/or nanostructured hybrid materials with exciting combinations of functional properties hold great promise for high-end technological applications. PMID:25161845

  5. Effects of oxygen on electron beam induced deposition of SiO{sub 2} using physisorbed and chemisorbed tetraethoxysilane

    SciTech Connect

    Bishop, James; Toth, Milos; Phillips, Matthew; Lobo, Charlene

    2012-11-19

    Electron beam induced deposition (EBID) is limited by low throughput and purity of as-grown material. Co-injection of O{sub 2} with the growth precursor is known to increase both the purity and deposition rate of materials such as SiO{sub 2} at room temperature. Here, we show that O{sub 2} inhibits rather than enhances EBID from tetraethoxysilane (TEOS) precursor at elevated temperatures. This behavior is attributed to surface site competition between chemisorbates at elevated temperature, and TEOS decomposition by atomic oxygen produced through electron dissociation of physisorbed O{sub 2} at room temperature.

  6. Structure and interfacial analysis of nanoscale TiNi thin film prepared by biased target ion beam deposition

    SciTech Connect

    Hou, Huilong; Hamilton, Reginald F. Horn, Mark W.

    2015-07-15

    Ultrathin, 65 nm thick, TiNi alloy films were fabricated by cosputtering Ti and Ni targets using the recently developed biased target ion beam deposition technique. Preheating the substrate by exposure to a low energy ion source resulted in as-deposited films with a pure B2 atomic crystal structure containing no secondary crystal structures or precipitates. Continuous films were produced with a smooth surface and minimal substrate/film interfacial diffusion. The diffusion layer was a small ratio of film thickness, which is a prerequisite for the B2 phase to undergo the martensitic transformation in ultrathin films.

  7. TEM sample preparation using a new nanofabrication technique combining electron-beam-induced deposition and low-energy ion milling.

    PubMed

    Mitsuishi, Kazutaka; Shimojo, Masayuki; Tanaka, Miyoko; Takeguchi, Masaki; Song, Minghui; Furuya, Kazuo

    2006-12-01

    A new TEM sample preparation technique using electron-beam-induced deposition combined with low-energy ion milling was used to fabricate for two different shapes of sample, conical and plate. High-quality HREM images can be obtained from samples prepared by this technique. A desired sample position can be obtained with high accuracy, and the total sample preparation time can be much less than conventional techniques. Because the gas deposition system used can easily be integrated in a conventional SEM, the method can be performed in any laboratory equipped with a SEM and an ion milling machine.

  8. Molecular beam optical Stark study of rhodium mononitride.

    PubMed

    Ma, Tongmei; Gengler, Jamie; Wang, Zhong; Wang, Hailing; Steimle, Timothy C

    2007-06-28

    The optical Stark effect in the Q(1) and R(0) lines of the [15.1]1-X (1)Sigma+ (1,0) band of rhodium mononitride (RhN) were recorded and analyzed to determine the permanent electric dipole moments mu for the X (1)Sigma+(upsilon=0) and [15.1]1(upsilon=1) states to be 2.43(5) and 1.75(1) D, respectively. The determined dipole moments are compared to predicted values obtained from density functional theory [Stevens et al., Chem. Phys. Lett. 421, 281 (2006)] and an all-electron ab initio calculation [Shim et al., J. Mol. Struct. THEOCHEM 393, 127 (1997)]. A simple single configuration molecular orbital correlation diagram is used to rationalize the relative values of mu for the 4d mononitrides and RhO. An electronic configuration for the [15.1]1 state is proposed based on the interpretation of the (103)Rh and (14)N magnetic hyperfine interactions.

  9. Improved electron ionization ion source for the detection of supersonic molecular beams

    NASA Astrophysics Data System (ADS)

    Amirav, Aviv; Fialkov, Alexander; Gordin, Alexander

    2002-08-01

    An improved electron ionization (EI) ion source is described, based on the modification of a Brink-type EI ion source through the addition of a second cage with a fine mesh outside the ion chamber. The added outer cage shields the inner ion cage (ionization zone) against the penetration of the filament and electron repeller potentials, and thus results in the provision of ions with narrower ion energy distribution, hence improved ion-beam quality. The closer to zero electrical field inside the ion cage enables improved filtration (rejection) of ions that are produced from vacuum background compounds, based on difference in ion energies of beam and background species. The improved background ion filtration and ion-beam quality resulted in 2.6 times higher mass spectrometric ion signal, combined with 6.4 times better signal to noise ratio, in comparison with the same ion source having a single cage. The dual cage ion source further provides a smaller or no reduction of the electron emission current upon lowering the electron energy for achieving softer EI and/or electron attachment ionization. It also improves the long-term mass spectral and signal reproducibility and enables fast, automated change of the electron energy. Consequently, the dual cage EI ion source is especially effective for use with gas chromatography mass spectrometry with supersonic molecular beams (SMB), liquid chromatography mass spectrometry with SMB, ion guns with SMB, and any other experimental systems with SMB or nonthermal molecular beams.

  10. Molecular Beam Optical Study of Gold Sulfide and Gold Oxide

    NASA Astrophysics Data System (ADS)

    Zhang, Ruohan; Yu, Yuanqin; Steimle, Timothy

    2016-06-01

    Gold-sulfur and gold-oxygen bonds are key components to numerous established and emerging technologies that have applications as far ranging as medical imaging, catalysis, electronics, and material science. A major theoretical challenge for describing this bonding is correctly accounting for the large relativistic and electron correlation effects. Such effects are best studied in diatomic, AuX, molecules. Recently, the observed AuS electronic state energy ordering was measured and compared to a simple molecular orbital diagram prediction. Here we more thoroughly investigate the nature of the electronic states of both AuS and AuO from the analysis of high-resolution (FWHM\\cong35MHz) optical Zeeman spectroscopy of the (0,0){B}2Σ--{X}2Π3/2 bands. The determined fine and hyperfine parameters for the {B}2Σ- state of AuO differ from those extracted from the analysis of a hot, Doppler-limited, spectrum. It is demonstrated that the nature of the {B}2Σ- states of AuO and AuS are radically different. The magnetic tuning of AuO and AuS indicates that the {B}2Σ- states are heavily contaminated. Supported by the National Science Foundation under Grant No.1265885. D. L. Kokkin, R. Zhang, T. C. Steimle, I. A. Wyse, B. W. Pearlman and T. D. Varberg, J. Phys. Chem. A., 119(48), 4412, 2015. L. C. O'Brien, B. A. Borchert, A. Farquhar, S. Shaji, J. J. O'Brien and R. W. Field, J. Mol. Spectrosc., 252(2), 136, 2008

  11. Three-dimensional imaging of the ultracold plasma formed in a supersonic molecular beam

    SciTech Connect

    Schulz-Weiling, Markus; Grant, Edward

    2015-06-29

    Double-resonant excitation of nitric oxide in a seeded supersonic molecular beam forms a state-selected Rydberg gas that evolves to form an ultracold plasma. This plasma travels with the propagation of the molecular beam in z over a variable distance as great as 600 mm to strike an imaging detector, which records the charge distribution in the dimensions, x and y. The ω{sub 1} + ω{sub 2} laser crossed molecular beam excitation geometry convolutes the axial Gaussian distribution of NO in the molecular beam with the Gaussian intensity distribution of the perpendicularly aligned laser beam to create an ellipsoidal volume of Rydberg gas. Detected images describe the evolution of this initial density as a function of selected Rydberg gas initial principal quantum number, n{sub 0}, ω{sub 1} laser pulse energy (linearly related to Rydberg gas density, ρ{sub 0}) and flight time. Low-density Rydberg gases of lower principal quantum number produce uniformly expanding, ellipsoidal charge-density distributions. Increase either of n{sub 0} or ρ{sub 0} breaks the ellipsoidal symmetry of plasma expansion. The volume bifurcates to form repelling plasma volumes. The velocity of separation depends on n{sub 0} and ρ{sub 0} in a way that scales uniformly with ρ{sub e}, the density of electrons formed in the core of the Rydberg gas by prompt Penning ionization. Conditions under which this electron gas drives expansion in the long axis dimension of the ellipsoid favours the formation of counter-propagating shock waves.

  12. Pulsed supersonic molecular beam for characterization of chemically active metal-organic complexes at surfaces

    NASA Astrophysics Data System (ADS)

    Lear, Amanda M.

    Metal-organic coordination networks (MOCNs) at surfaces consist of a complex of organic ligands bound to an atomic metal center. The MOCNs, when chosen appropriately, can form highly-ordered arrays at surfaces. Ultra-high vacuum surface studies allow control of surface composition and provide 2D growth restrictions, which lead to under-coordinated metal centers. These systems provide an opportunity to tailor the chemical function of the metal centers due to the steric restrictions imposed by the surface. Tuning the adsorption/desorption energy at a metal center and developing a cooperative environment for catalysis are the key scientific questions that motivate the construction of a molecular beam surface analysis system. Characterization of the created systems can be performed utilizing a pulsed supersonic molecular beam (PSMB) in unison with a quadrupole mass spectrometer. A PSMB allows for the highly controlled delivery of reactants with well-defined energy to a given platform making it possible to elucidate detailed chemical tuning information. In this thesis, a summary of prior theoretical molecular beam derivations is provided. Design considerations and an overview of the construction procedure for the current molecular beam apparatus, including initial characterization experiments, are presented. By impinging an Ar beam on a Ag(111) surface, the location of the specular angle (˜65°) and rough sample perimeter coordinates were determined. Additionally, surface analysis experiments, mainly Auger Electron Spectroscopy (AES), were performed to investigate the oxidation of epitaxial graphene on the SiC(0001) surface utilizing an oxygen cracking method. The AES experiments are described in detail and highlight the challenges that were faced when several different graphene samples were used for the oxygen adsorption/desorption experiments.

  13. Synthesis of Large-Sized Single-Crystal Hexagonal Boron Nitride Domains on Nickel Foils by Ion Beam Sputtering Deposition.

    PubMed

    Wang, Haolin; Zhang, Xingwang; Liu, Heng; Yin, Zhigang; Meng, Junhua; Xia, Jing; Meng, Xiang-Min; Wu, Jinliang; You, Jingbi

    2015-12-22

    Large-sized single-crystal h-BN domains with a lateral size up to 100 μm are synthesized on Ni foils by ion-beam sputtering deposition. The nucleation density of h-BN is dramatically decreased by reducing the concentrations of both active sites and species on the Ni surface through a brief in situ pretreatment of the substrate and optimization of the growth parameters, enabling the growth of large-sized domains.

  14. HgTe-CdTe-InSb heterostructures by molecular beam epitaxy

    SciTech Connect

    Ballingall, J.M.; Leopold, D.J.; Peterman, D.J.

    1985-08-01

    HgTe-CdTe heterostructures have been grown by molecular beam epitaxy on (100) InSb substrates. Separate elemental Hg and Te beams were used for the HgTe growth at a substrate temperature of 160 C. X-ray diffraction measurements indicate that thin epitaxial layers are of high crystalline quality. Secondary-ion mass spectroscopy measurements show substantial In and Sb diffusion into the epitaxial layers with a concentration enhancement at the HgTe-CdTe interface. 9 references.

  15. Proposed Molecular Beam Determination of Energy Partition in the Photodissociation of Polyatomic Molecules

    DOE R&D Accomplishments Database

    Zare, P. N.; Herschbach, D. R.

    1964-01-29

    Conventional photochemical experiments give no information about the partitioning of energy between translational recoil and internal excitation of the fragment molecules formed in photodissociation of a polyatomic molecule. In a molecular beam experiment, it becomes possible to determine the energy partition from the form of the laboratory angular distribution of one of the photodissociation products. A general kinematic analysis is worked out in detail, and the uncertainty introduced by the finite angular resolution of the apparatus and the velocity spread in the parent beam is examined. The experimental requirements are evaluated for he photolysis of methyl iodide by the 2537 angstrom Hg line.

  16. Fabrication of electron beam deposited tip for atomic-scale atomic force microscopy in liquid.

    PubMed

    Miyazawa, K; Izumi, H; Watanabe-Nakayama, T; Asakawa, H; Fukuma, T

    2015-03-13

    Recently, possibilities of improving operation speed and force sensitivity in atomic-scale atomic force microscopy (AFM) in liquid using a small cantilever with an electron beam deposited (EBD) tip have been intensively explored. However, the structure and properties of an EBD tip suitable for such an application have not been well-understood and hence its fabrication process has not been established. In this study, we perform atomic-scale AFM measurements with a small cantilever and clarify two major problems: contaminations from a cantilever and tip surface, and insufficient mechanical strength of an EBD tip having a high aspect ratio. To solve these problems, here we propose a fabrication process of an EBD tip, where we attach a 2 μm silica bead at the cantilever end and fabricate a 500-700 nm EBD tip on the bead. The bead height ensures sufficient cantilever-sample distance and enables to suppress long-range interaction between them even with a short EBD tip having high mechanical strength. After the tip fabrication, we coat the whole cantilever and tip surface with Si (30 nm) to prevent the generation of contamination. We perform atomic-scale AFM imaging and hydration force measurements at a mica-water interface using the fabricated tip and demonstrate its applicability to such an atomic-scale application. With a repeated use of the proposed process, we can reuse a small cantilever for atomic-scale measurements for several times. Therefore, the proposed method solves the two major problems and enables the practical use of a small cantilever in atomic-scale studies on various solid-liquid interfacial phenomena.

  17. LC-MS with electron ionization of cold molecules in supersonic molecular beams

    NASA Astrophysics Data System (ADS)

    Granot, Ori; Amirav, Aviv

    2005-06-01

    A new approach is described for the combination of electron ionization and LC-MS based on sample ionization as vibrationally cold molecules in a supersonic molecular beam (Cold EI). Cold EI of sample compounds in liquid solutions (methanol, acetonitrile, water, etc.) is achieved through spray formation, followed by soft thermal vaporization of the sample particles prior to their supersonic expansion and direct electron ionization of the sample compounds while they are contained in a supersonic molecular beam (SMB). Cold EI mass spectra were demonstrated to combine an enhanced molecular ion and improved mass spectral information (in comparison with standard EI), plus all the library searchable fragments. Cold EI enables the ionization of a broad range of compounds, including the full range of non-polar samples. Four orders of magnitude linear dynamic range is demonstrated and a detection limit of 2 pg was achieved for a 774 amu compound in single ion monitoring mode at m/z = 774. The method and apparatus are under continuous development and we feel that it can excel particularly in the analysis of unknown samples, while enabling fast LC-MS analysis through automated mass spectral deconvolution of coeluting LC peaks. In addition, the same MS system can also serve as an advanced GC-MS with supersonic molecular beams.

  18. Effects of space exposure on ion-beam-deposited silicon-carbide and boron-carbide coatings.

    PubMed

    Keski-Kuha, R A; Blumenstock, G M; Fleetwood, C M; Schmitt, D R

    1998-12-01

    Two recently developed optical coatings, ion-beam-deposited silicon carbide and ion-beam-deposited boron carbide, are very attractive as coatings on optical components for instruments for space astronomy and earth sciences operating in the extreme-UV spectral region because of their high reflectivity, significantly higher than any conventional coating below 105 nm. To take full advantage of these coatings in space applications, it is important to establish their ability to withstand exposure to the residual atomic oxygen and other environmental effects at low-earth-orbit altitudes. The first two flights of the Surface Effects Sample Monitor experiments flown on the ORFEUS-SPAS and the CRISTA-SPAS Shuttle missions provided the opportunity to study the effects of space exposure on these materials. The results indicate a need to protect ion-beam-deposited silicon-carbide-coated optical components from environmental effects in a low-earth orbit. The boron-carbide thin-film coating is a more robust coating able to withstand short-term exposure to atomic oxygen in a low-earth-orbit environment.

  19. A study on the radiation resistance of CdWO4 thin-film scintillators deposited by using an electron-beam physical vapor deposition method

    NASA Astrophysics Data System (ADS)

    Park, Seyong; Yoon, Young Soo

    2016-09-01

    In this paper, we report the first successful fabrication of CdWO4 thin film scintillators deposited on quartz glass substrates by using an electron-beam physical vapor deposition method. The films were dense, uniform, and crack-free. CdWO4 thin-film samples of varying thicknesses were investigated by using structural and optical characterization techniques. An optimized thickness for the CdWO4 thin-film scintillators was discovered. The scintillation and the optical properties were found to depend strongly on the annealing process. The annealing process resulted in thin films with a distinct crystal structure and with improved transparency and scintillation properties. For potential applications in gamma-ray energy storage systems, photoluminescence measurements were performed using gamma rays at a dose rate of 10 kGy h-1.

  20. Monte Carlo simulation of energy deposition by low-energy electrons in molecular hydrogen

    NASA Technical Reports Server (NTRS)

    Heaps, M. G.; Furman, D. R.; Green, A. E. S.

    1975-01-01

    A set of detailed atomic cross sections has been used to obtain the spatial deposition of energy by 1-20-eV electrons in molecular hydrogen by a Monte Carlo simulation of the actual trajectories. The energy deposition curve (energy per distance traversed) is quite peaked in the forward direction about the entry point for electrons with energies above the threshold of the electronic states, but the peak decreases and broadens noticeably as the electron energy decreases below 10 eV (threshold for the lowest excitable electronic state of H2). The curve also assumes a very symmetrical shape for energies below 10 eV, indicating the increasing importance of elastic collisions in determining the shape of the curve, although not the mode of energy deposition.

  1. On the magnetic properties of iron nanostructures fabricated via focused electron beam induced deposition and autocatalytic growth processes.

    PubMed

    Tu, F; Drost, M; Vollnhals, F; Späth, A; Carrasco, E; Fink, R H; Marbach, H

    2016-09-01

    We employ Electron beam induced deposition (EBID) in combination with autocatalytic growth (AG) processes to fabricate magnetic nanostructures with controllable shapes and thicknesses. Following this route, different Fe deposits were prepared on silicon nitride membranes under ultra-high vacuum conditions and studied by scanning electron microscopy (SEM) and scanning transmission x-ray microspectroscopy (STXM). The originally deposited Fe nanostructures are composed of pure iron, especially when fabricated via autocatalytic growth processes. Quantitative near-edge x-ray absorption fine structure (NEXAFS) spectroscopy was employed to derive information on the thickness dependent composition. X-ray magnetic circular dichroism (XMCD) in STXM was used to derive the magnetic properties of the EBID prepared structures. STXM and XMCD analysis evinces the existence of a thin iron oxide layer at the deposit-vacuum interface, which is formed during exposure to ambient conditions. We were able to extract magnetic hysteresis loops for individual deposits from XMCD micrographs with varying external magnetic field. Within the investigated thickness range (2-16 nm), the magnetic coercivity, as evaluated from the width of the hysteresis loops, increases with deposit thickness and reaches a maximum value of ∼160 Oe at around 10 nm. In summary, we present a viable technique to fabricate ferromagnetic nanostructures in a controllable way and gain detailed insight into their chemical and magnetic properties.

  2. On the magnetic properties of iron nanostructures fabricated via focused electron beam induced deposition and autocatalytic growth processes

    NASA Astrophysics Data System (ADS)

    Tu, F.; Drost, M.; Vollnhals, F.; Späth, A.; Carrasco, E.; Fink, R. H.; Marbach, H.

    2016-09-01

    We employ Electron beam induced deposition (EBID) in combination with autocatalytic growth (AG) processes to fabricate magnetic nanostructures with controllable shapes and thicknesses. Following this route, different Fe deposits were prepared on silicon nitride membranes under ultra-high vacuum conditions and studied by scanning electron microscopy (SEM) and scanning transmission x-ray microspectroscopy (STXM). The originally deposited Fe nanostructures are composed of pure iron, especially when fabricated via autocatalytic growth processes. Quantitative near-edge x-ray absorption fine structure (NEXAFS) spectroscopy was employed to derive information on the thickness dependent composition. X-ray magnetic circular dichroism (XMCD) in STXM was used to derive the magnetic properties of the EBID prepared structures. STXM and XMCD analysis evinces the existence of a thin iron oxide layer at the deposit-vacuum interface, which is formed during exposure to ambient conditions. We were able to extract magnetic hysteresis loops for individual deposits from XMCD micrographs with varying external magnetic field. Within the investigated thickness range (2-16 nm), the magnetic coercivity, as evaluated from the width of the hysteresis loops, increases with deposit thickness and reaches a maximum value of ˜160 Oe at around 10 nm. In summary, we present a viable technique to fabricate ferromagnetic nanostructures in a controllable way and gain detailed insight into their chemical and magnetic properties.

  3. Ion-beam-assisted deposition of MoS2 and other low-friction films. Interim report, Jun 88-Jun 92

    SciTech Connect

    Bolster, R.N.

    1992-09-11

    Vacuum-deposited films of molybdenum disulfide (MoS2) are effective as solid lubricants. Ion-beam-assisted deposition, which employs ion beam sputtering with an assist beam impinging on the growing film, has been investigated as a means of preparing low-friction high endurance coatings. The apparatus used and some of the techniques involved are described. Ion source operating parameters were optimized and the assist beam ion flux was quantified and found to follow a power-law relationship with beam power. The best way to produce MoS2 films was found to be cosputtering from separate Mo and S targets with deposition rates adjusted to obtain the desired stoichiometry. Deposition rates were found to also follow a power-law relationship with beam power, and formulae are given for predicting them, the ratio of assist ions to film atoms, and the effect of assist beam sputtering on film thickness. Inverse formulae are given for determining process parameters needed to achieve a selected film thickness and composition. A composite target for simultaneous Mo and S sputtering was developed. Deposition rates were determined for other metals: W, N1, Co, Cu, and Pb. Formulae relating target-to-substrate distance to deposition rate are given.

  4. Ion-beam assisted deposition of MgO with in situ RHEED monitoring to control Bi-axial texture

    SciTech Connect

    Arendt, P. N.; Foltyn, S. R.; Jia, Quanxi; DePaula, R. F.; Dowden, P. C.; Kung, H.; Holesinger, T. G.; Stan, L.; Emmert, L. A.; Peterson, E. J.; Groves, J. R.

    2001-01-01

    We have studied the growth of magnesium oxide using ion-beam assisted deposition (IBAD) to achieve (100) oriented, bi-axially textured films with low mosaic spread, for film thicknesses of 10 nm on silicon substrates. We have refined the process by using reflected high-energy electron diffraction (RHEED) to monitor the growth of IBAD MgO films and found that the diffracted intensity can be used to determine (and ultimately control) final in-plane texture of the film. Here we present results on our work to develop the use of real-time RHEED monitoring to deposit well-oriented IBAD MgO films. The results have been corroborated with extensive grazing-incidence X-ray diffraction (GID). Results of these analyses have allowed us to deposit films on metallic substrates with in-plane mosaic spread less than 7{sup o}.

  5. Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide

    DOEpatents

    Feng, Tom; Ghosh, Amal K.

    1979-01-01

    In preparing tin oxide and indium tin oxide-silicon heterojunction solar cells by electron beam sublimation of the oxide and subsequent deposition thereof on the silicon, the engineering efficiency of the resultant cell is enhanced by depositing the oxide at a predetermined favorable angle of incidence. Typically the angle of incidence is between 40.degree. and 70.degree. and preferably between 55.degree. and 65.degree. when the oxide is tin oxide and between 40.degree. and 70.degree. when the oxide deposited is indium tin oxide. gi The Government of the United States of America has rights in this invention pursuant to Department of Energy Contract No. EY-76-C-03-1283.

  6. In situ mass measurement of electron-beam-induced nanometer-sized W-related deposits using a carbon nanotube cantilever

    SciTech Connect

    Sawaya, Shintaro; Akita, Seiji; Nakayama, Yoshikazu

    2006-11-06

    Using a carbon nanotube oscillator, the authors performed in situ measurements of densities of electron-beam-induced tungsten compounds with size of less than 100 nm. Total mass of the deposit was proportional to the deposition time. A higher deposition rate was obtained at lower electron-beam acceleration voltage. Density of the deposit decreased from 2.7 to 1.4 g/cm{sup 3} with increasing acceleration voltage from 5 to 15 kV. These results indicate that the increased density with low-acceleration voltage produces effective decomposition of W(CO){sub 6}.

  7. A new high intensity and short-pulse molecular beam valve

    NASA Astrophysics Data System (ADS)

    Yan, B.; Claus, P. F. H.; van Oorschot, B. G. M.; Gerritsen, L.; Eppink, A. T. J. B.; van de Meerakker, S. Y. T.; Parker, D. H.

    2013-02-01

    In this paper, we report on the design and performance of a new home-built pulsed gas valve, which we refer to as the Nijmegen Pulsed Valve (NPV). The main output characteristics include a short pulse width (as short as 20 μs) combined with operating rates up to 30 Hz. The operation principle of the NPV is based on the Lorentz force created by a pulsed current passing through an aluminum strip located within a magnetic field, which opens the nozzle periodically. The amplitude of displacement of the opening mechanism is sufficient to allow the use of nozzles with up to 1.0 mm diameter. To investigate the performance of the valve, several characterizations were performed with different experimental methods. First, a fast ionization gauge was used to measure the beam intensity of the free jet emanating from the NPV. We compare free jets from the NPV with those from several other pulsed valves in current use in our laboratory. Results showed that a high intensity and short pulse-length beam could be generated by the new valve. Second, the NPV was tested in combination with a skimmer, where resonance enhanced multiphoton ionization combined with velocity map imaging was used to show that the NPV was able to produce a pulsed molecular beam with short pulse duration (˜20 μs using 0.1% NO/He at 6 bars) and low rotational temperature (˜1 K using 0.5% NO/Ar at 6 bars). Third, a novel two-point pump-probe method was employed which we label double delay scan. This method allows a full kinematic characterization of the molecular beam, including accurate speed ratios at different temporal positions. It was found that the speed ratio was maximum (S = 50 using 0.1% NO/He at 3 bars) at the peak position of the molecular beam and decreased when it was on the leading or falling edge.

  8. Comb-assisted cavity ring-down spectroscopy of a buffer-gas-cooled molecular beam.

    PubMed

    Santamaria, Luigi; Sarno, Valentina Di; Natale, Paolo De; Rosa, Maurizio De; Inguscio, Massimo; Mosca, Simona; Ricciardi, Iolanda; Calonico, Davide; Levi, Filippo; Maddaloni, Pasquale

    2016-06-22

    We demonstrate continuous-wave cavity ring-down spectroscopy of a partially hydrodynamic molecular beam emerging from a buffer-gas-cooling source. Specifically, the (ν1 + ν3) vibrational overtone band of acetylene (C2H2) around 1.5 μm is accessed using a narrow-linewidth diode laser stabilized against a GPS-disciplined rubidium clock via an optical frequency comb synthesizer. As an example, the absolute frequency of the R(1) component is measured with a fractional accuracy of ∼1 × 10(-9). Our approach represents the first step towards the extension of more sophisticated cavity-enhanced interrogation schemes, including saturated absorption cavity ring-down or two-photon excitation, to buffer-gas-cooled molecular beams.

  9. Origin and reduction of interfacial boron spikes in silicon molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Iyer, S. S.; Delage, S. L.; Scilla, G. J.

    1988-02-01

    An interfacial boron spike is formed during the molecular beam epitaxial growth of Si. We show two possible sources for this unintentional spike. We have found that some boron contamination invariably occurs when silicon surfaces are exposed to air. A greater degree of contamination results when the sample is heated to temperatures greater than 800 °C, as required for creating an atomically clean surface prior to molecular beam epitaxial growth. A source of boron suboxides, internal to the ultrahigh-vacuum system, was detected by residual gas analysis. While anneals at 1000 °C or greater result in almost complete activation of the B, we observe that for a cleaning regimen at 850 °C, less than 10% of the boron is active. Our results are consistent with the oxidation of the suboxides on oxygen-contaminated surfaces and their subsequent reduction at higher temperatures by silicon, with the volatization of SiO. Subsequent incorporation is by indiffusion.

  10. Comb-assisted cavity ring-down spectroscopy of a buffer-gas-cooled molecular beam.

    PubMed

    Santamaria, Luigi; Sarno, Valentina Di; Natale, Paolo De; Rosa, Maurizio De; Inguscio, Massimo; Mosca, Simona; Ricciardi, Iolanda; Calonico, Davide; Levi, Filippo; Maddaloni, Pasquale

    2016-06-22

    We demonstrate continuous-wave cavity ring-down spectroscopy of a partially hydrodynamic molecular beam emerging from a buffer-gas-cooling source. Specifically, the (ν1 + ν3) vibrational overtone band of acetylene (C2H2) around 1.5 μm is accessed using a narrow-linewidth diode laser stabilized against a GPS-disciplined rubidium clock via an optical frequency comb synthesizer. As an example, the absolute frequency of the R(1) component is measured with a fractional accuracy of ∼1 × 10(-9). Our approach represents the first step towards the extension of more sophisticated cavity-enhanced interrogation schemes, including saturated absorption cavity ring-down or two-photon excitation, to buffer-gas-cooled molecular beams. PMID:27273337

  11. High temperature and high resolution uv photoelectron spectroscopy using supersonic molecular beams

    SciTech Connect

    Wang, Lai-Sheng; Reutt-Robey, J.E.; Niu, B.; Lee, Y.T.; Shirley, D.A.; Maryland Univ., College Park, MD . Dept. of Chemistry and Biochemistry; Lawrence Berkeley Lab., CA )

    1989-07-01

    A high temperature molecular beam source with electron bombardment heating has been built for high resolution photoelectron spectroscopic studies of high temperature species and clusters. This source has the advantages of: producing an intense, continuous, seeded molecular beam, eliminating the interference of the heating mechanism from the photoelectron measurement. Coupling the source with our hemispherical electron energy analyzer, we can obtain very high resolution HeI{alpha} (584{angstrom}) photoelectron spectra of high temperature species. Vibrationally-resolved photoelectron spectra of PbSe, As{sub 2}, As{sub 4}, and ZnCl{sub 2} are shown to demonstrate the performance of the new source. 25 refs., 8 figs., 1 tab.

  12. The role of low-energy electrons in focused electron beam induced deposition: four case studies of representative precursors.

    PubMed

    Thorman, Rachel M; Kumar T P, Ragesh; Fairbrother, D Howard; Ingólfsson, Oddur

    2015-01-01

    Focused electron beam induced deposition (FEBID) is a single-step, direct-write nanofabrication technique capable of writing three-dimensional metal-containing nanoscale structures on surfaces using electron-induced reactions of organometallic precursors. Currently FEBID is, however, limited in resolution due to deposition outside the area of the primary electron beam and in metal purity due to incomplete precursor decomposition. Both limitations are likely in part caused by reactions of precursor molecules with low-energy (<100 eV) secondary electrons generated by interactions of the primary beam with the substrate. These low-energy electrons are abundant both inside and outside the area of the primary electron beam and are associated with reactions causing incomplete ligand dissociation from FEBID precursors. As it is not possible to directly study the effects of secondary electrons in situ in FEBID, other means must be used to elucidate their role. In this context, gas phase studies can obtain well-resolved information on low-energy electron-induced reactions with FEBID precursors by studying isolated molecules interacting with single electrons of well-defined energy. In contrast, ultra-high vacuum surface studies on adsorbed precursor molecules can provide information on surface speciation and identify species desorbing from a substrate during electron irradiation under conditions more representative of FEBID. Comparing gas phase and surface science studies allows for insight into the primary deposition mechanisms for individual precursors; ideally, this information can be used to design future FEBID precursors and optimize deposition conditions. In this review, we give a summary of different low-energy electron-induced fragmentation processes that can be initiated by the secondary electrons generated in FEBID, specifically, dissociative electron attachment, dissociative ionization, neutral dissociation, and dipolar dissociation, emphasizing the different

  13. The role of low-energy electrons in focused electron beam induced deposition: four case studies of representative precursors

    PubMed Central

    Thorman, Rachel M; Kumar T. P., Ragesh; Fairbrother, D Howard

    2015-01-01

    Summary Focused electron beam induced deposition (FEBID) is a single-step, direct-write nanofabrication technique capable of writing three-dimensional metal-containing nanoscale structures on surfaces using electron-induced reactions of organometallic precursors. Currently FEBID is, however, limited in resolution due to deposition outside the area of the primary electron beam and in metal purity due to incomplete precursor decomposition. Both limitations are likely in part caused by reactions of precursor molecules with low-energy (<100 eV) secondary electrons generated by interactions of the primary beam with the substrate. These low-energy electrons are abundant both inside and outside the area of the primary electron beam and are associated with reactions causing incomplete ligand dissociation from FEBID precursors. As it is not possible to directly study the effects of secondary electrons in situ in FEBID, other means must be used to elucidate their role. In this context, gas phase studies can obtain well-resolved information on low-energy electron-induced reactions with FEBID precursors by studying isolated molecules interacting with single electrons of well-defined energy. In contrast, ultra-high vacuum surface studies on adsorbed precursor molecules can provide information on surface speciation and identify species desorbing from a substrate during electron irradiation under conditions more representative of FEBID. Comparing gas phase and surface science studies allows for insight into the primary deposition mechanisms for individual precursors; ideally, this information can be used to design future FEBID precursors and optimize deposition conditions. In this review, we give a summary of different low-energy electron-induced fragmentation processes that can be initiated by the secondary electrons generated in FEBID, specifically, dissociative electron attachment, dissociative ionization, neutral dissociation, and dipolar dissociation, emphasizing the

  14. Beam deflection measurement of bound-electronic and rotational nonlinear refraction in molecular gases.

    PubMed

    Reichert, Matthew; Zhao, Peng; Reed, Jennifer M; Ensley, Trenton R; Hagan, David J; Van Stryland, Eric W

    2015-08-24

    A polarization-resolved beam deflection technique is used to separate the bound-electronic and molecular rotational components of nonlinear refractive transients of molecular gases. Coherent rotational revivals from N(2), O(2), and two isotopologues of carbon disulfide (CS(2)), are identified in gaseous mixtures. Dephasing rates, rotational and centrifugal distortion constants of each species are measured. Polarization at the magic angle allows unambiguous measurement of the bound-electronic nonlinear refractive index of air and second hyperpolarizability of CS(2). Agreement between gas and liquid phase second hyperpolarizability measurements is found using the Lorentz-Lorenz local field correction.

  15. Molecular beams entwined with quantum theory: A bouquet for Max Planck

    NASA Astrophysics Data System (ADS)

    Herschbach, D.

    2001-01-01

    In an era when the fledgling quantum theory was uncertain and even gave contradictory answers, Otto Stern undertook to employ molecular beams to test directly fundamental aspects of the theory. During 1921-1935, this led to five decisive experiments reviewed here, resulting in the discovery or demonstration of space quantization, de Broglie matter waves, anomalous magnetic moments of the proton and neutron, recoil of an atom on emission of a photon, and the limitation of scattering cross-sections for molecular collisions imposed by the uncertainty principle.

  16. Surfactant effect of gallium during the growth of GaN on AlN(0001xAF) by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Gogneau, N.; Sarigiannidou, E.; Monroy, E.; Monnoye, S.; Mank, H.; Daudin, B.

    2004-08-01

    The growth mode of N-face GaN deposited on AlN(0001¯) by plasma-assisted molecular beam epitaxy has been investigated. Based on reflection high-energy electron diffraction experiments, we demonstrate that for appropriate Ga fluxes and substrate temperature, a self-regulated 1-ML-thick Ga excess film can be formed on the growing surface. Depending on the presence of this Ga monolayer, the growth can proceed following either the Stranski-Krastanow or the Frank Van der Merwe growth modes, hence enabling the synthesis of either quantum dots or quantum wells.

  17. A 100 microsec, reliable, 10 Hz pulsed supersonic molecular beam source

    NASA Technical Reports Server (NTRS)

    Byer, R. L.; Duncan, M. D.

    1981-01-01

    A 10-Hz repetition rate, 100-microsec duration, reliable pulsed supersonic molecular beam source is described. Mechanical and electrical design of the pulsed valve are given in detail. Characteristics of the supersonic expansion obtained using coherent anti-Stokes Raman spectroscopy in acetylene are presented. They include pulse shape, gas rotational and translational cooling as a function of distance from the nozzle, clustering effects, and shock heating at the leading edge of the pulse.

  18. Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

    NASA Technical Reports Server (NTRS)

    Benz, R. G., II; Huang, P. C.; Stock, S. R.; Summers, C. J.

    1988-01-01

    The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

  19. ZnSe/CdSe Superlattice Nanowires by Catalyst-assisted Molecular Beam Epitaxy

    SciTech Connect

    Karczewski, G.; Dluzewski, P.; Kret, S.; Klopotowski, L.; Wojtowicz, T.

    2007-04-10

    We report on Au catalyst-assisted molecular beam epitaxy growth and properties of pure ZnSe and ZnSe/CdSe superlattice nanowires. In particular, we concentrate our attention on the morphological characterization by transmission and scanning electron microscopy of pure ZnSe NWs and we compare their optical properties with those of ZnSe/CdSe superlattice NWs fabricated at the same technological conditions.

  20. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

    SciTech Connect

    Cruz Hernandez, Esteban; Rojas Ramirez, Juan-Salvador; Contreras Hernandez, Rocio; Lopez Lopez, Maximo; Pulzara Mora, Alvaro; Mendez Garcia, Victor H.

    2007-02-09

    In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface.

  1. Antimony-assisted carbonization of Si(111) with solid source molecular beam epitaxy

    SciTech Connect

    Hackley, Justin; Richardson, Christopher J. K.; Sarney, Wendy L.

    2013-11-15

    The carbonization of an antimony-terminated Si (111) surface in a solid source molecular beam epitaxy system is presented. Reflection high-energy electron diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, and cross-sectional transmission electron microscopy are used to characterize samples grown with and without antimony termination. It is shown that the antimony-terminated surface promotes the formation of thin, smooth and continuous SiC films at a relatively low temperature of 800 °C.

  2. (In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties

    SciTech Connect

    Bouravleuv, A. D. Nevedomskii, V. N.; Ubyivovk, E. V.; Sapega, V. F.; Khrebtov, A. I.; Samsonenko, Yu. B.; Cirlin, G. E.; Ustinov, V. M.

    2013-08-15

    Self-assembled (In,Mn)As quantum dots are synthesized by molecular-beam epitaxy on GaAs (001) substrates. The experimental results obtained by transmission electron microscopy show that doping of the central part of the quantum dots with Mn does not bring about the formation of structural defects. The optical properties of the samples, including those in external magnetic fields, are studied.

  3. Tunable molecular orientation and elevated thermal stability of vapor-deposited organic semiconductors

    PubMed Central

    Walters, Diane M.; Lyubimov, Ivan; de Pablo, Juan J.; Ediger, M. D.

    2015-01-01

    Physical vapor deposition is commonly used to prepare organic glasses that serve as the active layers in light-emitting diodes, photovoltaics, and other devices. Recent work has shown that orienting the molecules in such organic semiconductors can significantly enhance device performance. We apply a high-throughput characterization scheme to investigate the effect of the substrate temperature (Tsubstrate) on glasses of three organic molecules used as semiconductors. The optical and material properties are evaluated with spectroscopic ellipsometry. We find that molecular orientation in these glasses is continuously tunable and controlled by Tsubstrate/Tg, where Tg is the glass transition temperature. All three molecules can produce highly anisotropic glasses; the dependence of molecular orientation upon substrate temperature is remarkably similar and nearly independent of molecular length. All three compounds form “stable glasses” with high density and thermal stability, and have properties similar to stable glasses prepared from model glass formers. Simulations reproduce the experimental trends and explain molecular orientation in the deposited glasses in terms of the surface properties of the equilibrium liquid. By showing that organic semiconductors form stable glasses, these results provide an avenue for systematic performance optimization of active layers in organic electronics. PMID:25831545

  4. Comparative Study of Solid-Phase Crystallization of Amorphous Silicon Deposited by Hot-Wire CVD, Plasma-Enhanced CVD, and Electron-Beam Evaporation

    SciTech Connect

    Stradins, P.; Kunz, O.; Young, D. L.; Yan, Y.; Jones, K. M.; Xu, Y.; Reedy, R. C.; Branz, H. M.; Aberle, A. G.; Wang, Q.

    2007-01-01

    Solid-phase crystallization (SPC) rates are compared in amorphous silicon films prepared by three different methods: hot-wire chemical vapor deposition (HWCVD), plasma-enhanced chemical vapor deposition (PECVD), and electron-beam physical vapor deposition (e-beam). Random SPC proceeds approximately 5 and 13 times slower in PECVD and e-beam films, respectively, as compared to HWCVD films. Doping accelerates random SPC in e-beam films but has little effect on the SPC rate of HWCVD films. In contrast, the crystalline growth front in solid-phase epitaxy experiments propagates at similar speed in HWCVD, PECVD, and e-beam amorphous Si films. This strongly suggests that the observed large differences in random SPC rates originate from different nucleation rates in these materials while the grain growth rates are relatively similar. The larger grain sizes observed for films that exhibit slower random SPC support this suggestion.

  5. Development of Layered Multiscale Porous Thin Films by Tuning Deposition Time and Molecular Weight of Polyelectrolytes.

    PubMed

    Yu, Jing; Sanyal, Oishi; Izbicki, Andrew P; Lee, Ilsoon

    2015-09-01

    This work focuses on the design of porous polymeric films with nano- and micro-sized pores existing in distinct zones. The porous thin films are fabricated by the post-treatment of layer-by-layer assembled poly(allylamine hydrochloride) (PAH)/poly(acrylic acid) (PAA) multilayers. In order to improve the processing efficiency, the deposition time is shortened to ≈ 10 s. It is found that fine porous structures can be created even by significantly reducing the processing time. The effect of using polyelectrolytes with widely different molecular weights is also studied. The pore size is increased by using high molecular weight PAH, while high molecular weight PAA minimizes the pore size to nanometer scale. Having gained a precise control over the pore size, layered multiscale porous thin films are further built up with either a microsized porous zone on top of a nanosized porous zone or vice versa.

  6. Identification and roles of nonstoichiometric oxygen in amorphous Ta2O5 thin films deposited by electron beam and sputtering processes

    NASA Astrophysics Data System (ADS)

    Mannequin, Cedric; Tsuruoka, Tohru; Hasegawa, Tsuyoshi; Aono, Masakazu

    2016-11-01

    The morphology and composition of tantalum oxide (Ta2O5) thin films prepared by electron-beam (EB) evaporation and radio-frequency sputtering (SP) were investigated by grazing incidence X-ray diffraction (GIXRD), X-ray reflectometry (XRR), atomic force microscopy, Fourier transformed infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS). GIXRD revealed an amorphous nature for both films, and XRR showed that the density of the Ta2O5-EB films was lower than that of the Ta2O5-SP films; both films have lower density than the bulk value. A larger amount of molecular water and peroxo species were detected for the Ta2O5-EB films by FTIR performed in ambient atmosphere. XPS analyses performed in vacuum confirmed the presence of hydroxyl groups, but no trace of chemisorbed molecular water was detected. In addition, a higher oxygen nonstoichiometry (higher O/Ta ratio) was found for the EB films. From these results, we conclude that the oxygen nonstoichiometry of the EB film accounted for its lower density and higher amount of absorbed molecular water. The results also suggest the importance of understanding the dependence of the structural and chemical properties of thin amorphous oxide films on the deposition process.

  7. Collapse of a composite beam made from ultra high molecular-weight polyethylene fibres

    NASA Astrophysics Data System (ADS)

    Liu, G.; Thouless, M. D.; Deshpande, V. S.; Fleck, N. A.

    2014-02-01

    Hot-pressed laminates with a [0/90]48 lay-up, consisting of 83% by volume of ultra high molecular-weight polyethylene (UHMWPE) fibres, and 17% by volume of polyurethane (PU) matrix, were cut into cantilever beams and subjected to transverse end-loading. The collapse mechanisms were observed both visually and by X-ray scans. Short beams deform elastically and collapse plastically in longitudinal shear, with a shear strength comparable to that observed in double notch, interlaminar shear tests. In contrast, long cantilever beams deform in bending and collapse via a plastic hinge at the built-in end of the beam. The plastic hinge is formed by two wedge-shaped microbuckle zones that grow in size and in intensity with increasing hinge rotation. This new mode of microbuckling under macroscopic bending involves both elastic bending and shearing of the plies, and plastic shear of the interface between each ply. The double-wedge pattern contrasts with the more usual parallel-sided plastic microbuckle that occurs in uniaxial compression. Finite element simulations and analytical models give additional insight into the dominant material and geometric parameters that dictate the collapse response of the UHMWPE composite beam in bending. Detailed comparisons between the observed and predicted collapse responses are used in order to construct a constitutive model for laminated UHMWPE composites.

  8. Electron ionization LC-MS with supersonic molecular beams--the new concept, benefits and applications.

    PubMed

    Seemann, Boaz; Alon, Tal; Tsizin, Svetlana; Fialkov, Alexander B; Amirav, Aviv

    2015-11-01

    A new type of electron ionization LC-MS with supersonic molecular beams (EI-LC-MS with SMB) is described. This system and its operational methods are based on pneumatic spray formation of the LC liquid flow in a heated spray vaporization chamber, full sample thermal vaporization and subsequent electron ionization of vibrationally cold molecules in supersonic molecular beams. The vaporized sample compounds are transferred into a supersonic nozzle via a flow restrictor capillary. Consequently, while the pneumatic spray is formed and vaporized at above atmospheric pressure the supersonic nozzle backing pressure is about 0.15 Bar for the formation of supersonic molecular beams with vibrationally cold sample molecules without cluster formation with the solvent vapor. The sample compounds are ionized in a fly-though EI ion source as vibrationally cold molecules in the SMB, resulting in 'Cold EI' (EI of vibrationally cold molecules) mass spectra that exhibit the standard EI fragments combined with enhanced molecular ions. We evaluated the EI-LC-MS with SMB system and demonstrated its effectiveness in NIST library sample identification which is complemented with the availability of enhanced molecular ions. The EI-LC-MS with SMB system is characterized by linear response of five orders of magnitude and uniform compound independent response including for non-polar compounds. This feature improves sample quantitation that can be approximated without compound specific calibration. Cold EI, like EI, is free from ion suppression and/or enhancement effects (that plague ESI and/or APCI) which facilitate faster LC separation because full separation is not essential. The absence of ion suppression effects enables the exploration of fast flow injection MS-MS as an alternative to lengthy LC-MS analysis. These features are demonstrated in a few examples, and the analysis of the main ingredients of Cannabis on a few Cannabis flower extracts is demonstrated. Finally, the advantages of

  9. On the magnetic properties of iron nanostructures fabricated via focused electron beam induced deposition and autocatalytic growth processes

    NASA Astrophysics Data System (ADS)

    Tu, F.; Drost, M.; Vollnhals, F.; Späth, A.; Carrasco, E.; Fink, R. H.; Marbach, H.

    2016-09-01

    We employ Electron beam induced deposition (EBID) in combination with autocatalytic growth (AG) processes to fabricate magnetic nanostructures with controllable shapes and thicknesses. Following this route, different Fe deposits were prepared on silicon nitride membranes under ultra-high vacuum conditions and studied by scanning electron microscopy (SEM) and scanning transmission x-ray microspectroscopy (STXM). The originally deposited Fe nanostructures are composed of pure iron, especially when fabricated via autocatalytic growth processes. Quantitative near-edge x-ray absorption fine structure (NEXAFS) spectroscopy was employed to derive information on the thickness dependent composition. X-ray magnetic circular dichroism (XMCD) in STXM was used to derive the magnetic properties of the EBID prepared structures. STXM and XMCD analysis evinces the existence of a thin iron oxide layer at the deposit–vacuum interface, which is formed during exposure to ambient conditions. We were able to extract magnetic hysteresis loops for individual deposits from XMCD micrographs with varying external magnetic field. Within the investigated thickness range (2–16 nm), the magnetic coercivity, as evaluated from the width of the hysteresis loops, increases with deposit thickness and reaches a maximum value of ∼160 Oe at around 10 nm. In summary, we present a viable technique to fabricate ferromagnetic nanostructures in a controllable way and gain detailed insight into their chemical and magnetic properties.

  10. Properties of large area ErBa2Cu3O(7-x) thin films deposited by ionized cluster beams

    NASA Technical Reports Server (NTRS)

    Levenson, L. L.; Stan, Mark A.; Bhasin, Kul B.

    1991-01-01

    ErBa2Cu3O(7-x) films have been produced by simultaneous deposition of Er, Ba, and Cu from three ionized cluster beam (ICB) sources at acceleration voltages of 0.3 to 0.5 kV. Combining ozone oxidation with ICB deposition at 650 C eliminated any need of post annealing processing. The substrates were rotated at 10 rotations per minute during the deposition which took place at a rate of about 3 to 4 nm. Films with areas up to 70 mm in diameter have been made by ICB deposition. These films, 100 nm thick, were deposited on SrTiO3 (100) substrates at 650 C in a mixture of six percent O3 in O2 at a total pressure of 4 x 10(exp -4) Torr. They had T(sub c) ranging from 84.3 K to 86.8 K over a 70 mm diameter and J(sub c) above 10(exp 6) A/sq cm at 77 K. X ray diffraction measurements of the three samples showed preferential c-axis orientation normal to the substrate surface. Scanning electron micrographs (SEM) of the three samples also show some texture dependence on sample position. For the three samples, there is a correlation between SEM texture, full width at half-maximum of rocking curves and J(sub c) versus temperature curves.

  11. Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition.

    PubMed

    Meng, Jun Hua; Zhang, Xing Wang; Wang, Hao Lin; Ren, Xi Biao; Jin, Chuan Hong; Yin, Zhi Gang; Liu, Xin; Liu, Heng

    2015-10-14

    Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were obtained by using the continuous h-BN film as a substrate. Furthermore, the well-designed sub-bilayered h-BN substrates provide direct evidence that the monolayered h-BN on Cu exhibits higher catalytic activity than the bilayered h-BN on Cu. The growth method applied here may have great potential in the scalable preparation of large-area high-quality graphene/h-BN heterostructures.

  12. Tunable Molecular Orientation of Organic Semiconductors in Vapor-Deposited Amorphous Solids

    NASA Astrophysics Data System (ADS)

    Walters, Diane; Dalal, Shakeel; Ediger, Mark

    2014-03-01

    Amorphous solids made by physical vapor deposition (PVD) of organic molecules have found increasing use in organic LEDs and photovoltaics. PVD is favored because it allows precise control of layer thickness and high material purity, however the impact of deposition conditions on the structure of amorphous solids has been largely uninvestigated. We have previously shown that solid films prepared by PVD can have drastically higher densities, moduli and thermal stability than are obtainable by cooling the liquid. Using a high-throughput characterization technique, we show that PVD is also able to impart significant molecular orientation into amorphous solids. We present work on several common molecules used in organic semiconducting devices including AlQ3, NPB, TPD, CBP, DSA-Ph, and BSB-Cz. The molecular orientation depends systematically on the substrate temperature during deposition. At low temperatures there is a strong tendency to lie parallel to the substrate, while at higher temperatures there is a tendency to stand vertically on end. It is anticipated, and in some limited cases has been previously shown, that this orientation can significantly affect charge mobility and light out-coupling efficiency in devices.

  13. Energy deposition of H and He ion beams in hydroxyapatite films: A study with implications for ion-beam cancer therapy

    NASA Astrophysics Data System (ADS)

    Limandri, Silvina; de Vera, Pablo; Fadanelli, Raul C.; Nagamine, Luiz C. C. M.; Mello, Alexandre; Garcia-Molina, Rafael; Behar, Moni; Abril, Isabel

    2014-02-01

    Ion-beam cancer therapy is a promising technique to treat deep-seated tumors; however, for an accurate treatment planning, the energy deposition by the ions must be well known both in soft and hard human tissues. Although the energy loss of ions in water and other organic and biological materials is fairly well known, scarce information is available for the hard tissues (i.e., bone), for which the current stopping power information relies on the application of simple additivity rules to atomic data. Especially, more knowledge is needed for the main constituent of human bone, calcium hydroxyapatite (HAp), which constitutes 58% of its mass composition. In this work the energy loss of H and He ion beams in HAp films has been obtained experimentally. The experiments have been performed using the Rutherford backscattering technique in an energy range of 450-2000 keV for H and 400-5000 keV for He ions. These measurements are used as a benchmark for theoretical calculations (stopping power and mean excitation energy) based on the dielectric formalism together with the MELF-GOS (Mermin energy loss function-generalized oscillator strength) method to describe the electronic excitation spectrum of HAp. The stopping power calculations are in good agreement with the experiments. Even though these experimental data are obtained for low projectile energies compared with the ones used in hadron therapy, they validate the mean excitation energy obtained theoretically, which is the fundamental quantity to accurately assess energy deposition and depth-dose curves of ion beams at clinically relevant high energies. The effect of the mean excitation energy choice on the depth-dose profile is discussed on the basis of detailed simulations. Finally, implications of the present work on the energy loss of charged particles in human cortical bone are remarked.

  14. Development of a molecular beam technique to study early solar system silicon reactions

    NASA Technical Reports Server (NTRS)

    Dong, Q. W.; Thiemens, M. H.

    1993-01-01

    Silicon monoxide is one of the major gas phase silicon bearing components observed in astronomical environments. Silicon oxide serves as the major rock forming material for terrestrial and meteoritic bodies. It is known that several gas phase reactions produce mass independent isotopic fractionations which possess the same delta(O-17)/delta(O-18) ratio observed in Allende inclusions. The general symmetry dependence of the chemically produced mass independent isotopic fractionation process suggests that there are several plausible reactions which could occur in the early solar system which may lead to production of the observed meteoritic oxygen isotopic anomalies. An important component in exploring the role of such processes is the need to experimentally determine the isotopic fractionations for specific reactions of relevance to the early solar system. It has already been demonstrated that atomic oxygen reaction with CO, a major nebular oxygen bearing species, produces a large (approximately 90 percent), mass independent isotopic fractionation. The next hurdle regarding assessing the involvement of symmetry dependent isotopic fractionation processes in the pre-solar nebula is to determine isotopic fractionation factors associated with gas phase reactions of metallic oxides. In particular, a reaction such as O + SiO yields SiO2 is a plausible nebular reaction which could produce a delta(O-17) is approximately delta(O-18) fractionation based upon molecular symmetry considerations. While the isotopic fractionations during silicate evaporation and condensation have been determined, there are no isotopic studies of controlled, gas phase nucleation processes. In order to carefully control the reaction kinetics, a molecular beam apparatus has been constructed. This system produces a supersonic, collimated beam of SiO molecules which is reacted with a second beam of oxygen atoms. An important feature of molecular beams is that they operate at sufficiently low pressures

  15. Effects of temperature on Cu structure deposited on Si substrate: A molecular dynamics study

    NASA Astrophysics Data System (ADS)

    Hidayat, Aulia Fikri; Rosikhin, Ahmad; Syuhada, Ibnu; Winata, Toto

    2016-02-01

    The deposition process of copper onto silicon substrate was studied by the molecular dynamics method. Tersoff, MEAM, and Morse potentials were used to describe the interaction of Si-Si Cu-Cu, and Cu-Si, respectively. Deposition process was performed using NVE ensemble and applying Berendsen thermostat with 0,2 fs timestep for 100 ps. The effect of substrate temperature on the percentage of amorphous structure, radial distribution function (RDF), and coordination number was investigated. The result was indicated that at 300 K, the percentage of amorphous structure was relatively lower compared to another temperature. First peaks of RDF at each temperature were found at radius 3,05 Å and were still relatively wide, indicating short-range order structure.

  16. Effects of vacuum annealing and oxygen ion beam bombarding on the electrical and optical properties of ITO films deposited by E-beam evaporation

    NASA Astrophysics Data System (ADS)

    Pan, Yongqiang; Hang, Lingxia

    2012-10-01

    Tin doped indium oxide (ITO) transparent conductive thin films with composition of 10 wt% SnO2 and 89.8 wt% In2O3 have been deposited by electron beam evaporation technique on K9 glass substrates at room temperature. The post annealing processes are done in vacuum with different annealing temperature at 100, 200, 300 and 350 ° for 1 hour, respectively. The oxygen ion energy is 800 eV; oxygen ion beam bombarding time is 10,20,30,40 and 50min, respectively. The results show that conductivity of ITO thin films are improved by increasing annealing temperature. The resistivity of the ITO thin films decrease from 5.2×10-3Ω •cm at room temperature to 1.3×10-3Ω •cm(350 °C). The transmittance values of all samples in the visible range have been increased. As the oxygen ion beam bombarding time increases the resistivity reduce from 5.2×10-3Ω •cm to 9×10-4Ω •cm, the transmittance value improve from 66% to 82% at 550nm. Finally, the vacuum annealing and oxygen ion beam bombarding are done simultaneously, at temperature of 350 °C for 1 hours, ion bombardment time for 40 min. The resistivity of obtained ITO thin film is 7×10-4Ω •cm. The maximum transmittance value is above 89% in the visible wavelength region.

  17. The Cl + O3 reaction: a detailed QCT simulation of molecular beam experiments.

    PubMed

    Menéndez, M; Castillo, J F; Martínez-Haya, B; Aoiz, F J

    2015-10-14

    We have studied in detail the dynamics of the Cl + O3 reaction in the 1-56 kcal mol(-1) collision energy range using quasi-classical trajectory (QCT) calculations on a recent potential energy surface (PES) [J. F. Castillo et al., Phys. Chem. Chem. Phys., 2011, 13, 8537]. The main goal of this work has been to assess the accuracy of the PES and the reliability of the QCT method by comparison with the existing crossed molecular beam results [J. Zhang and Y. T. Lee J. Phys. Chem. A, 1997, 101, 6485]. For this purpose, we have developed a methodology that allows us to determine the experimental observables in crossed molecular beam experiments (integral and differential cross sections, recoil velocity distributions, scattering angle-recoil velocity polar maps, etc.) as continuous functions of the collision energy. Using these distributions, raw experimental data in the laboratory frame (angular distributions and time-of-flight spectra) have been simulated from first principles with the sole information on the instrumental parameters and taking into account the energy spread. A general good agreement with the experimental data has been found, thereby demonstrating the adequacy of the QCT method and the quality of the PES to describe the dynamics of this reaction at the level of resolution of the existing crossed beam experiments. Some features which are apparent in the differential cross sections have also been analysed in terms of the dynamics of the reaction and its evolution with the collision energy.

  18. Raman analysis of SF 6 molecular beams excited by a cw CO 2 laser

    NASA Astrophysics Data System (ADS)

    Luijks, G.; Timmerman, J.; Stolte, S.; Reuss, J.

    1983-06-01

    In a molecular beam the effects of vibrational pumping of SF 6 (ν 3 = 948 cm -1) are studied, using a line-tunable cw CO 2 laser. Intracavity spontaneous Raman scattering is used for analysis. For excitation in the collision regime ( xE/ D ≤ 1), a thermal redistribution of the ν 3 excitation over all vibrational modes is found, together with an average absorption up to six photons per molecule. The infrared absorption profile shows a red-shift of 6 cm -1. For excitation in the relatively rare collision regime ( xE/ D ⩾ 4), a structured non-thermal ν 1 Raman spectrum is observed, especially in the case of seeded molecular beams (10% in He). The observed hot-band peaks can be explained in terms of single-photon absorptions and collision-induced near-resonant V-V energy transfer, leading to single, double and triple excitations of the ν 3 mode. The value of Trot in the beam is found to influence sensitively the non-resonant energy-transfer rate [e.g. hν 3(948 cm -1)+Δ Erot → h(ν 4 + ν 6)(962 cm -1) relative to the near-resonant transfer rate ( hν 3 + hν 3 → 2 hν 3 + 3.5 cm -1)].

  19. Direct formation of InAs quantum dots grown on InP (001) by solid-source molecular beam epitaxy

    SciTech Connect

    Fuster, David; Rivera, Antonio; Alen, Benito; Alonso-Gonzalez, Pablo; Gonzalez, Yolanda; Gonzalez, Luisa

    2009-03-30

    We have developed a growth process that leads to the direct formation of self-assembled InAs quantum dots on InP(001) by solid-source molecular beam epitaxy avoiding the previous formation of quantum wires usually obtained by this technique. The process consists of a periodically alternated deposition of In and As correlated with InAs(4x2){r_reversible}(2x4) surface reconstruction changes. Based on the results obtained by in situ characterization techniques, we propose that the quantum dots formation is possible due to the nucleation of In droplets over the InAs(4x2) surface during the In deposition step and their subsequent crystallization under the As step.

  20. Properties of large area ErBa2Cu3O(7-x) thin films deposited by ionized cluster beams

    NASA Technical Reports Server (NTRS)

    Levenson, L. L.; Stan, M.; Bhasin, K. B.

    1991-01-01

    Ionized cluster beam (ICB) deposition is employed to produce ErBa2Cu3O(7-x) films on different substrates without post-annealing. Films with diameters of up to 70 mm are grown on SrTiO3 100 plane and exhibit Tc values of 84-87 K, Jc of about 10 exp 6 A/sq m at 77 K. These films are epitaxial with the c-axis perpendicular to the plane of the substrate surface, and they can be routinely produced by ICB with good Jc and Tc.

  1. Purification of Nanoscale Electron-Beam-Induced Platinum Deposits via a Pulsed Laser-Induced Oxidation Reaction

    DOE PAGESBeta

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; Fowlkes, Jason Davidson; Roberts, Nicholas A.; Plank, Harald; Rack, Philip D.

    2014-11-05

    Platinum–carbon deposits made via electron-beam-induced deposition were purified in this study via a pulsed laser-induced oxidation reaction and erosion of the amorphous carbon to form pure platinum. Purification proceeds from the top down and is likely catalytically facilitated via the evolving platinum layer. Thermal simulations suggest a temperature threshold of ~485 K, and the purification rate is a function of the PtC5 thickness (80–360 nm) and laser pulse width (1–100 μs) in the ranges studied. The thickness dependence is attributed to the ~235 nm penetration depth of the PtC5 composite at the laser wavelength, and the pulse-width dependence is attributedmore » to the increased temperatures achieved at longer pulse widths. Finally, remarkably fast purification is realized at cumulative laser exposure times of less than 1 s.« less

  2. Purification of Nanoscale Electron-Beam-Induced Platinum Deposits via a Pulsed Laser-Induced Oxidation Reaction

    SciTech Connect

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; Fowlkes, Jason Davidson; Roberts, Nicholas A.; Plank, Harald; Rack, Philip D.

    2014-11-05

    Platinum–carbon deposits made via electron-beam-induced deposition were purified in this study via a pulsed laser-induced oxidation reaction and erosion of the amorphous carbon to form pure platinum. Purification proceeds from the top down and is likely catalytically facilitated via the evolving platinum layer. Thermal simulations suggest a temperature threshold of ~485 K, and the purification rate is a function of the PtC5 thickness (80–360 nm) and laser pulse width (1–100 μs) in the ranges studied. The thickness dependence is attributed to the ~235 nm penetration depth of the PtC5 composite at the laser wavelength, and the pulse-width dependence is attributed to the increased temperatures achieved at longer pulse widths. Finally, remarkably fast purification is realized at cumulative laser exposure times of less than 1 s.

  3. Reversible wettability of electron-beam deposited indium-tin-oxide driven by ns-UV irradiation

    SciTech Connect

    Persano, Luana; Del Carro, Pompilio; Pisignano, Dario

    2012-04-09

    Indium tin oxide (ITO) is one of the most widely used semiconductor oxides in the field of organic optoelectronics, especially for the realization of anode contacts. Here the authors report on the control of the wettability properties of ITO films deposited by reactive electron beam deposition and irradiated by means of nanosecond-pulsed UV irradiation. The enhancement of the surface water wettability, with a reduction of the water contact angle larger than 50 deg., is achieved by few tens of seconds of irradiation. The analyzed photo-induced wettability change is fully reversible in agreement with a surface-defect model, and it can be exploited to realize optically transparent, conductive surfaces with controllable wetting properties for sensors and microfluidic circuits.

  4. Properties of optical thin films and coatings prepared by reactive electron-beam deposition with and without ion bombardments

    NASA Astrophysics Data System (ADS)

    Tsai, Rung Y.; Shiau, Sen C.; Lee, Chii H.; Ho, Fang C.; Hua, Mu-Yi

    1997-12-01

    The structural, microstructural, optical, and mechanical properties of MgF2, SiO2, and TiO2 films prepared by reactive electron-beam deposition (EBD) and reactive ion- assisted deposition (IAD) were systematically investigated using an x-ray diffractometer (XRD), a transmission electron microscope, a spectrophotometer, and a microhardness tester, respectively. A mixture gas of pure argon and pure oxygen was used as the reactant. The mean ion energy was about 90 eV for the IAD process. Results show that the preferred orientation, refractive index, and hardness of the films were strongly influenced by ion bombardments, although the variations of the phases and grain sizes were insignificant. With the fixed x- ray incident angle of 2 deg, the measured preferred orientation of polycrystalline MgF2 films deposited on unheated glass substrate by IAD was [110], which was consistent with the powder XRD pattern of MgF2, whereas that of the film deposited by EBD at a substrate temperature of 280 degrees Celsius was [111]. The refractive index and hardness of the films deposited by IAD were always higher than those of the respective films deposited by EBD at a substrate temperature of 280 degrees Celsius, which were due to the higher packing density caused by energetic ion bombardments. A 24-layer near-IR cutoff filter of alternating SiO2 and TiO2 layers prepared by IAD was more efficient on near-IR isolation and more thermally stable than that prepared by EBD. The optical thickness variation for the filter prepared by IAD over a substrate holder radius of 30 cm was less than 1%.

  5. Nickel oxide and molybdenum oxide thin films for infrared imaging prepared by biased target ion-beam deposition

    NASA Astrophysics Data System (ADS)

    Jin, Yao; Saint John, David; Jackson, Tom N.; Horn, Mark W.

    2014-06-01

    Vanadium oxide (VOx) thin films have been intensively used as sensing materials for microbolometers. VOx thin films have good bolometric properties such as low resistivity, high negative temperature coefficient of resistivity (TCR) and low 1/f noise. However, the processing controllability of VOx fabrication is difficult due to the multiple valence states of vanadium. In this study, metal oxides such as nickel oxide (NiOx) and molybdenum oxide (MoOx) thin films have been investigated as possible new microbolometer sensing materials with improved process controllability. Nickel oxide and molybdenum oxide thin films were prepared by reactive sputtering of nickel and molybdenum metal targets in a biased target ion beam deposition tool. In this deposition system, the Ar+ ion energy (typically lower than 25 eV) and the target bias voltage can be independently controlled since ions are remotely generated. A residual gas analyzer (RGA) is used to precisely control the oxygen partial pressure. A real-time spectroscopic ellipsometry is used to monitor the evolution of microstructure and properties of deposited oxides during growth and post-deposition. The properties of deposited oxide thin films depend on processing parameters. The resistivity of the NiOx thin films is in the range of 0.5 to approximately 100 ohm-cm with a TCR from -2%/K to -3.3%/K, where the resistivity of MoOx is between 3 and 2000 ohm-cm with TCR from -2.1%/K to -3.2%/K. We also report on the thermal stability of these deposited oxide thin films.

  6. Optical properties of nanocrystalline Y2O3 thin films grown on quartz substrates by electron beam deposition

    NASA Astrophysics Data System (ADS)

    Wiktorczyk, Tadeusz; Biegański, Piotr; Serafińczuk, Jarosław

    2016-09-01

    Yttrium oxide thin films of a thickness 221-341 nm were formed onto quartz substrates by reactive physical vapor deposition in an oxygen atmosphere. An electron beam gun was applied as a deposition source. The effect of substrate temperature during film deposition (in the range of 323-673 K) on film structure, surface morphology and optical properties was investigated. The surface morphology studies (with atomic force microscopy and diffuse spectra reflectivity) show that the film surface was relatively smooth with RMS surface roughness in the range of 1.7-3.8 nm. XRD analysis has revealed that all diffraction lines belong to a cubic Y2O3 structure. The films consisted of small nanocrystals. Their average grain size increases from 1.6 nm to 22 nm, with substrate temperature rising from 323 K to 673 K. Optical examinations of transmittance and reflectance were performed in the spectral range of 0.2-2.5 μm. Optical constants and their dispersion curves were determined. Values of the refractive index of the films were in the range of n = 1.79-1.90 (at 0.55 μm) for substrate temperature during film deposition of 323-673 K. The changes in the refractive index upon substrate temperature correspond very well with the increase in the nanocrystals grain diameter and with film porosity.

  7. Free vibration analysis of microtubules based on the molecular mechanics and continuum beam theory.

    PubMed

    Zhang, Jin; Wang, Chengyuan

    2016-10-01

    A molecular structural mechanics (MSM) method has been implemented to investigate the free vibration of microtubules (MTs). The emphasis is placed on the effects of the configuration and the imperfect boundaries of MTs. It is shown that the influence of protofilament number on the fundamental frequency is strong, while the effect of helix-start number is almost negligible. The fundamental frequency is also found to decrease as the number of the blocked filaments at boundaries decreases. Subsequently, the Euler-Bernoulli beam theory is employed to reveal the physics behind the simulation results. Fitting the Euler-Bernoulli beam into the MSM data leads to an explicit formula for the fundamental frequency of MTs with various configurations and identifies a possible correlation between the imperfect boundary conditions and the length-dependent bending stiffness of MTs reported in experiments. PMID:26564172

  8. Energy spreading and angular distribution of a beam of electrons in molecular hydrogen

    NASA Technical Reports Server (NTRS)

    Heaps, M. G.; Green, A. E. S.

    1975-01-01

    A Monte Carlo approach is used to obtain the energy spreading and angular distribution of initially monoenergetic and monodirectional beams of electron incident on a gas of molecular hydrogen. Several beams of primary electrons and the resultant secondaries are degraded in a step-by-step procedure which utilizes a detailed set of cross sections, together with reasonable approximations for the creation of secondary electrons. Particular attention is paid to the initial angular distribution of secondary electrons. An analytic function which characterizes current experimental differential cross-section data is used to provide realistic inputs into our calculations. The results for energy distribution as a function of distance and angular distribution at selected energies and distances are illustrated.

  9. Free vibration analysis of microtubules based on the molecular mechanics and continuum beam theory.

    PubMed

    Zhang, Jin; Wang, Chengyuan

    2016-10-01

    A molecular structural mechanics (MSM) method has been implemented to investigate the free vibration of microtubules (MTs). The emphasis is placed on the effects of the configuration and the imperfect boundaries of MTs. It is shown that the influence of protofilament number on the fundamental frequency is strong, while the effect of helix-start number is almost negligible. The fundamental frequency is also found to decrease as the number of the blocked filaments at boundaries decreases. Subsequently, the Euler-Bernoulli beam theory is employed to reveal the physics behind the simulation results. Fitting the Euler-Bernoulli beam into the MSM data leads to an explicit formula for the fundamental frequency of MTs with various configurations and identifies a possible correlation between the imperfect boundary conditions and the length-dependent bending stiffness of MTs reported in experiments.

  10. Three-dimensional ordering of cold ion beams in a storage ring: A molecular-dynamics simulation study

    SciTech Connect

    Yuri, Yosuke

    2015-06-29

    Three-dimensional (3D) ordering of a charged-particle beams circulating in a storage ring is systematically studied with a molecular-dynamics simulation code. An ion beam can exhibit a 3D ordered configuration at ultralow temperature as a result of powerful 3D laser cooling. Various unique characteristics of the ordered beams, different from those of crystalline beams, are revealed in detail, such as the single-particle motion in the transverse and longitudinal directions, and the dependence of the tune depression and the Coulomb coupling constant on the operating points.

  11. Industrial ion source technology. [for ion beam etching, surface texturing, and deposition

    NASA Technical Reports Server (NTRS)

    Kaufman, H. R.

    1977-01-01

    Plasma probe surveys were conducted in a 30-cm source to verify that the uniformity in the ion beam is the result of a corresponding uniformity in the discharge-chamber plasma. A 15 cm permanent magnet multipole ion source was designed, fabricated, and demonstrated. Procedures were investigated for texturing a variety of seed and surface materials for controlling secondary electron emission, increasing electron absorption of light, and improved attachment of biological tissue for medical implants using argon and tetrafluoromethane as the working gases. The cross section for argon-argon elastic collisions in the ion-beam energy range was calculated from interaction potentials and permits calculation of beam interaction effects that can determine system pumping requirements. The data also indicate that different optimizations of ion-beam machines will be advantageous for long and short runs, with 1 mA-hr/cm being the rough dividing line for run length. The capacity to simultaneously optimize components in an ion-beam machine for a single application, a capacity that is not evident in competitive approaches such as diode sputtering is emphasized.

  12. Molecular beam mass spectrometry with tunable vacuum ultraviolet (VUV) synchrotron radiation

    SciTech Connect

    Golan, Amir; Ahmed, Musahid

    2012-01-01

    Tunable soft ionization coupled to mass spectroscopy is a powerful method to investigate isolated molecules, complexes and clusters and their spectroscopy and dynamics.[1-4] Fundamental studies of photoionization processes of biomolecules provide information about electronic structure of these systems. Furthermore determinations of ionization energies and other properties of biomolecules in the gas phase are not trivial, and these experiments provide a platform to generate these data. We have developed a thermal vaporization technique coupled with supersonic molecular beams that provides a gentle way to transport these species into the gas phase. Judicious combination of source gas and temperature allows for formation of dimers and higher clusters of the DNA bases. The focus of this particular work is on the effects of non-covalent interactions, i.e., hydrogen bonding, stacking, and electrostatic interactions, on the ionization energies and proton transfer of individual biomolecules, their complexes and upon micro-hydration by water.[1, 5-9] We have performed experimental and theoretical characterization of the photoionization dynamics of gas-phase uracil and 1,3-methyluracil dimers using molecular beams coupled with synchrotron radiation at the Chemical Dynamics Beamline[10] located at the Advanced Light Source and the experimental details are visualized here. This allowed us to observe the proton transfer in 1,3-dimethyluracil dimers, a system with pi stacking geometry and with no hydrogen bonds[1]. Molecular beams provide a very convenient and efficient way to isolate the sample of interest from environmental perturbations which in return allows accurate comparison with electronic structure calculations[11, 12]. By tuning the photon energy from the synchrotron, a photoionization efficiency (PIE) curve can be plotted which informs us about the cationic electronic states. These values can then be compared to theoretical models and calculations and in turn, explain

  13. Effect of Indium-Oxide Deposited Using an Oxygen Ion-Beam-Assisted-Deposition to Top-Emitting Organic Light-Emitting Diodes

    NASA Astrophysics Data System (ADS)

    Jeong, Chang Hyun; Lim, Jong Tae; Lee, June Hee; Kim, Mi Suk; Bae, Jeong Woon; Yeom, Geun Young

    2006-10-01

    Indium oxide thin films have potential applications as cathodes in top-emitting organic light-emitting diodes (TEOLEDs). This study examined the characteristics of transparent conducting indium oxide (IO) films deposited by an oxygen ion-beam-assisted-deposition (IBAD) as a function of the applied oxygen ion energy (Va). When TEOLED devices consisting of glass/Ag (100 nm)/ITO (125 nm)/2-TNATA (30 nm)/NPB (15 nm)/Alq3 (55 nm)/LiF (1 nm)/Al (2 nm)/Au (20 nm)/IO (100 nm) were fabricated at a lower Va, a lower turn-on voltage was observed even though the maximum luminance (32,000 cd/m2) was similar one another. A Va of approximately +50 V produced an IO film with a resistivity of 8.5× 10-4 Ω\\cdotcm and a transmittance of 85%. The definition (I-V) characteristics of TEOLED devices with a cathode layer of Al (2 nm)/Au (20 nm)/IO (100 nm) were similar to the device fabricated with Al (2 nm)/Au (20 nm) only.

  14. Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Meng, Jun Hua; Zhang, Xing Wang; Wang, Hao Lin; Ren, Xi Biao; Jin, Chuan Hong; Yin, Zhi Gang; Liu, Xin; Liu, Heng

    2015-09-01

    Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were obtained by using the continuous h-BN film as a substrate. Furthermore, the well-designed sub-bilayered h-BN substrates provide direct evidence that the monolayered h-BN on Cu exhibits higher catalytic activity than the bilayered h-BN on Cu. The growth method applied here may have great potential in the scalable preparation of large-area high-quality graphene/h-BN heterostructures.Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were

  15. Crystallographic dependence of photocatalytic activity of WO3 thin films prepared by molecular beam epitaxy.

    PubMed

    Li, Guoqiang; Varga, Tamas; Yan, Pengfei; Wang, Zhiguo; Wang, Chongmin; Chambers, Scott A; Du, Yingge

    2015-06-21

    We investigated the impact of crystallographic orientation on the photocatalytic activity of single crystalline WO3 thin films prepared by molecular beam epitaxy on the photodegradation of rhodamine B (RhB). A clear effect is observed, with (111) being the most reactive surface, followed by (110) and (001). Photoreactivity is directly correlated with the surface free energy determined by density functional theory calculations. The RhB photodegradation mechanism is found to involve hydroxyl radicals in solution formed from photo-generated holes and differs from previous studies performed on nanoparticles and composites.

  16. Silicon sheet with molecular beam epitaxy for high efficiency solar cells

    NASA Technical Reports Server (NTRS)

    Allen, F. G.

    1983-01-01

    The capabilities of the new technique of Molecular Beam Epitaxy (MBE) are applied to the growth of high efficiency silicon solar cells. Because MBE can provide well controlled doping profiles of any desired arbitrary design, including doping profiles of such complexity as built-in surface fields or tandem junction cells, it would appear to be the ideal method for development of high efficiency solar cells. It was proposed that UCLA grow and characterize silicon films and p-n junctions of MBE to determine whether the high crystal quality needed for solar cells could be achieved.

  17. A molecular beam investigation of the oxidation of CO on Pt/9/111/x/100//

    NASA Technical Reports Server (NTRS)

    Fair, J. A.; Madix, R. J.

    1980-01-01

    The CO oxidation on Pt/9(111)x(100)/ was studied by molecular beam relaxation spectroscopy (MBRS). The reaction proceeded via the reaction of adsorbed CO and adsorbed oxygen. No evidence for direct reactive collisions between gaseous CO and adsorbed atomic oxygen was seen. The second order rate constant was measured by linearizing the reaction system to be 10 to the -7th exp/-(9700 kcal/mole)RT/ per sq cm s. The relatively low pre-exponential factor was explained by transition state theory on the basis of a high partition function for adsorbed carbon monoxide obtained previously from studies of CO desorption on this surface.

  18. Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping

    NASA Technical Reports Server (NTRS)

    Bhattacharya, P. K.; Dhar, S.; Berger, P.; Juang, F.-Y.

    1986-01-01

    A study has been made of the effects of adding small amounts of In (0.2-1.2 pct) to GaAs grown by molecular beam epitaxy. The density of four electron traps decreases in concentration by an order of magnitude, and the peak intensities of prominent emissions in the excitonic spectra are reduced with increase in In content. Based on the higher surface migration rate of In, compared to Ga, at the growth temperatures it is apparent that the traps and the excitonic transitions are related to point defects. This agrees with earlier observations by Briones and Collins (1982) and Skromme et al. (1985).

  19. Site-controlled Ag nanocrystals grown by molecular beam epitaxy-Towards plasmonic integration technology

    SciTech Connect

    Urbanczyk, Adam; Noetzel, Richard

    2012-12-15

    We demonstrate site-controlled growth of epitaxial Ag nanocrystals on patterned GaAs substrates by molecular beam epitaxy with high degree of long-range uniformity. The alignment is based on lithographically defined holes in which position controlled InAs quantum dots are grown. The Ag nanocrystals self-align preferentially on top of the InAs quantum dots. No such ordering is observed in the absence of InAs quantum dots, proving that the ordering is strain-driven. The presented technique facilitates the placement of active plasmonic nanostructures at arbitrarily defined positions enabling their integration into complex devices and plasmonic circuits.

  20. Gallium Arsenide Layers Grown by Molecular Beam Epitaxy on Single Crystalline Germanium Islands on Insulator

    NASA Astrophysics Data System (ADS)

    Takai, Mikio; Tanigawa, Takaho; Minamisono, Tadanori; Gamo, Kenji; Namba, Susumu

    1984-05-01

    Gallium arsenide (GaAs) layers have successfully been grown by molecular beam epitaxy on single crystalline germanium (Ge) islands, recrystallized by zone melting with SiO2 capping layers, on thermally-oxidized Si-wafers. The GaAs layers, grown on the single crystalline Ge islands, show smooth surfaces without any grain-boundaries, while those, grown on the Ge islands with grain-boundaries and on the SiO2, have grain-boundaries. The GaAs layers on the single crystalline Ge islands emit photoluminescence, the intensity of which is almost comparable to that of GaAs layers on bulk Ge crystals.

  1. Supersonic molecular beam injection effects on tokamak plasma applied non-axisymmetric magnetic perturbation

    NASA Astrophysics Data System (ADS)

    Han, Hyunsun; In, Y.; Jeon, Y. M.; Lee, H. Y.; Hahn, S. H.; Lee, K. D.; Nam, Y. U.; Yoon, S. W.

    2016-08-01

    The change of tokamak plasma behavior by supersonic molecular beam injection (SMBI) was investigated by applying a three-dimensional magnetic perturbation that could suppress edge localized modes (ELMs). From the time trace of decreasing electron temperature and with increasing plasma density keeping the total confined energy constant, the SMBI seems to act as a cold pulse on the plasma. However, the ELM behaviors were changed drastically (i.e., the symptom of ELM suppression has disappeared). The plasma collisionality in the edge-pedestal region could play a role in the change of the ELM behaviors.

  2. Graphitic carbon growth on crystalline and amorphous oxide substrates using molecular beam epitaxy

    PubMed Central

    2011-01-01

    We report graphitic carbon growth on crystalline and amorphous oxide substrates by using carbon molecular beam epitaxy. The films are characterized by Raman spectroscopy and X-ray photoelectron spectroscopy. The formations of nanocrystalline graphite are observed on silicon dioxide and glass, while mainly sp2 amorphous carbons are formed on strontium titanate and yttria-stabilized zirconia. Interestingly, flat carbon layers with high degree of graphitization are formed even on amorphous oxides. Our results provide a progress toward direct graphene growth on oxide materials. PACS: 81.05.uf; 81.15.Hi; 78.30.Ly. PMID:22029707

  3. Molecular-Beam Epitaxy Of CrSi2 on Si(111)

    NASA Technical Reports Server (NTRS)

    Fathauer, Robert W.; Grunthaner, Paula J.; Lin, True-Lon; Jamieson, David N.; Mazur, Jurek H.

    1989-01-01

    Crystalline layers grown in commercial apparatus. Experiments show CrSi2 grown on (111) face of single-crystal Si substrate by molecular-beam epitaxy. Epitaxial CrSi2 produced thus far not in desired single-crystal form. Because CrSi2 semiconductor with band gap of 0.3 eV, experimental process potential for monolitic integration of microelectronic devices based on CrSi2 (e.g., infrared detectors) with signal-processing circuitry based on Si.

  4. Characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Lo, Ikai; Pang, Wen-Yuan; Hsu, Yu-Chi; Hsieh, Chia-Ho; Shih, Cheng-Hung; Chou, Mitch M. C.; Chen, Wen-Yen; Hsu, Tzu-Min; Hsu, Gary Z. L.

    2013-06-15

    The characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy on LiAlO{sub 2} substrate was studied by cathodoluminescence and photoluminescence measurements. We demonstrated that the cathodoluminescence from oblique semi-polar surfaces of mushroom-shaped GaN was much brighter than that from top polar surface due to the reduction of polarization field on the oblique semi-polar surfaces. It implies that the oblique semi-polar surface is superior for the light-emitting surface of wurtzite nano-devices.

  5. Reaction Mechanism of Oxygen Atoms with Unsaturated Hydrocarbons by the Crossed-Molecular-Beams Method

    DOE R&D Accomplishments Database

    Buss, R. J.; Baseman, R. J.; Guozhong, H.; Lee, Y. T.

    1982-04-01

    From a series of studies of the reaction of oxygen atoms with unsaturated hydrocarbons using the crossed molecular beam method, the dominant reaction mechanisms were found to be the simple substitution reactions with oxygen atoms replacing H, Cl, Br atom or alkyl groups. Complication due to secondary reaction was avoided by carrying out experiments under single collisions and observing primary products directly. Primary products were identified by measuring the angular and velocity distributions of products at all the mass numbers which could be detected by the mass spectrometer, and from comparison of these distributions, applying the requirement of energy and momentum conservation.

  6. Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds

    SciTech Connect

    Jungwirth, T.; Novak, V.; Cukr, M.; Zemek, J.; Marti, X.; Horodyska, P.; Nemec, P.; Holy, V.; Maca, F.; Shick, A. B.; Masek, J.; Kuzel, P.; Nemec, I.; Gallagher, B. L.; Campion, R. P.; Foxon, C. T.; Wunderlich, J.

    2011-01-15

    Our ab initio theory calculations predict a semiconducting band structure of I-Mn-V compounds. We demonstrate on LiMnAs that high-quality materials with group-I alkali metals in the crystal structure can be grown by molecular beam epitaxy. Optical measurements on the LiMnAs epilayers are consistent with the theoretical electronic structure. Our calculations also reproduce earlier reports of high antiferromagnetic ordering temperature and predict large, spin-orbit-coupling-induced magnetic anisotropy effects. We propose a strategy for employing antiferromagnetic semiconductors in high-temperature semiconductor spintronics.

  7. Growth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam epitaxy

    SciTech Connect

    Cai, Y.; Wong, T. L.; Chan, S. K.; Sou, I. K.; Wang, N.; Su, D. S.

    2008-12-08

    Ultrathin ZnSe nanowires grown by Au-catalyzed molecular-beam epitaxy show an interesting growth behavior of diameter dependence of growth rates. The smaller the nanowire diameter, the faster is its growth rate. This growth behavior is totally different from that of the nanowires with diameters greater than 60 nm and cannot be interpreted by the classical theories of the vapor-liquid-solid mechanism. For the Au-catalyzed nanowire growth at low temperatures, we found that the surface and interface incorporation and diffusion of the source atoms at the nanowire tips controlled the growth of ultrathin ZnSe nanowires.

  8. Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy

    SciTech Connect

    Zhang, Zhi; Xu, Hong-Yi; Guo, Ya-Nan; Liao, Zhi-Ming; Lu, Zhen-Yu; Chen, Ping-Ping; Shi, Sui-Xing; Lu, Wei; Zou, Jin

    2013-08-12

    In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.

  9. Note: A versatile mass spectrometer chamber for molecular beam and temperature programmed desorption experiments.

    PubMed

    Tonks, James P; Galloway, Ewan C; King, Martin O; Kerherve, Gwilherm; Watts, John F

    2016-08-01

    A dual purpose mass spectrometer chamber capable of performing molecular beam scattering (MBS) and temperature programmed desorption (TPD) is detailed. Two simple features of this design allow it to perform these techniques. First, the diameter of entrance aperture to the mass spectrometer can be varied to maximize signal for TPD or to maximize angular resolution for MBS. Second, the mass spectrometer chamber can be radially translated so that it can be positioned close to the sample to maximize signal or far from the sample to maximize angular resolution. The performance of this system is described and compares well with systems designed for only one of these techniques.

  10. Perspective: Extremely fine tuning of doping enabled by combinatorial molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wu, J.; Božović, I.

    2015-06-01

    Chemical doping provides an effective method to control the electric properties of complex oxides. However, the state-of-art accuracy in controlling doping is limited to about 1%. This hampers elucidation of the precise doping dependences of physical properties and phenomena of interest, such as quantum phase transitions. Using the combinatorial molecular beam epitaxy, we improve the accuracy in tuning the doping level by two orders of magnitude. We illustrate this novel method by two examples: a systematic investigation of the doping dependence of interface superconductivity, and a study of the competing ground states in the vicinity of the insulator-to-superconductor transition.

  11. Zinc-blende CrAs/GaAs multilayers grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Akinaga, H.; Mizuguchi, M.

    2004-12-01

    The epitaxial growth of zinc-blende CrAs/GaAs multilayers has been achieved by using the molecular-beam epitaxy method. The crystallographic quality was evaluated by reflection high-energy electron diffraction (RHEED) and cross-sectional transmission electron microscopy (TEM). The increase of the substrate temperature during growth up to 300 °C brings the RHEED pattern to a streak, in contrast to the case at 200 °C. TEM images show the atomically flat surface and interface of the multilayer.

  12. Molecular beam epitaxy growth and optical properties of single crystal Zn3N2 films

    NASA Astrophysics Data System (ADS)

    Wu, Peng; Tiedje, T.; Alimohammadi, H.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Wang, Cong

    2016-10-01

    Single crystal Zn3N2 films with (100) orientation have been grown by plasma-assisted molecular beam epitaxy on MgO and A-plane sapphire substrates with in situ optical reflectance monitoring of the growth. The optical bandgap was found to be 1.25-1.28 eV and an electron Hall mobility as high as 395 cm2 V-1 s-1 was measured. The films were n-type with carrier concentrations in the 1018-1019 cm-3 range.

  13. Lutetium-doped EuO films grown by molecular-beam epitaxy

    SciTech Connect

    Melville, A.; Heeg, T.; Mairoser, T.; Schmehl, A.; Shai, D. E.; Monkman, E. J.; Harter, J. W.; Hollaender, B.; Schubert, J.; Shen, K. M.; Mannhart, J.; Schlom, D. G.

    2012-05-28

    The effect of lutetium doping on the structural, electronic, and magnetic properties of epitaxial EuO thin films grown by reactive molecular-beam epitaxy is experimentally investigated. The behavior of Lu-doped EuO is contrasted with doping by lanthanum and gadolinium. All three dopants are found to behave similarly despite differences in electronic configuration and ionic size. Andreev reflection measurements on Lu-doped EuO reveal a spin-polarization of 96% in the conduction band, despite non-magnetic carriers introduced by 5% lutetium doping.

  14. Note: A versatile mass spectrometer chamber for molecular beam and temperature programmed desorption experiments

    NASA Astrophysics Data System (ADS)

    Tonks, James P.; Galloway, Ewan C.; King, Martin O.; Kerherve, Gwilherm; Watts, John F.

    2016-08-01

    A dual purpose mass spectrometer chamber capable of performing molecular beam scattering (MBS) and temperature programmed desorption (TPD) is detailed. Two simple features of this design allow it to perform these techniques. First, the diameter of entrance aperture to the mass spectrometer can be varied to maximize signal for TPD or to maximize angular resolution for MBS. Second, the mass spectrometer chamber can be radially translated so that it can be positioned close to the sample to maximize signal or far from the sample to maximize angular resolution. The performance of this system is described and compares well with systems designed for only one of these techniques.

  15. A laser and molecular beam mass spectrometer study of low-pressure dimethyl ether flames

    SciTech Connect

    Andrew McIlroy; Toby D. Hain; Hope A. Michelsen; Terrill A. Cool

    2000-12-15

    The oxidation of dimethyl ether (DME) is studied in low-pressure flames using new molecular beam mass spectrometer and laser diagnostics. Two 30.0-Torr, premixed DME/oxygen/argon flames are investigated with stoichiometries of 0.98 and 1.20. The height above burner profiles of nine stable species and two radicals are measured. These results are compared to the detailed chemical reaction mechanism of Curran and coworkers. Generally good agreement is found between the model and data. The largest discrepancies are found for the methyl radical profiles where the model predicts qualitatively different trends in the methyl concentration with stoichiometry than observed in the experiment.

  16. Note: A versatile mass spectrometer chamber for molecular beam and temperature programmed desorption experiments.

    PubMed

    Tonks, James P; Galloway, Ewan C; King, Martin O; Kerherve, Gwilherm; Watts, John F

    2016-08-01

    A dual purpose mass spectrometer chamber capable of performing molecular beam scattering (MBS) and temperature programmed desorption (TPD) is detailed. Two simple features of this design allow it to perform these techniques. First, the diameter of entrance aperture to the mass spectrometer can be varied to maximize signal for TPD or to maximize angular resolution for MBS. Second, the mass spectrometer chamber can be radially translated so that it can be positioned close to the sample to maximize signal or far from the sample to maximize angular resolution. The performance of this system is described and compares well with systems designed for only one of these techniques. PMID:27587173

  17. Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Zhang, Zhi; Lu, Zhen-Yu; Chen, Ping-Ping; Xu, Hong-Yi; Guo, Ya-Nan; Liao, Zhi-Ming; Shi, Sui-Xing; Lu, Wei; Zou, Jin

    2013-08-01

    In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.

  18. Fabrication of single TiO2 nanotube devices with Pt interconnections using electron- and ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Lee, Mingun; Cha, Dongkyu; Huang, Jie; Ha, Min-Woo; Kim, Jiyoung

    2016-06-01

    Device fabrication using nanostructured materials, such as nanotubes, requires appropriate metal interconnections between nanotubes and electrical probing pads. Here, electron-beam-assisted deposition (EBAD) and ion-beam-assisted deposition (IBAD) techniques for fabrication of Pt interconnections for single TiO2 nanotube devices are investigated. IBAD conditions were optimized to reduce the leakage current as a result of Pt spreading. The resistivity of the IBAD-Pt was about three orders of magnitude less than that of the EBAD-Pt, due to low carbon concentration and Ga doping, as indicated by X-ray photoelectron spectroscopy analysis. The total resistances of single TiO2 nanotube devices with EBAD- or IBAD-Pt interconnections were 3.82 × 1010 and 4.76 × 108 Ω, respectively. When the resistivity of a single nanotube is low, the high series resistance of EBAD-Pt cannot be ignored. IBAD is a suitable method for nanotechnology applications, such as photocatalysis and biosensors.

  19. High-throughput shadow mask printing of passive electrical components on paper by supersonic cluster beam deposition

    NASA Astrophysics Data System (ADS)

    Caruso, Francesco; Bellacicca, Andrea; Milani, Paolo

    2016-04-01

    We report the rapid prototyping of passive electrical components (resistors and capacitors) on plain paper by an additive and parallel technology consisting of supersonic cluster beam deposition (SCBD) coupled with shadow mask printing. Cluster-assembled films have a growth mechanism substantially different from that of atom-assembled ones providing the possibility of a fine tuning of their electrical conduction properties around the percolative conduction threshold. Exploiting the precise control on cluster beam intensity and shape typical of SCBD, we produced, in a one-step process, batches of resistors with resistance values spanning a range of two orders of magnitude. Parallel plate capacitors with paper as the dielectric medium were also produced with capacitance in the range of tens of picofarads. Compared to standard deposition technologies, SCBD allows for a very efficient use of raw materials and the rapid production of components with different shape and dimensions while controlling independently the electrical characteristics. Discrete electrical components produced by SCBD are very robust against deformation and bending, and they can be easily assembled to build circuits with desired characteristics. The availability of large batches of these components enables the rapid and cheap prototyping and integration of electrical components on paper as building blocks of more complex systems.

  20. Hydrolytic degradation of electron beam irradiated high molecular weight and non-irradiated moderate molecular weight PLLA.

    PubMed

    Loo, Say Chye Joachim; Tan, Hui Tong; Ooi, Chui Ping; Boey, Yin Chiang Freddy

    2006-05-01

    The purpose of this study is to examine the hydrolytic degradation of electron beam irradiated ring-opening polymerized (ROP) poly(l-lactide) (PLLA-ir) and non-irradiated melt polycondensation polymerized poly(l-lactic acid) (PLLA-pc). It was observed that irradiation increases the hydrolytic degradation rate constant for ROP PLLA. This was due to a more hydrophilic PLLA-ir, as a result of irradiation. The degradation rate constants (k) of PLLA-ir samples were also found to be similar, regardless of the radiation dose, and an empirically formulated equation relating hydrolytic degradation time span to radiation dose was derived. The k value for PLLA-pc was observed to be lower than that for PLLA-ir, though the latter had a higher molecular weight. This was due to the difference in degradation mechanism, in which PLLA-ir undergoes end group scission, through a back- biting mechanism, during hydrolysis and thus a faster hydrolysis rate. Electron beam irradiation, though accelerates the degradation of PLLA, has been shown to be useful in accurately controlling the hydrolytic time span of PLLA. This method of controlling the hydrolytic degradation time was by far an easier task than through melt polycondensation polymerization. This would allow PLLA to be used for drug delivery purposes or as a temporary implant that requires a moderate time span (3-6 months). PMID:16701888

  1. In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy

    NASA Astrophysics Data System (ADS)

    Lee, Jonghoon; Varshney, Vikas; Park, Jeongho; Farmer, Barry L.; Roy, Ajit K.

    2016-05-01

    Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested.Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon

  2. In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy

    NASA Astrophysics Data System (ADS)

    Lee, Jonghoon; Varshney, Vikas; Park, Jeongho; Farmer, Barry L.; Roy, Ajit K.

    2016-05-01

    Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested.Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon

  3. Plasma behaviour with hydrogen supersonic molecular beam and cluster jet injection in the HL-2A tokamak

    NASA Astrophysics Data System (ADS)

    Yao, Lianghua; Feng, Beibing; Chen, Chengyuan; Shi, Zhongbin; Yuan, Baoshan; Zhou, Yan; Duan, Xuru; Sun, Hongjuan; Lu, Jie; Jiao, Yiming; Ni, Guoquan; Lu, Haiyang; Xiao, Weiwen; Li, Wei; Pan, Yudong; Hong, Wenyu; Ran, Hong; Ding, Xuantong; Liu, Yong

    2007-11-01

    The experimental results of low pressure supersonic molecular beam injection (SMBI) fuelling on the HL-2A closed divertor indicate that during the period of pulsed SMBI the power density convected at the target plate surfaces was 0.4 times of that before or after the beam injection. An empirical scaling law used for the SMBI penetration depth for the HL-2A plasma was obtained. The cluster jet injection (CJI) is a new fuelling method which is based on and developed from the experiments of SMBI in the HL-1M tokamak. The hydrogen clusters are produced at liquid nitrogen temperature in a supersonic adiabatic expansion of moderate backing pressure gases into vacuum through a Laval nozzle and are measured by Rayleigh scattering. The measurement results have shown that the averaged cluster size of as large as hundreds of atoms was found at the backing pressures of more than 0.1 MPa. Multifold diagnostics gave coincidental evidence that when there was hydrogen CJI in the HL-2A plasma, a great deal of particles from the jet were deposited at a terminal area rather than uniformly ablated along the injecting path. SMB with clusters, which are like micro-pellets, will be of benefit for deeper fuelling, and its injection behaviour was somewhat similar to that of pellet injection. Both the particle penetration depth and the fuelling efficiency of the CJI were distinctly better than that of the normal SMBI under similar discharge operation. During hydrogen CJI or high-pressure SMBI, a combination of collision and radiative stopping forced the runaway electrons to cool down to thermal velocity due to such a massive fuelling.

  4. Deposition of metallic gallium on re-crystallized ceramic material during focused ion beam milling

    SciTech Connect

    Muñoz-Tabares, J.A.; Reyes-Gasga, J.

    2013-12-15

    We report a new kind of artifact observed in the preparation of a TEM sample of zirconia by FIB, which consists in the deposition of metallic gallium nano-dots on the TEM sample surface. High resolution TEM images showed a microstructure of fine equiaxed grains of ∼ 5 nm, with some of them possessing two particular characteristics: high contrast and well-defined fast Fourier transform. These grains could not be identified as any phase of zirconia but it was possible to identify them as gallium crystals in the zone axis [110]. Based on HRTEM simulations, the possible orientations between zirconia substrate and deposited gallium are discussed in terms of lattice mismatch and oxygen affinity. - Highlights: • We show a new type of artifact induced during preparation of TEM samples by FIB. • Deposition of Ga occurs due to its high affinity for oxygen. • Materials with small grain size (∼ 5 nm) could promote Ga deposition. • Small grain size permits the elastic accommodation of deposited Ga.

  5. Measuring the Density of a Molecular Cluster Injector via Visible Emission from an Electron Beam

    SciTech Connect

    Lundberg, D. P.; Kaita, R.; Majeski, R. M.; Stotler, D. P.

    2010-06-28

    A method to measure the density distribution of a dense hydrogen gas jet is pre- sented. A Mach 5.5 nozzle is cooled to 80K to form a flow capable of molecular cluster formation. A 250V, 10mA electron beam collides with the jet and produces Hα emission that is viewed by a fast camera. The high density of the jet, several 1016cm-3, results in substantial electron depletion, which attenuates the Hα emission. The attenuated emission measurement, combined with a simplified electron-molecule collision model, allows us to determine the molecular density profile via a simple iterative calculation.

  6. Titanium dioxide fine structures by RF magnetron sputter method deposited on an electron-beam resist mask

    NASA Astrophysics Data System (ADS)

    Hashiba, Hideomi; Miyazaki, Yuta; Matsushita, Sachiko

    2013-09-01

    Titanium dioxide (TiO2) has been draw attention for wide range of applications from photonic crystals for visible light range by its catalytic characteristics to tera-hertz range by its high refractive index. We present an experimental study of fabrication of fine structures of TiO2 with a ZEP electron beam resist mask followed by Ti sputter deposition techniques. A TiO2 thin layer of 150 nm thick was grown on an FTO glass substrate with a fine patterned ZEP resist mask by a conventional RF magnetron sputter method with Ti target. The deposition was carried out with argon-oxygen gases at a pressure of 5.0 x 10 -1 Pa in a chamber. During the deposition, ratio of Ar-O2 gas was kept to the ratio of 2:1 and the deposition ratio was around 0.5 Å/s to ensure enough oxygen to form TiO2 and low temperature to avoid deformation of fine pattern of the ZPU resist mask. Deposited TiO2 layers are white-transparent, amorphous, and those roughnesses are around 7 nm. Fabricated TiO2 PCs have wider TiO2 slabs of 112 nm width leaving periodic 410 x 410 nm2 air gaps. We also studied transformation of TiO2 layers and TiO2 fine structures by baking at 500 °C. XRD measurement for TiO2 shows that the amorphous TiO2 transforms to rutile and anatase forms by the baking while keeping the same profile of the fine structures. Our fabrication method can be one of a promising technique to optic devices on researches and industrial area.

  7. Dynamic modulation of electronic properties of graphene by localized carbon doping using focused electron beam induced deposition

    NASA Astrophysics Data System (ADS)

    Kim, S.; Russell, M.; Henry, M.; Kim, S. S.; Naik, R. R.; Voevodin, A. A.; Jang, S. S.; Tsukruk, V. V.; Fedorov, A. G.

    2015-09-01

    We report on the first demonstration of controllable carbon doping of graphene to engineer local electronic properties of a graphene conduction channel using focused electron beam induced deposition (FEBID). Electrical measurements indicate that an ``n-p-n'' junction on graphene conduction channel is formed by partial carbon deposition near the source and drain metal contacts by low energy (<50 eV) secondary electrons due to inelastic collisions of long range backscattered primary electrons generated from a low dose of high energy (25 keV) electron beam (1 × 1018 e- per cm2). Detailed AFM imaging provides direct evidence of the new mechanism responsible for dynamic evolution of the locally varying graphene doping. The FEBID carbon atoms, which are physisorbed and weakly bound to graphene, diffuse towards the middle of graphene conduction channel due to their surface chemical potential gradient, resulting in negative shift of Dirac voltage. Increasing a primary electron dose to 1 × 1019 e- per cm2 results in a significant increase of carbon deposition, such that it covers the entire graphene conduction channel at high surface density, leading to n-doping of graphene channel. Collectively, these findings establish a unique capability of FEBID technique to dynamically modulate the doping state of graphene, thus enabling a new route to resist-free, ``direct-write'' functional patterning of graphene-based electronic devices with potential for on-demand re-configurability.We report on the first demonstration of controllable carbon doping of graphene to engineer local electronic properties of a graphene conduction channel using focused electron beam induced deposition (FEBID). Electrical measurements indicate that an ``n-p-n'' junction on graphene conduction channel is formed by partial carbon deposition near the source and drain metal contacts by low energy (<50 eV) secondary electrons due to inelastic collisions of long range backscattered primary electrons generated

  8. Correlation between properties of HfO2 films and preparing parameters by ion beam sputtering deposition.

    PubMed

    Liu, Huasong; Jiang, Yugang; Wang, Lishuan; Leng, Jian; Sun, Peng; Zhuang, Kewen; Ji, Yiqin; Cheng, Xinbin; Jiao, Hongfei; Wang, Zhanshan; Wu, Bingjun

    2014-02-01

    Ion beam sputtering is one of the most important technologies for preparing hafnium dioxide thin films. In this paper, the correlation between properties of hafnium dioxide thin films and preparing parameters was systematically researched by using the orthogonal experiment design method. The properties of hafnium oxide films (refractive index, extinction coefficient, deposition rate, stress, and inhomogeneity of refractive index) were studied. The refractive index, extinction coefficient, physical thickness, and inhomogeneity of refractive index were obtained by the multiple wavelength curve-fitting method from the reflectance and transmittance of single layers. The stress of thin film was measured by elastic deformation of the thin film-substrate system. An orthogonal experimental strategy was designed using substrate temperature, ion beam voltage, ion beam current, and oxygen flow rate as the variables. The experimental results indicated that the temperature of the substrate is the key influencing parameter on the properties of hafnium oxide films, while other preparing parameters are also correlated with specific properties. The experimental results are significant for selecting proper parameters for preparing hafnium oxide films with different applications.

  9. Selective-area epitaxial growth of GaAs in deep dielectric windows using molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Loke, W. K.; Yoon, S. F.; Zheng, H. Q.

    2001-01-01

    An improved selective-area epitaxial growth process for GaAs in deep dielectric windows (DDWs) is reported. The growth was carried out on (100)-oriented semi-insulating (SI) GaAs substrate at ˜520°C by solid source molecular beam epitaxy (SSMBE) using a valved arsenic cracker source. Dielectric stacks with 10 periods of alternating silicon nitride (2000 Å) and silicon dioxide (1000 Å) layers were deposited using plasma-enhanced chemical vapor deposition (PECVD) for the formation of deep (3 μm) dielectric windows. The alternating dielectric layer stack has been shown to be of greater stability than a single dielectric layer for the purpose of forming the DDW. A process of fabricating the DDW structures, which eliminates the possible contamination at the growth area during photoresist patterning and removing, and subsequent etching of the DDW, has resulted in improved epitaxial layer quality. Micro-Raman spectroscopy measurements showed a significant increase in the longitudinal-optic (LO) to transverse-optic (TO) signal intensity ratio ( ILO/TO) from ˜4.0 to ˜16.0 of the first-order Raman line of GaAs. Supporting evidence from low-temperature (4 K) photoluminescence (PL) showed a reduction in intensity of the conduction band to neutral carbon acceptor (e-C°) emission by a factor of 4.5. This suggests lower levels of carbon contamination originating from the improved fabrication process of the DDW. Scanning electron microscopy (SEM) images showed smoother surface morphology of the GaAs inside the DDW area. These results have important implications on the process of MBE regrowth for optoelectronics integration.

  10. Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on Molecular Beam Epitaxy Grown WSe2 Monolayers and Bilayers.

    PubMed

    Park, Jun Hong; Vishwanath, Suresh; Liu, Xinyu; Zhou, Huawei; Eichfeld, Sarah M; Fullerton-Shirey, Susan K; Robinson, Joshua A; Feenstra, Randall M; Furdyna, Jacek; Jena, Debdeep; Xing, Huili Grace; Kummel, Andrew C

    2016-04-26

    The effect of air exposure on 2H-WSe2/HOPG is determined via scanning tunneling microscopy (STM). WSe2 was grown by molecular beam epitaxy on highly oriented pyrolytic graphite (HOPG), and afterward, a Se adlayer was deposited in situ on WSe2/HOPG to prevent unintentional oxidation during transferring from the growth chamber to the STM chamber. After annealing at 773 K to remove the Se adlayer, STM images show that WSe2 layers nucleate at both step edges and terraces of the HOPG. Exposure to air for 1 week and 9 weeks caused air-induced adsorbates to be deposited on the WSe2 surface; however, the band gap of the terraces remained unaffected and nearly identical to those on decapped WSe2. The air-induced adsorbates can be removed by annealing at 523 K. In contrast to WSe2 terraces, air exposure caused the edges of the WSe2 to oxidize and form protrusions, resulting in a larger band gap in the scanning tunneling spectra compared to the terraces of air-exposed WSe2 monolayers. The preferential oxidation at the WSe2 edges compared to the terraces is likely the result of dangling edge bonds. In the absence of air exposure, the dangling edge bonds had a smaller band gap compared to the terraces and a shift of about 0.73 eV in the Fermi level toward the valence band. However, after air exposure, the band gap of the oxidized WSe2 edges became about 1.08 eV larger than that of the WSe2 terraces, resulting in the electronic passivation of the WSe2.

  11. Evaluation of Beam Loss and Energy Depositions for a Possible Phase II Design for LHC Collimation

    SciTech Connect

    Lari, L.; Assmann, R.; Bracco, C.; Brugger, M.; Cerutti, F.; Doyle, E.; Ferrari, A.; Keller, L.; Lundgren, S.; Markiewicz, Thomas W.; Mauri, M.; Redaelli, S.; Sarchiapone, L.; Smith, J.; Vlachoudis, V.; Weiler, T.; /CERN

    2011-11-07

    The LHC beams are designed to have high stability and to be stored for many hours. The nominal beam intensity lifetime is expected to be of the order of 20h. The Phase II collimation system has to be able to handle particle losses in stable physics conditions at 7 TeV in order to avoid beam aborts and to allow correction of parameters and restoration to nominal conditions. Monte Carlo simulations are needed in order to evaluate the behavior of metallic high-Z collimators during operation scenarios using a realistic distribution of losses, which is a mix of the three limiting halo cases. Moreover, the consequences in the IR7 insertion of the worst (case) abnormal beam loss are evaluated. The case refers to a spontaneous trigger of the horizontal extraction kicker at top energy, when Phase II collimators are used. These studies are an important input for engineering design of the collimation Phase II system and for the evaluation of their effect on adjacent components. The goal is to build collimators that can survive the expected conditions during LHC stable physics runs, in order to avoid quenches of the SC magnets and to protect other LHC equipments.

  12. Controllable Growth of Vertical Heterostructure GaTe(x)Se(1-x)/Si by Molecular Beam Epitaxy.

    PubMed

    Liu, Shanshan; Yuan, Xiang; Wang, Peng; Chen, Zhi-Gang; Tang, Lei; Zhang, Enze; Zhang, Cheng; Liu, Yanwen; Wang, Weiyi; Liu, Cong; Chen, Chen; Zou, Jin; Hu, Weida; Xiu, Faxian

    2015-08-25

    Two dimensional (2D) alloys, especially transition metal dichalcogenides, have attracted intense attention owing to their band-gap tunability and potential optoelectrical applications. Here, we report the controllable synthesis of wafer-scale, few-layer GaTexSe1-x alloys (0 ≤ x ≤ 1) by molecular beam epitaxy (MBE). We achieve a layer-by-layer growth mode with uniform distribution of Ga, Te, and Se elements across 2 in. wafers. Raman spectroscopy was carried out to explore the composition-dependent vibration frequency of phonons, which matches well with the modified random-element-isodisplacement model. Highly efficient photodiode arrays were also built by depositing few-layer GaTe0.64Se0.36 on n-type Si substrates. These p-n junctions have steady rectification characteristics with a rectifying ratio exceeding 300 and a high external quantum efficiency around 50%. We further measured more devices on MBE-grown GaTexSe1-x/Si heterostructures across the full range to explore the composition-dependent external quantum efficiency. Our study opens a new avenue for the controllable growth of 2D alloys with wafer-scale homogeneity, which is a prominent challenge in 2D material research.

  13. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    DOE PAGESBeta

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey J.; Wang, George T.

    2015-07-14

    In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an ordermore » of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.« less

  14. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    SciTech Connect

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey J.; Wang, George T.

    2015-07-14

    In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.

  15. Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy

    SciTech Connect

    Bratland, K. A.; Spila, T.; Cahill, D. G.; Greene, J. E.; Desjardins, P.

    2011-03-15

    Numerical simulations based on a discrete model describing step edge motion are used to compute the surface morphological evolution of Ge(001) layers deposited by low-temperature (T{sub s} = 45-230 deg. C) molecular beam epitaxy and to probe the relationship between surface roughening and the onset of epitaxial breakdown - the abrupt growth mode transition from epitaxial to amorphous - at temperature-dependent critical film thicknesses h{sub 1}(T{sub s}). Computed surface widths w and in-plane coherence lengths d as a function of layer thickness h exhibit good agreement with experimental values. Inspired by experimental results indicating that epitaxial breakdown is initiated at facetted interisland trenches as the surface roughness reaches a T{sub s}-independent overall aspect ratio, we show that simulated data for w/d = 0.03 correspond to thicknesses h{sub 1{proportional_to}} exp (-E{sub 1}/kT{sub s}) with E{sub 1} = 0.63 eV, a value equal to the Ge adatom diffusion activation energy on Ge(001). Simulated h{sub 1} values agree well with experimental data. Above a critical growth temperature of 170 deg. C, computed w/d values saturate at large film thicknesses, never reaching the critical aspect ratio w/d = 0.03. Thus, the model also predicts that epitaxial breakdown does not occur for T{sub s} > 170 deg. C as observed experimentally.

  16. Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

    SciTech Connect

    Oliveira, F.; Fischer, I. A.; Schulze, J.; Benedetti, A.; Zaumseil, P.; Cerqueira, M. F.; Vasilevskiy, M. I.; Stefanov, S.; Chiussi, S.

    2015-12-28

    We report on the fabrication and structural characterization of epitaxially grown ultra-thin layers of Sn on Ge virtual substrates (Si buffer layer overgrown by a 50 nm thick Ge epilayer followed by an annealing step). Samples with 1 to 5 monolayers of Sn on Ge virtual substrates were grown using solid source molecular beam epitaxy and characterized by atomic force microscopy. We determined the critical thickness at which the transition from two-dimensional to three-dimensional growth occurs. This transition is due to the large lattice mismatch between Ge and Sn (≈14.7%). By depositing Ge on top of Sn layers, which have thicknesses at or just below the critical thickness, we were able to fabricate ultra-narrow GeSn multi-quantum-well structures that are fully embedded in Ge. We report results on samples with one and ten GeSn wells separated by 5 and 10 nm thick Ge spacer layers that were characterized by high resolution transmission electron microscopy and X-ray diffraction. We discuss the structure and material intermixing observed in the samples.

  17. First-principles studies on molecular beam epitaxy growth of GaAs1-xBix

    DOE PAGESBeta

    Luo, Guangfu; Yang, Shujiang; Li, Jincheng; Arjmand, Mehrdad; Szlufarska, Izabela; Brown, April S.; Kuech, Thomas F.; Morgan, Dane

    2015-07-14

    We investigate the molecular beam epitaxy (MBE) growth of GaAs1-xBix film using density functional theory with spin-orbit coupling to understand the growth of this film, especially the mechanisms of Bi incorporation. We study the stable adsorption structures and kinetics of the incident molecules (As₂ molecule, Ga atom, Bi atom, and Bi₂ molecule) on the (2 x 1)-Gasub||Bi surface and a proposed q(1 x 1)-Gasub||AsAs surface has a quasi-(1 x 1) As layer above the Ga-terminated GaAs substrate and a randomly oriented As dimer layer on top. We obtain the desorption and diffusion barriers of the adsorbed molecules and also themore » reaction barriers of three key processes related to Bi evolution, namely, Bi incorporation, As/Bi exchange, and Bi clustering. The results help explain the experimentally observed dependence of Bi incorporation on the As/Ga ratio and growth temperature. Furthermore, we find that As₂ exchange with Bi of the (2 x 1)-Gasub||Bi surface is a key step controlling the kinetics of the Bi incorporation. Finally, we explore two possible methods to enhance the Bi incorporation, namely, replacing the MBE growth mode from codeposition of all fluxes with a sequential deposition of fluxes and applying asymmetric in-plane strain to the substrate.« less

  18. Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

    SciTech Connect

    Bazioti, C.; Kehagias, Th.; Pavlidou, E.; Komninou, Ph.; Karakostas, Th.; Dimitrakopulos, G. P.; Papadomanolaki, E.; Iliopoulos, E.; Walther, T.; Smalc-Koziorowska, J.

    2015-10-21

    We investigate the structural properties of a series of high alloy content InGaN epilayers grown by plasma-assisted molecular beam epitaxy, employing the deposition temperature as variable under invariant element fluxes. Using transmission electron microscopy methods, distinct strain relaxation modes were observed, depending on the indium content attained through temperature adjustment. At lower indium contents, strain relaxation by V-pit formation dominated, with concurrent formation of an indium-rich interfacial zone. With increasing indium content, this mechanism was gradually substituted by the introduction of a self-formed strained interfacial InGaN layer of lower indium content, as well as multiple intrinsic basal stacking faults and threading dislocations in the rest of the film. We show that this interfacial layer is not chemically abrupt and that major plastic strain relaxation through defect introduction commences upon reaching a critical indium concentration as a result of compositional pulling. Upon further increase of the indium content, this relaxation mode was again gradually succeeded by the increase in the density of misfit dislocations at the InGaN/GaN interface, leading eventually to the suppression of the strained InGaN layer and basal stacking faults.

  19. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Zheng, Jian-Guo; Liu, Jianlin

    2016-07-01

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5-6 nm)/G (26-27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ˜2.5-3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

  20. Oxygen plasma power dependence on ZnO grown on porous silicon substrates by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Nam, Giwoong; Kim, Min Su; Kim, Do Yeob; Yim, Kwang Gug; Kim, Soaram; Kim, Sung-O.; Lee, Dong-Yul; Leem, Jae-Young

    2012-10-15

    ZnO thin films were deposited on porous silicon by plasma-assisted molecular beam epitaxy using different radio frequency power settings. Optical emission spectrometry was applied to study the characteristics of the oxygen plasma, and the effects of the radio frequency power on the properties of the ZnO thin films were evaluated by X-ray diffraction, scanning electron microscopy, and photoluminescence. The grain sizes for radio frequency powers of 100, 200, and 300 W were 46, 48, and 62 nm, respectively. In addition, the photoluminescence intensities of the ultraviolet and the visible range increased at 300 W, because the density of the atomic oxygen transitions increased. The quality of the ZnO thin films was enhanced, but the deep-level emission peaks increased with increasing radio frequency power. The structural and optical properties of the ZnO thin films were improved at the radio frequency power of 300 W. Moreover, the optical properties of the ZnO thin films were improved with porous silicon, instead of Si.

  1. Nanocrystalline diamond thin films deposited from C60 monoenergetic fullerene ion beam.

    PubMed

    Pukha, V E; Stetsenko, A N; Dub, S N; Lee, J K

    2007-01-01

    Carbon films 250 division by 500 nm in thickness deposited on Si wafers from mass-selected flow of accelerated C60 ions with energies of 5.0 +/- 0.1 keV at temperatures of 300 K and 673 K are characterized by TEM and nanoindentation. On the TEM images of the films deposited at 673 K, nanocrystalline graphite with the typical grain size of -6 nm is observed. The films deposited at 300 K are transparent in visible light. TEM study of these films has revealed structural elements with lattice spacing close to that of diamond and the grain size of about 4 nm. Nanohardness and elastic modulus of the films prepared at a substrate temperature of 300 K were 23.1 +/- 0.2 GPa and 200 +/- 1 GPa, respectively. Possible mechanisms of the carbon films structure formation are suggested in the framework of a hydrodynamic shock wave model.

  2. Pulsed electron beam deposition of highly oriented thin films of polytetrafluoroethylene

    NASA Astrophysics Data System (ADS)

    Chandra, Vimlesh; Manoharan, Solomon S.

    2008-04-01

    Thin films of polytetrafluoroethylene (PTFE) were deposited by pulsed electron deposition (PED) technique. The transmission electron microscopy (TEM) image of the RT fabricated (20 Å thick) film on carbon coated copper grid shows crystalline nature. Infrared spectra show one to one correspondence between PED ablated film and the PTFE bulk target. The asymmetrical and symmetrical -CF 2- stretching modes were observed at 1220 and 1156 cm -1, respectively. The -CF 2- wagging and bending modes occur at 644 and 512 cm -1, respectively. X-ray diffraction patterns of the film deposited at room temperature (RT) show oriented film along (1 0 0) plane of hexagonal structure and the crystalline nature is retained up to 300 °C on vacuum annealing. The room temperature fabricated film shows smooth and pin hole free surface whereas post-annealing brings discontinuity, roughness and pin holes.

  3. Radially-Inflowing Molecular Gas Deposited by a X-ray Cooling Flow

    NASA Astrophysics Data System (ADS)

    Lim, Jeremy; Ao, Y.; Dinh, V.

    2006-12-01

    Galaxy clusters are immersed in hot X-ray-emitting gas that constitutes a large fraction of their baryonic mass. Radiative cooling of this gas, if not adequately balanced by heat input, should result in an inflow of cooler gas to the central dominant giant elliptical (cD) galaxy. Although a straightforward prediction made nearly twenty years ago, the occurrence of such X-ray cooling flows is widely questioned as gas at lower temperatures is often not found at the predicted quantities. The exceptions are cD galaxies harbouring large quantities of cool molecular gas, but the origin of this gas is uncertain as ram-pressure stripping or cannibalism of gas-rich cluster galaxies provide viable alternatives to cooling flows. Here, we present the most direct evidence yet for the deposition of molecular gas in a cD galaxy, Perseus A, from a X-ray cooling flow. The molecular gas detected in this galaxy is concentrated in three radial filaments with projected lengths of at least 2 kpc, one extending inwards close to the active nucleus and the other two extending outwards to at least 8 kpc on the east and west. All three filaments coincide with bright Hα features, and lie along a central X-ray ridge where any cooling flow is strongest. The two outer filaments exhibit increasingly blueshifted velocities at smaller radii that we show trace radial inflow along the gravitational potential of the galaxy. The innermost filament appears to be settling into the potential well, and may fuel the central supermassive black hole whose radio jets heat gas over a large solid angle in the north-south direction. Our results demonstrate that X-ray cooling flows can indeed deposit large quantities of cool gas, but only intermittently along directions where the X-ray gas is not being reheated.

  4. Electron beam pumped III-V nitride vertical cavity surface emitting lasers grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Ng, Hock Min

    The design and fabrication by molecular beam epitaxy of a prototype vertical cavity laser based on the III-V nitrides were investigated in this work. The bottom mirror of the laser consists of distributed Bragg reflectors (DBRs) based on quarterwave AlN (or AlxGa1-xN) and GaN layers. Such DBRs were designed for maximum reflectivity in the spectral region from 390--600 nm. The epitaxial growth of these two binaries on each other revealed that while AlN grows on GaN in a two-dimensional mode (Frank-van der Merwe mode), GaN grows on AlN in a three-dimensional mode (Stranski-Krastanov mode). In spite of that, DBRs with peak reflectance up to 99% and bandwidths of 45nm were fabricated. The measured reflectance spectra were compared with simulations using the transmission matrix method. The mechanical stability of these DBR structures due to non-uniform distribution of strain arising from lattice or thermal mismatch of the various components were also addressed. The active region of the laser consists of InGaN/GaN multiple quantum wells (MQWs). The existence of up to the third order diffraction peaks in the x-ray diffraction spectra suggests that the interfaces between InGaN and GaN are sharp with little interdiffusion at the growth temperature. The photoluminescence and cathodoluminescence spectra were analyzed to determine the optical quality of the MQWs. The best MQWs were shown to have a single emission peak at 397nm with full width half maximum (FWHM) of 11nm. Cathodoluminescence studies showed that there are spatially localized areas of intense light emission. The complete device was formed on (0001) sapphire substrates using the previously described DBRs as bottom mirrors and the MQWs as the active region. The top mirror of the device consists of metallic silver. The device was pumped by an electron beam from the top mirror side and the light output was collected from the sapphire side. Measurements at 100K showed narrowing of the linewidth with increasing pump

  5. Solar Ion Sputter Deposition in the Lunar Regolith: Experimental Simulation Using Focused-Ion Beam Techniques

    NASA Technical Reports Server (NTRS)

    Christoffersen, R.; Rahman, Z.; Keller, L. P.

    2012-01-01

    As regions of the lunar regolith undergo space weathering, their component grains develop compositionally and microstructurally complex outer coatings or "rims" ranging in thickness from a few 10 s to a few 100's of nm. Rims on grains in the finest size fractions (e.g., <20 m) of mature lunar regoliths contain optically-active concentrations of nm size metallic Fe spherules, or "nanophase Fe(sup o)" that redden and attenuate optical reflectance spectral features important in lunar remote sensing. Understanding the mechanisms for rim formation is therefore a key part of connecting the drivers of mineralogical and chemical changes in the lunar regolith with how lunar terrains are observed to become space weathered from a remotely-sensed point of view. As interpreted based on analytical transmission electron microscope (TEM) studies, rims are produced from varying relative contributions from: 1) direct solar ion irradiation effects that amorphize or otherwise modify the outer surface of the original host grain, and 2) nanoscale, layer-like, deposition of extrinsic material processed from the surrounding soil. This extrinsic/deposited material is the dominant physical host for nanophase Fe(sup o) in the rims. An important lingering uncertainty is whether this deposited material condensed from regolith components locally vaporized in micrometeorite or larger impacts, or whether it formed as solar wind ions sputtered exposed soil and re-deposited the sputtered ions on less exposed areas. Deciding which of these mechanisms is dominant, or possibility exclusive, has been hampered because there is an insufficient library of chemical and microstructural "fingerprints" to distinguish deposits produced by the two processes. Experimental sputter deposition / characterization studies relevant to rim formation have particularly lagged since the early post-Apollo experiments of Hapke and others, especially with regard to application of TEM-based characterization techniques. Here

  6. An ultra-compact, high-throughput molecular beam epitaxy growth system

    SciTech Connect

    Baker, A. A.; Hesjedal, T.; Braun, W. E-mail: fischer@createc.de; Rembold, S.; Fischer, A. E-mail: fischer@createc.de; Gassler, G.

    2015-04-15

    We present a miniaturized molecular beam epitaxy (miniMBE) system with an outer diameter of 206 mm, optimized for flexible and high-throughput operation. The three-chamber system, used here for oxide growth, consists of a sample loading chamber, a storage chamber, and a growth chamber. The growth chamber is equipped with eight identical effusion cell ports with linear shutters, one larger port for either a multi-pocket electron beam evaporator or an oxygen plasma source, an integrated cryoshroud, retractable beam-flux monitor or quartz-crystal microbalance, reflection high energy electron diffraction, substrate manipulator, main shutter, and quadrupole mass spectrometer. The system can be combined with ultrahigh vacuum (UHV) end stations on synchrotron and neutron beamlines, or equivalently with other complex surface analysis systems, including low-temperature scanning probe microscopy systems. Substrate handling is compatible with most UHV surface characterization systems, as the miniMBE can accommodate standard surface science sample holders. We introduce the design of the system, and its specific capabilities and operational parameters, and we demonstrate the epitaxial thin film growth of magnetoelectric Cr{sub 2}O{sub 3} on c-plane sapphire and ferrimagnetic Fe{sub 3}O{sub 4} on MgO (001)

  7. An ultra-compact, high-throughput molecular beam epitaxy growth system.

    PubMed

    Baker, A A; Braun, W; Gassler, G; Rembold, S; Fischer, A; Hesjedal, T

    2015-04-01

    We present a miniaturized molecular beam epitaxy (miniMBE) system with an outer diameter of 206 mm, optimized for flexible and high-throughput operation. The three-chamber system, used here for oxide growth, consists of a sample loading chamber, a storage chamber, and a growth chamber. The growth chamber is equipped with eight identical effusion cell ports with linear shutters, one larger port for either a multi-pocket electron beam evaporator or an oxygen plasma source, an integrated cryoshroud, retractable beam-flux monitor or quartz-crystal microbalance, reflection high energy electron diffraction, substrate manipulator, main shutter, and quadrupole mass spectrometer. The system can be combined with ultrahigh vacuum (UHV) end stations on synchrotron and neutron beamlines, or equivalently with other complex surface analysis systems, including low-temperature scanning probe microscopy systems. Substrate handling is compatible with most UHV surface characterization systems, as the miniMBE can accommodate standard surface science sample holders. We introduce the design of the system, and its specific capabilities and operational parameters, and we demonstrate the epitaxial thin film growth of magnetoelectric Cr2O3 on c-plane sapphire and ferrimagnetic Fe3O4 on MgO (001).

  8. An ultra-compact, high-throughput molecular beam epitaxy growth system

    NASA Astrophysics Data System (ADS)

    Baker, A. A.; Braun, W.; Gassler, G.; Rembold, S.; Fischer, A.; Hesjedal, T.

    2015-04-01

    We present a miniaturized molecular beam epitaxy (miniMBE) system with an outer diameter of 206 mm, optimized for flexible and high-throughput operation. The three-chamber system, used here for oxide growth, consists of a sample loading chamber, a storage chamber, and a growth chamber. The growth chamber is equipped with eight identical effusion cell ports with linear shutters, one larger port for either a multi-pocket electron beam evaporator or an oxygen plasma source, an integrated cryoshroud, retractable beam-flux monitor or quartz-crystal microbalance, reflection high energy electron diffraction, substrate manipulator, main shutter, and quadrupole mass spectrometer. The system can be combined with ultrahigh vacuum (UHV) end stations on synchrotron and neutron beamlines, or equivalently with other complex surface analysis systems, including low-temperature scanning probe microscopy systems. Substrate handling is compatible with most UHV surface characterization systems, as the miniMBE can accommodate standard surface science sample holders. We introduce the design of the system, and its specific capabilities and operational parameters, and we demonstrate the epitaxial thin film growth of magnetoelectric Cr2O3 on c-plane sapphire and ferrimagnetic Fe3O4 on MgO (001).

  9. Elevated temperature dependence of energy band gap of ZnO thin films grown by e-beam deposition

    SciTech Connect

    Rai, R. C.; Guminiak, M.; Wilser, S.; Cai, B.; Nakarmi, M. L.

    2012-04-01

    We report the surface, structural, electronic, and optical properties of the epitaxial ZnO thin films grown on (0001) sapphire substrate at 600 deg. C by an electron-beam deposition technique. ZnO thin films have been deposited in an oxygen environment and post-deposition annealed to improve the stoichiometry and the crystal quality. In order to investigate the free exciton binding energy and the temperature dependence of the energy bandgap, we carried out variable temperature (78-450 K) transmittance measurements on ZnO thin films. The absorption data below the energy bandgap have been modeled with the Urbach tail and a free exciton, while the data above the gap have been modeled with the charge transfer excitations. The exciton binding energy is measured to be E{sub 0}= 64 {+-} 7 meV, and the energy band gaps of the ZnO film are measured to be E{sub g}-tilde 3.51 and 3.48 eV at 78 and 300 K, respectively. The temperature dependence of the energy gap has been fitted with the Varshni model to extract the fitting parameters {alpha}= 0.00020 {+-} 0.00002 eV/K, {beta}= 325 {+-} 20 K, and E{sub g} (T = 0 K) = 3.516 {+-} 0.0002 eV.

  10. Durability of Solar Reflective Materials with an Alumina Hard Coat Produced by Ion-Beam-Assisted Deposition: Preprint

    SciTech Connect

    Kennedy, C. E.; Smilgys, R. V.

    2002-10-01

    A promising low-cost reflector material for solar concentrating power (CSP) generation is a silvered substrate protected by an alumina coating several microns thick. The alumina hard coat is deposited under high vacuum by ion-beam-assisted-deposition (IBAD). Samples of this material have been produced both by batch and continuous roll-coating processes. The substrate materials investigated were polyethylene terephthalate (PET), PET laminated to stainless-steel foil, and chrome-plated carbon steel strip. The advantage of steel strip compared to PET is that it withstands a higher process temperature and lowers the final product installation costs. In this paper, we compare the durability of batch and roll-coated reflective materials with an alumina deposition rate as high as 10 nm/s. In general, the durability of the samples is found to be excellent. Comparisons between accelerated and outdoor exposure testing results indicate that these front-surface mirrors are more susceptible to weather conditions not simulated by accelerated tests (i.e., rain, sleet, snow, etc.) than other types of solar reflectors. For long-term durability, edge protection will be necessary, and durability could be improved by the addition of an adhesion-promoting layer between the silver and alumina.

  11. Mechanical properties improvement of pulsed laser-deposited hydroxyapatite thin films by high energy ion-beam implantation

    NASA Astrophysics Data System (ADS)

    Nelea, V.; Pelletier, H.; Müller, D.; Broll, N.; Mille, P.; Ristoscu, C.; Mihailescu, I. N.

    2002-01-01

    Major problems in the hydroxyapatite (HA), Ca 5(PO 4) 3OH, thin films processing still keep the poor mechanical properties and the lack in density. We present a study on the feasibility of high energy ion-beam implantation technique to densify HA bioceramic films. Crystalline HA films were grown by pulsed laser deposition (PLD) method using an excimer KrF ∗ laser ( λ=248 nm, τ FWHM≥20 ns). The films were deposited on Ti-5Al-2.5Fe alloys substrates previously coated with a ceramic TiN buffer layer. After deposition the films were implanted with Ar + ions at high energy. Optical microscopy (OM), white light confocal microscopy (WLCM), grazing incidence X-ray diffraction (GIXRD) and Berkovich nanoindentation in normal and scratch options have been applied for the characterization of the obtained structures. We put into evidence an enhancement of the mechanical characteristics after implantation, while GIXRD measurements confirm that the crystalline structure of HA phase is preserved. The improvement in mechanical properties is an effect of a densification after ion treatment as a result of pores elimination and grains regrowth.

  12. A comparative study of the electrical properties of Pd/ZnO Schottky contacts fabricated using electron beam deposition and resistive/thermal evaporation techniques

    SciTech Connect

    Mtangi, W.; Auret, F. D.; Janse van Rensburg, P. J.; Coelho, S. M. M.; Legodi, M. J.; Nel, J. M.; Meyer, W. E.; Chawanda, A.

    2011-11-01

    A systematic investigation to check the quality of Pd Schottky contacts deposited on ZnO has been performed on electron beam (e-beam) deposited and resistively/thermally evaporated samples using current-voltage, IV, and conventional deep level transient spectroscopy (DLTS) measurements. Room temperature IV measurements reveal the dominance of pure thermionic emission on the resistively evaporated contacts, while the e-beam deposited contacts show the dominance of generation recombination at low voltages, <0.30 V, and the dominance of pure thermionic emission at high voltages, greater than 0.30 V. The resistively evaporated contacts have very low reverse currents of the order of 10{sup -10} A at a reverse voltage of 1.0 V whereas the e-beam deposited contacts have reverse currents of the order of 10{sup -6} A at 1.0 V. Average ideality factors have been determined as (1.43 {+-} 0.01) and (1.66 {+-} 0.02) for the resistively evaporated contacts and e-beam deposited contacts, respectively. The IV barrier heights have been calculated as (0.721 {+-} 0.002) eV and (0.624 {+-} 0.005) eV for the resistively evaporated and e-beam deposited contacts, respectively. Conventional DLTS measurements reveal the presence of three prominent defects in both the resistive and e-beam contacts. Two extra peaks with energy levels of 0.60 and 0.81 eV below the conduction band minimum have been observed in the e-beam deposited contacts. These have been explained as contributing to the generation recombination current that dominates at low voltages and high leakage currents. Based on the reverse current at 1.0 V, the degree of rectification, the dominant current transport mechanism and the observed defects, we conclude that the resistive evaporation technique yields better quality Schottky contacts for use in solar cells and ultraviolet detectors compared to the e-beam deposition technique. The 0.60 eV has been identified as possibly related to the unoccupied level for the doubly charged

  13. Development of a Silicon Carbide Molecular Beam Nozzle for Simulation Planetary Flybys and Low-Earth Orbit

    NASA Technical Reports Server (NTRS)

    Patrick, E. L.; Earle, G. D.; Kasprzak, W. T.; Mahaffy, Paul R.

    2008-01-01

    From commercial origins as a molybdenum molecular beam nozzle, a ceramic nozzle of silicon carbide (SiC) was developed for space environment simulation. The nozzle is mechanically stable under extreme conditions of temperature and pressure. A heated, continuous, supersonically-expanded hydrogen beam with a 1% argon seed produced an argon beam component of nearly 4 km/s, with an argon flux exceeding 1x1014 /cm2.s. This nozzle was part of a molecular beam machine used in the Atmospheric Experiments Branch at NASA Goddard Space Flight Center to characterize the performance of the University of Texas at Dallas Ram Wind Sensor (RWS) aboard the Air Force Communications/Navigation Outage Forecasting System (C/NOFS) launched in the Spring of 2008.

  14. Hyperthermal Pulsed-Laser Ablation Beams for Film Deposition and Surface Microstructural Engineering

    SciTech Connect

    Lowndes, D.H.

    1999-11-08

    This paper presents an overview of pulsed-laser ablation for film deposition and surface microstructure formation. By changing the ambient gas pressure from high vacuum to several Torr (several hundred Pa) and by selecting the pulsed-laser wavelength, the kinetic energy of ablated atoms/ions can be varied from several hundred eV down to {approximately}0.1 eV and films ranging from superhard to nanocrystalline may be deposited. Furthermore, cumulative (multi-pulse) irradiation of a semiconductor surface (e.g. silicon) in an oxidizing gas (0{sub 2}, SF{sub 6}) et atmospheric pressure can produce dense, self-organized arrays of high-aspect-ratio microcolumns or microcones. Thus, a wide range of materials synthesis and processing opportunities result from the hyperthermal flux and reactive growth conditions provided by pulsed-laser ablation.

  15. 1-D Van der Waals Foams Heated by Ion Beam Energy Deposition

    SciTech Connect

    Zylstra, A. B.; Barnard, J. J.; More, R. M.

    2009-12-23

    One dimensional simulations of various initial average density aluminum foams (modeled as slabs of solid metal separated by low density regions) heated by volumetric energy deposition are conducted with a Lagrangian hydrodynamics code using a van der Waals equation of tate (EOS). The resulting behavior is studied to facilitate the design of future warm dense matter (WDM) experiments at LBNL. In the simulations the energy deposition ranges from 10 to 30 kJ/g and from 0.075 to 4.0 ns total pulse length, resulting in temperatures from approximately 1 o 4 eV. We study peak pressures and temperatures in the foams, expansion velocity, and the phase evolution. Five relevant time scales in the problem are identified. Additionally, we present a method for characterizing the level of inhomogeneity in a foam target as it is heated and the time it takes for a foam to homogenize.

  16. 1-D Van der Waals Foams Heated by Ion Beam Energy Deposition

    SciTech Connect

    Zylstra, A; Barnard, J J; More, R M

    2010-03-19

    One dimensional simulations of various initial average density aluminum foams (modeled as slabs of solid metal separated by low density regions) heated by volumetric energy deposition are conducted with a Lagrangian hydrodynamics code using a van der Waals equation of state (EOS). The resulting behavior is studied to facilitate the design of future warm dense matter (WDM) experiments at LBNL. In the simulations the energy deposition ranges from 10 to 30 kJ/g and from 0.075 to 4.0 ns total pulse length, resulting in temperatures from approximately 1 to 4 eV. We study peak pressures and temperatures in the foams, expansion velocity, and the phase evolution. Five relevant time scales in the problem are identified. Additionally, we present a method for characterizing the level of inhomogeneity in a foam target as it is heated and the time it takes for a foam to homogenize.

  17. Safe and Durable High-Temperature Lithium-Sulfur Batteries via Molecular Layer Deposited Coating.

    PubMed

    Li, Xia; Lushington, Andrew; Sun, Qian; Xiao, Wei; Liu, Jian; Wang, Biqiong; Ye, Yifan; Nie, Kaiqi; Hu, Yongfeng; Xiao, Qunfeng; Li, Ruying; Guo, Jinghua; Sham, Tsun-Kong; Sun, Xueliang

    2016-06-01

    Lithium-sulfur (Li-S) battery is a promising high energy storage candidate in electric vehicles. However, the commonly employed ether based electrolyte does not enable to realize safe high-temperature Li-S batteries due to the low boiling and flash temperatures. Traditional carbonate based electrolyte obtains safe physical properties at high temperature but does not complete reversible electrochemical reaction for most Li-S batteries. Here we realize safe high temperature Li-S batteries on universal carbon-sulfur electrodes by molecular layer deposited (MLD) alucone coating. Sulfur cathodes with MLD coating complete the reversible electrochemical process in carbonate electrolyte and exhibit a safe and ultrastable cycle life at high temperature, which promise practicable Li-S batteries for electric vehicles and other large-scale energy storage systems. PMID:27175936

  18. Safe and Durable High-Temperature Lithium-Sulfur Batteries via Molecular Layer Deposited Coating.

    PubMed

    Li, Xia; Lushington, Andrew; Sun, Qian; Xiao, Wei; Liu, Jian; Wang, Biqiong; Ye, Yifan; Nie, Kaiqi; Hu, Yongfeng; Xiao, Qunfeng; Li, Ruying; Guo, Jinghua; Sham, Tsun-Kong; Sun, Xueliang

    2016-06-01

    Lithium-sulfur (Li-S) battery is a promising high energy storage candidate in electric vehicles. However, the commonly employed ether based electrolyte does not enable to realize safe high-temperature Li-S batteries due to the low boiling and flash temperatures. Traditional carbonate based electrolyte obtains safe physical properties at high temperature but does not complete reversible electrochemical reaction for most Li-S batteries. Here we realize safe high temperature Li-S batteries on universal carbon-sulfur electrodes by molecular layer deposited (MLD) alucone coating. Sulfur cathodes with MLD coating complete the reversible electrochemical process in carbonate electrolyte and exhibit a safe and ultrastable cycle life at high temperature, which promise practicable Li-S batteries for electric vehicles and other large-scale energy storage systems.

  19. The mechanical robustness of atomic-layer- and molecular-layer-deposited coatings on polymer substrates

    NASA Astrophysics Data System (ADS)

    Miller, David C.; Foster, Ross R.; Zhang, Yadong; Jen, Shih-Hui; Bertrand, Jacob A.; Lu, Zhixing; Seghete, Dragos; O'Patchen, Jennifer L.; Yang, Ronggui; Lee, Yung-Cheng; George, Steven M.; Dunn, Martin L.

    2009-05-01

    The mechanical robustness of atomic layer deposited alumina and recently developed molecular layer deposited aluminum alkoxide ("alucone") films, as well as laminated composite films composed of both materials, was characterized using mechanical tensile tests along with a recently developed fluorescent tag to visualize channel cracks in the transparent films. All coatings were deposited on polyethylene naphthalate substrates and demonstrated a similar evolution of damage morphology according to applied strain, including channel crack initiation, crack propagation at the critical strain, crack densification up to saturation, and transverse crack formation associated with buckling and delamination. From measurements of crack density versus applied tensile strain coupled with a fracture mechanics model, the mode I fracture toughness of alumina and alucone films was determined to be KIC=1.89±0.10 and 0.17±0.02 MPa m0.5, respectively. From measurements of the saturated crack density, the critical interfacial shear stress was estimated to be τc=39.5±8.3 and 66.6±6.1 MPa, respectively. The toughness of nanometer-scale alumina was comparable to that of alumina thin films grown using other techniques, whereas alucone was quite brittle. The use of alucone as a spacer layer between alumina films was not found to increase the critical strain at fracture for the composite films. This performance is attributed to the low toughness of alucone. The experimental results were supported by companion simulations using fracture mechanics formalism for multilayer films. To aid future development, the modeling method was used to study the increase in the toughness and elastic modulus of the spacer layer required to render improved critical strain at fracture. These results may be applied to a broad variety of multilayer material systems composed of ceramic and spacer layers to yield robust coatings for use in chemical barrier and other applications.

  20. Channel cracks in atomic-layer and molecular-layer deposited multilayer thin film coatings

    SciTech Connect

    Long, Rong; Dunn, Martin L.

    2014-06-21

    Metal oxide thin film coatings produced by atomic layer deposition have been shown to be an effective permeation barrier. The primary failure mode of such coatings under tensile loads is the propagation of channel cracks that penetrate vertically into the coating films. Recently, multi-layer structures that combine the metal oxide material with relatively soft polymeric layers produced by molecular layer deposition have been proposed to create composite thin films with desired properties, including potentially enhanced resistance to fracture. In this paper, we study the effects of layer geometry and material properties on the critical strain for channel crack propagation in the multi-layer composite films. Using finite element simulations and a thin-film fracture mechanics formalism, we show that if the fracture energy of the polymeric layer is lower than that of the metal oxide layer, the channel crack tends to penetrate through the entire composite film, and dividing the metal oxide and polymeric materials into thinner layers leads to a smaller critical strain. However, if the fracture energy of the polymeric material is high so that cracks only run through the metal oxide layers, more layers can result in a larger critical strain. For intermediate fracture energy of the polymer material, we developed a design map that identifies the optimal structure for given fracture energies and thicknesses of the metal oxide and polymeric layers. These results can facilitate the design of mechanically robust permeation barriers, an important component for the development of flexible electronics.