Sample records for molecular beam deposition

  1. High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chiarella, F., E-mail: fabio.chiarella@spin.cnr.it; Barra, M.; Ciccullo, F.

    In this paper, we report on the fabrication of N,N′-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN{sub 2}) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm{sup 2}/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound.

  2. Delayed Shutters For Dual-Beam Molecular Epitaxy

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J.; Liu, John L.; Hancock, Bruce

    1989-01-01

    System of shutters for dual-molecular-beam epitaxy apparatus delays start of one beam with respect to another. Used in pulsed-beam equipment for deposition of low-dislocation layers of InAs on GaAs substrates, system delays application of arsenic beam with respect to indium beam to assure proper stoichiometric proportions on newly forming InAs surface. Reflectance high-energy electron diffraction (RHEED) instrument used to monitor condition of evolving surface of deposit. RHEED signal used to time pulsing of molecular beams in way that minimizes density of defects and holds lattice constant of InAs to that of GaAs substrate.

  3. Deposition of Cubic AlN Films on MgO (100) Substrates by Laser Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Mo, Z. K.; Yang, W. J.; Weng, Y.; Fu, Y. C.; He, H.; Shen, X. M.

    2017-12-01

    Cubic AlN (c-AlN) films were deposited on MgO (100) substrates by laser molecular beam epitaxy (LMBE) technique. The crystal structure and surface morphology of deposited films with various laser pulse energy and substrate temperature were investigated. The results indicate that c-AlN films exhibit the (200) preferred orientation, showing a good epitaxial relationship with the substrate. The surface roughness of c-AlN films increases when the laser pulse energy and substrate temperature increase. The film grown at laser pulse energy of 150 mJ and substrate temperature of 700 °C shows the best crystalline quality and relatively smooth surface.

  4. Focused helium-ion-beam-induced deposition

    NASA Astrophysics Data System (ADS)

    Alkemade, P. F. A.; Miro, H.

    2014-12-01

    The recent introduction of the helium ion microscope (HIM) offers new possibilities for materials modification and fabrication with spatial resolution below 10 nm. In particular, the specific interaction of He+ ions in the tens of keV energy range with materials—i.e., minimal deflection and mainly energy loss via electronic excitations—renders the HIM a special tool for ion-beam-induced deposition. In this work, an overview is given of all studies of helium-ion-beam-induced deposition (He-IBID) that appeared in the literature before summer 2014. Continuum models that describe the deposition processes are presented in detail, with emphasis on precursor depletion and replenishment. In addition, a Monte Carlo model is discussed. Basic experimental He-IBID studies are critically examined. They show deposition rates of up to 0.1 nm3/ion. Analysis by means of a continuum model yields the precursor diffusion constant and the cross sections for beam-induced precursor decomposition and beam-induced desorption. Moreover, it is shown that deposition takes place only in a small zone around the beam impact point. Furthermore, the characterization of deposited materials is discussed in terms of microstructure and resistivity. It is shown that He-IBID material resembles more electron-beam-induced-deposition (EBID) material than Ga-ion-beam-induced-deposition (Ga-IBID) material. Nevertheless, the spatial resolution for He-IBID is in general better than for EBID and Ga-IBID; in particular, proximity effects are minimal.

  5. Temperature stabilized effusion cell evaporation source for thin film deposition and molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Tiedje, H. F.; Brodie, D. E.

    2000-05-01

    A simple effusion cell evaporation source for thin film deposition and molecular-beam epitaxy is described. The source consists of a crucible with a thermocouple temperature sensor heated by a resistive crucible heater. Radiation heat transfer from the crucible to the thermocouple produces a consistent and reproducible thermocouple temperature for a given crucible temperature, without direct contact between the thermocouple and the crucible. The thermocouple temperature is somewhat less than the actual crucible temperature because of heat flow from the thermocouple junction along the thermocouple lead wires. In a typical case, the thermocouple temperature is 1007 °C while the crucible is at 1083 °C. The crucible temperature stability is estimated from the measured sensitivity of the evaporation rate of indium to temperature, and the observed variations in the evaporation rate for a fixed thermocouple temperature. The crucible temperature peak-to-peak variation over a one hour period is 1.2 °C. Machined molybdenum crucibles were used in the indium and copper sources for depositing CuInSe2 thin films for solar cells.

  6. Thermoelectric Properties of Nanograined Si-Ge-Au Thin Films Grown by Molecular Beam Deposition

    NASA Astrophysics Data System (ADS)

    Nishino, Shunsuke; Ekino, Satoshi; Inukai, Manabu; Omprakash, Muthusamy; Adachi, Masahiro; Kiyama, Makoto; Yamamoto, Yoshiyuki; Takeuchi, Tsunehiro

    2018-06-01

    Conditions to achieve extremely large Seebeck coefficient and extremely small thermal conductivity in Si-Ge-Au thin films formed of nanosized grains precipitated in amorphous matrix have been investigated. We employed molecular beam deposition to prepare Si1- x Ge x Au y thin films on sapphire substrate. The deposited films were annealed under nitrogen gas atmosphere at 300°C to 500°C for 15 min to 30 min. Nanocrystals dispersed in amorphous matrix were clearly observed by transmission electron microscopy. We did not observe anomalously large Seebeck coefficient, but very low thermal conductivity of nearly 1.0 W K-1 m-1 was found at around 0.2 < x < 0.6. The compositional dependence of the thermal conductivity was well accounted for by the compositional dependence of the mixing entropy. Some of these values agree exactly with the amorphous limit predicted by theoretical calculations. The smallest lattice thermal conductivity found for the present samples is lower than that of nanostructured Si-Ge bulk material for which dimensionless figure of merit of ZT ≈ 1 was reported at high temperature.

  7. What controls deposition rate in electron-beam chemical vapor deposition?

    PubMed

    White, William B; Rykaczewski, Konrad; Fedorov, Andrei G

    2006-08-25

    The key physical processes governing electron-beam-assisted chemical vapor deposition are analyzed via a combination of theoretical modeling and supporting experiments. The scaling laws that define growth of the nanoscale deposits are developed and verified using carefully designed experiments of carbon deposition from methane onto a silicon substrate. The results suggest that the chamber-scale continuous transport of the precursor gas is the rate controlling process in electron-beam chemical vapor deposition.

  8. Development of a hybrid molecular beam epitaxy deposition system for in situ surface x-ray studies

    NASA Astrophysics Data System (ADS)

    Andersen, Tassie K.; Cook, Seyoung; Benda, Erika; Hong, Hawoong; Marks, Laurence D.; Fong, Dillon D.

    2018-03-01

    A portable metalorganic gas delivery system designed and constructed to interface with an existing molecular beam epitaxy chamber at beamline 33-ID-E of the Advanced Photon Source is described. This system offers the ability to perform in situ X-ray measurements of complex oxide growth via hybrid molecular beam epitaxy. The performance of the hybrid molecular beam epitaxy system while delivering metalorganic source materials is described. The high-energy X-ray scattering capabilities of the hybrid molecular beam epitaxy system are demonstrated both on oxide films grown solely from the metalorganic source and ABO3 oxide perovskites containing elements from both the metalorganic source and a traditional effusion cell.

  9. Development of a hybrid molecular beam epitaxy deposition system for in situ surface x-ray studies

    DOE PAGES

    Andersen, Tassie K.; Cook, Seyoung; Benda, Erika; ...

    2018-03-08

    A portable metalorganic gas delivery system designed and constructed to interface with an existing molecular beam epitaxy chamber at beamline 33-ID-E of the Advanced Photon Source is described. This system offers the ability to perform in situ X-ray measurements of complex oxide growth via hybrid molecular beam epitaxy. The performance of the hybrid molecular beam epitaxy system while delivering metalorganic source materials is described. In conclusion, the high-energy X-ray scattering capabilities of the hybrid molecular beam epitaxy system are demonstrated both on oxide films grown solely from the metalorganic source and ABO 3 oxide perovskites containing elements from both themore » metalorganic source and a traditional effusion cell.« less

  10. Development of a hybrid molecular beam epitaxy deposition system for in situ surface x-ray studies

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Andersen, Tassie K.; Cook, Seyoung; Benda, Erika

    A portable metalorganic gas delivery system designed and constructed to interface with an existing molecular beam epitaxy chamber at beamline 33-ID-E of the Advanced Photon Source is described. This system offers the ability to perform in situ X-ray measurements of complex oxide growth via hybrid molecular beam epitaxy. The performance of the hybrid molecular beam epitaxy system while delivering metalorganic source materials is described. In conclusion, the high-energy X-ray scattering capabilities of the hybrid molecular beam epitaxy system are demonstrated both on oxide films grown solely from the metalorganic source and ABO 3 oxide perovskites containing elements from both themore » metalorganic source and a traditional effusion cell.« less

  11. Improvements in Ionized Cluster-Beam Deposition

    NASA Technical Reports Server (NTRS)

    Fitzgerald, D. J.; Compton, L. E.; Pawlik, E. V.

    1986-01-01

    Lower temperatures result in higher purity and fewer equipment problems. In cluster-beam deposition, clusters of atoms formed by adiabatic expansion nozzle and with proper nozzle design, expanding vapor cools sufficiently to become supersaturated and form clusters of material deposited. Clusters are ionized and accelerated in electric field and then impacted on substrate where films form. Improved cluster-beam technique useful for deposition of refractory metals.

  12. Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

    NASA Technical Reports Server (NTRS)

    Nouhi, A.; Radhakrishnan, G.; Katz, J.; Koliwad, K.

    1988-01-01

    Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

  13. Comparative study of LaNiO3/LaAlO3 heterostructures grown by pulsed laser deposition and oxide molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wrobel, F.; Mark, A. F.; Christiani, G.; Sigle, W.; Habermeier, H.-U.; van Aken, P. A.; Logvenov, G.; Keimer, B.; Benckiser, E.

    2017-01-01

    Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and the large band gap insulator LaAlO3 by atomic layer-by-layer molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) and compared their crystallinity and microstructure as revealed by high-resolution transmission electron microscopy images and resistivity. The MBE samples show a higher density of stacking faults but smoother interfaces and generally higher electrical conductivity. Our study identifies the opportunities and challenges of MBE and PLD growth and serves as a general guide for the choice of the deposition technique for perovskite oxides.

  14. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  15. Ion Beam Assisted Deposition of Thin Epitaxial GaN Films.

    PubMed

    Rauschenbach, Bernd; Lotnyk, Andriy; Neumann, Lena; Poppitz, David; Gerlach, Jürgen W

    2017-06-23

    The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy <100 eV) is capable to modify the characteristics of the growing film without generating a large number of irradiation induced defects. The nitrogen ion beam assisted molecular beam epitaxy (ion energy <25 eV) is used to deposit GaN thin films on (0001)-oriented 6H-SiC substrates at 700 °C. The films are studied in situ by reflection high energy electron diffraction, ex situ by X-ray diffraction, scanning tunnelling microscopy, and high-resolution transmission electron microscopy. It is demonstrated that the film growth mode can be controlled by varying the ion to atom ratio, where 2D films are characterized by a smooth topography, a high crystalline quality, low biaxial stress, and low defect density. Typical structural defects in the GaN thin films were identified as basal plane stacking faults, low-angle grain boundaries forming between w-GaN and z-GaN and twin boundaries. The misfit strain between the GaN thin films and substrates is relieved by the generation of edge dislocations in the first and second monolayers of GaN thin films and of misfit interfacial dislocations. It can be demonstrated that the low-energy nitrogen ion assisted molecular beam epitaxy is a technique to produce thin GaN films of high crystalline quality.

  16. Focused electron beam induced deposition of pure SIO II

    NASA Astrophysics Data System (ADS)

    Perentes, Alexandre; Hoffmann, Patrik; Munnik, Frans

    2007-02-01

    Focused electron beam induced processing (FEBID) equipments are the "all in one" tools for high resolution investigation, and modification of nano-devices. Focused electron beam induced deposition from a gaseous precursor usually results in a nano-composite sub-structured material, in which the interesting material is embedded in an amorphous carbonaceous matrix. Using the Hydrogen free tetraisocyanatosilane Si(NCO) 4 molecule as Si source, we show how a controlled oxygen flux, simultaneously injected with the precursor vapors, causes contaminants to vanish from the FEB deposits obtained and leads to the deposition of pure SiO II. The chemical composition of the FEBID material could be controlled from SiC IINO 3 to SiO II, the latter containing undetectable foreign element contamination. The [O II] / [TICS] ratio needed to obtain SiO II in our FEB deposition equipment is larger than 300. The evolution of the FEBID material chemical composition is presented as function of the [O II] / [TICS] molecular flux ratios. A hypothetical decomposition pathway of this silane under these conditions is discussed based on the different species formed under electron bombardment of TICS. Transmission electron microscopy investigations demonstrated that the deposited oxide is smooth (roughness sub 2nm) and amorphous. Infrared spectroscopy confirmed the low concentration of hydroxyl groups. The Hydrogen content of the deposited oxide, measured by elastic recoil detection analysis, is as low as 1 at%. 193nm wavelength AIMS investigations of 125nm thick SiO II pads (obtained with [O II] / [TICS] = 325) showed an undetectable light absorption.

  17. Applying CLIPS to control of molecular beam epitaxy processing

    NASA Technical Reports Server (NTRS)

    Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

    1990-01-01

    A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

  18. Ionized cluster beam deposition

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, A. R.

    1983-01-01

    Ionized Cluster Beam (ICB) deposition, a new technique originated by Takagi of Kyoto University in Japan, offers a number of unique capabilities for thin film metallization as well as for deposition of active semiconductor materials. ICB allows average energy per deposited atom to be controlled and involves impact kinetics which result in high diffusion energies of atoms on the growth surface. To a greater degree than in other techniques, ICB involves quantitative process parameters which can be utilized to strongly control the characteristics of films being deposited. In the ICB deposition process, material to be deposited is vaporized into a vacuum chamber from a confinement crucible at high temperature. Crucible nozzle configuration and operating temperature are such that emerging vapor undergoes supercondensation following adiabatic expansion through the nozzle.

  19. Molecular Beam Epitaxial Materials Study for Microwave and Millimeter Wave Devices.

    DTIC Science & Technology

    1978-10-01

    competing for domi- nance with any given set of system components and deposition sequence. The evidence indicates that BeO substrate heaters contribute...34Single- Tranverse -Mode Injection Lasers with Embedded Stripe Layer Grown by Molecular Beam Epitaxy," Appl. Phys. Lett., 29, pp. 164-166 (1976). 178

  20. LaAlO{sub 3}/Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical properties

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Pelloquin, Sylvain; Baboux, Nicolas; Albertini, David

    2013-01-21

    A study of the structural and electrical properties of amorphous LaAlO{sub 3} (LAO)/Si thin films fabricated by molecular beam deposition (MBD) is presented. Two substrate preparation procedures have been explored namely a high temperature substrate preparation technique-leading to a step and terraces surface morphology-and a chemical HF-based surface cleaning. The LAO deposition conditions were improved by introducing atomic plasma-prepared oxygen instead of classical molecular O{sub 2} in the chamber. An Au/Ni stack was used as the top electrode for its electrical characteristics. The physico-chemical properties (surface topography, thickness homogeneity, LAO/Si interface quality) and electrical performance (capacitance and current versus voltagemore » and TunA current topography) of the samples were systematically evaluated. Deposition conditions (substrate temperature of 550 Degree-Sign C, oxygen partial pressure settled at 10{sup -6} Torr, and 550 W of power applied to the O{sub 2} plasma) and post-depositions treatments were investigated to optimize the dielectric constant ({kappa}) and leakage currents density (J{sub Gate} at Double-Vertical-Line V{sub Gate} Double-Vertical-Line = Double-Vertical-Line V{sub FB}- 1 Double-Vertical-Line ). In the best reproducible conditions, we obtained a LAO/Si layer with a dielectric constant of 16, an equivalent oxide thickness of 8.7 A, and J{sub Gate} Almost-Equal-To 10{sup -2}A/cm{sup 2}. This confirms the importance of LaAlO{sub 3} as an alternative high-{kappa} for ITRS sub-22 nm technology node.« less

  1. Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: the role of dissociative ionization and dissociative electron attachment in the deposition process.

    PubMed

    P, Ragesh Kumar T; Hari, Sangeetha; Damodaran, Krishna K; Ingólfsson, Oddur; Hagen, Cornelis W

    2017-01-01

    We present first experiments on electron beam induced deposition of silacyclohexane (SCH) and dichlorosilacyclohexane (DCSCH) under a focused high-energy electron beam (FEBID). We compare the deposition dynamics observed when growing pillars of high aspect ratio from these compounds and we compare the proximity effect observed for these compounds. The two precursors show similar behaviour with regards to fragmentation through dissociative ionization in the gas phase under single-collision conditions. However, while DCSCH shows appreciable cross sections with regards to dissociative electron attachment, SCH is inert with respect to this process. We discuss our deposition experiments in context of the efficiency of these different electron-induced fragmentation processes. With regards to the deposition dynamics, we observe a substantially faster growth from DCSCH and a higher saturation diameter when growing pillars with high aspect ratio. However, both compounds show similar behaviour with regards to the proximity effect. With regards to the composition of the deposits, we observe that the C/Si ratio is similar for both compounds and in both cases close to the initial molecular stoichiometry. The oxygen content in the DCSCH deposits is about double that of the SCH deposits. Only marginal chlorine is observed in the deposits of from DCSCH. We discuss these observations in context of potential approaches for Si deposition.

  2. Comparison of InGaAs(100) Grown by Chemical Beam Epitaxy and Metal Organic Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Williams, M. D.; Greene, A. L.; Daniels-Race, T.; Lum, R. M.

    2000-01-01

    Secondary ion mass spectrometry is used to study the effects of substrate temperature on the composition and growth rate of InGaAs/InP(100) multilayers grown by chemical beam epitaxy, metal-organic chemical vapor deposition and solid source molecular beam epitaxy. The growth kinetics of the material grown by the different techniques are analyzed and compared.

  3. Mechanics of hydrogenated amorphous carbon deposits from electron-beam-induced deposition of a paraffin precursor

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ding, W.; Dikin, D.A.; Chen, X.

    2005-07-01

    Many experiments on the mechanics of nanostructures require the creation of rigid clamps at specific locations. In this work, electron-beam-induced deposition (EBID) has been used to deposit carbon films that are similar to those that have recently been used for clamping nanostructures. The film deposition rate was accelerated by placing a paraffin source of hydrocarbon near the area where the EBID deposits were made. High-resolution transmission electron microscopy, electron-energy-loss spectroscopy, Raman spectroscopy, secondary-ion-mass spectrometry, and nanoindentation were used to characterize the chemical composition and the mechanics of the carbonaceous deposits. The typical EBID deposit was found to be hydrogenated amorphousmore » carbon (a-C:H) having more sp{sup 2}- than sp{sup 3}-bonded carbon. Nanoindentation tests revealed a hardness of {approx}4 GPa and an elastic modulus of 30-60 GPa, depending on the accelerating voltage. This reflects a relatively soft film, which is built out of precursor molecular ions impacting the growing surface layer with low energies. The use of such deposits as clamps for tensile tests of poly(acrylonitrile)-based carbon nanofibers loaded between opposing atomic force microscope cantilevers is presented as an example application.« less

  4. Photoelectron photoion molecular beam spectroscopy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Trevor, D.J.

    1980-12-01

    The use of supersonic molecular beams in photoionization mass spectroscopy and photoelectron spectroscopy to assist in the understanding of photoexcitation in the vacuum ultraviolet is described. Rotational relaxation and condensation due to supersonic expansion were shown to offer new possibilities for molecular photoionization studies. Molecular beam photoionization mass spectroscopy has been extended above 21 eV photon energy by the use of Stanford Synchrotron Radiation Laboratory (SSRL) facilities. Design considerations are discussed that have advanced the state-of-the-art in high resolution vuv photoelectron spectroscopy. To extend gas-phase studies to 160 eV photon energy, a windowless vuv-xuv beam line design is proposed.

  5. Dual ion beam assisted deposition of biaxially textured template layers

    DOEpatents

    Groves, James R.; Arendt, Paul N.; Hammond, Robert H.

    2005-05-31

    The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be deposited without degradation of the desired properties by the material. The ability to deposit thicker layers without loss of properties provides a significantly broader deposition window for the process.

  6. Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lei, Qingyu; Golalikhani, Maryam; Davidson, Bruce A.; Liu, Guozhen; Schlom, Darrell G.; Qiao, Qiao; Zhu, Yimei; Chandrasena, Ravini U.; Yang, Weibing; Gray, Alexander X.; Arenholz, Elke; Farrar, Andrew K.; Tenne, Dmitri A.; Hu, Minhui; Guo, Jiandong; Singh, Rakesh K.; Xi, Xiaoxing

    2017-12-01

    Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+δ, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With atomic layer-by-layer laser molecular-beam epitaxy we have produced conducting LaAlO3/SrTiO3 interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.

  7. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

    1995-01-01

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

  8. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, S.A.; Killeen, K.P.; Lear, K.L.

    1995-01-10

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time. 9 figures.

  9. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lee, J. H.; Tung, I. C.; Chang, S.-H.; Bhattacharya, A.; Fong, D. D.; Freeland, J. W.; Hong, Hawoong

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  10. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy.

    PubMed

    Lee, J H; Tung, I C; Chang, S-H; Bhattacharya, A; Fong, D D; Freeland, J W; Hong, Hawoong

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  11. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    DOE PAGES

    Lee, J. H.; Tung, I. C.; Chang, S. -H.; ...

    2016-01-05

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-raymore » and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Finally, additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.« less

  12. Deposition of reactively ion beam sputtered silicon nitride coatings

    NASA Technical Reports Server (NTRS)

    Grill, A.

    1982-01-01

    An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

  13. Chopped molecular beam multiplexing system

    NASA Technical Reports Server (NTRS)

    Adams, Billy R. (Inventor)

    1986-01-01

    The integration of a chopped molecular beam mass spectrometer with a time multiplexing system is described. The chopping of the molecular beam is synchronized with the time intervals by a phase detector and a synchronous motor. Arithmetic means are generated for phase shifting the chopper with respect to the multiplexer. A four channel amplifier provides the capacity to independently vary the baseline and amplitude in each channel of the multiplexing system.

  14. Friction and Wear of Ion-Beam-Deposited Diamondlike Carbon on Chemical-Vapor-Deposited, Fine-Grain Diamond

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Wu, Richard L. C.; Lanter, William C.

    1996-01-01

    Friction and wear behavior of ion-beam-deposited diamondlike carbon (DLC) films coated on chemical-vapor-deposited (CVD), fine-grain diamond coatings were examined in ultrahigh vacuum, dry nitrogen, and humid air environments. The DLC films were produced by the direct impact of an ion beam (composed of a 3:17 mixture of Ar and CH4) at ion energies of 1500 and 700 eV and an RF power of 99 W. Sliding friction experiments were conducted with hemispherical CVD diamond pins sliding on four different carbon-base coating systems: DLC films on CVD diamond; DLC films on silicon; as-deposited, fine-grain CVD diamond; and carbon-ion-implanted, fine-grain CVD diamond on silicon. Results indicate that in ultrahigh vacuum the ion-beam-deposited DLC films on fine-grain CVD diamond (similar to the ion-implanted CVD diamond) greatly decrease both the friction and wear of fine-grain CVD diamond films and provide solid lubrication. In dry nitrogen and in humid air, ion-beam-deposited DLC films on fine-grain CVD diamond films also had a low steady-state coefficient of friction and a low wear rate. These tribological performance benefits, coupled with a wider range of coating thicknesses, led to longer endurance life and improved wear resistance for the DLC deposited on fine-grain CVD diamond in comparison to the ion-implanted diamond films. Thus, DLC deposited on fine-grain CVD diamond films can be an effective wear-resistant, lubricating coating regardless of environment.

  15. Laser controlled deposition of metal microstructures via nondiffracting Bessel beam illumination

    NASA Astrophysics Data System (ADS)

    Drampyan, Rafael; Leonov, Nikita; Vartanyan, Tigran

    2016-04-01

    The technique of the laser controlled deposition of sodium and rubidium deposits on the sapphire substrate is presented. The metals were deposited on the clean sapphire substrate from the vapor phase contained in the evacuated and sealed cell. We use an axicon to produce a non-diffracting Bessel beam out of the beam got from the cw diode laser with 200 mW power at the wavelength of 532 nm. After 30 minutes of the laser-controlled deposition the substrates were examined in the optical microscope. The obtained metal deposits form the sharp-cut circles with the pitch of 10 μm, coincident with the tens of dark rings of the Bessel beam. Reduction of the laser power leads to the build up of the continuous metal film over the whole substrate.

  16. Use of beam deflection to control an electron beam wire deposition process

    NASA Technical Reports Server (NTRS)

    Taminger, Karen M. (Inventor); Hofmeister, William H. (Inventor); Hafley, Robert A. (Inventor)

    2013-01-01

    A method for controlling an electron beam process wherein a wire is melted and deposited on a substrate as a molten pool comprises generating the electron beam with a complex raster pattern, and directing the beam onto an outer surface of the wire to thereby control a location of the wire with respect to the molten pool. Directing the beam selectively heats the outer surface of the wire and maintains the position of the wire with respect to the molten pool. An apparatus for controlling an electron beam process includes a beam gun adapted for generating the electron beam, and a controller adapted for providing the electron beam with a complex raster pattern and for directing the electron beam onto an outer surface of the wire to control a location of the wire with respect to the molten pool.

  17. Silicon nitride films deposited with an electron beam created plasma

    NASA Technical Reports Server (NTRS)

    Bishop, D. C.; Emery, K. A.; Rocca, J. J.; Thompson, L. R.; Zamani, H.; Collins, G. J.

    1984-01-01

    The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.

  18. Ion beam sputter deposited diamond like films

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Rutledge, S. K.

    1982-01-01

    A single argon ion beam source was used to sputter deposit carbon films on fused silica, copper, and tantalum substrates under conditions of sputter deposition alone and sputter deposition combined with simultaneous argon ion bombardment. Simultaneously deposited and ion bombarded carbon films were prepared under conditions of carbon atom removal to arrival ratios of 0, 0.036, and 0.71. Deposition and etch rates were measured for films on fused silica substrates. Resulting characteristics of the deposited films are: electrical resistivity of densities of 2.1 gm/cu cm for sputter deposited films and 2.2 gm/cu cm for simultaneously sputter deposited and Ar ion bombarded films. For films approximately 1700 A thick deposited by either process and at 5550 A wavelength light the reflectance was 0.2, the absorptance was 0.7, the absorption coefficient was 67,000 cm to the -1 and the transmittance was 0.1.

  19. Group-III nitride VCSEL structures grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Ng, HockMin; Moustakas, Theodore D.

    2000-07-01

    III-nitride VCSEL structures designed for electron-beam pumping have been grown by molecular beam epitaxy (MBE). The structures consist of a sapphire substrate on which an AlN/GaN distributed Bragg reflector (DBR) with peak reflectance >99% at 402 nm is deposited. The active region consists of a 2-(lambda) cavity with 25 In0.1Ga0.9N/GaN multiquantum wells (MQWs) whose emission coincides with the high reflectance region of the DBR. The thicknesses of the InGaN wells and the GaN barriers are 35 angstrom and 75 angstrom respectively. The top reflector consists of a silver metallic mirror which prevents charging effects during electron-beam pumping. The structure was pumped from the top- side with a cw electron-beam using a modified cathodoluminescence (CL) system mounted on a scanning electron microscope chamber. Light output was collected from the polished sapphire substrate side. Measurements performed at 100 K showed intense emission at 407 nm with narrowing of the linewidth with increasing beam current. A narrow emission linewidth of 0.7 nm was observed indicating the onset of stimulated emission.

  20. Molecular Beam Epitaxial Regrowth of Antimonide-Based Semiconductors

    DTIC Science & Technology

    2011-01-01

    Molecular Beam Epitaxial Regrowth of Antimonide-Based Semiconductors MATTHEW REASON,1 BRIAN R. BENNETT,1,2 RICHARD MAGNO,1 and J. BRAD BOOS1 1...2010 to 00-00-2010 4. TITLE AND SUBTITLE Molecular Beam Epitaxial Regrowth of Antimonide-Based Semiconductors 5a. CONTRACT NUMBER 5b. GRANT...Prescribed by ANSI Std Z39-18 EXPERIMENTAL PROCEDURES The samples reported in this work were grown by solid-source molecular - beam epitaxy (MBE) with

  1. Ion beam and dual ion beam sputter deposition of tantalum oxide films

    NASA Astrophysics Data System (ADS)

    Cevro, Mirza; Carter, George

    1994-11-01

    Ion beam sputter deposition (IBS) and dual ion beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. Optical properties ie refractive index and extinction coefficient of IBS films were determined in the 250 - 1100 nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n equals 2.06 at (lambda) equals 550 nm. Films deposited using DIBS ie deposition assisted by low energy Ar and O2 ions (Ea equals 0 - 300 eV) and low current density (Ji equals 0 - 40 (mu) A/cm2) showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy while composition of the film and contaminants were determined by Rutherford scattering spectroscopy. Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target while assisted deposition slightly increased the Ar content. Stress in the IBS deposited films was measured by the bending technique. IBS deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All

  2. Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films

    NASA Astrophysics Data System (ADS)

    Cevro, Mirza; Carter, George

    1995-02-01

    Ion-beam sputter deposition (IBS) and dual-ion-beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. The optical properties, i.e., refractive index and extinction coefficient, of IBS films were determined in the 250- to 1100-nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n 2.06 at (lambda) equals 550 nm. Films deposited using DIBS, i.e., deposition assisted by low energy Ar and O2 ions (Ea equals 0 to 300 eV) and low current density (Ji equals 0 to 40 (mu) A/cm2), showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy, whereas composition of the film and contaminants were determined by Rutherford backscattering spectroscopy (RBS). Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target whereas assisted deposition slightly increased the Ar content. Stress in the IBS-deposited films was measured by the bending technique. IBS-deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals

  3. Cluster Beam Deposition of High Temperature Materials

    DTIC Science & Technology

    1991-01-01

    include Secur y Classifocation) CLUSTER BEAM DEPOSITION OF HIGH TEMPERATURE MATERIALS 12 . PERSONAL AUTHOR(S) William J. Herron and James F. Garvey 13a TYPE... industria - applications (su:erconducting thin films, diamond-liKe !arbn,. films, patterned or multi-layered thin films, etc...) INT RODIU C’I 1 Recently there...Tne path of the expanc~ nr gas pulse passes perpendicularly (left to right in tne figure) over the surface of the target rod. I I Laser Beam-I I I Lens

  4. Simulation of electron transport during electron-beam-induced deposition of nanostructures

    PubMed Central

    Jeschke, Harald O; Valentí, Roser

    2013-01-01

    Summary We present a numerical investigation of energy and charge distributions during electron-beam-induced growth of tungsten nanostructures on SiO2 substrates by using a Monte Carlo simulation of the electron transport. This study gives a quantitative insight into the deposition of energy and charge in the substrate and in the already existing metallic nanostructures in the presence of the electron beam. We analyze electron trajectories, inelastic mean free paths, and the distribution of backscattered electrons in different compositions and at different depths of the deposit. We find that, while in the early stages of the nanostructure growth a significant fraction of electron trajectories still interacts with the substrate, when the nanostructure becomes thicker the transport takes place almost exclusively in the nanostructure. In particular, a larger deposit density leads to enhanced electron backscattering. This work shows how mesoscopic radiation-transport techniques can contribute to a model that addresses the multi-scale nature of the electron-beam-induced deposition (EBID) process. Furthermore, similar simulations can help to understand the role that is played by backscattered electrons and emitted secondary electrons in the change of structural properties of nanostructured materials during post-growth electron-beam treatments. PMID:24367747

  5. Silicon Oxide Deposition into a Hole Using a Focused Ion Beam

    NASA Astrophysics Data System (ADS)

    Nakamura, Hiroko; Komano, Haruki; Norimatu, Kenji; Gomei, Yoshio

    1991-11-01

    Focused ion beam (FIB)-induced deposition of silicon oxide in terms of filling a hole is reported. It was found that a vacant space was formed when an ion beam was simply scanned through the hole area. To investigate the mechanism to form the vacancy, deposition on the sample, which has a step with a height of 0.8 μm, was carried out by using a Si2+ and a Be2+ ion beam. An extruded deposit resembling a pent roof was observed from the step ridge. The mechanism of the pent roof growth on the steplike sample was considered and the vacancy formation in the hole can be explained by the same mechanism. For silicon oxide, the high growth rate of the extruded deposit is thought to be the key to the vacancy formation. A useful way is proposed to fill the hole with silicon oxide with almost no vacancy.

  6. Single-step fabrication of homoepitaxial silicon nanocones by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Colniţă, Alia; Marconi, Daniel; Brătfălean, Radu Tiberiu; Turcu, Ioan

    2018-04-01

    The purpose of this work was to optimize a single-step fabrication process of silicon (Si) cones-like nanostructures on Si(111) reconstructed substrates. The substrate temperature is the most important parameter in the Si/Si growth, due to its high influence over the surface nanostructuring and the occurrence of well defined nanocones. We investigate the effect of different substrate temperatures on the density and size distributions of Si nanocones formed during the molecular beam epitaxy (MBE) deposition of Si/Si(111) 7 × 7 reconstructed surfaces. The nanocones were characterized using scanning tunnelling microscopy (STM) and the height and the bottom area distributions of the Si nanocones were assessed. It was found that the obtained distributions are interrelated suggesting the self-similarity of the nanostructures grown during the deposition protocol.

  7. Continuous all-optical deceleration of molecular beams

    NASA Astrophysics Data System (ADS)

    Jayich, Andrew; Chen, Gary; Long, Xueping; Wang, Anna; Campbell, Wesley

    2014-05-01

    A significant impediment to generating ultracold molecules is slowing a molecular beam to velocities where the molecules can be cooled and trapped. We report on progress toward addressing this issue with a general optical deceleration technique for molecular and atomic beams. We propose addressing the molecular beam with a pump and dump pulse sequence from a mode-locked laser. The pump pulse counter-propagates with respect to the beam and drives the molecules to the excited state. The dump pulse co-propagates and stimulates emission, driving the molecules back to the ground state. This cycle transfers 2 ℏk of momentum and can generate very large optical forces, not limited by the spontaneous emission lifetime of the molecule or atom. Importantly, avoiding spontaneous emission limits the branching to dark states. This technique can later be augmented with cooling and trapping. We are working towards demonstrating this optical force by accelerating a cold atomic sample.

  8. A combined molecular dynamics and Monte Carlo simulation of the spatial distribution of energy deposition by proton beams in liquid water.

    PubMed

    Garcia-Molina, Rafael; Abril, Isabel; Heredia-Avalos, Santiago; Kyriakou, Ioanna; Emfietzoglou, Dimitris

    2011-10-07

    We have evaluated the spatial distribution of energy deposition by proton beams in liquid water using the simulation code SEICS (Simulation of Energetic Ions and Clusters through Solids), which combines molecular dynamics and Monte Carlo techniques and includes the main interaction phenomena between the projectile and the target constituents: (i) the electronic stopping force due to energy loss to target electronic excitations, including fluctuations due to the energy-loss straggling, (ii) the elastic scattering with the target nuclei, with their corresponding energy loss and (iii) the dynamical changes in projectile charge state due to electronic capture and loss processes. An important feature of SEICS is the accurate account of the excitation spectrum of liquid water, based on a consistent solid-state description of its energy-loss-function over the whole energy and momentum space. We analyse how the above-mentioned interactions affect the depth distribution of the energy delivered in liquid water by proton beams with incident energies of the order of several MeV. Our simulations show that the position of the Bragg peak is determined mainly by the stopping power, whereas its width can be attributed to the energy-loss straggling. Multiple elastic scattering processes contribute slightly only at the distal part of the Bragg peak. The charge state of the projectiles only changes when approaching the end of their trajectories, i.e. near the Bragg peak. We have also simulated the proton-beam energy distribution at several depths in the liquid water target, and found that it is determined mainly by the fluctuation in the energy loss of the projectile, evaluated through the energy-loss straggling. We conclude that a proper description of the target excitation spectrum as well as the inclusion of the energy-loss straggling is essential in the calculation of the proton beam depth-dose distribution.

  9. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1986-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  10. Supersonic molecular beam experiments on surface chemical reactions.

    PubMed

    Okada, Michio

    2014-10-01

    The interaction of a molecule and a surface is important in various fields, and in particular in complex systems like biomaterials and their related chemistry. However, the detailed understanding of the elementary steps in the surface chemistry, for example, stereodynamics, is still insufficient even for simple model systems. In this Personal Account, I review our recent studies of chemical reactions on single-crystalline Cu and Si surfaces induced by hyperthermal oxygen molecular beams and by oriented molecular beams, respectively. Studies of oxide formation on Cu induced by hyperthermal molecular beams demonstrate a significant role of the translational energy of the incident molecules. The use of hyperthermal molecular beams enables us to open up new chemical reaction paths specific for the hyperthermal energy region, and to develop new methods for the fabrication of thin films. On the other hand, oriented molecular beams also demonstrate the possibility of understanding surface chemical reactions in detail by varying the orientation of the incident molecules. The steric effects found on Si surfaces hint at new ways of material fabrication on Si surfaces. Controlling the initial conditions of incoming molecules is a powerful tool for finely monitoring the elementary step of the surface chemical reactions and creating new materials on surfaces. Copyright © 2014 The Chemical Society of Japan and Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Inert gas enhanced laser-assisted purification of platinum electron-beam-induced deposits

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon

    Electron-beam-induced deposition patterns, with composition of PtC 5, were purified using a pulsed laser-induced purification reaction to erode the amorphous carbon matrix and form pure platinum deposits. Enhanced mobility of residual H 2O molecules via a localized injection of inert Ar–H 2 (4%) is attributed to be the reactive gas species for purification of the deposits. Surface purification of deposits was realized at laser exposure times as low as 0.1 s. The ex situ purification reaction in the deposit interior was shown to be rate-limited by reactive gas diffusion into the deposit, and deposit contraction associated with the purification processmore » caused some loss of shape retention. To circumvent the intrinsic flaws of the ex situ anneal process, in situ deposition and purification techniques were explored that resemble a direct write atomic layer deposition (ALD) process. First, we explored a laser-assisted electron-beam-induced deposition (LAEBID) process augmented with reactive gas that resulted in a 75% carbon reduction compared to standard EBID. Lastly, a sequential deposition plus purification process was also developed and resulted in deposition of pure platinum deposits with high fidelity and shape retention.« less

  12. Inert gas enhanced laser-assisted purification of platinum electron-beam-induced deposits

    DOE PAGES

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; ...

    2015-06-30

    Electron-beam-induced deposition patterns, with composition of PtC 5, were purified using a pulsed laser-induced purification reaction to erode the amorphous carbon matrix and form pure platinum deposits. Enhanced mobility of residual H 2O molecules via a localized injection of inert Ar–H 2 (4%) is attributed to be the reactive gas species for purification of the deposits. Surface purification of deposits was realized at laser exposure times as low as 0.1 s. The ex situ purification reaction in the deposit interior was shown to be rate-limited by reactive gas diffusion into the deposit, and deposit contraction associated with the purification processmore » caused some loss of shape retention. To circumvent the intrinsic flaws of the ex situ anneal process, in situ deposition and purification techniques were explored that resemble a direct write atomic layer deposition (ALD) process. First, we explored a laser-assisted electron-beam-induced deposition (LAEBID) process augmented with reactive gas that resulted in a 75% carbon reduction compared to standard EBID. Lastly, a sequential deposition plus purification process was also developed and resulted in deposition of pure platinum deposits with high fidelity and shape retention.« less

  13. In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy

    NASA Astrophysics Data System (ADS)

    Lee, Jonghoon; Varshney, Vikas; Park, Jeongho; Farmer, Barry L.; Roy, Ajit K.

    2016-05-01

    Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested.Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon

  14. Mode-Locked Deceleration of Molecular Beams: Physics with Ultracold Molecules

    DTIC Science & Technology

    2017-02-07

    AFRL-AFOSR-VA-TR-2017-0035 Mode-Locked Deceleration of Molecular Beams: Physics with Ultracold Molecules Wesley Campbell UNIVERSITY OF CALIFORNIA...REPORT TYPE Final 3. DATES COVERED (From - To) April 2013 - June 2016 4. TITLE AND SUBTITLE Mode-Locked Deceleration of Molecular Beams: Physics with...of Molecular Beams: Physics with Ultracold Molecules" P.I. Wesley C. Campbell Report Period: April 1, 2013- March 30, 2016 As a direct result of

  15. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices.

    PubMed

    Batra, Nitin M; Patole, Shashikant P; Abdelkader, Ahmed; Anjum, Dalaver H; Deepak, Francis L; Costa, Pedro M F J

    2015-11-06

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode-interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode-nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  16. Electron Beam Freeform Fabrication: A Rapid Metal Deposition Process

    NASA Technical Reports Server (NTRS)

    Taminger, Karen M. B.; Hafley, Robert A.

    2003-01-01

    Manufacturing of structural metal parts directly from computer aided design (CAD) data has been investigated by numerous researchers over the past decade. Researchers at NASA Langley REsearch Center are developing a new solid freeform fabrication process, electron beam freeform fabrication (EBF), as a rapid metal deposition process that works efficiently with a variety of weldable alloys. The EBF process introduces metal wire feedstock into a molten pool that is created and sustained using a focused electron beam in a vacuum environment. Thus far, this technique has been demonstrated on aluminum and titanium alloys of interest for aerospace structural applications nickel and ferrous based alloys are also planned. Deposits resulting from 2219 aluminum demonstrations have exhibited a range of grain morphologies depending upon the deposition parameters. These materials ave exhibited excellent tensile properties comparable to typical handbook data for wrought plate product after post-processing heat treatments. The EBF process is capable of bulk metal deposition at deposition rated in excess of 2500 cubic centimeters per hour (150 cubic inches per our) or finer detail at lower deposition rates, depending upon the desired application. This process offers the potential for rapidly adding structural details to simpler cast or forged structures rather than the conventional approach of machining large volumes of chips to produce a monolithic metallic structure. Selective addition of metal onto simpler blanks of material can have a significant effect on lead time reduction and lower material and machining costs.

  17. Ion beam deposition of in situ superconducting Y-Ba-Cu-O films

    NASA Astrophysics Data System (ADS)

    Klein, J. D.; Yen, A.; Clauson, S. L.

    1990-01-01

    Oriented superconducting YBa2Cu3O7 thin films were deposited on yttria-stabilized zirconia substrates by ion beam sputtering of a nonstoichiometric oxide target. The films exhibited zero-resistance critical temperatures as high as 80.5 K without post-deposition anneals. Both the deposition rate and the c lattice parameter data displayed two distinct regimes of dependence on the beam power of the ion source. Low-power sputtering yielded films with large c dimensions and low Tc's. Higher power sputtering produced a continuous decrease in the c lattice parameter and an increase in critical temperatures.

  18. Influence of Molecular Shape on the Thermal Stability and Molecular Orientation of Vapor-Deposited Organic Semiconductors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Walters, Diane M; Antony, Lucas; de Pablo, Juan

    High thermal stability and anisotropic molecular orientation enhance the performance of vapor-deposited organic semiconductors, but controlling these properties is a challenge in amorphous materials. To understand the influence of molecular shape on these properties, vapor-deposited glasses of three disk-shaped molecules were prepared. For all three systems, enhanced thermal stability is observed for glasses prepared over a wide range of substrate temperatures and anisotropic molecular orientation is observed at lower substrate temperatures. For two of the disk-shaped molecules, atomistic simulations of thin films were also performed and anisotropic molecular orientation was observed at the equilibrium liquid surface. We find that themore » structure and thermal stability of these vapor-deposited glasses results from high surface mobility and partial equilibration toward the structure of the equilibrium liquid surface during the deposition process. For the three molecules studied, molecular shape is a dominant factor in determining the anisotropy of vapor-deposited glasses.« less

  19. An optimized nanoparticle separator enabled by electron beam induced deposition

    NASA Astrophysics Data System (ADS)

    Fowlkes, J. D.; Doktycz, M. J.; Rack, P. D.

    2010-04-01

    Size-based separations technologies will inevitably benefit from advances in nanotechnology. Direct-write nanofabrication provides a useful mechanism for depositing/etching nanoscale elements in environments otherwise inaccessible to conventional nanofabrication techniques. Here, electron beam induced deposition was used to deposit an array of nanoscale features in a 3D environment with minimal material proximity effects outside the beam-interaction region. Specifically, the membrane component of a nanoparticle separator was fabricated by depositing a linear array of sharply tipped nanopillars, with a singular pitch, designed for sub-50 nm nanoparticle permeability. The nanopillar membrane was used in a dual capacity to control the flow of nanoparticles in the transaxial direction of the array while facilitating the sealing of the cellular-sized compartment in the paraxial direction. An optimized growth recipe resulted which (1) maximized the growth efficiency of the membrane (which minimizes proximity effects) and (2) preserved the fidelity of the spacing between nanopillars (which maximizes the size-based gating quality of the membrane) while (3) maintaining sharp nanopillar apexes for impaling an optically transparent polymeric lid critical for device sealing.

  20. Electron beam induced deposition of silicon nanostructures from a liquid phase precursor.

    PubMed

    Liu, Yin; Chen, Xin; Noh, Kyong Wook; Dillon, Shen J

    2012-09-28

    This work demonstrates electron beam induced deposition of silicon from a SiCl(4) liquid precursor in a transmission electron microscope and a scanning electron microscope. Silicon nanodots of tunable size are reproducibly grown in controlled geometries. The volume of these features increases linearly with deposition time. The results indicate that secondary electrons generated at the substrate surface serve as the primary source of silicon reduction. However, at high current densities the influence of the primary electrons is observed to retard growth. The results demonstrate a new approach to fabricating silicon nanostructures and provide fundamental insights into the mechanism for liquid phase electron beam induced deposition.

  1. Electron beam induced deposition of silicon nanostructures from a liquid phase precursor

    NASA Astrophysics Data System (ADS)

    Liu, Yin; Chen, Xin; Noh, Kyong Wook; Dillon, Shen J.

    2012-09-01

    This work demonstrates electron beam induced deposition of silicon from a SiCl4 liquid precursor in a transmission electron microscope and a scanning electron microscope. Silicon nanodots of tunable size are reproducibly grown in controlled geometries. The volume of these features increases linearly with deposition time. The results indicate that secondary electrons generated at the substrate surface serve as the primary source of silicon reduction. However, at high current densities the influence of the primary electrons is observed to retard growth. The results demonstrate a new approach to fabricating silicon nanostructures and provide fundamental insights into the mechanism for liquid phase electron beam induced deposition.

  2. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1985-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  3. Atomic and molecular layer deposition for surface modification

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Vähä-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi; Sievänen, Jenni; Salo, Erkki

    2014-06-01

    Atomic and molecular layer deposition (ALD and MLD, respectively) techniques are based on repeated cycles of gas–solid surface reactions. A partial monolayer of atoms or molecules is deposited to the surface during a single deposition cycle, enabling tailored film composition in principle down to molecular resolution on ideal surfaces. Typically ALD/MLD has been used for applications where uniform and pinhole free thin film is a necessity even on 3D surfaces. However, thin – even non-uniform – atomic and molecular deposited layers can also be used to tailor the surface characteristics of different non-ideal substrates. For example, print quality of inkjetmore » printing on polymer films and penetration of water into porous nonwovens can be adjusted with low-temperature deposited metal oxide. In addition, adhesion of extrusion coated biopolymer to inorganic oxides can be improved with a hybrid layer based on lactic acid. - Graphical abstract: Print quality of a polylactide film surface modified with atomic layer deposition prior to inkjet printing (360 dpi) with an aqueous ink. Number of printed dots illustrated as a function of 0, 5, 15 and 25 deposition cycles of trimethylaluminum and water. - Highlights: • ALD/MLD can be used to adjust surface characteristics of films and fiber materials. • Hydrophobicity after few deposition cycles of Al{sub 2}O{sub 3} due to e.g. complex formation. • Same effect on cellulosic fabrics observed with low temperature deposited TiO{sub 2}. • Different film growth and oxidation potential with different precursors. • Hybrid layer on inorganic layer can be used to improve adhesion of polymer melt.« less

  4. Electron Beam-Induced Deposition for Atom Probe Tomography Specimen Capping Layers.

    PubMed

    Diercks, David R; Gorman, Brian P; Mulders, Johannes J L

    2017-04-01

    Six precursors were evaluated for use as in situ electron beam-induced deposition capping layers in the preparation of atom probe tomography specimens with a focus on near-surface features where some of the deposition is retained at the specimen apex. Specimens were prepared by deposition of each precursor onto silicon posts and shaped into sub-70-nm radii needles using a focused ion beam. The utility of the depositions was assessed using several criteria including composition and uniformity, evaporation behavior and evaporation fields, and depth of Ga+ ion penetration. Atom probe analyses through depositions of methyl cyclopentadienyl platinum trimethyl, palladium hexafluoroacetylacetonate, and dimethyl-gold-acetylacetonate [Me2Au(acac)] were all found to result in tip fracture at voltages exceeding 3 kV. Examination of the deposition using Me2Au(acac) plus flowing O2 was inconclusive due to evaporation of surface silicon from below the deposition under all analysis conditions. Dicobalt octacarbonyl [Co2(CO)8] and diiron nonacarbonyl [Fe2(CO)9] depositions were found to be effective as in situ capping materials for the silicon specimens. Their very different evaporation fields [36 V/nm for Co2(CO)8 and 21 V/nm for Fe2(CO)9] provide options for achieving reasonably close matching of the evaporation field between the capping material and many materials of interest.

  5. Studies of the Influence of Beam Profile and Cooling Conditions on the Laser Deposition of a Directionally-Solidified Superalloy.

    PubMed

    Yang, Shuo; Du, Dong; Chang, Baohua

    2018-02-04

    In the laser deposition of single crystal and directionally-solidified superalloys, it is desired to form laser deposits with high volume fractions of columnar grains by suppressing the columnar-to-equiaxed transition efficiently. In this paper, the influence of beam profile (circular and square shapes) and cooling conditions (natural cooling and forced cooling) on the geometric morphology and microstructure of deposits were experimentally studied in the laser deposition of a directionally-solidified superalloy, IC10, and the mechanisms of influence were revealed through a numerical simulation of the thermal processes during laser deposition. The results show that wider and thinner deposits were obtained with the square laser beam than those with the circular laser beam, regardless of whether natural or forced cooling conditions was used. The heights and contact angles of deposits were notably increased due to the reduced substrate temperatures by the application of forced cooling for both laser beam profiles. Under natural cooling conditions, columnar grains formed epitaxially at both the center and the edges of the deposits with the square laser beam, but only at the center of the deposits with the circular laser beam; under forced cooling conditions, columnar grains formed at both the center and the edges of deposits regardless of the laser beam profile. The high ratios of thermal gradient and solidification velocity in the height direction of the deposits were favorable to forming deposits with higher volume fractions of columnar grains.

  6. Studies of the Influence of Beam Profile and Cooling Conditions on the Laser Deposition of a Directionally-Solidified Superalloy

    PubMed Central

    Yang, Shuo; Du, Dong

    2018-01-01

    In the laser deposition of single crystal and directionally-solidified superalloys, it is desired to form laser deposits with high volume fractions of columnar grains by suppressing the columnar-to-equiaxed transition efficiently. In this paper, the influence of beam profile (circular and square shapes) and cooling conditions (natural cooling and forced cooling) on the geometric morphology and microstructure of deposits were experimentally studied in the laser deposition of a directionally-solidified superalloy, IC10, and the mechanisms of influence were revealed through a numerical simulation of the thermal processes during laser deposition. The results show that wider and thinner deposits were obtained with the square laser beam than those with the circular laser beam, regardless of whether natural or forced cooling conditions was used. The heights and contact angles of deposits were notably increased due to the reduced substrate temperatures by the application of forced cooling for both laser beam profiles. Under natural cooling conditions, columnar grains formed epitaxially at both the center and the edges of the deposits with the square laser beam, but only at the center of the deposits with the circular laser beam; under forced cooling conditions, columnar grains formed at both the center and the edges of deposits regardless of the laser beam profile. The high ratios of thermal gradient and solidification velocity in the height direction of the deposits were favorable to forming deposits with higher volume fractions of columnar grains. PMID:29401715

  7. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition.

    PubMed

    Lewis, Brett B; Stanford, Michael G; Fowlkes, Jason D; Lester, Kevin; Plank, Harald; Rack, Philip D

    2015-01-01

    Platinum-carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IV)Me3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top-down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. In addition to purification, the post-deposition electron stimulated oxygen purification process enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention.

  8. Influence of Molecular Shape on Molecular Orientation and Stability of Vapor-Deposited Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Walters, Diane M.; Johnson, Noah D.; Ediger, M. D.

    Physical vapor deposition is commonly used to prepare active layers in organic electronics. Recently, it has been shown that molecular orientation and packing can be tuned by changing the substrate temperature during deposition, while still producing macroscopically homogeneous films. These amorphous materials can be highly anisotropic when prepared with low substrate temperatures, and they can exhibit exceptional kinetic stability; films retain their favorable packing when heated to high temperatures. Here, we study the influence of molecular shape on molecular orientation and stability. We investigate disc-shaped molecules, such as TCTA and m-MTDATA, nearly spherical molecules, such as Alq3, and linear molecules covering a broad range of aspect ratios, such as p-TTP and BSB-Cz. Disc-shaped molecules have preferential horizontal orientation when deposited at low substrate temperatures, and their orientation can be tuned by changing the substrate temperature. Alq3 forms stable, amorphous films that are optically isotropic when vapor deposited over a broad range of substrate temperatures. This work may guide the choice of material and deposition conditions for vapor-deposited films used in organic electronics and allow for more efficient devices to be fabricated.

  9. Molecular beam epitaxy growth of SmB6+/-δ thin films

    NASA Astrophysics Data System (ADS)

    Hoffman, Jason; Saleem, Muhammad; Day, James; Bonn, Doug; Hoffman, Jennifer

    SmB6 has emerged as a leading candidate in the search for exotic topological states generated by strong interactions. The synthesis of epitaxial SmB6 thin films presents new avenues to control surface termination, thickness, and strain in this system. In this work, we use molecular beam epitaxy (MBE) to deposit SmB6+/-δ films on insulating (001)-oriented MgO substrates. We use ex-situ x-ray diffraction and magnetotransport measurements to assess the properties of the samples and compare them to previously reported values for single crystals. We also discuss the prospects of using rare-earth substitution to control the correlation strength and alter the topology of the bulk and surface electronic states.

  10. Method for thermal and structural evaluation of shallow intense-beam deposition in matter

    NASA Astrophysics Data System (ADS)

    Pilan Zanoni, André

    2018-05-01

    The projected range of high-intensity proton and heavy-ion beams at energies below a few tens of MeV/A in matter can be as short as a few micrometers. For the evaluation of temperature and stresses from a shallow beam energy deposition in matter conventional numerical 3D models require minuscule element sizes for acceptable element aspect ratio as well as extremely short time steps for numerical convergence. In order to simulate energy deposition using a manageable number of elements this article presents a method using layered elements. This method is applied to beam stoppers and accidental intense-beam impact onto UHV sector valves. In those cases the thermal results from the new method are congruent to those from conventional solid-element and adiabatic models.

  11. A critical literature review of focused electron beam induced deposition

    NASA Astrophysics Data System (ADS)

    van Dorp, W. F.; Hagen, C. W.

    2008-10-01

    An extensive review is given of the results from literature on electron beam induced deposition. Electron beam induced deposition is a complex process, where many and often mutually dependent factors are involved. The process has been studied by many over many years in many different experimental setups, so it is not surprising that there is a great variety of experimental results. To come to a better understanding of the process, it is important to see to which extent the experimental results are consistent with each other and with the existing model. All results from literature were categorized by sorting the data according to the specific parameter that was varied (current density, acceleration voltage, scan patterns, etc.). Each of these parameters can have an effect on the final deposit properties, such as the physical dimensions, the composition, the morphology, or the conductivity. For each parameter-property combination, the available data are discussed and (as far as possible) interpreted. By combining models for electron scattering in a solid, two different growth regimes, and electron beam induced heating, the majority of the experimental results were explained qualitatively. This indicates that the physical processes are well understood, although quantitatively speaking the models can still be improved. The review makes clear that several major issues remain. One issue encountered when interpreting results from literature is the lack of data. Often, important parameters (such as the local precursor pressure) are not reported, which can complicate interpretation of the results. Another issue is the fact that the cross section for electron induced dissociation is unknown. In a number of cases, a correlation between the vertical growth rate and the secondary electron yield was found, which suggests that the secondary electrons dominate the dissociation rather than the primary electrons. Conclusive evidence for this hypothesis has not been found. Finally

  12. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    DOE PAGES

    Lewis, Brett B.; Stanford, Michael G.; Fowlkes, Jason D.; ...

    2015-04-08

    In this paper, platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IV)Me 3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. Finally, in addition to purification, the post-deposition electron stimulated oxygen purification processmore » enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention.« less

  13. (abstract) Optical Scattering and Surface Microroughness of Ion Beam Deposited Au and Pt Thin Films

    NASA Technical Reports Server (NTRS)

    Al-Jumaily, Ghanim A.; Raouf, Nasrat A.; Edlou, Samad M.; Simons, John C.

    1994-01-01

    Thin films of gold and platinum have been deposited onto superpolished fused silica substrates using thermal evaporation, ion assisted deposition (IAD), and ion assisted sputtering. The influence of ion beam flux, thin film material, and deposition rate on the films microroughness have been investigated. Short range surface microroughness of the films has been examined using scanning tunneling microscopy (STM) and atomic force microscopy (AFM). Long range surface microroughness has been characterized using an angle resolved optical scatterometer. Results indicate that ion beam deposited coatings have improved microstructure over thermally evaporated films.

  14. Electrostatic particle trap for ion beam sputter deposition

    DOEpatents

    Vernon, Stephen P.; Burkhart, Scott C.

    2002-01-01

    A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate. The electrostatic charged particle trap enables prevention of charged particles from being deposited on the substrate thereby enabling the deposition of extremely low defect density films, such as required for reflective masks of an extreme ultraviolet lithography (EUVL) system.

  15. 21ST International Symposium on Rarefied Gas Dynamics. Marseille (France) 26-31 July 1998. Book of Abstracts: Volume III, Special Session; Molecular Beams.

    DTIC Science & Technology

    1998-07-30

    contribution we will present size dependent results absorption.of photons from two ultrashort laser pulses on the dynamics of electronic excitations in the at a... cluster beam has confirmed that the nanoparticles in the gas phase and deposited in thin laser -driven flow reactor is capable of producing films. hydrogen ...approximately 7 times larger than neutrals. MB 11 - 138 Molecular Beam Studies of Ammonia Clustered with III Group Metals Produced by Pulsed Laser Reactive

  16. Normal incidence reflectance of ion beam deposited SiC films in the EUV

    NASA Technical Reports Server (NTRS)

    Keski-Kuha, Ritva A. M.; Osantowski, John F.; Herzig, Howard; Gum, Jeffrey S.; Toft, Albert R.

    1988-01-01

    Results are presented from an experimental investigation of the normal-incidence reflectance at 58.4, 92.0, and 121.6 nm wavelength of 30- and 80-nm-thick SiC films produced by ion-beam deposition on unheated 5 x 5-cm microscope slides. The films were deposited in the 2-m evaporator described by Bradford et al. (1969) with chamber base pressure 1 microtorr, operating pressure 40 microtorr, and a 50-62-mA 750-eV Ar ion beam; the reflectance measurements were obtained in the reflector-monochromator system described by Osantowski (1974). Reflectances of over 30 percent were found at 92 and 121.6 nm, almost equal to those of polished CVD films of SiC and degrading only slightly after aging for 4 months. It is suggested that ion-beam deposition may be the best low-temperature technique for coating EUV optics for space astronomy.

  17. Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

    DOE PAGES

    A. T. Bollinger; Wu, J.; Bozovic, I.

    2016-03-15

    In this study, the molecular beam epitaxy(MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

  18. Optimization of ion-atomic beam source for deposition of GaN ultrathin films.

    PubMed

    Mach, Jindřich; Šamořil, Tomáš; Kolíbal, Miroslav; Zlámal, Jakub; Voborny, Stanislav; Bartošík, Miroslav; Šikola, Tomáš

    2014-08-01

    We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electron-impact ion beam source to produce ultra-low energy (20-200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of ≈15 mm by one order of magnitude (j ≈ 1000 nA/cm(2)). Hence, a successful growth of GaN ultrathin films on Si(111) 7 × 7 substrate surfaces at reasonable times and temperatures significantly lower (RT, 300 °C) than in conventional metalorganic chemical vapor deposition technologies (≈1000 °C) was achieved. The chemical composition of these films was characterized in situ by X-ray Photoelectron Spectroscopy and morphology ex situ using Scanning Electron Microscopy. It has been shown that the morphology of GaN layers strongly depends on the relative Ga-N bond concentration in the layers.

  19. Space processing applications of ion beam technology. [surface finishing, welding, milling and film deposition

    NASA Technical Reports Server (NTRS)

    Grodzka, P. G.

    1977-01-01

    Ion thruster engines for spacecraft propulsion can serve as ion beam sources for potential space processing applications. The advantages of space vacuum environments and the possible gravity effects on thruster ion beam materials operations such as thin film growth, ion milling, and surface texturing were investigated. The direct gravity effect on sputter deposition and vapor deposition processes are discussed as well as techniques for cold and warm welding.

  20. Ohmic contact junction of carbon nanotubes fabricated by in situ electron beam deposition

    NASA Astrophysics Data System (ADS)

    Wang, Y. G.; Wang, T. H.; Lin, X. W.; Dravid, V. P.

    2006-12-01

    We present experimental evidence of in situ fabrication of multi-walled carbon nanotube junctions via electron beam induced deposition. The tip-to-tip interconnection of the nanotubes involves the alignment of two nanotubes via a piezodriven nanomanipulator and nano-welding by electron beam deposition. Hydrocarbon contamination from the pump oil vapour of the vacuum system of the TEM chamber was used as the solder; this is superior to the already available metallic solders because its composition is identical to the carbon nanotube. The hydrocarbon deposition, with perfect wettability, on the nanotubes establishes strong mechanical binding between the two nanotubes to form an integrated structure. Consequently, the nanotubes cross-linked by the hydrocarbon solder produce good electrical and mechanical connections. The joint dimension was determined by the size of the electron beam, which results in a sound junction with well-defined geometry and the smallest junction size obtained so far. In situ electric measurement showed a linear current-voltage property for the multi-walled nanotube junction.

  1. Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim; Engel-Herbert, Roman

    2016-07-01

    The synthesis of a 50 unit cell thick n = 4 Srn+1TinO3n+1 (Sr5Ti4O13) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO2 layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO2 layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO3 perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.

  2. Molecular Orientation in Two Component Vapor-Deposited Glasses: Effect of Substrate Temperature and Molecular Shape

    NASA Astrophysics Data System (ADS)

    Powell, Charles; Jiang, Jing; Walters, Diane; Ediger, Mark

    Vapor-deposited glasses are widely investigated for use in organic electronics including the emitting layers of OLED devices. These materials, while macroscopically homogenous, have anisotropic packing and molecular orientation. By controlling this orientation, outcoupling efficiency can be increased by aligning the transition dipole moment of the light-emitting molecules parallel to the substrate. Light-emitting molecules are typically dispersed in a host matrix, as such, it is imperative to understand molecular orientation in two-component systems. In this study we examine two-component vapor-deposited films and the orientations of the constituent molecules using spectroscopic ellipsometry, UV-vis and IR spectroscopy. The role of temperature, composition and molecular shape as it effects molecular orientation is examined for mixtures of DSA-Ph in Alq3 and in TPD. Deposition temperature relative to the glass transition temperature of the two-component mixture is the primary controlling factor for molecular orientation. In mixtures of DSA-Ph in Alq3, the linear DSA-Ph has a horizontal orientation at low temperatures and slight vertical orientation maximized at 0.96Tg,mixture, analogous to one-component films.

  3. Molecular-beam Studies of Primary Photochemical Processes

    DOE R&D Accomplishments Database

    Lee, Y. T.

    1982-12-01

    Application of the method of molecular-beam photofragmentation translational spectroscopy to the investigation of primary photochemical processes of polyatomic molecules is described. Examples will be given to illustrate how information concerning the energetics, dynamics, and mechanism of dissociation processes can be obtained from the precise measurements of angular and velocity distributions of products in an experiment in which a well-defined beam of molecules is crossed with a laser.

  4. Constructing, connecting and soldering nanostructures by environmental electron beam deposition

    NASA Astrophysics Data System (ADS)

    Mølhave, Kristian; Nørgaard Madsen, Dorte; Dohn, Søren; Bøggild, Peter

    2004-08-01

    Highly conductive nanoscale deposits with solid gold cores can be made by electron beam deposition in an environmental scanning electron microscope (ESEM), suggesting the method to be used for constructing, connecting and soldering nanostructures. This paper presents a feasibility study for such applications. We identify several issues related to contamination and unwanted deposition, relevant for deposition in both vacuum (EBD) and environmental conditions (EEBD). We study relations between scan rate, deposition rate, angle and line width for three-dimensional structures. Furthermore, we measure the conductivity of deposits containing gold cores, and find these structures to be highly conductive, approaching the conductivity of solid gold and capable of carrying high current densities. Finally, we study the use of the technique for soldering nanostructures such as carbon nanotubes. Based on the presented results we are able to estimate limits for the applicability of the method for the various applications, but also demonstrate that it is a versatile and powerful tool for nanotechnology within these limits.

  5. Structure and properties of polyaniline nanocomposite coatings containing gold nanoparticles formed by low-energy electron beam deposition

    NASA Astrophysics Data System (ADS)

    Wang, Surui; Rogachev, A. A.; Yarmolenko, M. A.; Rogachev, A. V.; Xiaohong, Jiang; Gaur, M. S.; Luchnikov, P. A.; Galtseva, O. V.; Chizhik, S. A.

    2018-01-01

    Highly ordered conductive polyaniline (PANI) coatings containing gold nanoparticles were prepared by low-energy electron beam deposition method, with emeraldine base and chloroauric acid used as target materials. The molecular and chemical structure of the layers was studied by Fourier transform infrared, Raman, UV-vis and X-ray photoelectron spectroscopy. The morphology of the coatings was investigated by atomic force and transmission electron microscopy. Conductive properties were obtained by impedance spectroscopy method and scanning spreading resistance microscopy mode at the micro- and nanoscale. It was found that the emeraldine base layers formed from the products of electron-beam dispersion have extended, non-conductive polymer chains with partially reduced structure, with the ratio of imine and amine groups equal to 0.54. In case of electron-beam dispersion of the emeraldine base and chloroauric acid, a protoemeraldine structure is formed with conductivity 0.1 S/cm. The doping of this structure was carried out due to hydrochloric acid vapor and gold nanoparticles formed by decomposition of chloroauric acid, which have a narrow size distribution, with the most probable diameter about 40 nm. These gold nanoparticles improve the conductivity of the thin layers of PANI + Au composite, promoting intra- and intermolecular charge transfer of the PANI macromolecules aligned along the coating surface both at direct and alternating voltage. The proposed deposition method of highly oriented, conductive nanocomposite PANI-based coatings may be used in the direct formation of functional layers on conductive and non-conductive substrates.

  6. An investigation of nonuniform dose deposition from an electron beam

    NASA Astrophysics Data System (ADS)

    Lilley, William; Luu, Kieu X.

    1994-08-01

    In a search for an explanation of nonuniform electron-beam dose deposition, the integrated tiger series (ITS) of coupled electron/photon Monte Carlo transport codes was used to calculate energy deposition in the package materials of an application-specific integrated circuit (ASIC) while the thicknesses of some of the materials were varied. The thicknesses of three materials that were in the path of an electron-beam pulse were varied independently so that analysis could determine how the radiation dose measurements using thermoluminescent dosimeters (TLD's) would be affected. The three materials were chosen because they could vary during insertion of the die into the package or during the process of taking dose measurements. The materials were aluminum, HIPEC (a plastic), and silver epoxy. The calculations showed that with very small variations in thickness, the silver epoxy had a large effect on the dose uniformity over the area of the die.

  7. Molecular-Beam-Epitaxy Program

    NASA Technical Reports Server (NTRS)

    Sparks, Patricia D.

    1988-01-01

    Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.

  8. Electron-Beam-Induced Deposition as a Technique for Analysis of Precursor Molecule Diffusion Barriers and Prefactors.

    PubMed

    Cullen, Jared; Lobo, Charlene J; Ford, Michael J; Toth, Milos

    2015-09-30

    Electron-beam-induced deposition (EBID) is a direct-write chemical vapor deposition technique in which an electron beam is used for precursor dissociation. Here we show that Arrhenius analysis of the deposition rates of nanostructures grown by EBID can be used to deduce the diffusion energies and corresponding preexponential factors of EBID precursor molecules. We explain the limitations of this approach, define growth conditions needed to minimize errors, and explain why the errors increase systematically as EBID parameters diverge from ideal growth conditions. Under suitable deposition conditions, EBID can be used as a localized technique for analysis of adsorption barriers and prefactors.

  9. Photoionization studies with molecular beams

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ng, C.Y.

    1976-09-01

    A molecular beam photoionization apparatus which combines the advantages of both the molecular beam method with photoionization mass spectrometry has been designed and constructed for carrying out some unique photoionization experiments. Rotational cooling during the supersonic expansion has resulted in high resolution photoionization efficiency curves for NO, ICl, C/sub 2/H/sub 2/ and CH/sub 3/I. The analysis of these spectra has yielded ionization potentials for these molecules to an accuracy of +- 3 MeV. Detailed autoionization structures were also resolved. This allows the investigation of the selection rules for autoionization, and the identification of the Rydberg series which converge to themore » excited states of the molecular ions. The degree of relaxation for thermally populated excited states has been examined using NO and ICl as examples. As a result of adiabatic cooling, a small percentage of dimers is also formed during the expansion. The photoionization efficiency curves for (NO)/sub 2/, ArICl, Ar/sub 2/, Kr/sub 2/ and Xe/sub 2/ have been obtained near the thresholds. Using the known dissociation energies of the (NO)/sub 2/, Ar/sub 2/, Kr/sub 2/ and Xe/sub 2/ van der Waals molecules, the corresponding dissociation energies for NO-NO/sup +/, Ar/sub 2//sup +/, Kr/sub 2//sup +/, and Xe/sub 2//sup +/ have been determined. The ionization mechanisms for this class of molecules are examined and discussed.« less

  10. An atomic carbon source for high temperature molecular beam epitaxy of graphene.

    PubMed

    Albar, J D; Summerfield, A; Cheng, T S; Davies, A; Smith, E F; Khlobystov, A N; Mellor, C J; Taniguchi, T; Watanabe, K; Foxon, C T; Eaves, L; Beton, P H; Novikov, S V

    2017-07-26

    We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic carbon, which diffuses through the walls of a Joule-heated tantalum tube filled with graphite powder. We demonstrate deposition of carbon on sapphire with carbon deposition rates up to 12 nm/h. Atomic force microscopy measurements reveal the formation of hexagonal moiré patterns when graphene monolayers are grown on hBN flakes. The Raman spectra of the graphene layers grown on hBN and sapphire with the sublimation carbon source and the atomic carbon source are similar, whilst the nature of the carbon aggregates is different - graphitic with the sublimation carbon source and amorphous with the atomic carbon source. At MBE growth temperatures we observe etching of the sapphire wafer surface by the flux from the atomic carbon source, which we have not observed in the MBE growth of graphene with the sublimation carbon source.

  11. Effect of ion beam irradiation on the structure of ZnO films deposited by a dc arc plasmatron.

    PubMed

    Penkov, Oleksiy V; Lee, Heon-Ju; Plaksin, Vadim Yu; Ko, Min Gook; Joa, Sang Beom; Yim, Chan Joo

    2008-02-01

    The deposition of polycrystalline ZnO film on a cold substrate was performed by using a plasmatron in rough vacuum condition. Low energy oxygen ion beam generated by a cold cathode ion source was introduced during the deposition process. The change of film property on the ion beam energy was checked. It is shown that irradiation by 200 eV ions improves crystalline structure of the film. Increasing of ion beam energy up to 400 eV leads to the degradation of a crystalline structure and decreases the deposition rate.

  12. InN island shape and its dependence on growth condition of molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Cao, Y. G.; Xie, M. H.; Liu, Y.; Ng, Y. F.; Wu, H. S.; Tong, S. Y.

    2003-12-01

    During molecular-beam epitaxy of InN films on GaN(0001) surface, three-dimensional (3D) islands are observed following an initial wetting layer formation. Depending on deposition condition, the 3D islands take different shapes. Pyramidal islands form when excess nitrogen fluxes are used, whereas pillar-shaped islands are obtained when excess indium fluxes are employed. The pillar-shaped islands are identified to represent the equilibrium shape, whereas the pyramidal ones are limited by kinetics. As the size of islands increases, their aspect ratio shows a decreasing trend, which is attributed to a gradual relaxation of strain in the layer by defects.

  13. Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim

    2016-07-25

    The synthesis of a 50 unit cell thick n = 4 Sr{sub n+1}Ti{sub n}O{sub 3n+1} (Sr{sub 5}Ti{sub 4}O{sub 13}) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO{sub 2} layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO{sub 2} layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried outmore » over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO{sub 3} perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.« less

  14. Valved molecular beam skimmer

    NASA Astrophysics Data System (ADS)

    Marceca, Ernesto; Becker, Jörg A.; Hensel, Friedrich

    1997-08-01

    Under routine source conditions, the optimum nozzle-skimmer distance to achieve maximum molecular beam intensities is within the range of a few millimeters. In cases where double skimming is additionally required, the distance between the skimmers should be kept small in order to sample a sufficiently large solid angle of the beam and hence maintain a good enough intensity. These two facts make it normally difficult to isolate the first from the second expansion chamber using a commercial vacuum gate valve due to the lack of remaining space. This note presents the design of a vacuum-tight valve which allows the aperture of a skimmer to be closed by plugging a needle directly against its internal conical wall. The valve can be driven manually or pneumatically from outside the vacuum chamber. The helium conductance of the valve was measured to be better than 1×10-8 mbar×l×s-1 for a helium partial pressure difference of 1 bar.

  15. Growth of biaxially textured template layers using ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Park, Seh-Jin

    A two-step IBAD (ion beam assisted deposition) method is investigated, and compared to the conventional IBAD methods. The two step method uses surface energy anisotropy to achieve uniaxial texture and ion beam irradiation for biaxial texture. The biaxial texture was achieved by selective surface etching and enhanced by grain overgrowth. In this method, biaxial texture alignment is performed on a (001) uniaxially textured buffer layer. The material selected for achieving uniaxial texture, YBCO (YBa2Cu3O7-x), has strong surface energy anisotropy. YBCO is chemically susceptible to the reaction with the adjacent layer. Yttria stabilized zirconia (YSZ) was used to prevent the reaction between YBCO and the substrates (polycrystalline Ni alloy [Hastelloy] and amorphous SiNx/Si). A SrTiO3 layer was deposited on the uniaxially textured YBCO layer to retard stoichiometry change with subsequent processing. STO is well lattice matched with YBCO. A top layer of Ni was then deposited. The Ni layer was used for studying the effect of grain overgrowth. The obtained uniaxial Ni films were used for subsequent ion beam processing. Ar ion beam irradiation onto the uniaxially textured Ni film was used to study the effect of selective grain etching in achieving in-plane aligned Ni grains. Additional Ni deposition induces the overgrowth of the in-plane aligned Ni grains and, finally, the overall in-plane alignment. The in-plane alignment is examined with XRD phi scan. The effect of surface polarity of insulating oxide substrates on the epitaxial growth behavior was investigated. The lattice strain energy was the most important factor for determining the orientation of Ni films on a non-polar surface. However, for a polar surface, the surface energy plays an important role in determining the final orientation of the Ni films based on the experimental and theoretical results. Y2O3 growth behavior was also studied. The lattice strain energy is the most important factor for Y2O3 growth on

  16. Optical and Structural Properties of Microcrystalline GaN on an Amorphous Substrate Prepared by a Combination of Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu

    2016-05-01

    Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the othermore » hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.« less

  17. Expanding the molecular-ruler process through vapor deposition of hexadecanethiol

    PubMed Central

    Patron, Alexandra M; Hooker, Timothy S; Santavicca, Daniel F

    2017-01-01

    The development of methods to produce nanoscale features with tailored chemical functionalities is fundamental for applications such as nanoelectronics and sensor fabrication. The molecular-ruler process shows great utility for this purpose as it combines top-down lithography for the creation of complex architectures over large areas in conjunction with molecular self-assembly, which enables precise control over the physical and chemical properties of small local features. The molecular-ruler process, which most commonly uses mercaptoalkanoic acids and metal ions to generate metal-ligated multilayers, can be employed to produce registered nanogaps between metal features. Expansion of this methodology to include molecules with other chemical functionalities could greatly expand the overall versatility, and thus the utility, of this process. Herein, we explore the use of alkanethiol molecules as the terminating layer of metal-ligated multilayers. During this study, it was discovered that the solution deposition of alkanethiol molecules resulted in low overall surface coverage with features that varied in height. Because features with varied heights are not conducive to the production of uniform nanogaps via the molecular-ruler process, the vapor-phase deposition of alkanethiol molecules was explored. Unlike the solution-phase deposition, alkanethiol islands produced by vapor-phase deposition exhibited markedly higher surface coverages of uniform heights. To illustrate the applicability of this method, metal-ligated multilayers, both with and without an alkanethiol capping layer, were utilized to create nanogaps between Au features using the molecular-ruler process. PMID:29181290

  18. Studies on ion scattering and sputtering processes relevant to ion beam sputter deposition of multicomponent thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Auciello, O.; Ameen, M.S.; Kingon, A.I.

    1989-01-01

    Results from computer simulation and experiments on ion scattering and sputtering processes in ion beam sputter deposition of high Tc superconducting and ferroelectric thin films are presented. It is demonstrated that scattering of neutralized ions from the targets can result in undesirable erosion of, and inert gas incorporation in, the growing films, depending on the ion/target atom ass ratio and ion beam angle of incidence/target/substrate geometry. The studies indicate that sputtering Kr{sup +} or Xe{sup +} ions is preferable to the most commonly used Ar{sup +} ions, since the undesirable phenomena mentioned above are minimized for the first two ions.more » These results are used to determine optimum sputter deposition geometry and ion beam parameters for growing multicomponent oxide thin films by ion beam sputter-deposition. 10 refs., 5 figs.« less

  19. Characterization of high-{kappa} LaLuO{sub 3} thin film grown on AlGaN/GaN heterostructure by molecular beam deposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yang Shu; Huang Sen; Chen Hongwei

    2011-10-31

    We report the study of high-dielectric-constant (high-{kappa}) dielectric LaLuO{sub 3} (LLO) thin film that is grown on AlGaN/GaN heterostructure by molecular beam deposition (MBD). The physical properties of LLO on AlGaN/GaN heterostrucure have been investigated with atomic force microscopy, x-ray photoelectron spectroscopy, and TEM. It is revealed that the MBD-grown 16 nm-thick LLO film is polycrystalline with a thin ({approx}2 nm) amorphous transition layer at the LLO/GaN interface. The bandgap of LLO is derived as 5.3 {+-} 0.04 eV from O1s energy loss spectrum. Capacitance-voltage (C-V) characteristics of a Ni-Au/LLO/III-nitride metal-insulator-semiconductor diode exhibit small frequency dispersion (<2%) and reveal amore » high effective dielectric constant of {approx}28 for the LLO film. The LLO layer is shown to be effective in suppressing the reverse and forward leakage current in the MIS diode. In particular, the MIS diode forward current is reduced by 7 orders of magnitude at a forward bias of 1 V compared to a conventional Ni-Au/III-nitride Schottky diode.« less

  20. Determination of atomic hydrogen in non-thermal hydrogen plasmas by means of molecular beam threshold ionization mass spectrometry.

    PubMed

    Wang, Wei-Guo; Xu, Yong; Yang, Xue-Feng; Wang, Wen-Chun; Zhu, Ai-Min

    2005-01-01

    Atomic hydrogen plays important roles in chemical vapor deposition of functional materials, plasma etching and new approaches to chemical synthesis of hydrogen-containing compounds. The present work reports experimental determinations of atomic hydrogen near the grounded electrode in medium-pressure dielectric barrier discharge hydrogen plasmas by means of molecular beam threshold ionization mass spectrometry (MB-TIMS). At certain discharge conditions (a.c. frequency of 24 kHz, 28 kV of peak-to-peak voltage), the measured hydrogen dissociation fraction is decreased from approximately 0.83% to approximately 0.14% as the hydrogen pressure increases from 2.0 to 14.0 Torr. A simulation method for extraction of the approximate electron beam energy distribution function in the mass spectrometer ionizer and a semi-quantitative approach to calibrate the mass discrimination effect caused by the supersonic beam formation and the mass spectrometer measurement are reported. Copyright 2005 John Wiley & Sons, Ltd.

  1. Molecular-beam gas-sampling system

    NASA Technical Reports Server (NTRS)

    Young, W. S.; Knuth, E. L.

    1972-01-01

    A molecular beam mass spectrometer system for rocket motor combustion chamber sampling is described. The history of the sampling system is reviewed. The problems associated with rocket motor combustion chamber sampling are reported. Several design equations are presented. The results of the experiments include the effects of cooling water flow rates, the optimum separation gap between the end plate and sampling nozzle, and preliminary data on compositions in a rocket motor combustion chamber.

  2. Optical properties of YbF3-CaF2 composite thin films deposited by electron-beam evaporation

    NASA Astrophysics Data System (ADS)

    Wang, Songlin; Mi, Gaoyuan; Zhang, Jianfu; Yang, Chongmin

    2018-03-01

    We studied electron-beam evaporated YbF3-CaF2 composite films on ZnS substrate at different deposition parameters. The optical properties of films have been fitted, the surface roughness have been measured by AFM. The results of experiments indicated that increased the refractive indices, extinction coefficients, and surface roughness at higher deposition rate. The refractive index of composite film deposited by electron-beam evaporation with assisted-ion source was obviously higher than it without assisted-ion source.

  3. Comparison of electrical properties and deep traps in p-AlxGa1-xN grown by molecular beam epitaxy and metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Dabiran, A. M.; Chow, P. P.; Wowchak, A. M.; Lee, In-Hwan; Ju, Jin-Woo; Pearton, S. J.

    2009-10-01

    The electrical properties, admittance spectra, microcathodoluminescence, and deep trap spectra of p-AlGaN films with an Al mole fraction up to 45% grown by both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were compared. The ionization energy of Mg increases from 0.15 to 0.17 eV in p-GaN to 0.3 eV in 45% Al p-AlGaN. In p-GaN films grown by MBE and MOCVD and in MOCVD grown p-AlGaN, we observed additional acceptors with a concentration an order lower than that of Mg acceptors, with a higher hole capture cross section and an ionization energy close to that of Mg. For some of the MBE grown p-AlGaN, we also detected the presence of additional acceptor centers, but in that case the centers were located near the p-AlGaN layer interface with the semi-insulating AlGaN buffer and showed activation energies considerably lower than those of Mg.

  4. A low-energy metal-ion source for primary ion deposition and accelerated ion doping during molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Hasan, M.-A.; Knall, J.; Barnett, S. A.; Rockett, A.; Sundgren, J.-E.

    1987-10-01

    A single-grid electron-impact ultrahigh vacuum (UHV) compatible low-energy ion gun capable of operating with a low vapor pressure solid source material such as In is presented. The gun consists of a single chamber which integrates the functions of an effusion cell, a vapor transport tube, and a glow discharge ionizer. The initial results of experiments designed to study the role of ion/surface interactions during nucleation and the early stages of crystal growth in UHV revealed that, for deposition on amorphous substrates, the use of a partially ionized In(+) beam resulted in a progressive shift towards larger island sizes, a decreased rate of secondary nucleation, and a more uniform island size distribution.

  5. A low Earth orbit molecular beam space simulation facility

    NASA Technical Reports Server (NTRS)

    Cross, J. B.

    1984-01-01

    A brief synopsis of the low Earth orbit (LEO) satellite environment is presented including neutral and ionic species. Two ground based atomic and molecular beam instruments are described which are capable of simulating the interaction of spacecraft surfaces with the LEO environment and detecting the results of these interactions. The first detects mass spectrometrically low level fluxes of reactively and nonreactively surface scattered species as a function of scattering angle and velocity while the second ultrahigh velocity (UHV) molecular beam, laser induced fluorescence apparatus is capable of measuring chemiluminescence produced by either gas phase or gas-surface interactions. A number of proposed experiments are described.

  6. Molecular Binding Contributes to Concentration Dependent Acrolein Deposition in Rat Upper Airways: CFD and Molecular Dynamics Analyses

    PubMed Central

    Hu, Qin; Si, Xiuhua April

    2018-01-01

    Existing in vivo experiments show significantly decreased acrolein uptake in rats with increasing inhaled acrolein concentrations. Considering that high-polarity chemicals are prone to bond with each other, it is hypothesized that molecular binding between acrolein and water will contribute to the experimentally observed deposition decrease by decreasing the effective diffusivity. The objective of this study is to quantify the probability of molecular binding for acrolein, as well as its effects on acrolein deposition, using multiscale simulations. An image-based rat airway geometry was used to predict the transport and deposition of acrolein using the chemical species model. The low Reynolds number turbulence model was used to simulate the airflows. Molecular dynamic (MD) simulations were used to study the molecular binding of acrolein in different media and at different acrolein concentrations. MD results show that significant molecular binding can happen between acrolein and water molecules in human and rat airways. With 72 acrolein embedded in 800 water molecules, about 48% of acrolein compounds contain one hydrogen bond and 10% contain two hydrogen bonds, which agreed favorably with previous MD results. The percentage of hydrogen-bonded acrolein compounds is higher at higher acrolein concentrations or in a medium with higher polarity. Computational dosimetry results show that the size increase caused by the molecular binding reduces the effective diffusivity of acrolein and lowers the chemical deposition onto the airway surfaces. This result is consistent with the experimentally observed deposition decrease at higher concentrations. However, this size increase can only explain part of the concentration-dependent variation of the acrolein uptake and acts as a concurrent mechanism with the uptake-limiting tissue ration rate. Intermolecular interactions and associated variation in diffusivity should be considered in future dosimetry modeling of high

  7. Rovibrational optical pumping of a molecular beam

    NASA Astrophysics Data System (ADS)

    Cournol, A.; Pillet, P.; Lignier, H.; Comparat, D.

    2018-03-01

    The preparation of molecules in well-defined internal states is essential for various studies in fundamental physics and physical chemistry. It is thus of particular interest to find methods that increase the brightness of molecular beams. Here, we report on rotational and vibrational pumpings of a supersonic beam of barium monofluoride molecules. With respect to previous works, the time scale of optical vibrational pumping has been greatly reduced by enhancing the spectral power density in the vicinity of the appropriate molecular transitions. We demonstrate a complete transfer of the rovibrational populations lying in v″=1 -3 into the vibrational ground-state v″=0 . Rotational pumping, which requires efficient vibrational pumping, has been also demonstrated. According to a Maxwell-Boltzmann description, the rotational temperature of our sample has been reduced by a factor of ˜8 . In this fashion, the population of the lowest rotational levels increased by more than one order of magnitude.

  8. Measuring Incorporation Of Arsenic In Molecular-Beam Expitaxy

    NASA Technical Reports Server (NTRS)

    Lewis, Blair F.; Fernandez, Rouel F.; Madhukar, Anupam; Grunthaner, Frank J.

    1988-01-01

    Changes in surface layers cause oscillations in RHEED measurements. Specular RHEED Beam intensity measured before, during, and after deposition of seven to eight monomolecular layers of gallium during 1.5 seconds. Arsenic pressure was 1.7x10 to the negative seventh power torr (2.3x10 to the negative fifth power Pa) throughout measurements.

  9. Low resistivity and low compensation ratio Ga-doped ZnO films grown by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Chen, Cheng-Yu; Hsiao, Li-Han; Chyi, Jen-Inn

    2015-09-01

    In this study, Ga-doped ZnO (GZO) thin films were deposited on GaN templates by using plasma-assisted molecular beam epitaxy. To obtain low resistivity GZO films, in-situ post-annealing under Zn overpressure was carried out to avoid the generation of acceptor-liked Zn vacancies. The resultant films showed optical transparency over 95% in the visible spectral range. By reducing the acceptor-like defects, GZO films with compensation ratio near 0.4 and resistivity simultaneously lower than 1×10-4 Ω cm have been successfully demonstrated.

  10. Experimental, theoretical, and device application development of nanoscale focused electron-beam-induced deposition

    NASA Astrophysics Data System (ADS)

    Randolph, Steven Jeffrey

    Electron-beam-induced deposition (EBID) is a highly versatile nanofabrication technique that allows for growth of a variety of materials with nanoscale precision and resolution. While several applications and studies of EBID have been reported and published, there is still a significant lack of understanding of the complex mechanisms involved in the process. Consequently, EBID process control is, in general, limited and certain common experimental results regarding nanofiber growth have yet to be fully explained. Such anomalous results have been addressed in this work both experimentally and by computer simulation. Specifically, a correlation between SiOx nanofiber deposition observations and the phenomenon of electron beam heating (EBH) was shown by comparison of thermal computer models and experimental results. Depending on the beam energy, beam current, and nanostructure geometry, the heat generated can be substantial and may influence the deposition rate. Temperature dependent EBID growth experiments qualitatively verified the results of the EBH model. Additionally, EBID was used to produce surface image layers for maskless, direct-write lithography (MDL). A single layer process used directly written SiOx features as a masking layer for amorphous silicon thin films. A bilayer process implemented a secondary masking layer consisting of standard photoresist into which a pattern---directly written by EBID tungsten---was transferred. The single layer process was found to be extremely sensitive to the etch selectivity of the plasma etch. In the bilayer process, EBID tungsten was written onto photoresist and the pattern transferred by means of oxygen plasma dry development following a brief refractory descum. Conditions were developed to reduce the spatial spread of electrons in the photoresist layer and obtain ˜ 35 nm lines. Finally, an EBID-based technique for field emitter repair was applied to the Digital Electrostatically focused e-beam Array Lithography (DEAL

  11. Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wofford, Joseph M.; Speck, Florian; Seyller, Thomas; Lopes, Joao Marcelo J.; Riechert, Henning

    2016-07-01

    The efficacy of Ni as a surfactant to improve the crystalline quality of graphene grown directly on dielectric Al2O3(0001) substrates by molecular beam epitaxy is examined. Simultaneously exposing the substrate to a Ni flux throughout C deposition at 950 °C led to improved charge carrier mobility and a Raman spectrum indicating less structural disorder in the resulting nanocrystalline graphene film. X-ray photoelectron spectroscopy confirmed that no residual Ni could be detected in the film and showed a decrease in the intensity of the defect-related component of the C1s level. Similar improvements were not observed when a lower substrate temperature (850 °C) was used. A close examination of the Raman spectra suggests that Ni reduces the concentration of lattice vacancies in the film, possibly by catalytically assisting adatom incorporation.

  12. Study of thin film growth kinetics of homoepitaxy by molecular beam epitaxy and pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Shin, Byungha

    This thesis presents an extensive study of the growth kinetics during low temperature homoepitaxy by Molecular Beam Epitaxy (MBE) and Pulsed Laser Deposition (PLD) of our model system Ge(001). The range of the study covers from the sub-monolayer (sub-ML) regime to the later stage where film thickness amounts to a few thousand MLs; it also covers epitaxial breakdown in which epitaxial growth is no longer sustained and the growing phase becomes amorphous. First, we have conducted a systematic investigation of the phase shift of the RHEED intensity oscillations during Ge(001) homoepitaxy MBE for a wide range of diffraction conditions. We conclude that the phase shift is caused by the overlap of the specular spot and the Kikuchi features, in contrast to models involving dynamical scattering theory for the phase shift. We have studied the sub-ML growth of Ge(001) homoepitaxy by MBE at low temperatures using RHEED intensity oscillations obtained for a range of low incidence angles where the influence of the dynamical nature of electron scattering such as the Kikuchi features is minimized. We have developed a new model for RHEED specular intensity that includes the diffuse scattering off surface steps and the layer interference between terraces of different heights using the kinematic approximation. By using the model to interpret the measured RHEED intensity, we find the evolution of the coverage of the first 2--3 layers, from which we infer the ES barrier height to be 0.077 +/- 0.014 eV. Finally, using a dual MBE-PLD UHV chamber, we have conducted experiments under identical thermal, background, and surface preparation conditions to compare Ge(001) homoepitaxial growth morphology in PLD and MBE at low temperatures. To isolate the effect of kinetic energy of depositing species during PLD, we varied the average kinetic energy: ˜450 eV in PLD-HKE, ˜300 eV in PLD-LKE, and <1 eV in PLD-TH. At 150°C, we find that in PLD-LKE and in MBE the film morphology evolves in a

  13. Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Huang, Jie; Lucero, Antonio T.; Cheng, Lanxia; Hwang, Hyeon Jun; Ha, Min-Woo; Kim, Jiyoung

    2015-03-01

    In this study, we have deposited organic-inorganic hybrid semiconducting hydroquinone (HQ)/zinc oxide (ZnO) superlattices using molecular-atomic layer deposition, which enables accurate control of film thickness, excellent uniformity, and sharp interfaces at a low deposition temperature (150 °C). Self-limiting growth of organic layers is observed for the HQ precursor on ZnO surface. Nano-laminates were prepared by varying the number of HQ to ZnO cycles in order to investigate the physical and electrical effects of different HQ to ZnO ratios. It is indicated that the addition of HQ layer results in enhanced mobility and reduced carrier concentration. The highest Hall mobility of approximately 2.3 cm2/V.s and the lowest n-type carrier concentration of approximately 1.0 × 1018/cm3 were achieved with the organic-inorganic superlattice deposited with a ratio of 10 ZnO cycles to 1 HQ cycle. This study offers an approach to tune the electrical transport characteristics of ALD ZnO matrix thin films using an organic dopant. Moreover, with organic embedment, this nano-laminate material may be useful for flexible electronics.

  14. Thermal imaging for assessment of electron-beam freeform fabrication (EBF3) additive manufacturing deposits

    NASA Astrophysics Data System (ADS)

    Zalameda, Joseph N.; Burke, Eric R.; Hafley, Robert A.; Taminger, Karen M.; Domack, Christopher S.; Brewer, Amy; Martin, Richard E.

    2013-05-01

    Additive manufacturing is a rapidly growing field where 3-dimensional parts can be produced layer by layer. NASA's electron beam freeform fabrication (EBF3) technology is being evaluated to manufacture metallic parts in a space environment. The benefits of EBF3 technology are weight savings to support space missions, rapid prototyping in a zero gravity environment, and improved vehicle readiness. The EBF3 system is composed of 3 main components: electron beam gun, multi-axis position system, and metallic wire feeder. The electron beam is used to melt the wire and the multi-axis positioning system is used to build the part layer by layer. To insure a quality deposit, a near infrared (NIR) camera is used to image the melt pool and solidification areas. This paper describes the calibration and application of a NIR camera for temperature measurement. In addition, image processing techniques are presented for deposit assessment metrics.

  15. Adsorption of n-butane on graphene/Ru(0001)—A molecular beam scattering study

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sivapragasam, Nilushni; Nayakasinghe, Mindika T.; Burghaus, Uwe, E-mail: uwe.burghaus@ndsu.edu

    2016-07-15

    Adsorption kinetics/dynamics of n-butane on graphene, physical vapor deposited on Ru(0001) (hereafter G/Ru), and bare Ru(0001) (hereafter Ru) are discussed. The chemical activity of the supported-graphene as well as the support was probed by thermal desorption spectroscopy (adsorption kinetics). In addition and to the best of our knowledge, for the first time, molecular beam scattering data of larger molecules were collected for graphene (probing the adsorption dynamics). Furthermore, samples were inspected by x-ray photoelectron spectroscopy and Auger electron spectroscopy. At the measuring conditions used here, n-butane adsorption kinetics/dynamics are molecular and nonactivated. Binding energies of butane on Ru and G/Rumore » are indistinguishable within experimental uncertainty. Thus, G/Ru is “kinetically transparent.” Initial adsorption probabilities, S{sub 0}, of n-butane decrease with increasing impact energy (0.76–1.72 eV) and are adsorption temperature independent for both Ru and G/Ru, again consistent with molecular adsorption. Also, S{sub 0} of Ru and G/Ru are indistinguishable within experimental uncertainty. Thus, G/Ru is “dynamically transparent.” Coverage dependent adsorption probabilities indicate precursor effects for graphene/Ru.« less

  16. Substrate temperature controls molecular orientation in two-component vapor-deposited glasses

    DOE PAGES

    Jiang, J.; Walters, D. M.; Zhou, D.; ...

    2016-02-22

    Vapor-deposited glasses can be anisotropic and molecular orientation is important for organic electronics applications. In organic light emitting diodes (OLEDs), for example, the orientation of dye molecules in two-component emitting layers significantly influences emission efficiency. Here we investigate how substrate temperature during vapor deposition influences the orientation of dye molecules in a model two-component system. We determine the average orientation of a linear blue light emitter 1,4-di-[4-( N,N-diphenyl)amino]styrylbenzene (DSA-Ph) in mixtures with aluminum-tris(8-hydroxyquinoline) (Alq 3) by spectroscopic ellipsometry and IR dichroism. We find that molecular orientation is controlled by the ratio of the substrate temperature during deposition and the glassmore » transition temperature of the mixture. Furthermore, these findings extend recent results for single component vapor-deposited glasses and suggest that, during vapor deposition, surface mobility allows partial equilibration towards orientations preferred at the free surface of the equilibrium liquid.« less

  17. Reactive molecular beam epitaxial growth and in situ photoemission spectroscopy study of iridate superlattices

    NASA Astrophysics Data System (ADS)

    Fan, C. C.; Liu, Z. T.; Cai, S. H.; Wang, Z.; Xiang, P.; Zhang, K. L.; Liu, W. L.; Liu, J. S.; Wang, P.; Zheng, Y.; Shen, D. W.; You, L. X.

    2017-08-01

    High-quality (001)-oriented perovskite [(SrIrO3)m/(SrTiO3)] superlattices (m=1/2, 1, 2, 3 and ∞ ) films have been grown on SrTiO3(001) epitaxially using reactive molecular beam epitaxy. Compared to previously reported superlattices synthesized by pulsed laser deposition, our superlattices exhibit superior crystalline, interface and surface structure, which have been confirmed by high-resolution X-ray diffraction, scanning transmission electron microscopy and atomic force microscopy, respectively. The transport measurements confirm a novel insulator-metal transition with the change of dimensionality in these superlattices, and our first systematic in situ photoemission spectroscopy study indicates that the increasing strength of effective correlations induced by reducing dimensionality would be the dominating origin of this transition.

  18. Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Kurtz, Steven R.; Klem, J. F.; Allerman, A. A.; Sieg, R. M.; Seager, C. H.; Jones, E. D.

    2002-02-01

    To gain insight into the nitrogen-related defects of InGaAsN, nitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (1.1 eV band gap) grown by molecular beam epitaxy (MBE). Annealing promotes the formation of In-N bonding, and lateral carrier transport is limited by large scale (≫mean free path) material inhomogeneities. Comparing solar cell quantum efficiencies with our earlier results for devices grown by metalorganic chemical vapor deposition (MOCVD), we find significant electron diffusion in the MBE material (reversed from the hole diffusion in MOCVD material), and minority carrier diffusion in InGaAsN cannot be explained by a "universal," nitrogen-related defect.

  19. Pulsed rotating supersonic source for merged molecular beams

    NASA Astrophysics Data System (ADS)

    Sheffield, L.; Hickey, M. S.; Krasovitskiy, V.; Rathnayaka, K. D. D.; Lyuksyutov, I. F.; Herschbach, D. R.

    2012-06-01

    We describe a pulsed rotating supersonic beam source, evolved from an ancestral device [M. Gupta and D. Herschbach, J. Phys. Chem. A 105, 1626 (2001)]. The beam emerges from a nozzle near the tip of a hollow rotor which can be spun at high-speed to shift the molecular velocity distribution downward or upward over a wide range. Here we consider mostly the slowing mode. Introducing a pulsed gas inlet system, cryocooling, and a shutter gate eliminated the main handicap of the original device in which continuous gas flow imposed high background pressure. The new version provides intense pulses, of duration 0.1-0.6 ms (depending on rotor speed) and containing ˜1012 molecules at lab speeds as low as 35 m/s and ˜1015 molecules at 400 m/s. Beams of any molecule available as a gas can be slowed (or speeded); e.g., we have produced slow and fast beams of rare gases, O2, Cl2, NO2, NH3, and SF6. For collision experiments, the ability to scan the beam speed by merely adjusting the rotor is especially advantageous when using two merged beams. By closely matching the beam speeds, very low relative collision energies can be attained without making either beam very slow.

  20. Pulsed rotating supersonic source for merged molecular beams

    NASA Astrophysics Data System (ADS)

    Sheffield, Les; Hickey, Mark; Krasovitskiy, Vitaliy; Rathnayaka, Daya; Lyuksyutov, Igor; Herschbach, Dudley

    2012-10-01

    We continue the characterization of a pulsed rotating supersonic beam source. The original device was described by M. Gupta and D. Herschbach, J. Phys. Chem. A 105, 1626 (2001). The beam emerges from a nozzle near the tip of a hollow rotor which can be spun at high-speed to shift the molecular velocity distribution downward or upward over a wide range. Here we consider mostly the slowing mode. Introducing a pulsed gas inlet system, and a shutter gate eliminate the main handicap of the original device in which continuous gas flow imposed high background pressure. The new version provides intense pulses, of duration 0.1--0.6 ms (depending on rotor speed) and containing ˜10^12 molecules at lab speeds as low as 35 m/s and ˜10^15 molecules at 400 m/s. Beams of any molecule available as a gas can be slowed (or speeded); e.g., we have produced slow and fast beams of rare gases, O2, NO2, NH3, and SF6. For collision experiments, the ability to scan the beam speed by merely adjusting the rotor is especially advantageous when using two merged beams. By closely matching the beam speeds, very low relative collision energies can be attained without making either beam very slow.

  1. Energy deposition of heavy ions in the regime of strong beam-plasma correlations.

    PubMed

    Gericke, D O; Schlanges, M

    2003-03-01

    The energy loss of highly charged ions in dense plasmas is investigated. The applied model includes strong beam-plasma correlation via a quantum T-matrix treatment of the cross sections. Dynamic screening effects are modeled by using a Debye-like potential with a velocity dependent screening length that guarantees the known low and high beam velocity limits. It is shown that this phenomenological model is in good agreement with simulation data up to very high beam-plasma coupling. An analysis of the stopping process shows considerably longer ranges and a less localized energy deposition if strong coupling is treated properly.

  2. Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Dangwal Pandey, A., E-mail: arti.pandey@desy.de; Grånäs, E.; Shayduk, R.

    Heteroepitaxial iridium thin films were deposited on (0001) sapphire substrates by means of molecular beam epitaxy, and subsequently, one monolayer of graphene was synthesized by chemical vapor deposition. The influence of the growth parameters on the quality of the Ir films, as well as of graphene, was investigated systematically by means of low energy electron diffraction, x-ray reflectivity, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Our study reveals (111) oriented iridium films with high crystalline quality and extremely low surface roughness, on which the formation of large-area epitaxial graphene is achieved. The presence of defects,more » like dislocations, twins, and 30° rotated domains in the iridium films is also discussed. The coverage of graphene was found to be influenced by the presence of 30° rotated domains in the Ir films. Low iridium deposition rates suppress these rotated domains and an almost complete coverage of graphene was obtained. This synthesis route yields inexpensive, air-stable, and large-area graphene with a well-defined orientation, making it accessible to a wider community of researchers for numerous experiments or applications, including those which use destructive analysis techniques or irreversible processes. Moreover, this approach can be used to tune the structural quality of graphene, allowing a systematic study of the influence of defects in various processes like intercalation below graphene.« less

  3. Highly conductive and pure gold nanostructures grown by electron beam induced deposition

    PubMed Central

    Shawrav, Mostafa M.; Taus, Philipp; Wanzenboeck, Heinz D.; Schinnerl, M.; Stöger-Pollach, M.; Schwarz, S.; Steiger-Thirsfeld, A.; Bertagnolli, Emmerich

    2016-01-01

    This work introduces an additive direct-write nanofabrication technique for producing extremely conductive gold nanostructures from a commercial metalorganic precursor. Gold content of 91 atomic % (at. %) was achieved by using water as an oxidative enhancer during direct-write deposition. A model was developed based on the deposition rate and the chemical composition, and it explains the surface processes that lead to the increases in gold purity and deposition yield. Co-injection of an oxidative enhancer enabled Focused Electron Beam Induced Deposition (FEBID)—a maskless, resistless deposition method for three dimensional (3D) nanostructures—to directly yield pure gold in a single process step, without post-deposition purification. Gold nanowires displayed resistivity down to 8.8 μΩ cm. This is the highest conductivity achieved so far from FEBID and it opens the possibility of applications in nanoelectronics, such as direct-write contacts to nanomaterials. The increased gold deposition yield and the ultralow carbon level will facilitate future applications such as the fabrication of 3D nanostructures in nanoplasmonics and biomolecule immobilization. PMID:27666531

  4. Simulation-Guided 3D Nanomanufacturing via Focused Electron Beam Induced Deposition

    DOE PAGES

    Fowlkes, Jason D.; Winkler, Robert; Lewis, Brett B.; ...

    2016-06-10

    Focused electron beam induced deposition (FEBID) is one of the few techniques that enables direct-write synthesis of free-standing 3D nanostructures. While the fabrication of simple architectures such as vertical or curving nanowires has been achieved by simple trial and error, processing complex 3D structures is not tractable with this approach. This is due, inpart, to the dynamic interplay between electron–solid interactions and the transient spatial distribution of absorbed precursor molecules on the solid surface. Here, we demonstrate the ability to controllably deposit 3D lattice structures at the micro/nanoscale, which have received recent interest owing to superior mechanical and optical properties.more » Moreover, a hybrid Monte Carlo–continuum simulation is briefly overviewed, and subsequently FEBID experiments and simulations are directly compared. Finally, a 3D computer-aided design (CAD) program is introduced, which generates the beam parameters necessary for FEBID by both simulation and experiment. In using this approach, we demonstrate the fabrication of various 3D lattice structures using Pt-, Au-, and W-based precursors.« less

  5. Hybrid inorganic–organic superlattice structures with atomic layer deposition/molecular layer deposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi

    2014-01-15

    A combination of the atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques is successfully employed to fabricate thin films incorporating superlattice structures that consist of single layers of organic molecules between thicker layers of ZnO. Diethyl zinc and water are used as precursors for the deposition of ZnO by ALD, while three different organic precursors are investigated for the MLD part: hydroquinone, 4-aminophenol and 4,4′-oxydianiline. The successful superlattice formation with all the organic precursors is verified through x-ray reflectivity studies. The effects of the interspersed organic layers/superlattice structure on the electrical and thermoelectric properties of ZnO are investigatedmore » through resistivity and Seebeck coefficient measurements at room temperature. The results suggest an increase in carrier concentration for small concentrations of organic layers, while higher concentrations seem to lead to rather large reductions in carrier concentration.« less

  6. Considerations on the Design of a Molecular Frequency Standard Based on the Molecular Beam Electric Resonance Method

    NASA Technical Reports Server (NTRS)

    Hughes, Vernon W.

    1959-01-01

    The use of a rotational state transition as observed by the molecular beam electric resonance method is discussed as a possible frequency standard particularly in the millimeter wavelength range. As a promising example the 100 kMc transition between the J = 0 and J = 1 rotational states of Li 6F19 is considered. The relative insensitivity of the transition frequency to external electric and magnetic fields and the low microwave power requirements appear favorable; the small fraction of the molecular beam that is in a single rotational state is a limiting factor.

  7. Ion beam deposition system for depositing low defect density extreme ultraviolet mask blanks

    NASA Astrophysics Data System (ADS)

    Jindal, V.; Kearney, P.; Sohn, J.; Harris-Jones, J.; John, A.; Godwin, M.; Antohe, A.; Teki, R.; Ma, A.; Goodwin, F.; Weaver, A.; Teora, P.

    2012-03-01

    Extreme ultraviolet lithography (EUVL) is the leading next-generation lithography (NGL) technology to succeed optical lithography at the 22 nm node and beyond. EUVL requires a low defect density reflective mask blank, which is considered to be one of the top two critical technology gaps for commercialization of the technology. At the SEMATECH Mask Blank Development Center (MBDC), research on defect reduction in EUV mask blanks is being pursued using the Veeco Nexus deposition tool. The defect performance of this tool is one of the factors limiting the availability of defect-free EUVL mask blanks. SEMATECH identified the key components in the ion beam deposition system that is currently impeding the reduction of defect density and the yield of EUV mask blanks. SEMATECH's current research is focused on in-house tool components to reduce their contributions to mask blank defects. SEMATECH is also working closely with the supplier to incorporate this learning into a next-generation deposition tool. This paper will describe requirements for the next-generation tool that are essential to realize low defect density EUV mask blanks. The goal of our work is to enable model-based predictions of defect performance and defect improvement for targeted process improvement and component learning to feed into the new deposition tool design. This paper will also highlight the defect reduction resulting from process improvements and the restrictions inherent in the current tool geometry and components that are an impediment to meeting HVM quality EUV mask blanks will be outlined.

  8. Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.

    2007-10-01

    MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2eV, which corresponds to a 3.2eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior.

  9. Fabrication of precision high quality facets on molecular beam epitaxy material

    DOEpatents

    Petersen, Holly E.; Goward, William D.; Dijaili, Sol P.

    2001-01-01

    Fabricating mirrored vertical surfaces on semiconductor layered material grown by molecular beam epitaxy (MBE). Low energy chemically assisted ion beam etching (CAIBE) is employed to prepare mirrored vertical surfaces on MBE-grown III-V materials under unusually low concentrations of oxygen in evacuated etching atmospheres of chlorine and xenon ion beams. UV-stabilized smooth-surfaced photoresist materials contribute to highly vertical, high quality mirrored surfaces during the etching.

  10. Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Nakhaie, S.; Wofford, J. M.; Schumann, T.; Jahn, U.; Ramsteiner, M.; Hanke, M.; Lopes, J. M. J.; Riechert, H.

    2015-05-01

    Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.

  11. Inorganic-Organic Coating via Molecular Layer Deposition Enables Long Life Sodium Metal Anode.

    PubMed

    Zhao, Yang; Goncharova, Lyudmila V; Zhang, Qian; Kaghazchi, Payam; Sun, Qian; Lushington, Andrew; Wang, Biqiong; Li, Ruying; Sun, Xueliang

    2017-09-13

    Metallic Na anode is considered as a promising alternative candidate for Na ion batteries (NIBs) and Na metal batteries (NMBs) due to its high specific capacity, and low potential. However, the unstable solid electrolyte interphase layer caused by serious corrosion and reaction in electrolyte will lead to big challenges, including dendrite growth, low Coulombic efficiency and even safety issues. In this paper, we first demonstrate the inorganic-organic coating via advanced molecular layer deposition (alucone) as a protective layer for metallic Na anode. By protecting Na anode with controllable alucone layer, the dendrites and mossy Na formation have been effectively suppressed and the lifetime has been significantly improved. Moreover, the molecular layer deposition alucone coating shows better performances than the atomic layer deposition Al 2 O 3 coating. The novel design of molecular layer deposition protected Na metal anode may bring in new opportunities to the realization of the next-generation high energy-density NIBs and NMBs.

  12. Magnetron sputtering system for coatings deposition with activation of working gas mixture by low-energy high-current electron beam

    NASA Astrophysics Data System (ADS)

    Gavrilov, N. V.; Kamenetskikh, A. S.; Men'shakov, A. I.; Bureyev, O. A.

    2015-11-01

    For the purposes of efficient decomposition and ionization of the gaseous mixtures in a system for coatings deposition using reactive magnetron sputtering, a low-energy (100-200 eV) high-current electron beam is generated by a grid-stabilized plasma electron source. The electron source utilizes both continuous (up to 20 A) and pulse-periodic mode of discharge with a self-heated hollow cathode (10-100 A; 0.2 ms; 10-1000 Hz). The conditions for initiation and stable burning of the high-current pulse discharge are studied along with the stable generation of a low-energy electron beam within the gas pressure range of 0.01 - 1 Pa. It is shown that the use of the electron beam with controllable parameters results in reduction of the threshold values both for the pressure of gaseous mixture and for the fluxes of molecular gases. Using such a beam also provides a wide range (0.1-10) of the flux density ratios of ions and sputtered atoms over the coating surface, enables an increase in the maximum pulse density of ion current from plasma up to 0.1 A, ensures an excellent adhesion, optimizes the coating structure, and imparts improved properties to the superhard nanocomposite coatings of (Ti,Al)N/a-Si3N4 and TiC/-a-C:H. Mass-spectrometric measurements of the beam-generated plasma composition proved to demonstrate a twofold increase in the average concentration of N+ ions in the Ar-N2 plasma generated by the high-current (100 A) pulsed electron beam, as compared to the dc electron beam.

  13. Vacuum Ultraviolet Radiation Desorption of Molecular Contaminants Deposited on Quartz Crystal Microbalances

    NASA Technical Reports Server (NTRS)

    Albyn, Keith; Burns, Dewitt

    2006-01-01

    Recent quartz crystal microbalance measurements made in the Marshall Space Flight Center, Photo-Deposition Facility, for several materials, recorded a significant loss of deposited contaminants when the deposition surface of the microbalance was illuminated by a deuterium lamp. These measurements differ from observations made by other investigators in which the rate of deposition increased significantly when the deposition surface was illuminated with vacuum ultraviolet radiation. These observations suggest that the accelerated deposition of molecular contaminants on optically sensitive surfaces is dependant upon the contaminant being deposited and must be addressed during the materials selection process by common material screening techniques.

  14. Passivation effect on optical and electrical properties of molecular beam epitaxy-grown HgCdTe/CdTe/Si layers

    NASA Astrophysics Data System (ADS)

    Kiran, Rajni; Mallick, Shubhrangshu; Hahn, Suk-Ryong; Lee, T. S.; Sivananthan, Sivalingam; Ghosh, Siddhartha; Wijewarnasuriya, P. S.

    2006-06-01

    The effects of passivation with two different passivants, ZnS and CdTe, and two different passivation techniques, physical vapor deposition (PVD) and molecular beam epitaxy (MBE), were quantified in terms of the minority carrier lifetime and extracted surface recombination velocity on both MBE-grown medium-wavelength ir (MWIR) and long-wavelength ir HgCdTe samples. A gradual increment of the minority carrier lifetime was reported as the passivation technique was changed from PVD ZnS to PVD CdTe, and finally to MBE CdTe, especially at low temperatures. A corresponding reduction in the extracted surface recombination velocity in the same order was also reported for the first time. Initial data on the 1/ f noise values of as-grown MWIR samples showed a reduction of two orders of noise power after 1200-Å ZnS deposition.

  15. Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Uedono, Akira; Malinverni, Marco; Martin, Denis

    Vacancy-type defects in Mg-doped GaN were probed using a monoenergetic positron beam. GaN films with a thickness of 0.5–0.7 μm were grown on GaN/sapphire templates using ammonia-based molecular beam epitaxy and characterized by measuring Doppler broadening spectra. Although no vacancies were detected in samples with a Mg concentration [Mg] below 7 × 10{sup 19 }cm{sup −3}, vacancy-type defects were introduced starting at above [Mg] = 1 × 10{sup 20 }cm{sup −3}. The major defect species was identified as a complex between Ga vacancy (V{sub Ga}) and multiple nitrogen vacancies (V{sub N}s). The introduction of vacancy complexes was found to correlate with a decreasemore » in the net acceptor concentration, suggesting that the defect introduction is closely related to the carrier compensation. We also investigated Mg-doped GaN layers grown using In as the surfactant. The formation of vacancy complexes was suppressed in the subsurface region (≤80 nm). The observed depth distribution of defects was attributed to the thermal instability of the defects, which resulted in the introduction of vacancy complexes during the deposition process.« less

  16. Focused electron beam induced deposition: A perspective

    PubMed Central

    Porrati, Fabrizio; Schwalb, Christian; Winhold, Marcel; Sachser, Roland; Dukic, Maja; Adams, Jonathan; Fantner, Georg

    2012-01-01

    Summary Background: Focused electron beam induced deposition (FEBID) is a direct-writing technique with nanometer resolution, which has received strongly increasing attention within the last decade. In FEBID a precursor previously adsorbed on a substrate surface is dissociated in the focus of an electron beam. After 20 years of continuous development FEBID has reached a stage at which this technique is now particularly attractive for several areas in both, basic and applied research. The present topical review addresses selected examples that highlight this development in the areas of charge-transport regimes in nanogranular metals close to an insulator-to-metal transition, the use of these materials for strain- and magnetic-field sensing, and the prospect of extending FEBID to multicomponent systems, such as binary alloys and intermetallic compounds with cooperative ground states. Results: After a brief introduction to the technique, recent work concerning FEBID of Pt–Si alloys and (hard-magnetic) Co–Pt intermetallic compounds on the nanometer scale is reviewed. The growth process in the presence of two precursors, whose flux is independently controlled, is analyzed within a continuum model of FEBID that employs rate equations. Predictions are made for the tunability of the composition of the Co–Pt system by simply changing the dwell time of the electron beam during the writing process. The charge-transport regimes of nanogranular metals are reviewed next with a focus on recent theoretical advancements in the field. As a case study the transport properties of Pt–C nanogranular FEBID structures are discussed. It is shown that by means of a post-growth electron-irradiation treatment the electronic intergrain-coupling strength can be continuously tuned over a wide range. This provides unique access to the transport properties of this material close to the insulator-to-metal transition. In the last part of the review, recent developments in mechanical strain

  17. Electron-beam Induced Processes and their Applicability to Mask Repair

    NASA Astrophysics Data System (ADS)

    Boegli, Volker A.; Koops, Hans W. P.; Budach, Michael; Edinger, Klaus; Hoinkis, Ottmar; Weyrauch, Bernd; Becker, Rainer; Schmidt, Rudolf; Kaya, Alexander; Reinhardt, Andreas; Braeuer, Stephan; Honold, Heinz; Bihr, Johannes; Greiser, Jens; Eisenmann, Michael

    2002-12-01

    The applicability of electron-beam induced chemical reactions to mask repair is investigated. To achieve deposition and chemical etching with a focused electron-beam system, it is required to disperse chemicals in a molecular beam to the area of interest with a well-defined amount of molecules and monolayers per second. For repair of opaque defects the precursor gas reacts with the absorber material of the mask and forms a volatile reaction product, which leaves the surface. In this way the surface atoms are removed layer by layer. For clear defect repair, additional material, which is light absorbing in the UV, is deposited onto the defect area. This material is rendered as a nanocrystalline deposit from metal containing precursors. An experimental electron-beam mask repair system is developed and used to perform exploratory work applicable to photo mask, EUV mask, EPL and LEEPL stencil mask repair. The tool is described and specific repair actions are demonstrated. Platinum deposited features with lateral dimensions down to 20 nm demonstrate the high resolution obtainable with electron beam induced processes, while AFM and AIMS measurements indicate, that specifications for mask repair at the 70 nm device node can be met. In addition, examples of etching quartz and TaN are given.

  18. Optimized cell geometry for buffer-gas-cooled molecular-beam sources

    NASA Astrophysics Data System (ADS)

    Singh, Vijay; Samanta, Amit K.; Roth, Nils; Gusa, Daniel; Ossenbrüggen, Tim; Rubinsky, Igor; Horke, Daniel A.; Küpper, Jochen

    2018-03-01

    We have designed, constructed, and commissioned a cryogenic helium buffer-gas source for producing a cryogenically cooled molecular beam and evaluated the effect of different cell geometries on the intensity of the produced molecular beam, using ammonia as a test molecule. Planar and conical entrance and exit geometries are tested. We observe a threefold enhancement in the NH3 signal for a cell with planar entrance and conical-exit geometry, compared to that for a typically used "boxlike" geometry with planar entrance and exit. These observations are rationalized by flow field simulations for the different buffer-gas cell geometries. The full thermalization of molecules with the helium buffer gas is confirmed through rotationally resolved resonance-enhanced multiphoton ionization spectra yielding a rotational temperature of 5 K.

  19. Optical and Scratch Resistant Properties of Diamondlike Carbon Films Deposited with Single and Dual Ion Beams

    NASA Technical Reports Server (NTRS)

    Kussmaul, Michael T.; Bogdanski, Michael S.; Banks, Bruce A.; Mirtich, Michael J.

    1993-01-01

    Amorphous diamond-like carbon (DLC) films were deposited using both single and dual ion beam techniques utilizing filament and hollow cathode ion sources. Continuous DLC films up to 3000 A thick were deposited on fused quartz plates. Ion beam process parameters were varied in an effort to create hard, clear films. Total DLC film absorption over visible wavelengths was obtained using a Perkin-Elmer spectrophotometer. An ellipsometer, with an Ar-He laser (wavelength 6328 A) was used to determine index of refraction for the DLC films. Scratch resistance, frictional, and adherence properties were determined for select films. Applications for these films range from military to the ophthalmic industries.

  20. Optical and scratch resistant properties of diamondlike carbon films deposited with single and dual ion beams

    NASA Technical Reports Server (NTRS)

    Kussmaul, Michael T.; Bogdanski, Michael S.; Banks, Bruce A.; Mirtich, Michael J.

    1993-01-01

    Amorphous diamondlike carbon (DLC) films were deposited using both single and dual ion beam techniques utilizing filament and hollow cathode ion sources. Continuous DLC films up to 3000 A thick were deposited on fused quartz plates. Ion beam process parameters were varied in an effort to create hard, clear films. Total DLC film absorption over visible wavelengths was obtained using a Perkin-Elmer spectrophotometer. An ellipsometer, with an Ar-He laser (wavelength 6328 A) was used to determine index of refraction for the DLC films. Scratch resistance and frictional and adherence properties were determined for select films. Applications for these films range from military to the ophthalmic industries.

  1. Annealing-Based Electrical Tuning of Cobalt-Carbon Deposits Grown by Focused-Electron-Beam-Induced Deposition.

    PubMed

    Puydinger Dos Santos, Marcos V; Velo, Murilo F; Domingos, Renan D; Zhang, Yucheng; Maeder, Xavier; Guerra-Nuñez, Carlos; Best, James P; Béron, Fanny; Pirota, Kleber R; Moshkalev, Stanislav; Diniz, José A; Utke, Ivo

    2016-11-30

    An effective postgrowth electrical tuning, via an oxygen releasing method, to enhance the content of non-noble metals in deposits directly written with gas-assisted focused-electron-beam-induced deposition (FEBID) is presented. It represents a novel and reproducible method for improving the electrical transport properties of Co-C deposits. The metal content and electrical properties of Co-C-O nanodeposits obtained by electron-induced dissociation of volatile Co 2 (CO) 8 precursor adsorbate molecules were reproducibly tuned by applying postgrowth annealing processes at 100 °C, 200 °C, and 300 °C under high-vacuum for 10 min. Advanced thin film EDX analysis showed that during the annealing process predominantly oxygen is released from the Co-C-O deposits, yielding an atomic ratio of Co:C:O = 100:16:1 (85:14:1) with respect to the atomic composition of as-written Co:C:O = 100:21:28 (67:14:19). In-depth Raman analysis suggests that the amorphous carbon contained in the as-written deposit turns into graphite nanocrystals with size of about 22.4 nm with annealing temperature. Remarkably, these microstructural changes allow for tuning of the electrical resistivity of the deposits over 3 orders of magnitude from 26 mΩ cm down to 26 μΩ cm, achieving a residual resistivity of ρ 2K /ρ 300 K = 0.56, close to the value of 0.53 for pure Co films with similar dimensions, making it especially interesting and advantageous over the numerous works already published for applications such as advanced scanning-probe systems, magnetic memory, storage, and ferroelectric tunnel junction memristors, as the graphitic matrix protects the cobalt from being oxidized under an ambient atmosphere.

  2. Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

    PubMed Central

    Baiutti, Federico; Christiani, Georg

    2014-01-01

    Summary In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2− xSrxNiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control. PMID:24995148

  3. Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Suzuki, Hidetoshi, E-mail: hsuzuki@cc.miyazaki-u.ac.jp; Nakata, Yuka; Takahasi, Masamitu

    2016-03-15

    The formation and evolution of rotational twin (TW) domains introduced by a stacking fault during molecular-beam epitaxial growth of GaAs on Si (111) substrates were studied by in situ x-ray diffraction. To modify the volume ratio of TW to total GaAs domains, GaAs was deposited under high and low group V/group III (V/III) flux ratios. For low V/III, there was less nucleation of TW than normal growth (NG) domains, although the NG and TW growth rates were similar. For high V/III, the NG and TW growth rates varied until a few GaAs monolayers were deposited; the mean TW domain sizemore » was smaller for all film thicknesses.« less

  4. Deposition of PTFE thin films by ion beam sputtering and a study of the ion bombardment effect

    NASA Astrophysics Data System (ADS)

    He, J. L.; Li, W. Z.; Wang, L. D.; Wang, J.; Li, H. D.

    1998-02-01

    Ion beam sputtering technique was employed to prepare thin films of Polytetrafluroethylene (PTFE). Simultaneous ion beam bombardment during film growth was also conducted in order to study the bombardment effects. Infrared absorption (IR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis was used to evaluate the material's integrity. It was found that PTFE thin films could be grown at room temperature by direct sputtering of a PTFE target. The film's composition and structure were shown to be dependent on the sputtering energy. Films deposited by single sputtering at higher energy (˜1500 eV) were structurally quite similar to the original PTFE material. Simultaneous ion beam bombarding during film growth caused defluorination and structural changes. Mechanism for sputtering deposition of such a polymeric material is also discussed.

  5. Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chou, C. Y.; Torfi, A.; Pei, C.

    2016-05-09

    In this work, the effects of substrate orientation on InSb quantum structure growth by molecular beam epitaxy (MBE) are presented. Motivated by the observation that (411) evolves naturally as a stable facet during MBE crystal growth, comparison studies have been carried out to investigate the effects of the crystal orientation of the underlying GaSb substrate on the growth of InSb by MBE. By depositing InSb on a number of different substrate orientations, namely: (100), (311), (411), and (511), a higher nanostructure density was observed on the (411) surface compared with the other orientations. This result suggests that the (411) orientationmore » presents a superior surface in MBE growth to develop a super-flat GaSb buffer surface, naturally favorable for nanostructure growth.« less

  6. Investigation of aluminium ohmic contacts to n-type GaN grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Kribes, Y.; Harrison, I.; Tuck, B.; Kim, K. S.; Cheng, T. S.; Foxon, C. T.

    1997-11-01

    Using epi-layers of different doping concentrations, we have investigated aluminium contacts on n-type gallium nitride grown by plasma source molecular beam epitaxy. To achieve repeatable and reliable results it was found that the semiconductor needed to be etched in aqua-regia before the deposition of the contact metallization. Scanning electron micrographs of the semiconductor surface show a deterioration of the semiconductor surface on etching. The specific contact resistivity of the etched samples were, however, superior. Annealing the contacts at 0268-1242/12/11/030/img9 produced contacts with the lowest specific contact resistance of 0268-1242/12/11/030/img10. The long-term aging of these contacts was also investigated. The contacts and the sheet resistance were both found to deteriorate over a three-month period.

  7. GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tseng, H. Y.; Yang, W. C.; Lee, P. Y.

    2016-08-22

    GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of themore » observed device performance enhancements.« less

  8. Ion beam deposition of amorphous carbon films with diamond like properties

    NASA Technical Reports Server (NTRS)

    Angus, John C.; Mirtich, Michael J.; Wintucky, Edwin G.

    1982-01-01

    Carbon films were deposited on silicon, quartz, and potassium bromide substrates from an ion beam. Growth rates were approximately 0.3 micron/hour. The films were featureless and amorphous and contained only carbon and hydrogen in significant amounts. The density and carbon/hydrogen ratio indicate the film is a hydrogen deficient polymer. One possible structure, consistent with the data, is a random network of methylene linkages and tetrahedrally coordinated carbon atoms.

  9. Fundamental tribological properties of ion-beam-deposited boron nitride films

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1989-01-01

    The adhesion, friction, and micromechanical properties of ion-beam-deposited boron nitride (BN) films are reviewed. The BN films are examined in contact with BN metals and other harder materials. For simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. First, the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces are discussed. The effects of surface films, hardness of metals, and temperature on tribological response with respect to adhesion and friction are considered. The second part deals with the abrasion of the BN films. Elastic, plastic, and fracture behavior of the BN films in solid-state contact are discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of BN films deposited on substrates is also addressed.

  10. Fundamental tribological properties of ion-beam-deposited boron nitride films

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.

    1990-01-01

    The adhesion, friction, and micromechanical properties of ion-beam-deposited boron nitride (BN) films are reviewed. The BN films are examined in contact with BN metals and other harder materials. For simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. First, the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces are discussed. The effects of surface films, hardness of metals, and temperature on tribological response with respect to adhesion and friction are considered. The second part deals with the abrasion of the BN films. Elastic, plastic, and fracture behavior of the BN films in solid-state contact are discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of BN films deposited on substrates is also addressed.

  11. Three-dimensional imaging of the ultracold plasma formed in a supersonic molecular beam

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Schulz-Weiling, Markus; Grant, Edward

    Double-resonant excitation of nitric oxide in a seeded supersonic molecular beam forms a state-selected Rydberg gas that evolves to form an ultracold plasma. This plasma travels with the propagation of the molecular beam in z over a variable distance as great as 600 mm to strike an imaging detector, which records the charge distribution in the dimensions, x and y. The ω{sub 1} + ω{sub 2} laser crossed molecular beam excitation geometry convolutes the axial Gaussian distribution of NO in the molecular beam with the Gaussian intensity distribution of the perpendicularly aligned laser beam to create an ellipsoidal volume of Rydbergmore » gas. Detected images describe the evolution of this initial density as a function of selected Rydberg gas initial principal quantum number, n{sub 0}, ω{sub 1} laser pulse energy (linearly related to Rydberg gas density, ρ{sub 0}) and flight time. Low-density Rydberg gases of lower principal quantum number produce uniformly expanding, ellipsoidal charge-density distributions. Increase either of n{sub 0} or ρ{sub 0} breaks the ellipsoidal symmetry of plasma expansion. The volume bifurcates to form repelling plasma volumes. The velocity of separation depends on n{sub 0} and ρ{sub 0} in a way that scales uniformly with ρ{sub e}, the density of electrons formed in the core of the Rydberg gas by prompt Penning ionization. Conditions under which this electron gas drives expansion in the long axis dimension of the ellipsoid favours the formation of counter-propagating shock waves.« less

  12. Effect of Ag Surfactant on Cu/Co Multilayers Deposited by RF-Ion Beam Sputtering

    NASA Astrophysics Data System (ADS)

    Amir, S. M.; Gupta, M.; Gupta, A.; Wildes, A.

    2011-07-01

    In this work, the effect of Ag surfactant in RF-ion beam sputtered Cu/Co multilayers was studied. It was found that when a sub-monolayer of Ag (termed as surfactant) is deposited prior to the deposition of Cu/Co multilayers, the asymmetry in the Cu/Co or Co/Cu interfaces becomes small. Low surface free energy of Ag helps Ag atoms to float when a Cu or Co layer is getting deposited. This balances the difference between the surface free energy of Cu and Co making the interfaces in the multilayers smoother as compared to the case when no Ag surfactant was used.

  13. A new high intensity and short-pulse molecular beam valve

    NASA Astrophysics Data System (ADS)

    Yan, B.; Claus, P. F. H.; van Oorschot, B. G. M.; Gerritsen, L.; Eppink, A. T. J. B.; van de Meerakker, S. Y. T.; Parker, D. H.

    2013-02-01

    In this paper, we report on the design and performance of a new home-built pulsed gas valve, which we refer to as the Nijmegen Pulsed Valve (NPV). The main output characteristics include a short pulse width (as short as 20 μs) combined with operating rates up to 30 Hz. The operation principle of the NPV is based on the Lorentz force created by a pulsed current passing through an aluminum strip located within a magnetic field, which opens the nozzle periodically. The amplitude of displacement of the opening mechanism is sufficient to allow the use of nozzles with up to 1.0 mm diameter. To investigate the performance of the valve, several characterizations were performed with different experimental methods. First, a fast ionization gauge was used to measure the beam intensity of the free jet emanating from the NPV. We compare free jets from the NPV with those from several other pulsed valves in current use in our laboratory. Results showed that a high intensity and short pulse-length beam could be generated by the new valve. Second, the NPV was tested in combination with a skimmer, where resonance enhanced multiphoton ionization combined with velocity map imaging was used to show that the NPV was able to produce a pulsed molecular beam with short pulse duration (˜20 μs using 0.1% NO/He at 6 bars) and low rotational temperature (˜1 K using 0.5% NO/Ar at 6 bars). Third, a novel two-point pump-probe method was employed which we label double delay scan. This method allows a full kinematic characterization of the molecular beam, including accurate speed ratios at different temporal positions. It was found that the speed ratio was maximum (S = 50 using 0.1% NO/He at 3 bars) at the peak position of the molecular beam and decreased when it was on the leading or falling edge.

  14. Computer simulation studies of the growth of strained layers by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Faux, D. A.; Gaynor, G.; Carson, C. L.; Hall, C. K.; Bernholc, J.

    1990-08-01

    Two new types of discrete-space Monte Carlo computer simulation are presented for the modeling of the early stages of strained-layer growth by molecular-beam epitaxy. The simulations are more economical on computer resources than continuous-space Monte Carlo or molecular dynamics. Each model is applied to the study of growth onto a substrate in two dimensions with use of Lennard-Jones interatomic potentials. Up to seven layers are deposited for a variety of lattice mismatches, temperatures, and growth rates. Both simulations give similar results. At small lattice mismatches (<~4%) the growth is in registry with the substrate, while at high mismatches (>~6%) the growth is incommensurate with the substrate. At intermediate mismatches, a transition from registered to incommensurate growth is observed which commences at the top of the crystal and propagates down to the first layer. Faster growth rates are seen to inhibit this transition. The growth mode is van der Merwe (layer-by-layer) at 2% lattice mismatch, but at larger mismatches Volmer-Weber (island) growth is preferred. The Monte Carlo simulations are assessed in the light of these results and the ease at which they can be extended to three dimensions and to more sophisticated potentials is discussed.

  15. Formation mechanisms of boron oxide films fabricated by large-area electron beam-induced deposition of trimethyl borate [Formation Mechanisms of Boron Oxide Fillms Fabricated by Large Area Electron Beam-Induced Deposition of Trimethyl Borate

    DOE PAGES

    Martin, Aiden A.; Depond, Philip J.

    2018-04-24

    Boron-containing materials are increasingly drawing interest for the use in electronics, optics, laser targets, neutron absorbers, and high-temperature and chemically resistant ceramics. In this article, the first investigation into the deposition of boron-based material via electron beam-induced deposition (EBID) is reported. Thin films were deposited using a novel, large-area EBID system that is shown to deposit material at rates comparable to conventional techniques such as laser-induced chemical vapor deposition. The deposition rate and stoichiometry of boron oxide fabricated by EBID using trimethyl borate (TMB) as precursor is found to be critically dependent on the substrate temperature. By comparing the depositionmore » mechanisms of TMB to the conventional, alkoxide-based precursor tetraethyl orthosilicate it is revealed that ligand chemistry does not precisely predict the pathways leading to deposition of material via EBID. Lastly, the results demonstrate the first boron-containing material deposited by the EBID process and the potential for EBID as a scalable fabrication technique that could have a transformative effect on the athermal deposition of materials.« less

  16. Formation mechanisms of boron oxide films fabricated by large-area electron beam-induced deposition of trimethyl borate [Formation Mechanisms of Boron Oxide Fillms Fabricated by Large Area Electron Beam-Induced Deposition of Trimethyl Borate

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Martin, Aiden A.; Depond, Philip J.

    Boron-containing materials are increasingly drawing interest for the use in electronics, optics, laser targets, neutron absorbers, and high-temperature and chemically resistant ceramics. In this article, the first investigation into the deposition of boron-based material via electron beam-induced deposition (EBID) is reported. Thin films were deposited using a novel, large-area EBID system that is shown to deposit material at rates comparable to conventional techniques such as laser-induced chemical vapor deposition. The deposition rate and stoichiometry of boron oxide fabricated by EBID using trimethyl borate (TMB) as precursor is found to be critically dependent on the substrate temperature. By comparing the depositionmore » mechanisms of TMB to the conventional, alkoxide-based precursor tetraethyl orthosilicate it is revealed that ligand chemistry does not precisely predict the pathways leading to deposition of material via EBID. Lastly, the results demonstrate the first boron-containing material deposited by the EBID process and the potential for EBID as a scalable fabrication technique that could have a transformative effect on the athermal deposition of materials.« less

  17. Method for measuring and controlling beam current in ion beam processing

    DOEpatents

    Kearney, Patrick A.; Burkhart, Scott C.

    2003-04-29

    A method for producing film thickness control of ion beam sputter deposition films. Great improvements in film thickness control is accomplished by keeping the total current supplied to both the beam and suppressor grids of a radio frequency (RF) in beam source constant, rather than just the current supplied to the beam grid. By controlling both currents, using this method, deposition rates are more stable, and this allows the deposition of layers with extremely well controlled thicknesses to about 0.1%. The method is carried out by calculating deposition rates based on the total of the suppressor and beam currents and maintaining the total current constant by adjusting RF power which gives more consistent values.

  18. Molecular dynamics and dynamic Monte-Carlo simulation of irradiation damage with focused ion beams

    NASA Astrophysics Data System (ADS)

    Ohya, Kaoru

    2017-03-01

    The focused ion beam (FIB) has become an important tool for micro- and nanostructuring of samples such as milling, deposition and imaging. However, this leads to damage of the surface on the nanometer scale from implanted projectile ions and recoiled material atoms. It is therefore important to investigate each kind of damage quantitatively. We present a dynamic Monte-Carlo (MC) simulation code to simulate the morphological and compositional changes of a multilayered sample under ion irradiation and a molecular dynamics (MD) simulation code to simulate dose-dependent changes in the backscattering-ion (BSI)/secondary-electron (SE) yields of a crystalline sample. Recent progress in the codes for research to simulate the surface morphology and Mo/Si layers intermixing in an EUV lithography mask irradiated with FIBs, and the crystalline orientation effect on BSI and SE yields relating to the channeling contrast in scanning ion microscopes, is also presented.

  19. Perspective: Oxide molecular-beam epitaxy rocks!

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Schlom, Darrell G., E-mail: schlom@cornell.edu

    2015-06-01

    Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  20. Nanostructured silicon membranes for control of molecular transport.

    PubMed

    Srijanto, Bernadeta R; Retterer, Scott T; Fowlkes, Jason D; Doktycz, Mitchel J

    2010-11-01

    A membrane that allows selective transport of molecular species requires precise engineering on the nanoscale. Membrane permeability can be tuned by controlling the physical structure and surface chemistry of the pores. Here, a combination of electron beam and optical lithography, along with cryogenic deep reactive ion etching, has been used to fabricate silicon membranes that are physically robust, have uniform pore sizes, and are directly integrated into a microfluidic network. Additional reductions in pore size were achieved using plasma enhanced chemical vapor deposition and atomic layer deposition of silicon dioxide to coat membrane surfaces. Cross sectioning of the membranes using focused ion beam milling was used to determine the physical shape of the membrane pores before and after coating. Functional characterization of the membranes was performed by using quantitative fluorescence microscopy to document the transport of molecular species across the membrane.

  1. High Growth Rate Metal-Organic Molecular Beam Epitaxy for the Fabrication of GaAs Space Solar Cells

    NASA Technical Reports Server (NTRS)

    Freundlich, A.; Newman, F.; Monier, C.; Street, S.; Dargan, P.; Levy, M.

    2005-01-01

    In this work it is shown that high quality GaAs photovoltaic devices can be produced by Molecular Beam Epitaxy (MBE) with growth rates comparable to metal-organic chemical vapor deposition (MOCVD) through the subsitution of group III solid sources by metal-organic compounds. The influence the III/V flux-ratio and growth temperatures in maintaining a two dimensional layer by layer growth mode and achieving high growth rates with low residual background impurities is investigated. Finally subsequent to the study of the optimization of n- and p doping of such high growth rate epilayers, results from a preliminary attempt in the fabrication of GaAs photovoltaic devices such as tunnel diodes and solar cells using the proposed high growth rate approach are reported.

  2. Soft X-ray multilayers produced by sputtering and molecular beam epitaxy (MBE) - Substrate and interfacial roughness

    NASA Astrophysics Data System (ADS)

    Kearney, Patrick A.; Slaughter, J. M.; Powers, K. D.; Falco, Charles M.

    1988-01-01

    Roughness measurements were made on uncoated silicon wafers and float glass using a WYKO TOPO-3D phase shifting interferometry, and the results are reported. The wafers are found to be slightly smoother than the flat glass. The effects of different cleaning methods and of the deposition of silicon 'buffer layers' on substrate roughness are examined. An acid cleaning method is described which gives more consistent results than detergent cleaning. Healing of the roughness due to sputtered silicon buffer layers was not observed on the length scale probed by the WYKO. Sputtered multilayers are characterized using both the WYKO interferometer and low-angle X-ray diffraction in order to yield information about the roughness of the top surface and of the multilayer interfaces. Preliminary results on film growth using molecular beam epitaxy are also presented.

  3. Preventing kinetic roughening in physical vapor-phase-deposited films.

    PubMed

    Vasco, E; Polop, C; Sacedón, J L

    2008-01-11

    The growth kinetics of the mostly used physical vapor-phase deposition techniques -molecular beam epitaxy, sputtering, flash evaporation, and pulsed laser deposition-is investigated by rate equations with the aim of testing their suitability for the preparation of ultraflat ultrathin films. The techniques are studied in regard to the roughness and morphology during early stages of growth. We demonstrate that pulsed laser deposition is the best technique for preparing the flattest films due to two key features [use of (i) a supersaturated pulsed flux of (ii) hyperthermal species] that promote a kinetically limited Ostwald ripening mechanism.

  4. Molecular weight dependent structure and charge transport in MAPLE-deposited poly(3-hexylthiophene) thin films

    DOE PAGES

    Dong, Ban Xuan; Smith, Mitchell; Strzalka, Joseph; ...

    2018-02-06

    In this work, poly(3-hexylthiophene) (P3HT) films prepared using the matrix-assisted pulsed laser evaporation (MAPLE) technique are shown to possess morphological structures that are dependent on molecular weight (MW). Specifically, the structures of low MW samples of MAPLE-deposited film are composed of crystallites/aggregates embedded within highly disordered environments, whereas those of high MW samples are composed of aggregated domains connected by long polymer chains. Additionally, the crystallite size along the side-chain (100) direction decreases, whereas the conjugation length increases with increasing molecular weight. This is qualitatively similar to the structure of spin-cast films, though the MAPLE-deposited films are more disordered. In-planemore » carrier mobilities in the MAPLE-deposited samples increase with MW, consistent with the notion that longer chains bridge adjacent aggregated domains thereby facilitating more effective charge transport. The carrier mobilities in the MAPLE-deposited simples are consistently lower than those in the solvent-cast samples for all molecular weights, consistent with the shorter conjugation length in samples prepared by this deposition technique.« less

  5. Molecular weight dependent structure and charge transport in MAPLE-deposited poly(3-hexylthiophene) thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Dong, Ban Xuan; Smith, Mitchell; Strzalka, Joseph

    In this work, poly(3-hexylthiophene) (P3HT) films prepared using the matrix-assisted pulsed laser evaporation (MAPLE) technique are shown to possess morphological structures that are dependent on molecular weight (MW). Specifically, the structures of low MW samples of MAPLE-deposited film are composed of crystallites/aggregates embedded within highly disordered environments, whereas those of high MW samples are composed of aggregated domains connected by long polymer chains. Additionally, the crystallite size along the side-chain (100) direction decreases, whereas the conjugation length increases with increasing molecular weight. This is qualitatively similar to the structure of spin-cast films, though the MAPLE-deposited films are more disordered. In-planemore » carrier mobilities in the MAPLE-deposited samples increase with MW, consistent with the notion that longer chains bridge adjacent aggregated domains thereby facilitating more effective charge transport. The carrier mobilities in the MAPLE-deposited simples are consistently lower than those in the solvent-cast samples for all molecular weights, consistent with the shorter conjugation length in samples prepared by this deposition technique.« less

  6. Texture-Induced Anisotropy in an Inconel 718 Alloy Deposited Using Electron Beam Freeform Fabrication

    NASA Technical Reports Server (NTRS)

    Tayon, W.; Shenoy, R.; Bird, R.; Hafley, R.; Redding, M.

    2014-01-01

    A test block of Inconel (IN) 718 was fabricated using electron beam freeform fabrication (EBF(sup 3)) to examine how the EBF(sup 3) deposition process affects the microstructure, crystallographic texture, and mechanical properties of IN 718. Tests revealed significant anisotropy in the elastic modulus for the as-deposited IN 718. Subsequent tests were conducted on specimens subjected to a heat treatment designed to decrease the level of anisotropy. Electron backscatter diffraction (EBSD) was used to characterize crystallographic texture in the as-deposited and heat treated conditions. The anisotropy in the as-deposited condition was strongly affected by texture as evidenced by its dependence on orientation relative to the deposition direction. Heat treatment resulted in a significant improvement in modulus of the EBF(sup 3) product to a level nearly equivalent to that for wrought IN 718 with reduced anisotropy; reduction in texture through recrystallization; and production of a more homogeneous microstructure.

  7. High Resolution Spectroscopy of 1,2-Difluoroethane in a Molecular Beam: A Case Study of Vibrational Mode-Coupling

    DTIC Science & Technology

    1992-05-29

    Spectroscopy of 1,2- Difluoroethane in a Molecular Beam: A Case Study of Vibrational Mode-Coupling by Steven W. Mork, C. Cameron Miller, and Laura A...and sale; its distribution is unlimited. 92-14657 l9lll l l l , II a HIGH RESOLUTION SPECTROSCOPY OF 1,2- DIFLUOROETHANE IN A MOLECULAR BEAM: A CASE...14853-1301 Abstract The high resolution infrared spectrum of 1,2- difluoroethane (DFE) in a molecular beam has been obtained over the 2978-2996 cm-1

  8. Growth of strontium ruthenate films by hybrid molecular beam epitaxy

    DOE PAGES

    Marshall, Patrick B.; Kim, Honggyu; Ahadi, Kaveh; ...

    2017-09-01

    We report on the growth of epitaxial Sr 2RuO 4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO 4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered in traditional molecular beam epitaxy that uses elemental metal sources. Phase-pure, epitaxial thin films of Sr 2RuO 4 are obtained. At high substrate temperatures, growth proceeds in a layer-by-layer mode with intensity oscillations observed in reflection high-energy electron diffraction. Films are of high structural quality, as documented by x-ray diffraction, atomic force microscopy, and transmission electronmore » microscopy. In conclusion, the method should be suitable for the growth of other complex oxides containing ruthenium, opening up opportunities to investigate thin films that host rich exotic ground states.« less

  9. Development of textured magnesium oxide templates and bicrystals using ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Vallejo, Ronald N.

    Recently, there has been an increased research effort in the deposition of near-single-crystal thin films on substrates that do not provide a template for epitaxial crystalline film growth. Ion beam assisted deposition (IBAD) has been demonstrated as one of the most promising methods to artificially control the texture in thin films. Biaxially textured MgO templates of 10 nm thickness were successfully fabricated on glass and silicon substrates without any buffer layers using IBAD. This work has shed insights on several issues. First, surface morphology ˜ 1 nm or better is only a necessary condition for textured IBAD-MgO, but not a sufficient condition. Additional surface preparation must be provided for nucleation and subsequent formation of the textured IBAD-MgO templates. Second, the role of buffer layer on IBAD-MgO texturing. It was found that the ion beam pre-exposure of the substrates prior to IBAD processing provided a sufficient condition for the nucleation and subsequent texture formation of the IBAD grown films. The ion pre-exposure replaced the need for buffer layers in silicon and glass substrates. Finally, by pre-exposing the substrates to Ar + ions, it was found that the ion beam modified the surface and improved the surface roughness of the glass substrates. Textured MgO epi templates were demonstrated for the first time on polymer based substrates (polyimide). This is a crucial step in the realization of epitaxial suspended devices. To achieve an epitaxial film on a sacrificial layer, an epitaxial template film must first be grown prior to subsequent film growth. The role of ion pre-exposure and buffer layer on texture formation was investigated in this part of the work. This thesis also presents groundbreaking results on the fabrication of bicrystal MgO films and bicrystal networks using ion beam assisted deposition. Highly oriented bicrystals, with a common (100) out-of-plane orientation and (110) in-plane orientations having a tilt angle of 45

  10. Molecular Dynamics Simulation of the Three-Dimensional Ordered State in Laser-Cooled Heavy-Ion Beams

    NASA Astrophysics Data System (ADS)

    Yuri, Yosuke

    A molecular dynamics simulation is performed to study the formation of three-dimensional ordered beams by laser cooling in a cooler storage ring. Ultralow-temperature heavy-ion beams are generated by transverse cooling with displaced Gaussian lasers and resonant coupling. A three-dimensional ordered state of the ion beam is attained at a high line density. The ordered beam exhibits several unique characteristics different from those of an ideal crystalline beam.

  11. Report on the workshop on Ion Implantation and Ion Beam Assisted Deposition

    NASA Astrophysics Data System (ADS)

    Dearnaley, G.

    1992-03-01

    This workshop was organized by the Corpus Christi Army Depot (CCAD), the major helicopter repair base within AVSCOM. Previous meetings had revealed a strong interest throughout DoD in ion beam technology as a means of extending the service life of military systems by reducing wear, corrosion, fatigue, etc. The workshop opened with an account by Dr. Bruce Sartwell of the successful application of ion implantation to bearings and gears at NRL, and the checkered history of the MANTECH Project at Spire Corporation. Dr. James Hirvonen (AMTL) continued with a summary of successful applications to reduce wear in biomedical components, and he also described the processes of ion beam-assisted deposition (IBAD) for a variety of protective coatings, including diamond-like carbon (DLC).

  12. Effects of high source flow and high pumping speed on gas source molecular beam epitaxy / chemical beam epitaxy

    NASA Astrophysics Data System (ADS)

    McCollum, M. J.; Jackson, S. L.; Szafranek, I.; Stillman, G. E.

    1990-10-01

    We report the growth of GaAs by molecular beam epitaxy (MBE), gas source molecular beam epitaxy (GSMBE), and chemical beam epitaxy (CBE) in an epitaxial III-V reactor which features high pumping speed. The system is comprised of a modified Perkin-Elmer 430P molecular beam epitaxy system and a custom gas source panel from Emcore. The growth chamber is pumped with a 7000 1/s (He) diffusion pump (Varian VHS-10 with Monsanto Santovac 5 oil). The gas source panel includes pressure based flow controllers (MKS 1150) allowing triethylaluminum (TEA), triethylgallium (TEG), and trimethylindium (TMI) to be supplied without the use of hydrogen. All source lines, including arsine and phosphine, are maintained below atmospheric pressure. The high pumping speed allows total system flow rates as high as 100 SCCM and V/III ratios as high as 100. The purity of GaAs grown by MBE in this system increases with pumping speed. GaAs layers grown by GSMBE with arsine flows of 10 and 20 SCCM have electron concentrations of 1 × 10 15 cm -3 (μ 77=48,000 cm 2/V·) and 2 × 10 14 cm -3 (μ 77=78,000 cm 2/V·s) respectively. El ectron concentration varies with hydride injector temperature such that the minimum in electron concentration occurs for less than complete cracking. The effect of V/III ratio and the use of a metal eutectic bubbler on residual carrier concentration in GaAs grown by CBE is presented. Intentional Si and Be doping of CBE grown GaAs is demonstrated at a high growth rate of 5.4 μm/h.

  13. Low-dose patterning of platinum nanoclusters on carbon nanotubes by focused-electron-beam-induced deposition as studied by TEM

    PubMed Central

    Bittencourt, Carla; Bals, Sara; Van Tendeloo, Gustaaf

    2013-01-01

    Summary Focused-electron-beam-induced deposition (FEBID) is used as a direct-write approach to decorate ultrasmall Pt nanoclusters on carbon nanotubes at selected sites in a straightforward maskless manner. The as-deposited nanostructures are studied by transmission electron microscopy (TEM) in 2D and 3D, demonstrating that the Pt nanoclusters are well-dispersed, covering the selected areas of the CNT surface completely. The ability of FEBID to graft nanoclusters on multiple sides, through an electron-transparent target within one step, is unique as a physical deposition method. Using high-resolution TEM we have shown that the CNT structure can be well preserved thanks to the low dose used in FEBID. By tuning the electron-beam parameters, the density and distribution of the nanoclusters can be controlled. The purity of as-deposited nanoclusters can be improved by low-energy electron irradiation at room temperature. PMID:23399584

  14. Twenty years of molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Cho, A. Y.

    1995-05-01

    The term "molecular beam epitaxy" (MBE) was first used in one of our crystal growth papers in 1970, after having conducted extensive surface physics studies in the late 1960's of the interaction of atomic and molecular beams with solid surfaces. The unique feature of MBE is the ability to prepare single crystal layers with atomic dimensional precision. MBE sets the standard for epitaxial growth and has made possible semiconductor structures that could not be fabricated with either naturally existing materials or by other crystal growth techniques. MBE led the crystal growth technologies when it prepared the first semiconductor quantum well and superlattice structures that gave unexpected and exciting electrical and optical properties. For example, the discovery of the fractional quantized Hall effect. It brought experimental quantum physics to the classroom, and practically all major universities throughout the world are now equipped with MBE systems. The fundamental principles demonstrated by the MBE growth of III-V compound semiconductors have also been applied to the growth of group IV, II-VI, metal, and insulating materials. For manufacturing, the most important criteria are uniformity, precise control of the device structure, and reproducibility. MBE has produced more lasers (3 to 5 million per month for compact disc application) than any other crystal growth technique in the world. New directions for MBE are to incorporate in-situ, real-time monitoring capabilities so that complex structures can be precisely "engineered". In the future, as environmental concerns increase, the use of toxic arsine and phosphine may be limited. Successful use of valved cracker cells for solid arsenic and phosphorus has already produced InP based injection lasers.

  15. Photodissociation Dynamics in a Pulsed Molecular Beam.

    DTIC Science & Technology

    1982-09-16

    Howard University on May 12-14, 1982. To be. published in the proceedings oif’the meeting, 1983. IS.&E WON"S (COU"IaU. #-" owm of* ""Wu Md 5dmff~’ Ar...Pulsed Molecular Beam Richang Lu, J. B. Halpern and Wf. M4. Jackson Department of Chemistry Howard University Washington, D. C. 20059 𔃾k *a. .- The...Valrafen Department of Chemistry Department of Chemistry University of Southern Howard University California Washington, D.C.. 20059 Los "agles

  16. The Deposition of Multicomponent Films for Electrooptic Applications via a Computer Controlled Dual Ion Beam Sputtering System

    DTIC Science & Technology

    1991-12-31

    AD-A252 218 The Deposition of Multicomponent Films for Electrooptic Applications via a Computer Controlled Dual Ion Beam Sputtering System ONR...6 3 2. Deposition of Electrooptic Thin Films ................................... 11 3. High Resolution Imaging of Twin and Antiphase...Domain Boundaries in Perovskite KNbO3 Thin Films .......... 30 4. Microstructural Characterization of the Epitaxial3 (111) KNbO3 on (0001) Sapphire

  17. Z-scan studies of the nonlinear optical properties of gold nanoparticles prepared by electron beam deposition.

    PubMed

    Mezher, M H; Nady, A; Penny, R; Chong, W Y; Zakaria, R

    2015-11-20

    This paper details the fabrication process for placing single-layer gold (Au) nanoparticles on a planar substrate, and investigation of the resulting optical properties that can be exploited for nonlinear optics applications. Preparation of Au nanoparticles on the substrate involved electron beam deposition and subsequent thermal dewetting. The obtained thin films of Au had a variation in thicknesses related to the controllable deposition time during the electron beam deposition process. These samples were then subjected to thermal annealing at 600°C to produce a randomly distributed layer of Au nanoparticles. Observation from field-effect scanning electron microscope (FESEM) images indicated the size of Au nanoparticles ranges from ∼13 to ∼48  nm. Details of the optical properties related to peak absorption of localized surface plasmon resonance (LSPR) of the nanoparticle were revealed by use of UV-Vis spectroscopy. The Z-scan technique was used to measure the nonlinear effects on the fabricated Au nanoparticle layers where it strongly relates LSPR and nonlinear optical properties.

  18. SERS analysis of Ag nanostructures produced by ion-beam deposition

    NASA Astrophysics Data System (ADS)

    Atanasov, P. A.; Nedyalkov, N. N.; Nikov, Ru G.; Grüner, Ch; Rauschenbach, B.; Fukata, N.

    2018-03-01

    This study deals with the development of a novel technique for formation of advanced Ag nanostructures (NSs) to be applied to high-resolution analyses based on surface enhanced Raman scattering (SERS). It has direct bearing on human health and food quality, e.g., monitoring small amount or traces of pollutants or undesirable additives. Three types of nanostructured Ag samples were produced using ion-beam deposition at glancing angle (GLAD) on quartz. All fabricated structures were covered with BI-58 pesticide (dimethoate) or Rhodamine 6G (R6G) for testing their potential for use as substrates for (SERS).

  19. Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

    DOE PAGES

    Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; ...

    2016-04-27

    Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

  20. Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke

    Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

  1. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    DOE PAGES

    Lin, Yong; Leung, Benjamin; Li, Qiming; ...

    2015-07-14

    In this study, ammonia-based molecular beam epitaxy (NH 3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH 3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH 3-MBE grown GaN nanowires show moremore » than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.« less

  2. Growth and nanomechanical characterization of nanoscale 3D architectures grown via focused electron beam induced deposition

    DOE PAGES

    Lewis, Brett B.; Mound, Brittnee A.; Srijanto, Bernadeta; ...

    2017-10-12

    Here, nanomechanical measurements of platinum–carbon 3D nanoscale architectures grown via focused electron beam induced deposition (FEBID) were performed using a nanoindentation system in a scanning electron microscope (SEM) for simultaneous in situ imaging.

  3. A magnetically focused molecular beam of ortho-water.

    PubMed

    Kravchuk, T; Reznikov, M; Tichonov, P; Avidor, N; Meir, Y; Bekkerman, A; Alexandrowicz, G

    2011-01-21

    Like dihydrogen, water exists as two spin isomers, ortho and para, with the nuclear magnetic moments of the hydrogen atoms either parallel or antiparallel. The ratio of the two spin isomers and their physical properties play an important role in a wide variety of research fields, ranging from astrophysics to nuclear magnetic resonance (NMR). Unlike ortho and para H(2), however, the two water isomers remain challenging to separate, and as a consequence, very little is currently known about their different physical properties. Here, we report the formation of a magnetically focused molecular beam of ortho-water. The beam we formed also had a particular spin projection. Thus, in the presence of holding magnetic fields, the water molecules are hyperpolarized, laying the foundation for ultrasensitive NMR experiments in the future.

  4. A Pulsed Laser and Molecular Beam Apparatus for Surface Studies

    DTIC Science & Technology

    1985-03-01

    will be carried out are in part described in the proposal A Pulsed Laser and Molecular Beam Apparatus for Surface Studies submitted by Howard ... University in November 1982 for review by AFOSR, under the DOD University Instrumentation Program. This report describes the progress made during the

  5. Seabed deposits classification at the Precious Stone Mountain hydrothermal field using MultiBeam sonar data

    NASA Astrophysics Data System (ADS)

    Tao, C.; Zhang, G.; Li, H.; Zhou, J.; Liu, W.; Deng, X.; Chen, S.

    2013-12-01

    The seabed deposits type and distribution are very complex at the hydrothermal field. In this paper, we provided an approach to study the seabed deposits classification at the Precious Stone Mountain hydrothermal field (PSMHF) using MultiBeam sonar data (Figure 1). The PSMHF was found in the Galapogas microplate at the Leg 3 of the Chinese COMRA 21st Cruise. Using this approach, the seabed deposits at the PSMHF are mainly classified into three types, which are rock, breccia and sediment, respectively. We can find the distribution of the three types of seabed deposits according to the sonar back-scattering data. The rocks are mostly distributed around the hydrothermal vent. The breccia are located at the foot of the vent. Most sediments are distributed at the southwest to the vent due to bottom current. Combining with seabed video, TV-Grab sample and the backscatter data, we draw the map of the seabed deposits distribution at the PSMHF (Figure 2). Figure 1 The flow chart of the seabed deposits classification approach Figure 2 The seabed deposits distribution of the PSMHF

  6. High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

    PubMed Central

    2011-01-01

    We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell. PMID:22040124

  7. Transferring-free and large-area graphitic carbon film growth by using molecular beam epitaxy at low growth temperature

    NASA Astrophysics Data System (ADS)

    Lin, Meng-Yu; Wang, Cheng-Hung; Pao, Chun-Wei; Lin, Shih-Yen

    2015-09-01

    Graphitic carbon films prepared by using molecular beam epitaxy (MBE) on metal templates with different thicknesses deposited on SiO2/Si substrates are investigated in this paper. With thick Cu templates, only graphitic carbon flakes are obtained near the Cu grain boundaries at low growth temperatures on metal/SiO2 interfaces. By replacing the Cu templates with thin Ni templates, complete graphitic carbon films with superior crystalline quality is obtained at 600 °C on SiO2/Si substrates after removing the Ni templates. The enhanced attachment of the graphitic carbon film to the SiO2/Si substrates with reduced Ni thickness makes the approach a promising approach for transferring-free graphene preparation at low temperature by using MBE.

  8. An electron-beam dose deposition experiment: TIGER 1-D simulation code versus thermoluminescent dosimetry

    NASA Astrophysics Data System (ADS)

    Murrill, Steven R.; Tipton, Charles W.; Self, Charles T.

    1991-03-01

    The dose absorbed in an integrated circuit (IC) die exposed to a pulse of low-energy electrons is a strong function of both electron energy and surrounding packaging materials. This report describes an experiment designed to measure how well the Integrated TIGER Series one-dimensional (1-D) electron transport simulation program predicts dose correction factors for a state-of-the-art IC package and package/printed circuit board (PCB) combination. These derived factors are compared with data obtained experimentally using thermoluminescent dosimeters (TLD's) and the FX-45 flash x-ray machine (operated in electron-beam (e-beam) mode). The results of this experiment show that the TIGER 1-D simulation code can be used to accurately predict FX-45 e-beam dose deposition correction factors for reasonably complex IC packaging configurations.

  9. Continuous All-Optical Deceleration and Single-Photon Cooling of Molecular Beams

    DTIC Science & Technology

    2014-02-21

    PHYSICAL REVIEW A 89 , 023425 (2014) Continuous all-optical deceleration and single-photon cooling of molecular beams A. M. Jayich,1 A. C. Vutha,2 M...details including multilevel numerical simulations of strontium monohydride. These techniques are applicable to a large number of molecular species and...molecules that are considered difficult to directly laser cool—a class that includes many 1050-2947/2014/ 89 (2)/023425(8) 023425-1 ©2014 American

  10. Thermal conductivity and nanocrystalline structure of platinum deposited by focused ion beam.

    PubMed

    Alaie, Seyedhamidreza; Goettler, Drew F; Jiang, Ying-Bing; Abbas, Khawar; Baboly, Mohammadhosein Ghasemi; Anjum, D H; Chaieb, S; Leseman, Zayd C

    2015-02-27

    Pt deposited by focused ion beam (FIB) is a common material used for attachment of nanosamples, repair of integrated circuits, and synthesis of nanostructures. Despite its common use little information is available on its thermal properties. In this work, Pt deposited by FIB is characterized thermally, structurally, and chemically. Its thermal conductivity is found to be substantially lower than the bulk value of Pt, 7.2 W m(-1) K(-1) versus 71.6 W m(-1) K(-1) at room temperature. The low thermal conductivity is attributed to the nanostructure of the material and its chemical composition. Pt deposited by FIB is shown, via aberration corrected TEM, to be a segregated mix of nanocrystalline Pt and amorphous C with Ga and O impurities. Ga impurities mainly reside in the Pt while O is homogeneously distributed throughout. The Ga impurity, small grain size of the Pt, and the amorphous carbon between grains are the cause for the low thermal conductivity of this material. Since Pt deposited by FIB is a common material for affixing samples, this information can be used to assess systematic errors in thermal characterization of different nanosamples. This application is also demonstrated by thermal characterization of two carbon nanofibers and a correction using the reported thermal properties of the Pt deposited by FIB.

  11. Dual ion beam deposition of carbon films with diamondlike properties

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1984-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamondlike films generated by sputtering a graphite target.

  12. 3D Nanoprinting via laser-assisted electron beam induced deposition: growth kinetics, enhanced purity, and electrical resistivity

    DOE PAGES

    Lewis, Brett B.; Winkler, Robert; Sang, Xiahan; ...

    2017-04-07

    Here, we investigate the growth, purity, grain structure/morphology, and electrical resistivity of 3D platinum nanowires synthesized via electron beam induced deposition with and without an in situ pulsed laser assist process which photothermally couples to the growing Pt–C deposits. Notably, we demonstrate: 1) higher platinum concentration and a coalescence of the otherwise Pt–C nanogranular material, 2) a slight enhancement in the deposit resolution and 3) a 100-fold improvement in the conductivity of suspended nanowires grown with the in situ photothermal assist process, while retaining a high degree of shape fidelity.

  13. Understanding the high pressure properties of molecular solids and molecular surfaces deposited on hetrogeneous substrates

    NASA Technical Reports Server (NTRS)

    Etters, R. D.

    1985-01-01

    Work directed toward understanding the high pressure properties of molecular solids and molecular surfaces deposited on hetrogeneous substrates is reported. The motivation, apart from expanding our basic knowledge about these systems, was to understand and predict the properties of new materials synthesized at high pressure, including pressure induced metallic and superconducting states. As a consequence, information about the states of matter of the Jovian planets and their satellites, which are natural high pressure laboratories was also provided. The work on molecular surfaces and finite two and three dimensional clusters of atoms and molecules was connected with the composition and behavior of planetary atmospheres and on the processes involved in forming surface layers, which is vital to the development of composite materials and microcircuitry.

  14. Structural and growth aspects of electron beam physical vapor deposited NiO-CeO{sub 2} nanocomposite films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kuanr, Sushil Kumar; K, Suresh Babu, E-mail: sureshbabu.nst@pondiuni.edu.in

    2016-03-15

    Deposition of composite materials as thin film by electron beam physical vapor deposition technique (EB-PVD) still remains as a challenge. Here, the authors report the deposition of NiO-CeO{sub 2} (30/70 wt. %) composites on quartz substrate by EB-PVD. Two NiO-CeO{sub 2} nanocomposite targets—one as green compact and the other after sintering at 1250 °C—were used for the deposition. Though the targets varied with respect to physical properties such as crystallite size (11–45 nm) and relative density (44% and 96%), the resultant thin films exhibited a mean crystallite size in the range of 20–25 nm underlining the role of physical nature of deposition. In spitemore » of the crystalline nature of the targets and similar elemental concentration, a transformation from amorphous to crystalline structure was observed in thin films on using sintered target. Postannealing of the as deposited film at 800 °C resulted in a polycrystalline structure consisting of CeO{sub 2} and NiO. Deposition using pure CeO{sub 2} or NiO as target resulted in the preferential orientation toward (111) and (200) planes, respectively, showing the influence of adatoms on the evaporation and growth process of NiO-CeO{sub 2} composite. The results demonstrate the influence of electron beam gun power on the adatom energy for the growth process of composite oxide thin films.« less

  15. Optimization of Uranium Molecular Deposition for Alpha-Counting Sources

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Monzo, Ellen; Parsons-Moss, Tashi; Genetti, Victoria

    2016-12-12

    Method development for molecular deposition of uranium onto aluminum 1100 plates was conducted with custom plating cells at Lawrence Livermore National Laboratory. The method development focused primarily on variation of electrode type, which was expected to directly influence plated sample homogeneity. Solid disc platinum and mesh platinum anodes were compared and data revealed that solid disc platinum anodes produced more homogenous uranium oxide films. However, the activity distribution also depended on the orientation of the platinum electrode relative to the aluminum cathode, starting current, and material composition of the plating cell. Experiments demonstrated these variables were difficult to control undermore » the conditions available. Variation of plating parameters among a series of ten deposited plates yielded variations up to 30% in deposition efficiency. Teflon particles were observed on samples plated in Teflon cells, which poses a problem for alpha activity measurements of the plates. Preliminary electropolishing and chemical polishing studies were also conducted on the aluminum 1100 cathode plates.« less

  16. Combinatorial screening of halide perovskite thin films and solar cells by mask-defined IR laser molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Kawashima, Kazuhiro; Okamoto, Yuji; Annayev, Orazmuhammet; Toyokura, Nobuo; Takahashi, Ryota; Lippmaa, Mikk; Itaka, Kenji; Suzuki, Yoshikazu; Matsuki, Nobuyuki; Koinuma, Hideomi

    2017-12-01

    As an extension of combinatorial molecular layer epitaxy via ablation of perovskite oxides by a pulsed excimer laser, we have developed a laser molecular beam epitaxy (MBE) system for parallel integration of nano-scaled thin films of organic-inorganic hybrid materials. A pulsed infrared (IR) semiconductor laser was adopted for thermal evaporation of organic halide (A-site: CH3NH3I) and inorganic halide (B-site: PbI2) powder targets to deposit repeated A/B bilayer films where the thickness of each layer was controlled on molecular layer scale by programming the evaporation IR laser pulse number, length, or power. The layer thickness was monitored with an in situ quartz crystal microbalance and calibrated against ex situ stylus profilometer measurements. A computer-controlled movable mask system enabled the deposition of combinatorial thin film libraries, where each library contains a vertically homogeneous film with spatially programmable A- and B-layer thicknesses. On the composition gradient film, a hole transport Spiro-OMeTAD layer was spin-coated and dried followed by the vacuum evaporation of Ag electrodes to form the solar cell. The preliminary cell performance was evaluated by measuring I-V characteristics at seven different positions on the 12.5 mm × 12.5 mm combinatorial library sample with seven 2 mm × 4 mm slits under a solar simulator irradiation. The combinatorial solar cell library clearly demonstrated that the energy conversion efficiency sharply changes from nearly zero to 10.2% as a function of the illumination area in the library. The exploration of deposition parameters for obtaining optimum performance could thus be greatly accelerated. Since the thickness ratio of PbI2 and CH3NH3I can be freely chosen along the shadow mask movement, these experiments show the potential of this system for high-throughput screening of optimum chemical composition in the binary film library and application to halide perovskite solar cell.

  17. Combinatorial screening of halide perovskite thin films and solar cells by mask-defined IR laser molecular beam epitaxy

    PubMed Central

    Kawashima, Kazuhiro; Okamoto, Yuji; Annayev, Orazmuhammet; Toyokura, Nobuo; Takahashi, Ryota; Lippmaa, Mikk; Itaka, Kenji; Suzuki, Yoshikazu; Matsuki, Nobuyuki; Koinuma, Hideomi

    2017-01-01

    Abstract As an extension of combinatorial molecular layer epitaxy via ablation of perovskite oxides by a pulsed excimer laser, we have developed a laser molecular beam epitaxy (MBE) system for parallel integration of nano-scaled thin films of organic–inorganic hybrid materials. A pulsed infrared (IR) semiconductor laser was adopted for thermal evaporation of organic halide (A-site: CH3NH3I) and inorganic halide (B-site: PbI2) powder targets to deposit repeated A/B bilayer films where the thickness of each layer was controlled on molecular layer scale by programming the evaporation IR laser pulse number, length, or power. The layer thickness was monitored with an in situ quartz crystal microbalance and calibrated against ex situ stylus profilometer measurements. A computer-controlled movable mask system enabled the deposition of combinatorial thin film libraries, where each library contains a vertically homogeneous film with spatially programmable A- and B-layer thicknesses. On the composition gradient film, a hole transport Spiro-OMeTAD layer was spin-coated and dried followed by the vacuum evaporation of Ag electrodes to form the solar cell. The preliminary cell performance was evaluated by measuring I-V characteristics at seven different positions on the 12.5 mm × 12.5 mm combinatorial library sample with seven 2 mm × 4 mm slits under a solar simulator irradiation. The combinatorial solar cell library clearly demonstrated that the energy conversion efficiency sharply changes from nearly zero to 10.2% as a function of the illumination area in the library. The exploration of deposition parameters for obtaining optimum performance could thus be greatly accelerated. Since the thickness ratio of PbI2 and CH3NH3I can be freely chosen along the shadow mask movement, these experiments show the potential of this system for high-throughput screening of optimum chemical composition in the binary film library and application to halide perovskite solar cell. PMID

  18. Combinatorial screening of halide perovskite thin films and solar cells by mask-defined IR laser molecular beam epitaxy.

    PubMed

    Kawashima, Kazuhiro; Okamoto, Yuji; Annayev, Orazmuhammet; Toyokura, Nobuo; Takahashi, Ryota; Lippmaa, Mikk; Itaka, Kenji; Suzuki, Yoshikazu; Matsuki, Nobuyuki; Koinuma, Hideomi

    2017-01-01

    As an extension of combinatorial molecular layer epitaxy via ablation of perovskite oxides by a pulsed excimer laser, we have developed a laser molecular beam epitaxy (MBE) system for parallel integration of nano-scaled thin films of organic-inorganic hybrid materials. A pulsed infrared (IR) semiconductor laser was adopted for thermal evaporation of organic halide (A-site: CH 3 NH 3 I) and inorganic halide (B-site: PbI 2 ) powder targets to deposit repeated A/B bilayer films where the thickness of each layer was controlled on molecular layer scale by programming the evaporation IR laser pulse number, length, or power. The layer thickness was monitored with an in situ quartz crystal microbalance and calibrated against ex situ stylus profilometer measurements. A computer-controlled movable mask system enabled the deposition of combinatorial thin film libraries, where each library contains a vertically homogeneous film with spatially programmable A- and B-layer thicknesses. On the composition gradient film, a hole transport Spiro-OMeTAD layer was spin-coated and dried followed by the vacuum evaporation of Ag electrodes to form the solar cell. The preliminary cell performance was evaluated by measuring I - V characteristics at seven different positions on the 12.5 mm × 12.5 mm combinatorial library sample with seven 2 mm × 4 mm slits under a solar simulator irradiation. The combinatorial solar cell library clearly demonstrated that the energy conversion efficiency sharply changes from nearly zero to 10.2% as a function of the illumination area in the library. The exploration of deposition parameters for obtaining optimum performance could thus be greatly accelerated. Since the thickness ratio of PbI 2 and CH 3 NH 3 I can be freely chosen along the shadow mask movement, these experiments show the potential of this system for high-throughput screening of optimum chemical composition in the binary film library and application to halide perovskite solar cell.

  19. Injected ion energy dependence of SiC film deposited by low-energy SiC3H9+ ion beam produced from hexamethyldisilane

    NASA Astrophysics Data System (ADS)

    Yoshimura, Satoru; Sugimoto, Satoshi; Takeuchi, Takae; Murai, Kensuke; Kiuchi, Masato

    2018-04-01

    We mass-selected SiC3H9+ ions from various fragments produced through the decomposition of hexamethyldisilane, and finally produced low-energy SiC3H9+ ion beams. The ion beams were injected into Si(1 0 0) substrates and the dependence of deposited films on injected ion energy was then investigated. Injected ion energies were 20, 100, or 200 eV. Films obtained were investigated with X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. X-ray diffraction and X-ray photoelectron spectroscopy of the substrates obtained following the injection of 20 eV ions demonstrated the occurrence of silicon carbide film (3C-SiC) deposition. On the other hand, Raman spectroscopy showed that the films deposited by the injection of 100 or 200 eV ions included 3C-SiC plus diamond-like carbon. Ion beam deposition using hexamethyldisilane-derived 20 eV SiC3H9+ ions is an efficient technique for 3C-SiC film formation on Si substrates.

  20. Partially Ionized Beam Deposition of Silicon-Dioxide and Aluminum Thin Films - Defects Generation.

    NASA Astrophysics Data System (ADS)

    Wong, Justin Wai-Chow

    1987-09-01

    Detect formation in SiO_2 and Al thin films and interfaces were studied using a partially ionized beam (PIB) deposition technique. The evaporated species (the deposition material) were partially ionized to give an ion/atom ratio of <=q0.1% and the substrate was biased at 0-5kV during the deposition. The results suggest that due to the ion bombardment, stoichiometric SiO_2 films can be deposited at a low substrate temperature (~300 ^circC) and low oxygen pressure (<=q10^{-4} Torr). Such deposition cannot be achieved using conventional evaporation-deposition techniques. However, traps and mobile ions were observed in the oxide and local melt-down was observed when a sufficiently high electric field was applied to the film. For the PIB Al deposition on the Si substrate, stable Al/Si Schottky contact was formed when the substrate bias was <=q1kV. For a substrate bias of 2.5kV, the capacitance of the Al/Si interface increased dramatically. A model of self-ion implantation with a p-n junction created by the Al^+ ion implantation was proposed and tested to explain the increase of the interface capacitance. Several deep level states at the Al/Si interface were observed using Deep Level Transient Spectroscopy (DLTS) technique when the film was deposited at a bias of 3kV. The PIB Al films deposited on the Si substrate showed unusually strong electromigration resistance under high current density operation. This phenomenon was explained by the highly oriented microstructure of the Al films created by the self-ion bombardment during deposition. These findings show that PIB has potential applications in a number of areas, including low temperature thin film deposition, and epitaxial growth of thin films in the microelectronics thin film industry.

  1. Stacking InAs quantum dots over ErAs semimetal nanoparticles on GaAs (0 0 1) using molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Zhang, Yuanchang; Eyink, Kurt G.; Grazulis, Lawrence; Hill, Madelyn; Peoples, Joseph; Mahalingam, Krishnamurthy

    2017-11-01

    Hybrid nanostructures are known to elicit an enhanced optical response. We study the directed alignment of ErAs metal nanoparticle (NP) and InAs quantum dot (QD) using molecular beam eptaxy (MBE) in a GaAs matrix. Due to high surface free energy caused by the crystal structure difference, overgrowth of an ErAs NP with GaAs forms a depression that condenses subsequent InAs adatoms to form an inverted QD self-aligned to the underlying ErAs NP. The ErAs NP growth, GaAs overgrowth, and InAs QD deposition were carefully controlled and studied with transmission electron microscopy (TEM) and atomic force microscopy (AFM) to investigate their effects on the QD-NP alignment.

  2. Advanced Shutter Control for a Molecular Beam Epitaxy Reactor

    DTIC Science & Technology

    An open-source hardware and software-based shutter controller solution was developed that communicates over Ethernet with our original equipment...manufacturer (OEM) molecular beam epitaxy (MBE) reactor control software. An Arduino Mega microcontroller is the used for the brain of the shutter... controller , while a custom-designed circuit board distributes 24-V power to each of the 16 shutter solenoids available on the MBE. Using Ethernet

  3. Comparison of the Al back contact deposited by sputtering, e-beam, or thermal evaporation for inverted perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Wahl, Tina; Hanisch, Jonas; Ahlswede, Erik

    2018-04-01

    In this work, we present inverted perovskite solar cells with Al top electrodes, which were deposited by three different methods. Besides the widely used thermal evaporation of Al, we also used the industrially important high deposition rate processes sputtering and electron beam evaporation for aluminium electrodes and examined the influence of the deposition method on the solar cell performance. The current-voltage characteristics of as grown solar cells with sputtered and e-beam Al electrode show an s-shape due to damage done to the organic electronic transport layers (ETL) during Al deposition. It can be cured by a short annealing step at a moderate temperature so that fill factors  >60% and power conversion efficiencies of almost 12% with negligible hysteresis can be achieved. While solar cells with thermally evaporated Al electrode do not show an s-shape, they also exhibit a clear improvement after a short annealing step. In addition, we varied the thickness of the ETL consisting of a double layer ([6,6]-Phenyl-C61-butyric acid methyl ester and bathocuproine) and investigated the influence on the solar cell parameters for the three different Al deposition methods, which showed distinct dependencies on ETL thickness.

  4. Tunable molecular orientation and elevated thermal stability of vapor-deposited organic semiconductors

    PubMed Central

    Walters, Diane M.; Lyubimov, Ivan; de Pablo, Juan J.; Ediger, M. D.

    2015-01-01

    Physical vapor deposition is commonly used to prepare organic glasses that serve as the active layers in light-emitting diodes, photovoltaics, and other devices. Recent work has shown that orienting the molecules in such organic semiconductors can significantly enhance device performance. We apply a high-throughput characterization scheme to investigate the effect of the substrate temperature (Tsubstrate) on glasses of three organic molecules used as semiconductors. The optical and material properties are evaluated with spectroscopic ellipsometry. We find that molecular orientation in these glasses is continuously tunable and controlled by Tsubstrate/Tg, where Tg is the glass transition temperature. All three molecules can produce highly anisotropic glasses; the dependence of molecular orientation upon substrate temperature is remarkably similar and nearly independent of molecular length. All three compounds form “stable glasses” with high density and thermal stability, and have properties similar to stable glasses prepared from model glass formers. Simulations reproduce the experimental trends and explain molecular orientation in the deposited glasses in terms of the surface properties of the equilibrium liquid. By showing that organic semiconductors form stable glasses, these results provide an avenue for systematic performance optimization of active layers in organic electronics. PMID:25831545

  5. Molecular beam studies of stratospheric photochemistry

    NASA Astrophysics Data System (ADS)

    Moore, Teresa Anne

    1998-12-01

    Photochemistry of chlorine oxide containing species plays a major role in stratospheric ozone depletion. This thesis discusses two photodissociation studies of the key molecules ClONO2 and ClOOCl which were previously thought to only produce Cl-atom (ozone depleting) products at wavelengths relevant to the stratosphere. The development of a molecular beam source of ClOOCl and the photodissociation dynamics of the model system Cl2O are also discussed. In the first chapter, the photochemistry of ClONO2 is examined at 308 nm using the technique of photofragment translational spectroscopy. Two primary decomposition pathways, leading to Cl + NO3 and ClO + NO2, were observed, with a lower limit of 0.33 for the relative yield of ClO. The angular distributions for both channels were anisotropic, indicating that the dissociation occurs within a rotational period. Chapter two revisits the photodissociation dynamics of Cl2O at 248 and 308 nm, on which we had previously reported preliminary findings. At 248 nm, three distinct dissociation pathways leading to Cl + ClO products were resolved. At 308 nm, the angular distribution was slightly more isotropic that previously reported, leaving open the possibility that Cl2O excited at 308 nm lives longer than a rotational period. Chapter three describes the development and optimization of a molecular beam source of ClOOCl. We utilized pulsed laser photolysis of ClA2O to generate ClO radicals, and cooled the cell to promote three body recombination to form ClOOCl. The principal components in the beam were Cl2, Cl2O, and ClOOCl. In the fourth chapter, the photodissociation dynamics of ClOOCl are investigated at 248 and 308 nm. We observed multiple dissociation pathways which produced ClO + ClO and 2Cl + O2 products. The relative Cl:ClO product yields are 1.0:0.13 and 1.0:0.20 for ClOOCl photolysis at 248 and 308 nm, respectively. The upper limit for the relative yield of the ClO + ClO channel was 0.19 at 248 nm and 0.31 at 308 nm

  6. Electrochemical impedance spectroscopy on nanostructured carbon electrodes grown by supersonic cluster beam deposition

    NASA Astrophysics Data System (ADS)

    Bettini, Luca Giacomo; Bardizza, Giorgio; Podestà, Alessandro; Milani, Paolo; Piseri, Paolo

    2013-02-01

    Nanostructured porous films of carbon with density of about 0.5 g/cm3 and 200 nm thickness were deposited at room temperature by supersonic cluster beam deposition (SCBD) from carbon clusters formed in the gas phase. Carbon film surface topography, determined by atomic force microscopy, reveals a surface roughness of 16 nm and a granular morphology arising from the low kinetic energy ballistic deposition regime. The material is characterized by a highly disordered carbon structure with predominant sp2 hybridization as evidenced by Raman spectroscopy. The interface properties of nanostructured carbon electrodes were investigated by cyclic voltammetry and electrochemical impedance spectroscopy employing KOH 1 M solution as aqueous electrolyte. An increase of the double layer capacitance is observed when the electrodes are heat treated in air or when a nanostructured nickel layer deposited by SCBD on top of a sputter deposited film of the same metal is employed as a current collector instead of a plain metallic film. This enhancement is consistent with an improved charge injection in the active material and is ascribed to the modification of the electrical contact at the interface between the carbon and the metal current collector. Specific capacitance values up to 120 F/g have been measured for the electrodes with nanostructured metal/carbon interface.

  7. Formation mechanisms of boron oxide films fabricated by large-area electron beam-induced deposition of trimethyl borate

    PubMed Central

    Depond, Philip J

    2018-01-01

    Boron-containing materials are increasingly drawing interest for the use in electronics, optics, laser targets, neutron absorbers, and high-temperature and chemically resistant ceramics. In this article, the first investigation into the deposition of boron-based material via electron beam-induced deposition (EBID) is reported. Thin films were deposited using a novel, large-area EBID system that is shown to deposit material at rates comparable to conventional techniques such as laser-induced chemical vapor deposition. The deposition rate and stoichiometry of boron oxide fabricated by EBID using trimethyl borate (TMB) as precursor is found to be critically dependent on the substrate temperature. By comparing the deposition mechanisms of TMB to the conventional, alkoxide-based precursor tetraethyl orthosilicate it is revealed that ligand chemistry does not precisely predict the pathways leading to deposition of material via EBID. The results demonstrate the first boron-containing material deposited by the EBID process and the potential for EBID as a scalable fabrication technique that could have a transformative effect on the athermal deposition of materials. PMID:29765806

  8. Formation mechanisms of boron oxide films fabricated by large-area electron beam-induced deposition of trimethyl borate.

    PubMed

    Martin, Aiden A; Depond, Philip J

    2018-01-01

    Boron-containing materials are increasingly drawing interest for the use in electronics, optics, laser targets, neutron absorbers, and high-temperature and chemically resistant ceramics. In this article, the first investigation into the deposition of boron-based material via electron beam-induced deposition (EBID) is reported. Thin films were deposited using a novel, large-area EBID system that is shown to deposit material at rates comparable to conventional techniques such as laser-induced chemical vapor deposition. The deposition rate and stoichiometry of boron oxide fabricated by EBID using trimethyl borate (TMB) as precursor is found to be critically dependent on the substrate temperature. By comparing the deposition mechanisms of TMB to the conventional, alkoxide-based precursor tetraethyl orthosilicate it is revealed that ligand chemistry does not precisely predict the pathways leading to deposition of material via EBID. The results demonstrate the first boron-containing material deposited by the EBID process and the potential for EBID as a scalable fabrication technique that could have a transformative effect on the athermal deposition of materials.

  9. Low leakage current gate dielectrics prepared by ion beam assisted deposition for organic thin film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Chang Su; Jo, Sung Jin; Kim, Jong Bok; Ryu, Seung Yoon; Noh, Joo Hyon; Baik, Hong Koo; Lee, Se Jong; Kim, Youn Sang

    2007-12-01

    This communication reports on the fabrication of low operating voltage pentacene thin-film transistors with high-k gate dielectrics by ion beam assisted deposition (IBAD). These densely packed dielectric layers by IBAD show a much lower level of leakage current than those created by e-beam evaporation. These results, from the fact that those thin films deposited with low adatom mobility, have an open structure, consisting of spherical grains with pores in between, that acts as a significant path for leakage current. By contrast, our results demonstrate the potential to limit this leakage. The field effect mobility, on/off current ratio, and subthreshold slope obtained from pentacene thin-film transistors (TFTs) were 1.14 cm2/V s, 105, and 0.41 V/dec, respectively. Thus, the high-k gate dielectrics obtained by IBAD show promise in realizing low leakage current, low voltage, and high mobility pentacene TFTs.

  10. Molecular Beam Studies of Hot Atom Chemical Reactions: Reactive Scattering of Energetic Deuterium Atoms

    DOE R&D Accomplishments Database

    Continetti, R. E.; Balko, B. A.; Lee, Y. T.

    1989-02-01

    A brief review of the application of the crossed molecular beams technique to the study of hot atom chemical reactions in the last twenty years is given. Specific emphasis is placed on recent advances in the use of photolytically produced energetic deuterium atoms in the study of the fundamental elementary reactions D + H{sub 2} -> DH + H and the substitution reaction D + C{sub 2}H{sub 2} -> C{sub 2}HD + H. Recent advances in uv laser and pulsed molecular beam techniques have made the detailed study of hydrogen atom reactions under single collision conditions possible.

  11. Molecular Beam Epitaxy 1990: Proceedings of the International Conference on Molecular Beam Epitaxy (6th) Held in La Jolla, California on 27-31 August 1990.

    DTIC Science & Technology

    1991-01-01

    Hagino Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432, Japan This paper describes composition control of GaAsP...by performing As controlled RHEED oscillation experiments 110]. The SPMQW essentially equivalent to 20% and 33% alloys were grown by deposition of 1...and the Office of Naval Research . Hence RTD No. 28 was grown at 425 0 C with the As 4 beam equivalent pressure (BEP) reduced to 1.6 x 10 - " Torr

  12. Gas Source Molecular Beam Epitaxial Growth of GaN

    DTIC Science & Technology

    1992-11-25

    identify by block number) FIELW GROUP SUB-GROUP 19. ABSTRACT (Continue on reverse if necessary and Identify by block number) Aluminum gallium nitride (AlGaN...AND TASK OBJECTIVES Aluminum gallium nitride (AIGaN) has long been recognized as a promising radiation hard optoelectronic material. AIGaN has a wide...Efficient, pure, low temperature sources for the gas source molecular beam epitaxial (GSMBE) growth of aluminum gallium nitride will essentially

  13. Quantum dot formation by molecular beam epitaxy of Ge on Si(100)

    NASA Astrophysics Data System (ADS)

    Chaparro, Sergio Arturo

    1999-11-01

    A new technique for producing electron systems with quantum confinement in three dimensions, quantum dots, has been studied. These quantum dots are coherent islands spontaneously formed at the early stages of Ge/Si(100) epitaxy due to the misfit of the system. Our goal is to gain understanding and control of the growth process so uniform quantum dot ensembles can be created for possible use in optoelectronic devices. A UHV Molecular Beam Epitaxy (MBE) growth system was built and calibrated to grow our samples. The samples were prepared by depositing Ge onto a Si(100) surface cleaned by flash desorption of the native oxides. Varying the growth rates from 0.6 ML/min to 4.0 ML/min, the substrate temperature from 450°C to 600°C, and the coverage from 3.5 ML to 14 ML produces different sample morphologies. After growth, the samples were analyzed both in situ and ex situ. The in situ analysis consisted of Auger electron spectroscopy for elemental analysis and reflection high energy electron diffraction, for surface structure analysis. The ex situ analysis included atomic force microscopy (AFM), transmission electron microscopy (TEM) and/or scanning electron microscopy (SEM). Many digital images were obtained from the microscope analysis. A novel, computer based, analysis was developed to extract the islands parameters from the microscope images. This data, which includes island area and average height for each island on every image, was used for a statistical analysis. Also from the data, island size distributions (histograms of island size) were generated. These measurements confirm that islands form after growth of a 3 ML wetting layer and that islands evolve as they grow. As more Ge is deposited these islands grow and as they grow they evolve from huts, square based pyramids, to domes, truncated pyramids, to dislocated domes. Our results show that the substrate temperature, deposition rate, and amount of deposited material are factors that affect the growth

  14. The role of low-energy electrons in focused electron beam induced deposition: four case studies of representative precursors

    PubMed Central

    Thorman, Rachel M; Kumar T. P., Ragesh; Fairbrother, D Howard

    2015-01-01

    Summary Focused electron beam induced deposition (FEBID) is a single-step, direct-write nanofabrication technique capable of writing three-dimensional metal-containing nanoscale structures on surfaces using electron-induced reactions of organometallic precursors. Currently FEBID is, however, limited in resolution due to deposition outside the area of the primary electron beam and in metal purity due to incomplete precursor decomposition. Both limitations are likely in part caused by reactions of precursor molecules with low-energy (<100 eV) secondary electrons generated by interactions of the primary beam with the substrate. These low-energy electrons are abundant both inside and outside the area of the primary electron beam and are associated with reactions causing incomplete ligand dissociation from FEBID precursors. As it is not possible to directly study the effects of secondary electrons in situ in FEBID, other means must be used to elucidate their role. In this context, gas phase studies can obtain well-resolved information on low-energy electron-induced reactions with FEBID precursors by studying isolated molecules interacting with single electrons of well-defined energy. In contrast, ultra-high vacuum surface studies on adsorbed precursor molecules can provide information on surface speciation and identify species desorbing from a substrate during electron irradiation under conditions more representative of FEBID. Comparing gas phase and surface science studies allows for insight into the primary deposition mechanisms for individual precursors; ideally, this information can be used to design future FEBID precursors and optimize deposition conditions. In this review, we give a summary of different low-energy electron-induced fragmentation processes that can be initiated by the secondary electrons generated in FEBID, specifically, dissociative electron attachment, dissociative ionization, neutral dissociation, and dipolar dissociation, emphasizing the

  15. The role of low-energy electrons in focused electron beam induced deposition: four case studies of representative precursors.

    PubMed

    Thorman, Rachel M; Kumar T P, Ragesh; Fairbrother, D Howard; Ingólfsson, Oddur

    2015-01-01

    Focused electron beam induced deposition (FEBID) is a single-step, direct-write nanofabrication technique capable of writing three-dimensional metal-containing nanoscale structures on surfaces using electron-induced reactions of organometallic precursors. Currently FEBID is, however, limited in resolution due to deposition outside the area of the primary electron beam and in metal purity due to incomplete precursor decomposition. Both limitations are likely in part caused by reactions of precursor molecules with low-energy (<100 eV) secondary electrons generated by interactions of the primary beam with the substrate. These low-energy electrons are abundant both inside and outside the area of the primary electron beam and are associated with reactions causing incomplete ligand dissociation from FEBID precursors. As it is not possible to directly study the effects of secondary electrons in situ in FEBID, other means must be used to elucidate their role. In this context, gas phase studies can obtain well-resolved information on low-energy electron-induced reactions with FEBID precursors by studying isolated molecules interacting with single electrons of well-defined energy. In contrast, ultra-high vacuum surface studies on adsorbed precursor molecules can provide information on surface speciation and identify species desorbing from a substrate during electron irradiation under conditions more representative of FEBID. Comparing gas phase and surface science studies allows for insight into the primary deposition mechanisms for individual precursors; ideally, this information can be used to design future FEBID precursors and optimize deposition conditions. In this review, we give a summary of different low-energy electron-induced fragmentation processes that can be initiated by the secondary electrons generated in FEBID, specifically, dissociative electron attachment, dissociative ionization, neutral dissociation, and dipolar dissociation, emphasizing the different

  16. Molecular layer deposition of alucone films using trimethylaluminum and hydroquinone

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Choudhury, Devika; Sarkar, Shaibal K., E-mail: shaibal.sarkar@iitb.ac.in; Mahuli, Neha

    2015-01-01

    A hybrid organic–inorganic polymer film grown by molecular layer deposition (MLD) is demonstrated here. Sequential exposures of trimethylaluminum [Al(CH{sub 3}){sub 3}] and hydroquinone [C{sub 6}H{sub 4}(OH){sub 2}] are used to deposit the polymeric films, which is a representative of a class of aluminum oxide polymers known as “alucones.” In-situ quartz crystal microbalance (QCM) studies are employed to determine the growth characteristics. An average growth rate of 4.1 Å per cycle at 150 °C is obtained by QCM and subsequently verified with x-ray reflectivity measurements. Surface chemistry during each MLD-half cycle is studied in depth by in-situ Fourier transform infrared (FTIR) vibrationmore » spectroscopy. Self limiting nature of the reaction is confirmed from both QCM and FTIR measurements. The conformal nature of the deposit, typical for atomic layer deposition and MLD, is verified with transmission electron microscopy imaging. Secondary ion mass spectroscopy measurements confirm the uniform elemental distribution along the depth of the films.« less

  17. Atmospheric pressure plasma analysis by modulated molecular beam mass spectrometry

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Aranda Gonzalvo, Y.; Whitmore, T.D.; Rees, J.A.

    Fractional number density measurements for a rf plasma 'needle' operating at atmospheric pressure have been obtained using a molecular beam mass spectrometer (MBMS) system designed for diagnostics of atmospheric plasmas. The MBMS system comprises three differentially pumped stages and a mass/energy analyzer and includes an automated beam-to-background measurement facility in the form of a software-controlled chopper mechanism. The automation of the beam modulation allows the neutral components in the plasma to be rapidly and accurately measured using the mass spectrometer by threshold ionization techniques. Data are reported for plasma generated by a needle plasma source operated using a helium/air mixture.more » In particular, data for the conversion of atmospheric oxygen and nitrogen into nitric oxide are discussed with reference to its significance for medical applications such as disinfecting wounds and dental cavities and for microsurgery.« less

  18. Thermal Conductivity Measurement of an Electron-Beam Physical-Vapor-Deposition Coating

    PubMed Central

    Slifka, A. J.; Filla, B. J.

    2003-01-01

    An industrial ceramic thermal-barrier coating designated PWA 266, processed by electron-beam physical-vapor deposition, was measured using a steady-state thermal conductivity technique. The thermal conductivity of the mass fraction 7 % yttria-stabilized zirconia coating was measured from 100 °C to 900 °C. Measurements on three thicknesses of coatings, 170 μm, 350 μm, and 510 μm resulted in thermal conductivity in the range from 1.5 W/(m·K) to 1.7 W/(m·K) with a combined relative standard uncertainty of 20 %. The thermal conductivity is not significantly dependent on temperature. PMID:27413601

  19. Thermal Conductivity Measurement of an Electron-Beam Physical-Vapor-Deposition Coating.

    PubMed

    Slifka, A J; Filla, B J

    2003-01-01

    An industrial ceramic thermal-barrier coating designated PWA 266, processed by electron-beam physical-vapor deposition, was measured using a steady-state thermal conductivity technique. The thermal conductivity of the mass fraction 7 % yttria-stabilized zirconia coating was measured from 100 °C to 900 °C. Measurements on three thicknesses of coatings, 170 μm, 350 μm, and 510 μm resulted in thermal conductivity in the range from 1.5 W/(m·K) to 1.7 W/(m·K) with a combined relative standard uncertainty of 20 %. The thermal conductivity is not significantly dependent on temperature.

  20. Effect of Backbone Chemistry on the Structure of Polyurea Films Deposited by Molecular Layer Deposition

    DOE PAGES

    Bergsman, David S.; Closser, Richard G.; Tassone, Christopher J.; ...

    2017-01-01

    An experimental investigation into the growth of polyurea films by molecular layer deposition was performed by examining trends in the growth rate, crystallinity, and orientation of chains as a function of backbone flexibility. Growth curves obtained for films containing backbones of aliphatic and phenyl groups indicate that an increase in backbone flexibility leads to a reduction in growth rate from 4 to 1 Å/cycle. Crystallinity measurements collected using grazing incidence X-ray diffraction and Fourier transform infrared spectroscopy suggest that some chains form paracrystalline, out-of-plane stacks of polymer segments with packing distances ranging from 4.4 to 3.7 Å depending on themore » monomer size. Diffraction intensity is largely a function of the homogeneity of the backbone. Near-edge X-ray absorption fine structure measurements for thin and thick samples show an average chain orientation of ~25° relative to the substrate across all samples, suggesting that changes in growth rate are not caused by differences in chain angle but instead may be caused by differences in the frequency of chain terminations. In conclusion, these results suggest a model of molecular layer deposition-based chain growth in which films consist of a mixture of upward growing chains and horizontally aligned layers of paracrystalline polymer segments.« less

  1. Preparation of a silicon surface for subsequent growth of dilute nitride alloys by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lazarenko, A. A.; Berezovskaya, T. N.; Denisov, D. V.; Sobolev, M. S.; Pirogov, E. V.; Nikitina, E. V.

    2017-11-01

    This article discusses the process of preparation of a silicon surface for subsequent growth of dilute nitride alloys by molecular-beam epitaxy. The method of preparation of Si (100) and Si (111) substrates was developed. This method provides reproducible high-quality silicon surface for molecular-beam epitaxy of Si-GaP heterostructures. As a result, it managed to reduce the eviction oxide temperature below 800 °C, which is an important parameter for the MBE technology.

  2. Analysis of electron beam induced deposition (EBID) of residual hydrocarbons in electron microscopy

    NASA Astrophysics Data System (ADS)

    Rykaczewski, Konrad; White, William B.; Fedorov, Andrei G.

    2007-03-01

    In this work we have developed a comprehensive dynamic model of electron beam induced deposition (EBID) of residual hydrocarbon coupling mass transport, electron transport and scattering, and species decomposition to predict the deposition of carbon nanopillars. The simulations predict the local species and electron density distributions, as well as the three-demensional morphology and the growth rate of the deposit. Since the process occurs in a high vacuum environment, surface diffusion is considered as the primary transport mode of surface-adsorbed hydrocarbon precursor. The governing surface transport equation (STE) of the adsorbed species is derived and solved numerically. The transport, scattering, and absorption of primary electron as well as secondary electron generation are treated using the Monte Carlo method. Low energy secondary electrons are the major contributors to hydrocarbon decomposition due to their energy range matching peak dissociation reaction cross section energies for precursor molecules. The deposit and substrate are treated as a continuous entity allowing the simulation of the growth of a realistically sized deposit rather than a large number of cells representing each individual atom as in previously published simulations [Mitsuishi et al., Ultramicroscopy 103, 17 (2005); Silvis-Cividjian, Ph.D. thesis, University of Delft, 2002]. Such formulation allows for simple coupling of the STE with the dynamic growth of the nanopillar. Three different growth regimes occurring in EBID are identified using scaling analysis, and simulations are used to describe the deposit morphology and precursor surface concentration specific for each growth regime.

  3. Study of nanostructure and ethanol vapor sensing performance of WO3 thin films deposited by e-beam evaporation method under different deposition angles: application in breath analysis devices

    NASA Astrophysics Data System (ADS)

    Amani, E.; Khojier, K.; Zoriasatain, S.

    2018-01-01

    This paper studies the effect of deposition angle on the crystallographic structure, surface morphology, porosity and subsequently ethanol vapor sensing performance of e-beam-evaporated WO3 thin films. The WO3 thin films were deposited by e-beam evaporation technique on SiO2/Si substrates under different deposition angles (0°, 30°, and 60°) and then post-annealed at 500 °C with a flow of oxygen for 4 h. Crystallographic structure and surface morphology of the samples were checked using X-ray diffraction method and atomic force microscopy, respectively. Physical adsorption isotherm was also used to measure the porosity and effective surface area of the samples. The electrical response of the samples was studied to different concentrations of ethanol vapor (10-50 ppm) at the temperature range of 140-260 °C and relative humidity of 80%. The results reveal that the WO3 thin film deposited under 30° angle shows more sensitivity to ethanol vapor than the other samples prepared in this work due to the more crystallinity, porosity, and effective surface area. The investigations also show that the sample deposited at 30° can be a good candidate as a breath analysis device at the operating temperature of 240 °C because of its high response, low detection limit, and reliability at high relative humidity.

  4. Supercritical fluid molecular spray film deposition and powder formation

    DOEpatents

    Smith, Richard D.

    1986-01-01

    Solid films are deposited, or fine powders formed, by dissolving a solid material into a supercritical fluid solution at an elevated pressure and then rapidly expanding the solution through a short orifice into a region of relatively low pressure. This produces a molecular spray which is directed against a substrate to deposit a solid thin film thereon, or discharged into a collection chamber to collect a fine powder. Upon expansion and supersonic interaction with background gases in the low pressure region, any clusters of solvent are broken up and the solvent is vaporized and pumped away. Solute concentration in the solution is varied primarily by varying solution pressure to determine, together with flow rate, the rate of deposition and to control in part whether a film or powder is produced and the granularity of each. Solvent clustering and solute nucleation are controlled by manipulating the rate of expansion of the solution and the pressure of the lower pressure region. Solution and low pressure region temperatures are also controlled.

  5. Fluoropolymer Films Deposited by Argon Ion-Beam Sputtering of Polytetrafluoroethylene

    NASA Technical Reports Server (NTRS)

    Golub, Morton A.; Banks, Bruce A.; Kliss, Mark (Technical Monitor)

    1998-01-01

    The FT-IR, XPS and UV spectra of fluoropolymer films (SPTFE-I) deposited by argon ion-beam sputtering of polytetrafluoroethylene (PTFE) were obtained and compared with prior corresponding spectra of fluoropolymer films (SPTFE-P) deposited by argon rf plasma sputtering of PTFE. Although the F/C ratios for SPTFE-I and -P (1.63 and 1.51) were similar, their structures were quite different in that there was a much higher concentration of CF2 groups in SPTFE-I than in SPTFE-P, ca. 61 and 33% of the total carbon contents, respectively. The FT-IR spectra reflect that difference, that for SPTFE-I showing a distinct doublet at 1210 and 1150 per centimeter while that for SPTFE-P presents a broad, featureless band at ca. 1250 per centimeter. The absorbance of the 1210-per centimeter band in SPTFE-I was proportional to the thickness of the film, in the range of 50-400 nanometers. The SPTFE-I was more transparent in the UV than SPTFE-P at comparable thickness. The mechanism for SPTFE-I formation likely involves "chopping off" of oligomeric segments of PTFE as an accompaniment to "plasma" polymerization of TFE monomer or other fluorocarbon fragments generated in situ from PTFE on impact with energetic Ar ions. Data are presented for SPTFE-I deposits and the associated Ar(+) bombarded PTFE targets where a fresh target was used for each run or a single target was used for a sequence of runs.

  6. Combinatorial synthesis and hydrogenation of Mg/Al libraries prepared by electron beam physical vapor deposition.

    PubMed

    Garcia, Gemma; Doménech-Ferrer, Roger; Pi, Francesc; Santiso, Josep; Rodríguez-Viejo, Javier

    2007-01-01

    We have grown thin film libraries of the Mg-Al system using a high-throughput synthesis methodology that combines the sequential deposition of pure elements (Mg and Al) by an electron-beam (e-beam) evaporation technique and the use of a special set of moving shadow masks. This novel mask has been designed to simultaneously prepare four identical arrays of different compositions that will permit the characterization of the same library after several treatments. Wavelength dispersive spectroscopy (WDS) and micro-X-ray diffraction have been used as high-throughput screening techniques for the determination of the composition and structure of every member of the library in the as-deposited state and after hydrogenation at 1 atm of H2 during 24 h at three different temperatures: 60, 80, and 110 degrees C. We have analyzed the influence of the Mg-Al ratio on the hydrogenation of magnesium, as well as on the appearance of complex hydride phases. We have also found that aluminum can act as a catalyzer for the hydrogenation reaction of magnesium.

  7. Structural control of In2Se3 polycrystalline thin films by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Okamoto, T.; Nakada, Y.; Aoki, T.; Takaba, Y.; Yamada, A.; Konagai, M.

    2006-09-01

    Structural control of In2Se3 polycrystalline thin films was attempted by molecular beam epitaxy (MBE) technique. In2Se3 polycrystalline films were obtained on glass substrates at substrate temperatures above 400 °C. VI/III ratio greatly affected crystal structure of In2Se3 polycrystalline films. Mixtures of -In2Se3 and γ-In2Se3 were obtained at VI/III ratios greater than 20, and layered InSe polycrystalline films were formed at VI/III ratios below 1. γ-In2Se3 polycrystalline thin films without α-phase were successfully deposited with VI/III ratios in a range of 2 to 4. Photocurrent spectra of the γ-In2Se3 polycrystalline films showed an abrupt increase at approximately 1.9 eV, which almost corresponds with the reported bandgap of γ-In2Se3. Dark conductivity and photoconductivity measured under solar simulator light (AM 1.5, 100 mW/cm2) were approximately 10-9 and 10-5 S/cm in the γ-In2Se3 polycrystalline thin films, respectively.

  8. Visible-light vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Saarinen, Mika J.; Xiang, Ning; Dumitrescu, Mihail M.; Vilokkinen, Ville; Melanen, Petri; Orsila, Seppo; Uusimaa, Petteri; Savolainen, Pekka; Pessa, Markus

    2001-05-01

    Visible vertical-cavity surface-emitting lasers (VCSELs) are potential light sources for polymer optical fibre (POF) data transmission systems. Minimum attenuation of light in standard PMMA-POFs occurs at about 650 nm. For POFs of a few tens of meters in length VCSELs at slightly longer wavelengths (670 - 690 nm) are also acceptable. So far, the visible VCSELs have been grown by metal organic chemical vapour deposition (MOCVD). They may also be grown by a novel variant of molecular beam epitaxy (MBE), a so-called all-solid-source MBE or SSMBE. In this paper, we describe growth of the first visible-light VCSELs by SSMBE and present the main results obtained. In particular, we have achieved lasing action at a sub-milliamp cw drive current for a VCSEL having the emission window of 8um in diameter, while a 10um device exhibited an external quantum efficiency of 6.65% in CW operation at room temperature. The lasing action up to temperature of 45°C has been demonstrated.

  9. Depositions of molecular nanomagnets on graphene investigated with atomic force microscopy and Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Walker, Sean; Vojvodin, Cameron; Li, Zhi; Willick, Kyle; Tang, Xiaowu (Shirley); Baugh, Jonathan

    Molecular nanomagnets display interesting quantum phenomena, and have been proposed as potential building blocks in a variety of nanoelectronic devices with applications to both quantum memory and quantum information processing. These devices often require deposition of the molecules either sparsely (e.g. for single molecule devices) or as a thin-film. Consequently, in order for these devices to be successfully realized, the nature of the interactions between nanomagnets and the surfaces on which they may be deposited needs to be understood. We have investigated the depositions of molecular nanomagnets on graphene using atomic force microscopy and Raman spectrocopy. The nanomagnets contained a range of chemical functional groups including long alkyl chains and extended π-systems of electrons. By comparing their binding affinities we learn about the nature of the interactions between the different functional groups and the graphene.

  10. Tunable molecular orientation and elevated thermal stability of vapor-deposited organic semiconductors

    DOE PAGES

    Dalal, Shakeel S.; Walters, Diane M.; Lyubimov, Ivan; ...

    2015-03-23

    Physical vapor deposition is commonly used to prepare organic glasses that serve as the active layers in light-emitting diodes, photovoltaics, and other devices. Recent work has shown that orienting the molecules in such organic semiconductors can significantly enhance device performance. In this paper, we apply a high-throughput characterization scheme to investigate the effect of the substrate temperature (T substrate) on glasses of three organic molecules used as semiconductors. The optical and material properties are evaluated with spectroscopic ellipsometry. We find that molecular orientation in these glasses is continuously tunable and controlled by T substrate/T g, where T g is themore » glass transition temperature. All three molecules can produce highly anisotropic glasses; the dependence of molecular orientation upon substrate temperature is remarkably similar and nearly independent of molecular length. All three compounds form “stable glasses” with high density and thermal stability, and have properties similar to stable glasses prepared from model glass formers. Simulations reproduce the experimental trends and explain molecular orientation in the deposited glasses in terms of the surface properties of the equilibrium liquid. Finally, by showing that organic semiconductors form stable glasses, these results provide an avenue for systematic performance optimization of active layers in organic electronics.« less

  11. Electron-Beam Vapor Deposition of Mold Inserts Final Report CRADA No. TSB-777-94

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Shepp, T.; Feeley, T.

    Lawrence Livermore National Laboratory and H.G.G. Laser Fare, Inc. studied the application of electron-beam vapor deposition technology to the production of mold inserts for use in an injection molding machine by Laser Fare. Laser Fare provided LLNL with the requirements of the mold inserts as well as sample inserts. LLNL replicated the mold insert(s) to Laser Fare for testing by Laser Fare.

  12. Analysis of the Alkali Metal Diatomic Spectra; Using molecular beams and ultracold molecules

    NASA Astrophysics Data System (ADS)

    Kim, Jin-Tae

    2014-12-01

    This ebook illustrates the complementarity of molecular beam (MB) spectra and ultracold molecule (UM) spectra in unraveling the complex electronic spectra of diatomic alkali metal molecules, using KRb as a prime example. Researchers interested in molecular spectroscopy, whether physicist, chemist, or engineer, may find this ebook helpful and may be able to apply similar ideas to their molecules of interest.

  13. Comparative analysis of electrophysical properties of ceramic tantalum pentoxide coatings, deposited by electron beam evaporation and magnetron sputtering methods

    NASA Astrophysics Data System (ADS)

    Donkov, N.; Mateev, E.; Safonov, V.; Zykova, A.; Yakovin, S.; Kolesnikov, D.; Sudzhanskaya, I.; Goncharov, I.; Georgieva, V.

    2014-12-01

    Ta2O5 ceramic coatings have been deposited on glass substrates by e-beam evaporation and magnetron sputtering methods. For the magnetron sputtering process Ta target was used. X-ray diffraction measurements show that these coatings are amorphous. XPS survey spectra of the ceramic Ta2O5 coatings were obtained. All spectra consist of well-defined XPS lines of Ta 4f, 4d, 4p and 4s; O 1s; C 1s. Ta 4f doublets are typical for Ta2O5 coatings with two main peaks. Scanning electron microscopy and atomic force microscopy images of the e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have revealed a relatively flat surface with no cracks. The dielectric properties of the tantalum pentoxide coatings have been investigated in the frequency range of 100 Hz to 1 MHz. The electrical behaviour of e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have also been compared. The deposition process conditions principally effect the structure parameters and electrical properties of Ta2O5 ceramic coatings. The coatings deposited by different methods demonstrate the range of dielectric parameters due to the structural and stoichiometric composition changes

  14. Organic and inorganic–organic thin film structures by molecular layer deposition: A review

    PubMed Central

    Sundberg, Pia

    2014-01-01

    Summary The possibility to deposit purely organic and hybrid inorganic–organic materials in a way parallel to the state-of-the-art gas-phase deposition method of inorganic thin films, i.e., atomic layer deposition (ALD), is currently experiencing a strongly growing interest. Like ALD in case of the inorganics, the emerging molecular layer deposition (MLD) technique for organic constituents can be employed to fabricate high-quality thin films and coatings with thickness and composition control on the molecular scale, even on complex three-dimensional structures. Moreover, by combining the two techniques, ALD and MLD, fundamentally new types of inorganic–organic hybrid materials can be produced. In this review article, we first describe the basic concepts regarding the MLD and ALD/MLD processes, followed by a comprehensive review of the various precursors and precursor pairs so far employed in these processes. Finally, we discuss the first proof-of-concept experiments in which the newly developed MLD and ALD/MLD processes are exploited to fabricate novel multilayer and nanostructure architectures by combining different inorganic, organic and hybrid material layers into on-demand designed mixtures, superlattices and nanolaminates, and employing new innovative nanotemplates or post-deposition treatments to, e.g., selectively decompose parts of the structure. Such layer-engineered and/or nanostructured hybrid materials with exciting combinations of functional properties hold great promise for high-end technological applications. PMID:25161845

  15. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, A.R.; Auciello, O.

    1990-05-08

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

  16. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, Alan R.; Auciello, Orlando

    1990-01-01

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

  17. Height Control and Deposition Measurement for the Electron Beam Free Form Fabrication (EBF3) Process

    NASA Technical Reports Server (NTRS)

    Hafley, Robert A. (Inventor); Seufzer, William J. (Inventor)

    2017-01-01

    A method of controlling a height of an electron beam gun and wire feeder during an electron freeform fabrication process includes utilizing a camera to generate an image of the molten pool of material. The image generated by the camera is utilized to determine a measured height of the electron beam gun relative to the surface of the molten pool. The method further includes ensuring that the measured height is within the range of acceptable heights of the electron beam gun relative to the surface of the molten pool. The present invention also provides for measuring a height of a solid metal deposit formed upon cooling of a molten pool. The height of a single point can be measured, or a plurality of points can be measured to provide 2D or 3D surface height measurements.

  18. Dual-ion-beam deposition of carbon films with diamond-like properties

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1985-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamond like films generated by sputtering a graphite target.

  19. Energy deposition of H and He ion beams in hydroxyapatite films: a study with implications for ion-beam cancer therapy.

    PubMed

    Limandri, Silvina; de Vera, Pablo; Fadanelli, Raul C; Nagamine, Luiz C C M; Mello, Alexandre; Garcia-Molina, Rafael; Behar, Moni; Abril, Isabel

    2014-02-01

    Ion-beam cancer therapy is a promising technique to treat deep-seated tumors; however, for an accurate treatment planning, the energy deposition by the ions must be well known both in soft and hard human tissues. Although the energy loss of ions in water and other organic and biological materials is fairly well known, scarce information is available for the hard tissues (i.e., bone), for which the current stopping power information relies on the application of simple additivity rules to atomic data. Especially, more knowledge is needed for the main constituent of human bone, calcium hydroxyapatite (HAp), which constitutes 58% of its mass composition. In this work the energy loss of H and He ion beams in HAp films has been obtained experimentally. The experiments have been performed using the Rutherford backscattering technique in an energy range of 450-2000 keV for H and 400-5000 keV for He ions. These measurements are used as a benchmark for theoretical calculations (stopping power and mean excitation energy) based on the dielectric formalism together with the MELF-GOS (Mermin energy loss function-generalized oscillator strength) method to describe the electronic excitation spectrum of HAp. The stopping power calculations are in good agreement with the experiments. Even though these experimental data are obtained for low projectile energies compared with the ones used in hadron therapy, they validate the mean excitation energy obtained theoretically, which is the fundamental quantity to accurately assess energy deposition and depth-dose curves of ion beams at clinically relevant high energies. The effect of the mean excitation energy choice on the depth-dose profile is discussed on the basis of detailed simulations. Finally, implications of the present work on the energy loss of charged particles in human cortical bone are remarked.

  20. A simple and compact mechanical velocity selector of use to analyze/select molecular alignment in supersonic seeded beams

    NASA Astrophysics Data System (ADS)

    Pirani, F.; Cappelletti, D.; Vecchiocattivi, F.; Vattuone, L.; Gerbi, A.; Rocca, M.; Valbusa, U.

    2004-02-01

    A light and compact mechanical velocity selector, of novel design, for applications in supersonic molecular-beam studies has been developed. It represents a simplified version of the traditional, 50 year old, slotted disks velocity selector. Taking advantage of new materials and improved machining techniques, the new version has been realized with only two rotating slotted disks, driven by an electrical motor with adjustable frequency of rotation, and thus has a much smaller weight and size with respect to the original design, which may allow easier implementation in most of the available molecular-beam apparatuses. This new type of selector, which maintains a sufficiently high velocity resolution, has been developed for sampling molecules with different degrees of rotational alignment, like those emerging from a seeded supersonic expansion. This sampling is the crucial step to realize new molecular-beam experiments to study the effect of molecular alignment in collisional processes.

  1. Electric field-tunable Ba{sub x}Sr{sub 1-x}TiO{sub 3} films with high figures of merit grown by molecular beam epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mikheev, Evgeny; Kajdos, Adam P.; Hauser, Adam J.

    2012-12-17

    We report on the dielectric properties of Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST) films grown by molecular beam epitaxy on epitaxial Pt bottom electrodes. Paraelectric films (x Less-Than-Or-Equivalent-To 0.5) exhibit dielectric losses that are similar to those of BST single crystals and ceramics. Films with device quality factors greater than 1000 and electric field tunabilities exceeding 1:5 are demonstrated. The results provide evidence for the importance of stoichiometry control and the use of a non-energetic deposition technique for achieving high figures of merit of tunable devices with BST thin films.

  2. Closed-Loop Process Control for Electron Beam Freeform Fabrication and Deposition Processes

    NASA Technical Reports Server (NTRS)

    Taminger, Karen M. (Inventor); Hofmeister, William H. (Inventor); Martin, Richard E. (Inventor); Hafley, Robert A. (Inventor)

    2013-01-01

    A closed-loop control method for an electron beam freeform fabrication (EBF(sup 3)) process includes detecting a feature of interest during the process using a sensor(s), continuously evaluating the feature of interest to determine, in real time, a change occurring therein, and automatically modifying control parameters to control the EBF(sup 3) process. An apparatus provides closed-loop control method of the process, and includes an electron gun for generating an electron beam, a wire feeder for feeding a wire toward a substrate, wherein the wire is melted and progressively deposited in layers onto the substrate, a sensor(s), and a host machine. The sensor(s) measure the feature of interest during the process, and the host machine continuously evaluates the feature of interest to determine, in real time, a change occurring therein. The host machine automatically modifies control parameters to the EBF(sup 3) apparatus to control the EBF(sup 3) process in a closed-loop manner.

  3. Next Generation Molecular Histology Using Highly Multiplexed Ion Beam Imaging (MIBI) of Breast Cancer Tissue Specimens for Enhanced Clinical Guidance

    DTIC Science & Technology

    2016-07-01

    AWARD NUMBER: W81XWH- 14-1-0192 TITLE: Next-Generation Molecular Histology Using Highly Multiplexed Ion Beam Imaging (MIBI) of Breast Cancer...DATES COVERED 4. TITLE AND SUBTITLE Next-Generation Molecular Histology Using Highly Multiplexed Ion Beam Imaging (MIBI) of Breast Cancer Tissue

  4. Electron beam physical vapor deposition of YSZ electrolyte coatings for SOFCs

    NASA Astrophysics Data System (ADS)

    He, Xiaodong; Meng, Bin; Sun, Yue; Liu, Bochao; Li, Mingwei

    2008-09-01

    YSZ electrolyte coatings were prepared by electron beam physical vapor deposition (EB-PVD) at a high deposition rate of up to 1 μm/min. The YSZ coating consisted of a single cubic phase and no phase transformation occurred after annealing treatment at 1000 °C. A typical columnar structure was observed in this coating by SEM and feather-like characteristics appeared in every columnar grain. In columnar grain boundaries there were many micron-sized gaps and pores. In TEM image, many white lines were found, originating from the alignment of nanopores existing within feather-like columnar grains. The element distribution along the cross-section of the coating was homogeneous except Zr with a slight gradient. The coating exhibited a characteristic anisotropic behavior in electrical conductivity. In the direction perpendicular to coating surface the electrical conductivity was remarkably higher than that in the direction parallel to coating surface. This mainly attributed to the typical columnar structure for EB-PVD coating and the existence of many grain boundaries along the direction parallel to coating surface. For as-deposited coating, the gas permeability coefficient of 9.78 × 10 -5 cm 4 N -1 s -1 was obtained and this value was close to the critical value of YSZ electrolyte layer required for solid oxide fuel cell (SOFC) operation.

  5. Continuous all-optical deceleration of molecular beams and demonstration with Rb atoms

    NASA Astrophysics Data System (ADS)

    Long, Xueping; Jayich, Andrew; Campbell, Wesley

    2017-04-01

    Ultracold samples of molecules are desirable for a variety of applications, such as many-body physics, precision measurement and quantum information science. However, the pursuit of ultracold molecules has achieved limited success: spontaneous emission into many different dark states makes it hard to optically decelerate molecules to trappable speed. We propose to address this problem with a general optical deceleration technique that exploits a pump-dump pulse pair from a mode-locked laser. A molecular beam is first excited by a counter-propagating ``pump'' pulse. The molecular beam is then driven back to the initial ground state by a co-propagating ``dump'' pulse via stimulated emission. The delay between the pump and dump pulse is set to be shorter than the excited state lifetimes in order to limit decays to dark states. We report progress benchmarking this stimulated force by accelerating a cold sample of neutral Rb atoms.

  6. Investigation of vapor-deposited amorphous ice and irradiated ice by molecular dynamics simulation.

    PubMed

    Guillot, Bertrand; Guissani, Yves

    2004-03-01

    With the purpose of clarifying a number of points raised in the experimental literature, we investigate by molecular dynamics simulation the thermodynamics, the structure and the vibrational properties of vapor-deposited amorphous ice (ASW) as well as the phase transformations experienced by crystalline and vitreous ice under ion bombardment. Concerning ASW, we have shown that by changing the conditions of the deposition process, it is possible to form either a nonmicroporous amorphous deposit whose density (approximately 1.0 g/cm3) is essentially invariant with the temperature of deposition, or a microporous sample whose density varies drastically upon temperature annealing. We find that ASW is energetically different from glassy water except at the glass transition temperature and above. Moreover, the molecular dynamics simulation shows no evidence for the formation of a high-density phase when depositing water molecules at very low temperature. In order to model the processing of interstellar ices by cosmic ray protons and heavy ions coming from the magnetospheric radiation environment around the giant planets, we bombarded samples of vitreous ice and cubic ice with 35 eV water molecules. After irradiation the recovered samples were found to be densified, the lower the temperature, the higher the density of the recovered sample. The analysis of the structure and vibrational properties of this new high-density phase of amorphous ice shows a close relationship with those of high-density amorphous ice obtained by pressure-induced amorphization. Copyright 2004 American Institute of Physics

  7. Molecular Beam Mass Spectrometry With Tunable Vacuum Ultraviolet (VUV) Synchrotron Radiation

    PubMed Central

    Golan, Amir; Ahmed, Musahid

    2012-01-01

    Tunable soft ionization coupled to mass spectroscopy is a powerful method to investigate isolated molecules, complexes and clusters and their spectroscopy and dynamics1-4. Fundamental studies of photoionization processes of biomolecules provide information about the electronic structure of these systems. Furthermore determinations of ionization energies and other properties of biomolecules in the gas phase are not trivial, and these experiments provide a platform to generate these data. We have developed a thermal vaporization technique coupled with supersonic molecular beams that provides a gentle way to transport these species into the gas phase. Judicious combination of source gas and temperature allows for formation of dimers and higher clusters of the DNA bases. The focus of this particular work is on the effects of non-covalent interactions, i.e., hydrogen bonding, stacking, and electrostatic interactions, on the ionization energies and proton transfer of individual biomolecules, their complexes and upon micro-hydration by water1, 5-9. We have performed experimental and theoretical characterization of the photoionization dynamics of gas-phase uracil and 1,3-dimethyluracil dimers using molecular beams coupled with synchrotron radiation at the Chemical Dynamics Beamline10 located at the Advanced Light Source and the experimental details are visualized here. This allowed us to observe the proton transfer in 1,3-dimethyluracil dimers, a system with pi stacking geometry and with no hydrogen bonds1. Molecular beams provide a very convenient and efficient way to isolate the sample of interest from environmental perturbations which in return allows accurate comparison with electronic structure calculations11, 12. By tuning the photon energy from the synchrotron, a photoionization efficiency (PIE) curve can be plotted which informs us about the cationic electronic states. These values can then be compared to theoretical models and calculations and in turn, explain in

  8. Reversible wettability of electron-beam deposited indium-tin-oxide driven by ns-UV irradiation

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Persano, Luana; Center for Biomolecular Nanotechnologies UNILE, Istituto Italiano di Tecnologia, Via Barsanti, I-73010 Arnesano-LE; Del Carro, Pompilio

    2012-04-09

    Indium tin oxide (ITO) is one of the most widely used semiconductor oxides in the field of organic optoelectronics, especially for the realization of anode contacts. Here the authors report on the control of the wettability properties of ITO films deposited by reactive electron beam deposition and irradiated by means of nanosecond-pulsed UV irradiation. The enhancement of the surface water wettability, with a reduction of the water contact angle larger than 50 deg., is achieved by few tens of seconds of irradiation. The analyzed photo-induced wettability change is fully reversible in agreement with a surface-defect model, and it can bemore » exploited to realize optically transparent, conductive surfaces with controllable wetting properties for sensors and microfluidic circuits.« less

  9. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

    DOEpatents

    Brennan, T.M.; Hammons, B.E.; Tsao, J.Y.

    1992-12-15

    A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth. 3 figs.

  10. Ultra high resolution molecular beam cars spectroscopy with application to planetary atmospheric molecules

    NASA Technical Reports Server (NTRS)

    Byer, R. L.

    1982-01-01

    The measurement of high resolution pulsed and continuous wave (CW) coherent anti-Stokes Raman spectroscopy (CARS) measurements in pulsed and steady state supersonic expansions were demonstrated. Pulsed molecular beam sources were characterized, and saturation of a Raman transition and, for the first time, the Raman spectrum of a complex molecular cluster were observed. The observation of CW CARS spectra in a molecular expansion and the effects of transit time broadening is described. Supersonic expansion is established as a viable technique for high resolution Raman spectroscopy of cold molecules with resolutions of 100 MH2.

  11. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

    DOEpatents

    Brennan, Thomas M.; Hammons, B. Eugene; Tsao, Jeffrey Y.

    1992-01-01

    A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.

  12. High aspect ratio AFM Probe processing by helium-ion-beam induced deposition.

    PubMed

    Onishi, Keiko; Guo, Hongxuan; Nagano, Syoko; Fujita, Daisuke

    2014-11-01

    A Scanning Helium Ion Microscope (SHIM) is a high resolution surface observation instrument similar to a Scanning Electron Microscope (SEM) since both instruments employ finely focused particle beams of ions or electrons [1]. The apparent difference is that SHIMs can be used not only for a sub-nanometer scale resolution microscopic research, but also for the applications of very fine fabrication and direct lithography of surfaces at the nanoscale dimensions. On the other hand, atomic force microscope (AFM) is another type of high resolution microscopy which can measure a three-dimensional surface morphology by tracing a fine probe with a sharp tip apex on a specimen's surface.In order to measure highly uneven and concavo-convex surfaces by AFM, the probe of a high aspect ratio with a sharp tip is much more necessary than the probe of a general quadrangular pyramid shape. In this paper we report the manufacture of the probe tip of the high aspect ratio by ion-beam induced gas deposition using a nanoscale helium ion beam of SHIM.Gas of platinum organic compound was injected into the sample surface neighborhood in the vacuum chamber of SHIM. The decomposition of the gas and the precipitation of the involved metal brought up a platinum nano-object in a pillar shape on the normal commercial AFM probe tip. A SHIM system (Carl Zeiss, Orion Plus) equipped with the gas injection system (OmniProbe, OmniGIS) was used for the research. While the vacuum being kept to work, we injected platinum organic compound ((CH3)3(CH3C5H4)Pt) into the sample neighborhood and irradiated the helium ion beam with the shape of a point on the apex of the AFM probe tip. It is found that we can control the length of the Pt nano-pillar by irradiation time of the helium ion beam. The AFM probe which brought up a Pt nano-pillar is shown in Figure 1. It is revealed that a high-aspect-ratio Pt nano-pillar of ∼40nm diameter and up to ∼2000 nm length can be grown. In addition, for possible heating

  13. InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.

    PubMed

    Natrella, Michele; Rouvalis, Efthymios; Liu, Chin-Pang; Liu, Huiyun; Renaud, Cyril C; Seeds, Alwyn J

    2012-08-13

    We report the first InGaAsP-based uni-travelling carrier photodiode structure grown by Solid Source Molecular Beam Epitaxy; the material contains layers of InGaAsP as thick as 300 nm and a 120 nm thick InGaAs absorber. Large area vertically illuminated test devices have been fabricated and characterised; the devices exhibited 0.1 A/W responsivity at 1550 nm, 12.5 GHz -3 dB bandwidth and -5.8 dBm output power at 10 GHz for a photocurrent of 4.8 mA. The use of Solid Source Molecular Beam Epitaxy enables the major issue associated with the unintentional diffusion of zinc in Metal Organic Vapour Phase Epitaxy to be overcome and gives the benefit of the superior control provided by MBE growth techniques without the costs and the risks of handling toxic gases of Gas Source Molecular Beam Epitaxy.

  14. Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide

    DOEpatents

    Feng, Tom; Ghosh, Amal K.

    1979-01-01

    In preparing tin oxide and indium tin oxide-silicon heterojunction solar cells by electron beam sublimation of the oxide and subsequent deposition thereof on the silicon, the engineering efficiency of the resultant cell is enhanced by depositing the oxide at a predetermined favorable angle of incidence. Typically the angle of incidence is between 40.degree. and 70.degree. and preferably between 55.degree. and 65.degree. when the oxide is tin oxide and between 40.degree. and 70.degree. when the oxide deposited is indium tin oxide. gi The Government of the United States of America has rights in this invention pursuant to Department of Energy Contract No. EY-76-C-03-1283.

  15. Towards an electro-magnetic field separation of deposited material implemented in an ion beam sputter process

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Malobabic, Sina; Jupe, Marco; Ristau, Detlev

    Nowadays, Ion Beam Sputter (IBS) processes are very well optimized on an empirical basis. To achieve further progresses, a modification of the IBS process by guiding the coating material using an axial magnetic field and an additional electrical field has been studied. The electro-magnetic (EM) field leads to a significant change in plasma properties and deposition rate distributions, whereas an increase in deposition rate along the centerline of the axial EM field around 150% was observed. These fundamental studies on the prototype are the basis for the development of an applicable and workable design of a separation device.

  16. Kinetic Transition of Crystal Morphology from Nanoparticles to Dendrites during Electron Beam Induced Deposition of Gold

    NASA Astrophysics Data System (ADS)

    Park, Jeung Hun; Schneider, Nicholas; Bau, Haim; Kodambaka, Suneel; Ross, Frances

    2015-03-01

    We studied the kinetic transition from compact nanoparticle to dendritic morphology during electron beam-induced Au deposition using in situ liquid cell-based transmission electron microcopy. Radiolysis of water by electrons generates radicals and molecular species. Hydrated electrons and hydrogen and hydroxide radicals can act as reducing agents and initiate the reduction of the water-soluble precursor, HAuCl4, resulting in the precipitation of Au as nanostructures. We tracked nucleation, growth, and morphological transition of Au from movies recorded in situ, as a function of irradiated dose and liquid thickness. We identified several distinct regimes that depend on the irradiation time: (1) nucleation; (2) linear volumetric growth; (3) formation of dendritic structures; (4) coalescence and dissolution. A diffusion and reaction model for the radiolytic species and metal ions in the confined geometry of the irradiated volume is used to understand the nucleation sites and morphological transitions. We finally describe how nanoparticles can be made to grow in a stepwise manner by switching the supply of Au ions on and off electrochemically, and discuss possibilities for creating more complex nanostructures. This research was partially funded by the National Science Foundation (DMR-1310639, CMMI-1129722, and CBET-1066573).

  17. Principles and Design of a Zeeman–Sisyphus Decelerator for Molecular Beams

    PubMed Central

    Tarbutt, M. R.

    2016-01-01

    Abstract We explore a technique for decelerating molecules using a static magnetic field and optical pumping. Molecules travel through a spatially varying magnetic field and are repeatedly pumped into a weak‐field seeking state as they move towards each strong field region, and into a strong‐field seeking state as they move towards weak field. The method is time‐independent and so is suitable for decelerating both pulsed and continuous molecular beams. By using guiding magnets at each weak field region, the beam can be simultaneously guided and decelerated. By tapering the magnetic field strength in the strong field regions, and exploiting the Doppler shift, the velocity distribution can be compressed during deceleration. We develop the principles of this deceleration technique, provide a realistic design, use numerical simulations to evaluate its performance for a beam of CaF, and compare this performance to other deceleration methods. PMID:27629547

  18. Three-dimensional ordering of cold ion beams in a storage ring: A molecular-dynamics simulation study

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yuri, Yosuke, E-mail: yuri.yosuke@jaea.go.jp

    Three-dimensional (3D) ordering of a charged-particle beams circulating in a storage ring is systematically studied with a molecular-dynamics simulation code. An ion beam can exhibit a 3D ordered configuration at ultralow temperature as a result of powerful 3D laser cooling. Various unique characteristics of the ordered beams, different from those of crystalline beams, are revealed in detail, such as the single-particle motion in the transverse and longitudinal directions, and the dependence of the tune depression and the Coulomb coupling constant on the operating points.

  19. Low-Volatility Model Demonstrates Humidity Affects Environmental Toxin Deposition on Plastics at a Molecular Level.

    PubMed

    Hankett, Jeanne M; Collin, William R; Yang, Pei; Chen, Zhan; Duhaime, Melissa

    2016-02-02

    Despite the ever-increasing prevalence of plastic debris and endocrine disrupting toxins in aquatic ecosystems, few studies describe their interactions in freshwater environments. We present a model system to investigate the deposition/desorption behaviors of low-volatility lake ecosystem toxins on microplastics in situ and in real time. Molecular interactions of gas-phase nonylphenols (NPs) with the surfaces of two common plastics, poly(styrene) and poly(ethylene terephthalate), were studied using quartz crystal microbalance and sum frequency generation vibrational spectroscopy. NP point sources were generated under two model environments: plastic on land and plastic on a freshwater surface. We found the headspace above calm water provides an excellent environment for NP deposition and demonstrate significant NP deposition on plastic within minutes at relevant concentrations. Further, NP deposits and orders differently on both plastics under humid versus dry environments. We attributed the unique deposition behaviors to surface energy changes from increased water content during the humid deposition. Lastly, nanograms of NP remained on microplastic surfaces hours after initial NP introduction and agitating conditions, illustrating feasibility for plastic-bound NPs to interact with biota and surrounding matter. Our model studies reveal important interactions between low-volatility environmental toxins and microplastics and hold potential to correlate the environmental fate of endocrine disrupting toxins in the Great Lakes with molecular behaviors.

  20. Supersonic Molecular Beam Optical Stark Spectroscopy of MnH.

    NASA Astrophysics Data System (ADS)

    Gengler, Jamie; Ma, Tongmei; Harrison, Jeremy; Steimle, Timothy

    2006-03-01

    The large moment of inertia, large magnetic moment, and possible large permanent electric dipole moment of manganese monohydride, MnH, makes it a prime candidate for ultra-cold molecule production via Stark deceleration and magnetic trapping. Here we report the first molecular beam production of MnH and the analysis of the Stark effect in the (0,0) A^7 π -- X^ 7σ^+ band. The sample was prepared by laser ablation of solid Mn in an H2 supersonic expansion. The low rotational temperature (<50 K) and near natural linewidth resolution (˜50 MHz) facilitated analysis of the ^55Mn (I=5/2) and ^1H (I=1/2) hyperfine structure. A comparison of the derived field-free parameters with those obtained from sub- Doppler optical measurements will be made. Progress on the analysis of the Stark effect will be given. J.R. Bochinski, E.R. Hudson, H.J. Lewandowski, and J. Ye, Phys. Rev. A 70, 043410 (2004). S.Y.T. van de Meerakker, R.T. Jongma, H.L. Bethlem, and G. Meijer, Phys. Rev. A 64, 041401(R) (2001) report the first molecular beam production of MnH and the analysis of T.D. Varberg, J.A. Gray, R.W. Field, and A.J. Merer, J. Mol. Spec. 156, 296-318 (1992). I.E. Gordon, D.R.T. Appadoo, A. Shayesteh, K.A. Walker, and P.F. Bernath, J. Mol. Spec., 229, 145-149 (2005).

  1. Characterization of nano-porosity in molecular layer deposited films.

    PubMed

    Perrotta, Alberto; Poodt, Paul; van den Bruele, F J Fieke; Kessels, W M M Erwin; Creatore, Mariadriana

    2018-06-12

    Molecular layer deposition (MLD) delivers (ultra-) thin organic and hybrid materials, with atomic-level thickness control. However, such layers are often reported to be unstable under ambient conditions, due to the interaction of water and oxygen with the hybrid structure, consequently limiting their applications. In this contribution, we investigate the impact of porosity in MLD layers on their degradation. Alucone layers were deposited by means of trimethylaluminium and ethylene glycol, adopting both temporal and spatial MLD and characterized by means of FT-IR spectroscopy, spectroscopic ellipsometry, and ellipsometric porosimetry. The highest growth per cycle (GPC) achieved by spatial MLD resulted in alucone layers with very low stability in ambient air, leading to their conversion to AlOx. Alucones deposited by means of temporal MLD, instead, showed a lower GPC and a higher ambient stability. Ellipsometric porosimetry showed the presence of open nano-porosity in pristine alucone layers. Pores with a diameter in the range of 0.42-2 nm were probed, with a relative content between 1.5% and 5%, respectively, which are attributed to the temporal and spatial MLD layers. We concluded that a correlation exists between the process GPC, the open-porosity relative content, and the degradation of alucone layers.

  2. A molecular beam/quadrupole mass spectrometer system with synchronized beam modulation and digital waveform analysis

    NASA Technical Reports Server (NTRS)

    Pellett, G. L.; Adams, B. R.

    1983-01-01

    A performance evaluation is conducted for a molecular beam/mass spectrometer (MB/MS) system, as applied to a 1-30 torr microwave-discharge flow reactor (MWFR) used in the formation of the methylperoxy radical and a study of its subsequent destruction in the presence or absence of NO(x). The modulated MB/MS system is four-staged and differentially pumped. The results obtained by the MWFR study is illustrative of overall system performance, including digital waveform analysis; significant improvements over previous designs are noted in attainable S/N ratio, detection limit, and accuracy.

  3. Correlation of process parameters and properties of TiO2 films grown by ion beam sputter deposition from a ceramic target

    NASA Astrophysics Data System (ADS)

    Bundesmann, Carsten; Lautenschläge, Thomas; Spemann, Daniel; Finzel, Annemarie; Mensing, Michael; Frost, Frank

    2017-10-01

    The correlation between process parameters and properties of TiO2 films grown by ion beam sputter deposition from a ceramic target was investigated. TiO2 films were grown under systematic variation of ion beam parameters (ion species, ion energy) and geometrical parameters (ion incidence angle, polar emission angle) and characterized with respect to film thickness, growth rate, structural properties, surface topography, composition, optical properties, and mass density. Systematic variations of film properties with the scattering geometry, namely the scattering angle, have been revealed. There are also considerable differences in film properties when changing the process gas from Ar to Xe. Similar systematics were reported for TiO2 films grown by reactive ion beam sputter deposition from a metal target [C. Bundesmann et al., Appl. Surf. Sci. 421, 331 (2017)]. However, there are some deviations from the previously reported data, for instance, in growth rate, mass density and optical properties.

  4. Silicon spikes and impurity accumulation at interrupted growth interfaces during molecular-beam epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    SpringThorpe, A.J.; Moore, W.T.; Majeed, A.

    1993-07-01

    Recent proposals by Wood and Wilson, to explain the formation of impurity spikes at substrate/epitaxial layer interfaces in GaAs prepared by molecular-beam epitaxy (MBE), have been experimentally investigated. Their suggestion that the spikes form due to suboxide transport via reactions that involve the As{sub 2}O{sub 3} released from the substrate during oxide desorption and hot Knudsen cells, is not supported by the experimental data. The same authors have also speculated that there may be significant flux leakage from nominally closed cells. For this to occur, reflection and scattering of flux by inadequately cooled cryoshroud baffle surfaces are necessary. Secondary ionmore » mass spectrometry analyses of interfaces, at which the growth of GaAs and AlAs was interrupted for times up to 30 min, confirm that this takes place. However, flux leakage is only found to be significant for the high vapor pressure group III elements. For these elements, incorporation levels in the range 0.02%-0.1% are found under normal deposition conditions. These results suggest that careful attention should be given to increasing the internal MBE system baffling in order to eliminate cross contamination problems. 14 refs., 2 figs., 1 tab.« less

  5. Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Park, Yeonjoon; Cich, Michael J.; Zhao, Rian

    2000-05-01

    The formation of twin is common during GaAs(111) and GaN(0001) molecular beam epitaxy (MBE) metalorganic chemical vapor deposition growth. A stacking fault in the zinc-blende (ZB)(111) direction can be described as an insertion of one monolayer of wurtzite structure, sandwiched between two ZB structures that have been rotated 60 degree sign along the growth direction. GaAs(111)A/B MBE growth within typical growth temperature regimes is complicated by the formation of pyramidal structures and 60 degree sign rotated twins, which are caused by faceting and stacking fault formation. Although previous studies have revealed much about the structure of these twins, a well-establishedmore » simple nondestructive characterization method which allows the measurement of total aerial density of the twins does not exist at present. In this article, the twin density of AlGaAs layers grown on 1 degree sign miscut GaAs(111)B substrates has been measured using high resolution x-ray diffraction, and characterized with a combination of Nomarski microscopy, atomic force microscopy, and transmission electron microscopy. These comparisons permit the relationship between the aerial twin density and the growth condition to be determined quantitatively. (c) 2000 American Vacuum Society.« less

  6. Calculation of energy-deposition distributions and microdosimetric estimation of the biological effect of a 9C beam.

    PubMed

    Mancusi, Davide; Sihver, Lembit; Niita, Koji; Li, Qiang; Sato, Tatsuhiko; Iwase, Hiroshi; Iwamoto, Yosuke; Matsuda, Norihiro; Sakamoto, Yukio; Nakashima, Hiroshi

    2009-04-01

    Among the alternative beams being recently considered for external cancer radiotherapy, (9)C has received some attention because it is expected that its biological effectiveness could be boosted by the beta-delayed emission of two alpha particles and a proton that takes place at the ion-stopping site. Experiments have been performed to characterise this exotic beam physically and models have been developed to estimate quantitatively its biological effect. Here, the particle and heavy-ion transport code system ( PHITS ) is used to calculate energy-deposition and linear energy transfer distributions for a (9)C beam in water and the results are compared with published data. Although PHITS fails to reproduce some of the features of the distributions, it suggests that the decay of (9)C contributes negligibly to the energy-deposition distributions, thus contradicting the previous interpretation of the measured data. We have also performed a microdosimetric calculation to estimate the biological effect of the decay, which was found to be negligible; previous microdosimetric Monte-Carlo calculations were found to be incorrect. An analytical argument, of geometrical nature, confirms this conclusion and gives a theoretical upper bound on the additional biological effectiveness of the decay. However, no explanation can be offered at present for the observed difference in the biological effectiveness between (9)C and (12)C; the reproducibility of this surprising result will be verified in coming experiments.

  7. Gold diffusion in mercury cadmium telluride grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Selamet, Yusuf; Singh, Rasdip; Zhao, Jun; Zhou, Yong D.; Sivananthan, Sivalingam; Dhar, Nibir K.

    2003-12-01

    The growth and characterization of Au-doped HgCdTe layers on (211)B CdTe/Si substrates grown by molecular beam epitaxy reported. The electrical properties of these layers studied for diffusion are presented. For ex-situ experiments, thin Au layers were deposited by evaporation and annealed at various temperatures and times to investigate the p-type doping properties and diffusion of Au in HgCdTe. The atomic distribution of the diffused Au was determined by secondary ion mass spectroscopy. We found clear evidence for p-type doping of HgCdTe:Au by in-situ and ex-situ methods. For in-situ doped layers, we found that, the Au cell temperature needs to be around 900°C to get p-type behavior. The diffusion coefficient of Au in HgCdTe was calculated by fitting SIMS profiles after annealing. Both complementary error functions and gaussian fittings were used, and were in full agreement. Diffusion coefficient as low as 8x10-14cm2/s observed for a sample annealed at 250°C and slow component of a diffusion coefficient as low as 2x10-15 cm2/s observed for a sample annealed at 300°C. Our preliminary results indicate no appreciable diffusion of Au in HgCdTe under the conditions used in these studies. Further work is in progress to confirm these results and to quantify our SIMS profiles.

  8. Neutral beam dump with cathodic arc titanium gettering

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Smirnov, A.; Korepanov, S. A.; Putvinski, S.

    An incomplete neutral beam capture can degrade the plasma performance in neutral beam driven plasma machines. The beam dumps mitigating the shine-through beam recycling must entrap and retain large particle loads while maintaining the beam-exposed surfaces clean of the residual impurities. The cathodic arc gettering, which provides high evaporation rate coupled with a fast time response, is a powerful and versatile technique for depositing clean getter films in vacuum. A compact neutral beam dump utilizing the titanium arc gettering was developed for a field-reversed configuration plasma sustained by 1 MW, 20-40 keV neutral hydrogen beams. The titanium evaporator features amore » new improved design. The beam dump is capable of handling large pulsed gas loads, has a high sorption capacity, and is robust and reliable. With the beam particle flux density of 5 x 10{sup 17} H/(cm{sup 2}s) sustained for 3-10 ms, the beam recycling coefficient, defined as twice the ratio of the hydrogen molecular flux leaving the beam dump to the incident flux of high-energy neutral atoms, is {approx}0.7. The use of the beam dump allows us to significantly reduce the recycling of the shine-through neutral beam as well as to improve the vacuum conditions in the machine.« less

  9. Investigation of the silicon ion density during molecular beam epitaxy growth

    NASA Astrophysics Data System (ADS)

    Eifler, G.; Kasper, E.; Ashurov, Kh.; Morozov, S.

    2002-05-01

    Ions impinging on a surface during molecular beam epitaxy influence the growth and the properties of the growing layer, for example, suppression of dopant segregation and the generation of crystal defects. The silicon electron gun in the molecular beam epitaxy (MBE) equipment is used as a source for silicon ions. To use the effect of ion bombardment the mechanism of generation and distribution of ions was investigated. A monitoring system was developed and attached at the substrate position in the MBE growth chamber to measure the ion and electron densities towards the substrate. A negative voltage was applied to the substrate to modify the ion energy and density. Furthermore the current caused by charge carriers impinging on the substrate was measured and compared with the results of the monitoring system. The electron and ion densities were measured by varying the emission current of the e-gun achieving silicon growth rates between 0.07 and 0.45 nm/s and by changing the voltage applied to the substrate between 0 to -1000 V. The dependencies of ion and electron densities were shown and discussed within the framework of a simple model. The charged carrier densities measured with the monitoring system enable to separate the ion part of the substrate current and show its correlation to the generation rate. Comparing the ion density on the whole substrate and in the center gives a hint to the ion beam focusing effect. The maximum ion and electron current densities obtained were 0.40 and 0.61 μA/cm2, respectively.

  10. Crossed Molecular Beam Studies and Dynamics of Decomposition of Chemically Activated Radicals

    DOE R&D Accomplishments Database

    Lee, Y. T.

    1973-09-01

    The power of the crossed molecular beams method in the investigation of the dynamics of chemical reactions lies mainly in the direct observation of the consequences of single collisions of well controlled reactant molecules. The primary experimental observations which provide information on reaction dynamics are the measurements of angular and velocity distributions of reaction products.

  11. The role of phase separation for self-organized surface pattern formation by ion beam erosion and metal atom co-deposition

    NASA Astrophysics Data System (ADS)

    Hofsäss, H.; Zhang, K.; Pape, A.; Bobes, O.; Brötzmann, M.

    2013-05-01

    We investigate the ripple pattern formation on Si surfaces at room temperature during normal incidence ion beam erosion under simultaneous deposition of different metallic co-deposited surfactant atoms. The co-deposition of small amounts of metallic atoms, in particular Fe and Mo, is known to have a tremendous impact on the evolution of nanoscale surface patterns on Si. In previous work on ion erosion of Si during co-deposition of Fe atoms, we proposed that chemical interactions between Fe and Si atoms of the steady-state mixed Fe x Si surface layer formed during ion beam erosion is a dominant driving force for self-organized pattern formation. In particular, we provided experimental evidence for the formation of amorphous iron disilicide. To confirm and generalize such chemical effects on the pattern formation, in particular the tendency for phase separation, we have now irradiated Si surfaces with normal incidence 5 keV Xe ions under simultaneous gracing incidence co-deposition of Fe, Ni, Cu, Mo, W, Pt, and Au surfactant atoms. The selected metals in the two groups (Fe, Ni, Cu) and (W, Pt, Au) are very similar regarding their collision cascade behavior, but strongly differ regarding their tendency to silicide formation. We find pronounced ripple pattern formation only for those co deposited metals (Fe, Mo, Ni, W, and Pt), which are prone to the formation of mono and disilicides. In contrast, for Cu and Au co-deposition the surface remains very flat, even after irradiation at high ion fluence. Because of the very different behavior of Cu compared to Fe, Ni and Au compared to W, Pt, phase separation toward amorphous metal silicide phases is seen as the relevant process for the pattern formation on Si in the case of Fe, Mo, Ni, W, and Pt co-deposition.

  12. A study on the radiation resistance of CdWO4 thin-film scintillators deposited by using an electron-beam physical vapor deposition method

    NASA Astrophysics Data System (ADS)

    Park, Seyong; Yoon, Young Soo

    2016-09-01

    In this paper, we report the first successful fabrication of CdWO4 thin film scintillators deposited on quartz glass substrates by using an electron-beam physical vapor deposition method. The films were dense, uniform, and crack-free. CdWO4 thin-film samples of varying thicknesses were investigated by using structural and optical characterization techniques. An optimized thickness for the CdWO4 thin-film scintillators was discovered. The scintillation and the optical properties were found to depend strongly on the annealing process. The annealing process resulted in thin films with a distinct crystal structure and with improved transparency and scintillation properties. For potential applications in gamma-ray energy storage systems, photoluminescence measurements were performed using gamma rays at a dose rate of 10 kGy h-1.

  13. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    PubMed

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

  14. Monte Carlo simulation of energy deposition by low-energy electrons in molecular hydrogen

    NASA Technical Reports Server (NTRS)

    Heaps, M. G.; Furman, D. R.; Green, A. E. S.

    1975-01-01

    A set of detailed atomic cross sections has been used to obtain the spatial deposition of energy by 1-20-eV electrons in molecular hydrogen by a Monte Carlo simulation of the actual trajectories. The energy deposition curve (energy per distance traversed) is quite peaked in the forward direction about the entry point for electrons with energies above the threshold of the electronic states, but the peak decreases and broadens noticeably as the electron energy decreases below 10 eV (threshold for the lowest excitable electronic state of H2). The curve also assumes a very symmetrical shape for energies below 10 eV, indicating the increasing importance of elastic collisions in determining the shape of the curve, although not the mode of energy deposition.

  15. Note: A short-pulse high-intensity molecular beam valve based on a piezoelectric stack actuator

    NASA Astrophysics Data System (ADS)

    Abeysekera, Chamara; Joalland, Baptiste; Shi, Yuanyuan; Kamasah, Alexander; Oldham, James M.; Suits, Arthur G.

    2014-11-01

    Solenoid and piezoelectric disk valves, which are widely used to generate molecular beam pulses, still suffer from significant restrictions, such as pulse durations typically >50 μs, low repetition rates, and limited gas flows and operational times. Much of this arises owing to the limited forces these actuators can achieve. To overcome these limitations, we have developed a new pulsed valve based on a high-force piezoelectric stack actuator. We show here that operation with pulse durations as low as 20 μs and repetition rates up to 100 Hz can be easily achieved by operating the valve in conjunction with a commercial fast high-voltage switch. We outline our design and demonstrate its performance with molecular beam characterization via velocity map ion imaging.

  16. Note: a short-pulse high-intensity molecular beam valve based on a piezoelectric stack actuator.

    PubMed

    Abeysekera, Chamara; Joalland, Baptiste; Shi, Yuanyuan; Kamasah, Alexander; Oldham, James M; Suits, Arthur G

    2014-11-01

    Solenoid and piezoelectric disk valves, which are widely used to generate molecular beam pulses, still suffer from significant restrictions, such as pulse durations typically >50 μs, low repetition rates, and limited gas flows and operational times. Much of this arises owing to the limited forces these actuators can achieve. To overcome these limitations, we have developed a new pulsed valve based on a high-force piezoelectric stack actuator. We show here that operation with pulse durations as low as 20 μs and repetition rates up to 100 Hz can be easily achieved by operating the valve in conjunction with a commercial fast high-voltage switch. We outline our design and demonstrate its performance with molecular beam characterization via velocity map ion imaging.

  17. Simultaneous Power Deposition Detection of Two EC Beams with the BIS Analysis in Moving TCV Plasmas

    NASA Astrophysics Data System (ADS)

    Curchod, L.; Pochelon, A.; Decker, J.; Felici, F.; Goodman, T. P.; Moret, J.-M.; Paley, J. I.

    2009-11-01

    Modulation of power amplitude is a widespread to determine the radial absorption profile of externally launched power in fusion plasmas. There are many techniques to analyze the plasma response to such a modulation. The break-in-slope (BIS) analysis can draw an estimated power deposition profile for each power step up. In this paper, the BIS analysis is used to monitor the power deposition location of one or two EC power beams simultaneously in a non-stationary plasma being displaced vertically in the TCV tokamak vessel. Except from radial discrepancies, the results have high time resolution and compare well with simulations from the R2D2-C3PO-LUKE ray-tracing and Fokker-Planck code suite.

  18. Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility

    PubMed Central

    2011-01-01

    Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C) and high (≳600°C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts--pyramids and wedges-- are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001) surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature. PMID:21892938

  19. Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility.

    PubMed

    Yuryev, Vladimir A; Arapkina, Larisa V

    2011-09-05

    Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C) and high (≳600°C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts--pyramids and wedges-- are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001) surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature.

  20. Electron beam physical vapor deposition of thin ruby films for remote temperature sensing

    NASA Astrophysics Data System (ADS)

    Li, Wei; Coppens, Zachary J.; Greg Walker, D.; Valentine, Jason G.

    2013-04-01

    Thermographic phosphors (TGPs) possessing temperature-dependent photoluminescence properties have a wide range of uses in thermometry due to their remote access and large temperature sensitivity range. However, in most cases, phosphors are synthesized in powder form, which prevents their use in high resolution micro and nanoscale thermal microscopy. In the present study, we investigate the use of electron beam physical vapor deposition to fabricate thin films of chromium-doped aluminum oxide (Cr-Al2O3, ruby) thermographic phosphors. Although as-deposited films were amorphous and exhibited weak photoluminescence, the films regained the stoichiometry and α-Al2O3 crystal structure of the combustion synthesized source powder after thermal annealing. As a consequence, the annealed films exhibit both strong photoluminescence and a temperature-dependent lifetime that decreases from 2.9 ms at 298 K to 2.1 ms at 370 K. Ruby films were also deposited on multiple substrates. To ensure a continuous film with smooth surface morphology and strong photoluminescence, we use a sapphire substrate, which is thermal expansion coefficient and lattice matched to the film. These thin ruby films can potentially be used as remote temperature sensors for probing the local temperatures of micro and nanoscale structures.

  1. Ion beam sputtering of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Sovey, J. S.

    1978-01-01

    Etching and deposition of fluoropolymers are of considerable industrial interest for applications dealing with adhesion, chemical inertness, hydrophobicity, and dielectric properties. This paper describes ion beam sputter processing rates as well as pertinent characteristics of etched targets and films. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Also presented are sputter target and film characteristics which were documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs.

  2. Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Slobodskyy, T.; Ruester, C.; Fiederling, R.

    2004-12-20

    We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by Nomarski and scanning electron microscopy. Optical properties of (Zn,Mn)Se have been studied by photoluminescence and a giant Zeeman splitting of up to 30 meV has been observed. Our observations indicate a high crystalline quality of the epitaxial films.

  3. Optimization of the Nonradiative Lifetime of Molecular-Beam-Epitaxy (MBE)-Grown Undoped GaAs/AlGaAs Double Heterostructures (DH)

    DTIC Science & Technology

    2013-09-01

    Optimization of the Nonradiative Lifetime of Molecular- Beam-Epitaxy (MBE)-Grown Undoped GaAs/AlGaAs Double Heterostructures (DH) by P...it to the originator. Army Research Laboratory Adelphi, MD 20783-1197 ARL-TR-6660 September 2013 Optimization of the Nonradiative ...REPORT TYPE Final 3. DATES COVERED (From - To) FY2013 4. TITLE AND SUBTITLE Optimization of the Nonradiative Lifetime of Molecular-Beam-Epitaxy

  4. Some interesting aspects of physisorption stay-time measurements obtained using molecular-beam techniques. [on Ni surface

    NASA Technical Reports Server (NTRS)

    Wilmoth, R. G.; Fisher, S. S.

    1974-01-01

    Stay-time distributions have been obtained for Xe physisorbing on polycrystalline nickel as a function of the target temperature using a pulsed molecular-beam technique. Some interesting effects due to ion bombardment of the surface using He, Ar, and Xe ions are presented. Measured detector signal shapes are found to deviate from those predicted for first-order desorption with velocities corresponding to Maxwellian effusion at the surface temperature. Evidence is found for interaction between beam pulse adsorption and steady-state adsorption of beam species background atoms.

  5. Dynamic modulation of electronic properties of graphene by localized carbon doping using focused electron beam induced deposition

    NASA Astrophysics Data System (ADS)

    Kim, S.; Russell, M.; Henry, M.; Kim, S. S.; Naik, R. R.; Voevodin, A. A.; Jang, S. S.; Tsukruk, V. V.; Fedorov, A. G.

    2015-09-01

    We report on the first demonstration of controllable carbon doping of graphene to engineer local electronic properties of a graphene conduction channel using focused electron beam induced deposition (FEBID). Electrical measurements indicate that an ``n-p-n'' junction on graphene conduction channel is formed by partial carbon deposition near the source and drain metal contacts by low energy (<50 eV) secondary electrons due to inelastic collisions of long range backscattered primary electrons generated from a low dose of high energy (25 keV) electron beam (1 × 1018 e- per cm2). Detailed AFM imaging provides direct evidence of the new mechanism responsible for dynamic evolution of the locally varying graphene doping. The FEBID carbon atoms, which are physisorbed and weakly bound to graphene, diffuse towards the middle of graphene conduction channel due to their surface chemical potential gradient, resulting in negative shift of Dirac voltage. Increasing a primary electron dose to 1 × 1019 e- per cm2 results in a significant increase of carbon deposition, such that it covers the entire graphene conduction channel at high surface density, leading to n-doping of graphene channel. Collectively, these findings establish a unique capability of FEBID technique to dynamically modulate the doping state of graphene, thus enabling a new route to resist-free, ``direct-write'' functional patterning of graphene-based electronic devices with potential for on-demand re-configurability.We report on the first demonstration of controllable carbon doping of graphene to engineer local electronic properties of a graphene conduction channel using focused electron beam induced deposition (FEBID). Electrical measurements indicate that an ``n-p-n'' junction on graphene conduction channel is formed by partial carbon deposition near the source and drain metal contacts by low energy (<50 eV) secondary electrons due to inelastic collisions of long range backscattered primary electrons generated

  6. Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy.

    PubMed

    Fahed, M; Desplanque, L; Coinon, C; Troadec, D; Wallart, X

    2015-07-24

    The impact of the P/In flux ratio and the deposited thickness on the faceting of InP nanostructures selectively grown by molecular beam epitaxy (MBE) is reported. Homoepitaxial growth of InP is performed inside 200 nm wide stripe openings oriented either along a [110] or [1-10] azimuth in a 10 nm thick SiO2 film deposited on an InP(001) substrate. When varying the P/In flux ratio, no major shape differences are observed for [1-10]-oriented apertures. On the other hand, the InP nanostructure cross sections strongly evolve for [110]-oriented apertures for which (111)B facets are more prominent and (001) ones shrink for large P/In flux ratio values. These results show that the growth conditions allow tailoring the nanocrystal shape. They are discussed in the framework of the equilibrium crystal shape model using existing theoretical calculations of the surface energies of different low-index InP surfaces as a function of the phosphorus chemical potential, directly related to the P/In ratio. Experimental observations strongly suggest that the relative (111)A surface energy is probably smaller than the calculated value. We also discuss the evolution of the nanostructure shape with the InP-deposited thickness.

  7. Proposed Molecular Beam Determination of Energy Partition in the Photodissociation of Polyatomic Molecules

    DOE R&D Accomplishments Database

    Zare, P. N.; Herschbach, D. R.

    1964-01-29

    Conventional photochemical experiments give no information about the partitioning of energy between translational recoil and internal excitation of the fragment molecules formed in photodissociation of a polyatomic molecule. In a molecular beam experiment, it becomes possible to determine the energy partition from the form of the laboratory angular distribution of one of the photodissociation products. A general kinematic analysis is worked out in detail, and the uncertainty introduced by the finite angular resolution of the apparatus and the velocity spread in the parent beam is examined. The experimental requirements are evaluated for he photolysis of methyl iodide by the 2537 angstrom Hg line.

  8. Energy deposition evaluation for ultra-low energy electron beam irradiation systems using calibrated thin radiochromic film and Monte Carlo simulations.

    PubMed

    Matsui, S; Mori, Y; Nonaka, T; Hattori, T; Kasamatsu, Y; Haraguchi, D; Watanabe, Y; Uchiyama, K; Ishikawa, M

    2016-05-01

    For evaluation of on-site dosimetry and process design in industrial use of ultra-low energy electron beam (ULEB) processes, we evaluate the energy deposition using a thin radiochromic film and a Monte Carlo simulation. The response of film dosimeter was calibrated using a high energy electron beam with an acceleration voltage of 2 MV and alanine dosimeters with uncertainty of 11% at coverage factor 2. Using this response function, the results of absorbed dose measurements for ULEB were evaluated from 10 kGy to 100 kGy as a relative dose. The deviation between the responses of deposit energy on the films and Monte Carlo simulations was within 15%. As far as this limitation, relative dose estimation using thin film dosimeters with response function obtained by high energy electron irradiation and simulation results is effective for ULEB irradiation processes management.

  9. Improvement of silicon solar cell efficiency by ion beam sputtered deposition of AlOxNy thin films.

    PubMed

    Chen, Sheng-Hui; Hsu, Chun-Che; Wang, Hsuan-Wen; Yeh, Chi-Li; Tseng, Shao-Ze; Lin, Hung-Ju; Lee, Cheng-Chung; Peng, Cheng-Yu

    2011-03-20

    Negative charge material, AlOxNy, has been fabricated to passivate the surface of p-type silicon. The fabrication of AlOxNy was possible by using ion beam sputtering deposition to deposit AlN thin film on the surface of a p-type silicon wafer and following annealing in oxygen ambient. Capacitance-voltage analysis shows the fixed charge density has increased from 10(11) cm(-2) to 2.26×10(12) cm(-2) after annealing. The solar cell efficiency increased from 15.9% to 17.3%, which is also equivalent to the reduction of surface recombination velocity from 1×10(5)  to 32 cm/s.

  10. Process-structure-property relationships of micron thick gadolinium oxide films deposited by reactive electron beam-physical vapor deposition (EB-PVD)

    NASA Astrophysics Data System (ADS)

    Grave, Daniel A.

    Gadolinium oxide (Gd2O3) is an attractive material for solid state neutron detection due to gadolinium's high thermal neutron capture cross section. Development of neutron detectors based on Gd2 O3 requires sufficiently thick films to ensure neutron absorption. In this dissertation work, the process-structure-property relationships of micron thick Gd2O3 films deposited by reactive electron-beam physical vapor deposition (EB-PVD) were studied. Through a systematic design of experiments, fundamental studies were conducted to determine the effects of processing conditions such as deposition temperature, oxygen flow rate, deposition rate, and substrate material on Gd2O3 film crystallographic phase, texture, morphology, grain size, density, and surface roughness. Films deposited at high rates (> 5 A/s) were examined via x-ray diffraction (XRD) and Raman spectroscopy. Quantitative phase volume calculations were performed via a Rietveld refinement technique. All films deposited at high rates were found to be fully monoclinic or mixed cubic/monoclinic phase. Generally, increased deposition temperature and increased oxygen flow resulted in increased cubic phase volume. As film thickness increased, monoclinic phase volume increased. Grazing incidence x-ray diffraction (GIXRD) depth profiling analysis showed that cubic phase was only present under large incidence angle (large penetration depth) measurements, and after a certain point, only monoclinic phase was grown. This was confirmed by transmission electron microscopy (TEM) analysis with selected area diffraction (SAD). Based on this information, a large compressive stress was hypothesized to cause the formation of the monoclinic phase and this hypothesis was confirmed by demonstrating the existence of a stress induced phase transition. An experiment was designed to introduce compressive stress into the Gd2O 3 films via ion beam assisted deposition (IBAD). This allowed for systematic increase in compressive stress while

  11. Effects of tip-substrate gap, deposition temperature, holding time, and pull-off velocity on dip-pen lithography investigated using molecular dynamics simulation

    NASA Astrophysics Data System (ADS)

    Wu, Cheng-Da; Fang, Te-Hua; Lin, Jen-Fin

    2012-05-01

    The process parameters in the dip-pen nanolithography process, including tip-substrate gap, deposition temperature, holding time, and pull-off velocity are evaluated in terms of the mechanism of molecular transference, alkanethiol meniscus characteristic, surface adsorbed energy, and pattern formation using molecular dynamics simulations. The simulation results clearly show that the optimum deposition occurs at a smaller tip-substrate gap, a slower pull-off velocity, a higher temperature, and a longer holding time. The pattern area increases with decreasing tip-substrate gap and increasing deposition temperature and holding time. With an increase in deposition temperature, the molecular transfer ability significantly increases. Pattern height is a function of meniscus length. When the pull-off velocity is decreased, the pattern height increases. The height of the neck in meniscus decreases and the neck width increases with holding time. Meniscus size increases with increasing deposition temperature and holding time.

  12. Molecular beam epitaxy and characterization of stannic oxide

    NASA Astrophysics Data System (ADS)

    White, Mark Earl

    Wide bandgap oxides such as tin-doped indium oxide (ITO), zinc oxide (ZnO), and tin oxide (SnO2) are currently used in a variety of technologically important applications, including gas sensors and transparent conducting films for devices such as flat panel displays and photovoltaics. Due to the focus on industrial applications, prior research did not investigate the basic material properties of SnO2 films due to unoptimized growth methods such as RF sputtering and pulsed laser deposition which produced low resistance, polycrystalline films. Beyond these applications, few attempts to enhance and control the fundamental SnO2 properties for semiconducting applications have been reported. This work develops the heteroepitaxy of SnO2 thin films on r-plane Al2O3 by plasma-assisted molecular beam epitaxy (PA-MBE) and demonstrates control of the electrical transport of those films. Phase-pure, epitaxial single crystalline films were controllably and reproducibly grown. X-ray diffraction measurements indicated that these films exhibited the highest structural quality reported. Depending on the epitaxial conditions, tin- and oxygen-rich growth regimes were observed. An unexpected growth rate decrease in the tin-rich regime was determined to be caused by volatile suboxide formation. Excellent transport properties for naturally n-type SnO2 were achieved: the electron mobility, mu, was 103 cm2/V s at a concentration, n, of 2.7 x 1017 cm-3. To control the bulk electron density, antimony was used as an intentional n-type dopant. Antimony-doped film properties showed the highest reported mobilities for doped films (mu = 36 cm2/V s for n = 2.8 x 10 20 cm-3). Films doped with indium had resistivities over five orders-of-magnitude greater than undoped films. These highly resistive films provided a method to control the electrical transport properties. Further research will facilitate detailed studies of the fundamental properties of SnO2 and its development as an oxide with full

  13. Note: A short-pulse high-intensity molecular beam valve based on a piezoelectric stack actuator

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Abeysekera, Chamara; Joalland, Baptiste; Shi, Yuanyuan

    2014-11-15

    Solenoid and piezoelectric disk valves, which are widely used to generate molecular beam pulses, still suffer from significant restrictions, such as pulse durations typically >50 μs, low repetition rates, and limited gas flows and operational times. Much of this arises owing to the limited forces these actuators can achieve. To overcome these limitations, we have developed a new pulsed valve based on a high-force piezoelectric stack actuator. We show here that operation with pulse durations as low as 20 μs and repetition rates up to 100 Hz can be easily achieved by operating the valve in conjunction with a commercialmore » fast high-voltage switch. We outline our design and demonstrate its performance with molecular beam characterization via velocity map ion imaging.« less

  14. Gas-phase reactions in extraterrestrial environments: laboratory investigations by crossed molecular beams.

    PubMed

    Balucani, Nadia; Casavecchia, Piergiorgio

    2006-12-01

    We have investigated gas-phase reactions of N((2)D) with the most abundant hydrocarbons in the atmosphere of Titan by the crossed molecular beam technique. In all cases, molecular products containing a novel CN bond are formed, thus suggesting possible routes of formation of gas-phase nitriles in the atmosphere of Titan and primordial Earth. The same approach has been recently extended to the study of radical-radical reactions, such as the reaction of atomic oxygen with the CH(3) and C(3)H(5) radicals. Products other than those already considered in the modeling of planetary atmospheres and interstellar medium have been identified.

  15. High-throughput shadow mask printing of passive electrical components on paper by supersonic cluster beam deposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Caruso, Francesco; Bellacicca, Andrea; Milani, Paolo, E-mail: pmilani@mi.infn.it

    We report the rapid prototyping of passive electrical components (resistors and capacitors) on plain paper by an additive and parallel technology consisting of supersonic cluster beam deposition (SCBD) coupled with shadow mask printing. Cluster-assembled films have a growth mechanism substantially different from that of atom-assembled ones providing the possibility of a fine tuning of their electrical conduction properties around the percolative conduction threshold. Exploiting the precise control on cluster beam intensity and shape typical of SCBD, we produced, in a one-step process, batches of resistors with resistance values spanning a range of two orders of magnitude. Parallel plate capacitors withmore » paper as the dielectric medium were also produced with capacitance in the range of tens of picofarads. Compared to standard deposition technologies, SCBD allows for a very efficient use of raw materials and the rapid production of components with different shape and dimensions while controlling independently the electrical characteristics. Discrete electrical components produced by SCBD are very robust against deformation and bending, and they can be easily assembled to build circuits with desired characteristics. The availability of large batches of these components enables the rapid and cheap prototyping and integration of electrical components on paper as building blocks of more complex systems.« less

  16. Molecular organization in MAPLE-deposited conjugated polymer thin films and the implications for carrier transport characteristics

    DOE PAGES

    Dong, Ban Xuan; Li, Anton; Strzalka, Joseph; ...

    2016-09-18

    The morphological structure of poly(3-hexylthiophene) (P3HT) thin films deposited by both Matrix Assisted Pulsed Laser Evaporation (MAPLE) and solution spin-casting methods are investigated. We found that the MAPLE samples possessed a higher degree of disorder, with random orientations of polymer crystallites along the side-chain stacking, π-π stacking, and conjugated backbone directions. Furthermore, the average molecular orientations and relative degrees of crystallinity of MAPLE-deposited polymer films are insensitive to the chemistries of the substrates onto which they were deposited; this is in stark contrast to the films prepared by the conventional spin-casting technique. In spite of the seemingly unfavorable molecular orientations andmore » the highly disordered morphologies, the in-plane charge carrier transport characteristics of the MAPLE samples are comparable to those of spin-cast samples, exhibiting similar transport activation energies (56 meV versus 54 meV) to those reported in the literature for high mobility polymers.« less

  17. Molecular organization in MAPLE-deposited conjugated polymer thin films and the implications for carrier transport characteristics

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Dong, Ban Xuan; Li, Anton; Strzalka, Joseph

    The morphological structure of poly(3-hexylthiophene) (P3HT) thin films deposited by both Matrix Assisted Pulsed Laser Evaporation (MAPLE) and solution spin-casting methods are investigated. We found that the MAPLE samples possessed a higher degree of disorder, with random orientations of polymer crystallites along the side-chain stacking, π-π stacking, and conjugated backbone directions. Furthermore, the average molecular orientations and relative degrees of crystallinity of MAPLE-deposited polymer films are insensitive to the chemistries of the substrates onto which they were deposited; this is in stark contrast to the films prepared by the conventional spin-casting technique. In spite of the seemingly unfavorable molecular orientations andmore » the highly disordered morphologies, the in-plane charge carrier transport characteristics of the MAPLE samples are comparable to those of spin-cast samples, exhibiting similar transport activation energies (56 meV versus 54 meV) to those reported in the literature for high mobility polymers.« less

  18. Evolution of Texture from a Single Crystal Ti-6Al-4V Substrate During Electron Beam Directed Energy Deposition

    NASA Astrophysics Data System (ADS)

    Butler, Todd M.; Brice, Craig A.; Tayon, Wesley A.; Semiatin, S. Lee; Pilchak, Adam L.

    2017-10-01

    Additive manufacturing of Ti-6Al-4V commonly produces 〈001〉 β -fiber textures aligned with the build direction. We have performed wire-feed electron beam directed energy deposition on the {112} β plane of a single prior β-grain. The build initially grew epitaxially from the substrate with the preferred 〈001〉 growth direction significantly angled away from the build direction. However, continued layer deposition drove the formation of a 〈001〉 β -fiber texture aligned with the build direction and the direction of the strongest thermal gradient.

  19. Molecular beam studies of the growth and kinetics of self-assembled monolayers

    NASA Astrophysics Data System (ADS)

    Schwartz, Peter Vincent

    Low energy helium diffraction, a quantitative structural characterization tool, has been used to measure the growth kinetics of self-assembled monolayers (SAMs). Special attention was given to the growth of decanethiol monolayers deposited from a molecular beam onto the (111) face of gold single crystals especially at the initial stages of growth. The influence of changing impingement rate, substrate temperature, and annealing treatments was investigated. We also studied the structure and dynamics of physisorbed adlayers on top of the monolayers and structural variations in monolayers caused by changes in chemical composition such as the addition of phenyl groups, and hydroxyl groups. Experimental work involved renovations to the existing diffractometer. The apparatus was improved with respect to its signal to noise ratio; efficiency in sample preparation and data collection; and the reproducibility of obtaining clean crystal surfaces. The renovations greatly extended the range of experiments of which the diffraction machine is capable. The growth of n-decanethiol SAMs by gas deposition was identified as a multi-stage process where the initial "lying down" layer grows on the bare gold surface with a near unity sticking coefficient, while the subsequent, "standing-up" phase grows with a sticking coefficient of about 10sp{-3}. The ordering and chemisorption of a single "lying down" layer of decanethiol was investigated by annealing a single layer physisorbed on a 130 K Au(111) surface to incrementally higher temperatures. The molecules first align themselves with the underlying gold substrate, then orient themselves in the "head to head" two molecule unit mesh, then chemisorb at still higher temperatures. Overlayers of long chain molecules grown on top of monolayers on Au(111) are found to be more ordered than the underlying monolayers themselves. The energy of adsorption to the organic surface is found to be very close to that of the bulk value, even for a gold

  20. Energy deposition evaluation for ultra-low energy electron beam irradiation systems using calibrated thin radiochromic film and Monte Carlo simulations

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Matsui, S., E-mail: smatsui@gpi.ac.jp; Mori, Y.; Nonaka, T.

    2016-05-15

    For evaluation of on-site dosimetry and process design in industrial use of ultra-low energy electron beam (ULEB) processes, we evaluate the energy deposition using a thin radiochromic film and a Monte Carlo simulation. The response of film dosimeter was calibrated using a high energy electron beam with an acceleration voltage of 2 MV and alanine dosimeters with uncertainty of 11% at coverage factor 2. Using this response function, the results of absorbed dose measurements for ULEB were evaluated from 10 kGy to 100 kGy as a relative dose. The deviation between the responses of deposit energy on the films andmore » Monte Carlo simulations was within 15%. As far as this limitation, relative dose estimation using thin film dosimeters with response function obtained by high energy electron irradiation and simulation results is effective for ULEB irradiation processes management.« less

  1. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Cruz Hernandez, Esteban; Rojas Ramirez, Juan-Salvador; Contreras Hernandez, Rocio

    2007-02-09

    In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface.

  2. Apparatus for laser assisted thin film deposition

    DOEpatents

    Warner, B.E.; McLean, W. II

    1996-02-13

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus. 9 figs.

  3. Apparatus for laser assisted thin film deposition

    DOEpatents

    Warner, Bruce E.; McLean, II, William

    1996-01-01

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus.

  4. Molecular Layer Deposition for Surface Modification of Lithium-Ion Battery Electrodes

    DOE PAGES

    Ban, Chunmei; George, Steven M.

    2016-10-21

    This review presents the MLD process and its outstanding attributes for electrochemical applications and is inspired by recent successes in applying molecular layer deposition (MLD) to stabilize lithium-ion (Li-ion) electrodes. Furthermore, this review discusses various MLD materials and their implementation in Li-ion electrodes. The rationale behind these emerging uses of MLD is examined to motivate future efforts on the fundamental understanding of interphase chemistry and the development of new materials for enhanced electrochemical performance.

  5. History of Molecular Beam Research: Personal Reminiscences of the Important Evolutionary Period 1919-1933

    ERIC Educational Resources Information Center

    Estermann, Immanuel

    1975-01-01

    Describes the early historical period of the molecular beam method, including the Stern-Gerlach experiment, the work of Davisson and Germer, and the magnetic moment determinations for the proton, neutron, and deuteron. Contains some amusing historical sidelights on the research personalities that dominated that period. (MLH)

  6. Ion-beam doping of GaAs with low-energy (100 eV) C + using combined ion-beam and molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Iida, Tsutomu; Makita, Yunosuke; Kimura, Shinji; Winter, Stefan; Yamada, Akimasa; Fons, Paul; Uekusa, Shin-ichiro

    1995-01-01

    A combined ion-beam and molecular-beam-epitaxy (CIBMBE) system has been developed. This system consists of an ion implanter capable of producing ions in the energy range of 30 eV-30 keV and conventional solid-source MBE. As a successful application of CIBMBE, low-energy (100 eV) carbon ion (C+) irradiation during MBE growth of GaAs was carried out at substrate temperatures Tg between 500 and 590 °C. C+-doped layers were characterized by low-temperature (2 K) photoluminescence (PL), Raman scattering, and van der Pauw measurements. PL spectra of undoped GaAs grown by CIBMBE revealed that unintentional impurity incorporation into the epilayer is extremely small and precise doping effects are observable. CAs acceptor-related emissions such as ``g,'' [g-g], and [g-g]β are observed and their spectra are significantly changed with increasing C+ beam current density Ic. PL measurements showed that C atoms were efficiently incorporated during MBE growth by CIBMBE and were optically well activated as an acceptor in the as-grown condition even for Tg as low as 500 °C. Raman measurement showed negligible lattice damage of the epilayer bombarded with 100 eV C+ with no subsequent heat treatment. These results indicate that contamination- and damage-free impurity doping without postgrowth annealing can be achieved by the CIBMBE method.

  7. Ion-beam doping of GaAs with low-energy (100 eV) C(+) using combined ion-beam and molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lida, Tsutomu; Makita, Yunosuke; Kimura, Shinji; Winter, Stefan; Yamada, Akimasa; Fons, Paul; Uekusa, Shin-Ichiro

    1995-01-01

    A combined ion-beam and molecular-beam-epitaxy (CIBMBE) system has been developed. This system consists of an ion implanter capable of producing ions in the energy range of 30 eV - 30 keV and conventional solid-source MBE. As a successful application of CIBMBE, low-energy (100 eV) carbon ion (C(+)) irradiation during MBE growth of GaAs was carried out at substrate temperatures T(sub g) between 500 and 590 C. C(+)-doped layers were characterized by low-temperature (2 K) photoluminescence (PL), Raman scattering, and van der Pauw measurements. PL spectra of undoped GaAs grown by CIBMBE revealed that unintentional impurity incorporation into the epilayer is extremely small and precise doping effects are observable. C(sub As) acceptor-related emissions such as 'g', (g-g), and (g-g)(sub beta) are observed and their spectra are significantly changed with increasing C(+) beam current density I(sub c). PL measurements showed that C atoms were efficiently incorporated during MBE growth by CIBMBE and were optically well activated as an acceptor in the as-grown condition even for T(sub g) as low as 500 C. Raman measurement showed negligible lattice damage of the epilayer bombarded with 100 eV C(+) with no subsequent heat treatment. These results indicate that contamination- and damage-free impurity doping without postgrowth annealing can be achieved by the CIBMBE method.

  8. Environmental sensing with optical fiber sensors processed with focused ion beam and atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Flores, Raquel; Janeiro, Ricardo; Dahlem, Marcus; Viegas, Jaime

    2015-03-01

    We report an optical fiber chemical sensor based on a focused ion beam processed optical fiber. The demonstrated sensor is based on a cavity formed onto a standard 1550 nm single-mode fiber by either chemical etching, focused ion beam milling (FIB) or femtosecond laser ablation, on which side channels are drilled by either ion beam milling or femtosecond laser irradiation. The encapsulation of the cavity is achieved by optimized fusion splicing onto a standard single or multimode fiber. The empty cavity can be used as semi-curved Fabry-Pérot resonator for gas or liquid sensing. Increased reflectivity of the formed cavity mirrors can be achieved with atomic layer deposition (ALD) of alternating metal oxides. For chemical selective optical sensors, we demonstrate the same FIB-formed cavity concept, but filled with different materials, such as polydimethylsiloxane (PDMS), poly(methyl methacrylate) (PMMA) which show selective swelling when immersed in different solvents. Finally, a reducing agent sensor based on a FIB formed cavity partially sealed by fusion splicing and coated with a thin ZnO layer by ALD is presented and the results discussed. Sensor interrogation is achieved with spectral or multi-channel intensity measurements.

  9. Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition

    NASA Astrophysics Data System (ADS)

    Liu, Ying; Hirsch, Dietmar; Fechner, Renate; Hong, Yilin; Fu, Shaojun; Frost, Frank; Rauschenbach, Bernd

    2018-01-01

    The ion beam sputtering (IBS) of smooth mono-elemental Si with impurity co-deposition is extended to a pre-rippled binary compound surface of fused silica (SiO2). The dependence of the rms roughness and the deposited amount of Al on the distance from the Al source under Ar+ IBS with Al co-deposition was investigated on smooth SiO2, pre-rippled SiO2, and smooth Si surfaces, using atomic force microscopy and X-ray photoelectron spectroscopy. Although the amounts of Al deposited on these three surfaces all decreased with increasing distance from the Al target, the morphology and rms roughness of the smooth Si surface did not demonstrate a strong distance dependence. In contrast to smooth Si, the rms roughness of both the smooth and pre-rippled SiO2 surfaces exhibited a similar distance evolution trend of increasing, decreasing, and final stabilization at the distance where the results were similar to those obtained without Al co-deposition. However, the pre-rippled SiO2 surfaces showed a stronger modulation of rms roughness than the smooth surfaces. At the incidence angles of 60° and 70°, dot-decorated ripples and roof-tiles were formed on the smooth SiO2 surfaces, respectively, whereas nanostructures of closely aligned grains and blazed facets were generated on the pre-rippled SiO2, respectively. The combination of impurity co-deposition with pre-rippled surfaces was found to facilitate the formation of novel types of nanostructures and morphological growth. The initial ripples act as a template to guide the preferential deposition of Al on the tops of the ripples or the ripple sides facing the Al wedge, but not in the valleys between the ripples, leading to 2D grains and quasi-blazed grating, which offer significant promise in optical applications. The rms roughness enhancement is attributed not to AlSi, but to AlOxFy compounds originating mainly from the Al source.

  10. Intrinsic magnetic properties of bimetallic nanoparticles elaborated by cluster beam deposition.

    PubMed

    Dupuis, V; Khadra, G; Hillion, A; Tamion, A; Tuaillon-Combes, J; Bardotti, L; Tournus, F

    2015-11-14

    In this paper, we present some specific chemical and magnetic order obtained very recently on characteristic bimetallic nanoalloys prepared by mass-selected Low Energy Cluster Beam Deposition (LECBD). We study how the competition between d-atom hybridization, complex structure, morphology and chemical affinity affects their intrinsic magnetic properties at the nanoscale. The structural and magnetic properties of these nanoalloys were investigated using various experimental techniques that include High Resolution Transmission Electron Microscopy (HRTEM), Superconducting Quantum Interference Device (SQUID) magnetometry, as well as synchrotron techniques such as Extended X-ray Absorption Fine Structure (EXAFS) and X-ray Magnetic Circular Dichroism (XMCD). Depending on the chemical nature of the nanoalloys we observe different magnetic responses compared to their bulk counterparts. In particular, we show how specific relaxation in nanoalloys impacts their magnetic anisotropy; and how finite size effects (size reduction) inversely enhance their magnetic moment.

  11. Ultraviolet optical and microstructural properties of MgF2 and LaF3 coatings deposited by ion-beam sputtering and boat and electron-beam evaporation.

    PubMed

    Ristau, Detlev; Günster, Stefan; Bosch, Salvador; Duparré, Angela; Masetti, Enrico; Ferré-Borrull, Josep; Kiriakidis, George; Peiró, Francesca; Quesnel, Etienne; Tikhonravov, Alexander

    2002-06-01

    Single layers of MgF2 and LaF3 were deposited upon superpolished fused-silica and CaF2 substrates by ion-beam sputtering (IBS) as well as by boat and electron beam (e-beam) evaporation and were characterized by a variety of complementary analytical techniques. Besides undergoing photometric and ellipsometric inspection, the samples were investigated at 193 and 633 nm by an optical scatter measurement facility. The structural properties were assessed with atomic-force microscopy, x-ray diffraction, TEM techniques that involved conventional thinning methods for the layers. For measurement of mechanical stress in the coatings, special silicon substrates were coated and analyzed. The dispersion behavior of both deposition materials, which was determined on the basis of various independent photometric measurements and data reduction techniques, is in good agreement with that published in the literature and with the bulk properties of the materials. The refractive indices of the MgF2 coatings ranged from 1.415 to 1.440 for the wavelength of the ArF excimer laser (193 nm) and from 1.435 to 1.465 for the wavelength of the F2 excimer laser (157 nm). For single layers of LaF3 the refractive indices extended from 1.67 to 1.70 at 193 nm to approximately 1.80 at 157 nm. The IBS process achieves the best homogeneity and the lowest surface roughness values (close to 1 nm(rms)) of the processes compared in the joint experiment. In contrast to MgF2 boat and e-beam evaporated coatings, which exhibit tensile mechanical stress ranging from 300 to 400 MPa, IBS coatings exhibit high compressive stress of as much as 910 MPa. A similar tendency was found for coating stress in LaF3 single layers. Experimental results are discussed with respect to the microstructural and compositional properties as well as to the surface topography of the coatings.

  12. Ultraviolet optical and microstructural properties of MgF2 and LaF3 coatings deposited by ion-beam sputtering and boat and electron-beam evaporation

    NASA Astrophysics Data System (ADS)

    Ristau, Detlev; Gunster, Stefan; Bosch, Salvador; Duparre, Angela; Masetti, Enrico; Ferre-Borrull, Josep; Kiriakidis, George; Peiro, Francesca; Quesnel, Etienne; Tikhonravov, Alexander

    2002-06-01

    Single layers of MgF2 and LaF3 were deposited upon superpolished fused-silica and CaF2 substrates by ion-beam sputtering (IBS) as well as by boat and electron beam (e-beam) evaporation and were characterized by a variety of complementary analytical techniques. Besides undergoing photometric and ellipsometric inspection, the samples were investigated at 193 and 633 nm by an optical scatter measurement facility. The structural properties were assessed with atomic-force microscopy, x-ray diffraction, TEM techniques that involved conventional thinning methods for the layers. For measurement of mechanical stress in the coatings, special silicon substrates were coated and analyzed. The dispersion behavior of both deposition materials, which was determined on the basis of various independent photometric measurements and data reduction techniques, is in good agreement with that published in the literature and with the bulk properties of the materials. The refractive indices of the MgF2 coatings ranged from 1.415 to 1.440 for the wavelength of the ArF excimer laser (193 nm) and from 1.435 to 1.465 for the wavelength of the F2 excimer laser (157 nm). For single layers of LaF3 the refractive indices extended from 1.67 to 1.70 at 193 nm to approx1.80 at 157 nm. The IBS process achieves the best homogeneity and the lowest surface roughness values (close to 1 nmrms) of the processes compared in the joint experiment. In contrast to MgF2 boat and e-beam evaporated coatings, which exhibit tensile mechanical stress ranging from 300 to 400 MPa, IBS coatings exhibit high compressive stress of as much as 910 MPa. A similar tendency was found for coating stress in LaF3 single layers. Experimental results are discussed with respect to the microstructural and compositional properties as well as to the surface topography of the coatings.

  13. A tandem mass spectrometer for crossed-beam irradiation of mass-selected molecular systems by keV atomic ions

    NASA Astrophysics Data System (ADS)

    Schwob, Lucas; Lalande, Mathieu; Chesnel, Jean-Yves; Domaracka, Alicja; Huber, Bernd A.; Maclot, Sylvain; Poully, Jean-Christophe; Rangama, Jimmy; Rousseau, Patrick; Vizcaino, Violaine; Adoui, Lamri; Méry, Alain

    2018-04-01

    In the present paper, we describe a new home-built crossed-beam apparatus devoted to ion-induced ionization and fragmentation of isolated biologically relevant molecular systems. The biomolecular ions are produced by an electrospray ionization source, mass-over-charge selected, accumulated in a 3D ion trap, and then guided to the extraction region of an orthogonal time-of-flight mass spectrometer. Here, the target molecular ions interact with a keV atomic ion beam produced by an electron cyclotron resonance ion source. Cationic products from the collision are detected on a position sensitive detector and analyzed by time-of-flight mass spectrometry. A detailed description of the operation of the setup is given, and early results from irradiation of a protonated pentapeptide (leucine-enkephalin) by a 7 keV He+ ion beam are presented as a proof-of-principle.

  14. Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wei, Hongling; Chen, Zhengwei; Wu, Zhenping; Cui, Wei; Huang, Yuanqi; Tang, Weihua

    2017-11-01

    Ga2O3 with a wide bandgap of ˜ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE) at different substrate temperatures. The influences of substrate temperature on structural and optical properties have been systematically investigated by means of X-ray diffraction, Transmission electron microscope and UV-vis absorption spectra. High quality cubic structure and [111] oriented CuGa2O4 film can be obtained at substrate temperature of 750 °C. It's also demonstrated that the CuGa2O4 film has a bandgap of ˜ 4.4 eV and a best crystal quality at 750 °C, suggesting that CuGa2O4 film is a promising candidate for applications in ultraviolet optoelectronic devices.

  15. Molecular and Microbial Mechanisms Increasing Soil C Storage Under Future Rates of Anthropogenic N Deposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zak, Donald R.

    A growing body of evidence reveals that anthropogenic N deposition can reduce the microbial decay of plant detritus and increase soil C storage across a wide range of terrestrial ecosystems. This aspect of global change has the potential to constrain the accumulation of anthropogenic CO 2 in the Earth’s atmosphere, and hence slow the pace of climate warming. The molecular and microbial mechanisms underlying this biogeochemical response are not understood, and they are not a component of any coupled climate-biogeochemical model estimating ecosystem C storage, and hence, the future climate of an N-enriched Earth. Here, we report the use ofmore » genomic-enabled approaches to identify the molecular underpinnings of the microbial mechanisms leading to greater soil C storage in response to anthropogenic N deposition, thereby enabling us to better anticipate changes in soil C storage.« less

  16. Area-selective atomic layer deposition of Ru on electron-beam-written Pt(C) patterns versus SiO2 substratum

    NASA Astrophysics Data System (ADS)

    Junige, Marcel; Löffler, Markus; Geidel, Marion; Albert, Matthias; Bartha, Johann W.; Zschech, Ehrenfried; Rellinghaus, Bernd; van Dorp, Willem F.

    2017-09-01

    Area selectivity is an emerging sub-topic in the field of atomic layer deposition (ALD), which employs opposite nucleation phenomena to distinct heterogeneous starting materials on a surface. In this paper, we intend to grow Ru exclusively on locally pre-defined Pt patterns, while keeping a SiO2 substratum free from any deposition. In a first step, we study in detail the Ru ALD nucleation on SiO2 and clarify the impact of the set-point temperature. An initial incubation period with actually no growth was revealed before a formation of minor, isolated RuO x islands; clearly no continuous Ru layer formed on SiO2. A lower temperature was beneficial in facilitating a longer incubation and consequently a wider window for (inherent) selectivity. In a second step, we write C-rich Pt micro-patterns on SiO2 by focused electron-beam-induced deposition (FEBID), varying the number of FEBID scans at two electron beam acceleration voltages. Subsequently, the localized Pt(C) deposits are pre-cleaned in O2 and overgrown by Ru ALD. Already sub-nanometer-thin Pt(C) patterns, which were supposedly purified into some form of Pt(O x ), acted as very effective activation for the locally restricted, thus area-selective ALD growth of a pure, continuous Ru covering, whereas the SiO2 substratum sufficiently inhibited towards no growth. FEBID at lower electron energy reduced unwanted stray deposition and achieved well-resolved pattern features. We access the nucleation phenomena by utilizing a hybrid metrology approach, which uniquely combines in-situ real-time spectroscopic ellipsometry, in-vacuo x-ray photoelectron spectroscopy, ex-situ high-resolution scanning electron microscopy, and mapping energy-dispersive x-ray spectroscopy.

  17. Molecular ion yield enhancement induced by gold deposition in static secondary ion mass spectrometry

    NASA Astrophysics Data System (ADS)

    Wehbe, Nimer; Delcorte, Arnaud; Heile, Andreas; Arlinghaus, Heinrich F.; Bertrand, Patrick

    2008-12-01

    Static ToF-SIMS was used to evaluate the effect of gold condensation as a sample treatment prior to analysis. The experiments were carried out with a model molecular layer (Triacontane M = 422.4 Da), upon atomic (In +) and polyatomic (Bi 3+) projectile bombardment. The results indicate that the effect of molecular ion yield improvement using gold metallization exists only under atomic projectile impact. While the quasi-molecular ion (M+Au) + signal can become two orders of magnitude larger than that of the deprotonated molecular ion from the pristine sample under In + bombardment, it barely reaches the initial intensity of (M-H) + when Bi 3+ projectiles are used. The differences observed for mono- and polyatomic primary ion bombardment might be explained by differences in near-surface energy deposition, which influences the sputtering and ionization processes.

  18. The Cl + O3 reaction: a detailed QCT simulation of molecular beam experiments.

    PubMed

    Menéndez, M; Castillo, J F; Martínez-Haya, B; Aoiz, F J

    2015-10-14

    We have studied in detail the dynamics of the Cl + O3 reaction in the 1-56 kcal mol(-1) collision energy range using quasi-classical trajectory (QCT) calculations on a recent potential energy surface (PES) [J. F. Castillo et al., Phys. Chem. Chem. Phys., 2011, 13, 8537]. The main goal of this work has been to assess the accuracy of the PES and the reliability of the QCT method by comparison with the existing crossed molecular beam results [J. Zhang and Y. T. Lee J. Phys. Chem. A, 1997, 101, 6485]. For this purpose, we have developed a methodology that allows us to determine the experimental observables in crossed molecular beam experiments (integral and differential cross sections, recoil velocity distributions, scattering angle-recoil velocity polar maps, etc.) as continuous functions of the collision energy. Using these distributions, raw experimental data in the laboratory frame (angular distributions and time-of-flight spectra) have been simulated from first principles with the sole information on the instrumental parameters and taking into account the energy spread. A general good agreement with the experimental data has been found, thereby demonstrating the adequacy of the QCT method and the quality of the PES to describe the dynamics of this reaction at the level of resolution of the existing crossed beam experiments. Some features which are apparent in the differential cross sections have also been analysed in terms of the dynamics of the reaction and its evolution with the collision energy.

  19. Structural transitions in electron beam deposited Co-carbonyl suspended nanowires at high electrical current densities.

    PubMed

    Gazzadi, Gian Carlo; Frabboni, Stefano

    2015-01-01

    Suspended nanowires (SNWs) have been deposited from Co-carbonyl precursor (Co2(CO)8) by focused electron beam induced deposition (FEBID). The SNWs dimensions are about 30-50 nm in diameter and 600-850 nm in length. The as-deposited material has a nanogranular structure of mixed face-centered cubic (FCC) and hexagonal close-packed (HCP) Co phases, and a composition of 80 atom % Co, 15 atom % O and 5 atom % C, as revealed by transmission electron microscopy (TEM) analysis and by energy-dispersive X-ray (EDX) spectroscopy, respectively. Current (I)-voltage (V) measurements with current densities up to 10(7) A/cm(2) determine different structural transitions in the SNWs, depending on the I-V history. A single measurement with a sudden current burst leads to a polycrystalline FCC Co structure extended over the whole wire. Repeated measurements at increasing currents produce wires with a split structure: one half is polycrystalline FCC Co and the other half is graphitized C. The breakdown current density is found at 2.1 × 10(7) A/cm(2). The role played by resistive heating and electromigration in these transitions is discussed.

  20. Molecular Analysis of Flood Deposits in the Tennessee River Valley: Implications for Understanding Carbon Cycling in Fluvial Environments and Anthropogenic Impacts

    NASA Astrophysics Data System (ADS)

    Blackaby, E.; Craven, O. D.; Hockaday, W. C.; Forman, S. L.; Stinchcomb, G. E.

    2017-12-01

    The middle Tennessee River Valley contains both historic and prehistoric (>AD 1600) flood deposits. Stratigraphic sequences of stacked flood deposits that often bury soils provide new insights on organic matter transported and preserved prior to and after European colonization. This study focused on understanding carbon cycling within a dynamic fluvial system and quantifying the anthropogenic effect on flood processes through the analysis of molecular components of the organic matter. The data may be helpful in discerning the organic geochemical fingerprint for historic and prehistoric flood deposits. Ten samples were collected from three sites at varying depths and dated using optically stimulated luminescence (OSL). All samples underwent solid-state cross polar 13C NMR analysis at twelve kilohertz, and a molecular mixing model (MMM) was used to determine the molecular components of the organic matter present in each sample. The MMM categorized carbon molecules present in each sample in terms of carbohydrate, protein, lipid, lignin, char, or pure carbonyl. Char was the most prominent molecular component of all ten samples ranging from 28.7 to 55.9% and comprised larger percentages in prehistoric deposits. The historic deposits, while still char dominated, showed more molecular diversity with higher percentages in non-char carbon groups. The carbonyl, lipid, and carbohydrate groups are present throughout all the samples with the carbonyl ranging from 9.3 to 31.4%, the lipid from 5.5 to 16.7%, and the carbohydrate from 4.4 to 16.9%. The high amount of carbonyl throughout the samples indicates that the deposits existed in a highly oxidizing environment. Differences in the presence and amount of carbon groups between historic and prehistoric flood deposits potentially reflect diagenic alternation of organic matter through time, changes in human land use, or some combination processes. These preliminary results possibly indicate changes in carbon pools accessed with

  1. Purification of Nanoscale Electron-Beam-Induced Platinum Deposits via a Pulsed Laser-Induced Oxidation Reaction

    DOE PAGES

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; ...

    2014-11-05

    Platinum–carbon deposits made via electron-beam-induced deposition were purified in this study via a pulsed laser-induced oxidation reaction and erosion of the amorphous carbon to form pure platinum. Purification proceeds from the top down and is likely catalytically facilitated via the evolving platinum layer. Thermal simulations suggest a temperature threshold of ~485 K, and the purification rate is a function of the PtC 5 thickness (80–360 nm) and laser pulse width (1–100 μs) in the ranges studied. The thickness dependence is attributed to the ~235 nm penetration depth of the PtC 5 composite at the laser wavelength, and the pulse-width dependencemore » is attributed to the increased temperatures achieved at longer pulse widths. Finally, remarkably fast purification is realized at cumulative laser exposure times of less than 1 s.« less

  2. Purification of Nanoscale Electron-Beam-Induced Platinum Deposits via a Pulsed Laser-Induced Oxidation Reaction

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon

    Platinum–carbon deposits made via electron-beam-induced deposition were purified in this study via a pulsed laser-induced oxidation reaction and erosion of the amorphous carbon to form pure platinum. Purification proceeds from the top down and is likely catalytically facilitated via the evolving platinum layer. Thermal simulations suggest a temperature threshold of ~485 K, and the purification rate is a function of the PtC 5 thickness (80–360 nm) and laser pulse width (1–100 μs) in the ranges studied. The thickness dependence is attributed to the ~235 nm penetration depth of the PtC 5 composite at the laser wavelength, and the pulse-width dependencemore » is attributed to the increased temperatures achieved at longer pulse widths. Finally, remarkably fast purification is realized at cumulative laser exposure times of less than 1 s.« less

  3. Development of an apparatus for obtaining molecular beams in the energy range from 2 to 200 eV

    NASA Technical Reports Server (NTRS)

    Clapier, R.; Devienne, F. M.; Roustan, A.; Roustan, J. C.

    1985-01-01

    The formation and detection of molecular beams obtained by charge exchange from a low-energy ion source is discussed. Dispersion in energy of the ion source was measured and problems concerning detection of neutral beams were studied. Various methods were used, specifically secondary electron emissivity of a metallic surface and ionization of a gas target with a low ionization voltage. The intensities of neutral beams as low as 10 eV are measured by a tubular electron multiplier and a lock-in amplifier.

  4. Pulsed laser deposition for the synthesis of monolayer WSe2

    NASA Astrophysics Data System (ADS)

    Mohammed, A.; Nakamura, H.; Wochner, P.; Ibrahimkutty, S.; Schulz, A.; Müller, K.; Starke, U.; Stuhlhofer, B.; Cristiani, G.; Logvenov, G.; Takagi, H.

    2017-08-01

    Atomically thin films of WSe2 from one monolayer up to 8 layers were deposited on an Al2O3 r-cut ( 1 1 ¯ 02 ) substrate using a hybrid-Pulsed Laser Deposition (PLD) system where a laser ablation of pure W is combined with a flux of Se. Specular X-ray reflectivities of films were analysed and were consistent with the expected thickness. Raman measurement and atomic force microscopy confirmed the formation of a WSe2 monolayer and its spatial homogeneity over the substrate. Grazing-incidence X-ray diffraction uncovered an in-plane texture in which WSe2 [ 10 1 ¯ 0 ] preferentially aligned with Al2O3 [ 11 2 ¯ 0 ]. These results present a potential to create 2D transition metal dichalcogenides by PLD, where the growth kinetics can be steered in contrast to common growth techniques like chemical vapor deposition and molecular beam epitaxy.

  5. A high pressure modulated molecular beam mass spectrometric sampling system

    NASA Technical Reports Server (NTRS)

    Stearns, C. A.; Kohl, F. J.; Fryburg, G. C.; Miller, R. A.

    1977-01-01

    The current state of understanding of free-jet high pressure sampling is critically reviewed and modifications of certain theoretical and empirical considerations are presented. A high pressure, free-jet expansion, modulated molecular beam, mass spectrometric sampling apparatus was constructed and this apparatus is described in detail. Experimental studies have demonstrated that the apparatus can be used to sample high temperature systems at pressures up to one atmosphere. Condensible high temperature gaseous species have been routinely sampled and the mass spectrometric detector has provided direct identification of sampled species. System sensitivity is better than one tenth of a part per million. Experimental results obtained with argon and nitrogen beams are presented and compared to theoretical predictions. These results and the respective comparison are taken to indicate acceptable performance of the sampling apparatus. Results are also given for two groups of experiments related to hot corrosion studies. The formation of gaseous sodium sulfate in doped methane-oxygen flames was characterized and the oxidative vaporization of metals was studied in an atmospheric pressure flowing gas system to which gaseous salt partial pressures were added.

  6. Ion beam texturing

    NASA Technical Reports Server (NTRS)

    Hudson, W. R.

    1976-01-01

    A microscopic surface texture is created by sputter etching a surface while simultaneously sputter depositing a lower sputter yield material onto the surface. A xenon ion beam source has been used to perform this texturing process on samples as large as three centimeters in diameter. Ion beam textured surface structures have been characterized with SEM photomicrographs for a large number of materials including Cu, Al, Si, Ti, Ni, Fe, Stainless steel, Au, and Ag. Surfaces have been textured using a variety of low sputter yield materials - Ta, Mo, Nb, and Ti. The initial stages of the texture creation have been documented, and the technique of ion beam sputter removal of any remaining deposited material has been studied. A number of other texturing parameters have been studied such as the variation of the texture with ion beam power, surface temperature, and the rate of texture growth with sputter etching time.

  7. Crossed Molecular Beam Study of the Reactions of Oxygen and Fluorine Atoms.

    DTIC Science & Technology

    1981-03-30

    Because the sum of the translational energy and internal energy is the excess energy available for dissociatior, the fastest products detected should...large as 19.5 kcal, then at least 15 kcal/mole is available to the products in the ketene dissociation at 351 nm. A maximum of 3.8 kcal appears as...spectrometric measurements of velocity and angular distri- butions of primary products using an universal crossed molecular beams apparatus. Two types of

  8. High power ultraviolet light emitting diodes based on GaN /AlGaN quantum wells produced by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Cabalu, J. S.; Bhattacharyya, A.; Thomidis, C.; Friel, I.; Moustakas, T. D.; Collins, C. J.; Komninou, Ph.

    2006-11-01

    In this paper, we report on the growth by molecular beam epitaxy and fabrication of high power nitride-based ultraviolet light emitting diodes emitting in the spectral range between 340 and 350nm. The devices were grown on (0001) sapphire substrates via plasma-assisted molecular beam epitaxy. The growth of the light emitting diode (LED) structures was preceded by detailed materials studies of the bottom n-AlGaN contact layer, as well as the GaN /AlGaN multiple quantum well (MQW) active region. Specifically, kinetic conditions were identified for the growth of the thick n-AlGaN films to be both smooth and to have fewer defects at the surface. Transmission-electron microscopy studies on identical GaN /AlGaN MQWs showed good quality and well-defined interfaces between wells and barriers. Large area mesa devices (800×800μm2) were fabricated and were designed for backside light extraction. The LEDs were flip-chip bonded onto a Si submount for better heat sinking. For devices emitting at 340nm, the measured differential on-series resistance is 3Ω with electroluminescence spectrum full width at half maximum of 18nm. The output power under dc bias saturates at 0.5mW, while under pulsed operation it saturates at approximately 700mA to a value of 3mW, suggesting that thermal heating limits the efficiency of these devices. The output power of the investigated devices was found to be equivalent with those produced by the metal-organic chemical vapor deposition and hydride vapor-phase epitaxy methods. The devices emitting at 350nm were investigated under dc operation and the output power saturates at 4.5mW under 200mA drive current.

  9. Comparing postdeposition reactions of electrons and radicals with Pt nanostructures created by focused electron beam induced deposition.

    PubMed

    Spencer, Julie A; Barclay, Michael; Gallagher, Miranda J; Winkler, Robert; Unlu, Ilyas; Wu, Yung-Chien; Plank, Harald; McElwee-White, Lisa; Fairbrother, D Howard

    2017-01-01

    The ability of electrons and atomic hydrogen (AH) to remove residual chlorine from PtCl 2 deposits created from cis -Pt(CO) 2 Cl 2 by focused electron beam induced deposition (FEBID) is evaluated. Auger electron spectroscopy (AES) and energy-dispersive X-ray spectroscopy (EDS) measurements as well as thermodynamics calculations support the idea that electrons can remove chlorine from PtCl 2 structures via an electron-stimulated desorption (ESD) process. It was found that the effectiveness of electrons to purify deposits greater than a few nanometers in height is compromised by the limited escape depth of the chloride ions generated in the purification step. In contrast, chlorine atoms can be efficiently and completely removed from PtCl 2 deposits using AH, regardless of the thickness of the deposit. Although AH was found to be extremely effective at chemically purifying PtCl 2 deposits, its viability as a FEBID purification strategy is compromised by the mobility of transient Pt-H species formed during the purification process. Scanning electron microscopy data show that this results in the formation of porous structures and can even cause the deposit to lose structural integrity. However, this phenomenon suggests that the use of AH may be a useful strategy to create high surface area Pt catalysts and may reverse the effects of sintering. In marked contrast to the effect observed with AH, densification of the structure was observed during the postdeposition purification of PtC x deposits created from MeCpPtMe 3 using atomic oxygen (AO), although the limited penetration depth of AO restricts its effectiveness as a purification strategy to relatively small nanostructures.

  10. Comparing postdeposition reactions of electrons and radicals with Pt nanostructures created by focused electron beam induced deposition

    PubMed Central

    Spencer, Julie A; Barclay, Michael; Gallagher, Miranda J; Winkler, Robert; Unlu, Ilyas; Wu, Yung-Chien; Plank, Harald; McElwee-White, Lisa

    2017-01-01

    The ability of electrons and atomic hydrogen (AH) to remove residual chlorine from PtCl2 deposits created from cis-Pt(CO)2Cl2 by focused electron beam induced deposition (FEBID) is evaluated. Auger electron spectroscopy (AES) and energy-dispersive X-ray spectroscopy (EDS) measurements as well as thermodynamics calculations support the idea that electrons can remove chlorine from PtCl2 structures via an electron-stimulated desorption (ESD) process. It was found that the effectiveness of electrons to purify deposits greater than a few nanometers in height is compromised by the limited escape depth of the chloride ions generated in the purification step. In contrast, chlorine atoms can be efficiently and completely removed from PtCl2 deposits using AH, regardless of the thickness of the deposit. Although AH was found to be extremely effective at chemically purifying PtCl2 deposits, its viability as a FEBID purification strategy is compromised by the mobility of transient Pt–H species formed during the purification process. Scanning electron microscopy data show that this results in the formation of porous structures and can even cause the deposit to lose structural integrity. However, this phenomenon suggests that the use of AH may be a useful strategy to create high surface area Pt catalysts and may reverse the effects of sintering. In marked contrast to the effect observed with AH, densification of the structure was observed during the postdeposition purification of PtCx deposits created from MeCpPtMe3 using atomic oxygen (AO), although the limited penetration depth of AO restricts its effectiveness as a purification strategy to relatively small nanostructures. PMID:29234576

  11. Fast, high temperature and thermolabile GC--MS in supersonic molecular beams

    NASA Astrophysics Data System (ADS)

    Dagan, Shai; Amirav, Aviv

    1994-05-01

    This work describes and evaluates the coupling of a fast gas chromatograph (GC) based on a short column and high carrier gas flow rate to a supersonic molecular beam mass spectrometer (MS). A 50 cm long megabore column serves for fast GC separation and connects the injector to the supersonic nozzle source. Sampling is achieved with a conventional syringe based splitless sample injection. The injector contains no septum and is open to the atmosphere. The linear velocity of the carrier gas is controlled by a by-pass (make-up) gas flow introduced after the column and prior to the supersonic nozzle. The supersonic expansion serves as a jet separator and the skimmed supersonic molecular beam (SMB) is highly enriched with the heavier organic molecules. The supersonic molecular beam constituents are ionized either by electron impact (EI) or hyperthermal surface ionization (HSI) and mass analyzed. A 1 s fast GC--MS of four aromatic molecules in methanol is demonstrated and some fundamental aspects of fast GC--MS with time limit constraints are outlined. The flow control (programming) of the speed of analysis is shown and the analysis of thermolabile and relatively non-volatile molecules is demonstrated and discussed. The tail-free, fast GC--MS of several mixtures is shown and peak tailing of caffeine is compared with that of conventional GC--MS. The improvement of the peak shapes with the SMB--MS is analyzed with the respect to the elimination of thermal vacuum chamber background. The extrapolated minimum detected amount was about 400 ag of anthracence-d10, with an elution time which was shorter than 2s. Repetitive injections could be performed within less than 10 s. The fast GC--MS in SMB seems to be ideal for fast target compound analysis even in real world, complex mixtures. The few seconds GC--MS separation and quantification of lead (as tetraethyllead) in gasoline, caffeine in coffee, and codeine in a drug is demonstrated. Controlled HSI selectivity is demonstrated in

  12. Nanomanufacturing of titania interfaces with controlled structural and functional properties by supersonic cluster beam deposition

    NASA Astrophysics Data System (ADS)

    Podestà, Alessandro; Borghi, Francesca; Indrieri, Marco; Bovio, Simone; Piazzoni, Claudio; Milani, Paolo

    2015-12-01

    Great emphasis is placed on the development of integrated approaches for the synthesis and the characterization of ad hoc nanostructured platforms, to be used as templates with controlled morphology and chemical properties for the investigation of specific phenomena of great relevance in interdisciplinary fields such as biotechnology, medicine, and advanced materials. Here, we discuss the crucial role and the advantages of thin film deposition strategies based on cluster-assembling from supersonic cluster beams. We select cluster-assembled nanostructured titania (ns-TiO2) as a case study to demonstrate that accurate control over morphological parameters can be routinely achieved, and consequently, over several relevant interfacial properties and phenomena, like surface charging in a liquid electrolyte, and proteins and nanoparticles adsorption. In particular, we show that the very good control of nanoscale morphology is obtained by taking advantage of simple scaling laws governing the ballistic deposition regime of low-energy, mass-dispersed clusters with reduced surface mobility.

  13. Nanomanufacturing of titania interfaces with controlled structural and functional properties by supersonic cluster beam deposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Podestà, Alessandro, E-mail: alessandro.podesta@mi.infn.it, E-mail: pmilani@mi.infn.it; Borghi, Francesca; Indrieri, Marco

    Great emphasis is placed on the development of integrated approaches for the synthesis and the characterization of ad hoc nanostructured platforms, to be used as templates with controlled morphology and chemical properties for the investigation of specific phenomena of great relevance in interdisciplinary fields such as biotechnology, medicine, and advanced materials. Here, we discuss the crucial role and the advantages of thin film deposition strategies based on cluster-assembling from supersonic cluster beams. We select cluster-assembled nanostructured titania (ns-TiO{sub 2}) as a case study to demonstrate that accurate control over morphological parameters can be routinely achieved, and consequently, over several relevantmore » interfacial properties and phenomena, like surface charging in a liquid electrolyte, and proteins and nanoparticles adsorption. In particular, we show that the very good control of nanoscale morphology is obtained by taking advantage of simple scaling laws governing the ballistic deposition regime of low-energy, mass-dispersed clusters with reduced surface mobility.« less

  14. The isotype ZnO/SiC heterojunction prepared by molecular beam epitaxy--A chemical inert interface with significant band discontinuities.

    PubMed

    Zhang, Yufeng; Lin, Nanying; Li, Yaping; Wang, Xiaodan; Wang, Huiqiong; Kang, Junyong; Wilks, Regan; Bär, Marcus; Mu, Rui

    2016-03-15

    ZnO/SiC heterojunctions show great potential for various optoelectronic applications (e.g., ultraviolet light emitting diodes, photodetectors, and solar cells). However, the lack of a detailed understanding of the ZnO/SiC interface prevents an efficient and rapid optimization of these devices. Here, intrinsic (but inherently n-type) ZnO were deposited via molecular beam epitaxy on n-type 6H-SiC single crystalline substrates. The chemical and electronic structure of the ZnO/SiC interfaces were characterized by ultraviolet/x-ray photoelectron spectroscopy and x-ray excited Auger electron spectroscopy. In contrast to the ZnO/SiC interface prepared by radio frequency magnetron sputtering, no willemite-like zinc silicate interface species is present at the MBE-ZnO/SiC interface. Furthermore, the valence band offset at the abrupt ZnO/SiC interface is experimentally determined to be (1.2 ± 0.3) eV, suggesting a conduction band offset of approximately 0.8 eV, thus explaining the reported excellent rectifying characteristics of isotype ZnO/SiC heterojunctions. These insights lead to a better comprehension of the ZnO/SiC interface and show that the choice of deposition route might offer a powerful means to tailor the chemical and electronic structures of the ZnO/SiC interface, which can eventually be utilized to optimize related devices.

  15. Brewster-angle 50%-50% beam splitter for p-polarized infrared light using a high-index quarter-wave layer deposited on a low-index prism.

    PubMed

    Azzam, R M A

    2017-08-10

    A quarter-wave layer (QWL) of high refractive index, which is deposited on a transparent prism of low refractive index, can be designed to split an incident p-polarized light beam at the Brewster angle (BA) of the air-substrate interface into p-polarized reflected and transmitted beams of equal intensity (50% each) that travel in orthogonal directions. For reflection of p-polarized light at the BA, the supported QWL functions as a free-standing (unsupported) pellicle. An exemplary design is presented that uses Si x Ge 1-x QWL deposited on an IRTRAN1 prism for applications (such as Michelson and Mach-Zehnder interferometry) with a variable compositional fraction x in the 2-6 μm mid-IR spectral range.

  16. Structural and mechanical properties of hydroxyapatite coatings formed by ion-beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Zykova, A.; Safonov, V.; Dudin, S.; Yakovin, S.; Donkov, N.; Ghaemi, M. H.; Szkodo, M.; Antoszkiewicz, M.; Szyfelbain, M.; Czaban, A.

    2018-03-01

    The ion-beam assisted deposition (IBAD) is an advanced method capable of producing crystalline coatings at low temperatures. We determined the characteristics of hydroxyapatite Ca10(PO4)6(OH)2 target and coatings formed by IBAD using X-ray photoemission spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and energy dispersive X-ray (EDX). The composition of the coatings’ cross-section and surface was close to those of the target. The XPS spectra showed that the binding energy values of Ca (2p1/2, 2p3/2), P (2p3/2), and O 1s levels are related to the hydroxyapatite phase. The coatings demonstrate an optimal H/E ratio, and a good resistance to scratch tests.

  17. Wavelength-scale photonic-crystal laser formed by electron-beam-induced nano-block deposition.

    PubMed

    Seo, Min-Kyo; Kang, Ju-Hyung; Kim, Myung-Ki; Ahn, Byeong-Hyeon; Kim, Ju-Young; Jeong, Kwang-Yong; Park, Hong-Gyu; Lee, Yong-Hee

    2009-04-13

    A wavelength-scale cavity is generated by printing a carbonaceous nano-block on a photonic-crystal waveguide. The nanometer-size carbonaceous block is grown at a pre-determined region by the electron-beam-induced deposition method. The wavelength-scale photonic-crystal cavity operates as a single mode laser, near 1550 nm with threshold of approximately 100 microW at room temperature. Finite-difference time-domain computations show that a high-quality-factor cavity mode is defined around the nano-block with resonant wavelength slightly longer than the dispersion-edge of the photonic-crystal waveguide. Measured near-field images exhibit photon distribution well-localized in the proximity of the printed nano-block. Linearly-polarized emission along the vertical direction is also observed.

  18. Structural and electrical characteristics of CoGe(2) alloy films deposited heteroepitaxially on GaAs(100) using partially ionized beam deposition

    NASA Astrophysics Data System (ADS)

    Mello, Kevin Edward

    The partially ionized beam deposition system was utilized to deposit CoGesb2 thin films heteroepitaxially on GaAs(100) substrates in a conventional vacuum. The CoGesb2 films were structurally characterized using conventional 2theta diffraction, reflection X-ray pole figure analysis, and alpha particle channeling techniques. Three distinct crystallographic relationships of the CoGesb2 films to the GaAs(100) substrates were observed, dependent upon the substrate temperature and Gesp+ ion energy used during deposition. The CoGesb2(001) (100)sp°GaAs(100) (001) orientation, which has the smallest lattice mismatch to GaAs(100), was found to occur for depositions performed at a substrate temperature during deposition near 280sp°C with approximately 1160 eV Gesp+ ions. Lowering the substrate temperature or reducing the Gesp+ ion energy results in CoGesb2(100) orientation domination with CoGe2(100) (010)sp°GaAs(100) (001) and CoGesb2(100) (001)sp°GaAs(100) (001). Substrate temperature alone was seen to produce only the CoGesb2(100) orientation. For CoGesb2(001) films, additional energy was required from Gesp+ ions in the evaporant stream. Angular yield profiles for axial Hesp{++} ion channeling yielded values for the minimum yield, Ysb{min}, of 25% for the CoGesb2(001) orientation and 34% for the CoGesb2(100) orientation. The critical angle for channeling, Psisb{c}, was measured to be 1.0sp° for both orientations. Channeling theory was used to predict the minimum yield and critical angle for each orientation. The theoretical values agreed qualitatively with the experimentally measured values, and the theory correctly predicted the lower minimum yield for the CoGesb2(001) orientation. Annealing the films to allow for epitaxial grain growth resulted in orientation selection of CoGesb2(001) at the expense of CoGesb2(100), exposing CoGesb2(100) as a metastable orientation. The CoGesb2(001) films were stable up to 500sp°C, 30 minute anneals, showing no orientation changes

  19. Numerical simulations of energy deposition caused by 50 MeV—50 TeV proton beams in copper and graphite targets

    NASA Astrophysics Data System (ADS)

    Nie, Y.; Schmidt, R.; Chetvertkova, V.; Rosell-Tarragó, G.; Burkart, F.; Wollmann, D.

    2017-08-01

    The conceptual design of the Future Circular Collider (FCC) is being carried out actively in an international collaboration hosted by CERN, for the post-Large Hadron Collider (LHC) era. The target center-of-mass energy of proton-proton collisions for the FCC is 100 TeV, nearly an order of magnitude higher than for LHC. The existing CERN accelerators will be used to prepare the beams for FCC. Concerning beam-related machine protection of the whole accelerator chain, it is critical to assess the consequences of beam impact on various accelerator components in the cases of controlled and uncontrolled beam losses. In this paper, we study the energy deposition of protons in solid copper and graphite targets, since the two materials are widely used in magnets, beam screens, collimators, and beam absorbers. Nominal injection and extraction energies in the hadron accelerator complex at CERN were selected in the range of 50 MeV-50 TeV. Three beam sizes were studied for each energy, corresponding to typical values of the betatron function. Specifically for thin targets, comparisons between fluka simulations and analytical Bethe equation calculations were carried out, which showed that the damage potential of a few-millimeter-thick graphite target and submillimeter-thick copper foil can be well estimated directly by the Bethe equation. The paper provides a valuable reference for the quick evaluation of potential damage to accelerator elements over a large range of beam parameters when beam loss occurs.

  20. Changes in the frequency distribution of energy deposited in short pathlengths as a function of energy degradation of the primary beam.

    NASA Technical Reports Server (NTRS)

    Baily, N. A.; Steigerwalt, J. E.; Hilbert, J. W.

    1972-01-01

    The frequency distributions of event size in the deposition of energy over small pathlengths have been measured after penetration of 44.3 MeV protons through various thicknesses of tissue-equivalent material. Results show that particle energy straggling of an initially monoenergetic proton beam after passage through an absorber causes the frequency distributions of energy deposited in short pathlengths of low atomic number materials to remain broad. In all cases investigated, the ratio of the most probable to the average energy losses has been significantly less than unity.

  1. Iron-Terephthalate Coordination Network Thin Films Through In-Situ Atomic/Molecular Layer Deposition.

    PubMed

    Tanskanen, A; Karppinen, M

    2018-06-12

    Iron terephthalate coordination network thin films can be fabricated using the state-of-the-art gas-phase atomic/molecular layer deposition (ALD/MLD) technique in a highly controlled manner. Iron is an Earth-abundant and nonhazardous transition metal, and with its rich variety of potential applications an interesting metal constituent for the inorganic-organic coordination network films. Our work underlines the role of the metal precursor used when aiming at in-situ ALD/MLD growth of crystalline inorganic-organic thin films. We obtain crystalline iron terephthalate films when FeCl 3 is employed as the iron source whereas depositions based on the bulkier Fe(acac) 3 precursor yield amorphous films. The chemical composition and structure of the films are investigated with GIXRD, XRR, FTIR and XPS.

  2. Hybrid Physical Vapor Deposition Instrument for Advanced Functional Multilayers and Materials

    DTIC Science & Technology

    2016-04-27

    Hybrid Physical Vapor Deposition Instrument for Advanced Functional Multilayers and Materials PI Maria received support to construct a physical...vapor deposition (PVD) system that combines electron beam (e- beam) evaporation, magnetron sputtering, pulsed laser ablation, and ion-assisted deposition ...The instrumentation enables clean, uniform, and rapid deposition of a wide variety of metallic, semiconducting, and ceramic thin films with

  3. The effect of laser energy on V2O5 thin film growth prepared by laser assisted molecular beam deposition

    NASA Astrophysics Data System (ADS)

    Abdel Samad, B.; Ashrit, P. V.

    2014-09-01

    Vanadium pentoxide V2O5 thin films were grown on glass substrates by the LAMBD deposition system with different laser energies. The structure, composition and optical properties of the films have been investigated with atomic force microscopy, x-ray photoemission spectroscopy, ellipsometry and the transmittance analysis. Upon the increase of laser energy, the results showed that the changes in the optical constants are consistent with the thickness changes of the film. The refractive index increases and the absorption coefficient increases when the laser energy increases. The AFM analysis showed a change of the roughness and structure of the deposited films at different laser energies. The prepared films deposited by LAMBD showed interesting properties with correct V2O5 phase without need of annealing after deposition.

  4. Mechanical properties improvement of pulsed laser-deposited hydroxyapatite thin films by high energy ion-beam implantation

    NASA Astrophysics Data System (ADS)

    Nelea, V.; Pelletier, H.; Müller, D.; Broll, N.; Mille, P.; Ristoscu, C.; Mihailescu, I. N.

    2002-01-01

    Major problems in the hydroxyapatite (HA), Ca 5(PO 4) 3OH, thin films processing still keep the poor mechanical properties and the lack in density. We present a study on the feasibility of high energy ion-beam implantation technique to densify HA bioceramic films. Crystalline HA films were grown by pulsed laser deposition (PLD) method using an excimer KrF ∗ laser ( λ=248 nm, τ FWHM≥20 ns). The films were deposited on Ti-5Al-2.5Fe alloys substrates previously coated with a ceramic TiN buffer layer. After deposition the films were implanted with Ar + ions at high energy. Optical microscopy (OM), white light confocal microscopy (WLCM), grazing incidence X-ray diffraction (GIXRD) and Berkovich nanoindentation in normal and scratch options have been applied for the characterization of the obtained structures. We put into evidence an enhancement of the mechanical characteristics after implantation, while GIXRD measurements confirm that the crystalline structure of HA phase is preserved. The improvement in mechanical properties is an effect of a densification after ion treatment as a result of pores elimination and grains regrowth.

  5. Freeform Deposition Method for Coolant Channel Closeout

    NASA Technical Reports Server (NTRS)

    Gradl, Paul R. (Inventor); Reynolds, David Christopher (Inventor); Walker, Bryant H. (Inventor)

    2017-01-01

    A method is provided for fabricating a coolant channel closeout jacket on a structure having coolant channels formed in an outer surface thereof. A line of tangency relative to the outer surface is defined for each point on the outer surface. Linear rows of a metal feedstock are directed towards and deposited on the outer surface of the structure as a beam of weld energy is directed to the metal feedstock so-deposited. A first angle between the metal feedstock so-directed and the line of tangency is maintained in a range of 20-90.degree.. The beam is directed towards a portion of the linear rows such that less than 30% of the cross-sectional area of the beam impinges on a currently-deposited one of the linear rows. A second angle between the beam and the line of tangency is maintained in a range of 5-65 degrees.

  6. 3D magnetic nanostructures grown by focused electron and ion beam induced deposition

    NASA Astrophysics Data System (ADS)

    Fernandez-Pacheco, Amalio

    Three-dimensional nanomagnetism is an emerging research area, where magnetic nanostructures extend along the whole space, presenting novel functionalities not limited to the substrate plane. The development of this field could have a revolutionary impact in fields such as electronics, the Internet of Things or bio-applications. In this contribution, I will show our recent work on 3D magnetic nanostructures grown by focused electron and ion beam induced deposition. This 3D nano-printing techniques, based on the local chemical vapor deposition of a gas via the interaction with electrons and ions, makes the fabrication of complex 3D magnetic nanostructures possible. First, I will show how by exploiting different growth regimes, suspended Cobalt nanowires with modulated diameter can be patterned, with potential as domain wall devices. Afterwards, I will show recent results where the synthesis of Iron-Gallium alloys can be exploited in the field of artificial multiferroics. Moreover, we are developing novel methodologies combining physical vapor deposition and 3D nano-printing, creating Permalloy 3D nanostrips with controllable widths and lengths up to a few microns. This approach has been extended to more complex geometries by exploiting advanced simulation growth techniques combining Monte Carlo and continuum model methods. Throughout the talk, I will show the methodology we are following to characterize 3D magnetic nanostructures, by combining magneto-optical Kerr effect, scanning probe microscopy and electron and X-R magnetic imaging, and I will highlight some of the challenges and opportunities when studying these structures. I acknowledge funding from EPSRC and the Winton Foundation.

  7. Molecular beam epitaxy growth of niobium oxides by solid/liquid state oxygen source and lithium assisted metal-halide chemistry

    NASA Astrophysics Data System (ADS)

    Tellekamp, M. Brooks; Greenlee, Jordan D.; Shank, Joshua C.; Doolittle, W. Alan

    2015-09-01

    In order to consistently grow high quality niobium oxides and lithium niobium oxides, a novel solid/liquid state oxygen source, LiClO4, has been implemented in a molecular beam epitaxy (MBE) system. LiClO4 is shown to decompose into both molecular and atomic oxygen upon heating. This allows oxidation rates similar to that of molecular oxygen but at a reduced overall beam flux, quantified by in situ Auger analysis. LiClO4 operation is decomposition limited to less than 400 °C, and other material limitations are identified. The design of a custom near-ambient NbCl5 effusion cell is presented, which improves both short and long term stability. Films of Nb oxidation state +2, +3, and +5 are grown using these new tools, including the multi-functional sub-oxide LiNbO2.

  8. A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sharma, Nandlal; Reuter, Dirk

    2017-11-01

    Two vertically stacked quantum dots that are electronically coupled, so called quantum dot molecules, are of great interest for the realization of solid state building blocks for quantum communication networks. We present a modified gradient approach to realize InAs quantum dot molecules with a low areal density so that single quantum dot molecules can be optically addressed. The individual quantum dot layers were prepared by solid source molecular beam epitaxy depositing InAs on GaAs(100). The bottom quantum dot layer has been grown without substrate rotation resulting in an In-gradient across the surface, which translated into a density gradient with low quantum dot density in a certain region of the wafer. For the top quantum dot layer, separated from the bottom quantum dot layer by a 6 nm thick GaAs barrier, various InAs amounts were deposited without an In-gradient. In spite of the absence of an In-gradient, a pronounced density gradient is observed for the top quantum dots. Even for an In-amount slightly below the critical thickness for a single dot layer, a density gradient in the top quantum dot layer, which seems to reproduce the density gradient in the bottom layer, is observed. For more or less In, respectively, deviations from this behavior occur. We suggest that the obvious influence of the bottom quantum dot layer on the growth of the top quantum dots is due to the strain field induced by the buried dots.

  9. Characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lo, Ikai; Pang, Wen-Yuan; Hsu, Yu-Chi

    2013-06-15

    The characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy on LiAlO{sub 2} substrate was studied by cathodoluminescence and photoluminescence measurements. We demonstrated that the cathodoluminescence from oblique semi-polar surfaces of mushroom-shaped GaN was much brighter than that from top polar surface due to the reduction of polarization field on the oblique semi-polar surfaces. It implies that the oblique semi-polar surface is superior for the light-emitting surface of wurtzite nano-devices.

  10. Proof of principle of helium-beam radiography using silicon pixel detectors for energy deposition measurement, identification, and tracking of single ions.

    PubMed

    Gehrke, Tim; Gallas, Raya; Jäkel, Oliver; Martišíková, Maria

    2018-02-01

    Hadron therapy has the capability to provide a high dose conformation to tumor regions. However, it requires an accurate target positioning. Thus, the precise monitoring of the patient's anatomical positioning during treatment is desirable. For this purpose, hadron-beam radiography with protons (pRad) and ions (iRad) could be an attractive tool complementing the conventional imaging technologies. On the pathway to an envisaged clinical application, several challenges have to be addressed. Among them are achieving the desired spatial resolution in the presence of multiple Coulomb scattering (MCS), performing radiographs with a sufficient thickness resolution at clinically applicable dose levels, and the search for combinations of particularly suitable hadrons and detectors. These topics are investigated in this work for a detection system based on silicon pixel detectors. A method of iRad based on energy deposition measurements in thin layers is introduced. It exploits a detection system consisting of three parallel silicon pixel detectors, which also enables particle tracking and identification. Helium ions, which exhibit less pronounced MCS than protons, were chosen as imaging radiation. A PMMA phantom with a mean water-equivalent thickness (WET) of 192 mm, containing maximal WET-variations of ±6 mm, was imaged with a 173 MeV/u helium ion beam at the Heidelberg Ion-Beam Therapy Center. WET-differences in form of 2.3 mm × 2.3 mm steps were aimed to be visualized and resolved in images of the energy deposition measured behind the phantom. The detection system was placed downstream of the imaged object in order to detect single ions leaving it. The combination of the measured information on energy deposition, ion type, and the track behind the phantom was used for the image formation, employing a self-developed data-processing procedure. It was shown that helium-beam radiography is feasible with the reported detection system. The introduced data

  11. Comparisons between tokamak fueling of gas puffing and supersonic molecular beam injection in 2D simulations

    DOE PAGES

    Zhou, Y. L.; Wang, Z. H.; Xu, X. Q.; ...

    2015-01-09

    Plasma fueling with high efficiency and deep injection is very important to enable fusion power performance requirements. It is a powerful and efficient way to study neutral transport dynamics and find methods of improving the fueling performance by doing large scale simulations. Furthermore, two basic fueling methods, gas puffing (GP) and supersonic molecular beam injection (SMBI), are simulated and compared in realistic divertor geometry of the HL-2A tokamak with a newly developed module, named trans-neut, within the framework of BOUT++ boundary plasma turbulence code [Z. H. Wang et al., Nucl. Fusion 54, 043019 (2014)]. The physical model includes plasma density,more » heat and momentum transport equations along with neutral density, and momentum transport equations. In transport dynamics and profile evolutions of both plasma and neutrals are simulated and compared between GP and SMBI in both poloidal and radial directions, which are quite different from one and the other. It finds that the neutrals can penetrate about four centimeters inside the last closed (magnetic) flux surface during SMBI, while they are all deposited outside of the LCF during GP. Moreover, it is the radial convection and larger inflowing flux which lead to the deeper penetration depth of SMBI and higher fueling efficiency compared to GP.« less

  12. Comparisons between tokamak fueling of gas puffing and supersonic molecular beam injection in 2D simulations

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhou, Y. L.; Wang, Z. H.; Xu, X. Q.

    Plasma fueling with high efficiency and deep injection is very important to enable fusion power performance requirements. It is a powerful and efficient way to study neutral transport dynamics and find methods of improving the fueling performance by doing large scale simulations. Furthermore, two basic fueling methods, gas puffing (GP) and supersonic molecular beam injection (SMBI), are simulated and compared in realistic divertor geometry of the HL-2A tokamak with a newly developed module, named trans-neut, within the framework of BOUT++ boundary plasma turbulence code [Z. H. Wang et al., Nucl. Fusion 54, 043019 (2014)]. The physical model includes plasma density,more » heat and momentum transport equations along with neutral density, and momentum transport equations. In transport dynamics and profile evolutions of both plasma and neutrals are simulated and compared between GP and SMBI in both poloidal and radial directions, which are quite different from one and the other. It finds that the neutrals can penetrate about four centimeters inside the last closed (magnetic) flux surface during SMBI, while they are all deposited outside of the LCF during GP. Moreover, it is the radial convection and larger inflowing flux which lead to the deeper penetration depth of SMBI and higher fueling efficiency compared to GP.« less

  13. Comparisons between tokamak fueling of gas puffing and supersonic molecular beam injection in 2D simulations

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhou, Y. L.; Southwestern Institute of Physics, Chengdu 610041; Wang, Z. H., E-mail: zhwang@swip.ac.cn

    Plasma fueling with high efficiency and deep injection is very important to enable fusion power performance requirements. It is a powerful and efficient way to study neutral transport dynamics and find methods of improving the fueling performance by doing large scale simulations. Two basic fueling methods, gas puffing (GP) and supersonic molecular beam injection (SMBI), are simulated and compared in realistic divertor geometry of the HL-2A tokamak with a newly developed module, named trans-neut, within the framework of BOUT++ boundary plasma turbulence code [Z. H. Wang et al., Nucl. Fusion 54, 043019 (2014)]. The physical model includes plasma density, heatmore » and momentum transport equations along with neutral density, and momentum transport equations. Transport dynamics and profile evolutions of both plasma and neutrals are simulated and compared between GP and SMBI in both poloidal and radial directions, which are quite different from one and the other. It finds that the neutrals can penetrate about four centimeters inside the last closed (magnetic) flux surface during SMBI, while they are all deposited outside of the LCF during GP. It is the radial convection and larger inflowing flux which lead to the deeper penetration depth of SMBI and higher fueling efficiency compared to GP.« less

  14. Hybrid Physical Vapor Deposition Instrument for Advanced Functional Multilayers and Materials

    DTIC Science & Technology

    2016-04-27

    Hybrid Physical Vapor Deposition Instrument for Advanced Functional Multilayers and Materials PI Maria received support to construct a physical... vapor deposition (PVD) system that combines electron beam (e- beam) evaporation, magnetron sputtering, pulsed laser ablation, and ion-assisted deposition ...peer-reviewed journals: Number of Papers published in non peer-reviewed journals: Final Report: Hybrid Physical Vapor Deposition Instrument for Advanced

  15. Confined energy distribution for charged particle beams

    DOEpatents

    Jason, Andrew J.; Blind, Barbara

    1990-01-01

    A charged particle beam is formed to a relatively larger area beam which is well-contained and has a beam area which relatively uniformly deposits energy over a beam target. Linear optics receive an accelerator beam and output a first beam with a first waist defined by a relatively small size in a first dimension normal to a second dimension. Nonlinear optics, such as an octupole magnet, are located about the first waist and output a second beam having a phase-space distribution which folds the beam edges along the second dimension toward the beam core to develop a well-contained beam and a relatively uniform particle intensity across the beam core. The beam may then be expanded along the second dimension to form the uniform ribbon beam at a selected distance from the nonlinear optics. Alternately, the beam may be passed through a second set of nonlinear optics to fold the beam edges in the first dimension. The beam may then be uniformly expanded along the first and second dimensions to form a well-contained, two-dimensional beam for illuminating a two-dimensional target with a relatively uniform energy deposition.

  16. Comparison of fan beam, slit-slat and multi-pinhole collimators for molecular breast tomosynthesis

    NASA Astrophysics Data System (ADS)

    van Roosmalen, Jarno; Beekman, Freek J.; Goorden, Marlies C.

    2018-05-01

    Recently, we proposed and optimized dedicated multi-pinhole molecular breast tomosynthesis (MBT) that images a lightly compressed breast. As MBT may also be performed with other types of collimators, the aim of this paper is to optimize MBT with fan beam and slit-slat collimators and to compare its performance to that of multi-pinhole MBT to arrive at a truly optimized design. Using analytical expressions, we first optimized fan beam and slit-slat collimator parameters to reach maximum sensitivity at a series of given system resolutions. Additionally, we performed full system simulations of a breast phantom containing several tumours for the optimized designs. We found that at equal system resolution the maximum achievable sensitivity increases from pinhole to slit-slat to fan beam collimation with fan beam and slit-slat MBT having on average a 48% and 20% higher sensitivity than multi-pinhole MBT. Furthermore, by inspecting simulated images and applying a tumour-to-background contrast-to-noise (TB-CNR) analysis, we found that slit-slat collimators underperform with respect to the other collimator types. The fan beam collimators obtained a similar TB-CNR as the pinhole collimators, but the optimum was reached at different system resolutions. For fan beam collimators, a 6–8 mm system resolution was optimal in terms of TB-CNR, while with pinhole collimation highest TB-CNR was reached in the 7–10 mm range.

  17. Comparison of fan beam, slit-slat and multi-pinhole collimators for molecular breast tomosynthesis.

    PubMed

    van Roosmalen, Jarno; Beekman, Freek J; Goorden, Marlies C

    2018-05-16

    Recently, we proposed and optimized dedicated multi-pinhole molecular breast tomosynthesis (MBT) that images a lightly compressed breast. As MBT may also be performed with other types of collimators, the aim of this paper is to optimize MBT with fan beam and slit-slat collimators and to compare its performance to that of multi-pinhole MBT to arrive at a truly optimized design. Using analytical expressions, we first optimized fan beam and slit-slat collimator parameters to reach maximum sensitivity at a series of given system resolutions. Additionally, we performed full system simulations of a breast phantom containing several tumours for the optimized designs. We found that at equal system resolution the maximum achievable sensitivity increases from pinhole to slit-slat to fan beam collimation with fan beam and slit-slat MBT having on average a 48% and 20% higher sensitivity than multi-pinhole MBT. Furthermore, by inspecting simulated images and applying a tumour-to-background contrast-to-noise (TB-CNR) analysis, we found that slit-slat collimators underperform with respect to the other collimator types. The fan beam collimators obtained a similar TB-CNR as the pinhole collimators, but the optimum was reached at different system resolutions. For fan beam collimators, a 6-8 mm system resolution was optimal in terms of TB-CNR, while with pinhole collimation highest TB-CNR was reached in the 7-10 mm range.

  18. Ion beam collimating grid to reduce added defects

    DOEpatents

    Lindquist, Walter B.; Kearney, Patrick A.

    2003-01-01

    A collimating grid for an ion source located after the exit grid. The collimating grid collimates the ion beamlets and disallows beam spread and limits the beam divergence during transients and steady state operation. The additional exit or collimating grid prevents beam divergence during turn-on and turn-off and prevents ions from hitting the periphery of the target where there is re-deposited material or from missing the target and hitting the wall of the vessel where there is deposited material, thereby preventing defects from being deposited on a substrate to be coated. Thus, the addition of a collimating grid to an ion source ensures that the ion beam will hit and be confined to a specific target area.

  19. SU-F-T-147: An Alternative Parameterization of Scatter Behavior Allows Significant Reduction of Beam Characterization for Pencil Beam Proton Therapy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Van den Heuvel, F; Fiorini, F; George, B

    2016-06-15

    Purpose: 1) To describe the characteristics of pencil beam proton dose deposition kernels in a homogenous medium using a novel parameterization. 2) To propose a method utilizing this novel parametrization to reduce the measurements and pre-computation required in commissioning a pencil beam proton therapy system. Methods: Using beam data from a clinical, pencil beam proton therapy center, Monte Carlo simulations were performed to characterize the dose depositions at a range of energies from 100.32 to 226.08 MeV in 3.6MeV steps. At each energy, the beam is defined at the surface of the phantom by a two-dimensional Normal distribution. Using FLUKA,more » the in-medium dose distribution is calculated in 200×200×350 mm cube with 1 mm{sup 3} tally volumes. The calculated dose distribution in each 200×200 slice perpendicular to the beam axis is then characterized using a symmetric alpha-stable distribution centered on the beam axis. This results in two parameters, α and γ, that completely describe shape of the distribution. In addition, the total dose deposited on each slice is calculated. The alpha-stable parameters are plotted as function of the depth in-medium, providing a representation of dose deposition along the pencil beam. We observed that these graphs are isometric through a scaling of both abscissa and ordinate map the curves. Results: Using interpolation of the scaling factors of two source curves representative of different beam energies, we predicted the parameters of a third curve at an intermediate energy. The errors are quantified by the maximal difference and provide a fit better than previous methods. The maximal energy difference between the source curves generating identical curves was 21.14MeV. Conclusion: We have introduced a novel method to parameterize the in-phantom properties of pencil beam proton dose depositions. For the case of the Knoxville IBA system, no more than nine pencil beams have to be fully characterized.« less

  20. Neutron molecular spectroscopy using a white beam time-of-flight spectrometer

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chen, S.; Jorgensen, J.D.; Berney, C.V.

    1978-01-01

    An inverted-geometry white beam TOF neutron spectrometer using an extended graphite crystal analyzer was constructed at the CP-5 reactor at Argonne. A performance test of the spectrometer for incoherent inelastic scattering studies was made with five selected molecular solids. The results demonstrate the utility of such a spectrometer for investigation of lattice vibrational spectra of hydrogenous compounds in the energy range 0--400 cm/sup -1/. We describe design considerations and energy resolution of the spectrometer, and discuss observed low-frequency spectra of acetic acid (CH/sub 3/COOH, CD/sub 3/COOH, and CH/sub 3/COOD), cyclohexane, and cyclopentane.

  1. Flight measurement of molecular contaminant deposition

    NASA Astrophysics Data System (ADS)

    Hall, David F.

    1994-10-01

    A spacecraft was instrumented with four temperature controlled quartz crystal microbalance (TQCM) contamination detectors. One TQCM, located inside the vehicle, recorded contaminant deposition that was orders of magnitude higher than did the three TQCMs located in various positions outside the vehicle. The deposition rate on the interior TQCM varied with the temperatures of interior spacecraft cavity surfaces. In particular, there is clear evidence of condensation on these surfaces and re-evaporation from these surfaces by previously outgassed contaminant molecules. The e-folding time constants of the deposition on two of the exterior TQCMs held at -50 degree(s)C are approximately 1.4 years, with extrapolated final equivalent thickness of the deposition in the 20 - 25 nm (200 - 250 angstroms) range. The third exterior TQCM, which has a significant field of view of a segmented thermal blanket, collected contamination at a greater rate. The data enable the ranking of the several contamination transport mechanisms at work and the drawing of general recommendations for spacecraft design.

  2. Multilayer coating of optical substrates by ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Daniel, M. V.; Demmler, M.

    2017-10-01

    Ion beam sputtering is well established in research and industry, despite its relatively low deposition rates compared to electron beam evaporation. Typical applications are coatings of precision optics, like filters, mirrors and beam splitter. Anti-reflective or high-reflective multilayer stacks benefit from the high mobility of the sputtered particles on the substrate surface and the good mechanical characteristics of the layers. This work gives the basic route from single layer optimization of reactive ion beam sputtered Ta2O5 and SiO2 thin films towards complex multilayer stacks for high-reflective mirrors and anti-reflective coatings. Therefore films were deposited using different oxygen flow into the deposition chamber Afterwards, mechanical (density, stress, surface morphology, crystalline phases) and optical properties (reflectivity, absorption and refractive index) were characterized. These knowledge was used to deposit a multilayer coating for a high reflective mirror.

  3. Structural Analysis of a Carbon Nitride Film Prepared by Ion-Beam-Assisted Deposition

    NASA Astrophysics Data System (ADS)

    Hayashi, Toshiyuki; Matsumuro, Akihito; Muramatsu, Mutsuo; Kohzaki, Masao; Takahashi, Yutaka; Yamaguchi, Katsumi

    1999-04-01

    The microstructure of a carbon nitride (CNx) film formed by ion-beam-assisted deposition (IBAD) was investigated by transmission electron microscopy (TEM). This film was formed on the Si (100) substrate by IBAD with an N/C transport ratio of 1. Three different spacings (0.34 nm, 0.21 nm, 0.12 nm) were observed by transmission electron diffraction (TED) and the periodic structure corresponding to the spacing of 0.34 nm was aligned perpendicular to the substrate. The bending of this plane resembled a carbon nanotube; therefore, it seemed reasonable to suppose that the CNx film obtained consisted of numerous carbon-nanotube-like structural elements grown vertically, relative to the substrate, and it also seemed appropriate that these structural elements should be termed nanotube-like carbon nitride.

  4. Direct writing of gold nanostructures with an electron beam: On the way to pure nanostructures by combining optimized deposition with oxygen-plasma treatment

    PubMed Central

    Belić, Domagoj; Shawrav, Mostafa M; Bertagnolli, Emmerich

    2017-01-01

    This work presents a highly effective approach for the chemical purification of directly written 2D and 3D gold nanostructures suitable for plasmonics, biomolecule immobilisation, and nanoelectronics. Gold nano- and microstructures can be fabricated by one-step direct-write lithography process using focused electron beam induced deposition (FEBID). Typically, as-deposited gold nanostructures suffer from a low Au content and unacceptably high carbon contamination. We show that the undesirable carbon contamination can be diminished using a two-step process – a combination of optimized deposition followed by appropriate postdeposition cleaning. Starting from the common metal-organic precursor Me2-Au-tfac, it is demonstrated that the Au content in pristine FEBID nanostructures can be increased from 30 atom % to as much as 72 atom %, depending on the sustained electron beam dose. As a second step, oxygen-plasma treatment is established to further enhance the Au content in the structures, while preserving their morphology to a high degree. This two-step process represents a simple, feasible and high-throughput method for direct writing of purer gold nanostructures that can enable their future use for demanding applications. PMID:29259868

  5. Transparent conducting ZnO-CdO thin films deposited by e-beam evaporation technique

    NASA Astrophysics Data System (ADS)

    Mohamed, H. A.; Ali, H. M.; Mohamed, S. H.; Abd El-Raheem, M. M.

    2006-04-01

    Thin films of Zn{1-x} Cd{x}O with x = 0, 0.1, 0.2, 0.3, 0.4 and 0.5 at.% were deposited by electron-beam evaporation technique. It has been found that, for as-deposited films, both the transmittance and electrical resistivity decreased with increasing the Cd content. To improve the optical and electrical properties of these films, the effect of annealing temperature and time were taken into consideration for Zn{1-x} Cd{x}O film with x = 0.2. It was found that, the optical transmittance and the electrical conductivity were improved significantly with increasing the time of annealing. At fixed temperature of 300 °C, the transmittance increased with increasing the time of annealing and reached its maximum values of 81% in the visible region and 94% in the NIR region at annealing time of 120 min. The low electrical resistivity of 3.6 × 10-3 Ω cm was achieved at the same conditions. Other parameters named free carrier concentrations, refractive index, extinction coefficient, plasma frequency, and relaxation time were studied as a function of annealing temperature and time for 20% Cd content.

  6. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Xu, Zhongguang; Khanaki, Alireza; Tian, Hao

    2016-07-25

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layersmore » were achieved. Based on an h-BN (5–6 nm)/G (26–27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ∼2.5–3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.« less

  7. Approaching the resolution limit of W-C nano-gaps using focused ion beam chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Dai, Jun; Chang, Hui; Maeda, Etsuo; Warisawa, Shin'ichi; Kometani, Reo

    2018-01-01

    Nano-gaps are fundamental building blocks for nanochannels, plasmonic nanostructures and superconducting Josephson junctions. We present a systematic study on the formation mechanism and resolution limit of W-C nano-gaps fabricated using focused-ion-beam chemical vapour deposition (FIB-CVD). First, the deposition size of the nanostructures is evaluated. The size averaged over 100 dots is 32 nm at FWHM. Line and space are also fabricated with the smallest size, having a spacing of only 5 nm at FWHM. Then, a model is developed to study the formation mechanism and provides the design basis for W-C nano-gaps. Both experimental and simulation results reveal that the shrinkage of W-C nano-gaps is accelerated as the Gaussian parts of the nano-wire profiles overlap. A Nano-gap with a length of 5 nm and height difference as high as 42 nm is synthesized. We believe that FIB-CVD opens avenues for novel functional nanodevices that can be potentially used for biosensing, photodetecting, or quantum computing.

  8. Measurement of energy deposited by charged particle beams in composite targets. [0. 5 to 28. 5 GeV

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Crase, K.; Farley, W.E.; Kruger, H.

    1977-11-03

    The energies deposited in composite targets by proton beams from 0.8 to 28.5 GeV energy and by an electron beam at 0.5 GeV energy were measured. The targets consisted of various thicknesses of /sup 238/U shower plates backed by a composite detector plate consisting of a 5-cm-thick CH/sub 2/ moderator and a 0.635-cm /sup 238/U plate. The spacing between the shower and detector plates was varied to allow different spreading of the shower between plates. Passive detectors (thermoluminescence dosimeters, Lexan fission track recorders, photographic emulsions, and removable /sup 238/U pieces) were used to measure the fission-fragment dose and the nonfissionmore » dose at various depths and radial positions in the targets. Plots and numerical values of the measured doses are presented for comparison with computer code calculations. To provide a basis for comparison of the effects of different particle beam energies, data along the beam axes are presented as specific dose (cal/g per incident integrated kJ/cm/sup 2/). In general, the higher the incident proton energy, the larger is the dose in the back of the target relative to that in the front.« less

  9. An energy-filtering device coupled to a quadrupole mass spectrometer for soft-landing molecular ions on surfaces with controlled energy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bodin, A.; Laloo, R.; Abeilhou, P.

    2013-09-15

    We have developed an energy-filtering device coupled to a quadrupole mass spectrometer to deposit ionized molecules on surfaces with controlled energy in ultra high vacuum environment. Extensive numerical simulations as well as direct measurements show that the ion beam flying out of a quadrupole exhibits a high-energy tail decreasing slowly up to several hundred eV. This energy distribution renders impossible any direct soft-landing deposition of molecular ions. To remove this high-energy tail by energy filtering, a 127° electrostatic sector and a specific triplet lenses were designed and added after the last quadrupole of a triple quadrupole mass spectrometer. The resultsmore » obtained with this energy-filtering device show clearly the elimination of the high-energy tail. The ion beam that impinges on the sample surface satisfies now the soft-landing criterion for molecular ions, opening new research opportunities in the numerous scientific domains involving charges adsorbed on insulating surfaces.« less

  10. Internal Energy Dependence of Molecular Condensation Coefficients Determined from Molecular Beam Surface Scattering Experiments

    DOE R&D Accomplishments Database

    Sibener, S. J.; Lee, Y. T.

    1978-05-01

    An experiment was performed which confirms the existence of an internal mode dependence of molecular sticking probabilities for collisions of molecules with a cold surface. The scattering of a velocity selected effusive beam of CCl{sub 4} from a 90 K CC1{sub 4} ice surface has been studied at five translational velocities and for two different internal temperatures. At a surface temperature of 90 K (approx. 99% sticking probability) a four fold increase in reflected intensity was observed for the internally excited (560 K) CC1{sub 4} relative to the room temperature (298 K) CC1{sub 4} at a translational velocity of 2.5 X 10{sup 4} cm/sec. For a surface temperature of 90 K all angular distributions were found to peak 15{sup 0} superspecularly independent of incident velocity.

  11. Titanium dioxide fine structures by RF magnetron sputter method deposited on an electron-beam resist mask

    NASA Astrophysics Data System (ADS)

    Hashiba, Hideomi; Miyazaki, Yuta; Matsushita, Sachiko

    2013-09-01

    Titanium dioxide (TiO2) has been draw attention for wide range of applications from photonic crystals for visible light range by its catalytic characteristics to tera-hertz range by its high refractive index. We present an experimental study of fabrication of fine structures of TiO2 with a ZEP electron beam resist mask followed by Ti sputter deposition techniques. A TiO2 thin layer of 150 nm thick was grown on an FTO glass substrate with a fine patterned ZEP resist mask by a conventional RF magnetron sputter method with Ti target. The deposition was carried out with argon-oxygen gases at a pressure of 5.0 x 10 -1 Pa in a chamber. During the deposition, ratio of Ar-O2 gas was kept to the ratio of 2:1 and the deposition ratio was around 0.5 Å/s to ensure enough oxygen to form TiO2 and low temperature to avoid deformation of fine pattern of the ZPU resist mask. Deposited TiO2 layers are white-transparent, amorphous, and those roughnesses are around 7 nm. Fabricated TiO2 PCs have wider TiO2 slabs of 112 nm width leaving periodic 410 x 410 nm2 air gaps. We also studied transformation of TiO2 layers and TiO2 fine structures by baking at 500 °C. XRD measurement for TiO2 shows that the amorphous TiO2 transforms to rutile and anatase forms by the baking while keeping the same profile of the fine structures. Our fabrication method can be one of a promising technique to optic devices on researches and industrial area.

  12. Fabrication of single Ga-doped ZnS nanowires as high-gain photosensors by focused ion beam deposition

    NASA Astrophysics Data System (ADS)

    Yen, Shih-Hsiang; Hung, Yu-Chen; Yeh, Ping-Hung; Su, Ya-Wen; Wang, Chiu-Yen

    2017-09-01

    ZnS nanowires were synthesized via a vapor-liquid-solid mechanism and then fabricated into a single-nanowire field-effect transistor by focused ion beam (FIB) deposition. The field-effect electrical properties of the FIB-fabricated ZnS nanowire device, namely conductivity, mobility and hole concentration, were 9.13 Ω-1 cm-1, 13.14 cm2 V-1 s-1and 4.27 × 1018 cm-3, respectively. The photoresponse properties of the ZnS nanowires were studied and the current responsivity, current gain, response time and recovery time were 4.97 × 106 A W-1, 2.43 × 107, 9 s and 24 s, respectively. Temperature-dependent I-V measurements were used to analyze the interfacial barrier height between ZnS and the FIB-deposited Pt electrode. The results show that the interfacial barrier height is as low as 40 meV. The energy-dispersive spectrometer elemental line scan shows the influence of Ga ions on the ZnS nanowire surface on the FIB-deposited Pt contact electrodes. The results of temperature-dependent I-V measurements and the elemental line scan indicate that Ga ions were doped into the ZnS nanowire, reducing the barrier height between the FIB-deposited Pt electrodes and the single ZnS nanowire. The small barrier height results in the FIB-fabricated ZnS nanowire device acting as a high-gain photosensor.

  13. Measurement of surface stay times for physical adsorption of gases. Ph.D. Thesis - Va. Univ.; [using molecular beam time of flight technique

    NASA Technical Reports Server (NTRS)

    Wilmoth, R. G.

    1973-01-01

    A molecular beam time-of-flight technique is studied as a means of determining surface stay times for physical adsorption. The experimental approach consists of pulsing a molecular beam, allowing the pulse to strike an adsorbing surface and detecting the molecular pulse after it has subsequently desorbed. The technique is also found to be useful for general studies of adsorption under nonequilibrium conditions including the study of adsorbate-adsorbate interactions. The shape of the detected pulse is analyzed in detail for a first-order desorption process. For mean stay times, tau, less than the mean molecular transit times involved, the peak of the detected pulse is delayed by an amount approximately equal to tau. For tau much greater than these transit times, the detected pulse should decay as exp(-t/tau). However, for stay times of the order of the transit times, both the molecular speed distributions and the incident pulse duration time must be taken into account.

  14. Ion beam analysis of C-13 and deuterium deposition in DIII-D and their removal by in-situ oxygen baking

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wampler, W. R.; Allen, S. L.; Brooks, N. H.

    An experiment was conducted in DIII-D to examine carbon deposition when a secondary separatrix is near the wall. The magnetic configuration for this experiment was a biased double-null, similar to that foreseen for ITER. C-13 methane was injected toroidally symmetrically near the secondary separatrix into ELMy H-mode deuterium plasmas. The resulting deposition of C-13 was determined by nuclear reaction analysis. These results show that very little of the injected C-13 was deposited at the primary separatrix, whereas a large fraction of injected C-13 was deposited close to the point of injection near the secondary separatrix. Six of the tiles weremore » put back into DIII-D, where they were baked at 350-360 degrees C for 2 h at similar to 1 kPa in a 20% O-2/80% He gas mixture. Subsequent ion beam analysis of these tiles showed that about 21% of the C-13 and 54% of the deuterium were removed by the bake.« less

  15. Scaling relations for a needle-like electron beam plasma from the self-similar behavior in beam propagation

    NASA Astrophysics Data System (ADS)

    Bai, Xiaoyan; Chen, Chen; Li, Hong; Liu, Wandong; Chen, Wei

    2017-10-01

    Scaling relations of the main parameters of a needle-like electron beam plasma (EBP) to the initial beam energy, beam current, and discharge pressures are presented. The relations characterize the main features of the plasma in three parameter space and can provide great convenience in plasma design with electron beams. First, starting from the self-similar behavior of electron beam propagation, energy and charge depositions in beam propagation were expressed analytically as functions of the three parameters. Second, according to the complete coupled theoretical model of an EBP and appropriate assumptions, independent equations controlling the density and space charges were derived. Analytical expressions for the density and charges versus functions of energy and charge depositions were obtained. Finally, with the combination of the expressions derived in the above two steps, scaling relations of the density and potential to the three parameters were constructed. Meanwhile, numerical simulations were used to test part of the scaling relations.

  16. Molecular layer deposition of polyurethane-Polymerisation at the very contact to native aluminium and copper

    NASA Astrophysics Data System (ADS)

    Fug, Frank; Petry, Adrien; Jost, Hendrik; Ahmed, Aisha; Zamanzade, Mohammad; Possart, Wulff

    2017-12-01

    Thin layers of polyurethane monomers (diol, triol, diisocyanate) are deposited from gas phase onto native aluminium and copper surfaces. According to infrared external reflection absorption spectra both alcohols undergo only weak physical interactions with both metals. The diisocyanate on the other hand reveals resistance against desorption and rich new spectral features indicate strong adhesion. Preparation of urethane layers by sequential deposition of diisocyanate and diol yields urethane linkages. Urethane is formed faster on Cu than on Al. Scanning force microscopy reveals heterogeneous layers with metal dependent morphology. They show poor resistance against tetrahydrofuran rinsing i.e. most part of the formed urethane containing molecules are removed. Nevertheless, a residue of molecules sticks on the metal. It contains strongly adsorbed isocyanates and few isocyanate units which are bonded to diol units via urethane links. Further improvement of the molecular layer deposition is necessary to achieve well-crosslinked polyurethane layers.

  17. Cyan laser diode grown by plasma-assisted molecular beam epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Turski, H., E-mail: henryk@unipress.waw.pl; Muziol, G.; Wolny, P.

    We demonstrate AlGaN-cladding-free laser diodes (LDs), operating in continuous wave (CW) mode at 482 nm grown by plasma-assisted molecular beam epitaxy (PAMBE). The maximum CW output power was 230 mW. LDs were grown on c-plane GaN substrates obtained by hydride vapor phase epitaxy. The PAMBE process was carried out in metal-rich conditions, supplying high nitrogen flux (Φ{sub N}) during quantum wells (QWs) growth. We found that high Φ{sub N} improves quality of high In content InGaN QWs. The role of nitrogen in the growth of InGaN on (0001) GaN surface as well as the influence of LDs design on threshold currentmore » density are discussed.« less

  18. RECOGNITION OF PYRENE USING MOLECULARLY-IMPRINTED ELECTROCHEMICALLY-DEPOSITED POLY (2-MERCAPTOBENZIMIDAZOLE) OR POLY(RESORCINOL) ON GOLD ELECTRODES

    EPA Science Inventory

    The feasibility of using thiol chemistry to form molecularly imprinted polymer-coated gold electrodes to measure pyrene is reported. For the first approach, poly(2-mercaptoimidazole) (2-MBI) was electrochemically deposited on gold electrodes in the presence or absence of the tem...

  19. Superconductivity in the system Mo{sub x}C{sub y}Ga{sub z}O{sub δ} prepared by focused ion beam induced deposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Weirich, P. M., E-mail: p.weirich@Physik.uni-frankfurt.de; Schwalb, C. H.; Winhold, M.

    2014-05-07

    We have prepared the new amorphous superconductor Mo{sub x}C{sub y}Ga{sub z}O{sub δ} with a maximum critical temperature T{sub c} of 3.8 K by the direct-write nano-patterning technique of focused (gallium) ion beam induced deposition (FIBID) using Mo(CO){sub 6} as precursor gas. From a detailed analysis of the temperature-dependent resistivity and the upper critical field, we found clear evidence for proximity of the samples to a disorder-induced metal-insulator transition. We observed a strong dependence of T{sub c} on the deposition parameters and identified clear correlations between T{sub c}, the localization tendency visible in the resistance data and the sample composition. By anmore » in-situ feedback-controlled optimization process in the FIB-induced growth, we were able to identify the beam parameters which lead to samples with the largest T{sub c}-value and sharpest transition into the superconducting state.« less

  20. Monolithic integration of multiple wavelength vertical-cavity surface-emitting lasers by mask molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Saito, Hideaki; Ogura, Ichiro; Sugimoto, Yoshimasa; Kasahara, Kenichi

    1995-05-01

    The monolithic incorporation and performance of vertical-cavity surface-emitting lasers (VCSELs) emitting at two distinct wavelengths, which were suited for application to wavelength division multiplexing (WDM) systems were reported. The monolithic integration of two-wavelength VCSEL arrays was achieved by using mask molecular beam epitaxy. This method can generate arrays that have the desired integration area size and wavelength separation.

  1. Organic Photovoltaic Devices Based on Oriented n-Type Molecular Films Deposited on Oriented Polythiophene Films.

    PubMed

    Mizokuro, Toshiko; Tanigaki, Nobutaka; Miyadera, Tetsuhiko; Shibata, Yousei; Koganezawa, Tomoyuki

    2018-04-01

    The molecular orientation of π-conjugated molecules has been reported to significantly affect the performance of organic photovoltaic devices (OPVs) based on molecular films. Hence, the control of molecular orientation is a key issue toward the improvement of OPV performance. In this research, oriented thin films of an n-type molecule, 3,4,9,10-Perylenetetracarboxylic Bisbenzimida-zole (PTCBI), were formed by deposition on in-plane oriented polythiophene (PT) films. Orientation of the PTCBI films was evaluated by polarized UV-vis spectroscopy and 2D-Grazing incidence X-ray diffraction. Results indicated that PTCBI molecules on PT film exhibit nearly edge-on and in-plane orientation (with molecular long axis along the substrate), whereas PTCBI molecules without PT film exhibit neither. OPVs composed of PTCBI molecular film with and without PT were fabricated and evaluated for correlation of orientation with performance. The OPVs composed of PTCBI film with PT showed higher power conversion efficiency (PCE) than that of film without PT. The experiment indicated that in-plane orientation of PTCBI molecules absorbs incident light more efficiently, leading to increase in PCE.

  2. Simultaneous ion sputter polishing and deposition

    NASA Technical Reports Server (NTRS)

    Rutledge, S.; Banks, B.; Brdar, M.

    1981-01-01

    Results of experiments to study ion beam sputter polishing in conjunction with simultaneous deposition as a mean of polishing copper surfaces are presented. Two types of simultaneous ion sputter polishing and deposition were used in these experiments. The first type utilized sputter polishing simultaneous with vapor deposition, and the second type utilized sputter polishing simultaneous with sputter deposition. The etch and deposition rates of both techniques were studied, as well as the surface morphology and surface roughness.

  3. An Investigation of Nonuniform Dose Deposition From an Electron Beam

    DTIC Science & Technology

    1994-08-01

    to electron - beam pulse. Ceramic package HIPEC Lid Electron beam Die Bond wires TLD TLD Silver epoxy 6 package cavity die TLD’s 21 3 4 5 Figure 2...these apertures was documented in a previous experiment relating to HIFX electron -beam dosimetry .2 The hardware required for this setup was a 60-cm...impurity serves 2Gregory K. Ovrebo, Steven M. Blomquist, and Steven R. Murrill, A HIFX Electron -Beam Dosimetry System, Army Research Laboratory, ARL-TR

  4. Neutral-beam deposition in large, finite-beta noncircular tokamak plasmas

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wieland, R.M.; Houlberg, W.A.

    1982-02-01

    A parametric pencil beam model is introduced for describing the attenuation of an energetic neutral beam moving through a tokamak plasma. The nonnegligible effects of a finite beam cross section and noncircular shifted plasma cross sections are accounted for in a simple way by using a smoothing algorithm dependent linearly on beam radius and by including information on the plasma flux surface geometry explicitly. The model is benchmarked against more complete and more time-consuming two-dimensional Monte Carlo calculations for the case of a large D-shaped tokamak plasma with minor radius a = 120 cm and elongation b/a = 1.6. Depositionmore » profiles are compared for deuterium beam energies of 120 to 150 keV, central plasma densities of 8 x 10/sup 13/ - 2 x 10/sup 14/ cm/sup -3/, and beam orientation ranging from perpendicular to tangential to the inside wall.« less

  5. YCo5±x thin films with perpendicular anisotropy grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sharma, S.; Hildebrandt, E.; Sharath, S. U.; Radulov, I.; Alff, L.

    2017-06-01

    The synthesis conditions of buffer-free (00l) oriented YCo5 and Y2Co17 thin films onto Al2O3 (0001) substrates have been explored by molecular beam epitaxy (MBE). The manipulation of the ratio of individual atomic beams of Yttrium, Y and Cobalt, Co, as well as growth rate variations allows establishing a thin film phase diagram. Highly textured YCo5±x thin films were stabilized with saturation magnetization of 517 emu/cm3 (0.517 MA/m), coercivity of 4 kOe (0.4 T), and anisotropy constant, K1, equal to 5.34 ×106 erg/cm3 (0.53 MJ/m3). These magnetic parameters and the perpendicular anisotropy obtained without additional underlayers make the material system interesting for application in magnetic recording devices.

  6. Effect of electron-beam deposition process variables on the film characteristics of the CrOx films

    NASA Astrophysics Data System (ADS)

    Chiu, Po-kai; Liao, Yi-Ting; Tsai, Hung-Yin; Chiang, Donyau

    2018-02-01

    The film characteristics and optical properties of the chromium oxide films on the glass substrates prepared by electron-beam deposition with different process variables were investigated. The process variables included are the various oxygen flow rates, the different applied substrate temperatures, and the preparation process in Ar or O2 surrounding environment with and without ion-assisted deposition. The optical constants of the deposited films are determined from the reflectance and transmittance measurements obtained using a spectrophotometer with wavelengths ranging from 350 nm to 2000 nm. The microstructures of the films were examined by the XRD, SEM, and XPS. The electrical conductivity was measured by a four-point probe instrument. The resulting microstructures of all the prepared films are amorphous and the features of the films are dense, uniform and no pillar structure is observed. The refractive index of deposited films decrease with oxygen flow rate increase within studied wavelengths and the extinction coefficients have the same trend in wavelengths of UV/Vis ranges. Increasing substrate temperature to 200 oC results in increase of both refractive index and extinction coefficient, but substrate temperatures below 150 oC show negligible effect on optical constants. The optical and electrical properties in the prepared CrOx films are illustrated by the analyzed XPS results, which decompose the enveloped curve of chromium electron energy status into the constituents of metal Cr, oxides CrO2 and Cr2O3. The relative occupied area contributed from metal Cr and area contributed from the other oxides can express the concentration ratio of free electron to covalent bonds in deposited films and the ratio is applied to explain the film characteristics, including the optical constants and sheet resistance.

  7. Measuring the density of a molecular cluster injector via visible emission from an electron beam.

    PubMed

    Lundberg, D P; Kaita, R; Majeski, R; Stotler, D P

    2010-10-01

    A method to measure the density distribution of a dense hydrogen gas jet is presented. A Mach 5.5 nozzle is cooled to 80 K to form a flow capable of molecular cluster formation. A 250 V, 10 mA electron beam collides with the jet and produces H(α) emission that is viewed by a fast camera. The high density of the jet, several 10(16) cm(-3), results in substantial electron depletion, which attenuates the H(α) emission. The attenuated emission measurement, combined with a simplified electron-molecule collision model, allows us to determine the molecular density profile via a simple iterative calculation.

  8. Properties of large area ErBa2Cu3O(7-x) thin films deposited by ionized cluster beams

    NASA Technical Reports Server (NTRS)

    Levenson, L. L.; Stan, Mark A.; Bhasin, Kul B.

    1991-01-01

    ErBa2Cu3O(7-x) films have been produced by simultaneous deposition of Er, Ba, and Cu from three ionized cluster beam (ICB) sources at acceleration voltages of 0.3 to 0.5 kV. Combining ozone oxidation with ICB deposition at 650 C eliminated any need of post annealing processing. The substrates were rotated at 10 rotations per minute during the deposition which took place at a rate of about 3 to 4 nm. Films with areas up to 70 mm in diameter have been made by ICB deposition. These films, 100 nm thick, were deposited on SrTiO3 (100) substrates at 650 C in a mixture of six percent O3 in O2 at a total pressure of 4 x 10(exp -4) Torr. They had T(sub c) ranging from 84.3 K to 86.8 K over a 70 mm diameter and J(sub c) above 10(exp 6) A/sq cm at 77 K. X ray diffraction measurements of the three samples showed preferential c-axis orientation normal to the substrate surface. Scanning electron micrographs (SEM) of the three samples also show some texture dependence on sample position. For the three samples, there is a correlation between SEM texture, full width at half-maximum of rocking curves and J(sub c) versus temperature curves.

  9. Zn(1-x)MnxTe diluted magnetic semiconductor nanowires grown by molecular beam epitaxy.

    PubMed

    Zaleszczyk, Wojciech; Janik, Elzbieta; Presz, Adam; Dłuzewski, Piotr; Kret, Sławomir; Szuszkiewicz, Wojciech; Morhange, Jean-François; Dynowska, Elzbieta; Kirmse, Holm; Neumann, Wolfgang; Petroutchik, Aleksy; Baczewski, Lech T; Karczewski, Grzegorz; Wojtowicz, Tomasz

    2008-11-01

    It is shown that the growth of II-VI diluted magnetic semiconductor nanowires is possible by the catalytically enhanced molecular beam epitaxy (MBE). Zn(1-x)MnxTe NWs with manganese content up to x=0.60 were produced by this method. X-ray diffraction, Raman spectroscopy, and temperature dependent photoluminescence measurements confirm the incorporation of Mn(2+) ions in the cation substitutional sites of the ZnTe matrix of the NWs.

  10. Self-consistent expansion for the molecular beam epitaxy equation

    NASA Astrophysics Data System (ADS)

    Katzav, Eytan

    2002-03-01

    Motivated by a controversy over the correct results derived from the dynamic renormalization group (DRG) analysis of the nonlinear molecular beam epitaxy (MBE) equation, a self-consistent expansion for the nonlinear MBE theory is considered. The scaling exponents are obtained for spatially correlated noise of the general form D(r-->-r',t-t')=2D0\\|r-->- r'\\|2ρ-dδ(t-t'). I find a lower critical dimension dc(ρ)=4+2ρ, above which the linear MBE solution appears. Below the lower critical dimension a ρ-dependent strong-coupling solution is found. These results help to resolve the controversy over the correct exponents that describe nonlinear MBE, using a reliable method that proved itself in the past by giving reasonable results for the strong-coupling regime of the Kardar-Parisi-Zhang system (for d>1), where DRG failed to do so.

  11. Self-consistent expansion for the molecular beam epitaxy equation.

    PubMed

    Katzav, Eytan

    2002-03-01

    Motivated by a controversy over the correct results derived from the dynamic renormalization group (DRG) analysis of the nonlinear molecular beam epitaxy (MBE) equation, a self-consistent expansion for the nonlinear MBE theory is considered. The scaling exponents are obtained for spatially correlated noise of the general form D(r-r('),t-t('))=2D(0)[r-->-r(')](2rho-d)delta(t-t(')). I find a lower critical dimension d(c)(rho)=4+2rho, above which the linear MBE solution appears. Below the lower critical dimension a rho-dependent strong-coupling solution is found. These results help to resolve the controversy over the correct exponents that describe nonlinear MBE, using a reliable method that proved itself in the past by giving reasonable results for the strong-coupling regime of the Kardar-Parisi-Zhang system (for d>1), where DRG failed to do so.

  12. Graphitic carbon grown on fluorides by molecular beam epitaxy.

    PubMed

    Jerng, Sahng-Kyoon; Lee, Jae Hong; Kim, Yong Seung; Chun, Seung-Hyun

    2013-01-03

    We study the growth mechanism of carbon molecules supplied by molecular beam epitaxy on fluoride substrates (MgF2, CaF2, and BaF2). All the carbon layers form graphitic carbon with different crystallinities depending on the cation. Especially, the growth on MgF2 results in the formation of nanocrystalline graphite (NCG). Such dependence on the cation is a new observation and calls for further systematic studies with other series of substrates. At the same growth temperature, the NCG on MgF2 has larger clusters than those on oxides. This is contrary to the general expectation because the bond strength of the carbon-fluorine bond is larger than that of the carbon-oxygen bond. Our results show that the growth of graphitic carbon does not simply depend on the chemical bonding between the carbon and the anion in the substrate.

  13. Graphitic carbon grown on fluorides by molecular beam epitaxy

    PubMed Central

    2013-01-01

    We study the growth mechanism of carbon molecules supplied by molecular beam epitaxy on fluoride substrates (MgF2, CaF2, and BaF2). All the carbon layers form graphitic carbon with different crystallinities depending on the cation. Especially, the growth on MgF2 results in the formation of nanocrystalline graphite (NCG). Such dependence on the cation is a new observation and calls for further systematic studies with other series of substrates. At the same growth temperature, the NCG on MgF2 has larger clusters than those on oxides. This is contrary to the general expectation because the bond strength of the carbon-fluorine bond is larger than that of the carbon-oxygen bond. Our results show that the growth of graphitic carbon does not simply depend on the chemical bonding between the carbon and the anion in the substrate. PMID:23286607

  14. Silicon carbon(001) gas-source molecular beam epitaxy from methyl silane and silicon hydride: The effects of carbon incorporation and surface segregation on growth kinetics

    NASA Astrophysics Data System (ADS)

    Foo, Yong-Lim

    Si1-yCy alloys were grown on Si(001) by gas-source molecular-beam epitaxy (GS-MBE) from Si2H6/CH3 SiH3 mixtures as a function of C concentration y (0 to 2.6 at %) and deposition temperature Ts (500--600°C). High-resolution x-ray diffraction reciprocal lattice maps show that all layers are in tension and fully coherent with their substrates. Film growth rates R decrease with both y and Ts, and the rate of decrease in R as a function of y increases rapidly with Ts. In-situ isotopically-tagged D2 temperature-programmed desorption (TPD) measurements reveal that C segregates to the second-layer during steady-state Si1-y Cy(001) growth. This, in turn, results in charge-transfer from Si surface dangling bonds to second-layer C atoms, which have a higher electronegativity than Si. From the TPD results, we obtain the coverage θ Si*(y, Ts) of Si* surface sites with C backbonds as well as H2 desorption energies Ed from both Si and Si* surface sites. This leads to an increase in the H2 desorption rate, and hence should yield higher film deposition rates, with increasing y and/or Ts during Si1-yCy(001) growth. The effect, however, is more than offset by the decrease in Si2H 6 reactive sticking probabilities at Si* surface sites. Film growth rates R(Ts, JSi2H6,J CH3SiH3 ) calculated using a simple transition-state kinetic model, together with measured kinetic parameters, were found to be in good agreement with the experimental data. At higher growth temperature (725 and 750°C), superlattice structures consisting of alternating Si-rich and C-rich sublayers form spontaneously during the gas-source molecular beam epitaxial growth of Si1-y Cy layers from constant Si2H6 and CH 3SiH3 precursor fluxes. The formation of a self-organized superstructure is due to a complex interaction among competing surface reactions. During growth of the initial Si-rich sublayer, C strongly segregates to the second layer resulting in charge transfer from surface Si atom dangling bonds of to C

  15. Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2

    NASA Astrophysics Data System (ADS)

    Khosravi, Ava; Addou, Rafik; Smyth, Christopher M.; Yue, Ruoyu; Cormier, Christopher R.; Kim, Jiyoung; Hinkle, Christopher L.; Wallace, Robert M.

    2018-02-01

    Covalent p-type doping of WSe2 thin films grown by molecular beam epitaxy and WSe2 exfoliated from bulk crystals is achieved via remote nitrogen plasma exposure. X-ray photoelectron and Raman spectroscopies indicate covalently bonded nitrogen in the WSe2 lattice as well as tunable nitrogen concentration with N2 plasma exposure time. Furthermore, nitrogen incorporation induces compressive strain on the WSe2 lattice after N2 plasma exposure. Finally, atomic force microscopy and scanning tunneling microscopy reveal that N2 plasma treatment needs to be carefully tuned to avoid any unwanted strain or surface damage.

  16. Perspective. Extremely fine tuning of doping enabled by combinatorial molecular-beam epitaxy

    DOE PAGES

    Wu, J.; Bozovic, I.

    2015-04-06

    Chemical doping provides an effective method to control the electric properties of complex oxides. However, the state-of-art accuracy in controlling doping is limited to about 1%. This hampers elucidation of the precise doping dependences of physical properties and phenomena of interest, such as quantum phase transitions. Using the combinatorial molecular beam epitaxy, we improve the accuracy in tuning the doping level by two orders of magnitude. We illustrate this novel method by two examples: a systematic investigation of the doping dependence of interface superconductivity, and a study of the competing ground states in the vicinity of the insulator-to-superconductor transition.

  17. Electronic properties of single Ge/Si quantum dot grown by ion beam sputtering deposition.

    PubMed

    Wang, C; Ke, S Y; Yang, J; Hu, W D; Qiu, F; Wang, R F; Yang, Y

    2015-03-13

    The dependence of the electronic properties of a single Ge/Si quantum dot (QD) grown by the ion-beam sputtering deposition technique on growth temperature and QD diameter is investigated by conductive atomic force microscopy (CAFM). The Si-Ge intermixing effect is demonstrated to be important for the current distribution of single QDs. The current staircase induced by the Coulomb blockade effect is observed at higher growth temperatures (>700 °C) due to the formation of an additional barrier between dislocated QDs and Si substrate for the resonant tunneling of holes. According to the proposed single-hole-tunneling model, the fact that the intermixing effect is observed to increase as the incoherent QD size decreases may explain the increase in the starting voltage of the current staircase and the decrease in the current step width.

  18. Investigation of chemical vapour deposition diamond detectors by X-ray micro-beam induced current and X-ray micro-beam induced luminescence techniques

    NASA Astrophysics Data System (ADS)

    Olivero, P.; Manfredotti, C.; Vittone, E.; Fizzotti, F.; Paolini, C.; Lo Giudice, A.; Barrett, R.; Tucoulou, R.

    2004-10-01

    Tracking detectors have become an important ingredient in high-energy physics experiments. In order to survive the harsh detection environment of the large hadron collider (LHC), trackers need to have special properties. They must be radiation hard, provide fast collection of charge, be as thin as possible and remove heat from readout electronics. The unique properties of diamond allow it to fulfill these requirements. In this work we present an investigation of the charge transport and luminescence properties of "detector grade" artificial chemical vapour deposition (CVD) diamond devices developed within the CERN RD42 collaboration, performed by means of X-ray micro-beam induced current collection (XBICC) and X-ray micro-beam induced luminescence (XBIL) techniques. XBICC technique allows quantitative estimates of the transport parameters of the material to be evaluated and mapped with micrometric spatial resolution. In particular, the high resolution and sensitivity of the technique has allowed a quantitative study of the inhomogeneity of the charge transport parameter defined as the product of mobility and lifetime for both electron and holes. XBIL represents a technique complementary to ion beam induced luminescence (IBIL), which has already been used by our group, since X-ray energy loss profile in the material is different from that of MeV ions. X-ray induced luminescence maps have been performed simultaneously with induced photocurrent maps, to correlate charge transport and induced luminescence properties of diamond. Simultaneous XBICC and XBIL maps exhibit features of partial complementarity that have been interpreted on the basis of considerations on radiative and non-radiative recombination processes which compete with charge transport efficiency.

  19. Direct molecular dynamics simulation of Ge deposition on amorphous SiO 2 at experimentally relevant conditions

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chuang, Claire Y.; Zepeda-Ruiz, Luis A.; Han, Sang M.

    2015-06-01

    Molecular dynamics simulations were used to study Ge island nucleation and growth on amorphous SiO 2 substrates. This process is relevant in selective epitaxial growth of Ge on Si, for which SiO 2 is often used as a template mask. The islanding process was studied over a wide range of temperatures and fluxes, using a recently proposed empirical potential model for the Si–SiO 2–Ge system. The simulations provide an excellent quantitative picture of the Ge islanding and compare well with detailed experimental measurements. These quantitative comparisons were enabled by an analytical rate model as a bridge between simulations and experimentsmore » despite the fact that deposition fluxes accessible in simulations and experiments are necessarily different by many orders of magnitude. In particular, the simulations led to accurate predictions of the critical island size and the scaling of island density as a function of temperature. Lastly, the overall approach used here should be useful not just for future studies in this particular system, but also for molecular simulations of deposition in other materials.« less

  20. Performance of a MICROMEGAS-based TPC in a high-energy neutron beam

    DOE PAGES

    Snyder, L.; Manning, B.; Bowden, N. S.; ...

    2017-11-01

    The MICROMEGAS (MICRO-MEsh GAseous Structure) charge amplification structure has found wide use in many detection applications, especially as a gain stage for the charge readout of Time Projection Chambers (TPCs). We report on the behavior of a MICROMEGAS TPC when operated in a high-energy (up to 800 MeV) neutron beam. It is found that neutron-induced reactions can cause discharges in some drift gas mixtures that are stable in the absence of the neutron beam. The discharges result from recoil ions close to the MICROMEGAS that deposit high specific ionization density and have a limited diffusion time. And for a binarymore » drift gas, increasing the percentage of the molecular component (quench gas) relative to the noble component and operating at lower pressures generally improves stability.« less

  1. Performance of a MICROMEGAS-based TPC in a high-energy neutron beam

    NASA Astrophysics Data System (ADS)

    Snyder, L.; Manning, B.; Bowden, N. S.; Bundgaard, J.; Casperson, R. J.; Cebra, D. A.; Classen, T.; Duke, D. L.; Gearhart, J.; Greife, U.; Hagmann, C.; Heffner, M.; Hensle, D.; Higgins, D.; Isenhower, D.; King, J.; Klay, J. L.; Geppert-Kleinrath, V.; Loveland, W.; Magee, J. A.; Mendenhall, M. P.; Sangiorgio, S.; Seilhan, B.; Schmitt, K. T.; Tovesson, F.; Towell, R. S.; Walsh, N.; Watson, S.; Yao, L.; Younes, W.

    2018-02-01

    The MICROMEGAS (MICRO-MEsh GAseous Structure) charge amplification structure has found wide use in many detection applications, especially as a gain stage for the charge readout of Time Projection Chambers (TPCs). Here we report on the behavior of a MICROMEGAS TPC when operated in a high-energy (up to 800 MeV) neutron beam. It is found that neutron-induced reactions can cause discharges in some drift gas mixtures that are stable in the absence of the neutron beam. The discharges result from recoil ions close to the MICROMEGAS that deposit high specific ionization density and have a limited diffusion time. For a binary drift gas, increasing the percentage of the molecular component (quench gas) relative to the noble component and operating at lower pressures generally improves stability.

  2. Chemistry of Non-Equilibrium Film Deposition.

    DTIC Science & Technology

    1985-12-01

    titanium isopropoxide mixed with water solutions of lanthanum and lead nitrate. The gels were dehydrated, then fired to 600C to remove all organics...OW- ’so IRO $Va. ame Thin films; titanium dioxide; -PuZT,- ion beam deposition; annealing,’ trnmiso electron microscopy. 4 - . - S \\AISST 0A ZT *Can...Deposition....... . ... *.... .. ... .. ..... .. . .... 2 C. Nonequilibrium Physical Deposition.................... 3 1. Titanium Oxide Films

  3. Texture analysis of CoGe2 alloy films grown heteroepitaxially on GaAs(100) using partially ionized beam deposition

    NASA Astrophysics Data System (ADS)

    Mello, K. E.; Murarka, S. P.; Lu, T.-M.; Lee, S. L.

    1997-06-01

    Reflection x-ray pole figure analysis techniques were used to study the heteroepitaxial relationships of the cobalt germanide CoGe2 to GaAs(100). The alloy films were grown using the partially ionized beam deposition technique, in which low energy Ge+ ions are employed to alter the heteroepitaxial orientation of the CoGe2 deposits. The CoGe2[001](100)∥GaAs[100](001) orientation, which has the smallest lattice mismatch, was found to occur for depositions performed at a substrate temperature around 280 °C and with ˜1200 eV Ge+ ions. Lowering the substrate temperature or reducing the Ge+ ion energy leads to CoGe2(100) orientation domination with CoGe2[100](010)∥GaAs[100](001) and CoGe2[100](001)∥GaAs[100](001). Substrate temperature alone was seen to produce only the CoGe2(100) orientation. For CoGe2(001) films, additional energy was required from Ge+ ions in the evaporant stream.

  4. Growth of boron-doped few-layer graphene by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Soares, G. V.; Nakhaie, S.; Heilmann, M.; Riechert, H.; Lopes, J. M. J.

    2018-04-01

    We investigated the growth of boron-doped few-layer graphene on α-Al2O3 (0001) substrates by molecular beam epitaxy using two different growth approaches: one where boron was provided during the entire graphene synthesis and the second where boron was provided only during the second half of the graphene growth run. Electrical measurements show a higher p-type carrier concentration for samples fabricated utilizing the second approach, with a remarkable modulation in the carrier concentration of almost two orders of magnitude in comparison to the pristine graphene film. The results concerning the influence of the boron flux at different growth stages of graphene on the electrical and physicochemical properties of the films are presented.

  5. Ion-beam-assisted deposition of Au nanocluster/Nb 2O 5 thin films with nonlinear optical properties

    NASA Astrophysics Data System (ADS)

    Cotell, C. M.; Schiestel, S.; Carosella, C. A.; Flom, S.; Hubler, G. K.; Knies, D. L.

    1997-05-01

    Gold nanocluster thin films (˜ 200 nm thickness) consisting of metal clusters ˜ 5 nm in size embedded in a matrix of Nb 2O 5 were deposited by ion beam-assisted deposition (IBAD) by coevaporation of Au and Nb with O 2+ ion bombardment. The microstructure and optical characteristics of these films were examined as-deposited and after annealing at 600°C. Annealing crystallized the amorphous oxide matrix and ripened the nanoclusters. A strong linear absorption at the wavelength of the surface plasmon resonance for Au developed as a result of annealing. The linear optical behavior was modeled using Mie scattering theory. Good agreement was found between the nanocluster sizes predicted by the theory and the particle sizes observed experimentally using transmission electron microscopy (TEM). The nonlinear optical (NLO) properties of the nanocluster films were probed experimentally using degenerate four wave mixing and nonlinear transmission. The wavelength was near the peak of the surface plasmon resonance as measured by VIS/UV spectroscopy. Values of | χxxxx(3)| were 7.3 × 10 -8 and 3.0 × 10 -10 esu for annealed and unannealed samples, respe The dominant mechanism for the nonlinear response was change in dielectric constant due to the generation of a distribution of hot, photoexcited electrons.

  6. Formation of ferromagnetic molecular thin films from blends by annealing

    PubMed Central

    Robaschik, Peter; Ma, Ye; Din, Salahud

    2017-01-01

    We report on a new approach for the fabrication of ferromagnetic molecular thin films. Co-evaporated films of manganese phthalocyanine (MnPc) and tetracyanoquinodimethane (TCNQ) have been produced by organic molecular beam deposition (OMBD) on rigid (glass, silicon) and flexible (Kapton) substrates kept at room temperature. The MnPc:TCNQ films are found to be entirely amorphous due to the size mismatch of the molecules. However, by annealing while covering the samples highly crystalline MnPc films in the β-polymorph can be obtained at 60 °C lower than when starting with pure MnPc films. The resulting films exhibit substantial coercivity (13 mT) at 2 K and a Curie temperature of 11.5 K. PMID:28900600

  7. Optical properties of nanocrystalline Y2O3 thin films grown on quartz substrates by electron beam deposition

    NASA Astrophysics Data System (ADS)

    Wiktorczyk, Tadeusz; Biegański, Piotr; Serafińczuk, Jarosław

    2016-09-01

    Yttrium oxide thin films of a thickness 221-341 nm were formed onto quartz substrates by reactive physical vapor deposition in an oxygen atmosphere. An electron beam gun was applied as a deposition source. The effect of substrate temperature during film deposition (in the range of 323-673 K) on film structure, surface morphology and optical properties was investigated. The surface morphology studies (with atomic force microscopy and diffuse spectra reflectivity) show that the film surface was relatively smooth with RMS surface roughness in the range of 1.7-3.8 nm. XRD analysis has revealed that all diffraction lines belong to a cubic Y2O3 structure. The films consisted of small nanocrystals. Their average grain size increases from 1.6 nm to 22 nm, with substrate temperature rising from 323 K to 673 K. Optical examinations of transmittance and reflectance were performed in the spectral range of 0.2-2.5 μm. Optical constants and their dispersion curves were determined. Values of the refractive index of the films were in the range of n = 1.79-1.90 (at 0.55 μm) for substrate temperature during film deposition of 323-673 K. The changes in the refractive index upon substrate temperature correspond very well with the increase in the nanocrystals grain diameter and with film porosity.

  8. Directly-deposited blocking filters for high-performance silicon x-ray detectors

    NASA Astrophysics Data System (ADS)

    Bautz, M.; Kissel, S.; Masterson, R.; Ryu, K.; Suntharalingam, V.

    2016-07-01

    Silicon X-ray detectors often require blocking filters to mitigate noise and out-of-band signal from UV and visible backgrounds. Such filters must be thin to minimize X-ray absorption, so direct deposition of filter material on the detector entrance surface is an attractive approach to fabrication of robust filters. On the other hand, the soft (E < 1 keV) X-ray spectral resolution of the detector is sensitive to the charge collection efficiency in the immediate vicinity of its entrance surface, so it is important that any filter layer is deposited without disturbing the electric field distribution there. We have successfully deposited aluminum blocking filters, ranging in thickness from 70 to 220nm, on back-illuminated CCD X-ray detectors passivated by means of molecular beam epitaxy. Here we report measurements showing that directly deposited filters have little or no effect on soft X-ray spectral resolution. We also find that in applications requiring very large optical density (> OD 6) care must be taken to prevent light from entering the sides and mounting surfaces of the detector. Our methods have been used to deposit filters on the detectors of the REXIS instrument scheduled to fly on OSIRIS-ReX later this year.

  9. Internal transport barrier triggered by non-linear lower hybrid wave deposition under condition of beam-driven toroidal rotation

    NASA Astrophysics Data System (ADS)

    Gao, Q. D.; Budny, R. V.

    2015-03-01

    By using gyro-Landau fluid transport model (GLF23), time-dependent integrated modeling is carried out using TRANSP to explore the dynamic process of internal transport barrier (ITB) formation in the neutral beam heating discharges. When the current profile is controlled by LHCD (lower hybrid current drive), with appropriate neutral beam injection, the nonlinear interplay between the transport determined gradients in the plasma temperature (Ti,e) and toroidal velocity (Vϕ) and the E×B flow shear (including q-profile) produces transport bifurcations, generating spontaneously a stepwise growing ITB. In the discharge, the constraints imposed by the wave propagation condition causes interplay of the LH driven current distribution with the plasma configuration modification, which constitutes non-linearity in the LH wave deposition. The non-linear effects cause bifurcation in LHCD, generating two distinct quasi-stationary reversed magnetic shear configurations. The change of current profile during the transition period between the two quasi-stationary states results in increase of the E×B shearing flow arising from toroidal rotation. The turbulence transport suppression by sheared E×B flow during the ITB development is analysed, and the temporal evolution of some parameters characterized the plasma confinement is examined. Ample evidence shows that onset of the ITB development is correlated with the enhancement of E×B shearing rate caused by the bifurcation in LHCD. It is suggested that the ITB triggering is associated with the non-linear effects of the LH power deposition.

  10. Internal transport barrier triggered by non-linear lower hybrid wave deposition under condition of beam-driven toroidal rotation

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gao, Q. D., E-mail: qgao@swip.ac.cn; Budny, R. V.

    2015-03-15

    By using gyro-Landau fluid transport model (GLF23), time-dependent integrated modeling is carried out using TRANSP to explore the dynamic process of internal transport barrier (ITB) formation in the neutral beam heating discharges. When the current profile is controlled by LHCD (lower hybrid current drive), with appropriate neutral beam injection, the nonlinear interplay between the transport determined gradients in the plasma temperature (T{sub i,e}) and toroidal velocity (V{sub ϕ}) and the E×B flow shear (including q-profile) produces transport bifurcations, generating spontaneously a stepwise growing ITB. In the discharge, the constraints imposed by the wave propagation condition causes interplay of the LHmore » driven current distribution with the plasma configuration modification, which constitutes non-linearity in the LH wave deposition. The non-linear effects cause bifurcation in LHCD, generating two distinct quasi-stationary reversed magnetic shear configurations. The change of current profile during the transition period between the two quasi-stationary states results in increase of the E×B shearing flow arising from toroidal rotation. The turbulence transport suppression by sheared E×B flow during the ITB development is analysed, and the temporal evolution of some parameters characterized the plasma confinement is examined. Ample evidence shows that onset of the ITB development is correlated with the enhancement of E×B shearing rate caused by the bifurcation in LHCD. It is suggested that the ITB triggering is associated with the non-linear effects of the LH power deposition.« less

  11. Free vibration analysis of microtubules based on the molecular mechanics and continuum beam theory.

    PubMed

    Zhang, Jin; Wang, Chengyuan

    2016-10-01

    A molecular structural mechanics (MSM) method has been implemented to investigate the free vibration of microtubules (MTs). The emphasis is placed on the effects of the configuration and the imperfect boundaries of MTs. It is shown that the influence of protofilament number on the fundamental frequency is strong, while the effect of helix-start number is almost negligible. The fundamental frequency is also found to decrease as the number of the blocked filaments at boundaries decreases. Subsequently, the Euler-Bernoulli beam theory is employed to reveal the physics behind the simulation results. Fitting the Euler-Bernoulli beam into the MSM data leads to an explicit formula for the fundamental frequency of MTs with various configurations and identifies a possible correlation between the imperfect boundary conditions and the length-dependent bending stiffness of MTs reported in experiments.

  12. Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

    NASA Technical Reports Server (NTRS)

    Benz, R. G., II; Huang, P. C.; Stock, S. R.; Summers, C. J.

    1988-01-01

    The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

  13. Effect of Zn and Te beam intensity upon the film quality of ZnTe layers on severely lattice mismatched sapphire substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Nakasu, Taizo; Sun, W.; Kobayashi, M.; Asahi, T.

    2017-06-01

    Zinc telluride layers were grown on highly-lattice-mismatched sapphire substrates by molecular beam epitaxy, and their crystallographic properties were studied by means of X-ray diffraction pole figures. The crystal quality of the ZnTe thin film was further studied by scanning electron microscopy, X-ray rocking curves and low-temperature photoluminescence measurements. These methods show that high-crystallinity (111)-oriented single domain ZnTe layers with the flat surface and good optical properties are realized when the beam intensity ratio of Zn and Te beams is adjusted. The migration of Zn and Te was inhibited by excess surface material and cracks were appeared. In particular, excess Te inhibited the formation of a high-crystallinity ZnTe film. The optical properties of the ZnTe layer revealed that the exciton-related features were dominant, and therefore the film quality was reasonably high even though the lattice constants and the crystal structures were severely mismatched.

  14. Supersonic molecular beam injection effects on tokamak plasma applied non-axisymmetric magnetic perturbation

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Han, Hyunsun, E-mail: hyunsun@nfri.re.kr; In, Y.; Jeon, Y. M.

    The change of tokamak plasma behavior by supersonic molecular beam injection (SMBI) was investigated by applying a three-dimensional magnetic perturbation that could suppress edge localized modes (ELMs). From the time trace of decreasing electron temperature and with increasing plasma density keeping the total confined energy constant, the SMBI seems to act as a cold pulse on the plasma. However, the ELM behaviors were changed drastically (i.e., the symptom of ELM suppression has disappeared). The plasma collisionality in the edge-pedestal region could play a role in the change of the ELM behaviors.

  15. Short-period (AlAs)(GaAs) superlattice lasers grown by molecular beam epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Blood, P.; Fletcher, E.D.; Foxon, C.T.

    1988-07-25

    We have used short-period all-binary (AlAs)(GaAs) superlattices with layers as thin as three monolayers to synthesize the barrier and cladding regions of GaAs quantum well lasers grown by molecular beam epitaxy. By studying the threshold current of single- and double-well devices as a function of cavity length and temperature, we conclude that the optical scattering losses are very low, that the gain-current characteristics are similar to alloy barrier devices, and that there is evidence for current leakage by recombination in the barriers.

  16. Ion beam technology applications study. [ion impact, implantation, and surface finishing

    NASA Technical Reports Server (NTRS)

    Sellen, J. M., Jr.; Zafran, S.; Komatsu, G. K.

    1978-01-01

    Specific perceptions and possible ion beam technology applications were obtained as a result of a literature search and contact interviews with various institutions and individuals which took place over a 5-month period. The use of broad beam electron bombardment ion sources is assessed for materials deposition, removal, and alteration. Special techniques examined include: (1) cleaning, cutting, and texturing for surface treatment; (2) crosslinking of polymers, stress relief in deposited layers, and the creation of defect states in crystalline material by ion impact; and (3) ion implantation during epitaxial growth and the deposition of neutral materials sputtered by the ion beam. The aspects, advantages, and disadvantages of ion beam technology and the competitive role of alternative technologies are discussed.

  17. FAST TRACK COMMUNICATION: Poly(methyl methacrylate)-palladium clusters nanocomposite formation by supersonic cluster beam deposition: a method for microstructured metallization of polymer surfaces

    NASA Astrophysics Data System (ADS)

    Ravagnan, Luca; Divitini, Giorgio; Rebasti, Sara; Marelli, Mattia; Piseri, Paolo; Milani, Paolo

    2009-04-01

    Nanocomposite films were fabricated by supersonic cluster beam deposition (SCBD) of palladium clusters on poly(methyl methacrylate) (PMMA) surfaces. The evolution of the electrical conductance with cluster coverage and microscopy analysis show that Pd clusters are implanted in the polymer and form a continuous layer extending for several tens of nanometres beneath the polymer surface. This allows the deposition, using stencil masks, of cluster-assembled Pd microstructures on PMMA showing a remarkably high adhesion compared with metallic films obtained by thermal evaporation. These results suggest that SCBD is a promising tool for the fabrication of metallic microstructures on flexible polymeric substrates.

  18. Directed Vapor Deposition: Low Vacuum Materials Processing Technology

    DTIC Science & Technology

    2000-01-01

    constituent A Crucible with constituent B Electron beam AB Substrate Deposit Flux of A Flux of B Composition "Skull" melt Electron beam Coolant Copper ... crucible Evaporation target Evaporant material Vapor flux Fibrous Coating Surface a) b) sharp (0.5 mm) beam focussing. When used with multisource

  19. Ion beam sputtering of in situ superconducting Y-Ba-Cu-O films

    NASA Astrophysics Data System (ADS)

    Klein, J. D.; Yen, A.; Clauson, S. L.

    1990-05-01

    Oriented superconducting YBa2Cu3O7 thin films were deposited on yttria stabilized zirconia and SrTiO3 substrates by ion-beam sputtering of a nonstoichiometric oxide target. The films exhibited zero-resistance critical temperatures as high as 83.5 K without post-deposition anneals. Both the deposition rate and the c-lattice parameter data displayed two distinct regimes of dependence on the beam power of the ion source. Low-power sputtering yielded films with large c-dimensions and low Tc. Higher-power sputtering produced a continuous decrease in the c-lattice parameter and increase in critical temperature. Films having the smaller c-lattice parameters were Cu rich. The Cu content of films deposited at beam voltages of 800 V and above increased with increasing beam power.

  20. Quantitative scanning thermal microscopy of ErAs/GaAs superlattice structures grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Park, K. W.; Nair, H. P.; Crook, A. M.; Bank, S. R.; Yu, E. T.

    2013-02-01

    A proximal probe-based quantitative measurement of thermal conductivity with ˜100-150 nm lateral and vertical spatial resolution has been implemented. Measurements on an ErAs/GaAs superlattice structure grown by molecular beam epitaxy with 3% volumetric ErAs content yielded thermal conductivity at room temperature of 9 ± 2 W/m K, approximately five times lower than that for GaAs. Numerical modeling of phonon scattering by ErAs nanoparticles yielded thermal conductivities in reasonable agreement with those measured experimentally and provides insight into the potential influence of nanoparticle shape on phonon scattering. Measurements of wedge-shaped samples created by focused ion beam milling provide direct confirmation of depth resolution achieved.

  1. MAPLE deposition of PLGA:PEG films for controlled drug delivery: Influence of PEG molecular weight

    NASA Astrophysics Data System (ADS)

    Paun, Irina Alexandra; Moldovan, Antoniu; Luculescu, Catalin Romeo; Staicu, Angela; Dinescu, Maria

    2012-09-01

    Implantable devices consisting of indomethacin (INC) cores coated with poly(lactide-co-glycolide):polyethylene glycol films (i.e. PLGA:PEG films) deposited by Matrix Assisted Pulsed Laser Evaporation (MAPLE) were produced. To predict their behavior after implantation inside the body, the implants were studied in vitro, in media similar with those encountered inside the body (phosphate buffered saline (PBS) pH 7.4 and blood). The influence of the molecular weight of PEG (i.e. low (1450 Da) versus high (10 kDa) molecular weights) on the characteristics of the implants was investigated, in terms of morphology, blood compatibility and kinetics of the drug release. The use of PEG of high molecular weight resulted in larger pores on the implants surfaces, enhanced blood compatibility of the implants and higher drug delivery rates. For both molecular weights PEGs, sustained release of INC was maintained over a three weeks interval. Theoretical fitting of the drug release data with Higuchi's model indicated that the INC was released mainly by diffusion, most probably through the pores formed in PLGA:PEG films during PBS immersion.

  2. Cluster Beam Studies.

    DTIC Science & Technology

    1988-04-01

    Continue on reverse if necessary and identify by block number) Cluster beams offer a means of depositing high-quality thin films at low...either directly inclustered vapors of nonvolatile materials or Indirectly by bombarding the film duringdeposition with clusters of inert gases. When a...electron volt energy per atom. The suprathermal energy of thej depositing atoms is thought to produce unique thin films (either in quality, or in the ability

  3. Atomic and Molecular Spectroscopic Studies of the DIII-D Neutral Beam Ion Source and Neutralizer

    NASA Astrophysics Data System (ADS)

    Crowley, B.; Rauch, J.; Scoville, J. T.; Sharma, S. K.; Choksi, B.

    2015-11-01

    The neutral beam system is interesting in that it comprises two distinct low temperature plasmas. Firstly, the ion source is typically a filament or RF driven plasma from which ions are extracted by a high voltage accelerator grid system. Secondly the neutralizer is essentially a low temperature plasma system with the beam serving as the primary ionization source and the neutralizer walls serving as conducting boundaries. Atomic spectroscopy of Doppler shifted D-alpha light emanating from the fast atoms is studied to determine the composition of the source and the divergence of the beam. Molecular spectroscopy involves measuring fine structure in electron-vibrational rotational bands. The technique has applications in low temperature plasmas and here it is used to determine gas temperature in the neutralizer. We describe the experimental set-up and the physics model used to relate the spectroscopic data to the plasma parameters and we present results of recent experiments exploring how to increase neutralization efficiency. Supported by the US DOE under DE-FC02-04ER54698.

  4. Effects of film thickness on the linear and nonlinear refractive index of p-type SnO films deposited by e-beam evaporation process

    NASA Astrophysics Data System (ADS)

    El-Gendy, Y. A.

    2017-12-01

    Tin monoxide (SnO) films of different thickness have been deposited onto glass substrates at vacuum pressure of ∼ 8 × 10-6 mbar using an e-beam evaporation system. A hot probe test revealed that the deposited films showed p-type conduction. The structure characterization and phase purity of the deposited films was confirmed using X-ray diffraction (XRD) and Raman spectroscopy. The optical transmission and reflection spectra of the deposited films recorded in the wavelength range 190-2500 nm were used to calculate the optical constants employing the Murmann's exact equations. The refractive index dispersion was adequately described by the well-known effective-single-oscillator model proposed by Wemple-DiDomenico, whereby the dispersion parameters were calculated. The nonlinear refractive index and nonlinear optical susceptibility of the deposited films were successfully evaluated using the Miller empirical relations. The lattice dielectric constant and the carrier concentration to the effective mass ratio were also calculated as a function of film thickness using the Spitzer and Fan model. The variation of the optical band gap of the deposited films as a function of film thickness was also presented.

  5. Three-dimensional Čerenkov tomography of energy deposition from ionizing radiation beams.

    PubMed

    Glaser, Adam K; Voigt, William H A; Davis, Scott C; Zhang, Rongxiao; Gladstone, David J; Pogue, Brian W

    2013-03-01

    Since its discovery during the 1930s the Čerenkov effect (light emission from charged particles traveling faster than the local speed of light in a dielectric medium) has been paramount in the development of high-energy physics research. The ability of the emitted light to describe a charged particle's trajectory, energy, velocity, and mass has allowed scientists to study subatomic particles, detect neutrinos, and explore the properties of interstellar matter. However, to our knowledge, all applications of the process to date have focused on the identification of particles themselves, rather than their effect upon the surroundings through which they travel. Here we explore a novel application of the Čerenkov effect for the recovery of the spatial distribution of ionizing radiation energy deposition in a medium and apply it to the issue of dose determination in medical physics. By capturing multiple projection images of the Čerenkov light induced by a medical linear accelerator x-ray photon beam, we demonstrate the successful three-dimensional tomographic reconstruction of the imparted dose distribution.

  6. The isotype ZnO/SiC heterojunction prepared by molecular beam epitaxy – A chemical inert interface with significant band discontinuities

    PubMed Central

    Zhang, Yufeng; Lin, Nanying; Li, Yaping; Wang, Xiaodan; Wang, Huiqiong; Kang, Junyong; Wilks, Regan; Bär, Marcus; Mu, Rui

    2016-01-01

    ZnO/SiC heterojunctions show great potential for various optoelectronic applications (e.g., ultraviolet light emitting diodes, photodetectors, and solar cells). However, the lack of a detailed understanding of the ZnO/SiC interface prevents an efficient and rapid optimization of these devices. Here, intrinsic (but inherently n-type) ZnO were deposited via molecular beam epitaxy on n–type 6H-SiC single crystalline substrates. The chemical and electronic structure of the ZnO/SiC interfaces were characterized by ultraviolet/x-ray photoelectron spectroscopy and x-ray excited Auger electron spectroscopy. In contrast to the ZnO/SiC interface prepared by radio frequency magnetron sputtering, no willemite-like zinc silicate interface species is present at the MBE-ZnO/SiC interface. Furthermore, the valence band offset at the abrupt ZnO/SiC interface is experimentally determined to be (1.2 ± 0.3) eV, suggesting a conduction band offset of approximately 0.8 eV, thus explaining the reported excellent rectifying characteristics of isotype ZnO/SiC heterojunctions. These insights lead to a better comprehension of the ZnO/SiC interface and show that the choice of deposition route might offer a powerful means to tailor the chemical and electronic structures of the ZnO/SiC interface, which can eventually be utilized to optimize related devices. PMID:26976240

  7. Dual beam optical system for pulsed laser ablation film deposition

    DOEpatents

    Mashburn, Douglas N.

    1996-01-01

    A laser ablation apparatus having a laser source outputting a laser ablation beam includes an ablation chamber having a sidewall, a beam divider for dividing the laser ablation beam into two substantially equal halves, and a pair of mirrors for converging the two halves on a surface of the target from complementary angles relative to the target surface normal, thereby generating a plume of ablated material emanating from the target.

  8. Effect of surface roughness and size of beam on squeeze-film damping—Molecular dynamics simulation study

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kim, Hojin; Strachan, Alejandro

    2015-11-28

    We use large-scale molecular dynamics (MD) to characterize fluid damping between a substrate and an approaching beam. We focus on the near contact regime where squeeze film (where fluid gap is comparable to the mean free path of the gas molecules) and many-body effects in the fluid become dominant. The MD simulations provide explicit description of many-body and non-equilibrium processes in the fluid as well as the surface topography. We study how surface roughness and beam width increases the damping coefficient due to their effect on fluid mobility. We find that the explicit simulations are in good agreement with priormore » direct simulation Monte Carlo results except at near-contact conditions where many-body effects in the compressed fluid lead the increased damping and weaker dependence on beam width. We also show that velocity distributions near the beam edges and for short gaps deviate from the Boltzmann distribution indicating a degree of local non-equilibrium. These results will be useful to parameterize compact models used for microsystem device-level simulations and provide insight into mesoscale simulations of near-contact damping.« less

  9. In vacancies in InN grown by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Reurings, Floris; Tuomisto, Filip; Gallinat, Chad S.; Koblmüller, Gregor; Speck, James S.

    2010-12-01

    The authors have applied positron annihilation spectroscopy to study the effect of different growth conditions on vacancy formation in In- and N-polar InN grown by plasma-assisted molecular beam epitaxy. The results suggest that the structural quality of the material and limited diffusion of surface adatoms during growth dictate the In vacancy formation in low electron-density undoped epitaxial InN, while growth conditions and thermodynamics have a less important role, contrary to what is observed in, e.g., GaN. Furthermore, the results imply that in high quality InN, the electron mobility is likely limited not by ionized point defect scattering, but rather by threading dislocations.

  10. MEASUREMENT OF HIGH-MOLECULAR-WEIGHT POLYCYCLIC AROMATIC HYDROCARBONS IN SOILS BY PARTICLE BEAM HIGH-PERFORMANCE LIQUID CHROMATOGRAPHY-MASS SPECTROMETRY

    EPA Science Inventory

    Polycyclic aromatic hydrocarbons (PAHs) comprise a class of potentially hazardous compounds of concern to the U.S.EPA. The application of particle-beam (PB) liquid chromatography-mass spectrometry (LC-MS) to the measurement of high-molecular-weight PAHs was investigated. Instrume...

  11. The rational design of a Au(I) precursor for focused electron beam induced deposition

    PubMed Central

    Marashdeh, Ali; Tiesma, Thiadrik; van Velzen, Niels J C; Harder, Sjoerd; Havenith, Remco W A; De Hosson, Jeff T M

    2017-01-01

    Au(I) complexes are studied as precursors for focused electron beam induced processing (FEBIP). FEBIP is an advanced direct-write technique for nanometer-scale chemical synthesis. The stability and volatility of the complexes are characterized to design an improved precursor for pure Au deposition. Aurophilic interactions are found to play a key role. The short lifetime of ClAuCO in vacuum is explained by strong, destabilizing Au–Au interactions in the solid phase. While aurophilic interactions do not affect the stability of ClAuPMe3, they leave the complex non-volatile. Comparison of crystal structures of ClAuPMe3 and MeAuPMe3 shows that Au–Au interactions are much weaker or partially even absent for the latter structure. This explains its high volatility. However, MeAuPMe3 dissociates unfavorably during FEBIP, making it an unsuitable precursor. The study shows that Me groups reduce aurophilic interactions, compared to Cl groups, which we attribute to electronic rather than steric effects. Therefore we propose MeAuCO as a potential FEBIP precursor. It is expected to have weak Au–Au interactions, making it volatile. It is stable enough to act as a volatile source for Au deposition, being stabilized by 6.5 kcal/mol. Finally, MeAuCO is likely to dissociate in a single step to pure Au. PMID:29354346

  12. The rational design of a Au(I) precursor for focused electron beam induced deposition.

    PubMed

    Marashdeh, Ali; Tiesma, Thiadrik; van Velzen, Niels J C; Harder, Sjoerd; Havenith, Remco W A; De Hosson, Jeff T M; van Dorp, Willem F

    2017-01-01

    Au(I) complexes are studied as precursors for focused electron beam induced processing (FEBIP). FEBIP is an advanced direct-write technique for nanometer-scale chemical synthesis. The stability and volatility of the complexes are characterized to design an improved precursor for pure Au deposition. Aurophilic interactions are found to play a key role. The short lifetime of ClAuCO in vacuum is explained by strong, destabilizing Au-Au interactions in the solid phase. While aurophilic interactions do not affect the stability of ClAuPMe 3 , they leave the complex non-volatile. Comparison of crystal structures of ClAuPMe 3 and MeAuPMe 3 shows that Au-Au interactions are much weaker or partially even absent for the latter structure. This explains its high volatility. However, MeAuPMe 3 dissociates unfavorably during FEBIP, making it an unsuitable precursor. The study shows that Me groups reduce aurophilic interactions, compared to Cl groups, which we attribute to electronic rather than steric effects. Therefore we propose MeAuCO as a potential FEBIP precursor. It is expected to have weak Au-Au interactions, making it volatile. It is stable enough to act as a volatile source for Au deposition, being stabilized by 6.5 kcal/mol. Finally, MeAuCO is likely to dissociate in a single step to pure Au.

  13. Studies on Beam Formation in an Atomic Beam Source

    NASA Astrophysics Data System (ADS)

    Nass, A.; Stancari, M.; Steffens, E.

    2009-08-01

    Atomic beam sources (ABS) are widely used workhorses producing polarized atomic beams for polarized gas targets and polarized ion sources. Although they have been used for decades the understanding of the beam formation processes is crude. Models were used more or less successfully to describe the measured intensity and beam parameters. ABS's are also foreseen for future experiments, such as PAX [1]. An increase of intensity at a high polarization would be beneficial. A direct simulation Monte-Carlo method (DSMC) [2] was used to describe the beam formation of a hydrogen or deuterium beam in an ABS. For the first time a simulation of a supersonic gas expansion on a molecular level for this application was performed. Beam profile and Time-of-Flight measurements confirmed the simulation results. Furthermore a new method of beam formation was tested, the Carrier Jet method [3], based on an expanded beam surrounded by an over-expanded carrier jet.

  14. Structure-property relation and relevance of beam theories for microtubules: a coupled molecular and continuum mechanics study.

    PubMed

    Li, Si; Wang, Chengyuan; Nithiarasu, Perumal

    2018-04-01

    Quasi-one-dimensional microtubules (MTs) in cells enjoy high axial rigidity but large transverse flexibility due to the inter-protofilament (PF) sliding. This study aims to explore the structure-property relation for MTs and examine the relevance of the beam theories to their unique features. A molecular structural mechanics (MSM) model was used to identify the origin of the inter-PF sliding and its role in bending and vibration of MTs. The beam models were then fitted to the MSM to reveal how they cope with the distinct mechanical responses induced by the inter-PF sliding. Clear evidence showed that the inter-PF sliding is due to the soft inter-PF bonds and leads to the length-dependent bending stiffness. The Euler beam theory is found to adequately describe MT deformation when the inter-PF sliding is largely prohibited. Nevertheless, neither shear deformation nor the nonlocal effect considered in the 'more accurate' beam theories can fully capture the effect of the inter-PF sliding. This reflects the distinct deformation mechanisms between an MT and its equivalent continuous body.

  15. Dual beam optical system for pulsed laser ablation film deposition

    DOEpatents

    Mashburn, D.N.

    1996-09-24

    A laser ablation apparatus having a laser source outputting a laser ablation beam includes an ablation chamber having a sidewall, a beam divider for dividing the laser ablation beam into two substantially equal halves, and a pair of mirrors for converging the two halves on a surface of the target from complementary angles relative to the target surface normal, thereby generating a plume of ablated material emanating from the target. 3 figs.

  16. Formation of pure Cu nanocrystals upon post-growth annealing of Cu-C material obtained from focused electron beam induced deposition: comparison of different methods.

    PubMed

    Szkudlarek, Aleksandra; Rodrigues Vaz, Alfredo; Zhang, Yucheng; Rudkowski, Andrzej; Kapusta, Czesław; Erni, Rolf; Moshkalev, Stanislav; Utke, Ivo

    2015-01-01

    In this paper we study in detail the post-growth annealing of a copper-containing material deposited with focused electron beam induced deposition (FEBID). The organometallic precursor Cu(II)(hfac)2 was used for deposition and the results were compared to that of compared to earlier experiments with (hfac)Cu(I)(VTMS) and (hfac)Cu(I)(DMB). Transmission electron microscopy revealed the deposition of amorphous material from Cu(II)(hfac)2. In contrast, as-deposited material from (hfac)Cu(I)(VTMS) and (hfac)Cu(I)(DMB) was nano-composite with Cu nanocrystals dispersed in a carbonaceous matrix. After annealing at around 150-200 °C all deposits showed the formation of pure Cu nanocrystals at the outer surface of the initial deposit due to the migration of Cu atoms from the carbonaceous matrix containing the elements carbon, oxygen, and fluorine. Post-irradiation of deposits with 200 keV electrons in a transmission electron microscope favored the formation of Cu nanocrystals within the carbonaceous matrix of freestanding rods and suppressed the formation on their surface. Electrical four-point measurements on FEBID lines from Cu(hfac)2 showed five orders of magnitude improvement in conductivity when being annealed conventionally and by laser-induced heating in the scanning electron microscope chamber.

  17. Heavy-ion beam induced effects in enriched gadolinium target films prepared by molecular plating

    NASA Astrophysics Data System (ADS)

    Mayorov, D. A.; Tereshatov, E. E.; Werke, T. A.; Frey, M. M.; Folden, C. M.

    2017-09-01

    A series of enriched gadolinium (Gd, Z = 64) targets was prepared using the molecular plating process for nuclear physics experiments at the Cyclotron Institute at Texas A&M University. After irradiation with 48Ca and 45Sc projectiles at center-of-target energies of Ecot = 3.8-4.7 MeV/u, the molecular films displayed visible discoloration. The morphology of the films was examined and compared to the intact target surface. The thin films underwent a heavy-ion beam-induced density change as identified by scanning electron microscopy and α-particle energy loss measurements. The films became thinner and more homogenous, with the transformation occurring early on in the irradiation. This transformation is best described as a crystalline-to-amorphous phase transition induced by atomic displacement and destruction of structural order of the original film. The chemical composition of the thin films was surveyed using energy dispersive spectroscopy and X-ray diffraction, with the results confirming the complex chemistry of the molecular films previously noted in other publications.

  18. Bandgap Tuning of GaAs/GaAsSb Core-Shell Nanowires Grown by Molecular Beam Epitaxy

    DTIC Science & Technology

    2015-09-21

    SECURITY CLASSIFICATION OF: Semiconductor nanowires have been identified as a viable technology for next-generation infrared (IR) photodetectors with... nanowires , by varying the Sb content using Ga-assisted molecular beam epitaxy. An increase in Sb content leads to strain accumulation in shell...manifesting in rough surface morphology, multifaceted growths, curved nanowires , and deterioration in the 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE

  19. Mechanical properties of ultrahigh molecular weight PHEMA hydrogels synthesized using initiated chemical vapor deposition.

    PubMed

    Bose, Ranjita K; Lau, Kenneth K S

    2010-08-09

    In this work, poly(2-hydroxyethyl methacrylate) (PHEMA), a widely used hydrogel, is synthesized using initiated chemical vapor deposition (iCVD), a one-step surface polymerization that does not use any solvents. iCVD synthesis is capable of producing linear stoichiometric polymers that are free from entrained unreacted monomer or solvent and, thus, do not require additional purification steps. The resulting films, therefore, are found to be noncytotoxic and also have low nonspecific protein adsorption. The kinetics of iCVD polymerization are tuned so as to achieve rapid deposition rates ( approximately 1.5 microm/min), which in turn yield ultrahigh molecular weight polymer films that are mechanically robust with good water transport and swellability. The films have an extremely high degree of physical chain entanglement giving rise to high tensile modulus and storage modulus without the need for chemical cross-linking that compromises hydrophilicity.

  20. Molecular carbon nitride ion beams for enhanced corrosion resistance of stainless steel

    NASA Astrophysics Data System (ADS)

    Markwitz, A.; Kennedy, J.

    2017-10-01

    A novel approach is presented for molecular carbon nitride beams to coat stainless surfaces steel using conventional safe feeder gases and electrically conductive sputter targets for surface engineering with ion implantation technology. GNS Science's Penning type ion sources take advantage of the breaking up of ion species in the plasma to assemble novel combinations of ion species. To test this phenomenon for carbon nitride, mixtures of gases and sputter targets were used to probe for CN+ ions for simultaneous implantation into stainless steel. Results from mass analysed ion beams show that CN+ and a variety of other ion species such as CNH+ can be produced successfully. Preliminary measurements show that the corrosion resistance of stainless steel surfaces increased sharply when implanting CN+ at 30 keV compared to reference samples, which is interesting from an application point of view in which improved corrosion resistance, surface engineering and short processing time of stainless steel is required. The results are also interesting for novel research in carbon-based mesoporous materials for energy storage applications and as electrode materials for electrochemical capacitors, because of their high surface area, electrical conductivity, chemical stability and low cost.

  1. Electron-driven and thermal chemistry during water-assisted purification of platinum nanomaterials generated by electron beam induced deposition

    PubMed Central

    Warneke, Jonas; Kopyra, Janina

    2018-01-01

    Focused electron beam induced deposition (FEBID) is a versatile tool for the direct-write fabrication of nanostructures on surfaces. However, FEBID nanostructures are usually highly contaminated by carbon originating from the precursor used in the process. Recently, it was shown that platinum nanostructures produced by FEBID can be efficiently purified by electron irradiation in the presence of water. If such processes can be transferred to FEBID deposits produced from other carbon-containing precursors, a new general approach to the generation of pure metallic nanostructures could be implemented. Therefore this study aims to understand the chemical reactions that are fundamental to the water-assisted purification of platinum FEBID deposits generated from trimethyl(methylcyclopentadienyl)platinum(IV) (MeCpPtMe3). The experiments performed under ultrahigh vacuum conditions apply a combination of different desorption experiments coupled with mass spectrometry to analyse reaction products. Electron-stimulated desorption monitors species that leave the surface during electron exposure while post-irradiation thermal desorption spectrometry reveals products that evolve during subsequent thermal treatment. In addition, desorption of volatile products was also observed when a deposit produced by electron exposure was subsequently brought into contact with water. The results distinguish between contributions of thermal chemistry, direct chemistry between water and the deposit, and electron-induced reactions that all contribute to the purification process. We discuss reaction kinetics for the main volatile products CO and CH4 to obtain mechanistic information. The results provide novel insights into the chemistry that occurs during purification of FEBID nanostructures with implications also for the stability of the carbonaceous matrix of nanogranular FEBID materials under humid conditions. PMID:29441253

  2. Electron Beam "Writes" Silicon On Sapphire

    NASA Technical Reports Server (NTRS)

    Heinemann, Klaus

    1988-01-01

    Method of growing silicon on sapphire substrate uses beam of electrons to aid growth of semiconductor material. Silicon forms as epitaxial film in precisely localized areas in micron-wide lines. Promising fabrication method for fast, densely-packed integrated circuits. Silicon deposited preferentially in contaminated substrate zones and in clean zone irradiated by electron beam. Electron beam, like surface contamination, appears to stimulate decomposition of silane atmosphere.

  3. Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bazioti, C.; Kehagias, Th.; Pavlidou, E.

    2015-10-21

    We investigate the structural properties of a series of high alloy content InGaN epilayers grown by plasma-assisted molecular beam epitaxy, employing the deposition temperature as variable under invariant element fluxes. Using transmission electron microscopy methods, distinct strain relaxation modes were observed, depending on the indium content attained through temperature adjustment. At lower indium contents, strain relaxation by V-pit formation dominated, with concurrent formation of an indium-rich interfacial zone. With increasing indium content, this mechanism was gradually substituted by the introduction of a self-formed strained interfacial InGaN layer of lower indium content, as well as multiple intrinsic basal stacking faults andmore » threading dislocations in the rest of the film. We show that this interfacial layer is not chemically abrupt and that major plastic strain relaxation through defect introduction commences upon reaching a critical indium concentration as a result of compositional pulling. Upon further increase of the indium content, this relaxation mode was again gradually succeeded by the increase in the density of misfit dislocations at the InGaN/GaN interface, leading eventually to the suppression of the strained InGaN layer and basal stacking faults.« less

  4. Neutron measurements from beam-target reactions at the ELISE neutral beam test facility

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Xufei, X., E-mail: xiexufei@pku.edu.cn; Fan, T.; Nocente, M.

    2014-11-15

    Measurements of 2.5 MeV neutron emission from beam-target reactions performed at the ELISE neutral beam test facility are presented in this paper. The measurements are used to study the penetration of a deuterium beam in a copper dump, based on the observation of the time evolution of the neutron counting rate from beam-target reactions with a liquid scintillation detector. A calculation based on a local mixing model of deuterium deposition in the target up to a concentration of 20% at saturation is used to evaluate the expected neutron yield for comparison with data. The results are of relevance to understandmore » neutron emission associated to beam penetration in a solid target, with applications to diagnostic systems for the SPIDER and MITICA Neutral Beam Injection prototypes.« less

  5. Material for "Substrate temperature controls molecular orientation in two-component vapor- deposited glasses." Soft Matter, 2016, 12, 3265.

    DOE Data Explorer

    Jiang, Jing [Nanjing University; Walters, Diane M [University of Wisconsin-Madison; Zhou, Dongshan [Nanjing University; Ediger, Mark D [University of Wisconsin-Madison

    2016-08-18

    Data set for work presented in Jiang, J.; Walters, D. M.; Zhou, D.; Ediger, M. D. “Substrate Temperature Controls Molecular Orientation in Two -Component Vapor-deposited Glasses.” Soft Matt. 2016, 12, 3265. Includes all data presented in the manuscript as well as example raw data and analysis.

  6. Photoluminescence of Ta2O5 films formed by the molecular layer deposition method

    NASA Astrophysics Data System (ADS)

    Baraban, A. P.; Dmitriev, V. A.; Prokof'ev, V. A.; Drozd, V. E.; Filatova, E. O.

    2016-04-01

    Ta2O5 films of different thicknesses (20-100 nm) synthesized by the molecular layer deposition method on p-type silicon substrates and thermally oxidized silicon substrates have been studied by the methods of high-frequency capacitance-voltage characteristics and photoluminescence. A hole-conduction channel is found to form in the Si-Ta2O5-field electrode system. A model of the electronic structure of Ta2O5 films is proposed based on an analysis of the measured PL spectra and performed electrical investigations.

  7. Enhanced conductivity of tunnel junctions employing semimetallic nanoparticles through variation in growth temperature and deposition

    NASA Astrophysics Data System (ADS)

    Nair, Hari P.; Crook, Adam M.; Bank, Seth R.

    2010-05-01

    We report ErAs nanoparticle-enhanced tunnel junctions grown on GaAs with low specific resistances (<2×10-4 Ω cm-2), approximately tenfold lower than previous reports. A reduction in specific resistance was achieved by modifying the ErAs nanoparticle morphology through the molecular beam epitaxial growth conditions, particularly lower growth temperatures. A further investigation of the variation in tunnel junction resistance with the amount of ErAs deposited and growth temperature shows that nanoparticle surface coverage may not be the only factor determining tunnel junction resistance.

  8. Tuning the Kondo effect in thin Au films by depositing a thin layer of Au on molecular spin-dopants.

    PubMed

    Ataç, D; Gang, T; Yilmaz, M D; Bose, S K; Lenferink, A T M; Otto, C; de Jong, M P; Huskens, J; van der Wiel, W G

    2013-09-20

    We report on the tuning of the Kondo effect in thin Au films containing a monolayer of cobalt(II) terpyridine complexes by altering the ligand structure around the Co(2+) ions by depositing a thin Au capping layer on top of the monolayer on Au by magnetron sputtering (more energetic) and e-beam evaporation (softer). We show that the Kondo effect is slightly enhanced with respect to that of the uncapped film when the cap is deposited by evaporation, and significantly enhanced when magnetron sputtering is used. The Kondo temperature (TK) increases from 3 to 4.2/6.2 K for the evaporated/sputtered caps. X-ray absorption spectroscopy and surface-enhanced Raman spectroscopy investigation showed that the organic ligands remain intact upon Au e-beam evaporation; however, sputtering inflicts significant change in the Co(2+) electronic environment. The location of the monolayer-on the surface or embedded in the film-has a small effect. However, the damage of Co-N bonds induced by sputtering has a drastic effect on the increase of the impurity-electron interaction. This opens up the way for tuning of the magnetic impurity states, e.g. spin quantum number, binding energy with respect to the host Fermi energy, and overlap via the ligand structure around the ions.

  9. High-purity 3D nano-objects grown by focused-electron-beam induced deposition.

    PubMed

    Córdoba, Rosa; Sharma, Nidhi; Kölling, Sebastian; Koenraad, Paul M; Koopmans, Bert

    2016-09-02

    To increase the efficiency of current electronics, a specific challenge for the next generation of memory, sensing and logic devices is to find suitable strategies to move from two- to three-dimensional (3D) architectures. However, the creation of real 3D nano-objects is not trivial. Emerging non-conventional nanofabrication tools are required for this purpose. One attractive method is focused-electron-beam induced deposition (FEBID), a direct-write process of 3D nano-objects. Here, we grow 3D iron and cobalt nanopillars by FEBID using diiron nonacarbonyl Fe2(CO)9, and dicobalt octacarbonyl Co2(CO)8, respectively, as starting materials. In addition, we systematically study the composition of these nanopillars at the sub-nanometer scale by atom probe tomography, explicitly mapping the homogeneity of the radial and longitudinal composition distributions. We show a way of fabricating high-purity 3D vertical nanostructures of ∼50 nm in diameter and a few micrometers in length. Our results suggest that the purity of such 3D nanoelements (above 90 at% Fe and above 95 at% Co) is directly linked to their growth regime, in which the selected deposition conditions are crucial for the final quality of the nanostructure. Moreover, we demonstrate that FEBID and the proposed characterization technique not only allow for growth and chemical analysis of single-element structures, but also offers a new way to directly study 3D core-shell architectures. This straightforward concept could establish a promising route to the design of 3D elements for future nano-electronic devices.

  10. High-purity 3D nano-objects grown by focused-electron-beam induced deposition

    NASA Astrophysics Data System (ADS)

    Córdoba, Rosa; Sharma, Nidhi; Kölling, Sebastian; Koenraad, Paul M.; Koopmans, Bert

    2016-09-01

    To increase the efficiency of current electronics, a specific challenge for the next generation of memory, sensing and logic devices is to find suitable strategies to move from two- to three-dimensional (3D) architectures. However, the creation of real 3D nano-objects is not trivial. Emerging non-conventional nanofabrication tools are required for this purpose. One attractive method is focused-electron-beam induced deposition (FEBID), a direct-write process of 3D nano-objects. Here, we grow 3D iron and cobalt nanopillars by FEBID using diiron nonacarbonyl Fe2(CO)9, and dicobalt octacarbonyl Co2(CO)8, respectively, as starting materials. In addition, we systematically study the composition of these nanopillars at the sub-nanometer scale by atom probe tomography, explicitly mapping the homogeneity of the radial and longitudinal composition distributions. We show a way of fabricating high-purity 3D vertical nanostructures of ˜50 nm in diameter and a few micrometers in length. Our results suggest that the purity of such 3D nanoelements (above 90 at% Fe and above 95 at% Co) is directly linked to their growth regime, in which the selected deposition conditions are crucial for the final quality of the nanostructure. Moreover, we demonstrate that FEBID and the proposed characterization technique not only allow for growth and chemical analysis of single-element structures, but also offers a new way to directly study 3D core-shell architectures. This straightforward concept could establish a promising route to the design of 3D elements for future nano-electronic devices.

  11. [Preparation and transmissivity of ZnS nanocolumn thin films with glancing angle deposition technology].

    PubMed

    Lu, Li-Fang; Xu, Zheng; Zhang, Fu-Jun; Zhao, Su-Ling; Song, Dan-Dan; Li, Jun-Ming; Wang, Yong-Sheng; Xu, Xu-Rong

    2010-02-01

    Nanocrystalline ZnS thin films were fabricated by glancing angle deposition (GLAD) technology in an electron beam evaporation system. Deposition was carried out in the custom vacuum chamber at a base pressure 3 x 10(-4) Pa, and the deposition rate was fixed at 0.2 nm x s(-1). ZnS films were deposited on pieces of indium tin oxide (ITO) substrates when the oblique angle of the substrate relative to the incoming molecular flux was set to 0 degrees, 80 degrees and 85 degrees off the substrate normal respectively. X-ray diffraction (XRD) spectra and scanning electron microscope (SEM) images showed that ZnS nanocrystalline films were formed on the substrates at different oblique angle, but the nanocolumn structure was only formed under the situation of alpha = 80 degrees and 85 degrees. The dynamics during the deposition process of the ZnS films at alpha = 0 degrees, 80 degrees and 85 degrees was analyzed. The transmitted spectra of ZnS thin films deposited on ITO substrates showed that the ZnS nanocolumn thin films could enhance the transmissivity in visible range. The ZnS nanocolumn could be used into electroluminescence device, and it would enhance the luminous efficiency of the device.

  12. Improved rate control for electron-beam evaporation and evaluation of optical performance improvements.

    PubMed

    Gevelber, Michael; Xu, Bing; Smith, Douglas

    2006-03-01

    A new deposition-rate-control and electron-beam-gun (e-gun) strategy was developed that significantly reduces the growth-rate variations for e-beam-deposited SiO2 coatings. The resulting improvements in optical performance are evaluated for multilayer bandpass filters. The adverse effect of uneven silica-source depletion on coating spectral performances during long deposition runs is discussed.

  13. Fabrication of IrSi(3)/p-Si Schottky diodes by a molecular beam epitaxy technique

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Iannelli, J. M.

    1990-01-01

    IrSi(3)/p-Si Schottky diodes have been fabricated by a molecular beam epitaxy technique at 630 C. Good surface morphology was observed for IrSi(3) layers grown at temperatures below 680 C, and an increasing tendency to form islands is observed in samples grown at higher temperatures. Good diode current-voltage characteristics were observed and Schottky barrier heights of 0.14-0.18 eV were determined by activation energy analysis and spectral response measurement.

  14. Numerical Simulation of the Evolution of Solidification Microstructure in Laser Deposition (Preprint)

    DTIC Science & Technology

    2007-08-01

    the deposition process. This model is applied to Ti-6Al-4V. 1. Instruction Laser deposition is an extension of the laser cladding process...uses a focused laser beam as a heat source to create a melt pool on an underlying substrate. Powder material is then injected into the melt pool...melt pool Deposited layer Remelted zone Substrate Shielding gas Laser beam Powder The governing equations have been discretized using a

  15. Molecular dynamics simulation of temperature effects on deposition of Cu film on Si by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zhu, Guo; Sun, Jiangping; Zhang, Libin; Gan, Zhiyin

    2018-06-01

    The temperature effects on the growth of Cu thin film on Si (0 0 1) in the context of magnetron sputtering deposition were systematically studied using molecular dynamics (MD) method. To improve the comparability of simulation results at varying temperatures, the initial status data of incident Cu atoms used in all simulations were read from an identical file via LAMMPS-Python interface. In particular, crystalline microstructure, interface mixing and internal stress of Cu thin film deposited at different temperatures were investigated in detail. With raising the substrate temperature, the interspecies mixed volume and the proportion of face-centered cubic (fcc) structure in the deposited film both increased, while the internal compressive stress decreased. It was found that the fcc structure in the deposited Cu thin films was 〈1 1 1〉 oriented, which was reasonably explained by surface energy minimization and the selectivity of bombardment energy to the crystalline planes. The quantified analysis of interface mixing revealed that the diffusion of Cu atoms dominated the interface mixing, and the injection of incident Cu atoms resulted in the densification of phase near the film-substrate interface. More important, the distribution of atomic stress indicated that the compressive stress was mainly originated from the film-substrate interface, which might be attributed to the densification of interfacial phase at the initial stage of film deposition.

  16. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy.

    PubMed

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R

    2014-04-01

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  17. Structural Characterization of Vapor-deposited Organic Glasses

    NASA Astrophysics Data System (ADS)

    Gujral, Ankit

    Physical vapor deposition, a common route of thin film fabrication for organic electronic devices, has recently been shown to produce organic glassy films with enhanced kinetic stability and anisotropic structure. Anisotropic structures are of interest in the organic electronics community as it has been shown that certain structures lead to enhanced device performance, such as higher carrier mobility and better light outcoupling. A mechanism proposed to explain the origin of the stability and anisotropy of vapor-deposited glasses relies on two parameters: 1) enhanced molecular mobility at the free surface (vacuum interface) of a glass, and 2) anisotropic molecular packing at the free surface of the supercooled liquid of the glass-forming system. By vapor-depositing onto a substrate maintained at Tsubstrate < Tg (where Tg is the glass transition temperature), the enhanced molecular mobility at the free surface allows every molecule that lands on the surface to at least partially equilibrate to the preferred anisotropic molecular packing motifs before being buried by further deposition. The extent of equilibration depends on the mobility at the surface, controlled by Tsubstrate, and the residence time on the free surface, controlled by the rate of deposition. This body of work deals with the optimization of deposition conditions and system chemistry to prepare and characterize films with functional anisotropic structures. Here, we show that structural anisotropy can be attained for a variety of molecular systems including a rod-shaped non-mesogen, TPD, a rod-shaped smectic mesogen, itraconazole, two discotic mesogens, phenanthroperylene-ester and triphenylene-ester, and a disc-shaped non-mesogen, m-MTDATA. Experimental evidence is also provided of the anisotropic molecular packing at the free surface (vacuum interface) for the disc-shaped systems that are consistent with the expectations of the proposed mechanism and the final bulk state of the vapor-deposited

  18. EDITORIAL: Atomic layer deposition Atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Godlewski, Marek

    2012-07-01

    The growth method of atomic layer deposition (ALD) was introduced in Finland by Suntola under the name of atomic layer epitaxy (ALE). The method was originally used for deposition of thin films of sulphides (ZnS, CaS, SrS) activated with manganese or rare-earth ions. Such films were grown for applications in thin-film electroluminescence (TFEL) displays. The ALE mode of growth was also tested in the case of molecular beam epitaxy. Films grown by ALD are commonly polycrystalline or even amorphous. Thus, the name ALE has been replaced by ALD. In the 80s ALD was developed mostly in Finland and neighboring Baltic countries. Deposition of a range of different materials was demonstrated at that time, including II-VI semiconductors (e.g. CdTe, CdS) and III-V (e.g. GaAs, GaN), with possible applications in e.g. photovoltaics. The number of publications on ALD was slowly increasing, approaching about 100 each year. A real boom in interest came with the development of deposition methods of thin films of high-k dielectrics. This research was motivated by a high leakage current in field-effect transistors with SiO2-based gate dielectrics. In 2007 Intel introduced a new generation of integrated circuits (ICs) with thin films of HfO2 used as gate isolating layers. In these and subsequent ICs, films of HfO2 are deposited by the ALD method. This is due to their unique properties. The introduction of ALD to the electronics industry led to a booming interest in the ALD growth method, with the number of publications increasing rapidly to well above 1000 each year. A number of new applications were proposed, as reflected in this special issue of Semiconductor Science and Technology. The included articles cover a wide range of possible applications—in microelectronics, transparent electronics, optoelectronics, photovoltaics and spintronics. Research papers and reviews on the basics of ALD growth are also included, reflecting a growing interest in precursor chemistry and growth

  19. Commercial production of QWIP wafers by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Fastenau, J. M.; Liu, W. K.; Fang, X. M.; Lubyshev, D. I.; Pelzel, R. I.; Yurasits, T. R.; Stewart, T. R.; Lee, J. H.; Li, S. S.; Tidrow, M. Z.

    2001-06-01

    As the performance of quantum well infrared photodetectors (QWIPs) and QWIP-based imaging systems continues to improve, their demand will undoubtedly grow. This points to the importance of a reliable commercial supplier of semiconductor QWIP material on three inch and, in the near future, four-inch substrates. Molecular beam epitaxy (MBE) is the preferred technique for growing the demanding QWIP structure, as tight control is required over the material composition and layer thickness. We report the current status of MBE-grown GaAs-based QWIP structures in a commercial production environment at IQE. Uniformity data and run-to-run reproducibility on both three-inch and four-inch GaAs substrates are quantified using alloy composition and QW thickness. Initial results on growth technology transfer to a multi-wafer MBE reactor are also presented. High-resolution X-ray diffraction measurements demonstrate GaAs QW thickness variations and AlGaAs barrier compositions changes to be less than 4% and 1% Al, respectively, across four-inch QWIP wafers from both single- and multiple-wafer MBE platforms.

  20. Molecular beam epitaxy of InN nanowires on Si

    NASA Astrophysics Data System (ADS)

    Golam Sarwar, A. T. M.; Carnevale, Santino D.; Kent, Thomas F.; Laskar, Masihhur R.; May, Brelon J.; Myers, Roberto C.

    2015-10-01

    We report on a systematic growth study of the nucleation process of InN nanowires on Si(1 1 1) substrates using plasma assisted molecular beam epitaxy (PAMBE). Samples are grown with various substrate temperatures and III/V ratios. Scanning electron microscopy, X-ray diffraction spectroscopy, energy dispersive X-ray spectroscopy, and photoluminescence are carried out to map out the variation in structural and optical properties versus growth conditions. Statistical averages of areal density, height, and radius are mapped as a function of substrate temperature and III/V ratio. Three different morphological phases are identified on the growth surface: InN, α-In and β-In. Based on SEM image analysis of samples grown at different conditions, the formation mechanism of these phases is proposed. Finally, the growth phase diagram of PAMBE grown InN on Si under N-rich condition is presented, and tapered versus non-tapered growth conditions are identified. It is found that high growth temperature and low III/V ratio plays a critical role in the growth of non-tapered InN nanowires.

  1. Mechanical characteristics of a tool steel layer deposited by using direct energy deposition

    NASA Astrophysics Data System (ADS)

    Baek, Gyeong Yun; Shin, Gwang Yong; Lee, Eun Mi; Shim, Do Sik; Lee, Ki Yong; Yoon, Hi-Seak; Kim, Myoung Ho

    2017-07-01

    This study focuses on the mechanical characteristics of layered tool steel deposited using direct energy deposition (DED) technology. In the DED technique, a laser beam bonds injected metal powder and a thin layer of substrate via melting. In this study, AISI D2 substrate was hardfaced with AISI H13 and M2 metal powders for mechanical testing. The mechanical and metallurgical characteristics of each specimen were investigated via microstructure observation and hardness, wear, and impact tests. The obtained characteristics were compared with those of heat-treated tool steel. The microstructures of the H13- and M2-deposited specimens show fine cellular-dendrite solidification structures due to melting and subsequent rapid cooling. Moreover, the cellular grains of the deposited M2 layer were smaller than those of the H13 structure. The hardness and wear resistance were most improved in the M2-deposited specimen, yet the H13-deposited specimen had higher fracture toughness than the M2-deposited specimen and heat-treated D2.

  2. Germanium growth on electron beam lithography patterned Si3N4/Si(001) substrate using molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sarkar, Subhendu Sinha; Katiyar, Ajit K.; Sarkar, Arijit; Dhar, Achintya; Rudra, Arun; Khatri, Ravinder K.; Ray, Samit Kumar

    2018-04-01

    It is important to investigate the growth dynamics of Ge adatoms under different surface stress regimes of the patterned dielectric to control the selective growth of self-assembled Ge nanostructures on silicon. In the present work, we have studied the growth of Ge by molecular beam epitaxy on nanometer scale patterned Si3N4/Si(001) substrates generated using electron beam lithography. The pitch of the patterns has been varied to investigate its effect on the growth of Ge in comparison to un-patterned Si3N4. For the patterned Si3N4 film, Ge did not desorbed completely from the Si3N4 film and hence no site selective growth pattern is observed. Instead, depending upon the pitch, Ge growth has occurred in different growth modes around the openings in the Si3N4. For the un-patterned substrate, the morphology exhibits the occurrence of uniform 3D clustering of Ge adatoms on Si3N4 film. This variation in the growth modes of Ge is attributed to the variation of residual stress in the Si3N4 film for different pitch of holes, which has been confirmed theoretically through Comsol Multiphysics simulation. The variation in stress for different pitches resulted in modulation of surface energy of the Si3N4 film leading to the different growth modes of Ge.

  3. Low-Temperature Molecular Layer Deposition Using Monofunctional Aromatic Precursors and Ozone-Based Ring-Opening Reactions.

    PubMed

    Svärd, Laura; Putkonen, Matti; Kenttä, Eija; Sajavaara, Timo; Krahl, Fabian; Karppinen, Maarit; Van de Kerckhove, Kevin; Detavernier, Christophe; Simell, Pekka

    2017-09-26

    Molecular layer deposition (MLD) is an increasingly used deposition technique for producing thin coatings consisting of purely organic or hybrid inorganic-organic materials. When organic materials are prepared, low deposition temperatures are often required to avoid decomposition, thus causing problems with low vapor pressure precursors. Monofunctional compounds have higher vapor pressures than traditional bi- or trifunctional MLD precursors, but do not offer the required functional groups for continuing the MLD growth in subsequent deposition cycles. In this study, we have used high vapor pressure monofunctional aromatic precursors in combination with ozone-triggered ring-opening reactions to achieve sustained sequential growth. MLD depositions were carried out by using three different aromatic precursors in an ABC sequence, namely with TMA + phenol + O 3 , TMA + 3-(trifluoromethyl)phenol + O 3 , and TMA + 2-fluoro-4-(trifluoromethyl)benzaldehyde + O 3 . Furthermore, the effect of hydrogen peroxide as a fourth step was evaluated for all studied processes resulting in a four-precursor ABCD sequence. According to the characterization results by ellipsometry, infrared spectroscopy, and X-ray reflectivity, self-limiting MLD processes could be obtained between 75 and 150 °C with each of the three aromatic precursors. In all cases, the GPC (growth per cycle) decreased with increasing temperature. In situ infrared spectroscopy indicated that ring-opening reactions occurred in each ABC sequence. Compositional analysis using time-of-flight elastic recoil detection indicated that fluorine could be incorporated into the film when 3-(trifluoromethyl)phenol and 2-fluoro-4-(trifluoromethyl)benzaldehyde were used as precursors.

  4. Ion beam sputtering of fluoropolymers. [etching polymer films and target surfaces

    NASA Technical Reports Server (NTRS)

    Sovey, J. S.

    1978-01-01

    Ion beam sputter processing rates as well as pertinent characteristics of etched targets and films are described. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Sputter target and film characteristics documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs are included.

  5. Surface engineering of zirconium particles by molecular layer deposition: Significantly enhanced electrostatic safety at minimum loss of the energy density

    NASA Astrophysics Data System (ADS)

    Qin, Lijun; Yan, Ning; Hao, Haixia; An, Ting; Zhao, Fengqi; Feng, Hao

    2018-04-01

    Because of its high volumetric heat of oxidation, Zr powder is a promising high energy fuel/additive for rocket propellants. However, the application of Zr powder is restricted by its ultra-high electrostatic discharge sensitivity, which poses great hazards for handling, transportation and utilization of this material. By performing molecular layer deposition of polyimide using 1,2,4,5-benzenetetracarboxylic anhydride and ethylenediamine as the precursors, Zr particles can be uniformly encapsulated by thin layers of the polymer. The thicknesses of the encapsulation layers can be precisely controlled by adjusting the number of deposition cycle. High temperature annealing converts the polymer layer into a carbon coating. Results of thermal analyses reveal that the polymer or carbon coatings have little negative effect on the energy release process of the Zr powder. By varying the thickness of the polyimide or carbon coating, electrostatic discharge sensitivity of the Zr powder can be tuned in a wide range and its uncontrolled ignition hazard can be virtually eliminated. This research demonstrates the great potential of molecular layer deposition in effectively modifying the surface properties of highly reactive metal based energetic materials with minimum sacrifices of their energy densities.

  6. The effect of the geometry and material properties of a carbon joint produced by electron beam induced deposition on the electrical resistance of a multiwalled carbon nanotube-to-metal contact interface

    NASA Astrophysics Data System (ADS)

    Rykaczewski, Konrad; Henry, Matthew R.; Kim, Song-Kil; Fedorov, Andrei G.; Kulkarni, Dhaval; Singamaneni, Srikanth; Tsukruk, Vladimir V.

    2010-01-01

    Multiwall carbon nanotubes (MWNTs) are promising candidates for yielding next generation electrical and electronic devices such as interconnects and tips for conductive force microscopy. One of the main challenges in MWNT implementation in such devices is the high contact resistance of the MWNT-metal electrode interface. Electron beam induced deposition (EBID) of an amorphous carbon interface has previously been demonstrated to simultaneously lower the electrical contact resistance and improve the mechanical characteristics of the MWNT-electrode connection. In this work, we investigate the influence of process parameters, such as the electron beam energy, current, geometry, and deposition time, on the EBID-made carbon joint geometry and electrical contact resistance. The influence of the composition of the deposited material on its resistivity is also investigated. The relative importance of each component of the contact resistance and the limiting factor of the overall electrical resistance of a MWNT-based interconnect is determined through a combination of a model analysis and comprehensive experiments.

  7. Molecular beam mass spectrometer equipped with a catalytic wall reactor for in situ studies in high temperature catalysis research

    NASA Astrophysics Data System (ADS)

    Horn, R.; Ihmann, K.; Ihmann, J.; Jentoft, F. C.; Geske, M.; Taha, A.; Pelzer, K.; Schlögl, R.

    2006-05-01

    A newly developed apparatus combining a molecular beam mass spectrometer and a catalytic wall reactor is described. The setup has been developed for in situ studies of high temperature catalytic reactions (>1000°C), which involve besides surface reactions also gas phase reactions in their mechanism. The goal is to identify gas phase radicals by threshold ionization. A tubular reactor, made from the catalytic material, is positioned in a vacuum chamber. Expansion of the gas through a 100μm sampling orifice in the reactor wall into differentially pumped nozzle, skimmer, and collimator chambers leads to the formation of a molecular beam. A quadrupole mass spectrometer with electron impact ion source designed for molecular beam inlet and threshold ionization measurements is used as the analyzer. The sampling time from nozzle to detector is estimated to be less than 10ms. A detection time resolution of up to 20ms can be reached. The temperature of the reactor is measured by pyrometry. Besides a detailed description of the setup components and the physical background of the method, this article presents measurements showing the performance of the apparatus. After deriving the shape and width of the energy spread of the ionizing electrons from measurements on N2 and He we estimated the detection limit in threshold ionization measurements using binary mixtures of CO in N2 to be in the range of several hundreds of ppm. Mass spectra and threshold ionization measurements recorded during catalytic partial oxidation of methane at 1250°C on a Pt catalyst are presented. The detection of CH3• radicals is successfully demonstrated.

  8. Nanocomposite TiN films with embedded MoS2 inorganic fullerenes produced by combining supersonic cluster beam deposition with cathodic arc reactive evaporation

    NASA Astrophysics Data System (ADS)

    Piazzoni, C.; Blomqvist, M.; Podestà, A.; Bardizza, G.; Bonati, M.; Piseri, P.; Milani, P.; Davies, C.; Hatto, P.; Ducati, C.; Sedláčková, K.; Radnóczi, G.

    2008-01-01

    We report the production and characterization of nanocomposite thin films consisting of a titanium nitride matrix with embedded molybdenum disulphide fullerene-like nanoparticles. This was achieved by combining a cluster source generating a pulsed supersonic beam of MoS2 clusters with an industrial cathodic arc reactive evaporation apparatus used for TiN deposition. Cluster-assembled films show the presence of MoS2 nanocages and nanostructures and the survival of such structures dispersed in the TiN matrix in the co-deposited samples. Nanotribological characterization by atomic force microscopy shows that the presence of MoS2 nanoparticles even in very low concentration modifies the behaviour of the TiN matrix.

  9. Molecular-beam epitaxy of 7-8 μm range quantum-cascade laser heterostructures

    NASA Astrophysics Data System (ADS)

    Babichev, A. V.; Denisov, D. V.; Filimonov, A. V.; Nevedomsky, V. N.; Kurochkin, A. S.; Gladyshev, A. G.; Karachinsky, L. Ya; Sokolovskii, G. S.; Novikov, I. I.; Bousseksou, A.; Egorov, A. Yu

    2017-11-01

    The method of molecular beam epitaxy demonstrates the possibility to create high quality heterostructures of quantum cascade lasers in a spectral range of 7-8 μm containing 50 quantum cascades in an active region. Design based on the principle of two-phonon resonant scattering is used. X-ray diffraction and transmission electron microscopy experiments confirm high structural properties of the created heterostructures, e.g. the identity of the composition and thickness of epitaxial layers in all 50 cascades. Edge-emitting lasers based on the grown heterostructure demonstrate lasing with threshold current density of 2.8 kA/cm2 at a temperature of 78 K.

  10. Adsorption calorimetry during metal vapor deposition on single crystal surfaces: Increased flux, reduced optical radiation, and real-time flux and reflectivity measurements

    NASA Astrophysics Data System (ADS)

    Sellers, Jason R. V.; James, Trevor E.; Hemmingson, Stephanie L.; Farmer, Jason A.; Campbell, Charles T.

    2013-12-01

    Thin films of metals and other materials are often grown by physical vapor deposition. To understand such processes, it is desirable to measure the adsorption energy of the deposited species as the film grows, especially when grown on single crystal substrates where the structure of the adsorbed species, evolving interface, and thin film are more homogeneous and well-defined in structure. Our group previously described in this journal an adsorption calorimeter capable of such measurements on single-crystal surfaces under the clean conditions of ultrahigh vacuum [J. T. Stuckless, N. A. Frei, and C. T. Campbell, Rev. Sci. Instrum. 69, 2427 (1998)]. Here we describe several improvements to that original design that allow for heat measurements with ˜18-fold smaller standard deviation, greater absolute accuracy in energy calibration, and, most importantly, measurements of the adsorption of lower vapor-pressure materials which would have previously been impossible. These improvements are accomplished by: (1) using an electron beam evaporator instead of a Knudsen cell to generate the metal vapor at the source of the pulsed atomic beam, (2) changing the atomic beam design to decrease the relative amount of optical radiation that accompanies evaporation, (3) adding an off-axis quartz crystal microbalance for real-time measurement of the flux of the atomic beam during calorimetry experiments, and (4) adding capabilities for in situ relative diffuse optical reflectivity determinations (necessary for heat signal calibration). These improvements are not limited to adsorption calorimetry during metal deposition, but also could be applied to better study film growth of other elements and even molecular adsorbates.

  11. Adsorption calorimetry during metal vapor deposition on single crystal surfaces: increased flux, reduced optical radiation, and real-time flux and reflectivity measurements.

    PubMed

    Sellers, Jason R V; James, Trevor E; Hemmingson, Stephanie L; Farmer, Jason A; Campbell, Charles T

    2013-12-01

    Thin films of metals and other materials are often grown by physical vapor deposition. To understand such processes, it is desirable to measure the adsorption energy of the deposited species as the film grows, especially when grown on single crystal substrates where the structure of the adsorbed species, evolving interface, and thin film are more homogeneous and well-defined in structure. Our group previously described in this journal an adsorption calorimeter capable of such measurements on single-crystal surfaces under the clean conditions of ultrahigh vacuum [J. T. Stuckless, N. A. Frei, and C. T. Campbell, Rev. Sci. Instrum. 69, 2427 (1998)]. Here we describe several improvements to that original design that allow for heat measurements with ~18-fold smaller standard deviation, greater absolute accuracy in energy calibration, and, most importantly, measurements of the adsorption of lower vapor-pressure materials which would have previously been impossible. These improvements are accomplished by: (1) using an electron beam evaporator instead of a Knudsen cell to generate the metal vapor at the source of the pulsed atomic beam, (2) changing the atomic beam design to decrease the relative amount of optical radiation that accompanies evaporation, (3) adding an off-axis quartz crystal microbalance for real-time measurement of the flux of the atomic beam during calorimetry experiments, and (4) adding capabilities for in situ relative diffuse optical reflectivity determinations (necessary for heat signal calibration). These improvements are not limited to adsorption calorimetry during metal deposition, but also could be applied to better study film growth of other elements and even molecular adsorbates.

  12. Dynamics of reflection high-energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)B GaAs substrates

    NASA Astrophysics Data System (ADS)

    Yen, M. Y.; Haas, T. W.

    1990-06-01

    We have observed intensity oscillations in reflection high-energy electron diffraction during molecular beam epitaxial growth of GaAs on (111)B GaAs substrates. These oscillations only exist over a narrow range of growth conditions and their behavior is strongly dependent on the migration kinetics of group III and the molecular dissociative reaction of group V elements.

  13. Molecular-beam heteroepitaxial growth and characterization of wide-band-gap semiconductor films and devices

    NASA Astrophysics Data System (ADS)

    Piquette, Eric Charles

    The thesis consists of two parts. Part I describes work on the molecular beam epitaxial (MBE) growth of GaN, AlN, and AlxGa 1-xN alloys, as well as efforts in the initial technical development and demonstration of nitride-based high power electronic devices. The major issues pertaining to MBE growth are discussed, including special requirements of the growth system, substrates, film nucleation, n - and p-type doping, and the dependence of film quality on growth parameters. The GaN films were characterized by a variety of methods, including high resolution x-ray diffraction, photoluminescence, and Hall effect measurement. It is found that the film polarity and extended defect density as well as quality of photoluminescence and electrical transport properties depend crucially on how the nitride layer is nucleated on the substrate and how the subsequent film surface morphology evolves, which can be controlled by the growth conditions. A technique is proposed and demonstrated that utilizes the control of morphology evolution to reduce defect density and improve the structural quality of MBE GaN films. In addition to growth, the design and processing of high voltage GaN Schottky diodes is presented, as well as an experimental study of sputter-deposited ohmic and rectifying metal contacts to GaN. Simple models for high power devices, based on materials properties such as minority carrier diffusion length and critical electric breakdown field, are used to estimate the voltage standoff capability, current carrying capacity, and maximum operating frequency of unipolar and bipolar GaN power devices. The materials and transport properties of GaN pertinent to high power device design were measured experimentally. High voltage Schottky rectifiers were fabricated which verify the impressive electric breakdown field of GaN (2--5 MV/cm). Electron beam induced current (EBIC) experiments were also conducted to measure the minority carrier diffusion length for both electrons and

  14. Molecular beam optical Stark spectroscopy of calcium monocyanide

    NASA Astrophysics Data System (ADS)

    Steimle, Timothy C.; Fletcher, David A.; Jung, Kook Y.; Scurlock, Christopher T.

    1992-09-01

    The 617.7 and 614.7 nm bands of calcium monocyanide, CaNC/CaCN, have been recorded at high resolution by laser-induced fluorescence using a supersonic molecular beam. The two bands consist of twelve branches that are assigned to a case a (0,0,0)A 2Πr-(0,0,0)X 2Σ+ transition. A reduction of the data to an effective Hamiltonian model produced the spectroscopic parameters (cm-1): T00= 16229.5417(26), B″=0.13499(14), γ″=6.1837(33)×10-4, A'=77.6451(40), B'=0.15027(23), AD'=2.69(11) × 10-3, D'= -3.50(25) × 10-5, p'=0.0754(18), q'=-0.04808(87), qD''= 2.64(65) × 10-5. It is proposed that the anomalous values of the excited state parameters arise because of Renner-Teller interactions. The magnitude of the permanent electric dipoles, |μ|, were also determined and are 5.949(1) D[A 2Π1/2(0,0,0),J= 0.5] and 6.895(9) D[X 2Σ+(0,0,0),J= 1.5]. The large value of |μ| is consistent with an isocyanide structure, CaNC. A comparison with theoretical predictions is presented.

  15. Investigation of industrial-scale carbon dioxide reduction using pulsed electron beams

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Petrov, G. M.; Apruzese, J. P.; Petrova, Tz. B.

    Carbon dioxide is the most important greenhouse gas contributing to global warming. To help mitigate increasing CO{sub 2} concentrations, we investigate a method of carbon dioxide reduction using high-power electron beams, which can be used on an industrial scale. A series of experiments are conducted in which the reduction of CO{sub 2} is measured for different gas compositions and power deposition rates. An electron beam deposition model is applied to compute reduction rates of CO{sub 2} and energy cost for breaking a CO{sub 2} molecule in flue gas and pure carbon dioxide at atmospheric pressure. For flue gas consisting ofmore » 82% N{sub 2}, 6% O{sub 2}, and 12% CO{sub 2}, the calculated energy cost is 85 eV per molecule. In order to dissociate 50% of the CO{sub 2} molecules, beam energy density deposition on the order of 20 J/cm{sup 3} is required. Electron beam irradiation of 12.6 liter gas volume containing 90% CO{sub 2} and 10% CH{sub 4} at beam energy density deposition of 4.2 J/cm{sup 3}, accumulated over 43 shots in a 20 min interval, reduced the CO{sub 2} concentration to 78%. Analogous experiments with a gas mixture containing 11.5% CO{sub 2}, 11.5% CH{sub 4}, and balance of Ar, reduced the CO{sub 2} concentration to below 11% with energy deposition 0.71 J/cm{sup 3}, accumulated over 10 shots in a 5 min interval. The experimental data and the theoretical predictions of CO{sub 2} reduction using pulsed electron beams are in agreement within the experimental error. Other techniques to enhance the removal of CO{sub 2} with pulsed electron beams are also explored, yielding new possible avenues of research.« less

  16. Growth of InN on Ge substrate by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Trybus, Elaissa; Namkoong, Gon; Henderson, Walter; Doolittle, W. Alan; Liu, Rong; Mei, Jin; Ponce, Fernando; Cheung, Maurice; Chen, Fei; Furis, Madalina; Cartwright, Alexander

    2005-06-01

    InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1) InN∥(1 1 1) Ge. Transmission electron microscopy shows an intermediate layer at the interface between the InN/Ge substrate. Consistent with recent reports implying a narrow bandgap of InN [Phys. Stat Sol. B 229 (2002) R1, Appl. Phys. Lett. 80 (2002) 3967], a strong photoluminescence with peak energy of 0.69 eV at 15 K was observed for this InN epilayer, in contrast to the peak energy of 0.71 eV for Ga-doped Ge under the same measurement conditions.

  17. Beam-induced pressure gradients in the early phase of proton-heated solar flares

    NASA Technical Reports Server (NTRS)

    Tamres, David H.; Canfield, Richard C.; Mcclymont, A. N.

    1986-01-01

    The pressure gradient induced in a coronal loop by proton beam momentum deposition is calculated and compared with the thermal pressure gradient arising from nonuniform deposition of beam energy; it is assumed that the transfer of momentum and energy from beam to target occurs via the Coulomb interaciton. Results are presented for both a low mean energy and a high mean energy proton beam injected at the loop apex and characterized by a power-law energy spectrum. The present treatment takes account of the breakdown of the cold target approximation for the low-energy proton beam in the corona, where the thermal speed of target electrons exceeds the beam speed. It is found that proton beam momentum deposition plays a potentially significant role in flare dynamics only in the low mean energy case and only in the corona, where it may dominate the acceleration of target material for as long as several tens of seconds. This conclusion suggest that the presence of low-energy nonthermal protons may be inferred from velocity-sensitive coronal observations in the early impulsive phase.

  18. Process for ion-assisted laser deposition of biaxially textured layer on substrate

    DOEpatents

    Russo, Richard E.; Reade, Ronald P.; Garrison, Stephen M.; Berdahl, Paul

    1995-01-01

    A process for depositing a biaxially aligned intermediate layer over a non-single crystal substrate is disclosed which permits the subsequent deposition thereon of a biaxially oriented superconducting film. The process comprises depositing on a substrate by laser ablation a material capable of being biaxially oriented and also capable of inhibiting the migration of substrate materials through the intermediate layer into such a superconducting film, while simultaneously bombarding the substrate with an ion beam. In a preferred embodiment, the deposition is carried out in the same chamber used to subsequently deposit a superconducting film over the intermediate layer. In a further aspect of the invention, the deposition of the superconducting layer over the biaxially oriented intermediate layer is also carried out by laser ablation with optional additional bombardment of the coated substrate with an ion beam during the deposition of the superconducting film.

  19. Ion beam sputter-deposited thin film coatings for protection of spacecraft polymers in low Earth orbit

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Mirtich, M. J.; Rutledge, S. K.; Swec, D. M.; Nahra, H. K.

    1985-01-01

    Ion beam sputter-deposited thin films of Al2O3, SiO2, and a codeposited mixture of predominantly SiO2 with small amounts of a fluoropolymer were evaluated both in laboratory plasma ashing tests and in space on board shuttle flight STS-8 for effectiveness in preventing oxidation of polyimide Kapton. Measurements of mass loss and optical performance of coated and uncoated polyimide samples exposed to the low Earth orbital environment are presented. Optical techniques were used to measure loss rates of protective films exposed to atomic oxygen. Results of the analysis of the space flight exposed samples indicate that thin film metal oxide coatings are very effective in protecting the polyimide. Metal oxide coatings with a small amount of fluoropolymer codeposited have the additional benefit of great flexibility.

  20. Ion beam sputter-deposited thin film coatings for protection of spacecraft polymers in low earth orbit

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Mirtich, M. J.; Rutledge, S. K.; Swec, D. M.; Nahra, H. K.

    1985-01-01

    Ion beam sputter-deposited thin films at Al2O3, SiO2, and a codeposited mixture of predominantly SiO2 with small amounts of fluoropolymer were evaluated both in laboratory plasma ashing tests and in space on board Shuttle flight STS-8 for effectiveness in preventing oxidation of polyimide Kapton. Measurements of mass loss and optical performance of coated and uncoated polyimide samples exposed to the low earth orbital environment are presented. Optical techniques were used to measure loss rates of protective films exposed to atomic oxygen. Results of the analysis of the space flight exposed samples indicate that thin film metal oxide coatings are very effective in protecting the polyimide. Metal oxide coatings with a small amount of fluoropolymer codeposited have the additional benefit of great flexibility.

  1. Integral window/photon beam position monitor and beam flux detectors for x-ray beams

    DOEpatents

    Shu, Deming; Kuzay, Tuncer M.

    1995-01-01

    A monitor/detector assembly in a synchrotron for either monitoring the position of a photon beam or detecting beam flux may additionally function as a vacuum barrier between the front end and downstream segment of the beamline in the synchrotron. A base flange of the monitor/detector assembly is formed of oxygen free copper with a central opening covered by a window foil that is fused thereon. The window foil is made of man-made materials, such as chemical vapor deposition diamond or cubic boron nitrate and in certain configurations includes a central opening through which the beams are transmitted. Sensors of low atomic number materials, such as aluminum or beryllium, are laid on the window foil. The configuration of the sensors on the window foil may be varied depending on the function to be performed. A contact plate of insulating material, such as aluminum oxide, is secured to the base flange and is thereby clamped against the sensor on the window foil. The sensor is coupled to external electronic signal processing devices via a gold or silver lead printed onto the contact plate and a copper post screw or alternatively via a copper screw and a copper spring that can be inserted through the contact plate and coupled to the sensors. In an alternate embodiment of the monitor/detector assembly, the sensors are sandwiched between the window foil of chemical vapor deposition diamond or cubic boron nitrate and a front foil made of similar material.

  2. Selective-area growth of GaN nanowires on SiO{sub 2}-masked Si (111) substrates by molecular beam epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kruse, J. E.; Doundoulakis, G.; Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, N. Plastira 100, 70013 Heraklion

    2016-06-14

    We analyze a method to selectively grow straight, vertical gallium nitride nanowires by plasma-assisted molecular beam epitaxy (MBE) at sites specified by a silicon oxide mask, which is thermally grown on silicon (111) substrates and patterned by electron-beam lithography and reactive-ion etching. The investigated method requires only one single molecular beam epitaxy MBE growth process, i.e., the SiO{sub 2} mask is formed on silicon instead of on a previously grown GaN or AlN buffer layer. We present a systematic and analytical study involving various mask patterns, characterization by scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy, as well asmore » numerical simulations, to evaluate how the dimensions (window diameter and spacing) of the mask affect the distribution of the nanowires, their morphology, and alignment, as well as their photonic properties. Capabilities and limitations for this method of selective-area growth of nanowires have been identified. A window diameter less than 50 nm and a window spacing larger than 500 nm can provide single nanowire nucleation in nearly all mask windows. The results are consistent with a Ga diffusion length on the silicon dioxide surface in the order of approximately 1 μm.« less

  3. Reaction Mechanism of Oxygen Atoms with Unsaturated Hydrocarbons by the Crossed-Molecular-Beams Method

    DOE R&D Accomplishments Database

    Buss, R. J.; Baseman, R. J.; Guozhong, H.; Lee, Y. T.

    1982-04-01

    From a series of studies of the reaction of oxygen atoms with unsaturated hydrocarbons using the crossed molecular beam method, the dominant reaction mechanisms were found to be the simple substitution reactions with oxygen atoms replacing H, Cl, Br atom or alkyl groups. Complication due to secondary reaction was avoided by carrying out experiments under single collisions and observing primary products directly. Primary products were identified by measuring the angular and velocity distributions of products at all the mass numbers which could be detected by the mass spectrometer, and from comparison of these distributions, applying the requirement of energy and momentum conservation.

  4. Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Ritzmann, Julian; Schott, Rüdiger; Gross, Katherine; Reuter, Dirk; Ludwig, Arne; Wieck, Andreas D.

    2018-01-01

    In this work, we first study the effect of different growth parameters on the molecular beam epitaxy (MBE) growth of GaAs layers on (1 1 1)A oriented substrates. After that we present a method for the MBE growth of atomically smooth layers by sequences of growth and annealing phases. The samples exhibit low surface roughness and good electrical properties shown by atomic force microscopy (AFM), scanning electron microscopy (SEM) and van-der-Pauw Hall measurements.

  5. Detection of Fatty Acids from Intact Microorganisms by Molecular Beam Static Secondary Ion Mass Spectrometry

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ingram, Jani Cheri; Lehman, Richard Michael; Bauer, William Francis

    We report the use of a surface analysis approach, static secondary ion mass spectrometry (SIMS) equipped with a molecular (ReO4-) ion primary beam, to analyze the surface of intact microbial cells. SIMS spectra of 28 microorganisms were compared to fatty acid profiles determined by gas chromatographic analysis of transesterfied fatty acids extracted from the same organisms. The results indicate that surface bombardment using the molecular primary beam cleaved the ester linkage characteristic of bacteria at the glycerophosphate backbone of the phospholipid components of the cell membrane. This cleavage enables direct detection of the fatty acid conjugate base of intact microorganismsmore » by static SIMS. The limit of detection for this approach is approximately 107 bacterial cells/cm2. Multivariate statistical methods were applied in a graded approach to the SIMS microbial data. The results showed that the full data set could initially be statistically grouped based upon major differences in biochemical composition of the cell wall. The gram-positive bacteria were further statistically analyzed, followed by final analysis of a specific bacterial genus that was successfully grouped by species. Additionally, the use of SIMS to detect microbes on mineral surfaces is demonstrated by an analysis of Shewanella oneidensis on crushed hematite. The results of this study provide evidence for the potential of static SIMS to rapidly detect bacterial species based on ion fragments originating from cell membrane lipids directly from sample surfaces.« less

  6. Uniform deposition of size-selected clusters using Lissajous scanning

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Beniya, Atsushi; Watanabe, Yoshihide, E-mail: e0827@mosk.tytlabs.co.jp; Hirata, Hirohito

    2016-05-15

    Size-selected clusters can be deposited on the surface using size-selected cluster ion beams. However, because of the cross-sectional intensity distribution of the ion beam, it is difficult to define the coverage of the deposited clusters. The aggregation probability of the cluster depends on coverage, whereas cluster size on the surface depends on the position, despite the size-selected clusters are deposited. It is crucial, therefore, to deposit clusters uniformly on the surface. In this study, size-selected clusters were deposited uniformly on surfaces by scanning the cluster ions in the form of Lissajous pattern. Two sets of deflector electrodes set in orthogonalmore » directions were placed in front of the sample surface. Triangular waves were applied to the electrodes with an irrational frequency ratio to ensure that the ion trajectory filled the sample surface. The advantages of this method are simplicity and low cost of setup compared with raster scanning method. The authors further investigated CO adsorption on size-selected Pt{sub n} (n = 7, 15, 20) clusters uniformly deposited on the Al{sub 2}O{sub 3}/NiAl(110) surface and demonstrated the importance of uniform deposition.« less

  7. Gallium Nitride (GaN) High Power Electronics (FY11)

    DTIC Science & Technology

    2012-01-01

    GaN films grown by metal-organic chemical vapor deposition (MOCVD) and ~1010 in films grown by molecular beam epitaxy (MBE) when they are deposited...inductively coupled plasma I-V current-voltage L-HVPE low doped HVPE MBE molecular beam epitaxy MOCVD metal-organic chemical vapor deposition...figure of merit HEMT high electron mobility transistor H-HVPE high doped HVPE HPE high power electronics HVPE hydride vapor phase epitaxy ICP

  8. Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy

    NASA Astrophysics Data System (ADS)

    Asoka-Kumar, P.; Gossmann, H.-J.; Unterwald, F. C.; Feldman, L. C.; Leung, T. C.; Au, H. L.; Talyanski, V.; Nielsen, B.; Lynn, K. G.

    1993-08-01

    Positron annihilation in Si is a quantitaive, depth-sensitive technique for the detection of vacancylike defects or voids. A sensitivity of 5×1015 cm-3 for voidlike defects is easily achieved. The technique has been applied to a study of point-defect distributions in thin films of Si grown by molecular-beam epitaxy. A special procedure was developed to remove the influence of the native oxide on the positron measurement. 200-nm-thick films grown at temperatures between 475 and 560 °C show no defects below the sensitivity limit and are indistinguishable from the bulk substrate. So are films grown at 220 °C, provided a 2-min high-temperature anneal to a peak temperature of >=500 °C is executed every ~=30 nm during growth. If TRTA=450 °C, part of the film contains vacancylike defects to a concentration of ~=1018 cm-3. These results correlate well with current-voltage characteristics of p-n junctions grown with different rapid thermal anneal (RTA) temperatures. Ion scattering, with a defect sensitivity of ~=1%, shows no difference between films grown with different TRTA. Recrystallization of amorphous films, deposited at room temperature and annealed in situ at 550 °C, always leaves a significant defect concentration of ~=2×1018 cm-3; those defects are reduced but still present even after a 2-h 800 °C furnace anneal.

  9. Rapid analysis of the chemical composition of agricultural fibers using near infrared spectroscopy and pyrolysis molecular beam mass spectrometry

    Treesearch

    Stephen S. Kelley; Roger M. Rowell; Mark Davis; Cheryl K. Jurich; Rebecca Ibach

    2004-01-01

    The chemical composition of a variety of agricultural biomass samples was analyzed with near infrared spectroscopy and pyrolysis molecular beam mass spectroscopy. These samples were selected from a wide array of agricultural residue samples and included residues that had been subjected to a variety of di2erent treatments including solvent extractions and chemical...

  10. The characteristics of a new negative metal ion beam source and its applications

    NASA Astrophysics Data System (ADS)

    Paik, Namwoong

    2001-10-01

    Numerous efforts at energetic thin film deposition processes using ion beams have been made to meet the demands of today's thin film industry. As one of these efforts, a new Magnetron Sputter Negative Ion Source (MSNIS) was developed. In this study, the development and the characterization of the MSNIS were investigated. Amorphous carbon films were used as a sample coating medium to evaluate the ion beam energy effect. A review of energetic Physical Vapor Deposition (PVD) techniques is presented in Chapter 1. The energetic PVD methods can be classified into two major categories: the indirect ion beam method Ion Beam Assisted Deposition (IBAD), and the direct ion beam method-Direct Ion Beam Deposition (DIBD). In this chapter, currently available DIBD processes such as Cathodic Arc, Laser Ablation, Ionized Physical Vapor Deposition (I-PVD) and Magnetron Sputter Negative Ion Source (MSNIS) are individually reviewed. The design and construction of the MSNIS is presented in chapter 2. The MSNIS is a hybrid of the conventional magnetron sputter configuration and the cesium surface ionizer. The negative sputtered ions are produced directly from the sputter target by surface ionization. In chapter 3, the ion beam and plasma characteristics of an 8″ diameter MSNIS are investigated using a retarding field analyzer and a cylindrical Langmuir Probe. The measured electron temperature is approximately 2-5 eV, while the plasma density and plasma potential were of the order of 10 11-1012 cm3 and 5-20 V, respectively, depending on the pressure and power. In chapter 4, in order to evaluate the effect of the ion beam on the resultant films, amorphous carbon films were deposited under various conditions. The structure of carbon films was investigated using Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). The result suggests the fraction of spa bonding is more than 70% in some samples prepared by MSNIS while magnetron sputtered samples showed less than 30%. (Abstract

  11. The supersonic molecular beam injector as a reliable tool for plasma fueling and physics experiment on HL-2A.

    PubMed

    Chen, C Y; Yu, D L; Feng, B B; Yao, L H; Song, X M; Zang, L G; Gao, X Y; Yang, Q W; Duan, X R

    2016-09-01

    On HL-2A tokamak, supersonic molecular beam injection (SMBI) has been developed as a routine refueling method. The key components of the system are an electromagnetic valve and a conic nozzle. The valve and conic nozzle are assembled to compose the simplified Laval nozzle for generating the pulsed beam. The appurtenance of the system includes the cooling system serving the cooled SMBI generation and the in situ calibration component for quantitative injection. Compared with the conventional gas puffing, the SMBI features prompt response and larger fueling flux. These merits devote the SMBI a good fueling method, an excellent plasma density feedback control tool, and an edge localized mode mitigation resource.

  12. Short wavelength (visible) GaAs quantum well lasers grown by molecular beam epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Woodbridge, K.; Blood, P.; Fletcher, E.D.

    1984-07-01

    GaAs-AlGaAs multiple quantum well (MQW) injection lasers with well widths from 55 to 13 A have been grown by molecular beam epitaxy and operated at room temperature, showing emission at wavelengths down to 704 nm, the shortest reported for a MQW injection laser with GaAs wells. In a device with 25-A wells some evidence of coupling was apparent when barrier widths were reduced to 40 A. For devices with 80-A barriers there is a difference of about 20 nm between the calculated n = 1 (e--hh) transition wavelength and the lasing wavelength, whereas the calculation agrees with photovoltage absorption measurementsmore » on the same structures.« less

  13. Process for ion-assisted laser deposition of biaxially textured layer on substrate

    DOEpatents

    Russo, R.E.; Reade, R.P.; Garrison, S.M.; Berdahl, P.

    1995-07-11

    A process for depositing a biaxially aligned intermediate layer over a non-single crystal substrate is disclosed which permits the subsequent deposition thereon of a biaxially oriented superconducting film. The process comprises depositing on a substrate by laser ablation a material capable of being biaxially oriented and also capable of inhibiting the migration of substrate materials through the intermediate layer into such a superconducting film, while simultaneously bombarding the substrate with an ion beam. In a preferred embodiment, the deposition is carried out in the same chamber used to subsequently deposit a superconducting film over the intermediate layer. In a further aspect of the invention, the deposition of the superconducting layer over the biaxially oriented intermediate layer is also carried out by laser ablation with optional additional bombardment of the coated substrate with an ion beam during the deposition of the superconducting film. 8 figs.

  14. Ionization and dissociation of molecular ion beams by intense ultrafast laser pulses

    NASA Astrophysics Data System (ADS)

    Ben-Itzhak, Itzik

    2007-06-01

    Laser-induced dissociation and ionization of a diatomic molecular-ion beam were simultaneously measured using coincidence 3D momentum imaging, with direct separation of the two processes even where the fragment kinetic energy is the same for both processes. We mainly focus on the fundamental H2^+ molecule in 7-135 fs laser pulses having 10^13-10^15 W/cm^2 peak intensity. At high intensities the kinetic energy release (KER) distribution following ionization of H2^+ was measured to be broad and structureless. Its centroid shifts toward higher energies as the laser intensity is increased indicating that ionization shifts to smaller internuclear distances. In contrast, a surprising structure is observed near the ionization threshold, which we call above threshold Coulomb explosion (ATCE) [1]. The angular distributions of the two H^+ fragments are strongly peaked along the laser polarization, and the angular distribution is described well by [cos^2θ]^n, where n is the number of photons predicted by our ATCE model [1]. Our data indicates that n varies with the laser wavelength as predicted by the model. The KER and angular distributions of H2^+ dissociation change dramatically with decreasing pulse width over the 7-135 fs range in contrast to the reported trend for longer pulses. Others contributing to this work: A.M. Sayler, P.Q. Wang, J. McKenna, B. Gaire, Nora G. Johnson, E. Parke, K.D. Carnes, and B.D. Esry. Thank are due to Professor Zenghu Chang for providing the intense laser beams and Dr. Charles Fehrenbach for his help with the ion beams. [1] B.D. Esry, A.M. Sayler, P.Q. Wang, K.D. Carnes, and I. Ben-Itzhak, Phys. Rev. Lett. 97, 013003 (2006).

  15. High-resolution molecular-beam spectroscopy of NaCN and Na 13CN

    NASA Astrophysics Data System (ADS)

    van Vaals, J. J.; Meerts, W. Leo; Dymanus, A.

    The sodium cyanide molecule was studied by molecular-beam electric-resonance spectroscopy in the microwave region. We used the seeded-beam technique to produce a supersonic beam with strong translational, rotational and vibrational cooling. In the frequency range 9.5-40 GHz we observed and identified for NaCN 186 and for Na 13CN 107 hyperfine transitions in 20 and 16 rotational transitions, respectively, all in the ground vibrational state. The rotational, the five quartic and three sextic centrifugal distortion constants of NaCN are: A″ = 57921.954(7) MHz; B″ = 8369.312(2) MHz, C″ = 7272.712(2) MHz. All quadrupole and several spin-rotation coupling constants for the hyperfine interaction were evaluated. The quadrupole coupling constants (in MHz) for NaCN are: eQq12(Na) = -5.344(5), eQq12 = 2.397(7). eQq12(N) = 2.148(4), eQq12(N) = -4.142(5). From these constants and those of Na 13CN we have determined the principal components of the quadrupole coupling tensor for potassium and nitrogen. The structure of sodium cyanide evaluated from the rotational constants of NaCN and Na 13CN was found to be T shaped, similar to the structure of KCN but completely different from the linear isocyanide configuration of LiNC. The effective structural parameters for sodium cyanide in the ground vibrational state are: rCN = 1.170(4) Å, rNaC = 2.379(15) Å, rN12N = 2.233(15) Å, in gratifying agreement with ab initio calculations. Both the geometrical structure and the hyperfine coupling justify the conclusion that the CN group in gaseous sodium cyanide approximately can be considered as a free CN - ion.

  16. Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

    NASA Astrophysics Data System (ADS)

    Malinverni, M.; Lamy, J.-M.; Martin, D.; Feltin, E.; Dorsaz, J.; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C.; Grandjean, N.

    2014-12-01

    We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10-4 Ω cm2, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH3-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm2 ridge dimension and a threshold current density of ˜5 kA cm-2 in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al0.06Ga0.94N:Mg despite the low growth temperature.

  17. Strong-field Photoionization of Sputtered Neutral Molecules for Molecular Depth Profiling

    PubMed Central

    Willingham, D; Brenes, D. A.; Wucher, A

    2009-01-01

    Molecular depth profiles of an organic thin film of guanine vapor deposited onto a Ag substrate are obtained using a 40 keV C60 cluster ion beam in conjunction with time-of-flight secondary ion mass spectrometric (ToF-SIMS) detection. Strong-field, femtosecond photoionization of intact guanine molecules is used to probe the neutral component of the profile for direct comparison with the secondary ion component. The ability to simultaneously acquire secondary ions and photoionized neutral molecules reveals new fundamental information about the factors that influence the properties of the depth profile. Results show that there is an increased ionization probability for protonated molecular ions within the first 10 nm due to the generation of free protons within the sample. Moreover, there is a 50% increase in fragment ion signal relative to steady state values 25 nm before reaching the guanine/Ag interface as a result of interfacial chemical damage accumulation. An altered layer thickness of 20 nm is observed as a consequence of ion beam induced chemical mixing. In general, we show that the neutral component of a molecular depth profile using the strong-field photoionization technique can be used to elucidate the effects of variations in ionization probability on the yield of molecular ions as well as to aid in obtaining accurate information about depth dependent chemical composition that cannot be extracted from TOF-SIMS data alone. PMID:20495665

  18. High-mobility BaSnO 3 grown by oxide molecular beam epitaxy

    DOE PAGES

    Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; ...

    2016-01-28

    High-mobility perovskite BaSnO 3 films are of significant interest as newwide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO 3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO x. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO 3. We demonstrate room temperature electron mobilities of 150 cm 2 V -1 s -1 in films grownmore » on PrScO 3. Lastly, the results open up a wide range of opportunities for future electronic devices.« less

  19. Thin film phase diagram of iron nitrides grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Gölden, D.; Hildebrandt, E.; Alff, L.

    2017-01-01

    A low-temperature thin film phase diagram of the iron nitride system is established for the case of thin films grown by molecular beam epitaxy and nitrided by a nitrogen radical source. A fine-tuning of the nitridation conditions allows for growth of α ‧ -Fe8Nx with increasing c / a -ratio and magnetic anisotropy with increasing x until almost phase pure α ‧ -Fe8N1 thin films are obtained. A further increase of nitrogen content below the phase decomposition temperature of α ‧ -Fe8N (180 °C) leads to a mixture of several phases that is also affected by the choice of substrate material and symmetry. At higher temperatures (350 °C), phase pure γ ‧ -Fe4N is the most stable phase.

  20. Molecular beam epitaxy of three-dimensional Dirac material Sr3PbO

    NASA Astrophysics Data System (ADS)

    Samal, D.; Nakamura, H.; Takagi, H.

    2016-07-01

    A series of anti-perovskites including Sr3PbO are recently predicted to be a three-dimensional Dirac material with a small mass gap, which may be a topological crystalline insulator. Here, we report the epitaxial growth of Sr3PbO thin films on LaAlO3 using molecular beam epitaxy. X-ray diffraction indicates (001) growth of Sr3PbO, where [110] of Sr3PbO matches [100] of LaAlO3. Measurements of the Sr3PbO films with parylene/Al capping layers reveal a metallic conduction with p-type carrier density of ˜1020 cm-3. The successful growth of high quality Sr3PbO film is an important step for the exploration of its unique topological properties.